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K band MMICIQ Mixer

K-IQM-1721 Previously named LE-Ka1340301
GaAs Diode IQ MMIC Mixer 17-21 GHzOverviewFeatures

K-IQM-1721 is an I/Q MMIC diode mixer with integrated quadrature coupler for single•

17 - 21 GHz RF.

sideband (LO-IF/LO-RF) operation in either upconverter or downconverter modes.

•2 - 7 GHz IF.

This MMIC is fabricated using GaAs Schottky diode technology and is designed for•

10 dB conversion loss.

output frequencies in the range from 17 GHz to 21GHz using fixed LO (24 GHz) and•13 dBm LO drive.

varying IF (2GHz–7GHz) or vice versa. The circuit typically supplies flat conversion•30 dB IF/ LO isolation.

loss at moderate levels of LO power.
The underside of the die is gold plated. The MMIC is compatible with precision die
attach methods, as well as thermo-compression and thermosonic wire bonding,Applications

making it ideal for MCM and hybrid microcircuit applications. All data shown herein is•High speed data communications.

measured with the chip in a 50 Ohm environment and contacted with RF probes, with•Space communications.

results calibrated to the probe tips.

•IOT.

•Security.

K band Datasheet

K-IQM-1721

Issue date: 30 April 21

DOC REV 3

Page 1 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 17-21GHz

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product datasheet

Specification Overview(based on tests where IF = 4 GHz, LO = +13 dBm)

Parameter

Min.

Frequency

17		LO Frequency

Typ.

Max.

Units21GHz24		GHzLO Power

101316dBm

IF Frequency

247GHzConversion Loss		

1013dB

LO-IF Isolation		30		dBNotes
All tests are carried out at 25°C.

Absolute Maximum Ratings

Parameter			Rating
LO Power			

25 dBmIF / RF Power			

22 dBmStorage Temperature			−65°C to +175°C

Channel Temperature			+175°C

Operating Temperature			−40°C to +85°C

K band Datasheet

K-IQM-1721

Issue date: 30 April 21ESD (electrostatic discharge)
sensitive device. Charged devices
and circuit boards can discharge
without detection. Although thisproduct features proprietary
protection circuitry, damage may
occur on devices subjected to ESD.
Proper ESD precautions should
be taken to avoid performancedegradation or loss of functionality.

DOC REV 3

Page 2 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 17-21GHz

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product datasheet

Measured Performance Data
(LO=24GHz; RF=16–22GHz, -10dBm; IF=(LO-RF), (Downconverter Mode))0

Figure 1
Conversion Loss v IF Frequency-513dBm LO Power I
13dBm LO Power Q

Conversion Loss (dB)

-10-15-20-25-30

16171819202122

RF Frequency (GHz)(LO=24GHz; RF=16-22GHz, -10dBm; IF=(LO-RF), (Downconverter Mode))
35

Figure 2
LO-IF Isolation

3413dBm LO Power I

3313dBm LO Power QLO-IF Isolation (dB)

323130292827262516171819202122

RF Frequency (GHz)K band Datasheet

K-IQM-1721

Issue date: 30 April 21

DOC REV 3Page 3 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 17-21GHz

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product datasheet

Measured Performance Data
(LO=24GHz; RF=26–32GHz, 0dBm; IF=(RF-LO), (Downconverter Mode))0

Figure 3
Conversion Loss (Image Band)

13dBm LO Power I
13dBm LO Power Q-10Conversion Loss (dB)

-20

-30

-40-50-60

262728

2930

31

32

RF Frequency (GHz)(LO=24GHz, 13dBm; RF=19GHz; IF=(LO-RF), (Downconverter Mode))2

Figure 4
Pin v PoutIF Output Power (dBm)

0-2-4I

Q-6-8-10-120.00

2.00

4.00

6.00

8.00

10.00

12.00

14.00

16.00

18.00

20.00

RF Input Power (dBm)

K band Datasheet

K-IQM-1721

Issue date: 30 April 21

DOC REV 3

Page 4 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 17-21GHz

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product datasheet

495

Outline Drawing

82868266395

10511705454821052700

8286

10582

5486

6982

65
54105

66.5
49582
86
82

3450
Notes

Die Packing Information

1.

All dimensions are in um.

All die are delivered using gel-paks

2.

RF bond pads are 105 x 86um.

unless otherwise requested.

3.

Gold backside metalisation.

4.

Backside metal is ground.

5.

Die thickness is 100um

K band Datasheet

K-IQM-1721

Issue date: 30 April 21

DOC REV 3

Page 5 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 17-21GHz

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product datasheet

Pad Descriptions

Name

DescriptionLO		

LO pad. This pad is AC coupled.

RF		RF pad. This pad is AC coupled.

I		

I pad. This pad is AC coupled.

Q		Q pad. This pad is AC coupled.

BOTTOM

The die backside must be connected to RF/DC ground.

Connection Configurations

Keep as short
as possible

Low Loss
SubstrateI

RF50Ω LineRFConnection
Configuration

LOQ

K band Datasheet

K-IQM-1721

Issue date: 30 April 21

DOC REV 3

Page 6 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 17-21GHz

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product datasheetGeneral Notes on Assembly

Die should be mounted on conductive material such as gold-plated metal to provide agood ground and suitable heat sink, if necessary.
1.

Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/
Sn occurs at approximately 280oC so the die (plus mount and preform) is initiallyheated up to 180oC and then it is heated for approximately 10 seconds to 280oC
using a nitrogen heat gun. The device will survive 10 seconds at this temperature.
The static breakdown for GaAs devices is approximately 330oC.

2.

Pure, dry nitrogen should be used as the heat source.

3.

If the devices cannot be lifted/ placed by a vacuum device, then ESD die-lifting
tweezers are preferable.

4.

Aluminium wire must not be used.

Disclaimer
The information contained herein is believed to be reliable; however, Arralis makes no warranties
regarding the information and assumes no responsibility or liability whatsoever for the use of theinformation contained herein. All information is subject to change without notice, therefore customers
should obtain the latest relevant information before placing orders for Arralis products. The information
contained herein does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any
other intellectual property rights.
This information does not constitute a warranty with respect to the product described, and Arralis
disclaims any and all warranties either expressed or implied, relating to sale and/or use of Arralis products
including liability or warranties relating to fitness for a particular purpose, consequential or incidental
damages, merchantability, or infringement of any patent, copyright or other intellectual property right.
Without limiting the generality of the foregoing, Arralis products are not warranted or authorised for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications wherea failure would reasonably be expected to cause severe personal injury or death.
Copyright 2021 © Arralis

K band Datasheet

K-IQM-1721

Issue date: 30 April 21

DOC REV 3

Page 7 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

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Arralis USA OfficeArralis European Offices+(1) 386 301 3249 (USA)t: +(44) 1793 239670 (UK)e: sales@arralis.com

K band Datasheetarralis.com
K-IQM-1721

e: emilie.wren@arralis.com

Issue date: 30 April 21

DOC REV 3

Page 8 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.