PMBT3906M
40 V, 200 mA PNP switching transistor
Rev. 01 — 22 July 2009

Product data sheet

BOTTOM VIEW

1. Product profile
1.1 General description
PNP single switching transistor in a SOT883 (SC-101) leadless ultra small
Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBT3904M.

1.2 Features
nnnn

Single general-purpose switching transistor
Board-space reduction
AEC-Q101 qualified
Ultra small SMD plastic package

1.3 Applications
n General-purpose switching and amplification

1.4 Quick reference data
Table 1.

Quick reference data

SymbolParameterConditions

MinTypMax

Unit

VCEO

collector-emitter voltage

open base--−40VIC

collector current--−200mAhFE

DC current gain

VCE = −1 V;
IC = −10 mA

100

1803002. Pinning information
Table 2.

Pinning

Pin

Description

Simplified outline

1base

2

emitter13collector

2Graphic symbol
3

3
1
Transparent
top view

2
sym013

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

3. Ordering information
Table 3.

Ordering information

Type number
PMBT3906M

Package
Name

Description

VersionSC-101

leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm

SOT8834. Marking
Table 4.

Marking codes

Type number

Marking code

PMBT3906M

6Q

5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMaxUnit

VCBO

collector-base voltage

open emitter

-−40

V

VCEO

collector-emitter voltage

open base

-−40

V

VEBO

emitter-base voltage

open collector

-−6V

IC

collector current-−200mA

ICM

peak collector current

single pulse;
tp ≤ 1 ms-−200mA

IBM

peak base currentsingle pulse;
tp ≤ 1 ms-−100mA

Ptot

total power dissipation

Tamb ≤ 25 °C[1][2]-260mW[1][3]-590mW

Tj

junction temperature-150°C

Tambambient temperature−55+150°C

Tstg

storage temperature−65+150°C[1]

Reflow soldering is the only recommended soldering method.

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 2009

2 of 11PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

006aab602

800Ptot(mW)(1)

600400(2)2000−75−252575

125175
Tamb (°C)(1) FR4 PCB, mounting pad for collector 1 cm2(2) FR4 PCB, standard footprint

Fig 1.

Power derating curves SOT883 (SC-101)

6. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameterRth(j-a)

Conditions

thermal resistance fromjunction to ambientin free airTypMaxUnit--

481

K/W

[1][3]

--

212

K/W

[1]

Reflow soldering is the only recommended soldering method.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

PMBT3906M_1

Product data sheetMin[1][2]© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 2009

3 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

006aab603

103
duty cycle =1Zth(j-a)
(K/W)

0.75
0.5
0.33

102

0.2
0.1
0.05
0.02

100.01
01
10−5

10−4

10−3

10−210−1

110210103
tp (s)

FR4 PCB, standard footprintFig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
SymbolParameter

MinTypMax

Unit

ICBO

collector-base cut-off VCB = −30 V; IE = 0 A
current

Conditions--−50nAIEBO

emitter-base cut-offcurrent

VEB = −6 V; IC = 0 A--−50nAhFE

DC current gain

VCE = −1 V
IC = −0.1 mA

60180-IC = −1 mA

80180-IC = −10 mA

100180300

IC = −50 mA

60130-IC = −100 mA

3050-

IC = −10 mA; IB = −1 mA-−100−250mV

IC = −50 mA; IB = −5 mA-−165−400mV

IC = −10 mA; IB = −1 mA-−750−850mV

IC = −50 mA; IB = −5 mA-−850−950mVVCC = −3 V;
IC = −10 mA;
IBon = −1 mA;
IBoff = 1 mA--35nsVCEsat

collector-emittersaturation voltage

VBEsatbase-emittersaturation voltage

td

delay time

trrise timeton

turn-on time-

-

35

ns-

-

70

ns

ts

storage time

--

225

ns

tf

fall time

-

-

75

ns

toff

turn-off time

--

300

ns

Cc

collector capacitance VCB = −5 V; IE = ie = 0 A;
f = 1 MHz

-

-

4.5

pF

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 2009

4 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
SymbolParameterConditions

MinTypMax

UnitCeemitter capacitance

VEB = −500 mV;
IC = ic = 0 A; f = 1 MHz--10pF

fT

transition frequency

VCE = −20 V;
IC = −10 mA;
f = 100 MHz

250--MHzNF

noise figure

VCE = −5 V;
IC = −100 µA; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz--4dB

006aab120

400hFE006aab121−0.3(1)

IB (mA) = −5.0
−4.5
−4.0
−3.5−3.0IC
(A)

300

−2.5−2.0−0.2−1.5200−1.0(2)−0.1−0.5(3)1000−10−1−1−10−1020−1030−2IC (mA)

VCE = −1 V−4−6−8−10VCE (V)Tamb = 25 °C(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig 3.

DC current gain as a function of collectorcurrent; typical values

Fig 4.

Collector current as a function ofcollector-emitter voltage; typical values

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 2009

5 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

006aab123−1.2006aab124−1.2VBE(V)

VBEsat(V)−1.0−1.0(1)(1)−0.8(2)−0.6−0.8(2)−0.6(3)

(3)

−0.4

−0.4

−0.2
−10−1−1−10−102−0.2−10−1−103−1−10IC (mA)

−103
IC (mA)

VCE = −1 V

IC/IB = 10

(1) Tamb = −55 °C(1) Tamb = −55 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = 150 °C(3) Tamb = 150 °C

Fig 5.

−102

Base-emitter voltage as a function of collector
current; typical values

Fig 6.

Base-emitter saturation voltage as a functionof collector current; typical values
006aab122−1VCEsat(V)(1)−10−1(2)(3)−10−2−10−1−1−10−102−103
IC (mA)

IC/IB = 10(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig 7.

Collector-emitter saturation voltage as a function of collector current; typical values

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 2009

6 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

8. Test informationVBBRBoscilloscope

VCCRCVo(probe)(probe)

450 Ω450 Ωoscilloscope

R2VI

DUT
R1mgd624

VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = −3 V
Oscilloscope: input impedance Zi = 50 Ω

Fig 8.

Test circuit for switching times

8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

9. Package outline
0.62
0.55
0.55
0.47

0.50
0.46

30.30
0.22

0.65
0.30
0.22

2

1.02
0.95

10.20
0.12
0.35
Dimensions in mmFig 9.

Package outline SOT883 (SC-101)

PMBT3906M_1

Product data sheet

03-04-03© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 2009

7 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number

Package Description

Packing quantity
10000

PMBT3906M[1]

SOT8832 mm pitch, 8 mm tape and reel-315

For further information and the availability of packing methods, see Section 14.

11. Soldering
1.3
0.7

R0.05 (12×)

solder lands
solder resist
0.9

0.6

0.7
solder paste

0.25
(2×)

occupied area
0.3
(2×)

0.3

0.4
(2×)

0.4

Dimensions in mm

sot883_fr

Fig 10. Reflow soldering footprint SOT883 (SC-101)

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 20098 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

12. Revision history
Table 9.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PMBT3906M_1

20090722

Product data sheet--

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 20099 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

13. Legal information
13.1 Data sheet status
Document status[1][2]Product status[3]Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

Preliminary [short] data sheet

Qualification

This document contains data from the preliminary specification.

Product [short] data sheet

Production

This document contains the product specification.

[1]

Please consult the most recently issued document before initiating or completing a design.

[2]

The term ‘short data sheet’ is explained in section “Definitions”.

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences ofuse of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

13.3 Disclaimers
General — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations orwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.
Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from national authorities.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PMBT3906M_1

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 01 — 22 July 200910 of 11

PMBT3906M

NXP Semiconductors

40 V, 200 mA PNP switching transistor

15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5678
8.1
910
11
1213
13.1
13.213.3
13.4
1415

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9Legal information. . . . . . . . . . . . . . . . . . . . . . . 10Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 July 2009
Document identifier: PMBT3906M_1