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TRXˍ120ˍ067
120-GHz Highly Integrated IQ Transceiver with Antennas in Package
in Silicon Germanium Technology

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120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

TRXˍ120ˍ067
120-GHz Highly Integrated IQ Transceiver with Antennas in Package
in Silicon Germanium Technology

Data Sheet
Status:Date:

Author:Filename:

Final

25-July-2023

Indie Semiconductor FFO GmbH

DatasheetˍTRXˍ120ˍ067_V1.1

Version:

Product number:

Package:

Marking:

Page:

1.1

TRXˍ120ˍ067

QFN56, 8 × 8 mm²

TRX067YYWW

1 ofDocument:

Annex to VAˍU03ˍ01

Anlage 8ˍTemplateˍDatenblattˍRev F

Date: 12-Dec-2023-1-

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

Version Control
Version
0.1
0.2
0.3
0.4

Changed section
Template, contents
8 Measurement Results
6.3 Evaluation Kit
4.4 Electrical Characteristics

Description of change
Initial release
Scale in figures 20 and 21 corrected
Information regarding to SR’s new SiRad Easy® r4 platform
Notation of ‘IQ amplitude imbalance’ (Aimb) notation corrected.

0.5

7 Reliability and Environmental Test
5.1 Outline Dimensions

Status of all tests listed in Table 7 updated.
Figure 4, Position of Antenna Arrays… :Mold cap dimension corrected, and cross section added.

8 Measurement Results

Figure 8, Current Consumption vs. Temperature,and figure 16, TX Output Frequency vs. Temperature:
shown temperature range extended.

4.4 Electrical Characteristics

Start and Stop Frequency limits changed to include latest test
statistics. EIRP value added.

7 Reliability and Environmental Test

All tests listed in Table 7 completed and passed.

4.4 Electrical Characteristics
All sections

Update with data from serial test.
Minor corrections to remove typos.

1.0

1.1

-2-

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

Table of Contents

1

Features ................................................................................................................................ 4

1.1
1.2

Overview .................................................................................................................................................. 4
Applications.............................................................................................................................................. 42
3

Block Diagram ....................................................................................................................... 5
Pin Configuration .................................................................................................................. 6

3.1
3.2

Pin Assignment ......................................................................................................................................... 6
Pin Description ......................................................................................................................................... 6

4

Specification.......................................................................................................................... 7

4.1
4.2
4.3
4.4

Absolute Maximum Ratings ..................................................................................................................... 7
Operating Range ...................................................................................................................................... 7
Thermal Resistance .................................................................................................................................. 7
Electrical Characteristics .......................................................................................................................... 8

5

Packaging .............................................................................................................................. 9

5.1
5.2
5.3

Outline Dimensions .................................................................................................................................. 9
Package Code ........................................................................................................................................... 9
Antenna Position ...................................................................................................................................... 96

Application.......................................................................................................................... 10

6.1
6.2
6.3
6.4
6.5

Application Circuit Schematic ................................................................................................................ 10Power Cycling ......................................................................................................................................... 10
Evaluation Kit ......................................................................................................................................... 10
Input / Output Stages............................................................................................................................. 11
VCO Tuning Inputs.................................................................................................................................. 11

7
8

Reliability and Environmental Test ...................................................................................... 12
Measurement Results.......................................................................................................... 13-3-

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

1

Features














1.1

Radar front end (RFE) with antennas in package for 122-GHz ISM bandSingle supply voltage of 3.3 V
Fully ESD protected device
Low power consumption of 380 mW
in continuous operating mode
Duty cycling is possible
Integrated low phase noise push-push VCO
Receiver with homodyne quadrature mixer
RX and TX patch antennas
Wide bandwidth of up to 6 GHz
QFN56 leadless plastic package 8 × 8 mm²
Package partly molded, MSL3 rated
Pb-free, RoHS compliant package
Replaces the TRXˍ120ˍ001

Overview

The RFE is an integrated transceiver circuit for the 122-GHz ISM band with antennas in package. It includes a power
amplifier (PA), low-noise amplifier (LNA), quadrature mixers, a poly-phase filter, a voltage-controlled oscillator,
divide-by-32 outputs and transmit and receive antennas (see Figure 1). The RF signal from the oscillator is directed
to both, the TX path via PA, and to the RX path via buffer circuits. The RX signal is amplified by the LNA and converted
to baseband by two mixers with quadrature LO signal. The 120-GHz VCO has four analog tuning inputs with different
tuning ranges and tuning slopes. The tuning inputs can be combined to obtain a wide frequency tuning range. The
analog tuning inputs together with integrated frequency divider and external fractional-N PLL can be used for
frequency modulated continuous wave (FMCW) radar operation. With fixed oscillator frequency it can be used incontinuous wave (CW) mode. Other modulation schemes are possible as well by utilizing analog tuning inputs.
The IC is fabricated in a SiGe BiCMOS technology.

1.2

Applications

The main field of application for the 120-GHz transceiver radar frontend is in short range radar systems with a range
up to about 10 meters. By using dielectric lenses or reflectors, the range can be increased considerably. The RFE
can be used in FMCW mode as well as in CW mode. Although the chip is intended for use in the ISM band
122 GHz - 123 GHz, it is also possible to extend the bandwidth to the full tuning range of 6 GHz.

-4-

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

2

Figure 1

Block Diagram

Block Diagram-5-

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

3

Pin Configuration

3.1

Pin Assignment

Figure 2

3.2

Pin Assignment (QFN56, top view)

Pin Description

Table 1
Pin
No.
1-6
7
8
9, 10
11 - 14
15

Pin Description
Description
Name
NC
Not connected
divp
Divider output with terminals for differential signal, matched to 50 Ω load, DC coupled, external
decoupling
capacitor required.
divn
X
Reserved. Do not make any connections.
GND
Connect to ground.
X
Reserved. Do not make any connections.
Divider enable input: 1.2 V – enable, 0 – off. NMOS input, external pull-up resistor of 100 kΩ
16
diven
recommended.
Transmitter power control input: 1.2 V – full, 0 – -3 dB. NMOS input, external pull-up resistor of17
pwrˍtx
100 kΩ recommended.
18
Vt3
VCO tuning input 3 (0 – VCC)
19
Vt2
VCO tuning input 2 (0 – VCC)
20
Vt1
VCO tuning input 1 (0 – VCC)21
Vt0
VCO tuning input 0 (0 – VCC)
22IFˍQp
IF Q output with terminals for differential signal (DC coupled)
23
IFˍQn
24
IFˍIn
IF I output with terminals for differential signal (DC coupled)
25
IFˍIp
26
VCC
Supply voltage (3.3 V, 112 mA typ.)27, 28 NC
Not connected29, 30 GND
Ground pins, also connected to the exposed die attach pad.
31 - 56 NC
Not connected(57)
GND
Exposed die attach pad of the QFN package, must be soldered to ground.

-6-120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

4

Specification

4.1

Absolute Maximum Ratings

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum
ratings.
Table 2Absolute Maximum Ratings
Parameter
SymbolMin
Max
Unit
Remarks / Condition
Supply voltage
VCC
3.6
V
to GND
DC voltage at tuning inputs
VVt-0.3
VCC + 0.3
V
Inputs Vt0, Vt1, Vt2, Vt3
DC voltage at enable inputs
VEN
-0.3
1.5
V
Inputs diven, pwrˍtx
Junction temperature
TJ
-50
150
°C
Storage temperature range
TSTG
150
°C
Floor life (out of bag) at factoryFL
168h
IPC/JEDEC J–STD-033A MSL Level 3
ambient (30°C / 60% RH)
Compliant 1)
ESD robustness
VESD
500
V
Human body model, HBM 2)
1) Device storage outside of the packaging is limited according to latest revision of JEDEC Standard IPC/JEDEC J–STD-033.
2) CLASS 1A according to ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity Testing, Human Body Model
Component Level, ANSI/ESDA/JEDEC JS-001-2011

4.2

Operating Range

Table 3Operating Range
Parameter
Ambient temperature
Supply voltage
DC voltage at tuning inputs
DC voltage at enable inputs

Symbol
TA
VCC
VVt
VEN

Min
-40
3.13
0
0

Max
85
3.47
VCC
1.2

Unit
°C
V
V
V

Remarks / Condition(3.3 V ± 5%)
Inputs Vt0 – Vt3
Inputs diven, pwrˍtx

Note: Do not drive input signals without power supplied to the device.

4.3

Thermal Resistance

Table 4
Thermal ResistanceParameter
Thermal resistance,
junction-to-ambient

Symbol

Min

Typ

Rthja

-7-

Max

Unit

Remarks / Condition

30

K/W

JEDEC JESD51-5

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

4.4

Electrical Characteristics

TA = -40°C to +85°C unless otherwise noted. Typical values measured at TA = 25°C and VCC = 3.3 V.
Table 5
Electrical Characteristics
Parameter
SymbolDC Parameters
Supply current consumption
ICC
Enable input voltage,
VENˍL
low level
Enable input voltage,
VENˍHhigh level
VCO tuning voltage
VVt
RF Parameters
VCO start frequency
fTXˍstart
VCO stop frequency
fTXˍstop
VCO tuning full bandwidth
ΔfTX
Number of adjustable frequency
Nbands
Pushing VCO
ΔfTX/ΔVCC
Phase noise
PN
Transmitter output power
PTX
EIRP RMS PowerPTX EIRP RMS

Min

Typ

Max

Unit

Remarks / Condition

100

112

128

mA

TX on, CW mode

0

0.3

V

Inputs diven, pwrˍtx

0.9

1.2

V

Inputs diven, pwrˍtx

0

VCC

V

Inputs Vt0 – Vt3

120.8
128.9
8.2

GHz
GHz
GHz

all Vt_0,1,2,3 = 0, Note 3
all Vt_0,1,2,3 = 3.3 V, Note 3
Vt0 – Vt3 interconnected
Vt1 – Vt3 used for bandswitching

-88
1

MHz/V
dBc/Hz
dBm

116.2
123.3
5.5

-7

119.3
125.4
6.3
8
27
-90
-3
7.7

dBm

at 1 MHz offset
Measured without antennas,
V(pwrˍtx) = 1.2 V
Measured at T A = 25°C,
FMCW, Duty Cylce 100%, Note 2

Divider ratio of TX signal
Ndiv
64
Divider output power
Pdiv
-10
-7
dBm
Note 1Divider output frequency
fdiv
1.84
1.99
GHz
Receiver gain
gRX
8
10
dB
Measured without antennas
IF frequency range
fIF
0
200
MHz
IF output impedance
ZOUT
500
Ω
Differential outputs
IQ amplitude imbalance
Aimb
-1.5
+1.5
dB
IQ phase imbalance
PHimb
-10
10
deg
Noise figure (DSB)
NF
8.7
dB
Simulated, at fIF = 1 MHz
Input compression point
1dB ICP-20
dBm
Measured without antennas
Note 1:
Measured single-ended. Divider outputs are loaded with 50 Ω, external decoupling capacitors are required.
50-Ω match is not required in application.
Note 2:FMCW band width = 1.0 GHz
Note 3:Operation within world-wide ISM Band and over the entire ambient temperature range. Further information
available.

-8-120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

5

Packaging

5.1

Outline Dimensions

Dimensions in mm

Figure 3

5.2

Outline Dimensions of QFN56, 0.5 mm Pitch, 8 mm × 8 mm

Package Code

Top-Side Markings

5.3

TRX067YYWW

Antenna Position

Dimensions in mm

Figure 4

A+G: antenna + glue

Position of Antenna Arrays (top view) and Cross Section (through RX Antenna)-9-

LF: lead frame

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

6

Application

6.1

Application Circuit Schematic

Figure 5

6.2

Application Circuit

Power Cycling

It is possible to reduce power consumption by power cycling the radar front end. Rapid power cycling with voltage
rise times between 10 µs and 100 µs is possible. At power-up, it must be ensured that no input signal is driven highbefore the supply voltage is stable. At power-down, all input signals must be pulled low before the supply voltage
is switched off.

6.3

Evaluation Kit

Silicon Radar offers evaluation kits for speeding up radar development. Please review our website and productsheets for more information: https://www.siliconradar.com/evalkits/.
The SiRad Easy® r4 platform supports development for many of Silicon Radar’s integrated IQ transceivers including
radar front end boards for TRXˍ120ˍ067. It serves as reference hardware and provides a design environment
including a graphical user interface for parameter setting. Its functionality and communication protocol are
adaptable to development projects.

- 10 -

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

6.4

Input / Output Stages

The following figures show the simplified circuits of the input and output stages. It is important that the voltage
applied to the input pins never exceeds VCC by more than 0.3 V. Otherwise, the supply current may be conducted
through the upper ESD protection diode connected at the pin.

Figure 6

Equivalent I/O Circuits

6.5

VCO Tuning Inputs

The VCO tuning inputs Vt0 – Vt3 are of analog nature but can be switched digitally as well. The tuning inputs differ
in their tuning ranges (tuning bandwidth) and slopes, whereby Vt3 has the widest tuning range, and Vt0 thenarrowest.
Table 6
Input
Vt0
Vt1
Vt2
Vt3

Typical VCO Tuning Bandwidth and Slope
VCO tuning bandwidth (MHz)ΔfTXˍVt0
720
ΔfTXˍVt1
750
ΔfTXˍVt2
1580
ΔfTXˍVt3
3450

Middle band slope (MHz/V)
ΔfTX /ΔVVt0
290
ΔfTX /ΔVVt1
300
ΔfTX /ΔVVt2
630
ΔfTX /ΔVVt3
1380

The VCO tuning range of a specific tuning input can be increased by connecting it to another tuning input. All
combinations of the four tuning inputs are allowed. Unused tuning inputs must be set to a fixed potential (between
0 and VCC). The interconnection of all inputs Vt0 – Vt3 leads to the maximum tuning bandwidth. For example, if Vt0
is used as tuning input, the variation of the potential at Vt1, Vt2, Vt3 in all logical combinations of 0 and VCC, results
in offsetting the tuning curve (see Figure 10).

- 11 -

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

7

Reliability and Environmental Test

Table 7
Reliability and Environmental Test according to JEDEC Standards
Qualification Test
JEDEC Standard
Condition
MSL3
J-STD-020E
Reflow simulation 3 times at 260°C
Temperature Cycling
JESD22-A104
850 cycles at -40°C … 125°C
HTSL
JESD22-A103
1,000 h at 150°C
HTOL
JESD22-A108
1,000 h at 85°C
THB
JESD22-A101
1,000 h at 85°C and 85% RH

Pass / Fail
pass
pass
pass
pass
pass

Tp ≤ Tc = 260°C
tp ≤ 30 s
TS.min = 150°C
TS.max = 200°C
tS = 60 s – 120 s
TL = 217°C
tL = 60 s – 150 s
t25°C-to-Tp ≤ 480 s

Figure 7

Reflow Profile for Pb-Free Assembly according to JEDEC Standard J-STD-020E- 12 -

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

8

Measurement Results
12

116

8
Voltage Gain (dB)Current Consumption (mA)

10
115

114

113

6
4
2

112

0
-40 -30 -20 -10

Figure 8

0 10 20 30 40 50 60 70 80 90
Temperature (°C)-40

Current Consumption vs. Temperature

Figure 9

-25

-20

-15

-10

Measured Conversion Gain of the Receiver
without antenna

127
126

126
000
125

125

001

124

010

123

011
100

122

101

121

110

120

111

124
Frequency (GHz)

Output Frequency (GHz)-30

Input Power (dBm)

127

123
122
121
120
119

119

118

118
0

Figure 10

0,5

1

1,5
2
Tuning Voltage (V)

2,5

3

0,0

3,5

VCO Tuning Curves. Vt0 is varied, while Vt1, Vt2
and Vt3 are driven high or low. For example, 011
means Vt3 = 0, Vt2 = 3.3 V, and Vt1 = 3.3 V.

Figure 11

124,2

127

124,0

126

123,8

125

123,6

124

Output Frequency (GHz)

Output Frequency (GHz)

-35

123,4
123,2
123,0
Vcc=3.6V
Vcc=3.3V
Vcc=3V

122,8
122,6

0,5

1,0

1,5
2,0
Tuning Voltage (V)

3,0

3,5

Full Bandwidth VCO Tuning.
Vt0, Vt1, Vt2, Vt3 are interconnected.
(Vt0 = Vt1 = Vt2 = Vt3)

123
122
121
Vcc=3.6V
Vcc=3.3V
Vcc=3V

120
119

122,4

2,5

118
0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

0,0

Tuning Voltage (V)Figure 12

0,5

1,0

1,5

2,0

2,5

3,0

3,5

Tuning Voltage (V)VCO Pushing - VCC ± 300 mV
Vt0 = sweep, Vt1 = Vt2 = 0, Vt3 = 3.3 V

Figure 13- 13 -VCO Pushing - Full Bandwidth Operation.
All tuning voltages, Vt0 = Vt1 = Vt2 = Vt3

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

Phase Noise of the Integrated Oscillator Measured
at Divider Output (1.89 GHz)

127

2

126

1
Normalized Output Power (dB)TX Output Frequency (GHz)

Figure 14

125
124
123
122
foutˍmin121

foutˍmax

120
119

0
-1
-2
-3
-4
-5
-6

118

-7

117
-40 -30 -20 -10

Figure 15

0 10 20 30 40
Temperature (°C)

50

60

70

80

-20

90

-10

0

10

20

30

40

50

60

70

Temperature (°C)

TX Output Frequency vs. Temperature

Figure 16- 14 -TX Output Power vs. Temperature(Normalized to 20°C)

8090

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

1098Realized Gain (dBi)

y
7
6
5
4
3
2

-x
E - Plane measured along Y axis
H - Plane measured along X axis

RX Antenna
TX Antenna

1
0
110

Figure 17

MMIC Orientation for Antenna Measurements

Figure 18115120Frequency (GHz)

125

130

Simulated Single Antenna Gain vs.
Frequency (Broad Side Direction)

The result of the measurements of the radiation patterns of TX and RX patch antennas at different frequencies areshown in Figure 19. The power levels are normalized separately for RX and TX measurements.

Figure 19

TX, 120 GHz

RX, 120 GHz

TX, 122.5 GHz

RX, 122.5 GHz

TX, 124 GHz

RX, 124 GHz

Radiation Pattern of TX and RX Patch Antennas, measured at different frequencies − H-Plane (blue), E-Plane(orange)- 15 -

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

The combined normalized radiation patterns of RX and TX antenna for FMCW operation are shown in Figure 20.
During the measurement, the IC was operated in FMCW mode with a bandwidth of 1 GHz. A corner reflector wasused as the target. The frequency of the measurement refers to the start frequency of the sweep.

FMCW, 119.3 GHz

FMCW, 122 GHz

FMCW, 123.2 GHz
Figure 20

Combined Radiation Pattern of TX and RX Patch Antennas,
measured in FMCW mode with 1-GHz modulation bandwidth at different frequencies − H-Plane (blue), E-Plane(orange)- 16 -

120-GHz IQ Transceiver TRXˍ120ˍ067
Data Sheet Version 1.1 25-Jul-2023

Disclaimer
Indie Semiconductor FFO GmbH 2023. The information contained herein is subject to change at any time without notice.
Indie Semiconductor FFO GmbH assumes no responsibility or liability for any loss, damage or defect of a product which is caused in whole or in part by(i)use of any circuitry other than circuitry embodied in a Indie Semiconductor FFO GmbH product,(ii)
misuse or abuse including static discharge, neglect, or accident,(iii)
unauthorized modifications or repairs which have been soldered or altered during assembly and are not capable of being tested by Indie
Semiconductor FFO GmbH under its normal test conditions, or(iv)
improper installation, storage, handling, warehousing, or transportation, or(v)
being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: Indie Semiconductor FFO GmbH makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any andall express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness
for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating toaccuracy or lack of negligence, with respect to this material, any Silicon Radar product and any product documentation. Products sold by Silicon Radar are notsuitable or intended to be used in a life support applications or components, to operate nuclear facilities, or in other mission critical applications where humanlife may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
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