DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpage

M3D088

BSV52
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 152004 Jan 14

NXP Semiconductors

Product data sheet

NPN switching transistor

BSV52

FEATURESPINNING• Low current (max. 100 mA)

PIN• Low voltage (max. 12 V).

1base

2emitter

3collector

APPLICATIONSDESCRIPTION• High speed saturated switching applications, especiallyin portable equipment.
handbook, halfpage

DESCRIPTION

33NPN switching transistor in a SOT23 plastic package.
1

MARKING
MARKING CODE(1)TYPE NUMBER
BSV52

1B2*

22Top view

MAM255Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.

Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATIONTYPE NUMBER
BSV52

PACKAGENAME−

DESCRIPTIONVERSIONplastic surface mounted package; 3 leads

SOT23

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−20V

VCEO

collector-emitter voltageopen base

−

12V

VEBO

emitter-base voltage

open collector−5V

ICcollector current (DC)−100mAICM

peak collector current−200mA

IBM

peak base current−100mAPtot

total power dissipation−250mW

Tstg

storage temperature−65+150°C

Tj

junction temperature−150°C

Tamb

operating ambient temperature−65+150°C

2004 Jan 14

Tamb ≤ 25 °C

2

NXP Semiconductors

Product data sheet

NPN switching transistor

BSV52

THERMAL CHARACTERISTICSSYMBOLRth(j-a)

PARAMETERCONDITIONS

thermal resistance from junction to ambient

VALUEUNIT

500K/Wnote 1Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO

PARAMETER
collector cut-off current

CONDITIONS

MIN.

TYP.

MAX. UNIT

IE = 0; VCB = 20 V−−400nA

IE = 0; VCB = 20 V; Tj = 125 °C−−30µA−−100nA

IC = 1 mA

25−−

IC = 10 mA

40−120IC = 50 mA

IEBO

emitter cut-off current

IC = 0; VEB = 4 VhFE

DC current gain

VCE = 1 V

VCEsatVBEsatcollector-emitter saturation
voltagebase-emitter saturation voltage

25−−

IC = 10 mA; IB = 300 µA−−300mV

IC = 10 mA; IB = 1 mA−−250mV

IC = 50 mA; IB = 5 mA−−400mV

IC = 10 mA; IB = 1 mA

700−850mV

IC = 50 mA; IB = 5 mA−−

1. 2V

Cc

collector capacitance

IE = ie = 0; VCB = 5 V; f = 1 MHz−−4pF

Ceemitter capacitance

IC = ic = 0; VEB = 1 V; f = 1 MHz−−4.5pF

fTtransition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz

400

500−

MHz−

−

10ns−

−

4nsSwitching times (between 10% and 90% levels); (see Fig.2)
tonturn-on timetd

delay time

trrise time

−

−

6ns

toff

turn-off time

−−

20

ns

ts

storage time

−

−

10ns

tf

fall time

−

−

10ns

2004 Jan 14

ICon = 10 mA; IBon = 3 mA;
IBoff = −1.5 mA

3

NXP Semiconductors

Product data sheet

NPN switching transistor

BSV52

VBB

handbook, full pagewidthRBoscilloscope

VCCRCVo(probe)
450 Ω(probe)
450 ΩR2ViDUT
R1
MLB826

Vi = 0.5 V to 4.2 V; T = 500 µs; tp = 10 µs; tr = ts ≤ 3 ns.
R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω.
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope: input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

2004 Jan 144oscilloscope

NXP Semiconductors

Product data sheet

NPN switching transistor

BSV52

PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads

SOT23DE

BAXHEv M A3QA
A112e1bpcw M BLpedetail X012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1max.

bpc

DEee1

HE

LpQv

w

mm1.1
0.9

0.1

0.48
0.38

0.15
0.09

3.0
2.8

1.4
1.2

1.9

0.95

2.5
2.1

0.45
0.15

0.55
0.45

0.2

0.1

OUTLINE
VERSION
SOT23

2004 Jan 14

REFERENCES
IEC

JEDEC

JEITA

EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

TO-236AB

5NXP Semiconductors

Product data sheet

NPN switching transistor

BSV52

DATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet atURL http://www.nxp.com.
DISCLAIMERS

above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents orother industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation orwarranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions
2004 Jan 146

NXP Semiconductors

Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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For additional information please visit: http://www.nxp.com
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands

R75/04/pp7

Date of release: 2004 Jan 14

Document order number: 9397 750 12431