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Ka band MMICIQ Mixer

Ka-IQM-2731 Previously named LE-Ka1340305
GaAs Diode IQ MMIC Mixer 27-31 GHzOverviewFeatures

Ka-IQM-2731 is an I/Q MMIC diode mixer with integrated quadrature coupler for single•

27 - 31GHz.

sideband (LO+IF / RF-LO) operation in both upconverter and downconverter modes.

•15dB conversion loss.

This MMIC is fabricated using GaAs Schottky diode technology and is designed for•

13dBm LO drive.

output frequencies in the range from 27 GHz to 31GHz using fixed LO and varying IF•>19dB LO-RF isolation.

(3GHz – 7GHz) signals or vice versa. The circuit typically supplies flat conversion loss
at moderate levels of LO power.
The underside of the die is gold plated. The MMIC is compatible with precision dieApplications

attach methods, as well as thermo-compression and thermosonic wire bonding,•High speed data communications.

making it ideal for MCM and hybrid microcircuit applications. All data shown herein is•Space communications.

measured with the chip in a 50 Ohm environment and contacted with RF probes, with•IOT.

results calibrated to the probe tips.

•Security.

Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

DOC REV 3

Page 1 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 27-31GHz

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product datasheet

Specification Overview(based on tests where IF = 4 GHz, LO = +13 dBm)

Parameter

Min.

Frequency

27		LO Frequency

Typ.

Max.

Units31GHz24		GHzLO Power

101316dBm

IF Frequency

35.4

7GHzConversion Loss

1517dB

LO-RF Isolation

19		dBNotes
All tests are carried out at 25°C.

Absolute Maximum Ratings

Parameter			Rating

LO Power			

25 dBmIF / RF Power			

22 dBmStorage Temperature			−65°C to +175°C

Channel Temperature			+175°C

Operating Temperature			−40°C to +85°C

Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

ESD (electrostatic discharge)
sensitive device. Charged devices
and circuit boards can discharge
without detection. Although thisproduct features proprietary
protection circuitry, damage may
occur on devices subjected to ESD.
Proper ESD precautions should
be taken to avoid performancedegradation or loss of functionality.

DOC REV 3

Page 2 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 27-31GHz

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product datasheet

Measured Performance Data
(LO=24GHz; RF=27–31GHz, -10dBm; IF=(RF-LO), (Downconverter Mode))40

Figure 1
Conversion Loss v RF Frequency

10dBm LO Power I
10dBm LO Power Q

35

13dBm LO Power I
13dBm LO Power Q

Conversion Loss (dB)30252015

105.0

0.0

27.0

27.5

28.0

28.5

29.0

29.5

30.0

30.5

31.0

31.5

32.0

RF Frequency (GHz)(LO=24GHz; RF=27–31GHz, -10dBm; IF=(RF-LO), (Downconverter Mode))
302810dBm LO Power I
10dBm LO Power Q

2613dBm LO Power I

24LO-IF Isolation (dB)Figure 2
LO-IF Isolation

13dBm LO Power Q
22201816141210

27.0

27.5

28.0

28.5

29.0

29.5

30.0

30.5

31.0

31.5

32.0

RF Frequency (GHz)Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

DOC REV 3

Page 3 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 27-31GHz

www.arralis.com

product datasheet

Measured Performance Data
(LO=24GHz, 13dBm; RF=29GHz; IF=(RF-LO), (Downconverter Mode))40

Figure 3
Conversion Loss (Image Band)

13dBm LO Power I
3513dBm LO Power Q

Conversion Loss (dB)

30

25

2015

10

5.0

0.0

16.00

17.00

18.00

19.00

20.00

21.00

22.00

RF Frequency (GHz)4.0(LO=24GHz, 13dBm; RF=29GHz; IF=(RF-LO), (Downconverter Mode))									Figure 4
Pin v Pout

2.0IF Output Power (dBm)

0.0
-2.0
-4.0

I-6.0

Q-8.0
-10-12-14-16
0.00

2.00

4.00

6.00

8.00

10.00

12.00

14.00

16.00

18.00

20.00

RF Input Power (dBm)

Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

DOC REV 3

Page 4 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 27-31GHz

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product datasheet

82
86

Outline Drawing

805

86

54

82

105

82

65

86
82

105

65

105

861.5

82

804
54
3320

Notes
1.

All dimensions are in um.

2.

Typical DC bond pads are 80um square.

3.

RF bond pads are 105 x 80um.

4.

Gold backside metalisation.

5.

Backside metal is ground.

6.

Die thickness is 100um

Die Packing Information
All die are delivered using gel-paks unless otherwise requested.

Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

DOC REV 3Page 5 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringments on the rights of other parties that may result for the use of the information herin. All specification are subject to change without notice.

5482

5465

2080

8682

285.5

10565.5

82

GaAs Diode IQ MMIC Mixer 27-31GHz

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product datasheetPad Descriptions

NameDescriptionLO		

LO pad. This pad is AC coupled.

RF		RF pad. This pad is AC coupled.

I		I pad. This pad is AC coupled.

Q		Q pad. This pad is AC coupled.

BOTTOM

The die backside must be connected to RF/DC ground.

Connection Configurations

Keep as short
as possible

Low Loss
SubstrateI

RF50Ω Line

RFConnection
Configuration

LOQ

Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

DOC REV 3

Page 6 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode IQ MMIC Mixer 27-31GHz

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product datasheet

General Notes on Assembly

Die should be mounted on conductive material such as gold-plated metal to provide agood ground and suitable heat sink, if necessary.
1.

Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/
Sn occurs at approximately 280oC so the die (plus mount and preform) is initiallyheated up to 180oC and then it is heated for approximately 10 seconds to 280oC
using a nitrogen heat gun. The device will survive 10 seconds at this temperature.
The static breakdown for GaAs devices is approximately 330oC.

2.

Pure, dry nitrogen should be used as the heat source.

3.

If the devices cannot be lifted/ placed by a vacuum device, then ESD die-lifting
tweezers are preferable.

4.

Aluminium wire must not be used.

Disclaimer
The information contained herein is believed to be reliable; however, Arralis makes no warranties
regarding the information and assumes no responsibility or liability whatsoever for the use of theinformation contained herein. All information is subject to change without notice, therefore customers
should obtain the latest relevant information before placing orders for Arralis products. The information
contained herein does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any
other intellectual property rights.
This information does not constitute a warranty with respect to the product described, and Arralis
disclaims any and all warranties either expressed or implied, relating to sale and/or use of Arralis products
including liability or warranties relating to fitness for a particular purpose, consequential or incidental
damages, merchantability, or infringement of any patent, copyright or other intellectual property right.
Without limiting the generality of the foregoing, Arralis products are not warranted or authorised for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications wherea failure would reasonably be expected to cause severe personal injury or death.
Copyright 2021 © Arralis

Ka band Datasheet

Ka-IQM-2731

Issue date: 30 April 21

DOC REV 3

Page 7 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

©2021 Arralis Ltd. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.

Arralis USA OfficeArralis European Offices+(1) 386 301 3249 (USA)t: +(44) 1793 239670 (UK)e: sales@arralis.com

Ka band Datasheetarralis.com
Ka-IQM-2731

e: emilie.wren@arralis.com

Issue date: 30 April 21

DOC REV 3

Page 8 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.