F NTG

Research Society

第 57 回フラーレン・ナノチューブ・グラフェン
総合シンポジウム

The 57th Fullerenes-Nanotubes-Graphene General Symposium

講演要旨集
Abstracts2019 年 9 月 3 日（火） ～ 5 日（木）名古屋大学 坂田・平田ホール
Nagoya University, Sakata Hirata Hall主催 フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society
共催 ・ 後援
日本化学会

The Chemical Society of Japan

協賛
日本物理学会
応用物理学会
高分子学会
電気化学会

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

電子冷却 -100℃
極低ノイズ
0.0005 e-/pix/sec-100℃電子冷却型高感度CCDカメラ

高感度QE
波長1μm域で75％以上
高速読み出し＠16MHz/AD◎優れた冷却方式

20℃水冷により CCD が結露しません。
0.0006

NA

5

100%
0

空
冷

70%

-90

60%

-80

-75

20%
10%
0

NA

30%

-80ºC

40%

-85

HR-Sensors
LD-Sensors
BI-Sensors
Unichrome

-80ºC

50%

Competitor A Competitor B Competitor C Competitor D-80ºC

Quantum Eﬃciency

80%

-95

結露のリスク-95ºC

90%0.00056NA

can only reach -95ºC
with 10ºC coolant

10◎高感度QE

0.00

10ºC

15

0.008

（低温水冷）
結露

20ºC

水
冷

0.00052010ºC

暗電流ノイズ(e-/pixel/second)-70
Competitor A Competitor B Competitor C Competitor D

250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100

Wavelength (nm)〒170-0013

テレダイン・ジャパン株式会社
プリンストンインスツルメンツ

東京都豊島区東池袋 3-4-3 池袋イースト13F
TEL 03-6709-0631 FAX 03-6709-0632

Abstract of
The 57 Fullerenes-Nanotubes-Graphene General Symposiumth

Sponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of Japan
Supported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

Date : September 3rd (Tue.) –5th (Thu.), 2019
Place : Sakata Hirata Hall, Nagoya University

Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan

Presentation Time : Special Lecture (25 min presentation + 5min discussion)

Invited Lecture (10 min presentation + 5 min discussion)Award Nominee Lecture (10 min presentation + 10 min discussion)
General Lecture (10 min presentation + 5min discussion)
Poster Preview (1 min presentation without discussion)

第 57 回フラーレン･ナノチューブ･グラフェン総合シンポジウム
講演要旨集
主催 : フラーレン･ナノチューブ･グラフェン学会
共催･後援 : 日本化学会
協賛 : 日本物理学会、応用物理学会、高分子学会、電気化学会
日時 : 令和元年 9 月 3 日(火)～9 月 5 日(木)場所 : 名古屋大学 坂田・平田ホール〒464-8602 名古屋市千種区不老町
発表時間 : 特別講演（発表 25 分 + 質疑応答 5 分）
招待講演（発表 10 分 + 質疑応答 5 分）
受賞対象者講演（発表 10 分 + 質疑応答 10 分）
一般講演（発表 10 分 + 質疑応答 5 分）
ポスタープレビュー（発表 1 分・質疑応答 なし）

展示団体御芳名 (五十音順、 敬称略）
(株）アントンパール・ジャパン(株）セントラル科学貿易
テレダイン・ジャパン（株）
フィルジェン（株）
ミカサ（株）(株）名城ナノカーボン(株）リッチモアインターナショナル

広告掲載団体御芳名 (五十音順、 敬称略）
アイクストロン(株)エクセルソフト(株)工機ホールディングス(株)(株）三洋商事(株）セントラル科学貿易
ソーラボジャパン（株）（株）ダルトン
テレダイン・ジャパン（株）
日本電子（株）(株）堀場製作所

Contents
Time Table ・・・・・・・・・・・・・・・・・・i
Chairperson ・・・・・・・・・・・・・・・・・iii
ProgramJapanese
・・・・・・・・・・・・iv
English ・・・・・・・・・・・・ xvii
Abstracts
Special Lecture ・・・・・・・・・・ 1
Invited Lecture ・・・・・・・・・・ 11
General Lecture ・・・・・・・・・・ 13
Poster Preview ・・・・・・・・・・ 41
Author Index ・・・・・・・・・・・・・・・・ 131

目次
早見表 ・・・・・・・・・・・・・・・・・・・ i
座長一覧・・・・・・・・・・・・・・・・・・・iii
プログラム 和文・・・・・・・・・・・・・・・ iv
英文・・・・・・・・・・・・・・xvii
講演予稿
特別講演・・・・・・・・・・・・・ 1
招待講演・・・・・・・・・・・・・11
一般講演・・・・・・・・・・・・・13
ポスター発表・・・・・・・・・・・41
発表索引・・・・・・・・・・・・・・・・・・ 131

プログラム早見表
９月３日 （火）9:00
9:30

受付開始 8:30～
開会挨拶 8:55～
特別講演（湯村 守雄）
9：00-9：30
一般講演 4件

９月４日 （水）9:00

受付開始 8:45～
講演開始 9:00～
大澤賞・飯島賞
受賞対象者講演 4件
9:00-10:25

11:30
12:15

13:30

15:00
15:30

（グラフェンの物性）

ポスタープレビュー( 1P-1 ～ 1P-30)
11:30-12:15
昼食(幹事会）
12:15-13:30
ポスターセッション

16:30
17:00
17:30

招待講演 （Xuan Viet Nguyen） 9：30-9：45

一般講演 3件（バイオ ・ その他）

10:25

休憩 10:25-10:45
10:45
特別講演 （千足 昇平）
10:45-11:15
11:15
一般講演 1件 11:15-11:30
11:30
12:15

13:30

（グラフェンの物性）

ポスタープレビュー( 2P-1 ～ 2P-29 )11:30-12:15
昼食
12:15-13:30

ポスターセッション

9:45-10:30
休憩 10:30-10:45
10:45
特別講演 （越野 幹人）
10:45-11:15
11:15
一般講演 1件 11:15-11:30
10:30

11:30
12:15

13:30

（グラフェンの物性）

ポスタープレビュー( 3P-1 ～ 3P-30 )11:30-12:15
昼食
12:15-13:30

ポスターセッション

13:30-14:00 若手奨励賞候補審査優先時間

13:30-14:00 若手奨励賞候補審査優先時間【セミナー室】
13:30-15:00【セミナー室】
13:30-15:00【セミナー室】
13:30-15:00

特別講演 (柚原 淳司)
15:00-15:30
一般講演 3件
15:30-16:15
休憩 16:15-16:30
特別講演 (Lain-Jong Li)
16:30-17:00
特別講演 (竹井 邦晴)
17:00-17:30
一般講演 2件（原子層・グラフェンの応用）17:30-18:00

18:00

9:30

受付開始 8:45～
講演開始 9:00～
特別講演 （早水 裕平）
9:00-9:30

13:30-14:00 若手奨励賞候補審査優先時間

(原子層）

16:15

9:00

9:45

（ナノチューブの応用・
ナノチューブの生成と精製）

9：30-10：30
10:30
休憩 10:30-10:45
10:45 特別講演 (齋藤 理一郎)
10:45-11:15
11:15
一般講演 1件 11:15-11:30

９月５日 （木）

15:00
15:15
15:45
16:15
16:30
17:00

授賞式

15:00-15:15
総会
15:15-15:45
特別講演 (射場 英紀)
15:45-16:15
休憩 16:15-16:30
特別講演 （宮内 雄平）
16:30-17:00
一般講演 4件

15:00
15:30
15:45

一般講演 2件 15:00-15:30（グラフェンの物性）招待講演（Thomas Pichler） 15：30-15：45

一般講演 3件(ナノチューブの物性）

15:45-16:30
16:30（原子層・グラフェン生成 ・
フラーレンの応用・フラーレンの化学）

18:00
18:30

17:00-18:00
移動懇親会【レストラン花の木】
18:30-20:30

講演会場 坂田・平田ホール
特別講演 発表25分・質疑5分
招待講演 発表10分・質疑5分
賞対象者講演 発表10分・質疑10分
一般講演 発表10分・質疑5分
ﾎﾟｽﾀｰﾌﾟﾚﾋﾞｭｰ 発表1分・質疑なし

20:30

i

Time table
September 3 (Tue.)

September 4 (Wed.)

September 5 (Thu.)

Registration begins at 8:30
Opening greeting at 8:55
9:00
Special Lecture 9:00-9:30( Motoo Yumura )9:30
General Lectures [4]Registration begins at 8:45
Lectures begin at 9:00
9:00
Lectures of Osawa Award
and Iijima Award Nominees
9:00-10:25

Registration begins at 8:45
Lectures begin at 9:00
9:00
Special Lecture 9:00-9:30( Yuhei hayamizu )9:30(Applications of nanotubes ・

10:00

Formation and purification of nanotubes)

9:30-10:30
Coffee Break 10:30-10:45
10:45 Special Lecture 10:45-11:15( Riichiro Saito )11:15
General Lectures [1]11:15-11:30

10:30

11:30
12:15

13:30

（Properties of graphene）

Poster Preview( 1P-1 through 1P-30 )11:30-12:15
Lunch(Administrative meeting)
12:15-13:30
Poster Session

10:25

Coffee Break 10:25-10:45
10:45 Special Lecture 10:45-11:15( Shohei Chiashi )11:15
General Lectures [1]11:15-11:30
11:30
12:15

13:30

（Properties of graphene）

Poster Preview( 2P-1 through 2P-29 )11:30-12:15
Lunch
12:15-13:30

Poster Session（Bio ・ Other topics)

10:30

Coffee Break 10:30-10:45
10:45 Special Lecture 10:45-11:15( Mikito Koshino )11:15
General Lectures [1]11:15-11:30
11:30
12:15

13:30

（Properties of graphene）

Poster Preview( 3P-1 through 3P-30 )11:30-12:15
Lunch
12:15-13:30

Poster Session

During 13:30-14:00, please give

During 13:30-14:00, please give

During 13:30-14:00, please givepriority to selection of candidates

priority to selection of candidates

priority to selection of candidates

for Young Scientist Poster Award

for Young Scientist Poster Award

for Young Scientist Poster Award【 Seminar room 】
13:30-15:00
15:00
Special Lecture 15:00-15:30( Junji Yuhara )15:30
General Lectures [3](Atomic Layers）

15:30-16:15
16:15
Coffee Break 16:15-16:30
16:30 Special Lecture 16:30-17:00( Lain-Jong Li )17:00
Special Lecture 17:00-17:30( Kuniharu Takei )17:30
General Lectures [2]17:30-18:00(Atomic Layers ・ Applications of graphene）

18:00

Invited Lecture（Xuan Viet Nguyen） 9：30-9：45

General Lectures [3]10:00-10:30【 Seminar room 】
13:30-15:00
15:00
Awards Ceremony 15:00-15:15
15:15
General Meeting
15:15-15:45
15:45
Special Lecture 15:45-16:15( Hideki Iba )16:15
Coffee Break 16:15-16:30
16:30 Special Lecture 16:30-17:00( Yuhei Miyauchi )17:00
General Lectures [4]【 Seminar room 】
13:30-15:00
15:00
General Lectures [2]15:00-15:30
15:30
15:45

（Properties of graphene）
Invited Lecture（Thomas Pichler） 15：30-15：45

General Lectures [3](Properties of nanotubes)

15:45-16:30
16:30（Atomic Layers・Graphene synthesis・Applications of fullerenes・Chemistry of fullerenes）

18:00
18:30

17:00-18:00
MovingBanquet【 Restaurant Hananoki 】
18:30-20:30

20:30
Place : Sakata Hirata Hall
Special Lecture : 25 min (Presentation) + 5 min (Discussion)
Invited Lecture : 10 min (Presentation) + 5 min (Discussion)Award Nominee Lecture : 10 min (Presentation) + 10 min (Discussion)
General Lecture : 10 min (Presentation) + 5 min (Discussion)
Poster Preview : 1 min (Presentation)ii

座長一覧 (Chairpersons)
9月3日 (火)

(敬称略）

セッション
特別講演(湯村 守雄）
一般講演
特別講演(齋藤 理一郎）
一般講演
ポスタープレビュー時
間
9:00 ～9:30
9:30 ～10:30
10:45 ～ 11:15
11:15 ～ 11:30
11:30 ～ 12:15

特別講演(柚原 淳司）
一般講演
特別講演(Lain-Jong Li）
特別講演(竹井 邦晴）
一般講演

15:00 ～ 15:30
15:30 ～ 16:15
16:30 ～ 17:00
17:00 ～ 17:30
17:30 ～ 18:00

座
長
岡崎 俊也
千足 昇平
片浦 弘道
丸山 実那
中西 勇介
大野 雄高
蒲 江
竹延 大志
松田 一成

9月4日 (水)セッション
一般講演(受賞対象者）
特別講演(千足 昇平）
一般講演
ポスタープレビュー時
間
9:00 ～ 10:25
10:45 ～11:15
11:15 ～11:30
11:30 ～ 12:15

特別講演(射場 英紀）
特別講演(宮内 雄平）
一般講演

15:45 ～ 16:15
16:30 ～ 17:00
17:00～ 18:00

座
長
斎藤 晋
山本 貴博
蓬田 陽平
松永 正広
松尾 豊
岡田 晋
大町 遼

9月5日 (木)セッション
特別講演(早水 裕平）
招待講演(Xuan Viet Nguyen）
一般講演
特別講演(越野 幹人）
一般講演
ポスタープレビュー時
間
9:00 ～ 9:30
9:30 ～ 9:45
9:45 ～ 10:30
10:45～ 11:15
11:15 ～ 11:30
11:30 ～ 12:15

一般講演
招待講演(Thomas Pichler）
一般講演

15:00 ～ 15:30
15:30 ～ 15:45
15:45 ～ 16:30

iii

座
長
吾郷 浩樹
前田 優
北浦 良
岡田 光博
西原 大志
宮田 耕充
廣谷 潤

９月 ３日 （火）特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
特別講演 ( 9:00-9:30 )Putting Carbon Nanotubes to Use as Industrial Materials-Research and Development of Carbon Nanotube at AIST since 1991

1S-1

1

* 湯村 守雄
一般講演 ( 9:30-10:30 )ナノチューブの応用 ・ ナノチューブの生成と精製
1-1Supercapacitors with no capacitance decay at -50 ℃ enabled by aligned CNT bundles
connected with traversing CNTs

13

* Xiang Gao, Lingchang Li, Mengmeng Zhang, Don. N Futaba, Ming Xu
1-2

カーボンナノチューブベースの貴金属を用いない高性能電極触媒のデザイン

14

西田 仁, Jun Yang, 内村 俊介, 松田 潤子, * 中嶋 直敏
1-3

マルチスケール疎水性相互作用を用いたカーボンナノチューブの分離

15* 片浦 弘道, 都築 真由美, 杉田 知子, 久保田 真理子, 王 国偉, 田中 丈士
1-4

イソマルトデキストリンを用いた水系2相分離による半導体性カーボンナノチューブ抽出と薄膜トランジスタ応用

16* 大町 遼, 小室 智彦, 松本 海成, 中嶋 みな子, 渡邊 光, 廣谷 潤, 大野 雄高, 篠原 久典＞＞＞＞＞＞＞ 休憩 ( 10:30-10:45 ) ＜＜＜＜＜＜＜特別講演 ( 10:45-11:15 )円偏光を用いたナノチューブ及び２次元物質の光学的性質

1S-2

2

* 齋藤 理一郎
一般講演 ( 11:15-11:30 )グラフェンの物性
1-5
局在プラズモンによるグラフェンの非垂直電子励起

17

張 晋江, 周 睿風, 南本 大穂, * 村越 敬
ポスタープレビュー ( 11:30-12:15 )（☆） 若手奨励賞候補
若手奨励賞候補
1P-1
Time-resolved photoluminescence spectroscopy of epitaxial bilayer graphene on SiC
☆

1P-2
☆

41

* Kensuke Saito, Tomonari Koishi, Jianfeng Bao, Wataru Norimatsu, Michiko Kusunoki,
Hideo Kishida, Takeshi Koyama
配向CNT/エポキシ樹脂複合材料の力学・電気特性におけるCNT直径の効果* 露口 陽平, 細木 和也, 中野 貴之, 井上 翼

iv

42

９月３日 （火）
1P-3
☆
1P-4
☆

The effect of gas phase species on chirality selectivity between (6,4) and (6,5) single-walledcarbon nanotubes

43* 椎名 悟, 志摩 拓哉, 許 斌, 金子 俊郎, 加藤 俊顕
Wavelength modulation of near infrared photoluminescence from single-walled carbon
nanotubes functionalized with diarylethene derivatives

44* Yasuto Nakagawa, Tomohiro Shiraki, Tsuyohiko Fujigaya

1P-5☆

微小光共振器を導入した単層WS2発光デバイス

1P-6

Restoring intrinsic optical properties of CVD-grown MoS2 monolayers and theirheterostructures45* 小椋 友寛, 山田 知之, 和田 尚樹, 遠藤 尚彦, 山下 兼一, 宮田 耕充, 蒲 江, 竹延 大志☆

* Kana Kojima, Hong En Lim, Zheng Liu, Wenjin Zhang, Takahiko Endo, Kenji Watanabe,
Takashi Taniguchi, Kazunari Matsuda, Yuhei Miyauchi, Yasumitsu Miyata, Tetsuki Saito,
Yusuke Nakanishi, Yu Kobayashi, Yutaka Maniwa

1P-7☆

Wide-range control of excitonic properties in monolayer WS2 by dielectric screening effect

1P-8

Growth of Transition-metal-dichalcogenide-based two-dimensional superstructures with
Cold-walled Metal-Organic CVD

46

47* 梶野 祐人, 音 賢一, 山田 泰裕☆

* 飯田 智士, 堀田 貴都, 渡邊 賢司, 谷口 尚, 篠原 久典, 北浦 良

1P-9☆

単層MoS2のPL発光とラマン散乱に対するCVD h-BNの厚さ依存性

48

49* 本田 大樹, 田中 大地, 内田 勇気, 河原 憲治, 吾郷 浩樹

ナノチューブの物性
Charge-state investigation on metallic and semiconducting SWCNTs with various diameters

1P-10

50

* 桒原 有紀, 斎藤 毅
1P-11

Fabrication of large-area aligned films of single-wall carbon nanotubes using artificiallygrooved membrane filters

51* Atsuhiro Katagiri, Natsumi Komatsu, Junko Eda, Hitomi Okubo, Kanako Horiuchi, Kan
Ueji, Yohei Yomogida, Weilu Gao, Junichiro Kono, Kazuhiro Yanagi
1P-12

時間領域サーモリフレクタンス法による金電極上の単層カーボンナノチューブの熱物性評価

52* 松岡 勇也, 上治 寛, 松尾 博之, 蓬田 陽平, 八木 貴志, 柳 和宏
1P-13

Effect of palladium nanoparticle decoration on thermoelectric peeformance of carbon
nanotubes with vacancy defects: first principles simulation

53* Nayu Araki, Takahiro Yamamoto
ナノチューブの生成と精製
1P-14

両極性パルスアーク放電法を用いた炭素ナノ材料の合成* 三重野 哲, アブル カラム モハメド, カジ ハニウム マリアv54

９月３日 （火）1P-15

ホットウォールＣＶＤ法によるIr触媒を用いた単層カーボンナノチューブ成長：エタノール流量依存性55* 三崎 亜衣, 鈴木 智子, 丸山 隆浩
1P-16

Growth of dense SWCNT from iron oxide nanoparticles for spin-capable forest

56* Ryosuke Goto, Kento Tabata, Takayuki Nakano, Kazuhiko Takahashi, Yoku Inoue
1P-17

Sub-nanometer diameter SWCNT Growth by Alcohol catalytic CVD

57* Kamal P Sharma, Daiki Yamamoto, Aliza K. Sharma, Takahiro Maruyama
ナノチューブの応用
ナノチューブ／コットン化合物の研究と小型荷重センサーの開発

1P-18

58

* アブドル・モミン モハマド, ジェルール・ラーマン モハマド, 三重野 哲
1P-19

水晶振動子マイクロバランス法を用いた単層カーボンナノチューブ電極のイオン吸着挙動

59* 高橋 実夏子, 筒井 誠人 , 竹内 裕, Ayar Al zubaidi, 石井 陽祐, 川崎 晋司
1P-20

イオン液体を電解液としたナノカーボンキャパシタ電極の高温特性

60* 浅井 七海, 石井 陽祐, 川崎 晋司
1P-21

単層カーボンナノチューブ/金属超微粒子複合体の二酸化炭素還元触媒能61* 石川 沙恵, 稲山 瞬也, 近藤 航平, 渡邉 裕介, 石井 陽祐, 川崎 晋司
内包ナノチューブ
1P-22
Precise carrier density control of SWCNTs by controlled filling of donner and accepter
molecules

62* Guowei Wang, Takeshi Tanaka, Atsushi Hirano, Hiromichi Kataura
ナノホーン
1P-23
Novel Preparation Method of Carbon Nanobrushes using CO2 Laser Ablation

63* 弓削 亮太, 當山 清彦, 小坂 眞由美, 佐藤 英行
グラフェンの物性
1P-24Topological phases in graphene nanoribbons

64* 大淵 真理グラフェン生成In situ XRD measurement of precipitation of multilayer graphene

1P-25

65

* 山田 純平, 上田 悠貴, 丸山 隆浩, 成塚 重弥
1P-26

ナノダイヤモンドを用いた析出法によるSiO2/Si基板上への多層グラフェンの直接成長 ～高温速度依存性～* 樫尾 達也, 中島 諒人, 山本 大地, 丸山 隆浩, 成塚 重弥

vi66

９月３日 （火）グラフェンの応用
細孔を通して移動するヌクレオチドの振動スペクトルに対するグラフェン細孔端でのAuクラス
ターの影響

1P-27

67

* Tatiana Zolotoukhna, Momoko Yamada
1P-28

大面積二層グラフェンへの金属塩化物のコインターカレーション

68* 本山 周, 河原 憲治, 松本 里香, 吾郷 浩樹
原子層
1P-29

Role of the Hall conductivity in the optical absorption of circularly polarized light69* Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito
1P-30

Electrostatic properties of positively charged graphene edges terminated by functional groups

70* Yanlin Gao, Susumu Okada＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:00 )13:30-14:00 若手奨励賞候補審査優先時間
特別講演 ( 15:00-15:30 )１S-314族元素からなるハチの巣状原子層材料の成長と構造解析

3* 柚原 淳司
一般講演 ( 15:30-16:15 )原子層
1-6In-situ monitoring of monolayer WS2 growth18* 亀山 智矢, 李 超, 金子 俊郎, 加藤 俊顕
1-7

Growth of pentagonal and diamond shaped h-BN crystals

19* Kamal Prasad Sharma, Yuta Niimi, Aliza K. Sharma, Takahiro Maruyama
1-8

Carrier accumulation in bilayer MoS2 under a perpendicular electric field

20* Mina Maruyama, Susumu Okada＞＞＞＞＞＞＞ 休憩 ( 16:15-16:30 ) ＜＜＜＜＜＜＜特別講演 ( 16:30-17:30 )1S-4
Growth of Transition Metal Dichalcogenide 2D Layers for Electronics

4* Lain-Jong Li
１S-5

5

ナノカーボンを用いたフレキシブルデバイス* 竹井邦晴vii

９月３日 （火）一般講演 ( 17:30-18:00 )原子層 ・ グラフェンの応用
1-9
Room-Temperature Valley-Polarized Light-Emitting Devices via Strained Monolayer
Semiconductors

21* 蒲 江, 松岡 拓史, 山田 知之, 小林 佑, 高口 祐平, 宮田 耕充, 竹延 大志
1-10Interface dependent photoresponsivity in graphene/GaN heterojunction* Ajinkya Ranade, Rakesh Mahyavanshi, Pradeep Desai, Masaki Tanemura, Golap Kalita

viii

22

９月 ４日 （水）特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
大澤賞・飯島賞受賞対象者講演
発表 １０分 ・ 質疑応答 １０分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
一般講演 ( 9:00-10:25 )大澤賞・飯島賞受賞対象者講演
2-1
有限長カーボンナノチューブ分子とゲスト回転子からなる分子ベアリングの構築と固体内回転

23* 松野 太輔, 中井 祐介, 真庭 豊, 藤田 昌暉, 福永 健悟, 佐藤 宗太, 磯部 寛之
2-2

Controlled Redox of Lithium-ion Endohedral Fullerene on Carbon Nanotubes for Efficientand Stable Metal-free Perovskite Solar Cells

24* Il Jeon, Ahmed Shawky, 岡田 洋史, Esko Kauppinen, 丸山 茂夫, 松尾 豊
2-3

hBN発光中心の格子欠陥構造に対する発光波長の特定

25* 小澤 大知, Ananth Govind Rajan, Jamie H. Warner, Daniel Blankschtein, Michael S. Strano
2-4

Designing two-dimensional tetradymites with 20% thermoelectric efficiency

26* Nguyen T. Hung, Ahmad R. T. Nugraha, Riichiro Saito＞＞＞＞＞＞＞ 休憩 ( 10:25-10:45 ) ＜＜＜＜＜＜＜特別講演 ( 10:45-11:15 )Templated synthesis of nanomaterials with single-walled carbon nanotubes and theirproperties

2S-1

6

千足 昇平
一般講演 ( 11:15-11:30 )グラフェンの物性
2-5
電界放出および電界イオン顕微鏡法によるグラフェン端の電子軌道とスピン分極の観察

27* 齋藤 弥八, Watanabe Yuhdai, Hoshino Tohru, Nakahara Hitoshi, Nagai Shigekazu,
Ikemizu Hiromu, Kunoh Kazuya, Hata Koichi
ポスタープレビュー ( 11:30-12:15 )（☆） 若手奨励賞候補
若手奨励賞候補
2P-1
Influence of capacitance on field intensity in nano-scale filed emitters☆
* Keita Funayama, Hiroya Tnaka, Jun Hirotani, Keiichi Shimaoka, Yutaka Ohno, Yukihiro

71

Tadokoro
2P-2

☆

2P-3

☆

Growth of single-walled carbon nanotubes on chemically etched graphene layers by coldwall CVD using Ir catalysts

72* Aliza Khaniya Sharma, Kamal P Sharma, Saeki Mayumi, Saida Takahiro, Naritsuka
Shigeya, Maruyama Takahiro
単層カーボンナノチューブにおける高次高調波発生のゲート制御* 西留 比呂幸, 永井 恒平, 内田 健人, 一ノ瀬 遥太, 福原 健吾, 枝 淳子, 大久保 瞳, 蓬田
陽平, 田中 耕一郎, 柳 和宏
ix73

９月 ４日 （水）
2P-4

☆
2P-5

☆

2P-6

☆
2P-7

☆
2P-8

☆
2P-9

☆

ベンジルアルコールを用いてエステル化したグラフェン量子ドットの発光特性と太陽電池への応用

74* 城 涼佳, 菅井 俊樹, 桒原 彰太Interface electroluminescence from WS2/WSe2 in-plane heterostructures

75* Naoki Wada, Jiang Pu, Wenjin Zhang, Zheng Liu, Hirofumi Matsuoka, Kazunari Matsuda,
Yusuke Nakanishi, Yuhei Miyauchi, Taishi Takenobu, Yasumitsu Miyata, Yutaka Maniwa
古典力学的手法によるファンデルワールス・ヘテロエピタキシーの再現

76* 岡田 光博, 内山 揚介, 清水 哲夫, 久保 利隆, 北浦 良
MBE法を用いた遷移金属ダイカルコゲナイドのヘテロ構造の作製

77* 村井 雄也, 一瀬 七海, 保田 諭, 北浦 良
Machine-learning approach for predicting low temperature valley polarization landscapes in
2D semiconductors

78* 田中 絢也, 八谷 健吾, 張 文金, 松田 一成, 宮内 雄平
Single-layer MoS2 nanogenerator for harvesting clean electric energy from dynamic motion ofliquid79* Adha Sukma Aji, Ryohei Nishi, Hiroki Ago, Yutaka Ohno

フラーレン
同位体置換されたC60の赤外スペクトルシミュレーション

2P-10

80

* 若林 知成, 百瀬 孝昌, マリオ E. ファハールト
フラーレンの化学
2P-11
フラーレンカチオン中間体を用いるベンゾチエノフラーレンの合成

81* 松尾 豊, Yun Yu, Xiao-Yu Yang, 上野 裕, 岡田 洋史
ナノチューブの物性
カーボンナノチューブの引張強度のカイラリティ依存性

2P-12

82

* 高倉 章, 別府 幸, 西原 大志, 福井 章人, 小関 貴裕, 生津 資大, 宮内 雄平, 伊丹 健一郎
2P-13

電子構造を選択した単層カーボンナノチューブ自立膜の面内方向と面直方向の熱伝導率83* 松尾 博之, 上治 寛, 蓬田 陽平, 八木 貴志, 柳 和宏
2P-14

Solving the Thermoelectric Trade-Off Problem with Metallic Carbon Nanotubes

84* 一ノ瀬 遥太, 吉田 朱里, 堀内 加奈子, 福原 健吾, 小松 夏実, Gao Weilu, 蓬田 陽平, 松原 愛帆, 山本 貴博, 河野 淳一郎, 柳 和宏
2P-15

Theoretical Study on Thermoelectric Properties of Nitrogen-Doped Carbon Nanotubes with
Various Diameters* 松原 愛帆, 笹岡 健二, 山本 貴博

x85

９月 ４日 （水）ナノチューブの生成と精製
Pt触媒を用いたアルコールCVD法における単層カーボンナノチューブの成長量増加に向けて

2P-16

86

* 山本 大貴, カマル サラマ, 才田 隆広, 成塚 重弥, 丸山 隆浩
2P-17

Ir触媒を用いた通常型コールドウォールCVD法による単層カーボンナノチューブの垂直配向
成長87* 佐伯 檀, カマル サラマ, 才田 隆広, 成塚 重弥, 丸山 隆浩
2P-18

Interaction between defective carbon nanotubes and surfactant molecules88* 實宝 秀幸, 大淵 真理
2P-19

Growth, etching, and regrowth of individual single-walled carbon nanotubes: Isotope
labeling study

89* Taiki Inoue, Bunsho Koyano, Shun Yamamoto, Keigo Otsuka, Rong Xiang, Shohei
Chiashi, Shigeo Maruyama
ナノチューブの応用
Bright electroluminescence from air-suspended carbon nanotubes

2P-20

90

* 寺嶋 亘, 町屋 秀憲, 大塚 慶吾, 石井 晃博, 加藤 雄一郎
2P-21

気体放電によるカーボンナノチューブフィラメントの形成および延伸における電極配置の効果

91* 廣村 雅俊, 眞方 総一郎, 佐藤 英樹
内包ナノチューブ
2P-22
フッ化フラーレンの単層カーボンナノチューブへの内包とその物性92* 長谷川 毅, 近藤 俊輔, 眞鍋 駿, 近藤 航平, 石井 陽祐, 川崎 晋司
ナノホーン
Carbon nanobrushes-based gas sensor

2P-23

93

* Mayumi Kosaka, Ryota Yuge
グラフェンの応用
酸化グラフェンとカーボンナノチューブを用いた 超撥水・超親油スポンジの作製

2P-24

94

* 森國 雄貴, 原 正則, 吉村 雅満
2P-25

Zinc Oxide Nanoparticle Decorated on Nitrogen-Doped Graphene Sheet as Advanced
Supercapacitor Electrode95* Rohit Yadav, Masanori Hara, Prerna Joshi, Masamichi Yoshimura
ナノワイヤー
Enhancement of electric field by surface plasmon on hollow cylinder

2P-26

96

* Yuan Tian, Fenda Pratama, Muhammad Ukhtary, Riichiro Saito
2P-27

カーボンナノチューブ紡糸の作製と可紡性評価* Shinji Igimi, Morihiro Okada, Taiki Inoue, Shigeo Maruyama, Shohei Chiashi

xi

97

９月 ４日 （水）
原子層
2P-28

Laser-energy dependent helicity-changing Raman spectra of MoS2

98

* Tong Wang, Nguyen T. Hung, Ahmad R.T. Nugraha, Riichiro Saito
2P-29

Edge plasmon in rectangular antenna of graphene99* Maruoka Masato, Maeda Taisei, M. Shoufie Ukhtary, Saito Riichiro＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:00 )13:30-14:00 若手奨励賞候補審査優先時間
授賞式 ( 15:00-15:15 )
総会 ( 15:15-15:45 )特別講演 ( 15:45-16:15 )サステナブルモビリティのためのナノカーボン

2S-2

7

* 射場 英紀＞＞＞＞＞＞＞ 休憩 ( 16:15-16:30 ) ＜＜＜＜＜＜＜特別講演 ( 16:30-17:00 )2S-3
Mechanical and thermal-optical properties of chirality-defined single-walled carbon
nanotubes

8* 宮内 雄平
一般講演 ( 17:00-18:00 )原子層 ・ グラフェン生成 ・ フラーレンの応用 ・ フラーレンの化学
2-6On-surface synthesis of conjugated polycyclic nanowires by copolymerization strategy

28* Hironobu Hayashi, Hiroko Yamada
2-7

In Situ TEM study of catalytic property of Mo during graphene formation

29* Subash Sharma, Golap Kalita, Masaki Tanemura
2-8

有機薄膜太陽電池に対するフラーレン誘導体アクセプターの異性体効果30* 梅山 有和, 今堀 博
2-9フラーレンカチオンの合成における有用性とデバイス応用研究* 松尾 豊移動
懇親会 ( 18:30-20:30 )xii

31

９月 ５日 （木）特別講演
発表 ２５分 ・ 質疑応答 ５分
招待講演
発表 １０分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
特別講演 ( 9:00-9:30 )3S-1
Bioelectronic interface controlled by self-assembled peptides on two-dimensional nanomaterials 9* 早水 裕平
招待講演 ( 9:30-9:45 )Highly Uniform, Flexible Microelectrodes Based on the Clean Single-Walled Carbon
Nanotube Thin Film with High Electrochemical Activity

3I-1

11

* Xuan Viet Nguyen
一般講演 ( 9:45-10:30 )バイオ ・ その他
3-1

Self-Assembled Peptides as a Molecular Scaffold on CVD Grown Monolayer MoS2 Transistor
towards Biosensing* 野口 紘長, 早水 裕平

32

3-2

グラフェン量子ドットの高分解能移動度測定

33* 菅井 俊樹, 内山 史章, 大石 祐也, 仲安 貴紀, 佐々木 諒
3-3

A three-dimensional covalent network of fused pentagons: A hard carbon allotrope withnegative Poisson’s ratio34* 藤井 康丸, 丸山 実那, Nguyen Thanh Cuong, 岡田 晋＞＞＞＞＞＞＞ 休憩 ( 10:30-10:45 ) ＜＜＜＜＜＜＜特別講演 ( 10:45-11:15 )Physics of twisted 2D materials

3S-2

10

* 越野 幹人
一般講演 ( 11:15-11:30 )グラフェンの物性
3-4Edge plasmon in graphene ribbon

35* Muhammad Ukhtary, Maruoka Masato, Riichiro Saito
ポスタープレビュー ( 11:30-12:15 )（☆） 若手奨励賞候補
若手奨励賞候補3P-1
トリオン発光によるカーボンナノチューブ薄膜高速EL素子☆
* 高橋 英統, 鈴木 祐司, 中川 鉄馬, 牧 英之
3P-2☆

温度応答性ポリマーを用いた単層カーボンナノチューブの単一カイラリティ分離法* 志村 英里子, 菅井 俊樹, 桒原 彰太

xiii

100

101

９月 ５日 （木）3P-3

Optical Studies of Monolayer MoSe2 on Strongly Correlated Manganese Oxide☆

* Yan Zhang, Yutaka Moritomo, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda

3P-4

Nearly Isotropic and Large Critical Field from Three-Dimensional Networks of Anisotropic
Superconducting Flakes

☆
3P-5

☆
3P-6

☆

3P-7

☆

102

103

* 安藤 千里, 中西 勇介, 蒲 江, 高橋 統吾, 竹延 大志, 宮田 耕充
Work function modulation of transparent electrode for fabrication of WS2-based highly
transparent solar cell104

* Xing He, Yoshiki Yamaguchi, Toshiro Kaneko, Toshiaki Kato
Fabrication and evaluation of hBN-encapsulated Monolayer MoSe2 with CNT local gates

105* Takato Hotta, Haruna Nakajima, Taiki Inoue, Shohei Chiashi, Keiji Ueno, Kenji
Watanabe, Takashi Taniguchi, Shigeo Maruyama, Ryo Kitaura
グラフェンバイオセンサを用いた匂い分子の検出106* 本間 千柊, 野口 紘長, 磯林 厚伸, 杉崎 吉昭, 早水 裕平

3P-8

Efficient Production and Characterization of 1D Transition Metal Monochalcogenides Inside
Carbon Nanotubes☆

* Naoyuki Kanda, Yusuke Nakanishi, Dan Liu, Zheng Liu, Kazu Suenaga, David Tomanek,
Hisanori Shinohara

金属内包フラーレン
Li+@C60-フルオロ化テトラフェニルポルフィリン超分子

3P-9

107

108

* 三輪 和平, 青栁 忍, 上野 裕, 岡田 洋史, 河地 和彦, 笠間 泰彦
フラーレンの応用
3P-10
Catalytic activity for the reduction of 4-nitroaniline with nickel oxide nanoparticle[C60]fullerene nanowhisker composites

109* Jeong Won Ko, Sugyeong Jeon, Weon Bae Ko
ナノチューブの物性
Thermal transport study of molybdenum disulfide nanotubes by molecular dynamics
simulations

3P-11

110

* 久間 馨, 志賀 拓麿, 岡田 晋, 千足 昇平, 丸山 茂夫
3P-12

配列した金属型単層カーボンナノチューブ薄膜のホール効果

111* 堀内 加奈子, Ryotaro Okada, Hideki Kawai, Kan Ueji, Yohei Yomogida, Weilu Gao,
Junichiro Kono, Kazuhiro Yanagi
3P-13

単層カーボンナノチューブ薄膜におけるゼーベック係数の金属-半導体転移112* 吉田 朱里, 一ノ瀬 遥太, 福原 健吾, 上治 寛, 蓬田 陽平, 柳 和宏
3P-14

局所的にひずんだカーボンナノチューブの熱電特性に関する理論研究* 松本 圭一郎, 山本 貴博

xiv

113

９月 ５日 （木）3P-15

Long-term measurement of sheet conductance of CNT ink on papers

114* Nanami Yamazaki, Yoichiro Hashizume, Takahiro Yamamoto
ナノチューブの生成と精製
鉄ナノワイヤを内包したカーボンナノチューブの成長と磁気特性に及ぼすニッケル/アルミニ
ウム積層膜の効果

3P-16

115

* 岡 昌良, 佐藤 英樹, 藤原 裕司
3P-17

不連続なアルミナ担持層上におけるカーボンナノチューブ成長

116* 山下 大志, 渡辺 博道, 明石 孝也
3P-18

酸化タングステンナノワイヤのセレン化による二セレン化タングステンナノチューブの合成

117* 蓬田 陽平, 貝沼 佳希, 遠藤 尚彦, 宮田 耕充, 柳 和宏
ナノチューブの応用
3P-19
有機物内包カーボンナノチューブを用いた水溶液系二次電池

118* 山田 一太, 伊達 怜実, 細江 健斗, 田代 広祐, 石井 陽祐, 川崎 晋司
3P-20

燃料電池用白金系電極触媒の電気化学特性に対する単層カーボンナノチューブの効果

119* 岸田 和樹, 針谷 達, 滝川 浩史, 橋本 剛
3P-21

Self-powered wireless optical transmitter based on triboelectric generator with carbon
nanotube thin film120

* 松永 正広, 廣谷 潤, 岸本 茂, 大野 雄高
3P-22

Effect of surface oxidation of carbon nanotube electrodes in streaming potential-based
generators

121* 安藤 優月, 西 涼平, 岸本 茂, 大野 雄高
内包ナノチューブ
3P-23
Study on one-dimensional stacking structure of polycyclic aromatic hydrocarbon molecules
encapsulated in single-walled carbon nanotubes by molecular dynamics simulations Ⅱ

122* Ryo Nagai, Yosuke Kataoka, Hironori Ogata
バイオ
3P-24

Brighter Near-IR Emission of Single-Walled Carbon Nanotubes Modified with a CrossLinked Polymer Coating123* 永井 薫子, 湯田坂 雅子, 片浦 弘道, 藤ヶ谷 剛彦
グラフェン生成3P-25
グラフェンおよびボロンドープグラフェン成長における銅板表面依存性124

社本 麻理子, * 坂東 俊治
3P-26

2インチr面サファイア上の高均一単層グラフェンのCVD成長* 上田 悠貴, 山田 純平, 丸山 隆浩, 成塚 重弥

xv

125

９月 ５日 （木）グラフェンの応用
Preparation of IrO2 nanoparticles on CVD graphene by hydrothermal method

3P-27

126

* Shuhei Ogawa, Seiya Suzuki, Masanori Hara, Masamichi Yoshimura
3P-28

B, N-codoped Reduced Graphene Oxide as a Support for IrO2 as Active OER Electrocatalyst 127* Prerna Joshi, Rohit Yadav, Yuki Matsuoka, Masanori Hara, Masamichi Yoshimura
原子層
3P-29

Growth of single-crystalline MoS2 on 1D and 2D boron nitride systems

128* Taikou Murakami, Hayato Arai, Yongjia Zheng, Yang Qian, Taiki Inoue, Rong Xiang,
Shohei Chiashi, Shigeo Maruyama
3P-30

Deposition of MoS2 layer on GaN semiconductor for photoresponsive device application

129* Pradeep Desai, Ajinkya Ranade, Mandar Shinde, Bhagyashri Todankar, Masaki Tanemura,
Golap Kalita＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:00 )13:30-14:00 若手奨励賞候補審査優先時間
一般講演 ( 15:00-15:30 )グラフェンの物性
3-5Electronic structure of hexagonal covalent networks with structural imperfections: Flat bandengineering by atomic substitution and doping36* Susumu Okada, Mina Maruyama, Tomonari Mizoguchi, Yasuhiro Hatsugai
3-6

メーカーフリンジ法を用いた単層グラフェンにおける第三高調波発生の観測

37* 犬飼 大樹, 小山 剛史, 河原 憲治, 吾郷 浩樹, 岸田 英夫
招待講演 ( 15:30-15:45 )Position and momentum mapping of phonons and electronic excitations in graphenenanostructures in the electron microscope

3I-2

12

* Thomas Pichler
一般講演 ( 15:45-16:30 )ナノチューブの物性
3-7
修飾SWNTs量子ドットの設計とバンドギャップ制御

38* 紺野 優以, 前田 優, 黒田 清徳, 丹保 陽登, 村越 陽和, 山田 道夫, Zhao Pei, Zhao
Xiang, 永瀬 茂, 江原 正博
3-8

遷移金属ダイカルコゲナイドナノチューブの幾何構造と電子物性

39* 大島 駿太郎, 豊田 雅之, 斎藤 晋
3-9

局所化学修飾単層カーボンナノチューブの2点修飾ドープサイトの構造変化による発光波長変調* 白木 智丈, 余 博達, 新留 嘉彬, 藤ヶ谷 剛彦
xvi

40

September 3rd, Tue.
Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
Special Lecture ( 9:00-9:30 )Putting Carbon Nanotubes to Use as Industrial Materials-Research and Development of Carbon Nanotube at AIST since 1991
* Motoo Yumura

1S-1

1

General Lecture ( 9:30-10:30 )Applications of nanotubes ・ Formation and purification of nanotubes
1-1Supercapacitors with no capacitance decay at -50 ℃ enabled by aligned CNT bundles
connected with traversing CNTs
* Xiang Gao, Lingchang Li, Mengmeng Zhang, Don. N Futaba, Ming Xu

13

1-2

Design of Carbon Nanotube-based Non-precious Metal Electrocatalysts with High Performanceand Durability
Jin Nishida, Jun Yang, Shunsuke Uchimura, Jyunko Matsuda, * Naotoshi Nakashima

14

1-3

Separation of carbon nanotubes using multiscale hydrophobic interaction* Hiromichi Kataura, Mayumi Tsuzuki, Tomoko Sugita, Mariko Sugita, Guowei Wang,
Takeshi Tanaka

15

1-4

Aqueous two phase extraction of semiconducting single-wall carbon nanotubes withisomaltodextrin and thin-film-transistor applications* Haruka Omachi, Tomohiko Komuro, Kaisei Matsumoto, Minako Nakajima, Hikaru
Watanabe, Jun Hirotani, Yutaka Ohno, Hisanori Shinohara

16＞＞＞＞＞＞＞ Coffee Break ( 10:30-10:45 ) ＜＜＜＜＜＜＜Special Lecture ( 10:45-11:15 )Optical properties of nanotubes and two-dimensional materials by using circularly polarizedlight* Riichiro Saito

1S-2

2

General Lecture (11:15-11:30 )Properties of graphene
1-5
Non-Zero Wavevector Electronic Excitation of Graphene induced by Localized Surface
PlasmonJinjiang Zhang, Ruifeng Zhou, Hiro MInamimoto, * Kei Murakoshi

17

Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
1P-1
Time-resolved photoluminescence spectroscopy of epitaxial bilayer graphene on SiC☆
* Kensuke Saito, Tomonari Koishi, Jianfeng Bao, Wataru Norimatsu, Michiko Kusunoki,
Hideo Kishida, Takeshi Koyama

41

xvii

September 3rd, Tue.
Effects of CNT diameter on mechanical and electrical properties of aligned CNT/epoxy
composite* Yohei Tsuyuguchi, Kazuya Hosogi, Takayuki Nakano, Yoku Inoue

42

The effect of gas phase species on chirality selectivity between (6,4) and (6,5) single-walledcarbon nanotubes* Satoru Shiina, Takuya Shima, Bin Xu, Toshiro Kaneko, Toshiaki Kato

43

Wavelength modulation of near infrared photoluminescence from single-walled carbon
nanotubes functionalized with diarylethene derivatives* Yasuto Nakagawa, Tomohiro Shiraki, Tsuyohiko Fujigaya

44

1P-5
☆

Monolayer WS2 Light-Emitting Devices with micro-cavity* Tomohiro Ogura, Tomoyuki Yamada, Naoki Wada, Takahiko Endo, Kenichi Yamashita,
Yasumitsu Miyata, Jiang Pu, Taishi Takenobu

45

1P-6

46

☆

Restoring intrinsic optical properties of CVD-grown MoS2 monolayers and theirheterostructures* Kana Kojima, Hong En Lim, Zheng Liu, Wenjin Zhang, Takahiko Endo, Kenji Watanabe,
Takashi Taniguchi, Kazunari Matsuda, Yuhei Miyauchi, Yasumitsu Miyata, Tetsuki Saito,
Yusuke Nakanishi, Yu Kobayashi, Yutaka Maniwa

1P-7☆

Wide-range control of excitonic properties in monolayer WS2 by dielectric screening effect* Yuto Kajino, Kenichi Oto, Yasuhiro Yamada

47

1P-8

Growth of Transition-metal-dichalcogenide-based two-dimensional superstructures with Coldwalled Metal-Organic CVD* Satoshi Iida, Takato Hotta, Kenji Watanabe, Takashi Taniguchi, Hisanori Shinohara, Ryo
Kitaura48

Thickness dependence of CVD-grown h-BN on PL emission and Raman of monolayer MoS2
* Hiroki Honda, Daichi Tanaka, Yuki Uchida, Kenji Kawahara, Hiroki Ago

49

1P-2
☆
1P-3
☆
1P-4
☆

☆

1P-9
☆

Properties of nanotubes
1P-10
Charge-state investigation on metallic and semiconducting SWCNTs with various diameters* Yuki Kuwahara, Takeshi Saito

50

1P-11

Fabrication of large-area aligned films of single-wall carbon nanotubes using artificiallygrooved membrane filters* Atsuhiro Katagiri, Natsumi Komatsu, Junko Eda, Hitomi Okubo, Kanako Horiuchi, Kan
Ueji, Yohei Yomogida, Weilu Gao, Junichiro Kono, Kazuhiro Yanagi

1P-12

52
Thermophysical property of single-wall carbon nanotube thin film on Au electrodes by a timedomain thermoreflectance method* Yuya Matsuoka, Kan Ueji, Hiroyuki Matsuo, Yohei Yomogida, Takashi Yagi, Kazuhiro Yanagi

xviii

51

September 3rd, Tue.
1P-13

Effect of palladium nanoparticle decoration on thermoelectric peeformance of carbon nanotubes
with vacancy defects: first principles simulation* Nayu Araki, Takahiro Yamamoto

Formation and purification of nanotubes
Production of carbon nano-materials by the bipolar-pulsed arc-discharge method* Tetsu Mieno, Md Abul Kalam, Maria Kazi Hanium

1P-14

53

54

1P-15

Effect of ethanol gas flow on synthesis of single-walled carbon nanotube by a hot-wallchemical vapor deposition reactor using Ir catalysts* Ai Misaki, Tomoko Suzuki, Takahiro Maruyama

55

1P-16

Growth of dense SWCNT from iron oxide nanoparticles for spin-capable forest* Ryosuke Goto, Kento Tabata, Takayuki Nakano, Kazuhiko Takahashi, Yoku Inoue

56

1P-17

Sub-nanometer diameter SWCNT Growth by Alcohol catalytic CVD* Kamal P Sharma, Daiki Yamamoto, Aliza K. Sharma, Takahiro Maruyama

57

Applications of nanotubes
1P-18
Study of MWCNT/Cotton Composites and Development of Compact Load Cells* Md. Abdul Momin, Mohammad Jellur Rahman, Tetsu Mieno

58

1P-19

Study of Ion Adsorption Properties of Single-Walled Carbon Nanotubes by Electrochemical
Quartz Crystal Microbalance Method* Mikako Takahashi, Masato Tsutsui, Yu Takeuchi, Ayar Al zubaidi, Yosuke Ishii, Shinji
Kawasaki

59

1P-20

High temperature capacitor electrode properties of nanocarbon materials in ionic liquid
electrolytes* Nanami Asai, Yosuke Ishii, Shinji Kawasaki

60

1P-21

Catalytic properties of single-walled carbon nanotube /metal nanoparticles for CO2 reduction
reaction* Sae Ishikawa, Shunya Inayama, Kohei Kondo, Yusuke Watanabe, Yosuke Ishii, Shinji
Kawasaki

61

Endohedral nanotubes
1P-22
Precise carrier density control of SWCNTs by controlled filling of donner and accepter
molecules* Guowei Wang, Takeshi Tanaka, Atsushi Hirano, Hiromichi Kataura
Nanohorns
Novel Preparation Method of Carbon Nanobrushes using CO2 Laser Ablation* Ryota Yuge, Kiyohiko Toyama, Mayumi Kosaka, Hideyuki Sato

1P-23

xix

62

63

September 3rd, Tue.

1P-24

Properties of graphene
Topological phases in graphene nanoribbons* Mari Ohfuchi

64

Graphene synthesis
In situ XRD measurement of precipitation of multilayer graphene* Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka

65

1P-25

1P-26

Direct growth of multilayer graphene on SiO2/Si substrate by precipitation method using
nanodiamond ~Cooling rate dependence~* Tatsuya Kashio, Asato Nakashima, Daichi Yamamoto, Takahiro Maruyama, Shigeya
Naritsuka

Applications of graphene
Influence of the Au clusters at the graphene pore edge on the vibrational spectra of nucleotides
translocating through the pore
* Tatiana Zolotoukhna, Momoko Yamada

1P-27

1P-28

Co-Intercalation of Metal Chlorides in Large-Area Bilayer Graphene* Amane Motoyama, Kenji Kawahara, Rika Matsumoto, Hiroki Ago

Atomic Layers
Role of the Hall conductivity in the optical absorption of circularly polarized light* Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito

1P-29

1P-30

Electrostatic properties of positively charged graphene edges terminated by functional groups* Yanlin Gao, Susumu Okada

66

67

68

69

70

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:00 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Special Lecture ( 15:00-15:30 )Growth and structure of group 14 elemental 2D honeycomb structure* Junji Yuhara

1S-3

General Lecture ( 15:30-16:15 )Atomic Layers
1-6In-situ monitoring of monolayer WS2 growth* Tomoya Kameyama, Chao Li, Toshiro Kaneko, Toshiaki Kato

3

18

1-7

Growth of pentagonal and diamond shaped h-BN crystals* Kamal Prasad Sharma, Yuta Niimi, Aliza K. Sharma, Takahiro Maruyama

19

1-8

Carrier accumulation in bilayer MoS2 under a perpendicular electric field* Mina Maruyama, Susumu Okada

20xxSeptember 3rd, Tue.
＞＞＞＞＞＞＞ Coffee Break ( 16:15-16:30 ) ＜＜＜＜＜＜＜Special Lecture ( 16:30-17:30 )Growth of Transition Metal Dichalcogenide 2D Layers for Electronics* Lain-Jong Li

1S-4

１S-5

Nanocarbon-based flexible devices* Kuniharu Takei

5

General Lecture ( 17:30-18:00 )Atomic Layers ・ Applications of graphene
1-9
Room-Temperature Valley-Polarized Light-Emitting Devices via Strained Monolayer
Semiconductors* Jiang Pu, Hirofumi Matsuoka, Tomoyuki Yamada, Yu Koayashi, Yuhei Takaguchi,
Yasumitsu Miyata, Taishi Takenobu
1-10

4Interface dependent photoresponsivity in graphene/GaN heterojunction* Ajinkya Ranade, Rakesh Mahyavanshi, Pradeep Desai, Masaki Tanemura, Golap Kalita

xxi

21

22

September 4th, Wed.
Special Lecture: 25min (Presentation) + 5min (Discussion)Award Nominee Lecture: 10min (Presentation) + 10min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
General Lecture ( 9:00-10:25 )Lectures of Osawa Award and Iijima Award Nominees
2-1Construction and solid-state dynamics of molecular bearings composed of finite carbon
nanotube host and guest rotors* Taisuke Matsuno, Yusuke Nakai, Yutaka Maniwa, Masahiro Fujita, Kengo Fukunaga, Sota
Sato, Hiroyuki Isobe

23

2-2

Controlled Redox of Lithium-ion Endohedral Fullerene on Carbon Nanotubes for Efficient andStable Metal-free Perovskite Solar Cells* Il Jeon, Ahmed Shawky, Hiroshi Okada, Esko Kauppinen, Shigeo Maruyama, Yutaka Matsuo

24

2-3

Observation and Spectral Assignment of Family of Hexagonal Boron Nitride Lattice Defects* Daichi Kozawa, Ananth Govind Rajan, Jamie H. Warner, Daniel Blankschtein, Michael S.
Strano25

2-4

Designing two-dimensional tetradymites with 20% thermoelectric efficiency* Nguyen T. Hung, Ahmad R. T. Nugraha, Riichiro Saito

26＞＞＞＞＞＞＞ Coffee Break ( 10:25-10:45 ) ＜＜＜＜＜＜＜Special Lecture ( 10:45-11:15 )2S-1
Templated synthesis of nanomaterials with single-walled carbon nanotubes and their properties
Shohei Chiashi
General Lecture ( 11:15-11:30 )Properties of graphene
2-5Electronic Orbitals and Spin-Polarization at Graphene Edge Revealed by Field Emission and
Field Ion Microscopy* Saito Yahachi, Watanabe Yuhdai, Hoshino Tohru, Nakahara Hitoshi, Nagai Shigekazu,
Ikemizu Hiromu, Kunoh Kazuya, Hata Koichi
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
2P-1
Influence of capacitance on field intensity in nano-scale filed emitters☆
* Keita Funayama, Hiroya Tnaka, Jun Hirotani, Keiichi Shimaoka, Yutaka Ohno, Yukihiro
Tadokoro

xxii

6

27

71

September 4th, Wed.
2P-2

☆

2P-3

☆

2P-4

☆
2P-5

☆

2P-6

☆
2P-7

☆
2P-8

☆
2P-9

☆

Growth of single-walled carbon nanotubes on chemically etched graphene layers by cold-wall
CVD using Ir catalysts* Aliza Khaniya Sharma, Kamal P Sharma, Saeki Mayumi, Saida Takahiro, Naritsuka
Shigeya, Maruyama Takahiro

72

Control of high-harmonic generation in single-wall carbon nanotubes by gating* Hiroyuki Nishidome, Kohei Nagai, Kento Uchida, Yota Ichinose, Kengo Fukuhara, Junko
Eda, Hitomi Okubo, Yohei Yomogida, Koichiro Tanaka, Kazuhiro Yanagi

73

Photoluminescence study of graphene quantum dots esterified with benzyl alcohol and theirapplication to solar cells* Suzuka Tachi, Toshiki Sugai, Shota Kuwahara

74

Interface electroluminescence from WS2/WSe2 in-plane heterostructures* Naoki Wada, Jiang Pu, Wenjin Zhang, Zheng Liu, Hirofumi Matsuoka, Kazunari Matsuda,
Yusuke Nakanishi, Yuhei Miyauchi, Taishi Takenobu, Yasumitsu Miyata, Yutaka Maniwa

75

Simulating van der Waals Heteroepitaxy Using Classical Mechanical Approach* Mitsuhiro Okada, Yosuke Uchiyama, Tetsuo Shimizu, Toshitaka Kubo, Ryo Kitaura

76

Fabrication of transition metal dichalcogenide heterostructures using molecular beam epitaxy* Yuya Murai, Nanami Ichinose, Satoshi Yasuda, Ryo Kitaura

77

Machine-learning approach for predicting low temperature valley polarization landscapes in 2D
semiconductors* Kenya Tanaka, Kengo Hachiya, Wenjin Zhang, Kazunari Matsuda, Yuhei Miyauchi

78

Single-layer MoS2 nanogenerator for harvesting clean electric energy from dynamic motion ofliquid* Adha Sukma Aji, Ryohei Nishi, Hiroki Ago, Yutaka Ohno

79

2P-10

Fullerenes
Infrared Spectral Simulation of Isotopically Manipulated C60* Tomonari Wakabayashi, Takamasa Momose, Mario E. Fajardo

80

Chemistry of fullerenes
Synthesis of Benzothieno[60]fullerenes Using Fullerenyl Cation Intermediates* Yutaka Matsuo, Yun Yu, Xiao-Yu Yang, Hiroshi Ueno, Hiroshi Okada

81

2P-11

Properties of nanotubes
2P-12
Chirality dependence of the tensile strengths of carbon nanotubes* Akira Takakura, Kou Beppu, Taishi Nishihara, Akihito Fukui, Takahiro Kozeki, Takahiro
Namazu, Yuhei Miyauchi, Kenichiro Itami
2P-13

In-plane and out-of-plane thermal conductivity of single wall carbon nanotube buckypapers withselected electronic structure* Hiroyuki Matsuo, Kan Ueji, Yohei Yomogida, Takashi Yagi, Kazuhiro Yanagi
xxiii

82

83

September 4th, Wed.
2P-14

Solving the Thermoelectric Trade-Off Problem with Metallic Carbon Nanotubes* Yota Ichinose, Akari Yoshida, Kanako Horiuchi, Kengo Fukuhara, Natsumi Komatsu, Weilu
Gao, Yohei Yomogida, Manaho Matsubara, Takahiro Yamamoto, Junichiro Kono, Kazuhiro
Yanagi84

2P-15

Theoretical Study on Thermoelectric Properties of Nitrogen-Doped Carbon Nanotubes with
Various Diameters* Manaho Matsubara, Kenji Sasaoka, Takahiro Yamamoto

85

Formation and purification of nanotubes
Towards high yield growth of single-walled carbon nanotubes by alcohol catalytic CVD using
Pt catalyst* Daiki Yamamoto, Kamal Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama

2P-16

86

2P-17

Synthesis of vertically aligned single walled carbon nanotube by conventional cold-wall CVD
system using Ir catalysts* Mayumi Saeki, Kamal Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama

87

2P-18

Interaction between defective carbon nanotubes and surfactant molecules* Hideyuki Jippo, Mari Ohfuchi

88

2P-19

Growth, etching, and regrowth of individual single-walled carbon nanotubes: Isotope labelingstudy* Taiki Inoue, Bunsho Koyano, Shun Yamamoto, Keigo Otsuka, Rong Xiang, Shohei Chiashi,
Shigeo Maruyama

89

Applications of nanotubes
2P-20
Bright electroluminescence from air-suspended carbon nanotubes* Wataru Terashima, Hidenori Machiya, Keigo Otsuka, Akihiro Ishii, Yuichiro Kato
2P-21

Effect of electrode configuration on formation and elongation of carbon nanotube filaments bygas discharge breakdown* Masatoshi Hiromura, Soichiro Magata, Hideki Sato

Endohedral nanotubes
Encapsulation of C60Fx in SWCNTs and its properties* Tsuyoshi Hasegawa, Shunsuke Kondo, Shun Manabe, Kohei Kondo, Yosuke Ishii, Shinji
Kawasaki

90

91

2P-22

92

Nanohorns
Carbon nanobrushes-based gas sensor* Mayumi Kosaka, Ryota Yuge

93

2P-23

Applications of graphene
2P-24
Fabrication of superhydrophobic and superoleophilic sponge using graphene oxide and carbon
nanotubes* Yuki Morikuni, Masanori Hara, Masamichi Yoshimura
xxiv

94

September 4th, Wed.
2P-25

Zinc Oxide Nanoparticle Decorated on Nitrogen-Doped Graphene Sheet as Advanced
Supercapacitor Electrode* Rohit Yadav, Masanori Hara, Prerna Joshi, Masamichi Yoshimura

Nanowires
Enhancement of electric field by surface plasmon on hollow cylinder* Yuan Tian, Fenda Pratama, Muhammad Ukhtary, Riichiro Saito

2P-26

2P-27

Synthesis of vertically aligned CNTs and evaluation of yarn spinnability* Shinji Igimi, Morihiro Okada, Taiki Inoue, Shigeo Maruyama, Shohei Chiashi

Atomic Layers
2P-28
Laser-energy dependent helicity-changing Raman spectra of MoS2
* Tong Wang, Nguyen T. Hung, Ahmad R.T. Nugraha, Riichiro Saito
2P-29

Edge plasmon in rectangular antenna of graphene* Maruoka Masato, Maeda Taisei, M. Shoufie Ukhtary, Saito Riichiro

95

96

97

98

99

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:00 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Awards Ceremony ( 15:00-15:15 )Genaral Meeting ( 15:15-15:45 )Special Lecture ( 15:45-16:15 )Nano carbon for sustainable mobility* Hideki Iba

2S-2

7

＞＞＞＞＞＞＞ Coffee Break ( 16:15-16:30 ) ＜＜＜＜＜＜＜Special Lecture ( 16:30-17:00 )2S-3
Mechanical and thermal-optical properties of chirality-defined single-walled carbon nanotubes* Yuhei Miyauchi
General Lecture ( 17:00-18:00 )Atomic Layers ・ Graphene synthesis ・ Applications of fullerenes ・ Chemistry of fullerenes
2-6
On-surface synthesis of conjugated polycyclic nanowires by copolymerization strategy* Hironobu Hayashi, Hiroko Yamada
2-7

In Situ TEM study of catalytic property of Mo during graphene formation* Subash Sharma, Golap Kalita, Masaki Tanemura
xxv

8

28

29

September 4th, Wed.
2-8

Isomer effects of fullerene derivative acceptors on organic photovoltaic devices* Tomokazu Umeyama, Hiroshi Imahori

30

2-9

Synthetic Usefulness and Device Application Studies of Cationic Fullerenes* Yutaka Matsuo

31

MovingBanquet ( 18:30-20:30 )xxvi

September 5th, Thu.
Special Lecture: 25min (Presentation) + 5min (Discussion)
Invited Lecture: 10min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
Special Lecture ( 9:00-9:30 )3S-1
Bioelectronic interface controlled by self-assembled peptides on two-dimensional nanomaterials* Yuhei Hayamizu
Invited Lecture ( 9:30-9:45 )Highly Uniform, Flexible Microelectrodes Based on the Clean Single-Walled Carbon Nanotube
Thin Film with High Electrochemical Activity* Xuan Viet Nguyen

9

3I-1

11

General Lecture ( 9:45-10:30 )Bio ・ Other topics
3-1
Self-Assembled Peptides as a Molecular Scaffold on CVD Grown Monolayer MoS2 Transistor
towards Biosensing* Hironaga Noguchi, Yuhei Hayamizu

32

3-2

High-resolution Ion Mobility Measurement on Graphene Quantum Dots
* Toshiki Sugai, Fumiaki Uchiyama, Yuya Ooishi, Takanori Nakayasu, Ryo Sasaki

33

3-3

A three-dimensional covalent network of fused pentagons: A hard carbon allotrope withnegative Poisson’s ratio* Yasumaru Fujii, Mina Maruyama, Nguyen Thanh Cuong, Susumu Okada

34＞＞＞＞＞＞＞ Coffee Break ( 10:30-10:45 ) ＜＜＜＜＜＜＜Special Lecture ( 10:45-11:15 )Physics of twisted 2D materials* Mikito Koshino

3S-2

10

General Lecture ( 11:15-11:30 )Properties of graphene
3-4Edge plasmon in graphene ribbon* Muhammad Ukhtary, Maruoka Masato, Riichiro Saito
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
3P-1
Trion-based High-speed Electroluminescence Emitters with Carbon Nanotube Films☆
* Hidenori Takahashi, Yuji Suzuki, Kenta Nakagawa, Hideyuki Maki
3P-2☆

Single-chirality separation of single-walled carbon nanotubes with a thermoresponsive polymer* Eriko Shimura, Toshiki Sugai, Shota Kuwahara

xxvii

35

100

101

September 5th, Thu.
3P-3

☆
3P-4

☆

3P-5

☆
3P-6

☆

3P-7

☆
3P-8

☆

Optical Studies of Monolayer MoSe2 on Strongly Correlated Manganese Oxide* Yan Zhang, Yutaka Moritomo, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda

102

Nearly Isotropic and Large Critical Field from Three-Dimensional Networks of Anisotropic
Superconducting Flakes* Chisato Ando, Yusuke Nakanishi, Jiang Pu, Togo Takahashi, Taishi Takenobu, Yasumitsu
Miyata103

Work function modulation of transparent electrode for fabrication of WS2-based highly
transparent solar cell
* Xing He, Yoshiki Yamaguchi, Toshiro Kaneko, Toshiaki Kato

104

Fabrication and evaluation of hBN-encapsulated Monolayer MoSe2 with CNT local gates* Takato Hotta, Haruna Nakajima, Taiki Inoue, Shohei Chiashi, Keiji Ueno, Kenji Watanabe,
Takashi Taniguchi, Shigeo Maruyama, Ryo Kitaura

105

106
Detection of odor molecule wiith graphene biosensor* Honma Chisyu, Noguchi Hironaga, Isobayashi Atsunobu, Sugizaki Yoshiaki, Hayamizu Yuhei

Efficient Production and Characterization of 1D Transition Metal Monochalcogenides Inside
Carbon Nanotubes* Naoyuki Kanda, Yusuke Nakanishi, Dan Liu, Zheng Liu, Kazu Suenaga, David Tomanek,
Hisanori Shinohara

Endohedral metallofullerenes
Supramolecule of Li+@C60 and fluorinated tetraphenylporphyrin* Kazuhira Miwa, Shinobu Aoyagi, Hiroshi Ueno, Hiroshi Okada, Kazuhiko Kawachi,
Yasuhiko Kasama

107

3P-9

108

Applications of fullerenes
Catalytic activity for the reduction of 4-nitroaniline with nickel oxide nanoparticle[C60]fullerene nanowhisker composites* Jeong Won Ko, Sugyeong Jeon, Weon Bae Ko

109

3P-10

Properties of nanotubes
3P-11
Thermal transport study of molybdenum disulfide nanotubes by molecular dynamics simulations 110* Kaoru Hisama, Takuma Shiga, Susumu Okada, Shohei Chiashi, Shigeo Maruyama
3P-12

Hall Effect on Aligned Metallic Single-Wall Carbon Nanotube Thin Films* Kanako Horiuchi, Ryotaro Okada, Hideki Kawai, Kan Ueji, Yohei Yomogida, Weilu Gao,
Junichiro Kono, Kazuhiro Yanagi

3P-13

112
Transition from Metallic to Semiconducting behaviors in Seebeck coefficients of
Semiconducting Single-Wall Carbon Nanotube film.
* Akari Yoshida, Yota Ichinose, Kengo Fukuhara, Kan Ueji, Yohei Yomogida, Kazuhiro Yanagi

xxviii111September 5th, Thu.
3P-14

Theoretical Study on Thermoelectric Properties of Local Distorted Carbon Nanotube* Keiichiro Matsumoto, Takahiro Yamamoto

113

3P-15

Long-term measurement of sheet conductance of CNT ink on papers* Nanami Yamazaki, Yoichiro Hashizume, Takahiro Yamamoto

114

Formation and purification of nanotubes
Effect of nickel/aluminum bilayer film on growth and magnetic properties of carbon nanotubes
filled with iron nanowire* Masayoshi Oka, Hideki Sato, Yuji Fujiwara

3P-16

115

3P-17

Carbon nanotube growth on discontinuous alumina buffer layer* Taishi Yamashita, Hiromichi Watanabe, Takaya Akashi

116

3P-18

Synthesis of WSe2 nanotubes by selenization of tungsten oxide nanowires* Yohei Yomogida, Yoshiki Kainuma, Takahiko Endo, Yasumitsu Miyata, Kazuhiro Yanagi

117

Applications of nanotubes
3P-19
Aqueous electrolyte secondary batteries using organic molecules encapsulated in Single-walledcarbon nano tubes (SWCNTs)* Itta Yamada, Remi Date, Kento Hosoe, Kosuke Tashiro, Yosuke Ishii, Shinji Kawasaki

118

3P-20

Effect of single-walled carbon nanotubes on electrochemical properties of platinum-based
electrocatalyst for fuel cells* Kazuki Kishida, Toru Harigai, Hirofumi Takikawa, Takeshi Hashimoto

119

3P-21

Self-powered wireless optical transmitter based on triboelectric generator with carbon nanotube
thin film* Masahiro Matsunaga, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

120

3P-22

Effect of surface oxidation of carbon nanotube electrodes in streaming potential-based
generators* Yuzuki Ando, Ryohei Nishi, Shigeru Kishimoto, Yutaka Ohno

121

Endohedral nanotubes
Study on one-dimensional stacking structure of polycyclic aromatic hydrocarbon molecules
encapsulated in single-walled carbon nanotubes by molecular dynamics simulations Ⅱ* Ryo Nagai, Yosuke Kataoka, Hironori Ogata

3P-23

122

Bio
3P-24

Brighter Near-IR Emission of Single-Walled Carbon Nanotubes Modified with a Cross-Linked
Polymer Coating* Yukiko Nagai, Masako Yudasaka, Hiromichi Kataura, Tsuyohiko Fujigaya

123

Graphene synthesis
Dependence of surface roughness of Cu foil on the growth of pristine and boron doped graphene 124
Mariko Shamoto, * Shunji Bandow

3P-25

xxix

September 5th, Thu.
3P-26

Highly uniform single-layer graphene CVD on 2-inch r-plane sapphire* Yuki Ueda, Jumpei Yamada, Takahiro Maruyama, Shigeya Naritsuka

Applications of graphene
Preparation of IrO2 nanoparticles on CVD graphene by hydrothermal method* Shuhei Ogawa, Seiya Suzuki, Masanori Hara, Masamichi Yoshimura

3P-27

3P-28

B, N-codoped Reduced Graphene Oxide as a Support for IrO2 as Active OER Electrocatalyst* Prerna Joshi, Rohit Yadav, Yuki Matsuoka, Masanori Hara, Masamichi Yoshimura

Atomic Layers
3P-29
Growth of single-crystalline MoS2 on 1D and 2D boron nitride systems* Taikou Murakami, Hayato Arai, Yongjia Zheng, Yang Qian, Taiki Inoue, Rong Xiang,
Shohei Chiashi, Shigeo Maruyama
3P-30

Deposition of MoS2 layer on GaN semiconductor for photoresponsive device application* Pradeep Desai, Ajinkya Ranade, Mandar Shinde, Bhagyashri Todankar, Masaki Tanemura,
Golap Kalita

125

126

127

128

129

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:00 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

General Lecture (15:00-15:30 )Properties of graphene
3-5Electronic structure of hexagonal covalent networks with structural imperfections: Flat bandengineering by atomic substitution and doping* Susumu Okada, Mina Maruyama, Tomonari Mizoguchi, Yasuhiro Hatsugai
3-6

Observation of third-harmonic generation in single-layer graphene using Maker fringe method

36

37* Daiki Inukai, Takeshi Koyama, Kenji Kawahara, Hiroki Ago, Hideo Kishida
Invited Lecture ( 15:30-15:45 )Position and momentum mapping of phonons and electronic excitations in graphenenanostructures in the electron microscope* Thomas Pichler

3I-2

12

General Lecture ( 15:45-16:30 )Properties of nanotubes
3-7
Design and control of band gap of functionalized single-walled carbon nanotube quantum dots
* Yui Konno, Yutaka Maeda, Kiyonori Kuroda, Haruto Tambo, Hiyori Murakoshi, Michio
Yamada, Pei Zhao, Xiang Zhao, Shigeru Nagase, Masahiro Ehara

38

xxx

September 5th, Thu.
3-8

Geometries and electronic properties of transition metal dichalcogenide nanotubes* Shuntaro Oshima, Masayuki Toyoda, Susumu Saito

39

3-9

Two-point modification for doped site creation of locally functionalized single-walled carbon
nanotubes using bis-aryldiazonium salts* Tomohiro Shiraki, Boda Yu, Yoshiaki Niidome, Tsuyohiko Fujigaya

40

xxxi

特別講演Special Lecture

1S – 1 ～ 1S – 5
2S – 1 ～ 2S – 3
3S – 1 ～ 3S – 2

1S-1
Putting Carbon Nanotubes to Use as Industrial Materials-Research and Development of Carbon Nanotube at AIST since 1991
Motoo Yumura
CNT-Application Research Center, AIST (Japan)
1. Synthesis and Isolation of Multi Walled Carbon Nanotubes (MWCNT):(1991-2001)
First research on MWCNT was development of the isolation method of MWCNT from soot[1]. Then we started to develop Large Scale Synthesis method of MWCNT. We tried several
methods i.e. Arc discharge, Laser CVD, Catalytic CVD. On the end of 2000, we establishedvapor phase flow method which capable to produce 200g/h MWCNT.
2. Single Walled Carbon Nanotube (SWCNT) Mass Production：(2002-2010)
Due to the high cost from low yield production, industrial use of SWCNTs has not yet beenrealized despite their excellent properties. Industrial mass production technology is being
developed based on highly efficient "Super-Growth" (i.e. water-assisted chemical vapor
deposition) method [2] by combining large area with continuous process. On February 2011, apilot plant based was established (in AIST) with Nihon Zeon Corp. capable to produce 0.6 kg
of SWCNT per day. Improvement of eDIPS (enhanced Direct Injection Pyrolytic Synthesis)
method [3] was developed to control diameter of highly crystalline SWCNTs. As a result, thedevelopment of super-growth and eDIPS methods for mass production with low cost will
promote the development of the industrial use of SWCNTs in the near future.
3. Development of SWCNT Application:(2010-)
In August 2010, the 'Innovative Carbon Nanotubes and Their Applications Project' wasbegun which aims to develop applications utilizing the excellent properties of carbon nanotubes.
Research and development work of this project was assigned to Technology Research
Association for Single Wall Carbon Nanotubes (TASC), a consortium of five companies(Sumitomo Precision Products Co., Ltd., TEIJIN Ltd., Toray Industries, Inc., ZEON
Corporation, and NEC Corporation) and National Institute of Advanced Industrial Science(AIST). The goals of this project by 2017 are to promote the development of Single-Walled
Carbon Nanotubes (SWCNT) technology. More specifically, we aim to develop innovative
applications of SWCNTs synthesized by Super-Growth method and eDIPS methods, and tobuild up methods of separating [4] and dispersing SWCNTs. In addition, we are assessing thesafety and the management of nanotube materials [5]. Moreover, we promote R&D on ultralight, super-strength, high-performance materials for application development through theestablishing a new industry on Carbon Nanotube (CNT) composite materials.
[1] M.Yumura, S.Ohshima, K.Uchida, F.Ikzakai., Mat.Res.Soc.Sympo.Proc. Vol.349. 231 (1994)[2] K. Hata, D.Futaba et al., Science. 306, pp.1362 (2004)[3] T. Saito et al., Journal of Nanoscience and Nanotechnology, vol.8, pp.6153 (2008)[4] H. Kataura et al., Nano Lett. 9 pp.1497 (2009).
[5] J. Nakanishi et al., Executive Summaries of Interim Reports on Risk Assessments of Three Manufactured
Nanomaterials, Carbon Nanotubes (CNTs) (issued on October 16, 2009)
Corresponding Author: M. Yumura
Tel: +81-29-861-9417, Fax: +81-29-861-4551,
E-mail: m.yumura@aist.go.jp

–1–

1S-2
Optical properties of nanotubes and two-dimensional materials
by using circularly polarized light○Riichiro Saito
1

Department of physics, Tohoku University, Sendai 980-8578, Japan

We overview our recent works on optical properties by using circularly polarized light incarbon nanotubes and two-dimensional materials. Electric field of circularly polarized lightrotates as a function time, clockwise (left-handed, LH) or anti-clockwise (right-handed, RH)
when we observe the rotation from the propagating axis. The freedom of LH and RH is a“spin” of a photon which can be applied for doubling the information in optical signaltransmission or for interaction with the spin of electron. A photon of circularly polarized light
has an angular momentum of േℏ which we call helicity of the phonon. First we reportcircular dichroism (CD) of carbon nanotubes. CD is defined by the difference of opticalabsorption for LH and RH circularly polarized light, which can be used for assignment ofenantiomer of nanotubes. We will discuss how the CD is calculated [1] and observed [2] as afunction of chirality of carbon nanotubes. CD generally appears in two-dimensional materials,
too, which we discuss in connection with valley polarization or pseudo-spin polarization byusing so-called Haldane model [3] or modified Haldane model [4] that covers the
Hamiltonian of many two-dimensional materials such as graphene, h-BN etc. In the Raman
spectroscopy, we will discuss the origin of helicity-changing Raman spectra [5] and therelevant conservation law of angular momentum [6]. Finally, we will discuss surface plasmonof two-dimensional materials which is coupled with circularly polarized light [7]. This work
is supported JSPS KAKENHI No. JPB18H01810.
References:[1] N. Sato, Y. Tatsumi, R. Saito, Phys. Rev. B. 95, 155436 (2017).
[2] X. Wei, T. Tanaka, Y. Yomogida, N. Sato, R. Saito, H. Kataura, Nat. Comm. 7, 12899 (2016).
[3] K. Ghalamkari, Y. Tatsumi, R. Saito, J. Phys. Soc. Jpn., 87, 063708 (2018).
[4] M. Villa, N. T. Hung, S. Roche, R. Saito, Phys. Rev. B, 99, 161404 (2019).
[5] Y. Tatsumi, R. Saito, Phys. Rev. B 97, 115407 (2018).
[6] Y. Tatsumi, T. Kaneko, R. Saito, Phys. Rev. B, 97, 195444 (2018).
[7] M. S. Ukhtary, M. Maruoka, R. Saito, unpublished.
Corresponding Author: Riichiro Saito
Tel: +81-22-795-7754, Fax: +81-22-795-6447,
Web: http://flex.phys.tohoku.ac.jp/
E-mail: rsaito@flex.phys.tohoku.ac.jp

–2–

1S-3
Growth and structure of group 14 elemental 2D honeycomb structure
Junji Yuhara
Department of Energy Science and Engineering, Nagoya University, Nagoya 464-8601, JapanThe synthesis and characterization of post-graphene materials have been intensively studied
with the aim of utilizing novel two-dimensional (2D) properties. Most studies adopted
molecular beam epitaxy as a synthesis method of 2D materials grown on clean crystalline
surfaces. In my talk, I will talk on the epitaxial growth of (1) germanene, (2) stanene, and (3)plumbene by segregation and deposition methods.
(1) Germanene on Ag(111) thin film by segregation [1]: On annealing the specimen ofAg(111) thin film grown on Ge(111) in an ultra-high vacuum chamber, germanene has been
epitaxially prepared on the surface. Low-energy electron diffraction clearly showsincommensurate “(1.3×1.3)”R30° spots, corresponding to a lattice constant of 0.39 nm, in
perfect accord with close-up scanning tunneling microscopy (STM) images, which clearly
reveal an internal honeycomb arrangement with corresponding parameter and low bucklingwithin 0.01 nm. From the STM images, two types of protrusions, named hexagon and line, forma (7√7×7√7)R19.1° supercell with respect to Ag(111) with a super large periodicity of 5.35 nm.
(2) Stanene on Ag2Sn surface alloy by deposition [2]: The lattice parameters of Ag2Sn surface
alloy and free-standing stanene are close to each other. The Ag(111) easily react with Sn atoms
on annealing, while the Ag2Sn surface alloy is chemically inert against the Sn atoms. The Ag2Sn
surface alloy is physically and chemically ideal surface for epitaxial growth of stanene. We
have successfully prepared large area planar stanene on Ag2Sn surface alloy by Sn deposition,
supported by thorough density functional calculations.
(3) Plumbene on Pd1-xPbx(111) alloy surface by deposition and segregation [3]: The bulk
Pb-Pd system exists in fcc solid solution with concentration x up to 10 ~ 17 % for Pd1-xPbx
depending on the temperatures. No Pb atoms evaporate from the Pd(111) surface on annealing
up to 1000 °C, examined by Rutherford backscattering spectrometry. Instead, the Pb atoms
dissolve and segregate on the surface on annealing. Plumbene is epitaxially grown on
Pd1-xPbx(111) alloy surface. The surface exhibits in the STM images a unique morphology
resembling the famous Weaire-Phelan bubble structure of the Olympic “WaterCube” in Beijing.
[1] J. Yuhara, Y. Fujii, K. Nishino, N. Isobe, M. Nakatake, L.Xian, A.Rubio, G. Le Lay, 2D Mater. 5 (2018)
025002.
[2] J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, G. Le Lay, ACS Nano
12 (2018) 11632.
[3] J. Yuhara, B. He, N. Matsunami, M. Nakatake, G. Le Lay, Adv. Mater. (2019) 31 (2019) 1901017.
Corresponding Author: J. Yuhara
Tel: +81-52-789-3792, Fax: +81-52-789-3779
Web: http://yuhara.nucl.nagoya-u.ac.jp
E-mail: j-yuhara@energy.nagoya-u.ac.jp

–3–

1S-4
Growth of Transition Metal Dichalcogenide 2D Layers for Electronics
Lain-Jong (Lance) Li
King Abdullah University of Science and Technology (Saudi Arabia)
Our recent demonstration on vapor phase growth of transition metal dichalcogenide (TMD)
monolayers such as MoS2 and WSe2 has stimulated the related research areas. The growthmechanism and the orientation control of TMD 2D flakes will be first discussed. These 2D
monolayer building blocks can form atomic scaled p-n junctions for modern electronics either
through vertical stacking or lateral stitching. The electronic structures of the vertical stacks
are dominated by the stacking orientation and interlayer coupling strength. While the lateralp-n junction exhibits diode properties and a large strain at the junction region offering
tunability in electronic structures. The talk shall be ended by future research perspectives on
the possibility of using 2D layers for future electronics.

Short Bio
Dr. Lain-Jong (Lance) Li now serves as a Research Director in Corporate Research at Taiwan
Semiconductor Manufacturing Company (TSMC). He is also the adjunct professor at Univ. of
New South Wales (Sydney) and King Abdullah University of Science and Technology(KAUST). He received his BSc and an MSc in chemistry at National Taiwan University. He
obtained his PhD of condensed matter physics at Oxford University in 2006. He was an
Assistant professor in Nanyang Technological University Singapore (2006-2009). Since 2010,
he has become an Associate Professor at Academia Sinica Taiwan. He joined King Abdullah
University of Science and Technology in 2014 and became a full professor in 2016. His main
research interest focuses on fundamental studies of carbon and inorganic 2D materials, andlarge-scale growth of various 2D materials for electronic and energy applications. He is
recognized as the 2018 highly cited scholar (Clarivate) in Physics and Universal Scientific
Education and Research Network (USERN) 1% top scientist in 2017.

–4–

1S-5
Nanocarbon-based flexible devices○Kuniharu Takei1,21Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
2
JST PRESTO, Kawaguchi 332-0012, Japan

Flexible and stretchable electronics are now widely studied for a next class of electric
devices replaced from the silicon-based conventional inflexible devices. In particular,
multi-functional sensor sheets can contribute to the applications for Internet of Things (IoT).
For high performance and low power electronics, the method to form high quality active
materials on soft substrates is important to develop because single crystalline substrate like Si
wafer cannot be used for this flexible device.
To address this challenge, firstly, this talk introduces the transfer or deposition techniquesof inorganic nanomaterials as the active components onto flexible films. In particular, carbon
nanotube (CNT) networks and graphene are used to fabricate large-scale andhigh-performance transistors and sensors [1].
One of the main targets for the flexible electronics is to build the platform of wearable
healthcare device applications. For healthcare application, multiple vital and molecule
information such as pH, glucose levels are very important to monitor as well as activity
information. Furthermore, simultaneous multiple condition monitoring of physical andchemical information is a next class of wearable devices for convenient and safe human life.
To realize the multi-functional flexible sensor system, flexible physical and chemical sensor
sheets will be discussed [2-3]. After understanding the fundamental properties and mechanismof the flexible transistors and sensors, integrated device applications with several sensors on a
flexible film are demonstrated as proof-of-concepts for multi-functional sensor sheet
platforms.
Although a lot of researches and developments are still required for practical application,these studies may help to open a door for the next step of flexible electronics. In the next step,
the collaborative works between institute including university and industry are an importantrole to move forward to building a platform for flexible wearable healthcare applications.
Furthermore, stability and reliability of sensors in terms of sensitivity and long-timemeasurements should be studied to break the barrier toward the practical applications fromthe academic research into the market.
[1] M. Shiomi et al., ACS Nano, 13, 4771-4777 (2019).
[2] Y. Yamamoto et al., Sci. Adv., 2, e1601473 (2016).
[3] S. Nakata et al., Nat. Electron., 1, 596-603, (2018).
Corresponding Author: K. Takei
Tel: +81-72-254-9497,
Web: https://sites.google.com/site/kuniharutakeijp/
E-mail: takei@pe.osakafu-u.ac.jp

–5–

2S-1
Templated synthesis of nanomaterials with single-walled carbon nanotubes
and their properties○Shohei Chiashi
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

Single-walled carbon nanotubes (SWCNTs) are one of the nanomaterials that are
structurally controlled in atomic scale. SWCNT structure, such as chirality, diameter, length
etc. are diverse in nano-scale, and they can also be deformed in macro-scale due to highflexibility. As ideal SWCNTs consist of only six-membered rings of carbon atoms, they aremechanically strong and have chemically stable surfaces. Since the surface is chemicallyinactive even at high temperature, it is possible to synthesize new nano-materials whose
structure is controlled in nano- and micro-scale by using SWCNTs as template.
We succeeded in synthesizing boron nitride nanotube (BN-NT), multi-walled carbon
nanotube (MWCNT) and MoS2 nanotube (MoS2-NT) on the outer surface of SWCNTs[1]. By
supplying the precursor molecules to SWCNTs at high temperature, these nanotubes wereobtained as the additional layer through chemical vapor deposition process. It is thought thatthe precursor molecules and/or their decomposition products adsorbed on the outer surface of
SWCNTs and then the tube structure grew up. Although the tube-structure itself was stable,
their edge parts were unstable during the growth stage. While metal nano-particles are needed
as catalysts in the case of SWCNT growth, SWCNT surface played an important role in thestable growth of these nanotubes. On the other hand, when water molecules were supplied toopened-SWCNTs at lower temperature, ice-nanotubes were obtained inside SWCNTs[2]. The
inner space of SWCNT was the template in this case.
Here, with focusing the van der Waals interaction, the nanomaterial growth on SWCNTs
and their physical properties are reported. Based on the growth on atomic layered materials onflat surface, such as MoS2 flakes on h-BN, h-BN flakes on graphite, and so on, we will
discuss the growth mechanism of the 1D and 2D nano-materials.
[1] R. Xiang et al., arXiv:1807.06154.
[2] S. Chiashi, et al., ACS Nano 19, 1177 (2019).
Corresponding Author: S. Chiashi
Tel: +81-3-5841-6407, Fax: +81-3-5841-6408,
Web: http://www.photon.t.u-tokyo.ac.jp/~chiashi/
E-mail: chiashi@photon.t.u-tokyo.ac.jp

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2S-2
Nano carbon for sustainable mobility○Hideki Iba
Battery Research Div., Toyota Motor Corporation, Shizuoka 410-1193, Japan

Electrification of cars is important to reduce carbon dioxide emission and in achievementof sustainable mobility (Fig.1). Improvement of batteries is the biggest challenge toward
electrified vehicles. Innovative batteries such as all solid state battery or metal air battery
are expected as a promising candidate for next generation energy storage (Fig.2). The
recent progress and challenges of innovative batteries will be discussed. In addition, a few
examples of the application of nano carbon technologies will be shown as technical basis
for innovative batteries

Fig. 1 Plug in hybrid vehicle

Fig. 2 Road map on innovative batteries
Tel: +81-55-997-9540, Fax: +81-55-997-7879,
E-mail: hideki_iba@mail.toyota.co.jp

–7–

2S-3
Mechanical and thermal-optical properties of chirality-defined
single-walled carbon nanotubes○Yuhei Miyauchi 1,2
Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
Graduate School of Science, Nagoya University, Chikusa, Nagoya 464-8602, Japan1

2

Since the discovery of carbon nanotubes [1], fabrication of macroscopic materials withexceptional physical properties using them has attracted much attention for more than aquarter century. In particular, their ultrahigh theoretical tensile strength (> ~100 GPa) andthermal conductivity (> ~2000 W/m×K) have inspired the realization of unprecedentedly
strong structural materials and highly thermal conductive materials. Excitonic opticalresponses [2-7] of semiconducting single-walled carbon nanotubes (SWNTs) have also
attracted great interest because of their potential applications in near-infrared photonics.
However, these dreams of carbon nanotubes have not yet been realized as originally expected,
mainly due to difficulties in keeping the excellent intrinsic properties of individual SWNTs ina macroscopic aggregation composed of them. We will report our recent experimental results
on mechanical and thermal-optical properties of individual SWNTs with defined chirality, andwill discuss how to make the best use of their intrinsic properties in macroscopic applications.
First, we will discuss the measurements of the ultimate tensile strengths of chirality-defined
individual SWNTs [8]. We found that the ultimate tensile strengths of SWNTs depend on theirchiral structures, which clearly highlights the target nanotube structures that should besynthesized when attempting to fabricate the strongest structural materials [8]. Excitonic
thermal radiation of SWNTs [9] will also be discussed. Because of their large binding energy,
excitons in SWNTs are stable even at temperatures over 1000 K. This unique property enables
thermal generation of excitons in semiconducting SWNTs. Thermal exciton radiation spectraof individual semiconducting SWNTs showed very narrow spectral bandwidth at 1000-2000
K [9]; this thermal-optical property is promising for their macroscopic application inheat-to-light energy conversion devices necessary for efficient thermophotovoltaics.
[1] S. Iijima, Nature 354, 56 (1991).
[2] Y. Miyauchi*, J. Mater. Chem. C 1, 6499 (2013).
[3] Y. Miyauchi*, M. Iwamura, S. Mouri, T. Kawazoe, M. Ohtsu, and K. Matsuda, Nat. Photonics 7, 715 (2013).
[4] M. Iwamura, N. Akizuki, Y. Miyauchi*, K. Matsuda*, et al., ACS Nano 8, 11254 (2014).
[5] N. Akizuki, S. Aota, S. Mouri, K. Matsuda, and Y. Miyauchi*, Nat. Commun. 6, 8920 (2015).
[6] Y. Miyauchi*, T. Heinz*, et al., Phys. Rev. B 92, 205407 (2015).
[7] Y. Miyauchi*, S. Konabe*, et al., Nat. Commun. 9, 2598 (2018).
[8] A. Takakura, K. Beppu, T. Nishihara, A. Fukui, T. Kozeki, T. Namazu*, Y. Miyauchi*, and K. Itami*, Nat.
Commun., 10, 3040 (2019).
[9] T. Nishihara, A. Takakura, Y. Miyauchi*, and K. Itami*, Nat. Commun. 9, 3144 (2018).
Corresponding Author: Y. Miyauchi
Tel: +81-774-38-3463, E-mail: miyauchi@iae.kyoto-u.ac.jp

–8–

3S-1
Bioelectronic interface controlled by self-assembled peptides on
two-dimensional nanomaterials○Yuhei Hayamizu1
1

Department of Materials Science and Engineering, School of Materials and Chemical Technology,
Tokyo Institute of Technology, Tokyo 152-8550, Japan

Developing elegant hybrid systems of biological molecules on two-dimensional
nanomaterials, such as graphene, is a key in creating novel bio-nanoelectronic devices, whereversatile biological functions are integrated with electronics of nanomaterials. Biomolecules
self-assembling into organized structures on these nanomaterials offer a novel bottom-up
approach, where biomolecular architectures spatially govern the electronics of nanomaterials.
Despite the enormous potential in bridging nano- and bio-worlds at the molecular scale, nowork has yet realized a way to control electronic and/or optical properties of nanomaterials by
the biomolecular structures.
Our research target is the control of the interface between biotechnology andnanotechnology. More specifically, we employ solid binding peptides or artificially-designed
peptides [1-5], which have specific binding affinities to 2D
nanomaterials and an ability to form peptide nanostructures
on atomically flat surfaces. These peptides spontaneously
organize into coherent monolayer-thick nanostructures on
surfaces of graphene and other 2D nanomaterials with athickness of one layer of atoms. These peptides can work as amolecular scaffold for future biosensors using 2D
nanomaterials [4]. Furthermore, the organization of peptides
modify the electronic property of 2D nanomaterials spatiallybased on the nanostructures of self-assembled peptides [5].
On the other hand, the organization of peptides can be also
tuned by applied electrochemical potential on the 2D
nanomaterial [6]. In this talk, the details of peptide
designing for molecular scaffold and its experimental
characterizations will be discussed.
[1] C. R. So, Y. Hayamizu, H. Yazici, C. Gresswell, D. Khatayevich,
C. Tamerler, and M. Sarikaya, ACS Nano, 6 (2) (2012) 1648-1656.
[2] D. Khatayevich, C. R. So, Y. Hayamizu, Carolyn Gresswell, andMehmet Sarikaya, Langmuir, 28 (2012) 8589.
[3] D. Khatayevich, et al., Small 10.8 (2014): 1505-1513.
[4] P. Li, et.al., ACS Applied Materials & Interfaces 11, 20670(2019).
[5] Y. Hayamizu, et.al., Scientific Reports 6, Article number: 33778(2016).
[6] T. Seki, et.al., Langmuir 34(5), 1819-1826 (2018)
Corresponding Author: Y. Hayamizu
Tel and Fax: +81-03-5734-3651,
Web: http://www.op.titech.ac.jp/lab/hayamizu/index_e.html
E-mail: Hayamizu.y.aa@m.titech.ac.jp–9–Fig. 1: Atomic force microscope imageofself-assembled
peptidesongraphene (top), and molecular modelofself-assembled
peptidesongraphene (left).

3S-2
Physics of twisted 2D materials○Mikito Koshino1
1Department of Physics, Osaka University, Osaka 560-0043, Japan

When 2D materials having different periodicities are overlaid with each other, theinterference pattern of the lattice mismatch often leads to unusual electronic properties. For
instance, the twisted bilayer graphene (rotationally stacked graphene bilayer) exhibits
dramatic phenomena such as the flat band formation and emergent superconductivity. In thistalk, we introduce our recent theoretical works on incommensurate twisted bilayer systems
and their interesting physical properties. First we will discuss the twisted bilayer graphene,
where we introduce a theoretical framework to reduce its complex electronic structure into a
simple effective model. We then discuss the lattice relaxation and the phonon vibrations in thetwisted bilayer graphene. [2] There we show that the original linear dispersion of graphene’s
acoustic phonon is broken down into mini phonon bands separated by gaps, and thelow-energy phonon modes are regarded as collective vibrations of the AB/BA domain wall
network. Lastly we argue about the 30-degree twisted bilayer graphene, where the 12-foldquasicrystalline nature with nearly flat bands can be described in terms of the quasi-band
picture.[3][1] M. Koshino, N. F. Q. Yuan, T. Koretsune, M. Ochi, K. Kuroki, L. Fu, Phys. Rev. X 8, 031087 (2018).
[2] M. Koshino and Y.-W. Son, arXiv:1905.09660 (2019), to be published in PRB.
[3] P. Moon, M. Koshino and Y.-W. Son, Phys. Rev. B 99, 165430 (2019).
Corresponding Author: Mikito Koshino
Tel: +81-6-6850-5742
Web: http://qp.phys.sci.osaka-u.ac.jp
E-mail: koshino@phys.sci.osaka-u.ac.jp– 10 –

招待講演
Invited Lecture

3I–1 ～ 3I–2

3I-1Highly Uniform, Flexible Microelectrodes Based on the Clean SingleWalled Carbon Nanotube Thin Film with High Electrochemical Activity○Nguyen Xuan Viet1
1

Department of Chemistry, VNU University of Science, Hanoi, 19 Le Thanh Tong,
Hoan kiem district, Hanoi, Viet Nam.

Electrochemical sensors based on carbon nanotubes (CNTs) have great potential foruse in wearable or implantable biomedical sensor applications because of their excellent
mechanical flexibility and biocompatibility. However, the main challenge associated with
CNT-based sensors is their uniform and reproducible fabrication on the flexible plastic film.
Here, we introduce and demonstrate a highly reliable technique to fabricate flexible CNT
microelectrodes on a plastic film. The technique involves a process whereby the CNT film isformed by the dry transfer process based on the floating-catalyst chemical vapor deposition. An
oxide protection layer, which is used to cover the CNT thin film during the fabrication process,minimizes contamination of the surface. The fabricated flexible CNT microelectrodes show
almost ideal electrochemical characteristics for microelectrodes with the average value of thequartile potentials, ΔE = |E3/4 – E1/4|, being 60.4 ± 2.9 mV for the 28 electrodes, while the ideal
value of ΔE = 56.4 mV. The CNT microelectrodes also showed enhanced resistance to surface
fouling during dopamine oxidation in comparison to carbon fiber and gold microelectrodes; thedegradation of the oxidation current after 10 consecutive cycles were 1.8, 8.3, and 13.9% for
CNT, carbon fiber, and gold microelectrodes, respectively. The high-sensitivity detection of
dopamine is also demonstrated with differential-pulse voltammetry, with a resulting limit ofdetection of ∼50 nM. The reliability, uniformity, and sensitivity of the present CNT
microelectrodes provide a platform for flexible electrochemical sensors.

Corresponding Author: N.X Viet
Tel: +84-976-854-811
E-mail: vietnx@vnu.edu.vn– 11 –

3I-2
Position and momentum mapping of phonons and electronic excitations
in graphene nanostructures in the electron microscope○Thomas Pichler1,2, Ryosuke Senga2, Kazu Suenaga2, Shigeyuki Morishita3, Paolo Barone4,
Francesco Mauri5
1

Faculty of Physics, University of Vienna, Austria
Nanomaterials Research Institute, AIST, Tsukuba, Japan.
3
EM Research and Development Department, JEOL Ltd, Akishima, Japan
4
SPIN-CNR, c/o Università G. D’Annunzio, Chieti, Italy.
.5
Dipartimento di Fisica, Università di Roma La Sapienza, Roma, Italy.
2

Recent advances in improving the energy resolution in electron energy loss spectroscopy
inside a transmission electron microscope enables the application in different energy scales
ranging from the direct measurements of site selective core level spectroscopy, truly local andmomentum resolved valence band excitations down to the energy of phonon spectroscopy. Here
we ll present our new results on graphene nanostructures including (mono and few layer
graphene, graphene nanoribbons and carbon nanotubes) combining high-resolution EELS withhigh-resolution TEM. Regarding core level excitations well separated peaks are obtained froma single freestanding nanotube with the local chiral index and unambiguously related to the van
Hove singularities [1]. The local optical conductivity is directly determine the defect modulated
gap transition in semiconducting nanotubes and correlate it to the optical conductivity. This
allows for the first time to unravel the influence of an identified individual defect on the opticalproperties and directly probe e.g. their defect modulated exciton life time as crucial input for
optoelectronic applications [2]. Regarding momentum resolved valence band excitations, we
present new results on the interband plasmon dispersion of graphene monolayers. Last but notleast, for phonon spectroscopy we show how to overcome the previous limitations of TEMEELS to polar materials such as h-BN and regarding the momentum resolutiuon. Here, firstexamples on position and momentum mapping of phonons in apolar graphene nanostructures
will be given [3]. This provides a new pathway to determine the phonon dispersions down to
the scale of an individual freestanding graphene monolayer with nanometer size lateral
resolution by mapping the distinct vibrational modes for a large momentum transfer. The
measured scattering intensities are accurately reproduced and interpreted with density
functional perturbation theory. Additionally, a nanometer-scale mapping of selected momentum
resolved phonon modes using graphene nanoribbon structures allows to spatially disentanglebulk, edge and surface vibrations. Spatially resolved and momentum-resolved measurements
will in the future enable us to fully disentangle different vibrational modes and their momenta,
allowing phonon dispersion to be obtained even at interfaces and edges.
[1] R. Senga, T. Pichler, K. Suenaga, Electron Spectroscopy of Single Quantum Objects To Directly Correlate
the Local Structure to Their Electronic Transport and Optical Properties, Nanoletters, 16, 3661 (2016)[2] R. Senga, T. Pichler, Y. Yomogida, T. Tanaka, H. Kataura, K. Suenaga, Direct Proof of a Defect-Modulated
Gap Transition in Semiconducting Nanotubes, Nanoletters, 18, 3920 (2018)[3] R. Senga, K. Suenaga, P. Barone, S. Morishita, F. Mauri, T. Pichler. Position and momentum mapping ofvibrations in graphene nanostructures, Nature, in press (2019).
Corresponding Author: T. Pichler– 12 –

一般講演
General Lecture

1 – 1 ～ 1 – 10
2–1 ～ 2–9
3–1 ～ 3–9

1-1
Supercapacitors with no capacitance decay at -50 ℃ enabled by aligned
CNT bundles connected with traversing CNTs
○Xiang Gao1, Lingchang Li1, Mengmeng Zhang1, Don N. Futaba2, and Ming Xu1*
1

State Key Laboratory of Materials Processing and Die & Mold Technology, School of Materials
Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074,
China.
2
CNT-Application Research Center, National Institute of Industrial Science and Technology (AIST),
Tsukuba, 305-0044, Japan.

. Aligned CNT is a promising material in supercapacitor due to the well-ordered andultra-fast 1D electron transport. However, traditional aligned CNTs always encounter serious
shrinking in electrolytes due to the high specific surface area (SSA) and overcrowding [1],greatly limiting the accessibility of ion which is urged for the ultrahigh rate and low
temperature operation of supercapacitors [2-4]. To solve this problem, our strategy is todesign the hybrid architecture to realize the structural stability in electrolyte. Here, we
demonstrate supercapacitors where carbon nanotubes (CNTs) with aligned CNT bundles
connected with traversing CNTs are designed to provide high accessibility of ions as well as
exceptional structural stability. Traversing CNTs grow spontaneously with aligned CNTs,
supporting the aligned CNTs and acting as the lateral frames of the whole structure, which is
the key for their structural stability in electrolyte. Benefiting from the superiority of inter-tube
structure, supercapacitors with high capacitance retention of 89% from 10 mV/s to 500 mV/s
and no capacitance decay at -50 ℃ are realized. We finally obtain high power density of 40
kW/kg and high energy density of 43.1 Wh/kg at -50 ℃, surpassing most of thesupercapacitors at low temperature. We believe that our design of the CNT architecture could
provide a novel design principle for ultrahigh rate and low temperature supercapacitors.

Fig. 1 Power density and energy density comparison of the supercapacitors at low temperature.
[1] Futaba, D.N. et al. Nat Mater 5, 987-994 (2006).
[2] Salanne, M. et al. Nat. Energy 1, 16070 (2016).
[3] Lukatskaya, M.R. et al. Nat. Energy 2, 17105 (2017).
[4] Xia, X. et al. Energy Environ. Sci. 8, 1559-1568 (2015).
Corresponding Author: Ming Xu
Tel: +86-027-87557749
Web: https://www.nanocarbon-hust.cn/
E-mail: ming.xu@hust.edu.cn– 13 –

1-2
Design of Carbon Nanotube-based Non-precious Metal
Electrocatalysts with High Performance and Durability
Jin Nishida,1 Jun Yang,1 Shunsuke Uchimura,2 Junko Matsuda,3 Naotoshi Nakashima1
International Institute for Carbon Neutral-Energy Research (WPI-I2CNER), Kyushu
University, Fukuoka, Japan
2
Graduate School of Engineering, Kyushu University, Fukuoka, Japan
3
International Research Center for Hydrogen Energy, Kyushu University, Fukuoka, Japan
E-mail: nakashima.naotoshi.614@m.kyushu-u.ac.jp
1

In recent years, a sustainable and low-carbon emission energy chain has attracted muchattention. Toward the goal, the development of non-precious metal electrocatalysts for fuelcells, water splitting and batteries with high performance, durablity, and scalability is a strongsocial demand for the next-generation eco-friendly energy society[1].
In this meeting, we summarize our recent studies on i) seven different nanocarbons /ironphthalocyanine (II) hybrids with well-defined nanostructures that show excellent efficiency
and durability for oxygen reduction reaction[2,3], ii) decorating unoxidized-carbon nanotubes
with homogeneous Ni-Co-spinel nanocrystals that show superior performance for oxygen
evolution and oxygen reduction reactions[4], and iii) nanocarbon-Fe-Ni-based catalyst withhigh oxidation evolution reaction performance, in which we used several kinds of nanocarbon
including multi-walled carbon nanotubes and carbon black as a carbon support and compared
the performance of oxidation evolution reaction.
References[1] N. Nakashima (Editor), “Nanocarbons for Energy Conversion-Supramolecular
Approach-”, Springer, 2018, pp. 1-564.
[2] J. Yang, J. Tao, T. Isomura, H. Yanagi, I. Moriguchi, N. Nakashima, Carbon, 2019, 145,
565-571.
[3] J. Yang, F. Toshimitsu, T. Fujigaya, N. Nakashima, J. Mater. Chem. A, 2017, 5, 1184-1191[4] J. Yang, T. Fujigaya, N. Nakashima, Sci. Rep., 2017, 7, art.no.45384.

Corresponding Author: N. Nakashima
Tel: +81-92-802-6745, Fax: Tel: +81-92-802-6745, E-mail:nakashima.naotoshi.614@m.kyushu-u.ac.jp– 14 –

1-3
Separation of carbon nanotubes using multiscale hydrophobic interaction○Hiromichi Kataura, Mayumi Tsuzuki, Tomoko Sugita, Mariko Kubota, Guowei Wang,
Takeshi Tanaka
Nanomaterials research Institute, AIST, Tsukuba 305-8565, Japan

Adsorption chromatography is very useful for large scale metal/semiconductor
separation and structure sorting of single-wall carbon nanotubes (SWCNTs), where
polysaccharide gels are used as stationary phase. However, adsorption and desorption
mechanisms of SWCNTs have not been well understood to date. In this presentation, we will
give a model of adsorption mechanism of SWCNTs on the polysaccharide polymer. We havefabricated seven different allyl dextran gels by changing dextran concentrations and measured
their adsorption abilities. Power law dependence in the adsorption ability shows that effective
adsorption site is not nanoscale but mesoscopic scale. This finding tells us that we have toconsider the macroscopic hydrophobic interactions such as “wet-dry transition”. Wet-dry
transition is the evacuation of water between two face to face placed hydrophobic plates
dipped in water when the distance is short. In the case of SWCNT-gel system, the wet statemeans that SWCNT is covered with sufficient surfactants in water and dry state means that“bare” SWCNT is attached to polysaccharide polymer without surfactant molecules. Wet anddry states can be understood as metastable states where the total free energy of hydrogenbonding of surrounding water is minimized locally. Since the adsorption of surfactant is due
to hydrophobic interaction in microscopic scale, the wet and dry states can be understood as
multiscale hydrophobic interaction system. Therefore, hydrogen bonding system finallydecides whether dry or wet states are more stable. Since the number of adsorbing sodium
dodecyl sulfate to SWCNT is highly dependent on the band gap width of SWCNT due to its
charge transfer nature, semiconducting SWCNTs are selectively adsorbed to the gels by the
wet-dry transition. If we accept this adsorption model, furthermore, all the behavior based onhydrophobic interaction explains all of our experimental data and further contributed toautomatic separation of 20 single chirality species, where the hydrophobicity of surfactant is
the most important parameter for the chirality selective elution. Interestingly, we can separate
SWCNTs based on the other parameter using the same adsorption mechanisms.
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-861-2786,
Web: https://staff.aist.go.jp/h-kataura/index.html
E-mail: hkataura@aist.go.jp– 15 –

1-4
Aqueous two phase extraction of semiconducting single-wall carbon
nanotubes with isomaltodextrin and thin-film-transistor applications○Haruka Omachi1,2, Tomohiko Komuro1, Kaisei Matsumoto1, Minako Nakajima1, Hikaru
Watanabe5, Jun Hirotani3, Yutaka Ohno3,4, and Hisanori Shinohara1
1

Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya
464-8602, Japan
2
Research Center for Materials Science, 3 Department of Electronics, Graduate School ofEngineering, and 4 Institute of Materials and Systems for Sustainability, Nagoya University
5
Hayashibara Co., Ltd.
Semiconducting single-wall carbon nanotubes (s-SWCNTs) are promising materials forelectronic devices. However, because the conventional as-grown carbon nanotubes contain ca.
30 % metallic (m-) SWCNTs, separation is required to obtain high purity s-SWCNTs.
In this work, we developed a rapid and single-step aqueous two-phase (ATP) extraction ofhigh-purity s-SWCNTs using isomaltodextrin (IMD), which is a cost-effective polysaccharide
containing a much amount of α-1,6-glucosidic linkages [1]. The purity of s-SWCNT extract
reached at >98%, confirmed by both optical absorption and Raman spectroscopies. We also
succeeded to fabricate the high-dense and uniform film from the high-purity s-SWCNT
extract directly. The fabricated TFTs exhibited excellent on/off ratios, carrier mobility, andcurrent density.

Fig.1 (a) Absorption spectra of pristine dispersion and ATP-extracts (b) Transfer characteristics of thin film transistors using
extracted semiconducting CNT dispersion (channel length = 10 µm, Vds = –0.5 V).

[1] H. Omachi et al., Appl. Phys. Express in press.
Corresponding Author: Haruka Omachi, Hisanori Shinohara
Tel: +81-52-789-2482, Fax: +81-52-747-6442
E-mail: omachi@chem.nagoya-u.ac.jp, noris@nagoya-u.jp– 16 –

1-5
Non-Zero Wavevector Electronic Excitation of Graphene
induced by Localized Surface Plasmon
ZHANG Jinjiang1; ZHOU Ruifeng1, 2, MINAMIMOTO Hiro1; ○MURAKOSHI Kei1
1

Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido 060-0810, Japan
2
Institute for International Collaboration, Hokkaido University, JapanThe fascinating electrical and optical properties of graphene render it wide application inphotoelectronic devices. Its optical response and electronic interaction with substrate has been
well investigated with Raman spectroscopy [1]. In the surface-enhanced Raman spectroscopy(SERS), band intensities are enhanced and new features may emerge due to the localized surface
plasmon resonance (LSPR) of metal nanoparticles. In this work, the SERS spectra of monolayer
graphene were investigated under electrochemical potential control. The influences of LSPR
on the electronic excitation process in graphene were discussed.
Graphene was synthesized on Cu foil via chemical vapor deposition method and wastransferred onto ITO glass (Gr/ITO glass) with poly(methyl methacrylate). The as-transferredgraphene number of layer was confirmed to be single-layer and defect-free via the Raman
spectroscopy [2]. Au nano-dimers were fabricated onto Gr/ITO glass (Au/Gr/ITO glass) via
angle-resolved nano-sphere lithography method. The electrochemical Raman spectroscopy was
carried out with a three-electrode system and 785 nm laser was used to excite the LSPR.
Around 1600 cm−1, three sub-bands were observed in SERS of the single-layer defect-freegraphene, in contrast to the single G band in the normal Raman spectrum. Electrochemical
SERS showed that energy of one of the sub-bands shifts with potentials in a manner very similar
to the G band, while the other two sub-bands were not sensitive to potential change. Thus, thethree sub-bands can be assigned to the G band and two non-zero wavevector phonon modes, D’
and D’’. The visualization of the non-zero wavevector phonon modes in a defect-free graphene
is ascribed to the plasmon-induced non-vertical electronic
excitation . Furthermore, the SERS spectra differ from thenormal Raman spectra of graphene at both low and highdoping levels. At low doping level, the G phonon
renormalization was suppressed (Figure); at high doping
level, the quantum interference was smeared out. Thesefindings demonstrate the modification of photoexcitationby LSPR. The new photoexcitation pathways not onlychange the optical response of graphene, but also alter the Figure. Scheme of G phonon
electrochemical potentials of hot electrons and holes.
renormalization at localized plasmon[1] R. Zhou et al. ACS Omega, 3, 2322 (2018).
[2] S. Yasuda et al. ACS Appl. Mater. Interfaces, 9, 38992 (2017).

excitation
under
potential control.

electrochemical

Acknowledgements: This paper is resubmission as in the 55th FNTG symposium. The presentation was canceled
due to the problem caused by Hokkaido earthquake on Sep . 6, 2018. All of the authors deeply appreciate verykind help and encouragement from the member of FNTG.
Corresponding Author: MURAKOSHI Kei
Tel: +81-(0)11-706-2704, Fax: +81-(0)11-706-4810,
Web: http://wwwchem.sci.hokudai.ac.jp/pc/
E-mail: kei@sci.hokudai.ac.jp– 17 –

1-6In-situ monitoring of monolayer WS2 growth○Tomoya Kameyama1, Chao Li1, Toshiro Kaneko1, Toshiaki Kato1, 2
1Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Two dimensional (2D) materials have attracted intense attentions since they were discovered
because of the ultrathin thickness, high mechanical flexibility, and topical optoelectronic
properties [1, 2]. Nevertheless, graphene is difficult to be applied as practical applications forsemiconductor devices due to its non-bandgap structure. Transition metal dichalcogenide(TMD) is known as another kind of 2D materials, which possess thin thickness as similar as
graphene. TMD is expected to be applied on practical semiconductor devices because it has
tunable bandgap structure by controlling layer number and kinds of elements consisting TMD.
Furthermore, bright photoluminescence of TMD makes it promising candidate as criticalmaterials for next generation optoelectrical applications such as flexible transparent solar cells[3]. To fabricate the high performance optoelectrical devices, it is greatly important tosynthesize single crystal, monolayer, and large scale TMD [4]. Unfortunately, the uncertain
growth mechanism of TMD makes it
difficult to realize them.
In this study, to reveal the growthmechanism of monolayer WS2 (kind of
TMD), in-situ monitoring system has beendeveloped, which can directly observe thetime evolution of monolayer WS2 growth(Fig. 1). The plot of crystal size as afunction of growth time can be well-fitted
by theoretical formula known as a growthequation. Through this fitting analysis, theimportant physical factors such as
incubation time, growth rate, lifetime, andsaturated crystal size can be obtained. It isfound that the highest growth rate ofmonolayer TMD can be reached up to 15
m/s, which is about ten times higher thanthat of multi-layer TMD. The effects of Fig. 1 Optical microscope images of monolayer WS2
process parameters such as substrate obtained by in-situ monitoring for growth time at (a)temperatures and flow of carrier gas on 20 s, (b) 50 s, (c) 80 s, and (d) 120 s.
those growth parameters are also
investigated.
[1] T. Kato and T. Kaneko: ACS Nano 8 (2014) 12777.
[2] T. Kato and T. Kaneko: ACS Nano 10 (2016) 9687.
[3] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato: Scientific Reports 7 (2017) 11967.
[4] C. Li, Y. Yamaguchi, T. Kaneko, and T. Kato: Applied Physics Express 10 (2017) 075201.
Corresponding Author: T. Kameyama
Tel: +81-22-795-7046, Fax: +81-22-263-9225,
http://www.plasma.ecei.tohoku.ac.jp/
E-mail: tomoya.kameyama.r1@dc.tohoku.ac.jp– 18 –

1-7
Growth of pentagonal and diamond shaped h-BN crystals○ Kamal P Sharma1,2, Yuta Niimi1, Aliza K. Sharma1, Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
2

Nanomaterials Research Center, Meijo University, Nagoya 468-8502, Japan

Hexagonal boron nitride (h-BN), a structural analogue of graphene, is a wide band gap 2D
insulating layered material, consisting of alternating sp2–boned boron and nitrogen atoms [1].
It shows appealing properties such as thermally stable in air up to 800oC, chemical inertness,stable thermal conductivity and superior elastic properties, and hence has drawn the significant
attention as a promising material in frontier applications [2]. Although chemical vapor
deposition (CVD) technique has developed as the most scalable process to synthesize h-BN onvarious transition metals, due to the complexity in growth mechanism, single domain h-BN isstill limited to few micro meter scale [3, 4]. In this research, we study the growth kinetics of hBN via morphological transition of triangular shaped into various polygonal shaped crystals.
For h-BN crystals synthesis, bare Cu
foils were loaded into the horizontal
growth furnace and heated at 26 oC/minfrom room temperature to 1050 oC with
100 sccm Ar. After annealing the Cu foil
for 30 min with 100 sccm H2 (Method-A)
or 100sccm Ar (Method-B), ammonia
borate (AB) was evaporated with 100:2
mixtures of Ar and H2. 2 mg of AB was
heated for various growth interval and aretermed as Method- AA, BA, BB, BC, and BD
and the growth furnace was rapidly cooled

Fig. 1. OM images of h-BN crystals (white contrasted
triangular structures) synthesized by (a) Method-AA, (b)Method-BA for 100 min, (c) Method-BB, (d) Method-BC,and (e) Method-BD.

down to room temperature within 30 min. As synthesized h-BN crystals were analyzed by
optical microscopy (OM), Raman spectroscopy, FESEM, XPS, AFM.
Regular triangular shaped h-BN crystals (Figure 1(a)) grown in Method-AA changed into
truncated triangles (Figure 1(b)) obtained in Method-BA, it should be noted that only annealingof Cu in Ar was changed compared to former one. On decreasing the heating rate of AB,
hexagonal, pentagonal and diamond shaped h-BN crystals were synthesized with elapsed
growth time (Figure 1(c-e)) on decreasing the heating temperature of AB.
This work was supported in part by Private University Research Branding Project from the Ministry of
Education, Culture, Sports, Science and Technology (MEXT), Japan.
[1] Kim, K. K. et al., Nano Lett., 12, 161 (2012).
[2] Sun, J. et al., Chem. Soc. Rev. 47, 4242 (2018).
[3] Tay, R. Y. et al. Nanoscale 8, 2434 (2016).

[4] Sharma, K.P. et al., CrysEngComm. 20, 550 (2018).

Corresponding Author: Takahiro Maruyama
Email:takamaru@maijo-u.ac.jp– 19 –

1-8
Carrier accumulation in bilayer MoS2 under a perpendicular electric field○Mina Maruyama, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan

Transition metal dichalcogenides (TMDCs) are possible forms of atomic layer materials,
which consist of an atomic layer of transition metals and those of chalcogens, resulting in the
hexagonal network with the thickness of about 0.3 nm. The most of them are known to be
semiconductors, so that they are regarded as the emerging materials of thin and flexible
semiconducting devices. Because of their atomic layer structures, TMDCs can form van der
Waals (vdW) heterostructures which exhibit interesting variations in their electronic
structures depending on the electronic band structures of constituent layers. Accordingly,
asymmetric carrier accumulation occurs in the vdW heterostructure of MoS2 and WS2 [1]. In
the present work, we aim to investigate carrier accumulation in a bilayer MoS2 under theperpendicular electric field for providing theoretical insight into the bilayer TMDC
field-effect transistor (FET) with dual gate electrodes. All calculations are conducted using
the density functional theory with the effective screening medium method. The bilayer MoS2
is sandwiched by top and bottom gate electrodes simulated by effective screening medium.
Our calculation shows that the bilayer MoS2 exhibits asymmetric carrier accumulation
under the perpendicular electric field. Figure 1(a) shows charge density of the bilayer MoS2
under the electric field of 1 V/nm without excess carriers. The perpendicular field induces
polarization around the bottommost and the topmost atomic layers of the bilayer MoS2. Then,by injecting the electron 1013 e/cm2, the electron is primarily accommodated in the bottom
layer of MoS2 facing to the bottom gate electrode, while the hole is induced in the top layer,
resulting in p-n junction between the layers, owing to the band offset between layers causedby the field [Fig. 1(b)]. With increasing the electron density up to 1014 e/cm2, electron is
injected into both layers of MoS2 [Fig. 1(c)].

Figure 1: Accumulated carrier distribution in bilayer MoS2 under the field of 1 V/nm with excess electron
density of (a) 0, (b) 1013, and (c) 1014 e/cm2. Gray points denote the atomic position of MoS2.
[1] M. Maruyama and S. Okada, Appl. Phys. Express, 12, 075008 (2019).
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp– 20 –

1-9
Room-Temperature Valley-Polarized Light-Emitting Devices
via Strained Monolayer Semiconductors○Jiang Pu1, Hirofumi Matsuoka1, Tomoyuki Yamada1, Yu Koayashi2, Yuhei Takaguchi2
Yasumitsu Miyata2, and Taishi Takenobu1
1
2

Department of Applied Physics, Nagoya Univ., Nagoya 464-8603, Japan
Department of Physics, Tokyo Metropolitan Univ., Tokyo 192-0397, JapanThe valley contrasted electronic structure in monolayer transition metal dichalcogenides(TMDCs) provides unique optical functionalities, such us anomalous Hall effects andcircularly polarized light emission [1]. In particular, the electrical control of circularly
polarized light emission is one of the most desired device applications towardopto-valleytronics. Although several experimental demonstrations of chiral light-emitting
devices have been reported, they have mostly realized at low temperatures and/or required
high magnetic fields [2,3]. Therefore, the light-emitting devices that can control
valley-polarized electroluminescence (EL) at room temperature are significant challenge.
Interestingly, we recently found out that the local strains implanted inside CVD-grown TMDC
monolayers might serve as a key role to generate circular polarized EL nearly room
temperature. Moreover, the recent paper revealed the strain induced valley magnetizations in
MoS2, and that magnetization effects also obtained at room temperature [4]. On the basis ofthese observations, here, we try to realize the room-temperature valley-polarized
light-emitting devices by combining electrolyte-based structures with strained monolayers.
The monolayer WS2 and WSe2 flakes were grown on sapphire substrate via CVD process,followed by transferring them onto PEN substrates using solution-based transfer process.
After that, two Au electrodes were deposited on monolayer flakes, and then, the ion gels
which are gelation of ionic liquids were spin-coated to construct two-terminal light-emitting
structure (Fig 1a) [5]. The devices were set on the home-built bending stage withpolarization-resolved optical set-up. Figs 1b and 1c show the PL mapping of channel regionswith flat (Fig. 1b) and strained condition (Fig. 1c). We can notice obvious red-shifts were
occurred in the strained devices, corresponding to 1 % uniaxial strain induced in monolayer
flake. In the strained condition, we applied AC voltage to the devices to integrate EL intensity,and the chirality of EL (σ+ and σ-) was selectively
detected by controlling quarter-wave plate (Fig. 1d).
We observed EL polarizations (P = [σ+ - σ-]/[σ+ + σ-])up to 20 % at room temperature. Importantly, we canalso switch EL polarizations (P ~ -6 %) through byinversing the current direction (Fig. 1d). These results
demonstrated the electrical generation and control ofroom-temperature valley-polarized EL mediated bystrains, offering a new way for achieving practicalchiral light sources based on monolayer TMDCs.

[1] X. Xu, et al. Nat. Phys. 10, 343 (2014)[2] Y. J. Zhang, et al. Science 344, 725 (2014)[3] Y. Ye, et al. Nat. Nanotechnol. 11, 598 (2016)[4] J. Lee, et al. Nat. Mater. 16, 887 (2017)[5] J. Pu and T. Takenobu Adv. Mater. 30, 1707627 (2018)
Corresponding Author: J. Pu, T. Takenobu
E-mail: jiang.pu@ngoya-u.jp, takenobu@nagoya-u.jp
Tel/Fax: +81-52-789-5165– 21 –

1-10
Interface dependent photoresponsivity in graphene/GaN heterojunction○Ajinkya K. Ranade1*, Rakesh Mahyavanshi1, Pradeep Desai1, Masaki Tanemura1, Golap
Kalita1,2*
Department of Physical Science and Engineering, Nagoya Institute of Technology,

1

Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
Frontier Research Institute for Material Science, Nagoya Institute of Technology,

2

Nagoya, Japan

Two-dimensional (2D) graphene has been integrated with group III-nitride compound
semiconductors notably gallium nitride (GaN), which is a wide band gap semiconductor (3.4eV) to form a Schottky junction. Here, we report on the interface dependent photoresponsivity
in graphene/GaN heterojunction. Graphene synthesized by low pressure chemical vapor
deposition technique was transferred onto n-type GaN substrate by wet transfer procedure. The
fabricated graphene/GaN heterojunction showed electrical hysteresis in dark condition which
was enhanced in UV light illumination. A second device fabricated with much cleaner
transferred graphene which was free from electrical hysteresis in no illumination condition(dark), showed hysteresis with the illumination of ultraviolet (UV) light. Moreover, thephotoresponsivity of 1.4 A/W was obtained for this device which is much higher than otherreported values for graphene/GaN heterojunctions. The residual impurities at the interface ofjunction and surface defects of GaN act as trap sites for photocarriers as a result interface
dependent photoresponsivity is observed. Our findings can be significant in understanding thehighly sensitive graphene/GaN and other 2D/3D heterojunction interfaces by characterization
under UV illumination for developing high performance devices.

Figure 1. J-V characteristics (a) device with residual impurities showing electrical hysteresis in both dark
conditions and UV illumination. (b) device showing electrical hysteresis only under UV light illumination.
[1] G. Kalita, M. D. Shaarin, B. Paudel, R. Mahyavanshi, M. Tanemura, Appl. Phys. Lett. 2017, 111, 013504.
Corresponding Author: Ajinkya K. Ranade, Golap Kalita
Tel: +81-527355216
E-mail: ajinkyaranade3@gmail.com , kalita.golap@nitech.ac.jp– 22 –

2-1
Construction and solid-state dynamics of molecular bearings
composed of finite carbon nanotube host and guest rotors○Taisuke Matsuno1, Yusuke Nakai2, Yutaka Maniwa2, Masahiro Fujita3,
Kengo Fukunaga1, Sota Sato1, Hiroyuki Isobe1
1

Department of Chemistry, The University of Tokyo and JST ERATO, Tokyo 113-0033, Japan2
Department of Physics, Tokyo Metropolitan University, Tokyo 980-8578, Japan3
Department of Chemistry, Tohoku University, Aoba-ku, Sendai 980-8577, Japan

Dynamics of molecules in solid holds promise for connecting molecular behaviors
with properties of bulk materials. However, controlling molecular motions in solid ischallenging task due to the presence of severe friction between neighboring molecules.
Recently, we have synthesized a chemically defined finite carbon nanotube,[4]cyclochrysenylene ([4]CC, Figure 1) [1], and found that [4]CC serves as a host for guest
rotors to construct "molecular bearing", which is characterized by a set of contradictory
properties: a tight binding and free rotation of rotors. In this study, we have constructed andrevealed the dynamics of two molecular bearings (Figure 1). One is the "ball-in-tube" bearing
possessing ball-shaped rotor C60. The solid-state rotational dynamics of C60 in [4]CC was
analyzed by solid-state 13C NMR. Surprisingly, the rotation reaches the inertial regime at 335
K [2]. The second is "bowl-in-tube" bearing possessing a bowl-shaped rotor, corannulene(COR) [3]. 2H NMR analysis revealed the fast single-axis rotation of the bowl-shaped rotors
in solid. These unique dynamic supramolecular systems provided new design principles of thesolid-state molecular machineries with smooth curved-π interfaces.

Fig 1. Construction of supramolecular hydrocarbon bearings [4]CCÉC60 and [4]CCÉCOR.
[1] S. Hitosugi, W. Nakanishi, T. Yamasaki, H. Isobe, Nat. Commun. 2011, 2, 492.
[2] T, Matsuno, Y. Nakai, S. Sato, Y. Maniwa, H. Isobe, Nat Commun. 2018, 9, 1907.
[3] T. Matsuno, M. Fujita, K. Fukunaga, S. Sato, H. Isobe, Nat. Commun. 2018, 9, 3779.
Corresponding Author: H. Isobe
Tel: +81-(0)3-5481-4777, Fax: +81-(0)3-5841-4162
Web: http://www.chem.s.u-tokyo.ac.jp/users/physorg/
E-mail: isobe@chem.s.u-tokyo.ac.jp– 23 –

2-2– 24 –

2-3– 25 –

2-4
Designing two-dimensional tetradymites with 20% thermoelectric efficiency○ Nguyen T. Hung1, Ahmad R. T. Nugraha2, Riichiro Saito2
1
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai
980-8578, Japan2
Department of Physics, Tohoku University, Sendai 980-8578, Japan

Thermoelectric (TE) research has beensignificantly activated during the past two
decades by the quantum confinement effect,a characteristic of low-dimensional (1D &2D) materials, thanks to the pioneering
work by Hicks and Dresselhaus [1]. In
particular, for two-dimensional (2D)
material, the TE efficiency is enhanced
only when the thickness of the material issmaller than the thermal de Broglie
wavelength [2]. Monolayer semiconductors Figure 1: Two-dimensional tetradymites (Bi2Te2Se) with
ZT = 2 at 500K.
naturally satisfy such a condition so thatthey are a good candidate for thermoelectricity. However, the TE efficiency still smaller than
10% (or figure-of-merit ZT ~ 1), which needs to be improved for industrial applications. In
this work, we theoretically investigate thermoelectric efficiency of the 2D tetradymites M2X3
(M=Bi, Sb; X=Te, Se, S). By using the density functional theory (DFT) to calculate transport
properties with considering both electron-phonon and phonon-phonon interactions, we findthat the nonparabolic Kane bands and large anharmonicity could lead to better thermoelectricperformance of the 2D tetradymites [3]. Moreover, we show that ZT of 2D Bi2Te2Se can up to
2 at 500K, which is higher than that of bulk tetradymites [4]. In other words, we can archive
the TE efficiency up to 20% in 2D tetradymites at near room temperature.
[1] L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 12727 and 16631(R) (1993).
[2] N. T. Hung et al., Phys. Rev. Lett. 117, 036602 (2016).
[3] N. T. Hung et al., Nano Energy 58, 743 (2019).
[4] J. P. Heremans et al., Nature Rev. Mater. 2, 17049 (2017).
Corresponding Author: Nguyen Tuan Hung
Tel: +81-22-795-6442, Fax: +81-22-795-6447, E-mail: nguyen@flex.phys.tohoku.ac.jp– 26 –

2-5
Electronic Orbitals and Spin-Polarization at Graphene Edge Revealed byField Emission and Field Ion Microscopy
12
2
2○Yahachi Saito , Yuhdai Watanabe , Tohru Hoshino , Hitoshi Nakahara ,3
3
3
3

Shigekazu Nagai , Hiromu Ikemizu , Kazuya Kunoh , Koichi Hata

1

Toyota Physical and Chemical Research Institute, Nagakute 480-1192, Japan
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan3
Department of Electrical & Electronic Engineering, Mie University, Tsu 514-8507, Japan
2

Electronic states at graphene edges exhibit peculiar properties, e.g., spin polarization at
zigzag edge [1]. Field emission microscopy (FEM) of open graphene edges shows a striped
pattern (“lip pattern”), reflecting the symmetry of π orbitals at a graphene edge [2]. Field ion
microscopy (FIM), complementary to FEM, shows unoccupied π orbitals with higher spatial
resolution. We also tried to measure spin-polarization of field-emitted electrons andobtained for the first time an evidence of the spin polarized states at edge of graphene.
Typical FEM and FIM images of a graphene emitter are shown in Figs. 1 (a) and (b),respectively. The FEM image (Fig. 1 (a)) exhibits a “lip pattern” characteristic to a grapheneedge; an array of streaked double spots. The corresponding FIM image (Fig. 1 (b)), takenusing Ne as imaging gas, reveals more detailed structures because of higher spatial resolution.
Arrays of paired spots, being split on bothside of a graphene plane, are observed asindicated by arrows.
Based on ourprevious studies on FIM of carbon emitters[3], the spacing between adjacent streaks
in FIM is presumed to correspond withinteratomic distances at the graphene edge.
Double spots are considered to be formed
by Ne atoms ionized in proximate to an
Fig. 1. (a) FEM and (b) FIM images of graphene.
unoccupied π*-orbital at the edge.
Spin polarization measurements of field-emitted
from graphene edges were measured by the Mott spinpolarization analyzer [4]. The magnitude of spinpolarization of 20 to 60%, depending on graphene
emitters was obtained. The present result is the first
demonstration of spin polarization of electrons atgraphene edges by using field emission method.
Abrupt changes in the spin polarization as a function oftime, as shown in Fig. 2, may result from theadsorption of residual gas such as hydrogen in the UHV
Fig.2. Spin polarizaton of field-emttedchamber.
electrons from a graphene edge.
[1] M. Fujita, K. Wakabayashi, K. Nakada and K. Kusakabe, J.
Phys. Soc. Jpn. 65 (1996) 1920. [2] N. Yokoyama et al., Surf. Interface Anal. 48 (2016) 1217. [3] Y. Saito, R.
Mizushima and K. Hata, Surface Sci. Lett. 499, (2002) L119. [4] S. Nagai, H. Sakakibara, K. Hata, M. Okada
and H. Mimura, Ultramicroscopy 111 (2011) 405.

Corresponding Author: Y. Saito
Tel: +81- 561-57-9616, Fax: +81- 561-63-6302, E-mail: ysaito@toyotariken.jp– 27 –

2-6
On-surface synthesis of conjugated polycyclic nanowires bycopolymerization strategy○Hironobu Hayashi, Hiroko Yamada
Division of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5, Takayamacho, Ikoma, Nara 630-0192, Japan

Polycyclic aromatic hydrocarbons such as large acenes have gained great attention due totheir potential as good building blocks for organic semiconductors. So far, by using a precursor
method1 and on-surface synthesis under ultrahigh vacuum (UHV) conditions, we havesuccessfully synthesized heptacene and nonacene on Au(111) to provide experimental insight
into the chemical and electronic structure.2 In addition, we also reported the on-surface
formation of heptacene organometallic complexes on Au(111) via a selective two-step
activation of an a-diketone-type heptacene precursor.3 However, due to the steric hindrance
between the hydrogen atoms, further annealing did not give rise to aryl-aryl coupling between
heptacene. Here, we havedemonstrated a strategy
for the aryl-aryl couplingof molecular building
blocks unable to undergo
homocoupling
intoextended architectures.
Briefly,a
copolymerization
approach using suitablelinkers allowed the onsurface synthesis ofcovalently linked chains Figure 1. Reaction pathway of copolymerization and laplace-filtered constantwith alternating building height frequency-shift nc-AFM image of an acene fused conjugated polycyclic
blocks, which were nanowire. Acknowledgement: Dr. Urgel, J. I. and Prof. Fasel, R.@Empa.
converted into fully
conjugated polycyclic nanowires by further annealing (Figure 1).4
[1] Yamada, H.; Yamashita, Y.; Kikuchi, M.; Watanabe, H.; Okujima, T.; Uno, H.; Ogawa, T.; Ohara, K.; Ono,
N. Chem.–Eur. J. 2005, 11, 6212.
[2] Urgel, J. I.; Mishra, S.; Hayashi, H.; Wilhelm, J.; Pignedoli, C. A.; Giovannantonio, M. D.; Widmer, R.;
Yamashita, M.; Hieda, N.; Ruffieux, P.; Yamada, H.; Fasel, R. Nat. Commun. 2019, 10, 861.
[3] Urgel, J. I.; Hayashi, H.; Giovannantonio, M. D.; Pignedoli, C. A.; Mishra, S.; Deniz, O.; Yamashita, M.; Dienel,
T.; Ruffieux, P.; Yamada, H.; Roman, F. J. Am. Chem. Soc. 2017, 139, 11658.
[4] Giovannantonio, M. D.; Urgel, J. I.; Gandus, G.; Chen, Q.; Liu, X.; Hayashi, H.; Ruffieux, P.; Decurtins, S.;
Narita, A.; Passerone, D.; Yamada, H.; Liu, S.; Müllen, K.; Pignedoli, C. A.; Fasel, R. ChemPhysChem 2019, inpress.
Corresponding Author: H. Hayashi
Tel: +81-743-72-6136, Fax: +81-743-72-6042,
Web: https://mswebs.naist.jp/LABs/env_photo_greenmat/
E-mail: hhayashi@ms.naist.jp– 28 –

2-7
In Situ TEM study of catalytic property of Mo during graphene formation○

Subash Sharma, Golap Kalita, Masaki Tanemura

Department of Physical Science and Engineering, Nagoya Institute of Tech., Nagoya 464-8555, Japan

Graphene has been a topic of keen research interest due to its excellent electrical and material
properties [1]. Cu and Ni are commonly used substrate for synthesis of high quality graphene.
Among different metals, catalytic role of Mo during graphene formation is least studied. In thiswork, we study Joule heat induced graphene formation inside transmission electron microscope(TEM) with real time observation Mo-C interaction and change in electrical property during
graphitization.
Mo included amorphous carbon nano-fiber (Mo-CNF) was used as starting material. MoCNF was fabricated using our previously reported method [2]. Bias voltage was applied to thetip of Mo-CNF. During application of voltage, joule heat comes in to play causing melting ofembedded Mo and its voltage driven electromigration. During electromigration of Mo,
amorphous CNF changes to graphitic form as shown in Figure 1(a-h). Figure 1(i-k) show thatas synthesized graphene is crystalline with no presence of amorphous carbon. Simultaneouselectrical measurement taken during transformation of CNF to graphene shows sudden increasein current during electromigration indicating graphene formation as shown in Figure 1(l). In
summary, we demonstrated that Mo can act as an efficient catalyst for graphene synthesis andcan be explored for large area graphene synthesis.

Figure 1. (a-k) Screenshots taken from in-situ TEM video showing transformation Mo-CNF to graphene underapplication of bias voltage at different time interval. (l) Corresponding IV curve showing change in electricalproperty of Mo-CNF during electromigration and graphitization of Mo-CNF.
[1] Novoselov et al. Science 306, no. 5696 (2004): 666-669.
[2] Sharma et al. Carbon 132 (2018): 165-171.
Corresponding Author: S. Sharma
Tel: +81-52-735-5379, Fax: +81-52-735-5379,
Web: http://tane-lab.web.nitech.ac.jp
E-mail: sharma.subash@nitech.ac.jp– 29 –

2-8
Isomer effects of fullerene derivative acceptors on organic photovoltaic
devices○Tomokazu Umeyama1, Hiroshi Imahori1,2
1

Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto
615-8510, Japan
2
Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Kyoto 606-8501,
Japan

In recent years, [70]fullerene derivatives are preferentially employed in organic photovoltaic(OPV) devices compared with [60]fullerene derivatives. However, an important aspect of C70
derivatives, which is usually overlooked in photovoltaic applications, is that as-prepared C70
mono-adducts consist of regioisomers due to the lower symmetry of rugby-ball shaped C70 overspherical C60. As contrasted with C60, C70 has four distinct types of [6,6]-bonds (α-, β-, ε-, andκ-type bonds), and thereby [70]fullerene derivatives including [70]PCBM have been used as aregioisomer mixture in OPV devices.
In this study, by using ahigh-performance liquid
chromatography (HPLC)
suitable for the separationof fullerenes, we separated
as-purchased [70]PCBM(denotedasmix[70]PCBM)
into
isomerically pure ones andinvestigated the isomer
separation effects on thephotovoltaic
properties(Figure 1) [1]. For
Figure 1. Isomer separations of [70]PCBM.
instance, in combination
with a high-performance conjugated polymer donor (PffBT4T-2OD), one of the diastereomersof the β-isomer (β1-[70]PCBM) showed an extraordinary cohesion nature in the blend film,
deteriorating the OPV device performance (0.4%). OPV devices based on the other isomers, i.e.
α-[70]PCBM (8.4%) and β2-[70]PCBM (8.4%), rival or slightly surpass the device with the assynthesized isomer mixture (mix-[70]PCBM, 8.2%).
[1] a) Umeyama, T.; Imahori, H. Acc. Chem. Res. in press; b) Umeyama, T.; Miyata, T.; Jakowetz, A. C.; Shibata,S.; Kurotobi, K.; Higashino, T.; Koganezawa, T.; Tsujimoto, M.; Gelinas, S.; Matsuda, W.; Seki, S.; Friend, R.
H.; Imahori, H. Chem. Sci. 2017, 8, 181; c) Umeyama, T.; Shibata, S.; Miyata, T.; Igarashi, K.; Koganezawa, T.;
Imahori, H. RSC Adv. 2017, 7, 45967; d) Umeyama, T.; Shibata, S.; Igarashi, K.; Takahara, S.; Higashino, T.; Seki,
S.; Imahori, H. Chem. Lett. 2017, 46, 1001; e) Umeyama, T.; Igarashi, K.; Sakamaki, D.; Seki, S.; Imahori, H.
Chem. Commun. 2018, 54, 405.
Corresponding Author: T. Umeyama
Tel: +81-75-383-2568, Fax: +81-75-383-2571
Web: http://www.moleng.kyoto-u.ac.jp/~moleng_05/umeyama_e.html
E-mail: umeyama@scl.kyoto-u.ac.jp– 30 –

2-9Synthetic Usefulness and Device Application Studies of Cationic Fullerenes○Yutaka Matsuo1,2,3
1
2Institutes of Innovation for Future Society, Nagoya University, Nagoya 464-8603, Japan
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
3
University of Science and Technology of China, Hefei 230026, China

Normally, fullerene and fullerene derivatives have electron affinity to accept electrons.
This is because of electrophilic surface of fullerenes derived from convex exterior shape
giving lowered electron density in molecular orbital at the fullerenes surface. This nature
makes fullerene anions stable after receiving electrons. Many fullerene functionalization
reactions and electronic application researches have been developed and performed based on
this electrophilic property. For example, synthesis of PCBM, Prato reactions, Bingel-Hirsch
reactions, Grignard reagents addition, and so on take place starting from nucleophilic
additions to fullerenes. Application studies of fullerenes as electron acceptors and electrontransporting layers in organic thin-film solar cells and perovskite solar cells are also based onelectron affinity of fullerenes.
On the other hand, removal of electrons from fullerenes, which provides cationic fullerenes,
gives unique reactivity in fullerene modifications[1-3] and special ability in organic thin-film
device applications.[4] An alternative method is inclusion of lithium ion into the fullerene cage
to make it cationic (Figure 1). Obtained fullerene cation showed unique reactivity to produce
new fullerene derivatives which are unavailable in conventional methods using anionicfullerene key intermediates. These unique reactivities are derived from much lower-lying
LUMO levels of cationic fullerenes compared with neutral or anionic fullerenes after removalof electron or addition of positive charge. In other words, cationic fullerenes are morestrongly electrophilic than neutral/anionic fullerenes, reacting with weak nucleophiles withhigh reaction rate and abstracting electron from electron rich compounds. These characters
represent frontier of synthetic fullerene chemistry and create new organic electronic devices.
X

modification– e–+ Li +

Li +unique reactivity
special role in devices

X = C, O, S

new C60 derivatives

Figure 1. Formation of cationic fullerenes by removal of electrons and inclusion of lithium ion.
[1] H.-S. Lin, Y. Matsuo, Chem. Commun. 2018, 54, 11244–11259. (Feature article)[2] Y. Matsuo, Y. Yu, X.-Y. Yang, H. Ueno, H. Okada, H. Shibuya, Y. S. Choi, Y. W. Jin, J. Org. Chem. 2019,84, 6270–6277.
[3] H. Okada, H. Ueno, Y. Takabayashi, T. Nakagawa, M. Vrankić, J. Arvanitidis, T. Kusamoto, K. Prassides, Y.
Matsuo, Carbon 2019, 153, 467–471.
[4] I. Jeon, H. Ueno, S. Seo, K. Aitola, R. Nishikubo, A. Saeki, H. Okada, G. Boschloo, S. Maruyama, Y.
Matsuo, Angew. Chem. Int. Ed. 2018, 57, 4607–4611.
Corresponding Author: Y. Matsuo
Tel: +81-52-747-6722; Web: http://www.matsuo-lab.net; E-mail: yutaka.matsuo@chem.material.nagoya-u.ac.jp– 31 –

3-1
Self-Assembled Peptides as a Molecular Scaffold on CVD Grown Monolayer
MoS2 Transistor towards Biosensing○Hironaga Noguchi1, Yuhei Hayamizu1
1

School of Materials and Chemical Technology Department of Materials Science and Engineering
Tokyo Institute of Technology, 2-12-1 Ookayama, meguroku, Tokyo, Japan

2D materials such as graphene have been investigated to be applied for biosensors due to their
excellent electrical properties and high specific surface area. More recently, MoS2 field-effecttransistor (FET) has exhibited higher sensitivity than graphene FET due to its semiconducting
nature [1]. There are some reported methods of probe immobilization on MoS 2 FET such as
using dielectric layer and immobilizing via covalent bonds [1,2]. However these methods leadto decrease sensitivity and disturb intrinsic electrical properties. So we focus on self-assembled
peptides to overcome these problems. These peptides on the surface of 2D materials form
uniform and ordered structures arise from self-assembly with non-covalent integrations. These
peptides are expected as a molecular scaffold for immobilizing probe molecules without
degrading the electrical properties. Since the operation of the biosensor is carried out under wet
condition, behavior of MoS2 FET in solution is important. However, the response of MoS2 FET
to the absorbed peptides has not been reported yet. In this work, we observed the influence ofthe self-assembled peptides in buffer solution on the electrical characteristics of MoS2 FET. We
also immobilize bio-probe using self-assembled peptides to demonstrate target biomolecule
through co-assembly process.
Y5Y (YGAGAGAGAGAY) peptide inspired by fibroin form uniform and oriented structure
and can maintain ordered nanostructures even after rinsing with DI water [3]. In this work, we
designed RY5, EY5, and QY5, in which positively charged arginine, negatively charged
glutamic acid, and neutral glutamine were introduced at both ends of Y5Y. For themeasurement, the source-drain current with respect to the gate voltage was measured with aplatinum reference electrode in 10 mM phosphate buffer. After the formation of the peptide
self-assembled structures, measurements were carried out in the same manner. The morphologyof the self-assembled peptides on MoS2 surface was also measured by Atomic force microscopy(AFM). We chose streptavidin (SA) as a detection molecule because specific interaction
between biotin and SA is widely used to demonstrate biomolecule detection.
As results, we found that these three peptides form uniform and ordered structures on MoS2
surface by AFM measurement. In the conductivity measurements, MoS2-FET shows no shift ofthreshold voltage after formingab
peptide self-assembled structure on
the surface and also no change in thetransistor mobility. This result
suggests that our peptides may be
useful as a molecular scaffold for
MoS2 biosensor[1] Sarkar, D.et al. ACS Nano, 2014, 8(4),3992-4003.
[2] Naylor, C. et al. ACS Nano, 2016, 10(6),6173-6179.
[3]Li, P. et al. ACS Appl. Mater. Interfaces,
2019, 11, 20670–20677.

ϮϬϬŶŵ

Figure1 (a) AFM image of self-assembled peptide
structure on the MoS2 surface. (b) Source-Drain
conductivity vs applied Gate voltage of MoS2-FET before
and after the incubation of peptides.

– 32 –

3-2
High-resolution Measurement on Graphene Quantum Dots
○Toshiki Sugai, Fumiaki Uchiyama, Yuya Ooishi, Takanori Nakayasu, and Ryo Sasaki
Department of Chemistry, Toho University, Miyama 2-2-1 Funabashi, 274-8510, Japan
Ion mobility spectrometry (IMS) has revealed novel information on nano materials[1].
However, its resolution is low, which limit its role to a simple filter for mass spectrometry. To
improve the resolution, IMS systems with trap functions have been developed by mainly
extend the drift length of the system[2]. We also have been developing the ion trap ion
mobility measurement system focusing on long cyclic and successive measurement on thesame single nano particles. Even with trap functions, usual IMS systems are dedicated formass spectrometry, which makes the cyclic measurement impossible. Here we present
high-resolution measurement on graphene quantum dots (GQD) with successive
measurements by an improved ion trap ion
mobility system.
The system consists of several electrodes
with a hole at the center, where analternative current with high and low
frequency were applied. Ionized GQD bylaser desorption ionization by a YAG laser
were trapped for around an hour and weremoved reciprocally by 30 mm in nitrogengas at ambient pressure. The distance wasincreased by an order of magnitude fromthat of the previous system of 3 mm.

Fig. 1 Observed velocity distributions of
GQD with the current and the previous

systemFig. 1 shows observed normalized mobility
distribution of one particle of ionized GQD
by the previous low-resolution and the present high-resolution systems. The resolution isenhanced from 5 of the previous system to 100 of the new system. Cyclic and successive
measurement on a single GQD make it easy to evaluate the resolution precisely.
We will show other improvements on simultaneous measurement on optical response or
charge together with mobility measurement for a single GQD molecule.

[1] T. Sugai et al., J. Am. Chem. Soc. 123, 6427 (2001).
[2] F. Fernandez-Lima et al., J. Ion Mobil. Spec. 14, 93 (2011)

TEL: +81-47-472-4406, E-mail: sugai@chem.sci.toho-u.ac.jp– 33 –

3-3
A three-dimensional covalent network of fused pentagons: A hard carbon
allotrope with negative Poisson’s ratio
Y. Fujii , M. Maruyama , N. T. Cuong , and S. Okada
Graduate School of Pure and A pplied Sciences, University of Tsukuba, 1-1-1 Tennodai,
Tsukuba, Ibaraki305-8571, Japan
1

1

1

1

1

Carbon allotropes show interesting structural variations owing to three possible orbital
hybridizations of constituent C atom. Carbon allotropes consisting of both sp2 and sp3 C
atoms have been attracting much attention, because of their morphological diversity causedby the number of sp2 and sp3 C atoms and their mutual arrangements in networks.
High-pressure and high-temperature treated C60 fullerenes are representative examples ofsuch allotropes, being expected to the hard carbon allotropes with low mass density. The
rapid quenching of amorphous carbon causes the sp2 and sp3 hybrid C allotrope, known as Q
carbon, which has been reported to possess magnetism and remarkable hardness exceeding
diamond. Recently, bottom-up synthesis technique realizes the novel carbon allotropes withsignificant mechanical and electronic properties.
In this work, we theoretically explore a three-dimensional carbon allotrope (pentadiamond)obtained by co-polymerization of spiro[4.4]nona-2,7-diene and [5.5.5.5]fenestratetraene, as apossible candidate for hard carbon
allotropes with unusual mechanicalproperties (Fig. 1). Using thedensity functional theory with thegeneralized gradient approximation,
we found that the pentadiamondhas the high bulk modulus of 383
GPa and negative Poisson’s ratioof -0.198 leading to the remarkablemechanicaltoughnessagainstanisotropic structural deformations.
Corresponding author: Y. Fujii(yfujii@comas.frsc.tsukuba.ac.jp)

Fig. 1 (a) Optimized structures of pentadiamond. Gray and whitespheres denote sp2 and sp 3 C atoms, respectively. (b) Consistent unitsof pentadiamond, where A and B indicate spiro[4.4]nona-2,7-dieneand [5.5.5.5]fenestratetraene, respectively. Gray and white spheres
denote C and H atoms, respectively.

– 34 –

3-4
Edge plasmon in graphene ribbon
M. Shoufie Ukhtary, Maruoka Masato, and Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Surface plasmon is an oscillation of charge density that propagates as an electromagnetic (EM)wave on a surface. Surface plasmon has been an interesting platform to confine and control thelight in sub-wavelength scale, since the EM fields of surface plasmon is spatially localized near
the surface. In particular, we can control surface plasmon, since the charge density of graphene
can be controlled by using gate voltage. As far as we consider graphene as an infinite twodimensional (2D) material, the whole charges in graphene oscillates collectively, which forms
a truly 2D plasmon. However, if we consider the region in the vicinity of edge, there will bean accumulation of charges near the edge. This accumulation of charges can also oscillate
collectively and form so-called the edge plasmon with the EM fields localized near the edge[1]. The edge plasmon is a distinct mode from the 2D plasmon, since the frequency of edge
plasmon is always lower than of the 2D plasmon and the EM fields is localized near the edge,
not uniform across the surface [2].
In this work, we discuss the edge plasmon in graphene ribbon with a finite width by solving
the electric potential analytically using the Lorentz gauge [3]. We show that the frequency ofedge plasmon depends on the width and the Fermi energy of graphene. More importantly, we
find that the electric field of edge plasmon on the surface of graphene rotates near the edge asa function of time. The reason of the rotation is that the localization of the induced electricfields near the edge induces phase difference between the electric fields in the direction paralleland perpendicular to the edge. In contrast to the out-of-plane rotation of electric field for 2D
plasmon [4], the rotation of electric field is in-plane and the rotation direction (clockwise oranti-clockwise) depends on the direction of wavevector of the edge plasmon. As a result, therotating electric field on the surface of graphene also induces rotating current, which generates
scattered EM wave with elliptical polarization.

[1] A. L. Fetter. PRB 33, 3717 (1986).
[2] J. Song et al. PNAS 113, 4658 (2016)[3] M. S. Ukhtary et al. in Preparation[4] K. Y. Bliokh et al. New J. Phys. 19 123014 (2017)– 35 –

3-5
Electronic structure of hexagonal covalent networks with structuralimperfections: Flat band engineering by atomic substitution and doping
Susumu Okada, Mina Maruyama, Tomonari Mizoguchi, and Yasuhiro Hatsugai
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
Electronic structure of graphene is sensitive to structural imperfections introduced inhoneycomb covalent networks. By imposing an open boundary condition, which is regarded
as the line imperfection, with zigzag shapes,
peculiar edge localized states emerges at the
Fermi level and around the zone boundary
known to be edge state. Atomic defects causes
non-boding states at the Fermi level
corresponding with the number of sublattice
imbalance. In this work, we focus on graphitic
network with monovacancies which are densely
arrangedintriangularmanner(aBishamon-kikko pattern: Fig. 1), and elucidate
their electronic structure in terms of the on-site Figure 1: Geometric structure of aenergy difference between two sublattices. Using graphitic covalent network withthe density functional theory and the monovacancies. Gray and white circles
tight-binding analysis, we found that theelectronic structure of the network is highly denote A and B sublattices,modulated by introducing the on-site energy respectively.
difference between two sublattices: the network
without on-site energy difference has a Dirac(a)(b)
cone and a flat band at the Fermi level, while
the network with on-site energy difference
possesses a Dirac cone and the kagome bandaround the Fermi level (Fig. 2). By analyzing
the tight-binding Hamiltonian, the peculiar
electronic structure is ascribed to thesecond-neighbor
hopping,which
form
hexagonal and kagome networks for white andgray circles in Fig. 1, respectively, as theperturbation to the unperturbed Hamiltonian
associated with the on-site energy. Compounds, Figure 2: Electronic structures of
C2N3, C5N, C5B, and C6F, are possible
graphitic network with monovacancies
materials those exhibit unusual electronic(a) without and (b) with onsite energy
structures.
difference.
Corresponding Author: S. Okada
Tel: +81-29-8535921
E-mail: sokada@comas.frsc.tsukuba.ac.jp– 36 –

3-6
Observation of third-harmonic generation in single-layer grapheneusing Maker fringe method○Daiki Inukai1, Takeshi Koyama1, Kenji Kawahara2, Hiroki Ago2, and Hideo Kishida11Department of Applied Physics, Nagoya University, Nagoya, Aichi 464-8603, Japan
2
Global Innovation Center, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Single-layer graphene shows distinctive optical responses which reflect the twodimensional honeycomb structure [1]. Single-layer graphene is expected to show strong
nonlinear optical responses [2]. Single-layer graphene is desired to be utilized in
optoelectronic applications such as optical switches and ultrafast optical detectors. Recently,
there are several reports about third-harmonic generation (THG) in graphene [3,4]. The
reported values of the third-order nonlinear optical susceptibility 𝜒𝜒 (3) spread to more thansix orders of magnitude [5]. Furthermore, the generation process was not elucidated until now.
In this research, we focus on THG in single-layer graphene and aim at the elucidation of
the generation process on the basis of the magnitude of the third-order nonlinear susceptibility𝜒𝜒 (3) and its phase. In this experiment, we used a regenerative amplifier seeded by amode-locked Ti-sapphire laser (1 kHz, 800 nm). The wavelength of the pulse laser isconverted to be 2200 nm (idler beam) by an optical parametric amplifier (~150 fs).
Single-layer graphene was transferred
onto a SiO2 substrate. THG wasobserved to use Maker fringe (MF)method. The intensity of third harmoniclight was measured with change of
optical length of the incident laser beam
by rotating sample (Fig. 1). We
compared the MF patterns of thegraphene/SiO2 sample with that of the
SiO2 substrate. As a result, we obtained
the magnitude of the third-ordernonlinear susceptibility 𝜒𝜒 (3) of thegraphene and its phase. The results ofFig. 1. Maker fringe method.
the analysis and the electronic process
governing THG process in single-layer
graphene will be discussed.
[1] F. Bonaccorso et al., Nat. Photonics 4, 611-622 (2010).
[2] M. M. Glazov and S. D. Ganichev, Phys. Rep. 535, 101-138 (2014).
[3] N. Kumar et al., Phys. Rev. B 87, 121406 (2013).
[4] S.-Y. Hong et al., Phys. Rev. X 3, 021014 (2013).
[5] T. Jiang et al., Nat. Photonics 12, 430-436 (2018).
Corresponding Author: H. Kishida
Web: http://www.op.ap.pse.nagoya-u.ac.jp/
E-mail: kishida@nagoya-u.jp– 37 –

3-7
Design and control of band gap of functionalized single-walled carbon
nanotube quantum dots
○Yui Konno,1 Yutaka Maeda1, Kiyonori Kuroda1, Haruto Tambo1, Hiyori Murakoshi,1 Michio
Yamada,1 Pei Zhao,2 Xiang Zhao,3 Shigeru Nagase,4 Masahiro Ehara2
1

Department of Chemistry, Tokyo Gakugei University, Tokyo 184-8501, Japan
Research Center for Computational Science, Institute for Molecular Science, Okazaki, 444-8585,
Japan
3
Institute for Chemical Physics, Department of Chemistry, School of Science, State Key Laboratory ofElectrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
4
Fukui Institute for Fundamental Chemistry (FIFC), Kyoto University, Kyoto 606-8103, Japan
2

Recently, it has been reported that the chemical functionalization of SWNTs, such as
photooxidation and arylation, induces bright and red-shifted NIR PL peaks [1,2,3]. Wang et al.
reported the observation of new PL peaks in the range of 1110–1148 nm from arylated (6,5)
SWNTs depending on the substituents of the phenyl group [2]. A good correlation was foundbetween this emission wavelength and Hammett's constant, which revealed that the electronic
effect of the substituent is one of the factors in emission wavelength control. Recently, we havereported that dialkylation of (6,5) SWNTs using butyllithium and butyl bromide and theirsubsequent thermal treatment resulted in emergence of new strong PL peaks at around 1220 nm[4]. Additionally, (6,5) SWNTs functionalized using 1,2-bis(bromomethyl) benzene
predominantly resulted in emergence of a PL peak at 1231 nm [5]. These results indicate that
controlling the addition patterns of addenda are another factor that controls the emission
wavelength. The contribution of the addition site carbons on the difunctionalized SWNTs has
been confirmed theoretically [6]. In this work, we focus on bulkiness of addenda and local strain
at the addition cites as another factor controlling the emission wavelength of functionalized
SWNTs [7,8]. After functionalization using bromoalkanes, new red-shifted peaks wereobserved at ~1100 nm and/or ~1210 nm. The degree of functionalization of the SWNTs
decreased with the increasing bulkiness of the reagents used. In addition, the PL efficiency waschanged significantly with the increase of the bulkiness ofreagents and PL peak at ~1100 nm was observed predominantly.
On the other hand, after functionalization with dibromoalkanes,
PL peaks were observed as a dominant peak in the range of1215-1231 nm depending on the alkyl chain length of the
dibromoalkane used. Density functional theory (DFT) and timedependent DFT calculations of model compounds suggest thatthe bulkiness of the reagents and local strain induced bycycloaddition plays an important role in tuning the local band
gap energies of functionalized SWNT quantum dots.

[1] S. Ghosh et al. Science, 330, 1656 (2010). [2] Y. Wang et al. Nat. Chem. 5, 840 (2013). [3] Y. Maeda et al. J.
Am. Chem. Soc., 135, 6356 (2013). [4] Y. Maeda et al. Chem. Commun., 51, 13462 (2015). [5] Y. Maeda et al.
Nanoscale, 8, 16916 (2016). [6] X. He et al. ACS Nano, 11, 10785 (2017). [7] Y. Maeda et al. Nanoscale, 10,23012 (2018). [8] Y. Maeda et al. RSC Adv., 9, 13998 (2019).
Corresponding Author: Y. Maeda
Tel: +81-42-329-7512 E-mail: ymaeda@u-gakugei.ac.jp– 38 –

3-8
Geometries and electronic properties of transition metal dichalcogenide
nanotubes○Shuntaro Oshima1, Masayuki Toyoda1, Susumu Saito1, 2, 3
1

2

Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
Advanced Research Center for Quantum Physics and Nanoscience, Tokyo Institute of Technology,
Meguro, Tokyo 152-8551, Japan,
3
Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama,
Kanagawa 226-8503, Japan

Group VI transition metal dichalcogenides (TMDs) are
attracting growing attention. TMDs are composed of transition
metal atoms (Mo, W, …) and chalcogen atoms (S, Se, …). Sincemonolayers of TMDs have direct energy gaps in the range of 1 to
2 eV, they are considered to be promising materials for
optoelectronic devices. Because TMDs have high braking
strength, the strain dependent electronic properties of TMDs havebeen vigorously studied.
Recent development of experimental techniques has enabled
FIG. 1 Top view of (10,0)
us to synthesize single-walled TMD nanotubes [1], and hybrid
hybrid TMD nanotubes.
TMD sheets containing two distinct chalcogens [2]. Because two
chalcogen sides are asymmetric in hybrid
TMD sheets, these mixed-chalcogen TMD
layers prefer curved structures. Figure 1
illustrates the typical structures of thesehybrid TMD nanotubes.
We study the geometries and theelectronic properties of TMD nanotubes
including these mixed-chalcogen TMD
nanotubes under axial strains using local
density approximation in the framework ofdensity-functional theory (DFT). From thedetailed analysis of the optimized geometries,
we find a global strong correlation between
FIG. 2 Energy gap values of several TMD
fundamental gap values and some combined nanotubes and several TMD sheets versus
structural parameter (Fig. 2). This geometrical parameter λ.
relationship will be useful to predict gap
values in large TMD systems.
[1] R. Tenne and M. Redlich, Chem. Soc. Rev. 39, 1423 (2010).
[2] A. Lu, H. Zhu, J. Xiao, C. Chuu, Y. Han, M. Chiu, C. Cheng, C. Yang, K. Wei, Y. Yang, Y. Wang, D.
Sokaras, D. Nordlund, P. Yang, D. A. Muller, M. Chou, X. Zhang, and L. Li, Nature Nanotech. 12, 744 (2017).
Corresponding Author: S. Oshima
Tel: +81-3-5734-2368, Fax: +81-3-5734-2739
E-mail: soshima@stat.phys.titech.ac.jp– 39 –

3-9
Two-point modification for doped site creation of locally functionalized
single-walled carbon nanotubes using bis-aryldiazonium salts○Tomohiro Shiraki1,2, Boda Yu1, Yoshiaki Niidome1, Tsuyohiko Fujigaya1,2,3
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
CMS, Kyushu University, Fukuoka 819-0395, Japan

Photoluminescence (PL) of single-walled carbon nanotubes (SWNTs) appears in nearinfrared (NIR) regions, which is applicable to bioimaging and telecommunication devices.
The NIR PL properties are governed by photogenerated excitons in the one-dimensional
nanostructures. To enhance the contribution of the exctions to PL, defect doping to SWNTs bylocal chemical functionalization is gathering great attention. The locally functionalized
SWNTs (lf-SWNTs) show additional PL (E11*) with red-shifted wavelengths and enhanced
quantum yields compared to original PL (E11) of pristine SWNTs.[1-8] Therein, the doped
sites work as emissive sites with narrower bandgaps and exciton trapping features.
Interestingly, the functionalized molecules have been found to modulate PL of the lf-SWNTs.
Here, we report two-point modification for longer wavelength NIR PL generation and its
wavelength modulation based on molecular structures of the modifiers.
We synthesized bis-arydiazonium salts (bAs) that have two reactive aryldiazonium groups
connected with a methylene linker. In order to achieve PL wavelength modulation, the linker
effects were examined by changing the connected positons on the aryl groups (pbAs for paraand mbAs for meta) and the length of methylene chains.[5,8]For the local functionalization, SWNTs were solubilized in a micellar solution of sodium
dodecyl sulfate (SDS), and then reacted with the synthesized bAs through diazonium
chemistry. In PL spectra of the obtained lf-SWNTs (lf-SWNTs-pbA and lf-SWNTs-mbA), PL
peaks appeared at 1245 nm and 1257 nm, respectively when the linker of five methylene units
was used. Those were assigned to E112* PL that were observed in longer wavelength regions
than E11* PL of mono-aryl functionalized lf-SWNTs (ca. 1140 nm). When the linker lengths
of bAs were changed, the shorter linkers induced longer wavelength PL. Namely, themethylene chain length tunes the E112* PL wavelengths. In addition, the lf-SWNTs-mbA
showed larger spectral shifting behavior in the linker length-dependent E112* wavelengthcompared to the lf-SWNTs-pbA.
Thus, the molecular design of the bis-aryldiazonoum modifiers achieves wavelength
modulation of E112* PL, which enables us to produce NIR PL nanomaterials with wider
wavelength ranges of their emission.
[1] B. Weisman et al. Science, 330, 1656 (2010). [2] Y. Miyauchi et al. Nat. Photon., 7, 715 (2013). [3] Y. Wanget al. J. Am. Chem. Soc., 138, 6878 (2016). [4] S. Doorn et al. Nat. Photon., 11, 577 (2017). [5] T. Shiraki et al.
Sci. Rep., 6, 28393 (2016). [6] Y. Maeda et al. Nanoscale, 8, 16916 (2016) [7] T. Shiraki et al. Chem. Commun.,53, 12544 (2017). [8] T. Shiraki et al. Chem. Lett., 48, 791 (2019).
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp– 40 –

ポスター発表
Poster Preview

1P – 1 ～ 1P – 30
2P – 1 ～ 2P – 29
3P – 1 ～ 3P – 30

1P-1Time-resolved photoluminescence spectroscopy of epitaxial bilayer
graphene on SiC○Kensuke Saito1, Tomonari Koishi1, Jianfeng Bao2, Wataru Norimatsu2, Michiko Kusunoki3,
Hideo Kishida1, Takeshi Koyama1
1

Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Department of Chemical Systems Engineering, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603,
Japan

2

Graphene has extremely high conductivity and unique optical properties, and manystudies on device applications of graphene have been conducted until now [1]. In 2015, anarticle on thermal radiation of graphene was published [2]. For application of graphene inluminescence device, it is important to understand the origin of its luminescence. According
to early studies on photoluminescence (PL) from monolayer graphene in the visible andinfrared light regions [3-6], the origin of the PL from monolayer graphene is radiative
recombination of free electron-hole pairs. For bilayer graphene, however, although infrared
PL measurements were conducted [7], the origin of the PL from bilayer graphene has not beenclarified.
Bilayer graphene has two advantages for application to luminescence device. Firstly,a bandgap can be induced by application of electric field for bilayer graphene [8], opening a
possibility of control of excited-state relaxation. Secondly, bilayer graphene has more-electrons related to optical transition than monolayer. In this study, we investigated theorigin of the PL in epitaxial bilayer graphene by femtosecond time-resolved PL
measurements.
The epitaxial bilayer graphene was prepared by thermal decomposition of 4H-SiC.
The PL measurements were conducted based on the frequency up-conversion method. The
light source was a mode-locked Ti:sapphire laser. The excitation photon energy and pulse
duration were 1.55 eV and 90 fs, respectively. Figure 1 shows PL decay of the epitaxial
bilayer graphene at a photon energy of 1.3 eV. The PL decay curve was analyzed byconvolution method with a single-exponential function and an instrument response function(Gaussian shape with a full width at half-maximum of 130 fs). The obtained time constant isapproximately 30 fs. We observed excitation density dependences of PL decay time andintensity. Based on the results, we discuss the origin of the PL from the bilayer graphene.
[1] K. S. Novoselov et al., Nature 490, 192 (2012).
[2] Y. D. Kim et al., Nat. Nanotechnol. 10, 676 (2015).
[3] C. H. Lui et al., Phys. Rev. Lett. 150, 127404 (2010).
[4] W.-T. Liu et al., Phys. Rev. B 82, 081408 (2010).
[5] T. Koyama et al., ACS Nano 7, 2335 (2013).
[6] H. Imaeda et al., J. Phys. Chem. C 122, 19273 (2018).
[7] H. Watanabe et al., Chem. Phys. Lett. 637, 58 (2015).
[8] Y. Zhang et al., Nature 459, 820 (2009).
Corresponding Author: T. Koyama
Tel: +81-52-789-4450, Fax: +81-52-789-4450,
E-mail: koyama@nuap.nagoya-u.ac.jp

Fig. 1 Photoluminescence decay of
epitaxial bilayer graphene on SiC at a
photon energy of 1.3 eV.

– 41 –

1P-2
Effects of CNT diameter on mechanical and electrical properties of aligned
CNT/epoxy composites○Yohei Tsuyuguchi, Kazuya Hosogi, Takayuki Nakano, Yoku Inoue
Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561, Japan

Because of the high tensile properties of carbon nanotube (CNT), CNT/polymer composites
have been studied as structural materials. We have been focusing on the mechanical andelectrical properties of unidirectionally aligned multi-walled CNT /epoxy composite materials.
In the CNT/resin composite, the outer layer is responsible for load and charge propagation, andthe inner layer less contributes to it. Therefore, the larger the CNT diameter, the lower themechanical and electrical properties in the composites. Thus, the dimension of CNT
dramatically affects the features of the composite. In this work, we fabricated CNTs withdifferent diameters and used them for composite materials. We evaluated its properties tounderstand the effects of CNT diameter on the mechanical and electrical properties of
CNT/epoxy composites.
Spinnable MWCNT forests were synthesized by a chloride mediated chemical vapor
deposition method and a floating catalyst CVD method. Then, CNT sheets were fabricated bystacking CNT webs drawn from the CNT forest. Then, CNT/epoxy composites were preparedby a hot melt method using the CNT sheet and an epoxy film. The volume fraction (Vf) of CNT
in the composite was changed by changing the amount of CNT in composites. Vf was evaluatedby thermogravimetric analysis. Tensile tests and electricalconductivity tests were performed to evaluate mechanicaland electrical properties.
The average CNT diameters, used in this study, were
8.3 nm36.5 nm, 24.3 nm, 12.3 nm, and 8.3 nm. Figure1 shows
the tensile strength of the composite as a function of Vf.
With increasing Vf, tensile strength was monotonically
24.3 nm12.3 nmincreased. Comparing the tensile strength at Vf of 10 %, it
36.5 nmincreased from 80 MPa to 150 MPa with decreasing CNT
diameter. Figure 2 shows the relationship between theelectrical conductivity and Vf. As well as the tensile Fig.1 CNT diameter dependence of tensile
strength
strength, the electrical conductivity was increased from 80
S/cm to 150 S/cm with decreasing CNT diameter among
8.3 nmcomposites having Vf of 10 %. Through the tensile tests
and electrical measurements, we found that composites,
having CNT with smaller diameter, show higher tensile
strength and electrical conductivity, and it is attributed to12.3 nman increase in surface areas of CNT in composites
24.3 nm36.5 nm
resulting in effective propagation of load and charges.
Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356, Fax: +81-53-478-1356,
Web: http://cnt.eng.shizuoka.ac.jp/
E-mail: inoue.yoku@shizuoka.ac.jp

Fig.2 CNT diameter dependence ofelectrical conductivity– 42 –

1P-3
The effect of gas phase species on chirality selectivity between (6,4) and(6,5) single-walled carbon nanotubes○Satoru Shiina1, Takuya Shima1, Bin Xu1, Toshiro Kaneko1, Toshiaki Kato1,2
1

Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO(6,4) purity [%](6,4) purity [%]Single-walled carbon nanotubes (SWNTs) are promising candidate for high performance
optoelectrical materials due to the unique 1-dimensional structure. Since physical properties of
SWNTs strongly depend on the chirality, chirality selective synthesis is required for industrial
application. In recent our study, (6,4) SWNTs has been grown with high purity (~57%) by
controlling the oxidation degree of the Co catalyst surface [1]. To further increase the purity of(6,4) SWNTs, elucidation of the correlation between (6,4) SWNTs purity and plasma CVD
conditions is an important subject.
Synthesis of SWNTs is carried out using a home-made diffusion type plasma CVD [2]. The
gas phase species are directly monitored during plasma CVD synthesis by quadrupole mass
analyzer (Q-mass). Gas phase condition is controlled by changing plasma generation power,
gas pressure and power supply for plasma generation (CW or pulse). To elucidate the effects ofgas phase species on chirality selectivity, correlations between these variations of gas phaseconditions and purity of each chiralities are(a)investigated.
Fig.1 is the plot of (6,4) SWNTs purity as a70function of ∆16 and ∆26, which is the difference60of Q-mass counts for specific mass (16 and 26)
before and after plasma generation, respectively.
50
Negative and positive value of ∆16 and ∆26
denotes the decomposition of CH4 and generation
40 ∆16of C2H2, respectively. As absolute value of ∆16
-10
-4
-2
0
[1×10 ]
increases, (6,4) SWNTs purity increases (Fig.
∆16 [1(a)). For ∆26, there is a suitable value to obtain(b)
the highest (6,4) SWNTs purity (Fig. 1(b)). (6,5)
70
SWNTs purity has almost opposite tendency tothat of (6,4) SWNTs. These indicate that the gas
60
phase species strongly affect on the chirality
50
selectivity between (6,4) and (6,5) SWNTs. This is
the first result showing the direct contribution of40∆26
gas phase precursors for the selective growth of
-11
0
2
4
[×10 ]
specific chirality species.
∆26 [[1] B. Xu, T. Kaneko, Y. Shibuta and T. Kato: Sci. Rep. 7,11149 (2017)[2] T. Kato and R. Hatakeyama: Nat. Nanotechnol. 7, 651(2012)
Corresponding Author: S. Shiina
Tel: +81-22-795-7046, Fax: +81-22-263-9225,
E-mail: satoru.shiina.s8@dc.tohoku.ac.jp– 43 –

Fig.1 Purity of (6,4) SWNTs as a function of(a) ∆16 and (b) ∆26.

1P-4
Wavelength modulation of near infrared photoluminescence fromsingle-walled carbon nanotubes functionalized with diarylethene derivatives○Yasuto Nakagawa1, Tomohiro Shiraki1,2, Tsuyohiko Fujigaya1,2,3
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
Center for Molecular Systems, Kyushu University, Fukuoka 819-0395, Japan

PL Intensity / a.u.

Single-walled carbon nanotubes (SWNTs) with semiconducting features show
photoluminescence (PL) in the near infrared region, which is applicable to a wide variety of
optical applications including bioimaging and telecommunication devices. Locallyfunctionalized SWNTs (lf-SWNTs), which are synthesized by a slight amount of chemical
modification, produce red-shifted PL with enhanced quantum yields (E11*) compared to theoriginal PL (E11) of pristine SWNTs[1]. The functionalized molecules on the lf-SWNTs havebeen found to determine and modulate the E11* PL wavelength. In addition, the PL wavelengthswitching has been reported based on protonation (pH variation)[2] and molecular binding on
the functionalized groups[3,4]. In this study, we examine PL property modulation of lf-SWNTs
through functionalization with photochromic dyes of diarylethene derivatives (DEs) towards
development of photoswitchable PL shifting systems[5].
The diazonium salt of DE was synthesized and reactedwith solubilized SWNTs in a SDBS micellar solution forthe synthesis of DE-modified lf-SWNTs (lf-SWNTs-DE).
Fig.1 shows the PL spectra of pristine SWNTs and the lfSWNTs-DE. The pristine SWNTs showed a PL peak at 980
nm assignable to E11 emission. For the lf-SWNTs-DE, an
additional PL was observed at 1151 nm, which would be
produced by local functionalization of DEs. When thesolution of lf-SWNTs-DE was irradiated with ultraviolet(UV) or visible light, spectral changes were observed.
900
1000
1100
1200
1300
Namely, UV/vis. absorption measurements showed
Wavelength / nmabsorbance changes relating to isomerization of DE and,accordingly, peak shifts of E11* PL occurred for the lf- Fig. 1 PL spectra of pristine SWNTs
SWNTs-DE. The results indicate that a new photo- (dashed line) and lf-SWNTs-DE
switching system for E11* PL wavelength would be created (solid line).
by this approach.
[1] Y. Piao, B. Meany, L. R. Powell, N. Valley, H. Kwon, G. C. Schatz, Y. Wang, Nat. Chem. 2013, 5, 840.
[2] H. Kwon, M. Kim, B. Meany, Y. Piao, L. R. Powell, Y. Wang, J. Phys. Chem. 2015, 119, 3733.
[3] T. Shiraki, H. Onitsuka, T. Shiraishi, N. Nakashima, Chem. Comm. 2016, 52, 12972.
[4] T. Shiraki, T. Shiga, T. Shiraishi, H. Onitsuka, N. Nakashima, T. Fujigaya, Chem. Eur. J. 2018, 24, 19162.
[5] M. Irie, M. Mohri, J. Org. Chem. 1988, 53, 803.
Corresponding Author: T. Fujigaya
Tel/Fax: +81-92-802-2842,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp– 44 –

1P-5
Monolayer WS2 Light-Emitting Devices with micro-cavity○Tomohiro Ogura1, Tomoyuki Yamada1, Naoki Wada2, Takahiko Endo2,

Kenichi Yamashita3, Yasumitsu Miyata2, Jiang Pu 1, Taishi Takenobu 1
1

Department of Applied Physics, Nagoya Univ., Nagoya 464-8601, Japan
Department of Physics, Tokyo Metropolitan Univ., Tokyo 192-0397, Japan
3
Faculty of Electrical Engineering and Electronics, Kyoto Inst. of Tech., Kyoto 606-8585, Japan2

The interaction of tightly bounded excitons of monolayer transition metal dichalcogenides(TMDCs) in a micro-cavity offers a rich platform for exploring new optoelectronic devices.
For example, when the excitons and the cavity photons are strongly interacted, a newquantum state, exciton-polariton is emerging in cavity-integrated TMDCs [1].
Exciton-polariton is expected to be applied to new optical devices such as very low thresholdpolariton lasers without population inversion. Although the exciton-polariton light emission
was observed by photo-pumped measurements in TMDCs, the electrical generation of this
optical signature has not yet been realized. Because the relevant TMDC light-emitting devices
are difficult to assemble with micro-cavities due to their complicated structures [2], a simple
device technique is necessary to achieve exciton-polariton light-emitting devices. Here, we
combine electrolyte as an active medium to the Fabry-Perot-type micro-cavity. Owing to our
proposed electrolyte-based structures [3], we can easily fabricate cavity-integrated TMDC
light-emitting devices and try to realize exciton-polariton electroluminescence (EL).
The chemically grown WS2 monolayer flakes are firstly
transferred onto a Distributed Bragg Reflector (DBR as abottom mirror), and then two gold electrodes are patterned.
Finally, PMMA mixed with an ionic liquid are spin-coatedFig.1 Device structure
followed by deposition of thin gold film on the PMMA
surfaces as a top mirror (Fig. 1). Figure 2 shows theangle-resolved photoluminescence (PL) spectra for WS2 inthe micro-cavity. The results exhibit PL measured from 0 to
40 degrees at room temperature, and we can confirm
obvious change of the peak shape and the peak energy
depending on the angle. To further clarify the PL behaviors,
Figure 3 presents a 2D color mapping of theangle-dependent PL. We performed spectrum analysis, andeach fitted peak behaviors are also shown in Fig. 3. Since
we can see the two distinct peak behaviors as a function of
the angle, such peak behaviors indicate the observation of
Fig.2 Angle-resolved PL spectra
polariton dispersion; one is upper polariton (UP) for higher
energy and the other is lower polariton (LP) band. In thisdevice, when we apply voltages between two electrodes on
WS2 flakes, the ion distributions induce p-i-n junction to
generate EL. Therefore, we can evaluate EL behaviors insame cavity, and we will also report the angle-resolved EL.
[1] N. Lundt et al., Nat. Commun. 7. 13328 (2016)[2] J. S. Ross et al., Nat. Nanotechnol. 9, 268 (2014)[3] J. Pu, et al. Adv. Mater. 29, 1606918 (2017).

Fig.3 2D color mapping of PL

Corresponding Author: T. Takenobu, Tel/Fax: +81-52-789-5173, E-mail: takenobu@nagoya-u.jp– 45 –

1P-6
Restoring intrinsic optical properties of
CVD-grown MoS2 monolayers and their heterostructures○Kana Kojima1, Hong En Lim1, Zheng Liu2, Wenjin Zhang3, Tetsuki Saito1, Yusuke
Nakanishi1, Takahiko Endo1, Yu Kobayashi1, Kenji Watanabe4, Takashi Taniguchi4, Kazunari
Matsuda3, Yutaka Maniwa1, Yuhei Miyauchi3, Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
Inorganic Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
3
Institute of Advanced Energy, Kyoto University, Uji, 611-0011, Japan
4
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan

In this work, we have investigated the intrinsic optical properties of MoS2 monolayers andMoS2/WS2 van der Waals (vdW) heterostructures, grown using chemical vapor deposition [1].
To understand the effect of growth substrate, the samples grown on SiO 2/Si surface weretransferred and suspended onto a porous substrate (Fig.1a). This transfer resulted in a blue shiftof the excitonic photoluminescence (PL) peak generated by MoS 2 monolayers, together withan intensity increase (Fig.1b). The blue shift and the intensity increase are attributed to therelease of lattice strain and the elimination of substrate-induced non-radiative relaxation,
respectively. This suspension technique also allowed observations of PL resulting frominterlayer excitons in the MoS 2/WS2 vdW heterostructures (Fig.1c). These results indicate thatthe suppression of lattice strain and non-radiative relaxation is essential to the formation ofinterlayer excitons, which in turn is crucial to understanding the intrinsic physical properties of
vdW heterostructures.

Fig. 1. (a) Schematic of a transfer process of samples on a porous substrate. (b) PL spectra of a MoS2 monolayer
suspended on a TEM grid and on a SiO2/Si support. Broken lines indicate the primary peak position for eachsample. (c) PL spectra of MoS2/WS2 vertical heterostructures grown on SiO2 and after the transfer on a TEM
grid.
[1] K. Kojima et al. Nanoscale, 11, 12798-12803 (2019).
Corresponding Author: Y. Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp– 46 –

1P-7
Wide-range control of excitonic properties
in monolayer WS2 by dielectric screening effect○Yuto Kajino, Kenichi Oto, and Yasuhiro Yamada
Department of physics, Chiba University, Inage, Chiba 263-8522, Japan

Monolayer Transition metal dichalcogenides (TMDCs), such as MoS2, MoSe2, WS2, WSe2,
are ideal two-dimensional (2D) semiconductors with a direct bandgap in visible region, andtheir optical properties are strongly dominated by excitons because of large exciton binding
energy. Recently, the flexible design for optoelectronic devices using stacking structures byvan der Waals force, so-called vdW heterostructure, has also attracted much attention.
The screening effect by surrounding dielectric constant can dramatically change the opticalproperties in monolayer TMDCs through modifying the Coulomb interaction between an
electron and a hole forming an exciton due to their atomically thin structures. This novel idea
has been proposed as a Coulomb engineering [1]. Although several groups have reported thechanges of the optical properties using organic solvents and layered materials such asgraphene and h-BN [1,2], systematic changes on surrounding dielectric constant have notbeen demonstrated yet. It is also essential to accurately evaluate the dependence of the exciton
resonance energy in monolayer TMDCs on modified effective dielectric constant. In thisresearch, we investigated the changes of optical properties in monolayer WS2 fabricated on
various substrates with different dielectric constant, whose dielectric constant widely ranges
from 2 to 5 at infrared frequency.
We fabricated the monolayer WS2 on various substrates with different dielectric constant bymechanical exfoliation from a bulk crystal. The monolayer WS2 at each substrate was thenidentified by optical microscopic observation, atomic force microscopy, and microscopic
spectroscopy at room temperature. We performed the optical reflectance and PL spectroscopy
at 10 K and compare the transition peak energies in monolayer WS2 on different substrates.
The systematic shifts of A and B exciton peak energies depending on the dielectric constantof substrate were observed, and A maximum change of A-exciton resonance energy of 40
meV was achieved. These results clearly demonstrated the Coulomb engineering ofmonolayer TMDC by the dielectric substrate. Detailed analysis performed in combination
with experimental results and theoretical calculation revealed that the bandgap energy as well
as exciton binding energy is reduced by ~100 meV [3]. In the presentation, we will discuss thephysical mechanism of the dielectric screening effect on the optical properties in monolayer
TMDCs.
[1] A. Raja et al., Nat. Commun. 8, 15251 (2017).
[2] Y. Lin et al., Nano Lett. 14, 5569 (2014).
[3] Y. Kajino et al., J. Phys. Chem. C 123, 14097 (2019).
Corresponding Author: Y. Kajino
Tel: +81-043-290-2740
Web: http://physics.s.chiba-u.ac.jp/ssphoto/E-mail: kajino@chiba-u.jp– 47 –

1P-8
Growth of Transition-metal-dichalcogenide-based two-dimensional
superstructures with Cold-walled Metal-Organic CVD○Satoshi Iida1, Takato Hotta1, Kenji Watanabe2, Takashi Taniguchi2, Hisanori Shinohara1, and

Ryo Kitaura1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
2

National Institute for Materials Science, Tsukuba 305-0044, Japan

Since the discovery of graphene, two-dimensional (2D)
materials have been attracting considerable attention. Recent
research on 2D heterostructures, including heterostacks andheterojunctions, has clearly demonstrated the possibility on
emergence of novel properties in these heterostructures1. In
this work, we have focused on growth of a new type ofheterostructure, 2D superlattices (2D-SLs), where periodic
junctions of different 2D materials form novel 2D
superstructures. To fully explore the possibility of 2D-SLs, Fig. 1 An AFM image of adevelopment of a highly-controllable crystal growth method WS2-MoS2 superlattice
is indispensable. For this purpose, we have focused on
Metal-Organic Chemical Vaper deposition (MOCVD), in
particular, a cold-wall type MOCVD. In this presentation,
results on MOCVD growth of transition metal
dichalcogenides (WS2 and MoS2) and 2D-SLs composed of
WS2 and MoS2 are presented.
Figure 1 shows an AFM image of a 2D-SL composed of
WS2 and MoS2. For the growth of 2D-SLs, we have Fig. 2 A typical Raman and PL
developed an automatic valve control system that enables us spectrum of a WS2-MoS2
superlattice measured at room
to perform automatic switch of the source supply. The temperature.

triangle contrasts correspond to a crystal of 2D-SL, and wide
(narrow) contrasts seen in the crystal correspond to WS2 (MoS2) monolayers: widths of each
WS2 (MoS2) region are 70 (10) nm. Figure 2 is typical Raman and PL spectrum of WS2-MoS2
2D-SLs, respectively. These spectra are consistent to the formation of 2D-SLs composed ofmonolayer WS2 and MoS2. We are, now, working on optimization of growth condition andinvestigation of atomic structure at interfaces of WS2 and MoS2. More details of growth
condition and characterization will be shown in the poster.
[1] A. K. Geim. et al., Nature 499, 419-425 (2013).
Corresponding Author: R. Kitaura Tel: +81-52-789-2477, Fax: +81-52-747-6442, E-mail: r.kitaura@nagoya-u.jp– 48 –

1P-9
Thickness dependence of CVD-grown h-BN
on PL emission and Raman of monolayer MoS2
○Hiroki Honda,1 Daichi Tanaka,1 Yuki Uchida,1 Kenji Kawahara,2 Hiroki Ago1,2,*
1Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580,
Japan
2
Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan

Recently, hexagonal boron nitride (h–BN) has become a key material for observing intrinsic
and/or exotic properties of various 2D materials and also for promoting their practicalapplications [1,2]. Although monolayer h-BN can be widely synthesized by CVD using Cu,
it is not thick enough to screen out the influences of underlying SiO2 substrate. We haverecently demonstrated the CVD growth of multilayer h-BN using Ni-Fe catalyst [3], but
influence of the h-BN thickness on 2D materials has not been clearly understood.
Here, we investigate the influence of thickness of CVD-grown multilayer h-BN on opticalproperties of monolayer MoS2. Monolayer MoS2 was grown by CVD as reported previously[4] and transferred onto a h-BN/SiO2 substrate by a wet transfer method. Figure 1a shows thephotoluminescence (PL) spectra of monolayer MoS2 on bare SiO2 and h-BN surfaces. For
reliable study, we used one single MoS2 grain deposited on h–BN with different thicknesses.
We found that the PL spectrum of MoS2 becomes sharper and more intense with increasing the
thickness of multilayer h-BN. Moreover, the contribution of the low energy PL peak (~1.8eV) corresponding to negative trions was significantly suppressed by multilayer h-BN, which
can be explained by screening of charge impurities existing on the SiO2 surface. Figure 1b
1
displays the change of the Raman spectrum of the monolayer MoS2. Both E2g(386 cm-1)
and A1g (403 cm-1) peaks shifted to higher wavenumbers. Interestingly, these Raman peaks
became very narrow even on 2 nm-thick h-BN. Therefore, our results indicate thecontribution of multilayer h-BN on the PL and Raman spectra of MoS2 can be different.

(b)Intensity (arb. unit)

6000

4000

SiO2

h-BN (2 nm)
h-BN (5 nm)
h-BN (8 nm)

A1g

E12g
2000

0
360 370 380 390 400 410 420 430

Raman shift (cm-1)

Figure 1. (a) PL and (b) Raman spectra of MoS2 deposited on SiO2 and h-BN with different thicknesses.
Inset in (a) shows the atomic model of monolayer MoS2 deposited on multilayer h-BN.
References[1] C. R. Dean et al., Nat. Nanotechnol., 5, 722 (2010). 10, 534. [2] Y. Cao et al., Nature, 556, 43 (2018).
[3] Y. Uchida et al., ACS Nano, 12, 6236 (2018). [4] H. Ago et al., ACS Nano, 10, 3233 (2016).
Corresponding: H. Ago (E-mail: h-ago@gic.kyushu-u.ac.jp)– 49 –

1P-10Charge-state investigation on metallic and semiconducting SWCNTs withvarious diameters○Yuki Kuwahara and Takeshi Saito
Nanomaterials Research Institute (NMRI),National Institute of Advanced Industrial Science and Technology (AIST),
Tsukuba 305-8565, JapanThe electric-field-induced layer formation (ELF) method, which can separate metallic (m-)
and semiconducting (s-) SWCNTs by simply applying an electric field in the longitudinal
direction to SWCNT dispersion, is one of the promising methods for the development of theirindustrial production process [1]. Recently, we revealed that s-SWCNTs are much morenegatively charged than m-SWCNTs in the ELF separation by evaluating the charge states of
m- and s-SWCNTs during the separation process. On the basis of this result, it was concluded
that the ELF separation mechanism is attributed to the dynamic changing/balancing of theelectrophoretic and electroosmotic forces acting on the SWCNTs [2]. One of the features on the
ELF method is the relatively wide tube-diameter range of separable SWCNTs, from ca. 1.0 to
1.7 nm. In this study, we have investigated the charge states for m- and s-SWCNTs with various
diameters in detail for examining the possibility of sorting in their tube diameter.
SWCNT samples with four different average tube-diameters, 1.0, 1.3, 1.7 and 2.0 nm, weresynthesized using the eDIPS method [3], and were dispersed in the aqueous solutions of 1 wt%
polyethylene (100) stearyl ether (Brij S100) by using ultrasonication. The obtained solutions
were ultracentrifuged to eliminate bundled SWCNTs, and then the supernatant solutions werecollected for the use of ELF separation. The charge state of SWCNTs was evaluated by the zeta
potential measured under various conditions of pH and surfactant-concentration. As the result,the differences in the amount of negative charge between m- and s-SWCNTs were observed
regardless of the average tube-diameters. On the other hand, the difference in the zeta potential
among the tube-diameters remained obscure because of the data scattering, which suggests thatthe improvement of sample preparation procedures for measuring the zeta potential of SWCNTs
would be needed in order to clarify the correlation between the tube-diameter and the zeta
potential. In this presentation, the yield of m- and s-SWCNTs on the ELF separation for each
SWCNT diameter will be also discussed.
[1] K. Ihara et al., J. Phys. Chem. C, 115, 22827 (2011).
[2] Y. Kuwahara et al., J. Phys. Chem. C, 123, 3829 (2019).
[3] T. Saito et al., J. Nanosci. Nanotechnol., 8, 6153 (2008).
Corresponding Author: T. Saito
Tel: +81-29-861-4863, Fax: +81-29-861-4413
E-mail: takeshi-saito@aist.go.jp– 50 –

1P-11Fabrication of large-area aligned films of single-wall carbon nanotubes
using artificially grooved membrane filters○Atsuhiro Katagiri1, Natsumi Komatsu2, Junko Eda1, Hitomi Okubo1, Kanako Horiuchi1,
Kan Ueji1, Yohei Yomogida1, Weilu Gao2, Junichiro Kono2, and Kazuhiro Yanagi1
1Department of physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan2

Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, U.S.A.

Precise control of alignment of single-wall carbon nanotubes (SWCNTs) is important for
performance optimization of SWCNT thin film devices and for correct understanding of their
physical properties. Recently, He et al. reported a technique to fabricate large-area aligned films of
SWCNTs using filtration techniques [1]. However, in the method, the mechanism of SWCNT globalalignment has not been clarified. Komatsu et al. pointed out that the presence of parallel grooves on
the filter membrane, accidentally created through the filter production process, plays a key role in theformation of global one-direction alignment [2]. Therefore, in this study, we developed a technique toartificially fabricate grooves on the membrane filters, and investigated how the artificially formed
groove structures influence the alignment of SWCNTs.
For preparation of artificially grooved membrane filters, first
we prepared optical gratings with groove densities of 300 mm-1,
600 mm-1 and 1800 mm-1 (25 mm width × 25 mm length). Thenthe groove structures of the gratings were transferred to themembrane filter using a technique similar to nano-imprinting.
Figure 1(a) shows a typical AFM image of the detailed structureof a grooved membrane filter. As shown here, we succeeded informing grooves at a pitch of about 1.66 m with a height ofabout 60 nm when we use the 600 mm-1 grooved grating. Then we
prepared SWCNT thin films with the controlled vacuum filtration
technique developed by He et al. [1]. Figure 1(b) shows an AFM
image of a SWCNT thin film prepared using the artificiallygrooved membrane filter. As shown here, SWCNTs were wellaligned along the grooved structures. Thus, we found that
artificially formed grooves can control the alignment of SWCNTs.

References:[1] He et al. Nat. Nanotechnol. 11, 1 (2016), [2] Komatsu et al.,

Figure 1 AFM images of (a)artificially grooved membranefilter and (b) SWCNT film
prepared using the filter

in preparation (2019)
Corresponding Author: K. Yanagi

Tel: +81-42-677-2809

– 51 –

E-mail: yanagi-kazuhiro@tmu.ac.jp

1P-12
Thermophysical property of single-wall carbon nanotube thin film on
Au electrodes by a time-domain thermoreflectance method○Yuya Matsuoka 1, Kan Ueji 1, Hiroyuki Matsuo 1, Yohei Yomogida 1,
Takashi Yagi 2, Kazuhiro Yanagi 1
1

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Department of Physics, National Institute of Advanced Industrial Science and Technology,
Tsukuba, Ibaraki,305-8563, Japan

2

Flexible materials such as carbon nanotubes and organic semiconductors have attracted
attention as components for thin film devices. Not only their electrical properties but also
their thermophysical properties are important to achieve optimal their device
performances. However, evaluation of thermophysical properties of thin films is usuallydifficult. Time-domain thermoreflectance (TDTR) method is one of promising methods
to clarify the thermal conductivity of thin films at the nanoscale [1]. TDTR methodmeasures heat flow in a thin film through temporal changes in reflectance of a metal film
after heating by irradiation of pump laser pulse, i.e. thermoreflectance signals. Usually,aluminum is used for TDTR measurements, because aluminum has large thermoreflectance signals at 780 nm probe wavelength, which is the second harmonic of thepump laser pulse with wavelength of 1550 nm. For electronic device applications,however, gold is often used as a metal element for electrodes, not aluminum. Thus,
understanding on thermophysical properties of thin-films on gold electrodes is required,but, the thermo-reflectance signals of gold at 780 nm are very small, thus we cannot use
conventional TDTR setups for that purpose. Therefore, here, we are developed TDTR
system which is suitable for detection of thermoreflectance signal of gold. We used probe
laser pulse with wavelength of 520 nm because Au film has large thermoreflectancesignals around this wavelength [2]. We investigated thermal conductivity of single-wallcarbon nanotube (SWCNT) thin films on the Au electrode by TDTR method.
Fig.1, shows the difference of phase change between
only Au and SWCNTs (MEIJO nano carbon ARCSO,
200 nm thickness)/Au. We observed a significant
difference of temporal changes of thermo-reflectancesignals between them, indicating that our system isapplicable for evaluation thermal conductivity of
SWCNTs on Au electrodes. In this presentation, thedetails will be discussed.
Ref: [1]Bruce M. Clemens et al. Phys. Rev. B, 37, 1085 (1988).
[2] W. J. Scouler. Phys. Rev. Lett, 18, 445 (1967).
Corresponding Author: K. Yanagi & K. Ueji,
Tel:＋81-42-677-2494, E-mail:yanagi-kazuhiro@tmu.ac.jp, kueji@tmu.ac.jp– 52 –

Fig. 1 : Phase changes in Au and
SWCNTs/Au as a function of time.

1P-13
Effect of palladium nanoparticle decoration on thermoelectric peeformanceof carbon nanotubes with vacancy defects: first principles simulation○Nayu Araki1 and Takahiro Yamamoto1,2
1

2

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
Division of Nano carbon Research, RIST, Tokyo University of Science, Tokyo 125-8585, Japan

Carbon nanotubes (CNTs) are expected to be thermoelectric materials because of their highthermoelectric power factor and mechanical flexibility [1]. As refined CNTs are however
expensive, expectations for mass-produced inexpensive SG-CNTs (super-growth CNTs) are
increasing for lowering the cost of CNT-based devices. Although SG-CNTs are inexpensive,
they include many defects that influences the thermoelectric effects of SG-CNTs. As a new
method to recover the thermoelectric performance of SG-CNTs, we now propose a palladium
nanoparticle decorated method.
It has been experimentally reported that by applying chemical adsorption to defective CNTs
by metal nanoclusters, the nanoparticles are selectively adsorbed on the defects of the CNTs
and eventually the power factor (PF) recovers [2]. However, the detail of the effect has not beenclarified yet. Thus, in this study, we theoretically investigate the effect of palladium adsorption
to various defects existing in a CNT on PF using first principles calculation. In our firstprinciples calculation, we adopted ATK 2017.2 software [3] based on the density functional
theory combined with the non-equilibrium Green's function method. We calculated the
conductivity, the Seebeck coefficient and PF of palladium-decollated CNTs with various shapes
and densities of vacancy defect.
As a consequence, we clarify that the vacancy defects in a CNT cause electron scattering andeventually the electrical conductivity decreases and then PF decreases. In addition, palladium
atoms are adsorbed to the vacancy defect sites, and the dangling bond is terminated by thepalladium atoms, whereby the scattering is suppressed, the conductivity of the CNT is
recovered, and consequently PF is improved. In the presentation, we would like to discuss the
optimization of palladium adsorption that could improve PF most.
[1] Y. Nakai, K. Honda, K. Yanagi, et al., Appl. Phys. Express, 7, 025103 (2014).
[2] N. Toshima, et al., 37th International and 16th European Conference on Thermoelectrics (ict2018:197517)[3] https://www.synopsys.com/silicon/quantumatk.html
Corresponding Author: Takahiro Yamamoto
Tel: +81-3-5876-1492
Web: http://www.rs.tus.ac.jp/takahiro/
E-mail: takahiro@rs.tus.ac.jp– 53 –

1P-14
Production of Carbon Nano-Materials by
the Bipolar-Pulsed Arc-Discharge Method○Tetsu Mieno1, Md Abul Kalam1, Kazi Hanium Maria2
1

Graduate School of Science & Technology, Shizuoka University, Shizuoka 422-8529, Japan2
Department of Physics, University of Dhaka, Dhaka-1000, Bangladesh

We have been studied to develop high-efficiency production of high-quality single-walled carbon
nanotubes (SWNTs) and other carbon nano-clusters (fullerenes, metallo-fullerenes, metal-encapsulated
carbon nano-particles (core-shell particles), magnetic particles by the arc discharge method.
In the usual arc-discharge method, about 50 % of carbon material re-deposits on a cathode, which isa large material-loss for the mass production. In the AC-arc discharge methods, the repetitive heatingcooling process makes large energy loss. To overcome these weak points, we have developed thebipolar-pulsed arc-discharge method (BPA method). [1 -3] Schematic of the reactor is shown in Fig.1.
In this method, 4 electric relays are used to reverse the electric polarity. The time variation of the input
electric power is almost constant, and the heating loss is suppressed. Figure 2 shows the Raman
spectra of the sample. the D band is very small andthe quality of SWNTs is good. We are now trying to
produce high-quality carbon nano-particles (including
magnetic nano-particles) by this method.

Fig. 1 Schematic of the bipolar pulsed arc
discharge reactor. [1]Fig. 2 Raman spectra of the sample (f= 0.050 Hz).
G-band, G-band and RB-modes.

[1] K. H. Maria & T. Mieno, Vacuum, "Synthesis of single-walled carbon nanotubes by low-frequency bipolar
pulsed arc discharge method", 113, 11-18 (2015).
[2] Md. K. Kalam & T. Mieno, "Pressure and discharge current dependence of production rate of single-walledcarbon nanotubes by the bipolar pulsed arc-discharge method", Fullerene, Nanotubes and Carbon
Nanostructures, 26, 458-464 (2018).
[3] T. Mieno, Jpn. Patent, 6386784, "The producer and the production method of carbon clusters", Aug. 17, 2018.
Corresponding Author: T. Mieno
Tel: +81-54-238-4750, Fax: +81-54-238-0993,

E-mail: mieno.tetsu@shizuoka.ac.jp– 54 –

1P-15
Effect of ethanol gas flow on synthesis of single-walled carbon nanotube
by a hot-wall chemical vapor deposition reactor using Ir catalysts○Ai Misaki1, Tomoko Suzuki1, Takahiro Maruyama1,2
1
2

Nanomaterials Research Center, Meijo University, Nagoya 468-8502, Japan
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Single-walled carbon nanotubes (SWCNTs) have various unique properties and potential for
applications to electronics devices in future. To realize CNT-FET, high-yield growth of small-diameter
SWCNTs. At present, several groups have reported vertically aligned SWCNTs (VA-SWCNTs) via thechemical vapor deposition (CVD) method using Fe and Co catalysts. We also reported VA-SWCNTs by
CVD using Co catalysts [1]. However, VA-SWCNTs grown from Fe or Co catalysts have diameterslarger than 1 nm, and either Al2O3 buffer layer or cocatalyst is necessary to reduce the diameter. Recently,
our groups reported growth of SWCNTs forests using cold-wall type CVD with Ir catalyst [2]. However,for scale-up of the growth, hot-wall CVD is desirable.
In this research, we attempted to grow VA-SWCNTs by alcohol catalytic CVD with an Ir
catalyst using a hot-wall CVD reactor. The growth time was fixed at 10 min. Fig. 1 shows dependenceof ethanol gas flow on Raman spectra of SWCNTs grown at 800ºC. The SWCNT yield reached its
maximum at 200 sccm. Taking into account Raman shifts of RBM peaks in Raman spectra and “Katauraplot”, the SWCNT diameters were estimated to be mainly distributed between 0.6 and 1.1 nm,
irrespective of ethanol gas flow. FESEM showed growth of VA-SWCNT forests, when the ethanol gas
flow was 200 sccm. We demonstrated that SWCNTs could be grown from an Ir catalyst using a hot-wall
CVD.
This work was supported in part by Private University Research Branding Project from the Ministryof Education, Culture, Sports, Science and Technology (MEXT), Japan. Part of this work was conductedat the Institute for Molecular Science (IMS), supported by the “Nanotechnology Platform” of the
Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
[1] A. Misaki et al. The 79th JSAP
Autumn, 19a-224B-5 (2018)[2] T.Okada et al. MRS Advances 4(2019) 225.
Corresponding Author: T. Maruyama
Tel: +81-52-838-2386, Fax: +81-52-8321179,
E-mail: takamaru@meijo-u.jp

Fig.1 Raman spectra of SWCNTs grown at 800°C form
Ir catalyst.

– 55 –

1P-16Growth of dense SWCNT from iron oxide nanoparticles for spin-capable
forestRyosuke Goto1, Kento Tabata1, Takayuki Nakano1, Kazuhiko Takahashi2, Yoku Inoue1○

1

Department of Electronics and Materials Science, Shizuoka Univ., Hamamatsu 432-8561, Japan2
Toyota Motor Co., Toyota 471-8571, Japan

In the conventional carbon nanotube (CNT) growthmethod, the catalyst thin film has been deposited on asubstrate by sputtering and the catalyst thin film has been
reduced under high temperature to form particles as CNT
catalyst. Therefore, the method is difficult to independently
control the catalyst density and size. In this study, CNT
forest was synthesized using iron oxide nanoparticles
synthesized by polyol method to control the size. We
examined the effect of the assembly method of
nanoparticles layer on the substrate and the process of CNT
growth in order to achieve highly dense CNT forest.
A thermally oxidized Si wafer deposited with an Al2O3
thin film by sputtering was used as a substrate. Iron oxide
nanoparticles were synthesized by the polyol method usingiron acetylacetonate (Fe(acac)3). The iron oxide
nanoparticle dispersion solution was prepared using amixed solution of hexane and toluene as a solvent. The
concentration was 0.005 mg/ml. The iron oxide
nanoparticles were dip-coated on the substrate. The
substrate was immersed and stayed in the solution for 5min, then the substrate was withdrawn with a speed of 10
μm/s. Then dried in air at room temperature. CNTs weregrown by thermal CVD using acetylene, hydrogen andargon as a carbon source, a reducing agent for iron oxide
nanoparticles and a carrier gas, respectively.
The average size of the iron oxide nanoparticles was 3.4
nm. Figure 1 shows the AFM image of iron oxide
nanoparticles on the substrate. The iron oxide nanoparticles
were dispersed on the entire surface of the substrate. Figure
2 shows an SEM image of the synthesized CNT forest. The
length of the CNTs was about 70 μm. Figure 3 shows theresult of Raman measurement of CNT. The intensity ratioof G band and D band was 8.9. Spin-capability of SWCNT
forest will be discussed.
Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356, Fax: +81-53-478-1356,
Web: http://cnt.eng.shizuoka.ac.jp/
E-mail: inoue.yoku@shizuoka.ac.jp– 56 –

Fig.1 AFM image of iron oxide
nanoparticles on substrate.

Fig.2 SEM image of CNT forest.

Fig.3 Raman spectrum of CNT.

1P-17Sub-nanometer diameter SWCNT Growth by Alcohol catalytic CVD○ Kamal P Sharma1,2, Daiki Yamamoto1, Aliza K. Sharma1, Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
2

Nanomaterials Research Center, Meijo University, Nagoya 468-8502, Japan

Single walled carbon nanotube (SWCNT) comprised of fore frontier application due to its
superior chemical, electrical and optical properties [1]. Chirality controlled SWCNT synthesis
is progressing very rapidly to surpass the post growth treatment process [2]. So synthesized
SWCNTs had more than 1 nm diameter and with very low yield. Narrow diameter distributed
SWCNTs possesses fewer chirality and synthesis of such tubes could be an alternativetechnique to solve the aforementioned problem. Here we challenge to address this issue by
utilizing simultaneously deposited Co and W onto SiO2 as a catalyst.
An ultrahigh vacuum (UHV) chemical vapor
deposition (CVD) system with nozzle in the proximity of
substrate though which ethanol is supplied as a chemical
vapor was used as a growth chamber as reported
elsewhere [3]. 0.2 nm Co and simultaneously deposited
0.2 nm Co and 0.4 nm W onto SiO2/Si (referred as
Method-A and Method-B respectively) were utilized as
growth substrates. 10-1 Pa ethanol vapor over the 10-6 Pabase pressure was utilized for 60 min at elevatedtemperatures. As synthesized SWCNTs under our
optimized condition were analyzed by Raman
spectroscopy, FESEM, and XPS.
Figure 1 (a) and Figure 1 (b) show the Raman spectraof SWCNTs grown for 60 min at 600 oC onto Method A
and at 800oC onto to Method B substrates respectively bykeeping other conditions unchanged and were the optimal
growth conditions. It is clearly observable in Figure 1 (b)that, from 250-500 cm-1 range, RBM peaks wereobserved indicating sub nanometer distributed SWCNT.
Inset to Figure 1 (a) and (b) show the corresponding
FESEM images.

Figure 1. Raman spectrum of SWCNT
grown

onto

SiO2/Si

by

ACCVD

technique at (a) 600 C by utilizing 0.2o

nm Co and (b) 800oC using 0.4nm
W/0.2nm

Co.

Inset

show

corresponding FESEM images.
This work was supported in part by Private University Research
Branding Project from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

[1] R. H. Baughman, et al. Science, 297, 787 (2002).
[2] F. Yang et al., Nature, 510, 522 (2014).
[3] T. Maruyama et al. Carbon 116, 128 (2017).

Corresponding Author: Takahiro Maruyama
E-mail: takamaru@meijo-u.ac.jp– 57 –

the1P-18Study of MWCNT/Cotton Composites and Development ofCompact Load Cells
Md. Abdul Momin1*, Mohammad Jellur Rahman2 and Tetsu Mieno1
12

Graduate School of Science & Technology, Shizuoka University, Shizuoka 422-8529, Japan
Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh.

We have developed functionalized carbon nanotubes by citric acid assisted oxygen plasma treatment [1],by which the nanotube (NT) ink is easily prepared. By dipping cotton fibers into the NT ink for several
times, MWCNT/cotton composites material is easily produced. Sandwiching the composites material
between two electrodes, we could developed compact load cells [2]. The load cells have high sensibility,
high durability, short response time and high reproducibility. It is conjectured that the mechanism of theload cell depends on the number of contacts among the MWCNT/cotton fibers at lower force region, andthe contact areas among the deformed MWCNT coated cotton at higher force region. The load cells showhigh sensitivity of about 180−0.20 kPa-1 for a pressure of p= 8.84 Pa−884 kPa (F=1.0 mN−100 N), which
is sufficient to precisely detect the basic movements of human and real-time sports performances. The
MWCNT/cotton load cells show high reproducibility in different harsh environments. The efficiency ofthe sensors remains almost the same at low and high temperatures and under low- and high-humidity
conditions. The load cell shows short response and relaxation times (τ1/2) of about 4.5 and 5 ms,
respectively, and almost zero hysteresis is observed. The load cells can measure characteristic signals
corresponding during walking, jogging, and standing conditions. An important application of the loadcells is to measure locus of the center of gravity of a human foot during standing position, walking, andrunning, which can be used to monitor sick, old, or rehabilitating people. Therefore, the load cells havestrong potential to be used as wearable force (or pressure)-monitoring devices, for healthcare tests,
rehabilitation, real-time sports activities.

Fig.1: The three sensors are set in a shoe insole.

[1]
[2]

Fig. 2: A locus of center of gravity during
standing. The measurement time is 10 s.

M. J. Rahman, T. Mieno, J. Nanometer. 2014, Article ID 508182, pp. 1−9 (2014).
M. A. Momin, M. J. Rahman, J. Nanometer. 2019, Article ID 7658437, pp. 1-15 (2019).

Corresponding Author: Md. Abdul Momin
Email: mamomin89bd@gmail.com
Mobile no: +8108051265887– 58 –

1P-19Study of Ion Adsorption Properties of Single-Walled Carbon Nanotubes byElectrochemical Quartz Crystal Microbalance Method○Mikako Takahashi, Masato Tsutsui, Yu Takeuchi,
Ayar Al-zubaidi, Yosuke Ishii, Shinji Kawasaki
Department of Life science and Applied Chemistry, Nagoya Institute of Technology,
Nagoya 466-8555, Japan

Electric double-layer capacitors (EDLCs) store energy through reversible ion adsorption at
the electrode−electrolyte interface. A major drawback of EDLCs is their lower energy density
compared to that of the batteries. In order to increase the energy density of EDLCs, it isnecessary to understand the ion adsorption mechanism in the electrode pore of EDLCs. In thisstudy, I used single-walled carbon nanotubes (SWCNTs) as electrode material, because
SWCNTs have simple and uniform nanostructure and work as good electrode model materials
to study ion adsorption mechanism. Quartz Crystal Microbalance (QCM) was used as ananalysis method of the mechanism of ion adsorption. QCM allows us to observe the masschange accompanied by ion adsorption, precipitation, desorption at the electrode with highsensitivity, so it is an effective method to understand the ion adsorption behavior in thenanopores of the electrode. [1]aCurrent / mA

0.1

0

−0.1

−8

[110 ]
6

Mass Change / g

So far, we have investigated the ion
adsorption/desorption behavior at inner tube spaceof SWCNTs with different diameters (1-2.5 nm).
Simultaneous
measurementsofcyclicvoltammogram and QCM were performed using athree-electrode cell. In the measurements, selfsupported SWCNTs sheets and activated carbon
fiber wrapped in platinum mesh ware used asworking and counter electrodes respectively.
Triethylmethylammonium
tetrafluoroborate(TEMABF4) dissolved in propylene carbonate(PC) was used as an electrolyte.
It became clear that the ion adsorption behavior
in TEMABF4/PC differs depending on the tube
diameter of SWCNTs. Furthermore, using
metallic/semiconducting SWCNTs electrodes, we
also examined how the electronic state of
SWCNTs affects the ion storage behavior.

b

5
4
3
2
1
0

−2

−1

0

1
+

Potential / V (vs. Ag/Ag )Fig. 1 (a) CV of semiconducting SWCNTs[1] Mikhael Levi et al. Nature Mater. 8, 872 (2009)

electrode (d = 1.5 nm) at a scan rate of 10
mV/s and (b) corresponding mass change

Corresponding Author: S. Kawasaki
E-mail: Kawasaki.shinji@nitech.ac.jp

obtained by QCM measurement.

– 59 –

1P-20High temperature capacitor electrode properties of nanocarbon materials
in ionic liquid electrolytes○Nanami Asai, Yosuke Ishii, Shinji Kawasaki
Department of Life Science and Applied Chemistry, Nagoya Institute of Technology, Nagoya
466-8555, Japan

Electric double layer capacitors (EDLCs) are attractive energy storage devices, due to theirhigh speed and low cycle degradation. Organic solvents, such as propylene carbonate, areused for the electrolyte of conventional EDLCs. However, organic solvents have low boilingpoints and flash points, and are difficult to use at temperatures above 100°C. In order todevelop EDLC which can be operated at high temperature above 100°C, it is necessary to
search for electrolytes that work well even at higher temperatures.
In this study, ionic liquid was used as electrolyte, and the influence of temperature on
EDLC
characteristics
ofporouscarbonelectrodewasinvestigated.
Triethyl-(2-methoxyethyl)phosphonium bis(trifluoromethanesulfonyl)imide (P222(2O1)-TFSI)
was used as the electrolyte. As a porous carbon electrode, activated carbon, SWCNTs (1 - 5
nm in diameter), and reduced graphene oxide (rGO) were used. A symmetric two-electrodecell was constructed using these electrodes. Constant current charge/discharge measurement
and electrochemical impedance measurement were performed in a temperature range of 25 250°C.
Fig. 1 shows the Nyquist plots for EDLC cell with (a) activated carbon electrodes, (b)SWCNT electrodes (d = 1.5 nm), and (c) rGO electrodes. As shown in Fig. 1, we observed
different shapes of the Nyquist plots depending on nanocarbon electrodes. The difference wasprobably caused by ion diffusion in nanopores of the carbon electrodes.

Fig. 1 Nyquist plots for symmetric EDLC cell with (a) activated carbon electrodes, (b) SWCNT electrodes (d= 1.5 nm), and (c) rGO electrodes.
[1] T. Sato et al. Electrochem. Acta, 49, 3603 (2004).
[2] K. Tsunashima et al. Electrochem. commun., 9, 2353 (2007).
Corresponding Author: N. Asai
E-mail: 30411003@stn.nitech.ac.jp– 60 –

1P-21
Catalytic properties of single-walled carbon nanotube/metal nanoparticles for CO2 reduction reaction㻌㻌○Sae Ishikawa, Shunya Inayama, Kohei Kondo, Yusuke Watanabe,
Yosuke Ishi, Shinji Kawasaki
Department of Life science and Applied chemistry, Nagoya Institute of Technology,
Nagoya 466-8555, Japan

With the development of industrial activities, environmental problems such as global
warming due to the increase of CO2 concentration and depletion of energy and carbon
resources are getting serious. Therefore, research on photocatalysts capable of reducing CO2
to carbon resources using solar energy has been actively conducted in the recent years. CO2
reduction is performed using excitation electrons obtained by irradiating a photocatalyst withlight. However, the conversion efficiency and selectivity of that approach are still low, and thepractical application of such photocatalysts is therefore difficult.
In this study, we tried to develop an electrodecapable of reducing CO2 using solar energy more
efficiently. It has been found that Cu functions
effectively as a CO2 reducing metal catalyst inelectrochemical CO2 reduction. Then we thoughtthat TiO2/ single-walled carbon nanotube(SWCNT)/Cu nanoparticle complex would be
effective to achieve CO2 reduction with lightenergy (Fig. 1). In this system, we expect efficient Fig.1 TiO2/SWCNT/Cu complex as a photocatalyst for CO2 reduction
charge separation to be achieved due to the factthat TiO2 absorbs light energy, while SWCNT sends excited electrons to Cu. In addition, a lotof Cu nanoparticles can be arranged by utilizing the high specific surface area of SWCNT.
Furthermore, we expect Cu nanoparticles to improve the selectivity of the reduction process
and the amount of the products.
We first loaded Cu nanoparticles of various sizes on the surface of SWCNT, synthesized
SWCNT/Cu nanoparticles complex, then examined the relationship between the size of Cu
nanoparticles and the selectivity of CO2 reduction process. Cu nanoparticles were synthesizedusing two methods: one is pulse electrodeposition, the other is vapor phase method (pyrolysis
of Cu complex). We attempted to control the size of Cu nanoparticles in both methods. We
used the resulting complex to evaluate the electrocatalytic activity using constant potential
electrolysis. We carried out these experiments in 1 M aqueous solution of KHCO3 (CO2 sat.),and we analyzed the gaseous species generated by the catalytic reaction using gas
chromatography (GC). We found that the vaper phase method allowed the synthesis ofsmaller nanoparticles than those synthesized in the pulse electrodeposition method, and had
improved selectivity as well.
Corresponding Author: S. Kawasaki

E-mail: kawasaki.shinji@nitech.ac.jp– 61 –

1P-22
Precise carrier density control of SWCNTs by controlled filling of donner
and accepter molecules○Guowei Wang, Takeshi Tanaka, Atsushi Hirano, and Hiromichi Kataura∗

Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Ibaraki 305-8565, Japan

Electric power generation devices can be fabricated by moving an electrolyte droplet on athin single-wall carbon nanotube (SWCNT) film. The carrier density of the SWCNT film
should be controlled precisely for the optimization of the system. In this study, we report thecontrolled filling of electron donner and accepter molecules into SWCNTs [1]. The
N,N’-bis(3-pentyl)perylene-3,4,9,10-bis(dicarboximide) (PBI) and 2,4-bis[4-(N,N-diphenyl
amino)-2,6-dihydroxyphenyl]squaraine (DPSQ) were selected as donner and accepter
molecules, respectively. PBI (or DPSQ) was mixed with coronene in a 1,4-dioxane, and thesolution was refluxed with dispersed SWCNTs (EC1.5, Meijo Nano Carbon, unsorted). The
SWCNTs were washed repeatedly to remove the residual chemicals on the surface andapplied for optical absorption measurements. As shown in Fig. 1, the dopant molecule density
inside the SWCNTs can be changed by simply adjusting the concentration ratio of dopant
molecule to coronene. This method represents a new way to control the carrier density of
SWCNTs precisely. We will show our recent results in the presentation.
This work was supported by JST CREST Grant Number JPMJCR16Q2, Japan.
Reference[1] T. Takenobu et al. Nat. Mater. 2, 683 (2003).
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-29-861-2786,
E-mail: h-kataura@aist.go.jp

Fig. 1: The relationship of the optical absorbance intensity of encapsulated dopant molecules(PBI (A) and DPSQ (B)) with the dopant molecule ratio in the mixture of dopant andcoronene molecules. Inset: the chemical structures of PBI (A) and DPSQ (B).

– 62 –

1P-23Novel Preparation Method of Carbon Nanobrushes using CO2 Laser
Ablation○Ryota Yuge, Kiyohiko Toyama, Mayumi Kosaka, and Hideyuki Sato
System Platform Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
Fibrous aggregates of single-walled carbon nanohorns, named as carbon nanobrushes(CNBs), were recently discovered [1-3]. The CNBs are receiving a lot of attention aselectrode materials for various devices such as nanocarbon-polymer actuators, electric
double-layer capacitors, and fuel cells since they have high electrical conductivity, highdispersibility in solutions, and large specific surface areas [1-3]. The CNBs are prepared by
CO2 laser ablation of an iron-containing carbon target under a nitrogen atmosphere at room
temperature. For the large scale production of nanocarbons such as carbon nanohorns (CNHs),
continuous laser ablation on spirally rotating target with a cylindrical form is very effective[4]. However, CNBs cannot be prepared continuously by this method since the catalyst
containing in the vicinity of laser spots evaporates during laser ablation and the carbon intarget also deteriorates. In this study, we succeeded in the continuous production of CNBs byusing a novel method. The structures of obtained samples were also investigated in detail.
Cylindrical targets of 17 mm in diameter and 70 mm in length were ablated along thelongitudinal direction of them by CO2 laser at room temperature under ambient pressure. The
CO2 laser was operated at the power of 3.2 kW in the continuous-wave mode. The moving
velocity of the target was controlled in the range of 0.13-0.47 cm/s. The gas pressure in thegrowth chamber was kept at 700-800 Torr by controlling the evacuation rate while the buffer
gas of nitrogen was kept at a flow rate of 10 L/min. The carbon targets containing the iron (1,3 at. %) were used.
The production rates of samples were 5-30 mg/s, which were larger than those of former
preparation method [1-4]. From scanning electron microscopy and scanning transmission
electron microscopy observations, CNBs were found to be prepared effectively when themoving velocity of target was slow. The CNB quantities prepared at 3 at. % of the ironconcentration were much larger than those at 1 at. %. Therefore, CNB quantities strongly
depend on the catalyst concentration. The details will be discussed in the presentation.
[1] R. Yuge et al. Adv. Mater. 28, 7174 (2016).
[2] R. Yuge et al. Carbon 122, 665 (2017).
[3] R. Yuge et al. Carbon 138, 379 (2018).
[4] T. Azami et al. J. Phys. Chem. C 112, 1330 (2008).
Corresponding Author: R. Yuge
Tel: +81-29-850-1566, Fax: +81-29-856-6137,
E-mail: r-yuge@bk.jp.nec.com– 63 –

1P-24Topological phases in graphene nanoribbons○Mari Ohfuchi1
1

Fujitsu Laboratories Ltd. & Fujitsu Limited, Atsugi 243-0197, Japan

Graphene nanoribbons (GNRs) with atomic precisioncontrol of their edge and width have been synthesizedfrom molecular precursors [1]. The topology of theirelectronic states has been paid attention, because it may
lead to novel applications. When two insulators ofdifferent topological classes are joined, localizedboundary states are produced in the band gap, which areso-called symmetry-protected topological (SPT) phases.
Recently, it has been reported [2] that semiconducting
GNRs of different width, edge, and end termination
belong to different electronic topological classes. They
have also shown that lateral junction geometry between
two GNRs of distinct topology produces localized

Fig. 1: (a) (b) Atomic geometries of
3AGNR-2(a) and -2(b). The gray andblack spheres represent carbon andhydrogen atoms. (b) Electronic
structures for 3AGNR-n(a). The
black circles indicate the energy
levels of the topological edge statesin the band gap (gray area).

junction states. Cut termination is considered to be ajunction with the vacuum. In this study, we investigate
the SPT phases in cut terminated GNRs, i.e., thetopological edge states, using density functional theory (DFT) calculations. When armchairgraphen nanoribbons (N = 3, 3AGNR) are teminated as shown in Fig.1(a) (3AGNR-2(a)), thetopological edge states appear in the band gap. Figure 2 shows that for 3AGNR-6(a), theanti-ferromagnetic (AF) state is slightly more stable than the ferromagnetic (FM) state. In the
AF state, each spin state is localized at each edge of cut terminated AGNRs.

Fig. 2: (a) Atomic geometry of 3AGNR-6(a). (b) (c) Schematic diagrams of the total energies and the electronic
structures for non-magnetic (NM), anti-ferromagnetic (AF), and ferromagnetic (FM) states. The arrows denotethe spin orientations. (d) Molecular orbitals of the topological edge states for the AF state.
This work was partly supported by JST, CREST (No. JPMJCR15F1).
[1] J. Cai et al., Nature 466, 470 (2010).
[2] T. Cao et al., Phys. Rev. Lett. 119, 076401 (2017).
Corresponding Author: M. Ohfuchi, Tel: +81-46-250-8194, E-mail: mari.ohfuti@fujitsu.com– 64 –

1P-25In situ XRD measurement of precipitation of multilayer graphene○Jumpei Yamada1, Yuki Ueda1, Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University,
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

In the precipitation method, multilayer graphene is grown only by annealing a sample onwhich a solid carbon and catalyst are deposited. In order to obtain high quality multilayer
graphene, it is necessary to understand the behavior of carbon atoms during annealing process.
X-ray diffraction (XRD) measurement is one of excellent methods to analyze inside of thecrystals. However, it is difficult to evaluate these carbons in an ordinary XRD equipment.
Therefore, in this study, the precipitation method was in situ monitored using X-ray
diffraction measurement (XRD) on BL11XU of SPring-8.
Amorphous carbon (a-C) (5 nm) and Ni (300 nm) layers were deposited on a sapphire(0001) substrate using electron-beam deposition. The sample was loaded in an ultra-vacuum
chamber and annealed. The sample was pre-annealed at 300 oC, and the temperature wasincreased to 850 oC at a rapid rate. After the annealing for 2hr 20min, the temperature wascooled to 300 oC at a rapid rate. During the whole process, the sample was continuously
monitored by using in situ XRD.
Fig.1 (a) shows an optical microscope image and the Raman spectrum of the sample. The
detections of G and G’ peaks indicate that multilayer graphene were successfully precipitated.
Fig.1 (b) shows the intensity dependence of graphite (002) diffraction peak during theannealing. The intensity increased with two steps. First, precipitation of carbon through grainboundaries occurred at a low temperatures. Then, the graphene was further precipitatedbecause carbon in Ni catalyst exceeded its saturation limit during the annealing at 850 oC. The
peak intensity was also significantly increased during the cooling period. This corresponds tothe precipitation of carbon dissolved in the Ni catalyst by cooling.

Fig. 1 (a) Optical microscope image and Raman spectrum of sample. (b) Intensity dependence ofgraphite (002) diffraction peak during direct precipitation of multilayer graphene.
Acknowledgement: This work was supported in part by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011.
The X-ray diffraction measurements at SPring-8 were performed with the approval of the Japan Synchrotron
Radiation Institute (Nos. 2016A1003, 2017B3584, 2018A3588, 2018B3588 and 2019A3589).
Corresponding Author: J.Yamada, E-mail: jjjjjjyyyyyy119@gmail.com– 65 –

1P-26
Direct growth of multilayer graphene on SiO2 / Si substrateby precipitation method using nanodiamond～Cooling rate dependence～○Tatsuya Kashio1, Asato Nakashima1, Daichi Yamamoto1,
Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Graphene is a promising material expected to be applied to various fields because of its
excellent properties. In order to apply graphene to devices, it is necessary to grow graphenewith good crystallinity even at low temperature. We have successfully grown graphene
directly on the desired substrate at 400 oC by precipitation method using nanodiamond [1].
However, low-temperature-grown graphene is still with poor crystalline. So, in this research,
we investigated the effect of the cooling rate on the precipitation of graphene using
nanodiamond.
The Si substrate was annealed in air to form 300 nm thick SiO2 on the surface. Further, Ni
was deposited to a thickness of 100 nm using an electron beam deposition, and thennanodiamond was applied. The sample was annealed at 600 oC for 30 minutes in a vacuum.
The cooling rate was changed among natural cooling, −10 oC/min, −5 oC/min, and −1 oC/min.
Thereafter, the Ni layer was etched off using nitric acid to reveal the graphene on the SiO2 / Si
substrate.
Each Raman spectrum in Fig. 1 shows that multilayer graphene is successfully grown
directly on SiO2. From Fig. 2, the D/G ratio decreased as the cooling rate decreased. The
crystallinity of graphene was improved with cooling rate decreased. This ascribes to the
reduction of low quality three-dimensional nucleation observed in the naturally cooled sample.
As a result, we succeeded in directly growth of high-quality multilayer graphene with D/Gratio of 0.36.








Fig. 1 Raman spectrum of multilayer graphene

Fig. 2 D/G ratio vs cooling rate dependenceowith growth temperature of 600 C[1] Daichi Yamamoto et al. The 79th JSAP Autumn Meeting 19p-311-11
Acknowledgment: This work was supported in parts by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011

– 66 –

1P-27
Influence of the Au clusters at the graphene pore edge on the vibrational
spectra of nucleotides translocating through the pore
○Tatiana Zolotoukhina1, Momoko Yamada 1
1

Department of Mechanical Engineering, University of Toyama, Toyama 930-8555, Japan

Recently, surface-enhanced Raman scattering nanoprobes have shown tremendous
potential in oncological imaging owing to the high sensitivity and specificity of theirfingerprint-like spectra. As current Raman scanners rely on a slow, point-by-point spectrum
acquisition, there is an unmet need for faster imaging to cover a clinically relevant area inreal-time [1]. The gradual development of single-molecule resolution in the tip-enhanced andsurface-enhanced Raman spectroscopy (TERS & SERS) promotes experimental work on
DNA and protein identification by above methods and approaches a single oligomer
resolution [2-3].
Therefore, studying vibrational spectra of the nucleotides in the dynamic interaction withthe metallic nanoparticles (NP) located close to graphene nanopore can combine translocation
localization and nucleotide interaction enhancement due to (1) graphene LJ interaction, (2) Au
LJ interaction. The spectral maps of the nucleotides were studied by molecular dynamics(MD) simulation. Fourier transfer of the density of states (DOS) let us obtain the spectra ofvarious bonds in reaction coordinates for DNA nucleotides during transport through the
1.5nm graphene nanopore and interaction with the Au NP at the edge of the pore. We test thenucleotide-graphene-NP system to understand whether the LJ interaction with Au NP at thetranslocation time can influence the changes in the vibrational spectra calculated by MD. The
frequencies that can serve as markers of the corresponding Au – nucleotide interaction will be
evaluated. Presence of the NP as plasmon enhances in the experimental SERS/TERS systems
being in the LJ interaction with the measured molecule has a probability to influence thetransient spectra. The size and shape of the NP were taken to be a stable configuration [4].
The Au20 and Ag20 nanoparticles were pyramid-shaped and optimized in ab initio DFT
GGA calculations with the b3pw91 basis set. The obtained configuration was further relaxedby the MD calculation with the EAM potential and free boundary conditions during 3000step
with Δt=0.1fs at T=300K to get stable nanoparticle samples that can be used on the top of
the graphene sheet.
Au

Ag

Fig1 Optimized by DFT GGA calculations Au20 and Ag20 nanoparticles [1]㻌S. Pal, A. Ray, C. Andreou, Y. Zhou, et al., Nature Comm., 10, 1926 (2019)[2] L.-J. Xu, Zh.-Ch. Lei, J. Li, et al., JACS, 137, 5149-5154 (2015).
[3] D.M. Sagar, L. E. Korhoj, K. B. Hanson, et al., Small 14, 1703165 (2018)[4] J. Wang, G. Wang, J. Zhao, Chem. Phys. Lett., 380, pp.716–720 (2003).
Corresponding Author: T. Zolotoukhina
Tel: +81-76-445-6739, Fax: +81-76-445-6739, E-mail: zolotu@eng.u-toyama.ac.jp– 67 –

1P-28
Co-Intercalation of Metal Chlorides in Large-Area Bilayer Graphene○Amane Motoyama1, Kenji Kawahara2, Rika Matsumoto3, and Hiroki Ago*,1,2
1

IGSES, Kyushu University, Fukuoka, 816-8680, Japan, 2 Global Innovation Center (GIC), Kyushu
University, Fukuoka, 816-8680, Japan, 3 Faculty of Engineering, Tokyo Polytechnic University, Kanagawa
243-0297, Japan

Bilayer graphene (BLG) has been attracting a significant interest, because it shows
excellent properties, such as a tunable band gap [1] and angle-dependent superconductivity[2]. BLG has a well-defined unique 2D nanospace which can be used to intercalate
molecules or ions to alter the physical properties. Several intercalants have been reported for
BLG, such as metal chlorides (FeCl3 [3] and MoCl5 [4]), Ca and Li ions [5,6]. However,most of the previous works used small flakes of BLG, limiting the practical applications. In
the case of graphite, co-intercalation was reported to give significant improvement in theelectrical conductivity [7]. Here, we demonstrate the co-intercalation of two different metal
chloride molecules into large area BLG produced by a CVD method.
Large-area BLG sheet was grown by CVD using a Cu-Ni(111) alloy thin films as catalyst[8]. The Raman spectroscopy analysis indicated the presence of both AB- and twist-stacked
BLG, with a high bilayer coverage (>80%). After transferring the as-grown BLG onto a
SiO2 substrate, both AlCl3 and CuCl2 were simultaneously intercalated in the BLG sheet invacuum. Figure 1a shows the Raman spectra of AB- and twist-stacked BLG before and after
the intercalation process. Both the AB- and twist-stacked regions exhibited the upshift of the
G-band to >1612 cm-1, indicating effective intercalation. We found that the intercalation
occurs more frequently in the twisted areas as compared with the AB-stacked areas. Under
our experimental condition, around 70 % of the graphene area was intercalated with AlCl3 andCuCl2 (see Fig. 1b). This work presents a new strategy to tune the physical properties of
BLG, which can be developed to various applications thanks to large-area availability of BLG
sheets.

Fig. 1. (a) Raman spectra of AB- and twist-stacked BLG before and after the intercalation process with
AlCl3 and CuCl2. (b) Histogram of the G-band position after the intercalation process.
References: [1] Y. Zhang et al., Nature, 459, 820 (2009). [2] Y. Cao et al., Nature, 556, 43 (2018). [3] I.
Kharapach et al., Adv. Mater., 24, 2844 (2012). [4] H. Kinoshita et al., Adv. Mater., 29, 1702141 (2017). [5] S.
Ichinokura et al., ACS Nano, 10, 2761 (2016). [6] M. Kühne et al., Nat. Nanotechnol., 12, 895 (2017). [7] R.
Matsumoto et al., Synth. Met. 222, 351 (2008). [8] Y. Takesaki et al., Chem. Mater., 28, 4583 (2016).
Corresponding: H. Ago (Email: h-ago@gic.kyushu-u.ac.jp)– 68 –

1P-29
Role of the Hall conductivity in the optical absorption of circularly
polarized light
F. R. Pratama, M. S. Ukhtary, R. Saito1
1Department of Physics, Tohoku University, Sendai 980-8578, Japan
Two-dimensional (2D) hexagonal materials, such as h-BN, silicene, &MoS2 have promising applications in valleytronics and optical devices due to theoccurrence of valley polarization (VP) and circular dichroism (CD). The electronic
structure of the 2D materials can be generally expressed by the Haldane model[1], in which the inversion (I) and time-reversal (T) symmetries are broken. The
broken I and T cause the band gap opening with different magnitude at the K and
K’ points.
Recently, Ghalamkari et al. [2] showed by the dipole approximation that
VP as well as perfect CD occur exclusively in the material given by the Haldane
Hamiltonian at the energy gap of the K and K’ points. However, they did not
discuss the absolute value of optical absorption probability as a function of laser
excitation energy, which should be important for discussing the real materials. In
this presentation, by using the Kubo formula [3], we calculate the longitudinal andthe Hall optical conductivities of the Haldane model as a function of the photon
energy. We found that the VP and perfect CD can be explained the Hall
conductivities of the Haldane materials. We also found that the origin of the CD
is the absence of the Joule heat for the left- or right-handed circularly polarized
light that does not absorb the light, due to the cancellation of the longitudinal andthe Hall current. We generalize our formula to include the absorption of ellipticallypolarized light and the depolarization effect in the materials, where the Hall
conductivity enhances the depolarization effect.
[1] F. D. M. Haldane, Phys. Rev. Lett. 61, 2015 (1988).
[2] K. Ghalamkari et al. J. Phys. Soc. Jpn. 87, 063708 (2018).
[3] L. A. Valkovsky, A. A. Varlamov, Eur. Phys. J. 56, 281 (2007).

Corresponding author:
F. R. Pratama
E-mail: pratama@flex.phys.tohoku.ac.jp– 69 –

1P-30Electrostatic properties of positively charged graphene edges terminated byfunctional groups○Yanlin Gao, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba,
Tsukuba, 305-8571, Japan
Field ion microscopy (FIM) is a simple microscopic technique providing theatomic-resolution image of the protruded surface of bulk materials and edges/tips of low
dimensional materials. Rare gas atoms, which have been introduced to the sharp tips or edges
of a material, are ionized and accelerated by the strong positive electric field, forming
atomic-resolution images on the screen. These images reflect the atomic structure of surfaces,
edges, or tips of matters. To give microscopic dynamics of the ionized rare gas atoms outside
the graphene, it is mandatory to know the electrostatic properties of positively charged
graphene edges. In our previous work, the field emission of electrons from graphene edges issensitive to the edge shapes and terminations [1,2]. However, theoretical knowledge about theelectrostatic properties of positively charged graphene edges in terms of their edge shapes andtermination is absent to date. Thus, in this work, we aim to clarify the electrostatic propertiesof functionalized graphene edges under the positive electric field, using the density functional
theory with the effective screening medium methods, to simulate the FIM of thefunctionalized edge of graphene. Fig. 1 shows the calculation model simulating the FIM ofgraphene edges terminated by various functional groups, where the holes are injected into thegraphene edges by the counter electrode.
Our calculations showed that electrostatic properties of graphene edges under the positiveelectric field strongly depend on the edge shapes and terminations. The zigzag edges cause
shallower potential and stronger electric field around the edge than the armchair edges underholes injection. Furthermore, we also calculated the distribution of the injected holes ingraphene and found that accumulated
hole also depends on the edge shape andtermination. For zigzag edges, holes areprimarily distributed at the terminatededges in accordance with theelectrostatic potential and electric field.
While, for armchair edges, the holes are
not only accumulated in the functionaledges, but also penetrated inside
Fig.1 calculation model simulating the FIM of GNRs
graphene.
Reference[1] Y. Gao and S. Okada, Appl. Phys. Lett. 112, 163105 (2018)[2] Y. Gao and S. Okada, Carbon 142, 190-195, (2019)
Corresponding Author: Y. Gao
TEL: +81-29-853-5921, FAX: +81-29-853-5924
E-mail: ylgao@comas.frsc.tsukuba.ac.jp– 70 –

2P-1
Influence of capacitance on field intensity in nano-scale filed emittersbased on carbon nanotubes○Keita Funayama1, 2, Hiroya Tanaka1, Jun Hirotani2, Keiichi Shimaoka1,
Yutaka Ohno2, 3, Yukihiro Tadokoro1
1

Toyota Central Research & Development Laboratory, Inc., Nagakute 480-1192, Japan2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

Nano-mechanical electromagnetic receiver for sensing devices
and wireless communication has investigated [1-3]. These
innnovative systems translate the received electromagnetic signal
into field emission (FE) current. This widely known physicalphenomenon is described by Fowler-Nordheim theory i.e.
𝐼𝐼𝐼𝐼 = 𝐶𝐶𝐶𝐶1 𝛽𝛽𝛽𝛽 2 𝜉𝜉𝜉𝜉ex 2 exp[− 𝐶𝐶𝐶𝐶2 ⁄𝛽𝛽𝛽𝛽𝜉𝜉𝜉𝜉ex ] where 𝐶𝐶𝐶𝐶1 and 𝐶𝐶𝐶𝐶2 are theconstants. Enhancement factor, 𝛽𝛽𝛽𝛽 , is a key parameter indesigning of FE devices. This factor is traditionally discussed interms of the shape of the emitter. Although the counter electrodeis assumed as an infinite size of plate and its surface isconsidered as flat, the anode in nano-scale FE devices becomesnarrow and thin electrode. Here, we investigate the influence ofgeometrical properties of the counter electrode on theenhancement factor.
We fabricated the CNT emitters, whose counter Fig. 1 SEM image of the nano-emitterelectrode has different surface area, on a wafer. The made of CNT. (w, n) = (a)(300nm, 0)
surface area was varied by changing electrode width or (b)(50nm, 0), and (c)(300nm, 3).
number of corrugations as shown in Fig. 1. The
nano-emitters were fabricated by electron-beam (EB)lithography, EB deposition, wet-etching and criticaldrying [3]. Our experimental results in Fig. 2 show that𝛽𝛽𝛽𝛽 increases as the surface area of the counter electrodes,
𝑆𝑆𝑆𝑆Anode , increases. The reason is the increasing of thecapacitance between the tip and the counter electrode,
𝐶𝐶𝐶𝐶 = 𝑄𝑄𝑄𝑄/𝑉𝑉𝑉𝑉, where 𝑄𝑄𝑄𝑄 is the total induced charge on the
tip of emitter. In the case of the corrugated counterelectrode, the value of 𝛽𝛽𝛽𝛽 , which was calculated
theoretically from 𝐶𝐶𝐶𝐶 , showed the same trend as
obtained experimentally. The results indicate that the Fig. 2 The dependence of 𝛽𝛽𝛽𝛽 on thecapacitance between the tip of emitter and counter surface area of counter electrode.
electrode should be considered carefully as well as theshape of the emitter to evaluate total enhancement effect in nano-FE devices.
[1] K. Jensen, J. Weldon, H. Garcia, A. Zettl, 2007 Nano Letters, 7, 11, 3508-3511.
[2] Y. Tadokoro, H. Tanaka, M. I. Dykman, 2018 Scientific Reports, 8 11284.
[3] K. Funayama, H. Tanaka, J. Hirotani, K. Shimaoka, Y. Ohno, Y. Tadokoro, 2019 IEEE Access 7 57820.
Corresponding Author: K. Funayama
E-mail: funayama@mosk.tytlabs.co.jp– 71 –

2P-2
Growth of single-walled carbon nanotubes
on chemically etched graphene layers by cold-wall CVD using Ir catalysts
Aliza Khaniya Sharma1, Kamal P Sharma2, Mayumi Saeki1, Takahiro Saida1,2,
Shigeya Naritsuka3, Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
2
Nanomaterials Research Center, Meijo University, Japan3
Department of Materials Science and Engineering, Meijo University, Japan
1. Introduction
The widespread application of layered graphite as a promising nano-platform for biomedical,
environmental and electronics have attracted much interest in the manufacturing of graphene and its
derivatives. [1] The formation of graphene and carbon nanotube (CNT) hybrid structure is highly
desirable for future nanoscale electrical and mechanical devices. Previously, our group succeed insynthesizing small diameter single-walled CNTs (SWCNTs) on the graphene layer by using Pt as acatalyst. [2]. However, the density of SWCNTs were not so high. In this study, to increase the density,
we attempt to grow SWCNTs on graphene layers by alcohol catalytic chemical vapor deposition(ACCVD) using an Ir a catalyst.
2. Experimental procedure
A few graphene layers were peeled out from highly oriented pyrolytic graphite (HOPG) bymechanical exfoliation method and were transferred onto the Si/SiO2 substrate. Graphene/SiO2/Si
substrate was then immerged in a mixed acid solution [(60%HNO3:35%HCl) =1:3, v/v] for 20 min,followed by rinse with methanol, acetone and de-ionized water. Ir catalyst particles were depositedby a pulsed arc plasma gun. The nominal thickness of Ir was 0.2 nm. SWCNT growth was carried out
at 800oC under an ethanol pressure of 40 Pa. The growth SWCNTs were characterized by Raman
spectroscopy and FESEM.
3. Results and Discussion
Fig. 1 (a,b) show Raman Spectra of SWCNTs
grown on chemically etched graphene layers. Radial
breathing mode (RBM) peaks were observed,
indicating that SWCNTs were grown on graphene
layers. Fig1. (c) shows an FESEM image of the
SWCNT grown under the same condition mentioned
above. The image of SWCNTs grown on graphene isshown in inset. We will also discuss the density ofgrown SWCNTs.
This work was supported in part by Private
University Research Branding Project from the
MEXT, Japan.
[1] Y. Sang et.al. Nano 13 (2018)1850071.
[2] R. Ghosh et al. Chem. Commun. 51 (2015) 8974.
Corresponding Author: T. Maruyama
Phone: 81-52-838-2386, Fax: 81-52-832-1172
E-mail: takamaru@meijo-u.ac.jp– 72 –

Fig. (a, b) Raman spectra of SWCNTs grownon chemically etched graphene layers. (c)FESEM image of SWCTs grown on
chemically etched graphene layers.

2P-3
Control of high-harmonic generationin single-wall carbon nanotubes by gating○Hiroyuki Nishidome1, Kohei Nagai2, Kent Uchida2, Yota Ichinose1, Kengo Fukuhara1,
Junko Eda1, Hitomi Okubo1, Yohei Yomogida1, Koichiro Tanaka2, 3, Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Kyoto University, Kyoto 606-8502, Japan
3
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501, Japan
High-power laser sources in mid-infrared and terahertz (THz) region enable us to observe
the extreme nonlinear optical phenomena in solid, such as high-harmonic generation(HHG) [1]. HHG is attracting a lot of interest for their uses of ultra-fast processing and shortwavelength light source. However, the generation mechanisms of the high harmonics in solid
has not been elucidated yet. It is suggested that there are two dominant dynamics which generate
high-harmonics in solid. One is carrier dynamics within a band (intraband dynamics) and theother is the dynamics between bands (interband dynamics) [2]. The amount of carrier in solid
will strongly influence on HHG, but how the carrier density affects HHG is not simple. For
example, increase of carrier density may enhance the HHG through intraband dynamics, but at
the same time, it may suppress the HHG through interband dynamics by Pauli blocking process.
Therefore, it is important to experimentally reveal relationships between the carrier density,
electronic structure and HHG. Here this study investigated the Fermi-level dependence of HHG
by using single-wall carbon nanotubes with a selected electronic structure.
We prepared a high-purity (6,5) thin film
(bandgap Eg = 1.26 eV) and employed side-gating
device using ionic liquid (TMPA-TFSI) as anelectrolyte to tune Fermi level by shift of gate
voltage, VG.
Figure 1 shows the high-harmonic spectra withpositive shift of VG (electron injection). Interestingly,
we found the increase and the decrease of harmonics
as the increase of the amount of electron. We
observed the enhancement of the 3rd harmonics, but Fig. 1 High-harmonic spectra with
Fermi-level (gate voltage (VG)) shift.
the suppression of 5th and 7th harmonics. To
understand the background precisely, we calculated
HHG spectra by using the Liouville equation andsucceeded to reproduce qualitatively the experimental
results. We found that we can control the HHG bygating in both amplificative and reductive ways.
[1] S. Ghimire et al., Nat. Phys. 7, 138 (2010)[2] O. Schubert et al., Nat. Photon., 8, 119 (2014)
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494,
Fax: +81-42-677-2483,
E-mail: yanagi-kazuhiro@tmu.ac.jp

Fig. 2 Fermi-level dependence of highharmonic intensity– 73 –

2P-4
Photoluminescence study of graphene quantum dots esterified with benzyl
alcohol and their application to solar cells○Suzuka Tachi, Toshiki Sugai, Shota Kuwahara
Department of Chemistry, Toho University, Chiba 274-8510, Japan㻯㼡㼞㼞㼑㼚㼠㻌㼐㼑㼚㼟㼕㼠㼥㻌㼇㼙㻭㻛㼏㼙㻞㼉Graphene quantum dots (GQDs), nanometer-sized graphene fragments, have potential forthe efficient photon conversion material due to their tunable optical and electronic properties,
as well as upconversion optical characteristics [1, 2]. However, quantum yields (QYs) of
GQDs are relatively low, which limits the general use of GQDs for application as luminescentmaterials. Herein, we report the enhancement of QY of GQDs by esterifying GQDs withbenzyl alcohol, achieving the suppression of the flexibility arising from vibration and rotationof the surface functional groups on the edges of GQDs. Furthermore, GQDs esterified withbenzyl alcohol (GQD-Bn) were utilized as the sensitizer of solid-state dye-sensitized solar
cells (DSSCs), and GQD-sensitized solar cells (GQDSSCs) were successfully fabricated.
GQDs were prepared by using single-walled carbon nanotubes (CoMoCAT; Aldrich) via
oxidation process in the mixture of concentrated H2SO4 and HNO3. Then, the synthesized
GQDs in water were refluxed with benzyl alcohol [3], resulting in replacing carboxyl groups
on the GQDs with benzyl ester groups. After neutralization, we extracted organic soluble
GQD-Bn into toluene, which was utilized for the sensitizer in GQDSSCs as previously
reported [4]. GQDs esterified with 1-hexanol (GQD-Hex), aliphatic ester groups, were also
used for the fabrication of GQDSSCs.
Fig. 1 shows photoluminescence excitation-emission-intensity map of GQD-Bn. The
maximum emission wavelength was 432 nm, independent on the excitation wavelength andred-shifted by around 30 nm from an emission wavelength in GQD-Hex. The relative QYs of
GQD-Bn and GQD-Hex were 67 and 10 %, respectively. Fig. 2 shows the current
density-voltage (J-V) curves of GQDSSCs fabricated with GQD-Bn and GQD-Hex. All
parameters, short-circuit current density, open-circuit voltage and fill factor, of GQDSSCs
were improved by using GQD-Bn as the sensitizer.

Fig. 1 Photoluminescence
excitation-emission-intensity
map of the GQD-Bn. Insets: photograph of GQD-Bn intoluene taken under UV illumination (= 410 nm) (left)
and TEM image of GQD-Bn (scale bar: 10 nm) (right).

㻝㻳㻽㻰㻙㻮㼚

㻜㻚㻤㻳㻽㻰㻙㻴㼑㼤

㻜㻚㻢
㻜㻚㻠
㻜㻚㻞
㻜
㻜

㻜㻚㻝

㻜㻚㻞
㻜㻚㻟
㼂㼛㼘㼠㼍㼓㼑㻌㼇㼂㼉㻜㻚㻠

Fig. 2 J−V curves of GQDSSCs
with GQD-Bn (solid line) and
GQD-Hex (dashed line).

[1] S. Chen, et al., J. Mater. Chem. C, 6, 6875 (2018). [2] S. Zhuo, et al., ACS Nano, 6, 1059 (2012).
[3] S. Tachi, et al., submitted.
[4] S. Tachi, et al., The 55th FNTG general symposium, 3P12 (2018)
Corresponding Author: S. Kuwahara, Tel: +81-47-472-4442, E-mail: syouta.kuwahara@sci.toho-u.ac.jp– 74 –

㻜㻚㻡

2P-5Interface electroluminescence from WS2/WSe2 in-plane heterostructures○Naoki Wada1, Jiang Pu2, Wenjin Zhang3, Zheng Liu4, Hirofumi Matsuoka2, Kazunari
Matsuda3, Yusuke Nakanishi1, Yutaka Maniwa1, Yuhei Miyauchi3, Taishi Takenobu2,
Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Advanced Energy, Kyoto University, Uji, 611-0011, Japan
4
Inorganic Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
Heterostructures of transition metal dichalcogenides (TMDCs) are an attractive system torealize high-performance devices such as light-emitting diodes and tunnel field-effecttransistors. To realize such devices, it is important to understand the electrical and opticalproperties of TMDC-based heterointerface. Recently, electroluminescence (EL) has been
observed for MoS2/WSe2 in-plane heterostructures by using electric-double layer technique[1]. In the previous study, the samples show EL peak only from monolayer MoS2 due tostrain-induced modulation of band alignment. However, less study has been conducted forsuch strain effect on the optical spectra of TMDC-based heterointrerface.
In this study, we report the characteristic EL from the strained heterointerface of
WS2/WSe2 in-plane heterostructures. WS2/WSe2 in-plane heterostructures were grown on
SiO2/Si substrates by salt-assisted chemical vapor deposition (CVD). To observe EL, we havefabricated the EDLEDs with ion gel. The devices show linear light emission from theinterface by applying voltage (Fig.1b). The EL spectra show two peaks, which can be
assigned to exciton peaks of WS2 and WSe2. Interestingly, the PL peaks are shifted comparedwith these for PL spectra. These shifts can be explained by lattice strain in WS2/WSe2 latticemismatched interface. Furthermore, valley polarization was also observed for WS2 exciton
peak even at room temperature probably due to valley magnetoelectric effect [2]. The present
results indicate that TMDC-based heterointerfaces provide a unique system to control and use
their unique electrical and optical properties.

Fig.1 (a) Schematic of structure and energy band diagram of WS2/WSe2-based EDLED device after theformation of p-i-n junction by electric double layer doping. (b) Optical and electroluminescence (EL) images,and (c) EL and photoluminescence (PL) spectra of WS2/WSe2-based EDLED device.
[1] J. Pu et al., Adv. Mater., 29, 1606918 (2017). [2] J. Lee et al., Nat. Mater., 16, 887891 (2017).
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp– 75 –

2P-6
Simulating van der Waals Heteroepitaxy
Using Classical Mechanical Approach○Mitsuhiro Okada1, Yosuke Uchiyama2, Tetsuo Shimizu1, Toshitaka Kubo1, Ryo Kitaura2
1

2

Nanomaterials Research Institute, AIST, Tsukuba 305-8565, Japan
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan

Recent works on two-dimensional materials such as transition metal dichalcogenide (TMD)
and hexagonal boron nitride (hBN) made van der Waals (vdW) heteroepitaxy regain the
spotlight. vdW heteroepitaxy, i.e., “heteroepitaxial growth driven by interatomic force” hasbeen observed on chemical vapor deposition growth on TMD onto hBN (TMD/hBN) system[1] (Figure 1). However, it is still unclear how the occurrence of vdW heteroepitaxy in the
TMD/hBN system depends on the TMD cluster size.
In this work, we investigated how MoS2 cluster size
affected the vdW heteroepitaxy of MoS2/hBN system bytheoretical calculation. To calculate the total energy of
optimal configuration of the MoS2/hBN system, we usedclassical mechanics where the interlayer total energy canbe described as a sum of the Lennard-Jones (LJ) potential
and the Coulomb potential. This method allows us to treata system containing large number of atoms (e.g.,
Figure 1. An optical microscope image
Mo675S1350 and B10800N10800), which cannot be treated onof MoS2 grown on hBN.
density functional theory (DFT). One of the models of the
MoS2/hBN system is shown in Figure 2. We found thatconsidering only LJ potential is enough to simulate the
MoS2/hBN structure: the calculated interlayer distance issimilar to that obtained from DFT (~0.472 and ~0.494 nm[2], respectively). Interestingly, the dependence of thecalculated total energy as a function of the stacking angle
and the cluster size (Figure 3) shows that structures witha stacking angle of 0 or 60 degree are strongly stabilized
Figure 2. Structure model ofwhen the cluster size matches the lattice constant of
MoS2/hBN system.
MoS2/hBN moiré superlattice (~four fold larger than thatof the MoS2 lattice constant. The stabilized clusters aremarked with a circle in Figure 3). This indicates thatmoiré superlattice affects the heteroepitaxial growth at
early stage.
[1] M. Okada et al. ACS Nano, 8, 8273 (2014).
[2] A. P. Rooney et al., Nano Lett., 17, 5222, (2017).
Corresponding Author: M. Okada and R. Kitaura
Tel: +81-29-861-2880, +81-52-789-2477
Fax: +81-29-862-3550, + 81-52-747-6442
Web: https://unit.aist.go.jp/nmri/index.html
http://nano.chem.nagoya-u.ac.jp/japanese/
E-mail: mi.okada@aist.go.jp, r.kitaura@nagoya-u.jp

Figure 3. Total energy of MoS2/hBN asa function of the stacking angle and its
cluster size dependence.

– 76 –

2P-7
Molecular beam epitaxy growth of transition-metal-dichalcogenide based
two-dimensional heterostructures○ Yuya Murai1, Nanami Ichinose1, Satoshi Yasuda2, and Ryo Kitaura1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
2
Advanced Science Research Center, Tokai 319-1195, Japan

The purpose of this study is to develop a new class of two-dimensional materials,
two-dimensional superlattices (2D-SLs). The concept of "superlattices", periodic junctions ofdifferent materials, has been developed in research on compound semiconductors, leading todiscoveries of novel phenomena such as negative resistance and Bloch oscillation[1]. The
concept of “superlattices” can be extended to yield new type of 2D materials, 2D-SLs, whichgive a widespread platform to explore physics and chemistry at two-dimension. In thispresentation, we focus on development of crystal growth method of 2D-SLs.
In this study, we used transition metal dichalcogenides (TMDs) as components of 2D-SLs.
Various TMDs (more than 40 different TMDs are available) enable us to construct a wide
variety of TMD-based 2D-SLs. For crystal growth of 2D-SLs, we employed the molecularbeam epitaxy (MBE) method [2]. In the MBE method, source materials are supplied as highly
directional molecular beams, and therefore, source supply can be instantaneously switched by
the simple shutter operation. In this work, we have performed MBE growth of 2D-SLs
composed of MoSe2 and NbSe2/WSe2 by sequentially switching Mo supply to Nb/W supply
under continuous supply of Se.
Figure 1 shows a dark field transmission electron
microscope (DF-TEM) image of the 2D-SLs composedof MoSe2 and NbSe2. In this dark field image, thegraphite substrate shows almost no contrast whereas
2D-SLs give strong image contrasts; the hexagonal
white contrasts correspond to 2D-SLs composed of
NbSe2 and MoSe2. The feed rates of Mo/Nb were 0.28
Å/s and 0.56 Å/s. First, NbSe2 was grown for 7 minutes,
and then, MoSe2 and NbSe2 were grown alternatively
with interval of 1.5 minutes. As a result, it is consideredthat a 10 nm periodic superlattice is formed. Although
periodic contrasts arising from the periodic lateralFig.1 DF-TEM image fabricatedstructure are not visible, we confirmed the existence ofheterostructure
Nb and Mo atoms by energy dispersive X-ray analyses.
The small difference in the image contrast arise from small difference in atomic numbers ofMo and Nb. For detailed structural characterization, we are working on scanning tunnelingmicroscope observations of 2D-SLs.
[1] L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970).
[2] Hotta, T. et al., Appl. Phys. Lett., 109, 133101 (2016)
Corresponding Author: R. Kitaura
Tel: +81-52-789-2482, Fax: +81-52-747-6442
Web: http://nano.chem.nagoya-u.ac.jp/
E-mail: r.kitaura@nagoya-u.jp– 77 –

2P-8
Machine-learning approach for predicting low temperature valley
polarization landscapes in 2D semiconductors○Kenya Tanaka, Kengo Hachiya, Wenjin Zhang, Kazunari Matsuda, Yuhei Miyauchi
Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan,

Atomically thin two-dimensional (2D) semiconductors such as monolayer (1L) MoS2 andWSe2 (transition metal dichalcogenide) have attracted much attention, partially because of theirpotential applicability for valleytronics. Once a circularly polarized photons are absorbed bythese materials, valley polarized excitons can be generated by virtue of their structures withbroken inversion symmetry and large spin-orbit coupling [1-3]. The application of thisphenomenon for opto-electronics, called opto-valleytronics, have also been of strong interest in
the broad scientific community including condensed matter physics and more. In recent years,
numbers of studies have been reported on the valley exciton properties in 2D semiconductors.
The exciton valley polarization observed at low-temperature (LT) normally shows considerable
spatial heterogeneity on the sample, mainly because the exciton characteristics are very
sensitive to the local heterogeneity in the surrounding environment due to local defects, strain,
carrier doping, and surface molecular adsorption. This heterogeneity is highly problematic forboth fundamental scientific research and the future applications of these materials invalleytronic devices. However, the existence of this heterogeneity has been neglected in mostof the previous studies, because a complex correlation among various local conditions and theresultant exciton valley polarization remain unclear, and there has been no establishedprocedure to address this problem.
Here we demonstrate the applicability of employing machine-learning-based analysis topredict LT exciton valley polarization heterogeneity in 1L-WSe2. We performed confocal
photoluminescence (PL) mapping at 300 K (RT), and the exciton valley polarizations at eachcorresponding position (Fig. 1) were measured using circular polarization resolved PL
spectroscopy at 15 K (LT). The data sets extracted from these observations were used as the
input and output data to create regression forest for the machine-learning prediction using theRandom Forest [4] algorithm. The created regression forest could well predict the spatial
distribution of the LT exciton valley polarization in a 1L-WSe2 that was not used for the learningof the regression forest, only from the RT PL data set of the sample. Furthermore, we
numerically obtained the degree of importance of each input variable [5]. We will discuss that
this procedure is quite helpful for examining the physics that shape the spatially heterogeneous
valley polarization landscape of 1L-WSe2.

Corresponding Author: Y. Miyauchi
Tel: +81-774-38-3463
E-mail: miyauchi@iae.kyoto-u.ac.jp

Valley polarization[1] K. F. Mak et al., Nat. Nanotechnol. 7, 494 (2012).
[2] Y. Miyauchi et al., Nat. Commun. 9, 2598 (2018).
[3] K. Shinokita et al., Adv. Funct. Mater. 1900260 (2019).
[4] L. Breiman, Mach. Learn. 45, 5 (2001).
[5] K. Tanaka et al., submitted.

Fig.1 Exciton valley polarization map of a 1LWSe 2 sample at 15 K. Scale bar indicates 3 μm.

– 78 –

2P-9
Single-layer MoS2 nanogenerator for harvesting clean electric energy
from dynamic motion of liquid○Adha Sukma Aji1, Ryohei Nishi1, Hiroki Ago2, Yutaka Ohno1
1

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University,
Nagoya 464-8601, Japan
2
Global Innovation Center (GIC), Kyushu University,
Fukuoka 816-8580, Japan

Seeing the fact that energy demand in the world is always
increasing, the researches on direct energy harvesting fromthe ambient environment are gaining a considerable amountof interest. As liquid kinetic energy is one of the mostabundant clean energy sources, a method to directly convert
liquid of motion into electricity is preferable. [1,2] Here, we
demonstrate a novel MoS2 nanogenerator to generate
electricity from the liquid of movement.
In this work, the CVD grown large-area single-layer
MoS2 was used as active materials where the droplets glided
on top of it. When droplets of 1 M NaCl were dropped on
MoS2 surface inclined at 45°, they automatically glided
because of the hydrophobic nature of MoS2 surface, as
illustrated in Figure 1a. As the droplets glided, opencircuit voltages over 5 V were generated by MoS2 surface,
as shown in Figure 1b. This is the largest voltage
generated by liquid motion on their surfaces compared withother 2D material-based nanogenerator reported so far.
We also advanced our MoS2 nanogenerator to harvest theenergy of the sea wave. The experimental setup is shownin Figure 1c, where half of MoS2 channel were submergedin simulated seawater (0.6 M NaCl). When the sequencesof wave were generated, the height of seawater surface
which contacted to MoS2 surface was changed periodically.
Figure 1d shows the capability of MoS2 nanogenerator,
which it could convert waving movement to electric energy
up to 7.5 nW. The mechanism of the electric generation
will be discussed in the presentation.
In summary, we have investigated the promisingcapability of MoS2 as energy harvester from the liquidmovement.
[1] J. Yin et al., Nat. Nanotechnol. 9, 378 (2014).
[2] S. Kwak et al., ACS Nano 10, 7297 (2016)
Corresponding Author: Y. Ohno
Tel & Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp
Acknowledgment: JST/CREST (JPMJCR16Q2)

Fig. 1. (a) Schematic view of the device.
(b) Generated voltage induced by liquidmovement on MoS2. (c) Schematic view ofthe experimental setup where the liquidsurface moves up and down. (d) Generated
power induced from liquid movement
shown in (c)– 79 –

2P-10Infrared Spectral Simulation of Isotopically Manipulated C60○Tomonari Wakabayashi1, Takamasa Momose2, and Mario E. Fajardo3
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan
Department of Chemistry, University of British Columbia, Vancouver V6T 1Z1, Canada
3
Munitions Directorate, US Air Force Research Laboratory, Eglin AFB, FL 32542-5910,
USA
1

2

High-resolution infrared (IR) absorption spectra of C60 were reported previously by our
research group using solid para-H2 matrices at 2 K [1]. Spectral features observed for fourIR-active vibrational modes were analyzed by possible quantized rovibrational transitions
with missing levels due to boson-exchange symmetry restrictions. In this work, we reanalyze
the spectra by another idea of the mixture of a number of isotopomers present in the C60
sample. For the natural isotopic abundance of 1.1% 13C, binomial fractions of theisotopologues are 51% for 12C60, 34% for 13C12C59, 11% for 13C212C58, and 2.5% for 13C312C57.
Molecular orbital calculations are performed for vibrational spectra of all possible isotpomers
13
Cn12C60-n up to n = 3, leading to a better agreement with the observed spectra. Molecularorbital (MO) calculations are performed for harmonic frequencies and IR absorption
intensities at the B3LYP/6-31G(d) level of density functional theory (DFT). Target molecules
are the icosahedral (Ih) 12C60, the singly substituted 13C12C59 of Cs symmetry, 23 isotopomersof the doubly substituted 13C212C58, and 303 isotopomers of the triply substituted 13C312C57.
Figure 1 shows calculated IR absorption spectra of one of the four IR-active vibrationalmodes of C60, namely T1u(3) observed at 1184 cm-1 [1,2]. For 12C60, the transition is triply
degenerate as T1u in Ih symmetry, showing a single peak as the top trace in the inset. The
degeneracy is lifted by substitution of 12C bya heavier 13C atom in 13C12C59, resulting inthe split peaks toward lower frequencies as
the second trace in the inset. For doubly andtriply substituted molecules, split patterns
are different for different substitutional sites
in a molecule, resulting in multiple bands ofpeaks. Weighted sum spectra reproduce well
the observed trend of increasing intensity of
the low-frequency bands with increasing
abundance of 13C. The absolute IR emission
band strength is discussed for the abundanceof C60 in the planetary nebula [3].
[1] N. Sogoshi et al. JPCA 104, 3733 (2000).
[2] W. Krätschmer et al. CPL 170, 167 (1990).
[3] J. Cami et al. Science 329, 1180 (2010).
Corresponding Author: T. Wakabayashi
Tel: +81-6-4307-3408, Fax: +81-6-6723-2721,
E-mail: wakaba@chem.kindai.ac.jp

Fig. 1. Calculated IR absorption spectra of the T1u(3)mode of C60. Inset shows spectra of isotopologues
having n 13C atoms, 13Cn12C60-n of n = 0, 1, 2, and 3,
containing 1, 1, 23, and 303 distinct isotopomers,
respectively. Traces in the main panel are weighted
sum of the inset spectra for three 13C abundances.

– 80 –

2P-11Synthesis of Benzothieno[60]fullerenes Using Fullerenyl Cation
Intermediates○Yutaka Matsuo,1,2,3 Yun Yu3, Xiao-Yu Yang3, Hiroshi Ueno4, Hiroshi Okada2
1

Institutes of Innovation for Future Society, Nagoya University, Nagoya 464-8603, Japan
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
3
University of Science and Technology of China, Hefei 230026, China
4
Creative Interdisciplinary Research Division, The Frontier Research Institute for Interdisciplinary
Sciences (FRIS), Tohoku University
2

Benzothieno[60]fullerenes were synthesized using fullerenyl cations as key
intermediates.[1] The reaction proceeded through a nucleophilic attack of the sulfur atom as a
weak nucleophile to the fullerenyl cation electrophile (Figure 1).[2] A monoarylated fullerene,(2-methylthiophenyl)hydro[60]fullerene, C60ArH (Ar = C6H4-SMe-2, and so on; four
derivatives) was subjected to deprotonation with KOtBu to form a fullerenyl anion ArC60–,
followed by oxidation using I2 to generate a fullerenyl cation ArC60+ leading to intramoleculardemethylative cyclization via fullerene cation–S interaction to the product (Figure 2).
Electrochemical and computational studies revealed slightly narrower band gap of thiscompound than usual fullerene derivatives because of the relatively high-lying HOMO of the
fused thieno moiety.
S

weak nucleophile

S

S
oxidation

modification

I2
organofullerenyl anion

organofullerenyl cation
enhanced electrophilicity

Figure 1. Concept of this study. The oxidized fullerene (fullerenyl cation) undergoes nucleophilic attack by
the sulfur atom.
I–

R

H
S

S

S

R

R

1) base2) I 2

fullerenyl cation intermediate benzothieno[60]fullerene

Figure 2. Synthesis of benzothieno[60]fullerenes.
[1] Y. Matsuo, Y. Yu, X.-Y. Yang, H. Ueno, H. Okada, H. Shibuya, Y. S. Choi, Y. W. Jin, J. Org. Chem. 2019,84, 6270–6277.
[2] H.-S. Lin, Y. Matsuo, Chem. Commun. 2018, 54, 11244–11259. (Feature article)[3] X.-Y. Yang, H.-S. Lin, I. Jeon, Y. Matsuo, Org. Lett. 2018, 20, 3372–3376
Corresponding Author: Y. Matsuo
Tel: +81-52-747-6722
Web: http://www.matsuo-lab.net
E-mail: yutaka.matsuo@chem.material.nagoya-u.ac.jp– 81 –

2P-12Chirality dependence of the tensile strengths of carbon nanotubes○Akira Takakura1,2,3, Kou Beppu4, Taishi Nishihara1,2,3, Akihito Fukui4,
Takahiro Kozeki5, Takahiro Namazu4, Yuhei Miyauchi1,2,3, Kenichiro Itami1,2,6
JST-ERATO, Itami Molecular Nanocarbon Project, Nagoya University, Chikusa, Nagoya
464-8602, Japan.
2
Graduate School of Science, Nagoya University, Chikusa, Nagoya 464-8602, Japan.
3
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan.
4
Department of Mechanical Engineering, Aichi Institute of Technology, Yakusa, Toyota, Aichi
470-0392, Japan.
5
Graduate School of Mechanical Engineering, University of Hyogo, Himeji, Hyogo
671-2201, Japan.
6
Institute of Transformative Bio-Molecules (WPI-ITbM), Nagoya University, Chikusa,
Nagoya 464-8602, Japan.
1Single-walled carbon nanotubes (SWNTs) theoretically possess ultimate intrinsic tensile
strengths of more than 100 GPa, among the highest in existing materials [1]. However, theexperimentally reported values were always lower than the theoretical values, and even worse,
they exhibited a considerable degree of scatter [2, 3]. Here we report the first direct
measurements of the ultimate tensile strengths of individual chirality-defined SWNTs [4]. The
strengths of 16 SWNTs measured in this study exhibited the strengths scattered in the range of
25-66 GPa (Figs. 1a and b). We found that the observed trend can be understoodcomprehensively via the intrinsic structure dependent inter-atomic stress, together with its
concentration at structural defects existing in the real SWNTs (Fig. 1c). We developed
empirical formula to predict the tensile strengths, and it highlights the target nanotube
structuresofselective
synthesis,
armchairornear-armchair species withrelatively small diameters, tofabricateultimately
high-strength materials using
SWNTs. In the presentation,
we will discuss the fracture
mechanism and derivation ofan empirical formula toFig. 1 The tensile strengths plotted as a function of the chiral angle (a),predict the ultimate tensile
diameter (b) and f(θ)d0.5, where f(θ) is given by (1/2)[(1-ν)+(1+ν)cos2θ]strength of real SWNTs.
(ν = 0.16 is the Poisson ratio of graphite) (c).

[1] T. Dumitrica, M. Hua and B. I. Yakobson, Proc. Natl. Acad. Sci. USA, 103, 6105 (2006).
[2] M. F. Yu et al., Science, 287, 637 (2000).
[3] M. S. Wang, D. Golberg and Y. Bando, Adv. Mater., 22, 4071 (2010).
[4] A. Takakura et al., Nat. Commun., 10, 3040 (2019).
Corresponding Author: Y. Miyauchi
Tel: +81-774-38-3463
E-mail: miyauchi@iae.kyoto-u.ac.jp– 82 –

2P-13In-plane and out-of-plane thermal conductivityof single wall carbon nanotube buckypapers
with selected electronic structure○Hiroyuki Matsuo 1, Kan Ueji1, Yohei Yomogida 1, Takashi Yagi2, Kazuhiro Yanagi 1
1

2

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Department of Physics, National Institute of Advanced Industrial Science and Technology, Tsukuba,
Ibaraki,305-8563, Japan

In recent years, understanding of the relationship between electrical conduction and thermal
conduction in a material with flexibility is becoming of great importance to optimize theperformance of flexible electronics and devices. For example, single-wall carbon nanotube(SWCNTs) have attracted a lot of interest as thermoelectric materials, and in order to maximize
the thermoelectric performance, we need to prepare SWCNT thin films with large electricalconductivity and small thermal conductivity. Electrical conduction strongly depends on theelectronic structure of the SWCNT and the location of the Fermi level. However, relationships
among electronic structure, location of Femi-level, and thermal conductivity have not been
elucidated yet. In addition, in the thin film form, it is important to understand the difference ofin-plane and out-of-plane thermal conduction.
Here, in this study, we investigated the in-plane and out-of-plane directions of thermal
conduction in SWCNT buckypapers with selected electronic structure. In the in-plane thermal
conduction, both the conduction through long axis direction of the nanotube and the hopping
interface contribute to the thermal conduction. However, in the out-of-plane conduction, theheat conduction through the hopping interface will play dominant role on the thermal
conduction. Then we investigated how the electronic structure influences on the in-plane andout-of-plane thermal conductions.
Metallic and semiconducting buckypapers were prepared from SWCNT (MEIJO nanocarbon ARCSO) through density gradient ultracentrifugation purifications. The thermal
diffusivity was measured by periodic-heating method using a laser. We evaluated heat flowfrom through the phase delay of black-body radiation from the back surface of the sample. All
the measurements were performed in a vacuum. Thermal conductivity is represented κ =Cp × α × ρ (Cp :specific heat ,α:thermal diffusivity, ρ：density). We measured thermal diffusivity in the inplane, α‖, and the out-of-plane directions, α⊥, then, we
evaluated the anisotropy ratio of thermal conductivity‖ /⊥  by taking the ratio of thermal diffusivity(α‖/α⊥). Fig.1 shows the temperature dependenceof the anisotropy ratio of three SWCNT freestanding films (mixture, semiconductor, metal).
As shown here, we found the anisotropy ratio
depends on the electronic structures. The detailsof background will be discussed.

Figure1 ： Temperature dependence of theCorresponding Author: K. Yanagi, Tel: ＋81-42-677-2494,
E-mail: yanagi-kazuhiro@tmu.ac.jp– 83 –

anisotropy ratio of three SWCNT free standing
films (mixture, semiconductor, metal).

2P-14
Solving the Thermoelectric Trade-Off Problem
with Metallic Carbon Nanotubes○Yota Ichinose1, Akari Yoshida1, Kanako Horiuchi1, Kengo Fukuhara1, Natsumi Komatsu2,
Weilu Gao2, Yohei Yomogida1, Manaho Matsubara3, Takahiro Yamamoto3,
Junichiro Kono2,4,5 and Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0372, Japan
Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
3
Department of Liberal Arts, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
4
Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA
5
Department of Material Science and NanoEngineering, Rice University, Houston, Texas 77005, USA2

One dimensional (1D) materials are predicted to
exhibit the largest thermoelectric performance becauseof van Hove singularity (vHs) [1]. Particularly,
semiconducting SWCNTs are paid attention to
because of their much larger Seebeck coefficient S.
However, it is widely recognized that there is atrade-off between electrical conductivity  and S;
increasing  decreases S by shifting the Fermi level(EF). And thus, this trade-off has hindered improving
the power factor P = S2. However, metallic SWCNTs
also possess vHs. One should observe P enhancement
if EF is tuned with vHs because of the intrinsic large of metallic SWCNTs. Here, we investigated the , S
Fig. 1 Optical absorbance spectra.
and P of high-purity semiconducting and metallic
SWCNTs as a function of EF.
First, we prepared highly purified semiconducting
SWCNTs (6,5) (>99%) and metallic SWCNTs (>99%).
These samples were systematically mixed with ratiosof 10:0 (#1), 9:1 (#2), 5:5 (#3) and 0:10 (#4),
respectively (Fig. 1). In the thermoelectricmeasurement, we used electrolyte gating technique toshift EF precisely [2].
As a result, in highly metallic sample (#4),
simultaneous increase of  and S was observed, while
semiconducting sample (#1) showed the typicaltrade-off. The P of metallic sample (#4) almost
reached that of semiconducting sample (#1) (~60
Wm-1K-2) (Fig. 2). Moreover, when we aligned
metallic SWCNTs (#5) to obtain higher  , it Fig. 2 Relationship between power factor andelectrical conductivity.
exhibited the largest P (~300 Wm-1K-2); exceeding
the highest semiconducting purity sample (#1). We
experimentally demonstrated that we can overcome the conventional trade-off using metallic
SWCNTs.
[1] Hicks & Dresselhaus, Phys. Rev. B 47, 16631 (1993). [2] K. Yanagi et al., Nano letters 14 (11), 6437 (2014).
[3] X. He, et al., Nat. Nanotechnol. 11, 633 (2016).
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494, Fax: +81-42-677-2483,
E-mail: yanagi-kazuhiro@tmu.ac.jp– 84 –

2P-15
Theoretical Study on Thermoelectric Properties of
Nitrogen-Doped Carbon Nanotubes with Various Diameters○Manaho Matsubara1, Kenji Sasaoka2, Takahiro Yamamoto1,2
1

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
2
W-FST Center RIST, Tokyo University of Science, Tokyo 125-8585, Japan

Significant enhancement of thermoelectric performance is expected to be achievedby utilizing one-dimensional (1D) materials [1]. Single-walled carbon nanotubes (SWNTs)
are potential candidates for 1D nanostructures with high thermoelectric performance as well
as flexibility and lightweight. To achieve CNT-based thermoelectric devices, both n-type andp-type semiconducting CNTs are required. We focus on nitrogen-doped (N-substituted)
SWNTs as a typical n-type semiconducting SWNTs, and we have investigated thermoelectric
properties of N-substituted SWNTs with various diameters using Kubo-Lüttinger theory forthermoelectric effects [2-4]. For small-diameter SWNTs with large band gap, theN-substituted SWNTs exhibit high thermoelectric power factor at the room temperature
originating from high-mobility carrier in the conduction band edge with sharp DOS due tovan Hove singularity of 1D materials, which are excited from the impurity bands (i.e., Nbands). On the other hands, for the large-diameter SWNTs with small gap, the thermally
excited electrons in the conduction band from the valence band are not negligible even atroom temperature. We found that the excitation affects the thermoelectric properties ofN-substituted SWNTs. We explain these properties in the presentation.
[1] L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B47, 16631 (1993).
[2] T. Yamamoto and H. Fukuyama, J. Phys. Soc. Jpn. 87, 024707 (2018).
[3] T. Yamamoto and H. Fukuyama, J. Phys. Soc. Jpn. 87, 114710 (2018).
[4] M. Ogata and H. Fukuyama, J. Phys. Soc. Jpn. 88, 074703 (2019).

Corresponding Author: M. Matsubara
Tel: +81-3-5876-1492,
E-mail: mmatsubara@rs.tus.ac.jp– 85 –

2P-16
Towards high yield growth of single-walled carbon nanotubes
by alcohol catalytic CVD using Pt catalyst○Daiki Yamamoto1, Kamal P Sharma1, Takahiro Saida1,2, Shigeya Naritsuka3,
Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
Nanomaterials Research Center, Meijo University, Japan

2
3

1.

2.

3.

Department of Materials Science and Engineering, Meijo University, Japan

Introduction

Single walled carbon Nanotubes (SWCNTs) are one-dimensional materials, having various
potential for future nanoelectronics. So far, we have reported SWCNT growth by alcohol catalytic
CVD (ACCVD) using Pt catalysts and succeeded in growing small-diameter SWCNTs [1]. However,
the yield of SWCNTs grown from Pt catalysts was not so high. In this study, we carried out SWCNT
growth by ACCVD using Pt catalyst and succeeded in increasing the yield by optimizing the heating
rate to the growth temperature.

Experimental procedure

Pt catalysts were deposited onto SiO2/Si, which were used as growth substrate. The nominal
thickness was 0.3 nm. An ultra-high vacuum (UHV) chemical vapor deposition (CVD) system wasused for SWCNT growth. The substrates were heated to the growth temperature under H2 atmosphereof 1×10-3 Pa. Then, ethanol gas was supplied through nozzle onto the substrates, as previously
reported, to grow SWCNTs [1]. The heating rate was set to be higher than that in our previous report[1]. The grown SWCNTs were analyzed by Raman spectroscopy

Result and Discussion

Fig.1a is Raman spectra of SWCNTs grown from Pt catalysts at 800°C under an ethanolpressure at 1×10-1 Pa. The growth time was 10 min. Radial breathing mode (RBM) peaks wereobserved, indicating that the diameters of grown SWCNTs were distributed from 0.62 to 1.4 nm.
Fig. 1b shows Raman spectra in the high-frequency region. Despite the short growth time, Raman
spectra shows strong G band peaks. Considering that the intensity ratio of G band peak to Si phonon
peak at 500 cm-1 (G/Si ratio) is 2.18, SWCNT yield was higher than that in our previous study about
SWCNT growth from Pt catalysts. In addition, the G/D ratio is 7.7, indicating that the quality of
SWCNTs were improved. By increasing the heating rate, we succeeded in increasing the growthamount of SWCNTs at 800℃. We will discuss the effect of growth condition on the property ofgrown SWCNTs.
This work was supported in part byPrivate University Research Branding
Project from the Ministry of Education,
Culture, Sports, Science and Technology(MEXT), Japan.
[1] T. Maruyama et al. carbon 96 (2016) 6.
Corresponding Author: T.Maruyama
Phone: 81-52-838-2386,
Fax: 81-52-832-1172
E-mail: takamaru@meijo-u.ac.jp

Fig. 1 Raman spectra of SWCNTs grown from Pt catalysts ina) the RBM region and b) high frequency region.

– 86 –

2P-17
Synthesis of vertically aligned single walled carbon nanotube
by conventional cold-wall CVD system using Ir catalysts○Mayumi Saeki1, Kamal P Sharma1,2, Takahiro Saida1,2, Shigeya Naritsuka3,
Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
Nanomaterials Research Center, Meijo University, Japan

2
3

1.

Department of Materials Science and Engineering, Meijo University, Japan

Introduction

Single-walled carbon nanotubes (SWCNTs) have many unique properties and potential
for various electronic device applications. At present, several groups have reported the growthof vertically aligned SWCNTs (VA-SWCNTs) via the chemical vapor deposition (CVD) using
Fe and Co catalysts. Recently, our groups reported growth of VA-SWCNTs forests by alcohol
gas source method from Ir catalysts [1]. However, the inplane uniformity of SWCNT length
was not so good, because carbon source was supplied through a thin nozzle. In this study, we
attempt to grow SWCNTs using conventional cold-wall type CVD system to improve theuniformity of SWCNT length.

2.

Experimental Procedure
Ir catalyst was deposited on 3×14 mm SiO2/Si substrates by a pulsed arc plasma gun.
The SWCNT growth was performed by a conventional cold-wall type CVD system using
ethanol as carbon source. The growth temperature was set to be 800℃. The grown VASWCNT was confirmed by using Raman Spectroscopy and FESEM.

3.

Result and Discussion
Fig. 1(a) and (b) show the Raman spectra of the SWCNTs grown at 40 Pa ethanolpressure for 10 min. Fig.1 (c) shows the ethanol pressure dependence of G/Si intensity ratioin Raman spectra. The G/Si intensity became its
maximum at an ethanol pressure of 40 Pa,
indicating that this pressure was optimal. Fig.
1(d) Shows cross-sectional FESEM image ofthe VA-SWCNT grown under the optimalethanol condition. We will also discuss theuniformity of SWCNT length.
This work was supported in part by Private
University Research Branding Project from the
Ministry of Education, Culture, Sports, Scienceand Technology (MEXT), Japan.
[1] T. Okada et al. MRS Advances, 4 (2019)
225.
Corresponding Author: T. Maruyama
Fig.1(a,b) show the Raman spectra of SWCNTs,
Phone: +81-52-838-2386,
and (c) shows ethanol pressure dependence of the
Fax: +81-52-832-1172
G/Si intensity ratio. (d) Cross-sectional FESEM
E-mail: takamaru@meijo-u.ac.jp
image of a VA-SWCNT forest.

– 87 –

2P-18Interaction between defective carbon nanotubes and surfactant molecules○Hideyuki Jippo1, Mari Ohfuchi1
1

Fujitsu Laboratories Ltd. & Fujitsu Limited, Atsugi 243-0197, Japan

We reported [1] how differently sodium dodecyl sulfate surfactants behave on metallic andsemiconducting carbon nanotubes (CNTs) to reveal the mechanism of metal/semiconductor
separation of CNTs. In this study, we investigate the adsorption of surfactant molecules,
cholate and dodecyl sulfate ions, onto defective CNTs using ab initio methods. The
semiconducting (6, 5) single-wall CNTs having one-atom hole with COO (COO-CNTs) arecompared to pristine CNTs.
Figure 1 shows the obtained three optimized
geometries of dissociated cholate and Sodium (Na) ionson COO-CNTs. Counter Na ions are put onto the
opposite side of the CNTs as shown in Fig. 1. The
dodecyl sulfate (DS) ions were also examined in thesame configurations. The adsorption energies of cholate
and DS ions onto pristine and COO-CNTs are
summarized in Table 1. We found that the adsorptionenergies of DS ions are larger than those of cholate ionsboth for the pristine and COO-CNTs. The largest
adsorption energy is obtained on the pristine CNTs forboth of the cholate and DS ions. Among the COO-CNTs,
the far adsorption site from the defect (COO-(c)) shows Fig. 1: Optimized geometries ofdissociated cholate and Na ions on
the largest adsorption energy. The adsorption energies COO-CNTs per unit cell.
are smaller on the sites close the defect or on the defect.
Thus the ionized surfactants are less likely to adsorb defective CNTs. This result may explain
experiments of the pristine/defective separation of the CNTs.
Table 1. Adsorption energies (kcal/mol) of Cholate and DS ions onto (6, 5) CNTs
CholateDSpristine

COO-(a)COO-(b)COO-(c)-36.90-55.63-26.99-31.37-20.99-19.40-30.89-44.79This work was partly supported by JST, CREST (No. JPMJCR15F1).
[1] M. Ohfuchi, J. Phys. Chem. C 122, 4691 (2018).
Corresponding Author: H. Jippo, Tel: +81-46-250-8843, E-mail: jippo.hideyuki@fujitsu.com– 88 –

2P-19Growth, etching, and regrowth of individual single-walledcarbon nanotubes: Isotope labeling study○Taiki Inoue1, Bunsho Koyano1, Shun Yamamoto2, Keigo Otsuka2,3, Rong Xiang1,
Shohei Chiashi1, Shigeo Maruyama1,4
Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Wako,
351-0198, Japan
3
Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Wako,
351-0198, Japan
4
Energy NanoEngineering Lab, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, 305-8564, Japan1

2

Toward broad applications of single-walled carbon nanotubes (SWCNTs), the growthefficiency of SWCNTs should be improved. For that, it is important to understand the effects
of additive molecules on catalyst activity and growth rates of SWCNTs especially at thesingle nanotube level. In this study, we performed interrupted growth of SWCNTs bytentatively stopping ethanol supply and introducing only Ar, Ar/H2, or Ar/H2/H2O. We
analyzed the time evolution of individual SWCNT growth by an isotope labeling techniquewhich we have recently proposed [1]. While all SWCNT terminated growth after interruption
with Ar, the interruption with Ar/H2 caused the regrowth of SWCNTs once ethanol was
reintroduced. In the case of Ar/H2/H2O, SWCNTs were etched back with moving in thereverse direction of growth, followed byrestarting growth (Fig. 1). We conducted analysis (a) Gas
Ar/H /
Ar/H2/EtOH
Ar/H2/H2O EtOH
of radial breathing mode peaks of SWCNTs andLabel # 0 0 # 0 1 # 1 0# 1 1 # (b)found that the chirality was preserved even after
100
etching and regrowth. While the growth rates of
SWCNTs were unchanged by the interruption
50
with Ar/H2, they were increased after theinterruption with Ar/H2/H2O. These result would0
suggest strategies to encourage the efficient
0
5
10
15
CVD time (min)growth of SWCNTs [2].
0 1 #1#
20 µm

1

1

#

SWCNT length (µm)

2

(c)

EtOH
catalyst
SWCNT
with labels[1] K. Otsuka et al., ACS Nano 12, 3994 (2018).
[2] B. Koyano et al., submitted.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
Web: http://www.photon.t.u-tokyo.ac.jp
E-mail: maruyama@photon.t.u-tokyo.ac.jp

grow

H2O
etch

EtOH
grow

Fig. 1 (a) Growth curve of an SWCNT
interrupted with Ar/H2/H2O. (b) Corresponding
Raman G-band mapping image. (c) Schematic
image of growth, etching, and regrowth of
SWCNTs.

– 89 –

2P-20Bright electroluminescence from air-suspended carbon nanotubes○W. Terashima1, H. Machiya1,3, K. Otsuka1, A. Ishii1,2, and Y. K. Kato1,2
1

Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama, 351-0198, Japan
2
Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics,
Saitama, 351-0198, Japan3
Department of Electrical Engineering, The University of Tokyo, Tokyo, 113-8656, JapanEL (102 counts/s)

EL intensity (103 counts/s)

Carbon nanotube light emitting diodes (CNT-LEDs) are expected to be useful for compact
optical sources operating at telecommunication wavelengths. Previously, we have reported
electroluminescence (EL) with narrow linewidth (~8 meV) comparable to photoluminescence(PL) from air-suspended CNTs within split-gate devices [1], but EL intensity is still low. The
diffusion length of excitons in CNTs is estimated to be several hundred nanometers, which isvery long compared to those of conventional bulk semiconductors [2]. It is therefore possiblethat EL intensity has been suppressed for the ~1-m-long CNT in the device used in theprevious report, where many of the generated excitons could have recombined nonradiatively
at the point of contact with the substrate. In this study, we investigate nanotube length
dependence on EL intensity to obtain insight for increasing EL intensity from air-suspended
CNT-LED structures.
CNT-LED device structures are fabricated on
20
8silicon-on-insulator substrates with 0.7 to 3.7Gate voltage
18
±1V
6
±2V
m-wide trenches. CNTs are synthesized by
16
±3V
±4V
ethanol chemical vapor deposition at 800 oC for
4
14
±4.5V
±5V
1 minute. PL and EL signals from CNT-LED
12
2±6V
structures are detected by an InGaAs photodiode1001100 1200 1300 1400 1500 1600
array. All measurements are performed at room
8
Wavelength (nm)temperature in a nitrogen ambient.
6
Figure 1 shows gate voltage dependent
4
integrated EL intensity and the spectra from an
2
LED structure with a 4-m-long CNT with
0
0
1
2
3
4
5
6
chirality (9, 8) at a drain voltage of ~15 V. We
Gate voltage (V)observe sharp spectra where the intensity
increases with the gate voltage. The maximum Figure 1: A Plot of integrated EL intensity as a
EL intensity in the best device reaches up to function of gate voltage for an LED structure with
30,000 counts/s, which is about 7.5 times a 4-m-long (9,8) CNT. (Inset): Gate voltage
higher than our previous work [1]. Details of dependent EL spectra at a drain voltage of 15 V.
the nanotube length dependence on EL
intensity from air-suspended CNT-LED structures will be discussed.
Work supported by JSPS (KAKENHI JP16H0592, JP17H07359), MEXT (Nanotechnology Platform), and RIKEN(Incentive Research Project). H.M. acknowledges support by RIKEN Junior Research Associate Program and
JSPS Research Fellowship. K.O. acknowledges support by JSPS Research Fellowship.
[1] N. Higashide, M. Yoshida, T. Uda, A. Ishii, Y. K. Kato, Appl. Phys. Lett. 110, 191101 (2017).
[2] A. Ishii, M. Yoshida, Y. K. Kato, Phys. Rev. B 91, 125427 (2015).
Corresponding Author: Yuichiro. K. Kato
Tel: +81-48-462-1111, Web: http://katogroup.riken.jp/, E-mail: yuichiro.kato@riken.jp– 90 –

2P-21
Effect of electrode configuration on formation and elongation ofcarbon nanotube filaments by gas discharge breakdown○Masatoshi Hiromura, Soichiro Magata, Hideki Sato
Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

We previously reported that gas discharge breakdown generated between planar electrodes,
on which cathode electrode was coated with carbon nanotube (CNT) film, formed bridging offilament-like CNTs between them [1]. We consider that this phenomenon may be used as amethod for spinning of CNTs. However, improvement of the CNT filament generation
efficiency and development of an appropriate handling method of the CNT filaments are needed
to fabricate the spinning CNT yarn using this method. We recently found that the CNT filaments
were efficiently collected on an auxiliary electrode, which was additionally placed above thedischarge electrodes (anode and cathode). In this study, we examined the formation
characteristics of the CNT filaments on the auxiliary electrode.
A mat-shaped CNT sheet was applied on the stainless-steel plate of the cathode electrode bypressing. A tungsten wire (0.15 mm diam.) anode was placed horizontally to the CNT mat. The
distance between the anode and the cathode was 1.0 mm. The auxiliary electrode made oftungsten was vertically positioned above the anode wire [Fig. 1(a)]. The auxiliary electrode was
the same potential as the anode electrode. These electrodes were introduced to a dischargechamber. This chamber was filled with Ar gas at 10 kPa and then, DC voltage (800 V) wasapplied between anode and cathode to ignite the gas discharge breakdown. The formation
behavior of the CNT filaments and those elongation behavior were observed.
The gas discharge was generated by applying DC voltage between anode and cathode[Fig.1(b)]. The discharge breakdown generated dust-like CNT bundles, which were peeled offfrom the CNT mat. These CNT bundles were attracted to the anode and auxiliary electrode.
CNT filaments were formed around the electrodes. After that, the auxiliary electrode was
moved away from the discharge area. This gave rises to elongation of the CNT filaments on theauxiliary electrode [Fig.1(c)]. This behavior indicates that the CNT bundles detached from themat were attracted to the auxiliary(b)(c)
electrode by electrostatic force and (a)Auxiliary
CNT
became adhered to it. These bundles
electrodefilaments
attracted the other bundles, whichwere connected the end of CNT Anode wire
Elongated
CNT filaments
bundles adhered to the electrode.
The repetition of this processelongated the CNT filaments.
Further elongation of the filaments
Gas discharge
CNT matmay be possible by optimizing the on cathodebreakdown
formation conditions (e.g., applying Fig. 1 (a) and (b) are photographs of electrodes before and (b)bias voltage to the auxiliary after ignition of gas discharge breakdown followed by formationof CNT filaments. (c) shows CNT filaments elongated byelectrode).
moving the auxiliary electrode upward. Scale bars are 1.0 mm.
This study was supported by JSPS
KAKENHI Grant No. 19K05206.
[1] H. Sato et al., Appl. Phys. Lett., 110, 033101 (2017).
Corresponding Author: H. Sato

Tel: +81-59-231-9404, Fax: +81-59-231-9404, E-mail: sato@elec.mie-u.ac.jp– 91 –

2P-22
Encapsulation of C60Fx in SWCNTs and its properties○Tsuyoshi Hasegawa, Shunsuke Kondo, Shun Manabe, Kohei Kondo,
Yosuke Ishii and Shinji Kawasaki
Department of Life Science and Applied Chemistry, Nagoya Institute of Technology,
Nagoya 466-8555, Japan

Single-walled carbon nanotubes (SWCNTs) can encapsulate several kinds of molecules. So
far, we have inserted fullerenes (e.g. C60, C70), organic molecules (e.g. anthraquinone,) andelemental molecules (e.g. iodine, sulfur, phosphorus) into SWCNTs, and investigated theproperties. One of the most classic and commonly known encapsulation-induced molecules, isthe peapod, that is synthesized by inserting fullerene molecules inside SWCNTs. Thesefullerene molecules enjoy high reactivity that enables the synthesis of more advanced
derivatives. One of the fullerene derivatives, fluorinated fullerene (C60Fx), is a molecule inwhich fluorine atoms are bonded to a C60 (Fig.1 (a)). The crystal structure and physicalproperties of C60Fx are different from those of C60. Since C60Fx works as an electron acceptor
molecule, the electronic state of SWCNTs is expected to change by encapsulation of C60Fx into
SWCNTs. However, such encapsulation of C60Fx into SWCNTs is difficult, because themolecule size of C60Fx is too large to the conventionally available SWCNTs having diameter
less than 1.5 nm. Recently, larger diameter SECNTs become available. So, the encapsulation of
C60Fx is now possible (Fig.1 (b)).
We prepared C60Fx encapsulated into SWCNTs using a gas phase method. We placed C60Fx
and SWCNTs in a glass tube, and sealed the glass tube under vacuum. Then, we heated theglass tube to vaporize C60Fx, allowing the C60Fx to be encapsulated into SWCNTs (Fig.1 (c)).
We confirmed using Seebeck coefficient measurement, that the surface of C60Fx@SWCNTs
was positively charged. We also confirmed the improvement of the performance to be an
oxygen reduction reaction catalyst.
Acknowledgement
C60Fx samples were provided by Prof. Hattori (Shinshu Univ.).

Fig.1 (a)XRD profile of C60Fx and C60, it was confirmed that the structure was fcc. (b)Encapsulation of C60Fx
into SWCNTs, (c)Expected model image of C60Fx@SWCNTs 
Corresponding Author: S. Kawasaki, Tel: +81-52-735-5221, E-mail: kawasaki.shinji@nitech.ac.jp– 92 –

2P-23
Carbon nanobrushes-based gas sensor○Mayumi Kosaka and Ryota Yuge
System Platform Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan

Monitoring of gas components is of increasing importance in many application fields for thesafe and comfortable society, such as human health care, medical application, exhaled breath
analysis, indoor air quality, fire detection, industrial safety, and global environmental protection.
Especially, gas measurements for health conditions have come into the spotlight, since a numberof gases have been recently reported to relate physical conditions or diseases. For instance,
nonanal which is one of the volatile organic compounds (VOCs) is considered to be a marker
for lung cancer [1], methyl mercaptan is reported to be produced by periodontitis and to be amarker for colon cancer or liver disease [2], acetone and isoprene are gaining attention as
metabolic gases, and ammonia is supposed to relate hepatitis [3]. The gas sensor detecting thesegases requires high sensitivity owing to the low target concentrations from ppb to ppm level,
fast response time, low cost sensor system, and gas-selectivity.
Carbon nanobrush (CNB) which has fibrous aggregate structure of single-walled carbon
nanohorns is a new member of the nanocarbons [4]. CNBs are expected to be good electrodematerial for the gas sensing devise, due to their unique characteristics including highdispersibility, large specific surface area and high electrical conductivity. However, yield of the
CNBs prepared by CO2 laser ablation is low and major products are spherical single-walledcarbon nanohorn aggregates (CNHs) which are hard to remove from the CNB products.
In this study, we present the fabrication methods of the highly sensitive CNBs gas sensor. A
casting film of the CNB products was prepared with the dispersion of CNBs products containing
a large amount of CNHs. The particulate CNHs fill in the space between the fibrous CNBs in
the film. The CNHs in the surface layer of the film block the gas diffusion path to the inner
CNBs, then only the surface CNBs can contribute to the gas sensitivity, since not the CNHs but
the CNBs with high conductivity respond to the gas adsorption. To expand the scope of the gas
diffusion, we devised an original film fabrication method of the CNBs using a large pore size
filter. Filtering the dispersion of CNBs products by a 5 micron pore size filter separates CNBs
and CNHs partially in the filter. The CNBs get tangled in fibers of the filter surface and theCNHs accumulate in the deep part of the filter because the CNHs size is obviously smaller thanthe pore size of filter. Upon exposure to gaseous molecules, the CNBs with large spaces in thefilter film respond efficiently to the gases and the electrical resistance dramatically increasedfor VOCs and ammonia gases. Furthermore, the CNBs-based gas sensor has demonstrated tohave the highest sensitivity in the comparison with other nanocarbons-based them. Detailresults of the gas sensors will be discussed in the presentation.
[1] P. Fuchs et al. Int. J. Cancer, 126, 2663 (2010).
[2] A. Ishibe et.al. J. Clinical Oncology, 34, 529 (2016)[3] S. Ravi et al. Gastroenterology Report, 5, 232 (2017)[4] R. Yuge et al. Adv. Mater., 28, 7174 (2016)
Corresponding Author: M. Kosaka
Tel: +81-29-850-1138, Fax: +81-29-856-6136
E-mail: m-kosaka@az.jp.nec.com– 93 –

2P-24Fabrication of superhydrophobic and superoleophilic spongeusing graphene oxide and carbon nanotubes○Yuki Morikuni, Masanori Hara, Masamichi Yoshimura
Graduate School of Engineering, Toyota Technological Institute, Nagoya 468-8511, Japan

Oil spillage and industrial wastewater cause water pollution and damage to environment.
The solid surface with superhydrophobic (water contact angle is higher than 150°) and superoleophilic (oil contact angle is lower than 10°) has attracted attention for oil/water separation[1]. In this paper, we fabricate hydrophobic and oleophilic sponge using graphene oxide (GO)combined with carbon nanotubes (CNT) and carboxylic acid functionalized CNT (f-CNT),
and evaluate their hydrophobicity and oil absorption capacity.
GO were prepared from natural graphite by Hummers’ method [2]. The specimens were
fabricated by dipping commercial melamine sponge into the mixture of GO and CNT
dispersion and by drying in vacuum oven. The GO coated on the sponges was reduced byascorbic acid solution at 80 ℃. Then the sponges were dried in vacuum at 100 ℃ for 1 h.
Wettability of the sponges was measured by θ/2 method using a droplet of water or oil (1 μL)
at room temperature. The morphology of the sponges was observed by scanning electron
microscope (SEM) (S4700, HITACHI). GO and rGO were characterized by Raman
spectroscopy and UV-visible spectroscopy.
Table 1. Water contact angle of coated sponges.
coating material

melamine spongerGO

rGO-f-CNTrGO-CNT

contact Angle－

127.3±3.2°132.8±3.5°

135.5±2.1°

Water contact angle of each sponge is listed inTable 1. Melamine sponge easily absorbs water
drop. On the other hand, rGO, rGO-f-CNT andrGO-CNT sponges show hydrophobicity.
Figure 1 shows SEM images of each sponge.
Sheet-like rGO coats the surface of melamine
sponge, as seen in Fig. 1 (b). The surface
roughness of rGO-f-CNT and rGO-CNT
increased as shown in Fig. 1 (c) and (d). We
found that rough character induced by theattachment of CNT is responsible for thehydrophobicity.
Fig. 1 SEM images of (a) pristine, (b) rGO coated,(c) rGO and f-CNT composite coated, (d) rGO and[1] B. Wang, W. Liang, Z. G. Guo and W. Liu, Chem.
CNT composite coated melamine sponge.
Soc. Rev., 44 , 336 (2015)[2] S. Abdolhosseinzadeh, H. Asgharzadeh and H. S. Kim, Sci. Rep. 5, 10160 (2015).
Corresponding Author: Masamichi Yoshimura
Tel: +81-52-809-1851
E-mail: yoshi@toyota-ti.ac.jp– 94 –

2P-25
Zinc Oxide Nanoparticle Decorated on Nitrogen-Doped Graphene Sheet as
Advanced Supercapacitor Electrode○Rohit Yadav, Masanori Hara, Prerna Joshi, Masamichi Yoshimura
Graduate School of Engineering, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku,
Nagoya 468-8511, Japan
Supercapacitor electrodes with large charge storage capacity are potential candidate in
microelectronics and power storage. Transition metal oxides (MnO2, RuO2, etc.) andsulphides, conducting polymers (polyvinyl alcohol, polyaniline, etc.) and carbon-basedmaterials (carbon nanotubes, graphene, etc.) have emerged as a unique class of active
electrode material for supercapacitor applications. The present research work focuses on theinvestigation of a novel electrode material with the synergistic effect of metal oxide (ZnO)
and carbon-based support material (nitrogen-doped reduced graphite oxide (N-rGO)) [1,2].
Low cost, non-toxicity, and environment-friendly nature of ZnO make it suitable for energy
storage application, however, its limitation of low electrical conductivity can be overcome byits composite with N-rGO which will also provide mechanical support against volumetricchange during charge-discharge.
For the synthesis of rGO and N-rGO, graphene oxide (GO) was synthesized using modified
Hummers’ method. Briefly, N-rGO was synthesized via pyrolysis of urea and GO at 800oC
for 1 hr in N2 atmosphere. The ZnO/N-rGO composite was prepared by in-situ hydrothermal
synthesis method using N-rGO, Zn(NO3)26H2O and NaOH as precursors at 150 oC for 12 hrs.
For comparison, ZnO and ZnO/rGO were also prepared using the same synthetic procedures.
N-rGO, ZnO, ZnO/rGO and ZnO/N-rGO were characterized by XRD, FE-SEM, TEM, EDX
and XPS, and Raman spectroscopy. Electrochemical measurement was performed using 3
electrode setup with Pt as a counter electrode, Ag/AgCl as a reference electrode in
1M
Na2SO4 solution.
XRD, XPS, FE-SEM and Raman spectroscopy confirm the characteristics of the synthesized
support materials N-rGO, the formation of ZnO and its composites with rGO (ZnO/rGO) and
N-rGO (ZnO/N-rGO). Fig. 1 shows HR-TEM
micrographs with well crystalline ZnO NPs ofsize 1.6 ± 0.2 nm, homogeneously distributed on
N-rGO sheets. The lattice spacing of 0.275 nm
agrees with (100) plane of wurtzite HCP ZnO
and 0.332 nm is consistent with (002) plane of
N-rGO from XRD diffractogram. The
electrochemical analysis demonstrates the
ZnO/N-rGO composite as an advanced
electrodematerialforsupercapacitor
performance.
Fig. 1. HR-TEM image of ZnO/N-rGOQP
composite.
[1] C. K. Maity et al. Vacuum, 157, 145 (2018).
[2] A. N. P. Madathil et al. Proc. SPIE 6639, Nanophotonic Materials IV, 66390J (2017).
Corresponding Author: Masamichi Yoshimura
Tel: +81-52-809-1851
Web: http://www.toyota-ti.ac.jp/surface
E-mail: yoshi@toyota-ti.ac.jp– 95 –

2P-26
Enhancement of electric field by surface plasmon on hollow cylinder○Yuan Tian, Fenda Rizky Pratama, Muhammad Shoufie Ukhtary, Riichiro Saitoω[1016 Hz]㻌Department of Physics, Graduate School of Science, Tohoku University,
Sendai 980-8578, Japan
A metal cladded cylinder with dielectric core (Fig.1) can be a good model of tips
used in tip enhanced Raman spectroscopy (TERS) [1] or probes used in scanning nearfield optical microscopy (SNOP) [2]. In those experiments, a large enhancement ofelectric field near the probe is found when we shed the light to cylinder and it isconsidered to be the result of surface plasmon (SP). Such enhancement is important,since the enhancement of electric field provides better optical imaging of the sample
below the diffraction limit. E. Devaux et.al observed the field enhancement on suchhollow cylinder, they also theoretically predicted the existence of SP on such cylinder,
and the relation of such SP with the enhancement they observed in experiment [3].
However, they did not calculate enhancement explicitly as a function of diameter or
frequency. Such information may help toimprove instrument for experiment.
In this work, we investigate theenhancement of electric field and absorption
GLHOHFWULF
of light on metallic hollow cylinder. First we
solve the electromagnetic field by the
PHWDO
Helmholtz equation. We then calculate the)LJ7KHOD\RXWRIDKROORZF\OLQGHU
energy dispersion relations of SP from theboundary conditions (Fig.2). In order tocalculate the enhancement of several
63GLVSHUVLRQ
geometries, we include an incident light on
the system. The absorption is also
calculated since the peak of absorption
63GLVSHUVLRQ 
corresponds the wave vector where SP
modes were resonantly excited.
We find that the enhancement ofelectric field by SP excitation occurs only
when dispersion of light intersects with thatof SP, which corresponds to peak of opticalabsorption. We explain the optimum
𝑘𝑘𝑧𝑧 [107 m−1 ]㻌
condition for the enhancement as a function of
the thickness of cylinder wall. 
Fig.2 Energy dispersions of light and the

two solutions of surface plasmon

Reference:[1] Alexander S. McLeod et.al., Phys. Rev. B 90, 085136 (2014).
[2] P. Wróbel et.al., Journal of Applied Physics 112, 074304 (2012).
[3] U. Schröter, E. Devaux et.al., Phys. Rev. B 64, 125420 (2001).

– 96 –

㻌

2P-27
Synthesis of vertically aligned CNTs and evaluation of yarn spinnability○Shinji Igimi1, Morihiro Okada1,2, Taiki Inoue1, Shigeo Maruyama1,3, Shohei Chiashi1
12Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Chemistry and Biochemistry, University of Maryland, Maryland 20742, United States
3
Energy Nano Engineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8564, Japan

Carbon nanotube (CNT) yarns are highly expected toward macro-scale applications due tosuperior electrical and mechanical properties of CNTs. Researchers have studied how to make
CNT yarns [1] and why CNT yarns can be spun by dry spinning from vertically aligned (VA)
CNTs [2]. However, only VA-CNTs which are synthesized using iron catalyst under specificconditions can be spun, and the determining factors of spinnability have not been fully
elucidated. In this study, we evaluated spinnability of VA-CNTs and its relationship with theweight of water molecules adsorbed on them. We synthesized VA-CNTs using cobalt catalyst
and spun CNT yarns from them. We changed various synthesis conditions and grew VA-CNTs
which can be spun into CNT yarns of up to about 1 cm (Fig. 1(a)). In addition, using
thermogravimetric analysis (TGA), we evaluated the weight of CNTs and water adsorbed on
CNTs (Fig. 1(b)), which provides the number of adsorbed water molecules per unit area of
CNTs. We employed three types of samples: VA-CNTs which we synthesized with cobalt
catalyst and two spinnable VA-CNTs provided from other groups [3,4]. The two spinnablesamples adsorb water of 60 molecules/nm2 and 14.5 molecules/nm2, respectively. On the other
hand, our samples adsorb water molecules of 3.0 molecules/nm2. This result suggested thatspinnable VA-CNTs adsorb more water than the VA-CNT synthesized using cobalt catalyst
does

;ďͿ
Weight (mg);ĂͿ2ŵŽƌƉŚŽƵƐ

tĂƚĞƌ

1

0
0

Ed

200
400
600
Temperature (°C)

Fig. 1 (a) SEM image of a CNT yarn spun from VA-CNTs synthesized using cobalt catalyst. (b) TGA profile of
CNTs, indicating the weight of CNTs, amorphous carbon, and adsorbed water.
[1] K. Jiang et al. Nature, 419, 801 (2002).
[2] C. Zhu et al. Carbon, 49, 4996 (2011).
[3] S. Kim et al. Science, 357, 773 (2017).
[4] Y. Inoue et al. Appl Phys Lett, 92, 90 (2008)
Corresponding Author: S. Chiashi
Tel: +81-3-5841-6407, Fax: +81-3-5841-6408, E-mail: chiashi@photon.t.u-tokyo.ac.jp– 97 –

2P-28Laser-energy dependent helicity-changing Raman spectra of MoS2
○Tong Wang1, Nguyen T. Hung2, Ahmad R.T. Nugraha1, Riichiro Saito1
1Department of Physics, Tohoku University, Sendai 980-8578, Japan

2Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai

980-8578, Japan
Recently, transition-metal dichalcogenides (TMDs) has attracted for many applications dueto their unique properties. In particular, TMDs has been expected as good materials forvalleytronics. For TMDs, valley-selective optical transition occurs by using circularly
polarized light. In order to know the information of optical selection rule of TMDs withcircular polarized light, we calculate the first-order Raman spectra of MoS2 by using density
functional theory (DFT) calculation [1].
In this study, we adapt circularly polarized lightas the incident and scattered light to study
helicity changing phenomenon in Raman spectra.
Here, by using DFT with both electron-photon
and electron-phonon interactions, we made ourown program [3] to calculate the first-orderhelicity-changing Raman spectra. In Fig.1, we

A1
E’

488nm
show
the
calculated
results
of
the
514nm
helicity-dependent Raman spectra as a function
532nm
633nm
of laser energy. We found that E’ mode shows
the helicity-changing Raman spectra while theA1 mode shows the helicity-conserved Raman
spectra. However, Miller et al. [2] showed that E’Fig.1 Helicity-changing Raman spectra ofmode shows the helicity-conserved Raman spectra
several energies of laser.
at laser energy of 1.95 eV, while it shows
helicity-changing Raman spectra for other values of laser energy. We will discuss the originof the phenomena based on the results by Miller’s work.

[1] Y. Tatsumi, R. Saito, Phys. Rev. B 94, 235408 (2016).
[2] B. Miller et al, Nature Communications 10, 807 (2019)[3] Y. Tatsumi, R. Saito, Phys. Rev. B 97, 115407 (2018).
Corresponding Author: Tong Wang
E-mail: wang@flex.phys.tohoku.ac.jp– 98 –

2P-29Edge plasmon in rectanglular antenna of grpahene○ Masato Maruoka1, Taisei Maeda2, M. Shoufie Ukhtary1, and Riichiro Saito1
1
Department of Physics, Tohoku University, Sendai 980-8578, Japan
2
National Institute of Technology, Sendai College 989-3128, Japan
When circularly polarized light comes into the chiral shape material such as S-shaped
antenna, the absorption depends on the helicity of the incident light which is called circulardichroism [1]. We calculate the optical response of S-shaped antenna for circularly polarized
light by finite-difference time-domain method (so called MEEP [2]) and we notice localized
charge propagates along the edge. This behavior is similar to that of the plasmon in 2D
material with edge [3]. In general, the electric field of the 2D plasmon is rotating out-of-plane
if the 2D plasmon exist far from the edge. However, if the plasmon is near the edge, thecharge is localized at the edge and electric field rotates in-plane. In other words, the current isrotating around the edge and thus we can discuss the phenomena by a response of rectangulardisk with edge plasmon.
In this work, we investigate the relationship between circular dichroism and the edge
plasmon. We calculate the edge plasmon in graphene nanoribbon by solving the Helmhotlz
equation and by using MEEP. Both analytical and numerical solution show rotating current
which is localized at the edges. Then we extend the analytical expression of the plasmon
modes for the rectangular disk (4 edges). In order to discuss the optical absorption andemissions by exciting the plasmon, we include the incident light to the solution of theplasmon by the boundary condition of the Helmholtz equation. We will also discuss thecircular dichroism of excited plasmon.
Corresponding Author: Masato Maruoka
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: maru@flex.phys.tohoku.ac.jp[1] T. Narushima et al., J. Phys. Chem. C 2013, 117 (45).
[2] Oskooi, A. F. et al. Comp. Phys. Comm. 181, 687–702 (2010).
[3] A. L. Fetter. PRB 33, 3717 (1986).

– 99 –

3P-1
Trion-based High-speed Electroluminescence Emitterswith Carbon Nanotube Films○Hidenori Takahashi 1, Yuji Suzuki 1, Norito Yoshida1, Kenta Nakagawa2 and Hideyuki Maki 1,3
1

Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan
2
Kanagawa Institute of Industrial Science and Technology (KISTEC), Ebina 243-0435, Japan
3
Center for Spintronics Research Network (CSRN), Keio University, Yokohama 223-8522, Japan

Nanocarbon materials, such as carbon nanotubes(CNTs), are promising candidates for optoelectronic lightsources, because they can be easily and directly formed on
silicon substrate. 1-4 Here, as shown in Fig. 1, we fabricatedseveral-GHz modulatable Electroluminescence (EL)emitters with high emission intensity and high fabrication
yield by using semiconducting single-walled carbon
nanotubes (SWNTs) films. The mechanisms of the EL
emission from this emitter are elucidated by the emission
spectrum as shown in Fig. 2 and p-type-like electric

Fig. 1 A schematic illustrationof a SWNTs film EL emitter.

properties. The peaks of the EL emission, whichcorrespond to each of the chiralities of the SWNTs, areabout 0.15 eV red-shifted from the those of the absorption
and PL emission. Such a red shift can be explained by theEL emission from the trion states. As shown in Fig. 4,
rapid emission response was also observed. From thefitting by convolving the ideal EL response curve andsimple relaxation curve given by exp(-t/), 140-ps
relaxation time, corresponding to ~ GHz modulation, isobtained.

1.1
Energy (eV)Fig. 2 Absorption spectrum(blue curve), PL spectrum (green
curve), and EL spectrum (redcurve) of the SWNTs thin film.

[1] N. Hibino et al., ACS Nano 5, 1215-1222 (2011).
[2] M. Fujiwara et al, Appl. Phys. Lett. 103, 143122 (2013).
[3] T. Mori et al, Nano Lett. 14, 3277-3283 (2014).
[4] Y. Miyoshi et al, Nat. Commun. 9, 1279 (2018).
5

Corresponding Author: H. Maki
Tel: +81-45-566-1643, Fax: +81-45-566-1587,
Web: http://www.az.appi.keio.ac.jp/maki/
E-mail: maki@az.appi.keio.ac.jp

Fig. 3 Time-resolved emission
intensities under a rectangularbias voltage.

– 100 –

3P-2
Single-chirality separation of single-walled carbon nanotubes
with a thermoresponsive polymer○Eriko Shimura, Toshiki Sugai, Shota Kuwahara
Department of Chemistry, Toho University, Chiba 274-8510, JapanThe separation techniques for obtaining single-chirality of single-walled carbon nanotubes(SWCNTs) is crucial for application to electronic devices with SWCNTs. The difference inthe hydrophobicity or surface charge of SWCNT micelles with surfactant molecules isreported to be a key factor to separate semiconducting and/or metallic SWCNTs with highpurity. We have succeeded in separating semiconducting SWCNTs withpoly(N-isopropylacrylamide) (PNIPAM), a well-known thermoresponsive polymer withreversible phase transition in aqueous solutions at the lower critical solution temperature(LCST) [1]. The difference in the hydrophobicity of
SWCNTs is understood to be the origin of the selectivity
in capturing SWCNTs with specific electronic structuresinside globules, which are formed by PNIPAM aggregates
above LCST, resulting in releasing semiconducting
SWCNTs into the liquid phase after phase transition of
PNIPAM. In this work, we investigated the dependence on
PNIPAM concentration and additives for achieving
single-chirality separation of SWCNTs, and found that theadditives sensitively selected the chirality of the released
SWCNTs into the liquid phase.
A dispersion of SWCNTs in aqueous sodium cholate Fig. 1 Optical absorption spectra of(SC) solution was prepared by using a probe tip
the obtained liquid phase in theultrasonicator (TOMY, UR-20R), and added to PNIPAM
presence of NaClO with different
solution with additive. Then, the mixed solution wasconcentrations of PNIPAM in
heated to 45 °C above the LCST of PNIPAM andsolution.
incubated for 15 minutes. The obtained liquid phase wascollected,
andcharacterizedbyUV-vis-NIR
spectrophotometer (SHIMADZU, UV-3600).
As shown in Fig. 1, (6,5) SWCNT enriched sample wasobtained in the existence of sodium hypochlorite (NaClO),
additive for oxidant, and the purity of (6,5) SWCNTs
depended on the concentration of PNIPAM. Whentetraborate pH standard solution was used for the additive
alternative to NaClO, (6,4) SWCNTs were selectively
released to the liquid phase (Fig. 2). The separation
mechanism seems to be explained by the dependence ofchirality on the amount of SC and its orientation on thesurface of a SWCNT, same as the commonly accepted
explanation in the density gradient ultracentrifugation Fig. 2 Optical absorption spectra of
the obtained liquid phase withseparation technique [2].

[1] E. Shimura, et al., Chem. Commun., 54, 3026 (2018).
[2]M. S. Arnold, et al., Nat. Nanotech., 1, 60-65 (2006).
Corresponding Author: S. Kuwahara
Tel: +81-47-472-4442 E-mail: syouta.kuwahara@sci.toho-u.ac.jp– 101 –

different additives in solution.

3P-3
Optical Studies of Monolayer MoSe2 on Strongly
Correlated Manganese Oxide○ Yan Zhang1, Yutaka Moritomo2, Keisuke Shinokita1, Yuhei Miyauchi1
and Kazunari Matsuda1
1Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
2Department of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
Monolayer two-dimensional semiconducting transition metal dichlcogenides with coupled
spin-valley degree of freedom have been attractive much attentions from the viewpoint offundamental physics and application of valleytronics [1]. Recently, the artificial
heterostructures based on monolayer transition metal dichlcogenides and various layeredmaterials have been extensively studied. Among these layered materials, the strongly correlated
manganese oxides exhibit unique carrier transport and magnetic properties [2]. Hence, it isinteresting to explore excitonic and valley physics in the artificial heterostructure using
manganese oxides.
In this study, we described novel optical properties of artificial heterostructure of monolayer
MoSe2 and (La0.8Nd0.2)1.2Sr1.8Mn2O7 (Mn oxide). The manganese oxide shows paramagneticinsulator to ferromagnetic-metal transition at 80 K [2]. The temperature dependence ofphotoluminescence (PL) spectra of heterostructure (MoSe2/Mn oxide) and MoSe2 were
measured. Figure 1(a) shows the two PL peaks due to the recombination of exciton (X) andtrion (X-) at 10 K. The temperature dependence of PL intensity (a) 700
MoSe /Mn Oxide
MoSe
600
ratio of X- and X (IX-/IX) in the heterostructure and monolayer
500
MoSe2 in Figure 1(b). We observed that significant difference of
400
Xwhich suggests that doped carrier density of MoSe2 is muchdifferent between the heterstruture and reference. We discussed
the excited state dynamics within the framework of an exciton anda trion in the heterostructure to analyze this difference [3].
Moreover, we will discuss the magneto-optical properties in theheterostructure under strong magnetic fields.

2

300

X-

200
100
0
1.60 1.62 1.64 1.66 1.68 1.70(b) 3.5
3.0
2.5
IX-/IX

PL intensity ratio of X- and X in the heterostructure and MoSe2,

PL Intensity (a.u.)2

Energy (eV)MoSe2/Mn Oxide
MoSe2

2.0
1.5
1.0
0.5

[1] J. Ross, S. Wu, H. Yu. et al. Nat. Commun. 4, 1473–1476 (2013).
[2] Y. Moritomo, Y. Maruyama, T. Akimoto. et al. Phys. Rev. B, 56, R7057(1997).
[3] S. Mouri, Y. Miyauchi, K. Matsuda. Nano Lett. 13, 5944–5948 (2013).
Corresponding Author: K. Matsuda
Tel: +81-774-38-3460, Fax: +81-774-38-3460,
Web: http://www.iae.kyoto-u.ac.jp/conv/
E-mail: matsuda@iae.kyoto-u.ac.jp– 102 –

0.0

10 20 30 40 50 60 70 80 90
Temperature (K)Fig.1 (a) PL spectra of
MoSe2/Mn oxide and MoSe2
at 10 K. (b) PL intensity ratioof trion and exciton from 10
to 85 K.

3P-4
Nearly Isotropic and Large Critical Field from Three-Dimensional
Networks of Anisotropic Superconducting Flakes○Chisato Ando1, Yusuke Nakanishi1, Jiang Pu2, Togo Takahashi2, Taishi Takenobu2, andYasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan

Two-dimensional (2D) superconductors have been recognized as ideal models for
exploring superconductive phenomena at the 2D limit [1], as well as potential candidates forhigh-temperature superconductors [2]. Despite the growing interest in increasing Tc, lesseffort has been made to improve their anisotropy of upper critical field (Hc2). Most of layered
2D superconductors are not isotropically stable against magnetic fields due to theiranisotropic structures. Definitely, their intrinsic anisotropy of Hc2 is a crucial issue to beresolved for their future applications.
Here we demonstrate nearly isotropic and large Hc2 in 3D networks of layered NbSe2 withrandomly aligned flakes. To fabricate the 3D structures, we have developed a selenization
process to convert Nb layers into polycrystalline NbSe2 films [3]. We find that NbSe2 flakes
are preferred to grow randomly with increasing thickness of initial Nb layers (Figure 1a, b),thereby resulting in the realization of nearly isotropic Hc2 (Figure 1c). In addition, the Hc2 forthe present film is larger compared to the bulk layers (Figure 1d). The concept of building up
with 2D superconductors would broaden the range of their applications.

Fig. 1 (a) A schematic illustration of the NbSe2 films converted from Nb layers via the selenization process. (b) A
scanning electron micrograph image of the NbSe2 film. (c) The superconducting transition of the prepared film
under out-of-plane magnetic fields. (d) Temperature dependence of the Hc2 for the present film and the bulk
layers under out-of-plane and in-plane magnetic fields. The values of Hc2 for the bulk are referred to ref [4].
[1] S. Qin et al., Science 324, 1314 (2009).
[2] S. Tan et al., Nat. Mater. 12, 632 (2013); J.-F. Ge, et al., Nat. Mater. 14, 285 (2014)[3] H. Lin et al., Nat. Mater. 18, 602 (2019).
[4] X. Xi et al., Nat. Phys. 12, 139 (2015).
Corresponding Author: Y. Nakanishi, Y. Miyata
Tel: 042-677-2508, E-mail: naka24ysk@tmu.ac.jp, ymiyata@tmu.ac.jp– 103 –

3P-5
Work function modulation of transparent electrode for fabrication of
WS2-based highly transparent solar cell
○X. He1, Y. Yamaguchi1, T. Kaneko1, and T. Kato1,2

1Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2 JST-PRESTO

Layered transition metal dichalcogenide (TMD) is known as a true 2D material withexcellent semiconducting properties. TMD is one of the most attractive materials for futuretransparent and flexible optoelectrical devices due to their atomically thin structure, band gap
in visible light range, and high optical transparency. Although the solar cell of TMD has been
widely investigated by many groups, those are based on the pn junction type solar cell. Sincecomplicated structures are required to form pn junction structures in TMD such as dual gateelectrodes or position selective doping, the device size of pn junction solar cell with TMD islimited within very small region (few μm). In spite of the outstanding advantages of TMD,
those merits of TMD have not been applied for transparent and flexible solar cell, which is
attracted intense attention as a next-generation energy harvesting technology.
Recently, we have developed a new fabrication process of TMD-based solar cell [1]. In our
process, Schottky type device configuration is utilized, which can be simply formed byasymmetrically contacting electrodes and TMD. The power conversion efficiency clearly
depended on the work function difference between two electrodes (ΔWF), and a higher
efficiency could be obtained with higher ΔWF (Pd-Ni). Based on the optimizations ofelectrodes and distance, the power conversion efficiency can be reached up to 0.7 %, which is
the highest value for solar cell with similar TMD thickness [1].
In our previous study, we used conventional metals such as Ni and Pd to tune the Schottky
barrier height between electrode and TMD, which suppress the transparency of whole device.
Furthermore, the device size was limited within μm scale because of the size of exfoliatedTMD.
To improve the transparency of whole device,
we use indium tin oxide (ITO) as electrodes. The
directly grown large area WS2 films are also used
to overcome the limited device size. The work
function of transparent electrodes are controlled
by inserting various thin metals between WS2 andITO (Fig. 1). After controlling the ΔWF of ITO
electrodes and optimizing the synthesis methodof WS2, clear power generation can be observedwith ITO/WS2 based transparent solar cell inlarge scale (Fig. 1). Transparency of whole device Fig. 1. Work function of different thin metal
reaches up to 80%, which is very important for modified electrodes. Insertion is typical opticalrealizing the industrial application of TMD as a image of transparent solar cell fabricated withdirectly grown WS2 crystal.
transparent and flexible solar cell.
[1] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato, Sci. Reports 7, 11967 (2017).
Corresponding Author: Xing He
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: he.xing.q7@dc.tohoku.ac.jp– 104 –

3P-6
Fabrication and evaluation of hBN-encapsulated Monolayer MoSe2 with
CNT local gates○Takato Hotta 1, Haruna Nakajima 1, Taiki Inoue 2, Shohei Chiashi 2, Keiji Ueno 3, Kenji
Watanabe 4, Takashi Taniguchi 4, Shigeo Maruyama 2, 5 and Ryo Kitaura 1
1

Department of Chemistry, & Institute for Advanced Research, Nagoya University, Nagoya
464-8602, Japan2
Departure of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan3
Department of Chemistry, Saitama University, Saitama 338-8570, Japan
4
National Institute of Materials Science, Tsukuba 305-0044, Japan
5
Energy Nano Engineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8564, Japan

Confined excitons in two-dimensional (2D) semiconductors, such as transition metal
dichalcogenides (TMDs), have provided fascinating opportunities for investigation of
excitons at the 2D-limit. Recently, zero-dimensional (0D) confined excitons have been foundin a WSe2/MoSe2 moiré superstructure, giving a playground to explore confined excitons at
the 0D [1, 2]. In this work, we have focused on adding one more kind of confined excitons,
excitons confined into one-dimensional space. For this purpose, we have fabricatedhBN-encapsulated MoSe2 devices with carbon nanotube (CNT) local gates.
We have fabricated two types of hBN-encapsulated monolayer MoSe2 with CNT local
gates by dry transfer method based on PC/PDMS stamps: hBN/MoSe2/hBN with CNT top
gates and CNT back gates. First, CNTs weregrown on quartz substrates with chemical vapor
deposition (CVD) method, and then, theCVD-grown CNTs were transferred to SiO2/Si
substrates with the wet transfer method. For
fabrication of hBN/MoSe2/hBN with CNT top
gates, the CNTs transferred on SiO2/Si were
picked up with PC/PDMS stamps andtransferred onto a hBN-encapsulated MoSe2.
Fig. 1 shows an optical microscope image of afabricated hBN-encapsulated MoSe2 with CNT
top gates. Photoluminescence (PL) spectroscopy
and imaging at cryogenic temperature has
shown that PL intensity and PL spectra change
according to gate voltage applied through CNT
back gates. In the presentation, we will discuss
the details of the sample preparation and PL Fig. 1 An optical microscope image of thefabricated hBN/G/MoSe2/hBN with CNT top
measurement.
gates. Positions of CNTs are indicated by solidlines.

[1] K. L. Seyler, et. al., Nature 567, 66-70 (2019).
[2] K. Tran, et. al., Nature 567, 71-75 (2019).
Corresponding Author: R. Kitaura
Tel: +81-52-789-3660, Fax: +81-52-747-6442,
E-mail: r.kitaura@nagoya-u.jp– 105 –

3P-7
Detection of odor molecule with graphene biosensor
Chishu Honma1), Hironaga Noguchi1), Yoshiaki Sugizaki2),
Atsunobu Isobayashi2), Yuhei Hayamizu1)
1) School of Materials and Chemical Technology Department of Materials Science andEngineering, Tokyo Institute of Technology, 2-12-1 Ookayama, meguroku, Tokyo, Japan
2) Corporate Research & Development Center, Toshiba Corporation,
1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
E-mail: honma.c.aa@m.titech.ac.jp
Graphene biosensor attracts wide attentions due to its unique properties [1]. The applications
are not limited only in the medical field, but also in the environmental field. The
functionalization of the surface of graphene is a key to be act as a sensor. However,immobilization of bio-probe molecules using covalent bonds can cause a degradation of the
intrinsic electronic properties. Furthermore, it is crucial to control the orientation of probe
molecules for sustaining its activity. In this work, we address these problems by using selfassembled peptides that self-assemble on the graphene surface, resulting in non-covalentimmobilization of bio-probes [2]. These peptides can form uniform and ordered structures ongraphene spontaneously. Using the self-assembled peptides, we aim to create an odor biosensor
that detects limonene (citrus odor molecule) as a model molecule. We designed two kinds of
peptides: (1) molecular scaffold and (2) bio-probe. By co-assembling these peptides, we formed
a uniform thin film of peptides on the surface of graphene, and succeeded to biofunctionalized
it with a good sensitivity to limonene. Figure 1 shows images of atomic force microscope ofthe self-assembled membrane of peptides with various mixing ratio of the two kinds of peptides.
In the presentation, we will introduce electrical characteristics of the biosensor. This work was
supported by the Cabinet Office (CAO), Cross-ministerial Strategic Innovation Promotion
Program (SIP), “An intelligent
knowledge processing infrastructure,
integrating physical and virtual
domains” (funding agency: NEDO).
Reference[１] Ohno,Yasuhide ,et al.; J. Am. Chem.
Soc., 2010, 132 (51), 18012–18013[２] Khatayevich, Dmitriy, et al. Langmuir
28.23 (2012): 8589-8593.

Figure 1. Images of assembled peptide on graphene surface
observed by atomic force microscope, and their heightprofiles.

– 106 –

3P-8
Efficient Production and Characterization of 1D Transition Metal
Monochalcogenides Inside Carbon Nanotubes○Naoyuki Kanda1, Yusuke Nakanishi2, Dan Liu3, Zheng Liu4, Kazu Suenaga4, David
Tomanek3, and Hisanori Shinohara1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Department of physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan3
Department of physics and Astronomy, Michigan State University, East Lansing, MI 48824-6455,
USA
4
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan2

The idea that single units of van der Waals (vdW)-bonded materials might show exotic
properties distinct from their bulk counterparts has been verified by the successful isolation of
2D vdW-layered materials such as graphene and transition metal dichalcogenides (TMDs).
Similarly, isolated 1D vdW-wired materials like transition-metal monochalcogenides (TMMs)
could exhibit superlative properties being significantly absent in their bundles [1, 2]. Recently,
our group has successfully isolated MoTe nanowires (NWs) inside carbon nanotubes (CNTs),
and observed their unusual torsional dynamics [3]. On the encapsulation of TMM-NWs,
transport characteristics of CNTs are also expected to vary drastically due to their interaction.
However, the current method for the synthesis of MoTeNWs from MoTe2 produces the NWs
in low yield, which makes it difficult to perform detailed studies of their properties.
Here we report high-yield synthesis of MoTeNWs inside CNTs from molybdenumoxides and "naked" terullium. We found that MoTeNWs can be efficiently self-assembled
from these precursors (Fig. 1a, b). Furthermore, this method was applied to a new member of
TMM-NWs, WTeNWs. The efficient synthesis method allows for the studies of twist-induced
properties of TMM-NWs as well as transport characteristics of the hybrid CNT materials.
Detailed discussion will be presented in the conference.

ab

Fig. 1a, b. HAADF-STEM image of MoTeNWs[1] H. Zhu, Q et al., Adv. Mater. 29, 1606264 (2017).
[2] I. Popov, S et al., Nano Lett. 8, 12 (2008).
[3] M. Nagata et al., Nano Lett., in press.
Corresponding Author: Y. Nakanishi
Tel: +81-42-677-1111
Web: http://naka24ysk.jp/wp/
E-mail: naka24ysk@tmu.ac.jp– 107 –

Fig. 2. Raman spectrum of MoTeNWs@CNTs

3P-9
Supramolecule of Li+@C60 and fluorinated tetraphenylporphyrin○ Kazuhira Miwa1, Shinobu Aoyagi1 Hiroshi Ueno2,3, Hiroshi Okada4,5,6,
Kazuhiko Kawachi4 Yasuhiko Kasama4
1

Dept. of Information and Basic Science, Nagoya City Univ., Nagoya, 467-8501, Japan
Frontier Research Institute for Interdisciplinary Sciences, Creative Interdisciplinary Research
Division, Tohoku Univ., Sendai, 980-8578, Japan
3
Dept. of Chemistry, Graduate School of Science, Tohoku Univ., Sendai, 980-8578, Japan
4
Idea International Co., Ltd. Sendai, 981-0922, Japan
5
Fukamatsugumi Co., Ltd. Sendai, 981-0931, Japan
6
Center for Fundamental and Applied Research of Novel Nanocarbon Derivatives, Center for Key
Interdisciplinary Research, Tohoku Univ., Sendai, 980-8578, Japan
2

Lithium ion endohedral fullerene (Li+@C60) has a unique structure encapsulating Li+ insidethe π−conjugated spherical C60 cage. The cationic Li+@C60 crystallizes with weakly
coordinated anions such as SbCl6− [1], PF6− [2], and bis(trifluoromethanesulfonyl)imide anion(TFSI−) [3]. Li+@C60 also forms a guest–host type supramolecule with [10]cycloparaphenylene([10]CPP) [4] and π−π stacked supramolecules with porphyrins. A supramolecule of Li+@C60
and 5,10,15,20-tetrakis(4–sulfonatophenyl)porphyrin zinc (ZnTPPS), [Li+@C60 – ZnTPPS4–]
shows a long−lived electron charge separation state by photoinduced electron transfer [5]. The
optical property and intermolecular interaction can be applied to photovoltaic cells [6] andtuned
bychemicalmodificationofporphyrins.
Fluorinatedporphyrin,
tetrakis(pentafluorophenyl)porphyrin (TPFPP) shows additional intermolecular interaction
with C60 via C–F···C (fullerene) contacts [7][8]. It is interesting to investigate intermolecularinteractions between cationic Li+@C60 and fluorinated porphyrin.
In order to reveal properties and intermolecular interactions of supramolecule of Li+@C60
and fluorinated tetraphenylporphyrin, we investigate crystal structure of co–crystals of Li+@C60(TFSI−) and fluorinated porphyrins. 5,10,15,20-tetrakis(2,3,5,6-tetrafluorophenyl)porphyrin(TTFPP) was prepared according to the Lindsey method. Li+@C60 (TFSI−)/TTFPP co–crystals
were grown from solution of Li+@C60 (TFSI−) and TTFPP by diffusion method. The co–crystal
structure was determined by X-ray diffraction measurement at SPring-8. Although the crystal
system is different, coordinated structure around Li+@C60 in the Li+@C60 (TFSI−)/TTFPP co–crystal is similar to that around C60 in the C60/TPFPP co–crystal. C–F···C (fullerene) distancesin Li+@C60 (TFSI−)/TTFPP are 2.953 – 3.489 Å which are comparable with that in C60/TPFPP.
References[1] S. Aoyagi et al. Nature Chem. 2, 678–683 (2010).
[2] S. Aoyagi et al. Angew. Chem. Int. Ed. 51, 3377–3381 (2012).
[3] S. Aoyagi et al. R Soc Open Sci. 5, 180337 (2018).
[4] H. Ueno et al. Angew. Chem. Int. Ed. 54, 3707–3711 (2015).
[5] K. Ohkubo et al. Chem. Commun., 48, 4314–4316 (2012).
[6] K. Ohkubo et al. Chem. Commun. 49, 4474–4476, (2013).
[7] A. Hosseini et al. Crystal Growth & Design. 6, 397–403, (2006).
[8] M. Olmstead et al. Crystal Growth & Design. 6, 109–113, (2006).
Corresponding Author: S. Aoyagi
E-mail: aoyagi@nsc.nagoya-cu.ac.jp– 108 –

3P-10Catalytic activity for reduction of 4-nitroaniline with nickel oxide
nanoparticle-[C60]fullerene nanowhisker composites○Jeong Won Ko1, Sugyeong Jeon2, Weon Bae Ko1,2,3
1

Nanomaterials Research Institute, 2Department of Convergence Science, Graduate School,3
Department of Chemistry, Sahmyook University,,
815 Hwarang-ro, Nowon-gu, Seoul 01795, Republic of Korea

ln (C/C0)

Nickel nitrate hexahydrate (Ni(NO3)2 · 6H2O) and sodium hydroxide(NaOH) weredissolved in to distilled water and then stirring for 30 min. The green precipitate(Ni(OH)2)
was heated to obtain nickel(II) oxide nanoparticle in an electric furnace under Ar gas at 700ºC for 45 min [1]. Nickel(II) oxide nanoparticle-[C60]fullerene nanowhisker composites wereprepared by using nickel(II) oxide nanoparticle solution, C60-saturated toluene, and isopropyl
alcohol by liquid-liquid interfacial precipitation (LLIP) method [2]. The resulting product ofnickel(II) oxide nanoparticle-[C60]fullerene nanowhisker composites was characterized by
X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and transmission
electron microscopy. The catalytic activity of nickel(II) oxide nanoparticle-[C60]fullerene
nanowhisker composites was confirmed in the reduction of 4-nitroaniline by UV-vis
spectroscopy.

0

10

20

30
40
50
60
Time (min)Fig.1 Kinetic study for reduction of 4-nitroaniline with nickel(II)oxide nanoparticle-[C60]fullerene nanowhisker composites[1] K. Karthik et al. J. Alloys. Compd., 509(1), 181 (2011).
[2] K. Miyazawa et al. Surf. Eng. doi.org/10.1080/02670844.2017.1396779 (2017).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318,
E-mail: kowb@syu.ac.kr– 109 –

3P-11
Thermal transport study of molybdenum disulfide nanotubes by molecular
dynamics simulations○Kaoru Hisama1, Takuma Shiga1, Susumu Okada2, Shohei Chiashi1 and Shigeo Maruyama1,3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2

Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan

3

Energy NanoEngineering Lab., National Institute of Advanced Industrial Science and Technology(AIST), Ibaraki 305-8564, Japan

One-dimensional, single-walled structures of transition metal dichalcogenide nanotubes(TMDNTs), have recently been synthesized from templates of carbon nanotube (CNT) [1] andthese TMDNTs were previously predicted to show different electronic and optical properties
from their two-dimensional counterparts [2]. However, little is known about thermal propertiesof TMDNTs, such as diameter, chirality or length dependence of thermal conductivity unlikethat of CNT, which are investigated by many literature [3]. For the future design of electronic
devices with TMDNTs, it is important to understand these thermal transport properties in detail.
Thus, here we investigated the heat conduction of molybdenum disulfide nanotube(MoS2NT) by combining non-equilibrium molecular dynamics (NEMD) and lattice dynamics(LD) [4, 5]. We employed the modified Stillinger-Weber (SW) potential parameters [6] fordescribing the interatomic interactions.
Dispersions of MoS2NT in the range of 3-10 nm were calculated by LD, as is shown in Fig.1(a). NEMD was executed for an end-fixed MoS2NT with length about 10 nm shown in Fig. 1(a).
Although a previous study [7] showed that thermal conductivity of MoS2NT with diameter D> 7 nm did not have significant diameter dependence, our result suggested that there was a
gradual tendency of increase of the thermal conductivity as a function of diameter with the samerange as our LD, as is shown in Fig 1(c).
(a)

FIX HOT−1−1

Thermal conductivity [W m(c)

COLD FIX

K ]

(b)

40

20

0

4

6
8
Diameter [nm]10

Figure 1 (a) Phonon dispersion of MoS2NT (15,15) and (60,60). (b) Schematics of MoS2NT (27,27) andNEMD settings. (c) Thermal conductivity of armchair MoS 2NT as a function of diameter.
[1] R. Xiang et al., arXiv:1807.06154 (2018). [2] Seifert et al., Phys. Rev. Lett., 85, 146 (2000).
[3] P. Wang and S. Maruyama, Advances in Heat Transfer, 50, 43 (2018). [4] LAMMPS: S. Plinpton, J. Comp.
Phys, 117, 1 (1995). [5] GULP: J. Gale, and A. Rohl. Molecular Simulation 29, 291 (2003).
[6] J-W. Jiang et al., J. Appl. Phys., 114, 064307 (2013). [7] H. Meng et al., arXiv:1906.05495 (2019).
E-mail: maruyama@photon.t.u-tokyo.ac.jp
Corresponding Author: Shigeo Maruyama– 110 –

3P-12
Hall Effect on Aligned Metallic Single-Wall Carbon Nanotube Thin Films○Kanako Horiuchi1, Ryotaro Okada1, Hideki Kawai1, Kan Ueji1, Yohei Yomogida1,
Weilu Gao2, Junichiro Kono2, Kazuhiro Yanagi1
12Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Department of Electrical and Computer Engineering, Rice University, Texas 77005, USA

Hall effect measurements are important for understanding the charge transport mechanisms
and intrinsic carrier mobility. However, in hopping conduction systems, it is not possible tocorrectly evaluate carrier density through the hall effect measurements, because hopping
carriers only respond to the electric force, not to the Lorentz force.[1] Transport mechanisms inmost of single-wall carbon nanotube networks are hopping conductions, thus it has been
considered that hall effect cannot be correctly observed in SWCNT systems. However, in themetallic SWCNT networks, weak localization conduction has been observed, and in suchconduction, it may be possible that the hall effect can be observed. Previously, we tried tomeasure the hall effect on metallic SWCNT thin film where the nanotubes were randomly
distributed, but we could not identify correct hall signal. In this study, we investigated the halleffect in aligned metallic SWCNT systems because aligned structure may reduce the localized
hopping conduction.
We prepared thin films of aligned metallic SWCNTs using a method reported by He et al. [2].
The aligned SWCNT thin film was transferred to the SiO2 substrate deposited electrodes, andwe injected carrier by using side gating techniques using
electrolyte gating.
First, we checked the transport characteristics, and we
confirmed ambipolar conduction. Then, we investigatedthe hall voltage at hole and electron conductions. We
observed that the hall voltage becomes negative asincrease of magnetic field at the electron conduction
region, but, the hall voltage becomes positive as theincrease of magnetic field at the hole conduction region(Figure 1). The sign of the hall voltage changed
Figure 1: Hall voltage as a function ofaccording to the types of conduction carriers. These magnetic field at Vg of -3.6 V (holeresults suggest that the hall effect was detected in the conduction) and 3.2 V (electron
conduction).
aligned metallic thin film system.

References: [1] Yi et al., Sci. Rep. 6 23650 (2016) [2] He et al, Nat. Nanotech. 11, 633 (2016)
Corresponding to Kazuhiro Yanagi, yanagi-kazuhiro@tmu.ac.jp– 111 –

3P-13
Transition from Metallic to Semiconducting behaviors in Seebeckcoefficients of Semiconducting Single-Wall Carbon Nanotube film.
○Akari Yoshida, Yota Ichinose, Kengo Fukuhara,
Kan Ueji, Yohei Yomogida and Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192- 0397, Japan

In metallic materials, the decrease of temperature induces the increase of conductivity andthe decrease of Seebeck coefficient. In semiconducting materials, the decrease of temperatureinduces the decrease of conductivity and the increase of Seebeck coefficient. However, in avariable range hopping (VRH) conduction system, we sometimes observe contradictive
behaviors among these temperature dependences of conductivity and Seebeck coefficients, i.e.
decrease of both the conductivity and the Seebeck coefficient as the decrease of temperature.
Usually, single-wall carbon nanotubes (SWCNTs) thin films exhibit VRH conductions. Thus asfar as we know, the absolute value of the Seebeck coefficient decreases as the decrease of
temperature although the conductivity also becomes small, reflecting hopping conduction.
However, recently, theoretical calculation suggests when the Fermi-level is precisely tuned
around the band-edge of the semiconducting van hove singularities, it is possible to change thetemperature dependence of the Seebeck coefficient from the metallic to the semiconducting
behaviors.[1] Therefore, in this study, in order to understand the background of thethermoelectric properties of hopping systems, we investigated whether it is possible to change
the metallic and semiconductor behaviors of the Seebeck coefficient by tuning carrier injections
in semiconducting SWCNTs.
We fabricated an electric double layer transistor (EDLT) devices using an ion gel for thesemiconductor SWCNTs thin film with a diameter of 1.4 nm, which was purified throughdensity gradient ultracentrifugation. By changing the gate
voltage (VG), the carrier injection amount of the sample ischanged to control the location of the Fermi level. And
we have investigated the temperature dependence of theSeebeck coefficient.
Fig. 1 shows temperature dependence of the Seebeckcoefficient in semiconducting SWCNTs thin films in with
controlled Fermi level. When the Fermi level is in theenergy band (VG = -0.8 V, In-Band region), the Seebeckcoefficient decreases as the decrease of the temperature,
which is conventional behavior in VRH hopping systems.
On the other hand, when the Fermi level is located in theenergy gap (VG = -1.0 V, In-Gap region), we observed theFig. 1 Temperature dependence ofincrease of the Seebeck coefficient as the decrease of the Seebeck coefficient in semiconducting
temperature. We observed the transition in temperature SWCNTs thin films.
dependence of the Seebeck coefficient from metallic tosemiconducting types.
[1] Yamamoto&Fukuyama, JPSJ 87, 114710 (2018)

Corresponding Author: K. Yanagi
Tel: +81-42-677-2494, Fax: +81-42-677-2483
E-mail: yanagi-kazuhiro@tmu.ac.jp– 112 –

3P-14
Theoretical Study on Thermoelectric Properties ofLocal Distorted Carbon Nanotube○Keiichiro Matsumoto1, Takahiro Yamamoto1,2
1

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
2
RIST, Tokyo University of Science, Tokyo 125-8585, Japan

Thermoelectric generation is expected to use for the self-sustaining sources, which arerequired to realize IoT society. As a material used for the thermoelectric generation devices, acarbon nanotube (CNT) is a potential candidate for flexible devices. In the CNT film, some of
the CNTs are considered to be locally distorted and/or bent. In fact, the previous experimental
studies confirmed the existence of bent CNTs and showed that the thermoelectric properties
vary when the CNT film is deformed by external forces [1,2,3]. However, the detailed
influence of such mechanical deformation on thermoelectric properties of CNTs has not beenclarified thus far.
In the present study, we have theoretically investigated thermoelectric properties of a
locally distorted semi-conducting CNT using the non-equilibrium Green’s function method
combined with the tight-binding method. We show that the Seebeck coefficient, the electricalconductivity and the power factor of semiconducting CNTs are almost independent with thelocal distortion when it is less than ~30%. On the other hand, when the local distortion islarger than ~30%, the electrical conductivity increases with increasing the local distortion,
whereas the both Seebeck coefficient and the power factor decrease.

Fig. 1 Schematic illustration of CNTs which are locally distorted by contact between CNTs in the CNT film
[1] J. Bernholc et al. Annu. Rev. Mater. Res. 32, 347 (2002).
[2] H. E. Romeo et al. Phys. Rev. B. 65, 205410 (2002).
[3] C. H. Hu et al. Appl. Phys. Lett. 93, 033108 (2008).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1486,
Web: https://www.rs.tus.ac.jp/takahiro/
E-mail: takahiro@rs.tus.ac.jp– 113 –

3P-15Long-term measurement of sheet conductance of CNT ink on papers○Nanami Yamazaki, Yoichiro Hashizume, Takahiro Yamamoto
Department of Electronics, Tokyo University of Science, Katsushika Tokyo 125-8585, Japan

Although poor biodegradable plastics are used as conventional substrates for flexible
devices, a large amount of consumption of plastic contributes to global problems, such as oil
exhaustion and micro plastics problems. These problems correspond to Goal 12 (Responsible
Consumption & Production) and Goal 14 (Life below Water) of SDGs (Sustainable
Development Goals). Therefore, it is required to develop new materials replacing plastic
substrates. One of potential candidates for biodegradable substrates is a paper consisting ofcellulose that is the most abundant carbohydrate on the earth. Electronics using paper substrate
is referred to as “paper electronics” and it is expected to be utilized in a wide range of industries
related to a paper. Ag ink has been mainly used in as the conductive ink thus far. However, Ag
ink shows low resistance only for exclusive papers, but it has extremely high resistance forregular papers.
In this study, we propose water-soluble carbon nanotube (CNT) ink as a versatile ink forvarious types of papers. We measured four-terminal sheet resistance of water-soluble singlewall CNT (SWCNT) ink and multi-wall CNT (MWCNT) ink applied to three types of papers:
a calligraphy paper, a drawing paper and a copy paper. In particular, we focus on the temporalchange, temperature dependence and humidity dependence of sheet resistance. We found the
sheet conductance of both SWCNT and MWCNT inks depends strongly on humidity, not on
temperature. Interestingly, the humidity dependence of sheet conductance of SWCNT ink isinversely correlated with that of MWCNT ink independently of paper types.
Corresponding Author: Takahiro Yamamoto
Tel: +81-3-5876-1492
Web: https://www.rs.tus.ac.jp/takahiro/
E-mail: takahiro@rs.tus.ac.jp– 114 –

3P-16
Effect of nickel/aluminum bilayer film on growth and magnetic propertiesof carbon nanotubes filled with iron nanowire○Masayoshi Oka, Hideki Sato, Yuji Fujiwara

Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

Carbon nanotubes encapsulating iron nanowires (Fe@CNTs) show remarkably highcoercivity to those tube axis directions owing to those magnetic shape anisotropies originatingin high aspect ratio shape of nanowires [1]. Because of these reasons, it is expected that
Fe@CNTs can be used in many application areas such as flexible magnets, magnetic recording
media, electromagnetic interference shielding and so on. However, further improvement of
coercivity in Fe@CNTs is required to realize these applications. We have examined that metal
catalyst films, which was deposited on the substrates used for the Fe@CNT growths bychemical vapor deposition (CVD) influence those growth and magnetic properties. Here we
confirmed that Fe@CNTs grown on Ni thin film shows higher coercivity than those grown on
the other metals such as Fe [2]. Furthermore, we have found that Ni film under which Al
underlayer was formed further enhanced the magnetic properties. In this study, we investigatedgrowth and magnetic properties of Fe@CNTs that were grown on Ni/Al bilayer catalyst film.
Silicon (100) substrate with thermal oxide layer (300 nm) was used for Fe@CNTs growth.
Al underlayer (0.3-2.0 nm) and Ni top catalyst layer (0.3-2.0 nm) were vacuum-deposited
sequentially with the same thickness on the substrates. The substrates were introduced to a CVD
reactor. The reactor was evacuated by a vacuum pump and Ar gas was introduced into thereactor to atmospheric pressure. The rector was then heated to 725℃ and sublimated ferrocene
was introduced into it for 10 min to carry out the Fe@CNT growth.
Fig. 1 shows the cross-sectional SEM image of Fe@CNTs grown by CVD. Fe@CNTs werevertically grown to the substrate. The magnetic characteristics were examined by a vibrating
sample magnetometer. The magnetization curves of Fe@CNTs grown of Ni(0.5 nm)/Al(0.5 nm)
film is shown Fig. 2. The solid and dashed lines show the hysteresis loop of the perpendicularand parallel directions to the substrate, respectively. The coercivity of the perpendicular
direction is higher than that of the parallel direction. Fig. 3 shows the perpendicular coercivitiesof the Fe@CNTs plotted as a function of Ni and Al total film thickness. 1.0 nm of the thickness
gives the maximum coercivity of 2.08 kOe. This indicates that the Ni/Al bilayer film is effective
for the enhancement of coercivities of Fe@CNTs.

Fig. 3 Dependence of coercivity on
Fig. 2 Magnetic hysteresis loops of
Ni/Al film thickness. The thicknesses
Fe@CNTs grown on films of Ni 0.5
show total thicknesses of Ni and Al.
nm/Al 0.5 nm.
This study was supported by JSPS KAKENHI Grant Number 19K05206.
[1] H. Sato et al, Jpn. J. Appl. Phys. 52, 11NL03 (2013).
[2] E. Tamaki, H. Sato, Y. Fujiwara, J. Vac. Sci. Technol. A, 34 02D105 (2016).
Corresponding Author: H. Sato Tel/FAX: +81-59-231-9404, E-mail: sato@elec.mie-u.ac.jp
Fig. 1 Cross sectional SEM image of
Fe@CNTs films grown on substrate.

– 115 –

3P-17
Carbon nanotube growth on discontinuous alumina buffer layer○Taishi Yamashita 1,2 , Hiromichi Watanabe 2, Takaya Akashi 3
1Graduate School of Science and Engineering, Hosei University, Koganei 184-8584, Japan
Research Institute for Material and Chemical Measurement, National Institute of Advanced
Industrial Science and Technology (AIST), AIST Tsukuba Central 3, 1-1-1
3Faculty of Bioscience and Applied Chemistry, Hosei University, Koganei 184-8584, Japan

2

Carbon nanotubes (CNTs) can be applied as an optical / thermal absorption media forblack-body radiation sources and optical baffles, because of their extremely high emissivity.
In the CNT growth process based on a floating catalytic chemical vapor deposition (FCCVD)
method, CNTs are grown on substrates by thermally decomposing a kind of hydrocarbon
species with the assistance of metal fine particles used as the CNT catalyst. If CNTs have tobe grown on metallic substrates, an oxide layer, which can act as the catalyst-support one, has
to be generally formed on the substrates by physical vapor deposition (PVD) methods such as
an electron beam vacuum evaporation. However, the application of PVD is an obstacle toapplying CNTs as a blackbody radiation light sources or light shielding materials, because it is
too expensive and time-consuming to form a thin film on the surface of a three-dimensional
object by PVD methods. In the previous study, we have demonstrated that alumina thin films
deposited on the surfaces of W and Si substrates by alumina sand-blasting (SB) [1] can act asa supporting layer equivalent to alumina thin film by electron beam vacuum deposition in thefollowing growth of multi-walled CNTs on the sand-blasted substrates by FCCVD method [2].
Although a continuous film is formed by PVD methods, a discontinuous film is formed by SB,
which would result in any substrate effects on the CNT growth. In addition, there have been
few works on the CNT growth on metallic substrates in contrast to silicon or ceramics
substrates.
In this work, we compare the structure and characteristics of the alumina buffer layers
formed on various metal substrates by electron beam evaporation and SB, respectively, andevaluate the effects of the buffer layer morphology (continuous / discontinuous film) and aface of the present substrates of W, Ti, Cu, Mo, Al, and a stainless steel was divided into four
sections, one of which was air-blasted with alumina fine particles with a particle size of about
50 μm for 30 seconds to form a discontinuous alumina buffer layer and one of which is kept
as-received. The remaining two sections were covered with continuous alumina films with athickness of 20 nm by electron beam vacuum evaporation using Al and α-A12O3 as
evaporation sources, respectively. Then, CNTs were grown on each substrate at threetemperatures (700, 800, and 900 ℃) by FCCVD using ferrocene and C2H2 as catalyst
precursor and carbon source, respectively. As results, CNTs are fully grown on Ti and Al substrates

irrespective of the growth temperature, though the amount of CNTs grown on the other investigatedsubstrates decreases as the growth temperature increases. This discrepancy indicates that Ti and Al
substrates themselves can promote the growth of CNT especially at high temperatures compared to theother investigated metallic substrates.
[1] H. Watanabe, J. Ishii, and K. Ota: Nanotechnology 27 (2016) 335605.
[2] T. Yamashita, et al., The 56th fullerenes-nanotubes-graphene general symposium, 3P-20 (2018)
Corresponding Author: H. Watanabe
Tel: 042-387-6257, Fax: 042-387-7002,
E-mail: taishi.yamashita.8i@stu.hosei.ac.jp– 116 –

3P-18Synthesis of WSe2 nanotubes by selenization of tungsten oxide nanowires○Yohei Yomogida, Yoshiki Kainuma, Takahiko Endo, Yasumitsu Miyata, andKazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Raman intensity

Transition-metal dichalcogenides (MX2, M = Mo, W; X = S, Se) can form tubular structuresof rolled MX2 sheets, namely MX2 nanotubes. They are semiconducting regardless of how they
are rolled and have advantages in semiconductor applications such as field effect transistors [1],compared to carbon nanotubes, because carbon nanotubes contain metallic nanotubes that cause
bottleneck for the applications. MX2 nanotubes have various combinations of transition metal
and chalcogen, but typically-investigated ones are just WS2 nanotubes. In the case of twodimensional MX2, WSe2 has attracted more attentions than WS2 because of the higher carrier
mobility of WSe2. Thus, WSe2 nanotubes can be more powerful tools to achieve highperformance applications. Here, we develop the method to prepare WSe2 nanotubes by utilizing
the previous synthesis method of WS2 nanotubes [2]. This process takes place by replacing O
atoms of tungsten oxide nanowire precursor by S
atoms and can be applicable to synthesis of WSe2
nanotubes by using Se precursor.
Tungsten oxide nanowire precursor was
synthesized via solvothermal reaction of WCl6 in
ethanol at 180°C for 24 h. The obtained nanowire
precursor was reacted with Se precursor for 1 h in Ar
flow. The selenization was optimized by changing
temperature and concentration of H2 in Ar flow,which is known as a promotor of sulfurization.
Fig. 1 shows typical TEM image of the sample
selenized with H2. We successfully synthesized WSe2
nanotubes with 20 nm in diameter, which structure isFig. 1 TEM image of WSe2
similar to that of the previous WS2 nanotubes [2]. On
nanotubes selenized with H2.
the other hand, the sample selenized without H2 has
no tubular structure. Considering Raman spectra
selenized at 850℃㻌with H
2shown in Fig. 2, the sample selenized with H2 showsWSe2
a clear peak of WSe2, while the sample selenizedwithout H2 shows peaks of only tungsten oxides. This
result indicates that H2 is necessary to form WSe2
nanotubes and the synthetic condition of WSe2
selenized at 850℃㻌w/o H2nanotubes is not the same as that of WS2 nanotubes
WO㼤
that can be synthesized without H2. In the poster, we
WO㼤will discuss carrier transport properties of WSe2
nanotubes compared to those of WS2 nanotubes.
[1] M. Sugahara et al, Appl. Phys. Express 9, 075001 (2016)[2] Y. Yomogida et al, Appl. Phys. Express 12, 085001 (2019)– 117 –

200 300 400 500 600 700 800 900
Raman shift (cm-1)

Fig. 2 Raman spectra of thesamples selenized with H2 andwithout H2.

3P-19Aqueous electrolyte secondary batteries using organic molecules
encapsulated in Single-walled carbon nano tubes (SWCNTs)○○Itta Yamada, Remi Date, Kento Hosoe, Kousuke Tashiro, Yosuke Ishii, Shinji Kawasaki
Department of Chemistry, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Because they have high energy densities, Li ion
batteries (LIBs) have been widely used. However,
LIBs have (1) flammability, (2) high cost, (3) longcharging time problems. Therefore, next
generation batteries conquering these problems
have been highly demanded. We have developed
such a new battery by combining alkali metal
halide aqueous electrolytes and single-walledcarbon nanotube (SWCNT) electrodes. In ourbatteries, anions and cations are simultaneously
adsorbed in anode and cathode electrodes forcharging just like electric double layer capacitors.
Quinone molecules encapsulated in SWCNTs andempty SWCNTs are used as anode and cathodeelectrodes, respectively. We reported that quinone
molecules encapsulated in SWCNTs can work as
Li and Na ion battery electrodes. On the other
hand, we also reported that empty SWCNT
electrode can store iodine molecules in its hollow
core after oxidizing iodide ions. In this work, wefabricated new aqueous electrolyte batteries bycombining these two SWCNT electrodes. Several
kinds of alkali metal halides including LiI, NaI,
LiBr, NaBr, MgI2 and ZnI2 were used aselectrolytes. Two kinds of quinone molecules:
9,10-anthraquinone(AQ)
and9,10phenanthrenequinone (PhQ) molecules wereintroduced into SWCNTs by subliming themolecules and transferring them into SWCNTs
having mean tube diameters of 1.0-5.0 nm in
evacuated glass tubes. We’ll discuss chargedischarge properties of the aqueous electrolyte
batteries.
Corresponding Author: S. Kawasaki
E-mail: Kawasaki.shinji@nitech.ac.jp– 118 –

Fig. 1 Schematic picture of a newly
proposed aqueous secondary battery
using SWCNTs

Fig. 2 Charge and discharge curves
observed for PhQ-I2 battery

3P-20Effect of single-walled carbon nanotubes on electrochemical properties ofplatinum-based electrocatalyst for fuel cells○Kazuki Kishida1, Toru Harigai1, Hirofumi Takikawa1, Takeshi Hashimoto2
1

Department of Electrical and Electronic Information Engineering, Toyohashi University ofTechnology, Toyohashi 441-8580, Japan
2
Meijo Nano Carbon Co., Ltd., Nagoya 463-003, Japan

Platinum-based (Pt-based) catalysts are often used as electrocatalysts in fuel cells. In ourprevious study, it was indicated that the addition of high-crystalline single-walled carbon
nanotubes (SWCNTs) to Pt-based electrocatalyst leaded to increase the electrochemical surface
area (ECSA) [1]. However, the mechanism that the addition of SWCNTs in Pt-based
electrocatalyst increase the ECSA of the Pt-based electrocatalyst has not been clear. In this study,
the effect of SWCNTs on the electrochemical properties of Pt-based electrocatalyst areinvestigated by cyclic voltammetry (CV) under different scanning rates.
SWCNT-added Pt-based electrocatalyst was prepared as follows. Pt-based electrocatalyst
used was Pt/Vulcan XC-72 catalyst (50 wt.%-Pt, TEC10V50E, TANAKA KIKINZOKUKOGYO K.K.) and SWCNT additive used was SWCNT aqueous dispersion composed of
SWCNTs of 200 mg in water of 100 ml without dispersing agents (Meijo Nano Carbon Co.
Ltd.). Pt-based electrocatalyst and SWCNT aqueous dispersion were mixed with auto pestle for5 min. Then nafion and methanol were added and mixed by ultrasonication for 30 min. The
experimental parameter was the amount of SWCNTs; 5, 10, 15, and 20 mg for Pt-based
electrocatalysts of 200 mg.
The catalytic performance was evaluated by the charge (QH) which contributed to hydrogen
reduction reaction and ECSA based on CV. The CV were conducted in H2SO4 solution of 0.5
M well-degassed by Ar at 25°C under the condition of the scanning rate of 10 or 50 mV/s, andthe potential scanning rage from -0.25 to 1.00 V. The Ag/AgCl electrode, Pt-wire electrode with
0.5 mm in diameter and 57 mm length, and glassy carbon electrode with 10 mm in diameterand 55 mm length were used as a reference electrode, counter electrode, and working electrode,
respectively. The loading amount of Pt on the working electrode was 130 μg.
The QH and ECSA of Pt/Vulcan XC-72 catalysts with and without SWCNTs weresummarized in Table. 1. It was found that the addition of SWCNTs leaded to increase the QH
and ECSA at the scanning rates of 10 and 50 mV/s. Especially, the Pt/Vulcan XC-72 catalyst
with SWCNTs of 15 mg showed the highest QH and ECSA in the prepared catalysts. Comparedto Pt/Vulcan XC-72 catalysts without SWCNTs, the QH and ECSA of Pt/Vulcan XC-72 catalyst
with SWCNTs of 15 mg was approximately 1.3 times higher at the scanning rate of 10 mV/s.
Table 1. QH and ECSA of Pt-based electrocatalysts with and without SWCNTs.
𝑉𝑉𝑠𝑠 (mV⁄s)
10
50
2
Pt/Vulcan XC-72 : SWCNTs (wt.) QH (C)ECSA (m /g)
QH (C)ECSA (m2/g)
200 : 0
18.3
66.9
7.6
27.7
200 : 5
18.5
67.7
11.5
42.3
200 : 10
23.6
86.5
15.9
58.2
200 : 15
24.3
89.1
16.6
60.6
200 : 20
21.0
77.1
16.1
58.9
[1] K. Kishida, et al.: The 56th Fullerenes-Nanotubes-Graphene General Symposium, 2P-4 (2019).
Corresponding Author: K. Kishida, Tel: +81-532-44-1228, E-mail: kishida.kazuki@pes.ee.tut.ac.jp– 119 –

3P-21
Self-powered wireless optical transmitter based on triboelectric generator
with carbon nanotube thin film
○Masahiro Matsunaga1, Jun Hirotani2, Shigeru Kishimoto2, Yutaka Ohno1,2
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603,
Japan
2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

1

With the rapid growth of the field of the internet-of-things, the demand for sensor devices
has been predicted explosive increase [1]. The growing demand will lead to being a difficult
problem that is huge amounts of the time-consuming work for replacing the batteries. To solve
the issue, self-powered electronics have been attracted considerable attention in both thescientific and industrial communities. Energy harvesting, which converts small ambient energy
to the electricity, is a key to realize the self-powered system. Previously, we reported the highly
transparent and stretchable triboelectric generator (TEG) using carbon nanotube thin film. The
TEG is a kind of mechanical energy harvester based on the triboelectrification [2]. We obtained
high output power up to ~8 W/m2, which is enough to drive several tenses of LED chips [3].
Here, we constructed the self-powered signal transmitting system based on the TEG anddemonstrated the optical signal transmitting by the combination of different color LED chips.
The system can operate intuitively such as “tap” and “swipe”.
The transmitter was fabricated based on the TEG. The
TEG was composed of a carbon nanotube thin film
sandwiched with polydimethylsiloxane (PDMS) layers.
After spin-coating PDMS onto a plastic substrate, the CNT
transparent electrodes and connections were patterned on
the PDMS surface by the spray coating of CNT ink (Meijo
Nano Carbon, eDIPS ink) with a shadow mask as shownin Fig. 1. After connecting LED chips with the silver paste,
the top PDMS was spin-coated to cover the CNT electrode.
To enhance the performance, we then applied CF4 plasma
to modify the PDMS surface. The detail of the transmitterand operation will be discussed in the poster.
Acknowledgment: This work was supported by
JST/CREST (JPMJCR16Q2).
[1] Roadmap for the Trillion Sensor Universe (2013).
[2] Z. L. Wang, Mater. Today 20, 74 (2017).
[3] M. Matsunaga et al., The 55th FNTG symposium, 1P-8 (2018).
Corresponding Author: Y. Ohno
Tel & Fax: +81-52-789-5387,
E-mail: yohno@nagoya-u.jp– 120 –

Fig. 1 Schematic of the diagram andthe signal transmitter.

3P-22
Effect of surface oxidation of carbon nanotube electrodes instreaming potential-based generators○

Yuzuki Ando1, Ryohei Nishi1, Shigeru Kishimoto1, and Yutaka Ohno1,2

1

2

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Materials and Systems for Sustainability, Nagoya University, 464-8601, JapanThe voltage generation phenomenon called streaming potential occurs when a fluid isdriven by a pressure gradient along a charged surface. The streaming potential is potentially
useful for energy harvesting from fluid energy [1] as well as flow sensors [2, 3]. For theseapplications, the enhancement in electrochemical activity at the electrode/fluid interface isessential. In this work, we introduce the carbon nanotube (CNT) thin film, which are often used
as electrodes of electrochemical sensors because of the excellent electrochemical properties, as
the electrode of voltage generator. The effect of the surface functionalization is also investigatedto further enhance the electrochemical activity.
Fig. 1(a) shows a schematic structure of a generator device consisting of CNT electrodes
on a polyethylenenaphthalate (PEN)(b)
substrate. The generator device was (a)CNT Ag paste
Reservoirinserted into a silicone tube, and a load
resistance of 1 to 200 MΩ was connected.
PEN substrate
The output voltage was measured by a
Flow
н
R V
semiconductor device parameter analyzer
Ͳas shown in Fig. 1(b). Since a powerdriven pump could be a noise source, thefluid was driven by the gravity. Deionizedwater was used as the fluid and the flow Fig. 1(a) Schematic structure of generator
velocity was ~70 cm/s. We also carried out device, (b) experimental setup.
the electrochemical functionalization of the60
CNT surface in 2M H2SO4 to enhance the electron
50
transfer rate [4]. Fig. 2 shows the output power ofFunctionalized40
the voltage generators with as-fabricated andfunctionalized CNTs as a function of load30
resistance, respectively. The maximum output
20
power was enhanced to be 53 pW by the
As-fabricated10
functionalization from 6 pW for as-fabricated CNTelectrodes. In addition, the load resistance at which
0
0
50
100
150
200
the maximum power was obtained was reduced by
Load resistance (MW)the functionalization. These results suggest that Fig. 2 Output power of generator devices.
the resistance at the electrode/fluid interface was
reduced by the functionalization probably due to the enhancement in the electron transfer rate.
Acknowledgment: This study was partially supported by JST/CREST (JPMJCR16Q2).
Power (pW)

L

[1] R. Zhang et. al., Adv. Mater. 27, 6482 (2015).
[2] B. Bourlon et. al., Nat. Nanotechnol. 2, 104 (2007).
[3] R. X. He et. al., Nano Lett. 12, 1404 (2012).
[4] K. Nishimura et al., Electrochim. Acta 295, 157 (2019).
Corresponding Author: Y. Ohno
Phone & Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp– 121 –

3P-23
Study on one-dimensional stacking structure of polycyclic aromatichydrocarbon molecules encapsulated in single-walled carbon nanotubes bymolecular dynamics simulations(Ⅱ)○Ryo Nagai1, Yosuke Kataoka3 and Hironori Ogata 1,2
1
Graduate School of Sci. and Engin., Hosei University, Koganei, 184-8584, Japan
2
Research Center for Micro-Nano Technology, Hosei University, Koganei, 184-0003, Japan
3
Research Center for Computing and Multimedia Studies, Hosei University, Koganei,
184-8584, Japan
Single-walled carbon nanotubes (SWNTs) have hollow spaces of about several nm indiameter. Various functional molecules such as fullerenes can be encapsulated in the hollow
space, and it is expected that new functions will be developed by capsulation. It has beenreported that columnar layered polycyclic aromatic hydrocarbon (PAH) molecules such as
coronene encapsulated in SWNTs can exhibit unique luminescence properties depending on
their molecular orientations. We have been investigated the local structures and properties ofvarious kinds of PAH molecules encapsulated in SWNTs systematically and have clarified
that the difference of the chiral vector of SWNT can affect the stacking structure of PAH
molecules. Figure 1 shows the snapshots of coronene molecules encapusulated in SWNT ofdifferent chiral vector with almost the same diameter ((a) coronene@(16,4)SWNT and(b)coronene@(18,1)SWNT). It is suggested that the difference in elastic modulus of SWNT
in the direction perpendicular to the long axis of SWNT may affect the stacked structure ofencapsulated PAH molecules. In this study, the elastic moduli of SWNT with different chiral
vector are calculated by molecular dynamics simulation and the correlation between thestacking structure of encapsulated PAH molecules (perylene, corannulene, or coronene) andthe elastic modulus of SWNT were investigated.
Detailed results will be discussed at the conference.

(b)

(a)

Figure 1. Snapshots of (a) coronene@(16,4)SWNT and (b)coronene@(18,1)SWNT at 300 K.
References:[1] Miho Fujihara, et al., J. Phys. Chem. C 116(2012)15141−15145.
[2] Alexander I. Chernov et al., Phys. Status Solidi B 251(2014)2372–2377.
[3] Y. Sakane, et al., AIP ADVANCES 5 (2015)117113.
[4] Y.Joko, et al., Phys. Chem. Chem. Phys.19(2017)27704-27715.
[5] T.Koyama, et al., J.Phys. Chem. C 122(2018)5805-5812.
Corresponding Author: H. Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp– 122 –

3P-24Brighter Near-IR Emission of Single-Walled Carbon Nanotubes Modified
with a Cross-Linked Polymer Coating○Yukiko Nagai , Masako Yudasaka , Hiromichi Kataura2, Tsuyohiko Fujigaya1,3,4
1

2

Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka,
Fukuoka 819-0395, Japan. 2Nanomaterials Research Institute, National Institute of Advanced
Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8565, Japan. 3WPI
4
Center for Molecular Systems, Kyushu University.
I2CNER, Kyushu University.

1

Single-walled carbon nanotubes (SWNTs) have unique near-infrared (NIR) absorption andphotoluminescence (PL) properties, and expected as a next-generation NIR emission imaging
probes. However, in a hydrophilic environment such as in vivo, it is difficult to maintain strong
PL intensity because it is quenched by energy transfer due to aggregation of SWNTs andapproach of water to the SWNT surface.Therefore, a smart functionalization strategy to realizeboth strong NIR emission and stable dispersion at the same time is strongly required.
Recently, we have reported a unique method, denoted ascarbon nanotube micelle polymerization, to functionalize
SWNTs with cross-linked polymer gel [1]. In this study, thevarious monomers were tested to fabricate gel-coated SWNT
hybrid to design more hydrophobic SWNT/gel interface forbrighter NIR emission (Fig. 1). 
The PL intensity normalized by the absorption intensityof the gel-coated SWNT hybrids is plotted as a function of
the absorption peak wavelength in Fig. 2. It is known that a

Fig. 1. NIR emission image of gelcoated SWNT dispersion [2].

more hydrophobic environment induces a blue shift of theabsorption owing to reduction of the dielectric constant.
Therefore, the good linearity in Fig. 2 strongly indicates thatthe hydrophobicity of the SWNT environment can becontrolled by changing the chemical structure of themonomer, and a more hydrophobic environment results inbrighter PL emission of the SWNTs [2]. As a result, gelcoated SWNT hybrid achieved about 1.5 times stronger PL
intensity than that of the PEG phospholipid (PLPEG)/SWNT
complex that was used for vascular imaging [2].

Fig. 2. Plot of the normalized PL
intensity of gel-coated SWNT as afunction of absorption wavelength.

[1] T. Fujigaya et al., RSC. Adv. 2014, 4, 6318.
[2] Y. Nagai and T. Fujigaya et al., Chem. Commun. 2019, 55, 6854.
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842, E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp– 123 –

3P-25
Dependence of surface roughness of Cu foil on the growth ofpristine and boron doped graphene
Mariko Shamoto, ○ Shunji Bandow
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Intensity

A well-flattened /or single crystalline Cu substrate is generally used for graphene growthby thermal CVD. In order to improve a flatness of Cu surface, we carried out to anneal Cu
foil in a low pressure hydrogen flow (3 kPa, 20 sccm) at 1000 °C for 6 hours. By using such
Cu foil, although several layered graphene film certainly grew, reproduceability was
somewhat low; that is, faint /or no Raman signal was often observed. By the SEM
observation, graphene was usually grown on the edge of the copper domain or aroundsomewhat bumpy rough surface area, and maybe atomically defective parts.
For the purpose of making conductive transparent film, large area and several layered
graphene films are needed instead of a single /or a few layered crystalline small size graphene.
In the present study, we focus to make several layered graphene which is uniformly coveredon the Cu substrate. Furthermore, it is necessary to improve reproduceability of the growth
and applicable to heteroatom doping (at the present we selected B-dope). As noted in theformer paragraph, graphene islands are usually grown at some irregular points. Hence weintend to make some irregularities on the surface of Cu (4N, 0.05 mm thick) by blasting
diamond powder.
Blasting was conducted by
Gr/IRM 40
Cu/IRM 40 blasted
965°C, 20 kPa
Cu 4N
following way: we sank Cu foil in
Gr/IRM 40 blasted
water including diamond powder
Cu/IRV 120 blasted
Gr/IRV 120(TOMEI DIAMOND, IRV 120 /or
IRM 40), and carried out high
Gr/IRV 120 blasted
power
sonication
using
an
Cu/as‐purchased
Gr/as‐purchased
ultrasonicatorofNanoruptor,
Gr/as-purchased (w/o blast)
NR-350. By using such a blasted
Cu foil, thermal CVD of methane as1000 1500 2000 2500 3000
-1
Raman shift (cm )carbon source /or in case of B-dope
Fig. 1. Raman spectra of graphene on diamond powder
we add a vapor of pheneylboronic
blasted Cu foil and their SEM Images.
acid/
was
carriedout
atdepressurized condition of 20 kPa. Brief results examined by Raman scattering were shownin Fig. 1, in which one can see that multilayered graphene was well-grown on the Cu blasted
by diamond powder rather than un-blasted one. Experimental and detailed results including
boron doping studied by XPS will be opened.
Corresponding Author: S. Bandow, E-mail: bandow@meijo-u.ac.jp, Tel: +81-52-838-2404– 124 –

3P-26Highly uniform single-layer graphene CVD on 2-inch r-plane sapphire○Yuki Ueda1, Jumpei Yamada1, Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Large-size single-layer graphene is usually obtained on copper-based catalyst bychemical vapor deposition (CVD). However, the transfer process, which is mandatory for thedevice fabrication, largely deteriorates the grown graphene. Direct growth of graphene on adielectric substrate is the best answer to solve the problem. We found that the growth rate ofgraphene on r-plane sapphire is faster than c-plane or a-plane sapphire [1]. The r-plane sapphire
has a strong catalytic effect and enables to decompose the source materials. In this study, we
attempted that direct growth of highly uniform single-layer graphene on 2-inch r-plane sapphireby low-pressure CVD without a metal catalyst.
Graphene was directly grown on r-plane sapphire at 1210 oC by low-pressure CVD
without metal catalyst. Mixture gas of nitrogen, hydrogen, and diethylacetylene (C6H10: 3Hexyne) was flown to a reactor for the growth of graphene. Growth time was changed between
7 and 180 min.
Figure 1 shows (a) surface photograph of directly-grown graphene and (b) theircorresponding Raman signals. Almost the same Raman signals at each measurement point
indicate that highly-uniform graphene was grown on all over the 2-inch r-plane sapphire. The
graphene was estimated to be single-layer by AFM height analysis of the islands grown in ashort time. Figure 2 shows growth time dependence of Raman spectra. The Raman spectra were
not changed for the growth time above 60 min. It was observed by AFM that the sapphiresurface was covered with graphene with growth time of 60 min. These results show thatgraphene growth terminated when the whole surface of sapphire was covered with single-layer
graphene. It is because the decomposition of source materials is decreased when the catalytic
effect of r-plane sapphire was covered with graphene. Therefore, highly-uniform single-layer
graphene was obtained on the whole surface of 2-inch r-plane sapphire.

Fig. 1 (a) Surface photograph of directly-grownFig. 2 Growth time dependence

graphene and (b) their corresponding Raman signals.

of Raman spectra.

Acknowledgement: This work was supported in part by JSPS KAKENHI Grant Numbers 15H03558, 26105002.
[1] Y. Ueda et al., Appl. Phys. Lett. 115, 013103 (2019).
Corresponding Author: Y. Ueda, Tel: +81-52-838-2387, E-mail: 173441501@ccalumni.meijo-u.ac.jp– 125 –

3P-27
Preparation of IrO2 nanoparticles on CVD graphene by hydrothermal
method○Shuhei Ogawa, Seiya Suzuki, Masanori Hara, Masamichi Yoshimura
Graduate School of Engineering, Toyota Technological Institute, Nagoya 468-8511, Japan

Water electrolysis is a promising technology to store energy as hydrogen gas due to thepassage of an electric current. Iridium dioxide (IrO2) works as the catalyst for oxygen
evolution reaction (OER) at the cathode in water electrolysis. The high overpotential andsmall specific surface area of IrO2 limit the practical use. In a previous report, reduced
graphene oxide (RGO) as a supporting material (IrO2/RGO) increases catalytic activity of
IrO2 by nanoparticle (NP) formation [1]. It is also claimed that the size of metal NPs, which isimportant for catalytic activity, depends on the type or density of defects in carbon-based
supporting materials in density functional theory (DFT) studies [2]. To clarify this relationshipexperimentally, we use a graphene with few defects grown by chemical vapor deposition as asupporting material. Defects are introduced by ozone treatment. We examine the relationshipbetween the size of IrO2 and the density of defects in CVD graphene.
The preparation process of IrO2/graphene/SiO2/Si issummarized in Fig. 1. A graphene was grown on copper(a)substrates by CVD [3]. The graphene was transferred
onto a SiO2/Si substrate by a bubble transfer method [4],(b)then defects were introduced by ozone treatment. IrO2
NPs were synthesized on it in alcohol/water solution(c)through the following two steps; (1) hydrolysis of iridium
precursor (IrCl62-) at 80 ºC, and (2) crystallization of IrO2 Fig.1. Schematic illustration of (a) grapheneon graphene by hydrothermal method at 150 ºC. Surface grown by CVD, (b) transferred graphenemorphology of IrO2/graphene was observed by scanning and (c) IrO2/graphene deposited byhydrothermal method.
electron microscopy (SEM)  and atomic force
microscopy (AFM).
(a)
SEM image shows the formation of NPs on thegraphene. NPs were dispersed only on the graphene
covered areas. Fig. 2(a) shows an AFM image of the IrO2
NP on graphene. Fig. 2(b) shows the crosssection of the
NP. The size of NP is ~ 8.8 nm, which is larger than thatin the case of RGO (~ 1.6 nm [1]). The present study(b)suggests that the size of IrO2 NPs can be controlled by thedensity of defects in the supporting graphene.
[1] D. Fan et al., Int. J. Hydrogen Energy, 38, 9217 (2013).
[2] M. Matsutsu et al., Phys. Chem. Chem. Phys., 18, 25693 (2016)[3] S. Suzuki et al., Coatings, 7, 206 (2017).
[4] J. Lee et al., Coatings, 7, 218 (2017).
Corresponding Author: Masamichi Yoshimura
Tel: +81-52-809-1852
Fig. 2. (a) AFM image of the IrO2/graphene/SiO2/Si.
E-mail: yoshi@toyota-ti.ac.jp(b) height profile along the line in (a).

– 126 –

3P-28B, N-codoped Reduced Graphene Oxide as a Support for IrO2 as Active
OER Electrocatalyst○Prerna Joshi, Rohit Yadav, Yuki Matsuoka, Masanori Hara, Masamichi Yoshimura
Surface Science Laboratory, Toyota Technological Institute, Nagoya, 468-8511, Japan

A great amount of efforts has been devoted to tailor the band gap of graphene, renderinggraphene suitable for application in energy devices. One such approach is doping of graphenewith heteroatoms [1]. Often doped with boron (B) and nitrogen (N), modification of graphenealters its electronic structure and changes its semi-metal nature to semi-conductor. In our group,
such modified graphene is used as metal oxide catalyst support for electrochemical water
splitting in water electrolyzers (WEs) for hydrogen production. Practically, water splitting islimited by oxygen evolution reaction (OER) at the anode due to its complex reaction kinetics
and high over-potential for which metal oxides catalysts such as IrO2 come to rescue [2].
However, high cost and low natural abundance of IrO2 limit its extensive use. Hence, using an
economical support with modified electronic structure like heteroatom-doped graphene appears
to be one potential solution. Present research aims to study the effect of the codoping of B and
N on the activity of IrO2 towards OER.
Boric anhydride, urea and graphene oxide (prepared by synthetic graphite via modified
Hummers’ method) were used to prepare B, N-codoped reduced graphene oxide (BN-rGO) via
pyrolysis in N2 atmosphere at 1000 oC for 60 min. Further, IrO2 nanoparticles (nps) were
decorated onto doped rGO by hydrothermal synthesis at 150 oC for 4 h using H2IrCl6 as the
precursor (IrO2-BN-rGO). Prepared catalysts were characterized by X-ray photoelectron
spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive X-ray
spectroscopy (EDX) and evaluated for their electrochemical activity towards OER by cyclic
voltammetry (CV) and linear sweep voltammetry (LSV).
XPS analysis of IrO2-BN-rGO revealed the formation of B-Nbond along with the presence of C-C bond (rGO). Further,
EDX analysis confirmed the existence of B and N in 9.4 and11.5 wt. %, respectively. EDX and TEM confirmed the uniform
dispersion of IrO2 over BN-rGO sheets with an average particle
diameter of 1.8 nm (Fig. 1). Electrochemical analysis was
carried out for the prepared catalysts by LSV with rotating disk
electrode (RDE) system in 0.5 M H2SO4 solution and showed
high durability for ~3000 cycles with a retention in current.
[1] M. Alattas et al. Scientific Reports, 8, 17689 (2018).
[2] T. Reier et al. ACS Catalysis, 2, 1765 (2012).
Corresponding Author: Dr. Prerna Joshi
Tel: +81-52-809-1852, Fax: +81-52-809-1851
Web: https://www.toyota-ti.ac.jp /surface/E-mail: joshiprerna2011@toyota-ti.ac.jp– 127 –

Fig. 1. TEM image of IrO2 nps
decorated on BN-rGO sheet.

3P-29Growth of single-crystalline MoS2 on 1D and 2D boron nitride systems○Taikou Murakami1, Hayato Arai1, Yongjia Zheng1, Yang Qian1,
Taiki Inoue1, Rong Xiang1, Shohei Chiashi1, Shigeo Maruyama1,2
1 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2 Energy Nano Engineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8564, Japan
Transition metal dichalcogenides (TMDs) have attracted great attention as a twodimensional (2D) material. In addition, a 1D counterpart of TMD layers, which is known as
TMD nanotubes (NTs), has the potential to be used as electronic [1], thermoelectric [2], andphotovoltaic devices [3]. However, conventional growth methods only provide TMDNTs withlarge layer numbers and diameters (> 50 nm). We have recently reported the growth of a singlewalled MoS2NT with 5 nm-diameter by using heterostructure of boron nitride (BN) and a
SWCNT (BN/SWCNT) as a template (Fig. 1a) [4]. BN is considered as a favorable platformfor TMDs due to its large bandgap and atomic smoothness. To realize long and singlecrystalline TMDNTs required for applications, the crystal size of TMDs needs to be increased.
In this study, we performed comparative growth of MoS2 on both 1D BN/SWCNTs andexfoliated 2D BN layers. We synthesized suspended SWCNTs over trenches, followed by
growing BN coaxially on them. Then, MoS2 was grown by using MoO3 and S as precursors.
The SEM (Fig. 1b) and Raman mapping images (Fig. 1c,d) indicate growth of MoS2NTs along
the templates. We also synthesized MoS2 on exfoliated BN (Fig. 1e). SEM image (Fig. 1f)
shows triangle-shaped MoS2 flakes on BN. By tuning growth conditions, the flake size of MoS2
was increased. Feedback of this result to the 1D system is expected to realize long MoS2NTs.

Fig. 1 (a) Schematic image, (b) SEM image, and (c,d) Raman mapping images of suspended MoS2/BN/SWCNT.
The intensity of (c) G-band of SWCNT and (d) A1g peak of MoS2 is denoted in the images. (e) Schematic imageand (f) SEM image of MoS2 grown on exfoliated BN.
[1] R. Levi et al., Nano Lett., 13, 3376 (2013). [2] H. Kawai et al., Appl. Phys. Express., 10, 015001 (2017).
[3] Y.J. Zhang et al., Nature, 570, 349 (2019). [4] R. Xiang et al., arXiv :1807.06154.
Corresponding Author: S. Maruyama, Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp– 128 –

3P-30
Deposition of MoS2 layer on GaN semiconductor for photoresponsive device
application○Pradeep Desai1, Ajinkya K. Ranade1, Mandar Shinde1, Bhagyashri Todankar1, Masaki
Tanemura1, Golap Kalita1, 2
1

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 4668555, Japan
2
Frontier Research Institute for Material Science, Nagoya Institute of Technology, Nagoya 466-8555,
Japan

Lattice mismatch between molybdenum disulfide (MoS2) and gallium nitride (GaN) is only
0.8%, hence it is feasible to develop an epitaxial heterostructure for novel device application.
In our study, epitaxial oriented growth of MoS2 on GaN substrate were synthesized to study its
photoresponsive device application. A thin film of MoS2 was deposited on GaN substrate by
the sulfurization process of molybdenum oxide (MoO3).
The method of synthesis of MoS2 involves two stage. Firstly a thin film of MoO3 was
deposited on GaN substrate using Thermal Evaporation Technique at 40 A of current under ~1×10-4 Pa vacuum condition for 3 minutes. Subsequently MoS2 was synthesized bysulfurization process at 750°C and in the Ar+H2 atmosphere using a quartz tube having alength 85 cm. On top of ceramic boat the MoO3 deposited GaN substrates was kept facing
downwards. Sulphur (nearly 1g) was kept in Low Temperature Furnace (LTF). Fig. 1 shows theball and stick diagram of MoS2 on top of GaN substrate. Fig. 2 shows the raman spectra of the
MoS2-GaN heterostructure. The peaks corresponding to E2(High) and A1(LO) of GaN layer
were observed at 570.2 and 749.2 cm-1, respectively. Additional small intensity peaks wereobserved at lower wavenumber as shown in the inset which corresponds to the E2g and A1g
peaks of MoS2 layer at 385 and 412 cm-1, respectively. The spectroscopy analysis confirmed
the formation of MoS2 layers on GaN and their heterostructure.

Fig 1: Ball and stick diagram of theheterostructure of MoS2 on GaN

Figure 2: Raman Spectra of MoS2 on GaN
heterostructure

Corresponding Author: Pradeep Desai
Tel: +81-52-735-5216, Fax: +81-52-735-5216,
Web: http://www.nitech.ac.jp/
E-mail: desai.pradeep@zoho.com– 129 –

発表索引
Author Index

Author Index<A>
Ago, Hiroki

1P-9

1P-28

2P-9

3-6

Aji, Adha Sukma
Ajinkya, Ranade
Akashi, TakayaAndo, ChisatoAndo, Yuzuki
Aoyagi, Shinobu
Arai, Hayato
Araki, Nayu
Asai, Nanami<B>
Bae, Weon Ko
Bandow, ShunjiBao, Jianfeng
Beppu, Kou
Blankschtein, Daniel<C>
Chiashi, Shohei<D>Date, Remi
Desai, Pradeep<E>
Eda, Junko
Ehara, MasahiroEndo, Takahiko<F>
Fajardo, Mario E.
Fujigaya, Tsuyohiko
Fujii, Yasumaru
Fujita, Masahiro
Fujiwara, Yuji
Fukuhara, Kengo
Fukui, Akihito
Fukunaga, Kengo
Funayama, Keita
Futaba, Don. N

2P-9
1-10

<G>
Gao, Weilu
Gao, Xiang
Gao, Yanlin
Goto, Ryosuke

1P-11 2P-14 3P-12
1-1
1P-30
1P-16

3P-17
3P-4
3P-22
3P-9
3P-29
1P-13
1P-20

3P-10
3P-25
1P-1
2P-12
2-3

2S-1

2P-19 2P-27

3P-19
1-10

1P-11

3P-30

2P-3

3-7
1P-5

1P-6

3P-18

2P-10
1P-4

3-9

3P-24

3-3
2-1
3P-16
2P-3
2P-12
2-1
2P-1
1-1

2P-14 3P-13<H>Hachiya, Kengo
Hanium, Maria Kazi
Hara, Masanori
Harigai, Toru
Hasegawa, Tsuyoshi
Hashimoto, Takeshi
Hashizume, Yoichiro
Hata, Koichi
Hatsugai, Yasuhiro
Hayamizu, Yuhei
Hayashi, Hironobu
He, Xing
Hidenori, Machiya
Hirano, Atsushi
Hiromura, Masatoshi
Hirotani, Jun
Hisama, Kaoru
Honda, Hiroki
Honma, Chisyu
Horiuchi, Kanako
Hoshino, Tohru
Hosoe, Kento
Hosogi, Kazuya
Hotta, Takato<I>
Iba, Hideki
Ichinose, Nanami
Ichinose, Yota
Igimi, Shinji
Iida, Satoshi
Ikemizu, Hiromu
Imahori, Hiroshi
Inayama, Shunya
Inoue, Taiki
Inoue, Yoku
Inukai, Daiki– 131 –

2P-8
1P-14
2P-24 2P-25 3P-28
3P-20
2P-22
3P-20
3P-15
2-5
3-5
3S-1

3-1

3P-7

2P-1

3P-21

2-6
3P-5
2P-20
1P-22
2P-21
1-4
3P-11
1P-9
3P-7
1P-11 2P-14 3P-12
2-5
3P-19
1P-2
1P-8

3P-6

2S-2
2P-7
2P-3

2P-14 3P-13

2P-27
1P-8
2-5
2-8
1P-21
2P-19 2P-27 3P-29
1P-2
3-6

1P-16

Ishii, Akihiro
Ishii, Yosuke

2P-20
1P-19 1P-20 1P-21
2P-22 3P-19

Ishikawa, Sae
Isobayashi, Atsunobu
Isobe, Hiroyuki
Itami, Kenichiro<J>
Jeon, Il
Jeon, Sugyeong
Jippo, Hideyuki
Joshi, Prerna<K>
Kainuma, Yoshiki
Kajino, Yuto
Kalam, Md Abul
Kalita, Golap
Kameyama, Tomoya
Kanda, Naoyuki
Kaneko, Toshiro
Kasama, Yasuhiko
Kashio, Tatsuya
Katagiri, Atsuhiro
Kataoka, Yosuke
Kataura, Hiromichi
Kato, Toshiaki
Kato, Yuichiro
Kauppinen, Esko
Kawachi, Kazuhiko
Kawahara, Kenji
Kawai, Hideki
Kawasaki, Shinji
Kazuya, Kunoh
Khaniya, Sharma Aliza
Kishida, Hideo
Kishida, Kazuki
Kishimoto, Shigeru
Kitaura, Ryo
Ko, Jeong Won
Koayashi, Yu
Koishi, Tomonari
Kojima, Kana
Komatsu, Natsumi
Komuro, Tomohiko
Kondo, Kohei

1P-21
3P-7
2-1
2P-12

2-2
3P-10
2P-18
2P-25 3P-28

3P-18
1P-7
1P-14
1-10

2-7

3P-30

1-6
3P-8
1-6

1P-3

3P-5

Kondo, Shunsuke
Konno, Yui
Kono, Junichiro
Kosaka, Mayumi
Koshino, Mikito
Koyama, Takeshi
Koyano, Bunsho
Kozawa, Daichi
Kozeki, Takahiro
Kubo, Toshitaka
Kuroda, Kiyonori
Kusunoki, Michiko
Kuwahara, Shota
Kuwahara, Yuki
<L>
Li, Chao
Li, Lain-Jong
Li, LingchangLim, Hong En
Liu, Dan
Liu, Zheng

2P-22
3-7
1P-11 2P-14 3P-12
1P-23 2P-23
3S-2
1P-1

3-6

2P-19
2-3
2P-12
2P-6
3-7
1P-1
2P-4

3P-2

1P-10

1-6
1S-4
1-1
1P-6
3P-8
1P-6

2P-5

3P-8

1P-6

2-1

2P-5

2P-29

3-4

1-8

3-3

3P-9
1P-26
1P-11
3P-23
1-3

1P-22 3P-24

1-6

1P-3

3P-5

2P-20
2-2
3P-9
1P-9

1P-28

3-6

3P-12
1P-19 1P-20 1P-21<M>
Maeda, Taisei
Maeda, Yutaka
Magata, Soichiro
Mahyavanshi, Rakesh
Maki, Hideyuki
Manabe, Shun
Maniwa, Yutaka
Maruoka, Masato
Maruyama, Mina
Maruyama, Shigeo

2-5
1-7

1P-17

1P-1

3-6

2P-2

Maruyama, Takahiro

2P-21
1-10
3P-1
2P-22

3-5

2-2

2P-19 2P-27

3P-6

3P-11 3P-29

1-7

1P-15 1P-17
2P-2

2P-16 2P-17 3P-26

3P-21 3P-22
2P-6

3P-10
1-9

3-7

1P-25 1P-26

3P-20
1P-8

2P-29

2P-7

Matsubara, Manaho
Matsuda, Jyunko
Matsuda, Kazunari

1P-6

1P-1
1P-6
1P-11 2P-14
1-4
1P-21 2P-22

2P-14 2P-15
1-2
1P-6
3P-3

Matsumoto, Kaisei
Matsumoto, Keiichiro
Matsumoto, Rika
Matsunaga, Masahiro
Matsuno, Taisuke– 132 –

1-4
3P-14
1P-28
3P-21
2-1

2P-5

2P-8

Matsuo, Hiroyuki
Matsuo, Yutaka
Matsuoka, Hirofumi
Matsuoka, Yuki
Matsuoka, Yuya
Mieno, Tetsu
MInamimoto, HiroMisaki, Ai
Miwa, Kazuhira
Miyata, Yasumitsu
Miyauchi, Yuhei
Mizoguchi, Tomonari
Momin, Md. Abdul
Momose, Takamasa
Morikuni, Yuki
Moritomo, Yutaka
Motoyama, Amane
Murai, Yuya
Murakami, Taikou
Murakoshi, Hiyori
Murakoshi, Kei<N>
Nagai, Kohei
Nagai, Ryo
Nagai, Shigekazu
Nagai, Yukiko
Nagase, Shigeru
Nakagawa, Kenta
Nakagawa, Yasuto
Nakahara, Hitoshi
Nakai, Yusuke
Nakajima, Haruna
Nakajima, Minako
Nakanishi, Yusuke

1P-12 2P-13
2-2

2-9

1-9

2P-5

2P-11

3P-28
1P-12
1P-14 1P-18
1-5

Nishi, Ryohei
Nishida, Jin
Nishidome, Hiroyuki
Nishihara, Taishi
Noguchi, Hironaga
Norimatsu, Wataru
Nugraha, Ahmad R. T.

2P-9

3P-22

1-2
2P-3
2P-12
3-1

3P-7

1P-1
2-4

2P-28

1P-15
3P-9
1-9

1P-5

1P-6

2P-5

3P-4

3P-18

1P-6

2S-3

2P-5

2P-8

2P-12

3P-3

3-5

<O>
Ogata, Hironori
Ogawa, Shuhei
Ogura, Tomohiro
Ohfuchi, MariOhno, Yutaka

1P-18

3P-23
3P-27
1P-5
1P-24 2P-18
1-4

2P-1

2P-9

3P-21 3P-22

Oka, Masayoshi
Okada, Hiroshi
Okada, Mitsuhiro
Okada, Morihiro
Okada, Ryotaro
Okada, Susumu

2P-10
2P-24
3P-3
1P-28
2P-7
3P-29
3-7
1-5

Okubo, Hitomi
Omachi, Haruka
Ooishi, Yuya
Oshima, Shuntaro
Oto, Kenichi
Otsuka, Keigo

2P-3
3P-23
2-5

3P-16
2-2

2P-11

3P-9

1-8

1P-30

3-3

3-5

3P-11

1P-11

2P-3

2P-6
2P-27
3P-12

1-4
3-2
3-8
1P-7
2P-19 2P-20

3P-24

<P>
Pichler, Thomas
Pratama, Fenda Rizky
Pu, Jiang

3-7
3P-1
1P-4
2-5
2-1

3I-2
1P-29 2P-26
1-9

1P-5

2P-5

3P-4

3P-6
1-4
1P-6

2P-5

3P-4

<Q>
Qian, Yang

3P-29

3P-8

Nakano, Takayuki
Nakashima, Asato
Nakashima, Naotoshi
Nakayasu, Takanori
Namazu, Takahiro
Naritsuka, Shigeya

1P-2

<R>
Rahman, Mohammad Jellur
Rajan, Ananth Sharma
Ranade, Ajinkya

1P-16

1P-26
1-2
3-2

2-3
3P-30

2P-12
1P-25 1P-26

2P-2

2P-16 2P-17 3P-26

Niidome, Yoshiaki
Niimi, Yuta

1P-18

3-9
1-7

<S>
Saeki, Mayumi
Saida, Takahiro
Saito, Kensuke– 133 –

2P-2

2P-17

2P-2

2P-16 2P-17

1P-1

Saito, Riichiro

1P-29

2-4

2P-26

2P-28 2P-29

3-4

1S-2

Saito, Susumu
Saito, Takeshi
Saito, Tetsuki
Saito, Yahachi
Sasaki, Ryo
Sasaoka, KenjiSato, Hideki
Sato, Hideyuki
Sato, Sota
Shamata, Mariko
Sharma, Kamal Prasad

3-8
1P-10
1P-6
2-5
3-2
2P-15
2P-21 3P-16
1P-23
2-1
3P-25
1-7

1P-17

2P-2

<T>
T., Hung Nguyen
Tabata, Kento
Tachi, Suzuka
Tadokoro, Yukihiro
Takaguchi, Yuhei
Takahashi, Hidenori
Takahashi, Kazuhiko
Takahashi, Mikako
Takahashi, Togo

2-7
2-2
3P-11
1P-3
1P-3
2P-1
2P-6
3P-2
3P-30
1-4

2P-12
1S-5
1-9

1P-5

2P-5

3P-4

2P-16 2P-17

Sharma, Subash
Shawky, Ahmed
Shiga, Takuma
Shiina, Satoru
Shima, Takuya
Shimaoka, Keiichi
Shimizu, Tetsuo
Shimura, Eriko
Shinde, Mandar
Shinohara, Hisanori
Shinokita, Keisuke
Shiraki, Tomohiro
Strano, Michael S.
Suenaga, Kazu
Sugai, Toshiki
Sugita, Mariko
Sugita, Tomoko
Sugizaki, Yoshiaki
Suzuki, Seiya
Suzuki, Tomoko
Suzuki, Yuji

Takakura, Akira
Takei, Kuniharu
Takenobu, Taishi

1P-8

3P-8

Takeuchi, Yu
Takikawa, Hirofumi
Tambo, Haruto
Tanaka, Daichi
Tanaka, Kenya
Tanaka, Koichiro
Tanaka, Takeshi
Tanemura, Masaki
Taniguchi, Takashi
Tashiro, Kosuke
Terashima, Wataru
Thanh, Cuong Nguyen
Tian, Yuan
Tnaka, Hiroya
Todankar, Bhagyashri
Tomanek, David
Toyama, Kiyohiko
Toyoda, Masayuki
Tsutsui, Masato
Tsuyuguchi, Yohei
Tsuzuki, Mayumi

1P-19
3P-20
3-7
1P-9
2P-8
2P-3
1-3

1P-22

1-10

2-7

3P-30

1P-6

1P-8

3P-6

3P-19
2P-20
3-3
2P-26
2P-1
3P-30
3P-8
1P-23
3-8
1P-19
1P-2
1-3

3P-3
1P-4

3-9

2-3
3P-8
2P-4

3-2

1-3
1-3
3P-7
3P-27

3P-2

<U>
Uchida, Kento
Uchida, Yuki
Uchimura, Shunsuke
Uchiyama, Fumiaki
Uchiyama, Yosuke
Ueda, Yuki
Ueji, Kan

1P-15

2-4

1P-9
1-2
3-2
2P-6
1P-25 3P-26
1P-11 1P-12 2P-13
3P-12 3P-13

3P-1

1P-16

2P-3

Ueno, Hiroshi
Ueno, Keiji
Ukhtary, Muhammad

2P-11

Umeyama, Tomokazu

2-8

<V>
Viet, Xuan Nguyen

3I-1

3P-9

3P-6
1P-29 2P-26 2P-29
3-4

2P-28

2P-4
2P-1
1-9
3P-1
1P-16
1P-19
3P-4

<W>
Wada, Naoki
Wakabayashi, Tomonari– 134 –

1P-5
2P-10

2P-5

Wang, Guowei
Wang, Tong
Warner, Jamie H.
Watanabe, Hikaru
Watanabe, Hiromichi
Watanabe, Kenji
Watanabe, Yuhdai
Watanabe, Yusuke<X>
Xiang, Rong
Xu, Bin
Xu, Ming<Y>
Yadav, Rohit
Yagi, Takashi
Yamada, Hiroko
Yamada, Itta
Yamada, Jumpei
Yamada, Michio
Yamada, Momoko
Yamada, Tomoyuki
Yamada, Yasuhiro
Yamaguchi, Yoshiki
Yamamoto, Daichi
Yamamoto, Daiki
Yamamoto, ShunYamamoto, Takahiro

1-3

1P-22

Yuge, Ryota
Yuhara, Junji
Yumura, Motoo

2P-28
2-3
3P-17
1P-6

1P-8

3P-6

2-5
1P-21

2P-19 3P-29
1P-3
1-1

<Z>
Zhang, Jinjiang
Zhang, Mengmeng
Zhang, Wenjin
Zhang, Yan
Zhao, PeiZhao, Xiang
Zheng, Yongjia
Zhou, Ruifeng
Zolotoukhna, Tatiana
Zubaidi, Ayar Al

2P-25 3P-28
1P-12 2P-13
2-6
3P-19
1P-25 3P-26
3-7
1P-27
1P-5

1-9

1P-7
3P-5
1P-26
1P-17 2P-16
2P-19
1P-13 2P-14 2P-15
1P-5
3P-17
3P-15
1P-11 1P-12

2P-3

2P-13 2P-14 3P-12
3P-13 3P-18

Yang, Jun
Yang, Xiao-Yu
Yasuda, Satoshi
Yomogida, Yohei

1-2
2P-11
2P-7
1P-11 1P-12

2P-3

2P-13 2P-14 3P-12
3P-13 3P-18

Yoshida, Akari
Yoshimura, Masamichi

2P-14 3P-13
2P-24 2P-25 3P-27
3P-28

Yu, Boda
Yu, YunYudasaka, Masako

1S-3
1S-1

1-4

3P-14 3P-15

Yamashita, Kenichi
Yamashita, Taishi
Yamazaki, Nanami
Yanagi, Kazuhiro

1P-23 2P-23

3-9
2P-11
3P-24
– 135 –

1-5
1-1
1P-6
3P-3
3-7
3-7
3P-29
1-5
1P-27
1P-19

2P-5

2P-8

複写をご希望の方へ
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2019 年 9 月 3 日発行

第 57 回フラーレン・ナノチューブ・グラフェン総合シンポジウム
講演要旨集≪フラーレン・ナノチューブ・グラフェン学会≫〒113-8656 東京都文京区本郷 7-3-1
東京大学大学院工学系研究科 機械工学専攻
丸山研究室内Phone/Fax：03-3830-4848
E-mail：fntg@photon.t.u-tokyo.ac.jp
URL：http://fullerene-jp.org
印刷 / 製本 名古屋大学消費生活協同組合 印刷部– 136 –

POWERED BY Neo Engine

JEM-ARM200F
原子分解能分析電子顕微鏡

NEOARM“NEOARM”
は、当社独自の技術で開発されたと冷陰極電界放出形電子銃（Cold-FEG）
高次の収差まで補正可能なを標準搭載し、新型球面収差補正装置（ASCOR）
200 kVの高加速電圧だけでなく
30 kVの低加速電圧においても原子分解能での観察を実現しました。

本社・昭島製作所 〒196-8558 東京都昭島市武蔵野3-1-2 TEL：
（042）
543-1111（大代表） FAX：
（042）
546-3353
www.jeol.co.jp

ISO 9001・ISO 14001 認証取得

JEOLグループは、「 理科学・計測機器」「 産業機器」「 医用機器」の3つの事業ドメインにより事業を行っております。
「理科学・計測機器事業」電子光学機器・分析機器・計測検査機器 「産業機器事業」半導体関連機器・産業機器 「医用機器事業」医用機器

モデルチェンジ ～スマートなデザインに簡単操作～

BRANSON 超音波ホモジナイザー
長くご愛顧いただいておりますBRANSON超音波ホモジナイザーで新たなモデルが誕生しました。
主な特長
1.電気エネルギーから超音波振動への変換効率が95%以上→ 無駄なエネルギーロスが小さく、安定した振幅が得られる。
2.通常では、液体の種類によって振幅が安定し難い。
→ 条件を変えても一定の振幅を保つ機能がついている。
3.ジュール（watt×sec）による発振制御が可能→ Total何ジュールでこの処理が完了するという情報が論文に掲載できる。
20kHz超音波ホモジナイザー
BRANSON SONIFIER SFX250,550

40kHz超音波ホモジナイザー
BRANSON SONIFIER SFX150HH

主なアプリケーション
分散

カーボンナノチューブ 有機顔料 無機顔料 セラミック セメント 感光体 記録材料
磁性粉 粉末冶金 酸化鉄 金属酸化物 シリカ アルミナ カーボンブラック
ポリマー ラテックス 製紙 ファンデーション
研磨剤 電池 フィラー 光触媒 触媒 ワクチン 体外診断薬 歯磨き粉 シャンプー
半導体 電子基盤 液晶 貴金属 金属 宝石 タイヤ 発酵菌類 その他
乳化

エマルジョン製剤 農薬 トナー ラテックス 界面活性剤 クリーム 乳液 その他

日本国内販売総代理店
東京本社：〒136-0071 東京都江東区亀戸1-28-6 タニビル3F
技術物流センター：〒272-0146 千葉県市川市広尾2-1-9
大阪支店：〒533-0031 大阪府大阪市東淀川区西淡路1-1-36 新大阪ビル
福岡営業所：〒812-0016 福岡県福岡市博多区博多駅南1-2-15 事務機ビル
札幌出張所：〒001-0911 北海道札幌市北区新琴似11条13-7-13-2

https://www.cscjp.co.jp

TEL 03-5627-8150 FAX 03-5627-8151
TEL 047-701-6100 FAX 047-701-6116
TEL 06-6325-3171 FAX 03-6325-5180
TEL 092-482-4000 FAX 092-482-3797
TEL 011-764-3611 FAX 011-764-3612

http://www.dalton.co.jp
東京〒104-0045 東京都中央区築地5-6-10 浜離宮パークサイドプレイス
TEL 03-3549-6810 FAX 03-3549-6851

北海道
仙

台

名古屋

info@dalton.co.jp〒060-0808 北海道札幌市北区北八条西5-1 サイエンスビル
TEL 011-758-3131 FAX 011-758-3151

大〒980-0811 宮城県仙台市青葉区一番町4-6-1 仙台第一生命タワービル
TEL 022-217-7266 FAX 022-217-7261

中四国阪〒732-0824 広島県広島市南区的場町1-2-21 広島第一生命OSビルディング
TEL 082-568-4501 FAX 082-261-7170〒460-0002 愛知県名古屋市中区丸の内1-16-4 BPR プレイス名古屋丸の内
TEL 052-209-6631 FAX 052-209-6642

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TEL 092-411-2826 FAX 092-431-6580

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TEL 06-6268-8610 FAX 06-6268-8560

ナノ材料イメージング装置

HORIBA NanoRaman

AFM-Raman ＋ TERS・SNOM

NanoRaman 特長

アプリケーション例✔ ラマン光に干渉しない IR AFM ダイオード✔ TERS hyperspectral imaging✔ チップ交換時にヘッドの移動が不要

Topography✔ カンチレバーのオートアライメント✔ TERS 用 高 NA 対物レンズ（0.7 NA）

Nano-Raman

NanoRaman 用途✔ Gap mode TERS response of 1-D patterns✔ AFM/ ラマン同一領域測定
ラマン

25 nm indentation displacement

有機物、無機化合物、結晶性などの化学情報

15 nm indentation displacement

AFM

形状、電気・磁気的性質、機械特性、熱特性などの可視化✔ TERS（Tip Enhanced Raman Spectroscopy）分析▶ 回折限界を超える測定空間分解能(数十nm~) によるラマン測定測定例）金基板上カーボンナノチューブ・グラフェンの TERSHORIBA JOBIN YVON の分光技術は今年で創業200 周年を迎えました（a）AFMイメージ（b）TERSスペクトル株式会社 堀場製作所（c）TERSスペクトルイメージ

本社 〒601-8510京都市南区吉祥院宮の東町２番地

TEL （075）
313-8121 http://www.horiba.com/jp/scientific/

●東京
（03）
6206-4717 ●名古屋
（０５２）
９３６-5781 ●大阪（０６）
６３９０-８０１１ ●福岡（０９２）
292-3593

グラフェンの量産化に向けて…
Neutron▼概要▼
Roll-to-Roll (R2R)
ロール状に巻いた金属ホイルを、巻き取りな
がら連続的にグラフェンを成長可能な量産用装置◆特徴◆• 連続成長• 生産能力 20,000 m2 / year
• Cuホイル及びSteelホイルの両方に対応• 大気環境で成長可能で、真空チャンバ不要• 生産コストの大幅削減

CCS 2D & NOVO

BM300T▼概要▼
2D材料及びグラフェンの成長装置▼概要▼
ウェハ基板上CNT及びグラフェン
成長装置

◆特徴◆
• Closed Coupled Showerhead(CCS)
技術を適用• 成長温度は1400℃まで昇温可能• 基板に直接2D材料またはグラフェンを成長
可能• プラズマ機能装備• 多種原料を搭載可能(hBN, MoS2, WSe2)◆特徴◆• 12”及び8” wafer 自動搬送対応• プラズマ機能装備• High 2D/G > 2.5の高品質を達成

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Our technology. YOUR FUTURE

インテル® Parallel Studio XE は、 C/C++、 Fortran や Python* が使用された
ソフトウェアの計算処理の高速化を支援します。 近年、 増加を続けるプロセッサーの 全 てのコアや、 インテル® アドバンスト ・ ベクトル ・ エクステンション 512( インテル® AVX-512) を有効活用できる機能を提供します。

並列コードの構築
C/C++ と Fortran コードをインテル® コンパイラーでコンパイルし、 最適化されたバイナリーを生成します。
必要に応じて、 OpenMP* などのプログラミング手法や同梱 さ れるライブ ラリーを 適 用することで、 より高い
パフォーマンスを発揮させることが可能です。

インテル® C++/Fortran コンパイラー
・ 第 2 世代 インテル® Xeon® スケーラブル ・プロセッ
サーを含むインテル® プロセッサー向けの最適化
・ OpenMP* 4.5 と 5.0 (ドラフト仕様 ) による汎用的なスレッド並列と SIMD 並列のプログラミング

高速な Python* 実行環境
"インテル® Distribution for Python*"

パフォーマンス ・ ライブラリー
数値計算、 画像 / 信号処理、 並列化テンプレート、
データ解析

並列コードの解析
インテル® VTune™ Amplifier によるスレッド解析の結果。 アプリケーション TargetApp の処理時間の内訳で、 特に関数 myMatmul::matmul がSerial CPU Time (単一コアのみの実行時間) のほとんどを占めていた。

ソフトウェアの現状のパフォーマンスを分析し、 問題点を調べます。 （※） かかった処理時間について、 CPU 使用率、
FLOPS、 メモリー帯域幅といった様々なハードウェアの要
素と、 プロセス / スレッド、 関数 / ループ、 ソースコード行
といったソフトウェアの要素に分類および対応付けて把握することで、 高速化のために取り組むべき問題を明確にすることが可能です。

※ インテル® Parallel Studio XE Professional Edition または Cluster Edition でのみ利用可能
製品の詳細に関するお問い合わせ先 :製品詳細はこちらから

Tel: 03-5440-7875 Fax: 03-5440-7876 E-mail: intel@xlsoft.com
お問い合わせフォーム : www.xlsoft.com/jp/qa

www.xlsoft.com/intel/fntg

Intel、 インテル、 Intel ロゴ、 VTune、 Xeon は、 アメリカ合衆国および / またはその他の国における Intel Corporation の商標です。
インテル® ソフトウェア製品のパフォーマンス / 最適化に関する詳細は、 http://software.intel.com/en-us/articles/optimization-notice/#opt-jp を参照してください。
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