第第 51 回フラーレン・ナノチューブ・グラフェン
総合シンポジウム

回 フラーレン・ナノチューブ・グラフェン 総合シンポジウム講演要旨集

51

The 51st Fullerenes-Nanotubes-Graphene General Symposium

講演要旨集
Abstracts

２０１６年９月７日～９日

2016 年 9 月 7 日（水）～ 9 日（金）北海道立道民活動センター かでる 2・7
Hokkaido citizens actives center kaderu 2・7
主催

フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society

共催

日本化学会

The Chemical Society of Japan

協賛

日本物理学会
応用物理学会
高分子学会
電気化学会

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japanフロンティアカーボンのフラーレン製品
純度(HPLC面積％、代表値）
内容他

最低数量
（ｇ）
10
2
2
1
1

ST

99
99.5
99.5/ 昇華精製品
99.9/ 昇華精製品
99.9/昇華精製/単結晶品
97

フラーレン C70

SU

98/昇華精製品

0.5

nanom mix

ST

C60,C70, その他高次フラーレンの混合物

50

銘

分子構造

柄
ST
TL
SU
SUH
SC

nanom purple
フラーレン C60

nanom orange

混合フラーレン

nanom spectra[60]PCBM(phenyl C61-butyric acid methyl
ester)

E100

O

99

1

99.5

1

99.9

0.5

99/異性体トータル

0.5

O

E102
E110

(phenyl C71-butyric acid methyl
ester)

E112[70]PCBM※微粒化品（ ST-F）もあります

E100H

nanom spectraOO※位置異性体の混合物

主成分

99.5/異性体トータル※位置異性体の混合物

nanom spectra Q100
nanom spectra Q40 0

2[60]インデン２付加体

0.599/異性体トータル1※位置異性体の混合物

HO

nanom spectra D100

HO

C60OHn n=10を主成分とする混合物(n = ca.10)

1

H

nanom spectra A100

H

水素化フラーレン

n/2

0.5

99

[60]インデン付加体

水酸化フラーレン

1

n/2

C60Hn n=30を主成分とする混合物(n = ca. 30)※銘柄、取扱数量等は予告無く変更する場合がございます。 ※試験研究用途向けです。

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1

Abstract of
The 51 Fullerenes-Nanotubes-Graphene General SymposiumstSponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of Japan
Supported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan
Date: September 7th (Wed.) – 9th (Fri.), 2016

Place

: Hokkaido citizens actives center kaderu 2࣭7, Kita2, Nishi7,
Chuo-ku, Sapporo, Hokkaido, 060-0002, Japan

Presentation Time: Plenary Lecture (40 min presentation + 5 min discussion)Special Lecture (25 min presentation + 5 min discussion)
General Lecture (10 min presentation + 5 min discussion)
Poster Preview (1 min presentation without discussion)➨ 51 ᅇࣇ࣮࣭ࣛࣞࣥࢼࣀࢳ࣮ࣗࣈ࣭ࢢࣛࣇ࢙ࣥ⥲ྜࢩ࣏ࣥࢪ࣒࢘
ㅮ₇せ᪨㞟୺ദ㸸ࣇ࣮࣭ࣛࣞࣥࢼࣀࢳ࣮ࣗࣈ࣭ࢢࣛࣇ࢙ࣥᏛ఍
ඹദ㸸᪥ᮏ໬Ꮫ఍
༠㈶㸸᪥ᮏ≀⌮Ꮫ఍ࠊᛂ⏝≀⌮Ꮫ఍ࠊ㧗ศᏊᏛ఍ࠊ㟁Ẽ໬Ꮫ఍᪥᫬㸸ᖹᡂ  ᖺ  ᭶  ᪥㸦Ỉ㸧㹼 ᪥㸦㔠㸧ሙᡤ㸸໭ᾏ㐨❧㐨Ẹάືࢭࣥࢱ࣮࠿࡛ࡿ ࣭ࠛ໭ᾏ㐨ᮐᖠᕷ୰ኸ༊໭  ᮲す  ୎┠Ⓨ⾲᫬㛫㸸 ᇶㄪㅮ₇㸦Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ㸧≉ูㅮ₇㸦Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ㸧୍⯡ㅮ₇㸦Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ㸧࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸦Ⓨ⾲  ศ࣭㉁␲ᛂ⟅ ࡞ࡋ㸧        ᒎ♧ᅋయᚚⰾྡ 㸦஬༑㡢㡰ࠊᩗ⛠␎㸧㸦ᰴ㸧ࢩ࣮ࣥ࢟
㸦ᰴ㸧ᓥὠ〇సᡤ㸦ᰴ㸧ࢭࣥࢺࣛࣝ⛉Ꮫ㈠᫆
⏣୰㈗㔠ᒓᕤᴗ㸦ᰴ㸧㸦ᰴ㸧ࢽ࣮࣓ࣗࢱࣝࢫ࢚ࣥࢻࢣ࣑࢝ࣝࢫࢥ࣮࣏࣮ࣞࢩࣙࣥ
ࣁ࢖ࢯࣝ㸦ᰴ㸧㸦ᰴ㸧ᇼሙ࢚ࢫࢸࢵࢡ
ᰴ㸧ྡᇛࢼࣀ࣮࢝࣎ࣥ        ᗈ࿌ᥖ㍕ᅋయᚚⰾྡ 㸦஬༑㡢㡰ࠊᩗ⛠␎㸧㸦ᰴ㸧ụ⏣⌮໬ᰴ㸧ࢩࢫࢸ࣒ࣈࣞ࢖ࣥ
㸦ᰴ㸧ࢭࣥࢺࣛࣝ⛉Ꮫ㈠᫆
ࢯ࣮ࣛ࣎ࢪࣕࣃࣥ㸦ᰴ 㸦ᰴ㸧ᮾ㝧ࢸࢡࢽ࢝
ࢼࣀࣇ࢛ࢺࣥ㸦ᰴ㸧᪥ᮏࢮ࢜ࣥ㸦ᰴ㸧᪥ᮏ㟁Ꮚ㸦ᰴ㸧᪥❧ᕤᶵ㸦ᰴ㸧ࣅࢱ࣑ࣥ & ࣂ࢖࢜ࣜࢧ࣮ࢳ㸦ᰴ㸧ࣇࣟࣥࢸ࢕࢔࣮࢝࣎ࣥ㸦ᰴ㸧໭ᾏ㐨࢚࢔࣭࢛࣮࢘ࢱ࣮㸦ᰴ㸧໭ᾏ㐨࿴ග⣧⸆㸦ᰴ㸧㸦ᰴ㸧࣒ࢺ࢘Contents
Time Table ···································································· i
Chairperson ·································································· iii
Program Japanese ························································· iv
English ······················································ xviiii
Abstracts

Plenary Lecture & Special Lecture ··························1
General Lecture ················································ 9Poster Preview ··············································· 43

Author Index ······························································ 161┠ḟ᪩ぢ⾲ ········································································· iᗙ㛗୍ぴ ···································································· iii
ࣉࣟࢢ࣒ࣛ ࿴ᩥ ························································ iv
 ⱥᩥ ····················································· xviiii
ㅮ₇ண✏  ᇶㄪㅮ₇㸤≉ูㅮ₇ ···································· 1୍⯡ㅮ₇ ··················································· 9
࣏ࢫࢱ࣮Ⓨ⾲ ··········································· 43Ⓨ⾲⣴ᘬ ·································································· 161

ࣉࣟࢢ࣒ࣛ᪩ぢ⾲䠕᭶䠓᪥䚷䠄Ỉ䠅㻥㻦㻜㻜ཷ௜㛤ጞ㻌㻌㻌㻌㻥㻦㻜㻜㻌䡚㛤ሙ䚷㻌䚷㻌䚷㻌㻌㻥㻦㻟㻜㻌䡚ㅮ₇㛤ጞ䚷㻝㻜㻦㻜㻜㻌䡚㻝㻜㻦㻜㻜 ᇶㄪㅮ₇㻌㻔Ἑ㔝㻌῟୍㑻㻕㻝㻜㻦㻜㻜㻙㻝㻜㻦㻠㻡䠕᭶䠔᪥䚷䠄 ᮌ䠅

㻥㻦㻜㻜

㻝㻜㻦㻜㻜

ཷ௜㛤ጞ㻌㻌㻌㻌㻥㻦㻜㻜㻌䡚㛤ሙ䚷㻌䚷㻌䚷㻌㻌㻥㻦㻝㻡㻌䡚ㅮ₇㛤ጞ䚷㻌㻌㻥㻦㻠㻡㻌䡚
ᇶㄪㅮ₇㻌㻔㻶㼕㼚㻌㼆㼔㼍㼚㼓㻕㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜㻝㻝㻦㻜㻜㻔䝘䝜䝏䝳䞊䝤䛾≀ᛶ䞉䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇㻕䚷㻝㻜㻦㻟㻜㻙㻝㻝㻦㻝㻡䠕᭶䠕᪥䚷䠄㔠䠅

㻥㻦㻜㻜

㻝㻜㻦㻜㻜

୍⯡ㅮ₇䚷㻟௳୍⯡ㅮ₇䚷㻟௳㻝㻝㻦㻜㻜 㻔䝘䝜䝏䝳䞊䝤䛾≀ᛶ䞉䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻕䚷㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜

㻝㻞㻦㻜㻜

㻝㻟㻦㻜㻜

㻝㻠㻦㻜㻜

㻔䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䞉䜾䝷䝣䜵䞁⏕ᡂ䞉䜾䝷䝣䜵䞁䛾≀ᛶ㻕䚷㻝㻝㻦㻠㻡㻙㻝㻞㻦㻟㻜

᫨㣗
䠄ᖿ஦఍䠅
㻝㻞㻦㻟㻜㻙㻝㻟㻦㻠㻡≉ูㅮ₇㻌㻔ᐑ⏣㻌⪔඘㻕㻝㻟㻦㻠㻡㻙㻝㻠㻦㻝㻡୍⯡ㅮ₇䚷㻠௳

㻝㻞㻦㻜㻜

㻝㻢㻦㻜㻜

㻝㻠㻦㻜㻜

㻝㻤㻦㻜㻜

㻝㻥㻦㻜㻜

㻝㻞㻦㻜㻜

䠄䜾䝷䝣䜵䞁䛾≀ᛶ䠅㻝㻝㻦㻠㻡㻙㻝㻞㻦㻟㻜᫨㣗㻝㻞㻦㻟㻜㻙㻝㻟㻦㻠㻡
㻝㻟㻦㻜㻜

⥲఍
㻝㻠㻦㻜㻜㻙㻝㻠㻦㻟㻜≉ูㅮ₇㻌㻔㻰㼛㼚㻌㻲㼡㼠㼍㼎㼍㻕㻝㻠㻦㻟㻜㻙㻝㻡㻦㻜㻜୍⯡ㅮ₇䚷㻟௳

㻝㻠㻦㻜㻜

㻝㻡㻦㻜㻜

䝫䝇䝍䞊䝥䝺䝡䝳䞊䠄㻌㻟㻼㻙㻝㻌䡚㻌㻟㻼㻙㻟㻥㻌䠅㻝㻟㻦㻠㻡㻙㻝㻠㻦㻞㻡䝫䝇䝍䞊䝉䝑䝅䝵䞁㻔ᒎ♧䝩䞊䝹㻕
㻝㻠㻦㻞㻡㻙㻝㻢㻦㻜㻜㻔䜾䝷䝣䜵䞁䛾ᛂ⏝㻕㻌㻝㻡㻦㻜㻜㻙㻝㻡㻦㻠㻡㻝㻢㻦㻜㻜ఇ᠁䚷㻝㻡㻦㻠㻡㻙㻝㻢㻦㻜㻜୍⯡ㅮ₇䚷㻞௳㻝㻢㻦㻜㻜䠄䜾䝷䝣䜵䞁䛾≀ᛶ䞉䛭䛾௚䠅㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜㻔ཎᏊᒙ䞉䝘䝜䝩䞊䞁䞉䝘䝜䝽䜲䝲䞊㻕䚷㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻝㻣㻦㻜㻜ఇ᠁䚷㻝㻝㻦㻜㻜㻙㻝㻝㻦㻝㻡齋≉ูㅮ₇㻌㻔㰺⸨㻌┤ே㻕㻝㻝㻦㻝㻡㻙㻝㻝㻦㻠㻡୍⯡ㅮ₇䚷㻟௳

ⱝᡭዡບ㈹⾲ᙲᘧ㻌㻝㻟㻦㻠㻡㻙㻝㻠㻦㻜㻜㻝㻡㻦㻜㻜䝫䝇䝍䞊䝥䝺䝡䝳䞊䠄㻌㻝㻼㻙㻝㻌䡚㻌㻝㻼㻙㻠㻜㻌䠅㻝㻢㻦㻠㻡㻙㻝㻣㻦㻞㻡䝫䝇䝍䞊䝉䝑䝅䝵䞁㻔ᒎ♧䝩䞊䝹㻕
㻝㻣㻦㻞㻡㻙㻝㻥㻦㻜㻜䠄኱⃝㈹䞉㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇䠅㻌㻝㻝㻦㻟㻜㻙㻝㻞㻦㻟㻜㻝㻟㻦㻜㻜㻝㻠㻦㻝㻡㻙㻝㻡㻦㻝㻡ఇ᠁䚷㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜≉ูㅮ₇㻌㻔Ᏻ㣗༤ᚿ㻕㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜୍⯡ㅮ₇䚷㻟௳㻝㻝㻦㻜㻜᫨㣗㻝㻞㻦㻟㻜㻙㻝㻟㻦㻠㻡

㻔ཎᏊᒙ㻕

㻝㻡㻦㻜㻜

㻔䝘䝜䝏䝳䞊䝤䛾≀ᛶ䞉䜾䝷䝣䜵䞁䛾ᛂ⏝㻕䚷㻝㻜㻦㻝㻡㻙㻝㻝㻦㻜㻜ఇ᠁䚷㻝㻝㻦㻝㻡㻙㻝㻝㻦㻟㻜୍⯡ㅮ₇䚷㻟௳ఇ᠁䚷㻝㻝㻦㻟㻜㻙㻝㻝㻦㻠㻡୍⯡ㅮ₇䚷㻟௳ཷ௜㛤ጞ㻌㻌㻌㻌㻥㻦㻜㻜㻌䡚㛤ሙ䚷㻌䚷㻌䚷㻌㻌㻥㻦㻝㻡㻌䡚ㅮ₇㛤ጞ䚷㻌㻌㻥㻦㻠㻡㻌䡚≉ูㅮ₇㻌䠄ஂ㻌ⱥஅ䠅㻥㻦㻠㻡㻙㻝㻜㻦㻝㻡୍⯡ㅮ₇䚷㻟௳㻝㻣㻦㻜㻜䝫䝇䝍䞊䝥䝺䝡䝳䞊䠄㻌㻞㻼㻙㻝㻌䡚㻌㻞㻼㻙㻟㻥㻌䠅㻝㻢㻦㻟㻜㻙㻝㻣㻦㻝㻜䝫䝇䝍䞊䝉䝑䝅䝵䞁㻔ᒎ♧䝩䞊䝹㻕
㻝㻣㻦㻝㻜㻙㻝㻤㻦㻠㻡

㻝㻣㻦㻜㻜
㻝㻣㻦㻝㻡

≉ูㅮ₇㻌䠄ᒣ㉺㻌ⴥᏊ䠅㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜୍⯡ㅮ₇䚷㻟௳䠄ෆໟ䝘䝜䝏䝳䞊䝤䞉䝣䝷䞊䝺䞁䛾໬Ꮫ䞉䝣䝷䞊䝺䞁䠅㻌㻝㻢㻦㻟㻜㻙㻝㻣㻦㻝㻡

㻝㻤㻦㻜㻜

㻝㻤㻦㻠㻡
㻝㻥㻦㻜㻜

ᇶㄪㅮ₇䠖Ⓨ⾲㻠㻜ศ䠇㉁␲㻡ศ䛆㻞௳䛇᠓ぶ఍㻔䝩䝔䝹ᮐᖠ䜺䞊䝕䞁䝟䝺䝇䚸㻞㻲୹㡬㻕㻝㻥㻦㻜㻜㻙㻞㻝㻦㻜㻜≉ูㅮ₇䠖Ⓨ⾲㻞㻡ศ䠇㉁␲㻡ศ䛆㻢௳䛇㈹ᑐ㇟⪅ㅮ₇䠖Ⓨ⾲㻝㻜ศ䠇㉁␲㻝㻜ศ䛆㻟௳䛇୍⯡ㅮ₇䠖Ⓨ⾲㻝㻜ศ䠇㉁␲㻡ศ䛆㻟㻜௳䛇䝫䝇䝍䞊䝥䝺䝡䝳䞊䠖Ⓨ⾲㻝ศ䛆㻝㻝㻤௳䛇

㻞㻝㻦㻜㻜

i

Time table
September 7th (Wed)9:00

Registration begins at 9:00

September 8th (Thu)

9:00

KADERU Hall opens at 9:30
Lectures begins at 10:00

10:00

Plenary Lecture

11:00

nanotubes) 10:45-11:30

12:00

Properties of graphene) 11:45-12:30

14:00

14:00

19:00

General meeting
Special Lecture(Don. Futaba) 14:30-15:00

15:00(Properties of nanotubes䞉Applications ofgraphene) 10:15-11:00

11:00 Coffee Break 11:00-11:15
Special Lectures(Naoto Saito) 11:15-11:45

General Lectures [3]12:00(Properties of graphene)
11:45-12:30

Lunch
12:30-13:45

14:00

General Lectures [3]15:00

Poster Preview(3P-1 through 3P-39 )13:45-14:25
Poster Session(Exhibition Hall)
14:25-16:00(Applications of graphene)
15:00-15:45

16:00(Atomic layers䞉Nanohorns䞉
Nanowires) 16:00-16:45

18:00

General Lectures [3]

13:00

14:15-15:15

Poster Preview(1P-1 through 1P-40 )16:45-17:25
Poster Session(Exhibition Hall)
17:25-19:00

Special Lecture

14:00-14:30(Hiroshi Ajiki) 15:30-16:00

17:00(Lectures of Osawa Award and
Iijima Award Nominees)
11:30-12:30(Atomic layers)

General Lectures [3](Hideyuki Hisashi) 9:45-10:15

Award Ceremony 13:45-14:00

Coffee Break 15:15-15:30
Special Lecture
16:00(Properties of nanotubes䞉Formation andpurification of nanotubes) 10:30-11:15

13:00

General Lectures [4]
15:00

10:00

Lunch
12:30-13:45

Special Lecture(Yasumitsu M iyata) 13:45-14:15(Jin Zhang) 9:45-10:30

Coffee Break 11:15-11:30
General Lectures [3]Coffee Break 11:30-11:45
General Lectures [3]Lunch䠄Administrative meeting䠅
13:00
12:30-13:45

Registration begins at 9:00
KADERU Hall opens at 9:15
Lectures begins at 9:45

General Lectures [3]General Lectures [3]12:00 (Applications of nanotubes䞉Graphene sy nthesis䞉

9:00

Plenary Lecture
10:00(Junichiro Kono) 10:00-10:45

11:00 (Properties of nanotubes䞉applications ofRegistration begins at 9:00
KADERU Hall opens at 9:15
Lectures begins at 9:45

September 9th (Fri)Coffee Break 15:45-16:00
General Lectures [2]

16:00

17:00

Poster Preview(2P-1 through 2P-39 )16:30-17:10
Poster Session(Exhibition Hall)
17:10-18:45

Special Lecture(Yoko Yamakoshi) 16:00-16:30(Properties of graphene䞉Other topics) 16:00-16:30

General Lectures [3]
17:00
17:15

(Endohedral nanotubes䞉Chemistry offullerenes䞉Fullerenes) 16:30-17:15

18:00
18:45
19:00

Plenary Lecture:40 min + 5 min [2]Banquet2F, Tancho, Hotel Sapporo
Garden Palace
19:00-21:00

Special Lecture:25 min + 5 min [6]Aword Nominee Lecture:10 min + 10 min [3]General Lecture:10 min + 5 min [30]Poster Preview:1 min [118]

21:00

ii

ᗙ㛗୍ぴ (Chairpersons)᭶ ᪥ 㸦 Ỉ 㸧ࢭࢵࢩࣙࣥᇶㄪㅮ₇㸦Ἑ㔝῟୍㑻㸧୍⯡ㅮ₇ࠉ௳
୍⯡ㅮ₇ࠉ௳

᫬㛫
10:00 㹼 10:45
10:45 㹼 11:30
11:45 㹼 12:30

ᗙ㛗୸ᒣⱱኵ
ᯇ⏣୍ᡂ
኱㔝ࠉ㞝㧗≉ูㅮ₇㸦ᐑ⏣⪔඘㸧

13:45 㹼 14:15

㰻⸨⌮୍㑻

୍⯡ㅮ₇ࠉ௳

14:15 㹼 15:15

໭ᾆⰋ≉ูㅮ₇㸦Ᏻ㣗༤ᚿ㸧

15:30 㹼 16:00

ᩪ⸨᫴୍⯡ㅮ₇ࠉ௳

16:00 㹼 16:45

ಖ⏣ㅍ࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ

16:45 㹼 17:25

㔝ࠎཱྀᩫஅ኱⏫㑈᭶ ᪥ 㸦 ᮌ 㸧ࢭࢵࢩ୍ࣙࣥ⯡ㅮ₇ࠉ௳

᫬㛫
9:45 㹼 10:30
10:30 㹼 11:15

኱⃝㈹ཷ㈹ᑐ㇟⪅ㅮ₇

11:30 㹼 11:50

㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇

11:50 㹼 12:30≉ูㅮ₇㸦'RQ)XWDED㸧

14:30 㹼 15:00

㔝⏣ඃ୍⯡ㅮ₇ࠉ௳

15:00 㹼 15:45

ᐑᮏⰋஅ

୍⯡ㅮ₇ࠉ௳

16:00 㹼 16:30⛅⏣ᡂྖ

࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ

16:30 㹼 17:10

༡ᮏ኱✑

ᇶㄪㅮ₇㸦-LQ=KDQJ㸧ᗙ㛗∦ᾆᘯ㐨
ᐑෆ㞝ᖹ
୰ᔱ┤ᩄ

ⶇ⏣㝧ᖹ᭶ ᪥ 㸦 㔠 㸧ࢭࢵࢩࣙࣥ⠛ཎஂ඾

୍⯡ㅮ₇ࠉ௳

᫬㛫
9:45 㹼 10:15
10:15 㹼 11:00≉ูㅮ₇㸦㰺⸨┤ே㸧
齋

11:15 㹼 11:45‫⏣‮‬ᆏ㞞Ꮚ୍⯡ㅮ₇ࠉ௳

11:45 㹼 12:30

బ㔝ṇே

࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ

13:45 㹼 14:25

ᘪ๐ுኴ

ᇶㄪㅮ₇㸦ஂⱥஅ㸧

ᗙ㛗
ᒸ⏣᫴

ᑠᯘ៞ኴ
≉ูㅮ₇㸦ᒣ㉺ⴥᏊ㸧

16:00 㹼 16:30

๓⏣ඃ୍⯡ㅮ₇ࠉ௳

16:30 㹼 17:15

ᑠஂಖ◊iii

 ᭶  ᪥㸦Ỉ㸧ᇶㄪㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ
≉ูㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ୍⯡ㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸸Ⓨ⾲  ศࠊ㉁␲ᛂ⟅࡞ࡋ
ᇶㄪㅮ₇㸦㸧
1S-1

Wafer-Scale Monodomain Films of Spontaneously Aligned Single-Wall Carbon Nanotubes* Ἑ㔝 ῟୍㑻1୍⯡ㅮ₇㸦㸧ࢼࣀࢳ࣮ࣗࣈࡢ≀ᛶ࣭ࢼࣀࢳ࣮ࣗࣈࡢᛂ⏝
1-1෇೫ගࢆ⏝࠸ࡓ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈ࡜㑄⛣㔠ᒓ࢝ࣝࢥࢤࢼ࢖ࢻ≀㉁ࡢගᏛⓗᛶ㉁* 㰻⸨ ⌮୍㑻, బ⸨ ┤㐨, ㎮ᕭ ⏤ᶞ
1-2

1-3

9

༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢⓎග≉ᛶࡢไᚚ* ๓⏣ ඃ, Ṋሮ ♸ဢ, す㔝 ᮒ㡢, ༡ ❹, ᒣ⏣ 㐨ኵ, 㕥ᮌ ග᫂, Ọ℩ ⱱ

10Application of carbon nanotubes as electrodes and doping methods in photovoltaics* ⏣ ᪥, ୸ᒣ ⱱኵ, ᯇᑿ ㇏

11!!!!!!!ఇ᠁㸦㸧୍⯡ㅮ₇㸦㸧ࢼࣀࢳ࣮ࣗࣈࡢᛂ⏝࣭ࢢࣛࣇ࢙ࣥ⏕ᡂ࣭ࢢࣛࣇ࢙ࣥࡢ≀ᛶ
1-4
Mechanically durable and stretchable micro-supercapacitors with elastomeric components
harmonized with wearable field-effect transistors* Fumiaki Tanaka, Atsuko Sekiguchi, Karolina Laszczyk, Kazufumi Kobashi,
Shunsuke Sakurai, Don Futaba, Takeo Yamada, Kenji Hata
1-5

1-6

ᯫᶫࢢࣛࣇ࢙ࣥࢼࣀࣜ࣎ࣥࡢ࢙࢘ࣁࢫࢣ࣮ࣝ㞟✚໬ྜᡂ࡜ྜᡂᶵᵓ* 㕥ᮌ ᘯᮁ, 㔠Ꮚ ಇ㑻, ⃅⏣ 㟹, ኱㔝 ᐀୍, ๓ᕝ ౡẎ, ຍ⸨ ಇ㢧1213⁐ᾮ୰࡟⁻࠺ࢢࣛࣇ࢙ࣥࡢ┤᥋ほᐹᯇ㔝 ㇏, బ⸨ 㞝ဢ, బ⸨ ග, * బ㔝 ṇே

14!!!!!!!᫨㣗㸦㸧≉ูㅮ₇  
1S-2㠃ෆཎᏊᒙ࣊ࢸࣟᵓ㐀ࡢᡂ㛗࡜ホ౯* ᐑ⏣ ⪔඘2୍⯡ㅮ₇  ཎᏊᒙ
1-7
Visualization of structural modulation in the charge density wave phase of 1T-TaSe2 by
scanning transmission electron microscopy* ᑠᯘ ៞ኴ, ಖ⏣ ⱥὒ
1-8

୍㍈ṍࡳ༳ຍ࡟ࡼࡿ h-BN ࢼࣀࣜ࣎ࣥࡢᴟᛶኚㄪ
* ᒣ୰ ⥤㤶, ᒸ⏣ ᫴

iv

15

16

 ᭶  ᪥㸦Ỉ㸧
1-9

1-10

Germanium Sulfide Photodetectors with High Photosensitivity and Broad Spectral Response* Dezhi Tan, Xiaofan Wang, Yuhei Miyauchi, Kazunari Matsuda

17

Current jump and memory effect in MoS2 transistor operated at high temperature* Tomoki Yamanaka, Masahiro Matsunaga, Ayaka Higuchi, Yuichi Ochiai, Guanchen He,
Jonathan P. Bird, Nobuyuki Aoki

18!!!!!!!ఇ᠁㸦㸧≉ูㅮ₇㸦㸧
1S-3༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢගᏛ㑅ᢥ๎* Ᏻ㣗 ༤ᚿ

3୍⯡ㅮ₇㸦㸧ཎᏊᒙ࣭ࢼࣀ࣮࣭࣍ࣥࢼࣀ࣡࢖࣮ࣖ
1-11
Strain Modulation of Electronic Properties in Hexagonal Boron-Nitride Atomic Layers* Yoshitaka Fujimoto, Susumu Saito
1-12

1-13

19

࣮࢝࣎ࣥࢼࣀ࣮࣍ࣥ࡜ࢩࢡࣟࢹ࢟ࢫࢺࣜࣥࡢ࣍ࢫࢺ࣭ࢤࢫࢺ㘒యᙧᡂ* ཎ㔝 ᖾ἞, ᒣ⏣ ⣧ஓ, ⇃ᮏ ᫂ோ, ᰘ⏣ ┤ဢ, ୰ᮧ ᰤ୍20ࢥ࢖ࣝ┤ᚄ࡟ᑐࡍࡿ࣮࢝࣎ࣥࢼࣀࢥ࢖ࣝ᢬ᢠ⋡ࡢ౫Ꮡᛶ* 㡲⏣ ၿ⾜, ୰ᮧ ᗣྐ, 㣤⏣ Ẹኵ, 㔪㇂ 㐩, ⁪ᕝ ᾈྐ, ᳜ ோᚿ, ᓥ ᘯᖾ

21࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸦㸧࣏ࢫࢱ࣮ࢭࢵࢩࣙࣥ㸦㸧 ‫ⱝ ۼ‬ᡭዡບ㈹ೃ⿵
ࣇ࣮ࣛࣞࣥࡢ໬Ꮫ
1P-1Ỉ㓟໬ࣇ࣮ࣛࣞࣥಖㆤ㔠ࢼࣀ⢏Ꮚࡢㄪ〇* బ⸨ ᕼ, ᑠஂಖ ◊, Ḉ஭ ⱥ༤
1P-2ࢪ࢚ࢼ࣑ࣥ࡜ࣇ࣮ࣛࣞࣥࡢ୍㟁Ꮚ⛣ື࡜Ỉ⣲⛣ື཯ᛂ࡟ࡼࡿࣆࣟࣜࢪࣀࣇ࣮ࣛࣞࣥࡢ⏕ᡂ* ఀ⇃ ┤ᙪ, ᒣᮏ ᾈஅ, ᑠஂಖ ◊, ኱ᓥ ᕦࣇ࣮ࣛࣞࣥࡢᛂ⏝
1P-3⓶⭵ࡢග⪁໬࡟ᑐࡍࡿࣇ࣮ࣛࣞࣥࡢ᭷ຠᛶ* 㟷ᓥ ኸỤ, ఀ⸨ 㞞அ
1P-4

Nanoscale Water Droplet Confined in Fullerene Bilayer Vesicles* Sai Prakash Maddala, Tatsuya Homma, Ricardo Gorgoll, Koji Harano, Wasim Abuillan,
Alexandra Burk, Motomu Tanaka, Eiichi Nakamura

43

44

45

46

㔠ᒓෆໟࣇ࣮ࣛࣞࣥ
1P-5
Gd@C60(CF3)3 ࡢ ESR ᐃ* ᒣཱྀ ㈗ஂ, ୰ᕝ ⥤஀, ⠛ཎ ஂ඾, ྂᕝ ㈉, ຍ⸨ ❧ஂ47ࣇ࣮ࣛࣞࣥ
1P-6
㟁ሙୗ࡟࠾ࡅࡿ PCBM ࡢ㟁Ꮚ≀ᛶ* ྂ㇂ ໶, ᒸ⏣ ᫴

48v

 ᭶  ᪥㸦Ỉ㸧ࢼࣀࢳ࣮ࣗࣈࡢ≀ᛶ
1P-7➨୍ཎ⌮ DFT ィ⟬࡟ࡼࡿ࢝ࣝࢥࢤࣥෆໟ༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ㟁Ꮚ≧ែ* Yutaka Sato, Yosuke Kataoka, Eita Yokokura, Hironori Ogata
1P-8

1P-9

1P-10

㧗⣧ᗘ(6,5)༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ࣓࣮࣎ࣟࢱᛶ⬟ᯞ ῟Ꮚ, * ⶇ⏣ 㝧ᖹ, ᰗ ࿴ᏹ

50

Superconductivity in WS2 chiral nanotube* Feng Qin, Wu Shi, Toshiya Ideue, Masaro Yoshida, Alla Zak, Reshef Tenne,
Tomoka Kikitsu, Daishi Inoue, Daisuke Hashizume, Yoshihiro Iwasa

51

The structural contribution to the electrical character of super-growth SWCNT forest
through a height dependent study* Takayuki Watanabe, Hiroe Kimura, Shigeki Hano, Shunsuke Sakurai, Motoo Yumura,
Kenji Hata, Don Futaba

52ࢼࣀࢳ࣮ࣗࣈࡢᛂ⏝
1P-11 Development of Air-stable n-type Thermoelectric Materials wtih Benzimidazole
derivative-doped Single-walled Carbon Nanotubes* Yuki Nakashima, Tsuyohiko Fujigaya, Naotoshi Nakashima
1P-12

1P-13

1P-14

1P-15

1P-18

53

ග࡟ࡼࡿ໬Ꮫ⤖ྜᙧᡂࢆ⏝࠸ࡓከᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈ/࣏ࣜࢫࢳࣞࣥ」ྜᮦᩱࡢస〇* 㤿ሙ ᣅ㯞, 㧗⏣ ▱ဢ54ሷ࡟ㄏᑟࡉࢀࡿ༢ᒙ CNT ࡢ㹬ᆺࢻ࣮ࣆࣥࢢ࡟࠾ࡅࡿࣃ࢖ᣑᙇ࢔࣮ࣜࣝࢡࣛ࢘ࣥࡢᙺ๭* ụ⏣ ᬛ༤, 㔝ࠎཱྀ ᩫஅ, Ἑྜ ኋ

55

Improvement of Single-Walled Carbon Nanotube Cathodes for Perovskite Solar Cells* Takahiro Sakaguchi, Hayato Kobayashi, Hiroki Suko, Takeshi Okochi, Taiki Inoue,
Rong Xiang, Shohei Chiashi, Esko Kauppinen, Shigeo Maruyama56

⧞ࡾ㏉ࡋ▷᫬㛫↝ᡂ࡟ࡼࡿ㕲㓄఩❅⣲ࢻ࣮ࣉ⿕そᆶ┤㓄ྥ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈ㓟⣲㑏ඖ㟁ᴟゐ፹ࡢస〇* ෆᇼ ᥭ௓, ಖ⏣ ㅍ, ᮧ㉺ ᩗ57ࢼࣀࢳ࣮ࣗࣈࡢ⏕ᡂ࡜⢭〇
1P-16 SiC ࢼࣀࢳ࣮ࣗࣈෆࡢ᪂ወᵓ㐀ࢆ᭷ࡍࡿከᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ๰〇* ⏣ཱྀ ᐩႹ, ᒣᮏ ᫓ஓ, ኱ሙ ᘯ๎
1P-17

49

58

Purification of high purity semiconducting single-wall carbon nanotubes with a large
diameter of 1.9 nm by gel filtration* Boanerges Thendie, Haruka Omachi, Jun Hirotani, Yutaka Ohno, Ryo Kitaura,
Yasumitsu Miyata, Hisanori Shinohara59㧗┿✵ୗ࡛ࡢ࢔ࣝࢥ࣮ࣝ CVD ἲ࡟ࡼࡿ Ru ゐ፹࠿ࡽࡢ༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈᡂ㛗* ⸨஭ ㈗அ, ᱒ᯘ ᫍග, ᑠᕝ ᚁᝅ, ᡯ⏣ 㝯ᗈ, ᡂሯ 㔜ᘺ, ୸ᒣ 㝯ᾈ60vi ᭶  ᪥㸦Ỉ㸧
1P-19

Possible mechanism for selective separation of semiconducting single-walled carbon
nanotubes* ኱ᅬ ၨኴ, ฼ග ྐ⾜, ୰ᔱ ┤ᩄ61ෆໟࢼࣀࢳ࣮ࣗࣈ
1P-20 STM/STS studies on Europium nanowires encapsulated in carbon nanotubes* Terunobu Nakanishi, Ryo Kitaura, Shoji Yoshida, Osamu Takeuchi, Hidemi Shigekawa,
Hisanori Shinohara

62ࢢࣛࣇ࢙ࣥ⏕ᡂ
1P-21 2 ẁ㝵ࡢ↓ゐ፹࢔ࣝࢥ࣮ࣝ CVD ࡟ࡼࡿࢧࣇ࢓࢖࢔ᇶᯈୖ࡬ࡢࢢࣛࣇ࢙ࣥ┤᥋ᡂ㛗* ୖ⏣ ᝆ㈗, ᒣ⏣ ⣧ᖹ, ⸨ཎ ஽௓, ᒣᮏ ኱ᆅ, ୸ᒣ 㝯ᾈ, ᡂሯ 㔜ᘺ

63

1P-22

❅໬࣍࢘⣲ࢆࢸࣥࣉ࣮ࣞࢺ࡜ࡋࡓࢢࣛࣇ࢙ࣥࡢ CVD ᡂ㛗* ᑠᕝ ᓧ, ᑠᯘ భ, ┿ᗞ ㇏, ᐑ⏣ ⪔඘ࢢࣛࣇ࢙ࣥᛂ⏝
1P-23 Graphene FET of high photosensitivity using schottky diode between graphene and n-typesilicon* ᑠᯘ ྐṌ, Ᏻ㔝 ⿱㈗, ➉஭ 㑥ᬕ, ᭷Ụ 㝯அ, ⛅⏣ ᡂྖ
1P-24

1P-25

1P-26

1P-27

1P-28

1P-31

65

Catalytic properties of non-metal and platinum supported surface-modified nanocarbon
materials* ⥴᪉ ၨ඾, ྜྷ➉ ᬕᙪ, బ⸨ ㇏, すᮧ ᬛ᫂, ⋤ ᚿ᭸, ᳃ᮏ ಙ࿃, ᶫᮏ ె⏨,

㐲⸨ Ᏺಙ

66

ගᐃᅾἼࢆ⏝࠸ࡓࢢࣛࣇ࢙ࣥᶵᲔඹ᣺ࡢ㠀⥺ᙧไᚚ* ஭ୖ ኴ୍, Ᏻ㔝 ⿱㈗, ➉஭ 㑥ᬕ, ᭷Ụ 㝯அ, ⛅⏣ ᡂྖ67సື㟁ᅽ࡟ᛂࡌ࡚࢟ࣕࣃࢩࢱ࡜㟁ụ཮᪉ࡢᣲືࢆ♧ࡍ࣮࢜ࣝ㓟໬ࢢࣛࣇ࢙ࣥࢹࣂ࢖ࢫ* ⥴᪉ ┕Ꮚ, 㯮ᮌ ࡿࡾᏊ, ␊ᒣ ୍⩧, ㇂ཱྀ ㈗❶, 㩾἟ 㝣ኸ, ᯇᮏ Ὀ㐨

68

Suppression of Electrical Conductivity Deterioration of Cu Nanowire by Coating
2D-layered Materials* Nguyen Thanh Cuong, Susumu Okada

69㟁Ẽ໬Ꮫⓗ㓟໬㑏ඖࢧ࢖ࢡࣝ࡟ࡼࡗ࡚స〇ࡋࡓ㓟໬ࢢࣛࣇ࢓࢖ࢺ(GtO)㟁ᴟࡢ㟁Ẽ໬Ꮫ࢟ࣕࣃࢩࢱࣥࢫࡢホ౯* ⢖ᒇ ᜨ௓, ␊ᒣ ୍⩧, 㩾἟ 㝣ኸ, ᯇᮏ Ὀ㐨

70ࢢࣛࣇ࢙ࣥࡢ≀ᛶ
1P-29 ᾮ୰ࢢࣛࣇ࢙ࣥほᐹࢆྍ⬟࡟ࡍࡿ㢧ᚤ㙾ࡢࢥࣥࢺࣛࢫࢺᶵᵓ* బ⸨ ග, ᯇ㔝 ㇏, బ⸨ 㞝ဢ, బ㔝 ṇே
1P-30

64

71

㓟໬ࢢࣛࣇ࢙ࣥࡢ㔠ᒓᾐ㏱⌧㇟* 㩾἟ 㝣ኸ, ⥴᪉ ┕Ꮚ, ᯇᮏ Ὀ㐨

72

Enhanced terahertz-wave absorption in monolayer graphene via evanescent wave coupling* ཎ⏣ せ୍, M. Shoufie Ukhtary, Minjie Wang, Sanjay K. Srinivasan, Eddwi H. Hasdeo,
Ahmad R. T. Nugraha, Weilu Gao, 㓇஭ ⿱ྖ, 㰻⸨ ⌮୍㑻, Ἑ㔝 ῟୍㑻

73

vii

 ᭶  ᪥㸦Ỉ㸧ཎᏊᒙ
1P-32 Transverse Magnetic and Transverse Electric Surface Waves in Silicene* M. Shoufie Ukhtary, Ahmad R.T Nugraha, Eddwi H. Hasdeo, Riichiro Saito
1P-33

1P-34

1P-35

1P-36

74

polymethylglutarimide ࢆ⏝࠸ࡓⷧ⭷㌿෗* ᯇ๓ ㈗ྖ, 㡲㈡ ၏▱

75

Energetics and electronic structures of hexagonal GaN thin films and heterostructures* Yanlin Gao, Susumu Okada

76

WS2/MoS2 ࣊ࢸࣟᵓ㐀࡟࠾ࡅࡿ୍ḟඖ㛢ࡌ㎸ࡵ࣏ࢸࣥࢩࣕࣝࡢᙧᡂ
* ᑠᯘ భ, ྜྷ⏣ ᫛஧, Ḉ⏣ 㱟ྖ, 㧘ᓥ ೺ᝅ, ᒣᮏ ㈗༤, ᩧ⸨ ဴ㍤, ᑠ㘠 ဴ,㇂ཱྀ ᑦ, Ώ㑔 ㈼ྖ, ┿ᗞ ㇏, Ṋෆ ಟ, 㔜ᕝ ⚽ᐇ, ᐑ⏣ ⪔඘

77Fabrication and optical properties of vertical heterostructure of monolayer-WSe2/MoTe2* Takao Yamaoka, Lim En, Koirala Sandhaya, Yuhei Miyauchi, Kazunari Matsuda

78

ࢼࣀⅣ⣲⢏Ꮚ
1P-37 Ⅳ໬Ỉ⣲ࢿࢵࢺ࣮࣡ࢡࡢ㟁Ꮚ≧ែ࡜☢ᛶ* ཯⏫ ⣧ஓ, ᒸ⏣ ᫴

79

ࣂ࢖࢜
1P-38 ஧ᶵ⬟ᛶࢱࣥࣃࢡ㉁࡟ࡼࡿࢢࣛࣇ࢙ࣥ-TiO2 」ྜయࡢస〇* ᶫ㛫 ⿱㈗, ▼ᕝ Ὀ᫂, ୖ἟ ╬඾, ᒸᮏ ᑦᩥ, ᒣୗ ୍㑻, ᾆᒸ ⾜἞

80

ࡑࡢ௚
1P-39 ࢔ࢰ࣋ࣥࢮࣥᆺศᩓ๣ࢆ⏝࠸ࡓࢼࣀ࣮࢝࣎ࣥᮦᩱࡢศᩓไᚚ* ⚄ᚨ ၨ㑥, ᯇ⃝ ὒᏊ, ᮌཎ ⚽ඖ, ྜྷ⏣ ຾81ࢢࣛࣇ࢙ࣥ⏕ᡂ
1P-40 Effect of the flow regime on graphene growth
Ya-Ping Hsieh, * Ching-Hua Shih, Yi-Jing Chiu, Mario Hofmann

82

viii

 ᭶  ᪥㸦ᮌ㸧
ᇶㄪㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ
≉ูㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ኱⃝㈹࣭㣤ᓥ㈹ᑐ㇟⪅ㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ୍⯡ㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸸Ⓨ⾲  ศࠊ㉁␲ᛂ⟅࡞ࡋᇶㄪㅮ₇㸦㸧
2S-4

Growth of Single-Walled Carbon Nanotubes with Controlled Structure* Jin Zhang

4୍⯡ㅮ₇㸦㸧ࢼࣀࢳ࣮ࣗࣈࡢ≀ᛶ࣭ࢼࣀࢳ࣮ࣗࣈࡢ⏕ᡂ࡜⢭〇
2-1
BN ࢼࣀࢳ࣮ࣗࣈ࡬ࡢ୙⣧≀ࢻ࣮ࣉ* ᩪ⸨ ᫴, ⸨ᮏ ⩏㝯
2-2

2-3

22

Chirality selective synthesis of single-walled carbon nanotubes with sputtered Co-W
catalyst and its possible mechanism* Hua An, Rong Xiang, Hiroki Takezaki, Shinnosuke Ohyama, Yang Qian, Taiki Inoue,
Shohei Chiashi, Shigeo Maruyama

23

Development of new polymeric gels for the M/S separation of single-wall carbon nanotubes* Guowei Wang, Xiaojun Wei, Atsushi Hirano, Shunjiro Fujii, Takeshi Tanaka,
Hiromichi Kataura

24!!!!!!!ఇ᠁㸦㸧
኱⃝㈹ཷ㈹ᑐ㇟⪅ㅮ₇㸦㸧
2-4㔠ᒓෆໟࣇ࣮ࣛࣞࣥࡢⅣ⣲ࢣ࣮ࢪෆ㟁Ꮚࢫࣆࣥࢆ฼⏝ࡋࡓศᏊ఩⨨᳨▱* 㧗㔝 ຬኴ, ⏣ୗ ㄹ, 㕥ᮌ ග᫂, Ọ℩ ⱱ, ௒ᇼ ༤, ㉥㜰 ೺25

㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇㸦㸧
2-5

2-6

ࣇࣛࣅࣥࣔࣀࢾࢡࣞ࢜ࢳࢻࢆ⏝࠸ࡓࠊ༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢගᏛ␗ᛶయ⣧ᗘホ౯* 㨯 ᑠᆒ, ⶇ⏣ 㝧ᖹ, ᖹ㔝 ⠜, ⸨஭ ಇ἞㑻, ⏣୰ ୔ኈ, బ⸨ ┤㐨, 㰻⸨ ⌮୍㑻,

∦ᾆ ᘯ㐨

26

Low temperature growth of ultra-high mass density carbon nanotube forests on conductive
supports* ᮡ┠ ᜏᚿ, Santiago Esconjauregui, Lorenzo D'Arcié, John Robertson27!!!!!!!᫨㣗㸦㸧ⱝᡭዡບ㈹⾲ᙲᘧ㸦㸧
)17* Ꮫ఍⥲఍㸦 ≉ูㅮ₇㸦 
2S-5

Super-Growth CVD: Past, Present, and Future* Don Futabaix

5 ᭶  ᪥㸦ᮌ㸧୍⯡ㅮ₇㸦㸧ࢢࣛࣇ࢙ࣥࡢᛂ⏝
2-7
Hydrogenation properties of supported metal nanoparticles on graphene* Shigehito Isobe, Kengo Omori, Satoshi Yasuda
2-8

2-9

28

㔠ᒓࣇࢱࣟࢩ࢔ࢽࣥ/㑏ඖ㓟໬ࢢࣛࣇ࢙ࣥࣁ࢖ࣈࣜࢵࢻ㓟⣲㑏ඖゐ፹ࡢస〇* ᮧୖ ៅ୍, 㩾἟ 㝣ኸ, ᯇᮏ Ὀ㐨39㖡ᇙ㎸ᆺ࣮࢝࣎ࣥ㟁ᴟゐ፹࡟ࡼࡿ㓟⣲㑏ඖ* ຍ⸨ ඃ, Ṋ⸨ 㠭ె, ඵᮌ ୍୕30!!!!!!!ఇ᠁㸦㸧୍⯡ㅮ₇㸦㸧ࢢࣛࣇ࢙ࣥࡢ≀ᛶ࣭ࡑࡢ௚
2-10㓟໬ࢢࣛࣇ࢙ࣥࢆ⏝࠸ࡓ᪂つࣉࣟࢺࣥ/㟁Ꮚΰྜఏᑟయ* ␊ᒣ ୍⩧, 㩾἟ 㝣ኸ, ᮌ⏣ ᚭஓ, ㏿Ỉ ┿ஓ, ᯇᮏ Ὀ㐨
2-11㝧ᴟ㓟໬࡟ࡼࡿࢲ࢖ࣖࣔࣥࢻ㟁ゎ㉁⁐ᾮࢤ࣮ࢺ㟁⏺ຠᯝࢺࣛࣥࢪࢫࢱࡢࡋࡁ࠸್ࢩࣇࢺ* ✄ⴥ ඃᩥ, ஬༑ᔒ ᆂⅭ, ᴍᮧ ༟ᮁ, 㜿㒊 ಟᖹ, ᰘ⏣ ᑗᬸ, ᪂㇂ ᖾᘯ,ᖹᒾ ⠜, ᕝཎ⏣ ὒ

3132࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸦㸧࣏ࢫࢱ࣮ࢭࢵࢩࣙࣥ㸦㸧 ‫ⱝ ۼ‬ᡭዡບ㈹ೃ⿵
ࣇ࣮ࣛࣞࣥࡢ໬Ꮫ
2P-1✀ࠎࡢ⨨᥮ᇶࢆ᭷ࡍࡿࢺࣜ࢔ࢰ࣒ࣜ࢘ࣇ࣮ࣛࣞࣥࡢྜᡂ࡜⮬ᕫ㞟ྜᛶ* ᒸ⏣ ಇᙪ, ✄ሙ Ἃ⧊, ఀ⇃ ┤ᙪ, Ḉ஭ ⱥ༤
2P-2

Supramolecular Differentiation for Construction of Anisotropic C60 Nanostructures by
Time-Programmed Control of Interfacial Growth* Kosuke Minami, Partha Bairi, Jonathan P. Hill, Waka Nakanishi, Lok Kumar Shrestha,
Liu Chao, Koji Harano, Eiichi Nakamura, Katsuhiko Arigaࣇ࣮ࣛࣞࣥࡢᛂ⏝
2P-3ࣇ࣮ࣛࣞࣥ࢝ࢸࢥ࣮ࣝࡢ⮬ᕫ⤌⧊໬༢ศᏊ⭷ࢆ⏝࠸ࡓ㏫ᆺ᭷ᶵኴ㝧㟁ụ࡟࠾ࡅࡿࣇ
࢕ࣝࣇ࢓ࢡࢱࡢྥୖ* ⏣ ᪥, ᑠỮ ె♸, ୰ᕝ ㈗ᩥ, ᯇᑿ ㇏
2P-4

ᅛయ㹌㹋㹐ศගἲ࡟ࡼࡿࣂࣝࢡ࣊ࢸࣟ᥋ྜᆺ᭷ᶵⷧ⭷ኴ㝧㟁ụࡢᒁᡤᵓ㐀ゎᯒ* Ἑ㔝 ⣪ᕼ, ⥴᪉ ၨ඾㔠ᒓෆໟࣇ࣮ࣛࣞࣥ
2P-5
open C60 ୰ࡢ㓟⣲ศᏊࡢ୕㔜㡯≧ែ* ຍ⸨ ᱻ, ஧Ꮚ▼ ᖌ, ᮧ⏣ 㟹ḟ㑻, ຍ⸨ ❧ஂ

83

84

85

86

87

ࢼࣀࢳ࣮ࣗࣈࡢ≀ᛶ
2P-6࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈ࡜ⰾ㤶᪘࢔࣑ࣀ㓟ࡢ┦஫స⏝* ᖹ㔝 ⠜, ᒾୗ ࿴㍤, ⓑᮌ ㈼ኴ㑻, ᱜᗞ ಇ, ட⏣ ೔ྐ, ▼஭ ᲍ᜨᏊ,
88

⏣୰ ୔ኈ

x

 ᭶  ᪥㸦ᮌ㸧
2P-7

2P-8

2P-9

Synthesis of local phenylboronic acid-modified single-walled carbon nanotubes and its PL
behavior* Hisashi Onitsuka, Tomohiro Shiraki, Naotoshi Nakashima89஧◲໬ࣔࣜࣈࢹࣥࢼࣀࢳ࣮ࣗࣈࡢᵓ㐀࡜≀ᛶ* ኱ᓥ 㥴ኴ㑻, ㇏⏣ 㞞அ, ᩪ⸨ ᫴

90

Theory of optimized power factor of low-dimensional semiconductors and application tosemiconducting carbon nanotubes* ࢢ࢚ࣥ ࢱࣥ ࣇࣥ, ࢔ࣇ࣐ࢻ ࣜࢻ࣡ࣥ ࢺࣞࢫࢼ ࢾࢢࣛࣁ, 㰻⸨ ⌮୍㑻91ࢼࣀࢳ࣮ࣗࣈࡢᛂ⏝
2P-10 Effect of internal structure on the electrical performance of MWCNT-Cu wires* Rajyashree Sundaram, Atsuko Sekiguchi, Takeo Yamada, Kenji Hata
2P-11

2P-12

2P-13

2P-14

92

Measurement of photoinduced force acting on polystyrene microsphere by carbon nanotube
mechanical resonator* Ᏻ⏣ ṇ᫂, ➉஭ 㑥ᬕ, ᭷Ụ 㝯அ, ⛅⏣ ᡂྖ

93

Photothermoelectric properties of carbon nanotubes terahertz imagers and inspection
applications* 㕥ᮌ ኱ᆅ, ᑠ⏣ ಇ⌮, Ἑ㔝 ⾜㞝

94

Flexible heater and temperature sensor for temperature range higher than 100 °C using
multiwall carbon nanotube* Daiki Kobayashi, Kuniharu Takei, Takayuki Arie, Seiji Akita

95

Novel method to detect dopamine with high sensitivity based on adsorption onto carbon
nanotube surface* Takuya Ushiyama, Shigeru Kishimoto, Yutaka Ohno

96ࢼࣀࢳ࣮ࣗࣈࡢ⏕ᡂ࡜⢭〇
2P-15 㧗┿✵ୗ࡛ࡢ࢔ࣝࢥ࣮ࣝ CVD ἲ࡟ࡼࡿ Rh ゐ፹࠿ࡽࡢ༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈᡂ㛗* ୸ᒣ 㝯ᾈ, ᑠ⃝ 㢧ᡂ, ᡯ⏣ 㝯ᗈ, ᡂሯ 㔜ᘺ, 㣤Ἠ 㝧Ꮚ, ᒸᓮ ಇஓ,

2P-16

2P-17

2P-18

㣤ᓥ ⃈⏨

97

஧ඖ⣔ゐ፹ࡢࢥࣥࣅࢼࢺࣜ࢔ࣝ᥈⣴࡟ࡼࡿ༢ᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ࢝࢖ࣛࣜࢸ࢕㑅ᢥᡂ㛗* Ụᡞ ೔Ꮚ, ᮡ┠ ᜏᚿ, 㔝⏣ ඃ

98

Substrate design for high efficiency single walled carbon nanotube synthesis* ᯇᮏ ᑦஅ, ኱ᓥ ࠶ࡎࡉ, ▼ἑ బᬛᏊ, ␊ ㈼἞, ࣇࢱࣂ ࢻࣥ

99

Control of catalyst surface states towards synthesis of single chirality single-walled carbon
nanotubes using plasma CVD* Bin Xu, Toshiro Kaneko, Toshiaki Kato

100ෆໟࢼࣀࢳ࣮ࣗࣈ
2P-19 First-principles calculations of electronic states and solid state NMR parameters in alkali
halides encapsulated single-walled carbon nanotubes* ᶓ಴ ⍛ኴ, ∦ᒸ ὒྑ, ⥴᪉ ၨ඾

xi

101

 ᭶  ᪥㸦ᮌ㸧ࢢࣛࣇ࢙ࣥ⏕ᡂ
2P-20 ࣓࣑ࣛࣥ⵨Ẽࢆΰྜࡋࡓ࣓ࢱࣥࡢ CVD ࡟ࡼࡿ❅⣲ࢻ࣮ࣉከᒙࢢࣛࣇ࢙ࣥࡢᡂ㛗࡜࢟ࣕࣛࢡࢱࣜࢮ̿ࢩࣙࣥ
ྜྷ⏣ ㈗⿱, ᅵᒇ ᩥ, * ᆏᮾ ಇ἞
2P-21

Effect of crystallization of Ni catalyst on low-temperature direct-precipitation of multilayer
graphene* Jumpei Yamada, Yuki Ueda, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama,
Shigeya Naritsukaࢢࣛࣇ࢙ࣥࡢᛂ⏝
2P-22 ࢢࣛࣇ࢙ࣥᢸయ୰ࡢ㠀㔠ᒓඖ⣲ࢻ࣮ࣃࣥࢺࡀⓑ㔠ࡢᣑᩓ࡟୚࠼ࡿᙳ㡪* 㛗㇂ᕝ ▐, ᅜ㈆ 㞝἞, ᆏཱྀ ⣖ྐ
2P-23

2P-24

2P-25

2P-26

103

104

Electrochemical characteristics of enzyme/graphene electrodes* ୰ᕝ ඾㥴, ᱱ஭ ⓡᖹ, ᖹ㔝 ṇᾈ, 㯤 ᫴஧

105Electrochemical properties of CVD-grown monolayer graphene oxidized by UV/O3
treatment* ᱱ஭ ⓡᖹ, ୰ᕝ ඾㥴, 㯤 ᫴஧106⣽⳦ࡸ㓝ẕࡢቑṪ࡜⏕Ꮡ⋡࡟ཬࡰࡍࢢࣛࣇ࢙ࣥࡢຠᯝ* ⁁ῲ ᜤᖹ, ୰ᕝ ඾㥴, ᖹ㔝 ṇᾈ, 㜿㒊 ᩥᛌ, 㯤 ᫴஧

107

Edge-disorder effect on Id-Vg characteristics of GNR-FETs* 㧗ᓥ ೺ᝅ, ᒣᮏ ㈗༤

108ࢢࣛࣇ࢙ࣥࡢ≀ᛶ
2P-27 㔠ᒓࢼࣀ⢏Ꮚࡀ྾╔ࡋࡓࢢࣛࣇ࢙ࣥࡢ㟁ሙᛂ⟅* ᯇཎ ឡᕹ, ᒸ⏣ ᫴
2P-28

102

109

Probing interface strain in graphene and boron nitride in-plane heterostructures* Shintaro Yoshimura, Yu Kobayashi, Shun Ogawa, Shogo Sasaki, Yutaka Maniwa,
Yasumitsu Miyata

110ࢺ࣏ࣟࢪ࢝ࣝḞ㝗ࢆ᭷ࡍࡿࢢࣛࣇ࢙ࣥࡢศᴟ࡜☢ᛶ≧ែ* ୸ᒣ ᐇ㑣, ᒸ⏣ ᫴

111

ཎᏊᒙ
2P-30 㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖ࢻ࣊ࢸࣟᵓ㐀ࡢࣂ࣮ࣞศᴟ࣐ࢵࣆࣥࢢ* 㛗㇂ᕝ ຬ௓, ᯇ⏣ ୍ᡂ, ᐑෆ 㞝ᖹ, ẟ฼ ┿୍㑻

112

2P-29

2P-31

2P-32

2P-33

Photoluminescence properties of monolayer MoS2 FETs fabricated by dry-transfer process* ⋤ ᬡซ, ᐑෆ 㞝ᖹ, ᯇ⏣ ୍ᡂ113

༢ᒙ Mo1-xRexS2 ྜ㔠ࡢᡂ㛗࡜ホ౯* ᳃ ຾ᖹ, బࠎᮌ ᑗᝅ, ᑠᯘ భ, ๽ ᓽ, ྜྷ⏣ ᫛஧, ➉ෆ 㧗ᗈ, 㔜ᕝ ⚽ᐇ,ᮎỌ ࿴▱, ┿ᗞ ㇏, ᐑ⏣ ⪔඘114ᇶ┙࡜ࡢᖸ΅ຠᯝࢆྲྀࡾධࢀࡓ GaTe ࡢග྾཰࡜࣐ࣛࣥࢫ࣌ࢡࢺࣝ࡟࠾ࡅࡿ␗᪉ᛶ* ㎮ᕭ ⏤ᶞ, Shengxi Huang, Xi Ling, Huaihong Guo, Teng Yang, Mildred S. Dresselhaus,115㰻⸨ ⌮୍㑻

xii

 ᭶  ᪥㸦ᮌ㸧
2P-34

㟁⏺ຠᯝ࡟ࡼࡿ஧ᒙ MoS2 ࡢࣂࣥࢻࢠࣕࢵࣉኚㄪ* 㰺⸨ ဴ㍤, ᑠᯘ భ, Ώ㑔 ㈼ྖ, ㇂ཱྀ ᑦ, ┿ᗞ ㇏, ᐑ⏣ ⪔඘

116ࢼࣀ࣡࢖࣮ࣖ
2P-35 Growth of Diamond Nanocylinder Forest Using Template-Assisted Microwave Plasma
Chemical Vapor Deposition* Wenxi Fei, Masafumi Inaba, Yu Hirano, Hideki Masuda, Hiroshi Kawarada

117

ࢼࣀⅣ⣲⢏Ꮚ
2P-36 In situ synchrotron X-ray diffraction study of structural changes on neutron-irradiatedhighly oriented pyrolytic graphite under static high pressure and temperature* Tomohiko Hisakuni, Shin-ichi Honda, Masahito Niibe, Mititaka Terasawa,
Yuji Higo, Keisuke Niwase, Hirokazu Izumi, Eiji Taguchi, Tadao Iwata

118

ࣂ࢖࢜
2P-37 ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ࣐࢘ࢫ⤌⧊୰࢔ࢵࣉࢥࣥࣂ࣮ࢪࣙࣥⓎග࢖࣓࣮ࢪࣥࢢ
* ዟᖹ ᪩⣖, ‫⏣‮‬ᆏ 㞞Ꮚ, 㣤Ἠ 㝧Ꮚ, ᒸᓮ ಇஓ, ᯇ⏣ ୍ᡂ, ᐑෆ 㞝ᖹ

119

ࡑࡢ௚
2P-38 㧗ศᏊ࣐ࢺࣜࢵࢡࢫ୰࡟Ⅳ⣲⧄⥔ࢆᆶ┤㓄ྥ࣭㧗ᐦᗘ඘ሸࡋࡓ⇕⏺㠃ᮦᩱࡢ㛤Ⓨ* ᒣ⏣ ு, ᮡ┠ ᜏᚿ, ኱ἑ ฼⏨, 㔝⏣ ඃ120ࢢࣛࣇ࢙ࣥࡢᛂ⏝
2P-39 Ultrathin graphene-based solar cells
Ya-Ping Hsieh, * Chin-Fu Chen, Mario Hofmann121

᠓ぶ఍㸦㸧࣍ࢸࣝᮐᖠ࣮࢞ࢹࣥࣃࣞࢫ) ୹㡬xiii ᭶  ᪥㸦㔠㸧≉ูㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ୍⯡ㅮ₇㸸Ⓨ⾲  ศ㸩㉁␲ᛂ⟅  ศ࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸸Ⓨ⾲  ศࠊ㉁␲ᛂ⟅࡞ࡋ≉ูㅮ₇㸦㸧
3S-6࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢᏳ඲ᛶྥୖ᳨ウ㸫኱Ẽ୰࡟Ṥ࡝㣕ᩓࡋ࡞࠸ &17 ࡢ㛤Ⓨ㸫* ஂ ⱥஅ

6୍⯡ㅮ₇㸦㸧ࢼࣀࢳ࣮ࣗࣈࡢ≀ᛶࠊࢢࣛࣇ࢙ࣥࡢᛂ⏝
3-1
Optical Properties of Oxidized (6,5) Single-Wall Carbon Nanotubes* ኱ῡ ┿⌮, ᐑᮏ Ⰻஅ

3-2
3-3

33

⪏㓟ᛶࢆഛ࠼ࡓࢢࣛࣇ࢙ࣥ/㖟 SERS ᇶᯈ* 㕥ᮌ ㄔஓ, ྜྷᮧ 㞞‶

34

A nanoporous graphene terahertz detector* Juxian Li, Suzuki Daichi, Shunri Oda, Yoshikazu Ito, Fujita Takeshi, Yukio Kawano

35!!!!!!!ఇ᠁㸦㸧≉ูㅮ₇㸦㸧
3S-7࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢேᕤ㛵⠇࡬ࡢᛂ⏝࡜Ᏻ඲ᛶ* 㰻⸨ ┤ே7୍⯡ㅮ₇㸦㸧ࢢࣛࣇ࢙ࣥࡢ≀ᛶ
3-4໬Ꮫኚ᥮ࢢࣛࣇ࢙ࣥ-ࣆࣞࣥ㐃⤖⣔ࡢྜᡂ࡜ග≀ᛶ* ᱵᒣ ᭷࿴, ⓑ 㙟☒, ௒ᇼ ༤
3-5

3-6

36

Diazonium Chemistry for Tunable Grafting and Nanomanipulation
John Greenwood, Tomoko Inose, Yasuhiko Fujita, Oleksandr Ivasenko, Yoshito Tobe,
Steven De Feyter, * Hiroshi Uji-I

37ࢤ࣮ࢺไᚚᆺ➃㑅ᢥⓗග㓟໬࡟ࡼࡿࢢࣛࣇ࢙ࣥࢼࣀࣜ࣎ࣥᙧᡂ* 㔝ෆ ு, ᯇᮏ Ᏺᗈ, ụ⏣ ி୍㑻38!!!!!!!᫨㣗㸦㸧࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸦㸧࣏ࢫࢱ࣮ࢭࢵࢩࣙࣥ㸦㸧 ‫ⱝ ۼ‬ᡭዡບ㈹ೃ⿵
ࣇ࣮ࣛࣞࣥࡢ໬Ꮫ
3P-1
࣓ࢱࣀࣇ࣮ࣛࣞࣥㄏᑟయ[70]PCBM ࠾ࡼࡧࣅࢫ[70]PCBM ࡢ㧗㑅ᢥⓗྜᡂ* ఀ⸨ ㈗ᩄ, ஭ୖ ⿱ኴ, ᒾ⃝ ဴ㑻, ᯇඖ ῝, ᒾ஭ ฼அ, ᳃⬥ ࿴அ, 㧗ᑿ ඃᏊ,Ỉ㔝 ༟ᕭ, ኱㔝 ᩄಙ
3P-2

C61H2 ࠾ࡼࡧ C70 ࢆᣢࡘᅵᫍᆺ࢜ࣜࢦࢳ࢜ࣇ࢙࣐ࣥࢡࣟࢧ࢖ࢡࣝࡢᵓ㐀Ỵᐃ* ᒸ⏣ ὒྐ, ΎỈ ⚽ᖾ, 㟷ᰗ ᚸ, ࿘ ᙭, ఀ⯅⏣ ṇᙪ, ᯇᑿ ㇏



xiv

122

123

 ᭶  ᪥㸦㔠㸧ࣇ࣮ࣛࣞࣥࡢᛂ⏝
3P-3
Preparation of [C60]Fullerene Nanowhisker-Silver Nanoparticle Composites and Their
Catalytic Activity for Oxidation of Tetramethylbenzidine with Hydrogen Peroxide* Jeong Won Ko, Weon Bae Ko
3P-4

㔠ᒓ/㓟໬≀ከᒙ⭷ࢆ⏝࠸ࡓ༙㏱᫂᭷ᶵⷧ⭷ኴ㝧㟁ụࡢⰍไᚚ* ⸨஭ ಇ἞㑻, ∦ᾆ ᘯ㐨

124

125

㔠ᒓෆໟࣇ࣮ࣛࣞࣥ
3P-5
᪂つ Gd ෆໟࣇ࣮ࣛࣞࣥㄏᑟయࡢ༢㞳* ୰ᕝ ⥤஀, 㟷ᰗ ᚸࠊ኱⏫ 㑈ࠊ⋤ ᚿỌࠊ▼㔝 ຾┿ࠊ໭ᾆ Ⰻࠊ⠛ཎ ஂ඾126ࢼࣀࢳ࣮ࣗࣈࡢ≀ᛶ
3P-6㏱㐣㟁Ꮚ㢧ᚤ㙾ࡑࡢሙほᐹἲ࡟ࡼࡿከᒙ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ㏻㟁ຍ⇕୰ࡢᵓ㐀
࡜Ⓨග࡟㛵ࡍࡿ◊✲* すᕝ ⪔ྐ, Ᏻᆏ ᖾᖌ, ୰ཎ ோ, 㰻⸨ ᘺඵ

127

3P-7

3P-8

3P-9

㉸㡢Ἴศᩓᶵ PR-1 ࢆ⏝࠸ࡓ CNT ᩘ✀ࡢ⏬ᮇⓗศᩓ࡞ࡽࡧ࡟ホ౯ᡭἲ* 㧗ሯ 㝯அ

128

Pyrene dimer and monomer on single-walled carbon nanotubes* Jinseok Baek, Tomokazu Umeyama, Yuta Sato, Kazu Suenaga, Hiroshi Imahori129࣐ࢵࢺᵓ㐀ࢆ᭷ࡍࡿ CNT ⷧ⭷ࡢ㟁⏺ୗ࡛ࡢ㟁Ꮚ≀ᛶ* ྂᆅ ೺ே, ᒸ⏣ ᫴130ࢼࣀࢳ࣮ࣗࣈࡢᛂ⏝
3P-10 Voltage generation by movement of electrolyte solution on carbon nanotube thin film
* Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno
3P-11

3P-12

3P-13

3P-14

3P-15

131

Controlled n-type doping of carbon nanotube thin-film transistors with salt and crown ether* Fumiyuki Nihey, Kei Endo, Jiang Pu, Noriyuki Tonouchi, Fusako Sasaki, Yuki Kuwahara,
Takeshi Saito, Hiroyuki Endoh132

High-yield fabrication of n-type carbon nanotube thin-film transistors on flexible plastic
substrate* Fu-Wen Tan, Jun Hirotani, Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno

133

Response to pH of carbon nanotube thin-film transistors for sensor applications* Kana Hasegawa, Nguyen Viet, Takuya Ushiyama, Shigeru Kishimoto, Yutaka Ohno

134

1,1'-ࣅࢫ(ࢪࣇ࢙ࢽࣝ࣍ࢫࣇ࢕ࣀ)ࣇ࢙ࣟࢭࣥࢆෆໟࡋࡓ n ᆺ༢ᒙ࣮࢝࣎ࣥࢼࣀࢳࣗ
࣮ࣈࡢ⇕㟁≉ᛶ* 㣤ཎ ཭, 㔝ࠎཱྀ ᩫஅ, Ἑྜ ኋ

135

Gradual etching and long-length burning of metallic single-walled carbon nanotubes toward
semiconducting nanotube arrays* Taiki Inoue, Keigo Otsuka, Shohei Chiashi, Shigeo Maruyama

136

xv

9 ᭶ 9 ᪥㸦㔠㸧ࢼࣀࢳ࣮ࣗࣈࡢ⏕ᡂ࡜⢭〇
3P-16 Effect of 7,8-substituents of Flavin Derivatives on Selective Separation of Single-Walled
Carbon Nanotubes* すᮧ ຍዉᏊ, ฼ග ྐ⾜, ୰ᔱ ┤ᩄ
3P-17

3P-18

3P-19

Efficient growth and chirality control of single-walled carbon nanotubes by extended
alcohol catalytic chemical vapor deposition* Bo Hou, Cheng Wu, Yoko Iizumi, Takahiro Morimoto, Toshiya Okazaki, Taiki Inoue,
Shohei Chiashi, Rong Xiang, Shigeo Maruyama

137

138

Growth of Single-Walled Carbon Nanotubes from Solid-Phase Cobalt Carbide
Nanoparticles by Molecular Dynamics Simulations* ྜྷᕝ ு, 㬼㣫 ᾈ⾜, 㧗ᮌ ຬᾏ, Yann Magnin,༓㊊ ᪼ᖹ, Christophe Bichara,

୸ᒣ ⱱኵ

139

In-Plane TEM Imaging of Bimetallic Catalyst for SWNT Growth* Rong Xiang, Akihito Kumamoto, Hua An, Taiki Inoue, Shohei Chiashi, Yuichi Ikuhara,
Shigeo Maruyama

140ෆໟࢼࣀࢳ࣮ࣗࣈ
3P-20 ࣮࢝࣎ࣥࢼࣀࢳ࣮ࣗࣈࡢ㓟໬ศゎ཯ᛂ࡜ෆໟ≀㉁ࡢᢳฟ
* ᒣᓊ ⨾ಖ, ኱⏫ 㑈, ຍ⸨ 㞞ぶ, ໭ᾆ Ⰻ, ⠛ཎ ஂ඾141ࢢࣛࣇ࢙ࣥ⏕ᡂ
3P-21 Growth of Single-Crystal Bi-Layer Graphene Using Alcohol CVD* ᭮⏣ ᑗ᮶, Mohamed Atwa, ᯽ ᪸ኴ㑻, ୖ⏣ ┤ᑗ, 㝞 თ, ஭ࣀୖ Ὀ㍤, 㡯 ᴿ,
༓㊊ ᪼ᖹ, ୸ᒣ ⱱኵ

142

3P-22

ඛ㐍ࣉࣛࢬ࣐ CVD ࡟ࡼࡿࢢࣛࣇ࢙ࣥࢼࣀࣜ࣎ࣥྜᡂ࡟࠾ࡅࡿࢼࣀࣂ࣮ゐ፹✀ࡢຠᯝ* ࿴⸨ ຬኴ, 㕥ᮌ ᘯᮁ, 㔠Ꮚ ಇ㑻, ຍ⸨ ಇ㢧ࢢࣛࣇ࢙ࣥࡢᛂ⏝
3P-23 ➨୍ཎ⌮ィ⟬࡟ࡼࡿࠊ2 ḟඖࢩ࣮ࢺᮦᩱ࡟ࡼࡿ࣮ࣞࢨ࣮Ỉศゎࡢಁ㐍ࡢ◊✲ II* ᐑᮏ Ⰻஅ, Hong Zhang, Xinlu Cheng, Angel Rubio
3P-24

3P-25

3P-26

3P-27

3P-28

143

144

ࢤࣝࢡ࣐ࣟࢺࢢࣛࣇ࢕ࢆ⏝࠸ࡓࢢࣛࣇ࢙ࣥࡢࢧ࢖ࢬ࡟ࡼࡿศ㞳* ▼㯮 㥴୍, ➚ᒃ 㧗᫂, ୰Ᏻ ♸ኴ, ⏣ᮧ ┤㈗, ᮏ㛫 ᱁145㓟໬࢔࣑ࣥ࢝ࢵࣉࣜࣥࢢ཯ᛂ࡟࠾ࡅࡿ㓟໬ࢢࣛࣇ࢙ࣥゐ፹ࡢホ౯* ஭ᆏ ⌶ஓ, ⏣ᔱ ೺ኴ㑻, ᒣ⛉ ᬛ㈗, ኴ⏣ ㇏, 㧗஭ ࿴அ

146ࢼࣀࢢࣛࣇ࢙ࣥ࣍ࢫࢺ࡟ࡼࡿ NOx ྾╔ࡢ☢Ẽⓗホ౯すᔲ 㔛⨾, ᒣ⏣ ᮅኴ㑻, * 㧗஭ ࿴அ147㔠㟁ᴟୖࡢࢢࣛࣇ࢙ࣥ࡬ࡢ㟁Ẽ໬ᏛⓗศᏊಟ㣭* ୹㔝 㥴, బ⸨ ♸㍜, ⇃㇂ ㄹኴ, ୰ᓥ ᾈྖ, ຍ⸨ ඃ, ಖ⏣ ㅍ, ᮧ㉺ ᩗ,

ඵᮌ ୍୕

148

Fabrication of Graphene Composite Plasmon-Active Photoelectrode* Ᏻ⏣ ೺௓, ༡ᮏ ኱✑, ࿘ ╻㢼, ಖ⏣ ㅍ, ᮧ㉺ ᩗ

149

xvi

9 ᭶ 9 ᪥㸦㔠㸧ࢢࣛࣇ࢙ࣥࡢ≀ᛶ
3P-29 ᫬㛫ศゎග㟁Ꮚศගἲ࡟ࡼࡿࢢࣛࣇ࢙ࣥ/SiC(000-1)ࡢ㉸㧗㏿࢟ࣕࣜ࢔ࢲ࢖ࢼ࣑ࢡࢫࡢ┤᥋ほ* ᰁ㇂ 㝯ྐ, ྿␃ ༤୍, Ώ㑔 ᾈ, ᒣᮏ ㈗ኈ, ᒸ⏣ ኱, 㕥ᮌ ༤ே, ᑠᕝ ඃ,㣤┒ ᣅႹ, ▼஭ 㡰ஂ, 㔠஭ ㍤ே, ⏣ᓥ ᆂ୍㑻, Baojie Feng, ᒣᮏ 㐩, ᯈ㇂ ἞㑻,ᑠ᳃ ᩥኵ, ᒸᓮ ᾈ୕, ㎞ ᇰ, ᯇ⏣ ᕑ
3P-30

3P-31

໬Ꮫಟ㣭࡟ࡼࡿࢢࣛࣇ࢙ࣥ➃ࡢ௙஦㛵ᩘኚㄪ* ᖹ 㯇ᐇ, ᒣ୰ ⥤㤶, ᒸ⏣ ᫴

151Charge/Covalent Interactions at the Interface between Graphene and Electrolyte* 㕥ᮌ ኱㍜, 㧗஭ ࿴அ

152

ཎᏊᒙ
3P-32 ༢ᒙ Nb ࢻ࣮ࣉ WS2 ࡢᡂ㛗࡜ගᏛⓗᛶ㉁* బࠎᮌ ᑗᝅ, ᑠᯘ భ, ๽ ᓽ, ᮎỌ ࿴▱, ┿ᗞ ㇏, ᐑෆ 㞝ᖹ, ᐑ⏣ ⪔඘
3P-33

3P-34

3P-35

150

153

㧗㞟✚ WS2 ࢔ࣞ࢖ࡢᒙᩘไᚚྜᡂ* ᮤ ㉸, 㔠Ꮚ ಇ㑻, ຍ⸨ ಇ㢧

154

Polarization-resolved photoluminescence spectroscopy on monolayer transition metal
dichalcogenides under electrostatic gating* Wenjin Zhang, Yusuke Hasegawa, Shinichiro Mouri, Kazunari Matsuda, Yuhei Miyauchi

155

Electron beam lithography induced strain in MoS2 crystal* ᯇỌ ṇᗈ, ᵽཱྀ ⤢㤶, He Guanchen, ᒣ⏣ ဴྐ, Krüger Peter, Bird Jonathan,ⴠྜ ຬ୍, 㟷ᮌ ఙஅ

156ࢼࣀ࣮࣍ࣥ
3P-36 Optimization of Preparation Conditions for Fibrous Aggregates of Single-Walled Carbon
Nanohorns* Ryota Yuge, Fumiyuki Nihey, Kiyohiko Toyama, Masako Yudasaka

157

ࡑࡢ௚
3P-37 WS2 ࢼࣀࢳ࣮ࣗࣈࢿࢵࢺ࣮࣡ࢡ࡟࠾ࡅࡿ୧ᴟᛶࢺࣛࣥࢪࢫࢱ
* Ⳣཎ ගᡂ, Ἑྜ ⱥ㍤, ⶇ⏣ 㝧ᖹ, ┿ᗞ ㇏, ᒸ⏣ ᫴, ᰗ ࿴ᏹ

158

3P-38

3P-39

Self-assembled nanofibers of fluorinated bisanthene derivatives* Hironobu Hayashi, Hiroko Yamada

159

Synthesis of Sulfur-doped Graphene Oxides* Haruka Omachi, Zois Syrgiannis, Yasuhiro Kinno, Maurizio Prato, Hisanori Shinohara

160≉ูㅮ₇㸦㸧
3S-8ࣇ࣮ࣛࣞࣥ(C60, M3N@C80)ࡢ་⸆ရᛂ⏝ࡢࡓࡵࡢㄏᑟయ໬* ᒣ㉺ ⴥᏊ

8୍⯡ㅮ₇㸦㸧ෆໟࢼࣀࢳ࣮ࣗࣈ࣭ࣇ࣮ࣛࣞࣥࡢ໬Ꮫ࣭ࣇ࣮ࣛࣞࣥ
3-7
Doping of porous nanostructures* ሷ⃝ ⚽ḟxvii

39

9 ᭶ 9 ᪥㸦㔠㸧
3-8

3-9

ࣇ࣮ࣛࣞࣥ࢝ࢳ࢜ࣥ୰㛫యࢆά⏝ࡍࡿࣇ࣮ࣛࣞࣥࡢಟ㣭㸸㌿⛣཯ᛂ࡜⎔໬཯ᛂ* ᯇᑿ ㇏

40

A15-structured Cs3C60 : the first non-cubic A3C60 fulleride*㧗ᯘ ᗣ⿱, Ruth H. Zadik, Kosmas Prassides
41

xviii

September 7th, Wed.
Plenary Lecture: 40 min (Presentation) + 5 min (Discussion)Special Lecture: 25 min (Presentation) + 5 min (Discussion)
General Lecture: 10 min (Presentation) + 5 min (Discussion)
Poster Preview: 1 min (Presentation)
Plenary Lecture ( 10:00-10:45 )1S-1

Wafer-Scale Monodomain Films of Spontaneously Aligned Single-Wall Carbon Nanotubes* Junichiro Kono

1

General Lecture ( 10:45-11:30 )Properties of nanotubes࣭Applications of nanotubes
1-1
Optical Property of Carbon Nanotubes and Low Dimensional Atomic layer materials byusing Circular Polarized light* Riichiro Saito, Naomichi Sato, Yuki Tatsumi
1-2

1-3

9

Control of photoluminescence properties of single-walled carbon nanotubes* Yutaka Maeda, Yuya Takehana, Akane Nishino, Shun Minami, Michio Yamada,
Mitsuaki Suzuki, Shigeru Nagase

10

Application of carbon nanotubes as electrodes and doping methods in photovoltaics* Il Jeon, Shigeo Maruyama, Yutaka Matsuo

11>>>>>>> Coffee Break ( 11:30-11:45 ) <<<<<<<
General Lecture ( 11:45-12:30 )Applications of nanotubes࣭Graphene synthesis࣭Properties of graphene
1-4
Mechanically durable and stretchable micro-supercapacitors with elastomeric components
harmonized with wearable field-effect transistors* Fumiaki Tanaka, Atsuko Sekiguchi, Karolina Laszczyk, Kazufumi Kobashi,
Shunsuke Sakurai, Don Futaba, Takeo Yamada, Kenji Hata
1-5

1-6

12

Wafer-scale integration of suspended graphene nanoribbons and its growth mechanisms* Hiroo Suzuki, Toshiro Kaneko, Yasushi Shibuta, Munekazu Ohno, Yuki Maekawa,Toshiaki Kato

13

Direct observations of graphene and its oxide dispersed in solution
Yutaka Matsuno, Yu-uya Sato, Hikaru Sato, * Masahito Sano

14>>>>>>> Lunch Time ( 12:30-13:45 ) <<<<<<<
Special Lecture ( 13:45-14:15 )1S-2

Growth and characterization of in-plane atomic layer heterostructures* Yasumitsu Miyata

2

General Lecture ( 14:15-15:15 )Atomic layers
1-7
Visualization of structural modulation in the charge density wave phase of 1T-TaSe2 by
scanning transmission electron microscopy* Keita Kobayashi, Hidehiro Yasuda
1-8

Polarity control of h-BN nanoribbons by uniaxial strain* Ayaka Yamanaka, Susumu Okada

xix

15

16

September 7th, Wed.
1-9

1-10

Germanium Sulfide Photodetectors with High Photosensitivity and Broad Spectral Response* Dezhi Tan, Xiaofan Wang, Yuhei Miyauchi, Kazunari Matsuda

17

Current jump and memory effect in MoS2 transistor operated at high temperature* Tomoki Yamanaka, Masahiro Matsunaga, Ayaka Higuchi, Yuichi Ochiai, Guanchen He,
Jonathan P. Bird, Nobuyuki Aoki

18>>>>>>> Coffee Break ( 15:15-15:30 ) <<<<<<<
Special Lecture ( 15:30-16:00 )1S-3

Selection rules of optical excitations for single-walled carbon nanotubes* Hiroshi Ajiki

3

General Lecture ( 16:00-16:45 )Atomic layers࣭Nanohorns࣭Nanowires
1-11
Strain Modulation of Electronic Properties in Hexagonal Boron-Nitride Atomic Layers* Yoshitaka Fujimoto, Susumu Saito
1-12

1-13

Host-Guest Complexation of Cyclodextrins on Carbon Nanohorn Particles* Koji Harano, Junya Yamada, Akihito Kumamoto, Naoya Shibata, Eiichi Nakamura

20

Dependence of the resistivity of carbon nanocoils on coil diameter* Yoshiyuki Suda, Yasushi Nakamura, Tamio Iida, Toru Harigai, Hirofumi Takikawa,
Hitoshi Ue, Hiroyuki Shima

21

Poster Preview ( 16:45-17:25 )Poster Session ( 17:25-19:00 )(‫ )ۼ‬Candidates for the Young Scientist Poster Award

Chemistry of fullerenes
1P-1
Preparation of gold nanoparticles stabilized by water-soluble fullerenol C60(OH)36* Nozomi Sato, Ken Kokubo, Hidehiro Sakurai
1P-2

Thermal single electron transfer between C60 and dienamines leading topyrrolidinofullerenes via hydrogen shift of radical intermediates* Naohiko Ikuma, Hiroyuki Yamamoto, Ken Kokubo, Takumi Oshima

Applications of fullerenes
1P-3
Availability of fullerene for skin photo-aging; Anti-inflammatory and suppression ofcarboxylated protein generation.
* Hisae Aoshima, Masayuki Ito
1P-4

19

Nanoscale Water Droplet Confined in Fullerene Bilayer Vesicles* Sai Prakash Maddala, Tatsuya Homma, Ricardo Gorgoll, Koji Harano, Wasim Abuillan,
Alexandra Burk, Motomu Tanaka, Eiichi Nakamura

43

44

45

46

Endohedral metallofullerenes
1P-5
ESR measurements of Gd@C60(CF3)3* Takahisa Yamaguchi, Ayano Nakagawa, Hisanori Shinohara, Ko Furukawa,
Tatsuhisa Kato

47

Fullerenes
1P-6
Electronic properties of PCBM under an external electric field* Sho Furutani, Susumu Okada

48

xx

September 7th, Wed.
Properties of nanotubes
1P-7
Electronic states of chalcogen encapsulated in single-walled carbon nanotubes studied byFirst-Principles DFT Calculations* Yutaka Sato, Yosuke Kataoka, Eita Yokokura, Hironori Ogata
1P-8

1P-9

1P-10

Bolometric performance of highly purified (6,5) Single Walled Carbon Nanotubes
Junko Eda, * Yohei Yomogida, Kazuhiro Yanagi

50

Superconductivity in WS2 chiral nanotube* Feng Qin, Wu Shi, Toshiya Ideue, Masaro Yoshida, Alla Zak, Reshef Tenne, Tomoka
Kikitsu, Daishi Inoue, Daisuke Hashizume, Yoshihiro Iwasa

51

The structural contribution to the electrical character of super-growth SWCNT forest
through a height dependent study* Takayuki Watanabe, Hiroe Kimura, Shigeki Hano, Shunsuke Sakurai, Motoo Yumura,
Kenji Hata, Don Futaba

52

Applications of nanotubes
1P-11 Development of Air-stable n-type Thermoelectric Materials wtih Benzimidazole
derivative-doped Single-walled Carbon Nanotubes* Yuki Nakashima, Tsuyohiko Fujigaya, Naotoshi Nakashima
1P-12

1P-13

1P-14

1P-15

1P-18

53

Fabrication of Multi-walled Carbon Nanotube / Polystyrene Compound Materials throughPhoto-induced Chemical Bond Formation* Takuma Baba, Tomoya Takada

54

Role of ʌ-extended Aryl Crown Ethers in the Salt-induced Chemical n-type Doping ofSingle-walled Carbon Nanotubes* Tomohiro Ikeda, Yoshiyuki Nonoguchi, Tsuyoshi Kawai

55

Improvement of Single-Walled Carbon Nanotube Cathodes for Perovskite Solar Cells* Takahiro Sakaguchi, Hayato Kobayashi, Hiroki Suko, Takeshi Okochi, Taiki Inoue,
Rong Xiang, Shohei Chiashi, Esko Kauppinen, Shigeo Maruyama

56

Iron-Nitrogen-Doped Vertically Aligned Carbon Nanotube Electrocatalyst Synthesized
through Instantaneous and Repetitive Pyrolysis for Oxygen Reduction Reaction* Yosuke Uchibori, Satoshi Yasuda, Kei Murakoshi

57

Formation and purification of nanotubes
1P-16 Synthesis of new-structured multi-walled carbon nanotubes inside silicon carbide nanotubes* Tomitsugu Taguchi, Shunya Yamamoto, Hironori Ohba
1P-17

49

58

Purification of high purity semiconducting single-wall carbon nanotubes with a large
diameter of 1.9 nm by gel filtration* Boanerges Thendie, Haruka Omachi, Jun Hirotani, Yutaka Ohno, Ryo Kitaura, Yasumitsu
Miyata, Hisanori Shinohara

59

Single-walled carbon nanotube synthesis using Ru catalysts by alcohol catalytic chemical
vapor deposition in high vacuum* Takayuki Fujii, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida,
Shigeya Naritsuka, Takahiro Maruyama

60

xxi

September 7th, Wed.
1P-19

Possible mechanism for selective separation of semiconducting single-walled carbon
nanotubes* Keita Ozono, Fumiyuki Toshimitsu, Naotoshi Nakashima

61

Endohedral nanotubes
1P-20 STM/STS studies on Europium nanowires encapsulated in carbon nanotubes* Terunobu Nakanishi, Ryo Kitaura, Shoji Yoshida, Osamu Takeuchi, Hidemi Shigekawa,
Hisanori Shinohara

62

Graphene synthesis
1P-21 Two-step growth of graphene directly grown on sapphire substrate by non-catalytic alcohol
CVD* Yuki Ueda, Jumpei Yamada, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama,
Shigeya Naritsuka

63

1P-22

CVD growth of graphene using boron nitride as growth templates* Shun Ogawa, Yu Kobayashi, Yutaka Maniwa, Yasumitsu Miyata

Applications of graphene
1P-23 Graphene FET of high photosensitivity using schottky diode between graphene and n-typesilicon* Shiho Kobayashi, Yuki Anno, Kuniharu Takei, Takayuki Arie, Seiji Akita
1P-24

1P-25

1P-26

1P-27

1P-28

65

Catalytic properties of non-metal and platinum supported surface-modified nanocarbon
materials* Hironori Ogata, Haruhiko Yoshitake, Yutaka Sato, Tomoaki Nishimura, Zhipeng Wang,
Shingo Morimoto, Yoshio Hashimoto, Morinobu Endo

66

Control of nonlinearity of suspended graphene resonator by standing of light* Taichi Inoue, Yuki Anno, Kuniharu Takei, Takayuki Arie, Seiji Akita

67

All-graphene oxide device with tunable supercapacitor and battery behaviour by theworking voltage* Chikako Ogata, Ruriko Kurogi, Kazuto Hatakeyama, Takaaki Taniguchi,
Michio Koinuma, Yasumichi Matsumoto68

Suppression of Electrical Conductivity Deterioration of Cu Nanowire by Coating
2D-layered Materials* Nguyen Thanh Cuong, Susumu Okada

69

Evaluation of the electrochemical capacitance of graphite oxide electrode prepared by theelectrochemical oxidation/reduction cycle* Keisuke Awaya, Kazuto Hatakeyama, Michio Koinuma, Yasumichi Matsumoto

70

Properties of graphene
1P-29 Contrast mechanisms of the fluorescence microscopy that allows direct observations of
nanocarbons in solution* Hikaru Sato, Yutaka Matsuno, Yu-uya Sato, Masahito Sano
1P-30

64

Metal Permeation into Multi-layered Graphene Oxide Film
* Michio Koinuma, Chikako Ogata, Yasumichi Matsumoto

xxii

71

72

September 7th, Wed.
1P-31

Enhanced terahertz-wave absorption in monolayer graphene via evanescent wave coupling* Yoichi Harada, M. Shoufie Ukhtary, Minjie Wang, Sanjay K. Srinivasan,
Eddwi H. Hasdeo, Ahmad R. T. Nugraha, Weilu Gao, Yuji Sakai, Riichiro Saito,
Junichiro Kono

Atomic layers
1P-32 Transverse Magnetic and Transverse Electric Surface Waves in Silicene* M. Shoufie Ukhtary, Ahmad R.T Nugraha, Eddwi H. Hasdeo, Riichiro Saito
1P-33

1P-34

1P-35

1P-36

74

A Scalable Clean Transfer Process with Polymethylglutarimide* Takashi Matsumae, Tadatomo Suga

75

Energetics and electronic structures of hexagonal GaN thin films and heterostructures* Yanlin Gao, Susumu Okada

76

Formation of 1D confining potential in MoS2/WS2-based heterostructures* Yu Kobayashi, Shoji Yoshida, Ryuji Sakurada, Kengo Takashima, Takahiro Yamamoto,Tetsuki Saito, Satoru Konabe, Takashi Taniguchi, Kenji Watanabe, Yutaka Maniwa,
samu Takeuchi,Hidemi Shigekawa, Yasumitsu Miyata

77

Fabrication and optical properties of vertical heterostructure of monolayer-WSe2/MoTe2* Takao Yamaoka, Lim En, Koirala Sandhaya, Yuhei Miyauchi, Kazunari Matsuda

78

Carbon nanoparticles
1P-37 Electronic and magnetic properties of porous hydrocarbon networks* Jun-ya Sorimachi, Susumu Okada
Bio
1P-38

73

Construction of graphene – TiO2 hybrid nano-material using bifunctional protein
supramolecule* Yuki Hashima, Yasuaki Ishikawa, Mutsunori Uenuma, Naofumi Okamoto,
Ichiro Yamashita, Yukiharu Uraoka

79

80

Other topics
1P-39 Rapid and Reversible Dispersibility Tuning of Carbon Nanomaterials by the
Photoisomerisation of an Azobenzene-derived dispersant* Hirokuni Jintoku, Yoko Matsuzawa, Hideyuki Kihara, Masaru Yoshida81

Graphene synthesis
1P-40 Effect of the flow regime on graphene growth
Ya-Ping Hsieh, * Ching-Hua Shih, Yi-Jing Chiu, Mario Hofmann

82

xxiii

September 8th, Thu.
Plenary Lecture: 40 min (Presentation) + 5 min (Discussion)Special Lecture: 25 min (Presentation) + 5 min (Discussion)Award Nominee Lecture: 10 min (Presentation) + 10 min (Discussion)
General Lecture: 10 min (Presentation) + 5 min (Discussion)
Poster Preview: 1 min (Presentation)
Plenary Lecture ( 9:45-10:30 )2S-4

Growth of Single-Walled Carbon Nanotubes with Controlled Structure* Jin Zhang

4

General Lecture ( 10:30-11:15 )Properties of nanotubes࣭Formation and purification of nanotubes
2-1
Doping and electronic properties of BN nanotubes* Susumu Saito, Yoshitaka Fujimoto
2-2

2-3

22

Chirality selective synthesis of single-walled carbon nanotubes with sputtered Co-W
catalyst and its possible mechanism* Hua An, Rong Xiang, Hiroki Takezaki, Shinnosuke Ohyama, Yang Qian, Taiki Inoue,
Shohei Chiashi, Shigeo Maruyama

23

Development of new polymeric gels for the M/S separation of single-wall carbon nanotubes* Guowei Wang, Xiaojun Wei, Atsushi Hirano, Shunjiro Fujii, Takeshi Tanaka,
Hiromichi Kataura

24>>>>>>> Coffee Break ( 11:15-11:30 ) <<<<<<<
Osawa Award Nominee Lecture ( 11:30-11:50 )2-4

Utilizing a caged electron spin of an endohedral metallofullerene for molecular location
sensing* Yuta Takano, Ryo Tashita, Mitsuaki Suzuki, Shigeru Nagase, Hiroshi Imahori,Takeshi Akasaka

25

Iijima Award Nominee Lecture ( 11:50-12:30 )
2-5

2-6

Evaluation of Enantiomeric Purity of Single-Wall Carbon Nanotubes using FlavinMononucleotide* Xiaojun Wei, Yohei Yomogida, Atsushi Hirano, Shunjiro Fujii, Takeshi Tanaka,
Naomichi Sato, Riichiro Saito, Hiromichi Kataura

26

Low temperature growth of ultra-high mass density carbon nanotube forests on conductive
supports* Hisashi Sugime, Santiago Esconjauregui, Lorenzo D'Arcié, John Robertson27>>>>>>> Lunch Time ( 12:30-13:45 ) <<<<<<<
Award Ceremony ( 13:45-14:00 )General Meeting of the FNTG Society ( 14:00-14:30 )Special Lecture ( 14:30-15:00 )2S-5

Super-Growth CVD: Past, Present, and Future* Don Futaba

xxiv

5

September 8th, Thu.
General Lecture ( 15:00-15:45 )Applications of graphene
2-7Hydrogenation properties of supported metal nanoparticles on graphene* Shigehito Isobe, Kengo Omori, Satoshi Yasuda
2-8

2-9

28

Metal Phthalocyanine/Reduced Graphene Oxide Hybrid Electrocatalyst for cathodic Oxygen
Reduction Reaction* Shinichi Murakami, Michio Koinuma, Yasumichi Matsumoto

29

Oxygen reduction reaction catalyzed by copper-incorporated carbon electrocatalysts* Masaru Kato, Marika Muto, Ichizo Yagi

30>>>>>>> Coffee Break ( 15:45-16:00 ) <<<<<<<
General Lecture ( 16:00-16:30 )Properties of graphene࣭Other topics
2-10
Novel Proton/Electron Mixed Conductor using Graphene Oxide* Kazuto Hatakeyama, Michio Koinuma, Tetsuya Kida, Shinya Hayami, Yasumichi
Matsumoto2-11

Threshold shift of diamond electrolyte-solution gate field-effect transistor by anodic
oxidation* Masafumi Inaba, Keisuke Igarashi, Takuro Naramura, Shuhei Abe, Masanobu Shibata,
Yukihiro Shintani, Atsushi Hiraiwa, Hiroshi Kawarada

Poster Preview ( 16:30-17:10 )Poster Session ( 17:10-18:45 )Supramolecular Differentiation for Construction of Anisotropic C60 Nanostructures by
Time-Programmed Control of Interfacial Growth* Kosuke Minami, Partha Bairi, Jonathan P. Hill, Waka Nakanishi, Lok Kumar Shrestha,
Liu Chao, Koji Harano, Eiichi Nakamura, Katsuhiko Ariga

Applications of fullerenes
2P-3
Enhancement of Fill Factor in Inverted Organic Solar Cells using Self-Assembled
Monolayer of Fullerene Catechol* Il Jeon, Keisuke Ogumi, Takafumi Nakagawa, Yutaka Matsuo
2P-4

32

(侀) Candidates for the Young Scientist Poster Award

Chemistry of fullerenes
2P-1
Synthesis and self-aggregation properties of various triazoliumfullerene* Toshihiko Okada, Saori Inaba, Naohiko Ikuma, Hidehiro Sakurai
2P-2

31

Solid-State NMR Studies on the Aggregated Structures in Organic Bulk Heterojunction
Solar Cells* Saki Kawano, Hironori Ogata

Endohedral metallofullerenes
2P-5
Triplet state of molecular oxygen in open C60* Azusa Kato, Tsukasa Futagoishi, Yasujiro Murata, Tatsuhisa Kato

xxv

83

84

85

86

87

September 8th, Thu.
Properties of nanotubes
2P-6
Interactions between carbon nanotubes and aromatic amino acids* Atsushi Hirano, Kazuki Iwashita, Kentaro Shiraki, Shun Sakuraba, Tomoshi Kameda,
Rieko Ishii, Takeshi Tanaka
2P-7

2P-8

2P-9

Synthesis of local phenylboronic acid-modified single-walled carbon nanotubes and its PL
behavior* Hisashi Onitsuka, Tomohiro Shiraki, Naotoshi Nakashima

89

Geometries and electronic properties of MoS2 nanotube* Shuntaro Oshima, Masayuki Toyoda, Susumu Saito

90

Theory of optimized power factor of low-dimensional semiconductors and application tosemiconducting carbon nanotubes* Nguyen Tuan Hung, Ahmad Ridwan Tresna Nugraha, Riichiro Saito

91

Applications of nanotubes
2P-10 Effect of internal structure on the electrical performance of MWCNT-Cu wires* Rajyashree Sundaram, Atsuko Sekiguchi, Takeo Yamada, Kenji Hata
2P-11

88

92

Measurement of photoinduced force acting on polystyrene microsphere by carbon nanotube
mechanical resonator* Masaaki Yasuda, Kuniharu Takei, Takayuki Arie, Seiji Akita

93

Photothermoelectric properties of carbon nanotubes terahertz imagers and inspection
applications* Daichi Suzuki, Shunri Oda, Yukio Kawano

94

Flexible heater and temperature sensor for temperature range higher than 100 °C using
multiwall carbon nanotube surface* Daiki Kobayashi, Kuniharu Takei, Takayuki Arie, Seiji Akita

95

Novel method to detect dopamine with high sensitivity based on adsorption onto carbon
nanotube* Takuya Ushiyama, Shigeru Kishimoto, Yutaka Ohno

96

Formation and purification of nanotubes
2P-15 Single-walled carbon nanotube synthesis by alcohol catalytic CVD in high vacuum using
Rh catalysts* Takahiro Maruyama, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Yoko Iizumi,
Toshiya Okazaki, Sumio Iijima

97

2P-12

2P-13

2P-14

2P-16

2P-17

2P-18

Combinatorial screening of binary metal catalyst for chirality-selective growth of
single-wall carbon nanotubes* Michiko Edo, Hisashi Sugime, Suguru Noda

98

Substrate design for high efficiency single walled carbon nanotube synthesis* Naoyuki Matsumoto, Azusa Oshima, Sachiko Ishizawa, Kenji Hata, Don Futaba

99

Control of catalyst surface states towards synthesis of single chirality single-walled carbon
nanotubes using plasma CVD* Bin Xu, Toshiro Kaneko, Toshiaki Kato

100

xxvi

September 8th, Thu.
Endohedral nanotubes
2P-19 First-principles calculations of electronic states and solid state NMR parameters in alkali
halides encapsulated single-walled carbon nanotubes* Eita Yokokura, Yosuke Kataoka, Hironori Ogata

101

Graphene synthesis
2P-20 CVD growth of nitrogen doped multilayered graphene by mixing the melamine vapor tomethane and their characterization
Takahiro Yoshida, Bun Tsuchiya, * Shunji Bandow

102

2P-21

Effect of crystallization of Ni catalyst on low-temperature direct-precipitation of multilayer
graphene* Jumpei Yamada, Yuki Ueda, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama,
Shigeya Naritsuka

Applications of graphene
2P-22 Diffusion of Pt atoms on non-metallic atom-doped graphene support* Syun Hasegawa, Yuji Kunisada, Norihito Sakaguchi
2P-23

2P-24

2P-25

2P-26

2P-29

105

Electrochemical properties of CVD-grown monolayer graphene oxidized by UV/O3
treatment* Kouhei Yanai, Noritoshi Nakagawa, Shinji Koh

106

The effect of graphene on growth and viability of bacteria and yeast* Kyohei Mizobuchi, Noritoshi Nakagawa, Masahiro Hirano, Fumiyoshi Abe, Shinji Koh

107

Edge-disorder effect on Id-Vg characteristics of GNR-FETs* Kengo Takashima, Takahiro Yamamoto

108

109

Probing interface strain in graphene and boron nitride in-plane heterostructures* Shintaro Yoshimura, Yu Kobayashi, Shun Ogawa, Shogo Sasaki, Yutaka Maniwa,
Yasumitsu Miyata

110

Polarity and magnetism of rippled graphene with topological defect* Mina Maruyama, Susumu Okada

111

Atomic layers
2P-30 Valley polarization mapping in transition metal dichalcogenides heterostructures* Yusuke Hasegawa, Kazunari Matsuda, Yuhei Miyauchi, Shinichiro Mouri
2P-31

104

Electrochemical characteristics of enzyme/graphene electrodes* Noritoshi Nakagawa, Kouhei Yanai, Masahiro Hiraro, Shinji Koh

Properties of graphene
2P-27 Effect of metal nanoparticles on carrier accumulation in graphene under an electric field* Manaho Matsubara, Susumu Okada
2P-28

103

Photoluminescence properties of monolayer MoS2 FETs fabricated by dry-transfer process* Wang Xiaofan, Yuhei Miyauchi, Kazunari Matsuda

xxvii

112

113

September 8th, Thu.
2P-32

2P-33

2P-34

Growth and characterization of monolayer Mo1-xRexS2 alloys* Shohei Mori, Shogo Sasaki, Yu Kobayashi, Liu Zheng, Shoji Yoshida, Takahiro Takeuchi,
Hidemi Shigekawa, Kazutomo Suenaga, Yutaka Maniwa, Yasumitsu Miyata

114

Anisotropic optical absorption and Raman spectra in GaTe with the interference effect of thesubstrates* Yuki Tatsumi, Shengxi Huang, Xi Ling, Huaihong Guo, Teng Yang, Mildred S. Dresselhaus,
Riichiro Saito

115

Bandgap modulation of bilayer MoS2 by electric field effect* Tetsuki Saito, Yu Kobayashi, Kenji Watanabe, Takashi Taniguchi, Yutaka Maniwa,
Yasumitsu Miyata

116

Nanowires
2P-35 Growth of Diamond Nanocylinder Forest Using Template-Assisted Microwave Plasma
Chemical Vapor Deposition* Wenxi Fei, Masafumi Inaba, Yu Hirano, Hideki Masuda, Hiroshi Kawarada

117

Carbon nanoparticles
2P-36 In situ synchrotron X-ray diffraction study of structural changes on neutron-irradiatedhighly oriented pyrolytic graphite under static high pressure and temperature* Tomohiko Hisakuni, Shin-ichi Honda, Masahito Niibe, Mititaka Terasawa, Yuji Higo,
Keisuke Niwase, Hirokazu Izumi, Eiji Taguchi, Tadao Iwata

118

Bio
2P-37

Upconversion photoluminescense imaging of carbon nanotubes in mice tissues* Saki Okudaira, Masako Yudasaka, Yoko Iizumi, Toshiya Okazaki, Kazunari Matuda,
Yuhei Miyauchi

119

Other topics
2P-38 Thermal interface materials of vertically aligned carbon fibers embedded densely inpolymer matrix* Ryo Yamada, Hisashi Sugime, Toshio Osawa, Suguru Noda

120

Applications of graphene
2P-39 Ultrathin graphene-based solar cells
Ya-Ping Hsieh, * Chin-Fu Chen, Mario Hofmann

121

Banquet ( 19:00-21:00 )2F, Tancho, Hotel Sapporo Garden Palace

xxviiiSeptember 9th, Fri.
Special Lecture: 25 min (Presentation) + 5 min (Discussion)
General Lecture: 10 min (Presentation) + 5 min (Discussion)
Poster Preview: 1 min (Presentation)
Special Lecture ( 9:45-10:15 )3S-6

A Study about improving Safety of Carbon Nanotube - Development of Non-airborne type
Carbon Nanotube * Hideyuki Hisashi

6

General Lecture ( 10:15-11:00 )Properties of nanotubes࣭Applications of graphene
3-1
Optical Properties of Oxidized (6,5) Single-Wall Carbon Nanotubes* Mari Ohfuchi, Yoshiyuki Miyamoto
3-2

3-3

33

Graphene coated silver substrate for SERS with acid tolerance* Seiya Suzuki, Masamichi Yoshimura

34

A nanoporous graphene terahertz detector* Juxian Li, Suzuki Daichi, Shunri Oda, Yoshikazu Ito, Fujita Takeshi, Yukio Kawano

35>>>>>>> Coffee Break ( 11:00-11:15 ) <<<<<<<
Special Lecture ( 11:15-11:45 )3S-7

Carbon nanotube application and safety in artificial joints* Naoto Saito

7

General Lecture ( 11:45-12:30 )Properties of graphene
3-4Synthesis and Photophysical Properties of Chemically Converted Graphene–Pyrene Linked
Systems* Tomokazu Umeyama, Jinseok Baek, Imahori Hiroshi
3-5

3-6

36

Diazonium Chemistry for Tunable Grafting and Nanomanipulation
John Greenwood, Tomoko Inose, Yasuhiko Fujita, Oleksandr Ivasenko, Yoshito Tobe,
Steven De Feyter, * Hiroshi Uji-I

37

Graphene Nanoribbon Fabrication by Gate-Controlled Edge-Selective Photo-Oxidation* Ryo Nouchi, Morihiro Matsumoto, Keiichiro Ikeda

38>>>>>>> Lunch Time ( 12:30-13:45 ) <<<<<<<
Poster Preview ( 13:45-14:25 )Poster Session ( 14:25-16:00 )(侀) Candidates for the Young Scientist Poster Award

Chemistry of fullerenes
3P-1
Preparation of methanofullerene derivatives: [70]PCBM and bis-[70]PCBM with highregioselectivity* Takatoshi Ito, Yuta Inoue, Tetsuo Iwasawa, Fukashi Matsumoto, Toshiyuki Iwai,
Kazuyuki Moriwaki, Yuko Takao, Takumi Mizuno, Toshinobu Ohno
3P-2

Structure Determination of Saturn-Like Oligothiophene Macrocycle with C61H2 and C70* Hiroshi Okada, Hideyuki Shimizu, Shinobu Aoyagi, Biao Zhou, Masahiko Iyoda,
Yutaka Matsuo

xxix

122

123

September 9th, Fri.
Applications of fullerenes
3P-3
Preparation of [C60]Fullerene Nanowhisker-Silver Nanoparticle Composites and Their
Catalytic Activity for Oxidation of Tetramethylbenzidine with Hydrogen Peroxide* Jeong Won Ko, Weon Bae Ko
3P-4

124

Color tuning of semitransparent organic solar cells using oxide/metal/oxide transparent
anode* Shunjiro Fujii, Hiromichi Kataura

125

Endohedral metallofullerenes
3P-5
Isoration of a missing Fullerenes Gd@C2n derivatives* Ayano Nakagawa, Shinobu Aoyagi, Haruka Omachi, Zhiyong Wang, Katsuma Ishino,
Ryo Kitaura, and Hisanori Shinohara

126

Properties of nanotubes
3P-6In-situ TEM study on structure and optical emission during Joule heating of a multiwall
carbon nanotube* Koushi Nishikawa, Koji Asaka, Hitoshi Nakahara, Yahachi Saito

127

3P-7

3P-8

3P-9

Novel Dispersion and Evaluation Method for CNTs by Using Ultrasonic Mixer,PR-1* Takatsuka Takayuki

128

Pyrene dimer and monomer on single-walled carbon nanotubes* Jinseok Baek, Tomokazu Umeyama, Yuta Sato, Kazu Suenaga, Hiroshi Imahori

129

Electronic structure of CNT thin films with nanoscale interfaces* Taketo Kochi, Susumu Okada

130

under an electronic field

Applications of nanotubes
3P-10 Voltage generation by movement of electrolyte solution on carbon nanotube thin film
* Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno
3P-11

3P-12

3P-13

3P-14

3P-15

131

Controlled n-type doping of carbon nanotube thin-film transistors with salt and crown ether* Fumiyuki Nihey, Kei Endo, Jiang Pu, Noriyuki Tonouchi, Fusako Sasaki, Yuki Kuwahara,
Takeshi Saito, Hiroyuki Endoh132

High-yield fabrication of n-type carbon nanotube thin-film transistors on flexible plastic
substrate* Fu-Wen Tan, Jun Hirotani, Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno

133

Response to pH of carbon nanotube thin-film transistors for sensor applications* Kana Hasegawa, Nguyen Viet, Takuya Ushiyama, Shigeru Kishimoto, Yutaka Ohno

134

n-Type Thermoelectric Properties of Single-walled Carbon Nanotubes encapsulating
1,1'-Bis(diphenylphosphino)ferrocene* Yu Iihara, Yoshiyuki Nonoguchi, Tsuyoshi Kawai

135

Gradual etching and long-length burning of metallic single-walled carbon nanotubes toward
semiconducting nanotube arrays* Taiki Inoue, Keigo Otsuka, Shohei Chiashi, Shigeo Maruyama

136

xxx

September 9th, Fri.
Formation and purification of nanotubes
3P-16 Effect of 7,8-substituents of Flavin Derivatives on Selective Separation of Single-Walled
Carbon Nanotubes* Kanako Nishimura, Fumiyuki Toshimitsu, Naotoshi Nakashima
3P-17

137

Efficient growth and chirality control of single-walled carbon nanotubes by extended
alcohol catalytic chemical vapor deposition* Bo Hou, Cheng Wu, Yoko Iizumi, Takahiro Morimoto, Toshiya Okazaki, Taiki Inoue,
Shohei Chiashi, Rong Xiang, Shigeo Maruyama

138

Growth of Single-Walled Carbon Nanotubes from Solid-Phase Cobalt Carbide
Nanoparticles by Molecular Dynamics Simulations* Ryo Yoshikawa, Hiroyuki Ukai, Takagi Yukai, Yann Magnin, Shohei Chiashi,
Christophe Bichara, Shigeo Maruyama

139

In-Plane TEM Imaging of Bimetallic Catalyst for SWNT Growth* Rong Xiang, Akihito Kumamoto, Hua An, Taiki Inoue, Shohei Chiashi, Yuichi Ikuhara,
Shigeo Maruyama

140

Endohedral nanotubes
3P-20 Oxidative Decomposition of Carbon Nanotubes and Extraction of Encapsulated Materials* Miho Yamagishi, Haruka Omachi, Masachika Kato, Ryo Kitaura, Hisanori Shinohara

141

Graphene synthesis
3P-21 Growth of Single-Crystal Bi-Layer Graphene Using Alcohol CVD* Masaki Sota, Mohamed Atwa, Kotaro Kashiwa, Naomasa Ueda, Xiao Chen, Taiki Inoue,
Rong Xiang, Shohei Chiashi, Shigeo Maruyama

142

3P-18

3P-19

3P-22

Effects of nanobar-catalyst types on structure of graphene nanoribbon grown with advanced
plasma CVD* Yuta Wato, Hiroo Suzuki, Toshiro Kaneko, Toshiaki Kato

143

Applications of graphene
3P-23 Enhancement of laser-induced water decomposition by 2D sheets studied by first-principles
simulations II* Yoshiyuki Miyamoto, Hong Zhang, Xinlu Cheng, Angel Rubio

144

3P-24

3P-25

3P-26

3P-27

3P-28

Size separation of graphene nanosheets by gel chromatography* Shunichi Ishiguro, Takaaki Tomai, Yuta Nakayasu, Naoki Tamura, Itaru Honma

145

Evaluation of GO Catalyst regarding oxidative amine coupling reaction* Takuya Isaka, Kentaro Tajima, Tomoki Yamashina, Yutaka Ohta, Kazuyuki Takai

146

Magnetic Characterization of NOx adsorption by Nanographene Host Material
Satomi Nishijima, Asataro Yamada, * Kazuyuki Takai

147

Electrochemical grafting of aryl molecules onto graphene on Au* Shun Tanno, Yusuke Sato, Ryota Kumagai, Koji Nakashima, Masaru Kato,
Satoshi Yasuda, Kei Murakoshi, Ichizo Yagi

148

Fabrication of Graphene Composite Plasmon-Active Photoelectrode* Kensuke Yasuda, Hiro Minamimoto, Ruifeng Zhou, Satoshi Yasuda, Kei Murakoshi

149

xxxi

September 9th, Fri.
Properties of graphene
3P-29 Direct observation of ultrafast carrier dynamics in graphene on SiC(000-1) studied by timeand angle-resolved photoemission spectroscopy* Takashi Someya, Hirokazu Fukidome, Hiroshi Watanabe, Takashi Yamamoto,
Masaru Okada, Hakuto Suzuki, Yu Ogawa, Takushi Iimori, Nobuhisa Ishii, Teruto Kanai,
Keiichiro Tashima, Baojie Feng, Susumu Yamamoto, Jiro Itatani, Fumio Komori,Kozo Okazaki, Shik Shin, Iwao Matsuda
3P-30

150

Work function modulation of edge functionalized graphene nanoflakes* Remi Taira, Ayaka Yamanaka, Susumu Okada

151

Charge/Covalent Interactions at the Interface between Graphene and Electrolyte* Daisuke Suzuki, Kazuyuki Takai

152

Atomic layers
3P-32 Growth and optical properties of Nb-doped WS2 monolayers* Shogo Sasaki, Yu Kobayashi, Zheng Liu, Kazutomo Suenaga, Yutaka Maniwa,
Yuhei Miyauchi, Yasumitsu Miyata

153

3P-31

3P-33

Layer number controlled synthesis of integrated WS2 array* Li Chao, Kaneko Toshiro, Kato Toshiaki

154

Polarization-resolved photoluminescence spectroscopy on monolayer transition metal
dichalcogenides under electrostatic gating* Wenjin Zhang, Yusuke Hasegawa, Shinichiro Mouri, Kazunari Matsuda, Yuhei Miyauchi

155

Electron beam lithography induced strain in MoS2 crystal* Masahiro Matsunaga, Ayaka Higuchi, Guanchen He, Tetsushi Yamada, Peter Krüger,Jonathan Bird, Yuichi Ochiai, Nobuyuki Aoki

156

Nanohorns
3P-36 Optimization of Preparation Conditions for Fibrous Aggregates of Single-Walled Carbon
Nanohorns* Ryota Yuge, Fumiyuki Nihey, Kiyohiko Toyama, Masako Yudasaka

157

Other topics
3P-37 Ambipolar transistors based on random networks of WS2 nanotubes* Mitsunari Sugahara, Kawai Hideki, Yohei Yomogida, Yutaka Maniwa, Susumu Okada,Kazuhiro Yanagi

158

3P-34

3P-35

3P-38

3P-39

Self-assembled nanofibers of fluorinated bisanthene derivatives* Hironobu Hayashi, Hiroko Yamada

159

Synthesis of Sulfur-doped Graphene Oxides* Haruka Omachi, Zois Syrgiannis, Yasuhiro Kinno, Maurizio Prato, Hisanori Shinohara

160

xxxii

September 9th, Fri.
Special Lecture ( 16:00-16:30 )3S-8

Functionalization of C60 and M3N@C80 for bioapplication* Yoko Yamakoshi

8

General Lecture ( 16:30-17:15 )Endohedral nanotubes࣭Chemistry of fullerenes࣭Fullerenes
3-7
Doping of porous nanostructures* Hidetsugu Shiozawa
3-8

3-9

39

Fullerene Modification by Using Fullerene Cation Intermediate: Migration and Cyclization* Yutaka Matsuo

40

A15-structured Cs3C60 : the first non-cubic A3C60 fulleride* Yasuhiro Takabayashi, Ruth H. Zadik, Kosmas Prassides

41

xxxiiiᇶㄪㅮ₇࣭≉ูㅮ₇
Plenary & Special Lectures

1S-1
2S-4
3S-6

~
~
~

1S-3
2S-5
3S-8

1S-1
Wafer-Scale Monodomain Films of Spontaneously Aligned
Single-Wall Carbon Nanotubes
Weilu Gao1, Xiaowei He1, and ○Junichiro Kono1,2,3
1

Department of Electrical & Computer Engineering, Rice University, Houston, Texas, USA
2
Department of Physics & Astronomy, Rice University, Houston, Texas, USA
3
Department of Materials Science & NanoEngineering, Rice University, Houston, Texas, USA
One of the grand challenges in nanoscience and nanotechnology is how to create
macroscopic devices by assembling nano-objects while preserving their rich variety of
extraordinary properties. For example, the one-dimensional character of electrons, phonons,
and excitons in individual single-wall carbon nanotubes (SWCNTs) leads to extremely
anisotropic electronic, thermal, and optical phenomena that have stimulated much interest indiverse disciplines, but their macroscopic manifestations have been limited. Therefore,worldwide efforts are in progress to develop ways to produce large-scale architectures ofaligned SWCNTs.
Here, we report a simple and robust method for
preparing exceptionally large (> cm2) monodomain
films of aligned SWCNTs based on spontaneousalignment that occurs during slow vacuum filtration.
The produced films are globally aligned within±1.5° (the nematic order parameter ~ 1) and arehighly packed, containing 106 nanotubes in across-sectional area of 1 μm2. The film thickness iscontrollable from a few nm to ~100 nm; sufficiently
thick films act as ideal polarizers in the terahertz
frequency range. This method is universally
applicable to SWCNTs synthesized by various
methods.
Moreover, by combining this method withrecently developed sorting techniques, we fabricatedhighly aligned and chirality-enriched SWCNT Fig.1: The film is opaque to lightthin-film devices. Semiconductor-enriched devices polarized parallel to the SWCNT
exhibitedpolarizedlightemission, alignment direction and transparent topolarization-dependent photocurrent, and anisotropic light polarized perpendicular to thedirection on a macroscopic
conductivities and transistor action with high on/off alignment
scale (top) and a microscopic scaleratios. These results significantly advance the (bottom). Note also that the film can be
frontier of research toward scalable carbon-based easily patterned using conventional
photolithography techniques (bottom).
electronics and photonics.
[1] X. He, W. Gao, L. Xie, B. Li, Q. Zhang, S. Lei, J. M. Robinson, E. H. Hároz, S. K. Doorn, R. Vajtai, P. M.
Ajayan, W. W. Adams, R. H. Hauge, and J. Kono, Nature Nanotechnology 11, 633 (2016).
Corresponding Author: Junichiro Kono
Tel: +1-713-348-2209, Fax: +1-713-348-3091
E-mail: kono@rice.edu

-1-

1S-2
Growth and characterization of in-plane atomic layer heterostructuresżYasumitsu Miyata1,2
1Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
2
JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan

Semiconductor heterojunction interfaces have been an important topic, both in modern
solid state physics and in electronics and optoelectronics applications. Recently, the in-plane
heterostructures of atomically-thin transition metal dichalcogenides (TMDCs, Fig.1a) are
expected to realize one-dimensional (1D) electronic systems at their heterointerface due totheir tunable electronic properties. Even though there have been several reports on the growthand device studies, it is still an important challenge to develop the microscopic basis ofelectronic properties of such atomic-layer heterojunction interfaces. For this purpose, we havefabricated high-quality TMDC atomic layers and various heterostructures based on TMDCs[1-5]. Herein, we report on unique electrical potential modulations of heterojunction
interfaces based on TMDC atomic layers [5].
Chemical vapor deposition (CVD) was used to prepare high-quality TMDC samples on
exfoliated graphite flakes, as reported in our previous paper [1]. As shown in Fig. 1b, WS2 (orMoS2) grains are initially synthesized on the graphite, after which the second growth processof another TMDCs is conducted with firstly-grown grains. Scanning tunnelingmicroscopy/spectroscopy (STM/STS) analyses revealed that the monolayer systems haveatomically-sharp interface structure, and form conventional type II heterojunction withstaggered gap [3]. Interestingly, we found that the bilayer samples showed the formation of
1D confining potential (potential barrier) in the valence (conduction) band around theheterointerface [5]. The present findings indicate that the atomic layer heterojunctions provide
a novel approach to realizing tunable 1D electrical potential for embedded quantum wires andultrashort barriers of electrical transport.

Figure 1. (a) Structure model of in-plane MoS2/WS2 heterostructure and (b) its growth process by chemical
vapor deposition.
[1] Y. Kobayashi et al., ACS Nano, 9, 4056 (2015).
[2] Y. Kobayashi et al., Nano Res., 8, 3261 (2015).
[3] S. Yoshida, et al., Sci. Rep., 5, 14808 (2015).
[4] S. Sasaki et al., Appl. Phys. Express 9, 071201 (2016).
[5] Y. Kobayashi et al., Sci. Rep., in press.
Corresponding Author: Y. Miyata
Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp

-2-

1S-3
Selection rules of optical excitations for single-walled carbon nanotubes
Hiroshi Ajiki
School of Science and Engineering, Tokyo Denki University, Hatoyama 350-0394, Japan
A single-walled carbon nanotube (SWNT) has cylindrical structure of a seamlesslyrolled-up graphene. Because of its characteristic structure, the SWNT can be a metal or asemiconductor whose bandgap is inversely proportional to the diameter, and the bandgap canbe changed by applying a magnetic flux passing through the tube axis due to the
Aharonov-Bohom (AB) effect [1]. These attractive properties can be directly observed fromoptical spectra. To analyze the electronic states from the optical spectra, it is necessary toknow optical selection rules. The selection rules of a SWNT depend on the direction of lightpolarization because of its cylindrical structure [1]. Interestingly, spectral peaks corresponding
to optically allowed transitions do not appear for light polarization perpendicular to the tube
axis [1]. This fact comes from the depolarization field arising from induced charge density on
the cylindrical surface.
An optically excited electron-hole pair forms a bound state called an exciton. The exciton
effects are significant in low dimensional systems such as the SWNT. In fact, the binding
energy of the exciton in a SWNT reaches a few hundred millielectronvolts, and thus theexcitons can be observed at room temperature [1]. Because of the exciton effects, spectral
peaks become large and narrow for light polarization parallel to the tube axis, and small but
well-defined peaks appear in spite of the depolarization effect for perpendicular polarization.
The small peaks originate from the bonding states (bright states) of degenerate excitons
around the K and K’ points, which is formed via an electron-hole exchange interaction. The
anti-bonding states of the K and K’ excitons are optically inactive states (dark states) [1]. As amatter of fact, the dark states have a slight oscillator strength (quasidark states) because thedegeneracy of the K and K’ excitons is lifted due to the intrinsic band asymmetry of theelectron and hole [2]. The band asymmetry parameters can be evaluated by observing
intensity ratio of the quasidark to bright states in photo-luminescence excitation spectra.
The optical selection rules are valid when the light wavelength is much larger than the
diameter of a SWNT, and this condition is fully satisfied in the usual situation. This meansthat the selection rules are violated for a high-gradient light field, that is, the field intensity
significantly changes across the diameter of the SWNT. Such a high-gradient light field isgenerated by exciting surface plasmons. We have shown the selection-rule breakdown for
perpendicular polarization of an isolated SWNT placed in a nanogap of a metallic nanodimer[3]. Although the Raman signal for the perpendicular polarization is weak, we can detect thesignal because of the strong enhancement of the light field due to the surface plasmons. The
breakdown of the selection rules has been numerically simulated [3]. This study indicates thatthe metallic nanostructures not only enhances the light intensity, but increases the opticalexcitation channels beyond the selection rules.
[1] H. Ajiki, J. Phys.: Cond. Matt. 24, 483001 (2012) and referecnes therein.
[2] Y. Miyauchi, H. Ajiki, and S. Maruyama, Phys. Rev. B 81, 121415(R).
[3] M Takase, H.Ajiki, Y.Mizumoto, K. Komeda, M. Nara, H. Nabika, S. Yasuda, H. Ishihara, and K. Murakoshi,Nat. Photonics, 7, 550 (2013).
Corresponding Author: H. Ajiki
Tel: +81-49-296-2912, Fax: +81-49-296-5720,
E-mail: ajiki@mail.dendai.ac.jp

-3-

2S-4
Growth of Single-Walled Carbon Nanotubes with Controlled Structure
Jin ZHANG
Center for Nanochemistry, College of Chemistry and Molecular Engineering, Peking
University, Beijing, 100871, P.R. China
Email: jinzhang@pku.edu.cn
In this talk, we will focus on the controlled growth of SWNTs arrays with ultra-highdensity, high ratio semiconducting properties and special chiral angles. For the SWNTs arrayswith ultra-high density, Trojan catalysts (released from substrate) was developed and thedensity can be as high as 150 tubes/μm. Combining Trojan catalysts with Mo nanoparticles ascooperating catalysts, the ultra-high density SWNTs arrays with wafer-scale area can beobtained. For the SWNTs arrays with semiconducting properties, oxides catalysts with oxygen
vacancy, bimetal catalysts and uniform Mo2C catalyst were used to grow semiconducting
SWNTs arrays and ratio of semiconducting tubes can be higher than 95%. For the SWNTs
arrays with special chiral angles, based on the analysis the thermodynamics and kinetics of
SWNTs growth, horizontally (2m, m) SWNT arrays with chiral angle of 19.1°, tubes arrayswith small chiral angles(less than 10°) and near-armchair tubes ((n, n-1) or (n, n-2)) can begrown under different conditions.
Reference:[1] Chemical Vapor Deposition Synthesis of Near Zigzag Single-walled Carbon Nanotubes with Stable
Tube-Catalyst Interface, Science Advance, 2016, 2, e1501729.
[2] Growth of High-Density Horizontally Aligned SWNT Arrays using Trojan Catalysts, Nat. Commun. 6(2015), 6099.
[3] Growth of Horizontal Semiconducting SWNT Arrays with Density Higher than 100 tubes/um using
Ethanol/Methane Chemical Vapor Deposition, J. Am. Chem. Soc. 2016, 138, 6727-6730.
[4] Diameter-Specific Growth of Semiconducting SWNT Arrays Using Uniform Mo2C Solid Catalyst, J. Am.
Chem. Soc. 137(28) (2015), 8904-8907.
[5] Selective Scission of C–O and C–C Bonds in Ethanol using Bimetal Catalysts for the Preferential Growthof Semiconducting SWNT Arrays, J. Am. Chem. Soc,137 (3) (2015), 1012-1015.

-4-

2S-5
Super-Growth CVD: Past, Present, and Futureż Don N. Futaba1,2
1National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1Higashi, Tsukuba, Ibaraki, 305-8565, Japan.
22Technology Research Association for Single Wall Carbon Nanotubes (TASC), Central 5,
1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan.

Over two decades have passed since the discovery and structural elucidation of the carbon
nanotube (CNT), however industry has yet to fully realize the promise of their uniqueproperties. For single wall carbon nanotubes (SWCNTs), one of the major obstacles has been
the low cost, industrial availability. Twelve years ago, water-assisted chemical vapor
deposition (Super-growth CVD) was developed which demonstrated the highly efficientsynthesis of high purity SWCNTs, and recently, an industrial production plant, based on thistechnology went into operation to realize the industrial use of SWCNTs.
This presentation will provide an overview of our recent progress in the synthesis andapplication of millimeter-scale, vertically-aligned SWNTs using Super-growth CVD. First, I
will provide a brief description of the day Super-Growth CVD was serendipitously discovered.
Second, I will describe the current state. Finally, I will present our future outlook.
This paper is based on results obtained from a project commissioned by the New Energy
and Industrial Technology Development Organization (NEDO).

Corresponding Author: D. Futaba
Tel: +81-28-861-4654, Fax: +81-28-861-4851
E-mail: d-futaba@aist.go.jp

-5-

3S-6
A Study about improving Safety of Carbon Nanotube- Development of Non-airborne type Carbon Nanotube ż+LGH\XNL+LVDVKL
Mitsubishi Corporation, Marunouchi Park Bldg.6-1.Marunouchi 2-chome,
Chiyoda-Ku, Tokyo, 100-8086.Japan
Carbon Nanotube (CNT) has a light-weight and numerous mechanical properties, such as
higher mechanical strength, higher electrical conductivity, higher thermal conductivity and higher heat
resistance. So CNT sometimes is described as “Black diamond in 21st century”. Other hand the worldwide
demand for CNT has not grown in these 30 years. In spite of those advantages, the worldwide demand
volume of CNT is several hundred metric tons per year and is much smaller than that of Carbon Black (ca.
12 million metric tons per year). Except its relatively high price, the main reason for this low-demand of
CNT is on the public uncertainties over its safety. Recently several researches comment as follows. “On
manufacturing process of CNT and CNT related products, the concern about CNT’s penetration into
worker’s abdominal cavity is not realistic. But we must emphasize the inhalation risk.” The bulk density
value of CNT is in a smallest-level category among all raw materials. So by handling CNT in
manufacturing process, CNT particles are released into the air and remain for a long time. Airborne CNT
particle will not settle easily. Then this situation will cause the inhalation risk. Granulation is one of thecommon methods to increase bulk density of powdery materials. Because the surface of CNT has lessactivity about chemical reaction and physical interaction with other materials, it is very difficult togranulate CNT by using of typical binders such as water. Then we developed new method of granulating
CNT based on CNT’s lipophilicity. As the result we became its bulk density to be more than ten times
value. This new granulated CNT powder is suppressed about the ability of its airborne and is also
effective to keep the hands clean during treatment of CNT by hands. Furthermore, during compoundingof CNT into plastics or rubber matrix, the new granulated CNT powder is easily fed into extruders
without bridging in the hopper. In that compounded material, the new granulated CNT particle is highly
dispersed into plastics or rubber matrix. And we can select a high concentration of CNT particle. We
indicate the new granulated CNT in the pictures, as shown Fig.1(a). The diameter of each particle is
1-2mm, and we can find that each particle is an agglomeration of smaller particles (Fig. 1(b)).

(a)

(b)

Figure 1. Photographs of (a) Granulated CNT and (b) the enlarged granules.

-6-

3S-7
Carbon nanotube application and safety in artificial joints
Naoto Saito
Institute for Biomedical Sciences, Interdisciplinary Cluster for Cutting Edge Research,
Shinshu University, Asahi 3-1-1, Matsumoto 390-8621, Japan
We have been working to conjugate carbon nanotubes (CNTs) to polyethylene for use insliding and rotating parts of artificial joints. These elements of polyethylene artificial joints
wear away with long-term use, leading to breakage of the joint and the need for surgicalrevision. With this in mind, we are developing more durable artificial joints made ofpolyethylene and CNTs to reduce the rate of wear loss. As the number of patients receiving
artificial joint replacement surgery has been rising worldwide each year, those requiringrevision surgery have also increased steadily. Thus, the clinical application of sturdier
CNT-based artificial joints is expected to dramatically reduce the need for revision and extend
the use of prostheses to younger patients.
Of course, the concerns regarding the safety of CNT inhalation are completely different
from those associated with long-term CNT implants. Therefore, safety testing of CNTs andtheir composites as implantation materials in the body must be performed, including theassessment of inflammatory reactions, acute cytotoxicity, irritation, sensitization, chronic
toxicity, and carcinogenicity. Further research and development in this area will lead to the
production of superior CNT biomaterials of benefit to a larger number of patients in the near
future [1].
[1] N. Saito et al. Chem Rev. 123, 456 (2015).
Corresponding Author: N. Saito
Tel: +81-263-37-2405, Fax: +81-263-37-3549
E-mail: saitoko@shinshu-u.ac.jp

-7-

3S-8
Functionalization of C60 and M3N@C80 for bioapplication○Yoko Yamakoshi1
1

Laboratorium für Organische Chemie, ETH Zürich, CH 8093, Switzerland

Based on the unique physicochemical properties of fullerenes such as photosensitivity andmetal encapsulation, bioapplication of fullerenes in areas such as photodynamic therapy and
MRI contrast agents have attracted significant attentions in recent decades. Because of theirextreme hydrophobicity, the preparation of water-soluble fullerene materials is critical forbioapplications. We have been focusing on the preparation of biocompatible fullerenematerials by complexation or conjugation with non-toxic poly(vinylpyrrolidone) (PVP) [1].
In this study, we have developed a bis-carboxylic acid Prato derivative of C60 (3) as a
useful precursor for further attachment of functional groups such as water-soluble polymers or
targeting moieties. A glycine derivative (1) was subjected to the 1,3-dipolar cycloaddition(Prato reaction) to C60 in the presence of formaldehyde to provide [6,6]-adduct 2 (Fig. 1,
Scheme 1). The deprotection of tBu group under acidic condition successfully provided
bis-carboxylic acid derivative 3, which was subjected to the further additions of water-soluble
PEG and PVP or solid phase peptide synthesis to provide biocompatible fullerenes such as
C60-PEG 4, C60-peptide 5, and C60-PVP 7 [2]. A similar Prato reaction was carried out to
M3N@C80 (M = Sc, Lu, Y, Gd) using N-ethylglycine as a dipole to evaluate their reactivity(Fig. 1, Scheme 2). In contrast to the result of C60, the [5,6]-adduct (9a-b) was obtained as amajor product in the reaction of Sc3N@C80 and Lu3N@C80, whereas a mixture of [5,6]- and[6,6]-adducts (9c-d, 8c-d) was obtained in the case of Y3N@C80 and Gd3N@C80. Further
kinetic and computational studies indicated that the kinetic products of Prato reactions of
M3N@C80 (M = Sc, Lu, Y, Gd) were all [6,6]-adducts 8a-d, which isomerized to thethermodynamic product [5,6]-adducts 9a-d in a manner dependent on the size of endohedral
metal cluster inside C80, which affected the energy level of the adducts due to thepyramidalization and degree of strain of the metal cluster (M3N). In the presence of excess
amount of dipole, the bis-adducts
10c-d were efficiently obtained
Scheme 1
from Y3N@C80 and Gd3N@C80
[3].
PEG

HO

Prato
reaction

O

O

HN

O

O

OH

4
3

TFA
TFAA
tolueneCHCl3
rt[6,6]-2O

O

PeptideO1) H2N Peptide
HBTU, DIPEA

HN

H
N PeptideNOO2) cleavage from resinNC60-peptide
PVP-NH2
DIPEA
5

Et

Et

N

N

6

Δ

PVP
O

N

kinetic product[6,6]-mono 8a, b[5,6]-mono 9a, b(M = Sc, Lu)

Et

Et

N

N

M3N@Ih-C80(M = Sc, Lu, Y, Gd)Omono functionalize
C60-PVP

no bis-adducts(M = Sc, Lu)

Scheme 2

Pratoreaction

H
N

HO

Et
N

7

Δ

N

Δ

Corresponding Author: Y. Yamakoshi
Tel: +41-44-633-6420
E-mail: yamakoshi@org.chem.ethz.ch

PEG

O

C60-PEG

tolenerefl., 24 h
38%

1

C60

H
N

N

O

O

PEGNH2
HBTU, DIPEA
DMF, rt

TFA
CHCl3
rt

H

O

H
N

OH

N

O

O

H

[1] Yamakoshi, Y et al. J. Chem. Soc.,
Chem. Commun. 517 (1994); Iwamoto,
Y et al. Chem. Commun. 4805 (2006);
Oriana, S et al. Chem. Comm. 49, 9302
(2013).
[2] Aroua, S. et al. Org. Lett. 16, 1688(2014); Polymer Chem. 6, 2616 (2015).
[3] Aroua, S. et al. J. Am. Chem.
Soc. 134, 20242 (2012); Chem. Eur. J.
20, 14032 (2014); J. Am. Chem.
Soc. 137, 58 (2015).

N

O

O

O

+

O

kinetic product[6,6]-mono 8c, dΔ

slow[5,6]-mono 9c, d(M = Y, Gd)N
Etregioselective[6,6],[6,6]-bisadducts(M = Y, Gd)
10c, dEt

randombis-adducts(M = Y)

no isomerization(M = Gd)

Fig.1: Prato reactions of C60 and M3N@C80 (M = Sc, Lu, Y, Gd).

-8-



୍⯡ㅮ₇
General Lectures

1-1 ~ 1-13
2-1 ~ 2-11
3-1 ~ 3- 91-1

Optical Property of Carbon Nanotubes and
Low Dimensional Atomic layer materials
by using Circular Polarized light
Riichiro Saito‫ۑ‬, Naomichi Sato, Yuki Tatsumi

Department of Physics, Tohoku University, Sendai

Circular polarized light has an angular moment which shows unique properties oncarbon nanotubes and transition metal dichalcogenide (TMD) atomic layer materials. In
the case of carbon nanotubes, we can observe the circular dichroism (CD) for chiralnanotubes. In the case of TMDs, we can observe the valley and spin polarization. In thispresentation, we discuss common optical properties by perturbation theory forelectro-magnetic fields.
In particular, for the CD of carbon nanotubes, we discuss the selection rule for thecircular polarized light. As for valley polarization, spin and valley degree of freedom of
TMD are selectively excited by circular polarized light, which are expressed by innerproduct of the polarization vector and dipole vectors. Within the tight binding method,
we calculated dipole vectors for graphene, carbon nanotubes, and TMDs, from which
we can see the common physics in the optical properties. The calculated results arecompared with the recent experimental results. We would like to propose possible
experimental observation in the optical properties with use of circular polarized light.
Corresponding Author: Riichiro Saito
e-mail : rsaito@flex.phys.tohoku.ac.jp
Web: http://flex.phys.tohoku.ac.jp

-9-

1-2
Control of photoluminescence properties of single-walled carbon nanotubes○Yutaka Maeda1, Yuya Takehana1, Akane Nishino1, Shun Minami1, Michio Yamada1,
Mitsuaki Suzuki,1 Shigeru Nagase2
1

2

Department of Chemistry, Tokyo Gakugei University, Tokyo 184-8501, Japan
Fukui Institute for Fundamental Chemistry, Kyoto University, Kyoto 606-8103, JapanPL spectroscopy is a very powerful tool for the assignment of semiconducting
single-walled carbon nanotubes (SWNTs) because it can be separately observed the E11 PL
peaks of individual SWNTs by the excitation of the E22 transitions. Recently, NIR light hasreceived significant attention in bio-imaging applications owing to the high transparency of
biological tissues. To improve the performance of SWNTs as biological imaging materials,
chirality-separated semiconducting SWNTs have been investigated, and have exhibitedsuperior performance than their non-separated ones. In addition, it was reported that sidewall
functionalization of SWNTs results in a new and bright PL peak in the longer wavelength
region. Therefore, the sidewall functionalization is an effective method for controlling the PL
characteristics of SWNTs for practical applications. We report herein the control of PL
properties of SWNTs by chemical functionalization/defunctionalization protocols.
Photoreaction of SWNTs with disulfide in the presence of oxygen afforded oxidized
SWNTs. It was revealed that the photoreaction proceeds more favorably in metallic andsmall-diameter SWNTs than the other types of SWNTs on the basis of their Raman andabsorption spectral changing [1]. When (6,5)-SWNT enriched sample was used, the intensityof the characteristic absorption and PL peak at ~976 nm (E11) decreased with an increase of a
new PL peak at ~1150 nm. Large Stokes shift allows use of E11 energy for the excitation due
to the easy elimination of Rayleigh scattering. It is noteworthy that the excitation of E11
energy increases the excitation efficiency and decreases phototoxicity in their application. To
control PL properties, dialkylation of (6,5)-SWNTs enriched sample and subsequent thermal
treatment were conducted. Dialkylated SWNTs (R1-SWNTs-R2) were synthesized using
alkyllithium (R1Li) and alkyl bromide (R2Br) [2,3]. Interestingly, the degree offunctionalization is tunable by steric hindrance of alkyl groups used in the reductive
alkylation. In addition, the subsequent thermal treatment is effective to control their degree offunctionalization. Interestingly,
new PL peaks were observed
depending on the substituentsand condition of the thermal
treatment[4].
This
methodology has advantages
for their productivity, high PL
efficiency, and large Stokes
shift.
[1] Y. Maeda et al. J. Am. Chem. Soc. 135, 6356 (2013). [2] Y. Maeda et al. Org. Lett. 12, 996 (2010).
[3] Y. Maeda et al. J. Am. Chem. Soc. 134, 18101 (2012). [4] Y. Maeda et al. Chem. Commun. 51, 13462 (2015).
Corresponding Author: Y. Maeda
Tel: +81-42-329-7512, Fax: +81-42-329-7512
E-mail: ymaeda@u-gakugei.ac.jp- 10 -

1-3
Application of carbon nanotubes as electrodes and doping methods inphotovoltaics○Il Jeon1, Shigeo Maruyama1,2, Yutaka Matsuo1,3
1
2

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan
3
University of Science and Technology of China, Anhui 230026, China

Carbon nanotubes (CNTs) have emerged as materials for next-generation electrodes insolar cells (SCs), offering a possible alternative to indium tin oxide (ITO). CNTs haveexcellent mechanical flexibility and are composed entirely of naturally abundant carbon.
Therefore, CNT transparent conductive films in SCs have been the subject of active research.
For the research in SCs, organic SCs and perovskite SCs have attracted a great deal ofattention as solution-processable and flexible light-harvesting devices that have the potential
to meet the world’s energy needs. The efficiency of SCs has increased tremendously with therecent emergence of perovskite SCs. As the result, power conversion efficiency (PCE) has
reached as high as 20%.[1] However, SC flexibility is still limited by the use of ITO, which isbendable but not completely flexible like the carbon materials.
We have been working with diverse materials and their applications in solar cells. So far,
we have demonstrated applications of CNTs as the transparent electrode, replacing ITO andmetal electrodes in SCs. This was done with the doping, which is mandatory to maximize theconductivity and transmittance. We investigated several types of dopants and methods
depending on the applications. ITO-free, CNT-based organic SCs showed a PCE of 6.04%
with the PTB7:PC71BM photoactive layer, in which MoOx thermal doping was used.[2] On
the other hand, metal-free window-like CNT-based organic SCs produced a PCE of 4.1%[3],because it was transparent solar cells, which could be used for window applications. For thisresearch, we used MoOx doping and HNO3 doping, separately. For the application inperovskite SCs, diluted HNO3 (35 v/v%)-doped CNT-based device produced the highest PCE
of 6.32% which was about 70% of the ITO-based device (9.05%).[4] This work opened up theresearch area of single-walled CNT applied SCs, as similar works have followed up, citing
our papers. Especially our first paper on CNT application in organic SCs[1] reached a citation
number of 16 in less than a year.
My next step of this research is to use both CNTs and graphene as the electrodes to achieve
full carbon SCs. This will be full-carbon SCs, which will again open up a new field of
research that many researchers around the globe will follow.
[1] M. Saliba et al. Energ. Environ. Sci. 9, 1989 (2016).
[2] I. Jeon, K. Cui, A. Anisimov, A. Nasibulin, E. I. Kauppinen, S. Maruyama, Y. Matsuo
J. Am. Chem. Soc. 137, 7982 (2015)[3] I. Jeon, C. Delacou, A. Kaskela, E. I. Kauppinen, S. Maruyama, Y. Matsuo
Scientific Reports, 2016 under revision[4] I. Jeon, T. Chiba, C. Delacou, Y. Guo, A. Kaskela, O. Reynaud, E. I. Kauppinen, S. Maruyama, Y. Matsuo
Nano Lett. 15, 6665 (2015)
Corresponding Author: I. Jeon
Tel: +81-3-5841-0978, Fax: +81-3-5841-0696,
E-mail: il.jeon@photon.u.s-tokyo.ac.jp- 11 -

1-4
Mechanically durable and stretchable micro-supercapacitors withelastomeric components harmonized with wearable field-effect transistorsżFumiaki Tanaka1, Atsuko Sekiguchi2, Karolina U. Laszczyk1, Kazufumi Kobashi2,
Shunsuke Sakurai2, Don N. Futaba2, Takeo Yamada2, Kenji Hata2
1

Technology Research Association for Single Wall Carbon Nanotubes (TASC), Tsukuba
305-8565, Japan
2
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565,
Japan

Flexibility or stretchability is one of the notable trends in recent electronics towards
wearable/implantable systems. Although many flexible/stretchable devices have been
proposed so far, mechanical durability is another essential aspect that wearable/implantabledevices should possess to keep device performances when exposed to various mechanicalstresses occurred in our daily lives.
Here, we developed mechanically durable and stretchable micro-supercapacitors composedof elastomeric materials towards elastomeric electronics possessing both mechanicaldurability and softness as a system rather than a single device. To this end, we usedsingle-walled carbon nanotubes (SWCNTs), rubber, composite of SWCNT and rubbers, andsulfuric acid electrolytes to make the micro-supercapacitors and demonstrated thatelastomeric field effect transistors (FETs) can be driven with them.㻌
The elastomeric micro-supercapacitors had high mechanical durability: the device
performances did not degrade even after the severe mechanical stresses including pressures up
to 6 MPa or by high-heels step and impact by being struck with a hammer. As well as themechanical durability, the micro-supercapacitor had stretchability up to 30% and higher
energy and power densities (e.g., 16.8 mWh/cm3 and 86.3 W/cm3, respectively, at a current
density of 19.2 A/cm3) compared to conventional stretchable supercapacitors. In addition, theelastomeric FETs had the same level of mechanical durability and stretchability.
In both devices, SWCNTs played important roles in mechanical strengths and device
performances. The usage of long and pure SWCNTs grown by super-growth method provided
a flexible and mechanically durable thin film, which also possessed high electric conductivity
and specific surface area, by entangling SWCNTs into deformable network structure. In
addition, when mixed with rubbers, the SWCNT network worked as good fillers for
conductivity and framework to support the structure of rubber matrix. As a result, SWCNT
thin films became good storages for electric double layers in micro-supercapacitors, while thecomposite of SWCNT and rubber became good electric conductors for current collectors inmicro-supercapacitors and electrodes in FETs.
To demonstrate the compatibility between elastomeric micro-supercapacitors and FETs asa system, they are connected with rubbery interconnection of SWCNT-rubber and then the
FET was driven by three micro-supercapacitors connected in series. The result clearly showedthat elastomeric materials can constitute an electronic system with micro-supercapacitors and
FETs beyond a single device.
Our elastomeric system opens up a possibility to realize all-elastomer-state electronics for
wearable/implantable systems, providing both softness for wear and mechanical durability for
tolerance against the severe mechanical stresses from the environment.
This presentation is based on results obtained from a project commissioned by the New
Energy and Industrial Technology Development Organization (NEDO).

- 12 -

1-5
Wafer-scale integration of suspended graphene nanoribbons
and its growth mechanisms○Hiroo Suzuki1, Toshiro Kaneko1, Yasushi Shibuta2, Munekazu Ohno3, Yuki Maekawa2, Toshiaki Kato1
1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Department of Materials Engineering, The University of Tokyo, Hongo 113-8656, Japan
3
Division of Materials Science and Engineering, Faculty of Engineering, Hokkaido University,
Sapporo, 060-8628, Japan
2

Graphene nanoribbons (GNRs) combine the unique electronic and spin properties ofgraphene with a transport gap that arises from quantum confinement and edge effects. This
makes them an attractive candidate material for the channels of next-generation transistors.
Although GNRs can be made in a variety of ways, the reliable site and alignment control of
GNRs with high on/off current ratios remains a challenge.
Up to now, we developed a novel method based on the advanced plasma CVD method [1]with nano scale Ni catalyst (Ni nanobar) for directly fabricating suspended GNRs devices [2].
However, the growth yield of suspended GNRs is low and understanding the growthmechanism is required to solve this problem.
Based on this background, we attempted to elucidate the growth dynamics of GNRs in our
method. Through the comparison of molecular dynamics simulation and phase diagram
calculation with the systematically obtained experimental results, it is found that the Ni
nanobar becomes liquid state during the high temperature condition (㹼900 Υ) and only theNi nanobar under plasma CVD can maintain its fine structure with liquid phase due to higher
carbon composition. Then, phase separation
between graphene and Ni happens during thecooling process, which accelerates the dewetting
and the destabilization of liquid phase Ni nanobar
under the GNR, resulting in the formation ofsuspended GNR (Fig. 1(a)). By following thisgrowth model, the yield of suspended GNR growth
can be drastically improved (㹼90%) and wafer
scale synthesis of 1,000,000 suspended GNRs has
been realized. The edge structure of GNRs was
also analyzed by polarized Raman measurements, Fig. 1: (a) Growth model of suspended GNR, (b)revealing near zigzag edge is dominantly formed optical microscope image, and (c) scanningmicroscope image of suspended GNRs
with high uniformity in our suspended GNR electron
array in wafer scale.
arrays.
[1] H. Suzuki, T. Kato and T. Kaneko, Plasma and Fusion Res. 9, 1206079 (2014).
[2] T. Kato and R. Hatakeyama, Nature Nanotechnology 7, 651 (2012).
[3] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa and T. Kato, Nature Communications 7, 11797(2016).
Corresponding Author: H. Suzuki
Tel: +81-22-795-7046
E-mail: suzuki12@ecei.tohoku.ac.jp- 13 -

1-6
Direct observations of graphene and its oxide dispersed in solution
Yutaka Matsuno, Yu-uya Sato, Hikaru Sato, ○Masahito Sano
Department of Organic Materials Sci., Yamagata University, Yonezawa 992-8510, Japan
A graphene sheet is only one atomic layer thick, yet over several microns wide. This 2D
morphology is a main reason that graphene is often placed on a solid substrate for fundamental
researches and applications, with a risk of unintentional mechanical strain and chemical doping.
Graphene oxide (GO) has many oxygen-containing functional groups, which enable GO to bereadily dispersible in various solvents. GO are often used in a form of dispersions for practicalapplications. Despite of its importance, there has been no practical technique to directly
visualize and characterize nanocarbons in liquid environments.
Recently, we have developed a new microscopy that allows direct observation of
nanocarbons in solution. In order to visualize atomically thin, 98% transparent graphene insolution, we need to have a very faint illumination compensating for “shooting against the lightsource”, additional contrast mechanisms besides the small absorption, and orientations facing
the wide surface toward an objective lens. These conditions are simultaneously satisfied bydispersing nanocarbons in a fluorescent dye solution near a solid surface. We use the dyefluorescence within a few hundred micrometers from the solid surface as an illumination.
A procedure is simple and quick. A nanocarbon solution is mixed with a dye solution, and isplaced on a glass surface. This cell is put on the microscope and an observation is started as if
using an ordinary optical microscope. Because the solution is open to the air, it is free tomanipulate or perform additional experiments on the solution while observing it in real time.
Sub-micron to sub-millimeter sized GO sheets executing 3D motions are imaged clearly insolution. There are several different mechanisms for contrast. Fluorescence quenching byDexter electron transfer or Förster resonance energy transfer (FRET) gives dark images. By
applying FRET, it is possible to image only an object which has absorbance at the emission
wavelengths of the dye. Even then, a large part of the illuminating light is still transmitted
through nanocarbons, allowing direct observation of layering and network structures.
Fluorophore properties of many dyes depend on local environments such as solvent, pH,
polarity, hydrophobicity, temperature, and concentration. We can create a situation where thedye fluorescence is retarded. If a nanocarbon recovers the fluorescence, it appears bright in a
dim background. We show an example of GO appearing bright as a result of adsorption andproton-exchange with dye molecules. Because graphene does not induce such changes, it ispossible to differentiate dark graphene frombright GO coexisting in the same solution.
As-synthesized GO itself fluoresces insolution. This autofluorescence can be used toimage GO without mixing dyes. A simultaneous
acquisition of fluorescence spectra is useful forstudying its mechanism. Finally, the viewing
object is not limited to nanocarbons. The same
contrast mechanisms apply also to various othersubstances, including living microorganisms.
Corresponding Author: M. Sano
Tel: +81-238-26-3072 E-mail: mass@yz.yamagata-u.ac.jp- 14 -

Fig. 1. Image of GO in aq. rhodamine b solution.

1-7
Visualization of structural modulation in the charge density wave phase of
1T-TaSe2 by scanning transmission electron microscopyżKeita Kobayashi1, Hidehiro Yasuda1,2
1Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1,
Mihogaoka, Ibaraki, Osaka 567-0047, Japan
2
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka
University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan
Some transition metal dichalcogenides (TMDCs) show a charge density wave (CDW)
phase transition due to their low-dimensional electron system [1]. In the CDW phase, thestructure of the TMDCs is modulated from that of the normal phase by the periodical
displacement of the transition metal atom positions. The formation of supercells in the CDW
phase of TMDCs due to the structural modulation has been observed by diffractometry, andmodels of the displacement of transition metal atoms by the CDW phase transition have been
based on these results [1]. To clarify the structural modulation of TMDCs by the CDW phasetransition, it is necessary to visualize the displacement of the transition metal atom positionsin the CDW phase transition in real space. This would also help clarify the waveform of the
CDW, the unique properties of the CDW phase of TMDCs, and the mechanism of the phasetransition.
In this study, to clarify the actual structuralmodulation of TMDCs by the CDW phase transition
by experimentally, we attempted to visualize theperiodic displacement of Ta atom position in CDW
phase of 1T-TaSe2, which is a typical TMDC thatshows a CDW phase at room temperature, byannular dark-field scanning transmission electron
microscopy (ADF-STEM). In consequence, we
found that the additional periodic image contrast,
which was consistent with the periodicity of thesupercell of the CDW phase of 1T-TaSe2, wassuperimposed on the image contrasts arising from
Fig.1: ADF-STEM images of 1T-TaSe2
acquired from the c-axis. A periodic
atomic columns in the ADF-STEM image of CDW
image contrast with six-fold symmetry
phase of 1T-TaSe2 (Figure 1) [2]. We comparedis seen in addition to the atomic
experimental and simulated images and found thatcolumns.
the periodic image contrast reflects the periodic
density fluctuations of Ta atomic columns caused by the static displacement of Ta atom
positions. The results confirm that the Ta displacement model predicted by the diffractometricmethod is correct. Furthermore, we reveal that the CDW has a unique waveform; a coherent
CDW is formed on every layer of 1T-TaSe2.
[1] J. A. Wilson, F. J. Di Salvo, S. Mahajan, Adv. Phys. 24, 117 (1975).
[2] K. Kobayashi, H. Yasuda, Submitted.
Corresponding Author: K. Kobayashi
Tel: +81-6-6879-7941, Fax: +81-6-6879-7942,
E-mail: kobayashi-z@uhvem.osaka-u.ac.jp- 15 -

1-8

Polarity control of h-BN nanoribbons by uniaxial strain○Ayaka Yamanaka, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba
305-8577, Japan
Hexagonal boron nitride (h-BN) is attracting much attention as an insulating version ofgraphene, due to its unique physical properties, such as mechanically strong hexagonal
network, high thermal conductivity, and an insulating electronic structure with wide band gap.
Because of these properties, h-BN is regarded as a potential material for the wide areas in thecurrent and future nanotechnologies. Although h-BN possesses the same network topology to
the graphene, their physical properties are totally different each other due to the difference inthe constituent elements. In our previous works, we demonstrated that the energetics andelectronic structure of nanoscale flakes of h-BN are insensitive to their shapes and sizes. On
the other hand, edge polarity of the h-BN nanoflakes is sensitive to the edge morphology andchemical functionalization. However, it is still unclear the detailed polar properties of theh-BN nanoflakes in terms of the structural deformations. Thus, in this work, we study theelectronic structure of h-BN with uniaxial strain to investigate the effect of strain topolarization of h-BN nanoribbons. All calculations are performed by using the density
functional theory (DFT) with the generalized gradient approximation. The effective screening
medium (ESM) method is applied to avoid the unintentional dipole interactions with theperiodic images.
In this study, we applied tensile and compressive strain parallel to the ribbon direction toh-BN nanoribbons with various edge structures ranging from armchair to zigzag. Figure 1
shows the potential difference between B and N edges of a zigzag h-BN nanoribbon as afunction of the strain. We found that the potential difference monotonically increases withincreasing the tensile strain and changes
its sign at 16 % (Fig. 1). The fact indicatesthat the ribbon under the 16% tensile strain
does not exhibit edge polarization, eventhoughtheasymmetricalatomicarrangements at the edges. Moreinterestingly, above the 16% strain, thepotential different changes its sign,
indicating that the polarity inversion
occurs in the uniaxially stretched h-BN
ribbons except the armchair ribbons.
Corresponding Author: A. Yamanaka
Tel: +81-29-853-5600 (ext. 8233),
Fax: +81-29-853-5924,
E-mail: ayamanaka@comas.frsc.tsukuba.ac.jp

Fig.1:- 16 -

Potential difference of zigzag h-BN
nanoribbon as a function of strain. Positive
and negative x-axis denote the tensile andcompressive strain, respectively.

1-9*HUPDQLXP6XOILGH3KRWRGHWHFWRUVZLWK+LJK3KRWRVHQVLWLYLW\DQG%URDG6SHFWUDO5HVSRQVHżDezhi Tan, Xiaofan Wang, Yuhei Miyauchi, Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

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[1] C. Liu, et al., Nat. Nanotechnol. 9, 273 (2015).
[2] H. Yuan, et al., Nat. Nanotechnol. 10, 707 (2015).
[3] D. Tan, et al., arXiv:1606.06953 (2016).
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
1
Graduate School of Advanced Integration Science, Chiba University,
Chiba 263-8522, Japan2
Department of Electrical Engineering, University at Buffalo, SUNY,
Buffalo, New York 14260-1920, USA
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1-11- 19 -

1-12
Host-Guest Complexation of Cyclodextrins on Carbon Nanohorn Particles○Koji Harano1, Junya Yamada1, Akihito Kumamoto2, Naoya Shibata2, Eiichi Nakamura1
1

2

Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
Institute of Engineering Innovation, Graduate School of Engineering, The University ofTokyo, Tokyo 113-8656, Japan

Dispersion of carbon nanomaterials in water is an important technique for enhancement of
their processability and medicinal applications. Whereas natural or synthetic surfactants havebeen widely employed for preparation of water-dispersible nanocarbons, the use of an excess
amount of surfactants and their removal by posttreatment are often problematic [1]. Herein wereport shape-selective complexation of cyclodexrin (CD), a common host compound for asmall hydrophobic molecule, on the surface of carbon nanohorn (CNH) particles throughhost-guest interaction at a molecular level. We found that CNH particles become dispersed bymixing and heating with cyclodextrins with various diameters (Figure). In contrast,
single-walled carbon nanotubes and graphite did not disperse in water by the same treatment,suggesting that the shape-selective interaction of CD molecules with the curved tips of CNH
plays a crucial role in formation of highly-dispersible CNH particles. The complexation of
CDs on carbon nanohorns was verified by high-resolution transmission electron microscopy(TEM, Figure), in which a trapezoidal contrast of a single cyclodextrin molecule was clearlyobserved. Such a shape-selective recognition of the nanocarbon surface allows us to separate
CNH particles from as-purchased mixture with graphitic particles by mixing with only a small
amount (1 wt%) of cyclodextrin, which was confirmed by thermogravimetric analysis andTEM observation.

1 wt% cyclodextrin (CD)HO

HR-TEM
O
OH
O n
OH

70 ℃, 24 h
1 nm

Carbon nanohorn(CNH) in water

CD/CNH
complex

Figure. Dispersion of CNH particles in water through host-guest complexation of cyclodextrin on the tips ofnanohorns. A high-resolution TEM image of γ-cyclodextrin on a nanohorn is shown on the right.

A part of this work was conducted in Research Hub for Advanced Nano Characterization,
The University of Tokyo, under the support of “Nanotechnology Platform” (project No.
12024046) by MEXT, Japan.
[1] M. Zhang et al. J. Phys. Chem. B 109, 22201 (2005).
Corresponding Author: E. Nakamura
Tel: +81-3-5841-4369, Fax: +81-3-5841-4369,
E-mail: harano@chem.s.u-tokyo.ac.jp- 20 -

1-13
Dependence of the resistivity of carbon nanocoils on coil diameter○Yoshiyuki Suda1, Yasushi Nakamura1, Tamio Iida2, Toru Harigai1, Hirofumi Takikawa1,
Hitoshi Ue3, Hiroyuki Shima4
1

Department of Electrical and Electronic Information Engineering, Toyohashi University ofTechnology, Toyohashi, Aichi 441-8580, Japan2
Department of Electrical and Computer Engineering, National Institute of Technology, Gifu
College, Motosu, Gifu 501-0495, Japan
3
Fuji Research Laboratory, Tokai Carbon Co., Ltd., Oyama, Shizuoka 410-1431, Japan
4
Department of Environmental Sciences, University of Yamanashi, Kofu, Yamanashi
400-8510, Japan
Carbon nanocoils (CNCs) are an exotic class of low dimensional nanocarbons with helicalshape. Typical thicknesses and coil diameters of CNCs fall within the ranges of 100–400 nm
and 400–1000 nm, respectively, and their full lengths are on the order of several tens of
micrometers [1]. We have developed a precise resistivity measurement system forquasi-one-dimensional nanomaterials using a focused ion beam [2]. The system enables theresistivity of CNCs to be measured and its dependence on coil geometry to be elucidated.
Low-temperature resistivity measurements performed on the CNCs revealed that electrontransport through the helical axis is governed by the variable range hopping mechanism. The
characteristic temperature in variable range hopping theory was found to systematicallyincrease with coil diameter, which supports our theory that the population of sp 2-domains in
CNCs decreases considerably with coil diameter.
CNCs samples were synthesized by catalytic chemical vapor deposition [1]. After thesynthesis, a portion of the CNCs was graphitized to obtain graphitized CNCs (G-CNCs) byheat treatment in Ar atmosphere at 2873K for 30 min using a Tammann oven. We then cut off
a single CNC from an as-grown aggregate and made the measurement sample using FIB
technique [2]. Figure 1 shows the relationshipbetween the coil diameter and resistivity at room
temperature: 15 single CNCs and three single
G-CNCs were examined. For reference, theresistivities of four single linear-shaped CNFs withfiber diameters of 407–1258 nm are also plotted on
the vertical axis. The resistivity of the CNCs wasfound to increase with their coil diameter, althoughcertain sample-dependent fluctuation was observed.
In contrast, the resistivity of G-CNCs was almost
invariant to changes in coil diameter. Electron
Fig.1: Relationship between resistivity
and coil diameter: 15 CNCs, threetransport through the helical axis will be discussed
G-CNCs, and four CNFs werein the presentation.
examined.

[1] Taiichiro Yonemura, et al., Carbon, 83 (2015) 183-187[2] Yasushi Nakamura, et al., Applied Physics Letters, 108(2016) 153108-1-4
Corresponding Author: Y. Suda
Tel: +81-532-44-6726, Fax: +81-532-44-6757,
E-mail: suda@ee.tut.ac.jp- 21 -

2-1
Doping and electronic properties of BN nanotubesżSusumu Saito1-3, Yoshitaka Fujimoto1
1

Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
2
International Research Center for Nanoscience and Quantum Physics,
Tokyo Institute of Technology, Tokyo 152-8551, Japan
3
Materials Research Center for Element Strategy, Tokyo Institute of Technology,
Yokohama, Kanagawa 226-8503, Japan
Bulk hexagonal boron nitride (h-BN) and h-BN atomic layers are structurally similar tographite and graphene respectively, but possess fundamental gap in their electronic structure
and are interesting future device materials. Although the doping into h-BN monolayer induces
rather deep donor and acceptor states, external strain is found to modify the electronic
structure and reduce the ionization energy of the impurity induced states [1]. Also theinterlayer interaction in the h-BN bilayer gives sizable reduction of the fundamental-gap value.
Here we study the electronic properties of BN nanotubes to clarify the curvature effect on theelectronic structure of h-BN layers.
We first review the electronic structure of the zigzag BN nanotubes studied in theframework of the density functional theory [2]. Their fundamental gap is found to decrease in
the case of thin nanotubes. We next discuss the electronic properties of thin BN nanotubes.
We study a series of zigzag nanotubes, armchair nanotubes, and finally the chiral nanotubes,
and show that the gap value depends not only on the diameter but also on the helicity of thenanotube [3]. Finally, we discuss the electronic properties of C doped zigzag BN nanotubes.
The C atom is doped at the B site of the nanotube and therefore induces the donor state. We
discuss the ionization energy of the donor state and its nanotube-radius dependence.

Density of states of BN nanotubes[1] Y. Fujimoto and S. Saito, Physical Review B 93, 045402 (2016).
[2] S. Okada, S. Saito, and A. Oshiyama, Physical Review B 65, 165410 (2002).
[3] M. Toyoda, Y. Uchida, and S. Saito, to be published.
Corresponding Author: Susumu Saito
E-mail: saito@stat.phys.ttiech.ac.jp
Fax: +81-3-5734-2739- 22 -

2-2
Chirality selective synthesis of single-walled carbon nanotubes with sputtered
Co-W catalyst and its possible mechanism○Hua An1, Rong Xiang1, Hiroki Takezaki1, Shinnosuke Ohyama1, Yang Qian1,

Taiki Inoue1, Shohei Chiashi1, Shigeo Maruyama1,2
1. Department of Mechanical Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo,113-8656, Japan
2. Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), 1-2-1 Namiki, Tsukuba, 305-8564, JapanThe excellent electrical properties have made single-walled carbon nanotubes (SWNTs) one of
the most of promising building blocks for future electronics and optics. However, the potential
industrial applications are impeded by the mixed chiralities of as-grown SWNT assemblies. Direct
synthesis of SWNTs with single chirality is challenging but always attracts considerable attention.
Recently, Co7W6 clusters were reported to structurally match and thus successfully growing asingle chirality SWNT (12, 6), with over 90% and a zigzag SWNT (16, 0), with near 80%, bycontrolling the catalyst structure and growth conditions with a high-temperature reduction andgrowth [1, 2].
In this report, we show that (12, 6) can be selectively grown at lower temperatures and with
better spatial uniformity by using a sputtered bimetallic Co-W in alcohol catalytic chemical vapor
deposition [3]. The enrichment of (12, 6) is 50-70% according to the statistical Raman mapping
analysis and optical absorption spectrum. Reduction temperature before growth is found to be
critical for the selectivity. At high reduction-temperatures, selective area electron diffraction
identified an intermediate structure of Co6W6C, which is associated with the selectivity [4]. The
details of catalyst structure, and time-dependent selectivity from 10 s to normally 5 min will be
discussed.
[1] F. Yang et al., Nature 510, 522 (2014).
[2] F. Yang et al., J. Am. Chem. Soc. 137, 8688 (2015).
[3] S. Maruyama et al., Chem. Phys. Lett. 360, 229 (2002).
[4] H. An et al., Nanoscale, (2016), in press, doi: 10.1039/C6NR02749K
Corresponding Author: Shigeo Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 23 -

2-3
Development of new polymeric gels for the M/S separation of
single-wall carbon nanotubesżGuowei Wang, Xiaojun Wei, Atsushi Hirano, Shunjiro Fujii,
Takeshi Tanaka, and Hiromichi Kataura㸨
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, JapanThe metal/semiconductor (M/S) or single-chirality separation of single-wall carbon
nanotubes (SWCNTs) is important for the electronic or biomedical applications. Among
various separation methods [1, 2], the gel column chromatography shows a great potential for
scalable production [3]. However, the available gels have been limited to agarose and allyl
dextran-based gels. The current gels are not optimized for the separation of SWCNTs and face
the problem of high cost. Moreover, two gels are far from enough for studying the
microscopic separation mechanism. Thus, more efforts are needed in developing newpolymeric gels.
In this study, we will introduce the latest results in finding novel polymeric gels that canbe used for the separation of SWCNTs.
Considering the current two gels arepolysaccharides, we focused our screening onpolysaccharide polymers. Several kinds ofwater
solublepolysaccharides
werecross-linked to get their corresponding gels.
The gels were proved to be effective for the
M/S separation Fig. 1 shows the opticalabsorption spectra of M- and S-SWCNTs thatwere separated by the newly developed guar
gum gel. In contrast, water insoluble
polysaccharides were examined to beineffective for the M/S separation. This
research reveals the importance of gel
wettabilities and provides us a general strategy
to modify water soluble polymers for M/S
Figure 1. Normalized optical absorption spectra
separation. The variety of the newly developedof pristine SWCNTs and separated M- andgels will contribute to both scientific
S-SWCNTs using a new guar gum gel.
researches and industrial applications.
This work was supported by JSPS
KAKENHI, grant no. 25220602.
[1] C. Y. Khripin et al. J. Am. Chem. Soc. 135, 6822-6825 (2013).
[2] S. Ghosh et al. Nat. Nanotechnol. 5, 443-450 (2010).
[3] H. Liu et al. Nat. Commun 2, 309 (2011).
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-29-861-2786, E-mail: h-kataura@aist.go.jp- 24 -

2-4
Utilizing a caged electron spin of an endohedral metallofullerene formolecular location sensing○Yuta Takano1, Ryo Tashita2, Mitsuaki Suzuki2,3,4, Shigeru Nagase5, Hiroshi Imahori1,6,
Takeshi Akasaka2,3,7,8
1

Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Kyoto 6068501, Japan. 2Life Science Center of Tsukuba Advanced Research Alliance, University ofTsukuba, Ibaraki 305-8577, Japan. 3Department of Chemistry, Tokyo Gakugei University,
Tokyo 184-8501, Japan. 4Department of Chemistry, Josai University, Saitama 350-0295,
Japan. 5Fukui Institute for Fundamental Chemistry, Kyoto University, Kyoto 606-8103,
Japan. 6Department of Molecular Engineering, Graduate School of Engineering, Kyoto
University, Kyoto 615-8510, Japan. 7Foundation for Advancement of International Science,
Ibaraki 305-0821, Japan. 8 State Key Laboratory of Materials Processing and Die & Mould
Technology, School of Materials Science and Technology, Huazhong University of Scienceand Technology, Wuhan 430074, China.

Location recognition in molecular-scale provides valuable information on positional
relationship, absolute conformation and dynamics of molecules. This information is critical toelucidating biological processes and understanding the nature of functional molecular materials.
Endohedral metallofullerenes are promising nano-materials including that for spatial
location recognition [1], because the caged metal is uniquely isolated from the outerenvironment and rarely escapes from the fullerene cage even in extreme conditions, such as
strongly acidic media and high temperature. Such stability makes them the preferred molecular
probes in a variety of materials ranging from biological systems to industrial chemicals.
In this study, we present a novel molecular location sensing approach based on an endohedral
metallofullerene, Ce@C82, using its anisotropic magnetic properties which lead to temperaturedependent paramagnetic shifts in 1HNMR spectra [2] (Fig.1). To achieve this concept, five siteisomers of Ce@C82CH2-3,5-C6H3Me2 (1a-e) were chemically synthesized by a radical coupling
reaction [3]. The temperature-dependent shifts, which are induced by the magnetic anisotropyof the caged Ce, in 1H-NMR spectra of the isomers were clearly characterized by means ofexperimental molecular structural analysis and theoretical calculations using density functional
theory. Detailed numerical analysis of the shifts using suitable statistic criteria successfully
located the relative position of the nearby hydrogen atoms from the inside Ce atom. These
results evidenced that the paramagnetic shifts based on the anisotropic magnetism of theencapsulated metal atom can be used for molecular location recognition.

Fig. 1 Schemes for (left) synthesizing Ce@C82CH2C6H3Me2 and (right) location sensing by the fullerene.
References: [1] For a review; M. Yamada et al., Bull. Chem. Soc. Jpn., 2014, 87, 1289. [2] Y. Takano et al., J. Am.
Chem. Soc., 2016, 138, 8000. [3] Y. Takano et al., J. Am. Chem. Soc., 2008, 130, 16224.
Corresponding Author: Yuta Takano
Tel: +81-75-383-2494, Fax: +81-75-383-2571, E-mail: ytakano@icems.kyoto-u.ac.jp- 25 -

2-5
Evaluation of Enantiomeric Purity of Single-Wall Carbon Nanotubes
using Flavin Mononucleotide○Xiaojun Wei1, Yohei Yomogida1, Atsushi Hirano1, Shunjiro Fujii1,
Takeshi Tanaka1, Naomichi Sato2, Riichiro Saito2, and Hiromichi Kataura1
1

Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan2
Department of Physics, Tohoku University, Sendai 980-8578, Japan

Recently, we separated 12 (n,m) enantiomers of single-wall carbon nanotubes (SWCNTs)[1], which showed two times higher circular dichroism (CD) intensities than the reported
value in the previous work [2]. However, we could not estimate the enantiomeric purity (EP)of SWCNTs because the available evaluation method was not reported to date.
In this study, we report an available
evaluation for the EP of (6,5) SWCNTs
using chiral flavin mononucleotide(FMN) [3] for the first time. Two (6,5)
enantiomers (defined as (+) with anegative E22 CD signal and (–) with apositive one), which were separated bygel chromatography, were dispersed in
FMN solution after removing theinitial dispersant. Figure 1 shows the
Figure 1. Optical absorption spectra (left) and PL
opticalabsorption
spectraandexcitation-emission maps (right) of (+)- and (–)-(6,5)
photoluminescence (PL) excitationSWCNTs dispersed in FMN solution.
emission maps of (+)- and (–)-(6,5)
SWCNTs dispersed in FMN solution.
Difference in E11 wavelength between (+)- and (–)-(6,5) was clearly observed. This isprobably attributed to the non-equivalent local environments induced by the chiral FMN
which possessed unequal affinities for (+)- and (–)-(6,5) SWCNTs. This difference enables us
to distinguish (+)- and (–)-compositions contained in enantiomeric mixture. By a conventional
peak decomposition procedure, the EP of (6,5) SWCNTs was successfully estimated based on
the integrated intensities of the fitted E11 optical absorption peaks of (+)- and(–)-compositions (78% and 75% for (+)- and (–)-(6,5) samples, respectively, shown in Figure1). Furthermore, we confirmed that the estimated EP is proportional to the CD intensity,
which allows us to estimate the EP of (6,5) SWCNTs simply from the CD intensity. Because
we know that CD intensity depends on the diameter of SWCNT and wavelength of theincident light, we can try to estimate the EP of the other chiral (n,m) SWCNTs using present
result for (6,5).
This work was supported by KAKENHI No. 25220602.
[1] X. Wei et al. 49th FNTG Symposium 2-5, p28 (2015)., X. Wei et al. (2016) submitted.
[2] S. Ghosh et al. Nat. Nanotechnol. 5, 443-450 (2010).
[3] S. Ju et al. J. Am. Chem. Soc. 134, 13196-13199 (2012).
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-29-861-2786, E-mail: h-kataura@aist.go.jp- 26 -

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2-7
Hydrogenation properties of supported metal nanoparticles on grapheneżShigehito Isobe 1, Kengo Omori 1, Satoshi Yasuda2
1

Graduate school of Engineering, Hokkaido University, Sapporo 060-8628, Japan2
Department of Chemistry, Hokkaido University, Sapporo 060-0810, Japan

We have reported that Fe nanoparticles on graphene can absorb hydrogen at low temperature bydensity functional theory (DFT) calculation [1]. In this work, we have experimentally investigated thehydrogenation properties of metal nanoparticles of Fe, Ni, Cu and Au on graphene. The metal
nanoparticles were evaporated on single layer graphene on Cu substrate by vacuum evaporation
method. The samples were hydrogenated under 1.0 MPa of H2, for 10 min, at -196 °C, 100㻌 °C, anddehydrogenated from R.T. to 400 °C and analyzed using mass spectrometer (MS). The hydrogen
desorption was observed around 1600 °C for Fe, around 150 °C for Ti, and not observed for Au.
Observed hydrogen desorption was caused by metal nanoparticles because we could not observedhydrogen desorption when we performed same experiment to graphene on Cu substrate.

Intensity / a.u.

Fe

10 nm

Fe/G
Au/G
Cu/G
Ni/G
100

200

300

Temperature
Temperature / oC / oC

Figure
TEM image of Fe nanoparticles on graphene (left)

Hydrogen MS profiles of each Fe, Au, Cu and Ni nanoparticles on graphene (right)[1] K. Takahashi et al., Low temperature hydrogenation of iron nanoparticles on graphene, Scientificreports, 4: 4958 (2014)
Corresponding Author: S. Isobe
Tel: +81-11-706-6771, E-mail:isobe@eng.hokudai.ac.jp- 28 -

400

2-8
Metal Phthalocyanine/Reduced Graphene Oxide HybridElectrocatalyst for cathodic Oxygen Reduction Reaction
Shinichi Murakami1, Michio Koinuma1, Yasumichi Matsumoto1
1

Graduate School of Science and Technology, Kumamoto University
2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan  

Pt/C is the best electrocatalyst for cathodic oxygen reduction reaction (ORR) in fuel cells
and metal-air batteries. However, high cost and limited reserve will be problem in the mass
production. Therefore, development of highly efficient and stable Pt-free electrocatalyst isrequired. MPcs exhibit positive charge and have attracted a great deal of attention for a wide
variety of applications owing to their versatile functional properties, which depend on thecentral metal ion. We proved that an iron phthalocyanine (FePc)-based catalyst exhibits highactivity for ORR at an alkaline condition[1]. GO exhibit negative charge and have electric
insulation owing large amount of oxygen functional groups, while removal of these groups bya reduction process. Reduction changes insulating GO into conductive rGO that havegraphene-like sp2 domains. In this work, presents the electrocatalytic activity for ORR of
MPcs/GO hybrid catalyst.
GO was prepared by Hummers’ method. A GO dispersed (0.5 g L-1) in
N,N-dimethylformamide. A solution of MPcs (0.5 g L-1) was prepared by adding FePc
powder to chloroform and subjecting the resulting mixture to ultrasonic treatment for 30 min.
The mixed solutions were dipped on glassy carbon electrode, and vacuum drying. Then, theMPcs/GO/GC electrodes were reduced for 10 min at -1.1 V (vs. Ag/AgCl) in 0.1 M Na2SO4.
Samples were tested as electrodes for the ORR in 0.1 M KOH saturated with O2. Pt wire and
Ag/AgCl electrodes were used as the counter and reference electrodes, respectively.
The CV results (Fig.1) shows that the FePc/rGO hybrid offered a higher peak reduction
potential than 20 wt% Pt/C. Moreover, the onset potential of FePcOC6H6/rGO andFePcOCH3/rGO were observed at +0.06 V and +0.02V (vs Ag/AgCl), respectively. These
results suggested that FePcOC6H6/rGO and FePcOCH3/rGO indicated high ORR catalytic
activity in alkaline electrolyte. XPS results showed that most of Fe where complex were
central metal was left in FePcOC6H6/rGO
and FePcOCH3/rGO by electrochemical
reduction of the samples. Furthermore, Fe in
the FePcOC6H6/rGO and FePcOCH3/rGO
was confirmed that the Fe2+is dominant.
  
However, this problem need more    investigation and is still open to discuss.
  
Funding and sample offer form ADEKA   
corporation are gratefully acknowledged.
  
 



 



[1]T. Taniguchi et al. Part. Part. Syst. Charact. 30,
1063 (2013).

 

 

 





     

Fig.1: CV results in O2-saturated 0.1 M KOH.
Corresponding Author: S. Murakami
Tel: +81-96-342-3659, Fax: +81-96-342-3679,
E-mail: 157d8344@st.kumamoto-u.ac.jp- 29 -



2-9
Oxygen reduction reaction catalyzed by copper-incorporated carbon
electrocatalysts○Masaru Kato1,2, Marika Muto2, Ichizo Yagi1,2
1

2

Faculty of Environmental Earth Science, Hokkaido University, Sapporo 060-0810, Japan
Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810, Japan

Oxygen reduction reaction (ORR) is a key reaction in energy conversion devices such as
polymer electrolyte fuel cells (PEFCs). In PEFCs, platinum group metals (PGMs) are widelyused as cathode materials to electrochemically catalyze the ORR. PGMs, however, are rareand expensive, and should be replaced by non-PGM electrocatalysts for the widespreadcommercialization of PEFCs. Intensive efforts have been devoted to developing non-PGM
ORR electrocatalysts such as Fe- and Co-based electrocatalysts and one of the promisingsynthetic approaches to them is pyrolysis of metal, nitrogen and carbon precursors.[1,2]Compared with Fe- and Co-based electrocatalysts, much less Cu-based electrocatalysts havebeen reported,[3–5] even though an enzyme of Laccase efficiently catalyzes the ORR at theactive center of a trinuclear copper complex.[6]Herein we report synthesis, characterization and ORR catalytic activity of a Cu,N-codopedcarbon electrocatalyst (r[Cutrz/GO]) synthesized in pyrolysis from a trinuclear copper
complex with a nitrogen-rich ligand of 1,2,4-triazole (Cutrz)[7] as the metal and nitrogensource and graphene oxide (GO) as an carbon source (Fig. 1). Cutrz, which has a trinuclear
metal core, was inspired by the catalytic active site of Laccase. We used GO because we
expected that the heating treatment reduced GO involving incorporation of copper active sites
into conductive carbon sheets.[1,8]Linear sweep voltammetry of r[Cutrz/GO]
recorded in a pH range from pH 1 to pH 13 underoxygen revealed that the ORR activity ofr[Cutrz/GO] increased with increasing pH and theactivity at pH 13 was higher than that of Pt/C.
Physical chemical measurements including X-ray
photoelectron spectroscopy and X-ray absorption
fine structure spectroscopy demonstrated that thepyrolysis process involved not only the reduction ofgraphene oxide but also incorporation of unsaturated
copper cores into sp2 carbon networks.

Fig.1:
Syntheticr[Cutrz/GO]

procedureof[1] M. Lefèvre et al., Science. 324, 71 (2009). [2] G. Wu, K.L. More, C.M. Johnston, P. Zelenay, Science. 332,
443 (2011). [3] M.S. Thorum, J. Yadav, A.A. Gewirth, Angew. Chem. Int. Ed. 48, 165 (2009). [4] M. Kato et al.,J. Phys. Chem. C., in press. DOI: 10.1021/acs.jpcc.5b11663. [5] M. Kato et al., Phys. Chem. Chem. Phys. 17,8638 (2015). [6] N. Mano, V. Soukharev, A. Heller, J. Phys. Chem. B. 110, 11180 (2006). [7] T. Yamada, G.
Maruta, S. Takeda, Chem. Commun. 47, 653 (2011). [8] K. Kamiya, K. Hashimoto, S. Nakanishi, Chem.
Commun. 48, 10213 (2012).
Corresponding Authors: M. Kato and I. Yagi
Tel: +81-11-706-2276, Fax: +81-11-706-4529,
E-mails: masaru.kato@ees.hokudai.ac.jp (MK); iyagi@ees.hokudai.ac.jp (IY)- 30 -

2-10
Novel Proton/Electron Mixed Conductor using Graphene OxideżKazuto Hatakeyama1, Michio Koinuma1, Tetsuya Kida1, Shinya Hayami1,
Yasumichi Matsumoto1
1

Graduate School of Science and Technology, Kumamoto University
2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan

Proton/electron mixed conductors with high electrical and protonic conductivities enablevarious applications such as fuel cells, supercapacitors and gas separation membranes.
Perovskite-type oxides such as BaCeO3, LaYbO3 and La6WO12 are most commonly used as
mixed conductors. However, these materials only act at higher temperatures (> 650 oC). To
overcome these problems, heterogeneous mixtures of electron and proton conductors havebeen reported to produce mixed conductors that function at room temperature. A Nafion based
membrane hybridized with carbon showed proton and electron conductivities of ~10-6-10-4 S
cm-1 and ~10-3 S cm-1, respectively, at room temperature. However, in such heterogeneousmixed conductors, carrier transport is limited by phase boundaries, making it substantiallydifficult to obtain high mixed conductivities. Thus, it is desirable to develop single phasemixed conducting materials where diffusion paths of charged carriers are interconnected in
the molecular scale.
Graphene oxide (GO), the oxidized form of graphene, shows high proton conductivity
becaus of its large amount of oxygen functional groups. While it is well-known that reduced
GO (r-GO) acts a good electron conductor becaous its sp2 domains gradually expand by
reduction process. Herein, we demonstrate the successful control of the proton and electron
conductivities of GO using the photoirradiation and thermal reduction processes [1]. The
proton conductivity decreased when the layer distance decreased, whereas the electron
conductivity drastically increased with decreasing oxygen content. We also discovered thatphoto or thermally reduced r-GO films act as a good proton/electron mixed conductor at room
temperature. In this case, electrons transfer through r-GO planes, while protons diffuse into
the interlayer (Fig. 1). This single phase mixed conductor showed both the proton andelectron conductivities of ~10-4 S cm-1 under highhumidity conditions. Moreover, we were successful toincrease these conductivities ~2-3 order magnitudes
by introducing sulfate ions into r-GO interlayers [2].
Among mixed conductors reported, the developedr-GO films exhibited the best performance at room
temperature, demonstrating their feasibility forvarious applications such as fuel cells, Fig. 1 Schematic model ofsupercapacitors and gas separation membranes.
electron and proton mixed[1] K. Hatakeyama et al. Chem. Mater. 26, 5598 (2014).
[2] K. Hatakeyama et al. J. Mater. Chem. A 3, 20892 (2015).
Corresponding Author: K. Hatakeyama
Tel: +81-96-342-3659, Fax: +81-96-342-3679,
E-mail: kazuto@kumamoto-u.ac.jp- 31 -

conduction in r-GO film.

2-11
Threshold shift of diamond electrolyte-solution gate field-effect transistor
by anodic oxidationżMasafumi Inaba1, Keisuke Igarashi1, Takuro Naramura1, Shuhei Abe1, Masanobu Shibata1,
Yukihiro Shintani2, Atsushi Hiraiwa1, Hiroshi Kawarada1
1
Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 1698555, Japan
2
Yokogawa Electric Corp., Tokyo 180-8750, Japan()

IDS (ȝA)Diamond surface has wide potential window and is biocompatible, it is useful for bio- andchemical- sensing. We have investigated the electrolyte-solution gate field-effect transistors(SGFETs) with diamond channel[1]. Hydrogen terminated (C-H) diamond surface have twodimensional hole gas layer (2DHG) due to the dipole of surface C-H bond, where H is slight
positive. Hole carriers are induced by surface negative charges in electrolyte solution acrosselectric double layer (EDL) on the surface. To form EDL on diamond surface, negative bias
over threshold voltage is necessary. When the surface
G: Reference electrodeis partially oxidized, threshold voltage should shift toElectrolyte solution
negative because the surface potential shifted toDSnegative. In this study, we investigated the threshold
shift by anodic oxidation of diamond surface[2]. This Poly crystalline diamondprocess might be useful for controlling the device
C-H diamond channel
parameter of nanocarbon FET-type sensors.
Fig. 1. Schematic image of diamond SGFET
Fig. 1 shows the schematic image of the SGFET-300
VGS = -1 V
on diamond. Initially, the channel was terminated byhydrogen, and source and drain electrodes (Ti/Au)-0.8 V-200
were passivated by epoxy resin. Here, C-H diamondchannel is directly contact to solution, and the surface
EDL works as gate dielectric. Gate bias was applied-0.6 V-100
from the reference electrode. We used phosphorus-0.4 Vbuffer solution (PBS) as electrolyte solution. Fig. 2-0.2
Vshows the typical IDS-VDS characteristics. Good00V
modulation was observed. Anodic oxidation was
0.0
-0.5
-1.0
performed by applying positive bias to source andV(V)DSdrain. Fig. 3 shows the ඥ‫ܫ‬஽ௌ -VGS characteristics by
Fig. 2. Typical IDS-VDS characteristics of C-Hchanging applied voltage for anodic oxidation. As the diamond SGFET
applied voltage increased over 1.1 V, the threshold
㽢10-3
0 V(initial)
20
shifted to negative. By anodic oxidation, surface C-H
VDS = -1 V
was partially oxidized and the intensity of C-O or
C=O bond increased in X-ray photospectroscopy
15(XPS). The detail oxidation mechanism will beshown on site.
10[1] A.R. Ruslinda, H. Kawarada et al., J. Electrochem. Soc. 159,
J182 (2012).
5[2] T.N. Rao and A. Fujishima, Diam. Relat. Mater. 9, 384(2000).
0
Corresponding Author: M. Inaba
0.0
-0.5
-1.0
Tel&Fax: +81-3-5286-3391
VGS (V)E-mail: inaba-ma@ruri.waseda.jp
Fig. 3. ඥ‫ܫ‬஽ௌ -VGS characteristics by changing
anodization voltage- 32 -

3-1
Optical Properties of Oxidized (6,5) Single-Wall Carbon Nanotubes○Mari Ohfuchi1, Yoshiyuki Miyamoto2
1

Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan
Research Center for Computational Design of Advanced Functional Materials, National
Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
2

Optical properties of oxidized single-wall carbon nanotubes (SWCNTs) have attracted
much attention because of the greater luminescence quantum yield than that of pristine CNTs.
To advance the fundamental understanding of the optical properties of oxidized SWCNTs, wetheoretically investigated the energetics and the optical transitions for complex oxygen (O)adsorption structures on (6,5) CNTs, including adsorption of two O atoms.
As shown in Fig. 1, we obtained four groups of optical transition levels below E11 for CNTs
adsorbed by isolated O atoms, including the levels known as E11* and E11*−. The most stableO-adsorption structure is ether structure, which corresponds to the E11* level. The epoxy
structure that produces the E11*− level is much more exothermic than the ether structure. We
found two additional groups of optical transition levels for adsorption structures of two O
atoms. The most stable adsorption structure for two O atoms is two parallel ether structures,
whose transition energy appear between E11* and E11*−, and more endothermic than two
isolated ether structures. The second most stable structure is neighboring ether and epoxy
structures, whose O-adsorption energy is also much stronger than the sum of those of isolated
ether and epoxy structures. The transition energy is only 0.02eV lower than the E11*− levelthat is produced by the isolated epoxy structure. There are no dark states below the level,
which would work as intrinsic non-radiative
decay paths and reduce the luminescencequantum yield.
These results explain the recent bioimaging
experiments where the E11*− emission increases
its intensity with respect to E11* as theultraviolet/ozone irradiation time increases [1]. It
also seems that we well understand the multiple
emission peaks in the low-temperature PL
measurements of SWCNTs oxidized by O3 [2]and those in the PL spectra of SWCNTs oxidized
by O2 molecules during single chirality
separation processes [3], by taking adsorption
structures of two O atoms into consideration.
This comprehensive understanding isessential for further applications of oxidized
SWCNTs.
[1] Y. Iizumi et al., The 50th FNTG General Symposium,
1-10 (2016).
[2] X. Ma et al., ACS Nano 8, 10782 (2014).
[3] X. Wei et al., J. Phys. Chem. C 120, 10705 (2016).
Corresponding Author: M. Ohfuchi
E-mail: mari.ohfuti@jp.fujitsu.com- 33 -

Fig.1: Optical transitions for (6,5) CNTs adsorbed
by one O atom (lower panel) or two O atoms(upper panel). The oscillator strengths are plottedwith 5-meV width around the transition energies.
The insets are the schematic diagrams for the
related O-adsorption structures. The gray sticks
and black spheres represent CѸC bonds and O
atoms, respectively.

3-2Graphene coated silver substrate for SERS with acid toleranceżSeiya Suzuki, Masamichi Yoshimura
Graduate School of Engineering, Toyota Technological Institute, Nagoya 468-8511, Japan
Surface enhanced Raman scattering (SERS) technique is a novel method to sense
molecular and lattice vibrations. Although nanostructured silver (Ag) surface provides themost intense SER signals [1], the use of the Ag surface is limited under acidic environment
which dissolves Ag. Graphene, a single atomic carbon layer, has a prominent stability forchemical agent, and its honeycomb lattice completely prevents the penetration of small
molecules like hydrogen and water [2]. Here, we report development of the SERS substrateconsisting of nanostructured Ag and millimeter-scale single-crystal graphene (gSERS). The
durability of the gSERS substrate for acidic conditions was demonstrated.
The gSERS substrate was prepared on a SiO2 (300 nm)/Si substrate. A 6 nm thick Ag was
deposited by sputtering on the SiO2/Si, and then millimeter-scale single-crystal graphene, asgrown by chemical vapor deposition [3], was transferred onto the substrate by wet transfer.
Figure 1 shows Raman spectra of Ag/SiO2/Si, graphene/SiO2/Si, and graphene/Ag/SiO2/Si(gSERS) substrates in air. The sputtered Ag showed strong Raman peaks of adventitious
carbon, indicating SERS. While graphene/SiO2/Si shows small G and G’ peaks, the gSERS
substrate showed strong peaks, indicating SERS.
Subsequently, the SERS substrate was embedded in hydrochloric acid (0.1 ~ 1×10-4 M) to
test the durability for acid. Then, rhodamine 6G (R6G) in aqueous solution was dropped on
the substrate, and was dried in air. Figure 2(a) shows an optical microscope image of thesubstrate surface where hexagonal graphene is visible (guided by broken lines). Figure 2(b)shows a Raman mapping of R6G peak (~1650 cm-1) overlapped on the optical image taken ataround the upper left corner of the hexagonal graphene. Figure 2(c) indicates Raman spectra
taken at the circles in Fig. 2(b). The Raman spectra at the bright spots on graphene (Fig. 2(b))
show strong R6G peaks like the spectrum 1 in Fig. 2(c), indicating hot spots of SERS. R6G
peaks can also be observed on the inside of the graphene domain (spectrum 2 in Fig. 2(c)) but
not on the outside (spectrum 3). This indicates that nanostructured Ag on the inside (outside)of the graphene has (not) existed under hydrochloric acid, indicating gSERS substrate can beused in acid environment. We expect that the present advanced technique will further enhance
the potential of SERS applications.
/ŶƚĞŶƐŝƚǇ;Ă͘Ƶ͘Ϳ

6L26LD

G’G
x2 Graphene/Ag/SiO2

3

6L26L
Graphene

x30 Graphene/SiO2

(c)

(b)

m
1.36 mGraphene2

6L26L

Map

1
2
3ϭϯϬϬ ϭϰϬϬ ϭϱϬϬ ϭϲϬϬ ϭϳϬϬZĂŵĂŶƐŚŝĨƚ;ĐŵͲϭͿϭϱϬϬ ϭϴϬϬ ϮϭϬϬ ϮϰϬϬ ϮϳϬϬͲϭZĂŵĂŶƐŚŝĨƚ;Đŵ Ϳ

Fig. 1. Comparison of Raman spectrawith laser wavelength of 532 nm.

1/ŶƚĞŶƐŝƚǇ;Ă͘Ƶ͘Ϳ

(a)Ag
x1 Ag/SiO2

Fig. 2. (a) Optical microscope image of the SERS substrate.
(b) Raman mapping of R6G and (c) Raman spectra in (b).

[1] K. Kneipp et al., “Surface-Enhanced Raman Scattering”, Springer (2006).
[2] S. C. O’Hern et al., Nano Lett. 14, 1234 (2014).
[3] S. Suzuki et al., e-J. Surf. Sci. Nanotech. 13, 404 (2015).
Corresponding Author: Seiya Suzuki
Tel: +81-52-809-1852, E-mail: seiya09417@gmail.com- 34 -

3-3
A nanoporous graphene terahertz detector○Juxian Li1, Daichi Suzuki1, Shunri Oda1, Yoshikazu Ito2, Takeshi Fujita2, Yukio Kawano1
1

2

QNERC and Dept. of EE, Tokyo Institute of Technology, Tokyo 152-8552, JapanWPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Terahertz (THz) wave is an electromagnetic wave having a wavelength of around several
hundreds micrometers and is promising for various fields such as medical and security
imaging, astronomy, agriculture, etc [1]. However it is difficult to detect THz wave because of
its low photon energy. Here, we developed a THz detector based on a novel nanocarbon
material, nanoporous graphene, and achieved highly sensitive and high speed THz detection
operating in room temperature.
Nanoporous graphene is synthesized by a new chemical vapor deposition process in which
single layers or a few layers graphene grow on a cheese-like nickel template full filled withporous of various size [2]. This material possesses the characteristic of single layer graphene,
and at the same time has a 3D configuration, which means the mechanical strength is enoughto accomplish bulk application of marvel character of graphene without substrate such asbroadband light absorption spectrum and Dirac cone energy dispersion [2]. Differently fromsingle layer graphene, the nanoporous graphene has broadband absorption spectrum withabsorption rate over 90%, covering even THz range. It also has large Seebeck coefficientmaking it possible to convert thermal energy, obtained from THz radiation, into electricalsignal.
We have fabricated a device by a pristine nanoporous graphene sample with averaged
porous size around 100-300 nm. As shown in Fig.1, the THz response of this device wasobserved even without external electric field. This device has an advantage that the
fabrication does not need complicated semiconductor fine process.
Because of the high thermal conductivity andthe low specific heat [3], which determine thetransient speed of thermal energy, our detector
speed is relatively fast even for the detection
mechanism based on thermoelectric effect.
For further improvement we are making a PN
junction device.
This work was supported in part by the Japan Science andTechnology Agency, MEXT/JSPS KAKENHI Grant
Numbers JP26286005, JP16H00798, JP16H00906, andSupport for Tokyotech Advanced Researchers (STAR).
[1] Y. Kawano, Contemporary Physics. 54, 143 (2013).
[2] Y. Ito, et al. Angew. Chem. 53, 4822 (2014).
[3] Y. Ito, et al. Adv. Mater. 27, 4302(2015).
Corresponding Author: Y. Kawano
Tel: +81-3-5734-3811, Fax: +81-3-5734-3811,
E-mail: kawano@pe.titech.ac.jp
Fig.1: Device Structure and THz response.

- 35 -

3-4
Synthesis and Photophysical Properties of Chemically Converted
Graphene–Pyrene Linked Systems○Tomokazu Umeyama1, Jinseok Baek1, Junya Mihara1, Hiroshi Imahori1,2
12

Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 615-8510, Japan

In this study, pyrene dimer and monomer are covalently linked onto the chemicallyconverted graphene (CCG) to investigate the dimerization effect on the optical andphotophysical properties of the pyrene–graphene covalently linked systems. Formationofdimeric
andmonomeric pyrenes standing on sp2
carbon network of graphene has beenachieved by one- and two-step methods
asrecently
conducted
using
single-walledcarbonnanotubes(SWNTs).[1] As illustrated in Fig. 1(upper), dimeric pyrenes were attachedto CCG by one-step method, i.e., direct
additionreactionof4-(1-pyrenyl)phenyl (PP) radical onto
thegraphene
plane
of
CCG
(Py-1-CCG). We also synthesized Fig. 1 Synthesis of Py-1-CCG and Py-2-CCG.
monomericpyreneson
CCG
selectively by the stepwise additions consisting of the first addition of the iodinephenyl (PhI)
radical onto CCG to yield the PhI-functionalized CCG (PhI-CCG), followed by the second
Suzuki coupling between PhI-CCG and pyrene boronic ester (Py-2-CCG) (Fig. 1, lower). The
low yield (ca. 15%) of the Suzuki coupling reaction rendered the PP groups monomeric in
Py-2-CCG, even if the PhI groups in PhI-CCG formed paired structures on CCG.
The dimeric and monomeric structures on CCG in Py-1-CCG and Py-2-CCG, respectively,
were substantiated by UV-vis absorption measurements. The spectrum of Py-2-CCG consistsof those of PhI-CCG and Py-ref (1-phenylpyrene), i.e., a pyrene π−π* band at 350 nm inaddition to the broad structureless absorption of CCG extending to the near-infrared (NIR)
region. This is consistent with the presence of the monomeric pyrenes on CCG in Py-2-CCG.
In contrast, the spectrum of Py-1-CCG shows a new band at 450 nm. This emerging shoulder
can be rationalized by the dimeric interaction between the pyrene rings in Py-1-CCG. 
Upon excitation of Py-1-CCG and Py-2-CCG at 350 nm, where the absorbance of thepyrene moiety was adjusted to be identical to that of Py-ref, the fluorescence from pyrene
moieties on CCG was quenched nearly quantitatively in comparison with Py-ref. This result
implies that the pyrene excited states are quenched efficiently by CCG. In the presentation,
we will show the results of transient absorption measurements to discuss the pyrene
dimerization effect on the interaction between pyrene and CCG in the excited states in detail.
[1] T. Umeyama, J. Baek, Y. Sato, K. Suenaga, F. Abou-Chahine, N. V. Tkachenko, H. Lemmetyinen and H.
Imahori, Nat. Commun. 6, 7732 (2015)
Corresponding Author: T. Umeyama
Tel: +81-75-383-2568, Fax: +81-75-383-2571, E-mail: umeyama@scl.kyoto-u.ac.jp- 36 -

3-5
Diazonium Chemistry for Tunable Grafting and Nanomanipulation
John Greenwood2, Tomoko Inose1, Yasuhiko Fujita2, Oleksandr Ivasenko2, Yoshito Tobe3,
Steven De Feyter2, ○Hiroshi Uji-i1,2
1

RIES, Hokkaido University, Sapporo 001-0020, Japan
Department of Chemistry, KU Leuven-University of Leuven, Leuven 3001, Belgium
3
Division of Frontier Materials Science, Osaka University, Osaka 560-8531, Japan

2

Graphene, a single atom thick sheet of sp2 hybridized carbon, is the focus of intense
research efforts because of its unique electronic, optical, mechanical, and thermal
characteristics. Despite these exceptional qualities, however, the gapless band structure ofpristine graphene leads to low on/off ratios in the application of field effect transistors (FET),
hindering the development of graphene based devices. To take full advantage of the propertiesof graphene, therefore, it is important to develop a method to modify its electronic properties.
For instance, chemical defects in the sp2 hybridized surface lattice of graphene are known topromote bandgap opening, one of the requirements for the efficient operation of FETs.
Covalent modification of graphene and HOPG from radicals produced from diazonium
reagents is the most commonly used method to introduce chemical defect. However, thismethod is rather limited in terms of the grafting density due to multilayer formation and/or
dendritic growth of adsorbates during the diazonium chemistry.
Here we selected 3,5-bis-tert-butylbenzenediazonium (3,5-TBD) as a sterically hindered
reagent and succeeded in monolayer grafting with a high density.1
We have used high-resolution scanning tunneling microscopy (STM) measurements todirectly observe graphite lattice buckling at the site of covalent attachment to a previously
defect-free HOPG and graphene surface for the first time, demonstrating the value of STM forcharacterizing systems. Using suitable tunneling parameters, we have demonstrated STM
nanoshaving of grafted molecules for the first time under ambient conditions, which allows
complex topographic patterns to be created in high density grafted layers. Importantly, using
Raman spectroscopy and STM, we have proven that the pristine sp2 carbon lattice is restored
on removal of grafted species. Raman spectroscopy also indicates change in the electronic
properties of graphene and possiblity of tunable band gap opening following grafting of
3,5-TBD by varying the diazonium reagent concentration.
Our results settle several long-standing controversies regarding the details of diazonium
modification of carbon surfaces, while high density monolayer grafting opens the way for
efficient graphene-based devices.
[1] H. Uji-i et al. ACS Nano 9, 5520 (2015).
Corresponding Author: H. Uji-i
Tel: +81-11-706-9409, Fax: +81-11-706-9406,
E-mail: hiroshi.ujii@es.hokudai.ac.jp- 37 -

3-6
Graphene nanoribbon fabrication
by gate-controlled edge-selective photo-oxidation○Ryo Nouchi, Morihiro Matsumoto, Keiichiro Ikeda
Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai
599-8570, JapanAll carbon atoms in graphene belong to its surface, leading to controllability of surface
chemical phenomena by a configuration of a field-effect transistor (FET). In line with this“field-effect surface chemistry” concept, we have shown that photo-oxidation of graphene canbe controlled by the FET configuration, especially by the polarity of the gate voltage (Fig. 1)[1]. The gate-controlled photo-oxidation occurs selectively at the edges of the graphene
channel of the FET, and proceeds into the channel center. The formed graphene oxide is an
insulator, and thus narrowing of a conducting graphene channel becomes possible by thismethod. Although graphene is unsuitable for switching/digital device applications because of
no band gap, a finite band gap is known to be introduced by narrowing it down to nanometerscale. In this presentation, we report a conversion of a conductive wide graphene channel intoa semiconducting narrow graphene ribbon by means of the gate-controlled edge-selective
photo-oxidation.
-6

Drain current ID (A)

10

-7

10
10

-8

Ў

After

-9

10

Fig. 1: Gate-controlled edge-selective photo-oxidation of graphene.
The UV photo-oxidation was found to occur only under thenegative gate voltage [1].

Before

-60

-30
0
30
60
Gate voltage VG (V)Fig. 2: Change in the transfer
characteristics by the narrowing.
The drain voltage was set to 5 mV.

Mechanically exfoliated graphene flakes were formed on a highly doped Si substrate witha 300-nm-thick thermal oxide layer. A FET structure shown in Fig. 1 was obtained byfabricating Au electrodes (with Cr adhesion layers) by electron beam lithography processes.
Under application of the gate voltage of −60 V by using the FET configuration, the graphene
channel was irradiated by ultraviolet (UV) light (Ushio UXM-Q256BY, ~2 W/cm2) in air(27°C, relative humidity of 60%). A comparison of transfer characteristics (gate-voltage
dependence of the drain current) of the FET before and after the UV irradiation shows that thecurrent on/off ratio at room temperature largely increased from 3 to 50, which indicates a
successful conversion of a conductive wide graphene channel into a semiconducting narrowgraphene ribbon.
[1] N. Mitoma and R. Nouchi, Appl. Phys. Lett. 103, 201605 (2013).
Corresponding Author: R. Nouchi
Tel: +81-72-254-8394, Fax: +81-72-254-8394,
E-mail: r-nouchi@21c.osakafu-u.ac.jp- 38 -

3-7
Doping of porous nanostructuresżHidetsugu Shiozawa
1

Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria

In the interior of porous nanostructures, such as carbon nanotubes (CNTs) andmetal-organic frameworks (MOFs), atoms and molecules can be arranged in 1D arrays andnanoclusters that could outperform their bulky counterparts. Our experiments using Raman,
UV-Vis, photoemission, SQUID, electron microscopy and magnetotransport measurements
elucidate electronic and magnetic interactions at guest-host molecular interfaces that are
responsible for their unique physical properties [1,2]. We show that encapsulated inside
single-wall carbon nanotubes (SWCNTs), nickel clusters behave as stable single-domain
magnets exhibiting large coercive fields as the cluster size becomes as small as the exchange
length. In MOFs, metal ions are coordinated to form metal arrays and nanovoids. Magnetictransition metal arrays in MOFs are ideal systems in which we study anisotropic magnetic
coupling. Metal ions exposed to the interior voids react with infiltrating molecules, leading to
MOF’s sensing abilities. We show that the MOF’s electrical conduction and magnetic
ordering temperature can be tuned by molecular doping.
[1] H. Shiozawa et al. Sci. Rep. 5, 15033 (2015).
[2] M. Kharlamova et al. Nanoscale 7, 1383 (2015).
Corresponding Author: H. Shiozawa
Tel: +43-1-, Fax: +43-1E-mail: hidetsugu.shiozawa@univie.ac.at

Fig.1: A metal-organic framework (Co-MOF-74)
with a honeycomb nanostructure.

- 39 -

3-8
Fullerene Modification by Using Fullerene Cation Intermediate: Migration
and Cyclization○Yutaka Matsuo1,21

Hefei National Laboratory for Physical Sciences at Microscale, University of Science andTechnology of China, Hefei, Anhui 230026, China
2
Department of Mechanical Engineering, School of Engineering, The University of Tokyo,
Bunkyo-ku, Tokyo 113-8656, Japan

Fullerene cation, which is reactive and has an ability to rearrange, is of great interest andcan serve as a versatile platform for functionalization of fullerene. A number of functionalized
fullerenes which are difficult to synthesize otherwise, have been successfully obtained by therearrangement of a fine-designed fullerene derivatives cation. For example,
1,2-dihydromethano[60]fullerene was synthesized in nearly quantitative yield by using aγ-silyl fullerene cation.[1] A series of non-cyclic 1,2-diorgano[60]fullerene derivatives havebeen synthesized in good to excellent yield through an intramolecular Friedel–Crafts reactionof an arylsilylmethyl[60]fullerene cation derived from oxidation of an organo[60]fullerene
dimer or mono(organo)[60]fullerene anion.[2]Fullerene cation, however, had been considered to be difficult to generate because theelectronegative nature of the fullerene moiety. Thus, substrate scope and application has still
been limited so far. We employed fullerene anions or fullerene radicals as starting materials to
obtain key intermediate fullerene cations through oxidation using appropriate oxidants such ascopper(II) halides. In this presentation, we summarize various reactions using fullerene
cations, those are migration reactions and cyclization reactions to produce newfullerene-based electron-acceptors for organic solar cells application. In addition, in somereactions, additive plays important role to control the reaction. We will also disclose such
examples to understand reaction mechanisms of fullerene cations-based fullerene
modification reactions.
X–
H 3C

O

Figure. An example for fullerene cation-mediated cyclization reaction to produce a cyclo[60]fullerene derivative
References[1] Y. Matsuo, J. Kawai, H. Inada, T. Nakagawa, H. Ota, S. Otsubo, E. Nakamura, Adv. Mater. 2013, 25,6266–6269.
[2] Y. Zhang, Y. Matsuo, E. Nakamura, Org. Lett. 2011, 13, 6058–6061.
Corresponding Author: Y. Matsuo
Tel: +81-3-5841-0978, E-mail: matsuo@ustc.edu.cn; matsuo@photon.t.u-tokyo.ac.jp- 40 -

3-9
A15-structured Cs3C60 : the first non-cubic A3C60 fullerideżYasuhiro Takabayashi 1, Ruth H. Zadik 2, Kosmas Prassides 1, 3
1

WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai
980-8577, Japan2
Department of Chemistry, Durham University, Durham DH1 3LE, UK
3
Japan Science and Technology Agency, ERATO Isobe Degenerate π-Integration Project,
Tohoku University, Sendai 980-8577, Japan

C60-based solids with stoichiometry A3C60 are archetypal examples of unconventional
molecular superconductors in which electronic correlations play a dominant role. They are
known to adopt cubic crystal structures based either on fcc or bcc packing. The bcc-derived
A15-structured Cs3C60 fulleride is an antiferromagnetic (S = ½) Mott-Jahn-Teller insulator(MJTI) with a Néel temperature, TN of 46 K (Fig. 1b) [1]. It is the parent of thesuperconductors with the highest Tc (= 38 K) found for any molecular solid [2].
Superconductivity emerges from the MJTI by applying hydrostatic pressure. Here, we present
the results of a detailed investigation of the crystal structure of A15 Cs3C60 at ambientpressure using high-resolution synchrotron X-ray powder diffraction (SXRPD).
Peak broadening of selected Bragg reflections
due to anisotropic lattice microstrain was observedin the SXRPD data of A15 Cs3C60 below TN.
Careful consideration of the broadened peaks
allowed us to identify the presence of compressionof the cubic unit cell along its body diagonal,
consistent with the occurrence of a rhombohedral
distortion (inset Fig. 1a). Rietveld refinements of
the SXRPD data allowed a full characterization of
the low-temperature crystal structure. The
temperature dependence of the rhombohedral angle,
α mirrors the temperature evolution of themagnetization (Fig. 1). A15-structured Cs3C60
emerges as the first fulleride in which breaking of
the spin rotational symmetry (spin ordering) is
accompanied by simultaneous symmetry-breakingof the lattice and orbital degrees of freedom.
Fig.1 (a) Evolution of the unit cell angle withtemperature. The solid line is a guide to theeye. Inset shows a distortion from cubic torhombohedral symmetry. (b) Temperaturedependence of the magnetization.

[1] Y. Takabayashi, et al., Science 323, 1585 (2009).
[2] A. Y. Ganin, et al. Nat. Mater. 7, 367 (2008).
Corresponding Author: Yasuhiro Takabayashi
Tel: +81-22-217-5953, Fax: +81-22-217-5995
E-mail: yasuhiro.takabayashi.e4@tohoku.ac.jp- 41 -

࣏ࢫࢱ࣮Ⓨ⾲
Poster Presentations

1P-1
2P-1
3P-1

~
~
~

1P-40
2P-39
3P-39

1P-1
Preparation of gold nanoparticles stabilized bywater-soluble fullerenol C60(OH)36
żNozomi Sato, Ken Kokubo, Hidehiro Sakurai
Division of Applied Chemistry, Graduate School of Engineering, Osaka University,
Osaka 565-0871, Japan
Properties of gold nanoparticles (AuNPs) can be controlled by the design of theirprotecting ligands that stabilize the nanoparticles from their undesired aggregation [1].
Water-soluble polymer such as poly(vinylpyrrolidone) (PVP) is one of the representative
protecting ligands of AuNPs in aqueous solution. We have found that a naturally abundant
polymer, chitosan, as a protecting ligand improved the catalytic activity [2]. However,
because of the sterically regulated polymeric chain structure, the polymer ligands generally
require a large excess amount to stabilize AuNPs (colloidal size is ca. 10±100 nm). In addition,much stronger molecular-sized ligand instead of polymers, which can reduce the amount ofuse, may decrease the catalytic activity by complete covering of the Au surface.
To improve the ligand system, water-soluble carbon nanomaterials, which are well known
to form a nano-sized aggregation, can be good candidates for a newly designed ligand. Indeed,some examples on Au nanocomposites with C60 have been reported [3]. In order to prepare
the quasi-homogeneous colloidal dispersion of Au/fullerene composites in aqueous solution,water-soluble fullerenes are used. We have explored a series of polyhydroxylated fullerenes,
C60(OH)n (n = 10, 12, 24, 36, 44 etc), and among them, C60(OH)36 exhibits high watersolubility up to 17.5 mg/mL with high dispersion on a molecular level [4].
The AuNPs stabilized by C60(OH)36, Au:C60(OH)36, was prepared by common reduction
method with an excess amount of NaBH4 from HAuCl4 aqueous solution in the presence ofC60(OH)36+2O. The colloidal particles were homogeneously dispersed in water and werestable for months. Its core size (measured by TEM) and colloid size (by IG [4]) were 3.7±0.8
nm and 12.2±4.5 nm, respectively. XPS and XAS measurements revealed that Au:C60(OH)36
was negatively charged in total, but rather positively charged on the surface. It also exhibitedthe catalytic activity toward the reduction of 4-nitrophenol in the presence of NaBH4.

Fig.1 Image and the size of Au:C60(OH)36.
[1] D. Li, Q. He, J. Li, Adv. Colloid Interface Sci. 149, 28 (2009).
[2] R. N. Dhital, A. Murugadoss, H.Sakurai, Chem. Asian J. 7, 7325 (2011).
[3] M. Geng, Y. Zhang, Q. Huang, B. Zhang, Q. Li, W. Li, J. Li, Carbon 48, 3570 (2010).
[4] K. Kokubo, K. Matsubayashi, H. Tategaki, H. Takada, T. Oshima, ACS Nano 3, 237 (2008).
Corresponding Author: K. Kokubo, H. Sakurai
Tel: +81-6-6879-4592, Fax: +81-6-6879-4593,
E-mail: kokubo@chem.eng.osaka-u.ac.jp, hsakurai@chem.eng.osaka-u.ac.jp- 43 -

1P-2
Thermal single electron transfer between C60 and dienamines leading topyrrolidinofullerenes via hydrogen shift of radical intermediates○Naohiko Ikuma, Hiroyuki Yamamoto, Ken Kokubo, Takumi Oshima
Division of Applied Chemistry, Graduate School of Engineering,Osaka University, Suita 565-0871, Japan
Single electron transfer (SET) reaction of donor reagents with C60 is a useful procedure forformation of fullerene monoadducts via radical or ionic coupling because the reduced
electrophilicity of monoadduct inhibits further addition. Previously we have reported theselective [2+2] monoaddtion of enamines with C60 [1]. Here, we present the SET reaction of
dienamines with C60 followed by unexpected hydrogen shift to give pyrrolidinofullerenes[2,3].
Aryl-substituted dienamines 1 with variously substituents were reacted with C60 under dark
condition to give pyrrolidinofullerenes 2 in 21–58 % yields. The reaction mechanism includes
SET of diaryldienamines to C60 and the following consecutive 1,6-hydrogen shift and the [3 +2] cycloaddition of the generated radical ion pair, clarified by DFT calculations and EPR
measurement with a spin-trapping agent (nitrosobenzene). The LUMO levels of
pyrrolidinofullerenes were ca. 0.1 eV higher than that of C60, consequently suppressing thebisadduct formation. The phenyl–substituted pyrrolidinofullerene 2a representatively
exhibited the protic acid-catalyzed intramolecular Friedel–Crafts cyclization and the
DDQ-induced oxidative cycloreversion into C60.
Me

O

O

α

α

N

N Ar

Ar

1

H

1

3

H

+ C60

Ar

toluene, 90 ºC

3Ar
dienamine 1[3 + 2] adduct 2 (21–58%)

SET1) radical coupling2) ion coupling

C60
O
N
Ar
H

O
H
N
Ar

Ar

O
H

H-shift

α

N

CH2
Ar

Ar

H

1

CH 3
3

Ar
Spin density map(B3LYP/6-31G(d))[1] T. Mikie, H. Asahara, K. Nagao, N. Ikuma, K. Kokubo, T. Oshima, Org. Lett. 13, 4244 (2011).
[2] N. Ikuma, H. Yamamoto, K. Kokubo, T. Oshima, Chem. Lett., 43, 1648 (2014).
[3] N. Ikuma, H. Yamamoto, K. Kokubo, T. Oshima, Heterocycles, 90, 1168 (2015).
Corresponding Author: N. Ikuma
Tel: +81-6-6879-4592, Fax: +81-6-6879-4593, E-mail: ikuma@chem.eng.osaka-u.ac.jp- 44 -

1P-3
Availability of fullerene for skin photo-aging;Anti-inflammatory and suppression of carboxylated protein generation.
żHisae Aoshima, Masayuki Ito
Vitamin C60 BioResearch Corporation,
Tatsunuma Bldg. 9F 1-3-19 Yaesu Chuo-ku, Tokyo 103-0028, Japan
Fullerene is a carbon allotrope with a unique structure in which the carbon atoms arebonded with each other to form soccer ball-like structure. The efficient radical
scavenging/anti-oxidant properties as part of a new class of carbon materials has attracted
considerable attention for companies innovating in the cosmetic and pharmaceutical sectors.
Fullerene as a cosmetic ingredient composed with polyvinylpyrrolidinone (PVP) has beenon the market since 2005 (Fig.1).
We examined the effect of fullerene on UV induced prostaglandin E2 (PGE2) andinterleukin-8 (IL-8) productions in reconstructed human epidermis (RhE). The UV induced
PGE2 [1] and IL-8 productions were significantly suppressed by the addition of fullerene.
Carboxylated proteins are known as cause of skin dullness. They are produced by UV
irradiation and generate radicals in the stratum corneum. We examined the effect of fullerene
on UV induced carboxylated proteins production in human stratum corneum. The UV induced
carboxylated proteins were remarkably inhibited by the addition of fullerene.
In this conference, we will show the radical scavenging properties, anti-inflammatory
effects, and the suppression of carboxylated protein generation by fullerene. In addition, we
will introduce the results of safety evaluation tests of fullerene for human skin applications [2,3].

Fig.1: Fullerene composed with PVP.

[1] S. Inui et al. J. Nanobiol. 12:6, Open Access (2014).
[2] H. Aoshima et al. J. Toxicol. Sci. 34:5, 555 (2009).
[3] H. Aoshima et al. J. Toxicol. Sci. 35:3, 401 (2010).

- 45 -

Fig.2: Suppression of IL-8 by fullerene.
Corresponding Author: Hisae Aoshima
Tel: +81-3-3517-3253, Fax: +81-3-3517-3260
E-mail: hisae.aoshima@vc60.com

1P-4
Nanoscale Water Droplet Confined in Fullerene Bilayer Vesicles○ Sai Prakash Maddala1, Tatsuya Homma1, Ricardo M. Gorgoll1, Koji Harano1, Wasim
Abuillan2, Alexandra Burk2, Motomu Tanaka2, Eiichi Nakamura1
1

2

Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
Institute of Physical Chemistry, University of Heidelberg, D69120 Heidelberg, Germany

Understanding the behaviour of water
confined on nano- and mesoscales is a key
to gaining complete understanding ofdiverse biophysical phenomena such as
water transport in cells, protein folding etc.1
However, conventional lipid or polymer
vesicles lack the robustness necessary toisolate and characterize confined water. Figure 1: Schematic representation of preparation
Herein we report that highly robust of fullerene bilayer vesicles
containers for the entrapment of water molecules at nano and mesoscale (> 100 nm) wereprepared by the self-assembly of potassium salt of functionalized fullerene molecules R5C60–
K+, where R = Ph (PhK), p-C20H41C6H4 (C20K) and p-C8F17C6H4 (F8K), respectively(Figure 1). The vesicles were prepared by injecting monomer solution, in THF, into water.
Through careful variation of the injection rate, stirring rate and reaction volume, we were able
to control the monomer self-assembly and achieved highly monodisperse bilayer vesicles onnano and meso length scales. The presence of water in vesicles deposited on solid substrate
was determined using SEM/EDAX analysis (Figure 2A). Despite the ultrahigh vacuum
conditions (10-5 pa), we were able to demonstrate by the presence of oxygen signals (water isthe sole source of oxygen in the vesicles). Quantitative evaluation of total oxygen content was
performed for F8K, using fluorine atom as the internal standard. Finally, we were able tovisualize additive mediated controlled disruption and release of water from the F8K vesicles
using STEM (Figure 2B). Small Angle Neutron Scattering analysis was used to probe thevesicle morphology and permeability of the bilayers. The vesicles had a permeability of 2.6 x
10-13 m/s, which is 109 times lower than that of lipid bilayers. Thus making these vesicles
among the most robust bilayer materials known.






C




O

Figure 2: A) SEM image and EDX of C20K vesicle showing the presence of oxygen; B) Controlled water
release (STEM images from F8K vesicles following the addition of C8F18[1] a) L.Barros da Silva, J. Nanostruct. Chem., 2014, 4, 104. b) V.V. Chaban, V.V. Prezhdo and O.V. Prezhdo,
ACS Nano, 2012, 6, 2766-2773. c) D. Chandler, Nature, 2005, 437, 640-647.
Corresponding Author: E. Nakamura
Tel: +81-3-5841-4369, Fax: +81-3-5841-4369,
E-mail: s.p.maddala@chem.s.u-tokyo.ac.jp- 46 -

1P-5
ESR measurements of Gd@C60(CF3)3○Takahisa Yamaguchi1, Ayano Nakagawa3, Hisanori Shinohara3,
Ko Furukawa4, Tatsuhisa Kato1,2
1

Graduate School of Human and Environmental Studies, Kyoto University, Kyoto 606-8501,
Japan
2
Institute for Liberal Arts and Sciences, Kyoto University, Kyoto 606-8501, Japan3
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
4
Department of Chemistry, Niigata University, Niigata 950-2181, JapanThe Nagoya group of authors succeeded to produce trifluoromethyl derivatives of Gd@C60 by
the arc discharge of a metal/graphite composite rod with polytetrafluoroethene as source forfunctional group.[1] The electron spin state of the major isolated component of Gd@C60(CF3)3
was investigated by ESR spectroscopy.
Gd@C60(CF3)3 exhibited the ESR spectrum shown in Fig. 1, which was observed by X-band
ESR spectrometer at 4K and well reproduced by the computer simulation using positive valueof zero field splitting D = 0.2365 cm-1, E = 0.0000 cm-1, and the spin quantum number S=7/2.
The S=7/2 spin state was attributed to seven radical electrons on the 4f orbital of an endohedral
gadolinium ion with the closed-shell electronic structure of carbon cage. Considering thecomputer simulation for W-band ESR measurement, as shown in Fig. 2, the quantum number
of S=7/2 would be confirmed by the clear structure of W-band spectrum, and the positive signof D would be determined by W-band measurement at low temperature. The zero value ofparameter E suggested the uniaxial symmetric structure of Gd@C60(CF3)3. It is noticeable thatthe value of D is comparable with those for S=7/2 states of Gd@C82,[2] and topological isomersof Eu@C82.[3]Fig. 1. X-band ESR observed (Obs.) and

Fig. 2. W-band ESR simulated spectra

simulated (Sim.) spectra of Gd@C60(CF3)3 .

Gd@C60(CF3)3.

References[1] Z. Wang et al., Angew. Chem. Int. Ed. 52, 11770-11774 (2013).
[2] K. Furukawa et al., J. Phys. Chem. 107, 10933-10937 (2003).
[3] H. Matsuoka et al., J. Phys. Chem.108, 13972-13976 (2004).
Corresponding Author: Tatsuhisa Kato
Tel: +81-75-753-6695, Fax: +81-75-753-6695, E-mail: kato.tatsuhisa.6e@kyoto-u.ac.jp- 47 -

1P-6
Electronic properties of PCBM under an external electric field
Sho Furutani and Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki
305-8571, Japan
Functionalized fullerenes are known to possess unusual electronic structure, which is totally different
from that of the pristine fullerene, making them constituent materials of the optical, optoelectronic,
magnetic, and photovoltaic devices. Since fullerene and functionalized fullerene possess the deep lowest
unoccupied states, they act as n-type semiconducting constituent materials of organic thin film solar cells
with

high

conversion

efficiency.

[6,6]-phenyl-C61-butyric

acid

methylester(PCBM)

andsilylmethylfullerenes (SIMEF) are widely used for the electron accepters of the organic photovoltaic
devices. However, microscopic mechanism of the electron accumulation in this molecule by the electric
filed is not elucidated yet. Therefore, in the present work, we aim to investigate the electronic propertiesof PCBM under an external electric field by using the density functional theory combined with theeffective screening medium method to give theoretical insight into the microscopic mechanism of thecarrier accumulation in PCBM. To investigate the effect of the molecular arrangement on the carrier
accumulation, we consider two different molecular arrangements with respect to the gate electrode.
Figure 1 shows the electrostatic properties of PCBM under the zero electric field. As shown in Fig. 1, thepotential at the tail region of PCBM is lower by 0.32 V than that at the head region, indicating that PCBM
possess electric dipole moment, because of the asymmetric shape and attached functional group onto C60
cage. The dipole moment is expected to affect the carrier injection into PCBM with respect to theirmutual molecular arrangement to the electrode. In fact, we find that the accumulated electrons are
localized on the bowl region under the head-to-tail arrangement with respect to the electrode, while they
are extended throughout the molecule in the tail-to-head arrangement. In accordance with the carrier
distribution, induced electric field around the PCBM under the external electric field also depends on themolecular arrangement. The accumulated electrons on the molecular feathers lead to the substantial
electric field concentration around them because of its sharpen shape. The present results give a guiding
principle for designing the p-n junction of organic photovoltaic devices.

Fig.1 Contour plot of the electrostatic potential of
PCBM without the external electric field.

Corresponding author: S. Furutani
Tel: +81-29-853-5600 (ext.8233), Fax: +81-29-853-5924,
E-mail: sfurutani@comas.frsc.tsukuba.ac.jp- 48 -

1P-7
Electronic states of chalcogen encapsulated in single-walled carbon
nanotubes studied by First-Principles DFT calculations○1Yutaka Sato, 2Yosuke Kataoka, 1Eita Yokokura and 1,2,3 and Hironori Ogata
1

Graduate School of Science and Engineering, Hosei University, Koganei 184-8584, Japan
Department of Faculty of Bioscience and Applied Chemistry, Hosei University, Koganei,
184-8584, Japan
3
Research Center for Micro-Nano Technology, Hosei University, Koganei 184-0003, Japan
2

Single-walled carbon nanotubes(SWNTs) have a hollow space in the nanometer size that canbe encapsulated various functional molecules. The conﬁned molecular assemblies is expected
to exhibit unique low-dimensional structures and solid state properties that can not be realized
in the bulk states. Recently, syntheses of sulfur encapsulated SWNTs or selenium
encapsulated DWNTs and unique one-dimensional conductive sulfur chain structure or
double-helices selenium structure were reported. In this study, we report the effects ofchirality and diameter of CNTs on the local structure and molecular structure and electronic
states of the chalcogens encapsulated by SWNTs by using first-principles DFT calculations.
We calculated the band structures and solid 33S- NMR parameters (NMR chemical sift tensors
and electric field gradient (EFG) tensors). All of the calculations were done by using aOpen-Source computer code package PWscf and GIPAW in Quantum ESPRESSO. Table 1
shows the EFG tensors at S-sites in S@(5,5)SWNT and S@(7,0)SWNT. The detailed results
including both band structures and 33S-NMR chemical shift tensors in S@SWNT withdifferent chiral structures will be presented.

Table 1. EFG tensors at S-sites in S@(5,5)SWNT and S@(7,0)SWNT.
References[1] Toshihiko Fujimori et al. Nature Communications4(2013)2162.
[2] Frank H.Stillinger et al. J.Phys.Chem85(1986)6460.
[3] Frank H.Stillinger et al. J.Phys.Chem.1987, 91 (19), pp4899-4907.
[4] Toshihiko Fujimori et al. ACS Nano vol.7 No.6(2013)5067-5613.
[5]T.A wagler et al. Journal of Magnetic resonance 161 (2003) 191-197.
[6]L.A. O’Dell, I.L. Moudrakovski. Journal of Magnetic Resonance 207 (2010) 345-347.
[7] P. Giannozzi et al., J.Phys.:Condens.Matter, 21(2009)395502.
Corresponding Author: H. Ogata Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp- 49 -

1P-8
Bolometric performance of highly purified (6,5) Single Walled Carbon Nanotubes
Junko Eda, żYohei Yomogida, and Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Because of the smallness of specific heat and the large optical absorption in far-infra redregion of single walled carbon nanotubes (SWCNTs), the bolometric performance of
SWCNTs and their applications for temperature sensors have been intensively studied.
Previously, we have proposed the importance of preparation of high-purity semiconducting
SWCNT samples for improving the performance due to their intrinsically large resistancechange by the shift of the temperature. Recent progressof purification techniques enables us to prepare
single-chiral semiconducting SWCNTs with purity
more than 99% on the basis of analyses of their opticalabsorption spectra. Here we demonstrate how the
purity significantly influences the bolometricperformance of their thin film devices. We prepared
two types of purified (6,5) SWCNTs with different
purity. Here the purity was tentatively evaluated fromthe ratio of optical absorption intensities at around (6,5)
peak and 450 nm (Fig. 1(a)). The one, which is calledas P-(6,5), is 0.19, and the other, which is called as
HP-(6,5) is 0.07, indicating that the amount ofamorphous carbon and metallic nanotubes in HP-(6,5)
would be less than the half of that in P-(6,5). We
fabricated thin films on parylene substrates andmeasured the resistance changes upon the illuminationof black body radiation (BBR) with different
temperature. In the case of HP-(6,5), we observed clear
resistance change when the BBR temperature is 30 ºC
at room temperature, 20ºC. The ratio of resistancechange by the illumination of BBR as a function of
BBR temperature is plotted in Fig. 1(c). The sensitivityof HP-(6,5) was 10 times better than that of P-(6,5).
The noise equivalent temperature was significantly
reduced from 1.1 ºC in P-(6,5) to 0.1 ºC in HP-(6,5).
These results clearly indicate the importance ofhigh-purity semiconducting SWCNTs for theirbolometric applications.
This work is supported by Huawei Innovation
Research Program (HIRP)
References:[1] He et al., Adv. Optical. Mater. 3, 989 (2015), FIG1 : (a) Optical absorption
spectra, (b) responses to the BBR[2] Yanagi et al, ACS Nano 4, 4027 (2010), [3] Yomogida et al.,Nat. Comm. 7, 12056 (2016).
with temperature of 30 ºC, (c)Corresponding Author: Kazuhiro Yanagi
relationship between resistancee-mail: yanagi-kazuhiro@tmu.ac.jp
change and BBR temperature.

- 50 -

1P-9
Superconductivity in WS2 chiral nanotube
żFeng Qin1, Wu Shi1, 2, Toshiya Ideue1, Masaro Yoshida1, Alla Zak3, Reshef Tenne4,
Tomoka Kikitsu5, Daishi Inoue5, Daisuke Hashizume5, Yoshihiro Iwasa1, 5
1

2

Quantum Phase Electronics Center (QPEC) and Department of Applied Physics,

The University of Tokyo, Tokyo 113-8656, Japan
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
USA

3

Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, P. O. Box 305, Holon,
4IsraelDepartment of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100,
5IsraelRIKEN Center for Emergent Matter Science (CEMS),Wako, Saitama 351-0198, Japan

Superconductivity characteristic in low dimensional structures, such as nanotubes (NTs), isof great interest, because of their uniqueness in geometry. Despite the intensive studies ofsuperconductivity in carbon NTs[1], properties reflecting its peculiar cylindrical/chiralgeometries[2] have remained elusive. One of the manifestations of the chiral structure in theelectronic transport is the nonreciprocal resistance[3]. As shown in Fig. 1, the two directionsof current injection are not identical due to the chiral nature of the conducting substance whenthe magnetic field is applied parallel to the tube.
Here we report the first observation of superconductivity in individual multi-walled
tungstent disulfide (WS2) chiral nanotubes[4] induced by ionic gating. The interference ofsupercurrent along the tube circumference was proved by the periodic magnetoresistanceoscillation with the period of a flux quantum inside the tube[5]. More importantly, theobservation of antisymmetric second harmonic signal in AC resistance provides unambiguous
evidence of unprecedented nonreciprocal superconducting transport originating from the tube
chirality[6], consistent with electron diffraction analysis as shown in Fig. 2. In view of thewealthy family of materials[7,8], the present result indicates that chiral nanotubes should be a
new platform for the nanoscaled superconductivity with broken inversion symmetry.
[1] M. Koiciak et al., Phys. Rev. Lett. 86, 2416-2419(2001)[2] S. Iijima, Nature 354, 56-58 (1991)[3] G. L. J. A. Rikken et al., Phys. Rev. Lett. 87, 236602(2001)[4] R. Tenne et al., Nature 360, 444-460 (1992)[5] W. A. Little et al., Phys. Rev. Lett. 9, 9 (1962)[6] V. Krstiü et al., J. Chem. Phys. 117, 11315 (2002)[7] L. S. Panchakarla et al., J. Phys. Chem. Lett.
"Perspectives" 5, 3724-3736 (2003)[8] C. N. R. Rao et al., Dalton Trans. 1, 1-24 (2003)
Corresponding Author: F. Qin
Tel: 03-5841-6822(26822), Fax: -5841-6822(26822),
E-mail: qinfeng@mp.t.u-tokyo.ac.jp- 51 -

Fig. 1: Nonreciprocal
superconductivity inWS2 chrial nanotube

Fig. 2: Electron
diffraction analysis of
WS2 chiral nanotube

1P-10The structural contribution to the electrical character of super-growth
SWCNT forest through a height dependent studyżTakayuki Watanabe2, Hiroe Kimura2,4, Shigeki Hano2,4, Shunsuke Sakurai1,2, Motoo
Yumura1,2, Kenji Hata1,2,3,4 and Don N. Futaba1,2
1

CNT Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, 305-8565, Japan
2
Technology Research Association for Single Wall Carbon Nanotubes (TASC), Tsukuba,
305-8565, Japan
3
Japan Science and Technology Agency, c/o AIST, 34 Miyukigaoka, Tsukuba, Ibaraki
305-8501, Japan
4
Tsukuba University, Department of Pure and Applied Sciences, Tsukuba University, Tsukuba,
305-8573, Japan
We report an electrical investigation of super-growth SWCNT forests where we havesucceeded in elucidating the electrical contributions of the forest surface (cap) and verticallyaligned (body) structures of the assembly [1]. We applied an electrical characterization
method to SWCNT forests patterned into a Hall bar-like configuration to reliably evaluate thelateral (i.e. in-plane) resistance for a series of SWCNT forests spanning three orders ofmagnitude, 0.3 to 700 Pm, in height while avoiding direct mechanical contact to themeasurement region.
Figure 1 shows the measured resistivities along lateral direction of forests at each forest
height and fitting curve. A simple model based on treating the forests as two parallel resistors
was used to explain the observed behavior of the lateral resistivity and forest height. The
model well explains the behavior of the measurement data. Fitting results also showed that
there is a large difference between the cap and body resistivity, which ranges 20~700 times.
In summary, we showed that the forests resistivity could be simply described electricallyby two structural features, the cap and body, through 0.3 ~ 700 um height range. In addition,
our analysis found that the resistivity of the body was about 20 ~ 700 times higher than that of
the cap.
[1] T. Watanabe et al. Carbon. 108, 106(2016).
Corresponding Author: DN. Futaba
E-mail: d-futaba@aist.go.jp

Fig.1 Height dependence of supergrowth SWCNT forest resistivity.

- 52 -

1P-11Development of Air-stable n-type Thermoelectric Materials wtih
Benzimidazole derivative-doped Single-walled Carbon NanotubesżYuki Nakashima1, Tsuyohiko Fujigaya1,2,3, Naotoshi Nakashima1,2

1 Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka,
2 World Premier International (WPI), International Institute for819-0395, Japan
3 Precursory Research for Embryonic Science andCarbon-Neutral Energy ResearchTechnology (PRESTO), Japan Science and Technology Agency (JST)Despite the remarkable growth of microelectronics such as wearable and portable devices,
remote sensors, etc. on the market in recent years, most of the microelectronics are still
powered by batteries that are required to recharge and replace at stated periods. One possible
solution for powering these wireless microelectronics without a battery is to harvest energy
from the human body by using thermoelectric (TE) generation which generates electricity
especially from temperature difference. To generate electricity via Seebeck effect is promising.
Seebeck effect is the phenomenon that a temperature difference between hot and cold ends of
the TE generators that produces a voltage. To fabricate the TE devices, p- and n-type materials
are necessary and the study of TE materials using inorganic semiconductors such as Bi2Te3
have been done for a long time as they illustrate high efficiency. However, these materials
contain rare elements which show toxicity and poor processability. Therefore among theseveral candidates including conducting polymers, transition metal dichalcogenide and carbon
nanotubes (CNTs), single-walled CNTs (SWNTs) are emerged as the promising candidate dueto their non-toxicity, processability, abundant resources together with the remarkableelectrical conductivity, potentially large Seebeck coefficient and light weight. However, due tothe air oxidation, SWNTs only show p-type semiconducting property in air. In thedevelopment of the CNT-based TE devices, instability of the n-type CNT has been a central
issue, since n-type SWNT are easily oxidized due to an electrophilic chemisorption ofoxygen.[1] Previously, we reported n-type SWNT by encapsulating cobaltcence to SWNT,
however, n-type stability lasts only 30 days in air.[2] Therefore, in this study we explored an
air-stable n-type thermoelectric material by covering
the anion part of the SWNT surface by using cationicmolecules as a dopant (n-type dopant). In this strategy,
2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-b
enzo [d] imidazole (DMBI) was chosen, since it isstable in the atmosphere, forms a stable cationic state
by hydride transfer[3] and is known as n-type dopant
for other carbon materials, such as graphene andfullerene.[4] We evaluated the air stability of SWNT
doped by DMBI and found that the n-type nature of
the DMBI-doped SWNT was stable at least for 170
days at room temperature.[5][1] Cheng, J.-P et al. J. Am. Chem. Soc. 2008, 130, 2501.
Fig. 1 Time course of Seebeck[2] Nakashima, N et al. Sci. Rep. 2015, 5, 7951.
coefficient of DMBI-doped SWNT
[3] Bao, Z et al. J. Am. Chem. Soc. 2010, 132, 8852.
measured at 320 K[4] Bao, Z. et al. Nano Lett. 2013, 13 (5), 1890.
[5] Nakashima, Y. Nakashima, N. Fujigaya, T. submitted.
Corresponding Author: Fujigaya, T.
Tel: + 81-92-802-2842, Fax: +81-92-802-2842, E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 53 -

1P-12Fabrication of Multi-walled Carbon Nanotube / Polystyrene Compound
Materials through Photo-induced Chemical Bond Formation○Takuma Baba1, Tomoya Takada 2
1

Graduate School of Photonics Science, Chitose Institute of Science and Technology,
Chitose 066-8655, Japan2
Department of Applied Chemistry and Bioscience, Chitose Institute of Science andTechnology, Chitose 066-8655, Japan

Modification of polymers with carbon
nanotubes (CNTs) is important for
fabricationoffunctional
materials
containing CNTs. In this work, we preparedmulti-walled carbon nanotubes (MWCNTs)/ polystyrene derivatives compoundmaterials through photochemical covalentbond formation induced by UV lightirradiation (Scheme 1). In addition,
photothermal conversion characteristics ofthe materials obtained were evaluated bymeans of thermography observation.
Firstly, p-(chloromethyl)styrene and
MWCNTs
were
mixed
in
Scheme 1 Fabrication of MWCNTs / polystyrene
N-methylpyrrolidone and irradiated with compound materials.
UV light (250 – 385 nm) from a xenon lightsource at room temperature for 3 hours. Then, the resultant product was polymerized using
azobisisobutyronitrile radical initiator. The obtained viscous polymer solution was diluted
with solvent, and then polymer films were made by spin-coating on glass pieces. Chemical
structure of the composite materials was analyzed by means of some spectroscopic techniques(1H NMR, Raman, XPS, and so on). In order to evaluate photothermal conversion property ofthe materials, the materials were irradiated with infrared light (IR) from a xenon light source
and the temperature change during the irradiation was observed by using a thermal imaging
camera.
According to the NMR spectroscopy, decrease of –CH2Cl groups ofp-(chloromethyl)styrene and formation of alkyl groups from vinyl groups were confirmed.
Structural change of MWCNTs before and after the irradiation was also observed by means ofRaman spectroscopy. These results confirmed the covalent bond formation and subsequent
polymerization. Other results such as the XPS analysis and the observation of
infrared-induced temperature change will be shown at the symposium.
This work was supported by Nanotechnology Platform Program of the MEXT, Japan, and
JSPS KAKENHI. The authors acknowledge the Laboratory of XPS analysis (technical stuff:
Mr. Keita Suzuki), Hokkaido University.
Corresponding Author: T. Takada
Tel: +81-123-27-6056, Fax: +81-123-27-6056, E-mail: t-takada@photon.chitose.ac.jp- 54 -

1P-13
Role of S-extended Aryl Crown Ethers in the Salt-induced
Chemical n-type Doping of Single-walled Carbon Nanotubes○Tomohiro Ikeda1, Yoshiyuki Nonoguchi1, Tsuyoshi Kawai1
1Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma
630-0192, JapanDue to an increased demand for ambient thermal energy harvesting, the thermoelectric
properties of light-weight flexible conductors including single-walled carbon nanotubes(SWNTs) have recently been evaluated. The construction of high-performance bipolar
modules requires both p-type and n-type materials. It is recognized that SWNTs can be
n-doped by efficient electron donors including alkali metals and polyamines. However, achallenge in the rational design of air-stable n-type SWNTs has long remained to be addressed.
We have very recently proposed the electrostatic compensation of negatively-charged carriersin n-type SWNTs using large cationic complexes [1,2]. SWNTs are converted to n-typeconductors by doping with salt-crown ether complexes, and large cationic complexes
effectively stabilize the negatively-charged n-type products.
Here we explore limiting factors governing the salt-induced n-type doping by usingsynthetic S-extended alyl crown ethers as host dopants. Prior to thermoelectric evaluation,
parent SWNT buckypapers were dipped in the 0.01 M stock solution of KOH and crown ether
derivatives: 18-crown, benzo-18-crown, 2,3-naphtho-18-crown, and 1,2-naphtho-18-crown.
All treated SWNTs showed the negative Seebeck coefficient and increased electricalconductivity, indicating efficient n-type doping (Fig.
1). Importantly, π-extended host dopants such as
naphtho-crown ethers enabled relatively-deep doping
and its stabilization, as suggested by the conductivity
exceeding 2000 S/cm in air. The n-type doping of
SWNTs was further characterized using vis-NIR,
Raman, and photoelectron spectroscopy. We will Fig.1: The Seebeck coefficient andelectrical conductivity of n-type SWNTs.
discuss the chemical origin of the highly-stable
n-type doing of SWNTs, by considering theelectrostatic interaction of n-type SWNTs withcationic potassium-crown ether complexes (Fig. 2).
[1] Y. Nonoguchi et al. Sci. Rep. 3, 3344 (2013).
[2] Y. Nonoguchi et al. Adv. Funct. Mater. 26, 3021 (2016).
Corresponding Author: Y. Nonoguchi
Tel: +81-743-72-6181, Fax: +81-743-72-6179,
E-mail: nonoguchi@ms.naist.jp- 55 -

Fig.2: Electrostatic potential mapping ofcrown ether host dopants.

1P-14
Improvement of Single-Walled Carbon Nanotube Cathodes
for Perovskite Solar Cells○Takahiro Sakaguchi1, Hayato Kobayashi1, Hiroki Suko1, Takeshi Okochi1, Taiki Inoue1,
Rong Xiang1, Shohei Chiashi1, Esko I. Kauppinen2, Shigeo Maruyama1,3
12

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Applied Physics, Aalto University School of Science, Espoo 15100, Finland
3
Energy NanoEngineering Lab, National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8564, Japan

Perovskite solar cells [1] are attracting a lot of attention due to their high power
conversion efficiency (PCE) with low-cost materials. The PCE was 3.8 % in 2009 [1]and has drastically increased to 22.1 % [2]. As cathodes, gold electrodes and SpiroMeOTAD are used in conventional perovskite solar cells. Both gold and SpiroMeOTAD are expensive, and the latter is unstable in ambient. Single-walled carbon
nanotubes (SWNTs) have been reported to act as cathodes in perovskite solar cells by
substituting gold and Spiro-MeOTAD [3]. However, PCEs of perovskite solar cells with
SWNT cathodes have not yet attained those with conventional cathodes.
In this study, we developed a novel fabrication method of perovskite solar cells using
SWNTs as cathodes to realize improved interface between perovskite crystals and SWNTs. Drydeposited SWNT films [4] were employed, and solar cell structures were fabricated bydeposition of TiO2 layers, perovskite crystals, and SWNT films on FTO/glass substrates inambient air. While SWNT films are usually transferred on perovskite crystals at the last step
(type 1 cell), we inserted the transfer process of SWNT films between two-step spin coating of
perovskite crystal precursors (type 2 cell). Figure 1 shows the J-V characteristics of the type 1
and the type 2 cells. The type 2 cell achieved better fill factor than the type 1 cell. This indicatesthe contact between SWNTs and perovskite crystals is considerably improved. We further
increased the PCE of the type 2 cell by adding PMMA layers on top of the SWNT films (Fig.
2).

[1] A. Kojima et al., J. Am. Chem.
Soc.,131, 6050 (2009).
[2] http://www.nrel.gov/ncpv/
images/efficiency_chart.jpg[3] Z. Li et al., ACS Nano, 8, 6797
Fig. 1 J-V characteristics of type 1(2014).
and type 2 cells.
[4] A. Kaskela et al., Nano Lett.,
10, 4349 (2010).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5841-6421,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 56 -

Fig.2 J-V characteristics of w/
PMMA and w/o PMMA cells.

1P-15Iron-Nitrogen-Doped Vertically Aligned Carbon Nanotube Electrocatalyst
Synthesized through Instantaneous and Repetitive Pyrolysis for
Oxygen Reduction Reaction○Yosuke Uchibori, Satoshi Yasuda, Kei Murakoshi
1

Department of Chemistry, Faculty of science, Hokkaido University,
Sapporo, 060-0810, Japan

Development of alternatives to costly and limited reserves Pt-based catalysts for oxygen
reduction reaction (ORR) has become one of the hot topics in polymer electrolyte fuel cells(PEFC) field. Among the various Pt replaced candidates, Fe coordinated to nitrogen
functionalized graphitic carbon (Fe-N-C) catalysts have been attracted much attention due totheir high ORR activities in acid solution. Although various approaches have been performed
to enhance ORR activity, the resultant catalysts still suffers from limited activity presumably
due to low density of the Fe-N-C catalytic sites. To resolve the issue, we developed abundantactive Fe-N-C sites attached to a vertically aligned carbon nanotube (VA-CNT), which has ahigh specific surface area, by pyrolyzing iron phthalocyanine (FePc) molecules adsorbed on
VA-CNTs.1 In this study, we explored an influence of the pyrolysis process upon the ORR
activity to realize the further activation.
Fe-N-C coated VA-CNTs catalyst was synthesized by pyrolyzing FePc molecules adsorbed
on VA-CNTs. Instantaneous and repetitive pyrolysis (several times at the pyrolysis conditionof 900 oC under Ar atmosphere for 1minute) were employed to inhibit ORR inactive Fe
nanoparticle formation. Ring rotating disk electrode (RRDE) voltammetry in oxygen
saturated 0.5 M H2SO4 solution was performed to evaluate the ORR activities.
The catalyst synthesized by the process exhibited high ORR activity of half-wave potentials
of 0.79 V versus the reversible hydrogen electrode (RHE), high selectivity 3.96 electrontransferred number in oxygen-saturated 0.5 M H2SO4 solution (“Short” in Fig. 1), compared
to a conventional catalyst (half-wave
potentials of 0.76 V) synthesized bycontinuous pyrolysis process (“Long” in
Fig. 1). These results strongly indicate thatthe instantaneous and repetitive pyrolysis
process enables to inhibit the Fe
nanoparticle, resulting in formation ofdense Fe-N-C active site on VA-CNT
surface.
Reference[1] S. Yasuda, A. Furuya, Y. Uchibori, K. Murakoshi,
Adv. Funct. Mater., 2016, 26, 738-744.
Corresponding Author: S. Yasuda
TEL: +81-(0)11-706-4811,
FAX: +81-(0)11-706-4811

Fig. 1 RRDE polarization curves of
Fe-N-C/VA-CNT in an O2-saturated 0.5 M
H2SO4 solution.

E-mail: satoshi-yasuda@sci.hokudai.ac.jp- 57 -

1P-16
Synthesis of new-structured multi-walled carbon nanotubes inside siliconcarbide nanotubesżTomitsugu Taguchi1, Shunya Yamamoto1, Hironori Ohba1
1

Quantum Beam Science Research Directorate, National Institutes for Quantum andRadiological Science and Technology, Tokai-mura, Ibaraki 319-1106, Japan

Carbon nanomaterials such as fullerenes, carbon nanotubes, and graphene have attracted
particular attention due to their fascinating geometries and physical properties. In particular,
carbon nanotubes represent an interesting and important class of carbon based nanomaterials
with wide-ranging applications. It is, therefore, required to synthesize the carbon nanotubes
with new structure in order to develop and broaden the application of carbon nanotubes.
Multi-walled carbon nanotubes (GSI creos Corporation, Tokyo, Japan) were used as
template materials. The C-SiC coaxial nanotubes were synthesized by heating multi-walledcarbon nanotubes with Si powder at 1200 ºC for 100 h in a vacuum [1, 2]. The C-SiC coaxial
nanotubes were irradiated with 340 keV Si+ ions from 400 kV ion implanter at room
temperature. The ion fluence was 2.4 × 1020 ions/m2, and the corresponding irradiation
damage (displacement per atom, dpa) was calculated by SRIM 2008) to be 6.8 dpa [3].
Figure 1 shows the typical TEM image and selectedarea electron diffraction (SAED) patterns of the(a)irradiated C-SiC coaxial nanotube. According tohigh-resolution (HR) TEM image, the amorphous
structure is observed in the SiC layer of C-SiC coaxial
nanotube. The orientation of the graphitic shells in the
C-SiC coaxial nanotubes before ion irradiation wasalmost parallel to the length directions of the nanotubes.
However, HR-TEM observation and SAED result
indicate that the orientation of graphitic shells after ion
irradiation changes such that they are completely parallelto the radial directions of the nanotubes. The graphite
200 nm(002) spots in the SAED image are clearly observed(b) SiC layereven after ion irradiation up to 6.8 dpa, indicating thecertain crystallinity of the carbon layer in the C-SiC
coaxial nanotube. In this study, the multi-walled carbon
nanotubes with graphitic shells completely oriented
parallel to the radial direction of the nanotube insideamorphous SiC nanotube was synthesized by ion
Carbon layer
irradiation technique for the first time [3]. Such amulti-walled carbon nanotubes with this new structure
may be expected to find new applications.
5 nm[1] T. Taguchi et al. J. Am. Ceram. Soc. 88, 459 (2005).
[2] T. Taguchi et al. Physica E 28, 431 (2005).
[3] T. Taguchi et al. Carbon 95, 279 (2015).
Corresponding Author: T. Taguchi
Tel: +81-70-3943-3446,
E-mail: taguchi.tomitsugu@qst.go.jp- 58 -

Fig.1: (a) Low-magnification TEM
image and SAED pattern, and (b)high-resolution TEM image of new
structured
multi-walledcarbonnanotube inside SiC nanotube.

1P-17
Purification of high purity semiconducting single-wall carbon nanotubes
with a large diameter of 1.9 nm by gel filtration○Boanerges Thendie1, Haruka Omachi1, Jun Hirotani2, Yutaka Ohno2, Ryo Kitaura1,
Yasumitsu Miyata3, and Hisanori Shinohara1
1

Department of Chemistry and Institute of Advanced Research, Nagoya University, Nagoya, 464-8602

2

Department of Quantum Engineering, School of Engineering, Nagoya University, Nagoya, 464-8603
3

Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397

Single-wall carbon nanotubes (SWCNTs) have broad diversities on its structure andproperties which should be separated and purified prior to application such as electronic devices.
Gel filtration is one of the most powerful separation methods of SWCNTs, capable of purify
SWCNTs based on electronic-type, diameter, and length. However, although many satisfactory
reports on gel filtration of SWCNTs have been published, few to no report was found on the
successful electronic-type purification of SWCNTs with diameter larger than 1.4 nm.
Here, we demonstrate the purification of semiconducting SWCNTs (s-SWCNTs) with adiameter of as large as 1.9 nm by using gel filtration. Combination of increased column
temperature and elution with gradient concentration are critical for the purification. Opticalabsorption and Raman spectra indicate the high purity s-SWCNTs with diameter around 2.0 nm,
which was confirmed by transmission electron microscopy (TEM) images as shown in fig. 1.

Figure 1 (a) Raman spectra of the purified s-SWCNTs fraction using 3 different laser excitation: 2.54, 1.96, and1.58 eV. No peak of m-SWCNTs (gray shaded) was observed. (b) TEM images and diameter distribution of thepurified fraction showing s-SWCNTs with large diameter of 1.9 nm.
Corresponding author: Hisanori Shinohara
Tel: (+81) 52-789-2482, Fax: (+81) 52-747-6442, E-mail: noris@nagoya-u.jp- 59 -

1P-18Single-walled carbon nanotube synthesis using Ru catalysts
by alcohol catalytic chemical vapor deposition in high vacuumżTakayuki Fujii1, Hoshimitsu Kiribayashi1, Seigo Ogawa1, Takahiro Saida2,
Shigeya Naritsuka1, Takahiro Maruyama2
1

Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi,
Tempaku, Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, 1-501 Shiogamaguchi, Tempaku,
Nagoya 468-8502, Japan

Single-walled carbon nanotube (SWNT) have various excellent electricalcharacteristics for applications to electronics. So far, we have conducted SWNT growth using
platinum-group metals as catalysts. Previously, we have reported SWNT growth using Pt andRh catalysts [1] [2]. These catalysts are one of the most expensive metals, which are
disadvantages for practical applications. In this study, we focused on Ru as catalysts for
SWNT growth. Although Ru belongs to platinum-group elements, it is not so expensive,
compared to Rh and Pt. Using Ru as a catalyst, we succeeded in growing SWNTs. In addition,effects of feedstock gas pressure on SWNT growth was investigated.
Al2O3 was deposited on SiO2/Si substrates by rf sputtering. Ru catalysts were
deposited on them using a pulsed arc plasma gun, and they were used as substrates for SWNT
growth. The growth temperature was 700 ºC, and the ethanol pressure was varied between
1×10-4 and 1×10-2 Pa. The grown SWNTs were characterized by scanning electron
microscope and Raman spectroscopy.
Fig. 1 shows the Raman spectra of SWCNTs grown from Ru catalysts at 700 ºC
under an ethanol pressure of 1×10-4 , 1×10-3 and 1×10-2 Pa, when the catalyst thickness was
0.2 nm. At 1×10-2 Pa, strong RBM peaks and G-band peaks appeared, indicating that SWNT
yield was enhanced under this ethanol pressure. Our results show that Ru is useful for growthof SWNT.

Fig. 1 Raman spectra of SWNTs grown at 700 ºC from Ru catalysts under an ethanol pressureof 1×10-4, 1×10-3 and 1×10-2 Pa. Ru catalyst film thickness was 0.2 nm.
[1] T. Maruyama et al. Carbon 96 (2016) 6.
[2] A. Kozawa et al. Diamond Relat. Mater. 63 (2016) 159.
Corresponding Author: T. Maruyama
Tel: +81-52-838-2386, Fax: +81-52-832-1179, E-mail: takamaru@meijo-u.ac.jp- 60 -

1P-19Possible mechanism for selective separation of semiconducting
single-walled carbon nanotubes○Keita Ozono1, Fumiyuki Toshimitsu1, Naotoshi Nakashima1, 2
1 Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744,

Motooka Nishi-ku Fukuoka, Japan
2 WPI-I2CNER, Kyushu University, 744, Motooka Nishi-ku Fukuoka, Japan

Single-walled carbon nanotubes (SWNTs) have superior physical and electronic properties
and are promising nanomaterials for the next generation. However, SWNTs have two major
problems; one is that SWNTs can’t dissolve in solvents, and another is that they aresynthesized as mixtures of semiconducting- and metallic-SWNTs. In order to use them for many
applications, their efficient chirality separation is highly demanded.
Several efficient sorting methods including gel chromatography method [1], density
gradient ultracentrifugation method [2,3], use of oligo DNA [4], aqueous two-phase extraction
method [5], and use of dynamic coordination[6]
andhydrogenpolymer-based
supramolecular chemistry [7] have beenreported.
We have already reported that a flavinderivativecanselectively
solubilize
semiconducting-SWNTs from the pristine
SWNTs [8]. At this meeting, we focus onmechanism for this separation by means of Fig 1: Scheme of semiconducting-SWNTs
experiments and MD simulation.
separation using flavin derivative.
.
This poster is based on results obtained from a project commissioned by the New Energy
and Industrial Technology Development Organization (NEDO).
[1] H. Liu, D. Nishide, T. Tanaka, H. Kataura, Nat. Commun. 2, 309 (2011).
[2] M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, M. C. Hersam, Nat. Nanotechnol. 1, 60 (2006)[3] Ghosh, S.; Bachilo, S. M.; Weisman, R. B. Nat. Nanotechnol. 5, 443 (2010)[4] Zheng, M.; Jagota, A.; Strano, M. S.; Santos, A. P.; Barone, P.; Chou, S. G.; Diner, B. A.; Dresselhaus, M. S.;
McLean, R. S.; Onoa, G. B.; et al., 302, 1545 (2003)[5] Gui, H.; Streit, J. K.; Fagan, J. a.; Hight Walker, A. R.; Zhou, C.; Zheng, M. Nano Lett. 15, 1642 (2015)[6] Toshimitsu, F.; Nakashima, N. Nat. Commun. 5, 5041 (2014)[7] Toshimitsu, F.; Nakashima, N. Sci. Rep. 5, 18066 (2015)[8] Y Kato, M Fukuzawa, F Toshimitsu, N Nakashima, Chem. Lett. 44, 556 (2015)

Corresponding Author: Naotoshi Nakashima
Tel: +81-92-802-2840, Fax: +81-92-802-2840,
E-mail: nakashima.naotoshi.614@m.kyushu-u.ac.jp- 61 -

1P-20STM/STS studies on Europium nanowires
encapsulated in carbon nanotubes○Terunobu Nakanishi1, Ryo Kitaura1, Shoji Yoshida2,
Osamu Takeuchi2, Hidemi Shigekawa2 , Hisanori Shinohara1
1

Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya,464-8602, Japan
2
Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, 305-8573, JapanThe discovery of carbon nanotubes (CNTs) and their fascinating properties have ignitedintense research interests on one-dimensional nanosystems. Although metal nanowires, whose
diameter is one to several atoms, are one of the most ideal one-dimensional nanosystems, thepreparation and characterization of these have been difficult because of their high reactivity
towards air. Previously, we have reported the synthesis of Europium (Eu) nanowires in theinterior space of CNTs and characterization of their structure with transmission electron
microscopy.[1-2] Here, we present the preparation and investigation of spatially-resolved
electronic structure of Eu nanowires encapsulated in CNT (EuNW@CNT) by scanningtunneling microscopy/spectroscopy (STM/STS).
EuNW@CNT was synthesized by the direct
nano-filling method[1] and dispersed in THF withammonium carbonate by sonification. Figure 1
shows a STS spectrum of EuNW@CNT. At thelocation where EuNW are expected to exist (theposition ranging from 3 to 15 nm in Fig. 1), we
observed that the conduction and valence bands
are shifted downward and that bandgap shrinks
with the appearance of two localized states in the
gap region. These drastic change in electronic
structure indicates that EuNW strongly interact

Figure1. STS spectrum of EuNW@CNT.
dI/dV mapping taken along CNT axis. The
left side is empty CNT area and right side
is EuNW encapsulated area.

with CNT, presumably, via the charge transferfrom EuNW to CNT. [3] The results obtained inthis work strongly suggest that one can drastically change CNT’s band structures byencapsulation of metal atomic wires.
[1] R.Kitaura et al. Angew.Chem.Int.Ed. 48, 8298, (2009).
[2] R.Nakanisihi et al. Phys. Rev. B, 86, 115445, (2012).
[3] J. Zhou et al. J. Phys. Chem. C, 114, (2010),
Corresponding Author: H. Shinohara
Tel: +81-52-789-2477, Fax: +81-52-747-6442, e-mail: r.kitaura@nagoya-u.jp and noris@nagoya-u.jp- 62 -

1P-21
Two-step growth of graphene directly grown on sapphire substrateby non-catalytic alcohol CVD

1żYuki Ueda1, Jumpei Yamada1, Kyosuke Fujiwara1, Daichi Yamamoto1
Takahiro Maruyama2, and Shigeya Naritsuka1
Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Chemical vapor deposition (CVD) with metallic catalyst is a conventional method
for growing high-quality, large-area graphene. However, it is necessary to transfer thegraphene from the surface of the catalyst to a certain substrate for the fabrication of graphenedevices. The transfer process is not only complicated but also degrades their performances,such as electron mobility. Therefore, a direct growth of graphene on a substrate is strongly
required.
Crystal quality of graphene is in general improved by increasing growth temperature.
However, a high-temperature of growth is difficult in a direct growth of graphene on sapphire
because C atoms are significantly etched by O atoms decomposed from the substrate.
Therefore, we adopted two-step growth that consists of a low-temperature growth of aprotection layer for covering the sapphire substrate and a high-temperature growth for ahigh-quality graphene.
A c-plane sapphire was used as a substrate. Ethanol was supplied to the growthchamber as a source material with bubbled by N2 gas flow of 7 sccm. And, N2 gas was flown
at 600 sccm as a carrier gas. In a two-step growth, almost 1 layer of graphene was firstly
grown at 1180 oC for 1h, and a high-temperature growth was performed at 1400 oC for 1h. H2
gas was also flown at 10 sccm during the high-temperature growth. A reference sample wasgrown in a one-step at 1180 oC for 2h.
Figure 1 shows the surface AFM image of reference sample. Many triangular islands,
which are found as a graphitic structure by Raman spectroscopy, are observed. Excess
supersaturation are thought as a cause, which was brought by the suppression of etching effectof O atoms decomposed from the sapphire substrate after the substrate was covered with agrown graphene. Figure 2 shows (a) a surface AFM image and (b) a Raman spectra of thesample grown by two-step growth. Though graphene wrinkles are observed, the triangularislands are not observed. D/G ratio of 0.3 and a narrow FWHM of G¶ peak of 58 cm-1 suggestthat a high-quality multilayer graphene was grown by the two-step growth.

Fig. 1. Surface AFM image ofreference sample

Fig. 2. Sample grown by two-step growth(a) Surface AFM image and (b) Raman spectra

Corresponding Author: Y. Ueda Tel: +81-52-832-1151 E-mail: 153434003@ccalumni.meijo-u.ac.jp[Acknowledgment] This work was supported in part by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011.

- 63 -

1P-22
CVD growth of graphene using boron nitride as growth templates
111‫ۑ‬Shun Ogawa , Yu Kobayashi , Yutaka Maniwa , Yasumitsu Miyata
1

1,2

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
2
JST, PRESTO, Kawaguchi 332-0012, Japan

Development of a method to produce structure-controlled graphene nanoribbons(GNRs) has been an important issue to investigate their unique electronic and magnetic
properties. In the previous studies, GNRs have been produced by polymerization oforganic molecule, anisotropic growth/etching of graphene, and so on. In contrast, wehave focus our attention on heteroepitaxial growth of GNRs because of its shapecontrollability. For example, when hexagonal boron nitride (hBN) is grown from theedge of graphene grains, the hBN films tend to form a ribbon-like shape at an earlystage of growth [1]. If graphene were grown from the edge of hBN, GNRs could beformed at an early stage of graphene growth (Fig. 1a). To test this approach, we haveinvestigated chemical vapor deposition (CVD) growth of graphene using hBN grains as
growth templates.
Monolayer hBN grains were grown on Cu foil by CVD at 1075 |C using ammonia
borane as a precursor. After the hBN growth, graphene was grown on the same Cu foil
by supplying methane at high temperature (~1000 | C). The grown films weretransferred on SiO2/Si substrates for Raman measurement. Interestingly, we found thatgraphene were preferentially grown around the triangle-shaped hBN grains as revealedby 2D-band Raman intensity mapping (Fig. 1b,c). These results suggest that hBN grains
can act as growth template during graphene CVD, and could provide a possible way to
produce structure-controlled GNRs.

Fig. 1(a) Schematic illustration of epitaxial growth of graphene from the edge of hexagonal boron nitride.
(b) Optical (left) and Raman (rigtht) images of CVD-grown graphene on a SiO2/Si substrate. Gray
indicates the Raman intensity of 2D-band. (c) Raman spectra of CVD-grown graphene at different
positions in Fig.1b.㻌 㻌 㻌 㻌㻌㻌㻌[1]㻌Y. Miyata, et al., Appl. Phys. Express, 5, 085102 (2012)
Corresponding Author: Yasumitsu Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp㻌- 64 -

1P-23Graphene FET of high photosensitivity using schottky diodebetween graphene and n-type silicon‫ۑ‬Shiho Kobayashi, Yuki Anno, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai, Osaka 599-8531 Japan

Id (P
P A)

Acknowledgements This work was partially supported
by KAKENHI Grant Number 25286010, 16H00920 and
16H06504. Corresponding Author: S. Kobayashi, Tel: +81-

72-254- 9261, E-mail: s_kobayashi-4@pe.osakafu-u.ac.jp- 65 -Ig (nA)

Graphene/semiconductor heterojunction is one of emerging fields of recent photoelectronic
devices due to the low light absorption of graphene of ~2.3%, which is appropriate for thewindow layer of photosensor. Here, we demonstrate the photosensor consisting of graphenefield effect transistor (G-FET)/Si heterojunction.
Figure 1 shows the schematic image of the G-FET with the Si depletion layer gate. The
channel length and width are 4 and 2 Pm, respectively. Unlike common back-gate G-FET, weremove the 300 nm thick SiO2 layer underneath of
the graphene channel by buffered HF. Note that theresistivity of the n-type Si substrate used in thisexperiment is 0.1~100 :cm, so that one can expectthat the formation of depletion layer at the interface
between the Si and graphene at Vg > VDirac. Fig. 1 G-FET with Si depletion layer gate.
Additionally, thin SiO2 layer was formed after the
1.5
3.6
BHF etching.
3.4
Figure 2 shows the transfer characteristics under
1
Photo
3.2
dark and light irradiation (17.9 pW, 510 nm). The
0.5
3
difference between the drain currents (Id) under dark0
and illumination are clearly observed at Vg > VDirac
2.8-0.5
corresponding to the reverse bias for n-Si/graphene
2.6
Dark
-1
interface. As shown in Fig. 2, the gate leak current Ig
2.4~ 1 nA is observed at the Vg < VDirac, which-1.5
2.2-1.2 -0.8 -0.4 0 0.4 0.8 1.2
corresponds to the flat band through accumulation
Vg (V)
region of Si (forward bias for n-Si/graphene Fig. 2 Transfer characteristic of G-FET withinterface) as shown in Fig.3. In this case, the gate the Si depletion layer gate (Vd=50 mV). The
capacitance Cg is only formed by the thin native gate leak current Ig is also plotted as aoxide of Si. At Vg > VDirac under dark condition function of Vg.
corresponding to the reverse bias for n-Si/graphene,
Dark
Photo
the thick depletion layer should be formed, which
results in the smaller Cg and low carrier concentrationin graphene channel. Under the light irradiation, theVG > VDirac
VG > VDiracthickness of depletion layer is thinner than that at
dark condition because of the photoexcited carrier in
Si and thus the inversion of n-Si. As a result,
VG=VDirac
sufficient charge is induced in the graphene channel,
which contributes to the photoresponse observed inthis study.
VG<VDirac
Fig. 3 Band diagram of G-FET with the Si
depletion layer gate.

1P-24
Catalytic properties of non-metal and platinum supported surface-modified
nanocarbon materials○Hironori Ogata1,2,3, Haruhiko Yoshitake1, Yutaka Sato1, Tomoaki Nishimura4, Zhipeng
Wang5, Shingo Morimoto5, Yoshio Hashimoto5, Morinobu Endo5
1

Graduate School of Sci. and Engin., Hosei University, Koganei, Tokyo, 184-8584, Japan
Faculty of Biosci. and Applied Chem.,Hosei University, Koganei, Tokyo, 184-8584, Japan
3
Research Center Micro-Nano Technol., Hosei University, Koganei, Tokyo 184-0003, Japan
4
Research Center of Ionbeam Technol., Hosei University, Koganei, Tokyo, 184-8584, Japan
5
Institute of Carbon Science and Technology, Shinshu University, Nagano 380-8553, Japan

2

Nanocarbon materials are promising materials for various applications. In recent years,
various progress in manufacturing and functionalizing nanocarbon materials has been made toachieve the control of bulk and surface properties. Carbon nanosheets (CNSs), also known ascarbon nanowalls which can be described as graphite sheet nanostructures with a large
number of edges that are composed of stacks of planar graphene sheets standing almost
vertically on the substrate [1]. Direct methanol fuel cells (DMFCs) are one of the mostpromising transportable power sources which can be used in mobiles, laptops, and small
power generation[2]. The basic operation principle of DMFCs involves methanol oxidationand oxygen reduction on the precious metal catalysts, which are loaded on the support
surfaces. As is well-known, the dispersion of Pt-based alloys on carbon supports as well as
catalyst particle size and shape plays a dominant role in the electrochemical performance forfuel cells[3]. We have explored the electrocatalytic properties of Pt-based nanoparticles
supported on the carbon materials by electrodeposition systematically.
In this study, we investigated both the effects of surface modification by ion-irradiation or
the radio frequency(RF) O2 plasma treatments on the surface morphology and oxygen
reduction reaction activity of CNSs. We also investigated the dispersion states andelectrocatalytic properties of Pt-based nanoparticles supported on the surface modified CNSs
by electrodeposition method. The ion beam accelerated with carbon ion source with 200 keV
and 400 keV were irradiated to the carbon materials with 1 ×1013, 1 × 1014, 1 × 1015 ions/cm2.
The detailed results on the morphology, oxygen reduction reaction activity and dispersion
state of Pt-based nanoparticles and their electrocatalytic performance for methanol oxidation
will be presented.
References:[1]M. Hiramatsu, M. Hori, Carbon Nanowalls: Synthesis and Emerging Applications,
SpringerWien, New York, 2010.
[2]J.M.Sieben et al., J. Appl. Electrochem.38(2008)483-490.
[3]Zhipeng Wang, Mao Shoji and Hironori Ogata, Appl. Surf. Sci.259(2012)219-224.
[4]M.Tsai et al., ElectroChem. Commun.8(2006)1445-1452.
[5]S.H.Ahn et al., Chem. Eng .J. 181-182(2012)276-280.
[6]K. Waki et al., Energy &Environ. Sci.7(2014)1950-1958.
Corresponding Author: Hironori Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 66 -

1P-25Control of nonlinearity of suspended graphene resonatorby standing wave of lightżTaichi Inoue, Yuki Anno, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai 599-8531, Japan

Intensity (a. u.)

Intensity (a. u.)Graphene mechanical resonator (G-MR) is promising candidate for highly sensitive massand force sensor because of extremely low mass and high young’s modulus. Nonlinearity
control is one of key techniques to realize mode exchange of vibration toward practicalapplications. Here, we demonstrate nonlinearity control of the G-MR by using optical effect.
Monolayer graphene was transferred onto the SiO2(a)(300 nm)/Si substrate and was etched by O2 plasma toform the graphene stripe with the width of 2 Pm. Next,
the SiO2 layer underneath of the graphene stripe wasetched by buffered HF, and dried by using supercriticaldrying. As shown in Fig. 1(a), the suspended graphene
2 Pm
stripe with the length of 3 Pm was successfully
fabricated. Resonance properties of the G-MR were(b)measured by optical detection as shown Fig.1 (b), where
CW lasers (406 or 521 nm) were used not only to detect
the vibration but also to control the nonlinearity. The
different detection lasers form the different standing
wave profiles between the substrate and the graphene,
which induce the different force acting on the G-MR.
Note that the G-MR was actuated by photothermal
method using 660 nm laser modulated with a certain
frequency by illuminating the G-MR support as (c)O=406 nmschematically shown in Fig. 1(b).
LD power
Q
Figures 1(c) shows the resonance curves using 406
(PW)
35.6
5.1
nm laser. The peak frequency shifts to lower frequency
33.4
at higher CW laser power, which is so called optical
4.69
27.5
4.27
softening. Additionally, the Q-factor increases with
8
9
10
11
12
increasing the CW laser power. This implies that the 406
Frequency (MHz)nm laser irradiation works as positive feedback for the(d)O=521 nmoscillation, which results in the increase of the vibration
LD power (PW)
amplitude. On the contrarily, in the case of 521 nm laser
13.1
shown in Fig. 1(d), the vibration amplitude increases
11.1
with decreasing the CW laser power. The stronger
9.14
nonlinearity is observed at lower laser power. The
8
9
10
11
12
standing wave profile enhances the nonlinearity of theFrequency (MHz)G-MR. Thus, we successfully demonstrate the nonlinear Fig. 1 (a) SEM image of the grapheneresonator. (b) Measurement setup. (c)control of G-MR using the standing wave of the light.
Acknowledgements This work was partially supported by
KAKENHI Grant Number 25286010, 16H00920 and
16H06504. Corresponding Author: T. Inoue, Tel: +81-72-2549261, E-mail: t_inoue-4@pe.osakafu-u.ac.jp- 67 -and (d) are CW laser power
dependences of frequency responsesof G-MR under the illumination of
406 and 521 nm, respectively.

1P-26
All-graphene oxide device with tunable supercapacitor andbattery behaviour by the working voltageżChikako Ogata1,2, Ruriko Kurogi1, Kazuto Hatakeyama1,2, Takaaki Taniguchi3,
Michio Koinuma1, Yasumichi Matsumoto1
1

Graduate School of Science and Technology, Kumamoto University,
2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555, Japan
2
Research Fellow of Japan Society for the Promotion of Science (JSPS Research Fellow)
3
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute forMaterials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Voltage / V

Current / A

As hydrated Graphene Oxide (GO) is simultaneously a good ionic conductor and anelectrical insulator, GO can be used as both a separator and electrolyte. Moreover, reduced
GO (rGO) is suitable for electrode materials owing to its high electrical conductivity and highspecific surface area. Based on these considerations, the rGO/GO/rGO structure is expected toperform as an electrical device. In this study, we demonstrate a new type of rGO/GO/rGO
device that functions as both a supercapacitor (Graphene Oxide Supercapacitor: GOSC) and abattery (Graphene Oxide Redox Battery: GORB), depending on the working voltage [1].
The GO was prepared by Hummers’ method. The rGO/GO/rGO device was fabricated byphotoirradiation of both surfaces of the GO paper. The electrochemical performance of thisdevice was investigated using CV, galvanostatic charge/discharge measurements and EIS.
The rGO/GO/rGO device operated as a proton-type supercapacitor at working potentials as
high as 1.2 V (Fig. 1). The GOSC exhibited high specific area capacitance of 2 mF cmí2 evenwhen operated at high scan rates of 1,000 mV sí1. We speculate that the charge storage
mechanism of GOSC resulted from (1) proton
800
conductivity and (2) polarized/separated watermolecules in the interlayer spacing of the nanoscale
400
GO. At potentials greater than 1.5 V, this0rGO/GO/rGO device behaved as a battery (Fig. 2).
In particular, the GORB, which had a plateau
GOSC-0 h-400
potential of approximately 0.75 V and coulombic
GOSC-1 h
GOSC-3 h
GOSC-6 hefficiency of approximately 53%, exhibited excellent
-800
0
0.2
0.4
0.6
0.8
1.0
battery behavior at a charge voltage of 1.7 V. The
Voltage / V
Fig. 1 CV profiles acquired at a scanrGO/GO/rGO device, which comprises two different
rate of 0.3 V sí1 for GOSC preparedrGO electrodes with redox couples based on two
using various photoreduction times.
different functional groups with dissimilar reaction
1.6
potentials, functioned as a battery. We deduced the
GORB-0 h
GORB-1 hfollowing two hypotheses for the redox mechanism
1.2
GORB-3 h+í
GORB-6 hof the GORB: (1) cathode: C=O + H + e ļ C–OH;+
anode: CH (defect) + CO2 ļ 2C=O (or C–O) + H +0.8
eí; or (2) cathode: 4H+ + 4eí + O2 ļ H2O; anode:
0.4
CH (defect) + CO2 ļ 2C=O (or C–O) + H+ + eí.
[1] C. Ogata et al. Chem. Commun. 52, 3919-3922 (2016).
Corresponding Author: C. Ogata
Tel: +81-96-342-3659, Fax: +81-96-342-3659,
E-mail: c-ogata@kumamoto-u.ac.jp

0

0

5

10

15 20 25
Time / sec

30

35

Fig. 2 Discharge profiles of GORB
prepared with various photoreduction
times at 0.05 mA.

- 68 -

1P-27
Suppression of Electrical Conductivity Deterioration of Cu Nanowire by
Coating 2D-layered Materials○Nguyen Thanh Cuong1, Susumu Okada2
1

International Center for Young Scientists, National Institute for Materials Science (NIMS),
Tsukuba 305-0044, Japan
2
Graduate school of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan

Copper is the crucial material for high efficient interconnections in the semiconductor
integrated circuits. Recent advances in the miniaturization progress of electronic devices
require the highly conductive Cu wire interconnect at the nano size. Recently, by usinggraphene as coating layer, the electrical conductivity of Cu nanowires has been enhanced by
15 percent than that of pristine Cu nanowires [1]. However, the physical origin of this highconductivity of graphene-coated Cu nanowires is still unclear. In this work, we explore theelectronic structure and transport properties of hybrid-structure between Cu thin films and2D-layered materials coatings such as boron-nitride and graphene, based on density functional
theory and semi-classical Boltzmann transport theory simulations. We find that the uniqueelectrical conduction of graphene-coated Cu nanowire is ascribed to the Shockleysurface-states of Cu surfaces. Under realistic environment, the intrinsic Shockleysurface-states of Cu surfaces are destroyed by oxygen gas adsorption that lead to thesubstantial surface scattering decreasing the electrical conductivity. In sharp contrast, these
Shockley surface-states of Cu surfaces are preserved by the boron-nitride or graphene
coatings, owing to the weak interaction between Cu surface and boron-nitride or graphene
layer. Furthermore, the Shockley surface-states with quasi-2D free-electron characteristics
exhibit a large conductivity of 1.62×107 (Ω-1m-1) at room temperature. These results indicate
the important role of the Shockley surface-states on electrical conductivities of Cu nanowires.
Therefore, our work suggest the possibility of using ultra-thin 2D-layered materials:
boron-nitride, graphene, etc., as coatings for Cu interconnect in high-performance electronic
devices.
[1] R. Mehta, S. Chugh and Z. Chen, Nano Lett. 15, 2024 (2015).
Corresponding Author: N. T. Cuong
Tel: +81-29-851-3354#4041
E-mail: NGUYEN.Thanhcuong@nims.go.jp- 69 -

1P-28
Evaluation of the electrochemical capacitance of graphite oxide electrodeprepared by the electrochemical oxidation/reduction cycleżKeisuke Awaya1, Kazuto Hatakeyama1, Michio Koinuma1, Yasumichi Matsumoto1
1

Graduate School of Science and Technology, Kumamoto University
2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan

Graphite oxide (GtO), which is prepared by oxidation of the pristine graphite, has beenstudied since it showed unique properties (high proton conductivity, hydrophilicity, negative
charges on its surface, etc.). Although many chemical oxidation methods have been reported
and are used most popularly, they require not only strong acids or oxidants but also dragged
reaction time. Therefore, it is generally difficult to control the oxidation degree of graphite.
On the other hand, the electrochemical method offers a facile way to control it by operating
the applied oxidation potential and oxidizes the electrode directly. The rGtO, reduced GtOelectrode, showed high electrochemical capacitance, and it became much higher when theelectrode was electrochemically oxidized and reduced repeatedly [1],[2].
Glassy carbon electrode (BAS Ltd.) was employed as the working electrode and various
nitrates were chose as electrolyte in aqueous solution (0.1 M NaNO3+NaOHaq, 0.1 M
NaNO3aq, 0.1 M NH4NO3aq, 0.1 M HNO3aq). Firstly, the electrode was immersed intoaqueous solution and were oxidized electrochemically for 5 minutes. And then cyclic
voltammogram was measured at the range of from -0.2 V to +0.7 V in 0.1 M Na2SO4aq. The
subsequent reduction process was carried out in the same way. The potential value of +2.00 V
and -1.10 V in 0.1 M NaNO3aq was set as the standard, the applied potentials in other solution
were estimated by the Nernst equation.
The electrochemical capacitance of GtO/rGtO electrodes were showed in Fig. 1. The
capacitance showed high values after every reduction processes (denoted as rnGtO in Fig. 1,
where n is re-reduction cycle number) and indicated the maximum in 0.1 M NH4NO3aq and
0.1 M NaNO3aq, 119.6 mF/cm2 was observed after 16th reduction. The reaction sites on theelectrode were easily eroded away and its
surfacearea
increased
everyelectrochemical oxidation/reduction cycle.
Thus, its capacitance, derived fromelectric double layer, became higher inaccordance with the augmentation ofoxidation/reduction cycle. XPS analysis
of rGtO revealed that the amount of CH
defect also increased with the cycles
number. Therefore, it was suggested thatCH defect on the electrochemical
reduced rGtO surface influenced upon its
Fig. 1 TheFi
Th electrochemicall t h i l capacitanceit
off GtO/rGtO
GtO/ GtO
electrochemical capacitance.
electrode prepared by electrochemical oxidation/reduction
cycles[1]H. Tateishi et al. Carbon 76, 40-45 (2014)[2]H. Tateishi et al. J. Electroanal. Chem. 704, 233-241 (2013)
Corresponding Author: K. Awaya
Tel: +81-96-342-3659, Fax: +81-96-342-3659,
E-mail: 164d8302@st.kumamoto-u.ac.jp- 70 -

1P-29Contrast mechanisms of the fluorescence microscopy that allows direct
observations of nanocarbons in solution○Hikaru Sato, Yutaka Matsuno, Yu-uya Sato, Masahito Sano
Department of Organic Materials Sci., Yamagata University, Yonezawa 992-8510, Japan
We have developed a novel microscopy that visualizes graphene and graphene oxide (GO)dispersed in solution. In order to realize observations, we need to have a very faint illumination
for compensating the “shooting against the light source” condition, additional contrast
mechanisms besides the small absorption, and orientations facing the larger surface toward an
objective lens. These conditions are satisfied simultaneously by dispersing nanocarbons in afluorescent dye solution near a solid surface. The fluorescence emitted by dye molecules is used
as a backlight illumination for the new microscope. Its intensity can be optimized by adjusting
the dye concentration and manipulating the excitation beam. Modulations of fluorescence byinteractions with nanocarbons give additional contributions to the contrast. Naturally occurring
convection current near the solid surface orients graphene sheets parallel to the surface.
Experimentally, a nanocarbon solution is mixed with a dye solution, and is placed on a glass
plate. The excitation beam enters the glass from below and irradiates only a region within a few
hundred micrometers from the glass/solution interface. Thus, the medium surrounding agraphene sheet fluoresces, but its total intensity is controlled to stay low. Due to the dim
illumination, a small change in the light intensity entering the objective lens from a GO sheet
causes the sheet to appear either dark or bright relative to the surrounding medium. There areseveral different mechanisms for this change.
A nanocarbon appears dark if fluorescence around it is quenched by Dexter electron transfer
or Förster resonance energy transfer (FRET). The r-4 dependence of FRET for moleculegraphene suggests that the dye molecules within 30 nm from a graphene sheet can be quenched.
Because FRET efficiency depends on a spectral overlap of the object absorption and the dye
emission, it is possible to image an object selectively by choosing an appropriate dye.
The same GO that gives a dark image may appear bright under different conditions.
Fluorophore properties of many dyes depends on local environments such as solvent, pH,
polarity, hydrophobicity, temperature, and concentration. For instance, rhodamine-b (Rh-b)
undergoes chemical conversion from fluorescent zwitterion form to colorless lactonic form inaprotic solvents. Rh-b also forms non-fluorescent H-aggregate as well as fluorescent Jaggregate in water. These states are at equilibrium, which can be shifted by an addition of protic
solvents or some solids. When GO is added to NMP solution of Rh-b, a GO sheet appears bright
due to either adsorption of Rh-b in a coloring form or shifting the equilibrium by providing
proton though hydroxyl groups. Contrarily, graphene has no such group and atomically flat
surface, resulting in a dark image. Rh-6G, which cannot be
converted into lactonic form but still form H-aggregate, gives
bright images of GO due to J-aggregate formation.
Zwitterion
In conclusion, it is possible to characterize chemical natureof each GO sheet by analyzing the contrast and fluorescence
spectra. These contrast mechanisms indicate that various
Lactonic
substances other than nanocarbons become observable by the
new microscopy.
Corresponding Author: M. Sano
Tel: +81-238-26-3072 E-mail: mass@yz.yamagata-u.ac.jp- 71 -

1P-30
Metal Permeation into Multi-layered Graphene Oxide Film
○Michio Koinuma1, Chikako Ogata1,2, Yasumichi Matsumoto1
1

Graduate School of Science and Technology, Kumamoto University,
2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555, Japan
2
Research Fellow of Japan Society for the Promotion of Science (JSPS Research Fellow)
Strong adhesion of metals onto graphene oxide (GO) is highly important forbuilding suitable contacts when GO or reduced GO (rGO) is used in electronic andelectrochemical devices. Moreover, the metal/graphene oxide (M/GO) interface itself
sometimes acts as a catalytic site. The content of oxygenated functional groups at thisinterface is expected to be strongly affected by the attachment of metals. Thus, understanding
M/GO interfaces at atomic and/or electronic scale may bring about the development of newelectronic/spintronic, photochemical, and electrochemical devices because their properties areaffected by defects and the content of oxygenated functional groups. Here, the unique
phenomenon of metal permeation into GO paper bulk (multi-layered GO film) from an M/GOinterface is reported.[1] We also demonstrate the importance of the CH defects on theelectrochemical capacitance and the dependence of the differences in the functional groups ofthe rGO samples, particularly the CH defects, on the reduction method.[2]Metal permeation at M/GO interfaces was observed at 25 °C, where the metals were
deposited onto the surface of GO paper by sputtering. In the cases of M = {Cu, Ag, Ni}, themetals were oxidized to the corresponding ions (Cu2+, Ag+, and Ni2+) by redox reactions
involving the reduction of GO immediately after metal deposition. These ions then quickly
permeated through the interlayers into the GO paper bulk. These reactions and fast
permeation occurred with ease under humid conditions but with difficulty under vacuum. Au
and Pt atoms also permeated the GO paper bulk, although the permeation rates were low. In
these cases, abundant defects and/or edges in the GO paper acted as permeation sites. Other
metals are also likely to be able to permeate GO paper bulk as atoms. Consequently, GO
paper interlayers have unique properties allowing water, metal ions and other atoms topermeate them while providing a shield against gas molecules. These findings are expected toprovide important information about GO used in various (especially electrochemical) devices,where ionic movement potentially affects the functionalities.
[1] C. Ogata et al. Scientific Reports 4, doi:10.1038/srep03647[2] M. Koinuma et al. Chem. Lett.42 924-926 (2013).
Corresponding Author: M. Koinuma
Tel: +81-96-342-3660, Fax: +81-96-342-3659,
E-mail: koinuma@chem.kumamoto-u.ac.jp- 72 -

1P-31
Enhanced terahertz-wave absorption in monolayer graphene via
evanescent wave coupling
Yoichi Harada1,2, M. Shoufie Ukhtary3, Minjie Wang1, Sanjay K. Srinivasan1,4,
Eddwi H. Hasdeo3, Ahmad R. T. Nugraha3, Weilu Gao1, Yuji Sakai5,
Riichiro Saito3, Junichiro Kono1
1

2

Department of Electrical and Computer Engineering, Rice University,
Houston, Texas 77005, U.S.A.

Department of Engineering, Hokkaido University, Sapporo 060-8628, Japan
3

4

Department of Physics, Tohoku University, Sendai 980-8578, Japan

Department of Physics and Nanotechnology, SRM University, Kancheepuram
District, Chennai, Tamil Nadu, 603203, India
5

Institute of Laser Engineering, Osaka University, Suita, 565-0871, JapanThe unique band structure and gate tunability of graphene are expected toresult in novel high-frequency and optical phenomena [1]. However, due to theinherently small interaction lengths in monolayer systems, light absorption ingraphene is generally small, and simple and robust schemes are being sought forenhancing absorption – particularly, in the terahertz (THz) frequency range.
Here, by using a recently proposed total internal reflection (TIR) geometry [2],we demonstrate significant enhancement of THz-wave absorption in monolayer
graphene. Our scheme allows the incident THz
beam to be reflected by graphene four times atvarying incidence angles, both below and above
the critical angle for TIR. We observed
extremely large THz absorption, especially fors-polarized radiation. The experimental results
are quantitatively consistent with our
calculations, incorporating realistic values ofcarrier scattering time and Fermi energy [2].
[1] R. R. Hartmann, J. Kono, and M. E. Portnoi, Nanotechnology 25, 322001 (2014).
[2] M. Shoufie Ukhtary et al. Appl. Phys. Exp. 8, 055102 (2015).

Corresponding Author: Junichiro Kono
Tel: +1-713-348-2109, Fax: +1-713-348-3091
E-mail: kono@rice.edu- 73 -

1P-32
Transverse Magnetic and Transverse Electric Surface Waves in Silicene
M. Shoufie Ukhtary, Ahmad R. T. Nugraha , Eddwi H. Hasdeo, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Graphene so far has been the main platform for investigating the surface waves.. Surface waves areelectromagnetic (EM) waves that propagate on the surface of a material. There are two kinds of surface
waves based on their polarizations: transverse magnetic (TM) and transverse electric (TE) surface wave.
In the case of TM surface wave, the component of magnetic field is transverse to the propagation
direction, while in the case of TE surface wave, the component of electric field is transverse to the
propagation direction [see Figs.1 (a) and (b)]. The TM surface wave can be seen as electric dipole
oscillation, while the TE surface wave can be seen as magnetic dipole oscillation. It is difficult to
integrate graphene with silicon-based optoelectronic devices which utilize the surface waves. On the other
hand, silicene, which is a monolayer of silicon atoms arranged in honeycomb lattice similar to graphene
structure [see Figs.1 (c) and (d)], is compatible with the silicon technology and might offer more featurescompared with graphene due to its significant spin orbit coupling and tunable energy gap due to its
buckled structure [1]. Silicene has also recently been synthesized experimentally [2,3]. Therefore, it is
intriguing to examine the surface waves in silicene.

In this work, we study the characteristics of both TM and TE surface waves in silicene. We determine thedispersion, the confinement length and the wavelength shrinkage for both kinds of surface waves. We
also calculate the damping and determine the propagation length of the surface waves. In the case of the
TE surface wave in silicene, we find that it exhibits better characteristics compared with that in graphene,in terms of a broader frequency range and more
confinement to the surface which originate from thebuckled structure of silicene. We find that even
undoped silicene can support the TE surface wave. We
expect the similar characteristics of TE surface wave
in other two-dimensional materials that have slightly
buckled honeycomb lattice.
[1] C.J. Tabert and E.J. Nicol. PRL 110.197402 (2013).
[2] Lalmi et al. APL 97. 223190 (2010).
[3] Padova et al. APL 96. 261905 (2010).

Figure 1: (a) The TM surface wave and its EM fieldcomponents. (b) The TE surface wave and its EM
field components. (c) Honeycomb lattice of silicene.
(d) Side view of silicene lattice. Sublattice A and B
are separated vertically by d = 0.46 Հ

Corresponding Author: M. Shoufie Ukhtary
TEL: +81-22-795-6442, FAX: +81-22-795-6447, E-mail: shoufie@flex.phys.tohoku.ac.jp- 74 -

1P-33
A Scalable Clean Transfer Process with Polymethylglutarimide○Takashi Matsumae and Tadatomo Suga
Department of Precision Engineering, The University of Tokyo, Tokyo 113-8656, Japan
The practicability of Polymethylglutarimide (PMGI) as a scaffold for a scalable cleantransfer is investigated for atomic layers.
Owing to its outstanding electronic1–2 properties, graphene has drawn intense researchinterest for a high speed transistor. A graphene transfer technique using a poly(methyl
methacrylate) (PMMA) scaffold has been developed3,4 in order to fabricate graphene on an
insulating substrate. Nevertheless, it is a great challenge to completely remove the PMMA
scaffold without resist residue remaining on the transferred graphene. Extrinsic scattering
related to polymer residue limits the performance of CVD graphene films when transferred toinsulating substrates.
In this study, a clean graphene transfer process has been achieved by employing a support
scaffold composed of a PMGI-based resist. Scanning electron microscopy (SEM) and atomic
force microscopy (AFM) observations (Fig. 1) confirmed that the amount of residue onlarge-area transferred graphene was sufficiently reduced by using PMGI scaffolds incomparison to the traditional technique that uses polymethyl methacrylate (PMMA) scaffolds.
The root mean square (RMS) roughness values of graphene surfaces using PMMA and PMGI
scaffolds were 6.5 nm and 4.0 nm, respectively. This comparison confirms that a cleaner
graphene surface was achieved by using PMGI as a support scaffold. Furthermore, Raman
spectroscopy suggests that the quality of the transferred graphene was equivalent to thatobtained by the traditional method.

(a)

(b)

Figure 1: Changes in graphene surface morphology caused by residues from (a)PMMA and (b)PMGI.
[1] X. Li, et al. Nano Lett., 10, 4328 (2010).
[2] H. Cao, et al., Appl. Phys. Lett., 96, 122106 (2010).
[3] L.Gao, et al. Nat. Commun., 3, 699 (2012).
[4] X.Li, et al., Nano letters, 9(12), 4359 (2009).
Corresponding Author: T. Matsumae
Tel: +81-3-5841-6495, Fax: +81-3-5841-6481,
E-mail: Matsumae.takashi@su.t.u-tokyo.ac.jp- 75 -

1P-34
Energetics and electronic structures of hexagonal GaN thin films andheterostructures○Yanlin Gao, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba,
Tsukuba, 305-8571, Japan
With their peculiar electronic properties, two-dimensional (2D) materials can be promising
candidates for fabricating functionalized devices for the next generation. The electronic
structure of 2D materials is sensitive to their consistent elements, network morphology, andinterlayer stacking arrangements. In our previous work, we have theoretically demonstrated
that the hexagonally bonded GaN (h-GaN) with atomic thickness prefers the planar structure
as the case of h-BN, and could be a compound semiconductor with an indirect energy gap of
2.28 eV. In this study, we investigated how the energetics and electronic structures of h-GaN
depend on the interlayer interaction and formation of hybrid structures with other 2D
materials using the density functional theory with generalized gradient approximation
combined with the van der Waals correction.
Our calculations elucidate that h-GaN can form a bilayer structure with AA’ stacking
arrangement and an interlayer spacing of 2.2 Å at which the interlayer binding energy is 1.18
eV per unit cell. The electronic structure of bilayer h-GaN is slightly modulated owing to a
substantial interlayer interaction arising from small interlayer spacing. We also check thegeometric and electronic structures of h-GaN thin films with increasing the number of the
GaN layer. Interestingly, with increasing the number of the GaN layer, the top of the valenceband gradually approaches the Γ point. Then, finally, the bulk h-GaN with the AA’ stacking
arrangement is a semiconductor with the direct energy gap of 2.78 eV at the Γ point, which isnarrower than that of bulk GaN with a Wurtzite structure. We also check the energetics andelectronic structures of the h-GaN sheet adsorbed on the other layered materials. We consider
graphene and h-BN as representative substrates for
h-GaN. Our calculations show that the equilibrium
interlayer spacing of h-GaN/graphene andh-GaN/h-BN are both 3.4 Å, indicating that thesehybrids are the van der Waals heterostructures, andin each case the electronic structure is almost thesimple sum of those of all constituents.
Corresponding Author: Y. Gao

Fig. 1. Interlayer binding energies of bilayer
h-GaN versus the interlayer spacing.

TEL: +81-29-853-5921, FAX: +81-29-853-5924
E-mail: ylgao@comas.frsc.tsukuba.ac.jp- 76 -

1P-35
Formation of 1D confining potential in MoS2/WS2-based heterostructures‫ۑ‬Yu Kobayashi1, Shoji Yoshida2, Ryuji Sakurada2, Kengo Takashima3,
Takahiro Yamamoto3, Tetsuki Saito1, Satoru Konabe4, Takashi Taniguchi5, Kenji Watanabe5,
Yutaka Maniwa1, Osamu Takeuchi2, Hidemi Shigekawa2, Yasumitsu Miyata1,6,*
1
2

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan

Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan3

Department of Liberal Arts, Tokyo University of Science, Katsushika 125-8585, Japan
4
5

RIST, Tokyo University of Science, Katsushika 125-8585, Japan

National Institute for Materials Science, Tsukuba 305-0044, Japan
6

JST-PRESTO, Kawaguchi 332-0012, Japan

In-plane atomic layer heterostructures based on transition metal dichalcogenides (TMDCs)
are expected to represent ideal systems for the realization of novel confined electronic systems
at one-dimensional (1D) interfaces. However, so far, such 1D confined systems have neverbeen observed in the previous studies of TMDC-based monolayer heterostructures [1-3]. Here,
we report the formation of confining potential at theheterojunction

interfaceofbilayerWS2

and

MoS2/WS2 vertical heterostructure as shown in Fig.
1a [4]. For this bilayer sample, scanning tunnelingmicroscopy/spectroscopy (STM/STS) revealed an
upshift in both the valence and conduction band edges
at the interface. Notably, the observed band bending
can be explained by the presence of 1D fixed charges
around the heterointerface as shown in Fig. 1b. The
present findings indicate that highly tunable electronic
properties of TMDC systems provide an ideal system
to realize 1D confined electronic system and thecarrier accumulation along the interface.

Fig. 1 (a) Structure mdel of bilayer WS2
and MoS2/WS2 vertical heterostructure. (b)Fitting curve of band bending by cylindricalcharge model around the interface of
bilayer heterostructure.

[1] Y. Gong, et al. Nat. Mater., 13, 1135 (2014). [2] Y. Kobayashi et al., Nano Res., 8, 3261 (2015).
[3] S. Yoshida, et al. Sci. Rep., 5, 14808 (2015). [4] Y. Kobayashi et al., Sci. Rep., in press.
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508,E-mail: ymiyata@tmu.ac.jp- 77 -

1P-36Fabrication and optical properties of vertical heterostructure ofmonolayer-WSe2/MoTe2○Takao Yamaoka, Lim Hong En, Koirala Sandhaya, Yuhei Miyauchi, Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Recently, monolayer transition metal dichalcogenide (1L-TMD) as atomically thin
two-dimensional (2D) material has attracted much attention from the viewpoints offundamental physics and applications [1,2]. The artificial van der Waals heterostructures canbe realized by the vertical stacking of different atomically thin 2D TMDs. The van der Waals
heterostructures exhibit the intriguing optical and electronic properties, which much differ
from their constituting monolayer TMDs [3,4].
In this work, we fabricated the vertical heterostructure of 1L-WSe2/1L-MoTe2 on SiO2/Si
substrate by transfer method and also investigated the optical properties of the heterostructure.
Figure 1(a) shows the optical microscope image of 1L-WSe2/1L-MoTe2 heterostructure, as
indicated in the squared region. Figure 1(b) shows Raman scattering spectrum of isolated
1L-MoTe2, 1L-WSe2, and 1L-WSe2/1L-MoTe2 heterostructure. The Raman peaks at 171 and235 cm-1 are assigned as A1g and E12g modes in isolated 1L-MoTe2. In 1L-WSe2, the Raman
scattering peaks of 249 and 261 cm-1 as degenerated A1g, E12g modes and 2nd order Ramanprocess mode are observed. We observe some Raman peaks from each layer of 1L-WSe2 and1L-MoTe2 in the 1L-WSe2/1L-MoTe2 heterostructure.
D
Moreover, the additional peak at 309 cm-1 is appeared,[1] J. C. Shaw et.al., Nano Res. 7, 511 (2014).
[2] N. Dong et.al., Sci. Rep. 5, 14646 (2015).
[3] Y. Gong et.al., Nat. Mater. 13, 1135(2014).
[4] X. Duan. et.al., Nat. Nano. 9, 1024 (2014).
[5] W. Zhao et.al., Nanoscale. 5, 9677 (2013).
[6] M. H. Chu et.al., ACS. Nano. 8, 9649 (2014).
Corresponding Author: Kazunari Matsuda
Tel/Fax: +81-774-38-3460
E-mail: matsuda@iae.kyoto-u.ac.jp

0R7H%XON:6H%XON

˩P+HWHUR

E
㻺㼛㼞㼙㼍㼘㼕㼦㼑㼐㻌㻵㼚㼠㼑㼚㼟㼕㼠㼥㻌㻔㼍㻚㼡㻚㻕

which is assigned as Raman inactive B12g mode in
1L-WSe2 [5,6]. The out-of-plane B12g mode becomes
Raman active in the bi-layer system. Thus, theappearance of out-of-plane B12g mode in
1L-WSe2/1L-MoTe2 heterostructure suggests theinter-layer coupling between 1L-WSe2 and 1L-MoTe2
in the heterostructure. The detail optical properties
including photoluminescence and absorption in the
1L-WSe2/1L-MoTe2 heterostructure will be discussed.

+HWHUR
:6H 0R7H

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:6H /0R7H /

㻝㻜㻜

㻞㻜㻜
㻟㻜㻜
㻾㼍㼙㼍㼚㻌㻿㼔㼕㼒㼠㻌㻔㼏㼙㻙㻝㻕
Fig. 1 (a) Optical microscope image of
WSe2/MoTe2 heterostructure. (b) Raman
scattering spectrum of WSe2/MoTe2
heterostructure, 1L-WSe2 and 1L-MoTe2.

- 78 -

1P-37
Electronic and magnetic properties of porous hydrocarbon networks○Jun-ya Sorimachi, Susumu Okada
Graduate school of Pure and Applied Sciences, University of Tsukuba, Tsukuba
305-8571, Japan
Electronic structure of hydrocarbon molecules is sensitive to their size and network
morphology, making them to be building blocks for the various functional
nanomaterials which are applicable for wide area of the modern technology. Among
possible morphologies, molecules with a triangular shape occasionally exhibit spinpolarization arising from the non-boding electron states associated with the imbalance
between two sublattices. Phenalenyl: C13H9 is the smallest and representative example
of such materials with S=1/2 polarized spin and could be the constituent unit for 2D
porous hydrocarbon networks with magnetic ordering. In this work, we design a novelhydrocarbon molecule with radical spin as the 3D version of phenalenyl molecule (Fig.
1). Furthermore, by assembling this molecule, we also design 2D and 3D poroushydrocarbon network (Fig. 2) and explore their electronic and magnetic properties using
the density functional theory with generalized gradient approximation.
In the case of 2D networks, because of a triangular and pyramidal shape of themolecule, we can construct two dimensional honeycomb networks of the molecules.
Our calculation shows that one of two networks possesses four magnetic states. In
contrast, the other network is a semiconductor with the direct energy gap of 1.2 eV. The
3D network is also a semiconductor with the direct band gap of 1.3 eV. Because of thelarge spacing arising form the constituent molecule, the 3D porous hydrocarbon
network is a low-density material of which density is 40% of that of the diamond. The
fact indicates that the 3D network is a plausible candidate for the host materials of theenergy storage devices in which a number of atoms or molecules are accommodated in
the nanometer scale pore.

(a)Fig. 1 Geometric structureand spin density of ahydrocarbon molecule witha triangular conical shape.

(b)Fig. 2 Geometric structure of (a) 2D and (b) 3D porous hydrocarbon
network of pyramidal conical molecules.

- 79 -

1P-38Construction of graphene – TiO2 hybrid nano-materialusing bifunctional protein supramoleculeYuki Hashima, Yasuaki Ishikawa Mutsunori Uenuma, Naofumi Okamoto,
Ichiro Yamashita and Yukiharu Uraoka
1

Graduate School of Material Science, Nara Institute Science and Technology, 8916-5
Takayama, Ikoma, Nara 630-0192, Japan

Titanium dioxide (TiO2) has efficient photoactivity, high photostability, chemical inertness,
and nontoxicity as a semiconductor material, which is useful in photovoltaic andphotocatalysis. The composite of TiO2 and graphene would contribute to a hybridnano-material that combines superior properties for specific device applications. Various
TiO2-graphene composite materials have been produced using “graphene oxides” that weremodified with functional polymer [1]. We introduced new TiO2 composite method using
bifunctional protein supramolecule in this study.
We designed and mass-produced Dps displaying carbon nano-horn binding peptide andTi binding peptide, which named CDT-1. We previously reported that the CDT-1 adsorbed tographene using carbon nano-horn binding peptide. In this report, TiO2 was deposited ongraphene using Ti binding peptide in Graphene/CDT-1 bio-conjugates.
Experimentally, Graphene/CDT-1 bio-conjugates (50mM phosphate buffer pH 6.0) werethen dipped in Titanium precursor solution. Precipitation of graphene – TiO2 hybridnano-material was performed by ultracentrifugation. After the process, TEM–EELS mapping
was carried out.
The Fig. 1 shows TEM image of graphene - TiO2 hybrid material and Ti mapping in
TEM-EELS image, respectively. In this result, Ti mapping matched with the graphene TEM
image, suggesting TiO2 was deposited on graphene owing to the Ti binding peptide.
We successfully constructed graphene - titanium hybrid nano-material using bifunctional
protein supramolecule. All processes were carried out at room temperature, using anenvironmentally friendly method.

Fig.1 (a) TEM image of the graphene - TiO2 hybrid material.
(b)EELS mapping of Ti at the same region as (a).
[1] Donghai Wang et al. ACS Nano 3 (4), 907 - 914 2009
Corresponding Author: Yasuaki Ishikawa
Tel:+81-743-72-6064, Fax:+81-743-72-6069,
E-mail:yishikawa@ms.naist.jp- 80 -

1P-39Rapid and Reversible Dispersibility Tuning of Carbon Nanomaterials
by the Photoisomerization of an Azobenzene-derived dispersant○Hirokuni Jintoku, Yoko Matsuzawa,* Hideyuki Kihara,* Masaru Yoshida
Research Institute for Sustainable Chemistry, National Institute of Advanced Industrial
Science and Technology (AIST), Tsukuba 305-8565, Japan.
Carbon nanomaterials such as carbon nanotubes (CNTs), graphene, and carbon black findapplications in a variety of areas owing to their unique structural, mechanical, and electricalproperties. In order to fabricate high-performance carbon nanomaterial-based devices, it isimportant to not only ensure that the carbon nanomaterials are of good quality, but also
remove the organic additives (e.g., solvents and dispersants) that are used during the
fabrication process. In particular, the presence of residual organic components in thenanomaterials negatively impacts the electrical properties of electrical devices. Over the past
decade, stimuli-responsive dispersants have been investigated for the purification of CNTs
and removal of organic components from CNT-based devices.[1] In this work, we report a
new photoresponsive dispersant (AB) for carbon nanomaterials based on azobenzene and aquaternary ammonium salt, which act as a photosensitive moiety and solubilizing unit inwater, respectively (Fig. 1a).
We successfully obtained a well-dispersed SWCNT
aqueous dispersion using AB as the dispersant with bathsonication followed by centrifugation (solid line, Fig.
1b). The dispersibility of SWCNTs in water changed
rapidly upon the photoisomerization of AB. Upon
irradiation with UV light for a short time (365 nm, 150
mW/cm2, 10 min), the SWCNT/AB dispersion changed
to the agglomerated state (dashed line, Fig. 1b). The
reverse photoreaction of the SWCNT/AB hybrid
resulting in transformation from the agglomerated state
to the dispersed state was observed upon irradiation withvisible light. When the agglomerate was placed undervisible light (436 nm, 25 mW/cm2, 20 min), followed bysonication for 5 min, the SWCNT/AB hybrid returned tothe dispersed state. Over three cycles of switching
between the dispersed and agglomerated states byalternate UV and visible irradiation, only a slight
spectral change was observed (Fig. 1c).
We would like to discuss about the dispersibility
tuning of other carbon nanomaterials (e.g., MWCNT,
carbon black and graphene) in presentation.

[1] Y. Matsuzawa, M. Yoshida et al. Adv. Mater. 23, 3922 (2011)
Corresponding Author: H. Kihara
Tel: +81-29-861-4442, Fax: +81-29-861-4673
E-mail: h-kihara@aist.go.jp- 81 -

Fig. 1 (a) Chemical Structure of AB. (b)UV-Vis-NIR spectra of SWCNT/AB in
D2O at 25 ºC. (c) Absorbance changesof the SWCNT/AB solution before UV
irradiation (solid circle), after UV
irradiation (open circle) and after Vis
irradiation (solid square).

1P-40Effect of the flow regime on graphene growth
Ya-Ping Hsieh1, Ching-Hua Shih1, Yi-Jing Chiu1, and Mario Hofmann2
1

Graduate Institute of Opto-Mechatronics, National Chung Cheng University andAdvanced Institute of Manufacturing with High-Tech Innovations, Chiayi, Taiwan 62102
2

Department of Material Science and Engineering, National Cheng Kung University,
Tainan, Taiwan 70101
Graphene is a novel 2D material

with significant promise for flexible
electronics, interconnects, and 3D
devices. The most pressing issue for theapplication of graphene is the scalable
production of high quality material. We
haverecentlydeveloped

aquality, as quantified by spectroscopic
and electrical transport measurements,
indicates

theimportanceofatransport-limited growth process toachieve high quality and uniform
graphene growth.

novel

approach to increase the throughput ofgraphene CVD synthesis. By using
closely stacked copper foil substrates,
the amount of graphene grown in one
batch can be enhanced twenty-fold.
The adjustment of the distance
between copper foils allows us to widely
tune the fluid dynamical conditions of
the graphene growth process. While weobserve free flow conditions for large
gap sizes, a transition to the molecularflow regime was identified when the gap
size is below the mean free path.
By exploring the graphene growthrate we are able to extract the diffusion
coefficient for the carbon precursor foreach flow condition. The diffusion
coefficient was found to decrease with
gap size in agreement with the Knudsen
condition.
Our analysis of the graphene

Figure1.

Horizontal

growthprocess(a)

distribution of grain size and grain density along
one pore, (inset) photographs of graphene grownat the edge and the center of on copper foil, (b)coverage vs. position along one pore for various
growth durations, (inset) extracted values ofξͶ‫ݐܦ‬vs.ξ‫ݐ‬.

- 82 -

2P-1
Synthesis and self-aggregation properties of various triazoliumfullerene○Toshihiko Okada, Saori Inaba, Naohiko Ikuma, Hidehiro Sakurai
Division of Applied Chemistry, Graduate School of Engineering, Osaka University,
Osaka, 565-0871, Japan
Ionic fullerenes are useful for medical applications and self-assembly nanocarbon materials
based on the amphiphilic intermolecular ionic and hydrophobic interactions [1]. We have
prepared ionic triazoliumfullerenes 2+ PF6- by [3+2] cycloaddition of 1,2-triazadienium salt
1+PF6- with C60 (Figure 1)[2]. A DFT calculation predicts “periconjugation” between the
cationic N1-N2-N3 linkage and fullerene sphere and the more reduced LUMO level andmolecular dipole moment than pyrrolidiniumfullerene, a conventional ionic fullerene (Figure
2a).
Vesicles (Figure 2b) and crystalline (Figure 2c) self-aggregates were observed by TEM.
When R= H, size of vesicles prepared from THF solution is 21.26.4 nm. When R = Cl,molecular dipole moment decreased and size of vesicles increased to 46.613.6 nm.
R
R

R
N

N

KPF 6
t-BuOCl

R

R
N N N

CH2Cl2, toluene-78  to rt

N
H

PF 6-

C60
CH2Cl2, toluene-78  to rt

1 +·PF 6-

1

PF 6N2 3N
N1

2+•PF 6-

R= H, Cl, Br, CH3, OMeFig. 1 Synthesis of triazoliumfullerene 2+•PF6R

(a)
R

N
N

N

(b)

(c)

periconjugation

triazoliumfullerene 2+

TEM of 2+ (R = H)

Fig. 2 (a)Molecular structure and (b,c)TEM images of triazoliumfullerene 2+ prepared from MeOH solution[1]D. M. Guldi, M. Prato et al., Acc. Chem. Res., 2005, 38, 38.
[2] N. Ikuma, S. Inaba, K. Kokubo, T. Oshima, Chem. Commun., 2014, 50, 581.
Corresponding Author: N.Ikuma
Tel: +81-6-6879-4592, Fax: +81-6-6879-4593,
E-mail: ikuma@chem.eng.osaka-u.ac.jp- 83 -R

2P-2
Supramolecular Differentiation for Construction of Anisotropic C60
Nanostructures by Time-Programmed Control of Interfacial Growth○Kosuke Minami1, Partha Bairi1, Jonathan P. Hill1, Waka Nakanishi1, Lok Kumar Shrestha1,
Liu Chao2, Koji Harano2, Eiichi Nakamura2, Katsuhiko Ariga1
1

International Research Center for Materials Nanoarchitectonics, National Institute forMaterials Science, Tsukuba 305-0044, Japan2
Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan

Many of the constituents of natural systems including molecules, biomolecules and cells
are composed of asymmetric structures. This asymmetry is an extremely important featureand it is maintained even through complex processes. However, processes of self-assembly inchemistry often only yield simple symmetric nanostructures, due to energy minimization
processes. The construction of asymmetric nanostructures requires additional information
which can be incorporated by applying molecular design principles, such as can be found in
finely tuned complex molecules or polymers where phase-separation processes can beaffected by designing non-covalent interactions.
Liquid–liquid interfacial assembly has great potential for the synthesis of asymmetricforms [1]. However, there remain some limitations of these approaches in the fabrication ofanisotropic nanostructures. Through a combination of the phase-separation and interfacialassembly technique, anisotropic structures containing specifically designed components canbe constructed. We have coined the term “supramolecular differentiation” for this process.
Here, we show the synthesis of an anisotropic fullerene nanostructures bearing a single
tube-like structure by combining the liquid–liquid interfacial assembly method with local
phase-separation of two fullerene derivatives (Figure 1): pentakis(phenyl)fullerene (PhH),
and pentakis(4-dodecylphenyl)fullerene (C12H) [2]. We have finely tuned the local
phase-separation by means of time-programmed control of liquid–liquid interfacial assemblyand homogeneous growth. Seed particles with a domain structure, which provides a platform
for formation of tube-like structures, were prepared a
by liquid–liquid interfacial precipitation (LLIP) PhH+
method [3]. After pre-incubation time, sonication C12H
was applied to the mixture leading to homogeneous
growth process, where the tube-like structures bformed on the domain structure on the seed particle.
IPA
Sonication
Our technique, which is essentially a combinationof the interfacial assembly and phase-separation PhH+
C12H Toluene
Toluene/IPA
phenomena, can be used to further enable theInterfacial assembly
Homgeneous growthconstruction of anisotropic nanostructures.
d
11

H

11

11
11

H

11

Aromatic- 84 -

c
Aliphatic[1] W. Li et al. Adv. Mater. 25, 5129 (2013).
[2] K. Miyazawa et al. J. Mater. Res. 17, 83 (2002).
[3] (a) M. Sawamura et al. JACS 118, 12850 (1996);(b) T. Homma et al. JACS 133, 6364 (2011).
Corresponding Author: K. Minami, L. K. Shrestha, K. Ariga
Tel: +81-29-851-3354 (ex. 8456)
E-mail: MINAMI.Kosuke@nims.go.jp (K.M.);
SHRESTHA.lokkumar@nims.go.jp (L.K.S.);
ARIGA.Katsuhiko@nims.go.jp (K.A.)

PhH

C12H

Figure 1. (a) Schematic illustration of supramoleculardifferentiation of fullerene anisotropic structures. (b) Methodof supramolecular differentiation. (c) Structures of fullerene
derivatives. (d) An SEM image of fullerene anisotropic
nanostructures.

2P-3
Enhancement of Fill Factor in Inverted Organic Solar Cells using
Self-Assembled Monolayer of Fullerene Catechol○Il Jeon1, Keisuke Ogumi2, Takafumi Nakagawa1, Yutaka Matsuo1,3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, JapanTokyo Metropolitan Industrial Technology Research Institute, Tokyo 135-0064, Japan3
Hefei National Laboratory for Physical Sciences at Microscale, University of Science andTechnology of China, Hefei, 230026, China
2

The chemical phenomena at the interface of metal oxide are of great importance fororganic solar cell performance, because thin-film organic solar cells depend on the interface
in facilitating efficient charge extraction. In this regard, inverted organic solar cells (OSCs)
can take advantage of the vertical phase separation and concentration gradient in the active
layer. Fullerenes as electron acceptors in the photoactive layer have been at the center of OSC
technology to date. Fullerene acceptors being near the electron-transporting layer (ETL) has
been known to strengthen the charge-carrier transport in an inverted architecture. Thus,
technology that can introduce fullerenes on metal oxide can establish the first principles ofprecise control over the vertical separation.
Self-assembled monolayers (SAMs) with fullerene attached are good motifs for such aprospect. Coating metal oxides or metal with SAMs can change the work function and surface
energy of electrodes. There has been a variety of SAMs with fullerenes reported to date.
Among those SAMs, catechol-terminated SAMs have attracted the attention owing to their
weak diprotic acid nature, which can form bidentate bonding with metal oxide while
minimizing damage unlike carboxylic acid- or phosphonic acid-terminated modifiers.
Here, we introduce a simpler catechol-terminated surface modifier that is composed of acatechol end and a fullerene end, which are linked by a simple methylene linker, functioning
as effective charge-carrier harvesters. Unlike fulleropyrrolidine, our compound does notcontain the nitrogen atom. Catechol, being a weak acid, can bind to TiOx strongly. Fullerene
has high electron mobility and low hole mobility. Therefore, a monolayer of fullerene canfunction as an additional hole blocker. With fullerene’s tendency to attract other fullerene
molecules by π-π interactions, the monolayer offullerene may even induce the vertical separation
effect as evidenced by the enhancement of fill
factor (FF) in our study. We fabricated an inverted
OSC using a mixture of poly(3-hexylthiophene)(P3HT) and phenyl-C61-butyric acid methyl ester(PC61BM) in a structural configuration ofglass/ITO/TiOx-catechol
C60/P3HT:PC61BM/PEDOT:PSS/Au. The catechol
C60-treated device gave a PCE of 2.81%, while a
non treated device sample gave a PCE of 2.46%,
where enhancement of FF was the main reason for
Fig.1: Concept illustration of this work.
the improvement.
Corresponding Author: Y. Matsuo
Tel: +81-3-5841-0978, E-mail: matsuo@photon.t.u-tokyo.ac.jp- 85 -

2P-4
Solid-State NMR Studies on the Aggregated Structuresin Organic Bulk Heterojunction Solar Cells
żSaki Kawano1 and Hironori ogata1,2

Grad. School of Sci. and Engin.,Hosei Univ.

1

Res.Center for Micro-Nano Technol., Hosei Univ.

2

Bulk heterojunction (BHJ) organic solar cells are an emerging technology that has the potential to provide
a low cost photovoltaic devices. It is well known that the nanomorphology of the polymer:fullerene BHJ isa critical factor which affects the solar cell performance. The addition of processing additives such as
1,8-diiodooctane (DIO) is widely used approach to increase power conversion efficiencies for manyorganic solar cells[1-2]. Solid-state solar NMR spectroscopy offers several techniques for the investigationof the morphological, structural, and dynamics properties of BHJ organic solar cells.
We have explored the effects of DIO, 1,8-Octanedithiol(ODT) and 1-Chloronaphthalene(CN) addition of
P3HT/PCBM BHJ films on the local crystallinity and morphology by using solid-state NMR spectroscopy.
It is reported that the crystallinity of P3HT films also depend on the drying time. In this study, weinvestigated the change in the crystallinity, morphology, and the properties of molecular motions of
P3HT/PCBM BHJ film by changing drying rates by using 13C and 1H solid-state NMR spectroscopy. 
Mixed solution of P3HT/PCBM of 1:1(w/w) was prepared by mixing P3HT and PCBM into chlorobenzene
at a concentration of 1 wt% for 50 hrs in a glove box under argon atmosphere. Additives were then dropped
into the solution and then stirred for 1 hr. The solution was filtered using 0.45ȝm filter before making films
to remove undissolved materials. P3HT/PCBM BHJ films were prepared by dropping the solution in a
glass plate and dried in a glove box under argon atmosphere for 40 hrs and then put in the vacuum. Dried
film were removed from the glass plate and sealed into 4 mm zirconia NMR rotor. Solid-state NMR spectra(13C-CP/MAS-NMR, 1H-MAS NMR, and their heteronuclear correlation-NMR) and T1 were measured byusing Bruker AVANCE300 spectrometer. The detailed results will be presented.

References:
1) J. K. Lee et al., J.Am.Chem.Soc.,130(2008)3619.

 2) B.R.Aïch et al, Organic Electronics,13 (2012)1736.
3) Ryan C. Nieuwendaal et al., ACS Macro Lett. 3(2014)130í135.
Corresponding Author: Hironori Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,- 86 -

2P-5
Triplet state of molecular oxygen in openC60○Azusa Kato1, Tsukasa Futagoishi 2, Yasujiro Murata2, Tatsuhisa Kato 1,3
1

Graduate School of Human and Environmental Studies, Kyoto University, Kyoto 606-8501,
Japan
2
Institute for Chemical Research, Kyoto University, Kyoto 611-0011, Japan
3
Institute for Liberal Arts and Sciences, Kyoto University, Kyoto 606-8501, Japan

Molecular oxygen (O2) is the fundamental bi-radical
molecule with the electronic ground state 3Σg-, whosemolecular parameters have been studied in gas phase, andwell documented. We performed the molecular surgery
synthesis of the endohedral fullerene of O2@openC60, in
which O2 is trapped in an openC60 cage as shown in Fig. 1.[1]X- and W-band ESR measurements at cryogenic
temperatures were carried out to know whether the O2
molecule trapped in the openC60 cage kept the triplet state of
Fig.1 Structure of O2@openC60
3 Σg in the same condition as gas phase.
O2@openC60 exhibited spectra as shown in Fig. 2,
which were observed by a X-band ESR spectrometer at temperatures from 4K to
32K. The prominent absorption peaks at the magnetic field around 1200mT were well
reproduced by the computer simulation using parameters of the g value of 2.0023 and the zero
field splitting constants of D=3.730 cm-1 and E=0.015 cm-1. The peak intensities followed
the Boltzmann statistics law, the intensity increased with increasing temperature
at the temperature range from 1.5 K to 3K, and decreased at the range above 4K.
This temperature dependence is consistent with the energy level order among
three spin sublevels, Ms=+1, -1, 0, which is determined by the zero filed splitting
constant of positive value of D.
Comparing with parameters of
O2 in gas phase, the value of
D=3.730 cm-1 is smaller thanthat of gas phase, 3.963 cm-1.[2]It’s noticeable that O2@openC60
shows non-zero value of
E=0.015 cm-1. These features
would attribute to the confinementof the wave function of radical
electrons by the openC60 cage.
[1] T.Futagoishi, et al, Org. lett. 15,
2750-2753 (2013).
[2] T. Amano and E. Hirota, J. Mol.
Spectrosc. 53, 346-363(1974).
Corresponding Author: Tatsuhisa Kato
Tel: 075-753-6695, Fax: 075-753-6695,
E-mail: kato.tatsuhisa.6e@kyoto-u.ac.jp

Fig.2 X-band ESR spectra of O2@openC60 powder observed at
4K, 8K, 16K, and 32K (Obs.). And simulated spectra (Sim.).

- 87 -

2P-6
Interactions between carbon nanotubes and aromatic amino acidsżAtsushi Hirano1, Kazuki Iwashita2, Kentaro Shiraki2, Shun Sakuraba3, Tomoshi Kameda4,
Rieko Ishii,1 Takeshi Tanaka1
1

Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan
2
Faculty of Pure and Applied Sciences, University of Tsukuba, Ibaraki 305-8573, Japan
3
Graduate School of Frontier Sciences, The University of Tokyo, Chiba 277-8581, Japan
4
Artificial Intelligence Research Center, National Institute of Advanced Industrial Scienceand Technology (AIST), Koto, Tokyo 135-0064, Japan
Carbon nanotubes are anticipated for use in biological applications such as drug delivery
carriers, imaging materials and cancer targeting materials. In these research fields, unspecificinteraction between carbon nanotubes and proteins is a crucial factor that affects theirfunctional properties. Fundamental insights into the interaction mechanism should thus beclarified for addressing and controlling the unspecific interaction. Since proteins consist ofamino acid residues, the protein–carbon nanotube interaction can be understood in terms ofinterplays of amino acids with carbon nanotubes. In the present study, we demonstrated that
aromatic amino acids, i.e. tryptophan (Trp), tyrosine (Tyr), phenylalanine (Phe), have a highaffinity for the single-wall carbon nanotubes (SWCNT) using chromatographic analyses andmolecular dynamics simulations.
Fig.1 shows chromatograms of the aromatic aminoacids in the column with or without HiPco SWCNTs
as ligands. Retention time of the amino acids
increased in the order of Phe < Tyr < Trp in thepresence of the SWCNTs, meaning that indole hasfavorable interactions with the SWCNTs [1]. Fig.2
shows binding free energy of the amino acids onto
the armchair and zigzag SWCNT sidewalls, which
was obtained by the molecular dynamics simulations.
The results were consistent with the experimental
Fig.1: Chromatograms of Trp, Tyr anddata. It should be noted that the binding free energy
Phe in the presence and absence of
SWCNTs as column ligands.
increased monotonously with increasing SWCNT
diameter, regardless of the helicity. Thus, SWCNT
curvature was found to be a factor that affects theinteraction between the amino acids and SWCNTs.
On the basis of the knowledge of the interaction, we
succeeded to control protein adsorption onto the
SWCNTs using arginine [2].
[1] K. Iwashita et al. Langmuir 31, 8923 (2015).
[2] K. Iwashita et al. Chem. Lett. DOI: 10.1246/cl.160390
Corresponding Author: A. Hirano
Tel: +81-29-849-1064, Fax: +81-29-861-2786,
E-mail: hirano-a@aist.go.jp
Fig.2: SWCNT-diameter-dependence of
the amino acid binding free energy to
the SWCNT sidewall.

- 88 -

2P-7
Synthesis of local phenylboronic acid-modified
single-walled carbon nanotubes and its PL behavior○Hisashi Onitsuka1, Tomohiro Shiraki1,2, Naotoshi Nakashima1,2
1Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) emit near-infrared photoluminescence (NIR-PL)
that is applicable to advanced optical materials including bio-sensing and imaging applications.
Recently, a very small amount of chemical modification on the SWNTs has been reported toenhance their quantum yields dramatically by generation of red-shifted PL (E11*) compared to
PL (E11) of pristine SWNTs [1] and we are elucidating the fundamental properties of the E 11*[2]. Very recently, we reported emergence of new red-shifted SWNT PL based on proximal
doped-site design [3].
In this study, we design and synthesized phenylboronic acid-modified SWNTs (BA-SWNTs)
and the aqueous dispersion using sodium dodecylbenzenesulfonate (SDBS) showed the E11*
PL at 1138 nm. Interestingly, PL peak shift of the E11* was observed by adding D-fructose to
the BA-SWNTs dispersion. D-glucose also induced similar PL peak shift of the E11*. However,clear difference between the two sugar was responsiveness to the concentrations of the addedsugars, in which D-fructose showed larger peak shift than D-glucose especially at the low
concentration region. This spectral change behavior reflects binding constants of phenylboronic
acid with sugars (D-fructose: 4370 M-1 > D-glucose: 110 M-1) [4]. Therefore, these results
strongly support that the observed spectral shift is induced by sugar recognition at the modified
site and it induces PL property change of the BA-SWNTs. Moreover, we found that surfactants,
which are used as dispersants of SWNTs, can affect sugar recognition on the BA-SWNTs. it
indicates that adsorption structures of surfactants on BA-SWNTs can be important factor of the
responsiveness and the sugar recognition behavior would be modified by changing thesurfactants. Details in the surfactant effect will be discussed at the symposium.
[1] Y. Wang et al., Nat. Chem. 5, 840 (2013). [2] N. Nakashima et al., J. Phys. Chem. C. in press (2015).
[3] N. Nakashima et al., Sci. Rep. 6, 28393 (2016). [4] J. O. Edwards et al., J. Org. Chem. 24, 769 (1959).
Corresponding Author: Naotoshi Nakashima
Tel: +81-92-802-2840, Fax: +81-92-802-2840,
E-mail: nakashima.naotoshi.614@m.kyushu-u.ac.jp- 89 -

2P-8
Geometries and electronic properties of MoS2 nanotube
żShuntaro Oshima, Masayuki Toyoda, Susumu Saito
Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, JapanMoS2 is one of the transition metal dichalcogenides (TMD) with trigonal-prismatic
structure [1,2]. Its structure as well as electronic properties has been studied vigorously due torecent experimental realization of various types of atomically-thin layered compounds [3-5].
Contrary to graphene, MoS2 and other TMD layers are considered to be semiconductors andare attracting attention as future device materials [5,6]. In the present work, we investigate
structure and electronic properties of MoS2 (10,0) single-walled nanotube using local density
approximation (LDA) in the framework of density-functional theory.
Prior to the series of studies of MoS2 nanotube, we have studied bulk MoS2 with the 2Hbstructure and single-layer MoS2 using LDA. As a result of structural optimization, we haveobtained lattice constants of a = b = 3.14 Å for both structures and c = 12.07 Å for the bulk
phase. Band structure calculations show direct gap of Eg = 1.87 eV at K point and indirect gapof Eg = 0.74 eV for monolayer and bulk MoS2, respectively. Similar trends have been
observed in studies of other groups [1,2,7,8].
In the case of the (10,0) nanotube, we obtained c = 5.25Å for the optimized lattice constantalong the tube axis, and 5.74 Å for the radius of a cylindrical Mo layer. The calculated totalenergy of this optimized structure is higher than that of single layer structure by 1.2 eV per
MoS2 unit. Band structures for both elongated and shortened (10,0) nanotubes with c = 5.40 Å
and 4.60 Å are calculated, and interestingly the results show metallic gapless properties.
[1] L. F. Mattheiss, Phys. Rev. B 8, 3719 (1973).
[2] R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, R. A. de Groot, and A. Wold, Phys. Rev. B 35, 6195
(1987).
[3] R. Tenne, L. Margulis, M. Genut, and G.. Hodes, Nature 360, 444 (1992).
[4] K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc.
Natl. Acad. Sci. U.S.A. 102, 10451 (2005).
[5] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010).
[6] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nature Nanotechnology 6, 147 (2011).
[7] Y. Ding, Y. Wang, J. Ni, L. Shi, S. Shi, W. Tang, Physica B 406, 2254 (2011).
[8] W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, Phys. Rev. B 85, 033305 (2012).
Corresponding Author: S. Oshima
Tel: +81-3-5734-2703, Fax: +81-3-5734-2739,
E-mail: soshima@stat.phys.titech.ac.jp- 90 -

2P-9
Theory of optimized power factor of low-dimensional semiconductors andapplication to semiconducting carbon nanotubes○ Nguyen T. Hung, Ahmad R. T. Nugraha, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
A good thermoelectric material is characterized by how efficient electricity can be obtained
for a given heat source, where two parameters are often evaluated: (1) power factor (PF = S2σ,
where S is the Seebeck coefficient and σ is the electrical conductivity) and (2) figure-of-merit(ZT = PF×T/κ, where T is the average temperature and κ is the thermal conductivity). In
applications where the heat source is essentially free of charge (e.g., solar heat), the minimum
cost of generating power is achieved by operating at maximum PF [1]. On the other hand,when heat source is expensive (e.g., fossil fuel combustion), obtaining as large ZT as possible
is important to reduce the cost of generating power [2]. For obtaining thermoelectric materials
having high output power, the PF is a more important parameter rather than ZT [1, 3]. There
are many strategies on engineering phonons and electrons to increase ZT over the past two
decades [2]. However, enhancement of the PF remains a challenge.
In this work, we theoretically investigate theinterplay between the confinement length L and thethermal de Broglie wavelength Λ to optimize the
PF. An analytical formula for the PF is derived
based on the one-band model assuming
non-degenerate and degenerate semiconductors to
describe quantum effects on the PF of the low
dimensional semiconductors. The PF is enhanced
for one- (1D) and two-dimensional (2D)
semiconductors when L is smaller than Λ of thesemiconductors [Fig. 1]. We apply this theory tosemiconducting carbon nanotubes and we find that
the PF increases as the tube diameter decreases,
which also have the large Seebeck coefficient [5].

Figure 1 Power factor PF of 1D and 2D
systems scaled by power factor of 3D
system PF3D as a function of L/Λ ratio of
Si, Bi, and PbTe materials. By the PF3D
scaling, the PF of different materials canshow in the same lines (dashed and dottedlines) for 1D and 2D systems [4].

[1] W. Liu et al., PNAS 112, 3269 (2015).
[2] B. Poudel et al., Science 320, 634 (2008).
[3] W. Liu et al., Scripta Mater. 111, 3 (2016).
[4] N. T. Hung et al., Phys. Rev. Lett. in press (2016), arXiv:1604.04353.
[5] N. T. Hung et al., Phys. Rev. B 92, 165426 (2015).
Corresponding Author: Nguyen Tuan Hung
TEL: +81-22-795-6442, FAX: +81-22-795-6447, E-mail: nguyen@flex.phys.tohoku.ac.jp- 91 -

2P-10Effect of internal structure on the electrical performance of MWCNT-Cu
wiresżRajyashree Sundaram1, Atsuko Sekiguchi1,2, Takeo Yamada1,2, Kenji Hata1,2
1Technology Research Association for Single Wall Carbon Nanotubes (TASC), Central 5,
1-1-1 Higashi, Tsukuba 305-8565, Japan
2
National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1
Higashi, Tsukuba 305-8565, Japan
Carbon nanotube-copper composites (CNT-Cu), which combine the merits of CNTs and Cu
offer many advantages, such as low density, electrical conductivity exceeding Cu at elevatedtemperatures, high ampacity, metal-like thermal conductivity, and low thermal expansion
coefficient [1-3]. Consequently, CNT-Cu can potentially be widely used as a lightweight
replacement for Cu. We have previously reported CNT-Cu production as sheets andmicrofabricated patterns [1-3]. However, there is much demand for CNT-Cu wires from theindustry to address the rising need for lightweight conductors in smart fabrics, motor
windings, electrical wiring, etc.
Here, we report the electrical properties of multiwalled (MW)CNT-Cu wires fabricated byelectrodeposition as a function of internal Cu filling. Our results show that full internal Cu
filling throughout the wire-length is essential to maximize the electrical performance of thecomposite wires.
MWCNT-Cu wires with full internal Cu filling exhibited a combination of (100×) lower
resistivity and (3×) higher current carrying capacity than the neat MWCNT wires. These
wires also showed lower resistance-change with temperature than Cu and the temperature
coefficient of resistance was ½ that of Cu. In comparison, MWCNT-Cu wires with partial andno Cu filling showed inferior electrical properties. Our work indicates that the seamless
CNT/Cu structural integration may be crucial to maximize the synergistic contribution from
CNTs and Cu to enhance the composite performance.
This presentation is based on results obtained from a project commissioned by the New
Energy and Industrial Technology Development Organization (NEDO).
[1] C. Subramaniam et al. Nat. Comm. 4, 2202 (2013).
[2] C. Subramaniam et al. Nanoscale 6(5), 2669 (2014).
[3] C. Subramaniam et al. Nanoscale 8, 3888 (2016).
Corresponding Author: A. Sekiguchi
Tel: +81-29-861-4551, Fax: +81-29-861-4851
E-mail: atsuko-sekiguchi@aist.go.jp- 92 -

2P-11
Measurement of photoinduced force acting on polystyrene microsphereby carbon nanotube mechanical resonator○Masaaki Yasuda1, Kuniharu Takei1, Takayuki Arie1, Seiji Akita1
1

Department of Physics and Electronics, Osaka Prefecture University,
Sakai 599-8531, Japan

Amplitude (arb. unit)

Phase shift (deg)Phase (deg)Polystyrene (PS) microspheres are usually used to measure the interaction force between
biomolecules with optical tweezers. Although the force acting on the microsphere wasestimated from the interaction between the viscous fluid and perfect sphere, it is hard to
realize the direct measurements of the optical force which is very small on the order of a few
pN or less. Multiwall carbon nanotubes (MWNTs) are one of promising component for nanoelectro mechanical systems toward minute force sensing [1]. Here, we demonstrate themeasurement of photoinduced force on polystyrene sphere by MWNT mechanical resonator.
We fabricated the MWNT - PS sphere composited device as shown in Fig.1 (a) inset. A PS
sphere with a dimeter of ~3 Pm was contacted with a very tip of a cantilevered MWNT
supported on an Au coated Si substrate under the direct observation of optical microscopy inair. During the contact, a focused laser (power: >3 mW, spot size: ~1 Pm) beam was irradiatedto the MWNT in order to heat the MWNT higher than melting temperature of PS (~240 oC).
As a result, we successfully welded the target PS sphere to a very tip of the MWNT.
The irradiated laser power dependence of the
0.01
50
resonance frequency was measured, where the resonancex50 obj.laser
frequency shift was estimated from the phase change of
0.008
0
CNT
PS
the resonance characteristic as shown in Fig. 1 (a). Note
0.006
-50
that the laser was focused on the PS sphere through an
0.004
-100
x50 objective lens with NA = 0.7 (Fig. 1 (a) inset).
Because of the gradient of the laser intensity, the spring
0.002
-150
constant of the mechanical resonator is modified
0
-200
15
15.1
15.2
15.3
15.4
according to the force gradient induced by the intensity
Frequency (kHz)gradient of laser light. Thus, the resonance frequency
0should be changed by the irradiation of the focused laser
72-10 Laser (PW)
beam to the PS sphere. Fig. 1(b) shows the irradiated
51 51
-20
laser power dependence of the resultant phase change of
31
31
-30
the fabricated resonator. The phase shift from 1.4 PW to
10
10
-40
1.4
72 PW corresponds to ~4 Hz increase of the resonance
1.4-50
frequency, which indicates that 0.1 PN/m of the force-60
gradient was acted on PS sphere at 72 PW. It is well-70
0
5 10 15 20 25 30
agreed with the theoretical value ( < 0.09 PN/m at 72
Time (s)PW) of the photon radiation pressure.
Fig. 1: (a) Drive frequency dependence
Thus, we have successfully measured the gradient force of the amplitude and the phase of theinduced by the photon radiation pressure less than 0.1 MWNT mechanical resonator. Inset
PN/m on the 3 Pm-diameter PS sphere using the MWNT shows a schematic image of themeasurement.
(b)
Laser
power
mechanical resonator.
[1] A. Yoshinaka et al, Appl. Phys. Lett. 98, 133103 (2011).
Corresponding Author: S. Akita
Tel & Fax: +81-72-254-9261, E-mail:akita@pe.osakafu-u.ac.jp- 93 -

dependence of the phase shift of theresonator.

2P-12
Photothermoelectric properties of carbon nanotubes terahertz imagers
and inspection applications○Daichi Suzuki1, 2, Shunri Oda2, Yukio Kawano2
1

2

Research Fellow of Japan Society for the Promotion of Science
QNERC and Dept. of EE, Tokyo institute of Technology, Tokyo 152-8552, Japan

Imaging and sensing applications based on terahertz (THz) technologies have recently
attracted as a powerful tool for non-destructive inspections in a large variety of fields including
security, the characterization of organic/inorganic materials, and medical and biologicalinspection [1]. We previously fabricated a carbon nanotube (CNT) THz detector based on
photothermoelectric effect (PTE) and achieved THz detection at room temperature [2][3], but
their fabrication process, wet-transfer process, is unsuitable for device integration, hampering
practical applications of THz imaging. In this paper, by using a wafer-scale and flexible CNTs
film [4], we studied a photothermoelectric properties of integrated THz detector array, anddemonstrated inspection applications of THz imaging such as visualizing metals concealed
behind opaque objects and a flexible/passive biometric scan of a human hand.
Figure 1 shows the sketch of a CNT THz detector and detected signal under room
temperature. The voltage/current signal was generated with THz irradiation via PTE. We thencontrolled the Fermi level of a CNTs film in order to maximize the Seebeck coefficient, because
the sensitivity of PTE is proportional to the Seebeck coefficient. By employing the field-effecttechniques, we succeeded in controlling the carrier density of a CNTs film with a few tens micro
meter thickness, and in enhancing the THz response. Also we analyzed the thermal conductionin the CNTs film via THz irradiation by both simulation and experiment, enabling us tominiaturize the detector size with keeping its sensitivity.
On the basis of the study about the physical properties of CNTs film, we produced a flexible
THz detector array, and demonstrated the inspection applications of THz imaging. We expectthat the THz technologies based on the nano-carbon materials will contribute to the field of
non-destructive inspections.
We thank ZEON Corporation for giving CNTs
film. This work was supported in part by the Japan
Science and Technology Agency, MEXT/JSPS
KAKENHI
Grant
Numbers
JP26286005,
JP16H00798, JP16H00906, JP16J09937, andSupport for Tokyotech Advanced Researchers(STAR).
[1] Y. Kawano, Contemporary Physics. 54, 143(2013).
[2] X. He, et al., Nano Lett. 14, 3953 (2014).
[3] K. J. Erikson, et al., ACS Nano. 9, 11618 (2015).
[4] K. Kobashi, et al., ACS Appl. Mater. Interfaces.
5, 12602 (2013).
Corresponding Author: Y. Kawano
Tel: +81-3-5734-3811, Fax: +81-3-5734-3811,
E-mail: kawano@pe.titech.ac.jp

Fig.1: Sketch of THz detector (inset) and detectedsignal for THz irradiation at 1.4 THz.
Voltage/current signal was generated with THz
irradiation.

- 94 -

2P-13
Flexible heater and temperature sensor for temperature range
higher than 100 °C using multiwall carbon nanotube
żDaiki Kobayashi, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai, Osaka 599-8531 Japan

Electricity (W)o'R/R (%)

Flexible electronics device is one of emerging fields of recent electronic devices. The
research of flexible film heater and thermal sensor can widen possibility of application
flexible device. Here, we report on flexible film heaters which can temperature sensing fortemperature range higher than 100 °C using multi-wall carbon nanotubes and polyimide film.
The film heater was composed of a sandwich structure of polyimide (PI)-CNT film-PI(total 4.3 Pm thick) as shown in Fig. 1, where the PI layers were formed by spin-coating on a
Si substrate. Note that multiwall CNT film was formed by spray coating method. Finally, thefree standing film heater was obtained by exfoliating the film heater from the substrate.
Figure 2 shows the temperature dependence ofelectrical resistances measured at heating and coolingPIprocess. From the slope, the temperature coefficientCNTof the resistance is ~ 700 ppm/K, which isPIcomparable to that of CNT yarn [1]. One of origins ofFig. 1 Cross-sectional SEM image of thethe temperature dependence is the presence of
PI/CNT/PI film sensor/heater.
shallow scattering sites on the current path owing to20potential fluctuations. In this case, the scattering
Heating -0.084(%/ΥΥ)-2probability should decrease at higher temperatures
Cooling -0.068(%/Υ)-4owing to the thermalization of charge carriers.
-6
Another possible origin is the decrease in the contact-8
resistance between CNTs. The sheet resistance of our-10
CNT film composite (~ 200 :/sq.) is low enough to-12
perform the Joule heating. Here we demonstrate the-14pressure gauge application based on the heat
20 40 60 80 100120140160180
exchange between the surrounding gases similar toTemperature(䜪C)the Pirani gauge. Figure 3 shows gas pressure
Fig.2 Temperature dependence of the electricaldependence of the electricity for maintaining the resistance.
temperature to ~60 °C. The electricity increases with
0.4
in increasing the surrounding gas pressure, which is
0.35
most likely due to the heat exchange between theheater and the gas.
0.3
Thus, we have successfully fabricated the
0.25
MWCNT film heater and thermal sensor for
temperature range higher than 100 °C through simple
0.2
fabrication process using spray coating method.
Acknowledgements This work was partially supported
by KAKENHI Grant Number 25286010, 16H00920 and
16H06504. Reference [1] Y. Wada et al, APEX 9, 085001(2016). Corresponding Author: D.Kobayashi, Tel: +81-72254-9261, E-mail:kobayashi-4@pe.osakafu-u.ac.jp- 95 -

0.15 -3
10

10-1

101

103

Pressure (Pa)105

Fig.3 Pressure dependence of the electricity
for maintaining the temperature at 60 °C.

2P-14Novel method to detect dopamine with high sensitivity
based on adsorption onto carbon nanotube surface○Takuya Ushiyama1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

2

Current (nA)A small amount of neurotransmitters play essential role in brain to convey information froma neuron to neuron. Their unusual concentration, however, causes neuropathies such as
Parkinson disease and schizophrenia. Monitoring the concentration of neurotransmitters is
helpful to treat patients and to understand the causes of such neuropathies. Carbon nanotube(CNT) is known as an excellent material for electrochemical sensors to detect dopamine (DA),one of important neurotransmitters, because of its electro-catalysis and rapid electron transfer
kinetics [1]. Previous electrochemical DA sensors based on CNT have demonstrated thedetection of DA in nM regime [2]. In this work, we propose a novel method to detect DA in
sub-nM regime on the basis of adsorption of DA onto CNT surface.
We fabricated electrochemical sensors with clean single-walled CNTs on a plastic substrate[3]. After forming a CNT thin film by the dry transfer process based on floating-catalyst CVD[4], the sensor electrodes were fabricated by conventional lithography process. A SiO2
protection layer was employed to prevent the CNT film from contamination during the
fabrication process.
The proposed DA-detection method consists of two steps, that is, the adsorption anddetection steps. In the adsorption step, DA is adsorbed onto the CNT surface by applying bias
voltage in phosphate buffer saline (PBS) solution containing DA. Here, we applied -0.1 V (vs.
Ag/AgCl) to CNT electrode for 600 s. It is known that electrochemically active catechol isadsorbed on activated carbon [5]. After washing CNT electrode by deionized water, the cyclic
voltammetry was carried out in 2-M H2SO4 solution in the detection step. Figure 1 shows thevoltammogram obtained by scanning potential from 0 to 0.5 V (vs. Ag/AgCl). A fine peakcorresponding to oxidation current from adsorbing DA was clearly obtained for the 100-pM DA
sample (solid line), while no peak was observed forin 2 M H2SO4
20
100 pM DA
the control sample (dotted line). The result
15
demonstrates higher sensitivity in DA detection thanprevious reports by factor of 10 [3].
105[1] C. B. Jacobs et al., Analyst, 136, 3557 (2011)
Control[2] Y. Xu et al., Microchim. Acta, 182, 1797 (2015)
0
Scan rate: 50 mV/s[3] T. Ushiyama et al., The 50th FNTG General Symp. 2P-16 (2015)
0.0
0.1
0.2
0.3
0.4
0.5
[4] A. Kaskela et al., Nano Lett., 10, 4349 (2010)
Potential(V)[5] A. S. Kumar et al., J. Electroanal. Chem., 641, 131 (2010)
Fig. 1 Voltammogram of DA sample (solid line)
Corresponding Author: Y. Ohno
and control (dotted line) measured by the novel
Phone & Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp
method.

- 96 -

2P-15Single-walled carbon nanotube synthesisby alcohol catalytic CVD in high vacuum using Rh catalystsżTakahiro Maruyama1, Akinari Kozawa2, Takahiro Saida1, Shigeya Naritsuka2,
Yoko Iizumi, 3 Toshiya Okazaki3, Sumio Iijima4
1

2

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502,
Japan2
3
Nanotube Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8565, Japan
4
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

Single-walled carbon nanotubes (SWCNTs) have been anticipated for applications toelectronic devices because of their tremendous electrical properties. To realize SWCNT
devices, it is necessary to reduce the growth temperature below 500ºC. Previously, we
reported SWCNT growth by alcohol catalytic chemical vapor deposition (ACCVD) using Pt
catalysts [1]. However, the SWCNT yield from Pt catalysts decreased drastically below 600ºC.
Recently, theoretical researches showed that there is a low dissociation barrier for ethanol
molecules on Rh surface [2]. In this study, we carried out SWCNT growth by a gas
source-type ACCVD using Rh catalysts. By controlling the ethanol pressure precisely, we
attained SWCNT growth below 500ºC.
Rh catalysts were deposited on Al2O3/SiO2/Si substrates using rf sputtering deposition.
SWCNT growth was carried out on these substrates using a gas source-type ACCVD system.
The grown SWCNTs were characterized using SEM, Raman and photoluminescence.
Fig. 1 shows a SEM image of SWCNTs grown at 460ºC. fibrous products were observedon the substrates. Taking into account Raman spectra, these were SWCNTs grown from Rh
catalysts and the diameters were distributed between 1.0 and 1.2 nm. Below 600ºC, thegrowth rate decreased with the reduction of the growth temperature, but the SWCNT yieldfrom Rh was higher than that from Pt. The activation energy for SWCNT growth from Rh
catalysts estimated from the growth rate was lower than that from Pt, resulting in the higher
SWCNT yield in the low temperature region.
This work was partially supported by KAKENHI, a Grant-in-Aid for Challenging
Exploratory Research (25600031) from the JSPS and the MEXT Supported Program for theStrategic Research Foundation at Private Universities. Part of this work was conducted at theInstitute for Molecular Science (IMS), supported by the “Nanotechnology Platform” of the
MEXT.
[1] T. Maruyama et al. Carbon 96, 6 (2016).
[2] J. H. Wang et al. J. Phys. Chem. C 113, 6681 (2009).
Corresponding Author: T. Maruyama
Tel: +81-52-838-2386, Fax: +81-52-832-1179
E-mail: takamaru@meijo-u.ac.jp

Fig.1: SEM image of SWCNTs grownfrom Rh catalsts at 460ºC.

- 97 -

2P-16
Combinatorial screening of binary metal catalyst
for chirality-selective growth of single-wall carbon nanotubes○Michiko Edo1, Hisashi Sugime2, and Suguru Noda1
12

Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan
Waseda Institute for Advanced Study, Waseda University, Tokyo 169-8050, Japan

Chirality-controlled growth of single-wall carbon nanotubes (SWCNTs) is desired formany applications, especially optoelectronic devices and transistors. Post-growth chirality
separation has been extensively studied, however, direct growth of SWCNTs with single
chirality is another attractive option. Chirality-controlled growth of SWCNTs was previously
reported using cobalt (Co) and tungsten (W) binary catalyst [1]. If both the amount and thecomposition of the catalyst, chiral selectivity and production yield of SWCNTs will beenhanced further.
In this research, we applied our combinatorial masked deposition (CMD) method [2] tooptimize the Co-W catalyst conditions on a single substrate. By placing a physical shadow
mask with slit above the substrate during RF sputtering, we changed the nominal thickness ofboth Co (0.004–1.4 nm) and W (0.006–1.3 nm) by >two orders of magnitude on a 15u15 mm2
substrate. Appling this method to x- and y-axes, we made orthogonal thickness/composition
profiles of Co and W on SiO2(90 nm)/Si substrates (Fig. 1). After annealing them with H2, wegrew SWCNTs via chemical vapor deposition (CVD) by feeding pure ethanol at differentpressures (1, 3, 10 Torr) and temperatures(700, 800, 900 and 1000 °C) (total 12
conditions). Each sample was analyzed by
Raman spectrum at 10u10 points byautomated mapping to roughly searchcatalyst conditions for narrow chirality
distributions, which were then analyzed more
carefully using three different wavelengths(488, 514, and 633 nm) to search conditions Fig. 1: A combinatorial sample after CVD using 1 Torrfor single radial breathing mode (RBM) peak. ethanol at 900 qC.
Fig. 2 shows typical Raman spectra of suchcareful analysis at nine points with a pitch of
150 μm. In most areas including Area A,
multiple RBM peaks were observed (Fig. 2a),whereas an intense RBM peak was observed
at 195–197 cm–1 in Area B with 0.47–0.54
nm Co and little W (Fig.2b). According to
the Kataura plot [3], it is expected that (12,6) SWCNTs grew selectively. We will reportsuch analysis for different CVD conditions in
the presentation.
[1] F. Yang et al., Nature, 510, 522 (2014).
[2] S. Noda, et al., Carbon 44, 1414 (2006).
[3] H. Kataura, et al, Synthetic Met. 103, 2555 (1999).
Corresponding Author: S. Noda,
Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp

Fig. 2: Raman spectra at Areas A (a) and B (b) in Fig. 1
with three different excitation wavelengths.

- 98 -

2P-17
Substrate design for high efficiency
single walled carbon nanotube synthesisżNaoyuki Matsumoto1, Azusa Oshima1, Sachiko Ishizawa1, Kenji Hata1, Don Futaba1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8565, JapanFor high efficiency growth for single-walled carbon nanotubes (SWCNTs), immense
research has been reported on the ambient, e.g. the hydrocarbon carbon feedstock, additive
gases (water and carbon dioxide etc.), plasmas, hot filament, and the substrate-catalyst system,e.g. catalyst buffer materials, porous substrates, alloyed catalysts [1,2]. With the developmentof the water-assisted (super-growth) method, high yield synthesis for flat substrates could beenvisioned [3]. However, uniform source gas delivery to all surfaces of the substrates
represents a significant issue in the scaling of uniform height and qualities (SW)CNTs
synthesis from flat substrates.
Here, as an alternative to flat substrates, we investigated the use metal (stainless steel)meshes for high efficiency SWCNT synthesis. The (metal) mesh provides a unique substrate
structure, which combines both a rounded surface suitable for non-turbulent gas flow, as wellas, high surface area compared with a flat substrate. Our results have found the high growthrate synthesis of SWCNT forest with an overall yield surpassing that of flat substrates (> 4.4
mg/cm2): long SWCNTs with ~3.0 mm could be grown in 10 min at the optimum growth
conditions (total flow: 1500 sccm, C2H2: 9 sccm, H2O: 200 sccm, N2: 1291 sccm at 775 oC).
Due to the nature of stainless steel meshes, both the diameter and the spacing (open porosity)
were used to balance the gas conductance and total surface area on substrate to achieve highefficient SWCNT growths and yields.
Our results showed that although high-speed SWCNT synthesis was possible, abrupt
strain-induced growth termination occurred due to the contact between adjacent SWCNT
forests. Furthermore, although decrease in spacing was initially expected for higher yield
growth, decreased spacing, which caused by CNT growth, led to decreased gas conductanceagainst catalyst on (mesh) substrate and therefore approaching the continuum flat substrateextreme.
This approach demonstrates an alternative to flat substrates as well as rational design of thesubstrate structure for high efficient (yield) synthesis.
[1] N. Matsumoto et al. Nanomaterials, 5, 1200 (2015).
[2] K. Hasegawa et al. ACS Nano, 2, 975 (2011).
[3] K. Hata, D. N. Futaba et al. Science, 306, 1362 (2004).
Corresponding Author: N. Matsumoto
Tel: +81-29-861-4656, Fax: +81-29-861-4851
E-mail: matsumoto-naoyuki@aist.go.jp- 99 -

2P-18Control of catalyst surface states towards synthesis of single chirality
single-walled carbon nanotubes using plasma CVD○ Bin Xu, Toshiro Kaneko, Toshiaki Kato
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Single-walled carbon nanotubes (SWNTs) have many outstanding properties stemmingfrom its unique one dimension structures, which make them as a promising candidate ofmaterial for high performance optoelectrical devices. However, as the physical properties of
SWNTs strongly depend on the chirality, obtaining specific single chirality SWNTs with highquality is regarded as a critical issue in thisscientific community. Recent years, our
group
has
been
workingon
chirality-controlled SWNTs synthesis andwe have developed some unique technics
towards
thegrowthofnarrowchirality-distributed SWNTs using the
precise time-controlled synthesis withplasma CVD [1-3], resulting in thecontrolled synthesis of (6,4) dominant and(6,5) dominant SWNTs (Fig. 1). For thefurther control of the SWNTs chirality
distribution, it is important to elucidate thecorrelation of catalyst structures and surface
states with the chirality species. Based onsuchbackground,systematicalinvestigations were carried out aiming forfinding out the correlation between catalyst
states and chirality distributions for (6,4)
dominant and (6,5) dominant samples. The
catalyst structures and surface state were
Typicalphotoluminescence-excitation
analyzed using atomic force microscopy Fig.1:
mapping of (a) (6,4) dominant and (b) (6,5)(AFM), X-ray photoelectron spectroscopy
dominant SWNTs grown by plasma CVD.
(XPS),
andtransmission
electronmicroscopy (TEM). We find out that there is a clear difference in the catalyst structures
between (6,4) dominant and (6,5) dominant SWNTs. Such narrow chirality-distributed
SWNTs are very sensitive to the surface state of catalyst, which can be tuned by theappropriate surface treatments. We think that our findings can contribute to the growth of
single chirality SWNTs.
[1] Z. Ghorannevis, T. Kato, T. Kaneko, and R. Hatakeyama, J. Am. Chem. Soc. 132, 9570 (2010).
[2] T. Kato and R. Hatakeyama, ACS Nano 4, 7395 (2010).
[3] B. Xu, T. Kato, K. Murakoshi, and T. Kaneko, J. Plasma Fusion Res. 9, 1206075 (2014).
Corresponding Author: B. Xu
Tel: +81-022-795-7046, Fax: +81-022-263-9225
E-mail: xu12@ecei.tohoku.ac.jp- 100 -

2P-19First-principles calculations of electronic states and solid state NMR
parameters in alkali halides encapsulated single-walled carbon nanotubes○Eita Yokokura 1, Yosuke Kataoka 1 and Hironori Ogata1,2
12Graduate School of Engineering, Hosei University, Koganei, 184-8584, Japan
Research Center for Micro-Nano Technology, Hosei University, Koganei, 184-0003, Japan

Single-walled carbon nanotubes (SWNTs) have a hollow space in the nanometer size thatcan be encapsulated various functional molecules. The conﬁned molecular assemblies may
exhibit unique low-dimensional structures and solid state properties that can not be realized in
the bulk. Synthesis and structure of alkali halide encapsulated SWNTs have been reported[1-4]. However, the systematic studies of tube diameter dependence, chirality dependence andtemperature dependence on the local structures and electronic properties of alkali halides
encapsulated in SWNTs have not been reported. In this study, we report the effects of thediameter and chirality of SWNTs on the local structures and electronic properties of theencapsulated alkali halides by using first-principles DFT calculations.
We calculated the band structures and solid 133Cs- or 127I-NMR parameters (NMR chemical
sift tensors and electric field gradient (EFG) tensors. All of the calculations were done byusing a Open-Source computer code package PWscf and GIPAW in Quantum ESPRESSO.
We used the pseudo potential methods.
Table 1. shows the chiral vector dependence of 133Cs-NMR chemical shift tensors in
CsI@SWNT. Figure 1 shows the band structure and electronic density of states of
CsI@(10,10)SWNT.
Detailed results will be presented.
Table 1. 133Cs-NMR chemical sift tensors in CsI@SWNT
δiso (ppm)ԥδanis=3/2(δ33-δiso) (ppm)㻌 Materials㻌 㻌 㻌 㻌 㻌 㻌bulkCsI00
CsI@(6, 6)SWNT-187.68
786.75
CsI@(8, 8)SWNT-50.41591.75
CsI@(9, 9)SWNT
90±5
119±5
CsI@(10, 10)SWNT
9.12
236.75
Fig.1 Band structure and DOS of CsI@(10,10)SWNT.

References:[1] J. Sloan, M.C. Novotny, Chem. Phys. Lett., 329 (2000)61.
[2] M. Wilson, P.A. Madden, J. Am. Chem. Soc., 123 (2001)2101.
[3] Ryosuke Senga, Hannu-Pekka Komsa, Zheng Liu, Kaori Hirose-Takai, Arkady V. Krasheninnikov
and Kazu Suenaga, Nature Materials,13(2014)1050.
[4] ChiYung Yam, ChiChiu Ma, XiuJun Wang and GuanHua Chen . Appl. Phys. Lett. 85, 4484 (2004)
Corresponding Author: H. Ogata Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail:hogata@hosei.ac.jp- 101 -

2P-20&9'JURZWKRIQLWURJHQGRSHGPXOWLOD\HUHGJUDSKHQHE\PL[LQJWKH
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7DNDKLUR<RVKLGD%XQ7VXFKL\Dż 6KXQML%DQGRZ

Department of Applied Chemistry, and of General Physics,Meijo University, Nagoya 468-8502, Japan

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&RUUHVSRQGLQJ$XWKRU6%DQGRZ(PDLOEDQGRZ#PHLMRXDFMS7HO - 102 -

2P-21
Effect of crystallization of Ni catalyst
on low-temperature direct-precipitation of multilayer graphene○Jumpei Yamada1, Yuki Ueda1, Kyosuke Fujiwara1, Daichi Yamamoto1,
Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University,
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Because of its outstanding characteristics, graphene is highly expected to apply in a wide
range of fields, such as electrical wiring, and transparent electrodes of light emitting diodes(LEDs). In recent years, a direct growth of graphene on a substrate has been studied for theadvantages on device applications. We also succeeded in a direct growth of multilayer grapheneby precipitation method using W capping layer [1]. In order to avoid a thermal-destruction ofdevices for the fabrication of opto-electric integrated circuits. It is necessary to lower theprocess temperature, for example, less than 700 oC. In this study, to directly grow the multilayer
graphene at low temperature, the effects of crystallization of Ni catalyst and the cooling rate
after growth were studied.
Ni (300 nm) layer was deposited on a sapphire (0001) substrate using electron-beamdeposition. After the crystallization of the Ni layer, amorphous carbon (a-C) (1 nm) and W (20nm) were deposited. Then, the samples were annealed at 700 oC for 30 min in vacuum andcooled with rapid or slow rates.
Fig. 1 shows D/G ratio of Raman spectra of the grown samples, the D/G ratio was
successfully decreased by the slow cooling of the Ni crystallization, and it further decreased by
the combination of these two processes. The grain size of the graphene was probably increasedby the sooth and large-size of grains of the crystallized Ni layer. The small supersaturation
during the precipitation by the slow cooling was also beneficial to decrease the density of
nucleation. The cause of the quality-improvement of the precipitated graphene will be discussed
at the conference site.

Figure 1. D/G ratio vs. precipitation processes[1] J. Yamada et al, MRS Fall Meeting & Exhibit, (2015) Q3.69.
Acknowledgement: This work was supported in part by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011.
Corresponding Author: J.Yamada, E-mail: jjjjjjyyyyyy119@gmail.com- 103 -

2P-22
Diffusion of Pt atoms on non-metallic atom-doped graphene support
Syun Hasegawa , Yuji Kunisada , Norihito Sakaguchi
Department of Engineering, Hokkaido University, Sapporo 060-0810, Japan

Introduction Hydrogen is a promising candidate for sustainable energy source. A polymer
electrode fuel cell (PEFC) has drawn a great deal of attention because it can generate
electricity effectively using hydrogen. It’s known that Pt atoms, main catalyst of PEFC,
diffuse and aggregate during operation due to weak bonding between Pt atom and carbon
support, which causes catalyst degradation. Recently, it has been reported that non-metallic
atoms, such as N and B, doped graphene support prevents such diffusion and agglomeration.[1] In this study, we investigate diffusion behaviors of Pt atoms on non- metallic atomdoped graphene support using first principle calculation based on density functional theory(DFT).
Methods DFT calculations were performed using the Vienna ab initio Simulation Package(VASP). A graphene 4 × 4 supercell with periodic boundary conditions was used. The Pt /graphene systems were separated from their periodic images in the perpendicular direction toa graphene sheet with vacuum space of 15 ύ. Non-metallic atom-doped graphene wasmodeled substituting one carbon atom in graphene with one non- metallic atom, i.e. B, N, Si,
P and S.

0

S㻌

P㻌

Si㻌

B㻌

N㻌

Potential energy (eV)㻌

Adsorption energy (eV) 㻌

Results Fig.1 shows the calculated adsorption energy of Pt atoms on non-metallic
atom-doped graphene. Fig.2 shows the calculated diffusion barrier of Pt atom on non-metallic
atom-doped graphene. Fig.1 and Fig.2 indicate that S, P, Si doped graphene support bonds to
Pt atoms more strongly and prevent Pt diffusion more effectively than pristine graphene.
These results suggestThe
gg that S,, P,, Si dopedp ggraphene is promising PEFC support.

-1
-2
-3
-4

2.5
2

Si㻌

2

P㻌
S㻌

1.5
1
1

B㻌

N㻌

0.5
0

C㻌

0
0

2

4

6

8

10

12

Fig.1 Adsorption energy of Pt atom at the most stable

Diffusion distance (ύ)
Fig.2 Potential energy change with diffusion of Pt

adsorption site on non-metallic atoms doped graphene.

atom on non-metallic atom-doped graphene. The

The origin of adsorption energy is set to the adsorp-

origin of potential energy is set to the energy whichtion energy of Pt atom on pristine graphene.

Pt atom adsorbs on the most stable site.

[1] L.-S. Zhang, X.-Q. Liang, W.-G. Song, Z.-Y. Wu. Phys. Chem. Chem. Phys. 12, 12055 (2010).
Corresponding Author: N. Sakaguchi
Tel: 011-706-6768

E-mail: sakaguchi(a)eng.hokudai.ac.jp- 104 -

2P-23
Electrochemical characteristics of enzyme/graphene electrodes○Noritoshi Nakagawa, Kouhei Yanai, Masahiro Hirano, Shinji Koh
Department of Electrical Engineering and Electronics,
Aoyama Gakuin University, Sagamihara 252-5258, Japan
Graphene is attractive as electrode materials for biofuel cells because of its high electricalconductivity and chemical stability. The enzyme electrode with high current density andexcellent reproducibility can be fabricated by utilizing two-dimensional structure of graphenewith a large specific surface area and high uniformity. Stable immobilization of the enzyme isimportant in applications of enzyme-based biofuel cells. To our knowledge, there are few
reports on evaluation of the electrochemical characteristics of enzyme-immobilized graphene
planer sheets prepared by chemical vapor deposition (CVD). We focus on CVD-growngraphene sheets as electrode materials for biofuel cells because they are highly uniform, andthe shape and size can be accurately controlled by conventional photolithography processes.
In this study, we immobilized enzyme on CVD-grown graphene sheets by physical adsorption
and evaluated electrochemical characteristics of the enzyme/graphene electrodes.
Graphene sheets were grown by CVD on Cu foil. To evaluate the intrinsic electrochemical
characteristics, the graphene sheets were transferred onto electrochemically inert SiO2/Si
substrates by a using polymethyl methacrylate (PMMA) method. The transferred graphenesheets were confirmed to be monolayer by Raman spectroscopy. We immobilized an enzyme,
glucose oxidase (GOx), in two ways. One was the easiest procedure, deposition adsorption, in
which the graphene sheets were soaked for 12 h in GOx solution [1]. The GOx/graphene
electrodes were covered by cellulose membranes to prevent desorption of GOx. The otherprocedure used noncovalent functionalization of the graphene surface. 1-pyrenebutanoicacid
succinimidyl ester (PBSE) was used as a chemical linker on graphene [2]. The pyrenyl groupof PBSE interacts strongly with the graphene surface by π-stacking and the succinimidyl ester
parts combine with the amino base of GOx. The graphene sheets were soaked in 1 mM PBSE
in pure methanol for 3 h followed by soaking in GOx solution for 12 h. Electrochemical
characteristics of these electrodes were evaluated by cyclic voltammetry (CV) at a scan rate of
10 mV/s in phosphate buffered saline (PBS:pH 7.0) containing glucose of 25 mM.
Fig. 1 shows the cyclic voltammograms recorded using graphene (dotted line),
GOx/graphene (dashed line), and GOx/PBSE/graphene (straight line) electrodes. GOx
catalyzes the oxidation reaction of glucose and current due to the oxidation reaction is
generated by the addition of glucose. As shown in Fig. 1, the current responses were clearlyobserved for two enzyme-immobilized electrodes, in which the current density of theGOx/PBSE/graphene electrode had twice as highas that of the GOx/graphene electrode. The result
suggested that the immobilization of the enzyme
using PBSE formed strong connectivity between
graphene and the enzyme, leading to a higher
current density.
[1] A. Zebra et al., nature communications. 2, 370 (2006).
[2] R. J. Chen et al., J. Am. Chem. Soc., 123, 3838 (2001).
Corresponding Author: Shinji Koh
Tel: +81-42-759-6251, Fax: +81-42-759-6251,
E-mail: koh@ee.aoyama.ac.jp- 105 -

Fig.1: Cyclic voltammograms for 3 electrodes

2P-24
Electrochemical properties of CVD-grown monolayer graphene
oxidized by UV/O3 treatment○Kouhei Yanai, Noritoshi Nakagawa, and Shinji Koh
Department of Electrical Engineering and Electronics,
Aoyama Gakuin University, Sagamihara, 252-5258, Japan
Electrochemical properties of chemical vapor deposition (CVD) grown monolayer
graphene electrodes oxidized by ultraviolet (UV)/ozone (O3) treatment were studied.
Graphene has attracted considerable attention as electrode materials for fuel cells andcapacitors due to its high electrical conductivity, chemical and mechanical stability, and highspecific surface area. Defects involving edge planes and the oxygen-containing functionalgroups such as hydroxyl, carboxyl and epoxide groups are key factors that determine
electrochemical properties of graphene [1]. This work investigated electrochemical propertiesof CVD-grown monolayer graphene sheets, in which defects were introduced using UV/O3
treatment, focusing on its application to electrodes for fuel cells.
Graphene sheets were prepared by CVD on copper foils and transferred onto SiO2/Si
substrates via a poly-methyl methacrylate (PMMA) assisted transfer method. Graphene sheets
were oxidized by UV/O3 treatment at room temperature. The presence of defects after
oxidization was verified by Raman spectroscopy. The electrochemical properties were
evaluated by cyclic voltammetry. We used a hexa-ammine-ruthenium (III) solution containing
potassium chloride as a supporting electrolyte, which was degassed with oxygen-free nitrogen.
The reaction rate constants k0, which allow to categorize reaction rate of graphene electrodes
as reversible, quasi-reversible or irreversible systems, were estimated as a functional of redox
peak separations 'Ep from cyclic voltammograms using Nicholson’s theorem [2].
Figure 1 shows cyclic voltammograms and Raman spectra of the pristine graphene, 2 min
and 9 min UV/O3 treated graphene. The redox peak separations 'Ep were 194 mV, 88 mV and
270 mV, respectively. The intensity of D band as shown in the inset of Fig.1, which is
ascribed to the structural defects, increased in proportion to the UV/O3 treatment time. The
results showed that 2 min UV/O3 treatment led to a small 'Ep, and on the other hands, 9 mintreatment increased 'Ep. The reaction rate constant k0 of the graphene electrode after 2 mintreatment was estimated to be 9.410-3 cm/s, which was quite close to reversible systems(k0 > 10-2 cm/s) such as platinum electrodes.
The electrochemical property was improved
due to the edge planes on the graphenesurface induced by oxidization. The results
suggested that the UV/O3 treated graphene
electrodes have potential for applications toelectrodes of fuel cells.
[1] W. Song et al., Phys. Chem. Chem. Phys.,
15, 4799 (2013).
[2] D. Brownson et al., Nanoscale, 6, 1607 (2014).
Corresponding Author: Shinji Koh
Tel: +81-42-759-6251, Fax: +81-42-759-6251,
E-mail: koh@ee.aoyama.ac.jp

Fig.1 cyclic voltammograms of UV/O3-treatedgraphene sheets. Inset shows Raman spectra.

- 106 -

2P-25The effect of graphene on growth and viability of bacteria and yeast○Kyohei Mizobuchi1, Noritoshi Nakagawa2, Masahiro Hirano2,
Fumiyoshi Abe1, Shinji Koh2
1
Department of Chemistry and Biological Science,2
Department of Electrical Engineering and Electronics,
Aoyama Gakuin University, Sagamihara 252-5258, Japan
Graphene has attracted much attention for biotechnological applications, such as
biosensors and biofuel cells. A significant issue for implementation of these applications is tounderstand the possible interactions of biological components and living organisms withgraphene [1]. Antibacterial activity of graphene oxide [2] and graphene films [3] and toxicity
of graphene-related materials [4,5] have been reported. However, the understanding of
bio-compatibility and bio-affinity of graphene and its derivatives is still insufficient. In thisstudy, we investigated the occurrence and significance of graphene sheets or powders on
growth and viability of gram-negative bacterium Escherichia coli, gram-positive bacterium
Bacillus subtilis and yeast Saccharomyces cerevisiae.
Graphene powder, graphene oxide (GO), graphene oxide treated with K2CO3 (GO-base)and reduced graphene oxide (rGO) were thoroughly washed with MilliQ water and autoclavedprior to use. Cells of individual species were cultured in growth media with shaking in thepresence (800 μg/mL) or absence of the graphene derivatives for overnight. Then, smallaliquots of the cultures were spread on plates to form colonies for counting. We found that thegraphene powder increased the final cell density twofold in E. coli while other graphene
derivatives slightly reduced it. There was no significant effect of the graphenes on the final
cell density in B. subtilis and S. cerevisiae (Fig. 1). The result suggests that the graphenes do
not have an adverse effect on growth and viability of the three microbial species as far as
tested under the given conditions.

[1] K. Kostarelos and K. Novoselov, Science 344, 261 (2014).
[2] W. Hu et al, ACS Nano 4, 4317 (2010).
[3] J. Li et al, Sci. Rep. 4, 4359 (2014).
[4] V.C. Sanchez et al, Chem. Res. Toxicol. 25, 15 (2012).
[5] S. Gurunathan and J.H. Kim, Int. J. Nanomedicine, 11, 1927 (2016).
Corresponding Author: Shinji Koh
Tel: +81-42-759-6251, Fax: +81-42-759-6251,
E-mail: koh@ee.aoyama.ac.jp- 107 -

2P-26
Edge-disorder effect on Id-Vg characteristics of GNR-FETs○Kengo Takashima1, Takahiro Yamamoto1, 2
12

Department of Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
Department of Liberal Arts, Tokyo University of Science, Tokyo 125-8585, Japan

Graphene is expected to be a channel material of field effect transistors (FETs) because of its
high carrier mobility. However, no band gap of the graphene is a serious problem for its FET
application. One possible way to overcome the gap-opening problem is to process it in theform of a nanometer width ribbon, referred as graphene nanoribbons (GNRs). They have beensuccessfully applied to FETs with high on-off ratio. We recently reported that resistance of
GNR increase dramatically with edge disorder [1][2]. However, the edge-disorder effect on
the GNR-FET properties has not been clarified yet.
In this study, we have theoretically investigated the influence of edge-disorder on Id-Vg
characteristics (Id: drain current, Vg: gate voltage) of GNR-FETs using the nonequilibrium
Green’s function method combined with a tight-binding model [3]. In our simulation,edge-disordered armchair GNRs (AGNR) were used as channel materials of FETs, and theedge vacancies were modeled by adding or removing pairs of carbon atoms at the edges (Fig.
1). We have calculated Id-Vg characteristics of 2.21nm width AGNR-FETs by changing theroughness concentration P from 0% to 30% (Fig. 2). We found that a variance of on current(ΔIon) is independent of Ion and ΔIon is constant (universal conductance fluctuation), where P isunder 10 %. On the other hand, when P exceeds 10 %, ΔIon and variance of subthresholdbecome large drastically.

Fig. 1 Edge-disordered AGNR-FET

Fig. 2 Id-Vg curves of edge-disordered AGNR-FETs

References:[1] K. Takashima and T. Yamamoto, APL., 104, 093105 (2014).
[2] K. Takashima, S. Konabe and T. Yamamoto, JAP., 119, 024301 (2016).
[3] P. Koskinen and V. Mäkinen, Computational Materials Science, 47, 237 (2009)
Corresponding Author: T. Yamamoto
E-mail: takahiro@rs.tus.ac.jp- 108 -

2P-27
Effect of metal nanoparticles on carrier accumulation in graphene
under an electric field
Manaho Matsubara and Susumu Okada
Graduate School of Pure & Applied Sciences, University of Tsukuba, Tsukuba 305-8571
Japan
Graphene has been keeping a premier position not only in the field of the low-dimensional
sciences but also in the electronic device engineering due to its unique structural and electronic
properties. For the fundamental and applied sciences of graphene, it is mandatory to precisely
control their electronic structure by external conditions. In particular, the band gap engineeringand the Fermi level tuning are highly important. In usual situations, graphene inherently
possesses hybrid structure with foreign materials, such as insulating substrate andatoms/molecules. Under such hybrid structures, the microscopic mechanism of the carrier
injection into graphene is not fully elucidated yet. Thus, in the present work, we aim to givetheoretical insight into the electronic properties of graphene hybrids, which consist of grapheneand Al nanoparticles, under the external electric field, using the density functional theory
combinedwitheffective

screening

mediummethod. To simulate the graphene hybrid underthe electric filed, we consider a structural model
shown in Fig. 1, in which an Al nanoparticle (Al4)is physically adsorbed on graphene with theFig.1: Structural models of graphene adsorbing Al4
with top (left) and bottom (right) gate electrodes.

optimum spacing as a charged impurity.
Our calculations show that the EF is located above the Dirac cone, because of the electrontransfer from Al nanoparticle to graphene. The characteristic electronic structure indicates thatthe electrons injected by the electric field is not accumulated into graphene but accommodated
into the Al nanoparticle. However, byinvestigating

thedistribution

of

the

accumulated electrons under the electricfield, we find that the distribution depends
on relative arrangement of the gate

Fig. 2: Isosurfaces of accumulated carriers of graphene adsorbing
Al4 with the top (left) and bottom (right) gate electrodes.

electrode to the Al nanoparticle (Fig. 2).
Corresponding author: M. Matsubara
Email: mmatsubara@comas.frsc.tsukuba.ac.jp- 109 -

2P-28Probing interface strain in graphene and boron nitride
in-plane heterostructuresżShintaro Yoshimura1, Yu Kobayashi1, Shun Ogawa1, Shogo Sasaki1, Yutaka Maniwa1,
Yasumitsu Miyata1,2
1Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
JST, PRESTO, Kawaguchi, 332-0012, Japan

Graphene and hexagonal boron nitride (hBN) in-plane heterostructures have attracted muchattention due to their unique physical properties and applications for atomically thin circuitry[1,2]. Because of the presence of lattice mismatch of around 2% between graphene and hBN,
the heterostructures should have lattice strain around interface. However, such interface strain
has never been observed so far, in spite of its impact on interface properties. To probe theinterface strain, we have focused our attention on the Raman spectra of graphene. In particular,
it is known that the defect-induced Raman mode (D mode) is selectively enhanced at theedges of graphene grains due to the double resonance processes [3]. For this reason, we can
expect that the D mode can be used to probe the structural and electrical properties at theinterfaces of graphene-based lateral heterostructures. In this work, we have investigated theinterface strain of graphene and hBN in-plane heterostructures by using Raman spectroscopy.
To prepare the in-plane heterostructures, graphene grains were firstly grown on Cu foil bychemical vapor deposition (CVD) with methane, and then, hBN was grown from the grapheneedges by CVD of ammonia borane (Fig.1a), as reported in our previous study [1]. The
samples were transferred from Cu foil to SiO2/Si substrates for Raman measurement (Fig. 1b).
In Raman spectra (Fig. 1c), we found that the edge and bulk of graphene before hBN growth
have almost the same peak positions of D mode. In contrast, only the D-mode of G/hBN
interface shows downshift of 6~8 cm-1. This D mode downshift suggests the presence oftensile strain at the heterointerface. In the presentation, the details of the changes in Raman
spectra and origin of D mode softening will be discussed.

Fig. 1 (a) Structure modal and (b) optical image of CVD-grown graphene/hBN in-plane heterostructure. (c)Normalized Raman spectra of (i) bulk and (ii) edge of graphene before hBN growth, (iii) bulk and (iv) edge ofgraphene after hBN growth.
[1] Y. Miyata et al., Appl. Phys. Express 5, 085102 (2012), [2] M. Levendorf et al., Nature 488, 627 (2012).
[3] C. Casiraghi et al., Nano Lett. 9, 1433 (2009)
Corresponding Author: Yasumitsu Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp- 110 -

2P-29Polarity and magnetism of rippled graphene with topological defect○Mina Maruyama and Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
Surfaces and edges of binary compounds induce polarization at or around theseimperfections caused by the imbalance of the charge neutrality among constituent elements
and the lack of translational symmetry [1,2]. In addition, recently, we demonstrated that themonoelemental materials, such as graphene and fullerenes, inherently exhibit polarization
because of the inhomogeneous charge density of their covalent bonds arising from bondalternation, although they do not possesses edges or surfaces. Fullerenes with asymmetriccages possess dipole moment along particular direction depending on the arrangement of 12
pentagonal rings on the cage [3]. The fact indicates that the topological defect on graphene is
expected to induce polarization around them. In this work, we aim to investigate geometricand electronic properties of rippled graphene with topological defects using the density
functional theory, combined with the effective screening medium method.
Figure 1 shows the structural model of rippled graphene with topological defects which
consist of fused pentagons and heptagons. Under
the equilibrium lateral lattice constant of 0.87 nm,
the sheet is a metal with flat dispersion bands near
the EF leading to the spin polarization with themoment of 1.52 μB/nm2. In addition to the spin
 
  
polarization, the sheet exhibits electric polarization
normal to the sheet with the potential difference of
0.19 V under the equilibrium lattice corresponding
to the dipole moment of 0.84 D/nm2 (Fig.2).
Therefore, the rippled graphene with topologicaldefects possesses both magnetic and electricpolarization. We further investigate the stability ofthe polar properties of the sheet under the biaxial Fig.1: Top and side view of optimized
strain. By increasing the lateral lattice parameters, structure of rippled graphene at a = 8.7 A.

[1] A. Yamanaka and, S. Okada, Carbon 96, 351 (2015).
[2] A. Yamanaka and, S. Okada, in Abstracts of 50th FNTG
symposium, p. 32 (2016).
[3] J. Sorimachi and S. Okada, Chem. Phys. Lett. 659, 1(2016).
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp- 111 -

 

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References










the dipole moment monotonically decreases, while
the magnetic moment is insensitive to the strain
keeping its value irrespective of the strain except thestructure with dangling bonds.





Fig.2:







 

Potential     

difference

of





rippledgraphene as a function coefficient offlexibility.

2P-30
Valley polarization mappingin transition metal dichalcogenides heterostructuresżYusuke Hasegawa1, Shinichiro Mouri1, Kazunari Matsuda1 and Yuhei Miyauchi1
1

Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

Recently, optoelectronic technology relying on valley degree of freedom of electrons, called
valleytronics, has attracted increasing attention for developing low energy consumption andhigh speed optoelectronic devices. One of the possible candidate materials is monolayers oftransition metal dichalcogenides (1L-TMDs) such as MoS2 and WSe2 [1-3]. These 1L-TMDs
are atomic layered materials with hexagonal crystal structures similar to graphene, but
semiconductors with finite direct band-gaps. In addition, broken inversion symmetry andstrong spin-orbit interaction in these materials enable valley-selective excitation (K or K¶ inmomentum space using circularly polarized light [1,2]. Since the first demonstrations on the
optical generation of the valley polarization [1,2], there have been intensive studies on thevalley-polarized states in 1L-TMDs. However, it has still remained unclear how the valley
polarization properties are affected by various local conditions such as interactions with other
1L-TMDs, inhomogeneous carrier density, local strain, andlattice defects.
Here we examine the effects of the interactions between two
WSe2/
different 1L-TMDs artificially stacked with each other(heterostructures) on the valley polarization properties.
MoTe2
Various TMDs heterostructures were prepared andphotoluminescence (PL) spectra and valley polarization
1L-WSe2degrees were measured as a function of spatial coordinates
using a home-built optical system under excitation photon 2menergy of 1.96 eV.
Figure 1 shows the Atomic Force Microscope (AFM) image
and the PL intensity map of 1L-WSe2 and WSe2/MoTe2 at 15
K. The PL intensities of the WSe/MoTe heterostructure arelower than 1L-WSe RQ WKH 6L26L VXEVWUDWH. This result
implies interlayer energy transfer from WSe2 to MoTe2,
because WSe2/MoTe2 is a heterostructure with a straddlinggap (type I). We will show the results for various TMDs
heterostructures and the spatial dependence of the observed
valley polarization under low temperature conditions. The 2mcorrelations between the local conditions indicated by the PL
spectra and the morphologies observed by optical microscope
0
1000
and AFM will be also discussed.
[1] K. F. Mak et al., Nat. Nanotechnol. 7, 494 (2012).
[2] H. Zeng et al., Nat. Nanotechnol. 7, 490 (2012).
[3] S. Mouri, Y. Miyauchi, K. Matsuda, Nano Lett. 13, 5944 (2013).
Corresponding Author: Y. Miyauchi
Tel/Fax: +81-774-38-3465/+81-774-38-4567
E-mail: miyauchi@iae.kyoto-u.ac.jp- 112 -

Fig.1 AFM image (top) and PL
intensity map (bottom) of
1L-WSe2and
WSe2/MoTe2(hetero) at 15 K. PL intensities
were integrated for the photon
energies of 1.74-1.75 eV (exciton
PL). White dotted lines indicate
the edges of these materials.

2P-31
Photoluminescence properties of monolayer MoS2 FETs
fabricated by dry-transfer process○Xiaofan Wang, Yuhei Miyauchi, Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Recently, transition metal dichalcogenides (TMDs) have attracted much attention as novel
two-dimensional semiconductors. These materials are also promising candidate for the future
optical and electronic devices, which opens the new research fields [1,2]. The field effecttransistors (FETs) fabricated by monolayer TMDs have shown significant potential for
enabling new electronic applications [3]. The typical TMD FETs reported to date have been
fabricated using conventional electron-beam or photo-lithography technique followed bymultiple wet processes. The fabricated TMDs FET with wet process using the polymer may
affect the device performance and optical properties [4]. As an alternative method, themultilayer MoS2 FET fabricated by the dry transfer process has been reported [5].

[1] Q. H. Wang et.al., Nat. Nanotechnol. 7, 699 (2012).
[2] S. Mouri et.al., Nano Lett. 14, 5944 (2013).
[3] B. Radisavljevic et.al., Nat. Nanotechnol. 6, 147(2011).
[4] A. G. F. Garcia et.al., Nano Lett. 12, 4449 (2012).
[5] Rui Yang et.al., J. Vac. Sci. Tech. B 32, 061203 (2014).

㻟
㻞
㻝
㻜

㻝㻚㻢

10 μm

㻝㻚㻤 㻞㻚㻜 㻞㻚㻞㻱㼚㼑㼞㼓㼥㻌㻔㼑㼂㻕

(b)

㻜㻚㻠
㻡㻜㻌㼂

㻵㻰㻌㻔䃛㻭㻕

of exciton and charged exciton emission. Figure1(b) shows the source-drain current (IDS) as afunction of source-drain voltage (VDS) withvarying the gate-voltage (VG). The IDS is clearly
modulated by VG, which shows the characteristic
behavior of FET operation. We will discuss thedetail device performance and PL properties ofmonolayer TMDs fabricated by the dry-transfer
process.

㻼㻸㻌㻵㼚㼠㼑㼚㼟㼕㼠㼥In this work, we investigated the device performance and optical properties of monolayer
MoS2 FET fabricated by using dry-transfer process. Figure 1(a) shows the optical image of
MoS2 FET fabricated by dry-transfer process. The monolayer FET was annealed in highvacuum condition to improve the contact between the monolayer MoS2 and the electrode. The
inset shows photoluminescence (PL) spectrum of(a)monolayer MoS2 in this FET device. The PL
spectrum shows the A peak at 1.86 eV, composed

㻜㻚㻞

㻟㻌㼂

㻙㻟㻠㻌㼂
㻙㻡㻜㻌㼂

㻜㻚㻜
㻙㻞㻠㻌㼂

㻙㻜㻚㻞
㻙㻞

㻙㻝

㻜
㼂㻰㻌㻔㼂㻕

㻝㻞

Fig.1 (a) Optical microscope images ofdevice. (b) IDS as a function of VDS ofdevice after 350°C annealing.

Corresponding Author: Kazunari Matsuda
Tel/Fax: +81-774-38-3460
E-mail: matsuda@iae.kyoto-u.ac.jp- 113 -

2P-32Growth and characterization of monolayer Mo1-xRexS2 alloysżShohei Mori1, Shogo Sasaki1, Yu Kobayashi1, Liu Zheng2,3, Shoji Yoshida4, Takahiro
Takeuchi4, Hidemi Shigekawa4, Kazutomo Suenaga3, Yutaka Maniwa1, Yasumitsu Miyata1,51Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
Inorganic Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
3
Nanomaterials Research Institute, AIST, Tsukuba, 305-8565, Japan
4
Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
5
JST, PRESTO, Kawaguchi, 332-0012, Japan
2

Atomic layers of transition metal dichalcogenides (TMDCs) have attracted much attention
because of their unique physical properties and potential applications. To control theirelectronic properties such as bandgap and carrier concentration, many research groups havestudied the growth of TMDC-based alloys so far. In our previous studies, we have also
reported the growth and characterization of Mo1-xWxS2, Nb1-xWxS2, and Mo1-xRexS2
monolayers [1-4]. In this study, we have investigated the structure and electronic properties ofMo1-xRexS2 monolayers by using the combination of electron microscopy and scanningtunneling microcopy/spectroscopy (STM/STS).
Monolayer Mo1-xRexS2 alloys were formed on graphite and quartz substrates by chemical
vapor deposition (CVD) of sulfur, molybdenum oxide, and rhenium oxide. Scanningtransmission electron microscope (STEM) observation reveals that Re atoms were
substitutionally doped into Mo sites (Fig.1a, b). By using STM/STS, we found that the doped
Re sites result in the formation of midgap impurity state as shown in Fig.1c. Such impurity
states have never been observed for the W-doped MoS2 monolayers, and are uniquecharacteristics for Re-doped MoS2. In the presentation, we will report the details ofcomposition-dependent structure and electronic properties.

Fig.1 (a) ADF-STEM image and (b) structure model of monolayer Mo1-xRexS2. (c) Map of color scale dI/dV
curves calculated from the spatially resolved STS spectra of monolayer Mo1-xRexS2.
[1] Y. Kobayashi, et al., Nano Res., 8, 3261 (2015). [2] S. Yoshida, et al. Sci. Rep., 5, 14808 (2015).
[3] S. Sasaki, et al. Appl. Phys. Express, 9, 071201 (2016). [4] S. Mori, et al. The 50th FNTG symposium.
Corresponding Author: Yasumitsu Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp- 114 -

2P-33
Anisotropic optical absorption and Raman spectra in GaTe with theinterference effect of the substratesżYuki Tatsumi1, Shengxi Huang2, Xi Ling2, Huaihong Guo3, Teng Yang4,
Mildred S. Dresselhaus2, Riichiro Saito1
12

Department of Physics, Tohoku University, Sendai 980-8578, Japan
Department of Electrical Engineering and Computer Science, Massachusetts Institute ofTechnology, Cambridge, Massachusetts 02139 USA
3
College of Science, Liaoning Shihua University, Fushun, 113001, China
4
Institute of Metal Research, CAS, Shenyang 110016, China

Gallium telluride (GaTe) is one of the atomic layer materials, which consists of 6 Ga and 6
Te atoms in a unit cell as shown in Fig. 1(a). Bulk GaTe is a semiconductor with a directenergy gap (~1.65eV) [1] and can be a good candidate for opto-electronic device applications
because of high responsibility (104 A/W) and short response time (6 ms) [2]. We have aninterest in the low symmetry properties of GaTe (C2h3 space group in bulk GaTe) and verify
the anisotropy of the optical absorption and Raman spectra by (1) calculation of theelectron-photon matrix element from DFT, (2) analysis of the group theory, and (3)consideration of the interference effect of the substrate in order to reproduce the experiment.
We evaluate the anisotropy of theabsorption probability of GaTe on the 0.5
mm quartz substrate, calculated by transfer
matrix method for the optical absorption
probability [Fig. 1(b)] and the enhancement
factor [3] of GaTe on the SiO2(300nm)/Si
substrate for the Raman intensity [Fig. 1(c)]as a function of thickness. We found that theinterference effect with the substrates plays
an important role in the anisotropy of the
optical absorption and Raman intensity. This
indicates that the thickness of the GaTe
sample and substrate, and the laser energy ofincident light are important parameters togive the anisotropy of the optical properties
in the experiment.
[1] P. Hu, et al. Nano Res., 7, 694 (2014)[2] F. Liu, et al. ACS Nano, 8, 752 (2014)[3] D. Yoon, et al. Phys. Rev. B, 80, 125422 (2009)
Corresponding Author: Yuki Tatsumi
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: tatsumi@flex.phys.tohoku.ac.jp

Fig.1: (a) Crystal structure of GaTe. a1, a2, and a3 are
the primitive lattice vectors. (b) Thickness
dependence of the absorption probability of bulk
GaTe on the 0.5mm quartz substrate for x- andy-polarized light with three laser wavelength (532,633, 785 nm). (c) Thickness dependence of the ratio
between the Raman enhancement factors [3] on the
SiO2(300nm)/Si substrate for x- and y-polarized lightwith three laser wavelength (532, 633, 785 nm).

- 115 -

2P-34
Bandgap modulation of bilayer MoS2 by electric field effectżTetsuki Saito1, Yu Kobayashi1, Kenji Watanabe2, Takashi Taniguchi2,
Yutaka Maniwa1, Yasumitsu Miyata1,3
1Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
National Institute for Materials Science, Tsukuba 305-0044, Japan
3
JST, PRESTO, Kawaguchi, 332-0012, Japan

Bandgap engineering of transition metal dichalcogenide (TMDC) atomic layers is one of
the most important challenges for their potential applications in electronics and optics. In ourprevious works of WS2/MoS2 vertical heterostructures, we reported the bandgap narrowing byinterlayer coupling and the observation of interlayer excitons [1]. In contrast, giant Stark
effect has been predicted theoretically for similar bilayers of TMDCs [2]. Therefore, it isinteresting to investigate the electric field effect of bandgap and optical properties for suchbilayer TMDC systems. In this study, we have measured the electric-filed dependent
photoluminescence (PL) spectra of bilayer MoS2 by using electric double layer capacitors(EDLCs).
Bilayer MoS2 were grown on boron nitride (BN) substrates by chemical vapor deposition(CVD) using MoO2 and sulfurs (Fig. 1a). To study the electric field dependence, Au
electrodes were deposited on the bilayer MoS2, and the MoS2-based EDLCs with ionic liquid
were fabricated (Fig. 1b). Using the EDLC, the PL spectra of bilayer MoS2 were recorded at
different electric field (Fig. 1c). Interestingly, by applying positive gate voltage, we observed
a remarkable redshift for the PL peaks derived from indirect transition. Compared to thepredictions of first principle calculations [2,3], these results can be explained by the bandgap
narrowing due to Stark effect. In the presentation, we will discuss the origin of the peak shift
and electric field effect for bilayer TMDCs.

Fig. 1 Schematic illustrations of (a) bilayer MoS2 on a BN substrate and (b) a bilayer MoS2 EDLC. (c) PL
spectra of bilayer MoS2 at different gate voltages.
[1] T. Saito, et al., The 50th FNTG symposium.
[2] A. Ramasubramaniam, et al., Phys. Rev., 84, 205325 (2011).
[3] Q. Liu, et al., J. Phys. Chem. C, 116, 21556 (2012).
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 116 -

2P-35Growth of Diamond Nanocylinder Forest Using Template-Assisted
Microwave Plasma Chemical Vapor DepositionżWenxi Fei1*, Masafumi Inaba1, Yu Hirano1, Hideki Masuda2, and Hiroshi
Kawarada1,3
1Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan2
Department of Applied Chemistry, Tokyo Metropolitan University, Tokyo 192-0397,
Japan
3
Kagami Memorial Laboratory for Materials Science and Technology, Tokyo
169-0054, Japan
Recently, great effort has been devoted to the modification of the geometricstructures of diamond. Among these structures, cylinder structures are expected to play
crucial role in future nanotechnology. For example, diamond nanocylinder forest(DNF) is a promising candidate for electrode materials for fuel cells due to its highsurface area, high porosity and electrochemical stability. [1]In the case of transistor,
planar boron-doped diamond film is good electrochemical electrode due to the large
voltage window. As a result, it is supposed that boron doped DNF (BDDNF) will also
show high electrochemical performance. [2]Various methods have been tried to fabricate well-aligned DNF, including dry air
plasma etching [3] and radio frequency Ar/O2 plasma etching[4]. The common
disadvantage for the mentioned etching method is that the quality of DNF will bedegenerated by etching. In order to get rid of etching, porous alumina membrane
template-assisted microwave plasma chemical vapor deposition (MPCVD) was used tofabricate DNF and two different structures of diamond cylinders have beensuccessfully obtained by optimizing growth conditions in this work. And influence of
substrate temperature on the growth process of DNF was studied as well.
Table 1 shows the classification of DNF depending on the morphology. The DNF
fabricated with a temperature of 750-900°C were diamond like carbon (DLC) tubes
showed in fig.1, while DLC rods were observed with a temperature of 800-950°C.
When the temperature was raised up to 1000°C, the obtained DNF were confirmed tobe diamond rods. The diamond cylinders with high surface are and porosity fabricatedby us is a promising material for applications in electrode and photovoltaic devices.
Table 1. products obtained at different growth temperature

Temperature (°C)
750
800
900
950
1000

Tube structureƔƔƔRod structureƔƔƔŸ
Fig.1:top-view SEMimage of
DLC tubesobtained at 900 °C‫ ە‬DLC ‫ ڸ‬Diamond[1] Tang, Jing, et al. Nano Today 9.3 (2014): 305-323.
[2] Luo, Daibing, et al. ACS nano 3.8 (2009): 2121-2128.
[3] Baik, et al Thin solid films 377 (2000): 299-302. 5[4] Li, C. Y., et al. Thin solid films 515.9 (2007): 4172-4176.
Corresponding Author: Wenxi Fei
Tel: +81-80-6257-5366
E-mail: feiwenxi@akane.waseda.jp- 117 -

2P-36
In situ synchrotron X-ray diffraction study of structural changes onneutron-irradiated highly oriented pyrolytic graphite under static highpressure and temperature
żT. Hisakuni1, S. Honda1, M. Niibe1, M. Terasawa1, Y. Higo2, K. Niwase3, H. Izumi4,
E. Taguchi5, T. Iwata6
1

2

University of Hyogo, Himeji, Hyogo 671-2280, Japan
Japan Synchrotron Radiation Research Institute, SPring-8, Sayo, Hyogo 679-5198, Japan
3
Hyogo University of Teacher Education, Kato, Hyogo 673-1494, Japan
4
Hyogo Prefectural Institute of Technology, Kobe 654-0037, Japan
5
Osaka University, Ibaraki, Osaka 567-0047, Japan
6
Japan Atomic Energy Research Institute (JAERI), Naka, Ibaraki 319-1195, Japan㻌

Normalized Intensity (a.u.)

Several methods have been developed for synthesizing diamonds such as directconversion of graphite under static high pressure and temperature, shock compression, andchemical vapor deposition. Polycrystalline diamond of 10-20 nm across, which exhibits an
excellent hardness, was synthesized by direct conversion of graphite under static highpressure and temperature [1]. It was also found that neutron-irradiated graphite can betransformed to amorphous diamond by shock compression and rapid quenching [2], wheredefects produced by the irradiation are considered to work as the nucleation sites for diamond.
In this study, in situ structural analysis for neutron-irradiated and unirradiated HOPG
samples under static high pressure and temperature was done, by using a Kawai-type
multianvil apparatus with synchrotron X-ray irradiation at BL04B1 of SPring-8. After
simultaneous high pressure of 16.4 GPa and high temperature of 1400 qC process, thestructural properties of the recovered samples were characterized by optical microscopy,
X-ray diffraction, Raman spectroscopy, and transmission electron microscopy (TEM). In
addition, soft X-ray absorption spectroscopy (XAS) measurements were performed tocharacterize electronic states of the recovered samples at BL09 of NewSUBARU.
Figure 1 shows XAS spectra for the recovered sample of neutron-irradiated
HOPG with㻌
diamond powder as a reference. It wasV*found that the XAS spectra for theneutron-irradiated HOPG exhibited acharacteristic dip around 303 eV ofn-irradiated HOPG
diamond. This result indicates that
sp3-hybridized carbon atoms increased inS*
the neutron-irradiated HOPG after thesimultaneous high pressure and highDiamond powder
temperature process. Detailed structuralchanges for the neutron-irradiated HOPG
will be discussed at the conference.
[1] T. Irifune et al., Nature 421, 599 (2003).
[2] K. Niwase et al., Phys. Rev. Lett. 102, 116803
280
290
300
310
320
(2009).
Photon Energy (eV)Corresponding Author: S. Honda
Fig.1: XAS spectra for the recovered sample ofTel: +81-79-267-4922, Fax: +81-79-267-4922,
neutron-irradiated HOPG with diamond powder as a
E-mail: s-honda@eng.u-hyogo.ac.jp
reference.

- 118 -

2P-37
Upconversion photoluminescense imaging of carbon nanotubes
in mice tissuesżSaki Okudaira1, Yoko Iizumi2, Masako Yudasaka2, Toshiya Okazaki2, Kazunari Matsuda1,
and Yuhei Miyauchi1
12Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki
305-8562, Japan

Single-walled carbon nanotubes (SWNTs) have been considered as promising luminescentprobes for deep-tissue bioimaging because of their intrinsic photoluminescence (PL) in thenear infrared wavelength range of ~1000-1300 nm called NIR-II [1, 2]. The near infrared lightreadily penetrates into highly scattering media such as biological tissues; this enables PL
imaging of deep inside of them. However, it is necessary to use Stokes PL at longer
wavelengths than ~1100 nm to avoid autofluorescence from the biological tissues, andstandard Si-based detectors cannot be used in this wavelength range. Recently, efficient
upconversion PL (UCPL) of SWNTs has been discovered [3]. The UCPL phenomena enable
SWNTs excited at wavelengths longer than ~1050-1200 nm to emit PL shorter than 1000 nm
in which standard Si-based detectors have finite sensitivity. The availability of the UCPL thus
drastically enhances the usefulness of SWNTs as luminescent probes in their bioimaging
applications.
Here we demonstrate the first UCPL imaging of SWNTs in biological tissues of micewith negligible autofluorescence using a Si-based CCD camera. We observed microscopic PL
and UCPL images of sectioned liver tissues of mice into which SWNTs were intravenously
injected. Figures 1(a)-(c) show an optical transmission image, a Stokes PL image (excited at
658 nm), and a UCPL image (excited at 1064 nm), respectively. Figs. 1(b) and (c) were
captured using the same CCD camera. In the case of Stokes PL imaging in Fig. 1(b), PL ofboth SWNTs (bright spots) and the tissue itself (autofluorescence, bright back ground) wereobserved. In contrast, only the UCPL of SWNTs (bright spots) was clearly observed in Fig.
1(c); this indicates nearly perfect reduction of the autofluorescence in the UCPL imaging.
Results for stained samples will also be discussed.

Fig. 1(a) Optical transmission image, (b) Stokes PL image excited at 658 nm, and (c) UCPL image excited at1064 nm of the sectioned tissue of a mouse liver with the infused SWNTs. In (b) and (c), PL in 950-1000
nm was selectively detected. All images were taken at the same position of the sample.
[1] K. Welsher et al., Nat. Nanotechnol. 4, 773 (2009), G. Hong et al., Nat. Photon. 8, 723 (2014)[2] Y. Iizumi, et al., ACS Appl. Mater. Interfaces 5, 7665 (2013)[3] N. Akizuki et al., Nat. Commun. 6, 8920 (2015)
Corresponding Author: Y. Miyauchi
Tel: 81-774-38-3463, Fax: +81-774-38-4567, E-mail: miyauchi@iae.kyoto-u.ac.jp- 119 -

2P-38
Thermal interface materials of vertically aligned carbon fibers
embedded densely in polymer matrix
1○Ryo Yamada1, Hisashi Sugime2, Toshio Osawa1, and Suguru Noda1

Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan
Waseda Institute for Advanced Study, Waseda University, Tokyo 169-8050, Japan2

The energy consumption of electric devices has been increasing rapidly, and efficient cooling of the devices becomes an important issue. In many devices, thermal interface materials (TIMs) are used to dissipate the heat from substrates to heatsinks, andimproving the performance of TIMs is highly required. Because the materials for TIMs
should have both good thermal conductivity and softness, carbon fibers (CFs), which
individually have axial conductivity as high as 900 W/m K [1], are expected to be thecandidate materials for novel TIMs. As the CFs do not form a self-supporting film withoutbinder (e.g. polymer), the method to make a CF/polymer composite is an important issue. Especially, aligning the CFs vertically in the composite film is important for TIMs. For example,

TIM with aligned CFs were achieved using electrical field [2]; however, CF content
was up to 13.2 wt%.
In this study, TIMs with vertically aligned CFs densely embedded in polymethylmethacrylate (PMMA) matrix are fabricated by a simple process. First, CF/PMMA ink
was prepared with toluene as solvent and rod coated on a substrate to make a film.
During the rod coating, CFs aligned well to the moving direction of the rod because of
the rod-shearing stress (Fig.1). Fabricated CF/PMMA film is then rolled up with theaxis parallelly to the CFs alignment and heat pressed to form a rod. The rod is cut to~100 μm which is proper thickness for the TIMs (Fig.2). We achieved the verticallyaligned CFs in the polymer matrix with the CF contents as high as 60 wt%. When the
thickness of TIMs become thinner than CFs length, some of individual CFs penetrated
the TIMs. Such CFs will greatly enhance the overall thermal conductivity due to theabsence of junction resistance between the CFs in vertical direction. The highest conductivity of 35.4 W/m K was achieved so far with 50 wt% CF/PMMA TIM.
wt% moving
CF/PMMAfilm (b)direction(a) 50 Rod
Rod moving direction

(a)

(b)

500500μm
μm

10 μm

100 μm30

29

Fig.1 CF/PMMA film(a) SEM images (b) Alignment histogram

Fig.2 CF/PMMA TIM (60 wt%)(a) Top view (b) Cross section[1] Nihon graphite fiber, http://www.ngfworld.com[2] K. Uetani et al, Adv. Mater. 2014, 26, 5857.

Corresponding Author: S. Noda, Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp
Acknowledgement: This work was supported by JX Nippon Oil & Energy- 120 -

2P-39Ultrathin graphene-based solar cells
Ya-Ping Hsieh1, Chin-Fu Chen1, Mario Hofmann2
1

Graduate Institute of Opto-Mechatronics, National Chung Cheng University and Advanced
Institute of Manufacturing with High-Tech Innovations, Chiayi , 62102, Taiwan
2
Department of Material Science and Engineering, National Cheng Kung University, Tainan,
70101, Taiwan
Decreasing the device thickness ofmultilayered heterojunction devices toatomic scales has many advantages. For
example ultrathin solar cells [1] exhibit hightransmittance, high mechanical flexibility,
high conversion efficiency and low cost. The
major issue that limits the thinning is anincrease in leakage current due to theformation of pinholes.
We here demonstrate the use ofgraphene to lower the leakage current forenhanced device performance. We find thatgraphene electrodes can be safely suspended
over voids that would cause leakage currents
with traditionally deposited electrodes and adecrease in leakage current by 6 orders ofmagnitude was observed.
This ability enabled the fabrication ofsolid-state dye-sensitized solar cells with
TiO2 thicknesses between 5 nm and 100 nm,
which represents some of the thinnest solar
cells produced to date.
At those new length scales, unusual
device characteristics were observed, suchas two-dimensional dye loading anddecreased interfacial charge compensation
which highlight the limits of scaling
ultrathin solar cells.

Fig.1(a) AFM image of graphene on 10 nm
TiO2/Z907, (b) height histogram before and after
deposition of graphene on 10 nm TiO2/Z907,(inset) depiction of origin of different roughness,(c) comparison of leakage currents for grapheneon 10 nm and 100 nm TiO2 and Pt on

Reference[1] Hsieh, Ya-Ping, Bang-Jian Hong, Chu-Chi Ting,
and Mario Hofmann. RSC Advances 5, no. 121,
99627-99631 (2015).

- 121 -

3P-1
Preparation of methanofullerene derivatives: [70]PCBM and bis-[70]PCBM
with high regioselectivity
ż7DNDWRVKL,WR1, Yuta Inoue2, Tetsuo Iwasawa2, Fukashi Matsumoto1, Toshiyuki Iwai1,
Kazuyuki Moriwaki1, Yuko Takao1, Takumi Mizuno1, Toshinobu Ohno1
1

Osaka Municipal Technical Research Institute, 1-6-50, Morinomiya, Joto-ku, Osaka
536-8553, Japan
2
Fuculty of Scienece and Technology, Ryukoku University, Otsu, Shiga 520-2194, Japan
Bulk heterojunction (BHJ) organic solar cells consisting of p-type conjugated polymers
and n-type fullerene derivatives are considered to be attractive candidates for a low-costsustainable energy source, and have become one of the most growing areas over the past
decade. One of the most widely used electron acceptors in BHJ organic photovoltaic devices(OPVs) is fullerene derivatives, particularly [6,6]-phenyl-C61/C71-butyric acid methyl ester([60]PCBM or [70]PCBM) [1].
The mono substitution toward C60 fullerene gives single isomer, whereas mono addition of
C70 affords an isomeric product mixture in many cases due to the less symmetrical C70 cage.
We recently reported facile synthesis of PCBMs by reaction of semi-stabilized sulfur ylides
with C60 and C70, in which the desired [6,6]-isomer ([60]PCBM) was directly obtained
without the generation of the corresponding [5,6]-open fulleroid [2]. Herein we wish to report
extension of our study to regioselective synthesis of [70]PCBM (scheme 1).

Scheme 1. Synthetic protocols for [70]PCBMIntroducing two isopropyl groups with sulfur atom reached almost maximum values toafford D-type PC71BM in high regioselectivity. Additionally, the use of excess sulfonium salt
afforded bis-adducts (bis[70]PCBMs), in 57% yield, with a fairly high component ratio (ca.
97 : 3) compared to the conventional method.
[1] Hummelen, J. C.; Knight, B.W.; LePeq, F.; Wudl, F.; Yao, J.; Wilkins, C. L. J. Org. Chem. 1995, 60, 532.
[2] Ito, T.; Iwai, T.; Matsumoto, F.; Hida, K.; Moriwaki, K.; Takao, Y.; Mizuno, T.; Ohno, T. Synlett. 2013, 24, 1988.
Corresponding Author: Takatoshi Ito
Tel: +81-6-6963-8053, Fax: +81-6-6963-8049,
E-mail: ito@omtri.or.jp- 122 -

3P-2
Structure Determination of Saturn-Like Oligothiophene Macrocycle with
C61H2 and C70○Hiroshi Okada,1 Hideyuki Shimizu,2 Shinobu Aoyagi,3 Biao Zhou,4Masahiko Iyoda,2 Yutaka Matsuo1,51

Department of Chemistry, School of Science, The University of Tokyo,
Tokyo, 113-0033, Japan2
Department of Chemistry, Graduate School of Science and Engineering,Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan.
3
Department of Information and Biological Sciences, Nagoya City University,
Nagoya 467-8501, Japan
4
Department of Chemistry, College of Humanities and Sciences, Nihon University,
Sakurajosui 3-25-40, Setagaya-Ku, Tokyo 156-8550, Japan
5
University of Science and Technology of China, Anhui 230026, China
X-ray single crystallographic analysis for fullerenes such as fullerene derivatives, exotic
metallofullerenes, and higher fullerenes is still one of powerful characterization tool to obtain
precise structural information and structural properties. When we encounter difficulty ofobtaining single crystals, we usually consider the use of supramolecular host molecules suchas cobalt octaethylporphyrin to make co-crystals through non-covalent interaction forstructural characterization.[1-3] These host molecules have been contributed to crystal
structure determination of fullerenes that have been undetermined with ordinary
crystallization methods. Furthermore, development of new good host molecules broadens
opportunity for highly attractive structural, optical, and electronic properties of fullerenecomplexes.
Oligothiophene macrocycle is a promising candidate for supramolecular hosts forabove-mentioned purpose. A Saturn-like complex of this macrocycle with C60 have beenreported.[4] In this work, we chose dihydromethanofullerene, C61H2, as a guest fullerene
derivatives that had not been crystallographically characterized even through C61H2 has a very
simple structure.[5] Also we demonstrated complexation with C70 for detail examination of
supramolecular formation.

References[1] K. Kurotobi and Y. Murata, Science. 2011, 333, 613–616[2] S. Stevenson et al., Nature 401, 1999, 55–57[3] H. Ueno et al., Chem. Sci., 2016, Advance Article, DOI: 10.1039/C6SC01209D[4] H. Shimizu et al., J. Chem. Am. Soc. 2015, 137, 38773885[5] Y. Zhang et al., J. Chem. Am. Soc. 2011, 133, 8086–8089.
Corresponding Author: H. Okada and Y. Matsuo
Tel: +81-3-5841-0978, E-mail: hokada@photon.t.u-tokyo.ac.jp; matsuo@photon.t.u-tokyo.ac.jp- 123 -

3P-3
Preparation of [C60]Fullerene Nanowhisker-Silver Nanoparticle Composites
and Their Catalytic Activity for Oxidation of Tetramethylbenzidine with
Hydrogen PeroxideżJeong Won Ko1, Weon Bae Ko 1,2
1

Department of Convergence Science, Graduate School, SahmyookGUniversity,
Seoul 139-742, Korea
2
Department of Chemistry, Sahmyook University, Seoul 139-742, Korea

Silver nanoparticles solution was prepared by dissolving trisodium citrate dihydrate(C6H5Na3O

෹2H2O),

sodiumborohydride(NaBH4),

cetyltrimethyl

ammoniumbromide(CTAB,(C16H33)N(CH3)3Br), ascorbic acid(C6H8O6) and silver nitrate (AgNO3) in distilled water, andthen the resulting solution was irradiated ultrasonication for 3 h. [C60]Fullerene nanowhisker-silver
nanoparticle composites were prepared using C60-saturated toluene, silver nanoparticles solution andisopropyl alcohol by liquid-liquid interfacial precipitation method. The formation of [C60]fullerene
nanowhisker-silver nanoparticle composites was confirmed by X-ray diffraction, Raman spectroscopy,
scanning electron microscopy, and transmission electron microscopy. The catalytic activity of[C60]fullerene nanowhisker-silver nanoparticle composites for oxidation of tetramethylbenzidine(TMB) with H2O2 was confirmed by UV-vis spectroscopy.

NP %% 













6KOG OKP 

Fig.1: Kinetics Study of Tetramethylbenzidine Oxidation with Hydrogen Peroxideusing [C60]Fullerene Nanowhisker-Silver Nanoparticle Composites.
[1] K. Miyazawa and K. Hotta, J. Cryst. Growth, 312, 2764 (2010).
[2] J.W.Ko, J. Li and W.B. Ko, Nanomater. Nanotechno., 5:37. doi: 10.5772/62086 (2015).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax: +82-2-979-5318,
E-mail: kowb@syu.ac.kr- 124 -

3P-4
Color tuning of semitransparent organic solar cells usingoxide/metal/oxide transparent anodeżShunjiro Fujii1 and Hiromichi Kataura1
1

Nanomaterials Research Institute, National Institute of Advanced Industrial Scienceand Technology (AIST), Ibaraki 305-8565, Japan
Semitransparent organic solar cells (OSCs) have attracted a great attention for theirpotential applications such as power-generating windows for building-integrated
photovoltaics and sun shading for automobiles. The former are especially interesting due
to their multiple functions of light harvesting, lighting and indoor temperature control.
However, the transmission spectra of semitransparent OSCs have been so far dominatedby the materials used as the active layers. For the common bulk-heterojunction OSCs
using poly(3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester (P3HT:PCBM),
a red-purple color is observed because of a high absorbance at approximately 500 nm
and the cut-off absorbance spectrum of P3HT:PCBM at 650 nm. Previously, we reported

Transmittance (%)

Figure 1 Schematic illustration ofsemitransparent solar cell.

20
15
10

-----͐͐

5

MoO3

Thin metal

MoO3

PTB7:PC71BMPFN

ITO/Glasssemitransparent OSCs based on a low-bandgap polymer of PTB7 and PC71BM utilizing a
MoO3/Au/MoO3 anode [1]. In this work we demonstrated the fabrication of color-tunable
semitransparent PTB7:PC71BM solar cells by adopting different metal layers inoxide/metal/oxide trilayer anode.
The device structure was Glass/ITO/PFN/PTB7:PC71BM/MoO3/thin metal/MoO3(Figure 1). For the thin metal layers sandwiched by the two transparent MoO3 layers,Ag(20 nm), Au(20 nm) or Al(2 nm)/Cu(18 nm) were used, which acted as an opticalspacer as well as electrode. Figure 2 shows the corresponding optical transmittancespectra for the semitransparent cells. By combining flat transmittance of PTB7:PC71BM
film with MoO3(10 nm)/metals(Ag, Au or Al/Cu)/MoO3 (20 nm) anodes, the colors of
the semitransparent cells were broadly tuned 50
to blue, green and gray, while maintaining a 45
40
similar cell performance. The detailed
35
device characteristics will be discussed.
30
This work was supported by KAKENHI
25
Nos. 16K17497, 25220602.

0300

MoO3/Ag/MoO3
MoO3/Au/MoO3
MoO3/Al/Cu/MoO3

Wavelength400
500 (nm)

600

700

Figure 2 Optical transmittance spectra ofsemitransparent cells including ITO/glass substrate.
[1] S. Fujii et al., The 48th FNTG General symposium 2014, 1p-35
Corresponding Author: Hiromichi Kataura E-mail: h-kataura@aist.go.jp- 125 -

3P-5
Isolation of a missing fullerenes Gd@C2n derivatives○Ayano Nakagawa1, Shinobu Aoyagi2, Haruka Omachi1 , Zhiyong Wang1,
Katsuma Ishino1, Ryo Kitaura1, and Hisanori Shinohara1
1

Department of Chemistry and Institute of Advanced Resaerch, Nagoya University, Nagoya
464-8602, Japan.
2
Department of Information & Biological Science, Nagoya City University, Nagoya
467-8501, Japan.

  The extraction of endohedral metallofullerenes M@C2n (e.g., M = Y, La, or Gd etc., 2n =60, 70, 72, or 74) has been a long-standing challenge in fullerene ever since the experimental
discovery in 1985[1]. The high reactivity of these fullerenes has led to form their polymer,
hindering the solvation in common organic solvents and the subsequent isolation process.
Thus, no study has ever done on the elucidation of property and structure of these so calledmissing fullerenes.
Recently, our group has reported a new stabilization method of missing fullerenes by insitu functionalization of trifluoromethyl (CF3) groups which enables their isolation[2]. Here,
we demonstrated the separation of individual derivatives of Gd@C2n missing fullerenes bychromatographic separation as shown in Fig. 1(a). MALDI- TOF mass spectra of an isolated
derivative, as shown in Fig. 1(b), exhibits an intense peak of Gd@C74(CF3), indicating thatmono-functionalization with CF3 group has stabilized Gd@C74 that allow its isolation. This
isolation method of missing fullerenes will allow us to study their structure and property,
significantly advancing the research of fullerenes.
(b)

(a)

Fig.1 (a) First-stage HPLC chromatography of Gd@C2n derivatives. (b) MALDI-TOF mass spectra of isolated
Gd@C74(CF3)[1] J. R. Heath et al., J. Am. Chem. Soc., 107, 7779 (1985).
[2] (a) Z. Wang et al., Angew. Chem., Int. Ed., 52, 11770 (2013). (b) Z. Wang et al., Angew. Chem., Int. Ed.,55,199 (2016).
Corresponding Author: Hisanori Shinohara
Tel: +81-52-789-2482, Fax: +81-52-747-6442, E-mail: noris@nagoya-u.jp- 126 -

3P-6In-situ TEM study on structure and optical emission during Joule heatingof a multiwall carbon nanotube○Koushi Nishikawa, Koji Asaka, Hitoshi Nakahara, Yahachi Saito
Department of Quantum Engineering, Nagoya University, Furo-cho, Nagoya 464-8603

Intensity (a.u.)aIn previous study, some broad peaks in addition to theblackbody radiation spectrum during Joule heating of aAu
multiwall carbon nanotube (MWNT) were observed in ascanning electron microscope [1]. However, the origin of
the peaks has not been clarified yet. In this study, inorder to make it clear, the structure of the MWNT during
Joule heating of the MWNT was observed withsimultaneous measurement of the optical emission.
MWNTs attached to an edge of a gold (Au) plate by
MWNT
dielectrophoresis were mounted on a specimen holder
for in-situ transmission electron microscopy (TEM). Anbedge of a MWNT protruding from the Au plate wasbrought into contact with an Au-coated tungsten needle
in TEM. The structure changes induced by Joule heatingof the MWNT were observed by in-situ TEM. The bias
voltage and current were measured simultaneously withthe optical emission spectra.
Figures 1(a) and 1(b) show TEM images observed before
10 nm
and after the MWNT was fractured near the Au electrodeby Joule heating, respectively. After the fracture, theFig.1 TEM images of a MWNT (a)diameter of the capped MWNT tip decreases, as shown before and (b) after the fracture of thein Fig. 1(b). The optical emission spectra before and MWNT near the Au electrode.
after the fracture by the Joule heating are shown in Fig.
(b) After fracture2(a) and 2(b). The intensity of the spectra continuously
rises with the increase of the wavelength, indicating thatthe spectra include blackbody radiation components.
Some peaks besides the blackbody radiation spectra areobserved. After the fracture of the MWNT, the intensityof the peaks significantly increases. The peak energies
are 1.40, 1.52, 1.70, 1.83 and 2.10 eV. The energies 1.40(a) Before fractureand 1.52 eV are close to energy differences between van
4 00
8 00
6 00
Hove singularities in a semiconducting carbon nanotube
W avele n gth (nm )(CNT) with diameter 6.38 nm. The other peak energies Fig. 2 Optical emission spectra duringcorrespond to CNTs with diameter 7.20, 4.73, and 5.55 Joule heating of the MWNT at aof ~390 μW. (a) before and (b)nm, respectively. The peaks observed in optical emission power
after fracture.
spectra during Joule heating of the MWNT areconsidered to be attributed to the interband electrontransitions in the MWNT.
[1] X. Cai et al. Thin Solid Films 464-465 (2004) 364-367.
Corresponding Author: Koushi Nishikawa
Tel: +81-52-789-3714, Fax: +81-52-789-3703, E-mail: nishikawa@surf.nuqe.nagoya-u.ac.jp- 127 -

3P-7
Novel Dispersion and Evaluation Method for CNTs by Using
Ultrasonic Mixer, PR-1
żTakayuki Takatsuka
THINKY Corporation, Tokyo 101-0021, Japan
Carbon nanotubes (CNTs) are strongly aggregated by van der Waals’ force, andultrasonic has been utilized to deagglomerate CNTs. Nano Premixer, PR-1 (Thinky,
Tokyo) rotates CNTs in an enclosed vessel inside the ultrasonic bath and irradiates
ultrasonic simultaneously from two directions, side and bottom, to disperse CNTs.
With the combination of the rotation and the dual ultrasonic process, highly
reproducible and stabilized CNT-dispersion can be obtained.
The evaluation result for CNT-dispersion is conventionally obtained by indirect
approaches by using SEM and/or Four-terminal method; however, since the evaluation
is based on powdered CNTs, the result does not reflect the actual dispersibility andstability of CNT-dispersion.
At this report, we will introduce the method to disperse several different CNTs with
PR-1, and evaluate the dispersion using CPS Disc Centrifuge High Resolution Particle
Size Analysis System.

Corresponding Author: Takayuki Takatsuka (THINKY)
Tel: +81-3-5207-2717, Fax: +81-3-5289-3285
E-mail: takatsuka@thinky.co.jp- 128 -

3P-8
Pyrene dimer and monomer on single-walled carbon nanotubes○Jinseok Baek1, Tomokazu Umeyama1, Yuta Sato2, Kazu Suenaga2, Hiroshi Imahori1,3
1

2

Department of Molecular Engineering, Kyoto University, Kyoto 615-8510, Japan
National Institute of Advanced Industrial Science and Technology (AIST), AIST Central 5,
Tsukuba 305-8565, Japan
3
Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Kyoto
615-8510, JapanThe close solid-state structure–property relationships of organic π-aromatic molecules
have attracted interest due to their implications for the design of organic functional materials.
In this regard, a dimeric structure is considered as a minimum unit for evaluatingintermolecular interactions precisely. In this study, selective formation of the dimeric andmonomeric π-aromatic units on an sp2 carbon network of single-walled carbon nanotubes(SWNTs) was achieved using one- and two-step methods, i.e., direct addition of thepyrenylphenyl (PP) radical onto the SWNT sidewall (Py-1-SWNT) and stepwise addition
consisting of first addition of the iodinephenyl (PP) radical onto the SWNT sidewall, followedby the second Suzuki coupling between the PhI-functionalized SWNT and pyrene boronic
ester (Py-2-SWNT) (Fig. 1) [1]. Py-2-SWNT presented monomeric pyrenes located on the
SWNT sidewall, whereas dimeric pyrenes were formed on the SWNT sidewalls of
Py-1-SWNT, as demonstrated both theoretically and experimentally. In particular, we
successfully visualized for the first time the linking of dimeric molecules onto the outside ofnanocarbon scaffolds at a single molecule level using the high-resolution transmission
electron microscopy (HR-TEM) technique. Reflecting the unique orientation and separation
distances between the two pyrene moieties, Py-1-SWNT exhibited an additional distinct bandin the absorption spectrum and a photoinduced charge separation in the transient absorption(TA) spectrum, which is in marked contrast with Py-2-SWNT. The present methodology used
to form and probe
molecular dimers on
SWNT is applicable toaany organic molecules
N BF
that contain aryl groups,
including π-conjugatedp-SWNT
Py-1-SWNT
small molecules andX
X X X
oligomers. Thus, this b
X
N BF
method can be used to(X = I)
B(OH)
Pd(PPh )providebasic
Cs CO
information regarding
p-SWNTPy-2-SWNTPhI-SWNT
X X
the close structure–property
relationships Fig. 1 Schematic representation of the functionalization of SWNTs withexisting within dimeric pyrene. (a) One-step functionalization. (b) Two-step functionalization.
molecules of interest.
2

2

+

4

+

4

–

–

2

3 4

2

3

[1] T. Umeyama, J. Baek, Y. Sato, K. Suenaga, F. Abou-Chahine, N. V. Tkachenko, H. Lemmetyinen and H.
Imahori, Nat. Commun. 6, 7732 (2015)
Corresponding Author: J. Baek
Tel: +81-75-383-2567, Fax: +81-75-383-2571,
E-mail: baek.jinseok.87e@st.kyoto-u.ac.jp- 129 -

3P-9
Electronic structure of CNT thin films with nanoscale interfaces
under an electronic fieldʊTaketo Kochi and Susumu Okada

University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8571 Japan
Carbon nanotubes (CNTs) are attracting much attention owing to their unique geometricand electronic properties. Because of the unusual physical properties, they are keeping apremier position in emerging materials for the future electronic devices. Indeed, it has
been demonstrated that CNTs work as conducting channel of field effect transistors (FETs). In
the FET, CNTs form a mat film structure in which CNTs intersect each other with nanometerscale interfaces. Although the CNT mat films can work as conducting channel in real

devices, the microscopic mechanism of carrier accumulation in the CNT thin films
under an external electric field is still unclear. Thus, in this manuscript, we aim toelucidate the fundamental electronic properties of CNT thin films with nanoscaleinterfaces among CNTs under an external electric field, which injects electrons/holes
into the CNTs, using density functional theory with local density approximation. In thiswork, to simulate the CNT-FET device structure, we consider the CNT double-decker
structure consisting of (10,0) and (11,0) CNTs which are intersect each other with
angles of 60, 75, and, 90 degrees (Fig. 1). For both electron and hole doping, theaccumulated carriers are mainly distributed on the CNT situated at the electrode side. In
addition, under the particular conditions, the distribution of accumulated carriers shows
the unusual feature, inducing the inversion electric field to the applied external electricfield. We further investigate the capacitance of the CNTs.

Fig. 1 (a) A structural model of CNT thin films in the FET structure under theelectron field. (b) The top views of CNT thin films.

- 130 -

3P-10
Voltage generation by movement of electrolyte solution on carbon nanotube
thin film○Tomohiro Yasunishi1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

2

Graduate school of Engineering, Nagoya University, Nagoya 464-8603, Japan.
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603,
Japan.

Energy harvesting from environment energy sources is emerging technology for driving
sensor devices for IoT. Recently, the voltage generation of a few millivolts from the
movement of electrolyte solution have been demonstrated by using graphene [1, 2] andcarbon nanotubes (CNTs) [3]. In this work, we fabricated the voltage generators using thesingle-walled CNT thin film on flexible substrate. Their characteristics such as thedependences on concentration of electrolyte solution and thickness of CNT thin film havebeen studied.
Highly-conductive CNT thin films were formed on polyethylenenaphthalate (PEN)
substrate by the dry transfer process based on the floating-catalyst chemical vapor deposition.
[4]. The size of the CNT thin film was 30 mm x 4 mm (Fig. 1 (a)). Ag-paste electrodes wereformed on the both edges. 2-mol/l NaCl aqueous solution was used as the electrolyte. The
droplet of the electrolyte solution was moved on the CNT thin film between two electrodes(Fig. 1 (b)). We measured open-circuit
voltage by semiconductor device parameter
analyzer.
Figure 2(a) and 2(b) show the voltage
wave forms generated by moving
electrolyte droplet for CNT film thicknessof 40 and 10 nm, respectively. The CNT
film thickness was measured by laser
scanning confocal microscope. The Fig. 1 (a) Photograph of fabricated device, (b) schematic
maximum open circuit voltage was 220 PV of measurement system.
for the CNT film thickness of 40 nm (Fig. 2(a)). Thinner CNT film of 10 nm generated
higher voltage as 2.72 mV. This is probably
due to the elimination of shunt current
flowing through the underlayer CNTs.
[1] P. Dhiman et. al., Nano Lett. 11, 3123, (2011).
[2] J. Yin et. al., Nat. Nanotechnol. 9, 378, (2014).
[3] S. Ghosh et. al., Science 299, 1042 (2003).
[4] A. Kaskela et. al., Nano Lett. 10, 4349 (2010).
Corresponding Author: Y. Ohno
Tel&Fax: +81-52-789-5387,
E-mail: yohno@nagoya-u.jp

Fig. 2 Voltage wave forms generated by moving
electrolyte droplet on CNT film. The thicknesses of CNT
films are (a) 40 nm and (b) 10 nm, respectively.

- 131 -

3P-11
Controlled n-type doping of carbon nanotube thin-film transistors
with salt and crown ether○Fumiyuki Nihey1,*, Kei Endo1,2, Jiang Pu1,3, Noriyuki Tonouchi1, Fusako Sasaki4,
Yuki Kuwahara4,5, Takeshi Saito4,5, Hiroyuki Endoh1
1

IoT Devices Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
2
Graduate School of Engineering, Osaka University, Suita 565-0871, Japan3
Department of Applied Physics, Waseda University, Shinjuku 169-8555, Japan
4
Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba 305-8565
5
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565
Carbon nanotubes (CNTs) have attracted much attention for various applications such as
flexible, printable thin-film transistors (TFTs). CNT-TFTs generally show p-type behavior
possibly due to unintentional hole doping by oxygen and/or water, so stable n-type doping has
been anticipated especially for logic-circuit applications. Although organic molecules such aspoly(ethylene imine) (PEI) and venzyl viologen have been reported as air-stable dopants, theirstability is still controversial. Recently, Nonoguchi et al. proposed new n-type doping agentscomprising salts and crown ether families that display prolonged air stability of negative
Seebeck coefficients even under elevated temperatures [1]. Here, we have succeeded incontrolling the electrical properties of CNT-TFTs with the salt and crown ether dopants. Bychanging the concentration of the dopant in solvent, CNT-TFTs changed from p-type toambipolar, and eventually n-type characteristics.
Solution of 18-crown (0.1 mol/L) and KOH (saturated conc.) in N-methylpyrrolidone(NMP) was prepared. The solvent was diluted by NMP as needed. CNTs synthesized by using
the enhanced direct-injection pyrolytic synthesis method [2] were used and enriched to
semiconductive ones by using an electric-field- induced layer formation (ELF) method [3].
CNT-TFTs were fabricated on Si/SiO2 substrates. The ID-VGS characteristics of the devices
showed sccessive changes from p-type to n-type, depending logarithmically on theconcentration of dopants.
Acknowledgment: This presentation is based on results obtained from a project subsidized
by the New Energy and Industrial Technology Development Organization (NEDO).
References: [1] Y. Nonoguchi et al., Adv. Funct. Mater. 26, 3021 (2016). [2] T. Saito et al., J.
Nanosci. Nanotechnol. 8, 6153 (2008). [3] K. Ihara et al., J. Phys. Chem. C 115, 22827(2011).
*Corresponding Author: Tel: +81-29-856-1168, E-mail: nihey@cd.jp.nec.com- 132 -

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3P-13
Response to pH of carbon nanotube thin-film transistors
for sensor applications○Kana Hasegawa1, Nguyen Xuan Viet1, Takuya Ushiyama1,
Shigeru Kishimoto1, Yutaka Ohno1,2
1

Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan2[1] I. Heller et al. Nano Lett. 8, 591 (2008).
[2] N.X. Viet et al. The 49th FNTG General Symp.
2P-7 (2015)[3] T Haeberle et al. Appl. Phys. Lett. 101, 223101(2012).
Corresponding Author: Y. Ohno
Tel: +81-52-789-5387, Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp-ID (PA)-ID (PA)

Carbon nanotube field-effect transistors (CNT FETs) are promising platform as highlysensitive electronic biosensors because of its excellent electrical property [1]. On the other hand,
they lack in controlling the uniformity and mass production, causing large variation incharacteristics. In our previous work, thin-film transistors (TFTs) based on a random CNT thinfilm are advantageous, compared to FETs based on individual CNTs from the viewpoint of
uniformity and reproducibility [2]. In this study, we investigate sensor behavior of CNT TFTs
to understand their operation in biological environments, which are typically electrolytic
solutions.
CNT TFTs were fabricated in an electrolyte-gated transistor architecture, where singlewalled CNT thin film connected two metal electrodes, source and drain (Fig. 1 (a)), and directly
contacted with electrolytic solution. A liquid gate potential was applied to an Ag/AgCl (3-M
NaCl) reference electrode respect to the grounded source electrode. The TFT was placed in a
fluidic channel to avoid evaporation of test solution and make it easy to change solutions asshown in Fig. 1(b).
(b)(a)
First, we examined the response to pH
without varying the ion species and ion
Inlet
OutletRE
Silicone
CNT
strength. Figure 2 shows the time-domain
response measured at VDS = -0.05 V and VGS= -0.1 V when pH was varied between 6 and
CNT
S
D
S
D
Substrate
8. Here, the electrolytic solution was 1-mM
50 μm
Acryl
PBS and 10-mM NaCl solutions. The ID
exhibited linear dependence on pH as Fig. 1 (a) Fabricated CNT TFT, (b) schematic ofshown in the inset of Fig. 2. The response measurement system.
can be explained by ionization and
28.5
VDS = -0.05 V
8deionization of functional groups on the
28.5
VGS = -0.1 V
28.0
CNT surface, depending on proton
7.5
7.5
L
=
100
Pm
concentration [3].
27.5
7
7
28.0

27.0

6

7

6.5

6.5

8

pH

27.5
pH 6
27.0

0

6

1000

2000

3000

4000

Time (s)Fig. 2 Response to pH in 1-mM PBS and 10-mM NaClsolution. (inset) Drain current vs pH.

- 134 -

3P-14n-Type Thermoelectric Properties of Single-walled Carbon Nanotubes
encapsulating 1,1'-Bis(diphenylphosphino)ferrocene
1○Yu Iihara1, Yoshiyuki Nonoguchi1 and Tsuyoshi Kawai1
Graduate School of Materials Science, Nara Institute of Science and Technology
8916-5 Takayama, Ikoma, Nara, 630-0192, Japann-Type single-walled carbon nanotubes (SWNTs) have been investigated for thedevelopment of flexible p-n junction devices including solar cells [1] and FETs [2]. n-TypeSWNTs have been regarded as unstable under ambient condition, which has motivated us to
improve air-stability by means of molecular doping. We have recently demonstrated that
adsorption of phosphine derivatives alters the sign of majority carriers of SWNTs from p-type
to n-type [3]. However, phosphine-SWNT composites showed limited stability in air.
In this work, we report on the n-type doping and the stabilization of n-type SWNTs using
the encapsulation of phosphine derivatives in SWNTs. The internal space of nanotubes is
expected to suppress the oxidation. We chose 1,1’-Bis(diphenylphosphino)ferrocene (dppf) as
a dopant since it shows a stable redox behavior. We prepared SWNTs encapsulating dppf
(dppf@SWNTs) by heating dppf/SWNTs composite films at 200 °C in vacuo.
TEM observation reaveled that dppf was encapsulated into SWNTs (Fig 1). The
conductivity of the dppf@SWNTs significantly enhanced compare to raw SWNTs,
presumably due to the electron transfer from dppf to SWNTs. This composite showedcomparatively high power factor (195 μW/mK2) with the negative Seebeck coefficient (-51
μV/K) by encapsulation of dppf (Table 1). Moreover, we found this n-type film was stable
over 120 h in air [4].

Figure 1. TEM micrograph of dppf@SWNTs

Table 1. Thermoelectric properties of SWNTs,
dppf/SWNTs, dppf@SWNTs[1] Taylor, A. D. et al. Nano Lett. 14, 3388−3394 (2014).
[2] Dai, H. et al. J. Am. Chem. Soc. 123, 11512–11513 (2001).
[3] Y. Nonoguchi et al. Sci. Rep. 3, 3344 (2013).
[4] Y. Iihara et al. Chem. Asian. J. doi: 10.1002/asia.2016 00810 (2016).
Corresponding Author: Y. Nonoguchi
Tel: +81-743-72-6181, Fax: +81-743-72-6179,
E-mail: nonoguchi@ms.naist.jp- 135 -

3P-15
Gradual etching and long-length burning of metallic single-walledcarbon nanotubes toward semiconducting nanotube arraysżTaiki Inoue1, Keigo Otsuka1, Shohei Chiashi1, Shigeo Maruyama1,2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy NanoEngineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki. 305-8564, Japan

High carrier mobilities and finite band gaps of semiconducting (s-) single-walled carbon
nanotubes (SWCNTs) make them a promising candidate for channel materials of future
electronics. While random networks of separated s-SWCNTs have provided high enoughperformances for thin film transistor applications, high-purity and well-aligned s-SWCNT
arrays are required for high-speed field-effect transistors (FETs) in logic circuit applications.
Direct-growth of aligned SWCNTs together with long-length selective removal of metallic(m-) SWCNTs is a possible way for scalable fabrication of s-SWCNT arrays.
We developed methods for controlled etching as well as long-length removal of
m-SWCNTs. Firstly, horizontal arrays of SWCNTs were grown on crystal quartz substrates byalcohol chemical vapor deposition [1] and transferred onto silicon with silicon dioxide
substrates. Back-gated FET structures were fabricated by defining source and drain electrodes
with 20 Pm channel width and 5 - 20 Pm channel lengths. Sourcedrain voltages were applied
to SWCNT channels in various atmospheres, including ambient air, vacuum, water vapor, andoxygen with water vapor. Sequential application of increased voltages to SWCNTs in water
vapor conditions was found to induce gradual extension of nanogaps in SWCNTs (Fig. 1) [2].
We also found that the long-lengths of m-SWCNTs were burnt away by applying voltages topolymer-coated SWCNTs under water vapor and oxygen conditions (Fig. 2).

Fig.1: Gradual etching of
SWCNTs.

Fig.2: (a) Before and (b) after long-length selective burning of m-SWCNTs.

[1] S. Maruyama et al., Chem. Phys. Lett., 360 (2002) 229.
[2] K. Otsuka et al., submitted.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 136 -

3P-16
Effect of 7,8-substituents of Flavin Derivatives
on Selective Separation of Single-Walled Carbon Nanotubes
Kanako Nishimura1, Fumiyuki Toshimitsu1, Naotoshi Nakashima1, 2
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) are classified to metallic (m-) or semiconducting(s-) SWNTs according to their chirality, which is expressed by chiral index (n,m). Separation ofthem is very important for use them in many applications. Several efficient sorting methods
including gel chromatography method [1], density gradient ultracentrifugation method [2,3], useof oligo DNA [4], aqueous two-phase extraction method [5], use of dynamic coordination [6] andhydrogen polymer-based supramolecular chemistry [7] have been reported.
Recently, we found that a flavin derivative that has a long alkyl chain and an imidyl hydrogencan selectively sort s-SWNTs [8] by synthesizing various types of flavin derivatives by changing
the length of an alkyl chain and replacing an imidyl hydrogen with a methyl group. It was
revealed that the imidyl hydrogen and methyl group(s) on the 7,8-positions of the aromatic ringare essential for selective separation of s-SWNTs. However, it is not clear whether thesubstituents of 7,8-positions affect the selective separation or not. We now synthesized flavinderivatives that have a different substituent of 7,8-positions, and focus on the size and theelectronic property of the substituents. From both experimental and simulations, we reveal
important factors that recognize/sort s- and m-SWNT chirality.
This abstract is based on results obtained from a project commissioned by the New Energy andIndustrial Technology Development Organization (NEDO).
[1] H. Kataura et al., Nat. Commun. 2011, 2, 309.
[2] M. C. Hersam et al., Nat. Nanotech. 2006, 1, 60.
[3] R. B. Weisman et al., Nat. Nanotech. 2010, 5, 443.
[4] M. Zheng et al., Nat. Mater. 2003, 2, 338.
[5] M. Zheng et al., ACS Nano 2015, 9, 5377.
[6] F. Toshimitsu and N. Nakashima, Nat. Commun. 2014, 5, 5041.
[7] F. Toshimitsu and N. Nakashima, Sci. Rep. 2015, 5, 18066.
[8] N Nakashima et al., Chem. Lett. 2015, 44, 556.
Corresponding Author: N. Nakashima
Tel: +81-92-802-2840, Fax: +81-92-802-2840
E-mail: nakashima.naotoshi.614@m.kyushu-u.ac.jp- 137 -

3P-17
Efficient growth and chirality control of single-walled carbon nanotubes byextended alcohol catalytic chemical vapor deposition○Bo Hou1, Cheng Wu2,3, Yoko Iizumi3, Takahiro Morimoto3, Toshiya Okazaki3, Taiki Inoue2,
Shohei Chiashi2, Rong Xiang2, and Shigeo Maruyama1,2
1

Energy NanoEngineering Lab., Department of Energy and Environment, AIST, Tsukuba 3058564, Japan2
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
3
Nanotube Research Center, AIST, Tsukuba 305-8564, Japan

Here we report the efficient growth of super-small diameter SWNTs, high-quality SWNTs(G/D㻌 > 70) and selective growth of SWNTs by extending the work window of conventional
alcohol catalytic chemical vapor deposition (ACCVD). CVD temperature was varied from 350o
C to 1000 oC combined with the pressures range over 6 magnitudes. Scanning Raman withmany laser lines, absorption, and photoluminescence (PL) were used to characterize thechirality and abundance of SWNTs. TEM was employed for examining the quality of SWNTs
and for exploring the condition of catalysts around growth boundary. Super-small diameter
SWNTs assigned as (6,4), (5,4), (5,3), (6,1) etc.. (0.8 nm > dt > 0.52 nm) were obtained around
500 oC, 5 Pa, and their abundances were significantly increased comparing to previous reported
works. At 850 oC, 65 Pa, high-quality SWNTs which is nearly no defect were obtained. In
addition, growth mechanism is clarified through discussions on the experimental map ofextended CVD.
Furthermore, effect of the carbon feedstocks [ethanol, dimethyl ether (DME) and
acetonitrile] and catalysts (zeolite-supported Fe-Co, Cu-Co and W-Co) were studied in theextended CVD. Gas-phase thermal decomposition of ethanol, DME and acetonitrile were
simulated using the chemical kinetic models under various SWNTs growth conditions. In
addition, the different effects on the diameter and diameter distribution of SWNTs by ethanol,
DME and acetonitrile were discussed. By using Fe-Co as the catalyst, the efficient growth ofsuper-small diameter SWNTs was achieved in extended ACCVD. Cu-Co and W-Co were used
to obtain chirality controlled SWNTs. Using Cu-Co catalysts, (6,5) became predominant at 500
oC. Growth of super-small diameter SWNTs, high-quality SWNTs and the chirality controlled
SWNTs in extended ACCVD suggest the promising future works for application andfundamental understanding of growth of SWNTs.
Corresponding Author: Shigeo Maruyama
Tel: +81-29-861-2073, Fax: +81-29-851-7523,
E-mail: maruyama.nano@aist.go.jp- 138 -

3P-18Growth of Single-Walled Carbon Nanotubes from Solid-Phase Cobalt
Carbide Nanoparticles by Molecular Dynamics Simulations○Ryo Yoshikawa1, 2, Hiroyuki Ukai1, Yukai Takagi1, Yann Magnin3, Shohei Chiashi1, Christophe Bichara3,
Shigeo Maruyama1, 2
1 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2 National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan
3 CINaM, Aix Marseille University, 13288 Marseille Cedex 9, France

Since single-walled carbon nanotubes (SWCNTs) grow from metal nanoparticles in catalytic
chemical vapor deposition (CCVD) process, observation of metal nanoparticles is indispensable
for understanding the mechanism of SWCNT growth. While it is difficult to observe
nanoparticles in atomic scale experimentally, simulation is useful to observe them.
In this study, we performed molecular dynamics (MD) simulations to investigate the melting
point of Co catalyst particle and the time evolution of SWCNT growth, using home-madeTersoff-type and Brenner-Tersoff potential. We put a Co nanoparticle at the center of 10-nm
cubic cell and annealed it for 2 ns measuring the kinetic energy and the potential energy of thesystem, and then supplied carbon atoms into the cell. During the simulation, metal atoms were
under Nosé-Hoover thermostat to keep the temperature of the system.
Figure 1 (a) shows the potential energy of pure Co nanoparticles depending on the cluster
size and the temperature. We estimated the melting points from the energy jumps and confirmedthat the melting point is a linear function of cubic root of the number of metal atoms (Fig. 1(b)). Though pure Co80 and Co120 clusters are liquid at 1550 K, they formed solid carbide
structure when carbon atoms were supplied to them. The particles remained solid carbide during
and after the cap structures appeared (Fig. 2). Carbon atoms adsorbed and diffused on thesurface of particles to reach the edge of SWCNTs, and then contributed to the SWCNT growth.
(a)

(b)

(a)

(b)

−3.4
−3.6
−3.8
−4
0

N=55
N=147
N=201
N=405

N=807

1000
2000
Temperature [K]Melting Point [K]Potential Energy [eV/atom]

3000

2000

1000

0
0

0.1

0.2

−1/3

0.3

N

Fig. 2. Co carbide formation and SWCNT growth.
(a) Cubic carbide, 80 Co atoms, 1550 K.

Fig. 1. (a) Energy jump of Co nanoparticles.
(b) Size dependence of melting points estimated from (a).

(b) Layered carbide, 120 Co atoms, 1550 K.

Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421 Fax: +81-3-5800-6983 E-mail: maruyama@photon.t.u-tokyo.ac.jp- 139 -

3P-19In-Plane TEM Imaging of Bimetallic Catalyst for SWNT GrowthżRong Xiang1, Akihito Kumamoto2, Hua An1, Taiki Inoue1, Shohei Chiashi1, Yuichi Ikuhara2,
Shigeo Maruyama1, 3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Institute of Engineering Innovation, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku,
Tokyo 113-8656, Japan
3
Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), 1-2-1 Namiki, Tsukuba, 305-8564, Japan
2

Catalyst is critical for the formation of single walled carbon nanotubes (SWNTs), whileobtaining the intrinsic morphology and structure of these nano-sized particles at growth ornear-growth conditions remains challenging. We propose an in-plane TEM approach, whichenables a direct characterization of catalyst particles on a thin SiO2 film. After optimization,collective information of many particles, as well as atomic resolution of catalyst structure canbe obtained. With this new technique, we systematically investigated mono- and bi-metallic
particles including Co, Fe, Ni, Pd, Pt, and W, and studied their behaviors at high temperatures.
In this work, we focus on two bimetallic catalyst systems that are recently proposed: Co-Cu
and Co-W. The combination of Co-Cu was found to be able to produce all sub-nm verticallyaligned SWNTs. [1] In-plane TEM clearly shows that, with addition of Cu, much smaller Co
particles form epitaxially on Cu. This authoring effort contributes to the formation of highdensity small active growth sites. Co-W recently raises to be a promising catalyst forchirality-selective growth. [2] We used a sputtered Co-W and produced spatially uniform(12,6) SWNTs with enrichment of 50-70%. [3] An intermediate Co6W6C structure isunambiguously identified by selective area electron diffraction. High resolution TEM andhigh-angle annular dark-field (HAADF) STEM images reveal the details of this complex
catalyst. We believe this in-plane TEM technique provides atomic yet statistic informationthat is so far the closest to a realistic growth process.
References:[1] K. Cui et al., Nanoscale 8, 1608 (2016).
[2] F. Yang et al., Nature 510, 522 (2014).
[3] H. An et al, Nanoscale, (2016), in press.

Corresponding Author: Shigeo Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 140 -

3P-20Oxidative Decomposition of Carbon Nanotubes
and Extraction of Encapsulated Materials○Miho Yamagishi1, Haruka Omachi1,2, Masachika Kato1, Ryo Kitaura1,
and Hisanori Shinohara1,3
1

Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya
464-8602, Japan

2

Research Center for Materials Science, Nagoya University, Nagoya, 464-8602, Japan
3
Institute for Advanced Research, Nagoya University, Nagoya, 464-8602, Japan

Carbon nanotubes (CNTs) have cylindrical structure which provide an ideal cavity to create
one-dimensional (1D) nanomaterials. Recently, we have established synthesis of thinsingle-wall BN-nanotubes and diamantane polymers inside CNT [1,2]. However, since thesynthesized 1D materials are remained inside CNTs, it is hard to reveal the actual propertiesof 1D materials. Hence, removal of the CNT shell is required to isolate encapsulated 1D
nanomaterials.
In this research, we developed oxidative decomposition of CNTs under mild conditions.
With the reaction progress, absorption spectra of CNTs were gradually decreased (Fig.1a).
Most of peaks were finally disappeared after 24 hours. Interestingly, D/G ratio was improvedin early stage of the reaction (Fig.1b). The decomposition was indicated to have highselectivity, as the reaction start from defects of the CNT shells. We then demonstrated theextraction of C60 fullerene from C60@SWCNT nano-peapod by using this CNT
decomposition technology (Fig.1c). Isolation of other encapsulated 1D nanomaterials will
also be reported in this presentation.

Fig.1: (a) UV-Vis-NIR spectra and (b) Raman spectra of CNT dispersion at each reaction stage(c) Mass spectra of toluene extraction before and after the decomposition treatment of C60@SWCNT[1] R. Nakanishi, et al., Sci. Rep. 3, 1385 (2013).
[2] Y. Nakanishi, et al., Angew. Chem., Int. Ed., 54, 10802 (2015).
Corresponding Author: Haruka Omachi, Hisanori Shinohara
Tel: +81-52-789-2482, Fax: +81-52-747-6442
E-mail: omachi@chem.nagoya-u.ac.jp, noris@nagoya-u.jp- 141 -

3P-21
Growth of Single-Crystal Bi-Layer Graphene Using Alcohol CVD○Masaki Sota1 Mohamed Atwa1,2, Kotaro Kashiwa1, Naomasa Ueda1, Xiao Chen 1,
Taiki Inoue1, Rong Xiang1, Shohei Chiashi1, Shigeo Maruyama1,3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Integrated Devices and Circuits, Royal Institute of Technology, Stockholm
SE-164 40 Kista, Sweden
3
Energy NanoEngineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8564, Japan

2

Graphene, an sp2-bonded single-layer carbon sheet, is an attractive material due to its
extraordinary mechanical, thermal, and electrical properties. However, single-layer graphene(SLG) is the zero band-gap material and unsuitable for some applications which need finite
energy gaps. Several groups reported that a bandgap up to 250 meV can be opened by an
external electric field in AB-stacked bi-layer graphene (BLG) [1]. Therefore, efficient synthesis
of BLG is essential for electronic applications of graphene. Chemical vapor deposition (CVD)
is a reliable method for the synthesis of large-scale graphene. Since grain boundaries in polycrystal graphene degrade its superior properties, many efforts have been focused on enlarging
the size of single-crystal graphene. As a result, single-crystal SLG of centimeter sizes has beensynthesized using CVD, but the size of single-crystal BLG domains is still limited.
In this study, we investigated the method for the single-crystal BLG synthesis and succeeded
in synthesizing BLG domains of several hundreds of micrometers. Graphene was synthesizedusing alcohol catalytic chemical vapor deposition (ACCVD) [2]. We used a copper foil as thecatalyst and oxidized and folded it into a pocket before synthesis. CVD was performed at 1065
˚C with various pressures of Ar/H2 and ethanol. We found that SLG, BLG, and multi-layer
graphene can be grown by controlling the total pressure of the CVD condition. Figure 1 shows
large-size single-crystal BLG together with SLG. Figure 2 is the relationship between thegraphene size and the growth time. This revealed that there is an incubation time for BLG
growth after starting alcohol supply.

Fig. 1 Optical image of SLG and BLG.

Fig. 2 Relationship between BLG size and growth time.

[1] Y. Zhang et al. Nature 459, 820 (2009).
[2] X. Chen et al. Carbon, (2016) in press.
Corresponding Author: S. Maruyama
Tel: +81-03-5841-6421, Fax: +81-03-5841-6421,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 142 -

3P-22
Effects of nanobar-catalyst types on structure of graphene nanoribbon
grown with advanced plasma CVD‫ۑ‬Yuta Wato, Hiroo Suzuki, Toshiro Kaneko, and Toshiaki Kato
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Graphene nanoribbons (GNR) combine the unique electronic and spin properties ofgraphene with a transport gap that arises from quantum confinement and edge effects. Although
GNR can be made in a variety of ways, the reliable site and alignment control of GNR withhigh on/off current ratios remains a challenge.
Up to now, we have developed a novel method based on the advanced plasma CVD
with nano scale Ni catalyst (Ni nanobar) for directly fabricating suspended GNR devices [1, 2].
Although this method has outstanding advantages in terms of precise site and alignment
controlled growth of suspended GNR, there still remain a space to be studied about this method,especially for the structural controllability of GNR such as layer number, width, and length. At
the current state, the dominant GNR structures are few layered GNR with ~10 nm width andrelatively short length (~500 nm). Monolayer GNR with narrower width and longer length
should be useful for the optoelectrical applications of suspended GNRs with higher
performance.
In this study, we attempted to elucidate the effects of catalyst types with nanobar
structures on the structure of GNRs. Based on our previous study about the growth model of
GNR, it is found that the nanobar structure becomes liquid phase under the high temperature
condition during the GNR growth and the wettability of liquid phase nanobar is very important
to grow suspended GNR [2]. Then, we systematically carried out the growth of GNR withvarious types of catalysts such as Ni, Cu, and those of bi-metals with different mixture ratios.
The averaged GNR length grown with Cu nanobar becomes longer than that grown with Ni
nanobar, which can be explained by the difference of carbon solubility, wettability, and thermal
stabilities of Cu nanobar. GNR grown with Cu nanobar shows the relatively higher on/off ratio,
this can imply the layer number of GNR can be reduced by using Cu nanobar.
[1] T. Kato and R. Hatakeyama, Nature Nanotechnology7, 651 (2012).
[2] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa and T. Kato, Nature Communications 7, 11797(2016).
Corresponding Author: Y. Wato
Tel: +81-22-795-7046, E-mail:yuta.wato.s8@dc.tohoku.ac.jp- 143 -

3P-23
Enhancement of laser-induced water decomposition by 2D sheets studied byfirst-principles simulations II○Yoshiyuki Miyamoto1, Hong Zhang2, Xinlu Cheng3 Angel Rubio4
1

Research Center for Computational Design of Advanced Functional Materials, AIST,
Umezono, 1-1-1 Central 2, Tsukuba 305-0685, Japan
2
College of Physical Science and Technology, Sichuan University, Chengdu 610065, China
3
Key Laboratory of High Energy Density Physics and Technology of Ministry of Education;
Sichuan University, Chengdu, 610064, China
4
Max Planck Institute for the Structure and Dynamics of Matter and Center for
Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany
This work was motivated by recent report of metal-free photocatalysis consisting ofgraphitic carbon nitride (gC3N4) [1,2] and we have proposed usage of high-intensity pulse
laser as an alternative to ordinary light-source for achieving higher yield of H2O
decomposition. Continuing to our presentation in the last meeting, we are still investigating
property of 2D material in enhancement of laser-induced H2O decomposition by means of thefirst-principles simulation. Here we present updated results; 1) We have compared thresholdlaser intensity of H2O decomposition for an isolated molecule and for molecules above
2D-sheets, and we will present dependence of pulse-width of the laser. 2) We have proposed
an idea to combine electrical hole-doping in graphene and pulse-laser H2O decomposition forhigher yield of H and OH generation.
We have obtained significantly lower threshold laser-intensity of H2O decomposition when
H2O is above 2D sheets. [3] The cause of the threshold lowering is attributed as a fieldenhancement effect by the 2D sheets studied by this work. The threshold is further decreased
when we extended the full-width-of-half-maximum (FWHM) from 10 fs to 20fs, yet theestimated laser fluence for the H2O becomes larger with wider FWHM. The details of thecomputational method, results,
and potential application forgenerating hydrogen fuel will
be discussed. The figure shows
snapshot of the H2O dynamics
which was strongly bind tographeneunderelectricalhole-doping condition. (At the Snapshots of H2O dynamics upon pulse-laser illumination
beginning, the O-side of water (FWHM=10fs, 800nm) with laser field intensity 7V/Å.
is closer to graphene due to polar nature of the H2O molecule.)
This work is supported by the fund from MEXT, Japan, Grant-in-Aid for Scientific
Research on Innovative Areas ``Science of Atomic Layers (SATL)" (Project No.16H00925)[1] X. Wang et al, Nature Mat. 8, 76 (2009).
[2] J. Liu et al, Science 347,970 (2015).
[3] Paper in preparation.
Corresponding Author: Y. Miyamoto
Tel: +81-29-849-1498, Fax: +81-29-851-5428,
E-mail: yoshi-miyamoto@aist.go.jp- 144 -

3P-24Size separation of graphene nanosheets by gel chromatographyżShunichi Ishiguro, Takaaki Tomai, Yuta Nakayasu, Naoki Tamura, Itaru Honma
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University,
Sendai 980-8577, Japan
Top-down graphene production via the exfoliation from graphite produces a mass ofgraphene, but with structural variations in layer number, sheet size, edge type, and defectdensity, which strongly affect the electronic structure of graphene. For the useful application,
the subsequent structural separation of graphene is mandatory.
In this study, we demonstrated simple separation of grapheneusing multicolumn gel chromatography [1]. The graphene dispersedin the aqueous surfactant solution was separated via flowing
through the allyl dextran-based gel columns in series (Fig. 1).
At the first column, by the filtering effect, the unexfoliatedgraphite fragments are separated out, and the unbound fragment
consisted of thin graphene sheets. By the chromatographic
separation at the subsequent columns, it was observed that thelarge-size graphene tends to be unbound by the gel (Table 1). In thischromatographic separation, the surfactant affinity affects theadsorption priority on the gel. The reduction of surfactant Fig.1 Schematic diagram ofabsorption density on the graphene caused by the structural disorder, gel chromatography
in-plane defect and edge, will result in the preferential attachmentof small-size graphene on the
Table 1. The average sheet sizes of the unbound graphene for each column
gel surface [2, 3]. This
Column Number
1
3
10
scalable simple separation
Sheet Size [nm]
56.70
71.12
142.5
method will contribute to thefurther precise separation of graphene structure, and promote the industrial application ofgraphene.
[1] H. Liu et al., Nat. Commun. 2, 309 (2011).
[2] A. G. Hsieh et al., J. Phys. Chem. B 117, 7950 (2013).
[3] A. J. Glover et al., J. Phys. Chem. C 116, 20080 (2012).
Corresponding Author: T. Tomai
Tel: +81-22-217-5818, Fax: +81-22-217-5828
Email: ishiguro@mail.tagen.tohoku.ac.jp- 145 -

3P-25
Evaluation of GO Catalyst regarding oxidative amine coupling reactionżTakuya Isaka1, Kentaro Tajima1, Tomoki Yamashina1, Yutaka Ohta2, Kazuyuki Takai1,2
12Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan

Graphene oxide (GO) having oxygen-containing groups is expected as metal-free andenvironment-compatible catalyst. The research on GO catalyst progressed [1][2], although thedetail mechanism for GO catalytic activity is not clear yet. Investigating GO properties before/ after the catalytic reaction is a promising strategy for clarification of the mechanism. Our
previous study found that the synthesis of a xanthene derivative in water solvent might relatewith the functional group of C=O and COOH in GO [3]. But the simultaneous structuralchanges by a thermal reduction was problem. In this study, we conduct the oxidative amine
coupling reaction of benzylamine (1) to N-benzylidenebenzylamine (2) using GO progressing
even at the lower temperature, where the promotion by ʌ-ʌ interaction is expected.
GO60ÛC / 24h

(2)

(1)

After reaction

C=C C-O-C
C=O C-OH C-C

Control
Pristine GO

3400

2400

1400

Wavenumber (cm-1)

After reaction
Control
Pristine GO

3400

2400

1400

Wavenumber (cm-1)

400

Fig.2 FTIR for GO on the synthesis
reaction of a xanthene derivative[1]C. Su, M. Acik, K. Takai et al. Nat. Commun., 3, 1298, (2012)[2]A. Shaabani, M. Mahyari, and F. Hajishaabanha, Res. Chem. Intermed., 40, 8, 2799–2810 (2014)[3]FNTG50 conference, T. Isaka et al
Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002, E-mail: takai@hosei.ac.jp- 146 -

400

Fig.1 FTIR for GO on oxidative amine
coupling reaction
Transmittance (arb. units)

The following reaction using GO synthesized by
Hummers method was conducted (Scheme 1). A
mixture of (1) (3 mL) and GO (0.1 g) was stirred at60ÛC for 24 hours after pre-ultrasonication. After
filtration of GO from the reaction media and washingwith ethanol, the reaction media was characterized by
GC-MS. The chemical structure of GO before / after
the reaction was evaluated by FTIR.
The GC-MS yields for (2) in the condition with /without GO were 15% and 2%, respectively. According
to the FTIR spectrum for oxidative amine coupling
reaction (Fig.1), the reduction of oxygen-containing
functional groups of GO does not occur in the control
condition (only GO and water), while those areconsiderably reduced after oxidative amine coupling
reaction. In contrast, the spectra for the reaction inwater solvent are almost same in the control condition
and after reaction. It was suggested that the reaction
mechanism for oxidative amine coupling reaction
significantly differs from that for the reaction in water
solvent, where GO works as Brऺnsted acid.

Transmittance (arb. units)

Scheme 1 Oxidative amine coupling reaction of benzylamine to N-benzylidenebenzylamine

3P-26
Magnetic Characterization ofNOx adsorption by Nanographene Host Material
Satomi Nishijima1, Asataro Yamada1, Kazuyuki Takai1, 2
12

Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, JapanNOx are one of the major chemical species causing acid rain pollution, where NO molecule ismajor species at the source of pollution. To eliminate gaseous NOx diluted in huge volume ofair, adsorption by activated carbon fibers (ACFs) is investigated as a promising strategy [1].
However, the details mechanism of NOx adsorption has been not well known yet. In
microscopic view point, ACFs consists of 3D random network of nanographenes, which isinteresting host material having nanospace between nanographenes and the localized spins
originating from the electronic states at edge part. In this study, adsorption properties andchemical reactivity of NO and its derivatives in activated carbon fibers as nanographene hostmaterial is investigated in terms of spin magnetism.
Gaseous NO molecule was adsorbed into activated carbon fibers (FR-20, Kuraray)
vacuum-heat-treated in advance. The magnetic susceptibility was measured by SQUID
magnetometer (MPMS-1 Quantum Design) at 1 T in the range of 2 – 300 K, where themagnetization was measured in the field of 0 – 1 T at 2 K. X-band ESR measurement was
performed by using JEOL FA-300. The temperature dependence of the susceptibility indicatesthe significant reduction in the localized spin density Ns of ACFs upon adsorption of 5.7 kPaof NO gas (Ns = 7.91019 to 3.31019 spin g-1), where the Weiss temperature ȟ decreases
from -7 to -2. The reduction in the exchange interactions between spins is also confirmed by
the magnetization curve at 2 K. This is well explained by the NO pressure dependence of ESR
for ACFs (Fig. 1). The rapid reduction of ESR linewidth and g-value upon even slight amountof NO molecule indicates strong antiferromagnetic interactions between edge-state spins andNO spins caused by adsorption of NO molecule on
the edge of nanographene. On the other hand, the
ESR intensity gradually reduces at the lower NO
pressure but becomes increasing and decreasing
again at the higher pressure, suggesting thetermination of the edge-state spins by NO
chemisorption on the edge of nanographene withsimultaneous physisorption of magnetic NO
molecules and their dimerization at the higher NO
pressure. The mechanism of elimination NO by ACFs
are revealed as the fast chemisorption process on theedges of nanographene followed by physisorption
into nanospace among nanographene in ACFs in by
investigation in terms of spin magnetism as probe.
[1] T. Shimohara et al, J. Jpn. Soc. Atmospheric Env., 48, 65-73(2013) [2] T. Enoki and K. Takai, Solid State Comm., 149,
1144-1150 (2009).
Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002,
E-mail: takai@hosei.ac.jp- 147 -

Fig. 1 NO pressure dependence of ESR
intensity (a), linewidth (b), and g-value (c)3P-27
Electrochemical grafting of aryl molecules onto graphene on Au○Shun Tanno1, Yusuke Sato2, Ryota Kumagai3, Koji Nakashima3,
Masaru Kato1,2, Satoshi Yasuda3, Kei Murakoshi3, Ichizo Yagi1,2
1

Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810, Japan
Faculty of Environmental Earth Science, Hokkaido University, Sapporo 060-0810, Japan3
Department of Chemistry, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan2

 Graphene has been expected to be used as electronic device materials thanks to its high mechanical strength and electroconductivity. Graphene surfaces can be modified to control its
electronic properties and interactions with other materials. Aryl molecules are chemicallygrafted to graphene monolayers on SiO2 and Al2O3 (sapphire) substrates.[1] To make tunnel
junctions, we need to graft molecules densely packed and highly oriented on graphene electrodes.
Herein, we report electrochemical grafting of aryl molecules onto graphene on polycrystalline Au, Au(poly). Graphene was grown on Au(poly) substrates by chemical vaper deposition.[2]Electrochemical grafting of 4-propylphenyl group onto the graphene surface was performed byelectrochemical reduction of in situ generated aryldiazonium cations.[3, 4] Graphenes before andafter molecular grafting were characterized by Raman spectroscopy.
Raman spectra showed that a few layers of graphene covered Au(poly). D band intensity
over G band intensity ratios (ID/IG) of graphene were determined to be 0.438 and 2.66 before
and after grafting, respectively. This result indicated that 4-propylphenyl groups may be grafted
onto edges and defects of graphene on Au(poly). We will also discuss electrochemical graftingof aryl molecules onto graphene on Au(111).
Scheme 1: Electrochemical reduction of in-situ generated aryldiazonium cations on gold.

[1] Q. H. Wang, et al., Nature Chem., 4, 724, (2012). [2] S. Yasuda, et al., J. Phys. Chem. Lett., 6, 3403, (2015).
[3] T. Breton, et al., Langmuir, 24, 8711, (2008). [4] S. Boland, et al., Langmuir, 24, 6351, (2008).
Corresponding Author: S. Tanno
Tel: +81-11-706-2258, Fax: +81-11-706-4529,
E-mail: shuntanno@ees.hokudai.ac.jp- 148 -

3P-28Fabrication of Graphene Composite Plasmon-Active Photoelectrode○Kensuke Yasuda, Hiro Minamimoto, Zhou Ruifeng, Satoshi Yasuda, Kei Murakoshi
Department of Chemistry, Faculty of Science, Hokkaido University,
Sapporo 060-0810, Japan
It is well known that Au nano-structures supported on TiO2 (Au / TiO2) substrate
generate photocurrent under near-infrared light illumination due to the excitation of localized
surface plasmon resonance. Although it is possible to improve the usability of light beyond the
intrinsic limits of the materials, the photoelectronic conversion efficiency is still low for theapplication in photovoltaic devices. In order to enhance the photoelectronic conversion
efficiency of this system, it can be expected that the formation of nano multi-layer structuresusing thin materials is one of the effective way. Graphene, which has good mechanical,
electrical, and optical properties, can be considered as an appropriate material for the system.
In this study, we tried to fabricate the graphene composite Au / TiO2 photoelectrode for highefficiency photoelectric conversion devices. In addition, micro Raman measurement was also
carried out for the analysis of its properties.
Plasmon active Au nano structures were deposited on an n-type TiO2 substrate. Single
graphene layer synthesized by CVD method was transferred
onto the Au / TiO2. Then, Au nano structures were depositedon the graphene layer again (Au / Graphene / Au / TiO2).
SEM image of the prepared substrate is shown in Fig. 1.
From the image, the formation of Au / Graphene / Au layer
structure was confirmed. Additionally, through thephotoelectrochemical measurements, it was found that thephotocurrent response was completely different from Au /Fig.
ig. 1. SEM image of the Au /Graphene / Au / TiO2 substrate.

TiO2 substrates. As the next step, in-situ electrochemical
Raman measurements were performed as shown in Fig. 2.
Consequently, we have succeeded in evaluating the careertransfer process and electronic state of the Au / Graphene /Au / TiO2 system.
Corresponding Author: K. Murakoshi
TEL: +81-(0)11-706-2704, FAX: +81-(0)11-706-4810
E-mail: kei@sci.hokudai.ac.jp- 149 -

Fig. 2. Schematic illustration of thesystem for in-situ electrochemical
Raman spectroscopy. C.E.: Pt wire,
R.E.:
Ag/AgCl(sat.
KCl),
electrolyte solution: 0.5 M Na2SO4.
Excitation wavelength was 785 nm.

3P-29_Direct observation of ultrafast carrier dynamics in graphene on SiC(0001)
studied by time- and angle-resolved photoemission spectroscopy○T. Someya1, H. Fukidome2, H. Watanabe3, T. Yamamoto1, M. Okada1, H. Suzuki4,
Y. Ogawa1, T. Iimori1, N. Ishii1, T. Kanai1, K. Tashima2, B. Feng1, S. Yamamoto1, J. Itatani1,
F. Komori1, K. Okazaki1, S. Shin1 and I. Matsuda1
12Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan3
Department of Physics, Osaka University, Suita 565-0871, Japan
4
Department of Physics, The University of Tokyo, Bunkyo-ku 113-0033, Japan

Because of its broadband absorption, high carrier mobility, and ultrafast optical response,graphene attracts the attention of many researchers as a promising material fornext-generation optoelectronic devices. Nowadays, many graphene-based optoelectronic
devices are test-manufactured and demonstrated to have a certain practical capability.
However, contrary to this fact, the most elementary phenomena, i.e., the photo-excited
carriers in graphene, is not exactly understood. Therefore, uncovering the carrier dynamics ingraphene is essential not only for designing graphene-based optoelectronic devices but also
for improving their performance.
In this study, we performed time- and angle-resolved
photoemission spectroscopy_(TRARPES) on graphene epitaxially grown on a SiC(0001) C-terminated surface to reveal
underlying relaxation mechanisms of photo-excited graphene carriers. TRARPES has been
one of the most powerful experimental techniques to trace a transient distribution ofphoto-excited carriers owing to its simultaneous accessibility to both momentum and energy
spaces. As an example, Figure 1 shows the TRARPES spectra of the C-face graphene taken atseveral delay times (hνpump = 1.55 eV, 660μJ/cm2, 300 K). In the poster session, we will show
the pump fluence and lattice temperature dependence of the obtained transient electronic
temperatures and discuss the possible decay scheme of the photo-excited graphene carriers.

_
Figure 1. TRARPES spectra of the C-face graphene taken near K point at pump-probe delays of(b) 90 fs, (c) 200 fs, (d) 400 fs and (e) 1000 fs, respectively.
Corresponding Author: I. Matsuda
Tel: +81-(0)4-7136-3402,
E-mail: imatsuda@issp.u-tokyo.ac.jp- 150 -(a) -1000fs,

3P-30Work function modulation of edge functionalized graphene nanoflakes
Remi Taira, Ayaka Yamanaka, and Susumu Okada
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8571 Japan
Electronic structure of graphene nanoflakes is sensitive to their sizes, edge atomic structure, andedge functionalized groups. Graphene nanoribbons with hydrogenated edges are known to beeither metals or semiconductors depending on their width and edge morphology. According totheir tunable electronic structure by the morphology and chemical modification, graphene
nanoflakes are keeping a premier position in emerging materials for various functional devices
in the wide areas of the modern technology. Therefore, in the present work, we aim toinvestigate how the work function and electronic structure of the graphene nanoflakes dependon the functionalized groups using the density functional theory with the local density
approximation. To investigate the effect of the functionalized groups attached to the grapheneedges, we consider the graphene nanoribbon with width of 1.5 nm and zigzag edges of whichedges are asymmetrically terminated by H and functionalized groups R, where R are -O, -OH,
-COH, and -COOH. Figure 1 shows the electrostatic potential of the asymmetrically terminatedgraphene ribbons on the plane normal to the ribbon direction. For all functionalized groups
except OH, the work function at the edge functionalized by these groups is larger than that at
the H-terminated edge. In contrast, the edge with OH functionalization exhibits opposite nature:
The calculated work function at the OH-terminated edge is smaller than that at the H-terminatededge.

Fig. 1: Electrostatic potential of asymmetrically edge functionalized graphene ribbons with O, OH, COH, and
COOH groups.

Corresponding author: R. Taira (resoccermi222@gmail.com)- 151 -

3P-31
Charge/Covalent Interactions at the Interface
between Graphene and ElectrolyteżDaisuke Suzuki1, Kazuyuki Takai 1, 2
1

2

Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan

Phenomena at the interface between carbon electrode and electrolyte such as storage anddegradation mechanism, Solid Electrolyte Interphase (SEI) formation are crucial for the
performance of energy storage devices. However the phenomena are still unclear because ofcomplicated structure of conventional carbon electrode materials. In this study, theelectrochemical interactions at the interface between graphene electrode as the model
structure of carbon electrode materials and electrolyte solution is investigated in order toclarify the phenomena in energy storage devices.
Gate voltage dependence of the conductivity was measured for graphene FET on SiO2
substrate with the bipolar electrochemical configuration, where the graphene channel and Pt
wire in the electrolyte were applied as working and counter electrodes, respectively. 1 M KCl
and 1 M LiCl aqueous solution and 1 M LiBF4 organic solution (EC/DMC) were used aselectrolyte solution. Raman spectroscopy (532 nm) was carried out under an atmosphericcondition. A reversible behavior of the transfer curve and an irreversible behavior of theelectrochemical currents upon cycles of sweeping top gate voltage were observed in both KCl
and LiCl solutions. In the case of LiBF4 organic electrolyte solutions, increment ofelectrochemical current below – 2 V becomes suppressed after cycles of gate sweeping (Fig.1).
This is attributed to SEI formation by the reaction between graphene and EC/DMC [1] [2]. In
either condition, the position of G band and 2D band didn’t change in Raman spectroscopy,
indicating the absence of chemical doping. On the other hand, D band appeared at only edge
parts in graphene in 2D-Raman mapping after electrochemical cycles in LiBF4 (Fig.2). SEI
formation occurs by the reaction between chemically active graphene edges and EC/DMC,
suggesting significant roles of edge of carbon electrode in actual energy storage devices.

EC Current I (ȝA)

0
0.1
-5

-10

Conductivity ı (mS)

0.2

5

0
-3

-2

-1

VGraphene-Topgate (V)Graphene0

Fig.1 Gate voltage dependence of Conductivity
in FET with LiBF4 organic electrolyte

Fig.2 D band mapping of graphene
after electrochemical cycles[1] Elad Pollak et al, Nano.lett. 10, 3386 (2010)[2] Jingshu Hui et al, ACS.Nano. 10, 4248 (2016)
Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002, E-mail: takai@hosei.ac.jp- 152 -

3P-32Growth and optical properties of Nb-doped WS2 monolayersżShogo Sasaki1, Yu Kobayashi1, Zheng Liu2, 3, Kazutomo Suenaga3
Yutaka Maniwa1, Yuhei Miyauchi4, Yasumitsu Miyata1, 5
1
2

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
Inorganic Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
3
Nanomaterials Research Institute, AIST, Tsukuba, 305-8565, Japan
4
Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan
5
JST, PRESTO, Kawaguchi 332-0012, JapanFor atomic layers of transition metal dichalcogenides, alloying is one of the most usefulways to control their physical properties. To date, several groups have been reported thatcomposition dependence of bandgap on monolayer Mo1-xWxS2 alloys [1, 2]. In contrast, it isstill an important issue to understand the effects of substitutional doping of the other elements
to create impurity states and modulate carrier densities. To solve this issue, we havedeveloped a growth method of monolayer Nb-doped WS2 and investigated its opticalproperties [3]. In this presentation, we report the nonlinear behavior of photoluminescence(PL) intensity in monolayer Nb-doped WS2.
Monolayer Nb-doped WS2 crystals were grown on SiO2/Si substrates by halide-assisted
chemical vapor deposition (CVD) [4] using WO3, Nb and NaCl powders at 800 ~ 850 °C
under argon/sulfur atmosphere. Scanning transmission electron microscope observation
reveals that the Nb atoms were substituted into the W site at a rate of 0.5%. Nb-doped
samples have new PL peaks (L) at 1.4-1.6 eV with free excitons peak (X) at room temperature(Fig. 1a). The intensities of peak L show a saturation behavior with the increase in excitation
power (Fig. 1b). We found that this behavior can be reproduced by the rate equation model fora three-level system consisted of free excitons (X), localized excitons (L), and ground states(Fig. 1b). These results indicate that the observed PL peaks are assignable to the emission
from impurity states generated by the substitution of Nb as shown in Fig. 1c.

Fig. 1 (a) Normalized PL spectra of Nb-doped WS2 measured at four different laser powers. (b) PL intensities
of L (upper panel) and X (lower panel) peaks plotted as a function of excitation density. Solid lines indicate thefitting results. The inset shows a schematic of the three-level system of doped WS2. (c) Schematic illustration of
PL from an Nb-doped site in monolayer WS2.
[1] Y. Chen et al. ACS Nano 7, 4610–4616 (2013). [2] Y. Kobayashi et al. Nano Res. 8, 3261-3271 (2015).
[3] S. Sasaki et al. Appl. Phys. Express 9, 071201 (2016). [4] S. Li et al. Appl. Mater. Today 1, 60-66 (2015).
Corresponding Author: Yasumitsu Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp- 153 -

3P-33Layer number controlled synthesis of integrated WS2 array○Chao Li , Toshiro Kaneko, Toshiaki Kato
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Recently, relatively new type of two-dimensional (2D) nano materials such as graphene andtransition metal dichalcogenide (TMD) initiate new avenue in electronic science domain as
their atomically thin thickness, superior electrical, mechanical and optical properties [1-4].
As one of the promising nano-materials, graphene possesses high carrier mobility and highoptical transmittance, which can be a potential candidate for next generation electrical devices
with high performance. Nevertheless, it is very difficult to be straightly applied for thesemiconducting device fields due to its zero band gap. Layered TMD that is well known as its
excellent semiconducting properties, which can be tuned from indirect band gap to direct band
gap by controlling its layer number from multilayer to monolayer. However, there still remainlots of issues we have to conquer for the practical applications with TMD-based devices. Above
all, position, crystal size, orientation, and layer number controlled synthesis are regarded as
crucial issues at the current production stage.
In our research group, we have developed a unique method, which can realize the position
controlled synthesis of monolayer and single-crystal WS2 in large scale with Au dot as anucleation guide [5]. In this research, we improved the previous method and realized layer
number controlled synthesis of the integrated WS2 array by adjusting the growth condition.
Since the suitable layer number of TMD crystal strongly depends on the type of applications,layer number control for the integrated WS2 is very important subject. We explored that the Ar
gas flow rate is very sensitive to the layer number of WS2 grown from gold dot. With Ar gas
flow rate ranging from low to high, layer number of WS2 can be controlled from monolayer to
few-layer, which may attribute to the difference of growth speed ratio of vertical to lateral
direction within the range of Ar flow rate used in our study.
[1] T. Kato and R. Hatakeyama, ACS Nano 6 (2012) 8508.
[2] T. Kato and R. Hatakeyama, Nature Nanotechnology 7 (2012) 651.
[3] T. Kato and T. Kaneko, ACS Nano 8 (2014) 12777.
[4] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa, and T. Kato, Nature Communications, 7 (2016)
11797.
[5] T. Takahashi, T. Kato, T. Kaneko, Abstract of the 50th Fullerenes-Nanotubes-Graphene General Symposium p.
178, 2016.
Corresponding Author: Chao Li
Tel: +81-22-795-7046, Fax: +81-22-263-9225,
E-mail: li15@ecei.tohoku.ac.jp- 154 -

3P-34
Polarization-resolved photoluminescence spectroscopy on monolayertransition metal dichalcogenides under electrostatic gating○Wenjin Zhang, Yusuke Hasegawa, Shinichiro Mouri, Kazunari Matsuda,
and Yuhei Miyauchi
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

Ids(A)

Mono- and few-layers of transition-metal dichalcogenides (TMDs) MX2, where M
and X are a transition metal (typically Mo, W, Ta) and a chalcogen (typically S, Se orTe), respectively, have recently emerged as two dimensional (2D) semiconductors
promising for future electronics and optoelectronics applications beyond graphene[1-6]. Their hexagonal lattice structures are similar to those of graphene, but unlike
graphene with zero band gap, some monolayer (1L) TMDs have finite direct bandgaps; this facilitates semiconductor device applications of these 2D materials. In 1L
TMDs such as MoS2 and WSe2, there are two inequivalent valleys, K and K’, inmomentum space. The strong spin-orbit interaction and the intrinsic structural
inversion asymmetry enable a mutual conversion between valley polarized states andcircularly polarized photons [3, 4]; this unique property further makes these materials
attractive, especially for exploiting new families of devices relying on valley degreeof freedom in signal processing, called valleytronics. However, relaxation of thepolarized valley state is very fast, and it has been strongly desired to clarify the valley
relaxation mechanism and prolong the valley lifetimes in 1L-TMDs.
Here we examine the effect of carrier
10-4
density on the polarized photoluminescence
Vds = 2.0 V(PL) properties reflecting the valley-5
10polarization states and lifetimes of excitons(and trions) to understand the valley
10-6
3 μm
relaxation mechanism in 1L-TMDs. Fig. 1-7
10shows the source-drain current (Ids) versus
gate voltage (Vg) measured on a 1L-MoS2
10-8
field-effect transistor (FET) device (inset)
fabricated to modulate the carrier density.
-80 -60 -40 -20 0 20 40 60 80
Effects of the electrostatic gating on the
V (V)polarization-resolved
photoluminescenceFig. 1. Source-drain current (Ids) versus
gate voltage (Vg) measured on the
spectra at low temperature conditions will
fabricated monolayer MoS2 FET device.
be discussed.
Inset shows a picture of the device.
g[1] S. Koirala et al., Phys. Rev. B. 93, 075411 (2016)[2] S. Mouri, Y. Miyauchi, and K. Matsuda, Nano Lett. 13, 5944 (2013)[3] K. F. Mak et al., Nat. Nanotechnol. 7, 494 (2012)[4] D. Xiao et al., Phys. Rev. Lett. 108, 196802 (2012)[5] K. F. Mak et al., Nat. Mater. 12, 207 (2013)[6] C. Chakraborty et al., Nat. Nanotechnol. 10, 507 (2015)
Corresponding Author: Y. Miyauchi
Tel/Fax: +81-774-38-3463/+81-774-38-4567
E-mail: miyauchi@iae.kyoto-u.ac.jp- 155 -

3P-35
Electron beam lithography induced strain in MoS2 crystal○Masahiro Matsunaga1, Ayaka Higuchi1, Guanchen He2, Tetsushi Yamada1, Peter Krüger1
Jonathan P. Bird1,2, Yuichi Ochiai1 and Nobuyuki Aoki1, 3
1Graduate School of Advanced Integration Science, Chiba University,
Chiba 263-8522, Japan2
Department of Electrical Engineering, University at Buffalo, SUNY,
Buffalo, New York 14260-1920, USA
3
JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan

In recent studies, molybdenum disulfide, MoS2, which has layered structure, has been
attracted lots of interests because of its properties [1]. Typically, it exhibits semiconducting
properties having a band gap of 1.8 eV in the monolayer structure. Therefore, it has beenstudied so as to be utilized as a field effect transistor (FET). In our study, we use scanning
gate microscopy (SGM) to examine characteristic of MoS2. SGM can visualize local transport
properties in semiconducting materials using a metallic coated cantilever as a mobile top gate.
Single layer MoS2 crystals which were directly grown on SiO2/Si substrates by chemical
vapor deposition and provided by the Ajayan group at Rice University [2]. Source and drainelectrodes (Cr/Au) were patterned by electron beam lithography [3].
In our previous study [4], we reported that unusual SGM response was observed inside thechannel. In addition, huge potential drop was occurred at the same position where SGM
response was observed. We concluded that a different electric property was induced byelectron beam exposure.
Here, we measured photoluminescence and Raman mapping of MoS2 crystal having
exposed and unexposed region. From the results, compressive strain is induced by electron
beam exposure. Moreover, the exposed region has slightly wider band gap than the unexposed(usual) one. Therefore, a small potential barrier is formed at the boundary between the
exposed and the unexposed MoS2 and then it behaves active in the SGM image.
Furthermore, we calculated the relationship between a band gap shift and an induced
biaxial strain to estimate by a first principle DFT calculation. We estimated that ~0.3 % strain
is induced by electron beam exposure.
The work was supported in part by JST-PRESTO and the Science of Atomic Layers, a
Grant in Aid for Scientific Research from MEXT.

[1] Q. H. Wang et al., Nature Nanotech. 7, 699 (2012).
[2] Y. Zhan et al., Small 8, 966 (2012).
[3] G. He et al., Nano lett. 13, 4212 (2015).
[4] A. Higuchi et al, The 50th FNTG General Symposium 1P-38 (2016).
Corresponding Author: N. Aoki
Tel: +81-43-290-3430, Fax:+81-43-290-3427
E-mail:n-aoki@faculty.chiba-u.jp- 156 -

3P-36
Optimization of Preparation Conditions for Fibrous Aggregates ofSingle-Walled Carbon NanohornsżRyota Yuge1, Fumiyuki Nihey1, Kiyohiko Toyama1, and Masako Yudasaka2, 3
1

IoT devices Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
National Institute of Advanced Science and Technology (AIST), Tsukuba, 305-8565, Japan
3
Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan
2

Single-walled carbon nanohorns (SWCNHs) usually assemble in spherical forms [1], andthey are attractive having high dispersibility in solutions and large specific surface area.
However, for example, when used for electrical capacitors, the low electrical conductivity has
been a drawback. Recently, we have succeeded in preparing SWCNHs aggregated in a fibrous
form, named as carbon nanobrushes [2]. The carbon nanobrushes have high dispersibility insolutions, large specific surface areas, and high electrical conductivity [3]. Therefore, they arehighly expected to show the high performance when used in various electrical devices. The
carbon nanobrushes are prepared by CO2 laser ablation of iron-containing carbon target atroom temperature. Currently, the yield of carbon nanobrushes is small and the major products
are the spherical aggregates of SWCNHs. In this study, we have optimized theiron-concentration in carbon target to achieve the high yield of carbon nanobrushes. Theirstructure and electrical properties were also characterized.
In the experiments, the various iron concentrations in the target were tested. The target of 30
mm in diameter and 60 mm in length was rotated at 2 rpm for 30 second during the laser
ablation. The CO2 laser was operated at the power of 3.5 kW in the continuous-wave mode.
The buffer gas was nitrogen, and its pressure and flow rate in the growth chamber were kept
at about 760 Torr and 10 L/min, respectively, by controlling the evacuation rate.
From SEM and STEM observation of the obtained samples, the ratio of the carbon
nanobrushes in samples depended strongly on the iron concentration in carbon targets.
Especially, we found that a lot of carbon nanobrushes were prepared at the 1 at %. The TGA
measurements showed that combustion temperature of carbon nanobrushes and spherical
SWCNHs was almost same. From EDX and XPS measurements, the iron particles were foundin carbon nanobrushes, and they were metal iron. The details will be shown in thepresentation.
[1] S. Iijima et al. Chem. Phys. Lett. 309, 165 (1999).
[2] R. Yuge et al. Ad. Mater. in press.
Corresponding Author: R. Yuge
Tel: +81-29-850-1566, Fax: +81-29-856-6137
E-mail: r-yuge@bk.jp.nec.com- 157 -

3P-37
Ambipolar transistors based on random networks of WS2 nanotubes○Mitsunari Sugahara1, Hideki kawai 1, Yohei Yomogida1, Yutaka Maniwa1, Susumu Okada2,
and Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
2
Pure and Applied Sciences, Tsukuba University, Ibaraki 305-8577, Japan

Tungsten disulfide (WS2) nanotubes, which have a cylindrical structure of two-dimensionalWS2 sheet, can exhibit various unique properties because of their quantum conditions along
circumference direction. In contrast to single walled carbon nanotubes, which are well-known
nanotube materials and have not only semiconducting but also metallic types, WS2 nanotubes
exhibit only semiconducting characteristics regardless of how the sheet is rolled, and thus havegreat advantages for semiconductor device application such as transistors. However, therandom networks of WS2 nanotubes have not yet shown evidence of suitable electronic
properties for applications. For example, previously reported electronic characteristics, such as
opto-electronic and field-effect properties, are limited only to a single rope of the WS2
nanotubes. [1] In this study, we investigated capability of carrier injections on WS2 nanotubes
networks through electrolyte gating approaches, and investigated the potential of WS2
nanotubes films as semiconducting channels [2]. First, we fabricated WS2 nanotube random
network film on the PTFE-membrane-filter by filteration processes. Then we fabricated a WS2
nanotube film on a channel between the source and drain electrodes by a transfer process, andcompared field-effect transistor characteristics with carrier injections using ionic liquid gating and
SiO2 gating (Fig. 1). In the case of SiO2 gating, we couldn’t observe any field-effect on thesource-drain current. However, in the case of ionic liquid gating, we could observe theambipolar characteristic. Here carriers were injected to WS2 nanotubes through formation ofelectric double layers on their surfaces byelectrolyte gating. In addition, hole andelectron carrier injections were also
confirmed by Raman measurements,
supporting FET transistor results.
[1] R. Levi et al., Nano Lett. 13, 3736 (2013) [2]
M. Sugahara et al., Appl. Phys. Express 9,075001 (2016)
Corresponding Author: Kazuhiro Yanagi e-mail:yanagi-kazuhiro@tmu.ac.jp

FIG1: Transport properties of electrolyte gating
and back-gating on WS2 nanotube networks- 158 -

3P-38Self-assembled nanofibers of fluorinated bisanthene derivatives○Hironobu Hayashi1, Hiroko Yamada1
1

Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST),
8916-5, Takayama-cho, Ikoma, Nara 630-0192

Nanographenes, small pieces of graphene, are regarded as promising fluorescentmaterials for sensor and bioimaging.1 There are mainly two ways to prepare nanographenes,
that is, top down and bottom-up methods. A bottom-up method has an advantage tosynthesize atomically precise nanographenes, which is important for fine-tuning the physicalproperty and understanding the structure-property relationships. A bisanthene is regarded as
the smallest type of nanographene with the peak at 650 nm in concentrated sulfic acid.2 Whilea pristine bisanthene has a fascinating zigzag edged graphene nanoribbon (GNR) character
which shows low band gap compared with arm-chaired GNR character,3 it is highly unstable
due to the high highest occupied molecular orbital energy level. Therefore, the highly stablebisanthene derivatives are desirable for practical applications.
On the other hand, fluorine has unique properties such as the second smallest van delWaals radius and the largest electronegativity. Therefore, fluorination is known as thepowerful method to tune the stability, solubility, redox potential, optical property, and solidstate packing of compounds. Here we report the synthesis of meso-substituted bisanthene
derivatives with different degree of fluorine substitution on bisanthene core.
Triisopropylsilyl(TIPS)ethynyl group and phenyl group were introduced at meso-position toenhance the stability of the electron rich bisanthene. The effect of fluorine substitution on thephysical property and the supramolecular architecture were also investigated.
Briefly, fluorine substitution on bisanthene core effectively tuned the physicalproperties. The absorption and emission maxima were blue-shifted with increasing the degreeof fluorination. It should be noted that TIPSethynyl substituted octafluoro-bisanthene
derivative (F8) displayed strong fluorescence at 657 nm with high fluorescence quantum yield(84%) and excellent photostability. We also found that F8 strongly stacked in the solid stateand self-assembled into bundles of crystalline-like long nanofibers.

[1] J. Shen, Y. Zhu, X. Yang, C. Li, Chem. Commun. 48, 3686 (2012).
[2] S. M. Arabei, T. A. Pavich, J. Appl. Spectrosc. 67, 236 (2007).
[3] A. Konshi, Y. Hirao, K. Matsumoto, H. Kurata, R. Kishi, Y. Shigeta, M. Nakano, K. Tokunaga, K. Kamada,T. Kubo, J. Am. Chem. Soc. 135, 1430 (2013).
Corresponding Author: H. Hayashi
Tel: +81-743-72-6136, Fax: +81-743-72-6042,
E-mail:hhayashi@ms.naist.jp- 159 -

3P-39Synthesis of Sulfur-doped Graphene Oxides○Haruka Omachi,1,2 Zois Syrgiannis,3 Yasuhiro Kinno,2 Maurizio Prato3
and Hisanori Shinohara2,4
1

Research Center for Materials Science, Nagoya University, Nagoya, 464-8602, Japan.
23Department of Chemistry, Graduate School of Scienece, Nagoya University.
Centre of Excellence for Nanostructured Materials (CENMAT), INSTM, Dipartimento di
Scienze Chimiche e Farmaceutiche, Università di Trieste, Italy.
4
Institute for Advanced Research, Nagoya University.

Sulfur-doped graphene oxide provides an emerging applications such as the material for
lithium ion battery, dye-sensitized solar cells and the composition with metal nanoparticles.
However, reported methods of sulfur-doping to graphene oxide have employed some harshreaction conditions such as thermal annealing with sulfur reagents [1].
Here we present synthesis of sulfur-doped graphene oxide by the reaction with Lawesson’s
reagent. Graphene oxide, prepared by using a modified Hummers method [2], was refluxedwith Lawesson’s reagent in THF solvent. Resultant sulfur-doped graphene oxide wasobserved by transmission electron microscopy (TEM) (Figure 1). Energy dispersive X-ray
spectrometry (EDX) measurement and X-ray photoelectron spectroscopy (XPS) analysis
revealed successful sulfur-doping to graphene oxide. Other characterizations will also bereported in this presentation.

Figure 1. TEM image of synthesized sulfur-doped graphene oxide[1] (a) Z. Yang et al., ACS Nano, 6, 205 (2012). (b) H. L. Poh et al., ACS Nano, 7, 5262 (2013).
[2] (a) W. S. Hummers et al., J. Am. Chem. Soc., 80, 1339 (1958). (b) E. L. K. Chng et al., Chem. Eur. J., 19,8227 (2013).
Corresponding Author: Haruka Omachi, Hisanori Shinohara
Tel: +81-52-789-2482, Fax: +81-52-747-6442
E-mail: omachi@chem.nagoya-u.ac.jp, noris@nagoya-u.jp- 160 -

ⴭ⪅⣴ᘬAuthor Index

Chiashi, Shohei

Author Index

1P-14,

2-2,

3P-15,

3P-17,

3P-18, 3P-19,

3P-21

    Bold number: Speaker<A>

Chiu, Yi-Jing

1P-40

Cuong, Nguyen Thanh

1P-27

Abe, Fumiyoshi

2P-25

Abe, Shuhei

2-11Abuillan, Wasim

1P-4

<D>

Ajiki, Hiroshi

1S-3

D'Arcié, Lorenzo

2-6

Akasaka, Takeshi

2-4

De Feyter, Steven

3-5

Akita, Seiji

1P-23,

1P-25, 2P-11,

Dresselhaus, Mildred S.

2P-33

2P-13
An, Hua

2-2,

3P-19

<E>

Anno, Yuki

1P-23,

1P-25

Eda, Junko

1P-8

Aoki, Nobuyuki

1-10,

3P-35

Edo, Michiko

2P-16

Aoshima, Hisae

1P-3

En, Lim

1P-36

Aoyagi, Shinobu

3P-2,

3P-5

Endo, Kei

3P-11

Arie, Takayuki

1P-23,

1P-25, 2P-11,

Endo, Morinobu

1P-24

2P-13

Endoh, Hiroyuki

3P-11

Ariga, Katsuhiko

2P-2

Esconjauregui, Santiago

2-6

Asaka, Koji

3P-6

Atwa, Mohamed

3P-21

<F>

Awaya, Keisuke

1P-28

Fei, Wenxi

2P-35

Feng, Baojie

3P-29

Fujigaya, Tsuyohiko

1P-11

Fujii, Shunjiro

2-3,

Fujii, Takayuki

1P-18

<B>
Baba, Takuma

1P-12

Baek, Jinseok

3-4,

Bairi, Partha

2P-2

Fujimoto, Yoshitaka

1-11,

Bandow, Shunji

2P-20

Fujita, Takeshi

3-3

Bichara, Christophe

3P-18

Fujita, Yasuhiko

3-5Bird, Jonathan P.

1-10,

Fujiwara, Kyosuke

1P-21,

Burk, Alexandra

1P-4

Fukidome, Hirokazu

3P-29

Furukawa, Ko

1P-5

Furutani, Sho

1P-6

Futaba, Don

1-4,

<C>
Chao, Liu

2P-2

Chen, Chin-Fu

2P-39

Chen, Xiao

3P-21

Cheng, Xinlu

3P-23

3P-8

3P-35

2P-17
Futagoishi, Tsukasa- 161 -

2P-5

2-5,

3P-4

2-1

2P-21

1P-10,

2S-5,

<G>

Honma, Itaru

3P-24

Gao, Weilu

1P-31

Hou, Bo

3P-17

Gao, Yanlin

1P-34

Hsieh, Ya-Ping

1P-40,

Gorgoll, Ricardo

1P-4

Huang, Shengxi

2P-33

Greenwood, John

3-5

Guo, Huaihong

2P-33

2P-39

<I>

<H>

Ideue, Toshiya

1P-9

Igarashi, Keisuke

2-11

Hano, Shigeki

1P-10

Iida, Tamio

1-13

Harada, Yoichi

1P-31

Iihara, Yu

3P-14

Harano, Koji

1-12,

Iijima, Sumio

2P-15

Harigai, Toru

1-13

Iimori, Takushi

3P-29

Hasdeo, Eddwi H.

1P-31,

Iizumi, Yoko

2P-15,

Hasegawa, Kana

3P-13

Ikeda, Keiichiro

3-6

Hasegawa, Syun

2P-22

Ikeda, Tomohiro

1P-13

Hasegawa, Yusuke

2P-30,

Ikuhara, Yuichi

3P-19

Hashima, Yuki

1P-38

Ikuma, Naohiko

1P-2,

2P-1

Hashimoto, Yoshio

1P-24

Imahori, Hiroshi

2-4,

3-4,

Hashizume, Daisuke

1P-9

Inaba, Masafumi

2-11,

2P-35

Hata, Kenji

1-4,

Inaba, Saori

2P-1

Inose, Tomoko

3-5Inoue, Daishi

1P-9

1P-4,

2P-2

1P-32

3P-34

1P-10, 2P-10,

2P-17
1P-28,

2-10

2P-37,

3P-17

3P-8

Hatakeyama, Kazuto

1P-26,

Hayami, Shinya

2-10Inoue, Taichi

1P-25

Hayashi, Hironobu

3P-38

Inoue, Taiki

1P-14,

2-2,

3P-15,He, Guanchen

1-10,

3P-17,

3P-19,

3P-21

Higo, Yuji

2P-36

Higuchi, Ayaka

1-10,

Hill, Jonathan P.

3P-35
Inoue, Yuta

3P-1

Isaka, Takuya

3P-25

2P-2

Ishiguro, Shunichi

3P-24

Hiraiwa, Atsushi

2-11

Ishii, Nobuhisa

3P-29

Hirano, Atsushi

2-3,

2-5,

Ishii, Rieko

2P-6

Hirano, Masahiro

2P-23,

2P-25

Ishikawa, Yasuaki

1P-38

Hirano, Yu

2P-35

Ishino, Katsuma

3P-5

Hirotani, Jun

1P-17,

Ishizawa, Sachiko

2P-17

Hisakuni, Tomohiko

2P-36

Isobe, Shigehito

2-7Hisashi, Hideyuki

3S-6

Itatani, Jiro

3P-29

Hofmann, Mario

1P-40,

Ito, Masayuki

1P-3

Homma, Tatsuya

1P-4Ito, Takatoshi

3P-1

Honda, Shin-ichi

2P-36

Ito, Yoshikazu

3-3

3P-35

3P-12

2P-39

2P-6

- 162 -

Ivasenko, Oleksandr

3-5

Kiribayashi, Hoshimitsu

1P-18

Iwai, Toshiyuki

3P-1

Kishimoto, Shigeru

2P-14,

Iwasa, Yoshihiro

1P-9

Iwasawa, Tetsuo

3P-1

Iwashita, Kazuki

2P-6

Iwata, Tadao

2P-36

Ko, Jeong Won

3P-3

Iyoda, Masahiko

3P-2

Ko, Weon Bae

3P-3

Izumi, Hirokazu

2P-36

Kobashi, Kazufumi

1-4

Kobayashi, Daiki

2P-13

Kobayashi, Hayato

1P-14

Kobayashi, Keita

1-7

Kobayashi, Shiho

1P-23

Kobayashi, Yu

1P-22,

1P-35, 2P-28,

2P-32,

2P-34,

3P-32
2P-25

3P-13
Kitaura, Ryo

1-3,

Jintoku, Hirokuni

1P-39

1P-17,

1P-20,

3P-5,

3P-20

<J>
Jeon, Il

3P-10, 3P-12,

2P-3

<K>
Kameda, Tomoshi

2P-6

Kochi, Taketo

3P-9

Kanai, Teruto

3P-29

Koh, Shinji

2P-23,

2P-24,

Kaneko, Toshiro

1-5,

Koinuma, Michio

1P-26,

1P-28, 1P-30,

2-8,

2-10

Kokubo, Ken

1P-1,

1P-2

Komori, Fumio

3P-29

Konabe, Satoru

1P-35

2P-18, 3P-22,

3P-33
Kashiwa, Kotaro

3P-21

Kataoka, Yosuke

1P-7,

2P-19

Kataura, Hiromichi

2-3,

2-5,

Kato, Azusa

2P-5

Kono, Junichiro

1S-1,

Kato, Masachika

3P-20

Kozawa, Akinari

2P-15

Kato, Masaru

2-9,

3P-27

Krüger, Peter

3P-35

Kato, Tatsuhisa

1P-5,

2P-5

Kumagai, Ryota

3P-27

Kato, Toshiaki

1-5,

2P-18, 3P-22,

Kumamoto, Akihito

1-12,

3P-33

Kunisada, Yuji

2P-22

Kauppinen, Esko

1P-14

Kurogi, Ruriko

1P-26

Kawai, Hideki

3P-37

Kuwahara, Yuki

3P-11

Kawai, Tsuyoshi

1P-13,

Kawano, Saki

2P-4

Kawano, Yukio

2P-12,

3-3

Laszczyk, Karolina

1-4

Kawarada, Hiroshi

2-11.

2P-35

Li, Chao

3P-33

Kida, Tetsuya

2-10

Li, Juxian

3-3

Kihara, Hideyuki

1P-39

Ling, Xi

2P-33

Kikitsu, Tomoka

1P-9Liu, Zheng

3P-32

Kimura, Hiroe

1P-10

Kinno, Yasuhiro

3P-39

3P-4

3P-14

<L>

- 163 -

1P-31

3P-19

<M>

Miyauchi, Yuhei

1-9,

1P-36, 2P-30,
2P-37, 3P-32,

Maddala, Sai Prakash

1P-4

2P-31,

Maeda, Yutaka

1-2

3P-34

Maekawa, Yuki

1-5

Mizobuchi, Kyohei

2P-25

Magnin, Yann

3P-18

Mizuno, Takumi

3P-1

Maniwa, Yutaka

1P-22,

1P-35, 2P-28,

Mori, Shohei

2P-32

2P-32,

2P-34, 3P-32,

Morimoto, Shingo

1P-24

3P-37

Morimoto, Takahiro

3P-17

Maruyama, Mina

2P-29

Moriwaki, Kazuyuki

3P-1

Maruyama, Shigeo

1-3,

1P-14,

Mouri, Shinichiro

2P-30,

3P-15,

3P-17, 3P-18,

Murakami, Shinichi

2-8

3P-19,

3P-21

Murakoshi, Kei

1P-15,

1P-18,

1P-21, 2P-15,

Murata, Yasujiro

2P-5

Muto, Marika

2-9

Maruyama, Takahiro

2-2,

2P-21

3P-34
3P-27,

3P-28

Masuda, Hideki

2P-35

Matsubara, Manaho

2P-27

<N>

Matsuda, Iwao

3P-29

Nagase, Shigeru

1-2,

2-4

Matsuda, Kazunari

1-9,

1P-36, 2P-30,

Nakagawa, Ayano

1P-5,

3P-5

2P-31,

2P-37,

Nakagawa, Noritoshi

2P-23,

2P-24,

2P-25

1P-4,

2P-2

1P-19,

2P-7,

3P-34

Matsumae, Takashi

1P-33

Nakagawa, Takafumi

2P-3

Matsumoto, Fukashi

3P-1

Nakahara, Hitoshi

3P-6

Matsumoto, Morihiro

3-6

Nakamura, Eiichi

1-12,

Matsumoto, Naoyuki

2P-17

Nakamura, Yasushi

1-13

Matsumoto, Yasumichi

1P-26,

1P-28, 1P-30,

Nakanishi, Terunobu

1P-20

2-8,

2-10

Nakanishi, Waka

2P-2

Matsunaga, Masahiro

1-10,

3P-35

Nakashima, Koji

3P-27

Matsuno, Yutaka

1-6,

1P-29

Nakashima, Naotoshi

1P-11,

Matsuo, Yutaka

1-3,

2P-3,

3P-16

3-8,

3P-2

Nakashima, Yuki

1P-11

Matsuzawa, Yoko

1P-39

Nakayasu, Yuta

3P-24

Minami, Kosuke

2P-2

Naramura, Takuro

2-11

Minami, Shun

1-2

Naritsuka, Shigeya

1P-18,

Minamimoto, Hiro

3P-28

Miyamoto, Yoshiyuki

3-1,

3P-23

Nihey, Fumiyuki

3P-11,

Miyata, Yasumitsu

1S-2,

1P-17, 1P-22,

Niibe, Masahito

2P-36

1P-35,

2P-28, 2P-32,

Nishijima, Satomi

3P-26

2P-34,

3P-32

Nishikawa, Koushi

3P-6

Nishimura, Kanako

3P-16

1P-21, 2P-15,

2P-21- 164 -

3P-36

Nishimura, Tomoaki

1P-24

Nishino, Akane

1-2

Niwase, Keisuke

2P-36

Noda, Suguru

2P-16,

Nonoguchi, Yoshiyuki

1P-13,

Nouchi, Ryo

3-6

Nugraha, Ahmad R.T.

1P-31,

Omachi, Haruka

1P-17,

3P-5,

3P-20,

3P-39
Omori, Kengo

2-7

2P-38

Onitsuka, Hisashi

2P-7

3P-14

Osawa, Toshio

2P-38

Oshima, Azusa

2P-17

Oshima, Shuntaro

2P-8

Oshima, Takumi

1P-2

Otsuka, Keigo

3P-15

Ozono, Keita

1P-19

1P-32,

2P-9<O>
Ochiai, Yuichi

1-10,

3P-35

Oda, Shunri

2P-12,

3-3

Ogata, Chikako

1P-26,

1P-30

Ogata, Hironori

1P-7,

1P-24,<P>
Prassides, Kosmas

3-9

2P-19

Prato, Maurizio

3P-39

Ogawa, Seigo

1P-18

Pu, Jiang

3P-11

Ogawa, Shun

1P-22,

Ogawa, Yu

3P-29

<Q>

Ogumi, Keisuke

2P-3

Qian, Yang

2-2

Ohba, Hironori

1P-16

Qin, Feng

1P-9

Ohfuchi, Mari

3-1

Ohno, Munekazu

1-5

<R>

Ohno, Toshinobu

3P-1

Robertson, John

2-6

Ohno, Yutaka

1P-17,

2P-14, 3P-10,

Rubio, Angel

3P-23

3P-12,

3P-13

2P-4,

2P-28

Ohta, Yutaka

3P-25

<S>

Ohyama, Shinnosuke

2-2

Saida, Takahiro

1P-18,

Okada, Hiroshi

3P-2

Saito, Naoto

3S-7

Okada, Masaru

3P-29

Saito, Riichiro

1-1,

1P-31, 1P-32,

Okada, Susumu

1-8,

1P-6,

2-5,

2P-9,

2P-33

1P-34,

1P-37, 2P-27,

Saito, Susumu

1-11,

2-1,

2P-8

2P-29,

3P-9,

Saito, Takeshi

3P-11

3P-37

Saito, Tetsuki

1P-35,

Okada, Toshihiko

2P-1

Saito, Yahachi

3P-6

Okamoto, Naofumi

1P-38

Sakaguchi, Norihito

2P-22

Okazaki, Kozo

3P-29

Sakaguchi, Takahiro

1P-14

Okazaki, Toshiya

2P-15,

Sakai, Yuji

1P-31

Okochi, Takeshi

1P-14

Sakuraba, Shun

2P-6

Okudaira, Saki

2P-37

Sakurada, Ryuji

1P-35

2P-37,

1P-27,
3P-30,

3P-17- 165 -

2P-15

2P-34

Sakurai, Hidehiro

1P-1,

2P-1

Sugime, Hisashi

2-6,

Sakurai, Shunsuke

1-4,

1P-10

Suko, Hiroki

1P-14

Sandhaya, Koirala

1P-36

Sundaram, Rajyashree

2P-10

Sano, Masahito

1-6,

Suzuki, Daichi

2P-12,

Sasaki, Fusako

3P-11

Suzuki, Daisuke

3P-31

Sasaki, Shogo

2P-28,

2P-32,

Suzuki, Hakuto

3P-29

Sato, Hikaru

1-6,

1P-29

Suzuki, Hiroo

1-5,

3P-22

Sato, Naomichi

2-5

Suzuki, Mitsuaki

1-2,

2-4

Sato, Nozomi

1P-1

Suzuki, Seiya

3-2

Sato, Yusuke

3P-27

Syrgiannis, Zois

3P-39

Sato, Yuta

3P-8

Sato, Yutaka

1P-7,

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Sato, Yu-uya

1-6,

1P-29

Taguchi, Eiji

2P-36

Sekiguchi, Atsuko

1-4,

2P-10

Taguchi, Tomitsugu

1P-16

Shi, Wu

1P-9

Taira, Remi

3P-30

Shibata, Masanobu

2-11

Tajima, Kentaro

3P-25

Shibata, Naoya

1-12

Takabayashi, Yasuhiro

3-9

Shibuta, Yasushi

1-5

Takada, Tomoya

1P-12

Shigekawa, Hidemi

1P-20,

Takagi, Yukai

3P-18

Shih, Ching-Hua

1P-40

Takai, Kazuyuki

3P-25,

Shima, Hiroyuki

1-13

Takano, Yuta

2-4

Shimizu, Hideyuki

3P-2

Takao, Yuko

3P-1

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Takashima, Kengo

1P-35,

Shinohara, Hisanori

1P-5,

1P-17, 1P-20,

Takatsuka, Takayuki

3P-7

3P-5,

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Takehana, Yuya

1-2

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1P-23,

1P-29

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3P-32

2P-32

3P-39

Shintani, Yukihiro

2-11

Shiozawa, Hidetsugu

3-7

Shiraki, Kentaro

2P-6

Takeuchi, Osamu

1P-20,

Shiraki, Tomohiro

2P-7

Takeuchi, Takahiro

2P-32

Shrestha, Lok Kumar

2P-2

Takezaki, Hiroki

2-2

Someya, Takashi

3P-29

Takikawa, Hirofumi

1-13

Sorimachi, Jun-ya

1P-37

Tamura, Naoki

3P-24

Sota, Masaki

3P-21

Tan, Dezhi

1-9

Srinivasan, Sanjay K.

1P-31

Tan, Fu-Wen

3P-12

Suda, Yoshiyuki

1-13

Tanaka, Fumiaki

1-4

Suenaga, Kazutomo

2P-32,

Tanaka, Motomu

1P-4

Suga, Tadatomo

1P-33

Tanaka, Takeshi

2-3,Sugahara, Mitsunari

3P-37

Taniguchi, Takaaki

1P-26

2P-16,

2P-38

3-3

3P-26,

3P-31

2P-26

1P-25, 2P-11,

2P-13

3P-8,

3P-32

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1P-35

2-5,

2P-6

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3P-5

3P-27

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3P-29

Tashima, Keiichiro

3P-29

Watanabe, Kenji

1P-35,

Tashita, Ryo

2-4

Watanabe, Takayuki

1P-10

Tatsumi, Yuki

2P-33

Wato, Yuta

3P-22

Tenne, Reshef

1P-9Wei, Xiaojun

2-3,

Terasawa, Mititaka

2P-36

Wu, Cheng

3P-17

Thendie, Boanerges

1P-17

Tobe, Yoshito

3-5

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Tomai, Takaaki

3P-24

Xiang, Rong

Tonouchi, Noriyuki

3P-11

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1P-19,

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3P-36

Toyoda, Masayuki

2P-8

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Tsuchiya, Bun

2P-20

Yagi, Ichizo

2-9,Tuan Hung, Nguyen

2P-9

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3P-26

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3P-38

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1P-21,

Taniguchi, Takashi

1P-35,

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2P-34

3P-16

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Xu, Bin

2-2,

3P-19,

3P-21

2P-18

1P-15

Yamada, Junya

1-12Ue, Hitoshi

1-13

Yamada, Michio

1-2

Ueda, Naomasa

3P-21

Yamada, Ryo

2P-38

Ueda, Yuki

1P-21,

Yamada, Takeo

1-4,

Uenuma, Mutsunori

1P-38

Yamada, Tetsushi

3P-35

Uji-i, Hiroshi

3-5

Yamagishi, Miho

3P-20

Ukai, Hiroyuki

3P-18

Yamaguchi, Takahisa

1P-5

Ukhtary, M. Shoufie

1P-31,

1P-32

Yamakoshi, Yoko

3S-8

Umeyama, Tomokazu

3-4,

3P-8

Yamamoto, Daichi

1P-21,Uraoka, Yukiharu

1P-38

Yamamoto, Hiroyuki

1P-2

Ushiyama, Takuya

2P-14,

Yamamoto, Shunya

1P-16

Yamamoto, Susumu

3P-29

Yamamoto, Takahiro

1P-35,

Yamamoto, Takashi

3P-29

Yamanaka, Ayaka

1-8,

Yamanaka, Tomoki

1-10

3P-13

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3P-13

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2-3

Yamaoka, Takao

1P-36

Wang, Minjie

1P-31

Yamashina, Tomoki

3P-25

Wang, Xiaofan

1-9,

Yamashita, Ichiro

1P-38

Wang, Zhipeng

1P-24

Yanagi, Kazuhiro

1P-8,

2P-31

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1P-14,

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2P-21

2P-34

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2P-21

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2P-21

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2P-23,

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2P-33

Yasuda, Hidehiro

1-7

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3P-28

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2P-11

Yasuda, Satoshi

1P-15,

2P-24

2-7,

3P-27,

3P-28
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3P-10,

3P-12

Yokokura, Eita

1P-7,

2P-19

Yomogida, Yohei

1P-8,

2-5,

3P-37

Yoshida, Masaro

1P-9

Yoshida, Masaru

1P-39

Yoshida, Shoji

1P-20,

1P-35,

2P-32

Yoshida, Takahiro

2P-20

Yoshikawa, Ryo

3P-18

Yoshimura, Masamichi

3-2

Yoshimura, Shintaro

2P-28

Yoshitake, Haruhiko

1P-24

Yudasaka, Masako

2P-37,

Yuge, Ryota

3P-36

Yumura, Motoo

1P-10

3P-36

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3-9

Zak, Alla

1P-9

Zhang, Hong

3P-23

Zhang, Jin

2S-4

Zhang, Wenjin

3P-34

Zheng, Liu

2P-32

Zhou, Biao

3P-2

Zhou, Ruifeng

3P-28- 168 -

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ᄂᄶд‒ ᩓ൷‒ ⇻⇉∏∞‒ ήᚑ‫ ‒ۥ‬ᚑ‫ٳ˳ ‒∙⇧⇕∕ ‒ۥ‬ᚮૺᕤ‒ ഫᄶⅼብ‒ ⇝∉∙⇽∞‒Ҟ‫ ‒˳ݰ‬ᩓ‫ؕ܇‬Ⴔ‒ ෩୒‒ ᝮ᣿‫ ‒ޓ‬᣿‫ܰ ‒ޓ‬ჽ‒ ⇥⇊∊‒ ႆᣞᓏ᫏‒ ↌↝˂‒ʐ҄‒⇎∄∑⇞∍∙ᙌд‒ ᠾᕤ‒ ⇮⇰∞‒ ∏⇬⇩⇕⇟‒ မ᩿෇ࣱд‒ ⇕∐∞∆‒ ʐ෩‒ ↌↝˂‒

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フロンティアカーボンのフラーレン製品
純度(HPLC面積％、代表値）
内容他

最低数量
（ｇ）
10
2
2
1
1

ST

99
99.5
99.5/ 昇華精製品
99.9/ 昇華精製品
99.9/昇華精製/単結晶品
97

フラーレン C70

SU

98/昇華精製品

0.5

nanom mix

ST

C60,C70, その他高次フラーレンの混合物

50

銘

分子構造

柄
ST
TL
SU
SUH
SC

nanom purple
フラーレン C60

nanom orange

混合フラーレン

nanom spectra[60]PCBM(phenyl C61-butyric acid methyl
ester)

E100

O

99

1

99.5

1

99.9

0.5

99/異性体トータル

0.5

O

E102
E110

(phenyl C71-butyric acid methyl
ester)

E112[70]PCBM※微粒化品（ ST-F）もあります

E100H

nanom spectraOO※位置異性体の混合物

主成分

99.5/異性体トータル※位置異性体の混合物

nanom spectra Q100
nanom spectra Q40 0

2[60]インデン２付加体

0.599/異性体トータル1※位置異性体の混合物

HO

nanom spectra D100

HO

C60OHn n=10を主成分とする混合物(n = ca.10)

1

H

nanom spectra A100

H

水素化フラーレン

n/2

0.5

99

[60]インデン付加体

水酸化フラーレン

1

n/2

C60Hn n=30を主成分とする混合物(n = ca. 30)※銘柄、取扱数量等は予告無く変更する場合がございます。 ※試験研究用途向けです。

当社製品は、下記から購入いただけます。直接お問い合わせください。
・関東化学株式会社 試薬事業本部〒103-0022 東京都中央区日本橋室町2-2-1 TEL:03-6214-1090 FAX:03-3241-1047
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1

第第 51 回フラーレン・ナノチューブ・グラフェン
総合シンポジウム

回 フラーレン・ナノチューブ・グラフェン 総合シンポジウム講演要旨集

51

The 51st Fullerenes-Nanotubes-Graphene General Symposium

講演要旨集
Abstracts

２０１６年９月７日～９日

2016 年 9 月 7 日（水）～ 9 日（金）北海道立道民活動センター かでる 2・7
Hokkaido citizens actives center kaderu 2・7
主催

フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society

共催

日本化学会

The Chemical Society of Japan

協賛

日本物理学会
応用物理学会
高分子学会
電気化学会

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan