ADMETA Plus 2015 Program
16 - 18 September 2015
Rm. 520 Global Convention Plaza, Seoul National University
Seoul, Korea
16th Sep. (Wednesday)
TimeSession

Presenter

Affiliation

Title

Tutorial Session
09:00~10:20

Tutorial 1

Oh Joong Kwon

Incheon National Univ.

Electroplating Fundamentals and Applications

10:30~11:50

Tutorial 2

Han-Bo-Ram Lee

Incheon National Univ.

Atomic Layer Deposition

Lunch

11:50~13:30
13:30~14:50

Tutorial 3

Jin-Goo Park

Hanyang Univ.

Chemical Mechanical Polishing

15:00~16:20

Tutorial 4Sarah Eunkyung Kim

Seoul National Univ. of Sci. & Tech.

3D Integration & Packaging

16:30~17:50

Tutorial 5

Young-Joon Park

Texas Instruments Inc.

Interconnect Reliability

17th Sep. (Thursday)
TimeSession

Presenter

Affiliation

09:15~09:25

Opening

Young-Chang Joo

Seoul National Univ.

Title

09:30~10:15

Keynote 1

Satoshi Tanimoto

Nissan Arc

10:15~11:00

Keynote 2

Seok-Hee Lee

SK Hynix

Welcome remarks

Keynote session (Chair: Prof. Young-chang Joo)
The Coming SiC Age: Expectations and Challenges for Achieving
High-density Power Conversion Systems
TBD
Break

11:00~11:15

Session 1: Advanced barrier technologies for metallization (Chair: Prof. Hyungjun Kim)
11:15~11:45

Invited 1

Xin-Ping Qu

Fudan Univ.

11:45~12:00

Oral 1

Hiroyuki Koide

Tohoku university

Novel Alloy Diffusion Barrier for Advanced Copper Interconnect

12:00~12:15

Oral 2

Taewoong Kim

University of Tokyo

12:15~12:30

Oral 3Hyun-Jung Lee

Yeungnam University

The effect of the Mn penetration in porous SiOCH for CVD-Mn
diffusion barrier
PVD-Co(W) single barrier/liner for highly reliable ULSI
Cu interconnects
Analysis of ALD Ru-Mn as a Cu direct plateable diffusion barrier
with self-forming barrier processLunch

12:30~14:00

Session 2: Thin film deposition using ALD and CVD (Chair: Prof. Soo-hyun Kim)
Atomic Layer Deposition of Transition Metals for Interconnect

14:00~14:30

Invited 2

Hyungjun Kim

Yonsei University

14:30~14:45

Oral 1

Yasuhiko Saito

Tokyo Electron Miyagi Limited

14:45~15:00

Oral 2

Changhee Ko

Air Liquide Laboratories

Synthesis and evaluation of Cobalt precursor for pure Cobalt film

15:00~15:15

Oral 3

Il-Kwon Oh

Yonsei University

Lowering Plasma Damage in PE-ALD by using VHF Plasma Source

TechnologyA Robust Silicon Nitride Capping Layer Deposition by Microwave PlasmaChemical Vapor Deposition on the Spin Transfer Torque Magnetoresistive
RAMBreak

15:15~15:30

Session 3: Materials and processes for advanced packaging I (Chair: Young-bae Park)
15:30~16:00

Invited 3

Chee Lip Gan

Nanyang Tech. Univ.

16:00~16:15

Oral 1

Bum-Geun Park

Sungkyunkwan Univ.

16:15~16:30

Oral 2

Jee-Hwan Bae

Sungkyunkwan Univ.

Copper Nanoparticles Enabled Low Temperature BondedInterconnections
Highly Flexible Screen-Printed Circuit with Hybrid Ag Flake Paste
Characterization of interfacial reaction layers between Zn-Al-Mg solder alloy
and Cu substrate

16:30~18:00

Poster Presenstation

18:00~

Dinner

18th Sep. (Friday)
TimeSession

Presenter

Affiliation

Title

Session 4: Materials and processes for advanced packaging II (Chair: Prof. Sung-Dong Kim)
09:30~10:00

Invited 4

Tae-Kyu Lee

Cisco Syatems Inc.

10:00~10:15

Oral 1

Takayuki Ohba

Tokyo Institute of Technology

10:15~10:30

Oral 2

Aki Dote

Fujitsu Laboratories Ltd.

10:30~10:45

Oral 3

Kwang-Seong Choi

ETRI

10:45~11:00

Oral 4Ji-Won Park

Seoul National Univ.

Link Between Degradation Mechanisms and Microstructure
Signatures in Solder Joint Interconnects
BEOL Friendly Bumpless Interconnects Technology for
3D-3D Integration
Deformation of Thin and Large Si Die with Nonuniform RDL Pattern
The Effects of Si Resistivity and TSV liners of Si Interposers on RF
Performance for RF 3D Module
Smart Solution of Adhesive for Temporary Bonding De-bondingBreak

11:00~11:15

Session 5: Reliability — materials and testing issues I (Chair: Hoo-Jeong Lee)
Electromigration in Strapped Metal Layers with Large Dimensions for Lateral

11:15~11:45

Invited 5

Young-Joon Park

Texas Instruments Inc.

11:45~12:00

Oral 1

Shinji Yokogawa

Polytechnic University of JapanA simulation study of impacts of global and local space variations

12:00~12:15

Oral 2

Byoung-Joon Kim

KIMS

Mechanical reliability of metal interconnect on polymer substrate

12:15~12:30

Oral 3

Kyung-Tae Jang

Seoul National Univ.

Power Device Applications

Current induced microstructure evolution and electrical reliabilityof Ag interconnects based on nanometer sized particles

Lunch

12:30~14:00

Session 6: Reliability — materials and testing issues II (Chair: Dr. Byoung-Joon Kim)
14:00~14:30

Invited 6

Manabu Tsujimura

Ebara Corporation

14:30~14:45

Oral 1

Jung-Kwon YangSeoul National Univ.

14:45~15:00

Oral 2

Yuya Otsuka

Hitachi Chemical Co., Ltd.

15:00~15:15

Oral 3Eiichi Kondoh

University of Yamanashi

The Way to Zero’s –The future of Semiconductor Device and CMPTechnologies
Limited Line Width and Bending Frequency Effects on the Fatigue
Lifetime of Cu Interconnects
Electrochemical Impedance Spectroscopy on Galvanic Corrosion between Co
Liner and Cu Interconnect
In-situ ellipsometry of Cu surfaces immersed in BTA-H2O2 solutions

Break

15:15~15:30

Session 7: Emerging materials and processes (Chair: Prof. Oh-Joong Kwon)
15:30~16:00

Invited 7

Sintaro Sato

Fujitsu Laboratories Ltd.

16:00~16:15

Oral 1

Wei FengIndustrial Science and Technology

16:15~16:30

Oral 2

Masayuki Katagiri

Toshiba Corporation

16:30~16:45

Oral 3

Md. Sahab Uddin

Shibaura Institute of Technology

16:45~17:00

Oral 4

Xun GU

SMIC

17:00~17:15

Oral 5

Yongjin Kim

KIMM

17:15~17:30

Oral 6

Byungil Hwang

KAIST

National Institute of Advanced(AIST)

Nanocarbon Interconnects with Resistivity and Reliability Better than Cu
Investigation of Transport Properties of Carbon Nanotube by Nanoprober
Resistivity Reduction of Multilayer Graphene Interconnects Prepared by LowTemperature Chemical Vapor Deposition
Improvement of multilayer graphene crystallinity by solid phase precipitation
applying current stress during annealing
RC Delay Reduction by using a Barrier Polymer Layer
for Advanced Cu/ULK Interconncets
Experimental Failure Analysis of Nano-scale Thin Film Structures Used for
Organic Electronic Device
Study on the Bending Fatigue Behavior of GO coated Ag Nanowire
Networks