第回 フ ラ ー レ ン・ナノ チュー ブ・グ ラ フェン 総 合 シンポ ジウ ム 講 演 要 旨 集

55
44

平成

年３月 日〜 日

30
25

９

11

13

F NTG

第 55 回フラーレン・ナノチューブ・グラフェン
総合シンポジウム

Research Society

The 55th Fullerenes-Nanotubes-Graphene General Symposium

講演要旨集
Abstracts2018 年 9 月 11 日（火） ～ 13 日（木）東北大学理学研究科 青葉サイエンスホール
Aoba Science Hall, Graduate School of Science, Tohoku University
主催 フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society
共催 ・ 後援
日本化学会
The Chemical Society of Japan
東北大学理学研究科 Graduate School of Science, Tohoku University
協賛
日本物理学会
応用物理学会
高分子学会
電気化学会

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan高感度
高ダイナミックレンジ

高 感 度 近 赤 外 線 ２ 次 元 I n G a A s カメラ

高繰り返し

NIRvana :640
TM

低暗電流ノイズ（電子冷却：-80℃、液体窒素：-190℃）
110fps（ビデオレート以上）
標準GigEインターフェースで50ｍまで延長可
空冷ファンと水冷を切替可能
アプリケーション例
・フォトニック結晶PLイメージング及びスペクトル・一重項酸素イメージング及びスペクトル・太陽電池PLイメージング及びスペクトル・天体観測微弱光イメージング
・食品断面イメージング
・In-Vivoイメージング など

仕様
モデル

センサー

NIRvana:640ST

冷却温度

ダークチャージ

読み出しノイズダイナミックレンジ
フレームレート

インターフェース
ソフトウェアNIRvana:640LN

20μm x 20μm

素子サイズ
波長範囲

NIRvana:640
640 x 512 x InGaAs
0.9 〜 1.7 μm
-80℃

-60℃

1500 e-/p/sec<120 e-rms

300 e-/p/sec

16 Bit (>15Bit@1 素子 )110 fps@10MHz

Gig E

-190℃

<8 e-/p/sec
15 e-rms

2.77 fps@250KHz

LightField, SITK-LabVIEW, WinX32

www.pi-j.jp

Abstract of
The 55 Fullerenes-Nanotubes-Graphene General Symposiumth

Sponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of Japan: Graduate School of Science, Tohoku University
Supported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

Date : September 11th (Tue.) –13th (Thu.), 2018
Place : Aoba Science Hall, Science Complex C(H-04),

Graduate School of Science, Tohoku University

6-3 Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan

Presentation Time : Special Lecture (25 min presentation + 5min discussion)Award Nominee Lecture (10 min presentation + 10 min discussion)
General Lecture (10 min presentation + 5min discussion)
Poster Preview (1 min presentation without discussion)

第 55 回フラーレン･ナノチューブ･グラフェン総合シンポジウム
講演要旨集
主催 : フラーレン･ナノチューブ･グラフェン学会
共催･後援 : 日本化学会: 東北大学理学研究科
協賛 : 日本物理学会、応用物理学会、高分子学会、電気化学会
日時 : 平成 30 年 9 月 11 日(火)～9 月 13 日(木)場所 : 東北大学 理学研究科 合同 C 棟（H-04）青葉サイエンスホール〒980-8578 仙台市青葉区荒巻字青葉 6-3
発表時間 : 特別講演（発表 25 分 + 質疑応答 5 分）
受賞対象者講演（発表 10 分 + 質疑応答 10 分）
一般講演（発表 10 分 + 質疑応答 5 分）
ポスタープレビュー（発表 1 分・質疑応答 なし）

展示団体御芳名 (五十音順、 敬称略）
AIST ナノチューブ実用化研究センター

s a n t e c (株）(株） シンキー(株） セントラル科学貿易（株） 日本レーザー（株） 日本ローパー(株） 名城ナノカーボン

広告掲載団体御芳名 (五十音順、 敬称略）
エクセルソフト (株)工機ホールディングス (株)(株） セントラル科学貿易
ソーラボジャパン （株）
日本電子 （株）（株） 日本レーザー(株） 日本ローパー（株） 堀場製作所

Contents
Time Table ・・・・・・・・・・・・・・・・・・ i
Chairperson ・・・・・・・・・・・・・・・・・iii
ProgramJapanese ・・・・・・・・・・・・ iv
English ・・・・・・・・・・・・ xix
Abstracts
Special Lecture ・・・・・・・・・・ 1
General Lecture ・・・・・・・・・ 11
Poster Preview ・・・・・・・・・・41
Author Index ・・・・・・・・・・・・・・・・149

目次
早見表 ・・・・・・・・・・・・・・・・・・・ i
座長一覧・・・・・・・・・・・・・・・・・・・iii
プログラム 和文・・・・・・・・・・・・・・・ iv
英文・・・・・・・・・・・・・・ xix
講演予稿
特別講演・・・・・・・・・・・・・ 1
一般講演・・・・・・・・・・・・・11
ポスター発表・・・・・・・・・・・41
発表索引・・・・・・・・・・・・・・・・・・ 149

プログラム早見表
９月１１日 （火）受付開始 8:30～
開会挨拶 8:55～
9:00 一般講演 2件 9:00-9:30

９月１２日 （水）9:00（バイオ ・ ナノ環境と安全評価）

9:30

特別講演 （湯田坂 雅子）
9:30-10:00
10:00 一般講演 2件 10:00-10:30

受付開始 8:45～
講演開始 9:00～
大澤賞・飯島賞
受賞対象者講演 4件
9:00-10:25

９月１３日 （木）
受付開始 8:45～
講演開始 9:00～
9:00 一般講演 2件 9:00-9:30（ナノチューブの応用）

9:30

特別講演 （大野 雄高）
9:30-10:00
10:00 一般講演 2件 10:00-10:30(ナノチューブの応用 ・ 原子層）

10:30
10:45

休憩 10:30-10:45
特別講演 （千賀 亮典）
10:45-11:15
11:15 一般講演 1件 11:15-11:30（ナノチューブの応用 ・ ナノチューブの物性）

10:25
10:45

休憩 10:25-10:45
特別講演 （田中 丈士）
10:45-11:15
11:15 一般講演 1件 11:15-11:30（グラフェンの物性）

11:30

12:15

13:30

15:15
15:45

16:30
16:45

ポスタープレビュー( 1P-1 ～ 1P-36 )11:30-12:15
昼食(幹事会）
12:15-13:30

ポスターセッション

10:30
10:45

休憩 10:30-10:45
特別講演 （河野 行雄）
10:45-11:15
11:15 一般講演 1件 11:15-11:30（ナノチューブの生成と精製）

11:30

12:15

13:30

ポスタープレビュー( 2P-1 ～ 2P-36 )11:30-12:15
昼食
12:15-13:30

ポスターセッション（ナノチューブの物性）

11:30

12:15

13:30

ポスタープレビュー( 3P-1 ～ 3P-36 )11:30-12:15
昼食
12:15-13:30

ポスターセッション

13:30-14:00 若手奨励賞候補審査優先時間

13:30-14:00 若手奨励賞候補審査優先時間

13:30-14:00 若手奨励賞候補審査優先時間【多目的室，Ｃ棟２Ｆロビー】
13:30-15:15【多目的室，Ｃ棟２Ｆロビー】
13:30-15:15【多目的室，Ｃ棟２Ｆロビー】
13:30-15:15

特別講演 (野々口 斐之)
15:15-15:45
一般講演 3件

15:15
15:30

(ナノチューブの物性 ・ グラフェンの物性 ・ 原子層） 15:45-16:30

16:00

休憩 16:30-16:45
一般講演 4件

16:30
16:45

(原子層 ・ グラフェンの応用 ・グラフェンの物性 ・ その他）

17:15

16:45-17:45
17:45
展示企業との交流会【合同Ｂ棟エントランス２Ｆ】
17:45-19:00

授賞式

15:15-15:30
総会
15:30-16:00
特別講演 (平原 佳織)
16:00-16:30
休憩 16:30-16:45
特別講演 （井上 翼）
16:45-17:15
一般講演 2件（フラーレン） 17:15-17:45

15:15
15:45

特別講演 (大淵 真理)
15:15-15:45
一般講演 5件(原子層 ・ ナノチューブの生成と精製 ・ グラフェンの応用）

15:45-17:00
17:00

17:45
移動
18:30

19:00

懇親会
【ホテルレオﾊﾟﾚｽ仙台
Ｂ１Ｆイベントホール】
18:30-20:30

講演会場 青葉サイエンスホール
特別講演 発表25分・質疑5分
賞対象者講演 発表10分・質疑10分
一般講演 発表10分・質疑5分
ﾎﾟｽﾀｰﾌﾟﾚﾋﾞｭｰ 発表1分・質疑なし

20:30

i

Time table
September 11 (Tue.)

September 12 (Wed.)

September 13 (Thu.)

Registration begins at 8:30
Opening greeting at 8:55
9:00 General Lectures [2] 9:00-9:30

Registration begins at 8:45
Lectures begin at 9:00
9:00 Lectures of Osawa Award
and Iijima Award Nominees
9:00-10:25

Registration begins at 8:45
Lectures begin at 9:00
9:00 General Lectures [2] 9:00-9:30(Bio ・ Environmental/Safety characterization of nanomaterials)

9:30 Special Lecture 9:30-10:00( Masako Yudasaka )10:00 General Lectures [2]10:00-10:30（Applications of nanotubes)

9:30 Special Lecture 9:30-10:00( Yutaka Ohno )10:00 General Lectures [2]10:00-10:30(Applications of nanotubes ・ Atomic Layers)

10:30 Coffee Break 10:30-10:45
10:45 Special Lecture 10:45-11:15( Ryosuke Senga )11:15 General Lectures [1]11:15-11:30（Applications of nanotubes ・ Properties of nanotubes)

10:25 Coffee Break 10:25-10:45
10:45 Special Lecture 10:45-11:15( Takeshi Tanaka )11:15 General Lectures [1]11:15-11:30（Properties of graphene）

11:30

12:15

13:30

Poster Preview( 1P-1 through 1P-36 )11:30-12:15
Lunch(Administrative meeting)
12:15-13:30

Poster Session

12:15

13:30

Poster Preview( 2P-1 through 2P-36 )11:30-12:15
Lunch
12:15-13:30

Poster Session

11:30

12:15

13:30

Poster Preview( 3P-1 through 3P-36 )11:30-12:15
Lunch
12:15-13:30

Poster Session

During 13:30-14:00, please give

During 13:30-14:00, please givepriority to selection of candidates

priority to selection of candidates

priority to selection of candidates

for Young Scientist Poster Award

for Young Scientist Poster Award

for Young Scientist Poster Award(Properties of nanotubes ・ Propertiesof graphene ・ Atomic Layers）

Coffee Break 16:30-16:45
General Lectures [4](Atomic Layers ・ Applications ofgraphene ・ Properties of graphene

16:45-17:45
Exchange meetingwith corporate exhibitors
・ Other topics）

17:45（Properties of nanotubes）（Formation and purification of nanotubes)

11:30

During 13:30-14:00, please give

【 Event Space 】【 Lobby on 2F, Building C 】
13:30-15:15
15:15 Special Lecture 15:15-15:45( Yoshiyuki Nonoguchi )15:45 General Lectures [3] 15:45-16:30

16:30
16:45

10:30 Coffee Break 10:30-10:45
10:45 Special Lecture 10:45-11:15( Yukio Kawano )11:15 General Lectures [1]11:15-11:30【 Event Space 】【 Lobby on 2F, Building C 】
13:30-15:15
15:15 Awards Ceremony 15:15-15:30
15:30
General Meeting
15:30-16:00
16:00 Special Lecture 16:00-16:30( Kaori Hirahara )16:30 Coffee Break 16:30-16:45
16:45 Special Lecture 16:45-17:15( Yoku Inoue )17:15
General Lectures [2]（Fullerenes） 17:15-17:45
17:45
Moving【 Event Space 】【 Lobby on 2F, Building C 】
13:30-15:15
15:15 Special Lecture 15:15-15:45( Mari Ohfuchi )15:45
General Lectures [5](Atomic Layers ・ Formationand purification of nanotubes
・ Applications of graphene)

15:45-17:00
17:00【 Entrance on 2F, Building B 】

17:45-19:00

18:30

19:00

20:30

Banquet【 B1F Event Hall,
Hotel Leopalace Sendai 】
18:30-20:30

Place : Aoba Science Hall
Special Lecture : 25 min (Presentation) + 5 min (Discussion)Award Nominee Lecture : 10 min (Presentation) + 10 min (Discussion)
General Lecture : 10 min (Presentation) + 5 min (Discussion)
Poster Preview : 1 min (Presentation)ii

座長一覧 (Chairpersons)
9月11日 (火)
セッション
一般講演
特別講演(湯田坂 雅子）
一般講演
特別講演(千賀 亮典）
一般講演
ポスタープレビュー時
間
9:00 ～ 9:30
9:30 ～ 10:00
10:00 ～ 10:30
10:45 ～ 11:15
11:15 ～ 11:30
11:30～ 12:15

特別講演(野々口 斐之）
一般講演
一般講演

15:15 ～ 15:45
15:45 ～ 16:30
16:45 ～ 17:45

9月12日 (水)セッション
一般講演(受賞対象者）
特別講演(田中 丈士）
一般講演
ポスタープレビュー時
間
9:00 ～ 10:25
10:45 ～11:15
11:15 ～11:30
11:30 ～ 12:15

特別講演(平原 佳織）
特別講演(井上 翼）
一般講演

16:00 ～ 16:30
16:45 ～ 17:15
17:15 ～ 17:45

9月13日 (木)
セッション
一般講演
特別講演(大野 雄高）
一般講演
特別講演(河野 行雄）
一般講演
ポスタープレビュー時
間
9:00 ～ 9:30
9:30 ～ 10:00
10:00 ～ 10:30
10:45 ～ 11:15
11:15 ～ 11:30
11:30 ～ 12:15

特別講演(大淵 真理）
一般講演

15:15 ～ 15:45
15:45 ～ 17:00

(敬称略）

iii

座
長
田中 丈士

片浦 弘道
中島 秀朗
西原 大志
梅山 有和
野田 優

座
長
斎藤 晋
北浦 良
田島 奈穂子IL JEON
大野 雄高
岡崎 俊也

座
長
加藤 俊顕

加藤 雄一郎内田 勇気
Feng Yang岡田 晋

９月１１日 （火）特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
一般講演 ( 9:00-9:30 )バイオ ・ ナノ環境と安全評価
1-1

カーボンナノチューブによるタンパク質の酸化反応における触媒由来金属の効果11* 平野 篤, 和田 百代, 田中 丈士, 片浦 弘道
1-2

次亜塩素酸化合物により産業廃水中のナノカーボン材料の完全分解

12* 張 民芳, 楊 梅, 中島 秀朗, 湯田坂 雅子, 飯島 澄男, 岡崎 俊也

特別講演 ( 9:30-10:00 )1S-1

カーボンナノチューブによる褐色脂肪組織の近赤外造影

1* 湯田坂 雅子

一般講演 ( 10:00-10:30 )ナノチューブの応用 ・ 原子層
1-3Brain Tissue Compatible Neural Probes Made from High Aspect Ratio (60:1) Free-Standing
Carbon Nanotube Microelectrode Arrays

13* 陳 国海, 二葉 ドン, Robert C. Davis
1-4

遷移金属ジカルコゲニド-フラーレンナノハイブリッドの半導体電極上への形成とその光物性

14* 梅山 有和, 白 鎭碩, 今堀 博＞＞＞＞＞＞＞ 休憩 ( 10:30-10:45 ) ＜＜＜＜＜＜＜特別講演 ( 10:45-11:15 )1S-2

最新STEM-EELS技術を用いた低次元材料評価

2* 千賀 亮典

一般講演 ( 11:15-11:30 )グラフェンの物性
1-5Observation of Edge States of Graphene by FEM and FIM

15* 齋藤 弥八, 渡邉 雄大, 星野 徹, 中原 仁

ポスタープレビュー ( 11:30-12:15 )若手奨励賞候補（☆） 若手奨励賞候補

1P-1☆

Electronic and vibrational properties of boron-doped armchair graphene nanoribbons

1P-2☆

グラフェンナノリボン量子デバイスの高効率作製41* Md Shafiqul Islam, Nguyen Tuan Hung, Ahmad Ridwan Tresna Nugraha, Riichiro Saito* 大北 若奈, 鈴木 弘朗, 金子 俊郎, 加藤 俊顕

iv

42

９月１１日 （火）
1P-3
☆

1P-4
☆

Epitaxial growth of large monolayer h-BN and its application to gas barrier layer* Alexandre Budiman Taslim, Hideaki Nakajima, Yung-Chang Lin, Yuki Uchida,
Kenji Kawahara, Takahiro Morimoto, Toshiya Okazaki, Kazu Suenaga, Hiroki Hibino,
Hiroki Ago
ナノ電気機械共振器におけるファンデルワールス接合を用いた共振周波数シフトの温度依
存性の低減

Development of fabrication method for high quality hBN-encapsulated TMD device

1P-6☆

Ni-Al-Oナノパウダーを用いた短径・高結晶性単層カーボンナノチューブの合成

1P-7☆

Carrier density control of SWCNTs for electric power generation

1P-8☆

Triboelectric generator with carbon nanotube thin film for wearable electronics

1P-9☆

メタ位連結ビスアリールジアゾニウム塩で修飾した単層カーボンナノチューブの発光特性

1P-10

溶媒環境の変化に応じた局所化学修飾単層カーボンナノチューブのフォトルミネッセンス特
性

1P-11
☆

44

* 井上 太一, 望月 裕太, 竹井 邦晴, 有江 隆之, 秋田 成司

1P-5
☆

☆

43

45

* 堀田 貴都, 上野 啓司, 渡邊 賢司, 谷口 尚, 篠原 久典, 北浦 良
46

* 陳 博志, 佐藤 俊裕, 杉目 恒志, テメシェ エレニ, レイン M リチャード, 野田 優
47

* Guowei Wang, Takeshi Tanaka, Atsushi Hirano, Hiromichi Kataura
48* 松永 正広, 廣谷 潤, 岸本 茂, 大野 雄高
49* 余 博達, 白木 智丈, 藤ヶ谷 剛彦
50* 新留 嘉彬, 白木 智丈, 藤ヶ谷 剛彦
カーボンナノチューブの内部空間を利用したシェブレル相Mo6Te6ナノワイヤーの精密合成

51* 永田 雅貴, 中西 勇介, Shivani Shukla, Zheng Liu, Yung-Chang Lin, 末永 和知,
篠原 久典

フラーレンの化学
1P-12Basic Physico-Chemical Properties of C 2V-Symmetrical Octasubstituted Fullerene
Derivatives

52* Yue Ma, Hiroshi Ueno, Hiroshi Okada, Kouya Uchiyama, Hiroshi Moriyama,
Yutaka Matsuo

ナノチューブの物性
1P-13

時間領域サーモリフレクタンス法を用いた単層カーボンナノチューブ薄膜の熱物性評価

53* 松尾 博之, 蓬田 陽平, 八木 貴志, 柳 和宏
1P-14

局所化学修飾サイトでの化学反応を利用した単層カーボンナノチューブの近赤外発光変調* 白木 智丈, 志賀 為仁, 中嶋 直敏, 藤ヶ谷 剛彦

v54

９月１１日 （火）1P-15Theory of circular dichroism in single wall carbon nanotubes including depolarization effect55* 岩崎 佑哉, 齋藤 理一郎
1P-16

Free-Standing Single-Walled Carbon Nanotube Thin Films Fabricated by Wet Process withnarrow bundle thickness distribution

56* 加藤 雄一, 関口 貴子, 小橋 和文, 山田 健郎, 畠 賢治

ナノチューブの応用
1P-17

光反応性シランカップリング剤による多層カーボンナノチューブの化学修飾：高密着性表面
コーティングへの応用

57* 高田 知哉, 高桑 征柊, 北村 悠一郎
1P-18

Determination of association constants of pyrene- and porphyrin-based nanotweezers andnanocalipers with SWNTs

58* Alejandro López-Moreno, Naoki Komatsu

ナノチューブの生成と精製
1P-19

Chemical reaction analysis of cobalt oxide clusters with ethanol by FT-ICR mass
spectrometer59* Ryohei Yamada, Kaoru Hisama, Ken Mizutani, Shohei Chiashi, Shigeo Maruyama
1P-20

Fractal analysis of self-organized carbon nanotube forest structure60* Adam Pander, Takatsugu Onishi, Fumiya Nagamine, Sachio Hayashi, Akimitsu Hatta,
Hiroshi Furuta
1P-21

Effects of catalysts and growth conditions on growth process of individual SWNTs studied bydigital isotope labeling61* 山元 隼, 大塚 慶吾, 小矢野 文章, 井ノ上 泰輝, 項 栄, 千足 昇平, 丸山 茂夫

内包ナノチューブ
1P-22

Local structure and properties of polycyclic aromatic hydrocarbon molecule encapsulated insingle-walled carbon nanotubes studied by molecular dynamics simulations Ⅲ

62* Ryo Nagai, Yosuke Kataoka, Hironori Ogata

グラフェン生成1P-23

Analysis of graphene-h-BN heterostructure growth mechanism from ethanol and ammonia
borane63* Hayato Arai, Naomasa Ueda, Daisuke Ito, Taiki Inoue, Rong Xiang, Shohei Chiashi,
Shigeo Maruyama

グラフェンの応用
1P-24

機械的にカップリングされたドラム型グラフェン機械共振器* 赤澤 慶祐, 望月 裕太, 井上 太一, 吉川 大貴, 竹井 邦晴, 有江 隆之, 秋田 成司

vi64９月１１日 （火）1P-25

量子ドットを搭載したグラフェン機械共振器

65* 堀 雅司, 望月 裕太, 井上 太一, 吉川 大貴, 竹井 邦晴, 有江 隆之, 秋田 成司
1P-26

単一酸化グラフェン片の還元反応：トワイライト蛍光顕微鏡観察による速度論的考察

66* 金澤 克樹, 佐野 正人

グラフェンの物性
1P-27

多環芳香族炭化水素–ポルフィリン連結系の合成と光物性67* 山田 浩貴, 花岡 拓磨, 梅山 有和, Jaehong Park, 今堀 博
1P-28

Moiré superlattices of graphene on Cu (111)68* 小川 友以, 谷保 芳孝

原子層
1P-29

Site-dependence of relationships between photoluminescence and applied electric field inmonolayer and bilayer molybdenum disulfide

69* Junji Nozaki, Hiroyuki Nishidome, Mina Maruyama, Susumu Okada, Satoshi Kusaba,
Koichiro Tanaka, Keiji Ueno, Yohei Yomogida, Kazuhiro Yanagi
1P-30

MoS2へのヒドラジン分子吸着における電子ドープとホールドープの競合

70* 児玉 尚子, 石黒 康志, 高井 和之
1P-31

W18O49ナノワイヤから得られたWS2ナノチューブのキャリア輸送特性

71* 蓬田 陽平, 柳 和宏
1P-32

劈開した多層MoS2結晶への電界誘起カリウムインターカレーション72* 岡田 遼太朗, 蓬田 陽平, 柳 和宏
1P-33

Photoluminescence weakening and overlayer deposition of WS2 induced by van der Waals
interaction73* Hyun Goo Ji, Adha Sukma Aji, Kazunari Matsuda, Hiroki Ago
1P-34

Edge controllable growth of hexagonal boron nitride crystals by atmospheric pressurechemical vapor deposition74* Kamal Prasad Sharma, Aliza Khaniya Sharma, Golap Kalita, Masaki Tanemura,
Takahiro Maruyama

ナノ炭素粒子1P-35

Electronic structure of thin films of hydrocarbon molecules under an external electric field75* 松原 愛帆, 岡田 晋

バイオ
1P-36

Direct Exfoliation of Graphene and h-BN with Various Photosensitizers in Water Aiming at
Cancer Phototherapy* Ahmad Tayyebi, Naoko Ogino, Naoki Komatsu

vii

76

９月１１日 （火）＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:15 )13:30-14:00 若手奨励賞候補審査優先時間
特別講演 ( 15:15-15:45 )1S-3

カーボンナノチューブの超分子ドーピング3* 野々口 斐之一般講演 ( 15:45-16:30 )ナノチューブの物性 ・ グラフェンの物性 ・ 原子層
1-6

湿式紡糸によって形成された単層カーボンナノチューブ繊維の電気的および機械的特性におよぼす有効長および密度依存性

16* 田島 奈穂子, 渡邉 敬之, 森本 崇宏, 小橋 和文, 向 健, 安積 欣志, 岡崎 俊也
1-7

自己組織化単分子膜による基板表面修飾を用いたグラフェン化学修飾の制御

17

池田 京一郎, * 野内 亮
1-8

Mesoscopic Thermoelectric Measurements of 2D Metal-Organic Framework

18* Ryuichi Tsuchikawa, Neda Lotfizadeh, Shuwan Liu, Nabajit Lahiri, Mackenzie Lach,
Celine Slam, Janis Louie, Vikram Deshpande＞＞＞＞＞＞＞ 休憩 ( 16:30-16:45 ) ＜＜＜＜＜＜＜一般講演 ( 16:45-17:45 )原子層 ・ グラフェンの応用 ・ グラフェンの物性 ・ その他
1-9

金ドット核形成制御によるWS2 結晶成長のその場観測19* 李 超, 亀山 智矢, 金子 俊郎, 加藤 俊顕
1-10

Extraordinarily stable supercapacitor electrodes with three-dimensional edge-free graphene
walls

20

* Keita Nomura, Hirotomo Nishihara, Tomoya Shimura, Toshihiro Asada,
Naoya Kobayashi, Takashi Kyotani
1-11

Geometric and electronic structures of three-dimensional porous carbon networks

21* 藤井 康丸, 丸山 実那, 岡田 晋
1-12

イオントラップ気相移動度複合測定システムの開発

星野 裕大, 寺田 夏樹, 内山 史章, 宮本 莉央奈, * 菅井 俊樹

展示企業との交流会 ( 17:45-19:00 )

viii

22

９月１２日 （水）特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
大澤賞・飯島賞受賞対象者講演
発表 １０分 ・ 質疑応答 １０分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
一般講演 ( 9:00-10:25 )大澤賞・飯島賞受賞対象者講演
2-1

Ni-Fe合金を用いた多層h-BNの成長制御とその成長メカニズム23* 内田 勇気, 仲村渠 翔, 河原 憲治, 山崎 重人, 光原 昌寿, 吾郷 浩樹
2-2

Visualization of local defects affecting electrical transport properties of large area graphenefilms via lock-in thermography24* 中島 秀朗, 森本 崇宏, 生田 美植, 沖川 侑揮, 山田 貴壽, 河原 憲治, 吾郷 浩樹,
岡崎 俊也
2-3

In Situ Study on Catalysts for Controlled Growth of Carbon Nanotubes

25* Feng Yang, Yan Li
2-4

Narrow-band thermal exciton radiation in single-walled carbon nanotubes

26* Taishi Nishihara, Akira Takakura, Yuhei Miyauchi, Kenichiro Itami＞＞＞＞＞＞＞ 休憩 ( 10:25-10:45 ) ＜＜＜＜＜＜＜特別講演 ( 10:45-11:15 )2S-4

単層カーボンナノチューブのゲルカラムクロマトグラフィーによる分離とその応用

4* 田中 丈士

一般講演 ( 11:15-11:30 )ナノチューブの生成と精製
2-5繰り返し分散法によるSWCNTの低欠陥分散27* 片浦 弘道, 都築 真由美, 久保田 真理子, 杉田 知子, 王 国偉, 田中 丈士

ポスタープレビュー ( 11:30-12:15 )若手奨励賞候補
2P-1
☆

2P-2
☆

（☆） 若手奨励賞候補

General Method for the Synthesis of Transition-metal Dichalcogenide Nanoribbons Inside
Carbon Nanotubes

77* Motoki Aizaki, Ellne Park, Zheng Liu, Kazu Suenaga, Yusuke Nakanishi,
Hisanori Shinohara
Morphology-dependent Thermal Transport of Single-walled Carbon Nanotube Films* 北野 拓也, 河合 壯, 野々口 斐之ix78

９月１２日 （水）2P-3Tuning the electronic properties of single-walled carbon nanotubes by defluorinationassisted nitrogen doping and defect formation for efficient oxygen reduction electrocatalysis☆

* Koji Yokoyama, Yoshinori Sato, Masashi Yamamoto, Tetsuo Nishida, Kenichi Motomiya,
Kazuyuki Tohji, Yoshinori Sato

2P-4☆

Local strain control for realization of low-voltage operable, highly-stretchable carbon
nanotube thin-film transistors

強固な筒状ホスト内での球状回転子の歯止めのない固体内慣性回転

2P-6☆

Co-Al-O触媒の還元-CVD-酸化処理による垂直配向CNTの繰り返し合成

2P-7

Performance improvement of transparent solar cell using few-layered transition metal
dichalcogenide by Schottky barrier control

2P-8
☆

80

* 西尾 祐哉, 廣谷 潤, 岸本 茂, 大野 雄高

2P-5
☆

☆

79

81

* 松野 太輔, 中井 祐介, 佐藤 宗太, 真庭 豊, 磯部 寛之
82* 佐藤 俊裕, 杉目 恒志, レイン M・リチャード, 野田 優
83

* 山口 慶樹, 大北 若奈, 李 超, 金子 俊郎, 加藤 俊顕
Universality in Transition Metal Dichalcogenide Light-Emitting Devices

84* 松岡 拓史, テンピア ジュリエット, 山田 知之, 小椋 友寛, Lain-Jong Li, 坂上 知, 蒲 江,
竹延 大志

2P-9
☆

Ab Initio Calculations of the Influence of Surface Water on Graphene

2P-10
☆

垂直電場中の二層グラフェンの熱電効果に関する理論解析

2P-11
☆

Novel 2D Heterostructures of Monolayer WS2 and 2D Perovskite85* 木岡 夕星, 前川 侑毅, 笹岡 健二, 山本 貴博
86* 掘井 耀, 笹岡 健二, 山本 貴博, 福山 秀敏
87* Ufuk Erkılıç, Hyun Goo Ji, Kazunari Matsuda, Hiroki Ago

フラーレンの化学
2P-12

Variation of excited-state dynamics in trifluoromethyl functionalized C60 fullerenes

88* Jaehong Park

ナノチューブの物性
2P-13

カーボンナノチューブフォレストメタマテリアルの光学特性

89* 古田 寛, Pander Adam, 高野 恵介, 八田 章光, 中嶋 誠
2P-14

Analysis on carbon nanotube dispersibility by using differential centrifugal sedimentation90* 清水 太陽, 山田 健郎, 小久保 研, 畠 賢治
2P-15

半導体CNT薄膜の電気伝導特性のCNT直径ばらつきの影響* 佃 将明, 山本 貴博

x91

９月１２日 （水）2P-16

Mechanical properties of carbon nanotubes under the uniaxial strain

92* 米山 和文, 岡田 晋

ナノチューブの応用
2P-17

SWNT films doped with Trifluoromethanesulfonic acid as durable electrode in perovskite
solar cells

93* Ahmed Shawky, Il Jeon, Esko I. Kauppinen, Yutaka Matsuo, Shigeo Maruyama
2P-18

結合剤を用いた強化CNT撚糸の機械的特性

94* 喜納 太一, 苅田 基志, 中野 貴之, 井上 翼
2P-19

カーボンナノチューブを用いたナノエミッターにおける電界放出の対向電極形状依存性

95* 舟山 啓太, 廣谷 潤, 大野 雄高, 島岡 敬一, 田中 宏哉, 田所 幸浩

ナノチューブの生成と精製
2P-20

塩化物介在CVD法による多層CNT成長における研究96* 小松原 孝太, 林 竜弘, 苅田 基志, 中野 貴之, 井上 翼
2P-21

Fe/Gd/Al触媒を用いた数ミリメートル長単層カーボンナノチューブフォレストの合成

97* 仲川 黎, 佐藤 俊裕, 野田 優, 杉目 恒志
2P-22

Increasing ethylene conversion efficiency using pre-catalytic treatment prior to singlewalled carbon nanotube synthesis

98* 松本 尚之, 石沢 佐智子, 入江 路子, 平野 めぐみ, 畠 賢治, フタバ ドン

ナノホーン
2P-23

Preparation Conditions for Carbon Nanobrushes: Influence of Catalyst Types99* Ryota Yuge, Fumiyuki Nihey, Kiyohiko Toyama, Masako Yudasaka

グラフェン生成2P-24

減圧CVDによるグラフェンの直接成長 --- サファイア表面の結晶方位の影響 ---100* 上田 悠貴, 山田 純平, 小野 大志, 丸山 隆浩, 成塚 重弥

グラフェンの物性
2P-25

テラヘルツ時間領域分光法を用いたグラフェンの散乱時間と電気特性測定101* 藤井 高志, 左右田 航平, 毛利 真一郎, 荒木 努, 上田 悠貴, 成塚 重弥, 岩本 敏志
2P-26

Quantum description of excitation of surface plasmon by light in graphene102* M. Shoufie Ukhtary, Riichiro Saito

グラフェンの応用
2P-27

グラフェンから成る多孔体を利用した新規冷却システム* 西原 洋知, 野村 啓太, 山本 雅納, 伊藤 仁, 内村 允宣, 京谷 隆

xi

103

９月１２日 （水）2P-28

トワイライト蛍光顕微鏡観察における液中酸化グラフェンのコントラスト機構

104* 石川 祐貴, 佐野 正人

原子層
2P-29

Exciton-phonon coupling in MoS2 by resonance Raman Scattering

105* Toshiya Shirakura, Riichiro Saito
2P-30

層状カルコゲナイドの有機金属CVD成長におけるアルカリ金属の効果106* 小林 佑, 吉田 昭二, 入沢 寿史, 岡田 直也, Lim Hong En, 渡邊 賢司, 谷口 尚,
真庭 豊, 武内 修, 重川 秀実, 宮田 耕充
2P-31

WS2/MoS2面内ヘテロ接合を用いた電気二重層発光ダイオード

107* 高口 裕平, 蒲 江, 松岡 拓史, 小林 佑, 竹延 大志, 真庭 豊, 宮田 耕充
2P-32

金ドット核発生制御により合成した集積化WS2の層数制御

108* 亀山 智矢, 李 超, 金子 俊郎, 加藤 俊顕
2P-33

Asymmetric carrier accumulation in bilayer van der Waals heterostructures of TMDC underan external electric field109* 丸山 実那, 岡田 晋
2P-34

Facile Production of MoS2 Nanosheets by Ball Milling: Optimization of Operating
Parameters

110* Naoko Ogino, Ahmad Tayyebi, Naoki Komatsu

ナノ炭素粒子2P-35

20ケルビンにおけるポリイン分子のレーザー誘起リン光111* 若林 知成, 尾𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎𥔎

その他
2P-36

Correlation between Pore Size Distribution and Hydrogen Production in Thermal Catalytic
Decomposition of Methane using Carbon Catalysts* 宮本 大, 梅田 良人, 濱口 裕昭, 鈴木 正史, 針谷 達, 谷本 壮, 滝川 浩史, 須田 善行＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:15 )13:30-14:00 若手奨励賞候補審査優先時間
授賞式 ( 15:15-15:30 )総会 ( 15:30-16:00 )

xii

112

９月１２日 （水）特別講演 ( 16:00-16:30 )2S-5

TEM観察によるCNT１本レベルの温度分布解析

5* 平原 佳織, 橋本 道廣＞＞＞＞＞＞＞ 休憩 ( 16:30-16:45 ) ＜＜＜＜＜＜＜特別講演 ( 16:45-17:15 )2S-6

紡績性MWCNTフォレストの合成と配列CNTアセンブリの応用

6* 井上 翼一般講演 ( 17:15-17:45 )
フラーレン
2-6

電気輸送特性からみたA3C60のモット境界における電子状態

28* 谷垣 勝己, 松田 祐貴, 平郡 諭
2-7

Achieving High Efficiency in Solution-Processed Perovskite Solar Cells using C60/C70 Mixed
Fullerenes* Hao-Sheng Lin, Jeon Il, Shigeo Maruyama, Yutaka Matsuo

移動懇親会 ( 18:30-20:30 )

xiii

29

９月１３日 （木）特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
一般講演 ( 9:00-9:30 )ナノチューブの応用
3-1

Progress Review on Single-walled Carbon Nanotube Electrodes in Flexible Photovoltaics

30* Il Jeon, Esko I. Kaupinnen, Yutaka Matsuo, Shigeo Maruyama
3-2Lightweight Copper-matrix/Carbon Nanotube Composites with Electrical Performances
Rivalling Copper

31

Rajyashree Sundaram, Guohai Chen, Takeo Yamada, Don Futaba, Kenji Hata,* Atsuko Sekiguchi

特別講演 ( 9:30-10:00 )3S-7

カーボンナノチューブ薄膜を用いた透明で柔軟なエネルギーハーベスター

7* 大野 雄高

一般講演 ( 10:00-10:30 )ナノチューブの応用 ・ ナノチューブの物性
3-3Flexible carbon nanotube ultraviolet sensing and memorizing array

32

Ting-Yu Qu, Yun Sun, Hui-Ming Cheng, * Dongming Sun
3-4

Molecular screening effects on exciton-carrier interactions in suspended carbon nanotubes

33

Takushi Uda, Shunsuke Tanaka, * Yuichiro K. Kato＞＞＞＞＞＞＞ 休憩 ( 10:30-10:45 ) ＜＜＜＜＜＜＜特別講演 ( 10:45-11:15 )3S-8

ナノカーボンテラヘルツ帯イメージャー～マルチビュー・超回折限界計測と物質・生体非破壊分析～8* 河野 行雄

一般講演 ( 11:15-11:30 )ナノチューブの物性
3-5

単一カーボンナノチューブ量子ドットのテラヘルツ分光

34* 吉田 健治, 鶴谷 琢磨, 矢島 史彬, 清水 麻希, 本間 芳和, 平川 一彦

ポスタープレビュー ( 11:30-12:15 )（☆） 若手奨励賞候補
若手奨励賞候補
3P-1
Dynamic Behavior of a Single but Hydrogen-Bonded Water Molecule inside a Hydroxy
Open-Cage Fullerene C60 Derivative☆

* 長谷川 翔大, 橋川 祥史, 村田 靖次郎

xiv

113

９月１３日 （木）3P-2☆

デンドロンによる単層カーボンナノチューブの化学修飾：修飾率と近赤外発光特性の制御

3P-3

Investigation on mechanism of voltage generation by continuous flow of fluid on surface ofcarbon nanotube thin film☆

114

* 紺野 優以, 山田 道夫, 前田 優, Zhao Pei, Zhao Xiang, 江原 正博, 永瀬 茂
115

* Yuzuki Ando, Ryohei Nishi, Shigeru Kishimoto, Hiromichi Kataura, Yutaka Ohno

3P-4☆

Design and fabrication of carbon nanotube analog integrated circuits

3P-5☆

プラズマパラメータ制御による優先成長(6,4)単層カーボンナノチューブの純度向上

3P-6☆

温度応答性ポリマーを用いた半導体単層カーボンナノチューブの選択的抽出

3P-7☆

Optical properties of two-dimensional lateral hetero structure WS2/MoS2

3P-8

Improved Crystallinity of CVD-Grown Atomic Layered WS2 from H2S and WF6 Precursors
with NaCl Assistance116* 鹿嶋 大雅, 廣谷 潤, 岸本 茂, 大野 雄高
117* 志摩 拓哉, 許 斌, 金子 俊郎, 加藤 俊顕
118* 志村 英里子, 菅井 俊樹, 桒原 彰太
119* 島崎 雅史, 斉藤 哲輝, 宮田 耕充, 宮内 雄平, 松田 一成☆

* 岡田 光博, 岡田 直也, 張 文馨, 安藤 淳, 入沢 寿史

3P-9☆

硫黄とリンをドープしたグラフェンの合成とバッテリー応用

3P-10
☆

Properties of graphene films synthesized by lamp heating CVD

3P-11
☆

Near-field optical transition in graphene

3P-12
☆

グラフェン量子ドット増感太陽電池の創製

120

121

* 井上 司, 大町 遼, Zois Syrgiannis, 畑尾 秀哉, 吉川 浩史, Maurizio Prato, 篠原 久典
122* 小森 雅樹, 大西 臣禎, Pander Adam, 八田 章光, 古田 寛
123

* Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito124* 城 涼佳, 森田 博暉, 菅井 俊樹, 桒原 彰太

フラーレンの応用
3P-13

Investigation of catalytic activity for reduction of 4-nitroaniline with [C60]fullerene
nanowhisker-platinum nanoparticle composites

125* Jeong Won Ko, Weon Bae Ko

金属内包フラーレン
3P-14

Isolation and Characterization of Sc-dimetallofullerenes: Sc2Cn(n＝76, 78, 80)* 吉田 俊, 菊地 耕一, 阿知波 洋次, 兒玉 健

xv

126

９月１３日 （木）3P-15

Isolation and Characterization of Dy2@Cn(n＝78, 80) Anion127* 髙井 良也, 菊地 耕一, 阿知波 洋次, 兒玉 健

ナノチューブの物性
3P-16半導体型SWCNTsの熱電物性の純度依存性

128* 一ノ瀬 遥太, 吉田 朱里, 福原 健吾, 生駒 栞奈, 枝 淳子, 大久保 瞳, 蓬田 陽平,
柳 和宏

ナノチューブの応用
3P-17

Passivation with Parylene-C in carbon nanotube thin-film transistors

129* Yuto Shimasaki, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno
3P-18

Numerical Simulation on Thermoelectric Power of Carbon Nanotubes Modified by
Diazonium Salts

130* 荒木 那由, 山本 貴博
3P-19

Coarse-grained modeling of free thermal vibrations of singled-walled carbon nanotubes

131* 高 嬉淵, 吉本 勇太, 千足 昇平, 塩見 淳一郎, 丸山 茂夫

ナノチューブの生成と精製
3P-20

振電相互作用密度解析に基づく(6,5)カーボンナノチューブの成長機構

132* 西川 智裕, 佐藤 徹, 春田 直毅, 兒玉 健, 阿知波 洋次
3P-21

Synthesis and characterization of one-dimensional heterostructures

133* Yongjia Zheng, Yang Qian, Ming Liu, Akihito Kumamoto, Yuichi Ikuhara,
Anton Anisimov, Esko I. Kauppinen, Shohei Chiashi, Taiki Inoue, Rong Xiang,
Shigeo Maruyama
3P-22

アルコールガスソース法におけるIr触媒を用いた直径の細い垂直配向した単層カーボンナノ 134
チューブ成長* 岡田 拓也, シャルマ カマル, 鈴木 智子, 才田 隆広, 成塚 重弥, 丸山 隆浩
3P-23

単層カーボンナノチューブ直径と触媒との関係

135* 中野 尭雄

グラフェン生成3P-24

In situ synchrotron X-ray diffraction study of precipitation of multilayer graphene from Ni
catalyst

136* 山田 純平, 上田 悠貴, 竹中 駿, 丸山 隆浩, 成塚 重弥

グラフェンの応用
3P-25

先進プラズマCVDにより合成されたグラフェンナノリボントランジスタのオンオフ比改善機構* 小倉 士忠, 鈴木 弘朗, 金子 俊郎, 加藤 俊顕

xvi

137

９月１３日 （木）グラフェンの物性
3P-26

Hydrogen adsorption on atomic vacancies in Epitaxial graphene toward Hydrogen storage

138* 小幡 吉徳, 草部 浩一, Gagus Sunnarionto, 榎 敏明, 丸山 勲, 西村 智朗, 高井 和之
3P-27

Plasmon Resonance-Induced Electronic Transition in Graphene

139

Jinjiang Zhang, Ruifeng Zhou, Hiro Minamimoto, * Kei Murakoshi

原子層
3P-28

Band gap modulation by chiral phonon oscillations in transition metal dichalcogenides

140* ヌグラハ アフマド, グエン タン フン, 齋藤 理一郎
3P-29

架橋MoS2/WS2積層型ヘテロ構造における層間結合の改善

141* 小島 佳奈, 林 宏恩, 遠藤 尚彦, 小林 佑, 真庭 豊, 宮田 耕充
3P-30

化学気相成長によるInS及びInSeを用いた電気二重層トランジスタ142* 蒲 江, Han-Ching Chang, Chien-Liang Tu, Kuang-I Lin, Chien-Nan Hsiao,
Chang-Hsiao Chen, 竹延 大志
3P-31

単層遷移金属ダイカルコゲナイドにおけるカルコゲン置換

143* 清水 宏, 林 宏恩, 遠藤 尚彦, 小林 佑, 真庭 豊, 宮田 耕充
3P-32

MoS2ナノリボンのエネルギー論と電子構造

144* 澤畑 恒来, 丸山 実那, 岡田 晋
3P-33

単層MoS2 /WSe2 積層型ヘテロ構造を用いたPNダイオードの作製と輸送特性

145* 吉村 真太郎, 小林 佑, 遠藤 尚彦, 林 宏恩, 真庭 豊, 宮田 耕充
3P-34

静電駆動による片持ち梁BNの共振特性

146* 吉川 大貴, 竹井 邦晴, 有江 隆之, 秋田 成司

バイオ
3P-35

グラフェン細孔相互作用に関連した水素結合に特異的な領域におけるシトシンのメチル化形 147
態の振動スペクトル* ゾロツキヒナ タチアナ, 新田 敏士

その他
3P-36

First-principles study of magnetism in vanadium selenide thin films* Mohammad Saeed Bahramy, Masaki Nakano, Satoshi Yoshida, Yue Wang,
Hideki Matsuoka, Yuki Majima, Yuta Ohigashi, Yuta Kashiwabara, Masato Sakano,
Kyoko Ishizaka, Yoshiro Iwasa＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜

xvii

148

９月１３日 （木）ポスターセッション ( 13:30-15:15 )13:30-14:00 若手奨励賞候補審査優先時間
特別講演 ( 15:15-15:45 )3S-9

原子や分子が吸着した単層カーボンナノチューブの化学的および光学特性の第一原理計算9* 大淵 真理一般講演 ( 15:45-17:00 )原子層 ・ ナノチューブの生成と精製 ・ グラフェンの応用
3-6

pH-dependent photoluminescence of monolayer transition-metal dichalcogenides in an
aqueous solution

35* Wenjin Zhang, Kazunari Matsuda, Yuhei Miyauchi
3-7Single-walled carbon nanotubes co-axially wrapped with mono- and few-layer boron nitride
nanotubes and beyond36* 項 栄, 井ノ上 泰輝, Zheng Yongjia, 熊本 明仁, 幾原 雄一, Liu Ming, Qian Yang,
千足 昇平, Kauppinen Esko I., 丸山 茂夫
3-8

Quantum Wells due to Electron-Phonon Interactions in Isotopically Layered DiamondSuperlattices

37* Yuki Bando, Masayuki Toyoda, Takashi Koretsune, Susumu Saito
3-9

Superior thermal conductivity enhancement of polymer composites with bioinspired
graphene architecture

38* Cheng-Te Lin
3-10

Visible-light-induced photodecarbonylation of alpha-diketone-type large acene precursors
on Au(111) surface* Hironobu Hayashi, Hiroko Yamada

xviii

39

September 11th, Tue.
Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
General Lecture ( 9:00-9:30 )Bio ・ Environmental/Safety characterization of nanomaterials
1-1
Protein oxidation by carbon nanotubes is affected by metals originating from thecatalyst* Atsushi Hirano, Momoyo Wada, Takeshi Tanaka, Hiromichi Kataura
1-2

Complete Degradation of Carbon Nanomaterials by Using Hypochlorite* Minfang Zhang, Mei Yang, Hideaki Nakajima, Masako Yudasaka, Sumio Iijima,
Toshiya Okazaki

11

12

1S-1

Special Lecture ( 9:30-10:00 )Near-Infrared Photoluminescent Carbon Nanotubes for Imaging Brown Adipose Tissue* Masako Yudasaka

1

General Lecture ( 10:00-10:30 )Applications of nanotubes ・ Atomic Layers
1-3
Brain Tissue Compatible Neural Probes Made from High Aspect Ratio (60:1) FreeStanding Carbon Nanotube Microelectrode Arrays* Guohai Chen, Don N. Futaba, Robert C. Davis

13

1-4

Formation and Photophysical Properties of Transition Metal Dichalcogenide–Fullerene
Nanohybrids on Semiconducting Electrodes* Tomokazu Umeyama, Jinseok Baek, Hiroshi Imahori

14＞＞＞＞＞＞＞ Coffee Break ( 10:30-10:45 ) ＜＜＜＜＜＜＜Special Lecture ( 10:45-11:15 )Advanced STEM-EELS characterization of low-dimensional materials* Ryosuke Senga

1S-2

General Lecture ( 11:15-11:30 )Properties of graphene
1-5Observation of Edge States of Graphene by FEM and FIM* Yahachi Saito, Yuhdai Watanabe, Tohru Hoshino, Hitoshi Nakahara
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
1P-1
Electronic and vibrational properties of boron-doped armchair graphene nanoribbons☆
* Md Shafiqul Islam, Nguyen Tuan Hung, Ahmad Ridwan Tresna Nugraha,
Riichiro Saito
xix

2

15

41

September 11th, Tue.
1P-2☆

High yield fabrication of quantum device made of graphene nanoribbon* Wakana Okita, Hiroo Suzuki, Toshiro Kaneko, Toshiaki Kato

42

1P-3
☆

Epitaxial growth of large monolayer h-BN and its application to gas barrier layer* Alexandre Budiman Taslim, Hideaki Nakajima, Yung-Chang Lin, Yuki Uchida,
Kenji Kawahara, Takahiro Morimoto, Toshiya Okazaki, Kazu Suenaga,
Hiroki Hibino, Hiroki Ago

43

1P-4

Reduction of the temperature dependence of the resonance frequency shift in nanoelectro-mechanical resonator with a van der Waals heterojunction* Taichi Inoue, Yuta Mochizuki, Kuniharu Takei, Takayuki Arie, Seiji Akita

44

1P-5
☆

Development of fabrication method for high quality hBN-encapsulated TMD device* Takato Hotta, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Hisanori Shinohara,
Ryo Kitaura

45

1P-6

Synthesis of small-diameter, and high-crystallinity single-wall carbon nanotubes(SWCNTs) using Ni-Al-O nanopowder* Bozhi Chen, Toshihiro Sato, Hisashi Sugime, Eleni Temeche, Richard Laine. M.,
Suguru Noda

46

1P-7
☆

Carrier density control of SWCNTs for electric power generation* Guowei Wang, Takeshi Tanaka, Atsushi Hirano, Hiromichi Kataura

47

1P-8
☆

Triboelectric generator with carbon nanotube thin film for wearable electronics* Masahiro Matsunaga, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

48

1P-9

Photoluminescence properties of meta- linked bis-aryl-modified single-walled carbon
nanotubes* Boda Yu, Tomohiro Shiraki, Tsuyohiko Fujigaya

49

Photoluminescence energy shift of locally functionalized single-walled carbon
nanotubes by effects of solvent molecules* Yoshiaki Niidome, Tomohiro Shiraki, Tsuyohiko Fujigaya

50

Spontaneous Assembly of Chevrel-Phase Mo6Te6 Nanowires Inside Carbon Nanotubes* Masataka Nagata, Yusuke Nakanishi, Shivani Shukla, Zheng Liu,
Yung-Chang Lin, Kazu Suenaga , Hisanori Shinohara

51

☆

☆

☆
1P-10
☆
1P-11
☆

Chemistry of fullerenes
Basic Physico-Chemical Properties of C 2V-Symmetrical Octasubstituted Fullerene
Derivatives* Yue Ma, Hiroshi Ueno, Hiroshi Okada, Kouya Uchiyama, Hiroshi Moriyama,
Yutaka Matsuo

1P-12

xx

52

September 11th, Tue.
Properties of nanotubes
Evaluation of thermal conductance of single-wall carbon nanotube thin film by time
domain thermo-reflectance method* Hiroyuki Matsuo, Yohei Yomogida, Takashi Yagi, Kazuhiro Yanagi

1P-13

53

1P-14

Chemical reactions at local modified sites of single-walled carbon nanotubes forphotoluminescence modulation* Tomohiro Shiraki, Tamehito Shiga, Naotoshi Nakashima, Tsuyohiko Fujigaya

54

1P-15

Theory of circular dichroism in single wall carbon nanotubes including depolarization
effect* Yuya Iwasaki, Riichiro Saito

55

1P-16

Free-Standing Single-Walled Carbon Nanotube Thin Films Fabricated by Wet Processwith narrow bundle thickness distribution* Yuichi Kato, Atsuko Sekiguchi, Kazufumi Kobashi, Takeo Yamada, Kenji Hata

56

Applications of nanotubes
Modification of multi-walled carbon nanotubes with photoreactive silane coupling
agent: application for highly adhesive surface coating* Tomoya Takada, Seisyu Takakuwa, Yuichiro Kitamura

1P-17

1P-18

Determination of association constants of pyrene- and porphyrin-based nanotweezers
and nanocalipers with SWNTs* Alejandro López-Moreno, Naoki Komatsu

Formation and purification of nanotubes
Chemical reaction analysis of cobalt oxide clusters with ethanol by FT-ICR mass
spectrometer* Ryohei Yamada, Kaoru Hisama, Ken Mizutani, Shohei Chiashi,
Shigeo Maruyama

1P-19

57

58

59

1P-20

Fractal analysis of self-organized carbon nanotube forest structure* Adam Pander, Takatsugu Onishi, Fumiya Nagamine, Sachio Hayashi,
Akimitsu Hatta, Hiroshi Furuta

60

1P-21

Effects of catalysts and growth conditions on growth process of individual SWNTs
studied by digital isotope labeling* Shun Yamamoto, Keigo Otsuka, Bunsho Koyano, Taiki Inoue, Rong Xiang,
Shohei Chiashi, Shigeo Maruyama

61

xxi

September 11th, Tue.
Formation and purification of nanotubes ・ Endohedral nanotubes
Local structure and properties of polycyclic aromatic hydrocarbon molecule
encapsulated in single-walled carbon nanotubes studied by molecular dynamics
simulations Ⅲ* Ryo Nagai, Yosuke Kataoka, Hironori Ogata

1P-22

Graphene synthesis
Analysis of graphene-h-BN heterostructure growth mechanism from ethanol andammonia borane* Hayato Arai, Naomasa Ueda, Daisuke Ito, Taiki Inoue, Rong Xiang,
Shohei Chiashi, Shigeo Maruyama

1P-23

Applications of graphene
Mechanically coupled graphene drum-type mechanical-resonators* Keisuke Akazawa, Yuta Mochizuki, Taichi Inoue, Daiki Yoshikawa,
Kuniharu Takei, Takayuki Arie, Seiji Akita

1P-24

62

63

64

1P-25

Graphene mechanical resonator decorated with quantum-dots.
* Masashi Hori, Yuta Mochizuki, Taichi Inoue, Daiki Yoshikawa, Kuniharu Takei,
Takayuki Arie, Seiji Akita

65

1P-26

Reduction reaction kinetics of individual graphene oxide sheet studied by Twilightfluorescence microscopy* Katsuki Kanazawa, Masahito Sano

66

Properties of graphene
1P-27 Synthesis and Photophysical Properties of Covalently Linked Polycyclic Aromatic
Hydrocarbon-Porphyrin Systems* Hiroki Yamada, Takuma Hanaoka, Tomokazu Umeyama, Jaehong Park,
Hiroshi Imahori
1P-28

Moiré superlattices of graphene on Cu (111)* Yui Ogawa, Yoshitaka Taniyasu

Atomic Layers
Site-dependence of relationships between photoluminescence and applied electric fieldin monolayer and bilayer molybdenum disulfide* Junji Nozaki, Hiroyuki Nishidome, Mina Maruyama, Susumu Okada,
Satoshi Kusaba, Koichiro Tanaka, Keiji Ueno, Yohei Yomogida, Kazuhiro Yanagi

1P-29

1P-30

Competition between electron and hole doping by hydrazine molecular adsorption on
MoS2* Naoko Kodama, Yasushi Ishiguro, Kazuyuki Takai

xxii

67

68

69

70

September 11th, Tue.
1P-31

Carrier transport properties of WS2 nanotubes obtained from solvothermallysynthesized W18O49 nanowires* Yohei Yomogida, Kazuhiro Yanagi

71

1P-32

Gate-induced potassium intercalation to exfoliated MoS2 flakes* Ryotaro Okada, Yohei Yomogida, Kazuhiro Yanagi

72

1P-33

Photoluminescence weakening and overlayer deposition of WS2 induced by van der
Waals interaction* Hyun Goo Ji, Adha Sukma Aji, Kazunari Matsuda, Hiroki Ago

73

1P-34

Edge controllable growth of hexagonal boron nitride crystals by atmospheric pressurechemical vapor deposition* Kamal Prasad Sharma, Aliza Khaniya Sharma, Golap Kalita, Masaki Tanemura,
Takahiro Maruyama

74

Carbon nanoparticles
Electronic structure of thin films of hydrocarbon molecules under an external electric
field* Manaho Matsubara, Susumu Okada

1P-35

75

Bio
1P-36

Direct Exfoliation of Graphene and h-BN with Various Photosensitizers in Water
Aiming at Cancer Phototherapy* Ahmad Tayyebi, Naoko Ogino, Naoki Komatsu76＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:15 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Special Lecture ( 15:15-15:45 )Supramolecular doping of carbon nanotubes* Yoshiyuki Nonoguchi

1S-3

General Lecture ( 15:45-16:30 )Properties of nanotubes ・ Properties of graphene ・ Atomic Layers
1-6
Effective tube-length and density dependences on electric and mechanical properties ofsingle-walled carbon nanotube fibers formed by wet-spinning* Naoko Tajima, Takayuki Watanabe, Takahiro Morimoto, Kazufumi Kobashi,
Ken Mukai, Kinji Asaka, Toshiya Okazaki

xxiii

3

16

September 11th, Tue.
1-7

Control of chemical modification of graphene surfaces by substrate surface
modification with self-assembled monolayers
Keiichiro Ikeda, * Ryo Nouchi

17

1-8

Mesoscopic Thermoelectric Measurements of 2D Metal-Organic Framework* Ryuichi Tsuchikawa, Neda Lotfizadeh, Shuwan Liu, Nabajit Lahiri,
Mackenzie Lach, Celine Slam, Janis Louie, Vikram Deshpande

18＞＞＞＞＞＞＞ Coffee Break ( 16:30-16:45 ) ＜＜＜＜＜＜＜General Lecture ( 16:45-17:45 )Atomic Layers ・ Applications of graphene ・ Properties of graphene ・ Other topics
1-9
In-situ measurement of WS2 crystal growth with Au dot nucleation control* Chao Li, Tomoya Kameyama, Toshiro Kaneko, Toshiaki Kato

19

1-10

Extraordinarily stable supercapacitor electrodes with three-dimensional edge-freegraphene walls* Keita Nomura, Hirotomo Nishihara, Tomoya Shimura, Toshihiro Asada,
Naoya Kobayashi, Takashi Kyotani

20

1-11

Geometric and electronic structures of three-dimensional porous carbon networks* Yasumaru Fujii, Mina Maruyama, Susumu Okada

21

1-12

Development of combined ion trap ion mobility measurement system
Yudai Hoshino, Natsuki Terada, Fumiaki Uchiyama, Reona Miyamato,* Toshiki Sugai

22

Exchange meeting with corporate exhibitors ( 17:45-19:00 )xxiv

September 12th, Wed.
Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)Award Nominee Lecture: 10min (Presentation) + 10min (Discussion)
Poster Preview: 1min (Presentation)
General Lecture ( 9:00-10:25 )Lectures of Osawa Award and Iijima Award Nominees
2-1
Controlled growth of multilayer h-BN using Ni-Fe alloy and its growth mechanism* Yuki Uchida, Sho Nakandakari, Kenji Kawahara, Shigeto Yamasaki,
Masatoshi Mitsuhara, Hiroki Ago

23

2-2

Visualization of local defects affecting electrical transport properties of large areagraphene films via lock-in thermography* Hideaki Nakajima, Takahiro Morimoto, Yoshiue Ikuta, Yuki Okigawa,Takatoshi Yamada, Kenji Kawahara, Hiroki Ago, Toshiya Okazaki

24

2-3

In Situ Study on Catalysts for Controlled Growth of Carbon Nanotubes* Feng Yang, Yan Li

25

2-4

Narrow-band thermal exciton radiation in single-walled carbon nanotubes* Taishi Nishihara, Akira Takakura, Yuhei Miyauchi, Kenichiro Itami

26＞＞＞＞＞＞＞ Coffee Break ( 10:25-10:45 ) ＜＜＜＜＜＜＜Special Lecture ( 10:45-11:15 )2S-4
Separation of single-wall carbon nanotubes by gel column chromatography and theirapplications* Takeshi Tanaka
General Lecture ( 11:15-11:30 )Formation and purification of nanotubes
2-5
Low-defective dispersion of SWCNTs by repetitive sonication process* Hiromichi Kataura, Mayumi Tsuzuki, Mariko Kubota, Tomoko Sugita,
Guowei Wang, Takeshi Tanaka
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
2P-1
General Method for the Synthesis of Transition-metal Dichalcogenide Nanoribbons
Inside Carbon Nanotubes☆
* Motoki Aizaki, Ellne Park, Zheng Liu, Kazu Suenaga, Yusuke Nakanishi,
Hisanori Shinohara
2P-2☆

Morphology-dependent Thermal Transport of Single-walled Carbon Nanotube Films* Takuya Kitano, Tsuyoshi Kawai, Yoshiyuki Nonoguchi
xxv

4

27

77

78

September 12th, Wed.
Tuning the electronic properties of single-walled carbon nanotubes by defluorinationassisted nitrogen doping and defect formation for efficient oxygen reduction
electrocatalysis* Koji Yokoyama, Yoshinori Sato, Masashi Yamamoto, Tetsuo Nishida,
Kenichi Motomiya, Kazuyuki Tohji, Yoshinori Sato79

Local strain control for realization of low-voltage operable, highly-stretchable carbon
nanotube thin-film transistors* Yuya Nishio, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

80

2P-5
☆

Ratchet-free solid-state inertial rotation of a guest ball in a tight tubular host
* Taisuke Matsuno, Yusuke Nakai, Sota Sato, Yutaka Maniwa, Hiroyuki Isobe

81

2P-6

Repeated synthesis of vertically-aligned CNTs via reduction-CVD-oxidation treatmentof Co-Al-O catalyst layer* Toshihiro Sato, Hisashi Sugime, M. Richard Laine, Suguru Noda

82

Performance improvement of transparent solar cell using few-layered transition metal
dichalcogenide by Schottky barrier control* Yoshiki Yamaguchi, Wakana Okita, Chao Li, Toshiro Kaneko, Toshiaki Kato

83

2P-8
☆

Universality in Transition Metal Dichalcogenide Light-Emitting Devices* Hirofumi Matsuoka, Juliette Tempia, Tomoyuki Yamada, Tomohiro Ogura,Lain-Jong Li, Tomo Sakanoue, Jiang Pu, Taishi Takenobu

84

2P-9
☆

Ab Initio Calculations of the Influence of Surface Water on Graphene* Yusei Kioka, Yuki Maekawa, Kenji Sasaoka, Takahiro Yamamoto

85

2P-10

Theoretical Analysis on Thermoelectric Effects of Bilayer Graphene in Vertical
Electric Field* Hikaru Horii, Kenji Sasaoka, Takahiro Yamamoto, Hidetoshi Fukuyama

86

Novel 2D Heterostructures of Monolayer WS2 and 2D Perovskite* Ufuk Erkılıç, Hyun Goo Ji, Kazunari Matsuda, Hiroki Ago

87

2P-3

☆

2P-4
☆

☆
2P-7
☆

☆
2P-11
☆

Chemistry of fullerenes
2P-12 Variation of excited-state dynamics in trifluoromethyl functionalized C60 fullerenes* Jaehong Park
Properties of nanotubes
Optical Properties of Carbon Nanotube Forest Metamaterials* Hiroshi Furuta, Adam Pander, Keisuke Takano, Akimitsu Hatta,
Makoto Nakajima

2P-13

xxvi

88

89

September 12th, Wed.
2P-14

Analysis on carbon nanotube dispersibility by using differential centrifugal
sedimentation* Taiyo Shimizu, Takeo Yamada, Ken Kokubo, Kenji Hata

90

2P-15

Diameter variation effects on electrical transport in semiconducting carbon nanotube
thin film* Masaaki Tsukuda, Takahiro Yamamoto

91

2P-16

Mechanical properties of carbon nanotubes under the uniaxial strain* Kazufumi Yoneyama, Susumu Okada

92

Applications of nanotubes
2P-17 SWNT films doped with Trifluoromethanesulfonic acid as durable electrode inperovskite solar cells* Ahmed Shawky, Il Jeon, Esko I. Kauppinen, Yutaka Matsuo, Shigeo Maruyama

93

2P-18

Mechanical properties of CNT spun yarn reinforced by polymer infiltration andchemical binder* Taichi Kina, Motoyuki Karita, Takayuki Nakano, Yoku Inoue

94

2P-19

Dependence of field emission from carbon nanotube tip on the size of the counterelectrode* Keita Funayama, Jun Hirotani, Yutaka Ohno, Keiichi Shimaoka, Hiroya Tanaka,
Yukihiro Tadokoro

95

Formation and purification of nanotubes
Study of the growth of MWCNT forest by chloride-mediated CVD* Kota Komatsubara, Tatsuhiro Hayashi, Motoyuki Karita, Takayuki Nakano,
Yoku Inoue

2P-20

96

2P-21

Growth of Multi-Millimeter-Tall Single-Wall Carbon Nanotube Forests Using
Fe/Gd/Al Catalysts* Rei Nakagawa, Toshihiro Sato, Suguru Noda, Hisashi Sugime

97

2P-22

Increasing ethylene conversion efficiency using pre-catalytic treatment prior to singlewalled carbon nanotube synthesis* Naoyuki Matsumoto, Sachiko Ishizawa, Michiko Irie, Megumi Hirano,
Kenji Hata, Don Futaba

98

Nanohorns
Preparation Conditions for Carbon Nanobrushes: Influence of Catalyst Types* Ryota Yuge, Fumiyuki Nihey, Kiyohiko Toyama, Masako Yudasaka

2P-23

xxvii

99

September 12th, Wed.
Graphene synthesis
Direct growth of graphene by low-pressure CVD --- Effect of crystal orientation ofsapphire surface --* Yuki Ueda, Jumpei Yamada, Taishi Ono, Takahiro Maruyama, Shigeya Naritsuka

2P-24

Properties of graphene
Measurement of scattering time and electrical properties for graphene using THz timedomain spectroscopy* Takashi Fujii, Kohei Souda, Shinichiro Mouri, Tsutomu Araki, Yuki Ueda,
Shigeya Naritsuka, Toshiyuki Iwamoto

2P-25

2P-26

Quantum description of excitation of surface plasmon by light in graphene* M. Shoufie Ukhtary, Riichiro Saito

Applications of graphene
2P-27 New refrigeration systems based on elastic nanosponges consisting of graphene* Hirotomo Nishihara, Keita Nomura, Masanori Yamamoto, Masashi Ito,
Masanobu Uchimura, Takashi Kyotani
2P-28

Contrast mechanism of graphene oxide in Twilight fluorescence microscopy* Yu-uki Ishikawa, Masahito Sano

Atomic Layers
Exciton-phonon coupling in MoS2 by resonance Raman Scattering* Toshiya Shirakura, Riichiro Saito

2P-29

100

101

102

103

104

105

2P-30

Alkali metal-assisted growth in metal-organic chemical vapor deposition of twodimensional layered chalcogenides* Yu Kobayashi, Shoji Yoshida, Toshifumi Irisawa, Naoya Okada, Lim Hong En,
Kenji Watanabe, Takashi Taniguchi, Yutaka Maniwa, Osamu Takeuchi,
Hidemi Shigekawa, Yasumitsu Miyata

106

2P-31

Electric double layer light emitting diode of WS2/MoS2 in-plane heterostructures* Yuhei Takaguchi, Jiang Pu, Hirofumi Matsuoka, Yu Kobayashi, Taishi Takenobu,
Yutaka Maniwa, Yasumitsu Miyata

107

2P-32

Layer-number-controlled synthesis of WS2 integrated by Au dot technology* Tomoya Kameyama, Chao Li, Toshiro Kaneko, Toshiaki Kato

108

2P-33

Asymmetric carrier accumulation in bilayer van der Waals heterostructures of TMDC
under an external electric field* Mina Maruyama, Susumu Okada

109

2P-34

Facile Production of MoS2 Nanosheets by Ball Milling: Optimization of Operating
Parameters* Naoko Ogino, Ahmad Tayyebi, Naoki Komatsu

110

xxviiiSeptember 12th, Wed.
Carbon nanoparticles
Laser Induced Phosphorescence of Polyyne Molecules at 20 K
* Tomonari Wakabayashi, Kazunori Ozaki, Hal Suzuki, Yusuke Morisawa,
Urszula Szczepaniak

2P-35

Other topics
Correlation between Pore Size Distribution and Hydrogen Production in Thermal
Catalytic Decomposition of Methane using Carbon Catalysts* Dai Miyamoto, Yoshito Umeda, Hiroaki Hamaguchi, Masashi Suzuki,
Toru Harigai, Tsuyoshi Tanimoto, Hirofumi Takikawa, Yoshiyuki Suda

2P-36

111

112

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:15 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Awards Ceremony ( 15:15-15:30 )Genaral Meeting ( 15:30-16:00 )Special Lecture ( 16:00-16:30 )2S-5
Determination of temperature distribution on a carbon nanotube by transmission
electron microscopy* Kaori Hirahara, Michihiro Hashimoto

5＞＞＞＞＞＞＞ Coffee Break ( 16:30-16:45 ) ＜＜＜＜＜＜＜Special Lecture ( 16:45-17:15 )2S-6
Growth of spin-capable MWCNT forest and application of aligned CNT assemblies* Yoku Inoue
General Lecture ( 17:15-17:45 )Fullerenes
2-6Electronic states of A3C60 in the Mott boundary viewed from electrical transport* Katsumi Tanigaki, Yuki Matsuda, Satoshi Heguri
2-7

Achieving High Efficiency in Solution-Processed Perovskite Solar Cells using C60/C70
Mixed Fullerenes* Hao-Sheng Lin, Jeon Il, Shigeo Maruyama, Yutaka Matsuo

MovingBanquet ( 18:30-20:30 )
xxix

6

28

29

September 13th, Thu.
Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
General Lecture ( 9:00-9:30 )Applications of nanotubes
3-1
Progress Review on Single-walled Carbon Nanotube Electrodes in Flexible
Photovoltaics* Il Jeon, Esko I. Kaupinnen, Yutaka Matsuo, Shigeo Maruyama
3-2Lightweight Copper-matrix/Carbon Nanotube Composites with Electrical
Performances Rivalling Copper
Rajyashree Sundaram, Guohai Chen, Takeo Yamada, Don Futaba, Kenji Hata,* Atsuko Sekiguchi

Special Lecture ( 9:30-10:00 )Flexible and transparent energy harvesters with carbon nanotube thin films* Yutaka Ohno

3S-7

General Lecture ( 10:00-10:30 )Applications of nanotubes ・ Properties of nanotubes
3-3
Flexible carbon nanotube ultraviolet sensing and memorizing array
Ting-Yu Qu, Yun Sun, Hui-Ming Cheng, * Dongming Sun
3-4

Molecular screening effects on exciton-carrier interactions in suspended carbon
nanotubes
Takushi Uda, Shunsuke Tanaka, * Yuichiro K. Kato

30

31

7

32

33

＞＞＞＞＞＞＞ Coffee Break ( 10:30-10:45 ) ＜＜＜＜＜＜＜Special Lecture ( 10:45-11:15 )Nano-carbon terahertz imagers：Multi-view and super-resolution measurements andtheir applications to materials and biological non-destructive analysis* Yukio Kawano

3S-8

8

General Lecture ( 11:15-11:30 )Properties of nanotubes
3-5Terahertz spectroscopy of individual carbon nanotube quantum dots
* Kenji Yoshida, Takuma Tsurugaya, Fumiaki Yajima, Maki Shimizu,
Yoshikazu Homma, Kazuhiko Hirakawa

34

xxx

September 13th, Thu.
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
3P-1
Dynamic Behavior of a Single but Hydrogen-Bonded Water Molecule inside a
Hydroxy Open-Cage Fullerene C60 Derivative☆
* Shota Hasegawa, Yoshifumi Hashikawa, Yasujiro Murata

113

Functionalization of single-walled carbon nanotube with dendrons: Control offunctionalization degree and infrared photoluminescence properties* Yui Konno, Michio Yamada, Yutaka Maeda, Pei Zhao, Xiang Zhao,
Masahiro Ehara, Sigeru Nagase

114

Investigation on mechanism of voltage generation by continuous flow of fluid on
surface of carbon nanotube thin film
* Yuzuki Ando, Ryohei Nishi, Shigeru Kishimoto, Hiromichi Kataura, Yutaka Ohno

115

3P-4
☆

Design and fabrication of carbon nanotube analog integrated circuits* Taiga Kashima, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

116

3P-5

Purity improvement of preferentially synthesized (6,4) single-walled carbon nanotubes 117
by controlling plasma parameters* Takuya Shima, Bin Xu, Toshiro Kaneko, Toshiaki Kato

3P-2
☆

3P-3
☆

☆

Selective extraction of semiconducting single-walled carbon nanotubes with athermoresponsive polymer* Eriko Shimura, Toshiki Sugai, Shota Kuwahara

118

3P-7
☆

Optical properties of two-dimensional lateral hetero structure WS2/MoS2* Masafumi Shimasaki, Tetsuki Saito, Yasumitsu Miyata, Yuhei Miyauchi,
Kazunari Matsuda

119

3P-8

Improved Crystallinity of CVD-Grown Atomic Layered WS2 from H2S and WF6
Precursors with NaCl Assistance* Mitsuhiro Okada, Naoya Okada, Wen Hsin Chang, Atsushi Ando,Toshifumi Irisawa

120

3P-9
☆

Sulfur- and phosphorous-doped graphene and its battery application* Tsukasa Inoue, Haruka Omachi, Zois Syrgiannis, Shuya Hatao,
Hirofumi Yoshikawa, Maurizio Prato, Hisanori Shinohara

121

3P-10
☆

Properties of graphene films synthesized by lamp heating CVD* Masaki Komori, Takatsugu Onishi, Adam Pander, Akimitsu Hatta,
Hiroshi Furuta

122

3P-11
☆

Near-field optical transition in graphene* Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito

123

3P-6
☆

☆

xxxi

September 13th, Thu.
3P-12☆

Graphene quantum dots as sensitizer in solid-state dye sensitized solar cells* Suzuka Tachi, Hiroki Morita, Toshiki Sugai, Shota Kuwahara

Applications of fullerenes
3P-13 Investigation of catalytic activity for reduction of 4-nitroaniline with [C60]fullerene
nanowhisker-platinum nanoparticle composites* Jeong Won Ko, Weon Bae Ko
Endohedral metallofullerenes
Isolation and Characterization of Sc-dimetallofullerenes: Sc2Cn(n＝76, 78, 80)* Shun Yoshida, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama

3P-14

3P-15

Isolation and Characterization of Dy2@Cn(n＝78, 80) Anion* Ryoya Takai, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama

Properties of nanotubes
Influence of Purity on Thermoelectric Properties of Semiconducting SWCNTs Thin
Films
* Yota Ichinose, Akari Yoshida, Kengo Fukuhara, Kanna Ikoma, Junko Eda,
Hitomi Okubo, Yohei Yomogida, Kazuhiro Yanagi

124

125

126

127

3P-16

128

Applications of nanotubes
3P-17 Passivation with Parylene-C in carbon nanotube thin-film transistors* Yuto Shimasaki, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

129

3P-18

Numerical Simulation on Thermoelectric Power of Carbon Nanotubes Modified by
Diazonium Salts* Nayu Araki, Takahiro Yamamoto

130

3P-19

Coarse-grained modeling of free thermal vibrations of singled-walled carbon
nanotubes* Heeyuen Koh, Yuta Yoshimoto, Junichiro Shiomi, Shohei Chiashi,
Shigeo Maruyama

131

Formation and purification of nanotubes
Growth Mechanism of (6,5) Carbon Nanotube on the Basis of Vibronic Coupling
Density Analysis* Tomohiro Nishikawa, Tohru Sato, Naoki Haruta, Takeshi Kodama, Yohji Achiba

3P-20

3P-21

Synthesis and characterization of one-dimensional heterostructures* Yongjia Zheng, Yang Qian, Ming Liu, Akihito Kumamoto, Yuichi Ikuhara,
Anton Anisimov, Esko I. Kauppinen, Shohei Chiashi, Taiki Inoue, Rong Xiang,
Shigeo Maruyama

xxxii

132

133

September 13th, Thu.
3P-22

Growth of vertically-aligned single-walled carbon nanotubes having small diameters
using Ir catalysts in alcohol gas source method* Takuya Okada, Kamal Sharma, Tomoko Suzuki, Takahiro Saida,
Shigeya Naritsuka, Takahiro Maruyama

134

3P-23

Relationship between Catalysts and Diameter of Single-Walled Carbon Nanotubes* Akio Nakano

135

Graphene synthesis
In situ synchrotron X-ray diffraction study of precipitation of multilayer graphene from 136
Ni catalyst* Jumpei Yamada, Yuki Ueda, Shun Takenaka, Takahiro Maruyama,
Shigeya Naritsuka

3P-24

Applications of graphene
Mechanism of on/off improvement of graphene nanoribbon transistors synthesized byadvanced plasma CVD* Noritada Ogura, Hiroo Suzuki, Toshiro Kaneko, Toshiaki Kato

3P-25

Properties of graphene
3P-26 Hydrogen adsorption on atomic vacancies in Epitaxial graphene toward Hydrogenstorage* Yoshinori Obata, Koichi Kusakabe, Gagus Sunnarionto, Toshiaki Enoki,
Isao Maruyama, Tomoaki Nishimura, Kazuyuki Takai
3P-27

Plasmon Resonance-Induced Electronic Transition in Graphene
Jinjiang Zhang, Ruifeng Zhou, Hiro Minamimoto, * Kei Murakoshi

Atomic Layers
Band gap modulation by chiral phonon oscillations in transition metal dichalcogenides* Ahmad R. T. Nugraha, Nguyen Tuan Hung, Riichiro Saito

3P-28

137

138

139

140

3P-29

Improved interlayer coupling in suspended MoS2/WS2 van der Waals heterostructures* Kana Kojima, Hong En Lim, Takahiko Endo, Yu Kobayashi, Yutaka Maniwa,
Yasumitsu Miyata

141

3P-30

Electric Double Layer Transistors of CVD-grown monolayer InS and InSe
* Jiang Pu, Han-Ching Chang, Chien-Liang Tu, Kuang-I Lin, Chien-Nan Hsiao,
Chang-Hsiao Chen, Taishi Takenobu

142

3P-31

Chalcogen substitution in monolayer transition metal dichalcogenides* Hiroshi Shimizu, Hong En Lim, Takahiko Endo, Yu Kobayashi, Yutaka Maniwa,
Yasumitsu Miyata

143

xxxiiiSeptember 13th, Thu.
3P-32

Energetics and electronic structures of MoS2 nanoribbons* Hisaki Sawahata, Mina Maruyama, Susumu Okada

144

3P-33

Fabrication and transport properties of PN diodes based on monolayer MoS2 /WSe2
vertical heterostructures* Shintaro Yoshimura, Yu Kobayashi, Takahiko Endo, Hong En Lim,
Yutaka Maniwa, Yasumitsu Miyata

145

3P-34

Resonance characteristics of the cantilevered BN by electrostatic actuation* Daiki Yoshikawa, Kuniharu Takei, Takayuki Arie, Seiji Akita

146

Vibrational spectra of methylated forms of the cytosine in the region specific tohydrogen bonding relative to graphene pore interaction* Tatiana Zolotoukhna, Toshihito Nitta

147

Bio
3P-35

Other topics
First-principles study of magnetism in vanadium selenide thin films* Mohammad Saeed Bahramy, Masaki Nakano, Satoshi Yoshida, Yue Wang,
Hideki Matsuoka, Yuki Majima, Yuta Ohigashi, Yuta Kashiwabara, Masato Sakano,
Kyoko Ishizaka, Yoshiro Iwasa

3P-36

148

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:15 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Special Lecture ( 15:15-15:45 )3S-9
Ab Initio Study on Chemical and Optical Properties of Single-Wall Carbon Nanotubes
Adsorbed by Atoms and Molecules* Mari Ohfuchi
General Lecture ( 15:45-17:00 )Atomic Layers ・ Formation and purification of nanotubes ・ Applications of graphene
3-6pH-dependent photoluminescence of monolayer transition-metal dichalcogenides in an
aqueous solution* Wenjin Zhang, Kazunari Matsuda, Yuhei Miyauchi
3-7Single-walled carbon nanotubes co-axially wrapped with mono- and few-layer boron
nitride nanotubes and beyond* Rong Xiang, Taiki Inoue, Yongjia Zheng, Akihito Kumamoto, Yuichi Ikuhara,
Ming Liu, Yang Qian, Shohei Chiashi, Esko Kauppinen, Shigeo Maruyama

xxxiv

9

35

36

September 13th, Thu.
3-8

Quantum Wells due to Electron-Phonon Interactions in Isotopically Layered DiamondSuperlattices* Yuki Bando, Masayuki Toyoda, Takashi Koretsune, Susumu Saito

37

3-9

Superior thermal conductivity enhancement of polymer composites with bioinspired
graphene architecture* Cheng-Te Lin

38

3-10

Visible-light-induced photodecarbonylation of alpha-diketone-type large acene
precursors on Au(111) surface* Hironobu Hayashi, Hiroko Yamada

39

xxxv

特別講演
Special Lecture

1S – 1 ～ 1S – 3
2S – 4 ～ 2S – 6
3S – 7 ～ 3S – 9

1S-1
Near-Infrared Photoluminescent Carbon Nanotubes for
Imaging Brown Adipose Tissue
Masako Yudasaka
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology,
Tsukuba, Ibaraki 305-8565, Japan
Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan

Near-infrared (NIR) photoluminescent single-walled carbon nanotubes (CNTs) are effective
bio-imaging agents, because the NIR light absorption and scattering in the body are weak, andautofluorescence intensity is low in NIR region. The CNT probes are studied for the vascularimaging in most cases; however, besides the vascular systems, they can also image brown
adipose tissues (BATs), heat productive fats, by optimizing the CNT surface coating materials[1]. Moreover, the BAT imaging with CNTs reflects the body condition, namely, BATs offasted mice were more brightly imaged by CNTs than those of non-fasted mice. Its
mechanism is that the fasting induced the collagen bands disorders in the extracellular matrix
as confirmed by the histological observation and gene analysis, and the collagen bands
disorders resulted in the vascular permeability enhancement, therefore, the increase of
extravasation of CNTs in BATs. These phenomena are difficult to be found without using
CNTs, and these newly found phenomena may suggest another mechanism for the organisms
to survive the starving.
As our study shows, CNTs are more valuable imaging agents than so far believed, especiallyas a probe for the flow dynamics in sub-tissue levels. Comparing with dye imaging agents,
CNTs can stay in parenchyma of various organs for longer periods perhaps mainly due to theunique sizes and shapes, which enables to trace the flow movement in the parenchyma. For
such studies, an essential equipment is the NIR fluorescent microscope. It is available now but
needs more improvement to observe CNTs in individual cell. With the advances in thedevelopment of NIR fluorescent microscope as well as the CNT dispersion studies, CNT
imaging probe could reveal the unknown phenomena in the body and contribute to reveal themechanism of diseases, supporting the development of therapy methods.
[1] M. Yudasaka et al. Sci. Rep. 2017; 7: 44760.
Corresponding Authors: M. Yudasaka
E-mails: m-yudasaka@aist.go.jp

-1-

1S-2
Advanced STEM-EELS characterization of low-dimensional materials○Ryosuke Senga1
1

Nanomaterial research institute, AIST, Tsukuba 305-8565, JapanThe development of a monochromatic electron source for transmission electron
microscopy (TEM) has pushed up the energy resolution to better than a few tens of
millielectron volts, allowing us to identify the absorption peaks for optical and vibrational
excitations involving the quantum effects by electron energy-loss spectroscopy (EELS) [1-4].
Therefore we can investigate the exciton behavior of a quantum object with a nanometer-scale
resolution. In this study, the full range information of optical constants from an individualcarbon nanotube with specific chirality has been successfully extracted by combining theoptical absorption and EELS data [4]. The optical conductivity extracted from an electronenergy-loss spectrum for a certain type of defect presents a characteristic modification near
the lowest excitation peak (Fig. 1). The line-width of exciton peak shows a variety ofbroadening at different defect sites and suggests different degrees of shortening of its lifetime.
Such local modulations of excitation behaviours at defects, which are the most essential
factors for optoelectronic applications, have been discussed for long time but no experimental
proof of the influence of different defects was available. Therefore our findings would be
useful for further study to quantify the optoelectronic behaviors of nanoscale devices.

Fig. 1 High resolution EELS on an individual carbon nanotube. (a) Schematic of the experimental condition.
The optical constants including optical conductivity as shown in (b) are extracted from EEL spectra obtained
from individual defects through the Kramers-Kronig transformation (KKT).
[1] O. L. Krivanek et al., Nature 514, 209 (2014).
[2] R. Senga, T. Pichler and K. Suenaga, Nano Lett. 16, 3661 (2016).
[3] F. S. Hage, T. P. Hardcastle, A. J. Scott, R. Brydson and Q. M. Ramasse, Phys. Rev. B 95, 195411 (2017).
[4] R. Senga, T. Pichler, Y. Yomogida, T. Tanaka, H. Kataura and K. Suenaga, Nano Lett. 18, 3920 (2018).
Corresponding Author: R. Senga
Tel: +81-29-862-6518
E-mail: ryosuke-senga@aist.go.jp

-2-

1S-3
Supramolecular doping of carbon nanotubes○Yoshiyuki Nonoguchi1,21Division of Materials Science, Nara Institute of Science and Technology, Ikoma 630-0192, Japan
2

JST PRESTO, Kawaiguchi 332-0012, Japan

Doping is a fundamental procedure in the ongoing investigation of the transport propertiesof conductors and semiconductors including carbon nanotubes. The carrier injection to carbon
nanotubes modulates carrier concentration and polarity, which is essential for designing
applications in carbon nanotube transistors, photovoltaics, and thermoelectrics. We havesought to elucidate the requirements for, and current challenges in, the doping of carbon
nanotube films, particularly for studying their thermoelectric properties. This talk presents the
elucidated principles for the chemical doping of carbon nanotubes and the stabilization of
doped carbon nanotubes [1-7]. Supramolecular interactions are used for converting carbon
nanotube films to their air-stable doped forms, and applying these doped films in thedevelopment of thermoelectric generators.
[1] Y. Nonoguchi et al. Sci. Rep., 3, 3344 (2013).
[2] Y. Nonoguchi et al. Adv. Funct. Mater., 26, 3021 (2016).
[3] Y. Nonoguchi et al. Chem. Asian J., 11, 2423 (2016).
[4] Y. Nonoguchi et al. Small, 13, 1603420 (2017).
[5] M. Nakano et al. Small, 13, 1700804 (2017).
[6] Y. Nonoguchi et al. Chem. Commun., 53, 10259 (2017).
[7] Y. Nonoguchi et al. J. Mater. Chem. A, DOI: 10.1039/C8TA03948H (2018).
Corresponding Author: Y. Nonoguchi
Tel: +81-743-72-6028, Fax: +81-743-72-6179,
Web: http://mswebs.naist.jp/LABs/kawai/index.html
E-mail: nonoguchi@ms.naist.jp

-3-

2S-4
Separation of single-wall carbon nanotubes by gel column chromatography
and their applications.
○Takeshi Tanaka
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Ibaraki 305-8565, Japan

Single-wall carbon nanotubes (SWCNTs) are promising material for various applications by
their superior mechanical, electrical, optical properties. For the electrical and opticalapplications, separation of semiconducting SWCNTs from metallic ones is very important. We
have developed the separation method of metallic/semiconducting and single-chirality
semiconducting SWCNTs for the past decade. In this presentation, I will show the recent
progress on the separation and scientific research and various applications using separated
SWCNTs. Large-scale separation of single-chirality semiconducting SWCNTs was achieved
using triple-mixed surfactant system on gel column chromatography [1]. This method could
separate even enantiomers of single chiral semiconducting SWCNTs at high purity [2]. The
separated SWCNTs enabled us to investigate excitonic band structure of semiconducting
SWCNTs [2], enantiomeric purity of SWCNTs [3], and local optical properties of individual
semiconducting SWCNT [4] as basic science. The separated semiconducting SWCNTs werealso used for various applications, such as biological imaging [1,5], room-temperature singlephoton emitter [6], and chemical sensors [7,8]. Details will be discussed in the presentation.

[1] Y. Yomogida, T. Tanaka, M. Zhang, M. Yudasaka, X. Wei, and H. Kataura, Nature Commun., 7, 12056 (2016).
[2] X. Wei, T. Tanaka, Y. Yomogida, N. Sato, R. Saito, and H. Kataura, Nature Commun., 7, 12899 (2016).
[3] X. Wei, T. Tanaka, T. Hirakawa, Y. Yomogida, and H. Kataura, J. Am. Chem. Soc. 139, 16068 (2017).
[4] R. Senga, T. Pichler, Y. Yomogida, T. Tanaka, H. Kataura, and K. Suenaga, Nano Lett., 18, 3920 (2018).
[5] M. Yudasaka, Y. Yomogida, M. Zhang, T. Tanaka, M. Nakahara, N. Kobayashi, Y. O. Ogura, K. Machida, K.
Ishihara, K. Saeki and H. Kataura, Sci. Reports, 7, 44760 (2017).
[6] X. He, N. F. Hartmann, X. Ma, Y. Kim, R. Ihly, J. L. Blackburn, W. Gao, J. Kono, Y. Yomogida, A. Hirano, T.
Tanaka, H. Kataura, H. Htoon and S. K. Doorn, Nature Photonics 11, 577 (2017).
[7] S. Ishihara, C. J. O'Kelly, T. Tanaka, H. Kataura, J. Labuta, Y. Shingaya, T. Nakayama, T. Ohsawa, T. Nakanishi,
and T. M. Swager, ACS Appl. Mater. Interfaces 9, 38062 (2017).
[8] S. Ishihara, J. Labuta, T. Nakanishi, T. Tanaka, and H. Kataura, ACS Sens. 2, 1405 (2017).
Corresponding Author: T. Tanaka
Tel: +81-29-861-2903, Fax: +81-29-861-2786,
Web: https://staff.aist.go.jp/tanaka-t/index.html
E-mail: tanaka-t@aist.go.jp

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2S-5
Determination of temperature distribution on a carbon nanotube
by transmission electron microscopy
Michihiro Hashimoto1, ○Kaori Hirahara1, 2
1

2

Department of Mechanical Engineering, Osaka University, Suita 565-0871, Japan
Department of Physics, Graduate School of Science Tohoku University, Sendai 980-8578, Japan

In previous studies, we focused on Joule-heating-assisted structural modulation ofindividual carbon nanotubes (CNTs) by in-situ transmission electron microscopy with ananomanipulator system [1–6]. For example, plastic deformation of a CNT requires heat
supply for cutting or reconnecting carbon–carbon bonds. Various type of processes, such as
bending [1], cutting, sharpening [2], curing [3], superplastic elongation [4], and shrinking [5],have been carried out, and the results of those studies suggested that the amount of heat
supplied is the one of the most important parameters governing the final structure of the
product after the process. In addition, we have studied the filling process of metal
nanoparticles in the hollow spaces of CNTs and found that the key factor controlling particle
motion is the formation of a temperature gradient [6]. Therefore, it is essential to understandhow this temperature gradient is formed for understanding the atomistic-level energetics of
those processes. A few simple cases, for example, when a CNT is bridged between two large
substances, have been discussed based on a model that describes the temperature distribution
by using the one-dimensional equation of heat conduction assuming that both ends of the
CNT are at room temperature. However, most practical cases are considerably more
complicated. For example, it has been empirically shown that shorter CNTs are often difficult
to process than longer ones. The degree of heat conductance at the interface between CNTs orat the CNT–substrate interface should be considered as well. In the metal loading processreported previously, a temperature gradient was created by connecting a CNT of diameter 2–4
nm to the tip of a thicker CNT of diameter ~20 nm. The maximum temperature is at the centerof the thinner CNT [6], but it remained unclear as to how the gradient was formed in theactual system. In this study, we tried to visualize the temperature distribution of a single CNT
during processing under heat supply by using metal nanoparticles as the thermometer.
Multi-walled CNTs were supported on the edge of a thin silicon tip or on microgrids for TEM
observation, and metal particles of diameter 5–20 nm were vacuum deposited on these CNTs.
In the TEM, a platinum (or platinum-decorated silicon) probe was connected to the tip of a
selected single CNT by operating the nanomanipulator. The bridged CNT was heated by Joule
heating or by using a microheater equipped on the specimen stage, and structural changes in
the CNT and metal particles with increasing temperature were monitored.
This work was supported by Research Grants in Natural Sciences of the Mitsubishi
Foundation and JST CREST Grant Number JPMJCR1715, Japan.
[1] H. Somada et al., Jpn. J. App. Phys. 46 1055 (2007).
[2] H. Maruyama et al., App. Phys. Ex. 3, 0255101 (2010).
[3] S. Itaya et al., Jpn. J. App. Phys. 51 06FD22 (2012).
[4] K. Hirahara et al. App. Phys. Lett. 97, 129903 (2010).
[5] K. Hirahara et al. Abstract of the 18th international microscopy congress (IMC 2014), MS-2-P-2898.
[6] R. Bekarevich, et al., Nanoscale 8, 7217 (2016); R. Bekarevich et al., J. Phys. Chem C 121, 9606 (2017).
Tel: +81-6-6879-7815, Fax: +81-6-6879-7815,
Web: http://www-ne.mech.eng.osaka-u.ac.jp/
E-mail: hirahara@mech.eng.osaka-u.ac.jp

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2S-6
Growth of spin-capable MWCNT forest and applicationof aligned CNT assemblies
Yoku Inoue
Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561, Japan

Dry-spin capability of carbon nanotube (CNT) forest has been attracting much interest
because it enables very rapid unidirectional alignment of CNTs in large scale structures
including yarns [1] and sheets [2]. Such CNT structures are expected to be used in wide variety
of applications. We have been researching on the growth of dry-spin capable (spinnable) CNT
forest and applications of the large scale CNT structures. The spinnable CNT forest requires
strong van der Waals interaction between neighboring CNTs over a substrate. From such forest,
continuous web is drawn out. Since all the CNTs are aligned in the drawn direction, fabricatedyarns and sheets show high mechanical, electrical and thermal properties.
Our high density CNT forests are grown by catalytic chemical vapor deposition (CVD) on asubstrate. FeCl2 is used as a precursor of Fe catalyst nanoparticles [3]. The grown CNT has amulti-walled structure. Areal density is about 1010cm-2 which allows all the CNTs bundled overthe substrate and it results in high spinnability as shown in Fig.1. Several millimeter-long CNTs
are connected each other and it forms a meter-long web. A CNT yarn was fabricated by twistinga CNT web in the same manner as conventional yarns. We found that those yarn properties arestrongly influenced by CNT diameter, and smaller diameter CNTs result in higher electrical andmechanical properties in the yarns.
By stacking CNT webs, a unidirectionally aligned CNT sheet is formed (Fig.2). The sheet isrobust and flexible, and acts as a preform for fabricating unique CNT-based applications,
including structural and functional composite materials. On the other hand, when CNTs arecomposed in elastic polymer, it acts as a strain sensor [4]. Movements of nano-sized CNT-CNT
contacts appear as variation of resistance of the composite. Highly aligned CNT structures by
dry-spinning have been emerging as a key technology to bring CNT into industry.
[1] A. Ghemes et al., Carbon 50, 4579 (2012).
[2] Y. Inoue et al., Carbon 49, 2437 (2011).
[3] Y. Inoue et al., Appl. Phys. Lett. 92, 213113 (2009).
[4] K. Suzuki et al., ACS Sensor 1,817 (2016).
Corresponding Author: Y. Inoue
Tel: +81-53-478-1356
Web: http://cnt.eng.shizuoka.ac.jp/
E-mail: inoue.yoku@shizuoka.ac.jp

Fig. 2 Unidirectionally aligned CNT sheet
is fabricated by stacking CNT webs.

Fig. 1 CNT web is drawn from a dry-spin
capable MWCNT forest.

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3S-7
Flexible and transparent energy harvesters with carbon nanotube thin films
Yutaka Ohno
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

Energy harvesting technologies, which harvest electricity from small energy sources existingin environment such as thermal energy, mechanical vibration, electromagnetic wave, fluidic
energy, and so on, have been attracting much attention as the power source of the IoT devices
distributed in various places. Carbon nanotubes (CNTs) are considered to be an importantmaterial for such energy harvesters, especially, for wearable self-powered device applications
because of their excellent flexibility and stretchability. In this presentation, after reviewing the
progress of energy harvesting technologies, recent results from our research on
flexible/stretchable and transparent CNT-based energy harvesting sheets will be introduced.
Triboelectric generators, utilizing the contact electrification and electrostatic induction, area kind of mechanical energy harvester. [1] By using carbon nanotube thin films that was covered
with polydimethylsiloxane (PDMS), we have realized transparent and stretchable triboelectric
generators. The output power as high as 8 W/m2 was achieved by a surface treatment with CF4
plasma. Some demonstrations such as driving 100 blue LEDs with a 5x5 cm2 triboelectric
generator, a generator-equipped gloves lighting with hand claps, and so on will be shown in thepresentation.
Voltage generation from fluidic energy with a CNT thin film will also be presented. The
generator consists of a CNT thin film formed on a plastic thin film and two electrodes formedon the both edge of the CNT thin film. When the droplets of the electrolyte solution moves on
the CNT thin film, voltage generation takes place. The voltage generation phenomenon waspreviously reported with graphene. [2] Through the modeling of the voltage generation
phenomenon, we found out that the thin film of purified semiconducting CNTs generates muchhigher output power than graphene does. A large area (15x15 cm2) generator sheet fabricatedwith the spray coating technique demonstrated output power of 1 W. We also demonstrated
voltage generations from raindrops and waves, respectively.
Acknowledgment: The author thanks to Prof. H. Kataura of AIST, Prof. H. Ago of Kyusyu
Univ., Prof. M. Ofuchi of Fujitsu Lab., collaborators of Nagoya Univ., and Meijo Nano Carbon
Co., Ltd. for the fruitful collaborations and discussions. This work was supported by
JST/CREST (JPMJCR16Q2).
[1] Z. L. Wang, Mater. Today 20, 74 (2017).
[2] J. Yin et. al., Nat. Nanotechnol. 9, 378, (2014).

Corresponding Author: Y. Ohno
Tel & Fax: +81-52-789-5387
Web: http://qed63.qd.nuqe.nagoya-u.jp/
E-mail: yohno@nagoya-u.jp

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3S-8
Nano-carbon terahertz imagers:
Multi-view and super-resolution measurements and their applications tomaterials and biological non-destructive analysis○Yukio Kawano
Laboratory for Future Interdisciplinary Research of Science and Technology, Department ofElectrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku,
Tokyo 152-8552, Japan

Sensing and imaging with terahertz (THz) waves have a great potential for the use in powerful
non-destructive inspections. My talk will present our recent developments of two types of THz
imaging methods: carbon-based THz flexible cameras [1-3] and plasmon-based near-field
spectroscopic imagers [4-6]. Although most real objects have various three-dimensional
curvatures, conventional THz imaging systems are mainly restricted to flat samples. We havedeveloped a wideband, flexible and portable THz camera based on an array of carbon nanotube
THz detectors, which has enabled multi-view THz inspections without using bulky systems.
The latter part of my talk is devoted to explain plasmonic structures that are useful forevanescent-field detection and analysis in a subwavelength region. In spite of large
availabilities, a main shortcoming of existing plasmonic devices is that they never show
resonant frequency tunability for fixed structures. I introduce novel multi-frequency plasmonic
structures and their applications to materials characterization and medical examination.
[1] D. Suzuki, S. Oda, and Y. Kawano, “A flexible and wearable terahertz scanner”, Nature Photonics 10, 809814 (2016).
[2] D. Suzuki, Y. Ochiai, and Y. Kawano, “Thermal device design for a carbon nanotube terahertz camera”, ACS
Omega 3, 3540–3547 (2018).
[3] D. Suzuki, Y. Ochiai, Y. Nakagawa, Y. Kuwahara, T. Saito, and Y. Kawano, “Fermi-level-controlled
semiconducting-separated carbon nanotube films for flexible terahertz imagers”, ACS Applied Nano
Materials 1, 2469–2475 (2018).
[4] Y. Kawano, “Chip-Based Near-Field Terahertz Microscopy”, IEEE Transactions on Terahertz Science andTechnology 6, 356-364 (2016). (Invited paper)[5] T. Iguchi, T. Sugaya, and Y. Kawano, “Silicon-immersed terahertz plasmonic structures”, Applied Physics
Letters 110, 151105-1-4 (2017).
[6] X. Deng and Y. Kawano, “Surface Plasmon Polariton Graphene Mid-Infrared Photodetector with MultiFrequency Resonance”, Journal of Nanophotonics 12, 026017-1-8 (2018).
Corresponding Author: Y. Kawano
Tel: +81-3-5734-3811, Fax: +81-3-5734-3811,
Web: http://diana.pe.titech.ac.jp/kawano/index.html
E-mail: kawano@ee.e.titech.ac.jp

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3S-9
Ab Initio Study on Chemical and Optical Properties of Single-Wall Carbon
Nanotubes Adsorbed by Atoms and Molecules○Mari Ohfuchi1
1

Fujitsu Labs., Atsugi 243-0197, Japan

Recently we can perform ab initio calculations for realistic models of chiral single-wallcarbon nanotubes (SWCNTs). In the chirality separation experiments, for example, (5, 4) and(6, 4) nanotubes show a distinct red-shifted luminescence peak below E11; howeverlarger-diameter (8, 6) nanotubes have no pronounced peak at the level. This phenomenon isunderstood by studying the chemical reactions between O2 molecules and SWCNTs with eachchirality using ab initio methods. We found that the energy barrier from the physisorption of
O2 to the chemisorption is lower than that of the reverse reaction for (5, 4) and (6, 4)
nanotubes, whereas the relation is opposite for (8, 6) nanotubes [1, 2]. One of the final
products for the chemisorption gives slightly narrower band gap than that of pristine CNTs.
For smaller-diameter (5, 4) SWCNTs, multiple emission peaks are also observed in addition
to the original E11 peak in the photoluminescence spectrum.
The red-shifted E11 luminescence, called E11*, is also observed from the SWCNTs exposed
to ozone and light, and has attracted attention because of their greater luminescence quantum
yield than that of pristine CNTs. In the recent bioimaging experiments, the E11*− emission
whose energy is lower than that of E11* increases its intensity with respect to E11* as theultraviolet (UV)/ozone irradiation time increases. To explain these experiments, weinvestigated the energetics and the optical transitions for complex O adsorption structures on(6,5) CNTs, including adsorption of two O atoms. We found two additional groups of opticaltransition levels for adsorption structures of two O atoms [3]. These results explain themultiple emission peaks and their irradiation time dependence in the photoluminescence (PL)spectra for CNTs oxidized by ultraviolet ozone, are also consistent with the PL measurementsof SWCNTs oxidized by O2 molecules during single chirality separation processes.
We also performed ab initio calculations for the adsorption of sodium dodecyl sulfate(SDS) surfactants onto (5, 5), (6, 5), and (10, 3) nanotubes to clarify the mechanism ofmetal/semiconductor separation of SWCNTs. How differently SDS surfactants behave on
metallic and semiconducting CNTs is one of the fundamental questions in the science andapplication of CNTs. We found that dodecyl sulfate (DS) ions are more likely to adsorb onto
SWCNTs than sodium (Na) ions or SDS molecules, whereas the adsorption energy of SDS
molecules becomes stronger as the diameter of the SWCNTs increases, the adsorption energyof DS ions for metallic (5, 5) CNTs is much stronger than those for semiconducting (6, 5) or(10, 3) CNTs, causing a larger aggregation number of DS ions on metallic SWCNTs and aseparation of SWCNTs by electronic type [4].
[1] M. Ohfuchi, J. Phys. Chem. C 119, 13200 (2015).
[2] X. Wei et al., J. Phys. Chem. C 120, 10705 (2016).
[3] M. Ohfuchi and Y. Miyamoto, Carbon 114, 418 (2017).
[4] M. Ohfuchi, J. Phys. Chem. C 122, 4691 (2018).
Corresponding Author: M. Ohfuchi
Tel: +81-46-250-8194
E-mail: mari.ohfuti@jp.fujitsu.com

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一般講演
General Lecture

1 – 1 ～ 1 – 12
2–1 ～ 2–7
3 – 1 ～ 3 – 10

1-1
Protein oxidation by carbon nanotubes is affected by metals originatingfrom the catalyst○Atsushi Hirano, Momoyo Wada, Takeshi Tanaka, Hiromichi Kataura
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Ibaraki 305-8565, Japan

As-grown carbon nanotube (CNT) materials potentially induce oxidation of proteins;
specifically, oxidation of protein sulfhydryl groups [1,2], leading to biotoxicity. However, effectof catalyst impurities contained in the CNT materials remains unclear. In this study, we foundthat the catalyst impurities along with CNTs induce oxidation of a sulfhydryl group, which werethen ascribed to metals originating from the catalyst impurities. Numerical simulations of theoxidation indicate that the metal ions can mediates the redox reaction between CNTs andsulfhydryl groups, the rate of which is greater than that of the direct redox reaction between
them. Both of CNTs and catalyst impurities are thus associated with their biological impacts interms of oxidative stress on proteins.
We used cysteine (Cys) as a model compound with a sulfhydryl group to examine theoxidation by CNT (HiPco) samples. Fig.1a shows absorption spectra of the CNTs under thedifferent conditions. Cys itself induced restoration of absorption spectrum, indicating reductionof the CNTs. However, the reduction was weakly but clearly suppressed in the presence of
EDTA that is a chelating agent of metals. These results suggest that the reduction of the CNTs
by Cys was mediated by coexisting
metals. In fact, the addition of ferric ion
led to obvious reduction of the CNTs in
the presence of Cys even though ferric
ion is oxidant. Consistent with thespectral measurement, time courses
profiles showed a steep increase inabsorbance at 1250 nm in the presenceof Cys and ferric ion (Fig.1b). We Fig. 1 Effect of iron ions on the redox reaction of the CNTs
proposed a kinetic reaction scheme for in the presence and absence of cysteine and EDTA. (a)the reactions (Fig.2a). Time courses of Absorption spectra of the CNTs in the S11 region. (b) Timethe redox reaction of the CNTs were courses of absorbance values at 1250 nm.
reproduced by numerical simulations
Cys Cys‐Cys, H
on the basis of the reaction schemek(Fig.2b). Thus, the iron-mediated redox
FeFe
reaction is predominant over the directk
redox reaction between CNTs and
k
CNT
CNT
sulfhydryl groups.
k
3+

0

2+

1
2

+

[CNT]
[CNT]+[CNT+]+

3[1] A. Hirano et al. J. Phys. Chem. Lett, 8, 5216 (2017).
[2] A. Hirano et al. Nanoscale, 9, 5389 (2017).
Corresponding Author: A. Hirano
Tel: +81-29-849-1064, Fax: +81-29-861-2786,
Web: https://staff.aist.go.jp/hirano-a/index.html
E-mail: hirano-a@aist.go.jp

k4

Cys‐Cys, H+ Cys

Fig. 2 Numerical simulations of the redox reactionsof Cys with CNTs mediated by iron ions. (a) A
proposed reaction scheme with reaction rate
parameters (k). (b) Time courses of fractional
concentrations
ofthereduced
CNTs([CNT]/([CNT]+[CNT+])) under the different
conditions.

- 11 -

1-2
Complete Degradation of Carbon Nanomaterials
by Using Hypochlorite
Minfang Zhang1*, Mei Yang1, Hideaki Nakajima1, Masako Yudasaka1, 2,
Sumio Iijima2, Toshiya Okazaki1
1

National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi,
Tsukuba, Ibaraki, 305-8565, Japan.

2

Faculty of Science & Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku,
Nagoya 468-8502, Japan.
Corresponding author: m-zhang@aist.go.jp

Carbon nanomaterials (CNM) containing carbon nanotubes (CNTs), carbon nanohorns andgraphenes have been applied in a wide range of fields such as materials, electronics, energy
storages, and biomedicine. More and more CNMs are produced and CNM-containing
products are appearing in our daily life. It is estimated that the annual global market of only
CNTs is the order of hundreds of tons now. With the increase of CNM industrialization, more
and more CNM-contained wastewater would appear in many institute laboratories andindustrial companies. On the other hand, the toxicity of CNM is still unclear and someadverse effects on human health have been reported. CNM-containing wastewater must be
purified before being released into the environment and related rules or treatment processneed to be urgently established. Unfortunately, no method has been reported so far. In thisstudy, we have developed a simple method to eliminate CNM involved in industrial orlaboratory wastewater using sodium hypochlorite. Hypochlorite has been considered to be a
key oxidant in enzyme-catalyzed degradation of CNTs [1-2]. We have treated CNTs aqueous
dispersions with sodium hypochlorite solution and found that CNTs can be degraded
completely into carbon oxides. Since sodium hypochlorite is environmentally friendly andfrequently used as a disinfectant or a bleaching agent in household cleaning, the method
proposed here would be practically useful in the purification of CNM-contained industrial
wastewater.
[1] B. L. Allen, G. P. Kotchey, Y. Chen, N. V. K. Yanamala, et al. J. Am. Chem. Soc. 131, 17194 (2009).
[2] V. E. Kagan, N. V. Konduru, W. Feng, B. L. Allen, et al. Nature Nanotechnology 5, 354 (2010).

- 12 -

1-3
Brain Tissue Compatible Neural Probes Made from High Aspect Ratio(60:1) Free-Standing Carbon Nanotube Microelectrode Arrays○Guohai Chen1, Don N. Futaba1, Robert C. Davis2
1

CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba 305-8565, Japan2
Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602, USA

Vertically aligned carbon nanotubes (VACNTs or forests) have obtained much attention due
to its unique set of characteristics, such as long length, good alignment, and high specificsurface area. As such, they have demonstrated numerous applications spanning fromsupercapacitors, dry adhesive, field emitters, through silicon vias, yarns, etc. Importantly, they
have been shown as excellent candidates for electrodes/microelectrodes due to their
combination of electrical conductivity, mechanical compliance, and surface area. However, due
to mechanical requirements for VACNTs synthesis [1-2], directly growing high aspect ratio andfree-standing VACNT posts (as microelectrodes) is challenging.
Here, we present the fabrication of a CNT-based neural probe using high aspect ratio (60:1)
posts of CNT forests. The arrays of millimeter-tall, high aspect ratio, free-standing VACNT
posts were synthesized through the assistance of a sacrificial CNT support structure (“hedge”).
As a result, individual posts of millimeter-height and ~20 m diameter were achieved. The
electrochemical detection characterizations to both methyl viologen and dopamine were
investigated using an individual VACNT post microelectrode [3]. In addition to the detectionof the characteristic peaks, the VACNT microelectrode also showed fast-electrochemical
response. Compared with conventional metal electrode post arrays, our CNT post arrays possessmuch more mechanical compliance with human tissue to avoid tissue damage/inflammation as
well as higher surface to improve detection sensitivity. Our results represent one approach toovercome synthetic limitations to fabricate challenging structures.

[1] G.H. Chen et al. ACS Nano, 7 (11), 10218 (2013).
[2] G.H. Chen et al. Nanoscale, 8 (1), 162 (2016).
[3] G.H. Chen et al. ACS Biomater. Sci. Eng., 4 (5), 1900 (2018).
Corresponding Author: G.H. Chen
Tel: +81-29-861-4416
E-mail: guohai-chen@aist.go.jp- 13 -

1-4
Formation and Photodynamic Behavior of Transition Metal
Dichalcogenide–Fullerene Nanohybrids on Semiconducting Electrodes○Tomokazu Umeyama1, Baek Jinseok1, Hiroshi Imahori1,2
1

Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto
615-8510, Japan
2
Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Kyoto 606-8501,
Japan

Nanohybrid composites of C60 aggregates with transition metal dichalcogenide (TMD)
nanosheets such as MoS2 and WS2 have been constructed by injecting a poor solvent,acetonitrile (MeCN), into the mixed dispersion of TMD and C60 in a good solvent,N-methylpyrrolidone (NMP). Furthermore, the composite films, where the TMD nanosheets
are decorated with thin layers of C60 molecules, have been formed onto SnO2 semiconducting
electrodes by the electrophoretic technique using the composite aggregate dispersion in
NMP/MeCN (Figure 1) [1].
(C60)n(TMD+C60)melectrophoretic
deposition

MeCN

TMD
in NMP (after sonication)

heat

FTO SnO2 NMP

in NMP/MeCN

FTO/SnO2/(TMD+C60)m

Figure 1. Formation and electrophoretic deposition of (MoS2+C60)m.

Time-resolved microwave conductivity (TRMC) measurements of the deposited materials
revealed that photoexcitation of the composites exhibited much increased transient
conductivities in comparison with single components of TMDs and C60, indicating that thenanosized heterojunction structure of TMD and C60 promoted charge separation (CS). In
addition, the decoration of the TMD nanosheets with C60 molecules hindered the undesirable
charge recombination (CR) between an electron in the electrode and a hole in the TMD
nanosheets. The accelerated CS between TMD and C60 and the suppressed CR due to thebarrier effect of C60 thin layers significantly enhanced the photocurrent generation efficiencies
in photoelectrochemical devices based on the MoS2–C60 and WS2–C60 composites up to 35%
and 23% of incident photon-to-current (IPCE) values at 400 nm. The increment of IPCE in
the device with the WS2–C60 composite was smaller than that with MoS2–C60 as a result of theinhomogeneous film structure originated from the strong interaction between WS2 and C60.
[1] J. Baek, T. Umeyama, W. Choi, Y. Tsutsui, H. Yamada, S. Seki, H. Imahori, Chem. Eur. J. 2018, 24, 1561.
Corresponding Author: T, Umeyama
Tel: +81-75-383-2568, Fax: +81-75-383-2571
Web: http://www.moleng.kyoto-u.ac.jp/~moleng_05/umeyama.html
E-mail: umeyama@scl.kyoto-u.ac.jp- 14 -

1-5
Observation of Edge States of Graphene by FEM and FIM
Yahachi Saito1*, Yuhdai Watanabe2, Tohru Hoshino2, and Hitoshi Nakahara2
1
2

Toyota Physical and Chemical Research Institute, Nagakute 480-1192, Japan
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan

Graphene is now attracting considerable attention as new material with two dimensionality
and its peculiar electronic structures. Electronic states at graphene edges exhibit peculiar
properties, e.g., localized states depending on the edge types (zigzag or armchair), and spinpolarization (ferromagnetic order) at zigzag edge [1]. Field emission patterns from an opengraphene edge show a striped pattern (or “lip pattern”) consisting of an array of streaked
spots; the direction of striation is perpendicular to the graphene sheet, and each stripe isdivided into two wings by a central dark band running parallel to the graphene sheet. The“lip pattern” is considered to reflect the symmetry of π orbitals at a graphene edge. In
addition to field emission microscopy (FEM), we have investigated graphene edges in atomic
scale by field ion microscopy (FIM), which is complementary to FEM and gives higher
spatial resolution than FEM.
Both FEM and FIM measurements are carried out using the same graphene edge. Typical
FEM and FIM images of the same graphene emitter are shown in Figs. 1 (a) and (b),respectively. The FEM image (Fig. 1 (a)) exhibits a “lip pattern” characteristic to a grapheneedge; array of two lobes elongated perpendicular to a graphene plane. The corresponding
FIM image (Fig. 1 (b)) reveals more detailded structures because of higher spatial resolution;
each streak in FEM is resolved into a pair of spots. The FIM image was taken using Ne as
imaging gas. The direction of a line joining paired spots in FIM is perpendicular to thegraphene plane, being similar to the case of FEM where streaks in FEM are elongated in the
direction perpendicular to the graphene plane. Both of the FEM and FIM patterns show amirror symmetry with a mirror plane along
the central dark band (parallel to thegraphene plane). Based on our previous
studies on FEM of carbon emitters [2], thespacing between adjacent streaks in FEM andFIM is presumed to correspond with that ofcarbon atoms at the graphene edge. The
image of paired bright spots extending toboth sides of a graphene plane are considered
to be formed by Ne atoms ionized inFig. 1 (a) FEM and (b) FIM images of a graphene edge.
proximate to an unoccupied π*-orbital at theedge, as illustrated in Fig. 2. Thus, the FIM
pattern is interpreted to represent a spatial
distribution of the unoccupied edge states.
[1] M. Fujita, K. Wakabayashi, K. Nakada, and K. Kusakabe,
J. Phys. Soc. Jpn. 65, 1920 (1996)[2] N. Yokoyama, K. Nakakubo, K. Iwata, K. Asaka, H.
Nakahara, Y. Saito, Surf. Interface Anal. 48, 1217 (2016)*Tel: +81- 561-57-9616, Fax: +81- 561-63-6302, E-mail:ysaito@toyotariken.jp- 15 -

Fig. 2 Schematic illustrating the origin of FIM images ofa graphene edge.

1-6
Effective tube-length and density dependences on electric and mechanical properties ofsingle-walled carbon nanotube fibers formed by wet-spinning○Naoko Tajima1, Takayuki Watanabe1, Takahiro Morimoto1, Kazufumi Kobashi1,
Ken Mukai1,2, Kinji Asaka1,2, Toshiya Okazaki1
1

CNT Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan
2
Inorganic Functional Materials Research Institute, National Institute of Advanced Industrial
Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan
Among many applications of carbon nanotubes (CNTs), the production of fibers composedof CNTs offers a potential for high-strength and lightweight materials that are also thermallyand electrically conductive. We have reported that the mechanical and electrical properties of
CNT fibers by the wet spinning method are influenced by both the length of the constituent
CNTs and the morphology of the fiber [1,2]. To elucidate the detailed mechanism, here wecomprehensively investigate the CNT effective length and fiber density dependences on theelectrical conductivity, fracture strength, and Young’s modulus of CNT fibers.
We used single-walled CNTs synthesized by the enhanced direct-injection pyrolytic
synthesis” method (eDIPS-CNTs) and dispersed them in a sodium taurodeoxycholate (TDOC)
or a sodium-cholate (SC) aqueous solution. The eDIPS-CNT dispersions were prepared via
three different dispersion methods: Homogenizer (a probe sonicator), Millser (Iwatani
IFM-800DG), and Nanovater® (Yoshida Kikai NV C-ES008) [2].
CNT effective length, G/D value, and particle size (Stokes diameter) distribution were
evaluated as CNT characteristics. The effective lengths are estimated according to the FIR
spectra [3,4]. Particle size distribution of the “dispersion is measured using disk centrifuge(DC24000, CPS Instruments Inc.), which is based on differential sedimentation according to
Stokes’ law. The fiber density was obtained from the linear density and the cross-sectional
area of the produced fibers.
The obtained electrical conductivities, fracture strengths and Young’s moduli of the fibers
were correlated well with the CNT effective lengths and the fiber densities, that is, CNT fibers
having long effective length and high density show better properties. The quantitative analysis
will be discussed in the symposium.
References[1] X. Wu et al., J. Phys Chem. C 120, 20419 (2016).
[2] X. Wu et al., Appl. Phys. Exp. 10, 055101 (2017).
[3] T. Morimoto et al., ACS Nano, 8, 9897 (2014).
[4] T. Morimoto and T. Okazaki, Appl. Phys. Exp. 8, 055101 (2015).
Corresponding Author: Toshiya Okazaki
E-mail: toshi.okazaki@aist.go.jp

- 16 -

1-7
Control of chemical modification of graphene surfacesby substrate surface modification with self-assembled monolayers
Keiichiro Ikeda1, ○Ryo Nouchi1,21Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8570, Japan
2
PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan

Ultimate thinness of graphene is one of the most prominent features in its structure. The
thinness enables us to change its characteristics by chemisorption of foreign atoms/molecules
and to modulate an electron density in graphene by field-effect gating. Therefore, it isexpected that the surface chemical modification of graphene can be controlled by such gating
method. We have demonstrated that the degree of surface chemical modification of graphene
is indeed controllable by electron density modulation of graphene [1,2]. In this study, weinvestigate on another methodology of field-effect gating, i.e., molecular gating by means ofmodification of the supporting substrate surface with a self-assembled monolayer (SAM). A
local electric field generated by electric dipoles of the constituent molecules of SAMs [3] isfound to control various chemical modification reactions of graphene.
We used two types of triethoxysilane molecules possessing antiparallel dipole moments.
Single layer graphene was mechanically exfoliated on a SiO2 substrate modified with SAMsof these molecules. Figure 1 shows results of molecular gate control of photochemical
reactions based on benzoyl peroxide [4] deposited on graphene. In the Raman spectra
acquired after UV irradiation, the D band, which is an indicator of the degree of chemical
modification, was discernible only in the spectrum of graphene on the CH3-SAM-modified
substrate. Graphene on the CH3 SAM should be more electron rich owing to the electrostatic
effect (molecular gating effect) from the adjacent positive charge. Thus, graphene becomes
more instable than the hole-rich one on the F SAM, leading to the higher reactivity. In thepresentation, we will discuss other chemical modifications such as gas-phase photo-oxidation
by atmospheric oxygen and liquid
liquid-phase
phase modification by aryl diazonium salt
salt.

Fig. 1 Raman scattering spectra acquired before and after 10-min UV irradiation to graphene supported by
SAM-modified SiO2 substrates. The D band appeared only in graphene on CH3-SAM-modified SiO2 (b).
[1] X. Fan, R. Nouchi and K. Tanigaki, J. Phys. Chem. C 115, 12960 (2011).
[2] N. Mitoma and R. Nouchi, Appl. Phys. Lett. 103, 201605 (2013).
[3] K. Yokota, K. Takai and T. Enoki, Nano Lett. 11, 3669 (2011).
[4] L. Haitao et al., J. Am. Chem. Soc. 131, 17099 (2009).
Corresponding Author: R. Nouchi
Tel: +81-72-254-8394, Fax: +81-72-254-8394,
Web: http://www.pe.osakafu-u.ac.jp/pe10/
E-mail: r-nouchi@pe.osakafu-u.ac.jp- 17 -

1-8
Mesoscopic Thermoelectric Measurements of a 2D Metal-Organic
Framework
Ryuichi Tsuchikawa1, Neda Lotfizadeh1, Shuwan Liu1, Nabajit Lahiri2, MacKenzie Lach1,
Celine Slam1, Janis Louie2, Vikram Deshapnde1
1Department of Physics and Astronomy, University of Utah, USA
2Department of Chemistry, University of Utah, USA

 (W/mK)

Copper benzenehexathiol (Cu-BHT) is a hybrid compound categorized as two-dimensional(2D) metal-organic frameworks (MOFs), in which organic ligands are linked by metal ions toform a layered thin film.
MOFs possess nanosized
0.4
pores in the crystal, and
0.3
applications to gas storage
has been proposed due to a
0.2
large surface to volume ratio.
The freedom in choosing a
0.1
different combination of0
metal ions and organic
0
80
160
240
320
ligands allows us to design
T (K)different MOFs using the Figure 1: SEM image of the Figure 2: The temperaturesame synthesis process [1,2]. device used for the thermal dependence of thermal conductivity
Among MOFs, CuBHT is a conductivity measurement. A thin of CuBHT
unique MOF because it film of CuBHT is suspended
exhibits unusually highelectrical conductivity [3]. We measured the thermal conductivity (κ), electrical conductivity(σ), and Seebeck coefficient (S) of thin flakes of Cu-BHT, and we found that the thermal
conductivity of MOFs is intrinsically suppressed due to its high porosity. This selective
suppression of phonons in a crystal can be utilized to improve the efficiency of thermoelectricenergy conversion, i.e., to improve the thermoelectric figure of merit, ZT = S2σT/κ, where T istemperature. Along with its high electrical conductivity, CuBHT has a potential to be the next
generation thermoelectric material.
[1] H. Nishihara, et al., J. Am. Chem. Soc. 135, 2462 (2013)[2] N. Lahiri, N. Lotfizadeh, R. Tsuchikawa, V. V. Deshpande, J. Louie, J. Am. Chem. Soc. 139, 19 (2017)[3] X. Huang, et al., Nat. commun. 6, 7408 (2013)
Corresponding Author: V. Deshpande
Tel: 801-581-6570
Web: https://sites.google.com/site/deshpandegrouputah/home
Email: vdesh@physics.utah.edu- 18 -

1-9In-situ measurement of WS2 crystal growth with Au dot nucleation control○Chao Li1, Tomoya Kameyama1, Toshiro Kaneko1, Toshiaki Kato1,2
1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2

JST-PRESTO

The discovery of graphene created a new era of two-dimensional (2D) material researchbecause of the ultrathin thickness, high mechanical flexibility, and unprecedented novel
optoelectronic properties. Nevertheless, the non-bandgap structure of graphene limits its
practical applications as semiconductor devices [1]. Transition metal dichalcogenides (TMDs)
known as another kind of 2D material, which possess monolayer structures as analogous
atomic thickness as graphene. TMDs are expected to be applied on various kinds ofsemiconductor devices because of the tunable bandgap structure by layer number control.
Especially, bright photoluminescence of TMDs makes them as the promising material for next
generation optoelectrical applications. To fabricate the high performance optoelectricaldevices, it is greatly urgent to synthesize highquality large size crystal [2]. However, theuncertain growth mechanism of TMDs makes it
difficult to realize the ultra-large size synthesisof single crystal TMDs.
In our study, for the sake of the first stage of
TMD growth mechanism elucidation, thequantitative estimation of TMD crystal growth
was precisely conducted by introducing ourunique nucleation control with Au-dot
technology. As the result, in-situ measurementof WS2 crystal growth has been successfully
realized (Fig.1 (a) and (b)). From the results ofin-situ measurements, the crystal growth speed
at the initial growth stage is found to reach up Fig. 1. (a) Low and (b) high magnification opticalto ~1.8×103 nm/s. It was also investigated that microscope image of WS2 after CVD. (c) Plots of
WS2 growth speed (v) as a function of crystal size
the growth speed attenuated with the crystal obtained by in-situ measurements. (d) Comparison ofsize increasing (Fig.1 (c)). The growth model experimental data and theoretically obtained fitting
was also created and the corresponding curve.
theoretical calculation was conducted. The
result showed that the experimental result obtained from in-situ measurements was precisely
fitted by the theoretical calculation (Fig.1 (d)), which means the validity of our establishedgrowth model.
[1] T. Kato and R. Hatakeyama: Nature Nanotechnology 7 (2012) 651.
[2] C. Li, Y. Yamaguchi, T. Kaneko, and T. Kato: Applied Physics Express 10 (2017) 075201.
Corresponding Author: C. Li
Tel: +81-22-795-7046, Fax: +81-22-263-9225,
E-mail: li15@ecei.tohoku.ac.jp- 19 -

1-10
Extraordinarily stable supercapacitor electrodes
with three-dimensional edge-free graphene walls○Keita Nomura1, Hirotomo Nishihara1, Tomoya Shimura1, Toshihiro Asada2, Naoya
Kobayashi2, Takashi Kyotani1
1

IMRAM in Tohoku University, Sendai 980-8577, Japan2
TOC Capacitors, Nagaoka 394-0035, Japan[1] Hirotomo Nishihara et al., Adv. Funct. Mater., 26 (2016), 6418-6427.
Corresponding Author: H. Nishihara
Tel: +81-22-217-5627, Fax: +81-22-217-5627,
Web: http://www.tagen.tohoku.ac.jp/labo/kyotani/index_e.html
E-mail: hirotomo.nishihara.b1@tohoku.ac.jp- 20 -

Capacitance retention / %Gas evalution / mmol g-1

Graphene is a two-dimensional (2D) material which has many fascinating features such as
high theoretical surface area and chemical stability. However, graphene sheets are easily
stacked by  interaction, resulting in the loss of such unique properties. Thus, assemblinggraphene sheets into 3D architectures especially equipped with mesopores without stacking has
been a challenge. Our group has developed a unique mesoporous carbon, graphene mesosponge(GMS, Fig. 1) [1], consisting mostly of single-layer graphene walls. In this work, wedemonstrate that GMS can be an extraordinarily stable electrode for supercapacitors.
GMS has been prepared according to the method previously reported[1]. As reference materials, activated carbon (YP50F) and reduced
graphene oxide (rGO) were used. BET surface areas of GMS, YP50F,
and rGO are 1800, 1650 and 450 m2 g-1, respectively. Fig. 2 shows thetotal amount of desorbed gases (H2, CO, CO2, and H2O) during atemperature programmed desorption (TPD) run. In the TPD analysis,
Graphene MesoSponge
graphene edge sites which are terminated by hydrogen or oxygen(GMS)
functional groups release the aforementioned gases, and therefore, Fig. 1 Illustration of GMS.
the total gas evolution shown in Fig. 2 represents a measure of the
12
10.9
10.85
amount of carbon edge sites. While YP50F and rGO have a large
10amount of edge sites and release a significant amount of gases,
8
GMS does not, indicating the edge-free property of GMS. This is6
advantageous to achieve an excellent stability for electrochemical
3.88
4applications. The stability of GMS for supercapacitors was
2
examined by using symmetrical two-electrode cells with a typical
0.11
organic electrolyte (1.5 M Et3MtNBF4/PC). The cells were kept
0
GMS YP50F rGO
under a high voltage (3.5 V) and a high temperature (60 °C). Thiscondition is really aggressive because general supercapacitors Fig. 2 The total gas evolution
using activated carbon with organic electrolyte are easily amounts of GMS, YP-50F andcollapsed over 3 V at room temperature. The capacitances of cells rGO during the TPD analysis up
were monitored by temporarily stopping the durability test and to 1800 °C.
100measuring galvanostatic charge/discharge curves (5 mA/g) at
80
25 °C. The capacitance retention of GMS is much better than thoseGMS
of YP50F and rGO (Fig. 3). Thus, GMS is a promising material
60
which enables a very high-voltage operation of supercapacitors.
40
YP50F

20
0

0

200

rGO

400 600
Time / h800

Fig. 3 Capacitance retention of
GMS, YP-50F and rGO during theaccelerated durability test under 3.5
V at 60 °C.

1-11Geometric and electronic structures of three-dimensional porous carbon
networks
Y. Fujii1, M. Maruyama1, and S. Okada1
1
Graduate School of Pure and Applied Science, University of Tsukuba, 1-1-1 Tennodai,
Tsukuba, Ibaraki305-8571, Japan
Physical properties of carbon allotropes and hydrocarbon materials are sensitive to their
network topology arising basically from orbital hybridization of constituent C atoms.
Diamond and graphene, which sorely consist of sp3 and sp2 C atoms, are an insulator and azero-gap semiconductor, respectively. Mixing of C atoms with different orbital
hybridizations endows the resultant covalent network with unique physical properties thoseare absent in the conventional allotropes or hydrocarbons. Indeed, our previous calculations
demonstrated that two-dimensional covalent hydrocarbon networks consisting of sp2 and sp3
C atoms produce a Kagome band and Dirac cone at or near the Fermi level, depending on the
shape and size of the sp2 hydrocarbon networks inserted between adjacent sp3 C atoms. In
this work, we aim to theoretically design 3D covalent network of C and hydrocarbon, byassembling sp, sp2, and sp3 hybridized C atoms in the tetrahedral symmetry, as the possible
structures of porous diamond networks, using the density functional theory with generalized
grained approximation.
Figures 1(a) and 1(b) show 3D networks consisting of sp and sp3 C atoms and sp2 and sp3hydrocarbons, respectively. As for the networks consisting of sp and sp3 C, the electronic
structure strongly depends on the length of sp C chain. As for the hydrocarbon networks
consisting of sp2 and sp3 C atoms, the networks are semiconductors with a direct bandgap,
which depends on the length of sp2 hydrocarbon units. In contrast, regardless of the chain
length and hydrocarbons, they have the peculiar electronic structure near the Fermi level orband gap, which are characterized with a Dirac cone and two flat dispersion bands. Since
these networks have thetetrahedral

covalent

networks, they are expected
to possess high mechanicalstrength. However, owing
to the sp or sp2 C atoms
bridging sp3 C atoms, thenetwork possess moderate
or low Bulk modulus.

Fig. 1 Optimized structures of (a) a sp-sp3 C network and (b) a sp2-sp3hydrocarbon network. Dark gray, light gray, white spheres denote sp 3 C, sp/sp2
C, and H atoms, respectively.

Corresponding author: Y. Fujii (yfujii@comas.frsc.tsukuba.ac.jp)- 21 -

1-12
Development of combined ion trap ion mobility measurement system
Yudai Hoshino, Natsuki Terada, Fumiaki Uchiyama, Reona Miyamato, and ○Toshiki Sugai
Department of Chemistry, Toho University, Miyama 2-2-1 Funabashi, 274-8510, Japan
Ion mobility spectrometry (IMS) has been utilized to reveal novel structural information
on nanomaterials[1]. To enhance the capability of IMS we have been working on an ion trap
ion mobility (ITIMS) achieving long-term observation of nanomaterials up to 7 hours.
However the information obtained by the method is restricted to structural one with low
resolution. To get more information other measurement system should be combined together
with higher structural resolution. Here we present newly developed combined ITIMS system
to obtain optical and structural information with higher resolution.
The system consists of more than ten
DQP/RQJSDVV ILOWHU
ion traps for high-resolution IMS, and one
QPionization laser and 4 excitation lasers withwavelengths 266, 405, 450, 532, and 650 nm
EQP
QP
with exchange stage for optical measurements.
Nanomaterials such as graphene quantum dots
2EVHUYHGSDUWLFOH

PRYHPHQW

and polystyrene particles with a diameters of
46 nm and fluorescent dye were ionized by
the ionization laser and trapped in the system,and then were observed by a digital camera
recording their emission induced by the
excitation lasers on the exchange stage.
Excitation and emission spectroscopy of thetrapped nanomaterials were performed bychanging the excitation laser and long-passFQP
QP

8QREVHUYDEOH

GQP
QP

8QREVHUYDEOH

excitation

emission

optical filter located in front of the camera.
Fig. 1 up shows observed trace image ofcdab
the polystyrene particles through thelong-pass filter with the various excitation
Fig. 1. Observed Emission of Polystyrene bylasers together with the dye excitation
Developed System and Excitation and Emission
Spectra of 46 nm Polystyrene Particles with dye.
emission spectra. Apparently, when the
excitation laser wavelength is within the scope of the dye excitation region (a, b) (Fig.1 down),
the particle emission is observed whereas it is unobservable when out of the scope (c, d).
[1] T. Sugai et al., J. Am. Chem. Soc. 123, 6427 (2001).

TEL: +81-47-472-4406, E-mail: sugai@chem.sci.toho-u.ac.jp- 22 -

2-1
Controlled growth of multilayer h-BN using Ni-Fe alloy andits growth mechanism○Yuki Uchida1, Sho Nakandakari1, Kenji Kawahara2, Shigeto Yamasaki1,
Masatoshi Mitsuhara1, Hiroki Ago1,2
1

2

IGSES, Kyushu University, Fukuoka 816-8580, Japan
Global Innovation Center (GIC). Kyushu University, Fukuoka 816-8580, Japan

Multilayer h-BN has been widely recognized as an ideal substrate to bring out intrinsic
properties of 2D materials [1,2]. Catalytic CVD method is expected to produce large-area h-BN
films suitable for practical applications [3-5]. However,the uniform growth of multilayer h-BN is still achallenging issue, because it requires well controlled
dissolution and segregation processes of B and N atoms.
Recently, we have realized the uniform growth ofmultilayer h-BN using Ni-Fe alloy deposited on spinel bystabilizing the fcc structure and tuning the B, N
solubilities (Figure 1) [6]. Moreover, our h-BN
Fig. 1 Schematic growth model ofmultilayer h-BN on Ni-Fe alloy.
dramatically improved the optical property of WS2.
In this work, we systematically investigated the effect of crystal structure of Ni-Fe on thegrowth of h-BN. Interestingly, Ni-Fe/spinel(100) produced uniform multilayer h-BN, while
multilayer h-BN was not observed on Ni-Fe/spinel(111) (Fig. 2a,b). The multilayer h-BN grownon the Ni-Fe/spinel(100) showed a well-defined layered structure with an interlayer distance of~0.35 nm, corresponding to the h-BN structure (Fig. 2a inset). Based on electron back-scatter
diffraction (EBSD) analysis, we found that introducing borazine (B3N3H6) feedstock stimulates
the conversion of crystal plane from fcc(100) to fcc(111) in the Ni-Fe/spinel(100), whereas NiFe/spinel(111) shows no change of the crystal plane (Fig. 2c,d). We speculate that the packing
density of the crystal plane before the B3H6N3 supply is a key factor for the uniform segregationof multilayer h-BN. Our study presents that controlling surface crystal structure of the metal
catalyst is necessary for the synthesis of uniform multilayer h-BN.
(a)

(c)

(b)

(d)

Fig. 2 Optical micrographs of h-BN transferred from Ni-Fe/spinel(100) (a) and (111) (b) to SiO2/Si. Inset in(a) shows a cross-sectional TEM image of h-BN on Ni-Fe/spinel(100). EBSD images of Ni-Fe/spinel(100) (c)and (111) (d) before and after CVD.
[1] C. R. Dean et al., Nat. Nanotechnol., 5, 722 (2010). [2] M. Okada et al., ACS Nano, 8, 8273 (2014). [3] Y.
Uchida et al., Phys. Chem. Chem. Phys., 19, 8230 (2017). [4] H. Cho et al., Sci. Rep., 5, 11985 (2015). [5] S. M.
Kim et al., Nat. Commun., 6, 8662 (2015). [6] Y. Uchida et al., ACS Nano, 12, 6236 (2018).

- 23 -

2-2
Visualization of local defects affecting electrical transport properties oflarge area graphene films via lock-in thermography○Hideaki Nakajima1, Takahiro Morimoto1, Yoshiue Ikuta1, Yuki Okigawa1,
Takatoshi Yamada1, Kenji Kawahara2, Hiroki Ago2, and Toshiya Okazaki 1
1

National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565,
Japan
2
Global Innovation Center, Kyushu University, Fukuoka 816-8580, Japan

Large area graphene synthesis by chemical vapor deposition (CVD) method has rapidly
progressed for realizing scalable device applications. Nevertheless, the existence of local
defects seriously degrades its electrical transport properties. Although several experiments
based on scanning tunneling microscopy have shown the influence of defects [1], only thelimited area were investigated in those reports due to long measurement times. Recently, we
have developed a novel measurement technique “lock-in thermography” (LIT) enabling fastand precise imaging of electrical characterization for large area carbon materials [2, 3]. Here,
we demonstrate the visualization of local defects affecting electrical transport properties oflarge area CVD graphene films by LIT technique.
Figure (a) shows a fundamental concept of LIT. The bias voltage modulated at 25 Hz wasapplied to a single-layer CVD graphene with two electrodes, and the thermal radiation fromsample was two-dimensionally imaged. By using lock-in detection, Joule heat component
from the biased sample was detected separately from background heat storage.
An example of LIT image is indicated in Fig. (b). The white dashed lines correspond toedge of graphene, and domain boundary locations are identified as shown white arrows. The
heat generation behaviors of LIT are strongly exhibited at boundary sites 1 and 2. Bothboundaries show intense Raman D-bands (Fig. c), indicating that the observed thermalfeatures are derived fromboundary defects. In contrast,
LIT shows a featurelessthermal pattern at boundarysite 3. Because of no D-band
signature in the region, it isfound that there is a seamlesslocation. These results suggestthat the LIT successfully
images the electrical transport
properties
ofdomain Figure (a) Schematic diagram of LIT. (b) LIT images with aboundaries over a mm-sized single-layer CVD graphene epitaxially grown on a sapphire substrate.
The sample was transferred onto a quartz substrate. (c) Ramangraphene film within a spectrum at boundary locations 1-3.
reasonable time frame (10min.).
[1] Q. Yu et al., Nat. Mater. 10, 443 (2011). [2] T. Morimoto et al., The 52nd FNTG General Symposium, 2-4(2017).[3] H. Nakajima et al., The 54th FNTG General Symposium, 3-8 (2018).
Corresponding Author: Toshiya Okazaki
Tel: +81-29-861-4173 / E-mail: toshi.okazaki@aist.go.jp- 24 -

2-3
In Situ Study on Catalysts for Controlled Growth of Carbon
Nanotubes○Feng Yang, Yan Li

College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

The structure-controlled growth of single-walled carbon nanotubes (SWNTs) is an
important issue for their advanced applications. The catalysts play an essential role incontrolling the structure of the SWNTs [1, 2]. Revealing the role of catalyst in theworking environments is crucial for understanding the controlled growth mechanism.
We developed a family of tungsten-based intermetallic compounds for chirality specificgrowth of SWNTs. The Co7W6 intermetallic compounds have high melting points(2400 ○C) and very special crystal structure, acting as the structural templates withdesigned structures for growing SWNTs [3, 4].
Here, we demonstrated the structural and chemical stability of Co7W6 intermetallic
catalysts at atomic level when feeding with carbon at high temperature (700-1100 ○C).
This was made possible by the use of using a state-of-the-art aberration-correctedenvironmental transmission electron microscope (ETEM) combined with in situ
electron energy loss spectroscopy (EELS). We also established in situ synchrotron Xray absorption spectroscopy (XAS) operated in the atmospheric-pressure CVD anddemonstrated the stable local coordination structure of Co7W6. No carbide formation orcarbon diffusion induced structural change was observed from these in situ
characterization. Statistical in/ex situ measurements of the tube−catalyst interfaces
showed that all the caps and SWNTs are perpendicular to the plane of the Co7W6
catalysts. These results demonstrate that Co7W6 catalysts act as the stable structure
template for the chirality controlled growth of SWNTs.
Cobalt catalyzed the SWNT growth is generally believed to via a vapor–liquid–
solid mechanism. Using Co as a model catalyst, we elucidated the synergetic role
played by the cooperation of Co-Co3C in catalyzing CVD growth of SWNTs. We
recorded in situ and at the sub-angstrom level, the carburization of cobalt nanoparticle
and formation of Co3C play an essential role in the nucleation of carbon cap andconsequent growth by ETEM. These findings are crucial for the rational design ofcatalysts for high efficiently catalyzing SWNTs.
[1] V. Jourdain and C. Bichara. Carbon, 58, 2 (2013).
[2] M. Li, Y. Li et al. Top. Curr. Chem., 375, 29 (2017).
[3] F. Yang, Y. Li et al. Nature, 510, 522 (2014).
[4] F. Yang, Y. Li et al. Acc. Chem. Res., 49, 606 (2016).
Corresponding Author: Yan Li
Tel: +86-10-62756773, Fax: +86-10-62756773,
Web: http://old.chem.pku.edu.cn/page/liy/E-mail: yanli@pku.edu.cn- 25 -

2-4
Narrow-band thermal exciton radiation in single-walled carbon nanotubes○Taishi Nishihara1,2, Akira Takakura1,2, Yuhei Miyauchi1,2,3, and Kenichiro Itami1,2,4
1

JST-ERATO, Itami Molecular Nanocarbon Project, Nagoya University, Nagoya 464-8602, Japan.
2
Graduate School of Science, Nagoya University, Nagoya 464-8602, Japan.
3
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan.
4
Institute of Transformative Bio-Molecules (WPI-ITbM), Nagoya University, Nagoya 464-8602,
Japan.

A number of intriguing photophysics arising from many-body quantum correlations havebeen discovered in single-walled carbon nanotubes (SWNTs). It has been experimentally
revealed that excitons dominate the optical properties of SWNTs below room temperature. In
contrast, thermal radiation, which is one of the fundamental optical properties, remains
unclear because of some technical difficulties. The previous pioneering studies have reported
light emission spectra consisting of broad peaks from individual SWNTs under Joule-heating
conditions [1,2]. However, the carrier doping and current injection required to heat the
nanotubes may considerably modify their one-dimensional quantum correlation effects [3],and the origin of the peak features (whether they are band-to-band or excitonic transitions)still remains debatable [1,2]. In addition, the possibility of competing electroluminescencemechanisms, including ambipolar carrier injection and impact excitation, further complicatesthe interpretation of light emission phenomena during current injection.
Here, we report the fundamental thermal radiation
properties of intrinsic semiconducting and metallic
SWNTs (S- and M-SWNTs) [4]. Individual SWNTs
were suspended over an open slit in vacuum to suppress
energyexchangewiththesurroundings.
Continuous-wave laser irradiation was employed forheating SWNTs, which provided non-contact local
heating while retaining the neutral charge balance of
the SWNTs throughout the measurements. At 1,000–
2,000 K, an intrinsic S-SWNT emitted linearlypolarized, narrow-band near-infrared radiation (Fig. 1a),in contrast to its broadband radiation of a M-SWNT(Fig. 1b). We unambiguously confirmed that thisnarrow-band radiation is enabled by the thermal
generation of excitons using the distinctive spectral
difference between S- and M-SWNTs, and thesimultaneous observation of the thermal radiation andthe Rayleigh scattering spectra. In the presentation,
universal features of thermal radiation of
one-dimensional structures will be discussed.

Fig.1 a, Thermal radiation of S-SWNT. b,
Thermal radiation properties of S- and
M-SWNTs.

[1] D. Mann, et al., Nat. Nanotech. 2, 33 (2007).
[2] Z. Liu, A. Bushmaker, M. Aykol, S. B. Cronin, ACS Nano 5, 4634 (2011).
[3] Y. Miyauchi et al., Phys. Rev. B 92, 205407 (2015).
[4] T. Nishihara, A. Takakura, Y. Miyauchi, and K. Itami, Nat. Commun. accepted for publication.
Corresponding Authors: Y. Miyauchi, K. Itami
Tel&Fax : +81-52-789-5916
E-mail: miyauchi@iae.kyoto-u.ac.jp, itami@chem.nagoya-u.ac.jp- 26 -

2-5
Low-defective dispersion of SWCNTs by repetitive sonication process○Hiromichi Kataura, Mayumi Tsuzuki, Mariko Kubota, Tomoko Sugita, Guowei Wang, andTakeshi Tanaka
Nanomaterials Research Institute (NMRI), AIST, Tsukuba 305-8565, Japan

Structural defects produced in single-wall carbon nanotube (SWCNT) have been crucial
issue for developing high-mobility electronic devices. Since individually dispersed SWCNTs
are inevitable for high-purity metal/semiconductor separation, we need to use strong sonicationthat quickly introduces serious defects on the SWCNT wall. At the previous FNTG symposium,
we reported the effect of dissolved oxygen on the defect introduction to the SWCNT. In thispresentation, we report the repetitive dispersion process which highly reduces the defectintroduction. Recently, Noda et al. developed repetitive short-time dispersion and extraction
process [1]. This process works well for the application of high-quality conducive film.
However, it doesn’t work for metal/ semiconductor separation because SWCNTs obtained are
not individual. In this work, therefore, we have extended the method to obtain individuallydispersed SWCNTs using strong sonication and ultracentrifugation process.
In this work, we used two different SWCNTs raw HiPco (D~1 nm, NanoIntegris) and raw
EC1.5 (D~1.5nm, Meijo Nano carbon) without any purification. Soot of SWCNTs withconcentration of 1 mg/ml was introduced to the 0.5 wt % sodium cholate aqueous solution.
After short-time sonication, the solution was ultracentrifuged and collected upper 80%
supernatant as individual SWCNTs. The sediment was collected and introduced in the sodium
cholate aqueous solution and was sonicated and ultracentrifuged again for the second collection.
This repetitive sonication-collection process was examined for different sonication time.
Defects were monitored by Raman G/D ratio and photoluminescence intensity. AS a result, it
was found that G/D value simply depends on the total sonication time. However, the total
amount of individual SWCNTs obtained as supernatant was dependent on the number ofultracentrifugation. So that, shorter-time repetitive sonication process is better to get lower
defective SWCNT solution. This result looks trivial but details were somewhat complicated andmore interesting. We will show the latest results in the presentation.
Reference[1] H. Shirae et al., Carbon 91 (2015) pp. 20 - 29.
Corresponding Author: Hiromichi Kataura
Tel: +81-29-861-2551
Web: http://kataura.html.xdomain.jp/index.html
E-mail: h-kataura@aist.go.jp- 27 -

2-6
Electronic states of A3C60 in the Mott boundary viewed from electricaltransport○Katsumi Tanigaki1,2, Yuki Matsuda2 and Satoshi Heguri1
AIMR, Tohoku University, Katahira 2-1-1, Aoba, Sendai, 980-8577, Japan
Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aramaki,
Aoba-ku, Sendai 980-8578, Japan1

2

A similar Mott physics on unconventional superconductors, such as cuprates, Fe pnictides,
and organic conductors is now claimed for expanded C60 superconductors, and electron-electron(e-e) interactions are thought to be very important origin of its high Tc superconductivity. On
the other hand, the highest superconductivity surpassing the cuprates recently found in H2S
gives the discussion back to the electron-phonon (e-ph) mediated superconductivity forachieving high superconducting critical temperature (high Tc). The Fermi surface of A3C60(A=alkali metals) superconductors with expanded cell provides an intriguing research platform
for both e-e and e-ph interactions. However, being different from other unconventional
superconductors, electrical transport measurements had been very difficult for long years in
expanded A3C60 and made only for K3C60 and Rb3C60 with small cell size far apart from theMott boundary, and hitherto important scientific discussion has been made based on only
limited magnetic and optical probes. Here, we give intriguing first experimental results on
accurate electrical resistivity (ρ(T,P)) for a variety A3C60 with expanded under various
temperature (T) and pressure (P). Electrical transport was carefully measured with straddlingbetween the Mott insulator and the metallic/superconducting phase. A new phase diagram is
proposed, which unambiguously shows an unprecedented new metallic state existing in theuniversal phase diagram.
[1]. S. Heguri and K. Tanigaki, Dalton Transactions, 47,
2881 (2018).
[2] Q. TN Phan, S. Heguri, H. Tamura, T. Nakano, Y.
Nozue, K. Tanigaki, Phys. Rev. B 93, 075130 (2016).
[3] S. Heguri, N. Kawada, T. Fujisawa, A. Yamaguchi, A.
Sumiyama, K. Tanigaki, M. Kobayashi, Phys. Rev.
Lett. 114, 247201 (2015).
Fig. 1 A new phase diagram of A3C60.

Corresponding Author: K. Tanigaki
Tel: +81-03-217--6166, Fax: +81-03-217-6167,
Web: http://sspns.phys.tohoku.ac.jp/
E-mail: tanigaki@tohoku.ac.jp- 28 -

2-7
Achieving High Efficiency in Solution-Processed Perovskite Solar Cells
using C60/C70 Mixed Fullerenes○Haosheng Lin 1, Il Jeon 1, Shigeo Maruyama 1, Yutaka Matsuo, 1,2
1
2

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Chemistry, The University of Science and Technology of China, Hefei, Anhui,
230026, P. R. China

Fullerenes have attracted considerable
interest as an electron transporting layer inperovskite solar cells. Fullerene-based perovskite
solar cells produce no hysteresis and do not
require high-temperature annealing. However,high power conversion efficiency can only beachieved when the fullerene layer is thermallyevaporated, which is an expensive process. In thiswork, the limitations of a solution-processed
fullerene layer have been identified as highcrystallinity and the presence of remnant
solvents, in contrast to a thermally deposited C60
film, which has low crystallinity and noremaining solvents. As a solution to these problems, a mixed C60 and C70 solution-processed
film, which exhibits low crystallinity, is proposed as an electron transporting layer. The mixedfullerene-based devices produce power conversion efficiencies as high as that of the thermallyevaporated C60-based device (16.7%), owing to improved fill factor and open-circuit voltage.
In addition, by vacuum-drying the mixed fullerene film, the power conversion efficiency of thesolution-processed perovskite solar cells is further improved to 18.0%. This improvement
originates from the enhanced transmittance and charge transport by removing the solvent effect.
This simple and low-cost method can be easily used in any type of solar cells with fullerene as
the electron transporting layer.

Corresponding Author: Y. Matsuo
Tel: + 81-3-5841-0978,
E-mail: matsuo@photon.t.u-tokyo.ac.jp- 29 -

3-1
Progress Review on Single-walled Carbon Nanotube Electrodes in Flexible
Photovoltaics○Il Jeon1, Esko I. Kaupinnen2, Yutaka Matsuo1,3, Shigeo Maruyama1.4
1Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Applied Physics, Aalto University School of Science, Aalto, FI-00076, Finland
3
University of Science and Technology of China, Anhui 230026, China
4
National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan
2

Energy is one of the biggest challenges that our society is facing. Global warming andenergy crisis have prompted the society to look for pollution-free and infinitely renewableenergy sources. Among the different renewable energies available, solar energy is by far themost abundant and clean energy source. It is no surprise that nature has taken advantage ofthis in the form of photosynthesis for the past billions of years. Photovoltaics, more generally
known as solar cells, are semiconducting devices which convert solar energy to electricity,
potentially meeting the demand of the world energy consumption while offsetting the carbon
emissions. Solar cells have received much attention, especially in the last ten years due toemerging concerns about the energy crisis. Among different types of solar cells, thin-film
solar cells are regarded to have the potential to lead the solar cell field with their power
conversion efficiencies and flexible applications. However, they have problems of relying on
inflexible and expensive indium tin oxide (ITO) transparent electrodes and metal electrodes.
Single-walled Carbon nanotubes (SWNTs) have emerged as materials for next-generationelectrodes in thin-film solar cells, offering a possible alternative to the ITO and metalelectrodes. SWNTs have excellent mechanical flexibility and are composed entirely ofnaturally abundant carbon. Therefore, SWNT conductive films in thin-film solar cells havebeen the subject of active research, which continues to this day. With the improvement on theproperties of SWNTs in both synthetic and engineering levels, a remarkable advancement is
expected to be made in the field of flexible thin-film solar cells.
In this presentation, we review the research progress made by our group in this area of
research. We discuss different aspects that are key to successful substitution of theconventional electrodes by the next-generation SWNT electrodes.
Corresponding Author: S. Maruyama
Tel: + 81-3-5841-6421, Fax: + 81-3-5800-6983,
Web: http://www.photon.t.u-tokyo.ac.jp/~maruyama
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 30 -

3-2
Lightweight Copper-matrix/Carbon Nanotube Composites with Electrical
Performances Rivalling Copper
Rajyashree Sundaram1, Guohai Chen1, Takeo Yamada1, Don Futaba1, Kenji Hata1, ○Atsuko
Sekiguchi1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology, Tsukuba 305-8565, Japan

We present lightweight copper-matrix carbon nanotube composites (Cu/CNT) with electricalperformances competitive to Cu as next-generation Cu-substitutes. Our Cu/singlewall(SW)CNT, 2/3rd as light as copper, show room-temperature electrical resistivities (ρ) as low as
3.3 × 10-6 Ohm cm (~ × 2ρCu). The composite electrical resistivities are more stable totemperature than Cu with temperature coefficient of resistivity (TCR) values as low as 4.4 ×
10-4 /K (~10% TCRCu). We note that the Cu/SWCNT electrical performances are markedly
better than that of Cu/MWCNT composites we previously reported [1-3] with ρCu/MWCNT ~10ρCu and TCRCu/MWCNT ~ 50% TCRCu.
We fabricated Cu/SWCNT with these excellent electrical performances in different forms as microscale pillars and macroscopic wires. We believe these composites have the potential tofulfill a growing need for lightweight electrically conducting Cu-substitutes. Our microscale
Cu/CNT pillars could serve as better vertical interconnects than copper in electronic devices,
aiding miniaturization with increased functionality. On the other hand, our macroscopic
composite wires could replace heavy copper electrical wiring in aircrafts and automobiles for
improved fuel efficiencies. The temperature-stable resistivity (low TCR) is particularly sought
after for reliable high-temperature operation e.g., in motor windings.
[1] R. Sundaram et al. Sci. Rep., 7(1), 9267 (2017).
[2] R. Sundaram et al. Mater. Tod., Commun., 13, 119 (2017).
[3] R. Sundaram et al. Jpn. J. Appl. Phys., 57(4), 04FP08 (2018).
Corresponding Author: A. Sekiguchi
Tel: +81-29-861-4551, Fax: +81-29-861-4851
Web: https://www.nanocarbon.jp/about/members/sekiguchi
E-mail: atsuko-sekiguchi@aist.go.jp- 31 -

3-3
Flexible carbon nanotube ultraviolet sensing and memorizing array
Ting-Yu Qu1, Yun Sun1, Hui-Ming Cheng1,2, ○Dong-Ming Sun1,3*1

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academyof Sciences, Shenyang 110016, China
2
Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

Flexible non-volatile light sensing and memorizing functional device is a key component for
future wearable electronics systems, however, such a device has not yet emerged up to datemainly constrained by two challenges in conventional nano-floating gate memory. One is thelacking of direct tunneling for charge trapping, the other is the existing of current leakage undera deformable environment. Here, we report a flexible carbon nanotube (CNT) non-volatilememory and ultraviolet detector using individual aluminum nanoparticles (Al NPs) as the nanofloating gate and ultra-thin oxidized alumina grown on the surface of each individual Al NPs
as the tunneling layer. The fabricated memory exhibits a high on-off current ratio (> 105), along-term extrapolated retention (> 108 s) and a durable flexibility at a 0.4% bending strain. In
addition, a novel sensing and memorizing image system for ultraviolet illumination has beensuccessfully demonstrated, showing a non-volatile photogenerated on-off current ratio up to
102 for an illumination time of 1 s and a sensing signal storage period up to 10 years. Our study
will open up a new opportunity for future scalable manufacturing of flexible visual memories.
Fig. 1 Flexible CNT
ultraviolet
sensingandmemorizing
array. (a) Opticalphotograph of a chip(scale bar, 5 mm). (b)Micrograph of the 32
× 32 arrays (scale bar,
500 μm). (c) Single
pixel (scale bar, 50μm). (d) Schematics.
(e) HRTEM image(scale bar, 10 nm). (f)
HAADF-STEM andelemental mapping(scale bar, 3 nm). ( g)
SEM image of CNT
channel (scale bar,
500
nm).
(h)
Retention and transfer
characteristics.
(i)
Current distributions
after an illumination.
[1] B. Wang et al. Adv. Mater., 1802057 (2018).
[2] Y, Chen et al. Adv. Sci., 1700965 (2018).
[3] T, Qu et al. In submission (2018).
Corresponding Author: D. Sun
E-mail: dmsun@imr.ac.cn- 32 -

3-4
Molecular screening effects on exciton-carrier interactions
in suspended carbon nanotubes
Takushi Uda1,2, Shunsuke Tanaka1,3, ○Yuichiro K. Kato1,3
1

Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama 351-0198, Japan2
Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
3
Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics,
Saitama 351-0198, Japan(a)PL (counts/s)

103
102
101

100
0.8
0.9
1.0
1.1
Emission energy (eV)Energy separation (eV)Photoluminescence spectroscopy measurements are performed on suspended carbon
nanotubes in a field-effect configuration, and the gate voltage dependence ofphotoluminescence spectra are compared for the pristine and the molecularly adsorbed statesof the nanotubes [1]. We quantify the molecular screening effect on the trion binding energies
by determining the energy separation between the bright exciton and the trion emission
energies [2] for the two states (Fig. 1). The voltage dependence shows narrower voltage
regions of constant photoluminescence intensity for the adsorbed states, consistent with areduction in the electronic bandgap due to screening effects. The charge neutrality points arefound to shift after molecular adsorption, which suggests changes in the nanotube chemical
potential or the contact metal work function. The molecular screening effects allow for drastic
spectral modifications, offering a new degree of freedom for nanoscale photonic devices [3,4].
0.20

(b)

0.18
0.16
0.14
0.95 1.00 1.05 1.10
Diameter (nm)Fig.1 (a) PL spectra of a (10,5) tube in the pristine (black curve) and the adsorbed state (gray curve)
taken under Vg = -1.5 V. (b) Diameter dependence of the energy separation between the exciton andthe trion states for the pristine states (black dots) and the adsorbed states (gray triangles).

Work supported in part by JSPS (KAKENHI JP16H05962) and MEXT (Photon Frontier
Network Program, Nanotechnology Platform). T.U. is supported by ALPS and JSPS Research
Fellowship. We thank the Advanced Manufacturing Support Team at RIKEN for technicalassistance.
[1]
[2]
[3]
[4]

T. Uda, S. Tanaka, and Y. K. Kato, arXiv:1806.11239 (2018).
M. Yoshida, A. Popert and Y. K. Kato, Phys. Rev. B. 93, 041402(R) (2016).
T. Uda, A. Ishii and Y. K. Kato, ACS Photonics 5, 559 (2018).
H. Machiya, T. Uda, A. Ishii and Y. K. Kato, Appl. Phys. Lett. 112, 021101 (2018).

Corresponding Author: Yuichiro K. Kato
Tel: +81-48-462-1449
Web: http://katogroup.riken.jp/
E-mail: yuichiro.kato@riken.jp- 33 -

3-5
Terahertz spectroscopy of individual carbon nanotube quantum dots
○Kenji Yoshida,1 Takuma Tsurugaya, 1 Fumiaki Yajima,2 Maki Shimizu,2Yoshikazu Homma,2 and Kazuhiko Hirakawa1,3
Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan1

Department of Physics and Research Institute for Science & Technology, Tokyo University of Science,

2

Tokyo 162-8601, Japan
Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo 153-8505, Japan3

Characteristic energies in carbon nanotubes (CNTs) lie
in the terahertz (THz) frequency range. In addition, when azero-dimensional quantum dot (QD) is formed in a CNT, otherenergy scales such as orbital quantization and vibrational
excitation, also fall into the THz range. Therefore, THz
spectroscopy is an ideal tool for investigating electronic
structures and carrier dynamics of CNTs. However, most of
the works on the THz spectroscopy have so far been performedon CNT films or bundles, which inevitably result in strong
inhomogeneous broadening. Although a few attempts on THz
response of individual CNTs were made in the past [1, 2], theTHz properties of individual CNTs is still unclear.
We have investigated THz response of individual, Fig. 1. A THz spectrum obtained

short metallic CNTs of various lengths by using a transistor from an individual carbon
geometry and achieved THz-spectroscopy of CNTs at the nanotube quantum dot.
individual level. By employing metal source-drain electrodes of a bow-tie antenna shape
separated by a submicron gap, we efficiently focused broadband THz radiation radiation onto
individual CNTs. Transport properties of the fabricated devices indicate that the CNTs act as
QDs. We measured the spectra of THz-induced photocurrent generated in the CNT-QDs andfound that there appears a sharp resonant peak. The photon energy of the peak shows a clear
dependence on the CNT lengths and is in agreement with the bare quantum confined energies
expected from the Fermi velocity in the metallic CNTs and their lengths; manybody
correction in the intersublevel transition energy was not observed. The observed THz
photocurrent peaks were as narrow as 0.3 meV, which is limited by the tunnel escape rates
from the CNT-QDs to the contacting electrodes. The result demonstrated here is the firststep toward THz-spectroscopic studies of other kinds of CNTs such as multi-walled CNTs and
CNT-peapods at the individual level.

[1] Z. Zhong et al., Nat. Nanotech. 3, 201 (2008), [2] J. D. Chudow et al., Nano Lett. 16, 4909 (2016)
Corresponding Author: K. Yoshida, Tel: +81-(0)3-5452-6261, Fax: +81-(0)3-5452-6261
Web: http://thz.iis.u-tokyo.ac.jp/ E-mail: kyoshida@iis.u-tokyo.ac.jp- 34 -

3-6
pH-dependent photoluminescence of monolayer transition-metal
dichalcogenides in an aqueous solution○Wenjin Zhang, Kazunari Matsuda, and Yuhei Miyauchi

Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

Norm. Intensity

Intensity (arb. units)

Monolayer (1L) transition-metal dichalcogenides (TMDCs) MX2, where M and X are atransition metal (typically Mo, W) and a chalcogen (typically S, Se, or Te), respectively, haverecently attracted a great deal of attentions as a new class of two-dimensional (2D) direct gap
semiconductors [1] promising for future electronics and optoelectronics applications. To date,various intriguing optical properties of atomically thin TMDCs in vacuum or ambient air
conditions have been intensively studied using optical spectroscopy techniques [1-3].
However, knowledge on the optical spectra of these materials in aqueous solution withvarious pH values has still been quite limited, although variety of phenomena occurring at theinterfaces of liquid and TMDCs may substantially modify their physical/chemical properties
and affect their usefulness in applications. Thus, it is important to clarify the influence of thesurface electrochemical phenomena in water on their optical properties.
Here we demonstrate a simple procedure for optical spectroscopic studies on mechanicallyexfoliated TMDCs immersed in a liquid, which will provide an excellent platform for
examining impacts of various physical chemistry phenomena at the liquid/TMDC interface on
their physical properties. 1L-TMDCs wereprepared using mechanical exfoliation method,1
and transferred on transparent glass substrates.
The substrate with the transferred 1L-TMDC
was then tightly bonded with a glass tube tocompose a liquid reservoir in which an enoughamount of liquid can be kept over the sample
during the measurements. The optical
0.5
01.6 1.7 1.8 1.9
measurements were performed through the glass
Energy (eV)substrate using oil immersion objective lens andIn water (pH 7)
a home-made confocal optical measurement
In airsystem.
Figure 1 shows PL spectra of 1L-MoS2 in0water and air conditions respectively.
1.6
1.7
1.8
1.9
Considerable modifications in the PL intensity
Photon Energy (eV)and spectral line shape (inset) were observed for
1. PL spectra of 1L-MoS2 in water (solid
the 1L-MoS2 just by immersion in water [4]. Fig.
curve) and air conditions (dashed curve). Inset
Dependence of the PL spectra on pH and the compares the PL spectra normalized by theirmechanism of the spectral modulation will be intensities at the peak maxima.
discussed.
[1] K. F. Mak, et al., Phys. Rev. Lett. 105, 136805 (2010).
[2] K. Matsuda, J. Phys. Soc. Jpn. 84, 121009 (2015).
[3] S. Mouri, Y. Miyauchi, and K. Matsuda, Nano Lett. 3, 5944 (2013).
[4] W. Zhang, K. Matsuda, and Y. Miyauchi, J. Phys. Chem. C 122, 13175 (2018)
Corresponding Author: Y. Miyauchi
Tel/Fax: +81-774-38-3463/+81-774-38-4567
E-mail: miyauchi@iae.kyoto-u.ac.jp- 35 -

3-7
Single-walled carbon nanotubes co-axially wrapped with mono- and fewlayer boron nitride nanotubes and beyond
Rong Xiang1,*, Taiki Inoue1, Yongjia Zheng1, Akihito Kumamoto2, Yuichi Ikuhara2, Ming
Liu1, Yang Qian1, Shohei Chiashi1, Esko I. Kauppinen3, Shigeo Maruyama1,4,*
1Departure of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2

Institute of Engineering Innovation, The University of Tokyo, Tokyo, Japan3

Department of Applied Physics, Aalto University School of Science, 15100, FI-00076 Aalto, Finland

4

Energy Nano Engineering Lab., National Institute of Advanced Industrial Science and Technology (AIST),
Ibaraki 305-8564, Japan

We propose a conceptually new structure, in which mono- or few-layer hexagonal boron
nitride (BN) seamlessly wrap around a single-walled carbon nanotube (SWCNT), and result in
an atomically smooth coaxial tube consisting two different materials, as shown in Fig. 1. The
structure is synthesized by chemical vapor deposition (CVD), and the length of the coaxial
tubes can reach up to micrometers. As the reaction occurs on outer surface of the existing
SWCNTs, we name this process conformal CVD. Various SWCNTs, e.g. vertically aligned
array, horizontally aligned arrays, suspended SWCNTs, random networks and films, areemployed as the starting material, and successful coating are achieved on all of them. TEMEELS clearly demonstrated the BN-SWCNT coaxial structure in individual tube scale, while
Raman, optical absorption, and cathode luminance spectra clearly confirm the existence of thisstructure in large scale. After coating, the SWCNTs can be fully coated and thermal stability
significantly increases.
Our characterizations confirm that the outside BN coating started locally on the wall of a
SWCNT and then merged into a BN nanotube on the curved surface of the SWCNT which
served as a template. The thinnest inner SWCNT that can support the BN layer growth is foundto be 0.6-0.7 nm. The number of walls can be tuned from 1 to few by controlling the CVD
condition. The structure of inside SWCNTs are almost not effected by the conformal CVD, asevidenced by Raman and many other characterizations. The crystallization and cleanness of thestarting SWCNT template are believed to be critical for the successful fabrication of outside
walls. This structure is expected to have a broad interest and impact in many fields, which
include but not limited in investigating the intrinsic optical properties of environment-isolated
SWCNTs, fabricating BN-protected or gated SWCNT devices, and building more sophisticated
1D material systems.

Figure 1 (a) TEM image and (b) atomic models of a SWCNT wrapped with two layers of BNNT; (c) cs-TEM

image of a SWCNT-BN nanotube and its Fast Fourier Transform (FFT) pattern; (d) EELS mapping of a
SWCNT partially wrapped with BN nanotube showing the inner is carbon and outer is BN.

[1] Rong Xiang et al., arXiv:1807.06154
Corresponding Author: xiangrong@photon.t.u-tokyo.ac.jp (RX); maruyama@photon.t.u-tokyo.ac.jp (SM)- 36 -

3-8
Quantum Wells due to Electron-Phonon Interactions in Isotopically
Layered Diamond Superlattices○Yuki Bando1, Masayuki Toyoda1, Takashi Korestune2, Susumu Saito1
1

Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan2
Department of Physics, Tohoku University, Sendai 980-8578, Japan

It has been known that electron-phonon interactions (EPIs) give rise to the band-gap
renormalization in a semiconductor. Since the band-gap renormalization is mostly due to zeropoint motions of phonons even at room temperature, EPIs can make differences in the electronic
structure of isotopically different materials. Actually isotopic diamond superlattice (IDS),
where 12C and 13C diamond layers are periodically stacked as shown in Fig. 1, has been
produced by Watanabe et al. [1] and the confinement of photo-excited carriers in 12C layers has
been demonstrated experimentally. EPIs has been considered to have significant roles in thisphenomenon, while the comprehensive understanding has not been achieved so far. In this work,
we compute EPIs based on Allen-Heine-Cardona theory [2-4] with taking into account offdiagonal terms of self-energy [5] by using Wannier-based tight-binding Hamiltonian. We study
in real 12C/13C IDS and virtual 6C/24C IDS for comparison. From the result of density of states(DOS), we have found that EPIs generate quantum wells (QWs) with a clear band offset aroundthe valence-band top region in 6C/24C IDS for layer thickness of about 100 Å (Fig. 2). We also
have confirmed the similar layer-thickness dependence of the QWs in 12C/13C IDS.

Fig. 1 Schematic figure of IDS.
Fig. 2 Projection of DOS to stacking direction.
[1] H. Watanabe, H. Watanabe, C. E. Nebel, and S. Shikata, Science 324, 1425 (2009)[2] P. B. Allen and V. Heine, J. Phys. C: Solid State Phys. 9, 2305 (1976)[3] P. B. Allen, Phys. Rev. B 17, 3725–3734 (1978)[4] P. B. Allen and M. Cardona, Phys. Rev. B 23, 1495–1505 (1981)[5] M. van Schilfgaarde, T. Kotani, and S. Faleev, Phys. Rev. Lett. 96, 226402 (2006)
Corresponding Author: Y. Bando
Tel: +81-3-5734-2387, Fax: +81-3-5734-2739,
Web: E-mail: y-bando@stat.phys.titech.ac.jp- 37 -

3-9
Superior thermal conductivity enhancement of polymer
composites with bioinspired graphene architecture
Dr. Cheng-Te Lin
Ningbo Institute of Material Technology & Engineering,
Chinese Academy of Sciences, China
Abstract
Based on the fast growth of the device performance, there has been an increasing demand forhandling the issue of thermal management in electronic equipments. Therefore, it is of greatsignificance to improve the thermal conductivity of the polymers, which are commonly usedin electronic components. Due to the high intrinsic thermal conductivity, graphene exhibited
great potential to be incorporated in the polymer matrix for the development of polymer
composites with significant thermal conductivity enhancement. However, the difficulty ofgraphene dispersion and strong interfacial phonon scattering restrict the heat dissipation
performance of graphene/polymer composites. The creation of bioinspired graphenearchitecture with controlled three-dimensional structure in the polymer matrix represents apromising solution for the issue of the difficulty of graphene dispersion, and leads toremarkable improvement of heat transfer capacity of the composites. Our works provide apath to develop a variety of highly thermally conductive polymer composites for use in heatdissipation and other thermal applications.
Biography
Dr. Cheng-Te Lin received his Ph.D. degree in Materials Science and Engineering at National
Tsing Hua University (Taiwan) in 2008. In 2012, he was a postdoc in Prof. Jing Kong's group
at Massachusetts Institute of Technology (MIT, USA), and undertook the investigation ofgraphene aerogel supercapacitors. Subsequently, he took part in the project of highly
thermally-conductive polymer composites with Prof. Gang Chen (MIT, USA). From 2014
June, he is working as a full professor at Ningbo Institute of Material Technology andEngineering. He is the recipient of "1000 Young Talents Plan" from China's government(2015), "Hundred Talents Program" from Chinese Academy of Sciences (2014), and so on. Dr.
Lin has 99 publications in Nature Communications, Advanced Functional Materials,
Chemistry of Materials, Journal of Materials Chemistry A, and Biosensors & Bioelectronics
etc. His research interests focus on the development of graphene-based applications, including
CVD growth technique, functional composites, thermal interface materials, and biosensors.
E-mail: linzhengde@nimte.ac.cn or chengte.lin@gmail.com- 38 -

3-10
Visible-light-induced photodecarbonylation of a-diketone-type large acene
precursors on Au(111) surface○Hironobu Hayashi, Hiroko Yamada
Division of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5, Takayamacho, Ikoma, Nara 630-0192, Japan

Recently, large acenes have gained great attention due to their potentials as functionalorganic semiconductors. The structure-property relationship of large acenes would be a good
information for the effective design for next generation organic semiconducting and spintronics
materials. Specifically, they could be used as model compounds to study chemical and physicalproperties of zig-zag type graphene nanoribbons. However, it is normally difficult to synthesize
large acenes because of the low solubility and stability. On the other hands, we have developed
photochemical precursor method to overcome these problems. Briefly, irradiation of
a-diketone-type precursors at the n-p* absorption leads to the release of two molecules of CO,
and the corresponding acenes can beprepared quantitatively in solutions
or in films.1,2Here, we report the synthesis of
a-diketone-type heptacene andnonacene precursors. In addition, we
also demonstrate the on-surface
formation of heptacene and nonacene
via
visible-light-induced
photodecarbonylation on Au(111)under ultrahigh vacuum conditions.
Scanning tunneling microscopy(STM) and non-contact atomic force
microscopy (nc-AFM) were used toinvestigate their chemical structures(Fig. 1). Furthermore, scanningtunneling
spectroscopy(STS) Figure 1. On-surface formation of heptacene and nonacene on
measurements experimentally reveal Au(111) under ultrahigh vacuum conditions. Acknowledgement:
HOMO-LUMO gaps of these large Dr. Urgel, J. I. and Prof. Fasel, R.@Empa.
acenes.3[1] H. Yamada, Y, Yamashita, M. Kikuchi, H. Watanabe, T. Okujima, H. Uno, T. Ogawa, K. Ohara, N. Ono,
Chem.–Eur. J, 11, 6212 (2005).
[2] J. I. Urgel, H. Hayashi, M. D. Giovannantonio, C. A. Pignedoli, S. Mishra, O. Deniz, M. Yamashita, T. Dienel,
P. Ruffieux, H. Yamada, F. Roman, J. Am. Chem. Soc., 139, 11658 (2017).
[3] The manuscript is under revision.
Corresponding Author: H. Hayashi
Tel: +81-743-72-6136, Fax: +81-743-72-6042,
Web: http://mswebs.naist.jp/LABs/env_photo_greenmat/
E-mail: hhayashi@ms.naist.jp- 39 -

ポスター発表
Poster Preview

1P – 1 ～ 1P – 36
2P – 1 ～ 2P – 36
3P – 1 ～ 3P – 36

1P-1
Electronic and vibrational properties of boron-doped armchairgraphene nanoribbons○ M. S. Islam, Nguyen T. Hung, Ahmad R. T. Nugraha, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Graphene nanoribbons (GNRs), quasi-one-dimensional materials, are two-dimensional
stripes of graphene having potential applications in future nanoelectronic andoptoelectronic devices [1]. The energy bandgaps of armchair graphene nanoribbons(AGNRs) are inversely proportional to their ribbon widths [2]. For 7-AGNR, theexperimentally observed energy bandgap is 2.3 eV [3]. Recently, A. Grüneis et al.,experimentally measured the Raman spectra for both undoped and boron doped 7-AGNR[4]. They found some new peaks in the Raman spectra in the boron doped case that areabsent in undoped case. However, the origin of these peaks are not clear. We expect thatthe electronic band structures of AGNRs not only depend on ribbons width but also
depend on doping and position of doping atom. In this study, we investigate how theenergy bandgaps of the boron doped AGNRs are affected by the ribbons width, numberof dopants and dopants position. We also explore to understand which atoms are
responsible for the new Raman peaks.
In order to reproduce theexperimental
results,
wetheoretically calculate the band
structures and nonresonanceRaman intensities at Γ point, forboth undoped and boron-doped
case by using density functional
theory (DFT). We find that theboron atoms along the backboneof an AGNR have clear effect on
the energy bandgap of the ribbon.

Fig. 1: (a) 7-AGNR, (b) Boron doped 7-AGNR[1] A. Kimouche et al., Nat. Commun. 6, 10177 (2015)[2] Y. W. Son et al., Phys Rev. Lett. 97, 216803 (2006)[3] P. Ruffieux et al., ACS Nano. 6 (8), 6930–6935 (2012)[4] A. Grüneis et al., unpublished
Corresponding Author: Md Shafiqul Islam
E-mail: islam@flex.phys.tohoku.ac.jp- 41 -

1P-2
High yield fabrication of quantum device made of graphene nanoribbon
1○Wakana Okita1, Hiroo Suzuki1, Toshiro Kaneko1, Toshiaki Kato1,2
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Graphene is one of the topical nanomaterials attracting attentions as next generationelectronic materials due to its superior electrical conductivity, mechanically flexible structureand high optical transparency. While graphene has 2-dimensional sheet structure and shows
metallic like behaviour, it has been discovered that graphene nanoribbon (GNR) has finite
bandgap, which can be obtained by making graphene into 1-dimensional structure. This
discovery made GNR conspicuous material mainly in semiconductor device field around theworld.
One of our significant achievement so far is that we succeeded in integrated synthesis ofsuspended GNR for the first time [1-3] by unique plasma CVD process [4] combining with acreative idea, using nanobar structure as a catalyst. Heading towards implementation ofpractical application of suspended GNR grown by our method, it is essential to comprehend its
detailed electrical property. For this purpose, we prepare a narrow (~20 nm) GNR (Fig.1 (a))
and carried out transport measurement at low temperature (~15 K). As a result, almost perfectly
periodic Coulomb diamonds property was observed, which can be caused by quantum
confinement effect (Fig.1 (b)). However, in previous research the probability that Coulomb
diamonds can be observed was exceptionally low, which makes it difficult to realize integrated
quantum devices with GNRs. Therefore, it is very valuable subject to tackle how to improvefabrication yield for quantum device made of suspended GNR grown by plasma CVD.
In this research, it is aimed to increase fabrication yield for quantum device by optimizationof plasma CVD process and original nanobar
structures. Consequently, fabrication yield forquantum device turned out to be increased by using
short nanobar. Furthermore, it has been revealed that
decreasing carbon supply amount while plasma
CVD can also contribute to improving fabrication
yield of GNR quantum devices. Decrease of carbon
supply amount may provide thinner layer GNR andhigher tunnel barrier, which is enough to induce
Fig. 1: (a) Typical scanning electron
quantum confinement effect. This research
microscope image of GNR after CVD.
possesses very useful results to realize future (b) Typical Coulomb diamonds features
integrated-quantum devices with GNRs.
of GNR device.
[1] T. Kato and R. Hatakeyama: Nature Nanotechnology 7(2012) 651.
[2] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa and T. Kato: Nature Communications 7 (2016) 11797.
[3] H. Suzuki, N. Ogura, T. Kaneko, and T. Kato: Scientific Reports (2018) in press.
[4] T. Kato and R. Hatakeyama: ACS Nano 6 (2012) 8508.
Corresponding Author: W. Okita
Tel:+81-22-795-7046,
E-mail:wakana.okita.r5@dc.tohoku.ac.jp- 42 -

1P-3
Epitaxial growth of large monolayer h-BN
and its application to gas barrier layer○Alexandre Budiman Taslim1, Hideaki Nakajima2, Yung-Chang Lin3, Yuki Uchida1,
Kenji Kawahara4, Takahiro Morimoto2, Toshiya Okazaki2, Kazu Suenaga3, Hiroki Hibino5,
Hiroki Ago1,4
1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580
2 CNT Application Research Center, AIST, Tsukuba 305-8565
3 Nanomaterials Institute, AIST, Tsukuba 305-8565

5

4 Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580

School of Science and Technology, Kwansei Gakuin University, Hyogo 669-1337

A structural analog of graphene, hexagonal boron nitride (h–BN) has been reported to be
an ideal substrate for graphene and related 2D materials due to its flat surface without
dangling bond [1]. Furthermore, h–BN is promising for gas barrier application, because h-BN
is more chemically and thermally stable than graphene and its insulating property prevents
galvanic corrosion that occurs in graphene coating [2]. Chemical vapor deposition (CVD) has
been commonly used to grow h-BN on various metal catalysts, such as Cu, Cu-Ni alloy, andFe [3-5]. However, due to relatively small size and random orientation of h–BN grains, highdensity of grain boundaries was formed, which will deteriorate the barrier property of h–BN[2]. Thus, the growth of large area h–BN grain, with good crystallinity and alignment isnecessary in order to improve the barrier property. Here, we present epitaxial growth ofmonolayer h-BN on a Ni(111) thin film and its application as a gas barrier layer.
The growth of h–BN was performed by flowing borazine (HBNH)3 precursor on Ni(111)thin film deposited on c-plane sapphire. By optimizing the growth conditions, we haveobtained large h-BN grains as large as 0.5 mm (Figure 1). This grain size is among the largest
size reported so far [4,5]. Additionally, as we can see from Figure 1 inset, low-energy electron
diffraction (LEED) confirmed the epitaxial
nature of the h–BN on Ni(111). Thus, a low
defect density can be expected due to possible
stitching between merged grains. We haveinvestigated the gas barrier property of ourh-BN grains. The metallic Ni was wellpreserved even after heating in air at 500 ºC
for 15 min (see Figure 1), demonstrating thehigh stability of the h-BN. The boundary
between merged grains was not damaged bythis high temperature process. As graphene
starts to be oxidized at 250 °C in air [2,6], Fig. 1 Optical image of Ni surface after oxidation at
500 °C for 15 min. Inset shows the LEED patterns
h-BN is more promising for gas barrier of h–BN (circles) and Ni (arrows) before oxidation.
application.
[1] C. R. Dean et al., Nat. Nanotechnol. 5, 722 (2010)[4] G. Lu et al., Nat. Commun. 6, 6160 (2015)[2] L.H. Li & Y. Chen, Adv. Funct. Mater. 26, 2594 (2016) [5] S. Caneva et al., Nano Lett. 15, 1867 (2015)[3] K. K. Kim et al., Nano Lett. 12, 161 (2012)[6] D. Ding et al., J. Phys. Chem. C 122, 902 (2018)
Corresponding Author: H. Ago Tel: +81-92-583-8815, E-mail: h-ago@gic.kyushu-u.ac.jp- 43 -

1P-4
Reduction of the temperature dependence of the resonance frequency shift
in nano-electro-mechanical resonator with a van der Waals heterojunction○Taichi Inoue, Yuta Mochizuki, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japanf0 (MHz)f0 (MHz)

Nano-electro-mechanical resonators are expected forhighly sensitive force sensor or oscillator owing to theirhigh frequency and controllability [1]. However, thereduction of the heat-induced frequency shift is one of
the challenges for practical applications. Here, we
reduce the heat-induced frequency shift in mechanicalresonator (MR) by MoS2/graphene van der Waals
heterojunction, which have the different signs ofFig. 1 Measurement setup.
thermal expansion coefficients (TECs) [2].
We measured the resonance frequency of graphene (a) 16
Grapheneand stacked MoS2/graphene MRs under the vacuum of
15~ 10-3 Pa (Fig. 1). The suspended area of the MR is
14
T (K)
treated as a field effect transistor channel. The vibrationRT
13+2
was driven by applying alternative current source drain+4
12
voltage Vds. The resonance was detected by amplitude+6+8
11
modulation (AM) down mixing. Also, the resonance+10
10
frequency can be tuned upward by increasing gate
2
3
4
5
6
Vgs (V)
voltage Vgs, which increases electrostatic force between(b) 10.5
MR and the substrate.
MoS2 / Graphene
Fig. 2 shows Vgs and temperature change T
10.0
dependence of resonance frequency f0 for (a) graphene
9.5
T (K)and (b) MoS2/graphene MRs. In graphene MR, the shift
RT
B
9.0
+2
C
is modulated from positive to negative as increasing Vgs.
+4
D
8.5
This result originates from strain by Vgs [3]. The TEC
+6
E
8.0
+8
F
of graphene MR was estimated to -1.6×10-6 K-1 by the
+10
G
7.5 2
vibration model, which is close to previous research
3456Vgs (V)(-7.0×10-6 K-1 [3]). In MoS2/graphene MR, however,the shift was suppressed for all Vgs. This is due to the Fig. 2 The Vgs and T dependence of f0
stack of the positive and negative TECs of MoS2 and for (a) graphene and (b) MoS2/grapheneMRs.
graphene, which makes the apparent TEC of
MoS2/graphene app close to 0 as follows.
𝐸𝐸𝑔𝑔𝑔𝑔𝑔𝑔 𝛼𝛼𝑔𝑔𝑔𝑔𝑔𝑔 𝑛𝑛𝑔𝑔𝑔𝑔𝑔𝑔 + 𝐸𝐸𝑀𝑀𝑀𝑀𝑆𝑆2 𝛼𝛼𝑀𝑀𝑀𝑀𝑆𝑆2 𝑛𝑛𝑀𝑀𝑀𝑀𝑆𝑆2 𝐸𝐸: 𝑌𝑌𝑌𝑌𝑌𝑌𝑌𝑌𝑔𝑔′𝑠𝑠 𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚
𝛼𝛼𝑎𝑎𝑎𝑎𝑎𝑎 =𝛼𝛼: 𝑇𝑇𝑇𝑇𝑇𝑇()
𝐸𝐸𝑔𝑔𝑔𝑔𝑔𝑔 𝑛𝑛𝑔𝑔𝑔𝑔𝑔𝑔 + 𝐸𝐸𝑀𝑀𝑀𝑀𝑆𝑆2 𝑛𝑛𝑀𝑀𝑀𝑀𝑆𝑆2
𝑛𝑛: 𝑁𝑁𝑁𝑁𝑁𝑁𝑁𝑁𝑁𝑁𝑁𝑁 𝑜𝑜𝑜𝑜 𝑙𝑙𝑙𝑙𝑙𝑙𝑙𝑙𝑙𝑙𝑙𝑙
By analyzing the vibration model, the whole TEC of the MoS2/graphene MR was calculated
as -5.9×10-7 K-1, which was 1/3 smaller than that of the graphene MR.
㻌

Acknowledgements: This work was partially supported by KAKENHI Grant Number JP15H05869, J16H00920,
16K14259, 16H06504, and 17H01040.
Reference: [1] T. inoue et al. ACS Omega 2, 5792 (2017) [2] T. Inoue et al., arXiv, 1805.03835 (2018) [3] V.
Singh et al., Nanotechnology 21, 209801 (2010)
Corresponding Author: T. Inoue, Tel: +81-72-254- 9261, E-mail: t_inoue-4@pe.osakafu-u.ac.jp- 44 -

1P-5
Development of fabrication method for high quality hBN-encapsulated
TMD device○Takato Hotta 1, Keiji Ueno 2, Kenji Watanabe 3, Takashi Taniguchi 3,
Hisanori Shinohara 1, Ryo Kitaura 1
1

Department of Chemistry, & Institute for Advanced Research, Nagoya University, Nagoya
464-8602, Japan2
Department of Chemistry, Saitama University, Saitama 338-8570, Japan
3
National Institute of Materials Science, Tsukuba 305-0044, Japan

Transition metal dichalcogenides (TMDs) and its
heterostructures provide fascinating opportunities for
exploration of physics and chemistry in the realm of
two-dimensional systems. Recent works on TMDs haveclearly demonstrated that hBN-encapsulated structures
are essential to address intrinsic properties of TMDs
and TMD-based heterostructures. Now, the bottleneckin the fundamental research of TMDs is the fabricationof high-quality hBN-encapsulated devices. During thedevice fabrication process, impurities are easily
encapsulated between hBN and TMDs, which leads todegradation of the quality of the devices. For further
exploration of fundamental properties of TMD and
TMD-based heterostructures, development in afabrication method of high-quality devices is
indispensable. In this work, we have focused on
development of high-quality hBN-encapsulated devices
based on the nano-squeeze method [1].
Figure 1 shows hBN-encapsulated MoSe2/WSe2(hBN/MoSe2/WSe2/Graphene/hBN). We have applied
picking-up-based dry transfer method for the
fabrication of the heterostructure. During the
fabrication process, bubble formation has occurred asshown in Figure 1a. We have removed the bubbles by
the nano squeeze method, where bubbles are removed
through sweeping the surface of the sample with an
AFM tip. As shown in the figure, after sweeping thesurface, most of bubbles are removed, and height
between MoSe2 and WSe2 significantly decreased from
2.0 to 1.1 nm. In the presentation, optical and electronic
properties of fabricated devices will be discussed indetail.

Fig. 1 An optical microscope image of thefabricated MoSe2/WSe2 heterostructurewith graphene electrode. Top is the image
before sweeping and bottom is the image
after sweeping and annealing.

[1] M. R. Rosenberger, et. al., ACS Appl. Mater. Interfaces 10, 10379-10387 (2018).
Corresponding Author: H. Shinohara and R. Kitaura
Tel: +81-52-789-3660, Fax: +81-52-747-6442,
E-mail: noris@nagoya-u.jp and r.kitaura@nagoya-u.jp- 45 -

1P-6
Synthesis of small-diameter, high-crystallinity single-wall carbon nanotubes(SWCNTs) using Ni-Al-O nanopowder○Bozhi Chen1, Toshihiro Sato1, Hisashi Sugime2, Eleni Temeche3, Richard M. Laine3, Suguru
Noda1, 4
1

Department of Applied Chemistry, School of Advanced Science and Engineering, Waseda University,
3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
2
Waseda Institute for Advanced Study, Waseda University, 1-6-1 Nishi Waseda, Shinjuku-ku, Tokyo
169-8050, Japan3
Department of Materials Science and Engineering and the Macromolecular Science and Engineering
Center, University of Michigan
4
Waseda Research Institute for Science and Engineering, Waseda University, Tokyo 169-8555, Japan.

Single-wall carbon nanotubes (SWCNTs) with small diameter and high crystallinity areimportant in various applications such as transparent conductive films and thin film transistors.
Preparation of small diameter catalyst particles is crucial, so we focused on [NiO]0.5[Al2O3]0.5
spinel nanopowder which is synthesized by liquid-feed flame spray pyrolysis (LF-FSP) [1].
Ni nanoparticles (NPs) can be formed on the surface of the spinel by annealing at hightemperature under reductive atmosphere, and the diameter of Ni NPs is controllable with theannealing condition. In addition, large specific surface area of the spinel nanopowder isadvantageous for future mass production of SWCNTs.
The nanopowder was sonicated and dispersed in C2H5OH, drop-casted on SiO2/Si
substrates, and then dried at ambient condition. The substrates were loaded into a hot-wallchemical vapor deposition (CVD) apparatus, and the temperature was ramped up under Ar
flow (100–900 sccm) at ambient pressure. After reaching the reaction temperature, CH4 wasadded as both reductant and carbon source to grow CNTs. Unlike common CVD processes
where the reduction of the catalyst is carried out under H2 atmosphere, in this study, thecatalyst was reduced with CH4 which enabled the formation of small catalyst NPs followed by
immediate SWCNT growth. The growth time was fixed to 10 min, and the concentration of
CH4 was changed from 10–90 vol% with the total flow rate of 1000 sccm. After the growth,
CH4 was stopped and the samples were cooled down under Ar flow. The as-grown samples
were analyzed by SEM, Raman (excitation wavelength: 488 nm), and TEM. The SWCNTs
with small diameter (1–2 nm) and high crystallinity (IG/ID > 20 in Raman spectrum) wereobtained (Fig. 1). The IG/ID ratio is comparable to the high quality SWCNTs grown fromC2H5OH [2,3].
(a)

(b)

Corresponding Author: S. Noda
Tel: 03-5286-2769
E-mail: noda@waseda.jp

100 nmIntensity (arb. unit)

488 nm[1] R. M. Laine, et al, Nature Materials 5,710 (2006).
[2] S. Maruyama, et al., Chem. Phys. Lett.
360, 229 (2002).
[3] Y. Murakami, et al., Jpn. J. Appl. Phys 43,
1221 (2004).

100 200 300

1200 1400 1600
-1

Raman shift (cm )Fig 1. (a) SEM image and (b) Raman spectrum of
SWCNTs grown from CH4 using [NiO]0.5[Al2O3]0.5
nanopowder at 850 °C for 10 min.

- 46 -

1P-7
Carrier density control of SWCNTs for electric power generation○Guowei Wang, Takeshi Tanaka, Atsushi Hirano, and Hiromichi Kataura
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Ibaraki 305-8565, Japan

By moving electrolyte droplet on an ultra-thin conductive film, an electric power can begenerated, which is useful for IoT sensing devices. Now we are preparing semiconducting
single-wall carbon nanotube (SWCNT) thin films for this purpose. To achieve high efficiency,
we need to control the carrier density of the SWCNT film precisely. For the electronic device
applications, external chemical doping has been widely used to control the SWCNT carrier
density. To ensure high stability of chemical doping in the environment, however, we need toencapsulate dopant molecules inside the SWCNTs for this purpose [1].
In this study, N,N’-bis(3-pentyl)perylene-3,4,9,10-bis(dicarboximide) (PBI) and2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]squaraine (DPSQ) were selected as nand p-type dopant molecules, respectively. Before doping, endcaps of SWCNTs (EC1.5,
Meijo Nano Carbon, unsorted) were removed by heating in air. Subsequently, the SWCNTs
were refluxed in 1,4-dioxane for 4 h with dopant molecules pre-dissolved therein. After the
reflux process, the SWCNTs were washed for many times to remove excess dopant molecules
outside the SWCNTs. The PBI and DPSQ molecules encapsulated in SWCNTs werecharacterized by optical absorption spectra (Fig. 1). The absorption peaks of PBI and DPSQ
after reflux process show clear red-shifts that suggest the successful encapsulation. We willcontrol the amount of dopant molecules, namely the number of carriers, as the next step.
This work was supported by JST CREST Grant Number JPMJCR16Q2, Japan.

Fig. 1. Optical absorption spectra of (A) empty SWCNTs, PBI@SWCNTs, and PBI dissolved in
1,4-dioxane, (B) empty SWCNTs, DPSQ@SWCNTs, and DPSQ in 1,4-dioxane.
[1] T. Takenobu et al. Nat. Mater. 2, 683 (2003).
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-29-861-2786,
E-mail: h-kataura@aist.go.jp- 47 -

1P-8
Triboelectric generator with carbon nanotube thin film
for wearable electronics○Masahiro Matsunaga1, Jun Hirotani2, Shigeru Kishimoto2, Yutaka Ohno2,3
Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603,
Japan
1

With rapid growth of the field of the internet of things, energy harvesting devices have been
attracting attention for an alternative way of battery to drive electronics. Recently, triboelectric
generator (TEG), which is a kind of mechanical energy harvesters, is attracting interests forhighly-efficient energy harvester [1]. The working mechanism of the TEG is a combination ofcontact electrification and electrostatic induction. The TEG has a potential for wearable
electronics using stretchable materials such as carbon nanotube (CNT) thin film [2]. In thisstudy, we fabricated transparent and stretchable TEG toward wearable energy harvester, usinga CNT thin film as an electrode.
The TEG was composed of a carbon nanotube thin film covered with polydimethylsiloxane(PDMS) as shown in Fig. 1. After spin-coating PDMS onto a plastic substrate, a CNT film wasformed on the PDMS surface by the transfer process based on the floating catalyst chemical
vapor deposition or by the spray coating of CNT ink. After connecting Cu wire with silver paste,
the top PDMS was spin-coated to cover the CNT thin film. We then applied CF4 plasma to
modify the PDMS surface to be fluorinated surface for an enhancement of the output power.
Figure 2 shows a photograph of the fabricated TEG, which is transparent and stretchable.
We applied mechanical contacts by hand tapping with nitrile glove, and measured voltage
through the load resistance. The instantaneous peak power reached over 8 W/m2 at the load
resistance of 30 MΩ. The power was sufficient to drive 100 blue LEDs connected in series. We
also demonstrated energy harvesting from human motions such as elbow’s motion and handclaps.
Acknowledgment: This work was supported by JST/CREST (JPMJCR16Q2).
[1] Z. L. Wang, Mater. Today 20, 74 (2017).
[2] N. Fukaya et al., ACS Nano 8, 3285 (2014).

Fig. 1. Schematic of triboelectric
generator and measurement setup.

Fig. 2. Photograph of fabricatedtriboelectric generator.

Corresponding Author: Y. Ohno
Tel & Fax: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 48 -

1P-9
Photoluminescence properties ofmeta-linked bis-aryl-modified single-walled carbon nanotubes○Boda Yu1, Tomohiro Shiraki1,2, Tsuyohiko Fujigaya1,2,3,4
Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3 JST-PRESTO, Saitama, 332-0012, Japan
4 Center for Molecular Systems (CMS), Kyushu University, Fukuoka 819-0395, Japan1

Semiconducting single-walled carbon nanotubes (SWNTs) show near infrared (NIR)
photoluminescence (PL) from E11 transition, which is applicable to bio imaging andtelecommunication devices. The PL properties such as wavelengths are usually determined bychiral indices of SWNTs. Recently, however, local chemical functionalization of SWNTs has
been reported to produce new PL, E11*, that has red-shifted and higher quantum yields
compared to the original E11 PL [1]. Regarding the locally functionalized SWNTs (lf-SWNTs),
we reported a newly designed bis-aryldiazonium salt that induced largely red-shifted PL of
E112* transition compared to E11* PL of lf-SWNTs through the chemical modification [2].
Therein, theoretical calculations indicated that the band gaps of the E112* PL were influenced
by the positional difference of the secondary aryl binding. Recently, Doorn et al. reported thathydrogen attachment, which occurs after a reaction of SWNTs with a mono-aryl diazonium salt,
induced remarkable spectral shifts of E11* [3]. Here, we newly design methylene-linked bisaryldiazonium salts bridged at the meta positions of the aryl groups for further modulation of
the E112* PL.
The meta-linked bis-aryldiazonium salts having different methylene chain lengths weresynthesized (mCn-Dz; n is the number of methylene units) and reacted with solubilized SWNTs
in a micellar D2O solution (mCn-lf-SWNTs). By UV/vis/NIR absorption spectroscopy, a slightdecrease of absorbance was observed after the chemical reaction for mC3-lf-SWNTs, indicating
local chemical functionalization of the tubes. In contrast, the PL spectrum of mC3-lf-SWNTs
showed a remarkable change compared to that of the pristine SWNTs; that is, a new PL peak
appeared at 1260 nm. Interestingly, mC5-lf-SWNTs showed PL at 1246 nm. It is consideredthat the observed dependence of the resulting E112* PL wavelength on the methylene chain
lengths of bis-aryldiazonium compounds can be varied between para and meta linkage systems,
indicating creation of positional differences in the two point attachment structures based on themolecular designs of modifiers. Other structural factors will be discussed at the symposium.
[1] Y. Piao, B. Meany, L. R. Powell, N. Valley, H. Kwon, G. C. Schatz, Y. Wang, Nat. Chem, 5, 840 (2013).
[2] T. Shiraki, T. Shiraishi, G. Juhász, N. Nakashima, Sci. Rep, 6, 28393 (2016).
[3] S. K. Doorn et al. ACS. Nano, 11, 10785 (2017).
Corresponding Author: T. Fujigaya
Tel: +81-092-802-2840, Fax: +81-092-802-2840,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 49 -

1P-10
Photoluminescence energy shift of locally functionalized single-walledcarbon nanotubes by effects of solvent molecules○Yoshiaki Niidome1, Tomohiro Shiraki1,2, Tsuyohiko Fujigaya1,2,3,4
1 Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

3 JST-PRESTO, Honcho, Kawaguchi, Saitama 332-0012, Japan
4 CMS, Kyushu University, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) show photoluminescence (PL) due to uniqueelectronic structures based on the one dimensional nanoarchitechtures. The PL properties are
known to be sensitively changed by microenvironmental effects of surrounding surfactants andsolvent molecules [1]. As a new characteristic, recently, local chemical functionalization of
SWNTs is reported [2][3]. Namely, the locally functionalized SWNTs (lf-SWNTs) emit new PL(E11*) that has lower band-gap energy over 100 meV and higher quantum yields compared tothose of original PL (E11) of the pristine SWNTs.
In this study, we examine microenvironment effects on the PL properties of lf-SWNTs toinvestigate the effect for exciton at locally functionalized site and at the pristine sites. We
synthesized nitroaryl lf-SWNTs (lf-SWNTs-NO2) that
E11*
were solubilized in D2O by using a surfactant, to whicho-dichlorobenzene (oDCB) was mixed. Finally, theresultant aqueous layer was collected for optical
E11
measurements.
Fig. 1 shows PL spectra of lf-SWNTs-NO2 before andafter mixing of oDCB. Interestingly, the E11* PLshowed larger energy shifts than that of the E11 PL. The
result indicates that interactions of oDCB with thenanotubes would be different between the local
functionalized sites and the pristine sites. Similarenergy shift were observed when other solvents were Fig. 1 PL spectra of lf-SWNT-NO2
mixed. Detail results and mechanisms of the systems before (solid line) and after (dashedlines) mixing oDCB.
will be presented at the poster.
[1] Y. Miyauchi. J. Mater. Chem. C, 1, 6499 (2013)[2] Y. Wang et al. Nat. Chem. 5, 840 (2013)[3] T. Shiraki et al. Nanoscale. 9, 16900 (2017)
Corresponding Author: T. Fujigaya
Tel/Fax: +81-92-802-2842,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 50 -

1P-11
Spontaneous Assembly of Chevrel-Phase Mo6Te6 Nanowires Inside Carbon
Nanotubes○Masataka Nagata1, Yusuke Nakanishi,1, 2 Shivani Shukla,3 Zheng Liu,4, 5 Yung-Chang Lin,5Kazu Suenaga,5 and Hisanori Shinohara1, 2
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Institute for Advanced Research, Nagoya University, Nagoya 464-8602, Japan.
3
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, USA.
4
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan.
5
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
12Transition-metal chalcogenides (TMCs) are low-dimensional materials that demonstratemorphology-dependent properties and functions, and hence are regarded as one of the mostpromising candidates for ‘post-nanocarbon’ materials. In contrast to 0D and 2D TMCs, muchless is known about 1D TMCs due to ineffective techniques for the precise control over the
nano-structures. Chevrel-phase nanowires are well-defined 1D Mo6X6 compounds (X=chalcogen), which allow for future innovations such as electron channels and building blocks
for integrated nano-electronics. Although the nanowires has previously been fabricated by
employing top-down methods [1] and chemical reactions [2], length limitations (<0.1 µm) andbundled structures pose barriers for further exploring their properties and application.
In this work, we report a method for the bulk
production of long, single Mo 6Te6 nanowires byusing the CNT-templated reaction that we havedeveloped over the last decade [3]. The structure of
Mo6Te6 nanowires was determined by transmission
electron microscopy (Fig. 1). Our CNT-templated
reaction enables their bottom-up growth, allowing
for bulk production of long (>1 µm) Chevrel-phasenanowires isolated by CNTs and possessing ideal
diameters. Current Raman and X-ray photoelectron
spectroscopic analyses reveal the growthmechanism and novel properties of these 1D
nanowires. Our results should open a new route forthe bulk production of exceptionally long andisolated 1D TMCs, leading to investigation of their Fig.1 (a) Atomic structural model and (b) aelectronic and optical properties as well as scanning transmission electron micrograph of asingle Mo6Te6 nanowire.
application.
[1] J. Lin et al., Nat. Nanotech., 9, 436, (2014).
[2] J. Kibsgaard et al., Nano Lett., 8, 11, 3928 (2008).
[3] H. Shinohara, Jpn. J. Appl. Phys., 57, 020101 (2018).
Corresponding Author: Y. Nakanishi and H. Shinohara
Tel: +81-52-789-3660
Web: http://nano.chem.nagoya-u.ac.jp/japanese/
E-mail:nakanishi.yusuke@g.mbox.nagoya-u.ac.jp; noris@nagoya-u.jp- 51 -

1P-12
Basic Physico-Chemical Properties of C2V-Symmetrical Octasubstituted
Fullerene Derivatives○Yue Ma1, Hiroshi Ueno2, Hiroshi Okada3, Koya Uchiyama4, Hiroshi Moriyama4, Yutaka
Matsuo1,2,3
1

Hefei National Laboratory for Physical Sciences at Microscale, University of Science andTechnology of China, 96 Jin-zhai Road, Hefei, Anhui 230026, China
2
School of Chemistry, Northeast Normal University, Changchun, Jilin 130024, China
3
Department of Mechanical Engineering, School of Engineering, The University of Tokyo,
Bunkyo-ku, Tokyo 113-8565, Japan
4
School of Chemistry, Graduate School of Science, Toho University, Miyama, Funabashi,
Chiba 274-8510, Japan

Intensive research has been applied on chemical functionalization of fullerenes over the past
decades, aiming at utilizing their broad availabilities in various research fields. Compared with
the numerous kind of mono-functionalized fullerenes that have been deeply taken into
investigation, however, only a few rational approaches towards fullerene multiadducts arereported due to the difficulty of regioselective synthesis, efficiently isolation, and unambiguous
characterization. Although we reported the new synthetic approach towards novel C2Vsymmetrycal octa–substituted fullerenes recently[1], systematic evaluation of their basic
properties is still insufficient yet.
In this work, the aggregation behaviour as well as electrochemical properties has beensystematically studied for this series of octa–substituted fullerene derivatives (Figure 1a). Thesesamples could exist as monomer in both nonpolar toluene and middle polar dichloromethane(Figure 1b) while high polar DMF rendered the molecule forming 100 nm aggregates. Cyclic
voltammetry measurements reveals not only their stable redox properties but also indicatedtheir LUMO levels can be widely and precisely tunable. The details will be shown on the poster.

Figure 1. (a) Structure of C2V-symmetrycal octasubstituted fullerenes. (b) Particle size
distribution of C60(OCH(CH3)2)8 in dichloromethane.
[1] H.Ueno et al., J. Org. Chem., in revision.
Corresponding Author: Y. Matsuo
Tel: +81-3-5841-0978, E-mail: matsuo@photon.t.u-tokyo.ac.jp- 52 -

1P-13
Evaluation of thermal conductance of single-wall carbon nanotube
thin film by time domain thermo-reflectance method○Hiroyuki Matsuo 1, Yohei Yomogida 1, Takashi Yagi2, Kazuhiro Yanagi 1
1

2

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Department of Physics, National Institute of Advanced Industrial Science and Technology, Tsukuba,
Ibaraki,305-8563, Japan

In recent years, organic conductive polymers and carbon nanotubes have attracted a lot ofinterest as thermoelectric materials. For this purpose, it is important to evaluate their thermal
conductance in their thin film form. There are various approaches to evaluate the thermal
conductance of thin films, such as steady heat conduction analysis, 3ω method, laser flash
method, periodic heating method, and so on. In this study, we investigated thermal conductanceof single-wall carbon nanotube (SWCNT) thin films by Time-Domain Thermoreflectancemethod (TDTR), which can evaluate thermal conductance in the direction perpendicular to thesurface, [1] because this method is expected to be
applicable for FET device structures.
SWCNT films (MEIJO nano carbon ARCSO,
Unpurified: metal / semiconductor mixed sample)
were formed on the surface of an aluminum thin film
(thickness 33nm). The thickness of SWCNT thin film
was adjusted to be about 200nm. TDTR measurements
were performed by irradiating pump light (1550nm,
pulse width 0.5ps) and probe light (775nm, pulse width
0.5ps) from the Al side. The modulation on pump lightat a cycle of 200kHz was applied, and then the phasechange of reflectivity of the Al film was evaluated by Figure1：Phase change of reflectivity of
the lock-in amplifier. As shown in Fig. 1, there are
significant difference in phase change between Al Al with SWCNTs and Al without
without SWCNTs and Al with SWCNTs. As shown in SWCNTs.
Fig. 2, we were able to reproduce the phase change by
analyzing the two-layer model; "SWCNT layer / Allayer / glass substrate" with the SWCNT layer set at 200
nm. Based on the analysis results, a thermal conductivityof the thin film was evaluated to be 0.08W m-1 K-1. In
contrast, according to the results obtained by periodic

heating method, the thermal conductance was evaluatedto be 13.5W m-1 K-1, which is lateral thermal
conductivity in the thin films. This means that thethermal conductivities of the perpendicular and lateral
directions in the films are different, reflecting theanisotropy of thermal conductivity of SWCNTs in thethin films.
[1]. Kajita et al., Jpn. J. Appl. Phys. 55, 056203 (2016)
Corresponding Author: K. Yanagi, Tel: ＋81-42-677-2494,
E-mail: yanagi-kazuhiro@tmu.ac.jp- 53 -

Figure2: Analysis result of the two-layer
one-board model of "SWCNT layer / Allayer / glass substrate"1P-14
Chemical reactions at local modified sites of single-walled carbon
nanotubes for photoluminescence modulation○Tomohiro Shiraki1,2, Tamehito Shiga1, Naotoshi Nakashima2, Tsuyohiko Fujigaya1,2,3,4
1

Department of Applied Chemistry, Kyushu University, Fukuoka, 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka, 819-0395, Japan
3
PRESTO-JST, Saitama 332-0012, Japan
3
CMS, Kyushu University, Fukuoka 819-0395, Japan.

PL Intensity (a.u.)Single-walled carbon nanotubes (SWNTs) show photoluminescence (PL) in the near infrared(NIR) region, by which development of a wide range of applications including optoelectronic
devices and imaging/sensing materials is expected. Recently, local chemical functionalizationof SWNTs has been reported to create new PL (E11*) that is redshifted with enhanced quantum
yields compared to the original PL (E11) of the pristine SWNTs.[1-3] The E11* PL emerges by
the formation of new emissive sites that have narrower band gaps and trap excitons generated
on the tubes by photo-excitation. We have been synthesizing molecularly-designed modifiers
to modulate the E11* PL properties and, have succeeded in a selective E11* wavelength shift ofthe locally functionalized SWNTs (lf-SWNTs) based on binding of specific molecules on thelocal modified sites through molecular recognition.[2,3]In this study, a new approach based on molecular systems is devised using chemical reactions
at the local modified sites of the lf-SWNTs for E11* PL modulation. Here, we employ imine
bond formation, which is a condensation reaction between aldehyde and amine groups, at themodified sites of aromatic aldehyde-modified lf-SWNTs (lfSWNTs-CHO). The reactions were conducted by mixing withvarious aniline derivatives and then, PL spectral measurements
were carried out. Fig. 1 shows PL spectra of the pristine SWNTs
and the lf-SWNTs-CHO. For the lf-SWNTs-CHO, a PL peak
appeared at 1140 nm (E11*) which is red-shifted than the E11 PL(980 nm). When p-methylaniline, p-bromoaniline or p-nitro
aniline was mixed with lf-SWNTs-CHO, the E11* PL provided
different wavelength shift values  (= λ(E11*) − λ(E11)) of154, 163, and 165 nm, respectively. The results indicate that the1000 1100 1200 1300 1400
Wavelength / nm
wavelength shift occurs with strong dependence on thechemical structures of the bound aniline derivatives in the Fig. 1 PL spectra of the pristine
imine bond formation process. Furthermore, reverse reactions SWNTs (dashed line) and the lfand an additional reaction on the imine-formed sites were found SWNTs-CHO (solid line). λex =570 nm.
to realize multistep wavelength shifts in this material.
[1] Y. Piao, B. Meany, L. R. Powell, N. Valley, H. Kwon, G. C. Schatz, Y. Wang, Nat. Chem., 5, 840 (2013).
[2] T. Shiraki, H. Onitsuka, T. Shiraishi, N. Nakashima, Chem. Commun., 52, 12972 (2016).
[3] H. Onitsuka, T. Fujigaya, N. Nakashima, T. Shiraki, Chem. Eur. J., 24, 9393 (2018).
Corresponding Author: T. Fujigaya
Tel: +81-092-802-2840, Fax: +81-092-802-2840
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 54 -

1P-15
Theory of circular dichroism in singlewall carbon nanotubes
including the depolarization effect○Yuya Iwasaki and Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Physical properties of a single wall carbon nanotubes (SWNT) are known to depend on its
geometrical structure, which is defined by a set of integers (n,m) corresponding to a chiral vector(or chirality) for rolling up a graphene layer into a nanotube. The direction of rolling up ofgraphene layer (whether clockwise or anticlockwise) will determine the handedness of the
SWNT, which means that chirality (n,m) may also have its equivalent counterpart (n+m,-m).
Recently, the different handedness of SWNT for a particular chirality can be observed by using
circular dichroism (CD) spectroscopy, in which the CD is defined as the difference of the opticalabsorption due to the left- and right-handed circularly polarized light [1,2]. Sato, et al. [3] shows
numerical calculations of CD spectra of SWNT based on electron-photon interaction by thetight binding method, in which they explained the chirality dependence of CD spectra. Theircalculation results are in good agreement with the experiment in the case of perpendicularincidence to the nanotube axis. However, the contribution of parallel incidence to the nanotube
axis does not reproduce the experimental results well.
To solve the problem of CD in the case of parallel incidence, we expect that the depolarization
field cancels out the applied electric field, and total electric field is suppressed [4,5]. Thisphenomenon is known as the depolarization effect and we should consider it to calculate theoptical absorption quantitatively. In this work, we calculate the CD spectra and dynamical
conductivity by the tight binding method. We will show numerical calculated results andconsider how much the optical absorption can be suppressed by the depolarization effect.

[1] X. Wei et al., Nat. Comm. 7,12899 (2016)[2] G. Ao et al., JACS 138, 16677 (2016)[3] N. Sato et al., Phys. Rev. B. 95, 155436 (2017)[4] S. Uryu and T. Ando, Phys. Rev. B. 74, 155411 (2006)[5] K. Sasaki, Phys. Rev. Applied. 9, 034018 (2018)
Corresponding Author: Yuya Iwasaki
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: iwasaki@flex.phys.tohoku.ac.jp- 55 -

1P-16Free-Standing Single-Walled Carbon Nanotube Thin Films Fabricated by
Wet Process with narrow bundle thickness distribution○Yuichi Kato, Atsuko Sekiguchi, Kazufumi Kobashi, Takeo Yamada, Kenji Hata
National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1
Higashi, Tsukuba 305-8565, Japan
Carbon nanotube (CNT)-based free-standing thin films are in high demand as switching or
sensing elements in MEMS devices, ultrafiltration membranes, etc. The fundamental issue
with fabricating them is regulating bundle thickness homogeneity, which is inherently
difficult due to the high proclivity for CNTs to bundle and entangle[1]. In general, uniform
structure reduces microscopic stress concentration in material and produce high mechanicalstrength. Here we demonstrate the fabrication of macroscale (2-cm-diameter) free-standing
thin single-walled CNT films with thicknesses as low as 200 nm (Fig. 1) by wet-processing.
We prepared single-walled CNT suspensions by ultrasonication
using different liquid media shown in Table 1 to control bundle
thickness distribution of the films. We prepared CNT films (film-I, -II)by blade-coating of the CNT suspensions. We used identical CNT
starting materials and processing methodology.
Film-I shows maximum tensile strength of 166 MPa, which is Fig. 1 Photograph of a
CNTfree-standing
higher than that of film-2 (33 MPa).
We compared bundle thickness distribution of the films. Film-I film.
shows narrower bundle thickness distributions (uniform structure)than the other samples, which could contribute to the observed high mechanical strengths.
To study the origin of the uniformity difference, we measured size of CNT aggregates inparent suspensions by flow image analyzer. We found that well-stabilized suspensions using
surfactants with higher fractions of smaller aggregates lead to CNT films with uniform
structures that exhibit high mechanical performances.
Our work presents a bottom-up approach of tailoring ultrathin freestanding CNT films by
wet-processing, a versatile and potentially scalable fabrication methodology.
Table 1. Prepared CNT films, tensile strength, and bundle thickness distribution.
Name

Solvent, Surfactant

Tensile Strength[MPa]

Bundle thickness
10th -90th percentile [nm]film-I

toluene, FC12

166

7-11

film-IIpropylene glycol

3319-109FC12:10-dodecyl-7,8-dimethyl-10H-benzo[g]pteridine-2,4-dione[1] K. Kobashi et al. Chem. Sci. 4, 727 (2013)
Corresponding Author: Atsuko Sekiguchi
Tel: +81-29-861-4611, Fax: +81-029-861-4851,
Web: http://www.nanocarbon.jp/
E-mail: atsuko-sekiguchi@aist.go.jp- 56 -

1P-17
Modification of multi-walled carbon nanotubes with photoreactive silane
coupling agent: application for highly adhesive surface coating○Tomoya Takada, Seisyu Takakuwa, Yuichiro Kitamura
Department of Applied Chemistry and Bioscience, Chitose Institute of Science and Technology,
Chitose 066-8655, Japan

Fabrication of hybrid materials containing carbon nanotubes (CNTs) has been paid muchattention from an industrial viewpoint. Coating of CNTs onto transparent substrates such as
glass reveals preparation of novel transparent conductive materials. Especially,
immobilization of CNTs on the substrate surface through chemical bond is expected to be a
promising tool for fabrication of weatherable CNT coatings. In this work, photoinduced
modification of multi-walled CNTs (MWCNTs) with photoreactive silane coupling agent was
examined and the modified MWCNTs were employed to fabricate chemically immobilized
MWCNT coating on glass surface (Fig. 1). Benzyl-type radicals have been known tosmoothly generate by photochemical bond scission of benzyl halide derivatives such as
chloride. This reaction can be used to make sidewall modification of MWCNTs; it has been
known that organic radicals smoothly attack CNT surface to form covalent bonds.
Materials used were MWCNTs provided by Nanocyl, Belgium and p-(chloromethyl)phenyltrimethoxysilane (PCMPS) provided by Alfa Aesar, USA. Firstly, PCMPS and
MWCNTs were mixed in methanol and irradiated with ultraviolet light from a xenon lightsource under continuous stirring at room temperature. Then soda-lime glass pieces weredipped into the mixture. The PCMPS attached on MWCNT surface was hydrolyzed by adding
aqueous acetic acid solution to convert -OCH3 to -OH. The -OH groups generated by thehydrolysis can form hydrogen bonds with silanol groups on glass surface; MWCNTs can be
attached on the glass surface through the interaction. The glass pieces coated with MWCNTs
were then dried at 65 ºC, washed with methanol and heated with a muffle furnace to form
-Si-O-Si- linkages between MWCNT surface and glass surface. The fabricated samples werecharacterized
by
means
of
X-ray
photoelectron spectroscopy (XPS), Raman
spectroscopy, and so on. Adhesiveness of the
MWCNTs coating was examined withscotch-tape test.
The firmly attached MWCNT layer weresuccessfully fabricated on the glass surface by
the method described above. The layer was
not taken away even after several scotch-tapeadhesion-peeling cycles. Other results ofcharacterization will be shown at the
symposium.
CH2Cl

PCMPS

MeO

OMe
OMe

UV irradiation in MeOH

MWCNTs

CH2

CH2

Si

Si

Si

(C-Cl scission andbenzyl radical formation)

MeO

OMe MeO
OMe

OMe
OMe

Silane-functionalized MWCNTs

CH3COOH aq.
(hydrolysis of -OMe groups)

MWCNT layer

CH2

CH2

CH2

soda-lime glass

heating at 150 ºC

HO

Si

OH

OH

HO

Si

OH

OH

CH2

(-Si-O-Si- bond formation)

O

Si
O

O

Si
O

O

Glass surface

Fig. 1. Process for fabrication of MWCNT layer
on glass surface.
Corresponding Author: T. Takada
Tel: +81-123-27-6056, Fax: +81-123-27-6056,
Web: http://www.geocities.jp/takada719/cisttakada/index.html
E-mail: t-takada@photon.chitose.ac.jp- 57 -

1P-18Determination of association constants of pyrene- andporphyrin-based nanotweezers and nanocalipers with SWNTs○ Alejandro López-Moreno, and Naoki Komatsu
Graduate School of Human and Environmental Studies, Kyoto University, 606-8501 Kyoto

Association
constants
between soluble molecules
andinsoluble
carbonnanotubes can be determinedusingaquantitative
thermogravimetric method
reported recently [1]. Here,we applied this method todetermine the association
constants of SWNTs withpyrene (1), porphyrin (4), andtheir derivatives including
nanotweezers (2, 5) andnanocalipers (3, 6) shown in Figure 1 Structures of pyrene 1, pyrene-based nanotweezers 2, pyrenebased nanocalipers 3. porphyrin 4, phorpyrin-based nanotweezers 5, andFigure 1 [2]. The association porphyrin-based nanocalipers 6.
constants (Ka) determined in
DMF are shown in Table 1. The nanotweezers (2 and 5) and nanocalipers (3 and 6) exhibit
much higher association constants than the monomers (1 and 4) by two and three orders ofmagnitude, respectively. This can be
Table 1 Association constants (M-1) of 1 – 6 with SWNTs in DMF
interpreted qualitatively by the(6,5) CoMoCat HiPCO
number of interactions between the
Pyrene 1
12.6 ± 0.6
9±1
host molecules with SWNT surface
3
Nanotweezers 2 (4 ± 2) x 10
(2.0 ± 0.4) x 103
tostabilize
thecomplexes.
4
Nanocalipers 3(5 ± 2) x 10
(6 ± 2) x 104
3
Porphyrin-based nanotweezers andPorphyrin 4a(3.3 ± 0.9) x 10
(2.4 ± 0.8) x 103
nanocalipers (5 and 6) showed ten
Porphyrin 4b(4 ± 1) x 103(4.2 ± 0.5) x 103
4times larger association constants
Nanotweezers 5 (7 ± 3) x 10
(5 ± 2) x 104
5than pyrene-based ones (2 and 3),
Nanocalipers 6(4 ± 2) x 10
(4 ± 1) x 105
though the constants of porphyrins(4) are hundred times larger thanthose of pyrene (1). The difference between porphyrin and pyrene is considered to be causedby higher flexibility and wider -conjugated system in the porphyrins than pyrenes [3].
[1] A. de Juan, A. López-Moreno, J. Calbo, E. Ortí, E. M. Pérez, Chem. Sci. 6, 7008 (2015); J. Calbo, A. LópezMoreno, A. de Juan, J. Comer, E. Ortí, E. M. Pérez, Chem. Eur. J. 23, 12909 (2017); A. López-Moreno, N.
Komatsu, the 54th FNTG general symposium, 1-4 (2018).
[2] G. Liu, A. F. M. M. Rahman, S. Chaunchaiyakul, T. Kimura, Y. Kuwahara, N. Komatsu, Chem. Eur. J. 19,
16221 (2013); G. Liu, F. Wang, S. Chaunchaiyakul, Y. Saito, A. K. Bauri, T. Kimura, Y. Kuwahara, N. Komatsu,
J. Am. Chem. Soc. 135, 4805 (2013).
[3] G. Liu, Y. Miyake, N. Komatsu, Org. Chem. Front., 4, 911 (2017).
Corresponding Author: A. López-Moreno
Tel: +75-753-7871, E-mail: lopez.alejandro.74a@st.kyoto-u.ac.jp- 58 -

1P-19Chemical reaction analysis of cobalt oxide clusters with ethanol by FT-ICR
mass spectrometer○Ryohei Yamada1, Kaoru Hisama1, Ken Mizutani1, Shohei Chiashi1, Shigeo Maruyama1,2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy NanoEnginerring Lab. National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki. 305-8564, Japan[1] S. Inoue et al. Jpn. J. Appl. Phys., 47-4, 1931-1936 (2008).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5841-6983,
Web: http://www.photon.t.u-tokyo.ac.jp/index-j.html
E-mail: maruyama@photon.t.u-tokyo.ac.jp

Intensity (arb. unit)

Single-walled carbon nanotubes (SWCNTs) are expected as useful materials of various
devices and chemical vapor deposition (CVD) method is one of the most common methods to
produce SWCNTs. In CVD method, SWCNTs are grown from metal catalyst by supplying gas
molecules containing carbon atoms. Although the growth mechanism has been investigated, thereactions between the catalyst and the carbon source gas are still unclear. The reactivity of nanoparticles is different from that in bulk, and it is regarded as a key point of SWCNT growth. In
addition, the reactivity varies depending on the oxidation state. However, it is difficult to reveal
the chemical reactions on the nano-particles. Alcohol catalytic CVD (ACCVD) method is oneof the CVD methods. In ACCVD method, cobalt and ethanol are often used as the catalyst andcarbon source, respectively.
Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer makes it possible toanalyze the chemical reactions between atom clusters and gas molecules. Cobalt non-oxide
clusters reacted with ethanol, and “simple chemisorption” and “dehydrogenated chemisorption”
were observed [1]. In this study, the chemical reactions between cobalt oxide clusters andethanol were observed by FT-ICR mass spectrometer. Clusters were trapped in the FT-ICR cell,and reaction was observed after oxygen and ethanol were injected. Cobalt oxide clusters(ConOm+) with different n and m were observed after oxidization of cobalt, and Co3O3+ cluster
was one of the most generated clusters. The spectra in Fig. 1 shows the reaction of Co3O3+. H2
adsorption and C2H6 adsorption were observed. Reaction between Co3O3+ and ethanol resulted
in H2 adsorption. As ethanol reaction proceeded, Co3O3(C2H6)+ were generated and the numberof Co3O3H2+ decreased. It indicated that ethanol adsorption with dehydration probably occurredon Co3O3H2+. These results show that reactivity of cobalt oxide clusters is different from thatof non-oxide clusters since main reaction of non-oxide clusters is “simple chemisorption” [1].
In addition, the other reactions were observed on+
Before reaction
Co3O3+. For example, Co3O3+ and six ethanol
Co3O3
molecules reacted, and three H2O and one CH4O
are desorbed. This reaction resulted in C8H20O
adsorption.
+H2
EtOH reaction (0.4 s)
+C2H6

(×8)
EtOH reaction (0.8 s)+C8H20O
(×8)

200

300

m/z

400

Fig. 1 Spectra of Co3O3+ cluster andproducts resulted in ethanol reaction.

- 59 -

1P-20Fractal analysis of self-organized carbon nanotube forest structure○Adam Pander1, 2, Takatsugu Onishi1, Fumiya Nagamine1, Sachio Hayashi1, Akimitsu Hatta1,
2, Hiroshi Furuta1, 2
1

Dep. of Electronic and Photonic Systems Engineering, Kochi Univ. of Tech., Kochi 782-8502, Japan
2
Center for Nanotechnology, Kochi Univ. of Tech., Tosayamada, Kami, Kochi, 782-8502, JapanA dependence between optical properties of carbon nanotube (CNT) forest and its structure
is generally known. In CNT forest, local regions of different density of CNTs exist and are themain reason behind the variation of properties throughout the forest. Local fluctuations of theformation process result in the variation of the agglomeration of a catalyst material and giverise to a diverse distribution of catalyst sizes and densities throughout the single sample. Undercertain conditions, the formation of small catalyst particles occurs, implying a smaller distance
between each grain, which results in a higher areal density, while the agglomeration of bigger
particles requires more of the catalyst material, thus, the distance between individual particles
increases. The size and density of catalyst particles are closely correlated to the diameter anddensity of CNTs within the forest [1]. Despite this fact, theself-correlation between the distribution of low and highdensity areas in CNT forest, and the local properties remains
unknown. To quantify the degree of CNT forest density andresultant properties, a scale dependent parameter named
fractal dimension was used.
Fractals are complex geometric designs that repeat
themselves or their statistical properties on many scales, andbecause of that are “self-similar”. Also, in the CNT field,
fractal geometry was used for the quantitative description of
the morphology of CNTs [2, 3]. This approach was adapted
before to study the conductance and thermoelectric propertiesof CNTs and to investigate the adsorption of gases in CNTs.
The purpose of this work is to study the self-correlationand self-similar organization between the size and density ofcatalyst nanoparticles and CNTs, and the local fluctuations ofproperties. In the presented study, the fractal dimension and
Figure 1. (a) AFM image oflacunarity are measured and the fractality is determined. The
catalyst surface after annealing
study of the self-correlation and the variation between areasand calculated fractal
with different density offers a new and important explanation
dimension.
of the diversity of optical properties of CNT forest.
This work was supported by KAKENHI No. 17K06205, 24560050, and the joint research
project of Inst. of Laser Eng., Osaka University (2017B1-FURUTA).
[1]. Pander, A., Hatta, A. & Furuta, H., Appl. Surf. Sci. 371, 425–435 (2016).
[2]. Smajda, R., Kukovecz, Á., Kónya, Z. & Kiricsi, I., Carbon N. Y. 45, 1176–1184 (2007).
[3]. Sun, C.-H., Li, F., Ying, Z., Liu, C. & Cheng, H.-M., Phys. Rev. B 69, 33404 (2004).
Corresponding Author 1: H. Furuta
Tel: +81-(0)887 572 211
E-mail: furuta.hiroshi@kochi-tech.ac.jp

Corresponding Author 2: A. Pander
Tel: +81-(0)80 2983 4051
E-mail: adam.michal.pander@kochi-tech.ac.jp- 60 -

1P-21
Effects of catalysts and growth conditions on growth process of individual
SWNTs studied by digital isotope labeling○Shun Yamamoto1, Keigo Otsuka2,3, Bunsho Koyano1, Taiki Inoue1, Rong Xiang1, Shohei
Chiashi1, Shigeo Maruyama1,4
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
Quantum Optoelectronics Research Team, Riken Center for Advanced Photonics, Wako,
351-0198, Japan
3
Nanoscale Quantum Photonics Laboratory, Riken Cluster for Pioneering Research, Wako,
351-0198, Japan
4
Energy NanoEngineering Lab, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, 305-8564, Japan
2

Single-walled carbon nanotubes (SWNTs) is highly expected toward the applications ofelectronic devices. Researchers have studied the nucleation and growth rates of SWNTs
experimentally [1] for realizing chirality-controlled and high-density growth of SWNT arrays.
In addition, recently we reported a new method for tracing time-resolved growth profiles ofindividual SWNTs by embedding digitally-coded isotope labels [2]. We introduced the different
ratio of 13C ethanol as labels in a pulsed manner (Fig. 1(a)) and detected labels by Raman
mapping measurement (Fig. 1(b)).
In this report, we studied the effects of catalysts and temperature on growth profiles of
SWNTs by a CVD method on r-cut quartz substrates. We utilized iron and cobalt as catalysts
and changed temperature between 750  850 C. All SWNTs from both catalysts were grownby the base-growth mode. The growth rates of SWNTs were faster and final lengths of themwere longer at higher growth temperature. As for the incubation time, the SWNTs from ironcatalysts had large variety, but many SWNTs from cobalt catalysts started growing just after
introducing ethanol (Fig. 1(c,d)). Moreover, the SWNTs from cobalt catalysts had shorter
lifetime than those from iron catalysts.

Fig. 1 (a) Introduction of labels by 13C ethanol. (b) Raman mapping image colored by the shifts of G-band peaks.
(c,d) Growth rates and incubation time of SWNTs grown at 850 C from iron and cobalt catalysts.
[1] R. Rao et al., Nat. Mater. 11, 213 (2012). [2] K. Otsuka, S. Yamamoto et al., ACS Nano 12, 3994 (2018).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6408, Fax: +81-3-5841-6408,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 61 -

1P-22
Local structure and properties of polycyclic aromatic hydrocarbon
molecule encapsulated in single-walled carbon nanotubes studied bymolecular dynamics simulations(III)○Ryo Nagai1, Yosuke Kataoka3 and Hironori Ogata 1,2
Graduate School of Sci. and Engin., Hosei University, Koganei, 184-8584, Japan
2
Research Center for Micro-Nano Technology, Hosei University, Koganei, 184-0003, Japan
3
Research Center for Computing and Multimedia Studies, Hosei University, Koganei,
184-8584, Japan

1

Carbon nanotubes (CNTs) are one of the most promising materials due to their superior
electronic, thermal and mechanical properties. Single-walled carbon nanotubes (SWNTs)
have hollow spaces of about several nm in diameter. Various functional molecules such as
fullerenes can be encapsulated in the hollow space, and it is expected that new functions will
be developed by capsulation. It has been reported that columnar layered polycyclic aromatichydrocarbon(PAH) molecules such as coronene encapsulated in SWNTs can exhibit uniqueluminescence properties depending on their molecular orientations. We have been investigat-ed the local structures and properties of various kinds of PAH molecules encapsulated in
SWNTs systematically. In this study, molecular dynamics simulations were performed toclarify the packing structures of encapsulated perylene molecules in different chiral SWNT.
Figure 1 shows the snapshots of the orientation structure of perylene molecules encapsulated
in SWNT of equal diameter with different chirality at 298 K. It was found that the differencein chirality of SWNT caused a difference in the orientation of the encapsulated perylene
molecules. Detailed results will be discussed in the conference.
(a)

(b)

Figure 1. Snapshots of (a) perylene@(12,9)SWNT and (b)perylene@(18,1)SWNT at 298 K.
References:[1] A. V. Talyzin et al., Nano Lett.11(2011)4352-4356.
[2] Miho Fujihara, et al., J. Phys. Chem. C 116(2012)15141−15145.
[3] Alexander I. Chernov et al., Phys. Status Solidi B 251(2014)2372–2377.
[4] Y. Sakane, et al., AIP ADVANCES 5 (2015)117113.
[5] Y.Joko, et al., Phys. Chem. Chem. Phys.19(2017)27704-27715.
[6] T.Koyama, et al., J.Phys. Chem. C 122(2018)5805-5812.
Corresponding Author: H. Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp- 62 -

1P-23
Analysis of graphene-h-BN heterostructure growth mechanism
from ethanol and ammonia borane○Hayato Arai1, Naomasa Ueda1, Daisuke Ito1, Taiki Inoue1, Rong Xiang1, Shohei Chiashi1, Shigeo
Maruyama1, 2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy Nanoengineering Lab, National Institute of Advanced Industrial Science andTechnology(AIST), Ibaraki 305-8564, Japan

Graphene has been attracting a wide attention as a promising materials for electronic devices due toits prominent properties, such as carrier mobility[1]. In addition, its thickness of one atom can open up
a possibility to realize smaller devices than before. However, properties of graphene are easily
degraded by impurities or dangling bonds of substrates because of its surface sensitivity. To suppress
such effects, hexagonal boron nitride (h-BN) has been expected as a substrate or protective material
for graphene devices. It has been reported that carrier mobility of graphene on h-BN was higher by
one order of magnitude compared to that on SiO2[2]. Although there are some reports about successful
growth of graphene and h-BN heterostructure[3,4], controllable growth of them is still challenging.
Catalyst substrates [3] or precursor gases [4] sometimes etches away atomic layers grown on
substrates.
In this work, we performed sequential CVD growth of h-BN and graphene on copper substrates. We
used ammonia borane and ethanol as precursors of h-BN and graphene, respectively. For h-BN growth,
CVD furnace was heated up to 1050 ℃. To supply precursor of h-BN, ammonia borane was heated at
60 ℃ for 10 min. After h-BN growth, the temperature of the CVD furnace was cooled down quickly
to 900 ℃. When the temperature reached to 900 ℃, we began to supply ethanol to grow graphene.
Figure 1(a) shows SEM image of h-BN and graphene grown on copper. Merged triangular flakes anddarker circular flakes on them are regarded as h-BN and graphene, respectively. Raman spectrum fromthe heterostructure was shown in Fig. 1(b).

Fig. 1 (a) SEM image of h-BN and graphene.
[1] J. H. Chen, et al., Nat. Nanotechnol., 3, 206 (2008).
[2] C. R. Dean, et al., Nat. Nanotech., 5, 722 (2010).
[3] G. Kim, et al., Nano Lett., 15, 4769 (2015).
[4] T. Gao, et al., Nat. Com., 6, 6835 (2015).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5841-6421,
Web: http://flex.phys.tohoku.ac.jp/japanese
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 63 -(b) Raman spectrum from heterostructure.

1P-24
Mechanically coupled graphene drum-type mechanical-resonators○Keisuke Akazawa, Yuta Mochizuki, Taichi Inoue, Daiki Yoshikawa, Kuniharu Takei,
Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai 599-8531, Japan

Amplitude (a.u.)Graphene is suitable for high performancemechanical resonator (MR) because of extremely
low mass and high Young’s modulus. Coupledmechanical resonators are one of emerging
components for ultralow power information
processing mimicking the superposition of states.
Here, we demonstrate the coupled MRs consisting of
two drum-type graphene MRs (G-MRs) connectedwith a graphene bridge.
 Monolayer graphene was transferred onto theFig.
1
Measurement
setup
SiO2 (500 nm)/Si substrate and was etched by O2
plasma to form the graphene stripe with the width of
2 m. Next, the SiO2 layer underneath of thegraphene stripe was etched by buffered HF, and driedby using supercritical drying. Figure 2 shows the GMRs coupled with a graphene bridge with a width of
GG-MRA
2 m, where the radii of the fabricated G-MRs was 3
GG-MR
Bm. One of G-MRs was driven by the photothermalmethod using intensity modulated laser with a
Fig. 2 SEM image of the graphene
wavelength of 660 nm as indicated by a pink arrow
resonator and the laser positionin Fig. 2. The resonance properties of each G-MR
0.0015were individually measured using another laser with
f0B
G-MR A
a wavelength of 521 nm as indicated by green arrows
G-MR Bin Fig. 2.
f0A
0.001
Figures 3 shows the resonance curves of G-MR A
and G-MR B, where only the G-MR A was actuated.
The resonances of both of G-MRs were successfully
0.0005observed even under this actuation condition. The
resonance frequencies of G-MR A and B are 11.8 and0
12.1 MHz, respectively, where the quality factors for
10
11
12
13
14
15
both G-MRs are ~ 200. In addition, we observed
Frequency (MHz)complicated coupled resonances at higher frequency
Fig. 3 Resonance curves of G-MR A andaround 12.9 MHz. Similar resonance curves were
G-MR B, where the G-MR A is actuated.
also observed under the actuation of the G-MR B.
These indicate that the two G-MRs are mechanically coupled through the graphene bridge.
Acknowledgements This work was partially supported by KAKENHI Grant Numbers 15H05869, 16H00920,
16K14259, 16H06504, and 17H01040.
Corresponding Author: K. Akazawa, Tel: +81-72-254- 9261, E-mail: akazawa-4@pe.osakafu-u.ac.jp- 64 -

1P-25Graphene mechanical resonator decorated with quantum-dots○Masashi Hori, Yuta Mochizuki, Taichi Inoue, Daiki Yoshikawa, Kuniharu Takei
Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai 599-8531, Japan
Graphene is widely applied to nanomechanical resonator (MR) because of its

the liquid. Here, we demonstrate thefabrication of G-MR decorated with Q-dot
through floating mist particles including the
Q-dot generated by a nebulizer.
Figure 2 shows a fluorescence image ofa drum G-MR decorated with Q-dots. A few
Q-dots are observed on the G-MR region,
where the number of particles on G-MR canbe roughly controlled by the time forattachment process. Figure 3 shows aresonance curve of the Q-dot decorated GMR. Resonance frequency and its quality
factor are 6.88MHz and 341, respectively.
Thus, we have successfully attached Q-dots
on G-MR without breaking. We believe thatthe proposed fabrication process isapplicable for loading other nanoparticles
on nano-MR consisting of atomically thinmaterials.

- 65 -

Fig. 1 Graphene resonator decorated with Q-dot.

Drum type
G-MR

Au

6 µm

QQ-dotFig. 2 Fluorescence microscope image of Q-dot on
the G-MR

Amplitude (arb. unit)

excellent electrical and mechanicalproperties. In order to append additional
functionality, decoration of graphene withfunctional nanoparticle such as quantum dot(Q-dot) is one of promising routes.
However, the suspended G-MR is veryfragile, so that it is hard to decorate G-MR
with Q-dot as shown in Fig. 1. Especially,
the wet process destroy the suspended
structure because of the surface tension of

0.00120.001
0.00080.00060.00040.0002
0
6.6

6.7

6.8

6.9

7

Frequency (MHz)7.1

Fig. 3 Resonance curve of the G-MR decorated
with Q-dot measured in vacuum.
Acknowledgements This work was partially
supported by KAKENHI Grant Numbers 16H00920,
16K14259, 16H06504, and 17H01040.
Corresponding Author: M. Hori, Tel: +81-72-2549261, E-mail: hori-4@pe.osakafu-u.ac.jp

1P-26
Reduction reaction kinetics of individual graphene oxide sheet
studied by Twilight fluorescence microscopy○Katsuki Kanazawa, Masahito Sano
Department of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Japan1-

Twilight fluorescence (TwiF) microscopy can image individual single-layer graphene sheet
floating in a solution [1]. A highly concentrated dye solution is added to a graphene solution
and is placed on a glass plate. An excitation beam is incident on the glass/solution interface ata near total internal reflection angle. Because the beam is rapidly absorbed by the concentrated
dye, fluorescence emission is localized to within a sub-micrometer distance from the glass
interface. If there is a difference between the fluorescence from the free dye in solution and one
from the dye interacting with the graphene sheet, the sheet can be visualized in real time.
Graphene oxide (GO) can be made in massquantities and is readily dispersible in various
solvents. GO has been used as an ink and a
precursor for composite materials. In many
instances, GO is reduced to recover some of the lost
properties of graphene for final applications. Thus,
it is important to understand how the reaction
proceeds for maximizing efficiency. In this study,
the reduction reaction of single-layer GO sheet byvitamin C is followed at an individual sheet-level ina reacting solution by TwiF microscopy.
With the present experimental condition, GO Fig. 1 TwiF image of GO sheets before reaction.
appeared darker as the reaction proceeded.
2.4
Because the imaged GO sheets were away from theglass interface, the contrast was mainly due to theincreasing light absorption. We used three kinds ofdyes (2 green, 1 red) in two different solvents at
2.0
various vitamin C concentrations. For nearly allcases, the best fit was obtained by a logarithmic
function. This implies that the transmittance
1.6
decreases logarithmically, regardless of the dye,solvent, and concentration. A logarithmic kinetics
is known as the Elovich model and is often foundin heterogeneous chemisorption systems under a1.2
condition that the activation energy increases with
0
1000
2000
3000
the surface coverage.
Time (sec)[1] Y. Matsuno, Y. Sato, H. Sato, M. Sano, J. Phys. Chem.
Lett. 2017, 8, 2425-2431.
Corresponding Author: M. Sano
Tel: +81-238-26-3072,
Web: http://sanolab.yz.yamagata-u.ac.jp/
E-mail: mass@yz.yamagata-u.ac.jp- 66 -

Fig. 2 Temporal change of contrast of a single GO
sheet. A curve is the least-squared log function.

1P-27
Synthesis and Photophysical Properties of Covalently Linked Polycyclic
Aromatic Hydrocarbon-Porphyrin Systems○Hiroki Yamada1, Takuma Hanaoka1, Tomokazu Umeyama1, Jaehong Park1,
Hiroshi Imahori1,2
12

Graduate School of Engineering, Kyoto University, Kyoto 615-8530, Japan
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 615-8510, Japan

Recently, photofunctionalization ofgraphenes using π-aromatic units has
attracted much attention due to theirpotential for the applications in artificial
photosynthesis and solar energy
ZnP-HBC
conversion.
Polycyclicaromatichydrocarbons(PAHs)
includinghexa-peri-hexabenzocoronene (HBC)
are partial structures of graphene andcan be regarded as model molecules of
ZnP-GNRO
graphene. In this study, we utilized two
nanographene molecules with different
sizes, i.e., a HBC and a PAH moleculeswith graphene nanoribbon oligomer(GNRO) structure consisting of 114 sp2
HBC-ref
GNRO-refcarbons, to be linked with two zinc
ZnP-ref
Figure1.
Structures
of
ZnP-HBC,
ZnP-GNRO,
HBC-ref,
porphyrin (ZnP) units through ap-phenylene spacer at the periphery as GNRO-ref and ZnP-ref.
model systems to elucidate thefundamental photophysical properties of nanographenes.
The fluorescence spectrum of ZnP-HBC excited at 360 nm, where the absorption intensity
ratio of ZnP and HBC is 1 : 7, exhibited two broad peaks at 604 and 656 nm. This spectrum
coincided well with that of ZnP-ref, suggesting the occurrence of energy transfer (EnT) fromthe singlet excited state of HBC (1HBC*) to ZnP in ZnP-HBC. On the other hand, the shapeand intensity of the fluorescence spectrum of ZnP-GNRO with the excitation at porphyrin
Soret band (422 nm) born a remarkable resemblance to those of GNRO-ref, indicating that theefficient EnT from the singlet excited state of ZnP (1ZnP*) to GNRO occurs in ZnP-GNRO.
The narrowed optical bandgap of the GNRO moiety due to the expanded π-conjugation
system switched the EnT direction. To get deep insight into the interaction between
nanographenes and ZnP in the excited states, time-resolved transient absorption (TA) spectra
measurements were conducted. When the HBC moiety in ZnP-HBC was mainly excited, TA
spectra at 100 ps and 2.1 ns matched well with those of ZnP-ref, corresponding to the singlet
and triplet excited states of ZnP. On the other hand, the shapes of the TA spectra of
ZnP-GNRO largely resembled those of GNRO-ref. These results were in good accordancewith the results of steady-state fluorescence.
R

N

N

N

N

R

Zn

Zn

R

N

N

N

N

R

R

R

R R

R R

Zn

R =

N

N

R

N

N

N

N

R

R

R R

R R

R

R

R R

R R

R

Zn

N

N

N

N

R

Corresponding Author: H. Imahori
Tel: +81-75-383-2566, Fax: +81-75-383-2571,
Web: http://www.moleng.kyoto-u.ac.jp/~moleng_05/
E-mail: imahori@scl.kyoto-u.ac.jp- 67 -

R

R

R R

R R

R

Zn

N

N

1P-28
Moiré superlattices of graphene on Cu (111)○Yui Ogawa and Yoshitaka Taniyasu
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan

Moiré superlattices appear in graphene on a metal substrate due to the lattice mismatch andstacking rotation between graphene and the substrate. The Moiré superlattices are valuable totune electrical band structure. In this study, we analyze moiré superlattices in graphene grownon Cu (111) grown observed by scanning tunneling microscopy (STM).
Graphene was grown on pre-growth annealed Cu foil having mainly (111) plane bymicro-wave plasma chemical vapor deposition method with methane gas. STM measurements
were performed with VT-STM (Omicron) with Pt-Ir tip at room temperature below 6.0 × 10-10
Torr after cleaning the sample surface at 500 C for 20 min.
We observed several moiré superlattices with the periodicities (moiré length, L) of 3.0 – 4.2
nm. The moiré angle φ is the angle of moiré unit cell respect to Cu (111).Fig. (a) is one of
STM topography image with 3.5 nm moiré length. Fig. (b) shows a correlation map of Moiré
length and angle as a function of rotation angle of graphene lattice against to Cu (111) adaptedfrom an analysis method theoretically proposed by P. Zeller et al [1]. The correlation were
calculated regarding typical three type of reciprocal lattice vectors of moiré in k-space:ሬԦ୑୭୧୰± = (0,1)gra - (0,1)Cu, R30-moiré ‫ܭ‬ሬԦ୑୭୧୰± = (1,1)gra - (0,2)Cu, and R18.5R0-moiré ‫ܭ‬ሬԦmoiré ‫୑ܭ‬୭୧୰± = (1,2)gra - (0,3)Cu. The plotted experimental data on the Fig. (b) matched wellto the calculated correlation in case of R0- moiré, so that the observed moiré superlattices canbe assigned as R0- moiré. Our result suggested that P. Zeller et al’s analysis can be great use
in a characterization of experimentally observed moiré in graphene on the metal substrate.

Fig. (a) STM topography image of graphene on Cu (111). Moiré superlattice is marked by dotted circles.
(b) Correlation map of moiré length and angle of R0- (black), R30-(gray), and R18.5-(light gray) moiré forgraphene on Cu (111). The inset of (b) is the moiré length of R0- moiré as a function of rotation angle ofgraphene against to Cu (111).
[1] P. Zeller et al., New. J. Phys. 16, 083028 (2014).
Corresponding Author: Y. Ogawa
Tel: +81-46-240-3423, Fax: +81-46-240-4718
Web: http://www.brl.ntt.co.jp/group/shitsuko-g/index-j.html, E-mail: ogawa.yui@lab.ntt.co.jp- 68 -

1P-29Site-dependence of relationships between photoluminescence and applied
electric field in monolayer and bilayer molybdenum disulfide○Junji Nozaki1, Hiroyuki Nishidome1, Mina Maruyama2, Susumu Okada2, Satoshi Kusaba3,
Koichiro Tanaka3, Keiji Ueno4, Yohei Yomogida1, and Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571,
Japan
3
Department of Physics, Graduate School of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502,
Japan
4
Department of Chemistry, Graduate School of Science and Engineering, Saitama University,
Sakura-ku, Saitama 338-8570, Japan

2

Understanding of the optical properties
at a specific site in 2D materials is
important for future applications [1] [2].
Here, we investigated the site-dependenceof the relationship between thephotoluminescence spectrum and anelectric field in exfoliated monolayer andbilayer molybdenum disulfide (MoS2)
using a technique combining scanningnear-field optical microscopy (SNOM)
and a bias voltage application from thecantilever as shown in Fig. 1(a)(EF-SNOM) [3]. We found clearly
different behaviors between PL atmonolayer sites and bilayer sites with theapplication of a bias voltage. At themonolayer sites, a decrease of the A-peakintensity was observed with the positive Fig. 1 (a) A schematic illustration of EF-SNOM
shift of the bias voltage, and the PL measurements of monolayer and bilayer MoS2. (b) Typicalintensity exhibited a strong site changes in the PL spectrum at a bilayer site upon
dependence. At the bilayer sites, weclarified that carrier injection at a site in application of a bias voltage. The relationship between
the bilayer region induces an increase in normalized PL and bias voltage for the (b) A peak and (c)the A-peak intensity and a decrease in the I peak at five different sites in bilayer regions.
I peak (Fig. 1(b-d), which was consistent
to the results of our DFT calculations.
As shown in this study, our EF-SNOM technique is a very powerful tool to understand thebackground of site-dependent optical properties of 2D materials.
[1] X. Yin et al., Science 344, 488 (2014).

[2] Y. M. He et al., Nat. Nanotechnol. 10, 497 (2015).

[3] J. Nozaki et al., Sci Rep 7, 46004 (2017).
Corresponding Author: K. Yanagi
Tel: +81-(0)42-677-2809, Fax: +81-(0)42-677-2483

E-mail: yanagi-kazuhiro@tmu.ac.jp- 69 -

1P-30Competition between electron and hole dopingby hydrazine molecular adsorption on MoS2
⃝N.Kodama1, Y.Ishiguro2, K.Takai1,2
12Graduate school of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, JapanThe carrier injection to 2D-materials by molecular adsorption is one of important strategy tocontrol its properties. Especially the study of electron doping is important however those reports
are few. A tunable electron doping by hydrazine aqueous is known for graphene through theprecise controlling of the hydrazine concentration and the adsorption time [1, 2]. Molecular dopingis also effective for MoS2 which has similar structure to graphene and sensitive to surrounding
environment. In this study, MoS2 mono layer adsorbed with hydrazine is investigated in order toclarify the kinetics of doping by Raman and PL measurements.
Hydrazine aqueous was dropped on MoS2 mono layer prepared by mechanical exfoliation on
90 nm SiO2/Si substrate, followed by drying by air blow and immediate Raman and PL
measurements with an excitation wavelength of 532 nm at room temperature. The same
operation was repeated while varying the adsorption time or concentration of hydrazine.
The FWHM of A1g of Raman spectrum for MoS2 mono layer is sensitive to its doping level [3].
As shown in Fig. 1, the kinetics of A1g FWHM for 10 % is shorter than that for 1 %, indicating
good tunability of the kinetics of doping by the hydrazine concentration in spite of the opposite
behavior for 0.1% similar to 0 % (water adsorption). Change in the compositions of the excitonand trion peak in PL spectra shown in Fig.2 indicates successful electron doping for 10 % and
1 % but hole doping for 0.1 % and 0 %. Here it should be noted that molecular doping proceeds
through the electrochemical process, so doping using aqueous solution involves the simultaneous
doping by surrounding species. These suggests hole doping by oxygen in ambient air might occur
at the same time due to the presence of water [2]. Tunable doping by hydrazine aqueousconcentration is accompanied with the competition between electron doping by hydrazine andhole doping by oxygen in ambient atmosphere.
This project was supported by JSPS and RFBR under the Japan - Russia Research Cooperative
Program.

ΔFWHM (cm-1)

1.4

1%

0.8

10 %

0.2

0.1 %

-0.4
-1

0%
0

1200
2400
Time (s)3600

Fig.1 Kinetics of A1g of Raman spectra for MoS2 adsorbedwith various concentration of hydrazine
Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002- 70 -

Intensity (arb.unit)[1] Z.Chen et al., APPLIED PHYSICS LETTERS 106, 091602 (2015), [2] T.Umehara et al., FNTG (2015)[3] B.Chakraborty et al., PHYSICAL REVIEW B 85, 161403(R) (2012)

1.6

10 %
1%
0.1 %
0%
pristine
1.85
PL Shift (eV)2.1

Fig.2 PL spectrum for MoS2 pristine and adsorbedwith various concentration of hydrazine at 3600 s

1P-31
Carrier transport properties of WS2 nanotubes obtained from solvothermallysynthesized W18O49 nanowires○Yohei Yomogida and Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Tungsten disulfide (WS2) nanotubes are cylindrical multiwall nanotubes with various
diameters. WS2 nanotubes exhibit unique tunability of band gap and carrier mobility, andmoreover, they have great advantages for semiconductor applications compared to carbon
nanotubes because WS2 nanotubes exhibit only semiconducting characteristics regardless how
they are rolled [1]. Previously, we have investigated carrier transport properties of WS2
nanotube networks using a chemical vapor deposition (CVD)-grown commercial sample [2].
Although we tried to prepare thin WS2 nanotubes that attract much attention for their low
dimensionality by structure sorting [3], that sample was not suitable due to its small content ofthin nanotubes. To obtain thin WS2 nanotubes, in this study, we performed synthesis of WS2
nanotubes via sulfidation of solvothermally systhesized tungsten oxide (W18O49) nanowires [4].
W18O49 nanowires were synthesized via solvothermal reaction of WCl6 in ethanol, carriedout in a teflon-lined stainless-steel autoclave at 180 °C for 24 h. The obtained nanowires werereacted with sulfur at 840 °C for 2 h in N2 flow to allow formation of WS2 nanotubes. Fig. 1
shows the typical TEM image of the obtained WS2 nanotubes. We successfully obtained WS2
nanotubes with mean diameter of about 20 nm. This mean diameter is smaller than that of thesorted CVD-grown sample (33 nm) [2].
Carrier transport properties of the obtained WS2 nanotubes were evaluated by ionic-liquid
gating approaches. As shown in Fig. 2, the WS2 nanotube networks exhibited ambipolar carriertransport. This result indicates thin WS2 nanotubes obtained from solvothermally synthesized
W18O49 nanowires are useful for semiconductor applications.
[1] G. Seifert et al, Solid State Commun. 114, 245-248 (2000). [2] M. Sugahara et al, Appl. Phys. Express 9,075001 (2017). [3] Y. Yomogida et al, ACS Omega, accepted (2018). [4] Y. Chen et al, Mater. Res. Lett. 5,
508-515 (2017).

Fig. 1 TEM image of WS2 nanotubes synthesizedfrom solvothermally synthesized W18O49 nanowires

Fig. 2 Transistor characteristics of ionic-liquid gated
WS2 nanotube networks- 71 -

1P-32Gate-induced potassium intercalation to exfoliated MoS2 flakes.
○Ryotaro Okada1, Yohei Yomogida1, and Kazuhiro Yanagi1
1Department of Physic, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan

Molybdenum disulfide (MoS2) belongs to semiconducting transition metal dichalcogenides(TMDCs) and attracts interest because of its remarkable physical characteristics such as
superconducting transition. MoS2 is known to show superconducting transition by various
methods including chemical doping [1, 2] or ionic liquid gating [3, 4]. However, the resistancedoesn’t become zero. It is said that the residual resistance is caused by the inhomogeneous
distribution of the superconducting state within the channel [3]. We expect that theinhomogeneity is due to the presence of local states on the surface of the sample such as defects
because charge carriers can be accumulated only on the surface of materials in ionic liquid
gating. On the other hand, in various TMDCs except for MoS2, the technique of gate-induced
alkali metal intercalation can lead TMDCs to superconducting state with zero resistance [5]. In
this technique, we expect that the superconducting channel can be formed inside the layer.
Therefore, by applying this technique to MoS2, we investigate whether zero resistance appears
or not in the exfoliated MoS2 flakes.
We exfoliated a synthesized MoS2 crystals (2D Semiconductors) and transferred that flake
onto Si/SiO2 substrate. Then, Ti/Au electrodes were deposited with shadow mask and potassium
ion electrolyte was dropped.
Insulator-metal transition was observed from 3 V to 9 V of gate voltage (VG). At VG = 12 V,
the resistance decreased drastically in low
temperature region. We confirmed that this drop
was due to superconducting transition byobservingthedisappearanceof
superconductivity at critical magnetic field. But
as shown here, zero resistance was not observed.
The resistance didn’t become zero even at higher
VG, and superconducting phase-transition was
clearly suppressed by over-doping at VG = 16 V.
In
conclusion,gate-induced
potassiumintercalated MoS2 could show superconductivity
but could not show zero resistance. This result
suggests the existence of inhomogeneity insidelayer structure of the MoS2 flake.
[1] J. A. Woollam et al. Phys. Rev. B, 13, 3843 (1976).
[2] J. A. Woollam et al. Mat. Sci. Eng., 31, 289 (1977).
[3] K. Taniguchi et al. Appl. Phys. Lett., 101, 042603(2012).
[4] J. T. Ye et al. Science, 388, 1193 (2012).
[5] W. Shi et al. Sci. Rep., 5, 12534 (2015).
Corresponding Author: K. Yanagi
Tel: +81-42-677-2809
Web: http://www.comp.tmu.ac.jp/nano2/
E-mail: yanagi-kazuhiro@tmu.ac.jp

Fig. 1 Temperature dependence of the channel sheet
resistance at various gate voltages (VG).

- 72 -

1P-33
Photoluminescence weakening and overlayer deposition of WS2
induced by van der Waals interactionºHyun Goo Ji1, Adha Sukma Aji1, Kazunari Matsuda2, and Hiroki Ago1,3
1Interdisciplinary Graduate School Engineering Science, Kyushu University, Fukuoka 816-8580
2
Institute of Advanced Energy, Kyoto University, Kyoto 611-0011
3
Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580

Recently, transition metal dichalcogenides (TMDCs) haveattracted a great interest due to their unique electronic and opticalproperties. Chemical vapor deposition (CVD) has been regarded
as the most promising method to synthesize large-area TMDCs
with high reproducibility.1.2 Having similar hexagonal crystal
structure with many TMDCs, c-plane sapphire is commonly
utilized as a growth substrate in the CVD growth.3 However, few
studies have been reported on the influence of sapphire substrateon growth behavior and physical properties of TMDCs.4
Therefore, it is worthwhile to investigate in more detail.
In this work, we demonstrate that higher strain is induced in
the epitaxially grown WS2 grains via van der Waals interaction
with sapphire as compared with misaligned WS2 grains. Figure 1
Fig. 1. (a) Optical image and (b)shows the optical image of as-grown WS2 grains and their PL intensity mapping image ofphotoluminescence (PL) mapping image. It is clearly seen that the as-grown WS2 grains on
substrate. The crystal
epitaxial grain shows weaker PL intensity and a preferential sapphireaxes of sapphire are also shown.
multilayer growth. The van der Waals interaction on epitaxial
grain is attributed to induce a structural distortion and electronic disorder, resulting in multilayer
formation.5 Figure 2 shows PL spectra of (a) as-grown and (b) transferred WS2 grains measured
at different temperatures. In as-grown WS2, the epitaxial grain showed weaker and broader PL
which became almost comparable with misaligned grain after transfer. It reflects strong vander Waals interaction between as-grown epitaxial grain and sapphire substrate. Moreover, nosignificant difference was observed in the electrical transport properties of transferred WS2
grains (Figure 2c), indicating the strong coupling with sapphire does not cause severe crystal
defects in the epitaxially grown grains. We believe our work gives new understanding of theinfluence of sapphire on the growth behavior of TMDCs.6

Fig. 2 Normalized PL spectra of as-grown (a) and transferred (b) WS2 grains measured at different temperatures.
(c) Transfer curves of aligned and misaligned WS2 grains which were measured after the transfer on SiO2/Si
substrate for back-gate geometry (Vd = 1V). The insets show optical images of fabricated FET devices.
References: [1] S. J. Yun et al., ACS Nano, 2015, 9, 5510. [2] H. G. Ji et al., Chem. Mater., 2018, 30, 403. [3] D.
Dumcenco et al., ACS Nano, 2015, 9, 4611. [4] Y. Hoshi et al., Phy. Rev. Mater., 2018, 2, 064003. [5] H. J.
Conley et al., Nano Lett., 2013, 13, 3626. [6] H. G. Ji et al., submitted.
Correspondence: H. Ago (Tel&Fax: +81-92-583-8815, E-mail: h-ago@gic.kyushu-u.ac.jp)- 73 -

1P-34
Edge controllable growth of hexagonal boron nitride crystals byatmospheric pressure chemical vapor deposition○ Kamal P Sharma1,2, Aliza Khaniya Sharma1, Golap Kalita3, Masaki Tanemura3,
Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
2
Nanomaterials Research Center, Meijo University, Nagoya 468-8502, Japan3
Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya
466-8555, Japan
Hexagonal boron nitride (h-BN) shows a structural analog of graphene and is a wide bandgap 2D insulator consisting of alternating sp2–bonded boron and nitrogen atoms [1]. h-BN isalso realized as a promising substrate for pristine functionality of other 2D materials (graphene,
MoS2, WS2, etc.) and widely used in different electronic and optoelectronics applications [2].
Nowadays, chemical vapor deposition (CVD) technique is adopted to grow large area h-BN onvarious transition metals. However, due to complexity in growth mechanism, single domain
size has been limited to a few micro meters [3]. Herein, we tackled the controllable synthesisof h-BN larger than 25µm in edge length.
For h-BN crystals synthesis, a bare Cu foil was
loaded into the horizontal tubular furnace and heatedat 10.5oC/min from room temperature to 1050oC with
100 sccm Ar. After annealing the Cu foil for 30 min
with Ar:H2=100:17 sccm, h-BN source (Ammonia
borane (AB, H3BNH3)) was evaporated for 62min(largest crystals of 25µm) with Ar:H2=100:2 sccm.
Subsequently, the growth furnace was rapidly cooled
down to room temperature within 30min. As

Fig. 1. OM images of h-BN crystals with (a)stepwise heating, and (b), (c) constanttemperature heating of AB at 70oC and 75oC
respectively. (d) Schematics representation ofobserved crystal shapes.

synthesized h-BN crystals were analyzed by optical
microscopy (OM), SEM, XPS, AFM and TEM.
Fig. 1(a) shows the OM image of regular shaped(N-terminated) triangular h-BN crystals grown by stepwise decomposition of AB. However, on
constantly heating AB at 70 and 75oC, truncated [Fig. 1(b)] and Reuleaux [Fig. 1(c)] shaped
triangular h-BN crystals were synthesized, respectively. Thus, we achieved controllable
synthesis of h-BN crystals.
[1] K. K. Kim et al., Nano Lett. 12, 161 (2012).

[3] R. Y. Tay al., Nanoscale 8, 2434 (2016).

[2] F. Withers et al., Nat. Mater. 14, 301 (2015).
Corresponding Author: Takahiro Maruyama
E-mail: takamaru@meijo-u.ac.jp- 74 -

1P-35
Electronic structure of thin films of hydrocarbon molecules under anexternal electric field○Manaho Matsubara1 and Susumu Okada1
1

Graduate School of Pure & Applied Sciences, University of Tsukuba, Tsukuba 305-8571 Japan

Hydrocarbon molecules are representative materials for various functional devices,because of their tunable electronic properties by controlling the molecular shapes andconformations. Indeed, it has been demonstrated that condensed structures of hydrocarbons
can be utilized in photovoltaic, thermoelectric, and electronic devices, as for the promisingmaterials to endow the devices with remarkable flexibility. In such devices, carrier
accumulation in hydrocarbons by the electrode and counter molecules/atoms is essential for
their functionalities. However, microscopic insight into the distribution of accumulated carrierin condensed structures of hydrocarbons are not addressed to date, because of their complex
geometries of surfaces and interfaces with respect to the electrode or counter materials arisingfrom van der Waals spacing around the molecules. Thus, in this work, we aim to investigate
the influence of the molecular conformations of hydrocarbons on the carrier accumulation
under an external electric field, using the density functional theory combined with theeffective screening medium method. To simulate the carrier accumulation in hydrocarbon
complexes, we consider naphthalene thin films in the field-effect transistor structure where
the electrode is simulated by using the effective screening medium method. In the thin film,
naphthalene has flat, undulated, or staggered conformations with respect to the electrode.
Our calculations show that distribution of accumulated carrier depends on moleculararrangement to the electrode. Fig.1 shows the bird-eye-views of accumulated carriers in thenaphthalene films with various molecular arrangements with respect to the electrode. In thethin film with the flat molecular arrangement to the electrode, the carrier is uniformly injected
into the thin film. In contrast, as for the thin film in which the molecules possess undulated or
staggered arrangements to the electrode, the injected carriers exhibit inhomogeneous
distribution on the particular plane parallel to the electrode. These facts imply that themolecular arrangements of the hydrocarbon in their thin films seriously affect their transport
properties with FET structures.
(a)

(c)

(b)

Fig. 1: Bird-eye-views of accumulated carriers in
naphthalene thin films with (a) flat, (b) undulated,and (c) staggered molecular arrangements. In eachfigure, left and right panels correspond with the
charge distribution under 0.1e and 0.1h injection,
respectively.

Corresponding Author: M. Matsubara
Tel: +81-29-853-5921,
E-mail: mmatsubara@comas.frsc.tsukuba.ac.jp- 75 -

1P-36
Direct Exfoliation of Graphene and h-BN with Various Photosensitizers in Water
Aiming at Cancer Phototherapy
Ahmad Tayyebi, Naoko Ogino, Naoki Komatsu*
Graduate School of Human and Environmental Studies, Kyoto University, Kyoto 606-8501
Photodynamic therapy (PDT) and photothermal therapy (PTT) are noninvasive treatments
for cancer. Recently, our group reported on the direct and simple approach for water-dispersablegraphene-chlorine e6 (G-Ce6) composites [1]. The composite shows significant cytotoxicity
under light irradiation. In this paper, we extend this approach to various combination of 2D
nanosheets and photosensitizers, and investigate the stability of composites andphototherapeutic
efficacy
for cancer cells.
abTo
preparethecomposites,bulk
2D
material(graphiteor
hexagonal boron nitride (hBN)) and photosensitizer(protoporphyrin ix (Ppix) or
methylene blue (MB)) werebath-sonicated in 20 mL Figure 1: Images of Ppix, BN-Ppix and G-Ppix in water (a), and G-MB
water for 36 h. The resulting before and after centrifugation (b).
suspensions
were
centrifuged at 1026g. Ppix
with graphite and h-BN gave stable aqueous
dispersions (Figure 1a), implying the composite
formation of 2D nanosheet with Ppix (G-Ppix and
BN-Ppix, respectively) as in the case of G-Ce6.
However, MB cannot form stable dispersion,
because of no blackish dispersion after
centrifugation (Figure 1b).
To confirm the complexation, the absorption
spectra were measured as shown in Figure 2. It isshown that the Soret bands of Ppix are red-shifted inboth G-Ppix and BN-Ppix. Large upward baselineshift is observed in the case of G-Ppix due to the Figure 2: Absorption spectra of Ppix solution
absorption of graphene. On the other hand, BN-Ppix
and, G-Ppix and BN-Ppix dispersions in water.
exhibits large upward baseline shift only at the
shorter wavelength probably because of thescattering from the h-BN nanosheet.
We will continue to investigate the structure and aqueous stability of these composites andevaluate the phototherapeutic efficacy.
[1] G. Liu, H. Qin, T. Amano, T. Murakami, and N. Komatsu, ACS Appl. Mater. Interfaces, 7, 23402 (2015).
Corresponding Author: N. Komatsu
Tel, Fax: +81-75-753-6833

E-mail: komatsu.naoki.7w@kyoto-u.ac.jp- 76 -

2P-1
General Method for the Synthesis of Transition-metal Dichalcogenide
Nanoribbons Inside Carbon Nanotubes○Motoki Aizaki,1 Ellen Park,1 Zheng Liu,2 Kazu Suenaga,2 Yusuke Nakanishi, *1, 3 andHisanori Shinohara*1, 3
1

2

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan.
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
3
Institute for Advanced Research, Nagoya University, Nagoya 464-8602, Japan.

Transition-metal dichalcogenides (TMDs) have emerged as another important class of 2D
materials with unique physical properties, after the discovery of graphene. When reduced tonanoribbon geometries, the inherently different nature of TMDs is likely to provide more
complexities in comparison to their graphene counterparts. However, exploration of 1D
TMDs’ exotic electronic [1] and magnetic [2] properties has been hindered due to challenges
with synthesizing high-quality samples with precise width and thickness at the atomic level.
The inner hollow spaces of carbon nanotubes (CNTs) can serve as nano-reactors for thesynthesis of well-defined TMD nanoribbons [3]. Although there have been a few reports ofsyntheses of TMD nanoribbons inside CNTs, limited success has been achieved in fabricating
MoS2 and WS2 nanoribbons that are several tens of nanometers in length [4].
Here we report the CNT-templated synthesesa)of a series of TMD nanoribbons based on thevapor-phase reaction of a highly reactive metal
chloride and chalcogen. We have utilized thisbottom-up reaction to achieve the first synthesis
nanoribbons
with
a
of
NbSe2/WSe2
sub-nanometer width. Precise atomic-level
nanoribbon structures synthesized in experiments
were confirmed by high-resolution electronb)microscopy (HRTEM). In particular, MoS2
nanoribbons have a smooth zigzag edge (Fig 1)
and a length of over 100 nm. The present simple
reaction, in principle, can be applied to fabricate
various TMD nanoribbons, depending on the
1 nm
corresponding metal chlorides and chalcogen. Our
results will lead to the experimental studies of the Fig.1. (a) Schematic and (b) HRTEM images ofan individual MoS2 nanoribbon confined within aphysical properties of TMD nanoribbons.
single-walled CNT.

[1] Y. Cai et al., J. Am. Chem. Soc., 136, 6269 (2014)[2] Y. Li et al., J. Am. Chem. Soc., 130, 16739 (2008); P. Cui et al., Nano Lett., 17, 1097 (2017)[3] H. Shinohara, Jpn. J. Appl. Phys., 57, 020101 (2018)[4] Z. Wang et al., J. Am. Chem. Soc., 132, 13840 (2010); A. Botos et al., J. Am. Chem. Soc., 138, 8175 (2016)
Corresponding Author: Y. Nakanishi and H. Shinohara
Tel: +81-52-789-3660, Fax: +81-52-747-6442
Web: http://nano.chem.nagoya-u.ac.jp/
E-mail: nakanishi.yusuke@g.mbox.nagoya-u.ac.jp, noris@nagoya-u.jp- 77 -

2P-2Morphology-dependent Thermal Transport ofSingle-walled Carbon Nanotube Films○Takuya KITANO1, Tsuyoshi KAWAI1, Yoshiyuki NONOGUCHI1,2
Graduate School of Materials Science, Nara Institute of Science and Technology, NAIST, 8916-5
Takayama Ikoma Nara
2
JST PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
E-mail : kitano.takuya.kk1@ms.naist.jp : nonoguchi@ms.naist.jp
1[Introduction]
The thermal conductivity of single-walled carbon nanotubes (SWNTs) has been reported tospan from ~101 W m-1 K-1 for buckypapers to ~103 W m-1 K-1 for a single nanotube.1-3) Suchdiscrepancy could be considered to stem from interface thermal resistance between SWNTs,
where the control of nanotube bundle morphology is crucial for exploiting the tunability of
SWNTs’ thermal conductivity. Here we examine the thermal conductivity of films made fromwell-dispersed, and chemically-aggregated SWNTs.
[Method]
We used o-dichlorobenzene (o-DCB) as a good solvent to disperse SWNTs. Then o-xylene,
a poor solvent, was added to the uniform dispersion in order to intentionally aggregate SWNTs.
Finally, we fabricated 30 um-thick SWNT films by filtering the dispersion onto 0.2um-pore
membranes[Result and discussion]
We successfully fabricated the films made from the SWNTs of averaged bundle diameters
ranging from 13±0.8 nm to 65±5 nm (Fig. 1 (a)). In this range, SWNT films showed tunable
thermal conductivity (Fig. 1 (b)). Aggregated SWNT films showed the apparently monocomponent time profile of heat detection in the Xenon flash method, where the thermal
diffusivity of less than 50 mm2 sec-1 was estimated. Similar film diffusivity has been reported
in the many literatures. On the other hand, films composed of the most exfoliated SWNTs
exhibited the fastest, and subsequent components thereafter. The fastest one yields the thermal
diffusivity exceeding 2000 mm2 sec-1. Importantly, we found that the contribution of several
components relies on the SWNT bundle diameters, that is, morphological dispersibility.

(a)

(b)

Fig 1. (a) Scanning electron microscope photographs (b) Xenon flash profiles (Red : o-DCB 67%, Yellow : oDCB 50%, Green : o-DCB 33%, o-DCB 10%)
1) Ya Feng. et al. Appl. Phys. Lett. 112, 191904 (2018)2) J. Hone. et al. APL 77, 666 (2000).
3) Philippe Gonnet. et al. Curr. Appl. Phys. 6, 119 (2006).

- 78 -

2P-3
Tuning the electronic properties of single-walled carbon nanotubes
by defluorination-assisted nitrogen doping and defect formationfor efficient oxygen reduction electrocatalysis○Koji Yokoyama1, Yoshinori Sato2, Masashi Yamamoto2, Tetsuo Nishida2,
Kenichi Motomiya1, Kazuyuki Tohji1, Yoshinori Sato1,3
1

Graduate School of Environmental Studies, Tohoku University, Sendai 980-8579, Japan
Stella Chemifa Corporation, Osaka 595-0075, Japan
3
Institute for Biomedical Sciences, Interdisciplinary Cluster for Cutting Edge Research, Shinshu
University, Matsumoto 390-8621, Japan
2

Recently, nitrogen-doped and non-doped defective carbon nanotubes (CNTs) have beenreported to be metal-free, durable, and highly efficient oxygen reduction reaction (ORR)
electrocatalysts as alternatives to platinum [1,2]. However, the roles of nitrogen species anddefects in CNTs for the ORR catalytic activity are still under debate. Theoretical reports suggestthat nitrogen species and defects in CNTs alter their electronic properties and hence facilitate
the ORR [3,4]. Meanwhile, the experimental relationship between the electronic property and
ORR catalytic activity has not been fully investigated. Here, we synthesized nitrogen-doped
and non-doped defective single-walled CNTs (SWCNTs) by defluorination-assisted nitrogen
doping [5] and defect formation. Moreover, we evaluated their ORR catalytic activities [6], andcorrelated them with their electronic properties including work function (WF) and conductivity.
Highly crystalline SWCNTs synthesized by the arc-discharge method were fluorinated at
250 °C using 20% F2/N2 gas for 4 h. N-SWCNTs were prepared by annealing the fluorinated
SWCNTs at 500 °C for 30 min in a gas flow of 1% NH3/N2. The N-SWCNTs were further
annealed at 1000 °C for 3 h in a N2 flow to synthesize AN-SWCNTs. To prepare non-doped
defective SWCNTs (AF-SWCNTs), the fluorinated SWCNTs were annealed at 1000 °C for
3 h in a N2 flow. The ORR catalytic activities of the prepared samples were evaluated byelectrochemical measurements using RDE in 0.5 M H2SO4. The WF and conductivity were
measured by ultraviolet photoelectron spectroscopy and four-probe method, respectively.
Judged from the onset potential (Eonset) and number of electrons transferred per oxygen
molecule (n) involved in the ORR, the AN-SWCNTs exhibited the highest ORR catalytic
activity (Fig. 1). The AN-SWCNTs contained 0.8 at% nitrogen consisting of enriched graphitictype species. The WF of the AN-SWCNTs was lower than those of the hc-, N-, and AFSWCNTs, while the conductivity of the AN-SWCNTs
was higher than those of the N- and AF-SWCNTs.
These results suggest that low WF and highconductivity observed in the AN-SWCNTs cancontribute to excellent ORR catalytic activity.
[1] K. Gong et al., Science 323, 760 (2009).
[2] K. Waki et al., Energy Environ. Sci. 7, 1950 (2014).
[3] S. Ni et al., Nanoscale 4, 1184 (2012).
[4] S. Jiang et al., Nanoscale 6, 14262 (2014).
[5] K. Yokoyama et al., Carbon 94, 1052 (2015).
[6] K. Yokoyama et al., J. Mater. Chem. A 4, 9184 (2016).
Corresponding Author: Y. Sato
Tel & Fax: +81-22-795-3215,
E-mail: yoshinori.sato.b5@tohoku.ac.jp

Fig. 1 Eonset and n @ -0.1 V (vs. Ag/AgCl)
involved in ORR for the highly crystalline,
N-, AN-, and AF-SWCNTs, and Pt-C.

- 79 -

2P-4
Local strain control for realization of low-voltage operable,highly-stretchable carbon nanotube thin-film transistors○Yuya Nishio1, Jun Hirotani1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

2

Stretchable devices can closely contact with stretchable free-form surface, and they are
expected for wearable devices to realize continuous monitoring of human activities and healthconditions. Many approaches such as deformable serpentine bridge designs [1] and stretchable
devices using random network of out-of-plane wrinkles [2] have been reported. However, they
showed low-stretchability and constraints in terms of circuit design. Although stretchable
carbon nanotube thin-film transistors (CNT TFTs) have also been reported, they showeddegradation of electrical performance with applied strain. [3] Recently, intrinsically stretchable
transistors were reported, however, they needed to be operated at high gate voltage because low
dielectric constant polymer is used as a gate dielectric layer. [4] In this work, we have realized
the CNT TFTs which provides low-voltage operation and high stretchability simultaneously byintroducing the local strain control layer.
We fabricated CNT TFTs with a channel of a semiconducting-CNT thin film, transparent
electrodes of a CNT thin film, and a 50 nm-thick Al2O3 gate dielectric layer on a stretchablepoly(dimethylsiloxane) (PDMS) film. In order to suppress
the influence of applied strain, local strain control layercomposed of a rigid polymer was introduced on top of thechannel region of the CNT TFTs.
The fabricated CNT TFTs exhibited typical p-typetransistor characteristics with a carrier mobility of 6.8
cm2/Vs and on/off ratio of about 105, and was operable atgate voltage of less than 2 V. They also showed the robustelectrical performances against applied strain as shown in Fig. 1 ON and OFF currents as a
Figure 1. Figure 2 shows the measured strain induced in the function of externally applied tensile
channel region during stretching cycle perpendicular to the strain.
channel direction. By introducing strain control layer, only
1.5 % of externally applied tensile strain was induced in thechannel region, clearly showing the effectiveness of thestrain control technique.
Channel strain (%)

25[1] D.-H. Kim et al., Proc. Natl. Acad. Sci., 105, 18675 (2008).
[2] M. Kaltenbrunner et al., Nature 499, 458 (2013).
[3] D.-M. Sun et al., Nat. Commun. 4, 2302 (2013).
[4] S. Wang et al., Nature 555, 83 (2018).
Corresponding Author: Y. Ohno
Phone & Fax: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 80 -

w/o Strain control layer
w/ Strain control layer

20
15
10
5
0

0

5

10

15

20

25

30

35

External strain (%)

Fig. 2 Measured strain induced in thechannel region as a function of
externally applied tensile strain.

2P-5
Ratchet-free solid-state inertial rotation of a guest ball in a tight tubular host
○Taisuke Matsuno1, Yusuke Nakai2, Sota Sato1, Yutaka Maniwa2, Hiroyuki Isobe1
1

Department of Chemistry, The University of Tokyo and JST ERATO, Bunkyo-ku, Tokyo 113-0033, Japan2
Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 980-8578, Japan

Solid-state dynamics of [60]fullerene (C60) is controlled
by intimate intermolecular face-to-face contacts and results
in restricted motions at low temperatures [1]. Manipulationof the solid-state dynamics of fullerene molecules is thus aninteresting yet challenging problem.
We have previously synthesized a finite (12,8)-helicalcarbon nanotube molecule called [4]CC, that binds C60 toform a peapod-like host-guest complex ([4]CCÉC60, Fig. 1
and 2a) [2]. Here we report that this tubular host liberates thesolid-state dynamics of C60 from the motional restrictions. Fig. 1. Chemical structure of the
Variable-temperature crystallographic analyses indicated that host-guest complex [4]CCÉC60.
the electron density of C60 more evenly distributed at higher temperature, indicating theliberated degree of freedom (Fig. 2b). The solid-state dynamics has been quantitatively
unveiled by solid-state 13C NMR (Fig 2c). The line-shape and relaxation time analyses
revealed a small energy barrier of +2 kcal mol–1 for the reorientation. This value is
unexpectedly small, because the association between the tube and C60 is a large energy gain of–14 kcal mol–1. The solid-state rotational motions reached a non-Brownian, inertial regime
with an extremely rapid rotational frequency of 213 GHz at 335 K [3].

Fig 2. Structures and dynamics of [4]CCÉC60. (a) Side view of the crystal structure at 295 K. (b)Temperature-dependent electron density mappings with 2Fo–Fc (RMSD: 1.5s). (c) Solid-state 13C NMR spectraof C60 in [4]CC indicating rapid free rotation.
[1] Johnson, R. D.; Yannoni, C. S.; Dorn, H. C.; Salem, J. R.; Bethune, D. S. Science 1992, 255, 1235-1238.
[2] Isobe, H.; Hitosugi, S.; Yamasaki, T.; Iizuka, R. Chem. Sci. 2013, 4, 1293-1297.
[3] Matsuno, T.; Nakai, Y.; Sato, S.; Maniwa, Y.; Isobe, H. Nat Commun. 2018, 9, 1907.
Corresponding Author: H. Isobe
Tel: +81-(0)3-5481-4777, Fax: +81-(0)3-5841-4162
Web: http://www.chem.s.u-tokyo.ac.jp/users/physorg/
E-mail: isobe@chem.s.u-tokyo.ac.jp- 81 -

2P-6
Repeated synthesis of vertically-aligned CNTs via reduction-CVD-oxidation
treatment of Co-Al-O catalyst layer○Toshihiro Sato1, Hisashi Sugime2, Richard M. Laine3, Suguru Noda1, 4
1

Department of Applied Chemistry, School of Advanced Science and Engineering, Waseda University,
3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
2
Waseda Institute for Advanced Study, Waseda University, 1-6-1 Nishi waseda, Shinjuku-ku, Tokyo
169-8050, Japan3
Department of Materials Science and Engineering and the Macromolecular Science and Engineering
Center, University of Michigan
4
Waseda Research Institute for Science and Engineering, Waseda University, Tokyo 169-8555, Japan.

It is well known that the catalyst nanoparticles (NPs) get coarsened through Ostwald
ripening [1] during chemical vapor deposition (CVD), resulting in growth termination ofvertically-aligned carbon nanotubes (VA-CNTs). We here propose and develop an approachfor repeated CNT synthesis via oxidation and dissolution of the coarsened Co NPs to the
Al2O3 underlayer and reduction and segregation of Co NPs from the CoAl2O4 layer (Fig. 1).
We prepared the Co/Al2O3 catalyst layer on a SiO2/Si substrate with a wide thickness
range (0.20–20 nm) using the combinatorial masked deposition method (0.20–20 nm) [2]. The
substrate was annealed at 900 C in O2/N2 to form CoAl2O4 layer, and then was reduced at
800 C in H2/CO2/Ar to form Co NPs. CNTs were grown by CVD by flowing
C2H2/CO2/H2/Ar at 800 C, and were detached from the substrate using a scotch tape. The
substrate was then annealed under O2/N2 at 800 C to dissolve the coarsened Co NPs in the
Al2O3 layer. We repeated the reduction-CVD-oxidation treatment for three cycles, andconfirmed similar CNT growth keeping ~200 m height for ~20 nm thick Co layer (Fig.2).

Fig. 1 Schematics of the method resetting Co
NPs with reduction-oxidation treatment

Fig.2 Repeated VA-CNT synthesis on
sputtered CoO and Al2Ox[1] K. Hasegawa, S Noda, Carbon 49, 4497 (2011).
[2] S. Noda et al., Carbon 44, 1414 (2006).
Corresponding Author: S. Noda, Tel: 03-5286-2769, E-mail: noda@waseda.jp- 82 -

2P-7
Performance improvement of transparent solar cell using few-layeredtransition metal dichalcogenide by Schottky barrier control○Y. Yamaguchi1, W. Okita1, C. Li1, T. Kaneko1, and T. Kato1,2
1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Layered transition metal dichalcogenide (TMD) is one of the most attractive materials for
future transparent and flexible optoelectrical devices due to their atomically thin structure,band gap in visible light range, and high optical transparency. Although the solar cell of TMD
has been widely investigated by many groups, those are based on the pn junction type solarcell. Since complicated structures are required to form pn junction structures in TMD such as
dual gate electrodes or position selective doping, the device size of pn junction solar cell with
TMD is limited within very small region (few μm). In spite of the outstanding advantages of
TMD, those merits of TMD have not been applied for transparent and flexible solar cell,which is attracted intense attention as a next-generation energy harvesting technology.
Recently, we have developed a new fabrication process of TMD-based solar cell [1]. In our
process, Schottky type device configuration is utilized, which can be simply formed byasymmetrically contacting electrodes and TMD. The power conversion efficiency (PCE)
clearly depended on the work function difference between two electrodes (ΔWF). A higher
efficiency could be obtained with higher ΔWF (Pd-Ni), which isconsistent with our concept. Based on the optimizations ofelectrodes and distance, the PCE can be reached up to 0.7 %,which is the highest value for solar cell with similar TMD
thickness [1].
In our previous study, we used conventional metals such as Ni
and Pd to tune the Schottky barrier height between electrode and
TMD. To improve the transparency of whole device, however, it
is required to use transparent electrodes. In this study, we use
indium tin oxide (ITO) as an electrode and form transparent and Fig. 1. WF variation of ITO after 
flexible solar cell. Since controlling ΔWF is a key to improve the different plasma treatments.
PCE in our device, the surface of ITO was functionalized byvarious plasma treatments with hydrogen, nitrogen and oxygen
as reactive species. It is found that the work function of ITO canbe controlled by changing plasma species and treatment time
(Fig. 1). After controlling the ΔWF of ITO electrodes withplasma treatments, clear power generation can be observed. It isalso found that the PCE increases with ΔWF controlled by N2
plasma treatment (Fig. 2). Since our simple fabrication processincludes high potential for large scale fabrication, thisachievement is very important for realizing the industrial
Fig. 2. PCE as a function of ΔWF
application of TMD as a transparent and flexible solar cell.
[1] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato: Sci.
Reports 7 (2017) 11967.

between ITO electrode pairs.

Corresponding Author: Y. Yamaguchi
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: yoshiki.yamaguchi.t5@dc.tohoku.ac.jp- 83 -

2P-8
Universality in Transition Metal Dichalcogenide Light-Emitting Devices○Hirofumi Matsuoka1, Juliette Tempia 1, Tomoyuki Yamada 1, Tomohiro Ogura 1,
Lain-Jong Li 2, Tomo Sakanoue 1, Jiang Pu 1, and Taishi Takenobu 1
1

2

Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Physical Science and Engineering, KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia

Transition Metal Dichalcogenide (TMDC) monolayers have attracted much interest as
active materials for light-emitting devices due to their atomically thin thickness, direct
bandgap, and spin-valley coupled electronic structure [1-3]. However, most relevant TMDC
light-emitting devices are made using tiny samples and it is highly required to fabricate
devices using large-area TMDC monolayers for practical applications. Recently, we proposeda novel device structure, in which two electrodes were deposited on a TMDC film and coverthem with an electrolyte. We successfully achieved light emission from large-area WSe2 andMoS2 polycrystalline films [4]. Although we observed clear electroluminescence (EL) imagesof these devices (Figs. (a), (b) and (c)), the position of the recombination zone was strongly
sample dependent and the detailed operational mechanism is still an open questions. Here, tounderstand the behind mechanism of these light-emitting devices, we fabricate several devices
using various TMDC monolayers and try to find the universality among them.
We fabricated electrolyte-based transistors of centimeter-scale polycrystalline WSe2, MoSe2,
and WS2 monolayers using ion gels, a mixture of an ionic liquid and a triblock co-polymer.
Firstly, we operated these devices as light-emitting devices using two electrodes on TMDC
films. As shown in Figs. (a), (b), and (c), just by applying voltages, we observed the clear EL
images between the two electrodes through a microscope and a CCD camera, suggesting theformation of p-i-n junction due to electric double layer carrier doping. Based on thesehigh-resolution images, we determined the exact position of recombination zone and derived
the length ratio between the p-doped regime and the n-doped regime. Next, we also measured
both hole and electron carrier mobilities in the same devices using transistor configurations.
Finally, to search for the hidden universality in TMDC light-emitting devices, we carefullycompared the relationship between the p/n length ratio of EL images and mobility ratio oftransistor measurements. As a result, we found the obvious universality between these twoparameters, which is an important milestone to understand the behind mechanism of theselight-emitting devices.

Figs. EL images of (a) WSe2, (b) MoSe2, and (c) WS2. White dotted lines show the edge of electrodes.
[1] F. Xia et al., Nat. Photonics 8, 899 (2014)[2] Y. J. Zhang et al. Science 344, 725 (2014)[3] J. Pu, T. Takenobu Adv. Mater. 30, 1707627 (2018)[4] J. Pu et al. Adv. Mater. 29, 1606918 (2017).
Corresponding Author: T. Takenobu.
Tel: +81-52-789-5173
E-mail: takenobu@nagoya-u.jp- 84 -

2P-9
Ab Initio Calculations of the Influence of Surface Water on Graphene○Yusei Kioka1, Yuki Maekawa 2, Kenji Sasaoka 3, Takahiro Yamamoto 1,2,3
Department of Electrical Engineering, Tokyo University of Science, Tokyo, 125-8585, Japan2
Department of Liberal Arts, Tokyo University of Science, Tokyo, 125-8585, Japan
3
Water Frontier Science & Technology Research Center, RIST, Tokyo University of Science,
Tokyo, 125-8585

1

It had long been believed that water molecules cannot adsorb on graphene because it is ahydrophobic material. However, the previous theoretical studies based on classical molecular
dynamics (MD) simulations showed that single or double water layers are formed on agraphene surface, depending on number of water molecules [1,2]. Before the results obtained
from these simulations, Homma et al. discovered the existence of the similar water molecularlayers around a carbon nanotube by both photoluminescence measurements and classical MD
simulations [3]. While the layer structure perpendicular to a graphene surface has beensystematically and rigorously researched, the microscopic structure parallel to the surface has
not yet been fully clarified, so that this means that the hydrogen bonding network in the waterlayers on graphene is not understood enough. Moreover, the influence of surface water on theelectronic states of a graphene remains to be elucidated yet.
In this work, we constructed the microscopic structure of surface water on a free-standing
graphene and a graphene on hexagonal boron nitride substrate using classical MD simulations.
For the obtained structures, we investigated the influence of surface water on the electronic
states of a graphene using ab initio calculations based on the density functional theory. Our
MD simulations reproduced that the surface water exhibits single or double layered structureson graphene depending on the water vapor pressure in the spite of presence or absence of thesubstrate. In addition, we clarified the two-dimensional hydrogen-bond network is formed on
the water layers on graphene surface [4]. We explain that the structure of surface water andthe electronic states of water adsorbed graphene at poster session.
[1] T. A. Ho and A. Striolo, J. Chem. Phys. 138, 054117 (2013).
[2] A. Akaishi, T. Yonemaru, and J. Nakamura, ACS Omega 2, 2184 (2017).
[3] Y. Homma, et al., Phys. Rev. Lett. 110, 157402 (2013).
[4] Y. Maekawa, K. Sasaoka and T. Yamamoto, Jpn. J. Appl. Phys. 57, 035102 (2018).
Corresponding Author: Takahiro Yamamoto,Tel&FAX: +81-3-5213-0990,
E-mail: takahiro@rs.tus.ac.jp- 85 -

2P-10
Theoretical Analysis on Thermoelectric Effects of Bilayer Graphene
in Vertical Electric Field○Hikaru Horii1, Kenji Sasaoka2, Takahiro Yamamoto1,2, Hidetoshi Fukuyama3
1

Faculty of Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
2
RIST, Tokyo University of Science, Chiba 278-8510, Japan
3
Tokyo University of Science, Tokyo 162-8601, Japan

Thermoelectric generation is a potential key technology for recovering energy from waste
heat. To obtain high thermoelectric (TE) performance, it is required that both the electricalconductivity and the Seebeck coefficient are high. Enhancement of TE performance is an
important issue for material science and engineering, but it is not easy to develop the highperformance TE materials due to the trade-off relation between the conductivity and theSeebeck coefficient. For this reason, various materials has been investigated and improved byband engineering. Recently, carbon nanotube has especially attracted attention as a potential
material for exhibiting high TE performance and flexibility [1].
In this study, we focused on the bilayer graphene,
whose band-edge structure can be modulated by thevertical electric field as shown in Fig. 1 [2]. To
validate TE performance of the bilayer graphene, wehave investigated TE response using thermal
Green’s function methods and Kubo formula [1] to
calculate TE properties in bandgap and band-edges
exactly.
As a result, we found that Seebeck coefficientand TE power near the band-edges became large
Fig. 1 Bilayer Graphene in Vertical Electric Field
due to the peak of the density of states and that thechemical potential with maximum TE power can be controlled by adjusting the electric field tomodulate the band-edges. Therefore, we can improve the TE performance of bilayer graphene
by applying the proper electric field.
Although this method is not suitable for energy hearvesting because of using an external
electric source for the band engineering, this problem can be solved by the method of electricfield effect using spontaneous polarization of ferroelectrics, which we presented in FNTG53
and FNTG54. We have already known that bandgap of bilayer graphene opens when it istouched with ferroelectrics. Thus, the bilayer graphene can be a powerful and flexible TE
material by using with ferroelectrics controlled spontaneous polarization of ferroelectrics.
[1] T. Yamamoto and H. Fukuyama, J. Phys. Soc. Jpn. 82, 024707 (2018).
[2] T. Ohta et al. , Science 313, 951 (2006).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1492
E-mail: takahiro@rs.tus.ac.jp- 86 -

2P-11Novel 2D Heterostructures of Monolayer WS2 and 2D Perovskite○Ufuk Erkılıç1, Hyun Goo Ji1, Kazunari Matsuda2, Hiroki Ago1,3,*
1Interdisciplinary Graduate School of Engineering Sciences, Kyushu University,
Fukuoka 816-8580, Japan
2
Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan3
Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan

Recently, organic-inorganic hybrid perovskites have attracted great attention thanks to their
exceptional properties, such as long carrier diffusion lengths, high optical absorption, strong
luminescence, and bandgap tunability through chemical composition [1]. Thus, integration of
the perovskites with 2D materials offers a new opportunity to obtain unique properties.
However, because of their vulnerability to common solvents, conventional wet transfer
processes are not applicable to perovskites to create new heterostructures [2]. In this study, wedemonstrate preferential vapor deposition of lead iodide (PbI2) onto monolayer WS2 andsuccessive vapor-phase conversion to perovskite (methyl ammonium lead iodide(MAPbI3))/WS2 heterostructure. Preferential growth of PbI2 via vapor deposition allowed us
to obtain large area and uniform perovskite/WS2 heterostructures.
We synthesized monolayer WS2 by CVD on c-plane sapphire and vapor-deposited PbI2
onto WS2. Afterwards, PbI2 was converted to perovskite (MAPbI3) by vapor phaseintercalation of methyl ammonium. Figure 1a shows a schematic illustration of
perovskite/WS2 heterostructure. The optical image of perovskite with different thicknesses on
WS2 is given in Figure 1b. Photoluminescence (PL) spectra have been taken from pristine
MAPbI3, pristine WS2, and the heterostructure (Fig. 1c). The thick pristine MAPbI3 showed
an intense PL peak at ~1.65 eV, while WS2 showed a moderate PL peak at ~2.0 eV. In the caseof the heterostructure, PL peaks from both MAPbI3 and WS2 were significantly quenched. It
is known that MAPbI3/WS2 interface exhibits type-II band alignment which is desirable forphotonic devices, such as solar cells, photodetectors, and light emitting diodes [3].
Considering the type-II band alignment, PL quenching can be attributed to charge transfer orinterlayer exciton formation at the interface. Details of the experimental conditions andtemperature dependent PL studies will be discussed in the symposium.

Fig. 1: a) Schematic illustration of perovskite/WS2 heterostructure. b) Optical image of a thin (left) and thick(right) layer of perovskite grown on WS2. c) PL spectra of WS2, MAPbI3, and MAPbI3/WS2 heterostructure.
[1] B. R. Sutherland et al. Nature Photon., 10, 295 (2016). [2] H.-C. Cheng et al. Nano Lett., 16, 367 (2016).
[3] C. Ma et al., Adv. Mater., 28, 3683 (2016).
Corresponding Author: Hiroki Ago
Tel and Fax: +81-92-583-8852
E-mail: h-ago@gic.kyushu-u.ac.jp- 87 -

2P-12
Variation of excited-state dynamics
in trifluoromethyl functionalized C60 fullerenes○Jaehong Park1
1

Department of Molecular Engineering, Graduate School of Engineering, Kyoto University,
Kyoto, 615-8510, JapanAs the C60 fullerene and its derivatives have shown their competence as electron acceptors
in solar energy conversion applications, many fullerene derivatives have been introduced tomodulate the physical, chemical, electrochemical, and optoelectrical properties of thefullerene family.[1,2] Various trifluoromethyl (CF3) group-substituted fullerenes (TMFs) havebeen synthesized and their structures have been characterized.[2] In general, these CF3%/&
substitutions on fullerenes have shown a one-electron reduction potential (𝐸𝐸"/$ ) shift toward%/&

a more positive energy with respect to 𝐸𝐸"/$ (C60), due to their electron-withdrawing CF3
groups.[3] Despite the various molecular engineering strategies, how CF3 groups perturb the
intrinsic excited-state dynamics of fullerenes, which can play an important role on
photoinduced charge-generation and recombination, remain elusive.
Here, we report on electronically excited-state
dynamics of three different TMFs (C60(CF3)n:C60/4-1, C60/6-2, and C60/10-1, featuring four,six, and ten trifluoromethyl groups, respectively;
Fig. 1) using optical spectroscopy as well as
ultrafast
pump/probetransientabsorption
spectroscopy.[4] C60/4-1 and C60/6-2 dissolved
in toluene solvent show near-unit S1→T1
intersystem crossing quantum yield (FISC), ca. 1 Fig. 1 Schlegel diagrams, X-ray structures
ns S1-state lifetimes, and microsecond-timescale of C60/4-1, C60/6-2, and C60/10-1.
T1-state lifetimes, which are typical of the fullerene class. On the other hand, C60/10-1
exhibits a dominant sub- nanosecond nonradiative S1→S0 relaxation mechanism andnegligible FISC, therefore decreasing the average excited-state lifetime (tavg) by about 5 ordersof magnitude compared to that of C60/4-1 and C60/6-2 (tavg≈17 µs and 54 µs for C60/4-1
and C60/6-2, respectively, whereas (tavg≈100 ps for C60/10-1). These excited-statecharacteristics of C60/4-1 and C60/6-2 are preserved in polymer matrix, suggesting thatfullerene/polymer
interactions
donotmodulate
intrinsic
photophysics
oftrifluoromethyl-substituted fullerenes. The contrasting excited-state study results of C60/4-1
and C60/6-2 to that of C60/10-1 infer that intrinsic optical properties and excited-state
dynamics can be affected by the substitution on the fullerene.
[1] G. Yu, et al. Science, 270, 1789 (1995); Y. Matsuo et al. Adv. Funct. Mater., 19, 2224 (2009).
[2] O. V. Boltalina et al. Chem. Rev., 115, 1051 (2015).
[3] A. A. Popov et al. J. Am. Chem. Soc., 129, 11551 (2007).
[4] J. Park et al. PCCP, 18, 22937 (2016).
Corresponding Author: J. Park
Tel: +81-075-383-2549, Fax: +81-075-383-2556,
Web: https://park-group.wixsite.com/park-group
E-mail: j.park@moleng.kyoto-u.ac.jp- 88 -

2P-13
Optical Properties of Carbon Nanotube Forest metamaterials○Hiroshi Furuta1, Adam Pander1,
Keisuke Takano2, Akimitsu Hatta1, Makoto Nakajima3
1

Department of Systems Engineering, Kochi Univ. Technol., Kochi, 7820003, Japan,
Shinshu University, Nagano, 3908621, Japan, 3Osaka University, Osaka, 5650871, Japan2

CNT forest of high emissivity, nearly ideal “black-body absorber[1]”, would be a strong
candidate material for the future application in high-sensitive sensor, thermal energy storage
device[2], and so on. Recently, metamaterials, electro-magnetic circuit to the incident
EM-wave, opened a method to design desired optical properties. We recently reported CNT
forest metamaterial in infrared and visible region in order to increase optical and thermal
absorbance utilizing FIB nanofabrication [3, 4].
In this presentation, optical properties ofmetamaterials composed by 1D anisotropic material of
CNTs, and their patterning of resonator shapes are
discussed. Figure 1[6] shows calculated UV-Vis-IR
spectra of vertical- and parallel-aligned metal-nanorod
CNT forests to the Electric field (Ez) of incident EM
wave propagating in the x direction, showing goodcorrespondence to the experimental results[5] in Fig.
2(a-d). Components of perpendicularly aligned CNTs,
which were parallel to the Ez of EM wave, increased
reflectance in longer wave length region. Alignment Fig. 1 (a-c) Calculated Transmittance,of CNTs had an important role to improve absorption reflectance and absorbance spectra by
meep
FDTD
programfortheon the metamaterial patterns. Patterning shape effect ideal-metal-nanorod CNT forests. Ez ofof CNT forest metamaterials[3-5] will be also EM wave was perpendicular to (a) x-axis
discussed in detail.
and (b) y-axis of CNT alignment, and (c)This work was supported by JSPS KAKENHI parallel to z-axis of CNT alignment. [6]Grant Number JP 17K06205 and JP 24560050.
[1] K. Mizuno et al., PNAS 106(15), 6044-6047 (2008)[2] H. Furuta, JSPS KAKENHI Grant Number JP 17K06205.
[3] A. Pander et al., Nano-Micro Lett. 9:44 (2017).
[4] H. Miyaji et al., Dia. Rel. Mat. 83, 196-203 (2018)[5] A. Pander, et al., Vacuum 154, 285-295(2018).
[6] H. Furuta et al., WONTON2018 (Hakone, 2018).
Corresponding Author: H. Furuta
Tel: +81-887-57-2211
Web: http://gecko.eng.kochi-tech.ac.jp
E-mail: furuta.hiroshi@kochi-tech.ac.jp

Fig. 2 (a, b) Highly vertically aligned CNT
forests exhibiting low reflectance in
10-degree specular reflectance [5]. (c, d)
Low-degree aligned, wavy CNT forests
showing higher reflectance in longer
wavelength [5].

- 89 -

2P-14
Analysis on carbon nanotube dispersibility by using differential centrifugal
sedimentation○Taiyo Shimizu, Takeo Yamada, Ken Kokubo, Kenji Hata
CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba 305-8565, Japan

Dispersibility of carbon nanotube (CNT) is a critical issue for achieving advanced
nanocomposite materials making the efficient use of CNTs’ superior properties. Poor
dispersion of CNTs results in poor enhancement, or even deterioration of the properties suchas mechanical strength. In the case of solution-mixing fabrication, mechanical debundlingof CNT in a dispersing media is generally adopted, and good dispersion of CNT before
mixing with the matrix of composite should be achieved in order to prepare well-dispersed
CNT nanocomposites.
In this study, we propose a new method for providing a clue to determine the “degree ofdebundling” for various CNTs in a dispersing solvent. Differential centrifugal sedimentation(DCS) analysis provides a particle size (Stokes diameter) distribution calculated fromdetected settling velocity of the particles in a suspension/dispersion under centrifugal force(Fig. 1a). Although this method has recently turned out to be more useful than otheranalytical techniques, such as dynamic light scattering, to estimate the size and dispersibilityof CNTs with dispersant (e.g. surfactant), we found that DCS analysis can also be applied tosuspensions of CNT agglomerates without any dispersant.
Stable suspensions of several CNTs wereprepared by using a high-pressure homogenizer [1] .
Agglomerate size distributions of CNT suspensions
obtained from DCS analysis are shown in Fig 1b, andeach CNT was classified into three groups, A to C,
according to its peak position.
Concerning
morphology in a nanometer scale, while CNT groupA, for instance, displayed straight bundles with thickand relatively homogeneous width, curved anddebundled structures were observed in CNT group C(Fig. 2). Each CNT group displayed different
morphology, and CNTs in the same group showed thesimilar degrees of debundling. Although elucidationof detailed mechanism is still being addressed, size Fig. 1 (a) Schematic of DCS analysis anddistributions of agglomerates from DCS are related (b) size distributions of CNT agglomerates.
to the degree of debundling. The DCS analysis canthus provide useful information on the morphologyof the agglomerates in CNT suspensions, from which
we can easily estimate the degree of debundling forindividual CNT suspensions.
[1] K. Kobashi et al. Chem. Sci., 4, 727 (2013)
Corresponding Author: T. Shimizu
Tel: +81-29-861-5712
Web: http://www.nanocarbon.jp
E-mail: shimizu-t@aist.go.jp- 90 -

Fig. 2 Scanning electron microscopy
images of typical CNT agglomerates.

2P-15
Diameter variation effects on electrical transport
in semiconducting carbon nanotube thin film
○Masaaki Tsukuda1 and Takahiro Yamamoto1
1

Department of Electrical Engineering, Tokyo University of Science,Niijuku 6-3-1, Katsushika-ku, Tokyo 125-8585, Japan

Width (μm)

Although carbon nanotube (CNT) thin films are expected as flexible and transparent
transistors, the physical origin of their high electric performance remains to be clarified yet
because individual variations in nanotube length and diameter are involved in nanotube network.
In addition, its electrical conductivity also depends on geometrical network structure such as
nanotube density and alignment. Therefore, understanding various properties of CNT thin film
has been the subject of controversy over the last few years.
In order to understand relation between the network structure with the nanotube densities,alignment, length and diameter, and their electrical transport property, we have done
computational study on electrical transport in CNT thin films, using a numerical stickpercolation-based model. Especially, we have thoroughly explored how nanotube diametervariation affects electrical transport properties of CNT thin films.
In the present study, we conducted anelectrical transport simulation for CNT
Length (μm)
network consisted of semiconducting CNTs electrode1
electrode2
with a fixed film length of 5 μm and film
width of 5 μm(seen in Fig1). CNT network
is transformed into effective resistor network
composed of the junction resistance between
CNT pairs. Then, we applied a nodal analysis
method to calculate a current value flowing
in a film.
To investigate diameter variation effectsyon electrical transport in CNT network,
nanotube diameter is determined by diameterx
distribution in experimental HiPco andeDIPS samples [1][2]. We will discuss the Fig1. Schematics of a random network consisting ofdetail of the obtained results in the CNTs
presentation.
[1] Z. Luo, L. D. Pfefferle, G. I. Haller, and F. Papadimitrakopoulos, J. Am. Chem. Soc. 128, 15511 (2006).
[2] T.Saito, S.Ohmori, B. Shukla, M.Yumura, and S.Iijima, Appl. Phys. Express 2, 095006 (2009).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1492
E-mail: takahiro@rs.tus.ac.jp- 91 -

2P-16
Mechanical properties of carbon nanotubes under the uniaxial strain○Kazufumi Yoneyama and Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba
305-8571, Japan
Because of tubular covalent networks of sp2 C atoms, carbon nanotubes (CNTs) are
known to exhibit remarkable mechanical properties, allowing them constituents forflexible devices and composite materials. Indeed, CNTs possess the high Young's
modulus of about 1 TPa. On the other hand, although the electronic properties of CNTs
are known to strongly correlate with their diameter and chirality, a little is known about
the mechanical properties of CNTs with respect to their microscopic geometries. In
particular, quantitative discussion about the correlation between the mechanicalproperties and network topologies are absent. Thus, in this work, we aim to elucidate
the mechanical properties of CNTs with the diameter of about 0.95 nm in terms of theirchiral angles, using the density functional theory with the generalized gradientapproximation. In particular, we provide the mechanical toughness of carbon nanotubes
against the tensile strain in terms of their chiral angles.
For the above purpose, we consider (12,0), (10,4), and (7,7) CNTs as the representative
zigzag, chiral, and armchair CNTs with similar diameters, allowing us to makequantitative investigation of the mechanical properties of CNTs with respect to theirchirality. Our calculations show that the Young's modulus is 0.741, 0.748, and 0.754
TPa for (12,0), (10,4), and (7,7) CNTs, respectively, indicating that the Young's modulus
is insensitive to the tube chirality. In contrast, mechanical toughness against the tensile
strain strongly depends on the CNT chirality. The mechanical toughness is inversely
proportional to the chiral angle. (7,7) CNT exhibits higher mechanical toughness against
the tensile strain than the other two CNTs, retaining its tubular structure up to 40 %tensile strain, while (12,0) CNT shows the least toughness among three CNTs. The
calculated critical breakdown tension is 170.82, 195.56, and 200.84 nN for (12,0),(10,4), and (7,7) CNTs, respectively.

Corresponding Author: K. Yoneyama
E-mail: kyoneyama@comas.frsc.tsukuba.ac.jp- 92 -

2P-17
SWNT films doped with Trifluoromethanesulfonic acid as durable
electrode in perovskite solar cells○ Ahmed Shawky1, Il Jeon1, Esko I. Kauppinen2, Yutaka Matsuo1,3, Shigeo Maruyama1,4,*
1Departure of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Aalto University School of Science, Aalto, FI-00076, Finland3
Hefei National Laboratory for Physical Sciences at Microscale, University of Science andTechnology of China, 96 Jinzhai Road, Hefei, Anhui 230026, China
4
Energy Nano Engineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8564, Japan
In perovskite solar cells (PCS), there is a much attention regarding easy fabrication andstability issues. Easing fabrication comes to elimination of the vacuum deposition of noble
metal electrodes like Au and Ag as well as reducing cost. Stability issues is recently addressedas these metals can interact with the perovskite layers and suppress degradation of the whole
PCS device [1]. Alternatively, single-walled carbon nanotubes (SWNT) represent a greatcandidate to replace the metal electrodes. SWNT is a favorable electrode material, owing to its
hydrophobic nature, earth-abundance, and mechanical robustness. The application of SWNT
grasps good stability and versatility in PCS [2]. The aerosol-synthesized SWNT top electrodereplacing metals in PSCs has shown the most promising potential. The application of SWNT as
the top electrode substantially enhances the stability of PSCs by removing the ion migrationand drastically reduces the fabrication cost as it can be easily deposited onto devices by a simple
mechanical transfer. As a step to increase robustness of SWNT electrodes, we showed that
sulfonic acids like Trifluoromethanesulfonic acid (TFMS) and Nafion® showed longest doping
durability compared to well-known HNO3 [3].
In this regard, we apply the TFMS mixed with polar solvent as durable dopant of SWNT to
increase both electrical conductivity and hole extraction ability of SWNT. SWNTs werelaminated on the normal CH3NH3PbI3/SnO2/ITO system as electrodes in this device. The
TFMS-doped SWNT showed an increase of the photoconversion efficiency (PEC) by 20%
compared to the SWNT-based PCS. Further analysis will be shown on this system in the
symposium. We expect that TFMS doped-SWNT-based PCS can withstand the humid air for
more than a year with negligible loss in PCE.
[1] N. N. Shlenskaya et al., J. Mater. Chem. A, 2018,6, 1780-1786.
[2] T. Sakaguchi et al., MRS Communications, 2018, DOI:10.1557/mrc.2018.142[3] I. Jeon et al., J. Mater. Chem. A, 2018, DOI:10.1039/C8TA03383H
Corresponding Author: Prof. S. Maruyama
TEL: +81-3-5841-6421
Web: http://www.photon.t.u-tokyo.ac.jp/
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 93 -

2P-18Mechanical properties of CNT spun yarn reinforcedby polymer infiltration and chemical binder○

T. Kina, M. Karita, T. Nakano, Y. Inoue

Department of Electronics and Materials Science, Shizuoka Univ., Hamamatsu 432-8561, Japan

Since the discovery of dry spinning phenomenon from a carbon nanotube (CNT) forest [1], adry-spun CNT yarn has been an attractive material as the structural material. One of goodthings of the dry-spinning is that large-scale and highly aligned CNT structures are uniformly
formed. However, since the CNTs are connected by van der Waals force, the spun yarn fails
by relative sliding of CNTs, and its high mechanical properties are far inferior to those ofindividual CNT. Further improvement of mechanical properties was required in order toapplication of CNT yarn to structural material. In this work, we focused on suppression ofrelative sliding of CNTs by polymer infiltration and chemical binder.
Dry-spin capable multi-walled CNT forests were grown on oxidized Si wafer by chloride
mediated CVD method and mist catalyst CVD method.
CNT yarns were fabricated by spinning the CNT forests.
CNT yarns were immersed in the solution of polymer orchemical binder. After a certain period of time, thesolution was removed from the CNT yarn.
Stress-strain curves of pristine and polyvinyl alcohol(PVA) reinforced CNT yarns are shown in Fig.1. By
reinforcing with PVA, compared to pristine, the tensile
strength of CNT yarns increased from 600 to 1200 MPa,and the Young’s modulus from 30 to 93 GPa. Scanningelectron microscopy (SEM) images of PVA reinforced andpristine CNT yarn are shown in Fig.2. In the case of

Fig.1 Stress-strain curves before
and after reinforcing CNT yarn.

pristine CNT yarn, there are spaces between CNTs. On theother hand, the spaces between CNTs are filled with PVA(Fig.2b). These results indicate that CNT are connected by
PVA and it suppresses relative sliding of CNTs, leading toa strong and stiff yarn.
[1] K. Jiang et al. Nature, 419, 801 (2002).
Corresponding Author: Y. Inoue
Tel: +81-53-478-1356, Fax: +81-53-478-1356
E-mail: inoue.yoku@shizuoka.ac.jp

Fig.2 SEM images of (a) pristineand (b) PVA-reinforced CNT yarns.

- 94 -

2P-19Dependence of field emission from carbon nanotube tipon the size of the counter electrode○Keita Funayama1, Jun Hirotani2, Yutaka Ohno2,3, Keiichi Shimaoka1, Hiroya Tanaka1,
Yukihiro Tadokoro1
1

Toyota Central Research & Development Laboratory, Inc., Nagakute 480-1192, Japan2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

The phenomenon of field emission has been widely used in various applications[1,2]. It is
well-known fact that the resulting tunnel current is described by Fowler-Nordheim (F-N)
theory; for the field intensity 𝜉𝜉𝜉𝜉𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒 around the emitter, the current is given as
𝐼𝐼𝐼𝐼 = 𝐶𝐶𝐶𝐶1 𝑆𝑆𝑆𝑆(𝛽𝛽𝛽𝛽𝜉𝜉𝜉𝜉𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒 )2 𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒[− 𝐶𝐶𝐶𝐶2 ⁄𝛽𝛽𝛽𝛽𝜉𝜉𝜉𝜉𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒 ] where 𝑆𝑆𝑆𝑆 is the emitting area, 𝐶𝐶𝐶𝐶1 and 𝐶𝐶𝐶𝐶2 are the constants.
This equation has been obtained under the assumption that the anodic electrode is infinite
plate, and the key parameter, enhancement factor 𝛽𝛽𝛽𝛽, isdetermined only by the shape of the emitter[3].
In nanoscale systems fabricated on the wafer by microprocess, however, it is easily supposed that the anodic
electrode is not an infinite plate but a thin film and its
size is very confined to fabricate on the narrowed area.
Owing to the effect of the finite size of the anodic
electrode, it is expected that the current does not follow
the existing F-N theory. In that case, the accurate
performance estimation of nanoscale systems, one of the Fig. 1 SEM images of the nano-emitterexamples is nano-mechanical resonator with single made of MWCNT. Electrode width is (a)MWCNT, will be difficult. The current from the emitter, 50nm, (b)100nm, and (c)300nm
tip of the CNT, is used to detect the motion of theresonator. We fabricated such system on the wafer byelectron-beam(EB) lithography and EB deposition asshown in Fig.1 to demonstrate that the influence of thefinite-anode can be described by the additional
enhancement factor.
In this work, the introduced enhancement factor has
two terms, 𝛽𝛽𝛽𝛽𝑔𝑔𝑔𝑔 and 𝛽𝛽𝛽𝛽0, which describe the influence ofthe size of the anode and the shape of the emitter,
Fig. 2 The ratio of 𝛽𝛽𝛽𝛽𝑔𝑔𝑔𝑔 depended on
respectively. Now we have 𝛽𝛽𝛽𝛽 = 𝛽𝛽𝛽𝛽𝑔𝑔𝑔𝑔 𝛽𝛽𝛽𝛽0 . Simply,
the electrode width.
𝛽𝛽𝛽𝛽0 = 𝐿𝐿𝐿𝐿/𝑑𝑑𝑑𝑑 where 𝐿𝐿𝐿𝐿 is the length and 𝑑𝑑𝑑𝑑 is the diameterof the CNT[3]. For three patterns of the anode width, 50nm, 100nm, 300nm, the current wasmeasured, and based on the F-N theory with the introduced 𝛽𝛽𝛽𝛽 , the value of 𝛽𝛽𝛽𝛽𝑔𝑔𝑔𝑔 was
calculated. Fig.2 shows the averaged ratio to the case with the width 300 nm. It was observedthat the current depends on the anode size, which indicates that the size should be consideredin the modelling of the current in nanoscale systems.
[1] J. Moser, et al., Nature Nanotech., 8, 493 (2013). [2] S. K. Georgantzinos, et al., Sensor Review, 34, 319(2014). [3] G. S. Bocharov, et al., Nanomaterials, 3, 393 (2013).
Corresponding Author: K. Funayama
Tel: +81-561-71-7421, Fax: +81-561-63-6948, E-mail: funayama@mosk.tytlabs.co.jp- 95 -

2P-20Study of the growth of MWCNT forest by chloride-mediated CVD○Kota Komastsubara, Tatsuhiro Hayashi, Motoyuki Karita, Takayuki Nakano, Yoku Inoue
Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561

Carbon nanotubes (CNTs) are expected to be used for many applications in various fields
because of their great characteristics. Vertically aligned CNT forests on substrates have been
receiving a lot of attention including researches for electrodes in energy storage, thermalinterface materials, LSI inter connects. We have been studying the growth of multi-walled CNT(MWCNT) forest by chloride-mediated chemical vapor deposition (CM-CVD) which uses ironchloride (FeCl2) as the catalyst precursor [1]. This growth method enables to deposit iron thinfilm on a substrate and to grow MWCNT forest in the same furnace. Therefore, it does not
require thin film deposition of catalyst. Moreover, the CM-CVD MWCNT forest has highgrowth rate, dense and long CNTs, and high dry-spin capability. In this study, to investigate
CNT growth mechanism, we observed very substrate surface area of the CNT forest focusing
on the morphology of iron catalyst nanoparticles.
We used oxidized Si substrate for CNT growth. The CNT growth conditions are as
follows; growth temperature: 820 °C, pressure: 20 Torr, FeCl2: 120 mg, C2H2: 200 sccm, Ar:
300 sccm, growth time: 2-6 min. We observed the cross-sectional images of MWCNT bytransmission electron microscopy, and analyzed substrate surface area including the ironcatalyst nanoparticles.
Figure 1 shows the scanning electron microscopy (SEM) images of MWCNT forest grownby CM-CVD method. The substrate was cleaved, and cross-sectional observation was carriedout. We found that the catalyst nanoparticles were diffused into SiO2 layer (shown in Fig. 2).
The iron diffusion is pronounced in the CM-CVD rather than conventional Fe-catalyst CVD.
Further, we found that additional supply of Cl2 gas in CM-CVD made the catalyst diffusion
deeper. We will present the behavior of nanoparticles in the present CVD process.

Fig.1 Vertically aligned MWCNT forest
grown by CM-CVD method.

Fig.2 Cross-sectional secondary and backscatteredelectron images of MWCNT. Fe nanoparticles are
diffused in the SiO2 layer.

[1] Y. Inoue, et al, Appl. Phys. Lett. 92, 213113 (2008).
Corresponding Author: Yoku Inoue
Tel: +81-53-478-1107, Fax: +81-53-478-1356
Web: http://cnt.eng.shizuoka.ac.jp/
E-mail: inoue.yoku@shizuoka.ac.jp- 96 -

2P-21
Growth of Multi-Millimeter-Tall Single-Wall Carbon Nanotube Forests
Using Fe/Gd/Al Catalysts○ Rei Nakagawa1, Toshihiro Sato1, Suguru Noda1, Hisashi Sugime2*
1

2

Department of Applied Chemistry, Waseda University
Waseda Institute for Advanced Study, Waseda University

Single-wall carbon nanotube (SWCNT) forests hold great possibilities for their uniquestructure including vertical alignment, high density and specific surface area, and large length,
however their application is still very limited due to the challenges it faces in their production.
Chemical vapor deposition (CVD) is one the most commonly used method for SWCNT
synthesis, and a major problem it has is the growth termination caused by the deactivation of
the catalysts. Several papers reported that the deactivation of the catalyst is closely related withthe coarsening of the catalyst nanoparticles during the growth. In general, it is more difficult tomaintain small catalyst nanoparticles than the larger ones as the mobility of the nanoparticle islarger and/or the stability is lower. In the past, to combat these challenges Cho et al. reported
the enhanced synthesis using Fe-Gd catalyst and achieved a 21.7 mm-tall multi-walled carbon
nanotube (MWCNT) forest through a 13-hour synthesis with a growth rate of 27 μm/min [1].
However, the possibility of using Gd for SWCNT growth was not discussed in detail.
In this work, we applied the Gd/Al underlayers to the growth of SWCNT forests, andsystematically studied the mechanism behind the enhanced growth. By optimizing the catalyst
condition, we have achieved a 3 mm-tall CNT array in 45 min at 800 C with 885 sccm Ar, 5
sccm CO2, 10 sccm C2H2, and 100 sccm H2 at
1 atm. It was found that Gd layer with the
thickness of less than 1 nm was effective when
it was deposited between Fe and Al layers. The
Raman spectra showed the radial breathingmode (RBM) peaks from the top to bottom of
the CNT forests, which suggests the continuous
synthesis of SWCNT. The mechanism behindthe prolonged synthesis of SWCNT wasinvestigated using the TEM-EDS.
[1] W. Cho et al., Carbon 72, 264 (2014).
Corresponding Author: H. Sugime
Tel&Fax:+81-3-5286-2769
E-mail: sugime@aoni.waseda.jp

Fig. 1 (a) CNT forest synthesized using the Gd/Al
underlayer. (b) Raman spectra (488 nm) obtained
from the synthesized CNT forest

- 97 -

2P-22
Increasing ethylene conversion efficiency using pre-catalytic treatment
prior to single-walled carbon nanotube synthesis○Naoyuki Matsumoto1, Sachiko Ishizawa1, Michiko Irie1, Megumi Hirano1,
Kenji Hata1, Don N. Futaba1
1

National Institute of Advanced Industrial Science and Technology (AIST),
Central 5, 1-1-1- Higashi, Tsukuba, Ibaraki, 305-8565, Japan.

Over the past 25 years, since the discovery of the single-walled carbon nanotube (SWCNT),
the field has taken great strides in the development of SWCNT-based and carbon nanotube(CNT)-based applications, such as composite materials, strain sensors, and fibers. Utilizing
their unique structural characteristics, such as diameter, density, and chirality, many of theseapplications benefit from their high aspect ratio, i.e. long length. One of the most common ways
to efficiently grow long CNTs is to grow them as a vertically aligned assembly, often called a“forest”. In this way, the catalysts, which are deposited onto a substrate can grow in bulk up to
the millimeter-scale, and have served as the basis for mass production, which is essential forthe development of the CNT industry. Therefore, the development of high efficiency and large
throughput methods for SWCNT synthesis is important for realizing the practical use of
SWCNT applications.
Highly efficient SWCNT synthesis has been demonstrated with a wide range of carbon
sources, e.g. ethylene, butane, acetylene, etc. as well as by appropriately “pre-heating” carbon
sources [1,2]. However, the carbon efficiency (percentage of carbon feedstock converting intoCNTs) remains only about 1-5%, which leaves the majority of the carbon source unused to form
carbonaceous impurities adsorbed onto the CNTs as well as volatile organic compounds in theexhaust gases. Acetylene has demonstrated exceptionally high carbon efficiency [2], however
does not represent a viable large scale solution to this problem as it also represents a significant
explosive hazard. To address this, we demonstrate an approach for high yield and highconversion efficiency synthesis of SWCNTs using the heterogeneous catalysis of ethylene using
catalysts prior to the substrate (denoted “Pre-Cat”). Importantly, this catalytic reaction only
requires low temperature to proceed thereby not requiring any complex heating equipment. We
achieved the high efficiency SWCNT growth by using Pre-Cat CVD method (CNT length: 1575
µm in 10 min growth time at 800 oC) with reduced ethylene concentration. The level ofsynthetic yield was similar to the normal growth (without Pre-Cat growth). In TEM observation,
the CNTs grown in Pre-Cat process were SWCNTs (the average wall number; 1.2 and thediameter; 2.9 nm), whose structures were the same as SWCNTs in normal growth.
This work was supported by JSPS Grant-in-Aid for Young Scientists (B) Grant Numbers
JP17K14091.
[1] H. Kimura et al. ACS Nano, 7, 3150 (2013).
[2] N. Matsumoto et al. Nanomaterials 5, 1200 (2015).
Corresponding Author: N. Matsumoto
Tel & Fax: +81-29-861-4654
Web: http://www.nanocarbon.jp/
E-mail: matsumoto-naoyuki@aist.go.jp- 98 -

2P-23
Preparation Conditions for Carbon Nanobrushes: Influence of Catalyst
Types○Ryota Yuge1, Fumiyuki Nihey2, Kiyohiko Toyama1, and Masako Yudasaka3, 4
1

System Platform Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan,
2
Data Science Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan,
3
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, 305-8565, Japan
4
Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan
Fibrous aggregates of single-walled carbon nanohorns, named as carbon nanobrushes(CNBs), were recently discovered [1]. The CNBs are drawing attention as electrode materials
for various devices such as nanocarbon-polymer actuators, electric double layer capacitors,
and fuel cells since they show high electrical conductivity, high dispersibility in solutions, andlarge specific surface areas. Although the CNBs are easily prepared by CO2 laser ablation of
Fe-containing carbon targets [1], their yield is low and the major products are the spherical
single-walled carbon nanohorn aggregates (CNHs). To increase the yield of CNBs, various
preparation conditions such as the Fe concentration in carbon targets, target rotation speed,
laser power density, and density of carbon target itself have been examined [2-3]. In this study,
we tried to prepare CNBs by using carbon target containing different catalysts other than Fesuch as Co and Ni. The structures of obtained samples were also studied in detail.
A CO2 laser ablated the catalyst-containing carbon targets at room temperature underambient pressure. The CO2 laser was operated at the power of 3.2 kW in the continuous-wave
mode. The target of 30 mm in diameter and 50 mm in length was rotated at 1 rpm for 30
second during the laser ablation. The gas pressure in the growth chamber was kept at 700-800
Torr by controlling the evacuation rate while the buffer gas of nitrogen was kept at a flow rateof 10 L/min. The carbon targets containing Fe (3 at. %, 1.44 g/cm3), Ni (3 at. %, 1.48 g/cm3),and Co (3 at. %, 1.45 g/cm3) were used in our experiments.
From scanning electron microscopy and scanning transmission electron microscopy
observations, CNBs were prepared effectively when the Fe catalyst was used. The CNB
quantities prepared at 3 at. % of Fe concentration was much larger than that at 1 at. %. On theother hand, CNBs were hardly prepared by using the Ni or Co catalyst. The CNHs of seed,bud, and dahlia types were mainly prepared for Ni catalyst and CNHs of petal-dahlia type for
Co catalyst. Therefore, we found that Fe catalyst is essential for CNB formation. The details
will be discussed in the presentation.
[1] R. Yuge et al. Adv. Mater. 28, 7174 (2016).
[2] R. Yuge et al. The 52th FNTG General Symposium, 3P-24 (2017).
[3] R. Yuge et al. The 54th FNTG General Symposium, 3P-19 (2018).
Corresponding Author: R. Yuge, Tel: +81-29-850-1566, Fax: +81-29-856-6137, E-mail: r-yuge@bk.jp.nec.com- 99 -

2P-24
Direct growth of graphene by low-pressure CVD--- Effect of crystal orientation of sapphire surface --○Yuki Ueda1, Jumpei Yamada1, Taishi Ono1, Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Large-size single-crystalline graphene is usually obtained on copper-based catalyst
by chemical vapor deposition (CVD). However, the transfer process, which is mandatory forthe device fabrication, largely deteriorates the grown graphene. Direct growth of graphene ona dielectric substrate is the best answer to solve the problem. C-plane sapphire isconventionally used as a substrate [1], while very few studies are reported on the optimizationof crystal orientation of sapphire surface. In this study, we use a-plane, r-plane and c-planesapphires to study their effects on the graphene growth.
Graphene was directly grown on sapphires using low pressure CVD without metal
catalyst. Mixture gas of nitrogen, hydrogen, and diethylacetylene (C6H10: 3-Hexyne) was
flown to a reactor for the growth of graphene. Growth temperature was systematicallychanged between 1090 oC and 1210 oC.
Figure 1(a) shows Raman spectra of samples grown at 1210 oC. D, G and G' peaks
were observed both on a-plane and r-plane samples. The peak intensities on r-plane sample
were stronger than those on a-plane sample. On the other hand, no Raman signal wasobserved on c-plane sample. In the case of the c-plane and a-plane samples, graphene wasfound to grow only in the pits, formed on the surface of the sapphires during CVD. The
phenomenon is similar to the case of Saito et al. [2], in which Al-rich surface was reported toappear inside the pits and to show a catalytic effect for the graphene growth. In our case ofr-plane sapphire, the graphene was found to grow simply in 2D nucleation mode. This isbecause the surface of r-plane sapphire has a catalytic effect, and enhances the decompositionof growth species. Consequently, the use of r-plane sapphire successfully brings a fast andsmooth direct growth of graphene, as shown in Fig.1 (b).

Fig. 1 (a) Effect of crystal orientation of sapphire surface on Raman spectra, and (b) AFM image ofsample grown on r-plane sapphire at 1210 oC.
Acknowledgement: This work was supported in part by JSPS KAKENHI Grant Numbers 15H03558, 26105002.
[1] M. A. Fanton et al., ACS Nano 5, 8062 (2011).
[2] K. Saito and T. Ogino, J. Phys. Chem. C 118, 5523 (2014).
Corresponding Author: Y. Ueda, Tel: +81-52-838-2387, E-mail: 173441501@ccalumni.meijo-u.ac.jp- 100 -

2P-25
Measurement of scattering time and electrical properties for grapheneusing THz time-domain spectroscopy○Takashi Fujii1,3, Kohei Soda1, Shinichiro Mouri1, Tsutomu Araki1, Yuki Ueda2,
Shigeya Naritsuka2, Toshiyuki Iwamoto3
1

Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu 525-8557,
Japan
2
Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan
3
Nippo Precision Co., Ltd, Nirasaki 407-0175, JapanTHz time-domain spectroscopy (THz-TDS) has been developed for technology
characterizing the complex permittivity, 𝜀𝜀̃(𝜔𝜔), with THz frequency region [1]. THz-TDS is thepulsed Fourier spectroscopy using the femto-second laser and the amplitude of electric field ofelectromagnetic wave can be detected along the time-domain region, ranging with pico-second.
𝜀𝜀̃(𝜔𝜔) can be calculated by using Fourier transformed results without Kramers-Kronig relations
because the amplitude of electric field was measured in THz-TDS.
It is well-known that the scattering time (𝜏𝜏) of electrons and holes in most 3-dimensional
semiconductor materials is ranging between femto- and pico-seconds. Then, it was possible tocharacterize the electrical properties, such as the conductivity, the carrier concentration and themobility, applying the Durde model by measuring 𝜀𝜀̃(𝜔𝜔) in THz frequency region.
We tried to analyze 𝜏𝜏 and the electrical properties of the graphene using THz-TDS. The
THz-TDS has the advantage of measurements for the electrical properties without making theelectrodes on the sample.
The graphene grown on sapphire substrate, of which growth temperature was systematicallyvaried, were prepared by using low-pressure chemical vapor deposition (CVD) method. Afterthe transmitting properties were measured by THz-TDS, the transmittance and the phase delay
were calculated using Fast Fourier Transform. They were analyzed by Fresnel’s formula of twolayers case. First layer was sapphire substrate and second layer was graphene with assuming its
thickness of 0.3nm.
Formula 1 shows 𝜀𝜀̃(𝜔𝜔) of graphene through the medium of 𝜏𝜏 and sheet carrier
concentration (𝑁𝑁𝑔𝑔 ) with assuming the Durde model for 3-dimensional semiconductor, where
𝜀𝜀𝑏𝑏 is background dielectric constant and 𝑣𝑣𝐹𝐹 is Fermi velocity. [2,3].

𝜀𝜀̃(𝜔𝜔) = 𝜀𝜀𝑏𝑏 −𝑒𝑒 2 𝑣𝑣𝐹𝐹 √𝑁𝑁𝑔𝑔
𝜀𝜀0 ℏ

×

1

𝜔𝜔(𝜔𝜔−𝑖𝑖 ⁄𝜏𝜏)(1)

We determined 𝜏𝜏 from the measuring results, as shown in table 1.

Table 1. Growing temperature via scattering time (𝜏𝜏).

Growing temperature (℃)

1090

1130

1170

1210

𝜏𝜏 (femto-second)

23

34

51

85

[1] T. Fujii et al. Journal of the European Ceramic Society 26, 1857 (2006).
[2] Kin Fai Mak et al. Solid State Communications 152, 1341 (2012)[3] T. Fujii et al. The65th JSAP Spring Meeting 2018, 18p-C202-8
Corresponding Author: T. Fujii
Tel: +81-77-561-2884, Fax: +81-77-561-3994,
E-mail: tafujii@fc.ritsumei.ac.jp- 101 -

2P-26
Quantum description of excitation of surface plasmon by light ingraphene
M. Shoufie Ukhtary, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Surface plasmon (SP) is electromagnetic (EM) wave propagating on the surface of a material. SP is
associated with the collective oscillation of charges on the surface of material. SP is interesting due
to the potential applications, such as optical switching devices, biosensors and wave guide based on
the excitation of SP. The strength of EM field decreases in the perpendicular direction to the surface,making the SP confined. It is well-known that the excitation of SP by external EM wave requires thematching between energy-momentum of external EM wave and SP or resonance conditions. It is also
assumed that the resonance conditions will cause an enhancement of EM wave absorption by thematerial which is shown by the peak of absorption spectrum. However, the explicit physicalexplanation of the SP excitation is not understood clearly within only the classical electromagnetism.
Furthermore, the contribution of SP excitation to the optical spectra is also not clearly understood as
far as we know.
Due to the confinement nature of SP, the quantum treatment of SP is possible, where the SP is
considered as a quasiparticle travelling on the surface. In this work, we study how the SP can bequantized as an oscillator harmonic, similar to the quantization of photon [1, 2]. In this study, we use
the quantization scheme given by Archambault et al [1], where they quantized the energy ofelectromagnetic wave on the surface by introducing creation-annihilation operators. By quantizing
the SP, we can explain why the excitation of SP requires the resonance conditions by deriving thematrix element of photon-plasmon interaction. We therefore show that the peak on the absorption
spectrum comes from theba
SP excitation by calculating
the absorption spectrum of
SP. We show that the total
absorption spectrum comesfrom the contribution of SP
andsingleparticle
excitation. In the point of(a) Excitation of SP by light. (b) The optical spectra
view of application, the(Ae,intra) consists of SP (Asp) and single
quantum description of theparticle (Asingle) contributions
interaction between lightand SP in graphene can be useful for the case that requires the matrix element of interaction inquantum mechanics, such as surface enhanced Raman spectroscopy with surface plasmon in graphene.
References:[1] Archambault et al. PRB 82 035411 (2010)[2] Finazzi et al. PRB 86 035428 (2012)
Corresponding Author: M. Shoufie Ukhtary, E-mail: shoufie@flex.phys.tohoku.ac.jp- 102 -

2P-27
New refrigeration systems
based on elastic nanosponges consisting of graphene○Hirotomo Nishihara1, Keita Nomura1, Masanori Yamamoto1, Masashi Ito2, Masanobu
Uchimura2, Takashi Kyotani1
1

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2−1−1 Katahira,Aoba, Sendai 980−8577, Japan
2
Advanced Materials Laboratory, Research Division, Nissan Motor Co., Ltd., 1 Natsushima-cho,
Yokosuka, Kanagawa 237−8523, Japan

Refrigeration is a thermodynamic process, during which heat is transferred from a
low-temperature reservoir to a high-temperature one. Air conditioners represent typicalrefrigeration systems based on the reverse Carnot cycle utilizing the latent heat of a fluid
called refrigerant (Fig. 1a). However, conventional halocarbon-based refrigerants cause ozone
depletion and global warming; therefore, it is highly desirable to replace them withenvironmentally friendly media (such as water). Refrigeration systems containing porous
adsorbents such as zeolites allow using water as the refrigerant; however, their sizes are
relatively large. In this work, we propose a unique concept of refrigeration based on thereversible phase transition of a green refrigerant (water or alcohol) occurring in elastic
nanosponge materials consisting of single-graphene walls [1-3], as shown in Fig. 1b. Its
theoretical coefficient of performance (COP) is inversely proportional to the Young’s modulus
of a nanosponge material and comparable or even potentially superior to those of
conventional air conditioners (Fig. 1c). Moreover, we demonstrate for the first time thereversible phase transition of water achieved by mediating the mechanical force applied to thereal nanosponge materials. By ‘squeezing’ a nanosponge containing liquid water, its vapor isreleased, whereas the opposite process occurs during the free expansion of the nanosponge.

Valve
4. Vapour+ liquid

Compressor

Evaporator

Win
Work

1. Saturated
QL
vapour
Coolingb
3

QH
Exhaust heat

c 25

2

20

Condenser

Switch toevaporator
4

COP

QH
Exhaust heat
2. Superheated
3. Saturated
vapourliquidCondenseraWns Valve
Evaporator

Qsh
Sensible heat

QL
Cooling1

Qf
Heat loss

15
10
5
0

εd = 0.2
εd = 0.4
εd = 0.6
εd = 0.8
Conventional system
0 1 2 3 4 5 6 7 8 9 10
Yang’s modulus / GPa

Fig. 1 (a) Schematic of the conventional refrigeration systems. The refrigerant undergoes four different phasetransformations described by the numbers 1–4. (b) Schematic of the proposing new refrigeration systems. (c)Approximate relations between the COP and Young’s modulus of the nanosponge, which were obtained atvarious strains of nanosponge (εd). Decreasing εd increases the magnitude of COP and overall nanosponge
volume, making the entire system more bulky.
[1] Z. X. Ma, T. Kyotani, A. Tomita, Chem. Commun., 2365 (2000).
[2] H. Nishihara, et al. Carbon, 129, 854 (2018).
[3] H. Nishihara, et al. Adv. Funct. Mater., 26, 6418 (2016).
Corresponding Author: H. Nishihara
Tel: +81-22-217-5627, Fax: +81-22-217-5626,
Web: http://www.tagen.tohoku.ac.jp/labo/kyotani/nishihara/nishihara_e.html
E-mail: hirotomo.nishihara.b1@tohoku.ac.jp- 103 -

2P-28Contrast mechanism of graphene oxide in Twilight fluorescence microscopy○Yu-uki Ishikawa, Masahito Sano
Department of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Japan

Twilight fluorescence (TwiF) microscopy is a newly developed microscopy that is capable ofimaging individual single-layer graphene sheet floating in a liquid [1]. The microscope utilizes
a total internal reflection (TIR) configuration. A graphene solution mixed with a highly
concentrated dye solution is placed on the glass surface. An excitation beam is incident on theglass/solution interface from below at a near TIR angle. Not only the evanescent field by TIR,
but the weak refracted ray is transmitted to the solution phase to excite the dye as well. Due tostrong absorption by the concentrated dye, the refracted ray diminishes rapidly as it travels (theinner filter effect, IFE). Thus, the region of fluorescence is localized to within a sub-micrometer
distance from the glass interface. The TwiF contrast η is given by a difference between the
fluorescence from the free dye in solution 𝐼𝐼0 and one from the dye interacting with the
𝐼𝐼 −𝐼𝐼
graphene sheet I as 0𝐼𝐼 . In this study, we examine the contrast quantitatively.
0

0.3

0.2


(1) GO attached to the glass surface
We treat the case that graphene oxide (GO) appears
darker than the surrounding solution. In this case, thecontrast η of the n-layer GO sheet is given by a form
η = 1 − a𝑇𝑇 2𝑛𝑛
where a is a constant related with Förster resonanceenergy transfer (FRET) and T is a transmittance of asingle-layer GO assumed to be independent of awavelength. We measured η from TwiF image of a
GO sheet and a height t from AFM image of theidentical GO sheet. Multi-layer sheets with clear steps
were selected. Most data points follow the theoreticalcurve well with n replaced by t. We will also discuss
FRET contribution by changing the dye and its
concentration.

0.1

0
0

5

10
15
AFM Height (nm)20

Fig. 1 TwiF contrast and AFM height ofidentical GO sheets.

(2) Floating GO away from the glass surface
Far away from the glass surface, the evanescent field from TIR is negligible and the dye is
excited by the diminishing refracted ray by IFE. It is important to know a decay constant β forthe refracted ray of a form e−βz at a distance z from the glass surface, for it is used in
evaluating the contrast η in most observations of floating sheets. We will report a value of βdetermined by analyzing a rotating GO sheet in solution.
[1] Y. Matsuno, Y. Sato, H. Sato, M. Sano, J. Phys. Chem. Lett. 2017, 8, 2425-2431.
Corresponding Author: M. Sano
Tel: +81-238-26-3072,
Web: http://sanolab.yz.yamagata-u.ac.jp/
E-mail: mass@yz.yamagata-u.ac.jp- 104 -

2P-29Exciton-phonon coupling in MoS2 by resonance Raman Scattering○ Toshiya Shirakura1, Riichiro Saito1
1

Department of Physics, Tohoku University, Sendai 980-8578, Japan

Excitonic effects are expected to be very strong for two dimension materials such as the MoS 2
transition metal di-chalcogenides (TMDs). Resonance Raman spectroscopy is a very useful tool tostudy excitonic transitions and exciton-phonon interactions in semiconductors. Exciton is the boundstates between electron and a hole. To make exciton wave function, electron and hole wave functions
should be mixed to each other. Then we can make exciton wave function that is localized in the real
space.In this work, we calculate the exciton Raman scattering for the transition metal di-chalcogenides.
We show that the A1g phonon mode is enhanced when the
excitation laser is in resonance with A and B excitons(optical transition energies are 1.88 eV and 2.03 eV
respectively) [1] of MoS2, while the E12g phonon mode isshown to be enhanced when the excitation laser is close to
C exciton (optical transition energy is 2.7 eV). We show
from the symmetry analysis of the exciton-phonon
Fig.1 Atomic displacements of the A1g
interaction that the mode responsible for the E12g resonanceand E12g phonon mode. Yellow (black)is identified as the high energy C exciton recently predictedcircle is corresponding to Mo and S atom.
by experiment [2]. In the calculation, exciton-phonon
matrix element is evaluated by resonance Raman scattering. In
order to obtain the exciton-phonon matrix element, we need tosolve the exciton wave function by Bethe-Salpeter equation(BSE). In the BSE, the direct Coulomb interaction andexchange interaction. By using maximally localized Wannierfunction (MLWF) [3].
[1] K. F. Mak, et al., Phys. Rev. Lett. 105, 136805 (2010).
[2] D. Y. Qiu, et al., Phys. Rev. Lett. 111, 216805 (2013).
[3] N. Marzari, et al., Phys. Rev. B. 56, 12847 (1997).
Corresponding Author: T. Shirakura,
E-mail: shirakura@flex.phys.tohoku.ac.jp- 105 -

Fig.2 Resonance Raman intensity for
different polarized light. The incident
photon energy is 1.96 eV. There are two
peak. One is the E2g phonon mode
resonance. The other one is A1g phononmode contribution.

2P-30
Alkali metal-assisted growth in metal-organic chemical vapor depositionof two-dimensional layered chalcogenides○Yu Kobayashi1, Shoji Yoshida2, Toshifumi Irisawa3, Naoya Okada3, Lim Hong En1,
Kenji Watanabe4, Takashi Taniguchi4, Yutaka Maniwa1, Osamu Takeuchi2,
Hidemi Shigekawa2, Yasumitsu Miyata1,*
12

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan,
Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan,
3
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8568, Japan,
4
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Metal organic chemical vapor deposition (MOCVD) is one of the most powerful ways toprepare large-scale and uniform transition metal dichalcogenide (TMDC) atomic-layers andtheir heterostructures[1-3]. So far, the progress in vapor phase growth have been achieved by
the use of metal organic precursors and additional growth promoters such as alkali metal halides.
Although several works have been reported, the roles of the promoter remain unclear. It istherefore crucial to understand and control the effects of promoter to achieve better growth.
Here, by using alkali metal compounds as promoters, we report a high-quality TMDC growthwith MOCVD. We found that the introduction of alkali metals improves various parameters,
which includes grain size, uniformity of layer number, nucleation density, and defect density of
TMDCs such as MoS2, WS2, MoSe2, and WSe2 monolayers. Besides, the alkali metal promoterswork also on the exfoliated graphite and hexagonal boron nitride, the van der Waals surfaces,in addition to SiO2 and sapphire. Our results suggest that the alkali metals may play a role inaiding the formation of intermediate products composed of alkali metals and transition metals
rather than dehydration and/or substrate surface modification. The present findings pave way
for the simple and rapid preparation of large scale, high quality TMDCs, and TMDC-based
heterostructures.

Figure 1. Optical images of MOCVD grown WS2 (a) with and (b) without NaCl on SiO2/Si, and (c) with and (d)without NaCl on hBN.
[1] K. Kang et al. Nature, 520, 656-660 (2015). [2] H.-K. Kim et al. Nano Lett., 17, 5056–5063 (2017).
[3] S. Xie et al. Science, 359, 1131–1136 (2018)
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508,
Web: http://www.comp.tmu.ac.jp/miyata/index.html, E-mail: ymiyata@tmu.ac.jp- 106 -

2P-31
Electric double layer light emitting diode of
WS2/MoS2 in-plane heterostructures
○Yuhei Takaguchi1, Jiang Pu2, Hirofumi Matsuoka2, Yu Kobayashi1,
Taishi Takenobu2, Yutaka Maniwa1, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan

Heterostructures of transition metal dichalcogenides (TMDCs) are an attractive system torealize high-performance devices including light-emitting diodes and tunnel field-effecttransistors. To maximize their potential, we have developed growth processes of various
in-plane heterostructures based on TMDC monolayers [1]. Recently, Pu et al. reported asimple way to generate light emitting diodes in a semiconductor using electric double layer[2]. By using this technique, several groups including us have demonstrated the electric
double layer light emitting diodes (EDLEDs) of TMDC-based in-plane heterostructures [3,4].
In our previous study, the MoSe2/WSe2 EDLED shows point-like electroluminescence (EL)around the heterointerface, which suggests low crystallinity of the interface. In this study, we
report an improved growth process and the observations of linear EL from the interface ofin-plane heterostructures based on TMDC monolayers.
WS2/MoS2 in-plane heterostructures was grown on sapphire substrates by using two-step,salt-assisted chemical vapor deposition (CVD) processes. First, monolayer WS2 was grownusing WO3 and Sulfur, and then, monolayer MoS2 was grown from the edge of WS2 with
MoO2 and Sulfur. Cr/Au electrodes were then deposited on the samples by using a shadow
mask or photolithography. To fabricate EDLEDs, Cr/Au electrodes were then deposited, andthen, ion gel was spin coated on the sample [2]. An illustration of device is shown in Fig.1a.
As shown in Fig.1b, the device shows linear light emission from the interface by applying
voltage at two electrodes. We also found that the EL spectrum showed the same peak as thephotoluminescence (PL) of the WS2 and MoS2 monolayers, and additional peaks wereobserved around 1.5 eV (Fig.1c). In the presentation, we will show the details of sample
preparation and discuss a mechanism of EL in the present EDLEDs.

Fig.1 (a) Illustration and (b) optical and electroluminescence (EL) images of WS2/MoS2-based EDLED device.
Arrows indicate the observed EL. (c) EL spectrum of the EDLED device[1] Y. Kobayashi et al., Sci. Rep., 6, 31223 (2016). [2] J. Pu et al., Adv. Mater. , 29, 1606918 (2017).
[3] M. Li et al., Adv. Func. Mater. 28, 1706860 (2018) [4] Y. Takaguchi et al., 53th FNTG symposium.
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 107 -

2P-32
Layer-number-controlled synthesis of WS2 integrated by Au dot
technology○Tomoya Kameyama1, Chao Li1, Toshiro Kaneko1, Toshiaki Kato1,2
1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Recently, two-dimensional (2D) materials such as graphene have attracted enormous
attention due to its intriguing electronic and optical properties [1]. Nonetheless, the metallic
property of graphene limits its semiconductor application because of the zero-bandgap
structure [2]. Transition metal dichalcogenide (TMD) is also known as one subset of 2D
materials, which possesses monolayer thickness as similar as graphene. Furthermore, theirsemiconductor band structure can be precisely changed from indirect transition to directtransition by tuning layer number from multilayers to monolayer, which makes them become
one of the most prospective candidates in many applications, such as transistors, sensors, andsolar cells [3].
In our previous research, we explored an effective method to control the nucleation site of
TMD with Au dot as nucleation center. Highly-integrated synthesis of monolayer TMD has
been realized with this method. To use this unique growth method in practical applications, itis necessary to control the structure of integrated TMD, especially layer number has to becontrolled to improve the performance of optoelectrical devices.
Then, in this study, we attempted to control the layer number of highly-integrated tungsten
disulfide (WS2) by controlling the Ar flow rate during the thermal chemical vapor deposition(CVD) synthesis with Au-dot nucleation. As the result,multilayer WS2 can be synthesized with low Ar flow rate.
On the contrary, monolayer WS2 can be obtained withhigh Ar flow rate (Fig. 1). To elucidate the critical effectof Ar flow rate during WS2 synthesis, quadrupole mass
analyzer (Q-mass) instrument was introduced to measure
the precursor change at the crystal growth region aroundthe growth substrate during all the synthesis process. As
the result, it is found that the amount of sulfur (S) in
vapor phase seems to correlate with the final product, i.e.
the layer number and size of WS2, denoting the balanceof W and S supply may be one of the critical element todecide the layer number of WS2 grown from Au dot.
[1] T. Kato and T. Kaneko: ACS Nano 8 (2014) 12777.
[2] T. Kato and R. Hatakeyama: Nature Nanotechnology 7 (2012)651.
[3] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato:
Scientific Reports: 7 (2017) 11967.
Corresponding Author: T. Kameyama
Tel: +81-22-795-7046, Fax: +81-22-263-9225,

Fig. 1 Optical microscope image of(a) multilayers and (b) monolayer
WS2 synthesized at 50 sccm and 450
sccm of Ar flow rate, respectively.

E-mail: tomoya.kameyama.r1@dc.tohoku.ac.jp- 108 -

2P-33Asymmetric carrier accumulation in bilayer van der Waals
heterostructures of TMDC under an external electric field○ Mina Maruyama, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan

Transition metal dichalcogenides (TMDCs) are representative semiconducting layeredmaterials in which each layer is bound via weak van der Waals (vdW) interaction as the caseof graphite. Thus, they are attracting much attention as for the staring materials for designing
vdW heterostructures by layer-by-layer stacking. Because of the substantial wavefunction
overlap between layers, the vdW heterostructures of TMDCs exhibit versatile electronic
structure, depending on the constituent layers and their stacking sequence [1]. In this work,
we investigated carrier accumulation in vdW heterostuctures of TMDCs under an external
electric field for providing a guiding principle to design the field-effect transistor (FET) of
TMDC vdW heterostructure using the density functional theory combined with the effective
screening medium methods.
(a)(b)
Figure 1 shows the structuralmodel and distribution of
accumulated carriers in the vdW
heterostructures consisting of
MoS2 and WS2. Our calculations
showed that the distribution of theaccumulated electrons by the field
exhibit asymmetric nature withrespect to the mutual arrangementof the vdW heterostructure to theelectrode. For the arrangementthat the electrode is situated at the
MoS2 side, the injected electron ismostly injected into a MoS2 layer,
indicating localized nature [Fig.
1(a)]. In contrast, for the opposite
TMDC arrangement, the injected
electron is relatively extended tothe second layers of TMDCs [Fig.
1(b)]. This fact implies that thecarrier accumulation in the
TMDC-FET
with
vdW
Fig. 1: Structural models and distribution of accumulated carriers
heterostructure strongly dependon the stacking sequence of their of (a) WS2/MoS2/electrode and (b) MoS2/WS2/electrodeconstituent TMDCs.
structures.
[1] A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013).
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp- 109 -

2P-34
Facile Production of MoS2 Nanosheets by Ball Milling:
Optimization of Operating Parameters○Naoko Ogino, Ahmad Tayyebi , Naoki Komatsu
Graduate School of Human and Environmental Studies, Kyoto University
Sakyo-ku, Kyoto 606-8501, Japan[1] G. Liu et al. ChemNanoMat. 2, 500 (2016)[2] C. Backes et al. Nat. Comumn. 5, 4576 (2014)
Corresponding Author: Naoki Komatsu
Tel, Fax: +91-75-753-6833
Email: komatsu.naoki.7w@kyoto-u.ac.jp

Layer numbers

Length (nm)Yield (%)

The production of 2D nanomaterials such as molybdenum disulfide (MoS2), tungsten
disulfide (WS2) and graphene have been attracting extensive interest due to their characteristic
optical and electronical properties. We recently reported that MoS2 and WS2 were exfoliated in
the presence of sodium cholate (SC) through ball milling and resulting powder was readily
dispersed in water [1]. Herein, we studied the conditions of ball milling thoroughly to obtainhigh-yield of the 2D nanosheet and control its size and thickness.
To prepare MoS2 nanosheet and its aqueous dispersion, bulk MoS2 and SC were ball milled
and the resulting black powder was suspended in water. On the ball milling, the following
parameters were investigated; ball volume ratio (φ (%) = Vball / Vcontainer), material weight ratio(SC / MoS2), milling speed, ball diameter,
and milling duration. After centrifugation of (a)φ= 10%
the suspension at 6000 rpm, the stable60
φ= 20%
aqueous supernatant was subjected to UVφ= 50%
vis and AFM analyses to determine the40
φ= 80%
yield, length and layer numbers of the MoS2
nanosheet. [2]20As shown in Fig. 1a, the material ratio
giving the best yield (%) decreased from 20
to 0.5 and 0.75, as the ball volume ratio
0
1
2
3
4
increased from 10% to 80%. The best yield
Material
ratio(SC/MoS)2(65%) was obtained at φ = 50% and SC /150
6
MoS2 = 0.75. The yield was improved to (b)14594%, when milling speed increased from5
300 rpm (Fig. 1a) to 600 rpm at φ = 50% and140
SC / MoS2 = 0.75. Under the conditions
135
4
optimized above, both length and layer
130
numbers of MoS2 decreased as the ball125
3
milling duration increased (Fig. 1b).
Length (nm)120
We are going to apply these results to theLayer numbers
115
2
production of various 2D nanosheets.
02
46Milling duration (h)Fig. 1. (a) Yield of MoS2 as a function of material weightratio of SC / MoS2 at 10, 20, 50, 80% ball volume ratio.
The milling speed and duration are 300 rpm and 6 h,
respectively. (b) Length and the layer numbers of MoS2
as a function of milling duration (φ = 50%, SC / MoS2 =0.75, and milling speed = 300 rpm).㻌

- 110 -

2P-35Laser Induced Phosphorescence of Polyyne Molecules at 20 K
○Tomonari Wakabayashi1, Kazunori Ozaki1, Hal Suzuki1, Yusuke Morisawa1,
Urszula Szczepaniak2
1

Department of Chemistry, Kindai University, Higashi-Osaka, Osaka 577-8502, Japan
2
Laboratory for Physical Chemistry, ETH Zürich, Zürich 8093, Switzerland

Intensity

Cyanopolyyne is known for its radio-frequency detection in the interstellar space in the late
70’s. Molecules up to HC9N have been confirmed, while the observation of HC11N in themolecular cloud TMC-1 [1] was recently negated [2]. Hydrogen-end-capped polyyne could bea candidate for possible interstellar molecules, though its detection was thwarted by theselection rule of the rotational transition for the centrosymmetric linear molecule [3]. Recently,
phosphorescence was observed in the laboratory for cyanopolyyne molecules, HC5N, HC7N,
HC9N, isolated in solid rare-gas matrices [4-6]. In this work, hydrogen-end-capped polyyne
was isolated in solid hexane at 20 K and laser induced phosphorescence was measured.
Sample molecules, H(C≡C)nH (n = 4−6), were prepared by laser ablation of graphite inliquid hexane, followed by separation using HPLC techniques [7]. The solution containing
size-selected polyyne molecules was condensed on a copper slab cooled at 20 K in vacuum.
The solid matrix sample was irradiated by the second harmonic of OPO laser (GWU
VersaScan, 213−302 nm) to record optical emission spectra on a polychromator with a CCD
array detector (PI320, PyLoN OE256).
0-0
The phosphorescence spectrum of C8H2
0-1
C8H2
in solid hexane at 20 K shows vibrational
=3
1.0
mse
c
progression for the symmetric stretching n2
mode of the sp-carbon chain (~2190 cm-1)
Excitation @231 nm
Detection @603 nm
at 532, 603, 694, 815, and 988 nm for the
0.00
0.02
0.04
0.06
0.08
0−n bands of n = 0−4 (Fig. 1). The lifetime
0-2Time / sec
3 +1 +was ~30 ms for the a Su → X Sg
Excitation @231.8 nm
transition (inset in Fig. 1). The excitation
0-3
0-4
spectrum of C8H2 in the UV (215−255 nm)
contains at least two components, one
600
700
800
900
1000
following the absorption spectrum in the
Wavelength / nm
solution at ambient temperature and theFig. 1. Phosphorescence spectra and temporal decay
other red-shifted.
(0-1 band) of C8H2 in solid hexane at 20 K.
[1] M. B. Bell et al. Astrophys. J. 483, L61 (1997).
[2] R. A. Loomis et al. Mon. Not. Roy. Astron. Soc. 463, 4175 (2016).
[3] J. August et al. Astrophys. Space Sci. 128, 411 (1986).
[4] M. Turowski et al. J. Chem. Phys. 133, 074310 (2010).
[5] I. Couturier-Tamburelli et al. J. Chem. Phys. 140, 044329 (2014).
[6] U. Szczepaniak et al. J. Phys. Chem. A 121, 7374 (2017).
[7] T. Wakabayashi et al. Carbon 50, 47 (2012).
Corresponding Author: T. Wakabayashi
Tel: +81-4307-3408, Fax: +81-6723-2721,
Web: http://www.chem.kindai.ac.jp/stphys/kouzou/
E-mail: wakaba@chem.kindai.ac.jp- 111 -

2P-36
Correlation between Pore Size Distribution and Hydrogen Production in
Thermal Catalytic Decomposition of Methane using Carbon Catalysts○Dai miyamoto1, Yoshito Umeda2, Hiroaki Hamaguchi3, Masashi Suzuki3, Toru Harigai1,
Tsuyoshi Tanimoto1, Hirofumi Takikawa1, Yoshiyuki Suda1
1

Department of Electrical and Electronic Information Engineering, Toyohashi University ofTechnology, Toyohashi, Aichi 441-8580, Japan2
Toho Cryogenics Co., Ltd, Nagoya, Aichi 456-0004, Japan
3
Aichi Center for Industry and Science Technology, Toyota, Aichi 470-0356, Japan
Thermo-catalytic decomposition (TCD) of methane is the attractive hydrogen production
process to mitigate CO2 emissions commonly associated with the conventional processes.
However, the problem of the process is catalyst deactivation by carbon deposition [1]. In theprevious study, we showed that activated carbon had a high specific surface area but thecatalytic activity was lost immediately [2]. The purpose of this study is to investigate thecorrelation between the catalysts pore structure and deactivation of catalysts by using four
carbon catalysts with different structures. The four carbon catalysts tested in this study were as
follows: coconut-shell activated carbon (AC), mesoporous carbon (MC), carbon black (CB)and carbon nanofiber (CNF). Experiments were carried out in a fixed-bed reactor using 1.7 gof the catalysts and the flow rate of methane gas was 50 ml/min. The reaction temperature was1173 K. The produced gas was analyzed by a hydrogen detector and gas chromatography.
Carbon catalysts before and after the experiments were analyzed by Raman spectroscopy. The
methane conversion ratio was derived from the following formula using the hydrogenconcentration obtained by gas analysis [2].
𝑀𝑀𝑀𝑀𝑀𝑀ℎ𝑎𝑎𝑎𝑎𝑎𝑎 𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐 𝑟𝑟𝑟𝑟𝑟𝑟𝑟𝑟𝑟𝑟 =𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃 𝐻𝐻2 𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐(1)
2 − 𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃𝑃 𝐻𝐻2 𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑐𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒

Temporal change of the methane conversion ratio of all the catalysts was examined. The
period for which the methane conversion ratio of 25% or higher lasted was 80 min for AC, 200
min for MC and 550 min for CB. The methane conversion ratio of CNF was low.
Table 1. Properties of the carbon catalysts.
Catalyst

Specific surface area
[m2/g]

Total pore volume[cm3/g]Micropoore volume[cm3/g]Mesopore volume[cm3/g]Particle size
[μm]

AC
CB
MC
CNF

1712
1469
1577
270

0.816
1.562
3.147
—

0.781
0.527
1.165
—

0.171
1.102
3.020
—

6.5
0.002
5
—

Table 1 shows the properties of the carbon catalysts. MC and CB had a larger mesopore
volume than AC. CB also had a small particle size compared to MC. It is thought that a large
mesopore volume as well as small particle size is effective for TCD of methane.
Acknowledgements

A part of this work was supported by “Development project of near-term hydrogen economy forming
technology”for priority of research project of Knowledge Hub Aichi. The authors would like to thank K.
Asato for emeritus Prof. of Gifu Univ. and H. Yamashita for emeritus Prof. of Nagoya Univ. with discussion
about correlation between produced carbon and methane conversion.
[1] Lee Eun Kyoung, et al, Carbon., 42, 12-13, 2641-48 (2004)[2] Haruki Nishii, et al, submitted
Corresponding Author: Y. Suda, Tel: +81-532-44-6726, E-mail: suda@ee.tut.ac.jp- 112 -

3P-1
Dynamic Behavior of a Single but Hydrogen-Bonded Water Molecule
inside a Hydroxy Open-Cage Fullerene C60 Derivative○Shota Hasegawa, Yoshifumi Hashikawa, Yasujiro Murata
Institute for Chemical Research, Kyoto University, Uji 611-0011 Japan

Hydrogen-bonded (H-bonded) H2O molecule participates in a variety of field such as protein
folding, drug delivery, catalyst, and so forth.1 However, there have been no experimental
example to see dynamic behavior of a H-bonded single H2O molecule because it is difficult toisolate the H-bonded single H2O molecule from Hydrogen-bonding (H-bonding) network. Thus,
we designed an open-cage C60 derivative H2O@2 with a large inner space and a multiplyhydroxylated opening. We expected dynamic behavior of the encapsulated H2O molecule
through H-bondings between the encapsulated H2O molecule and the OH groups on the orifice.
H2O@2 was synthesized from H2O@12 by the
Scheme 1. Synthesis of H2O@2
selective reduction of carbonyl groups on the rim of the
opening in 75% yield (Scheme 1). The single crystal
X-ray structure analysis demonstrated that H2O@2 has
a strong intramolecular H-bonding network on the
opening as well as an intermolecular H-bondings
leading to dimerization (Figure 1). In addition,
positional disorders of the encapsulated H2O molecules
were observed at positions of the center and off-center
closer to the opening with the occupancy ratio of0.11(2) and 0.81(2), respectively, indicative of thetranslational motion of the confined H2O. The 1H NMR
measurements displayed that 2 dimerizes in thesolution state. Additionally, the 1H NMR
measurements, which were performed at a low
concentration to prevent the dimerization (0.91 mM,
ODCB-d4), exhibited a downfield shift of theencapsulated H2O molecule by decreasing the Figure 1. X-ray structure of H2O@2.
temperature due to the formation of H-bondings with Solvent molecules, hydrogen atoms and aryl
OH groups on the opening. Noticeably, this groups were omitted for clarity. Thermal
elipsoids are set in 50% probability.
phenomenon was supported by the long 1H NMR
relaxation time of the encapsulated H2O molecule inside 2, reflecting the restricted rotationalmotion. In the solid state, all of the OH groups on the opening were reversibly exchangeablewith D2O. However, the confined H2O molecule was inactive against the H/D exchange with
the OD groups on the opening within 2 days. Thus, it would be concluded that the encapsulated
H2O molecule is less basic and less acidic than bulk H2O.
[1] Mahadevi, A. S.; Sastry, G. N. Chem. Rev. 2016, 116, 2775–2825.
[2] Futagoishi, T.; Murata, M.; Wakamiya, A.; Murata, Y. Org. Lett. 2013, 13, 2750–2753.
Corresponding Author: Y. Murata
Tel: +81-774-38-3172, Fax: +81-774-38-3178
Web: http://www.scl.kyotou.ac.jp/~kouzou/index.html
E-mail: yasujiro@scl.kyoto-u.ac.jp- 113 -

3P-2
Functionalization of single-walled carbon nanotube with dendrons: Control
of functionalization degree and infrared photoluminescence properties○Yui Konno1, Michio Yamada1, Yutaka Maeda1, Pei Zhao2,3, Xiang Zhao2, Masahiro Ehara3,
Shigeru Nagase4㻌
1

Department of Chemistry, Tokyo Gakugei University, Koganei, Tokyo 184-8501, Japan
Institute for Chemical Physics & Department of Chemistry, State Key Laboratory of ElectricalInsulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
3
Research Center for Computational Science, Institute for Molecular Science, Okazaki, Aichi 4448585, Japan
4
Fukui Institute for Fundamental Chemistry, Kyoto University, Kyoto, 606-8103, Japan
2

Single-walled carbon nanotubes (SWNTs) are expected for numerous applications becauseof their outstanding mechanical and electrical properties. Weisman et al. has reported nearinfrared (NIR) photoluminescence (PL) appearance from individually dispersed
semiconducting SWNTs.[1] These NIR PL between 1000 to 1400 nm, which is known as asecond NIR window, are very useful for biological imaging materials because of its biopermeability. Recently, conspicuous appearance of bright, red-shifted PL peaks arised from
SWNTs functionalization such as oxidation and arylation using ozone and aryl diazonium
compounds has been focused.[2,3] We have reported that new, red-shifted PL around 1200 nm(E11**) was emerged selectively by two-step reactive alkylation using alkyllithium and alkyl
bromide as well as by reductive alkylation using sodium naphthalenide and 1,2dibromomethylbenzene.[4,5] On the other hand, both the new, red-shifted PL peaks,
corresponding to E11* with the peak top at around 1100 nm and and E11**, were emerged by
reductive alkylation using sodium naphthalenide and benzyl bromide. Akizuki et al. hasrecently reported the new localized states of functionalized SWNTs could act as an excited state
in up-conversion PL (UCPL).[6] The E11* state has an advantage in UCPL efficiency comparedto the E11** state.[5] Herein, we report new methodology for control of functionalization degree
and emergence of new PL properties of SWNTs by reductive alkylation using alkyl bromides
bearing dendrons.
Functionalization of (6,5)-enriched SWNTs was conducted according to a reported
procedure.[4] Briefly, the SWNTs were treated with sodium naphthalenide, and then three
generations of dendron-appended alkyl bromide were added to the resulted SWNT anion,
respectively. Functionalization degree of the functionalized SWNTs was estimated from Raman
spectra. The optical properties of the functionalized SWNTs were characterized by absorption
and photoluminescence spectra. The influence of the generation of dendrons on their degree offunctionalization and optical properties will be discussed in this presentation.
[1] M. J. O’Connell et al. Science 297, 593 (2002). [2] S. Ghosh et al. Science 330, 1656 (2010). [3] S. Diao et al.
Nat. Chem. 5, 840 (2013). [4] Y. Maeda et al. Chem. Commun. 51, 13462 (2015). [5] Y. Maeda et al. Nanoscale
8, 16916 (2016). [6] N. Akizuki et al. Nat. Commun. 6, 8920, (2016)
Corresponding Author: Y. Maeda
Tel: +81-42-329-7512 E-mail: ymaeda@u-gakugei.ac.jp- 114 -

3P-3
Investigation on mechanism of voltage generation by continuous flow of fluid on surfaceof carbon nanotube thin film○

Yuzuki Ando1, Ryohei Nishi1, Shigeru Kishimoto1, Hiromichi Kataura2, and Yutaka Ohno1,3
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, 464-8603, Japan

2

Recently, the voltage generation from fluidic energy with graphene and carbon nanotubes(CNTs) is attracting much attention in the field of the energy harvesting. [1-3] Among them,the energy harvesting from continuous flow of fluid [2, 3] is considered to provide more
opportunities in various environments. The mechanism of the voltage generation by continuous
flow is, however, unclear, and understanding the physics is the most important point forincreasing output power. In this work, we have investigated the mechanism of the voltage
generation with CNT thin film by using various
Ti/Au(b) CNT Ti/Au(a)device structures and fluids.
Figure 1(a) shows a schematic structure of a
PEN
generator device consisting of a CNT thin film and
CNT PEN
Substrate
Substrate
Au electrodes on a polyethylenenaphthalate (PEN)
substrate, named Type 1. We used semiconducting
CNTs separated by gel-chromatography [4]. In thevoltage generation experiments, the fluid flows on Fig. 1 Schematic structure of generator
the CNT thin film from the top to bottom of the devices, (a) Type 1, (b) Type 2.
figure. To investigate the role of the CNT thin film,
we also fabricated the device, Type 2, where is no CNT thin filmin between two electrodes as shown in Fig. 1(b). Figure 2 shows Reservoir
a schematic of the experimental setup. The generator device wasinserted into a silicone tube, and the output voltage generated by
the flow of fluid was measured by a semiconductor device
parameter analyzer. Since a power-driven pump can be a noise+V- Rsource, the fluid is driven by the gravity. Figure 3 shows thevoltage waveform measured when deionized water was used as
the fluid. The flow velocity was ~70 cm/s. We connected a load
resistance of 100 M to stabilize the potential of the electrodes
for Type 2. The voltage generations of ~30 mV for Type 1 and~80 mV for Type 2 were observed. This suggests that the CNT
Fig. 2 Experimental setup.
thin film between the electrodes in Type 1 is not essential, but
the electrodes at both ends dominantly contributes to thevoltage generation by continuous flow of the fluid.
Type2 RL = 100 M
End
Acknowledgment: This study was partially supported by
JST/CREST (JPMJCR16Q2).
L

Type1

[1] J. Yin et. al., Nat. Nanotechnol. 9, 378, (2014).
[2] P. Dhiman et. al., Nano Lett. 11, 3123, (2011).
[3] S. Ghosh et. al., Science 299, 1042 (2003).
[4] T. Tanaka et al., Anal. Chem. 87, 9467 (2015).
Corresponding Author: Y. Ohno
Phone & Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp

EndFig. 3 Voltage waveforms.

- 115 -

3P-4
Design and fabrication of carbon nanotube analog integrated circuits○Taiga Kashima1, Jun Hirotani1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Material and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

2

Carbon nanotube thin-film transistors (CNT TFTs) are promising active component for
flexible electronics because of high carrier mobility and excellent mechanical flexibility [1]. In
recent years, high-yield and reproducible fabrication of CNT TFTs have become possible byusing purified semiconductor CNTs. This opens a possibility to realize functional integrated
circuits with CNT TFTs. Although digital circuits such as adders and CPU [2, 3] are reported,
the analog integrated circuits have not been realized yet. In this work, we have designed andfabricated the differential amplifier, which is the fundamental analog circuits, using the design
tools with the CNT TFT model we built recently [4].
The devices were fabricated on a polyethylene naphthalate(PEN) substrate. Purified semiconducting CNTs were used as thechannel. The gate oxide of Al2O3 (45 nm) layer was deposited byatomic layer deposition. By using self-align process, the parasitic
capacitances between the gate and source/drain electrodes wereminimized. The channel length of transistors was set to be 20 m,balancing the ON/OFF ratio and the cutoff frequency.
We fabricated the differential amplifier (Fig. 1) usingbootstrapped gain-enhancement (BGE) which can achieveboth high gain and variation tolerance simultaneously with
only p-type transistors. As shown in Fig.2, the fabricatedcircuit showed the gain of 25.5 dB and the bandwidth of 300
Hz at the power supply voltage of 5 V. We obtained goodFig. 1 Micrograph of differential
amplifier composed of CNT
TFTs.

agreement between measured result and the circuit
simulation based on Monte Carlo simulation, showing thereliability of our circuit design tools.

Acknowledgments: The semiconducting CNTs were provided by
TASC. This work was partially supported by JST/CREST.
[1] D. -M. Sun et al., Nature Nanotechnol. 6, 156 (2011).
[2] B. Chen et al., Nature Lett., 16, 5120 (2016).
[3] M. M. Shulaker et al., Nature, 547, 74 (2017).
[4] T. Kashima et al., The 78th JSAP Autumn Meeting, 6a-C19-4.

Fig. 2 Frequency characteristics ofMonte Carlo simulated results andmeasured result of differential
amplifier.

Corresponding Author: Yutaka Ohno, Phone & Fax: +81-52-789-5387,E-mail: yohno@nagoya-u.jp- 116 -

3P-5
Purity improvement of preferentially synthesized (6,4) single-walledcarbon nanotubes by controlling plasma parameters○Takuya Shima1, Bin Xu1, Toshiro Kaneko1, Toshiaki Kato1,2
1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Single-walled carbon nanotubes (SWNTs) have many outstanding properties due to theunique 1-dimensional structure, which make them as a promising candidate of material for highperformance optoelectrical devices. However, as the physical properties of SWNTs strongly
depend on the chirality, obtaining specific single chirality SWNTs with high quality is regarded
as a critical issue in this scientific community. Recently, we have succeeded in high purity(~57%) synthesis of (6,4) SWNTs by controlling the surface condition of the Co catalyst for the
first time [1]. To further increase the purity of (6,4) SWNTs, we focused on correlation between(6,4) SWNT growth and plasma CVD conditions.
Synthesis of high purity (6,4) SWNTs was carried out by catalyst surface condition control.
In this method, oxidation degree of catalyst surface can be well controlled by ultra-high vacuum
annealing. The small amount of reactive gas species (H2, N2, etc) were added during theannealing process, which can precisely tune the surface state of catalyst. Synthesis of SWNTs
was carried out using a home-made diffusion type plasma CVD apparatus [2]. The chirality
distribution of SWNTs was measured by photoluminescence (PL)-excitation (PLE) mappingand ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectroscopy.
Systematic experiments were conducted toreveal the correlation between (6,4) SWNTs
growth and plasma CVD conditions. Plasma
CVD was performed by changing the radio
frequency power (RF; 13.56 MHz) used forplasma generation. As a result, it is clarified thatthe purity of (6,4) SWNTs is influenced by the RF
power (Fig. 1). The purity of (6,4) SWNTs can beincreased up to 64% by adjusting plasma
conditions. In addition, it is confirmed that thechirality distribution of (7,3), (6,5), (8,3) SWNTs
is also changed by the RF power. This result
suggests that certain reactive gas species in theplasma can contribute to increasing the purity of(6,4) SWNTs. In other words, gas phase
information such as active species in plasma
which has not attracted attention so far seems to Fig.1: Typical UV-Vis-NIR spectra of SWNTs
grown by various RF power used for plasma
influence chirality selectivity.
generation.

[1] B. Xu, T. Kaneko, Y. Shibuta and T. Kato: Sci. Rep. 7, 11149 (2017)[2] T. Kato and R. Hatakeyama: Nat. Nanotechnol. 7, 651 (2012)
Corresponding Author: T. Shima
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: takuya.shima.p6@dc.tohoku.ac.jp.

- 117 -

3P-6
Selective extraction of semiconducting single-walled carbon nanotubes witha thermoresponsive polymer○Eriko Shimura, Toshiki Sugai, Shota Kuwahara
Department of Chemistry, Toho University, Chiba 274-8510, JapanThe separation techniques for obtaining single-walled carbon nanotubes (SWCNTs) withhomogeneous electronic properties is crucial for the promising electronic devices innanotechnology. The separation of SWCNTs in aqueous solution was employed by using thedifference in hydrophobicity or surface charges of the SWCNT micelles with surfactants,
which showed semiconducting and/or metallic SWCNTs in high yield [1]. Utilizing thedifference in the hydrophobicity of the SWCNT micelles, we successfully demonstrated theselective extraction of semiconducting SWCNTs with poly-(N-isopropylacrylamide)(PNIPAM) [2], a well-known thermoresponsive polymer, which shows reversible phasetransitions in aqueous solutions at the lower critical solution temperature (LCST). Above the
LCST, PNIPAM forms aggregates, globules, where hydrophobic space is generated inside,
and we separated the specific structure of SWCNTs with the solid (globule) and liquid phases.
A semi-oxidized solution of SWCNTs was prepared by mixing the dispersion of SWCNTs
in sodium cholate (SC) and sodium hypochlorite (NaClO), which was followed by mixing anaqueous PNIPAM solutions. Then, the solution was heated to 45 °C above the LCST of
PNIPAM, and incubated for 15 minutes. Finally, the liquid phase was collected. Opticalabsorption spectra of the obtained samples were collected on a UV-vis-NIR
spectrophotometer.
In the case of small-diameter nanotubes, CoMoCAT, the semiconductor SWCNTs weresuccessfully extracted into the liquid phase. The intensity corresponding to metallic SWCNTs
reduced in the absorption spectrum of the liquid phase. The re-dispersed solution of SWCNTs
captured in the globule phase of PNIPAM showed same absorption features as the original
sample. The result indicated that a part of the semiconducting SWCNTs was selectivelytransferred to the aqueous phase rather than remaining in the hydrophobic space within theglobules of PNIPAM. When the concentration of aqueous PNIPAM solutions was 5 wt%,(6,5) nanotubes were selectively extracted into theliquid phase (Fig. 1). The oxidized SWCNTs areunderstood to be easily covered by SC molecules, andto be captured in the globule of PNIPAM due to theinteraction between SC and PNIPAM. (6,5) SWCNTs
seem to be less oxidized by NaClO, and can betransferred to the liquid phase to escape from thespace inside the globules.
[1] C. Y. Khripin, et al., J. Am. Chem. Soc., 135, 6822 (2013).
[2] E. Shimura, et al., Chem. Commun., 54, 3026 (2018).
Corresponding Author: S. Kuwahara
Tel: +81-47-472-4442
E-mail: syouta.kuwahara@sci.toho-u.ac.jp- 118 -

Fig. 1 Optical absorption spectra of thepristine SWCNT solution before
extraction, the liquid phase and theglobule phase after extraction.

3P-7
Optical properties of two-dimensional lateral heterostructure
WS2/MoS2○Masafumi Shimasaki1, Tetsuki Saito2, Yasumitsu Miyata2,
Yuhei Miyauchi1, and Kazunari Matsuda1
1Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
2
Dept. of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Transition metal dichalcogenides (TMDCs, MX2, M=Mo, W; and X=S, Se;) haveattracted much attention due to stable excitons at room temperature with large binding
energy of a few hundred meV.[1] This property offers potentially a great advantage fordeveloping excitonic devices in which flow of excitons is used as an information carrierfor data processing.[2] However, it is still unclear how to control the exciton flow in
TMDCs.
Here, we report exciton transport phenomena in a lateral heterostructure of monolayer
WS2/MoS2. The sample was prepared using salt-assisted chemical vapor deposition(CVD) method on a SiO2/Si substrate. We carried out the excitation position dependent
photoluminescence (PL) measurements on the lateral heterostructure WS2/MoS2 at room
temperature under excitation energy of 2.41 eV. Figure 1 shows the position-dependent
PL spectra near the border of WS2 and MoS2; the excitation spot center was located at
the border. In this condition, the excitation laser was irradiated on both of WS2 andMoS2 equally, but almost no WS2 PL signal was observed and PL spectral shapechanged depending on the location. Even when the excitation spot was placed awayfrom the border to excite only the WS2 part, we observed MoS2 signal at the border.
These results suggest that the exciton transport is unidirectional from WS2 to MoS2; this
implies the type Ⅰ band alignment is formed near the border of WS2 and MoS2.

[1] K. F. Mak et al, Phys. Rev. Lett. 105, 136805 (2010).
[2] Marc Baldo et al, Nature Photonics 3, 558 (2009)
Corresponding Author: Y. Miyauchi
Tel: 81-774-38-3463,
Fax: +81-774-38- 3467,
E-mail: miyauchi@iae.kyoto-u.ac.jp
Fig 1. PL spectra near the border.
Spectral shape changes depending on
the location.

- 119 -

3P-8
Improved Crystallinity of CVD-Grown Atomic Layered WS2
from H2S and WF6 Precursors with NaCl Assistance○Mitsuhiro Okada1, Naoya Okada1, Wen Hsin Chang1, Atsushi Ando1, Toshifumi Irisawa1
1

Nanoelectronics Research Institute, AIST, Tsukuba 305-8568, Japan

In recent years, alkali metal halide assisted chemical vapor deposition (CVD) growth of
two-dimensional transition-metal dichalcogenide (TMD) semiconductors has been attracted agreat deal of attention because the added alkali metal halide can greatly reduce the density of
nuclei and promote 2D lateral growth of TMD [1]. With this assistance, TMD from various
precursors such as solid metal oxides and gas phase organic precursors are successfully
obtained [1]. Here, we report the effects of NaCl assistance on the crystallinity of monolayer
WS2 grown from inorganic gas phase precursors of H2S and WF6. These precursors have beenreported to result in only small grains growth with the size of much smaller than 1 μm [2]without the help of alkali metal, which is probably due to their high reactivity. We found herethat with NaCl assistance, grain size of WS2 was remarkably increased and accordingly the
optical and the electrical transport properties are significantly improved.
Figure 1 shows typical optical microscope images ofobtained WS2. While NaCl-free growth leaded to continuous
film with small nanocrystals, NaCl-assisted growth gave
triangular contrasts, indicating formation of single crystal
WS2 with the size of several microns. This result clearly
indicates that NaCl-assisted growth is very effective even in
the case of highly reactive gas precursors such as H2S and Figure 1. Optical microscope
images of WS2 (a): with and (b):WF6. The effect of NaCl assistance can also be seen in the without NaCl assistance.
difference of room-temperature photoluminescence (PL)spectrum (Figure 2). PL intensity of the NaCl-assisted grown WS2 is much stronger (over50x) than that of WS2 grown without NaCl. And PL peaks around 1.9 eV which probably
originate from defect states are only observed in the NaCl-free samples. These results strongly
suggest that the crystal quality of NaCl-assisted grown WS2 is much higher than that of
NaCl-free one. And the full width half-maximum of the PL peak from WS2 obtained by
NaCl-assisted growth is ~48 meV, which is comparable to that of previous reports (~42-68
meV) [3] using solid precursors for CVD growth. Furthermore, we could obtain thefield-effect transistor (FET) operations with on/off ratio of ~104 in WS2 grown with NaClassistance, while the NaCl-free grown WS2 does not show any FET behaviors.
In summary, we succeeded to improve the crystal quality of WS2 by introducing NaClassistance in the synthesis with H2S and WF6.
Acknowledgement: This work is supported by JST-CREST Grant No. JPMJCR16F3, JST, Japan.

[1] H. Kim et al. Nano Lett., 17, 5056 (2017).
[2] B. Groven et al. Chem. Mater. 29, 2927 (2017).
[3] H. R. Gutiérrez et al. Nano Lett., 13, 3447 (2012).
Corresponding Author: T. Irisawa
Tel: +81-29-861-3684, Fax: +81-29-861-5170,
Web: https://unit.aist.go.jp/neri/ja/teams/02_amdi/ja/index.html
E-mail: toshifumi1.irisawa@aist.go.jp- 120 -

Figure 2. PL spectra of obtained
WS2.

3P-9
Sulfur- and phosphorous-doped graphene and its battery application○Tsukasa Inoue1, Haruka Omachi1, 2, Zois Syrgiannis3, Shuya Hatao4, Hirofumi Yoshikawa4,
Maurizio Prato3 and Hisanori Shinohara1, 5
Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya, 464-8602, Japan
2
Research Center for Materials Science, Nagoya University, Nagoya, 464-8601, Japan
3
Cntre of Excellence for Nanostructured Materials (CENMAT), INSTM, Dipatrimento di Scienze
Chimiche e Farmanceutiche, Università di Trieste, Piazzale Europa, 1, 34127 Trieste, Italy
4
Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei
Gakuin University, Sanda, 669-8501, Japan
5
Institute for Advanced Research, Nagoya University, Nagoya, 464-8601, Japan1

Sulfur-doped graphene is expected various applications to oxygen reduction catalysis, t dyesensitized solar cells and electrode material for lithium ion battery. Although a lot of synthetic
studies have been reported, many problems still remain, such as low doping efficiency,
unsalable and harsh synthetic conditions [1, 2].
Here we developed sulfur-doped graphene (dGO) synthesis by the reaction graphene oxide(GO) with Lawesson’s reagent, which has a potential for mass production. X-ray photoelectron
spectroscopy (XPS) measurement revealed resultant dGO contained sulfur and phosphorus
atoms (Fig.1a). Adding to hetero-atoms doping, the reduction of GO was also confirmed by
XPS and other spectroscopic measurements. We then fabricated a nanohybrid materials withdGO and polyoxometalate (POM) as a battery cathode material. The lithium battery using
POM/dGO complex exhibited more stable cycle performance for charge-discharge process thanthe battery of the nanohybrid materials between POM and simple reduced graphene oxide(rGO) (Fig.1b) [3].

Fig. 1. (a) XPS spectrum of dGO. (b) Charge-discharge cycle performance of dGO and rGO complex[1] F. Hassani, H. Tavakol, F. Keshavarzipour, and A. Javaheri, RSC Adv. 6, 27158 (2016).
[2] L. Chen, X. Cui, Y. Wang, M. Wang, R. Qiu, Z. Shu, L. Zhang, Z. Hua, F. Cui, C. Wei, and J. Shi, Dalton
Trans. 43, 3420 (2014).
[3] K. Kume, N. Kawasaki, H. Wang, T. Yamada, H. Yoshikawa, K. Awaga, J. Mater. Chem. A. 2, 3801 (2014).
Corresponding Author: Haruka Omachi
Tel: +81-52-789-2482, Fax: +81-52-747-6442,
Web: http://nano.chem.nagoya-u.ac.jp/japanese/
E-mail: omachi@chem.nagoya-u.ac.jp, noris@nagoya-u.jp- 121 -

3P-10Properties of graphene films synthesized by lamp heating CVD○Masaki Komori1, Takatsugu Onishi1, Adam Pander1,2, Akimitsu Hatta1,2, Hiroshi Furuta1,2
12Department of Systems Engineering, Kochi Univ. Technol., Kochi 782-0003, Japan
Center for Nanotechnol., Research Inst., Kochi Univ. Technol. Kochi 782-0003, Japan

Graphene requires high synthesis temperature about 1000 ℃ for thermal CVD method.
Recently, Lamp heating CVD growth of high quality graphene films at relatively low
synthesis temperature was reported[1]. In this paper, graphene formation process at relatively
low temperature under lamp irradiation were investigated by Raman and XPS analysis.
A lamp heating CVD system was built using a cold wall chamber with a halogen lamp via aquartz window on the chamber[2]. A nickel catalyst film of 200 nm thickness was depositedon thermal CVD SiO (Ni/th-SiO) substrate by magnetron sputtering method. The Ni/th-SiO
substrate was evacuated below 5.0×10-4Pa and irradiated by the halogen lamp for 10 min in
the lamp heating CVD, and substrate temperature was raised up to about 400℃. Subsequently,
C2H2 gas was introduced into the chamber at the gas pressure of 0.25Pa to 45Pa for 10 min
synthesis. Films qualities were evaluatedby Raman spectroscopy (Horiba HR800)
and XPS (Shimadzu AXIS-HS).
Figure 1 shows Raman spectra ofdeposited films by the lamp heating
CVD[2].
Raman
spectrashowedmulti-layered graphene films (MLG)
films were synthesized on the Ni/th-SiO
substrates., G/D ratio increased to 1.9 bydecreasing deposition pressure from 44
Pa to 0.44 Pa, which indicates reductionof the defects concentration of MLG. It isalso found that increase of 2D peaks by
reducing deposition pressure, indicating Fig.1 Raman spectra of graphitic films synthesized
decreasing of layer number of MLG.
by Lamp heating CVD at 0.23Pa to 45Pa[2].
Figure 2 shows XPS C1s spectra of the MLG films
deposited by the lamp heating CVD. With decreasing thedeposition pressure from 45Pa, the C1s peak positions
increased, which would correspond to the decrease of thevacancy and improve of film quality reaching to sp2 peaks at
284.4eV. The improve of film quality of the reduction of
defect density in the MLG films was correspond to theincrease of G/D ratio found in Fig.1. In the presentations,graphene synthesis on Cu substrates will be also discussed.

[1] Y. Y. Tan et al., Carbon 50(2) 668-673 (2012).
[2] 小森雅樹 et al., 応物中四国支部講演会(2018)
Corresponding Author: H. Furuta
Tel: +81-887-57-2211,
Web: http://gecko.eng.kochi-tech.ac.jp
E-mail: furuta.hiroshi@kochi-tech.ac.jp- 122 -

Fig.2 XPS spectra of MLG films
synthesized by Lamp heating CVD
at 0.13 to 45Pa (XPS Chargebalance +2.5V)

3P-11
Near-field optical transition in graphene
F.R. Pratama1, M. Shoufie Ukhtary1, R. Saito1
1
Department of Physics, Graduate School of Science, Tohoku University
In the typical experimental set-up of tip-enhanced Raman spectroscopy (TERS), a metallic tip ofscanning probe device whose radius around 10 nm is placed sufficiently near the sample of thecharacterized material. The presence of tip enhances the intensity of Raman signal [1] due to the
localization of electric field in the vicinity the tip that is called near-field [1, 2]. The properties of opticaltransition of electron in graphene affected by near-field from the tip is not yet investigated even though thetheoretical analysis is essential for explaining the observed near-field Raman spectra of graphene. Firstly,
we calculate electric near-field enhancement around Au tip at optical wavelength λ=500-700 nm. The
calculation is performed by solving the Laplace equation numerically with finite-difference method. Fig. 1(a) depicts the calculated near-field distribution around parabolic Au tip at λ=534 nm.
(b)

(a)

Figure 1. (a) Calculated near-field enhancement distribution in the vicinity of parabolic tip (a=10nm) at excitation wavelength λ≈ 534 nm. Arrows represent the directions of total electric field. (b)Calculated optical transition probability around K point for different directions of the change ofelectron wave vector Δk.

Secondly, a monolayer graphene is placed few nm below the tip. We calculate the optical matrix
element which describes the interaction of electrons with the planar components of induced near-field. Wevary the distance of the Au tip relative to the graphene plane to capture the near-field effect on theproperties of optical transition of electron in graphene. We found that while in the case of far-field
spectroscopy the optical transition of electron from valence to conduction bands occurs vertically (with nochange of electron wave vectors) [3], the presence of the planar components of the near-field on thegraphene plane produce a new transition rule which imposes the change of electron wave vectors in the
optical transition, and becomes larger as the tip is approached to the graphene plane. Finally, by utilizing
the Fermi golden rule, we calculate the near-field optical transition probability around K point in Brillouinzone of graphene for and found that the properties of optical transition is determined by the change ofelectron wave vector Δk=(Δkx,Δky) (see Fig. 1 (b)), instead of the polarization of incoming light as in thecase of far-field spectroscopy. These phenomena are also predicted by very recent progress on theory ofinteraction between graphene and near-field from lattices of plasmonic nanoparticles [4].
References:[1] E.C. Le Ru & P.G. Etchegoin, Principles of Surface-Enhanced Raman Spectroscopy, Oxford: Elsevier(2009).
[2] J. Cui et al., Laser Phys. 23, 076003 (2013).
[3] A. Grüneis et al., Phys. Rev. B 67, 165402 (2003).
[4] N.S. Mueller & S. Reich, Phys. Rev. B 97, 235417 (2018).
Corresponding author: F.R. Pratama
Email: pratama@flex.phys.tohoku.ac.jp- 123 -

3P-12Graphene quantum dots as sensitizer in solid-state dye sensitized solar cells○Suzuka Tachi, Hiroki Morita, Toshiki Sugai, Shota Kuwahara
Department of Chemistry, Toho University, Chiba 274-8510, Japan
Dye sensitized solar cells (DSSCs) composed of porous nanocrystalline titanium oxide,dyes and electrolyte are considered to be promising alternatives to the conventional siliconsolar cells. The dyes on TiO2 efficiently absorb the incident solar light in the visible region,and convert it to electricity; dyes with enhanced light absorption are expected for the
improvement of photoelectric conversion efficiency (PCE). Graphene quantum dots (GQDs),
nanometer-sized graphene fragments, have potential for the efficient photon conversion
material due to their tunable optical and electronic properties, and upconversion opticalcharacteristics [1, 2]. Here, we utilized GQDs as the sensitizer of DSSCs, and solid-state
GQD-sensitized solar cells (GQDSSCs) were successfully fabricated with hole transportlayers (HTLs).
GQDs were prepared by using single-walled carbon nanotubes(CoMoCAT; Aldrich) via oxidation process in the mixture ofconcentrated H2SO4 and HNO3. Then, the synthesized GQDs inwater were refluxed with 1-hexanol, resulting in the esterification
at carboxy groups on the [3] GQDs. Finally, we obtained GQDs
miscible with organic solvent, and GQD ink in ethanol for thefollowing spin-coating procedure. Fig. 1 shows the structure of
GQDSSC in this work. Briefly, titanium diisopropoxidebis(acetylacetonate) was spin-coated on the cleaned fluorine doped Fig. 1 Structure of GQDSSC.
tin oxide (FTO) glass and sintered to form blocking layer (BL).
Then, TiO2 paste was spin-coated on the substrate and sintered again. After TiCl4 treatment,
the prepared GQD ink and HTL were spin-coated sequentially, following the fabrication ofelectrodes by vapor deposition of 30 nm thick gold films in vacuum.
Fig. 2 shows the current density-voltage (J-V) curvesof GQDSSCs fabricated by using different HTLs: P3HT,
spiro-OMeTAD, PTAA. Based on the obtained J-V
curves, PCEs were calculated as 0.17 %, 0.075 % and0.069 %, respectively, which is understood to be due tothe difference in the energy gap between the HOMO
energy level of the GQDs and the used HTLs. The
photoexcited GQDs requires hole transfer to the HTL
Fig. 2 J-V curves of GQDSSC
for the efficient charge separation at thewith different HTLs.
TiO2/GQD/HTL, and the sufficient potential difference
between GQDs and HTLs is needed to obtain the driving force for the hole transfer. The
increase in the current density of GQDSSC with P3HT is indicated that the sufficient potential
difference was obtained with P3HT due to its appropriate energy level with the GQDs.
[1] S. Chen, et al., J. Mater. Chem. C, 6, 6875 (2018).
[2] S. Zhuo, et al., ACS Nano, 6, 1059 (2012).
[3] H. Morita, et al., The 54th FNTG general symposium, 3P36 (2018).
Corresponding Author: S. Kuwahara, Tel: +81-47-472-4442, E-mail: syouta.kuwahara@sci.toho-u.ac.jp- 124 -

3P-13
Investigation of catalytic activity for reduction of 4-nitroaniline
with [C60]fullerene nanowhisker-platinum nanoparticle composites○Jeong Won Ko 1, Weon Bae Ko 1,2
1

Nanomaterials Research Institute, 2 Department of Chemistry, Sahmyook University,
815, Hwarang-ro, Nowon-gu, Seoul 01795, Republic of Korea

Potassium tetrachloroplatinate(Ⅱ) (K2PtCl4) and PVP dissolved into distilled water, andthen stirring for 10 min. The resulting solution was refluxed at 200 ℃ for 6 h. [C60]Fullerene
nanowhisker-platinum nanoparticle composites were synthesized using platinum
nanoparticles solution, C60-saturated toluene, and isopropyl alcohol by liquid-liquid interfacial
precipitation(LLIP)

method.

The

mixtureof[C60]fullerene

nanowhisker-platinum
nanoparticle composites was characterized by X-ray diffraction, scanning electron
microscopy, Raman spectroscopy, and transmission electron microscopy. The catalytic
activity of [C60]fullerene nanowhisker-platinum nanoparticle composites was confirmed in the
reduction of 4-nitroaniline by UV-vis spectroscopy.
0-0.2

ln (C/C0 )

-0.4
-0.6
-0.8
-1
-1.2

0

5

10

15

20

25

30

Time (min)Fig.1 Kinetic study for reduction of 4-nitroaniline with
[C60]fullerene nanowhisker-platinum nanoparticle composites[1] K. Miyazawa et al. Surf. Eng. doi.org/10.1080/02670844.2017.1396779 (2017).
[2] J. Wenhai et al. Nanomaterials 5, 2203 (2015).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318,
E-mail: kowb@syu.ac.kr- 125 -

35

3P-14Isolation and Characterization of Sc-dimetallofullerenes: Sc2Cn(n=76, 78, 80)○Shun Yoshida, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan
In the previous symposium [1], we reported the partial separation of (Sc2C76)- and (Sc2C78)and the isolation of (Sc2C80)-. For (Sc2C80)-, the ESR spectrum was measured, and theobtained ESR spectrum exhibited a large number of peaks over 100 although the nuclear spinof Sc is 7/2. Therefore, it was suggested that (Sc2C80)- would be composed by at least two
isomers such as cage structural or metal positional ones. In this study, we accomplished theisolation of (Sc2C76)- and (Sc2C78)- by using additional another column not used before: a
C18-AR-II column. Moreover, for (Sc2C80)-, two isomers were isolated and the ESR was
reinvestigated.
Starting materials were obtained by the same method reported previously [1]. Next, we
executed isolation of (Sc2C76)- and (Sc2C78)- by using a C18-AR-II column. The HPLC
chromatogram was shown in Fig. 1. The fraction A is (Sc2C76)-, and both the fraction B and C
are (Sc2C78)-. Then, two isomers of (Sc2C78)- were obtained. The UV-vis-NIR absorption
spectra were measured for isolated (Sc2C78)-. As shown in Fig. 2, two isomers of (Sc2C78)show the different UV-vis-NIR absorption spectra each other. Furthermore, since the spectraof them are different from that of (Y2@C78(D3h))-, the cage structures of two (Sc2C78)- could
not be determined.
For (Sc2C80)-, two isomers were obtained by using a C18-AR-II column. Therefore, thepossibility of two cage structural isomers becomes much higher for two components indicatedby ESR. The UV-vis-NIR absorption spectra of two (Sc2C80)- isomers show different
absorption spectra each other and the spectra also are different from that of (M2@C80(Ih))(M=Y, Ce, etc.) respectively. The assignments of the peaks of ESR spectrum of two (Sc2C80)isomers are now in progress.

-

Fig. 1 HPLC chromatogram for the isolation of (Sc2C76) and(Sc2C78)-. (Inset: LD-TOF-MS spectra of them.)

Fig. 2 UV-vis-NIR absorption spectra offraction B, C, and (Y2@C78(D3h))- [2].

[1] S. Yoshida, et al. The 54th Fullerenes-Nanotubes-Graphene General Symposium 123 (2018).
[2] N. Nakatori, et al. The 50th Fullerenes-Nanotubes-Graphene General Symposium 44 (2016).
Corresponding Author: Takeshi Kodama
Tel: +81-42-677-2530, Fax: +81-42-677-2525
E-mail: kodama-takeshi@tmu.ac.jp- 126 -

3P-15Isolation and Characterization of Dy2@Cn (n=78, 80) Anion○Ryoya Takai, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, JapanThe Dy(III) ion has long been interested as a magnetic center for single molecular magnets(SMM) because it has the large magnetic moment and anisotropy. To date, even in the research
field on metallofullerenes, Dy-metallofullerenes were studied as a candidate for SMM. For
example, Liu et al. reported the SMM behavior for the derivative of Dy2@C80(Ih):
Dy2@C80(Ih)CH2Ph[1]. This compound has an endohedral unit [Dy3+- e--Dy3+] and it leads to
the SMM behavior with the high blocking temperature. In this study, we tried to isolate
Dy2@Cn (n=78, 80) as an anion form with no functional group and characterize them byspectroscopic methods.
A soot containing Dy-metallofullerenes was produced and extracted by an almost identicalmethod previously reported[2]. Dy-metallofullerenes were extracted as an anion form andseparated by the multistage ion-pair chromatography (IPC). The IPC chromatogram at the firststage is shown in Fig.1. Fraction A and B contain [Dy2C80]- and [Dy2C78]-, respectively. By the
successive IPC, [Dy2C78]- and [Dy2C80]- were isolated and the isolation was confirmed by
LD-TOF-MS. As shown in Fig. 2, the UV-vis-NIR absorption spectra of them are almost
similar to those of [Gd2@C78(D3h)]- and [Gd2@C80(Ih)]-[3], respectively. So, the structures of[Dy2C78]- and [Dy2C80]- are suggested to be [Dy2@C78(D3h)]- and [Dy2@C80(Ih)]-, respectively.
Furthermore, the ESR spectra of them were measured at 120 K, but no signal was obtained.
More investigations for their magnetic properties are now in progress.

Fig. 1 IPC chromatogram at the first stage.

Fig. 2 UV-vis-NIR absorption spectra of[M2@C n]-(M=Dy, Gd; n=78, 80).

[1] F. Liu et al., Nat. Comm., 8, 16098(2017).
[2] N. Nakatori et al. The 49th Fullerenes-Nanotubes-Graphene General Symposium 46(2015).
[3] T. Mitani et al. The 50th Fullerenes-Nanotubes-Graphene General Symposium 95(2016).
Corresponding Author: Takeshi Kodama.
Tell: +81-42-677-2530, Fax: +81-42-677-2525
E-mail: kodama-takeshi@tmu.ac.jp- 127 -

3P-16
Influence of Purity on Thermoelectric Properties of
Semiconducting SWCNTs Thin Films○Yota Ichinose, Akari Yoshida, Kengo Fukuhara, Kanna Ikoma, Eda Junko, Hitomi Okubo,
Yohei Yomogida and Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192- 0397, Japan(a)
One-dimensional materials have potential to exhibit
extremely efficient thermoelectric performance [1].
One of suggested approaches to achieve the highest
thermoelectric performance is to tune the Fermi level ofthe 1D materials with sharp van Hove singularity(vHS). Single-walled carbon nanotubes (SWCNTs) area model for 1D system with sharp vHS, and thus we caninvestigate how the location of Fermi level influences
their thermoelectric properties. Previously, we haveinvestigated the thermoelectric properties of SWCNTs
as a function of Fermi-level using an electrolyte gating(b)
technique [2][3]. And then we demonstrated the large
Seebeck coefficient using high-purity (6,5) SWCNTs,
which was obtained by our separating technique [4].
However, influences of Metallic SWNCTs tothermoelectric properties have not been revealed
experimentally. Therefore, in this study, we preparedhigh-purity (6,5) and (6,5) mixed with Metallic
SWCNTs to investigate how the presence of metallic
SWCNTs influences the thermoelectric properties.
The high-purity (6,5) solution and Metallic
SWCNTs solution, which was prepared by densitygradient sorting, were systematically mixed with theratio of 100:0 (high-purity), 90:10 and 50:50 (alloyed),
Fig. 1 Purity dependence and Fermi level
respectively. Fig. 1(a) shows the electrical conductivity dependence of thermoelectric properties.
of three types of purity films. The most high-purity (6,5) M in legends means Metallic SWNCTs. (a)had the ON/OFF ratio of ~105, however, in the other Electrical conductivity. (b) Seebeck
films, the ratio was significantly decreased because of coefficient.
the presence of metallic SWCNTs. Fig. 1(b) shows theSeebeck coefficient of Fermi level dependence. The Fermi level dependence of high-purity andalloyed (6,5) films were remarkably different, especially around charge-neutral point. We
experimentally demonstrate that preparation of high-purity of SWCNTs is crucial forunderstanding of the intrinsic properties and maximization of their thermoelectric properties.
[1] Hicks & Dresselhaus, PRB 47, 16631 (1993) [2] K. Yanagi et al. Nano letters, 14 (11), 6437 (2014).
[3] Y. Oshima et al. Appl. Phys. Lett. 107, 043106 (2015)[4] Y. Ichinose et al. J. Phys. Chem. C, 121 (24), 13391 (2017)
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494, Fax: +81-42-677-2483, Web: http://www.comp.tmu.ac.jp/nano2/index.html
E-mail: Yanagi-kazuhiro@tmu.ac.jp- 128 -

3P-17
Passivation with Parylene-C in Carbon Nanotube Thin-film Transistors○Yuto Shimasaki1, Jun Hirotani1, Shigeru Kishimoto1, and Yutaka Ohno1,2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Material and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan
1

2

Carbon nanotube thin-film transistors (CNT TFTs) are promising active device for flexible
electronics because of their excellent electrical performance and mechanical flexibility. [1, 2]
One of the key issues to be addressed is the reliability of the device, in particular, CNT TFTs
still have electrical instability such as hysteresis [3, 4], drain current drift, and so on. In thiswork, we have investigated the surface passivation of CNT TFTs with Parylene-C.
Parylene-C is a hydrophobic polymer with rather low permeabilities for H2O and O2, and able
to be deposited at low temperature on a plastic film. The back-gate CNT TFTs were fabricatedon a Si substrate with a thermally-grown SiO2 (100 nm) layer. Parylene-C passivation layer ofa thickness of 1 µm was deposited by chemical vapor deposition at room temperature. Then,the device was baked at 180 to 300°C in the air to remove adsorbing oxygen and water. We
evaluated the width of hysteresis, measuring the transfer (ID-VGS) characteristics by sweeping
VGS in forward and reverse directions for various sweep
width (DVGS). Figure 1 shows the width of hysteresis as afunction of DVGS before and after passivation, and after
baking. The hysteresis width was reduced by thepassivation and baking, especially, the hysteresis was
effectively suppressed at DVGS < 8 V by baking at 250°C.
Interestingly, the hysteresis width increased drastically at
DVGS above 10 V in the device baked at 250°C,
suggesting there is a cause of hysteresis other thanadsorbing oxygen and water.
Acknowledgments: The semiconducting CNTs were
provided by TASC. This work was partially supported by
Grant-in-Aid by MEXT, JST/SICORP, and JST/CREST.

Fig. 1 Hysteresis width as afunction of DVGS.

[1] Q. Cao, et al., Nature 454, 495 (2008).
[2] D. M. Sun, et al., Nature Nanotechnology 6, 156 (2011).
[3] W. Kim, et al., Nano Lett. 3, 193 (2003).
[4] C. M. Aguirre, et al., Adv. Mater. 21, 3087 (2009).

Corresponding Author: Y. Ohno, Phone & Fax: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 129 -

3P-18
Numerical Simulation on Thermoelectric Power of Carbon Nanotubes
Modified by Diazonium Salts○Nayu Araki1, Takahiro Yamamoto1,2
1

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
Division of Nano carbon Research, RIST, Tokyo University of Science, Tokyo 125-8585, Japan

2

Carbon nanotubes (CNTs) are expected to be potential candidates for flexible thermoelectricmaterials with high power factor [1]. In contrast to high power factor, the thermoelectric
efficiency of a CNT is not so high because of its high thermal conductivity. Recently, several
techniques to reduce the thermal conductivity of CNTs have been proposed [2,3]. The
diazonium salt modification of CNTs is known as one of such techniques because chemical
modification of diazonium salts introduces the sp3 hybridizations, which play a role of phonon
scatterers, to the sp2-hybridized hexagonal network in a CNT. However, the details of influence
the diazonium salt modification on thermoelectric properties of CNTs have not clarified yet.
In this work, we theoretically investigate thermoelectric properties of CNTs modified bydiazonium salts using the NEGF+DFT method [5]. We clarify the dependence of the coverageof diazonium salts on the electrical conductivity, the Seebeck coefficient and the power factor.
As the modification density increases, the sp3 hybridizations acts as scatterers of electrons, so
the electrical conductivity decreases greatly. On the oter hand the Seebeck coefficient increases
due to a charge transfer from the diazonium salts to the CNT. The power factor decreases dueto the rapid reduction of electrical conductivity, but ZT is known to be increased by thediazonium-salt modification because of the rapid reduction of thermal conductivity [4]. In
addition, we clarify the optimal carrier density of CNTs for a fixed coverage of diazonium salts.

[1] Y. Nakai, et al, Appl. Phys. Express 7, 025103 (2014).
[2] T. Yamamoto, K. Sasaoka and S. Watanabe, Phys. Rev. Lett. 106, 215503 (2011).
[3] M. Ohnishi, T. Shiga and J. Shiomi, Phys. Rev. B 95, 155405 (2017).
[4] T. Fujigaya, et al., The 78th JSAP Autumn Meeting 2017 (7a-C22-9).
[5] http://www.quantumwise.co.jp/products/atk/
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1492
Web: http://www.rs.tus.ac.jp/takahiro/
E-mail: takahiro@rs.tus.ac.jp- 130 -

3P-19Coarse-grained modeling of free thermal vibrations of singled-walledcarbon nanotubes○Heeyuen Koh1, Yuta Yoshimoto2, Junichiro Shiomi2, Chiashi Shohei2, Shigeo Maruyama2,3
1

Center for Computational Science, KIST, Seoul 136-791, Republic of Korea
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo
113-8656, Japan
3
Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), 1-2-1 Namiki, Tsukuba, 305-8564, Japan2

The motion of molecules is highly stochastic but yet there are possible analytical models andsimulation methods that we can explore with different schemes. Single walled carbon nanotubes(SWNTs), which are researched in various fields of science, have well been described using
continuum mechanics frame-works thanks to its simple and intuitively the similar shape to acylinder. However, we need extra understanding for the modeling of the dynamics of SWNT
into the coarse-grained molecular dynamics (CGMD) including its thermal motion
characteristics.
The most recent progress on the macroscopic motion of SWNT [1] has established the
dynamic features for the successful coarse-grained modeling proving that the free thermal
vibration of SWNT is not a mere random motion but there is some specific behavior comparable
to the analytical solution of the nonlinear bending equation derived from Green Lagrangianstrain definition. In this presentation, we report how this thermally induced nonlinear motion
which has turned out to be one of the most basic dynamic features of quasi one dimensional
molecule, is modeled into a simple beads model in CGMD simulation. The difference of
nonlinear continuum modeling and a conventional simple beads system in CGMD will be
explained including how such understanding could be embedded in the coarse grained modeling.
More specifically, heat diffusion effect is incorporated into the equation of motion as new
damping algorithm, and this consideration allows promising results such as a well synchronized
nonlinear motion of CGMD to that of MD simulation in thermal equilibrium without external
thermostat. The effect of this finding to enhance the morphological simulation will be briefly
discussed.

[1] Koh et al., PRB, 92, 024306. (2015)

Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
Web: http://www.photon.t.u-tokyo.ac.jp/~maruyama/
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 131 -

3P-20Growth Mechanism of (6,5) Carbon Nanotube
on the Basis of Vibronic Coupling Density Analysis◦ Tomohiro Nishikawa1,2 , Tohru Sato1,2,3 , Naoki Haruta2 , Takeshi Kodama4 , Yohji Achiba4
1

2

Fukui Institute for Fundamental Chemistry, Kyoto University,
Department of Molecular Engineering, Graduate School of Engineering,Kyoto University,
3
Unit of Elements Strategy Initiative for Catalysts & Batteries, Kyoto University,
4
Department of Chemistry, Graduate School of Science, Tokyo Metropolitan University,

For the growth mechanism of single-walled carbon nanotubes by the laser ablation method,
C2 addition to the precursor cap structure on the transition metal catalyst has been proposed[1]. However, the reactivity of the capped nanotubes has not been theoretically discussed in detail. Sato et al. have reported that Vibronic Coupling Density (VCD) analysis
is eﬀective as a reactivity index for reactions, for examples, cycloaddition to fullerenes or
nanographenes, which are diﬃcult to be predicted based on the conventional frontier orbital
theory[2,3,4]. In this work, we take all the possible edge structures of (6,5) tube into consideration, and investigate their regioselectivities of cycloaddition of C2 to the edges based on
the VCD analysis as well as frontier orbital theory in order to discuss the growth mechanismof (6,5) tube.
The extended Hückel and DFT calculations were performed for the C109 H11 isomers which
are the capped (6,5) tube with all the possible edge structures. The transition metal catalyst
should give rise to charge transfer to the nanotubes. Thus, we consider anionic states of
the C109 H11 isomers. We regarded the length of the C109 H11 isomers enough to discuss thefrontier orbital patterns of the edges without inﬂuence of the cap. A C2 adduct to a C109 H11isomer has a certain edge structure which we can ﬁnd among the C109 H11 isomers. Therefore,
we can discuss the regioselectivities of the edges by using the C109 H11 isomers. We foundthat there exist recurrent reaction paths in the case that the capped tube is an acceptor.
However, if we assume the capped tube is a donor, it cannot grow up.
Following the obtained reaction paths, we sequentially added a C2 unit starting from
C109 H11 to C129 H11 , and performed VCD analyses. All the analyses indicate reactive regions
for C2 cycloadditions. This means that we succeeded in ﬁnding one-layer growth paths ofthe capped (6,5) carbon nanotube.

[1] Y.Achiba , Mol. Sci. 6, A0055 (2012). [2] T. Sato et al., J. Phys. Chem. A 112, 758 (2008). [3] T. Satoet al., Chem. Phys. Lett. 531, 257 (2012). [4] N. Haruta et al., Tetrahedron Lett. 56, 590 (2015).
Corresponding Author: Tohru Sato
Fukui Institute for Fundamental Chemistry, Kyoto University,
Nishihiraki-cho 34-4, Sakyo-ku, Kyoto 606-8103, Japan
Tel: +81-75-711-7849
E-mail: tsato@scl.kyoto-u.ac.jp- 132 -

3P-21Synthesis and characterization of one-dimensional heterostructures○Yongjia Zheng1, Yang Qian1, Ming Liu1, Akihito Kumamoto1, Yuichi Ikuhara1, Anton Anisimov2,
Esko I. Kauppinen3, Shohei Chiashi1, Taiki Inoue1, Rong Xiang1, Shigeo Maruyama1,4
1

Departure of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Canatu Ltd., Konalankuja 5, FI-00390 Helsinki, Finland3
Department of Applied Physics, Aalto University, Otakaari 1, 02150 Espoo, FI-20742, Finland
4
Energy NanoEngineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba. 305-8564, Japan
In recent years researchers have focused on two-dimensional van der Waals (vdW)
heterostructures, which have generated great interests recently due to the possibility of combining
diverse atomic layers to create novel materials and devices [1-2]. In this work, we demonstrate a
new one-dimensional structure with similar heterostructure interfaces that combines the singlewalled carbon nanotubes (SWCNTs), boron nitride nanotubes (BNNTs) and Molybdenum Disulfide
nanotubes (MSNTs) in the radial direction [3]. BNNTs and then MoS2 nanotubes were successfullygrown on the surface of SWCNTs by a facile chemical vapor deposition (CVD) technique.
Absorption spectra, Raman spectra and optical images confirmed the existence of boron nitride (BN)and MoS2 (Fig. 1a, b and c). Fig. d and e clearly show a ternary nanotube that consists of
SWCNT/BNNTs/MSNT in a coaxial structure. This structure may be used for field effect transistor,
photovoltaics and light-emitting devices.

Fig. 1: (a) Left plot is Raman spectra of SWCNTs/BNNTs with different BN growing time; Rightplot is Raman spectra of SWCNTs/BNNTs before and after MoS2 growth. (b) Absorbance of
SWCNTs before and after BN and MoS2 growth. (c) Optical images show how a SWCNTs filmchanges after BN and MoS2 growth. (d) TEM image and (e) EELS mapping of a 5 nm diameter
ternary nanotubes consisting one layer of carbon, three layers of BN and one layer MSNT. Scale bar,
5 nm.
Corresponding Author: S. Maruyama[1] D. Jariwala et al., Nature materials, 16, 170 (2017).
Tel: +81-3-5841-6421,[2] Z. Liu et al., Nature Nanotechnology, 8, 119 (2013).
[3] R. Xiang et al., arXiv:1807.06154

Fax: +81-3-5841-6983,
E-mail: maruyama@photon.t.u -tokyo.ac.jp- 133 -

3P-22Growth of vertically-aligned single-walled carbon nanotubes having small
diameters using Ir catalysts in alcohol gas source method○Takuya Okada1, Kamal P Sharma1,2, Tomoko Suzuki2, Takahiro Saida1,2, Shigeya Naritsuka3
Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
Nanomaterials Research Center, Meijo University, Japan3
Department of Materials Science and Engineering, Meijo University, Japan2

1. Introduction
Single-walled carbon nanotubes (SWCNTs) have been anticipated for application in a lot of
future nanodevices. To fabricate SWCNT devices in conventional LSI process, it is important to growhigh-density semiconducting SWCNTs under high vacuum. So far, we succeeded in growth of smalldiameter SWCNTs with narrow diameter distribution using Pt catalysts [1]. However, the SWCNT
yield was not so high. In this study, we carried out SWCNT growth using Ir catalysts by alcohol
catalytic chemical vapor deposition (ACCVD) method to increase the yield of small-diameter
SWCNTs.
2. Experimental procedure
Using Ir catalysts, SWCNTs were grown on SiO2/Si substrates by ACCVD in an ultra-highvacuum (UHV) chamber, a type of cold-wall CVD equipment. The growth temperature was 800°C
and growth time was set between 10 and 180 min. The grown SWCNTs were characterized by FESEM and Raman spectroscopy.
3. Results and Discussion
Irrespective of the growth time, both G band and radial
breathing mode (RBM) peaks were observed, indicating that
SWCNTs were grown from Ir catalysts. Fig. 1 shows Raman
spectra of SWCNTs grown under ethanol pressure of 110-1 Pa,
when the growth time was 180 min. Taking into account “Katauraplot”, the SWCNT diameters were considered to be distributed
between 0.83 and 1.1 nm. Fig. 2 shows an SEM image of thesample in Fig. 1. High-density vertically-aligned SWCNTs wereobserved, whose lengths were about 2 m. We will also discuss theelectronic type of grown SWCNTs.
This work was supported in part by Private University Research
Branding Project from the Ministry of Education, Culture, Sports,
Science and Technology (MEXT), Japan. Part of this work was
conducted at the Institute for Molecular Science (IMS), supported by
the “Nanotechnology Platform” of the Ministry of Education,
Culture, Sports, Science and Technology (MEXT), Japan.
[1] T. Maruyama et al. Mater. Express 1 (2011) 267.
Corresponding Author: T. Maruyama
Phone: 81-52-838-2386, Fax: 81-52-832-1172
E-mail: takamaru@meijo-u.ac.jp- 134 -

Fig.1 Raman spectra

Fig.2 SEM image

3P-23
Relationship between Catalysts andDiameter of Single-Walled Carbon Nanotubes○Akio Nakano1
1

Yokohama Science Frontier High School (YSFH), Tsurumi-ku, Yokohama 230-0046, Japan

Single-walled carbon nanotubes (SWCNTs) are expected to be applied to various industrial
fields. The SWCNTs can be produced by arc discharge using carbon electrodes containing Ni
or Y2O3 as a catalyst under low-pressure helium circumstance. In this study, the effect of molar
ratio of Ni : Y2O3 (Table 1) contained in a carbon cathode on a diameter of SWCNTs wasconsidered. The diameters (nm) of SWCNTs were calculated with the wavenumbers of Radial
Breathing Mode (RBM, peaks at 160-240cm-1) on Raman spectra, by formula [1] as below,
 Dt = 248 / ω  (Dt: diameter of tubes, ω:wavenumbers of RBM)
Table 1. The ratio of catalysts.
ratio I
2:1
0.05870.1129

Molar ratio (Ni : Y2O3)
Ni (g / 2.00g Carbon)
Y2O3 (g / 2.00g Carbon)

ratio II
1:1
0.02940.1129ratio III
1:2
0.02940.2258Peaks of RBM at around 165cm-1 were mainly observed with small peaks on the larger sideof wavenumbers. These peaks appeared at five positions on the Raman spectra, which were
calculated in approximately 1.50, 1.45, 1.36, 1.32 and 1.09nm, as given on Table 2. With ratio
I, only a single RBM peak was appeared, and Dt was in the largest region, 1.50nm. The double
peaks were obtained with ratio II or III. The triple peaks were observed only with ratio III.
Table 2. Diameter (nm) of SWCNTs produced under ratio I-III of catalysts
Dt 1.50nm
I(s)
1.486
II(s)
1.519
II(d)
1.502
III(s)
1.501

Dt 1.45nm

III(s)
III(d)
III(t)

1.445
1.467
1.448

Dt 1.36nm
II(d)Dt 1.32nm

Dt 1.09nm

1.362
III(d)
III(t)(s):RBM with single peak (d):with double peaks (t):with triple peaks

1.323
1.317

III(t)

1.090

Double or triple peaks of RBM indicate the formations of SWCNTs with small diameters.
The decrease in the diameter of the SWCNTs is related to the increase in the ratio of Y2O3. As
a result, it is obvious that the diameter of the SWCNTs is related to the ratio of the catalysts of
Ni : Y2O3.
[1] R.Saito, et al., Phys.Rev.B, 61, 2981 (2000).
Corresponding Author: A. Nakano
Tel: +81-45-511-3654, Fax: +81-45-511-3644 (YSFH)- 135 -

3P-24In situ synchrotron X-ray diffraction study of precipitation of multilayer
graphene from Ni catalyst○Jumpei Yamada1, Yuki Ueda1, Shun Takenaka1, Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University,
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Because of the superior characteristics of graphene, it is highly supposed to apply in various
fields, such as electrical wiring in integrated circuits, transparent electrodes of light emitting diodes.
The precipitation method is able to grow multilayer graphene simply by annealing the sample. In themethod, a carbon sauce and catalytic metal are deposited on a requested substrate. In order to obtainhigh-quality multilayer graphene, it is necessary to fully understand the behavior of carbon atoms
during the process. In situ X-ray diffraction (XRD) measurement is one of excellent methods to detect
the state of crystals. Therefore, in this study, BL11XU of SPring-8 was used to in situ monitor the
precipitation of graphene using XRD measurement.
Amorphous carbon (a-C) (5 nm) and Ni (300 nm) layers were deposited on a sapphire (0001)
substrate using electron-beam deposition. The sample was loaded in an ultra-vacuum chamber andannealed in BL11XU of Spring-8. The sample was firstly pre-annealed at 300 oC, and the temperature
was increased to 890 oC at a rate of 100 oC/min. After the annealing period of 30min, the temperature
was cooled to 300 oC at a rate of 100 oC/min. During the thermal process, the sample was in situ
monitored using XRD.
Figure 1 (a) shows an optical microscope image and Raman spectrum of a precipitatedgraphene sample. The observation of G and G’ peaks with G'/G ratio of 0.32 indicates that multilayer
graphene was successfully precipitated on the sample. Fig.1 (b) shows the intensity change ofgraphene (10) diffraction peak through the annealing. In the heating period, the intensity increased,
and it continuously decreased during the annealing period. This possibly corresponds to the diffusionof carbon atoms from the a-C layer to the Ni catalyst. On the other hand, the peak intensity increased
again during the cooling period. This can be ascribed to the precipitation of graphene. The in situ XRD
is quite useful to directly observe the growth of graphene, and its behavior is clearly characterized by
the analysis of the experimental data.

Fig. 1 (a) Optical microscope image and Raman spectrum of sample, and (b) intensity change ofgraphene (10) diffraction peak during annealing.
Acknowledgement: This work was supported in part by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011. The author was indebted to several members of National Institutes for Quantum andRadiological Science and Technology (QST): Drs. M. Takahashi, T. Sasaki and S. Fujikawa for in situ XRD
measurement.
Corresponding Author: J.Yamada, E-mail: jjjjjjyyyyyy119@gmail.com- 136 -

3P-25
Mechanism of on/off improvement of graphene nanoribbon transistors
synthesized by advanced plasma CVD
○Noritada Ogura1, Hiroo Suzuki1, Toshiro Kaneko1, and Toshiaki Kato1,2

1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

ID [A]In recent years, graphene nanoribbon (GNR), strips of two-dimensional (2D) graphene into
one-dimensional (1D) structure gathers intense attentions because of their superior electricalfeatures. Although GNR can be made in a variety of ways, the reliable site and alignment
control of GNR with high on/off current ratios remains a challenge.
Our research group synthesized suspended GNRs by an advanced plasma CVD process
combining with unique nanobar structures as a catalyst [1-3]. In our method, GNRs could be
nucleated on the surface of the liquid phase Ni nanobar. The droplets of Ni move to electrodedirection due to the capillary force, resulting in the formation of suspended GNR structures(Fig. 1(a)).
In our original method, the on/off current ratio of GNR transistor synthesized from Ni
nanobar was low (~5). Recently, it is found that the on/off can be drastically improved bychanging the materials of nanobars from Ni
to Ge. However, the critical reason for thison/off improvement is not clear.
In this study, we carefully analyzed thestructure of GNR grown from Ge nanobar
by atomic force microscopy (AFM) and try(b)㻌
to identify the origin of on/off improvement.
Based on the systematic comparison
between AFM data and electrical transport
properties, it is found that the very narrow(< 10 nm) and thin (< 5 nm) GNR
structures are locally formed in the GNR
with higher on/off (Fig. 1(b)), denoting
such local structures can effectively
Fig. 1 (a) Schematic illustration of GNR growth with 㻌
conduct the current switching through GNR. plasma CVD from nanobar catalyst. (b) Typical drain-㻌
Since our unique plasma process possesses source current (I ) - gate bias voltage (V ) curves of 㻌DGsignificant advantage for the integrated GNR devices fabricated with Ge nanobars under the 㻌synthesis of GNR, this high on/off GNR adjusted plasma conditions.㻌
grown from Ge nanobar can contribute torealizing high-performance logic circuit with integrated GNRs.
[1] T. Kato and R. Hatakeyama: Nature Nanotechnology 7 (2012) 651.
[2] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa and T. Kato: Nature Communications 7 (2016)
11797.
[3] H. Suzuki, N. Ogura, T. Kaneko, T. Kato: Scientific Reports (2018) in press.
Corresponding Author: N. Ogura
Tel: +81-22-795-7046, E-mail: noritada.ogura.p6@dc.tohoku.ac.jp- 137 -

3P-26
Hydrogen adsorption on atomic vacancies in Epitaxial graphene toward
Hydrogen storage○Y. Obata1, K. Kusakabe2, G. Sunnardianto2 T. Enoki3, I. Maruyama4, T. Nishimura5, K.
Takai1, 5
1Dept. Applied Chemistry, Hosei University, Tokyo 184-8584, Japan, 2Dept. Materials
Engineering Science, Osaka University, Osaka 560-8531, Japan, 3Tokyo Institute ofTechnology, Tokyo 152-8550, Japan,4Dept. of Information and Systems Engineering,
Fukuoka Institute of Technology, Fukuoka 811-0295, Japan, 5Research Center of Ion BeamTechnology, Hosei University, Tokyo 184-0002, Japan
Defects introduction is one of the important strategy to tune graphene properties. Especially,
it is known that an ion beam irradiation can introduce atomic vacancies in graphene [1]. In theprevious study, we demonstrated that the chemical structure of defects in graphite surface andepitaxial graphene can be tuned by the subsequent adsorption of hydrogen and oxygen
molecules after defect formation [2]. For hydrogenated atomic vacancies, the theoretical
calculation shows a low energy barrier and little adsorption heat for the additional adsorptionof hydrogen molecules [3], suggesting an efficient hydrogen storage and release in this system[4]. In this study, hydrogenated atomic vacancies are introduced into epitaxial graphene and theamount of hydrogen and carrier scattering related to vacancies are evaluated.
Atomic vacancies were introduced into the surface of epitaxial graphene grown on SiC by Ar
ion beam sputtering at 100 eV after pre-annealing, followed by exposing to hydrogen molecules.
Raman spectroscopy and Elastic recoil detection analysis (ERDA) were measured by LabRAM
HR Evolution (532 nm) and Van der Graaff accelerator AN2500, respectively.
ERDA profile reveals epitaxial graphene consists of three layers; contamination layercomposed of hydrocarbons, defects layer terminated with hydrogen, and bulk SiC. After the ion
beam irradiation and hydrogen adsorption, the increment of hydrogen is comparable to theupper limit for the number of vacancies. The smaller Raman D-band for hydrogenatedvacancies than that for oxygen terminated vacancies suggests the inter valley scattering depends
on the chemical structure of defects in graphene.
[1] Hahn and Kang, Phys. Rev. B. 60, 6007 (1996). [2] Obata, et al., FNTG 54 (2018). [3] G. Sunnardianto,et al, Int. J. Hydrogen
Energy, 43 (2017). [4]K. Kusakabe, G. Sunnardianto, T. Enoki, I. Maruyama, K. Takai, Patent No. PCT/JP2017/31325-nationC 0.5, H 0.5

Defects+ H2

C 0.993, H 0.007

SiliconC 0.4985 Si 0.4985

carbideH 0.003

10.0
900
500

C 0.5, H 0.5
C 0.987, H 0.013
C 0.4985 Si 0.4985
H 0.003

8.0

1000
700

15

Hydrogen15
2(1 × 10 Atoms / cm )ContamiThickness
15
2(1 × 10 Atoms / cm )H2

Pristine

10
50

Pristine Vacancy+ H2

Fig.2 Hydrogen Amount in defects layer

Fig.1 ERDA analysis- 138 -

3P-27
Plasmon Resonance-Induced Electronic Transition in Graphene
ZHANG Jinjiang1; ZHOU Ruifeng1, 2, MINAMIMOTO Hiro2; ○MURAKOSHI Kei2
1

Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido 060-0810, Japan
2
Institute for International Collaboration, Hokkaido University, JapanThe fascinating electrical and optical properties of graphene render it wide application inphotoelectronic devices. Its optical response and electronic interaction with substrate has been
well investigated with Raman spectroscopy [1]. In the surface-enhanced Raman spectroscopy(SERS), band intensities are enhanced and new features may emerge due to the localized surface
plasmon resonance (LSPR) of metal nanoparticles. In this work, the SERS spectra of monolayer
graphene were investigated under electrochemical potential control. The influences of LSPR
on the electronic excitation process in graphene were discussed.
Graphene was synthesized on Cu foil via chemical vapor deposition method and wastransferred onto ITO glass (Gr/ITO glass) with poly(methyl methacrylate). The as-transferredgraphene number of layer was confirmed to be single-layer and defect-free via the Raman
spectroscopy. Au nano-dimers were fabricated onto Gr/ITO glass (Au/Gr/ITO glass) via angleresolved nano-sphere lithography method [2]. The electrochemical Raman spectroscopy was
carried out with a three-electrode system and 785 nm laser was used to excite the LSPR (Figure).
Around 1600 cm−1, three sub-bands were observed in SERS of the single-layer defect-freegraphene, in contrast to the single G band in the normal Raman spectrum. Electrochemical
SERS showed that energy of one of the sub-bands shifts with potentials in a manner very similar
to the G band, while the other two sub-bands were not sensitive to potential change. Thus, thethree sub-bands can be assigned to the G band and two non-zero wavevector phonon modes,
D7 and D’. The visualization of the non-zero
wavevector phonon modes in a defect-free graphene is
ascribed to the plasmon-induced non-verticalelectronic excitation. Furthermore, the SERS spectra
differ from the normal Raman spectra of graphene atboth low and high doping levels. At low doping level,
the G phonon renormalization was suppressed; at highdoping level, the quantum interference was smearedout. These findings demonstrate the modification ofphotoexcitation by LSPR. The new photoexcitation
pathways not only change the optical response ofgraphene, but also alter the electrochemical potentials Figure. Electrochemical Raman spectroscopy
and SEM image of Au-covered graphene.
of hot electrons and holes.
[1] R. Zhou et al. ACS Omega, 3, 2322 (2018).
[2] S. Yasuda et al. ACS Appl. Mater. Interfaces, 9, 38992 (2017).
Corresponding Author: MURAKOSHI Kei
Tel: +81-(0)11-706-2704, Fax: +81-(0)11-706-4810,
Web: http://wwwchem.sci.hokudai.ac.jp/pc/
E-mail: kei@sci.hokudai.ac.jp- 139 -

3P-28Band gap modulation by chiral phonon oscillations intransition metal dichalcogenides○ Ahmad R.T. Nugraha, Nguyen T. Hung, Riichiro Saito

Department of Physics, Tohoku University, Sendai 980-8578, Japan

A recent experiment has demonstrated that clockwise and anticlockwise rotations of atoms intransition metal dichalcogenides (TMDs) for a particular phonon mode can be understood ascompletely different modes with opposite angular momenta [1], known as chiral phonons [2].
The chiral phonons can be observed by applying pump-probe technique with combination ofleft- and right-handed circularly polarized light between the pump and probe light. Bymeasuring the absorption in the TMDs and taking Fourier transform (FT) of the absorption
difference due to left- and right-handed circularly polarized light, several peaks at certain
frequencies of a phonon mode emerge in the FT spectra. For example, there is a series ofpeaks with integer multiple of longitudinal acoustic (LA) mode frequency in the FT spectra of
TMDs. However, beyond the interpretation that chiral phonons exist, the reason why there
could be higher-order overtone modes for a given chiral phonon remains unclear.
In this work, by using first-principles calculation, we propose that the chiral phonons in the
TMDs modify the band gaps of the TMDs within a cycle of rotation in a particular direction.
We take an example of LA phonon at K point in MoSe2, in which it is possible to have each
atom in the unit cell at three distinct phases (0, 2π/3, and 4π/3) before returning to the initial
position of oscillation. We find that the bandgap of MoSe2 is modified by the three phases of
LA phonon because the atomic structure of MoSe2 is also altered by the phonon oscillation.
Since the absorption is affected by the band gap of the material, we argue that the band gap
modulation by chiral phonons is a possible origin of the overtone of chiral phonons.
[1] H. Zhu et al., Science 359, 579–582 (2018).
[2] L. Zhang and Q. Niu, Phys. Rev. Lett. 115, 115502 (2015).
Corresponding Author: A.R.T. Nugraha
Tel: +81-22-795-6442, Fax: +81-22-795-6447
E-mail: nugraha@flex.phys.tohoku.ac.jp- 140 -

3P-29Improved interlayer couplingin suspended MoS2/WS2 van der Waals heterostructures○Kana Kojima, Hong En Lim, Takahiko Endo, Yu Kobayashi,
Yutaka Maniwa, Yasumitsu Miyata
Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, JapanThe van der Waals (vdW) heterostructures of two-dimensional materials have attracted
much attention for their superior electrical and optical properties. The superconductivity
illustrated in bilayer graphene and the formation of interlayer excitons in the TMDC-based
vdW heterostructures for instance, are promising for optoelectronic applications [1-3].
Recently, large-area vdW heterostructures with clean interface have been successfully
prepared on Si substrates using chemical vapor deposition (CVD) method. However, for such
CVD-grown heterostructures on SiO2 surface, the lattice strain caused by the substrate has
resulted in a weakened interlayer coupling and PL broadening. Herein, by removing theunderlying SiO2/Si substrate used, we demonstrate an improved interlayer coupling in
CVD-grown MoS2/WS2 heterostructures.
MoS2/WS2 heterostructures grown on SiO2 surface by CVD were transferred onto a TEM
grid to form the suspended structure. This process can suppress tensile strain induced by the
supporting substrate, as confirmed by the blue shift in the PL peak of monolayer TMDCs. For
the suspended MoS2/WS2 heterostructures fabricated, an interlayer exciton peak appears at
1.63 eV, which is not observed on the substrate supported one. This implies an enhanced
interlayer coupling in the free-standing sample, highlighting the importance of studying theseatomically thin vdW heterostructures without the substrate influence. Our results provide a
simple method for understanding the intrinsic physical properties of TMDCs and thedevelopment of sophisticated optoelectronic devices.

Fig. 1 PL spectra of MoS2/WS2 vertical heterostructures grown on SiO2 and after the transfer on a TEM grid.
[1] Y. Cao et al. Nature 556, 43-50 (2018).
[2] P. Rivera et al. Nat. Commun. 6, 6242 (2015)[3] L. Britnell et al. Science 340, 6138 (2013)
Corresponding Author: Y. Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 141 -

3P-30Electric Double Layer Transistors of CVD-grown monolayer InS and InSe
○Jiang Pu 1, Han-Ching Chang 2, Chien-Liang Tu 2, Kuang-I Lin 3, Chien-Nan Hsiao 4
Chang-Hsiao Chen 2, and Taishi Takenobu 1
1

Department of Applied Physics, Nagoya Univ., Nagoya 464-8603, Japan
Department of Automatic Control Engineering, Feng Chia Univ., Taichung 40724, Taiwan
3
Center for Micro/Nano Sci. and Tech., National Cheng Kung Univ., Tainan 70101, Taiwan
4
Instrument Tech. Research Center, National Applied Research Lab., Hsinchu 30076, Taiwan
2

Current progress of group-VI transition metal dichalcogenides has provided attractive
platform to explore new functional electronic and optoelectronic device applications [1].
More recently, group-III monochalcogenides, especially for InS and InSe, gain further
attentions due to their potential high mobility of 103 cm2/Vs and high on/off ratio of 108 at
room temperature arising from lighter electron effective mass than that of group-VI [2].
Therefore, group-III monochalcogenides are promising for high-performance transistor
applications, however, most of the InS and InSe transistors have been fabricated on exfoliatedflakes, which results in uncontrollable sample size/thickness and poor reproducibility ofdevice fabrication/performance. Hence, the chemical vapor deposition (CVD) of high-quality
monolayers is necessary, and the evaluation of transistor properties using such CVD-grownsamples should be addressed. Here, we establish scalable CVD synthesis of highly crystalline
InS and InSe monolayers. Using these samples, we fabricate transistors with both
SiO2-back-gated and electrolyte-gated structures to compare their transport properties,
resulting in significant mobility enhancement in the high carrier density of > 1013 /cm2 [3,4].
The InS and InSe monolayers were synthesized on mica substrate through a vapor phasereaction by putting In2O3 and S (Se) powders together inside a tube furnace system. Then, themonolayer flakes were transferred onto SiO2/Si substrate to deposit Au electrodes. Finally, iongels, a mixture of ionic liquids and polymers, were drop-casted, followed by putting Pt foil on
the top of ion gels as a top gate (Fig. 1). Figure 2 shows the transfer curve of ion-gel-gated
InSe transistors. We obtained n-type behavior with on/off ratio of 105. Interestingly, as shownin the inset of Fig. 2, the comparison between SiO2 gating and ion-gel gating indicates several
orders enhancement of electrical conductivity inion-gel transistors. This result suggests the trap
density which might be originated from defects
and/or disorders during CVD process affectedtransport properties; thus, high carrier density
accumulations effectively screened them to improve
performance. Based on capacitance measurements,
the electron mobility was calculated up to 30 cm2/Vs
in CVD-grown InSe monolayers. We’ll also present
the transistor characteristics of InS monolayers anddiscuss their transports on hBN substrates.
[1] Q. H. Wang et al., Nat. Nanotechnol. 7, 699 (2012).
[2] D. A. Bandurin et al., Nat. Nanotechnol. 12, 223 (2017).
[3] J. Pu et al., Adv. Mater. 28, 4111 (2016).
[4] H.-C. Chang et al., Small under review (2018).
Corresponding Author: J. Pu, T. Takenobu
Tel/Fax: +81-52-789-5165,
E-mail: jiang.pu@ngoya-u.jp, takenobu@nagoya-u.jp- 142 -

3P-31
Chalcogen substitution in monolayer transition metal dichalcogenides○Hiroshi Shimizu, Hong En Lim, Takahiko Endo, Yu Kobayashi,
Yutaka Maniwa, Yasumitsu Miyata*
Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
In recent years, heterostructures of transition metal dichalcogenide (TMDC) atomic
layers have been actively studied for their unique physical properties and potential
applications in electronics and opto-electronics. Even though TMDC-based
heterostructures are mainly fabricated by transfer and direct growth techniques, achalcogen substitution approach may also provide a simple way to produce a vast arrayof heterostructures and superlattices [1]. However, there are only a few works reported
so far, and it remains unclear whether the reactivity in chalcogen substitution will beaffected by the defect density and the chemical composition of sample used. To clarify
this issue, we have investigated the chalcogen substitution in various monolayer
semiconducting TMDCs, including MoS2, MoSe2, WS2, and WSe2.
Monolayer TMDCs were grown at 820 ℃ on silicon substrates using salt-assisted
CVD method [2]. For the chalcogen substitution, monolayers of MoSe2 (MoS2) andWSe2 (WS2) were annealed under sulfur (selenium) atmosphere. Figure 1 shows theRaman spectra of the MoSe2 and WSe2 before and after the annealing process. A notablechange is observed for the MoSe2 after annealing, where the A’1 mode at 240 cm-1 hasdiminished, along with the emergence of peaks derived from MoSSe [3] and MoS2 atthe edge and center regions of the grain. Interestingly, the Raman peaks of MoS2 isrecorded mainly at the center region. In contrast, there is no noticeable difference
registered for the monolayer WSe2 under the same annealing condition. These results
suggest that the reactivity of TMDCs depends strongly on their composition and defectdensity, offering a facile way to fabricate the desired heterostructures based on TMDCs.



Fig. 1 Raman spectra of (a) monolayer MoSe2 and (b) monolayer WSe2 before and after the annealing,
together with those of monolayer MoS2 and monolayer WS2 for comparison.
[1] M. Mahjouri-Samani et al., Nat. Commun, 6, 7749 (2015).
[2] S. Li et al., Appl. Mater. Today, 1, 60 (2015).
[3] J. Zhang et al., ACS Nano, 11, 8 (2017).
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp

- 143 -

3P-32
Energetics and electronic structures of MoS2 nanoribbons○Hisaki Sawahata1, Mina Maruyama1, Susumu Okada1
1

Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan

Atomic layer materials are attracting much attention as emerging materials for thenanoscale low-dimensional devices, such as sensing, optical, optoelectronic, and electronic
devices, because of their unique geometric and electronic structures. Following the synthesisof graphene, various atomic layer materials have been synthesized using exfoliation and CVD
techniques. Transition metal dichalcogenides (TMDCs) are representative two-dimensional
materials with the semiconducting electronic properties which are sensitive to constituent
elements. Because of tunable electronic structures by the constituent elements, TMDCs are
now considered to be promising materials for functional devices in the next generation.
Besides the choice of the constituent elements, by analogy with graphene, TMDCs may
exhibit further variation in their electronic properties by controlling their local and global
network topologies. Thus, in this work, we aim to investigate the energetics and electronic
structures of MoS2 nanoribbons with respect to their edge shape for proving the theoreticalinsight into the fundamentals of material and device designs using TMDCs.
All calculations are conducted using the density functional theory combined with theeffective screening medium method to exclude the unintentional dipole effect arising from its
polar edges. Figure 1 shows optimized structures of MoS2 nanoribbons with armchair, chiral,and zigzag edges. The substantial structural reconstruction occurs at the armchair edges oraround the armchair portion of the chiral edges. In contrast, the reconstruction is absent in thenanoribbon with zigzag edges. Our calculations demonstrate that the MoS2 nanoribbon withzigzag edges has the lowest total energy among the nanoribbons studied here, even though the
ribbon has polar edges.

Fig.1 The optimized structures of the MoS2 nanoribbons.
Corresponding Author: H. Sawahata
Tel: +81-29-8535921
E-mail: hsawahata@comas.tsukuba.ac.j- 144 -

3P-33Fabrication and transport properties of PN diodes
based on monolayer MoS2/WSe2 vertical heterostructures○Shintaro Yoshimura, Yu Kobayashi, Takahiko Endo, Hong En Lim,
Yutaka Maniwa, Yasumitsu Miyata
Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
Two-dimensional transition metal dichalcogenides (TMDCs) have attracted much attention
because of their unique structural and highly-tunable electronic properties. In particular,
TMDC-based PN junctions are promising for the application in light emitting devices andtunneling field effect transistors. In previous studies, the PN diodes were generally preparedusing exfoliated atomic layers of TMDCs such as p-type WeS2 and n-type MoS2 [1, 2].
Meanwhile, as chemical vapor deposition (CVD) provides a useful way to prepare large-area
and uniform monolayers of TMDCs, it is therefore important to develop a device fabrication
process and to understand the device performance of the PN diodes formed using the CVDgrown monolayers. In this work, we have fabricated the PN diodes based on the CVD-grownmonolayer MoS2/WSe2 vertical heterostructures and investigated their transport properties.
The MoS2 and WSe2 monolayers were grown separately on silicon substrates by salt-assisted
CVD method [3]. They were then transferred onto a Si substrate by means of a polymer-assisted
process to form the heterostructures. As shown in the optical microscope image (Fig.1a), largearea (~100 m) grains of MoS2 and WSe2 can be successfully stacked, as confirmed by the PL
spectra (Fig. 1b). The PN diode was fabricated by depositing Ni/Au and Cr/Pd/Au electrodes
onto the MoS2 and WSe2, respectively. The Id-Vds curves of the device operated at different gate
voltage are illustrated in Figure 1c, where it shows clear rectification property, characteristic ofa PN junction. Detailed fabrication process and the transport properties of the devices will befurther discussed in this presentation.

Fig.1 (a) The optical microscope image and (b) PL spectra of a vertically stacked MoS2/WSe2 heterostructure. (c)The Id-Vds curves of the MoS2/WSe2 device operated at various gate voltages. Inset: Model of the present device.
[1] T. Roy et al., ACS Nano, 9, 2071-2079 (2015).
[2] C. Lee et al., Nature Nanotech., 9, 676-681 (2014).
[3] S. Li et al., Appl. Mater. Today, 1, 60-66 (2015).
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 145 -

3P-34
Resonance characteristics of the cantilevered BN by electrostatic actuation○Daiki Yoshikawa1, Kuniharu Takei1, Takayuki Arie1, and Seiji Akita1
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan[1] A. Yoshinaka et al, Appl. Phys. Lett. 98, 133103 (2011).

SU-8
10 μm

h-BN
Au
electrode

10 μm

Fig. 1 Optical microscope image of BN
NEMR. An inset shows the mapping of hBN peak of Raman spectroscopy around1365 cm-1.

C1

Csub

VAC

h-BN
VDC

C2

SU-8

Fig. 2 An equivalent circuit model.
Amplitude (arb.units)

Two-dimensional atomic layer materials are
attracting much attention as many useful devicematerials due to their excellently electrical, optical andmechanical properties. Among others, opticallytransparent materials such as BN is expected to be highperformance nano-electro-mechanical resonators(NEMR). For sensor application of NEMR,
photothermal effect affects its resonance property, so
elimination of the photothermal effect is very crucial
for accurate sensing. Here, we demonstrate the effectof the electric field on the resonance characteristics ofan electrostatically actuated BN-NEMR, which is anelectric insulator, based on the dielectric effect.
BN flakes were prepared by a mechanicalexfoliated method. To fabricate the BN-NEMR, amultilayered BN was transferred onto insulator (SU-8)
ridge with a height of 1.5 μm by the gel transferring
method as shown in Fig. 1. Note that a pair of Au
electrodes for the actuation of BN-NEMR is placed
underneath the SU-8 support. The resonance of thecantilevered BN-NEMR was measured using opticaldetection method[1].
Figure 2 represents the simplified equivalent circuitof the proposed BN-NEMR. AC bias (VAC) + DC bias
(VDC) was applied between the electrodes for theelectrostatic actuation, where the cantilevered BN acts
as the movable dielectric layer between the electrodes
as shown in Fig. 2. Based on this model, theelectrostatic force F acting on the BN-NEMR isapproximately described as(1)
𝐹𝐹 ≈ 𝛼𝛼𝑉𝑉𝐷𝐷𝐷𝐷 𝑉𝑉𝐴𝐴𝐴𝐴
in linear response regime with small vibration
amplitude, where α is constant determined from thedevice configuration.
Figure 3 shows VAC dependence of the resonancecharacteristics of the cantilevered BN-NEMR. At
VAC=1 V and VDC=0 V, the amplitude increases withlarger VAC with the resonance frequency around 1347.5
kHz. Thus, we have successfully actuated thecantilevered BN, which is an insulator. Figure 4 shows
VAC dependence of the oscillation amplitude withvarious VDC. The oscillation amplitude of BN-NEMR
was linearly changed with respect to VAC according to
Eq. 1.

0.008
0.007
0.006
0.005
0.004
0.003
0.002

VAC=0.5 V
VAC=0.75 V
VAC=1 V
VAC=1.25 V
VAC=1.5 V
VAC=1.75 V

0.001
0
1340

1345

1350

1355

Frequency (kHz)Fig. 3 VAC dependence of resonancecharacteristics applied VDC=1.5 V.

Amplitude (arb.units)

1

0.01

VDC=0 V0.008

V =0.5 V

0.006

V =1.5 V

0.004

DC

V =1 VDC
DC

V =2 V
DC

0.002
0
0

0.5

1

VAC (V)

1.5

2

Acknowledgement This study was partially supported by
Fig. 4 VAC dependence of the vibration
JSPS KAKENHI Grant Numbers JP15H05869, JP16K14259,
amplitude with a parameter of VDC.
JP16H00920, JP17H01040.
Corresponding Author: D.Yoshikawa, Tel: +81-72-254-9261, E-mail: yoshikawa-4@pe.osakafu-u.ac.jp- 146 -

3P-35Vibrational spectra of methylated forms of the cytosine in the region
specific to hydrogen bonding relative to graphene pore interaction○Tatiana Zolotoukhina1, Toshihito Nitta 1
1

Department of Mechanical Engineering, University of Toyama, Toyama 930-8555, JapanDNA methylation is an epigenetic mechanism involving the transfer of a methyl group onto
the cytosine to form 5-methylcytosine (5MC) and 5-hydroxymethylcytosine (HMC) that
regulate, as a signaling tool in the human genome, gene expression and silencing and can leadto oncology. Gradual development of single-molecule resolution in the tip-enhanced andsurface-enhanced Raman spectroscopy, (TERS & SERS) promotes experimental work on
DNA sequencing by SERS method and approaches single oligomer resolution [1-2]. As thenext clinically important step, the optical identification of methylated forms of cytosine andadenine in the confirmed DNA sequence will be required with single-base precision.
Numerical simulations to characterize vibrational spectra of different polymorphisms in the
DNA strands become an instrument of prediction of spectral maps of the methylated
nucleotides that were predicted by molecular dynamics (MD) simulation. Fourier transfer ofthe density of states (DOS) let us to obtain the spectra of various bonds in reaction
coordinates for DNA nucleotides during transport through the 1.5nm graphene nanopore [4].
The vibrational frequencies were acquired for the methylated forms of cytosine vs.
unnmethylated ones at the range 400-2000 cm-1 at a numerical resolution 20 to 40 cm-1. The
frequencies that can serve as markers of the corresponding base methylation status have been
evaluated. To confirm obtained MD results, calculation of DFT based Raman frequencies ofC(10)-O(1 N(5)-C(2 C(10)the cytosine nucleobase methylation have been carried out.
6)㻌㻯㻔㻝㻜㻕㻙㻻㻔㻝㻢㻕㻯㻔㻝㻜㻕㻙㻻㻔㻝㻢㻕

㻢㻜

㻡㻜

㻟㻜

㻯㻔㻝㻜㻕㻙㻯㻔㻟㻕

㻌㻰㻻㻿

㻢㻜

㻌㻰㻻㻿

㻠㻜

㻌㻰㻻㻿

㻠㻜
㻞㻜

㻟㻜

㻝㻜

㻰㻻㻿

㻰㻻㻿

㻰㻻㻿

㻰㻻㻿

㻠㻜

㻞㻜

—C(3
)㻌

㻯㻔㻝㻜㻕㻙㻯㻔㻟㻕

㻌㻰㻻㻿

)㻌

㻞㻜

㻞㻜

㻝㻜

㻜

㻜
㻜

㻜

㻙㻞㻜
㻝㻜㻜㻜

㻝㻞㻜㻜

㻝㻠㻜㻜

㻝㻢㻜㻜

㼒㼞㼑㼝㼡㼑㼚㼏㼥㻌㻔㼏㼙㻙㻝㻕

㻝㻤㻜㻜

㻞㻜㻜㻜

㻙㻝㻜
㻞㻜㻜㻜 㻞㻞㻜㻜 㻞㻠㻜㻜 㻞㻢㻜㻜 㻞㻤㻜㻜 㻟㻜㻜㻜 㻟㻞㻜㻜 㻟㻠㻜㻜 㻟㻢㻜㻜 㻟㻤㻜㻜 㻠㻜㻜㻜㻝㻜㻜㻜㼒㼞㼑㼝㼡㼑㼚㼏㼥㻌㻔㼏㼙㻙㻝㻕

㻝㻞㻜㻜

㻝㻠㻜㻜

㻝㻢㻜㻜

㻝㻤㻜㻜

㻙㻝㻜
㻞㻜㻜㻜 㻞㻜㻜㻜 㻞㻞㻜㻜 㻞㻠㻜㻜 㻞㻢㻜㻜 㻞㻤㻜㻜 㻟㻜㻜㻜 㻟㻞㻜㻜 㻟㻠㻜㻜 㻟㻢㻜㻜 㻟㻤㻜㻜 㻠㻜㻜㻜㼒㼞㼑㼝㼡㼑㼚㼏㼥㻌㻔㼏㼙㻙㻝㻕㼒㼞㼑㼝㼡㼑㼚㼏㼥㻌㻔㼏㼙㻙㻝㻕Fig.1 Spectral frequencies of hydroxymethylcytosine calculated by MD outside of graphene pore (vz=0)
and as compared to the DFT calculations of Raman frequencies for the C(10)-C(3) & C(10)-O(16) bonds.

The vibrational frequencies were acquired for the C5’methylated and hydroxymethylated
cytosine at the range 400-2000 cm-1 in MD simulation using reaction coordinates.
Translocation through the graphene nanopore was shown to suppress a number of frequencies,
especially H bond stretching. The frequencies of the methylated forms defined by H bondstretching at the region 2000-4000 cm-1 were resolved for the H-X (X=C, N, O) bonds.
Comparison of MD and DFT calculation outside the graphene pore gave close frequency
values in that region in the absence of interaction with graphene.
[1] L.-J. Xu, Zh.-Ch. Lei, J. Li, et al., JACS 137, 5149-5154 (2015).
[2] D.M. Sagar, L. E. Korhoj, K. B. Hanson, et al., Small 14, 1703165 (2018)
Corresponding Author: T. Zolotoukhina
Tel: +81-76-445-6739, Fax: +81-76-445-6739, E-mail: zolotu@eng.u-toyama.ac.jp- 147 -

3P-36First-principles study of magnetism in vanadium selenide thin films○Mohammad Saeed Bahramy1,2, Masaki Nakano1, Satoshi Yoshida1, Yue Wang1, Hideki
Matsuoka1, Yuki Majima1, Yuta Ohigashi1, Yuta Kashiwabara1, Masato Sakano1, Kyoko
Ishizaka1,2, Yoshihiro Iwasa1,21Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
2
RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 Japan

Transition-metal dichalcogenides have attracted a great deal of attention in the recent years
due to their rich and varied properties. The single layer variants of these systems are
considered as one of the most prominent examples of two-dimensional materials beyond
graphene. Remarkably it’s been recently proposed that the monolayer of the transition metal
dichalcogenide VSe2 can exhibit room temperature ferromagnetism, making it one of a few
examples of two-dimensional ferromagnetic materials discovered so far [1]. However, thisfinding has been challenged by the recent angle-resolved photoemission spectroscopy
measurements, showing no sign of time reversal breaking in the electronic structure of thepristine VSe2 [2]. To address this issue, we have performed systemic first-principles
calculations for both bulk and thin films of VSe2 and its V1+xSe2 derivatives. Our calculations
indicate that while the pristine VSe2 can in principle form a weakly ordered ferromagnetic
phase, introducing intercalated V sites substantially affects such an ordering. In thispresentation, we compare the electronic structure properties of these systems in two and three
dimensions and further discuss the effect of V interaction on the magnetic properties of
V1+xSe2.
[1] M. Bonilla et al., Nat. Nanotechnol. 13, 289 (2018).
[2] J. Feng et al., Nano Lett., 18, 4493 (2018).
Corresponding Author: M. S. Bahramy
Tel: +81-03-5841-6840,
E-mail: bahramy@ap.t.u-tokyo.ac.jp- 148 -

発表索引
Author Index

Author Index<A>
Achiba, Yohji
Ago, Hiroki
Aizaki, MotokiAji, Adha Sukma
Akazawa, Keisuke
Akita, Seiji
Ando, Atsushi
Ando, Yuzuki
Anisimov, Anton
Arai, Hayato
Araki, Nayu
Araki, Tsutomu
Arie, Takayuki
Asada, Toshihiro
Asaka, Kinji

3P-14, 3P-15, 3P-20
1P-3, 1P-33, 2-1,
2-2, 2P-11
2P-1
1P-33
1P-24
1P-4, 1P-24, 1P-25,
3P-34
3P-8
3P-3
3P-21
1P-23
3P-18
2P-25
1P-4, 1P-24, 1P-25,
3P-34
1-10
1-6

<B>
1-4
Baek, Jinseok
Bahramy, Mohammad Saeed 3P-36
3-8
Bando, Yuki
<C>
Chang, Han-Ching
Chang, Wen Hsin
Chen, Bozhi
Chen, Chang-Hsiao
Chen, GuohaiCheng, Hui-Ming
Chiashi, Shohei

3P-30
3P-8
1P-6
3P-30
1-3, 3-2
3-3
1P-19, 1P-21, 1P-23,
3-7, 3P-19, 3P-21<D>
Davis, Robert C.
Deshpande, Vikram

1-3
1-8

<E>
Eda, Junko
Ehara, MasahiroEndo, Takahiko

3P-16
3P-2
3P-29, 3P-31, 3P-33

Enoki, Toshiaki
Erkılıç, Ufuk

3P-26
2P-11

<F>
Fujigaya, Tsuyohiko
Fujii, Takashi
Fujii, Yasumaru
Fukuhara, Kengo
Fukuyama, Hidetoshi
Funayama, Keita
Furuta, Hiroshi
Futaba, Don

1P-9, 1P-10, 1P-14
2P-25
1-11
3P-16
2P-10
2P-19
1P-20, 2P-13, 3P-10
1-3, 2P-22, 3-2<H>Hamaguchi, Hiroaki
Hanaoka, Takuma
Harigai, Toru
Haruta, Naoki
Hasegawa, Shota
Hashikawa, Yoshifumi
Hashimoto, Michihiro
Hata, Kenji
Hatao, Shuya
Hatta, Akimitsu
Hayashi, Hironobu
Hayashi, Sachio
Hayashi, Tatsuhiro
Heguri, Satoshi
Hibino, Hiroki
Hirahara, KaoriHirakawa, Kazuhiko
Hirano, Atsushi
Hirano, Megumi
Hirotani, Jun
Hisama, Kaoru
Homma, Yoshikazu
Hori, Masashi
Horii, Hikaru
Hoshino, Tohru
Hoshino, Yudai
Hotta, Takato- 149 -

2P-36
1P-27
2P-36
3P-20
3P-1
3P-1
2S-5
1P-16, 2P-14, 2P-22,
3-2
3P-9
1P-20, 2P-13, 3P-10
3-10
1P-20
2P-20
2-6
1P-3
2S-5
3-5
1-1, 1P-7
2P-22
1P-8, 2P-4, 2P-19,
3P-4, 3P-17
1P-19
3-5
1P-25
2P-10
1-5
1-12
1P-5

Hsiao, Chien-Nan
Hung, Nguyen Tuan<I>
Ichinose, Yota
Iijima, Sumio
Ikeda, Keiichiro
Ikoma, Kanna
Ikuhara, Yuichi
Ikuta, Yoshiue
Imahori, Hiroshi
Inoue, Taichi
Inoue, Taiki

3P-30
1P-1

Kato, Toshiaki

Inoue, Tsukasa
Inoue, Yoku
Irie, Michiko
Irisawa, Toshifumi
Ishiguro, Yasushi
Ishikawa, Yu-uki
Ishizaka, Kyoko
Ishizawa, SachikoIslam, Md Shafiqul
Isobe, Hiroyuki
Itami, Kenichiro
Ito, Daisuke
Ito, Masashi
Iwamoto, Toshiyuki
Iwasa, Yoshiro
Iwasaki, Yuya

3P-16
1-2
1-7
3P-16
3-7, 3P-21
2-2
1-4, 1P-27
1P-4, 1P-24, 1P-25
1P-21, 1P-23, 3-7,
3P-21
3P-9
2S-6, 2P-18, 2P-20
2P-22
2P-30, 3P-8
1P-30
2P-28
3P-36
2P-22
1P-1
2P-5
2-4
1P-23
2P-27
2P-25
3P-36
1P-15

<J>
Jeon, IlJi, Hyun Goo

2-7, 2P-17, 3-1
1P-33, 2P-11<K>
Kalita, Golap
Kameyama, Tomoya
Kanazawa, Katsuki
Kaneko, Toshiro
Karita, Motoyuki
Kashima, Taiga
Kashiwabara, Yuta
Kataoka, Yosuke

Kataura, Hiromichi

1P-34
1-9, 2P-32
1P-26
1-9, 1P-2, 2P-7,
2P-32, 3P-5, 3P-25
2P-18, 2P-20
3P-4
3P-36
1P-22

Kato, Yuichi
Kato, Yuichiro K.
Kaupinnen, Esko I.
Kawahara, Kenji
Kawai, Tsuyoshi
Kawano, Yukio
Khaniya, Sharma Aliza
Kikuchi, Koichi
Kina, Taichi
Kioka, Yusei
Kishimoto, Shigeru
Kitamura, Yuichiro
Kitano, Takuya
Kitaura, Ryo
Ko, Jeong Won
Ko, Weon Bae
Kobashi, Kazufumi
Kobayashi, Naoya
Kobayashi, Yu
Kodama, Naoko
Kodama, Takeshi
Koh, Heeyuen
Kojima, Kana
Kokubo, Ken
Komatsu, Naoki
Komatsubara, Kota
Komori, Masaki
Konno, Yui
Koretsune, Takashi
Koyano, Bunsho
Kubota, Mariko
Kumamoto, Akihito
Kusaba, Satoshi
Kusakabe, Koichi
Kuwahara, Shota
Kyotani, Takashi- 150 -

1-1, 1P-7, 2-5,
3P-3
1-9, 1P-2, 2P-7,
2P-32, 3P-5, 3P-25
1P-16
3-4
2P-17, 3-1, 3-7,
3P-21
1P-3, 2-1, 2-2
2P-2
3S-8
1P-34
3P-14, 3P-15
2P-18
2P-9
1P-8, 2P-4, 3P-3,
3P-4, 3P-17
1P-17
2P-2
1P-5
3P-13
3P-13
1-6, 1P-16
1-10
2P-30, 2P-31, 3P-29,
3P-31, 3P-33
1P-30
3P-14, 3P-15, 3P-20
3P-19
3P-29
2P-14
1P-18, 1P-36, 2P-34
2P-20
3P-10
3P-2
3-8
1P-21
2-5
3-7, 3P-21
1P-29
3P-26
3P-6, 3P-12
1-10, 2P-27

<L>
Lach, Mackenzie
Lahiri, Nabajit
Laine, M. Richard
Li, Chao
Li, Lain-Jong
Li, YanLim, Hong En
Lin, Cheng-Te
Lin, Hao-Sheng
Lin, Kuang-I
Lin, Yung-Chang
Liu, Ming
Liu, Shuwan
Liu, Zheng
López-Moreno, Alejandro
Lotfizadeh, Neda
Louie, Janis<M>
Ma, Yue
Maeda, Yutaka
Maekawa, Yuki
Majima, Yuki
Maniwa, Yutaka
Maruyama, Isao
Maruyama, Mina
Maruyama, Shigeo

Maruyama, Takahiro
Matsubara, Manaho
Matsuda, Kazunari
Matsuda, Yuki
Matsumoto, Naoyuki
Matsunaga, Masahiro
Matsuno, Taisuke
Matsuo, Hiroyuki
Matsuo, Yutaka

1-8
1-8
1P-6, 2P-6
1-9, 2P-7, 2P-32
2P-8
2-3
2P-30, 3P-29, 3P-31,
3P-33
3-9
2-7
3P-30
1P-3, 1P-11
3-7, 3P-21
1-8
1P-11, 2P-1
1P-18
1-8
1-8

1P-12
3P-2
2P-9
3P-36
2P-5, 2P-30, 2P-31,
3P-29, 3P-31, 3P-33
3P-26
1-11, 1P-29, 2P-33,
3P-32
1P-19, 1P-21, 1P-23,
2-7, 2P-17, 3-1,
3-7, 3P-19, 3P-21
1P-34, 2P-24, 3P-22,
3P-24
1P-35
1P-33, 2P-11, 3-6,
3P-7
2-6
2P-22
1P-8
2P-5
1P-13
1P-12, 2-7, 2P-17,
3-1

Matsuoka, Hideki
Matsuoka, Hirofumi
Minamimoto, Hiro
Mitsuhara, Masatoshi
Miyamato, Reona
Miyamoto, Dai
Miyata, Yasumitsu
Miyauchi, Yuhei
Mizutani, Ken
Mochizuki, Yuta
Morimoto, Takahiro
Morisawa, Yusuke
Morita, Hiroki
Moriyama, Hiroshi
Motomiya, Kenichi
Mouri, Shinichiro
Mukai, Ken
Murakoshi, Kei
Murata, Yasujiro<N>
Nagai, Ryo
Nagamine, Fumiya
Nagase, Sigeru
Nagata, Masataka
Nakagawa, Rei
Nakahara, Hitoshi
Nakai, Yusuke
Nakajima, Hideaki
Nakajima, Makoto
Nakandakari, Sho
Nakanishi, Yusuke
Nakano, Akio
Nakano, Masaki
Nakano, Takayuki
Nakashima, Naotoshi
Naritsuka, Shigeya
Nihey, Fumiyuki
Niidome, Yoshiaki
Nishi, Ryohei
Nishida, Tetsuo
Nishidome, Hiroyuki
Nishihara, Hirotomo- 151 -

3P-36
2P-8, 2P-31
3P-27
2-1
1-12
2P-36
2P-30, 2P-31, 3P-7,
3P-29, 3P-31, 3P-33
2-4, 3-6, 3P-7
1P-19
1P-4, 1P-24, 1P-25
1-6, 1P-3, 2-2
2P-35
3P-12
1P-12
2P-3
2P-25
1-6
3P-27
3P-1

1P-22
1P-20
3P-2
1P-11
2P-21
1-5
2P-5
1-2, 1P-3, 2-2
2P-13
2-1
1P-11, 2P-1
3P-23
3P-36
2P-18, 2P-20
1P-14
2P-24, 2P-25, 3P-22,
3P-24
2P-23
1P-10
3P-3
2P-3
1P-29
1-10, 2P-27

Nishihara, Taishi
Nishikawa, Tomohiro
Nishimura, Tomoaki
Nishio, Yuya
Nitta, Toshihito
Noda, Suguru
Nomura, Keita
Nonoguchi, Yoshiyuki
Nouchi, Ryo
Nozaki, Junji
Nugraha, Ahmad R. T.
<O>Obata, Yoshinori
Ogata, Hironori
Ogawa, Yui
Ogino, Naoko
Ogura, Noritada
Ogura, Tomohiro
Ohfuchi, Mari
Ohigashi, Yuta
Ohno, Yutaka

2-4
3P-20
3P-26
2P-4
3P-35
1P-6, 2P-6, 2P-21
1-10, 2P-27
1S-3, 2P-2
1-7
1P-29
1P-1, 3P-28

Okigawa, Yuki
Okita, Wakana
Okubo, Hitomi
Omachi, Haruka
Onishi, Takatsugu
Ono, Taishi
Otsuka, Keigo
Ozaki, Kazunori<P>
Pander, Adam
Park, Ellne

1P-20, 2P-13, 3P-10
2P-1

Okada, Takuya
Okazaki, Toshiya

1P-27, 2P-12
3P-11
3P-9
2P-8, 2P-31, 3P-30<Q>
Qian, Yang
Qu, Ting-Yu

3-7,
3-3

<S>
Saida, Takahiro
Saito, Riichiro

3P-26
1P-22
1P-28
1P-36, 2P-34
3P-25
2P-8
3S-9
3P-36
1P-8, 2P-4, 2P-19,
3S-7, 3P-3, 3P-4,
3P-17
1P-12
3P-8
2P-30, 3P-8
1P-32
1-11, 1P-29, 1P-35,
2P-16, 2P-33, 3P-32
3P-22
1-2, 1-6, 1P-3,
2-2
2-2
1P-2, 2P-7
3P-16
3P-9
1P-20, 3P-10
2P-24
1P-21
2P-35

Okada, Hiroshi
Okada, Mitsuhiro
Okada, Naoya
Okada, Ryotaro
Okada, Susumu

Park, Jaehong
Pratama, Fenda Rizky
Prato, Maurizio
Pu, Jiang

3P-21

3P-22
1P-1, 1P-15, 2P-26,
2P-29, 3P-11, 3P-28
3-8
Saito, Susumu
3P-7
Saito, Tetsuki
1-5
Saito, Yahachi
3P-36
Sakano, Masato
2P-8
Sakanoue, Tomo
1P-26, 2P-28
Sano, Masahito
2P-9, 2P-10
Sasaoka, Kenji
2P-5
Sato, Sota
3P-20
Sato, Tohru
1P-6, 2P-6, 2P-21
Sato, Toshihiro
2P-3Sato, Yoshinori
Sato, Yoshinori (Stella Chemifa Corp.) 2P-3
3P-32
Sawahata, Hisaki
1P-16, 3-2
Sekiguchi, Atsuko
1S-2
Senga, Ryosuke
1P-34, 3P-22
Sharma, Kamal Prasad
2P-17
Shawky, Ahmed
1P-14
Shiga, Tamehito
2P-30
Shigekawa, Hidemi
3P-5
Shima, Takuya
2P-19
Shimaoka, Keiichi
3P-7
Shimasaki, Masafumi
3P-17
Shimasaki, Yuto
3P-31
Shimizu, Hiroshi
3-5
Shimizu, Maki
2P-14
Shimizu, Taiyo
3P-6
Shimura, Eriko
1-10
Shimura, Tomoya
1P-5, 1P-11, 2P-1,
Shinohara, Hisanori
3P-9
3P-19
Shiomi, Junichiro
1P-9, 1P-10, 1P-14
Shiraki, Tomohiro- 152 -

Shirakura, Toshiya
Shukla, Shivani
Slam, Celine
Souda, Kohei
Suda, Yoshiyuki
Suenaga, Kazu
Sugai, Toshiki
Sugime, Hisashi
Sugita, Tomoko
Sun, Dongming
Sun, Yun
Sundaram, Rajyashree
Sunnarionto, Gagus
Suzuki, Hal
Suzuki, Hiroo
Suzuki, Masashi
Suzuki, Tomoko
Syrgiannis, Zois
Szczepaniak, Urszula<T>
Tachi, Suzuka
Tadokoro, Yukihiro
Tajima, Naoko
Takada, Tomoya
Takaguchi, Yuhei
Takai, Kazuyuki
Takai, Ryoya
Takakura, Akira
Takakuwa, Seisyu
Takano, Keisuke
Takei, Kuniharu
Takenaka, Shun
Takenobu, Taishi
Takeuchi, Osamu
Takikawa, Hirofumi
Tanaka, Hiroya
Tanaka, Koichiro
Tanaka, Shunsuke
Tanaka, Takeshi
Tanemura, Masaki
Tanigaki, Katsumi
Taniguchi, Takashi

2P-36
Tanimoto, Tsuyoshi
1P-28
Taniyasu, Yoshitaka
Taslim, Alexandre Budiman 1P-3
1P-36, 2P-34
Tayyebi, Ahmad
1P-6
Temeche, Eleni
2P-8
Tempia, Juliette
1-12
Terada, Natsuki
2P-3
Tohji, Kazuyuki
2P-23
Toyama, Kiyohiko
3-8
Toyoda, Masayuki
1-8
Tsuchikawa, Ryuichi
2P-15
Tsukuda, Masaaki
3-5
Tsurugaya, Takuma
2-5
Tsuzuki, Mayumi
3P-30
Tu, Chien-Liang
3P-28
Tuan, Hung Nguyen

2P-29
1P-11
1-8
2P-25
2P-36
1P-3, 1P-11, 2P-1
1-12, 3P-6, 3P-12
1P-6, 2P-6, 2P-21
2-5
3-3
3-3
3-2
3P-26
2P-35
1P-2, 3P-25
2P-36
3P-22
3P-9
2P-35

3P-12
2P-19
1-6
1P-17
2P-31
1P-30, 3P-26
3P-15
2-4
1P-17
2P-13
1P-4, 1P-24, 1P-25,
3P-34
3P-24
2P-8, 2P-31, 3P-30
2P-30
2P-36
2P-19
1P-29
3-4
1-1, 1P-7, 2-5,
2S-4
1P-34
2-6
1P-5, 2P-30<U>
Uchida, Yuki
Uchimura, Masanobu
Uchiyama, Fumiaki
Uchiyama, Kouya
Uda, Takushi
Ueda, Naomasa
Ueda, Yuki
Ueno, Hiroshi
Ueno, Keiji
Ukhtary, M. Shoufie
Umeda, Yoshito
Umeyama, Tomokazu

1P-3, 2-1
2P-27
1-12
1P-12
3-4
1P-23
2P-24, 2P-25, 3P-24
1P-12
1P-5, 1P-29
2P-26, 3P-11
2P-36
1-4, 1P-27<W>
Wada, Momoyo
Wakabayashi, Tomonari
Wang, Guowei
Wang, Yue
Watanabe, Kenji
Watanabe, Takayuki
Watanabe, Yuhdai

1-1
2P-35
1P-7, 2-5
3P-36
1P-5, 2P-30
1-6
1-5

<X>
Xiang, Rong
Xu, Bin- 153 -

1P-21, 1P-23, 3-7,
3P-21
3P-5

<Y>
Yagi, Takashi
Yajima, Fumiaki
Yamada, Hiroki
Yamada, Hiroko
Yamada, Jumpei
Yamada, Michio
Yamada, Ryohei
Yamada, Takatoshi
Yamada, Takeo
Yamada, Tomoyuki
Yamaguchi, Yoshiki
Yamamoto, Masanori
Yamamoto, Masashi
Yamamoto, ShunYamamoto, Takahiro

Yoneyama, Kazufumi
Yoshida, Akari
Yoshida, Kenji
Yoshida, Satoshi
Yoshida, Shoji
Yoshida, ShunYoshikawa, Daiki
Yoshikawa, Hirofumi
Yoshimoto, Yuta
Yoshimura, Shintaro
Yu, Boda
Yudasaka, Masako
Yuge, Ryota

1P-13
3-5
1P-27
3-10
2P-24, 3P-24
3P-2
1P-19
2-2
1P-16, 2P-14, 3-2
2P-8
2P-7
2P-27
2P-3
1P-21
2P-9, 2P-10, 2P-15,
3P-18
2-1
1P-13, 1P-29, 1P-31,
1P-32, 3P-16
2-3
1-2
2P-3
1P-13, 1P-29, 1P-31,
1P-32, 3P-16
2P-16
3P-16
3-5
3P-36
2P-30
3P-14
1P-24, 1P-25, 3P-34
3P-9
3P-19
3P-33
1P-9
1S-1, 1-2, 2P-23
2P-23

<Z>
Zhang, Jinjiang
Zhang, Minfang
Zhang, Wenjin
Zhao, PeiZhao, Xiang

3P-27
1-2
3-6
3P-2
3P-2

Yamasaki, Shigeto
Yanagi, Kazuhiro
Yang, FengYang, Mei
Yokoyama, Koji
Yomogida, Yohei

Zheng, Yongjia
Zhou, Ruifeng
Zolotoukhna, Tatiana- 154 -

3-7, 3P-21
3P-27
3P-35

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2018 年 9 月 11 日発行

第 55 回フラーレン・ナノチューブ・グラフェン総合シンポジウム
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印刷 / 製本 （株）創志企画

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