第 49 回
フラーレン・ナノチューブ・グラフェン
総合シンポジウム
The 49th Fullerenes-Nanotubes-Graphene
General Symposium

講演要旨集
Abstracts
主催

2015 年 9 月 7 日（月）～ 9 日（水）北九州国際会議場
Kitakyushu International Conference Center

フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society

共催
日本化学会

The Chemical Society of JapanF NTG

Research Society
協賛
日本物理学会
The Physical Society of Japan
応用物理学会
The Japan Society of Applied Physics
高分子学会
The Society of Polymer Science, Japan
電気化学会
The Electrochemical Society of Japan
北九州市
City of Kitakyushu
文部科学省 新学術領域研究 π造形科学 π-System Figuration (MEXT)
九州大学 分子・物資合成プラットフォーム Kyushu Univ. Nanotechnology Platform
文部科学省 新学術領域研究 原子層科学 Science of Atomic Layers (MEXT)

Abstract of
The 49th Fullerenes-Nanotubes-Graphene General Symposium
Sponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of Japan
Supported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan
City of Kitakyushu
π-System Figuration (Grant-in-Aid for Scientific Research on
Innovative Areas, MEXT)
Kyushu University Nanotechnology Platform
Science of Atomic Layers (Grant-in-Aid for Scientific Research on
Innovative Areas, MEXT)

Date : September 7th (Mon.) – 9th (Wed.), 2015
Place : Kitakyushu International Conference Center

3-9-30 Asano, Kokurakita-ku, Kitakyushu-shi, Fukuoka 802-0001

Presentation Time : Plenary Lecture (40 min presentation + 5 min discussion)Special Lecture (25 min presentation + 5 min discussion)
General Lecture (10 min presentation + 5 min discussion)
Poster Preview (1 min presentation without discussion)

第 49 回フラーレン･ナノチューブ･グラフェン総合シンポジウム
講演要旨集
主催 : フラーレン･ナノチューブ･グラフェン学会
共催 : 日本化学会
協賛 : 日本物理学会、応用物理学会、高分子学会、電気化学会、北九州市、
文部科学省 新学術領域研究 π造形科学、九州大学 分子・物資合成プラット
フォーム、文部科学省 新学術領域研究 原子層科学
日時 : 平成 27 年 9 月 7 日(月)～9 日(水)場所 : 北九州国際会議場〒802-0001 福岡県北九州市小倉北区浅野 3 丁目 9-30
発表時間 : 基調講演
（発表 40 分 + 質疑応答 5 分）
特別講演
（発表 25 分 + 質疑応答 5 分）
一般講演
（発表 10 分 + 質疑応答 5 分）
ポスタープレビュー （発表 1 分・質疑応答 なし）

展示団体御芳名 (五十音順、 敬称略）
IOP英国物理学会出版局
九州大学 分子・物質合成プラットフォーム（株）島津製作所（株）シンキー（株）セントラル科学貿易
ナカライテスク（株）
ナノフォトン（株）
日本電子（株）（株）ニューメタルスエンドケミカルスコーポレーション(株）名城ナノカーボン
レニショー(株）ワケンビーテック(株）広告掲載団体御芳名 (五十音順、 敬称略）
WITec(株）関東化学(株）サンケイ化学薬品（株）
シグマアルドリッチジャパン（同）シュレーディンガー（株）（株）新興精機
正晃（株）（株）セントラル科学貿易
ナカライテスク（株）（株）ニコンインステック九州支店
日本カンタム・デザイン（株）
日本電子（株）日本分光（株）日立工機（株）
フロンティアカーボン（株）（株）名城ナノカーボン

Contents
Time Table ・・・・・・・・・・・・・・・・・・ i
Chairperson ・・・・・・・・・・・・・・・・・iii
ProgramJapanese ・・・・・・・・・・・・ iv
English ・・・・・・・・・・・ xviii
Abstracts
Plenary Lecture & Special Lecture ・・ 1
General Lecture ・・・・・・・・・ 10
Poster Preview ・・・・・・・・・・44
Author Index ・・・・・・・・・・・・・・・・151

目次
早見表 ・・・・・・・・・・・・・・・・・・・ i
座長一覧・・・・・・・・・・・・・・・・・・・iii
プログラム 和文・・・・・・・・・・・・・・・ iv
英文・・・・・・・・・・・・・・xviii
講演予稿
基調講演＆特別講演・・・・・・・・ 1
一般講演・・・・・・・・・・・・・10
ポスター発表・・・・・・・・・・・44
発表索引・・・・・・・・・・・・・・・・・・ 151

プログラム早見表
9月7日 （月）9月8日 （火）9月9日 （水）受付開始 ８：３０～

受付開始 ８：３０～
講演開始 ９：００～

受付開始 ８：３０～
講演開始 ９：００～

講演開始 ９：３０～

9:00

9:30

基調講演（Rodney S. Ruoff)
9:30-10:15

9:45

10:15

一般講演 3件（グラフェンの生成)
10:15-11：00
休憩 11:00-11：15
特別講演（Esko I. Kauppinen)
11：15-11：45
一般講演 3件 11：45-12：30(ナノチューブの生成と精製・
ナノチューブの応用)
昼食(幹事会）
12:30-13：45

11:00
11:15
11:45

12:30

13:45

特別講演(齋藤 弥八)
13:45-14：15
14:15 一般講演 3件 14：15-15：00(ナノチューブの物性
・内包ナノチューブ)
15:00 一般講演 2件 15：00-15：30(ナノチューブの応用・グラフェンの応用)

15:30
15:45

16:30

17:10

休憩 15:30-15:45
一般講演 3件(フラーレン）
15：45-16：30
ポスタープレビュー( 1P-1～1P-35 )16：30-17：10
ポスターセッション（イベントホール）
17：10-18：40

基調講演（Zhongfan Liu）
9:00-9:45
一般講演 4件(グラフェンの物性・原子層）
9：45-10：45

9:00
9:30

10:15
10:45
11:00

12:00

休憩 10：45-11：00
一般講演3件（飯島賞受賞対象者講演）
11：00-12：00

10:45
11:00
11:30

昼食
12:00-13:15
12:30

13:15 若手奨励賞表彰式13：15-13：30
13:30
総会
13：30-14：00
14:00
特別講演（冨永 昌人）
14：00-14：30
14:30
ポスタープレビュー( 2P-1～2P-35 )14：30-15：10
15:10
ポスターセッション（イベントホール）
15：10-16：40

13:45
14:15

15:00
15:15

15:55

17:10
17:30

18:40
19:00

バス出発
見学
（門司港レトロ地区）
17：30-18：40
懇親会（門司港ホテル）
19:00-21:00

21:00

i
i

特別講演 (大澤 映二)
9:00-9:30
一般講演 3件(フラーレンの化学）
9:30-10：15
一般講演 2件 10：15-10：45(ナノチューブの応用）
休憩 10：45-11：00
特別講演(粟野 祐二)
11：00-11：30
一般講演 4件(ナノチューブの応用・
グラフェンの応用）
11：30-12：30
昼食
12：30-13：45

特別講演(柳 和宏)
13：45-14：15
一般講演 3件(ナノチューブの物性）
14：15-15：00
休憩 15:00-15:15
ポスタープレビュー( 3P-1～3P-36 )15：15-15：55
ポスターセッション（イベントホール）
15：55-17：25

17:25
基調講演
発表４０分・質疑５分
特別講演
発表２５分・質疑５分
一般講演
発表１０分・質疑５分
賞対象講演 発表10分・質疑10分
ﾎﾟｽﾀｰﾌﾟﾚﾋﾞｭｰ 発表１分・質疑なし

Time table

9:30

September 7 (Mon.)

September 8 （Tue.）

September 9 （Wed.）

Registration begins at 8:30

Registration begins at 8:30

Registration begins at 8:30

Lectures begin at 9:00

Lectures begin at 9:00

Lectures begin at 9:30

9:00

Plenary Lecture（Zhongfan Liu） 9:00-9:45

Plenary Lecture（Rodney S. Ruoff) 9:30-10:15

9:45

General Lectures [4](Properties of graphene・
Atomic Layers）
9：45-10：45

10:15

General Lectures [3]（Graphene synthesis)
10:15-11：00

11:00
11:15

Coffee Break 11:00-11：15
Special Lecture

9:30

10:45
11:00

11：00-12：00
12:00

Applications of nanotubes)

13:45
14:15

15:00

15:30
15:45

16:30

17:10

18:40

10:45
11:00
11:30

General Lectures [3](Formation and purification of nanotubes・

12:30

Coffee Break 10：45-11：00
General Lectures [3]10:15(Lectures of Iijima Award Nominees)（Esko I. Kauppinen) 11：15-11：45

11:45

9:00

Lunch
12:00-13:15

11：45-12：30
Lunch(Administrative Meeting)
12:30-13：45

Special Lecture(Yahachi Saito) 13:45-14：15
General Lectures [3](Properties of nanotubes・Endohedral nanotubes)
14：15-15：00
General Lectures [2](Applications of nanotubes・Applications of graphene)
15：00-15：30
Coffee Break 15:30-15:45
General Lectures [3](Fullerenes）
15：45-16：30
Poster Preview( 1P-1～1P-35 )16：30-17：10
Poster Session(Event Hall)
17：10-18：40

12:30

13:15 Award Ceremony 13：15-13：30
13:30
General Meeting
13：30-14：00
14:00
Special Lecture（Masato Tominaga） 14：00-14：30

14:30

15:10

Poster Preview( 2P-1～ 2P-35)
14：30-15：10
Poster Session(Event Hall)
15：10-16：40

17:10 Departure of the chartered bus
17:30
Site Visit(Mojiko Retro Area)
17：30-18：40
19:00
Banquet(Mojiko Hotel)
19:00-21:00
21:00

ii
ii

Special Lecture(Eiji Osawa) 9:00-9:30
General Lectures [3](Chemistry of fullerenes）
9:30-10：15
General Lectures [2](Applications of nanotubes）
10：15-10：45
Coffee Break 10：45-11：00
Special Lecture(Yuji Awano) 11：00-11：30
General Lectures [4](Applications of nanotubes・Applications of graphene）
11：30-12：30
Lunch
12：30-13：45

13:45

Special Lecture(Kazuhiro Yanagi) 13：45-14：15
14:15
General Lectures [3](Properties of nanotubes）
14：15-15：00

15:00
15:15

Coffee Break 15:00-15:15
Poster Preview(3P-1 ～3P-36 )15：15-15：55

15:55

Poster Session(Event Hall)
15：55-17：25

17:25
Plenary Lecture: 40 min (Presentation) + 5 min (Discussion)Special Lecture: 25 min (Presentation) + 5 min (Discussion)
General Lecture: 10 min (Presentation) + 5 min (Discussion)Award Nominee Lecture : 10 min (Presentation)+ 10 min (Discussion)
Poster Preview: 1 min (Presentation)

座長一覧 (Chairpersons)
9月7日(月）セッション
基調講演（Rodney S. Ruoff)
一般講演
特別講演（Esko I. Kauppinen)
一般講演
特別講演 (齋藤 弥八)
一般講演
一般講演
一般講演
ポスタープレビュー

(敬称略）

時
間
9:30 ～10:15
10:15 ～11:00
11:15 ～ 11:45
11:45 ～ 12:30
13:45 ～ 14:15
14:15 ～ 15:00
15:00 ～ 15:30
15:45 ～ 16:30
16:30 ～ 17:10

座
中嶋
吾郷
大野
千足
野田
佐野
秋田
宮田
根岸

長
直敏
浩樹
雄高
昇平
優
正人
成司
耕充
良太

時
間
9:00 ～ 9:45
9:45 ～10:45
11:00 ～ 12:00
14:00 ～ 14:30
14:30 ～ 15:10

座
長
丸山 茂夫
斎藤 晋
岡田 晋
宮内 雄平
白木 智丈

時
間
9:00 ～ 9:30
9:30 ～ 10:15
10:15 ～ 10:45
11:00 ～ 11:30
11:30 ～ 12:30
13:45 ～ 14:15
14:15 ～ 15:00
15:15 ～ 15:55

座
長
森山 広思
八田 泰三
加藤 俊顕
松田 一成
齋藤 理一郎
藤ヶ谷 剛彦北浦 良
中西 亮

9月8日（火）セッション
基調講演（Zhongfan Liu）
一般講演
一般講演（受賞対象者）
特別講演（冨永 昌人）
ポスタープレビュー
9月9日（水）セッション
特別講演 (大澤 映二)
一般講演
一般講演
特別講演 (粟野 祐二)
一般講演
特別講演 (柳 和宏)
一般講演
ポスタープレビューiii
iii

９月７日（月）基調講演
発表
質疑応答 ５分
基調講演
発表 ４０分
４０分 ・・ 質疑応答
５分
特別講演
発表
２５分
・
質疑応答 ５分
特別講演
発表 ２５分 ・ 質疑応答
５分
一般講演
発表
質疑応答 ５分
一般講演
発表 １０分
１０分 ・・ 質疑応答
５分
ポスタープレビュー
発表
１分
・
質疑応答
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
なし
基調講演
基調講演 (9:30-10：15)(9:30-10：15)
1S-1
1S-1

Introduction
Introduction toto thethe CMCM,
CMCM, Carbon
Carbon Materials
Materials forfor thethe Future,
Future, andand Some
Some New
New Results
Results
on Graphene
Grapheneon** Rodney
Rodney S.
S. Ruoff
Ruoff

一般講演
一般講演 (10：15-11：00)(10：15-11：00)
グラフェンの生成
グラフェンの生成

11

1-1
1-1

低温プラズマにより合成されたグラフェンの電気的特性
低温プラズマにより合成されたグラフェンの電気的特性
** 山田
山田 貴壽
貴壽 ,, 沖川
沖川 侑揮
侑揮 ,, 石原石原 正統
正統 ,, 加藤加藤 宙光
宙光 ,, 長谷川長谷川 雅考
雅考

10
10

1-2
1-2

Formation
Formation mechanism
mechanism ofof anisotropic
anisotropic cracks
cracks inin graphenegraphene grown
grown onon copper
copper foil
foil** MihoFujihara,
RyosukeInoue,
Rei
Kurita,Toshiyuki
Taniuchi,
Yoshihito
Miho Fujihara, Ryosuke Inoue, Rei Kurita, Toshiyuki Taniuchi, Yoshihito Motoyui,
Motoyui, Shik
Shik
Shin,
Fumio
Komori,YutakaManiwa,Hisanori
Shinohara,
Yasumitsu
MiyataShin, Fumio Komori, Yutaka Maniwa, Hisanori Shinohara, Yasumitsu Miyata

11
11

1-3
1-3

プラズマCVDによる高集積架橋グラフェンナノリボンアレイの大面積合成
プラズマCVDによる高集積架橋グラフェンナノリボンアレイの大面積合成
** 鈴木
鈴木 弘朗
弘朗 ,, 加藤加藤 俊顕
俊顕 ,, 金子
金子 俊郎
俊郎

12
12

＞＞＞＞＞＞＞＞＞＞＞＞＞＞ 休憩
休憩 (11：00-11：15)(11：00-11：15) ＜＜＜＜＜＜＜＜＜＜＜＜＜＜特別講演
特別講演 (11：15-11：45)(11：15-11：45)
1S-2
1S-2

Floating
Floating catalyst
catalyst CVD
CVD synthesis
synthesis ofof non-bundled
non-bundled SWNTs
SWNTs with
with narrow
narrow chiralchiral angle
angle distribution
distribution** EskoEsko I.
I. Kauppinen
Kauppinen

一般講演
一般講演 (11：45-12：30)(11：45-12：30)
ナノチューブの生成と精製・ナノチューブの応用
ナノチューブの生成と精製・ナノチューブの応用

22

1-4
1-4

Relationship
Relationship between
between growth
growth rate
rate andand catalyst
catalyst lifetime
lifetime on
on carbon
carbon nanotube
nanotube forest
forest synthesis
synthesis
** 松本
松本 尚之
尚之 ,, Chen
Chen Guohai,
Guohai, Davis
Davis Robert,
Robert, 木村
木村 寛恵
寛恵 ,, 桜井桜井 俊介
俊介 ,, 湯村
湯村 守雄
守雄 ,, フタバ
フタバ
,
畠
賢治
ドン
ドン , 畠 賢治

13
13

1-5
1-5

生体反応を制御可能なカーボンナノチューブ超分子複合体の開発
生体反応を制御可能なカーボンナノチューブ超分子複合体の開発
** 都
都 英次郎
英次郎 ,, チェチェトカ
チェチェトカ スベトラーナ
スベトラーナ ,, 戸井
戸井 基道
基道 ,, 弓場
弓場 英司
英司 ,, 河野
河野 健司
健司

14
14

1-6
1-6

無機塩を用いた有機溶媒へのカーボンナノチューブ分散
無機塩を用いた有機溶媒へのカーボンナノチューブ分散
** 松本
松本 和也
和也 ,, 高橋高橋 拓朗
拓朗 ,, 寺境
寺境 光俊
光俊

15
15

＞＞＞＞＞＞＞＞＞＞＞＞＞＞ 昼食
昼食 (12：30-13：45)(12：30-13：45) ＜＜＜＜＜＜＜＜＜＜＜＜＜＜特別講演
特別講演 (13：45-14：15)(13：45-14：15)
1S-3
1S-3

UniqueUnique properties
properties ofof nanocarbon
nanocarbon materials
materials revealed
revealed byby inin situ
situ TEM
TEM andand FEM
FEM
Yuji
Shinomiya,
NoboruYokoyama,
Koji
Asaka,
HitoshiNakahara,
齋藤弥八
Yuji Shinomiya, Noboru Yokoyama, Koji Asaka, Hitoshi Nakahara, ** 齋藤弥八

iv
iv

33

９月７日（月）基調講演
発表 ４０分 ・ 質疑応答 ５分
一般講演 ( 14：15-15：00)
特別講演
発表 ２５分 ・ 質疑応答 ５分
ナノチューブの物性・内包ナノチューブ
一般講演
発表 １０分 ・ 質疑応答 ５分
1-7
同位体超格子カーボンナノチューブにおける格子振動
ポスタープレビュー
発表 １分 ・ 質疑応答 なし* 斎藤 晋 , 坂東 優樹

16transmission electron microscopy of water encapsulated in single-wall carbon
基調講演Analytical(9:30-10：15)

17

1S-1

1

1-8

1-9

nanotube
Introduction
to the CMCM, Carbon Materials for the Future, and Some New Results*
Keita
Kobayashi,
Ryosuke Kuroiwa, Hidehiro Yasuda
on Graphene* Rodney S. Ruoff
Magnetic properties of nano metals* 塩澤 秀次

一般講演 (10：15-11：00)
グラフェンの生成
一般講演( 15：00-15：30 )1-1
低温プラズマにより合成されたグラフェンの電気的特性
ナノチューブの応用・グラフェンの応用* 山田 貴壽 , 沖川 侑揮 , 石原 正統 , 加藤 宙光 , 長谷川 雅考
1-10
1-2
1-11
1-3

単一構造(9,4)SWCNTを用いた高効率生体イメージング
Formation mechanism of anisotropic cracks in graphene grown on copper foil
蓬田Fujihara,
陽平 , 張Ryosuke
民芳 , Inoue,
湯田坂Rei雅子, 魏Toshiyuki
小均 , 田中丈士Yoshihito, 片浦 弘道**MihoKurita,Taniuchi,Motoyui, Shik
Shin, Fumio Komori, Yutaka Maniwa, Hisanori Shinohara, Yasumitsu Miyata
Graphene Oxide as a Multifunctional Platform for Cell Imaging
Zhenyu Zhang, Qinghai Liu, Juan Yang, * Yan Li
プラズマCVDによる高集積架橋グラフェンナノリボンアレイの大面積合成

18

10
19
11
20
12

* 鈴木 弘朗 , 加藤 俊顕 , 金子 俊郎＞＞＞＞＞＞＞ 休憩 ( 15：30-15：45 ) ＜＜＜＜＜＜＜＞＞＞＞＞＞＞ 休憩 (11：00-11：15) ＜＜＜＜＜＜＜一般講演 ( 15：45-16：30 )フラーレン (11：15-11：45)
特別講演
1-12
1S-2

Alkali-metal-doped
fullerenefor ofapplication
to superconducting
wires chiral angle distribution
Floating
catalyst CVD
synthesis
non-bundled
SWNTs with narrow* Hiroyuki Takeya, Toshio Konno, Chika Hirata, Takatsugu Wakahara, Kunich Miyazawa,* Esko I. Kauppinen
Masashi Tanaka, Takahide Yamaguchi, Yoshihiko Takano

212

一般講演 (11：45-12：30)
1-13Singlet oxygen generation from Li+@C60 nano-aggregates dispersed by laser irradiation in
ナノチューブの生成と精製・ナノチューブの応用

22

1-4

13

1-14
1-5

solution
aqueous
Relationshipbetween growth rate and catalyst lifetime on carbon nanotube forest synthesis*
大久保敬, 高野Guohai,
直樹 , Davis
福住 Robert,
俊一 木村 寛恵 , 桜井 俊介 , 湯村 守雄 , フタバ* 松本 尚之 , Chen

ドン , 畠 賢治

Chemical and physical control of superconductivity and magnetism* Yasuhiro Takabayashi, Ruth H. Zadik, Kosmas Prassides
生体反応を制御可能なカーボンナノチューブ超分子複合体の開発

23
14* 都 英次郎 , チェチェトカ スベトラーナ , 戸井 基道 , 弓場 英司 , 河野 健司

ポスタープレビュー ( 16：30-17：10 )ポスターセッション( 17：10-18：40 )（☆） 若手奨励賞候補
1-6
無機塩を用いた有機溶媒へのカーボンナノチューブ分散フラーレンの化学* 松本 和也 , 高橋 拓朗 , 寺境 光俊
1P-1

Regioselectively Arylated Fullerenes by Acid-catalyzed Reaction of Azafulleroids as an
Ambident Base* Naohiko Ikuma, Koichi Fujioka, Yuta Doi, Ken Kokubo, Hidehiro Sakurai, Takumi Oshima

1544＞＞＞＞＞＞＞ 昼食 (12：30-13：45) ＜＜＜＜＜＜＜フラーレンの応用
NMR Studies on the Aggregated Structures of Organic Bulk Heterojunction Solar
特別講演Solid-state(13：45-14：15)

45

1S-3

3

1P-2

Cells with
Solvent ofadditives(III)Uniqueproperties
nanocarbon materials revealed by in situ TEM and FEM
*Yuji
河野
紗希
,
緒方
啓典
Shinomiya, Noboru
Yokoyama, Koji Asaka, Hitoshi Nakahara, * 齋藤弥八

金属内包フラーレン
1P-3☆

A new method for the isolation of the hidden metallofullerenes like Y 2@C80* 中鳥 なつみ , 冨樫 愛美 , 藤田 渉 , 菊地 耕一 , 阿知波 洋次 , 兒玉 健

v
v

46

９月７日（月）基調講演
発表 ４０分 ・ 質疑応答 ５分
特別講演
発表
２５分 ・ 質疑応答
５分
An atlas of thermoelectric powerof semiconducting
carbon nanotubes
発表
１０分トレスナ・ 質疑応答* グエン タン一般講演
フン , アフマド
リドワン
ヌグラハ５分, 齋藤 理一郎
ポスタープレビュー
発表 １分 ・ 質疑応答 なし

ナノチューブの物性
1P-4
☆
1P-5

47

Stability of chemisorbed oxygen on carbon nanotube surface* Gergely Juhasz, Naotoshi Nakashima

48

Introduction to the CMCM, Carbon Materials for the Future, and Some New Results
弱電界下におけるCNT間のポテンシャル異常
onGraphene
石山 佑S., Ruoff岡田 晋** Rodney

149

基調講演 (9:30-10：15)
1S-1
1P-6

一般講演単層カーボンナノチューブにおける熱電物性のカイラリティ依存性(10：15-11：00)* 大島 侑己 , 北村 典雅 , 河合 英輝 , 真庭 豊 , 柳 和宏
グラフェンの生成

1P-7

50

1-1

低温プラズマにより合成されたグラフェンの電気的特性

10

1P-8

カーボンナノチューブ電極およびその新規ドープ法を利用した金属フリー透過型有機太陽電池
Formation mechanism of anisotropic cracks in graphene grown on copper foil
* 田 日 , Clement Delacou, Esko Kauppinen, 丸山 茂夫 , 松尾 豊
* Miho Fujihara, Ryosuke Inoue, Rei Kurita, Toshiyuki Taniuchi, Yoshihito Motoyui, Shik
Shin,
Fumio Komori, Yutaka Maniwa, Hisanori Shinohara,リチウムイオン電池負極の開発
Yasumitsu Miyata
カーボンナノチューブペーパーでSiナノ粒子を包含した

51

ナノチューブの応用* 山田 貴壽 , 沖川 侑揮 , 石原 正統 , 加藤 宙光 , 長谷川 雅考
1-2
☆
1P-9
☆
1-3
1P-10

* 小輪瀬 敬之 , 長谷川 馨 , 野田 優
プラズマCVDによる高集積架橋グラフェンナノリボンアレイの大面積合成
加藤 俊顕, 金子 electronic
俊郎* 鈴木 弘朗 ,analysis
Computationalof inelastictransport properties in single-walled carbon

11
52
12
53

nanotubes* Keisuke Ishizeki, Kenji Sasaoka, Takahiro Yamamoto＞＞＞＞＞＞＞ 休憩 (11：00-11：15) ＜＜＜＜＜＜＜1P-11ポリビニルスルホン酸被覆カーボンナノチューブ電極触媒の開発* 長嶋 昌代 , 藤ヶ谷 剛彦 , 中嶋 直敏

54

Floating catalyst CVD synthesis of non-bundled SWNTs with narrow chiral angle distribution
単層ナノチューブフィルムを用いた１００℃以上で動作可能なフレキシブル半透明ヒーター* Esko I. Kauppinen* 小林 大起 , 竹井 邦晴 , 有江 隆之 , 秋田 成司

255

特別講演 (11：15-11：45)
1S-2
1P-12

一般講演Ultra-high(11：45-12：30)
1P-13
sensitivity carbon nanotube biosensors based on redox cycle process
ナノチューブの生成と精製・ナノチューブの応用☆
* Takuya Ushiyama, Nguyen Xuan Viet, Shigeru Kishimoto, Yutaka Ohno
1-4
Relationship between growth rate and catalyst lifetime on carbon nanotube forest synthesis* 松本 尚之 , Chen Guohai, Davis Robert, 木村 寛恵 , 桜井 俊介 , 湯村 守雄 , フタバ
1P-14
CNT添加により耐熱性を向上させたフッ素ゴムシーリング材料, 畠 誠介賢治, 臼田 永一 , 水野 貴瑛 , 西澤 あゆみ , 友納 茂樹 , 山田 健郎 ,
ドン
* 阿多
1-5
1P-15
1-6

畠 賢治

生体反応を制御可能なカーボンナノチューブ超分子複合体の開発, チェチェトカ
スベトラーナ, 戸井 基道
, 弓場
英司for
, 河野
健司
* 都 英次郎Highlystable carbon
nanotube/ultrathincross-linked
polymerhybrids
biomedical
applications
無機塩を用いた有機溶媒へのカーボンナノチューブ分散* 堤 優介 , 藤ヶ谷 剛彦 , 中嶋 直敏* 松本 和也 , 高橋 拓朗 , 寺境 光俊

56
13
57
14
58
15

ナノチューブの生成と精製
1P-16

２液相法による金属／半導体単層カーボンナノチューブの精製＞＞＞＞＞＞＞
昼食(12：30-13：45)
石田 諒, 大塚 真凜 , 金澤尚宜
, * 鈴木 信三 ,＜＜＜＜＜＜＜
小野 晶

59

1P-17

高真空アルコールガスソース法によるRh触媒を用いた単層カーボンナノチューブ低温成長

60

1S-3

Unique properties of nanocarbon materials revealed by in situ TEM and FEM
Yuji Shinomiya, Noboru Yokoyama, Koji Asaka, Hitoshi Nakahara, * 齋藤弥八
振電相互作用密度解析に基づく(6,5)ナノチューブキャップの成長機構* 春田 直毅 , 佐藤 徹 , 阿知波 洋次 , 兒玉 健 , 佐藤 啓文 , 城丸 春夫

3

特別講演* (13：45-14：15)
小澤 顕成 , 桐林 星光 , 小川 征悟 , 才田 隆広 , 成塚 重弥 , 丸山 隆浩

1P-18

vi
vi

61

９月７日（月）1P-19☆

基調講演Separation
発表 by
４０分
・ 質疑応答 ５分
Metallic/Semiconducting
Electric-Field-Induced
Layer Formation Method
特別講演
発表
２５分
・
質疑応答
５分
Applied to SWCNTs Purified for Removal of Catalysts
一般講演
発表
１０分
質疑応答
５分 浩幸 , 萬 伸一
* 佐々木 扶紗子
, 二瓶 史行, 桒原有紀・, 斎藤毅 , 遠藤ポスタープレビュー62

発表 １分 ・ 質疑応答 なし

1P-20

パルスプラズマCVDにおけるカイラリティ分布の狭い単層カーボンナノチューブ成長の時間 63
発展カーボンナノチューブペーパーでSiナノ粒子を包含した リチウムイオン電池負極の開発
基調講演 (9:30-10：15)☆
* 許 斌 , 加藤俊顕
, 金子Carbon
俊郎 Materials for the Future, and Some New Results
1
1S-1
Introduction
to theCMCM,
on Graphene
1P-21
64
Selective* Rodneysynthesis
S. Ruoff of single-walled carbon nanotubes using sputtered W/Co☆
* 安 華 , 項 榮 , 井ノ上 泰輝 , 千足 昇平 , 丸山 茂夫

一般講演 (10：15-11：00)
ナノホーン
グラフェンの生成

1P-22
1-1

繊維状カーボンナノホーン集合体の作製と評価
低温プラズマにより合成されたグラフェンの電気的特性
雅子
** 弓削
山田 亮太
貴壽 ,, 二瓶沖川 史行
侑揮 ,, 當山石原 清彦
正統 ,, 湯田坂
加藤 宙光
, 長谷川 雅考65
10グラフェン生成1-2Formation mechanism of anisotropic cracks in graphene grown on copper foil

1P-23

グラファイト層間化合物の電気化学剥離における高分子分散剤の効果* Miho Fujihara, Ryosuke Inoue, Rei Kurita, Toshiyuki Taniuchi, Yoshihito Motoyui, Shik泰長
, 沖本 Yutaka
治哉 , Maniwa,
佐野 正人
* 丹野
Shin,
Fumio
Komori,
Hisanori Shinohara, Yasumitsu Miyata

11
66

1P-24
1-3
☆

金属融解転写によるCVDグラフェン/BNヘテロ構造の作製
プラズマCVDによる高集積架橋グラフェンナノリボンアレイの大面積合成** 井上, 真庭 豊 , 宮田 耕充
鈴木 凌介
弘朗,, 渡邊加藤 賢司
俊顕,, 谷口
金子 尚
俊郎

67
12

グラフェンの応用
1P-25

グラフェンエッチング反応の結晶成長速度論を用いた解析＞＞＞＞＞＞＞ 休憩 (11：00-11：15) ＜＜＜＜＜＜＜* 渡辺 優人 , 池村 裕輔 , 佐野 正人

グラフェンの物性
特別講演(11：15-11：45)

1P-26
1S-2

磁場中におけるグラフェンのラマン分光
Floating
catalyst CVD synthesis of non-bundled SWNTs with narrow chiral angle distribution
白倉, 齋藤 理一郎** Esko I.俊哉
Kauppinen

1P-27
一般講演黒リンの原子層物質の光学特性(11：45-12：30)☆
* 中村 隆 , 小澤 大知 , 毛利 真一郎 , 松田 一成

68

69
2
70

ナノチューブの生成と精製・ナノチューブの応用

1-4
1P-28
☆

Relationship between growth rate and catalyst lifetime on carbon nanotube forest synthesis
h-BNシートに埋め込まれたグラフェンドットの磁性* 松本 尚之 , Chen Guohai, Davis Robert, 木村 寛恵 , 桜井 俊介 , 湯村 守雄 , フタバ* 丸山実那, 岡田 晋, 畠 賢治ドン

ナノ炭素粒子1-5
生体反応を制御可能なカーボンナノチューブ超分子複合体の開発
1P-29
A durable Pt electrocatalyst supported on a polybenzimidazole wrapped 3D nanoporous* 都 英次郎 , チェチェトカ スベトラーナ , 戸井 基道 , 弓場 英司 , 河野 健司
carbon shows a high fuel cell performance*無機塩を用いた有機溶媒へのカーボンナノチューブ分散
Zehui Yang, Tomohiro Shiraki, Isamu Moriguchi, Naotoshi Nakashima
1-6
1P-30

原子層

* 松本 和也 , 高橋 拓朗 , 寺境 光俊
酸化グラフェン担持鉄触媒によるカーボンナノポットの生成* 横井 裕之 , 畠山 一翔 , 鯉沼 陸央 , 谷口 貴章 , 松本 泰道

13
71

14
72
15
73

＞＞＞＞＞＞＞ 昼食 (12：30-13：45) ＜＜＜＜＜＜＜Bound Exciton Emission in Photoluminescence Spectrum of Monolayer WSe2
N.Baizura Mohamed, Feijiu Wang, Shinichiro Mouri, Koirala Sandhaya, Yuhei Miyauchi,
特別講演* (13：45-14：15)
Kazunari
Matsudaof nanocarbon materials revealed by in situ TEM and FEM
1S-3
Uniqueproperties

74

1P-32

Yuji Shinomiya, Noboru Yokoyama, Koji Asaka, Hitoshi Nakahara, * 齋藤弥八
In-situ electrochemical Raman Spectroscopic Studies of MoS2 grown on Au(111)* 髙橋 諒丞 , 熊谷 諒太 , 保田 諭 , 村越 敬

75

1P-33
☆

First-principles study of the morphology of MoS2 on Al2O3(0001)* Hideyuki Jippo, Kenjiro Hayashi, Shintaro Sato, Mari Ohfuchi

1P-31
☆

vii
vii

3

76

９月７日（月）
その他
1P-34

基調講演
発表 ４０分 ・ 質疑応答 ５分
特別講演
発表 ２５分 ・ 質疑応答 ５分
赤色領域に高い分光感度を持つ酸化鉄ナノチューブ薄膜の作製と光電変換素子への応用
一般講演
発表 １０分 ・ 質疑応答 ５分
冨安 拓也 , 坂東 俊治 発表 １分 ・ 質疑応答 なし* 小杉 優太 ,ポスタープレビュー

77

1P-35

ナノカーボン微小電子源の作製と輝度評価

78

1S-1

Introduction to the CMCM, Carbon Materials for the Future, and Some New Results
on Graphene* Rodney S. Ruoff

1

基調講演 *(9:30-10：15)
中原 仁 , 伊藤 真一 , 齋藤 弥八

一般講演 (10：15-11：00)
グラフェンの生成
1-1

低温プラズマにより合成されたグラフェンの電気的特性* 山田 貴壽 , 沖川 侑揮 , 石原 正統 , 加藤 宙光 , 長谷川 雅考

10

1-2

Formation mechanism of anisotropic cracks in graphene grown on copper foil
* Miho Fujihara, Ryosuke Inoue, Rei Kurita, Toshiyuki Taniuchi, Yoshihito Motoyui, Shik
Shin, Fumio Komori, Yutaka Maniwa, Hisanori Shinohara, Yasumitsu Miyata

11

1-3

プラズマCVDによる高集積架橋グラフェンナノリボンアレイの大面積合成* 鈴木 弘朗 , 加藤 俊顕 , 金子 俊郎

12＞＞＞＞＞＞＞ 休憩 (11：00-11：15) ＜＜＜＜＜＜＜特別講演 (11：15-11：45)
1S-2

Floating catalyst CVD synthesis of non-bundled SWNTs with narrow chiral angle distribution* Esko I. Kauppinen2

一般講演 (11：45-12：30)
ナノチューブの生成と精製・ナノチューブの応用
1-4

Relationship between growth rate and catalyst lifetime on carbon nanotube forest synthesis* 松本 尚之 , Chen Guohai, Davis Robert, 木村 寛恵 , 桜井 俊介 , 湯村 守雄 , フタバ
ドン , 畠 賢治

13

1-5

生体反応を制御可能なカーボンナノチューブ超分子複合体の開発* 都 英次郎 , チェチェトカ スベトラーナ , 戸井 基道 , 弓場 英司 , 河野 健司

14

1-6

無機塩を用いた有機溶媒へのカーボンナノチューブ分散* 松本 和也 , 高橋 拓朗 , 寺境 光俊

15＞＞＞＞＞＞＞ 昼食 (12：30-13：45) ＜＜＜＜＜＜＜特別講演 (13：45-14：15)
1S-3

Unique properties of nanocarbon materials revealed by in situ TEM and FEM
Yuji Shinomiya, Noboru Yokoyama, Koji Asaka, Hitoshi Nakahara, * 齋藤弥八

viii
viii

3

９月８日（火）基調講演
発表 ４０分 ・ 質疑応答 ５分
特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
飯島賞受賞対象者講演
発表 10分 ・ 質疑応答 10分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
基調講演 (9:00-9:45)
2S-4

Graphene and beyond: Attraction, Reality and Future* Zhongfan Liu

4

一般講演 (9：45-10：45)
グラフェンの物性・原子層2-1

全反射条件におけるグラフェンの電磁波吸収* 齋藤 理一郎 , Cole Reynolds, Shoufie Ukhtary

24

2-2

h-BNナノリボンのエネルギー論と電子状態* 山中 綾香 , 岡田 晋

25

2-3

電荷・電場変調下における単層WSe2の電流励起発光* 蒲 江 , Chu Leiqiang, Li Lain-Jong, 坂上 知 , 江田 剛輝 , 竹延 大志

26

2-4

二次元結晶の相制御* 吉田 将郎 , 鈴木 龍二 , 張 奕勁 , 中野 匡規 , 岩佐 義宏

27＞＞＞＞＞＞＞ 休憩 ( 10：45-11：00 ) ＜＜＜＜＜＜＜飯島賞受賞対象者講演 (11:00-12:00)
2-5

円二色性スペクトルを用いた、SWCNTの励起子バンド構造の直接解析* 魏 小均 , 都築 真由美 , 平川 琢也 , 蓬田 陽平 , 平野 篤 , 藤井 俊治郎 , 田中 丈
士 , 片浦 弘道

282-6

On chip monolithic integration of microsupercapacitors with tunable performance* Karolina Laszczyk, Kobashi Kazufumi, Shunsuke Sakurai, Atsuko Sekiguchi, Don Futaba,
Takeo Yamada, Kenji Hata

29

2-7

In-plane TEM investigation on mono- and bi- metallic catalyst for growth of single walledcarbon nanotubes* Rong Xiang, Akihito Kumamoto, Kehang Cui, Hua An, Yang Qian, Taiki Inoue, Shohei
Chiashi, Yuichi Ikuhara, Shigeo Maruyama

30＞＞＞＞＞＞＞ 昼食 (12：00-13：15) ＜＜＜＜＜＜＜若手奨励賞の授賞式 (13：15-13：30)
総会 (13：30-14：00)

ix
ix

９月８日（火）特別講演 (14:00-14:30)
2S-5

Spectroscopic analysis on electrochemical oxidation reaction of single-walled carbon
nanotubes* 冨永 昌人

ポスタープレビュー (14:30-15:10)
ポスターセッション (15:10-16:40)
フラーレンの応用

5（☆） 若手奨励賞候補

2P-1

Preparation of [C60]Fullerene Nanowhiskers-Gold Nanoparticles Composites and Their
Catalytic Activity for Reduction of 4-Nitrophenol* Jeong Won Ko, Jiulong Li, Weon Bae Ko

79

2P-2

O-アセチル化糖置換フラーレンの開発と塗布型有機電界効果トランジスタおよび薄膜太陽電池への応用* 植村 由 , 矢上 晃史 , 吉武 将良 , 村上 勇太 , 西原 佳彦 , 近松 真之 , 水城 圭司 ,

80

☆

八田 泰三

ナノチューブの物性
2P-3☆

カーボンナノチューブの濡れ性における曲率効果* 今立 呼南 , 平原 佳織

81

ナノチューブの応用
2P-4

カーボンナノチューブを用いた燃料電池カソード触媒の活性及び耐久性評価* 内堀 揚介 , 古谷 アトム , 保田 諭 , 村越 敬

82

2P-5

ステロイドタイプ界面活性剤修飾カーボンナノチューブ界面におけるラッカーゼ触媒高電位
酸素還元* 佐々木 愛子 , 戸上 純 , 冨永 昌人

83

2P-6
☆

Application of diameter-tunable single-walled carbon nanotubes to CNT-silicon solar cells* Yang Qian, Kehang Cui, Rong Xiang, Shohei Chiashi, Shigeo Maruyama

84

2P-7

Carbon Nanotube Thin-Film Transistor for Flexible Biosensor Applications* X. Viet Nguyen, Shigeru Kishimoto, Yutaka Ohno

85

2P-8

Temperature dependence on the synthesis of Pt nanoclusters on polybenzoimidazole-wrappedcarbon nanotubes for use in oxygen reduction reaction catalyst* Yuki Hamasaki, Tsuyohiko Fujigaya, Naotoshi Nakashima86☆

ナノチューブの生成と精製
2P-9☆

Al箔上へのCNT垂直配向膜のサブミリメータスケール成長* 吉原 悠 , 長谷川 馨 , 野田 優

87

2P-10

(6,5)単層カーボンナノチューブエナンチオマーの大量分離* 田中 丈士 , 平川 琢也 , 魏 小均 , 蓬田 陽平 , 平野 篤 , 藤井 俊治郎 , 片浦 弘道

88

2P-11
☆

Synthesis and characterization of SWNTs from activated nanotube edges* Hiroki Takezaki, Keigo Otsuka, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama

89

2P-12

磁場による単層カーボンナノチューブの直径およびカイラリティ制御* 高嶋 泰正 , 浜崎 亜富 , 内村 仁 , 坂口 あゆみ , 尾関 寿美男

90

x
x

９月８日（火）2P-13

リボフラビンによる単層カーボンナノチューブの可溶化と温度依存性の解析* 石丸 航 , 利光 史行 , 中嶋 直敏

91

内包ナノチューブ
2P-14

単分子磁石内包カーボンナノチューブの創製と評価
アフマド ヤトゥー ムダシル , * 中西 亮 , 加藤 恵一 , 斎藤 毅 , 山下 正廣

92

2P-15
☆

Metalorganic chains assambled inside single-wall carbon nanotubes* Oleg Domanov, Markus Sauer, Michael Eisterer, Takashi Saito, Herwig Peterlik, Thomas
Pichler, Hidetsugu Shiozawa

93

グラフェン生成2P-162層グラフェンの作製と電気特性* 星野 崚 , 林 佑太郎 , 鈴木 希 , 今井 健太郎 , 永田 知子 , 岩田 展幸 , 山本 寛

94

2P-17

Au/Ni触媒を用いた高均一な多層グラフェンCVD成長の成長温度依存* 上田 悠貴 , 山田 純平 , 内堀 樹 , 堀部 真史 , 松田 晋一 , 丸山 隆浩 , 成塚 重弥

95

2P-18
☆

Synthetic Studies toward BN-Doped Graphene/Nanographene Using the Borazine Derivatives* Yasuyo Ishio, Haruka Omachi, Ryo Kitaura, Hisanori Shinohara

96

グラフェンの応用
2P-19☆

Residual particles on transferred CVD graphene* 安西 智洋 , 高林 裕也 , 岸本 茂 , 北浦 良 , 篠原 久典 , 大野 雄高

97

グラフェンの物性
2P-20

グラフェンの接合による電子の閉じ込めについて* 井上 裕哉 , 齋藤 理一郎

98

2P-21

pH Dependence of the Electrochemical Reaction of Graphene Oxide Evaluated by SEIRAS* Katsuhiko Nishiyama, Yasuhiro Yoshimura, Yusuke Hayashi, Kazuto Hatakeyama, Michio
Koinuma, Soichiro Yoshimoto, Yasumichi Matsumoto

99

2P-22
☆

Comprehensive Study of Edge-Disordered Graphene Nanoribbons* 高島 健悟 , 山本 貴博

100

2P-23
☆

PN接合を用いた単層WSe2の光電流分光* 木村 祥太 , 小澤 大知 , 藤本 太陽 , 和田 義史 , 蒲 江 , 松木 啓一郎 ,Lain-Jong Li, 竹延 大志

101

2P-24

欠陥および層間距離調整による二層グラフェンの電子構造制御* 岸本 健 , 岡田 晋

102

2P-25

Magnetic properties of graphene flakes connected via sp 3 C atoms* 岡田 晋103

ナノ炭素粒子2P-26

形状とグラファイト構造の異なる炭素ナノ材料の粉末抵抗測定* 須田 善行 , 水井 康平 , 大廣 達郎 , 清水 慶明 , 針谷 達 , 滝川 浩史 , 植 仁志

104

2P-27

カーボンナノバルーンに担持した燃料電池ナノ微粒子の触媒活性評価* 須田 善行 , 大廣 達郎 , 水井 康平 , 針谷 達 , 滝川 浩史 , 植 仁志

105

xi
xi

９月８日（火）2P-28Structure of amorphous carbon deposited on nanometer-seized nickel particles under ultrahigh 106
vacuum at room temperature* Koji Asaka, Yahachi Saito

原子層
2P-29
☆

原子層半導体ヘテロ接合における導電性一次元界面* 小林 佑 , 真庭 豊 , 宮田 耕充

107

2P-30
☆

単層NbドープWS2のCVD成長と評価* 佐々木 将悟 , 小林 佑 , 真庭 豊 , 宮田 耕充

108

2P-31

グラフェン-MoS2の面内ヘテロ構造原子膜* 白土 喜博 , 遠藤 寛子 , 辻 正治 , 日比野 浩樹 , 吾郷 浩樹

109

2P-32
☆

マイルド酸素プラズマによる数層二セレン化タングステンの機能化* 永井 黎人 , 加藤 俊顕 , 高橋 智之 , 金子 俊郎

110

2P-33

Local Optical Absorption Spectra of Transition Metal Dichalcogenide Monolayer by Scanning 111
Near-field Optical Microscopy Measurements
Junji Nozaki, Shohei Mori, Yasumitsu Miyata, Yutaka Maniwa, * Kazuhiro Yanagi

その他
2P-34

The topological and electronic structure of Starfish nanocarbon* Natsuki Namba, Yukihiro Takada, Kyoko Nakada

112

2P-35

Room temperature synthesis of two-dimensional organic framework materials* キム ガヨン , 白木 智丈 , 中嶋 直敏

113

xii
xii

９月９日（水）特別講演
発表 ２５分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし
特別講演 (9:00-9:30)
3S-6

Thirty Years after C60 Discovery and Fifteen Years after Detonation Nanodiamond* 大澤 映二

6

一般講演 (9:30-10:15)
フラーレンの化学
3-1

フラーレン鋳型配位子を用いたコバルト硫黄ナノクラスターの選択的合成* 松尾 豊31

3-2

C60およびC70多付加フラーレンの付加位置選択的合成* 森山 広思 , 内山 幸也 , 五十嵐 望紀 , 渡邉 敬太 , 高橋 晴夏 , 与座 健治

32

3-3

Y2@C82-C3vとLu2@C82-C3vの電子構造* 宮崎 隆文 , 高住 岳 , 八木 創 , 篠原 久典 , 日野 照純

33

一般講演 (10:15-10:45)
ナノチューブの応用
3-4

脳波電極の電気特性に関する層状構造カーボンナノチューブシートの効果* 末松 俊造 , 川本 昂 , 湶 孝介 , 北井 隆平

34

3-5

Robust and Soft Elastomeric Field Effect Transistors Tolerant to Diverse Variety of Applied
Loads* Atsuko Sekiguchi, Fumiaki Tanaka, Shunsuke Sakurai, Don N. Futaba, Takeo Yamada,
Kenji Hata

35＞＞＞＞＞＞＞ 休憩 (10:45-11:00) ＜＜＜＜＜＜＜特別講演 (11:00-11:30)
3S-7

Nano-Carbon Interconnect Technologies for LSIs: Important Considerations of E dge Control* 粟野 祐二

7

一般講演 (11:30-12:30)
ナノチューブの応用・グラフェンの応用
3-6

フレキシブルなインジウムフリーのプラナーヘテロ接合型ペロブスカイト太陽電池：単層カー
ボンナノチューブの応用* 田 日 , 千葉 孝昭 , Clement Delacou, Esko Kauppinen, 丸山 茂夫 , 松尾 豊

36

3-7

SiC上CNTフォレストの面内伝導度を利用した平行接触CNTの接触抵抗評価* 稲葉 優文 , 乗松 航 , 楠 美智子 , 川原田 洋

37

3-8

Photovoltaic performance of perovskite solar cells using carbon nanotubes/graphene oxidehole transport layer* Feijiu Wang, Masaru Endo, Shinichiro Mouri, Yuhei Miyauchi, Yutaka Ohno, Atsushi
Wakamiya, Yasujiro Murata, Kazunari Matsuda

38

3-9

グラフェンを鋳型に用いた金属酸化物ナノフィルム調製* 竹中 壮 , 三宅 修平 , 松根 英樹 , 岸田 昌浩

39

xiii
xiii

９月９日（水）＞＞＞＞＞＞＞ 昼食 (12：30-13：45) ＜＜＜＜＜＜＜特別講演 (13:45-14:15)
3S-8

Control of Physical Properties of Single Wall Carbon Nanotubes by Electric double layer
carrier injections* 柳 和宏8

一般講演 (14:15-15:00)
ナノチューブの物性
3-10Electrical activation of dark excitonic states in carbon nanotubes*Takushi Uda, Masahiro Yoshida , Akihiro Ishii, Yuichiro K. Kato

40

3-11

酸素ドープされた(5,4)および(6,4)カーボンナノチューブの光学特性* 大淵 真理 , 宮本 良之

41

3-12

Effect of sp defect on the electronic states of single-walled carbon nanotubes determined byin situ PL spectroelectrochemistry* 白石 智也 , 白木 智丈 , 中嶋 直敏

342＞＞＞＞＞＞＞ 休憩 (15:00-15:15) ＜＜＜＜＜＜＜ポスタープレビュー (15:15-15:55)
ポスターセッション (15:55-17:25)
フラーレンの化学
3P-1（☆） 若手奨励賞候補

一電子移動を経由した[Li+@C60]NTf2- とアネトールとの熱的[2+2]環化付加反応* 山﨑 優 , 小久保 研 , 伊熊 直彦 , 櫻井 英博

114

フラーレン
3P-2

外部電場下におけるフラーレンのエネルギー論* 反町 純也 , 岡田 晋

115

ナノチューブの物性
3P-3

単層カーボンナノチューブに内包されたヨウ素の低温ラマン測定* 川崎 晋司 , 石井 陽祐 , 吉田 征弘 , 谷口 慶充 , 山田 真之

116

3P-4

Rayleigh Scattering Spectroscopy of Single-Walled Carbon Nanotubes in Various Condition* Toru Osawsa, Takeshi Okochi, Yoritaka Furukawa, Taiki Inoue, Shohei Chiashi, Shigeo
Maruyama

117

3P-5

架橋カーボンナノチューブの通電加熱下における構造変化の多様性* 荒木 祐起 , 平原 佳織

118

3P-6
☆

水酸化単層カーボンナノチューブ及び関連材料の構造と固体特性* 佐野 喜章 , 緒方 啓典

119

ナノチューブの応用
3P-7

CNT/エポキシ樹脂界面制御による複合体補強* 藤ヶ谷 剛彦 , 三枝 裕典 , 百田 将吾 , 宇田 暢秀 , 中嶋 直敏

xiv
xiv

120

９月９日（水）
3P-8

121

☆

多層カーボンナノチューブに吸着担持されたコバルトクロリン錯体を電極触媒とする水中でのCO2からCOへの高選択性電気化学的還元反応* 青井 祥子 , 間瀬 謙太朗 , 大久保 敬 , 福住 俊一

3P-9☆

イオン液体添加による単層カーボンナノチューブ複合体の増強熱電効果* 中野 元博 , 野々口 斐之 , 中嶋 琢也 , 河合 壯

122

3P-10

High performance micro-supercapacitors with carbon nanotubes and flexible components* Fumiaki Tanaka, Atsuko Sekiguchi, Karolina Laszczyk, Kazufumi Kobashi, Shunsuke
Sakurai, Don Futaba, Takeo Yamada, Kenji Hata

123

3P-11

A durable Pt electrocatalyst with high performance based on poly(para-pyridine
benzimidazole)-wrapped carbon nanotubes* Zehui Yang, Tomohiro Shiraki, Tsuyohiko Fujigaya, Naotoshi Nakashima

124

3P-12

A very high methanol tolerant cathodic electrocatalyst for direct methanol fuel cell based on a 125
polymer wrapped method* Zehui Yang, Tomohiro Shiraki, Naotoshi Nakashima

3P-13
☆

Channel length dependence of characteristic variations in carbon nanotube thin-film transistors 126* Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

ナノチューブの生成と精製
3P-14

Effect of Free Electron Laser Irradiation on the Chirality of In-Plane Oriented Single-Walled 127
Carbon Nanotubes* 川口 大貴 , 吉田 圭佑 , 小林 弥生 , 春宮 清之介 , 永田 知子 , 岩田 展幸 ,

山本 寛
3P-15

高真空アルコールガスソース法によるAl2Ox/Pd/Al2Ox多層触媒を用いた単層カーボンナノ 128
チューブ成長* 桐林 星光 , 小澤 顕成 , 小川 征吾 , 才田 隆広 , 成塚 重弥 , 丸山 隆浩

3P-16

Water-assisted burning of metallic single-walled carbon nanotubes triggered by Joule heating 129
or field-emission electron* 大塚 慶吾 , 下村 勇貴 , 井ノ上 泰輝 , 千足 昇平 , 丸山 茂夫☆

内包ナノチューブ
3P-17
☆
3P-18

分子動力学・個体ＮＭＲ分光法による単層カーボンナノチューブに内包されたアルカリハライ 130
ドの局所構造と物性評価* 横倉 瑛太 , 片岡 洋右 , 緒方 啓典
分子動力学シミュレーションによるカーボンナノチューブに内包されたカルコゲンの構造およ 131
び物性評価* 佐藤 豊 , 片岡 洋右 , 緒方 啓典

グラフェン生成3P-19☆

In situ SEM/STM observations of monolayer graphene growth on SiC (0001) wide terraces* 王 辰星 , 中原 仁 , 安坂 幸師 , 齋藤 弥八

132

3P-20

遷移金属ダイカルコゲナイドによる多結晶グラフェンのグレイン構造の可視化* 深町 悟 , 遠藤 寛子 , モハマド ユヌス ロザン , 辻 正治 , 吾郷 浩樹

133

xv
xv

９月９日（水）3P-21☆

窒化ホウ素基板へのCVDグラフェンのポリマーフリー転写* Miho Fujihara, Shun Ogawa, Ryosuke Inoue, Yutaka Maniwa, Kenji Watanabe, Takashi
Taniguchi, Hisanori Shinohara, Yasumitsu Miyata

134

3P-22

Wキャップ層を用いた析出法における多層グラフェンの直接成長メカニズムの検討* 山田 純平 , 上田 悠貴 , 丸山 隆浩 , 成塚 重弥

135

グラフェンの応用
3P-23☆

Edge-Disorder Engineering on Thermoelectric Performance of Graphene Nanoribbons:
Theoretical and Computational Prediction* Tetsumi Izawa, Kengo Takashima, Takahiro Yamamoto

136

3P-24

CVD Growth of MoS2-Graphene Nanoribbon Heterostructures and High Gain Photodetectors 137* Rozan Mohamad Yunus, Hiroko Endo, Masaharu Tsuji, Hiroki Ago

3P-25

Gate-Tunable Doping Level of Molecular Doped Graphene* Pablo Solís Fernández, 辻 正治 , 吾郷 浩樹

3P-26
☆

Highly stable and sensitive graphene photosensor realized by thermally oxidized Au electrodes 139* Shohei Ishida, Yuki Anno, Masato Takeuchi, Masaya Matsuoka, Kuniharu Takei, Takayuki
Arie, Seiji Akita

3P-27

センサー応用に向けたグラフェン薄膜上ピレン密度評価* 松井 祐司 , 根岸 良太 , 小林 慶裕

3P-28

電着条件の違いによるナノカーボン材料へのPt-Ruナノ粒子の担持状態およびメタノール酸 141
化活性評価* 吉竹 晴彦 , 稲見 栄一 , 王 志朋 , 緒方 啓典

138

140

グラフェンの物性
3P-29☆

単一カイラリティSWNTのアンジップによるグラフェンナノリボンの作製* 福森 稔 , 田中 啓文 , 小川 琢冶

142

3P-30

グラフェン/Au(111)電極の電気化学特性評価* 中島 浩司 , 熊谷 諒太 , 保田 諭 , 村越 敬

143

3P-31

1次元コロネンポリマーの構造とその電子状態* 成田 康平 , 岡田 晋

144

3P-32

BおよびNドープされた２層グラフェンの電子物性
藤本 義隆 , * 斎藤 晋

145

3P-33
☆

Growth and characterization of single- and few-layer NbS2 and NbSe2* Takato Hotta, Sihan Zhao, Kenji Watanabe, Takashi Taniguchi, Hisanori Shinohara, Ryo
Kitaura

146

3P-34

Anisotropy of optical absorption spectrum of phosphorene* Yuki Tatsumi, Pourya Ayria, Huaihong Guo, Teng Yang, Riichiro Saito

147

3P-35
☆

Mo1-xRexS2/MoS2ヘテロ構造の合成と評価* 森 勝平 , 真庭 豊 , 宮田 耕充

148

原子層

xvi
xvi

９月９日（水）3P-36☆

Exploring transport property of MoS2 field effect transistor by scanning gate microscopy* 松永 正広 , 樋口 絢香 , He Guanchen, Bird Jonathan, 落合 勇一 , 青木 伸之

xvii
xvii

149

September 7th, Mon.
Plenary Lecture: 40min (Presentation) + 5min (Discussion)Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
Plenary Lecture (9:30-10:15)
1S-1

Introduction to the CMCM, Carbon Materials for the Future, and Some New Results on
Graphene1* Rodney S. Ruoff

General Lecture (10：15-11：00)
Graphene synthesis
1-1Electrical properties of graphene synthesized by low temperature plasma techniques

10* Takatoshi Yamada, Yuki Okigawa, Masatou Ishihara, Hiromitsu Kato, Masataka
1-2

Formation mechanism of anisotropic cracks in graphene grown on copper foil

11

* Miho Fujihara, Ryosuke Inoue, Rei Kurita, Toshiyuki Taniuchi, Yoshihito Motoyui, Shik
Shin, Fumio Komori, Yutaka Maniwa, Hisanori Shinohara, Yasumitsu Miyata
1-3

Large scale synthesis of densely-aligned suspended graphene nanoribbons array byplasma CVD

12* Hiroo Suzuki, Toshiaki Kato, Toshiro Kaneko＞＞＞＞＞＞＞ Coffee Break (11：00-11：15) ＜＜＜＜＜＜＜Special Lecture (11：15-11：45)
1S-2

Floating catalyst CVD synthesis of non-bundled SWNTs with narrow chiral angle
distribution

2* Esko I. Kauppinen

General Lecture (11:45-12:30)
Formation and purification of nanotubes ・ Applications of nanotubes
1-4

Relationship between growth rate and catalyst lifetime on carbon nanotube forest
synthesis

13* Naoyuki Matsumoto, Guohai Chen, Robert C. Davis, Hiroe Kimura, Shunsuke Sakurai,
Motoo Yumura, Don N. Futaba, Kenji Hata
1-5

Control of bioreactions in living organisms by carbon nanotube supramolecularnanohybrids

14* Eijiro Miyako, Svetlana Chechetka, Motomichi Doi, Eiji Yuba, Kenji Kono
1-6

Dispersion of carbon nanotubes in organic solvents using inorganic salts

15* Kazuya Matsumoto, Takuro Takahashi, Mitsutoshi Jikei＞＞＞＞＞＞＞ Lunch Time (12:30-13：45) ＜＜＜＜＜＜＜Special Lecture (13：45-14：15)
1S-3

Unique properties of nanocarbon materials revealed by in situ TEM and FEM

Yuji Shinomiya, Noboru Yokoyama, Koji Asaka, Hitoshi Nakahara, * Yahachi Saito

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September 7th, Mon.
General Lecture (14：15-15：00)
Properties of nanotubes ・ Endohedral nanotubes
1-7

Lattice vibration in isotopic superlattice of carbon nanotubes

16* Susumu Saito, Yuki Bando
1-8

Analytical transmission electron microscopy of water encapsulated in single-wall carbon
nanotube17* Keita Kobayashi, Ryosuke Kuroiwa, Hidehiro Yasuda
1-9Magnetic properties of nano metals

18* Hidetsugu Shiozawa

General Lecture (15:00-15:30)
Applications of nanotubes ・ Applications of graphene
1-10High-efficiency biological imaging using single-chiral (9,4) SWCNTs

19* Yohei Yomogida, Minfang Zhang, Masako Yudasaka, Xiaojun Wei, Takeshi Tanaka,
Hiromichi Kataura
1-11

Graphene Oxide as a Multifunctional Platform for Cell Imaging

20

Zhenyu Zhang, Qinghai Liu, Juan Yang, * Yan Li＞＞＞＞＞＞＞ Coffee Break (15：30-15：45) ＜＜＜＜＜＜＜General Lecture (15：45-16：30)
Fullerenes
1-12

Alkali-metal-doped fullerene for application to superconducting wires

21* Hiroyuki Takeya, Toshio Konno, Chika Hirata, Takatsugu Wakahara, Kunich Miyazawa,
Masashi Tanaka, Takahide Yamaguchi, Yoshihiko Takano
1-13Singlet oxygen generation from Li+@C60 nano-aggregates dispersed by laser irradiation inaqueous solution

22* Kei Ohkubo, Kohno Naoki, Shunichi Fukuzumi
1-14

Chemical and physical control of superconductivity and magnetism

23* Yasuhiro Takabayashi, Ruth H. Zadik, Kosmas Prassides

Poster Preview (16：30-17：10)
Poster Session (17：10-18：40 （☆）Candidates for the Young Scientist Poster Award
Chemistry of fullerenes
1P-1

Regioselectively Arylated Fullerenes by Acid-catalyzed Reaction of Azafulleroids as an
Ambident Base44

* Naohiko Ikuma, Koichi Fujioka, Yuta Doi, Ken Kokubo, Hidehiro Sakurai, Takumi Oshima

Applications of fullerenes
1P-2

Solid-state NMR Studies on the Aggregated Structures of Organic Bulk Heterojunction
Solar Cells with Solvent additives(III)* Saki Kawano, Hironori Ogata

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45

September 7th, Mon.
Endohedral metallofullerenes
1P-3☆

A new method for the isolation of the hidden metallofullerenes like Y2@C80

46* Natsumi Nakatori, Aimi Togashi, Wataru Fujita, Koichi Kikuchi, Yohji Achiba, Takeshi
KodamaProperties of nanotubes
1P-4☆

An atlas of thermoelectric power of semiconducting carbon nanotubes

1P-5

Stability of chemisorbed oxygen on carbon nanotube surface

47* Nguyen Tuan Hung, Ahmad Ridwan Tresna Nugraha, Riichiro Saito48* Gergely Juhasz, Naotoshi Nakashima
1P-6

Anomalous potential properties between CNTs under a weak external electric field49* U Ishiyama, Susumu Okada
1P-7

Dependence of Thermoelectric Properties on Chiralities of Single Wall Carbon Nanotubes

50* Yuki Oshima, Yoshimasa Kitamura, Hideki Kawai, Yutaka Maniwa, Kazuhiro Yanagi

Applications of nanotubes
1P-8

Metal-free Transparent Organic Solar Cell using Dopant Enhanced Carbon Nanotube
Electrode and its Transfer Methodologies☆

* Il Jeon, Clement Delacou, Esko Kauppinen, Shigeo Maruyama, Yutaka Matsuo

1P-9

Carbon nanotube papers capturing Si nanoparticles for binder-free anodes of lithium ion
batteries☆

* Takayuki Kowase, Kei Hasegawa, Suguru Noda

1P-10

Computational analysis of inelastic electronic transport properties in single-walled carbon
nanotubes

51

52

53

* Keisuke Ishizeki, Kenji Sasaoka, Takahiro Yamamoto
1P-11

Development of Poly(vinylsulfonic acid) wrapped Multi-Walled Carbon Nanotube for Fuel
Cell Electrode Catalyst

54* Akiyo Nagashima, Tsuyohiko Fujigaya, Naotoshi Nakashima
1P-12

Flexible and semi-transparent film heater for temperature range higher than 100 °C
using single-wall carbon nanotube film

55

* Daiki Kobayashi, Kuniharu Takei, Takayuki Arie, Seiji Akita
1P-13☆

Ultra-high sensitivity carbon nanotube biosensors based on redox cycle process

1P-14High thermal durable fluorinated rubber and CNT composite

56* Takuya Ushiyama, Nguyen Xuan Viet, Shigeru Kishimoto, Yutaka Ohno
57

* Seisuke Ata, Eiichi Usuda, Takaaki Mizuno, Ayumi Nishizawa, Shigeki Tomonoh, Takeo
Yamada, Kenji Hata
1P-15

Highly stable carbon nanotube/ultrathin cross-linked polymer hybrids for biomedical
applications

58* Yusuke Tsutsumi, Tsuyohiko Fujigaya, Naotoshi Nakashima

Formation and purification of nanotubes
1P-16

Purification of metal/semiconductive single-wall carbon nanotubes in two immiscible
aqueous solution phase

Ryo Ishida, Marin Ohtsuka, Naoki Kanazawa, * Shinzo Suzuki, Akira Ono

xx
xx

59

September 7th, Mon.
1P-17

Synthesis of Single-Walled Carbon Nanotubes from Rh Catalysts at Low Temperature by
Alcohol Gas Source Method in High Vacuum

60* Akinari Kozawa, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya
Naritsuka, Takahiro Maruyama
1P-18

A Growth Mechanism of (6,5)-Nanotube Cap on the Basis of Vibronic Coupling Density
Analysis61* Naoki Haruta, Tohru Sato, Yohji Achiba, Takeshi Kodama, Hirofumi Sato,
Haruo Shiromaru
1P-19

Metallic/Semiconducting Separation by Electric-Field-Induced Layer Formation Method
Applied to SWCNTs Purified for Removal of Catalysts☆

* Fusako Sasaki, Fumiyuki Nihey, Yuki Kuwahara, Takeshi Saito, Hiroyuki Endoh, Shinichi
Yorozu

1P-20
☆
1P-21
☆

Time evolution study of narrow-chirality distributed single-walled carbon nanotubes
synthesis during pulse plasma CVD

6263* Bin Xu, Toshiaki Kato, Toshiro Kaneko
Selective synthesis of single-walled carbon nanotubes using sputtered W/Co

64

* Hua An, Rong Xiang, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama

Nanohorns
1P-22

Preparation and Characterization of Fibrous Aggregates of Single-Walled Carbon
Nanohorns

65* Ryota Yuge, Fumiyuki Nihey, Kiyohiko Toyama, Masako Yudasaka

Graphene synthesis
1P-23

Electrochemical Exfoliation of Graphite Intercalation Compounds Encapsulated in Polymer

66* Yasunaga Tan-no, Haruya Okimoto, Masahito Sano
1P-24☆

Fabrication of clean graphene/BN heterostructures by metal melting transfer

67* Ryosuke Inoue, Kenji Watanabe, Takashi Taniguchi, Yutaka Maniwa, Yasumitsu Miyata

Applications of graphene
1P-25Graphene Etching Reaction Analyzed by a Time-Reversed Crystallization Theory

68* Yu-uto Watanabe, Yu-usuke Ikemura, Masahito Sano

Properties of graphene
1P-26

Raman spectroscopy of graphene in magnetic field69* Toshiya Shirakura, Riichiro Saito
1P-27☆

Optical Properties of Atomically Layer Black Phosphorus

1P-28
☆

Magnetic properties of graphene quantum dots embedded in h-BN

70

* Takashi Nakamura, Daichi Kozawa, Shinichiro Mouri, Kazunari Matsuda
71* Mina Maruyama, Susumu Okada

Carbon nanoparticles
1P-29

A durable Pt electrocatalyst supported on a polybenzimidazole wrapped 3D nanoporous
carbon shows a high fuel cell performance* Zehui Yang, Tomohiro Shiraki, Isamu Moriguchi, Naotoshi Nakashima

xxi
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72

September 7th, Mon.
1P-30

Synthesis of carbon nanopot with Fe catalyst supported on graphene oxide73* Hiroyuki Yokoi, Kazuto Hatakeyama, Michio Koinuma, Takaaki Taniguchi, Yasumichi
MatsumotoAtomic Layers
1P-31☆

Bound Exciton Emission in Photoluminescence Spectrum of Monolayer WSe2

1P-32

In-situ electrochemical Raman Spectroscopic Studies of MoS2 grown on Au(111)74* N.Baizura Mohamed, Feijiu Wang, Shinichiro Mouri, Koirala Sandhaya, Yuhei Miyauchi,
Kazunari Matsuda
75* Ryosuke Takahashi, Ryota Kumagai, Satoshi Yasuda, Kei Murakoshi
1P-33☆

First-principles study of the morphology of MoS2 on Al2O3(0001)

76* Hideyuki Jippo, Kenjiro Hayashi, Shintaro Sato, Mari Ohfuchi

Other topics
1P-34

Preparation of iron oxide nanotubes with spectral sensitivity peak at red light region andits application to photo-voltaic device

77* Yuta Kosugi , Takuya Tomiyasu, Shunji Bandow
1P-35

Fabrication and Brightness Evaluation of Nano-Carbon Field Emission Electron Source* Hitoshi Nakahara, Shinichi Ito, Yahachi Saito

xxii
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78

September 8th, Tue.
Plenary Lecture: 40min (Presentation) + 5min (Discussion)Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)Award Nominee Lectures: 10min (Presentation) + 10min (Discussion)
Poster Preview: 1min (Presentation)
Plenary Lecture (9:00-9:45)
2S-4

Graphene and beyond: Attraction, Reality and Future4* Zhongfan Liu

General Lecture (9：45-10：45)
Properties of graphene・Atomic Layers
2-1

Tunable absorption of electromagnetic wave in graphene for a total reflection geometry of 24
dielectric materials* Riichiro Saito, Cole Reynolds, Shoufie Ukhtary
2-2

Energetics and electronic structure of h-BN nanoribbons

25* Ayaka Yamanaka, Susumu Okada
2-3

Carrier-density- and Electric-field-dependent Electroluminescence of Monolayer WSe2

26

* Jiang Pu, Leiqiang Chu, Lain-Jong Li, Tomo Sakanoue, Goki Eda, Taishi Takenobu
2-4Memristive phase switching in two-dimensional crystals

27* Masaro Yoshida, Ryuji Suzuki, Yijin Zhang, Masaki Nakano, Yoshihiro Iwasa＞＞＞＞＞＞＞ Coffee Break ( 10：45-11：00) ＜＜＜＜＜＜＜Iijima Award Nominee Lectures (11:00-12:00)
2-5

Direct Analysis of Exciton Band Structure of SWCNTs using Their Circular Dichroism
Spectra28* Xiaojun Wei, Mayumi Tsuzuki, Takuya Hirakawa, Yohei Yomogida, Atsushi Hirano,
Shunjiro Fujii, Takeshi Tanaka, Hiromichi Kataura
2-6

On chip monolithic integration of microsupercapacitors with tunable performance29* Karolina Laszczyk, Kobashi Kazufumi, Shunsuke Sakurai, Atsuko Sekiguchi, Don Futaba,
Takeo Yamada, Kenji Hata
2-7

In-plane TEM investigation on mono- and bi- metallic catalyst for growth of single walledcarbon nanotubes* Rong Xiang, Akihito Kumamoto, Kehang Cui, Hua An, Yang Qian, Taiki Inoue, Shohei
Chiashi, Yuichi Ikuhara, Shigeo Maruyama＞＞＞＞＞＞＞ Lunch Time (12：00-13：15) ＜＜＜＜＜＜＜Awards Ceremony (13：15-13：30)
General Meeting (13：30-14：00)

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September 8th, Tue.
Special Lecture (14:00-14:30)
2S-5

Spectroscopic analysis on electrochemical oxidation reaction of single-walled carbon
nanotubes

5* Masato Tominaga

Poster Preview (14:30-15:10)
Poster Session (15:10-16:40） （☆）Candidates for the Young Scientist Poster Award
Applications of fullerenes
2P-1

Preparation of [C60]Fullerene Nanowhiskers-Gold Nanoparticles Composites and Their
Catalytic Activity for Reduction of 4-Nitrophenol79* Jeong Won Ko, Jiulong Li, Weon Bae Ko
2P-2

Development of O-acetylated sugar substituted fullerenes for solution-processed organic
field-effect transistors and photovoltaics☆

* Yu Uemura, Akifumi Yagami, Masayoshi Yoshitake, Yuta Murakami, Yoshihiko Nishihara,
Masayuki Chikamatsu, Keiji Mizuki, Taizo Hatta

80

Properties of nanotubes
2P-3☆

Curvature Effect on Wettability of Carbon Nanotubes

81* Konan Imadate, Kaori Hirahara

Applications of nanotubes
2P-4

Activity and Durability Evaluation of Non-Precious Metal Electrocatalyst for Oxygen
Reduction Reaction in Fuel Cell82

* Yosuke Uchibori, Atom Furuya, Satoshi Yasuda, Kei Murakoshi
2P-5

Laccase bioelectrocatalytic high potential oxygen reduction at steroid-type biosurfactant- 83
modified carbon nanotube interface* Aiko Sasaki, Makoto Togami, Masato Tominaga
2P-6☆

Application of diameter-tunable single-walled carbon nanotubes to CNT-silicon solar cells 84

2P-7

Carbon Nanotube Thin-Film Transistor for Flexible Biosensor Applications* Yang Qian, Kehang Cui, Rong Xiang, Shohei Chiashi, Shigeo Maruyama
85* X. Viet Nguyen, Shigeru Kishimoto, Yutaka Ohno
2P-8

Temperature dependence on the synthesis of Pt nanoclusters on polybenzoimidazolewrapped carbon nanotubes for use in oxygen reduction reaction catalyst☆

* Yuki Hamasaki, Tsuyohiko Fujigaya, Naotoshi Nakashima

86

Formation and purification of nanotubes
2P-9☆

Sub-millimeter-tall vertically-aligned CNT arrays directly grown on Al foils

2P-10

Bulk separation of (6,5) enantiomer single-wall carbon nanotubes

87* Yu Yoshihara, Kei Hasegawa, Suguru Noda
88

* Takeshi Tanaka, Takuya Hirakawa, Xiaojun Wei, Yohei Yomogida, Atsushi Hirano,
Shunjiro Fujii, Hiromichi Kataura
2P-11☆

Synthesis and characterization of SWNTs from activated nanotube edges

2P-12

Control of diameter and chirality of single-walled carbon nanotubes due to magnetic field89* Hiroki Takezaki, Keigo Otsuka, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama* Yasumasa Takashima, Atom Hamasaki, Jin Uchimura, Ayumi Sakaguchi, Sumio Ozeki

xxiv
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90

September 8th, Tue.
2P-13

Solubilization of Single-Walled Carbon Nanotubes Using Riboflavin and Analysis of
Temperature Dependent Solubilization Behavior

91* Wataru Ishimaru, Fumiyuki Toshimitsu, Naotoshi Nakashima

Endohedral nanotubes
2P-14

Synthesis and Characterization of Single-Molecule Magnet Encapsulated in Carbon
Nanotube

92

Mudasir Ahmad Yatoo, * Ryo Nakanishi, Keiichi Katoh, Takeshi Saito, Masahiro Yamashita
2P-15☆

Metalorganic chains assambled inside single-wall carbon nanotubes

93* Oleg Domanov, Markus Sauer, Michael Eisterer, Takashi Saito, Herwig Peterlik, Thomas
Pichler, Hidetsugu Shiozawa

Graphene synthesis
2P-16

Synthesis and electronic evaluation of bilayer graphene94* Ryo Hoshino, Yutaro Hayashi, Nozomi Suzuki, Kentaro Imai, Tomoko Nagata, Nobuyuki
Iwata, Hiroshi Yamamoto
2P-17

Growth temperature dependence of CVD-growth of highly uniform multilayer grapheneusing Au/Ni catalyst

95* Yuki Ueda, Jumpei Yamada, Itsuki Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro
Maruyama, Shigeya Naritsuka
2P-18☆

Synthetic Studies toward BN-Doped Graphene/Nanographene Using the Borazine
Derivatives

96* Yasuyo Ishio, Haruka Omachi, Ryo Kitaura, Hisanori Shinohara

Applications of graphene
2P-19☆

Residual particles on transferred CVD graphene97* Tomohiro Yasunishi, Yuya Takabayashi, Shigeru Kishimoto, Ryo Kitaura, Hisanori
Shinohara, Yutaka Ohno

Properties of graphene
2P-20

Electron confinement in graphene-based junction

98* Yuya Inoue, Riichiro Saito
2P-21

H Dependence of the Electrochemical Reaction of Graphene Oxide Evaluated by SEIRAS

99* Katsuhiko Nishiyama, Yasuhiro Yoshimura, Yusuke Hayashi, Kazuto Hatakeyama, Michio
Koinuma, Soichiro Yoshimoto, Yasumichi Matsumoto
2P-22☆

Comprehensive Study of Edge-Disordered Graphene Nanoribbons

2P-23
☆

Photocurrent Spectroscopy in monolayer WSe2 p-n junction

2P-24

Band-gap tuning of bilayer graphene by defects and inter-layer spacing

100* Kengo Takashima, Takahiro Yamamoto
101* Shota Kimura, Daichi Kozawa, Taiyo Fujimoto, Yoshifumi Wada, Jiang Pu, Keiichiro
Matsuki, Lain-Jong Li, Taishi Takenobu
102* Ken Kishimoto, Susumu Okada
2P-25

Magnetic properties of graphene flakes connected via sp3 C atoms* Susumu Okada

xxv
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103

September 8th, Tue.
Carbon nanoparticles
2P-26

Measurement of powder resistivity of carbon nanomaterials with different geometries and 104
graphitic structures* Yoshiyuki Suda, Kohei Mizui, Tatsuo Ohiro, Yoshiaki Shimizu, Toru Harigai, Hirofumi
Takikawa, Hitoshi Ue
2P-27

Evaluation of catalytic activity of fuel cell catalyst nanoparticles loaded on carbon

105* Yoshiyuki Suda, Tatsuo Ohiro, Kohei Mizui, Toru Harigai, Hirofumi Takikawa, Hitoshi Ue
2P-28

Structure of amorphous carbon deposited on nanometer-seized nickel particles underultrahigh vacuum at room temperature

106* Koji Asaka, Yahachi Saito

Atomic Layers
2P-29☆

Conducting one-dimensional interface in an atomic-layer semiconductor heterojunction

2P-30
☆

CVD growth and characterization of Nb-doped WS2 monolayers

2P-31

In-plane Heterostructures Thin Films of Graphene and MoS2

107

* Yu Kobayashi, Yutaka Maniwa, Yasumitsu Miyata
108* Shogo Sasaki, Yu Kobayashi, Yutaka Maniwa, Yasumitsu Miyata
109* Yoshihiro Shiratsuchi, Hiroko Endo, MasaharuTsuji, Hiroki Hibino, Hiroki Ago
2P-32☆

Functionalization of few-layer tungsten diselenide with mild O2 plasma treatment

2P-33

Local Optical Absorption Spectra of Transition Metal Dichalcogenide Monolayer by
Scanning Near-field Optical Microscopy Measurements

110* Reito Nagai, Toshiaki Kato, Tomoyuki Takahashi, Toshiro Kaneko
111

Junji Nozaki, Shohei Mori, Yasumitsu Miyata, Yutaka Maniwa, * Kazuhiro Yanagi

Other topics
2P-34

The topological and electronic structure of Starfish nanocarbon

112* Natsuki Namba, Yukihiro Takada, Kyoko Nakada
2P-35

Room temperature synthesis of two-dimensional organic framework materials* Gayoung Kim, Tomohiro Shiraki, Naotoshi Nakashima

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113

September 9th, Wed.
Special Lecture: 25min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)
Special Lecture (9:00-9:30)
3S-6

Thirty Years after C60 Discovery and Fifteen Years after Detonation Nanodiamond
Rediscovery

6* Eiji Ō sawa

General Lecture (9:30-10:15)
Chemistry of fullerenes
3-1

Selective Synthesis of Cobalt-sulfur Nano Cluster Using a Templating Fullerene Ligand

31* Yutaka Matsuo
3-2

Regioselectively controlled synthesis of multifunctionalized C60 and C70 fullerenes

32* Hiroshi Moriyama, Kouya Uchiyama, Miki Igarashi, Keita Watanabe, Haruka Takahashi,
Kenji Yoza
3-3

Electronic structure of Y2@C82 and Lu2@C82

33* Takafumi Miyazaki, Gaku Takasumi, Hajime Yagi, Hisanori Shinohara, Shojun Hino

General Lecture (10:15-10:45)
Applications of nanotubes
3-4

Effect of layered-structure carbon-nanotube sheets on electric properties of brain wave
electrodes

34* Shunzo Suematsu, Akira Kawamoto, Kousuke Awara, Ryuhei Kitai
3-5

Robust and Soft Elastomeric Field Effect Transistors Tolerant to Diverse Variety ofApplied Loads

35* Atsuko Sekiguchi, Fumiaki Tanaka, Shunsuke Sakurai, Don N. Futaba, Takeo Yamada,
Kenji Hata＞＞＞＞＞＞＞ Coffee Break (10:45-11:00) ＜＜＜＜＜＜＜Special Lecture (11:00-11:30)
3S-7

Nano-Carbon Interconnect Technologies for LSIs: Important Considerations of E dge
Control

7* Yuji Awano

General Lecture (11:30-12:30)
Applications of nanotubes ・ Applications of graphene
3-6Indium-Free Flexible Planar Heterojunction Perovskite Solar Cells using Single-walled
Carbon Nanotube film as Electrode, and Investigation of Hole-transporting Layers andDopants thereof

36* Il Jeon, Takaaki Chiba, Clement Delacou, Esko Kauppinen, Shigeo Maruyama, Yutaka
Matsuo3-7Contact resistivity evaluation of parallel adjacent CNTs from in-plane conductivity ofdense CNT forest on silicon carbide* Masafumi Inaba, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada

xxvii
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37

September 9th, Wed.
3-8

Photovoltaic performance of perovskite solar cells using carbon nanotubes/graphene
oxide hole transport layer

38* Feijiu Wang, Masaru Endo, Shinichiro Mouri, Yuhei Miyauchi, Yutaka Ohno, Atsushi
Wakamiya, Yasujiro Murata, Kazunari Matsuda
3-9Preparation of metal oxide nanofilms using graphene templates

39* Sakae Takenaka, Shuhei Miyake, Hideki Matsune, Masahiro Kishida＞＞＞＞＞＞＞ Lunch Time (12：30-13：45) ＜＜＜＜＜＜＜Special Lecture (13:45-14:15)
3S-8

Control of Physical Properties of Single Wall Carbon Nanotubes by Electric double layer
carrier injections

8* Kazuhiro Yanagi

General Lecture (14:15-15:00 )Properties of nanotubes
3-10Electrical activation of dark excitonic states in carbon nanotubes

40*Takushi Uda, Masahiro Yoshida , Akihiro Ishii, Yuichiro K. Kato
3-11

Optical transitions in oxygen-doped (5,4) and (6,4) carbon nanotubes

41* Mari Ohfuchi, Yoshiyuki Miyamoto
3-12

Effect of sp3 defect on the electronic states of single-walled carbon nanotubes
determined by in situ PL spectroelectrochemistry42* Tomonari Shiraishi, Tomohiro Shiraki, Naotoshi Nakashima＞＞＞＞＞＞＞ Coffee Break (15:00-15:15) ＜＜＜＜＜＜＜Poster Preview (15:15-15:55)
Poster Session (15:55-17:25) （☆）Candidates for the Young Scientist Poster Award
Chemistry of fullerenes
3P-1

Thermal [2+2] cycloaddition of [Li+@C60]NTf2- with anethole via single electron transfer 114
process* Yu Yamazaki, Ken Kokubo, Naohiko Ikuma, Hidehiro Sakurai

Chemistry of fullerenes
3P-2

Energetics of fullerenes under an external electric field

115* Jun-ya Sorimachi, Susumu Okada

Fullerenes
3P-3

Low temperature Raman measurements of iodine molecules encapsulated in single-walled 116
carbon nanotubes* Shinji Kawasaki, Yosuke Ishii, Yukihiro Yoshida, Yoshimitsu Taniguchi, Masayuki Yamada
3P-4Rayleigh Scattering Spectroscopy of Single-Walled Carbon Nanotubes in Various
Condition* Toru Osawsa, Takeshi Okochi, Yoritaka Furukawa, Taiki Inoue, Shohei Chiashi, Shigeo
Maruyama

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September 9th, Wed.
3P-5

Variety of structural modulations in bridged carbon nanotubes under joule heating

118* Yuki Araki, Kaori Hirahara
3P-6

Structure and solid state properties of hydroxylated single-walled carbon nanotubes andrelated materials☆

* Yoshiaki Sano, Hironori Ogata

119

Applications of nanotubes
3P-7

Interfacial Engineering of Epoxy Composite Reinforced by Polybenzimidazole-wrapped
Carbon Nanotubes

120* Tsuyohiko Fujigaya, Yusuke Saegusa, Shogo Momota, Nobuhide Uda,
Naotoshi Nakashima
3P-8

Selective Electrochemical Reduction of CO2 to CO with a Cobalt Chlorin Complex
Adsorbed on Multi-Walled Carbon Nanotubes in Water☆

* Shoko Aoi, Kentaro Mase, Kei Ohkubo, Shunichi Fukuzumi

3P-9

Enhanced Thermoelectric Properties of Single-Walled Carbon Nanotubes with Ionic
Liquid-derived Polymers☆

* Motohiro Nakano, Yoshiyuki Nonoguchi, Takuya Nakashima, Tsuyoshi Kawai

3P-10

121

122

High performance micro-supercapacitors with carbon nanotubes and flexible components 123* Fumiaki Tanaka, Atsuko Sekiguchi, Karolina Laszczyk, Kazufumi Kobashi, Shunsuke
Sakurai, Don Futaba, Takeo Yamada, Kenji Hata
3P-11

A durable Pt electrocatalyst with high performance based on poly(para-pyridine
benzimidazole)-wrapped carbon nanotubes

124* Zehui Yang, Tomohiro Shiraki, Tsuyohiko Fujigaya, Naotoshi Nakashima
3P-12

A very high methanol tolerant cathodic electrocatalyst for direct methanol fuel cell based 125
on a polymer wrapped method* Zehui Yang, Tomohiro Shiraki, Naotoshi Nakashima
3P-13☆

Channel length dependence of characteristic variations in carbon nanotube thin-film
transistors

126* Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

Formation and purification of nanotubes
3P-14

Effect of Free Electron Laser Irradiation on the Chirality of In-Plane Oriented SingleWalled Carbon Nanotubes

127* Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko
Nagata, Nobuyuki Iwata, Hiroshi Yamamoto
3P-15

Single-Walled Carbon Nanotube Synthesis using Al2Ox/Pd/Al2Ox multilayer catalyst byalcohol Gas Source Method in High Vacuum

128* Hoshimitsu Kiribayashi, Akinari Kozawa, Seigo Ogawa, Takahiro Saida, Shigeya
Naritsuka, Takahiro Maruyama
3P-16☆

Water-assisted burning of metallic single-walled carbon nanotubes triggered by Joule
heating or field-emission electron* Keigo Otsuka, Yuuki Shimomura, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama

xxix
xxix

129

September 9th, Wed.
Endohedral nanotubes
3P-17
☆
3P-18

Local structure and properties of the alkali halide crystals encapsulated in single-walledcarbon nanotubes studied by molecular dynamics simulations and solid-state NMR
spectroscopy

130* Eita Yokokura, Yousuke Kataoka, Hironori Ogata
Molecular structure of chalcogen encapsulated in single-walled carbon nanotubes studied 131
by molecular dynamics simulations* Yutaka Sato, Yosuke Kataoka, Hironori Ogata

Graphene synthesis
3P-19☆

In situ SEM/STM observations of monolayer graphene growth on SiC (0001) wide terraces 132

3P-20

Visualization of Grain Structure of Polycrystalline Graphene by Transition Metal
Dichalcogenide* Chenxing Wang, Hitoshi Nakahara, Koji Asaka, Yahachi Saito
133* Satoru Fukamachi, Hiroko Endo, Rozan Mohamad Yunus, Masaharu Tsuji, Hiroki Ago
3P-21☆

Polymer-free transfer of CVD graphene to boron nitride substrates

134

3P-22

Study of direct growth mechanism of multi-layer graphene by precipitation method using 135
W capping layer* Miho Fujihara, Shun Ogawa, Ryosuke Inoue, Yutaka Maniwa, Kenji Watanabe, Takashi
Taniguchi, Hisanori Shinohara, Yasumitsu Miyata* Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka

Applications of graphene
3P-23
☆
3P-24

Edge-Disorder Engineering on Thermoelectric Performance of Graphene Nanoribbons:
Theoretical and Computational Prediction

136* Tetsumi Izawa, Kengo Takashima, Takahiro Yamamoto
CVD Growth of MoS2-Graphene Nanoribbon Heterostructures and High Gain
Photodetectors

137* Rozan Mohamad Yunus, Hiroko Endo, Masaharu Tsuji, Hiroki Ago
3P-25

Gate-Tunable Doping Level of Molecular Doped Graphene138* Pablo Solís Fernández, Masaharu Tsuji, Hiroki Ago
3P-26

Highly stable and sensitive graphene photosensor realized by thermally oxidized Au
electrodes☆

* Shohei Ishida, Yuki Anno, Masato Takeuchi, Masaya Matsuoka, Kuniharu Takei,
Takayuki Arie, Seiji Akita

3P-27

Evaluation of pyrene density on graphene films: toward sensor applications

139

140

* Yuji Matsui, Ryota Negishi, Yoshihiro Kobayashi
3P-28

Effects of electrodeposition conditions on the states of Pt-Ru nanoparticles on
nanocarbon materials and their electrocatalytic activities for methanol oxidation(II)141* Haruhiko Yoshitake, Eiichi Inami, Zhipeng Wang, Hironori Ogata

Properties of graphene
3P-29☆

Fabrication of Graphene Nanoribbons by Unzip of Chirality-Selected Single-walled Carbon 142
Nanotubes* Minoru Fukumori, Hirofumi Tanaka, Takuji Ogawa

xxx
xxx

September 9th, Wed.
3P-30

Evaluation of Electrochemical Characteristic of Graphene/Au(111) Electrode143* Koji Nakashima, Ryota Kumagai, Satoshi Yasuda, Kei Murakoshi
3P-31

Geometric and electronic structures of one-dimensionally polymerized coronene
molecules

144* Kohei Narita, Susumu Okada
3P-32

Electronic properties of B/N-doped bilayer graphene

145

Yoshitaka Fujimoto, * Susumu Saito

Atomic Layers
3P-33☆

Growth and characterization of single- and few-layer NbS2 and NbSe2

3P-34

Anisotropy of optical absorption spectrum of phosphorene

146* Takato Hotta, Sihan Zhao, Kenji Watanabe, Takashi Taniguchi, Hisanori Shinohara, Ryo
Kitaura147* Yuki Tatsumi, Pourya Ayria, Huaihong Guo, Teng Yang, Riichiro Saito
3P-35☆

Synthesis and characterization of Mo1-xRexS2/MoS2 heterostructures

148

3P-36
☆

Exploring transport property of MoS2 field effect transistor by scanning gate microscopy 149* Shohei Mori, Yutaka Maniwa, Yasumitsu Miyata* Masahiro Matsunaga, Ayaka Higuchi, Guanchen He, Jonathan Bird, Yuichi Ochiai,
Nobuyuki Aoki

xxxi
xxxi

基調講演
Plenary Lecture&
特別講演
Special Lecture

1S – 1 ～ 1S – 3
2S – 4 ～ 2S – 5
3S – 6 ～ 3S – 8

1S-1
Introduction to the CMCM, Carbon Materials for the Future, and Some
New Results on Graphene
Rodney S. Ruoff1, 2
1Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS),
Center on the UNIST Campus, Ulsan 689-798, Republic of Korea
2
Department of Chemistry and School of Materials Science, Ulsan National Institute of
Science & Technology (UNIST), Ulsan 689-798, Republic of Korea

I appreciate the opportunity to introduce the Center for Multidimensional Carbon Materials(CMCM), an Institute of Basic Science (IBS) Center located at the Ulsan National Institute of
Science and Technology (UNIST) campus. I then offer a personal perspective of what new
carbon and related materials might be achieved in the future. These include ‘negative
curvature carbons’, ‘diamane’ and related ultrathin sp3-bonded carbon films/foils,
sp2/sp3-hybrid materials, and others. I also plan to discuss some of our recent results achieved
through the preparation of ‘special types’ of metal foils as substrates for graphene andmultilayer graphene growth, as well as some results on functionalizing graphene in new ways.
Of possible interest for this talk are these articles:[1] (a) X. K. Lu, M. F. Yu, H. Huang, and R. S. Ruoff. Nanotechnology, 10, 269-272 (1999). (b) X. K. Lu, H.
Huang, N. Nemchuk, and R. S. Ruoff. Applied Physics Letters, 75, 193-195 (1999).
[2] Y. W. Zhu, S. Murali, M. D. Stoller, K. J. Ganesh, W. W. Cai, P. J. Ferreira, A. Pirkle, R. M. Wallace, K. A.
Cychosz, M. Thommes, D. Su, E. A. Stach, and R. S. Ruoff. Science 332, 1537-1541 (2011).
[3] D. Odkhuu, D. Shin, R. S. Ruoff, and N. Park. Scientific Reports 3, 3276 (2013).
[4] R. S. Ruoff. MRS Bulletin, 37, 1314-1318 (2012).
[5] Y. F. Hao, M. S. Bharathi, L. Wang, Y. Liu, H. Chen, S. Nie, X. Wang, H. Chou, C. Tan, B. Fallahazad, H.
Ramanarayan, C. W. Magnuson, E. Tutuc, B. I. Yakobson, K. F. McCarty, Y. W. Zhang, P. Kim, J. Hone, L.
Colombo, and R. S. Ruoff. Science, 342, 720-723 (2013).
Corresponding Author: R. S. Ruoff
Tel: +82 52 217 5505
E-mail: ruofflab@gmail.com
http://cmcm.ibs.re.kr/html/cmcm_en/

-1-1-

1S-2

Floating catalyst CVD synthesis of non-bundled SWNTs with narrowchiral angle distribution
Esko I. Kauppinen
Department of Applied Physics, Aalto University School of Science
Puumiehenkuja 2, P.O. Box 16100, FI-00076 Aalto, FINLAND

esko.kauppinen@aalto.fi
We report recent studies on the synthesis of high quality, narrow helical distribution
single walled carbon nanotubes from CO with a ferrocene-based floating catalyst
chemical vapor deposition (FC-CVD) reactor and show that SWNT networks consistingof long, clean and highly individualized SWNTs exhibit substantially improved
transparent conducting film (TCF) performance [1]. Patterned SWNT films show
record high conductivity of 67 Ω/☐ at 97 % transmittance. In addition, we present
recent studies on novel floating catalyst synthesis route for individual, i.e. non-bundled,
small diameter single-walled carbon nanotubes (SWCNTs) with narrow chiral angle
distribution close to armchair [2]. An ex situ spark discharge generator was used to form
iron particles with geometric number mean diameters of 3-4 nm and fed into a laminarflow chemical vapor deposition reactor for the continuous synthesis of long and highquality SWCNTs from ambient pressure carbon monoxide. The Raman G/D intensity
ratios up to 48 and mean tube lengths up to 4 μm were observed. The chiral, i.e. (n,m)
distributions, as directly determined by electron diffraction in the transmission electron
microscope clustered around (7,6), (8,6), (8,7) and (9,6) tube species with up to 70% of
tubes having chiral angles of 20° or greater. The tube mean diameter was reduced from
1.10 to 1.04 nm by reducing the growth temperature from 880 to 750 °C,
simultaneously increasing the fraction of semiconducting tubes from 67 to 80%.
Limiting the nanotube gas phase number concentration to ~105 cm-3 successfully
prevented nanotube bundle formation due to collisions induced by Brownian diffusion.
Up to 60-80 % of the total of 500 as-deposited tubes observed by atomic force andtransmission electron microscopy were individual. Tube growth mechanisms are
discussed based on detailed HR-TEM analyses of active and non-active catalyst
particles. Transparent conducting films directly deposited from individual tubes
exhibited a record low sheet resistance of 63 Ω/☐ at 90 % transparency with 550 nm
wavelength.
[1] A. Kaskela et al. (2015). Submitted.
[2] K. Mustonen et al. (2015) Appl. Phys. Lett. 107, 013106.

-2-2-

1S-3
Unique properties of nanocarbon materials revealed
by in situ TEM and FEM
Yuji Shinomiya, Noboru Yokoyama, Koji Asaka, Hitoshi Nakahara, ○Yahachi Saito
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan

Nanocarbon materials such as carbon nanotube (CNT) and graphene are potential
candidates for various active and passive elements for future nanoscale electronic devices.
In order to realize the applications of nanocarbon to such devices, it is required to clarify
physical properties of individual nanomaterial. We have studied electrical properties of CNT
and graphene by in situ transmission electron microscopy (TEM), and electron emission
properties by field emission microscopy (FEM). Here, electrical properties of multiwall
carbon nanotube (MWCNT) and field emission properties of graphene revealed by in situ
TEM and by FEM are reported.
For the measurement of electrical resistance of a MWCNT bridged between Au and Mo
electrodes, inner shells were successively retracted into the Mo electrode during electric
current application, and the change in the electrical resistance of MWCNT corresponding to
the retraction was observed, indicating that the inner shells contribute to the electricalconduction. From the dependence of resistance on the area of contact region between the
inner-shell being retracted and the adjacent outer-shell, the inter-shell conductance wasestimated to [0.3- 0.5 kΩ]-1/µm2.
In the study of field emission from nanocarbon materials, intriguing FEM images,
indicating sub-nanometer sized structures of emitting sites, have been observed. Graphene
emitters with free edges (i.e., open edges) show a striped pattern (we dubbed a “lip pattern”);
the direction of striations is perpendicular to the graphene sheet, and each stripe are divided
into two wings due to a dark band which runs perpendicular to the striation in the center ofpattern, as shown in Fig. 1. The pattern indicates coherent interference of electrons fromelectron orbitals at the graphene edges. When aluminum was deposited on the graphene
emitter, FEM images of atomic clusters of aluminum were observed as shown in Fig. 2(a).
The image, showing atomic resolution, indicates that the structure of the cluster has a shape oftruncated octahedron as illustrated in Fig. 2(b). Similar images of polyhedral Al clusters
have also been observed for Al-deposited CNT emitters [1].
(a)Fig. 1 FEM image of graphene(b)Fig. 2 (a) FEM image and (b) structure model of an Al cluster[1] K. Nakakubo, K. Asaka, H. Nakahara and Y. Saito, Appl. Phys. Exp. 5, 055101 (2012)
Corresponding Author: Y. Saito
Tel: +81-52-789-4459, Fax: +81-52-789-3703, E-mail: ysaito@nagoya-u.jp

-3-3-

2S-4
Graphene and beyond: Attraction, Reality and Future
Zhongfan Liu
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons,
College of Chemistry and Molecular Engineering, Peking University, Beijing 10087, China
The gold rush of graphene research has passed over ten years history since its first isolationin 2004, which ignited one’s enthusiasm on 2D materials such as h-BN, transition metal

dichacogenides, graphynes, silicene, germanene, phosphorene, etc. We have been focusing ourresearch interests on the growth issue of these kinds of 2D atomic crystals together with 2D chemistry.
Our research activities up to now involve CVD growth of graphene and its hybrid structures, MoS 2,
h-BN, Bi2Se3, Bi2Te3, GaSe, etc. By rationally designing the growth catalysts and the elementary steps
in the growth process, we have been able to make a precise control of graphene layer number, stacking
structures, doping, wrinkle structures and even bandgaps by hybridization with different 2D materials.
This talk will present our recent progresses along this direction. A particular focus will be laid on
growing graphene on wide-gap semiconducting substrates such as h-BN and high k strontium titanate,
and on groups IVB-VIB early transition metal foils together with the designed growth of mosaic
graphene, an in-plane graphene superlattice with other 2D atomic crystals. The talk will also include
our recent efforts beyond graphene, focusing on the synthesis of novel 2D atomic crystals using vander Waals epitaxial technique.
1.
2.
3.
4.

5.

JY Sun, ZF Liu et al., Direct Growth of High-Quality Graphene on High‑κ Dielectric SrTiO3
Substrates，J. Am. Chem. Soc. 136, 6574(2014).
Y Kai, ZF Liu et al., Modulation-doped growth of mosaic graphene with single-crystalline p-njunctions for efficient photocurrent generation, Nature Commun. 3, 1280(2012).
CH Zhang, HL Peng, ZF Liu et al., Direct growth of large-area graphene and boron nitride
heterostructures by a co-segregation method, Nature Commun., 6, 6519(2015).
T Gao, XJ Song, HW Du, YF Nie, YB Chen, QQ Ji, JY Sun, YL Yang, YF Zhang, ZF Liu,
Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron
nitride heterostructures, Nature Commun., 6,6835(2015).
K Yan, L Fu, HL Peng, ZF Liu, Designed CVD Growth of Graphene via Process Engineering,
Acc. Chem. Res., 10, 2263 (2013).

-4-4-

2S-5
Spectroscopic analysis on electrochemical oxidation reaction of
single-walled carbon nanotubes
Masato Tominaga*1,2
1

Graduate School of Science and Technology, Kumamoto University,
Kumamoto 860-8555, Japan
2
Kumamoto Institute for Photo-Electro Organics (Phoenics),
Kumamoto 862-0901, JapanThe oxidative corrosion of carbon is an urgent problem because carbon is widely used as aplatform electrode to immobilize catalysts. One of the factors in the gradual decrease of
output power in fuel cells such as a polymer electrolyte fuel cell is the oxidative corrosion of
the carbon supports. The oxidative corrosion of carbon is a complicated process that includes
parallel oxidation pathways. Furthermore, the electrochemical oxidation reaction of carbon bywater molecules occurs at a much more negative potential than that thermodynamically
expected, although the rate of this reaction is very slow:
C + 2H2O = CO2 + 4H+ + 4e0.207 V vs. NHE.
Understanding the mechanism of nucleation and growth in oxidative corrosion at thesurface of sp2-carbon is important for advancing its application. A considerable amount ofelectrochemical research has been directed towards elucidating the mechanism of theoxidation of the hexagonal plane sp2 carbon family, such as highly oriented pyrolytic graphite(HOPG), carbon nanotubes and graphene as model reaction systems. Recently, a number ofstudies using ab initio molecular orbital calculations have focused on the oxidation steps ofhexagonal plane sp2 carbons. However, the detailed oxidation mechanism of such sp2 carbons
is still unclear. We recently reported the oxidative
corrosion potential vs. pH diagram for single-walledcarbon nanotubes (SWCNTs) [1]. The current Raman
spectroscopic studies based on the encapsulation ofβ-carotene into SWCNTs revealed that there are three
types of oxidative corrosion of SWCNTs:
non-oxidized, end-cap oxidized, and side-walloxidized SWCNTs (Fig. 1). Adsorbed molecularoxygen affects nucleation and growth in theelectrochemical oxidative corrosion of SWCNTs in
an aqueous electrolyte [2]. We have been
investigating diameter-dependent onset potential forthe oxidation reaction of SWCNTs in various aqueous
solutions [3]. Knowledge of the onset oxidation
potential of SWCNTs gives insight into the oxidative
corrosion reactions of sp2 carbons.
[1] M. Tominaga et al. RSC Adv., 4, 27224 (2014).
[2] M. Tominaga et al. RSC Adv., 4, 53833 (2014).
[3] M. Tominaga et al. Chem. – Asian J., 8, 2680 (2013) .
* M. Tominaga
Tel: +81-96-342-3655, F+81-96-342-3655,
E-mail: masato@gpo.kumamoto-u.ac.jp-5-5-Fig. 1 Raman spectra of SWCNTs after
controlled-potential electrolysis followedby β-carotene encapsulation treatment.

3S-6
Thirty Years after C60 Discovery and Fifteen Years after Detonation
Nanodiamond Rediscovery
Eiji Ōsawa
NanoCarbon Research Institute, AREC, Faculty of Fiber Science and Engineering, Shinshu
University, 3-15-1 Tokida, Ueda, Nagano, Japan
Two topics will be briefly introduced to commemorate the 30 years’ anniversary of C60
discovery, which literally changed the research interests in many of us in a day. Naturally weare greatly concerned on the reason why fullerene fever declined. My personal opinion is that
we rushed too fast for their applications before we understood the formation mechanism,
which is still incomplete [1]. For this reason, recent discovery of 1020 tons (estimated) of
C60+C70 in Planetary Nebula Tc1 by NASA Spitzer Space Telescope equipped with IR
spectrometer attracted our attention with regard to their formation mechanism in outer space[2,3]. The conditions of fullerenes formation in outer space are comparable to those set up by
Irle for QM(NCC-DFTB)/MD simulation of C60 formation from C2 [4]. Irle is the first to haveproposed that the formation of fullerenes should follow Prigogine’s chaos physics underirreversible and non-equilibrium conditions. This is highly likely proposal in view of a large
number of chemical mechanisms that failed. We will mention possible participation of giant
fullenes up to C350 in the final stage of C60 formation by the chaotic mechanism, taking into
accounts of Daedelus’ daydream [5] and the Maruyama-Smalley experiments carried out inthe early period after the C60 discovery [6].
In contrast to fullerenes, mechanism of diamond crystallization is such a well-known
matter that 3nm diamond, the primary particle of detonation nanodiamond (PPDND) and ourpresent major target [7], may appear an easy material. However, the truth is that it was so
difficult that for about half a century after its early discovery in 1963 it was left unexplored. It
is only recent that fundamental structure and properties finally disclosed and intensive
world-wide research activities began [8]. In the lecture we will disclose surprising structuraland electronic features of PPDND and mention peculiar behaviors of the first archetypal
nanocarbon particle, including important of modelling, extremely high number density effectsof single-nano particles, invalidation of purity supremacy, quantization limits, and the mostenigmatic phenomenon that occur in its colloidal solution that we named ‘dispersion uponconcentration, aggregation upon dilution’ [9]. The last mentioned phenomenon is due toabnormally strong hydration [10] and provides a good manifestation of colloidal crystals [11].
A few examples of grand-scale applications of PPDND under intensive developments will
also be mentioned.
[1] Ōsawa, E. Fullerenes, Carbon Nanotubes and Related Nanocarbons, 2012, 20, 299. [2] Cami, J. et al.
Science, 2010, 329, 1182. [3] See also: Garcia-Hernandez, D. A. et al., Astrophys. J. Lett. 2012, 760, 107. [4]Irle, S.; Zheng, G.; Wang, Z.; Morokuma, K. J. Phys. Chem. B, 2006, 110, 14531. [5] D. E. H. Jones, ‘The
Invention of Daedalus’, W. H. Freeman, Oxford, 1982, p. 118. [6] Maruyama, S.; Anderson, L. R.; Smalley, R.
E. Rev. Sci. Instrum. 1990, 61, 3686. [7] Ōsawa, E. New Diamond, 2013, April Issue, p. 10. [8] Krueger, A. J.
Mater. Chem. 2012, 21, 12571. [9] Ōsawa, E. Ukr. J. Phys. submitted for publication. [10] Petit, T. et al. J. Phys.
Chem. Lett. 2015, 6, 2909. [11] Mchedlov-Petrossyan, N. et al., Phys. Chem. Chem. Phys. 2015, 17, 16186.
Corresponding Author: E. Ōsawa, Tel: +81-268-75-8381, Fax: +81-268-75-8551, E-mail:osawa@nano-carbon.jp

-6-6-

3S-7

Nano-Carbon Interconnect Technologies for LSIs:
Important Considerations of Edge Control○Yuji Awano1
1 Department of Electronics and Electrical Engineering, Keio University,

Yokohama 231-0862, Japan

Nano-carbon materials, such as carbon nanotubes (CNTs) and graphene, have attracted
attention as promising emerging research materials (ERMs) for future electron devices, inparticular, ones to replace Cu in the next generation of Si LSI interconnects because of theirhigh electron mobility and high electro- migration tolerance [1–4]. In Japan, technologies for
CNT vertical interconnects were developed in the MIRAI project (2006–2010) [1], while
technologies for graphene interconnects were developed or are being developed in someprojects: the green nano-electronics center (GNC) project (2010–2014) [5,6] and the
Ultra-Low Voltage Device Project (2010-2016) [7-9]. In this talk, we report on these advancesand on future prospects of CNT and graphene interconnect technologie. In the sessions on
interconnect technology and ERM of the International Technology Roadmap of
Semiconductors (ITRS), the strong needs and difficult challenges of these materials werementioned [10]. One of the most important challenges is edge control of nano-carbon
materials. With the minimum feature size of LSI interconnects getting smaller, manufacturing
variants, such as edge roughness, cannot be avoided as long as lithography and dry etchingprocesses are used. Theoretical calculations have predicted that electrical properties ofgraphene nanoribbons (GNRs) are strongly affected by edge roughness [11, 12]. In order toobtain a higher current reliability in CNT vertical interconnects (vias), it has become
increasingly important to increase the number of current paths, not only by increasing the
CNT density but also by further improving the CNT contacts with the metal electrodes or thehorizontal metal lines [13]. Regarding ohmic contact formation between nano-carbon andmetal materials, the edge-contact configuration, in which a metal electrode comes into contact
with the edges of the graphene layers, can significantly reduce the contact resistivity becauseof a higher cohesive energy at the interface between the metal and carbon atoms, comparing
with a conventional side-contact configuration [14].
Acknowledgement
This work was partly performed as “Ultra-Low Voltage Device Project" funded andsupported by the Ministry of Economy, Trade and Industry (METI) and the New Energy andIndustrial Technology Development Organization (NEDO).
References[1] Y. Awano et al., Proc. of the IEEE, 98-12, p. 2015 (2010), [2] N. Srivastava et al., IEDM2005, p.257 (2005),[3] X. Chen et al., IEEE ED-57, 11, p. 3137 (2010), [4] A. Naeemi et al., IEEE EDL28, p. 428 (2007), [5] S.
Sato, IEEE IITC 2015, p. 313 (2015), [6] D. Kondo et al., IEEE IITC 2014, p. 189 (2014), [7] T. Sa kai et al.,ADMETA 2013 (2013), [8] A. Isobayashi et al., A DM ETA 2014, (2014), [9] T. Ishikura et al., IEEE IITC 2015,
p. 321 (2015), [10] http://www.ITRS.net/, [11] K. Takashima et al., Appl. Phys. Lett. 104, 093105 (2014), [12]K. Yabusaki et al., IEEE IITC 2015 (2015), [13] M. Sato et al., JJAP 49, 105102 (2010), [14] K. Ito et al.,Applied Physics Express 8, 025101 (2015)
Tel: +81-45-566-1506, Fax: +81-45-566-1506, E-mail: awano@elec.keio.ac.jp

-7-7-

3S-8
Control of Physical Properties of Single Wall Carbon Nanotubes
by Electric double layer carrier injections○Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
Single wall carbon nanotubes (SWCNTs) have sharp van-Hove singularities in theirdensity of states reflecting their one-dimensional nature. Progress of purification techniques
has enabled us to clarify the physical properties of high-purity metallicity or chirality selected
SWCNTs, and the physical properties strongly depend on the shape of density of states andthe location of Fermi level. We have revealed that the physical properties can be tuned byelectro-chemical doping (electric double layer carrier injections) techniques. Electrochemical
doping techniques have been widely used for carrier injections on SWCNTs since 2001,1 andwe have revealed that the techniques are very suitable for control of various physicalproperties of high-purity metallicity or chirality selected SWCNTs because its precise
tunability of Fermi level.2-6 For example, SWCNTs show various colors depending on theirchiralities, and the colors were controlled by carrier injections through electric double layers
using ionic liquids.2 The capacitance line-shape as a function of applied voltages indicate
clear peak structures due to the van-hove singularities, thus we confirmed that the Fermi levelcan be shifted to approximately ± 1 eV by this techniques.6 In addition, when the carriers areaccumulated in high-density in SWCNTs, a new optical absorption band was formed aroundthe 1 m wavelength region. As the increase of the density of injected carriers, the peak of the
new band blue shifted and its intensity increased.6 We recently identified that the new band
was caused by the formation of the transverse surface plasmon mode, which was normal to
the nanotube axis.6 Not only optical properties but also thermoelectric properties can becontrolled by precise tuning of Fermi level.5 Thermoelectric properties are a very important
technology to efficiently convert waste heat into electric power. Hicks and Dresselhaus haveproposed an important approach to innovate the performance of devices.7 They indicated theimportance to use one-dimensional materials, and to tune their Fermi level properly because
Seebeck coefficients are strongly influenced by the line-shape of density of states and locationof Fermi level. We found that the Seebeck coefficients of SWCNTs were also precisely
controlled by the carrier injections through electric double layers. We observed clear peakstructures of Seebeck coefficient in the p-type and n-type regions in the semiconducting
SWCNTs with diameter of 1.4 nm,5 and the absolute values of the Seebeck coefficient of boththe p-type and the n-type can be enhanced to more than 100 V K-1, indicating the importanceof precise tuning of the Fermi level.
[1] S. Kazaui et al., Appl. Phys. Lett. 78 3433 (2001), Kavan et al., J. Phys. Chem. B 105, 10764 (2001) [2] K.
Yanagi et al., Adv. Mater. 23, 2811 (2011), [3] M. Kawai, K. Yanagi et al., J. Am. Chem. Soc. 134, 9545 (2012),[4] K. Yanagi et al., Phys. Rev. Lett. 110, 86801 (2013) [5] K. Yanagi et al., Nano Lett. 14, 6437 (2014) [6] T.
Igarashi, K. Yanagi et al. Phys. Rev. Lett. 114, 176807 (2015) [7] Hicks & Dresselhaus, Phys. Rev. B 47, 16631(1993)
Corresponding Author: K. Yanagi,
Tel: +81-42-677-2494, E-mail: yanagi-kazuhiro@tmu.ac.jp

-8-8-

一般講演
General Lecture

1 – 1 ～ 1 – 14
2–1 ～ 2–7
3 – 1 ～ 3 – 12

1-1
Electrical properties of graphene synthesized
by low temperature plasma techniques○T. Yamada, Y.Okigawa, M. Ishihara, H. Kato and M. Hasegawa
National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8565, Japan
Low temperature synthesis of graphene is one of the most important technologies forpractical applications using graphene. Plasma CVD techniques are expected to reduce
temperature [1], however high sheet resistances and small flake sizes are still remaining issues[2]. We reported relatively low sheet resistances of graphene synthesized by plasma treatmentsof PMMA [3]. In order to improve the electrical properties of graphene obtained by low
temperature plasma techniques, the relationship between the electrical properties and theRaman spectrum are examined.

Tow kinds of graphene films obtained by plasma CVD (sample#1) using CH4 as a carbon
source and plasma treatments of PMMA (sample#2) were examined by Hall effectmeasurements and Raman signal mappings. Both graphene were transferred onto SiO2/Si
substrate. Squares (30x30 µm2) were patterned by photolithography and oxygen plasma, andthen Ti/Au electrodes were deposited on four corners by EB deposition The Hall effectmeasurements were carried out in the temperature range between 80 to 450K in He
atmosphere. Raman spectroscopy was used to characterize the film qualities of the areas ofHall effect measurements. Raman signal mappings were measured at 1x1µm grid points in thex-y plane. A laser of 532nm wavelength was used to excite and the spot size was 1µm in
diameter.
Both graphene showed p-type conduction in the measured temperature ranges. Week
temperature dependence of the hole mobility of sample#2 are confirmed, while hole mobilityof sample#1 is increased with increasing temperatures. The highest hole mobility of sample#1 was 18 cm2/Vs at 450K and the highest hole mobility was 710 cm2/Vs at 300K for
sampe#2. The obtained results indicated that carrier transport mechanisms were different for
two samples. For the results of Raman characterizations, IG/ID ratios of sample#1 were
between 1 and 8, while those of sample #2 were less than 1. Peak positions of 2D bands forsample #1 are between from 2658 to 2670cm-1, while those of sample#2 are in the range 2650
and 2665cm-1. It is considered that sample#2 is consisted of large size domain with small
strain. It is found that there are strong relationships between Hall effect results and Raman
characterizations. It is considered that the obtained results are attributed to the difference indecomposition of CH4 and PMMA by the low temperature plasma.

This work was partially supported by a JSPS Grant-in-Aid for Scientific Researchon Innovative Areas “Science of Atomic Layers.
[1] T. Yamada et al. J. Phys. D 46, 063001 (2013).
[2] Y. Okigawa et al., Appl. Phys. Lett. 103, 153106 (2013)[3] T. Yamada et al., Appl. Phys. Exp. 6, 115102 (2013)
Corresponding Author: T.Yamada
Tel: +81-29-861-3851, Fax: +81-29-861-4522,
E-mail: takatoshi-yamada@aist.go.jp- 10 - 10 -

1-2
Formation mechanism of anisotropic cracks
in graphene grown on copper foil
○Miho Fujihara1, Ryosuke Inoue2, Rei Kurita2, Toshiyuki Taniuchi3, Yoshihito Motoyui3,
Shik Shin3, Fumio Komori3, Yutaka Maniwa2, Hisanori Shinohara1, Yasumitsu Miyata2,41

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
3
Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan
4
JST, PRESTO, Kawaguchi, 332-0012, Japan
2

Graphene edges have attracted much attention due to its unique electrical and magnetic
properties depending on their edge structures. To understand their properties, it is highly
desired to prepare clean, smooth, and structure-controlled edges. Recently, our group reported
the preferential formation of zigzag edges in graphene cracks.[1] These cracks can beobserved for as-prepared graphene films grown on Cu foil by chemical vapor deposition.
However, the formation mechanism of such cracks is still unclear because graphene was justcooled after the growth and no tension was artificially imparted during the cooling process.
Furthermore, Raman analysis indicates the presence of compressive strain in graphene atroom temperature due to the thermal shrinkage of Cu substrate.
Here, we demonstrate that the transient lattice expansion could be generated in specific Cu
grains during cooling process.[2] From optical microscope observations, we find that thecracks are preferentially formed in graphene grains on narrow Cu (100) face surrounded by
Cu (111) faces (Fig.1a). Statistical analysis of visual observations indicates that the crack
formation results from the stress concentration of uniaxial tension at notches in thepolycrystalline graphene films. Based on simulation results using a simplified thermal
shrinkage model, we propose that the cooling-induced tension is derived from the transientlattice expansion of narrow Cu grains imparted by the thermal shrinkage of adjacent Cu grains(Fig. 1b). The simulation also predicts that Cu could shrink uniformly after the adequate time,
which is consistent with the observed upshift of G- and 2-D band Raman modes. The present
results provide an insight into fabricating long, smooth zigzag edges in graphene and othertwo-dimensional materials.

Fig.1: (a) Optical image of anisotropic cracks in graphene on copper foil. (b) Schematic illustration of the
proposed mechanism of crack growth by transient lattice expansion of Cu (100) face.
[1] M. Fujihara et al. The 48th FNTG Symposium (2015). [2] M. Fujihara et al. submitted.
Corresponding Authors: Y. Miyata, H. Shinohara
Tel: +81-42-677-2508, +81-52-789-2482, E-mail: ymiyata@tmu.ac.jp, noris@nagoya-u.jp- 11 - 11 -

1-3Large scale synthesis of densely-aligned suspended graphene nanoribbons
array by plasma CVD○Hiroo Suzuki, Toshiaki Kato, and Toshiro Kaneko
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Graphene nanoribbons (GNRs) combine the unique electronic and spin properties ofgraphene with a transport gap that arises from quantum confinement and edge effects. This
makes them an attractive candidate material for the channels of next-generation transistors.
Although GNRs can be made in a variety of ways, the reliable site and alignment control of
GNRs with high on/off current ratios remains a challenge.
Up to now, we developed a novel method based on the advanced plasma CVD method [1]with nano scale Ni catalyst (Ni nanobar) for directly fabricating suspended GNRs devices [2].
However, the growth yield of suspended GNRs is low and understanding the growthmechanism is required to solve this problem. In this study, we found that the stability of Ni
nanobar can be drastically improved
during plasma CVD. Since GNR nucleates
during the cooling process, the Ni nanobar
structure has to be maintained even under
the high temperature condition (just before
cooling) for the growth of suspended GNR.
Our experimental results show that thehigh rate supply of carbon species into Ni
during plasma CVD can improve thethermal stability of Ni nanobar under thehigh temperature condition. Furthermore,
phase separation between graphene and Ni
happens during the cooling process, which
accelerates the destabilization of Ni
nanobar, resulting in the formation ofsuspended GNR (Fig. 1(a)). By following
this growth model, precise adjustment ofplasma CVD conditions was carried out.
As a result, the yield of suspended GNR Fig.1: (a) Schematic images of formation mechanism ofgrowth can be improved (～90%) and the suspended GNR during cooling. (b) Typical scanninghigh density GNRs array has been electron microscope image (inset shows the G band
intensity mapping of Raman spectra) and (c) histogram
successfully fabricated in large scale (Figs. of GNR growth yield.
1(b), 1(c)).
[1] H. Suzuki, T. Kato and T. Kaneko, Plasma and Fusion Res. 9, 1206079 (2014).
[2] T. Kato and R. Hatakeyama, Nat. Nanotechnol. 7, 651 (2012).
Corresponding Author: H. Suzuki
Tel: +81-22-795-7046
E-mail: suzuki12@ecei.tohoku.ac.jp- 12 - 12 -

1-4
Relationship between growth rate and catalyst lifetimeon carbon nanotube forest synthesis○Naoyuki Matsumoto1,2, Guohai Chen1, Robert C. Davis3, Hiroe Kimura1,
Shunsuke Sakurai1,2, Motoo Yumura1,2, Don N. Futaba1,2, Kenji Hata1,2
1Technology Research Association for Single Wall Carbon Nanotubes (TASC), Central 5,
1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
2
National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1
Higashi, Tsukuba, Ibaraki 305-8565, Japan3
Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602, USA.
Generally, there are two dominant competing processes during carbon nanotube (CNT)synthesis: CNT growth and catalyst deactivation. The carbon feedstock will affect bothprocesses, because a fraction will contribute to the synthesis, reflecting in the growth rate, andthe remaining unused fraction will contribute to the deactivation of the catalyst throughcarbon coating, i.e. the catalyst lifetime. Therefore, from this standpoint, the growth rate andlifetime are expected to be fundamentally inversely related. This point is empirically known
as observed by the results mentioned above [1-3]. However, the inverse relationship itself has
yet to be studied.
In this work, we report an inverse relationship between the CNT growth rate and catalyst
lifetime by investigating the dependence of growth kinetics for ~330 CNT forests and thedependence on carbon feedstock, carbon concentration, and growth temperature. We foundthat increased growth temperature led increased CNT growth rate and shortened catalyst
lifetime for all carbon feedstocks, following an inverse relationship of fairly constantmaximum height. For increased carbon concentration, the carbon feedstocks fell into twogroups where ethylene / butane showed increased/decreased growth rate and decreased /increased in lifetime indicating different rate-limiting growth processes. In addition, thisinverse relationship held true for different types of CNTs synthesized by varied chemical
vapor deposition techniques and continuously spanned 1000-times range in both growth rateand catalyst lifetime, indicating the generality and the fundamental nature of this behavior
originating from the growth mechanism of CNTs itself. These results suggest it would be
fundamentally difficult to achieve a fast growth with long lifetime.
This study is based on results obtained from a project commissioned by the New Energy
and Industrial Technology Development Organization (NEDO).
[1] G. F. Zhong et al. J. Phys. Chem. B 111, 1907 (2007).
[2] S. P. Patole et al. Appl. Phys. Lett. 93, 114101 (2008).
[3] G. H. Chen et al. Nanoscale. 7, 8873, (2015).

Corresponding Author: Don N. Futaba
Tel: +81-29-861-4654, Fax: +81-29-861-4851
E-mail: d-futaba@aist.go.jp- 13 - 13 -

1-5
Control of bioreactions in living organisms
by carbon nanotube supramolecular nanohybrids○Eijiro Miyako1, Svetlana A. Chechetka1, Motomichi Doi2, Eiji Yuba3, Kenji Kono3
1

Department of Materials and Chemistry, Nanomaterial Research Institute (NMRI), National
Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi,
Tsukuba 305-8565 (Japan)
2
Department of Life Science and Biotechnology, Biomedical Research Institute (BRI) &DAILAB, AIST, Central 6, 1-1-1 Higashi, Tsukuba 305-8566 (Japan)
3
Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture
University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan)

There is currently great interest inunderstanding and achieving remote
operation of functional nanorobots[1–4] inphysiological environments. We developedacarbonnanotube–liposome-based
supramolecular nanohybrid[1] capable ofpermeation through cells with highbiocompatibility. The nanohybrid can beloaded with a variety of functional
molecules and is structurally controlled bynear-infrared laser irradiation for the
release of molecules from the nanohybrids
in a targeted manner via microscopy. We
implemented the controlled release ofmolecules
fromnanohybrids
anddemonstrated their efficacy in remoteregulation of photo-induced nanohybrid
functions. As a proof of principle,
nanohybrids loaded with drugs weresuccessfully used in spatiotemporal
blocking of targeted channel proteins inliving Caenorhabditis elegans (C. elegans).
Our prototype could inspire new designs
with biomimetic parasitism and symbiosis
and biologically active nanorobots forhigher-level manipulation of organisms.

Fig.1: (a) Schematic illustration ofcarbon nanotube supramolecular nanohybrid.
(b) Remote control of bioreactions
in living C. elegans
by laser-induced nanohybrids.

[1] E. Miyako et al. Angew. Chem. Int. Ed. in press (2015).
[2] E. Miyako et al. Angew. Chem. Int. Ed. 53, 13121 (2014).
[3] E. Miyako et al. Nature Commun. 3, 1226 (2012).
[4] E. Miyako et al. Proc. Natl. Acad. Sci. USA 109, 7523 (2012).
Corresponding Author: E. Miyako
Tel: +81-87-869-3574, Fax: +81-29-861-4413,
E-mail: e-miyako@aist.go.jp- 14 - 14 -

1-6
○Kazuya Matsumoto, Takuro Takahashi, Mitsutoshi Jikei

Dispersion techniques of carbon nanotubes (CNTs) are quite important to utilize CNTs fornanoapplications. Although the physical modification is a useful CNT dispersion technique,organic dispersants often remain as electrical insulating impurities. Recently, we have foundthat inorganic salts act as dispersants of CNTs and give CNT dispersions in common organic
solvents. In this study, we examined the favorable combination of inorganic salts and organic
solvents as well as the dispersion mechanism.

Fig. 1: Dispersion of SWCNT using inorganic salts

Singlewalled carbon nanotubes (SWCNTs) weredispersed in organic solvents using inorganic salts bysonication (Fig. 1). As a result, weak acid salts suchas potassium carbonate and tripotassium phosphate(K3PO4) dispersed SWCNTs effectively. On the other
hand, strong acid salts such as potassium chloride andpotassium nitrate did not work as dispersants (Fig. 2).
Among organic solvents, relatively low polar solvents
such as tetrahydrofuran (THF) were suitable for
SWCNT dispersion. We evaluated the amount of
K3PO4 attached on the SWCNT wall by ion Fig. 2: The amount of dispersed SWCNT
chromatography. The attached K3PO4 was determined
as 0.17 wt% with respect to the SWCNT weight. This
result clearly indicates that inorganic salts work as Table 1: Zeta potentials of SWCNT
dispersants in only a small amount compared to dispersions in THF
conventional organic dispersants.
   In order to examine dispersion mechanism, we


measured zeta potential of the SWCNT dispersion in
THF using inorganic salts. The zeta potential results


are summarized in Table 1. The SWCNT dispersions
exhibited zeta potential values of about 0 m, which indicates that the CNT surface isnegatively charged and the anion parts of the inorganic salts are attached on the CNT surface.
The electrostatic repulsion between negatively charged CNTs would play a key role in the
CNT dispersion using inorganic salts.
Corresponding Author: K. Matsumoto,TelFax: 11274, mail: kmatsugipc.akitau.ac.p- 15 - 15 -

1-7
Lattice vibration in isotopic superlattice of carbon nanotubes○Susumu Saito1-3, Yuki Bando1
1

Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
2
International Research Center for Nanoscience and Quantum Physics,
Tokyo Institute of Technology, Tokyo 152-8551, Japan
3
Materials Research Center for Element Strategy, Tokyo Institute of Technology,
Yokohama, Kanagawa 226-8503, Japan
Isotopic superlattice of diamond consisting of 12C and 13C diamond layers has been
produced and its interesting electronic properties including the carrier confinement to the 12C
layers have been reported [1]. Because of the strong electron-phonon interaction incarbon-based materials, the fundamental-gap value of diamond is found to depend sensitively
on the isotopic composition of 12C and 13C atoms [2], and it should result in the carrierconfinement in the isotopic diamond superlattice. Therefore, it is of high interest to study theisotopic superlattice of carbon nanotubes which may possess unique vibrational and electronic
properties being different from those of carbon nanotubes of natural isotopic abundance. In
this study, we report the vibrational properties of isotopic superlattice of carbon nanotubes
studied by using the density-functional perturbation theory.
We consider the (6,6) armchair nanotube, which consists of alternatively stacked n layers
12of C and 13C, and is now named as {n, n} nanotube superlattice. Its unit cell is shown in the
figure below. The lattice vibration of this carbon nanotube suprelattice is then analyzed byutilizing the Fourier transformation and inverse Fourier transformation procedure for the
dynamical matrix of the isotopically controlled superlattice [3]. We analyze the details of then-dependence of the so-called radial breathing mode (RBM). It is found that the spatial
distribution of the mode amplitude is not uniform anymore but sensitively depends on theposition from the 12C/13C boundary as well as on the isotope mass of the site considered.

[1] H. Watanabe, C. E. Nebel, and S. Shikata, Science 324, 1425 (2009).
[2] H. Watanabe, T. Koretsune, S. Nakashima, S. Saito, and S. Shikata, Phys. Rev. B 88, 205420 (2013)[3] Y. Bando and S. Saito, to be published.
Corresponding Author: S. Saito
E-mail: saito@stat.phys.ttiech.ac.jp
Fax: +81-3-5734-2739- 16 - 16 -

1-8
Analytical transmission electron microscopy of water encapsulated insingle-wall carbon nanotubes at 97 K
○Keita Kobayashi1, Ryosuke Kuroiwa2, Yasuda Hidehiro1,2
1

Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1,
Mihogaoka, Ibaraki, Osaka 567-0047, Japan
2
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka
University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan
Water exhibits polymorphic structures depending on temperature and pressure, and so
novel phases in various environments have been investigated to discover new structures andclarify the properties of water. It has recently been reported that water encapsulated withinsingle-wall carbon nanotubes (SWCNTs) exhibits a unique tubular crystalline structure, basedon results of molecular dynamics simulation, X-ray diffractometry, and nuclear magnetic
resonance spectroscopy [1,2]. Moreover, the studies have shown that the structure of
crystalline water depends on SWCNT diameter [2], suggesting that the size and dimensions ofconfining spaces in nanomaterials affect the phase transitions of encapsulated materials.
However, these findings were obtained through simulation and interpretation of macroscopic
structural analysis, not direct microscopic observation of structures. To accurately determine
the structure of water encapsulated in SWCNTs and elucidate its phase transitions, direct
structural analysis of the water by analytical transmission electron microscopy (TEM) is
needed.
Accordingly, in this study we performed structural analysis of water encapsulated in
SWCNTs by TEM, transmission electron diffractometry (TED), and electron energy loss
spectroscopy (EELS) at a low temperature (97 K).
Figure 1 shows EELS spectra of a crystalline
water (ice) nanoparticle, water encapsulated in
SWCNTs with diameter of 1.2 nm, and aliquid–vapor mixture of water [3] in the oxygen
K-shell region. Although a distinct crystal
structure of water was not found by TEM or TEDof the SWCNTs, the EELS spectrum contained
an unequivocal oxygen signal. The spectral
structure of the water in the SWCNTs wasdifferent from that of the ice nanoparticle but
analogous to that of the vapor–liquid mixture ofwater. These results might indicate that water Fig. 1: EELS spectra of (a) a crystalline ice
nanoparticle, (b) water encapsulated inencapsulated
inthe
SWCNTshas
an SWCNTs, and (c) a liquid-vapor mixture ofamorphous-like disordered structure.
water[1] Y. Maniwa et al. J. Phys. Soc. Jpn. 71, 2863 (2002).
[2] Y. Maniwa et al. Chem. Phys. Lett. 401, 534 (2005).
[3] G. Algara-Siller et al. Nature 519, 443 (2015).
Corresponding Author: K. Kobayashi
Tel: +81-6-6879-7941, Fax: +81-6-6879-7942,
E-mail: kobayashi-z@uhvem.osaka-u.ac.jp- 17 - 17 -

1-9Magnetic properties of nano metals○Hidetsugu Shiozawa
1

Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria

Unique physical properties emerge when matters are organized in small dimensions. Our
research is focused on studies of electronic and magnetic properties of atoms and moleculesthat are naturally arranged in low dimensions within the interior of carbon nanostructures[1-3]. For instance, molecular arrays and nanomagnets can be created within carbon
nanotubes or carbon fibers that can outperform their bulky counterparts. Iron and nickel
clusters inside carbon nanotubes behave as single-domain magnets exhibiting large coercive
fields as the cluster size becomes as small as the exchange length. Encapsulated inside carbon
nanotubes otherwise chemically reactive nanomaterials become stable to be examined bymeans of different experimental techniques. Octahedrally coordinated transition metal ionsarranged in one dimension are ideal systems in which anisotropic magnetic coupling can bestudied. Our experiments using X-ray diffraction, Raman, photoemission, SQUID, X-ray
magnetic circular dichroism spectroscopy, electron microscopy and magnetotransportmeasurements seek to probe their intrinsic properties with no environmental factors andreveal electronic and magnetic interactions at molecular interfaces that are responsible for
their unique magnetic properties.
[1] M. Kharlamova et al. Nanoscale 7, 1383 (2015).
[2] A. Briones-Leon et al. Phys. Rev. B 87, 195435 (2013).
[3] H. Shiozawa et al. Sci. Rep. 3, 1840 (2013).
Corresponding Author: H. Shiozawa
Tel: +43-1-4277-72628, Fax: +43-1-4277-9726,
E-mail: hidetsugu.shiozawa@univie.ac.at

Fig.1: Schematic of one-dimensional
structures inside carbon nanotubes [1].

- 18 - 18 -

1-10
High-efficiency biological imaging using single-chiral (9,4) SWCNTs○Yohei Yomogida1, Minfang Zhang2, Masako Yudasaka1, Xiaojun Wei1, Takeshi Tanaka1,
and Hiromichi Kataura1
1
Nanomaterials Research Institute, AIST, Ibaraki 305-8562, Japan
2
CNT Application Research Center, AIST, Ibaraki 305-8562, Japan
Recently, single-wall carbon nanotubes (SWCNTs) have attracted much attention as afluorescence probe for biological imaging owing to their strong absorption and brightemission within near infrared (NIR) biological transparency window (700-1400 nm), wherelight penetrates body deeply [G. Hong et al, Nature Medicine 18 (2012) 1841]. However,currently-used HiPco SWCNTs contain various chiral species with different excitation (S22)
wavelength and thus degrade their excitation efficiency for a single excitation source.
Therefore, the chirality enriched SWCNTs were desired for high-efficiency imaging. In
previous, we developed a novel gel chromatography method for chirality separation of
SWCNTs and successfully separated high-purity single-chiral (9,4) SWCNTs in large scalewith low cost. Owing to both the S11 emission and S22 excitation of (9,4) SWCNTs in thelower absorption regions of water and various biological tissues, they should be more suitable
candidates. In this work, we demonstrated high-efficiency biological imaging of mouse
vasculature using biocompatible single-chiral (9,4) SWCNTs.
To make the (9,4) SWCNTs biocompatible, surfactants on SWCNTs were replaced with
biocompatible surfactants (DSPE-PEG*). Fig. 1 shows the optical absorption spectra of the(9,4) and raw HiPco sample which was prepared as a reference. Their mass concentrations
were estimated to be 0.17 for (9,4) and 0.64 mg/mL for raw HiPco. After each sample wasinjected intravenously through a tail of mice, each NIR image of the mouse was recorded
using an InGaAs 2D array camera under illumination with a LED (~730 nm) light. Fig. 2
shows the images of each mouse under the same shooting conditions. In spite of lower massconcentration, (9,4) exhibited brighter image than raw HiPco sample. It is calculated that (9,4)
sample is more than an order of magnitude brighter than raw HiPco sample at the same massconcentration. Interestingly, we can perform imaging using even two orders of magnitude
lower dose of 0.3 μg per mouse than reported values. The use of biocompatible and low-dose(9,4) SWCNTs will reduce any possible risk to the subject.
This work was supported by KAKENHI No. 25220602.
*1,2-distearoyl-sn-glycero-3-phosphoethanolamine-N-[amino(poly(ethylene glycol))-5000]

Absorbance (a.u.)(9,4) (0.17 mg/mL)
HiPco (0.64 mg/mL)

400

600

800

1000

Wavelength (nm)1200

Fig. 1 Absorption spectra of(9,4) and HiPco SWCNTs

Fig. 2 NIR fluorescence images of mice injected with the(9,4) SWCNTs (left) and HiPco SWCNTs (right)- 19 - 19 -

1-11
Graphene Oxide as a Multifunctional Platform for Cell Imaging○Zhenyu Zhang, Qinghai Liu, Juan Yang, and Yan Li*
Beijing National Laboratory for Molecular Sciences, College of Chemistry and MolecularEngineering, Peking University, Beijing, 100871, China
Graphene oxide (GO) possesses a single-layered, two-dimensional sp2 hybrid structurewith sufficient hydrophilic surface groups [1], which are important for biocompatibility. GO
can serve as a unique double-sided, easily accessible platform for multifarious
functionalization and efficient loading of various substances for bioapplications. In this study,
we demonstrate strategies of using GO as a multifunctional platform in fluorescence andRaman bimodal imaging based on GO/gold nanoparticles (AuNPs) /2-aminoethanethiol(AET)/fluorescein isothiocyanate (FITC, a fluorescent dye) hybrids and in multi-frequency
Raman imaging based on GO/ AuNPs /p-aminothiophenol (p-ATP, a Raman probe) hybrids(Figure 1 &2 ) [2]. GO acts as not only a Raman probe, but also a substrate for Raman andfluorescent probes to load on. Our study demonstrates that GO has great potential inbiomedical applications, acting as a multifunctional platform to facilitate various cell imaging
processes and substance delivery into cells.

Fig.1: Scheme showing the structure of GO
decorated with AuNPs and Raman/fluorescentprobes, and the strategies for fluorescence andRaman imaging of cells.

Fig.2: Confocal fluorescence microscopy images of Hela229 cells incubated with GO/AuNPs/AET/FITC. Images
from (a) to (d) show bright field (a), cell nuclei stained by
DAPI (b), FITC fluorescence in cells (c), and overlays ofthree images (d). Scale bar is 10 μm. Objective is 60x.

[1] Q. Liu et al. Nanoscale 4, 7084 (2012).
[2] Z. Zhang et al. Small 11, 3000 (2015).
Corresponding Author: Y. Li
Tel & Fax: +86-10-6275-6773
E-mail: yanli@pku.edu.cn- 20 - 20 -

1-12Alkali-metal-doped fullerene for application to superconducting wires○Hiroyuki Takeya, Toshio Konno, Chika Hirata, Takatsugu Wakahara, Kunich Miyazawa,
Masashi Tanaka, Takahide Yamaguchi, Yoshihiko Takano
National Institute for Materials Science, Tsukuba 305-0047, Japan

Fig.1: Schematic Process of C60 Superconducting Fibers.

Superconductivity of alkali-metal(A)-doped fullerenes was found in 1991. A-doped fullerides
AxC60 [0<x<6] are particularly interesting since their structures and electronic properties arestrongly related to the doping carrier concentration. The compound, A3C60, shows
superconducting transition at 19K (A=K), 29K (A=Rb) or 33K (A=Cs2Rb). Fullerene-based
nanowhiskers (C60NWs) have been developed by Miyazawa et al.[1] using aliquid-liquid-interfacial-precipitation (LLIP) technique. If such a form of C60NWs turns out tobe a superconductor, it will be a promising material for superconductive fibers or wires.
As we have reported [2,3], we tried to dope alkali metals (K, Rb, Cs2Rb) into the C60NWs
for future application to superconducting light fibers. First, superconductivity was observed at
17 K in the K-doped C60NWs heated at 200oC and their superconducting volume fraction
reached 80 % in 24 hours. In contrast, low superconducting volume fractions around 1 % in
K3C60 superconductors has been reported in previous papers by many researchers. We
concluded this difference was caused from nanopores in C60NWs by the LLIP, which assist
K-migration in the materials. We reported the criticalcurrent density (Jc) of AxC60NW was estimated over
105A/cm2 up to 5 T using the Bean model in M-Hcurves.
In such a result, there was a problem for applicationthat the superconductivity of alkali-metal-doped
fullerenes was disappeared in air. Recently, we found agood sheath pipe for it. Figure 2 shows the currency
dependence of superconducting transition in K3C60
materials. This is the first measurement result of bulk
superconductivity in the sheath. We will report theresult above and a process making short
Fig.2: Superconducting transitions ofsuperconducting wires of K3C60 in my presentaion.
K C in a sheath. Superconducting
360[1] K. Miyazawa. J. Mater. Res., 2002, 17, 83-88. DOI: 10.1557/JMR.2002.0014[2] H. Takeya et al. Molecules, 2012, 4851-4859. DOI:10.3390/molecules17054851.
[3] H. Takeya et al. Mater. Res. Bull., 2013, 48, 343-345. DOI: 10.1016/j.materresbull.2012.10.033.
Corresponding Author: H. Takeya, Tel: +81-29-859-2318, E-mail: takeya.hiroyuki@nims.go.jp- 21 - 21 -

1-13
Singlet oxygen generation from Li+@C60 nano-aggregates dispersed by laser
irradiation in aqueous solution○Kei Ohkubo1, Naoki Kohno1, Shunichi Fukuzumi1,2
1

Department of Material and Life Science, Graduate School of Engineering, Osaka
University, ALCA and SENTAN, Japan Science and Technology Agency, Suita, Osaka
565-0871, Japan
2
Faculty of Science and Technology, Meijo University and ALCA and SENTAN, Japan
Science and Technology Agency (JST), Nagoya, Aichi 468-8502, Japan
Fullerenes, especially [60]fullerene (C60), are known as efficient photosensitisers togenerate the triplet excited state and ROS with high quantum yields. Additionally, fullerenes
are remarkably photostable and non-toxic reagents. However, pristine C60 is hardly soluble inwater and biological media to prevent expression of the photoactivity and PDT efficiency.
Recently, a lithium ion-encapsulated fullerene hexafluorophosphate salt (Li+@C60 PF6–) has
been reported as an efficient photosensitiser to form the long-lived triplet excited state, whichis comparable to that of C60.[1] However, neither solubilisation of Li+@C60, C60 or C70 towater nor the photoinduced singlet oxygen generation efficiency has been studied. We reportherein highly water-dispersed heterogeneous fullerene nano-aggregates composed of Li+@C60,
C60, and C70, which have absorption bands in the visible region as well as an efficient singlet
oxygen generation properties.
Laser pulse irradiation (λ = 532 nm; 500 mW; 10 Hz, 60 min, i.d. = 8 mm) of adeaerated aqueous solution (2.5 mL) containing the dispersed Li+@C60PF6– salt (1.0mg) resulted in formation of Li+@C60 nano-aggregates [(Li+@C60)n]. A brown colour
supernatant solution containing nano-aggregates was obtained after the centrifugationand the decantation procedures. The size of the nano-aggregates was significantly
decreased to 30 nm by the laser pulse excitations determined by the dynamic lightscattering (DLS) measurements. Photoirradiation of an oxygen-saturated deuterated
water (D2O) solution of (Li+@C60)n results in formation of singlet oxygen, which was
detected by the 1O2 phosphorescence at 1270 nm. The quantum yield (Φ) of 1O2
generation was 0.55 for (Li+@C60)n. The values of nano-aggregates are smaller thanthose of the corresponding fullerenes in C6D6/C6H5CN (1:1 v/v) probably because of
the excited state annihilation, which was confirmed by time-resolved femtosecond
transient absorption spectral measurements [2].
[1] K. Ohkubo, Y. Kawashima, S. Fukuzumi, Chem. Commun., 48, 4314 (2012).
[2] K. Ohkubo, N. Kohno, Y. Yamada, S. Fukuzumi, Chem. Commun., 51, 8082 (2015).
Corresponding Author: K. Ohkubo
Tel: +81-6-6879-7369, Fax: +81-6-6879-7370,
E-mail: ookubo@chem.eng.osaka-u.ac.jp- 22 - 22 -

1-14
Chemical and physical control of superconductivity and magnetism○Yasuhiro. Takabayashi,1 Ruth H. Zadik,2 Kosmas Prassides1,3
1WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai

980-8577, Japan3

2Department of Chemistry, Durham University, Durham DH1 3LE, UK

Japan Science and Technology Agency, ERATO Isobe Degenerate π-Integration Project,
Tohoku University, Sendai 980-8577, Japan

Face-centered-cubic (fcc) alkali fullerides (A3C60) were long considered as archetypal
conventional BCS superconductors. Metallic fcc A3C60 transforms to superconductor below
transition temperature, Tc. Early work showed that Tc of A3C60 increases monotonically withinter-C60 separation, which is controlled by the A+ cation size. Inter-C60 separation can be also
controlled by applying hydrostatic pressure. We succeeded to synthesize the most expanded
alkali-doped fcc Cs3C60 which is an antiferromagnetic insulator at ambient pressure with anordering temperature of 2.2 K [1]. Application of hydrostatic pressure can then induce
superconductivity. The Tc-V plot shows a dome-like relationship. The Tc-V curve after peaking
at 35 K merges into the Tc-V linear line of the less expanded fcc A3C60.
It is possible to approach to the superconductor – insulator boundary across the maximumof superconductivity dome chemically, by increasing the Rb content in the family ofsuperconductors, RbxCs3-xC60 [2]. We show that applying chemical pressure transforms thehyperexpanded Cs3C60 Mott-Jahn-Teller (MJT) insulator first into an unconventionalcorrelated Jahn-Teller metallic (JTM) state (an inhomogeneous state where localized electrons
coexist with metallicity and the on-molecule distortion persists). It then crosses over to aconventional Fermi liquid state where the molecular electronic signature fades away. This
normal state crossover is mirrored in the evolution of the superconducting state, with thehighest Tc found at the boundary between unconventional correlated and conventional
weak-coupling
BCS
superconductivity,
where
the
interplay between extended andmolecular aspects of the electronic
structure is optimized to create thedome.
[1] A. Y. Ganin, Y. Takabayashi et al.,Nature 466, 221 (2010).
[2] R. H. Zadik, Y. Takabayashi, G. Klupp,
R. H. Colman, A. Y. Ganin, A. Potočnik, P.
Jeglič, D. Arčon, P. Matus, K. Kamarás, Y.
Kasahara, Y. Iwasa, A. N. Fitch, Y. Ohishi,
G. Garbarino, K. Kato, M. J. Rosseinsky, K.
Prassides, Science Advances, 1, e1500059(2015).
Corresponding Author: Y. Takabayashi
Tel/Fax: +81-22-217-5953
E-mail:takabayashi.yasuhiro.87e@st.kyoto-u.ac.jp

Fig. 1: Global electronic phase diagram of fcc A3C60
fullerides.

- 23 - 23 -

2-1

Tunable absorption of electromagnetic wave in graphene
for a total reflection geometry of dielectric materials○R. Saito, C. Reynolds, and M. S. Ukhtary

Department of Physics, Tohoku University, Sendai 980-8578, Japan
Here we discussed a possible switching device of electromagnetic wave (EM) in THz
region which is controlled by gate electrode. What is special in the present result
are that (1) we can change the absorption probability of EM from 0% to 100% bychanging the Fermi energy from 0 to 1eV, and that (2) we adopted so-called totalreflection geometry of two dielectric materials at which interface we put a single
layer of graphene. Because of the high Drude conductivity, we expect surface
plasmon excitation in graphene which is essential for obtaining 100% absorption of
EM even for mono layer graphene [1]. Now we consider a possible modification to
improve the performance in which two single graphene layers are taken into
account, in which two graphene layers are separated by the third dielectricmaterials. We will propose to experimental people a possible EM switching device.
Reference[1] M. Shoufie Ukhtary, Eddwi H. Hasdeo, Ahmad R. T. Nugraha and Riichiro Saito,
Appl. Phys. Express 8 055102 (2015).

- 24 - 24 -

2-2
Energetics and electronic structure of h-BN nanoribbons○Ayaka Yamanaka, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba
305-8577, Japan
Hexagonal boron nitride (h-BN) is attracting much attention due to its unique physicalproperties such as mechanically strong structure, high thermal conductivity, and wide band
gap those make them as the insulating version of graphene. Indeed, h-BN possesses
honeycomb networks of BN bond with the length of 0.144 nm. Because of these properties,
h-BN is applicable for the wide areas in the present and future nanotechnologies. For practicalapplications of h-BN, it is very important to control their shapes and sizes those seriously
affect their fundamental properties. In this work, we study the energetics and electronic
structure of h-BN with various edge structures. All calculations are performed by using thedensity functional theory (DFT) with the generalized gradient approximation. We use an
ultrasoft pseudopotential to describe the interaction between valence electrons and ions. The
effective screening medium (ESM) method is applied to avoid the unintentional dipole
interactions with the periodic images arising from their polar edges in the framework of theconventional DFT calculations.
(b) 8°(c) 16°(d) 23°(e) 30°In this study, we consider h-BN (a) 0°
nanoribbons with various edge shape of
which edge angles are  = 0° (armchair), 8°,16°, 23°, and 30° (zigzag) shown in Fig.
1(a)-1(e). As shown in Fig. 1(f), the edge
formationenergyofhydrogenatednanoribbons keeps constant value of 0.25 eV
throughout all . Therefore, the h-BN flakes
with hydrogenated edges may exhibit richvariation in their morphology and edge
structures, in sharp contrast to the graphene
nanoribbons. Small and constant edge (f) Edge Formation Energy
formation energy is ascribed to thesemiconducting electronic properties ofh-BN nanoribbons with hydrogenated edges.
On the other hand, edge formation energy
monotonically increases with increasing theedge angle in the case of h-BN nanoribbons
with clean edges. In the case, increase ofdensity of state at EF arising from dangling
bond states leads to the monotonical increaseof edge formation energy.
Fig.1: (a)-(e) Geometric structures and (f) edge
formation energy of h-BN nanoribbons.
Corresponding Author: A. Yamanaka
Tel: +81-29-853-5600 (ext. 8233), Fax: +81-29-853-5924,
E-mail: ayamanaka@comas.frsc.tsukuba.ac.jp- 25 - 25 -

2-3Carrier-density- and Electric-field-dependent Electroluminescenceof Monolayer WSe2
○Jiang Pu1, Leiqiang Chu2, Lain-Jong Li3, Tomo Sakanoue1, Goki Eda2, Taishi Takenobu1,4
1

Department of Advanced Science and Engineering, Waseda Univ., Tokyo 169-8555, Japan2
Physics Department, National University of Singapore, Singapore 117542, Singapore
3
Physical Sciences and Engineering Division, KAUST, Thuwal 23955-6900, Saudi Arabia
4
Kagami Memorial Laboratory, Waseda University, Tokyo 169-0051, JapanThe strong confined system of monolayer transition metal dichalcogenides is raising muchattention to realize remarkable optical properties, such as the formation of charged exciton(trion) and the quantum-confined Stark effect [1]. For example, the electrical control of
exciton and trion photoluminescence has already realized. In addition, the large Stark effecthave been suggested, however, it has been only discussed qualitatively [2,3]. One possible
barrier for investigation Stark effect might be due to the insufficiency of electric field because
current researches have been performed by SiO2 back-gate structure. The interfacial traps of
SiO2 would also affect the excitonic properties, which could hamper the intrinsic effect ofelectric field. Therefore, for revealing Stark effect of excitons and trions, the clean interface
which can contribute to both high carrier-density- and high electric-field-modulation are
required. Recently, we proposed electric double layer light-emitting diodes (EDLEDs), which
can increase carrier density up to ~ 1014 /cm2 and electric field up to ~ 106 V/cm
simultaneously to generate electroluminescence (EL). Here, we fabricated EDLEDs withmonolayer WSe2 and evaluate its carrier-density- and electric-field-dependent EL properties.
The EDLEDs were constructed from exfoliated monolayer WSe2 and ion gels, gelation ofionic liquids. Importantly, EDLEDs are two-terminal devices, which p-i-n junction can be
self-organized to obtain EL when the lateral potential gradient that is larger than bandgap ofWSe2 is applied (Fig. 1(a)). As shown in I-V curve of Fig. 1(a), we measured EL spectrum asvarying applied voltage. Figure 1(b) exhibits the voltage-dependent EL of WSe2 EDLEDs.
The clear spectrum broadening and non-linear red shift were observed. By understanding
operation mechanism of EDLEDs and analyzing obtained spectrum, we discuss these unique
EL properties from the both aspect of carrier-density- and electric-field-modulation, resulting
in generation (and control) of trion EL and Stark effect of excitons and trions.

Fig. 1 Left: (a) Schematic of a WSe2 EDLED and its I-V curve. Right: (b) Voltage-dependent EL spectrum.
[1] X. Xu, et al. Nat. Phys. 10, 343 (2014)
Corresponding Author: J. Pu, T. Takenobu[2] A. Ramasubramaniam, et al. Phys. Rev. B. 84, 205325 (2011)
Tel/Fax: +81-3-5286-2981
E-mail: hokoh.apple@fuji.waseda.jp, takenobu@waseda.jp[3].A. M. Jones, et al. Nat. Nanotechnol. 8, 634 (2013)- 26 - 26 -

2-4
Memristive phase switching in two-dimensional crystals○Masaro Yoshida1, Ryuji Suzuki1, Yijin Zhang1, Masaki Nakano1, Yoshihiro Iwasa1,2,
1

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,
The University of Tokyo, Tokyo, 113-8656, Japan
2
RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan

Two-dimensional (2D) crystals, extending from graphene, transition metal dichalcogenides
to black phosphorene, provide an ideal platform for exotic electronic band structures in monoor multi-layer forms. The thinning-induced modification of their band structures results innovel semiconductor functionalities, which is exemplified by the emergent valleytronics inmolybdenum disulfide (MoS2) and tungsten diselenide (WSe2).
The thinning to nanoscale may also affect collective phenomena in interacting electron
systems, leading to unconventional electronic states and related functionalities. Among 2D
crystals with correlated electrons, 1T-type tantalum disulfide (1T-TaS2) is attracting growinginterests, because its first-order phase transition in nano-thick crystals is found to be highly
controllable [1-4]. For example, we employed electric double-layer (EDL) technique to a
61-nm-thick crystal, and succeeded in the complete suppression of the phase transition byelectrostatic carrier doping as displayed in Fig. 1 [2].
Here, we show memristive phase switching in nano-thick crystals of 1T-TaS2 [5]. The
ordering kinetics of the phase transition was revealed to become slow as the thickness is
reduced, resulting in an emergence ofmetastable states. Furthermore, we realized theunprecedented memristive switching tomulti-step non-volatile states by applying
in-plane electric field. Moreover, we
discovered current-induced metastable states
which have never been realized in bulk single
crystals. The reduction of thickness is essential
to achieve such non-volatile electricalswitching behavior. The thinning-induced slow
kinetics probably makes the various metastablestates robust and consequently realizes thenon-volatile memory operation. The present
result indicates that 2D crystal with correlated
electrons is a novel nano-system to explore andfunctionalize multiple metastable states, which
are inaccessible in its bulk form.
[1] L. Stojcheska et al. Science 344, 177 (2014).
[2] M. Yoshida et al. Sci. Rep. 4, 7302 (2014).
[3] M. J. Hollander et al. Nano Lett. 15, 1861 (2015)[4] Y. Yu et al. Nat. Nanotech. 10, 250 (2015).
[5] M. Yoshida et al. accepted.
Corresponding Author: M. Yoshida
Tel: +81-3-5841-6822, Fax: +81-3-5841-6822,
E-mail: masaro-yoshida@mp.t.u-tokyo.ac.jp- 27 - 27 -Fig.1: Temperature (T) versus four-terminal
resistance (Rxx) curves of a 61-nm-thick
1T-TaS2 crystal measured at various gate
voltages (VG). Inset: the on-set temperature of
the first-order phase transition (Tc) as afunction of VG.

2-5
Direct Analysis of Exciton Band Structure of SWCNTs using Their
Circular Dichroism Spectra○Xiaojun Wei, Mayumi Tsuzuki, Takuya Hirakawa, Yohei Yomogida, Atsushi Hirano,
Shunjiro Fujii, Takeshi Tanaka and Hiromichi Kataura
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8562, JapanDOSBand structure of single-wall carbon nanotubes (SWCNTs) was well calculated by density
functional theory (DFT) to date. However, there has been very limited the number ofexperimental analysis reports because we didn’t have good way to analyze them. In this work,
we report experimentally obtained excitonic band structures of SWCNTs for the first time.
This analysis was based on the circular dichroism (CD) spectra. It is well known that Ei,itransitions are allowed for parallel polarization of electric field to nanotube axis and Ei,jtransitions for cross polarization. Usually, we can observe only Ei,i transitions due to a strong
local field effect. However, all these allowed optical transitions can be observed in CD spectra[1]. If we have single-chirality enantiomers, we can analyze all allowed optical transitions
using CD spectra.
For this purpose, we developed an effective gel chromatography method by combining theoverloading selective adsorption and stepwise elution using a mixed surfactant. Using thistechnique, 9 kinds of high-purity single-chirality enantiomers have been separated. Extremely
high CD peak intensity indicates thehighest purity of enantiomers compared
1.5
with previous reports [2]. The high5c
(6, 5)
intensity CD signals enabled us detailanalysis of CD spectra. Using a simple
Calculation by DFT
1assumption, we could analyze detailed
This work
5v
excitonic band structure of SWCNTs
for the first time without any theoretical4csupport. We compared our results with
3c
4v
0.5
3v
the DFT calculations. Interestingly, our
2
2v 1
1c c
v
results
couldhighlyreproduce
asymmetric structure of valence andconduction bands of SWCNTs that
0
-3
-2
-1
0
1
2
3
were predicted by DFT calculations.
Energy (eV)
Typical result for (6, 5) enantiomers
was indicted in Fig. 1. We will discuss
Figure 1.
Asymmetric band structure comparison
the other chiralities and a family pattern
between experimental analysis based on CD spectraof them.
(broken line) and theoretical calculation by DFT (solidThis work was supported byline) for (6, 5) SWCNTs.
KAKENHI No. 25220602.
[1] A. Sánchez-Castillo and C. Noguez, J. Phys. Chem. C 114, 9640-9644 (2010).
[2] S. Ghosh et al. Nat. Nanotechnol. 5, 443-450 (2010).
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-29-861-2786, E-mail: h-kataura@aist.go.jp- 28 - 28 -

2-6On-chip monolithic integration of microsupercapacitorswith tunable performance.
○Karolina Laszczyk1, Kobashi Kazufumi2, Shunsuke Sakurai2, Atsuko Sekiguchi2, Don N.
Futaba2, Takeo Yamada2, Kenji Hata2
1

Technology Research Association for Single Wall Carbon Nanotubes (TASC), Tsukuba
305-8565, Japan
2
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba
305-8565, Japan

The progress in thin light-weight electronics has been advanced about new class of tinyenergy devices [1-2]. This approach takes benefit of use of novel nano-carbon materials andSi-based technology to form planar, micro-scale supercapacitor electrodes with the power
densities of commercial bulky energy devices. Recently, we developed themicrosupercapacitor possessing the same performance (operational voltage, capacitance,
speed) as a commercial target Al capacitor despite being 1/1000th in size [3]. To achieve it, we
proposed the technology to isolate electrochemically micro-scale EDLCs with 100 μm
cell-to-cell distance and used basic physical rules to achieve high voltage and capacitance byaddition of capacitors in series or in parallel, respectively. It means a single electrochemicallyisolated micro-EDLC with defined performance can be used as a building block to form
arbitrary arrangements. In this way we approach the new class of energy devices where thecapacitance and the operational voltage are not limited by chemical and physical properties ofused materials, whereas the speed is unchanged. As a result our IEDC could achieved ~173
higher volumetric capacitance, the power density of 2271 Wcm-3, energy density of ~7
mWhcm-3, and as high as 100 operational voltage.
Towards the practical application of our device,
there is a need to support it with an additional
characterization of the arbitrary arrangements ofcells. Here, the use of the complex capacitancecalculated from the impedance spectroscopy data
could provide the evaluation of performance
related to porous electrodes uniformity among
the cells. By set of 1-10 cells in series and inparallel we investigated the complex plot of
capacitance versus frequency (Fig.1).The resultsof real capacitance transition and imaginary
capacitance peaks provide the useful information Fig.1. Graph of complex capacitance:
towards further improvements and future frequency vs real capacitance for 1-10 cells in
directions for industrialization of our tiny energy parallel and in series.
circuit. This presentation is based on results
obtained from a project commissioned by the NEW Energy and Industrial Technology
Development Organization (NEDO).

[1] M.F. El-Kady et al., Nat. Comm. 2013, pp. 1-9.
[2] Z.-S. Wu et al., Nat. Comm. 2013, pp. 1-8.
[3] K. Laszczyk et al., Adv. En. Mat, published online on 7th july 2015, DOI: 10.1002/aenm.201500741
Corresponding Author: A. Sekiguchi ,Tel: +81-29-861-4611, Fax: +81-29-861-4851, E-mail: atsuko-sekiguchi@aist.go.jp- 29 -- 29 -

2-7
In-plane TEM investigation on mono- and bi- metallic catalyst for growthof single walled carbon nanotubes○Rong Xiang1, Akihito Kumamoto2, Kehang Cui1, Hua An1, Yang Qian1, Taiki Inoue1,
Shohei Chiashi1, Yuichi Ikuhara2, Shigeo Maruyama1, 3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Institute of Engineering Innovation, The University of Tokyo, Yayoi 2-11-16, Tokyo
113-8656, Japan
3
Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), 1-2-1 Namiki, Tsukuba 205-8564, Japan
We propose a technique to obtain the in-plane view of catalyst particles using a Si/SiO2
TEM grid, which contains a thin SiO2 film window made by micro-fabrication. This hightemperature resistible grid allows the direct imaging of nano-sized particles on the SiO2 film
and minimizes information change/loss from growth chamber to TEM column. Crystal
structure, elemental distribution, as well as statistical information of hundred thousands ofparticles can be obtained. By this technique, we achieve a series of improved/new
understanding on the catalyst for SWNT growth.
1) For monometallic particles, morphology and structure of catalyst before and after
chemical vapor deposition are directly observed, which clearly suggests Co forms muchsmaller particles on SiO2 than Fe or Ni, and explains the difference in efficiency for SWNT
growth.
2) In CoCu bimetallic catalyst, Z-contrast Scanning TEM images shows that Cu prohibits
Co from aggregating into larger growth sites by anchoring smaller Co on Cu (Fig. 1). SWNTs
with all sub-nm diameter are produced on flat substrate from this combination.
3) In CoW system, strong interaction andalloying between Co and W occurs at temperatureshigher than 700 °C, as evidence by EDS andelectron diffraction. This is in good agreement withexperimental observations that high temperature
reduced CoW catalyst selectively produces (12, 6)
SWNTs while low temperature reduced one has noselectivity. At optimized condition, simple
sputtered CoW produce (12, 6) SWNTs with anenrichment of 60-70%.
We expect this technique provide a uniquechance towards fundamental understanding of
SWNT growth, as well as novel strategies for better
control over SWNT structure, such as diameter, andchirality.
Fig. 1. A scanning TEM micrograph of a CoCu
particle on SiO2 film overlapped EDS mapping.

Corresponding Author:
R. Xiang, Tel: +81-3-5841-6408; E-mail: xiangrong@photon.t.u-tokyo.ac.jp
S. Maruyama, Tel: +81-3-5841-6421; E-mail: maruyama@photon.t.u-tokyo.ac.jp- 30 - 30 -

3-1
Selective Synthesis of Cobalt-sulfur Nano Cluster Using a Templating
Fullerene Ligand○Yutaka Matsuo1
1

Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo,
Bunkyo-ku, Tokyo 113-0033, Japan

Metal chalcogenide clusters are known as highly potential structural motifs of enzymatic
active sites, catalysts, optical/optoelectronic materials, and so on. Among such clustercomplexes, those containing of cobalt and sulfur are particularly attractive because theirphotoelectric and optomagnetic properties. Moreover, some intriguing properties are known
for cobalt sulfide nanoparticles, giving rise to interests on cobalt–sulfur cluster complexes.
In this presentation, we discuss the selective synthesis of the well-defined Co8S15 clustercomplex (Figure 1) starting from a cobalt trisulfide complex.1–3 The precursor cobalt trisulfide
complex served as a cobalt–sulfur source as well as a powerful sterically templating terminal
ligand. Crystallographic, electrochemical, and magnetic measurements elucidated amixed-valence nature of the cluster with two high-spin cobalt(II) centers. The present study
will provide new opportunities for development of artificial functional metal–sulfur clustercomplexes for various applications.

Figure 1. Crystal structure of the Co8S15 cluster complex (solvent molecules and disordered moieties
are omitted). (a) Space-filling model for the central Co8S13(SR)2 moiety. (b) Space-filling model for
the whole molecule.
[1] M. Maruyama, J.-D. Guo, S. Nagase, E. Nakamura, Y. Matsuo, J. Am. Chem. Soc. 2011, 133, 6890.
[2] Y. Matsuo, M. Maruyama, Chem. Commun. 2012, 48, 9334. (Feature Article)[3] M. Maruyama, M. König, D. M. Guldi, E. Nakamura, Y. Matsuo, Angew. Chem. Int. Ed. 2013, 52, 2613.
[4] M. Maruyama, K. Imoto, M. König, D. M. Guldi, S. Ohkoshi, E. Nakamura, Y. Matsuo, J. Am. Chem. Soc.
2013, 135, 10914.
Corresponding Author: Y. Matsuo
Tel: +81-3-5841-1476, Fax: +81-3-5841-1476
E-mail: matsuo@chem.s.u-tokyo.ac.jp- 31 - 31 -

3-2
Regioselectively controlled synthesis of multifunctionalized
C60 and C70 fullerenes○Hiroshi Moriyama1, Kouya Uchiyama1, Miki Igarashi1, Keita Watanabe1,
Haruka Takahashi1, Kenji Yoza2
1

Department of Chemistry, Toho University, Miyama 2-2-1, Funabashi 274-8510, Japan
2
Bruker AXS, Moriyacho 3-9, Yokohama, 221-0022, Japan

Regioselectively controlled synthesis of fullerene derivatives with multiaddends has
attracted much attention because multifunctionalized fullerenes have unique properties
derived from their contracted  system as well as addends attached to the fullerene
frameworks. However, it is difficult to synthesize them regioselectively because there aremany reaction sites on the carbon skeleton of the fullerenes for successive substitution
reactions. We have noted that the halogenofullerenes, C60Br6 and C60Br8 [1] have uniquewell-characterized structures suitable for a starting material, although they have never beenused for that purpose, particularly C60Br8, because of their extremely low solubility in organic
solvents. We report here regioselective synthesis of novel octaalkoxyfullerenes, C60(OR)8 (R= CH3, C2H5, CH2CF3) by a substitution reaction of the halogenofullerenes, C60Br8, as well as
alkoxyfullerenes and their derivatives, C60(OH)5X and C60(OSiMe3)5X (X = Cl, Br), from thecorrespondinga starting fullerenes, C60X6. These fullerene compounds, isostructural with thestarting material,
were fully characterized using 1H, 13C, and 19F NMR spectroscopy as well)as X-ray single-crystal structural analysis.

a)Fig. 1.

b)

c)

d)

Crystal structures of a) C60(OMe)8 , b) C60(OEt)8, c) C60(OSiMe3)5Cl, and d) C60(OSiMe3)5Br.

In addition, we have also succeeded in the regioselective synthesis of C70(OR)10 (R = CH3,
C2H5, C3H7, CH(CH3)2) from C70Br10 [2], as shown in the following scheme.
1) 森山廣思、内山幸也 “フラーレン誘導体及びその製造方法、並びにその利用” 特願 2012-194209(2012. 9. 4 出願); 特願 2013-046948(2013. 3. 8 出願) 2） T. Harada, H. Moriyama, H. Takahashi, K.
Umemura, H. Yokota, R. Kawakami, K. Mishima, Appl. Spectrosc. 2014, 68, 1235-1240.
謝辞: 本研究の一部は平成 26 年度学内共同研究助成「結晶多形制御手法の新規開拓および創薬分野への展開」（森山広思・寺田勝英・東屋 功）の成果である。

Scheme 1.

Fig. 2. Schlegel diagramof C70Br10 and C70(OR)10

Scheme 1.

[1] P. R. Birkett, P. B. Hitchcock, H.W. Kroto, R. Taylor, D. R. M. Walton, Nature 1992, 357, 479–481.
[2] M. M. Wienk, J. M. Kroon, W. J. H. Verhees, J. Knol, J. C. Hummelen, P. A. van Hal, R. A. J. Janssen,.Angew. Chem.
Int. Ed. 2003, 42, 3371–3375.
Corresponding Author : Hiroshi Moriyama

TEL: +81-47-472-1211, FAX: +81-47-472-1188, E-mail: moriyama@chem.sci.toho-u.ac.jp- 32 - 32 -

3-3Electronic structure of Y2@C82-C3v and Lu2@C82-C3v○Takafumi Miyazaki1, 3, Gaku Takasumi1, Hajime Yagi1, Hisanori Shinohara2 and Shojun Hino1
1

Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan
2

Graduate School of Science, Nagoya University, Nagoya 464-8602, Japan
3

Faculty of Science, Okayama University, Okayama 700-8530

We have been measuring ultraviolet photoelectron spectra (UPS) of endohedral
fullerenes to clarify their electronic structure [1, 2]. Here, we present UPS of Y2@C82-C3v andLu2@C82-C3v and discuss their electronic structures with an aid of DFT calculation.
The UPS onset energy of Y2@C82 and Lu2@C82 is slightly smaller than empty C82.
The deeper valence band UPS (BE > 5 eV) of Y2@C82-C3v and Lu2@C82-C3v are analogous tothose of other endohedral fullerenes, while the upper valence band UPS (BE < 5 eV) aresignificantly different from those of endohedral C82 fullerenes of other cage symmetry.
The UPS of Y2@C82-C3v was well reproduced by a simulated spectrum obtained from
DFT geometry optimized structure. However, the UPS of Lu2@C82-C3v could not be
reproduced well by simulated spectra obtained from DFT calculation. Actually DFT
calculation yields two optimized structure for Lu2@C82-C3v. The formulation energy
difference between these two optimized structures is very small. A simulated spectrum
obtained by adding these two simulated spectra reproduced the UPS of Lu2@C82-C3v very
well. From the calculated energy diagrams of Lu2@C82, empty C82 of the same C3v cagesymmetry, a formal oxidation state of the fullerene can be described as C824-. However, the
XPS Lu3d of Lu@C82-C3v and Lu2@C82-C3v suggested Lu3+ oxidation state [3]. The DFT
calculation results present new binding orbital formation between two entrapped Lu atoms.
Thus, the electronic configuration of Lu2@C82 is (Lu-Lu)4+@C824-. Similarly, it could beclarified the binding orbital formation between entrapped Y atoms in Y2@C82-C3v. Present
results could be to support an empirical rule that the electronic structure of endohedral
fullerenes was principally governed by the number of transferred electrons and cage structure.
[1] T. Miyazaki, S. Hino et al, Chem. Phys., 447 (2015) 71, [2] T. Miyazaki, S. Hino et al,
Chem. Phys., 431-432 (2014) 47, [3] The 38st Fullerene-Nanotube-Graphene General
Symposium p25 (2010).
Corresponding Authors: T. Miyazaki, E-mail: tmiyazaki@okayama-u.ac.jp, phone: 086-2517901; S. Hino, E-mail: hino@gakushikai.jp.

- 33 - 33 -

3-4
Effect of layered-structure carbon-nanotube sheets on electric
properties of brain wave electrodes○Shunzo Suematsu1, Akira Kawamoto2, Kousuke Awara3, Ryuhei Kitai 3
1

Basic Research Center, R&D Headquarters, Nippon Chemi-Con Corporation, Kanagawa
213-0012, Japan
2
Electrical and Electronic Engineering, Fukui National College of Technology, Geshi-cho,
Sabae-city, Fukui 916-8507, Japan.
3
Department of Neurosurgery, University of Fukui, 23 Shimoaizuki Eiheijimatsuoka,
Yoshida-gun, Fukui 910-1193, Japan.
Carbon nanotube (CNT) sheets have been developed for fabricating brain wave electrodes.
In our previous study, we found that a multi-wall CNT/polymethyl-methacrylate(MWCNT/PMMA) composite electrode allowed the measurement of brain waves as
accurately as conventional Ag disk electrodes, without distorting X-ray, computed
tomography (CT), and magnetic resonance imaging (MRI) [1]. In order to measure brain
waves more accurately, we next focused on binder-free sheets made of long CNTs which wereoriginally prepared for electric double layer capacitor electrodes. In this study, electric
properties of these sheets with layered or non-layered structure were investigated.
Layered and non-layered CNT sheets were prepared using the paper-making method. The
obtained four types of sheets, i.e., layered single-wall CNT (SWCNT), non-layered SWCNT,
layered MWCNT, and non-layered MWCNT were analyzed by sheet conductivity
measurement and impedance spectroscopy. Table 1 shows the sheet resistance of the prepared
CNT sheets and a carbon fiber (CF) sheet.
The layered SWCNT and MWCNT sheets Table 1. Sheet resistance and density of CNT sheets.
Sheet
Sheet
exhibited lower resistance than theresistancedensity
non-layered SWCNT and MWCNT sheets,(Ω)(g/cc)
respectively. This would be caused by a Layered SWCNT
140.36
lower contact resistance of the highly Non-layered SWCNT
17
0.26
densified CNT layers and/or a high Layered MWCNT
43
0.33
interfacial contact area between the layers. Non-layered MWCNT
60
0.19
cf.
Carbon
fiber
5000
0.04
For impedance spectroscopy, all of the
CNT sheets exhibited absolute
impedance values lower by one tothree orders of magnitude comparedwith the CF sheet and Ag disk
electrode in the frequency range from 1
to 10 Hz, where most of the brain
waves exist (Fig.1). This suggests that
the CNT sheets, especially the layered
sheets, could measure brain waves
more accurately compared with the CF
sheet and Ag disk electrodes.
[1] Awara et al. BioMedical Engineering
OnLine, 13:166 (2015).
Corresponding Author: A. Kawamoto
Tel: +81-778-62-8267, Fax: +81-778-62-3413,
E-mail: kawamoto@fukui-nct.ac.jp

Fig.1. Absolute impedance values (|z|) vs. frequency (f) for
four different CNT sheets and a carbon fiber sheet and Ag
disk electrode (non-layered SWCNT is highly overlappedwith layered MWCNT).

- 34 - 34 -

3-5
Robust and Soft Elastomeric Field Effect Transistors Tolerant to Diverse
Variety of Applied Loads○Atsuko Sekiguchi1, Fumiaki Tanaka2, Shunsuke Sakurai2, Don N. Futaba2, Takeo Yamada2,
Kenji Hata2
1
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565,
Japan
2
Technology Research Association for Single Wall Carbon Nanotubes (TASC), Tsukuba
305-8565, Japan

Realization of electronics that can withstand the mechanical loads in our daily actions andprovide softness for human body to feel comfort with freedom of movement would enable
new applications, such as wearable system for personal health monitoring and therapeutics.
While recent progress in material engineering has afforded flexibility and stretchability toelectronics either designing new structure architectures [1] of conventional materials ordeveloping new materials [2], it is still a great challenge to realize the devices tolerant todiverse variety of applied loads, such as bending, twisting, stretching, compression andimpact.
Here, we have fabricated elastomeric field effect transistors (FET) where the substrate,electrodes and gate dielectric were all made from elastomeric materials with two types ofsingle walled carbon nanotubes (SWNTs) [2, 3] that introduce electrical functionality. The
mechanical softness and robustness of both the channel and electrodes benefit from the
SWCNT network structure resulting from the use of such high aspect ratio and pure SWCNTs.
Our elastomeric FET could tolerate every punishment our clothes experience, such as being
stretched (elasticity: ~110%), bent, compressed (>4.0 MPa), and impacted (>6.26 kgm/s). In
addition to this, we havedemonstrated that it could still be
operated after exposure to theharshest environment in our daily
life, such as being run over by a car,stepped on by high heeled shoes,
hammer strikes, and laundering.
Our electronic device provides a
novel
designprincipleforelectronics and wide range
applications representing one step
forward towards electronics that
Transfer characteristics of the FET before (red) and after
are fully compatible with clothes or(blue) the load from high heels
our daily actions.
[1] D.-H. Kim et al. Science, 320, 507 (2008).
[2] T. Sekitani et al. Science 321, 1468 (2008).
[3] K. Ihara et al. Phys. Chem. C, 115, 22827(2011).
Corresponding Author: A. Sekiguchi
Tel: +81-29-861-4654, Fax: +81-29-861-4851,
E-mail: atsuko-sekiguchi@aist.go.jp- 35 - 35 -

3-6
Indium-Free Flexible Planar Heterojunction Perovskite Solar Cells using
Single-walled Carbon Nanotube film as Electrode, and Investigation ofHole-transporting Layers and Dopants thereof○ Il Jeon1, Takaaki Chiba2, Clement Delacou2, Esko I. Kauppinen3, Shigeo Maruyama2,
Yutaka Matsuo1
1 Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo,
Bunkyo-ku, Tokyo 113-0033, Japan
2 Department of Mechanical Engineering, School of Engineering, The University of Tokyo,
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3 Department of Applied Physics, Aalto University School of Science, 15100, FI-00076 Aalto,
Finland
Recent emergence of perovskite solar cells have drawn much attention owing to
excellent power conversion efficiency arising from a long exciton diffusion length, highabsorption and carrier mobility. Since ITO is indispensible in perovskite solar cells much likein other photovoltaic devices, there are numerous problems such as rising cost andinflexibility. Many organic solar cells researchers have been vigorously working on
replacement of ITO by carbon nanotube. Yet, the same application in perovskite solar cells
has not been reported to date. Therefore, in this work, we investigated diverse methodologies
that can achieve carbon nanotube electrode in indium-free perovskite solar cells. We foundthat modified PEDOT:PSS function as both electron- blocking layer and dopant analogue tothe organic photovoltaics while MoO3 is not compatible which is unique to the perovskite
system. We discovered that diluted nitric acid doping with a concentration of 35% serves as
the most effective method to enhance optical conductivity of carbon nanotube in a safemanner. A PCE of 6.32% in an ITO-free planar heterojunction perovskite solar cell wasrecorded when its indium tin oxide based reference gave 9.05%. Further flexible application
showed 5.38% on a PET substrate.

Fig.1: Illustration of various single-walled carbon nanotube based inverted perovskite solar cells
Corresponding Author: Y. Matsuo, Tel: +81-3-5841-1476, E-mail: matsuo@chem.s.u-tokyo.ac.jp- 36 - 36 -

3-7
Contact resistivity evaluation of parallel adjacent CNTsfrom in-plane conductivity of dense CNT forest on silicon carbide
1○Masafumi Inaba1, Wataru Norimatsu2, Michiko Kusunoki2, Hiroshi Kawarada1
Graduate School of Advanced Science and Engineering, Waseda University, Tokyo
169-8555, Japan2
Eco Topia Science Institute, Nagoya University, Aichi 464-8603, Japan

It is important to understand the electrical contact of parallel adjacent CNTs for CNT thinfilm transistors with dispersed CNT channels and CNT yarns. We have reported the in-plane
conductivity of dense carbon nanotube forest on silicon carbide substrate (CNT forest on
SiC).[1] Here we additionally discuss the contact conductivity estimation of parallel adjacent
CNTs evaluated from the in-plane conductivity.
The in-plane conductivity of dense CNT forest on SiC was evaluated to be ~50 S/cm. In
CNT bulk region, CNT should be parallel adjacent to each other. We assumed three
approximations to evaluate the contact resistivity. First, CNTs have the same diameter and aredensely packed with the hexagonal pattern. Second, CNT/CNT contact conductivity is thesame for CNTs with the same diameter. Third, CNT conductivity is much higher than the
CNT/CNT contact conductivity. With these approximations,
Imaginary electrode
Folded CNT
CNT forest is described as the net-like circuit in Fig.1. In
CNT bundle or forest, CNTs are parallel adjacent to eachother, and should have deformative cross-section likehexagon, where CNTs contact to each other with the largerw
area than the case of having perfectly circle cross-section.
Fig. 2 shows the schematic image of microscopic
deformative CNT contact. For large diameter CNTs, themaximum contact width is estimated to be D/2-0.1 nm,
l l
where D is the diameter of CNT. Considering the CNT
RT  RSw
diameter is 5–10 nm, the contact resistivity was in the range
Fig. 1 Approximated resistance-82
of 0.8–1.7×10 cm .
network of parallel adjacent
To verify the CNT/CNT contact resistivity, we calculated
CNT forest.
the tunneling resistance of graphene/graphene interlayer.
Radius~ 0.2 nm
The tunneling contact resistivity RTC is written as~ 0.34 nm
1where q is elementary charge, h is Plank’s constant, d isthe tunneling distance, me is the electron (effective) mass,and  is the barrier height. Fig. 3 shows the calculated
contact resistivity as a function of the tunneling distance d,where me=m0 (electron mass), and =5.0 eV are assumed.[2]In CNT/CNT contact, d corresponds to be the distance
between sp2 electron clouds on contact area of graphenesheets. Thus d should be lower than the graphite interlayer
distance (~0.34 nm). From fig. 3, the corresponding to 0.24
–0.28 nm, which is lower than graphite interlayer distanceand is in good agreement with the assumption.

[1] Inaba et al., The 47th FNTG General Symposium, 2P-7
[2] P. Sutter et al., Nature Materials 7, 406 - 411 (2008).
Corresponding Author: M. Inaba
Tel&Fax: +81-3-5286-3391- 37 - 37 -Folded CNT

Fig. 2 The schematic image of
microscopic folded CNT contact.
-6

Tunneling2
contact resistivity RTC (cm )  4d V  q 2 
 2
RTC 
2me exp  
 2me J T  h d   h 


10

-7

10

1.7×10-8-8

10

8.3×10-9

-9

10

0.15

0.20

0.25

0.30

0.35

Barrier distance d (nm)0.40

Fig. 3 Relationship between
tunneling contact resistivity RTC
and barrier distance d.
E-mail: inaba-ma@ruri.waseda.jp

3-8
Photovoltaic performance of perovskite solar cells
using carbon nanotubes/graphene oxide hole transport layer
Feijiu Wang1, Masaru Endo2, Shinichiro Mouri1, Yuhei Miyauchi1, Yutaka Ohno3,
Atsushi Wakamiya2, Yasujiro Murata2, and Kazunari Matsuda1
1Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
2
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
3
EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan
Photovoltaic applications using nano-carbon materials (carbon nanotube, graphene, andgraphene oxide) have been intensively studied because of their excellent optical andelectronic properties.[1-3] Recent researches on the organo-lead perovskite solar cell have been
drastically progressed, and high photovoltaic efficiency in the perovskite solar cell has beenreported. However, the photovoltaic performance of perovskite solar cell only using carbon
nanotube is not high enough at the current stage. Here, we report photovoltaic properties ofperovskite solar cells using single-walled carbon nanotube (SWNT) and graphene oxide (GO)as the hole transporting layer. Figure 1 shows the current density-voltage (J-V) curves oforgano-lead perovskite solar cell (CH3NH3PbI3) using only SWNT and SWNT/GO layer as ahole-transport layer under AM 1.5 conditions. The J-V curve of perovskite solar cell using
only SWNT layer (perovskite/SWNT) shows a short-circuit current density (Jsc) of 10.5
mA/cm2, an open-circuit voltage (Voc) of 0.73 V, a fill factor (FF) of 64%, resulting in an

References[1] Appenzeller, J. et al., Phys. Rev. Lett. 89, 126801 (2002).
[2] Miyauchi, Y. et al., Nat. Photonics 7, 715 (2013).

2

contributes to reduction of recombination loss as anelectronblockinglayer
andenhancethebuild-in-voltage giving a higher short circuit current
density and open circuit voltage.

Current density (mA/cm )efficiency of 4.9%. In contrast, the J-V curve of perovskite solar cell using SWNT/GO layer(perovskite/SWNT/GO) exhibits high Jsc of 20.1 mA/cm2 associated with Voc of 0.95 V, and a
FF of 61%, which results the high efficiency of 11.7%. The GO in the SWNT network
20
Perovskite/SWNT/GO
η=11.7%

10
Perovskite/SWNT

η=4.9%

0−10[3] Wang, F., Nat. Commun. 6, 6305 (2015).
Corresponding Author: Feijiu Wang

0

0.2

0.4

0.6

Voltage (V)0.8

1Fig. 1 J-V curve of perovskite solar cell
using
only
SWNT
layer
(perovskite/SWNT) and SWNT/GO
layer (perovskite/SWNT/GO)

Tel: +81-774-38-3460, Fax: +81-774-38-3460
E-mail: wang.feijiu.75w@st.kyoto-u.ac.jp- 38 - 38 -

3-9
Preparation of metal oxide nanofilms using graphene templates○Sakae Takenaka1,2, Shuhei Miyake1, Hideki Matsune1, Masahiro Kishida11Department of Chemical Engineering, Kyushu University, Fukuoka 819-0395, Japan
2
JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012

Nanosheet and nanofilm of metal oxides have lately attracted significant attention due totheir specific chemical and physical properties based on their molecular thickness. The
nanosheets which are composed of single crystallites of metal oxides have generally been
prepared by exfoliation of layered metal oxides and hydroxides. The types of metal oxide
nanosheets obtained by this method are inevitably limited because the method requires thelayered compounds as host materials. In the present study, we prepared metal oxide nanofilms
using graphene oxide (GO) as a template [1]. The nanofilms are composed of polycrystallites
of metal oxides.
Dried GO powders were dispersed in cyclohexane containing Ti(OC4H9)4, followed bytreated in the autoclave at 453 K for 8 h. The sample thus obtained was denoted as TiOx/rGO.
The TiOx/rGO was calcined at 723 K in air for 5 h to remove graphene by combustion. The
samples thus obtained was denoted as TiO2 nanofilms.
Figure 1 shows TEM images for TiOx/rGO and TiO2 nanofilm. The TEM image for
TiOx/rGO was very transparent, although the samples contained TiO2 of 20 wt%. Any
particulate compounds were not seen in the TEM image for the TiOx/rGO. On the other hand,elemental mappings for TiOx/rGO indicated the uniform distribution of Ti atoms on thegraphene sheets. FT-IR spectrum for TiOx/rGO suggested the reduction of GO into reduced
GO (rGO) during the treatment of the sample in the autoclave at 453 K. Thus, very thin Ti
oxide species were uniformly stabilized on the rGO in the TiOx/rGO. The TiOx/rGO wascalcined in air at 723 K for removal of rGO. The TEM image of the sample obtained bycalcination (Figure 1b) was very similar to that of TiOx/rGO before calcination (Figure 1a).
The two dimensional structure of the sample maintained unchanged after the calcination of
TiOx/rGO in air, although the rGO was removed by combustion. The thickness of the TiO2
nanofilms was evaluated with AFM image to be ca. 1 nm. The selected area electro diffraction
patterns implied that the TiO2 nanofilms are composed of polycrystallites of anatase TiO2.
These results indicated that TiOx nanofilms were stabilized on the rGO during the treatment of
GO in cyclohexane containing Ti(OC4H9)4 in the autoclave at 453 K. In addition,
free-standing nanofilms composed ofpolycrystallites of anatase TiO2 can beabobtained by the calcination of TiOx/rGO
in air. Various metal oxide nanofilms suchas ZrO2, Nb2O5, Ta2O5 and SnO2 can beprepared by the present method.
[1] S. Takenaka et al. J. Phys. Chem. C 119, 12445(2015).
Corresponding Author: S. Takenaka
Tel: +81-92-802-2752, Fax: +81-92-802-2752,
E-mail: takenaka@chem-eng.kyushu-u.ac.jp

Fig. 1 TEM images for TiOx/rGO (a) and TiO2
nanofilms (b).

- 39 - 39 -

3-10Electrical activation of dark excitonic states in carbon nanotubes○T. Uda, M. Yoshida, A. Ishii, Y. K. Kato*
Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656, Japan

Electric-field effects on exciton states in single-walled carbon nanotubes areinvestigated by simultaneous photocurrent and photoluminescence excitation
spectroscopy. We utilize field-effect transistors with suspended carbon nanotubes inorder to apply longitudinal fields [1]. Photoluminescence imaging and excitation
spectroscopy are performed to locate individual nanotubes and to identify their chirality.
When a bias voltage is applied, we observe an emergence of a new absorption peak near
the first excited state in both photoluminescence and photocurrent spectra [2]. With
excitation at the new peak, photocurrent begins to flow above a threshold bias, while
the luminescence intensity starts to decrease. Furthermore, we have found anotherbias-induced peak at a higher energy in the photocurrent spectra which has a thresholdat a lower bias. Measurements of several nanotubes with different chirality reveal thatthe energy separation between these bias-induced peaks and the ground state of E11
excitons is inversely proportional to the tube diameter. The results suggest that the new
peaks are the dark excited states of the E11 excitons which became optically active dueto the applied fields.
Work supported by KAKENHI (24340066, 26610080), the Canon Foundation, Asahi
Glass Foundation, as well as the Photon Frontier Network Program of MEXT, Japan.
The devices were fabricated at the Center for Nano Lithography & Analysis at The
University of Tokyo. M.Y. is supported by ALPS, and A.I. is supported by MERITand JSPS Research Fellowship.
[1] Y. Kumamoto, M. Yoshida, A. Ishii, A. Yokoyama, T. Shimada, and Y. K. Kato, Phys. Rev. Lett. 112,117401 (2014)..
[2] T. Uda, M. Yoshida, A. Ishii, Y. K. Kato, 6th Workshop on Nanotube Optics and Nanospectroscopy(WONTON2015) P67, Kloster Banz, Germany, June 3, 2015; The Sixteenth International
Conference on the Science and Application of Nanotubes (NT15) P193, Nagoya, Japan, June 30,
2015; manuscript in preparation.

Corresponding Author: Y. K. Kato
Tel: +81-3-5841-7702, Fax: +81-3-5841-7772,
E-mail: ykato@sogo.t.u-tokyo.ac.jp- 40 - 40 -

3-11
Optical transitions in oxygen-doped (5,4) and (6,4) carbon nanotubes○Mari Ohfuchi1, Yoshiyuki Miyamoto2
1

Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba
305-8568, Japan
Oxygen (O) doping of single-wall carbon nanotubes (SWCNTs) has attracted attention
because of their greater luminescence quantum yield than that of pristine CNTs [1]. Low
temperature photoluminescence (PL) experiments have revealed multiple peaks associatedwith different adsorption structures of an O atom [2]. In this study, to advance thefundamental understanding in PL spectra of O-doped SWCNTs, we theoretically investigate
the optical transitions in different type semiconducting CNTs, (5,4) and (6,4).
We employed a finite length model (8 nm) for a SWCNT with the edges terminated byhydrogen atoms. The optimized geometries and the adsorption energies (Fig.1) were obtained[3] using the density functional theory (DFT) code, OpenMX [4]. The optical transitionenergies (Fig.2) and densities (Fig.3) were determined using time-dependent DFT approachbased on STO-3G basis set and B3LYP functional as
implemented in Gaussian program. The “epoxy-b” and“epoxy-c” structures were obtained in addition to the moststable “ether-a” structure for both CNTs. In (5,4), theenergy level of E11* peak originating from the oxidation
sharply drops below the level of the dark states with“epoxy-b” structure; meanwhile this sharp drop is the casewith “epoxy-c” structure for (6,4). This is attributed to thedifferent electronic structures between type I and II of
SWCNTs, which also cause the behavior in the adsorptionenergies (Fig.1). Our results may explain the split of E11
and E11* into three in low temperature PL experiments [2]. Fig.1: Adsorption energies, Ead =Although the setting in the present study is considered E(CNT + O) − E(CNT) − E(O), ofdifferent adsorption structures. The
to be sufficient to describe a qualitative picture [2], results definition of bonds “a”, “b”, and “c” iswith longer CNTs and larger basis sets will also be inserted. The nanotube axis ispresented at the symposium.
indicated by an arrow.
2

Fig.2: Energy shifts of the optical transitions from E11 of pristine
nanotubes. The E11* is red-shifted states originating from theoxidation. The D stands for the optically forbidden dark states.

Fig.3: Spatial distributions of thetransition densities for E11* of (5,4)
nanotubes. Gray sticks represent
carbon−carbon bonds. The electron
and holes are represented in black andlight gray, respectively.

[1] S. Ghosh et al., Science 330, 1656 (2010). [2] X. Ma et al., ACS Nano 8, 10782 (2014).
[3] M. Ohfuchi, J. Phys. Chem. C 119, 13200 (2015). [4] http://www.openmx-square.org/.
Corresponding Author: M. Ohfuchi
Tel: +81-46-250-8194, Fax: +81-46-250-8274, E-mail: mari.ohfuti@jp.fujitsu.com- 41 - 41 -

3-12
Effect of sp3 defect on the electronic states of single-walled carbon
nanotubes determined by in situ PL spectroelectrochemistry
Tomonari Shiraishi1, Tomohiro Shiraki1, Naotoshi Nakashima1,2
1Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2

WPI-I2CNER, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes modified with introduction of a very limited amount of sp3
defect (sp3-doped SWNTs) are interesting novel materials due to their uniquephotoluminescence (PL) with enhanced quantum yields compared to those of pristine SWNTs[1]. The sp3-doping has been achieved by modification with aryl functional groups (Fig. 1),
providing the optical property-enhanced SWNTs with unique dependence on the substituent
groups. However, the detailed mechanisms on the new optical properties induced by thechemical modification and the effect of sp3 defect on the electronic properties of SWNTs havebeen still unclear. One can consider that the appearance of new optical properties is essentially
due to changes in the electronic states induced by sp3 defect on the SWNTs. Thus
characterization of the resulting electronic states is crucial to understand fundamental propertiesof the sp3-doped SWNTs.
In this study, we report the electronic states of the sp3-doped SWNTs and the substituent
effect of aryl functionalization through the in-situ PL spectroelectrochemical method that wedeveloped previously[2]. Fig. 2 shows the evaluated energy levels of the pristine and the sp 3doped SWNTs modified with three different substituents (-OCH3, -Br, and –NO2), in which thehighest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO)
of the sp3-doped SWNTs were found to shift to negative and positive values, respectively,
compared to those of the pristine SWNTs. Interestingly, we clarified that the HOMO of the sp3doped SWNTs showed dependence of the chemical structure of the aryl substituent groups. We
will discuss about a possible mechanism for the energy level shifting on the sp 3-doped at themeeting.

Fig. 1. Chemical structures of sp3-doped SWNT.

Fig. 2. Evaluated energy levels of the pristine and thesp3-doped SWNTs.

[1] Y. Wang et al., Nat. Chem. 5, 840 (2013). [2] N. Nakashima et al., Angew. Chem. Int. Ed. 48, 7655 (2009).
Corresponding Author: Naotoshi Nakashima
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 42 - 42 -

ポスター発表
Poster Preview

1P – 1 ～ 1P – 35
2P – 1 ～ 2P – 35
3P – 1 ～ 3P – 36

1P-1
Regioselectively Arylated Fullerenes by Acid-catalyzed Reaction of
Azafulleroids as an Ambident Base
○Naohiko Ikuma, Koichi Fujioka, Yuta Doi, Ken Kokubo,
Hidehiro Sakurai, Takumi Oshima
Division of Applied Chemistry, Graduate School of Engineering,Osaka University, Suita 565−0871, Japan
Azafulleroid, derived from 1,3-dipolar cycloadditionof azide with C60 followed by nitrogen evolution,
behaves as an ambident nucleophile containing one
basic nitrogen and two reactive bridgehead double
bonds. DFT calculations indicated the larger proton
affinity at the bridged nitrogen for alkyl-substituted
azafulleroid and at the bridgehead Cα-position foraryl substituted one (Fig. 1). Thus, azafulleroid can be
useful synthetic precursor for various fullerene
derivatives, depending on its substituents.
Here, we report the acid-promoted arylation ofvariously substituted azafulleroids to give

Fig. 1. Proton affinities of azafulleroids(B3LYP/6-31G(d,p))regioselectively arylated fullerene derivatives.
Thearylationofalkyl-substituted
azafulleroids

with

CF3SO3H

and aryl
nucleophiles provided 1,4-arylaminofullerenes
2 (Scheme 1). On the other hand, arylation ofaryl-substituted azafulleroids gave tetra- or
penta-adducts 3a/b. XRD analysis showed 3b
had cyclopentenyl center [1], in contrast to thepreviously obtained pentaarylated fullerene
having cyclopentadienyl center [2].
.

[1] N. Ikuma et al., Chem. Asian J. 9, 3084 (2014).
[2] E. Nakamura et al., J. Am. Chem. Soc. 118, 12850(1996).
Corresponding Author: N. Ikuma
Tel: +81-6-6879-4592, Fax: +81-6-6879-4593
E-mail: ikuma@chem.eng.osaka-u.ac.jp- 44 - 44 -Scheme 1

1P-2
Solid-State NMR Studies on the Aggregated Structures of Organic Bulk
Heterojunction Solar Cells with Solvent Additives (III)○Saki Kawano1 and Hironori ogata1,2
1Grad. School of Sci. and Engin. , Hosei Univ. , 2Res.Center for Micro-Nano Technol., Hosei Univ.
E-mail: hogata@hosei.ac.jp

Bulk heterojunction (BHJ) organic solar cells are an emerging technology that has the potential toprovide a low cost photovoltaic devices. It is well known that the nanomorphology of the polymer:fullerene
BHJ is a critical factor which affects the solar cell performance. The addition of processing additives such
as 1,8-diiodooctane (DIO) is widely used approach to increase power conversion efficiencies for manyorganic solar cells[1-2]. Solid-state solar NMR spectroscopy offers several techniques for the investigationof the morphological, structural, and dynamics properties of BHJ organic solar cells.
We have explored the effects of DIO addition of P3HT/PCBM BHJ films on the local crystallinity andmorphology by using solid-state NMR spectroscopy. In this study, we investigated the change in the
crystallinity, morphology, and the properties of molecular motions of P3HT/PCBM BHJ film by adding
another solvent additives(1,8-Octanedithiol(ODT) and 1-Chloronaphthalene(CN)) and also effects ofannealing by using 13C and 1H solid-state NMR spectroscopy.
Mixed solution of P3HT/PCBM of 1:1(w/w) was prepared by mixing P3HT and PCBM into
chlorobenzene at a concentration of 1 wt% for 50 hrs in a glove box under argon atmosphere.

A 3% byvolume of additive ODT or CN was then dropped into the solution and then stirred for 1 hr. The solution
was filtered using 0.45μm filter before making films to remove undissolved materials. P3HT/PCBM BHJ
films were prepared by dropping the solution in a glass plate and dried in a glove box under argon
atmosphere for 40 hrs and then put in the vacuum for 24hrs. Dried film were removed from the glassplateand sealed into 4 mm zirconia NMR rotor. Solid-state NMR spectra were collected on Bruker AVANCE300
spectrometer.
Figure 1 shows the 13C-CP/MAS NMR spectra of(a)P3HT/PCBM BHJ film with CN additive

and(b)P3HT/ PCBM BHJ film. The detailed results of thechange of morphology and the properties of molecularconformations of P3HT/PCBM BHJ films by CN or
ODT addition will be presented.
Figure 1. 13C-CP/MAS NMR spectra ofReferences:(a)P3HT /PCBM BHJ film with CN additive

1) J. K. Lee et al., J.Am.Chem.Soc.,130(2008)3619.

and (b)P3HT/PCBM BHJ film.

2) B.R.Aïch et al, Organic Electronics,13 (2012)1736.

- 45 - 45 -

1P-3
A new method for the isolation of the hidden metallofullerenes like Y2@C80○Natsumi Nakatori1, Aimi Togashi1, Wataru Fujita2, Koichi Kikuchi1,
Yohji Achiba1, Takeshi Kodama1
12

Department of Chemistry, Tokyo Metropolitan University, Hachioji, 192-0397, Japan

Department of Information and Basic Science, Nagoya City University, Nagoya, 467-8501,
Japan

A “hidden” or sometimes called as “missing” fullerene means the fullerenes those whichhave never been isolated by a conventional separation technique, although their generations
themselves have highly been expected. The metallofullerene, Y2@C80, encapsulated in Ihsymmetry C80 cage is a typical example to be included in such a class of fullerene. Actually,in 2011, Kodama et al. succeeded in extracting Y2@C80 anion directly from the raw soot witha mixed solvent of triethylamine (TEA) and acetone and suggested that some M2@C80 such as
Y2@C80 would be simply hidden in the raw soot due to their electronic properties, resulting intheir isolations beyond the range of possibility [1]. In the previous study, however, theisolation of Y2@C80 was failed under the conventional HPLC condition, because of theirinstabilities in toluene. Therefore, no structural evidence on Y2@C80 has been deduced so far.
In this study, we intended to develop an ion-pair chromatography for isolating Y2@C80 byleaving the anion form as it is. Moreover, we also intended to characterize the cage structureof Y2@C80 whether it is of Ih symmetry or not.
Soot containing Y-metallofullerenes was produced by direct-current (40 A) arc dischargeof Y/C composite rods (Y:C=2:98) under a 500 Torr He atmosphere. The raw soot was
extracted for 8 h with a mixed solvent of TEA and acetone. The isolation of Y2@C80 was
accomplished by three-stage HPLC. Acetone with an ion-pair reagent, tetrabutylammonium
bromide, was used as an eluent in all the stages. Firstly, the portion of metallofullerenes wasroughly separated, and secondly, Y2@C80 with some impurities was separated. A Buckyprep
column was used in the first and second stages. Finally,
Y2@C80 was isolated with a Buckyprep-M column. As
shown in Fig.1, the UV-vis-NIR absorption spectrum of
the isolated Y2@C80 anion is very similar to that of
Ce2@C80(Ih) anion, which is generated electrochemically.
Therefore, it is strongly suggested that the Y2@C80
isolated by the present method has C80(Ih) cage. The
method combining the ion-pair chromatography with themixed solvent extraction is a powerful tool to explore theworld of hidden metallofullerenes.

[1] T. Kodama, et al. The 41st Fullerenes-Nanotubes-Graphene
General Symposium 31 (2011).
Corresponding Author: Takeshi Kodama
E-mail: kodama-takeshi@tmu.ac.jp
Tel:+81-42-677-2530, Fax:+81-42-677-2525- 46 - 46 -Fig.1 UV-vis-NIR absorption
spectra of Y2@C80 anion and
Ce2@C80 anion. The inset showsthenegative
LD-TOF-MS
spectrum for Y2@C80 anion.

1P-4
An atlas of thermoelectric power of semiconducting carbon nanotubes○ N. T. Hung, A. R. T. Nugraha, R. Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Thermoelectric figure of merit (ZT) is significantly enhanced in one-dimensional (1D)
semiconducting nanostructures [1], in particular for semiconducting single wall carbon
nanotubes (s-SWNTs), which provide a unique opportunity for high-performance
thermoelectricity with large thermoelectric power (TEP) [2]. However, the s-SWNTs can havea wide range of diameter and different geometrical structures, which are denoted by two integers(𝑛𝑛𝑛 𝑛𝑛) known as chirality [3]. Finding a suitable s-SWNT chirality that has a specific value of
TEP is thus necessary to apply the s-SWNT in thermoelectric devices.
In this work, we develop an atlas of the TEP for many s-SWNTs within a diameter range of
0.5–1.5 nm by using the Boltzmann transport formalism combined with an extended tightbinding model (ETB) based on the density functional theory (DFT) [4]. We find that the TEPof the s-SWNTs increases with decreasing the tube diameter. For the small s-SWNT withdiameter less than 0.6 nm, the TEP can reach a value of 2000 VK-1, which is about 3-4 times
larger than commonly used semiconducting
materials in thermoelectric applications.
We derive a simple formula to reproduce
the numerical calculation and we find that
the TEP of the s-SWNTs has a band gap
term, which explains the shape of the TEP
plot as a function of diameter that looks
similar to the so-called Kataura plot [4,5],
showing the 2𝑛𝑛 𝑛 𝑛𝑛 family pattern (seeFig. 1). Our results highlight potential
properties of s-SWNTs as thermoelectricmaterials.

Fig. 1: Thermopower and band gap for s-SWNTs withdiameter of 0.5–1.5 nm.

[1] L. D. Hicks et al., Phys. Rev. B 47, 16631R (1993).
[2] K. Yanagi et al. Nano Lett. 14, 6437 (2014).
[3] R. Saito, G. Dresselhaus, M. S. Dresselhaus, “Physical properties of carbon nanotubes”, Imperial college press(1998).
[4] G. G. Samsonidze et al., Appl. Phys. Lett. 85, 5703 (2004).
[5] R. Saito et al., Phys. Rev. B 61, 2981 (2000).
Corresponding Author: Nguyen Tuan Hung
TEL: +81-22-795-6442, FAX: +81-22-795-6447, E-mail: nguyen@flex.phys.tohoku.ac.jp- 47 - 47 -

1P-5
Stability of chemisorbed oxygen on carbon nanotube surface○Gergely Juhász1, Naotoshi Nakashima2
1

Department of Chemistry, Graduate School of Science, Tokyo Institute of Technology,
Tokyo 152-8550, Japan1
Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan

Carbon nanotubes have unique luminescent properties, including sharp, well defined
emitting peaks in the NIR region. However, the weak luminescent intensity is a major
disadvantage practical applications. Covalent functionalization of nanotubes often induces
drastic changes in the optical properties. Gosh et al. have reported [1] an ozonization methodthat leads to oxygen doped CNTs with red-shifted, bright peaks in their luminescence
spectrum [2]. This brighter luminescence can have a great practical importance for industry.
For better understanding the formation and properties oxygen doped sites, we studied thestability and migration of chemisobed oxygen on the surface of single walled carbon
nanotubes (SWNTs) with different chirality. For the calculations we used models withperiodic boundary condition and DFTB method, which has already been useful in ourprevious works. To estimate the activation energy of the migration on the surface, we used the
Nudged Elastic Band (NEB) method as implemented in ASE (as illustrated in Figure 1).
The curvature of thenanotube surface hasstrong effect on thestabilityofdifferent
oxygen sites. Nanotubes
with high θ angle, like
(6,4) and (6,5) strongly
stabilize an ether like O
sites. On the other hand,tubes with low θ angle,
like (9,2) or (9,1) thisenergy difference is muchsmaller. Interestingly, thecurvature effect on the O
migration is relatively
small, and the required
activation energy is highFig.1: The activation energy of the oxygen migration between two stable
for all the tubes and O
chemisorption sites on (7,0) tube surface.
sites.
[1] S. Ghosh et al. Science 330, 1656 (2010).
[2] Y. Miyauchi et al. Nature Photonics 7, 715 (2013).
Corresponding Author: G. Juhász
Tel: +81-03-5734-2357, Fax: +81-03-5734-2357,
E-mail: juhasz@chem.titech.ac.jp- 48 - 48 -

1P-6
Anomalous potential properties between CNTs under a weak external
electric field○U Ishiyama and Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba
305-8577, Japan
Carbon nanotubes (CNTs) are attracting much attention because of it unique geometric andelectronic structures those allow them being an emerging material for semiconductor
electronic devices in the next generation. It has been shown experimentally that CNTs work
as a conducting channel of field-effect transistors (FETs), in which the CNTs form a film
structure with nano-scale interfaces among these CNTs. However, the fundamental propertiesof these CNT-CNT interfaces under an electric field are not fully understood. In this work, we
aim to elucidate the electronic properties of the CNT thin films, which consist of the bilayerof CNTs, under the external electric field.
All calculations are performed by using the density functional theory with local density
approximation. We use an ultrasoft pseudopotential to describe the interaction between
valence electrons and ions. The effective screening medium (ESM) method is applied toinvestigate electronic properties of CNT under the parallel external electric field in theframework of the first-principles calculations. Here, we consider thin films of CNTs
consisting of (11,0), (12,0), (13,0), (14,0), and (15,0) CNTs forming CNT bilayer structure
mimicking CNT-FET device (Fig.1).
Figure 2 shows the electrostatic potential of a CNT bilayer consisting of (13,0) and (11,0)
CNTs under the parallel electric field of 0.0154 V/Å. The potential exhibit unusual fearture at
the space between CNTs: The potential possess opposite gradient at the spacing against theexternal electric field. The anomalous potential properties strongly depend on the external
electric field: The opposite field against the external field vanishes by increasing the external
electric field.

Fig.1

A structural model of CNT thin films

Fig.2

Electrostatic potential of a CNT thin film underan external field.
Corresponding Author: U Ishiyama
Tel: +81-29-853-5600 (ext. 8233), Fax: +81-29-853-5924,
E-mail: yishiyama@comas.frsc.tsukuba.ac.jp- 49 - 49 -

1P-7
Dependence of Thermoelectric Properties on
Chiralities of Single Wall Carbon Nanotubes○Yuki Oshima, Yoshimasa Kitamura, Hideki Kawai, Yutaka Maniwa, Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Minami-Osawa 192-0397, Japan
Thermoelectrics are a very important technology for efficiently converting waste heat into
electric power. As Hicks and Dresselhaus have proposed,[1] for realization ofhigh-performance thermoelectric devices, it is important to use low-dimensional materials andto tune their Fermi level. In this context, we have reported across-bandgap p-type and n-type
control over the Seebeck coefficients of semiconducting single wall carbon nanotube(SWCNT) network films by Fermi level tuning through electrolyte gating.[2] By freezing the
motion of the electrolyte, we fabricated thermoelectric devices using the precisely p-type andn-type tuned semiconducting SWCNT films.[2] SWCNTs have various electronic structures
depending on their chiralities. It has been expected that Seebeck coefficient will besignificantly influenced by the band-gap width,[3] thus the thermoelectric properties will
largely depend on their chirality. Therefore, clarification of relationships between chiralities
and thermoelectric properties is of great importance for their applications as well as basic
science. Recent progress of purification techniques enables us to prepare metallic,semiconducting and single-chiral states of SWCNTs.
In this study, we prepared (6,5) SWCNTs (diameter of 0.76 nm) through gel-purification
techniques and investigated their thermoelectric properties and compared the results withthose of semiconducting SWCNTs with diameter of 1.4 nm.
The results are shown in Figure 1.
The peak gap between the P-peak andN-type peak in (6,5) SWCNTs waslarger than that in Semi 1.4 nm
SWCNTs. The gap width is almost
consistent with the capacitance gap of(6,5) SWCNTs, which reflects thesemiconducting gap of the sample.
Those results indicate the chiralities of
SWCNTs will significantly influence on
Seebeck coefficient and thermoelectricperformance of SWCNTs.
[1] Hicks & Dresselhaus, Phys. Rev. B 47,
16631 (1993)[2] Yanagi et al., Nano Lett. 14, 6437
(2014)[3] X. Tan et al., Nanoscale Res. Lett. 7,116 (2012)

Corresponding Author: K. Yanagi
Tel: +81-42-677-2494,
Fax: +81-42-677-2483,
E-mail: yanagi-kazuhiro@tmu.ac.jp

Fig.1: (Top) Comparison between Seebeck coefficient of
Semi with 1.4 nm-SWCNTs and (6,5) SWCNTs. (Bottom)
Density of states (DOS) of Semi with 1.4 nm-SWCNT
and (6,5) SWCNT calculated using the tight-binding
model.

- 50 - 50 -- 51 -

1P-9
Carbon nanotube papers capturing Si nanoparticles
for binder-free anodes of lithium ion batteries○Takayuki Kowase, Kei Hasegawa, and Suguru Noda*
Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan
Si is a candidate material for lithium ion battery anodes due to its high theoretical capacity(4200 mAh/gSi), however it suffers from the rapid degradation due to its huge volume change(up to 400%) during charge/discharge cycles. Si anodes with various nanostructures havebeen developed and encouraging cycle performances have been demonstrated. However, mostof them were fabricated with small loads of Si (about 1 μm or less) on thick and heavy Cu
current collectors (15 μm or thicker) through complicated processes. For practical application,
it is essential to enhance the Si loads through easy/simple processes.
In this work, we propose and develop Si-based anodes by capturing Si nanoparticles(Si-NPs) at a high load within carbon nanotube (CNT) papers through simple processes.
Si-NPs were synthesized by rapid vapor deposition method [1], in which Si source was heated
to > 2000 C (well above the melting point) and evaporated in <1 min under low-pressure Ar.
Sub-millimeter-long few wall CNTs by fluidized bed chemical vapor deposition (CVD)method [2] were used, which were shown effective in capturing activated carbon particles forelectrochemical capacitor electrodes [3]. Si-NPs and CNTs were co-dispersed in isopropanoland filtrated to yield self-supporting Si/CNT films. Finally, carbon layer was deposited by
CVD from C2H2 to enhance the connection between Si-NPs and CNTs.
Si-NPs were synthesized with a range of diameter, from a few tens nm at 5 Torr to a few
hundreds nm at 50 Torr, at 20−60% yields (Fig. 1). Co-dispersion and filtration yielded
self-supporting paper, in which CNTs hold Si-NPs uniformly (Fig. 2). Carbon coating realized
high discharge capacities of ~1250 mAh/gSi and ~0.7 mAh/cm2 at the 100th cycle (Fig. 3).

Fig. 1 SEM images (a,b,c,d) and yield (e) of Si-NPs.

Fig. 2 SEM images of a Si/CNT film.

Fig. 3 Cycle performances of Si-NP(10 Torr)/CNT anodes with and without C-coating (a) and those using
various Si-NPs (b). Conditions: EC/DEC (v/v=1/1) + 1 wt% VC, 0.005−1.2 V (Li/Li+), 0.3C (1.26 A/gSi).
Acknowledgements: The authors thank Prof. Osaka and Prof. Momma in their support in making coin cells. This
work is supported in part by Grant-in-Aid for Scientific Research (A) #25249111 from MEXT, Japan.
[1] J. Lee and S. Noda, RSC Adv. 5 (4), 2938-2946 (2015).
[2] D.Y. Kim, et al., Carbon 49, 1972-1979(2011).
[3] R. Quintero, et al., RSC Adv. 4 (16), 8230-8237 (2014).
Corresponding Author: S. Noda, Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 52 - 52 -

1P-10Computational analysis of inelastic electronic transport properties
in single-walled carbon nanotubes
Keisuke Ishizeki1, Kenji Sasaoka2, Takahiro Yamamoto1
1
2

Department of Electrical Engineering, Tokyo University of Science
Organization of Advanced Science and Technology, Kobe University

Development of LSI technology based on downsizing CMOS transistors will reach a limit
due to process limitation in the near future. For more development of the performance, singlewalled carbon nanotubes (SWNTs) are potential candidates for channel materials of CMOS
transistors and wiring materials in LSI circuits because of their high carrier mobility and theirstability for the current density. As the electronic devices are usually operated at room
temperature or more, it is expected that electronic transport properties of SWNTs are subjected
to influence of phonon scattering. Moreover, it is expected that electronic transport in shortlength SWNTs belong to a crossover regime between the ballistic and diffusive transport
regimes. For the above reasons, it is needed that electronic transport properties of SWNTs areinvestigated at finite temperature from a quantum-mechanical point of view.
We have developed a new quantum-transport simulation method to investigate inelastic
electron transport in nanoscale materials including electron-phonon interaction. In this work,
we have calculated the inelastic current flowing through both semiconducting SWNTs (sSWNTs) and metallic SWNTs (m-SWNTs) with various tube lengths at respective temperaturesusing the new simulation method. As is expected, we have confirmed that the electric resistance
R of both s-SWNTs and m-SWNTs increases (from the quantum resistance R0) with tube length
L. In addition, the rate of resistance increase, dR/dL, becomes large with temperature, as theelectron-phonon scattering increases with temperature. Moreover, the electric resistance ofsubmicron-length m-SWNTs is much smaller than that of s-SWNTs. These simulation results
are in agreements with previous results [1]. Thus, the new simulation method we developed canbe applied to various transport features of SWNTs and other nanoscale materials.
[1] T. Ando, J. Phys. Soc. Jpn. 74, 777 (2005).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1492
E-mail: takahiro@rs.tus.ac.jp- 53 - 53 -

1P-11Development of Poly(vinylsulfonic acid) wrapped Multi-Walled Carbon
Nanotube for Fuel Cell Electrode Catalyst○Akiyo Nagashima1, Tsuyohiko Fujigaya1,2, Naotoshi Nakashima1,2
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Polymer electrolyte fuel cells (PEFC) are considered as one of the promising powersources for automobile and house in near future due to their high energy conversion efficiency
and compactness. Generally, Pt loading carbon black are used as catalyst due to low cost.
However, the low durability due to its low chemical stability and introducing defect as Pt
binding site was pointed out. To overcome this issue, we used multi-walled carbon nanotube(MWNT) as carbon support instead of carbon black since MWNT is superior in terms ofelectrochemical durability. In our group, MWNT are wrapped with anchoring polymer,
polybenzimidazole (PBI), to load Pt without defect sites[1]. We found PBI-wrapped MWNT
has high durability due to homogeneous and stable Pt nanoparticles as well as their structural
intactness. Although this PEFC showed high durability, this catalyst had large overvoltage,
probably because the low ionic conductivity of proton transporting material,poly(vinylphosphonic acid) (PVPA)[2]. Therefore, in this study, we introducedpoly(vinylsulfonic acid) (PVSA) having higher proton conductivity than PVPA as new protontransporting material to increase ionic conductivity instead of PVPA (Fig.1).
PBI

Pt

PVSA

MWNT
Fig.1 Illustration of the method of synthesis PVSA-coated catalyst.

Cell voltage / V

Single cell tests were performed using three Membrane Electrode Assembly (MEA)
containing the PVPA-, PVSA- and Nafion- coated catalysts in the gas diffusion electrode,
where Nafion117 were used as the membrane. The performance of MEAs was measured at 80ºC with humidification and atmospheric1pressure using H2 at the anode and air at thecathode. As shown in Fig. 2, PVSA-coated0.8
catalyst showed higher I-V performance than
0.6
PVPA coating catalyst. We assumed thathigher ionic conductivity of PVSA thanNafion coating
0.4
PVPA lead the low overvoltage. However, it
Catalyst
revealed that the diffusion overvoltage of
0.2
PVSA-coated catalyst was larger than that of
Nafion-coated catalyst.
PVPA coating
PVSA coating
Catalyst
0 Catalyst[1] T. Fujigaya, N. Nakashima, Adv. Mater. 25, 1666
0
0.2 0.4 0.6 0.8
11.2(2013).
-2
Current density / A cm
[2] N. Nakashima et al, Sci. Rep. 3, 1764 (2013).
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842
E-mail: fujigaya-tcm@mail.cstm.kyushu-u.ac.jp

Fig.2 I-V curves of the MEAs having PVPA-, PVSAand Nafion-coated catalysts measured at 80 ˚C under
100%RH, using H2 and air anode and cathode,respectively.

- 54 - 54 -

1P-12
Flexible and semi-transparent film heater for temperature range higher
than 100 °C using single-wall carbon nanotube film
○Daiki Kobayashi, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai, Osaka 599-8531 Japan

Temperature(°C)

Transparent electronics device is one of emerging fields of recent electronic devices. A
flexible and semi-transparent heater with quick response is an important component for thisapplication. The flexible heater with transparency would provide visibility for heating process
which might be useful for material science for investigation of temperature dependence of
micro scale structural change such as phase transition of polymer. Here, we report on a
flexible and semi-transparent film heater for temperature range higher than 100 °C using
single-wall carbon nanotubes and polyimide film.
A single-wall carbon nanotube ink (0.1 wt% in water, WaterSolutionGen 2.3 (KH
Chemicals)) was used for fabrication of CNT film heater, which was formed by spray coating
method onto polyimide film (1.5×1.5 cm2, 50 m) at 180 °C. Note that the polyimide film
was coated with 15-nm-thick SiO2 layer for hydrophilicity. The transient response of surface
temperature of the heater was measured using thermography in ambient air. We have prepared
3 film heaters with different electrical resistivity of 134, 250, and 412 , where the opticaltransparencies were varied from 71 to 82.1%, where the light absorption of the polyimide film
was corrected.
Figure 1 shows the electro-thermal response of the film heaters under the application of
15 V. The surface temperature of the film with a resistivity of 134  reaches to 160 °C within
5 s. Although the temperature response at rise includes information not only of the thermal
properties of the film but also of the temperature dependence of the electrical resistance, thetemperature response at fall-down only depends on the thermal properties of the film such as
thermal conductivity, heat capacity and heat conduction to ambient air. At fall-down response,
all of the film heaters show the almost identical time constant. The heat flow analysis using
finite element method with heat losses
to ambient air and support of the180
heater revealed that the obtained
heater response is governed by the thinpolyimide film, which gives the same
140
time constants for fall-down response.
Thus, we have successfully
fabricated the semi-transparent film
100
heater for temperature range higher
than 100 °C through simple
60
fabrication process using spray coating
method.

20
Corresponding Author: S. Akita
Tel: +81-72-254-9261
E-mail:akita@pe.osakafu-u.ac.jp

0

5

10

15

20

Time (s)2530

Fig.1 Electro-thermal response of film heaters withdifferent electrical resistivity.

- 55 - 55 -

1P-13Ultra-high sensitivity carbon nanotube biosensors
based on redox cycle process○Takuya Ushiyama1, Nguyen Xuan Viet1, Shigeru Kishimoto1, and Yutaka Ohno1, 2
1Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
2
EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan

Carbon nanotube (CNT) is useful electrode material for electrochemical biosensors
because of its wide potential window and rapid electron transfer kinetics [1]. Excellent
electrochemical properties [2] and ultra-high sensitivity in biomolecule detection [3] of
CNT microelectrodes have been reported. In the previous reports, however, measured
signal current was quite small as ~nA, so that, highly-sensitive galvanometer or
potentiometer was necessary to ensure sufficient signal-to-noise ratio for the analysis.
The signal current density, hence the sensitivity can be increased drastically byintroducing redox cycle in detection process [4]. In this work, we have fabricatedinterdigitated electrodes with a CNT thin film to realize high-sensitivity electrochemical
biosensors based on the redox cycle.
Figure 1 shows a fabricated CNT interdigitated electrode (CNT-IDE) consisting of
two working electrodes. The redox cycle, i.e., repetitive oxidation and reduction
reactions of analyte molecules, are caused between two working electrodes. The CNT
thin film was formed by the dry transfer process based on floating-catalyst CVD, andthen patterned by conventional micro-process. A PMMA cover layer was formed on thesample surface, except for the CNT-IDE region, so that, gold interconnections areelectrically separated from analyte.
The electrochemical property of the CNT-IDE was evaluated by measuring cyclic
voltammetry of K4[Fe(CN)6] with four-electrode configuration. The CNT-IDE showedvery high collection efficiency of 95%.
Measured signal current was about 1000
times larger than the previous CNT
microelectrodes [3]. The current density
was also about 10 times larger. This isprobability due to the effect of redox
cycle.
Fig. 1 Fabricated CNT-IDE.
[1] I. Dumitrescu et al, Chem. Commun., 45, 6886 (2009)[2] W. Harreither et al, Anal. Chem., 85, 7447 (2013)[3] N.X. Viet et al, The 47th FNTG general symposium 3P-4 (2014)[4] D.G. Sanderson and L.B. Anderson, Anal. Chem., 57 2388 (1985)
Corresponding Author: Y. Ohno
Tel: +81-52-789-5387, Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp- 56 - 56 -

1P-14Highly thermal durable fluorinated rubber and CNT composite○Seisuke Ata1,2, Ayummi Nishizawa1, Takaaki Mizuno2, Eiichi Usuda1, Shigeki Tomonoh1,2,
Takeo Yamada1,2 and Kenji Hata1,2
1Nanotube Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8565, Japan
2
Technology Research Association for Single Wall Carbon Nanotubes (TASC), Tsukuba,
305-8565, Japan
Elastomer and rubber have soft and elastic properties, therefore one of their main applicationis sealing materials for connection part. However, elastomer is weak for heat derived bythermal degradation of polymer chain with heat-radical. The low-heat resistance of elastomer
limits the wide-range application of elastomers. The key to increasing thermal resistance ofelastomer is quenching heat-radical in elastomer at high temperature. CNT have been known
as a radical scavenging material. We provide high-thermal resistance elastomer by adequately
adding small amount of carbon nanotubes for elastomer. The heat resistance was estimated bytime dependence of storage modulus under isothermal condition (200 oC). The high thermal
resistance of CNT/rubber composite have achieved by excellent radical scavenging effect of
CNT. By adding 1 wt% of CNT, the heat resistance of elastomer increase in 100K comparedwith pure elastomer. This CNT/elastomer composite have large possibility for oil-sealingmaterial in oil drilling, sealing material of gas engine as a private power generator and sealingmaterials for automobiles.
This presentation is based on results obtained from a project commissioned by the New
Energy and Industrial Technology Development Organization (NEDO).
Corresponding Author: S.Ata
Tel: +81-22-861-4654, Fax: +81-22-861-4851,
E-mail: ata-s@aist.go.jp

Figure. Inverse number of Young’s modulus versus upper limit temperature to use.

- 57 - 57 -

1P-15Highly stable carbon nanotube/ultrathin cross-linked polymer hybrids forbiomedical applications○Yusuke Tsutsumi1, Tsuyohiko Fujigaya1,2, Naotoshi Nakashima1,2
1Department of Applied Chemistry, Graduate School of Engineering, Kyushu University,
2744 Motooka, Fukuoka 819-0395, JapanWPI I2CNER, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) are attracting increasing attention in biologicalapplications because of their unique thermal, physical and optical properties. As-produced
SWNTs are not soluble in many solvents and form aggregation due to the strong intertube vander Waals interactions. Since the aggregation of SWNTs has a risk of toxicity in vivo, afunctionalization of SWNT surfaces is important in biological applications. Here, as a novel
functionalization method, we demonstrate a method to prepare SWNTs/ultrathin cross-linked
polymer hybrids by the polymerization in the interior of surfactant micelle encapsulatingaround SWNTs (Fig. 1) [1].
Surfactant micelle

Monomer＋
Cross-linker

Surfactant

Sonicationin water
SWNT

Removalof Surfactant

Heating at 70 ˚C
SWNT

Cross-linked polymer

SWNT/ultrathincross-linked polymer

Fig. 1. Schematic illustration showing the preparation of SWNT/ultrathin cross-linked polymer.

Poly(N-isopropylacrylamide) was used as apolymer for SWNT-wrapping and the composites
were synthesized by radical polymerization. Fig. 2
shows AFM image of the obtained composites. In this
AFM image, many needle-like structures wereobserved and the average diameter of the needle-likestructures was found to be 3.05 nm (N=59).
Considering that the average SWNT diameter in thisstudy is ~1 nm, the thickness of the cross-linked
PNIPAM was determined to be ~1 nm. Furthermore,
1 mmfrom the absorption and emission measurement of thecomposite materials, the absorption and emission
Fig.2: AFM image of the SWNT
peaks of the isolated SWNTs were observed in the after the polymerization.
near-IR region. These results show that SWNT
structures are kept almost intact. Since the composites also have high stability inaqueous solution upon heating, freeze-drying and the addition of a large amount of
surfactant, we expect the composites are attractive materials for biomedical
applications.
[1] Y. Tsutsumi, T. Fujigaya, N. Nakashima, RSC. Adv., 2014, 4, 6318.
Corresponding Author: N. Nakashima
Tel: +81-92-802-2840, Fax: +81-92-802-2840, E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 58 - 58 -

1P-16
Purification of metal/semiconductive single-wall carbon
nanotubes in two immiscible aqueous solution phase
Ryo Ishida1, Marin Ohtsuka1, Naoki Kanazawa1, ○Shinzo Suzuki1, Akira Ono2
1

2

Department of Physics, Kyoto Sangyo University, Kyoto 603-8555, Japan
Department of Engineering, Kanagawa University, Yokohama 221-8686, Japan

In 2013, C.Y. Khripin et al. first reported about spontaneous partition of single-wallcarbon nanotubes (SWNTs) in polymer-modified aqueous solution phase [1], where metal/
semiconductive SWNTs of large diameter (> 1.2 nm) were shown to be successfully separated
in two immiscible aqueous solution (i.e., in polyethylene glycol (PEG) and dextran (DX)solution). After that, this technique has been extensively used for not only for SWNTs
dispersed in sodium (SC) solution, but those dispersed in DNA solution as well, by usingslightly modified combination of two immiscible aqueous solution [2, 3].
In the previous symposium, we reported about the application of Raman spectroscopy inorder to evaluate the ratio of metal/semiconductive single-wall carbon nanotubes in these
immisible solution by changing excitation photon energy (532 nm and 633 nm) [4]. In thispresentation, several experimental findings obtained by Raman spectroscopy in order to findthe best experimental condition for the separation of metal/semiconductive carbon nanotubes
dispersed in sodium cholate (SC) solution were summarized, and discussed in comparison
with the experimental condition described in the Khripin’s paper [1].
References:[1] C.Y. Khripin et al., J. Am. Chem. Soc., 135, 6822-6825(2013).
[2] G. Ao et al., J. Am. Chem. Soc., 136, 10383-10392(2014).
[3] H. Gui et al., Nano Lett., 15, 1642-1645(2015).
[4] N. Kanazawa et al., Proc. of the 46th Fullerene-Nanotube-Graphene General Symposium. 1P-27(2014).
Corresponding Author: Shinzo Suzuki
Tel: +81-75-705-1631, Fax: +81-75-705-1631,
E-mail: suzukish@cc.kyoto-su.ac.jp- 59 - 59 -

1P-17
Synthesis of Single-Walled Carbon Nanotubes from Rh Catalysts
at Low Temperature by Alcohol Gas Source Method in High Vacuum○Akinari Kozawa1, Hoshimitsu Kiribayashi1, Seigo Ogawa1, Takahiro Saida2,
Shigeya Naritsuka1, Takahiro Maruyama1,2
1

Department of Materials Science and Engineering, Meijo Univ., 1-501 Shiogamaguchi,
Tempaku, Nagoya 468-8502, Japan
2 Department of Applied Chemistry, Meijo Univ., 1-501 Shiogamaguchi, Tempaku, Nagoya
468-8502, Japan
Single-walled carbon nanotubes (SWNTs) have been anticipated for application in a lot of
future nanodevices. To fabricate SWNT electronics devices, it is important to grow SWNTs
with uniform chirality and diameter at low temperature. So far, we have reported SWNT
growth using Pt catalysts and succeeded in obtaining SWNTs with small diameters below 1.2
nm [1]. This suggests that metal catalysts with high-melting points are effective to grow
SWNTs with small and uniform diameters. However, SWNT yield from Pt catalysts was small
at a growth temperature of less than 600ºC. In this study, we carried out SWNT growth by
CVD using Rh catalysts, whose melting point is 1966°C. By optimizing growth conditions,
we obtained SWNTs with narrow diameter distribution at a growth temperature of 400ºC.
After deposition of Rh catalyst on Al2O3/SiO2/Si substrates, SWNT growth was carried out
using the alcohol gas source method in a high vacuum [1]. The growth temperature was set
between 400ºC and 600ºC, and the ethanol pressure was varied between 1×10-5 Pa and 1×10-2
Pa. The grown SWNTs were characterized by FE-SEM, TEM and Raman spectroscopy.
Fig. 1 shows the Raman spectra of SWNTs grown from Rh catalysts on Al2O3/SiO2/Si
substrates. The growth temperature is between 400 and 600ºC, and ethanol pressure is
optimum. When the growth temperature was decreased to 400ºC, the G band intensity was
reduced, but the RBM peaks were still observed. As the growth temperature decreased, the
SWNT yield decreased,
but
their
diameter
distribution
becamenarrower. Our results
indicate that Rh catalyst issuitableforlowtemperature growth of
SWNTs
with
the
smaller-diameter and thenarrower
diameter
distributions.

Fig.1 Raman spectra of SWNTs grown at 400～600℃[1] T. Maruyama et al. Mater. Express 1 (2011) 267.
Corresponding Author: T. Maruyama
Tel: +81-52-838-2386, Fax: +81-52-832-1179,
E-mail: takamaru@meijo-u.ac.jp- 60 - 60 -

1P-18A Growth Mechanism of (6,5)-Nanotube Cap
on the Basis of Vibronic Coupling Density Analysis◦ Naoki Haruta1 , Tohru Sato1,2 , Yohji Achiba3 , Takeshi Kodama3 , Hirofumi Sato1,2 ,Haruo Shiromaru3
1 Department of Molecular Engineering, Graduate School of Engineering,

Kyoto University, Kyoto, 615-8510, Japan
2 Unit of Elements Strategy Initiative for Catalysts & Batteries, Kyoto University,

Nishikyo-ku, Kyoto 615-8510, Japan
3 Department of Chemistry, Tokyo Metropolitan University, Hachioji 192-0397, Japan

Carbon nanotubes (CNTs) have received much attention in the ﬁeld of material chemistrybecause of their unique electronic, mechanical, and structural properties [1]. Although thechirality control of CNTs is important for their potential applications, it is still diﬃcult because
the growth mechanism of CNTs has not been decisively clariﬁed. Achiba et al. have proposed apossible growth model of CNTs by the laser ablation method with metal-carbon composites [2,3]:(1) carbon caps are produced in gas phase at high temperature; (2) the caps are adsorbed onto
metal/metal-carbon nanoparticles; (3) small carbon clusters such as C2 are inserted successively
into edges of the caps on the nanoparticles, leading to tube-like structures.
On the basis of this model, C43 (1) [Fig. 1 (a)] (a)(b)(c)
is considered to be one of the typical cap structures yielding an abundant CNT, (6,5)-CNT [4].
A question arises: what is the precursor ofC43 (1)? In this study, we discuss the ﬁnal stepto yield C43 (1). If the C2 insertion is assumed,(e)(f)
ﬁve types of C41 isomers can be candidates for (d)the precursor of C43 (1) [Fig. 1 (b–f)]. The most
likely precursor can be determined by considering
whether the regioselectivity of each C41 isomer
gives C43 (1) or not.
The frontier orbital theory has a diﬃculty in
Fig. 1: (a) C43 (1), (b–f) C41 (1–5).
predicting the regioselectivities of π-conjugatednanocarbons including fullerenes and graphene fragments because their frontier orbitals are
sometimes strongly delocalized [5,6]. One way to overcome this diﬃculty is the use of vibronic
coupling density (VCD) theory [5–7], in which not only electronic structures but also vibrational
ones are taken into account. In this study, in order to determine the precursor of C43 (1), weapply the VCD analysis to the ﬁve C41 isomers which are hydrogen-terminated as theoreticalmodels of the C41 isomers supported by nanoparticles. According to our results, C41 (5) has alarge VCD distribution localized around the bay region leading to C43 (1). This is in contrast
to the other C41 isomers. Moreover, the C2 attack on C41 (5) gives larger stabilization due tovibronic couplings. C41 (5) is therefore considered to be the most likely precursor of C43 (1).
[1] R. H. Baughman et al., Science 297, 787 (2002). [2] H. Kataura et al., Carbon 38, 1691 (2000). [3] Y. Achiba,
Mol. Sci. 6, A0055 (2012). [4] Q. Wang et al., ACS Nano 4, 939 (2010). [5] T. Sato et al., Chem. Phys. Lett.
531, 257 (2012). [6] N. Haruta et al., Tetrahedron Lett. 56, 590 (2015). [7] T. Sato et al., J. Phys. Chem. A
112, 758 (2008).
Corresponding Author: T. Sato
Tel: +81-75-383-2803, Fax: +81-75-383-2555
E-mail: tsato@moleng.kyoto-u.ac.jp- 61 - 61 -

1P-19
Metallic/Semiconducting Separation by Electric-Field-Induced Layer
Formation Method Applied to SWCNTs Purified for Removal of Catalysts○Fusako Sasaki1, Fumiyuki Nihey2, Yuki Kuwahara1,3, Takeshi Saito1,3, Hiroyuki Endoh2,
Shinichi Yorozu2
1

Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba 305-8565,
Japan
2
Smart Energy Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
3
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan
We had proposed a method to separate metallic and semiconducting SWCNT solution withnonionic surfactant by Electric-Field-induced Layer formation (ELF) method [1]. In thispresentation, we report the results of ELF separation applied to SWCNTs purified for theremoval of metal catalysts. SWCNTs synthesized by using eDIPS method [2] were purified
by the procedure that consists of low temperature activation, soaking in HCl solution, andvacuum annealing (Fig. 1). The purified SWCNTs were dispersed in aqueous solution ofpolyoxyethylene (100) stearyl ether by sonication and ultracentrifugation. After the treatment,
metallic and semiconducting SWCNTs were separated by ELF method (Fig. 2 (a)). The
optical-absorbance spectra of separated fractions showed the enrichment ofmetallic/semiconducting peaks (Fig. 2 (b)). We found that 500°C-or-higher vacuum annealing
plays an important role to achieve successful separation with this method applied to thepurified SWCNTs[3]. This presentation is based on results obtained from a project subsidized
by the New Energy and Industrial Technology Development Organization (NEDO).
(a)

1.5

Absorbance (arb. unit)

cathode100

Weight (%)(b)

As-grown SWCNTs
51.6%

50

1

cathode(m-SWCNT rich)
anode(sc-SWCNT rich)

0.5

Purified SWCNTs

pristine

3.0%

0
0

200

400
600
Temperature (°C)

800

Fig. 1 Thermogravimetric analysis
results of SWCNTs.

anode

Initial

0

Final

400

800
1200
Wavelength (nm)Fig. 2 (a) Initial and final images of a separation cell. (b)Absorption spectra of the separated SWCNTs.

References:[1] K. Ihara et al., J. Phys. Chem. C 115, 22827 (2011).
[2] T. Saito et al., J. Nanosci. Nanotechnol. 8, 6153 (2008).
[3] F. Sasaki et al., NT15 Abstract, p.99 (2015).
Corresponding Author: F. Sasaki, Tel: +81-29-861-3778
Fax: +81-29-858-6330, E-mail: f_sasaki@tasc-nt.or.jp- 62 - 62 -

1P-20Time evolution study of narrow-chirality distributed single-walledcarbon nanotubes synthesis during pulse plasma CVD○Bin Xu, Toshiaki Kato, and Toshiro Kaneko
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Single-walled carbon nanotubes (SWNTs) are potential materials for future highperformance opto-electric device application. Since the energy state of SWNTs depends onthe chirality, it is important to control the chirality of SWNTs [1-3]. Based on our previous
study, we developed novel plasma CVD named pulse plasma CVD, which can grow SWNTs
with narrow chirality distribution. To improve the purity of chirality species, it is important tounderstand the effects of pulse plasma on the growth of SWNTs. In this study, we haveinvestigated the correlation between pulse on/off time parameters and chirality-distribution of
SWNTs. It is found that SWNTs chirality-distribution is influenced by the balance of pulse
effect and Ostwald ripening effect, which is decided by pulse on/off ratio and total processtime, respectively. The carbon concentration in each catalysts controlled by pulse timeparameters is believed to be the critical factor to explain the pulse effects. Furthermore, weinvestigate the length distribution of SWNTs as a function of pulse times by atomic force
microscope (AFM) measurement (Fig. 1), reveling that SWNTs growth can be continued byrepeating pulse plasma CVD.
Through the fine tuning of growth conditions following this growth mechanism, we havesucceeded in synthesizing SWNTs with very narrow chirality distribution, where only threechirality species ((6,4), (7,3), (6,5)) are dominant.

Fig.1: Length distribution of SWNTs measured by AFM. The pulse time parameters are (a) 10s×3 and (b)10s×15.
[1] Z. Ghorannevis, T. Kato, T. Kaneko, and R. Hatakeyama, J. Am. Chem. Soc. 132, 9570 (2010).
[2] T. Kato and R. Hatakeyama, ACS Nano 4, 7395 (2010).
[3] B. Xu, T. Kato, K. Murakoshi, and T. Kaneko, J. Plasma Fusion Res. 9, 1206075 (2014).
Corresponding Author: B. Xu
Tel: +82-22-795-7046
E-mail: xu12@ecei.tohoku.ac.jp- 63 - 63 -

1P-21
Selective synthesis of single-walled carbon nanotubes using sputtered W/Co
Hua An1, Rong Xiang1, Taiki Inoue1, Shohei Chiashi1, Shigeo Maruyama1,2
1. Department of Mechanical Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo,
Tokyo, 113-8656, Japan
2. National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki,
Tsukuba, 305-8564, Japan
Direct growth of single-walled carbon nanotubes (SWNTs) with a single chirality is highly
desired in the applications. Unfortunately, the as-grown SWNTs are always obtained with amixture of various chiralities, which limits the performance of SWNTs-based nanoelectronics.
Extensive researches have focused on the catalyst structure, growth conditions and initial nucleated
cap to realize the selective growth of SWNTs. W/Co catalyst has been reported to grow a single
chirality SWNT, (12, 6), with over 90% abundance via a high-temperature (1030ºC) reduction
and growth. [1].

Intensity (a.u.)

In this study, we used sputtered W/Co as catalyst to grow SWNTs by alcohol catalytic chemical
vapor deposition (ACCVD) [2]. The catalyst was prepared on the Si/SiO2 substrate and annealed
at a much lower temperature than that of originallyreported tungsten-cobalt clusters [1]. SWNTs withhigh-quality and uniformity were obtained with this
633nm
633 nmbimetallic sputtered W/Co. The narrow (n, m)
distribution was confirmed by Raman spectroscopy
with four different excitation wavelengths. Most of thepeaks centers at 197 cm-1 in Fig. 1, which suggests thehigh quantity of (12, 6). The absorption spectroscopy
also shows the dominant (12, 6) peak. Further* Si
parametric study reveals that the annealing temperature
before growth is critical for the selectivity. More
100
200
300
details will be discussed on the chirality distribution
−1
Raman
shift
(cm
)
and growth mechanism.
Fig.1: Raman spectra of SWNTs with thecorresponding excitation wavelength.

[1] F. Yang et al., Nature 510, 522, (2014).
Corresponding Author: Shigeo Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 64 -- 64 -

1P-22
Preparation and Characterization of Fibrous Aggregates of Single-Walled
Carbon Nanohorns○Ryota Yuge1, Fumiyuki Nihey1, Kiyohiko Toyama1, and Masako Yudasaka2, 3
1

Smart Energy Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
National Institute of Advanced Science and Technology (AIST), Tsukuba, 305-8565, Japan
3
Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan
2

Single-walled carbon nanohorns (SWCNHs) [1] are a type of nano-carbon materials such ascarbon nanotubes and graphenes, which are attractive having the high dispersibility and large
specific surface area. As a result, the gas adsorbents [2], compound materials [3],electrochemical capacitors [4], and carriers of drug delivery systems [5] are expected aspromising applications. The preparation of SWCNHs with good conductivity is the hopefulstrategy to obtain further outstanding performance. In this study, we succeeded in preparing
fibrous aggregate of SWCNHs (Fibrous SWCNHs) for the first time and characterize thestructure and electronic properties.
Fibrous SWCNHs were prepared by CO2 laser ablation of an iron-contained graphite targetat room temperature. The CO2 laser was operated in the continuous-wave mode. The gaspressure in the growth chamber was sustained at 760 Torr by controlling the evacuation rate
while the flow rate of buffer gas of N2 was kept at 10 L/min.
From SEM and TEM observation of the obtained samples, the individual SWCNH was 2-5
nm in diameter and 40-50 nm in length. The SWCNHs have been assembled fibrously with 30-100 nm in diameter and grown in several micro-meters in length, which is different entirely
from general spherical aggregates of SWCNHs. The fibrous SWCNHs were prepared
simultaneously with the spherical SWCNHs. From EDX and XPS measurements, the catalyst
contained in fibrous and spherical SWCNHs after CO2 laser ablation existed mainly as Fe
metal particles. In a four-point-probe resistivity measurements, the electrical resistivity of the
mixture of fibrous and spherical SWCNHs was 0.99 cm, 33% lower than that of spherical
SWCNHs. The details will be shown in the presentation.
[1] S. Iijima et al. Chem. Phys. Lett. 309, 165 (1999).
[2] E. Bekyarova, et al. J. Phys. Chem. B, 107, 4681 (2003).
[3] A. Tanaka, et al. Tribol. Lett. 19, 135 (2005).
[4] C. M. Yang et al. J. Am. Chem. Soc. 129, 20 (2007).
[5] T. Murakami et al. Mol. Pharm. 1, 399 (2004).
Corresponding Author: R. Yuge
Tel: +81-29-850-1566, Fax: +81-29-856-6137,
E-mail: r-yuge@bk.jp.nec.com- 65 - 65 -

1P-23
Electrochemical Exfoliation of Graphite Intercalation Compounds
Encapsulated in Polymer○Yasunaga Tan-no, Haruya Okimoto, Masahito Sano
Department of Polymer Science and Engineering, Yamagata University
Yonezawa, Yamagata 992-8510, Japan
A graphene intercalation compound (GrapheneIC) is a graphite intercalation compound(GIC) consisting of a few layer graphene sheets. Having doped by the intercalants, GrapheneIC
possesses high electric conductivity with optical transparency of graphene. So far, GrapheneICs
have been fabricated by treating a few layer graphene sheets with the intercalants in the vapor
phase. We are interested in developing a technique to exfoliate GIC in the liquid phase. In
particular, electrochemical exfoliation has an advantage of minimizing oxidation by controllingelectrolytes and potentials. This new technique may lead to cost-effective, mass productions ofGrapheheICs.
The most common intercalants that are capable of doping graphene are metal halides.
Although their GICs are relatively stable in air, they are immediately disintegrated in aqueous
phases. Thus, a means to protect metal halides is required to exfoliate GIC in solution. In thisstudy, a polymer is used to offer a protective layer around GrapheneIC during electrochemical
exfoliation.
FeCl3-GIC was made by heating graphite with FeCl3 in vacuum. It was, then, used as an
anode for electrochemical exfoliation in H2SO4 solution with carboxymethyl cellulose (CMC)
as a protective polymer. Figure 1 showsthat, prior to exfoliation, in the acidic
solution without CMC (left), the metal
chloride from FeCl3-GIC was dissociatedinto the solution and a graphite Raman
spectrum is recovered. In contrast, CMC
reacts with the dissociated metal ions toform gel around the GIC (right) and a GIC
Raman spectrum is retained in the acidic
solution.
Afterelectrochemical
was
exfoliation,
FeCl3-GrapheneIC
successfully obtained from the solution
with CMC. An excellent ability to beadsorbed on graphitic compounds as wellas its characteristic to form cross-links
with metal cations allow CMC toinencapsulate
FeCl3-GrapheneIC
Fig.1: The electrochemical solutions (top) and Raman
solution.
spectra (bottom) of FeCl -GIC in the acid solution with3

Corresponding Author: H. Okimoto
Tel: +81-238-26-3074,
E-mail: haruya@yz.yamagata-u.ac.jp(right) and without (left) CMC.

- 66 - 66 -

1P-24Fabrication of clean graphene/BN heterostructuresby metal melting transfer○Ryosuke Inoue1, Kenji Watanabe2, Takashi Taniguchi2,
Yutaka Maniwa1, Yasumitsu Miyata1,3
1Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
National Institute for Materials Science, Tsukuba 305-0044, Japan
3
JST, PRESTO, Kawaguchi, 332-0012, Japan

Chemical vapor deposition (CVD) are widely used for the growth of large-area, uniform
monolayer graphene films. Generally, CVD graphene is grown on metal substrates such as Cu
and Ni foil, and thus graphene films should be transferred from metal substrates to insulating
substrates such as SiO2 and boron nitride (BN) for electronics applications. Conventionaltransfer process uses polymer coating to support graphene films during etching metal
substrates, and then, the polymer is washed by organic solvent [1]. This process, however,includes several unavoidable issues such as remaining polymer and solvent on the graphenesurface and at the graphene/substrate interface. The improvement of transfer process is,therefore, still highly desired to realize intrinsic transport properties of CVD graphene.
In this study, we have developed a clean, direct transfer process (Direct transfer) of CVD
graphene under inert atmosphere at very high temperature over 1100°C. Graphene was grownon Cu foil, and then was fixed on BN substrates. For the transfer, the samples were annealed
at 1150°C to melt Cu foil under Ar/H2 atmosphere. During the Cu melting, the graphene films
can be directly transferred on the BN substrates. The presence of graphene on BN was
confirmed by optical microscope, atomic force microscope (AFM), and Raman spectra (Fig.
1). It is noteworthy that the graphene on BN has highly-clean surface like BN surface andone-atom-thick height profile (Fig.1b,c). Furthermore, 2D band of the graphene shows
relatively narrow full width at half maximum (fwhm) of 19 cm-1 compared to that of graphenetransferred on BN by conventional polymer-assisted process (Fig.1d). In the presentation, we
will report the details of process and properties of the present graphene/BN heterostructures.

Fig.1 (a) Optical microscope, (b) AFM images, and (c) height profile of the graphene on BN. (d) Raman
spectra of graphene on BN obtained by the present direct transfer and conventional polymer transfer
processes.
[1] X. Li, et al., Science 324, 1312 (2009).
Corresponding Author: Yasumitsu Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp- 67 - 67 -

1P-25Graphene Etching Reaction
Analyzed by a Time-Reversed Crystallization Theory○Yu-uto Watanabe, Yu-usuke Ikemura, Masahito Sano
Department of Polymer Science and Engineering, Yamagata University
Yonezawa, Yamagata 992-8510, JapanFor semiconducting and magnetic applications of graphene, it is important to fabricate small
graphene flakes with controlled shapes and edge structures. In this study, a wet-etching reactionof graphene by piranha solution at a mild condition is examined to see if it is suitable for shapeand edge- controls. In particular, it is of our interest to know whether the etching reaction
proceeds along zigzag edges (at perimeters or 1D) or it enlarges pits or holesexisting within agraphene plane (2D). It is also our aim to gain information on if the reaction produces additional
defects during etching.
In order to analyze the kinetic data, we have noted that graphene etching is a removal processof identical carbon hexagons from the honeycomb lattice. When viewed backward in time (i.e.
with time-axis reversed), it is an addition of hexagons to the lattice. This has suggested us thatthe etching kinetics may be analyzed by a time-reversed crystallization theory with “etching”
replaced by “growth” and “initiation” by “nucleation”. In particular, Avrami theory isappropriate to resolve our interests. It is based on a problem of expanding waves produced byrandomly falling raindrops on water. The Kolmogorov-Johnson-Mehl-Avrami (KJMA)
equation describes a fractional space occupied by all expanding waves at time t.
Confocal Raman microscopy was employed to follow the etching kinetics of single-layer
graphene and multi-layer graphene oxide. The KJMA equation in the present case is given by
𝐺𝐺−ln (𝐺𝐺 ) = 𝑘𝑘𝑘𝑘 𝑛𝑛

SL-graphene0

Corresponding Author: M. Sano
Tel: +81-238-26-3072,
E-mail: mass@yz.yamagata-u.ac.jp- 68 - 68 -1
2

-ln(G/G0)

where G is the G-band intensity at t, k is a rate
constant, and n is the Avrami exponent that equals thedimension in heterogeneous (constant number ofnucleus) nucleation and the dimension + 1 inhomogeneous (increasing number of nucleus)
nucleation.
A mild piranha solution was made and reacted at a
low temperature. Figure 1 shows the Avrami plot for
single-layer graphene. The exponents indicate that, atthe early stage of the reaction, etching proceeds alongzigzag edges without creating additional defects. The
study demonstrates that the piranha etching at themild condition can be applied to produce shape- andedge- controlled graphene flakes.

0.1

0.01
10

1

100
Time (s)1000

Fig.1: Log-log plot of the KJMA equation.
The number indicates the slope of a straightsegment.

1P-26

Raman spectroscopy of graphene in magnetic ﬁeld
Toshiya Shirakura1 , Riichiro Saito1
1

Department of Physics, Tohoku University, Sendai 980-8578, Japan

In this work, we calculate the Raman spectra of graphene in magnetic ﬁeld in which the optical phonon
and the inter Landau-level (LL) electronic transitions are coupled together. The physics of graphenein the presence of the magnetic ﬁeld can be studied by the magneto Raman spectroscopy [1,2,3]. The
high quality of graphene samples are reﬂected by the long lifetime of the Dirac fermions and the narrowspectral widths of the LL [4]. For evaluating the in-plane crystal size, the defects, the LL spectral width
can be compared by using Raman spectroscopy in magnetic ﬁeld [4,5].
A previous theoretical work has calculated the Raman spectra of graphene under the magnetic ﬁeld byusing ﬁtting parameter which relating to G-peaks from experiment of Raman spectra in their formula[6]. However, they did not consider the microscopic picture of interference of the peaks. In this work,
we directly calculate the G-band Raman spectra by considering electron-photon and electron-phonon
interaction. In order to get the result, we consider time-dependent perturbation theory, and we adapt
dipole approximation for electron-photon matrix element. Dipole approximation means that wave lengthof laser is suﬃcient long compared with atomic bond length of graphene, and it is important point tosatisfy selection rule of transition probability, that is |n′ | − |n| = ±1(n is the index of LL) [7]. In thecase of electron-phonon interaction, we consider the deformation potential which is given by a sum overatomic screened ion potential, and we use Gaussian ﬁtting parameter in calculation of atomic orbital [8].
We will compare the calculation and experimental result.

[1] M. O. Goerbig, et al ., Phys. Rev. Lett. 103, 087402 (2009).
[2] T. Ando, et al ., J. Phys. Soc. Jpn. 76, 024712 (2007).
[3] C. Faugeras, et al ., Phys. Rev. Lett. 103, 186803 (2009).
[4] J. Yan, et al ., Phys. Rev. Lett. 105, 227401 (2010).
[5] C. Faugeras, et al ., Phys. Rev. Lett. 107, 036807 (2011).
[6] C. Qiu, et al ., Phys. Rev. B. 88, 165407 (2013).
[7] M. Arikawa, et al ., Phys. Rev. B. 78, 205401 (2008).
[8] A. Gruneis, PhD Thesis. (2008).
Corresponding Author: T. Shirakura
E-mail: shirakura@ﬂex.phys.tohoku.ac.jp- 69 - 69 -

1P-27

Photoluminescence properties of thin layer black phosphorene○Takashi Nakamura, Shinichiro Mouri, Yuhei Miyauchi, and Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Kyoto, Japan
Recently, the atomically thin layered two-dimensional (2D) materials have attracted muchinterest from the viewpoints of fundamental physics and applications. The black phosphorus
is also capable of being mechanically exfoliated to single or several atomic layers, which arecalled as “phosphorene”. Although the phosphorene is spotlighted as the new material for 2D
semiconductor [1], the detail electronic and optical properties have not been fully understood.
Thus, we studied single- and multi-layer black phosphorene by using optical spectroscopy,
Raman, photoluminescence (PL), and differential reflectivity to understand their characteristic
optical and electronic properties.
Our previous work shows the linearly polarized differential reflectivity spectra
corresponding to absorption spectrum of black phosphorene with different thickness [2]. The
differential reflectivity spectrum of thick phosphorene shows the peak at 0.37 eV, which isalmost consistent with the previously reported value of bulk phosphorus [3]. In contrast, thedifferential reflectivity spectrum of thinner phosphorene shows a peak at 0.55 eV, which is
assigned as the exciton absorption peak. The energy of absorption peak increases withdecreasing of layer thickness due to quantum confinement effect. However for more thinner
layers (single- and bi-layer), the absorption peaks would exist in far beyond the near-infrared
region, therefore we have studied optical properties in thin-layer phosphorene with different
methods. Figure 1 (a) and (b) show optical and PL image of phosphorene flakes. The PL
spectrum in Fig, 1 (c) shows
the broad features of 1.3, and1.55 eV from bi- andsingle-layer black phosphorene,
where the layer numbers of
black
phosphorene
was
confirmed from the opticalcontrast and Raman spectra[3,4]. In the conference, wewill discuss the detail opticaland electronic structure of thin Fig, 1: Optical and PL image of flakes of phosphorene. PL spectra of
single- and bi-layer phosphorene.
layer black phosphorene basedon the experimental results ofRaman and PL spectroscopy.
[1] Likai Li et al., Nat. Nanotech. 9, 372-377 (2014).
[2] Takashi Nakamura et al., 48th Fullerene-nanotube-graphene conference. 3-5[3] Wanglin Lu et al, Nano Research 7, 853-859 (2014).
[4] Han Liu et al, ACS Nano 8, 4033-4041 (2014).
Corresponding Author: Takashi Nakamura
Tel: +81-774-38-3463,
Fax: +81-774-38-4567,
E-mail: nakamura.takashi.23z@st.kyoto-u.ac.jp- 70 - 70 -

1P-28Magnetic properties of graphene quantum dots embedded in h-BN
○Mina Maruyama and Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan-J = EAP -EF[eV]

Because of structural similarity between graphene and h-BN, they can form in-plane hetero
structures in which h-BN and graphene are connected each other via C-B and N-C hetero
chemical bonds at their borders. Recently, these in-plane hetero sheets of graphene and h-BN
have been synthesized experimentally. In an early theoretical calculation predicted that thesehetero sheets exhibit the magnetic ordering in graphene domain depending on the domain
shapes and the border arrangements. In the caseof the graphene dot with a triangular shape (a)(a)
embedded in h-BN, the dots exhibit spinpolarization induced by the half-filled
non-bonding states at the Fermi level. For thepractical application of the graphene dots in
h-BN for spin devices, it is important toelucidate the fundamental magnetic properties of(b)both within and between the dots. Therefore, inthis work, we aim to investigate that energetics
and spin-spin interaction J between graphene
dots with the triangular shape embedded intoh-BN using density functional theory.
Figure 1 shows isosurfaces of spin densities ofgraphene dots in h-BN with the inter-dots Fig.1: Isosurfaces of spin densities of (a) C/N
spacing of 1nm. Spin densities are localized on C and (b) C/B borders of graphene dots embedded
into h-BN with inter-dots spacing of 1 nm in a
atoms situated at the border between graphene triplet
spin coupling.
dots and h-BN. We find the singlet and triplet
0.005
spin arrangements as their stable spin
configurations. By taking the energy difference0
between the singlet and triplet states, we can-0.005
estimate the spin-spin interaction J between dots.
-0.01
Figure 2 shows the J between two graphene dots.
-0.015The J possesses a minimum value of J = 25 meV-0.02
at the inter-dot spacing of 0.5 nm, indicating that
-0.025the flakes prefer the singlet spin arrangement to-0.03
the triplet spin arrangement. The J rapidly
4
6
8
10
12
14
16
Distance between phenalenyls [A]approaches zero with increasing the inter-dot
spacing. The fact indicates that the spin Fig. 2: The spin-spin interaction J between
interaction J is the short-range interaction of graphene dots as a function of the inter-dots
spacing.
which interaction range is less than 1 nm.
Corresponding Author: M. Maruyama
Tel: +81-29-853-5600 (ext. 8233), Fax: +81-29-853-5924,
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp- 71 - 71 -

1P-29A durable Pt electrocatalyst supported on a polybenzimidazole wrapped 3D
nanoporous carbon shows a high fuel cell performance
Zehui Yang1, Tomohiro Shiraki1, Isamu Moriguchi2 and Naotoshi Nakashima

*1,3

1

2

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
Division of Chemistry and Materials Science, Graduate School of Engineering, Nagasaki
University, 1-14 Bunkyo-Machi, Nagasaki 852-8521, Japan
3
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Polymer electrolyte fuel cells (PEFCs) have the potential to alleviate major problems
associated with the production and consumption of energy, considered as promising, attractive,
reliable and clean energy generation for automotive and stationary applications; thus
considerable attention has been focused on the high-temperature PEFCs (> 100 oC), due totheir benefiting PEFCs with higher carbon monoxide (CO) tolerance, faster electrochemical
kinetics, and better water management than those of conventional PEFCs. However, thehigh-temperature PEFCs also suffer from their low durability in terms of carbon corrosion andplatinum nanoparticles (Pt-NPs) aggregation resulting in the detachment of the Pt-NPs fromthe catalysts and loss in electrochemical surface area (ECSA) as well as the degradation of FC
performance. Thus, enhancement in durability is highly demanded for the commercializationof the next-generation PEFCs.
Nanoporous carbon (NanoPC) has a porous structure with a higher surface area that has ahigh potential to be a supporting carbon of PEFCs. In
this study, we used PyPBI to wrap nanoporous carbon(NanoPC) before Pt-loading as schematically shownin Figure 1 in order to obtain a NanoPC/PyPBI/Pt
electrocatalyst. The electrochemical surface area

PyPBI

CB/PyPBI/Pt
Pt

NanoPC/PyPBI

NanoPC

NanoPC/PyPBI/Pt

Figure 1. Schematic illumination of preparation of
CB/PyPBI/Pt and NanoPC/PyPBI/Pt electrocatalysts.

NanoPC/PyPBI/Pt (342 mW/cm2) was almost 2 times
higher than that of the CB/PyPBI/Pt.

1

Reference

2

300

0.8

250

Performance
Improvement

0.6

200
150

0.4

100

0.2
0

[1] N. Nakashima et al. ACS Appl. Mater. Interfaces, 2015, 7,
9800-9806.
Corresponding Author: N. Nakashima
Tel: 092-802-2840, Fax: 092-802-2840,
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp

350

50
0

0.5
1
1.5
Current Density / A/cm 22

Power Density IR-free/ mW/cm

electrocatalysts.
As shown in Figure 2, the power density of- 72 - 72 -Pt

CB/PyPBICB

Potential IR-free / V(ECSA), durability and high temperature fuel cell
performance of the prepared electrocatalyst have beenmeasured and compared its performance to theconventional
CB/Pt
and
CB/PyPBI/Pt

PyPBI

0

Figure 2. I-V and power density
polarization curves of different MEAs
based on CB/Pt (black line),
CB/PyPBI/Pt
(blue
line)
and
NanoPC/PyPBI/Pt (red line) at 120 oC
under non-humidified atmosphere.

1P-30Synthesis of carbon nanopot with Fe catalyst supported on graphene oxide○Hiroyuki Yokoi1, Kazuto Hatakeyama1, Michio Koinuma1, Takaaki Taniguchi2,
Yasumichi Matsumoto1
1

Graduate School of Science and Technology, Kumamoto University, Kumamoto 860-8555,
Japan
2International Center for Materials Nanoarchitectonics, National Institute for Materials
Science, Tsukuba 305-0044, Japan

Carbon nanopot, a novel material developed recently[1], is a pot-shaped material
composed with multi-layered graphene sheets, and is produced in series to form fibers(nanopot fibers). The typical size of carbon nanopot is 20-40 in diameter and 100-200 nm inlength. Its narrow and deep mesopore is closed on one end, which suggests that this material
could be applied as nano-container.
In the previous syntheses of carbon nanopot, we used iron acetate and cobalt acetate asprecursors of catalyst and mixed them with aqueous dispersion of graphene oxide to mountcatalyst on graphene oxide. However, UV-VIS absorption measurements and XRF and XPS
analyses have revealed recently that cobalt is not mounted on graphene oxide as much as
prepared. In order to investigate the effect of cobalt on the growth of carbon nanopot, we first
conducted the synthesis experiments with using iron acetate as a single precursor of catalyst.
In the synthesis conditions same as the previous growth conditions except for the catalyst, we
obtained carbon nanopot similarly as in the previous synthesis (Figs. 1 and 2). However, theamount of products decreased greatly compared with the previous ones, as one observes inFig. 1 that nanopot fibers were produced sparsely. This result suggests that cobalt can enhance
the formation of carbon nanopot though it may not be essential to that. Control of cobalt
content on graphene oxide could be one of key factors in producing carbon nanopot
effectively.

Fig. 1: SEM image of carbon nanopot fibers produced inthis study.
[1] H. Yokoi et al. submitted.
Corresponding Author: H. Yokoi
Tel: +81-96-342-3727, Fax: +81-96-342-3710,
E-mail: yokoihr@kumamoto-u.ac.jp- 73 - 73 -Fig. 2: Enlarged SEM image of one ofcarbon nanopot fibers in Fig. 1.

1P-31
Bound Exciton Emission in Photoluminescence Spectrum of
Monolayer WSe2
○N. Baizura Mohamed, Feijiu Wang, Shinichiro Mouri, Koirala Sandhaya,Yuhei Miyauchi, and Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, JapanThe atomically thin transition metal dichalcogedes (TMDCs) have been attracted muchinterests from viewpoint of fundamental physics and applications. The optically generated
electron-hole pair forms two-dimensional (2D) exciton in atomically thin TMDCs, such as
MX2 (M=Mo, W, X=Se, S). Recently, the spatially localized exciton in semiconductormaterials have become a hot topic for the quantum scientific field, because single impurities
could be used as the qubits of quantum computation, as well as nonclassical light sources, inquantum information science [1]. In particular, it is expected that the bound exciton towell-defined single impurity (defect) in TMDCs are promising system for these target [2,3].
In this study, we investigated the nature of bound exciton emission in WSe2 byphotoluminescence (PL) spectroscopy from 5 to 300 K. Figure 1(a) shows the optical
microscope image of WSe2 flake with monolayer thickness. We obtained the PL image of the
WSe2 flakes, monitored in the PL intensity of 1.55 eV at low temperature. The strong PL
intensity is observed from monolayer region in the PL image. Moreover, the bright PL spot isobserved in the edge of monolayer WSe2 (figure 1(b)). Figure 1(c) exhibits temperaturedependence of PL spectra at the bright PL spot. The PL spectra at 5 K shows broad peakaround 1.65 eV due to the defects (or vacancies) related emission of WSe2. Very sharp
emissions appear at 1.55 eV in the PL spectra from 5 to 40 K, which depicts the bright spot in
the PL image. This very sharp peak might originate from bound exciton emission towell-defined point defect of WSe2. This type of spatially localized bound exciton behaves as
0D-like exciton in 2D WSe2. We will discuss the natures of 0D-like exciton in monolayer
WSe2 for future development of TMDCs-based quantum optical science and its applications.
References[1] T. Kato et al., ACS Nano, 8, 12777,(2014).
[2] P. Tonndorf et al., Optica, 2, 347, (2014)[3] A. Srivastava et al., Nature
Nanotech,doi:10.1038/nnano.2015.60(2015).
Corresponding Author: Prof. Kazunari
MatsudaTel: +81-774-38-3460
Fax: +81-774-38-3460
E-mail: matsuda@iae.kyoto-u.ac.jp

Figure 1 (a) Optical image of monolayer WSe2, (b) PL intensity
map integrated at 1.55 eV, (c) PL spectra of WSe2 from 5 to 300 K.

- 74 -- 74 -

1P-32In-situ electrochemical Raman Spectroscopic Studies of
MoS2 grown on Au(111)○Ryosuke Takahashi, Ryota Kumagai, Satoshi Yasuda, Kei Murakoshi
Department of Chemistry, Hokkaido University, Sapporo 060-0810, Japan
Molybdenum disulfide (MoS2) has extensively studied in recent years due toits various electronic properties. To maximize their properties, precise understanding of
an influence of carrier doping on phonon properties is required. In this study, single
crystalline monolayer MoS2 was synthesized by PVD process, and in-situ Raman
spectroscopy (532nm, 1mW) was carried out to investigate the potential dependentchange of monolayer MoS2 on Au(111) under electrochemical potential control inaqueous solution.
Fig. 1 shows an optical image of a large area MoS2 grown on Au(111) substrate,
and monolayer MoS2 with rectangular shaped MoS2 patterns could be produced.
Raman measurement found that both E12g and A1g were clearly observed, however, A1g
mode split two peaks. Observed splitting of A1g mode is attributed to be a modulation
effect by interacting with Au(111) surface. Electrochemical potential dependence ofRaman spectra was also found that both phonon modes soften with electron doping (Fig.
2), suggesting weakening of the bonds due to an occupation of the antibonding states in
the conduction band. These results demonstrated detail evaluation of the influence ofcarrier doping on MoS2 phonon properties.
Corresponding Author: S. Yasuda
TEL & FAX: +81-(0)11-706-4811
E-mail: satoshi-yasuda@sci.hokudai.ac.jp

Fig.1 A representative Photograph ofmonolayer MoS2 grown on Au(111).

Fig.2. Electrochemical Raman spectra of monolayer
MoS2 grown on Au(111) 0.5 M Na2SO4 aqueous
solution.

- 75 - 75 -

1P-33First-principles study of the morphology of MoS2 on Al2O3(0001)○Hideyuki Jippo, Kenjiro Hayashi, Shintaro Sato, Mari Ohfuchi
Fujitsu Labs. Ltd., 10-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0197, JapanAn increasing interest has emerged in transition metal dichalcogenides (TMDCs) such as
MoS2 owing to their unique properties. Chemical vapor deposition (CVD) is a promising
method to synthesize large-scale monolayer MoS2, which is
crucial for device applications. Sapphire (α-Al2O3) has been
explored as one of the substrates for such large-scale CVD
growth; however, recently it was reported that triangular MoS2
islands have two preferential orientations on α-Al2O3(0001)
substrates [1], possibly causing grain boundaries. We have also
obtained similar experimental results. In this work, tounderstand this phenomenon, we perform first-principles
calculations of MoS2 on α-Al2O3(0001), using the density
functional theory (DFT) code, OpenMX [2].
Fig. 1: Side view of the mostThe surface condition of α-Al2O3(0001) has not been stable structure (Structure A)
identified in our CVD experiments. For example, DFT of MoS2 on Al-terminatedcalculations have revealed that two orientations of MoS2 on Al2O3(0001). The rectangle
shows the unit cell. The
O-terminated α-Al2O3(0001) produce a small total energy interlayer distance d was
difference (2.2 meV per MoS2) [3]. Although OH terminations determined to be 2.4 Å.
may also exist on the surface, we here investigate MoS2 on
Al-terminated α-Al2O3(0001) surface. This Al-terminatedsurface is observed under UHV conditions and considered to be
the most stable. Figures 1 and 2(a) show the most stablestructure (Structure A) among the examined models. Three
topmost Al atoms per unit cell make bonds with S atoms of
MoS2. After rotation of MoS2 by 60° and geometric optimization,
we obtained the second most stable structure (Structure B)
shown in Fig. 2(b). We have found that “Structure B” is lessstable than “Structure A” only by 0.7 meV per MoS2, which issmaller than that for the O-terminated surface.
Our CVD experiments were performed under S-richconditions, where Mo edges with S terminations are the most Fig. 2: Top views of (a) thestable [4], leading to triangle islands as illustrated in Fig. 2. If most and (b) the second mostthe orientation of the triangles is determined at the early stage of stable structures (Structuresislands with approximately ten MoS2 units, the probability ratio A and B). The atoms of MoS2of two orientations of the triangles is estimated to be 1.1 at our and top two layers of Al2O3
are shown. The rhombus
growth temperature of 800° C. This suggests that it is essentially represents the unit cell. The
difficult to align the orientation of triangular MoS2 islands on gray triangle indicates the
MoS2 island with Mo edges.
α-Al2O3(0001) substrate.
[1] D. Dumcenco et al., ACS Nano 9, 4611 (2015). [2] http://www.openmx-square.org/[3] Q. Ji et al., Nano Lett. 15, 198 (2015). [4] D. Cao et al., J. Phys. Chem. C 119, 4294 (2015).
Corresponding Author: H. Jippo, Tel: +81-46-250-8843, E-mail: jippo.hideyuki@jp.fujitsu.com- 76 - 76 -

1P-34
Preparation of iron oxide nanotubes with spectral sensitivity peak at
red light region and its application to photo-voltaic device○ Yuta Kosugi1, Takuya Tomiyasu1, Shunji Bandow2
Department of Materials Science & Engineering1 and of Applied Chemistry2,
Meijo University, Nagoya 468-8502, Japan
Magnitude of optical band gap for various iron oxides materials are at around 2.2 eV, whichcorresponds to the light wavelength of ~520 nm.

This wavelength is much longer than that of

TiO2 (~3 eV; ~380 nm) which is used for various photo-energy conversion applications.
However the maximum of the radiation intensity of sunlight is around 500 nm and it rapidly drops
in UV region. Regarding the radiation intensity of sunlight, iron oxide is much effective for the
sunlight harvesting when the HOMO and LUMO level matchings are solved. To modify theenergy levels, we conducted several trials such as nano-tubulization, thermal treatment and zinc
doping.
Fig. 1 indicates a dependence of thermal
treatment on the optical band gap (top abscissa)
evaluated by a Tauc plot method, together withthat on zinc doping (bottom abscissa). One cansee clearly that the thermal treatment and zinc
doping decrease the band gap. Former one isassociated with the lattice relaxation effect andlatter one with widening the LUMO level.
Obtained nanotubes were spin coated onto
FTO glass from an aqueous suspension of
Fe-ox-NT (or ZnFe-ox-NT) powder which wasFig. 1. Thermal treatment and Zn/Fe atomic ratio
dependence of the optical bad gap.

grounded by adding a small amount ofacetylacetone. Film thickness was controlled
by the quantity of droplets. Then the spectral
sensitivity was measured in the electrolyte of
LiClO4/LiI/I2/acetonitrile by irradiating the
band-pass filtered light of 390, 420, 480, 510,
540, 600, 660 and 710 nm.
resultsofspectralFig. 2 is thesensitivity.

ThickerFe-ox-NTs has much better characteristic thanthat of thin one, and the zinc doping wasinvalid for improving the spectral feature.

Fig. 2. Thickness dependence of spectral sensitivity
for Fe-ox-NTs and ZnFe-ox-NTs.

Corresponding Author: S. Bandow
E-mail: bandow@meijo-u.ac.jp, Tel: +81-52-838-2404- 77 - 77 -

1P-35Fabrication and Brightness Evaluation of
Nano-Carbon Field Emission Electron Source
Hitoshi Nakahara, Shinichi Ito, Yahachi Saito
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
We have studied nano carbon field emitters fabricated by field emission induced
growth (FEIG) for high brightness electron source of electron microscopy. It has been
already reported [1] that the FEIG nano emitters were easy for gun alignment andobtained better SEM images than carbon nanotube (CNT) emitters. However, its
detailed structure and brightness has not been obtained so far. Thus in this study, weobserved transmission electron microscopy (TEM) images of the grown emitter. In
addition, evaluation of brightness was carried out by means of computer simulations ofelectric fields and electron trajectories.
Fig. 1 is a TEM image of a FEIG fabricated emitter. As shown in the figure,amorphous layer and graphitic layer (which has 0.35 nm of lattice spacing) were formed
on a tungsten needle. In addition, capsule like particles (which has about 1 nm ofdiameter) formed a nano protrusion as a nano emitter. These capsules were considered
to be carbon nano capsules transformed from the graphitic carbon by Joule heat causedby field emission electric current at an emission site.
Fig. 2 shows calculated brightness for growing emitter as a function of growing
radius of nano emitter (r). The radius of base tungsten needle (R) used in the calculation
was 50.7 nm. Both radii were estimated from I-V measurements during FEIG
experiment. As shown the figure, it has been confirmed that the brightness of FEIG
emitter was about 10 times higher than that of conventional single crystalline tungsten
field emission electron source.
[1] H. Nakahara, S. Ito, S. Ichikawa and Y. Saito: e-J. Surf. Sci. Nanotech. 12 (2014) 192.

- 78 - 78 -

2P-1
Preparation of [C60]Fullerene Nanowhiskers-Gold Nanoparticles
Composites and Their Catalytic Activity for Reduction of 4-Nitrophenol○Jeong Won Ko1, Jiulong Li1, Weon Bae Ko1,2*
1Department ofConvergence Science, Graduate School, Sahmyook University, Seoul
139-742, South Korea
2
Department of Chemistry, Sahmyook University, Seoul 139-742, South Korea

Gold nanoparticles solution which was synthesized by adding trisodium citrate
dihydrate(C6H5Na3O7ㆍ2H2O), sodium borohydride(NaBH4), cetyltrimethyl ammonium
bromide((C16H33)N(CH3)3Br ), ascorbic acid and potassium gold(Ⅲ) chloride(KAuCl4) into
distilled water and then, the resulting solution was stirred for 15 min. [C60]Fullerene
nanowhiskers-gold nanoparticles composites were synthesized using C60-saturated toluene,
gold nanoparticles solution and isopropyl alcohol by liquid-liquid interfacial
precipitation(LLIP) method. The product of [C60]fullerene nanowhiskers-gold nanoparticles
composites was characterized by X-ray diffraction, Raman spectroscopy, scanning electron
microscopy and transmission electron microscopy. Catalytic activity of [C60]fullerene
nanowhiskers-gold nanoparticles composites as a catalyst was confirmed in the reduction of
4-nitrophenol by UV-vis spectroscopy.

Fig.1 Kinetics for reduction of 4-nitrophenol by first-order reaction equation with the [C60]fullerene
nanowhiskers-gold nanoparticles composites[1] S. K. Hong, J. H. Lee, J. M. Kim and W. B. Ko, J. Nanosci. Nanotechnol., 11, 734 (2011).
[2] K. Miyazawa, J. Nanosci. Nanotechnol., 9, 41(2009).
* Corresponding Author: Weon Bae Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318
E-mail: kowb@syu.ac.kr- 79 - 79 -

2P-2
Development of O-acetylated sugar substituted fullerenes forsolution-processed organic field-effect transistors and photovoltaics○Yu Uemura1,2,3, Akifumi Yagami1, Masayoshi Yoshitake1, Yuta Murakami1, Yoshihiko
Nishihara3, Masayuki Chikamatsu3, Keiji Mizuki1,2, Taizo Hatta1,2
12Department of Nanoscience, Sojo University, Kumamoto 860-0082, Japan
Kumamoto Institute for Photo-Electro Organics (PHOENICS), Kumamoto 862-0901, Japan
3
Research Center for Photovoltaics (RCPV), National Institute of Advanced Industrial
Science and Technology (AIST), Ibaraki 305-8565, Japan

Soluble fullerene derivatives have been highly required to realize solution-processedorganic field-effect transistors (OFETs) and organic photovoltaics (OPVs) with low-cost,large-area, light-weight and flexibility.
In this study, highly organic solvent-soluble fulleropyrrolidines having O-acetylated
glucoside or galactoside units in the phenyl group (1a-1c, 2a-2c) were developed. In addition,
their fluorinated ones (3, 4) and N-phenyl isomer (5) were also synthesized. These derivatives
and a reference material (PCBM) were applied to the solution-processed OFETs and OPVs,
and the influence of the chemical structures on the characteristics of the OFETs and the OPVs
was investigated.
Moreover, diastereoresolution of 2c was succeeded by using a chiral column
chromatography. The resolved diastereomers (2c-fwd, 2c-bwd) were applied to OFETs andOPVs, and their performances were compared to those of the diastereo-mixture (2c).

Figure 1. Molecular structures of fulleropyrrolidine derivatives having O-acetylated
glucoside or galactoside units (1a-1c, 2a-2c, 3, 4, 5) and PCBM.
Corresponding Author: T. Hatta
Tel: +81-96-326-3745, Fax: +81-96-326-3000,
E-mail: hatta@nano.sojo-u.ac.jp- 80 - 80 -

2P-3

Curvature Effect on Wettability of Carbon Nanotubes○Konan Imadate1, Kaori Hirahara1, 2
1

2

Department of Mechanical Engineering, Osaka University, Osaka, 565-0871, Japan
Center for Atomic and Molecular Technologies, Osaka University, Osaka, 565-0871, JapanF/πd (=γcosθ) [N/m]

It is well known that nanometer-scale morphology of the solid surface often affects to thewetting characteristics [1]. It is interesting question how a single carbon nanotube (CNT) gets
wet by liquid, since its surface consists of highly-curved graphene due to cylindrical feature
with nanometer scale diameter. CNTs usually show hydrophobic nature, but Homma et al. havereported the existence of water layer surrounding the CNTs surfaces in humid atmosphere [2].
In this study, we examined the correlation between wettability and curvature of individual
CNTs experimentally. Evaluation of single-CNT level wettability was carried out by means offorce measurement using isolated CNTs with various diameters from 1.4 to 22nm based on
Wilhelmy’s balance method. In this method, force applied to a cylindrical solid material due towetting usually measured, and contact angle is evaluated with Wilhelmy’s balance equation
F=πdγcosθ, where F, d, γ and θ are the force due to wetting, diameter of cylinder, surface tension,and contact angle, respectively. Note that γ
Force due to wetting Fand θ are assumed to be constant on
Force measurement
macroscale measurement.
by AFM
cantilever
Figure 1 shows a schematic of force
displacement
CNT
measurement performed in this study. A
Contact themeniscus
liquid surface to
CNT attached to a cantilever tip was
the tip of CNT
Contact
contacted to the liquid surface and theangle
liquidforce due to wetting was measured byusing atomic force microscope (AFM).
Fig. 1. Schematic image of force measurement in AFM.
Diameter dependence of the measured
values of force obtained with ionic liquid
0.020
as the liquid specimen is shown in Fig. 2,
where the force is normalized by
0.015
circumference of individual CNTs (F/πd).
The value of F/πd is equal to γcosθ and
0.010
therefore should be constant on
0.005
macroscale, but we can see that themeasured value for CNTs with diameter
0.000
less than 5nm were significantly deviated.
0
5
10
15
20
25
This finding indicates the curvature affects
Diameter
of
CNT
[nm]
the wettability of CNTs. Details will be
Fig. 2. Diameter dependence of F/πd
discussed on poster.
[1] S. Imabayashi, Review of Polargraphy, 54, 115, 2008 (in Japanese)[2] Y. Homma et al., Phys. Rev. Lett., 110, 157402, 2013
Corresponding Authors: Konan Imadate, Kaori Hirahara
Tel: +81-06-6879-7815, Fax: +81-06-6879-7815,
E-mail: imadate@ne.mech.eng.osaka-u.ac.jp, hirahara@mech.eng.osaka-u.ac.jp- 81 - 81 -

2P-4
Activity and Durability Evaluation of Non-Precious Metal Electrocatalyst
for Oxygen Reduction Reaction in Fuel Cell
○Yosuke Uchibori1, Atom Furuya1, Satoshi Yasuda1,2, Kei Murakoshi1
1Department of Chemistry, Faculty of science, Hokkaido University,
Sapporo, 060-0810, Japan
2
JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan

Non-precious metal-nitrogen-carbon (M-N-C) catalysts has been attracted much attention
as alternatives to costly and limited reserves Pt-based catalysts for oxygen reduction reaction(ORR) on cathodes of polymer electrolyte membrane fuel cells (PEMFC). Among the various
Pt replaced candidates, Fe coordinated to nitrogen functionalized graphitic carbon (Fe-N-C)
catalyst produced by pyrolysis of composites with nitrogen, Fe and carbon precursors, havebeen attracted much attention due to their ORR activities in acid solution. Even thoughvarious approaches have been performed to enhance ORR activity, the resultant catalysts still
suffers from limited activity presumably due to low immobilization of the catalytic sites. In
this study, we developed facile but abundant active Fe-N-C immobilized on CNT catalyst by
pyrolyzing iron phthalocyanine (FePc) molecules adsorbed on vertically aligned carbon
nanotube (VA-CNT). VA-CNTs have a feature of high specific surface area (~ 1000 cm2/g) incontrast to conventional CNT represented by HiPco nanotube (~ 600 cm2/g).
Simply mixing VA-CNTs and FePc were produced FePc wrapped CNT composites due tostrong affinity by  –  interaction, and the pyrolysis (~900 oC under Ar atmosphere)
efficiently translated the adsorbed FePc molecules into Fe-N-C active structure on VA-CNTs(Fig. 1). Ring rotating disk electrode (RRDE) voltammetry in oxygen saturated 0.5 M H2SO4
solution was performed to evaluate ORR activities (Fig. 2). The catalyst exhibited high ORR
activity of an onset and half-wave potentials of 0.97 and 0.79 V versus the reversiblehydrogen electrode, high selectivity of 3.94 ~ 3.98 electron transferred number and highelectrochemical durability of 17 mV negative shift of E1/2 for 10,000 cycles, respectively, inoxygen-saturated 0.5 M H2SO4 solution. The catalyst demonstrated one of the highest ORR
performance in previously reported any nanotube based catalysts in acid medium. Suchexcellent ORR performance was attributed to its high surface area and efficient mass transport
by its mesoporous nature.

Current density / mA cm-2

Corresponding Author: K. Murakoshi
TEL: +81-(0)11-706-2704 , FAX: +81-(0)11-706-4810
E-mail: kei@sci.hokudai.ac.jp
0Fe-N-C/CNT

-1

-2
-3

-4
-5

1600 rpm
10 mV / s

Pt/C

-6
0.2

0.4

0.6

0.8

Potential / V vs. RHE

Fig. 1 Schematic illustration of fabricationof the Fe-N-C/VA-CNT.

Fig. 2 RRDE polarization curves (left) and durability of
Fe-N-C/VA-CNT in an O2-saturated 0.5 M H2SO4
solution (right).

- 82 - 82 -

2P-5
Laccase bioelectrocatalytic high potential oxygen reduction atsteroid-type biosurfactant-modified carbon nanotube interface○Aiko Sasaki1, Makoto Togami1, Masato Tominaga*1,2
1

Graduate School of Science and Technology, Kumamoto University,
Kumamoto 860-8555, Japan
2
Kumamoto Institute for Photo-Electro Organics (Phoenics), Kumamoto 862-0901, Japan
Many redox enzymes operate very close to the thermodynamic potential of theirsubstrate/product couple. Multicopper oxidases, especially laccase (Lac) and bilirubin oxidase,
have been widely studied as fuel cell catalysts for oxygen reduction in enzymatic biocathodes,
where oxygen is fully reduced to water without releasing H2O2 as an intermediate [1-3]. The
multicopper oxidases have four copper atoms in their active sites, which are classified as
type-1 (T1), type-2 (T2), and type-3 (T3) Cu sites. The mechanism of the function ofmulticopper oxidase includes three major steps: reduction of the T1 Cu site by electrontransfer from a reduced substrate, intramolecular electron transfer between the T1 Cu site andT3 Cu site over a distance of ca. 1.3 nm, and reduction of O2 to two H2O molecules at theT2/3 Cu site.
The performance of multicopper enzymes inelectrochemical
oxygenreductioncomparesfavorably with that of Pt. The turnover frequency,
which is the maximum rate at which the catalyst can
reduce oxygen, can exceed >103 s−1 for Lac andbilirubin oxidase, while the equivalent turnover
frequency of Pt is limited to approximately 15 s−1 per
Pt atom. However, the reported values of theheterogeneous electron transfer rate with electrodes
are still far from the expected value (>103 s−1),although the electrode surface function has beendeveloped. We present the interface of single-walledcarbon nanotubes (SWCNTs) modified with asteroid-type biosurfactant that give very fast
heterogeneous electron transfer rates (3000 s−1)
between the T1 Cu site of Lac and the SWCNTs. The
onset potential for starting the reduction reaction of
O2 was very close to the equilibrium redox potential Fig. 1 Cyclic voltammograms of theof the oxygen/water couple. The electron transfer bioelectrocatalytic current of O2 reduction
reaction behaviors were very sensitive to the from the direct electron transfer reaction of
Lac immobilized on a) SC-, b) SD-, c) STside-chain of the steroid biosurfactant.
[1] M. Tominaga et al. Anal. Chem., 87, 5417 (2015).
[2] M. Tominaga et al. Anal. Chem., 86, 5053 (2014).
[3] M. Tominaga et al. Electrochem. Commun, 59, 32 (2015).
*Corresponding Author: M. Tominaga
Tel: +81-96-342-3655, F+81-96-342-3655,
E-mail: masato@gpo.kumamoto-u.ac.jp- 83 - 83 -and d) STdx-SWCNTs, and e) unmodified
SWCNTs in the presence of O2 (solid line)
and Ar gas (broken line). The potential
sweep rate was 10 mV s−1 and the electrodesurface area was 0.25 cm−1. SC: sodium
cholate; SD: sodium deoxycholate; ST:
sodium taurocholate; STdx: sodium
taurodeoxycholate.

2P-6
Application of diameter-tunable single-walled carbon nanotubes to
CNT-silicon solar cells○Yang Qian1, Kehang Cui1, Rong Xiang1, Shohei Chiashi1, Shigeo Maruyama1, 2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba,
305-8564, Japan

Single-walled carbon nanotubes (SWNTs) have been a promising material for solar cellapplications due to its wide range absorption spectrum, high electrical conductivity andtransparency, as well as chemical stability. CNT-Si solar cell has shown a power conversion
efficiency beyond 10% [1]. Despite the two crucial properties of SWNT film, conductivity
and transmittance, the other effects of starting SWNTs, e.g. diameter, on CNT-silicon solar
cells has not been investigated sufficiently.
Recently, our laboratory has successfully synthesized SWNTs on the flat substrate withdiameter tunable from 2.5 to sub-nm, through alcohol catalytic chemical vapor deposition(ACCVD) [2,3]. With the decreasing diameter of SWNTs, the band gap of SWNTs could
become larger and exceeding 1 eV with regard to sub-nm diameter. As a result, SWNTs withaverage diameter smaller than 1 nm are expected to have promising applications inphotoelectronic devices. In our investigation, we will discuss the results of CNT-silicon solar
cells utilizing different average diameters of SWNTs. These SWNT films are synthesized by
Co-Cu and Co-Mo catalysts that have obvious differences in the resulting average diameters.
Regarding CNT-silicon solar cells, the fabrication process is a systematic process whichcontains photolithography and sputtering that are capable of large scale applications. Ourinvestigation could shed some light into the mechanism of CNT-silicon solar cells.

Fig.1: Schematic of CNT-silicon solar cell.

[1] K. Cui et al. J. Mater. Chem. A. 2, 11311 (2014).
[2] S. Maruyama et al. Chem. Phys. Lett. 360, 229(2002).
Fig.2: Raman Spectrum of SWNTs that[3] K. Cui et al. In preparation.
possess different diameters.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983, E-mail: maruyama@photon.t.u-tokyo.ac.jp- 84 - 84 -

2P-7
Carbon Nanotube Thin-Film Transistor for Flexible Biosensor Applications○Nguyen Xuan Viet1, Shigeru Kishimoto2, and Yutaka Ohno1,3
1

Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya
464-8603, Japan2
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
3
EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan

Carbon nanotubes (CNTs) are promising materials for biosensors due to the ultra-highmobility, giving high transconductance and sensitivity [1]. From the point of view of practicaluse, FETs based on a random network CNT thin film is advantageous, compared to FETs
based on individual CNTs. In our previous work, CNT thin-film transistors (TFTs) with ahigh-mobility more than 1,000 cm2/V.s have been realized on a flexible plastic film [2]. In
this study, we demonstrate sensor behavior of CNT TFTs.
CNT were grown by the floating-catalyst CVD,
collected on membrane filter, and then transferred on apolyethylene naphthalate (PEN) substrate. This method
has advantages over conventional solution process, i.e.,
the CNT film is composed of long and clean CNTs witha controllable density [3]. The device was fabricated byconventional photolithography process covered by
PMMA, except for CNT channel.
To examine the sensitivity of the CNT TFT sensors to
the change of pH of medium, we conducted a series ofpH detection experiments. The different pH solutions
were put in the PDMS pool formed on the substrate by
Fig. 1 Response of CNT TFT to 1 mM
using a pipette. Figure 1 shows the response of a CNT
PBS with 10 mM NaCl solutions of
TFT to buffer solutions of various pH ranging from 4 tovarious pH from 4 to 10. (Inset) ID-VGS
characteristics of CNT TFT measured
10. The drain current (hole current) increased and theinsolution of pH from 4 to 10.
positive shift of threshold voltage (inset of fig 1) with
the increase in pH, however transconductance was kept
unchanged. This behavior can be explained by the presence of surface charges on the CNT
surface. The surface charge density can be modified by changing of electrolyte pH. De-proton
process (pH increase) makes the surface more negatively charged, resulting in a positive shiftof threshold voltage as experimentally observed. In addition, we have also demonstrated thedetection of dopamine (DA), an important neurotransmitter in the central brain, with a highsensitivity.
[1] B.L. Allen, et al., Advanced Materials, 19 (2007) 1439-1451.
[2] D.-M. Sun, et al., Nature communications, 4 (2013).
[3] A. Kaskela, et al., Nano letters, 10 (2010) 4349-4355.
Corresponding Author: Y. Ohno
Tel: +81-52-789-5387, Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp- 85 - 85 -

2P-8

Temperature dependence on the synthesis of Pt nanoclusters on
polybenzoimidazole-wrapped carbon nanotubes for use in oxygen reduction
reaction catalyst○Yuki Hamasaki1,2, Tsuyohiko Fujigaya1,2, Naotoshi Nakashima1,2
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Oxygen reduction reaction (ORR) has been realised existing in polymer electrolyte
membrene fuel cells (PEMFCs). Currently, most popularly used catalysts for ORR are
platinum (Pt)-based catalysts. However, Pt is a very expensive metal, hinders wide use ofsuch catalyst in the global commercialization.
In this study, we fabricated sub-nanosized Pt nanoclusters on polybenzoimidazole(PBI)-wrapped multi-walled carbon nanotubes (MWNT) based on i) a coordination step andii) a reduction step (Figure 1). The MWNTs and PBI work as the carbon support and the Pt
coordination site, respectively. [1,2] The use of a polyelectrolyte (here PBI) as an anchoring
unit for the metal is advantageous in view of the practical applications in the PEFCs.

Figure 1 Synthesis routs of Pt nanoclusters on MWNT/PBI.

MWNT/PBI composites were added into a deionized water,then dispersed by sonication. H2PtCl6 as a precursor wasadded into the solution. After stirring over night at room
temperature, the composites were filtered by a PTFE, whichwere reduced by H2 gas at giving temperatures (200, 300 and
400 °C). The obtained materials were characterized bytransmission electron microscope (TEM), thermogravimetricanalyses (TGA) and X-ray photoelectron spectroscopy (XPS).
ORR activity was measured in 0.1 M HClO4 saturated withoxygen.
TEM images of the catalysts revealed that mean diametersof the Pt synthesized at 200, 300 and 400 °Cwere 1.0±0.5,
1.6±0.4 and 4.6±2.4 nm, respectively, indicating that the sizeof Pt nanoclusters can be regulated simply by changing thereaction temperature.
[1] N. Nakashima et al. Small 5, 735 (2009).
[2] N. Nakashima et al. Sci. Rep. 4, 6295 (2014).
Figure 2 TEM images and theirsize distributions of Pt nanoclusterson
MWNT/PBI
synthesized at 200 (a), 300 (b)and 400 °C (c).

Corresponding Author: Naotoshi Nakashima
Tel&Fax: +81-92-802-2840
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 86 - 86 -

2P-9
Sub-millimeter-tall vertically-aligned CNT arrays directly grown on Al foils
Yu Yoshihara,1 Kei Hasegawa,1 Suguru Noda1,*
1

Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan

Vertically-aligned carbon nanotubes (VA-CNTs) have attracted great interests due to theirrich opportunities for applications, however, direct growth on device substrates is important tofully utilize such a unique structure. Most studies have been made on silicon substrates withsurface insulator, but growth on inexpensive Cu or Al foils is highly demanded such forbatteries/capacitors and thermal interface materials (TIMs). Several groups have succeeded in
growing VA-CNTs on Cu foils due to the relatively high melting point of Cu (1085 C), oftenwith a help of insulating Al2O3 underlayer to suppress the catalyst deactivation due to alloying
with the foils. Recently, we realized tens-micrometer-tall, 0.2−0.3 g cm−3-dense VA-CNTs on
Cu foils at 700 C with conductive TiN/Ta underlayer and Fe catalyst, which showed TIMperformance closed to an indium sheet [1]. In this work, we targeted at the growth of submillimeter-tall VA-CNTs on Al foils that have a melting point as low as 660 C.
Tall VA-CNTs are normally synthesized at a temperature around 750 C [2]. At lower
temperatures, suppressed carbon feed and oxidative additives are the key for tall VA-CNTs so
as not to kill the catalyst by carbonization [3]. Fe with a gradient thickness profile was preparedon an Al foil by sputtering with a physical filter [4]. Then the Al foil with Fe catalyst was set ina tubular quartz glass reactor (34 mm in inner diameter and 300 mm in heating zone length),heated to 600 C under a 10 vol% H2/Ar flow at 500 sccm, and CNTs were grown at 600 Cunder a 0.06 vol%C2H2/1.8 vol% CO2/Ar flow at 500 sccm.
CNTs grew taller with the addition of CO2 and the optimum CO2/C2H2 ratio (v/v) was 30.
CNTs stopped growing within 20−40 min with a maximum height of ~80 μm without theaddition of CO2 while stopped growing within 20 min with a maximum height of ~50 μm withthe excess addition of CO2. At the optimum CO2/C2H2 ratio, CNTs kept growing for 4 h to reach~650 µm in height (Figs. 2,3).
CNT height / m

40

700
600

CNT height / m

CVD 20 min
CO2/C2H2 (v/v)
0
10
30
100

60

500
400
300

20

200

CVD 4 hCO2/C2H2 = 30 (v/v)

100

0
0.5

1

2

3

4 5 67

Nominal Fe thickness / nm

0
0.5

1

2

3

4 5 67

Nominal Fe thickness / nm

Fig. 1 Height of CNT arrays grown Fig. 2 Height of CNT arrays grownwith and without addition of CO2
on an Al foil at 600 C for 4 h.
[1] N. Na, et al., Jpn. J. Appl. Phys., in press.
[2] K. Hata, et al., Science 306, 1362 (2004).
[3] K. Hasegawa and S. Noda, Carbon 49, 4497 (2011).
[4] S. Noda, et al., Carbon 44, 1414 (2006).
Corresponding Author: S. Noda
Tel: +81-3-5286-2769, Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 87 - 87 -Fig. 3 SEM image of CNT grownon an Al foil at 600 ℃ for 4 h.

2P-10
Bulk separation of (6,5) single-wall carbon nanotube enantiomers○Takeshi Tanaka, Takuya Hirakawa, Xiaojun Wei, Yohei Yomogida, Atsushi Hirano,
Shunjiro Fujii, and Hiromichi Kataura
Nanosystem Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8562, Japan"&!    

Single-wall carbon nanotubes (SWCNTs)
are produced as a mixture of various structures,and the inhomogeneity hinders their basic
research and applications. We have reported(n,m) and enantiomer separation of SWCNTs
by overloading or temperature-control gel
column chromatography [1]. Recently wehave developed another separation method for(n,m) enantiomers of SWCNTs at very highpurities using a mixed surfactant system [2].
In this presentation, we show large-scale (6,5)
enantiomer separation of SWCNTs using thesystem. CoMoCAT SWCNTs (SG65)
dispersion in sodium dodecyl sulfate (SDS)
and sodium cholate (SC) was prepared bysonication and ultracentrifugation and wasseparated by using a chromatography systemequipped with 430 ml column. Adsorbed
SWCNTs to the column were eluted by
stepwise increasing concentration of sodium
deoxycholate in SDS/SC. Fig. 1a shows
circular dichroism spectra of separated (6,5)
SWCNT enantiomers. After a few separation
cycles, we could obtain milligrams of (6,5)
enantiomers of SWCNTs. Bucky papers of(6,5) enantiomers were prepared from theseparated solutions (Fig. 1b).
This work was supported by KAKENHI
No. 25220602

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Fig. 1. (a) Circular dichroism spectra ofseparated (6,5) SWCNT enantiomers. (b) Bucky
papers of (6,5) SWCNT enantiomers.

[1] H. Liu et al.: Nature Commun., 14, 309 (2011), Nano Lett., 13, 1996 (2013), Nano Lett., 14, 6237 (2014).
[2] X. Wei et al., The 48th FNTG general symposium, 1P-14 (2015) Tokyo, Japan.
Corresponding Author: T. Tanaka
Tel: +81-29-861-2903, Fax: +81-29-861-2786
E-mail: tanaka-t@aist.go.jp- 88 - 88 -*!!    

2P-11Synthesis and characterization of SWNTs from
activated nanotube edges○Hiroki Takezaki1, Keigo Otsuka1, Taiki Inoue1,
Shohei Chiashi1 and Shigeo Maruyama1, 2

1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy NanoEngineering Lab. National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki. 305-8564, JapanTo realize the application of single-walled carbon nanotubes (SWNTs), it is required toestablish the method of chirality-controlled synthesis of SWNTs. Recently, the concept ofcloning [1,2], in which SWNTs are grown using SWNTs as templates without using metal
catalysts, was reported. In this study, we grew SWNTs using open-end SWNTs as templates
to obtain the knowledge of the growth mechanism as well as to increase the growth yield.
We grew horizontally aligned SWNTs on quartz substrates using patterned metal catalyst.
Then the grown SWNTs were partially etched by photolithography and oxygen plasma
treatment to prepare open-end SWNTs. Figure 1 (a) shows the scanning electron microscopy(SEM) image of partially etched SWNTs. We annealed the partially etched SWNTs in air andin water vapor to activate the edges of the open-end SWNTs, and then grew SWNTs via
ethanol chemical vapor deposition (CVD). Figure 1 (b) shows the image of the SWNTs,
which were annealed in water vapor at 900 C and were heated in ethanol vapor at 900 C.
SWNTs grown from activate nanotube edges was observed. We found that the yield of
SWNTs grown from the open-end SWNTs was varied by changing the condition of water
vapor treatment. Raman mapping images showed the chirality of the grown SWNTs was thesame as that of the corresponding template SWNTs. Figure 2 shows RBM distribution of (a)template SWNTs and (b) grown SWNTs, indicating that the average SWNT diameter ofgrown parts was a little smaller than that of template SWNTs. This reveals that cloning
growth of smaller-diameter SWNTs occurs more preferably in this condition.
[1] J. Liu et al. Nat. Comm. 3, 1199 (2012).
[2] Y. Yao et al. Nano Lett. 9, 1673 (2009).
Corresponding Author: Shigeo Maruyama
TEL: +81-3-5841-6421, FAX: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp(a)λex = 532 nm

10

Ratio (%)

(a)

20

(b)

0
20 (b)
10

10 μm

10 μm

Fig. 1 SEM images of (a) partially etched SWNTs and (b) SWNTs
after the growth process.

- 89 - 89 -

0
100

150
200−1 250
RBM(cm )Fig. 2 RBM distribution of (a) template
SWNTs and (b) grown SWNTs.

2P-12Control of diameter and chirality of single-walled carbon nanotubes
due to magnetic field○Yasumasa Takashima, Atom Hamasaki, Jin Uchimura, Ayumi Sakaguchi, Sumio Ozeki
Department of Chemistry, Faculty of Science, Shinshu University
Matsumoto, Nagano 390-8621, Japan
Single-walled carbon nanotube (SWCNT) has a cylindrical structure comprised ofrolled graphene monolayer and its conjugate system brings about various novel properties.
Since the electrical properties of SWCNT as a metal or semiconductor depends strongly on its
structure, the chirality should be controlled for applications.
Graphitic layers having large magnetic anisotropy may be controlled by magnetic fields
to lead to new structures and functions. We constructed an electric furnace system available
in a superconducting magnet and found structural changes of various carbon materials such asactivated carbon, multi-walled CNT, and SWCNT prepared under magnetic fields [1-2].

In

this study, the magnetic fields of up to 10 T was applied to SWCNT growth processes in two
kinds of synthetic methods of chemical vapor deposition (CVD) and liquid decomposition(LD).

We investigated magnetic field effects on structures of SWCNT and their mechanism.
Fig. 1 shows Raman spectra of SWCNT preparedwith the LD method under magnetic fields of up to 6 T.

Diameter, d / nm
2.6

1.6

1.2

0.9

0.8

0.7

150

200

250

300
-1

350

used as a carbon source.

SWCNT grew on carbon

paper during electric heat at 1053 K.

Peak intensity

around 230-250 cm-1 increased with increasing magnetic
field, which indicated that metallic SWCNT of small

Intensity, I / a.u.

Methanol dissolving Cobalt (II) acetate tetrahydrate wasdiameter grew more preferentially than semiconducting
one.

SWCNT prepared by the CVD method [2]100

showed similar tendency to the LD method. Therefore,

Raman shift,  / cm

no magnetic field effect on SWCNT structures

Fig.1: Raman spectra of SWCNT prepareddepended on the preparation methods.

under various magnetic fields, excited with
532 nm laser. 0 T (solid) ; 1 T (dashed) ; 4 T

Reference(dashed and dotted) ; 6 T (dotted)[1] A. Sakaguchi, et. al., Chem. Lett., 2012, 41, 1576.
[2] A. Sakaguchi, et. al., Chem. Lett., 2013, 42, 304.
Corresponding Author: Atom Hamasaki
Tel: +81-263-37-2467, Fax: +81-263-37-2559, E-mail: atom@shinshu-u.ac.jp- 90 - 90 -

2P-13
Solubilization of Single-Walled Carbon Nanotubes Using Riboflavin andAnalysis of Temperature Dependent Solubilization Behavior
Wataru Ishimaru1, Fumiyuki Toshimitsu1, Naotoshi Nakashima1,2
1 Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) are carbon cylinders as rolled up graphene. Dueto their remarkable properties, such as mechanical strength and electron mobility, they are
expected as nanomaterials for the next generation devices like solar cell and nano wiring
materials. For application of SWNTs, solubilization of the materials is needed and many
reports about this including its mechanism have been published. However, further
understanding on the solubilization mechanism is still important.
In this study, we report i) the finding that riboflavin (Fig.1) can solubilize SWNTs and ii)
analysis of temperature dependence on thissolubilization behavior. Flavin derivatives have beenreported to form specific adsorption structures [1, 2].
SWNTs and riboflavin in water were sonicated, thencentrifugated to obtain a supernatant, which wascollected and used for measurements. The MD
simulation was conducted in two temperatures, 283 K(low) and 313 K (high). To analyze the absorbance of
SWNTs, we decomposed the spectra of the SWNTs,
then analyzed the results using the regression curve.
Fig.2 shows the plot of the area of the peaks at 0.75-nm Fig.1 Chemical structure of riboflavin.
diameter of the SWNTs vs. solubilization temperature,in which LogNormal and Linear plots suggest a specificadsorption of riboflavin at lower temperatures, andnon-specific temperature dependent adsorption at higher
temperatures. From the MD simulation, we evaluatedthe number of adsorbed riboflavin increased withtemperature.
[1] F. Papadimitrakopoulos et al, Science 2009, 323, 1319.
[2] N. Nakashima et al, Chem. Lett. 2015, 44, 566.
Corresponding Author: N. Nakashima
Tel: +81-92-802-2840, Fax: +81-92-802-2840,
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 91 - 91 -Fig.2 Plot of the area of peaks at 0.75-nm
diameter of the SWNTs vs. solubilization
temperature.

2P-14
Synthesis and Characterization of Single-Molecule Magnet
Encapsulated in Carbon Nanotube
Mudasir Ahmad Yatoo1, ○Ryo Nakanishi1,2, Keiichi Katoh1,2, Takeshi Saito3, Masahiro
Yamashita1,2
1Department of Chemistry, Tohoku University, Sendai 980-8578, Japan
2
JST-CREST, Chiyoda-ku, Tokyo 102-0075, Japan
3
National Institute of Advanced Industrial Science a d Technology (AIST), Tsukuba
305-8565, Japan
Single-molecule magnet (SMM) is a molecule which shows slow relaxation of themagnetization of purely molecular origin due to the large ground spin state with a uniaxial
magnetic anisotropy. On the basis of their unique magnetic properties, SMM is investigatedvigorously these days for potential applications in the fields of molecular spintronics, data
storage devices and quantum computing. However, any real application of SMM requires
their communication with the outside macroscopic world, to allow read-and-write processes.
Simultaneously, smaller spin-spin interaction between each molecule is important in order to
use the SMMs as isolated magnets. Here, we focused on carbon nanotube (CNT) because of
the high electric conductivity which offers a unique solution to linking SMM to the outside
world [1], and the internal nano-space in which the intermolecular interaction can be reduced
from three- to one-dimensionally. Given the vast potentials of
this field, we are working on synthesizing CNT-SMM hybrids
in which SMM is encapsulated into CNT.
In this work, We used Dysprosium(III) acetylacetonate
complexes [Dy(acac)3] which show SMM-like behavior when
they are diluted [2]. Firstly, we have synthesized CNT-SMM
hybrid using multi-walled CNT (MWCNT; Aldrich) bysoaking cap-opened CNT into 1,2-dichloroethane solution ofDy(acac)3. From transmission electron microscope (TEM)
observation, we observed the stark contrast inside CNT and
further presence of dysprosium could be confirmed by energy
dispersive X-ray (EDX) spectroscopy (Fig. 1). From AC Fig. 1 TEM image of Dy(acac)3
magnetic susceptibility measurements, frequency dependence @MWCNT. Inset shows the
EDX spectrum.
could be confirmed, which suggests the Dy(acac)3 still retain
the SMM properties even in MWCNT. The relaxation time ofthis hybrid could be estimated as 5.3 x 10-9 s, this number issmaller than that of before the encapsulation, which may
indicate the spin-spin interaction of each SMM become strong.
Dy(acac)3 could also be introduced in single-walled CNT(which is produced by enhanced direct injection pyrolytic
synthesis method) by sublimation method, then the detailed
characterization and comparison are in progress.
Fig. 2 AC magnetic susceptibility[1] M. C. Giménez-López. et al. Nat. Comm., 2011, 407, 1415.
(out of phase) of Dy(acac)3@[2] S.-D. Jiang, et. al, Angew. Chem. Int. Ed. 2010, 49, 7448 –7451.
MWCNT.
Corresponding Author: M. Yamashita
Tel: +81- 22-795-6544, Fax: +81- 22-795-6548, E-mail: yamasita@agnus.chem.tohoku.ac.jp- 92 - 92 -

2P-15
Metalorganic chains assambled inside single-wall carbon
nanotubes◦Oleg Domanov1 , Markus Sauer1 , Michael Eisterer2 , Takashi Saito3 ,Herwig Peterlik1 , Thomas Pichler1 , Hidetsugu Shiozawa1
1 Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
2 Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2,1020 Vienna, Austria
3 National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi,

Tsukuba 305-8565, Japan

Molecular chains are of great interest due to their unique magnetic and structural properties which stem from intermolecular interactions. The conﬁned nanospace of single-wallcarbon nanotubes (SWCNT) allow molecules to be arranged in one dimensional chains(see Fig. 1)[1-2]. Our research is focused on the structural and magnetic properties ofsuch 1D magnetic systems investigated by means of X-ray diﬀraction(XRD), superconducting quantum interference device (SQUID), X-ray/UV Photoemission Spectroscopy(XPS, UPS) and X-ray Absorbtion Spectroscopy (XAS). XRD data suggest unique 1D
molecular arrangements with the lattice constant that varies with the host SWCNT’s
diameter. On the basis of SQUID data, we will discuss the magnetic ground states andpossible bulk magnetic ordering.
Our study provides insight into the magnetic and structural properties of 1D molecular
chains that would pave the way towards advanced metalorganic-based magnets.
We acknowledge ﬁnancial support from the Austrian Science Fund (FWF).

Figure 1: 1-D Nickel(II) acetylacetonate (C10 H14 NiO4 ) chain structure inside SWCNT.
[1] M. Kharlamova et al. Nanoscale 7, 1383 (2015).
[2] A. Briones-Leon et al. Phys. Rev. B 87, 195435 (2013).
Corresponding Author: O.DomanovTel: +43-1-4277-72628, Fax: +43-1-4277-9726,
E-mail: oleg.domanov@univie.ac.at- 93 - 93 -

2P-16
Synthesis and electronic evaluation of bilayer graphene○Ryo Hoshino, Yutaro Hayashi, Nozomi Suzuki, Kentaro Imai,
Tomoko Nagata, Nobuyuki Iwata, Hiroshi Yamamoto
College of Science &Technology, Nihon University, 7-24-1 Narashinodai, Funabashi-shi,
Chiba 274-8501 japan
In order to realize superconductivity at room temperature, we fabricate metal intercalated
bilayer graphene. The electron-exciton coupling is expected to generate high temperature
superconductivity [1]. In this study, we report the growth of bilayer graphene and its electric
property.

The single-layered graphene sheet was synthesized on Cu foil by chemical vapor deposition (CVD)method, using CH4, H2 and Ar as process gases. After etching of Cu foil by Fe(NO)3 aqueous
solution, the single-layered graphene was transferred on SiO2/Si substrate. The bilayer graphene
was prepared by transferring the single-layered graphene twice.

Figure1 shows the temperature dependence of the resistance of bilayer graphene, detected bytraditional four wire resistance measurement. The bilayer graphene showed metallic property inthe wide temperature range of 300 to 40K. A small increase was observed below 40K. In general,pure bilayer graphene is a semiconductor, while metal-intercalation makes bilayer graphene metal [2].
The metallic behavior of our bilayer graphene suggests the metal-intercalation. The Fe ion may beintercalated during the Cu etching process. The details will be discussed.
1300[1] Akimitsu, Parity. MARUZEN. 05, 6-12 (2008).

Corresponding Author: Nobuyuki Iwata
Tel: +81-47-469-5457
E-mail: iwata.nobuyuki@nihon-u.ac.jp1275

Sheet resistance[/sq][2]Yan-Feng, Appl. Phys. Lett. 102, 231906(2013)

1250
1225
1200
1175
1150

0

50

100

150

200

250

Temperature[K]Figure-1. Temperature dependence of the sheet
resistance of the bilayer graphene

- 94 - 94 -300



2P-17Growth temperature dependence of CVD-growthof highly uniform multilayer graphene using Au/Ni catalyst○Yuki Ueda1, Jumpei Yamada1, Itsuki Uchibori1, Masashi Horibe1, Shinichi Matsuda1,
Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University,
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
Graphene possesses special electrical characteristics, such as, low resistivity, hightolerance for the current flow. The number of the layer is a key parameter of the performancesof the multilayer graphene (MLG) because they are largely depend on the number of thelayers. Metal catalyst with a high solubility of carbon such as Ni, Co, and Fe are usually used
to synthesize MLG by CVD, while precipitation method is also employed to grow MLG. The
uniformity of the layer is very important for the applications of MLG. However, it is quitedifficult to control the uniformity of MLG especially for the precipitation method. In thispaper, the uniformity of the MLG by CVD is tried to improve by the use of the Au/Ni catalyst
and the optimization of growth temperature.
MLG was grown by CVD using Au/Ni catalyst. Ethanol kept at 5 oC was bubbled forsuppling it in the CVD furnace. The MLG was grown with flowing the mixture gas of H2, N2,
and ethanol for 5 min at 0.5 atm. The growth temperature was changed between 850-1050 oC.
The layer number of the graphene was studied using Raman spectroscopy [1].
Differential interference contrast microscope (DICM) images and Raman spectra of
the MLG grown at 950 oC, and 1050 oC are shown Fig.1. The figure shows that the MLG only
exists around the grain boundaries of the Au/Ni catalyst on the sample grown at 950 oC. On
the other hand, MLG covers the whole surface and about 70 % of them are 2-5 layers
graphene on the sample grown at 1050 oC. The very low D peak suggests the high quality of
the grown MLG. It is probably because the nucleation of graphene was largely suppressed by
the low amount of the dissolved carbon from the low solubility of the carbon in the Au/Nicatalyst and the long diffusion length of the carbons on the surface from the high growthtemperature. Consequently, the uniformity MLG was successfully improved.

Fig.1 DICM images and Raman spectra of MLG grown at 950 oC (left) and 1050 oC (right), respectively.
Acknowledgment: This work was supported in part by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011.
Reference: [1] A.C. Ferrari. Solid State Commun., 143 (2007) 47.
Corresponding Author: Y. Ueda, Tel: +81-52-838-2387, E-mail: 153434003@ccalumni.meijo-u.ac.jp- 95 - 95 -

2P-18Synthetic Studies toward BN-Doped Graphene/Nanographene
Using the Borazine Derivatives○Yasuyo Ishio, Haruka Omachi, Ryo Kitaura, and Hisanori Shinohara*

Department of Chemistry & Institute for Advanced Research, Nagoya University, Nagoya
464-8602, Japan.
Heteroatom-doped graphene is attractive as the candidates for various device applications
in electronics and optics because of its semiconductive character in addition to the properties
from graphene, such as high carrier mobility and optical transparency. Recently,
boron/nitrogen co-doped graphene (BN-doped graphene) has been investigated as one of theheteroatom-doped graphene. It is obtained by chemical vapor deposition (CVD) using carbon
source and BN source [1] and solvothermal reaction [2]. However, these reported approaches
are limited to control the positions and amounts of doped B and N atoms. Therefore,
synthesis of the well-defined BN-doped graphene has never been achieved.
To develop a method of the synthesizing well-difeined BN-doped graphene, we focused onusing a BN-doped nanographene, borazine substituted hexa-peri-hexabenzocoronene(BN-HBC)[3], as a feedstock of BN-doped graphene in CVD-growth (Scheme 1). A novel
borazine derivative, chlorine-substituted hexaphenylborazine (Cl-HPB) was synthesized as aprecursor of BN-HBC through one-pot procedure[4,5]. We tackled to planarize Cl-HPB to
BN-HBC via intramolecular C–C bond formation and also attempted direct CVD growth of
BN-doped graphene by using Cl-HPB.

Scheme 1. Synthetic strategy of BN-doped graphene in this work.
[1] P. M. Ajayan et al. Nat. Mater., 9, 430 (2010).
[2] J. Baek et al. Angew. Chem., Int. Ed., 53, 2398 (2014).
[3] H. F. Bettinger et al. Angew. Chem., Int. Ed., 54, 8284 (2015).
[4] S. Yamaguchi et al. J. Am. Chem. Soc., 127, 14859 (2005).
[5] D. Bonifazi et al. Chem.– Eur. J., 19, 7771 (2013).
Corresponding Author: H. Shinohara
Tel: +81-52-789-2482, Fax: +81-52-747-6442,
E-mail: noris@nagoya-u.jp- 96 - 96 -

2P-19Residual particles on transferred CVD graphene○Tomohiro Yasunishi1, Yuya Takabayashi2, Shigeru Kishimoto1,
Ryo Kitaura2, Hisanori Shinohara2, and Yutaka Ohno3
1

Depertment of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan2
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
3
EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan

Graphene is attracting much attention because of the various unique properties such asmechanical flexibility, excellent electrical conductivity, gas impermeability, and so on. By
exploiting the exclusive properties, graphene is considered to be useful for flexible electron
devices [1]. A large-area single-layered graphene can be grown on a Cu foil by the chemical
vapor deposition (CVD) technique [2]. For the device application, the graphene is needed to
be transferred from the Cu foil onto a target substrate. In the transfer process, the Cu foil isnormally etched away by wet etching process [3]. However, there are often residues observedon the transferred graphene as shown in the AFM image of Fig. 1. Such residues are seriously
problematic in device applications; not only a failure in complete transfer of the graphene, butalso current leakage between the graphene and electrodes through an insulator layer in thedevices may be caused by the residual particles. In this work, we have investigated thecomposition of residual particles on graphene after Cu etching by energy-dispersive X-ray
spectrometry (EDX) to find out the origin of the particles and a method to remove them.
Graphene was grown by CVD on a Cu foil at 1050C
using CH4 as a carbon source. After covering thegraphene with a PMMA layer, a thermal release tape
was attached on top to support the PMMA/graphenefilm mechanically. Then, the Cu foil was etched bysoaking into ammonium persulfate ((NH4)2S2O8)
solution (0.5 M) [4] for 1 h. The graphene surface waswashed by HCl solution (10 wt%) for 30 min. We
observed the graphene surface by SEM/EDX (Hitachi,
S-5200 equipped with HORIBA, E-MAX).
Figure 2 shows an EDX spectrum measured in the Fig. 1 AFM image of transferredregion indicated by the white square in the inset SEM graphene.
image. Several peaks were observed in the EDX
spectrum, corresponding to C (0.28 eV), O (0.53 eV),Mg (1.30 eV), Al (1.56 eV), Si (1.84 eV), and Ti (4.56,
4.96 eV). We also observed particles consisting of C, O
and Si. These particles may be attributed to theimpurities contained in the Cu foil and/or the quartz
tube of the CVD furnace.
[1] K. S. Kim et al. Nature 457, 706 (2009).
[2] X. Li et al. Science 324, 1312 (2009).
[3] Y. Lee et al. Nano Lett. 10, 490 (2010).
[4] J. W. Suk et al. ACS Nano 5, 6916 (2011).
Corresponding Author: Y. Ohno
Tel&Fax: +81-052-789-5387,
E-mail: yohno@nagoya-u.jp

Fig. 2 EDX spectrum of a particle ongraphene in white square region of
inset SEM image.

- 97 - 97 -

2P-20Electron conﬁnement in graphene-based junction◦Yuya Inoue1 , Riichiro Saito1
1 Department of physics, Tohoku University, Sendai 980-8578, Japan

Graphene is a material attracting big attentions for applications because of the great
physical property such as high mobility. However, it has a big problem that we can
not make devices such as ﬁeld eﬀect transistor (FET) of graphene unless we make abandgap. The Klein tunneling gives rise to 100% tunneling probability of incident
electrons going perpendicular to the potential barrier [1]. This means that we can not
conﬁne an electron on the monolayer graphene by applying any potential. We also can
not control current by electrostatic gates. However, in the case of bilayer graphene (ABstacking), complete reﬂection against the barrier is realized.
Some previous works show that FET using bilayer graphene can be realized by applying electric ﬁelds perpendicular to the bilayer graphene, which brake the symmetry
between the two layers and result in opening the energy gap [2,3]. In this work, we
consider the following eﬀects to conﬁne electrons, 1) connecting single- and bilayer
graphene and 2) applying the electrostatic potential for bilayer graphene. We calculate
the electron structure by tight-binding method and show the possibilities of electron
conﬁnement in such a device.
[1] M. I. Katsnelson et al. Nature Physics 2, 620 (2006).
[2] Y. Zhang, et al. Nature 459, 820 (2009).
[3] S-L. Li et al. Acs Nano 5, 500 (2011).
Corresponding Author: Y. Inoue
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: inoue@ﬂex.phys.tohoku.ac.jp- 98 - 98 -

2P-21
pH Dependence of the Electrochemical Reaction of Graphene Oxide
Evaluated by SEIRAS○Katsuhiko Nishiyama1,3, Yasuhiro Yoshimura1, Yusuke Hayashi1, Kazuto Hatakeyama1,4,
Michio Koinuma1,4 Soichiro. Yoshimoto2,3, and Yasumichi Matsumoto1,4
1

Graduate School of Science and Technology and 2Priority Organization for Innovation andExcellence, Kumamoto University Kumamoto 860-8555, Japan
3
Kumamoto Institute for Photo-Electro Organics (Phoenics), Kumamoto 862-0901, Japan
4
JST CREST

Graphene oxide (GO) prepared by oxidation of graphite have advantages such as low-cost,mass-productive, and various applications. By reducing GO by chemical and electrochemical,
reduced grapheme oxide (rGO) is prepared. In this study, by surface enhanced infrared
spectroscopy (SEIRAS)[1, 2], the electrochemical, adsorption, and desorption processes werestudied in aqueous solution.
A Bio-Rad FTS-6000 FT-IR spectrometer equipped with an MCT detector and asingle-reflection accessory was used to record spectra. The spectrometer was operated in rapid
scanning mode with a resolution of 4 cm-1. Au thin film electrodes for surface enhanced
infrared spectroscopy (SEIRAS) were prepared by vacuum evaporation onto a Si prism with adeposition rate of ca. 0.67 nm s-1. Sample solution containing GO (4 mg ml-1) was injected
into a SEIRAS cell ([GO] in the cell = 0.4 mg ml-1) and change in FT-IR spectra foradsorption and electrochemical process were recorded.
Fig. 1 shows change in SEIRA spectra, applying potential from 0, -0,2, -0,4, and -0.6 V
after injection of GO dispersed solutions containing 0.1 M HClO4. Here, the spectrum at anopen circuit potential was taken as a reference spectrum. When - 0.6 V was applied, a broadband around 1500 -1700 cm-1 was appeared. The observed band in the region might
correspond to the in-plane vibration mode for the aromatic hydrocarbon caused by the
reduction and change in the adsorption state of GO. In addition, the decrease in absorbancearound 1200 cm-1 was clearly observed. This band is attributed to the epoxy group of the GO,
which indicates that the epoxy group of the GO was reduced at -0.6 V. To ensure thereversibility of the reaction in 0.1 M HClO4, the electrode potential was back to 0 V, however,no change in the spectrum was observed. Similar experiments have been conducted in 0.1 M
NaClO4 and 0.1 M NaOH. The reduction of the epoxy group was also observed in the neutral
and alkaline solution, however, noreversible changes in absorption
band
attributed
totheelectrochemical
reactionwereobserved.

[1] K. Nishiyama et al. 4th Graphene Oxide
Symposium, in Kumamoto (2015).
[2] K. Nishiyama et al., 7th International
Surface Science Symposium, Matsue(2014).
Corresponding Author: K. Nishiyama
Tel&Fax: +81-96-342-3657,
E-mail: nisiyama@kumamoto-u.ac.jp

Fig. 1 Potential dependence of SEIRA spectra of GO in 0.1
M HClO4 .

- 99 - 99 -

2P-22Comprehensive Study of Edge-Disordered Graphene Nanoribbons○K. Takashima1, T. Yamamoto1, 2
1

Department of Electrical Engineering, Tokyo University of Science, Japan2
Department of Liberal Arts, Tokyo University of Science, Japan

Graphene is expected to be a channel material of field effect transistors (FETs) because of its
high carrier mobility. However no band gap of the graphene is a serious problem for its FET
application. One possible way to overcome the gap-opening problem is to process it in theform of a nanometer width ribbon, referred as graphene nanoribbons (GNRs). They have beensuccessfully applied to FETs with high on-off ratio. A recent experiment reported that theresistance of GNRs increases exponentially with their length even at the room temperature [1].
This non-Ohmic behavior is due to the edge-vacancy of GNRs. The effects of edge-vacancy
become more remarkable when the ribbon width becomes narrower in the future. However
the electronic transport properties of such narrow GNRs have not been clarified yet.
In this study, we have investigated the coherent electronic transport in edge-disorderedarmchair GNRs (ED-AGNRs) using the nonequilibrium Green’s function method combinedwith a tight-binding model. In our simulation model, the edge vacancy is modeled by adding
or removing pairs of carbon atoms at the edges. We calculated electrical conductances of
ED-AGNRs by changing the roughness concentration from 0% to 30% and the ribbon-widthfrom 1.48nm to 2.95nm. We confirmed that the electrical conductances G of ED-AGNRs
decrease exponentially with their lengths L, i.e., G∝exp(-L/ξ), where ξ is the localization
length [2]. Moreover, we numerically determined the vacancy-concentration dependence of ξand the ribbon-width dependence of ξ. In addition, we gave a physical interpretation of thesedependences through theoretical analysis based on the perturbation theory. This result
provides a guideline for developing GNR-based FETs.

Fig.1: Schematic picture of edge-disordered graphene nanoribbon model
References:[1] Xu et al., Nano Lett. 11, 1082 (2011).
[2] K. Takashima and T. Yamamoto., APL, 104, 093105 (2014).
Corresponding Author: T. Yamamoto
E-mail: takahiro@rs.tus.ac.jp- 100 - 100 -2P-23
Photocurrent spectroscopy in monolayer WSe2 p-n junction○S. Kimura1, D. Kozawa1, T. Fujimoto1, Y. Wada1, J. Pu1, K. Matsuki1, L. J. Li 2, T.Takenobu1
1

2

Department of Applied Physics, Waseda University, Shinjuku 169-8555, Japan
Physical Sciences and Engineering Division, KAUST, Thuwal 23955-6900, Saudi Arabia

Transition metal dichalcogenide (TMD) monolayers are ultimately thin two-dimensional
materials and therefore have intriguing optical properties, such as strong enhancement of
Coulomb interactions of photoexcited electron-hole pair (or exciton). The spectrum of excited
exciton states, one of focused topics, has been observed by optical measurements [1-3].
Although the fine structures of the excited exciton states are observable via photocurrent
spectroscopy, the exciton fine structure has not yet been observed due to difficulties of p-njunction formation. Here, we address these problems by introducing p-n junction into WSe2
monolayers with electric double layers and investigate their photocurrent spectra, realizing theobservation of exciton fine structure, accompanied with the information on charge-separation
properties, which is the key factor for exciton energy harvesting.
We formed the p-n junctions on CVD-grown large area WSe2 monolayers using the freezingwhile-gating technique, as previously reported by Zhang et al.[4]. Figure 1 shows thephotoresponsivity as a function of excitation photon energy, and is reasonably explained byabsorption spectrum. Lower-energy two peaks (at 1.73 eV and 2.15 eV) are corresponding todirect excitonic transitions with the spin-orbit splitting. We note that higher-energy two peaks(at 2.53 eV and 2.97 eV) are contribution from hot carrier. Moreover, as shown in Fig. 2, wefound weak fine spectrum structure between 1st and 2nd peaks, and we can assign these threepeaks as excited states of exciton (2s, 3s and 4s), indicating relatively high charge-separation
rate in these states.

Fig.1 Photocurrent spectrum of WSe2 p-n junction at 85K.

Fig.2 Fine spectral structures due to excited states.

[1] A. Chernikov, et al. PRL 113, 076802 (2014).

[2]H. M. Hill et al, Nano Lett. 15, 2992 (2015).

[3] J. Shan, et al. PRL 113, 026803 (2014).

[4] Y. J. Zhang, et al. Nano Lett., 13(7), 3023-3028 (2013).

Corresponding Author: Taishi Takenobu, Tel&Fax: +81-3-5286-2981, E-mail: takenobu@waseda.jp- 101 - 101 -2P-24Band-gap tuning of bilayer graphene by defects and inter-layer spacing○Ken Kishimoto and Susumu Okada
Graduate school of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
Electronic structures of graphene are fragile against the external environment, such asatoms, molecules, and substrates, because the electron states near the Fermi level are exposed
to such foreign materials. Indeed, graphene adsorbed on the -quartz is not metal but
semiconductor with a few tens meV band gap because of the modulation of electrostatic
potential on graphene layer induced by the substrate. In our previous work [1], we shows thatbilayer graphene, one of which layer possesses atomic and topological defects, no longer
possesses pairs of linear dispersion bands at or near the Fermi level, but instead has quadricdispersion bands together with the states associated with the defects, even though one of twolayers retains their hexagonal atomic network because of the substantial interlayer interaction.
In this work, we further investigate the influence of the defects in the graphene layer on theelectronic structure of the other pristine graphene layer in terms of the interlayer spacing andthe number of graphene layers using first principles total energy calculations within theframework of density functional theory.
Our DFT calculations show that the energy gap between the bonding and antibonding states of pristine graphene layer in the bilayer structures monotonically decrease with increaseof the interlayer spacing. Figure 1 shows the energy gap of the bilayer graphene, one of whichlayers possesses monovacancies per 4×4 lateral periodicity, as a function of the interlayer
spacing: The gap vanishes at the critical interlayer spacing of 0.5 nm. The fact indicates thatthe influence of the defect on electrostatic
potential of pristine graphene layer is negligible
under the interlayer spacing of 0.5 or wider.
Further calculations on the bilayer graphenewith other defects, we find that the criticalinterlayer spacing strongly depends on thedefect species. We also check how the gap
depends on the number of layers.
Table 1 The critical interlayer spacing at which the pristine
layer possesses Dirac cone..
Defect species

Spacing [nm]Monovacancy (per 4x4)

0.50

Fig. 1, Energy gap between  and  states of

Divacancy

0.43

pristine layer of bilayer graphene as a function of

Hexagonal vacancy (V6)0.51

the interlayer spacing.

Topological defect

0.46[1] K.K, S.O in Abstracts of the 48th FNTG General Symposium (February 2015) p.127
Corresponding Author: K. Kishimoto
Tel: +81-29-853-5600(ext.; 8233)
E-mail: kkishimoto@comas.frsc.tsukuba.ac.jp- 102 - 102 -2P-25Magnetic properties of graphene flakes connected via sp3 C atoms
Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba
305-8577, Japan
Graphene flakes with zigzag edges and a triangular shape exhibits spin polarization
because of the number of non-bonding states arising from the imbalance between two
sublattices of graphitic network. Phenalenyl (C13H9: fused three benzene rings) is the one ofsmallest example that exhibits spin polarization. In the case, the molecule possesses a singly
occupied state at the Fermi level leading to the radical spin with S=1/2 ground state. By
assembling phenalenyl molecules with appropriate intermolecular connections, we can design
various hydrocarbon networks possessing interesting spin states as their ground andmetastable states. In this work, we aim to explore the possible radical spin configurations on
three phenalenyl units connected via sp3 C atoms as the structural model of graphene
nanoflakes with intersectional lines using density functional theory with generalized gradientapproximation. Our calculations showed that the phenalenyl trimmers possess three possible
spin states with the moment of S=1/2 and 3/2. Among the three states, one of the states with
S=1/2 is found to be the ground state spin configuration, in which the two of three radical
spins pairs exhibit the antiparallel coupling while the remaining one exhibit the parallel
coupling. Our findings show that the intersectional sp3 C atoms could not perfectly terminate
the spin interaction among the graphene flakes.
Corresponding Author: Susumu Okada
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: sokada@comas.frsc.tsukuba.ac.jp- 103 - 103 -2P-26
Measurement of powder resistivity of carbon nanomaterials
with different geometries and graphitic structures○Y. Suda1, K. Mizui1, T. Ohiro1, Y. Shimizu1, T. Harigai1, H. Takikawa1, H. Ue2
1

Department of Electrical and Electronic Information Engineering, Toyohashi University ofTechnology, Toyohashi, Aichi 441-8580, Japan
2
Fuji Research Laboratory, Tokai Carbon Co., Ltd., Oyama, Shizuoka 410-1431, Japan

1. Introduction
Carbon black, nanometer-size carbon particles, is commercially used as the catalyst
support in fuel cell owing to its high surface area, porosity, electric conductivity, low density,and low cost. In previous work, we have used various carbon nanomaterials as catalyst
supports for direct methanol fuel cell (DMFC) [1]. In this study, we measured the powder
resistivity of carbon nanomaterials with different geometries and graphitic structures.
2. Experimental
The carbon nanomaterials were characterized using scanning electron microscopy (SEM;
S-4500II and SU8000, Hitachi) and compressive resistivity measurements. The powder
resistivity of compressed carbon nanomaterials is the result of a combination of the number offactors, including the resistivity of the individual particles, the degree of contact between theparticles, and their packing density.
3. Results
The compressive resistivity of different carbon nanomaterials are listed in Table 1. From
Table 1, carbon nanoballoon (CNB), which was prepared by heat treatment of Arc black(AcB), showed comparable powder resistivity to commercial Vulcan XC-72R (Vulcan).
Moreover, in the comparison of fibrous carbon nanomaterials, carbon nanocoil (CNC) andvapor-grown carbon fiber (VGCF-X), VGCF-X showed lower resistivity.
Table 1. Compressive resistivity of different carbon nanomaterials
SampleCompression

Area ofCompression

Current，Voltage，Resistance,

Resistivity,

mass，gpressure，MPabase，cm2

bulk，cm

mA

V

Ω

Ω cm

CNB

0.30

1.01

1.50

0.81

300.00

0.07

0.23

0.43

Vulcan

0.30

1.01

1.50

0.56

300.00

0.04

0.13

0.36

CNC

0.30

1.01

1.50

0.53

300.00

0.20

0.67

1.89

AcB

0.30

1.01

1.50

0.39

300.00

0.58

1.93

7.44

VGCF-X

0.30

1.01

1.50

1.15

300.00

0.12

0.40

0.52

This work has been partly supported by the EIRIS Project from Toyohashi University ofTechnology (TUT); JSPS KAKENHI Grant Number 24360108 and 15K13946; and the
Toyota Physical and Chemical Research Institute, “Scholar Project”.
[1] Yoshiyuki Suda, Yoshiaki Shimizu, Masahiro Ozaki, et al. Materials Today Communications, 3 (2015)
96-103
Corresponding Author: Y. Suda
Tel: +81-532-44-6726, Fax: +81-532-44-6757
E-mail: suda@ee.tut.ac.jp- 104 - 104 -2P-27
Evaluation of catalytic activity of fuel cell catalyst
nanoparticles loaded on carbon nanoballoon○Y. Suda1, T. Ohiro1, K. Mizui1, T. Harigai1, H. Takikawa1, H. Ue2
1

Department of Electrical and Electronic Information Engineering, Toyohashi University ofTechnology, Toyohashi, Aichi 441-8580, Japan
2
Fuji Research Laboratory, Tokai Carbon Co., Ltd., Oyama, Shizuoka 410-1431, Japan

1. Introduction
Carbon black, nanometer-size carbon particles, is commercially used as the catalyst
support in fuel cell owing to its high surface area, porosity, electric conductivity, low density,and low cost. In previous work, we have used various carbon nanomaterials as catalyst
supports for direct methanol fuel cells (DMFC) [1]. In this study, we used carbon nanoballoon(CNB) as a catalyst support and measured the catalytic activity of CNB-supported PtRu
catalyst.
2. Experimental
The twin-torch arc discharge apparatus was used for AcB synthesis. CNB was prepared bya heat treatment in Ar gas at 2600°C [2]. The particle shape of CNB is hollow. CNB isgraphitic and has high conductivity. We prepared PtRu catalysts for the DMFC anode. The
PtRu catalysts were loaded onto CNB by the reduction method using sodium boron hydrate(NaBH4).
3. Results
Table 1 shows the electrochemically active surface area (ECSA) and the potential at peakcurrent density during methanol oxidation reaction (MOR) of the PtRu catalysts with different
loadings. The highest ECSA was observed at a loading of 15 wt.%, while they decreased withthe catalyst loading. The PtRu catalysts supported on CNB showed highest current density of
2.07 mA cm−2, when the catalyst loading was 30 wt.%.
Table 1. Electrochemical properties of PtRu catalyst particles loaded on carbon nanoballoon.

ECSA / m2 g-1

Potential at peak current

Peak current

density / V (vs Ag/AgCl)density / mA cm-2

PtRu/CNB (15wt.%)

131.1

0.64

0.49

PtRu/CNB (30wt.%)

53.8

0.61

2.07

PtRu/CNB (45wt.%)

45.3

0.67

2.05

This work has been partly supported by the EIIRIS Project from Toyohashi University ofTechnology (TUT); JSPS KAKENHI Grant Number 24360108 and 15K13946; and the
Toyota Physical and Chemical Research Institute, "Scholar Project".
[1] Y. Suda et al. Materials Today Communications. Vol 3, pp. 96-103 (2015).
[2] T. Ikeda et al. Japanese Journal of Applied Physics Vol 50, 01AF13 (2011).
Corresponding Author: Y. Suda
Tel: +81 532 44 6726, Fax: +81 532 44 6757
E-mail: suda@ee.tut.ac.jp- 105 - 105 -2P-28Structure of amorphous carbon deposited on nanometer-seized nickel
particles under ultrahigh vacuum at room temperature○Koji Asaka, Yahachi Saito
Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
We studied the structures of amorphous carbon (a-C) films deposited on nickel (Ni)nanoparticles with clean surfaces at room temperature by transmission electron microscopy(TEM) and Raman spectroscopy. The a-C films on the surfaces of the nanoparticles havealready been transformed into disordered graphitic layers without annealing.
The Ni nanoparticles were prepared on NaClsubstrates by electron-beam deposition at a basepressure of less than 3×10-7 Pa at 673 K, andsuccessively a-C was deposited onto the nanoparticles
at room temperature without exposing the nanoparticles
to the atmosphere. The structures of the a-C films wereobserved by high-resolution TEM operated at 120 kV.
Raman spectra were measured using a laser excitation
source with a wavelength of 532 nm.
Figures 1(a) and 1(b) show a TEM image of the Ni
nanoparticles on the a-C film which was successively
deposited without exposing the nanoparticles to theatmosphere and its selected-area electron diffraction
pattern, respectively. The diameter distribution of the Ni
nanoparticles is shown in Fig. 1(c). The surfaces of thenanoparticles are surrounded by defined facets and the[001] direction of the nanoparticles is perpendicular to Fig.1 (a) TEM image, (b) its selected-area
the a-C film plane. The average diameter of the electron diffraction pattern, and (c)nanoparticles is 5.74 ± 0.02 nm. Figure 2 shows a diameter distribution of Ni nanoparticles
high-resolution image of the Ni nanoparticles. On the on the a-C film.
surfaces of the nanoparticles, disordered graphitic
layers similar to the structure of carbon black arealready formed without annealing. The spacing of thelayers shown by the arrows in Fig. 2 is about 0.36 nm,
which is 4 % times as large as that of graphite. On theother hand, in the case where a-C was deposited atroom temperature after the nanoparticles were exposedto the atmosphere, no graphitic layer was formed on thenanoparticles. When the samples were heat-treated atmore than 873 K for 10 min in argon gas flow ambience,a few graphitic layers on the nanoparticles were formed.
These results suggest that the Ni nanoparticles with theclean surfaces cause a decrease in graphitization Fig.2 High-resolution image of Ni
temperature of a-C.
nanoparticles.
Corresponding Author: K. Asaka
Tel: +81-52-789-4464, Fax: +81-52-789-3703, E-mail: asaka@nuqe.nagoya-u.ac.jp- 106 - 106 -2P-29Conducting one-dimensional interface
in an atomic-layer semiconductor heterojunction○Yu Kobayashi1, Yutaka Maniwa1, and Yasumitsu Miyata1,2,*
1

Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
JST, PRESTO, Kawaguchi, 332-0012, Japan

So far, semiconductor heterojunction interfaces with two-dimensional (2D) electron gas
have played an important role in condensed-matter physics and electronics. Recent progress of
atomic layer research provides an opportunity to realize novel, one-dimensional (1D) electronicsystem at heterojunction interface of atomic layers. For this purpose, atomically thin transition
metal dichalcogenides (TMDCs) are an ideal material because of their tunable electronic
properties. In recent studies, several groups including ours have reported the direct synthesis of
TMDC-based heterojunctions by vapor-phase growth techniques [1-4]. However, 1D interface
state at the heterojunction has never observed probably due to the problems in sample quality
and/or alloying at interface.
Here, we report on the first observation of highly-conductive 1D interface state in a 2D
semiconductor heterojunction. The present heterojunction consists of lateral and vertical
heterostructure based on bilayer MoS2/WS2 and grown by chemical vapor deposition asreported previously [5]. In the present work, thegraphite substrate also allows us to probe
electronic properties around the interface byconductive atomic force microscopy. Unlike asimple monolayer WS2/MoS2 heterojunction,
the present bilayer-based heterojunction has
highly-conductive region along the interface(Fig.1). This conductivity enhancement can beunderstood as the result of carrier accumulation
due to quantum confinement at the interface.

Fig.1 (a) Height and (b) current images of the

The present results pave the way forbilayer heterostructure. (c) The magnified current

understanding and applications of novel 1D
electronic system.

image at the interface in b. (d) Current profile at the
red dotted line in c.

[1] Y. Gong, et al. Nat. Mater. 13, 1135 (2014)., [2] X. Duan, et al. Nat. Nanotechnol, 9, 1024 (2014).,[3] C. Huang, et al. Nat. Mater. 13, 1096 (2014). [4] Y. Kobayashi, et al., Nano Res. in press.
[5] Y. Kobayashi et al., ACS Nano, 9, 4056 (2015).
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 107 - 107 -2P-30
CVD growth and characterization of monolayer Nb1-xWxS2 alloys○Shogo Sasaki1, Yu Kobayashi1, Yutaka Maniwa1, Yasumitsu Miyata1,2
1Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
2
JST, PRESTO, Kawaguchi 332-0012, Japan

Atomic-layer transition metal dichalcogenides (TMDCs) are attractive components for
two-dimensional layered heterostructures because of their tunable electronic properties. To
control their bandgap and carrier densities, there are several approaches such as chemical
doping and alloying. In our previous works, we reported the growth of bandgap-tunableMo1-xWxS2 alloys [1] and highly-conductive Nb1-xWxS2 alloys [2] using thin-film
sulfurization. However, it is difficult to obtain large-area crystals using thin film sulfurization
probably due to the limitation of nucleation densities. To solve this issue, we have developed
a growth method of large-area, monolayer TMDC alloys using chemical vapor deposition(CVD) because of its tunability of supplying rate of precursors.
In this presentation, we report the growth and characterization of monolayer Nb-doped
WS2. Nb-doped WS2 were grown on graphite and sapphire substrates by CVD method using
WO3 and Nb2O5 powders at 1100℃ under argon/sulfur atmosphere. Figure 1a shows an
optical image of a typical triangle-shaped crystal with a size of 50 m on the sapphire
substrate. The crystals have two characteristic small Raman peaks at 380 cm-1 and 400 cm-1
between WS2-E2g and WS2-A1’ peaks (Fig. 1b). Photoluminescence spectra show two broad
peaks at 1.96 eV and 1.70 eV for the doped samples (Fig. 1c). These results suggest that thepresent approach enables large-area growth of Nb-doped WS2 monolayers, and could provide
an effective way to produce carrier-controlled TMDC-based heterostructures.

Fig. 1 (a) Optical image of a typical monolayer Nb-doped WS2 crystal grown on a sapphire substrate. (b) Ramanand (c) photoluminescence spectra of undoped and Nb-doped WS2 monolayers.
[1] Y. Kobayashi et al. Nano Res. (2015) in press.
[2] S. Sasaki et al. The 48th FNTG symposium.
Corresponding Author: Yasumitsu Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp- 108 - 108 -2P-31In-Plane Heterostructures of Graphene and MoS2
○Yoshihiro Shiratsuchi,1 Hiroko Endo,2 Masaharu Tsuji,3 Hiroki Hibino,4,5 Hiroki Ago1,2,6
Grad. Schl. Eng. Sci., Kyushu Univ., Fukuoka 816-8580, Japan, 2Inst. Mater. Chem. Eng.,
Kyushu Univ., Fukuoka 816-8580, 3Center Carbon Res., Kyushu Univ., Fukuoka 8165-0943,
Japan, 4Kwansei Gakuin Univ., Hyogo 669-1337, Japan, 5NTT Res. Lab., Kanagawa
243-0198, Japan, 6PRESTO-JST, Saitama 332-0012, Japan
1

Heterostructures of atomically thin, layered materials offer unique electronic and photonic
properties together with high mechanical flexibility. Graphene shows extraordinary highcarrier mobility, while monolayer MoS2 has a finite band gap of 1.9 eV with high opticalabsorption for the visible light. Therefore, the combination of these two materials as well as
their Schottky junction is expected to offer unique devices with high optical response [1-4].
However, most of these devices are made with exfoliated films [1,5] so that the device size islimited and not suitable for large-scale devices. Here, we demonstrate direct CVD growth of
MoS2-graphene in-plane heterostructures, as well as their structural characterization andcarrier transport properties.
To synthesize MoS2-graphene heterostructures, hexagonal graphene domains grown byambient pressure CVD on Cu foil were transferred onto a sapphire substrate, followed by thesecond CVD process to grow MoS2 using MoO3 and S as feedstock. Figure 1a shows an
SEM image of the in-plane graphene-MoS2 heterostructure. It is seen that MoS2 domains
preferentially grow from sides of graphene domains. Raman mapping image and spectrum(Fig. 1b,c) support the formation of monolayer MoS2 at the sides of CVD graphene.
Interestingly, the selected-area diffraction measured by low-energy electron microscope(LEEM) shown in Fig. 1d indicates that some of the MoS2 domains have the identicalorientation with the neighboring graphene domains, signifying the lateral epitaxy. We will
also present transport properties in these unique heterostructures.

Figure 1. (a) SEM image of the graphene-MoS2 in-plane heterostructure. (b) Raman mapping image of the A1g
intensity of MoS2. (c) Raman spectrum measured at the point 1 of (b). (d) Selected-area electron diffraction
pattern obtained from the heterostructure.
References: [1] K. Roy et al., Nat. Nanotech., 8, 826 (2013). [2] H. Tian et al., Sci. Rep., 4, 5951 (2014). [3] H.
Ago et al., ACS Appl. Mater. Interfaces, 7, 5265 (2015). [4] J. Y. Kwak et al., Nano Lett., 14, 4511 (2014). [5] G.
H. Lee et al., ACS Nano, 7, 7931 (2013).
Corresponding Author: Hiroki Ago (Tel&Fax: +81-92-583-7817, E-mail: ago@cm.kyushu-u.ac.jp)- 109 - 109 -2P-32Functionalization of few-layer tungsten diselenide
with mild O2 plasma treatment○Reito Nagai, Toshiaki Kato, Tomoyuki Takahashi, and Toshiro Kaneko
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
Atomically-thin two-dimensional (2D) sheets attract intense attention for their superior
electrical and optical features. Transition metal dichalcogenide (TMD) is known as a 2D
material with excellent semiconducting properties. Optical and electrical properties of TMD
strongly depend on its number of layer. Monolayer TMD has strong photoluminescence (PL)intensity due to their direct band gap [1]. Although multi-layer (2～5 layers) TMDs don’t
show bright PL for its indirect band structure, the carrier mobility is higher than that ofmonolayer one. For the fabrication of high performance optoelectrical device, it is required to
combine these optical and electrical properties of mono- and multi-layer TMD, respectively.
In this study, we investigated the electrical and optical properties of few-layer tungsten
diselenide (WSe2) before and after mild plasma treatment [2,3] (Fig.1). We found that mild O2
plasma treatment can drastically enhance PL intensity of WSe2, whereas the initial electricalproperties of WSe2 can be maintained even after the mild plasma treatment. This result
indicates the mild O2 plasma treatment can fabricate functionalized TMD including better
optoelectrical features.

Fig.1: Schematic illustration of WSe2-FET
device structure[1] T. Kato and T. Kaneko, ACS Nano 8, 12777 (2014).
[2] T. Kato, L. Jiao, X. Wang, H. Wang, X. Li, L. Zhang, R. Hatakeyama, and H. Dai, Small 7, 574 (2011).
[3] T. Kato and R. Hatakeyama, Nature Nanotechnology 7, 651 (2012).
Corresponding Author: R. Nagai
Tel: +81-22-795-7046
E-mail: nagai14@ecei.tohoku.ac.jp- 110 - 110 -2P-33
Local Optical Absorption Spectra of Transition Metal Dichalcogenide
Monolayer by Scanning Near-field Optical Microscopy Measurements○Junji Nozaki1, Shohei Mori1, Yasumitsu Miyata1,2, Yutaka Maniwa1, Kazuhiro Yanagi1*
1

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
2
PRESTO, JST, Kawaguchi, Saitama 332-0012, Japan

Transition metal dichalcogenide (TMDCs) have attracted a lot of interest due to theirremarkable physical properties. 1,2 Here, we investigated local optical absorption spectra of
MoS2 thin sheet by combining scanning near-field optical microscopy (SNOM) andsuper-continuum laser light source. And we revealed local optical absorption spectra of MoS2
thin layer in high resolution which overcomes diffraction limit of excitation laser wavelength.
We connected super-continuum laser light source to monochromator, and wavelength of
excitation light is selected. Then, selected visible excitation laser light ranging from 450 to
740 nm wavelength is introduced to our SNOM system. In SNOM system, laser light isfocused on the SNOM cantilever (aperture diameter: ~90nm) to make evanescent light fieldon the far side of the aperture. The sample is scanned, transmitted far-field is detected throughthe inverted objective lens at the bottom. We determined the absorbance of single layer MoS2
as follows. The transmitted light intensity at sapphire substrate was I0, and the transmitted
light intensity at the sample was I, and the absorbance was determined as –log(I/I0)
The local optical absorption spectra, obtained from SNOM, at sites P and Q corresponding
to the center and edge of the crystal, respectively, areshown in Figure 1. The sampling area of P and Q are
shown in the inset of Fig. 1, and their sizes were 1 m2.
The spectra clearly exhibit the A and B exciton peaks,
suggesting the validity of optical absorption evaluation
using SNOM. However, detailed spectral structures areshown in Fig. 1b and there exists a slightly difference
between the line-shapes of P (center) and Q (edge) sites.
As shown here, the line-shape of the A peak at site Q
was a little broader than the same peak observed at site P.
When we analyzed the line-width of the A peak using a
Gaussian function, its band-width of A peak at Q was(0.048  0.013) eV and that at P was (0.034  0.005) eV.
We identified the slightly difference of the local
absorption structure between the different parts of MoS2
monolayer
by combinationof SNOM
andsuper-continuum light source. We will analyze other
different parts of the crystal, and will proceed further
study to investigate the detail of local absorption spectra.
[1] Qing Hua Wang et al., Nature Nanotech. 7, 699 (2012).
[2] Yu-Ming He et al., Nature Nanotech. 10, 497 (2015).
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494, Fax: +81-42-677-2483,
E-mail: yanagi-kazuhiro@tmu.ac.jp- 111 - 111 -Fig.1: (a) Local absorption structure of
single layer MoS2 measured by SNOM
with super-continuum laser light source(b) detailed structure of center (P) andedge (Q) part.

2P-34
The topological and electronic structure of Starfish nanocarbon〇Natsuki Namba, Yukihiro Takada and Kyoko Nakada
College of Science and Engineering, Aoyama Gakuin University,
5-10-1, Fuchinobe, Chuo-ku Sagamihara 252-5258, Japan
We proposed new sp2 carbon structures named “starfish nanocarbon” (SFNC, Fig 1) andanalyzed the relationships between their structures and electronic states.
We found 12 SFNCs and all of them have 6N heptagons (N is number of arms). We proved
this by topological consideration. SFNCs have common axis at its center. The axis iscomposed of 2N heptagons and 4N hexagons. Removing 2 heptagons that are used for theaxis , SFNCs have 4 heptagons per arm. The structures and electronic states of 12 SFNCs are
identified by the configuration of 4 heptagons per arm.

Fig 1 Name of the parts of SFNC.

We made 2D periodic system of each SFNC (Fig 2). To make this system, we connectedvarious types of SFNCs with various types of tubes. Fig 3 shows the electronic states of themcalculated by Hückel method. We focused on the location of DOS peak and divided 12
starfish nanocarbons. SFNCs with (2N, 0)tubes shows peaks at E=±1 like van Hove
singularity of graphene.
36677 (6, 0)7776 (5, 0)6666 (3, 3)

DOS

DOS

DOS

2
1

EF 0
-1
-2
-3

Fig 2 A periodic system of SFNC .
Corresponding Author: K. Nakada
Tel: +81-42-759-6219 Fax: +81-42-759-6493

Fig3 DOS of the periodic system.

E-mail: nakada@chem.aoyama.ac.jp- 112 - 112 -2P-35
Room temperature synthesis of
two-dimensional organic framework materials○Gayoung Kim1, Tomohiro Shiraki1, Naotoshi Nakashima1,2
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Dimensionally-controlled organic architectures are attracting great attentions due to theirunique structures and functions. In particular, two-dimensional organic frameworks withcrystalline structures are known as covalent organic frameworks (COFs), 1 which are expected
as a promising material for further applications such as gas storage, optoelectronic devices
and catalysis due to their porous and highly-ordered molecular structures. Synthesis of highquality COFs is still challenging, since COFs are generally mixtures of crystalline andamorphous domains. Here we report the room temperature synthesis of an imine-linked COF.
Compared with a COF synthesized by a conventional solvothermal reaction2, our COF has ahighly crystalline structure and shows remarkable gas uptake and high thermal stability.
Benzene-1,3,5-tricarboxylate (1, 24 mg) and phenylendiamine (2, 24 mg) were dissolved
in dioxane (2.5 ml), respectively. The molar ratio of aldehyde and amino groups was 1:1.
After mixing the solutions, 3 M aqueous acetic acid (0.25 ml) was added. Two-day storage at
25 C was found to generate a precipitate, which was collected by filtration, then washed withacetone. The obtained solid was dried overnight in vacuo at 80 C to provide a pale yellow
powder (COF1, Fig. 1).
The XRD pattern (Fig. 2) shows obvious diffraction peaks at 4.8, 8.1, 9.3, 12.4, and 25.8
degrees, which are attributed to the (100), (110), (200), (210), and (001) facets of the twodimensional crystal structure with an eclipsed arrangement2. The N2 adsorption measurement
for the sample was conducted. Based on the BET analysis, the surface area was determined to
be 1528 m2/g, which was 3.7 times higher than that of the solvothermally synthesized COF(410 m2/g). The TGA analysis identified that the COF1 has a better thermal stability(degradation temperature: 450C) compared to that (310C2) synthesized by the solvothermal
method. Synthesis of a nitrogen-doped graphitic carbon based on carbonization of the highly
crystalline COF will be reported at the meeting.
100

110 200
210
4

Fig.1 Schematic representation of COF1 synthesis.

8

12

001
16

20

24

2 / degree28

32

Fig.2 XRD pattern of COF1.

[1] O. M. Yaghi et al. Science 310, 1166 (2005), [2] W. Wang et al. J. Am. Chem. Soc. 133, 19816 (2011).
Corresponding Author: N. Nakashima
Tel: +81-92-802-2840, Fax: +81-92-802-2840,
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 113 - 113 -3P-1
Thermal [2+2] cycloaddition of [Li+@C60]NTf2- with anethole
via single electron transfer process○Yu Yamazaki, Ken Kokubo, Ikuma Naohiko, Hidehiro Sakurai
Division of Applied Chemistry, Graduate School of Engineering, Osaka University,
Suita 565-0871, Japan
Lithium-ion-encapsulated fullerene Li+@C60 exhibits ionic property and stronger
electron acceptability than pristine C60. Our previous report revealed that [4+2] Diels-Alderreaction of Li+@C60 with 1,3-cyclohexadiene was ca. 2400-fold accelerated than that of C60,
giving a novel product [1].
On the other hand, the thermal [2+2] cycloaddition of C60 with alkene is thermallyforbidden and photo-induced cycloaddition with anethole through single electron transfer
process has been reported [2]. Only highly electron-rich alkenes such as enamine anddienamine can undergo thermal [2+2] cycloaddition via single electron transfer [3].
In this study, we report a [2+2] cycloaddition of [Li+@C60]NTf2- with anethole via
single electron transfer process under thermal condition. The obtained [2+2] cycloadduct was
fully characterized by 1H, 13C, 7Li-NMR and MALDI-TOF MS, and the stereochemistry wasdetermined as (E)-isomer by means of NOESY measurement. The electronic properties of the
product were compared with those of both parent Li+@C60 and the corresponding [2+2]adduct with pristine C60.

[1] (a) H. Ueno, K. Kokubo, Y. Nakamura, K. Ohkubo, N. Ikuma, H. Moriyama, S. Fukuzumi, T. Oshima, Chem.
Commun. 2013, 49, 7376; (b) H. Ueno, H. Kawakami, K. Nakagawa, H. Okada, N. Ikuma, S. Aoyagi, K.
Kokubo, Y. Matsuo, T. Oshima, J. Am. Chem. Soc. 2014, 136, 11162.
[2] G. Vassilikogiannakis, M. Orfanopoulos, Tetrahedron lett. 1997, 38, 4323.
[3] T. Mikie, H. Asahara, K. Nagao, N. Ikuma, K. Kokubo, T. Oshima, Org. Lett. 2011, 13, 4244.
Corresponding Author: K. Kokubo
Tel: +81-6-6879-4592, Fax: +81-6-6879-4593, E-mail: kokubo@chem.eng.osaka-u.ac.jp- 114 - 114 -3P-2
Energetics of fullerenes under an external electric field○Jun-ya Sorimachi, Susumu Okada
Graduate school of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
Because of the hollow-cage structures of pentagons and hexagons, electronic states offullerenes can be approximately regarded as the electron system confined in the quantum wellwith spherical shell. Accordingly, the electronic energy levels of π electrons are bunched
up each other characterized by the spherical harmonics Ylm corresponding to the electrons
confined in a spherical shell or a sphere: It has been known that the highly degenerated states
emerge in the electronic energy level of an isolated C60 molecule. In this work, we clarify theenergetics and electric field response of fullerenes under the constant electric field between
two parallel planar electrodes using density functional theory (DFT) with the effective
screening medium (ESM) method.
Figure 1 shows the total energy of fullerenes, C60, C70 and C78(C2v’), as a function of theelectric field. In the case of C60 and C70, the energy exhibits quadric behavior with respect tothe external field. Thus, the electron system of these fullerenes can be regarded as thespherical electron system, since the total energy of dielectric spherical shell is proportional to
the square of the external parallel electric field. Indeed, the induced carriers by the external
field exhibit symmetric feature along the field direction (Fig. 2). In contrast, the total energyof C78(C2v’) does not exhibit quadric relation under the electric field. We further investigate
the total energy of fullerenes with various molecular orientation under the electric field.

Fig. 1; Correlation between energy and electric field

Fig. 2; Isosurfaces of the induced

about (a) C60, (b) C70 and (c) C78 (C2v’).

charge by the electric field.

Corresponding Author: J. Sorimachi
Tel: +81-29-853-5600(ext.; 8233)
E-mail: jsorimachi@comas.frsc.tsukuba.ac.jp- 115 - 115 -3P-3
Low temperature Raman measurements of iodine molecules encapsulated
in single-walled carbon nanotubes○Shinji Kawasaki, Y. Ishii, Y. Yoshida, Y. Taniguchi, M. Yamada
Nagoya Institute of Technology, Nagoya 466-8555, JapanWe developed very simple method to encapsulate iodine molecules into single-walledcarbon nanotubes (SWCNTs) by electro-oxidation of iodine ions. It was found that the electric
conductivity of SWCNTs is drastically improved by iodine encapsulation because large hole
careers are introduced. It was also found that the SWCNTs encapsulating iodine molecules(I@SWCNTs) are well dispersed in water at low temperature.[1] However, the reason why thedispersibility of I@SWCNTs changes with temperature has not been understood well. In orderto clarify the reason, we performed Raman measurements of I@SWCNTs at several
temperatures from -100ºC to +70 ºC.
SWCNTs (Meijo Nano-Carbon, SO type) having mean tube diameter of ca. 1.5 nm wereused. Iodine encapsulation treatments were done in an electrochemical cell consisting of
SWCNT electrodes and NaI aq. electrolyte. Low temperature Raman measurements were
performed using a JASCO NRS-3300 spectrometer and a Linkam 10036L temperature control
stage. As shown in Fig. 1, relative intensity of iodine Raman peaks observed in low
wavenumber region to G-band peak of SWCNT at around 1600 cm-1 increased withdecreasing temperature. It indicates that the reaction (I2 + I3- → I5-) would be promoted at low
temperature. This hypothesis is supported by that the G-band peak position at low temperature
was shifted toward higher wavenumber side.
I@SWCNT

25°C

Pristine−100°C

Intensity / a.u.

Intensity / a.u.

−100°C

25°C

Pristine

0

1000

2000

Raman shift / cm

−1

3000

1500

1600

1700

Raman shift / cm

−1

Fig. 1 Raman spectra of pristine SWCNT and I@SWCNT at room temperature[1]H. Song, Y. Ishii, A. Al-zubaidi, T. Sakai, S. Kawasaki, Temperature-dependent water solubility ofiodine-doped single-walled carbon nanotubes prepared using an electrochemical method, Phys. Chem. Chem.
Phys. 15, 5767-5770 (2013).
Corresponding Author: S. Kawasaki
Tel: +81-52-735-5221, E-mail: Kawasaki.shinji@nitech.ac.jp- 116 - 116 -3P-4
Rayleigh Scattering Spectroscopy of Single-Walled Carbon Nanotubes in
Various Condition○Toru Osawa1, Takeshi Okochi1, Yoritaka Furukawa1,
Taiki Inoue1, Shohei Chiashi1, Shigeo Maruyama1, 2
1
2

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki, 305-8564, Japan

Single-walled carbon nanotubes (SWNTs) are one of the most promising materials forelectronic devices such as a field effect transistor because of its high mobility and its
nanostructure. However, it is known that electronic structures of SWNTs depend not only on
their structures, known as a chirality, but also on their surrounding environment. Therefore,
understanding actual electronic structures of SWNTs is important to evaluate the performanceand reliability of SWNT devices. Recently, Rayleigh scattering spectroscopy has attracted muchattention as an efficient method to investigate the 1D electronic structure of SWNTs [1].
In this study, we constructed the measurement system and observed Rayleigh scattering
spectra and images of various SWNTs. The schematic diagram of our optical system is shownin Fig. 1. The attenuated continuum laser (the range of wavelength is 400 - 2500 nm) was
focused on SWNTs. Scattered light was measured with CCD array and InGaAs detectors forspectroscopy and with 2D CCD camera for imaging. In order to avoid influence by the straylight, we adopted a confocal system. We measured Rayleigh scattering from dispersed SWNTs
in the surfactant solutions [2], dry-deposited SWNT films [3], suspended SWNTs and so on. As
one example, Fig. 2 and Fig. 3 show SEM image of suspended SWNTs and its Rayleighscattering image, respectively. From these observations, we compared characteristic features of
SWNT electronic structures depending on surrounding environments.
Continuum laser
l= 400 - 2500 nm
8W[1] M. Y. Sfeir et al., Science 306, 1540 (2004).
[2] H. Liu et al., Nat. Commun. 2, 309 (2011).
[3] A. Kaskela et al., Nano Lett. 10, 4349 (2010).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5841-6421,
E-mail: maruyama@photon.t.u-tokyo.ac.jp

Wedged window
Polarizer

Objective

Flip mirror Spectrometer

SWNT sample
CCD camera

Detector

Fig. 1: Schematic diagram of Rayleigh scattering

Suspended SWNT

measurement system.

Si

Slit
Suspended
SWNTs

5 mm

15 mm
Fig. 2: SEM image of suspended SWNTs.

Fig. 3: Rayleigh scattering image of suspended SWNTs.

- 117 - 117 -3P-5

Variety of structural modulations in bridged carbon
nanotubes under joule heating○Yuki Araki1, Kaori Hirahara1, 2
1 Department of Mechanical Engineering, Osaka University, Osaka 565-0871, Japan

2 Center for Atomic and Molecular Technologies, Osaka 565-0871, Japan

Since carbon nanotubes (CNTs) generally show excellent elastic property, theirmachining process requires inducing structural anomalies to obtain the deformedfeatures. In-situ transmission electron microscopy (TEM) has investigated plastic
deformation process of individual CNTs under various deformation modes such as
cutting, bonding, bending, sharpening etc. [1-8 ] by applying mechanical stress with joule
heat. Joule heating is effective to apply energy for cutting or switching carbon-carbon
bonds at the local area of CNTs. In case of joule heating of a straight CNT bridged
between electrodes, usually its central portion has highest temperature, and various
types of structural modulations have been observed there. In some cases voids [2] orkinks [2] firstly formed, or sometimes its diameter partially decreased [3]. When voids
formed, their expansion and/or traveling resulted in cutting of CNTs [2], but sometimes
repair of voids with reducing tube diameter has been observed [4]. Furthermore, whenit comes to multi-walled CNTs, some papers reported that sublimation of carbon atoms
started from outer shells [5] or from inner shells [6]. There is a question how such avariety arises to Joule-heated CNTs. Our previous studies have shown that shapes ofthinning CNTs depend on the temperature increase [7], energy barriers for coalescence,kink formation and sublimation in a CNT has been also discussed[8]. In this study, we
experimentally examined the difference in conditions for occurring the other various
deformation modes by using TEM equipped with a nanomanipulator. By operating thenanomanipulator, an isolated double-walled CNT (DWNT) was bridged between twoelectrodes, and voltage was applied. The changes in the shape of DWNTs with increasing
current were monitored. As the result, formation of voids and kinks, and reducing
diameters promoted by travelling and/or repairing voids or by migration of kinks wereobserved in tens of DWNTs. Sorting these by critical current applied revealed anenergetic trend in the deformation process of bridged DWNTs; formation and migrationof voids requires lower energy than kink formation. Those voids can be repaired byapplying energy comparable to that for sublimation of carbon atoms or form kinks reduce
diameters.
[1] C. Jin et al., Nat. Nanotech. 3, pp. 17-21, (2008)[2] C. Jin et al., Nano Lett. 8 4, pp. 1127-1130, (2008)[3] T. D. Yuzvinsky et al., Nano Lett. 6 12, pp. 2718-2722, (2006)[4] T. Nishijima et al., MICROELECTRON. ENG. 88, pp. 2519-2523, (2011)[5] Y. Nakayama et al., Jpn. J. Appl. Phys. 44 23, pp. 720-722, (2005)[6] C. Jin et al., J. Am. Chem. Soc. 2 6, pp. 1275-1279, (2008)[7] H. Maruyama et al., Appl. Phys. Express 3, 025101, (2010)[8] H. Somada et al., Jpn. J. Appl. Phys. 46 44, pp. 1055-1057 (2007)
Corresponding Authors: Yuki Araki, Kaori Hirahara
Tel: +81-06-6879-7815
E-mail: araki@ne.mech.eng.osaka-u.ac.jp, hirahara@mech.eng.osaka-u.ac.jp- 118 - 118 -3P-6

Structure and solid state properties of hydroxylated single-walledcarbon nanotubes and related materials○Yoshiaki Sano1 and Hironori Ogata 1, 2
1Graduate School of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
2
Research Center for Micro-Nano Technology, Hosei University, Koganei, Tokyo,
184-0003, Japan
It has been reported that polyhydroxylated fullerene (fullerenol: C60(OH)12 ) solids [1]have proton conductivity in a dry atmosphere. On the other hands, C60(OH)24 solids
have no proton conductivity[1]. We previously reported the proton dynamics infullerenol solids studied by solid-state 1H NMR. Local structures, motion of hydroxyl
groups and proton dynamics of the hydroxyl groups on carbon solid surfaces is
considered to be very interesting.
It is reported that the dispersibility in ethanol[2] of CNTs is increased by hydroxylation.
However, it has not been fully elucidated the structure and solid state properties ofhydroxylated CNTs. In this study, SWNTs modiﬁed with hydroxyl groups (SWNT-OH)
were prepared and characterized their structures with FT-IR spectroscopy, Raman
spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscope(TEM) and solid-state NMR spectroscopy.
Synthesis SWNT-OH were performed byusing H2SO4/HNO3 and HCl[3]. Figure 1
shows XPS spectrum of SWNT-OH andpeak fitting conclusion. The ratio of
OH-groups of SWNT-OH was evaluated tobe 24.5 atm%. Detailed results on theproperties of proton motions in SWNT-OH
and related materials will be presented.

Figure 1 XPS spectrum of SWNT-OH

References:[1] K. Hinokuma et al., Chem. Phys. Lett., 341, 442 (2001).
[2] S.Z. Kang, et al.,Colloids Surf. A. 384, 363–367 (2011).
[3] A.G. Osorio, et al., Applied Surface Science 255, 2485–2489, 2008
Corresponding Author: Hironori Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp- 119 - 119 -3P-7Interfacial Engineering of Epoxy Composite Reinforced by
Polybenzimidazole-wrapped Carbon Nanotubes○Tsuyohiko Fujigaya1,2, Yusuke Saegusa1, Shogo Momota3, Nobuhide Uda3,
Naotoshi Nakashima1,2,
Department of Applied Chemistry, Graduate School of Engineering.
Kyushu University, 744, Motooka Nishi-ku Fukuoka, 819-0395, Japan
2 WPI I2CNER. Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
3Department of Aeronautics and Astronautics, Graduate School of Engineering. Kyushu
University, 744, Motooka Nishi-ku Fukuoka, 819-0395, Japan
1

Carbon fiber reinforced plastics (CFRP), typically composed of carbon fiber (CF) andepoxy resin, have been attracting enormous attentions as an alternative material of
metal-based materials because of their remarkable mechanical properties with lightweight.
One of the promising strategy is to replace the CF with stronger materials. In this target,
carbon nanotubes (CNTs) having higher Young’s modulus of 270-950 GPa and tensile
strength of 11-63 GPa than those of CF (typically, 200-700 GPa and 3-7 GPa for Young’s
modulus and tensile modulus, respectively) are emerged as a promising substitution.
However, unlike the CF, it is well recognized that CNTs form strong bundle structures,
which hinder homogeneous mixing with an epoxy matrix. When CNT’s dispersion in epoxy
matrices is poor, the CNT bundles tend to induce a stress concentration, which hampers
effective reinforcement of the composites. And the interfacial adhesion between the CNTs andmatrix is very weak, thus resulting insufficient load transfer to CNTs in the composites.
We describe a novel strategy to reinforce an epoxy resin using carbon nanotubes (CNTs) as
the material, in which polybenzimidazole (PBI) was used as the glue to enable an effective
adhesion between the epoxy matrix and CNT surfaces (Fig. 1). Since the PBI stronglyinteracts with the surfaces of the CNTs and reacts with epoxy matrices to form covalentbonding, the PBI-wrapped CNTs are a promising material for a novel epoxy-CNT hybrid.
Indeed, the PBI-wrapped CNTs (CNT/PBI) exhibited an effective reinforcement of the epoxy
resin hybrid by +28.1% and +8.8% for the tensile strength and Young’s modulus, respectively,
which are much higher (+18.6% and 4.8% reinforcement for tensile strength and Young’s
modulus, respectively) than those of the hybrid using oxidized CNTs in place of PBI-wrapped
CNTs. Scanning electron microscope (SEM) measurements of the fracture surfaces of
CNT/PBI-epoxy hybrid revealed that only very
short CNTs were observed for the CNT/PBI-epoxy
hybrid due to an effective load transfer by theformation of the covalent bonds between the PBI on
the CNTs and the epoxy, which showed a sharp
contrast to that of the oxidized CNT-epoxy
exhibiting long CNTs in the fracture surfaces due tothe slippage at the interfaces [1].
[1] T. Fujigaya et al. submitted.
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842,
E-mail: fujigaya-tcm@mail.cstm.kyushu-u.ac.jp

Fig.1: Schematic of interfacial engineeringof CNT/PBI-epoxy composite.

- 120 - 120 -3P-8
Selective Electrochemical Reduction of CO2 to CO with a Cobalt Chlorin
Complex Adsorbed on Multi-Walled Carbon Nanotubes in Water○Shoko Aoi1, Kentaro Mase1, Kei Ohkubo1,2, Shunichi Fukuzumi1,2
	
  1
Department of Material and Life Science, Graduate School of Engineering, Osaka University, ALCA
and SENTAN, Japan Science and Technology Agency (JST), Suita, Osaka 565-0871, Japan
2
Faculty of Science and Technology, Meijo University and ALCA and SENTAN, Japan
Science and Technology Agency (JST), Tempaku, Nagoya, Aichi 468-8502, Japan

O

OM

e

N
N C
o

O

N

N

Electrocatalytic two-electron reduction of CO2 to CO has merited significant interest, because
CO can be converted to liquid hydrocarbon fuels using H2 by Fischer-Tropsch processes. There
have been extensive studies on the electrocatalytic reduction of CO2 with cobalt macrocycles.
Cobalt macrocycles can also act as good electrocatalysts for selective CO2 reduction to CO inorganic solvents. In water, however, cobalt macrocycles have lacked the selectivity for CO. We
reporthereintheselective(b)electrocatalytic reduction of CO2 to (a)CO using a glassy carbon electrodemodified with a cobalt(II) chlorin
N
NCo
complex (CoII(Ch), Fig. 1 (a))[1]NN
adsorbed on multi-walled carbon
nanotubes (MWCNTs) in water.[2] InO
addition,
wehaveexamined
O OMe
photocatalytic reduction of CO2 toFig. 1 (a) Structure of CoII(Ch) and (b) schematic image of
CO with CoII(Ch) adsorbed on
CoII(Ch) on MWCNTs
MWCNTs as a catalyst.	
  
A CoII(Ch)-modified electrode was prepared by drop casting a sonicated acetonitrile(MeCN) solution containing CoII(Ch) (1.0 mM), MWCNTs (1.3 mg) as a support material
and 5% Nafion (12 µL) as a proton exchange membrane and stabilization agent of CoII(Ch)on MWCNTs to a glassy carbon electrode. Controlled-potential electrolysis of a CO2saturated aqueous solution was performed and the formation of CO and H2 was confirmed.
The Faradaic efficiency at pH 4.6 was 89% for CO production under applied potential at –1.1
V vs. NHE with H2 production accounting for the remaining 11%. No CO formation in theelectrolysis was observed without MWCNTs or CoII(Ch). An EPR spectrum of a frozen
MeCN solution containing CoII(Ch) on MWCNTs exhibited a signal at g = 4.203. The g =4.203 signal is a triplet marker of two molecules of cobalt(II) complexes (S = 1/2) locatedclose to each other. When MWCNTs were replaced by reduced graphene oxide (rGO), whichis planar, as a support material of CoII(Ch), the CO yield became much smaller. These results
indicate that the three dimensional assembly of MWCNTs with CoII(Ch) (Fig. 2 (b)) provides
a suitable hydrophobic environment for binding of CO2 instead of proton and the proximity of
two CoII(Ch). Such situations may not be attained by a large two-dimensional π-system suchas rGO. Photoirradiation (λ > 420 nm) of a CO2-saturated MeCN (5% water) solution
containing CoII(Ch) adsorbed on MWCNTs, [RuII(Me2phen)3]2+ (Me2Phen = 4,7-dimethyl1,10-phenanthroline) as a photocatalyst and triethylamine as a sacrificial reductant resulted in
CO evolution.
O

N
N

N
N

N

M

e

O

N N

O

N
N Co NN- 121 - 121 -N

O[1] Mase, K.; Ohkubo, K.; Fukuzumi, S. J. Am. Chem. Soc. 2013, 135, 2800.
[2] Aoi, S.; Mase, K.; Ohkubo, K. Chem. Commun. 2015, 51, 10226.
Corresponding Author: S. Fukuzumi, Tel: +81-6-6879-7369, Fax: +81-6-6879-7370
E-mail: fukuzumi@chem.eng.osaka-u.ac.jp	
  

N

OMe

O

o

N

O

e

M

O

C

o

Co

N
N

N

O

O

O

e

M

O

N

e

O

N
N

C

N Co
N

O

N
N

Co

OM

O

MeO

O

3P-9
Enhanced Thermoelectric Properties of Single-walled Carbon Nanotubes
with Ionic Liquid-Derived Polymers○Motohiro Nakano, Yoshiyuki Nonoguchi, Takuya Nakashima, Tsuyoshi Kawai
Graduate School of Materials Science, Nara Institute of Science and Technology,
Nara 630-0192, Japan
Single-walled Carbon Nanotubes (SWNTs) are low-dimensional materials exhibiting
relatively high conductivity and are thus promising candidates for thermoelectric materials. In
the low-dimensional materials such as SWNTs, the electric density of state (DOS) at the
Fermi level becomes narrower with decrease in size and dimensionality, which leads to an
enhancement in thermoelectricity. [1] In the previous study, we focused on the dispersion of
SWNTs using ionic liquids (ILs) [2] to enhance their thermoelectric properties. The composite
containing individually-isolated SWNTs in ionic polymers exhibited the Seebeck coefficient
up to 150 V/K, which is comparable to those of a single semiconducting SWNT. We here
demonstrate the remarkable thermoelectric properties of SWNT composites with cationicpolymers, providing an efficient strategy to enhance the thermoelectric power of SWNT
materials.
The composites were prepared by
infiltrating cationic methacrylates into
SWNT buckypapers, followed by theradicalpolymerization
fortheIL-derived polymers (PILs) (Fig. 1).
Fig. 1: Molecular structures of PILs and corresponding
Theelectricalconductivity
wasmonomer. TFSI: bis(trifluoro methanesulfonyl) imide.
enhanced from 550 S/cm to 1100 S/cm
as the loading level of PILs increased to ~30 wt%. SWNT/PIL composites showed a 1.7-foldincrease in the Seebeck coefficients compared to those of SWNT buckypapers. The uniquesimultaneous improvement of electrical conductivity and Seebeck coefficient led theremarkable thermoelectric power factor over 500 W/mK2. There was no significant change
in thermoelectric properties when methanol or methanol/AIBN were added to SWNT
buckypapers.
We attributed the enhancement in the Seebeck coefficient to the partial dispersion of
SWNTs filled in ILs. PILs can easily contact with the SWNTs surface because of a porous
structure of the buckypapers. Majumdar et al. reported that, as a bundle became thinner, theSeebeck coefficient of the fiber became larger. [3] This previous report agreed to our resultsthat partial SWNT exfoliation leads to an enhancement in the Seebeck coefficient of the bulk
film. Another possible explanation may also arise from the appropriate insertion of organic
compounds at the inter-SWNT junctions. When the diameter of SWNT bundles becomes
smaller, the density of point sections between SWNTs are expected to increase, resulting in an
increase in electrical conductivity. [4][1] N. F. Mott et al., Phys. Rev. 131, 1336 (1969).
[2] T. Aida et al., Science 300, 2072 (2003).
[3] A. Majumdar et al., J. Heat Transfer. 125, 881 (2003).
[4] K. Suemori et al., Appl. Phys. Lett. 106, 113902 (2015).
Corresponding Author: Y. Nonoguchi
Tel: +81-743-72-6028
E-mail: nonoguchi@ms.naist.jp- 122 - 122 -3P-10High performance micro-supercapacitors with carbon nanotubes andflexible components○Fumiaki Tanaka1, Atsuko Sekiguchi2, Karolina U. Laszczyk1, Kazufumi Kobashi2,
Shunsuke Sakurai2, Don N. Futaba2, Takeo Yamada2, Kenji Hata2
1

Technology Research Association for Single Wall Carbon Nanotubes (TASC), Tsukuba
305-8565, Japan
2
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565,
Japan

Micro-supercapacitors are attracting increasing attention as integratable energy devices ona silicon substrate, possessing safety, long cycle lifetimes, and high power density. Recently,
our group succeeded in developing high-performance micro-supercapacitors [1], where longand pure single-walled carbon nanotubes (SWCNTs), synthesized by “Super-growth” method[2], were utilized as electrodes.
Here, to broaden their potential applications (in particular, to flexible electronics), we
developed a reliable and stable fabrication process for high-performancemicro-supercapacitors with SWCNTs and flexible components. To achieve this, we utilized
Super-growth SWCNTs as electrodes and fillers for flexible current collectors.
As shown in Fig. 1, CNT micro-supercapacitors were designed as in-plane interdigital
shapes and successfully fabricated with flexible current collectors (composite of
SWCNT-fluorinated elastomer) on a flexible substrate (fluorinated elastomer). The
performance of our device was evaluated through typical electrochemical analyses. Owing to
the high specific surface area and electrical conductivity of SWCNT network, high volumetriccapacitance and energy and power densities were achieved. When comparing the energy andpower densities of our device with those of previously reported flexible micro-supercapacitors[3-6], our devices revealed nearly top-level performances, keeping flexibility and outstanding
mechanical durability. These results prove our device could be stably fabricated with flexible
components, broadening their potential applications such as energy devices for flexible
electronics.
This presentation is based on results obtained
from a project commissioned by the New
Energy and Industrial Technology Development
Organization (NEDO).
[1] K. U. Laszczyk et al., Adv. Energy Mater., doi:
10.1002/aenm.201500741 (2015).
[2] K. Hata et al., Science 306, 1362 (2004).
[3] M. El-Kady and R. Kaner, Nat. Commun. 4 1475
(2013).
[4] D. Kim et al., ACS Nano 7 7975 (2013).
[5] B. Lim et al., ACS Nano 8 11639 (2014).
[6] S. Hong et al., ACS Nano 8 8844 (2014).
Corresponding Author: A. Sekiguchi
Tel: +81-29-861-4611, Fax: +81-29-861-4851,
E-mail: atsuko-sekiguchi@aist.go.jp

Fig. 1: Photograph and schematic illustration of CNT
micro-supercapacitors with flexible components.

- 123 - 123 -3P-11A durable Pt electrocatalyst with high performance based onpoly(para-pyridine benzimidazole)-wrapped carbon nanotubes*1,2

Zehui Yang1, Tomohiro Shiraki1, Tsuyohiko Fujigaya1,2 and Naotoshi Nakashima
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Reference[1] N. Nakashima et al. J. Mater. Chem. A, 2015, 3, 14318-14324.
Corresponding Author: N. Nakashima
Tel: 092-802-2840, Fax: 092-802-2840,
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 124 - 124 -Power Density/ mW cm -2

performance was ~4-times higher due to the higher
proton conductivity.

Potential/ V

Polymer electrolyte fuel cells (PEFCs) are considered as promising, reliable and sustainablenext-generation energy source for stationary and portable power applications due to highenergy conversion, high power density and zero-pollution under the operation of hydrogen asfuel in that the byproduct is water.
To make the most use of the Pt and reduce the Pt consumption, Pt is loaded on carbon
supporting materials. However, the conventional electrocatalyst, CB/Pt, suffers from the low
durability and performance in terms of fast carbon corrosion and Pt migration and dissolution.
Compared to the conventional CB, multi-walled carbon nanotubes (MWNTs) arerecognized as a promising candidate for carbon supporting materials due to higher electricalconductivity, higher chemical stability, and lower impurities.
Here, we utilized poly[2,2’-(2,5-pyridine)-5,5’-bibenzimidazole] (para-PyPBI， Figure 1a)to disperse MWNTs and deposited Pt-NPs on the MWNTs/para-PyPBI. Based on ourprevious unique doping system, in(a)which the electrocatalyst was dopedwith some polymer or molecularshowed higher power density due to the(b)introduction of ionomer to catalyst
H3PO4
Pt
para-PyPBI
layer, the obtained electrocatalyst wasdoped with PA shown in Fig. 1b.
Meanwhile, the PA-doped para-PyPBI
MWNTs/p-PyPBI MWNTs/p-PyPBI/Pt MWNTs/p-PyPBI-PA/Pt
MWNTs
membrane was utilized to identicallyFigure 1 (a) The chemical structure of para-PyPBI. (b) Procedure of preparation
sandwich the membrane electrode of PA doped electrocatalyst.
assembly (MEA) with PA-doped
electrocatalyst and membrane. The durability and FC performance were investigated.
As shown in Figure 2, the MWNTs/para-PyPBI-PA/Pt shows the highest power density of
414 mW cm-2, which was ~2 times that of the non-doped electrocatalyst (208 mW cm-2).
Compared to our previous PBI system, the fuel cell
500
1
0.8

400

0.6

300

0.4

200

0.2

100

0

0

0.5

1

1.5

Current Density / A cm

2

0

-2

Figure 2. Polarization of I-V and power density
curves of the different MEAs at 120 oC for the
CB/Pt (black), MWNTs/para-PyPBI/Pt (blue) and
MWNTs/para-PyPBI-PA/Pt (red).

3P-12A very high methanol tolerant cathodic electrocatalyst for direct methanol
fuel cell based on a polymer wrapped method
Zehui Yang1, Tomohiro Shiraki1 and Naotoshi Nakashima* 1,2

1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

Direct methanol fuel cells (DMFCs) are recognized as an ideal power source for mobile
applications and have received considerable attention. One main issue affecting the efficiency
and power density of the DMFCs is methanol crossover, because methanol can easily go
through a Nafion membrane and be oxidized at the cathode, poisoning the electrocatalyst anddegrading the FC voltage and power density; especially when a high concentration of
methanol is fed to the anode side. Thus, the design of a new electrocatalyst with a methanol
tolerance on the cathode side of the DMFCs is significantly required.
We here present the third trial for this issue (methanol tolerance) that shows a much higher
performance than previous methods as well as an easy preparation based on a“polymer-coating” method as shown in Figure 1. We have reported that the electrocatalyst
coated with PVPA showed an enhancement in its fuel cell durability and blocked methanol
absorption on the active Pt nanoparticles (Pt-NPs), which are important parameters for thecathode side of the DMFC. In this study, we describe the results that after coating with apolymer, the electrocatalyst showed a very high methanol tolerance.
(a)

PyPBI wrapping

MWNTs

Pt loading

MWNT/PyPBI

PVPA coating

MWNT/PyPBI/Pt

MWNT/PyPBI/Pt/PVPA

Figure 1 Schematic illustration for the preparation of the MWNT/PyPBI/Pt/PVPA.
Compared to a non-coated electrocatalyst, the polymer coated electrocatalyst showed an~3.3 times higher oxygen reduction reaction activity compared to that of the commercial
CB/Pt and methanol tolerance in the presence of methanol to the electrolyte due to a 50%
decreased methanol adsorption on the Pt after coating with the PVPA.
Reference[1] N. Nakashima et al. Sci Rep., 2015, 5, art no. 12236.
Corresponding Author: N. Nakashima
Tel: 092-802-2840, Fax: 092-802-2840,
E-mail: nakashima-tcm@mail.cstm.kyushu-u.ac.jp- 125 - 125 -3P-13Channel length dependence of characteristic variations
in carbon nanotube thin-film transistors○Jun Hirotani1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
2
EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan

Carbon nanotubes (CNTs) have been widely recognized as a promising material for various
electron device applications because of their remarkable electrical and mechanical properties.
CNT thin-film transistors (TFTs) are advantageous in simple and mass fabrication on various
kinds of substrates including flexible plastic films. Therefore, CNT TFTs are promising active
components for flexible and wearable devices. Though great efforts have been made to achieve
medium-scale integrated circuits [1] and high-performance CNT TFTs [2], the large dispersion
in their characteristics is still one of remaining issues for practical applications such as signal
processing and active matrix for displays. We previously reported statistical investigation on
characteristic variations for CNT TFTs with a channel length of 100 Pm [3]. In this work,
similar works have been carried out for devices with shorter channel length from 5 to 30 Pm
with the aim for obtaining higher current driving ability. Purified semiconducting single-walled
CNTs were used to as the channel material. Schematic and optical micrographs of back-gate
CNT TFTs fabricated on a SiO2/Si substrate are shown in Fig. 1. More than 3000 CNT TFTs
were measured to investigate statistically on-current, on/off ratio, and mobility for CNT TFTs
with various channel lengths.
As the channel length decreased, thedevice-to-device dispersion in device
characteristics increased. There weresome CNT TFTs with degraded on/off
ratio. This trade-off between on-current
and on/off ratio was significant for shortchannel devices. The degradation of
on/off ratio is probably due to bundled
CNTs causing leakage current flowing
through the inner CNTs at off-state.
Acknowledgements: The semiconducting
SWNTs were provided by TASC. This
work was partially supported by Grant-inAid by MEXT, JST/SICORP, and
JST/ALCA.

Figure. Schematic and optical images of CNT TFT and

SEM image of CNT network.
[1] Q. Cao et al., Nature 454, 495 (2008).
[2] D.-M. Sun et al., Nature Nanotechnol. 6, 156 (2011).
[3] J. Hirotani et al., The 48th FNTG symposium, 3P-12
Corresponding Author: Yutaka Ohno
Tel & Fax: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 126 - 126 -3P-14
Effect of Free Electron Laser Irradiation on the Chirality of
In-Plane Oriented Single-Walled Carbon Nanotubes○Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya,
Tomoko Nagata, Nobuyuki Iwata and Hiroshi Yamamoto
College of Science & Technology, Nihon University
7-24-1 Narashinodai, Funabashi, Chiba 274-8501 Japan
Single-walled carbon nanotube (SWNT) has many advantages for application, such as highelectric conductivity, high allowable current density and mechanical strength. On the other
hand, SWNTs can be both metal and semiconductor, depending on their chirality. Thus thecontrol of the chirality is required for the application. The in-plane orientation of the
SWNTs is also essential for the electric devices. We have succeeded in obtaining all
semiconductive SWNTs having random directions by irradiation of free electron laser (FEL)
during growing process [1]. The irradiation of FEL may enhance the growth of SWNTs
having specific bandgap, which corresponds to the photon energy of the FEL. In thispresentation, we report the simultaneous control of the chirality and in-plane orientation.
The SWNTs were grown by alcohol catalyst chemical vapor deposition (ACCVD) method.
Co/Fe nano-particles were deposited on ST-cut quartz substrate by evaporation as the catalyst.
The 800 nm FEL was irradiated during growth. Figure 1(a) shows the surface image
obtained by dynamic force microscopy (DFM). The SWNTs were well-aligned along the[100] direction. Figure 1(b) shows the Raman spectra of the SWNTs grown with 800 nm
FEL (thick solid line) and without FEL (solid line). The observed radial breathing mode(RBM) without the FEL indicated the growth of SWNTs with the diameter of 1.07 nm (◎)
and 1.59 nm (●) using 532 and 785 nm excitation laser. With 800 nm FEL irradiation, theobserved RBM indicated the growth of diameter of about 1.59 nm (▲) and 1.07 nm (△)
using only 785 nm excitation laser. Bandgap corresponding to the energy of FEL. The
details will be reported in the poster.
(a)

(b)

Fig. 1 (a) DFM image 5 µm× 5 µm and (b) Raman spectra. Used excitation lasers were 785 nm, 632 nm,
532 nm and 441 nm. The notation of △ and ▲ mean with FEL RBM peaks, ● and ◎ mean without
FEL RBM peaks. △ symbols indicate semiconductor. ▲, ● and ◎ symbols indicate metal. Dotted line
indicate substrate peaks.
[1] K. Sakai et al. IEICE Trans. Electron. E94-C, 1861 (2011)
Corresponding Author: Nobuyuki Iwata
Tel: +81-47-469-5457, Fax: +81-47-469-5457,
E-mail: iwata.nobuyuki@nihon-u.ac.jp- 127 - 127 -3P-15Single-Walled Carbon Nanotube Synthesis using Al2Ox/Pd/Al2Ox
multilayer catalyst by alcohol Gas Source Method in High VacuumHoshimitsu Kiribayashi , Akinari Kozawa , Seigo Ogawa , Takahiro Saida ,
1

1

1

2

Shigeya Naritsuka1 and Takahiro Maruyama1,2
1

Department of Materials Science and Engineering, Meijo University, Aichi 468-8502, Japan2

Department of Applied Chemistry, Meijo University, Aichi 468-8502, JapanIntensity [a.u.]Single-walled carbon nanotubes (SWNTs) are anticipated to be applied to the field ofelectronics. For application to LSI device process, it is necessary to grow SWNTs at low
temperature and under high vacuum. Previously, using Pt catalysts, we reported SWNT
growth in a high vacuum, however, the yield below 700C was not high[1]. In this study,
we used Pd as a catalyst for low temperature growth.
Using rf-sputtering and electron beam depositions, Al2Ox/Pd/Al2Ox structures wereformed on SiO (100nm)/Si substrates. SWNT growth was carried out on them using thealcohol gas source method. The grown SWNTs were characterized by SEM, TEM, andRaman spectroscopy.
Figure 1 shows RBM region of Raman spectra forthe samples which were grown at 500ºC. When theethanol pressures were 1×10-4 ~ 1×10-3 Pa, both Gband and RBM peaks were observed in Raman spectra,
indicating that SWNTs grew even at low temperature.
From the wavenumbers of RBM peaks, SWNT
diameters were estimated to be distributed between 1.2
and 1.8 nm. Figure 2 shows a TEM image of thesample grown at 500ºC. It was found that most of Pd
catalyst particle sizes were smaller than 2nm, which
Figure 2 Raman spectra
would lead to SWNT growth. Our results showed that
SWNTs grow from Pd catalysts by optimizing theethanol pressure during the CVD growth.

 H. Kondo et al. J. Nanotechnol. 2012 (2012) 690304.
Corresponding Author: T. Maruyama
Tel: +81-52-838-2386, Fax: +81-52-832-1179,
E-mail: takamaru@meijo-u.ac.jp


2nm
Figure 2 TEM image

- 128 - 128 -3P-16
Water-assisted burning of metallic single-walled carbon nanotubes
triggered by Joule heating or field-emission electron○Keigo Otsuka1, Yuuki Shimomura1, Taiki Inoue1, Shohei Chiashi1, Shigeo Maruyama1,2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy NanoEngineering Lab. National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki. 305-8564, Japan

Despite ideal properties of semiconducting (s-) single-walled carbon nanotubes (SWNTs)
as channel materials of field-effect transistors (FETs), selective growth techniques have notattained a required purity of s-SWNTs. Hence, selective removal of metallic (m-) SWNTs
after lattice-oriented growth is necessary to create densely-packed s-SWNT arrays for logic
circuit application. We recently reported organic film-assisted electrical breakdown [1] as atool to burn full-length of m-SWNTs, but burning length widely varied among an SWNT
array, also depending on seasons. Here, we investigated the effect of water vapor pressure on
the burning length, and discussed SWNT re-burning initiated by field-emission electron after
nanogap formation, which resulted in half-length burning.
Horizontally-aligned SWNTs grown on crystal quartz werein PMMA film
20
transferred onto SiO2/Si substrates, followed by photolithoWet oxygen (O /H O)
graphically-defined metal electrode deposition and PMMA thin
LB= 4.83 μm
10film coating (~50 nm). A drain voltage was ramped up from 0 V
until all m-SWNTs were broken, while positive gate voltage was0
applied. This process was performed in ambient air or oxygen
Ambient air
20
saturated with water vapor (wet oxygen). Histograms of SWNT
LB= 0.82 μm
10burning length (LB) obtained in both condition (Fig. 1) indicatethat SWNT burning was highly enhanced by water vapor.
0
0
2
4
6
8
Therefore the burning length variation depending on the seasonsRemovedLength(μm)(µm)
Burning lengthand the weather can be explained as the result of humidity change
Fig.1: Histogram of SWNTof ambient air.
burning length, performed in
Focusing on a broad peak at ~3.5 μm denoted by an arrow in wet oxygen (upper) or
Fig. 1 and the fact that more SWNTs remained near cathode ambient air (lower).
metal electrodes, we studied field-induced gap extension of
SWNTs [2]. After SWNT gaps were fabricated by conventional(a)wet oxygen
electrical breakdown [3], voltage was further applied in PMMA
4films. Figure 2a shows applied voltage vs. gap size extended in2
pure oxygen or wet oxygen. While the gaps were slightly
extended in pure oxygen depending on voltage, the SWNTs on
Pure oxygen0
anode side to the gaps were completely burned out in wet oxygen,
initial
20 40 60 80 100
Applied Voltage (V)probably ignited by field-emission electron (Fig. 2b) after first(b)voltage application (40 V). This re-burning phenomenon from
2 μm
the gaps might also occur in the experiment shown in Fig. 1 andGap formation
result in the broad peak at the center.
gap
2

Gap size (µm)

full-length

Counts2[1] K. Otsuka et al., Nanoscale 8, 8831 (2014).
[2] K. Otsuka et al., The 48th FNTG general symposium, 1P-11 (2015)[3] P. G. Collins et al., Science 292, 706 (2001).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 129 - 129 -Re-burning

Fig. 2: (a) Applied voltage
vs. gap size, performed inpure oxygen or wet oxygen.
(b) SEM image of are-burned SWNT.

3P-17
Local structure and properties of the alkali halide crystals encapsulated insingle-walled carbon nanotubes studied by molecular dynamics simulations
and solid-state NMR spectroscopy○Eita Yokokura 1, Yosuke Kataoka 1 and Hironori Ogata1,2
23Graduate School of Engineering, Hosei University, Koganei, 184-8584, Japan
Research Center for Micro-Nano Technology, Hosei University, Koganei, 184-0003, Japan

Single-walled carbon nanotubes (SWNTs) have a hollow space in the nanometer size that canbe encapsulated various functional molecules. The conﬁned molecular assemblies may exhibit
unique low-dimensional structures and solid state properties that can not be realized in the bulk.
Synthesis and structure of alkali halide encapsulated SWNTs have been reported [1-2].
However, the systematic studies of tube diameter dependence, chirality dependence andtemperature dependence on the local structure and properties (ionic conductivity, melting pointetc.) of alkali halides encapsulated SWNTs have not been reported. In this study, we report theeffects of the diameter and chirality of SWNTs on the local structures of the encapsulated
alkali halides including temperature dependence by using molecular dynamics (MD)simulations.
In the MD simulation, we used the Born-Mayer-Huggins-Tosi-Fumi intermolecular potential
between the alkali halide ions and the Dreiding potential between carbon atoms in SWNT. One
SWNT and any number of alkali halide ion pairs(Cs-I, K-I) around SWNT were set in arectangular cell as initial configuration. Stable structure at 300 K was calculated with the NVT
ensemble after the relaxation calculation at 1000 K. Stable structures was calculated to raise
the temperature by 20 K from 300 K to 1000 K. The detailed results on the local structures of
encapsulated KI or CsI crystals and the values of the melting points will be presented.
In addition, their experimental results obtained by TEM and solid-state NMR spectroscopy
will be also presented.

References:[1] J. Sloan, M.C. Novotny, Chem. Phys. Lett., 329 (2000)61.
[2] M. Wilson, P.A. Madden, J. Am. Chem. Soc., 123 (2001)2101.
[3] Ryosuke Senga, Hannu-Pekka Komsa, Zheng Liu, Kaori Hirose-Takai, Arkady V. Krasheninnikov and Kazu
Suenaga, Nature Materials,13(2014)1050.
Corresponding Author: H. Ogata Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp- 130 - 130 -3P-18
Molecular structure of chalcogen encapsulated in single-walled carbon
nanotubes studied by molecular dynamics simulations(II)○1Yutaka Sato, 2Yousuke Kataoka, and 1,2,3Hironori Ogata
Graduate School of Science and Engineering, Hosei University, Koganei 184-8584, Japan
Department of Faculty of Bioscience and Applied Chemistry, Hosei University, Koganei,
184-8584, Japan
3
Research Center for Micro-Nano Technology, Hosei University, Koganei 184-0003, Japan

1

2

Single-walled carbon nanotubes(SWNTs) have a hollow space in the nanometer size that canbe encapsulated various functional molecules. Recently, sulfur and selenium encapsulated
DWNTs are synthesized and one-dimensional conductive sulfur chain structure anddouble-helices selenium structure were reported, respectively. In this study, we report theeffects of chirality and tube diameter of SWNTs on the local structure and molecular mobilityof the chalcogen by using molecular dynamics(MD) simulations.
In our MD simulations using scigressVer2.6.1(Fujitsu). We applied the GEAR method of thefifth order in the numerical integration method and the speed scaling method in thetemperature control method. By placing the CNT and arbitrary number of slufur atoms or
selenium atoms in rectangular cell, and using NTV ensemble. First, we went the relaxation
calculated at 1K. Then, the temperature was raised to 800K. Finally, the temperature waslowered to 297K, I got a stable structure.
Figure1 shows the structure of sulfur encapsulated in (a) (7,0) and (b) (6,6) carbon nanotubes
at 298K. Sulfur encapsulated in SWNT shows one-dimensional linear or zig-zag chain
structure depending on the tube diameter. Figure2 shows the chairal vector dependence of
second-neighbor peaks of S – S pair correlation functions at room temperature. Detailed
results on the encapsulated sulfer structures will be presented.
(a)

(b)

[1] Toshihiko Fujimori et al. Nature Communications4(2013)2162.
[2]Frank H.Stillinger et al. J.Phys.Chem85, 6460 (1986)[3]Frank H.Stillinger et al. J.Phys.Chem.1987, 91 (19), pp4899-4907- 131 - 131 -3P-19In situ SEM/STM observations of monolayer graphene growth on SiC(0001) wide terraces○Chenxing Wang, Hitoshi Nakahara, Koji Asaka, and Yahachi Saito
Department of Quantum Engineering, Nagoya University, Furo-cho, Nagoya 464-8603, Japan

High quality epitaxial few layer graphene has been formed by thermal decomposition of
SiC due to sublimation of Si atoms during heat treatment. However, morphology of SiC
substrate surfaces after graphene growth is complicated and depends on the annealing
conditions. Several divergent growth models had been proposed in previous studies [1, 2, 3],
which still confused us. Especially, we noticed that a fingerlike buffer layer usually remains
during monolayer graphene forming from step edges,
which may prevent graphene from growing with large
size on terraces. V. Borovikov et al. [3] explained suchphenomenon as the result of a curvature driven
mechanism for step edge stability.
In this work, in order to have a better knowledge ofgraphene growth processes on SiC surface, different
stages of graphene growth processes on 6H-SiC (0001)
on-axis substrates at various anneal conditions wereobserved by in situ SEM/STM. We succeed inrecording the growth process of monolayer graphenefrom step edges without forming pits on wide terraces.
Fig.1 shows SEM images of monolayer graphene
growth process from step edges at the same portion of Figure 1 A series of SEM images of
SiC surface, which was heated at 1550ºC for 90 min in graphene growth at 1550 Cº .
1-atm-Ar atmosphere. Graphene firstly formed fromstep edges uniformly (fig.1a), and then a fingerlike
morphology of buffer layer remained when graphene
growing to terraces (Fig. 1b). After that, fingers shrankand disappeared when the front of graphene reachednext step (Fig. 1c, d). Such observations are against thedescription of fingerlike morphology in previous study[3]. In addition, monolayer graphene grown from thesame step edge likely formed in one domain,
confirmed by STM images. Fig.2 shows a highresolution STM image of monolayer graphene. Clear
Moiré pattern was observed in graphene area (fig.3
insert) and no boundary was detected.
[1] P. Sutter, Nat. Mater. 8 (2009) 171-172.
[2] C. Held et al., Beilstein J. Nanotechnol. 3 (2012) 179–185.
[3] V. Borovikov et al., Phys. Rev. B 80 (2009) 121406.
Corresponding Author: Chenxing Wang
Tel: +81-52-789-4464, Fax: +81-52-789-3703,
E-mail: cx-wang@surf.nuqe.nagoya-u.ac.jp- 132 - 132 -Figure 2 STM image of monolayer
graphene formed from step edge
(800×800 nm). The insert is an enlarged
image (50×50 nm) of graphene area.

3P-20
Visualization of Grain Structure of Polycrystalline Grapheneby Transition Metal Dichalcogenide○Satoru Fukamachi,1 Hiroko Endo,1 Rozan Mohamad Yunus,2Masaharu Tsuji,1,2 and Hiroki Ago1,2,3
1

Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580
2Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580
3
PRESTO-JST, Saitama 332-0012

Recently, large-area graphene sheets synthesized by CVD on Cu catalyst have been widelyused for many practical applications. However, the CVD-grown single-layer graphene ispolycrystalline with many grain boundaries (GBs), and the presence of GBs deteriorates thephysical properties of graphene by reducing its carrier mobility and mechanical strength.
Therefore, the visualization of the grain structure of graphene is important, and several
methods, such as TEM and low-energy electron microscope (LEEM), have been used toanalyze the grain structure [1,2]. However, TEM requires the graphene transfer process on a
TEM grid, while LEEM can measure only on metallic substrates.
In this presentation, we demonstrate a novel method to visualize the grain structure of
CVD-grown polycrystalline graphene by the post-growth of transition metal dichalcogenides.
Recently, we reported the epitaxial CVD growth of MoS2 on graphene, in which theorientation of triangular MoS2 grains is well matched with the hexagonal lattice of underlying
graphene [3]. By utilizing this relationship,25
we succeeded in visualizing the grain structureof polycrystalline graphene (synthesized on
Cu foil) from the orientation of MoS2 grains,
as shown in Figure 1 [4]. Moreover, thismethod can be applied to graphene transistors
fabricated on Si wafers, which revealed the0multi-grain structure in the graphene channels.

6

52

Furthermore, we could observe the GBs,
because MoS2 tends to nucleate along the GBs.
Our finding offers a facile and transfer-freelabeling technique that can be applied tovarious two-dimensional materials.

10

20

10 m

Figure 1 Grain structure of the graphene determinedfrom the orientation of MoS2 grains. The angles
show the relative orientation with respect to thewhite grain.

References: [1] Huang, P. Y. et al. Nature 469, 389 (2011). [2] Ogawa, Y. et al. Nanoscale 6, 7288 (2012).

[3] Ago, H. et al. ACS Appl. Mater. Interfaces 7, 5265 (2015). [4] H. Ago et al. to be submitted.
Corresponding Author: Hiroki Ago (Tel&Fax: +81-92-583-7817, E-mail: ago@cm.kyushu-u.ac.jp)- 133 - 133 -3P-21Polymer-free transfer of CVD graphene to boron nitride substrates○Miho Fujihara1, Shun Ogawa2, Ryosuke Inoue2, Yutaka Maniwa2, Kenji Watanabe3,
Takashi Taniguchi3, Hisanori Shinohara1, Yasumitsu Miyata2,4
12Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
3
National Institute for Materials Science, Tsukuba 305-0044, Japan
4
JST, PRESTO, Kawaguchi, 332-0012, Japan

Hexagonal boron nitride (hBN) has been widely used as a substrate for graphene because
the carrier mobility of graphene can be drastically enhanced on hBN.[1] Usually, suchgraphene/hBN heterostructures are prepared by transferring graphene onto hBN flakes. For
exfoliated graphene, all the processes are conducted without solution treatment, and thus,
clean samples can be obtained. In contrast, for graphene grown by chemical vapor deposition(CVD), conventional transfer process requires polymer coating to support graphene during
wet etching of metal substrates. However, the complete cleaning of polymer coated is quitedifficult and the remaining polymer residues degrade carrier transport properties of graphene.
It is, therefore, highly desired to develop a method for clean, controlled transfer of CVD
graphene on hBN.
In this work, we have developed the polymer-free transfer method of CVD graphene ontohBN. CVD Graphene on Cu foil was fixed on the small hBN flakes directly, and then Cu foil
was etched with iron nitride solution. Atomic force microscope observations reveal that thegraphene obtained by the present method has highly clean surface compared to the samples ofpolymer-assisted method (Fig.1a,b). Unlike the polymer-transfer sample, the electric double
layer transistors of the present samples exhibit symmetric curves and the disappearance ofhysteresis in Id-Vgs characteristics (Fig. 1c). These results indicate the suppression of carrier
scattering and impurity levels in the polymer-free samples. The present method provides asimple and effective way to prepare clean heterostructures of graphene and other two
dimensional materials.

Fig.1: AFM images of graphene transferred on hBN by (a) conventional polymer-assisted method and (b)polymer-free method. (c) Id-Vgs curves of the electric double layer transistors of these samples.
[1] C. R. Dean et al. Nat. Nanotech. 5, 722 (2010).
Corresponding Authors: Y. Miyata, H. Shinohara
Tel:+81-42-677-2508, +81-52-789-2482, E-mail:ymiyata@tmu.ac.jp, noris@nagoya-u.jp- 134 - 134 -3P-22
Study of direct growth mechanism of multi-layer grapheneby precipitation method using W capping layer○Jumpei Yamada1, Yuki Ueda1, Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University,
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Because of its superior characteristics, graphene is highly expected to apply invarious fields, such as electrical wiring, transparent electrodes. Graphene isusually grown by CVD method using Cu or Ni as a catalyst. However, the transfer
process of the graphene makes it not suitable to the mass production of devices.
Recently, a direct growth of graphene on a substrate has been often studied as analternative method for the transfer process. We have been studying the
precipitation method for forming high-quality multilayer graphene [1] and havesucceeded in the direct growth of multilayer graphene using a W capping layer. In
this paper, the annealing temperature and time is varied to study the mechanism of direct
growth of graphene by precipitation method using W capping layer.
W(25nm) / Ni(300nm) / a-C(5nm) layers deposited on a sapphire substrateusing electron-beam deposition were prepared as the samples. These wereannealed by changing annealing temperature from 700 to 900 oC for 30min in
vacuum. The annealing time was also varied from 1 to 60 minutes for theannealing at 900 oC.
The Raman spectra in Fig.1 show that the D peak intensity decreased withincreasing the annealing temperature while no conspicuous difference wasobserved on the Raman spectra of various annealing time in Fig.2. The result
suggests that the major part of graphene precipitated during the cooling process
after the annealing. Therefore, the annealing temperature only effects the quality
and the thickness of the precipitated graphene.

Fig.1 Raman spectra for annealing

Fig.2 Raman spectrum fortemperature dependence.

annealing time dependence.

Reference: [1] Jumpei Yamada et al., MRS spring Meeting & Exhibit., (2015) T14.03.
Acknowledgement: This work was supported in part by JSPS KAKENHI Grant Numbers 2660089, 15H03558,
26105002, 25000011.
Corresponding Author: J.Yamada E-mail:jjjjjjyyyyyy119@gmail.com- 135 - 135 -3P-23Edge-Disorder Engineering on Thermoelectric Performance ofGraphene Nanoribbons: Theoretical and Computational Prediction○Tetsumi Izawa, Kengo Takashima, Takahiro Yamamoto
Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
Since waste heat occupies about 66 % in total primary energy, we have increasingly
paid attention to importance of waste heat. Nearly 70 % of the entire waste heat is below 200
degrees Celsius and dispersed. Large-scale equipment such as heat engines are not proper forrecycling low-temperature waste heat. Thermoelectric materials can convert useless lowtemperature waste heat into useful electrical energy anywhere. Thermoelectricity technology
contributes to energy harvesting for achieving IoT (Internet of Things).
Existing thermoelectric materials generally consist of rare metals, are toxic andfragile. Graphene nanoribbons (GNRs), a single-layered graphene in the shape of ananometer-width ribbon, will solve the all problems. Moreover, due to high electricalconductivity and large Seebeck coefficient, GNRs are expected to be a candidate for a new
thermoelectric material. However, thermoelectric efficiency of GNRs is suppressed by highthermal conductivity. To reduce the thermal conductivity without reduction of thermoelectric
power factor (PF), we have proposed to introduce edge disorder into GNRs (ED-GNRs).
In this study, we have theoretically investigated PF of sub-micrometer ED-GNRs
with various concentrations of edge disorder using the non-equilibrium Green’s function
method combined with the Tight-Binding method.
A right figure shows ribbon-length
dependence of room-temperature PF of
Edge-disorderzigzag-edged GNRs (ZGNRs) with various
Concentrations
edge-disorder concentrations at Fermi
energy. We found that PF of ED-GNRs
increase in the presence of the edgedisorder compared with pristine. The
maximum value of PF in 10 % edgedisorder concentration at 97 nm is almost
250 μW/(cm･K2) that is 5 times larger thanthat of pristine, indicating that enoughthermoelectric ability is realized by EDGNRs. Furthermore, in 20 and 30 % edge- Fig. Length dependence of room-temperature PF ofZGNRs with various edge-disorder concentrations
disorder concentrations each PF has a
at Fermi energy
maximum value at a certain ribbon length.
Edge-disorder concentrations give an optimum ribbon length for PF of ZGNRs. Thus,
controlling edge-disorder concentrations enables us to enhance thermoelectric performance of
GNRs.
Corresponding Author: T. Yamamoto
Tel: +81-03-5876-1717, Fax: +81-03-5876-1717
E-mail: takahiro@rs.tus.ac.jp- 136 - 136 -3P-24
CVD Growth of MoS2-Graphene Nanoribbon Heterostructures and High
Gain Photodetectors○Rozan Mohamad Yunus1, Hiroko Endo2, Masaharu Tsuji1,2, Hiroki Ago1,2,3
12Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580,
Japan 3PRESTO, Japan Science and Technology (JST), Saitama 332-0012, Japan

Heterostructures of 2D layered materials have attracted great interest due to theirelectronic and optical properties, which are expected by combining different types of 2D
materials [1]. On the other hand, reduction of the dimensionality from 2D to 1D, such asgraphene nanoribbons (GNRs), is also interesting due to the electron confinement and uniqueedge effects [2]. Here, we demonstrate bottom-up growth of MoS2/GNR heterostructures by a
two-step chemical vapor deposition (CVD) method. It is a unique growth process because 2D
materials of MoS2 could grow in 1D direction by following the 1D nature of our GNRs. The
GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film as reported
previously [3]. After transferring on SiO2, the GNRs were subjected to the second CVD togrow MoS2 using MoO3 and S powder as feedstock. The MoS2 layer was found to growpreferentially on the surface of the GNRs, while the coverage could be further tuned byadjusting the growth conditions. Figure 1a,b shows the SEM images after the second CVD
with a substrate temperature of 900 ºC for 30 min, where the dark contrast corresponds to the
MoS2 grown on the GNR. Raman spectra confirmed a single-layer MoS2 grown on GNR,
while from the comparison with the single-layer MoS2 domains grown on sapphire, we foundthat the PL quenching effect by GNRs. Furthermore, the transport properties under lightillumination were measured, as illustrated in Figure 1c, and high photoinduced current
modulation for the heterostructures were observed upon illumination with visible light (Figure1d). This optical response is higher than that of the heterostructure of MoS2/graphene sheet [4].
The ability to grow a novel 1D heterostructure of layered materials by bottom-up CVD
approach will open a new avenue to expand the dimensionality of the material synthesis andapplications [5].

Fig 1: (a,b) SEM images of as-grown MoS2/GNR heterostructures. (c) Schematic diagram of the FET for fully
covered MoS2 on GNR with visible light illumination. (d) Transfer curves of the fully covered MoS 2/GNR
device measured in dark and under illumination with different power densities. Inset shows a SEM image of fully
covered MoS2 on GNR, which is the identical sample used to measure the transfer curve.
[1] H. Lim et al., Chem. Mater. 26, 4891 (2014). [2] X. Li et al., Science 319, 1229 (2008). [3] R. Mohamad
Yunus et al., Chem. Mater. 26, 5215 (2014). [4] H. Ago et al., ACS Appl. Mater. Interfaces 7, 5265 (2015). [5] R.
Mohamad Yunus et al., submitted.
Corresponding Author: Hiroki Ago (Tel & Fax: +892-583-7817, E-mail: ago@cm.kyushu-u.ac.jp)- 137 - 137 -3P-25Gate-Tunable Doping Level of Molecular Doped Graphene○Pablo Solís-Fernández1, Masaharu Tsuji1, Hiroki Ago1,2
1Institute for Materials Chemistry and Engineering, Kyushu Univ., Fukuoka 816-8580, Japan
2
PRESTO, Japan Science and Technology Agency (JST), Saitama 332-0012, Japan

Control of the charge carrier type and concentration in graphene can be attained with anapplied external electric field, as in graphene field-effect transistors (FETs) [1]. However,
implementation of graphene in some current technologies, such as complementary
metal-oxide-semiconductor (CMOS) logic structures or optoelectronic devices, require an
intrinsic and controllable doping of the graphene [2]. Here, we report the gate-tunable doping
effect on graphene of absorbed piperidine (schematics of the piperidine molecule can be seenin Fig. 1a) [3].
Electric measurements showed that the doping level of graphene can be varied from anunintentional p-type to n-type, by gradually increasing the amount of adsorbed piperidine (Fig.
1a). For intermediate coverages of piperidine, the coexistence of covered and uncovered areasof graphene induces the formation of p-n junctions (dotted line in Fig. 1a). Interestingly, thedoping effect of the piperidine can be further increased by the application of negative
back-gate voltages, evidenced by the shift of the charge neutrality point (CNP) (Fig. 1b). This
is attributed to the interaction between the piperidine molecules and the electric field
generated by the gate, which in turn will tune the charge transfer between the piperidine andthe graphene. Given the non-covalent nature of the bonding, the electronic properties ofgraphene result well preserved, resulting in an easy, controllable, and nonintrusive method toalter the electronic structure of graphene, which can be interesting for the fabrication ofmemory devices.

Fig.1: a) Resistance versus gate voltage of a same FET before (black), and after mild (dotted) and large (grey)
exposures to piperidine. Inset shows the structure of piperidine. b) Gate-tuned doping in the graphene FET
exposed to a mild dose of piperidine. Doping level increases (light gray to black curve) as the minimum applied
voltage decreases. Inset shows the variation of the CNP with the minimum applied gate voltage.
[1] K.S. Novoselov et al., Science 306, 666 (2004).
[2] F. Schwierz, Nat. Nanotechnol. 5, 487 (2010).
[3] P. Solís-Fernández, M. Tsuji, H. Ago, submitted.
Corresponding Author: P. Solís Fernández and H. Ago
Tel: +81-92-583-7817, Fax: +81-92-583-7817,
E-mail: ps-fernandez@cm.kyushu-u.ac.jp, ago@cm.kyushu-u.ac.jp- 138 - 138 -3P-26Highly stable and sensitive graphene photosensor realized by thermally
oxidized Au electrodes○Shohei Ishida1, Yuki Anno1, Masato Takeuchi2, Masaya Matsuoka2, Kuniharu Takei1,
Takayuki Arie1, Seiji Akita1
1

Department of Physics and electronics, Osaka Prefecture University
2
Department of Applied Chemistry, Osaka Prefecture University

IDS (A)

Graphene is expected for optical sensors with ultra-wide wavelength region fromultraviolet to terahertz which originates from zero-gap band structure. Recently, we reported
highly photosensitive graphene filed-effect transistor (G-FET) with the native Au oxide layer
on Au electrodes [1], where stable and controlled formation of Au oxide layer is still open
subject. In this study, we investigated the formation of Au oxide layer using thermal oxidation
process.
Source and drain electrodes consisting of Cr/Au (5nm/30nm) were fabricated on highly
doped Si substrate with a 300nm thick SiO2 layer. The oxidation of the Au electrode was
performed by annealing at 100 oC in O2 (1 atm) for 4 hours. Then a monolayer graphene wastransferred onto to the substrate and trimmed by using oxygen plasma etching to form an FET
channel (width x length = 5 x 4 m2), where the graphene was synthesized using low pressurechemical vapor deposition at 1000 oC using Cu foil as catalyst.
Figure 1 shows transfer characteristics of the G-FET measured under dark and illumination(510nm, ~228mW/cm2) conditions in vacuum at ~10-3 Pa. The shift of Dirac point (VDirac) iswell suppressed in the case of the thermal oxidation of Au electrodes, where thephotosensitivity appears only at VGS > VDirac. Note that no further shift of VDirac is also
observed for the repetitive measurements. The faster sweep rate of VGS is favorable for thephotosensitivity owing to the lower dark current. At the sweep rate of VGS = 14V/s, highphotoresponse of ~ 1.7 x 105 AW-1 is achieved. These results are comparable to the G-FETwith native Au oxide layer on electrodes [1]. Note that the G-FET with Au oxide layer formed
at 150 oC showed poor photosensitivity with shift of VDirac, because the Au2O3, which is moststable Au oxide, is dissolved higher than 150 oC.
20
Thus, the thermal oxidation process is efficientphoto dark
14 V/s18
for formation of the Au oxide layer for the highly
7.0 V/sphotosensitive G-FET.
16
3.6
V/s
Acknowledgement
14
This work was partially supported by JSPS
Photo
12
KAKENHI Grant Number 25286010, by the
Dark
10
Osaka Prefectural Government and by the Iketani
300K
Science and Technology Foundation.
8
V
=
50
mV
ReferenceDS60[1] S. Ishida et al, submitted
Corresponding Author: S. Akita
Tel: +81-72-254-9261
E-mail:akita@pe.osakafu-u.ac.jp

10

20

30

40

VGS (V)50

60

Fig.1: Transfer characteristics of the G-FETwith thermally oxidized Au layer on theelectrodes with various sweep rate of VGS.

- 139 - 139 -3P-27
Evaluation of pyrene density on graphene films: toward sensor applications○Yuji Matsui, Ryota Negishi and Yoshihiro Kobayashi
Department of Applied Physics, Osaka University, Suita 565-0871, Japan

Absorbance at 350nm[1] J. P. Kim et al., Biosens. Bioelectron. 24(2009)3372.
[2] D.Yang et al., Carbon. 47(2009)147-152[3] R. Negishi et al., The 66th JSAP,18p-E2-11(2014).

- 140 - 140 -Coverage (%)

Reduced graphene oxide (rGO) is one of promising candidates as the channel materials infield effect transistor which can be applied to highly sensitive biosensors. Pyrene
functionalized by succinimidyl group is widely used as anchor molecule which links
biomolecule-recognizing materials such as aptamers to the rGO surface [1]. Evaluation andcontrol of pyrene density adsorbed on the rGO surfaces are essential issues for optimizing thesensor structures with desired sensitivity and stability. In this study, we evaluate the pyrene
density adsorbed on GO and rGO using ultraviolet visible (UV) absorption spectroscopy, andfind that the pyrene density is dominated by oxygen-related groups slightly remaining on therGO surfaces, rather than restoration of -conjugated system in graphitic structure of the rGO.
Uniform GO thin film was prepared by electrostatic adsorption of GO from its aqueous
dispersion on transparent quartz substrate modified with a self-assembled monolayer. The GOfilm was thermally treated in inert (Ar) and reactive (ethanol) environments for reduction andstructural restoration. Pyrene was adsorbed by immersing the samples in pyrene solutions
with various concentrations for the time sufficient to achieve adsorption equilibrium. Pyrene
density was evaluated from the UV spectra of the samples, especially focusing the absorbanceat 350 nm in the spectra, which is the wavelength of a marker signal for pyrene.
Figure 1 analyzes the relation between the pyrene densities obtained from the UV spectra
and the pyrene concentrations used for the sample preparation. The pyrene density can be
fitted well by Langmuir isotherm (dash lines) for relatively dilute concentration range(10μM-500μM), indicating Langmuir-type monolayer adsorption. For relatively higher
concentration (1mM), however, it significantly deviates from the fitting curves, suggesting
gradual transfer from monolayer to multilayer adsorption. These results indicate that the
pyrene density can be controlled by the concentration of pyrene solution used for sample
preparation. Figure 1 also indicates that the thermal treatments drastically improve the pyrene
density from that of the pristine GO. The pyrene densities are slightly affected by thetemperatures of the thermal treatments, and are not virtually influenced by the environment(Ar/ethanol). As indicated by the analysis using X-ray photoelectron spectroscopy,
oxygen-containing groups are efficiently removed from GO for higher temperature [2]. We
have reported that the thermal treatments in ethanol lead to the remarkable restoration ofgraphitic structure in addition to removal of oxygen containing groups [3]. Therefore, theobserved results in this study indicate that residual
Ethanol 1000 ℃
0.04
40
Ar 1000 ℃
oxygen-related groups on the rGO after the thermal
Ar 400 ℃
treatments dominate the pyrene density, and thePristine GO
0.0330
restoration of -conjugated system in rGO, whichshould be intuitively a dominant factor of the pyrene
0.02
20
adsorption on rGO, has only minor effects to thepyrene density. This unexpected phenomenon
Fitting curves
0.01
10
suggests that pyrene molecule only interacts withvery narrow area of -conjugated system on rGO,
0which is hardly detectable in Raman spectroscopy.
0
500
1000
Concentration(μM)
Pyrene density on GO and rGO analyzed from
UV spectra of the samples prepared using
pyrene solutions with various concentration.

3P-28
Effects of electrodeposition conditions on the states of Pt-Ru nanoparticles
on nanocarbon materials and their electrocatalytic activities
for methanol oxidation(II)○1 Haruhiko Yoshitake , 3Eiichi Inami, 2Wang Zhipeng and 1,3Hironori Ogata
1

2

Graduate School of Science and Engineering, Hosei University Koganei 184-8584, Japan
Institute of Carbon Science and Technology, Shinshu University, Nagano 380-8553, Japan
3
Research Center for Micro-Nano Technology,Hosei University,Koganei 184-0003,Japan

Direct methanol fuel cells (DMFCs) are one of the most promising transportable powersources which can be used in mobiles, laptops, and small power generation. The basic
operation principle of DMFCs involves methanol oxidation and oxygen reduction on the
precious metal catalysts, which are loaded on the support surfaces. As is well-known, thedispersion of Pt-based alloys on carbon supports as well as catalyst particle size and shapeplays a dominant role in the electrochemical performance for fuel cells. We have explored theelectrocatalytic properties of Pt-based nanoparticles supported on the carbon materials by
one-step electrodeposition. In this study, we brought in pulsed electrodeposition method andinvestigated the effects of the electrodeposition conditions on the shape and dispersion stateand electrocatalytic properties of Pt-based nanoparticles supported on the carbon materials, i.e.
single-walled carbon nanotubes(SWNTs) or highly ordered pyrolytic graphite(HOPG) or
carbon nanowalls(CNWs). Figure 1 shows the one example of the CV responses of Pt
nanoparticles deposited on SWNTs at pulsed electrodeposition with potentials ranging of from
0 VAg/AgCl (500 msec.) to -2.0 VAg/AgCl(500 msec.) for 250 cycles. Table.1 summarizes theelectrochemical characteristics of methanol oxidation. The detailed results on the relationshipbetween the deposition conditions, the shape and dispersion state of Pt nanoparticles and theirelectrocatalytic performance for methanol oxidation will be presented.

Supported
Carbon

SWMTs

Figure 1.

CV responses of Pt/SWNTs

Table 1.

References:

Active area

Jf

2

2

[mA/cm ]3

55.8

of SPt [cm ]2.30×10

Vf
[V]

0.78

Electrochemical characteristics
of methanol oxidation.

(1)J.M.Sieben et al., J. Appl. Electrochem.38(2008)483-490.
(2)Zhipeng Wang, Mao Shoji and Hironori Ogata, Appl. Surf. Sci.259(2012)219-224.
(3)M.Tsai et al., ElectroChemistry. Communication 8(2006)1445-1452.
(4)S.H.Ahn et al., Chem. Eng .J. , (2012)181-182 , 276-280.
Corresponding Author: Hironori Ogata,Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp- 141 - 141 -

If/Ib

0.697

3P-29Fabrication of Graphene Nanoribbons by Unzip of Chirality-Selected
Single-walled Carbon Nanotubes
Minoru Fukumori,1 Hirofumi Tanaka,2,* Takuji Ogawa1,**
Graduate School of Science, Osaka University, Osaka 560-0043, Japan
2
Graduate School of LSSE, Kyushu Inst. Tech., Fukuoka 808-0196, Japan○

1

Graphene is attractive material for future nanoelectronics because of its high carrier
mobility. Graphene nanoribbon (GNR) is a narrow and straight edged stripes of graphene.
Electric properties of GNR depend on its width and edge structure. When the width is lessthan 10 nm, the GNR is semiconducting. In this work, we succeeded in fabricating GNR lessthan 10 nm width by applying the technique of unzipping reported by Jiao et al. [1] tosingle-walled carbon nanotube (SWNT). [2]SWNT has variation of structure and the variation is expected to affect the ease of
unzipping. Dependence of unzipping is important information to understand the unzipping
process and to control GNR structure. To investigate the variation dependence, we performedexperiment as described below.
A solution of (6, 5) SWNT was prepared byaqueous two-phase extraction [3]. Obtained
SWNT was unzipped by annealing andsonication. Figure 1 shows an absorbance
spectrum of the (6, 5) SWNT (dotted line),
GNR unzipped from (6, 5) SWNT (solid line)
and GNR unzipped from HiPco SWNT (dashedline). The (6, 5) SWNT shows E11 peak at 1020
nm (dashed arrow). After unzipping, this peak
disappeared and a narrow new peak was foundat 960 nm (solid arrow). The peak at shorter
wavelength corresponds to narrower GNR [5].
Therefore, GNR unzipped form (6, 5) SWNT
has narrower than that from HiPco SWNT andthis is because the diameter of (6, 5) SWNT
(0.75 nm) is smaller than that of HiPco SWNT
(avg. 1.0 nm). The narrow peak implies that the
distribution of width was very small and GNR
Fig. 1 Absorbance spectrum of (6, 5) SWNT
from (6, 5) SWNT has single structure.
(dotted line), GNR from (6, 5) SWNT (solid
We will also report about GNRs unzipped line), GNR from HiPco SWNT (dashed line)from other chirality and the dependence of
unzipping on chirality.
[1] L. Jiao et al. Nat. Nanotechnol., 5, 321 (2010).
[2] H. Tanaka et al. Sci. Rep., 5, 12341 (2015).
[3] J. A. Fagan et al. Adv. Mater., 26, 2800 (2014).
[4] L. Yang et al. Phys. Rev. B 99, 186801 (2007)[5] Y. Lu et al. J. Appl. Phys., 115, 103701 (2014).
Corresponding Author: H. Tanaka
Tel&Fax: 093-695-6157
E-mail: *tanaka@brain.kyutech.ac.jp, ** ogawa@chem.sci.osaka-u.ac.jp- 142 - 142 -3P-30Evaluation of Electrochemical Characteristic ofGraphene/Au(111) Electrode○Koji Nakashima1, Ryota Kumagai1, Satoshi Yasuda1, 2, Kei Murakoshi1
1Department of Chemistry, Hokkaido University, Sapporo 060-0810, Japan
2
JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan

Surface modification on metal electrode under electrolyte solution plays
important role in tuning the electrochemical functionality and thus has been widely
studied for developing novel applications such as protection of corrosion, sensing,energy storage and energy conversion systems. Graphene is one of the two dimensional
materials and possesses not only high electronic conductivity, electrochemical stability
but also selective proton permeability.[1] However, despite of the significant potential
as surface modification material, there have been few experimental studies onelectrochemical property of graphene grown on metal electrode. In this study, weinvestigated the first characterization of electrochemical behavior of monolayer
graphene grown on Au(111) electrode. Monolayer graphene with high crystalline
structure was synthesized on Au(111) single crystal by atmospheric CVD. Cyclic
voltammetry measurement in 0.1M H2SO4 aqueous solution showed that the graphene
blocks water molecule to access thecurrent with hysteresis loop resulting fromhydrogen evolution reaction (HER) could
be observed. It is strongly suggested thatobserved HER are attributed to be selective
proton diffusion into the graphene/Au
interface or the permeability.
[1] S. Hu, A. K. Geim et al., Nature, 516, 227 (2014).
Corresponding Author: K. Murakoshi
TEL & FAX: +81-(0)11-706-2704
E-mail: kei@sci.hokudai.ac.jp- 143 - 143 -200 µA cm−2

Current density / µA cm−2

underneath Au surface and result in
effectively
inhibitionoftheoxidation-reduction reactions of the Au (Fig.
1). Graphene coverage can be calculated by
the reduction peak analysis and wasestimated to 99.4 %. Interestingly, cathodic

HOPG

Au(111)Graphene/Au(111)

−0.5

0.0

0.5

1.0

1.5

2.0

Potential / V vs. RHE

Fig.1. Cyclic voltammograms for freshly
cleaved HOPG, bare Au(111) and monolayer
graphene grown on Au(111) in 0.1 M aqueous
H2SO4.

3P-31
Geometric and electronic structures of one-dimensionally polymerizedcoronene molecules○Kohei Narita and Susumu Okada

Graduate School of Pure and Applied Sciences, University of Tsukuba
1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
Graphene nanoribbons (GNRs) have unique electronic properties depending on their edge
shape and width. It has been pointed out that GNRs with armchair edges are metals orsemiconductors depending on their width because of the discretization condition imposed on
the two-dimensional energy bands of graphene. In contrast, GNRs with zigzag edges possess
peculiar edge localized states known as the edge states, leading to the spin polarization near
the edge atomic site. In addition, it has been pointed out that the edge roughness causes
further variation in the electronic properties of GNRs. Recently, it has been experimentallydemonstrated the origomerization and polymerization of coronene molecules (C24H12) insidecarbon nanotubes, leading to the ultra narrow GNRs with edge roughness [1,2]. In this work,
we study the geometric and electronic structures of 1D polymers of coronene molecules (Fig.
1) based on density functional theory with generalized gradient approximation.
Figure 1 shows the optimized structures of three coronene polymers with four-, five-, andsix-membered intermolecular links. Among these polymers, the polymer with thesix-membered link has the lowest total energy. Calculated total energies of the five- andfour-membered link polymers are higher than the polymer with the six-membered link by 25
and 113 meV/atom, respectively. Thus, three structures may exist as energetically stablestructure under ambient conditions once they are synthesized. Electronic structures of thesepolymers are semiconductors with energy gaps of 0.80, 1.54 and 0.85 eV for four-, five-, andsix-membered links, respectively (Fig. 2). The four- and six-membered-link polymers possess
direct band gap at the Γ point, while the five-membered link polymer possesses indirect gap
between the Γ and X points.

Fig. 1 Geometric structures of (a) the
4-polymer, (b) 5-polymer, and (c) 6-polymer.

Fig. 2 Electronic structures of (a) the
4-polymer, (b) 5-polymer, and (c)6-polymer.

[1] M. Fujihara, Y. Miyata, R. Kitaura, Y. Nishimura, C. Camacho, S. Irle, Y. Iizumi, T. Okazaki, H. Shinohara,
J. Phys. Chem. C 116, 15141 (2012).
[2] H.E. Lim, Y. Miyata, M. Fujihara, S. Okada, Z. Liu, Arifin, K. Sato, H. Omachi, R. Kitaura, S. Irle, K.
Suenaga, H. Shinohara, ACS Nano, 9, 5034 (2015).
Corresponding Author: K.	
  Narita
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: sokada@comas.frsc.tsukuba.ac.jp- 144 - 144 -3P-32
Electronic properties of B/N-doped bilayer graphene
Yoshitaka Fujimoto1, ○Susumu Saito1-3
1

Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
2
International Research Center for Nanoscience and Quantum Physics,
Tokyo Institute of Technology, Tokyo 152-8551, Japan
3
Materials Research Center for Element Strategy, Tokyo Institute of Technology,
Yokohama, Kanagawa 226-8503, Japan
We study the energetics and the electronic properties of B-doped and N-doped bilayer
graphene in the framework of the density functional theory [1]. As for the stacking of layers,
we consider not only so-called “AB stacking” but also the “AA stacking” because the latterhas been also observed experimentally [2]. In the case of the AB stacking, there are two kindsof doping sites as shown in the following figure (“AB1” and “AB2”). From the total energies
obtained using the supercell calculation, it is found that the formation energy of B doping isrelatively insensitive to the doping site, while that of N doping shows rather strong
doping-site dependence with up to 44 meV difference.

Polarities of the B-doped and N-doped systems are found to be p-type and n-type,respectively, with fully ionized dopant atoms. In addition, we report the calculated work
function values for the doped systems studied. We also show the simulated STM images ofthe doped bilayer graphene to be used to identify them experimentally in the future.
[1] Y. Fujimoto and S. Saito, Surface Science 634, 57 (2015).
[2] Z. Liu, K. Suenaga, P. J. F. Harris, and S. Iijima, Physical Review Letters 102, 015501 (2009).
Corresponding Author: Y. Fujimoto
E-mail: fujimoto@stat.phys.ttiech.ac.jp
Fax: +81-3-5734-2368- 145 - 145 -3P-33Growth and characterization of single- and few-layer NbS2 and NbSe2○Takato Hotta1, Sihan Zhao 1, Kenji Watanabe2, Takashi Taniguchi2, Hisanori Shinohara1, Ryo

Kitaura1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
2

National Institute for Materials Science, Tsukuba 305-0044, Japan

Two-dimensional (2D) metal is an emerging material exhibiting unique properties. In
particular, the recent research on superconductivity in 2D metals has provided great impacts
and expanded the research on superconductors to various 2D materials1,2. Sample preparation
however has been the serious bottle-neck for exploration of properties of 2D metal, whichsituation is in stark contrast to the well-studied 2D layered semiconductors.
We report here the successful growth of 2D metallic transition metal dichalcogenides(TMDCs), NbS2 and NbSe2, by respective chemical vapor deposition (CVD) and molecularbeam epitaxy (MBE). In both methods, mono- and few-layer NbS2 and NbSe2 have been grown
directly on atomically flat hexagonal boron nitride (hBN). Figure.1 shows a typical atomic force
microscope (AFM) image of NbS2 grown on hBN. As seen in the image, hexagonal andtriangular NbS2 crystals, whose lateral size is about 1~2 µm, are formed on hBN. Observed
Raman spectra is layer-number dependent (Figure 2), where A1 and E2 modes have shown shift
to the blue and red side, respectively. Figure 3 shows an AFM image of MBE-grown NbSe2,
whose thickness ranges from mono- to few-layer. In the presentation, in addition to further
details on the growth method and structure of grown atomic layers, characterization including
optical response and electronic transport will be discussed.

Fig. 1 An AFM image of NbS2

Fig. 2 Raman spectra of NbS2 measured Fig. 3 An AFM image of NbSe2

grown on hBN. Dotted lines areusing excitation wavelength of 532 nm. grown on hBN.

eye-guides.
[1] Zhang, T. et al., Nature Phys. 6, 104-108 (2010). [2] Ge, J. et al., Nature Mater. 14, 285-289 (2015).
Corresponding Author: R.Kitaura and H.Shinohara Tel: +81-52-789-2477, Fax: +81-52-747-6442
E-mail: r.kitaura@nagoya-u.jp and noris@nagoya-u.jp- 146 - 146 -3P-34
Anisotropy of optical absorption spectrum of phosphorene○Yuki Tatsumi1, Pourya Ayria1, Huaihong Guo2, Teng Yang3, Riichiro Saito1
12

Department of Physics, Tohoku University, Sendai 980-8578, Japan
College of Science, Liaoning Shihua University, Fushun, 113001, China
3
Institute of Metal Research, CAS, Shenyang 110016, China

Phosphorene, atomic layer of phosphorus, is a semiconducting material which has directenergy gap (~0.5eV). Owing to its characteristic structure [Fig. 1 (a)], phosphorene showssome anisotropic phenomena, such as in optical absorption[1] and electric conductivity[2].
However, the origin of the anisotropies is not interpreted clearly. In this work, we focus on
the anisotropy of optical absorption of phosphorene. Our purpose of the present work is toreveal the origin of anisotropy of optical absorption and investigate which energy bands
contribute to optical absorption. In order to investigate the polarization dependence ofabsorption of phosphorene, we perform two step calculations: (1) DFT calculation for
obtaining the electronic energy bands of phosphorene, (2) Calculation of matrix elements ofelectron-photon interaction based on dipole approximation [3] by using the eigenfunctions ofenergy bands.
Figure 1 (b) shows calculated polarization dependence of absorption spectrum as incident
photon energy. We can see x-y (in-plane) anisotropy around the gap energy (~0.5 eV). We
can say that only y-polarization absorption can be observed around the gap energy. Such anin-plane anisotropy is in good agreement with the previous theoretical work [1]. Not only thein-plane anisotropy, we found that there is a large absorption peak at around 7 eV in the caseof z- (out-of-plane) polarization. We can expect that selection rules of optical transition areassociated with these anisotropic phenomena. We will show the origin of these anisotropies ofphosphorene from dipole approximation approach.

Fig.1: (a) Atomic structure of phosphorene (side view and top view). (b) Polarization
dependence of absorption spectrum in phosphorene on incident photon energy.
[1] V. Tran, et al. Phys. Rev. B, 89, 235319 (2014)[2] F. Xia, et al. Nature Communications, 5, 4458 (2014)[3] A. Jorio, et al. Raman Spectroscopy in Graphene Related Systems, Wiley (2011)
Corresponding Author: Yuki Tatsumi
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: tatsumi@flex.phys.tohoku.ac.jp- 147 - 147 -3P-35Synthesis and characterization of Mo1-xRexS2/MoS2 heterostructures○

1

Shohei Mori1, Yutaka Maniwa1, Yasumitsu Miyata1,2
Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
JST, PRESTO, Kawaguchi, 332-0012, JapanThe heterostructures of two-dimensional semiconductors have attracted much attention for
their potential applications in electronics and optoelectronic. Recently, several groups
including ours have reported the vapor-phase growth of lateral and stacked heterostructures
based on transition metal dichalcogenides (TMDCs) such as MoS2, WS2, and Mo1-xWxS2
alloys [1-5]. In particular, the Mo1-xWxS2 alloys have composition-dependent tunablebandgaps and could be useful for the fine tuning of electronic properties. In addition to thebandgap modulation, the control of carrier density is also one of the most important issue tobe solved. In this study, we have focused our attention on the alloying of rhenium (Re) andmolybdenum (Mo) for the carrier control of TMDC-based heterostructures.
Mo1-xRexS2 alloys were formed on sapphire substrates by chemical vapor deposition (CVD)method of sulfur, molybdenum oxide, and rhenium oxide. For the preparation ofheterostructures, MoS2 monolayers were firstly grown on a sapphire substrate, and then,Mo1-xRexS2 alloys were grown on the same substrate by two step CVD process. The formationof Mo1-xRexS2 alloys is probed through the changes in Raman spectra (Fig. 1a). For theheterostructures, atomic force microscope (AFM) observations (Fig. 1b,c) show the growth ofmonolayer Mo1-xRexS2 on monolayer MoS2. In the presentation, we will report on the detailsof growth and properties of Mo1-xRexS2-based heterostructures.

Fig.1 (a) Raman spectra of MoS2, MoxRe1-xS2, and ReS2 atomic layers. (b) AFM image and (c) height profiles ofthe Mo1-xRexS2/MoS2 heterostructure.
[1] Y. Gong, et al., Nat. Mater. 13, 1135 (2014)., [2] X. Duan, et al., Nat. Nanotechnol, 9, 1024 (2014).,[3] C. Huang, et al., Nat. Mater. 13, 1096 (2014). [4] Y. Kobayashi, S. Mori, et al., Nano Res. in press,[5] S. Mori, et al., The 48th FNTG symposium.
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508, E-mail: ymiyata@tmu.ac.jp- 148 - 148 -3P-36
Exploring transport property of MoS2 field effect transistor
by scanning gate microscopy○Masahiro Matsunaga1, Ayaka Higuchi1, Guanchen He2, Jonathan P. Bird2, Yuichi Ochiai1
and Nobuyuki Aoki1, 3
1Graduate School of Advanced Integration Science, Chiba University,
Chiba 263-8522, Japan2
Department of Electrical Engineering, University at Buffalo, SUNY,
Buffalo, New York 14260-1920, USA
3
JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan[1] X. Wei et al., Jpn. J. Appl. Phys. 51, 04DN05 (2012).
[2] B. Radisavljevic et al., Nature Nanotech. 6, 147 (2011).
[3] Y. Zhan et al., Small 8, 966-971 (2012).
Corresponding Author: N. Aoki
Tel: +81-43-290-3430, Fax: +81-43-290-3427
E-mail: n-aoki@faculty.chiba-u.jp- 149 - 149 -Edge of MoS2

(a)

2.8µm

SGM response (pA)

(b)
10
5
0
-5

0

2

4

6
8
10
Distance (m)12

14

Fig.1 (a) AFM image of the MoS2 FET.
The broken lines correspond to the edgesof the MoS2 crystal. (b) Line profiles of
SGM images along solid line in (a). Twocurves are obtained at the different bias
polarities. Shaded regions correspond to
the electrodes.
10

SGM response (pA)

Scanning gate microscopy (SGM) is a categoryof scanning probe microscope techniques. SGM can
explore local transport properties in semiconducting
materials using a metallic coated cantilever as a mobile
top gate [1]. Recently, transition metal dichalcogenides(TMDCs) have received remarkable attention as new
2d materials [2]. Molybdenum disulfide (MoS2) is atypical example of TMDCs group.
In this report, we investigate local gate response
within MoS2 field effect transistor (FET) by SGM. The
MoS2 was directly grown on SiO2 (285 nm)/Si
substrate by chemical vapor deposition, supplied by the
Ajayan group at Rice University [3]. Source-drainelectrodes (Cr/Au) were deposited using electron beamlithography. Atomic force microscope (AFM) image ofchannel region within the FET is shown in Fig. 1 (a).
After fabricating the FET, the SGM observation was
performed at atmospheric conditions.
The SGM images were obtained at different tip
voltages. Clear responses were observed at the edge
between the grounded electrode and MoS2 (Fig. 1 (b)).
The peak height of responses vary according to then-type characteristic at different tip voltages as shownin Fig. 2. These results indicate that the responses are
attribute to control of Schottky barrier at the injectionside, and the transport property of this MoS2 FET issuffered by this effect.
The work was partially supported by KAKENHI
Grant Number 26600009.

8V
4V
0V
-4 V

8
6
4
2
0
-2

4

6

Distance (m)8

Fig. 2 Line profiles of SGM responses
along the solid line in Fig. 1 (a) atdifferent tip voltages. Shaded regions
correspond to the electrodes.

発表索引
Author Index

Author Index

Bold number: Speaker<A>
Achiba, Yohji
Ago, Hiroki<F>
Fernández, Pablo Solís
Fujigaya, Tsuyohiko

Akita, Seiji
An, HuaAnno, Yuki
Aoi, Shoko
Aoki, Nobuyuki
Araki, Yuki
Arie, Takayuki
Asaka, Koji
Ata, Seisuke
Awano, Yuji
Awara, Kousuke
Ayria, Pourya

1P-3, 1P-18
2P-31, 3P-20, 3P-24,
3P-25
1P-12 3P-26,
1P-21, 2-7
3P-26
3P-8
3P-36
3P-5
1P-12, 3P-26
2P-28, 3P-19
1P-14
3S-7
3-4
3P-34

Fujihara, Miho
Fujii, Shunjiro
Fujimoto, Taiyo
Fujimoto,Yoshitaka
Fujioka, Koichi
Fujita, Wataru
Fukamachi, Satoru
Fukumori, Minoru
Fukuzumi, Shunichi
Furukawa, Yoritaka
Furuya, Atom
Futaba, Don N.

<B>
Bando, Yuki
Bandow, Shunji
Bird, Jonathan

1-7
1P-34
3P-36

<H>
Hamasaki, Atom
Hamasaki, Yuki
Harigai, Toru
Harumiya, Shinnosuke
Haruta, Naoki
Hasegawa, Kei
Hasegawa, MasatakaHata, Kenji<C>Chechetka, Svetlana
Chen, Guohai
Chiashi, Shohei
Chiba, Takaaki
Chikamatsu, Masayuki
Chu, Leiqiang
Cui, Kehang

1-5
1-4
1P-21, 2-7, 2P-6,
2P-11, 3P-4, 3P-16
3-6
2P-2
2-3
2-7, 2P-6<D>
Davis, Robert C.
Delacou, Clement
Doi, Motomichi
Doi, Yuta
Domanov, Oleg

1-4
1P-8, 3-6
1-5
1P-1
2P-15

<E>
Eda, Goki
Eiji, Osawa
Eisterer, MichaelEndo, Hiroko
Endo, Masaru
Endoh, Hiroyuki

2-3
3S-6
2P-15
2P-31, 3P-20, 3P-24
3-8
1P-19

<G>
Guo, Huaihong

Hatakeyama, Kazuto
Hatta, Taizo
Hayashi, Kenjiro
Hayashi, Yusuke
Hayashi, Yutaro
He, Guanchen
Hibino, Hiroki
Higuchi, Ayaka
Hino, Shojun
Hirahara, KaoriHirakawa, Takuya
Hirano, Atsushi
Hirata, Chika
Hirotani, Jun
Horibe, Masashi
Hoshino, Ryo
Hung, Nguyen Tuan

- 151 - 151 -3P-25
1P-11, 1P-15, 2P-8,
3P-7, 3P-11
1-2, 3P-21
2-5, 2P-10
2P-23
3P-32
1P-1
1P-3
3P-20
3P-29
1-13, 3P-8
3P-4
2P-4
1-4, 2-6, 3-5,
3P-10
3P-34
2P-12
2P-8
2P-26, 2P-27
3P-14
1P-18
1P-9, 2P-9
1-1
1-4, 1P-14, 2-6,
3-5, 3P-10
1P-30, 2P-21
2P-2
1P-33
2P-21
2P-16
3P-36
2P-31
3P-36
3-3
2P-3, 3P-5
2-5, 2P-10
2-5, 2P-10
1-12
3P-13
2P-17
2P-16
1P-4

<I>
Igarashi, Miki
Ikemura, Yu-usuke
Ikuhara, Yuichi
Ikuma, Naohiko
Imadate, Konan
Imai, Kentaro
Inaba, Masafumi
Inami, Eiichi
Inoue, Ryosuke
Inoue, Taiki
Inoue, Yuya
Ishida, Ryo
Ishida, Shohei
Ishihara, Masatou
Ishii, Akihiro
Ishii, Yosuke
Ishimaru, Wataru
Ishio, Yasuyo
Ishiyama, U
Ishizeki, Keisuke
Ito, Shinichi
Iwasa, Yoshihiro
Iwata, Nobuyuki
Izawa, Tetsumi

3-2
1P-25
2-7
1P-1, 3P-1
2P-3
2P-16
3-7
3P-28
1-2, 1P-24, 3P-21
1P-21, 2-7, 2P-11,
3P-4, 3P-16
2P-20
1P-16
3P-26
1-1
3-10
3P-3
2P-13
2P-18
1P-6
1P-10
1P-35
2-4
2P-16, 3P-14
3P-23

<J>
Jeon, Il
Jikei, Mitsutoshi
Jippo, Hideyuki
Juhasz, Gergely

1P-8, 3-6
1-6
1P-33
1P-5

<K>
Kanazawa, Naoki
Kaneko, Toshiro
Kataoka, Yosuke
Kataura, Hiromichi
Kato, Hiromitsu
Kato,Yuichiro K.
Kato, Toshiaki
Katoh, Keiichi
Kauppinen, Esko I.
Kawaguchi, Daiki
Kawai, Hideki
Kawai, Tsuyoshi
Kawamoto, Akira
Kawano, Saki
Kawarada, Hiroshi
Kawasaki, Shinji

1P-16
1-3, 1P-20, 2P-32
3P-17, 3P-18
1-10, 2-5, 2P-10
1-1
3-10
1-3, 1P-20, 2P-32
2P-14
1S-2, 1P-8, 3-6
3P-14
1P-7
3P-9
3-4
1P-2
3-7
3P-3

Kitai, Ryuhei
Kitamura, Yoshimasa
Kitaura, Ryo
Ko, Jeong Won
Ko, Weon Bae
Kobashi, Kazufumi
Kobayashi, Daiki
Kobayashi, Keita
Kobayashi, Miu
Kobayashi, Yoshihiro
Kobayashi, Yu
Kodama, Takeshi
Kohno, Naoki
Koinuma, Michio
Kokubo, Ken
Komori, Fumio
Konno, Toshio
Kono, Kenji
Kosugi, Yuta
Kowase, Takayuki
Kozawa, Akinari
Kozawa, Daichi
Kumagai, Ryota
Kumamoto, Akihito
Kurita, Rei
Kuroiwa, Ryosuke
Kusunoki, Michiko
Kuwahara, Yuki

1P-3
2P-35
1-4
2P-23
1P-17, 3P-15
3-9
2P-24
1P-13, 2P-7, 2P-19,
3P-13
3-4
1P-7
2P-18, 2P-19, 3P-33
2P-1
2P-1
2-6, 3P-10
1P-12
1-8
3P-14
3P-27
2P-29, 2P-30
1P-3, 1P-18
1-13
1P-30, 2P-21
1P-1, 3P-1
1-2
1-12
1-5
1P-34
1P-9
1P-17, 3P-15
1P-27, 2P-23
1P-32, 3P-30
2-7
1-2
1-8
3-7
1P-19

<L>
Laszczyk, Karolina
Li, Jiulong
Li, Lain-Jong
Li, YanLiu, Qinghai
Liu, Zhongfan

2-6,
2P-1
2-3,
1-11
1-11
2S-4

Kikuchi, Koichi
Kim, Gayoung
Kimura, Hiroe
Kimura, Shota
Kiribayashi, Hoshimitsu
Kishida, Masahiro
Kishimoto, Ken
Kishimoto, Shigeru<M>
Maniwa, Yutaka- 152 - 152 -

3P-10
2P-23

1-2, 1P-7, 1P-24,
2P-29, 2P-30, 2P-33,
3P-21, 3P-35

Miyauchi, Yuhei
Miyazaki, Takafumi
Miyazawa, Kunich
Mizui, Kohei
Mizuki, Keiji
Mizuno, Takaaki
Mohamed, N.Baizura
Momota, Shogo
Mori, Shohei
Moriguchi, Isamu
Moriyama, Hiroshi
Motoyui, Yoshihito
Mouri, Shinichiro
Murakami, Yuta
Murakoshi, Kei
Murata, Yasujiro

1P-28
1P-8, 1P-21, 2-7,
2P-6, 2P-11, 3-6,
3P-4, 3P-16
1P-17, 2P-17, 3P-15,
3P-22
3P-8
1P-27, 1P-31, 3-8
2P-17
3P-27
2P-23
1-6
1-4
1P-30, 2P-21
3P-36
3-9
1P-8, 3-1, 3-6
3P-26
3-9
1-5
3-11
1-2, 1P-24, 2P-29,
2P-30, 2P-33, 3P-21,
3P-35
1P-31, 3-8
3-3
1-12
2P-26, 2P-27
2P-2
1P-14
1P-31
3P-7
2P-33, 3P-35
1P-29
3-2
1-2
1P-27, 1P-31, 3-8
2P-2
1P-32, 2P-4, 3P-30
3-8<N>
Nagai, Reito
Nagashima, Akiyo
Nagata, Tomoko
Nakada, Kyoko
Nakahara, Hitoshi
Nakamura, Takashi
Nakanishi, Ryo
Nakano, Masaki

2P-32
1P-11
2P-16, 3P-14
2P-34
1P-35, 3P-19
1P-27
2P-14
2-4

Maruyama, Mina
Maruyama, Shigeo
Maruyama, Takahiro
Mase, Kentaro
Matsuda, Kazunari
Matsuda, Shinichi
Matsui, Yuji
Matsuki, Keiichiro
Matsumoto, Kazuya
Matsumoto, Naoyuki
Matsumoto, Yasumichi
Matsunaga, Masahiro
Matsune, Hideki
Matsuo, Yutaka
Matsuoka, Masaya
Miyake, Shuhei
Miyako, Eijiro
Miyamoto, Yoshiyuki
Miyata, Yasumitsu

Nakano, Motohiro
Nakashima, Koji
Nakashima, Naotoshi

Nakashima, Takuya
Nakatori, Natsumi
Namba, Natsuki
Narita, Kohei
Naritsuka, Shigeya
Negishi, Ryota
Nguyen, X. Viet
Nihey, Fumiyuki
Nishihara, Yoshihiko
Nishiyama, Katsuhiko
Nishizawa, Ayumi
Noda, Suguru
Nonoguchi, Yoshiyuki
Norimatsu, Wataru
Nozaki, Junji

Nugraha, Ahmad Ridwan Tresna<O>
Ochiai, Yuichi
Ogata, Hironori
Ogawa, Seigo
Ogawa, ShunOgawa, Takuji
Ohfuchi, Mari
Ohiro, Tatsuo
Ohkubo, Kei
Ohno, Yutaka
Ohtsuka, Marin
Okada, Susumu
Okigawa, Yuki
Okimoto, Haruya
Okochi, Takeshi
Omachi, Haruka
Ono, Akira
Osawsa, Toru
Oshima, Takumi
Oshima, Yuki
Otsuka, Keigo
Ozeki, Sumio- 153 - 153 -

3P-9
3P-30
1P-5, 1P-11, 1P-15,
1P-29, 2P-8, 2P-13,
2P-35, 3-12, 3P-7,
3P-11, 3P-12
3P-9
1P-3
2P-34
3P-31
1P-17, 2P-17, 3P-15,
3P-22
3P-27
2P-7
1P-19, 1P-22
2P-2
2P-21
1P-14
1P-9, 2P-9
3P-9
3-7
2P-33
1P-4
3P-36
1P-2, 3P-6, 3P-17,
3P-18, 3P-28
1P-17, 3P-15
3P-21
3P-29
1P-33, 3-11
2P-26, 2P-27
1-13, 3P-8
1P-13, 2P-7, 2P-19,
3-8, 3P-13
1P-16
1P-6, 1P-28, 2-2,
2P-24, 2P-25, 3P-2,
3P-31
1-1
1P-23
3P-4
2P-18
1P-16
3P-4
1P-1
1P-7
2P-11, 3P-16
2P-12

<P>
Peterlik, Herwig
Pichler, Thomas
Prassides, Kosmas
Pu, Jiang

2P-15
2P-15
1-14
2-3, 2P-23<Q>
Qian, Yang

2-7,

< R>
Reynolds, Cole
Ruoff, Rodney S.

2-1
1S-1

< S>
Saegusa, Yusuke
Saida, Takahiro
Saito, Riichiro
Saito, Susumu
Saito, Takashi
Saito, Yahachi
Sakaguchi, Ayumi
Sakanoue, Tomo
Sakurai, Hidehiro
Sakurai, Shunsuke
Sandhaya, Koirala
Sano Yoshiaki
Sano, Masahito
Sasaki, Aiko
Sasaki, Fusako
Sasaki, Shogo
Sasaoka, KenjiSato, Hirofumi
Sato, Shintaro
Sato, Tohru
Sato, Yutaka
Sauer, Markus
Sekiguchi, Atsuko
Shimizu, Yoshiaki
Shimomura, Yuuki
Shin, Shik
Shinohara, Hisanori
Shiozawa, Hidetsugu
Shiraishi, Tomonari
Shiraki, Tomohiro
Shirakura, Toshiya

2P-6

3P-7
1P-17, 3P-15
1P-4, 1P-26, 2-1,
2P-20, 3P-34
1-7, 3P-32
1P-19, 2P-14, 2P-15
1S-3, 1P-35, 2P-28,
3P-19
2P-12
2-3
1P-1, 3P-1
1-4, 2-6, 3-5,
3P-10
1P-31
3P-6
1P-23, 1P-25
2P-5
1P-19
2P-30
1P-10
1P-18
1P-33
1P-18
3P-18
2P-15
2-6, 3-5, 3P-10
2P-26
3P-16
1-2
1-2, 2P-18, 2P-19,
3-3, 3P-21, 3P-33
1-9, 2P-15
3-12
1P-29, 2P-35, 3-12,
3P-11, 3P-12
1P-26

Shiratsuchi, Yoshihiro
Shiromaru, Haruo
Sihan, Zhao
Sorimachi, Jun-ya
Suda, Yoshiyuki
Suematsu, Shunzo
Suzuki, Hiroo
Suzuki, Nozomi
Suzuki, Ryuji
Suzuki, Shinzo

2P-31
1P-18
3P-33
3P-2
2P-26, 2P-27
3-4
1-3
2P-16
2-4
1P-16

<T>
Takabayashi, Yasuhiro
Takabayashi, Yuya
Takada, Yukihiro
Takahashi, Haruka
Takahashi, Ryosuke
Takahashi, Takuro
Takahashi, Tomoyuki
Takano, Yoshihiko
Takashi, Taniguchi
Takashima, Kengo
Takashima, Yasumasa
Takasumi, Gaku
Takato, Hotta
Takei, Kuniharu
Takenaka, Sakae
Takenobu, Taishi
Takeuchi, Masato
Takeya, Hiroyuki
Takezaki, Hiroki
Takikawa, Hirofumi
Tanaka, Fumiaki
Tanaka, Hirofumi
Tanaka, Masashi
Tanaka, Takeshi
Taniguchi, Takaaki
Taniguchi, Takashi
Taniguchi, Yoshimitsu
Taniuchi, Toshiyuki
Tan-no, Yasunaga
Tatsumi, Yuki
Togami, Makoto
Togashi, Aimi
Tominaga, Masato
Tomiyasu, Takuya
Tomonoh, Shigeki
Toshimitsu, Fumiyuki
Toyama, Kiyohiko

1-14
2P-19
2P-34
3-2
1P-32
1-6
2P-32
1-12
3P-33
2P-22, 3P-23
2P-12
3-3
3P-33
1P-12, 3P-26
3-9
2-3, 2P-23
3P-26
1-12
2P-11
2P-26, 2P-27
3-5, 3P-10
3P-29
1-12
1-10, 2-5, 2P-10
1P-30
1P-24, 3P-21
3P-3
1-2
1P-23
3P-34
2P-5
1P-3
2S-5, 2P-5
1P-34
1P-14
2P-13
1P-22

- 154 - 154 -Tsutsumi, Yusuke
Tsuzuki, Mayumi

2P-31, 3P-20, 3P-24
3P-25
1P-15
2-5

<U>
Uchibori, Itsuki
Uchibori, Yosuke
Uchimura, Jin
Uchiyama, Kouya
Uda, Nobuhide
Uda, Takushi
Ue, Hitoshi
Ueda, Yuki
Uemura, Yu
Ukhtary, Shoufie
Ushiyama, Takuya
Usuda, Eiichi

2P-17
2P-4
2P-12
3-2
3P-7
3-10
2P-26, 2P-27
2P-17, 3P-22
2P-2
2-1
1P-13
1P-14

<V>
Viet, Nguyen Xuan

1P-13

<W>
Wada, Yoshifumi
Wakahara, Takatsugu
Wakamiya, Atsushi
Wang, Chenxing
Wang, Feijiu
Wang, Zhipeng
Watanabe, Keita
Watanabe, Kenji
Watanabe, Yu-uto
Wei, Xiaojun

2P-23
1-12
3-8
3P-19
1P-31, 3-8
3P-28
3-2
1P-24, 3P-21, 3P-33
1P-25
1-10, 2-5, 2P-10<X>
Xiang, Rong
Xu, Bin

1P-21, 2-7,
1P-20

Tsuji, Masaharu<Y>
Yagami, Akifumi
Yagi, Hajime
Yamada, Jumpei
Yamada, Masayuki
Yamada, Takatoshi
Yamada, Takeo
Yamaguchi, Takahide
Yamamoto, Hiroshi
Yamamoto, Takahiro

2P-6

Yamanaka, Ayaka
Yamashita, Masahiro
Yamazaki, Yu
Yanagi, Kazuhiro
Yang, Juan
Yang, Teng
Yang, Zehui
Yasuda, Hidehiro
Yasuda, Satoshi
Yasunishi, Tomohiro
Yatoo, Mudasir Ahmad
Yokoi, Hiroyuki
Yokokura, Eita
Yomogida, Yohei
Yorozu, Shinichi
Yoshida, Keisuke
Yoshida, Masahiro
Yoshida, Masaro
Yoshida, Yukihiro
Yoshihara, Yu
Yoshimoto, Soichiro
Yoshimura, Yasuhiro
Yoshitake, Haruhiko
Yoshitake, Masayoshi
Yoza, Kenji
Yuba, Eiji
Yudasaka, Masako
Yuge, Ryota
Yumura, Motoo
Yunus, Rozan Mohamad

2-2
2P-14
3P-1
1P-7, 2P-33, 3S-8
1-11
3P-34
1P-29, 3P-11, 3P-12
1-8
1P-32, 2P-4, 3P-30
2P-19
2P-14
1P-30
3P-17
1-10, 2-5, 2P-10
1P-19
3P-14
3-10
2-4
3P-3
2P-9
2P-21
2P-21
3P-28
2P-2
3-2
1-5
1-10, 1P-22
1P-22
1-4
3P-20, 3P-24<Z>
Zadik, Ruth H.
Zhang, Minfang
Zhang, Yijin
Zhang, Zhenyu

1-14
1-10
2-4
1-11

2P-2
3-3
2P-17, 3P-22
3P-3
1-1
1P-14, 2-6, 3-5,
3P-10
1-12
2P-16, 3P-14
1P-10, 2P-22, 3P-23- 155 - 155 -複写をご希望の方へ
フラーレン・ナノチューブ・グラフェン学会は、本誌掲載著作物の複写に関する権利を一般社団
法人学術著作権協会に委託しております。
本誌に掲載された著作物の複写をご希望の方は、（社）学術著作権協会より許諾を受けて下さい。
但し、企業等法人による社内利用目的の複写については、当該企業等法人が社団法人日本複写権センター（（社）学術著作権協会が社内利用目的複写に関する権利を再委託している団体）と包括複写許諾契約を締結している場合にあっては、その必要はございません（社外頒布目的の複写については、許諾が必要です）。
権利委託先：一般社団法人学術著作権協会〒107-0052 東京都港区赤坂 9-6-41 乃木坂ビル 3 階
電話：03-3475-5618
FAX：03-3475-5619
E-Mail：info@jaacc.jp
注意：複写以外の許諾（著作物の引用、転載・翻訳等）に関しては、（社）学術著作権協会に委託致しておりません。直接、フラーレン・ナノチューブ・グラフェン学会へお問い合わせください。

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the copyright holder has consigned the management of the copyright regarding reprographic
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Users in countries or regions in which JAC has no bilateral agreement are requested to apply forthe license to JAC.
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Address：9-6-41 Akasaka, Minato-ku, Tokyo 107-0052 Japan
Website：http://www.jaacc.jp/
E-mail：info@jaacc.jp
TEL：81-3-3475-5618
FAX：81-3-3475-5619

2015 年 9 月 7 日発行

第 49 回フラーレン・ナノチューブ・グラフェン総合シンポジウム
講演要旨集＜フラーレン・ナノチューブ・グラフェン学会＞〒113-8656 東京都文京区本郷 7-3-1
東京大学大学院工学系研究科 機械工学専攻
丸山研究室内
Tel：03-3830-4848
Fax：03-3830-4848
E-mail：fntg@photon.t.u-tokyo.ac.jp
URL：http://fullerene-jp.org
印刷 / 製本 門司印刷（株）

試 薬

診断薬

理化学機器

医療機器
医療材料

器 材

ライフサイエンスをはじめとする科学技術は
私たちの生活と未来を大きくリードし続けています。
正晃は、医療・研究分野の総合商社として培ったノウハウをお客様にとっての"パーフェクト"を起点に大学や官公立試験所､

病院臨床検査室や検大学・官公庁・企業の試高度化が進む医療現場

大学・企業などの研究

研究所をはじめ､各企査センターなどに、
豊験研究機関へ国内外一に､診断に必要とされる機関､病院・検査セン業の研究に不可欠な試

富な専門知識をベー流メーカーの最先端機

各種検査機器と治療用

ターなどの医療機関で薬とそれに関連する最スに、最適な診断薬を器の販売と関連情報の機器などを専門的にサの検体採取から保存ま

新の情報をタイムリー

最新の情報・技術とと提供およびメンテナン

ポート。
また医療消耗品

でに必要な器材を扱っに提供しています。

もに提供しています。

スを行っています。

も提供しています｡

ています。

化成品
電子材料

I Tビジネス

健康食品

多彩な分野へ柔軟な対応で貢献いたします。

コンピュータ家電
本

産業や生活の幅広い分

医療や研究分野向けに｢健康管理時代｣のニー

ＯＡ、
ＡＶ機器、
テレビや

野で必要とされる化学

画像診断・データベース

ズに応えて、
一般向け冷蔵庫からパソコン､工業製品や食品添加物

ソフトや検査業務支援にオリジナルのフコイ

デジカメなど、さまざま

および I C 生産に欠かシステムなどを開発・提ダン製品などの健康食な一流メーカーの製品せない洗浄剤・電子材

供し、最先端の研究を品を開発・販売していを取り扱っています。

料などを扱っています｡

支援しています。

ます。

社

事業所

福岡市東区松島3丁目34番33号〒813-0062
TEL：092-621-8199(代)FAX：092-611-4415
福岡第一

福岡第二

北九州

久留米

大

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JEM-ARM300F
JEM-ARM300Fは、JEM-ARM200Fで培った高安定化技術を基に開発された装置です。
冷陰極電界放出電子銃を標準搭載し、STEMおよびTEMに球面収差補正装置が搭載可能な最高加速電圧300 kVの世界最高峰の超高分解能電子顕微鏡です。
300 kV STEM Imaging（GaN[211]）
暗視野像

63 pm

Ga-Ga 原子カラム

63 pm

1 nm

80 kV TEM Imaging（グラフェン）

1 nm

本社・昭島製作所

営業企画室

東京都昭島市武蔵野3-1-2

東京都千代田区大手町2-1-1

http://www.jeol.co.jp/

TEL
（042）
543-1111

TEL（03）
6262-3560 │ 西日本ソリューションセンター■東

京 電子光学機器営業グループ TEL（03）6262-3581 │ 分析機器営業グループ TEL（03）6262-3582 │ 産業機器営業部
半 導 体 機 器 営 業 部 TEL（042）
528-3491 │ 医用機器営業グループ TEL（03）6262-3583

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TEL（03）6262-3570

TEL
（045）
474-2181 │ ■ 名古屋
TEL
（092）
411-2381

TEL（052）
581-1406

RealStandard
NRS series
グラフェンの 2D イメージング
ラマン分光法により、2D/G バンド比にてグラフェンの層数を可視化できます。
単層

10μm
HOPG

レーザラマンの新たな時代
ラマン分光法は、赤外分光法と同じ振動スペクトル測定法ですが、サンプリングが赤外分光法に比べ容易で、赤外顕微鏡では不可能な微小部位の測定が可能などの特長がある反面、最適測定条件の検討
や装置の光学調整等に、ある程度のスキルが要求されていました。
NRS-5000/7000 シリーズは、顕微レーザラマン分光光度計に要求される性能・機能を網羅し、システムの制御や光学調整等を自動化することにより、精度の高いデータを安定して取得することができます。波数とラマン強度の自動補正、測定に関するアドバイス機
能を搭載し、さらに高速イメージングへの拡張性も備えています

2D バンド

G バンド

HOPG

多層

Int.

単層グラフェン
2800

2000
Raman Shift [cm-1]

1200

NRS-5000/7000series

レーザラマン分光光度計／ Laser Raman Spectrometer

NRS-5000/7000series の特長

NRS-5000series (5100/5200)

多彩なアプリケーションに対応した焦点距離300mmの高性能モノクロメータを採用し、グ
レーティングを最大3枚まで搭載できます。低波数測定ユニットを搭載したNRS-5200は、10cm-1の低波数領域まで測定できます。

■ 異物分析から構造解析まで幅広く対応■ スペクトルクオリティにこだわったハイエンドモデル■ 新世代 SPRIntSイメージングにより高速イメージング＆3D イメージング■ 1064nm レーザ＋InGaAs 検出器対応（デュアル検出器にも対応）■ 新機能 DSF（Dual Spatial Filtration）で空間分解能がさらにアップ■ 段違いの操作性、顕微スペクトル測定プログラム■ 1 クリックで蛍光除去、自動蛍光補正■ 誰でも楽々ラマン測定、ユーザーアドバイス機能＆フルオートシステム■ 容易に成分分析ができるイメージングモデル解析プログラム（オプション）

NRS-7000series (7100/7200)

500mmの焦点距離を持ち、高分解測定を実現しています。グレーティングは最大4枚まで搭載することができます。低波数測定ユニットを搭載したNRS-7200は、超低迷光により5cm-1の低波数領域まで測定できます。

誘導体化フラーレン用HPLCカラム

COSMOSIL Buckyprep-D
R● 誘導体化フラーレン用HPLCカラム● トルエン移動相中で誘導体化フラーレンが分離可能■C60インデン付加体の分析例
C60インデンは誘導体化フラーレンの一種であり、有機薄膜太陽電池のn型半導体材料として注目されている化合物です。
コスモシール Buckyprep-Dを用いることにより高い分離性能が得られます。

COSMOSIL Application Data
Buckyprep

Buckyprep-D

Column:Column size: 4.6mmI.D.-250mm
Mobile phase: Toluene
Flow rate:
1.0 ml/min
Temperature: 30°C
Detection:
UV 325nm
Sample:Inj.Vol.:

C60 [Indene]2 (1.0mg/ml)
1.0µl

NACALAI TESQUE, INC

Data courtesy of Yusuke Tajima, Dr. Sci.
Organic Optoelectronics Laboratory, RIKEN (Institute of Physics and Chemistry)■Buckyprepシリーズの用途

フラーレン分離のスタンダードカラム

COSMOSIL Buckyprep

誘導体化フラーレンの分離

COSMOSIL Buckyprep-D

金属内包フラーレンの分離

COSMOSIL Buckyprep-M・誘導体化フラーレン (Buckyprep-D)

・金属内包フラーレン (Buckyprep-M)

COSMOSIL Application DataCOSMOSIL Application Data

Column:Buckyprep-D
Column size: 4.6mmI.D.-50mm
Mobile phase: Toluene
Flow rate:
1.0 ml/min
Temperature: 30°C
Detection:
UV325nmColumn:Buckyprep-M
Column size: 4.6mmI.D.-250mm
Mobile phase: Toluene
Flow rate:
1.0 ml/min
Temperature: 30°C
Detection:
UV312nmSample:Inj.Vol.

(0.125mg/ml)
1; C602; C70(0.250mg/ml)
3; [6,6]-Phenyl-C61 Butyric Acid Methyl Ester[PCBM](0.125mg/ml)
4; [6,6]-Phenyl-C71 Butyric Acid Methyl Ester[ [70]PCBM ](0.375mg/ml)
1.0µl
NACALAI TESQUE, INC

Sample:Sc2@C76(I)Sc2@C78
Sc2@C80(I)C86

Sample courtesy of Prof. H.Shinohara,
Department of chemistry, Nagoya University

C86

Sc
Sc2@C76(I)C84
C84

Sc2@C78
Sc2@C80(I)NACALAI TESQUE, INC

詳しい情報はWeb siteをご覧ください。

ナカライテスク株式会社〒604-0855

京都市中京区二条通烏丸西入東玉屋町498

価格 ・ 納期のご照会 フリーダイヤル 0120-489-552
製品に関するご照会 TEL : 075-211-2746 FAX : 075-211-2710

Web site :http://www.nacalai.co. jp

LF プラズマクリーナー『CUTE・COVANCE』シリーズ：表面クリーニングに最適な LF 帯の周波数を使用したプラズマクリーナーです。UV オゾンクリーナーや RF プラズマ装置を使用している方やウエット処
理で表面処理をしている方に最適です。主な用途:PDMS ポンディング・基盤洗浄、SEM/TEM 等の前処理■主な用途：単相・複相組織解析、材料の破壊機構解明（ボイド・亀裂）、欠陥評価（介在物、空洞など）
材料内部面の解析（相界面、粒界）〒812-0054 福岡市東区馬出１丁目１８番３号（TEL:092-641-8451･FAX:092-641-8786）http://www.shinkouseiki.co.jp

カーボンナノチューブの分離・精製にバイオ研究＆

日立の超遠心機シリーズ！
世界トップクラスの高性能、床置き・卓上、
日立なら選べます！

の強い味方

ナノ粒子研究卓上超遠心機

小形超遠心機
エコでスリムな
床置きタイプコンパクトなボディに
世界トップクラスの性能

Series
世界最高速150,000rpm＊（CS150FNX）
世界最大遠心加速度1,050,000×ｇ＊（CS150FNX）
クラス最静音45ｄB(A)＊
省スペース床置きタイプの小形超遠心機は日立だけ！

世界最高速150,000rpm＊
世界最大遠心加速度1,050,000×g＊
世界最小コンパクトサイズ＊
クラス最静音45ｄB(A)＊特長

特長●短い真空待ち時間●サンプルのバランスは目分量でOK!
●ロータは全て載せるだけ！
●7mlスイングロータが回せます。

●世界標準の安全規格CEマーキング適合製品●サンプルのバランスは目分量でOK!
●ロータは全て載せるだけ！（ロータクイックセッティング方式）●エコ対応省エネモデル●7mlスイングロータ（S50ST）
が回せます。
●2012年度グッドデザイン賞 受賞！

■仕様

■仕様
CS150FNXCS120FNX

CS100FNX

最高回転速度（rpm）

150,000

120,000

100,000

最高回転速度（rpm）

150,000

最大遠心加速度（xg）

1,050,000

771,000

571,000

最大遠心加速度（xg）

1,050,000

サイズ（W×D×H mm）

590×582×408

形

名サイズ（W×D×H mm）
質

形

440×520×910
105

量（kg）

標準価格（税別）￥5,500,000

量（kg）

97

標準価格（税別）￥6,000,000

質￥4,900,000￥4,300,000

CS150NX

名＊（2015年5月現在
当社調べによる）■ロータ仕様S110AT

S50A

S50ST

最高回転速度（rpm）

110,000

50,00050,000容量（ml）×本数（本）5.0×8

30.0×6

7.0×4￥1,100,000
S140AT￥950,000
S58A￥1,500,000
S55A2

形

名

標準価格（税別）形

S110AT

S50A

バイオ研究

＆

ナノ粒子研究S58A

S140AT

S50ST

S55A2

名

最高回転速度（rpm）

140,000

58,00055,000容量（ml）×本数（本）2.0×1013.5×8

1.5×12￥1,290,000￥1,000,000￥750,000

標準価格（税別）のスタンダード

超遠心機
遠心分離が楽しくなる
機能満載！

Series

クラス最高速100,000rpm＊（CP100NX）
クラス最大遠心加速度803,000×g＊（CP100NX）

P70AT

P45AT

P21A2

P40ST

P28S

P100AT2＊（2015年 5月 現在当社調べによる）特長●離れていても運転状況がわかるLEDインジケーター搭載！
●ロータ寿命自動管理と寿命延長機能搭載（RLMアダプタ付ロータ）●カラー液晶タッチパネルを操作しやすい前面に配置●ユーザー支援ソフト「」標準装備●2014年度グッドデザイン賞受賞！

■仕様
CP100NX

CP90NX

最高回転速度（rpm）

100,000

90,00080,000最大遠心加速度（xg）

803,000

700,000

615,000

形

名

サイズ（W×D×H mm）
質■ロータ仕様
P70AT

P45AT

P21A2

P40ST

P28S

P100AT2

790×690×880（テーブルまでの高さ863）

最高回転速度（rpm）

70,00045,00021,00040,00028,000100,000390

容量（ml）×本数（本）

40×8

94×6

230×6

13×6

40×6

6.5×8

量（kg）

標準価格（税別）

CP80NX￥11,000,000￥9,500,000￥8,000,000形

名

標準価格（税別）￥2,200,000 ￥2,350,000 ￥1,800,000 ￥2,490,000 ￥2,350,000 ￥2,250,000※本広告に掲載した以外にもロータを取り揃えております。最寄りの営業所へお気軽にお問い合せください。

ライフサイエンス機器事業部

日立遠心機お客様相談センター

0120-024125

受付時間 9：00〜12：00 / 13：00〜17：00（土・日・祝日・弊社休業日除く）

東日本地区 03-6738-0860

西日本地区 0798-23- 4125

●製品の仕様、外観および価格は、改善のため予告なく変更する場合があります。
●標準価格は仕様や構成により異なります。
●全て税別価格となります。
●安全のために使用環境、使用条件、据付条件が制限される場合があります。

先進をゆく顕微鏡が、生体/ライブセルイメージングの新時代を切り拓く。
微細な世界を見る技術が、また新たな次元に到達しました。
常に頂点を目指して挑戦し続けるニコンの高度な顕微鏡技術が、生命科学の明日を揺り動かします。

++

共焦点レーザー顕微鏡システム A1R +■ガルバノ・高速レゾナントの2種類のスキャナーを搭載し、高速＆高画質なイメージングが可能に。

高速多光子共焦点レーザー顕微鏡システム

A1R MP+■独自の高速スキャニング技術と高感度受光技術
により、600μm以上の深部からの画像を420枚/秒（512×32画素）で可視化します。

広帯域・高解像対物レンズ λS対物レンズ■超低屈折率を誇るニコン独自の薄膜技術、ナノクリスタルコートを採用。
■広範囲波長での高い透過率と同時に、広い色収差補正を実現しています。

λS対物レンズ

超解像顕微鏡

N-SIM/N-STORM■115nmの解像度で、0.6秒/枚＊での連続画像取得が可能な「N-SIM」■従来製品の約10倍（約20nm）の分解能を実現した「N-STORM」＊2D-SIM/TIRF-SIMモードで最速の場合。
販売元

カタログ・パンフレット等のご請求は、（株）
ニコンインステック バイオサイエンス営業本部へ
108-6290 東京都港区港南2-15-3（品川インターシティ C 棟） 電話（03）
6433-3982■フリーダイヤル 0120-586-617
www.nikon-instruments.jp/

溶液中の物質のナノレベル微細化・分散

昨今のナノ・テクノロジーの発展及び粉体関連技術の発展により、より微細な粒子に対する分散処理の要望が増えてまいりました。
超音波ホモジナイザーを使用し、均質な乳化分散処理を行い、安定させることにより製品の機能は向上します。一次粒子の凝集力にも拠りますが概ね 100nm 程度までの分散力があります。
ブランソン社の超音波ホモジナイザーは、コンバーター部での超音波振動変換効率が 98%以上ある為、ホーン先端部の振幅の安定性が高く、強力なキャビテーションが得られ、高効率で、再現性の高い破砕・分散処理が可能です。
ブランソン社では卓上型実験用 20kHz 機・40kHz 機、及び 1,100W～
3,300W の高出力機で大量処理も可能なシステムも用意しております。

超音波ホモジナイザー (20kHz)
BRANSON SONIFIER シリーズ

微量用・超音波ホモジナイザー
BRANSON

SLPe(40kHz)

大量処理システム

主なアプリケーション
分散
カーボンナノチューブ 有機・無機顔料 感光体 記録材料 磁性粉 シリカ アルミナ セラミック
ポリマー ラテックス 製紙 ファンデーション 光触媒 触媒 半導体 電子基盤 液晶 セメントワクチン 体外診断薬 歯磨き粉 貴金属 金属 宝石 タイヤ 発酵菌類 その他
乳化
エマルジョン製剤 農薬 トナー ラテックス 界面活性剤 クリーム 乳液 クリーム 等------------------------------------------------------

～輝く未来のために～
私達は、全ての研究者のサポートを致します。
●研究用試薬●理化学機器●工業薬品の総合商社

サンケイ化学薬品株式会社
福岡県福岡市南区大楠 2-6-24
TEL(092)531-2735・FAX(092)522-0768
E-mail：sankyakuhin@rio.odn.ne.jp

Graphene on SiC substrate
測定概念図

Optical nano‐imaging of gate‐tunablegraphene plasmons
J. Chen et al.,Nature 487, p.77 (2012)

実験データ ( 6H‐SiC λ0=9.7μm )表面伝搬するプラズモンを
ナノスケールで可視化

LDOS計算結果

λ0=9,200nm
ε =2.9SiC

λ0=9,681nm
ε =2.0SiC

λ0=10,152nm
ε =0.7SiC

励起波長を変えてグラフェン上のプラズモンの波長を制御

分析初心者の方にも安定操作が確約された
唯一市販されているアパーチャレス近接場顕微鏡
再現性100%の近接場測定を約束する
特許技術：Background suppression technique
高い操作性を実現する測定ソフトneaSCANを組み込んだAFMユニット
どんなAFM向けサンプルに対しても測定可能

洗練された第三世代neaSNOM（非破壊サンプル測定も可能）フロンティアカーボンのフラーレン製品
純度(HPLC面積％、代表値）
内容他

最低数量
（ｇ）
10
2
2
1
1

ST

99
99.5
99.5/ 昇華精製品
99.9/ 昇華精製品
99.9/昇華精製/単結晶品
97

フラーレン C70

SU

98/昇華精製品

0.5

nanom mix

ST

C60,C70,その他高次フラーレンの混合物

50

銘

柄

分子構造
ST
TL
SU
SUH
SC

nanom purple
フラーレン C60

nanom orange

混合フラーレン

nanom spectra[60]PCBM(phenyl C61-butyric acid methyl
ester)※微粒化品（ ST-F）もあります
O

99

1

E100H

99.5

1

E102

99.9

0.5

98/異性体トータル

1

E100

O

nanom spectra E400
bis[60]PCBM※位置異性体の混合物(bis-phenyl C61-butyric acid methyl ester)

nanom spectra

E110(phenyl C71-butyric acid methyl
ester)

E112[70]PCBM

199/異性体トータル

O
O※位置異性体の混合物

主成分

99.5/異性体トータル※位置異性体の混合物

nanom spectra Q100
2[60]インデン２付加体

0.599/異性体トータル1※位置異性体の混合物

HO

水酸化フラーレン

HOnanom spectra D100

C60OHn n=10を主成分とする混合物(n = ca.10)

1

H

nanom spectra A100

H

水素化フラーレン

n/2

0.5

99

[60]インデン付加体

nanom spectra Q40 0

0.5

n/2

C60Hn n=30を主成分とする混合物(n = ca. 30)※銘柄、取扱数量等は予告無く変更する場合がございます。 ※試験研究用途向けです。

当社製品は、下記から購入いただけます。直接お問い合わせください。
・関東化学株式会社 試薬事業本部〒103-0022 東京都中央区日本橋室町2-2-1 TEL:03-6214-1090 FAX:03-3241-1047
http://www.kanto.co.jp E-mail:reag-info@gms.kanto.co.jp
・中山商事株式会社 筑波営業所 （担当 落合敬宝）〒300-2651茨城県つくば市鬼ケ窪1139-1 TEL:029-847-7355 FAX:029-847-1923
E-mail:nst15@nakayama-co.jp＜本資料に関するお問い合わせ先＞
フロンティアカーボン株式会社 【担当：梶原】〒100-8086 東京都千代田区丸の内2-6-1丸の内パークビルディング24階
TEL:03-3210-2620 FAX:03-3210-4606 http://www.f-carbon.com※弊社へのお問い合わせはHPよりお願いいたします。

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