第回 フ ラ ー レ ン・ナノ チュー ブ・グ ラ フェン 総 合 シンポ ジウ ム 講 演 要 旨 集

56
44

平成

年３月 日〜 日

31
25

３

２
11

13
５

F NTG

Research Society

第 56 回フラーレン・ナノチューブ・グラフェン
総合シンポジウム

The 56th Fullerenes-Nanotubes-Graphene General Symposium

講演要旨集
Abstracts2019 年 3 月 2 日（土） ～ 5 日（火）東京大学 伊藤国際学術研究センター
The University of Tokyo, ITO INTERNATIONAL RESEARCH CENTER
主催 フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society
共催 ・ 後援
日本化学会
The Chemical Society of Japan東京大学大学院工学系研究科 School of Engineering, The University of Tokyo
東京大学 CIAiS Consortium for Innovation of Advanced Integrated Science (UTokyo)
東京大学 GMSI Graduate Program for Mechanical Systems Innovation (UTokyo)
協賛
日本物理学会
応用物理学会
高分子学会
電気化学会

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

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Abstract of
The 56 Fullerenes-Nanotubes-Graphene General Symposiumth

Sponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of Japan

School of Engineering, The University of Tokyo

Consortium for Innovation of Advanced Integrated Science (UTokyo)
Graduate Program for Mechanical Systems Innovation (UTokyo)
Supported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

Date : March 2nd(Sat.) – March 5th(Tue.), 2019
Place : The University of Tokyo, ITO INTERNATIONAL RESEARCH CENTER

7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656

Presentation Time : Special Lecture (25 min presentation + 5min discussion)

Invited Lecture (10 min presentation + 5min discussion)
General Lecture (10 min presentation + 5min discussion)
Poster Preview (1 min presentation without discussion)

第 56 回フラーレン･ナノチューブ･グラフェン総合シンポジウム
講演要旨集
主催 : フラーレン･ナノチューブ･グラフェン学会
共催･後援 : 日本化学会
東京大学大学院工学系研究科
東京大学 CIAiS東京大学 GMSI
協賛 : 日本物理学会、応用物理学会、高分子学会、電気化学会
日時 : 平成 31 年 3 月 2 日(土)～3 月 5 日(火)場所 : 東京大学 伊藤国際学術研究センター〒113-8656 東京都文京区本郷 7-3-1

伊藤謝恩ホール

発表時間 : 特別講演
（発表 25 分 + 質疑応答 5 分）
招待講演
（発表 10 分 + 質疑応答 5 分）
一般講演
（発表 10 分 + 質疑応答 5 分）
ポスタープレビュー（発表 1 分・質疑応答 なし）

展示団体御芳名 (五十音順、 敬称略）
(株） 島津製作所(株） セントラル科学貿易
ナカライテスク (株）日本シノプシス （同）（株） 日本レーザー（株） 日本ローパー(株） 堀場製作所(株） 名城ナノカーボン

広告掲載団体御芳名 (五十音順、 敬称略）
アイクストロン (株)(株) コロナ社(株） セントラル科学貿易
ソーラボジャパン （株）
日本電子 （株）（株） 日本レーザー(株） 日本ローパー

Contents
Time Table ・・・・・・・・・・・・・・・・・・ i
Chairperson ・・・・・・・・・・・・・・・・・iii
ProgramJapanese ・・・・・・・・・・・・ iv
English ・・・・・・・・・・・・ xix
Abstracts
Special Lecture ・・・・・・・・・・ 1
Invited Lecture ・・・・・・・・・ 9General Lecture ・・・・・・・・・ 15
Poster Preview ・・・・・・・・・・49
Author Index ・・・・・・・・・・・・・・・・163

目次
早見表 ・・・・・・・・・・・・・・・・・・・ i
座長一覧・・・・・・・・・・・・・・・・・・・iii
プログラム 和文・・・・・・・・・・・・・・・ iv
英文・・・・・・・・・・・・・・ xix
講演予稿
特別講演・・・・・・・・・・・・・ 1
招待講演・・・・・・・・・・・・・ 9
一般講演・・・・・・・・・・・・・15
ポスター発表・・・・・・・・・・・49
発表索引・・・・・・・・・・・・・・・・・・ 163

プログラム早見表
３月２日 （土）

３月３日 （日）受付開始 8：30～
講演開始 9：30～

9:00 招待講演（Esko I. Kauppinen ）9:00-9:15
9:15
一般講演 3件

9:00(ナノチューブの物性 ・ ナノ
チューブの応用） 9:15-10:00

9:30

9:30 招待講演（Yan Li） 9:30-9:45
9:45
一般講演 2件(内包ナノチューブ） 9:45-10:15

10:15
10:30
11:00

休憩 10:15-10:30
特別講演 （北浦 良）
10:30-11:00
一般講演 2件
(原子層）

11:30
12:15

13:30

10:00
10:15
10:45

11:00-11:30

ポスタープレビュー( 1P-1 ～ 1P-38 )11:30-12:15
昼食(幹事会）
12:15-13:30
ポスターセッション【 多目的スペース 】
13:30-15:15

11:30
12:15

13:30

13:30-14:00 若手奨励賞候補審査優先時間

15:15 招待講演（河野 淳一郎）15:15-15:30
15:30
一般講演 3件(ナノチューブの物性 ・ ナノチュー
ブの生成と精製） 15:30-16:15

16:15
16:30
17:00

休憩 16:15-16:30
特別講演 （若林 克法）
16:30-17:00
一般講演 3件(グラフェンの応用 ・ グラフェンの物性）
17:00-17:45

17:45
18:00

休憩 17:45-18:00
チュートリアル講師： （小久保 研）
AIST【 伊藤謝恩ホール 】
18:00-19:30

３月４日 （月）受付開始 8：30～
講演開始 9：00～(ナノチューブの生成と精製 ・グラフェンの応用） 9:30-10:15

休憩 10:00-10:15
特別講演 （竹延 大志）
10:15-10:45
一般講演 3件

10:15
10:30

(原子層）

11:00

10:45-11:30
ポスタープレビュー( 2P-1 ～ 2P-38 )11:30-12:15
昼食
12:15-13:30

ポスターセッション【 多目的スペース 】
13:30-15:15

授賞式
15:15-16:00

16:00

特別講演 （本間 芳和）
16:00-16:30
一般講演 3件

16:30(ナノチューブの物性）

16:30-17:15
17:15
休憩 17:15-17:30
17:30 招待講演（井関 隆之）17:30-17:45
17:45
一般講演 3件

休憩 10:15-10:30
特別講演 （斎藤 毅）
10:30-11:00
一般講演 2件(ナノチューブの応用） 11:00-11:30

11:30
12:15

13:30

13:30-14:00 若手奨励賞候補審査優先時間

15:15

受付開始 8：30～
講演開始 9：00～
特別講演 (Fei Wei)
9:00-9:30
一般講演 3件

ポスタープレビュー( 3P-1 ～ 3P-37 )11:30-12:15
昼食
12:15-13:30

ポスターセッション【 多目的スペース 】
13:30-15:15
13:30-14:00 若手奨励賞候補審査優先時間

15:15 特別講演 （Alberto Bianco）
15:15-15:45
15:45
一般講演 4件(金属内包フラーレン ・フラーレンの化学 ・ フラーレン）

15:45-16:45
16:45 招待講演（Erik Einarsson）16:45-17:00
17:00
一般講演 2件(グラフェンの応用） 17:00-17:30

17:30(ナノチューブの応用 ・ ナノ炭素
粒子 ・ その他） 17:45-18:30

18:30
18:45

休憩 18:30-18:45
懇親会【 多目的スペース 】
18:45-20:30

19:30
講演会場 伊藤謝恩ホール
特別講演 発表２５分・質疑５分
招待講演 発表１０分・質疑５分
一般講演 発表１０分・質疑５分
ﾎﾟｽﾀｰﾌﾟﾚﾋﾞｭｰ 発表１分・質疑なし

３月５日 （火）第１２回ﾅﾉｶｰﾎﾞﾝ実用化推進研究会【 伊藤謝恩ホール 】

20:30

10:00-17:00

iTime table
March 2 (Sat.)

March 3 (Sun.)

Registration begins at 8:30
Lectures begin at 9:30

Registration begins at 8:30
Lectures begin at 9:00
9:00 Invited Lecture（Esko I. Kauppinen）9:00-9:15
9:15
General Lectures [3]9:30 Invited Lecture（Yan Li） 9:30-9:45
9:45
General Lectures [2](Endohedral nanotubes） 9:45-10:15

10:15
10:30

Coffee Break 10:15-10:30
Special Lecture（Ryo Kitaura） 10:30-11:00
11:00
General Lectures [2](Properties of nanotubes ・Applications of nanotubes）9:15-10:00

10:00
10:15

Coffee Break 10:00-10:15
Special Lecture（Taishi Takenobu）10:15-10:45
10:45
General Lectures [3](Atomic Layers）(Atomic Layers） 11:00-11:30

11:30
12:15

13:30

Poster Preview( 1P-1 through 1P-38 )11:30-12:15
Lunch(Administrative meeting)
12:15-13:30
Poster Session【 Event Space 】
13:30-15:15

11:30
12:15

13:30

During 13:30-14:00, please give

10:45-11:30
Poster Preview( 2P-1 through 2P-38 )11:30-12:15
Lunch
12:15-13:30

Poster Session【 Event Space 】
13:30-15:15

Applications of graphene） 9:30-10:15

10:15
10:30

Coffee Break 10:15-10:30
Special Lecture（Takeshi Saito） 10:30-11:00
11:00
General Lectures [2](Applications of nanotubes）11:00-11:30

11:30
12:15

13:30

Poster Preview( 3P-1 through 3P-37 )11:30-12:15
Lunch
12:15-13:30

Poster Session【 Event Space 】
13:30-15:15
During 13:30-14:00, please givepriority to selection of candidates

priority to selection of candidates

priority to selection of candidates

for Young Scientist Poster Award

for Young Scientist Poster Awardof nanotubesgraphene )15:30-16:15

Coffee Break 16:15-16:30
Special Lecture

15:15

Award Ceremony
15:15-16:00

Special Lecture（Alberto Bianco）15:15-15:45
15:45
General Lectures [4]16:00

Special Lecture(Endohedral metallofullerenes
・ Chemistry of fullerenes ・Fullerenes)
15:45-16:45

16:30

General Lectures [3](Properties of nanotubes）

General Lectures [3]16:30-17:15
Coffee Break 17:15-17:30

Coffee Break 17:45-18:00
Tutorial
Lecturer : （Ken Kokubo）
AIST【 Ito Hall 】
18:00-19:30

15:15（Yoshikazu Homma）16:00-16:30（Katsunori Wakabayashi）16:30-17:00(Applications of graphene ・Properties of graphene) 17:00-17:45

17:45
18:00

and purification of nanotubes ・During 13:30-14:00, please giveof nanotubes ・ Formation and purification

17:00

Registration begins at 8:30
Lectures begin at 9:00
9:00
Special Lecture(Fei Wei) 9:00-9:30
9:30 General Lectures [3] (Formation

for Young Scientist Poster Award

15:15 Invited Lecture（Junichiro Kono)15:15-15:30
15:30 General Lectures [3] (Properties
16:15
16:30

March 4 (Mon.)

17:15
17:30 Invited Lecture（Takayuki Iseki） 17:30-17:45
17:45 General Lectures [3] (Applications

16:45 Invited Lecture（Erik Einarsson）16:45-17:00
17:00
General Lectures [2](Applications of graphene）17:00-17:30

17:30

of nanotubes ・ Carbon nanoparticles

17:45-18:30
Coffee Break 18:30-18:45
Banquet【 Event Space 】
18:45-20:30

・ Other topics）

18:30
18:45

19:30
March 5 (Tue.)
The 12th NanoCarbon Application Forum【 Ito Hall 】

10:00-17:00

20:30
Place : Ito Hall
Special Lecture : 25 min (Presentation) + 5 min (Discussion)
Invited Lecture : 10 min (Presentation) + 5 min (Discussion)
General Lecture : 10 min (Presentation) + 5 min (Discussion)ii

座長一覧 (Chairpersons)
3月2日 (土)セッション
招待講演(Yan Li）
一般講演
特別講演(北浦 良）
一般講演
ポスタープレビュー
招待講演(河野 淳一郎）
一般講演
特別講演(若林 克法）
一般講演
チュートリアル(小久保 研）

(敬称略）

時
間
9:30 ～9:45
9:45 ～10:15
10:30 ～ 11:00
11:00～ 11:30
11:30 ～ 12:15
15:15 ～ 15:30
15:30 ～ 16:15
16:30 ～ 17:00
17:00 ～ 17:45
18:00 ～ 19:30

座
長
丸山 茂夫
竹延 大志
井ノ上 泰輝 / 中西 勇介
加藤 雄一郎
長汐 晃輔
丸山 茂夫

3月3日 (日)セッション
招待講演(Esko I. Kauppinen）
一般講演
特別講演(竹延 大志）
一般講演
ポスタープレビュー
特別講演(本間 芳和）
一般講演
招待講演(井関 隆之）
一般講演

時
間
9:00 ～ 9:15
9:15 ～10:00
10:15 ～10:45
10:45 ～ 11:30
11:30 ～ 12:15
16:00 ～ 16:30
16:30～ 17:15
17:30 ～ 17:45
17:45 ～ 18:30

座
長
北浦 良
高井 和之
大町 遼 / 杉目 恒志
山本 貴博
齋藤 理一郎

3月4日 (月)セッション
特別講演(Fei Wei）
一般講演
特別講演(斎藤 毅）
一般講演
ポスタープレビュー
特別講演(Alberto Bianco）
一般講演
招待講演(Erik Einarsson）
一般講演

時
間
9:00 ～ 9:30
9:30 ～ 10:15
10:30 ～ 11:00
11:00～ 11:30
11:30 ～ 12:15
15:15 ～ 15:45
15:45 ～ 16:45
16:45 ～ 17:00
17:00 ～ 17:30

iii

座
長
項 榮
野田 優
廣谷 潤 / 辻 享志
湯田坂 雅子
千足 昇平

３月 ２日 （土）特別講演
発表 ２５分 ・ 質疑応答 ５分
招待講演
発表 １０分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし

招待講演 ( 9:30-9:45 )1I-1

Atomic Scale Stability of Nano-Sized Tungsten-Cobalt Intermetallic Compounds in Reactive
Environment at High Temperature

9* Yan Li, Feng Yang

一般講演 ( 9:45-10:15 )内包ナノチューブ
1-1

Carbyne@CNT on a film scale formed after field emission: Characterization by Raman and
TEM

15

Satoshi Toma, Koji Asaka, Satoshi Kashiwaya, Tomonari Wakabayashi, * Yahachi Saito
1-2

Isolation of Single-wired Transition Metal Monochalcogenides by Carbon Nanotubes

16* Yusuke Nakanishi, Masataka Nagata, Shivani Shukla, Zheng Liu, Yung-Chang Lin,
Takuma Shiga, Yuto Nakamura, Takeshi Koyama, Hideo Kishida, Kazu Suenaga,
Hisanori Shinohara＞＞＞＞＞＞＞ 休憩 ( 10:15-10:30 ) ＜＜＜＜＜＜＜特別講演 ( 10:30-11:00 )1S-1

TMD原子層およびそのヘテロ構造

1* 北浦 良一般講演 ( 11:00-11:30 )原子層
1-3

キャリアドーピングによる単層WSe2における励起子バレー分極の増大

17* 篠北 啓介, 王 暁凡, 宮内 雄平, 渡邊 賢司, 谷口 尚, 松田 一成
1-4

STM images of graphene/C-doped h-BN heterostructures from first-principles
electronic-structure calculations

18* 芳賀 太史, 藤本 義隆, 斎藤 晋

ポスタープレビュー ( 11:30-12:15 )若手奨励賞候補（☆） 若手奨励賞候補

1P-1

Synthesis and characterization of fullerene-based molecular torsion balance for investigating
noncovalent fullerene–arene interaction☆

* 成田 陽奈, 前田 優, 山田 道夫

1P-2

Controlling Thermal Conductivity of Carbon Nanotubes by Side-Wall Functionalization
to Improve the Figure of Merit☆

* Angana Borah, Tsuyohiko Fujigaya

1P-3☆

1 mass%以下のCNTを用いた柔軟なエアロゲル自立膜の開発と熱界面材料応用* 川上 慧, 杉目 恒志, 塩見 淳一郎, 野田 優

iv

49

50

51

３月 ２日 （土）1P-4☆

板状多孔質ガラスへの単層カーボンナノチューブの作製

1P-5

Characterization of Atomically Precise MoS2 Nanoribbons Confined Inside Boron Nitride
Nanotubes☆

* Motoki Aizaki, Yusuke Nakanishi, Zheng Liu, GogoiPranjal Kumar, Jinhua Hong,
Ryousuke Senga, Kazu Suenaga, Hisanori Shinohara

1P-6☆

Precise carrier density control of SWCNTs by chemical doping with binary molecules

1P-7☆

Surface chemical modification of defect-introduced graphite

1P-8

Electronic band modification of graphene by surface reconstruction of Au (001)☆

* 寺澤 知潮, 保田 諭, 林 直輝, 乗松 航, 伊藤 孝寛, 町田 真一, 矢野 雅大,
斉木 幸一朗, 朝岡 秀人

1P-9
☆

52

* 松岡 朗平, 長澤 浩, 鈴木 信三
53

54* Guowei Wang, Takeshi Tanaka, Atsushi Hirano, Hiromichi Kataura
55* 小幡 吉徳, 石原 大輝, Gagus Sunnarionto, 西村 智朗, 草部 浩一, 京谷 隆, 高井 和之

Fabrication of transparent solar cell with directly grown WS2 in large scale

56

57* Xing He, Yoshiki Yamaguchi, Toshiro Kaneko, Toshiaki Kato

フラーレンの化学
1P-10

Installing Various Functional Groups on Li+@C60 Using Azide-containing
1,3-Cyclohexadienes

58* Hiroshi Okada, Takumi Takada, Shota Nagasawa, Yusuke Sasano, Eunsang Kwon,
Yutaka Matsuo, Yoshiharu Iwabuchi

金属内包フラーレン
1P-11

ESR study of Sc-dimetallofullerene anions: (Sc2Cn)- (n=76, 78, 80)

59* 吉田 俊, 菊地 耕一, 阿知波 洋次, 兒玉 健
1P-12

トリフルオロメチル化したガドリニウム金属内包フラーレンの単離と構造決定

60* 青柳 忍, 中川 綾乃, 大町 遼, 篠原 久典

フラーレン
1P-13

C60フラーレンに内包された原子の電子励起

61* Haruki Torii, Masayuki Toyoda, Susumu Saito, Tomonari Wakabayashi,
Yasuyuki Kanai, Noboru Sasao, Motohiko Yoshimura

ナノ環境と安全評価
1P-14

Degradation of single-wall carbon nanotubes by lung macrophages of mouse in vivo

62

* Ying Xu, Minfang Zhang, Mei Yang, Masako Yudasaka, Toshiya Okazaki

ナノチューブの物性
1P-15

Revisiting transport mechanism in semiconducting carbon nanotube films with the aidof far-infrared plasmon response* 大井 かなえ, 河合 壯, 野々口 斐之v

63

３月 ２日 （土）1P-16

Mechanical properties of carbon nanotubes with vacancy under the uniaxial strain

64* 米山 和文, 岡田 晋
1P-17

単層カーボンナノチューブにおけるTHz高次高調波発生のフェルミレベル依存性

65* 西留 比呂幸, 永井 恒平, 一ノ瀬 遥太, 福原 健吾, 野崎 純司, 枝 淳子, 蓬田 陽平,
河野 淳一郎, 田中 耕一郎, 柳 和宏

ナノチューブの応用
1P-18

Melt Blending法を用いたSWNT/PE複合材料の開発

66* 大槻 南央, 山田 亮太, 安達 巧, 齋藤 勇太朗, 関戸 大
1P-19

簡易・高速プロセスによるX線管用・形態制御カーボンナノチューブ電子エミッタ67

北川 紗映, 杉目 恒志, 越智 隼人, 高橋 大造, * 野田 優

ナノチューブの生成と精製 Formation and purification of nanotubes
1P-20

Atomic Scale In-Situ Study on Carbon Nanotube Growth from Co-Co 3C Catalysts

68* Feng Yang, Yan Li
1P-21

膜作成を目指した二液相法とラマン分光法の組合せによる金属/半導体単層カーボン
ナノチューブの分離

69

山田 陽奈乃, 塩貝 翼, * 鈴木 信三
1P-22

Growth of Boron Nitride Layers on Single-Walled Carbon Nanotubes and Graphite

70* Hayato Arai, Satoshi Yotsumoto, Yongjia Zheng, Taiki Inoue, Rong Xiang,
Shohei Chiashi, Shigeo Maruyama
1P-23

Analysis of oxidation effects on the reactions between cobalt clusters and ethanol by
FT-ICR mass spectrometer71* Ryohei Yamada, Tomoyasu Inoue, Shohei Chiashi, Shigeo Maruyama

ナノワイヤー
1P-24

The Enhancement of the Electric Field around the Metallic Cylindrical Tube72

* Yuan Tian, Fenda Rizky Pratama, Muhammad Shoufie Ukhtary, Riichiro Saito

グラフェンの応用
1P-25

Effect of water on NO adsorption of ACFs

73

* 日景 結理奈, 西嶌 里美, 高井 和之
1P-26

ファンデルワールエピタキシーによる窒化物半導体成長74* 大江 佑京, 毛利 真一郎, 名西 やすし, 荒木 努

グラフェンの物性
1P-27

Tuning structure and electron transport properties of Graphene by chemical modification
using Ion-beam irradiation75* 中村 康輔, 西村 智朗, 吉本 紘輝, 髙井 和之
1P-28

グラフェンナノリボンにおける過渡分散関係のMD動力学によるフォノンエネルギー再分布の探査* ゾロツキヒナ タチアナ, 野田 雪絵

vi76３月 ２日 （土）
原子層
1P-29

Asymmetric field screening of h-BN for carrier accumulation in graphene77* Susumu Okada
1P-30

Preparation of Atomically Thin NbSe2 Layers by Selenizing Nb Films

78* Chisato Anndo, Yusuke Nakanishi, Hong En Lim, Yutaka Maniwa, Yasumitsu Miyata
1P-31

Analysis of plane antenna which radiates circular polarized light79* 丸岡 真人, 前田 大聖, 齋藤 理一郎
1P-32

Exciton Diffusion in hBN-encapsulated Monolayer TMDs

80

* 堀田 貴都, 樋口 翔平, 内山 揚介, 上野 啓司, 渡邊 賢司, 谷口 尚, 篠原 久典, 北浦 良
1P-33

Growth of TMDs with Cold-walled Metal-Organic Chemical Vaper Deposition81* 飯田 智士, 堀田 貴都, 篠原 久典, 北浦 良
1P-34

In-Plane Heterostructures of Twisted Bilayer Transition Metal Dichalcogenides

82* Hong En Lim, Zheng Liu, Takahiko Endo, Kana Kojima, Yusuke Nakanishi,
Yutaka Maniwa, Yasumitsu Miyata

ナノ炭素粒子1P-35

配向ポリン分子による紫外偏光フィルム

83

佐多 良介, 鈴木 晴, 森澤 勇介, 畑中 美穂, * 若林 知成
1P-36

レーザーアブレーションにより生成するオクタテトライン誘導体C12H884

北村 望, 大澤 綾人, 佐多 良介, 鈴木 晴, 森澤 勇介, 畑中 美穂, * 若林 知成

その他
1P-37

First order resonant Raman spectra of TaP

85* Xiaoqi Pang, Nguyen T. Hung, Ahmad R. T. Nugraha, Riichiro Saito
1P-38

Angle-Dependent Resonant Raman Spectra of LaAlSi

86* Tong Wang, Nguyen T. Hung, Ahmad R.T. Nugraha, Riichiro Saito＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:15 )13:30-14:00 若手奨励賞候補審査優先時間
招待講演 ( 15:15-15:30 )1I-2

New Developments in the Science and Applications of Wafer-Scale Crystalline Carbon
Nanotube Films

10* Junichiro Kono, Weilu Gao, Natsumi Komatsu, Fumiya Katsutani, Kazuhiro Yanagi

一般講演 ( 15:30-16:15 )ナノチューブの物性 ･ ナノチューブの生成と精製
1-5

カーボンナノチューブ凝集体の沈降粒子サイズ分析* 加藤 雄一, 森本 崇宏, 小橋 和文, 山田 健郎, 岡崎 俊也, 畠 賢治

vii

19

３月 ２日 （土）1-6

One-dimensional van der Waals heterostructure nanotubes: synthesis and characterization

20* Rong Xiang, Yongjia Zheng, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama
1-7

Diameter-Dependent Superconductivity in Individual WS2 Nanotubes

21* Feng Qin, Toshiya Ideue, Wu Shi, Xiao-xiao Zhang, Masaro Yoshida, Alla Zak,
Reshef Tenne, Tomoka Kikitsu, Daishi Inoue, Daisuke Hashizume, Yoshihiro Iwasa＞＞＞＞＞＞＞ 休憩 ( 16:15-16:30 ) ＜＜＜＜＜＜＜特別講演 ( 16:30-17:00 )1S-2

グラフェンおよび関連２次元物質の電子状態とトポロジカル性質2* 若林 克法

一般講演 ( 17:00-17:45 )グラフェンの応用 ･ グラフェンの物性
1-8

ハイドロキノン酸化反応用の異種元素ドープグラフェン触媒の合成と評価

22* 原 正則, Prerna Joshi, Hsin-Hui Huang, 吉村 雅満
1-9

Electrostatic properties of bilayer graphene nanoribbons under an external electric field23* 高 燕林, 岡田 晋
1-10

3次元トリプチセン重合体の構造と電子物性* 藤井 康丸, 丸山 実那, 岡田 晋＞＞＞＞＞＞＞ 休憩 ( 17:45-18:00 ) ＜＜＜＜＜＜＜チュートリアル ( 18:00-19:30 )ナノ炭素材料の実用化研究発展のための産官学連携* 小久保 研viii

24

３月 ３日 （日）特別講演
発表 ２５分 ・ 質疑応答 ５分
招待講演
発表 １０分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし

招待講演 ( 9:00-9:15 )2I-3

FC-CVD of SWNTs with Pre-made Bimetallic catalysts and the Effect of Sulphur

11* Esko I. Kauppinen, Saeed Ahmed, Yongping Liao, Aqeel Hussain, Qiang Zhang,
Er-Xiong Ding, Hua Jiang

一般講演 ( 9:15-10:00 )ナノチューブの物性 ･ ナノチューブの応用
2-1

Chirality engineering and metal-to-semiconductor transition of individual CNTs byin situ TEM

25* Dai-Ming Tang, Chang Liu, Yoshio Bando, Hui-Ming Cheng, Dmitri Golberg
2-2

In-situ TEM観察とI-V計測による多層カーボンナノチューブ破断温度の導出

26* 中原 仁, 山内 健太郎, 安坂 幸師, 齋藤 弥八, 柏谷 聡
2-3

Semiconducting Carbon Nanotubes as Crystal Growth Templates and Grain Bridges in
Perovskite Solar Cells

27* IL Jeon, Seungju Seo, Rong Xiang, Yang Yang, Hiromichi Kataura, Yutaka Matsuo,
Shigeo Maruyama＞＞＞＞＞＞＞ 休憩 ( 10:00-10:15 ) ＜＜＜＜＜＜＜特別講演 ( 10:15-10:45 )2S-3

遷移金属ダイカルコゲナイド単層膜を用いた発光素子

3* 竹延 大志一般講演 ( 10:45-11:30 )原子層
2-4Carrier accumulation in MoS2/MoSe2-FET by an external electric field

28* 丸山 実那, 岡田 晋
2-5

Formation process of long range ordered structure in 1T -TiSe2 by electron beamirradiation

29* Keita Kobayashi, Hidehiro Yasuda
2-6

Energetics and electronic structures of in-plane heterostructures of MoS2 and WS2

30* 澤畑 恒来, 丸山 実那, 岡田 晋

ポスタープレビュー ( 11:30-12:15 )若手奨励賞候補
2P-1☆

（☆） 若手奨励賞候補

Epoxide contamination in fullerenol production caused by ambient ozone* Sirikanya Chokaouychai, Qi Zhangix

87

３月 ３日 （日）2P-2Energetics and electronic structure of single walled carbon nanotube encapsulated inboron nitride nanotube☆

* 久間 馨, 岡田 晋, 千足 昇平, 丸山 茂夫

2P-3☆

カーボンナノチューブ薄膜の熱電シミュレーション

2P-4☆

単層カーボンナノチューブ水分散液を加えることによる触媒性能の改善

88

89* 藤崎 小太郎, 佃 将明, 山本 貴博
90* 岸田 和樹, 針谷 達, 谷本 壮, 滝川 浩史, 橋本 剛, 八名 拓実, 須田 善行

2P-5

Molecular Dynamics Simulations of the Influence of a Single Water Layer on theElectrical Conductivity of Graphene☆

* 木岡 夕星, 前川 侑毅, 笹岡 健二, 山本 貴博

2P-6☆

Charged exciton (trion) in anisotropic atomically thin 2D material ReS2

2P-7☆

遷移金属ダイカルコゲナイドを用いた面内ヘテロ構造の接合界面における電界発光

2P-8☆

2D SSHモデルにおけるトポロジカル状態の理論

91

92* 王 暁凡, 篠北 啓介, 宮内 雄平, 松田 一成
93* 高口 裕平, 蒲 江, 松岡 拓史, 小林 佑, 竹延 大志, 真庭 豊, 宮田 耕充
94* 尾花 大地, Feng Liu, 若林 克法

2P-9Synthesis of Single-Walled Carbon Nanotubes Coated with Thiol-Reactive Gel
via Emulsion Polymerization for Cancer Active Targeting☆

* Yukiko Nagai, Minoru Kawaguchi, Jun Ohno, Tsuyohiko Fujigaya

95

フラーレンの応用
2P-10

Synthesis of [C60]fullerene nanowhisker-cadmium selenide nanaoparticle composites andphotocatalytic degradation of methylene blue96

* Jeong Won Ko, Jeong Hoon Park, Weon Bae Ko

金属内包フラーレン
2P-11

Photoreactions of Sc3N@I h -C80 and Lu3N@I h -C80 with Disilirane: Characterization of
Labile 1,2-Adducts97* Shinji Kanzawa, Fumiaki Ozeki, Shinpei Fukazawa, Masahiro Kako, Kumiko Sato,
Michio Yamada, Yutaka Maeda, Makoto Furukawa, Takeshi Akasaka
2P-12

Near infrared emission of dimetallofullerene anions encapsulating Nd or Er98* 西本 真也, 平山 貴晟, 西留 比呂幸, 宮田 耕充, 柳 和宏, 菊地 耕一, 阿知波 洋次,
兒玉 健

ナノチューブの物性
2P-13

Analysis of Self-Absorption Effect on Resonance Raman Spectroscopy of Single-Chirality
Single-Wall Carbon Nanotubes* Xiaojun Wei, Shilong Li, Dehua Yang, Jiaming Cui, Huaping Liu, Weiya Zhou,
Sishen Xie, Takeshi Tanaka, Hiromichi Kataurax99

３月 ３日 （日）2P-14

Subdiffraction imaging of carbon nanotubes using nonlinear excitonic processes

100* Keigo Otsuka, Akihiro Ishii, Yuichiro Kato
2P-15

Enhanced in-plane thermal conductivity of single-walled carbon nanotube/boron nitride
nanotube composite films

101* Pengyingkai Wang, Yongjia Zheng, Taiki Inoue, Rong Xiang, Makoto Watanabe,
Shohei Chiashi, Shigeo Maruyama
2P-16

架橋単層カーボンナノチューブを利用した電子-音響的光学振動相互作用の構造依存性

102* 稲葉 工, 本間 芳和

ナノチューブの応用
2P-17Free-standing mode triboelectric generators with carbon nanotube thin film103

* 松永 正広, 廣谷 潤, 岸本 茂, 大野 雄高
2P-18

Polyaromatic Anthracene Clencher on Single-Walled Carbon Nanotubes as Cathodes
in Perovskite Solar Cells

104* Shuhei Okawa, Il Jeon, Esko I. Kauppinen, Yutaka Matsuo, Shigeo Maruyama
2P-19

メルトブレンディングにより調製されたCNT/HDPE複合材料の破断挙動の調査

105* 宇津木 孝一, 武田 光博, 森 真奈美, 太田 大陸, 古崎 柊, 関戸 大

ナノチューブの生成と精製
2P-20

Growth Mechanism of (6,5) Carbon Nanotube: Edge Structures and their
Regioselectivities106* 西川 智裕, 佐藤 徹, 春田 直毅, 兒玉 健, 阿知波 洋次
2P-21

Ir触媒を用いた垂直配向した細径のSWCNT成長：触媒量による影響

107* 岡田 拓也, サラマ カマル, 鈴木 智子, 才田 隆広, 成塚 重弥, 丸山 隆浩
2P-22

還元ガスを用いない単層CNTフォレスト成長における鉄触媒への貴金属添加効果

108* 桜井 俊介, 何 金萍, 畠 賢治, Futaba Don
2P-23

単層カーボンナノチューブの直径と触媒の相関109* 中野 尭雄

ナノホーン
2P-24

Structural Analysis of Carbon Nanobrushes and Carbon Nanohorn Aggregates using
Small-Angle X-Ray Scattering Method

110* Ryota Yuge, Kimiyoshi Fukatsu, Takashi Miyazaki

グラフェンの応用
2P-25

グラファイトへの白金粒子照射による欠陥生成シミュレーション

111* 園田 利希, 山本 貴博
2P-26

Transport properties of armchair graphene nanoribbons* Md Shafiqul Islam, Nguyen Tuan Hung, Ahmad Ridwan Tresna Nugraha, Riichiro Saito

xi

112

３月 ３日 （日）グラフェンの物性
2P-27Electronic structures of porphyrin graphene nanoribbons

113* Hideyuki Jippo, Manabu Ohtomo, Shintaro Sato, Hironobu Hayashi, Hiroko Yamada,Mari Ohfuchi
2P-28

Electrostatic properties of graphene nanoribbons under an external electric field

114* Yoshimasa Omata, Susumu Okada

原子層
2P-29

エタノール溶液を用いた単層MoS2へのヒドラジン分子吸着の時間特性

115* 児玉 尚子, 石黒 康志, 高井 和之
2P-30

Exciton polarizability and renormalization effects for optical modulation in monolayer
semiconductors

116* 蒲 江, 松木 啓一郎, Leiqiang Chu, 小林 佑, 佐々木 将悟, 宮田 耕充, Goki Eda,
竹延 大志
2P-31

Development of molecular beam epitaxy for preparation of transition metal dichalcogenide
atomic layers and their heterostructures

117* 寺島 幸輝, 村井 雄也, 堀田 貴都, 渡辺 賢司, 谷口 尚, 篠原 久典, 北浦 良
2P-32

Single-layer MoS2 as large voltage generator driven by liquid motion

118* Adha Sukma Aji, Ryohei Nishi, Hiroki Ago, Yutaka Ohno
2P-33

The spin angular momentum of surface plasmon in 2D material

119* M. Shoufie Ukhtary, Riichiro Saito
2P-34

Ni-Fe合金上における六方晶窒化ホウ素の成長ダイナミクス

120* 内田 勇気, 河原 憲治, 秋山 将人, 山崎 重人, 光原 昌寿, 吾郷 浩樹
2P-35

単層カルコゲナイドナノリボンとヘテロ構造の成長

121* 小林 佑, 劉 崢, 入沢 寿史, 真庭 豊, 宮田 耕充

ナノ炭素粒子2P-36

シアノポリインHC11Nのリン光スペクトル122

シュチェパニアク アーシュラ, 東山 津久美, 佐多 良介, 鈴木 晴, 森澤 勇介, * 若林 知成

バイオ
2P-37

グルコースバイオ燃料電池に向けたCVDグラフェンの電気化学的特性評価

123* 三木 啓秀, 加藤 明裕, 渡辺 剛志, 黄 晋二
2P-38

マウスフン中に排泄されるCNT量の計測

124

Mayumi Erata, Yuko Okamatsu-Ogura, Takeshi Tanaka, Hiromichi Kataura,* Masako Yudasaka＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜xii

３月 ３日 （日）ポスターセッション ( 13:30-15:15 )13:30-14:00 若手奨励賞候補審査優先時間
大澤賞・飯島賞・若手奨励賞の授賞式 ( 15:15-16:00 )特別講演 ( 16:00-16:30 )2S-4

単一SWCNT分光

4* 本間 芳和, 千足昇平

一般講演 ( 16:30-17:15 )ナノチューブの物性
2-7

カーボンナノチューブのプラズマ吸収のカイラリティ依存性

31* 齋藤 理一郎, Daria Sacco, Ahmad R. T. Nugraha, M. Shoufie Ukhtary
2-8

Decay dynamics and diffusion lengths of bright and dark excitons in air-suspended
carbon nanotubes

32* Akihiro Ishii, Hidenori Machiya, Yuichiro Kato
2-9

Surface-Enhanced Raman Spectroscopy of Individual Single-Walled Carbon Nanotubes

33* Juan Yang, Chenmaya Xia, Henan Li, Daqi Zhang, Sheng Li, Haoming Liu, Ruoming Li,
Yan Li＞＞＞＞＞＞＞ 休憩 ( 17:15-17:30 ) ＜＜＜＜＜＜＜
招待講演 ( 17:30-17:45 )2I-4

二次元材料への期待 ～NEDO-TSCの取り組み～12* 井関 隆之

一般講演 ( 17:45-18:30 )ナノチューブの応用 ・ ナノ炭素粒子 ・ その他
2-10

Tiナノチューブ上に形成された高性能Irベース水分解触媒のデザイン、合成

34

Cheng Junfang, Jun Yang, 北野 翔, 山内 美穂, * 中嶋 直敏
2-11溶液からのナノダイヤモンドの自己組織性35* 田中 利彦, 三浦 康弘, 青山 哲也, 宮本 和範, 内山 真伸, 大澤 映二
2-12

A Case Study for Nanoparticles on Nanodiamond: Facile Preparation of
Nanodiamond-iron oxide Nanohybrid* Ahmad Tayyebi, Takuya Hayashi, Fumi Yoshino, Naoki Komatsu＞＞＞＞＞＞＞ 休憩 ( 18:30-18:45 ) ＜＜＜＜＜＜＜懇親会 ( 18:45-20:30 )

xiii

36

３月 ４日 （月）特別講演
発表 ２５分 ・ 質疑応答 ５分
招待講演
発表 １０分 ・ 質疑応答 ５分
一般講演
発表 １０分 ・ 質疑応答 ５分
ポスタープレビュー
発表 １分 ・ 質疑応答 なし

特別講演 ( 9:00-9:30 )3S-5

Structure control, Mass Production and Applications of Well Aligned Carbon Nanotubes

5* Fei Wei

一般講演 ( 9:30-10:15 )ナノチューブの生成と精製 ・ グラフェンの応用
3-1

Fe/Gd/Al触媒による数ミリメートル長単層カーボンナノチューブフォレストの成長メカニズム37* 杉目 恒志, 仲川 黎, 佐藤 俊裕, Cinzia Cepek, 野田 優
3-2

Single-walled carbon nanotube growth onto graphene crystals

38* Kamal P Sharma, Takuya Okada, Aliza Khaniya Sharma, Takahiro Maruyama
3-3

触媒原料の過熱分解による気相合成単層カーボンナノチューブの質と量の向上

39

並木 克也, 杉目 恒志, 大沢 利男, * 野田 優＞＞＞＞＞＞＞ 休憩 ( 10:15-10:30 ) ＜＜＜＜＜＜＜特別講演 ( 10:30-11:00 )3S-6

Environment effects on the charge states of metallic and semiconducting SWCNTs
during ELF separation

6* 斎藤 毅, 桒原 有紀

一般講演 ( 11:00-11:30 )ナノチューブの応用
3-4

全溶液プロセスで作製した異種材料接合によるダイオード

40* 竹井 邦晴, 山本 大介, 潮海 麻生, 有江 隆之, 秋田 成司
3-5

Low-voltage operable complementary carbon nanotube thin-film transistors withthreshold tuning by controlled doping on plastic substrate

41* Fu-Wen Tan, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

ポスタープレビュー ( 11:30-12:15 )若手奨励賞候補（☆） 若手奨励賞候補

3P-1

Platinum-catalyzed reaction of [60]fullerene with 9-Ethynyl-9H -fluoren-9-yl
carboxylates☆

* 瀧澤 真由, 額谷 耀子, 鈴木 光明, 前田 優, 山田 道夫

3P-2

Observation of Single-Molecule Reactions Inside Individual Carbon Nanotubes☆

* Chenmaya Xia, Juan Yang, Henan Li, Daqi Zhang, Sheng Li, Haoming Liu, Ruoming Li,
Yan Li

xiv

125

126

３月 ４日 （月）3P-3

局所化学修飾単層カーボンナノチューブのフォトルミネッセンスに対する分子構造と溶媒効果の相関性☆

* 新留 嘉彬, 白木 智丈, 藤ヶ谷 剛彦

3P-4☆

Low-voltage operable and stretchable carbon nanotube integrated circuits

3P-5☆

グラフェンの光熱電効果を用いたサイクロトロン共鳴の検出

3P-6☆

単層および二層グラフェンの熱電効果に関する理論解析

3P-7☆

A3Bハニカム単層シートにおけるザック位相とトポロジカルエッジ状態

3P-8☆

イオントラップ型移動度測定システムを用いたグラフェン量子ドットの高分解能測定

3P-9☆

エチレン、アセチレンガス流中のレーザー誘起ブレークダウンによるポリイン生成

3P-10
☆

黒鉛層間化合物(GICs)を用いた数層グラフェンの調製

127

128

* 西尾 祐哉, 鹿嶋 大雅, 廣谷 潤, 岸本 茂, 大野 雄高
129* 木下 圭, 守谷 頼, 荒井 美穂, 増渕 覚, 渡邊 賢司, 谷口 尚, 町田 友樹
130* 掘井 耀, 笹岡 健二, 山本 貴博, 福山 秀敏
131* 亀田 智明, Feng Liu, 若林 克法
132* 星野 裕大, 城 涼佳, 桒原 彰太, 菅井 俊樹
133* 滝沢 信行, Al-Tuairqi Sahr, Wang Qi, Sanderson Joseph, 若林 知成, 城丸 春夫
134* 南里 佳寿, 吉谷 博司, 福井 弘司, 中壽賀 章, 衣本 太郎, 津村 朋樹, 豊田 昌宏

金属内包フラーレン
3P-11

Attempt to produce dimetallofullerenes containing Yb with Ta135* 山下 祐典, 小林 和博, 菊地 耕一, 阿知波 洋次, 兒玉 健
3P-12

Attempt to produce dimetallofullerenes containing Eu

136* 降矢 裕輔, 菊地 耕一, 阿知波 洋次, 兒玉 健

ナノチューブの物性
3P-13

周期加熱法を用いた単層カーボンナノチューブ薄膜の面内及び面直方向の熱伝導率の
温度依存性

137

* 松尾 博之, 蓬田 陽平, 八木 貴志, 柳 和宏
3P-14

機械的変形が生じたカーボンナノチューブの熱電性能シミュレーション138* 松本 圭一郎, 山本 貴博
3P-15

Numerical study of disappearance of localization phenomena at finite temperature onelectronic transport in a nitrogen-doped carbon nanotube

139* 石関 圭輔, 笹岡 健二, 髙島 健悟, 山本 貴博

ナノチューブの応用
3P-16

セルロースナノファイバー/カーボンナノチューブ複合膜の作製と構造評価* 本田 志穂, Hsin-Hui Huang, 吉村 雅満

xv

140

３月 ４日 （月）3P-17

DNN微結晶/CNT薄膜の硬X線に対する電流応答141* 石井 聡, 鈴木 慧, 石川 剛弘, 小西 輝昭, 濱野 毅, 廣谷 潤, 大野 雄高, 平尾 敏夫

ナノチューブの生成と精製
3P-18

The collective effects of iron amount and annealing temperature of a magnesia underlayer
for the highly efficient growth of single-wall carbon nanotube forests142* 辻 享志, 陳 国海, 畠 賢治, フタバ ドン, 桜井 俊介
3P-19

Molecular Dynamics Simulation of SWCNT Growth from Seed Tube-Walls with Various
Chiralities

143* 向井 協, 吉川 亮, 久間 馨, 橋本 翔, 千足 昇平, 丸山 茂夫
3P-20

カーボンナノチューブ黒化膜作製におけるアルミナ担持層の影響

144* 山下 大志, 渡辺 博道, 明石 孝也
3P-21

Relation between growth conditions and growth profiles of individual SWNTs studied bydigital isotope labeling145* Shun Yamamoto, Bunsho Koyano, Shota Hiraoka, Kaoru Hisama, Keigo Otsuka,
Taiki Inoue, Rong Xiang, Shohei Chiashi, Shigeo Maruyama
3P-22

Growth and transfer of one-dimensional heterostructures

146* Yongjia Zheng, Rong Xiang, Taiki Inoue, Yang Qian, Ming Liu, Shohei Chiashi,
Esko I. Kauppinen, Shigeo Maruyama

内包ナノチューブ
3P-23

Study on one-dimensional stacking structure of polycyclic aromatic hydrocarbon
molecules encapsulated in single-walled carbon nanotubes by molecular dynamics
simulations

147* 永井 涼, 片岡 洋右, 緒方 啓典
3P-24

Strain Effect of Single-Walled Carbon Nanotubes Encapsulated in BN Nanotubes

148* 大鋸本 達郎, 四元 聡, 項 榮, 井ノ上 泰輝, 千足 昇平, 丸山 茂夫

グラフェン生成3P-25

Thickness-selective exfoliation and extraction of graphene using pyrene-based
nanocalipers

149* Alejandro López-Moreno, Naoki Komatsu

グラフェンの応用
3P-26

機械的結合されたグラフェン機械共振器による静電駆動

150* 赤澤 慶祐, 望月 裕太, 井上 太一, 吉川 大貴, 竹井 邦晴, 有江 隆之, 秋田 成司
3P-27

グラフェン機械共振器を用いた量子ドットの質量検知151* 堀 雅司, 望月 裕太, 竹井 邦晴, 有江 隆之, 秋田 成司
3P-28

超高速Siチップ上のグラフェン黒体放射発光* 中川 鉄馬, 深澤 佑介, 三好 勇輔, 天坂 裕也, ロビン レックマン, 横井 智哉, 河原 憲治,
吾郷 浩樹, 牧 英之

xvi

152

３月 ４日 （月）グラフェンの物性
3P-29

エネルギーギャップの導入にむけた銀ナノワイヤーを用いた高品質グラフェンナノリボンの作製

153* 青木 健輔, 青木 伸之
3P-30

アセチレン鎖で架橋した二層グラフェンでの磁性に関する第一原理計算154* 横井 裕之

原子層
3P-31

Gold-Mediated Growth of Few-Layer Molybdenum Disulfide

155* Hong En Lim, Toshifumi Irisawa, Naoya Okada, Takahiko Endo, Yutaka Maniwa,
Yasumitsu Miyata
3P-32

Controlling temperature and sulfur addition for synthesis of thin WS2 nanotubes

156* 蓬田 陽平, 柳 和宏
3P-33

Optical conductivity of the Haldane model on honeycomb lattice157* Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito
3P-34

Softening effect on resonance frequency of MoS2 mechanical resonator induced bypersistent photoconductivity

158* 井上 太一, 遠藤 尚彦, 竹井 邦晴, 有江 隆之, 宮田 耕充, 秋田 成司
3P-35

TaS2のNCCDW-ICCDW相転移における層数依存性

159* 石黒 康志, 児玉 尚子, Bogdanov Kirill, Baranov Alexander, 高井 和之

その他
3P-36

Does Lateral Size of MoS2 Nanosheets Influence Photoelectrochemical Performance?

160* Ahmad Tayyebi, Tomokazu Umeyama, Meysam Tayebi, Naoki Komatsu
3P-37

Enhancing the Stability of Perovskite Solar Cells via Lithium-ion Endohedral Fullereneson Top of Laminated Carbon Nanotube Electrodes161* Ahmed Shawky, Il Jeon, Hiroshi Ueno, Hiroshi Okada, Esko Kauppinen ,Shigeo Maruyama, Yutaka Matsuo＞＞＞＞＞＞＞ 昼食 ( 12:15-13:30 ) ＜＜＜＜＜＜＜ポスターセッション ( 13:30-15:15 )13:30-14:00 若手奨励賞候補審査優先時間
特別講演 ( 15:15-15:45 )3S-7

Multifunctional carbon nanomaterials for biomedical applications* Alberto Bianco

xvii

7

３月 ４日 （月）一般講演 ( 15:45-16:45 )金属内包フラーレン ･ フラーレンの化学 ・ フラーレン
3-6What controls whether [M2@Cn]- (n=78, 80) is stably formed or not?

42

* 小林 和博, 菊地 耕一, 阿知波 洋次, 兒玉 健
3-7

Fullerene-Cation-Mediated Synthesis of Cyclo[60]fullerenes with 5-Membered-Rings
and their Application to Perovskite Solar Cells

43* 林 昊升, 田 日, 丸山 茂夫, 松尾 豊
3-8Transformation kinetics from Li+@[5,6]-PCBM to Li+@[6,6]-PCBM: Reaction rateenhancement by the encapsulated Li+

44* Yue Ma, Hiroshi Ueno, Hiroshi Okada, Yutaka Matsuo
3-9

C60スペクトルにおける振動指紋

45* 若林 知成, 百瀬 孝昌, ファハールト マリオ E.

招待講演 ( 16:45-17:00 )3I-5

グラフェンを用いたテラヘルツ無線通信リフレクトアレー

13* Erik Einarsson, Arka Karmakar, Farah Vandrevala, Arjun Singh, Josep M. Jornet

一般講演 ( 17:00-17:30 )グラフェンの応用
3-10

Density functional theory-based study of O2 adsorption on S- and P-doped graphitic
carbon nitride/graphene layer

46* Wilbert James Futalan, Koichi Kusakabe, Allan Abraham Padama, Joey Ocon
3-11

プラトーレイリー不安定性活用グラフェンナノリボン量子デバイスの高効率作製* 大北 若奈, 鈴木 弘朗, 金子 俊郎, 加藤 俊顕

xviii

47

March 2nd, Sat.
Special Lecture: 25min (Presentation) + 5min (Discussion)
Invited Lecture: 10min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)

Invited Lecture ( 9:30-9:45 )Atomic Scale Stability of Nano-Sized Tungsten-Cobalt Intermetallic Compounds in
1I-1
Reactive Environment at High Temperature* Yan Li, Feng Yang

9

General Lecture ( 9:45-10:15 )Endohedral nanotubes
Carbyne@CNT on a film scale formed after field emission: Characterization by
1-1
Raman and TEM
Satoshi Toma, Koji Asaka, Satoshi Kashiwaya, Tomonari Wakabayashi,* Yahachi Saito

15

1-2

Isolation of Single-wired Transition Metal Monochalcogenides by Carbon Nanotubes* Yusuke Nakanishi, Masataka Nagata, Shivani Shukla, Zheng Liu,
Yung-Chang Lin, Takuma Shiga, Yuto Nakamura, Takeshi Koyama,
Hideo Kishida, Kazu Suenaga, Hisanori Shinohara

16＞＞＞＞＞＞＞ Coffee Break ( 10:15-10:30 ) ＜＜＜＜＜＜＜Special Lecture ( 10:30-11:00 )1S-1
Transition metal dichalcogenide atomic layers and their heterostructures* Ryo Kitaura

1

General Lecture ( 11:00-11:30 )Atomic Layers
Enhancement of Excitonic Valley Polarization by Carrier Doping in Monolayer WSe2
1-3
* Keisuke Shinokita, Xiaofan Wang, Yuhei Miyauchi, Kenji Watanabe,
Takashi Taniguchi, Kazunari Matsuda

17

1-4

STM images of graphene/C-doped h-BN heterostructures from first-principles
electronic-structure calculations* Taishi Haga, Yoshitaka Fujimoto, Susumu Saito

Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
Synthesis and characterization of fullerene-based molecular torsion balance for
1P-1
investigating noncovalent fullerene–arene interaction☆
* Haruna Narita, Yutaka Maeda, Michio Yamada

xix

18

49

March 2nd, Sat.
1P-2☆

Controlling Thermal Conductivity of Carbon Nanotubes by Side-Wall
Functionalization to Improve the Figure of Merit* Angana Borah, Tsuyohiko Fujigaya☆

Soft Aerogels Supported by ~1 mass% Carbon Nanotubes for Thermal Interface
Materials* Satoru Kawakami, Hisashi Sugime, Junichiro Shiomi, Suguru Noda

1P-4☆

Preparation of SWNTs on porous glass (PG) sheet* Tokinaru Matsuoka, Hiroshi Nagasawa, Shinzo Suzuki

1P-3

1P-5
☆

Characterization of Atomically Precise MoS2 Nanoribbons Confined Inside
Boron Nitride Nanotubes* Motoki Aizaki, Yusuke Nakanishi, Zheng Liu, GogoiPranjal Kumar,
Jinhua Hong, Ryousuke Senga, Kazu Suenaga, Hisanori Shinohara

50

51

52

53

1P-6
☆

Precise carrier density control of SWCNTs by chemical doping with binary molecules* Guowei Wang, Takeshi Tanaka, Atsushi Hirano, Hiromichi Kataura

54

1P-7

Surface chemical modification of defect-introduced graphite* Yoshinori Obata, Hiroki Ishihara, Gagus Sunnarionto, Tomoaki Nishimura,
Koichi Kusakabe, Takashi Kyotani, Kazuyuki Takai

55

Electronic band modification of graphene by surface reconstruction of Au (001)* Tomo-o Terasawa, Satoshi Yasuda, Naoki Hayashi, Wataru Norimatsu,
Takahiro Ito, Shinichi Machida, Masahiro Yano, Koichiro Saiki, Hidehito Asaoka

56

Fabrication of transparent solar cell with directly grown WS 2 in large scale* Xing He, Yoshiki Yamaguchi, Toshiro Kaneko, Toshiaki Kato

57

☆
1P-8
☆

1P-9
☆

Chemistry of fullerenes
Installing Various Functional Groups on Li+@C60 Using Azide-containing
1P-10
1,3-Cyclohexadienes* Hiroshi Okada, Takumi Takada, Shota Nagasawa, Yusuke Sasano,
Eunsang Kwon, Yutaka Matsuo, Yoshiharu Iwabuchi
Endohedral metallofullerenes
1P-11 ESR study of Sc-dimetallofullerene anions: (Sc2Cn)- (n=76, 78, 80)* Shun Yoshida, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
1P-12

Isolation and structure determination of trifluoromethylated gadolinium
metallofullerenes* Shinobu Aoyagi, Ayano Nakagawa, Haruka Omachi, Hisanori Shinohara

xx

58

59

60

March 2nd, Sat.
Fullerenes
1P-13 Electron excitation of an atom encapsulated in C60 fullerene* Haruki Torii, Masayuki Toyoda, Susumu Saito, Tomonari Wakabayashi,
Yasuyuki Kanai, Noboru Sasao, Motohiko Yoshimura

61

Environmental/Safety characterization of nanomaterials
1P-14 Degradation of single-wall carbon nanotubes by lung macrophages of mouse in vivo
* Ying Xu, Minfang Zhang, Mei Yang, Masako Yudasaka, Toshiya Okazaki

62

Properties of nanotubes
Revisiting transport mechanism in semiconducting carbon nanotube films
1P-15
with the aid of far-infrared plasmon response* Kanae Oi, Tsuyoshi Kawai, Yoshiyuki Nonoguchi

63

1P-16

1P-17

Mechanical properties of carbon nanotubes with vacancy under the uniaxial strain* Kazufumi Yoneyama, Susumu Okada
Fermi-level dependence of THz high-harmonic generation in single-wall carbon
nanotubes* Hiroyuki Nishidome, Kohei Nagai, Yota Ichinose, Kengo Fukuhara,
Junji Nozaki, Junko Eda, Yohei Yomogida, Junichiro Kono, Koichiro Tanaka,
Kazuhiro Yanagi

Applications of nanotubes
1P-18 Preparation of SWNT/PE composites via Melt Blending* Nao Otsuki, Ryota Yamada, Takumi Adachi, Yutaro Saito, Masaru Sekido
1P-19

Electron emitters of textured carbon nanotube arrays for X-ray tubes via facile,rapid few-minute processes
Sae Kitagawa, Hisashi Sugime, Hayato Ochi, Daizo Takahashi, * Suguru Noda

Formation and purification of nanotubes
1P-20 Atomic Scale In-Situ Study on Carbon Nanotube Growth from Co-Co3C Catalysts* Feng Yang, Yan Li
1P-21

1P-22

Separation of metal/semiconductive SWNTs by ATP separation technique andRaman spectroscopy aimed for film-making
Hinano Yamada, Tsubasa Shiogai, * Shinzo Suzuki
Growth of Boron Nitride Layers on Single-Walled Carbon Nanotubes and Graphite* Hayato Arai, Satoshi Yotsumoto, Yongjia Zheng, Taiki Inoue, Rong Xiang,
Shohei Chiashi, Shigeo Maruyama

xxi

64

65

66

67

68

69

70

March 2nd, Sat.
1P-23

Analysis of oxidation effects on the reactions between cobalt clusters and ethanol
by FT-ICR mass spectrometer* Ryohei Yamada, Tomoyasu Inoue, Shohei Chiashi, Shigeo Maruyama

71

Nanowires
1P-24 The Enhancement of the Electric Field around the Metallic Cylindrical Tube
* Yuan Tian, Fenda Rizky Pratama, Muhammad Shoufie Ukhtary, Riichiro Saito

72

Applications of graphene
1P-25 Effect of water on NO adsorption of ACFs
* Yurina Hikage, Satomi Nishijima, Kazuyuki Takai

73

1P-26

Van der Waals Epitaxy of Gallium Nitride on Graphene* Ukyo Ooe, Shinichiro Mouri, Yasushi Nanishi, Tsutomu Araki

Properties of graphene
Tuning structure and electron transport properties of Graphene by chemical
1P-27
modification using Ion-beam irradiation* Kosuke Nakamura, Tomoaki Nishimura, Hiroki Yoshimoto, Kazuyuki Takai
1P-28

Probing phonon energy redistribution by MD dynamics of transient dispersion
relation at graphene nanoribbon* Tatiana Zolotoukhina, Yukie Noda

Atomic Layers
Asymmetric field screening of h-BN for carrier accumulation in graphene* Susumu Okada

1P-29

74

75

76

77

1P-30

Preparation of Atomically Thin NbSe2 Layers by Selenizing Nb Films* Chisato Anndo, Yusuke Nakanishi, Hong En Lim, Yutaka Maniwa,
Yasumitsu Miyata

78

1P-31

Analysis of plane antenna which radiates circular polarized light* Masato Maruoka, Taisei Maeda, Riichiro Saito

79

1P-32

Exciton Diffusion in hBN-encapsulated Monolayer TMDs
* Takato Hotta, Syohei Higuchi, Yosuke Uchiyama, Keiji Ueno, Kenji Watanabe,
Takashi Taniguchi, Hisanori Shinohara, Ryo Kitaura

80

1P-33

Growth of TMDs with Cold-walled Metal-Organic Chemical Vaper Deposition* Satoshi Iida, Takato Hotta, Hisanori Shinohara, Ryo Kitaura

81

1P-34

In-Plane Heterostructures of Twisted Bilayer Transition Metal Dichalcogenides* Hong En Lim, Zheng Liu, Takahiko Endo, Kana Kojima, Yusuke Nakanishi,
Yutaka Maniwa, Yasumitsu Miyata

82

xxii

March 2nd, Sat.
Carbon nanoparticles
UV-polarizer film of aligned polyene molecules
Ryoske Sata, Hal Suzuki, Yusuke Morisawa, Miho Hatanaka,* Tomonari Wakabayashi

1P-35

1P-36

Laser Ablated Octatetrayne Derivative C12H8
Nozomu Kitamura, Ayato Osawa, Ryoske Sata, Hal Suzuki, Yusuke Morisawa,
Miho Hatanaka, * Tomonari Wakabayashi

Other topics
1P-37 First order resonant Raman spectra of TaP* Xiaoqi Pang, Nguyen T. Hung, Ahmad R. T. Nugraha, Riichiro Saito
1P-38

Angle-Dependent Resonant Raman Spectra of LaAlSi* Tong Wang, Nguyen T. Hung, Ahmad R.T. Nugraha, Riichiro Saito

83

84

85

86

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:15 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Invited Lecture ( 15:15-15:30 )New Developments in the Science and Applications of Wafer-Scale Crystalline
1I-2
Carbon Nanotube Films* Junichiro Kono, Weilu Gao, Natsumi Komatsu, Fumiya Katsutani,
Kazuhiro Yanagi
General Lecture ( 15:30-16:15 )Properties of nanotubes ・ Formation and purification of nanotubes
1-5
Sedimentation particle size analysis of carbon nanotube aggregates* Yuichi Kato, Takahiro Morimoto, Kazufumi Kobashi, Takeo Yamada,Toshiya Okazaki, Kenji Hata
1-6

1-7

One-dimensional van der Waals heterostructure nanotubes: synthesis andcharacterization* Rong Xiang, Yongjia Zheng, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama
Diameter-Dependent Superconductivity in Individual WS2 Nanotubes* Feng Qin, Toshiya Ideue, Wu Shi, Xiao-xiao Zhang, Masaro Yoshida, Alla Zak,
Reshef Tenne, Tomoka Kikitsu, Daishi Inoue, Daisuke Hashizume, Yoshihiro Iwasa＞＞＞＞＞＞＞ Coffee Break ( 16:15-16:30 ) ＜＜＜＜＜＜＜

xxiii

10

19

20

21

March 2nd, Sat.
Special Lecture ( 16:30-17:00 )1S-2
Topological Properties of Graphene and Related 2D Materials* Katsunori Wakabayashi
General Lecture ( 17:00-17:45 )Applications of graphene ・ Properties of graphene
Synthesis of Heteroatom-doped Graphene as Active Catalysts for Hydroquinones
1-8
Oxidation Reaction* Masanori Hara, Prerna Joshi, Hsin-Hui Huang, Masamichi Yoshimura
1-9

1-10

Electrostatic properties of bilayer graphene nanoribbons under an external
electric field* Yanlin Gao, Susumu Okada
Geometric and electronic structures of three-dimensional polymerized triptycene* Yasumaru Fujii, Mina Maruyama, Susumu Okada＞＞＞＞＞＞＞ Coffee Break ( 17:45-18:00 ) ＜＜＜＜＜＜＜Tutorial ( 18:00-19:30 )Industry-Government-Academia Collaboration for Development of Applicationand its R&D of Nanocarbon Materials* Ken Kokubo

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March 3rd, Sun.
Special Lecture: 25min (Presentation) + 5min (Discussion)
Invited Lecture: 10min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)

Invited Lecture ( 9:00-9:15 )2I-3
FC-CVD of SWNTs with Pre-made Bimetallic catalysts and the Effect of Sulphur* Esko I. Kauppinen, Saeed Ahmed, Yongping Liao, Aqeel Hussain,
Qiang Zhang, Er-Xiong Ding, Hua Jiang
General Lecture ( 9:15-10:00 )Properties of nanotubes ・ Applications of nanotubes
Chirality engineering and metal-to-semiconductor transition of individual CNTs
2-1
by in situ TEM* Dai-Ming Tang, Chang Liu, Yoshio Bando, Hui-Ming Cheng, Dmitri Golberg
2-2

2-3

Derivation of breaking temperature of multi-walled carbon nanotube by using
in-situ TEM observations and I-V measurements* Hitoshi Nakahara, Kentaro Yamauchi, Koji Asaka, Yahachi Saito,
Satoshi Kashiwaya
Semiconducting Carbon Nanotubes as Crystal Growth Templates and Grain
Bridges in Perovskite Solar Cells* IL Jeon, Seungju Seo, Rong Xiang, Yang Yang, Hiromichi Kataura,
Yutaka Matsuo, Shigeo Maruyama

11

25

26

27

＞＞＞＞＞＞＞ Coffee Break ( 10:00-10:15 ) ＜＜＜＜＜＜＜Special Lecture ( 10:15-10:45 )2S-3
Electroluminescence from transition metal dichalcogenide monolayers* Taishi Takenobu
General Lecture ( 10:45-11:30 )Atomic Layers
Carrier accumulation in MoS2/MoSe2-FET by an external electric field
2-4* Mina Maruyama, Susumu Okada
2-5

2-6

Formation process of long range ordered structure in 1T -TiSe2 by electron beamirradiation* Keita Kobayashi, Hidehiro Yasuda
Energetics and electronic structures of in-plane heterostructures of MoS 2 and WS2* Hisaki Sawahata, Mina Maruyama, Susumu Okada

xxv

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March 3rd, Sun.
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
2P-1
Epoxide contamination in fullerenol production caused by ambient ozone☆
* Sirikanya Chokaouychai, Qi Zhang☆

Energetics and electronic structure of single walled carbon nanotube
encapsulated in boron nitride nanotube* Kaoru Hisama, Susumu Okada, Shohei Chiashi, Shigeo Maruyama

2P-3☆

Thermoelectric Simulation for Carbon Nanotube Film
* Kotaro Fujisaki, Masaaki Tsukuda, Takahiro Yamamoto

2P-2

2P-4
☆

Improvement of catalytic performance by adding single-walled carbon nanotubes
aqueous dispersion* Kazuki Kishida, Toru Harigai, Tsuyoshi Tanimoto, Hirofumi Takikawa,Takeshi Hashimoto, Takumi Yana, Yoshiyuki Suda☆

Molecular Dynamics Simulations of the Influence of a Single Water Layer on theElectrical Conductivity of Graphene* Yusei Kioka, Yuki Maekawa, Kenji Sasaoka, Takahiro Yamamoto

2P-6☆

Charged exciton (trion) in anisotropic atomically thin 2D material ReS 2* Xiaofan Wang, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda

2P-5

2P-7
☆
2P-8
☆
2P-9
☆

Interface electroluminescence from in-plane heterostructures based transition
metal dichalcogenide monolayers* Yuhei Takaguchi, Jiang Pu, Hirofumi Matsuoka, Yu Kobayashi,
Taishi Takenobu, Yutaka Maniwa, Yasumitsu Miyata
Analytic Properties of topological state in 2D SSH model* Daichi Obana, Feng Liu, Katsunori Wakabayashi
Synthesis of Single-Walled Carbon Nanotubes Coated with Thiol-Reactive Gel
via Emulsion Polymerization for Cancer Active Targeting* Yukiko Nagai, Minoru Kawaguchi, Jun Ohno, Tsuyohiko Fujigaya

Applications of fullerenes
Synthesis of [C60]fullerene nanowhisker-cadmium selenide nanaoparticle
2P-10
composites and photocatalytic degradation of methylene blue
* Jeong Won Ko, Jeong Hoon Park, Weon Bae Ko

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March 3rd, Sun.
Endohedral metallofullerenes
Photoreactions of Sc3N@I h -C80 and Lu3N@I h -C80 with Disilirane:
2P-11
Characterization of Labile 1,2-Adducts* Shinji Kanzawa, Fumiaki Ozeki, Shinpei Fukazawa, Masahiro Kako,
Kumiko Sato, Michio Yamada, Yutaka Maeda, Makoto Furukawa, Takeshi Akasaka
2P-12

Near infrared emission of dimetallofullerene anions encapsulating Nd or Er* Shinya Nishimoto, Takaaki Hirayama, Hiroyuki Nishidome, Yasumitsu Miyata,
Kazuhiro Yanagi, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama

Properties of nanotubes
Analysis of Self-Absorption Effect on Resonance Raman Spectroscopy of
2P-13
Single-Chirality Single-Wall Carbon Nanotubes* Xiaojun Wei, Shilong Li, Dehua Yang, Jiaming Cui, Huaping Liu, Weiya Zhou,
Sishen Xie, Takeshi Tanaka, Hiromichi Kataura
2P-14

2P-15

2P-16

Subdiffraction imaging of carbon nanotubes using nonlinear excitonic processes* Keigo Otsuka, Akihiro Ishii, Yuichiro Kato
Enhanced in-plane thermal conductivity of single-walled carbon nanotube/boron
nitride nanotube composite films* Pengyingkai Wang, Yongjia Zheng, Taiki Inoue, Rong Xiang, Makoto Watanabe,
Shohei Chiashi, Shigeo Maruyama
Structure dependence of electron-acoustic-like-phonon interaction in individuallysuspended single-walled carbon nanotubes* Takumi Inaba, Yoshikazu Homma

Applications of nanotubes
Free-standing mode triboelectric generators with carbon nanotube thin film
* Masahiro Matsunaga, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

2P-17

2P-18

2P-19

Polyaromatic Anthracene Clencher on Single-Walled Carbon Nanotubes as
Cathodes in Perovskite Solar Cells* Shuhei Okawa, Il Jeon, Esko I. Kauppinen, Yutaka Matsuo, Shigeo Maruyama
Research of Fracture CNT/HDPE Composites via Melt Blending* Koichi Utsugi, Mitsuhiro Takeda, Manami Mori, Riku Ota, Shu Kozaki,
Masaru Sekido

Formation and purification of nanotubes
Growth Mechanism of (6,5) Carbon Nanotube: Edge Structures and their
2P-20
Regioselectivities* Tomohiro Nishikawa, Tohru Sato, Naoki Haruta, Takeshi Kodama, Yohji Achiba

xxvii

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102

103

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105

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March 3rd, Sun.
2P-21

2P-22

2P-23

Growth of vertically-aligned single-walled carbon nanotubes having small
diameters from Ir catalysts: Effect of catalyst amount* Takuya Okada, Kamal Sharma, Tomoko Suzuki, Takahiro Saida,
Shigeya Narirsuka, Takahiro Maruyama
The effect of noble metals addition into iron catalyst on the synthesis of verticallyaligned single-walled carbon nanotube without reducing gas* Shunsuke Sakurai, Jinping He, Kenji Hata, Don Futaba
Relationship Between Catalysts and Diameter of Single-Wallled Carbon Nanotubes* Akio Nakano

107

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109

Nanohorns
Structural Analysis of Carbon Nanobrushes and Carbon Nanohorn Aggregates
2P-24
using Small-Angle X-Ray Scattering Method* Ryota Yuge, Kimiyoshi Fukatsu, Takashi Miyazaki

110

Applications of graphene
2P-25 Simulation of Defect Generation by Irradiation of Platinum Particles on Graphite* Toshiki Sonoda, Takahiro Yamamoto

111

2P-26

Transport properties of armchair graphene nanoribbons* Md Shafiqul Islam, Nguyen Tuan Hung, Ahmad Ridwan Tresna Nugraha,
Riichiro Saito

Properties of graphene
Electronic structures of porphyrin graphene nanoribbons* Hideyuki Jippo, Manabu Ohtomo, Shintaro Sato, Hironobu Hayashi,
Hiroko Yamada, Mari Ohfuchi

2P-27

2P-28

Electrostatic properties of graphene nanoribbons under an external electric field* Yoshimasa Omata, Susumu Okada

Atomic Layers
Kinetics of hydrazine molecular adsorption with Ethanol solution on
2P-29
mono-layer MoS2
* Naoko Kodama, Yasushi Ishiguro, Kazuyuki Takai
2P-30

Exciton polarizability and renormalization effects for optical modulation inmonolayer semiconductors* Jiang Pu, Keichiro Matsuki, Leiqiang Chu, Yu Kobayashi, Shogo Sasaki,
Yasumitsu Miyata, Goki Eda, Taishi Takenobu

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March 3rd, Sun.
2P-31

Development of molecular beam epitaxy for preparation of transition metal
dichalcogenide atomic layers and their heterostructures* Koki Terashima, Yuya Murai, Takato Hotta, Kenji Watanabe,
Takashi Taniguchi, Hisanori Shinohara, Ryo Kitaura

117

2P-32

Single-layer MoS2 as large voltage generator driven by liquid motion* Adha Sukma Aji, Ryohei Nishi, Hiroki Ago, Yutaka Ohno

118

2P-33

The spin angular momentum of surface plasmon in 2D material* M. Shoufie Ukhtary, Riichiro Saito

119

2P-34

Growth dynamics of hexagonal boron nitride on Ni-Fe alloy catalysts* Yuki Uchida, Kenji Kawahara, Masato Akiyama, Shigeto Yamasaki,
Masatoshi Mitsuhara, Hiroki Ago

120

2P-35

Growth of monolayer chalcogenide nanoribbons and their heterostructures* Yu Kobayashi, Zheng Liu, Toshifumi Irisawa, Yutaka Maniwa, Yasumitsu Miyata

121

Carbon nanoparticles
2P-36 Phosphorescence Spectra of Cyanopolyyne HC11N
Urszula Szczepaniak, Tsukumi Higashiyama, Ryoske Sata, Hal Suzuki,
Yusuke Morisawa, * Tomonari Wakabayashi

122

Bio
2P-37

2P-38

Electrochemical characterization of CVD-grown graphene films for glucose
biofuel cells* Keishu Miki, Akihiro Kato, Takeshi Watanabe, Shinji Koh
Quantification of Single-Walled Carbon Nanotubes in Mouse Feces
Mayumi Erata, Yuko Okamatsu-Ogura, Takeshi Tanaka, Hiromichi Kataura,* Masako Yudasaka

123

124

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:15 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Awards Ceremony ( 15:15-16:00 )Special Lecture ( 16:00-16:30 )2S-4
Single SWCNT spectroscopy* Yoshikazu Homma, Shohei Chiashi

4

xxix

March 3rd, Sun.
General Lecture ( 16:30-17:15 )Properties of nanotubes
2-7
Chirality dependence of plasmon peak in carbon nanotubes* Riichiro Saito, Daria Sacco, Ahmad R. T. Nugraha, M. Shoufie Ukhtary
2-8

2-9

Decay dynamics and diffusion lengths of bright and dark excitons in air-suspended
carbon nanotubes* Akihiro Ishii, Hidenori Machiya, Yuichiro Kato
Surface-Enhanced Raman Spectroscopy of Individual Single-Walled Carbon
Nanotubes* Juan Yang, Chenmaya Xia, Henan Li, Daqi Zhang, Sheng Li, Haoming Liu,
Ruoming Li, Yan Li

31

32

33

＞＞＞＞＞＞＞ Coffee Break ( 17:15-17:30 ) ＜＜＜＜＜＜＜Invited Lecture ( 17:30-17:45 )2I-4
NEDO-TSC’s future efforts in 2-D materials R&D* Takayuki Iseki
General Lecture ( 17:45-18:30 )Applications of nanotubes ・ Carbon nanoparticles ・ Other topics
Design and Synthesis of a New Ir-based Catalyst Deposited on Ti Nanotubes
2-10
for Efficient Water Splitting
Junfang Cheng, Jun Yang, Sho Kitano, Miho Yamauchi, * Naotoshi Nakashima
2-11

2-12

Self-Assembly of Nanodiamonds from their Solutions* Toshihiko Tanaka, Yasuhiro F. Miura, Tetsuya Aoyama, Kazunori Miyamoto,
Masanobu Uchiyama, Eiji Osawa
A Case Study for Nanoparticles on Nanodiamond: Facile Preparation of
Nanodiamond-iron oxide Nanohybrid* Ahmad Tayyebi, Takuya Hayashi, Fumi Yoshino, Naoki Komatsu＞＞＞＞＞＞＞ Coffee Break ( 18:30-18:45 ) ＜＜＜＜＜＜＜Banquet ( 18:45-20:30 )

xxx

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35

36

March 4th, Mon.
Special Lecture: 25min (Presentation) + 5min (Discussion)
Invited Lecture: 10min (Presentation) + 5min (Discussion)
General Lecture: 10min (Presentation) + 5min (Discussion)
Poster Preview: 1min (Presentation)

Special Lecture ( 9:00-9:30 )Structure control, Mass Production and Applications of Well Aligned Carbon
3S-5
Nanotubes* Fei Wei
General Lecture ( 9:30-10:15 )Formation and purification of nanotubes ・ Applications of graphene
Growth mechanism of multi-millimeter-tall single-wall carbon nanotube forests
3-1
using Fe/Gd/Al catalysts* Hisashi Sugime, Rei Nakagawa, Toshihiro Sato, Cinzia Cepek, Suguru Noda
3-2

3-3

Single-walled carbon nanotube growth onto graphene crystals* Kamal P Sharma, Takuya Okada, Aliza Khaniya Sharma, Takahiro Maruyama
Enhanced gas-phase production of single-wall carbon nanotubes by overheatingof catalyst source
Katsuya Namiki, Hisashi Sugime, Toshio Osawa, * Suguru Noda

5

37

38

39

＞＞＞＞＞＞＞ Coffee Break ( 10:15-10:30 ) ＜＜＜＜＜＜＜Special Lecture ( 10:30-11:00 )Environment effects on the charge states of metallic and semiconducting SWCNTs
3S-6
during ELF separation* Takeshi Saito, Yuki Kuwahara
General Lecture ( 11:00-11:30 )Applications of nanotubes
3-4
All solution-processed heterogeneously integrated junction diode* Kuniharu Takei, Daisuke Yamamoto, Mao Shiomi, Takayuki Arie, Seiji Akita
3-5

Low-voltage operable complementary carbon nanotube thin-film transistors
with threshold tuning by controlled doping on plastic substrate* Fu-Wen Tan, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

xxxi

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41

March 4th, Mon.
Poster Preview ( 11:30-12:15 ) （☆）Candidates for the Young Scientist Poster Award
Candidates for the Young Scientist Poster Award
Platinum-catalyzed reaction of [60]fullerene with 9-Ethynyl-9H -fluoren-9-yl
3P-1
carboxylates* Mayu Takizawa, Yoko Nukatani, Mitsuaki Suzuki, Yutaka Maeda,☆
Michio Yamada
3P-2☆

Observation of Single-Molecule Reactions Inside Individual Carbon Nanotubes* Chenmaya Xia, Juan Yang, Henan Li, Daqi Zhang, Sheng Li, Haoming Liu,
Ruoming Li, Yan Li

125

126

☆

Solvent dependence of photoluminescence energy shifts at locally functionalizedsites of single-walled carbon nanotubes* Yoshiaki Niidome, Tomohiro Shiraki, Tsuyohiko Fujigaya

3P-4☆

Low-voltage operable and stretchable carbon nanotube integrated circuits* Yuya Nishio, Taiga Kashima, Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno

128

3P-5

Photo-thermoelectric detection of cyclotron resonance in graphene* Kei Kinoshita, Rai Moriya, Miho Arai, Satoru Masubuchi, Kenji Watanabe,
Takashi Taniguchi, Tomoki Machida

129

3P-6
☆

Theoretical Analysis on Thermoelectric Effects of Monolayer and Bilayer Graphene* Hikaru Horii, Kenji Sasaoka, Takahiro Yamamoto, Hidetoshi Fukuyama

130

3P-7
☆

Topological Edge States Induced by Zak’s Phase in A3B Monolayers* Tomoaki Kameda, Feng Liu, Katsunori Wakabayashi

131

3P-3

☆

3P-8
☆
3P-9
☆
3P-10
☆

High-resolution Measurement on Graphene Quantum Dots by Ion Trap Ion
Mobility Measurement System* Yudai Hoshino, Suzuka Tachi, Shota Kuwahara, Toshiki Sugai

127

132

Polyyne Formation from Ethylene and Acetylene by Laser Induced Breakdown* Nobuyuki Takizawa, Sahr Al-Tuairqi, Qi Wang, Joseph Sanderson,
Tomonari Wakabayashi, Haruo Shiromaru

133

Preparation of few-layered graphene using Graphite Intercalation Compounds (GICs)* Yoshihisa Nanri, Hiroshi Yoshitani, Hiroji Fukui, Akira Nakasuga,
Taro Kinumoto, Tomoki Tsumura, Masahiro Toyoda

134

Endohedral metallofullerenes
Attempt to produce dimetallofullerenes containing Yb with Ta* Yusuke Yamashita, Kazuhiro Kobayashi, Koichi Kikuchi, Yohji Achiba,
Takeshi Kodama

3P-11

xxxii

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March 4th, Mon.
3P-12

Attempt to produce dimetallofullerenes containing Eu* Yusuke Furiya, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama

Properties of nanotubes
Temperature dependence of thermal conductivity of in-plane and out-of-plane
3P-13
directions in single-wall carbon nanotube thin film by periodic heating method* Hiroyuki Matsuo, Yohei Yomogida, Takashi Yagi, Kazuhiro Yanagi
3P-14

3P-15

Simulation of Thermoelectric Properties of Carbon Nanotube with Mechanical
Deformation* Keiichiro Matsumoto, Takahiro Yamamoto
Numerical study of disappearance of localization phenomena at finite temperatureon electronic transport in a nitrogen-doped carbon nanotube* Keisuke Ishizeki, Kenji Sasaoka, Kengo Takashima, Takahiro Yamamoto

Applications of nanotubes
Synthesis and structural analysis of cellulose nanofiber/CNT composites* Shiho Honda, Hsin-Hui Huang, Masamichi Yoshimura

3P-16

3P-17

Current response of DNN crystals/CNT thin film to hard X-ray* Satoshi Ishii, Satoru Suzuki, Takahiro Ishikawa, Teruaki Konishi,
Tsuyoshi Hamano, Jun Hirotani, Yutaka Ohno, Toshio Hirao

Formation and purification of nanotubes
The collective effects of iron amount and annealing temperature of a magnesia
3P-18
underlayer for the highly efficient growth of single-wall carbon nanotube forests* Takashi Tsuji, Guohai Chen, Kenji Hata, Don Futaba, Shunsuke Sakurai
3P-19

3P-20

3P-21

3P-22

Molecular Dynamics Simulation of SWCNT Growth from Seed Tube-Wallswith Various Chiralities* Kanau Mukai, Ryo Yoshikawa, Kaoru Hisama, Kakeru Hashimoto,
Shohei Chiashi, Shigeo Maruyama
Influence of alumina buffer layer on production of carbon nanotube black coating film
* Taishi Yamashita, Hiromichi Watanabe, Takaya Akashi
Relation between growth conditions and growth profiles of individual SWNTs
studied by digital isotope labeling* Shun Yamamoto, Bunsho Koyano, Shota Hiraoka, Kaoru Hisama, Keigo Otsuka,
Taiki Inoue, Rong Xiang, Shohei Chiashi, Shigeo Maruyama
Growth and transfer of one-dimensional heterostructures* Yongjia Zheng, Rong Xiang, Taiki Inoue, Yang Qian, Ming Liu, Shohei Chiashi,
Esko I. Kauppinen, Shigeo Maruyama
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140

141

142

143

144

145

146

March 4th, Mon.
Endohedral nanotubes
Study on one-dimensional stacking structure of polycyclic aromatic hydrocarbon
3P-23 molecules encapsulated in single-walled carbon nanotubes by molecular dynamics
simulations* Ryo Nagai, Yosuke Kataoka, Hironori Ogata
3P-24

Strain Effect of Single-Walled Carbon Nanotubes Encapsulated in BN Nanotubes* Tatsurou Ogamoto, Satoshi Yostumoto, Rong Xiang , Taiki Inoue,
Shohei Chiashi, Shigeo Maruyama

Graphene synthesis
Thickness-selective exfoliation and extraction of graphene using pyrene-based
3P-25
nanocalipers* Alejandro López-Moreno, Naoki Komatsu
Applications of graphene
Electrostatic actuation of mechanically coupled graphene mechanical resonators* Keisuke Akazawa, Yuta Motiduki, Taichi Inoue, Daiki Yoshikawa,
Kuniharu Takei, Takayuki Arie, Seiji Akita

3P-26

147

148

149

150

3P-27

Mass sensing of Q-dots using graphene mechanical resonator* Masashi Hori, Yuta Mochizuki, Kuniharu Takei, Takayuki Arie, Seiji Akita

151

3P-28

Ultra-fast and on-chip graphene blackbody emitters* Kenta Nakagawa, Yusuke Fukazawa, Yusuke Miyoshi, Yuya Amasaka,
Robin Reckmann, Tomoya Yokoi, Kenji Kawahara, Hiroki Ago, Hideyuki Maki

152

Properties of graphene
Fabrication of high quality graphene nanoribbons using silver nanowires for
3P-29
energy gap opening* Kensuke Aoki, Nobuyuki Aoki
3P-30

Ab initio study on magnetism in double-layered graphene with acetylenic crosslinks* Hiroyuki Yokoi

Atomic Layers
Gold-Mediated Growth of Few-Layer Molybdenum Disulfide* Hong En Lim, Toshifumi Irisawa, Naoya Okada, Takahiko Endo,
Yutaka Maniwa, Yasumitsu Miyata

3P-31

153

154

155

3P-32

Controlling temperature and sulfur addition for synthesis of thin WS2 nanotubes* Yohei Yomogida, Kazuhiro Yanagi

156

3P-33

Optical conductivity of the Haldane model on honeycomb lattice* Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito

157

xxxiv

March 4th, Mon.
3P-34

3P-35

Softening effect on resonance frequency of MoS2 mechanical resonator inducedby persistent photoconductivity* Taichi Inoue, Takahiko Endo, Kuniharu Takei, Takayuki Arie,
Yasumitsu Miyata, Seiji Akita
Layer-number dependence of NCCDW-ICCDW phase transition in TaS2
* Yasushi Ishiguro, Naoko Kodama, Kirill Bogdanov, Alexander Baranov,Kazuyuki Takai

Other topics
3P-36 Does Lateral Size of MoS2 Nanosheets Influence Photoelectrochemical Performance?
* Ahmad Tayyebi, Tomokazu Umeyama, Meysam Tayebi, Naoki Komatsu
3P-37

Enhancing the Stability of Perovskite Solar Cells via Lithium-ion Endohedral
Fullerenes on Top of Laminated Carbon Nanotube Electrodes* Ahmed Shawky, Il Jeon, Hiroshi Ueno, Hiroshi Okada, Esko Kauppinen,
Shigeo Maruyama, Yutaka Matsuo

158

159

160

161

＞＞＞＞＞＞＞ Lunch Time ( 12:15-13:30 ) ＜＜＜＜＜＜＜Poster Session ( 13:30-15:15 )During 13:30-14:00, please give priority to selection of candidates for Young Scientist Poster Award

Special Lecture ( 15:15-15:45 )3S-7
Multifunctional carbon nanomaterials for biomedical applications* Alberto Bianco
General Lecture ( 15:45-16:45 )Endohedral metallofullerenes ・ Chemistry of fullerenes ・ Fullerenes
3-6
What controls whether [M2@Cn]- (n=78, 80) is stably formed or not?
* Kazuhiro Kobayashi, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
3-7

3-8

3-9

Fullerene-Cation-Mediated Synthesis of Cyclo[60]fullerenes with
5-Membered-Rings and their Application to Perovskite Solar Cells* Hao-Sheng Lin, Il Jeon, Shigeo Maruyama, Yutaka Matsuo
Transformation kinetics from Li+@[5,6]-PCBM to Li+@[6,6]-PCBM: Reaction
rate enhancement by the encapsulated Li+* Yue Ma, Hiroshi Ueno, Hiroshi Okada, Yutaka Matsuo
Vibrational Finger Prints in the Spectra of C60* Tomonari Wakabayashi, Takamasa Momose, Mario E. Fajardo

xxxv

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42

43

44

45

March 4th, Mon.
Invited Lecture ( 16:45-17:00 )3I-5
Graphene-based reflectarrays for wireless terahertz communications* Erik Einarsson, Arka Karmakar, Farah Vandrevala, Arjun Singh,
Josep M. Jornet
General Lecture ( 17:00-17:30 )Applications of graphene
Density functional theory-based study of O2 adsorption on S- and P-doped graphitic
3-10
carbon nitride/graphene layer* Wilbert James Futalan, Koichi Kusakabe, Allan Abraham Padama, Joey Ocon
3-11High yield fabrication of quantum device made of graphene nanoribbon using
Plateau-Rayleigh instability* Wakana Okita, Hiroo Suzuki, Toshiro Kaneko, Toshiaki Kato

xxxvi

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47

特別講演
Special Lecture

1S–1 ～ 1S–2
2S–3 ～ 2S–4
3S–5 ～ 3S–7

1S-1
Transition metal dichalcogenide atomic layers and their heterostructures
Ryo Kitaura
Department of Chemistry, Nagoya University, Nagoya 464-8602, JapanThe significant interests on graphene research have led to searching for othertwo-dimensional systems, and hexagonal boron nitrides (hBN) and transition metal
dichalcogenides (TMDs) were isolated in its monolayer form. The wide variety of
two-dimensional systems, in particular TMDs (MoS2, WS2, NbS2, MoSe2, etc.), and recent
advancement on experimental technique of fabrication of heterostructures provide us an
excellent platform to explore novel phenomena in two-dimensions. Although further
development of fabrication method is still needed to achieve multiple heterostructures withfully-controlled stacking or junction sequences, heterostructures suggest the exciting
possibility to realize designer 2D systems with desired electronic band structure and physicalproperties. We are working on fabrication of TMD-based heterostructures in a controlled way
by the exfoliation-based dry-transfer method and direct growth including molecular beam
epitaxy and chemical vapor deposition[1-4]. In this presentation, I will talk about our recent
results on fabrication and characterization of TMD heterostructure, including
hBN/MoSe2/hBN, hBN/MoS2/hBN, and hBN/MoS2/WS2/hBN, etc.
References:[1] M. Okada, et. al., ACS Nano, 8, 8273-7277 (2014)[2] T. Hotta, et. al., Appl. Phys. Lett., 109, 133101 (2016).
[3] M. Okada, et. al., Sci. Rep., 7, 322 (2017)[4] Y. Hoshi, et. al., Phys. Rev. B., 95, 241403 (2017).
[5] M. Okada, et. al., ACS Nano., 12, 2498-2505 (2018).
Corresponding Author: R. Kitaura
Tel: +81-52-789-2482, Fax: +81-52-747-6442,
E-mail: r.kitaura@nagoya-u.jp

Fig.1 Structure representations of structure of (a) hexagonal boron nitrideand (b) transition metal dichalcogenides.

-1-

1S-2
Topological Properties of Graphene and Related 2D Materials○Katsunori Wakabayashi
Department of Nanotechnology for Sustainable Energy, School of Science and Technology,
Kwansei Gakuin University, Sanda 669-1337, Hyogo, Jpana
In atomically-thin materials such as graphene and transition metal dichalcogenide nanosheet,the electronic properties crucially depend on the size, edge structures and topological propertiesof the system. It is well-known that graphene zigzag edges possess edge states at Fermi energy.
The presence of edge states in graphene provides peculiar magnetic properties and perfectly
conducting channel for electron conduction [1].
The origin of edge states can be understood from the topological properties of bulk
wavefunctions. There are two fundamental topological quantities i.e. Berry curvature and Berryconnection, which are understood as magnetic field and vector potential in momentum space,respectively. The origin of graphene edge states is attributed to the existence of nonzero Zak’s
phase (integration of Berry connection) of bulk wavefunction. This is distinct difference fromconventional topological insulators where the existence of topological edge states is guaranteedby the nonzero Berry curvature owing to the presence of spin-orbit interactions.
In my talk, I will briefly giveoverview of edge and nanoscale effects
on electronic transport properties ofgraphene nanostructures [1]. After that,
we shall discuss a two-dimensionallattice model which exhibits a nontrivial
topological phase in the absence of the
Berry curvature on the basis of twodimensional Su- Schrieffer–Heeger
Fig.1 (a) 2D SSH model and (b) corresponding energy
dispersion for ribbon structure in nontrivial phase.
(SSH) model [2]. Since this system
possesses both time-reversal andinversion symmetries, Berry curvature is zero but finite Berry connection. In spite of theabsence of Berry curvature, the system leads to the robust edge states. Also, we discuss possible
candidates of topological 2D materials, e.g. A3B biatomic sheet on the basis of first-principles
calculations [3], and 2D photonic crystals [2]. Our approachγ
Unit cell
will serve to design the topological 1D and 2D materials in
γ’aabsence of spin-orbit interactions.
[1] K. Wakabayashi, et.al., Sci. Technol. Adv. Mat. 11, 054504 (2010),
Sold Stat. Comm. 152, 1420 (2012).
[2] F. Liu, and K. Wakabayashi, PRL 118, 076803 (2017), Phys. Rev.
B97, 035442 (2018), J. Phys. Soc. Jpn. 123707 (2017).
[3] T. Kameda, F. Liu, S. Dutta, K. Wakabayashi, Phys. Rev. B (underreview)
Corresponding Author: K. Wakabayashi
Tel: +81-79-565-9751, Fax: +81-79-565-9729,
E-mail: waka@kwansei.ac.jp URL: http://www.kg-nanotech.jp/tmd/

-2-

1

a2
y

6
5

1
4

2

3

a1

2

x

Fig.2 Lattice structure of A3B
biatomic sheet

2S-3
Electroluminescence from transition metal dichalcogenide monolayers
Taishi Takenobu
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Transition metal dichalcogenide (TMDC) monolayers, such as molybdenum disulfide(MoS2) and tungsten diselenide (WSe2), have attracted strong attention as novel graphene-likematerials due to their large bandgap (1−2 eV) and excellent transport properties. Moreover,
the thickness of monolayer TMDCs is less than 1 nm, which is one of the thinnest materials,
and it leads to strong confinement effects, resulting in large binding energy of exciton (> 100meV) and formation of charged excitons. Particularly, due to their layered structure, there are
no dangling-bond states on the surface of TMDC monolayers and it could be an ideal
quantum well, providing potential as novel optoelectronic functionalities and devices [1,2].
One of the interesting functionalities of TMDCs is circularly polarized light emission(CPE), due to a non-centrosymmetric two-dimensional crystal, strong spin-orbit interaction,
non-zero Berry curvature and resulting spin-valley coupling [3-5]. Although there have been
many reports on CPE confirmed by photoluminescence spectra, the demonstrations ofcircularly polarized electroluminescence are still limited. This is because the technicaldifficulty in the fabrication of TMDC light-emitting device, which requires the intentional
doping techniques for formation of p-n junctions [2].
Recently, we developed the electrochemical method to dope holes and electrons [6-10],
and demonstrated light-emitting device of MoS2, MoSe2, WS2 and WSe2 monolayers [11-13].
Firstly, we fabricated ion-gel (a mixture of ionic liquid and triblock co-polymer) gated EDLTs(Electric Double Layer Transistors) using large-area TMDC monolayers, grown by chemical
vapor deposition [6-10]. The Fermi level of TMDCs can be continuously controlled by gate
voltages. The hole mobility of WSe2 can be 90 cm2/Vs at high carrier density of 1014 cm-2,
whereas the MoS2 showed electron mobility of 60 cm2/Vs. By the combination of p-type
WSe2 and n-type MoS2, we also demonstrated CMOS inverters [10].
Finally, we use this technique for photo-detection and light-emitting devices based on
various forms of TMDCs, such as monolayer polycrystalline films, single crystalline flakes,
and lateral heterojunctions [11-13]. Particularly, using single crystal samples, we observed
robust circularly polarized EL emission and, very recently, we are challenging thedemonstration of circularly polarized EL emission at room temperature.
[1] X. Xu et al. Nat. Phys. 10, 343 (2014).
[2] J. Pu and T. Takenobu, Adv. Mater. 30, 1707627 (2018).
[3] D. Xiao et al. Phys. Rev. Lett. 108, 196802 (2012).
[4] K. F. Mak et al. Nat. Nanotechnol. 7, 494 (2012).
[5] Y. J. Zhang et al. Science 344, 725 (2014).
[6] J. Pu, T. Takenobu et al. Nano Lett. 12, 4013 (2012).
[7] J. Pu, T. Takenobu et al. Appl. Phys. Lett. 103, 23505 (2013).
[8] J.-K. Huang, T. Takenobu et al. ACS Nano. 8, 923 (2014).
[9] Y.-H. Chang, T. Takenobu et al., ACS Nano. 8, 8582 (2014).
[10] J. Pu, T. Takenobu et al. Adv. Mater. 28, 4111 (2016).
[11] D. Kozawa, T. Takenobu et al. Appl. Phys. Lett. 109, 201107 (2016).
[12] J. Pu, T. Takenobu et al. Adv. Mater. 29, 1606918 (2017).
[13] M.-Y. Li, J. Pu, T. Takenobu et al. Adv. Funct. Mater. 28, 1706860 (2018).
Corresponding Author: T. Takenobu
Tel: +81-52-789-5173, Fax: +81-52-789-3712, E-mail: takenobu@nagoya-u.jp

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2S-4
Single SWCNT spectroscopy○Yoshikazu Homma1, Shohei Chiashi2
12Department of Physics, Tokyo University of Science, Tokyo 163-8601, Japan
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

A single-walled carbon nanotube (SWCNT) has several remarkable features: in shape, it isan inert cylinder with a nanometer diameter, serving as an excellent vessel for molecularconfinement; its quasi-one dimensionality causes the singular electronic states, which make
SWCNTs attractive objects in physics and electronics; the covalent carbon bonds make an
SWCNT an extremely tough wire, which is stable in ambient air. Combining those features,
we can use SWCNTs for measurements of adsorbed or encapsulated molecules as well as
SWCNTs’ intrinsic properties.
SWCNTs grown by chemical vapor deposition form a power-line like structure between
micropillars in a self-assembling fashion [1,2]. With a careful preparation, we can grow singly
suspended SWCNTs, as long as tens of micrometers, which are free from the substrate andother SWCNTs and have both the outer surface and inner space for molecular adsorption.
Because an SWCNT is a monolayered material, it receives dielectric interaction fromadsorbates. Furthermore, the quasi 1D electronic structure allows resonant optical transitions,which are sensitively influenced by the dielectric environment. A suspended SWCNT is thus
an ideal material for examining the behaviors of molecules on the surface or in the nano-spaceby means of optical spectroscopy.
We used isolated SWCNTs to investigate molecular adsorption/encapsulation (ethanol [3],water [4-6], and DNA [7]), and intrinsic phonon/thermal properties of SWCNTs byphotoluminescence and Raman spectroscopy. The nanotube wall provides special restriction
to adsorbed/encapsulated molecules via van der Waals potential. Molecules condensed in the
nano-space of SWCNT can be regarded as a pure lD system, while those on the outer surface
form a 2D system. The investigations of phase transition of those structures offer test beds forlow dimensional thermodynamics. For intrinsic phonon/thermal properties, radial-breathingmode frequencies free from environmental effects [8], phonon symmetry of G-bands [9], as
well as thermal conductivity of SWCNTs [10] were elucidated using individual SWCNTs.
The single SWCNT spectroscopy provides fruitful information on nano-scale physics andchemistry.
[1] Y. Homma et al. Appl. Phys. Lett. 81, 2261 (2002).
[2] Y. Homma, S. Chiashi, Y. Kobayashi, Rep. Prog. Phys. 72, 066502 (2009).
[3] S. Chiashi et al. Nano Lett. 8, 3097 (2008).
[4] Y. Homma, S. Chiashi et al. Phys. Rev. Lett. 110, 157402 (2013).
[5] S. Chiashi et al. J. Phys. Chem. Lett. 5, 408 (2014).
[6] S. Chiashi et al. ACS Nano in press.
[7] M. Ito et al. J. Phys. Chem. C. 119, 21141 (2015).
[8] S. Chiashi et al. Phys. Rev. B 91, 155415 (2015).
[9] Y. Tanaka et al. in preparation.
[10] K. Yoshino et al. ACS Omega 3, 4352 (2018).
Corresponding Author: Y. Homma
Tel: +81-3-2558-8244, Fax: +81-3-2558-47388,
E-mail: homma@rs.tus.ac.jp

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3S-5
Structure control, Mass Production and Applications of Well Aligned
Carbon Nanotubes
Fei Wei
Beijing Key Lab of Green Reaction Engineering & Technology, Tsinghua University,
China
As one of the nanomaterial representatives, one-dimensional carbon nanotubes (CNTs)
possess extraordinary mechanical, electrical, thermal, optical properties, as well as
controllable reactivity. This renders their broad applications in the fields of energy
storage and transition, composites, heterogeneous catalysis, environmental protection,and drug delivery. This talk presents the chemical and engineering principles of CNTs
mass production. The detailed strategies for mass production of multi-walled CNTs,
single-walled CNTs, double-walled CNTs, CNT arrays, super-aligned CNTs, superlong CNTs, doped CNTs, coiled CNTs, CNT junctions, as well as CNT/graphenehybrids were all presented. Meanwhile, the key engineering considerations instandardization, environment, health, and safety were analyzed, and theircommercialization process was evaluated. During recent decades, CNT production
capacity has reached more than thousands of tons per year, greatly decreasing the priceof CNTs. The bulk applications for Li-ion battery, conductive nanocomposites,
automotive, sporting goods have been achieved. Although the unique physiochemical
properties of an individual CNT are stated repeatedly, manifestation of such uniqueproperties in a macroscopic material, e.g., realization of high-strength CNT fibers,
remains a great challenge. If such challenges are solved, many critical applications will
be enabled. However, more efforts should be devoted on the chemical route for mass
production and engineering route for commercialization of high performance CNTs, inorder for versatile properties and applications. The basic research for CNTs production
and application will flourish the nanotechnology industry for sustainable society.

Biography
Fei Wei Cheungkong scholar Professor,
Director of Beijing key lab of green chemical reaction engineering and technology, Fei
Wei obtained his PhD in chemical engineering from China University of Petroleum in
1990. After a postdoctoral fellowship at Tsinghua University (China), he was appointed
an associate professor in 1992 and professor of chemical engineering of Tsinghua
University (China) in 1996. His scientific interests are technological applications ofchemical reaction engineering, multiphase flow, carbon nano materials, and sustainableenergy. He has designed and successfully running over 30 industrial fluidized bed
reactors, and authored three books and over 600 refereed publications with more than
37000 citations with H index 87
-5-

3S-6
Environment effects on the charge states of metallic and semiconducting
SWCNTs during ELF separation
Yuki Kuwahara 1, ○Takeshi Saito1
1National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan

Since the as-produced SWCNTs are generally a mixture of those with metallic (m-) andsemiconducting (s-) electrical properties, their separation is desirable, especially for thesemiconducting applications because these are extremely sensitive to impurities. To separate
the m- and s-SWCNTs, we have recently developed the electric-field-induced layer formation(ELF) method.[1] In the ELF method, a DC electric field is applied in the longitudinal
direction to a SWCNT dispersion containing the nonionic surfactant of polyoxyethylene (100)stearyl ether (Brij S100) as a surfactant. Interaction with the electric field leads to theaccumulation of m- and s-SWCNTs into the upper and lower parts of the dispersion,respectively, forming divided layers. The s-SWCNT dispersion obtained from ELF separation
is promising as an ink in printed electronics. We have fabricated s-SWCNT thin filmtransistors by using the ELF-separated s-SWCNT dispersion as a semiconductor ink, anddemonstrated that these devices possess high performance, small hysteresis, and low
variability in their characteristics.[2,3]Because of the similarity between ELF separation and electrophoresis, the charge states of
SWCNTs in the dispersion are expected to play an important role in the ELF separation. We
had firstly explained the ELF separation mechanism by difference in the charge states
between micelles containing s- and m-SWCNTs.[1] However, in our previous study, the mand s-SWCNTs separated by ELF showed no difference in their electrophoretic behavior,
which obviously contradicted the proposed mechanism. Thus far, the detailed mechanism of
ELF separation remained an open question.
In this study, the environment effects, namely the pH and Brij-S100 concentration in the
SWCNT dispersion during ELF separation were investigated. The zeta potentials, as animportant property for evaluating the charge state and the influence in electric field, were
measured for the m- and s-SWCNTs after the separation.
Time course analysis showed that the pH and surfactant concentration in the cell become
inhomogeneous during the ELF separation process. The zeta potential measurements revealed
that the s-SWCNTs are much more negatively charged than m-SWCNTs in the specific pH
range. The mechanism of ELF separation of m- and s-SWCNTs is attributed to the dynamicchanging/balancing of the electrophoretic and electroosmotic forces acting on the different
SWCNTs.
[1] K. Ihara, H. Endoh, T. Saito, F. Nihey, J. Phys. Chem. C 115, 22827 (2011).
[2] H. Numata, K. Ihara, T. Saito, H. Endo, F. Nihey, Appl. Phys. Express 5 055102 (2012).
[3] S. Ohmori, K. Ihara, F. Nihey, Y. Kuwahara, T. Saito, RSC Adv. 2 12408 (2012).
Corresponding Author: T. Saito
Tel: +81-29-861-4863, Fax: +81-29-861-4413,
E-mail: takeshi-saito@aist.go.jp

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3S-7
Multifunctional carbon nanomaterials for biomedical applications
Alberto Bianco
University of Strasbourg, CNRS, Immunology, immunopathology and therapeutic chemistry,
UPR 3572, 67000 Strasbourg, France
Carbon-based nanomaterials are considered unique systems for many applications indifferent fields including biomedicine. All these carbon forms are offering the possibility oforiginal chemical functionalization and design of complex multifunctional systems that allow
further their exploitation in therapy, imaging and diagnosis [1, 2].
In this presentation, I will describe the chemical strategies to functionalize different carbon
nanomaterials with appropriate functional groups and therapeutic molecules in view of theirbiomedical applications. I will also present few example of their use in therapy (i.e. cancer) [3,4] and imaging (i.e. ultrasonography and MRI) [5].
In addition, the intense research activity on applications of carbon materials imperatively
needs a strong association with the assessment of their safety profile [6]. We have evidenced acorrelation between the structure and the chemical nature of the different materials and theirpotential toxicity. In this context, I will describe how it is possible to enhance thebiodegradability and tune the toxic effects of these different materials [7-11].
[1] K. Kostarelos, A. Bianco, M. Prato, Nat. Nanotech. 4, 627 (2009).
[2] G. Reina, G.; J. M. González-Domínguez, A. Criado, E. Vázquez, A. Bianco, M. Prato, Chem. Soc. Rev. 6,4400 (2017).
[3] I. Marangon, C. Ménard-Moyon, A. K. A. Silva, A. Bianco, N. Luciani, F. Gazeau, Carbon 97, 110 (2016).
[4] J. Russier et al. Angew. Chem. Int. Ed. 56, 3014 (2017).
[5] L. Delogu et al. Proc. Natl. Acad. Sci., USA 109, 16612 (2012).
[6] A. Bianco, Angew. Chem. Int. Ed. 52, 4986 (2013).
[7] H. Ali-Boucetta et al. Angew. Chem. Int. Ed. 52, 2274 (2013).
[8] R. Kurapati et al. Small 11, 3985 (2015).
[9] A. R. Sureshbabu et al. Biomaterials 72, 20 (2015).
[10] R. Kurapati et al. 2D Materials 5, 015020 (2018).
[11] R. Kurapati et al. Angew. Chem. Int. Ed. 57, 11722 (2018).
Corresponding Author: A. Bianco
Tel: +81-75-753-6833, Fax: +81-75-753-6833,
E-mail: a.bianco@ibmc-cnrs.unistra.fr

-7-

招待講演
Invited Lecture

1I–1 ～ 1I–2
2I–3 ～ 2I–4
3I–5

1I-1
Atomic Scale Stability of Nano-Sized Tungsten-Cobalt Intermetallic
Compounds in Reactive Environment at High Temperature

Feng Yang and Yan Li
College of Chemistry and Molecular Engineering, Peking University, Beijing 100871,
China
Revealing the catalyst structure and chemistry in the reactive environment at theatomic scale is imperative for the rational design of catalysts as well as the investigationof reaction mechanism for the synthesis of single-walled carbon nanotubes, while insitu characterization at the atomic scale in high temperature (>700 oC) is still a greatchallenge. Here, tracking intermetallic Co7W6 nanoparticles with a defined structure
and a high melting point by in situ environmental transmission electron microscope incombination with synchrotron X-ray absorption spectroscopy, we directly present thestructural and chemical stability of the Co7W6 nanocrystals in methane, carbon
monoxide, and hydrogen at the temperature of 700–1100 oC. The evidences are in situ
and real time. They are of both atomic scaled resolution and collective information.
This research offers an example of systematic investigation at atomic scale on catalysts
under reactive condition.

Corresponding Author: Yan. Li
Tel & Fax: +86-10-6275-6773
E-mail: yanli@pku.edu.cn

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1I-2
New Developments in the Science and Applications ofWafer-Scale Crystalline Carbon Nanotube Films
Weilu Gao,1 Natsumi Komatsu,1 Fumiya Katsutani,1 Kazuhiro Yanagi,4 and Junichiro Kono1-3
Department of Electrical and Computer Engineering, 2Department of Physics andAstronomy, and 3Department of Materials Science and NanoEngineering, Rice University,
Houston, Texas 77005, U.S.A.
4
Department of Physics, Faculty of Science and Engineering, Tokyo Metropolitan University,
Hachioji, Tokyo 192-0397, Japan
1

Recently, we have developed a controlled vacuum filtration method for the preparation ofwafer-scale films of crystalline chirality-enriched single-wall carbon nanotubes, and such
films have enabled new fundamental studies and applications [1]. In this talk, we will first
discuss the controlled vacuum filtration technique [2,3], and then summarize recent
discoveries in optical spectroscopy studies and optoelectronic device applications using films
prepared by this technique. These include the observation of intersubband plasmons [4],microcavity exciton polaritons with polarization-dependent ultrastrong coupling [5], isotropic
Seebeck coefficient with anisotropic electrical conductivity [6], and the direct observation ofcross-polarized excitons [7].
1.
2.

3.
4.

5.

6.

7.

W. Gao and J. Kono, “Science and Applications of Wafer-Scale Crystalline Carbon Nanotube Films
Prepared through Controlled Vacuum Filtration,” arXiv:1810.02928.
X. He, W. Gao, L. Xie, B. Li, Q. Zhang, S. Lei, J. M. Robinson, E. H. Hároz, S. K. Doorn, R. Vajtai, P. M.
Ajayan, W. W. Adams, R. H. Hauge, and J. Kono, “Wafer-Scale Monodomain Films of Spontaneously
Aligned Single-Walled Carbon Nanotubes,” Nature Nanotechnology 11, 633 (2016).
N. Komatsu, W. Gao, P. Chen, C. Guo, A. Babakhani, and J. Kono, “Modulation-Doped Multiple Quantum
Wells of Aligned Single-Wall Carbon Nanotubes,” Advanced Functional Materials 27, 1606022 (2017).
K. Yanagi, R. Okada, Y. Ichinose, Y. Yomogida, F. Katsutani, W. Gao, and J. Kono, “Intersubband
Plasmons in the Quantum Limit in Gated and Aligned Carbon Nanotubes,” Nature Communications 9, 1121
(2018).
W. Gao, X. Li, M. Bamba, and J. Kono, “Continuous Transition between Weak and Ultrastrong Couplingthrough Exceptional Points in Carbon Nanotube Microcavity Exciton–Polaritons,” Nature Photonics 12, 362(2018).
K. Fukuhara, Y. Ichinose, H. Nishidome, Y. Yomogida, F. Katsutani, N. Komatsu, W. Gao, J. Kono, and K.
Yanagi, “Isotropic Seebeck Coefficient of Aligned Single-Wall Carbon Films,” Applied Physics Letters 113,243105 (2018).
F. Katsutani, W. Gao, X. Li, Y. Ichinose, Y. Yomogida, K. Yanagi, and J. Kono, “Direct Observation of
Cross-Polarized Excitons in Aligned Single-Chirality Single-Wall Carbon Nanotubes,” Physical Review B
99, 035426 (2019).

Corresponding Author: J. Kono
Tel: +1-713-348-2209
E-mail: kono@rice.edu- 10 -

2I-3
FC-CVD of SWNTs with Pre-made Bimetallic catalysts and the Effect ofSulphur○ Saeed Ahmed, Yongping Liao, Aqeel Hussain, Qiang Zhang, Er-Xiong Ding, Hua Jiang
and Esko I. Kauppinen
Department of Applied Physics, Aalto University School of Science, Puumiehenkuja 2, 00076
Aalto, Finland
We studied systematically effect of catalyst composition on yield, morphology, conductivity
and helicity of SWNTs grown with the floating catalyst chemical vapor deposition (FC-CVD).
To the best of our knowledge, this is the first report on single-step synthesis of SWNTs withwell characterized, both monometallic(Fe, Co, Ni) as well as bimetallic (Co-Ni, Co-Fe) catalyst
particles with 3 nm mean diameter made via physical vapor condensation i.e. the spark
discharge method. Ethylene was used as the carbon source and nitrogen with 20 vol. % ofhydrogen as the carrier gas at the 1050 oC synthesis temperature. Optical characterizations
revealed that as-grown SWNTs have high quality and their mean diameter is around 1 nm.
Moreover, SWCNTs synthesized by bimetallic Co-Ni catalyst have very unique opticalproperties compared to others. Furthermore, from unambiguous electron diffraction (ED)technique, we observed that Co-Ni can produce comparatively narrower chirality and diameter
distribution. In addition, we studied the effect of adding sulphur via introducing H2S into thereactor.
Corresponding Author: E. Kauppinen
Tel: +358-40-509-8064, Fax: +358-9-2451-3517,
E-mail: esko.kauppinen@aalto.fi[1], [2][3][4][5][6]
[1]
[2]
[3]
[4]
[5]
[6]

D. Sun et al., “Flexible high-performance carbon nanotube integrated circuits,” Nat. Nanotechnol., vol. 6,
no. 3, pp. 156–161, Mar. 2011.
D.-M. Sun et al., “Mouldable all-carbon integrated circuits,” Nat. Commun., vol. 4, pp. 1–8, 2013.
A. E. Islam, J. A. Rogers, and M. A. Alam, “Recent Progress in Obtaining Semiconducting Single- Walled
Carbon Nanotubes for Transistor Applications,” Adv. Mater., vol. 27, pp. 7908–7937, 2015.
Q. Cao, S. Han, G. S. Tulevski, A. D. Franklin, and W. Haensch, “Evaluation of Field-Effect Mobility andContact Resistance of Transistors That Use Solution-Processed Single-Walled Carbon Nanotubes,” ACS
Nano, vol. 6, no. 7, pp. 6471–6477, 2012.
E. A. Laird et al., “Quantum transport in carbon nanotubes,” Rev. Mod. Phys., vol. 87, no. 3, pp. 703–764,
2015.
P. Stokes and S. I. Khondaker, “High quality solution processed carbon nanotube transistors assembled bydielectrophoresis,” Appl. Phys. Lett., vol. 96, p. 83110, 2010.

[1] D. Sun et al. Nat. Nanotechnol. 6, 156 (2011).
[2] D.-M. Sun et al. Nat. Commun. 4,2302 (2013).
[3] A. E. Islam, J. A. Rogers, and M. A. Alam Adv. Mater. 27, 7908 (2015).
[4] Q. Cao, S. Han, G. S. Tulevski, A. D. Franklin, and W. Haensch ACS Nano 6, 6471 (2012).
[5] E. A. Laird et al. Rev. Mod. Phys. 87, 703 (2015).
[6] P. Stokes and S. I. Khondaker Appl. Phys. Lett.96, 83110 (2010).

- 11 -

2I-4
NEDO-TSC’s future efforts in 2-D materials R&D○Takayuki Iseki
Technology Strategy Center (TSC), New Energy and Industrial Technology Development
Organization (NEDO), Kanagawa 224-8550, Japan
Since the discovery of carbon nanotube (CNT) by Dr. Iijima in 1991 [1], NEDO has been
supporting R&D of nanocarbon materials and their applications. Particularly since 2014,
graphene research has been included in NEDO’s nanocarbon practical utilization project [2].
Through this project, large-area Roll-to-Roll graphene plasma growth method [3] andmultilayered graphene X-ray beam sensor for large-scale particle accelerators have beendeveloped and the latter has been commercialized [4]. This project was completed in 2016 andsome of the application research activities are now being conducted in another project [5].
Today, not only graphene but also another two-dimensional (2-D) materials such astransition metal dichalcogenides (TMD), black phosphorene and h-BNs are widely studied.
2-D materials are expected to offer higher potential for technology innovation because of theirunique electrical characteristics.
In Japan, the SATL (Science of Atomic Layers) research project was conducted by JSPS
(Japan Society for the Promotion of Science) from 2013 to 2017, and since 2014, 2-D
materials project has been conducted by JST-CREST. The Japanese government considers
TRL (Technology readiness level) transition with three project steps the most ideal R&D
scheme. TRL includes JSPS, JST and NEDO projects (Fig.1). NEDO-TSC is responsible for
producing R&D strategies of national project by backcasting of the possible socioeconomic
status and forecasting from the current technology trend. Attainment of excellent 2-D
materials research results are anticipated in order to realize the NEDO/TSC strategy.
Needs oriented

Seeds oriented
Government

JST Project

MEXT

JSPS

JST A-step

NEDO(Subsidy program)

NEDO Project

Government

METI

SIP (Strategic Innovation Program)

TRL

1

2

3

4

Invention
Discovery

Scientificelucidation

Proof ofconcept

Test(Lab. level)

Fundamentals
Basic science

5
Test(User level)

6

Government

Cabinet office

Applied science ~ Technology level-up

87System demo Top-user test

Demonstration

Pilot plant

Practical application

Fig.1 Japanese national projects stages and TRL. (Source : NEDO-TSC)[1] S. Iijima, Nature, 354 (1991), page 56–58[2] https://www.nedo.go.jp/activities/ZZJP_100020.html (In Japanese)[3] T. Yamada et al, Thin Solid Films, Volume 532(2013), Pages 89-93[4] A. Tatami et al, AIP Conference Proceedings 1962, 030005 (2018);[5] https://www.nedo.go.jp/activities/ZZJP_100119.html (In Japanese)
Corresponding Author: Takayuki Iseki
Tel: +81-44-520-5150, Fax: +81-44-520-5204,
E-mail: isekitky@nedo.go.jp- 12 -

9
Mass
Production

3I-5
Graphene-based reflectarrays for wireless terahertz communications
Arka Karmakar1, Farah Vandrevala1, Arjun Singh1, Josep M. Jornet1 and Erik Einarsson1,2
Department of Electrical Engineering, University at Buffalo, Buffalo, NY USA
Department of Materials Design and Innovation, University at Buffalo, Buffalo, NY USA
1

250
200
150
100
50
0
-50
-100
-150

50 µm

-200

Electric field strength / V m-1-250

after patterning
before patterning

Intensity / arb. u.

Edholm’s law of bandwidth describes theobservation that wireless data rates havedoubled approximately every 18 months. If
this trend continues, we should cross the
terabit-per-second threshold very soon, butconventional technologies are not capable ofsuch speeds. Graphene may enable this next
generation of wireless technology [1] due toits unique ability to support surface plasmon
polaritons at terahertz frequencies [2].
In pursuit of this idea, we design, model,
fabricate, and characterize all-graphene andmetal–graphene antenna designs [3,4]. Using
time-domain THz spectroscopy, we extract
graphene’s complex optical properties as wellas the response of the antenna arrays [5].
A metal–graphene hybrid reflectarray andthe corresponding simulated response areshown in the upper part of Fig. 1. The lower
part of the same figure shows the graphene
quality was unaffected by the fabrication
process. The design was for 1.5 THz, andspectroscopic characterization shown in Fig. 2
reveals a clear reflection enhancement at 3λ/2.
Graphene affects this response, suggesting thereflected power should be tunable bymodifying graphene’s electrical conductivity.

λex = 488 nm
1400

1600

1800

2000

2200

2400

2600

2800

Raman shift / cm −1

Fig. 1 (Top) Optical micrograph showing an arrayof gold antennas fabricated atop continuous
graphene. Inset shows a numerical simulation of
the electric field response. Scale bar applies toboth images. (Bottom) Normalized Raman spectra
obtained before and after graphene patterning.
1.1

Relative re�ectance

2

1.05

metal array only
array + graphene
substrate reference

1[1] A. F. Akyildiz and J. M. Jornet, IEEE Wireless
0.95
Comm. Mag. 17 (2010) 58.
1
2
3
4
5
Frequency / THz[2] A. H. Castro Neto et al., Rev. Mod. Phys. 81 (2009)
Fig. 2 THz reflectance measured relative to the109.
underlying Si substrate. Increased reflectance is[3] L. Zakrajsek et al., IEEE Ant. Wireless Prop. Lett.
apparent at 4.5 THz, and is weakened by the
15 (2015) 1553.
presence of underlying graphene.
[4] A. Karmakar et al., in NANOCOM '18: Proceedingsof the 5th ACM International Conference on Nanoscale Computing and Communication, Reykjavík (2018).
[5] F. Vandrevala et al., in NANOCOM '18: Proceedings of the 5th ACM International Conference on NanoscaleComputing and Communication, Reykjavík (2018).
Corresponding Author: E. Einarsson
Tel: +1-716-645-5089, E-mail: erikeina@buffalo.edu- 13 -

一般講演
General Lecture

1 – 1 ～ 1 – 10
2 – 1 ～ 2 – 12
3 – 1 ～ 3 – 11

1-1
Carbyne@CNT on a film scale formed after field emission:
Characterization by Raman and TEM
Satoshi Toma1, Koji Asaka1, Satoshi Kashiwaya1, Tomonari Wakabayashi2
and ○Yahachi Saito3
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan3
Toyota Physical and Chemical Research Institute, Nagakute 480-1192, Japan
1

2

Carbyne, an infinite carbon chain, has attracted much interest and induced significant
controversy for many decades. Recently, long linear carbon chains (LCCs) confined stably
inside carbon nanotubes (CNTs), which were produced by arc-discharge [1] andhigh-temperature annealing [2], have been reported. We accidentally discovered a novel
method to produce long LCCs encapsulated inside single-wall CNTs (SWCNTs) on a film
scale after field emission (FE) experiments of SWCNT films, as reported in Ref. 3. In thepresent report, additional findings obtained especially by Raman spectroscopy are presented.
After a thick film of eDIPS SWCNT (Meijo Nano Carbon) underwent a severe FE
experiment, long LCCs encapsulated inside SWCNTs (Fig. 1) as well as double-wall andtriple-wall CNTs were found in the film. Long LCCs inside CNTs are longer than 30 nm(i.e., more than 230 carbon atoms). Beside transmission electron microscopy (TEM),
Raman scattering spectroscopy of SWCNT films containing carbyne@CNT was carried out
using several excitation laser wavelengths (355, 532, 671 and 785nm) at room temperature.
At 532 nm laser excitation, a prominent LCC peak at around 1860 cm-1 originating fromlongitudinal optical phonons of carbyne(long polyyne) as shown in Fig. 2, where
2nd and 3rd harmonics of the LCC peak areclearly observed.
FWHM of thefundamental LCC band at 532 nm excitation
Fig. 1 TEM picture of a long LCC inside SWCNT.
is relatively wide ca. 200 cm-1, suggesting it
is composed of several components. At 671
nm excitation, split LCC peaks ranging from1790 to 1850 cm-1, being red-shifted, wereobserved. On the other hand, at 355 and 785
nm excitations, no LCC peak was observed.
These observations indicate strong resonant
Raman scatterings at excitation photons (1.85 2.33 eV) which match with energy gaps of thepresent long LCCs.
Raman measurement at 671 nm excitation
was conducted by Nanophoton Corp.
Fig. 2 Raman spectrum from a SWCNT film
containing LCC@CNT.
[1] X. Zhao et al, Phys. Rev. Lett. 90 (2003) 187401.
[2] L. Shi et al, Nature Mater. 15 (2016) 634.
[3] S. Toma, K. Asaka, M. Irita, and Y. Saito, Surf. Interface Anal. 51 (2019) 131.
Corresponding Author: Y. Saito
Tel: +81-561-57-9516, Fax: +81-561-63-6302, E-mail: ysaito@toyotariken.jp- 15 -

1-2
Isolation of Single-wired Transition Metal Monochalcogenides by
Carbon Nanotubes○Yusuke Nakanishi1, 2, Masataka Nagata2, Shivani Shukla3, Zheng Liu4, 5, Yung-Chang Lin5,
Takuma Shiga6, Yuto Nakamura7, Takeshi Koyama7, Hideo Kishida7, Kazu Suenaga5, andHisanori Shinohara1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan.
2
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan.
3
Department of Materials Science & Engineering, Carnegie Mellon University, PA, USA.
4
National Institute of Advanced Industrial Science & Technology, Nagoya 463-8560, Japan.
5
National Institute of Advanced Industrial Science & Technology, Tsukuba 464-8602, Japan.
6
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
7
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan.
The successful isolation of single-layers from 2D van der Waals (vdW)-layered materials
has opened new frontiers in materials science. Their discovery and unique properties laid thefoundation for exploring 1D counterparts. However, the isolation of 1D vdW-wired materials
has thus far remained a challenge due to inefficient techniques. In theory, single-wires ofsome vdW-wired materials could possess electronic properties distinct from their bulk
counterparts [1, 2], although this has never been fully verified by experiments.
Here we report the facile isolation of transition metal monochalcogenide MoTe nanowires(MoTeNWs) by using carbon nanotubes (CNTs) as templates. Individual MoTeNWs are
perfectly separated by CNTs with a minimal interaction, allowing easy handling and detailed
characterization of MoTeNWs. Atomic-resolution transmission electron microscopy revealed
unusual torsional motions absent in their bundles (Figure 1). Our findings indicate theirpotential for building blocks of electromechanical switching devices.

Fig. 1 (a) Schematic of dynamic movements of MoTeNWs. (b) Experimental and (c) Simulated STEM
image of a twisted MoTe confined in a single CNT. Scale bar, 1 nm.
[1] I. Popov et al. Nano Lett. 8, 4093 (2008).
[2] Y. Yu et al. Nano Lett. 18, 675 (2018); H. Zhu et al. Adv. Mater. 29, 1606264 (2017).
Corresponding Author: Y. Nakanishi
Tel: +81-42-677-2449 (3324)
E-mail: naka24ysk@tmu.ac.jp- 16 -

1-3
Enhancement of Excitonic Valley Polarization by Carrier Dopingin Monolayer WSe2
○Keisuke Shinokita1, Xiaofan Wang1, Yuhei Miyauchi1, Kenji Watanabe2, Takashi
Taniguchi2, Kazunari Matsuda1
1Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan
2
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba
305-0044, Japan
Atomically thin transition metal dichalcogenides (TMDs) is ideal two-dimensional systemand possesses valley degrees of freedom inherently, making monolayer (1L) TMDs an
excellent platform to explore new physics and applications [1]. The exploits of the valley
degrees of freedom require high valley polarization by overcoming the ultrafast valley
relaxation processes. Here we report that intentional carrier doping could suppress the valley
relaxation process by fine-tuning of Coulomb screening.
We investigated the effect of carrier doping on valley depolarization process using
photoluminescence (PL) measurement on 1L-WSe2. Figure 1(a) shows colormap of the PL
spectra of 1L-WSe2 on Si/SiO2 substrate as a function of applied gate voltage using
field-effect-transistor structure at 70 K. The gate voltage controlled doped carrier density,
which is clearly observed in appearance of charged exciton (T+, T-) in addition to neutral
exciton (X). Figure 1(b) shows the PL spectra with gate voltages of −12 V (circles). Figure1(c) shows polarization-resolved PL spectra with various gate voltages, under σ+ excitation
corresponding to K valley excitation. The σ+ component of the PL spectra of the neutral
exciton (closed circles) has a higher intensity (a) 0 PL intensity (norm.) 1 (b)140
1L-WSeV =-12V
Chargedthan the σ- component of the PL spectra (openT
exciton T
T=70 K
T=70 K20
circles) under gate voltage of −4 V. The
V
photoexcited excitons are more populated in0
Neutralexciton X
Localized
the pumped K valley, which corresponds to theX-20
excitonvalley-polarized state of the excitons (valleyT-40
0
polarization). By increasing the hole density
1.66 1.68 1.70 1.72 1.74 1.76 1.66 1.68 1.70 1.72 1.74 1.76
Energy (eV)Energy (eV)by decreasing the gate voltage from -4 V to (c)2.5
V =-4 V
-12 V
-20 V
-12 V and -20 V, the difference between the σ+
T=70 K
2.0
and σ− component increased, showing theI
1.5
Ivalley polarization of the neutral exciton was
1.0
enhanced. The results indicate the intentional
0.5carrier doping suppressed valley relaxation
0.0
1.73 1.74 1.75 1.73 1.74 1.75 1.73 1.74 1.75
between the K and −K valleys by screening
Energy (eV)the momentum-dependent long-range e–h Fig.1: (a) Contour plot of PL spectra of 1L-WSe2
as a function of applied gate voltage at 70 K. (b)exchange interactions [2, 3].

- 17 -

0

PL intensity (a.u.)

Gate voltage VGate (V)PL intensity (norm.)[1] X. Xu et al., Nat. Phys. 10, 343 (2014).
[2] Y. Miyauchi et al., Nat. Commun. 9, 2598 (2018).
[3] K. Shinokita et al., submitted for publication.
Corresponding Author: K. Shinokita
Tel: +81-774-38-3465, FAX: +81-774-38-4567,
E-mail: shinokita.keisuke.4r@kyoto-u.ac.jp

2

-

+

Gate

+

Gate

σ+
σ-

PL spectra at the gate voltage of −12 V (circles),and a spectral fitting using Voigt functions(curves). The shaded peak shows the exciton PL(X). (c) Polarization-resolved PL spectra under σ+
excitation at various gate voltages. The red andblue circles show the σ+ and σ− PL intensities,
respectively. The spectra were normalized with theσ- intensity of the neutral exciton.

1-4
STM images of graphene/C-doped h-BN heterostructuresfrom first-principles electronic-structure calculations○Taishi Haga 1, Yoshitaka Fujimoto 1, Susumu Saito 1,2,3
12

Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
Advanced Research Center for Quantum Physics and Nanoscience, Tokyo Institute ofTechnology, Tokyo 152-8551, Japan
3
Materials Research Center for Element Strategy, Tokyo Institute of Technology,
Kanagawa 226-8503, Japan

Hexagonal boron nitride (h-BN) is a wide-gap semiconductor in contrast to graphene while
h-BN has a honeycomb lattice structure in each layer similar to graphene. Therefore, h-BN
attracts much attention not only as substrate for graphene and other 2D materials but also
itself as future nanoelectronics materials. Defects in semiconductor often play an importantrole to determine and modulate the electronic properties of the system. Actually, it has beensuggested that defects in h-BN substrate affects transport properties of graphene [1,2].
Therefore, it is important to investigate how a impurity in h-BN substrate affects theelectronic properties of graphene. In the present work, we study the effect of impurity state
induced by carbon atom doped at the B site and that at the N site in h-BN substrate layers on
the electronic structure of the graphene/h-BN heterostructures using first-principles
calculations within the framework of the density functional theory (DFT) [3]. Furthermore,
we simulate scanning tunneling microscopy (STM) images of the C-doped heterostructues. It
is found that substitutional doping of the C atom at the B site and that at the N site inunderlying h-BN lead to asymmetric charge carrier concentrations in the graphene layer. It isalso found that the C impurity at the N site affects electronic states of the system up to surface
graphene layer, and it can be visualized even in the case of the doping in the third h-BN layer[Fig.1], while the C impurity at the B site does not change the STM image of the graphene
layer on the pristine h-BN.
(a)

(b)

(c)

Figure 1 Simulated STM images of graphene on C-doped h-BN substrate model. The
doped C atom is at N site in the (a) first layer, (b) second layer, (c) third layer of h-BN.
[1] D. Wong et al., Nat. Nanotechnol. 10, 949 (2015).
[2] T. Kaneko, M. Koshino, and R. Saito, Phys. Rev. B 95, 125421 (2017).
[3] T. Haga, Y. Fujimoto, and S. Saito, to be published.
Corresponding Author: T. Haga
E-mail: haga.t@stat.phys.titech.ac.jp- 18 -

1-5
Sedimentation particle size analysis of carbon nanotube aggregates○Yuichi Kato, Takahiro Morimoto, Kazufumi Kobashi, Takeo Yamada, Toshiya Okazaki,
Kenji Hata
CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Measuring particle size distribution of carbon nanotube (CNT) aggregates in liquids isimportant for evaluating debundling, size reduction, dispersion stability, and film formation
properties from their dispersions. Here we propose a method to determine “universal”
sedimentation particle diameter with a disk centrifuge.
We found a phenomenon that the Stokes diameter (𝐷𝐷stokes ) of CNT aggregates decreases as
the rotation speed (𝜔𝜔) increases (Fig. 1, dashed lines). This indicates that particle sedimentation
can not be interpreted by the common Stokes equation (1),𝑢𝑢 =Δ𝜌𝜌𝐷𝐷stokes 2 𝑅𝑅𝜔𝜔 2
18𝜂𝜂

(1)

Normalized Extinction

where 𝑢𝑢 is the sedimentation velocity, Δ𝜌𝜌is the difference of density between particle
and fluid, 𝑅𝑅 is the disk radius, and 𝜂𝜂 is the
Buoyancy
=2k/s =1k/s
viscosity. The 𝐷𝐷stokes is not suitable for
Density difference
representing particle size distribution forof fluid
CNT aggregates. As a result of investigating
several hypotheses explaining this Stokes
diameter dependence of the rotation speed, it
is found that the Stokes diameter change can
4
10
20
30
be explained by the buoyancy caused by the
Diameter (m)density difference between the inner fluid ofFig. 1 Sedimentation particle diameter distribution of
the particle and the outer fluid (Fig. 1, inset CNT aggregate measured with a disk centrifuge. (dashedillustration). This buoyancy slows the particle lines): 𝐷𝐷stokes , (solid lines): 𝐷𝐷corrected .
sedimentation. The density difference
between inner and outer fluids increases when the particle sediments in the density gradientsolution. The density difference then decreases due to the diffusion of sucrose into the inner
fluid.
The corrected sedimentation particle diameter (𝐷𝐷corrected ) can be obtained by using therelation between the sedimentation velocities and the rotation speeds based on the simple
equation (2),Δ𝜌𝜌𝐷𝐷corrected 2 𝑅𝑅𝜔𝜔2(2)
𝑢𝑢 =𝑑𝑑𝜌𝜌𝑓𝑓,𝑒𝑒2218𝜂𝜂 + 𝜏𝜏
𝜙𝜙𝐷𝐷corrected 𝑅𝑅𝜔𝜔
𝑑𝑑𝑑𝑑
𝑑𝑑𝜌𝜌
where 𝜏𝜏 is the time constant of diffusion of sucrose, 𝑑𝑑𝑑𝑑𝑓𝑓,𝑒𝑒 is the density gradient, and 𝜙𝜙 isthe porosity of the particle.
Corresponding Author: Toshiya Okazaki
Tel: +81-29-861-4173, Fax: +81-029-861-4851
E-mail: toshi.okazaki@aist.go.jp- 19 -

1-6
One-dimensional van der Waals heterostructure nanotubes:
synthesis and characterization○Rong Xiang,1* Yongjia Zheng,1 Taiki Inoue,1 Shohei Chiashi,1 Shigeo Maruyama1,2*
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy NanoEngineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba. 305-8564, Japan

Recently, we proposed a conceptually new structure, in which single- or few-walled
hexagonal boron nitride nanotube (BNNT) and/or MoS2 nanotube seamlessly wrap around asingle-walled carbon nanotube (SWCNT), and result in an atomically smooth coaxial
nanotube consisting different materials. As different shells are stacked by van der Waals(vdW) force and in one-dimensional (1D) geometry, we name it “1D vdW heterostructure”.[1]Electron energy loss spectroscopy mappings reveal the composition of co-axial structure(Figure 1) and TEM/STEM direct imaging together with electron diffractions confirm eachlayer is single-crystal nanotube.
However, the current synthesis technique is still in its early stage, and locating theheterostructure relies mostly on TEM. In this presentation, we will further demonstrate ourefforts on the controlled synthesis and characterizations of this new structure. 1D vdWheterostructure nanotubes can now be synthesized on longer, and mostly isolated SWCNTs
suspended on micro-pillars or TEM micro-grids, which allows us to take opticalcharacterizations on this structure at single-nanotube level. Furthermore, we present a directcomparison between TEM and SEM contrast for the same nanotube, suggesting that SEM
may be employed as a quick assessment for such 1D vdW heterostructure nanotubes.

Figure 1 Overview of 1D vdW heterostructures. (a) A one dimensional Lego block showing the concept of
this work; (b) the atomic model of one material built in this study: metal-insulator-semiconductor (M+I+S) 1D
vdW heterostructures; (c-f) TEM image and EELS mapping of a SWCNT-BNNT 1D vdW heterostructure.
[1] R. Xiang et al., arXiv:1807.06154
Email: xiangrong@photon.t.u-tokyo.ac.jp (RX); maruyama@photon.t.u-tokyo.ac.jp (SM).

- 20 -

1-7
Diameter-Dependent Superconductivity in Individual WS2 Nanotubes○Feng Qin1, Toshiya Ideue1, Wu Shi1, 2, Xiao-xiao Zhang3, Masaro Yoshida4, Alla Zak5,
Reshef Tenne6, Tomoka Kikitsu4, Daishi Inoue4, Daisuke Hashizume4, Yoshihiro Iwasa1, 4
1

Quantum Phase Electronics Center (QPEC) and Department of Applied Physics,
The University of Tokyo, Tokyo, Japan.
2
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, USA.
3
Quantum Matter Institute, University of British Columbia, Vancouver, Canada.
4
RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan.
5

Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.
6
Faculty of Sciences, Holon Institute of Technology, Holon, Israel.

Superconductivity in low dimensional Transition Metal Dichalcogenides (TMD) materials
has been attracting significant attention in recent years. Among them, the TMD nanotube is afascinating platform for researching superconductivity because of its unique dimensionalities
and geometries. Here we report the first observation of superconductivity in an individual
multi-walled tungsten disulfide (WS2) nanotube [1], realized by electrochemical doping via
the liquid gating technique as shown in Fig. 1. Remarkably, for the first time, the chirality of
the nanotube has been confirmed in the superconducting state, and the chiral signal displays
an unprecedented quantum oscillation in conjunction with the periodic oscillating
magnetoresistance, known as the Little-Parks effect. In addition, the critical temperature ofsuperconductivity displays an unexpected linear behaviour as a function of the inverse
diameter, that is, the curvature of the nanotube [2]. The present results are an important step inunderstanding the microscopic mechanism of superconductivity in a nanotube, opening up a
new way of superconductivity in crystalline nanostructures.

Fig. 1. Schematic figure of liquid gating device and the diameter-dependent superconducting properties
in individual WS2 nanotubes.
[1] F. Qin et al., Nature Communications 8, 14465 (2017).
[2] F. Qin et al., Nano Letters, 18, 6789-6794 (2018).
Corresponding Author: F. Qin
Tel: 03-5841-6822(26822), Fax: 03-5841-6822(26822),
E-mail: qinfeng@mp.t.u-tokyo.ac.jp- 21 -

1-8
Synthesis of Heteroatom-doped Graphene as Active Catalysts for
Hydroquinones Oxidation Reaction○Masanori Hara, Prerna Joshi, Hsin-Hui Huang, Masamichi Yoshimura
Toyota Technological Institute, Nagoya 468-8511, Japanj / mA cm-2

1. Introduction
Recently, to overcome environmental and energy issues such as global warming anddepletion of fossil fuels, combining renewable energies with energy storage and supply
system has attracted attention to utilize renewable energies effectively. Direct-type fuel cell(DFC), where hydrogen carrier molecules [1,2] formed by surplus renewable energies areused as fuel, is one of the candidates of efficient energy supply systems. DFC has similar
constitution of polymer electrolyte fuel cell and requires specific catalysts for hydrogen
carrier molecule oxidation as anode. Improvement of the catalytic activity of the anode isimportant topic for practical applications. In the present study, we have synthesizedheteroatom, nitrogen and boron, doped graphene as catalysts for electro-oxidation reaction ofhydroquinones. We characterized the novel catalysts and evaluated its catalytic activity.
2. Experimental
Graphene oxide (GO) was prepared by Hummers’ method. The nitrogen and boron-doped
reduced graphene oxide, N-rGO and B-rGO, were synthesized by thermal annealing synthesis.
Briefly, mixture of GO and urea or B2O3 were heated at 800 or 1000˚C for 1 h, respectively.
Reduced graphene oxide (rGO) was prepared by thermal annealing at 150˚C for 2 h under 3%
H2 + Ar atmosphere. The rGO, N-rGO, and B-rGO were characterized by SEM-EDX, XPS,and electrochemical methods, LSV and RDE, in 0.1 M H2SO4 + 1 mM hydroquinones.
3. Results and discussion
The composition of the catalysts, 2.9 wt% of boron for B-rGO and 10.4 wt% of nitrogenfor N-rGO, were estimated by SEM-EDX and XPS characterization. Figure 1 shows LSV
curves of oxidation reaction of methyl-hydroquinone
1.5(Me-HQ) on rGO, N-rGO and B-rGO measured in
0.1 M H2SO4 + 1 mM Me-HQ. On rGO, oxidation
1.0
current of Me-HQ was observed from 0.56 V andreached to mass transport limiting current around0.5
0.82 V. On the other hand, potential of mass transportrGO
limiting region of the Me-HQ oxidation reaction
N-rGO
0
B-rGO
shifted to 0.77 and 0.70 V on N-rGO and B-rGO,-0.5
respectively. The LSV curves show that heteroatom
0.2
0.4
0.6
0.8
1.0
doped graphene catalysts have high activity for
E / V vs. RHE
Fig. 1 Linear sweep voltammogram of rGO,
hydroquinone oxidation. The present results suggest
N-rGO, and B-rGO in 0.1 M H2SO4 + 1 mM
that the heteroatom modified graphene is a promising
methyl hydroquinone solution. Scan rate: 5
candidate of anode for DFC.
mV s-1, Rotation rate: 1000 rpm.
[1] D. Sopchak, B. Miller, Y. Avyigal, R. Kalish, J Electroanal. Chem. 538 (2002) 39.
[2] B. Rausch, M. D. Symes, L. Cronin, J. Am. Chem. Soc. 135 (2013) 13656.
Corresponding Author: M. Hara
Tel: +81-52-809-1850, Fax: +81-52-809-1851,
E-mail: haram@toyota-ti.ac.jp- 22 -

1-9
Electrostatic properties of bilayer graphene nanoribbons under an external
electric field○Yanlin Gao, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba,
Tsukuba, 305-8571, Japan
Graphene has been attracting a great deal of attention in the fields of nanoscience andnanotechnology due to its peculiar physical property and extensive application prospects. The
atom thickness, high electrical conductivity, and remarkable chemical stability allow graphene
to be a promising material for field emission devices. In such devices, graphene exhibits richvariation in its morphologies, such as the functionalized edges, edge shape variations, surface
wrinkles, and step structures, depending on the fabricating conditions. Our previous works haveclarified that the field emission properties of graphene depends on its edge shape [1] andfunctionalization [2,3]. On the other hand, the knowledge about the electrostatic properties ofgraphene with surface wrinkles and step edges is insufficient to date. Therefore, in this work,
to understand the morphological effects arising from the multi-layered structures on fieldemission property of graphene, we investigated electrostatic properties of bilayer graphene
nanoribbons (GNRs) with different edge morphologies and interlayer stacking, using thedensity functional theory combined with the effective screening medium method.
Our calculations show that field emission property for the bilayer GNR depends on the edge
shape and the terrace width. Armchair bilayer GNRs have higher field emission current than
zigzag ones due to their lower potential barriers. Moreover, the potential barrier for bilayer
GNRs decreases with increasing the terrace
width irrespective of the edge shape, so that thefield emission current from bilayer GNRs
increases with increasing the terrace width forboth armchair and zigzag edges [Fig.1]. In
addition, for the edge morphology, we consider
the folded zigzag and armchair GNRs, and foundthat the field emission property is sensitive to thechirality of the folded moiety. Folded zigzag
GNRs have lower potential barrier, producing
higher field emission current compared withfolded armchair GNRs due to the absences of the Fig.1 Field emission current for bilayer GNRs
with different terrace width.
dangling bond and edge states.
Reference[1] Y. Gao and S. Okada, Appl. Phys. Lett. 112, 163105 (2018)[2] Y. Gao and S. Okada, Appl. Phys. Express 10, 055104 (2017)[3] Y. Gao and S. Okada, Carbon 142, 190-195, (2019)
Corresponding Author: Y. Gao
TEL: +81-29-853-5921, FAX: +81-29-853-5924
E-mail: ylgao@comas.frsc.tsukuba.ac.jp- 23 -

1-10
Geometric and electronic structures of three-dimensional polymerized
triptycene
Y. Fujii1, M. Maruyama1, and S. Okada1
1
Graduate School of Pure and Applied Science, University of Tsukuba, 1-1-1 Tennodai,
Tsukuba, Ibaraki305-8571, Japan
Triptycene is the Y-shaped hydrocarbon molecule composed of sp2 and sp3 C atoms, in which
three benzene rings are adjoined to two sp3 C atoms with D3h symmetry. Because themolecule possesses a threefold symmetry axis, it is able to form two-dimensional covalentframework in which the molecules are hexagonally arranged. Several polymeric forms of
triptycene have been indeed synthesized experimentally and they are energetically stable withpeculiar electronic band structures [1,2]. In addition, by stacking the two-dimensionallypolymerized layers of triptycene and connecting them each other via sp or sp2 C atoms, we
can get three-dimensional covalent networks, being expected to exhibit further interesting
variation in their electronic structure. Therefore, in the present work, each two-dimensional
covalent layer is connected via sp3 C atom with C2 chain (Fig. 1). Because of the negligible πelectron between the layers, the electronic structure of the three-dimensional networks reflectthat of the two-dimensional network: The three-dimensional networks still have peculiar
electronic band structure in its valence and conduction states consisting of the combination of
the Dirac cone and a flat dispersion band (Fig. 2). Total energy of the polymer is 128meV per
atom higher than that of benzene, indicating that the networks are energeticallystable.





1
0
-1
-2
-3
-4
-5

Fig. 1 (a) Top and (b) side views of an optimized structure of three-dimensional
triptycene polymer.

Fig. 2 Electronic structure ofthree-dimensional triptycene
polymer[1] Y. Fujii, M. Maruyama, K. Wakabayashi, K. Nakada, and S. Okada, J. Phys. Soc. Jpn. 87, 034704 (2018).
[2] Y. Fujii, M. Maruyama and S. Okada, Jpn. J. Appl. Phys. 57, 125203 (2018).
Corresponding author: Y. Fujii (yfujii@comas.frsc.tsukuba.ac.jp)- 24 -

2-1
Chirality engineering and metal-to-semiconductor transition of individual
CNTs by in situ TEM○ Dai-Ming Tang 1, Chang Liu 2, Yoshio Bando 1, Hui-Ming Cheng 2, Dmitri Golberg 1
1World Premier International Center for Materials Nanoarchitectonics, National Institute forMaterials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan2
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese
Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China

Chirality is a unique intrinsic structure for the carbon nanotubes (CNTs), determining theelectronic, physical and chemical properties. Controlling the chirality is one of the ultimate
goals for nanotube science. In recent years, progresses have been made by designing thecatalyst seeds for growing CNTs and chirality-specific growth has been realized by using thesymmetry matched stable solid catalysts.[1-3]
In the current work, we propose to use a new strategy to control the chirality of CNTs.
Instead of controlling the chirality of the whole nanotube, we are aiming at engineering thechirality of the nanotube segment. For example, by changing one segment of the metallic
nanotube into semiconducting, the whole nanotube will behave as a semiconductor.
As shown in Fig. 1a, we use a special in situ TEM-STM holder, on which two STM probes
are available, so that electrical pulses could be applied and electrical properties of transistors
could be measured.[4-8] The structure changes including the chirality could be monitored inreal-time (Fig. 1b-c). An interesting pattern of the chirality transitions has been unveiled thatthe chirality favors changing by continuous (1, 0) dislocations. Importantly,
metal-to-semiconductor transition has been realized (Fig. 1d), and an intramolecular Schottky
junction is fabricated. Our work not only provides
insights to the fundamental chirality dynamics but
also offers implications for the CNT based molecularelectronic devices. [9][1] J. R. Sanchez-Valencia et al., Nature 512, 61 (2014).
[2] F. Yang et al., Nature 510, 522 (2014).
[3] S. Zhang et al., Nature 543, 234 (2017).
[4] D.-M. Tang et al., Proc. Natl. Acad. Sci. USA 107, 9055
(2010).
[5] D. Golberg et al., Adv. Mater. 24, 177 (2012).
[6] D.-M. Tang et al., Nat. Commun. 5, 3631 (2014).
[7] D.-M. Tang et al., Nano Lett. 15, 4922 (2015).
[8] J. Han et al., Nat. Commun. 9, 402 (2018).
[9] D.-M. Tang et al., Ultramicroscopy 194, 108-116 (2018).
Corresponding Author: D.-M. Tang
Tel: +81-29-860-4949,
E-mail: Tang.Daiming@nims.go.jp- 25 -

Fig.1 Chirality engineering of individual CNT
by in situ TEM probing. (a) Twin-probe
TEM-STM holder. (b) TEM image of anengineered SWCNT transistor. (c) Electron
diffraction of individual CNT. (d) Transfer
curve of a CNT transistor demonstrating
metal-to-semiconductor transition

2-2
Derivation of breaking temperature of multi-walled carbon nanotube
by using in-situ TEM observations and I-V measurements◦Hitoshi Nakahara1, Kentaro Yamauchi1, Koji Asaka1, Yahachi Saito2, Satoshi Kashiwaya1
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan2
Toyota Riken, Yokomichi 41-1, Nagakute 480-1192, Japan- 26 -

40

Resistance Change ΔR [Ω]It is well known that a multi-walled carbon nanotube (MWNT) breaks in sequence from its outerlayer by direct current heating, but it is extremely
diﬃcult to experimentally measure the temperatureof the break point at the breaking moment. So that,
there is no report on breaking temperature at present.
In this research, we focused on the electric resistancechange during breaking of a MWNT, and propose a
new method to derive the temperature at the breaking moment.
Fig. 1 shows a electric resistance change versus
retreat distance during retraction of a broken outerlayer of MWNT as shown in inset TEM images. As
you can see, the resistance value increases almost
linearly with the retreat distance. Fig. 2 is anotherexperiment in which successive breaking of outerlayer from 13 layers to 5 layers occurred. In thiscase, it is impossible to observe outer layer moving
directly as shown in Fig. 1, because of the limitationin time resolution of our apparatus (20 ms). However, comparing the resistance change in Figs. 1 and
2 with calculated results of MWNT resistance, it ispossible to determine the retraction speed at the moment of breaking of the outer layer. Since the retraction of the outer layer is considered to be associated with the evaporation of carbon atoms at theend of the layer, the temperature can be derived fromthe retraction speed and the vapor pressure of carbon
atoms. By using this method, the result of estimating the temperature at the breaking moment of eachlayer in Fig. 2 was 3130±40 K, and no significant
layer number dependence was observed. Details ofderivation method and calculation model will be explained in the presentation.

30

20

10

0
0

2

4

6

8

10

Retreat Distance x [nm]Fig:1 Resistance change versus outer layer
retreat distance. Inset figures are TEM images at distances indicated by corresponding arrows. White up-arrows in TEM images indicate outer layer edge positions.
20

Resistance R [kΩ]

1

15

6
12 layers

7
8

10
9
12 11 1013

5

6 layers

0
0

1

2

3

4

Time t [s]Fig:2 Resistance change during successive
breaking of MWNT outer layer by direct
current heating. Numbers (n) with arrowheads indicate breaking time of n-th layer.
Inset figures are TEM images at time points
indicated by corresponding arrows.
Corresponding Author: H. Nakahara
Tel: +81-52-789-4659
E-mail: nakahara@nagoya-u.jp2-3
Semiconducting Carbon Nanotubes as Crystal Growth Templates andGrain Bridges in Perovskite Solar Cells○Il Jeon1, Seungju Seo1, Rong Xiang,1 Yang Yang2, Hiromichi Kataura3, Yutaka Matsuo1,4,
Shigeo Maruyama1,3
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Materials Science and Engineering, University of California, Los Angeles,
CA 90095, USA
3
National Institute of Advanced Industrial Science and Technology (AIST), 305-8564, Japan
4
Hefei National Laboratory for Physical Sciences at the Microscale, University of Scienceand Technology of China, Anhui 230026, China
12Perovskite solar cells (PSCs) have drawn a great deal of attention as an alternative energy
source owing to the high absorption coefficient, long-range diffusion length and high defecttolerance of the lead-halide perovskite photoactive layer. Although PSCs are considered to bepromising next-generation solar devices, further breakthroughs in terms of power conversion
efficiency (PCE) is necessary to supersede conventional silicon solar cells. In this regard, theperovskite grain size control and the passivation of grain boundaries are the key to obtaining
high PCE. In particular, inducing homogeneous nucleation while retarding the crystal growthis important for the grain size control. In addition, the passivation of grain surface has afavorable effect as structural disorders at the interface of the grains induce shallow trap states,
which lead to non-radiative recombination of localized charge carriers. Therefore,technologies aiming at controlling the grain size as well as passivating the grain interfaces
need to be developed.
Over the last two decades, carbon nanotubes have generated a lot of excitement among
researchers for their device applicability thanks to their exceptional charge carrier property
with outstanding chemical and mechanical stability. In particular, semiconducting
single-walled carbon nanotubes (s-SWNTs) possess a direct bandgap of up to 2 eV and highconductivity along the tube axis, qualifying for charge-transporting media in PSCs.
Herein, we demonstrate s-SWNTs dispersed in water functioning as both perovskite crystal
growth templates and charge transporters inside a perovskite layer, increasing the PCE of
PSCs from 18.1% to 19.5%. Chiral-selective sodium deoxycholate (DOC) surfactants not
only allowed the dispersion of s-SWNTs in water but also induced homogeneous and slow
crystal growth of the perovskite crystals. s-SWNTs on the surface of the perovskite grainsfunctioned as charge transporters at the grain interface as well.

Corresponding Author: Prof. S. Maruyama, Tel: +81-3-5841-6408, E-mail: maruyama@photon.t.u-tokyo.ac.jp- 27 -

2-4
Carrier accumulation in MoS2/MoSe2-FET by an external electric field○Mina Maruyama, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
Transition metal dichalcogenides (TMDCs) are representative semiconducting
two-dimensional materials which consist of transition metal atomic layer sandwiched bychalcogen atomic layers in prismatic manner. Thus, they are attracting much attention as forthe staring materials for designing van der Waals (vdW) heterostructures with TMDCs orother two dimensional materials, such as graphene and h-BN, by layer-by-layer stacking.
Because of the substantial wavefunction overlap between layers, the vdW heterostructures of
TMDCs exhibit versatile electronic structure, depending on the constituent layers, theirstacking sequence, and mutual stacking arrangements [1]. In our previous work, carrier
accumulations in MoS2/WS2 heterostructure is sensitive to mutual arrangements of theconstituent TMDC layer with respect to the gate electrode. Furthermore, the biaxial strain
further modulates the carrier distribution in the heterstructures. In this work, we investigate
carrier accumulation in vdW heterostuctures of MoS2 and MoSe2 under an external electricfield for providing a theoretical insight into carrier distribution with respect to the chalcogenspecies, using the density functional theory combined with the effective screening medium
methods.
Our calculations show that carrier accumulation in MoS2/MoSe2 heterostructure isinsensitive to the interlayer arrangement of TMDCs relative to the electrode. Furthermore, wefind that the carrier distribution also insensitive to the biaxial compressive/tensile strain, in
sharp contrast to the MoS2/WS2 heterosheet in the field-effect transistor (FET) structure
where the carrier distribution is sensitive to the biaxial strain and to the stacking arrangements.
This fact indicates that the transition metal species is the important factor to control the field
effect carrier accumulation in FET consisting of TMDC heterostructures.
[1] A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013).
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp- 28 -

2-5
Formation process of long range ordered structure in 1T-TiSe2 by electron
beam irradiation○Keita Kobayashi1, Hidehiro Yasuda 1, 2
1Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1,
Mihogaoka, Ibaraki, Osaka 567-0047, Japan
2
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka
University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan
1T-TiSe2 is a typical transition metal
dichalcogenide with a CdI2-type structure. Previously,
we reported that a multilayer 1T-TiSe2 flake withthickness of about 100 nm is induced formation of 2a
× 2a (where a is the original lattice constant) longrange ordered (LRO) structure by electron beamirradiation with an acceleration voltage of 125 kV [1].
Based on transmission electron microscope (TEM)
observations, we also considered that the LRO
structure originates from periodic distortion of Ti
atomic position [1]. However, it remains unclear thatdetailed formation process of the LRO structure in
1T-TiSe2.
Based on this background, we attempted to clarify
Fig.1 (a) TEM image of a 1T-TiSe2
formation process of the LRO structure in 1T-TiSe2
flake. (b and c) Selected area electron
induced due to electron beam irradiation by TEM
diffraction (SAED) patterns obtained
from areas "b" and "c" shown in theobservation. Consequently, we clarified that the
TEM image. To form the LRO structureformation process is not contributed by knock-on
in the 1T-TiSe2, only area "a" wasprocess and specimen heating due to inelastic
irradiated by condensed electron beam.
electron scattering. We, therefore, consider that the
Although area "b" had not be irradiatedformation process is induced by electronic excitationby condensed electron beam, both
SAED patterns show ordered reflectionof 1T-TiSe2 due to electron beam irradiation.
attributed to formation of the LRO
Moreover, we found that the LRO structure is not
structure.
only formed in the area irradiated by condensed
electron beam but also enlarged to the adjacentunirradiated area (Fig. 1). Since specimen heating due to electron beam irradiation does notcontribute to formation of the LRO structure and electron beam broadening through the
1T-TiSe2 flake due to electron scattering can be considered to be negligible, we consider thatthe enlargement of the LRO structure may be proceeded due to chain chemical reaction.
[1] K. Kobayashi, H. Yasuda, Mater. Res. Express 5, 085006 (2018).
Corresponding Author: K. Kobayashi
Tel: +81-6-6879-7941, Fax: +81-6-6879-7942,
E-mail: kobayashi-z@uhvem.osaka-u.ac.jp- 29 -

2-6
Energetics and electronic structures of in-plane heterostructures of MoS2
and WS2○Hisaki Sawahata1, Mina Maruyama1, Susumu Okada 1
1

Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan

Two-dimensional materials have been attracting much attention in the field of nanosciences
and nanotechnologies because of their geometries and electronic properties. They can easily
form the three-dimensional van der Waals heterostructures by stacking each other, which
possess the unusual electronic and optical properties, depending on the constituent
two-dimensional materials and their stacking arrangements. Besides the van der Waals
heterostructures, two-dimensional materials could be constituent units for in-plane
heterostructures in which the constituent materials form the one-dimensional border, when thematerials have similar lattice parameters each other. Indeed, graphene and h-BN form such
heterostructure with zigzag borders consisting of BC bonds. Furthermore, appropriate
combinations of transition metal dichalcogenides (TMDCs), such as MoS2/MoSe2 andMoS2/WS2, lead to in-plane heterostrcutures. For the heterostructure consisting of grapheneand h-BN, our theoretical calculation demonstrated that the energetics and electronic structureof the border strongly depend on its shape [1]. Thus, we can also expect that the physicalproperties of the heterostructures consisting of TMDCs strongly depend on their bordershapes, as the case of the graphene/ h-BN. Therefore, in this work, we aim to elucidate theenergetics and electronic structures of heteronanoribbons consisting of MoS2 and WS2 strips
in terms of their border shapes, using the density functional theory with the generalized
gradient approximation and the effective screening medium method.
Figure 1 shows the optimized structure of nanoribbons consisting of MoS2 and WS2 witharmchair, chiral, and zigzag borders. Among these borders, the armchair border is the moststable, while the zigzag border is the least stable, with the border energies of -1.38, -1.60 and-1.73 eV/Å for zigzag, armchair and chiral borders, respectively. We also found that theelectronic structure also depends on the border shape.
[1] H. Sawahata et al.
Appl. Phys. Express 11,
065201 (2018).
Corresponding Author:
H. Sawahata
Tel: +81-29-8535921
E-mail:hsawahata@comas.frsc.ts
ukuba.ac.jp

Fig.1 Optimized structures of the ribbons consisting of MoS2 and WS2 witharmchair, chiral, and zigzag borders. Black, gray and white circles donate W,
Mo and S atom, respectively.

- 30 -

2-7

Chirality dependence of plasmon peaks in carbon nanotubes
Riichiro Saito○, Daria Sacco, Ahmad R. T. Nugraha, M. Shoufie Ukhtary
Department of Physics, Tohoku University, Sendai
When Kazaoui doped single carbon nanotube, he observed that interband opticalabsorption which is denoted by Eii is suppressed from the lower energy side, that is E11,
E22, E33 by occupying (unoppcupying) electrons (holes) in the conduction (valence)
energy band by n (p) doping [1]. When the Fermi energy is located in the conduction (orvalence) band of a semiconducting or a metallic nanotube, we expect intraband, opticalconductivity which makes a strong optical absorption that is known as plasmon
absorption peak. Sasaki has pointed out that the plasmon absorption occurs by the linear
polarization of the light perpendicular to the nanotube axis [2]. Yanagi has observed theplasmon peak using the aligned nanotube sample by changing the polarization of light.
[3] Senga has observed the plasmon peak of an isolated nanotube in electron energy loss
spectroscopy. [4] Thus it is important to investigate the chirality dependence the plasmon
frequency and the intensity of the plasmon peaks as a function of (n,m) of nanotube andthe Fermi energy.
In this presentation, we will show “Plasmon Kataura Plot as a function of the Fermi
energy” theoretically for characterizing nanotubes by plasmon peaks. [5] In particular, we
discuss (1) the most contributed cutting lines (one-dimensional Brillouin zone) for
observing the each plasmon peak and (2) scaling the plasmon peak as a function of thediameter.
References[1] S. Kazaui et al., Appl. Phys. Lett. 78.22, 3433 (2001).
[2] K. Sasaki and Y. Tokura, Phys. Rev. Appl. 9, 034018 (2018).
[3] K. Yanagi et al., Nature Commn., 9,. 1121 (2018)[4] R. Senga et al., Nano Letters 16, 3661 (2016).
[5] D. Sacco et al., unpublished.
Corresponding Author: Riichiro Saito
e-mail : rsaito@flex.phys.tohoku.ac.jp
Web: http://flex.phys.tohoku.ac.jp- 31 -

2-8
Decay dynamics and diffusion lengths of bright and dark excitonsin air-suspended carbon nanotubes○Akihiro Ishii1,2, Hidenori Machiya 1,3, Yuichiro K. Kato 1,2
1

Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama 351-0198, Japan
2
Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama
351-0198, Japan3
Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
As excitonic states play an important role in
optical phenomena [1] in carbon nanotubes, theirfundamental properties such as emission lifetime anddiffusion length have been studied by various opticaltechniques [2]. In the lowest lying states of excitons,
however, there exist other “dark” states, whose
properties are not well understood yet because they
are not optically accessible. Here we separately
investigate exciton dynamics of parity-odd brightstate and parity-even dark state by performing Fig.1 Emission decay curves obtained
time-resolved photoluminescence measurements on from (9,8) nanotubes with various lengths
defect-free as-grown carbon nanotubes. The emission ranging from 0.5 μm (bottom) to 4.2 μm
decay curves exhibit bi-exponential behavior, where (top). The broken line indicates the
response function. (inset)
the fast and slow decay components arise from the instrument
Schematic of the three-level model for
dynamics of bright and dark excitons, respectively. exciton decay dynamics.
We analyze such exciton dynamics using athree-level model including the effects of end quenching by measuring chirality-identified
nanotubes with different suspended lengths [Fig. 1]. We find that bright excitons have
lifetimes of ~70 ps and diffusion lengths of several hundred nanometers, consistent with the
known values. In comparison, dark excitons have much longer lifetimes in the order ofnanoseconds and diffusion lengths longer than 3 μm. We also observe a tendency that
nanotubes with larger diameter have higher bright-dark transition rate, which is likely due tothe diameter dependence of the splitting energy between bright and dark states.
Work supported by JSPS (KAKENHI JP16K13613 and JP17H07359), MEXT
(Nanotechnology Platform), and RIKEN (Incentive Research Project). H.M. acknowledges
support by RIKEN Junior Research Associate Program. We acknowledge the Advanced
Manufacturing Support Team at RIKEN for technical assistance.
[1] A. Ishii, T. Uda, Y. K. Kato, Phys. Rev. Appl. 8, 054039 (2017).
[2] A. Ishii, M. Yoshida, Y. K. Kato, Phys. Rev. B 91, 125427 (2015).
Corresponding Author: Yuichiro K. Kato
Tel: +81-48-462-1111 (ext. 3432)
E-mail: yuichiro.kato@riken.jp- 32 -

2-9
Surface-Enhanced Raman Spectroscopy of Individual Single-Walled
Carbon Nanotubes
Juan Yang*, Chenmaya Xia, Daqi Zhang, Henan Li, Sheng Li,
Haoming Liu, Ruoming Li, Yan Li*
College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
The resonant Raman spectroscopy can only detect on-resonance single-walled carbon
nanotubes (SWNTs). In principle, surface-enhanced Raman scattering (SERS) spectroscopy
can enhance the weak signal and expand the resonance window [1]. However, detection of
off-resonance SWNTs by SERS remains challenging due to the difficulties in locating the
SWNTs exactly at the hot spots with enormous SERS enhancements. Here, we report a facile
design of a ultrasonic spray pyrolysis method to in-situ form a unique nanocomposite
structure with closely spaced polyhedral gold nanocrystals (AuNCs) deposited on suspended
SWNTs. The fact that the edges of the AuNCs attach to the SWNTs ensures the location of
SWNTs at the hot spots. Consequently, we achieve enormous enhancements of the Raman
signal of the SWNTs that are two orders of magnitude higher than any previous values. The
enormous enhancements enable the detection of many off-resonance SWNTs and allow thedetection of several Raman bands of the SWNTs that have not been reported previously [2].
Moreover, We show that single molecules (SM) encapsulated inside the SWNT and locatedat the SERS hot spot can be unambiguously detected. We then monitor those SERS
fingerprints as the single molecules undergo a chemical reaction inside the SWNTs. The
encapsulation of the single molecules inside the SWNT reduces the vast complexities causedby the SM signal fluctuations (including temporal blinking, intensity variation, and spectral
wandering) that exist otherwise [3], and may help to achieve a fundamental understanding of
the SM behavior and SM reactivity. This approach not only offers a robust and reliable
method for SM detection but also opens new possibilities towards SM science by providing
an excellent system facilitating the studies of chemistry and physics at the SM level [4].

Hot-spotc

Intensity (a.u.)b

200 nm

AuNC

400

d

Intensity (a.u.)

SWNT

0.9 nme

690 μW 0.5 cps

8001200 1600-1

Raman shift (cm )

1 μW

100

EF=33000
400

1.4 nm

50 cps800

633 nmCountsCountsa Single Molecule SERS

1200 1600-1

Raman shift (cm )

0
0

1

2
3
log EF4

Fig.1 Schematics (a) and SEM image (b) of the AuNCs-SWNT nanocomposite with a single rhodamine 800 molecule
encapsulated inside the SWNT and located at the hot spot. The Raman enhancements (c-e) of the AuNCs-SWNT.
[1] H. Chu, J. Wang, L. Ding, et al. J. Am. Chem. Soc. 131, 14310 (2009).
[2] J. Yang, D. Zhang, C. Xia, et al. in preparation.
[2] A. B. Zrimsek, N. Chiang, M. Mattei, et al. Chem. Rev. 117, 7583 (2017).
[3] J. Yang, C. Xia, H. Li, et al.submitted.
Corresponding Author: J. Yang
Tel: +86-10-62755357
E-mail: yang_juan@pku.edu.cn- 33 -

2-10
Design and Synthesis of a New Ir-catalyst Deposited on Ti
Nanotubes for Efficient Water Splitting
Junfang Cheng, Jun Yang, Sho Kitano, Miho Yamauchi, ○Naotoshi Nakashima
International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, 744
Moto-oka, Nishi-ku Fukuoka, 819-0395, Japan

Development of reliable renewable energy technologies is always the prevailing strategy tobalance the mismatch between energy supply and demand[1]. Water electrolysis is apotentially effective method to address the issues of environmental emissions and energy
sustainability, while it is severely limited by the sluggish oxygen evolution reaction (OER).
IrOx-based materials are regarded as the most promising candidates in acidic media, but still
limited due to the high cost of the Ir metal. To solve this problem, it is crucial to design andfabricate a novel catalyst having a very high OER performance with a reduced Ir amount.
Here, we report a novel Iridium (Ir) catalyst, deposited on Ti nanotubes, with a highconcentration of active OH species on its surface. We have discovered that the obtained
catalyst shows an excellent OER activity (1.43 V vs. RHE at 10 mA cm-2), which is, to thebest of our knowledge, the best performance in acidic media. Moreover, no apparent potential
increase was observed even after a chronopotentiometry test at 10 mA cm-2 for 100 h andcyclic voltammetry for 700 cycles.
[1] N. Nakashima (Editor), Nanocarbons for Energy Conversion-Supramolecular Approach,Springer. pp. 1-564 (2018).
Corresponding Author: N. Nakashima
Tel: +81-92-802-6745, Fax: +81-92-802-6745
E-mail: nakashima.naotoshi.614@m.kyushu-u.ac.jp- 34 -

2-11
Self-Assembly of Nanodiamonds from their Solutions○Toshihiko Tanaka1,3, Yasuhiro F. Miura2, Tetsuya Aoyama3,
Kazunori Miyamoto4, Masanobu Uchiyama3,4, Eiji Osawa5
1

Department of Chemistry and Biochemistry, National Institute of Technology,
Fukushima College, 30 Aza-nagao, Tairakamiarakawa, Iwaki, Fukushima, 970-8034, Japan
2
Hamamatsu University School of Medicine, 1-20-1 Handayama,
Higashi-ku, Hamamatsu city, Shizuoka, 431-3192, Japan
3
Elements Chemistry Laboratory, RIKEN Cluster for Pioneering Research,
2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
4
Graduate School of Pharmaceutical Sciences, the University of Tokyo,
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
5
Nano Carbon Research Institute Ltd., Asama Research Extension Center,
Shinshu University, 3-15-1 Tokida, Ueda, Nagano, 386-8567 JapanWe demonstrate herein further results on the self-assembly of detonation nanodiamonds(DND) from their aqueous colloidal solutions. We already reported two kinds of anisotropic
precipitates of DND: one is a fine whisker1-3 and the other is a nanosheet3,4. They are
significant with respect to their research and applications because it has suggested theexistence of elementary particles of DND, which is a possible novel nanocarbon species
containing sp3 carbons.
The nanosheets were crystallized from a diluted DND solution to the adsorbed DND
particles on a Langmuir monolayer of arachidic acid (Ar). We postulate that the monolayer
induces the crystallization under the PTFE bars of a Langmuir trough and that the precipitatesof ultrathin rectangular nanosheets (~26 nm thick) are squeezed out from the undersurface ofthe bars to the water surface.(Fig.1) Such a process should result in a low content of Ar in thenanosheets. In fact Raman spectra showed that the sheets contain a negligible amount of Ar
and that the adsorbed monolayer contains a comparable amount of Ar to that of DND in turn.
Recent procedures provided a small ring (φ~7 mm) of a curved whisker on the wall of atest tube. If a DND solution of over 4 wt.% dries out in the tube, whiskers can be removed
easily after drying, thus becoming a ring (Fig,2). Although the rings were generally brittle,
they were slightly elastic, being able to deform a little without breaking. We will discuss theorigin of the self-assembly in these two cases.

	
  	
 

	
  	
  	
 

Fig.1 The model of the crystallization under the bar: a) Langmuir monolayer;b) crystallization; c) nanosheet; d) elementary particles of DND; e) PTFE bar.

Fig.2 A ring of acurved DND whisker.

[1] E. Osawa; Diamond & Related Materials. 16, 2018–2022(2007). [2] H. Huang, L. Dai, D. H. Wang, L-S.
Tanc, E. Osawa; J. Mater. Chem., 18, 1347–1352 (2008,). [3] T.Tanaka, Y.F. Miura, T. Aoyama, M. Takahashi,
T. Sato,E. Osawa; Abstract of the 54th FNTG Symposium, 28(2018). [4] T.Tanaka, Y.F. Miura, T. Sato, E.
Osawa; Abstract of the 53th FNTG Symposium, 66(2017)./Tel:+81-268-75-8381/E-mail: osawa@nano-carbon.jp- 35 -

2-12       
       
26+.$+BB/,3 $+4>B++B+<23 >63(8<2378 +84386+=<> ;+.>+=/#-288580>6+7+7.7?3;876/7=+5#=>.3/<B8=8%73?/;<3=B
7<=3=>=/807137//;371&+=/;7?3;876/7=+7.3?357137//;371#237<2>%73?/;<3=B
/9+;=6/7=80 ,<=/=;3-<+7.B7/-8581B#231+%73?/;<3=B80/.3-+5#-3/7-/+78.3+687.<<2+?//A-/55/7=6/-2+73-+5+7.89=3-+59;89/;=3/<5+;1/<>;0+-/+;/+<+7.
=>7+,5/<>;0+-/<=;>-=>;/<$2/B@/;/08>7.=8,/;/5+=3?/5B5/<<=8A3-+68717+789+;=3-5/<
6+4371 =2/6 @/55 <>3=/. =8 ,386/.3-+5 +9953-+=387< ) * 7 8;./; =8 /72+7-/ =2/ 37=;37<3-
9;89/;=3/<+7.+99/7.7/@9;89/;=3/<2B,;3.3C+=38780<@3=28=2/;7+789+;=3-5/<<//6<9;863<371 =/-273:>/ 8@/?/; 68<= 80 =2/ ;/5+=/. @8;4 =8@+;.< <>-2 0>7.+6/7=+5
2B,;3.3C+=387 3< 5363=/. =8 =89.8@7 53=281;+92B @23-2 3< =B93-+55B + ?/;B -86953-+=/. +7.=36/-87<>63719;8-/<<+7.3<.3003->5==8,/<-+5/.>9/;/@/./?/589+0+-35/,8==86>9<B7=2/=3- +99;8+-2 =8 9;/9+;/ <>9/;9+;+6+17/=3- 3;87 8A3./ 7+789+;=3-5/ #! 
7+782B,;3. ><371<85?8=2/;6+56/=28. +7.37?/<=31+=/ 3=<6+17/=3-;/<87+7-/36+1371"-87=;+<=+,353=B+7.2/+=1/7/;+=3879;89/;=B37+5=/;7+=3716+17/=3-03/5.
$8 9;/9+;/ #!  9+;=3-5/< 03;<=  @3=2  76 +7.  76 <3C/<   +7. ;/<9/-=3?/5B@/;/-8?+5/7=5B0>7-=387+53C/.@3=22B9/;,;+7-2/.985B15B-/;85!
+--8;.371=8=2/9;8-/.>;/@/;/98;=/.9;/?38><5B) *$2/7+99;89;3+=/+68>7=80!
  61 80 < 63A/. @3=2 3;87 +-/=B5+-/=87/ /+-+-    8;   61 37 =;3/=2B5/7/
15B-85 6=89;/9+;/#!  8;#!   ;/<9/-=3?/5B37+55B
=2/63A=>;/@+<2/+=/.>9=8 D37+6+>=8-5+?/08; 637+7.4/9=+==2/=/69/;+=>;/
08; 637
31>;/  <28@< + =;+7<63<<387 /5/-=;87 63-;8<-89B $ 36+1/ 80  #!  37
@23-2#! +;/2B,;3.3C/.87=2/<>;0+-/80  7</= 37 31>;/  <28@< + 2312
;/<85>=387 $ 36+1/ 80 #!  37 @23-2
-;B<=+5 5+==3-/ 80 #!  @+< 8,</;?/.
>;=2/;68;/ =2/ ,8=2 ';+B .300;+-=387
'" 9/+4< 80 #!  +7.  @/;/
-8703;6/. 37 <#!  7+782B,;3.
B7+63- 5312= <-+==/;371 6/+<>;/6/7=< 37@+=/; 37.3-+=/. =2+= 2B.;8.B7+63- <3C/ 80 !+7. !37-;/+</.0;86+7.  76 =8
 +7.  76 08;  #!     +7.  #!    ;/<9/-=3?/5B < 08; =2/ 92B<3-+5 9;89/;=3/<=2/3;"-87=;+<=+,353=B3<08>7.=8369;8?/
0;86 6 < 08;9>;/#! =8 6
< 08; #!   += ;/5+A3?3=B #!   ;+3</.=/69/;+=>;/80
+:>/8>< .3<9/;<387 =@3-/ 0+<=/; -869+;/. =8
9>;/#!  37+5=/;7+=3716+17/=3-03/5.&/
,/53/?/ =2+= 8>; ,>==87>9 <B7=2/=3- <=;+=/1B
-+7 ,/ +9953/. =8 2B,;3.3C/ ?+;38>< 437.< 80
7+789+;=3-5/<87=2/<>;0+-/) *28B$/=+5+=!28=873-<    ) *86+=<>/=+5.?>7-=+=   
+;1/<-+5/$36+1/80 #! 37</=31>;/<28@<2312;/<85>=387
36+1/80#! 8;;/<987.371>=28;$+BB/,3$/5+A    6+35+=+B/,3  16+35-86

- 36 -

3-1
Growth mechanism of multi-millimeter-tall single-wall carbon nanotube
forests using Fe/Gd/Al catalysts○Hisashi Sugime1*, Rei Nakagawa2, Toshihiro Sato2, Cinzia Cepek3, Suguru Noda2
1

Waseda Institute for Advanced Study, Waseda University
2
Department of Applied Chemistry, Waseda University
3
Istituto Officina dei Materiali-CNR, Laboratorio TASC

Growth of vertically-aligned single-wall carbon nanotube (VA-SWCNT) forests by thecatalytic chemical vapor deposition (CVD) is an attractive method for making applications.
However, the growth termination of the CNT forests is an obstacle, and the deactivation of thecatalyst nanoparticles due to the structure change of the catalyst nanoparticles is thought to be
one reason for the termination. In general, maintaining smaller catalyst nanoparticles which arenecessary for the SWCNT growth is more difficult because the smaller nanoparticles are lessstable. As for the growth temperature, higher temperature is preferred for the high growth rate,
but the structure change of the catalyst nanoparticles by migration, sintering, or Ostwald
ripening is accelerated resulting in the shorter growth lifetime. To realize the longer growth
lifetime, engineering catalysts is crucially important. So far, Fe-Gd catalyst on Al2O3 layer was
reported to realize the growth lifetime of 13h and 22-mm-tall multi-walled CNT (MWCNT)
forest at the growth temperature of 780 °C [1]. However, the growth rate is relatively low as~0.5 µm s-1, and the possibility of using Gd for SWCNT growth was not discussed in detail.
In this work, we applied the Fe/Gd/Al catalyst to
the growth of SWCNT forests, and systematically studied
the mechanism behind the enhanced growth (Fig. 1a). By
optimizing the catalyst condition, we achieved a highinitial growth rate of ~2 μm s-1 and long catalyst lifetimeof ~50 min at 800 °C. Correspondingly, the areal masscontinued increasing up to ~8 mg cm-2 in 60 min (Fig. 1b).
It was found that Gd layer with the thickness of less than
1 nm is effective when it is deposited between Fe and Al
layers. The Raman spectra showed the radial breathingmode (RBM) peaks from the top to the bottom of the CNT
forests, which suggests the continuous growth of
SWCNTs.
Fig. 1 (a) SWCNT forests grown using
Fe/Al or Fe/Gd/Al catalysts. (b) Arealmass of the SWCNT forests with two
Corresponding Author: H. Sugime, E-mail: sugime@aoni.waseda.jp different catalysts.
[1] W. Cho et al., Carbon 72, 264 (2014).

- 37 -

3-2
Single-walled carbon nanotube growth onto graphene crystals○ Kamal P Sharma1,2, Takuya Okada1, Aliza K Sharma1, Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
Nanomaterials Research Center, Meijo University, Nagoya 468-8502, Japan

2

Graphene and single-walled carbon nanotubes (SWCNT), sp2 hybridized honeycomb
structures of carbon, are realized as the promising materials for the wide ranges of applications
due to their high carrier mobilities, high electrical and thermal conductivities, and large surface
areas [1, 2]. A high quality 3D hybrid structures of graphene and SWCNT is highly desirable tofurther enhance their properties so as to use in various applications [3,4]. Here we attempt toaddress this issue by growing small-diameter SWCNTs onto graphene crystals.
Graphene crystals were synthesized on Cu by chemical
vapor deposition (CVD) technique and transferred onto
SiO2/Si as reported elsewhere [5]. Then, Ir nanoparticles
were deposited onto them, which were utilized as growth
substrates. SWCNT growth was carried out at an optimized
condition using ethanol gas as carbon source in ultra-highvacuum CVD (UHV-CVD) system [6]. Optical
microscope (OM), Raman spectrometer, FESEM, and XPS
were employed for the characterization.
Dark contrast circular regions in Fig. 1(a)corresponding to graphene crystals were confirmed prior
to SWCNT growth. After SWCNT growth, radial
breathing mode (RBM) peaks were observed in typicalRaman spectra taken from both graphene and SiO2/Si area
(Fig. 1(b)). In reference to Kataura plot, SWCNTs withdiameters of 0.8 to 1.2 nm were successfully grown onto
graphene crystals.
This work was supported in part by Private University
Research Branding Project from the Ministry of Education,
Culture, Sports, Science and Technology (MEXT), Japan.
[1] C. Wang et al., Chem. Soc. Rev. 42, 2592 (2013)[2] A. C. Ferrari et al., Nanoscale 7, 4598 (2015).
[3] D. H. Lee et al., Adv. Mater. 22, 1447 (2010).

Fig. 1. (a) OM images of graphene
crystals after SWCNT growth.
Circular structures with dark contracts
represent graphene crystals. (b) Raman
spectra highlighted in different colors
represent as listed in the inset.

[4] L. Xu et al., J. Mater. Chem. 22, 1435 (2011).

[5] K. P. Sharma et al., J. Mater Sci. 51, 7220 (2016).
[6] T. Maruyama et al., Mater. Express, 1, 267 (2011).

Corresponding Author: Takahiro Maruyama
E-mail: takamaru@meijo-u.ac.jp- 38 -

3-3
Enhanced gas-phase production of single-wall carbon nanotubes byoverheating of catalyst source
Katsuya Namiki1, Hisashi Sugime2, Toshio Osawa1, ○Suguru Noda1,3,*
Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan
Waseda Institute for Advanced Study, Waseda University, Tokyo 169-8050, Japan
3
Research Institute for Science and Engineering, Waseda University, Tokyo 169-8555, Japan
1

2

Floating catalyst chemical vapor deposition (FCCVD) has enabled production of highquality single-wall carbon nanotubes (SWCNTs) [1–3]. It has realized mass production ofvapor grown carbon fibers (VGCFs) at hundreds ton annually, however mass production of
SWCNTs is still underway. A SWCNT (d~1–2 nm) has a mass 1/10000 of a VGCF (~150 nm)
of the same length. Increasing the catalyst density is the key for mass production, however thefloating catalyst quickly aggregates in the gas-phase. We have developed the flame-assisted
CVD method, in which catalyst source vapors are decomposed in <1 ms at >2000 C using apremixed flame, and then cooled to ~1000 C in ~1 ms by gas-mixing to nucleate Fe particles
and grow SWCNTs [4]. This method yields SWCNTs with d = 1 nm, but the processoptimization is complicated due to the large content of H2O in the flaming gas.
We here report the FCCVD method with overheating of catalyst source. We used catalyst
preheater instead of the premixed flame. Compared with the normal FCCVD (w/o preheating),
both quality and quantity improved with preheating, and even more with overheating (Fig. 1).

Fig. 1. Production of SWCNTs by FCCVD with preheating of catalyst source. (a) Apparatus.
(b) Raman spectra with product properties. (c) Digital image, SEM and TEM of the SWCNTs
produced by overheating of the catalyst source.
[1] H.M. Cheng, et al., Appl. Phys. Lett. 72, 3282 (1998).
[2] A.G. Nasibulin, et al., Chem. Phys. Lett. 313, 91 (2005).
[3] T. Saito, et al., J. Phys. Chem. B 110, 5849 (2006).
[4] S. Okada, et al., Carbon 138, 1 (2018).
*Corresponding Author: S. Noda Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 39 -

3-4
All solution-processed heterogeneously integrated junction diode○Kuniharu Takei1,2, Daisuke Yamamoto1, Mao Shiomi1, Takayuki Arie1, Seiji Akita1
1

Dep. of Physics and Electronics, Osaka Prefecture University, Osaka 599-8531, Japan
2
JST PRESTO, Saitama 332-0012, Japan

Macroscale electronics enable to monitor a variety of
information especially for future human interactive
application and “Internet of Things” (IoT) concepts. To build
ideal platform for these concepts, low-cost, multi-functional
devices are required to integrate on versatile macroscale
substrates. One of the possible methods to cover all
requirements is a solution-based printing technique to form
all electrical components. In this study, we report one of theapproaches to fabricate a diode using InZnO (IZO) thin film
as n-type semiconductor and carbon nanotube (CNT) network
film as p-type semiconductor using only solution process [1].
First, fabrication process is briefly explained. IZO
precursor (Nissan Chemical) was spin-coated on SiO2/Si or
polyimide surfaces, followed by annealing at 300 °C. After Fig. 1 Photos of (a) CNT-IZO
junction diode and (b) flexible
patterning of the IZO film, semiconductor-enriched CNT diode. (c) Rectifying diodesolution was drop-casted over the pre-determined chemically characteristics as a function oftreated surface to form IZO-CNT junction and rinsed by DI temperature.
water. Ag electrodes for the contacts were painted on IZO and
CNT films. Finally, annealing at 200 °C in air and 150 °C in N2 gas ambient was conducted to
improve the electrical properties. Fig. 1a-b shows the device photos. p-type CNT (n-type IZO)
transistors have mobility of 3.9±2.3 cm2/Vs (1.87±0.3 cm2/Vs), threshold voltage of 2.7±9.8
V (11.7±4.9 V), and log (ION/IOFF) of 3.73±0.3 (5.71±0.3). It should be noted that thedimensions of the transistors (width W and length L) shown in Fig. 1a were used to extract themobility, resulting in that the value reported is underestimate because Ag electrode width ismuch smaller than W. Uniformity for especially CNT film needs to be improved to optimize
the surface and deposition conditions in the future.
After confirming each semiconductor layer, rectifying electrical characteristics were
measured. To analyze the band height between CNT and IZO film, temperature dependence
study was also conducted as shown in Fig. 1c. Importantly, using CNT/IZO junction,
rectifying diode characteristics is successfully realized by using only solution-based processes
on both rigid and flexible substrates. By analyzing off-current between -10 and -20 V shownin Fig. 1c using thermionic emission theory, barrier height of the junction was extracted to be~150 meV. Based on the band gap and work function of these films, the band alignment is
type II junction, which means that the rectifying behavior is mostly based on Schottky-like
contacts between IZO and CNT. Although improvements of the device performance are
required for the practical application, this all solution-based heterogeneously integrated diodeis an important step to move forward to realizing the macro-scale low-cost electronics.
Acknowledgements: This work was supported by KAKENHI JP17H04926, JST PRESTO JPMJPR17J5, andNissan Chemical Corporation.
Reference: [1] D. Yamamoto et al. ACS Appl. Mater. Interfaces 11, 1021 (2019).
Corresponding Author: K. Takei, Tel: +81-72-254-9497, E-mail: takei@pe.osakafu-u.ac.jp- 40 -

3-5

Low-voltage operable complementary carbon nanotube thin-film
transistors with threshold tuning by controlled doping on plastic substrate○Fu-Wen Tan1, Jun Hirotani1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Material and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

2

Carbon nanotube thin-film transistors (CNT TFTs) exhibit excellent electrical andmechanical properties, coupled with complementary metal-oxide semiconductor(CMOS)-based circuits, would enable high-performance and low-power flexible electronics.
Although complementary CNT TFTs have been achieved by featuring n-type TFTs by doping,its counterpart p-type devices are usually left as-fabricated without addressing issues such as
switching voltage threshold and its variability, which may lead to unreliable CMOS circuit
operation [1-2]. In this work, we demonstrate more than 100 complementary CNT CMOS
inverters with low operation voltage of 0.5 V by intentional doping of both p- and n-type
TFTs to tune the switching threshold.
Bottom-gated complementary TFTs connected in inverter configuration were fabricated ona flexible poly(ethylene naphthalate) (PEN) substrate as illustrated in Fig. 1. Semiconductor-enriched CNTs were utilized as the channel material. We confirmed that all 129 devices
showed p-type behavior with on/off ratio ~104 and uniform characteristic prior to doping.
Then, potassium hydroxide/benzo-18-crown-6-ether (KOH/CE) was spin-coated only on
selective devices to achieve n-type doping. An Al2O3 passivation layer was formed by atomic
layer deposition on the n-type devices. Next, a similar process was repeated by spin coating
silver-bis(trifluoromethane)imide (AgTFSI) on the p-type devices intended for thresholdtuning. Then, a polymethyl methacrylate (PMMA) and Al2O3 passivation layer was formed on
top of the p-type devices.
Figure 2 shows the transfer characteristics of 126 devices after (a) KOH/CE and (b)AgTFSI doping with a yield 95.4 %. The p- and n-doped devices were successfully
characterized without significant degradation of on-current and mobility at the end of thefabrication process. We confirmed the operation of CMOS inverters with supply voltage of
0.5 V, as shown in Fig. 2(c) with a small hysteresis width of 0.02 V on average.

10-4

10-5

10-5

10-6

10-6

10-7
10-8
10

-9

10-10
10-11
-2.0

Fig.1 Schematic structure of a complementary CNT
TFT device in inverter configuration.
0.5

0.4

Vout (V)10-4

ID (A/mm)-ID (A/mm)[1] Y. Zhao et al., ACS Nano 10, 2193 (2016)[2] J. Tang et al., Nat. Nanotechnol. 1, 191 (2018).
Corresponding Author: Y. Ohno
Phone & Fax: +81-52-789-5387,
E-mail: yohno@nagoya-u.jp

10-7
10

-8

0.3

0.2

10-9

126 devices

-1.5

-1.0

-0.5

0.0

VGS (V)

0.5

1.0

1.5

2.0

10-11
-2.0

0.1

126 devices

10-10

VDS = -2.0 V

VDS = 2.0 V
-1.5

-1.0

-0.5

0.0

VGS (V)

0.5

1.0

1.5

2.0

0.0
0.0

126 devices
VDD = 0.5 V
0.1

0.2

0.3

0.4

0.5

Vin (V)

Fig. 2 ID-VGS characteristics at VDS = | 2.0 V | of 129 CNT TFTs with channel length Lch = 50 µm after (a)AgTFSI and (b) KOH/CE doping. (c) Output characteristics of 126 CNT CMOS inverters at VDD = 0.5 V.

- 41 -

3-6
What controls whether [M2@Cn]- (n=78, 80) is stably formed or not?
○Kazuhiro Kobayashi, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Recently, M2@Cn(M=Y[1], Gd[2]; n=78, 80) were isolated as an anion form by using
the method combining the ion-pair chromatography with the mixed solvent extraction.
Because they are unstable in a neutral form, they could not be extracted from the soot by theusual extraction method, so they have been known as so-called missing metallofullerenes.
Then, the possibility of production and isolation for such missing metallofullerenes was
suggested. Therefore, we have been trying to produce [M2@Cn] containing other rare earth
metals[3-7]. As a result, [M2@Cn] could be obtained for Nd, Dy, Er, and Tm, but could notfor Eu and Yb.
In this work, to explain the difference between the two types of metals that give
[M2@Cn] or not, we considered the ionization potentials of metals and the electrostatic
potential between metals and fullerene cage. As shown in Fig. 1, the border seems to bewhere the sum is about -32 eV but there are some exceptions. More details will be discussed
in the presentation.

Fig. 1 Sum of the ionization potentials and the electrostatic potential[1] N. Nakatori, et al. The 49th Fullerenes-Nanotubes-Graphene General Symposium 46 (2015).
[2] T. Mitani, et al. The 50th Fullerenes-Nanotubes-Graphene General Symposium 95 (2016).
[3] S. Nishimoto, et al. The 54th Fullerenes-Nanotubes-Graphene General Symposium 47 (2018).
[4] R. Takai, et al. The 55th Fullerenes-Nanotubes-Graphene General Symposium 127 (2018).
[5] K. Kobayashi, et al. The 54th Fullerenes-Nanotubes-Graphene General Symposium 48 (2018).
[6] K. Kobayashi, et al. The 52nd Fullerenes-Nanotubes-Graphene General Symposium 128 (2017).
[7] K. Kobayashi, et al. The 11th Annual meeting of Japan Society for Molecular Science 2P055 (2017).
Corresponding Author: Takeshi Kodama
Tel: +81-42-677-2530, Fax: +81-42-677-2525
E-mail: kodama-takeshi@tmu.ac.jp- 42 -

3-7
Fullerene-Cation-Mediated Synthesis of Cyclo[60]fullerenes with
5-Membered-Rings and their Application to Perovskite Solar Cells○Hao-Sheng Lin 1, Il Jeon 1, Shigeo Maruyama 1, Yutaka Matsuo 1
1

Department of Mechanical Engineering,The University of Tokyo, Tokyo 113-8656, Japan

Cyclo[60]fullerenes have attracted intensive attentions due to their excellent performancein photovoltaics, such as organic solar cells (OSCs) and perovskite solar cells (PSCs).
Accordingly, great endeavors has been devoted into the efficient synthesis of
cyclo[60]fullerenes, including phenyl-C61-butyric acid methyl ester (PC61BM), indene-C60
bisadduct (ICBA), and methylene indene fullerene (MIF). It is worth noting that decreasing
the π-system of C60 (60π) by derivatization can effectively increase the LUMO level ofderivatives, which benefits the VOC in OSCs as the Voc = LUMOacceptor – HOMOdonor. However,in terms of PSCs, fullerene derivatives with multi-addend gave a much poor performance thanpristine C60 as they are being as electron transporting layer. The molecular volume can beenlarged by multiple addends, which negatively influence the efficiency of the electrontransporting ability. Consequently, conventional molecular design in OSCs is far-fetched to beconceived in PSCs.
Among cyclo[60]fullerenes, especially derivatives with full carbon ring present muchexcellent performance such as three-membered ring (PCBM) and six-membered ring (ICBA,
MIF). Nevertheless, five-membered ring has not been efficiently produced, which hinders theinvestigation of their property and performance in photovoltaics. To the best of our knowledge,
although fullerenyl anion and radical mediated reaction elegantly pave the road for theefficient synthesis of cyclo[60]fullerenes, they confess feeble when faced with five-memberedring unit. Fullerene cation mediated reaction, a recently boosted methodology, showed its
superiors in fullerene synthetic chemistry especially for unique molecules.1 Here in, we
presented a fullerene-cation-mediated synthesis of cyclo[60]fullerenes and comprehensively
evaluated the performance of five-membered ring fullerenes in PSCs, which gave a
impressive high PCE up to 20.7%.

R1

n

R2

R

O

1

n

R2
O

intramolecular cyclization- Yield up to 93%- Versatile functional groups- PCE up to 20.7% by 5aOrgano[60]fullerenyl cation[1] H.-S. Lin, Y. Matsuo Chem. Comm. 54, 11244 (2018).
Corresponding Author: Y. Matsuo
Tel: +81-3-5841-0978
E-mail: matsuo@photon.t.u-tokyo.ac.jp- 43 -

3-8
Transformation kinetics from Li+@[5,6]-PCBM to Li+@[6,6]-PCBM:
Reaction rate enhancement by the encapsulated Li+○Yue Ma 1, Hiroshi Ueno 2,3, Hiroshi Okada 3,4 , Yutaka Matsuo 1,3,4
1

Hefei National Laboratory for Physical Sciences at Microscale, University of Science andTechnology of China, 96 Jin-zhai Road, Hefei, Anhui 230026, China
2
School of Chemistry, Northeast Normal University, Changchun, Jilin 130024, China
3
Center for Fundamental and Applied Research of Novel Nanocarbon Derivatives,
Center for Key Interdisciplinary Research, Tohoku University
4
Department of Mechanical Engineering, School of Engineering, The University of Tokyo,
Bunkyo-ku, Tokyo 113-8656, Japan

Apart from general endohedral metallofullerenes, Li+@C60 is regarded as cationic fullerene
consisting of encapsulated lithium ion (Li+) and neutral C60 cage. It is emphasized that theinternal Li+ is trapped by C60 cage, and thus Li+@C60 can be considered as “perfect” Li+-C60
complex. Previously we have reported greatly enhanced Diels-Alder reaction of Li+@C60 as afirst example of the catalytic effect of Lewis acid for heteroatomless substrate. However, noother detailed kinetics for the specific Li+-C60 complex have been studied so far. In this work,
we report the transformation kinetics from [5,6]-fulleroid to [6,6]-methanofullerene bycomparing the reaction rate of Li+@PCBM and its empty analogue.
The Li+@[5,6]-PCBM was prepared based on reported procedure. The kinetic parameters
including the rate constant, activation energy, activation enthalpy, activation entropy andactivation Gibbs free energy were estimated experimentally. Compared with the reaction of
empty one, Li+@[5,6]-PCBM converted 1000-fold faster at 400 K, corresponded to lowering
the activation energy by ca. 100 kJ mol–1 (Figure 1). We also performed the reaction for
empty PCBM with adding “external” lithium salt such as LiTFSI, however, almost noreaction acceleration was observed. The details will be shown on the presentation.

Figure 1. Arrhenius plots in the conversion reaction of (a) Li+@PCBM and (b) empty PCBM.
.
[1] Ueno, H. et al. J. Am. Chem. Soc. 2014, 136, 11162−11167[2] Matsuo, Y. et al. Org. Lett. 2012, 14, 3784-3787
Corresponding Author: Y. Matsuo
Tel: +81-3-5841-0978, E-mail: matsuo@photon.t.u-tokyo.ac.jp- 44 -

3-9
Vibrational Finger Prints in the Spectra of C60○Tomonari Wakabayashi1, Takamasa Momose2, Mario E. Fajardo3
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan
Department of Chemistry, University of British Columbia, Vancouver V6T 1Z1, Canada
3
Munitions Directorate, US Air Force Research Laboratory, Eglin AFB, FL 32542-5910,
USA
1

2

Infrared spectroscopy was one of the major tools upon the discovery of macroscopic
amount of synthesis for fullerene C60 [1]. Recently, infrared emission features were identified
for the discovery of C60 in young planetary nebula [2]. The relatively small number of
infrared-active vibrational modes enables one to identify such a large molecule of C60, i.e.
only four T1u modes are IR-active among the 46 vibrational modes in the total 174 vibrational
degrees of freedom. Turning our eyes to the presence of isotopologues, namely 13Cx12C60-x (x≧1), we realize that our terrestrial sample of C60 is a mixture of distinguishable molecules
containing natural isotopic abundance of 1.1% 13C. Indeed, Raman signal of the totallysymmetric Ag mode of C60 at 1470 cm-1 is reported to split into a few peaks under the dilutecondition in a solid CS2 matrix at 30 K [3]. Very recently, rovibrational quantum states of C60
were resolved in the gas-phase frequency-comb spectroscopy [4]. Here high-resolution IR
absorption spectra of matrix-isolated C60 is revisited to understand the symmetry breaking of
icosahedral 12C60 by substitutions of 12C nuclei by 13C isotopes.
High-resolution IR absorption spectra of C60 were reported previously by our researchgroup using solid para-H2 matrices at 2 K, where the spectral features in each of the fourIR-active vibrational mode spectra were attempted to be understood by molecular rotational
structures taking missing levels due to Boson-exchange symmetry restrictions into account [5].
In the present work, we reanalyzed these spectra by another idea of isotopologues present in
the C60 sample, which contains calculated abundance of 51% 12C60, 34% 13C12C59, 11%13
C212C58, and 2.5% 13C312C57 for the natural isotopic abundance. New spectroscopic data
were also obtained for the isotope-reduced and -enriched samples of C60. Molecular orbital
calculations for vibrational spectra of these isotopologues led to a better agreement to theexperimental data [6].
[1] W. Krätschmer et al. Chem. Phys. Lett. 170, 167 (1990).
[2] J. Cami et al. Science 329, 1180 (2010).
[3] S. Guha et al. Phys. Rev. Lett. 72, 3359 (1994).
[4] P. B. Changala et al. Science 363, 49 (2019).
[4] N. Sogoshi et al. J. Phys. Chem. A 104, 3733 (2000).
[5] T. Wakabayashi et al. in preparation.
Corresponding Author: T. Wakabayashi
Tel: +81-6-4307-3408, Fax: +81-6-6723-2721,
E-mail: wakaba@chem.kindai.ac.jp- 45 -

3-10
Density functional theory-based study of O2 adsorption on S- and P-doped
graphitic carbon nitride/graphene layer○Wilbert James C. Futalan1, Koichi Kusakabe 2, Allan Abraham B. Padama 3, Joey D. Ocon 1
1

Department of Chemical Engineering, University of the Philippines, Diliman, Quezon City,
1101, Philippines
2
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-chou,Toyonaka, Osaka, 560-8531, Japan
3
Institute of Mathematical Sciences and Physics, University of the Philippines, Los Banos,
Laguna, 4031, Philippines

Graphitic carbon nitride, whose activity is due to the electronegativity difference between the
carbon and nitrogen atoms, has gained popularity among metal-free catalysts. Experimentswith graphitic carbon nitride have shown that addition of a conductive carbon support to GCN
improves its activity towards oxygen reduction reaction (ORR)[1, 2]. Following previous
studies on doped GCN, substitution of nitrogen or carbon with heteroatoms such as sulfur andphosphorus can further enhance GCN’s ORR activity[3, 4]. In this work, we investigate
through a density functional theory-based calculation the effect of substitutionally doping
sulfur and phosphorus on the graphitic carbon nitride/graphene layer in terms of adsorptionenergies and charge transfer extent upon oxygen adsorption. The results of the calculations
suggest that sulfur doping provides higher adsorption energy compared to phosphorus doping.
In terms of doping location, the calculations reveal that doping along the edge sites gives themost energetically favorable structure for oxygen adsorption. Moreover, this work considers
the possible relationship between the oxygen-GCN/graphene separation distance and theoxygen bond length as an indicator of the interaction of molecular oxygen as it adsorbs onto
the GCN/graphene surface.
[1] S. Lyth et al. J. Phys. Chem. C 113, 47, 20148-20151 (2009).
[2] S. Yang et al. Angew. Chem. Int. Ed 50, 23, 5339-5343 (2011)[3] Y. Zheng et al. J. Am. Chem. Soc. 133 50, 20116-20119 (2011)[4] Q. Han et al. J. Mater. Horiz 4, 832-850 (2017)
Corresponding Author: J. Ocon
Tel: +63-981-8500 loc. 3213
E-mail: jdocon@up.edu.ph- 46 -

3-11
High yield fabrication of quantum device made of graphene nanoribbon
using Plateau-Rayleigh instability
1○Wakana Okita1, Hiroo Suzuki1, Toshiro Kaneko1, Toshiaki Kato1,2
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Graphene is one of the topical nanomaterials attracting attentions as next generationelectronic materials due to its superior electrical conductivity, mechanically flexible structureand high optical transparency. While graphene has 2-dimensional sheet structure and shows
metallic like behaviour, it has been discovered that graphene nanoribbon (GNR) has finite
bandgap, which can be obtained by making graphene into 1-dimensional structure. This
discovery made GNR conspicuous material in semiconductor device field around the world.
One of our significant achievements so far is that we succeeded in integrated synthesis ofsuspended GNR for the first time [1-3] by unique plasma CVD process [4] combining with acreative idea, using nanobar structure as a catalyst. Heading towards implementation ofpractical application of suspended GNR grown by our method, it is essential to comprehend its
detailed electrical property. For this purpose, we prepare a narrow (~20 nm) GNR and carriedout transport measurement at low temperature (~15 K). As a result, almost perfectly periodic
Coulomb diamonds property was observed (Fig.1 (a)), which can be caused by quantum
confinement effect. However, in previous research the probability of Coulomb diamonds
observation was exceptionally low, which makes it difficult to realize integrated quantum
devices with GNRs. Therefore, it is very valuable subject to tackle how to improve fabrication
yield for quantum device made of suspended GNR grown by plasma CVD.
In this research, it is aimed to increasefabrication yield for quantum device by
optimization of original nanobar structures.
In our GNR growth method, liquid Ni
dewetting is caused by Plateau-Rayleigh (PR) instability during CVD and GNR can beobtained after CVD (Fig.1 (b)). It has been
revealed that our GNRs have local finestructure by P-R instability which behaves asa quantum dot. Based on this fact, fabricationofyield for quantum device turned out to be Fig. 1: (a) Overview of 2D color map
2
conductance(G)normalized
by
e
/h
(G
0) against
increased up to 50 % by using nanobar withdrain-source bias (Vds) and gate bias (Vg) voltage.
similar length as wave length of P-R(b) Illustration of Ni nanobar during CVD andinstability. This research possesses very after CVD.
useful results to realize future integratedquantum devices with GNRs.
[1] T. Kato and R. Hatakeyama: Nature Nanotechnology 7 (2012) 651.
[2] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa and T. Kato: Nature Communications 7 (2016) 11797.
[3] H. Suzuki, N. Ogura, T. Kaneko, and T. Kato, Scientific Reports 8 (2018) 11819.
[4] T. Kato and R. Hatakeyama: ACS Nano 6 (2012) 8508.
Corresponding Author: W. Okita
Tel:+81-22-795-7046,
E-mail:wakana.okita.r5@dc.tohoku.ac.jp- 47 -

ポスター発表
Poster Preview

1 P – 1 ～ 1 P – 38
2 P – 1 ～ 2 P – 38
3 P – 1 ～ 3 P – 37

1P-1
Synthesis and characterization of fullerene-based molecular torsion balance
for investigating noncovalent fullerene–arene interaction○Haruna Narita1, Yutaka Maeda1, Michio Yamada 1
1

Department of Chemistry, Tokyo Gakugei University, Koganei, Tokyo 184-8501, Japan

Fullerenes are expected to be utilized for a variety of applications in the fields of materials
chemistry and medicinal chemistry [1]. Understanding noncovalent fullerene–arene
interactions is therefore a demanding task to understand fullerene-based molecular assembled
systems and molecular recognition events. Recent advances in supramolecular chemistry offullerenes have shown that structurally well-defined molecular receptors provide strong
noncovalent interactions with fullerenes to form stable complexes [2]. Nevertheless, little has
explored in the quantitative analysis of noncovalent fullerene–arene interactions, because ofits difficulty in observation of such weak interactions. In this context, Wilcox and co-workers
developed a model system, called a molecular torsion balance, to evaluate noncovalent
arene–arene interactions in the 1990s [3]. That success motivated us to apply the molecular
torsion balance system for investigation of non-covalent fullerene–arene interaction. In thisstudy, we designed, synthesized, and characterized the fullerene-based molecular torsion
balances to perform quantitative analysis for noncovalent fullerene–arene interaction for the
first time. As shown in Scheme 1, the proposed model system features, in its folded
conformation, an interaction between the fullerene surface and an arene moiety, while theinteraction is absent in its unfolded conformation. When the rotation around the biphenyl C–C
bond is slow on the 1H NMR timescale, the population of the two conformers can be
determined by integration of the methyl signals (the corresponding methyl group is denotedby ‘Me’ in Scheme 1) at different temperatures. In this presentation, we show the synthesis
and characterization of the molecular torsion balances possessing substituted arene moieties.
In addition, the thermodynamic parameters obtained from variable-temperature (VT)-1H
NMR measurements will be discussed.
O

Me

O

Me

O
R

O
EtO2C
N

EtO2C
N

K

EtO2C

Folded conformation

EtO2C

Unfolded conformation

R

Scheme 1. Two conformersof the fullerene-based torsion
balance.

[1] (a) Chemistry of Nanocarbons, T. Akasaka, F. Wudl, S. Nagase, Eds.; John Wiley & Sons: Chichester, 2010.
(b) Organic Nanomaterials, T. Torres, G. Bottari, Eds.; John Wiley & Sons: Hoboken, 2013.
[2] Supramolecular Chemistry of Fullerenes and Carbon Nanotubes, N. Martín, J.-F. Nierengarten, Eds.;
Wiley-VCH:Weinheim, 2012.
[3] (a) S. Paliwal et al. J. Am. Chem. Soc. 116, 4497 (1994). (b) E.-i. Kim et al. J. Am. Chem. Soc. 120, 11192(1998).
Corresponding Author: M. Yamada
Tel: +81-42-329-7493, Fax: +81-42-329-7493
E-mail: myamada@u-gakugei.ac.jp- 49 -

1P-2
Controlling Thermal Conductivity of Carbon Nanotubes by Side-Wall
Functionalization to Improve the Figure of Merit○Angana Borah 1 and Tsuyohiko Fujigaya 1, 2, 3, 4
1Kyushu University, Fukuoka 819-0395, Japan, 2WPI-I2CNER, Fukuoka 819-0395, Japan,
3CMS, Fukuoka 819-0395, Japan, 4 JST-PRESTO, Saitama 332-0012, Japan

Introduction:
SWNTs
have
gathered ample
attention as
thermoelectric (TE) materials due totheir extremely high electricalconductivity(σ),
Seebeck
coefficient (S), light weight,
Fig. 1 Scheme of the functionalization using 3,5-DTBBD
mechanical toughness and flexibility[1].
However,highthermalconductivity (κ), which is a property of SWNT, is undesirable as it cannot maintain atemperature gradient necessary to generate electricity using the TE principle [2]. Previously, it
was reported that introduction of defects on SWNT decreased thermal conductivity [3].
However, the effect of these defects on the figure of merit (ZT) is not known. Thus, in thisstudy, we functionalized SWNT sheets with different concentrations of
3,5-di-tert-butylbenzenediazonium tetrafluoroborate (3,5-DTBBD) (Fig. 1) to investigate thedependence of ZT.
Experiment: SWNTs (eDips 1.5 nm in diameter) were dispersed in an aqueous SDBS
solution and vacuum filtrated, oven dried and heat treated to obtain a free standing sheet. The
sheet was dipped in 3,5-DTBBD solution at different concentrations for functionalization.

30

0.00350.003

250.0025

20

0.002

15
10
0.001

ZT

[1] M. Ohnishi et al. Phys. Rev. B. 95, 155405(2017).
[2] F. Lian et al. Appl. Phys. Lett. 108, 103101(2016).
[3] J. Blackburn et al. Adv. Mater. 30, 11(2018).
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842,
E-mail:fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp

Thermal Conductivity / Wm K

-1 -1

Results and discussion: Fig. 2 summarizes the in plane κ (♦) and ZT (□) of the sheet
depending on the concentration of 3,5-DTBBD solution used for the functionalization. The κ
decreased from around 32 Wm-1K-1 to around 15 Wm-1K-1, that is, decreased by around 50%.
This is because with increasing concentration more defect sites are produced and decreases κ.
On the other hand, the ZT value was
0.005
40
almost constant. This was due to the
Thermal Conductivity
0.0045
Non-functionalized
decrease in S which cancelled the35
decrease in κ and increase in σ.
0.004

0.0015ZT
Non-functionalized

0.01

0.1

1

10

0.001

Concentration / mM

Fig. 2 Dependence of thermal conductivity and ZT on
concentration of 3,5-DTBBD- 50 -

1P-3
Soft Aerogels Supported by ~1 mass% Carbon Nanotubes
for Thermal Interface Materials○Satoru Kawakami1, Hisashi Sugime2, Junichiro Shiomi3, Suguru Noda1,4
1

Department of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan
2
Waseda Institute for Advanced Study, Waseda University, Tokyo 169-8050, Japan3
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
4
Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan

Thermal interface materials (TIMs) are used for enhancing heat transfer between solid
surfaces by creating thermal paths. Their important characteristics are high thermal
conductivity and softness for filling the air gaps. However, many conventional TIMs consistof thermal conductive fillers dispersed in polymer matrix, which has disadvantages of low
thermal conductivity and poor thermal stability.
Here we propose aerogel TIM replacing polymer matrix with air matrix. Air matrix isreleased upon pressing and conductive fillers can directly contact each other. Soft, sponge-likeself-supporting films can be fabricated using carbon nanotubes (CNTs), and this structure isable to support fillers 100 times larger in mass compared with their own mass [1]. Moreover,
the CNTs are thermally stable (500 °C in air) and do not disturb thermal conduction between
the fillers because of their high thermal conductivity.
We selected Ag and h-BN particles as thermal conductive fillers. The aerogel TIMs were
fabricated by hybridizing Ag or h-BN particles with CNTs by simple dispersion-filtration
process (Fig. 1a, b). The TIMs were self-supporting even when the filler content was >100
times as large as that of CNTs. Furthermore, insulating aerogel TIMs were fabricated byreplacing CNTs with boron nitride nanotubes (BNNTs) and hybridizing them with h-BN
particles (Fig. 1c). The thermal resistances were evaluated by the steady-state method bysetting the TIMs between two Cu rods under 0.8 MPa (Fig. 1d) and were 40 mm2 K/W for theelectrically conducting TIM (99.5 mass% Ag with 0.5 mass% CNT) and 165 mm2 K/W for
the insulating TIM (97 mass% BN with 3 mass% BNNT). Optimization of the structure is
now underway, and the latest results will be reported.
(a) 1. Dispersion 2. Vacuum Filtration 3. Vacuum Drying (d)Fillers
CNTs

Peel off from
Membrane filter

IPA: isopropyl alcohol

(b)

(c)
BN-BNNTAg-CNT

300

Thermal resistance (mm2 K/W)

>2 h
@ R.T.

1 µm

99 mass% BN-CNT
97 mass% BN-BNNT

200
150
100
50
0

1 µm

99.5 mass% Ag-CNT

250

0

100

200

Thickness (µm)

300

Figure 1: The aerogel TIMs. (a) Fabrication process. (b) Digital and SEM images of Ag-CNT. (c) Digital and
SEM images of h-BN-BNNT. (d) Thermal resistances of the TIMs.
[1] K. Hasegawa and S. Noda, J. Power Sources 321, 155 (2016).
Corresponding Author: S. Noda, Tel: +81-3-5286-2769, Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 51 -

1P-4
Preparation of SWNTs on porous glass (PG) sheet○Tokinaru Matsuoka1, Hiroshi Nagasawa2, Shinzo Suzuki1,
1

Department of Physics, Kyoto Sangyo University, Kyoto 603-8555, Japan
2
Kankyo Resilience Co. Ltd., Yokohama 240-8501, Japan

In 2005, Aoki et al., reported about the formation of SWNTs on porous glass (PG)
material by using ACCVD technique [1], where metal particles (e.g. Co particles) were
deposited on PG material before ethanol was introduced as carbon source for making SWNTs
on PG material. The advantage of using PG material is that, it is very easy to make any kindof shape (rod, sheet.., etc.) made of PG, which implies that the as-grown SWNT-PG complex
itself is expected to be used as an optical or other kind of device [2]. Since ACCVD technique
has been widely used, because that the ambient temperature suitable for the formation of
SWNTs is relatively lower (typically, less than 800°C), and the purity of SWNTs in as-grownmaterial is better than those obtained by other technique, e.g. arc-burning procedure.
In this presentation, this ACCVD technique was further applied to PG sheet as well as PG
particles, and the most appropriate experimental condition for the preparation of SNWTs on
PG sheet was examined. In addition to Co particles as catalyst, Fe/Co alloy particles were also
used for comparison. Based on the thermal gravimetric (TG) analysis combined with Raman
spectroscopy [3], heat treatment was found to be able to purify as-grown SWNTs on PG sheet.
Further experimental findings are presented and discussed [4].
References:[1] Y. Aoki et al., Chem. Lett., 34, 562(2005).
[2] K. Nagao et al., Proceeding of the 46th fullerenes-nanotubes-graphene general symposium, 3P-15(2014).
[3] T. Matsuoka, et al., Proceeding of the 54th fullerenes-nanotubes-graphene general symposium, 2P-12(2018).
[4] T. Matsuoka, A Master’s Thesis, Kyoto Sangyo University (2019).
Corresponding Author: Shinzo Suzuki
Tel: +81-75-705-1631, Fax: +81-75-705-1820,
E-mail: suzukish@cc.kyoto-su.ac.jp- 52 -

1P-5
Characterization of Atomically Precise MoS2 Nanoribbons Confined Inside
Boron Nitride Nanotubes○Motoki Aizaki,1 Yusuke Nakanishi, *1, 2 Zheng Liu,3 GogoiPranjal Kumar,3 Jinhua Hong,3Ryosuke Senga,3 Kazu Suenaga,3 and Hisanori Shinohara1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan.
Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan.
3
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan.
2

Materials with reduced dimensionality could show
exotic properties absent in their bulk counterparts. In
recent years, this has been significantly demonstrated intransition-metal dichalcogenides (TMDs). For instance,monolayer MoS2 exhibits a direct bandgap that changes
from indirect in bulk, allowing various applications in
optoelectronics. Furthermore, 1D MoS2 nanoribbons(MoS2NRs) are predicted to exhibit electronic andmagnetic properties distinct from 2D monolayers [1].
Quantum confinement and edge effects should alter theelectronic structures. However, exploring the potentialof MoS2NRs is hampered by their limited availability:
although they have been fabricated using chemical [2]and lithographic [3] methods as well as through carbon
nanotube-template reaction [4], their characterization
still remains a significant challenge.
Here we report bottom-up synthesis of atomically
precise MoS2NRs by using boron nitride nanotubes(BNNTs) as molds. A self-assembly process causes theselective formation of zigzag edges (Figure 1a). More
importantly, insulating BNNTs has a large bandgap of~6 eV, allowing for a spectroscopic studies of inner
MoS2NRs. We successfully examined the electronic
structures of MoS2NRs by means of electron energy
loss spectroscopy (Figure 1b). Our results will offer theopportunities to explore the potential of TMDNRs as
well as a new direction in the research of 1D materials.

DE

0R615%117

Fig. 1 (a) HAADF-STEM Z-contrast image and(b) Atomic-resolution EEL spectrum of anindividual MoS2NR encapsulated inside a BNNT.

[1] Y. Li et al., J. Am. Chem. Soc., 130, 16739 (2008); P. Cui et al., Nano Lett., 17, 1097 (2017). [2] Y. H. Hunget al., Appl. Mater., 8, 20993 (2016). [3] H. Liu et al., IEEE Electron Device Letters, 33, 1273
(2012). [4] Z. Wang et al., J. Am. Chem. Soc., 132, 13840 (2010); A. Botos et al., J. Am. Chem. Soc., 138, 8175
(2016)
Corresponding Author: Y. Nakanishi
Tel: +81-52-789-3660, Fax: +81-52-747-6442, E-mail: naka24ysk@tmu.ac.jp- 53 -

1P-6
Precise carrier density control of SWCNTs by chemical dopingwith binary molecules○Guowei Wang, Takeshi Tanaka, Atsushi Hirano, and Hiromichi Kataura∗
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Ibaraki 305-8565, Japan

Electric power can be generated by moving an electrolyte droplet on an ultra-thinsingle-wall carbon nanotube (SWCNT) films. To achieve high efficiency, the carrier densityof the SWCNT film should be controlled precisely. In this study, we plan to fulfill thispurpose by encapsulating organic dopant molecules [1] and controlling the number of theminside SWCNTs. To do this, we selected 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]
squaraine (DPSQ) as a hole dopant molecule and coronene as a dummy molecule. SWCNTs(EC1.5, Meijo Nano Carbon, unsorted) were refluxed in 1,4-dioxane for 3 h withpre-dissolved dopant and dummy molecules. We have prepared several SWCNTs withdifferent DPSQ molecule density (Fig. 1) by simply adjusting the concentration ratio of
DPSQ to coronene. Since the dummy molecules do not affect the electronic properties of
SWCNTs, this method should be a good method to control carrier density precisely. As thenext step, we will control the carrier density of thin semiconducting SWCNT film using thisnew method. We will show our recent results in the presentation.
This work was supported by JST CREST Grant Number JPMJCR16Q2, Japan.
[1] T. Takenobu et al. Nat. Mater. 2, 683 (2003).
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, Fax: +81-29-861-2786,
E-mail: h-kataura@aist.go.jp

Fig. 1: The molecular structures of DPSQ (a) and coronene (b). Schematic of thecarrier density control of SWCNTs (c).

- 54 -

1P-7

Surface chemical modification of defect-introduced graphite○Y. Obata1, H. Ishihara2, G. K. Sunnardianto3, T. Nishimura4, K. Kusakabe5, T. Kyotani2,
K. Takai 1,4Dept. Applied Chemistry, Hosei University, Tokyo 184-8584, Japan, 2Institute ofMultidisciplinary Research for Advanced Materials, Tohoku Univ., 3Faculty of Engineeringand Technology, Sampoerna Universitity, 4Research Center of Ion Beam Technology, 5Dept.
Materials Engineering Science, Osaka University, Osaka 560-8531, Japan1

The presence of defects in graphene gives remarkable changes in chemical structure andelectric properties due to its 2-dimensional nature [1]. In this study, defects are introduced into
the surface by Ar-ion beam irradiation and the changes in chemical structure and carrier
scattering by the surface adsorption of gaseous molecule are evaluated.
Defects were introduced into the surface of salvaged graphite as a model graphene byirradiation with Ar+ ion beam at the acceleration voltage of 3 keV after pre-annealing under 105
Pa around 200 ℃ in an UHV chamber, followed by exposing to 100 kPa of hydrogenmolecules or oxygen molecules or air exposure. Samples were analyzed by XPS, Elastic Recoil
Detection Analysis ERDA, TPD [2], and Raman spectroscopy.
The atomic composition ratio of O to C obtained by XPS shows Oxygen content is muchsmaller for the graphite surface exposed to hydrogen molecules immediately after the defectintroduction, compared with the air-exposure samples (Fig. 1). ERDA analysis shows theamount of hydrogen greatly increases for defects exposed to hydrogen molecules (Fig. 2). Thesesuggest we can control the termination atoms of defects by atmosphere after defects
introduction to graphite surface. Indeed, TPD shows H2 deposition was clearly seen inhydrogenated graphite above 300℃ (Fig. 3a), which was hardly observed in the oxygen
exposed sample (Fig. 3b) as similar as typical non-treated graphites in the temperature region
less than 800℃ [2] . The presence of a large amount of meta-stable hydrogen is understood byhydrogen migration into the graphene plane through atomic vacancy [3], resulting in theformation of graphane [4]. The smaller Raman D-band for hydrogenated vacancies than thatfor oxygen terminated vacancies suggests the inter valley scattering depends on the chemical
structure of defects in graphene. Exposing defects introduced into graphite by ion-beamirradiation to hydrogen molecule and air enables to control the terminating atoms of defects
such as C-H and C-O termination of vacancies.
[1] Chen, et al., Nat. Phys. 7, 535 (2011). [2] T. Ishii, et al, Carbon 125, 146, (2017). [3] G. K. Sunnardianto,et al, Int. J.
Hydrogen Energy, 43 (2017). [4] D. C. Elias, et al., Science 323, 610 (2009).

0.06

6
4

2

(1×15 Atoms / cm )

60

0.02

0

-11

(a.u.)

40

I × 10O/C

Hydrogen

0.04

20

0
Pristine

Vacancy Vacancy

+ H2
+ Air
Fig. 1 XPS O / C composition ratio

Pristine

Vacancy Vacancy

H₂
H₂O

(a)

2
0
6
4

(b)
H₂
H₂O

2
0

0

400
T / °C

800

+ H2
+ Air
Fig. 2 Hydrogen amount in defects

Fig. 3 TPD profiles for graphite (a)layers obtained by ERDA

Vacancy + H2 and (b) Vacancy + O2

- 55 -

1P-8
Electronic band modification of graphene by surface reconstruction of Au(001)○Tomo-o Terasawa1,2, Satoshi Yasuda1, Naoki Hayashi3, Wataru Norimatsu3, Takahiro Ito4,
Shinichi Machida1, Masahiro Yano1, Koichiro Saiki2, and Hidehito Asaoka1
1Advanced Science Research Center, Japan Atomic Energy Agency, Ibaraki 319-1195, Japan
2
Graduate School of Frontier Science, The University of Tokyo, Chiba, 277-8561, Japan3
School of Engineering, Nagoya University, Aichi 464-8603, Japan
4
Nagoya University Synchrotron radiation Research center, Aichi 464-8603, Japan

Graphene shows constant absorptance of 2.3% in the wide range of wavelengths [1]. The
modification of the band structure of graphene is expected to tune such the optical propertiesof graphene, which will be useful for opto-electronic devices of graphene. Recently, quasi-one
dimensional potential of hex-Au(001) reconstructed structure was reported to modify theelectronic properties of graphene grown on this structure [2]. Scanning tunnelingspectroscopy showed that the density of state of graphene from its Dirac point by 1-2 eVdecreased when graphene was grown on hex-Au(001). However, the band structure ofgraphene on hex-Au(001) was not observed, nor the relation between the band structure ofgraphene and the structure of Au(001) and graphene has not been revealed.
Here, we report the band structure of graphene grown on hex-Au(001) using angle resolved
photoemission spectroscopy (ARPES). We prepared graphene on hex-Au(001) by chemical
vapor deposition [3]. Figure (a) shows the low energy electron diffraction (LEED) pattern ofgraphene grown on Au(001) single crystal. Four-folded and twelve-folded spots correspond to
90-degree rotated one-dimensional hex-Au(001) reconstructed structures and epitaxiallygrown graphenes on them, respectively. Figure (b) shows the ARPES image of this sample
taken at AichiSR BL7U. The linear graphene band shows the intensity reduction at thebinding energy of approximately 0.9 eV, indicating the modification of band structure ofgraphene by hex-Au(001). We will discuss the relation between the band structure ofgraphene and the structure of graphene and hex-Au(001) on the basis of the results of ARPES,
LEED, and scanningtunneling microscopy inthe poster presentation.
[1] R. R. Nair, et al. Science,
320, 1308 (2008).
[2] X. Zhou, et al., ACS nano,10, 7550 (2016).
[3] T. Oznuluer, et al., Appl.
Phys. Lett., 98, 183101(2011).
Corresponding Author: T.
Terasawa
Tel: +81-29-284-3504,
Fax: +81-29-284-3504,
E-mail:terasawa.tomoo@jaea.go.jp

Figures (a) LEED pattern and (b) ARPES image of graphene grown on
hex-Au(100) reconstructed surface. (a) White and white broken circles
highlight diffraction spots from Au and graphene. The incident electron beam
was tilted from the surface normal to show the diffraction spots fromgraphene. (b) Energy reduction at the binding energy of approximately 0.9
eV is observed.

- 56 -

1P-9
Fabrication of transparent solar cell with directly grown WS2 in large scale○X. He1, Y. Yamaguchi1, T. Kaneko1, and T. Kato1,2

1

Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Layered transition metal dichalcogenide (TMD) is known as a true 2D material withexcellent semiconducting properties. TMD is one of the most attractive materials for futuretransparent and flexible optoelectrical devices due to their atomically thin structure, band gap
in visible light range, and high optical transparency. Although the solar cell of TMD has been
widely investigated by many groups, those are based on the pn junction type solar cell. Sincecomplicated structures are required to form pn junction structures in TMD such as dual gateelectrodes or position selective doping, the device size of pn junction solar cell with TMD islimited within very small region (few µm). In spite of the outstanding advantages of TMD,
those merits of TMD have not been applied for transparent and flexible solar cell, which is
attracted intense attention as a next-generation energy harvesting technology.
Recently, we have developed a new fabrication process of TMD-based solar cell [1]. In our
process, Schottky type device configuration is utilized, which can be simply formed byasymmetrically contacting electrodes and TMD. The power conversion efficiency clearly
depended on the work function difference between two electrodes (ΔWF), and a higher
efficiency could be obtained with higher ΔWF (Pd-Ni), which is consistent with our concept,
where Ni and Pd can form large and small Schottky barriers to operate as power-generationand carrier-collect regions, respectively. Based on the optimizations of electrodes and distance,
the power conversion efficiency can be reached up to 0.7 %, which is the highest value forsolar cell with similar TMD thickness [1].
In our previous study, we used conventional metals such as Ni and Pd to tune the Schottky
barrier height between electrode and TMD, which suppress the transparency of whole device.
Furthermore, the device size was limited within µm scale because of the size of exfoliatedTMD.
To improve the transparency of whole device, we use
indium tin oxide (ITO) as electrodes. The directly grownlarge area WS2 film are also used to overcome the limited
device size. After controlling the ΔWF of ITO electrodes
and optimizing the synthesis method of WS2, clear power
generation can be observed with ITO/WS2 basedtransparent solar cell in large scale(Fig.1). Since our simple
fabrication process includes high potential for large scale
fabrication, this achievement is very important for realizing Fig. 1. Typical optical image ofthe industrial application of TMD as a transparent and transparent solar cell fabricated withdirectly grown WS2 crystal.
flexible solar cell.
[1] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato, Sci.
Reports 7, 11967 (2017).
Corresponding Author: Xing He
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: he.xing.q7@dc.tohoku.ac.jp- 57 -

1P-10Installing Various Functional Groups on Li+@C60
Using Azide-containing 1,3-Cyclohexadienes○Hiroshi Okada,1,2 Takumi Takada,3 Shota Nagasawa,3 Yusuke Sasano,3 Eunsang Kwon,4
Yutaka Matsuo,1,2,5 Yoshiharu Iwabuchi3
1

Department of Mechanical Engineering, School of Engineering, The University of Tokyo,
Tokyo 113-8656, Japan
2
Center for Fundamental and Applied Research of Novel Nanocarbon Derivatives,
Center for Key Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan3
Department of Organic Chemistry, Graduate School of Pharmaceutical Sciences,
Tohoku University, Sendai 980-8578, Japan
4
Research and Analytical Center for Giant Molecules, Graduate School of
Science, Tohoku University, Sendai 980-8578, Japan
5
University of Science and Technology of China, Hefei 230026, China

Functionalized fullerenes have served an important role in energy-related andbiology-related research areas. Especially, appropriate functional groups introduced on afullerene cages provide particular functions, e.g., solubility improvement,[1] specificmorphology,[2] and photoinduced electron transfer.[3]To date, several chemical modifications of lithium-ion-containing fullerene (Li+@C60)
have been achieved using diazo or diene compounds.[4] In general, introducing a functionalgroup to Li+@C60 is often problematic due to several reasons. Facile and reliable methods toconnect various functional groups with Li+@C60 is desired for further application researches.
In this work, we employed the previously reported selective oxidation reactions from
cyclohexene to 1,3-cyclohexadiene,[5] in which high reactivity of Li+@C60 toward dienes has
been already known.[4b] Azide-containing 1,3-cyclohexadiene (1) was linked with several
acetylenes (2a-h) by Huisgen reactions to synthesize compounds 3a-h which reacted with
[Li+@C60]TFSI– to give functionalized lithium-ion-containing fullerenes (4a-h) in moderate
yields. This methodology can offer a reliable method to link Li+@C60 with desired functionalgroups.
1.25 eq.

O

Li +

N3
CuSO 4Ca-ascorbate

1

+
R

O

N N
N

O

H 2O-tBuOH

4

3a-h

2a-h

N

N
R

TFSI−
R

4N

CH2Cl20 ºC to rt, 24 h

Li +
TFSI−
4a-h

R = Ph (4a, 46%), 4-MeOC6H 4- (4b, 27%), 4-MeSC6H 4- (4c, 64%), 4-Me2NC 6H 4- (4d, 66%), 4-NO2C6H 4- (4e, 52%),
4f (42%),

H O
N
AcHN
O

OAc
OAc
OAc

4g (<86%),

4h (64%)

References[1] K. Okuda et al., Fullerene. Sci. Technol. 2000, 8, 89–104. [2] M. J. Hollamby et al., Nature Chem., 2014, 6,
690–696. [3] K. Ohkubo et al., Angew. Chem. Int . Ed. 2004, 43, 853–856. [4] a) Y. Matsuo et al., Org. Lett.
2012, 14, 3784–3787. b) H. Kawakami et al., Org. Lett. 2013, 15, 4466–4469. c) H. Ueno et al., J. Am. Chem.
Soc. 2014, 136, 11162–11167. d) H. Okada et al., J. Org. Chem. 2017, 82, 5868–5872. e) H. Ueno et al., J. Org.
Chem. 2017, 82, 11631–11635. [5] S. Nagasawa et al., Angew. Chem. Int. Ed. 2016, 55, 13189–13194.
Corresponding Author: H. Okada, Tel: +81-3-5841-0978, E-mail: hokada@photon.t.u-tokyo.ac.jp- 58 -

1P-11
ESR study of Sc-dimetallofullerene anions: (Sc2Cn)- (n=76, 78, 80)○Shun Yoshida, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan
In the previous symposium [1], we reported the isolation of (Sc2C76)-, (Sc2C78)-, and(Sc2C80)-. For (Sc2C78)- and (Sc2C80)-, two isomers, (Sc2C78(1, 2))- and (Sc2C80(1, 2))-, wereobtained respectively. For (Sc2C80(1))-, the ESR spectrum was measured, and the simulation
spectrum was well reproduced the observed one. On the other hand, for (Sc2C80(2))-, the ESR
signals could not be observed likely due to its small amount. In this study, we reinvestigatedthe ESR of (Sc2C80(2))-. In addition, the ESR of (Sc2C76)- and (Sc2C78(1, 2))- were measured.
Sc-dimetallofullerenes were produced and isolated by the same method reported previously,
and the amount of sample was increased [1]. The X-band ESR spectra of the isolated
Sc-dimetallofullerenes were measured at room temperature.
As shown in Fig. 1, both the ESR spectra of (Sc2C80(1, 2))- were obtained. ESR spectra of(Sc2C80(1, 2))- essentially consisted of 64 peaks respectively (some peaks were overlapped). It
is consistent with an unpaired spin is located on the encaged Sc dimer because the nuclear
spin of Sc is 7/2. The simulation spectrum for (Sc2C80(2))- was also well reproduced theobserved one. On the simulation parameters for two isomers, the g-factors are almost equal(g(1)=1.9948, g(2)=1.9947), but the hyperfine coupling constants are about 7% different(A(1)=497.5 MHz, A(2)=464.8 MHz). The difference might come from the different cage
structure of them.
For (Sc2C76)- and (Sc2C78(1, 2))-, the ESR signals could not be observed. The results
suggested that (Sc2C76)- and (Sc2C78)- might be (ScC80)- and (ScC82)- because the difference ofthe mass number between Sc2Cn and ScCn+4 is only about three. Therefore, we tried toneutralize (Sc2C76)- and (Sc2C78)- and to measure ESR spectra. The results will be presented in
the symposium.

Fig. 1 ESR spectra of (Sc2C80(1))- and (Sc2C80(2))-.
[1] S. Yoshida, et al. The 55th Fullerenes-Nanotubes-Graphene General Symposium 126 (2018).
Corresponding Author: Takeshi Kodama
Tel: +81-42-677-2530, Fax: +81-42-677-2525
E-mail: kodama-takeshi@tmu.ac.jp- 59 -

1P-12Isolation and structure determination of trifluoromethylated gadolinium
metallofullerenes○Shinobu Aoyagi1, Ayano Nakagawa2, Haruka Omachi2,3, Hisanori Shinohara2
1

Department of Information and Basic Science, Nagoya City University, Nagoya 467-8501,
Japan
2
3
Department of Chemistry and Research Center for Materials Science, Nagoya University,
Nagoya 464-8602, Japan
Endohedral metallofullerenes have been extensively studied since the first experimental
observation of La@C60 in a laser-vaporized supersonic beam in 1985. However, most of thesestudies have focused on metallofullerenes larger than C60 such as Ln@C82 (Ln: lanthanide).
There are few examples for isolation of small-cage (C60, C70, C72, and C74) lanthanide
metallofullerenes because of their extremely high chemical reactivity. Recently, we developed
an in situ trifluoromethylation method for the extraction and purification of these missing
metallofullerenes [1−3]. Here we report the isolation and structure determination of
trifluoromethylated gadolinium metallofullerenes (Gd@C60(CF3)3, Gd@C60(CF3)5,
Gd@C70(CF3)3, Gd@C74(CF3), and Gd@C74(CF3)3). Gd-metallofullerenes are promising as
magnetic resonance imaging (MRI) contrast agents. The fully enclosing carbon cagecompletely prevents leaching of the Gd atoms, resulting in lower toxicity than commerciallyavailable metal chelate reagents such as Gd-DTPA.
Trifluoromethylated Gd-metallofullerenes were synthesized by the modified arc-discharge
method. PTFE rods are placed near the discharge area as CF3 source. During arc discharge,
PTFE was decomposed and evaporated to produce CF3 radicals. Gd-metallofullerenes andempty fullerenes were extracted from the raw soot with o-xylene. Rapid separation of
Gd-metallofullerenes from empty fullerenes was carried out by the TiCl4 Lewis acid method.
High-performance liquid chromatography (HPLC) purification was conducted for isolation of
trifluoromethylated Gd-metallofullerenes. Single crystals of trifluoromethylated
Gd-metallofullerenes were obtained from solution. The single-crystal X-ray diffraction data
for structure determination were collected at SPring-8 large synchrotron radiation facility.
Figures show the molecular
structures of Gd@C74(CF3) (I),Gd@C74(CF3)
(II),
and
Gd@C74(CF3)3 derived fromthe X-ray crystal structure
analysis. The closed-shellmolecular
structures
aretheoretically stable and havewide HOMO-LUMO energy
gaps.
[1] Z. Wang et al. Angew. Chem. Int. Ed. 55, 199 (2016).
[2] A. Nakagawa et al. Nature. Commun. 9, 3073 (2018).
[3] A. Nakagawa et al. R. Soc. Open Sci. 5, 181015 (2018).
Corresponding Author: S. Aoyagi
Tel: +81-52-872-5061
E-mail: aoyagi@nsc.nagoya-cu.ac.jp- 60 -

1P-13
Electron excitation of an atom encapsulated in C60 fullerene○Haruki Torii1, Masayuki Toyoda1, Susumu Saito1, Tomonari Wakabayashi2,
Yasuyuki Kanai3, Noboru Sasao4, Motohiko Yoshimura4
1

Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan
3
Nishina Center for Accelerator-Based Science, RIKEN, Wako 351-0198, Japan
4
Division of Quantum Universe, RIIS, Okayama University, Okayama 700-853, Japan2

C60 fullerene has a hollow structure, and it is possible to stably trap a heterogeneous (X) atom
inside C60 fullerene. In fact, it has been confirmed experimentally that rare gas atoms [1], alkali
metal atoms [2], 15 group atoms [3], H2 molecule [4] and H2O molecule [5] can be contained
stably in C60 fullerenes. We use C60 fullerenes as a cage to enclose an X atom, and we can createa pseudo isolated atomic state inside C60 fullerene.
These X atoms endohedral C60 fullerene (X@C60) can make isolated atomic groups bycollecting in large quantities. It should be possible to create coherent quantum states withisolated atomic groups using X@C60 and laser. We expect them to be available for experiments
related to the emission of neutrinos by the process of releasing neutrino pair and photons withthe transition of coherent atoms from the excited states to the grand state [6].
The aim of the present work is to theoretically predict the possibility of selective excitationthat can excite only encapsulated X atoms without exciting C60 fullerenes. We use the density
functional theory (DFT) and the time-dependent density functional theory (TDDFT).
We calculated the oscillator strength distribution of X atom, C60 fullerene, and X@C60 (Fig.1).
Following these results, we discuss the possibility of selective excitation of X atoms.
[1] M. Saunders et al., R. J. Poreda, Science 259 1428 (1993).
[2] R. Tellgmann et al., Nature 382, 407 (1996).
[3] P. Jakes et al., Phys. Chem. Chem. Phys., 5, 4080 (2003).
[4] K. Komatsu, M. Murata and Y. Murata, Science 307, 238 (2005).
[5] K. Kurotobi and Y. Murata, Science 333, 613 (2011).
[6] 植竹 智，吉村 太彦，吉村 浩司，笹尾 登，高エネルギー
物理学研究者会議 高エネルギーニュース 33, 99 (2014).
Corresponding Author: H. Torii

Fig.1 The oscillator strength

Tel: +81-3-5734-2703, Fax: +81-3-5734-2739

distribution in the case of X = Xe.

E-mail: torii@stat.phys.titech.ac.jp- 61 -

1P-14Degradation of single-wall carbon nanotubes
by lung macrophages of mouse in vivo
OYing Xu1, Minfang Zhang1*, Mei Yang1, Masako Yudasaka 1, 2, Toshiya Okazaki1
1

National Institute of Advanced Science and Technology (AIST)
2
Meijo University

Carbon nanotubes (CNTs) have been demonstrated as promising nanomaterials for a wide
range of applications due to their unique properties. However, the toxicity of CNTs has notbeen fully understood especially the long-term toxicity and the degradation in vivo. Because
CNTs are most possibly to enter into lung of living body when they were exposed into
environment such as air, the investigations for the degradation in lung and pulmonary toxicityof CNTs were extremely important. In this study, we have investigated the degradation of
single-wall CNTs (SWNTs) by lung macrophages as well as the pulmonary toxicity after
single intravenous injection into mice for 2 months.
The SWNTs used in this study were produced by the super-growth method (SG-CNTs) [1]and dispersed in BSA solution by sonication as we reported previously [2]. After injection of
SG-CNTs into mice at 5 time-points in the period of 60 days, the blood and all organs weretaken out and analyzed. The degradation of CNTs in lung was estimated by observation of thecolor change and measurements of the quantities of CNTs in lung lysates, which wereprepared by treatment of lungs with collagenases and surfactant such as SDS. The pulmonary
toxicity was investigated by measurements of inflammatory cytokines in blood plasma andlung lysates.
Our results showed that the lungs were changed to grey-color after single CNT-injection
for 24 h indicating the CNT-accumulation in lungs. This grey-color of lung was gradually
faded and the quantities of SG-CNTs in lung lysates were decreased with increase of
post-injection time. About 60% of SG-CNTs were cleared from lungs within 60 days. The
measurement results of cytokines of TGF-β1, IL-6, INF-γ and TNF-α in blood plasma andlung lysates indicated there are no significant differences between the groups of control and
SG-CNTs injected mice, suggesting the low pulmonary toxicity of SG-CNTs. To further
confirm the degradation of SG-CNTs by lung macrophages, the study in vitro by using lungmacrophage cell line of MH-S was performed. The results showed that about 20 % SG-CNTs
inside of MH-S cells were degraded in one week. All results indicated that lung macrophages
digested SG-CNTs.
[1] K. Hata, et al. Science, 306, 1362 (2004).
[2] M. Zhang et al. Carbon, 127, 93 (2018).
Corresponding Author: M. Zhang
E-mail: m-zhang@aist.go.jp- 62 -

1P-15
Revisiting transport mechanism in semiconducting carbon nanotube films
with the aid of far-infrared plasmon response○Kanae Oi1, Tsuyoshi Kawai1, Yoshiyuki Nonoguchi1,21Division of Materials Science, Nara Institute of Science and Technology, NAIST, Takayama,
Ikoma, Nara 8916-5, Japan
2
JST PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

Single-walled carbon nanotubes (SWNTs) are known to exhibit unique ballistic carriertransport, while transport in their assembled films can be understood in terms of tube-to-tube
tunneling.[1] In this context, the methods of the Fermi level characterization are required inorder to understand the relationship between tunneling and doping level. The field effectapplication has mostly been used to tune and estimate the Fermi level. Here we use
one-dimensional plasmon resonance in the far-infrared (FIR) region for the estimation ofcarrier concentration.[2] Using this technique, this study demonstrates relationship between
doping level and electrical conductivity.
We used ~98% purity semiconducting SWNTs prepared using density gradientultracentrifugation (DGU) with nonionic surfactant pluronic F108.[3] This technique enables
the extraction of relatively low-doped SWNTs. Obtained SWNT dispersion was used toprepare semitransparent SWNT thin films on PET substrates. The doping level of SWNTs was
modulated with a one-electron oxidant, silver bis-(trifluoromethanesulfonyl)imde (AgTFSI).
As-purified semiconducting SWNT films showed small FIR absorption whereas, in thesame region, non-separated films provide strong plasmon resonance derived from the metallic
SWNTs. This fact suggests the successful purification of high quality, semiconducting
SWNTs up to ~98%. Upon chemical doping, the S 11 absorption in the near infrared (NIR)
region decreased and the broad extinction in the FIR gradually evolved, depending on theconcentration of oxidants (Fig.1(a)). Within the Drude model, this evolution could be
proportional to the carrier concentration (N) of each semiconducting SWNTs. The identicalsemiconducting SWNT films showed different electrical conductivity dependent on theoxidant concentration, that is,(a)(b)
carrier concentration. The
10 mg/mL
conductivity can be fittedwith the exponential functionof
integrated
plasmonresonance (0.02-0.084 eV)
0 mg/mL(Fig.1(b)). Assuming EF∝N
in the shallow doping region,
this observation strongly
Fig.1(a) NIR-to-FIR spectra of semiconducting SWNT films dependent on
suggests tunneling transport doping concentration. (b) Electrical conductivity of semiconducting SWNT
inthesemiconducting films as a function of integrated plasmon resonance (0.02~0.084 eV).
SWNT films. [1](A dotted curve shows an-exponential fitting line.)[1] T. Yamamoto et al. J. Appl. Phys., 122, 015308 (2017).
[2] A.Ugawa et al. PRB, 60, R11305 (1999).
[3] C. M. Homenick et al. J. Phys. Chem. C., 118, 16156−16164 (2014).
Corresponding Author: Yoshiyuki Nonoguchi
E-mail: nonoguchi@ms.naist.jp- 63 -

1P-16
Mechanical properties of carbon nanotubes with vacancy under theuniaxial strain○Kazufumi Yoneyama and Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba
305-8571, Japan
Carbon nanotubes (CNTs) are known to exhibit remarkable mechanical properties:
mechanical toughness and flexibility against tensile strain and bending, respectively,
tubular covalent networks of sp2 C atoms. Theoretical works elucidated that themechanical properties of CNTs strongly depend on their diameter and, chirality.
However, comprehensive knowledge about the mechanical properties with respect toboth local and global geometries is not clearly elucidated to date. So, in this work, we
aim to elucidated mechanical properties of CNTs with the diameter of about 0.95 nm interms of their chirality and atomic vacancies under the uniaxial tensile strain, using thedensity functional theory with the generalized gradient approximation.
We consider (12,0), (10,4), and (7,7) CNTs as the representative zigzag, chiral, andarmchair CNTs, respectively, with the diameters of about 0.95 nm. With the choice of
the CNTs, we can make quantitate investigation on the energetics of CNTs with respect
to the chirality and vacancies. Our calculations show that the Young’s modulus ofpristine CNTs is 0.741, 0.748, and 0.754 TPa for (12,0), (10,4), and (7,7) CNTs,
respectively. Atomic vacancies decrease the Young’s modulus irrespective of the CNT
chirality: the calculated values are 0.670, 0.650, and 0.601 TPa for (12,0), (10,4), and(7,7) CNTs, respectively. As for the structural deformation, the armchair CNT is thetougher than the chiral and zigzag CNTs: The armchair CNT retains its tubular structure
up to 40 % tensile strain with the critical tension of 200.84 nN. In contrast, the zigzag
and chiral CNTs retains 22 % with the tension 170.82 nN and 24 % with 195.56 nN,
respectively. With the defects, the critical tension substantial decreases down to 94.18,
96.02, and 85.40 nN for the zigzag, chiral, and armchair CNTs, respectively.

Corresponding Author: K. Yoneyama
E-mail: kyoneyama@comas.frsc.tsukuba.ac.jp- 64 -

1P-17
Fermi-level dependence of THz high-harmonic generationin single-wall carbon nanotubes○Hiroyuki Nishidome 1, Kohei Nagai 2, Yota Ichinose 1, Kengo Fukuhara 1, Junji Nozaki 1,
Junko Eda 1, Yohei Yomogida 1, Junichiro Kono3, Koichiro Tanaka 2, 4, Kazuhiro Yanagi 1
1

Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Kyoto University, Kyoto 606-8502, Japan3
Department of Electrical and Computer Engineering, Rice University, Texas 77005, USA
4
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501, Japan
Recent advancement of high power laser source in mid-infrared and terahertz (THz) region
enables us to investigate the extreme nonlinear optics in solids where the ground state of solid
becomes unstable due to strong light-matter interactions [1]. One of the unique phenomena in
the extreme nonlinear optics is high-harmonic generation (HHG). HHG has been intensively
studied in atomic gases, but observation of HHG in solid has long been difficult because ofunavoidable damage on samples by extremely strong laser light. But since observation of HHG
from ZnO [2] using THz light, HHG by intense THz light has been observed in various kindsof materials such as semiconductor crystals and two-dimensional materials (graphene [3], MoS2[4], etc.). In solid, there are two mechanisms in HHG, the interband and intraband mechanisms,
but contributions of the two mechanisms to HHG
are still elusive because various physicalparameters, such as crystal structure, band
structures, and conduction electrons, affectnonlinear processes in solid.
Here in this study, we investigated therelationship between HHG intensity and carrier
density in single wall carbon nanotubes. We usedelectric-double-layer (EDL) carrier injection withionic liquid to tune carrier density.
We prepared a high-purity (6,5) thin film, and Fig.1 HHG spectra as a function of gate
voltagetransferred it to a sapphire substrate, andfabricated EDL devices. Then we investigated
HHG using 62.5 THz laser with changing Fermi
level. The results are shown in Figure 1. We
observed decrease of HHG intensities as the shiftof gate voltage. This indicates, in this sample, theinterband mechanism is more dominant than theintraband mechanism. Moreover Fermi-level
dependence of different order harmonic intensities
are plotted in Fig.2, which is normalized by theintensity at 0 V. This shows that higher-orderharmonics decrease more rapidly. The shift ofFermi-level more strongly influences on theFig.2 Fermi-level dependence of 5th, 7th andhigher-order harmonic generations.
th
9 order harmonic generation. Each intensity
is normalized at 0 V

References:[1] K. Tanaka, Hikaribussei kenkyukai tutorial (2017)[2] S. Ghimire et al., Nature Physics, 7, 138 (2010)[3] N. Yoshikawa et al., Science 356, 736 (2017)[4] H. Liu et al., Nature Physics, 13, 262 (2016)
Corresponding Author: K. Yanagi, Tel: +81-42-677-2494, E-mail: ynagi-kazuhiro@tmu.ac.jp- 65 -

1P-18Preparation of SWNT/PE Composites via Melt Blending○Nao Otsuki, Ryota Yamada, Takumi Adachi, Yutaro Saito, Masaru Sekido
Department of Materials Science and Engineering, National Institute of Technology, Sendai
College, Natori 981-1239, JapanDue to their outstanding mechanical properties, Young modulus around 1 TPa, tensile
strength about 100 times greater than steel, and low density CNTs are considered as the ideal
reinforcement fillers for the nanocomposite materials. Previously we have reported the tensile
strength of SWNT/Polyethylene (PE) composites prepared by Melt Blending and found thattensile strength of SWNT/PE was increased as the weight ratio of SWNT was increased. In
this work we introduced carboxy group (COOH) and ocatadecylamine (ODA) on the surfaceof SWNT and studied the tensile strength of SWNT-COOH/PE and SWNT-ODA/PE
composites.
Preparation of SWNT-COOH and SWNT-ODA was shown in scheme 1[1]. Briefly SWNT
(3 g) was added into 60 mL of a mixture (v/v, 1/3) of nitric acid and sulfuric acid. Then thesuspension was stirred for 24hours at room temperature to introduce the carboxy group(SWNT-COOH). Obtained SWNT-COOH (3 g) was added into the mixture of thionyl
chloride (60 mL) and DMF (1.5 mL). Then the mixture was stirred for 24hours at 70 °C toobtain SWNT-COCl. The mixture of SWNT-COCl (3 g) and ODA (12 g) were stirred for
24hours at 100 °C to afford SWNT-ODA. SWNT-COOH/PE and SWNT-ODA/PE composites
were prepared by Melt Blending at 220 °C, screw speed of 100 rpm and a recycle time of 10
minutes.
We will discuss the difference among SWNT, SWNT-COOH and SWNT-ODA as areinforcement filler for PE matrix.
Scheme 1[1] Mohamed Abdel Salam, Robert Burk. Arabian Journal of Chemistry. 10, 921-927(2017)
Corresponding Author: Nao Otsuki
Tel: +81-22-381-0329,

Fax: +81-22-381-0329 ,E-mail: s1400312@sendai-nct.jp- 66 -

1P-19
Electron emitters of textured carbon nanotube arrays for X-ray tubes
via facile, rapid few-minute processes
Sae Kitagawa1, Hisashi Sugime2, Hayato Ochi3, Daizo Takahashi3, ○Suguru Noda1,4
Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan
Waseda Institute for Advanced Study, Waseda University, Tokyo 169-8050, Japan
3
MEIDENSHA CORPORATION
4
Research Institute for Science and Engineering, Waseda University, Tokyo 169-8555, Japan
1

2

There are increasing demands for X-ray scanners for non-destructive inspections inindustrial, medical, and security applications. X-ray tubes with electron field emitters (FEs)can make the whole devices compact/portable owing to the low power consumption. Carbon
nanotubes (CNTs) have been extensively studied and excellent performances have beenreported for morphology-controlled CNT-FEs via lithography-based processing for flat-panel
display applications [1,2]. Low-cost production of CNT-FEs is essential for their wide use.
In this work, we propose facile fabrication of morphologically-controlled CNT-FEs. Si
substrates with pyramid-shaped textures were formed by sandpaper-rubbing andalkaline-etching and used as the template substrates. Fe/Al catalyst was sputter-deposited,tens-μm-tall vertically-aligned CNTs were synthesized by chemical vapor deposition, Ag-Cu
braze alloy was vapor-deposited on the CNTs, the CNTs were brazed to Cu holders, and the
CNTs/Ag-Cu/Cu holders were peeled off from the substrates. Each step took a few minutes.
CNTs on the Ag-Cu braze alloy had pyramid-shaped morphology (Fig. 1a). The CNTs canbe brazed and transferred to the multiple Cu holders at once (Fig. 1b,c). The four CNT-FEs
showed good FE performances (Fig. 1d). An X-ray photograph of an electric drill taken usinga CNT-FE is shown as an example (Fig. 1e). The CNT-FEs are processed at high temperatureand free from organic compounds such as binders, thus will show little degassing, which isimportant for vacuum applications including X-ray tubes.

Fig. 1. CNT-FEs in this work. (a) Cross-sectional SEM image of CNTs held on Ag-Cu braze
alloy. (b,c) Brazing CNT-FEs to Cu holders. (d) FE performance. (e) X-ray photograph.
[1] L. Gangloff, et al., Nano Lett. 4, 1575 (2004).
[2] Y. Shiratori, et al, Nanotechnology 20, 475707 (2009).
Corresponding Author: S. Noda

Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 67 -

1P-20
Atomic Scale In-Situ Study on Carbon Nanotube Growth from CoCo3C Catalysts○Feng Yang, Yan Li

College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

The metal catalysts play important roles in chemical vapor deposition (CVD) of
single-walled carbon nanotubes (SWNTs). It was reported that solubility of carbon intransitional metal nanoparticles such as Fe, Co, and Ni is associated with the SWNT
growth, which is generally believed to via a vapor–liquid–solid mechanism [1, 2].
Revealing the catalyst structure with atomic resolution under reactive environment is
crucial for understanding the controlled growth mechanism.
Here, using Co as a model catalyst, we investigated the role of active species CoCo3C in catalyzing SWNT nucleation and growth by using aberration-correctedenvironmental transmission electron microscope (ETEM). We recorded the carbon
atoms dissolving into Co nanoparticles and formation of inhomogeneous Co-Co3C
structure during CVD. The growth of SWNTs was realized only by the cooperation of
Co and Co3C in proper carbon feeding conditions. The evidences are in situ and realtime with atomic scaled resolution. These findings are crucial for the rational design ofcatalysts for high efficiently catalyzing SWNTs.
[1] V. Jourdain and C. Bichara. Carbon, 58, 2 (2013).
[2] M. Li, Y. Li et al. Top. Curr. Chem., 375, 29 (2017).
Corresponding Author: Yan Li
Tel: +86-10-62756773, Fax: +86-10-62756773,
Web: http://old.chem.pku.edu.cn/page/liy/E-mail: yanli@pku.edu.cn- 68 -

1P-21
Separation of metal/semiconductive SWNTs by ATP separation
technique and Raman spectroscopy aimed for film-making
Hinano Yamada1, Tsubasa Shiogai1, ○Shinzo Suzuki1
1

Department of Physics, Kyoto Sangyo University, Kyoto 603-8555, Japan

Aqueous two phase (ATP) separation technique, first developed by C.Y.
Khripin et al. [1] have been applied to mono-dispersed sodium cholate (SC)solution (2 wt%) of SWNTs produced by arc-burning of Ni/Y-carbon
composite rod in helium atmosphere [2, 3] and mono-dispersed solution of
CoMoCAT SWNTs [4], in order to investigate the optimum condition for the
separation of metal/semiconductive SWNTs, in combination with Raman
spectroscopy and fluorescence spectroscopy.
In this presentation, this combination of ATP separation technique andRaman spectroscopy was further applied to mono-dispersed solution of
SWNTs produced by arc-burning technique and others, aimed for getting
enough amount of metal/semiconductive SWNTs for thin-film making on themembrane filter after filtration procedure.
Figure 1 shows an example of thin-film made from PEG fraction after ATP
separation from SWNTs generated by arc-burning technique. Its color is ocher,suggesting that the ratio of semiconductive SWNT in PEG solution is higher
than that in raw dispersed solution.
[1] C.Y. Khripin et al., J. Am. Chem. Soc., 135, 6822-6825(2013).
[2] N. Kanazawa et al., The 46th fullerenes-nanotubes-graphene general symposium, 1P-27 (2014).
[3] K. Uratani, et al., The 52nd fullerenes-nanotubes-graphene general symposium, 3P-15 (2017).
[4] T. Watase et al., The 54th fullerenes-nanotubes-graphene general symposium, 1P-20 (2018).
Corresponding Author: S. Suzuki
Tel: +81-75-705-1631, Fax: +81-75-705-1640,
E-mail: suzukish@cc.kyoto-su.ac.jp- 69 -

Figure 1.

1P-22Growth of Boron Nitride Layers on Single-Walled Carbon Nanotubes
and Graphite○Hayato Arai1, Satoshi Yotsumoto1, Yongjia Zheng1, Taiki Inoue1, Rong Xiang1,
Shohei Chiashi1, Shigeo Maruyama1,2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy Nanoengineering Lab, National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8564, Japan

Single-walled carbon nanotubes (SWCNTs) have been attracting attention since they
were discovered. The excellent properties such as high carrier mobility [1] and high thermal
conductivity [2] of SWCNTs make them promising material for nanoelectronics [3],optoelectronics [4], and so on. Hexagonal boron nitride (h-BN) and boron nitride nanotubes(BNNTs) also have been drawing interest as low-dimensional insulating materials. Thesematerials can be used to screen the effects of impurities or substrates on the properties ofgraphene or SWCNTs [5, 6]. Therefore, synthesis of heterostructures of these materials arehighly desired. We developed the facile CVD method to grow BN layers on SWCNT
templates using ammonia borane as a precursor [7]. However, the detailed mechanism on
nucleation and growth is still unclear.
In this work, we performed comparative study of BN-layer growth on SWCNTs andgraphite for realizing higher quality SWCNT-BNNT heterostructures. Suspended SWCNTs
and exfoliated graphite were prepared on Si substrates, and BN-layers were grown on them.
The morphology of synthesized layers was investigated by SEM, TEM and AFM. As shownin Fig. 1(a), BN-layers were grown on SWCNTs. Figure 1(b) shows BN-layers grown ongraphite surface. AFM observation reveals that BN-layers were grown to form pyramidal
structures, which indicates the growth was non-self-limiting. Additionally, we comparedBN-layers grown with and without hydrogen and found that hydrogen during CVD growth
was effective for removal of the impurities which are derived from ammonia borane.

Fig. 1 (a) TEM image of BN-coated SWCNT. (b) SEM image of BN-layers grown on graphite
surface.
[1] T. Durkop, et al., Nano Lett., 4, 35 (2004). [2] M. Fujii, et al., Phys. Rev. B, 95, 65502 (2005). [3] S. J. Tans,et al., Nature, 393, 49 (1998). [4] J. A. Misewich, et al., Science, 300, 783 (2003). [5] C. R. Dean, et al., Nat.
Nanotechnol., 5, 722 (2010). [6] A. Baumgartner, et al., Appl. Phys. Lett., 105, 23111 (2014). [7] R. Xiang, et al.,arXiv:1807.06154.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983, E-mail: maruyama@photon.t.u-tokyo.ac.jp- 70 -

1P-23
Analysis of oxidation effects on the reactions between cobalt clusters andethanol by FT-ICR mass spectrometer○Ryohei Yamada1, Tomoyasu Inoue1, Shohei Chiashi1, Shigeo Maruyama1,2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Energy NanoEnginerring Lab. National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki. 305-8564, Japan

Single-walled carbon nanotubes (SWCNTs) are studied all over the world because they are
expected to be useful materials of devices such as supercapacitor electrode and solar cells.
Chemical vapor deposition (CVD) method is one of the most common methods to produce
SWCNTs. Although there are a lot of studies about SWCNTs, their growth mechanism is notclear. It is important to understand how SWCNTs grow in order to improve quality of
SWCNTs. Alcohol catalytic CVD (ACCVD) method is one of the CVD methods. In ACCVD
method, cobalt and ethanol are often used as the catalyst and carbon source, respectively.
Moreover, cobalt catalyst may be oxidized because of exposure to atmosphere before
SWCNTs growth.
Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer makes it possible toanalyze the chemical reactions between atom clusters and gas molecules. In the past research,
reactions of cobalt non-oxide clusters and ethanol is studied and “simple chemisorption” and“dehydrogenated chemisorption” were observed [1]. In this study, reactions between cobalt
oxide clusters and ethanol were observed by FT-ICR mass spectrometer.
It was found that cobalt oxide clusters (CoxOy+) showed different reaction depending on
both x and y. When Co13O2+ cluster and ethanol reacted, “simple chemisorption” or“dehydrogenated chemisorption” occurred as shown in Fig. 1(a). This reaction is the same as
the reaction of cobalt non-oxide clusters. On the other hand, H2 adsorption and C2H4
adsorption mainly occurred in the reaction of Co13O16+ cluster as shown in Fig. 1(b). In
summary, ratio of oxygen affects reactivity of cobalt oxide clusters. When oxygen-richclusters reacted with ethanol, H2 adsorption is likely to occur. When oxygen-poor clusters
reacted with ethanol, “simple chemisorption” and “dehydrogenated chemisorption” occurred.
Moreover, C2H4 adsorption occurred in the reaction of most of cobalt oxide clusters.
Co13O2780+

Before reaction(b)

EtOH (0.2 s)+C2H2O+C2H4O
800

820

m/z

Before reaction
Intensity (arb. unit)

Intensity (arb. unit)

(a)

1000

840

Co13O16+

EtOH (0.2 s)+H2+C2H5OH

+C2H6
1050

m/z

(×3)
1100

Fig. 1 Spectra of Co13O2+ (a) and Co13O16+ (b) cluster and products resulted fromethanol reaction.
[1] S. Inoue et al. Jpn. J. Appl. Phys., 47-4, 1931-1936 (2008).
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5841-6983,
Web: http://www.photon.t.u-tokyo.ac.jp/index-j.html
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 71 -

1P-24The Enhancement of the Electric Field around the Metallic CylindricalTube○Yuan Tian, Fenda Rizky Pratama, Muhammad Shoufie Ukhtary, Riichiro Saito
Department of Physics, Graduate School of Science, Tohoku University,
Sendai 980-8578, Japan
Electric field properties around nanotube and nanowire has become a point of interest in thefield of plasmonic science and tip enhanced Raman spectroscopy(TERS), in which the tip can bemodelled as a nanowire [1]. There are lots of researches on the near field excitation around different
kinds of nanowire (NW) and nanotube (NT). However, most of the researches conducted about nearfield excitation of NW and NT focus on the situation of a plasmon excited by an incoming light thatwas linearly polarized in parallel to NW&NT’s axial direction, in which situation would excite
plasmon that propagates in parallel to axial direction [2,3]. It is important to investigate the behaviorof radial and tangential component of the electric field, which could excite a plasmonic resonancemode that propagates radically around the surface of NW/NT [4]. This kind of plasmonic resonancemight play some role in electric field enhancement and enhanced Raman intensity.
In this work, we investigate the nearfield excitation around a metallic NW bysolving the Maxwell equations. We aremainly interested in the radial component of
the TM mode. We solve possible frequencyof the radial TM mode, which was restrictedby boundary conditions at surface of the
nanowire. A relationship between the mode
frequency and the diameter is plotted in Fig.
1. We then study the near field excitation
when an incident light was introduced (Fig.2). Bychanging the diameter of the cylinder and thefrequency of the incident light, we investigate the

Figure.1 Dispersion relation of surface plamon
frequency ω as the function of 1/a, where a is theradius of NW, ν is the frequency mode, and ωp is
plasma frequency.
𝑧𝑧

enhancement of the electric field surrounding the cylinder due tothe excitation of the TM mode.
Reference:[1] Alexander S. McLeod et.al., Phys. Rev. B 90, 085136 (2014).
[2] Daksh Agarwal et.al., Nano Lett., 17 (3), pp 1839–1845 (2017).
[3] Pan Deng et.al., Chinese Phys. B 22 097305 (2013).
[4] Ken-ichi Sasaki et.al., Appl. Phys. Lett. 108, 163109 (2016).

𝑦𝑦𝑥𝑥

Figure.2 An incident light linearly polarized
perpendicular to axial direction of NW.

- 72 -

1P-25
Effect of water on NO adsorption of ACFs
⃝Y.Hikage1, S.Nishijima1, K.Takai1,2
12Graduate school of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, JapanNOx are one of the harmful chemical species causing air pollution, where NO molecule is major
species in the vicinity of the source of pollution. Elimination of NOx diluted in huge volume of air,adsorption by activated carbon fibers (ACFs) is a promising strategy [1]. However, the details
mechanism of NOx adsorption has been not well known yet. One of the reason making the phenomena
complexed is the presence of a lot of water vapor in the actual atmosphere. In microscopic view point,
ACFs consists of 3D random network of nanographenes having localized spins. Thus, spin magnetism
is good prove to investigate the adsorption phenomena of NO molecule having spin moment (S=1/2)
into ACFs. In this study, adsorption properties and chemical reactivity of NO in ACFs is investigatedin terms of spin magnetism.
Activated Carbon Fibers (FR-20, Kuraray) of 0.5 mg was vacuum-heated at 473 K for 30 min at
2.7×10-3 Pa, followed by introducing water vapor to ACFs at 2.5 kPa for 30 minutes. After that, NO
gas introduction into water-introduced ACFs at a partial pressure of 2 kPa and evacuation down to
2.7×10-3 Pa was repeated each ca. 10 hrs. The spin magnetism in each step evaluated by a ESR
spectrometer (JEOL FA-300) at room temperature.
Fig.1 shows the time evolution the ESR linewidth (ΔHpp) and the peak-integrated area (I) NOadsorbed ACFs without water introduction. Both the ΔHpp and I decreases when evacuation of ACFs
and are recovered by NO-introduction again. This is atributted to the dipolar field of NO and its
chemical reactions with the edge of nanographen [2]. Fig.2 shows the changes in ΔHpp and I after water
adsorption (w) and NO introduction (w-NO) and evacuation (w-NO-VAC) from those for vacuumheated for ACFs (HT). Irrespective to the presence of water, the ΔHpp and I shows similar behavior
after water / NO introduction and their evacuation. This is attributed that NO is hardly soluble in waterin contrast to its oxidized form; NO2. The nanographen edge is known to oxidize NO but it is prevented
due covering with water.
[1] T. Shimohara et al, J. Jpn. Soc. Atmospheric Env., 2013, 48, 65-73.

12ΔHpp-ΔHpp.HT(mT)

ΔHpp (mT)[2] S. Nishijima etal FNTG (2016)

9
6

1400
1000

4
2
0
-2

1.2

I/IHT (%)

I

3
1800

6

0

10

20

Time (h)3040Fig.1 Time dependence of ΔHpp and I for NO adsorbed(●) and desorbed (○) ACFs
Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002- 73 -

H2O

w-NO

w-NOVACw

w-NO

w-NO-VAC

1
0.8
0.6

Fig.2 Changes in ΔHpp and I for w, w-NO, w-NO-VAC
from those of HT.

1P-26
Van der Waals Epitaxy of Gallium Nitride on Graphene
Ukyo Ooe, Shinichiro Mouri, Yasushi Nanishi, Tsutomu Araki
Department of Electrical and Electronic Engineering, Ritsumeikan University,
Kusatsu, Shiga 525–8577, Japan
Atomically thin layered materials are promising materials for future electronic and opticaland electronic devices [1]. On the other hand, gallium nitride (GaN) is known as a usefulmaterial as the component of light emitting device and one of the hopeful candidates of power
conversion semiconductor device at high frequency region. Integration of these layeredmaterials on GaN could further enlarge the functionality of these devices. To progress this issue,
the challenge to grow high quality film of GaN on layered materials by van der Waals epitaxy[2] is required. Here, we demonstrated that metal covered van der Waals epitaxy, which is therepetition of Ga and nitrogen-rich supply, was effective to obtain GaN thin film on graphene.
Figure 1 (a) shows the SEM image of the GaN grown on the graphene supported on SiO2/Si
substrate by ordinal MBE growth procedure, the simultaneous supply of Ga and nitrogenplasma. The nanoscale small crystals of GaN with random orientation were obtained. The
impact of nitrogen plasma introduced defects on graphene which might work as nucleation
centers for these misoriented nanocrystals. Figure 1 (b) shows the SEM image of the GaN
grown on the graphene supported on SiO2/Si substrate by metal covered van der Waals epitaxy.
It is obtained nearly continuous film of GaN but a lot of small grains were still remained on thesurface. Initial coverage of gallium on graphene prevents the nitrogen plasma damage ongraphene which could reduce the misoriented nucleation resulting in the film growth. The
substrate under the graphene might be also important to improve the film quality. Figure 1 (c)shows the SEM image of the GaN grown on the graphene supported on GaN template by metal
covered van der Waals epitaxy. The number of small grains were reduced, and relatively flat
film were obtained. This could be caused by the remote homoepitaxy [3] which is the epitaxial
growth using the potential of substrates under the graphene.

Fig. 1 (a) SEM image of GaN crystals grown on graphene/SiO2/Si by ordinal MBE growth.
(b) SEM image of GaN crystals grown on graphene/SiO2/Si by metal covered van der Walls
epitaxy. (c) SEM image of GaN crystals grown on graphene/GaN template by metal covered
van der Walls epitaxy.
[1] Q. H. Wang et al., Nat. Nanotechnol. 7, 699 (2012).
[2] A. Koma, J. Cryst. Growth 201, 236 (1999).
[3] Y. Kim et al., Nature 544, 7650 (2017).
Corresponding Author: S. Mouri
Tel:+81-77-561-2884
E-mail; iguchan@fc.ritsumei.ac.jp- 74 -

1P-27
Tuning structure and electron transport properties of Grapheneby chemical modification using Ion-beam irradiation○Kosuke Nakamura1, Hiroki Yoshimoto2, Tomoaki Nishimura3, Kazuyuki Takai 1, 2, 3
1
2

Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Faculty of Bioscience and Applied Chemistry, Hosei University, Tokyo 184-8584, Japan
3
Research Center of Ion Beam Technology, Hosei University, Tokyo 184-8584, Japan

Irradiation of ion-beam is one of the interesting strategy for chemical modification ofgraphene to tune its structure and electronic properties. In this study, we attempted to modify
graphene by irradiating Au⁺ ion directly to graphene (200 keV, 1013 - 1014 / cm2). Irradiatedion would penetrate through bare graphene on the substrate, so a NaCl thin-film sacrificial layer
was fabricated in order to distribute ions around graphene position [1]. The ion-modified
graphene after removing the sacrificial layer was evaluated by Raman spectroscopy (LabRAM
HR), Rutherford Backscattering Spectrometry (RBS), and electric conductivity measurement.
Raman spectroscopy of Au⁺ irradiated graphene with NaCl thin-film sacrificial layer, shows
clear G band near 1580 cm-1, indicating honeycomb lattice structure of graphene remained evenafter irradiation (Fig. 1). A significant Raman D band (1340 cm-1) and D’ band intensity (1620
cm-1) suggests a successful introduction of defects causing intervalley scattering and intravalley
scattering after irradiation, respectively.
Field effect transistor (FET) of graphene was fabricated after irradiation, and the mobility ofirradiated graphene was measured by applying gate voltage sweep range (Fig. 2). Irradiatedgraphene showed hole-doped nature, and the mobility decreased down to 57 cm2 / Vs from 87
cm2 / Vs, being responsible for the larger scattering by introduced ions and defects by theirradiation. We will also present the effect of irradiation of I⁻, which has opposite sign of thecharge compared with Au+ on graphene on our poster.
This project was supported by JSPS and RFBR under the Japan - Russia Research
Cooperative Program.
[1] K. Nakamura, et al, FNTG symposium (2018)
Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002, E-mail: takai@hosei.ac.jp

0.161013 / cm2
G

Conductivity σ (mS)Intensity (arb.unit)

D

0.14
D’

After

1480
Raman Shift (cm-1)

0.08
0.06
0.04
0

1680

Fig. 1 Raman spectra of graphene

Before0.1

0.02

Before1280

0.121013 / cm2

After-60 -40 -20 0
20 40
Gate Voltage Vg (V)Fig. 2 Conductivity of graphene

before / after irradiation

before / after irradiation- 75 -

60

1P-28Probing phonon energy redistribution by MD dynamics of transient
dispersion relation at graphene nanoribbon○Tatiana Zolotoukhina1, Yukie Noda 1
1

Department of Mechanical Engineering, University of Toyama, Toyama 930-8555, Japan

Study of plasmons in graphene, hexagonal BN, MoS2 and another monolayer atomic
crystal reveals the production of hybridized plasmon-phonon modes [1]. In graphene/h-BN
metastructures, coherent oscillations of the electron density in graphene and the atomic
vibrations in h-BN produce hybridized plasmon-phonon modes. Experimentally, acoustic
phonons in monolayer and nanowire structures are probed by nanophotonic methods [2] thatwill be developed to distinguish modulated or hybridized modes.
On the time-scale of electron energy transfer to phonons within 500 fs, the propagation ofphonons within a few ps can be considered as a guided by interaction process. However,phonon dispersion relation in thermal energy transfer is considered primarily as anequilibrium process. In plasmonic applications, such approach can’t resolve coupling ofelectronic excitation with phonons in dynamics. In order to be able to distinguish dynamicchanges in phonon dispersion relations, we test an approach where transient calculations inmolecular dynamics (MD) method estimate dispersion relation matrix D(ω,k) variation. The
sequence of transient values of consequent D(ω,k) matriсes are collected with fixed delay
during thermal pulse propagation in the graphene sample. To extract changes in phonon mode
dispersion functions ω(k), we consider the distribution of each mode’s maxima on the seriesof D(ω,k) matrix. The difference in the matriсes due to maxima location and amplitude can beevaluated by differentiation in k-space that will produce an exact (ω,k) location of maxima inthe dynamics of the phonons. Previous calculation of single D(ω,k) for different temperaturesin graphene nanoribbon has shown energy redistribution between maxima inside a single
mode dispersion function ω(k). The mode propagation changes energy distribution between
phonon modes in the graphenesample. The MD method with
REBO potential for graphene
nanoribbon that was thermally
excited in a small area at one end
has been tested. The energy
distribution between basic andFig.1 The k-space derivative (left) locales maxima (ω,k)
transient phonon modes in the 1st
with 0 values (across single k) for the transient dispersion
Brillouin zone inΓM direction ismatrix D(ω,k) in the ΓM direction (right),
calculated, see Fig. 1. We expect tosee in the ω(k) maxima changes related to mode propagation and the intensity-dependent
mode cut-off on the transient dispersion matrix will serve to separate different amplitudes.
㼤㼋㼏㼋㼗㼋㻾㼑
㼤㼋㼏㼋㼗㼋㻵㼙

㻢㻚㻜㻜㻱㻙㻜㻝㻝㻠㻚㻜㻜㻱㻙㻜㻝㻝㻞㻚㻜㻜㻱㻙㻜㻝㻝㼤㼋㼏㼋㼗㻜㻚㻜㻜㻱㻗㻜㻜㻜㻙㻞㻚㻜㻜㻱㻙㻜㻝㻝㻙㻠㻚㻜㻜㻱㻙㻜㻝㻝㻙㻢㻚㻜㻜㻱㻙㻜㻝㻝㻙㻤㻚㻜㻜㻱㻙㻜㻝㻝㻙㻝㻚㻜㻜㻱㻙㻜㻝㻜

㻜

㻞㻜㻜㻜

㻠㻜㻜㻜

㻲㼋㼞

[1] A. Politano and G. Chiarello, Nanoscale, 2014, DOI: 10.1039/c4nr03143a[2] P.-A. Mante, L. Belliard and B. Perrin, Nanophotonics 2018; 7(11): 1759–1780[3] T. Zolotoukhina, K. Kumaki, K. Tawara, Abstracts of the 54th FNTG General Symposium 2018.
Corresponding Author: T. Zolotoukhina
Tel: +81-76-445-6739, Fax: +81-76-445-6739,
E-mail: zolotu@eng.u-toyama.ac.jp- 76 -

1P-29Asymmetric field screening of h-BN for carrier accumulation in graphene
Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
A single sheet or thin films of h-BN are regarded as the supporting substrate or the insulating
layer for other two-dimensional materials, such as graphene and transitionmetal
dichalcogenides, owing to their atomically flat surfaces and insulating electronic property.
Indeed, graphene adsorbed on h-BN exhibits remarkable transport properties compared withthat on surfaces of bulk insulating materials. In this work, we aim to explore the field
screening ability of h-BN thin films for graphene in the field effect transistor (FET) structure
to give the guiding principle for designing the FET using h-BN as an insulating layer for thegate electric field. Using the density functional theory combined with the effective screening
medium method, we found that h-BN thin films act as insulating layers for carrier
accumulation in graphene under the low carrier concentrations. In contrast, under high carrier
concentrations, hole is spilled over the outermost h-BN layer while the most of the electron isstill accommodated in graphene, indicating their asymmetric field screening ability for carrier
injection in graphene.
Corresponding Author: S. Okada
Tel: +81-29-8535921
E-mail: sokada@comas.frsc.tsukuba.ac.jp- 77 -

1P-30Preparation of Atomically Thin NbSe2 Layers by Selenizing Nb Films○Chisato Anndo, Yusuke Nakanishi, Hong En Lim, Yutaka Maniwa, and Yasumitsu Miyata
Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
Atomically thin NbSe2 can serve as the models for exploring superconductivity in thetwo-dimensional (2D) limit [1], as well as future ohmic electrodes [2]. To date, 2D NbSe2 hasbeen fabricated by exfoliation, molecular beam epitaxial [3], and chemical vapor deposition.
On the other hand, selenization of Nb precursors is also a promising technique for thesynthesis of thin-layer NbSe2 films. This approach enables the controlled growth of NbSe2
films at desired position, allowing for the design of functional devices [4]. However, theselenization strategy for atomically thin NbSe2 films still remains unexplored.
In this work, we studied the growth of 2D NbSe2 films by selenizing Nb films. Thin Nb
films (<20 nm) were first prepared on Si wafers by electron beam deposition. Then, the Nbfilms were exposed to selenium vapor at high temperatures (~800 °C). Figure 1 shows Raman
spectra of the samples obtained by selenizing the deposited Nb films with various thicknesses.
Raman spectra of these samples show two prominent peaks around 230~250 cm−1, which canbe attributed to E12g and A1g peaks of NbSe2. The peak separations increase as the thickness of
precursor Nb films is reduced, suggesting that the layer numbers of NbSe2 films can becontrolled by the initial film thickness. Detailed discussion will be presented in theconference.

Fig. 1 (a) Raman spectra of thin-layer NbSe2 fabricated by selenizing Nb films with various thicknesses. (b) The
peak separation between E12g and A1g modes depending on the film thickness.
[1] N. E. Staley et al. Phys. Rev. B. 80, 184505 (2009).
[2] A. R. Kim, et al. Nano Lett. 16, 1890-1895 (2016)[3] T. Hotta, et al. Appl. Phys. Lett. 109, 133101 (2016)[4] Y. Kim, et al. Nano Lett. 16, 5928-5933 (2016)
Corresponding Author: Y. Nakanishi, Y. Miyata,
Tel: 042-677-2508, E-mail: naka24ysk@tmu.ac.jp, ymiyata@tmu.ac.jp- 78 -

1P-31Analysis of plane antenna which radiates circular polarized light○Masato Maruoka1, Taisei Maeda2, Riichiro Saito 1
1 Department of Physics, Tohoku University, Sendai 980-8578, Japan
2 National Institute of Technology, Sendai College 989-3128, Japan

When linearly polarized light comes into the chiral shape antenna such as the capital S-shape,
the induced current partially radiates left or right-handed circularly polarized light dependingon the position of the antenna [1]. However, the physical origin of circularly polarized light is
not clear even though some simulation was performed. Previously, our group showed that
doped graphene absorbs almost 100% of the incident electromagnetic wave in GHz and THz
frequency [2]. Combining both the stories, graphene could be used for an atomic layer
antenna that strongly absorbs and radiates THz circularly polarized light.
In order to discuss the optical response of circularly polarized light, we use the so-called
MEEP [3] which solve the Maxwell equation numerically within thefinite-difference-time-domain (FDTD) method. We obtain the S-shaped antenna radiates
circularly polarized light depending on the position of the antenna numerically. Moreover, notonly S-shaped antenna but rectangular antenna can radiate circularly polarized light when theincident light is linearly polarized oblique to the antenna. In both case, rotating positive andnegative charge can be seen where circularly polarized light comes out.
We will also discuss the physical interpretation why circularly polarized light is radiated.
We expect the circularly polarized light originates from the current which the direction offlow is rotating. Regarding the antenna as RLC circuit, the resistance, inductance, andcapacitance depend on the thickness, length, and width of the antenna [4]. The phasedifference of current which flow at longitudinal direction and transverse direction appear
when there is the anisotropy of resistance, inductance, and capacitance.
[1] T. Narushima and H. Okamoto, J. Phys. Chem. C 2013, 117 (45).
[2] M. S. Ukhtary et al. APEX, 8, 055102 (2015).
[3] https://meep.readthedocs.io/en/latest/[4] C. P. Huang, X. G. Yin, H. Huang, and Y. Y. Zhu, Opt. Express 17(8), 6407–6413 (2009).
Corresponding Author: Masato Maruoka
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: maru@flex.phys.tohoku.ac.jp- 79 -

1P-32
Exciton Diffusion in hBN-encapsulated Monolayer TMDs
○Takato Hotta 1, Shohei Higuchi1, Yosuke Uchiyama1, Keiji Ueno 2, Kenji Watanabe 3,
Takashi Taniguchi 3, Hisanori Shinohara 1 and Ryo Kitaura 1
1

Department of Chemistry, & Institute for Advanced Research, Nagoya University, Nagoya
464-8602, Japan2
Department of Chemistry, Saitama University, Saitama 338-8570, Japan
3
National Institute of Materials Science, Tsukuba 305-0044, Japan

Optical responses from low-dimensional systems, such as transition metal dichalcogenides(TMDs), are dominated by the excitonic effect even at room temperature due to the strong
coulomb interaction between electrons and holes. In response to optical excitation of TMDs, aseries of responses, including creation, diffusion and radiative recombination of excitons,
occurs in the optical excitation of TMDs, and the exciton diffusion is one of the important
processes for understanding optical properties of TMDs. However, to investigate intrinsic
exciton diffusion in TMDs, extrinsic effects, such as substrate effects, need to be suppressed.
In this work, we have conducted systematic investigations of exciton diffusion in
hBN-encapsulated monolayer TMDs.
We have fabricated high-quality hBN-encapsulated TMDs with (1) the all-dry transfer
method and (2) the dry-transfer combined with nano-squeeze method [1]. In the nano-squeeze
method, contaminants between hBN layers and a TMD are removed through sweeping thesurface of samples by AFM tip in the contact mode. Fig. 1 shows an optical microscope imageof the fabricated hBN-encapsulated monolayer MoS2. The monolayer MoS2 was grown
directly onto a hBN substrate, and a hBN flake was transferred on it to form thehBN-encapsulated structure. The Red flame in Fig.1 corresponds to the region treated with thenano-squeeze method, where no bubbles can be seen. Fig. 2 (a) and (b) show an image of
excited laser spot and a PL image of excitonic emission of hBN/MoS2/hBN, respectively. As
clearly seen in the line profile shown in Fig. 2 (c), the PL image is larger than the image oflaser, which clearly demonstrates the diffusion of excitons. The details of sample preparation
and PL measurement will be discussed in this presentation.

Fig. 1 An optical microscope image of thefabricated hBN/MoS2/hBN structure. Red flame
corresponds to a region cleaned with AFM.

Fig. 2 (a) and (b) Images of excitation laser (532 nm)
spot and PL of excitonic emission (1.88 eV) at 300 K.
(c) line profiles of laser (black) and PL (red) intensity
along green lines in Fig 2 (a) and (b)[1] M. R. Rosenberger, et. al., ACS Appl. Mater. Interfaces 10, 10379-10387 (2018).
Corresponding Author: R. Kitaura Tel: +81-52-789-3660, Fax: +81-52-747-6442,
E-mail: r.kitaura@nagoya-u.jp- 80 -

1P-33Growth of TMDs with Cold-walled Metal-Organic
Chemical Vaper Deposition○Satoshi Iida, Takato Hotta, Hisanori Shinohara, and Ryo Kitaura

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan¥Since the discovery of graphene, two-dimensional (2D) materials have been attracting

considerable attention. Recent research on 2D heterostructures, including heterostacks andheterojunctions, has clearly demonstrated the possibility on emergence of novel properties inthese heterostructures1. To fully explore the possibility, development of a highly-controllable
crystal growth method is indispensable.
For this purpose, we have focused on
Metal-Organic Chemical Vaper deposition (MOCVD), in particular, a cold-wall type
MOCVD. In this presentation, in addition to development of a cold-wall MOCVD setup,
results on MOCVD growth of a transition metal dichalcogenide,
WS2, is presented.
Figure 1 shows a photograph of the cold-wall MOCVD setup
developed. This is a vertical type chamber, and metal organic
sources are supplied from top to down through the shower headto a substrate placed on PBN heater. We used (t-Bu=)2W(NMe2)2
and Et2S as W and S precursors, respectively, and reaction
temperature is typically 700 ~ 800 ℃. Figure. 2(a) and (b) show
a typical optical image of WS2 grown on SiO2/Si substrate
without NaCl-assist and with NaCl-assist, respectively. We havesuccessfully reduced nucleation density to form triangular WS 2
crystals on SiO2. We
also found that it ispossible to reduce
nucleation
density
without NaCl assist
through
precisecontrol of growth
condition.

Nuclear density≈0.780 µm-2

Nuclear density≈0.014 µm-2

Fig. 2(a) Optical image of WS2 grown Fig. 2(b) Optical image of WS2 grownon SiO2/Si substrate using NaCl assist.

on SiO2/Si substrate.
[1] A. K. Geim. et al., Nature 499, 419-425 (2013).

Corresponding Author: R.Kitaura Tel: +81-52-789-2477, Fax: +81-52-747-6442
E-mail: r.kitaura@nagoya-u.jp- 81 -

1P-34In-Plane Heterostructures of Twisted Bilayer Transition Metal
Dichalcogenides○ Hong En Lim1, Zheng Liu2, Takahiko Endo1, Kana Kojima1, Yusuke Nakanishi1, Yutaka
Maniwa1, Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Inorganic Functional Materials Research Institute, National Institute of Advanced Industrial
Science and Technology (AIST), Nagoya, Aichi 463-8560, Japan

In-plane heterostructures of transition metal dichalcogenides (TMDCs) provide a novel
platform for the study of one-dimensional confined electron system at an atomically thininterface [1]. Besides using the combination of different materials such as MoS2 and WSe2, inplane heterostructures can also be formed with only a single component, giving the chemicallyhomogenous electronic heterostructures [2, 3]. As the band structure of TMDCs is governed
also by the layer thickness and/or the stacking configuration [4, 5], one could foresee thegeneration of such hybrid structures through the manipulation of these factors.
Herein, we report the synthesis of angle-modulated, in-plane bilayer TMDCs
heterostructures. (Fig. 1). Monolayer crystals of WSe2 was fabricated on top of its single-layerthick, polycrystalline film, generating the bilayer domains with regions of different stacking
configurations. Raman intensity map displays an inhomogenous coupling interactions withinbilayer structure (Fig. 1b), which is due to the different interlayer distance present for eachstacking orientations as they undergo dissimilar degree of steric effect [5]. Region of higher
crystal symmetry, the AA’ or AB stacking, exhibits stronger B12g signals with lowered PLenergy and weakened PL intensity (Fig. 1c, d). The unequal electronic structures created forms
the heterojunction with chemically homogenous components, which would be useful to create
a functional 1D interface.

Fig.1 (a) Optical image of the bilayer WSe2 heterostructure synthesized. Dotted line outlines the bilayer domain.
Grain boundaries are marked with arrows. (b) Raman intensity map of the B 12g peak, which clearly indicates thepresence of different coupling interactions within the bilayer domain. (c) Raman and (d) PL spectra taken at spots
indicated in (a). Scale bars are 10 μm.
[1] K. Kobayashi et al. Sci. Rep 6, 31223 (2016).
[3] S. Cho et al. Science 349, 625-628 (2015).
[5] K. Liu et al. Nat. Commun. 5, 4966 (2014).

[2] G. Eda et al. ACS Nano 6, 7311-17 (2012).
[4] W. Zhao et al. ACS Nano 7, 791-797 (2013).

Corresponding Authors: H. E. Lim, Y. Miyata

E-mail: lim@tmu.ac.jp, miyata-yasumitsu@tmu.ac.jp
Tel: +81-42-677-2508- 82 -

1P-35
UV-Polarizer Film of Aligned Polyyne Molecules
Ryoske Sata1, Hal Suzuki1, Y. Morisawa1, M. Hatanaka2, ○Tomonari Wakabayashi1
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan
Institute for Research Initiatives, Nara Institute of Science and Technology (NAIST),
Ikoma 630-0192, Japan, and PRESTO, JST, Kawaguchi 332-0012, Japan
1

2

Electronic absorption bands of conjugated linear carbon chain molecules, namely polyynes
H(C≡C)nH (n = 5-7), are exploited to devise light-polarizing films applicable to the UV. Laser
ablated polyynes are separated in size and dispersed in a film of polyvinyl alcohol (PVA),
which is stretched to align the trapped linear polyyne molecules inside. As a nature of thestructural anisotropy, transition dipole of the UV absorption for polyyne molecules is inparallel with the molecular axis and the absorption occurs only for the electromagnetic wave
having the amplitude of its electric vector along the molecular axis. Aligned and fixedorientationally in the solid PVA film, polyyne molecules act as selective absorbers of one ofthe polarization components of incident light at particular wavelength. Using a light source of
linearly polarized UV light, whose direction of polarization is rotatable, angular dependenceof the absorption intensity is investigated for the stretched PVA film containing aligned
polyyne molecules and analyzed in terms of an order parameter in the theory of linear
dichroism.

Figure. (a) Absorption intensity of linearly polarized light plotted as a function of the angle
between the direction of polarization and the direction of stretching of the PVA film. Fourcurves correspond to absorption bands of C10H2 at λ = 260, 247, 235, and 224 nm, which are
fitted by the equation, A(λ,θ) = α – log [1 – {β / (1 + β)}(1 + 3 cos 2θ)]. (b) The line fitting of
the maximum or minimum absorption intensity, namely A∥ or A⟘, for the four curves in (a)provides the common offset, A0, and the order parameter, S.
Corresponding Author: T. Wakabayashi
Tel: +81-6-4307-3408, Fax: +81-6-6723-2721,
E-mail: wakaba@chem.kindai.ac.jp- 83 -

1P-36
Laser Ablated Octatetrayne Derivative C12H8
Nozomu Kitamura1, Ayato Osawa1, Ryoske Sata1, Hal Suzuki1, Yusuke Morisawa1,
Miho Hatanaka2, ○Tomonari Wakabayashi1
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan
Institute for Research Initiatives, Nara Institute of Science and Technology (NAIST),
Ikoma 630-0192, Japan, and PRESTO, JST, Kawaguchi 332-0012, Japan1

2

Laser ablation of carbon particles in liquid organic solvents produces stable linear carbon
chain molecules in abundance [1]. Besides the series of major products, i.e. hydrogen-endcapped polyynes H(C≡C)nH (n = 4-8), other series of molecules, namely polyyne derivatives,
are known to form efficiently [2]. For selective formation of molecules having a specificlength or an end-capping group, it is crucial to understand the formation mechanism ofpolyyne chains under the experimental condition [3]. We have pursued a series of specificpolyyne derivatives, which are identifiable by systematic wavelength shifts in their UV
absorption spectra and classified by their appearance in the spectral band shape. In this work,
we identified one of those derivatives as an octatetrayne derivative, R(C≡C)4R’, having themolecular formula of C12H8. The UV-resonance Raman spectra were interpreted by molecularorbital calculations of sixteen structural isomers for the octatetrayne derivative.
The target molecule was formed by laser ablation of graphite particles in liquid hexane,
followed by separation using HPLC [4,5]. Figure 1 shows UV absorption spectra of theisolated derivative in hexane. In addition to the strong UV absorption band at 234 nm, peaks
are discernible at longer wavelengths with an increment of ~2000 cm-1 as finger prints for the
polyynic skeleton. The phosphorescence spectrum in solid hexane at 20 K in Figure 2 ispeaking at 532 nm in the proximity to the counterpart of H(C≡C)4H, indicating a polyynic
chain of C8 present in the molecular framework. Knowing the molecular weight of m/z 152 byresonant two-photon ionization mass spectroscopy (R2PI-MS), there remains C4H8 having
one degree of unsaturation for the rest part of the molecule, R and R’. We will discuss themolecular structure of the octatetrayne derivative in more detail.
[1] M. Tsuji et al. Chem. Phys. Lett. 355, 101 (2002). [2] Y. Wada et al. Eur. Phys. J. D 66, 322 (2012). [3] A.
Ramadhan et al. Carbon 118, 680 (2017). [4] T. Wakabayashi et al. Chem. Phys. Lett. 433, 296 (2007). [5] T.
Wakabayashi et al. Carbon 50, 47 (2012).

Fig. 1. UV absorption spectra.

Fig. 2. Phosphorescence spectra.

Corresponding Author: T. Wakabayashi
Tel: +81-6-4307-3408, Fax: +81-6-6723-2721,
E-mail: wakaba@chem.kindai.ac.jp- 84 -

1P-37First order resonant Raman spectra of TaP○Pang Xiaoqi, Nguyen T. Hung, Ahmad R. T. Nugraha and Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, JapanTaP is Weyl semimetal which has been inferred experimentally from its bulk electronic
band structure determined from ARPES measurements [1]. As a Weyl semimetal, Tap has agreat potential for applications, because of its topological nature of Weyl nodes. Thus it
would be useful to product the resonant Raman spectra, one of the conventional method toverify the crystal and electronic structure of materials, of TaP. We also need it to understandthe optical properties and optimize the crystal structure in the synthesis of TaP for practicalapplications.
In this work, we will obtain the resonant Raman spectra of Tap theoretically based on
first-principles calculation. Raman intensity is proportional to square of the product of twoelectron-photon matrix elements and an electron-phonon matrix element. We obtain theelectron-photon matrix element by Quantum
Espresso package [2] and electron-phonon matrix
element by modified EPW package [3]. Then, we
use our own program to calculate the first orderresonant Raman spectra [4]. In Fig 1, we show
the refractive index obtained by electron-photon
calculation. At last, we will compare thecalculation result of resonant Raman spectra withthe recent experimental result.

Figure 1: The real part and image part ofrefractive index of TaP.

[1] L. X. Yang, et al., arXiv:1507.00521[2] P. Giannozzi, et al., J. Phys.: Condens. Matter 21, 395502 (2009)[3] J. Noffsinger, et al., Compt. Phys. Commun. 181, 2140 (2010)[4] Y.Tatsumi, et al., Phys. Rev. B 94, 235408 (2016)
Corresponding Author: Pang Xiaoqi
Tel: +81-22-795-6442, Fax: +81-22-795-6447,
E-mail: pang@flex.phys.tohoku.ac.jp- 85 -

1P-38Angle-Dependent Resonant Raman Spectraof LaAlSi○Tong Wang, Nguyen T. Hung, Ahmad R.T. Nugraha, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Recently, a class of topological materials, so called the Weyl semimetal such as LaAlSi(Fig. 1), have been attracted for the angle-resolved Raman spectroscopy due to their uniqueelectron structure. Thus it would be useful to know resonant Raman
spectra for understanding crystal structure and phonon properties.
In this study, we calculate the resonant Raman intensity for Weyl
semimetal LaAlSi by considering both electron-photon andelectron-phonon interactions. To obtain the Raman tensor, we use ourown program [1] combined with the first-principle calculation, in which
the electron-photon interaction matrix elements can get from the
Quantum–Espresso package [2], and electron-phonon interaction matrix
elements can get from EPW package [3]. Our results are consistent withthe experimental data, in which we will show the angle- and laser
energy-dependent of the Raman intensity.
Fig.1 Structure of LaAlSi[1] Y. Tatsumi, R. Saito, Phys. Rev. B 97, 115407 (2018).
[2] P. Giannozzi, et al., J. Phys.: Condens. Matter 21, 395502 (2009)[3] J. Noffsinger, et al., Compt. Phys. Commun. 181, 2140 (2010)

Corresponding Author: Tong Wang
E-mail: wang@flex.phys.tohoku.ac.jp- 86 -

2P-1
Epoxide contamination in fullerenol production caused by ambient ozone
Sirikanya Chokaouychai1,* , Qi Zhang1
1School of Aerospace, Transport and Manufacturing, Cranfield University, Cranfield,
MK43 0AL, United Kingdom

This work reports a pitfall in fullerenol (hydroxylated fullerene) production which should betaken into account when establishing research or production facilities. The work was an unforeseenpart of the project on fullerenol production via phase-transfer catalysis [1]. Following laboratory
relocation, some of the produced fullerenol showed unusual observation during production,
unexpected infrared absorption in addition to fullerenol characteristic absorptions [1,2], andsignificant change in thermal decomposition behaviour. Analyses of infrared spectra andthermogravimetric data indicated presence of epoxide groups in the product [3], in addition to thedesired hydroxyl groups. Empirical formulae derived from thermogravimetric and elemental
analyses were also in agreement with the results from infrared and thermogravimetric techniques.
Considering frequent uses of laser-based equipment (which generates ozone) in nearby laboratories
in the same proximity, it was suggested that ambient ozone might have converted some fullerene(in toluene reservoir) to fullerene epoxide (C60O) before the hydroxylation step [4]. Ideally, a C60O
molecule should be easily converted to fullerenol with a diol structure, and a two-step reaction
mechanism has been proposed for the conversion. Nevertheless, the presence of epoxide groups inthe product indicated that some epoxides had not been converted. Explanation has been suggested
that polarity of C60O molecules in toluene reservoir might have been key to preventing epoxidegroups from being converted to diols. Hydroxylation took place only at accessible regions of thefullerene cages. Epoxide contamination affects fullerenol purity, properties and behaviours, which
are critical to its applications. Therefore, it is strongly recommended for fullerenol to be produced
under ozone-free environment in order to avoid epoxide contamination in the product.
[1] Li et al. J. Chem. Soc., Chem. Commun. 0, 1784 (1993).
[2] Kokubo et al. Nano Res. 4, 204 (2011).
[3] Goswami et al. Thermochim. Acta. 419, 97 (2004).
[4] Dattani et al. J. Colloid Interface Sci. 446, 24 (2015).
Corresponding Author: S. Chokaouychai*Tel: +66-2-564-7000 Ext. 6695
E-mail: sirikanya.cho@nanotec.or.th* Current Affiliation: National Nanotechnology Center, National Science and Technology Development Agency,
111 Innovation Cluster 2 (INC2), Thailand Science Park, Phahonyothin Road, Khlong Nueng, Khlong Luang,
Pathum Thani, 12120, Thailand.

- 87 -

2P-2
Energetics and electronic structure of single walled carbon nanotube
encapsulated in boron nitride nanotube○Kaoru Hisama1, Susumu Okada2, Shohei Chiashi1 and Shigeo Maruyama1,3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
3
Energy NanoEngineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8564, Japan
Tubular structures of C or BN allow them to form one-dimensional van der Waals (vdW)
heterostructures by coaxially arranging them with appropriate diameter difference. Indeed, arecent experiment demonstrated that a carbon nanotube (CNT) is wrapped with BN nanotube(BNNT) [1] as an ultimate version of the surrounded gate transistor where CNT and BNNT are
conducting channel and dielectric, respectively. Because the physical properties of CNT and
BNNT are sensitive to their diameter, such one-dimensional vdW hybrids may exhibit
interesting variation in their energetics and electronic structures, being different from the simple
superpose of each constituent. Thus, in the present work, we aim to provide the energetics andelectronic structures of CNT encapsulated in BNNT, using the density functional theory withthe local density approximation.
Here, we consider double-walled NT consisting of inner (n,0) CNT and outer (m,0) BNNT,
as the representative structure of the hybrids. The total energy calculation elucidated that themost stable combination of chirality index is m=n+9 where the interwall spacing is 0.35 nm.
Under the optimum combinations, the calculated cohesive energies of the NTs are about 10
meV/atom weakly depending on the tube index and interwall atomic arrangements [Fig. 1(a)].
As for the electronic structure, band gaps of inner CNTs are modulated by forming the hybrid
structures depending on the interwall stacking arrangements [Fig. 1(b)].
stacking

1

AA
AB(N)
AB(B)
pristine CNT

AB(N)Band gap [eV]

AA

0.5

AB(B)
Dotted lines: layers
Points: nanotubes

0
10

12

14

16

Inner CNT chirality index (n,0)

Figure 1 (a) Interwall cohesive energy and (b) band gap of CNT(n,0)@BNNT(n+9,0) as a function of
the index n. Dotted lines in (a) indicate the cohesive energy of hBN and graphene with AB(B), AB(N)and AA stacking arrangements.
[1] R. Xiang, et al., arXiv preprint arXiv:1807.06154.
Corresponding Author: Shigeo Maruyama
Tel: + 81-3-5841-6421, Fax: +81- 3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 88 -

2P-3
Thermoelectric Simulation for Carbon Nanotube Film
○Kotaro Fujisaki, Masaaki Tsukuda, Takahiro Yamamoto
Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
Nano carbon materials are expected to be potential candidates for nontoxic, flexible andhigh power thermoelectric devices, which are suitable for wearable power generation
application [1, 2]. Carbon nanotube (CNT) thin films consisted of CNT network are ones ofsuch thermoelectric devices. However, the physical origin of their thermoelectric performanceremains to be elucidated yet due to complexity of CNT thin films. In order to increase theconductance and the Seebeck coefficient of CNT films, it is essential to understand therelation between the CNT network structure and its electrical and thermal properties.
To understand the relation between the CNT network structures and its thermoelectricperformance, we theoretically investigated the effect of several parameters such as CNT
length and density on thermoelectric performance with the thermal circuit model and theelectrical circuit theory. First, we generated two-dimensional random network (as shown in
Fig. 1) by changing the CNT length and density. Second, for the generated CNT network, we
calculated the temperature distribution bysolving thermal circuit equations. Third,
we calculated voltage of each CNT bytemperature difference based on thetemperature distribution. Forth, we
calculated the Seebeck coefficient andelectrical conductance by solving electricalcircuit equations for the CNT networks. In
this simulation, the CNT length waschanged from 0.5 µm to 1.5 µm, keeping
the density at 2 µg/cm2. The obtained
results in this study are summarized as Fig. 1: Generated two-dimensional random CNT network
follows.
1. The electrical conductance of the films increases with the CNT length.
2. The Seebeck coefficient of the films is almost dependent on the Seebeck coeffient of thecontact points between two CNTs in any CNT lengths.

[1] T. Izawa, K. Takashima, S. Konabe and T. Yamamoto, Synthetic Metals 225, 98-102 (2017).
[2] J. Bahk, H. Fang, K. Yazawa and Ali Shakouri, Journal of Materials Chemistry C, 3, 10362-10374 (2015).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1492
E-mail: takahiro@rs.tus.ac.jp- 89 -

2P-4
Improvement of catalytic performance by adding single-walled carbon
nanotubes aqueous dispersion○Kazuki Kishida1, Toru Harigai1, Tsuyoshi Tanimoto1, Hirofumi Takikawa1,
Takeshi Hashimoto2, Takumi Yana2, Yoshiyuki Suda1
1

Department of Electric and Electronic Information Engineering, Toyohashi University ofTechnology, Toyohashi, Aichi 441-8580, Japan
2
Meijo Nano Carbon Co., Ltd., Nagoya, Aichi 463-0003, Japan

Polymer electrolyte fuel cells (PEFC) have been attracting attention due to a variety offeature such as low environmental pollution, low operating temperatures, and high theoretical
efficiency of energy conversion. However, reduction of platinum usage is one of major
problems since utilization of platinum leads high expense. Therefore, carbon nanomaterials
which have high conductivity, durability and high surface area are widely used as catalyst
supports [1]. In this study, aqueous dispersion including single-walled carbon nanotubes(SWNT) with high crystallinity was added to commercial fuel cell catalyst and catalytic
performance of prepared catalysts were evaluated based on electrochemical measurements.
Commercial fuel cell catalyst (Pt/Vulcan XC-72, TEC10V50E, 50 wt.%-Pt) and singlewalled carbon naotubes aqueous dispersion (200 mg / 100 ml) were obtained from TANAKAKIKINZOKU KOGYO K.K. and Meijo Nano Carbon Co. Ltd., respectively. Following
amounts of single-walled carbon naotubes were added to 200 mg of Pt/Vulcan XC-72 catalyst:
0, 5.0, 7.5, 10 and 20 mg. And then they were mixed physically by auto pestle for 5 minutes.
Further appropriate amounts of nafion and methanol were added to slurry-like catalyst followed
by ultrasonication for 30 minutes to prepare catalyst ink. Catalytic performance was evaluatedbased on cyclic voltammetry in water bath at 25 ℃. Herein, Ag/AgCl electrode, platinum
electrode, glassy carbon electrode and 0.5 M of sulfuric acid (H2SO4) were used as referenceelectrode, counter electrode, working electrode and electrolyte, respectively.
The cyclic voltammogram at the 10th of each catalyst ink is shown in Fig.1. The catalytic
performances were evaluated based on calculation of electrochemical active surface area
(ECSA) with following equation.
ECSA [m2 ⁄g] =𝑄𝑄𝐻𝐻 [C]  (1)⁄[μC
cm2 ] × Pt [g]𝑄𝑄𝑠𝑠where, 𝑄𝑄𝐻𝐻 is the charge derived from the areasurrounded with electric double layer capacity and thevoltammetric peaks. And the charge associated withhydrogen desorption per unit surface area (𝑄𝑄𝑠𝑠 ) has
been accepted as 210 μC/cm2 in the case ofpolycrystalline platinum. According to calculated
ECSA, Pt/Vulcan XC-72 catalyst added 10 mg of
SWNT showed highest catalytic activity. Therefore,
we found that addition of appropriate amount of
SWNT leads catalytic performance to improvement.
[1] Y. Suda, et al., Materials Today Communications, 3, 96 (2015)
Corresponding Author: Y. Suda
Tel: +81-532-44-1211
E-mail: kishida.kazuki@pes.ee.tut.ac.jp- 90 -

Fig.1 Cyclic voltammogram of different
catalysts in 0.5 M H2SO4 at 25 ℃

2P-5
Molecular Dynamics Simulations of the Influence of a Single Water Layeron the Electrical Conductivity of Graphene○Yusei Kioka1, Yuki Maekawa 2, Kenji Sasaoka 3, Takahiro Yamamoto 1,2,3
Department of Electrical Engineering, Tokyo University of Science, Tokyo, 125-8585, Japan2
Department of Liberal Arts, Tokyo University of Science, Tokyo, 125-8585, Japan
3
Water Frontier Science & Technology Research Center, RIST, Tokyo University of Science,
Tokyo, 125-8585

1

It had long been believed that a graphene cannot be adsorbed by water molecules because
it is a hydrophobic material. However, the previous theoretical studies based on classicalmolecular dynamics (MD) simulations showed that single or double water layers are formed
on a graphene surface, depending on number of water molecules [1,2]. Before the results
obtained from these simulations, Homma et al. discovered the existence of the similar watermolecular layers around a carbon nanotube by both photoluminescence measurements andclassical MD simulations [3]. The microscopic structure of the surface water layer parallel tothe graphene had been clarified by our research. According to this study, the two-dimensional(2D) hydrogen-bond network is formed on the water layers on graphene surface [4].
Following these previous studies, we investigated the influence of such a 2D network on theelectrical properties of the graphene.
In this work, we constructed the microscopic structure of a single water layer between agraphene and a hexagonal boron nitride substrate using classical MD simulations. For theobtained structures, we calculated the electric dipole of water molecules when electric field
applied in the direction perpendicular to the graphene. By using this result, we estimated theelectrical conductivity of the graphene. We explain that the correlation between electric dipoleof a single water layer and the electrical conductivity of graphene at poster session.
[1] T. A. Ho and A. Striolo, J. Chem. Phys. 138, 054117 (2013).
[2] A. Akaishi, T. Yonemaru, and J. Nakamura, ACS Omega 2, 2184 (2017).
[3] Y. Homma, et al., Phys. Rev. Lett. 110, 157402 (2013).
[4] Y. Maekawa, K. Sasaoka and T. Yamamoto, Jpn. J. Appl. Phys. 57, 035102 (2018).
Corresponding Author: Takahiro Yamamoto,Tel&FAX: +81-3-5213-0990,
E-mail: takahiro@rs.tus.ac.jp- 91 -

2P-6
Charged exciton (trion) in anisotropic atomically thin 2D material ReS2
○Xiaofan Wang, Keisuke Shinokita, Yuhei Miyauchi and Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Atomically thin transition metal dichalcogenides MX2 (M=Mo, W, X=S, Se, Te) haveattracted much attentions in the fields of semiconductor physics and applications [1]. In
monolayer MX2 with isotropic crystal structure, the fundamental optical properties aregoverned by exciton (electron-hole pairs) and trion (charged exciton) due to their enhanced
attractive Coulomb interactions [2]. Recently, the exciton and trion in anisotropic atomicallythin materials such as unstable black phosphorus (BP) has also been experimentally observed[3].
Here we studied the optical properties of stable rhenium disulfide (ReS2) with anisotropic

spectra at +40 V appears at 1.56 eV due tonegatively charged exciton (negative trion). Thisis the first experimental observation of charged
exciton (trion) in ReS2. Figure 1(b) shows thepolar plot of detected PL intensity with linearlypolarized components from trions. The strongly
polarized anisotropic emission from the trions areexperimentally observed. The detail natures ofanisotropic trion in ReS2 will be discussed.
[1] S. Z. Butler et al., ACS Nano 7, 2898 (2013).
[2] A. Chernikov et al., Phys. Rev. Lett. 113, 076802 (2014).
[3] R. Xu et al., ACS Nano 10, 2046 (2016).
[4] X. Wang et al., Adv. Funct. Mater. 1806169 (2018).
Corresponding Author: Kazunari Matsuda
Tel: +81-774-38-3460
E-mail: matsuda@iae.kyoto-u.ac.jp- 92 -PL Intensity (a. u.)

crystal structure. The few layer ReS2 with field effect transistor structure was fabricated by dry
transfer process. Figure 1(a) shows photoluminescence (PL) spectra of three-layer (3L) ReS2
by applying the gate voltage of -40 and +40 V.
-40 V
(a)
The PL spectrum at -40 V shows the strong
emission peaks at 1.58 eV, and 1.62 eV, which are
attributed to the recombination of bound electron+40 V
Trion
Excitonhole pair (neutral exciton) [4]. In contrast, theadditional emission peak (hatched peak) in the

1.5

1.6
1.7
Energy (eV)Trion(b) 120 90 60
Exciton
150
30

180

0

210
330
240 270 300

Figure 1 (a) PL spectra of 3L-ReS2 at backgate voltage of -40 V and +40 V at 20 K. The
spectra were fitted with multiple Voigt
functions. Filled lines correspond to trion
contributions. (b) Polarization dependence of
the integrated PL intensity of trion andexciton (1.58 eV) components at +40 V.

2P-7
Interface electroluminescence from in-plane heterostructures basedtransition metal dichalcogenide monolayers○Yuhei Takaguchi1, Jiang Pu2, Hirofumi Matsuoka2, Yu Kobayashi1,
Yutaka Maniwa1, Taishi Takenobu2, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan

Heterostructures of transition metal dichalcogenides (TMDCs) are an attractive system torealize high-performance devices such as light-emitting diodes and tunnel field-effecttransistors. To investigate their electronic properties and device performance, we havedeveloped growth processes of various in-plane heterostructures based on TMDC monolayers[1] and have demonstrated the electric double layer light emitting diodes (EDLEDs) of theheterostructures [2,3]. In our previous study, the WS2/MoS2 EDLED shows linear
electroluminescence (EL) around the heterointerface and the two prominent EL peaks of
MoS2 and WS2 as observed in photoluminescence (PL) spectra. In this study, we reportanomalous interface EL from the heterointerface of WSe2/MoSe2 in-plane heterostructures.
WSe2/MoSe2 in-plane heterostructures were grown on sapphire substrates by salt-assisted
chemical vapor deposition (CVD). To observe EL, we have fabricated the EDLEDs with iongel. The devices show linear light emission from the interface by applying voltage.
Interestingly, the EL spectra show four different peaks, which is drastically different from PL
spectra of the interface. Furthermore, the intensities of these EL peaks strongly depend on bias
voltage. In the presentation, we will show the details of sample preparation and discusspossible origins of EL peaks in the present EDLEDs.

Fig.1 (a) Illustration and (b) optical and electroluminescence (EL) images of WSe2/MoSe2-based EDLED device.
Arrows indicate the observed EL. (c) EL and photoluminescence (PL) spectra of the EDLED device.
[1] Y. Kobayashi et al., Sci. Rep., 6, 31223 (2016). [2] J. Pu et al., Adv. Mater. , 29, 1606918 (2017).
[3] Y. Takaguchi et al., 55th FNTG symposium.
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 93 -

2P-8
Analytic properties of topological states in 2D SSH model
Daichi Obana1, Feng Liu1, Katsunori Wakabayashi1
1Department of Nanotechnology for Sustainable Energy, School of Science and Technology,
Kwansei Gakuin University, Gakuen 2-1, Sanda 669-1337, Japan

Topological edge states are robust to weak perturbations such as edge roughness andimpurities and provide robust electronic transport channel. In zigzag edges of graphene, edge
states appear at the energy near the Dirac point [1] and provide perfectly conducting channel[2]. The edge state can associated with topological phase called Zak phase [3].
Su-Schrieffer-Heeger (SSH) model, which has
been originally proposed for studying the electronic
states of polyacetylene, is a minimum theoreticalmodel to demonstrate the properties of Zak phase. In
this model, the topological phase transition isgoverned by tuning the ratio between intra-cell andinter-cell hopping γ’/γ. Particularly, transition of the
topological phase associated with Zak phasecorresponds to the emergence of edge states in finite
systems.
In this work we extend the concept of Zak phaseFig. 1 Lattice structure of 2D SSH model

to two-dimensional (2D) materials by employing 2D SSH model, where two types of hopping
γ and γ’ are periodically arranged on a square lattice as shown in Fig.1[4]. In our presentation,
we analytically solve the equations of motion of electrons for the two topologically distinct
phases of bulk and ribbon structures. We show the bulk-edge correspondence in 2D SSH modelin terms of Zak phase by using a theoretical approach of Ref. [1]. Our results will serve todesign new 2D materials which possess non-zero Zak phase and edge states which are necessary
for robust electronic transport.
[1] K. Wakabayashi, and S. Dutta, Solid State Comm., 152, 1420 (2012). K. Wakabayashi, K Sasaki, T
Nakanishi, T Enoki, Sci. Technol. Adv. Mater. 11, 054504 (2010).
[2] K. Wakabayashi, Y. Takane, M. Sigrist, Phys. Rev. Lett.99, 036601 (2007).
[3] P. Delplace, D. Ullmo and G. Montambaux , Phys. Rev. B, 84, 13 (2011).
[4] F. Liu, and K. Wakabayashi , Phys. Rev. Lett.,118, 076308 (2017).
Corresponding Author: K. Wakabayashi (E-mail: waka@kwansei.ac.jp)- 94 -

2P-9Synthesis of Single-Walled Carbon Nanotubes Coated with Thiol-Reactive
Gel via Emulsion Polymerization for Cancer Active Targeting○Yukiko Nagai1, Minoru Kawaguchi5, Jun Ohno5, Tsuyohiko Fujigaya1,2,3,4
Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744
3 Precursory
Motooka, Fukuoka 819-0395, Japan 2WPI I2CNER, Kyushu University
Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology
4Center for Molecular Systems, Kyushu University
5Center forAgency (JST)Regenerative Medicine, Fukuoka Dental College, Fukuoka, Japan.

1Single-walled carbon nanotubes (SWNTs) haveunique near-infrared absorption and photoemission
properties that are attractive for in vivo biologicalapplications such as photothermal cancer treatment
and bioimaging. Therefore, a smart functionalization
strategy to create biocompatible surfaces and to
introduce various ligands for SWNTs to active target
cancer cells without losing the unique opticalFig. 1. Graphical abstract of this research.
properties of the SWNTs is strongly desired.
In this study, we developed a SWNT/gel hybrid containing maleimide group, which reacts
with various thiol compounds through thiol-ene reactions (Fig. 1.). [1] In this hybrid, the method
called carbon nanotube micelle polymerization [2] was used to non-covalently modify thesurface of SWNTs with a cross-linked polymer gel layer. Since this method can form an
extremely stable gel layer on SWNTs; essential for in vivo biological applications.
The new vynyl monomer used to form the gel layer contained a maleimide group, which
was protected with furan in endo-form. The resulting hybrid was treated in water to induce
deprotection via retro Diels–Alder reaction and then functionalized with thiol compounds
through click reaction. It was revealed that the endo-form underwent clear deprotection byheating and functionalization with thiol compounds in waterat room temperature, while their exo-isomer resulted in thehydrolysis upon the deprotection. To synthesize the
SWNT/gel hybrid, carbon nanotube micelle polymerization
was carried out in the presence of PEG methacrylate as a comonomer. After the deprotection of the hybrid andsubsequent reaction with an antibody, the resulting hybrid
enabled active cancer cell targeting in vitro (Fig. 2.),indicating the successful functionalization of the hybrid withthiol compounds via thiol-ene reaction. Based on the present Fig. 2. G-band Raman imaging of
conjugated the hybrid (a) withresults, we propose that the SWNT/gel hybrid can be used as cellsand (b) without antibody.
a “platform” for various antibody functionalization.
The scale bar is 100 µm.
[1] Y. Nagai and T. Fujigaya et al., J. Am. Chem. Soc. 2018, 140, 8544.
[2] T. Fujigaya et al., RSC. Adv. 2014, 4, 6318.
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842, E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 95 -

2P-10Synthesis of [C60]fullerene nanowhisker-cadmium selenide nanoparticle
composites and photocatalytic degradation of methylene blue
○Jeong Won Ko 1, Jeong Hoon Park 2,Weon Bae Ko 1,2,3
1
3

Nanomaterials Research Institute, 2Department of Convergence Science, Graduate School,
Department of Chemistry, Sahmyook University, 815, Hwarang-ro, Nowon-gu, Seoul 01795,
Republic of Korea

Cadmium oxide (CdO) solution was prepared by CdO, paraffin oil, oleic acid and heated at
160℃. Selenium (Se) solution was prepared by Se powder, paraffin oil and heated at 220℃.
CdO solution was swiftly injected into the Se solution. The mixture solution was heated at
220℃ for 30 min. The precipitate was collected by centrifugation and was dried into theoven at 100 ℃ for 5 h to obtain solid state cadmium selenide (CdSe) nanoparticles. The
CdSe nanoparticles solution was prepared by powdered CdSe nanoparticles dissolving into
the mixture solution of distilled water and methanol. [C60]Fullerene nanowhisker-CdSe
nanoparticle composites were prepared by liquid-liquid interfacial precipitation(LLIP) method
using C60-saturated toluene, the CdSe nanoparticles solution and isopropyl alcohol. The
product of [C60]fullerene nanowhisker-CdSe nanoparticle composites was characterized byln (C/C0)

X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and transmission
electron microscopy. Photocatalytic activity of [C60]fullerene nanowhisker-CdSe nanoparticle
composites through degradation of methylene blue under UV light at 254 nm was confirmed
by UV-vis spectroscopy.

0

20

40

60

80 100 120

Time (min)Fig.1 Kinetic Study for Photocatalytic Degradation of Methylene Blue with [C60]Fullerene Nanowhisker- CdSe
Nanoparticle Composites at 254 nm[1] N. A. Hamiziet al. Mater. Chem. Phys. 124, 395 (2010).
[2] K. Miyazawa et al. Surf. Eng. doi.org/10.1080/02670844.2017.1396779 (2017).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318,
E-mail: kowb@syu.ac.kr- 96 -

2P-11
Photoreactions of Sc3N@Ih-C80 and Lu3N@Ih-C80 with Disilirane:
Characterization of Labile 1,2-Adducts○Shinji Kanzawa1, Fumiaki Ozeki1, Shinpei Fukazawa1, Masahiro Kako*,1,
Kumiko Sato2, Michio Yamada3, Yutaka Maeda3,
Makoto Furukawa4, Takeshi Akasaka*,2,3,4,5
1

Department of Engineering Science, The University of Electro-Communications,
Chofu 182-8585, Japan
2
TARA Center, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan3
Department of Chemistry, Tokyo Gakugei University, Tokyo 184-8501, Japan
4
Foundation for Advancement of International Science, Tsukuba, Ibaraki 305-0821,
Japan
5
School of Materials Science and Engineering, Huazhong University of Science andTechnology, Wuhan, Hubei 430074, P. R. China
Endohedral metallofullerenes (EMFs) have acquired a lot of interest because of
their fascinating structural and electronic properties. Exohedral functionalization has
been extensively explored to broaden their range of potential applications in molecularelectronics, nanomaterial science, and biochemistry [1]. In our ongoing study offullerene chemistry,[1] disiliranes (1,2-disilacyclopropanes) have been employed asversatile silylating reagents for empty fullerenes and EMFs [1]. Previously, we reported
that the photoreaction of Sc3N@Ih-C80 with disilirane 1 afforded the corresponding 1,4and 1,2-adduct (2 and 3, respectively) [2]. Although 2 was characterized using
spectroscopic, electrochemical, and crystallographic studies, the properties of 3 have notbeen investigated because its isolation was not accomplished [2]. In addition, it was also
reported that Lu3N@Ih-C80 also reacted photochemically with disiliranes to produce thecorresponding 1,4-adduct 4 and less stable intermediates during the photoreactions.
Unfortunately, further structural analyses of the intermediates were unsuccessful due totheir facile isomerization to 4 [3,4]. These results prompted us to characterize 3 derived
from Sc3N@Ih-C80 with disiliranes because the properties of fullerene derivatives
depend on the regiochemistry of exohedral functionalization. We now report the detailsof the photoreactions of M3N@Ih-C80 (M = Sc, Lu) describing the characterization of
1,2-adducts 3 and 5 [5]. The experimentally observed isomerization of the 1,2-adduct tothe 1,4-adduct was rationalized based on the relative energies of the optimized
structures by theoretical calculations. The electrochemical studies indicated theelectron-donating effects of the silyl groups in these products in comparison with thoseof the related compounds.
Scheme 1.

Mes
Mes
Mes

Si

Si

Mes

Mes

Si

Si

Mes

Mes
Mes

Mes
Mes
Mes

Si

Si

Mes

1
Mes =

M3N@Ih-C80(M = Sc, Lu)

2 [Sc3N@Ih-C80]
4 [Lu3N@Ih-C80]

3 [Sc3N@Ih-C80]
5 [Lu3N@Ih-C80](Partial structures of 2-5. The parent EMFs are shown in brackets, respectively.)[1] M. Yamada et al. Bull. Chem. Soc. Jpn. 87, 1289–1314 (2014). [2] Y. Iiduka et al. J. Am. Chem. Soc.
128, 9919–9925 (2006). [3] K. Sato et al. Org. Lett. 14, 5908–5911 (2012). [4] M. Kako, et al. Chem. Eur.
J. 21, 16411–16420 (2015). [5] M. Kako, et al. Heteroatom Chem. e21477 (2018).
Corresponding Author: Masahiro Kako Tel: +81-42-442-5570. E-mail: kako@e-one.uec.ac.jp- 97 -

2P-12
Near infrared emission of dimetallofullerene anions
encapsulating Nd or Er○Shinya Nishimoto1, Takaaki Hirayama1, Hiroyuki Nishidome2, Yasumitsu Miyata2,
Kazuhiro Yanagi2, Koichi Kikuchi1, Yohji Achiba1, Takeshi Kodama1
1

Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Er-metallofullerenes[1] and Tm-metallofullerenes[2] have long been the only ones thatexhibit the emission from the encapsulated metal ion. In 2006, we reported the emission
around 1 µm from the encapsulated Nd ion for Nd-metallofullerenes, but it was very weak[3].
Last year, we reported the synthesis, isolation, and emission of novel Nd-dimetallofullerenes,(Nd2@C78(D3h))- and (Nd2@C80(Ih))-, which are stable only as an anion form. In addition, themixture of homo-, and hetero-dimetallofullerenes for (MM’@C78(D3h))- or (MM’@C80(Ih))(M, M’=Nd, La) were also investigated[4]. But, unfortunately, there is an uncertainty for theassignment of the emission spectra for Nd-dimetallofullerenes. Therefore, in this work, novel
Er-dimetallofullerenes, (Er2@Cn)- (n=78, 80), which are also stable only as anion form, were
produced, isolated, and the emission spectra of them were measured. Then, the assignment of
the emission spectra of Nd-dimetallofullerenes was reconsidered by taking into account of theemission spectra of Er-dimetallofullerenes. Moreover, hetero-dimetallofullerenes, NdY@Cn
and ErY@Cn, were also studied.
Soot containing metallofullerenes was produced by direct-current (60 A) arc discharge of
M/C composite rods (M:C=2:98) under a 500 Torr He atmosphere. The raw soot was
extracted with a mixed solvent of triethylamine and acetone. By multi-step ion pairchromatography, (Er2@Cn)- (n=78, 80), (NdYC80)- were isolated and (MM’C78)- (M, M’= Nd,
Y), (MM’Cn)- (M, M’= Er, Y; n=78, 80) were obtained as a mixture. The structures of these
metallofullerenes were determined by UV-vis-NIR absorption spectra.
Emission spectra of (M2@C80(Ih))- (M=Nd, Er, Y)
are shown in Fig.1. The broad peak around 900 nm
with asterisk was observed for all the samples. Then,tentatively, the peak was assigned to contaminatedimpurities. For (Nd2@C80(Ih))-, besides a broad peakaround 900 nm, very weak shoulders indicated byarrows can be seen around 1100 nm and 1250 nm.
For (Er2@C80(Ih))-, emission around 1550 nm
surrounded by a dotted line is clearly observed,
which is characteristic for Er3+. The emission spectra
Fig.1 Emission spectra of (M2@C80(Ih))of hetero-dimetallofullerenes will be discussed in the(M=Nd, Er, Y).
presentation.
[1] X. Ding, et al. Chem. Phys. Lett. 269, 72 (1997).
[2] Z. Wang, et al. ACS Nano 10, 4282 (2016).
[3] N. Murata, et al. The 30th Commemorative Fullerenes-Nanotubes General Symposium 106 (2006).
[4] S. Nishimoto, et al. The 54th Fullerenes-Nanotubes-Graphene General Symposium 47 (2018).
Corresponding Author: Takeshi Kodama
Tel: +81-42-677-2530, Fax: +81-42-677-2525
E-mail: kodama-takeshi@tmu.ac.jp- 98 -

2P-13
Analysis of Self-Absorption Effect on Resonance Raman Spectroscopy ofSingle-Chirality Single-Wall Carbon Nanotubes○Xiaojun Wei1,2, Shilong Li1,2, Dehua Yang1,2, Jiaming Cui1,2, Huaping Liu1,2, Weiya Zhou1,2,
Sishen Xie1,2, Takeshi Tanaka3, and Hiromichi Kataura3
1

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences, Beijing 100190, China
2
Beijing Key Laboratory for Advanced Functional Materials and Structure Research,
Beijing 100190, China
3
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan
Raman spectroscopy is one of the most promising characterization techniques, which has
been widely applied to assign the chiral indices (n,m) of single-wall carbon nanotubes(SWCNTs) and evaluate the relative abundance of each (n,m) species. However, theself-absorption effect cannot be ignored when the optical absorbance at the wavelength of theRaman scattering light is significantly large, which may lead to an unexpectedunderestimation in intrinsic spectral intensity because the experimentally observed intensity
does not correspond to the intrinsic intensity [1]. In this study, we systematically analyzed theinfluence of the self-absorption effect for the resonance Raman spectra measurement ofvarious chirality-sorted SWCNTs by modifying the focal depth in the confocal micro-Raman
measurement and the sample concentration.
Figure 1a shows the observed G+-band intensities of (8,3) solutions with different SWCNT
concentrations measured at various focal depths lay inside the front surface. When the laser
was focused at front surface (corresponding to 0 mm), the G+-band intensity was observed tolinearly increase with increasing the SWCNT concentration. By contrast, when the laser was
focused inside the solution, the G+-band intensity became to nonlinearly increase withincreasing the SWCNT concentration. Furthermore, the G+-band intensity even dropped asboth of the focal depth and the SWCNT concentration were large enough (corresponding to 8mm). This observed Raman intensity dependence on the focal depth and the SWCNT
concentration could be explainedby the self-absorption effect ofRaman scattering light because allobserved Raman intensities were
well fitted by Lambert-Beer law.
Based on the experimental
measurement shown in Figure 1a,
we can simulate the observed
Raman intensity as a function of
the focal depth and the SWCNT Figure 1. (a) Observed G+-band intensities of (8,3) solutions withconcentration (Figure 1b), which different SWCNT concentrations (denoted as their E22 absorbance)
is very important for the measured at various focal depths at an excitation wavelength ofquantitative evaluation of Raman 633 nm. (b) Simulation of the observed G+-band intensity as aintensity of each (n,m) species, function of the focal depth and the SWCNT concentration.
even their abundances.
This work was supported by National Key R&D program of China (Grant No. 2018YFA0208402), NSFC
(Grant No. 51472264, 11634014, 51820105002, 51872320, 51561022), and KAKENHI No. 25220602.
Corresponding Author: X. Wei; H. Kataura
E-mail: weixiaojun@iphy.ac.cn; h-kataura@aist.go.jp- 99 -

2P-14
Subdiffraction imaging of carbon nanotubes using nonlinear excitonic
processes○Keigo Otsuka 1,2, Akihiro Ishii 1,2, Yuichiro K. Kato 1,21

Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama
351-0198, Japan
2
Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama 351-0198, Japan

Single-walled carbon nanotubes can be promising bioimaging probes owing to theirnear-infrared fluorescence, which show deep penetration and low scattering in living bodies[1]. Fluorescence intensity of carbon nanotubes nonlinearly depends on excitation power
because either one of two excitons go through an annihilation process upon collision. In
one-dimensional system of nanotubes, the annihilation process shows particularly strong
dependence on exciton density [2] in comparison to two- or three-dimensional materials,
leaving a chance for improving the spatial resolution in far-field imaging.
Here we demonstrate subdiffraction imaging of air-suspended carbon nanotubess by
extracting exciton-exciton annihilation rates from two fluorescence images which are
obtained with different excitation powers. As shown in Fig. 1(a), full width at half maximumof annihilation rate profiles (circles) is smaller than that of raw fluorescence (open squares).
This is because the frequency of exciton interactions in nanotubes shows a superlinear
dependence on its generation rate (Fig. 1(b)). Figure 1(c) shows a fluorescence image of two
adjacent nanotubes, and these can be more clearly distinguished in an image of the extracted
annihilation rates (Fig. 1(d)).
Annihilation

(b)

0.7
0.5

0.3
100
101
102
Excitation power (μW)

g0τ

10

(c)

10−2 10−1 100 101 102 103
4

103
102

102

simulation
experiment

101

100

10−1

100

10−1

101
ΓEEAτ

FWHM (μm)

0.9

Raw PL

Annihilation rate (a.u.)

(a)

(d)

10−2
10−2 10−1 100 101 102
Excitation power (μW)

Figure 1 (a) Width of fluorescence intensity profiles and extracted annihilation rate profiles of a nanotube.
Reference power for the extraction is fixed at 0.05 μW. (b) Excitation power dependence of exciton-exciton
annihilation rates from experiments and Monte Carlo simulations. (c,d) 2D images of two nanotubes forfluorescence intensity (c) and the extracted annihilation rate (d). Scale bars: 500 nm.

Work supported by JSPS (KAKENHI JP16H05962) and MEXT (Nanotechnology Platform). We
thank the Advanced Manufacturing Support Team at RIKEN for technical assistance.
[1] G. Hong, S. Diao, A.L. Antaris, and H. Dai, Chem. Rev. 115, 10816 (2015).
[2] A. Ishii, M. Yoshida, and Y.K. Kato, Phys. Rev. B 91, 125427 (2015).
Corresponding Author: Yuichiro K. Kato
Tel: +81-48-462-1449, Web: http://katogroup.riken.jp/, E-mail: yuichiro.kato@riken.jp- 100 -

2P-15Enhanced in-plane thermal conductivity of single-walled carbon
nanotube/boron nitride nanotube composite films○Pengyingkai Wang1, Yongjia Zheng1, Taiki Inoue1, Rong Xiang1, Makoto Watanabe1,
Shohei Chiashi1, Shigeo Maruyama1, 2

1 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2 Energy Nanoengineering Lab, National Institute of Advanced Industrial Science and Technology(AIST), Ibaraki 305-8564, Japan

Single-walled carbon nanotube (SWCNT) films exhibit promising potential as thermalinterface material due to the superior thermal conductivity [1] and the outstanding mechanicalproperty. However, it is still not yet successful for the SWCNT films to inherit the excellent
thermal conductivity of ideal SWCNTs due to the limited thermal transport channels andrelatively low oxidation temperature (450500 ℃) [2,3]. Meanwhile, boron nitride nanotubes(BNNTs) possess high thermal conductivity comparable to SWCNTs and higher thermal
stability in air than SWCNTs. A study has realized a 90% increase in thermal conductivity byencapsulating multi-walled CNT array with BNNTs [4].
In this work, we synthesized coaxial SWCNT-BNNT composite films by CVD method [5]and investigated thermal conductivity of them. SWCNT films were prepared by the aerosol
chemical vapor deposition synthesis method. With the SWCNT films as templates, we
synthesized BN layers for 3 hours using ammonia borane as precursors. FTIR spectra of the
SWCNT films before and after coating with BNNTs are shown in Figure 1. In-plane thermal
conductivity of this composite was studied by a contact free steady-state IR method [6] asschematically shown in Figure 2. We observed a thermal conductivity enhancement of SWCNT
films (from ~68.1 W/m K to ~ 91.3 W/m K, ~ 30% increase) by further growing outer BNNTs(~3 walls). The characterization of the sample with SEM and TEM and the detailed experiment
process will be presented.

Fig. 1. Transmittance measured by FTIR of theFig. 2. A schematic of the thermal conductivity

SWCNT film and SWCNT-BNNT film.

measurement setup.

[1] J. Hone et al., Appl. Phys. Lett, 77, 666 (2000). [2] A. M. Marconnet et al., Rev. Mod. Phys., 85, 3 (2013).
[3] Y Chen et al., Appl. Phys. Lett., 85, 2430 (2004) [4] J. Lin et al., ACS Appl. Mater. Interfaces, 9, 14555 (2017).
[5] R. Xiang et al., arXiv :1807.06154 . [6] Y. Feng et al., Jpn. J. Appl. Phys. 57 , 075101 (2018).
Corresponding Author: S. Maruyama, Tel: +81-3-5841-6421, Fax: +81-3-5841-6421,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 101 -

2P-16Structure dependence of electron-acoustic-like-phonon interaction in
individually suspended single-walled carbon nanotubes○Takumi Inaba, Yoshikazu Homma
Department of Physics, Tokyo University of Science, Tokyo162-8601, Japan
Evaluations of electron-phonon coupling in well-defined nanostructure is necessary whenapplications based on the vibration of materials move into the quantum regime. Raman
scattering, where changes in polarization caused by lattice oscillation are probed by light, isan excellent means to analyze electron-phonon interaction. In this study, the Raman intensities
of individually suspended single-walled carbon nanotubes (SWCNTs) were analyzed in orderto evaluate variations in electron-phonon coupling in response to changes in the arrangementof carbon atoms (i.e., chirality).
We evaluated intensities of four Raman peaks generated from individually suspended
SWCNTs, the radial breathing mode (RBM), the intermediate frequency mode (IFM), theD-mode, and the G-mode. The chirality of SWCNTs were determined fromphotoluminescence spectroscopy. Here, the IFM is the Raman peak found in the range of
400-600 cm-1. Recent reports showed that the origin of the IFM is the phonon modes which
was acoustic in graphene but turns to optical in tubular structure of SWCNTs [1]. Furthermore,
the IFM has non zero momentum. Thus, the IFM has similar property as the RBM and the
D-mode. As results, we found the relation between intensities of four Raman peak as.
Although (12,5) nanotubes is unlikely satisfy the equation as shown in Fig. 1, the equation
holds for most SWCNTs we assessed. The qualitative explanation of the relation was given
with referencing the prior theoretical study [2]. From the qualitative analysis, we proposedthat the D-mode belongs to the longitudinal optical branch in semiconducting SWCNTs.

[1] A. Vierck, et al., Carbon 117, 360 (2017).
[2] J. Jiang, et al., Phys. Rev. B 72, 235408 (2005).
Corresponding Author: T. Inaba
E-mail: takumi.inaba.63@rs.tus.ac.jp

Figure 1 Chiral angle dependence of Raman intensity
ratios IIFM/ID and IRBM/IG.

- 102 -

2P-17
Free-standing mode triboelectric generators with carbon nanotube thin film
○Masahiro Matsunaga1, Jun Hirotani2, Shigeru Kishimoto2, Yutaka Ohno2,3
Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603,
Japan
1

With rapid growth of the field of the internet of things, energy harvesting devices have been
attracting attention for an alternative way of battery to drive electronics. Recently, triboelectric
generator (TEG), which is a kind of mechanical energy harvesters, is attracting interests forhighly-efficient energy harvester [1]. The working mechanism of the TEG is a combination ofcontact electrification and electrostatic induction. The TEG has a potential for wearable
electronics using stretchable materials such as carbon nanotube (CNT) thin film [2]. In previous
study, we reported transparent and stretchable TEGs toward wearable energy harvester, using a
CNT thin film as an electrode [3]. However, an external ground electrode was required toconfigure a closed circuit loop, and restricted the stretchability of the TEG. In this study, toremove the external ground electrode, we fabricated the TEG which was consisted of twoelectrodes with different surface modification of triboelectric layers.
The TEG was composed of a carbon nanotube thin film sandwiched with
polydimethylsiloxane (PDMS) layers. After spin-coating PDMS onto a plastic substrate, theCNT transparent electrodes were patterned on the PDMS surface by the spray coating of CNT
ink (Meijo Nano Carbon, eDIPS ink) with a shadow mask as shown in Fig. 1. The top PDMS
was spin-coated to cover the CNT electrode. To form the different triboelectric surface, we thenapplied CF4 plasma to modify the PDMS surface on one of the electrodes. The TEG was able
to drive a blue light-emitting diode embedded between the electrodes by tapping with a nitrileglove worn hand.
Acknowledgment: This work was supported by JST/CREST (JPMJCR16Q2).
[1] Z. L. Wang, Mater. Today 20, 74 (2017).
[2] N. Fukaya et al., ACS Nano 8, 3285 (2014).
[3] M. Matsunaga et al., The 55th Fullerenes-Nanotubes-Graphene General Symposium, 1P-8 (2018).

Fig. 1 Schematic and fabricated triboelectric generator.
Corresponding Author: Y. Ohno
Tel & Fax: +81-52-789-5387,
E-mail: yohno@nagoya-u.jp- 103 -

2P-18
Polyaromatic Anthracene Clencher on Single-Walled Carbon Nanotubes as
Cathodes in Perovskite Solar Cells○Shuhei Okawa1, Il Jeon1, Esko I. Kauppinen2, Yutaka Matsuo1, Shigeo Maruyama1,3
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2

Department of Applied Physics, Aalto University School of Science, FI-00076 Aalto, Finland

3

Energy Nano Engineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8564, Japan

Single-walled carbon nanotubes (SWNTs) possess excellent electrical conductivity and opticaltransparency, qualifying them for an alternative to transparent conductors in optoelectronic devices.
SWNTs have been frequently used as an anode (hole-conductor) in perovskite solar cells (PSCs) [1]since SWNTs are naturally a p-type conductor in air. On the other hand, due to the low power conversion
efficiency (PCE) arising from the challenging nature of its energy alignment, SWNT cathode has notbeen explored extensively. Previously, Jeon et al. reported a PCE of 10.5% from an inverted-type PSC
in which a SWNT cathode drenched in PC61BM was used as the top electrode [2]. This demonstrated
that the SWNT films can be used as a cathode and produce a PCE comparable to the anode counterpart.
In this work, we explored different materials to PC61BM to improve the SWNT cathode properties in
PSCs from the optoelectronic perspective. After a through interface engineering of SWNTs cathodes,
we achieved a PCE of 11.1% with SWNT film top electrode-based PSCs by incorporating polyaromatic
anthracene ammonium (AA) molecules [3] which clenched onto SWNTs film [4] to enhance its charge
selectivity. In order to protect perovskite layer from AA and ethanol, perovskite crystal was fully covered
with PC61BM (Fig. 1 and 2). The resulting PSCs exhibited much higher PCE while being semitransparent owing to AA firmly clenching onto the SWNTs and possessing a better energy alignment
than PC61BM.

Fig. 2 Molecular structure of AA.

Fig. 1 Structure of the device.
[1] Z. Li et al., ACS Nano 2014, 8, 6797.
[2] I. Jeon et al., J. Phys. Chem. C 2017, 121, 25743.
[3] I. Jeon et al., ACS Appl. Mater. Interfaces 2016, 8, 29866.
[4] A. Kaskela et al., Nano Lett. 2010, 10, 4349.

Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421,
Fax: +81-3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 104 -

2P-19Research of Fracture Behavior CNT/HDPE Composites via Melt Blending○Koichi Utsugi, Mitsuhiro Takeda, Manami Mori, Riku Ota, Shu Kozaki, Masaru Sekido
Department of Materials and Environmental Engineering, National Institute of Technology,
Sendai College, Natori 981-1239, Japan
CNTs are considered as the ideal reinforcement fillers for the nanocomposite materials due totheir outstanding mechanical properties, tensile strength about 100 times that than steel, lightweight, and low density.㻌Previously we have prepared CNT/high density polyethylene (HDPE)
composites by Melt Blending and measured tensile strength.㻌As a result, the tensile strength
increased as the weight ratio of CNTs was increased while the fracture strain decreased withaddition of CNTs [1]. In this work we investigated the reason why the fracture strain of
CNT/HDPE composites was decreased by observing the crystal state of HDPE and thedispersion of CNT.
The crystal state of HDPE was studied using a polarized optical microscope and the dispersionof CNTs was studied by a scanning electron microscope (SEM).
The difference of fracture surfaces depending on the different weight ratio of CNT/HDPE wasobserved by SEM (Fig. 1). Aggregation of CNTs was not observed from the composite with aweight ratio of 5/100. It is suggested that the cause of the decrease in fracture strain is not due
to peeling of the interface between the CNT and the base material.

Fig. 1 SEM images of Fracture surface for CNT/HDPE composites. (a, b) are SWNT/HDPE composites. (a) weightratio is 3/100. (b) weight ratio is 5/100. (c, d) are MWNT/HDPE composites. (c) weight ratio is 3:100. (d) weightratio is 5:100.
[1] Atsushi Onodera et al., The 54th Fullerenes-Nanotubes-Graphene General Symposium, 1P-11(2018)
Corresponding Author: Koichi Utsugi
Tel: +81-22-381-0329, Fax: +81-22-381-0329
E-mail: s1400309@sendai-nct.jp- 105 -

2P-20Growth Mechanism of (6,5) Carbon Nanotube:
Edge Structures and their Regioselectivities◦ Tomohiro Nishikawa1,2 , Tohru Sato1,2,3 , Naoki Haruta2 , Takeshi Kodama4 , Yohji Achiba4
1

2

Fukui Institute for Fundamental Chemistry, Kyoto University,
Department of Molecular Engineering, Graduate School of Engineering,Kyoto University,
3
Unit of Elements Strategy Initiative for Catalysts & Batteries, Kyoto University,
4
Department of Chemistry, Graduate School of Science, Tokyo Metropolitan University,

The growth mechanism of single-walled carbon nanotubes by the laser ablation method has
been proposed[1]. The proposed mechanism is the followings: (1) precursor caps are produced
in a gas phase; (2) the caps adsorb on metal catalyst; (3) nanotubes grow by C2 addition to
the edges of the caps. Various structures are possible in the precursor caps. However, theregioselectivities of C2 addition to the precursor caps have not been discussed in detail.
Vibronic Coupling Density (VCD) analysis is eﬀective as a reactivity index for regioselectivities of fullerene and graphene, which are diﬃcult to be predicted based on the conventional
frontier orbital theory [2-4]. In this work, we discuss the growth mechanism of (6,5) tube byinvestigating all the possible edge structures in (6,5) tube and their regioselectivities of C2
addition to the edges based on the VCD analysis.
On the basis of the proposed mechanism, we made the following assumptions: (a) nanotubes grow by cycloaddition of C2 ; (b) nanotubes are in anionic states generated by a chargetransfer from the catalyst; (c) C109 H11 isomers can be regarded as a precursor nanotube withan enough length for the electronic structures of the precursors not to depend on. The extended Hückel and DFT calculations were performed for the C109 H11 isomers which are thecapped (6,5) precursor tube with all the possible edge structures. As a result, there exist
recurrent paths when the precursor tube is an acceptor in the growth reaction. On the other
hand, if the precursor tube is a donor, such a path does not exist.
Based on the obtained paths, the reactive regions of the C2 cycloaddition from C109 H11
to C129 H11 are identiﬁed using the VCD analysis. All the analyses indicate reactive regionsof (6,5) tubes for C2 cycloadditions to elucidate the one-layer growth path of (6,5) tube.

[1] Y.Achiba , Mol. Sci. 6, A0055 (2012). [2] T. Sato et al., J. Phys. Chem. A 112, 758 (2008). [3] T. Satoet al., Chem. Phys. Lett. 531, 257 (2012). [4] N. Haruta et al., Tetrahedron Lett. 56, 590 (2015).
Corresponding Author: Tohru Sato
Fukui Institute for Fundamental Chemistry, Kyoto University,
Nishihiraki-cho 34-4, Sakyo-ku, Kyoto 606-8103, Japan
Tel: +81-75-711-7849
E-mail: tsato@scl.kyoto-u.ac.jp- 106 -

2P-21
Growth of vertically-aligned single-walled carbon nanotubes
having small diameters from Ir catalysts: Effect of catalyst amount○Takuya Okada1, Kamal P Sharma1,2, Tomoko Suzuki2, Takahiro Saida1,2, Shigeya Naritsuka3
Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
Nanomaterials Research Center, Meijo University, Japan3
Department of Materials Science and Engineering, Meijo University, Japan
2

Single-walled carbon nanotubes (SWCNTs) have been anticipated for application in a lot of future
nanodevices. To fabricate SWCNT devices, it is important to grow high-density semiconducting
SWCNTs having small diameters, because the band gap of an SWCNT is in inversely proportional toits diameter. Previously, we reported that small-diameter SWCNTs were grown from Ir catalysts [1].
However, the effect of the amount of Ir catalysts for SWCNT growth has not been investigated. In thisstudy, we carried out SWCNT growth using Ir catalysts by alcohol catalytic chemical vapor deposition(ACCVD) method to clarify the relationship between the amount of catalysts and the property of grown
SWCNTs.

Fig. 1 shows Raman spectra of SWCNTs grown for 60 min fromvarious amount of Ir catalysts under ethanol pressure of 110-1 Pa.
Irrespective of the amount of Ir catalysts, both G band and radial
breathing mode (RBM) peaks were observed, indicating that SWCNTs
were grown. By increasing the deposition amount of Ir catalysts, RBM
peaks shifted to the lower wavenumbers, indicating that the SWCNT
diameters increased. Fig. 2 shows SEM images of the samples in Fig.
1. High-density vertically-aligned SWCNTs were observed for all thesamples, whose lengths were about 2 m. This indicates that controlof the amount of Ir catalysts is important to obtain small-diameter
SWCNTs. We will discuss the electronic type of grown SWCNTs.

Intensity [a. u.]

Using Ir catalysts, SWCNTs were grown on SiO2/Si substrates by ACCVD in an ultra-high vacuum(UHV) chamber, a type of cold-wall CVD equipment. Ir catalysts were deposited using arc plasma
deposition and the amount of deposition was controlled by the number of applied pulses required fordischarge. The growth temperature was 800°C. The grown SWCNTs were characterized by FE-SEM,
Raman spectroscopy, PL, and TEM.
exc.671 nm

5pulse10pulse15pulse100 200 300 400-1
Raman Shift [cm ]Fig.1 Raman spectra

This work was supported in part by Private
University Research Branding Project from the Ministryof Education, Culture, Sports, Science and Technology(MEXT), Japan. Part of this work was conducted at theInstitute for Molecular Science (IMS), supported by the“Nanotechnology Platform” of the MEXT, Japan.
[1] T. Okada et al. 55th FNTG Symposium 3P-22.
Corresponding Author: T. Maruyama
Phone: 81-52-838-2386, Fax: 81-52-832-1179
E-mail: takamaru@meijo-u.ac.jp

Fig.2 SEM image- 107 -

3pulse2P-22The effect of noble metals addition into iron catalyst on the synthesis ofvertically aligned single-walled carbon nanotube without reducing gas○Shunsuke Sakurai, Jinping He, Kenji Hata, Don N. Futaba
CNT Application Center, National Institute of Advanced Industrial Science and Technology(AIST), 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
In an efficient synthesis of single-walled carbon nanotube (SWNT) possessing
vertically-aligned structure (forest) by chemical vapor deposition (CVD) method, both theoxidizing (such as water) and the reducing gases (such as hydrogen (H2)) are well recognized
to play important roles [1-3]. Especially, importance of H2 during pre-annealing process ofthin metal film (such as iron) to prepare catalyst nanoparticle has been frequently addressed[2]. Thus, the impact of oxidation status of metal catalyst has also attracted the attention of theresearcher in this field [3].
Here, we report an unexpected effect of the addition of noble metals (NM = iridium,rhodium, and platinum) into iron catalyst even with a small fraction (<0.5 at%) on the SWNT
synthesis efficiency during the process without any reducing gases. Specifically, composite
film containing iron with/without NM were deposited by spin-coating, and then pre-annealedin helium atmosphere, and finally followed by an exposure into carbon source and water. As aresult, a highly-efficient synthesis of tall (>600 μm) SWNT forests was achieved by NM
addition though only poor growth was obtained in the case without NM. X-ray photoelectron
spectroscopy (XPS) analyses on the catalyst films after annealing helium ambient suggested
that the existence of NM assisted the formation of metallic status of iron even without any
reducing gas. This work was supported by JSPS KAKENHI Grant Number JP17K14090.
(b)

Substrate

SWNT forest(a)

200 μmFig. 1 (a) SEM images of CNT forest from iron/rhodium catalyst (left) and iron catalyst. (b) XPS spectra(Fe 2p region) of iron/iridium (continuous line) and iron (dotted line) catalyst.
[1] K. Hata, D. N. Futaba, K. Mizuno, T. Namai, M. Yumura, and S. Iijima, Science 306, 1362 (2004).
[2] S. Sakurai, H. Nishino, D. N. Futaba, S. Yasuda, T. Yamada, A. Maigne, Y. Matsuo, E. Nakamura, M.
Yumura, and K. Hata, J. Am. Chem. Soc. 134, 2148 (2012).
[3] Y. Qian, H. An, T. Inoue, S. Chiashi, R. Xiang, and S. Maruyama, Phys. Status Solidi B 255, 1800187(2018).
Corresponding Author: S. Sakurai
Tel: +81-29-861-6205, Fax: +81-29-861-4851,
E-mail: shunsuke-sakurai@aist.go.jp- 108 -

2P-23
Relationship between Catalysts andDiameter of Single-Walled Carbon Nanotubes○Akio Nakano1
1

Yokohama Science Frontier High School,6 Ono-cho, Tsurumi-ku, Yokohama 230-0046, Japan

Single-walled carbon nanotubes (SWCNTs) are expected to be applied to various industrial
fields. The SWCNTs can be produced by arc discharge using carbon electrodes containing Ni
or Y2O3 as a catalyst under low-pressure helium circumstance. In this study, the effect of molar
ratio of Ni : Y2O3 (Table 1) contained in a carbon cathode on a diameter of SWCNTs wasconsidered. The diameters (nm) of SWCNTs were calculated with the wavenumbers of Radial
Breathing Mode (RBM, peaks at 160-300cm-1) on Raman spectra, by formula [1] as below,
Dt = 248 / ω (Dt: diameter of tubes, ω: wavenumbers of RBM)
Table 1. The ratio of catalysts
ratio I
ratio II
Molar ratio (Ni : Y2O3)
2:1
1:1
Ni (g / 2.00g Carbon)
0.05870.0294
Y2O3 (g / 2.00g Carbon)
0.11290.1129ratio III
1:2
0.02940.2258

ratio Ⅳ
4:1
0.0587
0.0565

Peaks of RBM at around 165cm-1 were mainly observed with small peaks on the larger sideof wavenumbers. These peaks appeared at five positions on the Raman spectra, which were
calculated in approximately 1.50, 1.45, 1.36, 1.32 and 1.09nm, as given on Table 2. With ratio
I, only a single RBM peak was appeared, and Dt was in the largest region, 1.50nm. The double
peaks were obtained with ratio II or III. The triple peaks were observed only with ratio III.
However, no RBM peak were observed with ratioⅣ
Table 2. Diameter (nm) of SWCNTs produced under ratio I-III of catalysts
Dt 1.50 nm
Dt 1.45 nm
Dt 1.36 nm
Dt 1.32 nm
Dt 1.09 nm
I(s)
1.486
II(s)
1.519
II(d)
1.502
II(d)
1.362
III(s)
1.501
III(s)
1.445
III(d)
1.467
III(d)
1.323
III(t)
1.448
III(t)
1.317
III(t)
1.090(s):RBM with single peak (d):with double peaks (t):with triple peaks

Double or triple peaks of RBM indicate the formations of SWCNTs with small diameters.
The decrease in the diameter of the SWCNTs is related to the increase in the ratio of Y2O3. As
a result, it is obvious that the diameter of the SWCNTs is related to the ratio of the catalysts of
Ni : Y2O3 and that SWCNTs are not produced when the ratio of catalysts is too biased.
[1] R.Saito, et al., Phys.Rev.B, 61, 2981 (2000).
Corresponding Author: A. Nakano
Tel: +81-45-511-3654, Fax: +81-45-511-3644- 109 -

2P-24Structural Analysis of Carbon Nanobrushes and Carbon Nanohorn
Aggregates using Small-Angle X-Ray Scattering Method○Ryota Yuge, Kimiyoshi Fukatsu, Takashi Miyazaki
System Platform Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
Fibrous aggregates of single-walled carbon nanohorns (CNHs), named as carbon
nanobrushes (CNBs), were recently discovered [1-2]. Each carbon nanohorn radially gathered
and were one-dimensionally connected in the range of several micrometers. The CNBs are
drawing attention as electrode materials for various devices such as nanocarbon-polymer
actuators, electric double layer capacitors, and fuel cells since they show high electricalconductivity, high dispersibility in solutions, and large specific surface areas [3]. So for, themorphology of the CNBs and CNHs in dispersion solutions has been well evaluated although
local structural analysis such as TEM and SEM was demonstrated. In this study, we tried thestructural analysis of CNBs and CNHs using small-angle X-ray scattering (SAXS) and ultra
SAXS (USAXS) method.
CNBs was prepared by CO2 laser ablation on catalyst-containing carbon targets at room
temperature under ambient pressure. The CO2 laser was operated at the power of 3.2 kW inthe continuous-wave mode. The target of 30 mm in diameter and 50 mm in length was rotated
at 1 rpm for 30 second during the laser ablation. The gas pressure in the growth chamber was
kept at 700-800 Torr by controlling the evacuation rate while the buffer gas of nitrogen was
kept at a flow rate of 10 L/min. The carbon target and iron-containing carbon target were usedin our experiments. The SAXS and USAXS measurements for CNBs and CNHs mixture andCNHs in ethanol solutions were performed at the beam line BL08B2 and BL24XU-A1 of thesynchrotron radiation facility SPring-8 (Hyogo, Japan). Their energies were 8 and 10 keV,
respectively. The measurements were carried out in the range of 10-3 - 10 nm-1 of wave
vectors Q.
From SAXS and USAXS results of CNHs, there were secondary aggregates of CNHs withseveral micro meters in ethanol solution. Therefore, we found that CNHs is not completely
mono-dispersed. The particle size of aggregate structure was estimated as 160 nm, which issimilar with results of SEM and TEM. The shape of CNHs was ellipsoid rather than sphericalstructure. Mean diameter of the individual CNH is estimated by 3.7 nm, which isapproximately equal to observation results of TEM. The morphology of CNBs will be
discussed in the presentation.
[1] R. Yuge et al. Adv. Mater. 28, 7174 (2016).
[2] R. Yuge et al. Carbon, 122, 665 (2017).
[3] R. Yuge et al. Carbon, 138, 379 (2018).
Corresponding Author: R. Yuge, Tel: +81-29-850-1566, Fax: +81-29-856-6137, E-mail: r-yuge@bk.jp.nec.com- 110 -

2P-25
Simulation of Defect Generation by Irradiation of
Platinum Particles on Graphite○Toshiki Sonoda 1, Takahiro Yamamoto 1,2
1

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
2
RIST, Tokyo University of Science, Tokyo 125-8585, Japan

A fuel cell is expected to apply to battery of vehicles because of high efficiency andenvironmentally friendly fuel. However, since a platinum nanoparticle used as catalyst of thefuel cell is a valuable and costly resource, it is desired to reduce the amount of platinum. As asolution to this problem, an Arc Plasma Deposition (APD) method has been proposed.
In the previous study, it was reported that the platinum nanoparticles deposited on graphiteby the APD method improves catalytic activity. As a reason of such an enhancing, it isconsidered that grain boundaries of graphite deform structures of the nanoparticles [1,2].
Furthermore, in another previous study, the adsorption energy of a platinum atom to graphenewith a point defect was calculated by the first principle calculation, showing the highest
adsorption energy when the platinum atom is located at the point defect [3]. From theseresults, defects formed on the graphite surface are considered to improve the catalytic
performance because such the defects may cause deformation of lattice constant andstrengthen the adsorption force between platinum nanoparticles and graphite surface.
However, it is not clear how and what defects are generated by the APD method.
In this study, we simulate the situation of the APD method by a molecular dynamics
method for investigating how and what defects are generated on the graphite surface. We
perform two kinds of simulations for investigating the shapes and the number of defects:
1. Irradiating a platinum atom to graphite with varying the velocity and the position (Fig. 1).
2. Irradiating multiple platinum atoms to graphite for the random positions with varying thevelocities and the incident angles (Fig. 2).
Our calculations show that shape and size of the defects are affected by the irradiation theposition, the velocity and the angle of a platinum atom.

Fig.1 Schematic illustration of simulation 1

Fig.2 Schematic illustration of simulation 2[1] K. Miyazawa, M. Yoshitake, Y. Tanaka, Journal of Nanoparticle Research 19, 6 (2017).
[2] S. Kattel, G. Wang, et al., J Chem Phys 141 (2014).
[3] K. Okazaki-Maeda, Y. Morikawa, S. Tanaka, M. Kohyama, Surface Science 604 (2018).
Corresponding Author: Takahiro Yamamoto
Tel&Fax +81-3-5876-1486,
E-mail: takahiro@rs.tus.ac.jp- 111 -

2P-26

Transport properties of armchair graphene nanoribbons○ M. S. Islam, N. T. Hung, A. R. T. Nugraha, R. Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Graphene nanoribbons (GNRs) are one-dimensional materials, which have promising
applications in nanoelectronic and optoelectronic devices [1]. The energy bandgaps (𝐸𝐸𝑔𝑔 ) ofarmchair graphene nanoribbons (AGNRs) are inversely proportional to their ribbon widths [2].
The experiment showed the same 𝐸𝐸𝑔𝑔 for both undoped and boron-doped 7-AGNR, around 2.3
eV [3, 4]. Recently, Y. Wu et al. reported that the GNRs with larger 𝐸𝐸𝑔𝑔 family are more suitable
for nanoscale device application [5]. Moreover, Z. Chen et al., found that the resistivity of GNRs
increase with decreasing ribbon width in the graphene nanoribbon field-effect transistor(GNRFET) [6]. However, we expect that the electronic band structures and carrier concentration
not only depend on ribbons width but also depend on doping. For making advanced electronic
devices, the key factor is the ability to modulate the energy band structure and carrier
concentration of AGNRs, by doping with p-type or n-type dopant heteroatoms at a specificed
position in the nanoribbon [7]. In this study, we investigate the energy band structure of the
AGNRs with position selectively doped boron and nitrogen atoms. We also simulate the currentvoltage relationship for both undoped and boron and nitrogen doped AGNRs with changing
ribbon width.
In order to confirm the doping effect, wetheoretically calculate the energy band structuresof AGNRs, with doping boron and nitrogenatoms, by using the density functional theory(DFT). The calculated result shows that theenergy band structure of the AGNRs is affectedby doping. The nanoribbons become metallic for
doping odd number of boron or nitrogen atom andbecome semiconductor if we dope both boron andnitrogen atom together. For computing thetransport properties of the AGNRs, we use nonequilibrium Green’s function approach [8]. Our
calculated results will explain the doping
dependence I-V characteristics of the device asshown in Fig. 1.

Fig. 1: Structure of simulated GNRFET[1] A. Kimouche et al., Nat. Commun. 6, 10177 (2015)[2] Y. W. Son et al., Phys Rev. Lett. 97, 216803 (2006)[3] P. Ruffieux et al., ACS Nano. 6 (8), 6930 (2012)[4] S. Kawai et al., Nat. Commun. 6, 8098 (2015)[5] Y. Wu et al. 2014 International Conference on Anti-Counterfeiting, Security and
Identification (ASID), Macao, 2014, pp. 1-4[6] Z. Chen et al., Physica E 40 228 (2007)[7] R. R. Cloke et al., J. Am. Chem. Soc. 137, 8872 (2015)[8] S. Bruzzone et al, IEEE Transaction on Electron Devices 61(1), 48 (2014)
Corresponding Author: Md Shafiqul Islam
E-mail: islam@flex.phys.tohoku.ac.jp- 112 -

2P-27
Electronic structures of porphyrin graphene nanoribbons○Hideyuki Jippo1, Manabu Ohtomo1, Shintaro Sato1, Hironobu Hayashi2, Hiroko Yamada2,
Mari Ohfuchi1
1

AI Platform Business Unit, Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa
243-0197, Japan
2
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST),
8916-5, Takayama-cho, Ikoma, Nara 630-0192, Japan
We propose novel graphene nanoribbons (GNRs) with metal porphyrin complexes(Porphyrin-GNRs), which can be obtained by the bottom-up GNR synthesis [1]. In this study,
we investigate the electronic structures of the Porphyrin-GNRs using the first-principles
calculations.
Figure 1 shows the most stable geometries for thePorphyrin-GNRs without a metal center (M) and with M= Fe. The porphyrin rings are embedded in the armchair
GNR with n = 7 width (7-AGNR). The densities of statesby the GGA-PBE are partially shown in Fig. 2. The band
gap for the Porphyrin-GNR without M is 0.54 eV, whichis quite smaller than that of 1.6 eV for the 7-AGNR. We
have found that the magnetic moment is 2.07 μB and
0.00 μB for M = Fe and Ni, respectively. The band gaps
also differ depending on the M. These results suggest that
we can control the electronic and magnetic properties of
the Porphyrin-GNRs by changing the metal center. We
also discuss the electronic properties of thePorphyrin-GNRs with another periodic models of theporphyrin rings.

Fig. 1: Optimized geometries ofPorphyrin-GNRs (a) without and (b)with a metal center. The dottedsquare indicates the unit cell.

Fig. 2: Density of states (DOS) for Porphyrin-GNRs (a) without and (b)(c) with metal centers (M). The DOS
for the up and down spins are shown in positive and negative values, respectively.
This work was partly supported by JST, CREST (No. JPMJCR15F1).
[1] J. Cai et al., Nature 466, 470 (2010).
Corresponding Author: H. Jippo, Tel: +81-46-250-8843, E-mail: jippo.hideyuki@jp.fujitsu.com- 113 -

2P-28
Electrostatic properties of graphene nanoribbons under an external electric fieldYoshimasa Omata, Susumu Okada
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571,
Japan
Graphene and its derivatives have been attracting much attention as emerging materials forvarious functional devices because of their unique geometric and electronic structures.
Graphene nanoribbons (GNRs) are one of representative examples of such materials forelectronic and spintronic devices, because of their tunable electronic structure by controlling
its width and edge shapes. For the electronics application, it is mandatory to corroborate
electronic properties of GNRs under the electric field in terms of the carrier accumulations.
Thus, in this work, we aim to investigate the electronic structure of GNRs under the external
electric filed in terms of their width, edge shapes, and stacking arrangements, using thedensity functional theory with the effective screening medium method.
Figure 1 shows the contour plots of the electrostatic potential of bilayer armchair GNRs with
AB-stacking arrangement. The electrostatic potential exhibits asymmetric feature with respect
to the carrier species. For the hole injection, electric filed concentrate at the interlayer region,
indicating that the carriers are accommodated in π electron states. In contrast, for the electron
doping, the field is concentrated at the edge atomic site, indicating that the electrons are
injected into 𝜎𝜎 electron states, even though the edge atomic sites do not possesses dangling
bond states.

	
  	
  	
  	
 
(a)

(b)

Fig. 1 Contour plots of the electrostatic potential of the bilayer a GNRs with AB stacking
arrangement under the electric filed injecting excess (a) 0.1h and (b) 0.1e. The gray circles denote C
atoms.
Corresponding Author: S. Okada
Tel: +81-29-8535921
E-mail: sokada@comas.frsc.tsukuba.ac.jp- 114 -

2P-29Kinetics of hydrazine molecular adsorption with
Ethanol solution on mono-layer MoS2
⃝N.Kodama1, Y.Ishiguro2, K.Takai1,2

12Graduate school of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan

Electronic properties of 2D-materials is easily controlled by using solution-based dopant. A
tunable electron doping by hydrazine aqueous is known for graphene thorough the precise
controlling of the hydrazine concentration and the adsorption time [1, 2]. On mono-layer MoS2,
hydrazine aqueous also injects electron carrier but the presence of water causes hole doping [3].
In this study, mono-layer MoS2 adsorbed with hydrazine solved in ethanol without water isinvestigated in terms of the comparison with the doping by aqueous solution.
Hydrazine solution was dropped on MoS2 mono layer prepared by mechanical exfoliation on
90 nm SiO2/Si substrate, followed by drying by air blow and immediate Raman and PL
measurements with an excitation wavelength of 532 nm at room temperature. The same
operation was repeated while varying the adsorption time or concentration of hydrazine.
On mono-layer MoS2, the A1g mode of Raman spectrum is sensitive to carrier doping. As
shown in Fig.1, that peak position of A1g mode red-shifts and the kinetics of doping is shorter
with 10 % water-solution than 1 % one, indicating good tunability of kinetics by the hydrazine
aqueous concentration. However the hydrazine aqueous adsorption is accompanied with thecompetition between electron doping by hydrazine and hole doping by oxygen in ambient
atmosphere [3]. With ethanol-solution, hydrazine causes similar behavior to hydrazine in water
solution and the kinetics of doping is shorter than water solution as shown in Fig.2. Moreover,
PL results prove that hydrazine causes electron doping. Although the quantity of shift isdifferent, no significant differences are observed in the kinetics of doping between 1 %hydrazine/ethanol-solution and 1 % water with 1% hydrazine/ethanol-solution. So using
ethanol solution makes clear the behavior of hydrazine molecular adsorption on mono-layer
MoS2 that is unsure with aqueous solution.
This project was supported by JSPS and RFBR under the Japan - Russia Research Cooperative
Program.
1
0.5

0%

0

0.1 %
1%

-0.5
-1

∆peakposition (cm-1)

Δpeakposition (cm-1)[1] Z.Chen et al., APPLIED PHYSICS LETTERS 106, 091602 (2015), [2] T.Umehara et al., FNTG (2015),[3] N.Kodama et al., FNTG (2018)

10 %
0

1200

Time (s)

2400

5
2.5
0

1 % + H2O

-2.5

3600

Fig.1 Kinetics of the quantity of peak positionchanging for A1g peak on mono-layer MoS2 adsorbedwith water solution of hydrazine

0%

-5

1%
0

1200

Time (s)

2400

3600

Fig.2 Kinetics of the quantity of peak positionchanging for A1g peak on mono-layer MoS2 adsorbedwith ethanol solution of hydrazine

Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002
E-mail: takai@hosei.ac.jp- 115 -

2P-30
Exciton polarizability and renormalization effects for optical modulationin monolayer semiconductors○Jiang Pu1, Keichiro Matsuki2, Leiqiang Chu3, Yu Kobayashi4, Shogo Sasaki4
Yasumitsu Miyata4, Goki Eda3, and Taishi Takenobu1,2
1

2

Department of Applied Physics, Nagoya Univ., Nagoya 464-8603, Japan
Department of Advanced Science and Engineering, Waseda Univ., Tokyo 169-8555, Japan3
Physics Department, National Univ. of Singapore, Singapore 117542, Singapore
4
Department of Physics, Tokyo Metropolitan Univ., Tokyo 192-0397, JapanThe strong quantum confinement in monolayer transition metal dichalcogenides (TMDCs)
offers prominent optical modulation capability mediated by enhanced many-body interactions[1]. For example, the quantum-confined Stark effect (QCSE) has been demonstrated [2].
However, the excitons are typically insensitive to out-of-plane electric field because of tightconfinement in vertical direction, so that inducing intense electric field is indispensable foryielding large QCSE. Another key approach is carrier doping effects, which is mainly derived
from the interplay between the decrease of binding energy of excitons (blue-shifts) andbandgap renormalization effects (red-shifts) [3]. Thereby, the co-existence of these tunablemany-body effects dominates optical transitions under carrier accumulations. In particular,
bandgap renormalizations should be dominant to induce pronounced red-shifts of opticaltransitions at high carrier density regimes. This means the wide-range and continuous controlof material carrier density is necessary to reveal the doping effects in optical modulations.
Here, we combine electrolyte-gating method with high-quality CVD-grown monolayers toinvestigate the electric-field- and carrier-density-dependent luminescence properties.
The monolayer WS2 and MoS2 were grown on graphite via CVD process, followed byspin-coating ion-gel films, gelation of ionic liquids, to build electric double layer capacitors.
(Fig 1a) [4]. As increasing voltage applications, the photoluminescence of WS2 initially showsslight a quadratic red-shift of exciton resonance (~ 1 meV) without carrier accumulations,which is dominantly caused by the QCSE. Interestingly, alarger red-shift up to 10 meV is obtained followed bycarrier density accumulation above 1013 cm-2, arising fromprimal contributions of the doping-induced bandgap
renormalizations (Fig. 1b). The observation of crossoverfrom QCSE to many-body effects mediated optical tuning
provides a comprehensive scheme in the use of TMDCs
for light modulations. To further inspire our approach, we
also introduce electrolyte-based TMDC light-emitting
devices. Just biasing to electrolyte-induced p-i-n junctions,
we can achieve red-shifts up to 40 meV for exciton andtrion electroluminescence. Our results reveal the doping
effects in high carrier density regimes provide significant
optical modulation ability in monolayer semiconductors.
[1] Z. Sun, et al. Nat. Photon. 10, 227 (2016)[2] J. G. Roch, et al. Nano Lett. 18, 1070 (2018)[3] L. Meckbach, et al. Appl. Phys. Lett. 112, 061104 (2018)[4] Y. Kobayashi, et al. ACS Nano 9, 4056 (2015)

Corresponding Author: J. Pu, T. Takenobu
E-mail: jiang.pu@ngoya-u.jp, takenobu@nagoya-u.jp, Tel/Fax: +81-52-789-5165- 116 -

2P-31Development of molecular beam epitaxy for preparation of transition metal
dichalcogenide atomic layers and their heterostructures○Koki Terashima1, Yuya Murai1, Takato Hotta1, Kenji Watanabe2, Takashi Taniguchi2,
Hisanori Shinohara1 and Ryo Kitaura1
1

Department of Chemistry, Nagoya University & Institute for Advanced Research, Nagoya 4648602, Japan, 2 National Institute for Materials Science, Tsukuba 305-0044, Japan

Two-dimensional (2D) materials, in particular, 2D-materials-based heterostructures have been
attracting a great deal of attention. Recent research on superconductivity in bilayer graphene
have clearly demonstrated that interlayer interactions in heterostructures can lead to properties
that are drastically different from those of isolated monolayers[1]. To explore the emergence ofnovel properties in heterostructures, the important is to develop highly-controllable crystal
growth method for 2D materials. For this purpose, we have focused on molecular beam epitaxy(MBE) method[2]. In MBE, you can supply sources as molecularbeams, which can abruptly be on/off by the simple shutter
operation. The supply of sources can be slow down to submonolayer per hour, which enables us to control, in principle,
growth of 2D materials at atomic-level. In this work, we havefocused on development of a MBE setup with a stable lowintensity, ~ 1 monolayer/hour, metal beam for the possible various
heterostructures.
Figure 1 shows a photograph of our MBE setup. Using theevaporator shown in the figure, we have successfully supply Mo
Fig.1 a photograph ofwith supply rate of ~ monolayer/hour. Figure 2(a), (b) shows aphotograph and AFM image of MoSe2 grown on a sapphire
our MBE setup.
substrate and a hBN flake. As shown clearly, a
our MBE setup.
large-area film and triangular crystals of MoSe2
can be grown on a sapphire and hBN substrate,
respectively. In the presentation, we will also
address our recent work on growth ofheterostructures.
Corresponding Author: R.Kitaura and H.Shinohara Tel:
+81-52-789-2477, Fax: +81-52-747-6442

Fig.2(a) a photograph of MoSe2 grown on a sapphire

E-mail: r.kitaura@nagoya-u.jp and noris@nagoya-u.jp(b) an AFM image of MoSe2 grown on a hBN flake.

[1] Y. Cao, et al, Nature, 556, (2018).
[2] A. Y. Cho and J. R. Arthur, Prog. Solid State Chem., 10, 157 (1975).

- 117 -

2P-32Single-layer MoS2 as large voltage generator driven by liquid motion○Adha Sukma Aji1, Ryohei Nishi1, Hiroki Ago2, Yutaka Ohno1
1

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University,
Nagoya 464-8601, Japan
2
Global Innovation Center (GIC), Kyushu University,
Fukuoka 816-8580, Japan

Nowadays, large demand for clean energy drives researchers to find a new sophisticated way
to extract the energy from clean source. In particular, the direct energy extraction from water ispreferable due to its abundant availability. Recently, several examples of energy generationfrom liquid motion on top of two-dimensional (2D) materials (e.g., graphene) have been
demonstrated.[1,2] However, due to small generated voltage resulted by using graphene,
another approach is needed to gain a larger voltage. Here, we present an innovative method toincrease the generation voltage by using single-layer
MoS2. The results show that single-layer MoS2 could
generate a large voltage over 5 V which is larger than
the reported graphene-based generators mentioned
above.
First, the large-area single-layer MoS2 wassynthesized by chemical vapor deposition method(CVD) using MoO3 powder and sulfur powder on a cplane sapphire substrate. Then, the as-synthesized
MoS2 was transferred onto a flexible polyethylene
naphthalate (PEN) substrate. Next, 50 μL of 1 M NaCl
droplets were dropped onto the MoS2 sample that was
inclined at 45º as shown in Fig. 1a. The generated
voltage over 5 V, shown in the shaded area in Fig. 1b,
was obtained as the water glided on hydrophobic MoS2
surface. Furthermore, the generated power was alsomeasured by connecting the system with load
resistance. As shown in Fig. 1c, we found out thatsingle-layer MoS2 could generate power up to 1.75 nWfrom a small volume of a liquid droplet. Some
improvements are required in the future to increase thegenerated power, such as by doping the materials or
optimizing the liquid ion concentration.
In conclusion, we have demonstrated that singlelayer MoS2 film is a promising material for harvestingenergy from the dynamics of water as renewableenergy source.
[1] J. Yin et al., Nat. Nanotechnol. 9, 378 (2014).
[2] S. Kwak et al., ACS Nano 10, 7297 (2016)
Corresponding Author: Y. Ohno
Tel & Fax: +81-52-789-5387
E-mail: yohno@nagoya-u.jp
Acknowledgment: JST/CREST (JPMJCR16Q2)

Fig. 1. (a) Schematic view of the device. (b)Generated voltage induced by liquidmovement on MoS2. (c) Generated voltage
and power induced by liquid movement
under different value of load resistance.

- 118 -

2P-33The spin angular momentum of surface plasmon in 2D material
M. Shoufie Ukhtary, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Surface plasmon (SP) is electromagnetic (EM) wave propagating on the surface of a material withcarrying “spin angular momentum (SAM)”, which gives torque and force to nano particle placed near
the surface. SP is interesting due to the potential applications, such as optical switching devices,
biosensors and wave guide based on the excitation of SP. The strength of EM field decays in theperpendicular direction to the surface, making the SP confined. The decaying of EM field gives thephase difference between in plane and perpendicular components of electric field, which is
responsible for the emergence of unique spin angular momentum (SAM) of the SP due to the rotationof electric field [1,2]. This SAM is unique since it is transverse to the direction of propagation of theSP, in contrast to the SAM of the freely propagating circular polarized wave whose SAM is parallelto the direction of propagation [1]. Interestingly, the SAM of SP exerts torque, which spins thenanoparticle close to the surface of material [Fig. (a)]. The SAM can be observed experimentally bymeasuring this torque [1,2].
It is reported that the magnitude of SAM of SP on the surface of bulk metal depends on the frequency.
However, it is not tunable for fixed frequency of SP. In this work, we investigate how to tune themagnitude of SAM of SP in 2D material, such as graphene, by controlling the properties of 2D
material, such as the Fermi energy. The tuning of the Fermi energy can be done by using gate voltage.
We show that the total magnitude of SAM decreases as a function of frequency and increases with
the increasing Fermi energy [Fig. (b)], however, the magnitude of SAM per a plasmon is relatively
constant. The torqueexerted
on
the


nanoparticle close to
the surface of 2D
material is also  tunable by the Fermienergy. In this work,
we also investigate
how the SP obtains
the SAM during theexcitation by light,(a) The SAM of SP “spins” the nanoparticle, in which “N” and “F”
denote, respectively, torque and force due to the SP [2] (b) The total
which is important
SAM as a function of frequency for some values of the Fermi energy.
to understand thephysical origin of
SAM of the SP.
References:[1] Bliokh et al. Nat. Comm. 5(1), 1825. (2014)[2] Durand et al, PRA 89, 033841, (2014)
Corresponding Author: M. Shoufie Ukhtary,
Email:shoufie@flex.phys.tohoku.ac.jp- 119 -

2P-34Growth dynamics of hexagonal boron nitride on Ni-Fe alloy catalysts○Yuki Uchida1, Kenji Kawahara2, Masato Akiyama1, Shigeto Yamasaki1,
Masatoshi Mitsuhara1, Hiroki Ago1,2,3
1

IGSES, Kyushu University, Fukuoka 816-8580, Japan, 2 Global Innovation Center (GIC). Kyushu
University, Fukuoka 816-8580, Japan, 3 JST-CREST

Hexagonal boron nitride (h-BN) has been widely used as an insulating layer to obtain
intrinsic properties of various 2D materials due to its atomically smooth and dangling
bond-free surface with low polarizable surface optical phonons [1-3]. Recently, we haveachieved uniform growth of multilayer h-BN on a Ni-Fe alloy film deposited on a spinel(MgAl2O4) (100) substrate using borazine (B3N3H6) feedstock [4]. However, the growthmechanism of multilayer h-BN was not clearly understood, and expensive and small spinel
substrates limited practical applications of the CVD-grown multilayer h-BN.
In this study, we investigate the growth mechanism of multilayer h-BN using Ni-Fe films
supported on single-crystalline sapphire (-Al2O3) substrates, because sapphire iscost-effective substrate with large available size. We studied different sapphire substrates withr-, a-, and c-planes. As shown in Figure 1a-c, the growth of uniform and continuous multilayerh-BN was observed on the Ni-Fe/r-plane sapphire, while the Ni-Fe/c-plane sapphire gave
low-density, isolated h-BN grains. Figure 1d,e shows crystal plane maps of the Ni-Fe films
measured before and after the borazine supply. The Ni-Fe film on c-plane sapphire, which did
not give uniform h-BN film, showed a fcc(111) plane throughout the process (Fig. 1e). In
contrast, the Ni-Fe film deposited on r-plane sapphire showed the drastic change frompolycrystalline to fcc(111) by the introduction of borazine (Fig. 1d). It is interesting that such
structural change occurred in 1 min. We speculate that the polycrystalline Ni-Fe film
stimulates the dissolution of B and N atoms and the structural conversion to fcc(111) isaccompanied with the segregation of uniform h-BN. Our engineered catalyst will allow to
produce large-area h-BN with relatively low cost for stimulating various practicalapplications.
(a)

(c)

(d)

Multilayer h-BNfcc(111)(b)(e)

fcc(111)fcc(111)Multilayer h-BN

Fig. 1 Optical micrographs of h-BN grown on Ni-Fe/r-plane (a) and c-plane (b) sapphire measured after thetransfer on SiO2/Si. (c) h-BN coverages on each catalyst determined by optical micrographs. EBSD imagesof Ni-Fe/ sapphire r-plane (d) and c-plane (e) measured before and after the 1-minute borazine supply.
[1] C. R. Dean et al., Nat. Nanotechnol., 5, 722 (2010). [2] M. Okada et al., ACS Nano, 8, 8273 (2014). [3] X.
Cui et al., Nat. Nanotechnol., 10, 534 (2015). [4] Y. Uchida et al., ACS Nano, 12, 6236 (2018).
Corresponding Author: H. Ago, Tel&Fax: 092-583-8852, E-mail: h-ago@gic.kyushu-u.ac.jp- 120 -

2P-35Growth of monolayer chalcogenide nanoribbons and their heterostructures○Yu Kobayashi1, Zheng Liu2, Toshifumi Irisawa3, Yutaka Maniwa1, Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Inorganic Functional Materials Research Institute, National Institute of Advanced Industrial
Science and Technology (AIST), Nagoya, Aichi 463-8560, Japan
3
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8568, Japan

Transition metal dichalcogenides (TMDCs) have attracted much attention owning to theirunique physical properties and potential applications. To take advantage of these potentials, it
is important to develop a controlled growth process of various TMDC-based nanostructures
such as nanoribbons (NRs) and superlattices. Here, we report the direct growth of monolayer
MoSe2 NRs and ribbon-templated heterostructures by using metal-organic chemical vapor
deposition. As shown in Fig. 1a and b, the MoSe2 NR with width of approximately 40 nm was
successfully synthesized by controlling selenium-metal flux ratio. Electron microscopeobservations reveal that the MoSe2 NRs correspond to twinned crystals with metal zigzag
edges. This structure is completely different from the single-crystal MoSe2 NRs reported
previously [1]. Furthermore, we have demonstrated the fabrications of ribbon-based in-plane
heterostructures of WSe2/MoSe2 and MoS2/MoSe2 by using MoSe2 NRs as a template (Fig.
1c). Our findings would provide a useful way to create novel one-dimensional TMDC
nanostructures and their hybrid systems.

Fig.1 (a) Optical microscope and (b) atomic force microscope images of monolayer MoSe2 nanoribbons
grown on a SiO2/Si substrate. (c) Optical microscope image (top) and photoluminescence (PL) intensity map(bottom) of WSe2/MoSe2 ribbon-shaped in-plane heterostructures. In the PL intensity map, blight and darkgray correspond to the PL intensities of monolayer MoSe2 and WSe2, respectively.

[1] Y. Chen et al. Nat. Commun. 8, 15135 (2017).
Corresponding Author: Y. Miyata
Tel: +81-42-677-2508
Fax: +81-42-677-2483
E-mail : ymiyata@tmu.ac.jp- 121 -

2P-36
Phosphorescence Spectra of Cyanopolyyne HC11N
Urszula Szczepaniak1, Tsukumi Higashiyama2, Ryoske Sata2, Hal Suzuki2,
Yusuke Morisawa1, ○Tomonari Wakabayashi2
12IRsweep AG, Laubisrütistrasse 44, Stäfa 8712, Switzerland
Department of Chemistry, Kindai University, Higashi-Osaka, Osaka 577-8502, Japan

Cyanopolyynes are known for their radio-frequency detection in the interstellar space inthe late 70’s. Molecules up to HC9N have been identified, while the observation of HC11N in
the molecular cloud TMC-1 [1] was recently negated [2]. Very recently, phosphorescence
spectra were observed for cyanopolyynes, HC5N, HC7N, and HC9N, in cryogenic matrices[3-5]. In this work, phosphorescence spectra were detected for the longer cyanopolyyne
molecule of HC11N in solid matrices of acetonitrile at 20 K.
The sample molecule, H(C≡C)5C≡N, was produced by laser ablation of graphite in liquid
acetonitrile, and isolated by using HPLC techniques [6]. The solution containing HC11N in
acetonitrile was co-condensed on a copper slab cooled at 20 K in vacuum. The solid matrix
sample was irradiated with the second harmonics of OPO laser (GWU VersaScan, 215−300nm) to record optical emission spectra on a polychromator with a CCD array detector (Acton
SP308i, SPEC10).
Dispersed phosphorescence spectra of HC11N in solid acetonitrile at 20 K show vibrational
progression, 0−n (n = 0−2), at 644, 745, and 886 nm for the stretching mode, which ischaracteristic of the sp-carbon chain (Fig. 1). The phosphorescence lifetime was ~7.5 ms forthe a3S+ → X1S+ transition. The excitation spectra of HC11N in the UV region (Fig. 2 top) is
comparable to the UV absorption spectra of the molecule in solution at ambient temperature.
[1] M. B. Bell et al. Astrophys. J. 483, L61 (1997). [2] R. A. Loomis et al. Mon. Not. Roy. Astron. Soc. 463,
4175 (2016). [3] M. Turowski et al. J. Chem. Phys. 133, 074310 (2010). [4] I. Couturier-Tamburelli et al. J.
Chem. Phys. 140, 044329 (2014). [5] U. Szczepaniak et al. J. Phys. Chem. A 121, 7374 (2017). [6] T.
Wakabayashi et al. Carbon 50, 47 (2012).

Fig. 1. Phosphorescence spectra of HC11N.
Corresponding Author: T. Wakabayashi
Tel: +81-4307-3408, Fax: +81-6723-2721,
E-mail: wakaba@chem.kindai.ac.jp- 122 -

Fig. 2. Phosphorescence excitation spectra
at 20 K (top) and absorption spectrain solution (bottom) of cyanopolyyne
HC11N in acetonitrile.

2P-37
Electrochemical characterization of CVD-grown graphene films
for glucose biofuel cells○Keishu Miki, Akihiro Kato, Takeshi Watanabe, and Shinji Koh
Department of Electrical Engineering and Electronics,
Aoyama Gakuin University, Sagamihara 252-5258, Japan
Enzyme-based biofuel cells are an attractive alternative to conventional fuel cell
technology for portable power sources and in medical implantable device applications. In adevelopment of biofuel cells, designing electrode/biomolecules interface is extremely
important to achieve the efficient electron transfer. Graphene can be expected as electrodematerials for biofuel cells due to high conductivity, large surface area, biocompatibility, andits ability to interact with molecules. These excellent properties can be utilized to facilitate
direct electrical contact between the redox site of the enzyme and electrode surfaces, and toimmobilize the enzymes onto the electrode surfaces. In particular, we focus on chemical
vapor deposition (CVD)-grown graphene sheets because their high uniformity andcontrollability can facilitate the evaluation of biomolecule-modified electrodes. In this study,
we evaluated electrochemical properties of CVD-grown monolayer and multi-layer graphene
electrodes utilizing enzymes and mediators towards biofuel cells application.
Monolayer and multi-layer graphene sheets were prepared by CVD on copper foils andtransferred onto SiO2/Si substrates via a poly-methyl methacrylate (PMMA) assisted transfer
method. The transferred graphene sheets were confirmed to be monolayer and multi-layer by
Raman spectroscopy. The electrochemical properties of the graphene sheets were evaluated bycyclic voltammetry (CV) measurements in 0.2 M phosphate buffer solution (PBS) containing
10 µM glucose oxidase (GOx) and 10 mM ferrocenedicarboxylic acid (FcDA) as a mediatorwhile changing the glucose concentrations.
Figure 1 presents the cyclic voltammograms of the monolayer graphene electrode in theabsence and presence of 11 mM glucose. A vivid increase in the biocatalytic current isobserved at E > 0.2 V (vs. Ag/AgCl) when glucose was added. The inset of Fig. 1 shows theplots of the biocatalytic current versus glucose concentration of monolayer and multi-layer
graphene electrodes at a potential of 0.7 V, in which the biocatalytic current reached a plateau
at glucose concentrations higher than 50
mM, indicating the Michaelis–Menten
kinetics. It should be noted that the enzyme
electrode reaction could be observed evenwith monolayer graphene having a thicknessof only one atomic layer. From these results,
it is considered that monolayer graphene
electrodes will be useful platform toinvestigate direct electron transfer (DET)
mechanism at a biomolecule/electrodeinterface for development of efficient
DET-based enzymatic fuel cells.
Corresponding Author: Shinji Koh
Tel: +81-42-759-6251, Fax: +81-42-759-6251,
E-mail: koh@ee.aoyama.ac.jp

Fig.1 Cyclic voltammograms of monolayer
graphene electrode. Inset: plots of the catalytic
current vs. glucose concentration at E = 0.7 V.

- 123 -

2P-38Quantification of Single-Walled Carbon Nanotubes in Mouse Feces
Mayumi Erata1, Yuko Okamatsu-Ogura2, Takeshi Tanaka1, Hiromichi Kataura1, ○Masako
Yudasaka1, 3
1

Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, 305-8565, Japan2
Department of Biomedical Sciences, Graduate School of Veterinary Medicine, Hokkaido
University, Sapporo 060-0818, Japan
3
Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan
Single-walled carbon nanotubes (CNTs) administered in mice are reportedly shown to be
excreted in feces and urines. We have been developing methods of quantifying CNTs in feces
and urine by measuring optical absorption bands of CNTs extracted from feces and urine. The
method proposed previously includes preparation of lysates of feces or urines and separation of
CNTs by the phase transfer technique. The method has been improved to be applicable to alarge amount of feces as is shown in this presentation.
The feces and urine were collected from mice after intravenous injection of PLPEG-CNTs. In
the collection of feces and urines separately, metabolic cages were used. The collection time
points were every 1 or 2 hours until 6 hours of post injection time (PIT), and 1-2 days, because
CNTs are excreted in feces in 4-24 hours and in urines in a couple of hours of PIT.
The collected feces were immersed in an alkaline detergent (non-phosphoric acid type forremoval of oil, fat, protein, hydrocarbon) for 2-3 hours and sonicated with horn-type tips for 12 min, obtaining feces lysates. For the separation of CNTs from the lysate, 30% KOH solution(1 mL) were added and vigorously mixed and centrifuged. As a result, cotton like floating
objects were obtained at the upper area of the supernatant. Non-dissolving components fromfeces were fallen at the bottom via centrifuge, and the cotton like objects were sucked and put
in another tube with the same amount of aq. KOH solution. After mixing, the tube wascentrifuged and the liquid part was removed leaving 0.5 mL. The obtained cotton-like objects
with 0.5 mL liquid was mixed with 30% KOH solution (0.5 mL), after that, isopropanol (1 mL)
was poured and well mixed. After the centrifugation, the dispersion solution separated in twolayers of KOH rich and isopropanol rich ones, and CNTs were precipitated at the interface ofthe two layers. The precipitated CNTs were taken out and its optical absorption spectra were
measured. Here, when the KOH-rich lower layers were turbid, isopropanol/KOH phase transfer
separation was repeated until the lower layer became clear, which was effective to lower the
spectrum BG. Since the impurity peak appeared in 1000-1300 nm, the appropriate peaks for the
CNT Quantification was those in 600-900 nm. The spectra were similar to that of the originalone. The effect of improvements was confirmed by the CNT recovery rate of 80% in phantom
experiments.
Corresponding Author: M. Yudasaka, E-mail: m-yudasaka@aist.go.jp- 124 -

3P-1
Platinum-catalyzed reaction of [60]fullerene with
9-Ethynyl-9H-fluoren-9-yl carboxylates○Mayu Takizawa1, Yoko Nukatani1, Mitsuaki Suzuki2, Yutaka Maeda 1, Michio Yamada1
1

Department of Chemistry, Tokyo Gakugei University, Koganei, Tokyo 184-8501, Japan2
Department of Chemistry, Josai University, Sakado, Saitama 350-0295, Japan

Allenes have been recognized as valuable precursors in modern synthetic chemistry owing
to the ability to undergo a variety of skeletal transformations [1]. Notably, allenes areapplicable for fullerene functionalization [2], which has been a fascinating research topic inmaterials chemistry. It was reported that fluorenylideneallenes (Fig.1) are highly reactive andtend to dimerize easily to form isomeric mixtures of cyclobutanes even at low temperature [3].
Therefore, exploration of the applicability of fluorenylideneallenes for synthetic chemistry
remains rather rare [4]. Recently, we have demonstrated that transition-metal-catalyzed
reactions between [60]fullerene (C60) and propargylic esters yielded formal [2+2] and [4+2]cycloadducts in reasonable yields [2d]. In that case, the formal [2+2] cycloaddition is likely to
involve formation of allene intermediates via 6-endo-dig cyclization. This achievement
motivated us to explore the reactivity of fluorenylideneallenes with fullerenes by examining
the reactions of C60 with 9-ethynyl-9H-fluoren-9-yl carboxylates (2a–2c) in the presence oftransition metals. In this presentation, we show that platinum-catalyzed reactions of C60 withcarboxylates 2a–2c yield the corresponding [2+2] cycloadducts 3 in reasonable yields
O(Scheme 1).
O

R2
R2
R2
O
R

O

O

1α β

C60, PtCl2,
toluene, 80ºC

2a R1 = H, R2 = n-C7H15
2b R1 = n-C4H9, R2 = CH3
2c R1 = 4-n-C4H9-C6H4, R2 = CH3

Fig.1 Structure of fluorenylideneallene.

O
R1

O

+

R1

γ

Fluorenylideneallene

O

R2

R1

Z-β,γ-cycloadduct

E-β,γ-cycloadductZ-3a 3% (3%)
Z-3b 45% (67%)
Z-3c 12% (67%)

E-3a 25% (29%)
E-3b not obtained
E-3c not obtained

Scheme 1. Pt-Catalyzed reaction of C60 with 2a–2c.

[1] Modern Allene Chemistry, Volumes 1–2; N. Krause, S. K. Hashmi, Eds.; Wiley-VCH: Weinheim, 2004.
[2] (a) V. Nair et al. Synthesis 1655 (2002). (b) B. Bildstein et al. Organometallics 18, 4286 (1999). (c) M. Ueda
et al. Chem. Commun. 52, 13175 (2016). (d) M. Yamada et al. Org. Biomol. Chem. 15, 8499 (2017).
[3] (a) Buchmeiser, M.; Schotenberger, H. Organometallics 12, 2472 (1993). (b) Banide, E. V. et al. Chem. Eur. J.
12, 32750 (2006). (c) Banide, E. V. et al. Eur. J. Org. Chem. 2611 (2007). Alcaide, B. et al. Chem. Soc. Rev. 39,
783 (2010).
[4] (a) D. Palomas et al. Dalton Trans. 41, 9073 (2012). (b) S. Qiu et al. Org. Lett. 18, 6018 (2016).
Corresponding Author: M. Yamada
Tel: +81-42-329-7493, Fax: +81-42-329-7493
E-mail: myamada@u-gakugei.ac.jp- 125 -

3P-2
Observation of Single-Molecule Reactions Inside Individual Carbon
Nanotubes
Chenmaya Xia, Juan Yang*, Henan Li, Daqi Zhang, Sheng Li,
Haoming Liu, Ruoming Li, Yan Li*
College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Monitoring the chemical reaction of an isolated single molecule (SM) is a long-standing
challenge to understand the molecular reactivity at the most fundamental limit. The present
methods of direct observation of a definite SM reaction [1,2] will inevitably interfere thetarget reaction. We here propose a strategy to encapsulate and isolate single molecules inside
individual single-walled carbon nanotubes (SWNTs), the interior of which serves as ananoscale confined space of inert environment to facilitate the study of SM reaction [3]. We
utilize surface-enhanced Raman spectroscopy (SERS) to achieve the ultrasensitivity that canmonitor the Raman fingerprints of the encapsulated single molecules as they undergo achemical reaction. In this system, the unique 1D structure of SWNT plays important roles infacilitating SM study: The nanoscale interior (1-2 nm in diameter) allows SM encapsulation
whereas the macroscale length (over 100 μm) and the excellent mechanical properties allow
gold nanocrystals (AuNCs, typically 100-200 nm in edge) to deposit on the outer walls for
SM detection by SERS. Our approach offers a robust and reliable method and opens new
possibilities toward SM science by providing an excellent system facilitating the studies ofchemistry and physics at the SM level.

200 nmHot-spot

AuNC
SWNT

Intensity (a.u.)Single Molecule SERS

No

0.9 nm

1400

12C≡14Npeak

1.4 nm×3

13C≡14N peak onlyG

Average

1800

2200

Raman shift (cm-1)

Fig.1 Schematics, SEM image and SERS spectra of the AuNCs-SWNT nanocomposite with a single
rhodamine 800 molecule encapsulated inside the SWNT and located at the hot spot.
[1] K. C. Neuman, A. Nagy, Nat. Methods 5, 491 (2008).
[2] D. G. de Oteyza, P. Gorman, Y. C. Chen et al. Science 340, 1434 (2013).
[3] J. Yang, C. Xia, H. Li et al.submitted.
Corresponding Author: J. Yang
Tel: +86-10-62755357
E-mail: yang_juan@pku.edu.cn- 126 -

3P-3
Solvent dependence of photoluminescence energy shifts at
locally functionalized sites of single-walled carbon nanotubes○Yoshiaki Niidome1, Tomohiro Shiraki1,2, Tsuyohiko Fujigaya1,2,3,4
1 Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan

3 Center for Molecular Systems, Kyushu University, Fukuoka 819-0395, Japan
4JST-PRESTO, Saitama 332-0012, Japan

Normalized PL Intensity / a.u.

Single-walled carbon nanotubes (SWNTs) show near infrared photoluminescence (PL) that issensitively changed by microenvironments composed of surfactants and solvent molecules [1].
Recently, the SWNTs doped with defects such as oxygen atoms and sp3 carbon are reported, inwhich local functionalization is utilized [2]. The resultant locally functionalized SWNTs (lfSWNTs) emit E11* PL that has narrower band-gap energy with higher quantum yields comparedto E11 PL of pristine SWNTs. As a characteristic of lf-SWNTs, E11* PL wavelengths are
modulated depending on the chemical structures of the functionalized aryl groups having
different substituents [2] and proximal modification [3].
In this study, we examined microenvironment effects on the E11* PL of lf-SWNTs with arylgroups having different substituents. Here, lf-SWNTs having methoxyaryl (lf-SWNT-OCH3)
and nitroaryl (lf-SWNT-NO2) were synthesized and solubilized in D2O containing sodium
dodecylbenzenesulfonate (SDBS). To create an organic solvent microenvironment, odichlorobenzene (oDCB) was added and mixed. By this procedure, the oDCB molecules are
injected into the hydrophobic domains between the tubes and the coating SDBS micelles [4].
Fig.1 shows PL spectra of synthesized lf-SWNTs-OCH3 and lf-SWNT-NO2, in which E11* PL
was observed and their wavelengths were depending onex=570 nm
the chemical structures of the functional aryl groups, asreported [2]. After injecting oDCB, the PL peaks of E11*
E11
E11*
were red-shifted. We found that (1) the observed energy
shifts for E11* PL were different from those of E11 PL and(2) the shifts of E11* PL for lf-SWNTs-OCH3 and lfSWNTs-NO2 were almost same regardless of chemical
structure difference. The mechanism of these findings
will be discussed based on the interactions between thefunctionalized sites and solvent molecules.
[1] Y. Miyauchi et al. Chem. Phys. Lett. 442, 394 (2007).
[2] Y. Wang et al. Nat. Chem. 5, 840 (2013).
[3] T. Shiraki et al. Sci. Rep. 6, 28393 (2016).
[4] K. J. Ziegler et al. Phys. Chem. Chem. Phys. 12. 6990 (2010).
Corresponding Author: T. Fujigaya
Tel/Fax: +81-92-802-2842,
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp

1000
1100
1200
1300
Emission Wavelength / nm

Fig. 1 PL spectra of lf-SWNT-OCH3 (solidline) and lf-SWNT-NO2 (dashed line) in
D2O containing SDBS.

- 127 -

3P-4
Low-voltage operable and stretchable carbon nanotube integrated circuits○Yuya Nishio1, Taiga Kashima1, Jun Hirotani1, Shigeru Kishimoto1, and Yutaka Ohno1,2
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

2

Stretchable devices can closely contact with dynamic and free-form surfaces such as humanskin, internal organs, and clothes, and they are considered to be useful for wearable biomedical
applications or artificial electronic skins. Recently, formable carbon nanotube thin-film
transistors (CNT TFTs) which utilize CNT thin films for the electrodes and channel have beenreported. [1] However, they still have challenges such as robust electrical performance against
externally applied tensile strain and the reduction of operation voltage. Moreover, stretchable
integrated circuits are necessary to realize functionalities for precise and reliable wearable
applications. In this work, we realized stretchable CNT integrated circuits (ICs) by introducing
a local strain suppression layer.
We fabricated CNT ICs with a channel of a semiconducting CNT thin film, CNT transparent
electrodes, and a 50 nm-thick Al2O3 gate dielectric layer on a stretchable poly(dimethylsiloxane) (PDMS) film. In order to suppress the influence of applied strain, local
strain suppression layer composed of a rigid polymer with a high Young’s modulus wasintroduced on top of the channel region.
We fabricated inverters composed of a driver transistor which controls current and a loadtransistor which functions as a resistor. Figure 1 shows transfer curves of a fabricated inverter
drived at various supply voltages (VDD’s) from -2.5 to -1 V. The inverter operated at low VDD as-1 V with a gain of 5.5 dB. Moreover, negligible
hysteresis was observed when |VDD| was less2.5
V = -2.5 V
than 1.5 V. These results show that the present
V = -2 V
2.0
V = -1.5 V
stretchable CNT ICs with a strain suppression
V = -1 V
layer are promising for realizing low power
1.5
wearable devices.
1.0
Acknowledgments: The semiconducting CNTs
used in this work was provided by TACS. This
0.5
work was partially supported by JST/CREST
0.0(JPMJCR16Q2).
0.0
0.5
1.0
1.5
2.0
2.5
DD

Output voltage (V)DD[1] D.-M. Sun et al., Nat. Comm. 4, 2302 (2013).

DD
DD

Input voltage (V)Fig. 1 Voltage transfer curves of a fabricated inverter.
Corresponding Author: Y. Ohno
Phone & Fax: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 128 -

3P-5
Photo-thermoelectric detection of cyclotron resonance in graphene○Kei Kinoshita1, Rai Moriya1, Miho Arai1, Satoru Masubuchi1,
Kenji Watanabe2, Takashi Taniguchi2, and Tomoki Machida1,3
1

IIS, The University of Tokyo, Tokyo 153-8505, Japan
2
NIMS, Ibaraki 305-0044, Japan 3CREST-JST

We demonstrate the detection of a cyclotron resonance in Landau-quantized graphene
under infrared light irradiation by utilizing photo-thermoelectric effect, which is significant ingraphene because of its small electron heat capacity and large thermoelectric coefficient.
Since photo-thermoelectric effect contains photo-Seebeck and photo-Nernst components andtheir symmetry are different, we achieved the selective detection of each component bycarefully tuning the symmetry of device.[1] (1) Photo-Seebeck effect generates voltage along
thermal gradient created under light irradiation. To detect this, we fabricated double
back-gated h-BN/Gr/h-BN device as shown in Figs. (a)(b). This creates asymmetric carrier
density profile between left and right region of graphene. With the help of this asymmetricstructure, we demonstrate infrared photodetection at zero-field [Fig. (c)]. (2) To detectphoto-Nernst effect, a part of graphene is covered with metal mask to generate photo-induced
thermal gradient perpendicular to the voltage probe as shown in Figs. (a)(b). Unlike
photo-Seebeck effect, Photo-Nernst voltage was noticeable only under application ofmagnetic fields and its sign reversed upon a reversal of the magnetic field direction [Fig. (c)].
Importantly, both photo-Seebeck and photo-Nernst effect signal strongly enhanced at
cyclotron resonance [Fig. (d)]. These results highlight possibility of high-sensitive infrared
detection using photo-thermoelectric effect in graphene.

(Upper) Photo-Seebeck effect, (Lower) Photo-Nernst effect. (a) Experimental concept. (b) Optical micrographof the device. (c) The photovoltage signal at low magnetic field. (d) Cyclotron resonance and Landau levels ofgraphene.
[1] K. Kinoshita et al. Appl. Phys. Lett. 113, 103102 (2018). (Selected as Editor’s pick)
Corresponding Author: K. Kinoshita
Tel: +81-3-5452-6158, Fax: +81-3-5452-6157,
E-mail: kkino@iis.u-tokyo.ac.jp- 129 -

3P-6
Theoretical Analysis on Thermoelectric Effects of Monolayer and Bilayer
Graphene○Hikaru Horii1, Kenji Sasaoka2, Takahiro Yamamoto1,2, Hidetoshi Fukuyama3
1

Faculty of Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
2
RIST, Tokyo University of Science, Tokyo 125-8585, Japan
3
Tokyo University of Science, Tokyo 162-8601, Japan

Thermoelectric (TE) generation is a potential key technology for recovering energy fromwaste heat. Among the various potential candidates for TE materials, nanocarbon materials
have attracted attention as flexible and high-performance TE materials. Most recently,
Yamamoto and Fukuyama reported that the semiconducting carbon nanotubes (CNTs) exhibit
high TE performance when the chemical potential μ locates near a band edge with sharp densityof states (DOS) originating from its one dimensionality [1,2]. On the other hand, the monolayer
graphene (MLG) cannot be expected to be high-TE performance because it has no band gap at
the charge neutral point.
In this study, we focus on the bilayer graphene (BLG) since the band gap can be opened byapplying the electric field perpendicular to the BLG, as shown in Fig. 1 [3]. We have calculated
the Seebeck coefficient S and the power factor PF of the MLG and the BLG in the presence ofvertical electric field E⊥ using the Kubo’s linear response theory combined with thermal
Green’s function method which was recently developed [1,2]. We adopt the constant-τ
approximation for self-energy due to carrier scattering [2].
We found that the values of S and PF can becontrolled by changing the magnitude of E⊥. For
example, we obtained S ~ 200 μV/K and PF ~ 40
mW/mK2 when μ lies close to a band edge and thevertical electric field is E⊥ = 4.7 MV/cm. This isbecause the DOS of BLG under E⊥ has a sharp peaknear the band edge, which is similar to carbon
nanotubes. On the other hand, in the high-energy
regimes where μ is much larger than the band gap, S
is inversely proportional to the chemical potential,
Fig. 1 Bilayer Graphene in Vertical Electric Fieldi.e., S ∝ μ-1. The μ-1 behavior of BLG is similar tothe case of CNTs. In contrast to S, the thermoelectric conductivity L12, which is defined as theelectric current density in response to the temperature gradient, shows the different μdependence between the two-dimensional graphene and one-dimensional CNTs.
[1] T. Yamamoto and H. Fukuyama, J. Phys. Soc. Jpn. 82, 024707 (2018).
[2] T. Yamamoto and H. Fukuyama, J. Phys. Soc. Jpn. 87, 114710 (2018).
[3] T. Ohta et al. , Science 313, 951 (2006).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1492
E-mail: takahiro@rs.tus.ac.jp- 130 -

3P-7
Topological Edge States Induced by Zak’s Phase in A B Monolayers
3

Tomoaki Kameda, Feng Liu, and Katsunori Wakabayashi
Department of Nanotechnology for Sustainable Energy, School of Science and Technology,
Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
Tel: +82 79 565 9751, Fax: +81 79 565 9729 E-mail: waka@kwansei.ac.jp
Honeycomb lattice network provides a unique platform of various novel functional materials.
One representation example is graphene, one atomic-thickness carbon sheet, where carbon
atoms are placed on a honeycomb lattice with equal electron hopping. Here we show that in a
A B honeycomb monolayer possessing alternating electron hopping can induce edge states inzigzag edge. These edge states have a topological origin similar to graphene, which corresponds
to finite bulk charge polarization described by the Zak’s phase [1,2].
3

A B is a monolayer which has eight atoms in a unit cell as displayed in Fig.1(a). There are two
atomic species A and B. We calculate energy bands of A B zigzag nanoribbon system in
Figs.1(b), using the tight-binding model and show that it has topologically protected edge states(TES). In further, we employ first-principles calculations based on the density functional theory(DFT) to search the possible materials to realize the electronic states of A B system. On thebasis of DFT calculation, C N monolayer is a one of possible candidate materials possessing
TES (Fig.1(c)-(e)). In addition, we confirm that the appearance of TES is owing to the Zak’s
phase.
3

3

3

3

We have discussed the realistic materials which can have TES originated from Zak’s phase ina honeycomb lattice based on DFT. We have found that C N honeycomb monolayer is a possible
candidate material which have TES. Our results will serve to design a new class of topologicalmaterials, especially in atomic-layer-materials.
3

(a)

(b)
1 2 3

Unit cell

(eV)

a

10

NZ

1

a1

1

6
5

4

y

(c)

(d)

5
0

γ
γ’

2

3

a2

(e)

-5

2

-10

−π/a

x

0

k

π/a

FIG. 1. (a) A B lattice structure. There are two atomic species A and B in a unit cell. Yellow shaded areas
indicate unit cell. (b) Structure of A B zigzag ribbon. Thick and thin bonds represent the intracellular γ andinter-cellular γ’ hopping, respectively. (c) C N zigzag nanoribbon energy band structure. Red and blue lines
are energy dispersion for p electrons. Topological states are indicated by black circle, where two energy
dispersions are degenerate. (d)(e) Wave function of TES, where electrons are localized at C N zigzag edge.
3

3

3

3

REFERENCES[1] F. Liu, M. Yamamoto, and K. Wakabayashi, J. Phys. Soc. Jpn. 86, 4 (2017).
[2] J. Zak. Phys. Rev. Lett. 62, 2747 (1989).

- 131 -

3P-8
High-resolution Measurement on Graphene Quantum Dots
by Ion Trap Ion Mobility Measurement System○Yudai Hoshino, Suzuka Tachi, Syota Kuwahara, and Toshiki Sugai
Department of Chemistry, Toho University, Miyama 2-2-1 Funabashi, 274-8510, Japan
Ion mobility spectrometry (IMS) has revealed novel information on nano materials[1].
However, its resolution is low so that the method has been utilized as a subsystem or a filterof the main measurement system such mass spectrometer to eliminate unnecessary samples.
To improve the resolution, IMS systems with trap functions have been developed[2]. We also
have been developing the ion trap ion mobility measurement system, achieving very
long-term successive measurement up to seven hours and observation of quantized charges.
However, the resolution is still too low to derive precise information of nano-materials. Here
we present high-resolution measurement on graphene quantum dots (GQD) by an improved
ion trap ion mobility system.
The system consists of several electrodes
with a hole at the center, where analternative currents with high and low
frequency were applied. Ionized GQD bylaser desorption ionization by a YAG laser
were trapped for around an hour and weremoved reciprocally by 15 mm in nitrogengas at ambient pressure. The distance wasincreased by 5 times compared with theprevious system of 3 mm. The movement
was observed by a digital camera and thevelocity and mobility were analyzed byvideo analyses.
Fig. 1 Observed velocity of GQD
The Fig. 1 shows observed normalized mobility distribution of one particle of ionized GQD
with various charges
by the previous low-resolution and the present high-resolution systems. The standard
deviations are 0.085 and 0.0196 showing that the resolution is enhanced by 4.3 times, which
can help us to have more information on various nano materials. There still exist numbers ofways to improve its resolution. Details are going to be shown in the conference.
[1] T. Sugai et al., J. Am. Chem. Soc. 123, 6427 (2001).
[2] F. Fernandez-Lima et al., J. Ion Mobil. Spec. 14, 93 (2011)

TEL: +81-47-472-4406, E-mail: sugai@chem.sci.toho-u.ac.jp- 132 -

3P-9
Polyyne Formation from Ethylene and Acetylene
by Laser Induced Breakdown○Nobuyuki Takizawa1, Sahr Al-Tuairqi2, Qi Wang2, Joseph H. Sanderson2, Tomonari
Wakabayashi3, and Haruo Shiromaru1
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Department of Physics and Astronomy, University of Waterloo, N2L 3G1 ON, Canada
3
Department of Chemistry, Kindai University, Osaka, 577-8502, Japan
1

2

χp

In our previous study of Laser Induced Breakdown (LIB) [1], we have shown that there is awide variation in polyyne production depending on the target molecules. In LIB, a strong
electric field of tightly focused laser in gaseous media leads to a plasma formation. From theemission spectrum of the plasma and UV spectrum of the products dissolved in hexane, we
found a correlation between C2 swan band intensity and polyyne yield. Two different types oflasers were used in that study; one was a few nanosecond-pulsed Nd:YAG laser (@ TMU), andthe other is an amplified Ti:Sapphire laser which generates 35 femtoseconds pulses (@ UW).
They also differ in other parameters (Nd:YAG , Ti:Sapphire) , wavelength (532 nm , 800 nm),repetition rate (30 Hz, 1 kHz), pulse energy (150 mJ/pulse, 2.0
fs Laser0.6
ns LasermJ/pulse), and focal length of the lens (70 mm, 80 mm), respectively.
Recently, Sun et al. revealed in their study of the crossed
0.3
molecular beam experiment that the reaction of C2nH radicals andacetylene leads to the formation of longer polyynes [2]. In the present
0
Propane Ethylene Acetylene
study, we targeted two small molecules, ethylene and acetylene, Fig. 1 χ value of ethylenepwhich are expected to be efficient sources of C2 and C2H. The and acetylene obtained in
the present study. Propane isexperimental setup is the same as our previous study [1].
shown for the comparison
Figure 1 shows the efficiency of polyyne production, where χp is anindex obtained by comparing the spectrum of the irradiated sample and C6H2
(a)ones from the size separated polyynes. It should be noted that χp does not
fs laserhave a quantitative physical meaning except being 0 and 1, but it is aCH
8 2measure of the preference in polyyne production. The value reached thens laserhighest in LIB with acetylene for both of ns and fs lasers. Between twolasers, fs laser gives higher values. In other words, fs laser irradiation toacetylene results in the highest selectivity of hydrogen-capped polyynes. 190
240
290
Wavelength (nm)Figure 2 (a) shows UV spectrum of the samples from ns laser (dashedC10H2line) and fs laser (solid line). As can be seen in the figure, longer polyynes are(b)more prominent in fs laser. Figure 2 (b) shows closer look of (a) around 260
Derivative
nm. It is noticeable that methyl-capped polyyne CH3C8H (247 nm) is produced
C12H2
in ns laser whereas hydrogen-capped polyyne (252 nm) is dominant in fs laser.
CH3C8H
It is considered that this contrast comes from the difference in fragmentation
230
260
290
of molecules during LIB in two lasers. Emission spectrum of the plasma
2 (a) UV Spectra
shows strong C2 swan band in both of lasers, indicating that the efficient Fig.
of irradiated samples
C2, and most likely C2H, formation results in the higher polyyne production. and (b) the same data
1

2

3

70

Abs. (arb. unit)

60
50
40
30
20
10
0

[1]. Taguchi, Y. et al., Carbon, 115, 169 (2017).
[2]. Sun, Y. L. et al., J. Phys. Chem. Lett., 6, 4117 (2015).
Corresponding Author: N. Takizawa Tel: +81-42-677-1111, Fax: +81-42-677-2525, Email: takizawa-nobuyuki@ed.tmu.ac.jp- 133 -

expanded around 260
nm. The absorbanceis normalized at 199
nm (C6H2).

3P-10Preparation of few-layered graphene using Graphite Intercalation
Compounds (GICs)○Yoshihisa Nanri1, Hiroshi Yoshitani2, Hiroji Fukui2, Akira Nakasuga2, Taro Kinumoto1, Tomoki Tsumura1,
Masahiro Toyoda1
1Department of Applied Chemistry, Graduate School of Engineering, Oita University,
700 Dannoharu, Oita 870-1124, Japan

Sekisui Chemical Co, LTD. 2-1 Hyakuyama, Shimamoto-cho, Mishima-gun, Osaka 530-8565, Japan

2

Introduction
Graphene exhibiting excellent conductivity and visible light transmission can be prepared using the Scotch tapemethod [1] or using the CVD method [2]; however, it is difficult to achieve large-scale production of grapheneusing these approaches. Hummers method [3] is based on the exfoliation of graphene oxide; however, it resultsin oxidation, which alters the characteristics of graphene oxide. In this study, few-layered graphene was preparedby adding water to the graphite intercalation compounds (GICs), which contained several planar layers ofcarbon-based hexagonal networks with negative charges as the reaction field. Further, GICs were exfoliated by
the addition of aldehyde, which contains an electron-withdrawing substituent, thereby yielding few-layered
graphene. The proposed technique facilitates the large-scale preparation of large area graphene with only a few
defects. Here, we have demonstrated the fabrication of graphene by the addition of an aldehyde solution to
K-tetrahydrofuran-GICs (K-THF-GICs) that were synthesized using the solution methods.

Materials and methods

A K-THF solution was prepared by dissolving naphthalene in THF and by further additionof potassium and stirring. Subsequently, K-THF-GICs were prepared by soaking theas-obtained graphite having a grain size of 100 µm in the prepared solution. Further,
few-layered graphene was prepared by the addition of an aldehyde solvent (having an
aromatic ring and alkyl chain of different lengths) to the K-THF-GICs and stirring. The
obtained graphene was further characterized using TEM and Raman spectroscopy.

Result and discussion

Fig. 1 TEM micrographs ofgraphene obtained by the
exfoliation of K-THF-GICs
in decanal solution.

Figs. 1 (a) and (b) denote the TEM micrographs of the graphene layers of the productsthat have been obtained using the proposed approach with decanal. These images
indicate that few-layered graphene was obtained in areas that have dozens of
micrometers of thickness and that have approximately three layers of lamination. Figs.
2(a) and (b) denote the Raman spectra of the as-obtained graphite and the graphene
layer products obtained using the proposed technique with decanal (i.e., the precipitate
in a decanal supernatant), respectively. The graphite spectrum exhibited a
two-dimensional (2D) band at around 2726 cm-1 while that of the product exhibited a
2D band at approximately 2693 cm-1, representing a red shift of the 2D band. Thisobservation indicates that the graphene contained five or less lamination layers.
Fig. 2 Raman spectra of (a) thegraphite used to prepare graphene andSuch a red shift of the 2D band could not be confirmed in case of low wavenumbers(b) the graphene product obtainedin precipitates formed using an aldehyde solvent. Therefore, it can be concluded thatusing the proposed approach.
it is possible to prepare few-layered graphene using decanal having long alkyl chainsinstead of the usage of an aldehyde solvent having aromatic rings and short alkyl chains.

References[1] K. S. Novoselov et al. “Electric field effect in atomically thin carbon films.”, Science, 306 (2004) 666-674[2] C. M. Orofeo et al. “Influence of Cu metal on the domain structure and carrier mobility in single-layer
graphene”, Carbon, 50 (2012) 2189-2196.
[3] W. S. Hummers and R. E. Offeman, “Preparation of Graphitic Oxide”, J. Am. Chem. Soc., 80 (1958) 1339.
Corresponding Author: M. Toyoda Tel/Fax: +81-97-554-7094, E-mail: toyoda22@oita-u.ac.jp- 134 -

3P-11
Attempt to produce dimetallofullerenes containing Yb with Ta○Yamashita Yusuke, Kazuhiro Kobayashi, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Intensity/arb.units

Yb-containing dimetallofullerenes, [Yb2@Cn]- and [MYb@Cn]- (M=Y,Sc), have neverbeen obtained [1]. The reason was considered that Yb can not take a trivalent state in a
fullerene cage because of its rather high ionization energy, which prevented the cage frombeing closed shell. Therefore, we tried to synthesize [HfYb@Cn]-, because Hf can take thelarger valence, +4. However, the formation of [HfYb@Cn]- could not be observed [2]. In thiswork, on the basis of these results, Ta was tried to be used instead of Hf, because Ta can takea possibility of the higher valence than Hf, such as +5.
The soot containing metallofullerenes was obtained by a direct-current arc discharge (60A) of Ta/Yb/C composite rods (Ta:Yb:C=1:1:98) under a 500 Torr He atmosphere. The raw
soot was extracted for 8h with a mixed solvent of triethylamine and acetone. The extract was
separated by HPLC using a Buckyprep column and acetone with an ion-pair reagent,
tetrabutylammonium bromide, as an eluent.
Fig. 1 shows the HPLC chromatogram of the extract. For all the fractions, LD-TOF-MS
spectra were measured, and no peaks assigned to Yb2Cn or TaYbCn were observed. (Inaddition, peaks assigned to TaCn or Ta2Cn could not be observed.) As a result, it was foundthat Ta can not play a role for controlling the charge in Yb-containing dimetallofullerenes.
To investigate an influence of ionization energy of encapsulated metal, we changed themetal from Yb to Sm which is known to take +2 oxidation state in Sm-monometallofullerenes
and has rather high ionization energy but lower than Yb. The results will be reported in thepresentation.

A
0

10

B

C D

20

30

E

F
40

50

Retention time/min
Fig. 1 HPLC chromatogram of the extract[1] K. Kobayashi, et al. The 52nd Fullerenes-Nanotubes-Graphene General Symposium128 (2017).
[2] K. Kobayashi, et al. The 11th Annual Meeting of Japan Society for Molecular Science 2P055 (2017).
Corresponding Author: Takeshi Kodama
Tel: +81-42-677-2530, Fax: +81-42-677-2525,
E-mail: kodama-takeshi@tmu.ac.jp- 135 -

3P-12
Attempt to produce dimetallofullerenes containing Eu○Yusuke Furiya, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama
Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan
So far, using the method combining the ion-pair chromatography with the mixed solvent
extraction, we succeeded in the isolation of Y2@C80(Ih)[1], Gd2@C80(Ih)[2], etc. as an anion
form, which are unstable in neutral form and have been known as “hidden” or “missing”
metallofullerenes. Recently, Kobayashi, et al. tried to produce Yb-dimetallofullerenes using
the same method, but Yb-dimetallofullerenes could not be obtained. The reason was thought
to come from the rather high ionization energy of Yb because the encapsulated metals usuallytake +3 oxidation state in dimetallofullerenes but it is hard to take +3 state for Yb. In thisstudy, we focused on Eu that has the ionization energy lower than Yb, and tried to produce
Eu-dimetallofullerenes. For Eu-metallofullerenes, the isolation of monometallofullerene,
Eu@Cn, has been reported[3], but there is no report on the dimetallofullerenes, Eu2@Cn.
First, we carried out the experiment for the system of only Eu and carbon, but no evidenceof the presence of Eu-metallofullerenes was obtained. Then, we move to the hetero metal
system. First, we carried out direct-current arc discharge of Eu/Y/C composite rods (Eu:Y:
C=1:1:98) under 500 Torr He atmosphere. The raw soot was extracted for 8h with a mixed
solvent of triethylamine and acetone. The extract was separated by HPLC using Buckyprep
column and acetone with an ion-pair reagent, tetrabutylammonium bromide, as an eluent.
Fig. 1 and 2 show HPLC chromatogram and LD-TOF-MS spectra of the fraction A, B, andC, respectively. In the fraction A, the peak of Y2C80, which should be Y2@C80(Ih), wasobserved, but no peak of EuYC80 and Eu2C80. Similarly, in the fraction B and C, the peak ofYCn (n=80, 82) and Y2Cn (n=78, 80) was obtained, but no peak of EuYCn and Eu2Cn.
Therefore, it was suggested that dimetallofullerenes containing Eu, EuY@Cn and Eu2@Cn,
were not produced in the raw soot or could not be extracted as an anion form by the present
method. In the symposium, we will report on the result for Eu and La hetero metal system.

Fig.1 HPLC chromatogram for the extract

Fig.2 LD-TOF-MS spectra of the fraction A, B and C[1] N. Nakatori, et al. The 49th Fullerenes-Nanotubes-Graphene General Symposium 46 (2015).
[2] T. Mitani, et al. The 50th Fullerenes-Nanotubes-Graphene General Symposium. 95(2016).
[3] Sun, B.Y. et al. J. Phys. Chem. B 108, 9011(2004).
Corresponding Author: Takeshi Kodama
Tel: +81-42-677-2530
Fax: +81-42-677-2525
E-mail: kodama-takeshi@tmu.ac.jp- 136 -

3P-13Temperature dependence of thermal conductivity of in-plane and out-ofplane directions in single-wall carbon nanotube thin film by periodic
heating method○Hiroyuki Matsuo 1, Yohei Yomogida 1, Takashi Yagi2, Kazuhiro Yanagi 1
1

2

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Department of Physics, National Institute of Advanced Industrial Science and Technology, Tsukuba,
Ibaraki,305-8563, Japan

In recent years, organic conductive polymers and carbon nanotubes have attracted a lot ofinterest as thermoelectric materials. It is important to evaluate their thermal conductivity in theirthin film form. We are evaluating of thermal conductivities of the in-plane and out-of-plane
directions in the single-wall carbon nanotube(SWCNTs) thin films by using periodic heating
method. This study investigated temperature dependence of thermal conductivities of the inplane and out-of-plane direction in the film to understand the characteristics of heat transportof anisotropic materials such as carbon nanotubes.
SWCNT films (MEIJO nano carbon ARCSO, Unpurified: metal / semiconductor mixed
sample) were dispersed into methanol and its free standing film was formed (thickness 54µm).
The thermal diffusivity was measured by spot-heating the sample surface with a laser(wavelength: 808 nm) and detecting the phase delay of radiation from the back surface while
controlling the temperature with the heater of the sample stage used by a vacuum chambercapable of liquid nitrogen cooling. Fig.1 shows the temperature dependence of the thermal
diffusivity and thermal conductivities in the in-plane and out-of-plane directions. The
thermal diffusivity in the both directions decreased as the increasing of temperature, but theslight difference is observed in
the curvature around 200 K.
The thermal conductivities ofin-plane direction, 8.7 Wm-1K1, was about 30 times larger
than that of the out-of-plane,
0.29 Wm-1K-1, at room
temperature. This result also
coincides with the values
obtained by the TDTR
method. Difference in the
behavioroftemperaturedependence in the in-plane andout-of-plane directions may
reflect
the
heat
flow
anisotropy of the SWCNT thinfilm, and we are currently
investigating in detail.
Corresponding Author: K. Yanagi,
Tel: ＋81-42-677-2494,
E-mail: yanagi-kazuhiro@tmu.ac.jp

Figure1：Temperature dependence of Thermal diffusivities in the (a) inplane and (b) out-of-plane directions of SWCNT thin film, and thermal
conductivity in the (c) in-plane and (d) out-of-plane directions- 137 -

3P-14
Simulation of Thermoelectric Properties ofCarbon Nanotube with Mechanical Deformation○Keiichiro Matsumoto 1, Takahiro Yamamoto 1,2
1

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
2
RIST, Tokyo University of Science, Tokyo 125-8585, Japan

Development of self-sustaining power sources is required to realize IoT (Internet ofThings) society. As one of these sources, thermoelectric generation is expected to be a key
technology for its realization. Hence, many studies have explored materials appropriate forthe thermoelectric generation devices. Among these materials, a carbon nanotube (CNT) has
attracted attention for flexible thermoelectric generation devices. In the CNT film, some of the
CNTs are considered to be dented and/or bent, and the previous study experimentallyconfirmed the existence of bent CNTs [1]. Moreover, other experimental studies have reported
that the thermoelectric properties vary when the CNT film is deformed by external forces[2,3]. However, the detailed influence of such mechanical deformations on thermoelectric
properties has not yet been clarified.
In the present study, we investigate thermoelectric properties of a dented (10,0)-CNT as
shown in Fig.1, using the non-equilibrium Green’s function method coupled with thetight-binding method. We calculate electrical conductance, Seebeck coefficient andthermoelectric power factor of the CNT. Our calculation shows that the Seebeck coefficient isalmost not affected by the dent while the electrical conductance and the thermoelectric power
factor are reduced. In addition, we reveal that the larger the dent of CNT is, the more theelectrical conductance and the thermoelectric power factor tends to decrease.

Fig.1 Schematic illustration of a dented (10,0) CNT[1] J. Bernholc et al. Annu. Rev. Mater. Res. 32, 347 (2002).
[2] H. E. Romeo et al. Phys. Rev. B. 65, 205410 (2002)[3] C. H. Hu et al. Appl. Phys. Lett. 93, 033108 (2008)
Corresponding Author: Takahiro Yamamoto
Tel&Fax: +81-3-5876-1486,
E-mail: takahiro@rs.tus.ac.jp- 138 -

3P-15
Numerical study of disappearance of localization phenomena at finite
temperature on electronic transport in a nitrogen-doped carbon nanotube○Keisuke Ishizeki1, Kenji Sasaoka2, Kengo Takashima1, Takahiro Yamamoto1,2
1

Department of Electrical Engineering, Tokyo University of Science, Tokyo 125-8585, Japan
Research Institute for Science and technology (RIST), Tokyo University of Science, Tokyo
162-8601, Japan

2

Impurity-doped semiconducting carbon nanotubes (CNTs) are expected to be used asmaterials of next-generation field effect transistors or thermoelectric devices owing to theirremarkable electrical properties. As electronic transport properties of a doped CNT arecharacterized mainly by impurity and phonon scatterings, previous theoretical studies
individually investigated their effects on electrical resistance. For example, in the previous
theoretical study, it is shown that conduction electrons localize in CNT and resistanceincreases exponentially with tube length (non-ohmic transport) when a CNT has impurities at
0K [1]. On the other hand, as temperature increases, it is expected that phonon suppresses
such localization phenomena, and that the transport property becomes ohmic transportbecause phase coherency disappears. However, the effects of phonon scattering on
suppression of localization phenomena have not been clarified.
In the present study, we investigated electronic transport properties in a nitrogen-doped(8,0)-single-walled CNT (SWCNT) at finite temperatures using the Open-TDSE with MD
simulation method developed in a previous study [2], which can simultaneously treat both
localization effects due to impurity scattering and quantum decoherence due to phonon
scattering. We confirmed that tube length
dependence of electrical resistance shows
exponential behavior in long length regime at 0 K(solid curve in Fig.1), while it shows linear
behavior in short length regime (dotted line in
Fig.1). On the other hand, resistance at 300 K
decreases compared to the one at 0 K and tube
length dependence of resistance shows linear
behavior even in long length regime (solid line in
Fig.1). This means that phonon scattering reducesphase coherence of conduction electrons. This
work is the first theoretical report to investigate
Fig.1. Tube length dependence of resistance of areduction of resistance of a nitrogen-doped CNT at nitrogen doped (8,0)-SWCNT with chemical
finite temperature originated from disappearance potential 0.75 eV at nitrogen concentrationof localization phenomena due to phonon 0.625 %.
scattering.
[1] R. Avriller, S. Latil, F. Triozon, X. Blase, S. Roche, Phys. Rev. B 74, 121406 (2006).
[2] K. Ishizeki, K. Sasaoka, S. Konabe, S. Satofumi, and T. Yamamoto., Phys. Rev. B 96, 035428 (2017).
Corresponding Author: T. Yamamoto
Tel: +81-3-5876-1486
E-mail: takahiro@rs.tus.ac.jp- 139 -

3P-16
Synthesis and structural analysis of cellulose nanofiber/CNT composites○Shiho Honda, Hsin-Hui Huang, Masamichi Yoshimura
Toyota Technological Institute, Nagoya 468-8511, Japan
1. Introduction
Recently, developing functional nanocomposites with the utilization of the sustainable
natural resources has been attracted attention in the field of composite materials.[1] Cellulose
nanofibers (CNF) are widely used as dispersants and strength additives. It is reported thatproperties such as electrical conductivity can be provided by combining with nanocarbons
such as carbon nanotubes (CNT).[2] In this study, we prepare a uniform and flexible
conductive film by adding CNT to CNF, and investigate the microstructure of the CNT-CNF
nanocomposite films.
2. Experimental
2 wt% CNF gel (Rheocrysta, DKS Co. Ltd.), functionalized (carboxylic acid) or
non-functionalized multiwalled CNT (f-MWCNT or MWCNT, Sigma-Aldrich) weresuspended in de-ionized water and sonicated for 150 min. Nanocomposite films were formedby vacuum-filtering the dispersion using various membrane filters, such as cellulose acetate(CA, 0.2 μm), polytetrafluoroethylene (PTFE, 0.2 μm), and polyvinylidene difluoride (PVDF,
0.1 μm). The films were prepared after freeze-drying or natural drying. The nanocomposite
films were finally fabricated by hot-pressing at a pressure of 10 MPa at 60 ℃ for 3 h.[3]These films are characterized by scanning electron microscopy (SEM), transmission electron
microscopy (TEM), atomic force microscopy (AFM), and Raman spectroscopy. The
conductivity is measured by four probe method.
3. Results and discussion
TEM images of the CNT-CNF composites showed
CNT mixed with CNF dispersed well, whereas CNT
were aggregated and its dispersibility was low in thesolution without CNF. Films prepared by freeze-drying
method showed non-uniform sheet resistance (70.8 ±
0.8 ~ 715.8 ± 25.7 Ωsq-1). On the other hand, we
obtained reproducible sheet resistance on the films
prepared by natural drying (47.6 ± 0.7 ~ 84.0 ± 3.0
Ωsq-1). Non-uniform sheet resistance is due to theFig.1 The sheet resistance before/aftervoids remained in the nanocomposite film in the
hot-pressing of nanocomposite films.
freeze-dried film. After drying, the nanocomposite film
could be peeled off only from PVDF membrane filter. Fig.1 shows the change in sheet
resistance with and without hot-pressing after natural drying. The sheet resistance decreasedby hot-pressing (f-MWCNT: 7~26%, MWCNT: ~20%). The present results suggest that thevoids decreased and the connection between the fibers increased after hot-pressing.
[1] C. Chen, M. Mo, W. Chen, M. Pan, Z. Xu, H. Wang, D. Li, Comp. Sci. Tech. 156 (2018) 103-108.
[2] Y. Wang, Z. Shao, F. Wang, W. Wang, R. Yang, European Polymer Journal 86 (2017) 85-93.
[3] H. Zhang, X. Sun, Z. Heng, Y. Chen, H. Zou, M. Liang, Ind. Eng. Chem. Res. 57, 50 (2018) 17152-17160.
Corresponding Author: M. Yoshimura
Tel: +81-52-809-1852, Fax: +81-52-809-1851, E-mail: sd18431@toyota-ti.ac.jp- 140 -

3P-17
Current response of DNN crystals/CNT thin film to hard X-ray○Satoshi Ishii 1, Satoru Suzuki 1, Takahiro Ishikawa 2, Teruaki Konishi 2, Tsuyoshi Hamano 2,
Jun Hirotani 3, Yutaka Ohno 3,4, Toshio Hirao 2
Department of Physics, Tokyo Denki University, Saitama 350-0394, Japan
National Institute for Radiological Sciences, National Institutes for Quantum andRadiological Science and Technology, Chiba 263-8555, Japan3
Department of Electronics, Nagoya University, Nagoya 464-8602, Japan
4
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan
1

2

Real-time dosimetry has been attracting much attention for the precise control of theirradiation dose on the radiotherapy for cancer. An organic semiconducting single crystal of
1,5-dinitronaphthalene (DNN) has been reported to show the direct detection of X-ray stably
at room temperature in air, together with the smaller X-ray attenuation than inorganic
semiconductor [1]. CNT is also known to have high radiation tolerance [2], and therefore
DNN crystals combined with the CNT thin film is expected to be applied for the wearable,
large-area and transparent real-time dosimeter of the radiotherapy. In this study, we havefabricated the DNN crystals supported on the carbon nanotube thin film (DNN crystals/CNT
thin film) and investigated its current response to hard X-ray.
Figure 1 shows the surface of the fabricated DNN crystals/CNT thin film. In the fabrication
process, an aqueous dispersion of DNN crystals was firstly prepared by dropping a
DNN/chloroform solution gently into deionized water using microsyringe with stirring. Then,the aqueous dispersion was dropped onto the surface of CNT thin film previously formed on
the PEN substrate by dip coating, followed by drying. In the irradiation experiment, a hard
X-ray (effective energy: 83 keV) was irradiated to the thin film, which was loaded in the
exposure vessel filled with N2 gas (50 kPa), from outside of the vessel at the dose rate of 36.1
mGy/sec. The current response of the thin film to X-ray wasmonitored under constant voltage conditions.
Figure 2 shows the current responses of the DNN
crystals/CNT thin film and the only CNT thin film to the
X-ray irradiation at an applied voltage of 6 V. For theirradiation, the current of the DNN crystals/CNT thin film wasincreased, although that of only CNT thin film was decreased.
Fig.1 SEM image of DNN
When the irradiation was turned off, the current of both films
crystals supported on the CNT
began to recover. The current increase of the DNN
thin film.
crystals/CNT thin film seems to originate from the electricalresponse of DNN crystals to X-ray.
DNN crystals / CNT
This work was supported partially by the joint usage/research
program of the Institute of Materials and Systems for Sustainability(IMaSS), Nagoya University.
[1] B. Fraboni et al., Faraday Discuss. 174, 219 (2014).
[2] C. D. Cress et al., IEEE Trans. Nucl. Sci. 57, 3040 (2010).
Corresponding Author: S. Ishii
Tel: +81-49-296-1926, Fax: +81-49-296-2915,
E-mail: s.ishii@mail.dendai.ac.jp- 141 -

On

Off

CNT

Fig.2 Current responses to thehard X-ray irradiation.

3P-18The collective effects of iron amount and annealing temperature of amagnesia underlayer for the highly efficient growth of single-wall carbon
nanotube forests○Takashi Tsuji, Guohai Chen, Kenji Hata, Don N. Futaba, Shunsuke Sakurai
CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan
Recently, we reported that magnesia (MgO) could be used as a catalyst underlayer forthe efficient growth of millimeter-scale single-wall carbon nanotube (SWCNT) forests with theappropriate thermal annealing to reduce the severe subsurface diffusion of iron (Fe) catalyst
into the underlayer [1]. In addition, excessive underlayer annealing led to excessive
crystallinity increasing which further suppressed catalyst subsurface diffusion and facilitate
Ostwald ripening. As a result, loss in single-wall selectivity (formation of multiwall CNTs
(MWCNTs)) occurred because of the formation of the larger particles from the excessive
surface-bound Fe [2]. These results suggest that high yield SWCNT forest growth using such
porous MgO underlayer requires a balance of surface-bound Fe as governed by the MgO
crystallinity/porosity and the initial amount of deposited Fe.
Here, we demonstrate the existence of a well-defined region for high yield SWCNT
forest growth in the domain of deposited Fe amount and MgO annealing temperature. Our
results show that the collective effects of these two factors govern the amount of surface-boundFe thus modulating both the CNT type (SWCNT, MWCNT) as well as the CNT yield [3]. Our
study for a range of deposited Fe thicknesses (1–2 nm) and MgO annealing temperatures (noannealing–950 °C) showed three distinctly defined regions: low yield SWCNT growth, highyield SWCNT growth and high yield MWCNT growth regions. Furthermore, characterization
by transmission electron microscope (TEM) revealed that the region for high yield SWCNT
growth was bound on one side by a low yield SWCNT border and on the other side by a
MWCNT border. Finally, we found that these two borders converged indicating that theallowable region for SWCNT growth for low MgO annealing temperature and high initial Fe
becomes narrow. Topographic examination by atomic force microscopy (AFM) revealed thatthe origin of this high efficiency and SWCNT selectivity results from the stable formation ofhigh density and small size of catalyst nanoparticles. This occurs due to the balance between thedeposited Fe amount and the reduction in Fe subsurface diffusion into underlayer caused by theannealing of MgO underlayers. We believe that this work provides a general understanding for
all catalyst/underlayer systems to achieve high yield single-wall carbon nanotube synthesis.
[1] T. Tsuji et al. J. Am. Chem. Soc. 138, 16608 (2016).
[2] T. Tsuji et al. Nanoscale 9, 17617 (2017).
[3] T. Tsuji et al. MRS Adv. accepted.
Corresponding Author: S. Sakurai
Tel: +81-29-861-4654, Fax: +81-29-861-4851,
E-mail: takashi.tsuji@aist.go.jp- 142 -

3P-19
Molecular Dynamics Simulation of SWCNT Growth from Seed Tube-Wallswith Various Chiralities○Kanau Mukai1, Ryo Yoshikawa1, Kaoru Hisama1, Kakeru Hashimoto1,
Shohei Chiashi1 and Shigeo Maruyama1,2
12

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan

It is highly important to understand the growth mechanism for structural control ofsingle-walled carbon nanotubes (SWCNTs). Numerical simulation is suitable for observation
in atomic scale, so we performed molecular dynamics (MD) simulations and analyzed
SWCNT growth. We applied bond order potentials [1] and Lennard-Jones potential torepresent the interaction among atoms, and observed defect-free growth of SWCNT from purecatalyst [2]. To study differences in growth of SWCNT with different chiralities ordiameters, we prepared metal clusters connected with SWCNT sidewalls (seed tube-walls) as
the initial structure. Then, we supplied them with carbon atoms with constant number (n) in
the fully periodic cell (101010 nm3), and the growth of SWCNT from seed tube-wall wasobserved.
We used two types of metal catalysts, Co60 and Fe80. We connected four types of seedtube-walls ((9, 8), (12, 4), (14, 1), and (15, 0)) to the Co catalyst and three types of seedtube-walls ((9, 1), (11, 1), and (15, 1)) to the Fe catalyst, and observed their elongation. On
the Co catalyst, the interface between the near-armchair SWCNT and the catalyst became
oblique to the axial direction of the SWCNT, and the edges changed to zigzag edges. Besides,
defect structures were formed and the chirality of SWCNT changed toward zigzag. SWCNT
with (9, 8) and (12, 4) suffered from a lot of defects and bent. On the other hand, we observed
the defect-free side walls in the growth of SWCNT with (14, 1) and (15, 0). On the Fe catalyst,
the kink growth of near-zigzag SWCNT was observed. Moreover, we found that (11, 1) was
the structure with the least defect. The diameter of the SWCNT with (11, 1) was close to thediameter of the catalyst.
(a)

(b)

(c)

Fig. 1. (a) Connection of seed tube-wall and metal catalyst. The blue atoms are Fe, and theothers are C. (b) SWCNT growth from (11, 1) seed tube-wall on Fe80 at 1100 K. (c)Developed view of (b). The pink area is seed tube-wall with (11, 1) which we prepared. The
blue area grew newly by our MD simulation.
[1] K. Hisama et al., J. Phys. Chem. C, 2018, 122, pp 9648. [2] R.Yoshikawa et al., submitted.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421 Fax: +81-3-5800-6983 E-mail: maruyama@photon.t.u-tokyo.ac.jp- 143 -

3P-20Influence of alumina buffer layer on production ofcarbon nanotube black coating film
○Taishi Yamashita 1,2 , Hiromichi Watanabe 2, Takaya Akashi 3
1Graduate School of Science and Engineering, Hosei University, Koganei 184-8584, Japan
Research Institute for Material and Chemical Measurement, National Institute of Advanced
Industrial Science and Technology (AIST), AIST Tsukuba Central 3, 1-1-1
3Faculty of Bioscience and Applied Chemistry, Hosei University, Koganei 184-8584, Japan

2

Carbon nanotubes (CNTs) can be applied as an optical / thermal absorption media forblack-body radiation source and optical baffle, because of their extremely high emissivity. In
the CNT growth process based on a chemical vapor deposition (CVD) method, carbon
nanotubes are grown on a substrate by thermally decomposing a hydrocarbon gas with theassistance of metal fine particles used as the CNT catalyst. Generally, the carrier layer isformed by electron beam vacuum evaporation, but it is an obstacle to applying CNT as a
blackbody radiation light source or light shielding material to costly and time-consuming toform a film on the surface of a three-dimensional object by this type of physical vapor
deposition (PVD) method. We have proposed a method of depositing such a support layer by
shot-blast (SB) processing that can be easily performed in the atmosphere[1].This method
merely blows alumina fine particles at high speed onto the surface of the substrate withcompressed air, and also has the advantage of enabling film formation on the entire surface of
three-dimensional object against the PVD methods that require high-vacuum conditions. In
this study, we compare the structures and characteristics of the alumina layers formed byelectron beam evaporation and SB processing to evaluate the features and superiorities ofcatalyst-support layer formation methods.
In this work, W and Si coupons were used as the substrates for the deposition of alumina
buffer layer and then CNT array. On a face of each of substrates, three kinds of alumina layer
sections were established by the SB processing with alumina fine particles and by electron
beam vacuum evaporation using Al and α-Al2O3 as the evaporation sources, respectively.
Figure 1 shows the measurement results of the spectral reflectance in the visible region atroom temperature of CNT grown by CVD method in which ferrocene and acetylene are usedas the catalyst precursor and carbon source,
respectively on both the alumina layers. The
CNTs on the alumina buffer layers by electron
beam vacuum evaporation using α-Al2O3 as theevaporation source and by the SB processing
have exhibited the lowest reflectance, whichindicates that the alumina layer produced by the
SB processing is functioning sufficiently as thecatalyst-support one, as well as that produced by
the standard method is.

Fig.1. The reflectance spectra of CNT arrays formedon the three kinds of alumina buffer layers.
[1] H. Watanabe, J. Ishii, and K. Ota: Nanotechnology 27 (2016) 335605.
Corresponding Author: H. Watanabe
Tel: 042-387-6257, Fax: 042-387-7002,
E-mail: taishi.yamashita.8i@stu.hosei.ac.jp- 144 -

3P-21
Relation between growth conditions and growth profiles of individual
SWNTs studied by digital isotope labeling○Shun Yamamoto1, Bunsho Koyano1, Shota Hiraoka1, Kaoru Hisama1, Keigo Otsuka2,3, Taiki
Inoue1, Rong Xiang1, Shohei Chiashi1, Shigeo Maruyama1,4
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
Quantum Optoelectronics Research Team, Riken Center for Advanced Photonics, Wako,
351-0198, Japan
3
Nanoscale Quantum Photonics Laboratory, Riken Cluster for Pioneering Research, Wako,
351-0198, Japan
4
Energy NanoEngineering Lab, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, 305-8564, Japan
2

Single-walled carbon nanotubes (SWNTs) are highly expected toward the applications ofelectronic devices. Time-dependent growth of SWNTs has been investigated extensively forunderstanding the growth mechanism. However, most of the studies focused on growth curvesof SWNT ensembles and did not discuss individual differences of SWNTs. Growth curves ofindividual SWNTs were obtained only for small numbers of short SWNTs [1]. Recently, wedeveloped a new method for tracing time-resolved growth profiles of individual, long SWNTs
by embedding digitally-coded isotope labels [2].
In this report, we investigated growth profiles of individual SWNTs in a wide range oftemperature using iron or cobalt as catalyst on quartz substrates. We synthesized SWNTs fromethanol with addition of 13C ethanol as labels and obtained growth curves by detecting the labels
along each SWNT with Raman mapping (Fig. 1(a)). Comparison of growth curves and Raman
RBM peaks reveals that the smaller the SWNT diameter is, the faster the growth rate is (Fig.
1(b)), and the growth rate does not depend on chiral angle (Fig. 1(c)). We changed temperatureduring synthesis (Fig. 1(d)) and examined activation energies using the Arrhenius plot. We also
calculated thermal decomposition of ethanol under the growth conditions by COMSOL (Fig.
1(e)) and discussed the relation between the growth profiles and the feedstock composition.

Fig. 1 (a) Raman mapping image colored by the shifts of G-band peaks. Growth rates plotted against (b) diameterand (c) chiral angle. (d) Growth curves of SWNTs grown at rising temperature (bottom) and temperature profileof this experiment (top). (e) Decomposition of ethanol with Ar/H2 calculated with a zero-dimensional model. (*Mole fraction is determined without Ar).
[1] R. Rao et al., Nat. Mater. 11, 213 (2012). [2] K. Otsuka, S. Yamamoto et al., ACS Nano 12, 3994 (2018).
Corresponding Author: S. Maruyama Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 145 -

3P-22Growth and transfer of one-dimensional heterostructures○Yongjia Zheng1, Rong Xiang1, Taiki Inoue1, Yang Qian1, Ming Liu1, Shohei Chiashi1,
Esko I. Kauppinen2, Shigeo Maruyama1,3
12

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Applied Physics, Aalto University School of Science, PO Box 15100, FI-00076
Aalto, Finland
3
Energy NanoEngineering Lab., National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba. 305-8564, Japan

In recent years researchers have focused on two-dimensional van der Waals heterostructures(vdWH), which have generated great interests recently due to the possibility of combining diverse
atomic layers to create novel materials and devices [1-2]. In this work, we demonstrate a new onedimensional vdWH nanotube structure with similar heterostructure interfaces that combines the
single-walled carbon nanotubes (SWCNTs), boron nitride nanotubes (BNNTs) and molybdenum
disulfide nanotubes (MSNTs) in the radial direction (Fig. 1a-b) [3]. Techniques involving direct
growth of 1D vdWH by chemical vapor deposition (CVD) will be presented in detail. In addition,
we developed a method to transfer the suspended 1D vdWH nanotubes (Fig. 1c-e) to other substrate,
making the characterization and application more achievable.

Fig. 1: (a) 3D model of the coaxial structure that combines the SWCNTs, BNNTs and MSNTs in
the radial direction. (b) Diagram of transfer of suspended nanotubes onto another substrates. (c)TEM image of a 5 nm diameter ternary nanotubes consisting 1 SWNT, 3 layers of BN and 1 layer
MoS2 nanotube. (d) & (e) SEM images of 1D vdWH nanotubes transferred onto a gold surface for
Tip-enhanced Raman spectroscopy (TERS).
Corresponding Author: S. Maruyama[1] A. K. Geim et al., Nature, 499, 7459 (2013).
Tel:BN
+81-3-5841-6421,
Left plot is Raman spectra of SWCNTs/BNNTs with different
growing time; Right plot is Raman[2] K. S. Novoselov et al., Science, 353, 6298 (2016).
spectra of SWCNTs/BNNTs before and after MoS2 growing.
(b)
Absorbanceof SWCNTs before andFax: +81-3-5841-6983,[3]afterR. Xiang
et al.,
arXiv:1807.06154
BN andMoS
2 growing. (c) Optical images show how a SWCNTs film changes after BN andE-mail: maruyama@photon.t.u -tokyo.ac.jp
MoS2 growing. (d) TEM image and (e) EELS mapping of a 5 nm diameter ternary nanotubes
consisting one layer of carbon, three layers of BN and one layer MoS 2 nanotube. Scale bar, 5 nm.

- 146 -

3P-23
Study on one-dimensional stacking structure of polycyclic aromatichydrocarbon molecules encapsulated in single-walled carbon nanotubes bymolecular dynamics simulations○Ryo Nagai1, Yosuke Kataoka3 and Hironori Ogata 1,2
Graduate School of Sci. and Engin., Hosei University, Koganei, 184-8584, Japan
2
Research Center for Micro-Nano Technology, Hosei University, Koganei, 184-0003, Japan
3
Research Center for Computing and Multimedia Studies, Hosei University, Koganei,
184-8584, Japan
1

Carbon nanotubes (CNTs) are one of the most promising materials due to their superior
electronic, thermal and mechanical properties. Single-walled carbon nanotubes (SWNTs)
have hollow spaces of about several nm in diameter. Various functional molecules such as
fullerenes can be encapsulated in the hollow space, and it is expected that new functions will
be developed by capsulation. It has been reported that columnar layered polycyclic aromatichydrocarbon (PAH) molecules such as coronene encapsulated in SWNTs can exhibit uniqueluminescence properties depending on their molecular orientations. We have been investigat-ed the local structures and properties of various kinds of PAH molecules encapsulated in
SWNTs systematically. In this study, molecular dynamics simulations were performed toclarify the condition (molecular structure and symmetry of molecule, chiral vector of SWNT,etc.) under which the PAH molecules(perylene, corannulene or coronene) encapsulated in
SWNTs take a one-dimensional stacking structure. From the calculation results, it was foundthat coronene has the widest in the chiral vector region having a one-dimensional stacking
structure. Detailed results will be discussed at the conference.

References:[1] Miho Fujihara, et al., J. Phys. Chem. C 116(2012)15141−15145.
[2] Alexander I. Chernov et al., Phys. Status Solidi B 251(2014)2372–2377.
[3] Y. Sakane, et al., AIP ADVANCES 5 (2015)117113.
[4] Y.Joko, et al., Phys. Chem. Chem. Phys.19(2017)27704-27715.
[5] T.Koyama, et al., J.Phys. Chem. C 122(2018)5805-5812.
Corresponding Author: H. Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229, E-mail: hogata@hosei.ac.jp- 147 -

3P-24
Strain Effect of Single-Walled Carbon Nanotubes Encapsulated
in BN Nanotubes○Tatsurou Ogamoto1, Satoshi Yotsumoto1, Rong Xiang1, Taiki Inoue1, Shohei Chiashi1,
Shigeo Maruyama1,2
1
Department of Mechanical Engineering, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku,
Tokyo, Japan
2
Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba
Single-walled carbon nanotube (SWCNT) attracts much attention owing to its electricaland mechanical properties. In order to make the best of SWCNTs, it is important to optimize
the surrounding conditions around SWCNTs because their electrical properties easily change
depending on the environment. Hexagonal boron nitride (h-BN) has been regarded as an ideal
substrate because it has flatter surface and less charge traps than SiO2 [1]. Additionally, fromapplication viewpoints, SWCNTs coaxially coated with boron nitride nanotubes (BNNTs) arethought to be more versatile. However, the properties of SWCNTs encapsulated in BNNTs areveiled and the effects of BNNTs on SWCNTs are unknown, so we study the influence of
BNNTs on the encapsulated SWCNTs byusing optical measurement.
Suspended SWCNTs were grown by CVD
method and then BNNTs were synthesizedaround SWCNTs by CVD method at hightemperature (1100℃) [2]. SEM image in Fig.
1(a) shows that the BN-coating is not uniform
along the tube axis. The some parts of
SWCNT are coated with BN layer (position 1)
and they exhibit the G-band downshift, asshown in Fig. 1(b). The downshift means that
BN-coated parts of SWCNT are extended.
Assuming that the both ends of SWCNT are

Fig. 1 (a) SEM image of suspended SWCNT afterh-BN coating. (b) Raman spectrum of position 1
and position 2.

fixed, the extension of the BN-coated
SWCNT parts explains the bending in theuncoated part, as shown in Fig. 2.
[1] C. R. Dean et al., Nat. Nanotechnol. 5, 722 (2010).
[2] R. Xiang et al., arXiv :1807.06154.
Corresponding Author: S. Maruyama.
Tel: +81-3-5841-6421
E-mail: maruyama@photon.t.u-tokyo.ac.jp

Fig. 2 Schematic drawing of mechanism ofgeneration of strain.

- 148 -

3P-25Thickness-selective exfoliation and extraction ofgraphene using pyrene-based nanocalipers○Alejandro López-Moreno, and Naoki Komatsu
Graduate School of Human and Environmental Studies, Kyoto University, 606-8501 Kyoto
A number of physical and chemical methods
have been developed to obtain high quality
graphene. On the other hand, we have developed
host-guest methodology to separate carbon
nanotubes according to the diameter, handedness
and even metallicity [1]. In this paper, we
synthesized two
kindof pyrene-based
nanocalipers with pyrene (1) and anthracene (2)as spacer (Figure 1) and applied them to theexfoliation and extraction of graphene.

Figure 2 a) UV-vis spectra of the supernatants after
96 h sonication followed by centrifugation without
nanocalipers (black), and with 1 (grey) and 2(dashed black). Inset: Graphene concentration vssonication time with 1 (black dot) and without
nanocaliper (white dot). b) AFM micrographs ofgraphene and histogram exfoliated with 1 (left) and2 (right).

Figure1

nanocalipers

Structure

of

with

pyrenepyrene-based
(1)

and

anthracene (2) as spacer.

In the extraction, graphite and thenanocalipers were sonicated in methanol for 96
hours. After centrifugation, the resultant black
supernatant was analyzed by UV-vis andRaman spectroscopies, and AFM. The upward
shifts of the baseline in UV-vis spectra (Figure2a) imply the exfoliation and extraction ofgraphene with both 1 and 2. The AFM shownin Figure 2b reveals the existence of graphenewith different thickness with 1 and 2. While
thicker graphenes with an average thickness of
1.6 ± 0.7 nm corresponding to 4 layers are
extracted with 1, nanocalipers 2 having
narrower cavity gave graphenes with lessthickness of 0.9 ± 0.3 nm corresponding to 2
layers. With respect to the sizes, larger flakes
were obtained using 1, obtaining flakes of 51 ±14 nm and 32 ± 7 nm for 1 and 2 respectively.
Based on the extinction coefficient of graphene
at 600 nm, the concentration was monitoredaccording to the sonication time as shown in
Figure 2b.
Increase of the graphene
concentration up to 0.13 mg·ml-1 and 0.14
mg·ml-1 for 1 and 2 respectively was observed,
but no exfoliation was occurred in the absenceof host molecules.

[1] G. Liu, A. F. M. M. Rahman, S. Chaunchaiyakul, T. Kimura, Y. Kuwahara, N. Komatsu, Chem. Eur. J. 19,
16221 (2013); G. Liu, Y. Miyake, N. Komatsu, Org. Chem. Front., 4, 911 (2017).
Corresponding Author: A. López-Moreno Tel: +75-753-7871, E-mail: lopez.alejandro.74a@st.kyoto-u.ac.jp- 149 -

3P-26
Electrostatic actuation of mechanically coupled graphene mechanicalresonators○Keisuke Akazawa, Yuta Mochizuki, Taichi Inoue, Daiki Yoshikawa, Kuniharu Takei,
Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai 599-8531, Japan

Acknowledgements This work was partially supported by
KAKENHI Grant Numbers 15H05869, 16H00920, 16K14259,
16H06504, and 17H01040.
Corresponding Author: K. Akazawa, Tel: +81-72-254- 9261,
E-mail: akazawa-4@pe.osakafu-u.ac.jp- 150 -

Optical fiber
PMT

Optical microscope

Probe Laser Half
(521 nm) mirror

CCD
Dichroic
mirrorSig.

×50 Obj.
Lock-in-amp.

LPF

Fig. 1 Measurement setup

G-MR A
G-MR B
Resonance frequency
11.15 MHz
Resonance frequency
5 µm
8.08 MHz

Fig. 2 SEM image of the grapheneresonator and the laser position

0.012

Amplitude (a.u.)Graphene is suitable for high performancemechanical resonator (MR) because of extremely
low mass and high Young’s modulus. Coupledmechanical resonators are one of emerging
components for ultralow power information
processing mimicking the superposition of states.
Here, we demonstrate the coupled MRs consisting of
two drum-type graphene MRs (G-MRs) connectedwith a graphene bridge.
Figure 2 shows the G-MRs coupled with agraphene bridge with a width of 2 m, where the radiiof the fabricated G-MRs was 3 m. Both G-MR A
and G-MR B were driven by the electrostatic
actuation. The resonance properties of each G-MRs
were individually measured using laser with awavelength of 521 nm as indicated by green arrows
in Fig. 2. When both of G-MRs were actuated, we
irradiate another laser with a wavelength of 660 nm
as indicated by a pink arrow in Fig. 2.
The resonances of both of G-MRs weresuccessfully observed by electrostatic actuation. The
resonance frequencies of G-MR A and B are 11.15
and 8.08 MHz, respectively, where the quality factors
for both G-MRs are ~ 200. Figures 3 shows thechange in amplitude of G-MR A when G-MR B isirradiated the laser with a wavelength of 660nm
when the frequency is fixed at 11.15 MHz which is
the resonance frequency of G-MR A. The amplitudeof the G-MR A decreased by irradiating the laser tothe G-MR B while driving the G-MR A. These
indicate that the two G-MRs are mechanicallycoupled through the graphene bridge.

0 µW

0.01

100 µW

0.008

500 µW

0.006
0.004

1000 µW

0.002
0

0

8

16

24

32

Time (sec)

40

48

56

Fig. 3 Change in amplitude of G-MR A
when G-MR B is irradiated the laser witha wavelength of 660 nm when thefrequency is fixed at 11.15 MHz.

3P-27Mass sensing of Q-dots using graphene mechanical resonator○Masashi Hori, Yuta Mochizuki, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University,
Sakai 599-8531, Japan
Graphene is widely applied to highly
sensitive mass sensor based on nanomechanical resonator (MR) because of its
excellent electrical and mechanicalproperties. In order to append additional
functionality, decoration of graphene withfunctional nanoparticle such as quantum dot(Q-dot) as shown in Fig. 1 is one ofpromising routes. In this case, number of Qdots on the graphene is very curial
information for the analysis. Here, weestimate the number of Q-dots on thegraphene-MR (G-MR) from the resonancefrequency shift.
Figure 2 shows a fluorescence image ofa drum G-MR decorated with Q-dots.
Several aggregated Q-dots are observed on
the G-MR region, where the number of Qdots on G-MR can be roughly controlled by
the time for attachment process.
Figure 3 shows a resonance curve of the
G-MR before and after the decoration of Qdots. The resonance frequency downshifts
from 11.2 to 7.8 MHz. This frequency shiftcorresponds to the mass of ~830 Q-dots.
Thus, we have successfully confirmed thatthe resonance frequency was lowered due toadhesion of nanoparticles. In addition, we
believe that G-MR is effective as
nanoparticles detection and mass sensor.

- 151 -

Fig. 1 Graphene resonator decorated with Q-dot.

Fig. 2 Fluorescence microscope image of Q-dot on
the G-MR

Fig. 3 Resonance curve of the (b) G-MR decorated
with Q-dot measured and (a) normal G-MR in
vacuum.
Acknowledgements This work was partially
supported by KAKENHI Grant Numbers 16H00920,
16K14259, 16H06504, and 17H01040.
Corresponding Author: M. Hori, Tel: +81-72-2549261, E-mail: hori-4@pe.osakafu-u.ac.jp

3P-28Ultra-fast and on-chip graphene blackbody emitters○Kenta Nakagawa1,2, Yusuke Fukazawa2, Yusuke Miyoshi2, Yuya Amasaka2,
Robin Reckmann2,3, Tomoya Yokoi2, Kenji Kawahara4, Hiroki Ago4 and Hideyuki Maki2,5
1

Kanagawa Institute of Industrial Science and Technology (KISTEC), Kanagawa 243-0435,
Japan
2
Department of Applied Physics and Physico-Informatics, Keio University, Kanagawa
223-8522, Japan
3
Faculty of Electrical Engineering and Information Technology, RWTH Aachen University,
Aachen 52074, Germany
4
Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan
5
PRESTO JST, Saitama 332-0012, Japan

Nanocarbon-based optoelectronic devices are promising candidates for the high-speed
and on-chip optical communication devices such as light sources [1-4]. In this study, wedeveloped a blackbody emitter based on graphene in near-infrared region including
telecommunication wavelength (Fig. (a)). An ultra-fast response time of ~100 ps,
corresponds to ~10 GHz modulation under a rectangular voltage has been experimentallydemonstrated (Fig. (b)). Theoretically calculation of the heat conduction equations
considering the thermal model of the emitters including graphene and a substrate revealed thatthe fast modulation can be understood by remote quantum thermal transport via surface polar
phonons of the substrates.
Moreover, the optical communications, integrated
two-dimensional array emitters with a chemical vapor deposition grown graphene, capped
emitters operable in air, and the direct coupling of optical fibers to the emitters are also
demonstrated. Recently, we found the visible light emission from the graphene emitters byincreasing the number of graphene layers and the applied voltage (Fig. (c)).

Fig. (a) Schematic image of the graphene light emitter. (b) Time-resolved emission from the graphene under
1 and 10 ns rectangular bias voltages. (c) Visible camera image of an emission from the graphene light emitter.
[1] N. Hibino, S. Suzuki, H. Wakahara, Y. Kobayashi, T. Sato & H. Maki, ACS Nano, 5, 1215 (2011).
[2] M. Fujiwara, D. Tsuya & H. Maki, Appl. Phys. Lett., 103, 143122 (2013).
[3] T. Mori, Y. Yamauchi, S. Honda & H. Maki, Nano Lett., 14, 3277 (2014).
[4] Y. Miyoshi, Y. Fukazawa, Y. Amasaka, R. Reckmann, T. Yokoi, K. Ishida, K. Kawahara, H. Ago & H. Maki,Nat. Commun., 9, 1279 (2018).
Corresponding Author: Prof. Dr. H. Maki
Tel: +81-45-566-1643, Fax: +81-45-566-1587,
E-mail: maki@appi.keio.ac.jp- 152 -

3P-29Fabrication of high quality graphene nanoribbons
using silver nanowires for energy gap opening○Kensuke Aoki 1, Nobuyuki Aoki 1
1

Department of Materials Science,Chiba University , Chiba 263-8522, Japan[1] X. Wang et al., PRL 100, 206803 (2008)[2] M. Y. Han et al., PRL 98, 206805 (2007)
Corresponding Author: N. Aoki
Tel: +81-4-3290-3430, Fax: +81-4-3290-3427,
E-mail: n-aoki@faculty.chiba-u.jp

Resistance [M]

In order to apply graphene as a field effect transistor (FET), an energy gap must be
introduced. To convert graphene into nanoribbons is one method of introducing energy gap
opening. [1]However, when graphene nanoribbons (GNR) samples are fabricated by the top-down
method, generally advanced techniques such as electron beam lithography are required, whichis unsuitable for industrial application. In addition, the edge property of the GNR becomesnonuniform when using a resist for electron beam lithography as an etching mask, and we
expect that a uniform energy gap is not introduced throughout the GNR.
Therefore, we fabricated GNR FET samples by using silver nanowires (AgNW) as an
etching mask. The diameter of AgNW is 30 [nm]. We expect that the edge property of GNR isnearly uniform because AgNW used as an etching mask is a single crystal whose surface issmooth. Fig.1 shows the result of observation
with atomic force microscope (AFM).
Although AgNW still remained on theobtained GNR, it was observed that GNR
having a uniform width of about 30 [nm] wasformed.
Next, the gate voltage dependence of theelectric resistance at each temperature isshown in Fig.2. As shown in Fig. 2, a
semiconductor behavior that the resistancevalue increases as the temperature decreases
Topographic AFM image and line profile of
was observed. Also, Arrhenius plot was taken Fig.1
GNR on SiO2/Si substrate
against the resistance and the energy gap was
calculated to be 2.7 [meV]. This value was in35
good agreement with other papers [2]. Detailsof the fabrication method and observation
30
results using Raman scattering spectroscopy
300 [K]25
100 [K]
will be discussed on that day.
20
15 [K]
15
10
5
0-20 -15 -10-50
5VBG [V]

10

15

20

Fig.2 Resistance curves as a function of gate voltage
at different temperatures- 153 -

3P-30Ab initio study on magnetism in double-layered graphenewith acetylenic crosslinks
Hiroyuki Yokoi
Department of Materials Science and Engineering, Faculty of Advanced Science andTechnology, Kumamoto University, Kumamoto 860-8555, Japan
Emergence of magnetism in graphene has been investigated intensively through boththeoretical and experimental approaches. It has been reported that structural modifications to
the honeycomb lattice, including the formation of pores and the adsorption of hydrogen atoms,
could generate half-filled localized states and induce magnetic moments. In these cases, it isessential to apply the modification to carbon atoms at the same type of sites (so called A-siteor B-site) as the magnetic moment induced by modifications at A-site are canceled by that at
B-site.
In the previous study [1], we have proposed a new class of structural modification ofgraphene, where two layers of graphene are cross-linked with ethylene groups. This
modification does not induce magnetic moments basically as each ethylenic crosslink
modifies carbon atoms at both A –site and B-site inevitably. However, we have found throughab initio calculations in 6x6 hexagonal supercell models that the magnetic moment of 2B is
induced in a structure where six ethylenic crosslinks align circularly to surround twelve atomsof carbon on each sheet. In this configuration, the differential spin density is distributed overthus surrounded twenty four carbon atoms on both graphene sheets and the twelve carbon
atoms on the six ethylenic crosslinks. If just one of the six crosslinks was missing, themagnetic moment disappeared. Therefore, we expected that quantum confinement of a 
network with ethylenic crosslinks might favor the emergence of the localized magnetic
moments.
In this study, we investigated the electronic states in double-layered graphene linked withacetylenic bridges through ab initio calculations. The supercell was set to a 6x6 hexagonallattice. We have found that acetylenic crosslinks at the same type of sites induce the magnetic
moment of about 2B a crosslink and the magnetic moment induced by a crosslink at A-site iscanceled by that at B-site, which is similar to the case of the conventional modifications. In astructure where six acetylenic crosslinks align circularly to surround six carbon atoms on each
sheet, the numbers of modified carbon atoms at A-sites and B-sites became equal and nomagnetic moment was induced. The quantum confinement of a  network seemed ineffective
to induce a magnetic moment in this configuration. We calculated the energy band structure
for this structural model and found that the local state generated by the confinement situatesaway from the Fermi level. This result suggests that tuning of the energy of the local state
induced by the confinement to the Fermi level could be essential to the emergence ofmagnetism in double-layered graphene with crosslinks.
[1] H. Yokoi, 54th Fullerenes-Nanotubes-Graphene General Symposium (Tokyo, March, 2018)
Corresponding Author: H. Yokoi
Tel: +81-96-342-3727, Fax: +81-96-342-3710,
E-mail: yokoihr@kumamoto-u.ac.jp- 154 -

3P-31Gold-Mediated Growth of Few-Layer Molybdenum Disulfide○ Hong En Lim1, Toshifumi Irisawa2, Naoya Okada2, Takahiko Endo1, Yutaka Maniwa1,
Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Scienceand Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

Atomically thin layers of transition metal dichalcogenides (TMDCs) are attractive for theirsizeable bandgap and strong light matter interaction features, making them popular for futurenano-optoelectronic devices [1, 2]. Present growth of these ultrathin layers frequently uses
chemical vapor deposition (CVD). However, this process inevitably results in a random growth
all over the substrate, which complicates device fabrication. A controlled growth of the TMDCs
at desired position is thus important in aiding the design of functional devices.
Herein, we report a position-specific synthesis of few-layer molybdenum disulfides (MoS2)
with pre-patterned gold (Au) blocks. The Au patterns were first deposited onto SiO2/Si
substrates with resistive heating, and the MoS2 was subsequently grown by alkali metal halideassisted CVD growth [3]. In this way, few-layer MoS2 is found to grow underneath the gold
patterns, as observed from the cross-section transmission electron microscope image shown in
Fig. 1a. Dissolving the Au on top leaves the bottom MoS2 behind (Fig. 1b), which gives thecharacteristic E12g and A1g Raman vibration peaks at 384 and 407 cm-1, respectively (Fig. 1c)[4]. The PL spectrum obtained is presented in Fig. 1d. This provides a simple and yet usefulmeans for the potential assembly of these ultrathin sheets into sophisticated nanodevices suchas monolithic 3D integrated digital circuits [5].
b

c
MoS2

MoS2
SiO2

6

4

A1g

d

Intensity x 102 / counts

Au

Intensity x 103 / counts

a

15

E12g

10

2

0
350

375

400

425

Raman shifts / cm-1

450

5

0
1.6

1.8

2.0

Energy / eV

2.2

Fig.1 (a) Cross-section transmission electron miscroscope (TEM) image of the MoS 2 grown with Au-patterned
SiO2/Si substrate. Arrows indicate the MoS2 layers. (b) Optical image of the MoS2 obtained after Au removal(square area). (c) Raman and (d) PL spectra taken at region after Au removal. Scale bars are (a) 5 nm and (b) 50
μm.
[1] Q. H. Wang et al. Nat. Nano 7, 699-712 (2012).
[3] S. Li et al. Appl. Mater. Today 1, 60-66 (2015).
[5] A. B. Sachid et al. Adv. Mater. 28, 2547-54 (2016).

[2] X. Xu et al. Nat. Phys. 10, 343-350 (2014).
[4] H. Li et al. Adv. Func. Mat. 22, 1385-90 (2012).

Corresponding Authors: H. E. Lim, Y. Miyata

E-mail: lim@tmu.ac.jp, miyata-yasumitsu@tmu.ac.jp
Tel: +81-42-677-2508- 155 -

3P-32Controlling temperature and sulfur addition for synthesis of thin WS2 nanotubes○Yohei Yomogida and Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Drain current (A)Tungsten disulfide (WS2) nanotubes are cylindrical multiwall nanotubes of WS2 sheets. WS2
nanotubes exhibit only semiconducting characteristics regardless how they are rolled and haveadvantages for semiconductor applications compared to carbon nanotubes. Their properties are
dependent on diameter and wall number and thin WS2 nanotubes with small diameter and few
walls are interesting because of their band gap tunability and superior flexibility. Previously,
we have developed device applications [1,2] and sorting techniques [3] of WS2 nanotubes using
CVD-grown commercial sample. Then, for further researchs using thinner nanotubes, we havesynthesized thin WS2 nanotubes by sulfurization of solution-synthesized tundsten oxide
nanowires. However, the synthesized sample show inhomogenity of structure and more
controlled synthesis is necessary. In this study, we optimized synthesis of thin WS2 nanotubes
by controlling temperature and sulfur addition in the sulfurization process, which are known as
impotant parameters for synthesis of two-dimensional WS2 materials.
Tungsten oxide nanowire precursors weresynthesized via solvothermal reaction of WCl6 in
ethanol, carried out in a teflon-lined stainless-steel
autoclave at 180°C for 24 h. Then, the obtained
nanowires were reacted with sulfur precursor atvarious temperatures ranging from 650 to 850°C for 2
h in Ar flow to allow formation of WS2 nanotubes.
Fig. 1 shows a typical TEM image of WS2
nanotubes sulfurized at 750°C. Mean diameter of the
WS2 nanotubes is about 20 nm and smaller than that of
the sorted CVD-grown sample (32 nm) [3]. We foundFig. 1 TEM image of synthesized WS2
that 700-750°C is suitable for sulfurization. In the
nanotubes
temperature range, the oxide nanowires can beconverted to WS2 nanotubes with their structure-4
10
maintained. On the other hand, lower and higher
VG = 0.5 V
temperature leads to insufficient sulfurization and-510collapse of nanowire structure, respectively. Since
sulfurization is strongly depending on the temperature,-610homogeneous temperature distribution is important for-7
homogeneous sulfurization, which can be achieved by10
introducing sulfur precursor after temperature is-8stabilized. Moreover, we investigated their transistor
10
holeelectronperformances by ionic-liquid gating approaches (Fig.
-9
2).
10
[1] M. Sugahara et al, Appl. Phys. Express 9, 075001 (2016).
[2] H. Kawai et al, Appl. Phys. Express 10, 015001 (2017).
[3] Y. Yomogida et al, ACS Omega 3, 8932-8936 (2018).

- 156 -

-1.5 -1 -0.5 0 0.5 1 1.5
Reference voltage (V)Fig. 2 Transfer characteristics of ionicliquid gated transistors based on WS2
nanotube networks2

3P-33
Optical conductivity of the Haldane model on honeycomb lattice◦F.R. Pratama1, M. Shoufie Ukhtary1, R. Saito1
1

Department of Physics, Graduate School of Science, Tohoku University,
Sendai 980-8578, Japan

In the Haldane model on honeycomb lattice (see Fig. 1), the complex-valued hopping
parameters are introduced between second-nearest neighbor atoms in order to break the timereversal symmetry, which enables the occurrence of quantum Hall effect without the external
magnetic field [1, 2]. Recently, it is theoretically demonstrated within the dipole approximationby Ghalamkari et al. that the material with the honeycomb Haldane Hamiltonian also exhibits
an interesting phenomenon of perfect circular dichroism (PCD) in K and K’ points, where thematerial only absorbs the right- or left- hand side circularly polarized light [3]. However, they
did not calculate the absorption spectra as a function of the laser excitation energy. In this study,
we numerically calculate the transversal and longitudinal optical conductivities of thehoneycomb Haldane material with the Kubo formula, from which we can predict the opticaland plasmonic properties of the material over broad range of frequency. The result shows that
our calculations are consistent with the optical absorption with the dipole approximation, in
which PCD occurs for circularly-polarized light with energy close to the energy gap in the
Haldane energy dispersion. We also discuss the plasmon spectra as the function of Fermi energy.

Fig. 1. Haldane model on honeycomb
lattice. The hopping parameters between
first-nearest neighbor atoms tij is realvalued, whereas the complex secondnearest neighbor hopping eiΦijt’ij

carriestunable phases indicated by arrows [2].
References:[1] F.D.M. Haldane, Phys. Rev. Lett. 61, 2015 (1988).
[2] G. Jotzu et al., Nature 515, 237 (2014).
[3] K. Ghalamkari et al., J. Phys. Soc. Jpn. 87, 063708 (2018).
Corresponding author: F.R. Pratama
Email: pratama@flex.phys.tohoku.ac.jp- 157 -

3P-34
Softening effect on resonance frequency of MoS2 mechanical resonatorinduced by persistent photoconductivity○Taichi Inoue1, Takahiko Endo2, Kuniharu Takei1, Takayuki Arie1, Yasumitsu Miyata2, Seiji
Akita1
Department of Physics and Electronics, Osaka Pref. University, Sakai 599-8531, Japan2
Department of Physics, Tokyo Metropolitan University, Hachiohji 192-0397, Japan

Fig. 1 Measurement setup.
100

Laser pulse

V =3 Vgs

V =0.1 V
ds

60
40

ds

(nA)

80

I

MoS2 is expected as elements for sensor using FET ormechanical resonator (MR) [1, 2] because of its uniqueelectrical, mechanical, and optical properties. In FET,
persistent photoconductivity (PPC) [3] is often observed
and the realization of the PPC contributes to highperformance photosensor or memory. In MR, however,
the effect of the PPC is hardly revealed although it is oneof challenges toward high performance in optically tuned
nano-electro-mechanical systems. Here, we investigate
the PPC effect on MoS2 MR.
We performed resonance measurement of MoS2 MR
under the vacuum of ~ 10-3 Pa (Fig. 1). The MoS2 wassynthesized by chemical vapor deposition [4]. The
actuation was induced by applying AC drain source
voltage Vds. The vibration was detected by amplitude
modulation mixed current Imix with frequency fmod = 1
kHz. The resonance frequency can be controlled byelectrostatic force of gate voltage Vgs. The laser was
irradiated on MR through microscope. The laser
wavelength is 660 nm and the radius is ~ 11.5 m.
Firstly, we investigated PPC effect on the suspended
MoS2 FET. Fig. 2 shows temporal variation of drain
source current Ids after laser pulse with 1 W/cm2 for 10
s. The current did not return to initial state over 20 min,which indicates typical behavior of PPC [3]. The origin
of PPC in suspended MoS2 FET is most likely due totrapped photogenerated holes in defects orcontaminations of MoS2. Next, we investigated PPC
effect on MoS2 MR with the same laser conditions. Fig. 3
shows time response of resonance frequency shift of
MoS2 MR after laser pulse. The down shift was appearedby laser pulse and the shift was kept over 20 min. This
down shift is induced by not photothermal effect but
softening effect of electrostatic force by trapped holes.

20
0

-20

0

200 400 600 800 10001200

Time (s)Fig. 2 Temporal variation of drain
source current Ids after laser pulse.
0.5

Frequency shift f0(%)

1

Laser pulse

0

-0.5
-1
V =3 V

-1.5
-2

gs

V =0.2 V
ds0pp

200 400 600 800 10001200

Time (s)Fig. 3 Time response of resonancefrequency shift after laser pulse.

Acknowledgements: This work was partially supported by KAKENHI Grant Number JP15H05869, J16H00920,
16K14259, 16H06504, and 17H01040.
Reference: [1] T. Inoue et al., ACS omega, 2, 5792 (2017) [2] T. Inoue et al., 2D Materials, 5, 045022 (2018) [3]
Y. Miyamoto et al., Jpn. J. Appl. Phys., 57, 06HN01 (2018) [4] Y. Kobayashi et al., Nano Res., 8, 3261 (2015)
Corresponding Author: T. Inoue, Tel: +81-72-254- 9261, E-mail: t_inoue-4@pe.osakafu-u.ac.jp- 158 -

3P-35Layer-number dependence of NCCDW-ICCDW phase transition in TaS2
○Yasushi Ishiguro1, Naoko Kodama2, Kirill Bogdanov3, Alexander Baranov3,
Kazuyuki Takai1,2
Dept. of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan
Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
3
St. Petersburg National Research University of Information Technologies, Mechanics andOptics, Saint Petersburg 197101, Russia
1

2

The electronic properties of two dimensional (2D) nanomaterials depend on how degree they
are “two dimensional”. TaS2 is known a 2D material having charge density wave (CDW) phasetransitions, where several groups have reported the change in the conductivity between
commensurate- and nearly-commensurate- (NC) CDW phases around 150 K modulated bycontrolling dimensionality [1,2]. In our study, the change in electronic properties is investigated
for the NCCDW-incommensurate (IC) CDW phase transition around 350 K.
The TaS2 thin flakes were prepared by mechanical exfoliation of bulk crystals of TaS2 grownby the chemical transport synthesis on a SiO2 (285 nm) /Si substrate. A FET device for the
conductivity measurement were fabricated by EB-lithography process. Raman spectroscopy
was performed with an excitation wavelength of 532 nm on a temperature controllable stage.
The resistivity abruptly decreases on entering the ICCDW phase from the NCCDW phase as
shown in Fig. 1. Most notably, the transition temperature depends on the sample thickness. The
transition temperature increases as decreasing layer number of TaS2. This is explained by themetastable nature of NCCDW states, which is a short range order of CCDW state. As thedimensionality of TaS2 becomes lower with decreasing in the number of layers, the temperature
region of NCCDW states becomes wider due to more quantum fluctuation. Thus, the transition
temperature between NCCDW-ICCDW increases as the number of layers decreases. Raman
spectra are also changed in accordance with NCCDW-ICCDW phase transition as shown in Fig.
2. As increasing temperature, the peaks at 75 cm-1 broaden and the peaks at 105, 245, 307 and382 cm-1 disappear. The temperature dependence of the position and half width of the peaks
also indicate the transition temperature increases as the layer number decreases.
This project was supported by JSPS and RFBR under the Japan - Russia Research Cooperative
Program.
[1] M. Yoshida et al., Sci. Adv. 1, 9, (2015).
NC[2] M. J. Hollander et al., Nano Lett. 15, 3, (2015).

Heating

433 K

Thin
Cooling

IC
Thick

293 K

Fig. 1. Temperature dependence of resistivity
around NC-IC phase transition for TaS2 thin film(～19 layers) and thick film (～24 layers)

Fig. 2. Temperature dependence of Raman spectra
around NC-IC phase transition for TaS2 thick film

Corresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002, E-mail: takai@hosei.ac.jp- 159 -

3P-36
Does Lateral Size of MoS2 Nanosheets Influence Photoelectrochemical Performance?
Ahmad Tayyebi1, Tomokazu Umeyama2, Meysam Tayebi3, Naoki Komatsu1
1Graduate School of Human and Environmental Studies, Kyoto University, Kyoto 606-8501
2Department of Molecular Engineering, Graduate School of Engineering, Kyoto University

3Department of Civil and Environmental Engineering, University of Ulsan, Republic of Korea

Photocurrent (µA/cm2)

Photocurrent (µA.cm-2)

Designing visible-light active semiconductors for water splitting requires a suitable bandgap
and band alignment, effective charge separation, fast charge transfer, and long-term durability
in aqueous environments. Two-dimensional (2D) transition-metal dichalcogenides (TMDs)with 5 - 10% of light absorption in visible range and500
valence band maximum more positive than the (a)ZnO-MoS2 (270 nm)
400
water oxidation potential have shown a great
ZnO-MoS2 (130 nm)
300
promise for the production of H2 or further, toZnO
reduce CO2 to hydrocarbon. Combining TMD
200nanosheets having different dimensions with100
appropriate semiconductors seems an interesting0
design strategy for meeting such requirements. The
active catalytic sites located at the edge of TMDs
-0.6 -0.4 -0.2
0.0
0.2
0.4
0.6
Potential (V vs RHE)
nanosheets play a crucial role in hydrogenproduction and catalytic reactions [1]. This report
320
Zno/MoS2 (270 nm)
aims to investigate the effect of active sites of MoS2 (b) 280
Zno/MoS2 (270 nm)
onphotoelectrochemical
performance
by
ZnO
240
controlling the lateral size of MoS2 nanosheets. To
200make photoelectrodes of MoS2 with different sizes,
160
two fluorinated tin oxide (FTO) electrodes and120
FTO/SnO2 were inserted into the cuvette and a dc
80
voltage (200 V) was applied for 2 min across these40
two electrodes [2]. Furthermore, to prepare0
semiconductor/MoS2 photoelectrodes, nanosheets
0 20 40 60 80 100 120 140 160 180
with different lateral size in-situ hybridized withTime (s)zinc oxide (ZnO) and bismuth vanadate (BiVO4) as Figure 1: (a) Chopped photocurrent
wide and narrow band gap metal oxides density vs. applied potential curves. (b)semiconductors. Then, a 0.1 mg/mL ethanol Photocurrent responses under visible-light (λ >suspension of ZnO/MoS2 and BiVO4/MoS2 420 nm) illumination.
deposited on the surface of clean FTO surface bydrop-casting method. The IPCE values at 400 nm for pure MoS2 nanosheets with lateral sizeof 130 nm become 3-fold higher than that of MoS2 with size of 270 nm. The UV-vis absorption
spectra showed that the bandgap energy of ZnO nanoparticles decreased from 3.1 to 2.9 eVafter hybridization with MoS2 nanosheets. X-ray diffraction measurements indicated thatmonoclinic and Wurtzite structures were formed for BiVO4 and ZnO, respectively. The
photocurrent density-potential (J-V) and photo responses plots for bare ZnO, ZnO/MoS2(270nm) and ZnO/MoS2 (130 nm) are shown in Figure 1. Addition of MoS2 nanosheets
enhanced the photocurrent density for ZnO/MoS2 compared to bare ZnO. Furthermore,
hybridization of ZnO with smaller MoS2 nanosheets extract higher photocurrent density
probably due to the higher density of active sites at the edges of smaller nanosheets.
[1] M. Faraji et al. Energy Environ. Sci. 2019.
[2] T. Umeyama, et al. Chem. A Eur. J. 24, 1561 (2018).
Corresponding Author: A. TayyebiTel, Fax: +81-75-753-7871, E-mail: atayebi162@gmail.com- 160 -

3P-37
Enhancing the Stability of Perovskite Solar Cells via Lithium-ion Endohedral
Fullerenes on Top of Laminated Carbon Nanotube Electrodes○ Ahmed Shawky 1, Il Jeon 1, Hiroshi Ueno 2, Hiroshi Okada 1, Esko I. Kauppinen 3, Shigeo
Maruyama,1,4,* and Yutaka Matsuo1,2,*
1

Department of Mechanical Engineering, The Univ. of Tokyo, Tokyo 113-8656, Japan, 2 Schoolof Chemistry, Northeast Normal Univ., Changchun, Jilin 130024, P. R. China, 3 School of
Science, Aalto Univ. Aalto, FI-00076, Finland, 4 Energy Nano Engineering Lab., AIST, Ibaraki
305-8564, Japan
Replacing the metal electrode by carbon electrode has been reported to be one of the most effective
ways in perovskite solar cell (PSC) technology toward commercialization. This aims to enhance the device
stability of PSCs due to no ion migration and outstanding encapsulation effect. Among the carbon
electrodes, the application of freestanding carbon nanotubes (CNTs) has given the highest PCEs with theuse of 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobi-fluorene (spiro-MeOTAD) holetransporting layer (HTL). However, it is reported that the use of Spiro-MeOTAD with hygroscopic lithiumbis(trifluoromethanesulfonyl)imide (Li+TFSI−) limits the full potential of the CNT-PSCs in terms of longterm stability due to moisture-driven degradation. Recently, we reported lithium-ion-containing C60
fullerene trifluoromethanesulfonylimide salt ([Li+@C60]TFSI−) that induced an instant oxidation of spiroMeOTAD producing spiro-MeOTAD•+TFSI− and neutral [Li+@C60]•− (= Li@C60), which functioned as anantioxidant, protecting PSCs from intruding oxygen [1]. The stability of PSCs improved by 10-foldcompared with the reference devices. Thus, combining the two technologies described above can provide
a synergic and ultimate solution to the PSC stability.
Therefore, we incorporated the mixture of spiro-MeOTAD and [Li+@C60]TFSI− into the CNT top
electrode in PSCs. The HTL solution is typically drop-casted onto the CNT network in CNT-PSCs. A
saturated solution seeped through the CNT network while any undissolved [Li +@C60]TFSI− and Li@C60
suspensions stayed on the top. This led to more effective hole extraction by avoiding [Li+@C60]TFSI− inthe pathway and more effective anti-oxidation activity by placing Li@C60 next to air. Since the drop-castingon CNTs separated the dissolved species from the undissolved species, the oxidation reaction of spiroMeOTAD came to a stop. From various analyses and investigation, we found that 2 h stirring for the HTL
solution gave the highest Photoconversion efficiency (PCE) of 17% and the longest operating stability of
unencapsulated devices. The obtained PCE are close to the gold electrode-based PSCs (18.5%) while thedevice stability is approximately 100 times greater. Such excellent stability is attributed to no ion-migration
and antioxidant activity of Li@C60 that uniformly covering the CNT electrode. Not only did we demonstrate
highly stable and efficiency CNT-PSCs but also discovered a new reaction mechanism within the spiroMeOTAD and [Li+@C60]TFSI− HTL solution.
References:[1] Jeon, I. et al. Angew. Chemie Int. Ed. 57, 4607–4611 (2018).
Corresponding authors: maruyama@photon.t.u-tokyo.ac.jp, matsuo@photon.t.u-tokyo.ac.jp- 161 -

発表索引
Author Index

Author Index<A>
Achiba, Yohji

Asaka, Koji
Asaoka, Hidehito

1P-11, 2P-12, 2P-20,
3-6, 3P-11, 3P-12
1P-18
2P-32, 2P-34, 3P-28
2I-3
1P-5
2P-32
2P-11
3P-20
3P-26
3-4, 3P-26, 3P-27,
3P-34
2P-34
3P-9
3P-28
1P-30
3P-29
3P-29
1P-12
2-11
1P-22
3P-5
1P-26
3-4, 3P-26, 3P-27,
3P-34
1-1, 2-2
1P-8<B>
Bando, Yoshio
Baranov, Alexander
Bianco, Alberto
Bogdanov, Kirill
Borah, Angana

2-1
3P-35
3S-7
3P-35
1P-2

Adachi, Takumi
Ago, Hiroki
Ahmed, Saeed
Aizaki, MotokiAji, Adha Sukma
Akasaka, Takeshi
Akashi, Takaya
Akazawa, Keisuke
Akita, Seiji
Akiyama, Masato
Al-Tuairqi, Sahr
Amasaka, Yuya
Anndo, Chisato
Aoki, Kensuke
Aoki, Nobuyuki
Aoyagi, Shinobu
Aoyama, Tetsuya
Arai, Hayato
Arai, Miho
Araki, Tsutomu
Arie, Takayuki<C>
Cepek, Cinzia
Chen, GuohaiCheng, Hui-Ming
Cheng, Junfang
Chiashi, Shohei

3-1
3P-18
2-1
2-10
1-6, 1P-22, 1P-23,
2S-4, 2P-2, 2P-15,- 163 -

Chokaouychai, Sirikanya
Chu, Leiqiang
Cui, Jiaming

3P-19, 3P-21, 3P-22,
3P-24
2P-1
2P-30
2P-13

<D>
Ding, Er-Xiong

2I-3

<E>
Eda, Goki
Eda, Junko
Einarsson, Erik
Endo, Takahiko
Erata, Mayumi

2P-30
1P-17
3I-5
1P-34, 3P-31, 3P-34
2P-38

<F>
Fajardo, Mario E.
Fujigaya, Tsuyohiko
Fujii, Yasumaru
Fujimoto, Yoshitaka
Fujisaki, Kotaro
Fukatsu, Kimiyoshi
Fukazawa, Shinpei
Fukazawa, Yusuke
Fukuhara, Kengo
Fukui, Hiroji
Fukuyama, Hidetoshi
Furiya, Yusuke
Furukawa, Makoto
Futaba, Don
Futalan, Wilbert James

3-9
1P-2, 2P-9, 3P-3
1-10
1-4
2P-3
2P-24
2P-11
3P-28
1P-17
3P-10
3P-6
3P-12
2P-11
2P-22, 3P-18
3-10

<G>
Gao, Weilu
Gao, Yanlin
Golberg, Dmitri

1I-2
1-9
2-1

<H>
Haga, Taishi
Hamano, TsuyoshiHara, Masanori
Harigai, Toru

1-4
3P-17
1-8
2P-4

Haruta, Naoki
Hashimoto, Kakeru
Hashimoto, Takeshi
Hashizume, Daisuke
Hata, Kenji
Hatanaka, Miho
Hayashi, Hironobu
Hayashi, Naoki
Hayashi, Takuya
He, Jinping
He, Xing
Higashiyama, Tsukumi
Higuchi, Syohei
Hikage, Yurina
Hirano, Atsushi
Hirao, Toshio
Hiraoka, Shota
Hirayama, Takaaki
Hirotani, Jun
Hisama, Kaoru
Homma, Yoshikazu
Honda, Shiho
Hong, Jinhua
Hori, Masashi
Horii, Hikaru
Hoshino, Yudai
Hotta, Takato
Huang, Hsin-Hui
Hung, Nguyen T.
Hussain, Aqeel<I>
Ichinose, Yota
Ideue, Toshiya
Iida, Satoshi
Inaba, Takumi
Inoue, Daishi
Inoue, Taichi
Inoue, Taiki
Inoue, Tomoyasu
Irisawa, Toshifumi
Iseki, Takayuki
Ishiguro, Yasushi

2P-20
3P-19
2P-4
1-7
1-5, 2P-22, 3P-18
1P-35, 1P-36
2P-27
1P-8
2-12
2P-22
1P-9
2P-36
1P-32
1P-25
1P-6
3P-17
3P-21
2P-12
2P-17, 3-5, 3P-4,
3P-17
2P-2, 3P-19, 3P-21
2S-4, 2P-16
3P-16
1P-5
3P-27
3P-6
3P-8
1P-32, 1P-33, 2P-31
1-8, 3P-16
1P-37, 1P-38, 2P-26
2I-3

1P-17
1-7
1P-33
2P-16
1-7
3P-26, 3P-34
1-6, 1P-22, 2P-15,
3P-21, 3P-22, 3P-24
1P-23
2P-35, 3P-31
2I-4
2P-29, 3P-35- 164 -

Ishihara, Hiroki
Ishii, Akihiro
Ishii, Satoshi
Ishikawa, Takahiro
Ishizeki, Keisuke
Islam, Md Shafiqul
Ito, Takahiro
Iwabuchi, Yoshiharu
Iwasa, Yoshihiro<J>
Jeon, IL
Jiang, Hua
Jippo, Hideyuki
Jornet, Josep M.
Joshi, Prerna<K>
Kako, Masahiro
Kameda, Tomoaki
Kanai, Yasuyuki
Kaneko, Toshiro
Kanzawa, Shinji
Karmakar, Arka
Kashima, Taiga
Kashiwaya, Satoshi
Kataoka, Yosuke
Kataura, Hiromichi
Kato, Akihiro
Kato, Toshiaki
Kato, Yuichi
Kato, Yuichiro
Katsutani, Fumiya
Kauppinen, Esko I.
Kawaguchi, Minoru
Kawahara, Kenji
Kawai, Tsuyoshi
Kawakami, Satoru
Khaniya, Sharma Aliza
Kikitsu, Tomoka
Kikuchi, Koichi

1P-7
2-8, 2P-14
3P-17
3P-17
3P-15
2P-26
1P-8
1P-10
1-7

2-3, 2P-18, 3-7,
3P-37
2I-3
2P-27
3I-5
1-8

2P-11
3P-7
1P-13
1P-9, 3-11
2P-11
3I-5
3P-4
1-1, 2-2
3P-23
1P-6, 2-3, 2P-13,
2P-38
2P-37
1P-9, 3-11
1-5
2-8, 2P-14
1I-2
2I-3, 2P-18, 3P-22,
3P-37
2P-9
2P-34, 3P-28
1P-15
1P-3
3-2
1-7
1P-11, 2P-12, 3-6,
3P-11, 3P-12

Kinoshita, Kei
Kinumoto, Taro
Kioka, Yusei
Kishida, Hideo
Kishida, Kazuki
Kishimoto, Shigeru
Kitagawa, Sae
Kitamura, Nozomu
Kitano, Sho
Kitaura, Ryo
Ko, Jeong Won
Ko, Weon Bae
Kobashi, Kazufumi
Kobayashi, Kazuhiro
Kobayashi, Keita
Kobayashi, Yu
Kodama, Naoko
Kodama, Takeshi
Koh, Shinji
Kojima, Kana
Kokubo, Ken
Komatsu, Naoki
Komatsu, Natsumi
Konishi, Teruaki
Kono, Junichiro
Koyama, Takeshi
Koyano, Bunsho
Kozaki, Shu
Kumar, GogoiPranjal
Kusakabe, Koichi
Kuwahara, Shota
Kuwahara, Yuki
Kwon, Eunsang
Kyotani, Takashi<L>Li, Henan
Li, Ruoming
Li, Sheng
Li, Shilong
Li, YanLiao, Yongping

3P-5
3P-10
2P-5
1-2
2P-4
2P-17, 3-5, 3P-4
1P-19
1P-36
2-10
1S-1, 1P-32, 1P-33,
2P-31
2P-10
2P-10
1-5
3-6, 3P-11
2-5
2P-7, 2P-30, 2P-35
2P-29, 3P-35
1P-11, 2P-12, 2P-20,
3-6, 3P-11, 3P-12
2P-37
1P-34

1P-30, 1P-34, 3P-31
3-7
1-2
2-1
2P-8, 3P-7
2-9, 3P-2
2P-13
3P-22
1-2, 1P-5, 1P-34,
2P-35
López-Moreno, Alejandro 3P-25

Lim, Hong En
Lin, Hao-Sheng
Lin, Yung-Chang
Liu, Chang
Liu, Feng
Liu, Haoming
Liu, Huaping
Liu, Ming
Liu, Zheng<M>
Ma, Yue
Machida, Shinichi
Machida, Tomoki
Machiya, Hidenori
Maeda, Taisei
Maeda, Yutaka
Maekawa, Yuki
Maki, Hideyuki
Maniwa, Yutaka

Tutorial

2-12, 3P-25, 3P-36
1I-2
3P-17
1I-2, 1P-17
1-2
3P-21
2P-19
1P-5
1P-7, 3-10
3P-8
3S-6
1P-10
1P-7

2-9, 3P-2
2-9, 3P-2
2-9, 3P-2
2P-13
1I-1, 1P-20, 2-9,
3P-2
2I-3

Maruoka, Masato
Maruyama, Mina
Maruyama, Shigeo

Maruyama, Takahiro
Masubuchi, Satoru
Matsuda, Kazunari
Matsuki, Keichiro
Matsumoto, Keiichiro
Matsunaga, Masahiro
Matsuo, Hiroyuki
Matsuo, Yutaka
Matsuoka, Hirofumi
Matsuoka, Tokinaru
Miki, Keishu
Mitsuhara, Masatoshi
Miura, Yasuhiro F.
Miyamoto, Kazunori- 165 -

3-8
1P-8
3P-5
2-8
1P-31
1P-1, 2P-11, 3P-1
2P-5
3P-28
1P-30, 1P-34, 2P-7,
2P-35, 3P-31
1P-31
1-10, 2-4, 2-6
1-6, 1P-22, 1P-23,
2-3, 2P-2, 2P-15,
2P-18, 3-7, 3P-19,
3P-21, 3P-22, 3P-24,
3P-37
2P-21, 3-2
3P-5
1-3, 2P-6
2P-30
3P-14
2P-17
3P-13
1P-10, 2-3, 2P-18,
3-7, 3-8, 3P-37
2P-7
1P-4
2P-37
2P-34
2-11
2-11

Miyata, Yasumitsu

Miyauchi, Yuhei
Miyazaki, Takashi
Miyoshi, Yusuke
Mochizuki, Yuta
Momose, Takamasa
Mori, Manami
Morimoto, Takahiro
Morisawa, Yusuke
Moriya, Rai
Motiduki, Yuta
Mouri, Shinichiro
Mukai, Kanau
Murai, Yuya
<N>
Nagai, Kohei
Nagai, Ryo
Nagai, Yukiko
Nagasawa, Hiroshi
Nagasawa, Shota
Nagata, Masataka
Nakagawa, Ayano
Nakagawa, Kenta
Nakagawa, Rei
Nakahara, Hitoshi
Nakamura, Kosuke
Nakamura, Yuto
Nakanishi, Yusuke
Nakano, Akio
Nakashima, Naotoshi
Nakasuga, Akira
Namiki, Katsuya
Nanishi, Yasushi
Nanri, Yoshihisa
Narirsuka, Shigeya
Narita, Haruna
Niidome, Yoshiaki
Nishi, Ryohei
Nishidome, Hiroyuki
Nishijima, Satomi
Nishikawa, Tomohiro

1P-30, 1P-34, 2P-7,
2P-12, 2P-30, 2P-35,
3P-31, 3P-34
1-3, 2P-6
2P-24
3P-28
3P-27
3-9
2P-19
1-5
1P-35, 1P-36, 2P-36
3P-5
3P-26
1P-26
3P-19
2P-31

1P-17
3P-23
2P-9
1P-4
1P-10
1-2
1P-12
3P-28
3-1
2-2
1P-27
1-2
1-2, 1P-5, 1P-30,
1P-34
2P-23
2-10
3P-10
3-3
1P-26
3P-10
2P-21
1P-1
3P-3
2P-32
1P-17, 2P-12
1P-25
2P-20

- 166 -

Nishimoto, Shinya
Nishimura, Tomoaki
Nishio, Yuya
Noda, Suguru
Noda, Yukie
Nonoguchi, Yoshiyuki
Norimatsu, Wataru
Nozaki, Junji
Nugraha, Ahmad R. T.
Nukatani, Yoko
<O>
Obana, Daichi
Obata, Yoshinori
Ochi, Hayato
Ocon, Joey
Ogamoto, Tatsurou
Ogata, Hironori
Ohfuchi, MariOhno, JunOhno, Yutaka
Ohtomo, Manabu
Oi, Kanae
Okada, Hiroshi
Okada, Naoya
Okada, Susumu

Okada, Takuya
Okamatsu-Ogura, Yuko
Okawa, Shuhei
Okazaki, Toshiya
Okita, Wakana
Omachi, Haruka
Omata, Yoshimasa
Ooe, Ukyo
Osawa, Ayato
Osawa, Eiji
Osawa, Toshio
Ota, Riku
Otsuka, Keigo
Otsuki, Nao

2P-12
1P-7, 1P-27
3P-4
1P-3, 1P-19, 3-1,
3-3
1P-28
1P-15
1P-8
1P-17
1P-37, 1P-38, 2-7,
2P-26
3P-1

2P-8
1P-7
1P-19
3-10
3P-24
3P-23
2P-27
2P-9
2P-17, 2P-32, 3-5,
3P-4, 3P-17
2P-27
1P-15
1P-10, 3-8, 3P-37
3P-31
1-9, 1-10, 1P-16,
1P-29, 2-4, 2-6,
2P-2, 2P-28
2P-21, 3-2
2P-38
2P-18
1-5, 1P-14
3-11
1P-12
2P-28
1P-26
1P-36
2-11
3-3
2P-19
2P-14, 3P-21
1P-18

Ozeki, Fumiaki

2P-11

<P>
Padama, Allan Abraham
Pang, Xiaoqi
Park, Jeong Hoon
Pratama, Fenda Rizky
Pu, Jiang

Shiga, Takuma
Shinohara, Hisanori

3-10
1P-37
2P-10
1P-24, 3P-33
2P-7, 2P-30<Q>
Qian, Yang
Qin, Feng

3P-22
1-7

<R>
Reckmann, Robin

3P-28

Shinokita, Keisuke
Shiogai, Tsubasa
Shiomi, Junichiro
Shiomi, Mao
Shiraki, Tomohiro
Shiromaru, Haruo
Shukla, Shivani
Singh, Arjun
Sonoda, Toshiki
Suda, Yoshiyuki
Suenaga, Kazu
Sugai, Toshiki
Sugime, Hisashi<S>
Sacco, Daria
Saida, Takahiro
Saiki, Koichiro
Saito, Riichiro

Saito, Susumu
Saito, Takeshi
Saito, Yahachi
Saito, Yutaro
Sakurai, Shunsuke
Sanderson, Joseph
Sasaki, Shogo
Sasano, Yusuke
Sasao, Noboru
Sasaoka, KenjiSata, Ryoske
Sato, KumikoSato, Shintaro
Sato, Tohru
Sato, Toshihiro
Sawahata, Hisaki
Sekido, Masaru
Senga, Ryousuke
Seo, Seungju
Sharma, Kamal P
Shawky, Ahmed
Shi, Wu

2-7
2P-21
1P-8
1P-24, 1P-31, 1P-37,
1P-38, 2-7, 2P-26,
2P-33, 3P-33
1-4, 1P-13
3S-6
1-1, 2-2
1P-18
2P-22, 3P-18
3P-9
2P-30
1P-10
1P-13
2P-5, 3P-6, 3P-15
1P-35, 1P-36, 2P-36
2P-11
2P-27
2P-20
3-1
2-6
1P-18, 2P-19
1P-5
2-3
3-2, 2P-21
3P-37
1-7

- 167 -

Sunnarionto, Gagus
Suzuki, Hal
Suzuki, Hiroo
Suzuki, Mitsuaki
Suzuki, Satoru
Suzuki, Shinzo
Suzuki, Tomoko
Szczepaniak, Urszula<T>
Tachi, Suzuka
Takada, Takumi
Takaguchi, Yuhei
Takahashi, Daizo
Takai, Kazuyuki
Takashima, Kengo
Takeda, Mitsuhiro
Takei, Kuniharu
Takenobu, Taishi
Takikawa, Hirofumi
Takizawa, Mayu
Takizawa, Nobuyuki
Tan, Fu-Wen
Tanaka, Koichiro
Tanaka, Takeshi
Tanaka, Toshihiko

1-2
1-2, 1P-5, 1P-12,
1P-32, 1P-33, 2P-31
1-3, 2P-6
1P-21
1P-3
3-4
3P-3
3P-9
1-2
3I-5
2P-25
2P-4
1-2, 1P-5
3P-8
1P-3, 1P-19, 3-1,
3-3
1P-7
1P-35, 1P-36, 2P-36
3-11
3P-1
3P-17
1P-4, 1P-21
2P-21
2P-36

3P-8
1P-10
2P-7
1P-19
1P-7, 1P-25, 1P-27,
2P-29, 3P-35
3P-15
2P-19
3-4, 3P-26, 3P-27,
3P-34
2S-3, 2P-7, 2P-30
2P-4
3P-1
3P-9
3-5
1P-17
1P-6, 2P-13, 2P-38
2-11

Tang, Dai-Ming
Taniguchi, Takashi
Tanimoto, Tsuyoshi
Tayebi, Meysam
Tayyebi, Ahmad
Tenne, Reshef
Terasawa, Tomo-oTerashima, Koki
Tian, Yuan
Toma, Satoshi
Torii, Haruki
Toyoda, Masahiro
Toyoda, Masayuki
Tsuji, Takashi
Tsukuda, Masaaki
Tsumura, Tomoki<U>
Uchida, Yuki
Uchiyama, Masanobu
Uchiyama, Yosuke
Ueno, Hiroshi
Ueno, Keiji
Ukhtary, M. Shoufie

2-1
1-3, 1P-32, 2P-31,
3P-5
2P-4
3P-36
2-12, 3P-36
1-7
1P-8
2P-31
1P-24
1-1
1P-13
3P-10
1P-13
3P-18
2P-3
3P-10

Umeyama, Tomokazu
Utsugi, Koichi

2P-34
2-11
1P-32
3-8, 3P-37
1P-32
1P-24, 2-7, 2P-33,
3P-33
3P-36
2P-19

<V>
Vandrevala, Farah

3I-5

<W>
Wakabayashi, Katsunori
Wakabayashi, Tomonari

Wang, Guowei
Wang, Pengyingkai
Wang, Qi
Wang, Tong
Wang, Xiaofan
Watanabe, Hiromichi
Watanabe, Kenji

1S-2, 2P-8, 3P-7
1-1, 1P-13, 1P-35,
1P-36, 2P-36, 3-9,
3P-9
1P-6
2P-15
3P-9
1P-38
1-3, 2P-6
3P-20
1-3, 1P-32, 2P-31,
3P-5- 168 -

Watanabe, Makoto
Watanabe, Takeshi
Wei, Fei
Wei, Xiaojun<X>
Xia, Chenmaya
Xiang, Rong

Xie, Sishen
Xu, Ying<Y>Yagi, Takashi
Yamada, Hinano
Yamada, Hiroko
Yamada, Michio
Yamada, Ryohei
Yamada, Ryota
Yamada, Takeo
Yamaguchi, Yoshiki
Yamamoto, Daisuke
Yamamoto, ShunYamamoto, Takahiro
Yamasaki, Shigeto
Yamashita, Taishi
Yamashita, Yusuke
Yamauchi, Kentaro
Yamauchi, Miho
Yana, Takumi
Yanagi, Kazuhiro
Yang, Dehua
Yang, FengYang, Juan
Yang, Jun
Yang, Mei
Yang, Yang
Yano, Masahiro
Yasuda, Hidehiro
Yasuda, Satoshi
Yokoi, Hiroyuki
Yokoi, Tomoya

2P-15
2P-37
3S-5
2P-13

2-9, 3P-2
1-6, 1P-22, 2-3,
2P-15, 3P-21, 3P-22,
3P-24
2P-13
1P-14

3P-13
1P-21
2P-27
1P-1, 2P-11, 3P-1
1P-23
1P-18
1-5
1P-9
3-4
3P-21
2P-3, 2P-5, 2P-25,
3P-6, 3P-14, 3P-15
2P-34
3P-20
3P-11
2-2
2-10
2P-4
1I-2, 1P-17, 2P-12,
3P-13, 3P-32
2P-13
1I-1, 1P-20
2-9, 3P-2
2-10
1P-14
2-3
1P-8
2-5
1P-8
3P-30
3P-28

Yomogida, Yohei
Yoneyama, Kazufumi
Yoshida, Masaro
Yoshida, ShunYoshikawa, Daiki
Yoshikawa, Ryo
Yoshimoto, Hiroki
Yoshimura, Masamichi
Yoshimura, Motohiko
Yoshino, Fumi
Yoshitani, Hiroshi
Yostumoto, Satoshi
Yudasaka, Masako
Yuge, Ryota<Z>
Zak, Alla
Zhang, Daqi
Zhang, Minfang
Zhang, Qi
Zhang, Qiang
Zhang, Xiao-xiao
Zheng, Yongjia
Zhou, Weiya
Zolotoukhina, Tatiana

1P-17, 3P-13, 3P-32
1P-16
1-7
1P-11
3P-26
3P-19
1P-27
1-8, 3P-16
1P-13
2-12
3P-10
1P-22, 3P-24
1P-14, 2P-38
2P-24

1-7
2-9, 3P-2
1P-14
2P-1
2I-3
1-7
1-6, 1P-22, 2P-15,
3P-22
2P-13
1P-28

- 169 -

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NIRvana :640
TM

低暗電流ノイズ（電子冷却：-80℃、液体窒素：-190℃）
110fps（ビデオレート以上）
標準GigEインターフェースで50ｍまで延長可
空冷ファンと水冷を切替可能
アプリケーション例
・フォトニック結晶PLイメージング及びスペクトル・一重項酸素イメージング及びスペクトル・太陽電池PLイメージング及びスペクトル・天体観測微弱光イメージング
・食品断面イメージング
・In-Vivoイメージング など

仕様
モデル

センサー

NIRvana:640ST

冷却温度

ダークチャージ

読み出しノイズダイナミックレンジ
フレームレート

インターフェース
ソフトウェアNIRvana:640LN

20μm x 20μm

素子サイズ
波長範囲

NIRvana:640
640 x 512 x InGaAs
0.9 ～ 1.7 μm
-80℃

-60℃

1500 e-/p/sec<120 e-rms

300 e-/p/sec

16 Bit (>15Bit@1 素子 )110 fps@10MHz

Gig E

-190℃

<8 e-/p/sec
15 e-rms

2.77 fps@250KHz

LightField, SITK-LabVIEW, WinX32

www.pi-j.jp