Mar. 2015 / Vol. 149

Mitsubishi Electric
Recent Development Results of Power Device• Editorial-Chief
Kiyoshi Sakai

CONTENTS• Editorial Advisors
Toshio Masujima
Mitsutaka Matsukura
Makoto Egashira
Koji Miyahara
Chikao Nishida
Masami Fujii
Yoshiki Hama
Tetsuyuki Yanase
Yutaka Kobayashi
Tatsuya Ichihashi
Shinji Yamana
Takafumi Kawai
Masato Oshita
Toshihiro Kurita

Technical Reports• Vol. 149 Feature Articles Editor
Harufusa Kondo• Editorial Inquiries
Kiyoshi Sakai
Corporate Total Productivity Management& Environmental Programs
Fax: +81-3-3218-2465• Product Inquiries
America
Tony Sibik
Powerex, Inc.
173 Pavilion Lane
Youngwood, PA 15697-1800, USA
MarketingFax: +1-724-925-4393
Web: www.pwrx.com

Overview ..........................................................................................1
by Gourab Majumdar
Super Mini DIPIPM “Ver.6 Series” .................................................2
by Shogo Shibata and Masahiro Kato
Hybrid SiC Modules for High-Frequency Applications ...............5
by Yuji Miyazaki
Next-Generation Power Module for Automotive Applications –J1-Series ..........................................................................................7
by Mikio Ishihara and Kazuaki Hiyama
Technologies for Seventh Generation High Performance, High
Ruggedness Power Chips ...........................................................10by Kenji Suzuki and Fumihito Masuoka
Low On-Resistance SiC-MOSFET with a 3.3-kV Blocking Voltage..........................................................................................................14
by Kenji Hamada, Shiro Hino and Takeshi Kitani
Packaging Technologies for High-Temperature Power
Semiconductor Modules ..............................................................18
by Yasunari Hino, Nobuo Yokomura and Hiroaki Tatsumi

EuropeRobert Wiatr
Mitsubishi Electric Europe,B.V.
German Branch
Gothaer Strasse 8, 40880 Ratingen,Germany
Power device marketing
Fax: +49-2102-486-3670
China
Qian Yu Feng
Mitsubishi Electric & Electronics (Shanghai)
Co.,Ltd.
29F, Shanghai Maxdo Centre
No.8, XingYi Road, ChangNing, Shanghai,
P.R.C.
MarketingFax: +86-21-5208-1502
Mitsubishi Electric Advance is published on line
quarterly (in March, June, September, andDecember) by Mitsubishi Electric Corporation.
Copyright © 2015 by Mitsubishi Electric
Corporation; all rights reserved.
Printed in Japan.
The company names and product names described herein are thetrademarks or registered trademarks of the respective companies.

PrecisMitsubishi Electric offers a wide variety of power electronics
products to satisfy various customer needs, ranging from home
appliances to industrial, automotive and railway application
products.
In addition, developments of new SiC devices together with new
packaging technology are now intensively underway.

TECHNICAL REPORTS

Overview

Author: Gourab Majumdar*

Status Quo and Prospects of Power Semiconductor Technologies
With the increasing global population as well as economic development in emerging countries, the demand forenergy continues to grow. The shale gas revolution in the United States may substantially help solve energy issues,
but not global warming. Renewable energies such as wind and solar power are attracting attention, and the efficientuse of energy is becoming ever-more important. Over 40% of secondary energy is widely used as electric power.
Therefore, the development of power electronics (PE) technologies for converting power has become essential for
effectively using electricity.
By supplying not only various PE devices and machinery which help save energy but also power
semiconductors as the core of such PE devices and machinery, Mitsubishi Electric is promoting research anddevelopment with a view to the sustainable development of such devices and machinery. In particular, we are
improving the performance and functions of insulated gate bipolar transistor (IGBT) modules and intelligent power
modules (IPMs) that incorporate peripheral circuits having optimal protection and driving functions.
These power modules combine technological elements of not only the semiconductor chip structure andprocess design but also package technology to ensure high-temperature and high-reliability performance. Startingfrom a planar gate cell structure through a trench cell structure and CSTBTs (IGBTs forming carrier accumulation
layers), Si-IGBT chip technology has now reached the seventh-generation CSTBTs in which high performance isachieved by using ultra-thin wafer technology.
In recent years, to create high-temperature, high-withstand voltage semiconductors having high-speed
switching performance by replacing Si wafers with SiC (Silicon Carbide) wafers for semiconductor materials,
Mitsubishi Electric has developed and commercialized power metal-oxide semiconductor field-effect transistors(MOSFETs), power modules and IPMs using power Schottky barrier diode (SBD) chips.
These new semiconductors have enabled dramatic reductions in power conversion losses as well as the size
and weight of power modules and their application systems, leading to the further evolution of power electronics
equipment.
This issue looks at our power semiconductors, and development examples of our IGBT modules, IPMs, SiC
and device technologies in the fields of consumer applications, industry, automobiles and electric railways.

*Fellow, Semiconductor & Device Group

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Super Mini DIPIPM “Ver.6 Series”
Authors: Shogo Shibata* and Masahiro Kato*This paper introduces the new Super Mini
DIPIPM™ Ver.6 Series for air conditioners and otherwhite goods applications.
The Ver.6 Series employs the seventh generation
insulated-gate bipolar transistor (IGBT) configured in
the carrier-stored trench-gate bipolar transistor(CSTBT) architecture to reduce the power consumption
and cost of inverter systems. It also enables improved
system design by offering an enhanced product lineupand expanded overload operating range.

a high-voltage integrated circuit (HVIC), a low-voltage
IC (LVIC) and bootstrap diodes (BSDs).
Control integrated circuit

Power inverter circuit

VP1

P
IGBT1

VUFB
U

UP

IGBT2

HVIC

1. Introduction
Mitsubishi Electric’s Dual Inline Package Intelligent
Power Modules, the DIPIPM series, are transfer-molded
IPMs with integrated power chips and control IC chips
containing drivers and protection circuitry. In 2004,
Mitsubishi Electric commercialized the Super Mini
DIPIPM Ver.4 Series configured with the fifth generation
IGBT, and in 2011, the Super Mini DIPIPM Ver.5 Series
with the sixth generation IGBT. These series havehelped reduce the size and energy consumption of
inverter units for air conditioners, washing machines,
refrigerators and other white goods. This time, the“Super Mini DIPIPM Ver.6 Series” has been developed
by incorporating Mitsubishi Electric’s proprietary seventh
generation IGBT. In 2013, this series was put into mass
production and has contributed to the low power
consumption of white goods. This paper describes theoutline, features and key technologies of the Super Mini
DIPIPM Ver.6 Series.

Di1

Di2

VVFB
V

VP

VWFB

IGBT3

Di3

IGBT4

Di4

IGBT5

Di5

IGBT6

Di6

WP
VNC

W

NU

VN1

UN

NV

LVIC

VN
WN
Fo

NW

VOT
VNC

CIN

Fig. 2 Internal circuit diagram

2.1 Power inverter circuit
The three-phase AC output power inverter isconfigured with six IGBTs and six free-wheeling diodes(FWDs).

Fig. 1 External view of the Super Mini DIPIPM Ver.6
Series

2. Outline of the Super Mini DIPIPM Ver.6
SeriesAs shown in Fig. 2, the internal circuit of the Ver.6
Series is configured in the conventional manner,integrating a three-phase AC output power inverter andcontrol circuit. The control integrated circuit consists of*Power Device Works

2.2 Control ICs
HVIC (one unit): The HVIC integrates the drive
circuits for the P-side IGBTs, the high-voltage level
shifter, and the undervoltage protection circuit for thefloating power supply (UV, without Fo (full output)). A
bootstrap circuit system is employed to enable drivingwith a single 15-V power supply.
LVIC (one unit): The LVIC integrates the drive
circuits for the N-side IGBTs, the undervoltage
protection circuit for the control power supply (UV), theshort-circuit protection circuit (SC), and the2

TECHNICAL REPORTS

overtemperature protection (OT) or analog temperature
output (VOT) circuit. The short-circuit protection circuit
detects an overcurrent using an external shunt resistor,
feeds it back to the LVIC to shut off the IGBTs, andoutputs an error signal if the undervoltage protection
circuit for the control power supply or the short-circuit
protection circuit is active.
BSD (three units): Diodes for the bootstrap circuit(BSDs) are integrated with the current limiting resistors.
They eliminate the need for external components andthus help reduce the board size. They also enable
driving with a single 15-V power supply.
2.3 Internal structure
Figure 3 shows a cross-sectional diagram of theSuper Mini DIPIPM Ver.6. The package size andterminal arrangement and layout remain the same asthat of the previous Super Mini DIPIPM Ver.5. This
minimizes the design and evaluation time for upgrading
to the Ver.6 Series.
Cu frame
AI wireMold resin

FWD

Insulated heatdissipation sheet

Fig. 4 CSTBT structure

circuit is integrated in the 5 to 15-A models that have ahigh market demand. By employing the seventh
generation IGBT, the Ver.6 Series has achieved agreater current carrying capacity per unit area. This
makes it possible to add a new model with a rated
current of 35 A to the lineup and the BSDs are now
integrated in six models ranging from 5 to 35 A.

IC

IGBT

Au wireBSD

Fig. 3 Internal structural diagram

3. Features of the Super Mini DIPIPM Ver.6
Series
3.1 Seventh generation IGBTThe Super Mini DIPIPM Ver.6 Series adopts theseventh generation IGBT, which has improved the IGBT
performance from the level of the Ver.5 Series. While
the IGBTs of previous generations already employed
Mitsubishi Electric’s proprietary transistor structure,
namely CSTBT, to achieve high energy saving
performance, the seventh generation focuses on savingenergy under low-load operating conditions. To this end,in the CSTBT structure as shown in Fig. 4, the seventh
generation IGBT has drastically reduced the thicknessof the p+ layer as well as optimizing the device
structure.
In addition, it has also minimized the turn-off tailcurrent and reduced the switching power loss. These
improvements significantly reduce the power loss of air
conditioners during rated operation.
3.2 Enhanced lineup
The previous Super Mini DIPIPM Series lineup has
a maximum rated current of up to 30 A; and the BSD

3.3 Expanded overload operating range
The Ver.6 Series employs a trimming circuit tocompensate the characteristics of the short-circuit
protection function embedded in the LVIC. As a result,the variance in the detected voltage for short-circuit
protection has been reduced from the conventional±10% to ±5%. This improved accuracy allows 10%
expansion of the inverter overload operating range, andincreases the current carrying capacity for driving thesystem’s motors.
3.4 Overtemperature protection/temperaturedetection function
Just like the previous Ver.5 series, the new Super
Mini DIPIPM Series is available with overtemperature
protection (OT) or analog temperature output thatexternally reports the module temperature as an analog
voltage signal (VOT). Either model can be chosen
according to the system requirements.
4. Performance/Characteristics of Super
Mini DIPIPM Ver.6 Series
For the representative model of the Super Mini
DIPIPM Ver.6 Series, PSS15S92E6-AG (15 A/ 600 V),
Table 1 shows the electrical characteristics, and Fig. 5
shows the dependence of the temperature rise, ΔT(j−c),on the allowable effective current. When operated witha carrier frequency of 5 kHz at an effective current of
7.5 Arms, the rise in junction temperature remains
below 25°C.

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Table 1 Electrical characteristics of PSS15S92E6-AG
Item
Collector-emittersaturation voltage
Forward voltage drop

Switching time

SymbolVCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)Conditions
VD=VDB=15V
IC=15A, VIN=5V-IC=15A, VIN=0V
VCC=300V, VD=VDB=15V
IC=15A, Tj=125°C
VIN=0⇔5V
Inductive load

Min.
Tj=25°C
Tj=125°C

Min.
–
–
–
0.65
–
–
–
–

Typ.
1.70
1.90
2.50
1.05
0.30
0.40
1.15
0.15

Max.
2.05
2.25
3.00
1.45
–
0.65
1.60
0.30

Unit
V
V
μs

Fig. 5 Temperature rise – Allowable effective current
characteristics of 15-A model of Super Mini
DIPIPM Ver.6 Series (Conditions: Tj = 125°C, Vcc =300 V, P.F. = 0.8, three-phase sinusoidal output)

5. Conclusion
This paper presented the functions and features of
the newly developed/commercialized Super Mini
DIPIPM Ver.6 Series. We will continue to use the key
technologies of the Ver.6 Series to develop productsthat meet market needs, thus expanding the use of
inverters in home appliances and industrial equipment
and hence saving energy.
Reference(1) Masataka Shiramizu, et al.: “Super Mini DIPIPM‘Ver.4 New Series’ Development, Mitsubishi Denki
Giho, 84, No. 4 (2010) (in Japanese).

4TECHNICAL REPORTS
E

Hyb
brid S
SiC ModuleM
es forr
H
High-FFrequuencyy Appllicatioons
Autthor: Yuji Miy
iyazaki*

1. Intro
oduction
A hhigh-frequencyy hybrid SiC power m
modulereduces losses durinng operation in high-freqquency
regions. It increases the switchingg frequency oof theequipmennt and thus ennables the sizze, weight, annd costof the equuipment to be reduced.
ease in Swiitching Fre
equency
2. Incre
Poweer supply sysstems often employeAC reeactors
and/or filtter circuits for suppressingg harmonics, output
transform
mers for powerr conversion, anda DC reactoors forvoltage bboosting circuuits. These reeactor compoonents
are geneerally bulky and thus occcupy consid erable
space, paarticularly in a large-capacitty system, maaking it
difficult too reduce the size, weight and cost of powerelectroniccs devices andd peripheral syystems.
Fromm the designerr’s standpoint, it is advantaageous
to increasse the switchinng frequency of the power ddevice,because higher frequeency allows the use of ssmallert size and ccost ofreactor coomponents, thhus reducing theequipmennt as well as potentially creatingc
new added
value succh as the inteegration of exxternal reactorrs andimproved filter performance. Sincee 2004, Mitssubishi
Electric hhas provided the fifth generation insulatedd-gate
bipolar trransistor (IGB
BT) optimized for high-freqquency
switching, namely the carrier-stored trench-gate bbipolartransistorr (CSTBT). Thhese have beeen commerc ialized
as the “NFH Series” high-frequenncy IGBT moodules,
which aree widely usedd for uninterruptible power ssupply(UPS), poower conditioners for solarr power gene ration,
medical ppower units annd other equippment that runns at ahigh switcching frequenccy.
elopment ofo Hybrid SiC Module
3. Deve
3.1 Featuures
As thhe successor of the “NFH Series”, our newly
developed high-frequeency hybrid SiC module em
mploysa silicon carbide Schoottky barrier dioded(SiC-SBBD) tomeet the requirementss for increasingg the power ssystemfrequencyy. The SiC-SB
BD is expected to exhibit muchhigher pperformance thant
the silicon diode ((Si-Di).
Figure 1 ccompares the turn-on current waveformss of the
Si-Di andd SiC-SBD. Inside the Si-Di, which is a bbipolar
device wiith a PN juncttion, minority carriers (holees) are
accumulaated during thee conduction period,pand theen are*Power Devvice Worksdischarged by the electric field appliedd during theewitching periood. Consequeently, a spike--like transienttsw
cuurrent (recovery current) apppears and accts as a factorr
too increase thee switching poower loss. In contrast, thee
SiiC-SBD operates as a uunipolar device and thussgeenerates no recoveryrcurreent. There is only a smalllchharge current due to the pparasitic capaccitance of thee
deevice, resultingg in an extrem
mely small swittching loss.

Fig. 1 ComparisonC
off turn-on waveforms

In contrastt, it is less meeaningful for the transistorr
sw
witch to employ a SiC – m
metal oxide semiconductorsrfieeld effect trannsistor (MOSFFET) to reducce conductionn
loss, because the conducttion loss acccounts for areelatively small percentage oof the appliedd equipment’ss
tootal loss. Coonsidering coost effectiveness too, wee
GBT device for the NFH
addopted a well-proven Si-IG
H
Seeries. In respponse to the market demaand, we havee
deeveloped a product lineup with a ratedd voltage andd
cuurrent of 1,2000 V and 1000 to 600 A (T
Table 1). Theepaackages are fully compaatible with those of theecoonventional NFH Series annd so the exiisting devicess
caan be easily replaced. In addition, sinnce the IGBTT
Table 1 Prodduct lineup
Type name
CMH100DY-24N
C
NFH
CMH150DY-24N
C
NFH
CMH200DU-24N
C
NFH
CMH300DU-24N
C
NFH
CMH400DU-24N
C
NFH
CMH600DU-24N
C
NFH

Voltage

1200V

Current
100A
150A
200A
300A
400A
600A

Circuit Package
A
2in1

B
C

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Electric ADVANCEE March 2015

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TECHNICAL REPORTS
E

characterristics remainn the same as those oof theconventioonal products, the driving circuit requirres nomodificatiion for the repplacement.

Fig. 2 Exteernal view of modules
m

4.. Conclusioon
The combbined technollogies of thee existing Sii
deevice and addvanced SiC device havee achieved amuch higher peerformance thaan that of thee conventionall
high-frequency NFH Series module. By increasing theeeqquipment operating frequenncy, it is possiible to reducee
the size of reacctor componeents, and hencce reduce theesizze, weight, annd cost of the equipment. Inn response too
diversified user needs, we w
will continue to develop highhvaalue-added prooducts.
References
R(1) Mitsuharu Tabata, et aal.: “The NF Series: Neww
Trench-typee IGBT Modu les with Low Power Drive”,,
Mitsubishi Denki Giho, 777, No. 9, 563–566 (2003))(in Japanesse).
(22) Yuuji Miyazzaki, et al.: “I GBT Module “NFM Seriess
for High Frrequency Appplication”, Mitssubishi Denkii
Giho, 80, No.
N 6, 411–4144 (2006) (in Jaapanese).

300

160

Di_S
SW Loss140

Di_D
DC Loss120

Tr_S
SW Loss
Tr _D
DC Loss100
80
60

Currennt NFH series

Power loss (W)Power loss (W)wer loss and increaseiin
3.2 Reduuction in pow
Swittching Frequeency
Figurre 3 shows thhe breakdownn of the poweer loss
per half m
module of the 1,200 V/100 A rated convenntionaland new power moduules. Assuminng applicationn to a
general-ppurpose power supply, the operatingocondditions
are set too provide an outputoof 30-A
A sinusoidal ccurrent(effective value) at a switching frequency of 300 kHz.
Under thhese operatinng conditionss, the hybridd SiC
module reduces the power losss by almost 40%
comparedd with the coonventional NFH Series. TThis ismainly aattributable too the reduction in the diodeswitching loss. This reduction levvel is sufficieent tomprove the tootal power coonversion efficciency of theeimpoower electronnics system. As an alternative, theereeduction in power loss can be used for increasing theeswwitching frequency. Figure 4 compares thhe power losss– switching freqquency relatioonship at varyying switchinggoundder the samme operatingg
freequencies, otherwisecoonditions as thhose of Fig. 3.. According too the results, iff
the power loss is kept equal,, the switchingg frequency off
the hybrid SiC module can bbe doubled froom that of thee
FH Series.
coonventional NF

200

Hybrid SiC
S module
100

40
20
0

0

Current NFH
H series

Hybrid SiC modulemFig. 3 Power loss (30 kHz)

1

10

100

Switchingg frequency (kHHz)

Fig. 4 Frrequency depeendence of power loss

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Next-Generation Power Module for
Automotive Applications – J1-Series
Authors: Mikio Ishihara* and Kazuaki Hiyama*In recent years, electric vehicles (EVs) and hybrid
electric vehicles (HEVs) have evolved remarkably, andin turn, there is a growing demand for higher
performance, smaller, and lighter power modules as
key components.
In response to these market needs, the smaller,
lighter, higher-performance “J1-Series” has beendeveloped. A direct water-cooling structure wasadopted to achieve 30% lower thermal resistance, 40%
smaller footprint, and 76% lighter weight.
1. Outline of J1-Series Power Module
The J1-Series comprises automotive power
semiconductor modules integrating six each of seventh
generation insulated-gate bipolar transistors (IGBTs)
and seventh generation diodes in a pin-fin type direct
water-cooling package (Fig. 1).
U
V

P

N

directly monitor the chip temperature.

Fig. 2 Circuit diagram of J1-Series

2. New Package Structure
To implement the development concept, a new
package structure has been developed for the
J1-Series (Fig. 3).

Pin -finW

Fig. 1 External appearance of J1-Series power module

The product lineup covers various user needs bymeans of four models with the same outer dimensions
and electrode layout, but with different ratings (Table 1).
Fig. 3 Internal package structure of J1-Series
Table 1 J1-Series Power Module Lineup
Model

Ratings(Ic/Vces)

Vce(sat) Typ. Package size
@Ic, 25°C(mm)

CT600CJ1A060 600A/650V

1.4V

CT400CJ1A090 400A/900V

1.7V

CT300CJ1A120 300A/1200V

1.7V

CT300CJ1A060 300A/650V

1.4V

120×115.2×31(6-in-1)

As shown in the circuit diagram (Fig. 2), theinternal connection of the J1-Series uses a 6 in-1
configuration for size reduction and efficient installation
at the user’s site. In addition, each IGBT chip isprovided with a current sensor for short-circuit
protection as well as an on-chip temperature sensing
diode for overtemperature protection, which is able to*Power Device Works

The J1-Series no longer uses heat sink grease as
required by the previous structure; instead, it isequipped with a cooling fin integrated with the module
to allow direct cooling and improve the cooling
performance. In addition, by optimizing the shape andlayout of the fin, and eliminating the solder layer
beneath the isolation layer, the thermal resistance
between the chip and the cooling water, Rth(j−w), is
reduced by more than 30% from the level of theconventional product that consists of three J-Seriestransfer-molded power modules (T-PMs) mounted on a
Cu cooling fin with the heat sink grease between them(Figs. 4 and 5).
To increase the current carrying capacity and thus
reduce the package size, a direct-lead-bonding (DLB)

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TECHNICAL REPORTS

structure has been adopted (Fig. 6), where the uppersurface of the chip is directly bonded to the Cu lead.
Compared to the conventional wire bonding (WB)
structure, the contact area can be expanded, and thus
the current carrying capacity can be significantly
improved. In combination with the previously described
improved cooling performance, the DLB structure has
successfully reduced the package size and hence thefootprint by 40%*1 (Fig. 7).
In addition, the DLB structure ensures more
uniform chip temperature while power is suppliedcompared to the WB structure, and thus generates lessthermal stress in the chip and improves the power cycle
tolerance.
The J1-Series uses aluminum as the cooling fin
material to provide high corrosion resistance against
cooling water and to reduce the weight by 76%*2 fromthe conventional product (Fig. 4).
As described above, the J1-Series is smaller andlighter, and has higher cooling performance andenhanced current carrying capacity.
3. Evaluation Kit
To help the user evaluate the J1-Series, anevaluation kit has been newly designed and prepared
as a support tool. The kit consists of a driver board, aDC-link capacitor and a water-cooling jacket. It is
optimized to enhance the features of the J1-Series, thatis, “higher performance” and “smaller and lighter”. The
photo in Fig. 8 shows the J1-Series PM and driverboard mounted on the water-cooling jacket.
The driver board is configured with an IGBT gate
driver IC (M81603JFP), newly developed for the
J1-Series PM.

Fig. 4 Conventional product (J-Series T-PM with
Cu fin)Fig. 7 Comparison of footprints of J1-Series
and conventional product
Water jacket

Fig. 5 Comparison of thermal resistance of
J1-Series and conventional product

J1-Series (6-in-1)

Fig. 8 Evaluation kit for J1-Series

Fig. 6 Comparison of conventional WB and DLB
structures
1

J1-Series 120×115 [mm2], Conventional product 220×105 [mm2]Driverb d

2

J1-Series 335 [g], Conventional product 1250 [g]8TECHNICAL REPORTS

J1-Series by evaluating its electrical characteristics andthermal resistance. Under the conditions of carrier
frequency fc = 5 [kHz], cooling water temperature Tw =65 [°C], and cooling water flow rate = 10 [l/min], acurrent carrying capacity of 600 A (= 424 A rms) or
higher was demonstrated even when the electricalparameters and thermal resistance were set to the
maximum values.

Fig. 9 OC trip level of J1-Series measured withevaluation kit

4. Gate Driver IC (M81603JFP)In addition to the protection functions equivalent tothose of the conventional intelligent power module(IPM), namely, short-circuit protection (SC),overtemperature protection (OT) and undervoltage
protection (UV), the gate driver IC, M81603JFP, isequipped with the following additional gate driver andprotection functions all integrated in a single IC
package.
(1) By adding a function to switch the turn-off gate
resistor according to the chip temperature, the
IGBT switching loss is reduced by 20%.
(2) By adding a correction circuit for the temperature
characteristics of the overcurrent protection (OC)function, it is possible to lower the level of OC
sensitivity to the temperature and thus it is nolonger necessary to consider the chip temperature
margin in the product design. Figure 9 shows themeasurement results for the OC trip level when thecorrection is used.
(3) By adding a circuit to switch the gate drive voltage
from 12.7 V to VDD voltage*3 during the turn-on
period, the maximum short-circuit current is limited
to below a certain level. In addition, the OC circuit
is optimized to reduce the response time of theprotection circuit at the time of short circuit. These
additional features have reduced the power loss
during the short-circuit period by 50%, and thus the
product design no longer needs to consider the
tradeoff between chip performance and short-circuit
tolerance.
(4) By providing an independent soft shutdown gate
resistor to each of the SC and OC circuits, thesurge voltage in the case of a short circuit is halved
and the delay time in the case of an overcurrent isalso halved.

Fig. 10 Verification of current carrying capacity ofCT600CJ1A060

6. Conclusion
In response to EV and HEV market needs, the new“J1-Series” of automotive power semiconductor
modules has been developed along with an evaluation
kit. The J1-Series achieves high performance, compact
size and light weight compared with the conventional
products, contributing to development of the automotive
inverter system.
The evaluation kit was developed as a user
support tool. It consists of a water-cooling jacket and adriver board that includes driving and protection circuits
optimized for the J1-Series.
We will continue to work on mass-producing
products, enhancing the product lineup and offering
products to users.

5. Verification of Current Carrying
Capacity
We verified the current carrying capacity of the3Power supply voltage of the IGBT driver circuit
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TECHNICAL REPORTS

Technologies for Seventh Generation
High Performance, High Ruggedness
Power Chips
Authors: Kenji Suzuki* and Fumihito Masuoka*

For the evolution of power electronics, it isessential to enhance the performance of Insulate Gate
Bipolar Transistors (IGBTs) and diodes, both mounted
on the power modules. Since the late 1980s, Mitsubishi
Electric has been developing low-loss structures for
IGBTs such as by fine pattern processing and the
CSTBTTM(1-2). Diode performance has also been
improved by thin wafer processing and cathode profile
optimization.
This paper presents the high performance andruggedness (i.e., wide Safe Operating Area (SOA))
seventh generation IGBT and diode, which have beendeveloped by employing an ultra-thin wafer process
and newly optimized profiles in the backside doping
layer.
1. Seventh generation IGBTThe first to third generation IGBTs were of theplanar type structure, and their performance was
improved by applying the conventional finer cell-pitch
patterning technology. The fourth and later generations
adopted a trench-type structure instead; and the fifth
and later generations adopted the Mitsubishi Electric’s
proprietary CSTBTTM structure, where a Carrier-Stored(CS) layer is formed beneath the Channel Dope layer.
Since the CS layer can enhance the electron injection
efficiency to hold high enough holes on the emitter side
during on-state, i.e. carrier storing effect, it is possible
to reduce the on-state forward voltage drop Von. The
sixth generation IGBT employed the narrower
trench-gate pitch to enhance the carrier storing effectand the performance was further improved. In addition,
the high energy ion implantation was used to form the
CS layer, and the variance in the threshold voltage was
successfully reduced.
The performance of the IGBT is described by the
Figure Of Merit (FOM) defined by:
FOM =

JC
VCE ( sat ) × E off(1)

where JC (A/cm2) is the collector current density,
VCE(sat)(V) is the collector-emitter saturation voltage(on-state voltage Von), and Eoff (mJ/cm2/A/pulse) is the*Power Device Works

normalized turn-off energy loss.
The sixth generation IGBT achieved far higher
performance than the first generation: the FOM of the
1200V class IGBT was increased by more than 10-foldfrom the first generation. Additional improvements havealso achieved the required product characteristics ofhigh reliability such as high temperature operation andhigh ruggedness, and those are based upon the
improved termination and backside structures as wellas the metal oxide semiconductor (MOS) structure.
Figure 1 shows the cross-sectional schematics ofthe sixth and seventh generation IGBTs. The 600V
class seventh generation IGBT employs the Light
Punch-Through (LPT) structure by using the ultra-thinwafer process to improve the trade-off between Von andEoff. At the same time, the area ratio between the N+
emitter and P+ region of the gate structure as the MOS
cell is also optimized to maintain the sufficiently low
saturation current, thus ensuring the wide Short Circuit
SOA (SCSOA)(3).
Emitter electrode

Ultra-thinwafer process
is employedTrench gatep+ layern+ emitter layer
Channel-doped
layer
Carrier-stored(CS) layern layern+ buffer layer
p+ collector layer
Collector electrode(a) Sixth generation IGBT(b) Seventh generation IGBT

Fig. 1 Cross-sectional schematics of the sixth andseventh generation IGBTs

Figure 2 shows the output VCE-JC characteristics ofthe sixth and seventh generation 600V class IGBTs. In
the seventh generation IGBT, the LPT structure
reduced the concentration in the P+ collector and N+
buffer layers, which keeps the built-in potential (voltage)
lower than that of the sixth generation IGBT, and10

Cross point of sixtth
generation IGBT

TTurn-off loss caused bybthhe tail current is grea
atly
reeduced.

VCE (V)

Cross point of sevventh
generation IGBTIC (A)TECHNICAL REPORTS
E

Six
xth generation IGBT Tj = 25°C
Six
xth generation IGBT Tj = 125°C
Sev
venth generation IGBTT Tj = 25°C
Sevventh generation IGBTT Tj = 125°C

Tim
me (μs)Fig. 3 Turn--off waveformss of sixth and the seventh
generation IGBTs

enth genera
ation diodee
2. Seve
The free wheelingg diode has reeduced the foorward

VCE (V)

improved the more thaan 0.1V of Von at or arounnd therated currrent density of 500A/cm2. In addition in theseventh ggeneration IGBT, the trade--off between t he Von
and Eoff hhas been adjuusted by the backsideb
P coollector
concentraation, so as too exhibit a loweer cross pointt of the
VCE-JC cuurve suitable foor parallel opeeration. The seeventh
generatioon IGBT requuires no carrrier lifetime ccontrol
process ssuch as electrron beam irraddiation. Thereffore, it
exhibits sstable electricaal characteristics for a longg time,and is ssuitable for highhtemperature, large ccurrent
operationn.
Figurre 3 shows thhe turn-off wavveforms of thee sixthand seveenth generatioon IGBTs, booth using 6000V/10A
rated pow
wer chips andd measured under the fol lowing
conditionss: collector-eemitter voltage VCE = 300V,
gate-emittter voltage VGE
ccurreent IC =G = 15V/0V, collector
10A, andd temperaturee Tj = 125degC. The seeventh
generatioon IGBT has a lower tail currrent than thatt of thesixth genneration and has
h reduced the turn-off looss by
about 34%%. Also, by opptimizing the backsideb
P-coollector
concentraation, the sevventh generattion IGBT, jusst likethe sixth, has successffully suppresssed the oscillaation in
the turn-ooff waveform.
Figurre 4 shows the waveform
ms of the seeventh
generatioon IGBT that demonstratedthhe characterisstics of
the SCSOOA. As the described above, the optiimized
MOS structure mainntained the saturation ccurrent
sufficientlly low to enhaance the latchh-up tolerancee. As aresult, a wide SCSOOA that sattisfies the pproductrequiremeents is ensureed up to a puulse width of 2.5μs
under thee conditions ofo VCE = 400V, VGE = 15V/0V
V, andTj = 125ddegC.
So, tthe seventh geeneration IGB
BT has achieveed theexcellent performance with an FOM of 1.8 times oof thatof the ssixth generation maintaininng an even wider
SCSOA.

IC (A)

Fig. 2 O
Output characteristics of sixtth and seventhh
generation IGBTs

Timee (μs)

Fig. 4 SCSOA
A waveform off seventh geneeration IGBTw
processs
vooltage drop VF by employi ng the thin wafer
annd optimizing the cathodee profile(4). WhileW
the thinn
waafer process is effective foor reducing thhe VF for bothh
the IGBT and diode, it in turn reducess the marginn
aggainst a snaap-off voltagee endurancee during thee
reeverse recovery time periodd, and hence increases theerissk of device breakdown. This time, thhe thin waferr
prrocess has beenb
employyed together with a neww
baackside cathode doping proofile to develop the seventhh
geeneration diodde(5).
Figure 5 shows the crooss-sectional schematics
soff
the conventionaal and seventhh generation diodes. In thee
seeventh generation diode, there are partial P typee
reegions on thee cathode sidde. This struucture avoidss
caarriers from an absence time period around theecaathode even underuthe deppletion severeely hitting theecaathode conditions during thhe reverse reecovery modee
opperation. As a result, the eelectric field onn the cathodee
sidde is relaxed and thus the oscillation phhenomenon iss
prrevented.
Figure 6 shhows the outpput VAK-JA chaaracteristics off
12200V class conventional and seventh generationn
diodes. Maintaaining the low
w VF characcteristics, thee
seeventh generation diode hhas reduced the cathodee
electron injectioon efficiency tto keep a low
w current levellmoff the cross pooint between the VAK-JA cuurves at room

Mitsubishi Elecectric ADVANCE March 2015

11

TECHNICAL REPORTS
E

and highh temperaturees. This tennds to reducce theunexpected current inncrease when the tempeeraturerises at or around thhe rated currrent, and thuus theseventh ggeneration dioode is suitable for the chip pparallel
operationn of the high poower module.
Figurre 7 shows the reverse recovery wavefo rms of
conventioonal and seventh generationn diodes, bothh using
1200V/100A rated poweer chips and measuredmundder theconditionss of VAK = 8000V, IA = 0.6A, anda Tj = 25deegC, inwhich condition the coonventional dioode tends to cause
oscillationn. The conveentional diodee generates a highvoltage ppeak (snap-offf) when the taail current is ssharply
shut off, as depicted by broken circles
cin Figg.7. In
contrast, with the seveenth generatioon diode, almoost no
voltage surge is obbserved andd the snap--off issuccessfuully preventedd. This peak voltage, definned as
the snapp-off voltage Vsnap-off, waas measuredd withincreasingg Vcc applied during the revverse recoverry time
period. The result reveealing the ultim
mate characteeristics
is shown in Fig. 8. Thee Vsnap-off of thee conventionall diodeis heavily deppendent on tthe Vcc, andd the Vsnap-offf
exxceeds the raated breakdow
wn voltage att Vcc = 800V,,
annd at Vcc = 900V the chip w
was destroyed.. On the otherr
haand, the seeventh geneeration diode effectivelyy
suuppresses the Vsnap-off. This suppression effect is moreecoonspicuous withw
increasinng Vcc, andd allows theereecovery operaation even at Vcc = 1000V
V without anyy
brreakdown.
Consequenntly, the seeventh geneeration diodee
makes it possible to reducce the wafer thickness byy
abbout 21% froom the sixth generation level withouttemmerging oscillation phenoomenon, resuulting in theereeduction of VF and reverse rrecovery loss Err.
The FOM of the diode is also defineed by Eq. (1),,where the collector currennt density JC (A/cm2) iss
reeplaced with thhe anode currrent density JA (A/cm2), theecoollector-emitter saturation voltage VCEE(sat) (V) thatt
deetermines thee steady-statte loss with the forwardd
vooltage drop att 125degC VFF (V), and thee turn-off losss
2
Eoff
pulse) with thhe reverse reccovery loss att
o (mJ/cm /A/p
10

Anode electrode0

p+ anodee layer

IA ((A))

IA

-10
-20
1200

n− layern+ bufferr layer

VAK (V)

900
600

VAK

Convention
nal diodeSeventh ge
eneration
diode

300

p+ layer n+ layeer Cathode electrodde(a) Convventional diode00.3(b) Seventh generation diodde

0.5

0.7

0.9

1..1

1.3

Time (μs)

Fig. 5 Cross-section
nal schematicss of conventioonaland seventh generation
g
dio
odes

Fig. 7 Reverse recovery w
waveforms of conventionalcsgeneraation diodes underuand seventh
oscilllation-prone coonditions

600
Conventio
onal diode Tj = 25°C

Vsnap-off (V)400
JAK (A/cm2)

Conventional dioode wasdestroyed at 9000 V.

Conventio
onal diode Tj = 125
5°C
Seventh generationg
diode
Tj = 25°C
C
Seventh generationg
diode
Tj = 125°C

500

300

200
Convenntional diode100

Seventhh generation diode

0
0.0
0

0.5

1.0

1.5
5

2.0

2.5

VAK (V)

Fig. 6 Output charaacteristics of conventionalca ndseventh geneeration diodess

Vcc (V)

Fig. 8 Vcc – Vsnap-off relatiionship of con
nventionalandd seventh geneeration diodes underosccillation-prone conditions
122

TECHNICAL REPORTS

125degC Err (mJ/cm2/A/pulse). In terms of the FOM, theseventh generation diode has achieved a drastic
improvement, 2.7 times higher than that of theconventional diode.
We are currently developing a 1200V class IGBT
and diode that employ the new ultra-thin wafer process
and the backside doping profile already applied to 600V
class devices. In addition, we plan to apply the seventh
generation technologies to all the diodes with a higher
breakdown voltage including the 6500V class chips. We
will continue to serve a series of high performance andhigh quality Si power chips to all the applications of themarkets.
References(1) H. Takahashi, et al., “Carrier Stored Trench-Gate
Bipolar Transistor (CSTBT) – A Novel Power
Device for High Voltage Application” Proc. ISPSD‘96, pp. 349-352, (1996).
(2) K. Sato, et al., “New chip design technology for
next generation power module”, Proc. PCIM2008,
pp. 673-678, (2008).
(3) Y. Haraguchi, et al., “600V LPT-CSTBT™ on
advanced thin wafer technology”, Proc. ISPSD’11,
pp. 68-71, (2011).
(4) T. Takahashi, et al., “The 6th Generation IGBT &Thin Wafer Diode for New Power Module”,
Mitsubishi Denki Giho, 84, No. 4, pp. 224-227(2010) (in Japanese).
(5) F. Masuoka, et al., “Great Impact of RFC
Technology on Fast Recovery Diode towards 600V
for Low Loss and High Dynamic Ruggedness”,
Proc. ISPSD’12, pp. 373-376, (2012).

Mitsubishi Electric ADVANCE March 2015

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TECHNICAL REPORTS

Low On-Resistance SiC-MOSFET witha 3.3-kV Blocking Voltage
Authors: Kenji Hamada*, Shiro Hino* and Takeshi Kitani**

An SiC-MOSFET with a 3.3-kV blocking voltage
has been developed by using Mitsubishi Electric’s
proprietary low on-resistance technology that partially
increases the doping concentration at the surface of then-SiC drift layer. By optimizing the cell structure
parameters and ion implantation conditions, the new
MOSFET has achieved a specific on-resistance of 14mΩcm2 and an avalanche breakdown voltage of 3.9 kV.
1. Background
Silicon carbide (SiC) is attracting attention as a
new semiconductor material expected to replace silicon(Si) material. SiC enables the fabrication of
low-resistance, high-voltage power devices surpassing
Si power devices. Mitsubishi Electric is currently
working on reducing the power loss, enhancing theperformance, and increasing the current of the SiC
metal oxide semiconductor field effect transistor(SiC-MOSFET) and SiC Schottky barrier diode(SiC-SBD), which are both SiC unipolar devices having a
blocking voltage in the range of 600 V to 1.7 kV. In
parallel, Mitsubishi Electric has also been developing
application technologies such as employing SiC powerdevices in inverter applications, and has demonstrated
improved efficiency and downsizing of the equipment.
The SiC unipolar devices are also applicable toindustrial and railway vehicle power modules, which
require an even higher blocking voltage. Mitsubishi
Electric has integrated SiC-SBDs and Si insulated-gate
bipolar transistors (Si-IGBTs) to fabricate a prototype
hybrid SiC module with a 3.3-kV blocking voltage, anddemonstrated its 1.5 kV/ 2 kA switching operation.(1) To
increase the efficiency of the module even further, the
Si-IGBT needs to be replaced with an SiC switching
device. Therefore, an SiC-MOSFET with a blocking
voltage of 3.3 kV has been strongly desired. This paper
describes the development of Mitsubishi Electric’s
SiC-MOSFET with a 3.3-kV blocking voltage.
2. Fabrication of SiC-MOSFET with a
3.3-kV Blocking Voltage
2.1 Device structure
The basic structure of the SiC-MOSFET developedby Mitsubishi Electric is of a double diffused MOSMET(DMOSFET), which is widely adopted for Si power*Advanced Technology R&D Center**Power Device WorksMOSFETs. The SiC-MOSFET with a 3.3-kV blocking
voltage was fabricated on a 30-μm-thick n-SiC drift
layer epitaxially grown on an n-type 4H-SiC substrateand having a doping concentration of 3×1015/cm3. As
the termination structure, the uniquely developed field
limiting ring (FLR)(2) was adopted to allow an avalanche
breakdown to occur in a stable manner at a drain
voltage of about 4 kV. The SiC-MOSFETs were
fabricated with the following cell structure parameters:
channel length = 0.4–1.6 μm, length of junction field
effect transistor (JFET) = 1.6–3.6 μm, cell pitch = 11 μm,
and active area = 4.8×10−5 to 9.0×10−2 cm2. Annealing
for the activation of ion implanted impurities was
performed at 1700°C. A 50-nm-thick gate oxide wasformed by the thermal oxidation and nitridation
processes. Ni silicide was formed for the source anddrain contact electrodes.
2.2 Reduction in on-resistance of MOSFET (JFET
doping)
The 3.3-kV SiC-MOSFET is designed to have arelatively low doping concentration in the drift layer,
which is likely to increase the resistance of the JFET
region. To reduce the JFET resistance, it is effective toextend the JFET length and increase the doping
concentration in the JFET region (JFET doping).
However, both of these methods in turn increase theelectric field of the gate oxide and cause a negative
effect on the long-term reliability and the MOSFET’s
blocking voltage. Thus there is a tradeoff between the
JFET resistance and the gate oxide electric field, andthe optimum design of both the JFET length and JFET
doping conditions is extremely important.
This time, by utilizing the process/device simulation
technique, the JFET doping parameters have been
optimized to a doping concentration of 1×1017/cm3 anda thickness of about 1 μm. JFET doping was performedby multiple ion implantation of nitrogen atoms as then-type impurity, while the surface region of the drift
layer was not doped to avoid any negative impact on
the MOSFET’s channel characteristics or the gate oxide
electric field.
3. Electrical Characteristics of 3.3-kV
SiC-MOSFET

14

TECHNICAL REPORTS

3.1 Cell structure dependence of static characteristics
Figure 1 shows the output and the blocking
characteristics of the SiC-MOSFET with an active area of
9.0×10−2 cm2. A specific on-resistance of 14 mΩcm2 was
obtained at a gate voltage of 15 V and a drain current
density of 100 A/cm2. An avalanche breakdown voltage
of about 3.9 kV was obtained at a gate voltage of −10 V.
Figure 2(a) shows the channel length dependenceof the specific on-resistance of SiC-MOSFETs bothhaving an active area of 2.0×10−3 cm2. The specificon-resistance decreases monotonically with shrinking
channel length regardless of the JFET doping. The
device with JFET doping has a specific on-resistancethat is 8 to 12 mΩcm2 lower than that of the
SiC-MOSFET without JFET doping. Either device
exhibits an effective channel mobility of about 22
cm2/(V·s). Figure 2(b) shows the JFET length
dependence of the specific on-resistance. The specificon-resistance remarkably increases with shrinking
JFET length regardless of the JFET doping. The
SiC-MOSFET with JFET doping exhibits a specific(a) Output characteristics

on-resistance relatively less dependent on the JFET
length, which suggests that the depletion in the JFET
region may have a significant impact on the specificon-resistance.
Figure 3 shows the analysis of the specificon-resistance. The channel resistance decreases withshrinking channel length regardless of the JFET doping.
This is due to the increase in the channel width density.
On the other hand, the JFET resistance and drift
resistance increase with shrinking JFET length; inparticular, the SiC-MOSFET without JFET dopingshows a remarkable increase. To reduce the total
resistance of the 3.3-kV SiC-MOSFET, it is quite
effective to reduce the JFET resistance by means of
JFET doping.
Figure 4 shows the JFET length dependence of theavalanche breakdown voltage at a gate voltage of−10 V. In the case of the SiC-MOSFET with JFET
doping, the breakdown voltage decreases withincreasing JFET length, which is caused by anincreasing electric field at the edge of the p-well. In(b) Blocking characteristics

Fig. 1 Output characteristics and blocking characteristics(a) Channel length dependence(b) JFET length dependence

Fig. 2 Channel length and JFET length dependence of specific on-resistance
Drain current(A)Mitsubishi Electric ADVANCE March 2015

15

TECHNICAL REPORTS

order to achieve both a low specific on-resistance and ahigh blocking voltage, optimum design of both the JFET
length and the JFET doping conditions is crucial.

highly effective technique for reducing the MOSFET’s
on-resistance over a wide temperature range from room
to high temperatures.

3.2 Temperature dependence of specificon-resistance
Figure 5 shows the temperature dependence of thespecific on-resistance of the SiC-MOSFET having achannel length of 0.7 μm, a JFET length of 3.0 μm, andan active area of 4.8×10−5 cm2. The MOSFET with
JFET doping exhibits a smaller change in the specificon-resistance than that without JFET doping, namely,
an increase from 12 to 23 mΩcm2 with increasing
temperature from room temperature to 175°C. This isdue to the decrease in the temperature dependence ofthe electron mobility in the JFET region, which resultsfrom an increased influence of ionized impurity scattering
due to the JFET doping. The SiC-MOSFETs have athreshold voltage of about 2 V at room temperature andabout 1 V at 175°C, both at a drain voltage of 10 V andregardless of the JFET doping. The JFET doping is a

4. Conclusion
Mitsubishi Electric has developed an SiC-MOSFET
with a 3.3-kV blocking voltage to further improve theefficiency of existing industrial and railway vehicle
power modules. By means of the JFET doping
technique and optimizing device structural parameters,
the specific on-resistance has been drastically reduced
over a wide temperature range from room to hightemperatures. By utilizing these technologies,
Mitsubishi Electric has commercialized the world’s first
railway inverter systems for 1500-V DC catenaries thatincorporate 1500-A-rated, high-capacity all-SiC power
modules.
Part of this research work was conducted underthe “Novel Semiconductor Power Electronics Project
Realizing a Low Carbon-Emission Society”
commissioned by the New Energy and Industrial(a) With JFET doping(b) Without JFET doping

Fig. 3 Analysis of specific on-resistanceFig. 4 JFET length dependence of avalanche
breakdown voltage

Fig. 5 Temperature dependence of specificon-resistance16

TECHNICAL REPORTS

Technology Development Organization
Ministry of Economy, Trade and Industry.

(NEDO),

References(1) H. Watanabe, et al.: Fabrication and Evaluation of
3.3kV SiC-SBDs, 2012 Annual Meeting of theInstitute of Electrical Engineers of Japan, No. 4(2012) 254.
(2) K. Hamada, et al.: Experimental and Simulated
Characterization of 13 kV-Class 4H-SiC PiN Diodes
with Double FLR Termination, 22nd Meeting on SiC
and Related Wide Bandgap Semiconductors (2013)
B-31.

Mitsubishi Electric ADVANCE March 2015

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TECHNICAL REPORTS

Packaging Technologies for HighTemperature Power Semiconductor Modules
Authors: Yasunari Hino*, Nobuo Yokomura** and Hiroaki Tatsumi***1. Introduction
With growing awareness of the environment andenergy saving, power electronics are being applied inincreasingly diverse fields, ranging from consumer andindustrial inverters to electric railways, automobiles, andsolar and wind power generation systems. As the key
components of power electronics, power semiconductor
modules are required to efficiently control the current,
enhance the durability and reduce the size under harsh
operating conditions.
Silicon carbide (SiC) devices can operate at highspeed with low power loss, making it possible todrastically improve the module performance. In addition,
since such devices can also operate at hightemperatures, the cooling structure and hence thepower semiconductor module can be made smaller.
However, the high-temperature operation of power
semiconductor modules imposes a significant
engineering challenge for realizing not only
high-temperature operation of the chips, but also
durability of the materials and package structure at hightemperatures.
With this background, Mitsubishi Electric is
focusing on developing the packaging structure,materials, and their component technologies toward thelaunch of high-temperature power semiconductor
modules. This paper describes the enhancement ofhigh-temperature durability of bonding materials, aswell as the improvement of bonding reliability andservice life especially against temperature cycles, both
required for the high-temperature operation of power
semiconductor modules.

2. Component Technology of
Packaging⎯Sintering Bonding
Since conventional tin (Sn) solder material is
expected to exceed the limit at a certain high operating
temperature for power semiconductor modules, we
examined the sintering bonding technique that utilizes
nanosized metal particles covered with organic
protective coating and the “depression of melting point”
phenomenon, where the melting point lowers as theparticle size becomes smaller.
The bonding material consists of silver (Ag)nanoparticles covered with organic protective coating
and several solvents determined by considering thesintering dispersibility, viscosity, and drying resistance.
When heated, the solvents vaporize and the organic
protective coating is thermally decomposed, then the
Ag nanoparticles come into contact, and are sinteredand bonded together at a temperature that is lower thanthe Ag’s melting point. Consequently, the bonded zone
becomes highly heat resistant, having the intrinsic
melting point of metal. This time, we used nanosized Ag
particles, which allows the bonding to be completed at aheating temperature similar to that of the conventional
Sn solder material, while the bonded zone has amelting point over 900°C.
2.1 Ag Nanoparticle Sintering Bonding Process
As illustrated in Fig. 1, the pasty material that
contains dispersed Ag nanoparticles is screen printed
on the substrate. The chips are then mounted in placeand hot pressed to complete the sintering bonding.
Note that we have developed and built prototype chip
mounting and hot press machines, which are dedicatedHeat & pressure

Ag nanoparticle paste

Upper die

Substrate

Lower dieChip(1) Printing(2) Chip mounting(3) Hot press

Fig. 1 Ag sintering bonding process*Power Device Works **Advanced Technology R&D Center ***Manufacturing Engineering Center

18

TECHNICAL REPORTS

to the sintering bonding process and capable ofmounting and hot pressing multiple chips
simultaneously.
Based on the above bonding process steps, basic
evaluation samples were fabricated (Fig. 2), and thereliability was verified on the sintering bonding using Ag
nanoparticles.
Mainelectrode

Case

Wire
Gel

Base plate
Substrate

Chipsintering bonded area remains in a good condition
without any crack development. This result indicatesthat the Ag nanoparticle sintering bonding will not be acontrolling factor of the power cycle life.
(2) Thermal cycle test
Crack development in the Ag sintering bonded
area was examined through the thermal cycle test witha temperature change between −40 and 175°C (ΔT =215 K). Figure 4 shows the images taken by scanning
acoustic tomography (SAT) before the test, and after
300, 600, and 900 cycles. With increasing cycles, verysmall white regions are observed, but no obvious
exfoliation is found in the bonded area. Figure 5 shows
the cross-sectional view of the sample after the thermal
cycle test (900 cycles). Any noticeable exfoliation
developed in the Ag sintering bonded area.

Ag nanoparticle
sintering bonding

Fig. 2 Structure of high-temperature power semiconductor
modules

2.2 Reliability Test
When power semiconductor modules are used forelectric railways, automobiles and other applications
under severe temperature conditions, cracks may occur
in the bonded zone caused by the thermal stressarising from a difference in the thermal expansion of thematerials inside the package. Therefore, we haveconducted power cycle and temperature cycle reliability
tests.
(1) Power cycle test
In addition to the evaluation samples with the Ag
nanoparticle material, we have also fabricatedreference samples using an Sn-Ag-Cu-Sb solder
material. The power cycle tests were conducted on both
samples at Tjmax = 175°C and ΔTj = 90 K. As a result,the Ag sintering bonded sample exhibited a power cycle
life about 5 times longer than that of the solder-bonded
reference sample. After the power cycle test, thebonded zone was examined by cross-sectional
observation as shown in Fig. 3. Reticulated cracks canbe seen in the solder bonded area, whereas theSolder bonding(a) Solder bonding

Bonding with Ag
nanoparticles(b) Bonding with Ag
nanoparticles

Fig. 3 Cross sections after power cycle test

Fig. 4 SAT images after thermal cycle test

Bondingwith Ag
nanoparticles

Fig. 5 Cross-section after thermal cycle test

3. Conclusion
This paper has described a bonding technology
thatutilizesthelow-temperature
sintering
characteristics of nanosized Ag particles. It is a
packaging component technology that enables power
semiconductor modules to operate at hightemperatures. This sintering bonding technology has
been verified to exhibit high temperature resistance,high reliability, and long service life. In addition to theAg sintering bonding technology, it is necessary todevelop innovative packaging design, material andmanufacturing processes for the commercialization ofhigh-temperature power semiconductor modules.
Based on Mitsubishi Electric’s long-accumulated
component technologies of packaging and mass
production, we will speed up the development toward
the launch of next-generation, high-temperature power
Mitsubishi Electric ADVANCE March 2015

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TECHNICAL REPORTS

semiconductor modules, striving to contribute toenvironmental protection and energy conservation.
References(1) Majumdar, G., et al.: New Technical Trend ofPower Modules, Mitsubishi Denki Giho, 86, No. 5,262−266 (2012) (in Japanese).
(2) Kashiba, Y., et al.: Semiconductors Yearbook 2014,
Nikkei BP. 217−227 (2013) (in Japanese).

20