第 60 回記念
フラーレン・ナノチューブ・グラフェン
総合シンポジウム
The 60th Anniversary Fullerenes-Nanotubes-Graphene
General Symposium

講演要旨集
Abstracts
2021 年 3 月 1 日（月） ～ 3 日（水）オンラインバーチャルシンポジウム
Online Virtual Symposium
主催 フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society
共催 ・ 後援
日本化学会
名古屋大学 CIRFE

協賛
日本物理学会
応用物理学会
高分子学会
電気化学会

The Chemical Society of Japan
Center for Integrated Research of Future Electronics,
Nagoya University

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

Abstract of
The 60th Anniversary Fullerenes-Nanotubes-Graphene
General Symposium
Sponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of Japan

Center for Integrated Research of Future Electronics, Nagoya University
Supported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan
Date : March 1st (Mon.) –3rd (Wed.), 2021
Place : Online Virtual Symposium
Presentation Time : S pecial Lecture (25 min presentation + 5 min discussion)

Invited Lecture (10 min presentation + 5 min discussion)
General Lecture (10 min presentation + 5 min discussion)
P o s t e r Preview (1 min presentation without discussion)

第 60 回記念フラーレン･ナノチューブ･グラフェン
総合シンポジウム
講演要旨集
主催 : フラーレン･ナノチューブ･グラフェン学会
共催･後援 : 日本化学会
名古屋大学未来エレクトロニクス集積研究センター
協賛 : 日本物理学会、応用物理学会、高分子学会、電気化学会
日時 : 2021 年 3 月 1 日(月)～3 月 3 日(水)場所 : オンラインバーチャルシンポジウム
発表時間 : 特別講演（発表 25 分 + 質疑応答 5 分）
招待講演（発表 10 分 + 質疑応答 5 分）
一般講演（発表 10 分 + 質疑応答 5 分）
ポスタープレビュー（発表 1 分・質疑応答 なし）

展示団体御芳名 (五十音順、 敬称略）
テレダイン・ジャパン（株）（株）日本レーザー

広告掲載団体御芳名 (五十音順、 敬称略）
オザワ科学（株）(株）コロナ社(株）セントラル科学貿易

テレダイン・ジャパン（株）

日本電子（株）(株）日本レーザー

Contents
Timetable.....................................................

i

Chairpersons ...............................................

ii

Program .......................................................

iii

Abstracts
Special Lecture ......................................

1

Invited Lecture.......................................

8

General Lecture .....................................

15

Poster .....................................................

46

Author Index ............................................... 130

目次
早見表.........................................................

i

座長一覧.....................................................

ii

プログラム.................................................

iii

講演予稿
特別講演 ...............................................

1

招待講演 ...............................................

8

一般講演 ...............................................

15

ポスター発表 .......................................

46

発表索引..................................................... 130

Timetable
March 1 (Mon)

March 2 (Tue)

March

( ed)

08:50

Opening

09:00

09:00

09:00

Special lecture
Shintaro Sato

Special lecture
Jamie arnerSpecial lecture
Ta ahiro ondo

09:30

Oral session
raphene andmaterials:

09:30

Oral session
raphene andmaterials:

09:30

Oral session
Carbon nanotubes:- Transport property- Optical property- Synthesis and growth- Electronic structure- Others

Coffee break- Applications

10:00

10:15

Coffee break

10:10

10:30

Special lecture
Hisashi Sugime

10:15

Invited lecture
atteo as uali

11:00

Invited lecture
Yan Li

10:30

Invited lecture
Junichiro ono

Oral session
Carbon nanotubes:

10:45

Invited lecture
en i Yasuda

11:00

Invited lecture
Yu Saito

11:15- Synthesis and growth

11:45

Poster preview

12:30

Lunch

13:45

Poster session

15:30

Coffee break

15:45

Special lecture
Jun Onoe

16:15

Oral session
Fullerenes:- Chemistry- Electronic structure- Optical property

11:15

T21

nnounce- Optical property- Others

13:45

Poster session

15:30

Coffee break

Oral session
Carbon nanotubes:

15:45

Special lecture
Ta ahiro orimoto- Others

16:15

Oral session
raphene andmaterials:

Poster preview

12:15

Lunch

13:30

Poster session

15:15

Coffee break- Applications- Electronic structure

15:30

ward cere on

16:00

Special lecture
Haru a Omachi

16:30

Invited lecture
Yuya Shima a i

Invited lecture
Es o auppinen

16:45

17:45

Oral session
raphene andmaterials:

Oral session
Carbon nanotubes:- Transport property

17:15

Closing- Applications- Chemistry- Electronic structure

Tutorial
Yoshihiro wasa

- Applications

Lunch

17:30

18:15

Oral session
Carbon nanotubes:

12:30

Coffee break

Coffee break

10:30

Poster preview

17:15

18:00

Coffee break

11:45

11:30

- Applications

ent

10:15

Others:- Synthesis and growth- Chemistry

18:00

an uetSpecial lecture: 25 min (Presentation) + 5 min (Discussion)
Invite lecture: 10 min (Presentation) + 5 min (Discussion)
eneral lecture: 10 min (Presentation) + 5 min (Discussion)
Poster previe : 1 min (Presentation)i座長一覧(Chairpersons)(敬称略)

３月１日（月）
セッション

時間

座長

特別講演 (佐藤 信太郎)

9:00 ～ 9:30

大淵 真理

一般講演

9:30 ～ 10:15

平原 佳織

特別講演 (杉目 恒志)

10:30 ～ 11:00

招待講演 (Yan Li)

11:00 ～ 11:15

一般講演

11:15 ～ 11:45

丸山 隆浩

ポスタープレビュー

11:45 ～ 12:30

Il Jeon

野田 優

井ノ上 泰輝特別講演 (尾上 順)

15:45 ～ 16:15

大野 雄高

一般講演

16:15 ～ 17:15

若林 知成

招待講演 (島崎 佑也）

17:30 ～ 17:45

一般講演

17:45 ～ 18:00

チュートリアル (岩佐 義宏）

18:15 ～ 19:45

大野 雄高

時間

座長

宮田 耕充

３月２日（火）セッション

特別講演 (Jamie Warner)

9:00 ～ 9:30

一般講演

9:30 ～ 10:00

招待講演 (Matteo Pasquali)

10:10 ～ 10:30

招待講演 (Junichiro Kono)

10:30 ～ 10:45

招待講演 (安田 憲司)

10:45 ～ 11:00

招待講演 (斎藤 優)

11:00 ～ 11:15

一般講演

11:15 ～ 11:30

ポスタープレビュー

11:30 ～ 12:15

中西 勇介

特別講演 (大町 遼)

16:00 ～ 16:30

岡田 光博
藤ヶ谷 剛彦

招待講演 (Esko Kauppinen)

16:30 ～ 16:45

一般講演

16:45 ～ 17:15

一般講演

17:15 ～ 18:00

高井 和之

時間

座長

特別講演 (近藤 剛弘)

9:00 ～ 9:30

岡田 晋

一般講演

9:30 ～ 10:15

浦江

一般講演

10:30 ～ 11:45

千足 昇平

ポスタープレビュー

11:45 ～ 12:30

小澤 大知

北浦 良
丸山 茂夫

中野 匡規

前田 優

３月３日（水）
セッション

大塚 慶吾
特別講演 (森本 崇宏)

15:45 ～ 16:15

小久保 研

一般講演

16:15 ～ 17:15

長汐 晃輔

ii

March 1 (Mon)08:50~09:00

Opening

Graphene and 2D materials: Applications
09:00~09:30

Special lecture

1S-1

Growth and Application of Carbon nanotubes, Graphene, and Graphene
Nanoribbons*Shintaro Sato1

Carbon nanotubes: Transport property
09:30~09:45
1-1

Correlation between the thermal and mechanical properties of the hightemperature thermal- treated carbon nanotube yarns*Ryo Shikata, Yuho Shigeeda, Hirotaka Inoue, Hiroo Suzuki, Wataru
Yajima, Tomohiro Nakagawa, Takeshi Nishikawa, Yoshifumi Yamashita,
Yasuhiko Hayashi, Masaki Hada

15

Unraveling Thermoelectric Dimensionless Figure-of-Merit of Aligned
Single-Walled Nanotube Thin-Film*Kan Ueji, Yota Ichinose, Yuya Matsuoka, Yohei Yomogida, Takashi Yagi,
Junichiro Kono, Kazuhiro Yanagi

16

09:45~10:00
1-2

Carbon nanotubes: Applications
10:00~10:15
1-3

Fabrication and characterization of oriented carbon nanotube/polymer
composite films for high thermal conductivity*Nikita Kumari, Maireyee Bhattacharya, Ryo Abe, Naofumi Okamoto,
Manish Pandey, Masakazu Nakamura

10:15~10:30

Coffee break

iii

17

Carbon nanotubes: Synthesis and growth
10:30~11:00

Special lecture

1S-2

14-cm-long carbon nanotube forest via in situ supplements of iron andaluminum vapor sources*Hisashi Sugime, Toshihiro Sato, Rei Nakagawa, Tatsuhiro Hayashi, Yoku
Inoue, Suguru Noda

11:00~11:15

Invited lecture

1I-1

What We Know about Single-Walled Carbon Nanotube Growth*Yan Li8

Effect of CO2 during annealing on formation of catalyst particles and growthof single-wall carbon nanotubes on substrates*Mochen Li, Hisashi Sugime, Suguru Noda

18

1-5

Formation of Ultra-slender CNTs via Field Emission Discharge of CNT
films*Yahachi Saito, Koji Asaka

19

11:45~12:30

Poster preview

12:30~13:45

Lunch

13:45~15:30

Poster session

2

11:15~11:30
1-4

11:30~11:45

Fullerenes: Applications☆1P-1

Formation of highly conductive N-type thermoelectric material by codeposition of fullerene and cesium carbonate*Tatsuma Izumi, Shinta Watanabe, Masato Nakaya, Jun Onoe

46

Carbon nanotubes: Chemistry☆1P-2

Chirality and helicity sorting of functionalized single-walled carbon
nanotube*Yui Konno, Michio Yamada, Yutaka Maeda

47

☆1P-3

Diameter-based separation of SWNTs through their mechanical interlocking
with nanorectangle*Guoqing Cheng, Naoki Komatsu

48iv

Carbon nanotubes: Transport property☆1P-4

Annealing Influence on Hall Measurement of Single-Walled Carbon
Nanotube Thin Films*Hiroki Date, Mika Nagatomo, Akari Kobayashi, Taiki Inoue, Takenori
Fujii, Esko Kauppien, Shigeo Maruyama, Shohei Chiashi

49

Graphene and 2D materials: Electronic structure☆1P-5

Theoretic Study of Anomalous Electric Polarization in Chiral Graphene
Nanoribbons*Daichi Obana, Katsunori Wakabayashi

50

Graphene and 2D materials: Optical property☆1P-6

Bulk photovoltaic effect in WSe2/black phosphorus heterostructure via
symmetry engineering*Yu Dong, Toshiya Ideue, Takatoshi Akamatsu, Ling Zhou, Sota Kitamura,
Mao Yoshii, Masaru Onga, Yuji Nakagawa, Kenji Watanabe, Takashi
Taniguchi, Junwei Huang, Takahiro Morimoto, Hongtao Yuan, Yoshihiro
Iwasa

51

Graphene and 2D materials: Others☆1P-7

Formation of self-assembled fibroin film on 2D materials*Rio Takizawa, Yoshiki Nakamura, Kazunori Motai, Mirano Tsukiiwa,
Chishu Honma, Yuhei Hayamizu

52

Graphene and 2D materials: Synthesis and growth☆1P-8

Evaluating the degree of unintentional doping in CVD-grown
MoS2 monolayer*Hibiki Naito, Yusuke Nakanishi, Hong En Lim, Yoshiyuki Nonoguchi, Kenji
Watanabe, Takashi Taniguchi, Takahiko Endo, Yasumitsu Miyata

53

Graphene and 2D materials: Transport property☆1P-9

Zeeman-type spin-orbit interaction induced Ising ferromagnetism at a vander Waals interface*Hideki Matsuoka, Masaki Nakano, Stewart Edward Barnes, Jun Ieda,
Sadamichi Maekawa, Mohammad Saeed Bahramy, Bruno Kenichi Saika,
Yukiharu Takeda, Hiroki Wadati, Yue Wang, Satoshi Yoshida, Kyoko
Ishizaka, Yoshihiro Iwasa

54☆1P-10Fabrication and transport properties of PN diodes based on chemicallydoped few-layer WSe2
*Shunta Suzuki, Hiroto Ogura, Yusuke Nakanishi, Hong En Lim, TakahikoEndo, Yoshiyuki Nonoguchi, Yasumitsu Miyata

55v

Fullerenes: Synthesis and growth
1P-11

Synthesis and Characterization of Lithium-Ion-Encapsulated [70]Fullerene
Li+@C70: A New Ionic Endohedral Fullerene*Daiki Kitabatake, Hiroshi Ueno, Kazuhiko Kawachi, Yasuhiko Kasama,
Shinobu Aoyagi, Keijiro Ohshimo, Fuminori Misaizu

56

Carbon nanotubes: Synthesis and growth
1P-12

Growth mechanism and handedness relation of one-dimensional van der
Waals heterostructures*Yongjia Zheng, Akihito Kumamoto, Rong Xiang, Kaoru Hisama, Keigo
Otsuka, Yuta Sato, Taiki Inoue, Shohei Chiashi, Daiming Tang, Qiang
Zhang, Anton Anisimov, Esko Kauppinen, Kazu Suenaga, Yuichiro Ikuhara,
Shigeo Maruyama

57

1P-13

Effect of hydrogen on the microplasma synthesis of carbon nanotubes*Takashi Tsuji, Jaeho Kim, Hajime Sakakita, Guohai Chen, Kenji Hata, Don
Futaba, Shunsuke Sakurai

58

Carbon nanotubes: Transport property
1P-14

Thermal conductivity of C60 encapsulated single-walled carbon nanotubes
thin films*Rikuto Abe, Kan Ueji, Yohei Yomogida, Kazuhiro Yanagi

59

1P-15

Thermal boundary resistance of aligned films of single-walled carbon
nanotube using time-domain thermoreflectance method*Atsuhiro Katagiri, Kan Ueji, Yuya Matsuoka, Junko Eda, Hitomi Okubo,
Yohei Yomogida, Junichiro Kono, Takashi Yagi, Kazuhiro Yanagi

60

Carbon nanotubes: Optical property
1P-16

Local Grafting of Polymer Radical on the Surface of Single-Walled Carbon
Nanotubes and the Enhanced Photoluminescence in the Near-Infrared
Region*Yukiko Nagai, Kenta Nakamura, Tsuyohiko Fujigaya

61

Carbon nanotubes: Applications
1P-17

Modeling and Optimization of Tensile Strength of CNT/HDPE Composites
Using Response Surface Methodology*Nao Otsuki, Masaru Sekido

62

1P-18

Effects of deposition conditions on the states of Pt nanoparticles on carbon
materials and their electrocatalytic properties toward methanol oxidation and
CO poisoning*Yuho Abe, Hironori Ogata

63vi

1P-19

Scattering parameter analysis of self-aligned flexible carbon nanotube thinfilm transistors*Saya Ishimaru, Taiga Kashima, Hiromichi Kataura, Yutaka Ohno

64

Graphene and 2D materials: Synthesis and growth
1P-20

One-dimensional growth of WS2 by chemical vapor deposition*Kazuma Shimogami, Misaki Kishibuchi, Hirotaka Inoue, Liu Zheng,
Yasumitsu Miyata, Yasuhiko Hayashi, Hiroo Suzuki

65Graphene and 2D materials: Transport property
1P-21

Gate-turning of carrier doping by oxygen molecule adsorption on MoS2
*Takumi Yoshida, Kazuyuki Takai

66

Graphene and 2D materials: Chemistry
1P-22

Correlation between the amount of functional groups in graphene oxide andthe catalytic activity in reduction of nitrobenzene*Riku Kondo, Yoshiaki Matsuo, Kazuyuki Takai

67

Graphene and 2D materials: Optical property
1P-23

Comparison of light emission from different kinds of hBNs after UV or
thermal treatments*Yusuke Adachi, Kuniharu Takei, Takayuki Arie, Seiji Akita

68

Graphene and 2D materials: Applications
1P-24

Vibrational Spectra of Nucleotides at the Au Cluster attached to graphene
nanopore in MD Simulation of a SERS Sensor*Mohd Aidil Amin Bin Mohd Nasir, Tatiana Zolotoukhina

69

1P-25

HER catalytic performance of Mo2C/C composite films prepared by
microwave-plasma CVD method*Shunsuke Numata, Hironori Ogata

70

Graphene and 2D materials: Others
1P-26

Magnetizations and De Haas-van Alphen oscillations in the Dirac fermions*Fenda Rizky Pratama, M. Shoufie Ukhtary, Riichiro Saito

71

Others: Synthesis and growth
1P-27

Synthesis of WTe2 nanowires by tellurization of tungsten oxide nanowires
and origin of non-formation of tubular structure*Mai Nagano, Yohei Yomogida, Hiromu Hamasaki, Kaori Hirahara,
Yasumitsu Miyata, Kazuhiro Yanagi

vii

72

Others: Electronic structure
1P-28

Electronic structures of MoS2 nanotube bundles*Kaoru Hisama, Mina Maruyama, Shohei Chiashi, Shigeo Maruyama,
Susumu Okada

15:30~15:45

Coffee break73

Fullerenes: Applications
15:45~16:15

Special lecture

1S-3

Low-dimensional C60 polymers: Fundamental properties and theirapplications to environment end energy issues*Jun Onoe

3

Fullerenes: Chemistry
16:15~16:30
1-6

One-step direct oxidation of alkoxy to ketone for evaporable fullerene-fused
ketone as efficient electron-transport materials*Hao-Sheng Lin, Yue Ma, Rong Xiang, Sergei Manzhos, Il Jeon, Shigeo
Maruyama, Yutaka Matsuo

20

Fullerenes: Electronic structure
16:30~16:45
1-7

Quantum States of the Endohedral Fullerene Crystal [Li+@C60]PF6*Hideo Ando, Yoshihide Nakao

21

Fullerenes: Optical property
16:45~17:00
1-8

Anionic fluorinated Zn-porphyrin combined with Li+C60 for long-lived
photoinduced charge separation with low energy loss
*Kazuhira Miwa, Shinobu Aoyagi, Takahiro Sasamori, Hiroshi Ueno,
Hiroshi Okada, Kei Ohkubo

22

Fullerenes: Applications
17:00~17:15
1-9

Formation of high-performance P-type thermoelectric materials composed offullerene molecules and molybdenum oxide nanoclusters*Masato Nakaya, Shinta Watanabe, Jun Onoe

17:15~17:30

Coffee break

viii

23

Graphene and 2D materials: Optical property
17:30~17:45

Invited lecture

1I-2

Strongly correlated electrons in a moiré superlattice probed with exciton
spectroscopy*Yuya Shimazaki, Ido Schwartz, Kenji Watanabe, Takashi Taniguchi, Martin
Kroner, Atac Imamoglu

9Graphene and 2D materials: Electronic structure
17:45~18:00
1-10

Energetics and electronic structure of corannulene-intercalated bilayergraphene*Mina Maruyama, Susumu Okada

18:00~18:15

Coffee break

18:15~19:45

Tutorial

1T-1*Yoshihiro Iwasa

ix

24

March 2 (Tue)Graphene and 2D materials: Synthesis and growth
09:00~09:30

Special lecture

2S-1

Synthesis, structure, processing and electronic devices using 2D layered
Noble Metal Dichalcogenides PdSe2 and PtS2
*Jamie Warner

4

Graphene and 2D materials: Optical property
09:30~09:45
2-1

Second harmonic generation in two-dimensional Janus TMDs
*Riichiro Saito, Nguyen Tuan Hung, M. Shoufie Ukhtary25

Graphene and 2D materials: Electronic structure
09:45~10:00
2-2

Geometric and electronic structures of a two-dimensional tetracoordinated C
allotrope of fused pentagons*Susumu Okada, Nguyen Thanh Cuong, Yanlin Gao, Mina Maruyama

10:00~10:10

Coffee break

10:10~10:15

NT21 Announcement

10:15~10:30

Invited lecture

2I-1

Improved properties, increased production, and the path to broad adoption ofcarbon nanotube fibers
Lauren W. Taylor, Oliver S. Dewey, Robert J. Headrick, Natsumi Komatsu,
Nicolas Marquez Peraca, Geoff Wehmeyer, Junichiro Kono, *Matteo
Pasquali

x

26

10

Carbon nanotubes: Transport property
10:30~10:45

Invited lecture

2I-2

Ultrahigh-Conductivity Carbon Nanotube Fibers with Giant ThermoelectricPower Factor
Natsumi Komatsu, Yota Ichinose, Oliver S. Dewey, Lauren W. Taylor,
Mitchell Trafford, Yohei Yomogida, Geoff Wehmeyer, Matteo Pasquali,
Kazuhiro Yanagi, *Junichiro Kono

11

Graphene and 2D materials: Transport property
10:45~11:00

Invited lecture

2I-3

Stacking-engineered ferroelectricity in bilayer boron nitride*Kenji Yasuda, Xirui Wang, Kenji Watanabe, Takahashi Taniguchi, Pablo
Jarillo-Herrero

11:00~11:15

Invited lecture

2I-4

Isospin Pomeranchuk effect in twisted bilayer graphene*Yu Saito

12

13

Carbon nanotubes: Others
11:15~11:30
2-3

In-situ TEM observation of laser induced carbon nanostructure growth*Ryosuke Senga, Yung-Chang Lin, Sapna Sinha, Takeshi Kaneko, Norihiro
Okoshi, Takeo Sasaki, Shigeyuki Morishita, Hidetaka Sawada, Kazu
Suenaga

11:30~12:15

Poster preview

12:15~13:30

Lunch

13:30~15:15

Poster session

27

Carbon nanotubes: Chemistry☆2P-1

Dispersion of single-walled carbon nanotubes with commodity plastics
PMMA*Ayaka Demise, Tsuyoshi Ando, Hiroharu Ajiro, Tsuyoshi Kawai, Yoshiyuki
Nonoguchi

xi

74

Carbon nanotubes: Applications☆2P-2

Cross-linking gelation of isomaltodextrin for the chromatographic separationof semiconducting carbon nanotubes*Yuki Matsunaga, Jun Hirotani, Yutaka Ohno, Haruka Omachi

75

Carbon nanotubes: Others☆2P-3

self-aligned hybrid quantum structure of diamond nitrogen-vacancy centerand carbon nanotube for electrical control of quantum states*Haruki Uchiyama, Shigeru Kishimoto, Junko Ishi-Hayase, Yutaka Ohno

76

Graphene and 2D materials: Synthesis and growth☆2P-4

Preparation of twisted bilayers by folding monolayer WS2*Masahiko Kaneda, Yusuke Nakanishi, Hong En Lim, Takahiko Endo,
Yasumitsu Miyata

77

Graphene and 2D materials: Electronic structure☆2P-5First-principles study of impurity states induced by a carbon or oxygen atom
in h-BN monolayer*Taishi Haga, Shuaishuai Yuan, Kirk H. Bevan, Susumu Saito

78

Graphene and 2D materials: Transport property☆2P-6

Air-Stable, Efficient Electron Doping of Monolayer MoS2 by Salt-Crown
Ether Treatment*Hiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, Yoshiyuki Nonoguchi,
Jiang Pu, Mari Ohfuchi, Toshifumi Irisawa, Hong En Lim, Kazuhiro Yanagi,
Takahiko Endo, Taishi Takenobu, Yasumitsu Miyata

79

☆2P-7

Detection of subband resonant tunneling in few-layer WSe2/h-BN/p+MoS2 van der Waals junction*Kei Takeyama, Rai Moriya, Shota Okazaki, Yijin Zhang, Satoru
Masubuchi, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki
Machida80

Graphene and 2D materials: Optical property☆2P-8

Optical induced Spin Current of Monolayer NbSe2*Ren Habara, Katsunori Wakabayashi

81

☆2P-9

Intra-layer exicitons trapped in moiré potential on monolayerMoSe2/NiPS3 heterostructure*Yan Zhang, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda

82

xii

Graphene and 2D materials: Applications☆2P-10Tuning Heat Flow Across Two-dimensional Layered van der Waals
Materials via Interfacial Mismatch and Coupling Engineering*Wenyu Yuan, Kan Ueji, Takashi Yagi, Takahiko Endo, Hong En Lim,
Yasumitsu Miyata, Yohei Yomogida, Kazuhiro Yanagi

83

Fullerenes: Chemistry
2P-11

Photoreaction of C70 with Disilirane: Electronic Properties of Silylated
Adducts*Shintaro Nishida, Masahiro Kako, Michio Yamada, Yutaka Maeda, Makoto
Furukawa, Takeshi Akasaka

84

Fullerenes: Optical property
2P-12

Simulation and measurement of the infrared emission spectra of C60*Tomonari Wakabayashi, Yutaka Mukai, Kaito Tanaka, Keisuke Fukumoto,
Miho Hatanaka, Takeshi Kodama

85

Carbon nanotubes: Synthesis and growth
2P-13

Growth of single-walled carbon nanotubes on SiO2/Si substrate and alumina
buffer layer by alcohol catalytic CVD method using Ir catalyst*Daiki Yamamoto, Shu Kondo, Kamal Sharma, Takahiro Saida, Shigeya
Narituka, Takahiro Maruyama

86

2P-14

Analysis of acetylene-induced growth acceleration of single-walled carbon
nanotubes by isotope labeling technique*Akari Kobayashi, Ryoya Ishimaru, Keigo Otsuka, Taiki Inoue, Shohei
Chiashi, Shigeo Maruyama

87

Carbon nanotubes: Transport property
2P-15

Fabrication and Efficiency Evaluation of Organic Photovoltaics using
Single-walled CNT of the Transparent Conductive Electrode*Riku Hatomoto, Hao-Sheng Lin, Takeshi Hashimoto, Satoru Hashimoto,
Yutaka Matsuo

88

2P-16

Thermoelectric properties of morphology-controlled single-walled carbon
nanotube alloys*Yota Ichinose, Rikuto Abe, Kan Ueji, Yohei Yomogida, Kazuhiro Yanagi

89

xiii

Carbon nanotubes: Optical property
2P-17

Gate-tuned high-harmonic generation in metallic single-walled carbon
nanotubes and graphene*Hiroyuki Nishidome, Kohei Nagai, Kento Uchida, Kenji Kawahara, Junko
Eda, Hitomi Okubo, Yohei Yomogida, Hiroki Ago, Koichiro Tanaka,
Kazuhiro Yanagi

90

2P-18

Circular dichroism spectra on thin films of Helicity Selected Single-wall
Carbon Nanotubes*Yuuya Hosokawa, Yohei Yomogida, Kazuhiro Yanagi

91

Carbon nanotubes: Applications
2P-19

Synthesis of Vertical-Aligned Carbon Nanotube / Al Composite Electrodefor Li-ion Capacitor Cathode*Masanori Hara, Ryo Kawachi, Takashi Banno, Masamichi Yoshimura

92

2P-20

Observation of the UV-induced Photocurrent in PET sheet using CNT thinfilm electrodes*Satoru Suzuki, Taichi Nakamura, Takahiro Ishikawa, Teruaki Konishi,
Tsuyoshi Hamano, Yutaka Ohno, Hiroshi Ajiki, Toshio Hirao, Satoshi Ishii

93

2P-21

Relationship between van der Waals force and tensile strength of
MWNT/polymer composites by Melt Blending*Koichi Utsugi, Masaru Skido

94

Graphene and 2D materials: Synthesis and growth
2P-22

Direct Growth of Graphene on GaN using Alcohol CVD*Shohei Yabuta, Shinichiro Mouri, Tsutomu Araki

95

Graphene and 2D materials: Electronic structure
2P-23

Elucidation of charge interactions between graphene and quantum dots
*Zen Inoue, Yasushi Ishiguro, Alexader Baranov, Igor Nabiev, Kazuyuki
Takai

96

Graphene and 2D materials: Transport property
2P-24

Transport Properties of two-dimensional n/p-doped Transition Metal
Dichalcogenides prepared through a post-doping method*Shaochun Zhang, Yuya Murai, Toshinori Shirafuji, Ryo Kitaura

97

Graphene and 2D materials: Optical property
2P-25

Optical properties of Zn-porphyrin covalently bounded to MoS2 and WS2.
*Ruben Canton Vitoria, Ryo Kitaura

xiv

98

Graphene and 2D materials: Applications
2P-26

Cationic Nitrogen Doped Graphene as p-type Dopant in PEDOT:PSS HoleTransporters for Organic Solar Cells*Takuhei Kaneko, Haosheng Lin, Sangwoo Chae, Takumi Yana, Nagahiro
Saito, Yutaka Matsuo

99

2P-27

Micro-patterning of graphite by Lithographic method*Jianwei Fu, Genki Hirobe, Yasushi Ishiguro, Kazuyuki Takai

100

Others: Optical property
2P-28

Phosphorescence excitation mapping of polyyne molecules isolated in solidacetonitrile at 20 K
*Kaito Tanaka, Aoi Mineyama, Riku Ohnishi, Keisuke Fukumoto, Tomonari
Wakabayashi

15:15~15:30

Coffee break

15:30~16:00

Award ceremony

101

Carbon nanotubes: Applications
16:00~16:30

Special lecture

2S-2

Organic synthetic approaches to nanocarbon-based hybrid materials*Haruka Omachi

5

Carbon nanotubes: Synthesis and growth
16:30~16:45

Invited lecture

2I-5

FC-CVD synthesis of CNTs from methane for transparent conductor
applications*Esko Kauppinen, Qiang Zhang, Datta Sukanta, Hua Jiang

14

Carbon nanotubes: Applications
16:45~17:00
2-4

Design and Fabrication of Carbon Nanotube-based Non-precious Metal
Electrocatalysts with High ORR and OER Performances and their
Applications
Pandian Ganesan, Aleksandar Staykov, Hiroaki Shu, Mitsugu Uejima,*Naotoshi Nakashimaxv

28

Carbon nanotubes: Chemistry
17:00~17:15
2-5

Multifaceted approaches to quantitative surface characterization of as-grown
and acid treated single-walled carbon nanotubes*Kazufumi Kobashi, Yoko Iizumi, Kazutoshi Hirota, Naoki Shinomori,Kazuhiro Shimamoto, Yasumasa Koga, Takahiro Morimoto, Toshiya
Okazaki29

Others: Synthesis and growth
17:15~17:30
2-6

Outstanding Performance of Single-digit Nanoparticle: 2.6nm DiamondParticle as the First Example*Eiji Osawa, Ryoko Yamanoi, Shuichi Sasaki, Amanda Barnard

30

Others: Chemistry
17:30~17:45
2-7

Solubilization and purification of carbon nanohorn aggregates using
cyclodextrins as surfactants*Hiroki Hanayama, Junya Yamada, Koji Harano, Eiichi Nakamura

31

2-8

Visualizing outer surface functionalization of carbon nanohorn sphericalaggregates by highly spatially resolved SEM-EDS*Hideaki Nakajima, Takahiro Morimoto, Kazufumi Kobashi, Minfang
Zhang, Ioanna Sideri, Nikos Tagmatarchis, Toshiya Okazaki

32

18:00~20:00

Banquet17:45~18:00

xvi

March 3 (Wed)Graphene and 2D materials: Synthesis and growth
09:00~09:30

Special lecture

3S-1

Boron-based new two-dimensional materials: synthesis, characterization,
and application*Takahiro Kondo

6

Self-assembly of metal-chalcogenide clusters into layered 2D materials*Yusuke Nakanishi, Naoyuki Kanda, Zheng Liu, Motoki Aizaki, Mina
Maruyama, Yanlin Gao, Susumu Okada, Yasumitsu Miyata

33

Transmissible plasma evolved graphene: production and application*Kamal Prasad Sharma, Aliza Khaniya Sharma, Daiki Yamamoto, Toru
Asaka, Takahiro Maruyama

34

09:30~09:45
3-1

09:45~10:00
3-2

Graphene and 2D materials: Others
10:00~10:15
3-3

Field-induced dynamics of Ne atom around graphene edges*Yanlin Gao, Susumu Okada

10:15~10:30

Coffee break

35

Carbon nanotubes: Applications
10:30~10:45
3-4

Foldable Perovskite Solar Cells Using Carbon Nanotube-Embedded
Ultrathin Polyimide Conductor*IL Jeon, Jungjin Yoon, Esko Kauppinen, Shigeo Maruyama, Philip Lee

xvii

36

10:45~11:00
3-5Highly Efficient Metal-Free Semi-Transparent Perovskite Solar Cells
enabled by MoO3-doped Transparent Carbon Nanotube Top Electrodes andFour-Terminal Perovskite Silicon Tandem Applications*Seungju Seo, Il Jeon, Kosuke Akino, Ahmed Shawky, Hao-Sheng Lin,
Hiroki Nagaya, Esko.I. Kauppinen, Rong Xiang, Yutaka Matsuo, Shigeo
Maruyama

37

Waveguide coupled cavity-enhanced light emission from individual carbon
nanotubes*Daiki Yamashita, Hidenori Machiya, Keigo Otsuka, Akihiro Ishii, Yuichiro
K. Kato39

11:00~11:15
3-6

Carbon nanotubes: Optical property
11:15~11:30
3-7

Analytical Estimation of Quantum Emitters Formed in Air-Suspended
Single-Walled Carbon Nanotubes*Daichi Kozawa, Xiaojian Wu, Akihiro Ishii, Jacob Fortner, Keigo Otsuka,
Rong Xiang, Taiki Inoue, Shigeo Maruyama, YuHuang Wang, Yuichiro K.
Kato

40

Carbon nanotubes: Others
11:30~11:45
3-8

Mechanical Vibration of Single-walled Carbon Nanotubes in a Water Using
Finite Element Model*Daisuke Miyashiro, Ryo Hamano, Hisao Taira, Kazuo Umemura

11:45~12:30

Poster preview

12:30~13:45

Lunch

13:45~15:30

Poster session

41

Fullerenes: Applications☆3P-1

Control of optical absorption property of PbPc donor film for developmentof full-spectra organic photovoltaic cells*Hayato Yoshizawa, Masahiro Kato, Masato Nakaya, Jun Onoe

xviii

102

Carbon nanotubes: Synthesis and growth☆3P-2

Enhanced gas-phase synthesis of single-wall carbon nanotubes with methaneas carbon source by preheating catalyst precursors*Zihao Zhang, Itsuki Chikaarashi, Katsuya Namiki, Toshio Osawa, Hisashi
Sugime, Suguru Noda

103

Carbon nanotubes: Chemistry☆3P-3

Semiconducting carbon nanotube extraction enabled by cellulosic polymer
wrapping*Tomoko Yagi, Tsuyoshi Kawai, Yoshiyuki Nonoguchi

104

Carbon nanotubes: Optical property☆3P-4

Investigation of water adsorption on vertically-aligned single-walled carbon
nanotubes by Raman spectroscopy*Masanori Bamba, Shu Sato, Taiki Inoue, Shigeo Maruyama, Shohei
Chiashi

105

Graphene and 2D materials: Synthesis and growth☆3P-5

Self-assembly of two-dimensional structures composed of tetrahedralmolybdenum clusters*Naoyuki Kanda, Zheng Liu, Motoki Aizaki, Mina Maruyama, Susumu
Okada, Yanlin Gao, Hisanori Shinohara, Yasumitu Miyata, Yusuke
Nakanishi

106

Graphene and 2D materials: Electronic structure☆3P-6

Theoretic Study on Raman Active Modes of SnS Thin Films*Itsuki Yonemori, Sudipta Dutta, Kosuke Nagashio, Katsunori Wakabayashi

107

☆3P-7

Tuning electronic properties of graphene antidot lattices with truncatedtriangular holes: A First-principles study*Yuta Taguchi, Susumu Saito

108

Graphene and 2D materials: Transport property☆3P-8

Two-dimensional electron gas in laterally-assembled WTe atomic wires*Hiroshi Shimizu, Jiang Pu, Zheng Liu, Hong En Lim, Yusuke Nakanishi,
Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata

109

Others: Synthesis and growth☆3P-9High-yield synthesis of MoS2 and MoSe2 nanotubes*Ryoga Tanaka, Yohei Yomogida, Yasumitsu Miyata, Kazuhiro Yanagi

xix

110

Fullerenes: Applications
3P-10

Preparation of bipyramidal gold nanoparticle-[C 60]fullerene nanowhisker
composites and kinetics study for reduction of 4-nitrophenol*Jeong Won Ko, Yeon A Son, Se Hwan Park, Weon Bae Ko

111

Carbon nanotubes: Synthesis and growth
3P-11

Growth of single-walled carbon nanotubes using Ir catalyst prepared by dipcoating process*Shu Kondo, Ai Misaki, Kamal Sharma, Takahiro Saida, Shigeya Naritsuka,
Takahiro Maruyama

112

3P-12

Growth of hBN on CNT assemblies and their memristive behavior*Misaki Kishibuchi, Kazuma Shimogami, Hirotaka Inoue, Kyohei Nasu,
Tomohiro Nakagawa, Mitsuaki Maetani, Yuichiro Tanaka, YasuhikoHayashi, Hiroo Suzuki

113

3P-13

Synthesis of high-density vertically aligned carbon nanotubes by suppressing
migration of Fe using Fe/MoxOy catalyst*Mitsuaki Maetani, Hirotaka Inoue, Tomohiro Nakagawa, Kyohei Nasu,
Takeshi Nishikawa, Hiroo Suzuki, Yasuhiko Hayashi

114

Carbon nanotubes: Chemistry
3P-14

Electrolyte effects on electrochemical doping of semiconducting carbon
nanotube films*Satoki Taniguchi, Tsuyoshi Kawai, Yoshiyuki Nonoguchi

115

Carbon nanotubes: Transport property
3P-15

Visualization of thermal transports on bundled carbon nanotubes bymonitoring phase transition of tin nanoparticles*Hiromu Hamasaki, Takumi Kawase, Kaori Hirahara

116

Carbon nanotubes: Optical property
3P-16

Excitonic photoluminescence properties of locally functionalized singlewalled carbon nanotubes using cycloaddition modification*Tomohiro Shiraki, Keita Hayashi, Tsuyohiko Fujigaya

117

Carbon nanotubes: Applications
3P-17

Reflection and Absorption Properties of Microwave Absorbers Made by
SWNT-Cellulose Composite Paper*Weni Yulistia, Tetsu Mieno

118

3P-18

Preparation of carbon nanotube/organic-inorganic hybrid aerogel composites*Taiyo Shimizu, Takeo Yamada, Kenji Hata

119

xx

3P-19CNT/HfO2/CNT memristor with high on-off ratio for neuromorphic
computing*Adha Sukma Aji, Yutaka Ohno

120

Graphene and 2D materials: Synthesis and growth
3P-20

Synthesis and properties of carbon quantum dots using woody biomass.
*Takaki Yoda, Hironori Ogata

121

Graphene and 2D materials: Chemistry
3P-21

Effect of Defect Formation of Graphene on Proton Penetration Properties*Tomohiro Fukushima, Takaha Komai, Kei Murakoshi

122

Others: Electronic structure
3P-22

Electronic properties of 1D transition-metal chalcogenides nanowires*Nguyen Tuan Hung, Riichiro Saito

123

Graphene and 2D materials: Optical property
3P-23

Effect of iron ion beam irradiation on MoS2 fluorescence*Takumi Hidaka, Tomoaki Nishimura, Kazuyuki Takai

124

3P-24

Building of Platforms to Explore Transport Dynamics of Excitons andTrions in Monolayer Transition Metal Dichalcogenides*Mengsong Xue, Yuya Murai, Shaochun Zhang, Toshinori Shirafuji, Ryo
Kitaura125

Graphene and 2D materials: Applications
3P-25

Spin current induced by edge plasmon on two-dimensional materials*Yuan Tian, M. Shoufie Ukhtary, Riichiro Saito

126

Others: Optical property
3P-26

Molecular orbital calculations of small carbon molecules in the singlet andtriplet states*Keisuke Fukumoto, Riku Ohnishi, Kaito Tanaka, Tomonari Wakabayashi

127

3P-27

Effects of liquid phase oxidation of Nanodiamond surface on its water
dispersibility and photo-absorption*Takuma Tsuji, Kazuyuki Takai

128

3P-28

Do Elementary Diamond Nanoparticles Aggregate in their Aqueous
Colloidal Solutions by just Diluting with Pure Water?
*Masaya Nemoto, Shusuke Ando, Yuho Itabashi, Tomohito Obata, Daiki
Ayai, Nagito Haga, Kaito Hiruta, Toshihiko Tanaka, Yasuhiro F. Miura,
Tetsuya Aoyama, Kazunori Miyamoto, Atsuya Muranaka, Masanobu
Uchiyama, Eiji Osawa

129

Others: Othersxxi

15:30~15:45

Coffee break

Carbon nanotubes: Applications
15:45~16:15

Special lecture

3S-2

Characterization methods for the ensemble state of network structured
nanomaterials*Takahiro Morimoto

7

Graphene and 2D materials: Applications
16:15~16:30
3-9

Co-self-assembly of probe and scaffold peptides on graphite surface towardfunctionalization of graphene biosensors*Chishu Homma, Mirano Tsukiiwa, Yuhei Hayamizu

42

Investigation of Schottky contact for transparent solar cell with monolayer
WS2*Xing He, Toshiro Kaneko, Toshiaki Kato

43

16:30~16:45
3-10

Graphene and 2D materials: Electronic structure
16:45~17:00
3-11

Fabrication of Graphene/h-BN/graphene stacked mechanical resonator*Kazuki Yasoshima, Taichi Inoue, Kuniharu Takei, Takayuki Arie, Seiji
Akita

44

Graphene and 2D materials: Transport property
17:00~17:15
3-12

p–n junction in graphene nanoribbon modified by periodically doped boron
and nitrogen atoms*Sake Wang, Md Shafiqul Islam, Nguyen T. Hung, Hongyu Tian, Ahmad R.
T. Nugraha, Riichiro Saito

17:15~17:25

Closing

xxii

45



     








  
  
  

1S-1
Growth and Application of Carbon nanotubes, Graphene, andGraphene Nanoribbons
żShintaro Sato1,2
1

Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan
2
Fujitsu Limited, Atsugi 243-0197, Japan

We work on growth of carbon nanotubes (CNTs), graphene, and graphene nanoribbons(GNRs), and their application to electronic devices, such as transistors, interconnects, andsensors. We explain some of our recent results here.
As for CNTs, we have been working on application of CNTs to interconnects [1, 2], andthermal interface materials (TIMs) [3]. In particular, we fabricated TIMs consisting of bundles
of vertically aligned CNTs, where the density of CNTs was increased by a newly-developed
compressing method [3]. The thermal resistance of the CNT-TIM was found to be as low asthat of indium film [3]. Recently, we developed a flexible and adhesive CNT sheet consistingof bundles of vertically aligned CNTs and two laminate layers at both the ends of the CNTs, as
shown in Fig. 1 [4]. The developed technology protects the carbon nanotubes themselves witha laminate layer, making them stable in shape and making cutting and handling easier.
We also work on bottom-up growth of armchair-edged graphene nanoribbons (AGNRs). The
bandgap of AGNR can be controlled by its width; however, only AGNRs with bandgaps well
above 1 eV have been reported so far. Recently, we have succeeded in growing AGNRs with
17 carbon-dimer lines (17-AGNRs) by polymerization and subsequent cyclodehydrogenationof precursor molecules on Au(111), as shown in Fig. 2 [5]. We found that, by scanning tunnelingspectroscopy, 17-AGNRs have a bandgap of 0.2 eV on Au(111), which corresponds to a
bandgap of 0.63 eV without the image charge effects of Au. This bandgap is about the same asthat of Ge, and may be suitable for transistor applications.
This research was partly supported by JST CREST Grant Number JPMJCR15F1, Japan.
[1] M. Nihei, et al., Jpn. J. Appl. Phys. 44 1626 (2005) [2] Y. Awano, et al., Proc. IEEE 98, 2015 (2010) [3] D.
Kondo, et al. 2017 International Conference on Solid State Devices and Materials (SSDM), p.353 (2017) [4]
https://pr.fujitsu.com/jp/news/2020/04/17.html [5] J. Yamaguchi, et al., Commun. Mater. 1, 36 (2020).
Corresponding Author: S. Sato, Tel: +81-46-250-8832, Fax: +81-46-250-8235, E-mail: sato.shintaro@fujitsu.com

Fig. 2 (a) Scanning tunneling microscope
image and (b) non-contact atomic force
microscope image of 17-AGNR.

Fig. 1 Flexible and adhesive CNT sheet.

-1-

1S-2
14-cm-long carbon nanotube forest via in situ supplements of iron andaluminum vapor sources○Hisashi Sugime1*, Toshihiro Sato2, Rei Nakagawa2, Tatsuhiro Hayashi3, Yoku Inoue3,
Suguru Noda1,2
1

Waseda Research Institute for Science and Engineering, Waseda University
2
Department of Applied Chemistry, Waseda University
3
Department of Electronics and Materials Science, Shizuoka University

Growth of carbon nanotube (CNT) forests in large scale is one of the main challenges toutilize the attractive properties of CNTs in variety of applications. To date, several groups havereported the growth of centimeter-scale CNT forests, and the maximum length that has beenreached is ~2 cm using an iron-gadolinium (Fe-Gd) catalyst on an aluminum oxide (Al2O3)
support [1]. Nevertheless, with the conventional approaches, there seemed to exist a ceilingpreventing growth that went beyond ~2 cm. Therefore, it is necessary to realize a method that
achieves longer CNT forests while alleviating the growth termination which is mainly causedby the structural change of the catalyst nanoparticles [2].
In this work, a carbon nanotube forest with a length of 14 cm grew with an average growthrate of 1.5 μm s−1 and a growth lifetime of 26 h (Fig. 1) [3]. Several key factors to realize thisunprecedented long growth such as catalyst conditions, growth conditions in chemical vapor
deposition, and reactor system were clarified. It was found that the combination of the catalyst
system of iron/gadolinium/aluminum oxide (Fe/Gd/Al2Ox) [4] and the in situ supplements ofFe and Al vapor sources at very low concentration was crucially important. A cold-gas system,
where only the substrate is heated while keeping the gas at room temperature, was employed tosuppress unnecessary reactions and depositions [5]. The long carbon nanotube forest enabledmacroscopic measurements of the tensile and electrical properties of the carbon nanotube wires,and it gave several important insights for industrial applications of the carbon nanotubes in the
future.
[1] W. Cho et al., Carbon 69, 609(2014). [2] H. Sugime et al., ACS
Appl. Mater. Interfaces 6, 15440(2014). [3] H. Sugime et al., Carbon
172, 772 (2021). [4] H. Sugime et al.,ACS Nano 13, 13208 (2019). [5] H.
Sugime et al., Carbon 50, 2953
(2012).
Corresponding Author: H. Sugime,
E-mail: sugime@aoni.waseda.jp

Fig. 1: (a) Pictures of the CNT forest after the growth for 32 h. (b)Growth curves of the CNT forests with and without Fe/Al vapor
sources.

-2-



1S-3

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Synthesis, structure, processing and electronic devices using 2D layered
Noble Metal Dichalcogenides PdSe2 and PtS2
Jamie Warner 1,2
1

2

Texas Materials Institute, The University of Texas at Austin, Austin, TX, US.
Departure of Mechanical Engineering, The University of Texas at Austin, Austin, TX, US.

2D materials have expanded well beyond graphene and the pursuit of new properties in stablemonolayers is driving extensive research into various systems, primarily those that use
metal-chalcogen bonding. Noble Metal Dichalcogenides (NMDs) are produced using Pt or Pd
along with S, Se or Te atoms to form a new class of 2D layered materials with properties
ranging from metallic to semi-metal and small band gap semiconductors [1]. The uniquepentagonal crystal structure of PdSe2, along with its rich Pd:Se phase diagram, makes it aninteresting system to study defects and phase transformations into Pd2Se3 [2-4]. I will discuss
our recent ways to synthesis Pd and Pt based NMDs using solution precursors and theresultant crystal structures that are grown directly on graphene and MoS2 monolayers [3]. The
understanding of the atomic structure will be given using annular dark field scanningtransmission electron microscopy, with in-situ heating to drive phase transformations [4,6]. I
will discuss how to directly process PdSe2 thin films using focused laser irradiation, and theintegration into nanoscale electronic devices [5]. The lateral and vertical epitaxy with other
2D transition metal dichalcogenides (TMDs), MoS2 and WS2, will be discussed (figure 1),along with device properties.
Figure 1. ADF-STEM image of the lateralinterface of Pd2Se3 with MoS2

[1] E. Chen, W. Xu, J. Chen, 2D Layered Noble Metal Dichalcogenides (Pt, Pd, Se, S) for Electronics andEnergy Applications, Materials Today Advances, 7, 100076, (2020)[2] J. Chen, G. Ryu, S. Sapna, J. H. Warner, Atomic Structure and Dynamics of Defects and Grain Boundaries in
2D Pd2Se3 Monolayers, ACS Nano, 13, 8256-8264, (2019)[3] K. L. Tai, et al., Phase Variations and Layer Epitaxy of 2D PdSe 2 Grown on 2D Monolayers by Direct
Selenization of Molecular Pd Precursors, ACS Nano, 14, 11677-11690, (2020)[4] G. H. Ryu, et al., Striated 2D Lattice with Sub-nm Etch Channels by Controlled Thermally Induced Phase
Transformations of PdSe2, Advanced Materials, 31, 1904251, (2019)[5] V. Shautsova, et al., Direct Laser Patterning and Phase Transformation of 2D PdSe2 Films for On Demand
Device Fabrication, ACS Nano, 13, 14162-14171, (2019)[6] G. H. Ryu, et al., Thermally Driven Phase Transition of 2D Few-Layered 1T PtSe2 into Ultrathin 2D
Non-Layered PtSe Crystals, Chemistry of Materials, 31, 9895-9903, (2019)
Corresponding Author: J. Warner
E-mail: Jamie.warner@austin.utexas.edu

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2S-2
Organic synthetic approaches to nanocarbon-based hybrid materials○Haruka Omachi1,21Research Center for Materials Science, Nagoya University, Nagoya 464-8602, Japan
Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya,464-8602, Japan.

2

Owing to their high specific surface area, excellent electrical and mechanical properties,
nanocarbon materials such as carbon nanotubes and graphene are widely utilized as theplatforms of the hybrid materials for the electronic devices, rechargeable batteries andelectrochemical catalysis. Although physical adsorption is commonly used as the simplest
immobilization method to prepare hybrid materials, it is not suitable for the well-defied
structural control and achieving long-term stability.
In this presentation, I will talk about the synthesis and fabrication of the nanocarbon-based
hybrid materials by using approaches based on organic chemistry: (i) dehalogenative
one-dimensional polymerization inside carbon nanotubes [1–3]: (ii) fabrication of carbon
nanotube thin films for flexible transistor applications using a cross-linked amine polymer [4]:(iii) direct sulfur-functionalization of graphene oxide and immobilization of molecularclusters and battery applications [5].

[1] Nakanishi, Y.; Omachi, H.; Fokina, N. A.; Schreiner, P. R.; Kitaura, R.; Dahl, J. E. P.; Carlson, R. M. K.;
Shinohara. H. Angew. Chem., Int. Ed. 2015, 54, 10802.
[2] Kinno, Y.; Omachi, H.; Nakanishi, Y.; Shinohara, H. Chem. Lett., 2018, 47, 1022.
[3] Kinno, Y.; Omachi, H.: Shinohara, H. Appl. Phys. Express, 2020, 13, 015002.
[4] Matsumoto, K.; Ueno, K.; Hirotani, J.; Ohno, Y.; Omachi, H. Chem. Eur. J., 2020, 26, 6118.
[5] Omachi, H.; Inoue, T.; Hatao, S.; Shinohara. H.; Criado, A.; Yoshikawa, H.; Syrgiannis, Z.; Prato, M. Angew.
Chem., Int. Ed. 2020, 59, 7836.
Corresponding Author: H. Omachi
Tel: +81-52-789-3660
Web: https://sites.google.com/view/haruka-omachi/
E-mail: omachi@chem.nagoya-u.ac.jp

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Strongly correlated electrons in a moiré superlatticeprobed with exciton spectroscopy○Yuya Shimazaki1, Ido Schwartz1, Kenji Watanabe2, Takashi Taniguchi2, Martin Kroner1,
Atac Imamoglu1
1Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich 8093, Switzerland
2
National Institute for Materials Science, Ibaraki 305-0044, Japan

2D material moiré heterostructure constitute a novel platform to study many body physics
of electrons and excitons. Transport study of twisted bilayer graphene revealed rich exotic
phase of electrons including from Mott insulator state to superconductivity. On the other hand,
optical spectroscopy study revealed the effect of moiré lattice potential on excitons intransition metal dichalcogenide (TMD) heterostructure, but the correlated phase of electrons
has been elusive.
In this talk, I will present optical spectroscopy study of homo bilayer TMD moiré
heterostructure, and report the observation of strongly correlated incompressible electronic
state [1]. We utilized a boron nitride (hBN) encapsulated MoSe2 / hBN (1L) / MoSe2
heterostructure with top and bottom gates, which enable independent control of the chemical
potential and the electric field. Tightly bound excitons in TMD interact with Fermi sea
carriers by forming exciton-polaron, and we utilized the energy shift of exciton-polaron
resonance to detect layer resolved charge configuration by optical means. In low electron
density regime, we found periodic chemical potential dependence of carrier filling behavior
indicating existence of moiré subband structure (Fig. 1). By analyzing interlayer chargetransfer behavior between top and bottom MoSe2 while tuning electric field, we figured out
abrupt interlayer charge transfer happens at specific filling around 1 electron / moiré unit cell,
evidencing the emergence of strongly correlated incompressible electronic state. In thisincompressible state, we also observe emergence of new excitonic resonances from umklapp
scattering, which is evidencing the emergenceof charge order [2].
This highly tunable twisted MoSe2 homo
bilayer system separated by a monolayer hBN
barrier with weak moiré potential, provides a
promising platform for investigating strongly
correlated Mott-Wigner physics.
[1] Y. Shimazaki et al. Nature, 580, 472 (2020).
[2] Y. Shimazaki et al. arXiv:2008.04156 (2020).
Corresponding Author: Y. Shimazaki
Tel: +41-44-633-09-51,
E-mail: yuyas@phys.ethz.ch

Fig. 1 Layer resolved periodic charge filling
behavior
sensing.

-9-

revealed

byexcitonic

charge




2I-1




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2I-3
Stacking-engineered ferroelectricity in bilayer boron nitride○Kenji Yasuda1, Xirui Wang1, Kenji Watanabe2, Takashi Taniguchi2, Pablo Jarillo-Herrero1
1

Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139,
USA.
2
National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.

Recent advances in van der Waals (vdW) assembly enabled the engineering ofheterostructures with physical properties beyond the sum of those of the individual layers. Oneof the most representative examples is small-angle twisted bilayer graphene, whose flat bandleads to a variety of emergent phenomena such as superconductivity and magnetism. In thistalk, I will demonstrate that the vdW stacking can modify not only the electronic band structure
but also the crystal symmetry, thereby enabling the design of ferroelectric materials out of nonferroelectric parent compounds.
Figure 1a shows the crystal structure of bulk hexagonal boron nitride (BN). The adjacentlayer is rotated by 180° (AA’ stacking), and therefore, the bulk crystal is centrosymmetric.
However, the crystal becomes ferroelectric when two BN sheets are stacked without rotation.
The parallel-stacked BN takes the form of AB or BA stacking, which exhibits opposite out-ofplane electric polarization that reverses depending on the stacking order (Fig. 1b and c) [1]. We
fabricate the parallel-stacked bilayer BN by “tear-and-stack” procedure and prove thepolarization using piezoelectric force microscope and adjacently-stacked graphene sheet [2].
We observe a prominent hysteresis in the resistance of graphene, associated with theferroelectric switching of parallel-stacked BN (Fig. 1d). The interfacial ferroelectricity persists
to room temperature while keeping the high mobility of graphene. The ferroelectric polarizationis stable for at least a month, paving the way for potential ultrathin nonvolatile memory
applications [2-4].

Fig. 1 a, Bulk form of hexagonal boron nitride, AA’ stacking. b and c, Parallel-stacked boron nitride with AB andBA stacking. d, Resistance of graphene adjacent to the parallel-stacked boron nitride. The red and blue curves areforward and backward scan, respectively. The device schematics is illustrated in the inset.

[1] L. Li, M. Wu ACS Nano. 11, 6382–6388 (2017).
[2] K. Yasuda et al. arXiv:2010.06600[3] M. V. Stern et al. arXiv:2010.05182[4] C. R. Woods et al. arXiv:2010.06914
Corresponding Author: K. Yasuda
Tel: +1-617-460-1382
E-mail: yasuda@mit.edu- 12 -

2I-4
Isospin Pomeranchuk effect in twisted bilayer graphene○Yu Saito1
1

California NanoSystems Institute, University of California at Santa Barbara, CA 93106 USA

In bilayer graphene rotationally faulted to 1.1 degrees, interlayer tunneling and rotational
misalignment conspire to create a pair of low energy flat bands causing strongly correlated
phenomena such as correlated insulating states [1], superconductivity [2], and ferromagnetism[3]. An emerging question in twisted bilayer graphene is the role and nature of isospin
ferromagnetism [4,5]. In this talk, I will describe experiments probing the finite temperaturephase diagram of isospin symmetry breaking in high quality twisted bilayer graphene usingtransport and thermodynamic measurements [6]. We find that low temperature transport at
superlattice filling factor nu=-1 shows no sign of a commensurate correlated phase, but aresistivity peak appears at a high temperature that resembles behavior observed nearcommensurate where the low temperature phase is a correlated insulator. Tilted fieldmagnetotransport and direct measurements of the in-plane magnetic moment show that theresistivity peak near nu = -1 is adiabatically connected to a metamagnetic phase transition atwhich the system develops finite isospin polarization. These data are suggestive of a
Pomeranchuk-type mechanism, in which the entropy of disordered isospin moments in the
ferromagnetic phase stabilizes it relative to the unpolarized Fermi liquid phase at elevatedtemperatures. Direct thermodynamic measurements of the entropy, S indeed find it to be large,
S ~ 1k_B per moiré unit cell, for nu ~ ± 1, and we find that a fraction of S is suppressed by anin-plane magnetic field consistent with an isospin contribution. In contrast to Helium-3, no
discontinuities are observed in the thermodynamic quantities across this transition, implyingthat the magnetic transitions are continuous in nature. Our findings imply a small isospin
stiffness, with implications for the nature of finite temperature transport as well as themechanisms underlying isospin ordering and superconductivity in twisted bilayer graphene andrelated systems.
[1] Cao et al. Nature 556, 80 (2018)[2] Cao et al. Nature 556, 43 (2018), Yankowitz et al. Science 363, 1059 (2019).
Lu et al. Nature 574, 653 (2019). Saito et al. Nature Physics 16, 926 (2020)[3] Shape et al. Science 165, 605 (2019), Serlin et al. Science 367, 900 (2020)[4] Zondier et al. Nature 582, 203 (2020)[5] Saito et al. Nature Physics (2021)[6] Saito et al. Nature, in press
Corresponding Author: Yu Saito
Tel: +1-805-202-9115
E-mail: yusaito@ucsb.edu- 13 -

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- 14 -

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1-1
Correlation between the thermal and mechanical properties of the hightemperature thermal- treated carbon nanotube yarns○Ryo Shikata1, Yuho Shigeeda2, Hirotaka Inoue2, Hiroo Suzuki2, Wataru Yajima1, Tomohiro
Nakagawa2, Takeshi Nishikawa2, Yoshifumi Yamashita2, Yasuhiko Hayashi2, Masaki Hada3
1

College Engineering Sciences, Tsukuba University, Tsukuba 305-8573, Japan
Graduate School of Natural Science and Technology, Okayama University,
Okayama 700-8530, Japan
3
Tsukuba Research Center for Energy Material Science (TREMS), Tsukuba University,
Tsukuba 305-8573, Japan
2

250
200
150
100
50
0
1600 1800 2000 2200 2400 2600 2800

Temperature [K]  Fig. 1 Thermal conductivity of CNT yarns as a functionof annealing temperature      

Effective tensile strength [GPa]Thermal conductivity [W/m࣭K]

A carbon nanotube (CNT) exhibits extremely high thermal transport and physical properties.
However, the properties of assembled CNTs, e.g., CNT yarns, are significantly lower than thoseof a CNT due to the interfacial structure between the CNTs. In general, amorphous carbon (aC) between the CNTs in dry-spun CNT yarns causes a decrease in the properties of CNT yarns.
Thus, one of the key strategies to enhance the properties of assembled CNTs is to remove theinterfacial a-C or to convert a-C into graphene by annealing. In our previous study, we havefound that annealing can induce graphene from a-C in the interface between CNTs in CNT yarn
[1,2]. The graphene formation can improve interaction at the interface between CNTs, which
enhances the thermal conductivity of the CNT yarn. Due to the improvement of interfacialinteraction, it also suggests that the mechanical strength of CNT yarns would be enhanced byannealing. In this study, we investigated the mechanical strength of CNT yarns after annealing
at various temperatures. Figures 1 and 2 show the thermal conductivity and effective tensile
strength of CNT yarns as a function of annealing temperature, respectively. The effective tensile
strength is recalculated from the tensile strength using the effective cross-section of the CNTyarns. Both the properties linearly increase above the annealing temperature of ~2000 K. The
result suggests that the thermal transport and physical properties of assembled CNTs are
simultaneously enhanced by the high-temperature annealing via the graphene formation andimprovement of the interfacial interaction between the CNTs.
4

3.5

3

2.5
0
1600 1800 2000 2200 2400 2600 2800

Temperature [K]Fig. 2 Effective tensile strength of CNT yarns as afunction of annealing temperature[1] M. Hada et al., ACS. Appl. Energy Mater. 2, 7700 (2019).
[2] M. Hada et al., Carbon 170, 165 (2020).
Corresponding Authors: M. Hada, Y. Hayashi
Tel: +81-29-853-5289, +81-86-251-8230
E-mail: hada.masaki.fm@u.tsukuba.ac.jp, hayashi.yasuhiko@okayama-u.ac.jp- 15 -

1-2








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- 16 -

1-3
Fabrication and characterization of oriented carbon nanotube/polymer composite films
for high thermal conductivity○

Nikita Kumari, Maireyee Bhattacharya, Ryo Abe, Naofumi Okamoto, Manish Pandey, Masakazu
Nakamura
Division of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma,
Nara 630-0192, Japan

Carbon nanotubes (CNTs) possessing unique chemical structure and uni-dimensionality,
have been witnessing huge significant scientific research and development. Their exceptional
mechanical, thermal, and electrical properties have qualified them for fabricating efficient,
lightweight, portable, and flexible electronics [1]. Theoretical and simulation results predicted
CNTs to have very high phonon-dominated thermal conductivity of thousands of W.m-1.K-1 [2].
However, so far reported thermal conductivity lags far behind from those values which is
generally attributed to the difficulties in fabrication of ideally oriented CNT networks in
CNT/polymer composite films, which is an essential requirement for planer heat transport inprospective vertically integrated flexible and wearable electronics. Thereby, facile techniques
for orientated film fabrication are highly desirable to fully harness the inherent anisotropic
properties of single CNTs for practical applications.
A new technique, for fabricating ribbon-shaped oriented CNT/polymer composite films
using a programable robotic dispenser, has been recently reported by our group [3]. It ishypothesized that, due to shear stress at the needle’s inner wall, the CNTs get aligned parallel
to it when the dispersion of CNT/polymer composite is dispensed. In the present work, theeffect of various parameters on the CNT orientation was studied and optimized by fabricating
the films under varying conditions and comparing the corresponding polarized-Raman spectra.
Consequently, around four-fold enhancement in average CNT orientation (in terms of G-band
ratio) in the film was achieved compared to the reference sample. Which further resulted inalmost two times enhancement in the thermal diffusivity. The details of film fabrication with
optimum CNT alignment by controlling the casting parameters where the streamlinedorientation is preserved and their various characterization results will be discussed during thepresentation.
This work was supported by JST CREST Grant Number JPMJCR18I3, Japan.
[1] Z. Han, Alberto Fina, Prog. Polym. Sci. 36, 914 (2011).
[2] T. Ji et al. Composites: Part A 91, 351 (2016).
[3] Pandey et al. Appl. Phys. Express 13, 065503 (2020).
Corresponding Author: M. Nakamura
Tel:+81-743-72-6031; Fax:+81-743-72-6047; E-mail:mnakamura@ms.naist.jp- 17 -

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1-5




Formation of Ultra-slender CNTs via Field Emission Dischargeof CNT films
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Toyota Physical and Chemical Research Institute, Nagakute-city 480-1192, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
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- 20 -

1-7
Quantum States of the Endohedral Fullerene Crystal [Li+@C60]PF6○Hideo Ando1, Yoshihide Nakao2
1

2

Faculty of Science, Yamagata University, Yamagata 990-8560, Japan
Faculty of Life Science, Kyushu Sangyo University, Fukuoka 813-8503, Japan

Endohedral fullerene Li+@C60 is an ideal porous system for studying the quantized nuclear
motion of Li+ under (sub)nanoscale confinement. Using Li+@C60 crystallized together withvarious anions and solvents, Aoyagi et al. have clarified that the anions and solvents around theC60 cage exterior can substantially affect the distribution of Li+ [1, 2]. Zhang et al. havetheoretically revealed that an extremely small cage distortion (~10-3 Å) may completely alter
the Li+ wave function [3]. Although recent papers have pointed out the importance of theelectronic polarization of the C60 cage induced by the nearby ions [4, 5], it has yet to be clarified
what intermolecular interactions (de)localize and (de)stabilize the Li+ wave function of interest.
Focusing on the [Li+@C60]PF6- crystal, we developed amodel potential energy function that fits a highly-accurate
post-Hartree-Fock energy surface for the Li+ motion. Using
the Fourier grid Hamiltonian method, we calculated 803
lowest energy wave functions of Li+. The ground state isnearly two-fold degenerate, and its wave functions aremostly localized under two C6 rings (Fig. 1), near thedisorder sites of Li+ in the X-ray crystal structure [2]. The
wave functions are slightly delocalized under six C6 rings,
each of which is contacted by a negatively charged F atom.
We decomposed the potential energy function into fourintermolecular interaction energy functions: the quasiclassical electrostatic, exchange repulsion, polarization,of a ground-state wave
and dispersion ones. These functions helped clarify that the Fig. 1 Isosurfaces++
shell-shaped adsorbent potential in the cage interior is function of Li in [Li @C60]6PF6 model.
formed chiefly by the exchange repulsion and the polarization
i attraction,ibboth
h off whichhi h arestrongly dependent on the cage distortion. The relative stabilities among the potential wells
underneath the individual ring centers are primarily determined by the exchange repulsion andthe electrostatic interaction. Moreover, it turns out that the ground-state wave functions of Li+
gain substantial polarization stabilization (-21.36 kcal/mol) and somewhat electrostatic anddispersion stabilization (-0.49, -0.71 kcal/mol) due to their off-centering in the cage. Beyond
the common picture of Li+ moving in a classical electrostatic field, our approach can deepen
the understanding of the Li+ wave function confined in various polarizable nanopores.
[1] S. Aoyagi et al. Nat. Chem., 2, 678 (2010).
[2] S. Aoyagi et al. J. Phys. Soc. Jpn., 85, 094605 (2016).
[3] M. Zhang et al. J. Phys. Chem. A, 112, 5478 (2008).
[4] G. Raggi, A. J. Stace and E. Bichoutskaia, Phys. Chem. Chem. Phys., 16, 23869 (2014).
[5] V. V. Chaban and E. E. Fileti, Phys. Chem. Chem. Phys., 17, 15739 (2015).
Corresponding Author: H. Ando
Tel: +81-23-628-4564, Fax: +81-23-628-4567,
E-mail: ando@sci.kj.yamagata-u.ac.jp- 21 -

1-8
Anionic fluorinated Zn-porphyrin combined with Li+@C60 for long-lived
photoinduced charge separation with low energy loss
○Kazuhira Miwa1, Shinobu Aoyagi1, Takahiro Sasamori2, Hiroshi Ueno3,4,
Hiroshi Okada5,6,7, Kei Ohkubo8
1

Department of Information and Basic Science, Nagoya City University, Nagoya, 467-8501, Japan
Division of Chemistry, Faculty of Pure and Applied Sciences, and Tsukuba Research Center for
Energy Materials Sciences (TREMS), University of Tsukuba, Tsukuba, 305-8571, Japan
3
Frontier Research Institute for Interdisciplinary Sciences, Creative Interdisciplinary Research.
Division, Tohoku University, Sendai, 980-8578, Japan
4
Department of Chemistry, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
5
Fukamatsugumi Co., Ltd. Sendai, 981-0931, Japan
6
Idea International Co., Ltd. Sendai, 981-0922, Japan
7
Center for Fundamental and Applied Research of Novel Nanocarbon Derivatives, Center for Key
Interdisciplinary Research, Tohoku University, Sendai, 980-8578, Japan
8
Institute for Advanced Co-Creation Studies, Open and Transdisciplinary Research Initiatives, Osaka
University, Suita, 565-0871, Japan2

A donor-acceptor supramolecular complex consisting of a cationic lithium endohedral[60]fullerene (Li+@C60) and an anionic meso-tetrakis(sulfonatophenyl) zinc porphyrin(ZnTPPS4−) generates a long-lived photoinduced charge-separated (CS) state with a lifetime of
0.30 ms in benzonitrile at 300 K.[1] To reduce the energy loss associated with relaxation fromthe lowest singlet excited state to the CS state, we designed and synthesized an anionic mesotetrakis(4-carboxymethylthio-2,3,5,6-tetrafluorophenyl) zinc porphyrin (ZnTF4PPTC4−) toform a supramolecular complex with higher oxidation potential. The energy level of the CS
state of the supramolecular ZnTF4PPTC4−/Li+@C60 complex determined by electrochemicalmeasurements is at 0.94 eV, which is much higher than that of a supramolecular complex using
ZnTPPS4− at 0.55 eV. Time-resolved transient absorption spectroscopy demonstrates thatZnTF4PPTC4−/Li+@C60 generates a long-lived CS state with a lifetime of 0.29 ms in a binary
solvent of acetonitrile and chlorobenzene.

[1] K, Ohkubo et al. Chem. Commun., 48, 4314 (2012).
Corresponding Author: S. Aoyagi (aoyagi@nsc.nagoya-cu.ac.jp)- 22 -

1-9








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

1-10
Energetics and electronic structure of corannulene-intercalated
bilayer-graphene○Mina Maruyama, Susumu Okada
Department of Physics, University of Tsukuba, Ibaraki 305-8577, Japan

Graphite intercalation compounds (GICs) are representative examples of van der Waals
heterocomplexes consisting of host graphene layers and guest layers consisting of atoms or
molecules [1]. GICs basically show unusual electronic properties owing to charge transfer
between the host and guest layers. In addition to the electronic properties, guest intercalants
confined in two-dimensional nano-spacing between graphene layers possess uniquearrangement and conformations those are hardly observed in their bulk phases. In ourprevious work, intercalating bowl-shaped hydrocarbon sumanene induces electron and hole
doping on bilayer graphene, even though the complex is comprised of carbon atoms.
Furthermore, molecular conformation of sumanene between graphene layers changes frombowl to flat by applying vertical pressure of 1 GPa. Following our previous work, in this work,
we investigate energetics and electronic structure of corannulene-intercalated
bilayer-graphene by using density functional theory.
Corannulene (C20H10) is the other bowl shaped hydrocarbon molecule consisting of apentagon and five hexagonal rings (Figure 1a). Energy differences between bowl and flat
conformations of corannulene are summarized in Table I. An isolated corannulene with abowl conformation is more stable than(a)(b)
that with a flat conformation of whichenergy difference is 435 meV. This
energy difference substantially decreases
by inserting corannulene into theinterlayer spacing of bilayer graphene(Fig. 1b). The calculated energy
difference is 65 meV, indicating thatcorannulene undergoes conformation
change between bilayer graphene underthe vertical pressure of 140 MPa. We Fig. 1 Geometric structures of (a) corannulene molecule
also found that electron and hole doing and (b) corannulene-intercalated AA stacking
occurs on graphene layers when thebilayer-graphene with bowl shaped conformation.
corannulene has bowl conformation.
Table 1. Energy difference between bowl and flat conformation of corannulene.
Energy [meV]mol.

mol. on monolayer

GIC with AA stack.

435

265

65

[1] M. S. Dresselhaus & G. Dresselhaus, Adv. Phys. 30, 130 (1981).
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp- 24 -2-1

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- 25 -

2-2
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- 26 -

2-3In-situ TEM observation of laser induced carbon nanostructure growth○Ryosuke Senga1, Yung-Chang Lin1, Sapna Sinha1, Takeshi Kaneko2, Norihiro Okoshi2,
Takeo Sasaki2, Shigeyuki Morishita2, Hidetaka Sawada2 and Kazu Suenaga1
1

Nanomaterial research institute, AIST, Tsukuba 305-8565, Japan
2
JEOL Ltd., Akishima, Tokyo 196-8558, Japan

Various methods have been used to synthesize carbon nanomaterials, such as laser ablation,arc discharge, and chemical vapor deposition, and it is now possible to control their structures,such as the diameter and number of layers of carbon nanotubes, with high precision. The growthmechanism of carbon nanomaterials has also been discussed for many years, and various
models have been proposed both experimentally and theoretically [1-4]. However, it is still
unclear what happens to the catalytic metal in the initial stage of growth process and how thechirality and number of layers are determined, because there are few examples that directly
observe the precipitation of carbon atoms on metal catalysts.
In this study, using a laser irradiation system (LuminaryTM Micro) in a transmission electron
microscope (TEM) developed by JEOL Ltd. and IDES, Inc., we have succeeded in directly
observing the formation of tube- or onion-shaped carbon nanostructures around metal particles
activated by laser ablation. The technique enables in-situ TEM observation while irradiating alaser beam parallel to the electron beam onto a sample. By controlling the laser power, it ispossible to minimize the vibration and drift of the sample and keep high spatial resolution
during the laser irradiation.
In our experiment, we prepared ferrocene nanoclusters deposited on a lacey carbon film byvacuum deposition. When the sample was irradiated with a laser at a wavelength of 577 nmwith an output power of 50 mW, the ferrocene decomposed instantly to form iron particles.
Then, the iron particles randomly moved on the carbon film while changing their shape, forming
tube-like structures along their path under the continuous square wave (1kHz~5kHz) laser
irradiation. The surface of the iron particles repeatedly alternated between spherical and facetedin the process. Interestingly, the graphitic structures formed most likely at the faceting moment,suggesting a correlation between the tube chirality and facet orientation. This method, whichenables direct observation ofphysicalphenomenaandchemical reactions induced by alaser in atomic scale, would be
a promising candidate for aparadigm shift in a wide rangeof fields, including photochemistry and -biology, as wellFig.1 Schematic of the laser irradiation system in TEM (LuminaryTM Micro).
as materials science.
The center of the electron beam and the laser are adjusted to be the same.
[1] S. Iijima, Materials Science and Engineering: B 19, 172 (1993)[2] H. Zhu et al., Small 1, 1180 (2005)[3] H. Yoshida et al., Nano Letters 8, 2082 (2008)[4] M. Kumar and Y. Ando, Journal of Nanoscience and Nanotechnology 10, 3739 (2010)
Corresponding Author: R. Senga
Tel: +81-29-862-6518
E-mail: ryosuke-senga@aist.go.jp- 27 -

2-4
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2-5
Multifaceted approaches to quantitative surface characterization of
as-grown and acid treated single-walled carbon nanotubes○Kazufumi Kobashi1, Yoko Iizumi1, Kazutoshi Hirota2, Naoki Shinomori2, Kazuhiro
Shimamoto2, Yasumasa Koga2, Takahiro Morimoto1, Toshiya Okazaki1
1

National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan
2
Sumika Chemical Analysis Services, Ltd., Osaka 541-0043, JapanThe surfaces of an individual carbon nanotube (CNT) and its bundle have been analyzed overa few decades to utilize the excellent properties. In recent years, understanding the macroscalesurfaces created by large number of CNTs is getting requisite in the academic and industrial
fields. Diverse analytical methods have so far provided the averaged or localized data, however
the quantitative characterization from a multifaceted aspect remains challenging.
Here, we propose multifaceted approaches to quantitatively characterize the macroscalesurfaces of CNTs by 11 different analytical methods (Raman, far and mid IR, TEM, Boehm
titration, TGA, weight change, TPD/MS, EGA/MS, XPS, SEM/EDS). Our characterization isbased on the averaged, localized, mapped [1] data of surface functional groups, and revealed
the kind, amount, distribution of both as-grown and acid treated, single-walled CNTs. In
addition to the analysis of functional groups, interestingly the adsorbed water on the surfaces
was quantified, which we believe important to understand CNTs surfaces.
A comparison between as-grown and functionalized CNTs can present a good example tounderstand the surfaces. We selected Zeonano SG101 as single-walled CNTs with high carbon
purity (>99 wt%). To achieve a homogeneous functionalization without severely disrupting
CNTs, the powder was exfoliated in viscous liquid of glycerol at rt by stir bar [2] before acidtreatment with 22 wt% H2SO4 aqueous solution and KMnO4 at 80oC for 2h. The acid treated
CNTs mainly possessed carboxylic
acid (13 wt%) and hydroxy (6 wt%)groups in the total functional groups(41 wt%). The adsorbed water
increased by the acid treatment andreached up to ~20 wt%. Furthermore,
based on the obtained results, theplausible chemical structure of the acidtreated CNTs can be drawn (Figure).
Taken together, our findings indicate animportance to analyze the macroscale
CNTs surfaces in a multiple manner,and can be applied to understandsurfaces of nanocarbon materials.
[1] H. Nakajima et al., Nanoscale 11, 21487(2019).
[2] K. Kobashi et al. ACS Appl. Nano Mater.,
3, 1391 (2020).
Corresponding Author: K. Kobashi
Tel: +81-29-861-4874,
E-mail: kobashi-kazufumi@aist.go.jp

Figure Chemical structural model for the sidewalls of acidtreated single-walled CNTs.

- 29 -

2-6
Primary Particles of Detonation Nanodiamond: The Only Scalable, Single
Nano-sized and Well-Characterized Carbon Particle○Eiji Ōsawa1, Ryoko Yamanoi1, Shuichi Sasaki1, and Amanda Barnard2
1

NanoCarbon Res. Inst., AREC, Shinshu University, Ueda, Nagano 386-8567, Japan.
Research School of Computer Science, ANU College Engineering and Computer Science, The
Australian National University, Canberra ACT 2601, Australia.

2

PRODUCTION
Detonation nanodiamonds (DND) were discovered by Danilenko in 1964, in the form of
micron-sized and extremely tight agglomerates. The interparticle bonding resisted all attempts
to break until 2005, when attrition milling using water as medium was found effective to reachits primary particles (PP) [1]. The nature of agglomeration was found Coulombic attraction
between surface charges of neighboring particles [2]. Among the known methods of producing
carbon nanoparticles [3], the detonation-milling method is at the moment considered the bestin terms of simplicity, efficiency and scalability. Thus, we now have a stable colloidal solutionof a standard material for nanotechnology.
IDENTIFICATION
Conventional DLS method gave 2.6s0.5nm as the average diameter of PPDND. This
diameter coincides with those reported for the first nanodiamonds isolated from Allendemeteorites in 1987 [4]. Based on these pieces of evidence we suspect that the presently
prevailing commercial nanodiamods of 4~5 nm in diameter [3] are likely dominated by thedimers. The {111} facets of PPDND are considered graphitized, according to our calculationsof all possible models of real sizes, and based on the translucent but extremely dense blackcolor of the colloidal solution. Enormous strain generated by this phase transition caused
amorphization of the top layer(s) of core diamond. Our calculations indicatethat core diamond in PPDND comprises only 60% of the total carbon atoms.
Shapes are estimated almost entirely by computation. With the aid of 
surface transformation map involving all metamorphic forms (to be displayedin the talk), three intermediate structures (A is the most likely) were identified
as dominating in the detonation mixture.
A
One remarkable aspect of PPDND is that it dissolves well in water and manyother organic solvents including DMSO. While such a behavior may look unusualfor diamond having as many as 1,700 carbon atoms, Petit noted exceptionally strong hydration
towards the surface of PPDND [5]. It is likely that other single-nano particles having
isomorphic crystal systems may behave more or less similarly with their extremely active
surfaces. Properties of single-nano particles could be entirely unique compared to conventional
chemical materials.
[1] A. Krueger et al., Carbon, 2005, 43, 1772. [2] A. Barnard et al., J. Mater. Chem. 2008, 18, 4038. [3]‘Ultrananocrystalline Diamond, 2nd Edition,’ O. A. Shenderova & D. M. Gruen (eds.), Elsevier, Amsterdam, 2012,
pp. 558. [4] R. S. Lewis et al., Nature, 1987, 325, 160. [5] T. Petit et al., J. Phys. Chem. C, 2017, 121, 5185.
Corresponding Author: E. Ōsawa
Tel: +81-268-75-8381, E-mail: osawa@nano-carbon.jp- 30 -

2-7
Solubilization and purification of carbon nanohorn aggregates using
cyclodextrins as surfactants○Hiroki Hanayama1, Junya Yamada1, Koji Harano1, Eiichi Nakamura1
1

Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan

Solubilization of graphitic nanomaterials is of great importance for their application inmaterials science. Surfactants with a polar head and nonpolar tails reduced the interfacial
tension through non-specific hydrophobic or S-S interactions between the tails and the surfaceof nanocarbons. The hydrophobicity of surface is affected not only by chemical properties ofthe surface itself but also by the surface roughness. For example, the spiked structure increases
the hydrophobicity of surface as discussed by Cassie, Wenzel, and others known assuperhydrophobicity [1]. Therefore, we considered that cyclodextrins (D-, E- and J-CDs), cyclic
saccharides made from six to eight glucose units, site-selectively functionalized tips of the
spikes by mimicking hemimicelle structure of surfactant and reduced hydrophobicity of the
spiked surface. Here, we reported the efficient solubilization of carbon nanohorn aggregates(NHa), which are spherical particles of 50–150 nm in diameter bearing spikes of tapered-shapecarbon nanotubes, with only 1 wt% of CDs via tip-cognitive binding in water [2], whileconventional surfactants require excess amount for solubilization due to non-selectivefunctionalization [3]. Tip-selective
binding enabled purification of NHa
Cavity andrim bindingby removing graphitic ball-shaped
impurities without spiked surface asa precipitate. The binding of CDs to
1 wt% cyclodextrin
the tips of NHa was visuallyconfirmed by using single-molecule
Carbon nanohorn
1) sonication
aggregate (NHa)– GB
atomic-resolution real-time electron2) centrifuge+
as precipitate
microscopic analysis (SMART-EM)
Graphitic ballGB[4], and the analysis also revealed
shaped impurity(GB)that CDs recognized the tip larger
water–
than cavity size via rim binding
H2N NH2NH
H2 N
2 NaNH2/filtration/mode other than conventional
liq NH3
H2N
water wash
NHa NH
NHa
NHa
NHa
2
H2N
cavity binding mode. A gram-scale
NH2
H2N
purification was achieved by using
amino-NHa
D-CD, which was easily removed
NHa solubilized in waterfrom NHa by washing with water.
The purified NHa was successfully Fig.1. Solubilization and purification of NHa by binding of CDs
utilized in further amination to the tio of NHa followed by amination reaction.
reaction.
[1] A. Lafuma, D. Quéré, Nat. Mater., 2, 457–460 (2003). [2] H. Hanayama, J. Yamada, K. Harano, E. Nakamura,Chem. Asian. J., 15, 1549–1552 (2020). [3] M. Zhang, M. Yudasaka, J. Miyazaki, J. fan, S. Iijima, J. Phys. Chem.
B, 109, 22201–22204 (2005). [4] E. Nakamura, Acc. Chem. Res., 50, 1281–1292 (2017).
Corresponding Author: E. Nakamura, K. Harano
Tel: +81-3-5841-4369, Fax: +81-3-5841-4370,
E-mail: nakamura@chem.s.u-tokyo.ac.jp, harano@chem.s.u-tokyo.ac.jp- 31 -

2-8
Visualizing outer surface functionalization of carbon nanohorn
spherical aggregates by highly spatially resolved SEM-EDS○Hideaki Nakajima1, Takahiro Morimoto1, Kazufumi Kobashi1, Minfang Zhang1,
Ioanna K. Sideri2, Nikos Tagmatarchis2, and Toshiya Okazaki1
1

National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan
2
National Hellenic Research Foundation, Athens 11635, Greece

Single-walled carbon nanohorns (CNHs) exhibit a great potential for diverse applications
such as gas storage, catalyst support, and drug carrier. Although chemical functionalization of
CNHs is key approach for enhancing the dispersibility and handling in solution, they inherently
form robust spherical “dahlia-type” aggregates (Fig. 1a) which may prevent chemical reactivity.
Theoretical and experimental studies have identified spatial information related to thefunctional groups on each tubule. However, the overall characteristics of dahlia aggregatesremain unclear. Here, we successfully visualize the site-selective chemical functionalization in
CNH dahlia-type aggregates by using a highly spatial-resolved energy dispersive X-ray
spectrometry (EDS) analysis in scanning electron microscopy (SEM) [1]. The differences ofthe degree of functionalization between the outer surface and the inner core of individual dahlia
aggregates is quantitatively discussed.
Figure 1(b) shows a schematic of SEM-EDS measurement setup. Highly sensitive X-ray
detection and drift-free EDS operation enable us to image light elements with a sufficient spatial
resolution of < 10 nm [2]. CNH sample was synthesized from graphite targets by CO2 laser
ablation and was chemically modified with aniline derivative tert-butyl 2-(2(2-(4aminobenzamido)-ethoxy)ethoxy)ethyl carbamate.
Figure 1(c) indicates the analyticalresult of N atomic concentration thatderives from the covalently addedfunctional groups on CNHs. The spatial
distribution of functional groups isclearly obtained. Especially, the N
concentration is higher at fringe of theindividual dahlia structure. This result
suggests that functionalization of CNHs
selectively occurs on the outer surface ofthe dahlia-type aggregate. The detailed Figure 1. (a) Schematic of a spherical dahlia-type
analysis about the degree of aggregate of CNHs and (b) highly spatially resolved SEMEDS setup. (c) Analytical results of N atomic concentration
functionalization and mechanism of image superimposed on SEM image.
chemical modification in CNHs will be
discussed in the symposium.
Acknowledgments: This work was supported by a project (JPNP16010) commissioned by the
New Energy and Industrial Technology Development Organization (NEDO).
[1] H. Nakajima et al., J. Phys. Chem. C 124, 25142 (2020). [2] H. Nakajima et al., Nanoscale 11, 21487 (2019).
Corresponding Author: Toshiya Okazaki
Tel: +81-29-861-4173 / E-mail: toshi.okazaki@aist.go.jp- 32 -

3-1






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' (#0)94)!-;)3#773)56);-9 ' ()+6=%-;)3)56-;;       )+:)54+  ' (15-;)3);644<5                      - 34 -

3-3

Field-induced dynamics of Ne atom around graphene edges○Yanlin Gao, Susumu Okada
Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba,
Tsukuba, 305-8571, Japan
Graphene has been extensively studied in both fundamental and applied sciences, because of
its unusual geometric and electrical properties making it an emerging material for wide
applications. The electronic properties of graphene are sensitive to its edge structures. Thereby, theedge structure characterization of graphene is very important. Field ion microscope (FIM) is oneof microscopic techniques providing the atomic-resolution image of nanomaterials, such as the
protrusions of surface, edges, and tips. Rare gas atoms around these surfaces and edges ofnanomaterials are ionized and then bounced under the strong positive electric field, forming
atomic-resolution images on the screen. These
images reflect the atomic structures of thesetarget nanomaterials. Although, the FIM canprovide the atomic-resolution images of carbon
nanomaterials, microscopic dynamics of raregas atoms around the carbon nanostructures
under the positive electric field is not addressedto date. Thus, in this work, we aim totheoretically investigate the microscopic
dynamics of Ne around the graphene edges to Fig.1. A structural model to simulate Ne atom aroundgive theoretical insight into the field ion the graphene edges under the positive electric field.
microscope, based on the density functional Gray, red, and white balls indicate C, Ne, and H
theory combined with the effective screening atoms, respectively.
medium method [Fig. 1]
Our calculations showed that the dynamics of Ne atom depends on its initial positions withrespect to the graphene edge shape. The Ne atom is attracted to the edge atomic sites of graphene,
when it initially is located above the graphene edges with both zigzag and armchair edges. Fromthe side of the zigzag edge, Ne also moves toward to the graphene because of the electrostaticinteraction between Ne and edge states. In contrast, Ne is rapidly accelerated toward to the counterelectrode when it initially is located aside the armchair edge.

- 35 -

3-4






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3-6
Waveguide coupled cavity-enhanced light emissionfrom individual carbon nanotubes○D. Yamashita1, H. Machiya2, 3, K. Otsuka2, A. Ishii1, 2 and Y. K. Kato1, 2
1Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan
Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama 351-0198, Japan3
Department of Electrical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2

Carbon-nanotube-based photonic devices have potential applications in the framework ofon-chip optical communications. Single-walled carbon nanotubes (CNTs) exhibit telecom-band
light emission at room temperature and they can be directly grown onto silicon substrates,
which is favorable in terms of compatibility with silicon photonics. Recently, integration of
CNTs with microcavities and waveguides has been demonstrated [1-4], but the deposition of
CNTs has been performed by using solution processes. To harness the unique optical propertiesof CNTs such as single photon emission, it is important to isolate individual CNTs and eliminate
contamination during the solution-based processes.
Here, individual CNT telecom-wavelength emitters are integrated onto a microcavity anda waveguide. Using finite-difference time-domain simulations, we have designed an air-mode
photonic crystal nanobeam cavity with one thin end mirror for guiding the light into the
waveguide. CNTs are grown on a SiO2/Si substrate and transferred on the cavities through anall-dry process ensuring cleanliness of CNTs and devices. We characterize the devices using
two geometries: a top detection configuration that measures light emission from CNTs on a
nanobeam cavity, and a side detection configuration that collects light emission coupled to the
waveguide. The nanobeam cavity with a small mode volume enhances light emission from achirality-identified single CNT. The cavity-coupled light propagates into the waveguide and isemitted from the waveguide facet with a sharp linewidth and a large off-resonance rejection.
This work is supported in part by JSPS (KAKENHI JP19J00894, JP20H02558, JP20J00817, JP20K15137,
JP20K15199), MIC (SCOPE 191503001), MEXT (Nanotechnology Platform JPMXP09F19UT0078) and RIKEN(Incentive Research Project). D.Y., H.M. and K.O. are supported by the JSPS Research Fellowship. The finitedifference time-domain simulations were performed using the HOKUSAI BigWaterfall supercomputer at RIKEN.
We acknowledge the Advanced Manufacturing Support Team at RIKEN for technical assistance.
[1] F. Pyatkov, V. Fütterling, S. Khasminskaya, B. S. Flavel, F. Hennrich, M. M. Kappes, R. Krupke, and W. H.
P. Pernice, Nat. Photonics 10, 420 (2016).
[2] A. Noury, X. L. Roux, L. Vivien, and N. Izard, Nanotechnology 26, 345201 (2015).
[3] T. H. C. Hoang, E. Durán-Valdeiglesias, C. Alonso-Ramos, S. Serna, W. Zhang, M. Balestrieri, A.-S. Keita,
N. Caselli, F. Biccari, X. L. Roux, A. Filoramo, M. Gurioli, L. Vivien, and E. Cassan, Opt. Lett. 42, 2228 (2017).
[4] N. Higuchi, H. Niiyama, K. Nakagawa, and H. Maki, ACS Appl. Nano Mater. 3,7678 (2020).
Corresponding Author: Yuichiro K. Kato
Tel: +81-48-462-1449
Web: http://katogroup.riken.jp
E-mail: yuichiro.kato@riken.jp- 39 -

3-7
Analytical Estimation of Quantum Emitters Formed in Air-Suspended
Single-Walled Carbon Nanotubes○Daichi Kozawa1, Xiaojian Wu2, Akihiro Ishii1,3, Jacob Fortner2, Keigo Otsuka3, Rong
Xiang4, Taiki Inoue4, Shigeo Maruyama4,5, YuHuang Wang2,6, Yuichiro K. Kato1,3
1

Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics
Department of Chemistry and Biochemistry, University of Maryland, College Park
3
Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research4
Department of Mechanical Engineering, The University of Tokyo
5
Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST)
6Maryland NanoCenter, University of Maryland, College Park
2

Single-walled carbon nanotubes (SWCNTs) realize single-photon emission simultaneously
at room temperature and in the telecom range suitable for the practical use [1]. Air-suspended
nanotubes provide an ideal platform for a quantum emitter that exhibiting brightphotoluminescence (PL). While the precise estimation of emitter density plays a key role toevaluate the quality of the single photon sources, the quantitative analysis in the air-suspended
system is lacking. We here determine the defect density by comparing the PL intensity change
in functionalization obtained from experiments with simulations. A theoretical model based ona one-dimensional diffusion equation is developed to describe the exciton density profile and
PL intensity in pristine and functionalized tubes. We find that the PL intensity is more sensitive
to the introduction of defects in the air-suspended tubes than typical solution-processed tubes
because only the trapping E11 excitons at defects contribute to the quenching in the former. The
defect density increases as the tube diameter decreases which is consistent with previously
reported diameter-dependent reactivity model [2].
Acknowledgments
This work was supported in part by RIKEN (Special Postdoctoral Researcher Program), MIC(SCOPE 191503001), JSPS (KAKENHI JP15H05760, JP18H05329, JP20K15112,
JP20K15137, JP20H02558), and MEXT (Nanotechnology Platform JPMXP09F19UT0077).
We thank the Advanced Manufacturing Support Team at RIKEN for technical assistance.
References[1]
X. He, N. F. Hartmann, X. Ma, Y. Kim, R. Ihly, J. L. Blackburn, W. Gao, J. Kono, Y. Yomogida, A. Hirano,
T. Tanaka, H. Kataura, H. Htoon, and S. K. Doorn, Nat. Photonics 11, 577 (2017).
[2]
D. Kozawa, X. Wu, A. Ishii, J. Fortner, K. Otsuka, R. Xiang, T. Inoue, S. Maruyama, Y-H. Wang, Y. K.
Kato, Manuscript in preparation (2021).
Corresponding Author: Y. K. Kato
Tel: +81-48-462-1449
Web: http://katogroup.riken.jp/
E-mail: yuichiro.kato@riken.jp- 40 -

3-8
Mechanical Vibration of Single-walled Carbon Nanotubes in a Water Using
Finite Element Model○Daisuke Miyashiro1,2, Ryo Hamano1, Hisao Taira3, Kazuo Umemura1

1

Department of Physics, Graduate School of Science, Tokyo University of Science, 1-3 Kagurazaka,
Shinjuku-ku,Tokyo, Japan.
2
ESTECH CORP., 2-7-31 Fukuura, Kanazawa-ku, Yokohama, Japan
3

Faculty of Education, Hokkaido University of Education, Sapporo, Hokkaido 002-8502, Japan

There are studies to apply the excellent mechanical properties of single-walled carbon
nanotubes (SWCNTs) as a nanomechanical resonator. Assuming mass measurement of
biomolecules by them, long SWCNTs have a problem that it is difficult to measure the basic
vibrations due to the influence of water damping. While the molecular dynamics (MD) method
can perform precise calculations at the molecular level, it requires a huge amount of calculation
time for applying to mechanical vibration of long SWCNTs. On the other hand, there are studies
on vibrational analysis of long SWCNTs using the finite element (FE) method. However, there
are few studies of FE method for SWCNTs in a water. Therefore, we analyzed the mechanicalvibration taking into account the damping according to the length of SWCNT in a water using
FE method.
The FE model of SWCNTs used for vibration analysis was created in the range of 25 to 200
nm. In this model, a six-membered ring network was formed by expressing covalent bonds
between carbons with beam elements. The properties of these beam elements were definedaccording to the beam elements diameter of 0.147 nm, length of 0.142nm and the Young's
modulus of 5.49 TPa. The effect of water on SWCNTs loaded the mass of water molecules on
their carbon atoms and defined structural damping according to SWCNTs length [1]. The
analysis solver used the commercial MSC Nastran.
We verified the validity of the FE model by static analysis and investigated the mechanicalvibration of SWCNTs by frequency response analysis under the conditions that SWCNTs arein a vacuum and water. The Young's modulus of SWCNTs obtained by static analysis isapproximately 1.0 TPa, which is in agreement with the studies reported in the experiment. In avacuum state, the natural frequency of bending vibration in SWCNTs by FE method longer than
25nm can be represented by Bernoulli-Euler beam theory. In the water case, we have clarified
that the natural frequency of bending vibration in SWCNTs were reduced by about 60%
compared with the vacuum case. In particular, SWCNTs longer than 100 nm are more affectedby water damping. These results mean that the present method is useful for analyzing themechanical vibration of SWCNTs in a water.
[1] D. Miyashiro et al. Compos. Part C, 2, 100028 (2020).

- 41 -

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- 42 -

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'77+2(1+*7869)896+3-10Investigation of Schottky contact for transparent solar cellwith monolayer WS2○X. He1, T. Kaneko1, and T. Kato1,2
1

Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Layered transition metal dichalcogenide (TMD) is known as a true 2D material withexcellent semiconducting properties. TMD is one of the most attractive materials for futuretransparent and flexible optoelectrical devices due to their atomically thin structure, band gap
in visible light range, and high optical transparency. Those merits of TMD have not been
applied for transparent and flexible solar cell, which is attracted intense attention as anext-generation energy harvesting technology. Recently, we have developed a new fabrication
process of TMD-based solar cell [1]. In our process, Schottky type device configuration is
utilized, which can be simply formed by asymmetrically contacting electrodes and TMD (Fig.
1(a)). The power conversion efficiency clearly depended on the work function difference
between two electrodes (ΔWF), and a higher efficiency could be obtained with higher ΔWF(Pd-Ni). Based on the optimizations of electrodes and distance, the power conversion
efficiency (PCE) can be reached up to 0.7 %, which is the highest value for solar cell withsimilar TMD thickness [1].
In order to achieve higher
efficiency, it is important toinvestigate the detailed contact
between TMD and electrodes. Thin
metal (Mx) deposited ITO and pure
ITO were used as Schottky andOhmicelectrode,
respectively.
Monolayer WS2 was used as asuspended channel between each Fig.1. (a) Typical device structure used in this study.
electrode. Schottky barrier height (b) Plot of SBH as a function of the WF of thin
(SBH)
was
measuredbymetal modified ITO.
photocurrent line scan through thechannel under different bias conditions for various devices.
The SBH of Mx = Au, Ag, Cu increase with WF of Mx/ITO (Fig.1(b)), which can be
explained with traditional band model. Although higher SBH can be expected with Ni byfollowing this trend, the SBH of Ni was lower than that of Cu. This can be explained bydifference of Fermi level pinning effect. The Fermi level pinning factor (S), i.e. weakness of
Fermi level pining effect, is known to be sensitive to the binding energy between metal andchannel material. Ni is known to have higher binding energy than that of other metals such as
Au, Ag, and Cu. Thus, Ni should show smaller S and lower SBH than other metals, which isconsistent with our results (Fig. 1(b)). Based on these investigations, we successfully revealed
the most suitable Mx (Cu) for Schottky electrode in TMD-based solar cell, which has
relatively higher WF and weaker pinning effect, resulting in higher SBH and PCE. Thisfinding is essential for understanding the contact between TMD and electrodes, and further
improvement of the device performance can be expected.
[1] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato, Sci. Rep. 7, 11967 (2017).
Corresponding Author: Toshiaki Kato
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: kato12@ecei.tohoku.ac.jp- 43 -

3-11

Fabrication of Graphene/h-BN/graphene stacked mechanical resonator○Kazuki Yasoshima1, Taichi Inoue1, Kuniharu Takei1, Takayuki Arie1, Seiji Akita1
1

Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan

Atomically thin materials are expected as elements for nano-electro-mechanicalresonator (NEMR) because of their unique electrical and mechanical properties. In
addition, stacked 2D materials have also applied to NEMRs, which is expected for
exploiting mechanical effects of heterojunction and interlayer interactions.[1] Here, weinvestigate the resonance properties of graphene/h-BN/graphene trilayer NEMR.
Sample fabrication process is as follows. First, we transferred CVD grown monolayergraphene as bottom layer on the electrodes on n+-Si/SiO2 substrate followed bytransferring CVD grown multilayer h-BN (~3 nm thick, Graphene super-market, USA)on the graphene. Finally, CVD grown monolayer-graphene as top layer was transferredon the h-BN. All transfer process was performed by using polymethyl methacrylate. To
fabricate suspended structure, SiO2 layer underneath of the stacked layer was etched using
buffered HF. Figure 1 shows a scanning electron
microscope image of thus prepared sample, which
is a drum type resonator with a typical diameter of
6 Pm. Note that the top layer graphene waselectrically floating. Resonance properties ofgraphene/hBN/graphene NEMR were evaluatedby using frequency-modulation (FM) down
mixing method[2] with modulation frequency fmod
= 670 Hz under the vacuum of ~ 10-3 Pa as showng 1 SEM image
g of the device
Fig.
in Fig. 2.
Figure 3 shows a grayscale plot of drain source
current Ids as a function of gate voltage Vgs (x-axis)
and frequency (y-axis). The white area
corresponds to larger vibration amplitude andindicates resonance of the trilayer NEMR. At Vgs> 0, the resonance frequency is first decreased
from 6.8 MHz to 6.3 MHz with increasing Vgs,
g 2 Measurement setup.
pFig.
which is caused by electrical softening effect.
Further application of Vgs induces the monotonous
increase of the resonance frequency because of
the increase of the tension of the stacked layer.
Thus, we have successfully fabricate thegraphene/hBN/graphene NEMR.
References: [1] T.Inoue et al. 2D Materials, 5, 045022(2018).
[2] V. Sazanova et al. Nature 431, 284 (2004).
Corresponding Author: K. Yasoshima
Tel: +81-90-8113-7597,
E-mail: yasoshima-4@pe.osakafu-u.ac.jp- 44 -

Fig. 3 Gray scale plot of resonance curve

as a function of gate voltage Vgs.

3-12
p–n junction in graphene nanoribbon modified by periodically doped
boron and nitrogen atoms○Sake Wang1, Md Shafiqul Islam1, Nguyen T. Hung1, Hongyu Tian2, Ahmad R. T. Nugraha3,
Riichiro Saito1
12

Department of Physics, Tohoku University, Sendai 980-8578, Japan
School of Physics and Electronic Engineering, Linyi University, Linyi 276005, China
3
Research Center for Physics, LIPI, Tangerang Selatan 15314, Indonesia

Graphene nanoribbon (GNR) is a one-dimensional graphene nanostructure whose electronic
property depends on edge geometry, ribbon width, chemical doping, and crystallographic
symmetry. According to the edge geometry, there are two categories of GNRs, namely, armchair
GNRs (AGNRs) and zigzag GNRs. In particular, the energy band gaps of AGNRs are known
to be inversely proportional to the ribbon width [1]. Due to such a gap tunability, the AGNRs
are considered beneficial for electronic device applications. Moreover, the energy band gaps of
AGNRs are sensitive to the chemical doping and doping position in the GNR.
A bottom-up approach of substitutional impurity for GNR using a well-defined precursor
molecule was reported useful to fabricate atomically-precise doped GNRs [2]. The experiments[3] indicate that nowadays the periodic and precise doping of boron (B) or nitrogen (N) atoms
can be experimentally achieved. However, the extensions of the nanoelectronics applicationsof the synthesized materials are not yet investigated. Therefore, by employing the B-doped ptype and N-doped n-type GNRs, we could construct a p–n junction theoretically, which isimportant for designing an integrated circuit.
We expect that the periodic doping of electron acceptors or donors will induce delocalized
impurity-induced subbands, where physical properties are fundamentally different from an
impurity level in the conventional semiconductor physics. Therefore, combining density
functional theory, Wannier function basis set, and nonequilibrium Green’s function, we explore
electronic transport properties of a p–n junction in which the p (n)-side is based on periodically
B (N)-doped AGNR. We consider practical devices with various smooth potential profiles ofthe depletion region. The I–V curves demonstrate a rectification effect behavior in the p–njunction, while slowing changing potential profile near the p–n junction would suppress thecurrent. However, for the bias voltage between 0 and 0.3 V, since only the impurity bands
contribute to the transmission, the electrical current is robust against the change of thesmoothness of potential profile because the delocalization of the wave function for the impurity
band cannot recognize the change of smoothness of potential profile. We also discuss thevalidity of our results at room temperature. The findings suggest that the doped AGNR could
have potential nanoelectronics applications.
[1] Y.-W. Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 97, 216803 (2006).
[2] J. Cai et al. Nature 466, 470 (2010).
[3] E. Carbonell-Sanromà et al. Nano Lett. 17, 50 (2017); S. Kawai et al. Nat. Commun. 6, 8098 (2015).
Corresponding Author: S. Wang
Tel: +81-22-795-7754, Fax: +81-22-795-6447,
E-mail: sake@flex.phys.tohoku.ac.jp- 45 -

    









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1P-1- 46 -

1P-2
Chirality and helicity sorting of functionalized single-walled carbon
nanotube○Yui Konno, Michio Yamada, Yutaka Maeda
Department of Chemistry, Tokyo Gakugei University, Tokyo 184-8501, Japan
Single-walled carbon nanotubes (SWNTs) have attracted attention as nanocarbon materials
with semiconductor or metallic properties. These properties depend on the diameter and thechiral angle of SWNTs. In practical applications of SWNTs as optoelectronic devices, it isimportant to separate SWNTs to improve their performance. The chirality sorting of SWNTs
has been widely discovered with several methods such as ion-exchange chromatography [1],density gradient ultracentrifugation (DGU) [2], gel chromatography [3], and aqueous
two-phase extraction (ATPE) [4]. The chemical functionalization of SWNTs has been
extensively studied to increase their dispersibility and add new functions. Recent studies had
clarified that oxidation, arylation, and alkylation reactions are effective to modulate local
electronic structures of SWNTs [5]. As a result, new photoluminescence (PL) is observed
from functionalized SWNTs efficiently depending on the addenda. We have previously
investigated the alkylation and oxidation of SWNTs and revealed that the functionalization of(6,5) SWNTs selectively induced new PL peaks in a wide range from 1092 nm to 1268 nm,
depending on the reagents used [5-7]. However, these studies had been conducted using the
SWNTs mixture. The separation of SWNTs is also effective as functionalization to improvetheir intrinsic properties and performance in applications. For this purpose, we conducted theseparation of functionalized SWNTs by gel chromatography [8].
SWNTs was functionalized using 1,2-bis(bromomethyl)benzene, which induced red-shifted
PL at ~1230 nm, as in previous report. The gel chromatography method using a Sephacryl gel
and three surfactants (sodium dodecyl sulfate (SDS), sodium cholate (SC), and sodium
deoxycholate (DOC)), reported by Kataura and co-workers, was applied to the separation of
the functionalized SWNTs due to the high efficiency of a separation of unfunctionalized
SWNTs [9]. The separation of SWNTs was performed by a stepwise increase of DOC
concentration in the mobile phase (0.5 wt% SC and 0.5 wt% SDS aqueous solution). (6,5) and(11,-5) SWNTs were eluted even after functionalization at DOC concentrations of 0.029 and0.0315 wt%, respectively. The functionalized (6,5) and (11,-5) SWNTs exhibited themirror-image CD spectra, similar to those of unfunctionalized SWNTs.
PL measurement of SWNTs at various concentrations provided evidence for theconcentration quenching of E11 PL due to the reabsorption. On the other hand, smaller
concentration quenching of the red-shifted PL peak was observed in the functionalized
SWNTs. In addition, the concentration quenching of both SWNTs and functionalized SWNTs
decreased after the separation.
1) Zeng, M. et al. Nature 2009, 460, 250-253. 2) Kappes, M. M. et al. J.
Phys. Chem. C 2009, 113, 14628-14632. 3) Kataura, H. et al. Nat.
Commun. 2011, 2, 309. 4) Zeng, M. et al. Adv. Mater. 2014, 26, 2800-2804.
5) Wang, Y. H. et al. Nat. Rev. Chem. 2019, 3, 375-392. 6) Maeda, Y. et al.
Nanoscale 2016, 8, 1691616921. 7) Maeda, Y. et al. RSC Adv. 2019, 9,13998-14003. 8) Maeda, Y. et al. J. Phys. Chem. C 2020, 124,
21886-21894. 9) Kataura, H. et al. Carbon, 2018, 132, 1-7.
Corresponding Author: Y. Maeda
Tel: +81-42-329-7512
E-mail: ymaeda@u-gakugei.ac.jp

Fig. CD spectra of the functionalized
SWNTs after the separation.

- 47 -

1P-3
Diameter-based separation of SWNTs
through their mechanical interlocking with nanorectangle○ Guoqing Cheng, and Naoki Komatsu
Graduate School of Human and Environmental Studies, Kyoto University, Kyoto 606-8501,
Japan
Although mechanical interlocking of SWNTs has attracted considerable attention [1], it has
not been used for separating SWNTs. In this work, a new host molecule named “nanorectangle”
connecting two nanocalipers by metal was designed, synthesized, and employed for separating
SWNTs. After HiPCO SWNTs were sonicated in 2-propanol followed by centrifugation, theresulting extract showed the red shift in the absorption of nanorectangle (Fig. 1a), indicating its
complexation with SWNTs. The mechanical interlocking of nanorectangle was observed in
TEM, where two anthracenes attached on the both faces of SWNT (Fig 1b). After removal of
host molecule through demetallization, the resulting SWNTs were analyzed by Raman andabsorption spectroscopies, revealing the diameter enrichment around 0.9 nm (Fig. 1c). Suchhigh selectivity was also confirmed with (6,5) and (7,6)-CoMoCAT SWNTs. As compared with
nanocalipers [2], the better selectivity was observed toward the smaller diameters (Fig. 1c).

Fig.1 a) Absorption spectra of nanorectangle and SWNT extract. b) TEM image and model structure (alkyl
chains are omitted) of SWNT wrapped with nanorectangle. c) Schematic structures of nanorectangle andnanocalipers complexed with SWNTs and their (n,m) selectivity in the map.
[1] B. Balakrishna, M. von Delius et al. Angew. Chem. Int. Ed., 59, 18774 (2020).
[2] G. Liu, N. Komatsu et al. J. Am. Chem. Soc. 135, 4805 (2013).
Corresponding Author: Naoki Komatsu, Tel: +81-75-753-6833, E-mail: komatsu.naoki.7w@kyoto-u.ac.jp- 48 -

1P-4
Annealing Influence on Hall Effect Measurementof Single-Walled Carbon Nanotube Thin Films○Hiroki Date1, Mika Nagatomo1, Akari Kobayashi1, Taiki Inoue2, Takenori Fujii3,
Esko I. Kauppien4, Shigeo Maruyama1, and Shohei Chiashi1
1Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2
Department of Applied Physics, Osaka University, Osaka 565-0871, Japan
3
Cryogenic Research Center, The University of Tokyo, Tokyo 113-0032, Japan
4
Department of Applied Physics, Aalto University, Aalto FI-00076, Finland

Single-walled carbon nanotubes (SWCNTs) are one-dimensional materials in whichgraphene is rolled up into a cylindrical shape and they are expected to be applied in various
industrial fields because of their high mechanical strength and electrical / thermal conductivity.
Many studies have been conducted on the electrical conductivity of SWCNTs. While eachindividual SWCNTs have a very high electrical conductivity [1], macroscale SWCNT materials
such as yarns and films, which are composed of bundled SWCNTs, have low electricalconductivity [2]. The doping effects of molecules in the air on the electrical conductivity of
SWCNTs were also studied [3]. However, the origin of the low electrical conductivity is
unknown and the yarn or thin films with high electrical conductivity have not been obtained.
Therefore, in this study, in order to clarify the carrier properties, the electrical conductivity of
SWCNT thin films [4] with different densities (i.e. different light transmittance) transferred onor suspended over the substrate was analyzed taking into account the adsorption effect. The
device for measurement is shown in Fig. 1. The resistance change was measured in a vacuumin the temperature range from room temperature to 400 K, and then the magnetic field responseof the Hall resistance was measured at 300 K. It was found that the resistance increased withincreasing temperature, and activation energy obtained from the temperature dependence of theresistance rise rate suggested that water molecule desorption increased the electrical resistance(Fig. 2). Furthermore, the magnetic field response of the Hall resistance revealed that thecarriers are holes and that the Hall resistance shows a non-linear change with respect to themagnetic field (Fig. 3). The non-linearity is thought to be due to the existence of two types ofcarriers with different mobilities or the one-dimensionality of SWCNTs [5].
−11

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ln ( J )

−2

−4

−6

on Si (70%T)
on Si (90%T)
suspended (70%T)
suspended (90%T)

0.00260.0028 0.003−1
1/T [K ]Hall Resistivity [ :m]

4
2
0

−2
−4
−10

on Si (70%T)
on Si (90%T)
suspended (70%T)
suspended (90%T)

0Magnetic Field [T]10

Fig. 1 Hall measurement Fig. 2 Temperature dependence of Fig. 3 Magnetic field dependence ofdevicewithsuspended the rate of the electrical resistance Hall resistivity.
SWCNT thin film.
increase due to desorption.
[1] T.W. Ebbesen et al., Nature, 382, 54 (1996). [2] N. Behabtu et al., Science, 339, 182 (2013).
[3] P.G. Collins et al., Science, 287, 1801 (2000).[4] A.G. Nasibulin et al., ACS Nano, 5, 3214 (2011).
[5] M.L. Roukes et al., Phys. Rev. Lett., 59, 3011 (1987).
Corresponding Author: S. Chiashi E-mail: chiashi@photon.t.u-tokyo.ac.jp- 49 -

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1P-6






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1P-7
Formation of self-assembled fibroin film on 2D materials

1)○Rio Takizawa1), Yoshiki Nakamura1), Kazunori Motai1), Mirano Tsukiiwa1),
Chishu Honma1), Yuhei Hayamizu1)
School of Materials and Chemical Technology Department of Materials Science and Engineering,Tokyo Institute of Technology, 2-12-1 Ookayama, meguroku, Tokyo, Japan

Silk fibroin is a protein which is a main component of silk. Silk fibroin is one of the mostwidely used natural materials for biomedical applications due to its excellent mechanicalproperties and biocompatibility. It is known that fibroins self-assemble into an ordered fibrilswith a E-sheet structure, and their composition and self-assembled structure can be changed bygenetic modification. The assembled structure can be used for bioelectronics withnanomaterials. Biosensors using 2 dimensional (2D) nanomaterials, such as graphene and MoS2,
are widely researched and expected to be high-performance, high-sensitivity sensors due totheir atomically-flat surface, high specific surface area, and excellent electrical properties. For
biosensor applications, it is important to create a surface that does not react with biomolecules
other than the target molecule. At the same time, it is essential to fix biomolecules that bind to
the target substance on the surface of the two-dimensional material. Fibroin can be a goodcandidate for this sake due to the mechanical stability of its self-assembled structures. However,to date, no research has been conducted on the self-assembly of fibroins on the surface of 2D
nanomaterials. In this study, we aimed to use fibroins as a molecular scaffold and evaluated theself-assembly of fibroin on the surface of 2D materials.
Fibroin was produced by genetically modified bacteria [1]. Substrates of graphite and MoS2
were exfoliated by the mechanical exfoliation method and transferred onto silicon wafers. 50
PL of aqueous fibroin solution dissolved in MilliQ water or phosphate-buffer (PB) was dropped
onto the substrate and allowed to stand at room temperature for 1 hour. Then, the aqueous
solution was blown off by nitrogen gas and vacuum-dried overnight. The surface morphology
of fibroins was then evaluated at the nanoscale using atomic force microscopy (AFM). We
evaluated both substrates prepared with fibroin solutions in water and PB.
Figure 1 shows the AFM images of the self-assembled structures of fibroin when using 0.5
and 20 Pg / mL of fibroin solution. From
the AFM images, the structure wasobserved to be linear. Also, the thickness ofthe film was found to be uniform, about 1.5
nm. Uniform films were formed in bothpure water and PB as well, and the coverageincreased with increasing concentration.
Besides, when the washing resistance waschecked using pure water and PB solution Fig. 1 AFM images of silk fibroin with 0.5 Pg / mL pureunder the condition of high coverage, it waswater (left) and 20 Pg / mL PB (right). Image size is 2x2 Pm
found that there was no significant change
in the coverage in both cases. Thus, fibroin is expected to be one of the candidates as amolecular scaffold for future biosensor applications using 2D nanomaterials.
[1] Magaz, Adrián, et al. Advanced healthcare materials, 7.23 (2018): 1800308.
Corresponding Author: Y. Hayamizu
Tel: +81-3-5734-3651
       - 52 -

1P-8
Evaluating the degree of unintentional dopingin CVD-grown MoS2 monolayer‫ۑ‬Hibiki Naito1, Yusuke Nakanishi1, Hong En Lim1, Yoshiyuki Nonoguchi2,
Takahiko Endo1, Kenji Watanabe3, Takashi Taniguchi3, and Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan
3
National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

2

Monolayer MoS2 has been studied intensively because of its superior semiconducting
properties and excitonic optical responses. Generally, monolayer MoS2 is known to behave as
an n-type semiconductor [1], due to the unintentional electron doping, which probably causedby the presence of lattice defects such as sulfur vacancies [2]. To explore the intrinsic physicalproperties and their potential in electronic devices, it is essential to develop a sophisticatedgrowth technique that produces high quality samples with suppressed unintentional doping. For
this purpose, we have investigated the growth and optical properties of various TMDC
monolayers grown by chemical vapor deposition (CVD) [3]. However, it is still difficult toevaluate the unintentional doping of as-grown samples.
In this work, we have investigated the degree of electron doping for CVD-grown monolayer
MoS2 by studying its photoluminescence (PL) after chemical de-doping treatments. The
samples were grown on SiO2, sapphire, and hBN surfaces by CVD. Electron de-doping was
conducted by spin-coating the butanol solution of different AgTFSI concentrations on thesamples [4]. For monolayer MoS2 grown on SiO2 and sapphire surfaces, a blue shift and PL
intensity increase were observed with the increase of AgTFSI concentration from 0.5 to 1 mM.
In contrast, for the MoS2 grown on hBN, the PL intensity remains unchanged up to 0.2 mM,
but decreases with a concentration beyond. A longer PL lifetime (~150 ps) is observed in theas-grown MoS2 on hBN compared to the on SiO2. These results indicate that the unintentional
doping of MoS2 can be suppressed by selecting appropriate growth substrate. The present
results provide a basis for the growth of high-quality samples and understanding the intrinsic
optical properties of TMDC atomic layers.

Fig.1. PL spectra of the CVD-grown monolayer MoS2 synthesized on (a) SiO2/Si and (b) hBN before and after
doping with 1 mM AgTFSI solution. (c) Time-resolved PL decay profiles of the as-grown monolayer MoS2 on
SiO2 and on hBN.
[1] B. Radisavljevic et al., Nat. Nanotechnol 6,147–150 (2011) [2] Wu Zhou et al., Nano Lett 13,2615–2622 (2013)[3]Y. Kobayashi et al., ACS Nano 13,7527–7535 (2019) [4]Y. Nonoguchi et al., Sci. Tech. Adv. Mater. 19,581–
587(2018)
Corresponding Author: Y. Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 53 -

1P-9
Zeeman-type spin-orbit interaction induced Ising ferromagnetismat a van der Waals interface
Hideki Matsuoka,1† Masaki Nakano,1,2 Stewart Edward Barnes,3 Jun'ichi Ieda,4 Sadamichi
Maekawa,2,5 Mohammad Saeed Bahramy,1‡ Bruno Kenichi Saika,1 Yukiharu Takeda,6 Hiroki
Wadati,7 Yue Wang,1 Satoshi Yoshida,1 Kyoko Ishizaka,1,2 Yoshihiro Iwasa,1,2
1

Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo
2
RIKEN Center for Emergent Matter Science (CEMS)
3
Department of Physics, University of Miami
4
Advanced Science Research Center, Japan Atomic Energy Agency
5
Kavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences
6
Materials Sciences Research Center, Japan Atomic Energy Agency
7
Graduate School of Material Science, University of Hyogo†Present address: RIKEN Center for Emergent Matter Science (CEMS)‡Present address: School of Physics and Astronomy, University of Manchester

A van der Waals (vdW) heterostructure provides an indispensable material platform inmodern condensed-matter researches. There, weak interlayer bonding nature ensures formationof an atomically abrupt heterointerface beyond fundamental constraint imposed by lattice
matching condition, while strong electronic coupling enables creation of an emergent electronic
ground state that is missing in individual materials. The most studies on the vdW
heterostructures have been made by the top-down approach, exfoliation, pick-up, and drytransfer. On the other hand, the bottom-up approach by MBE has remained almost totally
undeveloped, probably due to difficulties in fabrication of high-enough quality samples.
However, MBE should enable fabrication of a few layer samples even for hardly-cleavablematerials as well as thermally-metastable compounds, and therefore, the MBE-based approachshould be in principle extremely powerful and important for broadening the scope of vdW
heterostructures.
Here we fabricated vdW heterostructures by MBE, where a new type of 2D magnet,
vanadium selenide epitaxial thin film1, was incorporated. The result demonstrates a new typeof magnetic proximity effect mediated by Zeeman spin-orbit interaction of NbSe2 across thevdW interface, which significantly impacts the magnetic properties of a neighboring 2D
ferromagnet. In the presentation, we will show transport properties of those magnetic
heterostructures, and discuss the interface proximity effect on 2D magnetism.
[1] M. Nakano et al, Nano Lett. 12, 8806-8810 (2019).

Fig. 1. The crystal structures for NbSe2 (top) andV5Se8 (bottom).

Fig. 2. The schematic of spin splitting bands in NbSe2(top) and the ferromagnetism in V5Se8 (bottom).

- 54 -

1P-10Fabrication and transport properties of PN diodes
based on chemically-doped few-layer WSe2
○Shunta Suzuki1, Hiroto Ogura1, Yusuke Nakanishi1, Hong En Lim1, Takahiko Endo1,
Yoshiyuki Nonoguchi2, Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto, 606-8585

Atomically-thin transition metal dichalcogenides (TMDCs) have attracted attention because
their superior electrical properties and potential applications in electronics. In particular,
TMDC-based PN junctions are expected to be useful for future light emitting devices andtunneling field effect transistors. Among the various reported techniques, chemical doping
provides a facile way to fabricate a PN junction on a single TMDC layer. For example, such
TMDC-based PN junction was realized by treating WSe2 with diazonium salt anddiethylenetriamine [1]. As high doping efficiency and long-term stability are oftentimes
concerned in these chemically treated devices, we recently found that KOH and benzo-18crown,
an n-type dopant, is a well-match to serve the above purposes [3]. In this study, we havefabricated the PN diodes based on few-layer WSe2 using crown ether and AgTFSI as dopants
and have investigated their transport properties.
Few-layer WSe2 was grown on Si/SiO2 substrates using chemical vapor deposition (CVD).
In/Au electrodes were then deposited on the sample to fabricate the devices. Electron and hole
doping of WSe2 was conducted by spin coating of a solution of KOH and benzo-18crown and
AgTFSI [3,4], respectively. Id-Vsd curves show that both dopants can effectively increaseelectrical conductivity of the WSe2 devices even in air, and carrier types of each device areconfirmed by gate voltage dependence (Fig.1a). A rectification property is observed for the
WSe2 grain which was treated in parts with these dopants (Fig. 1b,c), implying the formationof a PN junction. Detailed fabrication process and transport properties of the devices will befurther discussed in this presentation.

Fig.1 (a) Id-Vsd curves of the p- and n-type doped WSe2 device fabricated using AgTFSI and KOH & Benzo18crown, respectively. (b) Schematic and optical images and (c) Id-Vsd curve of a WSe2 PN diode created with the
dopants used in (a).
[1] H. G. Ji et al. Adv. Mater., 31, 1903613 (2019). [2] Y. Nonoguchi et al. Adv. Funct. Mater., 26, 3021 (2016).
[3] H. Ogura et al. 60th FNTG symposium. [4] B. Xu et al. ChemSusChem, 7, 3252 (2014).
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp- 55 -

1P-11Synthesis and Characterization of Lithium-Ion-Encapsulated[70]Fullerene Li+@C70: A New Ionic Endohedral Fullerene○Daiki Kitabatake,1 Hiroshi Ueno,1,2 Kazuhiko Kawachi,3,4
Yasuhiko Kasama,3,4 Shinobu Aoyagi,5 Keijiro Ohshimo,1 Fuminori Misaizu1,4
12

Department of Chemistry, Graduate School of Science, Tohoku University

The Frontier Research Institute for Interdisciplinary Sciences, Tohoku University
3
Idea International Co. Ltd.
4
New Industry Creation Hatchery Center, Tohoku University
5

Department of Information and Basic Science, Nagoya City University

Inserting a small chemical species into fullerenes is a fascinating method to endow
them with unique characteristic properties. Previously, a powerful method to access alkali
metal encapsulated fullerenes, so-called “plasma implantation”, was developed, whichenabled us to achieve scalable synthesis of lithium-ion encapsulated [60]fullerene
Li+@C60 X㸫, a stable ionic form of lithium-encapsulated fullerene.[1] In addition to thestudy of the properties of Li+@C60 arising from its ionic nature, it is important to unveil
those of other “metal-ion-encapsulated” fullerenes.[2]In this work, we synthesized lithium-ion-encapsulated [70]fullerene (Li+@C70) as PF6‒
and TFSI‒ (TFSI=bis(trifluoromethanesulfonyl)imide) salts using our improved plasma
shower method followed by previously developed oxidative purification process. 7Li, 13C,
and 19F NMR spectra clearly confirmed the encapsulation of Li+ in defectless C70 cageand its diamagnetic ion-pair structure with the TFSI anion (Fig. 1). Further structural
information and basic properties of the novel material will be presented at the symposium.

Fig. 1. (a) 7Li, (b) 13C, (c) 19F NMR spectra of Li+@C70 TFSI− measured in CD2Cl2. LiCl/D2O (0 ppm)
and C6H5CF3/CDCl3 (−62.61 ppm) were used as external standards for 7Li and 19F NMR, respectively.
[1] Aoyagi, S. et al. Nature Chem. 2010, 2, 678.
[2] Matsuo, Y. et al. Endohedral Lithium-Containing Fullerenes: Preparation, Derivatization, andApplication; Springer: Singapore, 2017.
Corresponding Author: H. Ueno, Tel: +81-22-795-7645, E-mail: hiroshi.ueno.d5@tohoku.ac.jp- 56 -

1P-12Growth mechanism and handedness relation of
one-dimensional van der Waals heterostructures○Yongjia Zheng1, Akihito Kumamoto2, Rong Xiang1, Kaoru Hisama1, Keigo Otsuka1, Yuta Sato3,
Taiki Inoue1,7, Shohei Chiashi1, Daiming Tang4, Qiang Zhang5, Anton Anisimov6, Esko
Kauppinen5, Kazu Suenaga8, Yuichiro Ikuhara2, Shigeo Maruyama1
1 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2 Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656, Japan
3 Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),

Tsukuba 305-8565, Japan
4 International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science(NIMS), Namiki 1-1, Tsukuba 3050044, Japan
5 Department of Applied Physics, Aalto University School of Science, Espoo 15100, FI-00076 Aalto, Finland
6 Canatu Ltd., Helsinki FIϋ00390, Finland
7 Department of Applied Physics, Osaka University, Osaka 565-0871, Japan
8 The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Mihogaoka 8-1, Ibaraki,

Osaka 567-0047, Japan

Recently, we presented one-dimensional (1D) van der Waals (vdW) heterostructure that
includes single-walled carbon nanotubes (SWCNTs), boron nitride nanotubes (BNNTs) andmolybdenum disulfide (MoS2) [1]. The shell-by-shell growth of this heteronanotube is different
from conventional growth of 1D homo-material nanotubes where multiple walls are formed
simultaneously from a nanoparticle. Therefore, nucleation and crystal growth behaviors on thesehighly curved surfaces are of fundamental research interest. Here we present a comprehensive andthorough characterization on the formation process of BN layer on SWCNT surface. This isachieved by combining transmission electron microscopy (TEM) approach with the direct growthof 1D vdW heterostructures on TEM grid. This combination allows heterostructures to keep in themost intrinsic morphology, and many structure details can be clearly visualized. Furthermore, theircrystal relationship and handedness correlation were also investigated.

Fig. 1: (a) Atomic model of a BN coated bundle consisting of two SWCNTs, and its cross-section
view. (b) TEM image for this bundle situation. (c) Atomic model of a BN coated SWCNT on a flat
substrate as the second situation. (d) Specimen based on the second situation made by a focused-ionbeam (FIB) system for TEM characterization. (e) Schematic illustration of identifying the handednessof inner SWCNT or outer BNNT under TEM measurement. (f) representative TEM images of three
SWCNT-BNNT heterostructures having different handedness combinations.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421,[1] R. Xiang et al., Science, 367, 537 (2020).

Fax: +81-3-5841-6983,
E-mail: maruyama@photon.t.u -tokyo.ac.jp- 57 -

1P-13
Effect of hydrogen on the microplasma synthesis of carbon nanotubes○Takashi Tsuji1, Jaeho Kim2, Hajime Sakakita2, Yoshiki Shimizu3,4, Guohai Chen1, Kenji
Hata1, Don N. Futaba1, Shunsuke Sakurai1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8565, Japan
2
Innovative Plasma Processing Group, Research Institute for Advanced electronics andPhotonics, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki
305-8568, Japan
3
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan
4
AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory(OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology(AIST), Kashiwa, Chiba 227-8589, Japan
The importance of hydrogen for the synthesis of carbon nanotubes (CNTs) is well known as
it has been well documented in the literature. Its role spans the reduction and formation of thecatalyst nanoparticle as well as additional functions, such as etching of disordered carbon anddefect healing, during the graphitic precipitation process. Across the diverse techniques
approaches to synthesize CNTs, hydrogen has been reported to play slightly different roles inpromoting, or inhibiting, growth.
Recently, we have reported a mini-synthesis system composed of a microplasma reactor as
the primary energy source [1, 2]. This reactor was shown to efficiently grow highly crystalline
single and double wall CNTs at exceptionally high growth rates. Within this approach, we also
found hydrogen to be critically important in increasing the yield and purity of the growth CNTs,
but our investigation revealed that hydrogen served a different role. As the hydrogen content
increased from zero to 5%, visible changes in the color and shape of the plasma were apparent.
Optical emission spectroscopy of the plasma demonstrated that hydrogen increased thetemperature through dissociation and recombination induced from the absorption of the plasmaenergy. In doing so, hydrogen essentially shifted the decomposition of the reactant gases froma solely electron-driven process to one including a thermally driven component. As such, this
supported the appropriate order of reactions which are necessary to support CNT synthesis,(specifically, catalyst precursor decomposition, catalyst nanoparticle formation, carbon
feedstock decomposition, and CNT nucleation and growth) and led to an increase in CNT
growth and reduced disordered carbon particles. Combined with transmission electron
microscopy evaluation, we propose a model describing the driving mechanism of our minisynthesis system. These results not only indicate the multifaceted role which hydrogen cancontribute to the synthesis of CNTs, but also that while electron-driven processes can effectively
dissociate reactance processes, they do not necessarily support the necessary series of reactions
for CNT synthesis for mixed (catalyst and carbon) precursors.
[1] T. Tsuji et al. Abstracts of the 59th Fullerene-Nanotubes-Graphene General Symposium (2020).
[2] T. Tsuji et al. Carbon 173, 448 (2021).
Corresponding Author: T. Tsuji
Tel: +81-29-861-0254, Fax: +81-29-861-4851
E-mail: takashi.tsuji@aist.go.jp- 58 -

1P-14

Thermal conductivity of C60 encapsulated single-walled carbon
nanotubes thin films
Rikuto Abe, Kan Ueji, Yohei Yomogida, Kazuhiro Yanagi
&')#$)%,((%!,%)'%&%")$$+'(),%!,% &$

Encapsulation of molecules and inorganic materials into the hollow core of single walledcarbon nanotubes (SWCNTs) is one of techniques to tune the physical properties of
SWCNTs, and to fabricate novel one-dimensional materials. Regarding the control ofthermal conductivity, N, of SWCNTs by C60 encapsulation, previous studies reported thatthe encapsulation of C60 into SWCNTs slightly enhanced the N in their bucky paper form[1], but a recent study revealed that in a single bundle of SWCNTs the reduction of N ina single bundle by encapsulation of C60 is observed due to the formation of phononic bandgap [2]. Thus, whether the encapsulation of C60 can enhance or reduce the N is not clear.
In this study, we measured the N of SWCNT thin films with thickness of approximately
100 nm, and evaluated the influence of the encapsulation of C60 on the thin film thermal
conductivity. We prepared C60@SWCNTs by a conventional vapor phase method [3], andthen we measured the thermal conductivity of thin films of C60@SWCNTs by timedomain thermal reflectance (TDTR) method at room temperature [4]. Fig. 1 shows the
TDTR signals of SWCNTs and C60@SWCNT thinfilms. The TDTR signals were almost identicalbetween SWCNTs with and without C60, indicatingthat no significant changes on thermal flow. The N
values of SWCNT and C60@SWCNTs are determined
to be (2.7ʸ0.3)ʹ10-1 and (2.0ʸ0.3)ʹ10-1 W/mK,
respectively. There was a slight decrease of N byencapsulation of C60, but not so significant, indicating
the thermal boundary resistance between tube-tube
contacts would dominantly contribute the heat flow inthe thin films.

Fig. 1 TDTR signals of thin films of
SWCNTs and C60@SWCNTs[1] Vavro et al., Appl. Phys. Lett. 80, 1450 (2002) [2] Kodama et al., Nat materials.,10,1038 (2017)[3] M. Kawai et al. J.Am.Chem.Soc., 134, 9545 (2012) [4] Ueji et al., JJAP 58, 128006 (2019)
%''(&%$$ *)%' $#" ,$!-*'% )#* &- 59 -

1P-15
Thermal boundary resistance of aligned films of single-walled carbon
nanotube using time-domain thermoreflectance method○Atsuhiro Katagiri1, Kan Ueji1, Yuya Matsuoka1, Junko Eda1, Hitomi Okubo1, Yohei
Yomogida1, Junichiro Kono2 Takashi Yagi3and Kazuhiro Yanagi1
1Department of physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, U.S.A.
3
National Metrology Institute of Japan, National Institute of Advanced Industrial Science andTechnology, Tsukuba, Ibaraki, 305-8563, Japan

2



Understanding of thermal flow through inter-tube junctions between single-walled carbon
nanotube (SWCNT) is important to obtain optimal thermal conductivity for thin-film device
using SWCNT. Several theoretical simulations mentioned that a thermal resistance of inter-tube
junction depends on the angle between the axes of the contacted nanotubes [1-2], and then it isrequired to experimentally clarify such characters for the thermal managements of the SWCNT
thin films. Recently, a method to fabricate aligned SWCNT
afilms with large area has been developed. In this study, weinvestigate the effect of the stacking angle on a thermalboundary resistance between two aligned SWCNT films by atime-domain thermoreflectance (TDTR) method.
First, we prepare a membrane where the grooved structures
were artificially formed, and then we fabricated the aligned
SWCNT thin-film by filtration under vacuum controlled
system. [3] During the filtration, the filtration area wascontrolled by Si rubber. This technique enables us to preparebuniform, thick and aligned thin film with good reproducibility(Figure a). Finally, the aligned film was transferred andstacked onto the Au substrate with controlled angles between
the aligned direction of the films, and then we evaluated thethermal boundary resistance at the interfaces between thestacked films by TDTR. Figure b shows experimental TDTR
signals for the samples (1-layer, 2-layer with different stacking
angles). One dimensional heat conduction model suggested
that the thermal boundary resistance at the interface where thestacking angle is 90° is higher than that at the interface where
Figure: AFM images of SWCNT film
its angle is 0°. The detailed of the thermal boundary resistance
prepared using the Si rubber (a) andwill be presented in the poster.
angle dependence of TDTR signal

References: [1] Evans et al. Appl. Phys. lett. 100, 261908 (2012)[2] Hu et al. J. Appl. Phys. 114, 224308 (2013)
Corresponding Author: K. Yanagi

Which measure 2layer SWCNT (b).

[3] He et al. Nat. Nanotechnol. 11, 1 (2016)

Tel: +81-42-677-2809- 60 -

E-mail: yanagi-kazuhiro@tmu.ac.jp

1P-16
Local Grafting of Polymer Radical on the Surface of Single-Walled Carbon
Nanotubes and the Enhanced Photoluminescence in the Near-Infrared Region○Yukiko Nagai1, Kenta Nakamura1, Tsuyohiko Fujigaya1,2,3
1

Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka,
Fukuoka 819-0395, Japan. 2WPI I2CNER, Kyushu University. 3Center for Molecular Systems,
Kyushu University.

Photoluminescence (PL) of single-walled carbon nanotubes (SWCNTs) in the nearinfrared (NIR) region (E11 emission) is attractive, especially for bioimaging and biosensing invivo. In this study, we achieved brighter NIR emission of SWCNTs compared with E11 emission
by polymer grafting on the SWCNT surface, which generates emissive sp3 defects through local
chemical functionalization of the polymer radical in the interior of surfactant (SDS)-dispersed
SWCNTs (Fig. 1) [1]. The locally functionalized SWCNTs (lf-SWCNTs) show new PL
assignable to E11* and E112* emission at longer wavelength (>1100 nm) than E11 emission(<1100 nm) [2], which is preferable to avoid the strong autofluorescence from the body.

Fig. 1 Scheme of synthesis of lf-SWCNTs by polymer grafting.

Recently, we have developed a unique emulsion polymerization method to coat
SWCNT surface with a cross-linked polymer by radical polymerization around the SWCNTs
called carbon nanotube (CNT) micelle polymerization [3]. It was found that the radical initiatorconcentration and polymerization time strongly affected the E11* and E112* emission intensities,
and as polymerization progresses, E11* and E112* emission became brighter, while E11 emission
became darker (Fig. 2). At the optimum condition, the E11* emission intensity was about 6
times brighter than the initial E11 emission.

Fig. 2 Two-dimensional PL counterplots of SWCNTs after CNT micelle polymerization using (a) 0 mM, (b) 3.50
mM and (c) 3.72 mM of radical initiator.
[1] Y. Nagai and T. Fujigaya et al., ACS Appl. Nano Mater. 3, 8840 (2020).
[2] Y. Wang et al., Nat. Chem. 5,
840 (2013).
T. Fujigaya et al., RSC Adv. 4, 63182014.
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842, E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 61 -

1P-17
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1P-18
Effects of deposition conditions on the states of Pt nanoparticles on carbon
materials and their electrocatalytic properties toward methanol oxidation
and CO poisoning○Yuho Abe1 and Hironori Ogata1,2
1 Department of Chemical Science and Technology, Hosei University
2 Research Center for Micro-Nano Technology, Hosei University

E-mail: hogata@hosei.ac.jp
A direct methanol fuel cells(DMFCs), which is a type of solid oxide fuel cell(SOFC), is
expected as a next generation energy supply source. DMFCs are one of the most promisingtransportable power sources which can be used in mobiles, laptops, and small power generation.
The basic operation principle of DMFCs involves methanol oxidation and oxygen reduction on
the precious metal catalysts, which are carbon supports as well as catalyst particle size andshape plays a dominant role in the electrochemical performance for fuel cells. The mostimportant advantage of DMFCs over other types of fuel cells is that methanol can integrate
effectively with transmission and distribution systems that already exist. However, there aretechnological challenges for the commercialization of DMFCs that remain unsolved [1,2,3].
The basic operation principle of DMFCs involves methanol oxidation and oxygen reduction on
the precious metal catalysts, which are loaded on the support surfaces.As is well-known, thedispersion of Pt-based nanoparticles on carbon supports as well as catalyst particle size andshape plays a dominant role in the electrochemical performance for fuel cells. We have exploredthe electrocatalytic properties of Pt-based nanoparticles supported on the carbon materials by
one-step electrodeposition [4]. In this study, we investigated CO stripping in addition to theoperations performed in the past. In the liquid phase reduction method, the concentration waschanged, and in the electrodeposition method, the effect of support due to changes in the applied
voltage and application time was investigated. Especially, we selected the electrodeposition
method and the liquid phase reduction method as the loading of Pt nanoparticles on single
walled carbon nanotubes (SWNTs) composite materials and compared the dispersion state of
Pt nanoparticles on the nanocarbon materials and the oxygen reduction reaction activities. The
surface state of SWNTs, the loading state of Pt nanoparticles and the catalytic properties ofelectrode were investigated using TEM, XPS, and cyclic voltammogram (CV).
The detailed results will be presented.
References:[1] N. Pongpichyakul et al., Springer Nature, 50, 51-62 (2019).
[2] S.K.Kamarudin et al., Applied Catalysis B: Environmental, Elsevier, 262, 118217 (2019)[3] I. Martinalou et al., International Journal of Hydrogen Energy, Elsevier, 34, 6902-6916 (2009)[4] Zhipeng Wang, Mao Shoji and Hironori Ogata, Appl. Surf. Sci, 259, 219-224 (2012).
Corresponding Author: H.Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 63 -

1P-19

Scattering parameter analysis of self-aligned flexible carbon nanotube
thin-film transistors○Saya Ishimaru1, Taiga Kashima1, Hiromichi Kataura2, and Yutaka Ohno1,3
1

2

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology 305-8565, Japan
3
Institute of Material and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan

Scattering- (S-) parameter analysis is powerful technique to characterize the operation
speed of transistors and to clarify the causes of excess delay. We apply S-parameter analysis
to the self-aligned flexible CNT TFTs [1] to show the effect of the self-aligned structure on
the operation speed enhancement. The equivalent circuit analysis is also carried out theextract device delay parameters.
We fabricated CNT TFTs with a bottom gate structure by the (a) self-align and (b)conventional processes (Fig. 1). Semiconducting CNTs purified by the gel-chromatography
were used as the channel. S-parameter measurements were carried out by using a vector
network analyzer (Keysight, E5061B) at frequencies up to 10 MHz. The open and throughcalibrations were performed in order to remove the impact of the parasitics associated withthe measurement setup and contact pads.
Figure 2 shows the current gain cutoff frequencies (fT) and maximum oscillation
frequencies (fmax) evaluated from S-parameters various channel length (Lch) at VDS of -5 V
and VGS of -3 V. The fT and fmax were enhanced by a factor of about 10 by introducing theself-aligned structure. High fT and fmax over 10 MHz were obtained for the self-aligned deviceof Lch = 5 Pm. The equivalent circuit analysis based on the measured S-parameters showsthat the contact resistance at the source and drain electrodes becomes the dominant cause ofdelay with reducing Lch less than 10 Pm.
[1] S. Ishimaru et al., The 59th Fullerenes-Nanotubes-Graphene General Symposium, 3P-16

fmax (Hz)10M

Self-align1M

Conventional
100k
100k

1M

fT (Hz)Fig. 2 fmax versus fT.
Fig.1 Device structure.
(a) Self-aligned, (b) conventional.
Corresponding Author: Yutaka Ohno, Phone: +81-52-789-5387,E-mail: yohno@nagoya-u.jp- 64 -Lch (µm)
5
10
20
50
100

10M

1P-20One-dimensional growth of WS2 by chemical vapor deposition○Kazuma Shimogami1, Misaki Kishibuchi1, Hirotaka Inoue1, Liu Zheng2, Yasumitsu Miyata3,
Yasuhiko Hayashi1, Hiroo Suzuki1
1Graduate School of Natural Science and Technology, Okayama University, Okayama

700-8530, Japan
2Innovative Functional Materials Research Institute, National Institute of Advanced Industrial

Science and Technology (AIST), Tsukuba 305-8565, Japan
3Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan

Transition metal dichalcogenides (TMDCs) are potential candidates for the
next-generation optoelectronics device such as photodetectors, light-emitting diodes, andsolar cells due to its superior optoelectronic properties and flexibility. The optoelectronic
properties of TMDCs are sensitive to their crystal structures such as number of layers, crystal
phase, defect density, and presence of edges. Because the dimension of the crystal is also an
impactful factor, the dimension control from 3D to 2D (multilayer to monolayer) has beenstudied well, showing the significant increase of photoluminescence (PL) intensity. In contrast
to such studies from 3D to 2D, much less study has been conducted on downscaling from 2D
to 1D. The structure control from 2D to 1D is possible to allow us to investigate novel
optoelectronic physics and applications derived from quantum confinement effect andpresence of edges.
The two strategies for the synthesis of
1D-TMDC can be considered. One is a
top-down, and the other is a bottom-up
process. The top-down approach by theconventional lithography technique isfrequently used, but there is a great advantage
in the bottom-up process in terms of thecleanness of the surface and edge.
Fig. 1. (a) Optical microscope image ofIn this research, we have investigated the 1D-WS2. (b) PL spectra of 1D- and 2D-WS2.
growth of 1D-WS2 by chemical vapor
deposition (CVD), which is a bottom-up process. The cold-wall CVD system with the infrared
gold image furnace was established for TMDC growth. The solution of Na2WO3 was
employed as a W source for WS2 and deposited on SiO2/Si substrates. The vapor of(t-C4H9)2S2 was introduced to a CVD chamber as an S source. From the systematicinvestigation of CVD growth, we found that the fiber-like materials can be grown with arelatively low (t-C4H9)2S2 supply (Fig. 1(a)). The atomic force microscopy (AFM) revealed
that the fibers are around 3 nm in thickness, which is relatively thicker than monolayer WS2.
The fibers showed both almost the same Raman and PL peaks as monolayer WS2 (Fig. 1(b)).
The transmission electron microscopy (TEM) observations revealed the presence of WxOy
nanowires in the sample. These results suggest that the 1D-WS2 could be formed on the
CVD-grown WxOy nanowire.
Corresponding Author: H. Suzuki
Tel: +81-86-251-8133
E-mail: hiroo.suzuki@okayama-u.ac.jp- 65 -

1P-21Gate-turning of carrier doping by oxygen molecule adsorption on MoS2
഼T. Yoshida1, K. Takai1,2
1Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan
2

Graduate school of Science and Engineering, Hosei University, Tokyo 184-8584, Japan

2D-materials are susceptible to adsorbents from the ambient environment because all
constituent atoms are present on the surface. For example, MoS2, which is one of the 2Dmaterials is known to be hole-doped when oxygen molecules are adsorbed [1]. There are two
types of adsorption of molecules: physical adsorption and chemisorption. In the case ofchemisorption involving charge transfer, the adsorption rate differs depending on the charge
state of the host substance. Previous studies have shown that upshifting the Fermi energy (EF)of graphene increases the characteristic rate of charge transfer in oxygen molecule adsorption[2]. In this study, the EF of MoS2 was modulated by applying gate voltage (VG) during oxygen
exposure, and the adsorption characteristics were investigated by the electron transition.
MoS2-FET was fabricated after mechanical exfoliation of 1L-sample on a 285 nm SiO2 / Si
substrate.The electric conductivity was measured after exposure of oxygen gas applying VG.
Fig. 1 shows the VG dependence of the source-drain current ISD when exposed to oxygen (VG= 0 V). Hole doping by oxygen molecule adsorption is progresses as the exposure time (t)increases. Fig. 2 shows the t dependence of the shift of threshold voltage ǼVTH from that at t
= 0 when exposed to oxygen gas at VG = -60, 0, and +60 V. The hole doping by oxygen gas
adsorption gradually shows a tendency to saturate. In addition, the relaxation time when VG =+60 V was applied and exposed to oxygen gas was shorter than that of VG = -60 V. These results
indicate that the adsorption of oxygen molecules depends on the charge state of MoS2 as thehost subsutance.
[1] Y. Minakawa, T. Umehara, and K. Takai, The 58th FNTG (2020),[2] Y. Sato, K. Takai, and T. Enoki, Nano Lett., 11 , 8 (2011),

0.8

10

0s
15 s

8

0V

6

-60 V

120 s
VSD = 0.1 VǼVTH (V)ISD (ȣ
ȣA)

0.6

+60 V

0.4

0.2

4
2
0

0.0
-60

-30

0
VG (V)

30

0

60

50

100

150

Time (s)Fig. 2 Exposure time dependence of ǼVTHFig. 1 VG dependence of ISD for 100Pa O2 adsorptionCorresponding Author: Kazuyuki Takai
Tel: +81-42-387-6138, Fax: +81-42-387-7002
E-mail: takai@hosei. ac. jp- 66 -

1P-22
Correlation between the amount of functional groups in graphene oxide
and the catalytic activity in reduction of nitrobenzene○Riku Kondo 1, Yoshiaki Matsuo 2, Kazuyuki Takai1
1Dept. of Appl. Chem., Hosei Univ., 2 Dept. of Appl. Chem., Univ. of Hyogo.

Graphene oxide (GO) has oxygen-containing functional groups such as epoxy-, carboxyl- andhydroxyl groups. GO is mainly synthesized by the Brodie (BGO) and the Hummers (HGO)
methods [1, 2] in which different oxidizing agents are used. Our group found that the ratio of
quantities of each kinds of oxygen-containing functional groups depends on the oxidation
methods greatly, suggesting that the catalytic activity of GO depends on the synthesis methodsof GO [3]. Indeed, we reported HGO exhibits the higher catalysis in a dehydrogenative coupling
reaction to obtain N-benzylidenebenzylamine from benzylamine [4], although GO could
partially acts as an oxidant rather than a catalyst in the reaction. Recently, a catalysis of GO in
the reduction of nitrobenzene was reported [5].
In this study, we precisely determined the quantity of each acidic functional groups in HGO
and BGO by Boehm titration and investigated the correlation between the amount of functionalgroups in graphene oxide and the catalytic activity in reduction reaction of nitrobenzene.
GO was synthesized by oxidation of natural graphite using concentrated sulfuric acid andpotassium permanganate followed by the modified Hummers method [2], and using potassium
chlorate and fuming nitric acid according to the Brodie method. The Boehm method based on
neutralization titration was used to determine the quantity of acidic functional groups.
Hydrogenation reaction of nitrobenzene was performed by adding BGO or HGO sample as acatalyst to nitrobenzene and heating at 60 °C for 2 h to synthesize aniline.
The amount of acidic functional groups of different strengths in GO calculated from theamount of HCl (aq) added until reaching the equivalent point obtained from the tiltlasions. The
total amount of acidic functional groups, strongly, moderately acidic groups in HGO and BGO
are 9 mEq/g and 5 mEq/g, 6 mEq/g and 3 mEq/g, 3 mEq/g and 2 mEq/g, respectively. Almost
no weak acid group were found in both of HGO and BGO.
In the hydrogenation reaction of
Table 1 Reduction of Nitrobenzene with HGO and BGO
nitrobenzene, the yield was
NitroH2 gas
Relative
about 5 times larger for HGO
Temperature
Time
Conversion
pressure
yield
catalyst than that for BGO Catalyst benzene
(℃)(h)
rate (%)
catalyst. HGO has more total(mmol)(MPa)(%)
acidic functional groups than
-0.5
130
1.5
2
0
99.9
that of BGO, as well as the
0.5
130
1.5
2
1
99.8
more localized states at the BGO
Fermi level [3]. Both of them BGO
0.5
130
1.5
19
21
99.5
would be responsible for the
HGO
0.5
130
1.5
2
5
99.2
higher catalysis of HGO.
[1] B. C. Brodie, Philos. Trans. R. Soc. London, 149, 249–259 (1859).
[2] W.S. Hummers et al, J. Am. Chem. Soc. 80 1339-1339 (1958), [3] K.Tajima, et al., Polyhedron, 136, 155-158(2017), [4] R. Kondo FNTG Symposium (2020), [5] M. Ahmad, et al Org. Lett. 21, 8164-8168 (2019).
Corresponding Author: Kazuyuki TAKAI
E-mail: takai@hosei.ac.jp- 67 -

1P-23Comparison of light emission from different kinds of hBNs after UV or
thermal treatments○Yusuke Adachi, Kuniharu Takei, Takayuki Arie, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
Hexagonal boron nitride (hBN) is getting attention as an important component in the field of

quantum communication technology because it acts as single-photon emitters (SPEs). However,the light emission is not high enough to adopt in practical devices. Here, in improving theemission intensity of SPEs, we investigate the light emission from different kinds of hBNs
treated with thermal [1] or UV ozone[2] treatments.
Samples examined here are flakes-power, exfoliated frombulk crystal and CVD grown hBNs purchased from “2D
semiconductors, USA”. The samples are transferred on
SiO2/Si substrate. In the case of thermal treatment, the
50 μm
samples were annealed for 30 min at 700, 800, 850 or 900 ℃
in Ar gas at atmospheric pressure. For UV treatment, thesamples were first annealed at 120 ℃ followed by UV ozone
irradiation for 30, 45, 60 or 75 min.
For flakes-power hBN, we compare the thermal and UV
50 μm
ozone treatments. The photoluminescence (PL) of hBN
under the irradiation of LED light with the center wavelengthof 530 nm was brightest at 850℃ (Fig.1(a)) taken using thefluorescence microscope. In the case of UV treatment, The
PL intensity was brightest over 60 min treatment (Fig.1(b)).
Comparing Fig.1(a) with Fig.1(b), they show almost
equivalent emission intensities. The UV ozone treatment
without high temperature treatment is beneficial for the
fabrication of practical devices.
Next, we investigated the difference of kinds of hBNs
after UV ozone treatment for 60 min. The PL intensity of Fig.1: (a) PL image of the flakesCVD-hBN was highest. Figure 1(c) shows a PL spectrum power hBN in high-temperatureusing 532 nm laser from CVD-hBN measured at room annealing at 850℃ when irradiatedtemperature. The clear peak around 570 nm was observed 530 nm light. (b) PL image of hBN
in UV ozone treatment for 60
corresponding to the zero phonon line.[1] This implies that bulk
min. (c) The PL spectrum of CVD
the CVD-hBN has more appropriate defects for light hBN excited by 532 nm laser after
emission than that for other types.
UV ozone treatment for 60 min.
References[1] T. T. Tran et al., Nat. Nanotechnol. 11, 37 (2016).
[2] C. Li et al., Nanophotonics 8, 2049 (2019).
Corresponding Author: Y. Adachi
Tel: +81-72-254- 9261, E-mail: adachi-4@pe.osakafu-u.ac.jp- 68 -

1P-24
Vibrational Spectra of Nucleotides at the Au Cluster attached to graphene
nanopore in MD Simulation of a SERS Sensor○Mohd Aidil Amin Bin Mohd Nasir1, Tatiana Zolotoukhina1
1

Department of Mechanical Engineering, University of Toyama, Toyama 930-8555, Japan

Sensing and analysis of protein structure and DNA sequences and epigenetic modifications
are essential for the understanding of the mechanism of cell functions and the development ofdiseases. The surface-enhanced Raman scattering (SERS) nanoprobes have opened a way toidentify molecular structures in a label-free way and investigate mechanisms of interaction
with the environment in biomolecules with the high sensitivity and specificity of theirfingerprint-like spectra. As current Raman scanners rely on multiple spectra acquisitions, theuse of nanoparticle agglomerates provides sufficient enhancement for the single-molecule
measurements [1]. Development of the SERS spectroscopy promotes work on DNA andprotein identification at a single oligomer resolution and with respect to interactions [2-3].
The study of the vibrational spectra of the nucleotides in the dynamic interaction with the
Au nanoparticles (NP) located close to (grown on) graphene nanopore combines (1)translocation localization by graphene nanopore and (2) nucleotide interaction enhancement
by Au NP. The spectral maps of the nucleotides were obtained by molecular dynamics (MD)simulation with LJ interaction between components. The spectra of various bonds were
evaluated in reaction coordinates for DNA nucleotides and in Cartesian ones for Au NP.
Spectra at the interaction with the Au NP helps to select a transient COM velocity of
nucleotide passing along the cluster and at the edge of the graphene pore. We test thenucleotide-graphene-NP system to understand whether the LJ interaction with Au NP at thetranslocation time can influence the changes in the transient spectra calculated by MD. The
frequencies that can serve as markers of the corresponding Au – nucleotide interaction areevaluated.
The simulation methods can create spectral libraries for vibrations of molecular species vs.
different types of interaction to specify the interaction’s type and strength.
Au20 NP

Cytosine nucleotide, single C(2)-C(3) bond

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Fig1 Vibrational spectra of the tip atoms of Au20 nanoparticle and Cytosine C-C ring bond marked on the right panel. [1]L. M. Almehmadi, S. M. Curley, N. A. Tokranova, S. A. Tenenbaum & I. K. Lednev, Sci. Reports, 9, 12356 (2019).
[2 ]T. Zolotoukhina, M. Yamada1 and S. Iwakura., Proceedings of IECB2020, 035671 (2020)[3] D. Macdonald, E. Smith, K. Faulds, D. Graham, Analyst, 145, 1871-1877 (2020).
Corresponding Author: T. Zolotoukhina
Tel: +81-76-445-6739, Fax: +81-76-445-6739,

E-mail: zolotu@eng.u-toyama.ac.jp- 69 -

1P-25
HER catalytic performance of Mo2C/C composite films prepared by
microwave-plasma CVD method○Shunsuke Numata1 and Hironori Ogata1,2
1Department of Chemical Science and Technology, Hosei University
2
Research Center for Micro-Nano Technology, Hosei University

Electrocatalytic water splitting is one of the suitable methods for hydrogen production.
However, this process relies on the electrocatalysis of the hydrogen evolution reaction (HER).
It is well known that Pt-based electrocatalysts show high current density at low overvoltages
and are efficient HER electrocatalysts. However, since they are rare and expensive, transition
metal carbide (TMC) such as molybdenum carbide has been proposed as an alternative to Pt,
and much research has been done so far. It has been reported that the penetration of carbon
atoms into the transition metal lattice increases the density of d-band electrons at the Fermi
level, leading to Pt-like properties. In addition, it has been reported that HER and conductivity
are improved by synthesizing TMC using nanocarbon materials [1].
Microwave-plasma chemical vapor deposition (MPCVD) method is one of the methods thatuse plasma generated by microwave.
The MPCVD method has the advantages of high power density and controllable parameters.
Due to these advantages, it is possible to produce high quality molybdenum carbides. [2]In this study, we prepared Mo2C / C



䖃

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Fig. 1 C 1s XPS spectrum of prepared material[1] Dezhi Wang et al., ACS Sustainable Chem Eng, 6, 13995 (2018).
[2] Hongyang Zhao et al., Journal of Applied Physics, 123, 053301 (2018).
E-mail: hogata@hosei.ac.jp- 70 -

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reported at the meeting.

Corresponding Author: H. Ogata㻌䖃 
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composite films by directly laminating ananocarbon materials on a molybdenum
substrate by a microwave plasma chemical
vapor deposition (MPCVD) method andinvestigated the possibility of application to acatalyst electrode for HER. Fig. 1 shows theC 1s XPS spectrum of the fabricated material.
This result means that molybdenum carbide
and nanocarbon are produced. Detailed
experimental results about the performanceof the catalyst electrode for HER will be 

1P-26
Magnetizations and De Haas-van Alphen oscillations in the Dirac fermions○F. R. Pratama1, M. Shoufie Ukhtary1, Riichiro Saito1
1

Department of Physics, Tohoku University, Sendai 980-8578, Japan

Graphene and related two-dimensional (2D) materials are known to possess intrinsic orbital
diamagnetism (OD) [1, 2], which is originated from the coalescence of the Dirac fermions atthe valence bands to the zeroth Landau levels (LLs) in the presence of an external magnetic
field B. A method to calculate the OD χ is by applying the Euler-Maclaurin formula for thethermodynamic potential Ω and by using the relation χ=−(∂2Ω/∂2B)B=0, as employed by Landau[3] to show the OD in metals. In the context of the Dirac materials, the method is used to
calculate the Fermi energy dependence of χ in gapped graphene [4], MoS2 [5], and the Weyl
semimetals [6]. However, the magnetization M as a function of B and temperature T cannot becalculated by using the Euler-Maclaurin formula, because M=−(∂Ω/∂B) diverges due to theinfinite number of the LLs when we calculate Ω. If we consider only the LLs from theconduction bands, such divergence would not appear but it is not well-justified approximation.
In this study [7], we analytically calculate Ω(B,T)
for strong-B/low-T and weak-B/high-T limits withthe method of zeta function regularization, in order
to avoid the divergence in the expression ofM(B,T). Our formulas reproduce the experimental
observation of M of graphene as a function of B for
several values T [8], which was fitted into aLangevin function [8] (see Fig. 1). Moreover, we
generalize the result by including the effect of bandgap and impurity scattering on M and χ. We foundthat in the presence of impurity, χ of graphenefollows a scaling law. In the case of a gapped Diracfermions, a large band-gap in MoS2 gives a smaller
but more robust magnetization with respect of T and
impurity. In the doped systems, we show that the
opening of band-gap yields a decreasing frequency
and amplitude in the De Haas-van Alphen
oscillations at T=0 K.
[1] J. W. McClure, Phys. Rev. 104, 666 (1956).
[2] M. Sepioni et al., Phys. Rev. Lett. 105, 207205 (2010).
[3] L. Landau, Z. Phys. 64, 629 (1930).
[4] M. Koshino, T. Ando, Phys. Rev. B 81, 195431 (2010).
[5] T. Cai at al., Phys. Rev. B 88, 115140 (2013).
[6] M. Koshino, I. F. Hizbullah, Phys. Rev. B 93, 045201 (2016).
[7] F. R. Pratama, M. S. Ukhtary, R. Saito, arXiv:2101.01367 (2021).
[8] Z. Li et al., Phys. Rev. B 91, 094429 (2015).

Fig 1. Magnetization of graphene M asa function of B and T for (a) strongB/low-T and (b) weak-B/high-T limits.
The

analyticalformulaandtheLangevin fitting of the experiment
Corresponding Author: F. R. Pratama
E-mail: pratama@flex.phys.tohoku.ac.jp(from Ref. [8]) are depicted bysymbols and lines, respectively.

- 71 -

1P-27
Synthesis of WTe2 nanowires by tellurization of tungsten oxide nanowires
and origin of non-formation of tubular structure○Mai Nagano1, Yohei Yomogida1, Hiromu Hamasaki2, Kaori Hirahara2,3, Yasumitsu Miyata1,
Kazuhiro Yanagi1
123

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0372, Japan
Department of Mechanical Engineering, Osaka University, Suita, Osaka 565-0871, Japan

Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871,
Japan

Transition-metal dichalcogenides (TMDCs) MX2 (M = Mo, W, Nb; X = S, Se, Te) haveattracted much attention owing to their unique electronic and optical properties. TMDCs exhibit
various physical properties depending on the constituent elements and their nano-structures,such as nanotube and nanowire structures. Among the TMDCs family, WTe2 is a semi-metallic
and attracts a lot of interest due to its topological properties, but no nanotube structure of WTe2
has been reported. The physical properties of WTe2 strongly depend on the morphology and thenano-structure, and thus its control is important for both basic science and applications. Typicalmethods to control nano-structures of TMDC is the chalcogenization of metal oxide nanowire
precursors, which is used for nanotube synthesis [1]. However, successful report on nanotube
formation is limited to sulfurization and selenization [2,3], and it is not clear whether we canget nanotube structure through tellurization. In this study, we performed various conditions oftellurization and investigated the effect on morphology and nano-structure of tellurized samples .
First, we investigated how supply of chalcogen influences the structure and composition ofsynthesized products. The tungsten oxide nanowire precursors obtained by solvothermal
synthesis were used for tellurization. The nanowires were heated to 650-700 ˚C in Ar gas, andafter reaching set temperature, Te powder was heated in Ar/H2 gas to supply Te powder washeated at different temperatures (600, 620, 650, and 700°C) to investigate the conditions for
effective tellurization.
The morphology and composition of the telluride sample were found to strongly depend on
the Te supply and tellurization temperature, and through their optimization, Td-WTe2 nanowires
were finally synthesized successfully (Figure 1). Interestingly, theobtained WTe2 has the planar layered nanowire structures. The
result is different from those when we apply sulfurization andselenization on the same precursors. In the case of the WS2 andWSe2, we obtained the coaxial layered nanotube structures. This
indicates that tellurization is very different from sulfurization andselenization. We assume that the volume of the compounds is also
important for nanowire or nanotube formations, and the large
volume change in WTe2 will prohibit the nanotube formation [6].
[1] G. H. Park et al., Adv. Mater. Interfaces 6, (2019)[2] Y. Yomogida et al., Appl. Phys. Express 12, 085001 (2019).
[3] Y. Yomogida et al., Appl. Phys. Lett. 116, 203106 (2020).
[4] M. L. Hong et al., Energy Fuels 32, 6371 (2018)[5] J. M. Woods et al., ACS Nano 13, 6455 (2019)[6] Y. Yomogida, M. Nagano et al., Jpn. J. Appl. Phys. accepted (2021)- 72 -

Fig.1
TEM
image
of
synthesized WTe2 nanowires.

1P-28
Electronic structures of MoS2 nanotube bundles○Kaoru Hisama1, Mina Maruyama2, Shohei Chiashi1, Shigeo Maruyama1
and Susumu Okada2
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2

Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan

Because of a chemically inert two-dimensional network, MoS2 could be a constituent unit ofnanomaterials with structural hierarchy. It can form van der Waals stacking structures with theother layer of MoS2 or other layered materials. In addition to 2D MoS2, a tubular form of MoS2
is also the constituent material for the hierarchical structures. Coaxially arranged MoS 2 tubes
have been synthesized, just as the multi-walled carbon nanotubes. In addition to the multiwalled tubes, bundles of MoS2 nanotubes are also considered in analogy with the carbon
nanotube bundles. However, in contrast to the carbon nanotube bundles, electronic structure of
MoS2 nanotube bundles is still unclear. Therefore, in this work we aim to investigate theelectronic structure of those MoS2 nanotube bundles in terms of their inter-tube spacing andmutual orientations using the density functional theory.
Figure 1(a) shows the electronic structure of (9,9) MoS2 nanotube bundles in which eachnanotube is separated by 0.3 nm vacuum spacing from its adjacent. The dispersion relation
along the inter-tube direction of the three highest branches of the valence band exhibit unusual
feature. The upper two branches of the valence band degenerated at the Γ point while the lower
two crossed each other at the K point with linear dispersion relation. Thus, these three branches
exhibit a Kagomé -like band structure comprising a little-dispersive band and a dispersive bandwith a conical structure at the K point. This Kagomé-like band structure is found to be robust
against the inter-tube spacing and mutual orientations: The band width depends on the intertube spacing and orientation, owing to the S-S spacing between adjacent nanotubes. By
analyzing the wave function distribution of these three branches, we found that the substantial
overlap of wave functions between nanotubes causes the peculiar electronic structure [Fig. 1(b)].
(a)

(b)

Figure 1 (a) The electronic structure of (9,9) MoS2 nanotube bundle. (b) A contour plot of squared
wavefunction of the highest branch of the valence band at the * point.
Corresponding Author: Susumu Okada

E-mail: sokada@comas.frsc.tsukuba.ac.jp- 73 -

2P-1
Dispersion of single-walled carbon nanotubes with commodity plastics
PMMA○Ayaka Demise1, Tsuyoshi Ando1, Hiroharu Ajiro1, Tsuyoshi Kawai1, Yoshiyuki
Nonoguchi1,21Division of Materials Science, Nara Institute of Science and Technology, NAIST, Takayama, Ikoma,
Nara 8916-5, Japan
2
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan)&('*"&%

Single-walled carbon nanotubes (SWNTs) have superior physical properties (e.g. electric
conductivity or mechanical strength) to other conventional filler materials. Due to theirsignificant bundling, however, the solution processing of SWNTs has long been difficult,restricting the many application of SWNTs. Conventional approaches include the chemicalfunctionalization of SWNTs’ side walls to improve their interaction with the solvent, in which
physical properties are unexpectedly harmed. Aqueous micellar solution was also studied forindividual dispersion. However, these previous approaches are incompatible to the industrial
plastics, which are soluble only in organic solvents. In this context, noncovalent wrapping to
SWNTs with commodity polymers are highly
desired for incorporating SWNTs to arbitrary Table 1. List of solvents
organic matrix. Here we demonstrate the direct and*!**$'(*+()&#,%*)
efficient dispersion of SWNTs in the theta solvents
containing poly methyl methacrylate (PMMA).
*&#+%
We used from good to theta solvents for PMMA
(-
to disperse SWNTs (Table 1). UV-Vis-NIR
*!-#**
spectroscopy revealed that theta conditions for
PMMA (ethyl acetate, DMSO, acetonitrile and 2*&%"*("#
heptanone) allow for the individual isolation and!'*%&%
the colloidal dispersion of SWNTs. We thendemonstrated that the SWNTs’ dispersibility iscontrolled by the PMMA solubility that can betuned by the ratio of water to dry THF (thetacondition: 6-25 w/w% water in dry THF [1]). Fig

1 shows that good (dry THF) and poor solvents
(-

(30% H2O in dry THF) lead to poor solubility, "%(-
whereas the theta solvent (10% H2O in dry THF)
 "%(-
enables the efficient colloidal SWNT dispersion.
We will further present the comprehensive




assessments of dispersibility.
!&*&%%( -
Fig 1. UV-Vis-NIR spectra of dispersions of Nopo
[1] I. Katime, L.C. Cesteros and J.R. Ochoa, Polymer
Bulltein, 6, 447-449 (1982).
Corresponding Author: Yoshiyuki Nonoguchi
Tel: +81-75-724-7515
E-mail: nonoguchi@kit.ac.jp- 74 -

Hipco in different composition of dry THF andwater.

2P-2








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- 75 -

2P-3
Self-aligned hybrid quantum structure of diamond nitrogen-vacancy centerand carbon nanotube for electrical control of quantum states○Haruki Uchiyama1, Shigeru Kishimoto1, Junko Ishi-Hayase2, and Yutaka Ohno1,3
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan,
School of Fundamental Science and Technology, Keio University, Yokohama 223-8522,
Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan
2

Signal (mV/Mcps)

Position Y (Pm)

The nitrogen-vacancy (NV) center in diamond is an attractive nanostructure for quantum
technologies, including quantum metrology, information processing due to a long coherencetime of ~ ms at room temperature. [1] The spin state is usually controlled by the laser light andmicrowave, which arises a difficulty in manipulate the coupled NV centers individually whilequantum entanglement between NV centers can be achieved when they are closely placed
within a distance of a few ten nanometers. [2] In this work, we propose a method to achieve theelectrical and local control of the quantum state of NV centers, using a single-walled carbon
nanotube (CNT), which can apply strong local magnetic field and microwave to NV centers
due to the ultranarrow diameter and high ampacity.
The NV center-CNT hybrid structure was realized by a self-align process as described
below. After depositing individualized CNTs on a fluorine-terminated (100) diamond substrate,contact electrodes (Au, 100 nm) were formed by electron beam lithography, electron beam
evaporation, and lift-off process. To achieve self-align formation of NV centers along a CNT,
nitrogen ion implantation was carried out through an organic film with a trench along the CNT.
After depositing a C29H28O3 film, a trench was formed in self-aligned manner by applying
current through the CNT. [3] Then, ion implantation (a)Intensity (kcps)
15
of 15N2+ ions at an acceleration energy of 15 keV andElectrode
1400
post annealing were carried out to form shallow NV
centers.
1200
10
The photoluminescence mapping (wavelength
1000
of 625-1000 nm) (Fig. 1(a)) clearly shows that NV
800
CNT
centers were formed along the CNT. Optically600
detected magnetic resonance (ODMR) measurements
5400
were carried out at the center of the hybrid structurewith flowing current through the CNT. Figure 1(b)200
shows the ODMR spectra at CNT current of 0 and 12
Electrode
0
0
0
5
10
15
PA. The resonant frequency of NV center shifted by
Position X (Pm)
0.9 MHz by the CNT current due to the generated (b)0.0magnetic field. This result indicates that the energy of
0 PA
12 PA
-0.2
the electron spin of the NV center can be controlled
by the local current through a CNT.
-0.4[1] E. D. Herbschleb et al., Nat. Commun. 10, 3766 (2019).
[2] F. Dolde et al., Nat. Phys. 9, 139 (2013).
[3] S. H. Jin et al., Nat. Nanotechnol. 8, 347(2013).
Corresponding Author: Y. Ohno,
Phone: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 76 -

-0.6
2850

2860

2870

2880

Microwave frequency (MHz)2890

Fig. 1 Diamond NV center-CNT hybrid
structure. (a) Photoluminescence mappingof NV centers, (b) ODMR spectra at CNT
current of 0 and 12 PA.




2P-4


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- 77 -

2P-5
First-principles study of impurity states induced by a carbon or oxygen
atom in h-BN monolayer○Taishi Haga1, Shuaishuai Yuan2, Kirk H. Bevan2, and Susumu Saito1,3,4
1
2

3Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan

Division of Materials Engineering, McGill University, Montreal, QC H3A 0C5, Canada

Advanced Research Center for Quantum Physics and Nanoscience, Tokyo Institute ofTechnology, Tokyo 152-8551, Japan
4
Materials Research Center for Element Strategy, Tokyo Institute of Technology,
Kanagawa 226-8503, Japan

Hexagonal boron nitride (h-BN) has a honeycomb lattice structure in each layer similar tographene. While it is known that h-BN is an ideal substrate for other two-dimensional materials,
its thin layers as well as the bulk phase themselves attract much attention as wide-gap
semiconductor materials for future device applications. It has been reported that carbon atoms
as well as oxygen atoms are incorporated into the h-BN bulk during the synthesis [1]. Defects
in semiconductors often play an important role in modifying the electronic properties of thesystem [2,3]. Therefore, it is important to theoretically investigate how an impurity in h-BN
affects the electronic properties.
In this work, we study electronic properties of doped h-BN monolayer using first-principles
electronic-structure calculations based on the hybrid functional approach. The mixing
parameter between semi-local and non-local exchange in the Heyd-Scuseria-Ernzerhof (HSE)hybrid functional is optimized following the generalized Koopmans’ theorem (gKT). It has beenreported that the calculated defect levels can be accurate when the gKT is satisfied in the threedimensional materials [4]. In this study, by applying the method to a two-dimensional system,
we investigate the depth of impurity states induced by a carbon or oxygen atom in the h-BNmonolayer.
[1] T. Taniguchi and K. Watanabe, J. Cryst. Growth 303, 525, (2007).
[2] T. Haga, Y. Fujimoto, and S. Saito, Phys. Rev. B 100, 125403 (2019).
[3] T. Haga, Y. Matsuura, Y. Fujimoto, and S. Saito, to be published.
[4] P. Deak, M. Lorke, B. Aradi, and T. Frauenheim, J. Appl. Phys. 126, 130901 (2019).
Corresponding Author: T. Haga
E-mail: haga.t@stat.phys.titech.ac.jp- 78 -

2P-6

Air-Stable, Efficient Electron Doping of Monolayer MoS2
by Salt-Crown Ether Treatment○Hiroto Ogura1, Masahiko Kaneda1, Yusuke Nakanishi1, Yoshiyuki Nonoguchi2,
Jiang Pu3, Mari Ohfuchi4, Toshifumi Irisawa5, Hong En Lim1, Kazuhiro Yanagi1
Takahiko Endo1, Taishi Takenobu3, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
Kyoto Institute of Technology, Kyoto 606-8585, Japan3
Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
4
Fujitsu Laboratories Ltd., Atsugi, 243-0197, Japan
5
Nanoelectronics Research Institute, AIST, Tsukuba, 305-8562, Japan

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted muchattention because of their unique physical properties and future device applications. To
maximize their potential in device applications, it is essential to develop a sophisticatedtechnique for stable and highly efficient carrier doping. For this purpose, surface chargetransfer by chemical doping provides a powerful way to modulate the carrier density of
TMDCs [1, 2]. However, current dopants used oftentimes suffer low doping efficiency or
long-term stability, and thus a better alternative is strongly desired. Recently, an air-stableelectron doping of carbon nanotubes has been demonstrated by Nonoguchi et al. using aseries of potassium salts with crown ethers [3]. In this study, we have applied similar
technique to achieve a stable, high electron doping of monolayer MoS2.
Monolayer MoS2 was grown on SiO2/Si substrates by using chemical vapor deposition[4]. Electron doping was conducted by spin coating the butanol solution of KOH/benzo18-crown-6 on MoS2 (Fig.1a). The transfer curves of MoS2 field-effect transistors (FETs)change from a typical n-type semiconducting state to metallic one as the doping
concentration increases (Fig.1b). Such doping is found to be stable under ambientconditions, which lasts nearly even up to one month (Fig.1c). The doped MoS2 shows ahigh carrier density of 3.4×1013cm-2 and its resistance measurement revealed a metallic
temperature dependence. These results indicate that the salt-based doping provides aneffective way
y for the electron doping
g of MoS2, benefitingg its device applications. Figure 1 (a) Schematic illustration of the MoS2 FET and benzo-18-crown-6 with K+ ion. (b) Transfer curvesof the pristine and doped MoS2 at different dopant concentrations. (c) Transfer curves of the device before
and after doping at 100 mM monitored over 24 days. The doped device was kept in air throughout theperiod.
[1] D. Kiriya et al., J. Am. Chem. Soc., 139, 7853 (2014). [2] H. G. Ji et al., Adv. Mater., 31, 1903613(2019).[3] Y. Nonoguchi et al., Adv. Funct. Mater., 26, 3021 (2016). [4] K. Kojima et al., Nanoscale, 1112798 (2019).
Corresponding Author: Y. Miyata, Tel: +81-042-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp

- 79 -

2P-7






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2P-8
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- 81 -

2P-9
Intra-layer exicitons trapped in moiré potential on
monolayer-MoSe2/NiPS3 heterostructure○ Yan Zhang, Keisuke Shinokita, Yuhei Miyauchi
and Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Recently, the monolayer two-dimensional (2D) semiconductor and its artificial van der Waals(vdW) heterostructures have been attracted much attentions from the viewpoint of opticalphysics [1,2]. Moiré patterns in vdW heterostructures can be formed by stacking the same ordifferent 2D semiconductors with lattice mismatch or stacking angle, offering a new platform
to study novel optical phenomena [3]. It is well recognized that the moiré patterns would induce
periodic distribution of the potential for optically generated electron-hole pair (exciton), whichstrongly modifies the optical properties of both intra- and inter-layer excitons in the vdW
heterostructures [4].
In this study, we studied the influence of periodic moiré potential on intra-layer excitons ofmonolayer molybdenum diselenide (1L-MoSe2) and nickel phosphorus trisulfides (NiPS3)

period(a6.5
nm).
Figure1shows
photoluminescence (PL) spectra of 1L-MoSe2 on
SiO2/Si substrate (grey) and 1L-MoSe2/NiPS3(blue) at 10 K. The several sharp PL (XM) peaks
were observed in the vdW heterostructure, whichmight come from the recombination signals of
intra-layer excitons in 1L-MoSe2, trapped by theperiodic moiré potential.

Normalized intensity

heterostructure with anti-ferromagnetic ordering. We fabricated a vdW heterostucture with the
zigzag edge of 1L-MoSe2 parallel to that of NiPS3
1.0 1L-MoSe2
X 10 K
1L-MoSe2/NiPS3(1L-MoSe2/NiPS3) using mechanical exfoliation,
XM
where the large lattice mismatch (11.2%) between
the layers, introducing a short range of moiré
0.5

XN
0.0
1.45

1.50

- 82 -

1.55 1.60 1.65
Energy (eV)1.70

Figure 1. PL spectra of 1L-MoSe2 and 1LMoSe2/NiPS3 heterostructure at 10 K. X andX* are denoted as exciton and trion PL signals,
respectively. XM and XN are assigned as PLfrom intra-layer excitons and NiPS3 substrate,
respectively.

[1] Y. Miyauchi, K. Matsuda et al. Nat. Commun. 9, 2598 (2018).
[2] Y. Zhang, K. Matsuda et al. Adv. Mat. 32, 2003501 (2020).
[3] K. L. Seyler, P. Rivera, H. Yu, et.al. Nature, 567, 66 (2019).
[4] E. M. Alexeev, D. A. Ruiz-Tijerina, M. Danovich, et.al. Nature, 567, 81 (2019).
Corresponding Author: Kazunari Matsuda
Tel: +81-774-38-3460, Fax: +81-774-38-3460
E-mail: matsuda@iae.kyoto-u.ac.jp

X2P-10Tuning Heat Flow Across Two-dimensional Layered van der Waals
Materials via Interfacial Mismatch and Coupling Engineering○Wenyu Yuan1, Kan Ueji1, Takashi Yagi2, Takahiko Endo1, Hong En Lim1, Yasumitsu
Miyata1, Yohei Yomogida1, and Kazuhiro Yanagi1
12Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
National Metrology Institute of Japan, National Institute of Advanced Industrial Science andTechnology, Tsukuba, Ibaraki 305-8563, JapanThe understanding of heat flow across solid interfaces and its control are extremely
important for the applications of advanced electronics, thermal energy conversion, and thermal
managements in devices. Two-dimensional (2D) material family with ultrathin thickness as a
new rising star makes it possible to tune the thermal property at atomic-scale. [1] For instance,
the stacking structure of graphene, MoS2, and WSe2 shows extremely high thermal isolator
property on a sub-2-nm scale [2], and disordered WSe2 exhibits very low thermal conductivity[3].
Therefore, experimental understanding on the heat flow across the 2D interfaces is of great
importance. Here, we provide apolyethylene
glycol(PEG)assisted TDTR method to evaluate
thermal transport properties acrossfour layered (4L)-transition metal
dichalcogenides (TMDCs) withimproved sensitivity. A series of
4L-TMDCmaterials
wereprepared via multi-step transfer
process, and obvious TDTR
signal change can be observed in Figure 1. (a) Schematic for the PEG-assistant TDTR method. (b)The TDTR signals of CVD-4L-MoS2, transferred 4L-MoS2, andCVD-4L-MoS2, transferred 4LMoS2, and transferred MoSe2-

transferred MoSe2-MoS2-MoSe2-MoS2.

MoS2-MoSe2-MoS2 heterostructure, implying that the transfer and the heterostructure
significantly affect the heat flow across the vdW materials due to the rich interfacial mismatch
and weak interfacial coupling effect in transferred 2D vdW stacking materials.
[1] Y. Liu et al. Nature, 567, 323(2019).
[2] S. Vaziri et al. Sci. Adv., 5, eaax1325 (2019).
[3] C. Chiritescu et al. Science, 315, 351 (2007).
Corresponding Author: K. Yanagi
Tel: +81-(0)42-677-2494, Fax: +81-(0)42-677-2494,
E-mail: yanagi-kazuhiro@tmu.ac.jp- 83 -

2P-11
Photoreaction of C70 with Disilirane: Electronic Properties of Silylated
Adducts○Shintaro Nishida1, Masahiro Kako*,1, Michio Yamada2, Yutaka Maeda2,
Makoto Furukawa3, Takeshi Akasaka2,3,4
1

Department of Engineering Science, The University of Electro-Communications, Chofu,
Tokyo 182-8585, Japan2
Department of Chemistry, Tokyo Gakugei University, Koganei, Tokyo 184-8501, Japan
3
Foundation for Advancement of International Science, Tsukuba, Ibaraki 305-0821, Japan
4
School of Materials Science and Engineering, Huazhong University of Science and Technology,
Wuhan, Hubei 430074, P. R. China

Chemical derivatization of fullerenes has been intensively studied as useful methods to modify
the physical and chemical properties of fullerenes for various applications such as molecularelectronics, nanomaterial science, and biochemistry [1]. Introduction of heteroatoms such as
electropositive silicon atoms has been reported to affect the electronic characteristics offullerenes remarkably. Reactive organosilicon compounds such as silylenes, disiliranes, silyl
radicals, and siliranes have been employed to derivatize of fullerenes to afford thecorresponding silylated fullerene derivatives [2,3]. Electrochemical analyses and theoretical
calculations have revealed that these silylated derivatives have more negative charge on thecage than the parent fullerenes. In our continuing studies, we reported that the photoreactionsof hollow fullerenes and endohedral metallofullerenes with 1,1,2,2-tetramesityl-1,2-disilirane(1) as a versatile silylating reagent afforded the corresponding addition products [2,3].
Spectroscopic, electrochemical, and crystallographic techniques, as well as theoretical
calculations disclosed the structural and electronic properties of the silylated adducts. Although
the photoreaction of C70 and disilirane 1 was also reported in the early stage of studies of thefunctionalization of fullerenes, the electronic properties of the corresponding photoadduct havenot been characterized yet [4]. These results prompted us to investigate the reactivities of C70
with 1,1,2,2-tetrakis(2,6-diethylphenyl)-1,2-disilirane (2), in which the regiochemistry of thephotoaddition is expected to be affected by more bulky substituents on the silicon atoms. We
now report the details of the photoaddition of C70 with 2 indicating the structural and electronic
properties of the photoproducts. The photoreaction of C70 and 2 was conducted in toluene using
two 500W halogen lamps with an aqueous sodium nitrite solution filter (cutoff < 400 nm) under
an argon atmosphere. Separation of the reaction mixture afforded the two adducts, which werestructurally assigned to 1,4-adduct at the [a,c] position and 1, 4-adduct at the [d, d’] or [e, e]
positions. The electron-donating effects of the silyl groups in these products are discussed incomparison with those of the related compounds.
Scheme 1.
R

R
Si

a
b

c d

e d’

c’

a’
b’

Mes =

Si

R

R
1 R = Mes
2 R = Dep

C70

Dep =

[1] A. Hirsch Angew. Chem. Int. Ed, 32, 1138–1141 (1993).
[2] M. Yamada et al. Bull. Chem. Soc. Jpn, 87, 1289-1314 (2014).
[3] M. Kako et al. Molecules, 22, 1179 (2017).
[4] T. Akasaka et al. J. Am. Chem. Soc, 116, 2627–2628 (1994).
Corresponding Author: M. Kako Tel: +81-42-442-5570  E-mail: kako@e-one.uec.ac.jp- 84 -

2P-12         

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- 85 -

2P-13Growth of single-walled carbon nanotubes on SiO2/Si substrate andalumina buffer layer by alcohol catalytic CVD method using Ir catalyst○Daiki yamamoto1, Shu kondo1, Kamal P Sharma1, Takahiro Saida1,2,
Shigeya Naritsuka3, Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
2
Nanomaterial Research Center, Meijo University, Japan3
Department of Materials Science and Engineering, Meijo University, Japan

1.

Introduction

Single-walled carbon nanotubes (SWCNTs) are one-dimensional materials, having various
potential for future nanoelectronics. So far, we have succeeded in growing vertically aligned smalldiameter SWCNTs by alcohol catalytic chemical vapor deposition (ACCVD) with an Ir catalyst [1].
However, there are a few researches about SWCNTs growth using Ir catalysts, especially, usingalumina buffer layer. In this study, to investigate the effect of alumina buffer layer, SWCNT growth
was performed on SiO2/Si substrates and those with alumina buffer layers by ACCVD using Ir catalysts,
and compared the results.

2.

Experimental procedure

After a 10 nm-alumina buffer layer was deposited on an SiO2/Si substrate by rf-sputtering, an Ir
catalyst was deposited on it by the pulsed arc deposition. The nominal thickness of the Ir catalyst was
0.3 nm. Then, the substrates were introduced into an ultra-high vacuum (UHV) CVD system, which
was used for SWCNT growth. After the substrate was heated to a growth temperature in an H2
atmosphere of 㹼110-3 Pa, ethanol gas was supplied through nozzle onto the substrates to grow
SWCNTs [1]. The grown SWCNTs were analyzed by Raman spectroscopy.

3.

Result and Discussion

Figs. 1 (a) and (b) show RBM regions ofRaman spectra for SWCNTs grown at 800°C for 60
min under an ethanol pressure of 1×10-2 Pa with an Ir
catalyst on a SiO2 substrate and an alumina buffer layer,
repspecively. The SWCNTs on the alumina buffer layer
was slightly larger than those on the SiO2 substrate.
Figs. 1 (c) and (d) show optical micropose images of
SWCNT films grown on the SiO2 and alumina/SiO2
substrates, respectively. Morhology of grown SWCNTs
were different between the two substrtates, whichsuggests that the growth mechanism was different.
We will discuss the effects of the alumina buffer layer
on SWCNT growth.
This work was supported in part by Private
University Research Branding Project from the
Ministry of Education, Culture, Sports, Science andTechnology (MEXT), Japan.
[1] T. Maruyama et al. Appl. Surf. Sci. 509 (2020) 145340.

Fig. 1 (a, b) show the RBM regions ofRaman spectra for SWCNTs from an Ir
catalyst grown (a) on the SiO2 substrateand (b) on the alumina buffer layer. (c, d)shows optical microscope images of thesamples (a) and (b), respectively.

Corresponding Author: T. Maruyama, Phone: 81-52-838-2386, Fax: 81-52-832-1179
E-mail: takamaru@meijo-u.ac.jp- 86 -

2P-14
Analysis of acetylene-induced growth acceleration of
single-walled carbon nanotubes by isotope labeling technique○Akari Kobayashi1, Ryoya Ishimaru1, Keigo Otsuka1, Taiki
Inoue2, Shohei Chiashi1 and Shigeo Maruyama1
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan2
Department of Applied Physics, Osaka University, Osaka 565-0871, Japan

Single-walled carbon nanotubes (SWCNTs) arepromising for various applications. Time-dependent
growth analysis of SWCNTs has been conducted
extensively for understanding the growth mechanism.
However, most studies focused on growth of SWCNTs inbulk form and did not discuss individual difference of
SWCNTs [1] and others observed only few and shortindividual SWCNTs [2]. There had been no method that
could observe growth process of long, individual
SWCNTs in large quantity. Recently, we have proposed anovel method, digital isotope labeling, which fulfills allthese demands [3,4].
In this study we investigated effects of acetylene inaddition to ethanol on individual SWCNT growth by thedigital isotope labeling. We synthesized SWCNTs from12
C ethanol with addition of 13C ethanol as labels andobtained growth curves and growth rate by detecting thelabels along each SWCNT with Raman mapping(Fig.1(a)). We introduced 12C acetylene of 1/50 flow rateof ethanol in the middle of synthesis and calculated thecomposition ratio of 12C acetylene and 13C ethanol byobserving Raman shift of SWCNTs (Fig.1(b)). From
Raman shift (1576 cm-1), the SWCNT was composed ofabout 27 % of 13C ethanol and about 73 % of 12C acetylene
at the point. When considering the flow rate, acetylene iseasy to be used for grown 100 times or more than ethanol.
Growth of most SWCNTs was accelerated by introducingof acetylene. Comparison of growth rate obtained by
Raman mapping and incorporation frequency calculatedby Raman spectrum reveals that more ethanol withacetylene is captured by catalysts than ethanol without
acetylene.
[1] E. Einarsson, et al., Carbon, 46, 923 (2008).
[2] R. Rao et al., Nat. Mater., 11, 213 (2012).
[3] K. Otsuka et al., ACS Nano, 12, 3994 (2018).
[4] B. Koyano et al., Carbon, 155, 635 (2019).

Fig. 1 (a) A typical growth curve of a
SWCNT which is plotted based on an
isotope introduction sequence (top panel)and a Raman mapping image (right panel).
(b) Typical Raman spectra of the SWCNT
grown by 13C ethanol with 12C acetylene at
57-81 µm from top of the SWCNT.

Corresponding Author: S. Maruyama Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 87 -

2P-15Fabrication and Efficiency Evaluation of Organic Photovoltaics using
Single-walled CNT of the Transparent Conductive Electrode○Riku Hatomoto,1 Hao-Sheng Lin,1 Takeshi Hashimoto,2 Satoru Hashimoto,2 Yutaka
Matsuo1
1Department of Chemical System Engineering Graduate School of Engineering, Nagoya

University, Furo-tyo, Chikusa-ku, Nagoya 464-8603, Japan
2Meijo Nano Carbon, Nagoya 463-0003, JapanIn organic photovoltaics (OPVs), indium tin oxide (ITO) substrates are mainly used fortransparent conductive electrodes. Carbon nanotubes (CNTs) have been recognized as currently
most promising alternative to ITO thanks to their remarkable flexibility and low-cost. However,the low conductivity and rough interfacial morphology of CNTs severely limited the up-layer
fabrication in OPVs, such as hydrophilic hole-transport layer (HTL) fabrication, active layer
fabrication etc.
Table.1 Photovoltaic parameters of OSCsof HTL. The results showed that HNO 3 can be aneffective dopant to CNTs to achieve a power
conversion efficiency (PCE) of 1.35%, and Nafion
can effectively dope PEDOT:PSS to achieve a PCEof 1.12% compared to a reference PCE of 1.61%.

Current (mA)

This study focuses on solving the efficient fabrication of hydrophobic HTL by throughmodification of hydrophilicity of both CNTs and HTL materials. Nafion and HNO3 werescreened for altering the hydrophilicity of CNTs.

Nafion and isopropanol in different doping ratio to
HTL was investigated to modify the hydrophobicity
















Voltage (V)Fig.1J-V curves of OSCs in HNO3 dopingCorresponding Author: Y. Matsuo
Tel: +81-52-747-6722
E-mail:yutaka.matsuo@chem.material.nagoya-u.ac.jp- 88 -

2P-16
Thermoelectric properties of morphology-controlled
single-walled carbon nanotube alloys○Yota Ichinose, Rikuto Abe, Kan Ueji, Yohei Yomogida, Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo, Japan-1 -2

Power factor (PWm K )Thermoelectric performance of single-walledcarbon nanotube (SWCNT) thin films attracts a lotof interest for both basic and application aspects[1]. The purity and the alloyed condition, i.e., theratio of metal to semiconducting types, of the thinfilms significantly influence their thermoelectricperformance [2,3]. It is known that the network
morphology of thin films also significantly
influences various physical properties of the thinfilms, and thus it is important to clarify the
relationships between the alloyed network
morphology and thermoelectric performance.
Here, in this study, we investigated how thedifference of network connections of metallic andFig. 1 Schematic diagram of the series
semiconducting
SWCNTsinfluences
and parallel structures.
thermoelectric performance although the alloyed
condition, i.e., the ratio of metallic to80
semiconducting types, was the same as a whole.
We prepared two kinds of devices; one is that60
metallic and semiconducting SWCNT films areconnected in a series, and the other is that they are
Parallel40
connected in a parallel manner (Fig.1). In bothSeriescases, the alloyed ratio is approx. 50% as a whole,20
but the network morphology is completely
different. Subsequently, the Seebeck coefficient0and electrical conductivity were measured whilevarying the Fermi level using the electrolyte-2 -1 0
1
2
double layer technique.
Gate voltage (V)Comparing the thermoelectric performance ofFig. 2 Fermi level dependence of the power
the parallel and series structures, the experimental
factor in parallel and series structure.
results show that the parallel structure shows alarger performance (Fig.2), indicating the control of the alloyed morphology is very importantfor maximization of the thermoelectric performance. Furthermore, the theoretical analysis
revealed that the parallel and series models can well reproduce the experimental results. In thispresentation, we will discuss the detailed experimental results and the background.
[1] J. Blackburn et al., Adv. Mater. 30, 1704386 (2018). [2] K. Yanagi et al., Nano Letters 14 (11), 6437 (2014).
[3] Y. Ichinose et al., Nano Letters 19, 7370 (2019).
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494, Fax: +81-42-677-2483, E-mail: yanagi-kazuhiro@tmu.ac.jp- 89 -

2P-17Gate-tuned high-harmonic generation
in metallic single-walled carbon nanotubes and graphene○Hiroyuki Nishidome1, Kohei Nagai2, Kent Uchida2, Kenji Kawahara3, Junko Eda1,
Hitomi Okubo1, Yohei Yomogida1, Hiroki Ago3, 4, Koichiro Tanaka2, 5, Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Kyoto University, Kyoto 606-8502, Japan3
Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan
4
IGSES, Kyushu University, Fukuoka 816-8580, Japan
5
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501, Japan
High-harmonic generation (HHG), which is the generation of light with multiple opticalharmonics, is an unconventional nonlinear optical phenomenon beyond the perturbation regime.
HHG, which was initially observed in gaseous media, has recently been demonstrated in solidstate materials. Determining how to control such extreme nonlinear optical phenomena is achallenging subject. It is expected that materials with large anharmonicity in the band
dispersions would emit higher harmonics. Therefore, Dirac materials, like the graphene and themetallic single-walled carbon nanotubes (m-SWCNTs), which have linear dispersions are
expected to emit higher harmonics. In previous work,
however, m-SWCNTs generated lower-order harmonics thansemiconducting ones[2], and graphene also generated lower
order[3]. These low-order HHG might be caused by initiallydoping conditions. Certainly we have observed that carrier
injection would suppress 5th harmonics and enhance 3rd insemiconducting SWCNTs[2]. Thus, in this study, weinvestigated Fermi-level dependence of HHG in the grapheneand the m-SWCNTs by using electrolyte gating method.
We prepared monolayer graphene and aligned-m-SWCNT
film and employed side-gating device using ionic liquid totune Fermi-level through the gate voltage VG. The samples
were irradiated with 0.26 eV mid-infrared pulse laser, and weinvestigated the relations between HHG and carrier injection. Fig.1 High-harmonic intensity (top) and
Figure 1 shows the HH intensities and source-drain source-drain current JSD (bottom) with thecurrent JSD as a function of VG in m-SWCNTs and insists shift of the gate voltage in m-SWCNTs.
carrier injection would suppress all HHG. In contrast, HHG
in graphene was almost the same intensity through carrier
injection, but we found unique ellipticity dependence. Figure
2 shows normalized HH intensity Ix and Iy in graphene withdifferent VG as a function of ellipticity ε of the laser. Here Ix(Iy) means intensity in the direction of major (minor) axis ofelliptically polarized laser. This result suggests that VG would
tune only Iy. We will discuss experimental details and thesebackgrounds.
Fig. 2 Normalized harmonic intensity in[1] S. Ghimire et al. Nat. Phys., 15, 10 (2019).
graphene with different doping levels as afunction of ellipticity ε of the laser. These[2] H. Nishidome et al. Nano Lett., 20, 6215 (2020).
intensities were normalized by Ix at ε=0.
N. Yoshikawa et al. Science, 356, 736 (2017).
Corresponding Author: K. Yanagi, Tel: +81-42-677-2494, Fax: +81-42-677-2483, E-mail: yanagi-kazuhiro@tmu.ac.jp- 90 -

2P-18Circular dichroism spectra on thin films of Helicity Selected Single-wall
Carbon Nanotubes○Yuuya Hosokawa, Yohei Yomogida, Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Chiral structure of nanotube materials can exhibit very unique physical properties such as bulk
photovoltaic, unconventional super conductivity, and so on [1]. Regarding single walled carbon
nanotubes (SWCNTs), theoretical studies suggest that their chiral structures will induce unique
physical phenomena such as photo galvanic effect, gigantic circular dichroism, and so on [2].
However, those phenomena have not been experimentally verified yet. Recently, theadvancement of purification techniques enables us to prepare helicity selected SWCNTs in alarge scale [3], and then, as the first step, understanding of circular dichroism (CD) characterof their thin films is required before the evaluation of their unique physical properties. It should
be noted that, when we use CD spectrometer for thin films composed by nanomaterials withanisotropic structure, the presence of linear dichromic (LD) character induces “anomalous” CD
signals [4]. Therefore, we need to carefully check whether we can detect “true” CD signals
originating the helicity of nanotubes in SWCNT thin films. For that purpose, in this study, we
prepared three types of thin films, (6,5), (11,-5) and their racemic mixture, and we intentionallyprepared the thin films in which nanotubes are randomly oriented, and investigated theinfluence of LD component on their CD signals.
Figures 1 and 2 show the LD and CD spectra of thethree samples, respectively. In this study, since weintentionally prepared thin films where nanotubes
are randomly oriented, the amount of LD in all thesamples was suppressed to be less than 0.01. Thenas shown in the fig. 2, in the racemic mixture, we
could not observe anomalous CD signals. In
contrast, in the case of (6,5) and (11,-5) thin films,
we clearly observed asymmetrical CD signals as
expected. These results indicate that the CD signals
due to nanotube helical structure can be correctly Figure. 1 LD spectra of the thin film samples.
detected when we prepare thin film form where thenanotubes were randomly oriented.
References:[1] Qin et al., nature comm. 8, 14465 (2017), Zhang et al.,Nature 570, 349 (2019)[2] Ivchenko & Spivak, PRB 66, 155404 (2002), Satco et al.,
PRB 99, 075403 (2019)[3] X. Wei et al., Carbon 132, 1-7 (2018)[4] Y. Shindo, J. Spec. Soc. Jpn. 34, 215 (1985)
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494 e-mail: yanagi-kazuhiro@ tmu.ac.jp- 91 -

Figure 2 CD spectra of the thin film samples

2P-19Synthesis of Vertical-Aligned Carbon Nanotube / Al Composite Electrodefor Li-ion Capacitor Cathode○Masanori Hara, Ryo Kawachi, Takashi Banno, Masamichi Yoshimura
Toyota Technological Institute, Nagoya 468-8511, Japan[1] P. Han, Adv. Energy Mater., 8, 1801243 (2018).
[2] C. de las Casas, J. Power Sources, 208, 74 (2012).
[3] D. Yoneda, et al., Mater. Res. Express, 6, 086322 (2019).
Corresponding Author: M. Hara
Tel: +81-52-809-1850, E-mail: haram@toyota-ti.ac.jp- 92 -

current density, j / PA cm-2

1. Introduction
Recently, expanding usage of mobile devices and renewable energies has demanded thedevelopment of a high performance rechargeable power sources with short charging time. Liion capacitor (LIC) [1] is a composite capacitor that consists of electric double layer capacitor(EDLC) cathode and Li-ion battery (LIB) anode [2]. LIC has both advantage of EDLC and LIB,
high electron charged-discharge rate and high capacity. To improve performance of LIC, highsurface area and highly-aligned structure are also required for the electrodes. In this research,
we have synthesized vertical-aligned CNT on the Al substrate (CNT/Al) for cathode of LIC byalcohol catalytic chemical vapor deposition (ACCVD). The CNT/Al composite electrode wascharacterized and its performance was evaluated in Li ion containing organic solvent.
2. Experimental
Al substrate was covered with 2 nm Co layer as a catalyst for CNT growth by arc plasma
deposition. Vertical-aligned CNT was grown on the Co deposited Al substrate by ACCVD using
ethanol vapor as a carbon source [3] at 600°C for 10 min under 1 kPa condition. The CNT / Alelectrode was characterized by scanning electron microscopy (SEM), Raman spectroscopy, andelectrochemical methods (cyclic voltammetry (CV) and charge-discharge measurement (CDC))
in 1 M LiPF6 and ethylene carbonate(EC) and diethyl carbonate (DEC) mixed solution(EC:DEC = 1:1) using a coin cell.
3. Results and discussion
Fig. 1 shows a SEM image of the CNT/Al electrode. The CNTs were grown vertically on
the Al substrate and the length of CNT was around 10 μm. During the growth, the alumina layer
formed on Al surface works as a passivation layer andsuppresses aggregation of Co catalyst particles on thesubstrate during CNT growth. From Raman spectroscopy, we
confirmed that the grown CNTs were multi-walled CNTs.
Fig. 2 shows a CV obtained on CNT/Al electrodes in thepotential region between 2.5 and 4.0 V in 1 M LiPF6 andEC:DEC solution. The CV curve without peaks suggests thatno chemical reactions except for charging of double layer
capacity take place and the electrode is stable in these Fig. 1 Cross sectional SEM imageof CNT/Al synthesized by ACCVD.
potential region. The capacity of CNT/Al estimated from-230
CDC measurements is 2.91 mC cm , which is ca. 30 times
20
higher than that on bare Al electrode. The electrochemical
10
behavior demonstrates that the vertical-aligned CNT/Al
0electrode is a promising candidate of LIC capacitor cathode.
-10
-20
-30

scan rate 5 mV/ s
2.5

3.0
3.5
+
potetial, E / V vs. Li/Li

4.0

Fig. 2 CV obtained on the CNT/Al
electrodes in 1 M LiPF4 + EC:DEC(1:1) solution. Scan rate: 5 mV/s.

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- 93 -  +8. >2/ 4938>

2P-21
Relationship between van der Waals force and tensile strength of
MWNT/polymer composites by Melt Blending○Koichi Utsugi1, Masaru Sekido2
1

Division of Production System and design Engineering, National Institute of Technology, Sendai
College, Natori 981-1239, Japan2
Department of Materials and Environmental Engineering, National Institute of Technology, Sendai
College, Natori 981-1239, Japan

Interfacial properties are known to have a critical effect on the mechanical properties of ananocomposite material system. Previously we have prepared CNT/high density polyethylene(HDPE) composites by melt blending and measured tensile strength to find that tensile strengthof CNT/HDPE was not improved [1]. This is presumably due to the poor load transfer between
the CNTs and HDPE. The van der Waals force between HDPE and CNT is small since HDPE
is a non-polar polymer.
In this study, we investigated the effects of van der Waals force, such as dipole-induced
dipole forces and π-π stacking at the interface between MWNT and polymer matrix on thetensile strength of MWNT/polymer composites.
MWNT/HDPE, MWNT/polyamide-6 (PA-6), MWNT/polyvinyl alcohol (PVA),
MWNT/polystyrene (PS), and MWNT/polybutylene terephthalate (PBT) composites with
0.99wt.%, 2.9wt.%, and 4.8 wt.% MWNT content were prepared, screw speed of 100 rpm, anda recycle time of 10 minutes.
The tensile strength of MWNT/PA-6 and MWNT/PVA increased at all weight ratios. It issuggested in 0.99wt.% that the tensile strength is increased by the dipole-induced dipole force
between the MWNT and the polymer matrix (Figure 1and 2). The tensile strength may dependon the steric hindrance of polymer matrix rather than the van der Waals force between the CNTs
and the polymer matrix at higher CNT weight ratios. In the case of MWNT/PS, it was expectedthat the interfacial properties would be improved by the π-π stacking at the interface between
MWNT and aromatic rings of PS. But the tensile strength decreased at all weight ratios.
90

MWNT/HDPE

MWNT/PA-6

MWNT/PVA

Difference in tensile strength from control / MPa

80
70

Tensile strength / MPa

20

MWNT/PS

60
50
40
30
20
10
0
control

0.99wt.%2.9wt.%

MWNT/HDPE

MWNT/PA-6

MWNT/PVA

MWNT/PS15
10
5
00.99wt.%2.9wt.%

4.8wt.%

-5
-10
-15

4.8wt.%

Fig. 1 Tensile strength of MWNT/polymer composite.

Fig. 2 Difference in tensile strength from control of
MWNT/polymer composite.

[1] Atsushi Onodera et al., The 54th Fullerenes-Nanotubes-Graphene General Symposium, 1P-15 (2018)
Corresponding Author: K. Utsugi
Tel: +81-22-381-0329, Fax: +81-22-381-0329,
E-mail: a1912605@sendai-nct.jp- 94 -

2P-22
Direct Growth of Graphene on GaN using Alcohol CVD○Shohei Yabuta, Shinichiro Mouri, Tsutomu Araki
The Graduate School of Science and Engineering, Ritsumeikan University,
Nojihigashi 1-1-1, Kusatsu, Shiga, Japan
GaN/graphene Schottky diodes have been studied recently towards applications in opticaland electronic devices [1-3]. However, the current state of the art requires a process to transfer
graphene crystals grown on metal foils onto compound semiconductor substrates, and there isconcern that residues from this process deteriorate the device performance. In this study, toovercome this issue, we have attempted to grow graphene directly on GaN substrates using
alcohol CVD [4].
Two types of substrates, a GaN (0001) template (GaN/sapphire) and a GaN templatewrapped in a copper foil, were prepared and graphene was grown on them. Argon and nitrogenwere used as the carrier gas and the etching gas, respectively. Ethanol was used as the
carbon source. An optical microscope image of a sample grown at 950°C for 40 minutes isshown in Fig. 1. It can be seen that the film was grown on almost the entire surface of thesubstrate, and that there is a difference in contrast between the areas where the film was notgrown and where the substrate is exposed. As shown in the Raman spectra for each substrate(Fig. 2), there are D, G and 2D bands, indicating the growth of graphene structures, and the Gband wavenumber of 1601 cm-1 and the low 2D band intensity suggest the formation ofmultilayer graphene [5-7]. In addition, we found that the Raman intensity ratio of G-mode toD-mode (G/D ratio) of copper foil-wrapped GaN template was suppressed as compared withthat of the unwrapped GaN template. We think that this is due to the catalytic effect of thecopper evaporated from the copper foil, which suppresses the formation of amorphous
structures on the substrate surface, resulting in a reduction of D-mode signal. The optimized
growth condition towards the growth of few layer graphene will be discussed in thepresentation.

Fig.1 Optical microscope image of graphene grown on GaN

Fig.2 Raman spectrum after graphene growth

References[1] G Jo et al., Nanotechnology.21,175201(2010)[2] S. Tongay et al., Appl. Phys. Lett. 99, 102102 (2011)[3] Z.Yan et al., Nature Communications.3, 827 (2012)[4] X. Chen et al., carbon.94, 810 (2015)[5] A. C. Ferrari et al., Phys. Rev. Lett. 97, 187401(2006)[6] D.L. Silva et al., Carbon.161,181(2020)[7] F. Ghaemi et al., Chem Intermed.43,4981 (2017)- 95 -

Corresponding Author: S. Yabuta
E-mail: re0115px@ed.ritsumei.ac.jp

2P-23
Elucidation of charge interactions between graphene and quantum dots
○Zen Inoue1, Yasushi Ishiguro2, Alexader Baranov3 , Igor Nabiev4, Kazuyuki Takai1, 2
12

Graduate school of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, JapanITMO Univ, 49,Kronverksky, St.Petersburg, Russia MEPhI Univ, 31, Kashirskoe, Moscow, Russia

Graphene as 2-dimensional material has attractive electronic properties, such as broad
spectral bandwidth, high electron mobility. However, graphene has relatively low absorbancein spite of its extremely wide-band nature, which limits its application to photodevices [1].
Semiconductor nano-crystals in 0-dimension known as quantum dots (QDs) is promising forphotonics applications due to their size-dependent tunable optical properties [2]. To realize aphotodevices using graphene, a method of constructing hybrid structure combining graphene
and QDs has been proposed. But, the mechanism of charge transfer at the interface between
graphene and QDs is not yet understood [3]. In this study, we clarify the interactions of graphenewith QDs and QD solvents (toluene and that containing water) at the interface.
Mono-layer (1L) Graphene was prepared by using mechanical exfoliation of highly oriented
pyrolytic graphite (HOPG) followed by transferring on a SiO2 (285 nm) / Si substrate. The
electric conductivity was measured for a field effect transistor (FET) using 1L graphene as achannel material after annealing in vacuum chamber (<10-4 Pa) , followed by dropping of CdSeQDs and toluene, which are dehydrated, as stored, and water-saturated on graphene.
Fig.1 shows the transfer characteristics of the FET of graphene deposited with CdSe-QDs.
The charge neutral point of the FET (VCNP) shifted to the lower gate voltage (electron) side after
deposition of CdSe-QDs on graphene, suggesting electron carrier transfer from QDs tographene at the interface. Fig.2 shows the transfer characteristics of graphene deposited with
Toluene dehydrated. VCNP shifted to the higher gate voltage (hole) side. The water-containing
toluenes show similar hole doping. On the contrary, previous studies have reported that
adsorption of toluene vapor in vacuum chamber gives graphene electron carriers [4]. Toluene
is expected to act as a catalyst and cause hole doping with oxygen and water in ambient.
0.026

Toluene
CdSe

0.025
0.024
0.023
0.022

0.02
Conductivity σ (mS)

Conductivity σ (mS)

0.027

-60 -40 -20 0 20 40 60
Gate Voltage Vg (V)0.0195

AnnealToluene dehydrated

0.019
0.01850.018
0.0175-60 -40 -20 0 20 40 60
Gate Voltage Vg (V)Fig. 1 Effects of CdSe QDs on FET

Fig. 2 Effects of solvent (Toluene) on FET[1] K. Kim, et al. Nature 457, 706–710 (2009).[2] Y. Sun, et al. Scientific Reports 8, 5107(2018)
[3] R. Li, et al. Scientific Reports 6 ,28224(2016). [4] A.A. Kaverzin, et al. CARBON 49, 3829-3834(2011)
Corresponding Author: K. Takai
E-mail: takai@hosei.ac.jp- 96 -

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2P-25

Optical properties of Zn-porphyrin covalently bounded to MoS2 and WS2.
Ruben Canton-Vitoria1, Ryo Kitaura1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan.

Two-dimensional transition metal dichalcogenides (TMDs) have attracted increased attention todevelop donor-acceptor systems towards improved energy conversion applications. Optoelectronic
properties of TMDs can be tuned by interaction with small organic chromophores, leading to versatile
donor-acceptor systems. Herein we covalently functionalized MoS2 and WS2 with Zn-porphyrin
towards 1,2-dithiolane additions. A reduced level of aggregations was confirmed by AFM in figure 1ac, showing a pseudo-ideal system of a 0-dimensional emissive material (Zn-porphyrin) insolated on a
2D emissive-material (TMDs). EDX under high magnification STEM confirm the presence of Zn
porphyrin at basal plane (figure 1d). Raman nodes of the porphyrin is only observed on the TMDsmonolayers (figure 1e). UV spectra show a combination of absorption species from Zn-porphyrin and
TMDs. Also, PL emission of ZnP-porphyrin-WS2 evidenced a new band at the near-IR region. Powerand temperature dependence reveals that such a new band was associated with a ZnP+-WS2intermediate (figure f). Finally, the new hybrid materials show enhancement of the response in photosensors at the porphyrin absorption region.

Figure 1. AFM of (a) CVD-WS2 and (b) ZnP-WS2. (c) Height line profile of AFM figures (a) and (b).
(d) EDX, (e) Raman mapping of ZnP on WS2 layer. (f) Power dependence of PL emission.

- 98 -

2P-26
Cationic Nitrogen Doped Graphene as p-Type Dopant in PEDOT:PSS
Hole-Transporters for Organic Solar Cells○Takuhei Kaneko1, Hao-Sheng Lin1, Sangwoo Chae1, Takumi Yana1, Nagahiro Saito1, andYutaka Matsuo1
1

Department of Chemical System Engineering, Graduate School of Engineering, Nagoya University,
Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

In this research, cationic nitrogen doped graphene (CNG) was designed as a p-type dopant
in hole transport layer (HTL) for organic solar cells (OSCs). The CNG-doped poly(3,4ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) applied in OSCs as HTL
showed an improved power conversion efficiency (PCE) of 2.76% with a PEDOT:PSS HTL
reference in a PCE of 1.96%. The CNG applied device indicated higher short-circuit current(JSC) and open-circuit voltage (VOC). Increased JSC value was majorly contributed by the
improved conductivity of PEDOT:PSS. The promoted VOC value was ascribed from the betterinterface that forming the active layer with a better morphology.
Table. 1 Photovoltaic parameters of OSCs
PEDOT:PSS
CNG doped PEDOT:PSS

Jsc (mA/cm2)
5.13
9.72

Voc (V)
0.603
0.612

FF
0.634
0.464

PCE (%)
1.96
2.76

Fig. 2 J-V curves of OSCs

Fig. 1 The structure of CNG

Corresponding Author: Y. Matsuo
Tel: +81-52-747-6722
E-mail: yutaka.matsuo@chem.material.nagoya-u.ac.jp- 99 -

2P-27Micro-patterning of graphite by Lithographic method○Jianwei Fu2, Genki hirobe1, Yasushi Ishiguro1, Kazuyuki Takai1, 2
1

Department of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan
2
Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan

Graphene has excellent properties such as high electron mobility and novel chemical
reactivity, and is expected to be applied to next-generation semiconductor devices such as
sensors and to catalysts. However, since graphite, which is the mother material of graphene, isdifficult to microfabricate, there have been few studies using the sample of nano/micropatterned graphite in well-defined manner so far, even though the size and shape have a great
influence on the electrical properties and chemical activities of graphene. In this study, in orderto achieve a large-scale production of micro/nano-graphene having well-defined geometry, we
attempted to microfabricate graphite by using lithographic method for patterning on highlyoriented pyrolytic graphite (HOPG).
By an ICP plasma etching system (RIE-101iPH, Samco), a HOPG plate (10×10×2 mm) was
etched by using a micro-patterned siloxane islands and micro-patterned Au / Cr islands (3 μm
circle) as masks, in the conditions of ICP power of 100 W, Bias power of 50 W, O2 flow of 1.0
sccm, and process pressure of 0.05 Pa. AFM measurement was performed by using SPA400DFM, Seiko Instruments Inc. with the Si cantilever. SEM images were acquired by using SU8020, HITACHI High-Technologies in the condition of acceleration voltage of 15.0 kV.
As a result of etching with a siloxane mask, it was found that there was almost no change inthe height and shape of the siloxane mask before and after etching, and that siloxane had highetching resistance. However, the lift-off process for miniaturization of siloxane mask was not
successful on HOPG due to the weak interaction between siloxane and the graphite substrate.
On the other hand, gold masks were found to be etched by oxygen plasms in spite of theirchemical inertness. Fig. 1 and 2 show the etching time dependence of the etched depth andsurface composition of gold, respectively, for HOPG with micro-patterned gold masks (3 Pm
in diameter), where the patterned etching is practically ends when the gold mask is completely
removed. After 10 h plasma etching, the array of micro-patterned graphites were finallyobtained.
Au composition (wt%)

Etched depth (nm)

250
200
150
100
50
0
0

200
400
Etching time (min)Fig. 1 Etching time dependenceof the height of graphite pattern

40
30
20
10
0
0

200
400
600
Etching time (min)Fig. 2 Etching time dependence Fig. 3 SEM image ofof Au composition
microfabricated graphite
patterns (diameter : 3μm)

Corresponding Author: Kazuyuki TAKAI
E-mail: takai@hosei.ac.jp- 100 -




2P-28




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- 101 -

3P-1
Control of optical absorption property of PbPc donor film fordevelopment of full-spectra organic photovoltaic cells○Hayato Yoshizawa, Masahiro Kato, Masato Nakaya, and Jun Onoe*
Department of Energy Science and Engineering, Nagoya University, Aichi 464-8603, Japan

Organic photovoltaic cells (OPVs) have been extensively investigated owing to theirfascinating advantages such as flexibility, highly designability, and low fabrication cost.
However, the energy conversion efficiency (η) of OPVs is still ca. 10%, which is much lower
than those (ca. 25% at most) of the conventional Si solar cells. In order to improve the η ofOPVs, it is indispensable to increase both the short-circuit current and open-circuit voltage
simultaneously. In the former case, it is important to understand the elementary processes ofphotoelectric conversion [1-4]. In the present study, we examined the structural and opticalproperties of lead phthalocyanine (PbPc) used as a donor for C60-based OPVs, because PbPc
films exhibit absorption bands in a wide wavelength region of 400-1000 nm.
Heterojunction OPVs composed of indium-tin-oxide (ITO) electrode, PbPc film (40 nm
thick), C60 film (30 nm thick), and aluminum (Al) electrode (100 nm thick) were fabricated in
the same ultrahigh vacuum chamber (base pressure: 2.0 × 10-6 Pa) without air exposure. Then,the external quantum efficiency (EQE) of the OPVs wasmeasured ex situ. Fig. 1 shows (a) the EQE in awavelength range of 400–1000 nm for the OPVs, UVvis-NIR spectra of (b) 40 nm-thick PbPc film (solidline) and 40 nm-thick C60 film (dotted line), and of (c)20 nm-thick PbPc film. As shown in Fig. 1a, three peaks
appear at 450, 672, and 907 nm, which correspond tothe optical absorption peaks for C60 and PbPc films (Fig.
1b). Although the absorption peaks at 742 and 895 nm
are mainly originated from the π-π* transition, theseabsorption bands depend on the film thickness. For
example, the absorption peak at 895 nm appearing for
40 nm-thick PbPc film (Fig. 1b) was not observed for
20 nm-thick PbPc film (Fig. 1c). This is explained by a
mixture of two crystalline phases (monoclinic andtriclinic phases) increasing with film thickness. We will
discuss the optical characteristics of C60/PbPc
heterojunction before and after thermal-induced
crystalline phases transition.
Fig. 1. EQE of C60/PbPc OPV (a) and UV-VisReferences
NIR spectra of C60 and PbPc films (b, c).
[1] S. Ryuzaki and J. Onoe, Nano Rev. 4, 21055 (2013).
[2] S. Ryuzaki and J. Onoe, “Solar Cell Materials, Devices,
Interfaces, and Modeling” (Q. Qiao ed.), CRC Press, Chap. 6, pp.143–166 (2015).
[3] J. Onoe et al., J. Chem. Phys. 147, 2147018 (2017). [editor’s pick][4] M. Kato et al. J. Chem. Phys. 153, 144704 (2020).
*Corresponding Author: Jun Onoe
Tel/Fax: +81-52-789-3784, E-mail: j-onoe@energy.nagoya-u.ac.jp- 102 -

3P-2

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1

2

Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan
Waseda Research Institute for Science and Engineering, Waseda University, Tokyo 169-8555, Japan&DUERQ QDQRWXEHV &17V  KDYH EHHQ H[WHQVLYHO\ UHVHDUFKHG RZLQJ WR WKHLU XQLTXH RQH
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3P-3
Semiconducting carbon nanotube extraction enabled by cellulosic
polymer wrapping○Tomoko Yagi1, Tsuyoshi Kawai 1, Yoshiyuki Nonoguchi 1, 2
1Division of Materials Science, Nara Institute of Science and Technology, NAIST, Takayama, Ikoma,
Nara 8916-5, Japan
2
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, JapanThe selective extraction of semiconducting carbon nanotubes (sc-SWNTs) is highly desired
for the development of next-era electronic and energy devices. Conjugated polymers havemostly been used to selectively disperse sc-SWNTs [1]; however, these polymers are notsuitable for large scale production due to their high production cost. Herein we demonstrate scSWNTs are selectively extracted by using alkyl cellulose. Alkyl cellulose is a sustainable, andenvironmentally friendly compound conformable to large-quantity production. By
systematically investigating the separation condition such as the structure and concentration ofalkyl celluloses, here we demonstrate successful selective extraction. The sc-SWNTs / alkyl
cellulose film shows excellent thermoelectric power factor.
We dispersed SWNTs in tetrahydrofuran (THF) using alkyl cellulose (Fig. 1(a)). Obtained
SWNTs dispersion was used to prepare semitransparent thin film on PET substrates. The doping
level was modulated with a p-type doping reagent, silver bis(trifluoromethanesulfonyl)imide(AgTFSI). UV-Vis NIR spectra indicated that the selectivity of sc-SWNTs changes dependingon the side chain length of alkyl cellulose. Particularly, hexyl cellulose selectively extracted scSWNTs in THF (Fig. 1(b)). This successful separation expectedly relies on the difference ofthe polarizability between sc- and m-SWNTs polymer complexes, which can be modulated by
the side chain length of alkyl cellulose. We found that selectivity also depends on the solvent,polymer concentration and molecular weight, along with SWNT diameter. Successful scSWNTs extraction was also confirmed by thermoelectric transport measurements. Seebeckcoefficient was as high as approximately 100 PV K-1 even in the heavy doping condition (Fig.
1(c)). The films sorted by alkyl cellulose showed ten times lager thermoelectric power factor
than unsorted films.

Figure 1. (a) A chemical structure of alkyl cellulose. (b) UV-Vis NIR spectra of dispersions normalized S11 using
different alkyl cellulose as a dispersant. (c) Thermoelectric properties of film of sorted SWNTs by hexyl cellulose
and conjugated polymer (PFO-BPy), along with unsorted SWNTs dispersed by pluronic F127.
[1] A. Nish et al. Nat. Nanotech., 2, 640-646 (2007).
Corresponding Author: Yoshiyuki Nonoguchi
Tel: +81-75-724-7515
E-mail: nonoguchi@kit.ac.jp- 104 -

3P-4
Investigation of water adsorption on vertically-aligned single-walled carbon
nanotubes by Raman spectroscopy○Masanori Bamba 1, Shu Sato1, Taiki Inoue2, Shigeo Maruyama1, Shohei Chiashi1
1Department of Mechanical Engineering, the University of Tokyo, Tokyo 113-8654, Japan2
Department of Applied Physics, Osaka University, Osaka 565-0871, Japan[1] S. Chiashi et al. Phys. Rev. B, 91, 155415 (2015).
[2] Y. Murakami et al, Chem. Phys. Lett., 377, 49(2003).
[3] Z. Zhang et al, Phys. Rev. B, 81, 165442 (2010).
[4] Y. Murakami et al, Phys. Rev. B, 71, 085403 (2005).
[5] P. T. Araujo et al, Phys. Rev. B, 77, 241403 (2008).
[6] P. T. Araujo et al, Phys. Rev. Lett., 98, 067401(2007).

(7,7)
(7,7)
(8,5)
(8,5)

(16,0)(16,0)(14,1)(14,1)

Intensity (a. u.)

145 cm−1

Previous study shows that water molecules physically adsorb on the surface of isolated andsuspended single-walled carbon nanotubes (SWCNTs) [1] and the adsorbed water layer changes
the SWCNT properties such as the optical transition energy and RBM peak frequency. However,
the observation of the water adsorption layer has been limited in the SWCNT samples with thespecific morphology. In this study, we investigated the vapor pressure and temperaturedependence of water adsorption on the outer surface of vertically-aligned SWCNTs (VASWCNTs) by Raman scattering spectroscopy.
The VA-SWCNTs which were grown by
ACCVD method using cobalt and molybdenum
as the catalyst [2](Fig. 1) were put in a chamberwhere the pressure and temperature arecontrolled. Raman spectra measured with
controlling water vapor pressure at room
temperature (25°C) are shown in Fig. 2. With
increasing pressure, RBM peaks from larger
diameter tubes (ωRBM a 145 cm-1) up-shifted at  
μm
2.6×102 Pa, while the peaks from smaller
diameter tubes ((ωRBM a 181 cm-1) shifted at
Fig. 1 SEM image of VA-SWCNTs.
8.7×102 Pa. This peak shift comes from theadsorption of water molecules on the surface of
VA-SWCNTs, and it suggested that isolated and488 nmsuspended SWCNTs with exposed outer surface
existed in the VA-SWCNT samples [3]. In
addition, the previously reported difference in
3
1.4x10
the RBM spectra of VA-SWCNT samples [4][5]can be understood by considering the adsorption
effects.
2
8.7x102.6x102

1.8 Pa

100

200

−1

300

Raman shift (cm )Fig. 2 RBM peaks at different water vapor
pressures. The red and blue lines indicate
Raman shift in vacuum [1][5] andambient air [6], respectively.

Corresponding Author: S. Chiashi
Tel: +81-3-5841-6407, Fax: +81-3-5841-6408,
E-mail: chiashi@photon.t.u-tokyo.ac.jp- 105 -

3P-5
Self-assembly of two-dimensional structures composed of tetrahedralmolybdenum clusters○Naoyuki Kanda1,2, Zheng Liu3, Motoki Aizaki2, Mina Maruyama4, Susumu Okada4,
Yanlin Gao4, Hisanori Shinohara2, Yasumitsu Miyata1, and Yusuke Nakanishi1,*1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan.
2
Department of Chemistry, Nagoya University, Nagoya 464-8603, Japan.
3
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
4
Department of Physics, University of Tsukuba, Tsukuba 305-8571, JapanThe self-assembly of nanoscale elements into macroscopic structures offers a powerfulstrategy for the bottom-up synthesis of functional materials. Molecular clusters of transition
metal chalcogenides (TMCs) are potential building blocks for such architectures. In particular,
tetrahedral M4 clusters of chalcogenides — whose generalized formula is M4X4, where M is atransition metal and X is a chalcogen — form a variety of three-dimensional (3D) structures via
chemical-cross linkages (Fig. 1a). Depending on their composition and morphology, 3D solids
composed of M4X4 clusters exhibit versatile properties including ferromagnetism, Mott
transition, and superconductivity [1]. The chemical and structural diversity of M4X4 clustersorganized into such 3D structures would open new avenues of research in 2D materials.
However, very few 2D structures are currently available due to the difficulty of preparing
chemically uniform crystals.
Here we report the bottom-up synthesis of layered 2D structures consisting of Mo4S4 clusters
bridged by Cl atoms (Fig. 1b). This methodology extends the vapor-phase reactions employed
to fabricate 1D TMC nanowires [2]. Cross-sectional transmission electron microscopy revealed
the layered structures, in which a plane of Cl atoms is sandwiched between planes comprising
Mo4S4 and Cl4 clusters (Fig. 1c). Significantly, we also demonstrate the isolation of monolayers
inside carbon/boron-nitride nanotubes. Electronic structure calculations suggest that themonolayers should exhibit strong direct bandgap photoluminescence emission.

Fig. 1 a) A schematic of Mo4S4 cluster with 12 Cl ligands, HAADF-STEM images of Mo4S4-based 2D
structures viewed from b) surface and c) cross section.
[1] R. Pocha et al., Chem. Mater. 12, 2882 (2000); C. Vaju et al., Microelectron. Eng. 85, 2430 (2008); M. M.
Abd-Elmeguid et al., Phys. Rev. Lett. 93, 126403 (2004)[2] N. Kanda et al., Nanoscale 12, 17185 (2020); M. Nagata, N. Kanda et al., Nano Lett. 19, 4845 (2019)
Corresponding Author: Y. Nakanishi

Tel: +81-42-677-2498- 106 -

E-mail: naka24ysk@tmu.ac.jp

3P-6
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2- "+" -**1+,%+,*-,-*(-%$'"'3'42)!+!)!('('."*,"('&((*!)!+(-%$%(+&),1(#,+"'",&',"."',".&(+&$ .%&/ -0)&20    
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(**+)('"'  -,!(*  $1+!" %   /$$/'+"#)- 107 -

  0     &"%3P-7
Tuning electronic properties of graphene antidot lattices with truncatedtriangular holes: A First-principles study○Yuta Taguchi, Susumu Saito
Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku,
Tokyo 152-8551, Japan
Graphene antidot lattices (GALs) have been studied theoretically. Previous theoreticalstudies indicate that GAL sometimes has a band gap and the size of band gap is sensitive to theshape and size of holes introduced into the graphene sheet periodically[1,2]. Furthermore,
introducing holes with zigzag edges can change the magnetic property of pristine graphene. For
example, GAL with triangular holes in the same direction has a ferromagnetic (FM) groundstate and GAL with hexagonal holes has an antiferromagnetic (AFM) ground state[3,4].
Introducing holes into pristine graphene should be a promising method to expand the possibilityof its application.
We investigate the electronic properties of graphene with holes in the shape of truncatedtriangles arranged periodically in the framework of the density-functional theory (DFT). There
are two same holes in one supercell and sides of regular triangles face each other [Fig. 1(a)1(c)]. We characterize the system studied by two integers: the hole side length l in units ofpristine graphene lattice constant and subribbon width W in units of C-C bond length [Fig. 1(a)].
To investigate the spin-polarized state of system, the spin degree of freedom is taken into
account. We find that the system has either a nonmagnetic (NM) ground state [Fig. 1(a)] or
antiferromagnetic (AFM) ground state [Fig. 1(b),(c)] depending on l and W. We also find that
the NM state and ferromagnetic (FM) state are energetically stable for (b) and (c), respectively.
Their energy difference from the ground state is less than 5 meV/atom. These results show thatthe magnetic properties of the system can be controlled by changing l and W, being useful for
spintronics applications. In this presentation, electronic structures and band gaps will be also
discussed in detail.
(a)l5, W5(b)l8, W5(c)Fig. 1 Graphene antidot lattices with truncated triangular holes.
[1] M. Sakurai, Y. Sakai and S. Saito, J. Phys: Conf. Ser. 302, 012018 (2011)[2] G. Tang et al., Carbon 76, 348-356 (2014)[3] W. Liu et al., Phys. Rev. B 80, 233405 (2009)[4] M. L. Trolle, U. S. Mφller, and T. G. Pedersen, Phys. Rev. B 88, 195418 (2013)
Corresponding Author: Y. Taguchi
E-mail: taguchi.y@stat.phys.titech.ac.jp- 108 -

l9, W5

3P-8
Two-dimensional electron gas in laterally-assembled WTe atomic wires○Hiroshi Shimizu1, Jiang Pu2, Zheng Liu3, Hong En Lim1, Yusuke Nakanishi1,
Takahiko Endo1, Kazuhiro Yanagi1, Taishi Takenobu2, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
3
Innovative Functional Materials Research Institute, AIST, Nagoya 463-8560, Japan
One-dimensional (1D) transition metal chalcogenides (TMCs) have attracted much attention
lately due to their atomically-thin, wired structures and superior conducting properties. These
wires interact via van der Waals forces, aggregating into 1D crystal of different shapes. By
manipulating the assembled crystal structure, their physical properties can be possibly tuned.
Indeed, metal-semiconductor transition and a crossover from 1D to 3D electronic states havebeen reported for single- to few-wires of WTe [1]. However, relevant studies remain limited.
Recently, we had achieved a scalable growth of long, highly-crystalline 2D and 3D assemblies
of WTe crystals using chemical vapor deposition (CVD) [2]. Such aggregates are expected to
be an ideal system to realize a tunable wire-based electronic system. Using the high quality andlong WTe prepared this way, herein we report the 2D electron gas of laterally-assembled WTe
atomic wires.
The wires were grown on SiO2/Si substrates with a typical length of more than 10 Pm. In/Au
electrodes were deposited onto an isolated WTe bundle by photolithography for measurements(Fig. 1a). Nanoribbon-shape, as-grown crystal comprises highly crystalline WTe wires can beclearly seen in the cross-sectional observation (Fig. 1b), forming thin aggregate with a width of200~400 nm and 5~15 nm in thickness. Subjecting the sample to an applied magnetic field
results in an oscillating behavior at 1.9 K (Fig.1c). This corresponds to Shubnikov-de Haas
oscillation due to oscillatory magnetoresistance. The oscillation period is determined to be 0.08
T-1, yielding the estimated carrier density and mobility of 6.0×1011 cm-2 and 7000 cm2 V-1 s-1,
respectively. More importantly, although the oscillation period decreases as the sample is tilted
with respect to the direction of the magnetic field, the MR curves at each tilt angle, T howevershow identical oscillations when plotted against BcosT (Fig. 1d). These serve a strong evidence
for the realization of 2D electron gas in the laterally-assembled WTe wires, suggesting the useof TMC atomic wires as build blocks to create electronic systemsof different dimensionality.
yyFigure 1 (a) Optical and (b) cross-section HAADF−STEM image of the WTe bundle. Inset: Structure model of a
TMC atomic wire. (c) BcosT−dependent magnetoresistance of the WTe bundle at 1.9 K (B: Magnetic flux density).
[1] J. Deng et al., Nano Lett., 20, 12, 8866-8873 (2020).
[2] H. E. Lim et al., Nano Lett., 10.1021/acs.nanolett.0c03456 (2020).
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp- 109 -

3P-9
High-yield synthesis of MoS2 and MoSe2 nanotubes○Ryoga Tanaka, Yohei Yomogida, Yasumitsu Miyata, Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Raman intensity

Inorganic nanotubes (INTs) composed of transition-metal dichalcogenides (MX2, M = Mo,
W, Nb. X = S, Se) have unique physical properties that are different from 2D MX2. Their
physical properties depend on constituent elements, and thus, development of techniques tosynthesize INTs with a variety of elements is important for both aspects of basic science andapplications. In the case of W-based INTs (e.g., WS2 and WSe2
nanotubes), various synthesis methods including mass production
have been developed [1,2,3]. In contrast, there are few reports on
synthesis of Mo-based INTs (e.g., MoS2 and MoSe2 nanotubes).
This may be due to instability of their precursor molybdenumoxide. Molybdenum oxide is known to be thermally and chemicallyunstable compared to tungsten oxide [4], which makes synthesis
using the oxides as templates difficult. Thus, in this study, to obtainhigh-yield MoS2 and MoSe2 nanotubes, we developed efficient
precursor synthesis and explored the appropriate condition ofchalcogenization.
Molybdenum oxide nanowire precursors were synthesized on
silicon substrates by thermal evaporation, according to the previous
study [5]. Here, we adjusted supplied air gas and synthesis
temperature to efficiently synthesize oxide nanowires. Thereafter,
the obtained nanowire precursor was reacted with S or Se precursor
in Ar/H2 gas. The produced molybdenum oxide nanowires have alength of 3-10 μm and a diameter of about 10-200 nm. Then weapplied chalcogenization on the oxide nanowires. To prevent thedestruction of the nanowire structure during chalcogenization, thechalcogenization reaction was first carried out at low temperature Fig. 1 TEM images of the MoS (a)2
500 °C, followed by high temperature 600-700 °C.
and MoSe2(b) nanotubes.
Fig.1 shows typical TEM images of MoS2 and MoSe2
nanotubes produced through chalcogenization on the oxide
MoS2
MoS2 NTs
MoSe2
nanowires. These nanotubes have layered walls and a hollow
Sicore. The nanotubes have similar morphology to the precursors,
suggesting that chalcogenization took place without destructionof the nanowire structure. As shown in Raman spectra (Fig.2),
the nanotubes show clear peaks of MoS2 and MoSe2, which is
MoSe2 NTs
different from those of molybdenum oxide. This result indicatesthat molybdenum oxide nanowires are successfully converted
to MoS2 and MoSe2 nanotubes. In the poster, we will discuss
the detailed conditions of the synthesis.
100 200 300 400 500 600-1[1] Y. Yomogida et al., Appl. Phys. Express 12, 085001 (2019).
[2] Y. Yomogida et al., Appl. Phys. Lett. 116, 203106 (2020).
[3] M.Serra et al., Nanoscale 11, 8073-8090 (2019).
[4] P.Chithaiah et al., ACS Nano 14, 3004-3016 (2020).
[5] K. Hong et al., Phys. Status Solidi RRL 6, No.2, 86-88 (2012).

- 110 -

Raman Shift (cm )Fig. 2 Raman spectra of the MoS2 andMoSe2 nanotubes.

3P-10Preparation of bipyramidal gold nanoparticle-[C60]fullerene nanowhisker
composites and kinetics study for reduction of 4-nitrophenol○Jeong Won Ko1, Yeon A Son1, Se Hwan Park2, Weon Bae Ko2,3,4
1

Department of Science Education, Graduate School, Dankook University, 152, Jukjeon-ro, Suji-gu,
Yongin-si, Gyeonggi-do 16890, Republic of Korea , 2 Department of Convergence Science, Graduate
School, 3 Nanomaterials Research Institute, 4Department of Chemistry, Sahmyook University, 815,
Hwarang-ro, Nowon-gu, Seoul 01795, Republic of Korea

Bipyramidal gold nanoparticle-[C60]fullerene nanowhisker composites were synthesizedusing C60-saturated toluene, bipyramidal gold nanoparticle solution[1], and isopropyl alcoholby the liquid liquid interfacial precipitation (LLIP) method [2]. The product of bipyramidal gold
nanoparticle-[C60]fullerene nanowhisker composites was characterized by X-ray diffraction,
Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy.
The catalytic activity of bipyramidal gold nanoparticle-[C60]fullerene nanowhisker
composites for 4-nitrophenol reduction was evaluated with ultraviolet-visible (UV-vis)
spectroscopy. The efficiency of reduction for 4-nitrophenol with bipyramidal gold nanoparticle[C60]fullerene nanowhisker composites increased in order of 288 K , 298 K , and 308 K. The
kinetics study confirmed that the reduction of 4-nitrophenol using the bipyramidal gold
nanoparticle-[C60]fullerene nanowhisker composites at different temperatures followed apseudo-first order reaction.
0.0

288 K
298 K
308 K

-0.5
-1.0

ln(C/C0)

-1.5
-2.0
-2.5
-3.0
-3.5

288 K
298 K
308 K
Plot
-0.04846 ± 0.0267 0.03383 ± 0.0180 0.16706 ± 0.07761
Intercept-0.12012 ± 0.0074 -0.22636 ± 0.005 -0.62068 ± 0.0215
Slope
0.981220.99757
0.99402
R-Square (COD)

-4.0
0

1

2

3

4

5

6

Time (min)Fig.1 Graph of ln(C/C0) vs. time at different temperatures for bipyramidal gold nanoparticle -[C60]fullerene
nanowhisker composites catalyzed reduction of 4-nitrophenol by NaBH4.
[1]J. W. Ko et al Fuller. Nanotub. Car. N. 25(12), 710 (2017).
[2] K. Miyazawa et al. Surf. Eng. doi.org/10.1080/02670844.2017.1396779 (2017).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318,
E-mail: kowb@syu.ac.kr- 111 -

3P-11
Growth of single-walled carbon nanotubes using Ir catalyst preparedby dip-coating process○Shu Kondo1, Ai Misaki1, Kamal P Sharma1, Takahiro Saida1, Shigeya Naritsuka1,
Takahiro Maruyama1
1

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

1.Introduction
Single-walled carbon nanotubes (SWCNTs) are substances which are formed by rolling up
graphene, and they are expected for various applications in future. Our group has succeededin growing vertically aligned small-diameter SWCNTs on a SiO2/Si substrate by the alcoholcatalytic CVD (ACCVD) method using an Ir catalyst, which was deposited by an arc plasma
gun [1]. However, the deposition using the arc plasma gun is not suitable for mass production
because it uses a vacuum system. Here, we have attempted to grow SWCNTs using Ir
catalysts, which were prepared by the dip-coating technique containing Ir acetate.
2.Experimental Procedure
After immersing the SiO2/Si substrates in a 0.01 M iridium acetate-containing ethanol
solution, the Ir catalyst was deposited by the dip coating method, where the withdrawal speed
was varied from 0.1 to 0.6 mm/sec. Then, the substrates were annealed at 250 °C for 15 min.
SWCNT growth was carried out in a hot-wall CVD apparatus. The substrate temperature wasraised to 850 °C in an Ar/H2 atmosphere whose flow rate of 100 sccm. Then, ethanol of 500
sccm was supplied into the furnace to grown SWCNTs for 10 min. The samples werecharacterized by FE-SEM and Raman spectroscopy.
3.Results and discussion
Fig.1 shows the results for SWCNTs grown on asubstrate of which the withdrawal speed was 0.1
mm/sec. Figs.1 (a) and (b) show the RBM region andthe high-frequency region in the Raman spectra,
respectively. These shows that SWCNTs withdiameters between 0.8 and 1.0 nm were grown fromIr catalysts. Fig. 1 (c) shows a cross-sectional FESEM image, showing growth of an SWCNT forest.
The thickness of the SWCNT forest was about 0.2
μm. We will discuss the dependence of thewithdrawal speed in dip-coating on SWCNT growth.
Acknowledgments
Part of this research was supported by the private
university research branding project "Meijo
University Brand Building Program by Creating New Fig. 1 Raman spectra in (a) the RBM
Nanomaterials" and JSPS Bilateral International Joint region and (b) the high frequency region,
Research Projects.
and (c) FESEM image of SWCNTs grown[1] T. Maruyama et al. Appl. Surf. Sci., 509 (2020) 145340.
Corresponding Author: S. Kondo
Tel: +81-80-94813507,
E-mail: 203429002@ccmailg.meijo-u.ac.jp- 112 -

from Ir catalysts prepared by the dipcoating.

3P-12Growth of hBN on CNT assemblies and their memristive behavior○Misaki Kishibuchi, Kazuma Shimogami, Hirotaka Inoue, Kyohei Nasu, Tomohiro
Nakagawa, Mitsuaki Maetani, Yuichiro Tanaka, Yasuhiko Hayashi and Hiroo Suzuki
Graduate school of Natural Science and Technology, Okayama University, Okayama
700-8530, Japan
Van-der-Waals (VdW) heterostructure is getting a lot of attention due to its potential todevelop a new electronic device application. Recently, one-dimensional (1D) VdW
heterostructure has been realized by direct growth of two-dimensional (2D) materials such as
hexagonal boron nitride (hBN) and transition metal dichalcogenide (TMDC) on carbon
nanotube (CNT) [1]. Because of its advantage in terms of higher integration density ofheterojunctions than that of conventional 2D VdW hetero junctions owing to its extremely
small size, assembling 1D VdW heterostructure is a reliable way for practical applications.
One possible strategy for assembling a 1D VdW structure is the direct growth ofhomogeneous materials directory on CNT assemblies.
In our research group, we have developed the fabrication technique of bulk-size CNT
assemblies [2]. The CNT sheet and yarn: one of the CNT assemblies, can be fabricated by adry process with the drawable CNT forest grown by precisely tuned chemical vapor
deposition (CVD) (Fig. 1(a)). In this research, we performed
hBN growth directory on the CNT assemblies (sheet andyarn) by conventional powder CVD with a source of
NH3BH3. The heterogeneous growth of hBN on the CNT
sheet was confirmed by UV-vis-NIR spectroscopy, Fouriertransform infrared (FT-IR) spectroscopy, and transmittanceelectron microscopy (TEM).
From electrical transport measurements, we found theclear hysteresis in I-V curves, that is memristive behavior,
with both hBN-grown CNT sheet and yarn (Fig. 1(b)). The
strength of the hysteresis was evaluated with an area ofhysteresis (S) as an indicator. The S showed the tunability
with the growth conditions and device geometry. By thesystematic experiments and structural observations, we
proposed the possible mechanism of memristive behavior
relating to the presence of the amorphous carbon (a-C)
between hBN/CNT heterostructures and disordered structure
Fig. 1: (a)Scanning electron
microscopy (SEM) image ofof hBN layer. The a-C seemingly formed a conductive
CNT yarn. (b)I-V carve
filament channel (CFC) in the disordered hBN layer under ameasuredin hBN-grown CNThigh electric field, resulting in the memristive behavior.
yarn.

[1] R. Xiang, et al. Science 367, 537–542 (2020).
[2] H. Inoue, et al. Carbon N. Y. 158, 662–671 (2020).
Corresponding Author: H. Suzuki
Tel: +81-86-251-8133
E-mail: hiroo.suzuki@okayama-u.ac.jp- 113 -

3P-13Synthesis of high-density vertically aligned carbon nanotubes
by suppressing migration of Fe using Fe/MoxOy catalyst○Mitsuaki Maetani, Hirotaka Inoue, Tomohiro Nakagawa, Kyohei Nasu, Takeshi Nishikawa,
Hiroo Suzuki, Yasuhiko Hayashi
Graduate School of Natural Science and Technology, Okayama University, Okayama
700-8530, JapanTo realize the practical application of carbon nanotubes (CNTs) on the bulk scale, CNT
yarns are fabricated from vertically aligned CNT (VACNT) on a substrate using the spinning
process. Although single CNT has extraordinary physical properties, these are not fullyreflected in those of the CNT yarn due to the presence of an interface between CNTs.
To improve the mechanical and electrical properties of the CNT yarns, high-temperature
growth (>700°C) which can suppress the formation of kinks and defects is necessary. The useof bimetallic catalyst including Mo, having a high melting point, can suppress the migration,
aggregation, and coarsening of the catalyst particles that occur during high-temperature
growth, resulting in the synthesis of dense VACNT[1]. Increasing the density of VACNT withsustaining the long CNTs which can strengthen the fiber entanglement between CNT bundles
is essential for its drawability[2].
In this study, we employed Fe/MoxOy catalyst to achieve homogeneous dispersion of
catalyst particles on a substrate leading to the high-density growth of VACNT. The melting
point of Mo is 2623°C, while that of the typical oxide MoO3 is 795°C. We presumed that thepre-oxidation of Mo would enhance the sufficient particle formation at the CNT growthtemperature. Mo thin film was deposited on a silicon substrate with Al2O3/SiO2 layers using
electron beam evaporation. After being performed oxidization process by annealing thesubstrate in the air atmosphere, Fe thin film was deposited on the substrate. CNTs were grownby cold-wall CVD system in H2/N2 atmosphere with C2H2 as a precursor of CNT. To confirm
the surface morphology of the substrate at the start point of
CNT growth, atomic force microscope (AFM) images ofthe substrate were acquired after the annealing process inthe H2/N2 atmosphere without C2H2 supply. This revealed
that the pre-oxidation of Mo suppressed the coarsening of
catalyst particles as shown in Fig. 1. The results of AFM
analysis indicate that MoxOy was reduced after forming thecatalyst particles and produced pure Mo suppressed thecoarsening of the catalyst particles with its high melting
temperature. The Raman spectra of the CNTs grown with
Fe/MoxOy catalyst showed a high G/D band ratio (~15),
indicating the high crystalline of the CNTs.
[1] E. R. Meshot et al., Carbon 159, 236-246 (2020).
[2] H. Inoue et al., Carbon 158, 662-671 (2020).
Corresponding Author: Yasuhiko HAYASHI
Tel: +81-86-251-8230
Email: hayashi.yasuhiko@okayama-u.ac.jp- 114 -

Fig. 1. AFM images of surface of
substrate after annealing in
H2/N2/nitrogen atmosphere (a) withand (b) without pre-oxidation ofMo.

3P-14
Electrolyte effects on electrochemical doping ofsemiconducting carbon nanotube films○Satoki Taniguchi1, Tsuyoshi Kawai1, Yoshiyuki Nonoguchi1,21Division of Materials Science, Nara Institute of Science and Technology, Nara 630-0192,
Japan
2
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 6068585, Japan

Semiconducting single-walled carbon nanotubes (sc-SWNTs) are expected as a major
material in next-generation electronics, and their doping is an essential technology forcontrolling charge transport properties. It is well known that p-type and n-type transport in
SWNTs can be tuned by using oxidizing and reducing reagents, which is utilized in the
fabrication of electronic and energy devices. Its reliability are current roadblocks to further
applications involving practical requirements (e.g. precise control of electronic levels, andlong-term stability). We have recently proposed that the stability of doped SWNTs depends onelectrostatic interactions with counterions [1], while its quantitative verification using a highpurity sc-SWNTs has yet to be explored.
We apply the electrochemical quartz crystal microbalance (EQCM) in the analysis ofchemical doping reactions. The mass change upon oxidation doping was investigated from thecorrespondence between the response current and the frequency by EQCM. sc-SWNT
electrodes (purity Ӎ99%) allowed for reliable cyclic voltammetry about several organic
electrolyte solution (e.g. tetrabutylammonium salts with BF4-, PF6-), where a bias sweep
resulted in simultaneous increases in current and mass about +0.4 V corresponding to thevalence band edge of sc-SWNTs. In addition, acomparison with counter anions showed thatsoft anions such as fluorinated salts are
required for the observation of a capacitanceand mass increase upon p-type doping (Fig.1).
We will discuss effects of shape of counter
anions, charge density and hydrophobicity of
sc-SWNTs for turning electrochemical doping
properties.
[1] Y. Nonoguchi et al. J. Mater. Chem. A, 2018, 6, 21896–2190

Corresponding Author: Y. Nonoguchi
Tel: +81-(75)-724-7515
E-mail: nonoguchi@kit.ac.jp- 115 -

3P-15Visualization of thermal transports on bundled carbon nanotubes
by monitoring phase transition of tin nanoparticles○Hiromu Hamasaki1, Takumi Kawase1 and Kaori Hirahara2
12

Dept. of Mechanical Engineering, Osaka University, Osaka 565-0871, Japan
Dept. of Mechanical Engineering and Center for Atomic and Molecular Technologies,
Osaka University, Osaka 565-0871, Japan

Thermal management based on carbon nanotubes (CNTs) is a fascinating topic because of
their excellent thermal conductivity [1]. However, thermal conductivity of macroscopic
assemblies of CNTs is significantly decayed mainly due to numerous interfaces between CNTs.
In order to investigate the difference of the thermal conductivity between intra and inter CNTs,
we focused on the bundles of single-walled carbon nanotubes (SWCNTs) and visualized
thermal transport on it by monitoring the evaporation of gold nanoparticles as temperature
markers [2]. However, this method cannot be applied to the metal nanoparticles forming surface
oxide layer, and hence observable temperature range is limited. Moreover, the markers cannot
be utilized repeatedly. We investigate the visualization of thermal transport by utilizing solidliquid phase transition, instead of the evaporation.
Figure 1(a) shows a transmission electron microscope (TEM) dark-field image of the initialstate of the bundle. Most of the particles show weak contrast, whereas several particles
satisfying Bragg condition show strong white contrast. With increasing Joule heat generated atcontact point, the particles near the contact point melted and showed intermediate contrast. As
shown in Fig. 1(b), significant anisotropy for thermal transport between parallel andperpendicular direction to the bundle was successfully visualized.
This work was supported by JST CREST Grant Number JPMJCR17I5, Japan.

Figure 1 Dark field TEM images of a SWCNT bundle decorated with Sn particles. Applied voltage isincreased (a) to (b).
[1] E. Pop et al., Nano Lett. 6, 96-100 (2006)
[2] H. Hamasaki et al. the 59th FNTG General Symposium, Sept. 16-18, 2020, online virtual symposium.
Corresponding Author: H. Hamasaki
Tel: +81-6-6879-7307
E-mail: hamasaki@ne.mech.eng.osaka-u.ac.jp- 116 -

3P-16

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- 117 -

3P-17
Reflection and Absorption Properties of Microwave Absorbers Made by
SWNT-Cellulose Composite Paper
Weni Yulistia, Tetsu Mieno
Department of Physics, Shizuoka University, Shizuoka 422-8529, Japan

Recently, development of composite materials using CNTs and polymers is actively
studied [1]. In this work, preparation of CNTs/cellulose composite papers and their electricalconductivity has been studied. And, good electromagnetic interference (EMI) shields have beendeveloped. Singlewalled nanotubes (SWNTs) “ZEONANO” provided by Zeon Nano Company(average diameter = 3-5 nm, length in forest = 100-600 μm, and purity >99%), and multiwalled
nanotubes (MWNTs, FT-9000) provided by CNano Technology Company (outer diameter =10-20 nm, inner diameter = 3-10 nm, length = 10-30 μm, and purity >95%) are used to produce
CNTs/cellulose composite papers (sample area 23 cm x 17.5 cm, thickness 0.2 mm) as shownin Fig. 1. For the eco-friendly process, NTs, pulp, and gelatin are mixed well to make the sheets[2]. The performance of the SWNTs and MWNTs cellulose-composite papers are studied for
8.9 w%, 13 w%, and 17 w% of CNTs. Their reflection and absorption of microwave properties
are measured by a microwave transmitter of frequency 10.5 GHz (ߣ ൎ 3 cm) and emission
power ܲఓ ൌ 10 mW. Herein, it is found significant differences in EMI shielding effectivenessas shown in Fig. 2. The maximum values of EMI shielding by the MWNTs is 38.28 dB(ͳ‫ିͲͳݔ‬ସ ) on 17 w% of MWNTs. On the other hand, SWNTs of 8.9 w% has shown EMI
shielding of 52.56 dB (ͳ‫ିͲͳݔ‬ହ ) and it is 75.15 dB (ͳ‫ ) ଼ିͲͳݔ‬by 17w% of SWNTs which aregood as electromagnetic wave shieldings. Overall, the SWNTs composite shows much lower
transmission and reflection properties than the MWNTs composite. The shields do not generate
dusts and particles, have flexibility and toughness. Electric registers, electric heating sheets,
electromagnetic wave (EMW) shields, EMW polarizers, pyramid type EMW absorbers asshown in Fig. 3 could be prepared.
Reflection

Transmission

500

MWNT

100

SWNT

10

1

Copper

0.1

400

300

SWNT

200

100

MWNT
0

0


Fig. 3 Photo of a pyramid
type MW absorber madeby NT composite paper.

In case of a Cu plate : 670 mV

Without sheet : 1100 mV
Reflected Wave Intensity (mV)Fig. 1 Photo of a SWNT
composite paper.

Transmitted Wave Intensity (mV)

1000

5

10

15

SWNT/MWNT w% Content

20

0



5

10

15

SWNT/MWNT w% Content

Fig. 2 The microwave absorption and reflection measurement of the SWNT
composite papers and MWNT composite papers.

[1] M. Imai et al. “Highly strong and conductive carbon nanotube/cellulose composite paper”, Composites, 70(2010).
[2] K. H. Maria, T. Mieno, “Production and Properties of Carbon Nanotube/Cellulose Composite Paper”,
J. Nanomaterials, 2017, 6745029 (2017).
Corresponding Author: Y. Weni

E-mail: weniyulistia2@gmail.com- 118 -

20

3P-18             ○% &# "
# "##$#  %$"#!  & "$$ #! 
""$$! apan
Aerogels are highly porous materials obtained by removing the solvent inside wet gels in asupercritical condition (so-called supercritical drying), where capillary force is substantiallysmall and volume shrinkage of the gels caused during solvent evaporation is strongly
suppressed. The characteristic properties of silica (SiO2) aerogels, which are one of the mostcommon aerogels, are lightweight, high specific surface area, good visible light transparency,
low thermal conductivities and so forth. In particular, their thermal conductivities are thelowest among solid materials, and thus potential applications such as thermally insulating
materials have been widely investigated. However, the poor mechanical properties are criticalissues for aerogel applications, and numerous research on the reinforcement of aerogels has
been conducted so far. As one of the common strategies for improving their mechanical properties, organicinorganic hybridization has been frequently adopted in the field of aerogels. Kanamori et al.,reported that polymethylsilsesquioxane (PMSQ, CH3SiO3/2) aerogels exhibited superior
flexibility and resilience against compressive deformation,[1] while retaining comparably low
thermal conductivities to those of pure silica systems, achieved by precise control of formed
pore structure. Incorporating organic moieties into pure inorganic matrix results in higher
flexibilities. However, even for the above PMSQ aerogels, there are still a lot of problems
concerning mechanical properties such as weakness against bending or tensile deformation. In this study, our interest has been focused on the incorporation of the superior mechanicalproperties of carbon nanotubes (CNTs) into organic-inorganic hybrid aerogels. Using asurfactant as both a dispersant for singlewalled CNTs and a control agent for pore
structure of PMSQ matrix, we havesuccessfully fabricated CNT/PMSQ
aerogel composites (shown in Fig. 1).
The obtained composite aerogels
exhibited flexible but more resilientFig. 1 Appearance of CNT/PMSQ composite aerogels.
behavior than that of PMSQ.
Moreover, thermal stability in an air atmosphere has been improved by the incorporation of
CNTs. Further detailed properties such as pore structure will be presented in this presentation. !" $"!
Corresponding Author: T. ShimizuTel: +81-29-861-5712
E-mail: shimizu-t@aist.go.jp  - 119 -

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3P-20Synthesis and properties of carbon quantum dots using woody biomass.
○Takaki Yoda1 and Hironori Ogata1
2

1
Department of Chem.Sci. and Technol., Hosei University, Tokyo 184-8584, Japan
2 Research Center for Micro-Nano Technology, Hosei University, Tokyo 184-8584, Japan

Carbon quantum dots (C-QDs) are one of the nanomaterials that have attracted much attention
in recent years. C-QDs have many advantages over conventional semiconductor quantum dots
and organic dyes, including chemical stability, dispersibility, fluorescence properties,hydrophilicity, and high resistance to photodegradation [1]. Currently, there are two main
synthesis approaches for the preparation of C-QDs; "top-down" and "bottom-up" approaches.
In the top-down approach, large carbon materials are decomposed by arc discharge, laser
ablation, or chemical oxidation [2]. On the other hand, the bottom-up approach is synthesis ofCQDs create carbon molecules via precursors such as the hydrothermal method [3], pyrolysis
method, and the microwaves method [4]. These methods have been reported to havecomplicated procedures, relatively large particle sizes (30-50 nm), and low quantum yields offluorescence.
Recently, biomass has been attracting attention as a material for C-QDs. It has been reported
that C-QDs have been synthesized from organic materials such as soy milk[5] and plant seeds[6]. These studies use a simple process of heating only, and the synthesis can be done at a low
cost.
In this study, C-QDs were synthesized by pyrolysis method using biomass such as lignin andcellulose Nano Fiber (CNF) as raw materials, and their structures and optical properties were
investigated. Fig.1 shows TEM images of the C-QDs from lignin(a) and CNF(b).
Detailed results about their structures and optical properties will be reported at the meeting.

Fig.1 TEM images of C-QDs ((a) from lignin,(b) from CNF).

References:[1] Wang,Y. et al., J.Mater.Chem.C. 2,6921(2014).
[2] Zhao,Q.L. et al., Chem.C. 41,5116(2008).
[3] Pan,D. et al., Adv.Mater. 22,6,734(2010).
[4] Liu,R. et al., J.Am.Chem.Soc. ,133,39,15221(2011).
[5] Chengzhou,Z. et al., Chem.C. 48,9367(2012).
[6] Akansha,D. et al., Sci.Rep. ,9,14004(2019).
Corresponding Author: H.Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 121 -

3P-21 

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- 123 -

3P-23
Effect of iron ion beam irradiation on MoS2 fluorescence○Takumi Hidaka1,2, Tomoaki Nishimura2, Kazuyuki Takai1,2
1Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584. Japan
2
Research Center for Ion Beam Technology, Hosei University, Tokyo 184-8584. Japan

300

Intensity (arb. unit)

Intensity (arb. unit)

In 2D materials, defects and impurities significantly affect the electronic properties comparedto 3D materials due to their low-dimensional structure. Meanwhile, ion beam implantation is
one of the methods that can quantitatively and reproducibly introduce defects and impurities
into materials. We can maintain the maximum implantation ion distribution on 2D materials byusing a sacrificial layer [1]. The effect of the chemical properties of the implanted ion is notwidely known yet in spite of many reports on the ion-dose dependence in of properties 2D
materials. In this study, Fe+ which is a magnetic impurity that can cause spin scattering wereintroduced by ion beam irradiation into MoS2 as a 2D material in which fluorescence strongly
correlates with the degree of freedom of spin. The irradiation effects on structural and electronic
properties were investigated using Raman spectroscopy and Photoluminescence (PL).
Cr / NaCl of 10 nm / 250 nm was deposited as a sacrificial layer on the single-layer MoS2
obtained by the cleavage method on a SiO2 / Si substrate. The film thickness of the sacrificial
layer was optimized using Monte Carlo simulation for Fe+ distribution by SRIM2013. Fe+
irradiation to the sample was performed at an acceleration voltage of 200 keV with a dose of1012 cm-2. Raman spectroscopy and PL were measured using a spectrometer (LabRAMHR,
Horiba).
With Fe+ irradiation, no significant change in shape was observed on the E12g and A1g peaks
characteristic of the Raman spectrum of MoS2 (Fig. 1). This confirms that MoS2 maintains its
fundamental crystal structure even after Fe+ irradiation. The PL spectra of MoS2 consisting ofA and B peaks, correspond to the transitions to two spin-subbands, showed a low energy shiftof the A peak after Fe+ irradiation (Fig. 2). The low energy shift of the A peak indicates ndoping of MoS2 by Fe+ irradiation [2], which was not observed in previous studies on Ar+
irradiation [3]. Moreover, A peak appears with a long tail in the lower energy side after theirradiation. This indicates that the introduction of defects in MoS2 causes additional defectlevels with various energy eigenvalues in the gap. In addition, the increasing of B peak intensity
suggests that the introduced Fe+ caused spin-dependent relaxation in MoS2.

1012 cm-2
A1g

E12g

Pristine
400

Raman shift (cm-1)

500

1.5

Fig. 1 Raman spectra for Feͻ irradiated MoS2
before and after irradiation of Fe+ 1012 cm-2
[1]Y.Nakamura et al, FNTG Symposium (2019)[2] S. Mouri et al, Nano Lett (2013)[3]Y. Zhao et al, RPGR (2019)- 124 -

Pristine

1012 cm-2
1.8

A

B

Energy (eV)2.1

Fig. 2 PL spectra for Feͻ irradiated MoS2
before and after irradiation of Fe+ 1012 cm-2

3P-24
Building of Platforms to Explore Transport Dynamics of Excitons andTrions in Monolayer Transition Metal Dichalcogenides○Mengsong Xue1, Yuya Murai1, Shaochun Zhang1, Toshinori Shirafuji1, Ryo Kitaura1
1

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan

An exciton is a hydrogen-like quasi-particle, where the electrons in the conduction band andholes in the valence band bind together due to the Coulomb interaction. The exciton binding
energies in monolayer transition metal dichalcogenides (TMDs) can reach hundreds ofmillielectronvolts due to reduced dielectric screening in the atomically thin limit—as much as
two orders of magnitude larger than in conventional semiconductors such as silicon or GaAs
[1]. On top of a neutral exciton, both trion (charged exciton) and biexciton (exciton molecule)states have been extensively studied both experimentally and theoretically in TMDs [2,3].
Besides, these excitonic states possess the information of valley degree of freedom. Therefore,monolayer TMDs provide an excellent platform to explore exciton physics and valley physics.
Understanding the spatial motion of optically generated carriers such as excitons and trions
after generation and before recombination is of central importance for both fundamental
research and optoelectrical applications. However, the environmental effects such as surface
roughness, charged impurities and contaminants prohibit the exploration of the intrinsic
properties of monolayer TMDs. It is essentially needed to build a high-quality material platform
to exhibit intrinsic transport dynamics of excitons and trions. In this work, we fabricatedhexagonal boron nitride (hBN)-encapsulated monolayer TMDs with super clean and flat
surfaces and corresponding field-effect transistors (FETs) to explore the transport behaviors of
excitonic carriers. The details will be discussed during the presentation.

Fig. 1 Optical image (a) and AFM image (b) of a hBN/WSe2/hBN heterostucture[1] Chernikov. A et al. Phys. Rev. Lett. 113, 076802 (2014).
[2] K. F. Mak et al. Nat. Mater. 12, 207 (2013).
[3] You. Y et al. Nat. Phys. 11, 477–482 (2015).
Corresponding Author: R. Kitaura
Tel: +81-52-789-2477, Fax: +81-52-747-6442
Web: http://nano.chem.nagoya-u.ac.jp/
E-mail: r.kitaura@nagoya-u.jp- 125 -

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3P-26




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- 127 -



3P-27
Effects of liquid phase oxidation of Nanodiamond surface
on its water dispersibility and photo-absorption○Takuma Tsuji 1, and Kazuyuki Takai1,2
1Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584. Japan

2

Research Center for Micro-Nano Technology, Hosei University, Tokyo 184-0003, Japan

Surface chemical modification of Nanodiamond (ND) is an important strategy to tune its
electronic / chemical properties due to its large specific surface area. Especially, oxidation
introduces the large electric polarization on the surface of ND, which could change electric
screening of exciton in the photo absorption, carrier density, hydrophilicity, so on, dependingon the chemical form of oxygen functional groups. Recently, selective introduction of oxygencontaining functional groups by using different oxidation reagent is reported for graphene inliquid phase [1]. In this study, effects of liquid phase oxidation of ND on its electronic andchemical properties are evaluated in terms of water dispersibility and photo absorption.
NDs repeatedly oxidized once to three times using the Brodie method [2] is labeled as BND1,
BND2, BND3, respectively. UV-vis and the concentration of dispersed NDs are measured bya spectrometer (V-770, JASCO), and a total organic carbon (TOC) analyzer (TOC-V CSN,SHIMADZU), respectively.
Both of the absorbance shown in Fig. 1 and the concentration of dispersed NDs show in Fig.
2 (a) increase as increasing in oxidation cycles. These results indicate that the graphene likeshell on the ND surface was attached with oxygen-containing functional and / or removed byoxidation, resulting in enhancement of the dispersibility of NDs. The absorption coefficientsfor NDs show in Fig. 2 (b) were calculated from the absorbance at 660 nm and ND
concentration. As the cycle of oxidation increases, the concentration of dispersed NDs increases
and the absorption coefficient decreases.
From these results, the absorption at 660 nm is attributed to the plasmon excitation of thegraphene like shell on the ND surface. As the destruction of π-conjugation or removinghydrophobic graphene by oxidation, the concentration of dispersed NDs increases but the photoabsorption decreases. [1] K. Tajima, et. al, Polyhedron, 136, 155 (2017)

Absorbance

0.25

BND3
BND2
BND1
ND

0.2
0.15
0.1
0.05
0
210

310
Wavelength (nm)410

Absorption Carbon
coefficient cocentration-1(L mol-1 cm-1) (mg L )[2] M. R. Karim, et. al, J.Phys.Chem. C 120, 21976 (2016)

10

(a)

5
0

(b)

10
0
ND

BND1 BND2 BND3

Fig. 2 Carbon concentration and Absorption
coefficient of NDs

Fig. 1 UV-vis spectra for ND and BNDs

- 128 -

3P-28Do Elementary Diamond Nanoparticles Aggregate intheir Aqueous Colloidal Solutions by just Diluting with Pure Water?
○ Masaya Nemoto1,2, Shusuke Ando1, Yuho Itabashi1, Tomohito Obata1, Daiki Ayai1,
Nagito Haga1, Kaito Hiruta1, Toshihiko Tanaka1,2, Yasuhiro F. Miura3, Tetsuya Aoyama2,
Kazunori Miyamoto4, Atsuya Muranaka2, Masanobu Uchiyama2,4, Eiji Osawa5
1

Department of Chemistry and Biochemistry, National Institute of Technology,
Fukushima College, 30 Aza-nagao, Tairakamiarakawa, Iwaki, Fukushima, 970-8034, Japan
2
Elements Chemistry Laboratory, RIKEN CPR ,2-1 Hirosawa, Wako, Saitama, Japan
3
Hamamatsu University School of Medicine, 1-20-1 Handayama,
Higashi-ku, Hamamatsu City, Shizuoka, Japan
4
Graduate School of Pharmaceutical Sciences, the University of Tokyo,
7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan
5
Nano Carbon Research Institute Ltd., Asama Research Extension Center,
Shinshu University, 3-15-1 Tokida, Ueda, Nagano, JapanOne enigmatic property of elementary diamond nanoparticles (EDIANs) is diluting
aggregates in their aqueous solutions.1 However EDIANs sediment with trace ions throughstrong interaction and we have to consider that trace carbonate or bicarbonate ionscontaminate pure water and that they make them aggregate when diluting EDIANs solutions.
So do EDIANs aggregate in their aqueous colloidal solutions just by diluting? Wedemonstrate here that our recent
experiments under nitrogen atmosphere(O2<0.2%) show the diluting aggregation isunnoticeable.
One aspect of the interaction is that with
the ions in biological organs with respect totheir applications for drug delivery
systems.2 We consider that EDIANs should
aggregate with ions in the organs and thatthe aggregates containing drug molecules
will be delivered there.
We diluted nanodiamond(ND) solutions
 NanoAmando@, NanoCarbon Research
Figure 1. DLS size measurements of ND solutions
Institute Ltd., containing EDIANsfrom diluted with water or aqueous salt solutions shown in
2.5wt.% with ultrapure water in the the square.1 Samples are prepared in the N2 atmosphere
atmosphere and their aggregation do not except  cases.
take place from 0.5 to 2.5wt.%, while ittakes place from 1wt.% in air. Hence, the difference shows that the contaminants from air
induce the diluting aggregation from 0.5 to 1 wt.%. Most probable contaminants are carbonate
or bicarbonate ions from air; those from sodium carbonate induce sedimentation at lower
concentration than sodium chlorides. We consider that the sensitive aggregation by trace ionscan be attributed to the large multipolar electric charge3 of EDIANs.
[1]N.O. Mchedlov-Petrossyan, N. N. Kamneva, A. I. Marynin, A. P. Kryshtal, E. Osawa, Phys. Chem. Chem.
Phys., 17, 16186 (2015); [2]E.K.Chow, X.-Q. Zhang, M. Chen, R. Lam, E. Robinson, H. Huang, D. Schaffer, E.
Osawa, A. Goga, D. Ho, Sci. Trans. Med., 3, 73 (2011); [3]A. S. Barnard, E. Osawa; Nanoscale 6, 1188 (2014).
Corresponding Author:Toshihiko Tanaka / Tel: +81-246-46-0810 / E-mail: ttanaka@fukushima-nct.ac.jp- 129 -







Author indexA
Abe, Rikuto
Abe, Ryo
Abe, Yuho
Adachi, Yusuke
Ago, Hiroki
Aizaki, MotokiAji, Adha sukma
Ajiki, Hiroshi
Ajiro, Hiroharu
Akamatsu, Takatoshi
Akasaka, Takeshi
Akino, Kosuke
Akita, Seiji
Ando, Hideo
Ando, Shusuke
Ando, Tsuyoshi
Anisimov, Anton
Aoyagi, Shinobu
Aoyama, Tetsuya
Araki, Tsutomu
Arie, Takayuki
Asaka, Koji
Asaka, Toru
Ayai, DaikiE*1P-14, 2P-16
1-3*1P-18*1P-23
2P-17
3-1, 3P-5
3P-19
2P-20
2P-1
1P-6
2P-11
3-5
1P-23, 3-11
*1-7
3P-28
2P-1
1P-12
1-8, 1P-11
3P-28
2P-22
1P-23, 3-11
1-5
3-2
3P-28

B
Bahramy, Mohammad saeed
Bamba, Masanori
Banno, Takashi
Baranov, Alexader
Barnard, Amanda
Barnes, Stewart edward
Bevan, Kirk h.
Bhattacharya, Maireyee
Bin mohd nasir, Mohd aidil
amin

1P-9
*3P-4
2P-19
2P-23
2-6
1P-9
2P-5
1-3
1P-24

C
Canton vitoria, Ruben
Chae, Sangwoo
Chen, GuohaiCheng, Guoqing
Chiashi, Shohei
Chikaarashi, Itsuki

2P-25
2P-26
1P-13
*1P-3
1P-4, 1P-12, 1P-28,
2P-14, 3P-4
3P-2

D
Date, Hiroki
Demise, Ayaka
Dewey, Oliver S.
Dong, Yu
Dutta, Sudipta

*1P-4
*2P-1
2I-1, 2I-2
1P-6
3P-6

Eda, Junko
En lim, HongEndo, Takahiko

1P-15, 2P-17
1P-10
1P-8, 1P-10, 2P-4,
2P-6, 2P-10, 3P-8

F
F. miura, Yasuhiro
Fortner, Jacob
Fu, Jianwei
Fujigaya, Tsuyohiko
Fujii, Takenori
Fukumoto, Keisuke
Fukushima, Tomohiro
Furukawa, Makoto
Futaba, Don

3P-28
3-7
*2P-27
1P-16, 3P-16
1P-4
2P-12, 2P-28, *3P-26*3P-21
2P-11
1P-13

G
Ganesan, PandianGao, Yanlin

2-4
2-2, 3-1, *3-3, 3P-5

H
Habara, Ren
Hada, Masaki
Haga, Nagito
Haga, Taishi
Hamano, Ryo
Hamano, Tsuyoshi
Hamasaki, Hiromu
Hanayama, HirokiHara, Masanori
Harano, Koji
Hashimoto, Satoru
Hashimoto, Takeshi
Hata, Kenji
Hatanaka, Miho
Hatomoto, Riku
Hayamizu, Yuhei
Hayashi, Keita
Hayashi, Tatsuhiro
Hayashi, Yasuhiko
He, Xing
Headrick, Robert j.
Hidaka, Takumi
Hirahara, Kaori
Hirao, Toshio
Hirobe, Genki
Hirota, Kazutoshi
Hirotani, Jun
Hiruta, Kaito
Hisama, Kaoru
Honma, Chishu
Hosokawa, Yuuya
Huang, Junwei
Hung, Nguyen T.

- 130 -

*2P-8
1-1
3P-28
2P-5
3-8
2P-20
1P-27, *3P-15*2-7*2P-19
2-7
2P-15
2P-15
1P-13, 3P-18
2P-12*2P-15
1P-7, 3-9
3P-16
1S-2
1-1, 1P-20, 3P-12, 3P-13
*3-10
2I-1
*3P-23
1P-27, 3P-15
2P-20
2P-27
2-5
2P-2
3P-28
1P-12, *1P-28
1P-7, *3-9
*2P-18
1P-6
2-1, 3-12

I
Ichinose, Yota
Ideue, Toshiya
Ieda, Jun
Iizumi, Yoko
Ikuhara, Yuichiro
Imamoglu, Atac
Inoue, Hirotaka
Inoue, Taichi
Inoue, Taiki
Inoue, Yoku
Inoue, Zen
Irisawa, Toshifumi
Ishi-hayase, Junko
Ishiguro, Yasushi
Ishii, Akihiro
Ishii, Satoshi
Ishikawa, Takahiro
Ishimaru, Ryoya
Ishimaru, Saya
Ishizaka, Kyoko
Islam, Md shafiqul
Itabashi, Yuho
Iwasa, Yoshihiro
Izumi, Tatsuma

1-2, 2I-2, *2P-16
1P-6
1P-9
2-5
1P-12
1I-2
1-1, 1P-20, 3P-12,
3P-13
3-11
1P-4, 1P-12, 2P-14,
3-7, 3P-4
1S-2*2P-23
2P-6
2P-3
2P-23, 2P-27
3-6, 3-7
2P-20
2P-20
2P-14
*1P-19
1P-9
3-12
3P-28
1P-6, 1P-9, *1T-1*1P-1

JJarillo-herrero, Pablo
Jeon, Il
Jiang, Hua

2I-3
1-6, 3-4, 3-5
2I-5

K
Kako, Masahiro
Kanda, Naoyuki
Kaneda, Masahiko
Kaneko, Takeshi
Kaneko, Takuhei
Kaneko, Toshiro
Kasama, Yasuhiko
Kashima, Taiga
Katagiri, Atsuhiro
Kataura, Hiromichi
Kato, Masahiro
Kato, Toshiaki
Kato, Yuichiro k.
Kauppien, Esko
Kauppinen, Esko
Kauppinen, Esko.i.
Kawachi, Kazuhiko
Kawachi, Ryo
Kawahara, Kenji
Kawai, Tsuyoshi
Kawase, Takumi
Khaniya sharma, Aliza
Kim, Jaeho

2P-11
3-1, *3P-5*2P-4, 2P-6
2-3
*2P-26
3-10
1P-11
1P-19
*1P-15
1P-19
3P-1
3-10
3-6, 3-7
1P-4
1P-12, *2I-5, 3-4
3-5
1P-11
2P-19
2P-17
2P-1, 3P-3, 3P-14
3P-15
3-2
1P-13

Kishibuchi, Misaki
Kishimoto, Shigeru
Kitabatake, Daiki
Kitamura, Sota
Kitaura, Ryo
Ko, Jeong won
Ko, Weon bae
Kobashi, Kazufumi
Kobayashi, Akari
Kodama, Takeshi
Koga, Yasumasa
Komai, Takaha
Komatsu, Naoki
Komatsu, Natsumi
Kondo, Riku
Kondo, Shu
Kondo, Takahiro
Konishi, Teruaki
Konno, Yui
Kono, Junichiro
Kozawa, Daichi
Kroner, Martin
Kumamoto, Akihito
Kumari, Nikita

1P-20, *3P-12
2P-3*1P-11
1P-6
2P-24, 2P-25, 3P-24
3P-10
3P-10
*2-5, 2-8
1P-4, *2P-14
2P-12
2-5
3P-21
1P-3
2I-1, 2I-2
*1P-22
2P-13, *3P-11
*3S-1
2P-20
*1P-2
1-2, 1P-15, *2I-2
*3-7
1I-2
1P-12
1-3

L
Lee, PhilipLi, Mochen
Li, YanLim, Hong en
Lin, Hao-shengLin, HaoshengLin, Yung-changLiu, Zheng

3-4
*1-4
*1I-1
1P-8, 2P-4, 2P-6,
2P-10, 3P-8
1-6, 2P-15, 3-5
2P-26
2-3
3-1, 3P-5, 3P-8

M
Ma, Yue
Machida, Tomoki
Machiya, Hidenori
Maeda, Yutaka
Maekawa, Sadamichi
Maetani, Mitsuaki
Manzhos, Sergei
Maruyama, Mina
Maruyama, Shigeo
Maruyama, Takahiro
Masubuchi, Satoru
Matsuda, Kazunari
Matsunaga, Yuki
Matsuo, Yoshiaki
Matsuo, Yutaka
Matsuoka, Hideki
Matsuoka, Yuya
Mieno, Tetsu- 131 -

1-6
2P-7
3-6
1P-2, 2P-11
1P-9
3P-12, *3P-13
1-6*1-10, 1P-28, 2-2,
3-1, 3P-5
1-6, 1P-4, 1P-12,
1P-28, 2P-14, 3-4,
3-5, 3-7, 3P-4
2P-13, 3-2, 3P-11
2P-7
2P-9
*2P-2
1P-22
1-6, 2P-15, 2P-26, 3-5
1P-9
1-2, 1P-15
3P-17

Mineyama, Aoi
Misaizu, Fuminori
Misaki, Ai
Miwa, Kazuhira
Miyamoto, Kazunori
Miyashiro, Daisuke
Miyata, Yasumitsu
Miyauchi, Yuhei
Morimoto, Takahiro
Morishita, Shigeyuki
Moriya, Rai
Motai, Kazunori
Mouri, Shinichiro
Mukai, Yutaka
Murai, Yuya
Murakoshi, Kei
Muranaka, Atsuya

2P-28
1P-11
3P-11
*1-8
3P-28
*3-8
1P-8, 1P-10, 1P-20,
1P-27, 2P-4, 2P-6, 2P-10,
3-1, 3P-5, 3P-8, 3P-9
2P-9
1P-6, 2-5, 2-8, *3S-2
2-3
2P-7
1P-7
2P-22
2P-12
2P-24, 3P-24
3P-21
3P-28

N
Nabiev, Igor
Nagai, Kohei
Nagai, Yukiko
Nagano, Mai
Nagashio, Kosuke
Nagatomo, Mika
Nagaya, Hiroki
Naito, Hibiki
Nakagawa, Rei
Nakagawa, Tomohiro
Nakagawa, Yuji
Nakajima, Hideaki
Nakamura, Eiichi
Nakamura, Kenta
Nakamura, Masakazu
Nakamura, Taichi
Nakamura, Yoshiki
Nakanishi, Yusuke
Nakano, Masaki
Nakao, Yoshihide
Nakashima, Naotoshi
Nakaya, Masato
Namiki, Katsuya
Naritsuka, Shigeya
Narituka, Shigeya
Nasu, Kyohei
Nemoto, Masaya
Nishida, Shintaro
Nishidome, Hiroyuki
Nishikawa, Takeshi
Nishimura, Tomoaki
Noda, Suguru
Nonoguchi, Yoshiyuki
Nugraha, Ahmad r. t.
Numata, Shunsuke

2P-23
2P-17
*1P-16*1P-27
3P-6
1P-4
3-5
*1P-8
1S-2
1-1, 3P-12, 3P-13
1P-6
2-8
2-7
1P-16
1-3
2P-20
1P-7
1P-8, 1P-10, 2P-4,
2P-6, *3-1, 3P-5, 3P-8
1P-9
1-7
*2-4
*1-9, 1P-1, 3P-1
3P-2
3P-11
2P-13
3P-12, 3P-13*3P-28*2P-11*2P-17
1-1, 3P-13
3P-23
1-4, 1S-2, 3P-2
1P-8, 1P-10, 2P-1,
2P-6, 3P-3, 3P-14
3-12*1P-25

O
Obana, Daichi
Obata, Tomohito
Ogata, Hironori
Ogura, Hiroto
Ohfuchi, Mari
Ohkubo, Kei
Ohnishi, Riku
Ohno, Yutaka
Ohshimo, Keijiro
Okada, Hiroshi
Okada, Susumu
Okamoto, Naofumi
Okazaki, Shota
Okazaki, Toshiya
Okoshi, Norihiro
Okubo, Hitomi
Omachi, Haruka
Onga, Masaru
Onoe, Jun
Osawa, Eiji
Osawa, Toshio
Otsuka, Keigo
Otsuki, Nao

1P-5
3P-28
1P-18, 1P-25, 3P-20
1P-10, *2P-6
2P-6
1-8
2P-28, 3P-26
1P-19, 2P-2, 2P-3,
2P-20, 3P-19
1P-11
1-8
1-10, 1P-28, *2-2,
3-1, 3-3, 3P-5
1-3
2P-7
2-5, 2-8
2-3
1P-15, 2P-17
2P-2, *2S-2
1P-6
1-9, 1P-1, *1S-3, 3P-1
*2-6, 3P-28
3P-2
1P-12, 2P-14, 3-6, 3-7*1P-17P
Pandey, Manish
Park, Se hwan
Pasquali, Matteo
Peraca, Nicolas marquez
Pratama, Fenda rizky
Pu, Jiang

1-3
3P-10
*2I-1, 2I-2
2I-1
1P-26
2P-6, 3P-8

S
Saida, Takahiro
Saika, Bruno kenichi
Saito, Nagahiro
Saito, Riichiro
Saito, Susumu
Saito, Yahachi
Saito, Yu
Sakakita, Hajime
Sakurai, Shunsuke
Sasagawa, Takao
Sasaki, Shuichi
Sasaki, Takeo
Sasamori, TakahiroSato, Shintaro
Sato, Shu
Sato, Toshihiro
Sato, Yuta
Sawada, Hidetaka
Schwartz, Ido
Sekido, Masaru
Senga, Ryosuke- 132 -

2P-13, 3P-11
1P-9
2P-26
1P-26, 2-1, 3-12,
3P-22, 3P-25
2P-5, 3P-7
*1-5
*2I-4
1P-13
1P-13
2P-7
2-6
2-3
1-8
*1S-1
3P-4
1S-2
1P-12
2-3
1I-2
1P-17
*2-3

Seo, Seungju
Sharma, Kamal
Sharma, Kamal prasad
Shawky, Ahmed
Shigeeda, Yuho
Shikata, Ryo
Shimamoto, Kazuhiro
Shimazaki, Yuya
Shimizu, Hiroshi
Shimizu, Taiyo
Shimogami, Kazuma
Shinohara, Hisanori
Shinokita, Keisuke
Shinomori, Naoki
Shirafuji, Toshinori
Shiraki, TomohiroShu, Hiroaki
Sideri, Ioanna
Sinha, Sapna
Skido, Masaru
Son, Yeon a
Staykov, Aleksandar
Suenaga, Kazu
Sugime, Hisashi
Sukanta, Datta
Suzuki, Hiroo
Suzuki, Satoru
Suzuki, Shunta
T
Tagmatarchis, Nikos
Taguchi, Yuta
Taira, Hisao
Takai, Kazuyuki
Takeda, Yukiharu
Takei, Kuniharu
Takenobu, Taishi
Takeyama, Kei
Takizawa, Rio
Tanaka, Kaito
Tanaka, Koichiro
Tanaka, Ryoga
Tanaka, Toshihiko
Tanaka, YuichiroTang, Daiming
Taniguchi, Satoki
Taniguchi, Takahashi
Taniguchi, Takashi
Taylor, Lauren w.
Thanh cuong, Nguyen
Tian, Hongyu
Tian, Yuan
Trafford, Mitchell
Tsuji, Takashi
Tsuji, Takuma
Tsukiiwa, Mirano*3-5
2P-13, 3P-11
3-2
3-5
1-1
*1-1
2-5
*1I-2
*3P-8
*3P-18*1P-20, 3P-12
3P-5
2P-9
2-5
2P-24, 3P-24*3P-16
2-4
2-8
2-3
2P-21
3P-10
2-4
1P-12, 2-3
1-4, *1S-2, 3P-2
2I-5
1-1, 1P-20, 3P-12, 3P-13*2P-20*1P-10
2-8
*3P-7
3-8
1P-21, 1P-22, 2P-23,
2P-27, 3P-23, 3P-27
1P-9
1P-23, 3-11
2P-6, 3P-8
*2P-7
*1P-7
2P-12, *2P-28, 3P-26
2P-17
*3P-9
3P-28
3P-12
1P-12
*3P-142I-3
1I-2, 1P-6, 1P-8, 2P-7
2I-1, 2I-2
2-2
3-12
*3P-25
2I-2*1P-13*3P-27
1P-7, 3-9

Tuan hung, Nguyen
U
Uchida, Kento
Uchiyama, Haruki
Uchiyama, Masanobu
Ueji, Kan
Uejima, Mitsugu
Ueno, Hiroshi
Ukhtary, M. shoufie
Umemura, Kazuo
Utsugi, Koichi
W
Wadati, Hiroki
Wakabayashi, Katsunori
Wakabayashi, Tomonari
Wang, Sake
Wang, Xirui
Wang, Yue
Wang, Yuhuang
Warner, Jamie
Watanabe, Kenji

3P-22
2P-17
*2P-3
3P-28
*1-2, 1P-14, 1P-15,
2P-10, 2P-16
2-4
1-8, 1P-11
1P-26, 2-1, 3P-25
3-8*2P-21

Watanabe, Shinta
Wehmeyer, Geoff
Wu, Xiaojian

1P-9
1P-5, 2P-8, 3P-6
*2P-12, 2P-28, 3P-26
*3-12
2I-3
1P-9
3-7
*2S-1
1I-2, 1P-6, 1P-8,
2I-3, 2P-7
1-9, 1P-1
2I-1, 2I-2
3-7

X
Xiang, Rong
Xue, Mengsong

1-6, 1P-12, 3-5, 3-7*3P-24Y
Yabuta, Shohei
Yagi, Takashi
Yagi, Tomoko
Yajima, Wataru
Yamada, Junya
Yamada, Michio
Yamada, Takeo
Yamamoto, Daiki
Yamanoi, Ryoko
Yamashita, Daiki
Yamashita, Yoshifumi
Yana, Takumi
Yanagi, Kazuhiro

Yasoshima, Kazuki
Yasuda, Kenji
Yoda, Takaki
Yomogida, Yohei

Yonemori, Itsuki
Yoon, Jungjin
Yoshida, Satoshi- 133 -

*2P-22
1-2, 1P-15, 2P-10
*3P-3
1-1
2-7
1P-2, 2P-11
3P-18*2P-13, 3-2
2-6
*3-6
1-1
2P-26
1-2, 1P-14, 1P-15,
1P-27, 2I-2, 2P-6,
2P-10, 2P-16, 2P-17,
2P-18, 3P-8, 3P-9
*3-11
*2I-3
*3P-201-2, 1P-14, 1P-15,
1P-27, 2I-2, 2P-10,
2P-16, 2P-17, 2P-18,
3P-9
*3P-6
3-4
1P-9

Yoshida, Takumi
Yoshii, Mao
Yoshimura, Masamichi
Yoshizawa, Hayato
Yuan, Hongtao
Yuan, Shuaishuai
Yuan, Wenyu
Yulistia, Weni

*1P-21
1P-6
2P-19
*3P-1
1P-6
2P-5
*2P-10*3P-17

Z
Zhang, Minfang
Zhang, Qiang
Zhang, Shaochun
Zhang, Yan
Zhang, Yijin
Zhang, Zihao
Zheng, Liu
Zheng, Yongjia
Zhou, Ling
Zolotoukhina, Tatiana

2-8
1P-12, 2I-5
*2P-24, 3P-24
*2P-9
2P-7
*3P-2
1P-20
1P-12
1P-6
1P-24

- 134 -

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- 135 -

∈⇭∑⇧⇍∙⇞ ⊡⇟∄∞⇮↙⇭⇜⇊∙↚ቇҥદ˺⊡ ឬ᪦ඬ∁∈⇞⇰⇊⇜∞

ᧈⅾↃग़᫑ⅳ↎↏ⅳ↕ⅹ↹↭ↈ  ឬ᪦ඬ∁∈⇞⇰⇊⇜∞↖ૼ↎↙∈⇭∑ⅻᛓဃↆ↭ↆ↎⅛ɼ↙ཎᧈᩓൢ⇎⇳∑⇔∞ⅺ↸ឬ᪦ඬਰѣ↧↝‫٭‬੭јྙⅻ ˌɥ℉‒໯ᬛ↙⇎⇳∑⇔∞∓⇟ⅻ‫ↄݱ‬ⅾ⅚‫↎ↆܭܤ‬ਰࠢⅻࢽ↸↻↺⅛
ᡫࠝ↖↞⅚෩˳↝ᆔ᫏↚↷→↕ਰࠢⅻ‫ↆܭܤ‬ᩊⅳ⅛
℉‒வˑ⇁‫٭‬ⅷ↕↱ɟ‫↝ܭ‬ਰࠢ⇁̬↓ೞᏡⅻ↓ⅳ↕ⅳ↺⅛
⇞∋∞∑≋≌↚↷↺ႆਰСࣂⅻӧᏡ
℉‒˴⇞∋∞∑↖ↂ↝ϼྸⅻ‫ܦ‬ʕↈ↺↗ⅳⅵऴ‫إ‬ⅻᛯ૨↚ਫ਼᠍↖ⅼ↺⅛
 ឬ᪦ඬ∁∈⇞⇰⇊⇜∞‴⁄″⁀⁅⁁⁀‒⁅⁁⁀※‸※‷⁄‒⁅‸⁊․‧•„‧‧•

 ឬ᪦ඬ∁∈⇞⇰⇊⇜∞‴⁄″⁀⁅⁁⁀‒⁅⁁⁀※‸※‷⁄‒⁅‸⁊‣‧•››

ɼ↙⇈⇽∐⇗∞⇝∍∙
Ў૝⇑∞∂∙⇰⇴⇧∋∞⇼ ஊೞ᫊૰ ໯ೞ᫊૰ ⇡∏∅⇩⇕ ⇡∇∙⇮ ज़ή˳ ᚡ᥵஬૰ᄬࣱብ ብ஛ϫ᣿ ᣠ҄ᤧ ᣿‫ޓ‬ᣠ҄ཋ ⇝∐⇑ ⇈∑∅⇰ ⇑∞∂∙⇼∏⇩⇕∃∐∄∞ ∏⇬⇩⇕⇟ ᙌኡ ⇻⇇∙⇭∞⇝∍∙ᄂᄶд ᩓ൷ ⇻⇉∏∞ ήᚑ‫ ۥ‬ᚑ‫ٳ˳ ∙⇧⇕∕ ۥ‬ᚮૺᕤ ഫᄶⅼብ ⇝∉∙⇽∞Ҟ‫ ˳ݰ‬ᩓ‫ؕ܇‬Ⴔ ෩୒ ᝮ᣿‫ ޓ‬᣿‫ܰ ޓ‬ჽ ⇥⇊∊ ႆᣞᓏ᫏ ↌↝˂ʐ҄⇎∄∑⇞∍∙ᙌд ᠾᕤ ⇮⇰∞ ∏⇬⇩⇕⇟ မ᩿෇ࣱд ⇕∐∞∆ ʐ෩ ↌↝˂᪥ᮏᅜෆ㈍኎⥲௦⌮ᗑᮾிᮏ♫䠖䛈  ᮾி㒔Ụᮾ༊டᡞ  䝍䝙䝡䝹ᢏ⾡≀ὶ䝉䞁䝍䞊䠖䛈  ༓ⴥ┴ᕷᕝᕷᗈᑿ ኱㜰ᨭᗑ䠖䛈኱㜰ᗓ኱㜰ᕷᮾᾷᕝ༊すῐ㊰ ᪂኱㜰䝡䝹⚟ᒸႠᴗᡤ䠖䛈  ⚟ᒸ┴⚟ᒸᕷ༤ከ༊༤ከ㥐༡஦ົᶵ䝡䝹ᮐᖠฟᙇᡤ䠖
䛈 ໭ᾏ㐨ᮐᖠᕷ໭༊᪂⍆ఝ᮲    

                              ஸশဗઝ฾॒๦
㕲಑ଭӨԔՂԑԱԋՇӨ؄‫׮י‬؉՛‫؞ؖנ׾‬NIRvana® HS؄‫׮י‬؉՛‫׾‬ӼӿӺӨԶՄՇӨӲӨԶՉՀՀӨԀӾӺՌӿӻӼӨՄԺՌԵՀՇӨӴӻӼӺӺӨԶՄՇӨӲӨӼӺӺՌӼӺӺӨՄԺՌԵՀՇӨӴ໣ఀ֩ၥ‫־‬ഞ֖‫ؗ‬՛‫׾‬ԔՂՈԵԷՆԱՈԵӨԦԸԺՀԵӨԡԵԱԴӨӲԔԦԡӴӨՁՃԴԵဩఐ
ؓ‫׶ؠ‬ԡԞԔ

࿃ၥ‫־‬ഞ֖‫ׯי؃‬ԤԢԌӽӸӺไ໗

Quantum Eﬃciency (%)‫ח‬،‫צ؟‬՛‫ب؜׬‬፯Ք؊‫פ׸؀׽מ‬ଅ൩ԟԙ‫ؖי‬՛‫ץب׭‬ਸֲ‫ؠ׽פ؏׮‬Քࡴഓஶ౒ຍ‫ؖי‬՛‫ץب׭‬ਸֲ‫ؠ׽פ؏׮‬Ք໤ጉဃཕԟԙ‫ؖי‬՛‫ץب׭‬ਸֲ‫ؠ׽פ؏׮‬Ք࿵໲৑໐ᅑೕ୯‫ؖי‬՛‫ץب׭‬Քඳᆀཉኜ‫ؖי‬՛‫ץب׭‬ՔԔՂӷԥԺՊՃ‫ؖי‬՛‫ץب׭‬Ӡ֩֨

量子効率グラフ

100
90
80
70
60
50
40
30
20
10
0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

Wavelength (μm)

౗ዻ

素子サイズ
波長範囲
冷却温度

ダークチャージ

読み出しノイズダイナミックレンジ
フレームレート
インターフェース

640 x 512 x InGaAs

FRAME

0.9 〜 1.7 μm

FRAME

1

20μm x 20μm

-55℃(-50℃空冷 )700 e-/p/sec<60 e-rms
250 fps
USB3.0

-80℃

-190℃

300 e-/p/sec<8 e-/p/sec<120 e-rms

16 Bit (>15Bit@1 素子 )110 fps

Gig E

15 e-rms

2.77 fps@250KHz

2EXPOSEEXPOSEFRAME

3EXPOSEREADOUT

センサー

ԝԔԡՊԱՂԱԄԀӾӺԙԝԝԔԡՊԱՂԱԄԀӾӺREADOUTԝԔԡՊԱՂԱӨԒԢREADOUT‫ؠ׼ؗ‬

Integrate While Read (IWR) mode
for maximum duty cyclewww.pi-j.co.jp‫ بי׵ء׻‬Ք ‫ؘ׭‬؆‫ب‬খಠवೂӨӨ،‫׹بؖؠ׹׮بיب׽׮ب؟‬ÆӻԁӺӷӺӺӻӽӠဪੜဒሟဥતဪཕ༂ӨӽӷӾӷӽӨཕ༂‫י‬՛‫׽׮‬ӨӨӨӨӨԣԏԙӨӺӽӷԀԁӺԃӷӺԀӽӻӠԐԋԧӨӺӽӷԀԁӺԃӷӺԀӽӼ