RoHS

YJW018C60CFCOMPLIANT

N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)● 100% EAS Tested● 100% ▽VDS Tested

600V
102A
＜18.5mΩGeneral Description● Excellent package for heat dissipation● High density cell design for low RDS(ON)● Epoxy Meets UL 94 V-0 Flammability Rating● Halogen Free

Applications● EV Charger● AC-DC Power Management● Sever/Telecom/PC Power■ Limiting Values
Parameter

Conditions

SymbolMinMax

Drain-source Voltage

VDS-600

Gate-source Voltage

VGS-2020-

8.2-

5.2TC=25℃, VGS= 10V,Chip limitation-102

TC =100℃, VGS= 10V-64.5-408

Unit
V

TA=25℃, VGS= 10V
Continuous Drain Current (Note 1,2)

Steady-State
TA=100℃, VGS= 10V
ID

Continuous Drain Current (Note 1,3)

Steady-State

Pulsed Drain Current

TC=25℃, tp≤10µs

IDM

Maximum Body-Diode Continuous Current

TC=25℃

IS

Maximum Body-Diode Pulsed Current

TC=25℃, tp≤10µs

ISM-408

Avalanche energy (non-repetitive )TJ=25℃, VG=10V, RG=25Ω, L=30mH, IAS=12A

EAS-2160-3.1

Total Power Dissipation (Note 1,2)

Steady-State-

1.2

TC=25℃-480

TC =100℃

-192

102

TA=25℃
TA=100℃
Total Power Dissipation (Note 1,3)

Steady-State

A

PDmJW

MOSFET dv/dt ruggedness

VDS=0…300V, Rg=0Ω

dv/dt

-50

Reverse diode dv/dt

VDS=0…300V, ID<=100A, di/dt=200A/us

dv/dt

-28

Maximum diode commutation speed

VDS=0…300V, ID<=100A, Rg=0Ω

dif/dt

-6940

A/us

TJ ,TSTG-55

150℃V/ns

Junction and Storage Temperature Range■Thermal resistanceParameter

SymbolTypMax

Thermal Resistance Junction-to-Ambient (Note 2)

Steady-StateRθJA-40

Thermal Resistance Junction-to-Case

Steady-StateRθJC-0.26

Units℃/W■ Ordering Information (Example)
PREFERED P/N

PACKING
CODE

Marking

MINIMUM
PACKAGE(pcs)

INNER BOXQUANTITY(pcs)

OUTER CARTONQUANTITY(pcs)

DELIVERYMODE

YJW018C60CF

B1

YJW018C60CF

30360

1800

Tube

1/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF■ Electrical Characteristics
Parameter

SymbolConditions

Min

TypMaxUnits

VGS= 0V, ID=1mA, Tj =25℃

600--V

VGS= 0V, ID=30mA, Tj =25℃

600--V

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

Zero Gate Voltage Drain Current

IDSS

VDS=600V, VGS=0V, Tj =25℃--10μA

Gate-Source Leakage Current

IGSS

VGS= ±20V, VDS=0V, Tj =25℃--±100nA

Gate Threshold Voltage

VGS(th)VDS= VGS, ID=1mA, Tj =25℃

3-5

V

VGS=10V, ID=58A, Tj =25℃

-

15.5

18.5

Static Drain-Source On-ResistanceRDS(ON)
VGS=10V, ID=58A, Tj =150℃-38.6446.12mΩ

Diode Forward Voltage

VSD

IS=58A, VGS=0V, Tj =25℃

-

0.99

1.3

V

Gate resistanceRG

f=1MHz, Tj =25℃

-0.9-

Ω-

11085-

-190-

-10-

-546-

-5340

-

-

278.3

-

-

69.5

-

Dynamic Parameters
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Effective output capacitance, energy
relatedCo(er)

Effective output capacitance, time
relatedCo(tr)

VDS=300V, VGS=0V, f=1MHz, Tj =25℃

VDS=0…300V, VGS=0V, f=1MHz,Tj =25℃S

pF

Switching Parameters
Total Gate Charge

Qg

Gate-Source ChargeQgs

Gate-Drain Charge

Qgd

-

132.7

-

Reverse Recovery Charge

Qrr-

1588-nC

Reverse Recovery Timetrr

-200-

ns

Peak Reverse Recovery Current

Irrm

-12-

A

Turn-on Delay TimetD(on)

-

140

-

Turn-on Rise Timetr-

32-

Turn-off Delay TimetD(off)-137-

Turn-off fall Timetf

-

6.5

-

VGS=10V, VDS=300V, ID=58A, Tj =25℃

IF=58A, di/dt=100A/us, VGS=0V,
VR=300V, Tj =25℃

VGS=10V, VDS=300V, ID=58A,RGEN=3Ω,Tj =25℃

nC

ns

Note：
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.
2. The value of RθJA is measured in the still air environment with TA =25℃.The maximum allowed junction temperature of 150℃.
3. Thermal resistance from junction to soldering point (on the exposed drain pad)

2/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF■Typical Electrical and Thermal Characteristics Diagrams
200

VDS=20V

VGS= 10V
9V

Tj=25℃

1508V300

ID-Drain Current (A)ID-Drain Current (A)

400

200

7V
100100

Tj=25℃

Tj=150℃
50

6V000510152204VDS-Drain to Source Voltage (V)Figure 1. Output Characteristics; typical values
1000000

VGS-Gate to Source Voltage (V)C-Capacitance (pF)

10Ciss

10000

1000

Coss
100

Crss

10

1108

VDS=300V
ID=58A
Tj=25℃

64200100

200

300

400

500

6000100

VDS-Drain to Source Voltage (V)300

Figure 4. Gate Charge; typical values

3RDS(on)-Drain to Source Resistance
Normalized

200

150

10050

ID=58A
Tj=25℃

Vgs=10VID=58A

2.52

1.5

10.5006200

Qg-Total Gate Charge (nC)

Figure 3. Capacitance Characteristics; typical values

RDS(on)-Drain to Source resistance (mΩ)

8Figure 2. Transfer Characteristics; typical values

VGS=0V
f=1MHZ
Tj= 25℃

1000006Vgs-Gate to Source Voltage (V)789-75

10-252575

125175

Tj-Junction Temperature (℃)

VGS-Gate to Source Voltage (V)Figure 5. On-Resistance vs Gate to Source Voltage; typical values

Figure 6. Normalized On-Resistance

3/9S-E557
Rev.1.0,28-Aug-24Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

10030Is-Reverse Drain Current (A)RDS(on) -Drain to Source resistance (mΩ)

YJW018C60CF

20

VGS=10V
10

VGS= 0V10

Tj=150℃

Tj=25℃

Tj=25℃
100

20

40

60

80

0.3

1000.4

Figure 7. RDS(on) VS Drain Current; typical values

0.6

0.7

0.8

0.9

1

1.1

1.2

Figure 8. Forward characteristics of reverse diode; typical values

1.6

1.15

ID=250uA

ID=30mA
1.1

VGS(th)-Threshold Voltage
Normalized

BVDSS-MAX Drain to Source Voltage
Normalized

0.5Vsd- Source to Drain Voltage (V)ID-Drain Current (A)

1.05

10.95

0.9

1.2

0.8

0.4

0.85-75-2525751250175-75-252575

125

Tj-Junction Temperature (℃)

Tj-Junction Temperature (℃)

Figure 9. Normalized breakdown voltage

Figure 10. Normalized Threshold voltage

175

600

150

VGS= 10V

Ptot-Power Dissipation (W)ID-Drain Current (A)

500

10050

400

300

200

10000-50050100-50150

050100150

Tc-Case Temperature (℃)

Tc-Case Temperature (℃)

Figure 11. Current dissipation

Figure 12. Power dissipation

4/9S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF
1000

0.1

ID-Drain-Source Current (A)Zth(J-C)-Thermal Resistance (℃/W)

1

D=0.5
D=0.3

D=0.1

0.01

D=0.05
D=0.02

D=0.01100

Operation in this area islimited by RDS(ON)

10us
100us
10300us

1ms

110ms
0.1

DC

TJ(max)=150℃
TC=25℃

Single Pulse

0.001
0.000001 0.00001 0.0001

0.001

0.01

0.1

10.01

10Single Pulse

0.1

Square Wave Pulse Durtion(S)110100

1000

10000

VDS-Drain to Source Voltage (V)Figure 13. Maximum Transient Thermal Impedance

Figure 14. Safe Operation Area

5/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF■ Test Circuits & Waveforms
EAS=1/2*L*IAS2
Tp

VGS
DSL

Tp

GIAS

A
DID

VDD
DUT

BVDSS

Vds

25Ω

GS

Tp

VDS

Figure A. Unclamped Inductive Switching (UIS) Test Circuit & Waveform

D

R1

VGS

VGS (V)

Qg

R2

G10V

SC1
VDDQgs

DR3

DUT

GIG

Qgd

VGS(pl)SCharge (C)Figure B. Gate Charge Test Circuit & Waveform

VDS
90%L

90%90%

D

DUT

C1C2

VDD

Vds

Rg
GVR

S

R shunt

Vgs

10%10%10%

VGStD(on)trtftD(off)

Id=VR/R shuntt(on)t(off)

Figure C. Resistive Switching Test Circuit & Waveform

6/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF
DRg

ISD

GS

DC1C2

VDD
trr

DUT

GS

R shunt

VR

25%IRRM
Qrr

LIRRM

Figure D. Diode Recovery Test Circuit & Waveform

7/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF■ TO-247AB Package information
TO-247AB

TO-247ABDimMinMax

A

4.80

5.20

A1

2.21

2.61

A2

1.85

2.15

b1.0

1.4

b2

1.91

2.21

c

0.5

0.7

D

20.70

21.30

D1

16.25

16.85

E

15.50

16.10

E1

13.0

13.6

E2

4.80

5.20

E3

2.30

2.70

L

19.62

20.22

L1-4.30

ΦP

3.40

3.80

ΦP1-7.30

S
H1b3

6.15TYP
5.44TYP
2.80

3.20

8/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJW018C60CF
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves theright to make changes without notice for the specification of the products displayed herein to improve reliability, function or design orotherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used withequipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safetydevices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use ofsale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://
www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

9/9
S-E557
Rev.1.0,28-Aug-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com