RoHSYJB17C80HJCOMPLIANT

N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)● 100% EAS Tested● 100% ▽VDS Tested

800V
17A
＜290mΩ

General Description●Super Junction High Voltage MOSFET technology● Low Power Loss by High Speed Switching andLow On-Resistance● Moisture Sensitivity Level 1● Epoxy Meets UL 94 V-0 Flammability Rating● Halogen FreeApplications● Power switching application● Flyback power supply stages● Adapter● Lighting■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
ParameterSymbol

Limit

Unit

Drain-source Voltage

VDS

800

V

Gate-source Voltage

VGS±30V

2TA=25℃
TA =100℃

1.3

Drain Current

ID

A

TC=25℃

17

Tc=100℃

10Pulsed Drain Current A

IDM

50A

Avalanche energy B

EAS

225

mJ

2.7

TA =25℃

1

TA =100℃
Total Power Dissipation C

PD

W

TC=25℃

200

Tc=100℃

80

Junction and Storage Temperature Range

TJ ,TSTG℃-55～+150■Thermal resistanceParameter
Thermal Resistance Junction-to-AmbientD

Symbol

TypMax

Steady-State

RθJA

3545

Steady-State

RθJC

0.5

0.62

Units℃/W

Thermal Resistance Junction-to-Case■ Ordering Information (Example)
PREFERED P/N

PACKING
CODEMarking

MINIMUM
PACKAGE(pcs)

INNER BOXQUANTITY(pcs)

OUTER CARTONQUANTITY(pcs)

DELIVERY MODEYJB17C80HJF2YJB17C80HJ

800/8000

13“ reel

1/7
S-E332
Rev.1.0,05-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJB17C80HJ■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter

SymbolConditions

Min

TypMax

Units

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=250μA

800--V

VDS=800V, VGS=0V--1

Zero Gate Voltage Drain Current

IDSS
VDS=800V, VGS=0V, Tj=150℃--100

Static ParameterμA

Gate-Body Leakage Current

IGSS

VGS= ±30V, VDS=0V--±100nA

Gate Threshold Voltage

VGS(th)VDS= VGS, ID=250μA

234V

Static Drain-Source On-ResistanceRDS(on)VGS=10V, ID=11A

-

220

290mΩ

Diode Forward Voltage

VSD

IS=17A, VGS=0V

-

0.85

1.2V

Gate resistanceRG

f=1MHz-2-

ΩMaximum Body-Diode Continuous Current

IS--17A

Input CapacitanceCiss-1800-

Output CapacitanceCoss-1500-Reverse Transfer Capacitance

Crss-

64-

Total Gate Charge

Qg

-56-

Gate-Source Charge

Qgs-10-Gate-Drain Charge

Qgd-22-

Reverse Recovery Charge

Qrr-9.5-nCns

Dynamic Parameters

VDS=25V, VGS=0V, f=1MHz

pF

Switching Parameters

VGS=10V, VDS=640V, ID=17A

nC

IF=17A, di/dt=100A/us
Reverse Recovery Timetrr

-

565

-

Turn-on Delay TimetD(on)-

32-

Turn-on Rise Time

tr-

56

-

Turn-off Delay TimetD(off)

-160

-

Turn-off fall Timetf-

49-

VGS=10V, VDD=400V, ID=17A
RGEN=25ΩnsA. Repetitive rating; pulse width limited by max. junction temperature.
B. TJ=25℃, VDD=50V, VG=10V, L=50mH, IAS=3A.
C. Pd is based on max. junction temperature, using junction-case thermal resistance.
D. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in the still air environment with TA =25℃.
The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.

2/7S-E332
Rev.1.0,05-May-23Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJB17C80HJ■Typical Electrical and Thermal Characteristics Diagrams
80

VDS=20V

ID-Drain Current (A)

6025℃
40150℃
2000246810VGS-Gate to Source Voltage (V)Figure1. Output Characteristics

Figure2. Transfer Characteristics

10000

10Coss1000

C-Capacitance (pF)

VGS-Gate to Source Voltage (V)Ciss

100Crss
10Tj= 25℃
142204060

80

100010203040

VDS-Drain to Source Voltage (V)Qg-Total Gate Charge (nC)

Figure3. Capacitance Characteristics

Figure4. Gate Charge

3ID=17A
Tj=25℃

RDS(on)-Drain to Source Resistance
NormalizedRDS(on)-Drain to Source resistance (mΩ)

600800VDS=640V
ID=17A
8 Tj=25℃

600

400

200

5060

125

175

Vgs= 10V
ID= 17A

2.5

2

1.5

10.5

0045

67

89-75

10-252575

Tj-Junction Temperature (℃)

VGS-Gate to Source Voltage (V)Figure5. On-Resistance vs Gate to Source Voltage

Figure6. Normalized On-Resistance

3/7
S-E332
Rev.1.0,05-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

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YJB17C80HJ100

Is-Reverse Drain Current (A)RDS(on) -Drain to Source resistance (mΩ)

400

300

VGS=10V

200

100

Tj=25℃
510152025030

0.2

0.4

0.6

0.8

11.2

Vsd- Source to Drain Voltage (V)ID-Drain Current (A)Figure7. RDS(on) VS Drain Current

Figure8. Forward characteristics of reverse diode

1.4

1.1

ID=250uA

ID=250uA
1.2

VGS(th)-Threshold Voltage
Normalized

BVDSS-MAX Drain to Source Voltage
Normalized

25℃

100150℃

101.05

10.95

0.9-75-252575

125

10.8

0.6

0.4

0.2

175-75-252575125175

Tj-Junction Temperature (℃)

Tj-Junction Temperature (℃)

Figure9. Normalized breakdown voltage

Figure10. Normalized Threshold voltage

250

20200

Ptot-Power Dissipation (W)ID-Drain Current (A)15105150

100

5000-50050100-50150

050100150

Tc-Case Temperature (℃)

Tc-Case Temperature (℃)

Figure11. Current dissipation

Figure12. Power dissipation

4/7
S-E332
Rev.1.0,05-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

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YJB17C80HJ
1000.1

D=0.3
D=0.1
D=0.05

0.01D=0.02

D=0.01

0.001
Single Pulse

10us

Operation in this area islimited by RDS(ON)

D=0.5

ID-Drain-Source Current (A)Zth(J-C)-Thermal Resistance (℃/W)

1100us

10300us1ms
110ms
TJ(max)=150℃

DC

TC=25℃

0.00010.000001

0.00001

0.0001

0.001

0.01

0.1

Single Pulse

0.1

10.1

Square Wave Pulse Durtion(S)1101001000

VDS-Drain to Source Voltage (V)Figure13. Maximum Transient Thermal Impedance

Figure14. Safe Operation Area

5/7
S-E332
Rev.1.0,05-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJB17C80HJ■TO-263-HY Package information

θTOP VIEW

SIDE VIEWθNOTE:
1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH ANDGATE BURRS.
2.TOLERANCE 0.1mm UNLESS OTHERWISE SPECIFIED.
3.THE PAD LAYOUT IS FOR REFERENCE PURPOSES
ONLY.

UNIT：mm

BOTTOM VIEW

SUGGESTED SOLDER PAD LAYOUT

6/7
S-E332
Rev.1.0,05-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

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YJB17C80HJDisclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves theright to make changes without notice for the specification of the products displayed herein to improve reliability, function or design orotherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used withequipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use ofsale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

7/7
S-E332
Rev.1.0,05-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com