RoHSYJF12N65HXCOMPLIANT

N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)● 100% EAS Tested● 100% ▽VDS Tested

650V
12A
＜0.85Ω

General Description● Low Power Loss by High Speed Switching andLow On-Resistance● Epoxy Meets UL 94 V-0 Flammability Rating● Halogen FreeApplications● Power switching application● Adapter● PFC Power Supply Stages■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter

SymbolLimitUnit

Drain-source Voltage

VDS650VGate-source Voltage

VGS±30V0.8

TA=25℃

0.5

TA=100℃
Drain Current

ID

A

TC=25℃12

TC =100℃

7.5

Pulsed Drain Current A

IDM

25A

Avalanche energy B

EAS

693.6

mJ

1.92

TA=25℃

0.76

TA=100℃
Total Power Dissipation CPD

W

TC=25℃52

TC =100℃

20

Junction and Storage Temperature Range

TJ ,TSTG℃-55～+150■Thermal resistanceParameter

Symbol

TypMaxThermal Resistance Junction-to-Ambient D

Steady-State

RθJA

55

65

Thermal Resistance Junction-to-Case

Steady-State

RθJC

22.4

Units℃/W■ Ordering Information (Example)
PREFERED P/N

PACKING
CODEMarkingMINIMUM
PACKAGE(pcs)

INNER BOXQUANTITY(pcs)

OUTER CARTONQUANTITY(pcs)

DELIVERYMODE

YJF12N65HX

B1

YJF12N65HX50/5000

Tube

1/8
S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HX■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter

SymbolConditions

Min

TypMax

Units

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=250μA

650

--V

VDS=650V, VGS=0V--1

Zero Gate Voltage Drain Current

IDSS

Static Parameter

μA
VDS=650V, VGS=0V, Tj=150℃--100

Gate-Body Leakage Current

IGSS

VGS= ±30V, VDS=0V--±100nA

Gate Threshold Voltage

VGS(th)VDS= VGS, ID=250μA

2.2

3.03.8V

Static Drain-Source On-ResistanceRDS(ON)

VGS=10V, ID=6A

-

0.68

0.85

ΩDiode Forward Voltage

VSD

IS=6A, VGS=0V--

1.2

V

Gate resistanceRG

f=1MHz-3.3-

ΩMaximum Body-Diode Continuous Current

IS--12A

Input Capacitance

Ciss-

2000

-

Output CapacitanceCoss-40-Reverse Transfer CapacitanceCrss-

2.2-Total Gate Charge

Qg-38.5-Gate-Source Charge

Qgs-

10.5-

Gate-Drain Charge

Qgd-

13.4

-

Reverse Recovery Charge

Qrr-5.34-uCns

Dynamic Parameters

VDS=325V, VGS=0V, f=1MHzpF

Switching Parameters

VGS=10V, VDS=325V, ID=12A

nC

IF=12A, di/dt=100A/us
Reverse Recovery Time

trr

-407

-

Turn-on Delay TimetD(on)-27-

Turn-on Rise Time

tr-

16-

-

26-

-

10-

Turn-off Delay TimetD(off)Turn-off fall Time

tf

VGS=10V, VDD=325V, ID=12A
RGEN=2.2Ω

nsA. Repetitive rating; pulse width limited by max. junction temperature.
B. TJ=25℃, VG=10V, L=30mH, IAS=6.8A.
C. Pd is based on max. junction temperature, using junction-case and junction-ambient thermal resistance.
D. The value of RθJA is measured with the device mounted on the 40mm*40mm*1.1mm FR-4 PCB board with 1 in2 pad of 2oz. Copper, in the still
air environment with TA =25℃.The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's
specific board design.

2/8S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HX■ Typical Electrical and Thermal Characteristics Diagrams
2525Tj=25℃

VGS= 10V
9V8V
7V
6V25℃
20

ID-Drain Current (A)ID-Drain Current (A)20

VDS= 20V

15105V15150℃
10554.5V

4V
000510152203Figure 1. Output Characteristics

10000

10Tj=25℃
VGS-Gate to Source Voltage (V)Ciss

C-Capacitance (pF)

567Figure 2. Transfer Characteristics

1000

100

Coss10Crss1

VDS=325V
ID=12A
Tj=25℃

864200100

200

300

400

500

6000102030

VDS-Drain to Source Voltage (V)Qg-Total Gate Charge (nC)

Figure 3. Capacitance Characteristics

Figure 4. Gate Charge

3RDS(on)-Drain to Source Resistance
Normalized

2RDS(on)-Drain to Source resistance (Ω)

4Vgs-Gate to Source Voltage (V)VDS-Drain to Source Voltage (V)1.5

1ID=12A
Tj=25℃

Vgs=10V
ID=12A

2.5

21.5

10.5

00.5
440

68-75

10-252575

125

175

Tj-Junction Temperature (℃)

VGS-Gate to Source Voltage (V)Figure 5. On-Resistance vs Gate to Source Voltage

Figure 6. Normalized On-Resistance

3/8
S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HX
100Is-Reverse Drain Current (A)RDS(on) -Drain to Source resistance (Ω)

1.1

0.9

0.7

VGS=10V

1025℃

150℃
1

Tj=25℃
0.1

0.5

04

8

12

16

0.3

20

0.4

0.6

0.7

0.8

0.9

1

1.1

1.2

Vsd- Source to Drain Voltage (V)Figure 7. RDS(on) VS Drain Current

Figure 8. Forward characteristics of reverse diode

1.4

1.2

ID=250uA

ID=250uA

BVDSS-MAX Drain to Source Voltage
Normalized

0.5ID-Drain Current (A)VGS(th)-Threshold Voltage
Normalized

1.15
1.1

1.05

10.95
0.90.85-75-252575

125

10.8

0.60.4

175-75-252575125

Tj-Junction Temperature (℃)

Tj-Junction Temperature (℃)

Figure 9. Normalized breakdown voltage

Figure 10. Normalized Threshold voltage

17560

Ptot-Power Dissipation (W)15ID-Drain Current (A)1.2

105402000-50050100-50150

050100150

Tc-Case Temperature (℃)

Tc-Case Temperature (℃)

Figure 11. Current dissipationFigure 12. Power dissipation

4/8S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HX
100

1ID-Drain-Source Current (A)Zth(J-C)-Thermal Resistance (℃/W)

10

D=0.5
D=0.3
D=0.1

0.1

D=0.05
D=0.02
D=0.01

0.01
Single Pulse

Operation in this area islimited by RDS(ON)1010us
100us
300us
1ms

1

10ms

0.1

DC
TJ(max)=150℃

TC=25℃

0.001
0.000001

0.0001

0.01

1Single Pulse

0.01

100

1Square Wave Pulse Durtion(S)

10100

1000

10000

VDS-Drain to Source Voltage (V)Figure 13. Maximum Transient Thermal Impedance

Figure 14. Safe Operation Area

■ Test Circuits & Waveforms
EAS=1/2*L*IAS2Tp

VGS
DSL

Tp

GIAS

A
DID

VDD
DUT

25Ω

BVDSS

Vds

GS

Tp

VDS

Figure A. Unclamped Inductive Switching (UIS) Test Circuit & Waveform

5/8
S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HX
D

R1

VGS

VGS (V)

Qg

R2

G10V

S
C1
VDD

DR3

VGS(pl)

DUT

GIG

Qgd

Qgs

SCharge (C)Figure B. Gate Charge Test Circuit & Waveform

VDS
90%L

90%90%

D

DUT

C1C2

VDD

Vds

Rg
GS

R shunt

Vgs

VR

10%10%10%

VGStD(on)tftD(off)tr

Id=VR/R shuntt(off)t(on)Figure C. Resistive Switching Test Circuit & Waveform

DRg

ISD

GS

DC1

C2

VDD
trr

DUT

GS

R shunt

VR

25%IRRM
Qrr

L

IRRM

Figure D. Diode Recovery Test Circuit & Waveform

6/8
S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HX■ ITO-220AB-C Package information

ΦΦ

NOTE:1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS.
2.TOLERANCE 0.1mm UNLESS OTHERWISE SPECIFIED.

TOP VIEW

SIDE VIEW

7/8
S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJF12N65HXDisclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves theright to make changes without notice for the specification of the products displayed herein to improve reliability, function or design orotherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used withequipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safetydevices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use ofsale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

8/8
S-E488
Rev.1.0,10-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com