Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28Features••••••••••PIN Chip

Switch & Attenuator Die
Extensive Selection of I-Region Lengths
HermeticGlass Passivated Cermachip
Oxide Passivated Planar Chips
Voltage Ratings to 3000 V
Fast Switching Speed
Low LossHigh Isolation
RoHS* Compliant

Anode

NIP ChipDescription
MACOM offers a comprehensive line of low
capacitance, planar and mesa, silicon PIN/NIP diodechips which use ceramic glass and silicon nitride
passivation technology. The silicon PIN/NIP chipseries of devices cover a broad spectrum of performance requirements for control circuit applications.
They are available in several choices of I-region
lengths and have been optimally designed to minimize
parametric trade offs when considering low
capacitance, low series resistance, and highbreakdown voltages. Their small size and low
parasitics, make them an ideal choice forbroadband, high frequency, micro-strip hybrid
assemblies.
The attenuator line of PIN diode chips are a planaror mesa construction and because of their thicker
I-regions and predictable RS vs. I characteristics,
they are well suited for low distortion attenuatorand switch circuits. Incorporated in the chip’s
construction is MACOM’s, time proven, hard glass,Cermachip process. The hard glass passivation
completely encapsulates the entire PIN junction area
resulting in a hermetically sealed chip which has
been qualified in many military applications. These
Cermachip diodes are available in a wide range ofvoltages, up to 3,000 volts, which are capable ofcontrolling kilowatts of RF power.

Many of MACOM ’s silicon PIN diode chips are also available
in several different package styles. Please refer to the“Packaged PIN Diode Datasheet” for case style availability
and electrical specifications located on the MACOM website.
Also for high voltage, high power devices refer toMA4PK2000.

CathodeAbsolute Maximum Ratings1
TA = +25°C (Unless otherwise specified)Parameter

Absolute Maximum

Forward Current (IF)Per P/N Rs vs. I Graph

Reverse Voltage (VR)Per Specification Table

Power Dissipation (W)

175°C – Tambient°C
Theta

Operating Temperature-55°C to +175°C

Storage Temperature-55°C to +200°C

Junction Temperature+175°C

Mounting Temperature+320°C for 10 seconds

1. Exceeding these limits may cause permanent damage to thechip.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:https://www.macom.com/support

DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

Electrical Specifications: TA = +25°CLow Capacitance PIN
Maximum Characteristics
Part Number

ReverseVoltage2
VR <10 µA

Nominal Characteristics

Capacitance Series Res.
1 MHz
500 MHzCJ @ -10 V RS @ 10 mA

Carrier
Lifetime3TL

ReverseRecoveryTime4TRR

I Region
Length

Theta

VDC

pF

Ω

ηs

ηs

µm°C/W

MA4P161-134

100

0.10

1.50

15015

1365

MA4P203-134

100

0.15

1.50

150

251375

MA4P7493-134

150

0.05

1.80

80

81960

MADP-000165-01340W

200

0.06

2.50

20020

1930

MADP-000135-01340W

2000.151.20

440441930Attenuator PIN
Maximum Characteristics
Part NumberReverseVoltage2VR <10 µA

Nominal Characteristics

Capacitance Series Res. Carrier Series Res. Series Res.
I Region
1 MHz100 MHz
Lifetime3 100 MHz
100 MHz
ThetaLength
CJ @ -100 V RS @ 10 mATL
RS @ 10 μA RS @ 1 mA

VDCpF

Ω

µs

Ω

Ωmils°C/W

MA47416-132

200

0.15

62

2000

30

430

MA47418-134

2000.153150015225

2. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (I R) is measured to be <10 μA.
3. Nominal carrier life time (TL ) specified at IF = +10 mA, IREV = -6 mA.
4. Nominal reverse recovery time specified at IF = +20 mA, IREV = -200 mA.

2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:https://www.macom.com/support

DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

Electrical Specifications: TA = +25°C (cont.)
Cermachip PIN
Maximum Characteristics
Part NumberNominal Characteristics

ReverseVoltage5VR <10 µA

Capacitance
1 MHz
CJ @ -100 V

Series Res.
100 MHzRS @ 100 mA

Carrier
Lifetime6I Region
Length

Theta

VDCpF

Ωµsµm°C/W

80.3

2030

MA4P303-134200

0.15 @ 10 V

1.5 @ 10 mA

MA4P404-132

250

0.20 @ 50 V

0.70 @ 50 mA8

0.630

20

MA4P504-132

500

0.20

0.60

15020

MA4P505-131

500

0.35

0.45

250

14

MA4P506-131

500

0.70

0.30

350

11MADP-000488-13740W

900

0.19 @ 50 V

1.6 @ 50 mA

414045

MA4P604-131

1000

0.30

1.00

390

10MA4P606-1311000

0.600.704908MA4P607-212

1000

1.300.40

12127

4MADP-011141-13160W

1100

0.40

0.70

7140

10MADP-011169

1500

0.15

1.2 @ 200 mA

3.5

175

6.5

MADP-04P709-0DIEW0

1500

3.17 @ 50 V

0.20

24200

2MA4PK3000-12527

3000

2.90

0.25 @ 500 mA960

350

1.5

5. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (I R) is measured to be <10 μA.
6. Nominal carrier life time (TL ) specified at IF = +10 mA, IREV = -6 mA.
7. Upon completion of circuit installation, the chip must be covered with a dielectric conformal coating such as SYLGARD 539 ® to prevent
voltage arcing.
8. Test Frequency = 500 MHz.
9. Test Frequency = 4 MHz.

Cermachip NIP
Maximum Characteristics
Part Number

MADN-011147-0DIEW0

Nominal Characteristics

ReverseVoltage10
VR <10 µA

Capacitance
1 MHz
CJ @ -50 VSeries Res.
100 MHzRS @ 10 mA

Carrier
Lifetime11TL

I Region
Length

Theta

VDCpF

Ω

nsµm

°C/W

400

0.1

2.5

950

4520

10. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (I R) is measured to be <10 μA.
11. Nominal carrier life time (TL ) specified at IF = +10 mA, IREV = -6 mA., 90%.
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:https://www.macom.com/support

DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

PIN Chip Outline

NIP Chip Outline

CathodeAnodeLow Capacitance PIN Chip
Part Number

Nominal Characteristics (mils.)
Anode Diameter
Chip Size
Chip Thickness± 0.5± 0.5± 0.5

MA4P161-134

3.5

13 x 13

6.0

MA4P203-134

3.1

13 x 13

6.0

MA4P7493-134

3.8

13 x 13

6.5

MADP-000165-01340W

2.3

13 x 13

10.0

MADP-000135-01340W

3.1

13 x 13

10.0

Attenuator PIN ChipPart Number

Nominal Characteristics (mils.)
Anode Diameter
Chip Size
Chip Thickness
± 0.5
± 2.0
± 1.0

MA47416-132

7.5 x 7.510

19 x 197.0

MA47418-134

7.5

13 x 13

7.0

10. Anode top contact is square.

4MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:https://www.macom.com/support

DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

PIN Chip Outline

NIP Chip Outline

CathodeAnodeCermachip PIN Chip
Part Number

Nominal Characteristics (mils.)
Anode Diameter
Chip Size
Chip Thickness
± 0.5
± 2.0
± 1.0

MA4P303-134

3.0

13 x 13

10.0

MA4P404-132

6.820 x 20

10.0

MA4P504-1326.8

20 x 20

10.0

MA4P505-131

13.0

27 x 27

11.0

MA4P506-131

15.8

27 x 27

12.0

MADP-000488-13740W

12.2

23 x 23

13.5

MA4P604-131

17.0

27 x 27

13.5

MA4P606-131

21.0

32 x 32

14.0

MA4P607-212

37.0

62 x 62

18.5

MADP-011141-13160W

17.5

32 x 32

16.0

MADP-011169

12.5

42 x 42

15.0

MADP-04P709-0DIEW0

71.6

115 x 115

21.0

MA4PK3000-1252

85.0

172 x 172

28.0

Cermachip NIP Chip
Part Number
MADN-011147-0DIE0W

Nominal Characteristics (mils.)
Cathode ( Oval )Chip Size
Chip Thickness± 0.2
± 1.0
± 0.5
7.3 x 3.5

17.5 x 13.5

7.0

5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:https://www.macom.com/support

DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

Typical Series Resistance vs. Forward Current Performance
MA4P504, MA4P505, MA4P506

MA4P203, MA4P303, MA4P404

1000

100Series Resistance ()Series Resistance ()1000

MA4P203
MA4P303
MA4P404

1010.100.1110100100

1010.1

1000

MA4P504
MA4P505
MA4P50600.1

Forward Current (mA)

MA4P604, MA4P606, MA4P607

100

1000

1000

100

Series Resistance ()Series Resistance ()10MADP-011141, MAPD-04P709

1000

MA4P604
MA4P606
MA4P6071010.1

1

Forward Current (mA)

00.1

1

101001000

Forward Current (mA)

MADP-011141
MADP-04P709

100

1010.100.11101001000

Forward Current (mA)

MA47416, MA47418, MADP-011169
10000

Series Resistance ()1000
MA47416———- MA47416, MADP-011169- - - - - MA47418
MA47418

1001010.100.1

1101001000

Forward Current (mA)
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

MA4PK3000 (3kV) Chip
Forward Current vs. DC Forward Voltage @ 100 MHz

Reverse Bias Conductance vs. Frequency
1000

Reverse Bias Conductance (µs)

Forward Current (mA)

10000

1000

1001010.30.50.70.9

1.1

1.30V
1V10 V
20 V
100 V

100101110100

Frequency (MHz)Forward Voltage (V)Series Resistance vs. Forward Current @ 100 MHz

Series Resistance ()1010.10101001000

Forward Current (mA)

7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

Die Handling and Bonding Information:
Handling:
All semiconductor chips should be handled with careto avoid damage or contamination from perspiration,salts, and skin oils. The use of plastic tipped
tweezers
orvacuumpickupisstrongly
recommended for the handling and placing ofindividual components. Bulk handling should ensurethat abrasion and mechanical shock are minimized.

Die Attach Surface:
Die can be mounted with an 80Au/Sn20, eutectic
solder preform, RoHS compliant solders orelectrically conductive silver epoxy. The metal RFand DC ground plane mounting surface must be freeof contamination and should have a surface flatnessof < ±0.002”.

Eutectic Die Attachment Using Hot Gas
Die Bonder:
A work surface temperature of +255°C isrecommended. When hot forming gas (95%N/5%H)
is applied, the work area temperature should beapproximately +290°C. The chip should not be
exposed to temperatures greater than +320°C formore than 10 seconds.

Eutectic Die Attachment Using Reflow
Oven:
For recommended reflow profile refer to Application
Note 538 “Surface Mounting Instructions”.

Electrically Conductive Epoxy Die
Attachment:
A controlled amount of electrically conductive, silver
epoxy, approximately 1 - 2 mils in thickness, should
be used to minimize ohmic and thermal resistance.
A thin epoxy fillet should be visible around theperimeter of the chip after placement to ensure fullarea coverage. Cure conductive epoxy per
manufacturer’s schedule. Typically +150°C for1 hour.

Wire and Ribbon Bonding:
The die anode bond pads have a Ti-Pt-Au
metallization scheme, with a final gold thickness of
1.0 micron. Thermo-compression or thermo-sonicwedge bonding of either gold wire or ribbon isrecommended. A bonder heat stage temperature
setting of +200°C, tool tip temperature of +150°C
and a force of 18 to 50 grams is suggested.
Ultrasonic energy may also be used but should beadjusted to the minimum amplitude required toachieve an acceptable bond. Excessive energy may
cause the anode metallization to separate from thechip. Automatic ball or wedge bonding may also beused.

For more detailed handling and assembly
instructions, see Application Note M541,“Bonding and Handling Procedures for Chip
Diode Devices”.

8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:https://www.macom.com/support

DC-0008899

Silicon PIN / NIP Diode Chips
PIN / NIP Diode Chips
Rev. V28

MACOM Technology Solutions Inc. (“MACOM”). All rights reserved.
These materials are provided in connection with MACOM’s products as a service to its customers and may be
used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate
agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in thesematerials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes tospecifications and product descriptions, which MACOM may make at any time, without notice. These materials
grant no license, express or implied, to any intellectual property rights.
THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED,RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULARPURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY ORCOMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAYRESULT FROM USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOMcustomers using or selling MACOM products for use in such applications do so at their own risk and agree to fully
indemnify MACOM for any damages resulting from such improper use or sale.
9MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:https://www.macom.com/support

DC-0008899