7th JSPS Silicon Symposium Timetable
Nov. 21 (Mon)

REGISTRATION

Desk Opening

16:00-20:00

Get Together Party

18:00-20:00

Nov. 22 (Tue)Nov. 23 (Wed)Nov. 24 (Thu)Morning
8:30-11:45
Opening Remarks
8:30-8:40
85 min8:40-10:05
Plenary I （１）A-1 H. Furuya
35 minCrystal Growth and Wafer Technology I（２）B-1 G. Kissinger
25 minB-2 W. Sugimura
25 minCoffee Break
10:05-10:30
75 min
10:30-11:45
Crystal Growth and Wafer Technology II（３）C-1 H. Sudo
25 minC-2 K. Kurita
25 minC-3 J. Park
25 minLunch Break11:45-13:20
Afternoon
13:20-16:40
100 min13:20-15:00
Advanced Characterization Technology I （4）D-1 H. C. Alt
25 minD-2 Y. Imai
25 minD-3 T. Schülli
25 minD-4 V. P. Markevich
25 minCoffee Break
15:00-15:25
75 min
15:25-16:40
Advanced Characterization Technology II （3）E-1 J. Lagowski
25 minE-2 M. Furuta
25 minE-3 H. Yamada-Kaneta
25 minBreak
16:40-17:00
57 min (3 min/paper)
17:00-17:57
Short Presentation for Poster
F-1 T. Fukuda
F-11 W. Fukushima
F-2 Y. Sano
F-12 A. Onaka-Masada
F-3 M. Porrini
F-13 A. Yamada
F-4 H. Habuka
F-14 Y. Hada
F-5 H. Suzuki
F-15 H. Fukuda
F-6 T. Taishi
F-16 S. Yamaoka
F-7 Y. Ino
F-17 K. Kobayashi
F-8 H. Kiuchi
F-18 W. Takeuchi
F-9 K. Shida
F-19 J. Inagaki
F-10 K. Omote
Dinner Break
17:57-19:30
Evening
19:30-22:00
30 min
19:30-20:00
After Dinner Talk I （1） (Memorial for Prof.Rozgonyi)
G-1 K. Sueoka, J. Park, T. Ono 30 min
Poster Presentation (F)20:00-22:00
Posters F-1 ~ F-19Morning
8:30-12:05
100 min8:30-10:10
Defects and Impurities I （4）H-1 T. Maeta
25 minH-2 S. Cottenier
25 minH-3 H. Yoshida
25 minH-4 N. Fukata
25 minCoffee Break
10:10-10:25
100 min10:25-12:05
Defects and Impurities II （4）I-1 M. Stavola
25 minI-2 M. D. McCluskey
25 minI-3 B. G. Svensson
25 minI-4 T. Ono
25 minMorning
85 minPlenary II （１）J-1 B. Sopori
Photovoltaic Si I （2）K-1 O. Isabella
K-2 J. Weber
Coffee Break75 minPhotovoltaic Si II （3）L-1 M. Tajima
L-2 S. Binetti
L-3 K. Kakimoto
Lunch BreakAfternoon
75 minPhotovoltaic Si III （3）M-1 S. Ostapenko
M-2 T. Suemasu
M-3 R. Sinton
Coffee Break
50 minOptional Tour available

Nov. 25 (Fri)
8:30-11:40
8:30-9:55

Morning50 min

8:30-12:10
8:30-9:20

Group IV Semiconductor-based Device Technology

35 min25 min25 min9:55-10:25
10:25-11:40

SiC, Nitride semiconductors and other wide-bandgap materials I（2）R-1 Y. Honda
R-3 S. Fujita
Coffee Break75 min25 min25 min25 min
11:40-13:30
13:30-16:05
13:30-14:45

25 min25 min10:10-10:40
10:40-11:55

SiC, Nitride semiconductors and other wide-bandgapmaterials II （3）S-1 B. Raghothamachar
S-2 H. Tsuchida
S-3 P. Bergman
Closing Remarks

25 min25 min25 min
14:45-15:15
15:15-16:05

Group IV Semiconductor-based Device TechnologyII（2）Q-1 K. Wada, Y. Ishikawa 25 min
Q-2 Y. Moriyama
25 min50 min
9:20-10:10

Farewell Dinner

I （2）N-1 J. O. Borland
25 minN-2 S. Nishizawa
25 minBreak
16:05-16:40
60 min (3 min/paper)
16:40-17:40
Short Presentation for Poster
O-1 H. Mori
O-11 S. Kawachi
O-2 T. Sugiura
O-12 T. ItoO-3 Y. Ohshita
O-13 Y. Mizuta
O-4 R. Yokogawa
O-14 H. Nakane
O-5 T. Shimura
O-15 R. Miyagawa
O-6 M. Tomita
O-16 T. Akiyama
O-7 H. Koyama
O-17 S. Nakano
O-8 K. Toyosaki
O-18 M. Uchino
O-9 K. Tadano
O-19 T. Shimizu
O-10 Y. Ishikawa
O-20 K. Suzuki
Dinner Break
17:40-19:30
Evening
19:30-22:00
30 min
19:30-20:00
After Dinner Talk II （１）P-1 H. Richter
30 minPoster Presentation (O)20:00-22:00
Posters O-1 ~ O-20

25 min25 min25 min
11:55-12:10