DATA SHEETSILICON POWER TRANSISTOR

2SC3569
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

The 2SC3569 is a mold power transistor developed for high-PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.

FEATURES• Mold package that does not require an insulating board or
insulation bushing• Low collector saturation voltage:VCE(sat) = 1.0 V MAX. (@ 0.7 A)• Fast switching speed:tf ≤ 1.0 µs MAX. (@ 0.7 A)• Wide base reverse-bias SOA:VCEX(SUS) = 450 V MIN. (@ 0.5 A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter

SymbolRatings

Unit

Collector to base voltage

VCBO

500

V

Collector to emitter voltage

VCEO

400

V

Electrode Connection

Emitter to base voltage

VEBO

7.0

V

2. Collector

Collector current (DC)

IC(DC)

2.0

A

Collector current (pulse)IC(pulse)*

4.0

A

Base current (DC)

IB(DC)

1.0A

Total power dissipation

PT (Tc = 25°C)

15W

Total power dissipationPT (Ta = 25°C)

2.0W

Junction temperature

Tj150°C

Storage temperature

Tstg−55 to +150°C

1. Base
3. Emitter* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan

©

2002
1998

2SC3569
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter

SymbolConditions

MIN.

TYP.

MAX.

Collector to emitter voltage

VCEO(SUS)IC = 0.5 A, IB1 = 0.1 A, L = 1 mH

400

V

Collector to emitter voltage

VCEX(SUS)1

IC = 0.5 A, IB1 = −IB2 = 0.1 A,
L = 180 µH, clamped

450

V

Collector to emitter voltage

VCEX(SUS)2

IC = 1.0 A, IB1 = 0.2 A, −IB2 = 0.1 A,
L = 180 µH, clamped

400

VICBO

VCB = 400 V, IE = 010µA

Collector cutoff current

ICER

VCE = 400 V, RBE = 51 Ω, Ta = 125°C1.0mA

Collector cutoff current

ICEX1

VCE = 400 V, VBE(OFF) = −1.5 V

10µA

Collector cutoff current

ICEX2

VCE = 400 V, VBE(OFF) = −1.5 V,
Ta = 125°C

1.0mA

Emitter cutoff current

IEBO

VEB = 5.0 V, IC = 010µA

DC current gainhFE1*

VCE = 5.0 V, IC = 0.2 A

20

DC current gainhFE2*

VCE = 5.0 V, IC = 0.5 A

10Collector saturation voltage

VCE(sat)*

IC = 0.7 A, IB = 0.14 A

1.0VBase saturation voltage

VBE(sat)*

IC = 0.7 A, IB = 0.14 A

1.2V

IC = 0.7 A, RL = 214 Ω,
IB1 = −IB2 = 0.14 A, VCC ≅ 150 V
Refer to the test circuit.

1.0µs

2.5µs

1.0µs

Collector cutoff current

Turn-on time

tonStorage time

tstg

Fall time

tf80* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION
MarkingM

LK

HFE1

20 to 40

30 to 60

40 to 80

Collector Current IC (mA)

Total Power Dissipation PT (W)

TYPICAL CHARACTERISTICS (Ta = 25°°C)

Case Temperature TC (°C)

2Unit

Data Sheet D16187EJ1V0DS

Collector to Emitter Voltage VCE (V)IC Derating dT (%)

Transient Thermal Resistance Rth(j-c) (°C/W)

2SC3569

Case Temperature TC (°C)

Ta = 25°C (without heatsink)(with infinite heatsink)Collector Current IC (A)Collector Current IC (A)Pulse Width PW (s)Collector to Emitter Voltage VCE (V)DC Current Gain hFECollector Saturation Voltage VCE(sat) (V)
Base Saturation Voltage VBE(sat) (V)Collector to Emitter Voltage VCE (V)Collector Current IC (mA)

Collector Current IC (mA)

Data Sheet D16187EJ1V0DS

3

Turn-On Time ton (µs)
StorageTime tstg (µs)
Fall Time tf (µs)

2SC3569

Collector Current IC (A)Base current
waveform

Collector current
waveform

4

Data Sheet D16187EJ1V0DS

2SC3569[MEMO]

Data Sheet D16187EJ1V0DS

5

2SC3569• The information in this document is current as of July, 2001. The information is subject to change
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M8E 00. 4