Complementary MOSFET
ELM56610CWA-S■General Description

http://www.elm-tech.com■Features

ELM56610CWA-S uses advanced
trench technology to provide excellent
Rds(on) and low gate charge.

N-channel

P-channel• Vds=100V• Id=2.3A• Vds=-100V• Id=-1.0A• Rds(on)=310mΩ(Vgs=10V) • Rds(on)=650mΩ(Vgs=-10V)• Rds(on)=320mΩ(Vgs=4.5V) • Rds(on)=700mΩ(Vgs=-4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

VdsVgsContinuous drain current(Tj=150°C)

Ta=25°C
Ta=70°C

Id

Pulsed drain current

Idm
Tc=25°C
Tc=70°C

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
100±20-100±20

2.3
1.8
4-1.0-0.5-4
2.0
1.3
150°C

-55 to 150°C

Max.

Unit

120
120°C/W°C/W

Operating junction temperature

Tj

2.0
1.3
150

Storage temperature range

Tstg-55 to 150

Power dissipation

PdVVAAW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolDevice

RθjaRθja

N-chP-ch■Pin configuration
SOT-26(TOP VIEW)
615243Typ.

■Circuit
Pin No.

Pin name123GATE1SOURCE2GATE24DRAIN256SOURCE1DRAIN1• N-ch• P-ch
D1G1

D2G2S1S2Rev.1.0
1/ 9

Complementary MOSFET
ELM56610CWA-S

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=80V, Vgs=0V

100
Ta=85°CGate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=4.5V, Vds≥5V5

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge
Gate-drain charge
Turn-on delay timeQgs

Turn-on rise timeTurn-off delay timeTurn-off fall time

Qg
Qgd
td(on)

V
110μA±1002.0nA
VA

Vgs=10V, Id=2.3A
Vgs=4.5V, Id=1.8A

310
320mΩ

Vds=20V, Id=1.5A
Is=1.3A, Vgs=0V

20.85

Vgs=0V, Vds=50V, f=1MHz

200
22pF
pF

13pF

Vgs=4.5V, Vds=50V,Id≡1.6A

tr
Vgs=4.5V, Vds=50V, Id≡1.3A
td(off) RL=39Ω, Rgen=1Ωtf

2.80

1.20
1.5

5.80

SVAnC

0.75

nC

1.402550nC
ns

20155030nsns

1025nsRev.1.02/ 9AFC6610W

Alfa-MOS

100V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56610CWA-S
TypicalCharacteristics
N-Channel■TypicalElectrical (andThermal)Characteristics (N-ch)©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 9

AFC6610W

Alfa-MOS

100V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56610CWA-S
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com

Page 5
Rev.1.0

4/ 9

AFC6610W

Alfa-MOS

100V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM56610CWA-S■Testcircuit and waveform(N-ch) )TypicalCharacteristics( N-Channel©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 6

Rev.1.0
5/ 9

Complementary MOSFET
ELM56610CWA-S

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain currentIdssVds=-80V, Vgs=0V-100
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds≥-15V-1.6

Static drain-source on-resistanceRds(on)600
620

Vds=-15V, Id=-0.5A
Is=-0.5A, Vgs=0V

2.8-0.75

Vgs=0V, Vds=-25V, f=1MHz

45050

Gfs
VsdIs

Input capacitance
Output capacitance

CissCossReverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise time

trId≡-1.0A, RL=75Ω
td(off)Rgen=6Ωtf

Turn-off delay timeTurn-off fall time

-1-30

μA

±100-2.5nAVA

Vgs=-10V, Id=-1.0A
Vgs=-4.5V, Id=-0.5A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

650
700
-1.30
-1.5
65030
Vgs=-10V, Vds=-75V
Id≡-0.5A
Vgs=-10V, Vds=-75V

9.0mΩ
SVA
pF
pF
pF

20.0

nC2.5nC3.51020nC
ns15203040nsns1530ns

Rev.1.0
6/ 9

AFC6610W

Alfa-MOS

100V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM56610CWA-S■TypicalElectrical andThermal )Characteristics (P-ch)
TypicalCharacteristics( P-Channel©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com

Page 7
Rev.1.0

7/ 9

Alfa-MOS

100V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
Typical Characteristics ( P-Channel ELM56610CWA-S)©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/ 9

AFC6610W

Alfa-MOS

100V N & P Pair

Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM56610CWA-S
TypicalCharacteristics■Test circuit
and waveform (P-ch)©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 9Rev.1.09/ 9