Complementary MOSFET
ELM53346CWA-N■General Description

http://www.elm-tech.com■Features

ELM53346CWA-N uses advanced
trench technology to provide excellent
Rds(on) and low gate charge.

N-channel••••

P-channel

Vds=40V
Id=15.0A
Rds(on)=28mΩ(Vgs=10V)
Rds(on)=38mΩ(Vgs=4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs
Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

Id

Pulsed drain current

Idm
Tc=25°C
Tc=70°C••••

Vds=-40V
Id=-12.0A
Rds(on)=45mΩ(Vgs=-10V)
Rds(on)=62mΩ(Vgs=-4.5V)

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
40±20-40±20VV

151240-12-10-40
1.8
1.2150°C

AA

Operating junction temperatureTj

2.0
1.5150Storage temperature range

Tstg-55 to 150-55 to 150°C

Typ.

Max.

Unit

56.0
62.5°C/W°C/W

Power dissipation

PdW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolDevice

RθjaRθja

N-chP-ch■Pin configuration
DFN8-3×3(TOP VIEW)■Circuit
Pin No.

Pin name12SOURCE1
GATE134SOURCE2
GATE2567DRAIN2DRAIN2DRAIN18DRAIN1• N-ch• P-ch
D1G1

D2G2S1S2Rev.1.0
1/ 8

Complementary MOSFET
ELM53346CWA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=32V, Vgs=0V40Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=10V, Vds≥5V20

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time

Qgs

Turn-on rise timeTurn-off delay timeTurn-off fall time

V110μA

±100
3.0nA
VA

Vgs=10V, Id=15.0A
Vgs=4.5V, Id=12.0A

2030

Vds=15V, Id=5.0A
Is=2A, Vgs=0V

250.85

Vgs=0V, Vds=20V, f=1MHz

850
110

pF
pF

Crss

75

pF

Qg

10.0
Vgs=4.5V, Vds=20V, Id≡5.0A

2838
1.20
1014.0mΩ
S
V
A

nC

2.8nC

Qgd
td(on)

3.2
612nC
nstr
Vgs=10V, Vds=20V, Id≡5.0A
td(off) RL=4.0Ω, Rgen=1.0Ω

10202036nsns

612nstf

Rev.1.02/ 8AFC3346W

Alfa-MOS

40V N & P Pair

Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM53346CWA-N■TypicalElectrical(andThermal) Characteristics (N-ch)
TypicalCharacteristics
N-Channel©Alfa-MOS Technology Corp.
Rev.A Mar. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

AFC3346W

Alfa-MOS

40V N & P Pair
Enhancement Mode MOSFET

Technology

Complementary MOSFET

ELM53346CWA-N
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Mar. 2012

http://www.elm-tech.com

www.alfa-mos.com
4/ 8

Rev.1.0
Page 5Complementary MOSFET
ELM53346CWA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-32V, Vgs=0V-40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds≥-5V-20

Static drain-source on-resistanceRds(on)μA±100-3.0nAVA

3448

Vds=-15V, Id=-5A
Is=-2A, Vgs=0V

20-0.8

Vgs=0V, Vds=-20V, f=1MHz

1100
145

pF
pF

115

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgd
td(on)

Turn-on rise time

trId≡-5.0A, RL=4Ω
td(off)Rgen=1Ωtf

Turn-off delay timeTurn-off fall time

-1-20

Vgs=-10V, Id=-12.0A
Vgs=-4.5V, Id=-10.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

Vgs=-4.5V, Vds=-20V
Id≡-5.0A
Vgs=-4.5V, Vds=-20V

13.04562-1.2-1020.0mΩ
S
V
A

nC

4.5

nC

6.5
40

80

nC
ns

55
30

10060

nsns

1220

ns

Rev.1.0
5/ 8

AFC3346W

Alfa-MOS

40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM53346CWA-N
TypicalCharacteristics( P-Channel■TypicalElectrical andThermal )Characteristics (P-ch)©Alfa-MOS Technology Corp.
Rev.A Mar. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page
Rev.1.06

6/ 8AFC3346W

Alfa-MOS

40V N & P Pair
Enhancement Mode MOSFET
Complementary MOSFET

Technology

ELM53346CWA-N

Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A Mar. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 8

AFC3346W

Alfa-MOS

40V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM53346CWA-N■Testcircuit and waveform
TypicalCharacteristics©Alfa-MOS Technology Corp.
Rev.A Mar. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/ 8