Complementary MOSFET
ELM54616CWSA-N■General Description

http://www.elm-tech.com■Features

ELM54616CWSA-N uses advanced
trench technology to provide excellent
Rds(on) and low gate charge.

N-channel••••

P-channel

Vds=30V
Id=8.0A
Rds(on)=18mΩ(Vgs=10V)
Rds(on)=22mΩ(Vgs=4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs
Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

Id

Pulsed drain current

Idm
Tc=25°C
Tc=70°C••••

Vds=-30V
Id=-8.0A
Rds(on)=18mΩ(Vgs=-10V)
Rds(on)=22mΩ(Vgs=-4.5V)

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
30±20-30±20VV

8.0
6.0
25-8.0-6.0-30
2.8
1.8150°C

AA

Operating junction temperature

Tj

2.8
1.8150Storage temperature range

Tstg-55 to 150-55 to 150

°C

Typ.

Max.

Unit

62.5
62.5°C/W°C/W

Power dissipation

PdW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolDevice

Rθja
RθjaN-chP-ch■Pin configuration
SOP-8(TOP VIEW)
18273645■Circuit
Pin No.

Pin name

12SOURCE1
GATE134SOURCE2
GATE2567DRAIN2DRAIN2DRAIN18DRAIN1• N-ch• P-ch
D1G1

D2G2S1S2Rev.1.0
1/ 8

Complementary MOSFET
ELM54616CWSA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

IdssVds=30V, Vgs=0V

30
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

0.5

On state drain current

Id(on) Vgs=10V, Vds≥5V15

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay timeQgs

Turn-on rise timeTurn-off delay timeTurn-off fall time

V
110μA

±100
1.8nA
VA

Vgs=10V, Id=8.0A
Vgs=4.5V, Id=6.0A

1314

Vds=15V, Id=10A
Is=3.0A, Vgs=0V24
0.8

Vgs=0V, Vds=15V, f=1MHz

800
180

pF
pF

Crss

70

pF

Qg

8.0
Vgs=4.5V, Vds=15V, Id≡10A

18
22
1.3
1.5

12.0mΩ
S
V
A

nC

2.0nC

Qgd
td(on)

2.3
815nC
nstr
Vgs=10V, Vds=15V, Id≡10A
td(off) RL=1.5Ω, Rgen=1.0Ω

8161528nsns816nstf

Rev.1.0
2/ 8

AFC4616WS

Alfa-MOS

30V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM54616CWSA-N■TypicalElectrical andThermal )Characteristics (N-ch)
TypicalCharacteristics( N-Channel©Alfa-MOS Technology Corp.
Rev.A March 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

AFC4616WS

Alfa-MOS

30V N & P Pair
Enhancement Mode MOSFET

Technology

Complementary MOSFET

ELM54616CWSA-N
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A March 2016

http://www.elm-tech.com

www.alfa-mos.com
Rev.1.0Page 54/ 8

Complementary MOSFET
ELM54616CWSA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-24V, Vgs=0V-30
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±25V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on)

Vgs=-10V, Vds≥-10V-30-5

Static drain-source on-resistanceRds(on)Vgs=-4.5V, Vds≥-5V
Vgs=-10V, Id=-8.0A

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitanceIsV

Vgs=-4.5V, Id=-6.0A
Vds=-10V, Id=-9.0A
Is=-2.3A, Vgs=0V

Ciss

μA

±100-2.0nA
VA

15181922-0.7

22mΩ

-1.3

S
V

-1.7

A

1600

pF

350
300

pF
pF

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CossCrssGate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timetd(on)
trVgs=-10V, Vds=-15V10122024

ns
nstd(off) Id≡-5.0A, RL=3Ω, Rgen=1Ω
tf

30
104520nsns

Turn-on rise timeTurn-off delay timeTurn-off fall time

Qg

Vgs=0V, Vds=-15V, f=1MHz-1-30

Vgs=-4.5V, Vds=-15V
Id≡-6.0A

2030

610nC
nCnC

Rev.1.0
5/ 8

AFC4616WS

Alfa-MOS

30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54616CWSA-N
TypicalCharacteristics( P-Channel■TypicalElectrical andThermal )Characteristics (P-ch)©Alfa-MOS Technology Corp.
Rev.A March 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 6
Rev.1.0

6/ 8

AFC4616WS

Alfa-MOS

30V N & P Pair
Enhancement Mode MOSFET

Technology

Complementary MOSFET
ELM54616CWSA-N

Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A March 2016

http://www.elm-tech.com

www.alfa-mos.com
Page
Rev.1.07

7/ 8

AFC4616WS

Alfa-MOS

30V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM54616CWSA-N
TypicalCharacteristics■Test circuitand waveform©Alfa-MOS Technology Corp.
Rev.A March 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/ 8