Complementary MOSFET
ELM54599CWA-N■General Description■Features

ELM54599CWA-N uses advanced trenchtechnology to provide excellent Rds(on) and lowgate charge.

• N-channel
Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V)
Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)• P-channel
Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V)
Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs-40±20-7.2

6.0-6.225
2.8-25
2.8

Tj,Tstg

1.8-55 to 150

1.8-55 to 150°C

SymbolDeviceMax.

Unit

RθjaRθja

N-chP-ch62.5
62.5°C/W°C/W

Id

Pulsed drain current

Idm
Tc=25°C

Power dissipationPd

Tc=70°C

Junction and storage temperature range

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
40±208.0

Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

http://www.elm-tech.com

VVAAW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

Steady-state
Steady-state■Pin configuration
SOP-8(TOP VIEW)

Typ.

■Circuit
Pin No.

Pin nameSOURCE1
GATE1SOURCE21827123364

GATE24556DRAIN2DRAIN278DRAIN1DRAIN1• N-ch• P-ch
D1G1

D2

G2
S1

S2

Rev.1.0
1/ 8

Complementary MOSFET
ELM54599CWA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=32V, Vgs=0V

40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=10V, Vds=5V

20

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
VsdIs

Input capacitance
Output capacitance

CissCoss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge
Gate-drain charge
Turn-on delay time

Qgs

Turn-on rise timeTurn-off delay timeTurn-off fall time

Qg
Qgd
td(on)

V
110μA

±100
3.0nA
VA

Vgs=10V, Id=8.0A
Vgs=4.5V, Id=6.0A

1620

Vds=15V, Id=5.0A
Is=2A, Vgs=0V

25
0.85

Vgs=0V, Vds=20V, f=1MHz850
110

pF
pF

75

pF

Vgs=4.5V, Vds=20V,
Id=5A

tr
Vgs=10V, Vds=20V, Id=5.0A
td(off) RL=4Ω, Rgen=1Ωtf

10.0

2228
1.20
1.5

14.0mΩ
SVAnC

2.8nC

3.2612nCns

10202036nsns

612ns

Rev.1.02/ 8

AFP4599W

Alfa-MOS

40V N & P Pair

Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54599CWA-N
TypicalCharacteristics
N-Channel■TypicalElectrical (andThermal) Characteristics (N-ch)©Alfa-MOS Technology Corp.
Rev.A Apr. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.03/ 8

AFP4599W

Alfa-MOS

40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54599CWA-N
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Apr. 2012http://www.elm-tech.com

www.alfa-mos.com
Page 5Rev.1.04/ 8

Complementary MOSFET
ELM54599CWA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-32V, Vgs=0V-40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain currentId(on) Vgs=-10V, Vds=-5V-20

Static drain-source on-resistanceRds(on)μA±100-3.0

nAVA

3450

Vds=-15V, Id=-5A
Is=-2A, Vgs=0V

20-0.8

Vgs=0V, Vds=-20V, f=1MHz

1100
145

pF
pF

115

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgd
td(on)

Turn-on rise timetr
Vgs=-4.5V, Vds=-20V
td(off) Id=-5A, RL=4Ω, Rgen=1Ω

Turn-off delay timeTurn-off fall time

-1-20

Vgs=-10V, Id=-7.2A
Vgs=-4.5V, Id=-6.2A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERSQg

V

Vgs=-4.5V, Vds=-20V
Id=-5A

tf

13.0

4260
-1.2
-1.7

20.0mΩ
SV
A

nC

4.5nC

6.5
4080

nC
ns

55
30

100
60

nsns

1220nsRev.1.05/ 8

AFP4599W

Alfa-MOS

40V N & P Pair

Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54599CWA-N■TypicalElectrical andThermal )Characteristics (P-ch)
TypicalCharacteristics( P-Channel©Alfa-MOS Technology Corp.
Rev.A Apr. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 6

Rev.1.0
6/ 8

AFP4599W

Alfa-MOS

40V N & P Pair
Enhancement Mode MOSFET
Complementary MOSFET

Technology

ELM54599CWA-N
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A Apr. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 8

AFP4599W

Alfa-MOS

40V N & P Pair

Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54599CWA-N
Typical Characteristics■Test circuit and waveform©Alfa-MOS Technology Corp.
Rev.A Apr. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/ 8