Complementary MOSFET
ELM54539CWSA-N■General Description■Features

ELM54539CWSA-N uses advanced trenchtechnology to provide excellent Rds(on) andlow gate charge.

• N-channel
Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V)
Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V)• P-channel
Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V)
Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs
Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

Id

Pulsed drain current

Idm
Tc=25°C

Power dissipation

http://www.elm-tech.com

Pd

Tc=70°C

Junction and storage temperature range

Tj,Tstg

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
30
±20
5.4-30±20-5.4

VV

4.0-4.220
2.8-302.8

1.8-55 to 150

1.8-55 to 150°C

Max.

Unit

62.5
62.5°C/W°C/W

AAW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

Steady-stateSteady-state■Pin configuration
SOP-8(TOP VIEW)

SymbolDeviceRθjaRθjaN-ch
P-ch

Typ.

■Circuit
Pin No.

Pin name
SOURCE1
GATE1SOURCE21827123364GATE24556DRAIN2DRAIN278DRAIN1DRAIN1• N-ch• P-ch
D1

G1

D2

G2
S1

S2

Rev.1.0
1/ 8

Complementary MOSFET
ELM54539CWSA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=24V, Vgs=0V

30
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.3

On state drain current

Id(on) Vgs=4.5V, Vds=5V

10

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
Vsd
Is

Input capacitance
Output capacitance

CissCoss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time

Qgs

Turn-on rise timeTurn-off delay timeTurn-off fall time

V130

μA

±100
2.1nA
VA

Vgs=10V, Id=5.0A
Vgs=4.5V, Id=4.7A

30
40

Vds=15V, Id=5.2A
Is=1.6A, Vgs=0V

130.8

Vgs=0V, Vds=20V, f=1MHz

700
75pF
pF

Crss

45pF

Qg

8.0
Vgs=4.5V, Vds=20V, Id=5.2A

36
46
1.3
1.5

12.0mΩ
SVAnC

1.6nC

Qgdtd(on)2.4812nC
nstr
Vgs=10V, Vds=15V, Id=1.0Atd(off) RL=15Ω, Rgen=6Ω

12281840nsns1018nstf

Rev.1.0
2/ 8

AFC4539WS

Alfa-MOS

30V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM54539CWSA-N■TypicalElectrical andThermal Characteristics(N-ch)
TypicalCharacteristics( N-Channel)©Alfa-MOS Technology Corp.
Rev.A July 2010

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

AFC4539WS

Alfa-MOS

30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54539CWSA-N
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2010

http://www.elm-tech.com

www.alfa-mos.com
Page 5

Rev.1.04/ 8

Complementary MOSFET
ELM54539CWSA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-24V, Vgs=0V-30
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds=-5V-25

Static drain-source on-resistanceRds(on)μA±100-2.5nAVA

5270

Vds=-10V, Id=-4.9A
Is=-1.7A, Vgs=0V

10-0.8

Vgs=0V, Vds=-15V, f=1MHz

500
100

pF
pF

55

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise timetr
Vgs=-10V, Vds=-15Vtd(off) Id=-1.0A, RL=15Ω, Rgen=6Ω

Turn-off delay timeTurn-off fall time-1-30

Vgs=-10V, Id=-5.4A
Vgs=-4.5V, Id=-4.2A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

Vgs=-10V, Vds=-15V
Id=-5.0A

tf

10.06290-1.3-1.7

18.0mΩ
SV
AnC

1.6nC

3.0
818nC
ns825

1850

ns
ns2535ns

Rev.1.05/ 8AFC4539WS

Alfa-MOS

30V N & P Pair
Complementary
MOSFETTechnology
Enhancement Mode MOSFET
ELM54539CWSA-N■Typical Electrical and Thermal Characteristics (P-ch)

http://www.elm-tech.com

Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2010www.alfa-mos.com
Page 6

Rev.1.0
6/ 8

AFC4539WS

Alfa-MOS

30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54539CWSA-N
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2010

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 8

AFC4539WS

Alfa-MOS

30V N & P Pair
Complementary MOSFETTechnology
Enhancement Mode MOSFET
ELM54539CWSA-N■Test circuit and waveform

http://www.elm-tech.com

Typical Characteristics©Alfa-MOS Technology Corp.
Rev.A July 2010www.alfa-mos.com
Page 8

Rev.1.08/ 8