Complementary MOSFET
ELM53366CWA-N■General Description

http://www.elm-tech.com■Features

ELM53366CWA-N uses advanced
trench technology to provide excellent
Rds(on) and low gate charge.

N-channel••••

P-channel

Vds=60V
Id=12.0A
Rds(on)=48mΩ(Vgs=10V)
Rds(on)=54mΩ(Vgs=4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs
Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

Id

Pulsed drain current

Idm
Tc=25°C
Tc=70°C••••

Vds=-60V
Id=-8.0A
Rds(on)=105mΩ(Vgs=-10V)
Rds(on)=115mΩ(Vgs=-4.5V)

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
60±20-60±20V
V

121030-8-6-30
1.8
1.2150°C

AA

Operating junction temperatureTj

2.0
1.5150Storage temperature range

Tstg-55 to 150-55 to 150°C

Typ.

Max.

Unit

56.0
62.5°C/W°C/W

Power dissipation

PdW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolDeviceRθjaRθja

N-chP-ch■Pin configuration
DFN8-3×3(TOP VIEW)■Circuit
Pin No.

Pin name

12SOURCE1
GATE134SOURCE2
GATE2567DRAIN2DRAIN2DRAIN18DRAIN1• N-ch• P-ch
D1G1

D2G2S1S2Rev.1.0
1/ 8

Complementary MOSFET
ELM53366CWA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=48V, Vgs=0V

60
Ta=85°CGate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

0.8

On state drain current

Id(on) Vgs=4.5V, Vds≥5V30

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time

Qgs

Turn-on rise timeTurn-off delay timeTurn-off fall timeV15μA

±100
2.5nA
VA

Vgs=10V, Id=12.0A
Vgs=4.5V, Id=10.0A

40
44

Vds=15V, Id=5.3A
Is=2A, Vgs=0V

240.8

Vgs=0V, Vds=30V, f=1MHz

890
85

pF
pF

Crss

48

pF

Qg

10.0
Vgs=5V, Vds=30V, Id≡5.6A

48
54
1.2
1015.0mΩ
S
V
A

nC

3.5nC

Qgd
td(on)

3.6
1015nCnstr
Vgs=4.5V, Vds=30V, Id≡5.0A
td(off) RL=6.8Ω, Rgen=6.0Ω

12252035nsns

1015nstf

Rev.1.02/ 8

AFC3366W

Alfa-MOS

40V N & P Pair
Complementary
MOSFET
Technology
Enhancement Mode MOSFET
ELM53366CWA-N■Typical Electrical and Thermal Characteristics (N-ch)

http://www.elm-tech.com

Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Feb. 2012www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

AFC3366W

Alfa-MOS

40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM53366CWA-N
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Feb. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 5

Rev.1.0
4/ 8Complementary MOSFET
ELM53366CWA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-48V, Vgs=0V-60
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-0.8

On state drain current

Id(on) Vgs=-10V, Vds≥-5V-20

Static drain-source on-resistanceRds(on)μA±100-2.5

nAVA

96104

Vds=-15V, Id=-3.2A
Is=-2A, Vgs=0V

12-0.8

Vgs=0V, Vds=-30V, f=1MHz

900
90

pF
pF

40pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
CossReverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgd
td(on)

Turn-on rise time

trId≡-3.0A, RL=7.5Ω
td(off)Rgen=3.0Ω
tf

Turn-off delay timeTurn-off fall time-1-20

Vgs=-10V, Id=-8.0A
Vgs=-4.5V, Id=-6.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERSQg

V

Vgs=-10V, Vds=-30VId≡-4.0A
Vgs=-10V, Vds=-30V

12.0

105
115
-1.2-1020.0mΩ
SV
A

nC

2.5nC

3.5
1020

nC
ns

630

1045

ns
ns

1225

ns

Rev.1.05/ 8

AFC3366W

Alfa-MOS

40V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM53366CWA-N■TypicalElectrical andThermal )Characteristics (P-ch)
TypicalCharacteristics( P-Channel©Alfa-MOS Technology Corp.
Rev.A Feb. 2012

http://www.elm-tech.com

www.alfa-mos.com

Page 6
Rev.1.0

6/ 8

AFC3366W

Alfa-MOS

40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM53366CWA-N
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A Feb. 2012

http://www.elm-tech.com

www.alfa-mos.com

Page 7
Rev.1.0

7/ 8

AFC3366W

Alfa-MOS

40V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM53366CWA-N■Test
circuit and waveform
TypicalCharacteristics©Alfa-MOS Technology Corp.
Rev.A Feb. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/ 8