Complementary MOSFET
ELM56332CESA-S■General Description■Features

ELM56332CESA-S uses advanced
trench technology to provide excellent
Rds(on) and low gate charge. ESD
protection is included.

N-channel

P-channel• Vds=20V• Id=1.2A• Rds(on)=320mΩ(Vgs=4.5V)• Rds(on)=420mΩ(Vgs=2.5V)• Rds(on)=580mΩ(Vgs=1.8V)• ESD protection■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs

Continuous drain current(Tj=150°C)

Ta=25°C
Ta=70°C

Id

Pulsed drain current

Idm
Tc=25°C

Power dissipationPd

Tc=70°C

Operating junction temperature
Storage temperature range

TjTstg■Pin configuration
SC-70-6(TOP VIEW)
6

15243

http://www.elm-tech.com• Vds=-20V• Id=-1.0A• Rds(on)=580mΩ(Vgs=-4.5V)• Rds(on)=780mΩ(Vgs=-2.5V)• Rds(on)=980mΩ(Vgs=-1.8V)• ESD protection

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
20±121.2-20±12-1.00.9
40.3-0.7-30.3

0.2-55 to 150-55 to 1500.2-55 to 150-55 to 150

VVA
AW°C°C■Circuit• N-chPin No.

Pin name1SOURCE1

2GATE134DRAIN2SOURCE256GATE2DRAIN1• P-ch
D2

D1

G2G1

S1S2

Rev.1.0
1/ 9

Complementary MOSFET
ELM56332CESA-S

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=16V, Vgs=0V

20V

Ta=85°C

15μA±11.0mAV

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA

0.3

On state drain current

Id(on) Vgs=4.5V, Vds≥5V

1.2

Static drain-source on-resistanceVgs=4.5V, Id=0.7A
Rds(on) Vgs=2.5V, Id=0.6A

230
280

320
420

Vgs=1.8V, Id=0.5A
Vds=10V, Id=1.0A
Is=1.0A, Vgs=0V

400
10.65

580

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCissmΩ

1.50

SV

0.6

A70pF

208pFpF

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CossCrss

Gate-source charge
Gate-drain charge

Qgs
Qgd

Vgs=4.5V, Vds=10V, Id≡1.2A

0.18
0.32

Turn-on delay timeTurn-on rise timeTurn-off delay timetd(on)
trVgs=4.5V, Vds=10V, Id≡1.2A

18202628ns
nstd(off) RL=20Ω, Rgen=1Ωtf

702511040nsns

Turn-off fall time

Vgs=0V, Vds=10V, f=1MHzAQg

1.06

1.38

nCnCnC

Rev.1.0
2/ 9

AFC6332ES

Alfa-MOS

20V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM56332CESA-S■TypicalElectrical andThermal )Characteristics (N-ch)
TypicalCharacteristics( N-Channel©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 9

AFC6332ES

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56332CESA-S

Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com

Page 5
Rev.1.0

4/ 9

AFC6332ES

Alfa-MOS

20V N & P PairTechnology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56332CESA-S
Typical■Test
Characteristics( N-Channel
circuit and waveform(N-ch))©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 6
Rev.1.05/ 9

Complementary MOSFET
ELM56332CESA-S

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-16V, Vgs=0V-20

VTa=85°C-1-5μA±1-1.0mA
V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA-0.3

On state drain current

Id(on) Vgs=-4.5V, Vds≥-5V-0.7

Static drain-source on-resistanceVgs=-4.5V, Id=-0.6A
Rds(on) Vgs=-2.5V, Id=-0.5A

380520580
780

Vgs=-1.8V, Id=-0.4A
Vds=-10V, Id=-0.4A
Is=-0.15A, Vgs=0V

690
1-0.65980

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCiss70

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

Coss
Crss

Gate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timetd(on)
Vgs=-4.5V, Vds=-10V
tr
Id≡-0.2A, RL=30Ω
td(off)Rgen=10Ωtf

Turn-on rise timeTurn-off delay timeTurn-off fall timeQgA

Vgs=0V, Vds=-10V, f=1MHz

Vgs=-4.5V, Vds=-10V
Id≡-0.25A-1.50

SV-0.6

A100

pF

20
101.0mΩpF
pF
1.30.10.3

nCnCnC

10101515nsns

40306050nsns

Rev.1.06/ 9

AFC6332ES

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56332CESA-S■TypicalElectrical andThermal )Characteristics (P-ch)
TypicalCharacteristics( P-Channel©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 7
Rev.1.07/ 9

AFC6332ES

Alfa-MOS20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56332CESA-S
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com

Page 8
Rev.1.0

8/ 9

AFC6332ES

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM56332CESA-S
TypicalCharacteristics( P-Channel■Test circuitand waveform(P-ch) )©Alfa-MOS Technology Corp.
Rev.A June 2014

http://www.elm-tech.com

www.alfa-mos.com
Page 9Rev.1.0
9/ 9