microSDカー ド
MLC:8-128GB
aMLC:4-64GB(ET1288+SanDisk 15nm MLC)

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microSD 4-128GB

REVISION HISTORY
Revision

Description

Date

V1.1

First released

August 2015

V2.1

For SanDisk 1Znm solution

January 2017

V2.2

Updated part number information

May 2017

V2.3

Added sMLC 4GB~32GB

May 2017

V2.4

Added Product Feature information

June 2017

V2.5

Added MLC 128GB and sMLC 64GB

August 2017

V2.6

April 2018

V2.7

1.Added ESD ability and water proof information
2.Modified power consumption information
Name changed from sMLC to aMLC.

V2.8

Added MLC 128GB and aMLC 64GB, 1.3 TBW

June 2020

V2.9Added 1.2 Product Features and 3.8 Dust proof

July 2020

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microSD 4-128GB

1. Product Introduction
1.1. Overview
The Industrial microSD Card is designed for demanding industrial applications.
The Industrial microSD Card is compatible with SD 3.0 and provides excellent performance.
The built-in auto ECC function can detect and correct errors during data transfer.
Moreover, the Industrial microSD Card supports Ultra High Speed (UHS) interface transfermode, provides high write/read data transfer rate, high random IOPS, sudden Power-Fails
protection, adaptive static wear-leveling, read/program disturb management, etc. It was
designed to meet the high quality, high reliability, high performance, and versatileenvironmental requirements.
1.2. Product Features⚫
⚫
⚫

Interface: 8 pins microSD standard interface
Compliant SD Card Specification 3.0
Density support:◼ MLC:8GB~128GB◼ aMLC (Advanced MLC, single bit per cell MLC): 4GB~64GB⚫

Bus Speed Mode:◼ DS-Default Speed mode: 3.3V signaling, frequency up to 25MHz, up to 12.5MB/sec◼ HS-High Speed mode: 3.3V signaling, frequency up to 50MHz, up to 25MB/sec◼ SDR12: 1.8V signaling, frequency up to 25MHz, up to 12.5MB/sec◼ SDR25: 1.8V signaling, frequency up to 50MHz, up to 25MB/sec◼ SDR50: 1.8V signaling, frequency up to 100MHz, up to 50MB/sec◼ SDR104: 1.8V signaling, frequency up to 208MHz, up to 104MB/sec◼ DDR50: 1.8V signaling, frequency up to 50MHz, sampled on both clock edges, upto 50MB/s

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⚫
⚫
⚫
⚫
⚫
⚫
⚫
⚫

Operating at -25°C to 85°C
Flash: MLC NAND Flash (SDTNSGAMA-008G)
Controller: ET1288
Program/Erase Cycle: 3,000 Cycles (MLC)
Program/Erase Cycle: 20,000 Cycles (aMLC)
Built-in ECC corrects up to 43 bits/1 KB
Read disturbance management (Auto-Refresh)
Adaptive wear levelingManagement of sudden power-fails

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microSD 4-128GB⚫
⚫
⚫
⚫

SMART Function support
Support CPRM (Content Protection for Recordable Media) of SD Card
Support Water & Dust proof IEC 60529 IP58
aMLC (Advanced MLC, single bit per cell MLC) support, enhance the performance andproduct endurance

1.3. TBW (Tera Bytes Written)
Capacity

4GB8GB

16GB

32GB

64GB

128GB

MLC

―

19.6TB

39.2TB

78.4TB

156.8TB

313.6TB

aMLC

65.3TB

130.6TB

261.2TB

522.4TB

1047.3TB―*The endurance of disk could be varying based on user behavior, NAND endurance cycles, and write amplification factor.
It is not guaranteed by flash vendor.
*Client workload by JESD-219A

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microSD 4-128GB
2 . microSD Card Interface Description
2.1 microSD Pin Assignment
Table 1: SD Bus Mode Pin Definition
Pin #Name

TypeSD Description

1

DAT2I/O

Data Line [Bit2]

2

CD/DAT3I/O

Card Detect / Data Line [Bit3]

3CMD

PPCommand / Response

4VDDS

Supply Voltage

5CLKIClock6VSSS

Supply Voltage Ground

7DAT0I/O

Data Line [Bit 0]

8DAT1I/O

Data Line [Bit 1]

Notes:
1) S: power supply; I: input; O: output using push-pull drivers; PP: I/O using push-pulldrivers.
2) The extended DAT Lines (DAT1-DAT3) are input on power up. They start to operate as
DAT lines after SET_BUS_WIDTH command. The Host shall keep its own
DAT1-DAT3 lines in input mode, as well, while they are not used. It is defined so, inorder to keep compatibility to Multi-media Cards.
3) After power up this line (Pin2) is input with 50Kohm pull-up (can be used for card
detection or SPI mode selection). The pull-up should be disconnected by user,
during regular data transfer, with SET_CLR_CARD_DETECT (ACMD42) command.
Table 2: SPI Bus Mode Pin Definition
Pin #Name

1

RSV2

CSTypeSD Description
ReservedI

Chip Select (neg true)

3

DIIData In4

VDDS

Supply Voltage

5SCLKI

Clock6VSSS

Supply Voltage Ground

7DOO

Data Out8RSVReserved5

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microSD 4-128GB

Figure 1: Functional Diagram

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microSD 4-128GB
3 . Specifications
3.1. Performance
Max. Data Transfer Rate
◼ Read: 90MB/s; Write: 70MB/s
3.2. NAND Flash Memory
Industrial microSD Card uses Multi Level Cell (MLC) NAND Flash memory, which isnon- volatility, high reliability and highspeed memory storage.
3.3. Power Requirement
3.3.1. DC Input Voltage◼ 2.7V to 3.6V
3.4. Temperature Range◼ -25°C to +85°C
3.5. Humidity
Relative Humidity: 5-95%, non-condensing
3.6. Water proof
Water proof level: IEC 60529 IPX8.
Test Condition

Referred standard

Depth of water 1.5m for 30 mins.

IEC 60529 IPX8

3.7. ESD Ability
Test Condition

Referred standard⚫ Contact discharge: ± 2KV, ± 4KV

SD Spec. Appendix D.1⚫ Air discharge: ± 4KV, ± 8KV, ± 15KVSD Spec. Appendix D.2

3.8. Dust proof
Dust proof level: IEC 60529 IP5X.
Test Condition

Referred standard

Depression of 2 KPa, Talcum powder 2kg/m³, 8 hrs. IEC 60529 IP5X

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microSD 4-128GB
4 . Electrical Specifications
4.1. General DC Characteristic
Table 3: Absolute Maximum Ratings
SymbolParameter

Min.

Max.

Unit

Note

Tstorage

Storage Temperature

-40

85°C

-Ta

Ambient Operating Temperature-2585°C-VI

3.3V External Input Voltage

-0.3

3.6

V

-

Table 4: Power Consumption
SymbolIRead

Parameter

Min.

Typ.

Max.

Unit

Read Current at 3.3V (High Speed Mode)-85200mA

Read Current at 1.8V (UHS-I Mode)-207800mA

Write Current at 3.3V (High Speed Mode)-

76200mAWrite Current at 1.8V (UHS-I Mode)-180800mA

Standby Current

-0.53

15mA

IWriteISTBY

4.2. Bus Operation Conditions for 3.3V Signaling
4.2.1 Threshold Level for High Voltage Range
Table 5: Threshold Level for High Voltage
Parameter

SymbolMinMax

Unit

Supply Voltage

VDD

2.7

3.6

V

Output High Voltage

VOH

0.75* VDD

Output Low Voltage

VOL

Input High Voltage

VIH

Input Low Voltage

VIL

RemarkV

IOH=2mA VDD min

0.125* VDD

V

IOL=2mA VDD min

0.625* VDD

VDD+0.3

V

Vss-0.30.25*VDD

V250msFrom 0V to VDD min

RemarkPower Up Time4.2.2 Peak Voltage and Leakage Current
Table 6: Peak Voltage and Leakage Current
Parameter
Peak voltage on all lines

SymbolMinMax

Unit-0.3

VDD+0.3

V-1010uA-1010uA

All Inputs
Input Leakage Current
All Outputs
Output Leakage Current

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microSD 4-128GB

4.2.3 Bus Signal Line Load
Table 7: Bus Operating Conditions - Signal Line's Load
Parameter

SymbolMinMax

Unit

Pull-up resistance

RCMD
RDAT

10100KΩTo prevent bus floating

Total bus capacitance foreach signal line

CL40pF

1 card CHOST+CBUS shall not exceed 30pF

Card capacitance foreach signal pin

CCARD

10pF

16nH90KΩ

May be used for card detection

5uF

To prevent inrush current

Maximum signalinductancePull-up resistance insidecard(pin1)

RDAT3

Capacity Connected toPower LineCC

10Remark

4.2.4 Bus Signal Levels
As the bus can be supplied with a variable supply voltage, all signal levels are related to the supplyvoltage.

Figure 2: Bus Signal Levels
To meet the requirements of the JEDEC specification JESD8-1A and JESD8-7, the card input and outputvoltages shall be within the specified ranges shown in Table 6 for any VDD of the allowed voltage range.

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microSD 4-128GB

4.2.5 Bus Timing (Default)

Figure 3: Card input Timing (Default Speed Card)

Figure 4: Card Output Timing (Default Speed Mode)
Table 8: Bus Timing-Parameters Values (Default Speed)
Parameter

Symbol

Min.

Max

Unit

RemarkClock CLK （All values are referred to min（VIH）and max（VIL）
Clock frequency data transfer

fpp025MHz

CCARD ≤ 10pF (1 card)

Clock frequency Identification

fOD0(1)/100400KHz

CCARD ≤ 10pF (1 card)

Clock low time

tWL

10ns

CCARD ≤ 10pF (1 card)

Clock high time

tWH

10ns

CCARD ≤ 10pF (1 card)

Clock rise time

tTLH

10ns

CCARD ≤ 10pF (1 card)

Clock fall time

tTHL

10ns

CCARD ≤ 10pF (1 card)

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microSD 4-128GB

Inputs CMD, DAT (referenced to CLK)
Input set-up time

tISU

5ns

CCARD ≤ 10pF (1 card)

Input hold time

tTH

5ns

CCARD ≤ 10pF (1 card)

Output Delay time during Data
Transfer ModetODLY014ns

CL ≤ 40pF (1 card)

Output Hold time

tOH

050nsCL ≤ 40pF (1 card)

Outputs CMD, DAT (referenced to CLK)

(1) 0 Hz means to stop the clock. The given minimum frequency range is for cases were continues clock isrequired (refer to Chapter 4.4-Clock Control)

4.2.6 Bus Timing (High-Speed Mode)

Figure 5: Card Input Timing (High Speed Card)

Figure6: Card Output Timing (High Speed Mode)

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microSD 4-128GB

Table 9 : Bus Timing – Parameters Values(High Speed)
ParameterSymbolMin.

MaxUnit

RemarkClock CLK （All values are referred to min（VIH）and max（VIL）
Clock frequency data transfer
Clock low time
Clock high time
Clock rise time
Clock fall time
Inputs CMD, DAT (referenced to CLK)
Input set-up time
Input hold time
Outputs CMD, DAT (referenced to CLK)

MHzns
ns
ns
ns

CCARD ≤CCARD ≤CCARD ≤CCARD ≤CCARD ≤

6ns

CCARD ≤ 10pF (1 card)

2ns

CCARD ≤ 10pF (1 card)ns

CL ≤ 40pF (1 card)

nspF

CL ≥ 15pF (1 card)
1 card

fpp
tWL
tWH
tTLH
tTHL

077tISUtTH50

3314tODLY
Output Delay time during Data Transfer Mode
Output Hold time
2.5tOH
40CLTotal System capacitance for each line11) In order to satisfy sever timing, host shall drive only one card.

10pF (1 card)
10pF (1 card)
10pF (1 card)
10pF (1 card)
10pF (1 card)

4.3 Bus Operation Conditions for 1.8V Signaling
4.3.1 Threshold Level for High Voltage Range
Table 10: Threshold Level for High Voltage
Parameter

SymbolMinMax

Unit

Supply Voltage

VDD

2.7

3.6VRegulator Voltage

VDDIO

1.7

1.95

V

Generated by VDD

Output High Voltage

VOH

1.4

V

IOH=2mA VDD min

Output Low Voltage

VOL

IOL=2mA VDD min

Input High Voltage
Input Low Voltage

0.45

VVIH

1.27

2.0

VVIL

Vss-0.3

0.58

VRemark

4.3.2 Peak Voltage and Leakage Current
Table 11: Peak Voltage and Leakage Current
Parameter
Input Leakage Current

SymbolMinMaxUnit-22uA

12

RemarkDAT3 pull-up is disconnected

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microSD 4-128GB

4.3.3 Bus Timing Specification in SDR12, SDR25, SDR50 and SDR104 Modes
4.3.3.1 Clock Timing

Figure 7: Clock Signal Timing
Table 12: Clock Signal Timing
SymboltCLKMinMax

Unit

Remark

4.8-ns208MHz (Max.), Between rising edge, VCT=0.975V-tCR, tCF

0.2* tCLK

nstCR, tCF < 2.00ns (max.) at 208MHz, CCARD=10pF
tCR, tCF < 2.00ns (max.) at 100MHz, CCARD=10pF
The absolute maximum value of tCR, tCF is 10ns
regardless of clock frequency

Clock Duty

3070%

4.3.3.2 Card Input Timing

Figure 8: Card Input Timing
Table 13: SDR50 and SDR104 Input Timing
SymbolMinMaxUnit

SDR104 modetIS

1.40-ns

CCARD = 10pF, VCT = 0.975V

tIH0.80

ns

CCARD = 5pF, VCT = 0.975V

SymbolMinMaxUnit

SDR12, SDR25 and SDR50 modestIS

3.00

-ns

CCARD = 10pF, VCT = 0.975V

tIH

0.80

-ns

CCARD = 5pF, VCT = 0.975V

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microSD 4-128GB

4.3.3.3 Card Output Timing
4.3.3.3.1 Output Timing of Fixed Data Window (SDR12, SDR25 and SDR50)

Figure 9: Output Timing of Fixed Date Window
Table 14: Output Timing of Fixed Data Window
SymbolMinMax

Unit

RemarktODLY-7.5

nstCLK ≥ 10.0ns, CL=30pF, using driver Type B,
for SDR50.

14nstCLK ≥ 20.0ns, CL=40pF, using driver Type B,
for SDR25 and SDR12.

-ns

Hold time at the tODLY (min.). CL=15pF

tODLY
1.5tOH

4.3.3.3.2 Output Timing of Variable Window (SDR104)

Figure 10: Output Timing of Variable Data Window
Table 15: Output Timing of Variable Data Window
SymbolMinMax

UnittOP-2UI

Card Output Phase

ΔtOP-350

+1550

ps

Delay variation due to temperature change after tuningtODW

0.60-UItODW = 2.88ns at 208MHz14Remark

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microSD 4-128GB

5. Mechanical Dimensions
The mechanical dimensions of industrial microSD card were basically followed
the mechanical form factor definitions on microSD card specifications which constructedby SD card association.

Figure 12: Side View

Figure 11: Top View

Figure 13: Bottom View

15

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microSD 4-128GB

6. Ordering Information
Flash Type

MLC
MLC

aMLCsMLC

Part Number
EMH08GMBWGBECD
EMH16GMBWGBECDEMH32GMBWGBECDEMH64GMBWGBECDEMX12GMBWGBECE
EMH04GPBWGBECDA
EMH08GPBWGBECDA
EMH16GPBWGBECDAEMH32GPBWGBECDAEMX64GPBWGBECEA

16Capacity
8GB
16GB
32GB
64GB
128GB
4GB
8GB
16GB
32GB
64GB

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