microSDカー ド 512MB-2GB(ET1268+KIOXIA[Toshiba] 24/32nm SLC)

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株式会社アドテック

microSD 512MB-2GB

REVISION HISTORY
Revision

Description

Date

V1.1

First released

August 2015

V1.2

Updated Humidity information

April 2017

V1.3

Added Product Feature information

May 2017

V1.4

Added 512MB Capacity and Support CPRM

June 2017

V1.5

Changed the microSD SLC 512MB Flash from
TC58NVG3S0FTAI0 to TC58NVG2S0HTAI0

August 2017

V1.6

Added ESD ability and water proof information

April 2018

V1.7

Added 1.2 Product Features, 1.3 TBW and 3.8 Dust proof

July 2020

V1.8

Added 4.3 Bus Timing (Append Default Speed Mode)

September 2021

2Sep. 2021 Rev1.8

microSD 512MB-2GB

1. Product Introduction
1.1. Overview
The Industrial microSD Card is designed for demanding industrial applications
especially for portable devices.

The microSD Card is compatible with SD 2.0 andprovides excellent performance. The built-in auto ECC function can also detect andcorrect errors during data transfer. Moreover, Industrial microSD Card provides highwrite/read speed and high IOPS, it was designed to meet the security, highperformance, and environmental requirements.
1.2. Product Features⚫
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Interface: 8 pins microSD standard interface
Compliant SD Card Specification 2.0
Capacity: 512MB, 1GB, 2GB
Variable Clock Rate
◼ Default Mode: 0-25 MHz, up to 12.5MB/s Interface Speed◼ High-Speed Mode: 0-50 MHz, up to 25MB/s Interface Speed⚫

Operating at -40°C to 85°C⚫

Flash: SLC NAND Flash (512MB: TC58NVG2S0HTAI0 ,1GB/2GB:
TC58NVG3S0FTAI0)
Controller: ET1268
Program/Erase Cycle: 60,000 Cycles
Built-in ECC corrects up to 30 bits/1 KB
Read disturbance management (Auto-Refresh)
Adaptive wear levelingManagement of sudden power-fails
SMART Function support (Dedicated software support)
Support CPRM (Content Protection for Recordable Media) of SD Card
Support Water & Dust proof IEC 60529 IP58

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1.3. TBW (Tera Bytes Written)
Capacity

512MB

1GB2GBSLC

25.2TB

50.4TB

98.2TB*The endurance of disk could be varying based on user behavior, NAND endurance cycles, and write amplification factor.
It is not guaranteed by flash vendor.
*Client workload by JESD-219A

3Sep. 2021 Rev1.8

microSD 512MB-2GB2 . microSD Card Interface Description
2.1 microSD Pin Assignment
Table 1: SD Bus Mode Pin Definition
Pin #Name

TypeSD Description

1DAT2I/O

Data Line [Bit2]

2

CD/DAT3

I/O

Card Detect / Data Line [Bit3]

3CMD

PP

Command / Response

4

VDD

S

Supply Voltage

5

CLKI

Clock

6

VSS

S

Supply Voltage Ground

7

DAT0

I/O

Data Line [Bit 0]

8

DAT1

I/O

Data Line [Bit 1]

Notes:
1) S: power supply; I: input; O: output using push-pull drivers; PP: I/O using push-pulldrivers.
2) The extended DAT Lines (DAT1-DAT3) are input on power up. They start to operate
as DAT lines after SET_BUS_WIDTH command. The Host shall keep its own
DAT1-DAT3 lines in input mode, as well, while they are not used. It is defined so, inorder to keep compatibility to Multi-media Cards.
3) After power up this line (Pin2) is input with 50Kohm pull-up (can be used for card
detection or SPI mode selection). The pull-up should be disconnected by user,
during regular data transfer, with SET_CLR_CARD_DETECT (ACMD42) command.
Table 2: SPI Bus Mode Pin Definition
Pin #Name

TypeSD Description

1RSV2CSI

Chip Select (neg true)

3DII

Data In

4VDDS

Supply Voltage

5SCLKIClock

6VSSS

Supply Voltage Ground

7DOO

Data Out

8

RSVReserved

Reserved

4

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microSD 512MB-2GB

Figure 1: Functional Diagram

5

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microSD 512MB-2GB

3 . Specifications
3.1. Performance
Max. Data Transfer Rate
◼ Read: 23MB/s; Write: 16MB/s
3.2. NAND Flash Memory
Industrial SD Card uses Single Level Cell (SLC) NAND Flash memory, which isnon-volatility, high reliability, and high-speed memory storage. There are only twostatuses 0 or 1 of one cell.
3.3. Power Requirement
3.3.1. DC Input Voltage◼ 2.7V to 3.6V
3.4. Temperature Range◼ -40°C to +85°C
3.5. Humidity
Relative Humidity: 5-95%, non-condensing
3.6. Water proof
Water proof level: IEC 60529 IPX8.
Test Condition

Referred standard

Depth of water 1.5m for 30 mins.

IEC 60529 IPX8

3.7. ESD Ability
Test Condition

Referred standard

Contact discharge: ± 2KV, ± 4KV

SD Spec. Appendix D.1

Air discharge: ± 4KV, ± 8KV, ± 15KVSD Spec. Appendix D.2

3.8. Dust Proof
Dust proof level: IEC 60529 IP5X.
Test Condition

Referred standard

Depression of 2 KPa, Talcum powder 2kg/m³, 8 hrs. IEC 60529 IP5X

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microSD 512MB-2GB

4 . Electrical Specifications
4.1. General DC Characteristic
Table 3: Absolute Maximum Ratings
SymbolParameter

Min.

Max.

Unit

Note

Tstorage

Storage Temperature

-50

95°C

-Ta

Ambient Operating Temperature-4085°C-VI

3.3V External Input Voltage

-0.3

3.6V-

Table 4: Power Consumption
SymbolParameter

Min.

Typ.

Max.

Unit

IRead

Read Current at 3.3V

-62200mA

IWriteWrite Current at 3.3V

-73200mA

ISTBY

Standby Current-0.1415mA

4.2. Bus Signal Line Loading
Table 5: Bus Signal Line Loading
SymbolParameter

MinMax

Unit

Remark

RCMD

Pull-up resistance for SD_CMD Line

25100KΩTo prevent bus floating

RDAT

Pull-up resistance for SD_DATA Line

25100KΩTo prevent bus floating

CCARD

Card capacitance for each signal pin-10pF

For single card

LL

Signal Line Inductance-16nH7Sep. 2021 Rev1.8microSD 512MB-2GB

Table 6: DC Characteristics of I/O Interface
SymbolParameter

Min.

Max.

Unit

VIH

Input High Voltage

0.625 x VI

VI +0.3

VVIL

Input Low Voltage-0.3

0.25 x VI

V

VOH

Output High Voltage

0.75 x VI-V

VOL

Output Low Voltage-0.125 x VI

V

IOH

Output High Current

-16

-mA

IOL

Output Low Current-16mA

Figure 2: Bus Signal Level

4.3. Bus Timing
4.3.1 Bus Timing (Default Speed Mode)

Figure 3: Card input Timing (Default Speed Card)8

Sep. 2021 Rev1.8

microSD 512MB-2GBFigure 4: Card Output Timing (Default Speed Mode)
Table 7: Bus Timing-Parameters Values (Default Speed)
Parameter

Symbol

Min.

Max

Unit

RemarkClock CLK （All values are referred to min（VIH）and max（VIL）
Clock frequency data transfer

fpp

025

MHz

CCARD ≤ 10pF (1 card)

Clock frequency Identification

fOD0(1)/100400

KHz

CCARD ≤ 10pF (1 card)

Clock low time

tWL

10ns

CCARD ≤ 10pF (1 card)

Clock high time

tWH

10ns

CCARD ≤ 10pF (1 card)

Clock rise time

tTLH

10ns

CCARD ≤ 10pF (1 card)

Clock fall time

tTHL

10nsCCARD ≤ 10pF (1 card)

Inputs CMD, DAT (referenced to CLK)
Input set-up time

tISU

5nsCCARD≤

10pF (1 card)

Input hold timetTH

5nsCCARD≤

10pF (1 card)

Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
Transfer Mode

tODLY

014ns

CL ≤

40pF (1 card)

Output Hold time

tOH

050ns

CL ≤40pF (1 card)(1) 0 Hz means to stop the clock. The given minimum frequency range is for cases were continues clock isrequired.

9Sep. 2021 Rev1.8

microSD 512MB-2GB4.3.2 Bus Timing (High-Speed Mode)

Figure 5: Card Input Timing (High Speed Card)

Figure 6: Card Output Timing (High Speed Mode)
Table 8 : Bus Timing – Parameters Values(High Speed)
Parameter

Symbol

Min.

Max

Unit

RemarkClock CLK （All values are referred to min（VIH）and max（VIL）
Clock frequency data transfer
Clock low time
Clock high time
Clock rise time
Clock fall time
Inputs CMD, DAT (referenced to CLK)
Input set-up time
Input hold time
Outputs CMD, DAT (referenced to CLK)

MHznsnsnsns

CCARD ≤CCARD ≤CCARD ≤CCARD ≤CCARD ≤6ns

CCARD ≤ 10pF (1 card)

2ns

CCARD ≤ 10pF (1 card)ns

CL ≤ 40pF (1 card)

nspF

CL ≥ 15pF (1 card)
1 card

fpp
tWL
tWH
tTLH
tTHL

077tISUtTH

50

33tODLY
14Output Delay time during Data Transfer Mode
Output Hold time
2.5
tOH
40
CLTotal System capacitance for each line11) In order to satisfy sever timing, host shall drive only one card.

10

10pF (1 card)
10pF (1 card)
10pF (1 card)
10pF (1 card)
10pF (1 card)

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microSD 512MB-2GB

5. Mechanical Dimensions
The mechanical dimensions of industrial microSD card were basically followed
the mechanical form factor definitions on microSD card specifications whichconstructed by SD card association.

Figure 8: Side View

Figure 7: Top View

Figure 9: Bottom View

11Jul. 2020 Rev1.7

microSD 512MB-2GB

6. Ordering Information
Part Number
EMR512SITCCEBF
EMR01GSITDBEBB
EMR02GSITDBEBBCapacity
512MB1GB2GB12Sep. 2021 Rev1.8