1.3-µm Range Vertical-Cavity Surface-Emitting
Laser (VCSEL) Module
by Yoshinobu Nekado * and Masayuki Iwase *We have developed an optical module using a vertical-cavity surface-emitting
laser (VCSEL) chip based on a new material—GaInNAsSb and having a lasing
wavelength in the 1300-nm band. This module has a structure that takes full advantage of thepotential of this VCSEL chip, while eliminating components such as the lens, isolator, etc. Useof a passive alignment assembly structure using the original surface mounting (assembly) andhigh-precision molded plastic package makes for easier assembly, achieving this low-cost, ultracompact (mini-TOSA size) module. The characteristics obtained include coupling efficiency tosingle-mode fiber of above 60 % lensless, optical output power of -5 dBm or better, and 2.5
Gbps 20-km isolatorless signal transmission has been confirmed. This module will in future
be applicable in compact transceivers (SFF, SFP, XFP and other standards), for which market
growth is anticipated.

ABSTRACT1.

INTRODUCTION

Optical modules having as their light source a VCSEL
chip are already on the market in an 850-nm version for
short-haul multi-mode transmission in data communications. And development work is actively under way at thepresent time on 1300-nm VCSEL chips for medium- andlong-haul single-mode transmission, primarily for telecommunications applications.
Furukawa Electric has in the past developed FabryPerot (FP) and distributed feedback (DFB) surfaceemitting lasers for medium- and long-haul single-mode
transmission applications, and has introduced the related
modules commercially 1)~4).
We have long been engaged in VCSEL chip development, and for 1300-nm single-mode transmission we
have embarked on the use of GaInNAsSb, a new and proprietary material system that upgrades crystal quality andcharacteristics.
Currently, within the growth in demand for access systems, Ethernet, etc., there is a need for the requisite system components (transceivers, etc.) to be lower in costand more compact, together with a trend toward standardized specifications. The same is true of the laser lightsources for optical modules. For example there will be
demand for large numbers of smaller, lower-cost opticalmodule light sources that can be incorporated into small
form factor (SFF) and small form factor pluggable (SFP)
transceiver modules for 2.5-Gbps transmission, or XFP(XFPMSA.org standard) transceiver modules for 10-Gbps
transmission, which, it is expected, will become the mainstream of compact transceiver modules.
* FITEL Photonics Lab., R&D Div.

Here we report on the development of a module ofa size for a mini-transmitter optical subassembly (miniTOSA) using a 1300-nm VCSEL chip, and capable ofbeing mounted in a compact transceiver.
The development of the VCSEL chip and module
reported here has been carried out with the assistanceof funding for commercialization and development for
fiscal year 2002 from the New Energy and Industrial
Technology Development Organization (NEDO).

2.

VCSEL CHARACTERISTICS &DEVELOPMENT TARGETS

2.1 Characteristics
Light sources for optical modules using laser diode chips
have in the past used FP or DFB laser chips, which emit
light from the edge of the chip. In VCSELs, by contrast,
a mirror and an active layer are deposited perpendicular to the wafer surface during crystal growth to form aresonance cavity, so that light is emitted vertically fromthe wafer surface. Since the planes of optical emission
are aligned on a single surface of the wafer, it is easy toachieve multi-channel arraying of light sources. Further,edge-emitting lasers have had to be cut and tested individually, whereas with the VCSELs testing can be done in
the wafer state.
In addition the optical beam emitted is cylindrical inshape, so that the mode field diameter (MFD) can bemade about the same as the optical fiber size of 7 to 9 µm.
Thus in designing a module the coupling efficiency withthe fiber can be increased, so that the lens that was formerly needed can be eliminated. It has the further advantage that, being robust with respect to returned light fromthe optical circuitry, no isolator is needed.

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1.3-µm Range Vertical-Cavity Surface-Emitting Laser (VCSEL) Module

Accordingly an optical module light source using a
VCSEL chip can be made at lower cost than those using
a conventional edge-emitting laser.

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2.2 Development Targets
At the outset of the project to develop a VCSEL module,
the following targets were set:
To obtain characteristics equivalent to a DFB laser module, and support interchangeability with it.
(1) To take advantage of the VCSEL and eliminate bothlens and isolator.
(2) To achieve mini-TOSA size (OD of 4 mm or less) toallow mounting in an SFF or SFP transceiver module.
(3) To comply with SONET/SDH standards for 2.5-Gbps
transmission, OC-48/STM-16 and S16.1.
(4) To eliminate high-cost components and develop acheaper, simpler assembly method, and achieve afabrication cost one-third that for DFB laser modules.
The SONET/SDH standards referred to in (3) are shownin detail in Table 1. The S16.1 standard is for a transmission distance of 15 km, and L16.1 is the standard for 40
km. Obviously the target was L16.1 for long-distancetransmission but this simultaneously would require ahigher optical output and would greatly depend on the
optical power of the VCSEL. For this reason we initiallyset ourselves the goal of satisfying S16.1, with a highlensless coupling efficiency of above 60% for the module.

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Figure 1

3.

Typical far-field pattern of VCSEL chip.

BASIC CONSIDERATIONS

3.1 Coupling between VCSEL and Optical Fiber
3.1.1 Far-field Pattern for VCSEL Chip
Figure 1 shows a typical far-field pattern (FFP) for the
1300-nm VCSEL chip developed in this work.
The MFD of a conventional edge-emitting laser
depends on the design but in general is an oval in shape,
1 to 3 µm in diameter.

Communications parameters specified for ITU-T G.957 optical interface SDH.

Digital signal Nominal bit rate

bit/s

Application code

STM-16 2.488G
S-16.1L-16.1Distance

km

15

40

Operating wavelength range

nm

1260 ~ 1360

1280 ~ 1335

SLM

SLM

SLM

-maximum RMS width

nm

—

—

-maximum -20dB width

nm

1

1

-minimum side mode suppression ratio

dB

30

30

-maximum

dBm

0

3

-minimum

dBm

-5

-2

Minimum extinction ratio

dB

8.2

8.2

Attenuation range

dB

0 ~ 1210 ~ 24

Maximum dispersion

Transmitter at reference point S
Source type
Spectral characteristics

Mean launched power

Optical path between S and R

ps/nm

NA

NA

Minimum optical return loss of cable plant at S, including any connectors

dB

24

24

Maximum discrete reflectance between S and R

dB

-27

-27

Minimum sensitivity

dBm

-18

-27

Minimum overload

dBm

0

-9

Maximum optical path penalty

dB

1

1

Maximum reflectance of receiver, measured at R

dB

-27

-27

Receiver at reference point R

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1.3-µm Range Vertical-Cavity Surface-Emitting Laser (VCSEL) Module

The FFP or distribution pattern for VCSEL emission
forms concentric circles, and in the example shown in
Figure 1, at a bias current of 6.0 mA (bias 2.3 V) has a
FWHM of 9.8°, l/e2 of 11.7° and MFD of up to approximately 9.0 µm, thereby yielding a higher optical couplinglevel than edge-emitting lasers with smaller MFD. That
is to say, the closer the spot size of the VCSEL is to the
MFD of the optical fiber, the lower the optical couplingloss with the fiber will be, making it unnecessary to havethe lens that is required with an edge-emitting laser module.
Figure 2 shows the distribution of the coupling tolerance of a butt joint between a VCSEL and a single-mode
fiber. Since the VCSEL and optical fiber MFDs form concentric circles, the coupling tolerance distribution is theshape of concentric circles.

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Figure 3

Butt-joint optical coupling model.

Let us refer to Figure 3 for the first of these—the butt
joint optical coupling model. This is the model currently
in general use, and because in using an edge-emitting
laser it is necessary to interpose a lens between the laser
chip and the optical fiber, optical coupling efficiency in theorder of 60 % can be obtained.
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Simulation of butt-joint optical coupling model.

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Coupling tolerance between VCSEL and single-mode
fiber.

Simulation of Optical Coupling between VCSEL
and Fiber
In designing the module a simulation was run of the relationship of the optical coupling efficiency (optical coupling loss) between the VCSEL and a single-mode fiber,with the distance and positional displacement between
the VCSEL and the fiber as parameters. The amount of
positional displacement corresponds to the component
precision of the module and the component mounting
precision during assembly. Since we have presupposed adecrease in costs and a smaller module, we considered amodel in which VCSEL light impinges on the fiber without
the use of a lens. Consideration was specifically given
to two models: 1) the butt joint optical coupling model—
a method of coupling the VCSEL and fiber in a butt joint;and 2) the reflection-type optical coupling model—amethod of coupling the VCSEL and fiber taking advantage of reflection at the fiber end.

Figure 4 shows a simulation of the results for couplingin which no lens is used between the VCSEL chip andthe optical fiber. These results are for a VCSEL with an
MFD of 7.5 µm and an optical fiber with an MFD of 9.0µm, with a plastic encapsulating material with a refractive index of 1.41 between the VCSEL and the fiber. Theyshow the relationship between optical coupling loss andthe distance Z from the optical fiber to the emitting planeof the VCSEL, with the positional displacement between
the VCSEL and the fiber in the X,Y plane direction as aparameter. The shorter the distance Z and the smaller the
displacement, the higher the optical coupling efficiency
that can be obtained.
If we assume, for example, that fabrication of the opticalmodule assembly can be accomplished with a distance Zof 5 to 15 µm and displacement of ±3 µm or less, an optical coupling efficiency of 50~95 % (optical coupling loss
of 0.2~3.0 dB) can be obtained. With the VCSEL it is possible to obtain a high optical coupling efficiency without
using a lens.
Next let us look at Figure 5, which shows the second orreflection-type optical coupling model, in which a singlemode fiber is polished at a 45° angle and a mirror surface
is formed by deposition of gold or a dielectric multilayer
filter, and VCSEL light is emitted directly from the side of
the optical fiber without using a lens, achieving optical
coupling between the mirror and the optical fiber core.

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1.3-µm Range Vertical-Cavity Surface-Emitting Laser (VCSEL) Module�� ������

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Reflection-type optical coupling model.

This model can also be applied in converting a cylindrical optical fiber into a planar waveguide. By adopting
a module structure in which a VCSEL and optical fiber(waveguide) are mounted in a planar configuration we
obtain the advantage of easier assembly than for the butt
joint model.

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Simulation of reflection-type optical coupling model.

Figure 6 shows the result of simulation of the reflectiontype optical coupling model, conducted, in the same
way as for the butt-joint model, with a VCSEL MFD of 7.5µm, fiber MFD of 9.0 µm and with a plastic encapsulating material with a refractive index of 1.41 between the
VCSEL and the fiber. In assembling the module, if it ispossible to achieve, for example, a distance Z between
the light emitting surface of the VCSEL and the center ofthe fiber core of 67.5~77.5 µm (i.e., a distance from theoutside of the fiber clad to the center of the core of 62.5
µm, to which is added the 5~15 µm from the light emitting surface of the VCSEL to the outer diameter of thefiber clad) and a positional displacement of ±3 µm or lessin the XY plane between the VCSEL and the fiber, it will bepossible to obtain an optical coupling efficiency of 48~74% (optical loss of 1.3~3.2 dB). Thus the reflection-type
optical coupling model also offers the promise that highoptical coupling efficiency can be obtained without theuse of a lens.
Figure 7 shows the results of a simulation of MFD
dependence of coupling loss in a VCSEL for the reflection-type optical coupling model discussed above, conducted when the distance Z between the light emitting

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Simulation of MFD dependence of coupling loss in
VCSEL.

surface of the VCSEL and the center of the fiber core was
72.5 µm (distance from the light emitting surface of the
VCSEL to the outer diameter of the fiber clad of 10 µm).
It is possible to improve the optical coupling efficiency
by bringing the MFD of the VCSEL closer to that of thefiber (~9.0 µm) and by reducing the amount of positional
displacement. For example if an optical module using a
VCSEL with an MFD of 8.0 µm could be assembled witha positional displacement of ±2 µm, it would be possible
to achieve an optical coupling efficiency of 62 % (optical
coupling loss of 2.1 dB).
Thus it will be seen that by achieving a VCSEL MFD ofabout 8 µm or more, it will be possible to get a distanceto the optical fiber of about 10 µm or less and a positional
displacement of about ±3 µm, using either the butt-joint
or the reflection-type model, thereby obtaining an optical
coupling efficiency as good as or better than that of conventional edge-emitting laser modules without the use ofa lens.
In terms of the reflection-type model, the distance fromthe VCSEL to the fiber core must take account of the
thickness of the clad, and the optical coupling efficiency
will decrease accordingly. If, however, it is possible toreduce clad thickness without changing the MFD, or to
adopt a simplified assembly with a module structure inwhich the VCSEL and the optical fiber (waveguide) aresurface mounted, paying attention to the reflection-type
optical module will hold great significance.
3.2 Designing VCSEL Characteristics
Now let us proceed to a discussion of the characteristics
required of the VCSEL chip. Assuming that a module
could be assembled with a VCSEL-to-fiber optical coupling efficiency of 60 % (optical loss of 2.2 dB), it would,
in order to satisfy the target specifications of the OC-48/
STM-16 communications standard (2.5-Gbps, 15-km
transmission), be necessary, as shown, for example in thesimulation of L-I characteristics in Figure 8 with VCSEL
chip threshold current of 3 mA and slope efficiency of 0.2
W/A, to achieve a single-mode laser output power of 1.4mW at a bias current of 10 mA.

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1.3-µm Range Vertical-Cavity Surface-Emitting Laser (VCSEL) Module

If then, with a module bias current of 7 mA, modulation
is applied so that current amplitude reaches 5.9 mAp-p, theextinction ratio of the optical module would be 8.2 dB and
its average optical output power would be 0.48 mW (-3.2
dB), sufficient to satisfy OC-48/STM-16 (2.5-Gbps, 15-km
transmission).
The VCSEL chip has been designed and fabricated tosatisfy these requirements.
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Simulation of L-I characteristic.

3.3 Module Design
Based on the above considerations we worked out anddesigned a module structure. In order to reach the development targets set forth above, we adopted a structurewith a distance from the light-emitting surface of the
VCSEL to the optical fiber of approximately 10±5µm anda positional displacement of approximately ±2µm, andcould be assembled without alignment. As for the optical

coupling of the VCSEL and fiber, we selected a reflectiontype coupling model with a surface mounting module
structure in which the components could be stacked one
on top of the other like building blocks.
A molded plastic package was chosen for its ease ofmass production and cost advantage. In order to reducethe distance from the light-emitting surface of the VCSEL
to core of the optical fiber, we adopted a fiber with anouter diameter of 80 µm (40 µm from the outside of theclad to the center of the core), and an MFD of 9.0 µm.
The part on which VCSEL light impinges was polishedto form a mirror inclined at 45°, which was mounted onmolded plastic with high-precision molded projections.
As shown the structure is such that the end face of the
optical fiber appears on the VCSEL side.
The VCSEL is high-precision mounted on a silicon
optical bench (SiOB). The positional alignment between
the VCSEL and the fiber was accomplished by two railshaped V-grooves formed in the SiOB and a two railshaped auto-alignment projections high-precision moldedon the optical fiber side, making possible assembly without alignment 5), 6).
The distance from the VCSEL light-emitting surface
to the optical fiber depends primarily on variations in
VCSEL chip thickness, and the amount of positional displacement depends primarily on precision of mounting
between the VCSEL and the SiOB. We adopted a module
structure that could be fabricated so that these values
were ±5 µm and ±2 µm respectively. No lens or isolator
was used.
Assembly is easy, by means of surface stacking ofa molded lower plastic package with insertion molded
lead frame circuitry, monitor photodiode (MPD), SiOB on
which is mounted the VCSEL, and high-precision molded
upper plastic package with integral fiber.
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1.3-µm Range Vertical-Cavity Surface-Emitting Laser (VCSEL) Module

coupling efficiency of the module achieved the target
value of above 60 %. It was found that in multi-mode lasing the coupling efficiency was lower than that of a singlemode fiber.

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Figure 10 LC mini-TOSA VCSEL module prototype.

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Figure 12 Lasing spectrum at If = 6 mA.

PROTOTYPE FABRICATION AND
EVALUATION

Based on the basic studies and module design work
described above, we proceeded to prototype fabrication.
As Figure 10 shows, the prototype comprises an LC shellenabling LC connection, a connection sleeve for holding the ferrule, and the VCSEL core module designed as
described above. The module is of the extremely compact mini-TOSA size, measuring 4 mm in diameter by 12mm in length (not including the leads). Instead of the LC
shell, an MU shell may also be used, enabling MU connection.
Let us now turn to the results of evaluation. Figure 11
shows the L-I characteristics and optical coupling efficiency of the VCSEL module at room temperature.
������ ����Figure 12 shows the lasing spectrum at room temperature and a current If of 6 mA. Excellent single-mode lasing was obtained—center wavelength 1246 nm and sidemode suppressed ratio (SMSR) of 45 dB or better.
Figure 13 shows the eye diagram for a transmission
rate of 2.5 Gbps. At a bias current of 5 mA a satisfactory
pattern was obtained, with an average output power of-3.7 dBm and an extinction ratio of 8.2 dB����� ����
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VCSEL module.

The VCSEL chip used had an MFD of 8 µm and a center wavelength of 1246 nm. The prototype module had athreshold current of 2.5 mA, and a single-mode maximum
optical output power of 0.51 mW at 6.9 mA. The optical�� ������ ������� �������� ��

Figure 13 2.5-Gbps eye diagram (mask margins 1.9%).

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1.3-µm Range Vertical-Cavity Surface-Emitting Laser (VCSEL) Module

REFERENCES������ ���� �� ����� �� ��

1) Shimizu et al.: Furukawa Review, 19 (2000) 149.
2) Shimizu et al.: Furukawa Review, 22 (2002) 1.
3) Takagi et al.: Furukawa Review, 23 (2003) 1.
4) Nasu et al.: Furukawa Review, 23 (2003) 6.
5) M.Iwase, et al.: OECC'2002, 10C1-1 (2002) 134.
6) M.Iwase, et al.: IEEE, Transactions on advanced packaging, 24, 4(2001) 419.

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Figure 14 BER at 2.5 Gbps.

Figure 14 shows an evaluation of the bit error rate
(BER) at 2.5 Gbps, extinction ratio of 9.5 dB and average
output power of -4.1 dBm. Transmission was carried out
with back-to-back connection, as well as at a distance of
20 km.
Even in 20-km transmission, characteristics equaled
those in back-to-back connection. Excellent transmission
results were obtained, with a dispersion power penalty for
20-km transmission of 0.1 dB or less and a minimum sensitivity (at BER = 10-12) of -29 dBm.
By these means it was confirmed that the requirementsof OC-48/STM-16 (S16.1) for 2.5 Gbps, the communications standard which we targeted, were satisfied despite
the fact that the wavelength was slightly shorter, with anaverage output power of -5.0 dBm≤ Pf ≤0 dBm and atransmission distance of 15 km.

5.

CONCLUSION

A prototype mini-TOSA module has been fabricated without the use of lens or isolator using passive alignment
optical coupling technology based on a high-precision
plastic molding. The optical coupling efficiency achieved
between the VCSEL and a single-mode fiber was above
60 %. Further, 20-km transmission was achieved at optical output of -4.1 dBm, 2.5 Gbps in room temperature
operation.
With future improvements in VCSEL chip characteristics, we intend to proceed with increasing single-mode
lasing output power at temperatures as high as 85°C as
well as realizing long-wavelength operation at 1260 nm or
longer, and to confirm reliability.

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