1.3 µm Laser Array on p-type Substrate
Using Selective Oxidation of AlInAs
by Norihiro Iwai *, Toshikazu Mukaihara *, Nobumitsu Yamanaka *, Mitsumasa Ito *,Satoshi Arakawa *, Hitoshi Shimizu *2 and Akihiko Kasukawa *1.3 µm Al-oxide confined inner stripe (ACIS) lasers and laser arrays on a p-InP
substrate using the AlInAs-oxide layer have been demonstrated for low-cost parallel data transmission. First, we investigated the oxidation rate of the AlXIn1-XAs layer grown onInP substrate. The optimum conditions were found to be oxidation temperature = 500°C, layer
thickness = 100 nm, and Al-contents = 0.48 (lattice-match) taking oxidation rate and surface morphology into account. The 50nm-thick Al0.48In0.52As-oxide layer provides good current blocking forlaser applications. Based on the above investigations, an ACIS laser fabricated on a p-InP substrate shows a low threshold current of 4.0 mA and a high slope efficiency of 0.6 W/A. We havealso confirmed high reliability for an operating time of over 10,000 hours at 85°C, 5 mW. A 22channel laser array consisting of an ACIS structure has an average threshold current of 3.98 mA
and a standard deviation of 0.42 mA. These results indicate that ACIS lasers or laser arrays arepromising candidates for low-cost optical data links.

ABSTRACT1.

INTRODUCTION

It is preferable to fabricate the laser array on a p-type substrate from the viewpoint of high-frequency operation,
because an Si-integrated circuit composed of an npn-typetransistor has superior high-speed performance. So far,
low threshold buried heterostructure (BH) lasers on a pInP substrate have been investigated intensively for array
application, since low threshold operation is needed toreduce power consumption and system skew, and to simplify the driving circuits 1). Critical fabrication processes,
such as narrow stripe width etching at 1.5 µm and a multiple growth step, are required for BH lasers, which might
result in a poor yield for an array containing many devices.
Conversely, a ridge waveguide (RWG) laser seems to bevery attractive for laser array applications because of its
simple structure. Recently, we have demonstrated thehigh performance of 1.3 µm Al-oxide confined inner stripe(ACIS) lasers using a strain compensated AlAs/InP/AlInAs
super-lattice structure 2)-3). A current confining layer should
be inserted into the p-cladding layer for a low thresholdcurrent to prevent current spreading in the cladding layer,since the electrical resistivity of n-type InP is two orders ofmagnitude lower than that of p-type InP for the same carrier concentration. In this case, the current confinement
layer should be located below the active layer. However,achieving an epitaxial growth of highly strained AlAs on
InP is very difficult because of the large mismatch of* WA Team, Yokohama R&D Lab.
*2 Semiconductor R&D Center, Yokohama R&D Lab.

3.5%, even if a strain compensation technique is applied.
Therefore, an AlInAs layer lattice-matched InP substrate isused for selective oxidation 4)-6).
In this paper we report, for the first time, on the ACIS
laser and laser array on a p-InP substrate with an AlInAsoxide confined structure.

2.

OXIDATION OF AlXIn1-XAs LAYERFirst, we describe the optimization of the oxidation
process and conditions of AlInAs layers. In the case of theAlXGa1-XAs layer on a GaAs substrate, a decrease of theoxidation rate was observed with a decrease of the Alcontents (X) 7). The AlInAs layer has a low Al content of48%. Therefore, we are afraid that the oxidation rate
decreases further for the AlInAs layer.
To investigate the dependence of the oxidation rate onlayer thickness and Al composition, we have prepared thesample shown in Figure 1. This structure was grown bylow-pressure metalorganic chemical vapor deposition (LPMOCVD) at a growth temperature of 600°C.
Trimethylindium (TMIn), triethylgallium (TEGa), andtrimethylaluminum (TMAl) were used for group III, andphosphine (PH3) and arsine (AsH3) were used for group
V.
The sample has three AlXIn1-XAs layers consisting of 50nm (X = 0.48 and 0.7) and 100 nm (X = 0.48) thick separated by 200nm-thick InP layers. To prepare the samples
for selective oxidation, 20 µm-wide ridges were formed by
wet chemical etching using SiNx as an etching mask to1

expose the AlXIn1-XAs layers at the ridge sidewalls for lateral oxidation. Oxidation was carried out in a horizontal
quartz tube in a furnace fed with nitrogen gas passed
through a deionized water bubbler maintained at 80°C.
The flow rate of nitrogen gas was 3 l/min. We used a furnace with three-zone heater in this study, which enabled
us to realize high temperature uniformity within ±1°C. The
oxidation temperature (T a ) was varied from 450°C to520°C. After oxidation, the oxidized width and the surface
morphology were observed by scanning electron microscope (SEM) and optical microscope, respectively.
Figure 2 shows the oxidized width versus square root ofoxidation time (t1/2) as a parameter of the Al0.48In0.52As
layer thickness at an oxidation temperature (Ta) of 500°C.
The oxidation rate is the best fit for a square root function,
which is in agreement with published work on the oxidation of AlXIn1-XAs layer 6). The oxidation rate of 50nm-thicklayer and 100nm-thick layer are 0.19 µm/min1/2 and 0.5µm/min1/2, respectively. It is clearly found that an oxidation

rate of 100nm-thick layer is faster than that of the 50nmthick layer, as is reported for selective oxidation of AlAslayer 7).
Figure 3 shows the oxidized width versus square root ofoxidation time (t1/2) as a function of the Al-contents at anoxidation temperature (Ta) of 500°C. No difference in theoxidation rate of 0.19 µm/min1/2 was observed for both Alcontent of 0.48 (lattice-match) and 0.7 (1.5% tensilestrain). It is found that the oxidation rate are not dependent on Al-contents of 0.48 to 0.7.
A low temperature process would be preferred for
device application to prevent deterioration of device characteristics due to unexpected diffusion of a doping material such as Zn. The temperature dependence of oxidation
rate on layer thickness (d = 50 nm, 100 nm) is anotherimportant factor investigated. The oxidation rate sharply
increased with the temperature as shown in Figure 4,
however, the surface morphology tended to become hazy
due to the desorption of phosphorous at a higher tempera-

Figure 1

Schematic diagram of the AlXIn1-XAs layers preparedin this experiment

Figure 3

Oxidized width versus oxidation time as a function of
Al content

Figure 2

Oxidized width versus oxidation time as a function of
the Al0.48In0.52As layer thickness

Figure 4

Temperature dependence of oxidation rate on layerthickness

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Furukawa Review, No. 202001

Figure 6
Figure 5

Current-voltage (I-V) characteristics of the oxidized
Al0.48In0.52As layer

ture (> 520°C).
Current blocking characteristics are very important for
laser applications. The room temperature current-voltage(I-V) characteristics of the oxidized Al0.48In0.52As layer are
shown in Figure 5 for a 3 x 300 µm device with a completely AlInAs-oxide layer. The 50nm-thick Al0.48In0.52As
oxidized layer provides good insulation below a bias voltage of 5 V. The leakage current at an applied voltage of 2
V was as low as 0.12 µA, which corresponds to a resistance of 20 MΩ. It was found that the AlInAs-oxide layer
provides sufficient current blocking for laser application.
All the samples with d = 50 nm and 100 nm oxidized at
different oxidation temperatures have similar I-V characteristics.
From the above investigations on the oxidation rate, thesurface morphology, and the current blocking characteristics, the optimum conditions were found to be oxidation
temperature of 500°C, layer thickness of 100 nm, and Al
content of 0.48 (lattice-match).

3.

Schematic diagram of the 1.3 µm ACIS laser on p-InP
substrate

ACIS LASERS ON p-TYPE InP SUBSTRATE

As discussed in previous sections, we described the optimum conditions of the oxidation of the AlInAs layer for
laser applications. We applied this oxidation technique ofAlInAs layer to a ridge waveguide (RWG) laser structure.
In this section, we present high-performance Al-oxide confined inner stripe (ACIS) lasers 8).
Figure 6 shows a schematic view of fabricated ACISlaser. Laterally, both optical and current confinements canbe realized by the low index, and insulating AlInAs-oxidized layer. The active layer consisted of 1% compressively strained GaInAsP triple-quantum wells (5.5 nm thickeach) separated by selectively n-doped (1 x 1018 cm-3)
GaInAsP barriers with a band gap wavelength of 1.1 µm

Figure 7

Cross-sectional SEM image after oxidation(10 nm thick each). Graded-index separate confinement
heterostructure (GRIN-SCH) layers, of decreasing
bandgap wavelengths of 1.1, 1.05, and 1.0 µm with alayer thickness of 30 nm, are used for the optical confinement layer. The thickness of the AlInAs layer is 100 nm.
The distance between the active layer and the oxidizedlayers is set at 200 nm, which is decided by considering
induced stress and other factors. All the layers are grownby LP-MOCVD on a p-InP substrate at a growth temperature of 600°C.
The ridge stripe width of 10 µm, for exposing the edgeof the AlInAs layer for oxidation, is formed by reactive ion
beam etching (RIBE) using SiN x as an etching mask.
Oxidation is performed at 500°C in nitrogen gas that isbubbled through water at 80°C. Figure 7 shows the crosssectional SEM view of the oxidized AlInAs layers. Theoxide opening (= current aperture) defined is about 5.0 µmafter 90 min of oxidation.
After oxidation, the sample is processed into a conventional ridge waveguide structure. It should be noted thatthe fabrication process is quite easy, since the initial ridge
width is as wide as 10 µm.
The pulsed and CW light output power versus injection
current (L/I) characteristics are shown in Figure 8 for a400 µm long ACIS laser at 25°C. The ACIS laser wascoated with a high reflective (HR) coating on a back facet(R f /R b = 30% / 96%). A low threshold current of 12.9 mA
and a high slope efficiency of 0.6 W/A were obtained.
Moreover, light output power of 100 and 90 mW wereobtained at pulsed and CW operations, respectively.
We designed the cavity structure so that a low threshold3

Figure 10 Aging characteristics of the ACIS lasers
L/I characteristics of an ACIS laser

Output Power (mW)

Figure 8Figure 11 Pulsed L/I characteristics of the consecutive 22channel ACIS laser array

Figure 9

Temperature dependence of L/I characteristics of anACIS laser

current can be obtained with the combination of a shortcavity of 200 µm and HR coatings on both facets (R f /R b =88% / 96%). The temperature dependence of the L/I
characteristics is shown in Figure 9. A low threshold current of 4.0 mA at 20°C, which corresponds to a thresholdcurrent density as low as 420 A/cm2, was obtained. Alower threshold current can be expected for a device witha narrower current aperture. The characteristic temperature was measured to be 67 K in the temperature range
20 to 70°C.
Both low threshold current and high power operation
indicate that the Al-oxide layer using the AlInAs layer provides good current confinement.
The aging test at 85°C, 5 mW are shown in Figure 10for the Cleave / HR ACIS lasers in the automatic power
control (APC) mode. No appreciable change in driving
currents was observed after 10,000 hours. The increasingrate of driving current was about 1%/khr, and it tends to4saturate. We can expect more than 106 hours by extrapolating this curve if the end of life is defined as a 20%
increase of the driving current.

4.

ACIS LASER ARRAY

The pulsed L/I characteristics of the consecutive 22channel laser array 9) are shown in Figure 11. The averageof the threshold currents was 3.98 mA and the standard
deviation was 0.42 mA. This standard deviation is 10% of
the threshold current, which is comparable to conventional
BH lasers. This preliminary result indicates that an ACIS
laser is one of the promising candidates for a laser arrayon a p-InP substrate due to its simple structure.

5.

CONCLUSION

In conclusion, we investigated the selective oxidation ofAlXIn1-XAs layers grown on p-InP for the laser array applications. It is experimentally found that the oxidation rateincreases with the layer thickness and the oxidation tem-Furukawa Review, No. 20

2001perature, and there is no difference in the Al contents inthe range of 0.48 to 0.7. The measured electrical propertyof 50nm-thick Al0.48In0.52As-oxide layer shows a good current blocking characteristic.
Based on the above results, we have fabricated a highperformance 1.3 µm ACIS laser and laser array, together
with promising aging characteristics for the first time. The
high-performance lasing characteristics obtained in thisstudy show the possibility of a low-cost, high-performance,long-wavelength laser for low-cost optical data links.

ACKNOWLEDGMENTS
The authors are grateful to Dr. Y. Suzuki and J. Kikawa for
their constant encouragement, Dr. N. Yokouchi, M.
Funabashi, K. Hiraiwa and H. Shimizu for valuable discussions, F. Iwase, T. Matsuda, Y. Murayama and K.
Yabusaki for SEM observations.

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Manuscript received on December 18, 2000.

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