ᚑくᄢቇℂᎿቇ⎇ⓥႎ๔
J. Fac. Sci. Tech., Seikei Univ.
Vol.47 No.2 (2010) pp.61-64
㧔․೎⎇ⓥ⾌ߦଥࠆ⺰ᢥ㧕ᄙᢙ୘ਗ೉ 㪤㪦㪪㪝㪜㪫 ࠍ↪޿ߚૐ᷷↪ૐ㔚࿶ᄢ㔚ᵹ⋥ᵹ㔚Ḯߩ⹜૞㩷ੑࡁች ᤩ*1, ⧎ፉ 㓶*2, ㋈ᧁ ቁᒾ*2
㩷

Cryogenic Low Voltage/ High Current DC Power Source using Low Loss Switching Device withMulti-Parallel Connected MOSFETs
㩷Akira NINOMIYA* , You HANASHIMA*2䋬Takahiko SUZUKI*21

㩷

ABSTRACT : In order to carry out direct-current (DC) magnetic excitation of the superconducting coil, it ispossible to make it reach to a rated value only on the voltage corresponding to the inductance value andcurrent increasing rate of a primarily coil. 㩷 However, DC power sources are usually under anordinary-temperature, in order to wire the load under low-temperature circumstances, the loss by heat
penetrate occurs, and a voltage is needed for a power supply. Moreover, since the output parts of the power
supply consist of semiconductor devices and circuit elements, it cannot disregard the voltage drop from here,
either.㩷 By these contributing factors, a certain amount of voltage value is needed for the DC power sourcefor superconducting coils.
Then, we make the heat reduction by setting up under a low-temperature circumstances for a power source,
and are examining the DC power source for superconducting coils considered only as the semi-conductor
switch with which the component part also made the on-resistance value small as much as possible. A goal ismaking it increase to the current capacity made to carry out the quench of the superconducting coil by aundervoltage of 1 voltage or less. Until now, we were not able to attain the performance of the infancy under
the impact of a loss of a switch part and a periphery circuitry part. This time, it became a possible to be able toimprove that performance sharply and to attain the aim of an infancy by improving this point completely.
Keywords : low volatge and high current DC power supply, MOSFET, high turn ratio power transformer(Received September 22, 2010)㩷 㩷㩷㪈䋮 䈲䈛䉄䈮㩷᷷߆ࠄߩଚ౉ᾲࠍૐᷫߐߖ㧘ߘߩ᭴ᚑㇱಽߣߥࠆඨዉ૕㩷ㇱ߆ࠄߩ៊ᄬ߽ᭂജૐᷫߐߖߚ⿥વዉࠦࠗ࡞↪⋥ᵹ㔚Ḯ ⿥વዉࠦࠗ࡞ࠍ⋥ᵹബ⏛ߔࠆߦߪ㧘ᧄ᧪ࠦࠗ࡞ߩࠗࡦࠍᬌ⸛ߒߡ޿ࠆ[1]‫⋡ޕ‬ᮡߪ㧘㧝Vએਅߩૐ㔚࿶ߢ⿥㔚ዉ࠳ࠢ࠲ࡦࠬ୯ߣ㔚ᵹ਄᣹₸ߦ⷗ว߁㔚࿶ߩߺߢቯᩰ୯߹ࠦࠗ࡞ࠍࠢࠛࡦ࠴ߐߖࠄࠇࠆ㔚ᵹኈ㊂߹ߢჇടߐߖࠆߎߢ೔㆐ߐߖࠆߎߣ߇น⢻ߢ޽ࠆ‫ߒ߆ߒޕ‬㧘⋥ᵹ㔚Ḯߪㅢߣߢ޽ࠆ‫ߪߢ߹ࠇߎޕ‬㧘ࠬࠗ࠶࠴ㇱಽߣ๟ㄝ࿁〝ㇱಽ߆ᏱᏱ᷷ߦ⟎߆ࠇ㧘ߘߎ߆ࠄૐ᷷⽶⩄ߦዉ✢ߢ㔚ജࠍଏ⛎

ࠄߩ៊ᄬ߇ᄢ߈ߊᓇ㗀ߒߡ޿ߡ⋡ᮡߣߒߚᕈ⢻ࠍ㆐ᚑߔߒߡ޿ࠆ‫߼ߚߩߘޕ‬㧘ዉ૕ࠍ੺ߒߚᾲଚ౉߇⊒↢ߔࠆ‫ޕ‬ࠆߎߣ߇ߢ߈ߥ߆ߞߚ‫੹ޕ‬࿁㧘ᧄឭ᩺㔚Ḯߦߟ޿ߡో㕙㔚ᵹኈ㊂߇ᄢ߈ߊߥࠆߣߎߩ៊ᄬߪήⷞߢ߈ߥߊߥࠆ‫ޕ‬⊛ߦ⷗⋥ߒ㧘ᄢ᏷ߦߘߩᕈ⢻ࠍᡷༀߔࠆߎߣ߇ߢ߈ߚ‫ޕ‬߹ߚ㧘㔚Ḯߩ಴ജㇱಽߪ㧘ඨዉ૕⚛ሶߣ࿁〝ㇱຠߢ᭴ᚑ㩷ߐࠇߡ޿ࠆߚ߼ߦ㧘ߎߎ߆ࠄ߽㔚࿶㒠ਅ߇⊒↢ߔࠆ‫ߎޕ‬䋲䋮㔚Ḯ࿁〝㩷ࠇࠄ߇ⷐ࿃ߣߥߞߡ㧘⿥વዉࠦࠗ࡞↪⋥ᵹ㔚Ḯ㩷ᧄឭ᩺㔚Ḯߪ㧘ᏎᢙᲧߩᄢ߈ߊ⇣ߥࠆᄌ࿶ེ㧔200㧦1㧕ߣ޿߃ߤ߽㧘޽ࠆ⒟ᐲߩ㔚࿶୯߇ᔅⷐߦߥߞߡ޿ࠆ‫ޕ‬1ߘߎߢ㧘ᚒ‫ߪޘ‬㧘㔚Ḯㇱಽࠍૐ᷷ⅣႺਅߦ߅޿ߡ㧘Ᏹߣᄙᢙߩ MOSFET ࠍਗ೉ធ⛯ߒߚࠬࠗ࠶࠴࿁〝ㇱಽ߆ࠄᚑࠆ‫ޕ‬ᄌ࿶ེߩ㧝ᰴ஥ߪዉ✢ࠍ↪޿ߡ 1000 ࿁Ꮞ߈㧘2*1:ࠛ࡟ࠢ࠻ࡠࡔࠞ࠾ࠢࠬቇ⑼ഥᢎ
*2:ࠛ࡟ࠢ࠻ࡠࡔࠞ࠾ࠢࠬቇ⑼ቇ↢ᰴ஥ߪ Bi ♽⿥વዉ࠹࡯ࡊ✢ࠍ 5 ࿁Ꮞ޿ߡ޽ࠆ‫ࠃߦࠇߎޕ‬ࠅ㧘Ᏹ᷷߆ࠄૐ᷷ߦᒁ߈ㄟ߻ㇱಽߩ㔚ᵹߪ 200 ಽߩ㧝ߦ㧙㧙ૐᷫߢ߈ࠆ‫ߚ߹ޕ‬㧘ߎߩᄌ࿶ེㇱಽߦߪ 3 ᰴࠦࠗ࡞߽޽

࿑ 2 ߪ㧘ࠬࠗ࠶࠴ㇱಽߢ޽ࠆ‫ߪࠇߎޕ‬Ᏹ᷷ᤨߩቯᩰ㔚ࠆ‫ߩߎޕ‬ㇱಽߪ㧘ࡄ࡞ࠬାภࠍ↢ᚑߒߡ MOSFET ࠍ೙ᓮᵹ߇ 5A ߩࡄࡢ࡯MOSFET㧔᧲⦼⵾ 2SK2493㧕ࠍ 100 ୘ߔࠆㇱಽߢ޽ࠆ‫ޕ‬࿑ 1 ߇૞ᚑߒߚᄌ࿶ེߢ޽ࠅ㧘⴫ 1 ߇ਗ೉ធ⛯ߒߡ⵾૞ߒߚ߽ߩߢ޽ࠆ‫ޕ‬ᵈᗧߒߚὐߪ㧘100ߘߩ⻉⸒ߢ޽ࠆ‫ޕ‬୘ߔߴߡߦห৻㔚ᵹ୯߇ᵹࠇࠆࠃ߁ߦဋᵹൻኻ╷ࠍᣉߒߚߎߣߢ޽ࠆ‫ߪࠇߎޕ‬㧘ၮ᧼਄ߩ࿁〝ㇱಽߩ᏷ࠍဋ৻ߦߒ㧘ోߡߩ⚛ሶ߇ห৻࿁〝㐳ߦߥࠆࠃ߁ߦߒߡⴕߞߚ‫ޕ‬㧝ᰴᏎ✢
3 ᰴ೙ᓮㇱ

㧞ᰴᏎ✢㧟ᰴᏎ✢ ࿑㧝㧚ૐᾲଚ౉ဳᄌ࿶ེ
1 ᰴᏱ᷷ㇱ



2 ᰴૐ᷷ㇱ㧔77K㧕࿑㧟㧚⿥વዉࠦࠗ࡞ബ⏛࿁〝㧚ߎߎߢ‫ ޔ‬ᰴᏎ✢ߪᏱ᷷‫ ޔ‬ᰴᏎ✢ߪ -‫ ޔ‬ᰴᏎ✢ߪ /15('6 ೙ᓮㇱߢ  ୘ߩ /15('4 ߦࡄ࡞ࠬାภࠍଏ⛎㧚⴫㧝㧚ᄌ࿶ེ⻉⸒    ࿑㧠㧚/15('6 න૕㕒․ᕈ -  ߒ߆ߒ㧘ߎߩ߹߹ߢߪ࿁〝ㇱಽߦ૶↪ߒߡ޿ࠆ㌃⵾ߩၮ᧼㐳ߦ⋧ᒰߔࠆᛶ᛫ᚑಽ߇ሽ࿷ߒߡߒ߹߁‫ߢߎߘޕ‬㧘ߎߩ㈩✢ㇱಽߦ Bi ♽ߩ㉄ൻ‛⿥વዉ࠹࡯ࡊ✢㧔Ic:150A㧬૑෹㔚Ꮏ⵾㧕ࠍਗ೉ធ⛯ߒߡ㧘✢〝㐳ߩᛶ᛫ᚑಽ߽࠯    ࡠߦߔࠆࠃ߁ߦᡷ⦟ߒߚ‫੹ޕ‬࿁ߪ㧘200A ߹ߢࠍ⠨ᘦߒߚC ⴫஥

ߚ߼ᦨᄢ 2 ᧄਗ೉ធ⛯ߒߡ޽ࠆ‫ޕ‬ ࿑ 3 ߪᧄឭ᩺࿁〝ߩၮᧄ࿁〝ߢ޽ࠆ‫ߡ޿↪ࠍࠇߎޕ‬ၮᧄേ૞ࠍ⺑᣿ߔࠆ‫౉ޕ‬ജߪᏱ᷷ㇱߢ޽ࠅ㧘Ꮞ߈ᢙᲧ 200ኻ㧝ߩᄌ࿶ེࠍ੺ߒߡ 77K ⅣႺߣߥࠆ‫ߩߎޕ‬ૐ᷷ⅣႺㇱߦߪ⽶⩄ߩ⿥વዉࠦࠗ࡞ߣ MOSFET ߇ 100 ୘ਗ೉ធ⛯ߐࠇߡ޿ࠆ‫ޕ‬MOSFET ࠍ೙ᓮߔࠆߚ߼ߩㇱಽߪᄌ࿶ེ 3 ᰴ          D 㧚ⵣ஥Ꮞ✢ߢ޽ࠅ㧘ߎߎߦ޽ࠆ࠷ࠚ࠽࡯࠳ࠗࠝ࡯࠼㧔RD8A㧕

࿑㧞㧚/15('6 ࠬࠗ࠶࠴࿁〝ㇱಽ㧔/15('6 ୘૶↪㧕/15('6᧲⦼⵾ 5-㧔࠼࡟ࠗࡦ㔚ᵹ㧔+F㧕#ࠥ࡯࠻㔚࿶㧔8)5㧕8‫ࠬ࡯࠰࡯ࡦࠗ࡟࠼ޔ‬㑆㔚࿶㧔8&5㧕8‫ޔ‬ၮ᧼਄ߦߪ $K ♽㉄ൻ‛⿥㔚ዉ࠹࡯ࡊ✢ ⥃⇇㔚ᵹ # ࠍᦨᄢ㧞ᧄਗ೉ធ⛯㧚ߢ㔚Ḯߦหᦼߒߚᣇᒻᵄ㧔8V㧕ࠍ↢ᚑߒߡ޿ࠆ‫ࠍࠇߎޕ‬MOSFET ߩࠥ࡯࠻ߦଏ⛎ߔࠆߎߣߢࠝࡦࠝࡈ೙ᓮࠍⴕ
ߞߡ⿥વዉࠦࠗ࡞ߦ৻ᣇะߩ㔚ᵹࠍଏ⛎ߒߡ޿ࠆ‫ߎߎޕ‬ߢᵈᗧߒߚ޿ߎߣߪ㧘MOSFET ߦขࠅઃߌࠄࠇߡ޿ࠆ࠳ࠗࠝ࡯࠼ߢ޽ࠆ‫ߩ࠼࡯ࠝࠗ࠳ߩߎޕ‬㕒․ᕈࠍ࿑㧠ߦ␜ߔ‫ޕ‬ߎࠇࠃࠅㅒᣇะߪ 77K ߢߪ㧝V ߢዉㅢ⁁ᘒߦߥࠆߎߣߢ޽ࠆ㧔Ᏹ᷷ᤨߪ㧘0.6V ⒟ᐲ㧕‫ޕ‬㧙㧙ᧄ࿁〝ߪߎߩὐࠍ⠨ᘦߒߡ߅ࠅ㧘⿥વዉࠦࠗ࡞ࠍ⋥ᵹㄟߺ㧘⿥વዉࠦࠗ࡞ߩബ⏛ታ㛎ࠍታᣉߒߚ‫߅ߥޕ‬㧘ߎߩബ⏛ߔࠆ㓙㧘ߎߩ MOFET ߦਗ೉ធ⛯ߐࠇߡ޿ࠆ࠳ࠗࠝ࿁〝ߦߪ㧘ᣂߚߦࠬࠗ࠶࠴ 1 ߣ 2 ߇ㅊടߐࠇߡ޿ࠆ‫ߎޕ‬࡯࠼߇േ૞ߒߥ޿㔚࿶▸࿐ߢߩߺᢛᵹ࿁〝߇ታ⃻ߢ߈㧘ࠇߪ㧘ࠢࠛࡦ࠴ᤨ㧘㔚Ḯߩ 1 ᰴ஥ࠍಾࠅ㔌ߔߣหᤨߦ㧘หᤨߦల㔚߇น⢻ߣߥࠆ‫ߜࠊߥߔޕ‬㧘ߎߎߦ㧝V એ਄ߩࠬࠗ࠶࠴࿁〝ㇱಽߦ߽ࡄ࡞ࠬାภࠍਈ߃ߥ޿⁁ᘒࠍߟߊ㔚࿶߇ടࠊࠆߣ㧘࠳ࠗࠝ࡯࠼ࠍ੺ߒߡ MOSFET ߇ㅒᣇะࠅ㧘⽶⩄ߩߺߩ㔚ᵹᷫ⴮࿁〝ࠍ᭴ᚑߔࠆߚ߼ߢ޽ࠆ‫ߎޕ‬ߩ⍴⛊ߒߚ࿁〝ߣߥࠅ⿥વዉࠦࠗ࡞ߪബ⏛ߢ߈ߥߊߥࠆ‫ޕ‬น⢻ߣߥࠆ‫⿥↪૶ޕ‬㔚ዉࠦࠗ࡞ߪ㧘ౝᓘ 118mm 㧘ᄖᓘߦ߽ዉㅢߔࠆߎߣߦߥࠅ㧘2 ᰴ࿁〝ㇱಽ߇ MOSFET ߩߺ߹ߚߎߩ࿑㧠ߩ㗅ᣇะ․ᕈࠍ⷗ࠆߣ㧘ࠥ࡯࠻࡮࠰࡯ࠬࠇߦࠃࠅ㧘࿁〝ౝߦ⊒↢ߒߚᛶ᛫ᚑಽࠍ᛽಴ߔࠆߎߣ߇
190mm㧘Ꮞᢙ 360 ࠲࡯ࡦ㧘ࠗࡦ࠳ࠢ࠲ࡦࠬ 24.9mH㧘ࠢ㑆㔚࿶㧔VDS㧕߇㜞ߊߥࠆߣࠝࡦᛶ᛫୯ࠍૐߊߥࠆߎߣࠛࡦ࠴㔚ᵹ 32A ߩ૑෹㔚Ꮏ⵾ߩࡆࠬࡑࠬ♽⿥㔚ዉࠦࠗ࡞߇ࠊ߆ࠆ‫ޕ‬ᚒ‫ߪޘ‬㧘ߎߩ୯ࠍ㧤V ߣߒߡታᣉߒߡ޿ࠆ‫ޕ‬ߢ޽ࠆ‫ࠍࠇߎޕ‬࿑㧤ߦ␜ߔ‫ޕ‬㧟㧚⹜㛎⚿ᨐ
㩷
࿑5ߪ㧘ᶧ૕⓸⚛ⅣႺਅߢታᣉߒߚHTS✢᧚᦭ήߦࠃࠆ
ࠬࠗ࠶࠴࿁〝ㇱಽߩࠝࡦᤨߩ㔚࿶㔚ᵹ․ᕈߢ޽ࠆ‫ߩߎޕ‬ߣ߈㧘MOSFETන૕ߩࠝࡦᛶ᛫୯ߩ৻଀㧔77K㧕ࠍ࿑㧢ߦ␜ߔ‫ࠅࠃࠇߎޕ‬㧘ߘߩ୯ߪ43mǡߢ޽ࠆ‫ޕ‬છᗧߦㆬᛯ
ߒߚ10୘ߩࠨࡦࡊ࡞ߩ⚿ᨐ㧘ࠝࡦᛶ᛫୯ߪ32㨪43mǡߩ▸࿐ߦಽᏓߒߚ‫ޕ‬ᓥߞߡ㧘100୘ਗ೉ធ⛯ߒߚߣ߈ߩ੍ᗐ        ࿑㧣㧚ల㔚ታ㛎࿁〝ࠝࡦᛶ᛫୯ߪ㧘ߎߩὐࠍ⠨ᘦߒߚ▸࿐ౝߦߥࠆߣ⠨߃ࠄࠇࠆ‫⚿ޕ‬ᨐߪ0.4mǡߢ޽ߞߚ‫ࠅࠃࠇߎޕ‬㧘HTS✢᧚ࠍਗ೉ធ⛯ߐߖࠆߎߣߢ੍ᗐㅢࠅߩૐᛶ᛫ࠬࠗ࠶࠴߇ታ⃻ߢ߈ࠆߎߣ߇್᣿ߒߚ‫߅ߥޕ‬㧘૞ᚑߒߚࠬࠗ࠶࠴࿁〝ߩ੤ᵹ․ᕈߪ㧝㨗Hz㧘60A߹ߢታᣉߒ໧㗴ߩή޿੐ࠍ⏕⹺ߒߡ޿ࠆ‫ޕ‬ᰴߦ㧘ߎߩࠬࠗ࠶࠴࿁〝ࠍ࿑ 7 ߦ␜ߔల㔚࿁〝ߦ⚵ߺ250࿑ 㧚㉄ൻ‛⿥વዉࠦࠗ࡞㧔⥃⇇㔚ᵹ #૑෹㔚Ꮏ⵾㧕

MOSFET with HTS tape(0.41mO)

200

MOSFET with no HTStape (1.38mO)

] 150
[AID
100
500㪇

VD[mV]

㪌㪇㪈㪇㪇㪈㪌㪇     ࿑ 㧚⿥વዉࠦࠗ࡞ബ⏛․ᕈ࿑ 㧚 ୘ਗ೉ធ⛯ /15('6 ߩ㕒․ᕈ㧔8)5㧤8㧕㪈㪇㪇㪩㪅㪫KŶͺZ͗ϲϵ͘ϭŵK䋨Z͘d͘ͿKŶͺZ䋺 ϰϯ͘ϮŵK;ϳϳ<Ϳ㪏㪇㪴 㪍㪇㪭㪲㫄㪎㪎㪢㪪 㪋㪇㪛㪭㪉㪇㪇㪇  㪇㪅㪌㪈㪈㪅㪌㪠㪛㪲㪘㪴    ࿑ 㧚ബ⏛ᤨߩ࿁〝ౝᛶ᛫୯․ᕈ࿑ 㧚/15('6 න૕ߩᏱ᷷ߣ - ߩ․ᕈᲧセ㧔8)58㧕㧙㧙࿑ 9 ߪ㧘ᄌ࿶ེ㧞ᰴ㔚࿶߇ 140mV㨪600mV㧔1 ᰴ㔚࿶㧠㧚⚿ ⺰ߪ 30V㨪130V ⋧ᒰ㧕ߩ▸࿐ߢⴕߞߚߣ߈ߩల㔚․ᕈߢ޽

ࠆ‫ߢߎߎޕ‬㧘2 ᰴ㔚࿶ 234mV㧔1 ᰴ㔚࿶ 50V㧕ߩߣ߈߇㧘 ㉄ൻ‛⿥વዉࠦࠗ࡞㔚Ḯࠍૐ៊ᄬߢታ⃻ߔࠆߚ߼ߦ੤
⋥ᄌ឵ㇱಽࠍ 77K ߩ᷷ᐲⅣႺਅߢേ૞ߐߖࠆቯ㔚࿶/ᄢ߶߷૶↪⿥㔚ዉࠦࠗ࡞ߩࠢࠛࡦ࠴㔚ᵹ୯ߦ⋧ᒰߔࠆ‫ߘޕ‬ߒߡ㧘㧞ᰴ㔚࿶߇ 550mV ߣ 600mV ߩ․ᕈߪ㧘৻ߟߩ․㔚ᵹဳߩల㔚࿁〝ߦߟ޿ߡᬌ⸛ߒߚ‫ᧄޕ‬ឭ᩺㔚Ḯߪ㧘Ꮞᕈߩࠃ߁ߦ⷗߃ߡ޿ࠆ‫ߪࠇߎޕ‬ਔ․ᕈ߇৻⥌ߒߡ޿ࠆߎ

߈ᢙߩᄢ߈ߊ⇣ߥࠆᄌ࿶ེߣ MOEFET ࠍᄙᢙ୘ਗ೉ធߣࠍ␜ߒߡ޿ࠆ‫ࠅࠃࠇߎޕ‬ਔ․ᕈߪ㧘ࠦࠗ࡞ౝߢ⊒↢ߒ⛯ߒߚߡࠬࠗ࠶࠴࿁〝ㇱಽ߆ࠄ᭴ᚑߐࠇࠆ‫ޕ‬ߚᛶ᛫୯߇߶߷ห৻ߢ޽ࠆߎߣ߇ផቯߢ߈ࠆ‫ߜࠊߥߔޕ‬㧘ߎࠇࠄࠍ↪޿ߡᓧࠄࠇߚ․ᕈࠍ߹ߣ߼ࠆߣએਅߣߥࠆ‫ޕ‬⿥વዉ߇⎕ࠇߡᏱવዉ߇ࠦࠗ࡞ౝߢ⊒↢ߒߚߣ߈㧘㔚࿶࡮ࠬࠗ࠶࠴࿁〝ㇱಽߩࠝࡦᛶ᛫୯ߪ㧘ᦼᓙߒߚ୯ߢ޽ࠆ‫ޕ‬߇ᐔⴧ⁁ᘒߦߥࠆߎߣߢଏ⛎㔚ജ߇ૐਅߒߡ޿ࠆߣ੍ᗐਗ೉୘ᢙಽߩ㧝ߦૐᷫߐߖࠆߎߣ߇น⢻ߣߥߞߚ‫ޕ‬ߢ߈ࠆ‫ߪࠇߎޕ‬㔚Ḯ߇ᒙ޿ߣ޿߁ߎߣߢ޽ࠆ߇㧘೎ߥ⷗

੹࿁ߪ 100 ୘૶↪ߒߚ߇㧘ߎߩ୘ᢙࠍߐࠄߦჇ߿ߔߣ㧘ᣇࠍߔࠆߣ⽶⩄ᕆᄌߦኻߒߡ㧘੐᡿ߩᛥ೙ߔࠆᯏ⢻㧔ࡈ㔚ᵹኈ㊂ߩჇᄢߣࠝࡦᛶ᛫୯ߩߐࠄߥࠆૐᷫൻ߇น⢻ߢࠚࠗ࡞࠮࡯ࡈᯏ⢻㧕ࠍ᦭ߔࠆ㔚Ḯߣߺࠆߎߣ߽น⢻ߢ޽޽ࠆ‫ޕ‬ࠆ‫ߪࠇߎޕ‬㧘ࠢࠛࡦ࠴߇᜛ᄢߒߡ⿥㔚ዉࠦࠗ࡞ߦ⥌๮⊛࡮ᧄឭ᩺㔚Ḯߦߪ㧘⿥વዉࠦࠗ࡞߇ㆊബ⏛ᤨ⁁ᘒߦߥࠅߥ࠳ࡔ࡯ࠫࠍਈ߃ࠆߎߣࠍᛥ೙ߔࠆᯏ⢻ߣ⠨߃ࠄࠇࠆ‫ޕ‬ࠢࠛࡦ࠴ߒߚߣߒߡ߽㧘Ᏹવዉ⁁ᘒ߇᜛ᄢߔࠆߎߣߩߥ

࿑ 10 ߪ㧘ߎߩߣ߈ߩ࿁〝ౝߢ⊒↢ߒߚᛶ᛫୯ߢ޽ࠆ‫ޕ‬޿ࡈࠚ࡯࡞࠮࡯ࡈᯏ⢻ઃ߈ߢ޽ࠆߎߣ߇್᣿ߒߚ‫ޕ‬ߎࠇࠃࠅ 2 ᰴ㔚࿶߇ 550㨙V, 600㨙V ߩ⿥વዉࠦࠗ࡞߇ࠢࠛࡦ࠴ߒߡ޿ࠆ⁁ᘒߦ߅޿ߡ߽㧘ࠦࠗ࡞ౝߢ⊒↢ߒߚᛶෳ⠨ᢥ₂᛫୯ߪ਄᣹ߖߕߦ޿ࠆ৻ቯ୯ࠍ଻ߞߡ޿ࠆߎߣ߇ࠊ߆ࠆ‫ޕ‬

㩷

1.

㧙㧙

Yuichi Kondo,et al., IEEE Trans. Appl. Super., Vol.19,no.2, pp2337-2340, JUNE. 2009.