ᚑくᄢቇℂᎿቇ⎇ⓥႎ๔
J. Fac. Sci. Tech., Seikei Univ.
Vol.46 No.㧝 (2009) pp.7-12⿥㔚ዉࠦࠗ࡞ߩల㨯᡼㔚↪ߣߒߡߩᄙᢙਗ೉ធ⛯MOSFET ⟲ࠍ↪޿ߚૐ᷷↪⋥ᵹ㔚Ḯߩ⹜૞ㄭ⮮ ␭৻*1㧘⍹ㇹጟ ⁴*2㧘ੑࡁች ᤩ*3Cryogenic DC Power Source with Multi-Parallel-Connected MOSFETs
for Charge/Discharge of Superconducting Coils
Yuichi KONDO*1㧘Takeshi ISHIGOHKA*2㧘Akira NINOMIYA*3
ABSTRACT㧦 The authors have proposed a cryogenic low-voltage/high-current DC power supply using

multi-parallel-connected MOSFETs for an excitation power source of superconducting coils. It has been
confirmed that the power source can operate at 77 K in liquid nitrogen bath. The fundamental idea and someexperimental results are presented. The experiment using 100 MOSFETs connected in parallel are carriedout. The forward-direction voltage drop at 77 K has been measured. The excitation current of thesuperconducting coil can be increased and decreased arbitrarily. This time, a full-wave rectification circuit istested. The experimental results show good prospect of this type of DC power source not only for theexcitation of superconducting coils but also for the forced discharging of the coils.
Keywords㧦cryogenic DC power source, MOSFET, charge and discharge, superconducting coil

(Received March 23, 2009)㧝㧚ߪߓ߼ߦ㧞㧚ታ㛎ⵝ⟎ ৻⥸ߦ㧘⿥㔚ዉࠦࠗ࡞ߩബ⏛ߦߪૐ㔚࿶ᄢ㔚ᵹ⋥ᵹ㔚࿁〝ߩᛶ᛫ࠍᭂജዊߐߊߔࠆߚ߼ߦૐ᷷㗔ၞߢߩ㈩✢Ḯ߇ᔅⷐߛ߇㧘ߘࠇߦߪᭂ߼ߡᄥ޿࡝࡯࠼✢ࠍⷐߔࠆ‫ޕ‬ߦน⢻ߥ㒢ࠅ⿥㔚ዉ࠹࡯ࡊ✢᧚ࠍ↪޿ࠆߎߣߦߒߚ‫ߒޕ‬ߘߎ߆ࠄߩᾲଚ౉ߦࠃࠆ಄ළࡄࡢߩჇᄢࠍᡷༀߔࠆᣇᴺ߆ߒฦ᭴ᚑⷐ⚛ࠍ࿕ቯߖߕ቟ᤃߦ⿥㔚ዉ࠹࡯ࡊ✢᧚ߢ㈩ߣߒߡ㧘ૐ᷷߳ߩ౉ജࠍ੤ᵹዊ㔚ᵹߢⴕ޿㧘ߘࠇࠍᄌ࿶✢ߔࠆߣ᛬ࠇᦛ߇ࠅ╬ߦࠃࠆഠൻ߇↢ߓ߿ߔߊߥࠆߎߣེߢᄢ㔚ᵹߦᄌ឵ߒߚᓟߦ⋥ᵹᄢ㔚ᵹߦᢛᵹߔࠆᚻᴺࠍ߇੍ᗐߐࠇࠆ‫ߢߎߘޕ‬㧘࿑ 1 ߦ␜ߔࠃ߁ߥ㧘ࡌ࡯ࠢ࡜ࠗឭ᩺ߔࠆ‫⎇ᧄޕ‬ⓥߢߪૐ᷷ߢ߽േ૞ߔࠆᢛᵹ⚛ሶߣߒߡ
MOSFET ߦ⌕⋡ߒߚ‫ޕ‬MOSFET ߩ ON ᛶ᛫ߪਗ೉ធ⛯ߒ࠻ߩ࿕ቯ᧼ߩ਄ߦ㧘ᄌ࿶ེ㧘ᄙᢙਗ೉ធ⛯ MOSFET㧘⿥㔚ዉࠦࠗ࡞ࠍ࿕ቯߒߡૐ᷷↪⋥ᵹ㔚Ḯࠍ૞⵾ߒߚ‫ޕ‬ߚ୘ᢙߦ෻Ყ଀ߒߡૐᷫߔࠆ‫ࠍࠇߎޕ‬೑↪ߒߡ㧘ᄙᢙ୘ߩ MOSFET ࠍਗ೉ធ⛯ߒߡ㗅ᣇะ㔚࿶㒠ਅࠍૐᷫߐߖߚᢛᵹⵝ⟎߆ࠄߥࠆૐ᷷↪ૐ㔚࿶ᄢ㔚ᵹ⋥ᵹ㔚Ḯࠍ⹜૞ߒ㧘⿥㔚ዉࠦࠗ࡞ߩల࡮᡼㔚ࠍⴕߞߚ‫ߚ߹ޕ‬㧘ᧄⓂߢߪ㧘ోᵄᢛᵹ࿁〝ൻࠍ࿑ࠅ㧘ബ⏛ㅦᐲߩ਄᣹ࠍ⹜ߺߚ‫ࠇߘޕ‬ࠄߩ⚿ᨐࠍႎ๔ߔࠆ‫ޕ‬㧦㔚᳇㔚ሶᎿቇኾ᡹ୃ჻ቇ↢ (dm073205@cc.seikei.ac.jp)*1㧦㔚᳇㔚ሶᎿቇኾ᡹ᢎ᝼ (ishigoka@st.seikei.ac.jp)*2㧦㔚᳇㔚ሶᎿቇኾ᡹ഥᢎ (ninomiya@st.seikei.ac.jp)*3࿑㧝 ૐ᷷↪⋥ᵹ㔚Ḯో᥊㧙㧙㧚 ᄌ࿶ེ Ᏹ᷷߆ࠄ౉ജߐࠇߚ㜞㔚࿶ዊ㔚ᵹࠍૐ㔚࿶ᄢ㔚ᵹߦߔࠆߚ߼ߩᄌ࿶ེࠍ૞⵾ߒߚ‫ޕ‬ᄌ࿶ེߪ 2 บ૞⵾ߒ㧘৻ᣇࠍᄌ࿶ེ A㧘߽߁৻ᣇࠍᄌ࿶ེ B ߣߒ㧘એ㒠ߎߩ⴫⸥ࠍ

ߎ߆ࠄ⿥㔚ዉࠦࠗ࡞ߦᵹࠇࠆ㔚ᵹࠍ▚಴ߔࠆᚻᴺࠍណ↪
ߒߚ‫ޕ‬ ⿥㔚ዉࠦࠗ࡞ߪ 2 ᨎߩࡌ࡯ࠢ࡜ࠗ࠻᧼ࠍචሼߦ⚵ߺวࠊߖߚ߽ߩࠍⵝ⟎ߦขࠅઃߌ㧘ߘߎߦ፰߼ࠆߎߣߢ࿕ቯ

↪޿ߡ⺑᣿ߔࠆ‫ޕ‬ᄌ࿶ེߩᏎ✢ߪ౉ജߩ৻ᰴᏎ✢㧘⿥㔚ߒߡ޿ࠆ‫ޕ‬චሼ᧼ߩ㜞ߐߪ⿥㔚ዉࠦࠗ࡞ߩ㜞ߐߩඨಽߦ

ዉࠦࠗ࡞߳ߩ಴ജߩੑᰴᏎ✢㧘MOSFET ࠥ࡯࠻ାภ಴

⸳ቯߒߡ޽ࠅ㧘੤Ꮕㇱ߇⿥㔚ዉࠦࠗ࡞ߩਛᔃㇱߦߥࠆࠃജߩਃᰴᏎ✢ߩ⸘ 3 ߟߢ޽ࠆ‫ޕ‬ᄌ࿶ེߩ઀᭽ࠍ⴫ 1 ߦ␜߁ߦߒߡ޿ࠆ‫ߣߎࠆߔ࠻࠶࠮ࠍ࡯ࠨࡦ࠮࡞࡯ࡎߦߎߎޕ‬ߔ‫ޕ‬ߢᏱߦࠦࠗ࡞ߩਛᔃࠍ⏕଻ߢ߈㧘᷹ቯߩᱜ⏕ᕈߩะ਄ߣ
➅ࠅ㄰ߒߩታ㛎ߦ߅ߌࠆౣ⃻ᕈ߇ᓧࠄࠇࠆࠃ߁ߦߒߚ‫ޕ‬⴫㧝 ᄌ࿶ེߩ઀᭽⴫㧞 ⿥㔚ዉࠦࠗ࡞ߩ઀᭽

㧚 ᄙᢙਗ೉ធ⛯ /15('6 ೨ㅀߩㅢࠅ㧘ૐ᷷ߢേ૞ߔࠆᢛᵹ⚛ሶߣߒߡ MOSFET(᧲⦼⵾ 2SK2493)ࠍ૶↪ߒߚ‫ޕ‬MOSFET ⟲ߩ ON ᛶ᛫ࠍዊߐߊߔࠆߚ߼㧘1 ࡙࠾࠶࠻ᒰߚࠅ 100 ୘ࠍਗ೉ធ⛯ߒߡ૶↪ߒߚ‫ޕ‬࿑ 2 ߦߘߩᄖⷰࠍ␜ߔ‫ޕ‬࿑㧟 ⿥㔚ዉࠦࠗ࡞㧟㧚MOSFET ታ㛎㧚 㕒․ᕈ

MOSFET ࠍ 20㧘100㧘200 ୘ਗ೉ធ⛯ߒߡߘߩ㕒․ᕈࠍ᷹ቯߒߚ‫ޕ‬ታ㛎࿁〝ࠍ࿑ 4 ߦ␜ߔ‫ޕ‬ታ㛎ߪࠥ࡯࠻㔚࿶ࠍ 8V ৻ቯߢଏ⛎ߒ㧘࠼࡟ࠗࡦ㧙࠰࡯ࠬ㑆㔚࿶ࠍᄌൻߐߖߚᤨߩ࠼࡟ࠗࡦ㔚ᵹߩ୯ࠍ᷹ቯߒߚ‫ޕ‬࿑㧞 ᄙᢙਗ೉ធ⛯ /15('6 ࡙࠾࠶࠻G:ࠥ࡯࠻㧚 ⿥㔚ዉࠦࠗ࡞

D:࠼࡟ࠗࡦ ታ㛎ߢ૶↪ߒߚ⿥㔚ዉࠦࠗ࡞ߩ઀᭽ߣᄖⷰࠍߘࠇߙࠇ
⴫ 2 ߅ࠃ߮࿑ 3 ߦ␜ߔ‫⿥ޕ‬㔚ዉࠦࠗ࡞ߩ㔚ᵹ᷹ቯߦㅢᏱ

S㧦࠰࡯ࠬߩ᷹ቯེࠍ࿁〝ߦᝌ౉ߔࠆߣᛶ᛫߇Ⴧടߒߡߒ߹߁‫ߘޕ‬ߎߢ⿥㔚ዉࠦࠗ࡞ߩ⏛⇇ࠍࡎ࡯࡞࠮ࡦࠨ࡯ߢ᷹ቯߒ㧘ߘ࿑㧠 㕒․ᕈ᷹ቯ࿁〝㧙㧙㧠㧚⿥㔚ዉࠦࠗ࡞ల࡮᡼㔚ታ㛎㧚 ඨᵄᢛᵹవߕ㧘ඨᵄߦࠃࠆల㔚ታ㛎ࠍⴕߞߚ‫ޕ‬ታ㛎࿁〝ࠍ࿑ 6ߦ␜ߔ‫ޕ‬ታ㛎ߪᄌ࿶ེ A㧘B ਔᣇߦߟ޿ߡⴕߞߚ‫ޕ‬(a) Ᏹ᷷․ᕈ

࿑㧢 ඨᵄᢛᵹታ㛎࿁〝౉ജ㔚Ḯߣߒߡ㧘50Hz න⋧ 200V ߢ಴ജ 0㨪260V ߩࠬ࡜ࠗ࠳࠶ࠢࠍ૶↪ߒߚ‫࠻࡯ࠥޕ‬࿁〝ߦߪ㧘ਃᰴᏎ✢߆ࠄଏ⛎ߐࠇࠆᱜᒏᵄࠍ 8V ߩ⍱ᒻᵄߣߒߡᢛᒻߒࠥ࡯࠻ାภߦ↪޿ࠆߚ߼ߦ࠷ࠚ࠽࡯࠳ࠗࠝ࡯࠼ࠍᝌ౉ߒߚ‫ޕ‬ቯᩰ
ߪ 0.5W ߢ㧘଻⼔ᛶ᛫ߣߒߡ 10kǡࠍធ⛯ߒߡ޿ࠆ‫ޕ‬(b) ૐ᷷․ᕈ(a) 㔚Ḯ㔚࿶߇ᱜߩඨᵄᤨ(c) Ᏹ᷷ߣૐ᷷ߩ․ᕈߩᲧセ࿑㧡 /15('6 㕒․ᕈ
࿑ 5 (a)(b)ߪߘࠇߙࠇᏱ᷷ߣૐ᷷ߦ߅ߌࠆ᷹ቯ⚿ᨐߢ(b) 㔚Ḯ㔚࿶߇⽶ߩඨᵄᤨ޽ࠆ‫ࡦࠗ࡟࠼ޕ‬㧙࠰࡯ࠬ㑆㔚࿶ߢ⷗ߚᤨ㧘୘ᢙ୚ߦᲧ଀

࿑㧣 ඨᵄᢛᵹߩേ૞ߩ⺑᣿࿑ߒߡ㔚ᵹ߇ᵹࠇ߿ߔߊߥߞߡ޿ࠆߎߣ߇ࠊ߆ࠆ‫ߪࠇߎޕ‬ਗ೉ធ⛯ߦࠃߞߡਗ೉୘ᢙಽߩ৻ߦ MOSFET ⟲ߩ ONᛶ᛫߇ᷫዋߒߡ޿ࠆߚ߼ߢ޽ࠆ‫ޕ‬ ࿑ 5(c)ߪ 100 ୘ਗ೉ߢߩᏱ᷷ߣૐ᷷ߩ․ᕈߩᲧセߢ޽࿁〝ߩേ૞ࠍ࿑ 7 ߦ␜ߔ‫ޕ‬࿑ 7 (a)ߢߪ㧘MOSFET ߪOFF ߥߩߢ㧘ੑᰴᏎ✢߆ࠄ⿥㔚ዉࠦࠗ࡞ߦ㔚ᵹ߇ㅍࠄࠇ

ࠆ‫ޕ‬หߓ࠼࡟ࠗࡦ㔚ᵹࠍᵹߔߩߦᔅⷐߥ࠼࡟ࠗࡦ㧙࠰࡯ߡల㔚ߐࠇࠆ‫ޕ‬ᰴߦ㧘ห࿑(b)ߢߪ㧘MOSFET ߇ ON ߦࠬ㑆㔚࿶߇ૐ᷷ߢߪᏱ᷷ߩඨಽߦߥߞߡ߅ࠅ㧘಄ළߦࠃߥࠆߩߢᧄ᧪ల㔚ࠍᛂߜᶖߔᣇะߦᵹࠇࠆߪߕߩ㔚ᵹ߇ࠆᕈ⢻ะ਄߇⏕⹺ߢ߈ࠆ‫ޕ‬ એ਄ࠃࠅ MOSFET ߇ਗ೉ធ⛯ߦࠃߞߡ ON ᛶ᛫߇ᷫMOSFET ߢ⍴⛊ߐࠇ㧘ห࿑(a)ߢల㔚ߐࠇߚ⿥㔚ዉࠦࠗ࡞㔚ᵹߪᓙᯏ⁁ᘒߦߥࠆ‫ޕ‬
ห࿑(a)ߣ(b)ߣߩേ૞ࠍ➅ࠅ㄰ߒߡ⿥㔚ዉࠦࠗ࡞㔚ᵹዋߔࠆߎߣ㧘ૐ᷷ߢേ૞߇น⢻ߢ޽ࠆߎߣ㧘߹ߚ಄ළߦ߇Ⴧടߒߡ޿ߊ‫ޕ‬ࠃࠅᕈ⢻߇ะ਄ߔࠆߎߣ߇⏕⹺ߐࠇߚ‫ޕ‬㧙㧙ᵹߣห᭽ߦ 190V ߢⴕߞߚ‫ޕ‬ታ㛎࿁〝ࠍ࿑ 10 ߦ␜ߔ‫ޕ‬VGSห࿑ߢ਄ㇱ߇࡙࠾࠶࠻ A㧘ਅㇱ߇࡙࠾࠶࠻ B ߢ޽ࠆ‫ޕ‬SC CurrentVDS࿑㧤 ඨᵄᢛᵹᤨߩల㔚㔚ᵹჇടߩ᭽ሶ
࿑ 8 ߪ৻ᰴ㔚࿶ 190V ߢታ㛎ࠍⴕߞߚ⚿ᨐࠍ 0.1s ߩᤨ㑆ゲߢ⷗ߚ߽ߩߢ޽ࠆ‫࠻࡯ࠥޕ‬㔚࿶ߦࠃߞߡ࠼࡟ࠗࡦ㧙࠰࡯ࠬ㑆㔚࿶߇೙ᓮߐࠇߡ޿ࠆߎߣ߇⏕⹺ߢ߈㧘⿥㔚ዉࠦࠗ࡞㔚ᵹ߽ MOSFET ߇ OFF ߩᤨߦߩߺჇടߒߡ޿ࠆߎߣ߇ࠊ߆ࠆ‫ߚ߹ޕ‬㧘0.1s ߢߩ㔚ᵹჇട㊂ߪ 1A ߢ޽ߞ࿑  ోᵄᢛᵹ࿁〝ߚ‫ޕ‬ᧄ࿁〝ߦ߅޿ߡ㊀ⷐߥߩ߇ᄌ࿶ེਃᰴᏎ✢ߩሽ࿷ߢ޽ࠆ‫ޕ‬ㆊ෰ߩ⎇ⓥߦ߅ߌࠆඨᵄᢛᵹ࿁〝ߢߪࠥ࡯࠻ାภࠍ৻ᰴ㔚Ḯ߆ࠄ⋥ធଏ⛎ߒߡ޿ߚ‫ߒ߆ߒޕ‬㧘ోᵄᢛᵹ࿁〝ߢߪ 2 บߩᄙᢙਗ೉ធ⛯ MOSFET ࠍ੤੕ߦ ON/OFF ߔࠆᔅⷐ߇޽ࠅ㧘ߘߩࠥ࡯࠻ାภࠍ㔚Ḯ߆ࠄ⋥ធଏ⛎ߒࠃ߁ߣߔࠆߣࠥ࡯࠻࿁〝߇࡚ࠪ࡯࠻ߒߡߒ߹߁ߣ޿߁໧㗴߇↢ߓߚ‫࠻࡯ࠥߢߎߘޕ‬ାภࠍᄌ࿶ེߦࠃߞߡ㔚᳇⊛ߦ⁛┙ߐߖࠆߎߣߢ໧㗴ߩ⸃᳿ࠍ⹜ߺߚ‫ޕ‬㧞บߩᄌ࿶ེߩ৻ᰴ஥ߪ㔚Ḯߦਗ೉ߦធ⛯ߒߡ޽ࠆ‫ޕ‬ߎࠇߪ⋥೉ធ⛯ߦᲧߴ㧘࡙࠾࠶࠻ A ߣ B ߣߩ⋧੕ᐓᷤࠍ㒐ᱛߔࠆ੐ߦ߽ᓎ┙ߟ‫ޕ‬
࿑ 11 ߪోᵄᢛᵹ࿁〝ߩേ૞ߩ⺑᣿࿑ߢ޽ࠆ‫ޕ‬࿑㧥 ࡙࠾࠶࠻ # ߣ࡙࠾࠶࠻ $ ߩల㔚․ᕈᲧセ㔚Ḯ㔚࿶߇ᱜߩᤨ㧘ห࿑ (a)ߦ␜ߔࠃ߁ߦ㧘࡙࠾࠶࠻ A࿑ 9 ߪᄌ࿶ེ A㧘B(ߘࠇߙࠇ࡙࠾࠶࠻ A ߅ࠃ࡙߮࠾࠶㧔਄஥)ߢߪ MOSFET ߇ ON ߥߩߢᄌ࿶ེ A ߩੑᰴ஥ߪ࿶ེߣᄙᢙ୘ਗ೉ MOSFET ࠍ⚵ߺวࠊߖߚ߽ߩࠍ 1 ࡙࠾৻ᣇ㧘࡙࠾࠶࠻ B㧔ਅ஥㧕ߢߪ MOSFET ߇ OFF ߥߩߢ

MOSFET ߢ⍴⛊ߐࠇ㧘⿥㔚ዉࠦࠗ࡞ߦ㔚ᵹߪㅍࠄࠇߥ޿‫ޕ‬࠻ B ߦኻᔕ)ߢߩల㔚ߩ᭽ሶࠍᲧセߒߚࠣ࡜ࡈߢ޽ࠆ‫ޕ‬ᄌᄌ࿶ེ B ߩੑᰴ஥߆ࠄ⿥㔚ዉࠦࠗ࡞ߦ㔚ᵹ߇ㅍࠄࠇࠆ‫ޕ‬࠶࠻ߣߒ㧘ߘࠇࠍ࡙࠾࠶࠻ A㧘B ߣߒߡ޿ࠆ‫ޕ‬㔚Ḯ㔚࿶߇⽶ߩᤨ㧘ห࿑ (b)ߦ␜ߔࠃ߁ߦ㧘࡙࠾࠶࠻ബ⏛㐿ᆎ⋥ᓟߪਔ⠪ߣ߽หߓჇട㊂ߢ޽ߞߚ߇㧘࡙࠾࠶࠻ A ߪ B ࠃࠅ߽ᣧ޿Ბ㓏ߢ㔚ᵹ߇㘻๺ߒߡߒ߹ߞߚ‫ޕ‬ᦨᄢల㔚㔚ᵹߪ࡙࠾࠶࠻ A ߢ⚂ 18A㧘࡙࠾࠶࠻ B ߢ⚂
28A ߣ 10A ߩᏅ߇↢ߓߚ‫ޕ‬㘻๺㔚ᵹߦᏅ߇↢ߓߚේ࿃ߣߒߡ⠨߃ࠄࠇࠆߩߪ㧘࿁A㧔਄஥)ߢߪ MOSFET ߇ OFF ߥߩߢᄌ࿶ེ A ߩੑᰴ஥߆ࠄ⿥㔚ዉࠦࠗ࡞ߦ㔚ᵹ߇ㅍࠄࠇࠆ‫৻ޕ‬ᣇ࡙࠾࠶࠻ B㧔ਅ஥㧕ߢߪ MOSFET ߇ ON ߥߩߢᄌ࿶ེ B ߩੑᰴ஥߇⍴⛊ߐࠇ㧘⿥㔚ዉࠦࠗ࡞ߦ㔚ᵹߪㅍࠄࠇߥ޿‫ޕ‬
ห࿑(a)ߣ(b)ߦ␜ߔേ૞౒ߦ⿥㔚ዉࠦࠗ࡞ߦㅍࠄࠇࠆ〝ਛߩᱷ⇐ᛶ᛫ߩᏅߢ޽ࠆ‫ޕ‬ૐ᷷㗔ၞߩ㈩✢ࠍ⿥㔚ዉ✢㔚ᵹߩะ߈ߪห৻ߥߩߢ㧘ߎࠇࠍ➅ࠅ㄰ߒߡల㔚߇ⴕࠊ᧚ߢⴕߞߡ޿ࠆߚ߼㧘MOSFET ࠍធ⛯ߒߡ޿ࠆඨ↰╬ߦࠇࠆ‫ޕ‬ࠃࠆᓸዊߥᛶ᛫Ꮕ߇ᓇ㗀ߒߡߒ߹ߞߚ߽ߩߣᕁࠊࠇࠆ‫ޕ‬㧚 ోᵄᢛᵹ ల㔚  ోᵄᢛᵹߦࠃࠆల㔚ታ㛎ࠍⴕߞߚ‫ޕ‬㔚Ḯ㔚࿶ߪඨᵄᢛ㧙㧙࿑  ోᵄᢛᵹల㔚ᤨߩల㔚㔚ᵹߩᄌൻ
 ࿑ 13 ߪ 50s ߩᤨ㑆ゲߢ⷗ߚ⿥㔚ዉࠦࠗ࡞㔚ᵹߩᄌൻߢ޽ࠆ‫ޕ‬ల㔚㐿ᆎ߆ࠄ⚂ 3 ⑽ߢ⚂ 39A ߹ߢ೔㆐ߒߡ㘻๺ߒߡ޿ࠆ‫⇇⥃ߩ࡞ࠗࠦޕ‬㔚ᵹ߇ 42.9A ߥߩߢ㧘߶߷⥃⇇⋥(a) 㔚Ḯ㔚࿶߇ᱜߩඨᵄᤨ೨߹ߢల㔚ߔࠆߎߣ߇ߢ߈ߚߣ⸒߃ࠆ‫ޕ‬࿑  ోᵄඨᵄల㔚Ყセ(b) 㔚Ḯ㔚࿶߇⽶ߩඨᵄᤨ ࿑ 14 ߪోᵄᢛᵹߣඨᵄᢛᵹߩల㔚ߩᲧセߢ޽ࠆ‫ోޕ‬ᵄ࿑  ోᵄᢛᵹേ૞ߩ⺑᣿࿑ᢛᵹ߇ඨᵄᢛᵹࠃࠅ߽㜞ㅦ߆ߟᄢ㔚ᵹ߹ߢߩల㔚߇ⴕ߃ߡ޿ࠆߎߣ߇ࠊ߆ࠆ‫ోޕ‬ᵄᢛᵹߪඨᵄᢛᵹ A㧘B ࠍ⿷ߒVGS(A ஥)ߚ࿁〝ߥߩߢ㧘㔚ᵹ୯߽ਔ⠪ࠍ⿷ߒߚ୯ߦߥࠆߪߕߢ޽VGS(B ஥)ࠆ߇㧘ታ᷹୯ߪ⧯ᐓߩᏅ߇޽ߞߚ‫ ߪࠇߎޕ‬2 ߟߩ࿁〝ࠍធ⛯ߒߚ㓙ߩធ⛯ᛶ᛫ߩჇടߦࠃࠆᓇ㗀ߣ⠨߃ࠄࠇࠆ‫ޕ‬SC Current㧚 ోᵄᢛᵹ ᡼㔚 
VDS(A ஥)VDS(B ஥) ోᵄᢛᵹ࿁〝ߦࠃࠆᒝ೙᡼㔚ታ㛎ࠍⴕߞߚ‫ޕ‬࿁〝ࠍ࿑
15 ߦ␜ߔ‫࠻࡯ࠥࠅࠃߦࠣࡦ࠴࠶ࠗࠬޕ‬ାภࠍ෻ォߐߖߡᒝ೙᡼㔚߇ⴕ߃ࠆࠃ߁ߦߒߚ‫ޕ‬࿑  ోᵄᢛᵹᤨߩల㔚㔚ᵹჇടߩ᭽ሶ
࿑ 12 ߪ 0.1s ߩᤨ㑆ゲߢ⷗ߚ᷹ቯ⚿ᨐߢ޽ࠆ‫ޕ‬ᄌ࿶ེ߇⍴⛊ߒߡ޿ࠆߣ߈㧘߽߁ᣇߩᣇߩᄌ࿶ེ߆ࠄ⿥㔚ዉࠦࠗ࡞ߦ㔚ᵹ߇ଏ⛎ߐࠇ㧘Ᏹߦ㔚ᵹ߇Ⴧടߒߡ޿ࠆߎߣ߇ࠊ߆ࠆ‫ޕ‬
 0.1s ߢߩ㔚ᵹჇട㊂ߪ⚂ 1.7A ߢ޽ࠆߎߣ߇⺒ߺขࠇ㧘ඨᵄᢛᵹߩ߶߷ 2 ୚ߩബ⏛ㅦᐲ߇ᓧࠄࠇߚߎߣ߇್ࠆ‫ޕ‬࿑  ోᵄᢛᵹ࿁〝ߦࠃࠆᒝ೙᡼㔚ታ㛎࿁〝㧙㧙㧡㧚⚿ ⺰
VGS(A ஥)VGS(B ஥) ታ㛎⚿ᨐࠃࠅ㧘એਅߩߎߣ߇⏕⹺ߢ߈ߚ‫ޕ‬• ᄙᢙਗ೉ធ⛯ MOSFET ࠍ↪޿ߚోᵄᢛᵹ࿁〝ߩታSC Current⃻‫ޕ‬• ඨᵄᢛᵹ߆ࠄోᵄᢛᵹߦߔࠆߎߣߢ㜞ㅦ߆ߟᄢ㔚
VDS(A ஥)VDS(B ஥)ᵹߩల㔚߇น⢻‫ޕ‬• ࠥ࡯࠻ߩ૏⋧ࠍ෻ォߐߖࠆߎߣߢ⿥㔚ዉࠦࠗ࡞ߩᒝ೙᡼㔚߇น⢻‫ޕ‬ඨᵄᢛᵹ߆ࠄోᵄᢛᵹߦᡷༀߔࠆߎߣߦࠃߞߡ㧘ࠃࠅല₸⦟ߊ⿥㔚ዉࠦࠗ࡞ࠍల㔚ߔࠆߎߣ߇น⢻ߦߥࠆ‫߹ޕ‬࿑  ᒝ೙᡼㔚ᤨߩ㔚ᵹᷫዋߩ᭽ሶߚ㧘߽ߒ⿥㔚ዉࠦࠗ࡞߇ࠢࠛࡦ࠴ߒߡ߽㧘ᒝ೙᡼㔚ߦࠃ ࿑ 16 ߪᒝ೙᡼㔚ࠍ 0.1s ߩᤨ㑆ゲߢ᷹ቯߒߚ߽ߩߢ޽ߞߡࠛࡀ࡞ࠡ࡯ࠍ᡼಴ߒߡෂ㒾ࠍ࿁ㆱߔࠆߎߣ߇ߢ߈ࠆ‫ޕ‬ࠆ‫࠻࡯ࠥޕ‬ାภߩ૏⋧߇෻ォߔࠆߎߣߢ㧘࠼࡟ࠗࡦ㧙࠰੹ᓟߩᡷ⦟᩺ߣߒߡ⠨߃ࠄࠇࠆߩߪ㧘MOSFET ߩਗ࡯ࠬ㑆㔚࿶߇෻ォߒߡ޿ࠆߩ߇ࠊ߆ࠆ‫ߚ߹ޕ‬㧘෻ォߒߚ೉ធ⛯ᢙߩჇട߿㧘ඨ↰ធ⛯ߩᡷༀߦࠃࠆᱷ⇐ᛶ᛫ߩૐߎߣߦࠃߞߡነ↢࠳ࠗࠝ࡯࠼߇ ON ߦߥߞߡ߅ࠅ㧘㔚࿶ᷫ╬ߢ޽ࠆ‫ߚ߹ޕ‬㧘ታ㓙ߩ⿥㔚ዉࠦࠗ࡞ߩࠢࠛࡦ࠴ᤨߦ

ᵄᒻ߇ 1V ߹ߢߣߥߞߡ޿ࠆߎߣ߇್ࠆ‫ޕ‬߅ߌࠆᒝ೙᡼㔚ߩታ⸽ߦߟ޿ߡߪ㧘੹ᓟߩታᣉࠍߒߚ޿ߣ⠨߃ߡ޿ࠆ‫ޕ‬ෳ⠨ᢥ₂1)

T. Ishigohka, S. Takahashi, and R. Kawanami, ̌Low
Temperature Characteristics of MOSFET and its

Application,̍ Proceedings of 70th Meeting on Cryogenics

and Superconductivity, Cryogenic Society of Japan,2)࿑  ⥄ὼ᡼㔚ߣᒝ೙᡼㔚ߩᲧセ

p.216, May 2004.

R.

Kawanami,T.

⥄ὼ᡼㔚߇ᜰᢙ㑐ᢙ⊛ߦࠁߞߊࠅᷫ⴮ߒߡ޿ࠆߩߦኻߒ㧘ᒝ೙᡼㔚ߪ⚂ 1 ⑽ߢ 0A ߹ߢ⋥✢⊛ߦ᡼㔚ߒߡ޿ࠆ‫ߒޕ‬3)߆ߒᒝ೙᡼㔚ᓟߦ⥄ὼߦ 5A ㄭߊ㔚ᵹჇടߒߡߒ߹޿㧘ߘߩᓟ⥄ὼ᡼㔚ߣ㊀ߥࠆᒻߢᷫ⴮ࠍߒߚ‫ ࠻࠶࠾࡙ޕ‬A㧘
B ߩᛶ᛫Ꮕߩᓇ㗀߿㧘ᄌ࿶ེߩṳࠇࠗࡦ࠳ࠢ࠲ࡦࠬߩᓇ

“LowTemperature

Characteristics of MOSFET Targeting Low-Voltage
High-Current Power ࿑ 17 ߪ⥄ὼ᡼㔚ߣᒝ೙᡼㔚ࠍᲧセߒߚ߽ߩߢ޽ࠆ‫ޕ‬Ishigoka

Source forMagnets” MT-19, Genova.

SuperconductingᎹᶉ ੫㧘⍹ㇹጟ ⁴㧘ੑࡁች ᤩ‫⿥ޟ‬㔚ዉࡑࠣࡀ࠶࠻ߩബ⏛ߩߚ߼ߩ MOSFET ࠍ↪޿ߚૐ᷷↪ૐ㔚࿶ᄢ㔚ᵹ㔚Ḯߩ⹜૞ߣ⹜㛎‫ ╙ޠ‬73 ࿁ 2005 ᐕᐲ⑺ቄ4)

㗀ߣ⠨߃ࠄࠇࠆ߇㧘⹦⚦ࠍ⓭߈ᱛ߼ࠆߦߪ⥋ࠄߥ߆ߞߚ‫ޕ‬ૐ᷷Ꮏቇ࡮⿥㔚ዉቇળ p.256

Takeshi ISHIGOHKA, Akira NINOMIYA, Yuichi

KONDO, and Shohei FUKANO “Cryogenic DC Power

Source using Multi-Parallel-Connected MOSFETs andߛ߇ᒝ೙᡼㔚ߪ✕ᕆᤨߦ㜞ㅦߢ᡼㔚ࠍⴕ߁ߎߣ߇⋡⊛ߥߩߢ㧘0A ઃㄭ߹ߢ᡼㔚ߔࠆߎߣ߇಴᧪ߚߣ੐ߪࠛࡀ࡞Charge/Discharge Experiment of Superconducting Coil”

Reprinted from the Journal of the Faculty of Scienceࠡ࡯ߩᄢඨࠍ࿁෼ߢ߈ߚߣ޿߁ᗧ๧ࠍᜬߜ㧘⿥㔚ዉࠦࠗ

and Technology, Seikei University Vol.45 No.2, 2008࡞ߩ଻⼔ߩߚ߼ߦߪචಽߥ⚿ᨐߢ޽ࠆߣ⸒߃ࠆ‫ޕ‬㧙㧙