ᚑくᄢቇℂᎿቇ⎇ⓥႎ๔
J. Fac. Sci. Tech., Seikei Univ.
Vol.45 No.2 (2008) pp.55-59
㧔․೎⎇ⓥ⾌ߦଥࠆ⺰ᢥ㧕㩷ᄙᢙਗ೉ /15('6 ࠍ↪޿ߚૐ᷷↪⋥ᵹ㔚Ḯߣ⿥㔚ዉࠦࠗ࡞ߩల࡮᡼㔚ታ㛎12㩷⍹ㇹጟ ⁴* 㧘ੑࡁች ᤩ* 㧘ㄭ⮮ ␭৻*3㧘ᷓ㊁ ⠍ᐔ*4

Cryogenic DC Power Source using Multi-Parallel-Connected MOSFETs
and Charge/Discharge Experiment of Superconducting CoilTakeshi ISHIGOHKA*1, Akira NINOMIYA*2, Yuichi KONDO*3, Shohei FUKANO*4ABSTRACT㧦 The authors have proposed a cryogenic low-voltage/high-current DC power source using
multi-parallel-connected MOSFETs as an excitation power source of superconducting coils. It has been
confirmed that the power source can operate at 77 K in liquid nitrogen bath. The fundamental idea andexperimental results are presented. The experiment using 200 MOSFETs connected in parallel are carriedout. The forward-direction voltage drop at 77 K has been measured. The excitation current of thesuperconducting coil can be increased and decreased arbitrarily. The experimental results show goodprospect of this type of DC power source not only for the excitation of superconducting coils but also forthe forced discharging of the coils.
Keywords㧦MOSFET, cryogenic DC power source, superconducting coil, charge and discharge(Received September 25, 2008)㧝㧚ߪߓ߼ߦ㧞㧚ታ㛎ⵝ⟎ ࠦࠗ࡞ߩബ⏛ߦߪ㧘ૐ㔚࿶ᄢ㔚ᵹ⋥ᵹ㔚Ḯࠍᔅⷐߣߔ㧚 ⿥㔚ዉᄌᵹེ ૶↪ߒߚ⿥㔚ዉᄌᵹེߩ઀᭽ࠍ⴫ 1 ߦ␜ߔ‫ޕ‬ࠆ‫ߒ߆ߒޕ‬㧘ૐ᷷㗔ၞߦ޽ࠆ⿥㔚ዉࠦࠗ࡞ߦ⋥ᵹ㔚ᵹࠍଏ⛎ߔࠆ㓙ߦߪ㧘ᭂ߼ߡᄥ޿࡝࡯࠼✢ࠍⷐߒ㧘ቶ᷷ㇱ߆⴫  ᄌᵹེߩ઀᭽ࠄૐ᷷ㇱߦ౉ࠆ࡝࡯࠼✢ߦࠃࠆଚ౉ᾲߦࠃࠆᶧ૕⓸⚛ߩ⫳⊒߇ᄢ߈ߊ㧘಄ළࠦࠬ࠻߇ᄢ߈ߊߥࠆߣ޿߁໧㗴߇⊒৻ᰴᏎ✢ ᧚ᢱ↢ߔࠆ‫ߩߎޕ‬ኻ╷ߣߒߡ㧘ቶ᷷߆ࠄ੤ᵹዊ㔚ᵹࠍ౉ജߒ㧘Ꮞᢙૐ᷷ኈེౝߢᄌᵹེߦࠃࠅ੤ᵹᄢ㔚ᵹߦᄌ឵ߒ㧘ߘߩᓟੑᰴᏎ✢ ᧚ᢱᢛᵹⵝ⟎ߦࠃࠅ⋥ᵹᄢ㔚ᵹࠍᓧࠆߎߣ߇⠨߃ࠄࠇࠆ‫ߎޕ‬   Ꮞᢙߩߚ߼㧘ᧄ⎇ⓥߢߪ㧘৻ᰴᏱ㔚ዉ/ੑᰴ⿥㔚ዉᑼᄌᵹེߣ㧘ૐ᷷ߢ߽േ૞ߔࠆ MOSFET ࠍ↪޿㧘ߎࠇࠍᄙᢙ୘ਗ೉ធ㋕ᔃ  ᧚ᢱ    ᢿ㕙⋥ᓘ⛯ߒߡ㗅ᣇะ㔚࿶㒠ਅࠍૐᷫߐߖߚᢛᵹⵝ⟎߆ࠄߥࠆૐ     ⏛〝㐳᷷↪ૐ㔚࿶ᄢ㔚ᵹ⋥ᵹ㔚Ḯࠍ⹜૞ߒ㧘ߎࠇࠍ↪޿ߡ⿥㔚㌃✢㧦0.56 mmǾ
500/1000/1500

Bi2223/Ag HTS tape
3/10

silicon steel
27.5 mmǾ320 mmዉࠦࠗ࡞ߩల㨯᡼㔚⹜㛎ࠍⴕߞߚ‫ޕ‬ ৻ᰴ஥ߪ⋥ᓘ 0.56[চ]ߩࡎ࡞ࡑ࡯࡞㌃✢ࠍ↪޿㧘500

߅ࠃ߮ 1000 ࠲࡯ࡦߩࠦࠗ࡞ࠍᏎ޿ߚ‫⋥ࠍࠄࠇߎޕ‬೉ߦធ㧦ࠛ࡟ࠢ࠻ࡠࡔࠞ࠾ࠢࠬቇ⑼ᢎ᝼ (ishigoka@st.seikei.ac.jp)*1*2⛯ߔࠆߎߣߦࠃࠅ 1500 ࠲࡯ࡦߣߔࠆߎߣ߽ߢ߈ࠆ‫ޕ‬ੑᰴ஥ߪ Bi-2223/Ag HTS ࠹࡯ࡊ✢᧚ࠍ↪޿㧘3㧘޽ࠆ޿ߪ 10㧦ࠛ࡟ࠢ࠻ࡠࡔࠞ࠾ࠢࠬቇ⑼ഥᢎ
*3㧦㔚᳇㔚ሶᎿቇኾ᡹ቇ↢㧦㔚᳇㔚ሶᎿቇኾ᡹ቇ↢(⃻࿷᧲੩ࠛ࡟ࠢ࠻ࡠࡦࢃൕോ)*4࠲࡯ࡦߩ⿥㔚ዉᏎ✢ࠍᏎ޿ߚ‫ߚ߹ޕ‬㧘ᄌᵹེߩ㋕ᔃߦߪᢿ㕙Ⓧ 594 [চ 2]㧘⏛〝㐳 320 [চ]ߩ⃯⚛㍑⵾Ꮞ㋕ᔃࠍ↪

㧙㧙޿ߚ‫⿥ޕ‬㔚ዉᄌᵹེߩ᭎ⷰࠍ࿑ 1 ߦ␜ߔ‫ޕ‬߇ᵹࠇߡߒ߹߁‫ߪࠇߎޕ‬ነ↢࠳ࠗࠝ࡯࠼ߦࠃࠆ߽ߩߢ޽ࠆ‫⪺ޕ‬⠪╬ߪ㧘ߘߩ on 㔚࿶߇ቶ᷷߅ࠃ߮ૐ᷷ߢ㧘ߘࠇߙࠇ⚂ 0.5 ߅ࠃ߮ 1[V]ߢ޽ࠆߎߣࠍታ㛎ߦࠃߞߡ⏕⹺ߒߚ‫ޕ‬ቶ᷷㧘ૐ᷷(77K)ߦ߅ߌࠆታ㛎⚿ᨐࠍ࿑ 3 a)㧘b)ߦ␜ߔ‫ޕ‬࿑  ⿥㔚ዉᄌᵹེ
࿑ C  ነ↢࠳ࠗࠝ࡯࠼㕒․ᕈ Ᏹ᷷ 㧚  ୘ਗ೉ /15('6 ࡙࠾࠶࠻
 ࿑ 2 ߦ⹜૞ߒߚ 200 ୘ਗ೉ MOSFET ࡙࠾࠶࠻ߩ᭎ⷰࠍ␜ߔ‫ ⵾⦼᧲ޕ‬2SK2493 MOSFET ࠍ 100 ୘ਗ೉ߦធ⛯ߒߚ

߽ߩࠍ 2 ⚵↪޿ߡ 200 ୘ਗ೉ߣߒߡታ㛎ߦ↪޿ߚ‫ߚ߹ޕ‬㧘ߎߩ⚛ሶߩ D-S 㑆㔚࿶/G-S 㑆㔚࿶ߩߘࠇߙࠇߩቯᩰ୯ߪ
16/8[V]ߢ޽ࠅ㧘ቯᩰ㔚ᵹߪ 5[A]ߢ޽ࠆ‫ޕ‬࿑ D  ነ↢࠳ࠗࠝ࡯࠼㕒․ᕈ ૐ᷷ 㧠㧚ల࡮᡼㔚⹜㛎 ల㔚⹜㛎 ࿑㧠ߦၮᧄബ⏛⹜㛎࿁〝ࠍ␜ߔ‫৻ޕ‬ᰴ஥㔚࿶ߪ 100㧘

200㧘260[V]ߩਃ⒳㘃ߢታ㛎ߒߚ‫ߩߎޕ‬࿁〝ߦࠃࠅ㧘ੑᰴ஥ߩ⿥㔚ዉࠦࠗ࡞ߦ⋥ᵹ㔚ᵹࠍଏ⛎ߒߚ‫ޕ‬ ࿑ 5 a)㧘b)ߪల㔚ᤨߩේℂߩ⺑᣿࿑ߢ޽ࠆ‫ޕ‬࿑  /15('6 ୘ਗ೉࡙࠾࠶࠻ ࠰࡯ࠬ஥߇ࡊ࡜ࠬߩߣ߈㧘ࠥ࡯࠻ାภߪ౉ജߐࠇߕ㧘⿥㔚ዉࠦࠗ࡞ߦߪ৻ቯߩ⋥ᵹ㔚࿶߇ශടߒߡബ⏛㔚ᵹ߇ ࠷ࠚ࠽࡯࠳ࠗࠝ࡯࠼਄᣹ߔࠆ‫ޕ‬ ᧄታ㛎ߢߪቯᩰ G-S 㑆㔚࿶ 8.1[V]㧘0.5[W]ߩ࠷ࠚ࠽࡯ ࠼࡟ࠗࡦ஥߇ࡊ࡜ࠬߩߣ߈㧘ࠥ࡯࠻ߦߪ⚂ 8V ߩ㔚࿶࠳ࠗࠝ࡯࠼ࠍ↪޿ߚ‫ߩߘޕ‬ቯᩰࠃࠅචಽᄢ߈޿ᵄ㜞୯ߩ߇߆߆ࠅ㧘MOSFET ߇ࠝࡦ⁁ᘒߣߥߞߡ㧘ੑᰴ㔚࿶ߪ⍴੤ᵹ㔚࿶ࠍᢛᒻߒߡㄭૃ⊛ߥ⍱ᒻᵄ㔚࿶ࠍ૞ࠅ㧘ߎࠇࠍ⛊ߐࠇ㧘⿥㔚ዉࠦࠗ࡞ߦߪ㔚࿶߇ශടߐࠇߕ㧘ᓙᯏ⁁ᘒ

G-S 㑆ߦශടߔࠆߎߣߦࠃࠅ⏕ታߥേ૞ࠍታ⃻ߒߚ‫ޕ‬ߦߥࠆ‫ޕ‬ബ⏛㔚ᵹ਄᣹㧘ᓙᯏࠍ➅ࠅ㄰ߒᓢ‫⿥ߦޘ‬㔚ዉࠦࠗ࡞ߩബ⏛㔚ᵹߪჇടߒߡ޿ߊ‫ޕ‬ᓙᯏ⁁ᘒߩߣ߈㧘ബ⏛

㧟㧚/15('6 ߩነ↢࠳ࠗࠝ࡯࠼ߩ․ᕈ

㔚ᵹߪᤨቯᢙߦᓥߞߡᷫ⴮ߔࠆ߇㧘਄᣹ᤨߩ㔚ᵹߩჇടߩᣇ߇ᄢ߈޿ߚ߼⚿ᨐ⊛ߦల㔚ߐࠇߡ޿ߊ‫ޕ‬ MOSFET ߩ․ᓽߣߒߡ㧘D-S 㑆ߦ޽ࠆ୯એ਄ߩㅒᣇะ
㔚࿶߇ដ߆ࠆߣ㧘ࠥ࡯࠻㔚࿶߇㔖ߢ߽ SψD ᣇะߦ㔚ᵹ㧙㧙ߒߚ‫ޕ‬࿑㧠 ၮᧄബ⏛⹜㛎࿁〝࿑㧡C  ബ⏛㔚ᵹ਄᣹ ࠥ࡯࠻㐿᡼᡼㔚േ૞ 㔚Ḯ㔚࿶ߪශടߒߚ߹߹ߢ߽㧘ࠥ࡯࠻ࠍ㐿᡼ߔࠆߣ⿥㔚ዉࠦࠗ࡞ߩബ⏛㔚ᵹߪᷫ⴮ߔࠆ‫ߜࠊߥߔޕ‬㧘ࠥ࡯࠻㐿᡼᡼㔚⹜㛎ߢߪ㧘࿑ 4 ߩ࿁〝ߢ㧘ࠬࠗ࠶࠴ 1 ࠍ㐿߈㧘ࠥ࿑㧡D  ബ⏛㔚ᵹᓙᯏ࡯࠻ାภߪ౉ജߐࠇߥ޿‫ࡦࠗ࡟࠼ޕ‬஥߇ࡊ࡜ࠬߩߣ߈㧘 ࿑㧢㧘㧣㧘㧤ߦ৻ᰴ஥㔚࿶ 100㧘200㧘260[V]ߩ႐วߩ⿥㔚ዉࠦࠗ࡞ߦߪㅒ㔚࿶߇ශടߒ㧘ബ⏛㔚ᵹࠍᛥ೙ߔࠆ‫ޕ‬᷹ⷰ⚿ᨐࠍ␜ߔ‫৻ޕ‬ᰴ㔚࿶߇㜞޿ᣇ߇ബ⏛㔚ᵹߩ㘻๺୯߹ߚ㧘࠰࡯ࠬ஥߇ࡊ࡜ࠬߩߣ߈㧘⿥㔚ዉࠦࠗ࡞ߦߪ㗅㔚߇ᄢ߈ߊ㧘ల㔚ߦⷐߔࠆᤨ㑆߽⍴޿ߎߣ߇᣿ࠄ߆ߢ޽ࠆ‫ޕ‬࿶߇ශടߒ㧘ബ⏛㔚ᵹߪჇടߔࠆ‫ߒ߆ߒޕ‬㧘㗅࡮ㅒᱜ๧ ߥ߅㧘HTS ࠦࠗ࡞ߩ⥃⇇㔚ᵹ୯߇⚂ 42[A]ߢ޽ࠆߚ߼㧘ߩᐔဋ㔚࿶ߪ㔖ߣߥࠅ㧘࿁〝ߩᱷ⇐ᛶ᛫ߦࠃࠆᷫ⴮ᤨቯബ⏛㔚ᵹߩ਄㒢୯ࠍ⥃⇇㔚ᵹߩ 70㧑⒟ᐲߩ 30[A]߹ߢߣ

ᢙߦᓥ޿ᓢ‫ߦޘ‬᡼㔚ߐࠇࠆ‫ޕ‬㧙㧙 ৻ᰴ஥ߦ 260[V]ߩ੤ᵹ㔚࿶ࠍශടߒ㧘ੑᰴ஥ߩ⿥㔚ዉ

30kǡࠬࠗ࠶࠴㧝ࠦࠗ࡞ࠍᚲቯߩ㔚ᵹ୯߹ߢബ⏛ߒߚᓟ㧘ࠥ࡯࠻㐿᡼᡼㔚⹜㛎ࠍⴕߞߚ‫ޕ‬ ⥄ὼ᡼㔚⹜㛎㪪㪚ࠦࠗ࡞ ታ㛎ߪ㧘వߕ㧘ᄌᵹེߩ৻ᰴ஥ߦ 260[V]ߩ㔚࿶ࠍශടߒ㧘⿥㔚ዉࠦࠗ࡞ࠍ⚂ 30[A]߹ߢల㔚ߔࠆ‫ޕ‬㔚ᵹ߇ 30[A]ల㔚ߐࠇߚ⁁ᘒߢ࿑㧠ߩࠬࠗ࠶࠴ 1 ߣ 2 ࠍหᤨߦಾࠅ㧘

1500:3⿥㔚ዉࠦࠗ࡞ߦ߆߆ࠆ㔚࿶ࠍ㔖ߦߒߚ⁁ᘒߢߩ㔚ᵹߩᄌൻࠍ⸥㍳ߒߚ‫߅ߥޕ‬㧘HTS ࠦࠗ࡞ߩ⥃⇇㔚ᵹ୯߇⚂ 42[A]ᶧ૕⓸⚛ਛߢ޽ࠆߚ߼㧘ബ⏛㔚ᵹ୯ߪߘߩ 70㧑⒟ᐲߩ 30[A]߹ߢߣ
ࠬࠗ࠶࠴㧞ߒߡታ㛎ߒߚ‫ޕ‬ ࿑㧥ߪ⿥㔚ዉࠦࠗ࡞ࠍ⚂ 30[A]߹ߢల㔚ߒߡ߆ࠄࠬࠗ࿑ C  ᒝ೙᡼㔚⹜㛎࿁〝࠶࠴㧝߅ࠃ߮㧞ࠍ౒ߦಾߞߡ᡼㔚ߒߚ႐ว㧘ߔߥࠊߜ৻ᰴ㔚࿶ߣࠥ࡯࠻㔚࿶ࠍ౒ߦ off ߦߒ㧘⿥㔚ዉࠦࠗ࡞ࠍቢࠬࠗ࠶࠴㧝ోߦή㔚࿶⁁ᘒߦߒߚ႐วߩታ㛎⚿ᨐߢ޽ࠆ‫ޕ‬ห࿑ࠍ⷗ࠆߣ㧘౒ߦቢోߦ᡼㔚ߔࠆ߹ߢ㧘⚂ 30[s]ࠍⷐߒߡ޿ࠆߎ
ߣ߇್ࠆ‫ޕ‬30kǡGࠬࠗ࠶࠴㧞 ᒝ೙᡼㔚⹜㛎࿑ D  )5 㑆㔚࿶೙ᓮ࿁〝 ⿥㔚ዉࠦࠗ࡞߇૗ࠄ߆ߩේ࿃ߦࠃࠅਁ৻ߩࠢࠛࡦ࠴ࠍ
⊒↢ߒߚ႐วߦߪ㧘⿥㔚ዉࠦࠗ࡞ߩ὾៊╬ߩ㊀ᄢ੐᡿ࠍ㒐ᱛߔࠆߚ߼㧘น෸⊛ㅦ߿߆ߦബ⏛㔚ᵹࠍᒝ೙⊛ߦ᡼㔚ߐߖࠆᒝ೙᡼㔚േ૞߇ᔅⷐߦߥࠆ‫ޕ‬ ࿑ 10 a)ߦᒝ೙᡼㔚ߩታ㛎࿁〝ࠍ␜ߔ‫ߩߎޕ‬ታ㛎ߢߪ㧘৻ᰴ஥ߦ 260[V]ࠍශടߒ HTS ࠦࠗ࡞ࠍ⚂ 30[A]߹ߢల㔚ߒߚᓟ㧘ࠬࠗ࠶࠴ࡦࠣߦࠃࠅ G-S 㑆ߦల㔚ᤨߣߪ૏⋧߇

180 ᐲߕࠇߚ⍱ᒻᵄ㔚࿶ࠍශടߒߡ᡼㔚ߐߖߚ‫ࠅ߹ߟޕ‬㧘ࠥ࡯࠻㔚࿶ߪ৻ᰴ㔚࿶ߣ૏⋧߇ 180 ᐲߕࠇߡ޿ࠆ‫ޕ‬࿑ 10b)ߦ G-S 㑆㔚࿶೙ᓮ࿁〝ࠍ␜ߔ‫߇࠴࠶ࠗࠬߩࠇߙࠇߘޕ‬࿑ 10 b)ߦ␜ߔ૏⟎ߦ޽ࠆߣ߈㧘৻ᰴ஥ߩ㔚࿶ߣ G-S 㔚࿶ߪห૏⋧ߦߥࠅ㧘ߎࠇࠄߩࠬࠗ࠶࠴ࠍหᤨߦಾࠅ឵߃ࠆߣ૏⋧߇ 180 ᐲߕࠇߚ߽ߩ߇ᓧࠄࠇࠆ‫ޕ‬࿑ 11 a)㧘b)ߦታ
㛎⚿ᨐࠍ␜ߔ‫ޕ‬㧙㧙S࿑ D  ฦ⒳᡼㔚ᤨߩ㔚ᵹᄌൻߩᲧセ ࿑ 11 a)ߦ߅޿ߡ㧘㔚ᵹᷫዋᤨߦ G-S 㑆ߦ૏⋧߇ 180 ᐲߕࠇߚ㔚࿶߇߆߆ߞߡ޿ࠆ‫ޕ‬࿑ 11 b)ߪ

࿑ 11 a)ߩࠥ࡯

㧡㧚⚿ ⺰࠻ାภ૏⋧߇ಾ឵ࠊߞߡ޿ࠆㇱಽࠍ᜛ᄢߒߚ߽ߩߢ㧘
G-S 㔚࿶ߩ૏⋧߇ 180 ᐲߕࠇߡ޿ࠆߎߣ߇⏕⹺ߢ߈ࠆ‫ޕ‬ એ਄ߩታ㛎ߦ߅޿ߡ㧘ᧄ⎇ⓥߩ⋡⊛ߢ޽ࠆ㧘ቶ᷷ㇱߢ࿑㧥ߩ⥄ὼ᡼㔚⹜㛎ߩ⚿ᨐߣᲧセߔࠆߣ㧘᣿ࠄ߆ߦ᡼㔚ߪ㜞㔚࿶ዊ㔚ᵹ౉ജ㧘ૐ᷷ㇱߢߪૐ㔚࿶ᄢ㔚ᵹ಴ജߩૐ

߇ᣧ߼ࠄࠇߡ޿ࠆߎߣ߇⏕⹺ߢ߈ࠆ‫ޕ‬᷷↪⋥ᵹᄢ㔚ᵹ㔚Ḯߩേ૞߇⏕⹺ߢ߈ߚ‫ޕ‬ታ㛎ߦ૶↪ߒߚᄙᢙਗ೉ធ⛯ MOSFET ࠕ࡟࡯ߪ㧘ૐ᷷ߢ૶↪น⢻ߢ㧘 ᕆㅦᒝ೙᡼㔚⹜㛎චಽ㗅ᣇะᛶ᛫߇ዊߐ޿ߎߣ߇್ߞߚ‫ޕ‬ ᡼㔚ߩ㓙ߦ㧘MOSFET ߩࠥ࡯࠻ାภߩ૏⋧ࠍ 180 ᐲ෻ ߹ߚ㧘㔚Ḯ㔚࿶ߣᄌᵹᲧࠍᄌൻߐߖࠆߎߣߢల㔚ㅦᐲォߐߖࠆߎߣߦട߃㧘ᄌ࿶ེߩ৻ᰴ஥Ꮞᢙࠍ 1500 ߆ࠄߩࡄ࠲࡯ࡦࠍછᗧߦᄌ߃ࠆߎߣ߇ߢ߈ࠆߎߣ㧘߹ߚ㧘᡼

1000 ޽ࠆ޿ߪ 500 ߦಾࠅ឵߃ࠆߎߣߦࠃࠅੑᰴ㔚࿶ࠍ㜞㔚ᤨߦࠥ࡯࠻ାภߩ૏⋧ࠍ෻ォߐߖࠆߎߣߦࠃࠅ㧘ࠃࠅ߼㧘ᦝߥࠆ᡼㔚ᤨ㑆ߩ⍴❗ࠍታ⃻ߐߖࠆታ㛎ࠍⴕߞߚ‫ޕ‬㜞ㅦߦ᡼㔚ߢ߈ࠆߎߣ߇⏕⹺ߢ߈ߚ‫ࠅࠃߦࠇߎޕ‬㧘⿥㔚ߥ߅㧘ల㔚ᤨߩ৻ᰴ㧦ੑᰴᏎᢙᲧߪ 1500㧦3 ߢ޽ࠆ‫ޕ‬ዉࠦࠗ࡞߇ਁ৻ߩࠢࠛࡦ࠴ߦ⥋ߞߚ႐วߢ߽቟ోߦߘߩ ࿑ 12 a)ߦᕆㅦᒝ೙᡼㔚ߩ᷹ⷰ⚿ᨐࠍ␜ߔ‫ߩߎޕ‬ᕆㅦᒝ೙᡼㔚ߢߪ⚂ 3[s]ߢቢో᡼㔚ߢ߈ߚ‫ޕ‬ ࿑ 12 b)ߦ㧘⥄ὼ᡼㔚㧘ᒝ೙᡼㔚㧘ᕆㅦᒝ೙᡼㔚ߩ 3 ࡄ⫾Ⓧࠛࡀ࡞ࠡ࡯ࠍ᡼಴ߔࠆߎߣ߇ߢ߈ࠆ‫ޕ‬ ߥ߅㧘੹ᓟ㧘ല₸ߩ᷹ቯ߿ታ㓙ߩࠢࠛࡦ࠴ᤨߩ✕ᕆ᡼㔚⹜㛎ߥߤࠍⴕ߁ߎߣ߇ᔅⷐߣᕁࠊࠇࠆ‫ޕ‬࠲࡯ࡦߩ᡼㔚⹜㛎ߩ⁁ᴫࠍᲧセߒߚ߽ߩࠍ␜ߔ‫ޕ‬ෳ⠨ᢥ₂(1) RyoKawanamiandTakeshiIshigohka,“LowTemperature Characteristics of MOSFET Targeting
Low-Voltage

High-Current

PowerSourceforSuperconducting Magnets”, IEEE Transactions onApplied Superconductivity, Vol.16, No.2, pp.1630-1633,
June 2006.

(2) S. Fukano, T. Ishigohka, Y. Kondo, A. Ninomiya, R.

Kawanami, “Cryogenic Low-Voltage/ High-Current DC
PowerSource

using

Multi-Parallel-Connected

MOSFETs”, Presented at 20 International Conferencethon Magnet Technology, Philadelphia., Aug. 27-31, 2007.

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