Area1 International Symposium on Nitride Semiconductors (CIRFE Symposium)
11/5 10:15 10:45 Invited Tomoyosh Mishima

11/6

10:45 11:00

1218

ShunLu11:00 11:15

1026

NaokiInoue

11:15 11:30

1176

SusumuSasaki

11:30 11:45

1080

AkihiroShimada11:45 12:00

1115

TakumaDoi

High Breakdown Voltage Vertical-Structure GaN p-n
Junction Diodes
Reduction of Specific Contact Resistance on p-type GaN
by Thermal Annealed Mg Layer
First-principles Calculations between Screw Dislocation
with Mg, H Impurities on GaN
Direct Observation of Spontaneous Polarization inFreestanding GaN Substrate
Operando Measurement of Local Piezoelectric Lattice
Strain in AlGaN/GaN HEMT Devices by Synchrotron
Schottky barrier height lowering for metal/n-type 4H-SiC
contacts using low work function metals

15:00 15:30 Invited Yutaka

MikawaAcidic Ammonothermal Growth of Bulk GaN

15:30 15:45

1003

MarkusPristovsek

AlPN on GaN: A new member of the III-Nitride family

15:45 16:00

1133

Hiroki

ShimizuHigh fracture toughness aluminum nitride (AlN) by AlNwhiskers addition and tape-cast

16:00 16:15

1143

ZhengYe

Comparative Analysis of Decomposition of TMGa and TEGa
for the Clarification of the Mechanism of Unintentional
Carbon Incorporation in GaN MOVPE

16:30 17:00 Invited Filip

TuomistoAnalyzing the electrical activity of cation and nitrogenvacancies in AlGaN and AlGaN/GaN interfaces

17:00 17:15

1082

Kieu My

Bui

17:15 17:30

1163

ToruAkiyama

17:30 17:45

1160

AkiraKusaba

A Computational Approach of Epitaxial Growth of Gallium
NitrideDirect approach for calculating individual energy of stepedges on polar AlN(0001) and GaN(0001) surfaces using
density functional calculations
Tuning of Reaction Rate Constants for Trimethylgallium
Decomposition by Multiobjective Genetic Algorithm withHigh-Resolution Mass Spectrometry Data

17:45 18:00

1159

Yoshihiro Kangawa

9:00 10:00 Plenary Chris G.

Van de Walle

10:00 11:00 Plenary Tomás

Palacios

11:15 11:30

1215

Masahiro Horita

11:30 11:45

1190

MeguruEndo

11:45 12:00

1210

Kensuke

Sumida12:00 12:15

1107

Ryosuke

Sakurai

Theoretical approach to unintentional oxygen doping during
MOVPE of GaN:Mg and AlN:Mg

Exploring (and exploiting) the physics of ultra-wide-bandgapnitrides
New Semiconductor Materials: The Critical Infrastructure toBuild the Future
Investigation of Electron Traps in Homoepitaxial n-type GaN
Grown by MOVPE
Nitrogen-displacement-related Hole Traps in N-type GaN
with Electron Beam Irradiations in the Energy Range from100 to 400 keV
Isothermal Annealing Study on Mg-implanted Homoepitaxial
GaN
First Principles Studies on Atomic and Electronic
Structures of VGa-VN divacancies.

11/6 13:30 14:00

Inited Masayoshi Yamamoto

14:00 14:30

Inited Kazuhiro Umetani

14:30 14:45

1058

SihoonChoi

14:45 15:00

1189

DaisukeArai

15:15 15:45

Inited SatoshiKamiyama

15:45 16:15 Invied ÅsaHaglund

16:15 16:30

1028

Kengo

Nagata16:30 16:45

1061

TaichiMatsubara

16:45 17:00

1209

PietroPampili

1173

Keito

Aoshima1180

TakuyaNakashima

1213

WentaoCai

1152

ToshikiAchiwa1188

Haruki

Hirasawa

SiC/GaN Hybrid Soft Switching Inverter for Electric Vehicle
Applications
Parasitic Inductance Design for High-Power Gallium Nitride
Field-Effect Transistors
Feasibility Analysis of Designing Coupled Inductors Using
Powder Core in Multiphase Converter
The Switching Characteristics of Cascode Connected GaNPSJ-FET
Room-temperature operation of nitride-based multiquantum shell (MQS)/nanowire lasers
Membrane-Based Light-emitters from the Blue to theUltraviolet Wavelength Regime byElectrochemical Etching
Sputtered polycrystalline MgZnO as transparent electrode inAlGaN-based <br>homojunction tunnel junction deep
Nitrogen-polar GaN and AlN templates for light detection
application

11/5 13:30 14:30 Poster
Hole traps formed by gamma-ray irradiation in homoepitaxial
p-type GaNTime evolution of crystallographic defects in Mg ionimplanted GaN during annelingHigh In-content InGaN Platelet as Underlayer for LightEmitting Diodes toward Long Wavelength Application
Investigation of High Frequency and High Voltage Inverterwith GaN-HEMT/SiC-JFET Cascode Device"A Study of UV-LEDs Driving Curcuit Including Degration
Detection of UV-LEDs and Curcuit"