PCOS 2012 TECHNICAL PROGRAM
November 29 (Thursday), 2012
12:45 – 12:50

Opening Remarks

Symposium Co-chair, Suzuki, Hiroyasu (Pulstec Industrial Co., Ltd.)

12:50 – 12:55

Opening Speech

General Chair, Yamada, N. (Kyoto University)

Session 1. Presiders:

Yamada, N (Kyoto University),
Kuwahara, M (National Institute of Advanced Science and Technology)

12:55 –13:05 (Special)
A01. The Great Father of Phase Change Memory, Stanford R. Ovshinsky
Ohta, T.
Ovonic Phase Change Institute
13:05 – 15:45 (Invited)
A02. Dynamical study of photoinduced structural phase transitions
Tanimura, K.
The Institute of Scientific and Industrial Research, Osaka University
13:45 – 14:25 (Invited)
A03. Development of Thermophotovoltaic Generation of Electricity
using Spectral-Controlled Near-Field Thermal Radiation
Hanamura, K.
Tokyo Institute of Technology
14:25 – 15:05(Invited)
A04. Developments of optical-functional materials by chemical synthesis methods
Ohkoshi, S. 1,2
1 Department of Chemistry, School of Science, The University of Tokyo
2 CREST, JST

15:05 – 15:20 Coffee BreakSession 2. Presiders:Irie, Mitsuru (Osaka Sangyo University),Fuji, Y (Elpida Memory, Inc.)

15:20 – 16:00(Invited)
A05. Scalable High Performance PRAM for Storage Class MemoryHorii, H., Park, J.H., Han, S.M., Kim, D.H., Jung, S.W., Wu, Z., Ahn, J.K., Park, Y.W.,
Kim, J.U., Cho, S.L., Ahn, D.H., Lee, J.M., Nam, S.W., Kang, H.K. and Chung, C.H.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.

i

16:00 – 16:25
A06. Current-driven crystallization promotion for multilevel storage in phase-change memory
Yin, Y., Alip, R. I., and Hosaka, S.
Graduate Sch. of Eng., Gunma University
16:25 – 16:50
A07. Hybrid Memory Architecture of PCM and NAND flash memories for Enterprise Storage
Takeuchi, K.
Department of Electrical, Electronic and Communication Engineering, Chuo University

Poster Session
P1.

First-principles calculation of the band structures and the electronic statesof λ-Ti3O5 and β-Ti3O5
Tanaka, K.1, Toshiaki Nagata, T.1, Nasu, T.1, Hakoe, F.1, Namai, A.1,Tokoro, H.1,2, and Ohkoshi, S.1,3
1 Department of Chemistry, School of Science, The University of Tokyo
2 NEXT, JSPS
3 CREST, JSTP2.

Synthesis methods of a photo-induced phase transition material of λ-Ti3O5
Nasu, T.1, Tanaka, K.1, Hakoe, F.1, Namai, A.1, Tokoro, H.1,2, and Ohkoshi, S.1,3
1 Department of Chemistry School of Science, the University of Tokyo
2 NEXT, JSPS
3 CREST, JSTP3. Study of the reversible durability of photo-induced phase transition on
Hakoe, F.1, Umeta, Y.1, Nagata, T.1, Tanaka, K.1, Nasu, T.1,Namai, A.1, Tokoro, H.1,2, and Ohkoshi, S.1,3
1 Department of Chemistry School of Science, the University of Tokyo
2 NEXT, JSPS
3 CREST, JSTP4.

Optical properties of λ-Ti3O5 exhibiting a room-temperature
photoreversible phase transition
Nagata, T.1, Tanaka, K.1, Nasu, T.1, Hakoe, F.1, Namai, A.1,Tokoro, H.1,2, and Ohkoshi, S.1,3
1Department of Chemistry School of Science, the University of Tokyo
2 NEXT, JSPS
3CREST, JSTii

λ-Ti3O5P5. Effect of TiN Underlayer for Fabricating Interfacial Phase Change Memories
Shintani, S., Morikawa, T.*, and Odaka, T.
Collaborative Research Team Green Nanoelectronics Center,National Institute of Advanced Industrial

Science and Technology

P6. Mach Zehnder Interferometer Optical Switch Using Phase-Change MaterialJain, P.1, Tanaka, D.1, Tsuda, H.1, Kuwahara, M.2, Wang, X.2, and Kawashima, H.2
1 Department of Electronics and Electrical Engineering, Keio University
2 National Institute of Advanced Industrial Science and Technology

P7. Switching property of localized surface plasmon resonance of gold nanoparticles
on a GeSbTe phase change thin film
Homma, T., Hira, T., and Saiki, T.
Graduate School of Science and Technology, Keio University
P8.

Neuronal functionality obtained by localized surface plasmon resonancewith phase change material
Uchiyama, T., Kuroki, M., and Saiki, T.
Graduate School of Science and Technology, Keio University

P9. Spatially inhomogeneous stress impression on semiconductor quantum dotsusing volume expansion of phase change material
Takahashi, M., Nurrul Syafawati Humam, Tsumori, N., and Saiki, T.
Graduate School of Science and Technology, Keio University
P10. Micro-Raman study of amorphous GeSbTe recording marks
induced by femtosecond laser pulse excitation
Kitamura, N., Katsumata, Y., Morita, T., Hira, T., and Saiki, T.
Graduate School of Science and Technology, Keio University
P11.

Optical anisotropy in a GeSbTe thin film induced by amorphization
with femtosecond laser pulse excitation
Katsumata, Y., Kitamura, N., Morita, T., and Saiki, T.
Graduate School of Science and Technology, Keio University

P12. Study of CVD process of GeSbTe by first principles calculations
Ichikawa, K., Senami, M., Ikeda, Y., Nozaki, H., and Tachibana, A.
Department of Micro Engineering, Kyoto Universityiii

P13.

Density measurement of Ge2Sb2Te5 as a function of temperature
Yokoyama, Y. 1, Endo, R. 1, Kuwahara, M.2, Kobayashi, Y. 1, and Susa, M. 1
1 Dept of Metallurgy and Ceramics Science, Tokyo Institute of Technology
2 Electronics and Photonics Research Institute, National Institute of Advanced Industrial

Science and Technology
P14. Reliability evaluation items for Archival Storage in BDIrie, M.1, Okino, Y.2, and Kubo, T.3
1 Faculty of Engineering, Osaka Sangyo Univ.
2 High Tech Research Center, Kansai Univ.
3 T. KUBO Eng. Sci. OfficeP15.

High Density NAND Phase Change Memory with Block-Erase Architecture
and Investigations for Write and Disturb Requirements
Johguchi, K.1, Yoshioka, K.2, and Takeuchi, K.1
1 Department of Electrical, Electronic, and Communication Engineering, Chuo University
2 Graduate School of Engineering, University of Tokyo

Reception
19:10 – 21:10iv

November 30 (Friday), 2012
Session 3. Presiders:Yusu, K.( New Energy and Industrial Technology Development Organization),
Ogino, Y. (Hitachi Computer Peripherals Company Ltd.)

9:00 – 9:40 (Invited)
A08. High resolution live cell imaging with electron-beam assisted(EXA) optical microscopy
Kawata, T.1,3, Nawa, Y.1, and Inami, W.2,3
1 Shizuoka University, Faculty of Engineering
2 Shizuoka University, Global Research Leaders
3 JST, CREST
9:40 – 10:20 (Invited)
A09. Anomalous X-ray scattering reveals the role of constituent elements in Ge2Sb2Te5
Kohara, S.1, Ohara, K.1, Temleitner, L.1, 2, Sugimoto, K.1, Matsunaga, T.3, Pusztai, L.2
Itou, M.1, Ohsumi, H.4, Kojima, R.3, Yamada, N.3, Usuki, T.5, Fujiwara, A.1 and Takata, M.1,4
1 JASRI/ SPring-8
2 Wigner Research Centre for Physics, Hungarian Academy of Sciences (Hungary)
3 Panasonic Corporation
4 RIKEN
5 Department of Material and Biological Chemistry, Faculty of Science, Yamagata University

10:20 – 10:40 Coffee BreakSession 4. Presiders:

Kojima, R.(Panasonic Corp.),
Kurokawa, K. (Sony Corp.)

10:40 – 11:05
A10. A study on phase change characteristics of Ge-Cu-Te ternary alloy thin films
Sutou, Y., Saito, Y., and Koike, J.
Department of Materials Science, Graduate School of Engineering, Tohoku University
11:05 – 11:30
A11. Low-Power Switching in Phase-Change Memory using New Superlattice :SnTe/Sb2Te3 System
Soeya, S., Odaka, T., Morikawa, T., Shintani, T., and Tominaga, J
Collaborative Research Team Green Nanoelectronics Center,
National Institute of Advanced Industrial Science and Technology
11:30 – 11:55
A12. Crystallization properties of Ge-Sb and Ge-Bi-Te nanoparticles by pulsed laser irradiation
Mihara, T., Tsuchino, A., Sato, S., Hisada, K., Kojima, R., Yamada, N., and Furumiya, S.
Advanced Technology Research Laboratories, Panasonic Corporationv

11:55 – 12:20
A13. Magnetic Properties and Band Structures in Superlattice Phase-change Memory
Tominaga, J. 1, Kolobov, A.V. 1, and Fons, P. 1
1 Green Nanoelectronics Center, Nanoelectronics Research Institute,
National Institute of Advanced Industrial Science and Technology

12:20 – 13:50 Photo and Lunch

Session 5. Presiders:Yuzurihara, H.(Richo Company Ltd.)Fuji, Y (Elpida Memory, Inc.)

13:50 – 14:15
A14. Self-holding optical switch using phase-change material
for energy efficient photonic network
Tsuda, H.1, Tanaka, D.1, Kuwahara, M.2, Wang, X.2, and Kawashima, H.2
1 Graduate School of Science and Technology, Keio University
2 National Institute of Advanced Industrial Science and Technology
14:15 – 14:40
A15. Ultrafast dynamics of coherent phonons in phase change materials:
Evaluation of thermal conductivity
Hase, M.1, and Tominaga, J.2
1 Institute of Applied Physics, University of Tsukuba
2 Nanoelectronics Research institute,
National Institute of Advanced Industrial Science and Technology
14:40 – 15:05
A16. Ultrafast nanoscale optical properties of phase change materials
and its possible applications to neuron-inspired devices
Saiki, T.
Department of Electronics and Electrical Engineering, Keio University

15:05 – 15:25 Coffee BreakSession 6. Presiders:

Shintani, T. (National Institute of Advanced Science and Technology)
Suzuki, H. (Pulstec Industrial Co., Ltd.)

15:25 – 15:50
A17. Role of antimony in structure and properties of the layered CeTe-Sb2Te3 memory alloys
Kolobov, A.V., Fons, P., and Tominaga, J.
National Institute of Advanced Industrial Science and Technology
15:50 – 16:15
A18. High Speed Crystal Growth in Phase-change Recording Materials for Practical Use
Matsunaga, T. 1, Kojima, R. 2, Yamada, N. 3, Kifune, K. 4 , Kubota, Y. 5, and Kohara, S. 6vi1 Device Solutions Center, R&D Division, Panasonic Corporation
2 AVC Networks Company, Panasonic Corporation
3 Department of Materials Science & Engineering, Kyoto University
4 Faculty of Liberal Arts and Sciences, Osaka Prefecture University
5 Graduate School of Science, Osaka Prefecture University
6 Japan Synchrotron Radiation Research Institute/SPring-8

16:15 – 16:40
A19. Study of GeCu2Te3 by Hard X-ray Photoelectron Spectroscopy
Kobayashi, K.1,2, Kobata, M.1,3, Saito, Y.4, Sutou, Y.4, and Koike, J.4
1Condenced Matter Science Devision, Japan Atomic Energy Agency
2Hiroshima Synchrotron Radiation Center, Hiroshima University3VG Scienta. Blue Building 4F
4Department of Materials Science, Graduate School of Engineering, Tohoku University

16:40 – 17:05
A20. Searching for Disorder in OrderFons, P.1,2 , Kolobov, A.1'2, Richter, J.1, Matsunaga, T.3, Yamada, N.4, and Tominaga, J. 1
1 National Institute of Advanced Science and Technology
2 SPring-8, Japan Synchrotron Radiation Institute (JASRI)
3 Materials Science and Analysis Technology Center, Panasonic Corporation
4 Digital & Network Technology Development Center, Panasonic Corporation
17:05 – 17:15

Best Paper Awarding

General Chair, Dr. N. Yamada (Kyoto University)

17:15 – 17:20

Closing Remarks

M. Kuwahara(National Institute of Advanced Industrial Science and Technology)viiviii