PCOS2011 Program
November 17
13:00 – 13:05

H. Yuzurihara (Ricoh Company, Ltd.)
Opening Remarks

13:05 – 13:10

N. Yamada (Panasonic Corp.)
Opening Speech

Session 1
13:10 – 13:30

M. Okuda (Okuda Technical Office)<Special> 相変化記録研究会から Phase Change Oriented Science へ

13:30 – 14:10

M. Wuttig (RWTH Aachen University of Technology)<Invited> Phase Change Materials: The Importance of Resonance Bonding andDisorder

14:10 – 14:35

T. Matsunaga (Panasonic)
Structural investigation for a-AIST clarify the difference between the two types ofcontrastive phase-change mechanisms

14:35 – 15:00

P. Fons (National Institute of Advanced Industrial Science and Technology)
Simultaneous Measurements of Short and Long-range order in GeTe

15:00 – 15:25

R. Lan (Tokyo Institute of Technology)
Thermal Conductivities of Phase Change Material Sb-Te Alloys in solid states

Coffee BreakSession 2
15:45 – 16:25

M. Hase (Tsukuba University)<Invited> Ultrafast dynamics of phase change in Ge-Sb-Te materials studied bycoherent phonon spectroscopy

16:25 – 17:05

J. Tominaga (National Institute of Advanced Industrial Science and Technology)<Invited> Magnetic properties of phase-change films hidden in the structures

17:05 – 17:30Y. Sutou (Tohoku University)
Ge-Cu-Te films for phase change random access memory

17:30 – 17:55

H. Tokoro (University of Tokyo)
ThermodynamicStudy

Semiconductor Transitionon

-Ti3O5

Exhibiting

aLight-induced

Metal-Novermber 18
Session 3
9:00 – 9:40

K. Miyazaki (Kyushu Institute of Technology)<Invited> Enhancement of Thermoelectric Performance by using nano-structures

9:40 – 10:05

K. Tajima (Keio University)
Crystallization behavior of GeSbTe nonthermally amorphized by femtosecond laser
pulse irradiation

10:05 – 10:30

K. Hira (Keio University)
GeSbTe 薄膜上の金ナノ粒子における巨大局在表面プラズモン共鳴スイッチ
ング

Coffee Break
10:50 – 11:15

M. Takahashi (Keio University)
Local Control of energy structure of semiconductor quantum dots using phasechange material

11:15 – 11:40

T. Toyosaki (Keio University)
Repetitive Switching of Optical Gate Switch Using Phase-Change Material and Si
Waveguide

Photo and Lunch

Session 4
13:30 – 14:10

T. Tsuruoka (National Institute for Materials Science)<Invited> Atomic switch: Development of resistive switching memories based on
nanoscale migration of cations in oxide thin films

14:10 – 14:35

Y. Sasago (Hitachi, Ltd.)Thin-film lateral phase-change memory driven by poly-Si MOS transistor enabling
both low cost and high-programming gigabyte-per-second throughput

14:35 – 15:00

S. Hosaka (Gunma University)
Random access multi-levels phase changing using pulse modulation

Coffee BreakSession 5

15:20 – 15:45

H. Machida (Gas-phase Growth Ltd.)
Verification of GeSbTe composition in the high aspect hole filled by ChemicalVapor Deposition

15:45 – 16:10

A. Tachibana (Kyoto University)
First principles calculations for growth condition for CVD process of GeSbTe

16:10 – 16:35

J. Richter (National Institute of Advanced Industrial Science and Technology)
An in situ phase-change memory cell study using nanometer scale x-ray optics

16:35 – 17:00

T. Odaka (National Institute of Advanced Industrial Science and Technology)
AFM study for Electric Characteristics of Phase-Change Superlattice Film

17:10 – 17:15

N. Yamada (Panasonic Corp.)
Best Paper Awarding

17:15 – 17:20

Y. Ogino (Hitachi Computer Peripherals Co., Ltd.)
Closing Remarks