October 9, 2013
Conclusion of a Joint Research Contract with the Nagoya Institute of Technology
Taiyo Nippon Sanso Corporation (TNSC) has concluded a joint research contractwith the Nagoya Institute of Technology on October 1, 2013 for “Research into crystal
growth technique to fabricate gallium nitride (GaN) film on large diameter silicon (Si)substrates and technologies for device evaluation.”
This joint research will be carried out using the Metal Organic Chemical Vapor
Deposition (MOCVD) equipment TNSC delivered to the Innovation Center for
Multi-Business Nitride Semiconductors at the Nagoya Institute of Technology.

1. The Innovation Center for Multi-Business Nitride Semiconductors at the Nagoya
Institute of Technology
The Innovation Center for Multi-Business of Nitride Semiconductors was launchedand a lavish opening ceremony was held on September 1 st and 20th respectively. The
Innovation Center is a base for promoting research and development aimed at theapplication and commercialization of nitride semiconductor power devices. At thecore of these devices is the “crystal growth technique to fabricate GaN film on Sisubstrate” which was developed by Professor Takashi Egawa and his collaborators atthe Nagoya Institute of Technology, the leader in the field of GaN-based electronic
device research.
In the Innovation Center, industry, academia, and government collaborate topromote research and development projects with an “under one roof” format. Many
domestic companies involved in equipment, materials, and devices, etc. areparticipating in the Innovation Center, and TNSC is responsible for the evaluation ofvapor deposition process properties using MOCVD equipment.
[Innovation Center for Multi-Business Nitride Semiconductors]
Address: Gokiso-cho, Showa-ku, Nagoya, Aichi, 466-8555 Japan
Participating organizations: 12 operations including Taiyo Nippon Sanso
Corporation, and one public research institution

2. Overview of the joint research• The Nagoya Institute of Technology and TNSC have been engaged in joint research
into technologies for crystal growth technique to fabricate GaN film on Si substratesince 2011.
• In the previous joint research we mainly worked with Si substrates in four-inch andsix-inch sizes but due to the opportunity provided by the founding of the Innovation
Center we will be able to expand our research by focusing on mass production usingeight-inch substrates.
• Using the equipment owned by the Innovation Center, the only equipment in theworld which can handle test production of eight-inch GaN electronic devices(including post-processing), makes pilot production and verification of devices
possible.
3. The plan of TNSC going forward
Through this joint research and the projects at the Innovation Center, we willaccumulate data related to mass-produced MOCVD equipment, and aim to expand themarket for MOCVD equipment, adding power device manufacturing applications tothe conventional LED manufacturing applications, by gathering market informationand deepening our relationships with the participating companies.

The MOCVD equipment made by TNSC (and installed in the Innovation Center) usedin the joint research with world’s largest processing capacity (yield rate of six
eight-inch substrates)