Single P-channel MOSFET
ELM43401CA-S

http://www.elm-tech.com■General description■Features

ELM43401CA-S uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=-30V• Id=-4.3A• Rds(on) = 65mΩ (Vgs=-10V)• Rds(on) = 75mΩ (Vgs=-4.5V)• Rds(on) = 100mΩ (Vgs=-2.5V)■Maximum absolute ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

VdsVgs
Ta=25°C
Ta=70°C

Continuous drain current

IdPulsed drain current

IdmTc=25°C
Tc=70°C

Power dissipation
Storage temperature range
Operating junction temperature range

Ta=25°C. Unless otherwise noted.
Limit
Unit
Note-30±12V
V-4.3-3.6-20

AA

23Pd

1.4
0.9

W

Tstg
Tj

-55 to 150-55 to 150°C°C■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

Symbolt ≤ 10s

Rθja■Pin configuration

Typ.
-Max.
85
125

12

Note
11

■Circuit

SOT-23(TOP VIEW)
3

Unit°C/W°C/W

DPin No.
12

Pin name
GATESOURCE3DRAIN

GS

Rev.1.1
1/4

Single P-channel MOSFET
ELM43401CA-S

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=-250μA

Zero gate voltage drain current

Idss

Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance-30

V

Vds=-24V, Vgs=0V
Vds=-24V, Vgs=0V, Ta=55°C

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA-0.45-1-5μA

±100
-1.20

nAV

Vgs=-10V, Id=-3.0A

5565

Rds(on) Vgs=-4.5V, Id=-3.0A
Vgs=-2.5V, Id=-2.0A

658575100mΩ

2SVA

21, 4Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERSGfs
VsdIs

Vds=-5V, Id=-3.0A
Is=-1A, Vgs=0V
Vgs=Vds=0V, Force Current

5.6

Input capacitance
Output capacitance

Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz92073

pF
pF

Reverse transfer capacitance
SWITCHING PARAMETERSTotal gate charge (-4.5V)

Crss71pF

11.9nC

Gate-source charge

Qgs

1.8nC

Gate-drain charge
Turn-on delay time

Qgdtd(on)

3.0
6.6

nC
ns

Turn-on rise timetr
Vgs=-4.5V, Vds=-15V
td(off) Id=-3.0A, Rgen=3.3Ω

27.8
46.2

nsns

20.6

ns

Turn-off delay timeTurn-off fall time

Qg

Vgs=-4.5V, Vds=-15V
Id=-3.0A

tf-1.2-4.3

NOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.1
2/4

Single P-channel MOSFET
ELM43401CA-S
FETek Technology Corp.

■Typical electrical and thermal characteristics

FKUC3601

http://www.elm-tech.com
P-Ch 30V Fast Switching MOSFETs

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs. G-S Voltage

Fig.3 Source Drain Forward Characteristics

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3

Rev.1.1
3/4

Single P-channel MOSFETFKUC3601

ELM43401CA-S

http://www.elm-tech.com
P-Ch 30V Fast Switching MOSFETs

FETek Technology Corp.

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (R θJA)

1
DUTY=0.5
0.2
0.1

0.1
0.05
0.02

0.01

0.01

0.001

SINGLE PULSEPDM

TONT

D = TON/T
TJpeak = TC + PDM x RθJC

0.00010.0001

0.001

0.01

0.1

1

101001000t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform

Fig.11 Gate Charge Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.1
4/4