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Application Note

Selecting the Correct Texas Instruments Signal Switch

ABSTRACT
Texas Instruments offers a wide variety of switches and multiplexers supporting a variety of configuration,
voltage, bandwidth, and package needs. This application note summarizes the key features and performance
characteristics of our analog signal switches and application considerations for choosing the appropriate TI
signal switch.

Table of Contents
1 Introduction.............................................................................................................................................................................4
1.1 Ideal Versus Non-Ideal Switch........................................................................................................................................... 4
2 Basic Signal Switch Structure...............................................................................................................................................6
2.1 NFET Switch...................................................................................................................................................................... 6
2.2 Transmission Gate Switch..................................................................................................................................................6
2.3 NFET With Charge Pump.................................................................................................................................................. 7
3 Analog Versus Digital Signal Switches................................................................................................................................ 9
3.1 Bidirectional Switches........................................................................................................................................................ 9
3.2 Configuration and Channels...............................................................................................................................................94 Signal Switch Specifications and Features........................................................................................................................10
5 Texas Instruments Analog Signal Switches and Multiplexers Portfolio..........................................................................17
5.1 Precision Switches and Multiplexers................................................................................................................................17
5.2 Protection Switches and Multiplexers.............................................................................................................................. 17
5.3 General Purpose Switches and Multiplexers................................................................................................................... 22
5.4 Automotive Switches and Multiplexers.............................................................................................................................23
6 Switches and Multiplexers Performance in Digital Signal Applications......................................................................... 24
7 Applications.......................................................................................................................................................................... 25
7.1 SPI Multiplexing............................................................................................................................................................... 25
7.2 Multiplexing Signals to External ADC...............................................................................................................................26
7.3 Multiplexing Signals to External ADC in Fault Sensitive Conditions................................................................................ 27
7.4 Switchable Op Amp Gain Setting.....................................................................................................................................27
7.5 Multiplexing Body Control Module (BCM) Inputs............................................................................................................. 28
7.6 High Current Range Selection Using External Resistor...................................................................................................29
7.7 Fault Protection in Factory Automation Control Systems.................................................................................................29
7.8 Sample and Hold Circuitry............................................................................................................................................... 30
8 Summary............................................................................................................................................................................... 31
9 Revision History................................................................................................................................................................... 31
A Appendix A........................................................................................................................................................................... 32
A.1 Analog Performance – CD, HC, CBT, LVC, and LV......................................................................................................... 32
A.2 SN74CBT Characteristics................................................................................................................................................34
A.3 CD74HCT Characteristics................................................................................................................................................35
A.4 CD74HC Characteristics..................................................................................................................................................36
A.5 SN74HC Characteristics..................................................................................................................................................39
A.6 CD4066B Characteristics................................................................................................................................................ 42
A.7 LV-A Characteristics.........................................................................................................................................................46
A.8 LVC Characteristics......................................................................................................................................................... 50
A.9 CBTLV Characteristics.....................................................................................................................................................54

List of Figures
Figure 1-1. Ideal Switch............................................................................................................................................................... 4
Figure 1-2. Behavioral Model of CMOS (FET) Switch................................................................................................................. 4
Figure 2-1. N-channel FET Switch...............................................................................................................................................6
Figure 2-2. On-State Resistance vs Lowest I/O Voltage for an N-channel FET Switch With VCC = 5 V..................................... 6
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Figure 2-3. Parallel N-/P-Channel FET (Transmission Gate) Switch...........................................................................................7
Figure 2-4. On-State Resistance vs Input Voltage for a Parallel n-/p-Channel FET Switch........................................................ 7
Figure 2-5. Basic Structure of an NMOS Series Switch With the Charge Pump......................................................................... 8
Figure 3-1. Bidirectional Signal Path........................................................................................................................................... 9
Figure 4-1. Logic Thresholds..................................................................................................................................................... 10
Figure 4-2. On-Resistance......................................................................................................................................................... 11
Figure 4-3. Source and Drain Off Capacitance.......................................................................................................................... 11
Figure 4-4. Source and Drain On Capacitance..........................................................................................................................12
Figure 4-5. Bandwidth................................................................................................................................................................12
Figure 4-6. Channel-to-Channel Crosstalk................................................................................................................................ 12
Figure 4-7. Charge Injection...................................................................................................................................................... 13
Figure 4-8. Off-Isolation............................................................................................................................................................. 13
Figure 4-9. ON Leakage Current............................................................................................................................................... 14
Figure 4-10. OFF Leakage Current........................................................................................................................................... 14
Figure 4-11. Break-Before-Make Time (tBBM)............................................................................................................................ 14
Figure 4-12. Turn-ON (tON) and Turn-OFF (tOFF) Time..............................................................................................................15
Figure 4-13. Fail-Safe Logic...................................................................................................................................................... 16
Figure 5-1. Powered-off Protection............................................................................................................................................ 18
Figure 5-2. Overvoltage Protection Threshold...........................................................................................................................18
Figure 5-3. TMUX1072 Overvoltage Protection Waveform....................................................................................................... 19
Figure 5-4. Undervoltage Protection Threshold.........................................................................................................................20
Figure 7-1. Multiplexing Flash Memory......................................................................................................................................25
Figure 7-2. Isolation of JTAG, SPI, and GPIO Signals...............................................................................................................25
Figure 7-3. Multiplexing Signals to External ADC......................................................................................................................26
Figure 7-4. Multiplexing Signals to External ADC in Fault Sensitive Conditions....................................................................... 27
Figure 7-5. Switchable Op Amp Gain Setting............................................................................................................................ 27
Figure 7-6. Multiplexing BCM Inputs..........................................................................................................................................28
Figure 7-7. High Current Range Selection Using External Resistor.......................................................................................... 29
Figure 7-8. Fault Protection in Factory Automation Control Systems........................................................................................30
Figure 7-9. A Sample and Hold Circuit Realized Using the TMUX611x Analog Switch.............................................................30
Figure A-1. Log ron vs VI, VCC = 5 V (SN74CBT3125)...............................................................................................................34
Figure A-2. ron vs VI, VCC = 5 V (SN74CBT3125)......................................................................................................................34
Figure A-3. VI vs VO, VCC = 5 V (SN74CBT3125)..................................................................................................................... 35
Figure A-4. VI vs VO, VCC = 5 V (CD74HCT4066)..................................................................................................................... 35
Figure A-5. ron vs VI, VCC = 5 V (CD74HCT4066)..................................................................................................................... 36
Figure A-6. VI vs VO, VCC = 4.5 V (CD74HC4066).................................................................................................................... 36
Figure A-7. ron vs VI, VCC = 4.5 V (CD74HC4066).....................................................................................................................37
Figure A-8. VO vs VI, VCC = 6 V (CD74HC4066)....................................................................................................................... 37
Figure A-9. ron vs VI, VCC = 6 V (CD74HC4066)........................................................................................................................38
Figure A-10. VO vs VI, VCC = 9 V (CD74HC4066)..................................................................................................................... 38
Figure A-11. ron vs VI, VCC = 9 V (CD74HC4066)......................................................................................................................39
Figure A-12. VO vs VI, VCC = 2 V (SN74HC4066)..................................................................................................................... 39
Figure A-13. ron vs VI, VCC = 2 V (SN74HC4066)......................................................................................................................40
Figure A-14. VO vs VI, VCC = 4.5 V (SN74HC4066).................................................................................................................. 40
Figure A-15. ron vs VI, VCC = 4.5 V (SN74HC4066)...................................................................................................................41
Figure A-16. VO vs VI, VCC = 6 V (SN74HC4066)..................................................................................................................... 41
Figure A-17. ron vs VI, VCC = 6 V (SN74HC4066)......................................................................................................................42
Figure A-18. VO vs VI, VCC = 5 V (CD4066B)............................................................................................................................ 42
Figure A-19. ron vs VI, VCC = 5 V (CD4066B)............................................................................................................................ 43
Figure A-20. VO vs VI, VCC = 10 V (CD4066B).......................................................................................................................... 43
Figure A-21. ron vs VI, VCC = 10 V (CD4066B).......................................................................................................................... 44
Figure A-22. VO vs VI, VCC = 15 V (CD4066B).......................................................................................................................... 44
Figure A-23. ron vs VI, VCC = 15 V (CD4066B).......................................................................................................................... 45
Figure A-24. VO vs VI, VCC = 2 V (SN74LV4066A).................................................................................................................... 46
Figure A-25. ron vs VI, VCC = 2 V (SN74LV4066A).................................................................................................................... 46
Figure A-26. VO vs VI, VCC = 2.5 V (SN74LV4066A)................................................................................................................. 47
Figure A-27. ron vs VI, VCC = 2.5 V (SN74LV4066A)................................................................................................................. 47
Figure A-28. VO vs VI, VCC = 3.3 V (SN74LV4066A)................................................................................................................. 48
Figure A-29. ron vs VI, VCC = 3.3 V (SN74LV4066A)................................................................................................................. 48
Figure A-30. VO vs VI, VCC = 5 V (SN74LV4066A).................................................................................................................... 49
Figure A-31. ron vs VI, VCC = 5 V (SN74LV4066A).................................................................................................................... 49
Figure A-32. VO vs VI, VCC = 1.8 V (SN74LVC1G66)................................................................................................................ 50
Figure A-33. ron vs VI, VCC = 1.8 V (SN74LVC1G66)................................................................................................................ 50
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Figure A-34. VO vs VI, VCC = 2.5 V (SN74LVC1G66)................................................................................................................ 51
Figure A-35. ron vs VI, VCC = 2.5 V (SN74LVC1G66)................................................................................................................ 51
Figure A-36. VO vs VI, VCC = 3.3 V (SN74LVC1G66)................................................................................................................ 52
Figure A-37. ron vs VI, VCC = 3.3 V (SN74LVC1G66)................................................................................................................ 52
Figure A-38. VO vs VI, VCC = 5 V (SN74LVC1G66)................................................................................................................... 53
Figure A-39. ron vs VI, VCC = 5 V (SN74LVC1G66)................................................................................................................... 53
Figure A-40. VO vs VI, VCC = 2.5 V (SN74CBTLV3125)............................................................................................................ 54
Figure A-41. ron vs VI, VCC = 2.5 V (SN74 CBTLV3125)............................................................................................................54
Figure A-42. VO vs VI, VCC = 3.3 V (SN74CBTLV3125)............................................................................................................ 55
Figure A-43. ron vs VI, VCC = 3.3 V (SN74CBTLV3125).............................................................................................................55

List of Tables
Table 3-1. Configurations and Channels......................................................................................................................................9
Table 5-1. Analog Precision Switches and Multiplexers............................................................................................................ 17
Table 5-2. Analog Protection Switches and Multiplexers........................................................................................................... 21
Table 5-3. General-Purpose Switches and Multiplexers............................................................................................................ 22
Table 5-4. Automotive Switches and Multiplexers – AECQ100................................................................................................. 23
Table 6-1. Summary of Digital Performance ............................................................................................................................. 24
Table A-1. VCC Above 5.5 V ......................................................................................................................................................32
Table A-2. VCC = 4.5 V ..............................................................................................................................................................32
Table A-3. VCC = 3 V .................................................................................................................................................................32
Table A-4. VCC = 2.5 V ..............................................................................................................................................................33
Table A-5. SN74CBT3125 Analog Parameter Measurement Data ...........................................................................................35
Table A-6. CD74HCT4066 Analog Parameter Measurement Data .......................................................................................... 36
Table A-7. CD74HC4066 Analog Parameter Measurement Data..............................................................................................39
Table A-8. SN74HC4066 Analog Parameter Measurement Data..............................................................................................42
Table A-9. CD4066B Analog Parameter Measurement Data.................................................................................................... 45
Table A-10. SN74LV4066A Analog Parameter Measurement Data ..........................................................................................49
Table A-11. SN74LVC1G66 Analog Parameter Measurement Data..........................................................................................53
Table A-12. SN74CBTLV3125 Analog Parameter Measurement Data......................................................................................55

Trademarks
All trademarks are the property of their respective owners.

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Introduction

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1 Introduction
Analog switches are designed to pass (or isolate) analog signals (both voltage and current) and support analog
applications such as audio and video data transmission. Texas Instruments offers a wide variety of switches andmultiplexers to improve system design with better accuracy, system reliability and platform scalability.
Selecting the right one can be a formidable task. This application report discusses some of the key
characteristics and features of TI’s switches and multiplexer families to make the selection process simpler
and more efficient.

1.1 Ideal Versus Non-Ideal Switch
When first considering switches, a schematic of the ideal switch (similar to Figure 1-1) might come to mind.

I/O

I/O

(In)

(Out)

Signal In = Signal Out

Figure 1-1. Ideal Switch
An input signal applied to the left I/O pin (or port) in Figure 1-1 results in an identical output signal at the right I/Opin, and vice versa. However, in the real world, switches are not ideal and there always is some loss. In the caseof clean, properly working mechanical switches, the loss is so minuscule that it hardly bears noting.
Like mechanical switches, solid-state switches are not ideal either. In fact, losses associated with solid-stateswitches can be significant. Why use a switch like this if it is so far from ideal? The answer is convenience.
Solid-state switches are small, fast, easy to use, easy to control, and consume relatively little power compared
to traditional electrically controlled switches, such as relays. The switches referred to in this application report
are complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET) switches. As mentioned
previously, they are not ideal, so we need a way to examine and compare the performance characteristics of thedifferent CMOS families. Figure 1-2 shows a simplified-circuit model of a CMOS switch.
CMOS (FET) Switch
Control or Enable

CF

Ci

ron

I/O
(In)

CioA

I/O
CCHNL

CioB

(Out)
Cio

Cio

Signal In > Signal Out

Figure 1-2. Behavioral Model of CMOS (FET) Switch
The output signal (right side, Figure 1-2) is altered due to parasitic effects of the switch. Results may include
decreased amplitude, signal distortion, phase shift, the introduction of noise, and frequency attenuation.

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Introduction

Parameters contributing to the nonideal characteristics include:
•
•
•
•
•

Ci - Control (enable) pin input capacitanceCio - Capacitance measured from either the input or output of the switch
CCHNL - NMOS (PMOS) channel capacitance
RON - The resistance inserted into the signal path as a result of the switch path being turned on
CF - Feed-through capacitance; negligible at lower frequencies or when switch is closed.

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Basic Signal Switch Structure

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2 Basic Signal Switch Structure
Texas Instruments signal switches share the common switch architectures NFET switch, Transmission gate
switch and NFET with charge pump.

2.1 NFET Switch
Figure 2-1 shows a simplified FET switch, which consists of an N-channel transistor and gate bias and enablecircuitry. The switch is bidirectional; the source and drain are interchangeable (while operating, the side with thelowest VI/O is the source). TI CBT bus switches are this type.
A

B
Drain
(Source)

VI/O

Source(Drain)
Gate

VI/O

OE

Figure 2-1. N-channel FET Switch
For an N-channel FET to operate properly, the gate should be biased more positive than the magnitude of thesignals to be passed. This is because the on-state resistance, RON (or RDS(ON) as it also is called), increases as
the gate, minus source voltage, VGS, decreases. If the lowest VI/O signal approaches the magnitude of VCC, VGS
decreases and RON increases (see Figure 2-2). The ability to maintain a low RON in a FET switch depends on
maintaining VGS as large as possible. In many applications, this characteristic is not a problem, but the designer
should be aware of the nonlinearity of this type of device.

ron − Ω

20

15
Nominal
10

5

0
−1

0

1

2

3

4

5

VI − V

Figure 2-2. On-State Resistance vs Lowest I/O Voltage for an N-channel FET Switch With VCC = 5 V
An N-channel FET can be used to implement a level translator. This switch can pass a signal from 0 V to VCC– VT, where VT is the threshold voltage of the NMOS. This characteristic can be used for down translation. For
voltage-translation applications, the switch is required to translate efficiently over a wide frequency range andis required to maintain the proper signal level. For example, when translating from a 5-V TTL to a 3.3-V LVTTL
signal, the switch is required to maintain the required VOH (output high voltage) and VOL (output low voltage)of 3.3-V LVTTL signal. One important consideration is that the switch can be used only for down translation,for example, high to low level. For low- to high-level translation, additional components (for example, pullup
resistors) are required.

2.2 Transmission Gate Switch
Analog (or bilateral, as they also are called) switches consist of a single N-channel transistor in parallel with asingle P-channel transistor (see Figure 2-3). These are also known as the Transmission gate switch.

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Basic Signal Switch Structure

A

B

VI/O

VI/O

OE

Figure 2-3. Parallel N-/P-Channel FET (Transmission Gate) Switch
As before, when VI/O approaches VCC, the N-channel conductance decreases (RON increases) while the Pchannel gate-source voltage is maximum and its RON is minimal. The resulting parallel resistance combination
is much flatter than individual channel resistances (see Figure 2-4). Examples of switches and multiplexers
with parallel n and p channel include TMUX11xx, TMUX61xx, TMUX12xx, TMUX13xx, TMUX6xxx, TMUX7xxx,
TMUX8xxx, TS5Axxxx, TS3Axxxx, HCT, HC, CD4000, TMUX40xx, LV-A, LVC, and CBTLV families.
p-Channel

n-Channelron − Ω

20

15

Nominal105n-Channel || p-Channel
0
−1

0

1

2

3

4

5

VI − V

Figure 2-4. On-State Resistance vs Input Voltage for a Parallel n-/p-Channel FET Switch
A flat RON is especially important if VI/O signals must swing from rail to rail. However, the tradeoff is increased
switch capacitance due to the additional P-channel transistor and associated bias circuitry.

2.3 NFET With Charge Pump
Some manufacturers offer N-channel signal switches with charge-pump-enabled pass transistors. A design ofthis type as shown in Figure 2-5 allows the gate voltage to be higher than VCC. This increases VGS above what is
possible in noncharge-pump devices and allows signals at or above VCC to be passed. A switch of this type has
the advantage of low, relatively flat RON (over the signal range), without the addition of a P channel and while
maintaining Cio values comparable to pure N-channel FET switches. This performance comes at the expenseof increased ICC (from a few µA to several mA in some cases). Examples include TMUX1072, TMUX136,
TMUX15xx, and the CB3Q family.

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Basic Signal Switch Structure

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A

B
VCC
ChargePump

EN (see Note A)
Note A: EN is the internal enable signal applied to the switch.

Figure 2-5. Basic Structure of an NMOS Series Switch With the Charge Pump
See Switches and muxes: What are common switch architectures? more details on the basics of analog signal
switches offered by Texas Instruments.

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Analog Versus Digital Signal Switches

3 Analog Versus Digital Signal Switches
TI offers a wide variety of signal switches, and sometimes the nomenclature can be confusing to the point of
implying limited functionality for a device or family. See details below on digital vs analog and bi-directional
functionality of switches.
••

Digital switch. Accepts digital inputs and will drive the output depending on the input logic.
Analog switch. Designed to conduct (or isolate) both analog and digital signals. These will not drive a newsignal but will provide bi-directionality to the signal applied to the inputs/outputs.

More details can be found in Switches and muxes: What are switches and multiplexers?.

3.1 Bidirectional Switches
There are two meanings:• The switch conducts equally well from source (S) to drain (D) or from drain (D) to source (S). Each channel
has very similar characteristics in both directions and supports both analog and digital signals. TI analog
switches and multiplexers are typically bidirectional (Figure 3-1).
A0

A1

S1

S2
D
S3

S4

•

Figure 3-1. Bidirectional Signal Path
Switch can be used in analog or digital applications.

See Switches and muxes: Are switches and multiplexers bidirectional? for more details.

3.2 Configuration and Channels
Switch Configuration defines the number of signals that can be selected and Channel defines the numberof configurations (circuits) in a single device. Texas Instruments offers switches and multiplexers in different
configurations and channel count. Table 3-1 shows the 1- and 2- channel configurations, but the number ofchannels may exceed.
Table 3-1. Configurations and Channels
1-Channel

S

1:1

2-Channel
S1

D1

S2

D2

D

S1A

Configuration

D1
S1

2:1

S1B
D

S2A

S2

D2
S2B

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Signal Switch Specifications and Features

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4 Signal Switch Specifications and Features
It should be apparent that the most important switch characteristic depends on how it is used. For example, what
VCC levels are present, what amplitude signals are required to be passed, what is the maximum signal distortion
limit for the system and so forth. These specifications and features are covered in more detail below:•••

Supply Voltage : Single power supply - Device with only positive power supply pins with reference
to ground. For noncharge-pump switches, VCC determines the amplitude of the analog signals that canbe passed without clipping. The voltage applied is labeled as VDD, VCC, V+ and so forth. Switches like
TMUX1072, SN3257-Q1, TMUX136, and the TMUX15xx, CB3Q family with integrated charge pumps canelevate the gate voltage above VCC (at the expense of larger ICC) and, thus, pass signals of a magnitude
greater than VCC.
Supply Voltage : Dual power supply - Device with positive and negative supply pins with reference toground. Voltage applied at the positive pin is labeled as VDD, VCC, V+, and so forth, and at the negative pin
is labeled as VSS, VEE, V-, and so forth. For noncharge-pump switches, VCC determines the amplitude of theanalog signals that can be passed without clipping. One or more of the gates of the pass transistors must
be biased relative to the minimum and maximum values of the expected input voltage range. Switches, suchas the TMUX11xx, TMUX61xx, TMUX62xx, TMUX74xxF, TMUX72xx, TMUX81xx, TMUX82xx, MUX36Sxx,
MUX36Dxx, CD4000, and TMUX40xx series allow for biasing from two supplies, making it easy to pass both
positive and negative signals.
Switch Control Signal Levels (VIH/VIL): VIH is the minimum voltage for the input control signal to achievea Logic 1 value and VIL is the maximum voltage for the input control signal to remain a Logic 0 value. Why
are these important analog switch considerations? In most applications, the signal switch is controlled by theoutput of a digital source, therefore, the control signal levels, VIH and VIL, must be compatible with that source
to ensure proper operation of the switch. To prevent digital logic control issues, the system must ensure thatthe output high (VOH) logic output is higher than the input high (VIH) logic input it is controlling. In addition, theoutput low (VOL) of the logic output must be lower than the input low (VIL) of the logic input it is controlling.
See Figure 4-1 for this logic standard. Some components may not meet the standard, but having VIH < VOH
and VIl > VOL ensures proper system operation. Furthermore, operating the control logic between the VIH and
VIL levels will leave the device in an undetermined state where the outputs cannot be known for certain. See
Implications of Slow or Floating CMOS Inputs for more information.
5V

VCC

2.4 V

VOH

2.0 V

VIH

1.5 V

Vt

0.8 V

VIL

0.4 V

VOL

0V

GND

5-V TTL

5V

VCC

4.44 V

VOH

3.5 V

VIH

2.5 V

1.5 V

Vt

VIL

3.3 V

VCC

2.4 V

VOH

2.0 V

VIH

1.5 V

Vt

1.8 V

VCC

VOH
VIH
Vt
VIL
VOL
GND

0.5 V

VOL

0.4 V

VOL

1.35 V
1.17 V
0.9 V
0.63 V
0.4 V

0V

GND

0V

GND

0V

5-V CMOS

0.8 V

VIL

3.3-V LVTTL

1.8-V CMOS

Figure 4-1. Logic Thresholds

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Signal Switch Specifications and Features

Integrated Pulldown on Logic Pins : The logic inputs of TI muxes are CMOS inputs. Leaving the logic
inputs of TI muxes floating is never recommended (See Implications of Slow or Floating CMOS Inputs)
except when using a device that has integrated pulldown resistors on the logic pins. These resistors willhold the logic pin to a known state when not being driven high or low. This removes the need for additional
external components, saving money and space.
ON Resistance (RON): The resistance inserted into the signal path as a result of the switch path being
turned on. Because it contributes to signal loss and degradation, low RON tradeoffs must be considered.
Noncharge-pump switches achieve low RON with large pass transistors. These larger transistors lead tolarger die sizes and increased Cio. This additional channel capacitance can be very significant as it limits thefrequency response of the switch. As stated in Section 2.3, switches utilizing charge-pump technology canachieve low RON and Cio, but require significantly higher ICC.
VDD

RON

S1

VS

+

•

RL

Switch ON

±

•

D1

Figure 4-2. On-Resistance
Switch Output Level: The maximum signal level a switch without a charge pump can pass is typically limited
to the switch VCC. Is there sufficient noise margin on the device downstream of the switch such that signal
attenuation in the switch will not cause data errors? For instance, the N-channel transistor of a CBT device
clamps the switch output at a little more than 1 V below the operating VCC, making it unsuitable for 5-V
CMOS high-level (VIH = 3.5 V) signal transmission unless operated from at least 4.5-V VCC. This clamping
won't be seen in devices with transmission gate architecture.
ON/OFF Capacitance (CON/COFF): The ON capacitive loading when a switch path is in the low impedancestate. The OFF capacitive loading when a switch path is in the high impedance state. Total switch andload capacitance must be considered because it can affect response time, settling time and fanout limits.
See more details in the application note: Improve Stability Issues with Low CON Multiplexers. Cio is thecapacitance of an input/output (I/O) terminal of the device with the input conditions applied that, according to
the product specification, establishes the high-impedance state at the output. This parameter is the internal
capacitance encountered at an input/output (I/O) of the device. These values are established by the design,
process, and package of the device.
VDD

S1

S Hi-Z D

D1

COFF
RL

VS
Switch OFF

Figure 4-3. Source and Drain Off Capacitance

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VDD

S1

S

SWITCH “ON”

Vs

CON/2

RL
CON/2

Figure 4-4. Source and Drain On CapacitanceFrequency Response: All CMOS switches have an upper limit to the frequency that can be passed.
No matter how low RON and Cio can be maintained in the chip manufacturing process, they still form
an undesired low-pass filter that attenuates the switch output signal. Bandwidth (BW) of a switch is thefrequency range of signals that can pass through the switch with no more than 3 dB of attenuation.
Magnitude (dB)

•

D1

D

í3 dB
Ban dwidth

Freque ncy (Hz)•••Figure 4-5. Bandwidth
Latchup-Immunity : This feature prevents the device’s power rails from shorting together (latching up)
due to electrical overstress, injected currents, or electrically fast transients. See Using Latch-Up Immune
Multiplexers to Help Improve System Reliability for information on TI multiplexers Latch-Up Immunity.
Sine-Wave Distortion or Total Harmonic Distortion: These are measurements of the linearity of thedevice. Nonlinearity can be introduced a number of ways (design, device physics, and so forth) but, typically,
the largest contributor is RON. As shown in Figure 2-2 and Figure 2-4, RON varies with VI/O for all typesof CMOS switches. Having a low RON is important, but a flat RON over the signal range is almost equallyimportant.
Crosstalk: There are two types of crosstalk to consider:– Channel-to-channel crosstalk (XTALK): A measurement of unwanted signal coupling from an ON channel
to an OFF channel. This is measured in a specific frequency and in specified in dB. The level of crosstalk
is a measure of how well decoupled the switch control signal is from the switch output. Due to the parasitic
capacitance of CMOS processes, changing the state on the control signal causes noise to appear on
the output. In audio applications, this can be a source of the annoying pop that is sometimes heard
when switching the unit on or off. Devices such as the TS5A22364 have built in shunt resistors that willdischarge any built up capacitance on the unselected signal path to reduce this popping sound.
VDD
VS1
S1

VS1

S

ON D

D1

+

RL

±

VS2

VS2

S2

+

S Hi-Z D

D2

RL

±

XTALK =

Figure 4-6. Channel-to-Channel Crosstalk

12

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Signal Switch Specifications and Features– Crosstalk between switches. The level of crosstalk also is a measure of adjacent-channel rejection. As
with control-to-output crosstalk, parasitic capacitance can couple the signal on one switch with that on
another switch.
Charge Injection (QC): Charge injection is a measurement of unwanted signal coupling from the control(IN) input to the analog output. This is measured in coulomb (C) and measured by the total charge induced
due to switching of the control input. TI specifies enable-to-output crosstalk and some competitors use thisparameter. As with enable-to-output crosstalk, changing the state on the control pin causes a charge to becoupled to the channel of the transistor introducing signal noise. It is presented in this report for a relative
comparison with the competition. TI muxes such as the TMUX1308, TMUX1309 and SN74HC4851 have built
in injection current control circuity to shunt any injected current to ground, stabilizing the output signal. See
more details in Prevent crosstalk with injection current control.
VDD

S1
VS

S

D

D1

+

RL

CL

EN

±
VE
N

VDD
VEN
0V

VDD
¨9D1

VD1

¨9D1
0V
QC = CL * ¨9D•Figure 4-7. Charge Injection
Off Isolation: A measurement OFF-state switch impedance. This is measured in dB at a specific frequency,with the corresponding channel in the OFF state.
VDD
VS1

VD1
S1

S

Hi-Z

D

D1

RL

VS
Switch OFF•

Figure 4-8. Off-Isolation
ON Leakage Current: Leakage current measured at the input port in the ON state, with the corresponding
output port in the ON state and the output being open (See Figure 4-9). Leakage current during the highimpedance state should be very small. Leakage current, if high, may load an isolated bus and corrupt thedata.

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VDD

IS

S1

S

D1

ID(ON)or
IS(ON)

+

VS

ON D

±

ID

RL

Switch ON
IS • ,D•

Figure 4-9. ON Leakage Current
OFF Leakage Current: Leakage current measured at the input port, with the corresponding channel output
in the OFF state under worst-case input and output conditions (See Figure 4-10) . Leakage current is an
important parameter, as it contributes to DC errors both when the switch is ON and when it is OFF.
VDD

S1
+

VS

S

Hi-Z

D

D1

ID(OFF)
RL±

Switch OFF•

Figure 4-10. OFF Leakage Current
Break-Before-Make Time (tBBM): Ensures that in a multiplexer, two multiplexer paths are never electricallyconnected when the signal path is changed by the select input. Break before make delay is a safety featurethat prevents two inputs from connecting when the device is switching. The output first breaks from the ONstate switch before making the connection with the next on-state switch. It guarantees that two multiplexer
paths are never electrically connected when the signal path is changed by the select input. See Figure 4-11
for more details.
3V
VSEL

tr < 20ns

tf < 20ns

0V

Output80%
tBBM 1tBBM 20V
tOPEN (BBM) = min ( tBBM 1, tBBM 2)•

14

Figure 4-11. Break-Before-Make Time (tBBM)
Turn ON (tON) / Turn OFF (tOFF) Time: The time required for a switch path to be internally changed to an ON
or OFF state. These parameters determine how quickly the switch can respond to a desired ON or OFF state(See Figure 4-12). In general, switch enable and disable times are not symmetrical. This is not usually an
issue, as few applications require high control (enable) signal frequencies. See more details on switch timing
characteristics in Switches and muxes: What are timing characteristics?.

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Signal Switch Specifications and Features
3V
VEN

tr < 20 ns

50%

50%

tf < 20 ns

0V
tON

tOFF
90%

Output
10%

0V

•

•

•
•

•

Figure 4-12. Turn-ON (tON) and Turn-OFF (tOFF) Time
Propagation Delay (tpd): This is the time required for the signal to pass through the switch from the input tothe output. This parameter is negligible for all but the most critical timing budgets. When the switch is ON, thepropagation delay through one or more of the pass transistors is minimal. The load seen on the output of theswitch and the driving strength at the input will typically have far greater contributions and limitations on the
propagation delay and timing than the switch itself. The On-resistance and On-capacitance and load of thedevice can be used for a method to approximate the propagation delay.
1.8 V Control Logic: Switches with this feature have a built-in voltage translator to prevent voltage mismatch
between the supply rail and the control logic. VIH and VIL levels are compatible with the 1.8-V logic levels
at any voltage supply. See the Simplifying Design With 1.8 V logic MUXes and Switches Tech Note formore information. Most of the new TMUX devices (for example: TMUX1108, TMUX1511, TS3A27518E,
TS5A26542) come with the 1.8 V control logic feature. The built-in voltage translator prevents voltage
mismatch between the supply rail of the TMUX device and the control logic of the processor. This featureenables the mux to be controlled directly by the processor through standard 1.8 V GPIO pins. This eliminates
the need for an external voltage translator, saving space in the system.
1.2V Control Logic : Similar to the 1.8V control logic, this feature allows for muxes, such as the TMUX1575,
to be logic compatible with 1.2V logic levels reducing the need for an external voltage translator, saving
space in the system.
Support Negative Voltage : This is defined as a multiplexer that allows negative voltages to be pass without
the need for a dual supply. The TMUX4157N is an example of this with a single negative voltage supply, while
TS5A22362 and TS5A22364 are both examples of devices that support negative analog signal pass throughwith only a positive single sided supply.
Fail-safe Logic: Ensures the switch stays off and the logic pin does not back-power VDD when the voltage
on the signal pin is greater than VDD. TI switches, such as TMUX1574, TMUX1575, TMUX72xx, TMUX73xx
and TMUX4157N, with Fail-safe Logic will protect downstream components when a logic signal is present
on the select pins while the switch is unpowered. This feature allows voltages on the control pins to be
applied before the supply pin, protecting the device from potential damage. The switch maintains in a highimpedance state on the SEL logic pins preventing power from going through VDD during power sequencing.
For example, the Fail-Safe Logic feature allows the select pins of the TMUX1574 to be ramped to 5.5 V while
supply VDD = 0 V. Additionally, the feature enables operation of the multiplexer with VDD below the voltage on
the select pins.
– Protects mux and downstream ICs from damage.
– Eliminates need for power sequencing solutions.
– Reduces BOM count and cost Simplifies system design.
– Improves system reliability.
See more details in What is fail-safe logic?.

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VDD = 0 V

VDD

VCC = 5 V
VSEL

Protection

0V
Subsystem
A

SEL

S

High-ZD

Subsystem
B

Figure 4-13. Fail-Safe Logic

16

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5 Texas Instruments Analog Signal Switches and Multiplexers Portfolio
Texas Instruments offers a comprehensive portfolio of precision, protection, and general-purpose switches andmultiplexers to support end-to-end signal chain needs.
This TI analog signal switch and multiplexer portfolio is intended to give a top level view of the characteristics
and parameters that the device in that category have. The categories are not always mutually exclusive forexample especially when referring to the protection category. Many of the devices in the protection category
have some of the same low leakage / low RON parameters of the precision family yet add additional protection
features.
The following sections highlight key features and applications of the precision, protection, and general-purpose
switches and multiplexers.

5.1 Precision Switches and Multiplexers
TI offers a broad range of precision multiplexers and switches in different configurations to improve performanceand minimize offset errors and signal distortion in high-accuracy measurement systems. The key differentiating
features of these precision switches are:••••Low ON – Leakage (ION)
Low ON - Resistance (RON)
Low ON - Capacitance (CON)Low Charge Injection (QC)

In addition to the above features, the TI analog precision switches also support 1.8 V control logic, fail safe logic,
break-before-make switching and are available in ultra small packages.
Table 5-1 below shows performance specifications of analog precision switches:
Table 5-1. Analog Precision Switches and Multiplexers
VSIGNAL

Low Voltage (VSIGNAL =<24V)

Mid Voltage (25V =<VSIGNAL =< 99V)

Part Number

Configuration

RON (Typ)
(Ω)

CON
(pF)

QC
(pC)

ION
(µA)

Package/Pin
SC70|5, SOT-23|5

TMUX1101/02

1:1, 1 channel

2

18

-1.5

0.002

TMUX1121/22/23

1:1, 2 channel

1.9

17

-1.5

0.002

VSSOP|8

TMUX1111/12/13

1:1, 4 channel

2

19

-1.5

0.002

TSSOP|16, UQFN|16

TMUX1119

2:1, 1 channel

2.5

21

-6

0.004

SC70|6, SOT-23|6

TMUX1136

2:1, 2 channel

1.8

20

-6

0.002

USON|10, VSSOP|10

TMUX1133

2:1, 3 channel

2

20

-1

0.002

TSSOP|16

TMUX1134

2:1, 4 channel

2

20

-1

0.002

TSSOP|20

TMUX1104

4:1, 1 channel

2.5

40

1.5

0.0035

USON|10, VSSOP|10

TMUX1109

4:1, 2 channel

2.5

35

1

0.003

TSSOP|16, UQFN|16

TMUX1108

8:1, 1-channel

2.5

65

1

0.004

TSSOP|16, UQFN|16

TMUX7234

2:1, 4 channel

3.5

76

3

0.0002TSSOP|20, WQFN|20

TMUX6121/22/23

1:1, 2 channel

120

4.2

0.15

0.0004VSSOP|10

TMUX6111/12/13

1:1, 4 channel

120

4.2

0.6

0.0005TSSOP|16, WQFN|16

TMUX6119

2:1, 1 channel

120

4.3

0.19

0.0004SOT-23|8

TMUX6136

2:1, 2 channel

120

5.5

-0.4

0.0004TSSOP|16

TMUX6104

4:1, 1 channel

125

5

0.35

0.001

TSSOP|14

MUX36S04

4:1, 2 channel

125

6.7

0.3

0.0033TSSOP | 16, WQFN | 16

MUX36S08

8:1, 1 channel

125

9.4

0.3

0.0033TSSOP | 16, WQFN | 16

MUX36D08

8:1, 2 channel

125

8.7

0.31

0.0053

QFN | 32, SOIC | 28, TSSOP |28, WQFN | 32

MUX36S16

16:1, 1 channel

125

13.5

0.31

0.0053

QFN | 32, SOIC | 28, TSSOP |28, WQFN | 32

5.2 Protection Switches and Multiplexers
TI offers a broad range of protection multiplexers and switches in different configurations to protect upstream
and downstream components from and during fault conditions while maximizing signal integrity. The key
differentiating features of these protection switches are:

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Powered Off Protection: Protects switch and isolates signal path when signals are present at the I/O pins
and VDD = 0 V. See the Eliminate Power Sequencing With Powered-off Protection Signal Switched Tech
Note and Simplify power sequencing with powered-off protection for more information. TI switches withpowered-off protection will protect downstream components when input signals are present in the I/O pins
while the switch is not powered. The switch maintains a high-impedance state on the I/O pins which prevents
back-powering VDD and the Select (SEL) pin with the following features.
– Provides electrical isolation between subsystems.
– Prevents data from being transmitted unintentionally.
– Eliminates need for power sequencing solutions.
– Reduces BOM count and cost Simplifies system design.
– Improves system reliability.
VDD = 0 V

VDD
VCC = 5 V
Pro tection
SEL

VS
Sub system 0 V
A

•

IS
S

Sub system
B

D

High-Z

Figure 5-1. Powered-off Protection
Over Voltage Protection / Fault Detection : Fault-protect multiplexers have built in fault-protected features
such as overvoltage detection and protection. These can easily be identified with an 'F' appended to themultiplexer name, such as TMUX7412F, TMUX7308F and TMUX7462F. These devices detect overvoltage
inputs by comparing the voltage on a source pin with the supplies. A signal is considered overvoltage if it
exceeds the supply voltage by the threshold voltage (VT or VTH), listed in the data sheet. Upon detectionof an overvoltage event, the switch enters a high impedance state, isolates the signal path and protects
downstream components.
Depending on the device the overvoltage threshold can be determined 1 of 3 ways; A fixed threshold, athreshold that is equal to the VDD supply, or a configurable threshold via an extra supply provided throughthe IC.

VI/O(MAX)

FIXED Threshold

VI/O(MAX)

Supply (VDD)
ThresholdVI/O(MAX)

Switch“OFF”

Switch“OFF”

Switch
“OFF”

VI/O

VI/O
VOFF
VDD

VTH

VT

VI/O
VOFF
VFP

Switch“ON”

Switch“ON”
VI/O(MIN)

Supply (VFP)
ThresholdVI/O(MIN)

VT

Switch“ON”
VI/O(MIN)

Figure 5-2. Overvoltage Protection Threshold18

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The TMUX1072 is a unique low voltage device that supports overvoltage detection as well. This devices has afixed threshold for fault events. When the voltage at the COM pin exceeds the overvoltage threshold, VOVP_TH,
the open drain output FLT pin pulls the pin low to indicate an overvoltage event has been detected and the I/Opath goes HI-Z. The open drain output will release the FLT pin when the voltage on the COM pin returns below
the VOVP_TH.

VOPT_TH
COM1/COM2

NO1/NO2 or
NC1/NC2FLT

Figure 5-3. TMUX1072 Overvoltage Protection Waveform•

Undervoltage Protection - Devices with undervotlage protection detect undervoltage inputs on the I/O's
by comparing the voltage on a source pin with the supplies. A signal is considered undervoltage if it
falls below the supply voltage by the threshold voltage (VTH), listed in the data sheet. Upon detection ofan undervoltage event, the switch enters a high impedance state, isolates the signal path and protects
downstream components.
Depending on the device, the overvoltage threshold can be determined 1 of 2 ways; A threshold that is equal
to the VSS supply, or a configurable threshold via an extra supply provided through the IC.

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VI/O(MAX)

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Supply (VSS)
Threshold

Supply (VFN)
ThresholdSwitch“ON”

Switch
“ON”

VI/O

VSS
VOFF

VT

VFN
VOFF

VT

VI/O

VSS

Switch“OFF”

Switch“OFF”
VI/O(MIN)•

Figure 5-4. Undervoltage Protection Threshold
Input voltage tolerance : This is defined as a specific protection referencing the maximum voltage that canbe applied to any source pin. The voltage can be referenced from source pin to supply or between the source
pins and one or more drain pins. Below is an example of a device with a maximum voltage that can beapplied to any source input pin of +60 V or -60 V. It shall be cautioned that the device is rated to handle
maximum stress of 85 V across different pins as well. The device has different maximum stress ratings
across different pin combinations and are defined as the following :1. Between the source pins and supply rails
For example, if the device is powered by VDD supply of 20 V, the maximum negative signal level on any
source pin is –60 V to maintain the 60 V maximum rating on any source pin. If the device is powered by VDD
supply of 40 V, the maximum negative signal level on any source pin is reduced to –45 V to maintain the 85
V maximum rating across the source pin and the supply.
2. Between the source pins and one or more drain pins
For example, if channel S1 is ON and the voltage on S1(A) pin is 40 V. In this case, the drain voltage isalso 40 V. The maximum negative voltage on any of the other source pins is –45 V to maintain the 85 V
maximum rating across the source pin and the drain pin.
Table 5-2 shows performance specification of analog protection switches:20

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Table 5-2. Analog Protection Switches and Multiplexers
VCC

Part Number

Configuration

RON (Typ)(Ω)(1)

Features1.8-V compatible control inputs, Failsafe logic, Supports JTAG signals,
Supports SPI signals, Supports input
voltage beyond supply

TMUX1511

1:1, 4 channel

2

TSSOP | 14, UQFN | 16

TMUX154E

2:1, 2 channel

6

UQFN | 10, VSSOP | 10

1.8-V compatible control inputs,
Powered-off protection, Supports I2C
signals, Supports input voltage beyond
supplyTMUX1574

2:1, 4 channel2

SOT-23-THN | 16, TSSOP | 16,
UQFN | 16

1.8-V compatible control inputs, Failsafe logic, Supports JTAG signals,
Supports SPI signals, Supports input
voltage beyond supply

TMUX1575

2:1, 4 channel

1.7

DSBGA | 16

1.2-V compatible control inputs, 1.8V compatible control inputs, Poweredoff protection, Supports SPI signals,
Supports input voltage beyond supply

TMUX136

2:1, 2 channel

4.6

UQFN | 10

1.8-V compatible control inputs,
Supports I2C signals

TMUX1072

2:1, 2 channel

6

UQFN | 12, VSSOP | 10

1.8-V compatible control inputs,
Supports I2C signals, Supports input
voltage beyond supply

TS5A3159A

2:1, 2 channel

0.7

DSBGA | 6, SC70 | 6, SOT-23 |6

Powered-off protection, Break-beforemake

SN74CBTLV3257

2:1, 4 channel

5

SOIC | 16, SSOP | 16, TSSOP| 16, TVSOP | 16, UQFN | 16,
VQFN | 16

Powered-off protection, Supports JTAG
signals, Supports SPI signals

TS5A3359

3:1, 1channel

0.7

DSBGA | 8, VSSOP | 8Powered-off protection, Break-beforemake

SN74CBT3305C (1)1:1, 2 channel

3

SOIC | 8, TSSOP | 8

Supports I2C signals, Undershootprotection

SN74CBTD3306C

1:1, 2 channel

3

SOIC | 8, TSSOP | 8

Signal path translation, Undershootprotection

SN74CB3Q3257

2:1, 4 channel

4

SSOP | 16, TSSOP | 16,
TVSOP | 16, VQFN | 16

Powered-off protection, Supports
JTAG signals, Supports SPI signals,
Supports input voltage beyond supply

SN74CBTLV1G125 (1)1:1, 1 channel

5

SOT-23 | 5, SC-70 | 5Powered-off protection

SN74CB3T1G125 (1)1:1, 1 channel

5SC70 | 5, SOT-23 | 5Powered-off protection, Signal pathtranslation

SN74CBTLV3126

1:1, 4 channel

5

TS3A27518E

2:1, 6 channel

4.4

TSSOP | 24, WQFN | 24

TMUX8212

4:1 ,1 channel

5

TSSOP | 16

TMUX8108

8:1, 1 channel

37

TSSOP | 16

TMUX8109

4:1, 2 channel

37

TSSOP | 16

TMUX7412F

1:1, 1 channel

9.5

WQFN | 16

TMUX7462F

1:1, 4 channel

9.5

WQFN | 16

TMUX7308F

8:1, 1 channel

250

TSSOP | 16, WQFN | 16

MPC5094:1, 2 channel

1300

SOIC | 16, PDIP | 16

MPC508

8:1, 1 channel

1300

SOIC | 16, PDIP | 16

MPC507

8:1, 2 channel

1300

SOIC | 28

MPC506

16:1, 1 channel

1300

SOIC | 28

Low Voltage (VSIGNAL=< 24V)Mid Voltage (25 V =<VSIGNAL= < 99V)

Package/Pin

SOIC | 14, SSOP | 16, TSSOP | Powered-off protection, Supports JTAG
14, TVSOP | 14, VQFN | 14
signals, Supports SPI signals
Powered-off protection, Break-beforemake, Supports SPI signals, Supports
JTAG signals, 1.8-V compatible control
inputs

1.8-V compatible control inputs, Breakbefore-make, Fail-safe logic, Poweredoff protection

1.8-V compatible control inputs,
Break-before-make, Fail-safe logic,
Overvoltage protection
1.8-V compatible control inputs,
Break-before-make, Fail-safe logic,
Overvoltage protection, Powered-off
protection
Dual supply, Break-before-make,
Overvoltage protection, Powered-off
protection

See Appendix A for analog performance of CBT and CBTLV family.

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5.3 General Purpose Switches and Multiplexers
TI offers a broad portfolio of bidirectional general-purpose switches and multiplexers across a wide voltage
range, channel count and configuration that are typically used in low-frequency or digital (ON or OFF)applications where size and BOM optimization or both are most important.
Table 5-3 below shows performance specifications of general purpose multiplexer family of devices:
Table 5-3. General-Purpose Switches and Multiplexers
VSIGNAL

Part Number

Configuration

RON (Typical)(Ω)

Package | Pin

Features

Low Voltage (VSIGNAL=<
24 V)

TMUX1309

4:1, 2 channel

59

SOT-23-THIN | 16, TSSOP | 16, WQFN |16

TMUX1308

8:1, 1 channel

59

SOT-23-THIN | 16, TSSOP | 16, WQFN |16

1.8-V compatible control inputs,
Break-before-make, Injection current
control

TMUX1247

2:1, 1 channel

3SC70 | 6

TMUX1219

2:1, 1 channel

3SC70 | 6, SOT-23 | 6

TMUX1204

4:1, 1 channel

9

USON | 10, VSSOP | 10

TMUX1209

4:1, 2 channel

5

TSSOP | 16, UQFN | 16

TMUX1208

8:1, 1 channel

5

TSSOP | 16, UQFN | 16

SN74LVC2G66

1:1, 2 channel

6

DSBGA | 8, SM8 | 8, VSSOP | 8

TS5A3157

2:1, 1 channel

5.5

DSBGA | 6, SC70 | 6, SOT-23 | 6

Break-before-make

10

UQFN | 10, VSSOP | 10

Break-before-make, Supports I2C
signals
Break-before-make

TS5A23157

Mid Voltage (25 V =<VSIGNAL= < 99V)

2:1, 2 channel

1.8-V compatible control inputs,
Break-before-make, Fail-safe logic

Supports I2C signals

CD74HC4053 (1)2:1, 3 channel

45

PDIP | 16, SOIC | 16, SO | 16, TSSOP |16

SN74LV4053A (1)2:1, 3 channel

23

PDIP | 16, QFN| 16, SOIC | 16, SOP |16, TSSOP | 16, CDIP | 16

Support mixed-mode voltage
operation on all ports

SN74LVC1G3157 (1)2:1, 1 channel

6SC70 | 6, SOT-23 | 6, SON | 6, DSBGA |6, X2SON | 6

Break-before-make

PDIP | 16, SOIC | 16, SO | 16, TSSOP |16

Break-before-makeCD4051B (1)

8:1, 1 channel

125

TMUX4051

8:1, 1 channel

125

SOT-23 THIN | 16, TSSOP |16, WQFN |16±12-V signal range, 1.8-V compatible
logic

TMUX4052

4:1, 2 channel

125

SOT-23 THIN | 16, TSSOP |16, WQFN |16±12-V signal range, 1.8-V compatible
logic

TMUX4053

2:1, 3 channel

125

SOT-23 THIN | 16, TSSOP |16, WQFN |16±12-V signal range, 1.8-V compatible
logic

TS12A4514

1:1, 1 channel

6.5

PDIP | 8, SOIC | 8, SOT-23 | 5

Break-before-make

TMUX8212

1:1, 4 channel

5

TSSOP | 16

TMUX8108

8:1, 1 channel

37

TSSOP | 16

TMUX8109

4:1, 2 channel

37

TSSOP | 16

TMUX6219

2:1, 1 channel

2

VSSOP | 8

MUX5094:1, 2 channel

125

SOIC | 16, TSSOP | 16

MUX508

8:1, 1 channel

125

SOIC | 16, TSSOP | 16

MUX507

8:1, 2 channel

125

SOIC | 28, TSSOP | 28

MUX506

16:1, 1channel

125

SOIC | 28, TSSOP | 28

(1)

See Appendix A for analog performance of HC, LV, LVC and CD400 family.

22

Selecting the Correct Texas Instruments Signal Switch
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1.8-V compatible control inputs,
Break-before-make, Fail-safe logic,
Powered-off protection

Break-before-make

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Texas Instruments Analog Signal Switches and Multiplexers Portfolio

5.4 Automotive Switches and Multiplexers
Table 5-4 below shows performance specification of automotive (AECQ100) switches:
Table 5-4. Automotive Switches and Multiplexers – AECQ100
Configuration

1:1, 1 channel

Part Number

Package/Pin

Features

TS5A3166-Q1

SC70 | 5

Low RON (<10 Ω), Powered-off protection

SN74LVC1G66-Q1

SC70 | 5, SOT-23 | 5

Low RON (<10 Ω)

SN74CBTLV1G125-Q1

SOT-23 | 5

Low RON (<10 Ω), Powered-off protection

1:1, 2 channel

SN74LVC2G66-Q1

VSSOP | 8

Low RON (<10 Ω), Supports I2C signals

1:1, 4 channel

CD4066B-Q1

SOIC | 14

Low CON (<10 pF)

CD74HCT4066-Q1

SOIC | 14, TSSOP | 14 52
mm2: 6 x 8.65 (SOIC | 14),

Low CON (<10 pF)

TS5A3159-Q1

SOT-23 | 6

Break-before-make, Low RON (<10 Ω)

SN74LVC1G3157-Q1

SC70 | 6, SOT-23 | 6

Low RON (<10 Ω)

TS5A22364-Q1

VSSOP | 10

Low RON (<10 Ω), Break-before-make, Supports negative
voltages

TS5A3357-Q1

VSSOP | 10

Low RON (<10 Ω), Break-before-make, Supports I2C
signals

2:1, 3 channel

TMUX4053

SOT-23 THIN | 16, TSSOP |16,
WQFN | 16

2:1, 4 channel

SN3257-Q1

SOT-23-THN | 16, TSSOP | 16

Low RON (<10 Ω), 1.8-V compatible control inputs,
Break-before-make, Fail-safe logic, Integrated pulldown
resistor on logic pin, Powered-off protection, Supports SPI
signals, Supports input voltage beyond supply

2:1, 6 channel

TS3A27518E-Q1

TSSOP | 24, WQFN | 24

Low RON (<10 Ω), Powered-off protection, Break-beforemake, Supports SPI signals, Supports JTAG signals, 1.8V compatible control inputs

3:1, 1 channel

TS5A3357-Q1

VSSOP | 8

Break-before-make

TMUX1309-Q1

SOT-23-THIN | 16, TSSOP | 16,
WQFN | 16

1.8-V compatible control inputs, Break-before-make, Failsafe logic, Injection current control

SOT-23 THIN | 16, TSSOP |16,
WQFN | 16

RON (<125 Ω), ±12-V signal range, 1.8-V compatible logic

TS3A5017-Q1

VQFN | 16

Powered-off protection, Supports SPI signals

SN74LV4052A-Q1

SOIC | 16, TSSOP | 16

Low CON (<10 pF)

TMUX1308-Q1

SOT-23-THN | 16, TSSOP | 16

1.8-V compatible control inputs, Break-before-make,Current injection control

TMUX1208-Q1

UQFN | 16

1.8-V compatible control inputs, Break-before-make, Failsafe logic

TMUX4051

SOT-23 THIN | 16, TSSOP |16,
WQFN | 16

RON (<125 Ω), ±12-V signal range, 1.8-V compatible logic

SN74HC4851-Q1

SOIC | 16, TSSOP | 16

Current Injection Control

SN74LV4051A-Q1SOIC | 16, SOIC | 16, TSSOP |16

Low RON (<10 Ω), Break-before-make

CD74HCT4051-Q1

SOIC | 16

Low CON (<10 pF), Break-before-make
Low CON (<10 pF), Break-before-make

2:1, 1 channel

2:1, 2 channel

Low Voltage(VSIGNAL=< 24 V)

TMUX4052

4:1, 2 channel

8:1, 1 channel

Mid Voltage (25 V =<VSIGNAL= < 99V)

16:1, 1 channel

CD74HCT4067-Q1

SOIC | 24

1:1, 4 channel

TMUX7212-Q1

TSSOP | 16

TMUX6219-Q1

VSSOP | 8

TMUX7219-Q1

VSSOP | 8

2:1, 1 channel

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Switches and Multiplexers Performance in Digital Signal Applications

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6 Switches and Multiplexers Performance in Digital Signal Applications
For switches and multiplexers in use in digital signal applications, in addition to the signal switch specifications
highlighted in Section 4, the following features also need to be considered:•

Number of bits required to be switched. With TI's wide variety of signal switches, it is possible to switch
between 1 to 32 bits at the same time with a single device. For instance, the LVC1G66 or CBT1G125 can beused to switch a single bit, while the CBTLV16211 is capable of switching 24 bits total in banks of 12. Or, bytying the adjacent enable pins together, it is possible to control 24 bits with one enable signal.
Special features. TI offers bus switches with special features, such as an integrated diode for singlecomponent level shifting (CBTD), active clamps for undershoot protection (CBTK), Schottky-diode clamps
for undershoot protection (CBTS), a bus-hold option (CBTH) for holding floating or unused I/O pins at valid
logic levels, and an integrated-series-resistor option (CBTR) to reduce signal-reflection noise.

•

Table 6-1 summarizes the digital performance characteristics of TI signal switches from which generalities canbe derived regarding switch-family performance. For exact parameters, refer to the respective data sheets.
Table 6-1. Summary of Digital Performance
Part Number (1)

VCC

RON

TMUX1209

1.08-5.5 V

5-9 Ω

TMUX1511

1.5-5.5 V

2ΩCD4066

3-18 V

200-1300 ΩtON (3)tOFF (4)VIH(control inputs)

VIL(control
inputs)Ci(control)

_

60 ns

45 ns

1.8-V CMOS

1.8-V CMOS

1 pF

42 pF

38 pF

67 ps

20 µs

4 µs

1.8-V CMOS

1.8-V CMOS

3 pF

3.3-6 pF

2.4-4 pF

7-40 ns

15-70 ns

15-70 ns

approximately.
0.7 × VCC

approximately.
0.2 × VCC

5-7.5 pF_

8 pF

tpd (2)

Cio (on)Cio (off)

CD74HC4066

2-10 V

15-142 Ω

4-90 ns

8-150 ns

12-225 ns

5-V CMOS

5-V CMOS

10 pF

_

5 pF

CD74HCT4066

4.5-5.5 V

25-142 Ω

4-18 ns

4-18 ns

9-36 ns

5-V TTL

5-V TTL

10 pF

_

5 pF

SN74HC4066

2-6 V

30-150 Ω

3-75 ns

18-225 ns

22-250 ns

5-V CMOS

5-V CMOS

3-10 pF_

9 pF

LVC1G66

1.65-5.5V

3-30 Ω

0.6-2 ns

1.5-10 ns

1.4-10 ns

5-V CMOS

5-V CMOS

2 pF

13 pF

6 pF

LV4066A

2-5.5 V

21-225 Ω

0.3-18 ns

1.6-32 ns

3.2-32 ns

5-V CMOS

5-V CMOS

1.5 pF_

5.5 pF

CBT3125

4-5.5 V

5-22 Ω

0.25-0.35 ns

1.8-5.6 ns

1-4.6 ns

5-V TTL/LVTTL

5-V TTL/
LVTTL

3 pF

_

4 pF

CBTLV3125

2.3-3.6 V

5-40 Ω

0.15-0.25 ns

2-4.6 ns

1-4.2 ns

LVTTL/2.5-V
CMOS

LVTTL/ 2.5-V
CMOS

2.5 pF

_

7 pF

(1)

(3)
(4)

Data are based on data-sheet parameters for the parts tested for this application report. Refer to the respective data sheets for specificparameters and load conditions.
tpd is the same as tPLH/tPHL. The switch contributes no significant propagation delay other than the RC delay of the typical on-state
resistance of the switch and the load capacitance when driven by an ideal voltage source (zero output impedance).
tON is the same as tPZL/tPZH.
tOFF is the same as tPLZ/tPHZ.

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Applications

7 Applications
The examples below show some common applications of signal switches and multiplexers:

7.1 SPI Multiplexing
Common applications that require the features of the multiplexer like the TMUX1574 and SN3257-Q1 include
multiplexing various protocols from a possessor or MCU such as SPI, eMMC, I2S, or standard GPIO signals.
These devices provides superior isolation performance when the device is powered. The added benefit ofpowered-off protection allows a system to minimize complexity by eliminating the need for power sequencing in
hot-swap and live insertion applications. The example shown in Figure 7-1 illustrates the use of the SN3257-Q1
to multiplex an SPI bus to multiple flash memory devices.
1.8 V

3.3 V

VI/O

0.1µF 3.3 V
FLASH Device #1

VDD

VDD

Processor

S1A
S2A
S3A
S4A

D1

RAM

MISO
MOSI
SCLK
SS

D2

SPI PORTCPU

D3

FLASH Device #2
S1B
S2B
S3B
S4B

D4
Peripherals
1.8V Logic
I/O

SEL
EN

GND

MISO
MOSI
SCLK
SS

GND

Figure 7-1. Multiplexing Flash Memory
One useful application of multiplexers is isolating various protocols from a possessor or MCU such as JTAG,
SPI, or standard GPIO signals. Switch like the TMUX1511 provides excellent isolation performance when thedevice is powered. The added benefit of powered-off protection allows a system to minimize complexity byeliminating the need for power sequencing in hot-swap and live insertion applications
VDD
VDD

0.1µF
Processor

JTAG, SPI, GPIOPortTDI / MIS O / GPIO
TDO / MOSI / GPIOTCK / SCLK / GPIOTMS / SS / GPIO

VI/O

FLASH
S1

D1

S2

D2

S3

D3

S4

D4

GND

SEL1
SEL2
SEL3
SEL4

JTA G
DEBUG,SPI, GPIO

RAM

CPU

1.8V Logic
I/O

Per ipheral s
GND

Figure 7-2. Isolation of JTAG, SPI, and GPIO Signals

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7.2 Multiplexing Signals to External ADC
Figure 7-3 shows a 16-bit, 4 input, multiplexed, data-acquisition system. This example is typical in industrial
applications that require low distortion for precision measurements. The circuit uses the ADS8864, a 16-bit,
400- kSPS successive-approximation-resistor (SAR) analog-to-digital converter (ADC), along with a precisionamplifier, and a 4 input multiplexer (TMUX1104).

VDD

Bridge Sensor

VDD

EN
S1

3.3V

+

REF

OPA333-

S2

Thermocouple

D

...

S3

+
OPA333Gain / Filter
Network

Current
Sensing

S4

GND

Photo
LED Detector

ADS8864

A0

A1
1.8V Logic
Signals

TMUX1104

Optical Sensor
Analog Inputs

Figure 7-3. Multiplexing Signals to External ADC

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Applications

7.3 Multiplexing Signals to External ADC in Fault Sensitive Conditions
In analog input programmable logic controllers (PLC) a multiplexer is often used to switch multiple sensors
to a single ADC. By using a multiplexer, the number of components in the system can be reduced to savesystem cost and size. In a PLC module a ±10 V input signal range is common for interfacing with external fieldtransmitters and sensors; however, there are a number of fault cases that may occur that can be damaging
to many of the integrated circuits. Such fault conditions may include, but are not limited to, human error fromwiring connections incorrectly, component failure or wire shorts, electromagnetic interference (EMI) or transient
disturbances, and so forth.TMUX7308F is an appropriate multiplexer for protected downstream devices fromsuch fault conditions.
SupplyPower Module

GND

VDD

Bridge Sensor

PLC Analog Input Module

VSS

TMUX7308F
S1
S2

Thermocouple

REF5025

5V

S3

...

Current Sensing

FaultProtected
MUX
InputsD

S4Gain / Filter
Network

ADS125H01

S5ISO77xx

Signal
Processing

S6
S7

Photo
LED Detector

S8
V
GND

Optical Sensor

A0

A1

A2
1.8-V Logic
Signals

Sensors

Figure 7-4. Multiplexing Signals to External ADC in Fault Sensitive Conditions

7.4 Switchable Op Amp Gain Setting
One example application of the multiplexer is to change an Op Amp from unity gain setting to an inverting
amplifier configuration. Utilizing a switch like the TMUX1219 allows a system to have a configurable gain andallows the same architecture to be utilized across the board for various inputs to the system.
Input

Unity Gain

R

R
OutputS1
D

Inve rting

S2

TLV900 1
1.8 V

SEL
TMUX121 9

Figure 7-5. Switchable Op Amp Gain Setting

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7.5 Multiplexing Body Control Module (BCM) Inputs
Automotive BCMs are complex systems designed to manage numerous functions such as lighting, door locks,
windows, wipers, turn signals and many more inputs. The BCM monitors these physical switches and controls
power to various loads within the vehicle. A CMOS multiplexer can be used to multiplex the inputs and minimize
the number of GPIO or ADC inputs needed by an onboard MCU. The TMUX1308-Q1 features multiplexing
various physical switches in a body control module (BCM) or electronic control unit (ECU). Figure 7-1 shows atypical BCM system using the TMUX1308-Q1 to multiplex system inputs.
D1

Electronic Control Unit (ECU)

VBAT V

CVBAT

CBUFF
Wetting Current
Control Circuity

FET

FET
RWETT
R1
R2

CX

Rx
S8

Rx

CX

TMUX1308-Q1

S1…C

Logic x3

Figure 7-6. Multiplexing BCM Inputs

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Applications

7.6 High Current Range Selection Using External Resistor
One example to take advantage of the precision performance of devices such as the TMUX721x which provide
higher current support is the implementation of parametric measurement unit (PMU) in the semiconductor
automatic test equipment (ATE) application.
In Automated Test Equipment (ATE) systems, the Parametric Measurement Unit (PMU) is tasked to measuredevice (DUT) parametric information in terms of voltage and current. When measuring voltage, current isapplied at the DUT pin, and current range adjustment can be done through changing the value of the internalsense resistor. There is sometimes a need, depending on the DUT, to use even higher testing current thannatively supported by the system. A 4 channel SPST switch, together with external higher current amplifier andresistor, can be used to achieve the flexibility. The PMU operating voltage is typically in mid voltage (up to 20
V). An appropriate switch like the TMUX721x with low leakage current (0.05 nA typical) works well in theseapplications to ensure measurement accuracy and low RON and flat RON_FLATNESS allows the current range
to be controlled more precisely. Below shows a simplified diagram of such implementations in memory andsemiconductor test equipment.

EN

DAC

+

High
Current
Amplier

Force
Amplier

EN

DAC

+

Force
Amplier
DUT

DUT
–

MeasureCurrent
Amplier

High
Current
Amplier–

MeasureCurrent
Amplier

+

+
–

–

+

+
ADC

ADC
MeasureVoltage
Ampli er–

MeasureVoltage
Amplier–

External Sense Resistor

Internal Sense Resistor

Figure 7-7. High Current Range Selection Using External Resistor

7.7 Fault Protection in Factory Automation Control Systems
The need to monitor remote sensors is common among factory automation control systems. For example, ananalog input module or mixed module (AI, AO, DI, and DO) of a programmable logic controller (PLC) willinterface to a field transmitter to monitor various process sensors at remote locations around the factory. A
switch or multiplexer, such as the TMUX7462F, is often used to connect multiple inputs from the system andreduce the number of downstream channels.
There are a number of fault cases that may occur that can be damaging to many of the integrated circuits. Suchfault conditions may include, but are not limited to, human error due to miswiring, component failure, wire shorts,
electromagnetic interference (EMI), transient disturbances, and more.

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PLC Anaog Input / Output Module

Field Module
Fault
Protected
Mux Inputs

TMUX7462F+24V

VDD VSS
Wire
Short

Fault!

Analog Input
Signals

Analog Output
Signals

High voltageoset shi

+15V
–
+
-15V

+15V -15V+10V -10V
VFP VFN

S1

D1

S2

D2

S3

D3

DAC
+10V
+
-10V

+10V

Fault!

S4

D4

V

VSenseVOUT DAC

+
-10V

IN1
ADC
IN2

Does not require logic control
pins from MCU/processor

Figure 7-8. Fault Protection in Factory Automation Control Systems

7.8 Sample and Hold Circuitry
One useful application to take advantage precision performance in devices such as the TMUX6121, TMUX6122,
and TMUX6123 is the sample and hold circuit. A sample and hold circuit can be useful for an analog to digitalconverter (ADC) to sample a varying input voltage with improved reliability and stability. It can also be used tostore the output samples from a single digital-to-analog converter (DAC) in a multi-output application. A simple
sample and hold circuit can be realized using an analog switch like one of the TMUX6121, TMUX6122, andTMUX6123 analog switches.
+15V

-15V

VDD

VSS

CH
+15V
+
VIN1

SW1

+15V

CC

+

OPA2192

VOUT

RC
–

OPA2192
–
-15V

SW2
SEL1/
SEL2

-15V
CH
GND

TMUX612x

Figure 7-9. A Sample and Hold Circuit Realized Using the TMUX611x Analog Switch

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Summary

8 Summary
Factors that go into selecting a signal switch can be numerous (low ron, low leakage, channel count, switch
configuration, powered- off protection, and so forth). This application report has presented the various TI signalswitch architecture, highlighted the key features and examples of protection, precision and general-purpose
switches and multiplexers to support end-to-end signal chain needs and provided example applications ofswitches to aid the designer in selecting the right TI signal switch.

9 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (December 2021) to Revision E (June 2022)
Page• Updated Application Note with new TMUX40xx (TMUX4051, TMUX4052, TMUX4053) signal switches andmultiplexers.........................................................................................................................................................1
Changes from Revision C (August 2021) to Revision D (December 2021)
Page• Updated Behavioral Model of CMOS (FET) Switch title..................................................................................... 4• Added CF description......................................................................................................................................... 4• Updated Digital and Analog switch definitions....................................................................................................9• Deleted Bus Switch definition............................................................................................................................. 9• Updated topic title............................................................................................................................................. 10• Updated with newer devices throughout publication........................................................................................ 10• Added Integrated Pulldown on Logic Pins topic............................................................................................... 10• Updated with newer devices throughout publication........................................................................................ 10• Updated Source and Drain on Capacitance image.......................................................................................... 10• Added Latch-up Immunity.................................................................................................................................10• Updated Propagation Delay definition.............................................................................................................. 10• Updated Fail-safe logic with example devices..................................................................................................10• Updated Analog Precision Switches and Multiplexers table.............................................................................17• Updated Protection Switches and Multiplexers topic adding new protection devices...................................... 17• Updated Analog Protection Switches and Multiplexers table .......................................................................... 17• Updated General-Purpose Switches and Multiplexers table ........................................................................... 22• Updated Automotive Switches and Multiplexers – AECQ100 table .................................................................23• Updated Switches and Multiplexers Performance in Digital Signal Applications title ...................................... 24• Added Multiplexing Signals to External ADC topic........................................................................................... 26• Added Multiplexing Signals to External ADC in Fault Sensitive Conditions topic.............................................27• Added High Current Range Selection Using External Resistor topic............................................................... 29• Added Fault Protection in Factory Automation Control Systems topic............................................................. 29• Added Sample and Hold Circuitry topic............................................................................................................ 30
Changes from Revision B (April 2020) to Revision C (August 2021)
Page• Updated the numbering format for tables, figures, and cross-references throughout the publication................ 4
Changes from Revision A (March 2020) to Revision B (April 2020)
Page• Updated Figure 27: Switchable Op Amp Gain Setting .....................................................................................27
Changes from Revision * (October 2001) to Revision A (March 2020)
Page• Updated Application Note with new TMUX signal switches and multiplexers.................................................... 1

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Appendix A

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A Appendix A
A.1 Analog Performance – CD, HC, CBT, LVC, and LV
Table A-1. VCC Above 5.5 V
Parameter (1)

(1)
(2)
(3)

Better Performance

RON(typical to maximum)

CD74HC4066
15-126 Ω

CD74HC4066(2)30 ΩCD4066200-550 Ω

RON (peak)(typical to maximum)

SN74HC4066(2)50 Ω (typical)

CD74HC4066
not specified

CD4066not specified

Frequency response

CD74HC4066(3)200 MHz

CD406640 MHzSN74HC4066(3)30 MHz

THD/Sine-wave distortion

CD74HC4066
0.008%

SN74HC4066(3)0.05%CD4066
0.4%

Crosstalk(enable to output)

SN74HC4066
20 mV

CD406650 mV

CD74HC4066
550 mV

Crosstalk(between switches)

CD4066-50 dB at 8 MHz

CD74HC4066(3)-72 dB at 1 MHz

SN74HC4066(3)-45 dB at 1 MHz

Feedthrough attenuation

CD74HC4066(3)-72 dB at 1 MHz

CD4066-50 dB at 1 MHz

SN74HC4066(3)-42 dB at 1 MHz

Data are based on data-sheet parameters for the parts tested for this application report. Refer to the respective data sheets for specificparameters and load conditions.
Specification at VCC = 6 V.
Specification at VCC = 4.5 V.

Table A-2. VCC = 4.5 V
Parameter (1)Better Performance

RON(typical to maximum)

LVC1G66
3-10 Ω

CBT3125(2)5-15 Ω

LV4066A
21-100 Ω

CD74HC/
HCT4066
25-142 Ω

SN74HC4066
50-106 Ω

CBT3125(3)5-1000 Ω

RON (peak)(typical to maximum)

CBT3125(2) (3)10 Ω

LVC1G66
6-15 Ω

LV4066A
31-125 Ω

CD74HC/
HCT4066(3)50-70 Ω

SN74HC4066
70-215 Ω

CBT3125(3)1000 Ω

Frequency response

CBT3125(2) (3)>200 MHzLVC1G66
195 MHz

CD74HC/
HCT4066(4)200 MHz

LV4066A
50 MHzSN74HC4066
30 MHz

THD/Sine-wave distortion

LVC1G66
0.01%

CD74HC/
HCT4066
0.023%

CBT3125(2) (3)0.035%

SN74HC4066
0.05%

LV4066A
0.1%

Crosstalk(enable to output)

SN74HC4066
15 mV

LV4066A
50 mV

LVC1G66
100 mV

CBT3125(3)120 mV

CD74HCT4066
130 mV

Crosstalk(between switches)

CD74HC/HCT4066-72 dB

LVC2G66-58 dB

CBT3125(2) (3)-53 dB

SN74HC4066-45 dB

LV4066A-45 dB

Feedthrough attenuation

CD74HC/HCT4066-72 dB

LVC1G66-58 dB

SN74HC4066-42 dB

LV4066A-40 dB

CBT3125(3)-36 dB

(1)
(2)
(3)
(4)

CD74HC4066
200 mV

Data are based on data-sheet parameters for the parts tested for this application report. Refer to the respective data sheets for specificparameters and load conditions.
CBT3125, 0 ≤ VI/O≤ (VCC - 2 V).
Value from application report measurement. Not specified in data sheet.
Ranked here due to load variation from other devices in this report.

Table A-3. VCC = 3 V

32

Parameter (1)Better Performance

RON(typical to maximum)

LVC1G666-15 Ω

CBTLV31255-15 Ω

LV4066A29-190 Ω

CD74HC4066(2)Not
specified

SN74HC4066(2)Not
specified

RON (peak)(typical tomaximum)

CBTLV3125(3)15-20Ω

LVC1G6612-20 Ω

LV4066A57-225 Ω

CD74HC4066(2)Not
specified

SN74HC4066(2)Not
specifiedFrequency response

CBTLV3125(3)>200
MHz

LVC1G66175 MHz

CD74HC4066(2)Not
specified

LV4066A35MHz

SN74HC4066(1)Not
specifiedSelecting the Correct Texas Instruments Signal Switch
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Table A-3. VCC = 3 V (continued)
Parameter (1)Better Performance

THD/Sine-wave distortion

LVC1G660.015%

CD74HC4066(2)Not
specified

Crosstalk(enable to output)

SN74HC4066(2)Not
specified

LV4066A20 mV

LVC1G6670 mV

CBTLV3125(3)70 mV

CD74HC4066(2)Not
specified

Crosstalk(between switches)

CD74HC4066(2)Not
specified

LVC2G66-58 dB

CBTLV3125(3)-49 dB

SN74HC4066(2)Not
specified

LV4066A-45 dB

Feedthrough attenuation

CD74HC4066(2)Not
specified

LVC1G66-58 dB

CBTLV3125-52 dB

SN74HC4066(2)Not
specified

LV4066A-40 dB

(1)
(2)
(3)

SN74HC4066(2)Not
CBTLV3125(3)0.09%
specified

LV4066A0.1%

Data are based on data-sheet parameters for the parts tested for this application report. Refer to the respective data sheets for specificparameters and load conditions.
Position in table based on estimated performance. Information not specified in data sheet.
Value from application report measurement. Not specified in data sheet.

Table A-4. VCC = 2.5 V
Parameter (1)Better Performance

RON(typical to maximum)

LVC1G66
9-20 Ω

CBTLV3125
5-40 Ω

LV4066A
38-225 Ω

CD74HC4066(2)Not specified

SN74HC4066(3)150 Ω

RON (peak)(typical tomaximum)

CBTLV3125(4)15-45 Ω

LVC1G66
20-30 Ω

LV4066A
143-600 Ω

CD74HC4066(2)Not specified

SN74HC4066(3)320 ΩFrequency response

CBTLV3125(4)>200 MHzLVC1G66
120 MHz

CD74HC4066(2)Not specified

LV4066A
30 MHzSN74HC4066(2)Not specified

THD/Sine-wave distortion

LVC1G66
0.025%

CD74HC4066(2)Not specified

SN74HC4066(2)Not specified

LV4066A
0.1%

CBTLV3125(4)0.11%Crosstalk(enable to output)

SN74HC4066(2)Not specified

LV4066A
15 mV

CBTLV3125(2)30 mV

LVC1G66
50 mV

CD74HC4066(2)Not specified

Crosstalk(between switches)

CD74HC4066(2)Not specified

LVC2G66-58 dBCBTLV3125-45 dB

SN74HC4066(2)Not specified

LV4066A-45 dB

Feedthrough attenuation

CD74HC4066(2)Not specified

LVC1G66-58 dBCBTLV3125-52 dB

SN74HC4066(2)Not specified

LV4066A-40 dB

(1)
(2)
(3)
(4)

Data are based on data-sheet parameters for the parts tested for this application report. Refer to the respective data sheets for specificparameters and load conditions.
Position in table based on estimated performance. Information not specified in data sheet.
Data at VCC = 2 V.
Value from application report measurement. Not specified in data sheet.

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A.2 SN74CBT Characteristics
10000

ron

1000

100

85°C

10

25°C
−40°C
1
0

1

2

3

4

5

VI

Figure A-1. Log ron vs VI, VCC = 5 V (SN74CBT3125)
30

25

ron

20

15

85°C
25°C
10

−40°C
5

0
0

0.5

1

1.5

2

2.5

3

3.5

4

VI

Figure A-2. ron vs VI, VCC = 5 V (SN74CBT3125)

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Appendix A

4.5

−40°C
4

25°C

3.5

85°C

3

VO

2.5

2
1.5

1
0.5

0
0

1

2

3

4

5

VI

Figure A-3. VI vs VO, VCC = 5 V (SN74CBT3125)
Table A-5. SN74CBT3125 Analog Parameter Measurement Data
VCC (1)5V(1)Frequency
Response>200 MHz

Sine-Wave
Distortion

Total Harmonic
Distortion
1 kHz

0.035%

Crosstalk
Between Switches

Enable to Output-53 dB

120 mV

0.15%

ChargeInjection

Feedthrough7.2 pC-36 dB

Postcharacterization measurement for SN74CBT3125

A.3 CD74HCT Characteristics
5

−55°C
4.5

25°C

4

125°C

3.5

VO

3
2.5
2
1.5
1
0.5
0
0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

VI

Figure A-4. VI vs VO, VCC = 5 V (CD74HCT4066)

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80

70

60

50

ron

125°C
40

25°C
30

−55°C
20

10

0
0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

VI

Figure A-5. ron vs VI, VCC = 5 V (CD74HCT4066)
Table A-6. CD74HCT4066 Analog Parameter Measurement Data
VCC (1)
4.5 V
(1)
(2)

Frequency
Response
200 MHz

Total Harmonic
Distortion

Crosstalk

1 kHz

Between Switches

Enable to Output

0.023%-72 dB

130 mV

Charge Injection(2)Feedthrough8.1 pC-72 dB

Data-sheet values for CD74HCT4066, except as noted.
Post-characterization measurement for CD74HCT4066.

A.4 CD74HC Characteristics
5.0

−55°C
25°C
125°C

4.0

VO

3.0

2.0

1.0

0.0
0

1

2

3

4

5

VI

Figure A-6. VI vs VO, VCC = 4.5 V (CD74HC4066)

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Appendix A
60.0

50.0

ron

40.0

30.0

125°C
25°C

20.0

−55°C

10.0

0.0
0

1

2

3

4

5

VI

Figure A-7. ron vs VI, VCC = 4.5 V (CD74HC4066)
6.0

−55°C
25°C

5.0

125°C

VO

4.0

3.0

2.0

1.0

0.0
0

1

2

3

4

5

6

VI

Figure A-8. VO vs VI, VCC = 6 V (CD74HC4066)

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40.0

35.0

30.0

125°C
25.0

ron

25°C
20.0

−55°C
15.0

10.0

5.0

0.0
0

1

2

3

4

5

6

VI

Figure A-9. ron vs VI, VCC = 6 V (CD74HC4066)
9.0

−55°C
8.0

25°C

7.0

125°C

6.0

VO

5.0

4.0

3.0

2.0

1.0

0.0
0

1

2

3

4

5

6

7

8

9

VI

Figure A-10. VO vs VI, VCC = 9 V (CD74HC4066)

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Appendix A
30.0

25.0

125°C

20.0

ron

25°C
15.0

−55°C
10.0

5.0

0.0
0

1

2

3

4

5

6

7

8

9

VI

Figure A-11. ron vs VI, VCC = 9 V (CD74HC4066)
Table A-7. CD74HC4066 Analog Parameter Measurement Data
VCC (1)Frequency
Response

Total Harmonic Distortion
1 kHz

Between Switches

Enable to Output

4.5 V

200 MHz0.022%-72 dB

9V

200 MHz0.008%

N/A

(1)
(2)

Crosstalk

Charge Injection(2)Feedthrough200 mV

6.2 pC-72 dB

550 mV

9.0 pC

N/A

Data-sheet values for CD74HC4066, except as noted.
Post characterization measurement for CD74HC4066.

A.5 SN74HC Characteristics
2

−40°C

1.8

25°C

1.6

85°C

1.4

VO

1.2

1

0.8

0.6

0.4

0.2

0
0

0.5

1

1.5

2

VI

Figure A-12. VO vs VI, VCC = 2 V (SN74HC4066)

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350

300

250

ron

200

150

85°C
25°C
−40°C

100

50

0
0

0.5

1

1.5

2

VI

Figure A-13. ron vs VI, VCC = 2 V (SN74HC4066)
5

−40°C
25°C
85°C

4

VO

3

2

1

0
0

1

2

3

4

5

VI

Figure A-14. VO vs VI, VCC = 4.5 V (SN74HC4066)

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Appendix A
80

70

60

85°C
25°C

50

ron

−40°C
40

30

20

10

0
0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

VI

Figure A-15. ron vs VI, VCC = 4.5 V (SN74HC4066)
7

−40°C
25°C
6

85°C
5

VO

4

3

2

1

0
0

1

2

3

4

5

6

VI

Figure A-16. VO vs VI, VCC = 6 V (SN74HC4066)

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60

85°C

50

25°C
40

ron

−40°C

30

20

10

0
0

1

2

3

4

5

6

VI

Figure A-17. ron vs VI, VCC = 6 V (SN74HC4066)
Table A-8. SN74HC4066 Analog Parameter Measurement Data
VCC (1)Frequency
Response

Sine-Wave Distortion

Crosstalk

1 kHz

Between Switches

Enable to Output

Charge Injection(2)Feedthrough

2V

N/A

N/A

N/A

N/A

3.8 pC

N/A

4.5 V

30 MHz0.05%-45 dB15 mV

5.9 pC-42 dB

6V

N/A

N/A

N/A

20 mV

7.9 pC

N/A

(1)
(2)

Data-sheet values for SN74HC4066, except as noted.
Post characterization measurement for SN74HC4066.

A.6 CD4066B Characteristics
5

−55°C
4.5

25°C

4

125°C

3.5

VO

3
2.5
2
1.5
1
0.5
0
0

1

2

3

4

5

VI

Figure A-18. VO vs VI, VCC = 5 V (CD4066B)

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Appendix A
600

500

125°C
400

ron

25°C
300

−55°C
200

100

0
0

1

2

3

4

5

VI

Figure A-19. ron vs VI, VCC = 5 V (CD4066B)
10

−55°C
25°C

9

125°C

8

7

VO

6

5

4

3

2

1

0
0

2

4

6

8

10

VI

Figure A-20. VO vs VI, VCC = 10 V (CD4066B)

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300

250

125°C
200

ron

25°C
150

−55°C
100

50

0
0

2

4

6

10

8

VI

Figure A-21. ron vs VI, VCC = 10 V (CD4066B)
16

−55°C
25°C

14

125°C
12

VO

10

8

6

4

2

0
0

2

4

6

8

10

12

14

16

VI

Figure A-22. VO vs VI, VCC = 15 V (CD4066B)

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Appendix A
200

180

125°C
160

140

25°C
ron

120

100

−55°C
80

60

40

20

0
0

2

4

6

10

8

12

14

16

VI

Figure A-23. ron vs VI, VCC = 15 V (CD4066B)
Table A-9. CD4066B Analog Parameter Measurement Data
VCC/VSS (1)Frequency
Response

Total Harmonic Distortion
1 kHz

Between Switches

Enable to Output

5 V/-5 V

40 MHz0.04%-50 dB at 8 MHz

50 mV

10 V/0 V

141 MHz(2)0.032%(2)-75 dB(2)35 mV(2)(1)(2)

Crosstalk

ChargeInjection(2)Feedthrough-50 dB at 1 MHz

18.8 pC-65 dB(2)Data-sheet values for CD4066B, except as noted.
Post characterization measurement for CD4066B. Frequency response, THD, crosstalk, and feedthrough measured using loadconditions specified in Appendix A, in order to make a more valid comparison with other devices in this report.

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A.7 LV-A Characteristics
2.5

−40°C
25°C
85°C

2

VO

1.5

1

0.5

0
0.5

0

1.5

1

2

VI

Figure A-24. VO vs VI, VCC = 2 V (SN74LV4066A)
400

350

−40°C
300

25°C

ron

250

85°C

200

150

100

50

0
0

0.5

1.5

1

2

2.5

VI

Figure A-25. ron vs VI, VCC = 2 V (SN74LV4066A)

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Appendix A
3

−40°C
25°C
2.5

85°C

VO

2

1.5

1

0.5

0
0.5

0

1.5

1

2.5

2

3

VI

Figure A-26. VO vs VI, VCC = 2.5 V (SN74LV4066A)
100

90

80

70

ron

60

50

85°C

40

25°C
30

−40°C
20

10

0
0

0.5

1

1.5

2

2.5

VI

Figure A-27. ron vs VI, VCC = 2.5 V (SN74LV4066A)

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3.5

−40°C
25°C

3

85°C
2.5

VO

2

1.5

1

0.5

0
0

0.5

1

1.5

2

2.5

3

3.5

VI

Figure A-28. VO vs VI, VCC = 3.3 V (SN74LV4066A)
60

50

ron

40

85°C

30

25°C
−40°C

20

10

0
0

0.5

1

1.5

2

2.5

3

3.5

VI

Figure A-29. ron vs VI, VCC = 3.3 V (SN74LV4066A)

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Appendix A
5

−40°C
25°C
4

85°C

VO

3

2

1

0
0

1

2

3

4

5

VI

Figure A-30. VO vs VI, VCC = 5 V (SN74LV4066A)
30

25

85°C

ron

20

25°C
−40°C

15

10

5

0
0

1

2

3

4

5

VI

Figure A-31. ron vs VI, VCC = 5 V (SN74LV4066A)
Table A-10. SN74LV4066A Analog Parameter Measurement Data
VCC (1)Frequency
Response

Sine-Wave Distortion
1 kHz

Between Switches

Enable to Output

ChargeInjection(2)Feedthrough

2.3 V

30 MHz0.1%-45 dB

15 mV

2.1 pC-40 dB

3V

35 MHz0.1%-45 dB20 mV

2.7 pC-40 dB

4.5 V

50 MHz0.1%-45 dB50 mV

3.0 pC-40 dB(1)(2)

CrosstalkData-sheet values for SN74LV4066A, except as noted.
Post characterization measurement for SN74LV4066A.

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A.8 LVC Characteristics
2

−40°C
25°C
85°C

VO

1.5

1

0.5

0
0

1

2

VI

Figure A-32. VO vs VI, VCC = 1.8 V (SN74LVC1G66)
110

90

−40°C
70

ron

25°C
85°C

50

30

10

0

1

2

VI

Figure A-33. ron vs VI, VCC = 1.8 V (SN74LVC1G66)

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Appendix A
3

−40°C
25°C
2.5

85°C

VO

2

1.5

1

0.5

0
0

1

2

3

VI

Figure A-34. VO vs VI, VCC = 2.5 V (SN74LVC1G66)
20

15

ron

85°C
10

25°C
−40°C
5

0
0

1

2

3

VI

Figure A-35. ron vs VI, VCC = 2.5 V (SN74LVC1G66)

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3

−40°C
25°C
2.5

85°C

VO

2

1.5

1

0.5

0
0

1

2

3

VI

Figure A-36. VO vs VI, VCC = 3.3 V (SN74LVC1G66)
15

10

85°C
ron

25°C
−40°C

5

0
0

2

4

VI

Figure A-37. ron vs VI, VCC = 3.3 V (SN74LVC1G66)

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Appendix A
6

−40°C
25°C
5

85°C

VO

4

3

2

1

0
0

1

2

3

4

5

6

VI

Figure A-38. VO vs VI, VCC = 5 V (SN74LVC1G66)
8

85°C
7

25°C
6

ron

5

4

3

−40°C

2

1

0
0

1

2

3

4

5

VI

Figure A-39. ron vs VI, VCC = 5 V (SN74LVC1G66)
Table A-11. SN74LVC1G66 Analog Parameter Measurement Data

(1)
(2)

Sine-Wave Distortion

VCC (1)Frequency
Response

1 kHz

10 kHz

CrosstalkEnable to
OutputChargeInjection(2)Feedthrough

1.8 V

35 MHz

0.1%

0.15%

35 mV

2.5 pC-42 dB

2.5 V

120 MHz0.025%

0.025%

50 mV

3.0 pC-42 dB

3V

175 MHz0.015%

0.015%

70 mV

3.3 pC-42 dB

4.5 V

195 MHz

0.01%

0.01%

100 mV

3.5 pC-42 dB

Data-sheet values for SN74LVC1G66, except as noted.
Post characterization measurement for SN74LVC1G66.

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A.9 CBTLV Characteristics
3

−40°C
25°C
85°C

VO

2

1

0
0

1

2

3

VI

Figure A-40. VO vs VI, VCC = 2.5 V (SN74CBTLV3125)
12

10

85°C
25°C

ron

8

6

−40°C

4

2

0
0

0.5

1

1.5

2

2.5

3

VI

Figure A-41. ron vs VI, VCC = 2.5 V (SN74 CBTLV3125)

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Appendix A
4

−40°C
25°C
85°C

VO

3

2

1

0
0

1

2

3

4

VI

Figure A-42. VO vs VI, VCC = 3.3 V (SN74CBTLV3125)
10

9
8
7

85°C

ron

6
5

25°C

4

−40°C
3
2
1
0
0

1

2

3

4

VI

Figure A-43. ron vs VI, VCC = 3.3 V (SN74CBTLV3125)
Table A-12. SN74CBTLV3125 Analog Parameter Measurement Data
VCC (1)(1)Frequency
Response

Sine-Wave
Distortion

Total Harmonic
Distortion

1 kHz

1 kHz

Between Switches

Enable to Output

Crosstalk

ChargeInjection

Feedthrough

2.5 V>200 MHz0.089%

0.11%-45 dB

30 mV

12.1 pC-52 dB

3.3 V>200 MHz

0.033%

0.09%-49 dB

70 mV

15.5 pC-52 dB

Post characterization measurement for CBTLV3125.

SZZA030E – AUGUST 2021 – REVISED JUNE 2022
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Selecting the Correct Texas Instruments Signal Switch
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