Complementary MOSFET (common drain)
ELM55616CA-S■General description

http://www.elm-tech.com■Features

ELM55616CA-S uses advanced trenchtechnology to provide excellent Rds(on),low gate charge and low gate thresholdvoltage.

N-channel

P-channel• Vds=60V• Id=7.0A• Rds(on) = 34mΩ(Vgs=10V)• Rds(on) = 40mΩ(Vgs=4.5V)■Maximum absolute ratings
Parameter

SymbolVds

Drain-source voltage
Gate-source voltage

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit60-60VVgs

Continuous drain current(Tj=150°C)

Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C

Power dissipation±207.06.0±20-7.0
-6.0

VIdm

30-30

A

Pd

2.8
1.8

2.8
1.8

W

TjTstg150-55 to 150

150-55 to 150°C
°C

Max.
62.5
62.5

Unit°C/W°C/W

Id

Pulsed drain current

Operating junction temperature
Storage temperature range• Vds=-60V• Id=-7.0A• Rds(on) = 56mΩ(Vgs=-10V)• Rds(on) = 68mΩ(Vgs=-4.5V)

A■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolRθja
RθjaDevice
N-chP-ch■Pin configuration■Circuit

TO-252-4(TOP VIEW)
TAB

1 23 4Typ.

• N-chPin No.
12Pin name
SOURCE1
GATE1

34
TAB

SOURCE2GATE2DRAIN1/DRAIN2• P-chRev.1.0
1/ 8

Complementary MOSFET (common drain)
ELM55616CA-S

http://www.elm-tech.com■Electrical characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit

Condition

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain currentIdssVds=60V, Vgs=0V

60
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=4.5V, Vds≥5V30

Static drain-source on-resistanceRds(on)

μA

±100
2.5nA
V
A

25
30

Vds=15V, Id=5.3A
Is=2A, Vgs=0V24
0.8

Vgs=0V, Vds=25V, f=1MHz

700
150

pF
pF

70

pF

Gfs
VsdIs

Input capacitance
Output capacitance

CissCossReverse transfer capacitance
SWITCHING PARAMETERSTotal gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise time

trRL=1.3Ω, Id≡23.0A
td(off)Rgen=1.0Ω
tf

Turn-off delay timeTurn-off fall time15

Vgs=10V, Id=7.0A
Vgs=4.5V, Id=6.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

Vgs=4.5V, Vds=30V
Id≡23.0A
Vgs=10V, Vds=30V

7.034401.3
1.5

15.0mΩ
SVAnC

3.2nC

3.2
1020nC
ns

15303065nsns2550ns

Rev.1.0
2/ 8

AFC5616

Alfa-MOS

60V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55616CA-S■Typical electrical and thermal characteristics (N-ch)

http://www.elm-tech.com

Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Apr. 2016www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

AFC5616

Alfa-MOS

60V N & P Pair
TechnologyMode MOSFET(common drain)
Complementary MOSFETEnhancement
ELM55616CA-S
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Apr. 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 5Rev.1.04/ 8Complementary MOSFET (common drain)
ELM55616CA-S

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. UnitConditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-48V, Vgs=0V-60
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds≥-5V-30

Static drain-source on-resistanceRds(on)4656

Vds=-15V, Id=-3.2A
Is=-3A, Vgs=0V

12-0.8

Vgs=0V, Vds=-25V, f=1MHz

1200
140

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
CossReverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise timetr
Id=-18.0A, RL=3.0Ω
td(off)Rgen=2.5Ω
tf

Turn-off delay timeTurn-off fall time-1-20

μA±100-2.5nA
VA

Vgs=-10V, Id=-7.0A
Vgs=-4.5V, Id=-6.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERSQg

V5668-1.3-1.7
2000

90
Vgs=-10V, Vds=-30V
Id=-10.0A
Vgs=-10V, Vds=-30V

25mΩ
SVA
pF
pF
pF

40

nC

5nC

81020nC
ns

1045

2080

nsns

2540

ns

Rev.1.05/ 8AFC5616

Alfa-MOS

60V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55616CA-Selectrical(andthermal )characteristics (P-ch)
Typical■TypicalCharacteristics
P-Channel©Alfa-MOS Technology Corp.
Rev.A Apr. 2016

http://www.elm-tech.com

www.alfa-mos.com
Rev.1.0
Page 6

6/ 8

AFC5616

Alfa-MOS

60V N & P Pair
Enhancement Mode MOSFET
Complementary MOSFET (common drain)

Technology

ELM55616CA-S
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A Apr. 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 8

AFC5616

Alfa-MOS

60V N & P Pair
TechnologyMode MOSFET(common drain)
Complementary MOSFET Enhancement
ELM55616CA-S
Typical■Test
Characteristics
circuit and waveform©Alfa-MOS Technology Corp.
Rev.A Apr. 2016

http://www.elm-tech.com

www.alfa-mos.com
8/ 8

Rev.1.0
Page 8