2-30 GHz Surface Mount Low Phase Noise Amplifier

APM-6849SM

1. Device Overview
1.1 General Description
The APM-6849SM is a single stage broadband, low phase noise LO driver
amplifier designed to provide saturated +21 dBm output power, packaged in a
3 mm QFN. This amplifier uses GaAs HBT technology for low phase noise, andprovides industry leading -170 dBc/Hz at 10 kHz offset from carrier
frequency. The amplifier is also highly efficient with 21% peak PAE at 5 GHz
input frequency and low DC current draw. It is optimized to provide enoughpower to drive the LO port of an S-diode mixer (2 – 20 GHz) or an H/L-diodemixer (2 - 32 GHz). This amplifier is operational with a variety of bias conditions
for both low and high-power applications.

1.3 Applications

1.2 Features
▪
▪
▪
▪
▪
▪

▪

-170 dBc/Hz phase noise at 10 kHz
offset frequency
Low DC power consumption
Positive-only biasing
No sequencing required
Unconditionally stable
Integrated DC blocks – No bias-teesor off-chip blocking required▪
▪
▪
▪

Mobile test and measurement
equipment
Radar and satellite communications
5G Transceivers
Driver amplifier for S, H, and L –diode mixers
Suitable as a T3 mixer driver

1.4 Functional Block Diagram+VC

RF Output

RF Input+VB

1.5 Part Ordering Options1
PartNumber
APM-6849SM
EVAL-APM6849SM
1

Description
3x3 mm Surface
Mount
Connectorized
Evaluation Fixture

Package

Green Status

ProductLifecycle

ExportClassification

QFN

RoHS

Active

EAR99

EVAL

RoHS

TBD, Contact
Support

EAR99

Refer to our website for a list of definitions for terminology presented in this table.

Copyright © 2019 Marki Microwave, Inc.

Page 1|Rev.-www.markimicrowave.com3.4 Sequencing Requirements ............... 5

Table of Contents
1.

3.5 Electrical Specifications .................. 6
3.6 APM-6849SM Typical Performance
Plots ................................................... 7

Device Overview ............................... 1
1.1 General Description ........................ 1

3.7 Connectorized Module APM-6849PAPerformance Plots ................................ 9

1.2 Features ....................................... 1
1.3 Applications ................................... 1
1.4 Functional Block Diagram ................ 1

3.8 Conversion Loss Plots of Marki Mixers
Using APM-6849SM LO Driver ........... 10

1.5 Part Ordering Options ..................... 13.9 Time Domain Plots ........................ 102. APM-6849SM Port Configurations andFunctions ............................................... 34.

2.1 APM-6849SM Port Diagram ........... 35.

2.2 APM-6849SM Port Functions ......... 33.

APM-6849

Application Information .................... 11
4.1 APM-6849SM Application Circuit .. 11
Mechanical Data ............................. 12Specifications ................................... 4

5.1 APM-6849SM Package Outline
Drawing ............................................ 12

3.1 Absolute Maximum Ratings .............. 4

5.2 APM-6849SM Landing Pattern ..... 12

3.2 Package Information ....................... 43.3 Recommended Operating Conditions . 5

Revision History
Revision Code-Revision DateNovember 2019Copyright © 2019 Marki Microwave, Inc.

CommentDatasheet Initial Release

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2. APM-6849SM Port Configurations and Functions
2.1 APM-6849SM Port Diagram
A port diagram of the APM-6849SM is shown below.
16151314+VC

121RF Output

RF Input
21131094+VB

5678

2.2 APM-6849SM Port Functions
PortFunction

Description

2RF Input

This is the amplifier die RF Input port. It isinternally DC blocked and RF matched to50 Ω.

14Collector SupplyPort

Pin 14 is the amplifier IC’s DC voltage
supply pad. See section 3.6 forperformance at different bias conditions.

6Base Supply
Port

11RF Output

GND

GroundEquivalent Circuitfor Package

Pin 6 is the current mirror DC voltage
supply port that controls the collector
current supplied to the amplifier. VB port
voltage is proportional to VC port collector
current. VB effectively functions as a gain
control pin. See section 3.6 forperformance at different bias conditions.
Pin 11 is the amplifier die RF Output port.
It is internally DC blocked and RF matched
to 50 Ω. Must have less than 7:1 VSWR
when operating with voltage greater than
5V on VC.
IC backside must be connected to a DC/RFground with high thermal and electricalconductivity.

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3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If
these limits are exceeded, the device may become inoperable or have a reduced lifetime.
Parameter

Maximum Rating

Units

Collector Positive Bias Voltage (VC)

7V

Positive Bias Current (Ic)

150mA

Current Mirror Positive Bias Voltage (VB)

7V

Current Mirror Positive Bias Current (Ib)

4mA

RF Input Power+20

dBm

Output Load VSWR

7:1-

Operating Temperature-40 to +125

˚C

Storage Temperature-65 to +150

˚C

TBD

˚C/W

𝜃JA

3.2 Package Information
Parameter

DetailsRating

ESD

Human Body Model (HBM), per MIL-STD-750, Method 1020

TBD

WeightEVAL-APM-6849SM

43.6

Copyright © 2019 Marki Microwave, Inc.

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3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should beoperated, to guarantee the performance given in Electrical Specifications Operating outside theselimits may not necessarily cause damage to the device, but the performance may degrade outside
the limits of the electrical specifications. For limits, above which damage may occur, see Absolute
Maximum Ratings.
MinNominalMax2Units

TA, Ambient Temperature-40+25+125°C

Positive DC Voltage (VC)+3+5+6V

Positive DC Current (Ic)

82132mA

Positive DC Current Mirror Voltage (VB)

+3+5+6V

Positive DC Current Mirror Current (Ib)

0.9

2

2.6mA

3.4 Sequencing Requirements
There is no sequencing required to power up or power down the amplifier.
Amplifier must have an output load connected when operating with a VC voltage greater than +5V.

2Maximum recommended operating current conditions without RF input applied. Please see
typical performance plots on page 9 for relationship between RF input power and DC currentdraw.

Copyright © 2019 Marki Microwave, Inc.

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3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system.
QFNs are 100% RF tested.

TestConditions
5V/5V
bias, Input
Driver(Seefootnote)

Parameter

Psat3

Small Signal Gain
Input Return Loss
Output Return Loss
Noise Figure

5V/5V
bias,
-25 dBm
Input
Power

Reverse Isolation

4Collector Current , Ic

Current Mirror Current, Ib

Input IP3 (IIP3)

Output IP3 (OIP3)
Output P1dB
Input Power forSaturation
Phase Noise @ 10 kHzOffset

Frequency

MinTypical

2 GHz – 20 GHz+19+2120 GHz – 30 GHz+15+192 GHz – 20 GHz
20 GHz – 30 GHz
2 GHz – 20 GHz
20 GHz – 30 GHz
2 GHz – 20 GHz
20 GHz – 30 GHz

97117.5
1581682 GHz – 26.5 GHz
2 GHz – 30 GHz

5V/4V
5V/5V
5V/6V
5V/4V
5V/5V
5V/6V
5V/5V
bias,-15 dBm
Input
Power
5V/5V
bias
5V/5V
bias
5V/5V
bias, +9dBm Input
power-2 GHz – 30 GHz

2 GHz – 30 GHz

UnitsdBm

dB542132132
1.52.02.6mA+11+20dBm

2 GHz – 20 GHz+20

20 GHz – 30 GHz+142 GHz – 30 GHz+10dBm-170

dBc/Hz2-20 GHz

3Saturated Output Power tested with two EVAL-APM-6849SM connected in series; +6 dBm RF
input power, corresponding to ~+16 dBm into DUT.
4Bias conditions for Ic and Ib tested with no RF input power. See section 3.6 for DC current vs.
RF power. Bias conditions presented as VC/VB.

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3.6 APM-6849SM Typical Performance Plots5
Small Signal Gain (dB) vs. Freqency, VC = 6 V

Saturated Output Power (dBm) vs. Frequency, VC = 6 V302025201518

VB = 3 V, Ic = 8 mA

16VB = 4 V, Ic = 14 mA

14

VB = 5 V, Ic = 21 mA

12

VB = 6 V, Ic = 33 mA

10810

VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V

5642000

51015
20Frequency (GHz)

2530

35

5101520Frequency (GHz)

2530

35

Small Signal Gain (dB) vs. Freqency, VC = 5 V

Saturated Output Power (dBm) vs. Frequency, VC = 5 V

30020
VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 33 mA

1825

161420121015810

VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V

56420005101520
Frequency (GHz)2530

Saturated Output Power (dBm) vs. Frequency, VC = 4 V

30

035-520-1015-15

1520
Frequency (GHz)

2530

3530

35

30

35

VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 33 mA-20

VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V

510Input Return Loss (dB) vs. Frequency, VC = 5 V025

105-25-3000

5101520Frequency (GHz)2530-2010152025

Output Return Loss (dB) vs. Frequency, VC = 5 V

0

VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 33 mA-105Frequency (GHz)

Reverse Isolation (dB) vs. Frequency, VC = 5 V0035

VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 33 mA-5-10-30-15-40-50-20-60-25-70-30-80
051015202530

Frequency (GHz)535

0510152025

Frequency (GHz)APM-6849SM measurements taken in EVAL-APM-6849 evaluation board.

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Harmonic Response (dBm) vs. Input Freq., 5V/5V Bias, +10 dBm P inOutput P1dB (dBm) vs. Frequency

3030252520152010515010Fundamental
2nd Harmonic
3rd Harmonic
4th Harmonic
5th Harmonic-5-105-150-2005101520Frequency (GHz)253005101520Input Frequency (GHz)

253035

Small Signal Gain (dB) Over Temperature vs. Frequency, 5V/5V Bias

Saturated Output Power Over Temperature, 5V/5V Bias

203018251614201210158-40 C
25 C
85 C
125 C

1050C65 C
100 C-40 C
25 C
85 C
125 C

6420C
65 C
100 C

0005101520
Frequency (GHz)2530

IIP3 (dBm) vs. Frequency, -15 dBm Input Power

305101520Frequency (GHz)

2530353035

OIP3 (dBm) vs. Frequency, -15 dBm Input Power

305V/5V

25035256V/6V

20201515101055005V/5V

05101520Frequency (GHz)

2530Copyright © 2019 Marki Microwave, Inc.

356V/6V

05101520Frequency (GHz)

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3.7 Connectorized Module APM-6849PA Performance Plots6Phase Noise (dBc/Hz) vs. Offset Frequency; 4 GHz Carrier
Frequency, 6V/6V Bias, +15 dBm Input Power-120

Noise Figure (dB) vs. Frequency, 5V/5V Bias
12-130

10-1408-170 dBc/Hz @10 kHz Offset-150

6-1604-170

2-180-190
10100

1000

10000

10000010000000051015Frequency (GHz)

Offset Frequency (Hz)Ic, Ib (mA) vs. VB (VC = 5 V)
3.513030

3110

25

2.520

2151.5Ic
Ic

101Ib

50.5

004

4.555.55 GHz
15 GHz28 GHz90Ib

3.57050
3010-206-15-10-5Gain, Output Power, and PAE vs. Input Power, 5V/5V, 5 GHz

2015151010550-5051015Output Power (dBm)
Gain (dB)
PAE (%)

2520-105Gain, Output Power, and PAE vs. Input Power, 5V/5V, 15 GHz

30Output Power (dBm)
Gain (dB)
PAE (%)

250RF Input Power (dBm)

VB (V)
3025Ic (mA) vs. RF Input Power, 5V/5V Bias

35

3201015Input Power (dBm)

200-10-50510Input Power (dBm)

15206Surface mount module APM-6849SM performance is expected to be similar to connectorized
module performance.

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3.8 Conversion Loss Plots of Marki Mixers Using APM-6849SM LO Driver
Marki MM1-0212H Conv. Loss (dB) using APM-6849SM LO Driver,
5V/5V Bias, +15 dBm input, 100 MHz IF Frequency

0Marki MM1-0312H Conv. Loss (dB) using APM-6849SM LO Driver,
5V/5V Bias, +15 dBm input, 100 MHz IF Frequency

0-2

Downconversion-2

Downconversion-4

Upconversion-4

Upconversion-6-6-8-8-10-10-12-12-14-14-16-16-18-18-20-2002468RF Frequency (GHz)

101214246810RF Frequency (GHz)

1214Marki MM1-0626H Conv. Loss (dB) using APM-6849SM LO Driver,5V/5V Bias, +15 dBm input, 100 MHz IF Frequency

0-2

Downconversion-4

Upconversion-6-8-10-12-14-16-18-20
4681012141618
RF Frequency (GHz)20222426

3.9 Time Domain Plots75 GHz, +10 dBm Pin, 5V/5V Bias

710 GHz, +10 dBm Pin, 5V/5V Bias

Fast rise time is desirable for linear T3 mixer operation.

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4. Application Information
4.1 APM-6849SM Application Circuit
Below is the recommended application circuit for the APM-6849SM.

VC
0.1 µF bypasscapacitor
GND

GND
50Ω trace50Ω trace

RF Out

RF In
GND

GND

VB
RF input and output should be soldered to 50 Ω traces. This is a single stage amplifier,and feedback oscillations are unlikely to occur. However, a bypass capacitance to ground on theVC supply line is recommended for consistent RF performance.

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APM-6849SM

5. Mechanical Data
5.1 APM-6849SM Package Outline Drawing

Notes:
1. Substrate Material is Plastic.
2. I/O Leads and Die Paddle are 0.05 microns Au over 0.02 microns Pd over 0.5 microns Ni.
3. All unconnected pins should be connected to PCB RF ground.

5.2 APM-6849SM Landing Pattern

PROJECTION

INCH
[MM]

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