Etchant agent

NIHON KAGAKU SANGYO.CO.,LTD.
http://www.nihonkagakusangyo.co.jp/

Item
Function

ApplicationsFeatures

Head Office
Phone +81-3-3876-3135
Fax +81-3-3876-0559

Nickel Selective Etchant-NC

Nickel Etchant-H

Copper Selective Etchant-CS

Copper Selective Etchant-CSD

Copper Selective Etchant-CSS

Alkaline Chromium Etchant

Nickel etchant

Nickel etchant

Copper etchant

Copper etchant

Copper etchant

Chromium etchant

Etchant for thin film nickel layer onsubstrate
・Sulfuric acid type.
・Superior etching selectivity.
・Etching nickel layer on mild
condition.
・Etching rate can be adjusted bytemperature and time.
・Easy analytical control undermoderate condition.

Etchant for chromium layer on
Etchant for nickel layer (high speed) Etchant for copper layer on substrate Etchant for copper layer on substrate Etchant for copper layer on substrate
substrate or photomask
・Hydrogen peroxide type.
・Hydrogen peroxide type.
・Hydrogen peroxide type.
・Hydrogen peroxide type.
・Superior etching selectivity.
・Superior etching selectivity.
・Superior etching selectivity.
・Superior etching selectivity.
・Superior etching selectivity.
・Substrate (polyimide film, silicon・Tenfold of Nickel Selective Etchant ・Etching copper layer on mild
・Etching copper layer on mild
・Etching copper layer on mild
wafer etc.) not damaged.
NC etching rate.
condition.
condition.
condition.
・Suitable for thick film and fast・Etching rate can be adjusted by・Etching rate can be adjusted by・Etching rate can be adjusted byetching.
temperature and time.
temperature and time.
temperature and time.
・Easy analytical control under・Stability of the hydrogen peroxide is ・Stability of the hydrogen peroxide is ・Stability of the hydrogen peroxide ismoderate condition.
excellent, so bath control is easy.
excellent, so bath control is easy.
excellent, so bath control is easy.
・High-speed and uniform etching is ・High-speed and uniform etching is ・High-speed and uniform etching ispossible.
possible.
possible.
・There is little under-cut. Etching to ・Superior etching selectivity allows
fine pattern is possible.
wide application.

Dissolved metal

Ni

Ni

Cu

Cu

Remained metal

Ti, Au, Al, Cr, Cu, Ag, etc.

Ti, Au, Al, Cr, Cu, W, Ag, etc.

Ti, Cr, Sn, W, Au, NiCr, SUS, etc.

Ti, Cr, W, Au, NiCr, SUS, Ag, Mo, etc.

Processing method

Dipping or rocking

Dipping or spray

Dipping or spray

Dipping or spray

Dipping or spray

Dipping

Bath temperature

45℃（Range 35-55℃）

30℃（Range 25-40℃）

25-40℃

25-40℃

25-40℃

25-45℃

Processing Time

Optional(adjusted by thickness of Ni)

Optional(adjusted by thickness of Ni)

Optional(adjusted by thickness of Cu)

Optional(adjusted by thickness of Cu)

Optional(adjusted by thickness of Cu)

Optional(adjusted by thickness of Cr)

Etching rate

0.2μm/min.(45℃)

3.5μm/min.(30℃)

3.0μm/min.(30℃)

1.4μm/min.(30℃)

1.75μm/min.(30℃)

80nm/min.(30℃)

Item

FLICKER-YL

FLICKER-MH

Etchant for Chromium

50%CAN Solution

The nickel activation liquid

Copper alloy chemical polisher CP-17

Function

Nickel-chromium etchant

Nickel-chromium etchant

Chromium etchantLiquid to remove nickel oxide film

Copper alloy chemical polisher

Removal of seed layer (Ni-Cr) ofmetallizing 2 layer CCL・Suitable for both Subtractive
process and Semi-additive process.
・FLICKER-YL can remove the seedlayer selectively without dissolving
most of copper.
・Bath control is easy.
・Stability of liquid is excellent.

Removal of seed layer (Ni-Cr) ofmetallizing 2 layer CCL
・Preferentially remove unetchednickel-chromium alloy by ironchloride or copper chloride.
・FLICKER-MH can remove the seedlayer selectively without dissolving
most of copper.
・Bath control is easy.
・Stability of liquid is excellent.

Etchant for chromium layer onsubstrate and photomask
・Etching to fine pattern is possible.
・Even when used repeatedly,
deterioration is small.
・Thermal stability is excellent.
・The content of impurities such as
heavy metals is extremely low.
・Particles are kept low due to
production in clean environment.

Dissolved metal

Ni, CrNi, CrCr

Cr

Nickel oxide film

Copper alloy

Remained metal

Cu

Cu

―――

―

Processing method

Dipping

Dipping or spray

Dipping or spray

Dipping

Dipping

Bath temperature

35-50℃

50-60℃

25-45℃

30℃（Range 25-35℃）

25-45℃

Processing Time30-120sec. (adjusted by thicknessof seed layer and substrate)

1～5min. (adjusted by thickness ofseed layer and substrate)

Optional(adjusted by thickness of Cr)

30-60sec. （In case of baked film
at 200 ℃ -30 min.）Optional(adjusted by thickness of Cu)

Applications

FeaturesEtching rate

0.2μm/min. (40℃)

Raw material or replenishment for
chromiun etchant
Raw material or replenishment for Cr
etchant on substrate or photomask

・Thermal stability is excellent.
・The content of impurities such as
heavy metals is extremely low.
・Particles are kept low due to
production in clean environment.
・Raw material or replenishment for
home-brew bath.

Cu
Ti, Cr, W, Au, NiCr, SUS, Ni, Sn, Ag,Mo, etc.

CrAu, Cu, Co, Ni, Pd, Si, Sn, Ta, Ti, etc.

Nickel oxide film remover. Adhesion Surface polisher, cleaning agent forenhancement of next plating process. copper alloy
・Removing oxide film for nickel is・Hydrogen peroxide type.
excellent. At the next process,・It clean the copper and copper alloy
adhesion of plating is improved.
(phosphor bronze, brass, beryllium
・Damage to the material is less than copper etc.), and make the surface
when using sulfuric acid/hydrochloric suitable for plating.
acid.
・Polished to uniform appearance.
・No acid mist is released.
・Stability of polish rate is excellent.
・Stability of the hydrogen peroxide isexcellent.

1.6μm/min.(40℃, Phosphor bronze）*Please feel free to contact our sales for details.
2017.12