DSA 2018 Program
November 11-13, 2018, 2F Pearl Room, Sapporo Park Hotel, Sapporo, Japan

Sunday, November 11, 2018
17:00 – 19:00 Opening Reception

Monday, November 12, 2018
9:20 - 9:30

Opening Remarks
T. Azuma (EIDEC)

Keynote Presentaion

Chair: T. Hayakawa (Tokyo Insitirute of Technology)

Pattern Defect Reduction Efforts for Chemo-Epitaxy DSA Process
9:30 - 10:10(Keynote)

M. Muramatsu, Tokyo Electron Kyushu

Session 1: Materials 1

Chair: T. Hayakawa (Tokyo Insitirute of Technology)

Revolutionary or Evolutionary DSA Chemistry for IC Device
Adoption? Withdrawn
In-Situ Measurement of Self-Assembling Blockcopolymer Thin Film
10:10 – 10:30
with GISAXS
Rapid Self-Assembled High χ Block Copolymer for Large-Scale
10:30 - 10:50
Sub-10 nm Nanopattern by Flash Light
Carbohydrate-Based Block Copolymer Self-Assemblies: Ultra-fast
10:50 – 11:10
Nanorganization of sub_10nm Highly Nanostructured Thin Films

M.A. Hockey, K. Xu. and R. Daugherty, Brewer Sci., USA

9:50 – 10:10

T. Omosu 1, M. Takenaka 1,2, K. Yoshimoto 1,4, T. Azuma 4, K. Kodera 4, 1 Kyoto
Univ., 2 RIKEN 3 C-PIER and 4 EIDEC, Japan
J.H. Kim, H.M. Jin , D.y. Park, K.J. Lee and S.O. Kim, KAIST, Korea
R. Borsali, Univ. Grenoble Alpes, France

11:10 – 11:25

Coffee BreakSession 2: Etch, Simulation and Integration

Chair: K. Yoshimoto (Kyoto Univ.)

Directed Self-Assembly of Block Copolymer for the Fabrication ofNanowire-Based Electromechanical Devices
11:45 – 12:05 Continuum Models for Directed Self-Assembly

C. Pinto-Gómez, R. Mas, F. Pérez-Murano, J. Bausells, M. Fernández-Regúlez, IMBCNM, Spain
M. Müller and J.C.O. Rey, Georg-August Universität Göttingen, Germany

11:25 – 11:45

LunchLunch

12:05 – 13:05

Poster session (13:05 – 14:05)
Poster session

Chair: S. Nagahara (TEL)

Wet Etch Challenges for Wide-Range Directed Self-Assembly
P01

C. Nakayama 1, M. Harumoto 1, Y. Tanaka 1, Y. Arisawa 1, M. Asai 1, K. Yamamoto
2 and K. Morita 2, 1 SCREEN Semiconductor Solutions and 2 Oji Holdings, JapanP02

Oligosaccharide-Based Monodisperse Block Copolymers for Sub-10 T. Isono 1, R. Komaki 1, N. Kawakami 1, H. Mamiya 2, K. Tajima 1, R. Borsali 3 andnm Microphase Separation
T. Satoh 1, 1 Hokkaido Univ., 2 NIMS, Japan and 3 Univ. Grenoble Alps, FranceP04

D. Bae 1,2, H.S. Suh 2 and Y.S. Jung 1, 1 KAIST, Korea and 2 imec, Belgium
Impact of Topography of Chemical Pattern on Directed SelfAssembly Process: Focusing on Defectivity
Resist-Free DSA Chemoepitaxy Approach for Line/Space Patterning T.J. Giammaria 1, A. Gharbi 1, A. Paquet 1,2, C. Navarro 2, C. Nicolet 2, P. Nealey 3and R. Tiron 1, 1 CEA-LETI and 2 Arkema GRL, France and 3 Univ. of Chicago, USA

P05

High-χ Modified Fluorine-Containing Block Copolymer and Thin Film S. Jo, S. Jeon, T. Jun and D.Y. Ryu, Yonsei Univ., Korea

P03

P06
P07
P08
P09

Silicon Containing High-χ Block Copolymers for Directed SelfAssembly (DSA) for Sub-10 nm L/S Patterning.
DSA Technology with Metal Nanocomposites for Advanced
Interconnection
Influence of PS-b-PMMA Block Copolymer Quality on L/S
Perpendicular Orientation

K. Aizu 1, K. Watanabe 1, K. Watabe 1, K. Hirahara 2, A. Takano 3, Y. Matsushita 3,1 Hitachi Chemical, 2 Yamagata Univ. and 3 Nagoya Univ., JapanT. Fukushima, M. Murugesan and M. Koyanagi, Tohoku Univ., Japan

Order to Disorder Transition of Block Copolymer Thin Films onPreferential Wetting Condition

Y. Kim 1, H. Ahn 2, J.U. Kim 3 and D.Y. Ryu 1, 1 Yonsei Univ., 2 POSTECH and 3
Ulsan Natl. Inst. of Sci. and Technol., Korea

Y. Kawaguchi, T Kosaka, R. Matsuki and R. Ogaki, HORIBA STEC, Japan

Invited Paper I

Chair: J. Kline (NIST)

14:05 – 14:35 Integration Challenges for DSA Implementation (Invited)

R. Tiron, CEA-Leti, France

Session 3: Processing 1 Chair:J. Kline (NIST)
14:35 – 14:55

Chair: J. Kline (NIST)

Kinetics of Defect Annihilation in Chemo-Epitaxy DSA

J. Li 1, P.A.R. Delgadillo 2, H.S. Suh 2, G. Mannaert 2, N. Vandenbroeck 2, P.F.
Nealey 1, 1 Univ. of Chicago, USA and 2 IMEC, Belgium
M. Fernández-Regúlez 1,2, E. Solano 3, S. Gottlieb 1, C. Pinto-Gómez 1, L.
Evangelio 1,3, G. Rius 1, J. Fraxedas 3, F. Pérez-Murano 1, H. Amenitsch 5, E. Gutiérrez 6, A. Nogales 6, M.C. García-Gutiérrez 6 and T. Ezquerra 6, 1 IMB-CNM, 2Univ. Autonoma de Barcelona, 3 NCD-SWEET beamline, 4 ICN2, Spain, 5 Graz
Univ. of Technol., Austria and 6 IEM-CSIC, Spain

Extracting Block Copolymer Dynamics from GISAXS
14:55 – 15:15

Defect Mitigation in sub-20 nm Patterning with High-Chi, Silicon
15:15 – 15:35 Containing Block Copolymers

15:55 – 16:10

J. Doise 1, G. Mannaert 1, H.S. Suh 1, P. Rincon 1, G. Vandenberghe 1, C.G.
Willson 2 and C.J. Ellison 3, 1 imec, Belgium, 2 Univ. of Texas and 3 Univ. ofMinnesota, USA
A. Paquet 1,2 , A. Gharbi 1, P. Pimenta-Barros 1, G. Chamiot-Maitral 1, X. Chevalier2, C. Navarro 2, C. Nicolet 2, K. Sakavuyi 3, K. Xu 3, L. Pain 1, I. Cayrefourcq 2, P.
Nealey 4, R. Tiron 1, 1 CEA-LETI, 2 Arkema, France, 3 Brewer Science and 4 Univ.
of Chicago USA
Coffee BreakSession 4: Materials 2Chair: H. S. Suh (imec)

Chemical Patterns Obtained with Spacer Patterning Lithography for15:35 – 15:55 Directed Self-Assembly of Block Copolymer: Process ACE

Evolution of Perpendicular Lamellae in High-χ Block Copolymers via A. Chandra 1, R. Nakatani 1, Y. Nabae 1, Y. Seino 2, H. Sato 2, Y. Kasahara 2, T.
16:10 – 16:30
In-Situ Atomic Force Microscopy
Azuma 2 and T. Hayakawa 1, 1 Tokyo Inst. of Technol. and 2 EIDEC, Japan
Fabrication of Refractive Index Tunable Visible-Light Metasurface by K.H. Han, J.Y. Kim, J. Shin, and S.O. Kim, KAIST, Korea
16:30 – 16:50 Block Copolymer Self-Assembly
Hemicellulose Block Copolymer Enabling Wider Range DSA and16:50 – 17:10 High Fabrication Property for Feasible DSA Application
Sub-10 nm Self-Assembly in a High-Chi Block Copolymer with
17:10 – 17:30 Versatile Etch Selectivity

K. Morita 1, K. Yamamoto 1, M. Harumoto 2, Y. Tanaka 2, C. Nakayama 2, Y.
Arisawa 2 and M. Asai 2, 1 Oji Holdings and 2 SCREEN Semiconductor Solutions,Japan
K. Azuma 1,2, J. Sun 2, Y. Choo 3, Y. Rokhelenko 3, B. Schweitzer 4, T. Hayakawa
1, C.O. Osuji 3 and P. Gopalan 2, 1 Tokyo Inst. of Technol., Japan, 2 Univ. of
Wisconsin-Madison, 3 Yale Univ. and 4 Berea College, USA

Ordering Kinetic in Two-Dimensional Hexagonal Pattern of Cylinder- M. Perego 1, G. Seguini 1, F. Zanenga 1,2 and M. Laus 2, 1 IMM-CNR and 2 Univ.
17:30 – 17:50 Forming PS-b-PMMA Block Copolymer Thin Filmsdel Piemonte Orientale, Itary

Conference Dinner
18:25 - 18:40 Bus Transportation (18:10 at the 1F lobby)

㻝䚷㻛㻌㻞DSA 2018 Program
November 11-13, 2018, 2F Pearl Room, Sapporo Park Hotel, Sapporo, Japan
19:00 – 21:00 Conference Dinner (Sapporo Beer Museum)Tuesday, November 13, 2018
Invited paper IIChiar: M. Takenaka (Kyoko Univ.)

Strategies for Small to Large Scale Block Copolymer Self-Assembly D.Y. Ryu, Yonsei Univ., Korea
9:20 – 9:50
(Invited)

Session 5: Proceessing 2

Chiar: M. Takenaka (Kyoko Univ.)

Defect Reduction Strategy for LiNe Flow: Back to Basics

H.S. Suh, P.R. Delgadillo, D. Bae, J. Li, J. Doise, N. Vandenbroeck, G. Mannaert, G.
Vandenberghe, imec, Belgium

9:50 – 10:10

D. Bae 1,2, H.S. Suh 2 and Y.S. Jung 1, 1 KAIST, Korea and 2 imec, Belgium
Impact of Topography of Chemical Pattern on Directed SelfAssembly Process: Focusing on Defectivity
Silicon Nanowires Patterning and Integration Using DSA Lithography M. Argoud 1, P.P. Barros 1, Z. Chalupa 1, G. Claveau 1, G. Chamiot-Maitral 1, A.
Bernadac 1, C. Navarro 2, C. Nicolet 2, I. Cayrefourcq 2, R. Tiron 1, 1 CEA-LETI and
10:10 – 10:30
2 ARKEMA FRANCE, France
9:50 – 10:10

Coffee Break
Time-Resolved Investigation of TMA Diffusion Process in PS, PMMA E. Cianci 1, D. Nazzari 1,2, G. Seguini 1 and M. Perego 1, 1 IMM-CNR and Univ.
10:45 – 11:05 and PS-r-PMMA Thin Films during SIS by In-Situ Spectroscopic
Statale di Milano, Itary
Ellipsometry
DSA
Materials
Filtration
T.
Umeda and S. Tsuzuki, Nihon Pall, Japan
11:05 – 11:25
10:30 – 10:45

Block Copolymer Nanopatterning of Dielectric Mask for Selective
11:25 – 11:45 Area InAs Vertical Nanowire Growth

A. Löfstrand, M. Graczyk, D. Suyatin, A. Kvennefors, I. Maximov, J. Svensson andL.-E. Wernersson, Lund Univ., Sweden

Session 6: 2D and 3D Metrology

Chair: D. Sunday (NIST)DSA Process Roughness Characterization Through Power Spectral R.L. Tiec 1, S. Levi 1, P. Pimenta-Barros 2, M. Argoud 2, Z. Chalupa 2, A. Bernadac
11:45 – 12:05 Density (PSD)
2, C. Vannuffel 2, S. Rey 2, G.C. Maitral 2, R. Tiron 2, 1Applied Materials and 2 Univ.
Grenoble, France
Accelerate the Analysis and Optimization of Lamellar BCP Process A. Derville, G. Gey, J. Baderot, X. Chevalier, G. Bernard, J. Foucher and I.
12:05 – 12:25 Using Machine Learning
Cayrefourcq, POLLEN Metrology, FranceLunchLunch

12:25 – 13:25

Session 7: Materials 3

Chair: T. Nagai (JSR)

Microdomain Orientation of Self-Assembled Block Copolymer
13:25 – 13:45 Vertically to the Substrate by Polymer Brush Grafting

W. Lee 1, S. Park 1 and V. Sethuraman 2, N. Rebello 2, V. Ganesan 2 and D.Y. Ryu
1, 1 Yonsei Univ. and 2 Univ. of Texas Austin, USA

Post-Polymerization Modification of Polystyrene-block-Poly(Methyl
13:45 – 14:05 Methacrylate) for Fabricating Sub-10 nm Feature Size

K. Yoshida 1, S. Tanaka 1, K. Miyagi 2, A. Yamazaki 2, T. Isono 1, T. Yamamoto 1,K. Tajima 1, R. Borsali 3 and T. Satoh 1, 1 Hokkaido Univ., 2 Tokyo Ohka Kogyo,
Japan and 3 Cermav, FranceG.G. Yang, H.M. Jin and S.O. Kim, KAIST, Korea

Block Copolymer Self-Assembly on the Light-absorbing Graphene
14:05 – 14:25 Layer by Using Laser Writing
Evaluation of high-χ silicon-containing BCPs performances for DSA

X. Chevalier 1, M. Zelsmann 2, P. Bezard 2, G. Fleury 3, C. Nicolet 1, K. Sakavuyi 4,L. Pain 5, C. Navarro 1, D. Jurajda 3, I. Cayrefourcq 1, 1 ARKEMA FRANCE, 2 Univ.
Grenoble Alpes, 3 Univ. Bordeaux, France, 4 Brewer Sci., USA and 5 CEA-LETI,France
Sub-5 nm Patterning by Self-Assembly of Hydroxyl-Containing Block C. Wang, X. Li and H. Deng, Fudan Univ., China
14:25 - 14:45
Copolymers
Coffee Break
14:45 - 15:05

14:25 – 14:45 applications Withdrawn

Chair: T. Nagai (JSR)
T. Jun, Y. Lee, S. Jo, and D.Y. Ryu, Yonsei Univ., Korea
15:00 - 15:20 χN effect on Composition Fluctuation of Block Copolymer SelfUltra-Fast Directed Self-Assembly Materials for Sub-5 nm Patterning X. Li, J. Zhou, Y. Peng, H. Deng, Fudan Univ., China
15:20 - 15:40
Application
K. Asakawa, N. Sasao, T. Sawabe and S. Sugimura, Toshiba Memory, Japan
15:40 - 16:00 Visualization of NL Polymer Distribution in NIL Guides for DSA
16:00 - 16:20

High-Chi Silicon Containing Block Copolymers: Materials andProcesses for Orientation Control and Directed Self-Assembly

C.J. Ellison 1 and C.G. Willson 2, 1 Univ. of Minnesota and 2 Univ. of Texas, USA

Discussion, Voting and adjourn
Debate and Voting
T. Azuma (EIDEC)
Closing Remarks
16:40 - 16:50
S. Nagahara (TEL)
16:20 - 16:40

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