BC337/338

BC337/338
Switching and Amplifier Applications• Suitable for AF-Driver stages and low power output stages• Complement to BC327/BC328
TO-92

11. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
SymbolVCES

Parameter
Collector-Emitter Voltage: BC337: BC338

ValueUnits

5030VV

4525V
V

Collector-Emitter Voltage: BC337: BC338

VCEO

VEBO

Emitter-Base Voltage

5VIC

Collector Current (DC)

800mAPC

Collector Power Dissipation

625mWTJ

Junction Temperature

150°C

TSTG

Storage Temperature-55 ~ 150°C

Electrical Characteristics Ta=25°C unless otherwise notedSymbol
BVCEO

Parameter
Collector-Emitter Breakdown Voltage: BC337: BC338

Test Condition
IC=10mA, IB=0Collector-Emitter Breakdown Voltage: BC337: BC338

IC=0.1mA, VBE=0

BVEBO

Emitter-Base Breakdown Voltage

IE=0.1mA, IC=0ICES

Collector Cut-off Current: BC337: BC338

VCE=45V, IB=0
VCE=25V, IB=0

BVCES

Min.

Typ.

Max.

Units

4525V
V

5030VV

5V2210060

100100nAnA630hFE1hFE2DC Current Gain

VCE=1V, IC=100mA
VCE=1V, IC=300mA

VCE (sat)

Collector-Emitter Saturation Voltage

IC=500mA, IB=50mA

0.7

VBE (on)Base Emitter On Voltage

VCE=1V, IC=300mA

1.2fTCurrent Gain Bandwidth Product

VCE=5V, IC=10mA, f=50MHz

100

MHz

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

12pF

VV

hFE Classification
Classification

162540hFE1100 ~ 250

160 ~ 400

250 ~ 630

hFE260-100-170-©2002 Fairchild Semiconductor CorporationRev. A2, August 2002

BC337/338

Package Dimensions

TO-92+0.25

4.58 ±0.20

4.58 –0.15

14.47 ±0.40

0.46 ±0.10

1.27TYP[1.27 ±0.20]

1.27TYP[1.27 ±0.20]+0.10

0.38 –0.05(0.25)+0.10

0.38 –0.05

1.02 ±0.10

3.86MAX

3.60 ±0.20(R2.29)Dimensions in Millimeters©2002 Fairchild Semiconductor CorporationRev. A2, August 2002

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