Tuesday, October 30
Room C (Zuiten Higashi 4F)
13:10-17:35 MNC 2012 Technical Seminar ''DSA''
Room D (Tenku 5F)
17:40-19:40 Get Together Party

Wednesday, October 31
Room A (Zuiten Nishi 4F)
31A-1: Plenary Session
Chairpersons: Y. Ono (Univ. of Toyama) and T. Kozawa (Osaka Univ.)
9:30-9:50
Opening Remark: T. Itani (EIDEC)Award Presentation: Y. Ono (Univ. of Toyama) and T. Itani (EIDEC)MNC 2011 Outstanding Paper, Most Impressive Presentation, Most Impressive Poster and Young Author’s Award
Announcement from Committee: J. Fujita (Univ. of Tsukuba)

31A-1-1 9:50
Big Data Transforms Our Society (Plenary)
M. Kitsuregawa, Univ. of Tokyo, Japan

Robby (4F in front of Zuiten)
Coffee BreakRoom A (Zuiten Nishi 4F)
31A-1-2 10:50
EUV Lithography : Getting Ready for Insertion ? (Plenary)
K. Ronse, IMEC, Belgium

31A-1-3 11:30
Directed assembly of block copolymers for applications in lithography and manufacturing (Plenary)
P. Rincon 1,2, H. Suh 1, J.I. Lee 3, M. Bedolla 3, G. Liu 3, C.C. Liu 3, L. Wan 4, R. Ruiz 4, R. Gronheid 2, H.Yoshida 5, P. Nealey 1, 1 Univ. of Chicago, 2 IMEC, 3
Univ. of Wisconsin, 4 HGST, USA and 5 Hitachi, Japan
LUNCH

Room A (Zuiten Nishi 4F)
31A-2:Symp. B: Nanoimprint I
Chairpersons:
A. Yokoo (NTT)
H.Y. Low (Inst. of Materials
Res. and Eng.)

Room B (Zuiten Naka 4F)
31B-2:
Nanostructure
Engineered Devices
Chairpersons:S. Kasai (Hokkaido Univ.)
T. Maemoto (Osaka Inst. ofTechnol.)

Room C (Zuiten Higashi 4F)
31C-2:Nanomaterials I
Chairpersons:T. Chikyo (NIMS)
Y. Matsumoto (Tokyo Inst. ofTechnol.)

Room D (Tenku 5F)
31D-2:Graphene I
Chairpersons:K. Maehashi (Osaka Univ.)
S. Okada (Univ. of Tsukuba)

31A-2-1
13:30
Progress in NaPANIL Project(Invited)

31B-2-1
13:30
1.3-μm Quantum Dot DFB Laserwith Half-etching Mesa Structure

31C-2-1
13:30
2D Oxide Nanosheets: FutureHigh-k Dielectrics from Nano
Building Blocks (Invited)

31D-2-1
13:30
Graphene for Future Electronics(Invited)

J. Ahopelto, VTT Technical Res.
Centre, Finland

31A-2-2
14:00
Nano-imprint based patterning
process for high brightness
LEDs (Invited)
J. Cho, K. Byeon and H. Lee, Korea
Univ., Korea

31A-2-3
14:30
Development of Micro/Nano
Imprint with Bulk Metallic
Glasses (Invited)
F.-Y. Chang and J. P. Chu, Natl.
Taiwan Univ. of Sci. and Technol.,TaiwanJ.-H. Ahn, Sungkyunkwan
Korea

Univ.,

K. Goshima 1, N. Tsuda 1, J. Yamada
1, T. Sugaya 2, K. Komori 2 and T.
Amano 2, 1 Aichi Inst. of Technol. and2 AIST, Japan

M. Osada 1,2 and T. Sasaki 1,2
1 NIMS and 2 JST-CREST, Japan

31B-2-2
13:50
Characteristics of Light Emitting
Diodes with a Nanomesh Metal
Electrode31C-2-2
14:00
Magnetoresistance Effects in
Current-Perpendicular-to-Plane
Structures based on Fe3Si/FeSi2
Artificial Lattices

31D-2-2
14:00
Optimization of Gate Insulating
Materials on Graphene for Future
CMOS Channels by Raman andPhotoelectron Spectroscopy

31C-2-3
14:20
Growth of Atomically Thin
Hexagonal Boron Nitride Films
from Solid Sources

31D-2-3
14:20
Edge-orientation of Graphene
Corner:First-principles
Calculations

R. Kitagawa, K. Nakamura, K.
Masunaga, E. Tsutsumi, T. Nakanishi,
A. Fujimoto and K. Asakawa,Toshiba, Japan

31B-2-3
14:10
Novel Delivery Process of High
Dense Gold Nanoparticles on Si
Substrate to Introduce Plasmon
AbsorbanceS. Saijo 1,2, B. Zheng 1,2, I.
Yamashita 1,2 ,Y. Uraoka 1,2 and Y.
Ishikawa 1,2, 1 Nara Inst. of Sci. andTechnol. and 2 JST-CREST, Japan

K. Sakai 1, Y. Noda 2, D. Tsumagari
2, T. Sonoda 2, S. Hirakawa 2, K.
Takeda 3 and T. Yoshitake 2, 1
Kurume Natl. Coll. of Technol., 2
Kyushu Univ. and 3 Fukuoka Inst. ofTechnol., Japan

S. Suzuki, R.M. Pallares and H.
Hibino, NTT, Japan-1-

D. Kondo 1,2, K. Hayashi 1,2, J.
Yamaguchi 1,2, I. Soga 2, S. Sato 1,2
and N. Yokoyama 1,2, 1 AIST and 2
Fujitsu Labs., Japan

N.T. Cuong 1,3, M. Otani 1,3, and S.
Okada 2,3, 1 AIST, 2 Univ. of Tsukuba
and 3 JST-CREST, Japan31A-2 Author's Interview:
16:45-16:55

31B-2-4
14:30
Crucial Role of Ambient Pressureon Thermal Shrinking of Au
Nanodot Array
G. Meng 1, T. Yanagida 1, K.
Nagashima 1, M. Kanai 1, M. Suzuki
2, A. Klamchuen 1, B. Xu 1, F.W.
Zhuge 1, S. Rahong 1, Y. He 1 and T.
Kawai 1, 1 Osaka Univ. and 2 Kyushu
Univ., Japan

31C-2-4
14:40
Production of Graphene Films by
SimpleElectrochemical
Exfoliation using NaCl Solution

E. Kano 1, R. Ueki 1, T. Takahashi 1,
S. Akiyama 1, J. Tang 1,2, K.
Murakami 1 and J. Fujita 1, 1 Univ. of
Tsukuba and 2 NIMS, Japan

31D-2-4
14:40
SynthesisofGraphene
Nanoribbons
fromAmyloid
Template on Sapphire Substrateby Liquid Gallium Graphitization
R. Ueki 1,2, T. Dong 1,2, Y. Kajiwara
1,2, E. Takai 2, Y. Shikiya 2, K. Shiraki
2, Y. Yamada 2, K. Murakami 1,2 andJ. Fujita 1,2, 1 TIMS and 2 Univ. of
Tsukuba, Japan

31B-2-5L
14:50
Direct Fabrication of WxCy
SNS Josephson Junction by
Using
Focused-ion-beam
Chemical Vapor Deposition

31C-2-5
15:00
Selective-area
Metal-organic
Vapor Phase Epitaxy of AlGaAs
Nanostructures on Crystallized
Insulating Al2O3 Layers

31D-2-5
15:00
Direct Graphene Growth with
Multi Metal Layers without using
Chemical Vapor Deposition

J. Dai 1,2, K. Onomitsu 2, R.
Kometani 1, Y. Krockenberger 2, H.
Yamaguchi 2, S. Ishihara 1 and S.
Warisawa 1, 1 Univ. of Tokyo and 2
NTT, Japan

S. Sakita, M. Yatago and S. Hara,
Hokkaido Univ., Japan

K. Gumi, Y. Ohno, K. Maehashi, K.
Inoue and K. Matsumoto, Osaka
Univ., Japan

31B-2 Author's Interview:
16:55-17:05

31C-2 Author's Interview:
16:55-17:05

31D-2 Author's Interview:
16:55-17:05

Robby (4F in front of Zuiten)
Coffee BreakRoom A (Zuiten Nishi 4F)
31A-3: Symp. B: Nanoimprint II
Chairpersons:S. Matsui (Univ. of Hyogo)
J. Ahopelto (VTT TechnicalRes. Centre)
31A-3-1
15:15
Progress of Jet and Flash
Imprint Lithography for Volume
Manufacturing (Invited)
H. Wada, Molecular Imprints, Japan

31A-3-2
15:45
Repairable
Nanoimprinted
Structures (Invited)
H.Y. Low, Inst. of Materials Res. andEng., Singapore

31A-3-3
16:15
Applying
Directed
Self-assembling and Nanoimprint
lithography for Fabrication of Bit
Patterned Media (Invited)
N. Kihara, Y. Ootera, R. Yamamoto,N. Sasao, T. Shimada, H. Hieda, T.
Okino, Y. Kamata, and A. Kikitsu,
Toshiba, Japan

31A-3 Author's Interview:
16:45-16:55

Room B (Zuiten Naka 4F)
31B-3:Nanoscale Memory
Chairpersons:T. Yanagida (Osaka Univ.)
Y. Ishikawa (Nara Inst. of Sci.
and Technol.)
31B-3-1
15:35
Gate Structure Dependence of
Variability in Poly-Si FinFET
Flash Memories

Y.X. Liu 1, T. Kamei 2, T. Matsukawa
1, K. Endo 1, S. O'uchi 1, J. Tsukada
1, H. Yamauchi 1, Y. Ishikawa 1, T.
Hayashida 2, K. Sakamoto 1, A.
Ogura 2 and M. Masahara 1, 1 AIST
and 2 Meiji Univ., Japan

31B-3-2
15:55
Structural Analysis of TiO2/Ti Film
Resistive Switched by AFM
ProbesH. Nakano 1, M. Takahashi 1, M.
Sato 1, M. Kotsugi 2, T. Ohkochi 2, T.
Muro 2, M. Nihei 1 and N. Yokoyama
1, 1 AIST and 2 JASRI, Japan

Room C (Zuiten Higashi 4F)
31C-3:Nanomaterials II
Chairpersons:
K. Terabe (NIMS)
T. Chikyo (NIMS)
31C-3-1
15:35
Surrounding
Effectson
Nanoscale Memristive Switching
Behaviors
K. Nagashima 1, T. Yanagida 1, M.
Kanai 1, K. Oka 1, B.H. Park 2, T.
Kawai 1,2, 1 Osaka Univ., Japan and2 Konkuk Univ., Korea

31C-3-2
15:55
Observation of Light induced
Pyroelectric Transient in Single
Sb2Se3 Nanowires

T.Y. Ko and K.W. Sun, Natl. Chiao
Tung Univ., Taiwan

Room D (Tenku 5F)
31D-3: Carbons Nanotube II
Chairpersons:S. Chiashi (Univ. of Tokyo)
M. Tanemura (Nagoya Inst. ofTechnol.)
31D-3-1
15:35
GrowthMechanismofHorizontally
AlignedSingle-walled Carbon Nanotubes
on
R-cut
CrystalQuartzSubstrates

S. Chiashi, T. Inoue, D. Hasegawa, S.
Badar and S. Maruyama, Univ. ofTokyo, Japan

31D-3-2
15:55
Polarization Dependence of G
Band of Single-walled Carbon
Nanotubes oriented on Quartz
Single Crystal Surfaces

I. Shimoyama 1,2, X. Li 2 and T.
Shimada 2,3, 1 JAEA, Japan, 2
Stanford Univ., USA and 3 Nagoya
Univ., Japan

31B-3-3
16:15
Confined Resistive Switching ofTiO2
Dielectrics
Resistive
Random Access Memory with a
Nanopore in the TiO2 Filmcreated by Focus Ion Beam

31C-3-3
16:15
Preparation and Characteristic ofRelative Humidity Sensors basedon
Laterally
Grown
ZnO
Nanowires using Hydrothermal
Method31D-3-3
16:15
Multiple Investigation of Charge
Transfer between Single-walled
Carbon Nanotubes and N-type
Dopants

F.-S. Tsai, S.-J. Wang, Y.-C. Tu, T.-H.
Lin and J.-C. Lin, Natl. Cheng Kung
Univ., Taiwan

R. Shimizu 1, S. Matsuzaki 1, K.
Yanagi 2 and T. Takenobu 1, 1
Waseda Univ. and 2 Tokyo
Metropolitan Univ., Japan

31B-3-4
16:35
Magnetite Bio-nanoparticle for
Nano Resistive Memory

31C-3-4
16:35
First-principles Simulation on
Polymorph
DependenceofPiezoresistivity in Silicon Carbide
Nanowires

31D-3-4
16:35
Wave
PacketDynamics
Simulations
on
Electronic
Transportin
Nano-carbon
Materials

31C-3 Author's Interview:
16:55-17:05

31D-3 Author's Interview:
16:55-17:05

C.-H. Wu 1, C.-J. Hsieh 2 and S.-J.
Wang 2, 1 Chung Hua Univ. and 2
Natl. Cheng Kung Univ., Taiwan

K. Kado 1,2, T. Ban 1,2, M. Uenuma
1,2, Y. Kakihara 1,2, B. Zheng 1,2, M.
Horita 1,2, Y. Ishikawa 1,2, I.
Yamashita 1,2 and Y. Uraoka 1,2, 1
Nara Inst. of Sci. and Technol. and 2
JST-CREST, JapanK. Nakamura 1,2, 1 Kyoto Univ.,
Japan and 2 Egypt-Japan Univ. ofSci. and Technol., Egypt

31B-3 Author's Interview:
16:55-17:05

Robby (4F in front of Zuiten)
17:10-18:40 Happy Hour

-2-

Y. Takada, K. Takashima and T.
Yamamoto, Tokyo Univ. of Sci., JapanThursday, November 1
Room A (Zuiten Nishi 4F)
1A-4:Symp.
A:
ExtremeUltraviolet Lithography and
Lithography Extensions I
Chairpersons:T. Sato (Toshiba)
J. Miyazaki (ASML)

Room B (Zuiten Naka 4F)
1B-4:BioMEMS, Lab on a ChipI
Chairpersons:
K. Furukawa (NTT)K. Tawa (AIST)

Room C (Zuiten Higashi 4F)
1C-4:Nanoimprint, Nanoprint
and Rising Lithography I
Chairpersons:
H. Hiroshima (AIST)
F.-Y. Chang (National Taiwan
Univ.)

Room D (Tenku 5F)
1D-4: Graphene II
Chairpersons:
D. Kondo (Fujitsu Labs.)
M.
Nagase(Univ.
Tokushima)

1A-4-1
9:00
Recent Activities on EUVL in
NewSUBARU (Invited)

1B-4-1
9:00
Evaluation of Electrophoretic
Mobility of Individual Exosomesby Microcapillary Electrophoresis
with Laser Dark-field Microscopy

1C-4-1
9:00
Continuous and High-throughput
Patterning Techniques and Their
Applications in Photonics andTransparent Conductors (Invited)

1D-4-1
9:00
Electrical
Resistivity
Measurements of Layer Number
Determined
Multi-layer
Graphene for Future LSIInterconnects

H. Kinoshita 1,2 T. Watanabe 1,2
and T. Harada 1,2, 1 Univ. of Hyogo
and 2 JST-CREST, Japan

1A-4-2
9:30
Current Progress of Advanced
EUVL Development in EIDEC(Invited)

S. Inoue, H. Watanabe, T. Itani, and I.
Mori, EIDEC, JapanK. Kato 1, M. Kobayashi 1, T. Akagi 1,
N. Kosaka 2, T. Ochiya 2 and T. Ichiki1, 1 Univ. of Tokyo and 2 Natl. Cancer
Center Research Inst., Japan

S. Sivakumar, Intel, USA

1A-4 Author's Interview:
12:15-12:25

K. Ito 1, M. Katagiri 2, T. Sakai 2 andY. Awano 1, 1 Keio Univ. and 2 LEAP,Japan

1B-4-2
9:20
Tempospatial External Field
Potential
Fluctuation
Measurement in Constructive
Cardiomyocyte Network for invitro Predictive Cardiotoxicity

1C-4-2
9:30
Novel
Organic
Radiation
Detector with Nanoimprinted
Structure

1D-4-2
9:20
Multiple Exciton Generation inGraphene Nanoribbon

1B-4-3
9:40
Visualizing a Transient Molecular
Encounter leading to Single DNA
Digestion in Fluid

1C-4-3
9:50
Enhanced
Light
Extraction
Efficiency of W-OLED using
UV-nanoimprinted AR Structure
Glass

1D-4-3
9:40
Effects of Internal Strain induced
by Low-energy Electron Beam
Irradiation on Graphene

1B-4-4
10:00
Fabrication of Fine mRNA
Patterns using Microintaglio
Printing Method

1C-4-4
10:10
Study of the Resistance ofAntisticking Layer on Repeated
UV Nanoimprint

1D-4-410:00
In situ Observation of Grapheneduring Gate Oxide Formation
using Raman Spectroscopy

1B-4-5
10:20
Oxide Nanowires DNA Chip forLong
DNA
Molecules
Manipulation

1C-4-5
10:30
Study of Organic Thin Film
Transistorson
UV-curable
Dielectrics with Periodic Patterns
fabricated by Nano Imprint
Technology

1D-4 Author's Interview:
11:55-12:05

T. Hamada, F. Nomura, T. Kaneko, K.
Yasuda, Tokyo Medical and Dental
Univ., Japan

1A-4-3
10:00
Next Generation Lithography:
Challenges for High Volume
Manufacturing (Invited)

L.J. Guo, S.H. Ahn, J.G. Ok and M.K.
Kwak, Univ. of Micigan, USA, Univ. of
Micigan, USA

ofD. Onoshima 1, N. Kaji 1, M. Tokeshi
1,2 and Y. Baba 1,3, 1 Nagoya Univ.,
2 Hokkaido Univ. and 3 AIST, Japan

R. Kobayashi 1, Y. Tanaka 1, S. Ueno
1,2, M. Biyani 1,2 and T. Ichiki 1,2, 1
Univ. of Tokyo and 2 JST-CREST,Japan

S. Rahong 1, T. Yanagida 1,2, M.
Kanai 1, A. Klamchuen 1, M. Gang 1,
K. Nagashima 1, T. Yasui 3, N. Kaji 3,
Y. Baba 3,4 and T. Kawai 1, 1 Osaka
Univ., 2 JST-PRESTO, 3 Nagoya
Univ. and 4 AIST, Japan

K. Tada 1, E. Takada 1, K. Tomohiro
2, K. Fujii 1, Y. Masuyama 1 and Y.
Hirai 2, 1 Toyama Natl. Coll. ofTechnol. and 2 Osaka Pref. Univ.,
Japan

K.-Y. Cheng 1, C.-K. Huang 2, M.-Y.
Chang 2, H.-Y. Lin 1 and T.-H. Chou
1, 1 ITRI and 2 Natl. Sun Yat-Sen
Univ., Taiwan

S. Iyoshi 1,5, M. Okada 1,5,6, K.
Kobayashi 3,5, S. Kaneko 3,5, T.
Katase 2, K. Tone 2, Y. Haruyama
1,5, M. Nakagawa 3,5, H. Hiroshima
4,5 and S. Matsui 1,5, 1 Univ. of
Hyogo, 2 Meisyo Kiko, 3 Tohoku
Univ., 4 AIST, 5 JST-CREST and 6
JSPS, Japan

S. Konabe and S. Okada, Univ. of
Tsukuba, Japan

T. Kadowaki 1,2, K. Murakami 1,2
and J. Fujita 1,2, 1 TIMS and 2 Univ.
of Tsukuba, Japan

R. Sato, H. Fukidome and M.
Suemitsu, Tohoku Univ., Japan

H.J.H. Chen 1, J.-Y. Chen 1, S.-Z.
Chen 2 and J.-C. Huang 2, 1 Natl. Chi
Nan Univ. and 2 Natl. Tsing Hua
Univ., Taiwan

1B-4 Author's Interview:
10:40-10:50

1C-4 Author's Interview:
12:25-12:35

Robby (4F in front of Zuiten)
Coffee BreakRoom A (Zuiten Nishi 4F)
1A-5:Symp.
A:
ExtremeUltraviolet Lithography and
Lithography Extensions II
Chairpersons:S. Nagahara (Tokyo Electron)
K. Ogino (Fujitsu Semiconductor)

Room B (Zuiten Naka 4F)
1B-5: 11:05-12:35 Material &Process for MEMS I
Chairpersons:H. Takao (Kagawa Univ.)
T. Ando (Ritsumeikan Univ.)

Room C (Zuiten Higashi 4F)
1C-5: Nanoimprint, Nanoprint
and Rising Lithography II
Chairpersons:J. Taniguchi (Tokyo Univ. ofSci.)
A. Yokoo (NTT)-3-

Room D (Tenku 5F)
1D-5:
10:35-11:55
CarbonNanotuber II
Chairpersons:S. Akita (Osaka Pref. Univ.)
S. Chiashi (Univ. of Tokyo)

1A-5-1
10:45
High CE Technology
Source for HVM (Invited)
H. Mizoguchi and
Gigaphoton, JapanT.

EUV
Saitou,1B-5-1
11:05
Experimental Nano Mechanics
for
Silicon&CarbonNanomaterials Using MEMS
Technology (Invited)

1C-5-1
11:05
Solvent Assisted Nanoimprint
Lithographyas
Block
Copolymers
Directed
Selfassembly Tool

1D-5-1
10:35
Carbon Nanotube Solar Cellutilizing Semiconducting Carbon
Nanotube as Exciton Generators

1C-5-2
11:25
Combination of Circular PDMS
Mold and Gasbag Roller toReplicate Continuous Anodic
Aluminum
Oxide
Nano
Structures by UV Resin on PC
Film

1D-5-2
10:55
Degradation of Carbon Nanotube
Emitters in High Electric Field

1C-5-3
11:45
Uniform Residual Layer Creation
in UV Nanoimprint using Spin
Coat Films for Sub-100nm
Patterns with Various Pattern
Densities

1D-5-3
11:15
CarbonNanotube-based
Memorywith
Atomic-Layer-DepositedDielectrics

1B-5-4
12:15
Evaluation of a Capacitive
Sensor with a Gold Proof Mass
toward Integrated CMOS-MEMS
Accelerometers

1C-5-4
12:05
Fabrication of Nano and Micron
Size Mixture Patterns by Edge
Lithography

1D-5-4
11:35
InkjetPrintingof
AlignedCarbon-nanotube Thin Films

1B-5 Author's Interview:
15:10-15:20
Room B (Zuiten Naka 4F)
1B-6: Material &Process for
MEMS II
Chairpersons:N. Miki (Keio Univ.)
M. Sohgawa (Osaka Univ.)
1B-6-1
13:40
Micromachining Techniques for
Wider Variety of 3D Devices(Invited)

1C-5 Author's Interview:
12:25-12:35
Room C (Zuiten Higashi 4F)
1C-6:Functional Nanodevices
Chairpersons:
N. Banno (Leap)
Y. Ono (Univ. of Toyama)

1D-5 Author's Interview:
11:55-12:05
Room D (Tenku 5F)
1D-6: Nano-Tool
Chairpersons:S. Akita (Osaka Pref. Univ.)
T. Ono (Tohoku Univ.)

1C-6-1
13:50
Quantum Computing in Siliconwith Donor Electron Spins(Invited)

1D-6-1
13:20
High-speed
Robotic
Tools
integrated with Microfluidic Chipfor
Biomedical
Innovation(Invited)

Y. Isono, Kobe Univ., Japan

1A-5-2
11:15
Resist materials forlithography (Invited)

EUV

S. Tarutani, Fujifilm, Japan

1B-5-2
11:35
P-type Sb2Te3 and n-type Bi2Te3
Films for Thermoelectric Modules
deposited by Thermally-assisted
Sputtering Method

M. Mizoshiri, M. Mikami and K. Ozaki,
AIST, Japan

C. Simao 1, N. Kehagias 1, D. Borah
2,3, B. Kosmala 2,3, M. Salaun 4, M.
Zelsmann 4, M.A. Morris 2,3 andC.M. Sotomayor Torres 1,5, 1 UAB,
Spain, 2 Tyndall Natl. Inst. UCC and 3
Trinity Coll. Dublin, Ireland, 4 CNRS,France and 5 ICREA, Spain

E.-S. Kim and W.-J. Kim, Gachon
Univ., Korea

T. Emi, K. Kuroda, K. Hirahara and Y.
Nakayama, Osaka Univ., Japan

Y.-H. Lee, R.-H. Hong, K.-H. Lu andS.-Y. Yang, Natl. Taiwan Univ., Taiwan

1A-5-3
11:45
Challenges of EB Writer for EUV
Mask (Invited)

S. Yoshitake, S. Wake, Y. Sengoku,
S. Hayashi, T. Iijima, M. Ogasawara
and K. Hattori, NuFlare Technol.,
Japan

1A-5
Author's
12:15-12:25

Interview:

1B-5-3
11:55
MicrofabricationofAbsorbent
Polymer
Nanoimprinting
andSwelling Process

Super
by
Post

T. Inaba, T. Kano and N. Miki, Keio
Univ., JapanD. Yamane 1, T. Matsushima 2, T.
Konishi 2, G. Motohashi 1, H. Ito 1, N.
Ishihara 1, H. Toshiyoshi 3, K.
Machida 1,2 and K. Masu 1, 1 Tokyo
Inst. of Technol., 2 NTT-AT and 3
Univ. of Tokyo, Japan

Room A (Zuiten Nishi 4F)
1A-6:
Lithogphay
andMetrology
Chairpersons:H. Kawai (Nikon)
H. Yamashita (HOYA)
1A-6-1
13:40
Plasmon-enhanced
Photochemical Reactions on
Nano-engineered
Gold
Particles (Invited)
K. Ueno, Hokkaido
JST-PRESTO, Japan

Univ.

and

1A-6-2
14:10
EUV Interference Lithography at
Swiss Light Source

L. Wang, M. Hojeij, M. Vockenhuber,
B. Terhalle, E. Kirk, J. Gobrecht andY. Ekinci, Paul Scherrer Inst.,
Switzerland

1A-6-3
14:30
An
EUV
Mask-imaging
MicroscopeforLithography
Generations with sub-16 nm Half
Pitch
M. Toyoda, K. Yamasoe, K. Uchida
and M. Yanagihara, Tohoku Univ.,
Japan

M. Sasaki and S. Kumagai, Toyota
Technological Inst., Japan

K. Suzuki 1,2,3, S.-W. Youn 2,3, Q.
Wang 2,3, H. Hiroshima 2,3 and Y.
Nishioka 1, 1 Nihon Univ., 2 AIST and
3 JST-CREST, Japan

H. Noma 1,2, J. Sakamoto 1, H.
Kawata 1,2, M. Yasuda 1,2 and Y.
Hirai 1,2, 1 Osaka Pref. Univ. and 2
JST-CREST, Japan

M.Y. Simmons, Univ. of New South
Wales, Australia

Y. Fujii, T. Kamimura, Y. Ohno, K.
Maehashi, K. Inoue and K.
Matsumoto, Osaka Univ., Japan

Y. Takagi 1, Y. Nobusa 1, S. Gocho 1,
K. Yanagi 2, H. Kataura 3 and T.
Takenobu 1, 1 Waseda Univ., 2 Tokyo
Metropolitan Univ. and 3 AIST, Japan

F. Arai, Nagoya Univ., Japan

1B-6-2
14:10
Polymer Micro-needle Electrodes
coatedwith
Nanoporous
Parylene

1C-6-2
14:20
SiPhononic
CrystalNanostructures for Controlling
Thermal Conduction

1D-6-2
13:50
Quantitative Measurements ofLocal Charge Density at Solid /Liquid Interfaces by FM-AFM

1B-6-3
14:30
A
Post-CMOS
Formation
Process of High Adhesion SU-8
StructuresforReliable
Fabrication of Integrated MEMS
Microsensors

1C-6-3
14:40
Fabrication and Characterizationof A GaAs Nanowire Device
Having Multiple Asymmetric
Gates for Electrical Brownian
Ratchet

1D-6-3
14:10
CarbonNanotube
Photo
Cathode Array based on Si Pn
Junction Photo DiodeY. Nishinaka 1, R. Zen 1, G.S.
Prihandana 1, Y. Ami 1, N. Miki 1,2, 1
Keio Univ. and 2 JST-PRESTO,Japan

Y. Maeda, K. Terao, T. Suzuki, F.
Shimokawa and H. Takao, Kagawa
Univ., Japan

M. Nomura, Univ. of Tokyo, Japan

T. Tanaka, Y. Nakano and S. Kasai,
Hokkaido Univ., Japan-4-

K. Umeda 1, Y. Hirata 2, N. Oyabu 1,
K. Kobayashi 1, K. Kazumi 1 and H.
Yamada 1, 1 Kyoto Univ. and 2 AIST,Japan

Y. Tanaka, H. Miyashita, M. Esashi
and T. Ono, Tohoku Univ., Japan

1A-6-4
14:50
Highly Precise Cross-sectional
Measurement of Photoresist
Shrinkage

T. Ohashi 1, T. Sekiguchi, A.
Yamaguchi 1, J. Tanaka 1 and H.
Kawada 2, 1 Hitachi and 2 Hitachi
High-Technol., Japan

1A-6-515:10
130-kV
High-resolution
Electron-Beam
Lithography
Systemfor
Sub-10nm
Nanofabrication

1B-6-4
14:50
Room
Temperature
Wafer
Bonding of Metal Films using
Flattening by Thermal Imprint
Process

1C-6-415:00
Rectification
Effectsof
ZnO-based
Transparent
Nano-diodes on Glass andFlexible Plastic Substrates

1D-6-414:30
Photothermal
ActuationofCantilevered Multiwall Carbon
Nanotubes
withBi-material
Configuration toward Calorimeter

1B-6 Author's Interview:
15:10-15:20

1C-6 Author's Interview:
15:20-15:30

1D-6 Author's Interview:
14:50-15:00

Y. Kurashima, A. Maeda, R. Takigawa
and H. Takagi, AIST, Japan

Y. Kimura 1, Y. Sun 1, T. Maemoto 1,
S. Sasa 1, S. Kasai 2 and M. Inoue 1,
1 Osaka Inst. of Technol. and 2
Hokkaido Univ., Japan

S. Hiroshima 1, A. Yoshinaka 1, T.
Arie 1,2 and S. Akita 1,2, 1 Osaka
Pref. Univ. and 2 JST-CREST, JapanT. Okino, Y. Kuba , M. Shibata and H.
Ohyi, Crestec, Japan

1A-6 Author's Interview:
15:30-15:40
Robby (4F in front of Zuiten)
Coffee BreakRoom P1 (Kaiou 4F) and Room P2 (Ginga 4F)

1P-7: 15:40-17:40 Poster Session I
Lithography and Metrology
1P-7-1
Expanded Field of View ofMultiple-beam Scanning Electron
Microscope

1P-7-2
Withdrawn

1P-7-3120W
Injection-locked
ArF
Excimer
Laser
forMulti-patterning Lithography

M. Sakakibara, M.Enyama, S.
Tanimoto and and H. Ohta, Hitachi,
Japan

Y. Sasaki, T. Asayama, H. Masuda, T.
Kumazaki, H. Tsushima, A. Kurosu,
K. Kakizaki, T. Matsunaga and H.
Mizoguchi, GIGAPHOTON, Japan

1P-7-4
1Xnm Node Fin-type SRAM
LayoutDesignby
ArF
Computational Lithography and
T-CAD Application
K. Kadota, K. Fukuda, S.O'uchi and
M. Masahara, AIST, Japan

1P-7-5
Estimation
ofElectron
Temperature and Density of the
Decay
PlasmainaLaser-assisted
Discharge
PlasmaExtremeUltraviolet
Source by using a Modified StarkBroadening Method

1P-7-6
Phase Imaging of EUV Mask
using
Coherent
EUV
Scatterometry Microscope

1P-7-7
Impact of Pattern Profile on
PlasmoninComputational
Lithography

1P-7-8
Withdrawn

1P-7-9Extreme Ultraviolet Aberration
Impact on 14 nm Node 6T-SRAM
Design1P-7-10
Lloyd's
MirrorInterference
Lithography using a Single Mode
Fiber Spatial Filter

1P-7-11
Metrology Analysis of Sub-100
nm Grating Patterns using High
Precision Transmission Small
Angle X-ray Scattering Technique

1P-7-106L
Electron
Beam
Current
DependenceofSurface
Potential Distribution at a
Resist Film

1P-7-14
ReactionsofPolymer
Bound/Blend
Photo
Acid
Generators
withSolvated
Electrons and Acid Generation
Efficiency

1P-7-15
Negative Tone Development
Process and Resist Materials
with ArF Immersion Exposure
Process

1P-7-19DevelopmentofHigh-performance-charcoal-com
posite Paper and its Electrical
Conductivity

1P-7-20
Optical Properties of Quantum
Dot consisting of Single-walled
CarbonNanotube/Molecule
Heterojunctions

T. Harada 1,3, M. Nakasuji 1,3, Y.
Nagata 2,3, T. Watanabe 1,3 and H.
Kinoshita 1,3, 1 Univ. of Hyogo, 2
RIKEN and 3 JST-CREST, Japan

S.-K. Kim, Hongik Univ., Korea

T. Muto, Q. Zhu, J. Yamada, N. Kishi,
M. Watanabe and E. Hotta, Tokyo
Inst. of Technol., Japan

S.-E. Tseng and A. Chen, ASML,
TaiwanE.-C. Chang, Y.-L. Sun, P.-T. Lin, D.G.
Mikolas and C.-C. Fu, Natl. Tsing Hua
Univ., Taiwan

J. Lee, B. Park, S. Lee, S. Ban, S.
Moon, T.J. Shin and O. Kim,
POSTECH, Korea

A. Osada, M. Otani, K. Kumagaiand M. Kotera, Osaka Inst. ofTechnol., Japan

Resist Materials and Processing
1P-7-12
DeprotonationofPoly(4-hydroxystyrene)Intermedi
ates: Pulse Radiolysis Study of
EUV and Electron Beam Resist

K. Okamoto 1,2, R. Matsuda 1, T.
Kozawa 2,3, S. Tagawa 2,3, R.
Fujiyoshi 1, T. Sumiyoshi 1, 1
Hokkaido Univ., 2 JST-CREST and 3
Osaka Univ., Japan

1P-7-13The Analytical Mitigation of EUVResist for the High Sensitivity
and the Low LWR using SR
Absorption Spectroscopy

T. Watanabe, D. Shiono, Y.
Haruyama, K. Emura, T. Urayama, K.
Ohmori, K. Sato, T. Harada and H.
Kinoshita, Univ. of Hyogo, Japan

S. Tarutani, FUJIFILM, Japan

S. Enomoto 1,2, D.T. Nguyen 1,2 andS. Tagawa 1,2, 1 Osaka Univ. and 2
JST-CREST, Japan

1P-7-16
Study on Dissolution Behavior of
Polymer-boundandPolymer-blended
Photoacid
Generator Resists

H. Yamamoto 1,2, T. Kozawa 1,2 andS. Tagawa 1,2, 1 Osaka Univ. and 2
JST-CREST, Japan

Nanocarbons
1P-7-17
Electric Property of CNT/n-type
6H-SiC Heterojunctions formedby Surface Decomposition of SiC

T. Yajima, S. Sakakibara, S. Naritsuka
and T. Maruyama, Meijo Univ., Japan

1P-7-18
Nanostructure of PtCo Bimetal
Particles for PEFC

K. Sato 1, T. Onuma 1, K. Iwasawa 1,
M. Eguchi 1, Y. Kobayashi 1, K.
Komatsu 2, M. Kobori 2, M.
Nishitani-Gamo 2, T. Ando 3, 1 Ibaraki
Univ., 2 Toyo Univ. and 3 NIMS,Japan

M. Yoshihara 1, N. Tamura 2 and T.
Oya 1, 1 Yokohama Natl. Univ. and 2
Heigen, Japan-5-

A. Hida and K. Ishibashi, RIKEN,
Japan

1P-7-21
Electronic Properties of Carbon
Nanotubes under the Electric
Field

A. Yamanaka 1 and S. Okada 1,2 1
Univ. of Tsukuba and 2 JST-CREST,Japan

1P-7-25
Energetics
andElectronic
Structures of Alkanes Adsorbedon Graphene

K. Kamiya 1,2 and S. Okada 1,2, 1
Univ. of Tsukuba and 2 JST-CREST,Japan

1P-7-29
Inhibitive Corrosion Graphene
Layers on Stainless SteelSUS304J.-N. Shi 1, N.-W. Pu 2, Y.-M. Liu 1,
N.-T. Wen 3 and M.-D. Ger 1, 1 Natl.
Defense Univ., 2 Yuan Ze Univ. and 3
Chung Shan Inst. of Sci. andTechnol., Taiwan

1P-7-22
Carbon Nanocoil Grown by
Chemical Vapour Deposition on
SiO2
Supported
Pd
Nanoparticles

1P-7-23
Electronic Structures of Bilayer
Graphene under Electric Field

1P-7-26
Phosphorescence of Oxygen
Functional Group on the Zigzag
Edge and Armchair Edge ofGraphene as a Light Source in
Bio-Led

1P-7-27
Graphene as a Buffer Layer for
the Growth of SiC Thin Film on
Insulator on Silicon for Advanced
Heterogeneous Integration

1P-7-28
Chemical
Vapor
Deposited
Large-area
GrapheneforPhotovoltaic Device Application

1P-7-30
Bonding
MechanismofLi-graphene
with
Nitrogen
Defects for Hydrogen Storage

1P-7-31
Performance Enhancement ofElectrically
Conductive
Adhesives using Graphene

1P-7-32
Edge Effects and Mechanical
Deformation
Effectson
Thermoelectric
PowerofGraphene Nanoribbons

S. Konabe and S. Okada, Univ. of
Tsukuba, Japan

W.K. Huang 1, K.J. Chung 1, Y.M. Liu
1, N.W. Pu 2, M.D. Ger 1, 1 Natl.
Defense Univ. and 2 Yuan Ze Univ.,
TaiwanY.H. Su, Natl. Dong Hwa Univ.,
TaiwanS. Lee and Y.-C. Chung, Hanyang
Univ., Korea

B. Astuti 1, S.F.A. Rahman 1, M.
Tanikawa 2, K. Yasui 2 and A.M.
Hashim 1, 1 Univ. Teknologi Malaysia,
Malaysia and 2 Nagaoka Univ. ofTechnol., Japan

W.F. Ke 1, J.Y. Chen 1, G.N. Shi 1,
N.W. Pu 2, Y.M. Liu 1 and M.D. Ger 1,
1 Natl. Defense Univ. and 2 Yuan Ze
Univ., Taiwan

1P-7-24
Work Function Tuning ofGraphene on Water-adsorbed
Corundum Substrate

S.B. Cho and Y.-C. Chung, Hanyang
Univ., Korea

G. Kalita 1, S. Sharma 1, M. Umeno
2, Y. Hayashi 1 and M. Tanemura 1, 1
Nagoya Inst. of Technol. and 2 Chubu
Univ., Japan

T. Kato 1, S. Usui 2, T. Yamamoto 1, 1
Tokyo Univ. of Sci., 2 QuantumWise,
Japan

1P-7-33
Fluorination
ProcessofGraphene using Ar/F2 Plasma

A. Matsutani, K. Tahara, T. Iwasaki
and M. Hatano, Tokyo Inst. ofTechnol., Japan

Nanodevices
1P-7-34
CMOS-compatible Tunnel FETs
with 14 nm Gate, Sigma-shape
Source, and Recessed Channel
M.-C. Sun 1,2, S.W. Kim 1, H.W. Kim
1, H. Kim 1 and B.-G. Park 1, 1 Seoul
Natl. Univ. and 2 Samsung
Electronics, Korea

1P-7-38
High Current Driving of SnO2
Channel Thin Film Transistor
using HfO2/ZrO2 High-k Gate
Dielectrics

Y.-C. Liu 1, C.-H. Wu 2, C.-C. Chang
2, C.-F. Chang 2, Y.-H. Tsai 2, K.-M.
Chang 1 and J.-P. Leu 1, 1 Natl.
Chiao Tung Univ. and 2 Chung Hua
Univ., Taiwan

1P-7-42
InGaAs-Si
Heterojunction
Tunneling Field-effect Transistor
based on Silicon Substrate

S.Y. Woo 1, Y.J. Yoon 1, J.-H. Bae 1,
S. Cho 2, J.-H. Lee 1 and I.M. Kang
1, 1 Kyungpook Natl. Univ., Korea
and 2 Stanford Univ., USA

1P-7-35
Manufacturing P- and N- type Ge
gate-all-around FETs on Si
S.-H. Hsu 1, C.-L. Chu 1, G.-L. Luo 1,
Y.-H. Wang 2, Y.-L. Chen 1, M.-L.
Guo 1, D.-H. Zhou 1, 1 Natl. Nano
Device Labs. and 2 Natl. Chiao Tung
Univ., Taiwan

1P-7-36
Fin Shape Effect on the Electrical
Characteristics of N-channel
FinFET

J.T. Ryu, D.H. Kim and T.W. Kim,
Hanyang Univ., Korea

1P-7-37
Comparative Study of Device
Performance and Bias-stress
Instabilities
inAmorphous
InGaZnO Thin-film Transistors
with Various High-k Gate
Dielectrics
S.-W.
Lee
and
W.-J.
Kwangwoon Univ., Korea

Cho,

1P-7-39
Comparative Analysis of Top andBottom Contact Organic Thin
Film Transistors and Contact
Resistance Estimation by 2-D
Simulations

1P-7-40
Effect of Cooling Condition on
Molecular Distribution quenchedin
CrystalGrainsinaSolution-processed
Organic
Thin-film Transistor

1P-7-41
Investigation on Effects of
Changing
Body
DopingConcentration in Short-channel
Junctionless Transistor

1P-7-43
The Enhancement of Detection
Limit by Selective Modification on
Ultra-Thin Body Field-EffectTransistor

1P-7-44
Collision based Computing forArrayedSingle-electron
Oscillators

1P-7-45
Characterization of GaAs-based
Three-branch Nanowire Junction
Devices by Light-induced Local
Resistance Modulation Method

1P-7-47
NADP+-functionalized Quantum
Dots for the Detection of
γ-Aminobutyric Acid

1P-7-48Multifunctional
Core-shell
Nanoparticles as Bioanalytical
Tools for in vitro Tracking of
DNA-transfection

1P-7-49
Effects of CdSe Quantum Dot
Concentration
onthePerformance of P3HT:PCBM
Solar Cells

1P-7-52
pH Sensing Characteristics ofExtended
Gate
Field-effect-transistor based on
Amorphous InGaZnO Thin Films

1P-7-53
Symmetric Linear Polarization of
Photoluminescence
from
InGaAs-buried InAs Quantum
Dots controlled by Temperature

K. Bhargava, P.A. Palod, A. Bilgaiyan
and V. Singh, Indian Inst. of Technol.
Indore, India

H.H. Liu, T.H. Lin and J.T. Sheu, Natl.
Chiao Tung Univ., Taiwan

J.-H. Bae, J.-S. Park and H.-R. Kim,
Kyungpook Natl. Univ., Korea

S. Hayashi and T. Oya, Yokohama
Natl. Univ., Japan

H.W. Kim 1, M.-C. Sun 1,2, S.W. Kim
1, J.Y. Seo 1, G. Kim 1, J.H. Kim 1
and B.-G. Park 1, 1 Seoul Natl. Univ.
and 2 Samsung Electronics, Korea

M. Sato and S. Kasai, Hokkaido
Univ., Japan

Nanomaterials
1P-7-46
Annealing and Recrystallizationof Polyvinylidenefluoride-trifluoroethylene (70:30 mol %) Thin Film

M.H. Wahid 1,2, A.N. Arshad 1, M.D.
Rozana 1, S.Z. Saad 1, M. Rusop 1
and W.H. Majid 2, 1 Univ. Teknologi
MARA and 2 Univ. Malaya, Malaysia

1P-7-50
Electrochemistry Assisted Laser
Ablation in Liquids: A General
StrategyforFabricating
Polyoxometalate Nanostructures

P. Liu, Y. Liang, X.Z. Lin and G.W.
Yang, Sun Yat-sen Univ., China

Z. Fei and J.S. Kim, Gachon Univ.,
Korea

1P-7-51
Exploring
Index
MatchedTransparent Conducting Oxide
Material for Liquid Crystal on Si
Projection Display

S.Y. Park, J.H. Lee and B.H. Choi,
Korea Inst. of Industrial Technol.,
Korea

N. Reinhardt, L. Adumeau, O.
Lambert, P. Bonafous, S. Ravaine
and S. Mornet, Université Bordeaux,FranceJ.-G. Gu, H.-J. Jang and W.-J. Cho,
Kwangwoon Univ., Korea-6-E.-K. Park 1, H.M. Choi 2, D. Han 1,
I.A. Ji 2, J.H. Bang 2 and Y.-S. Kim 1,
1 Myongji Univ. and 2 Hanyang Univ.,
Korea

K. Kikushima 1, T. Tanaka 1, S.
Nakashima 1,2 and K. Mukai 1, 1
Yokohama Natl. Univ. and 2 RIKEN,
Japan

1P-7-54
Thermal Stability of AlN Layer
formed by Translational Kinetic
Energy induced N2 Adsorption on
Al(111) Surface
M. Jinno 1,2, Y. Teraoka 1,2, T.
Takaoka 3, J.R. Harris 1, R. Okada
1,4, Y. Iwai 1,2, A. Yoshigoe 1 and T.
Komeda 3, 1 JAEA, 2 Univ. of Hyogo,
3 Tohoku Univ. and 4 Univ. of
Tsukuba, Japan

1P-7-55
Stability of Lithium Adatom
Adsorption on Hexagonal Boron
Nitride Monolayer: Van der
Waals Density Functional Theory

Y. Hwang and Y.-C. Chung, Hanyang
Univ., Korea

1P-7-56
Improved Barrier Properties
using Al2O3 Single Layer ofOrganic Light Emitting Diode
Lighting Devices

M.R. Kim, J.H. Lee and B.H. Choi,
Korea Inst. of Industrial Technol.,Korea

1P-7-57
Effect of Organic Semiconductor
Film Formation on the Magnitudeof the Interfacial Trap Density in a
Low-voltage Operated Thin-film
Transistor
J.-H. Bae, H.G. Lee and I.M. Kang,
Kyungpook Natl. Univ., Korea

1P-7-58
Nonvolatile Organic Memory
Devices with CdSe or CdTe
Nanoparticles
H.-G. Kim 1, M.-J. Gim 1, H.-J. Jeon
1, M. Kim 1, S.-H. Yoo 2, J.-M. Kim 2
and Y.-S. Kim 2, 1 Gyeonggi Sci. HighSchool and 2 Myongji Univ., Korea

Nano Tool
1P-7-59
Thermally-isolated
Resonant
Thermal Sensor Probe

N. Inomata and T. Ono, Tohoku Univ.,
Japan

1P-7-60
Piezoelectric Optical-absorption
Spectroscopy of a GaAs/AlGaAs
Heterostructure using Cantilever
Mechanical Resonance

1P-7-61High Sensitive Si Cantilevers for
Magnetic Resonance ForceMicroscopy

1P-7-62
Contactleess Sheet Resistivity
Measurement using Magnetic
Force Microscopy

1P-7-64
Interaction Force Measurement
between Antigens and Antibodies
using
CarbonNanotube
Cantilevers

1P-7-65
FabricationofSuperparamagnetic
Nano-particles having Various
Diameters by Strict Controlling ofMagnetic Material Thickness

1P-7-66
Welding of Thin Pt Wires having
Different Diameters by Joule
Heating

1P-7-70
Impact of Residual Strain in an
Organic Functional Martial during
Thermal Nanoimprint Process

1P-7-71
Optical
Evaluationof
Photoinduced Liquid Crystalline
Polymer Pattern fabricated by
Thermal Nanoimprinting withLinearly Polarized UV Irradiation

T. Watanabe 1,2, H. Okamoto 1, K.
Onomitsu 1 and H. Yamaguchi 1,2, 1
NTT and 2 Tohoku Univ., Japan

1P-7-63
EvaluationofResonance
Detection Properties on Vibration
Measurement of the MechanicalResonator using Scanning Probe
Microscope
R. Kometani, S. Mifune, S. Warisawa
and S. Ishihara, Univ. of Tokyo, Japan

Y. Terada 1, S. Akita 1,2 and T. Arie
1,2, 1 Osaka Pref. Univ. and 2
JST-CREST, Japan

M. Toda, Y.J. Seo, Y. Kawai, H.
Miyashita and T. Ono, Tohoku Univ.,
Japan

F. Wakaya, M. Kajiwara, S. Abo and
M. Takai, Osaka Univ., Japan

M. Fujimori, H. Tohmyoh, and M.
Saka, Tohoku Univ., Japan

H. Kim 1, H. Terazono 1, H. Takei 1,2
and K. Yasuda 1,3, 1 Kanagawa
Academy of Sci. and Technol., 2 Toyo
Univ. and 3 Tokyo Medical and Dental
Univ., Japan

1P-7-67
Fabrication of a Mechanically
ExfoliatedGraphene
Edge
Emmiter on a Tungsten Probeand its Field Emission Properties
K. Murakami, K. Yoshida, R. Ueki andJ. Fujita, Univ. of Tsukuba, Japan

Nanoimprint, Nanoprint and Rising Lithographyano
1P-7-68
Developmentof
Cleaning
Process for UV Cured Resin
Removal on Quartz Substrate for
Nanoimprint Lithography

M.-S. Kim 1, B.-K. Kang 1, J.-S. Lim
1, J.-H. Jeong 1, J.-K. Kim 2, B.-K.
Lee 2 and J.-G. Park 1, 1 Hanyang
Univ. and 2 Samsung Electronics,
Korea

1P-7-72
A Study of the Roller Imprinting
Technology applied to Patterned
Sapphire Substrate

S.-C. Yeh 1, Y.-Y. Chou 1, Y.-C. Lee 1,
P.-J. Tsai 2, J.-W. Pan 2, H.-M. Chou
3, C.-H. Hou 3, Y.-Y. Chang 4, M.-S.
Chu 4, M.-L. Hu 4 and C.-H. Ho 4, 1
Chung Yuan Christian Univ., 2 Natl.
Chiao Tung Univ., 3 Lextar
Electronics and 4 Procrystal Technol.,Taiwan1P-7-76
The
Gasbag-assisted
Side-emitting
UV-curing
Imprinting
ProcessforLarge-area
ReplicationofMicrostructures

Y.-Y. Huang, C.-H. Yang, N.-W.
Chang and S.-Y. Yang, Natl. Taiwan
Univ., Taiwan

1P-7-69
Mechanical
Properties
ofBiodegradable
Polylactide
Structuresfabricatedusing
Thermal Nanoimprint

P.-T. Teng, F.-Y. Chang, T.-H. Tsai,
Taiwan Univ. of Sci. and Technol.,TaiwanT. Shiotsu, N. Nishikura, M. Yasuda,
H. Kawata and Y. Hirai, Osaka Pref.
Univ., Japan

1P-7-73
Ultraviolet-curable
ResinscomprisingaDiacrylate
Monomer Hardly Absorbing
Condensable
Pentafluoropropane (PFP) Gas
to achieve High Throughput in
Ultraviolet Nanoimprinting using
PFP

1P-7-74
Selective Grating Fabrication on
Ti-diffused
Waveguides
in
LiNbO3 by Imprint Lithography

1P-7-77
Computational
Studyon
Molecular
OrientationofPolymersin
Nanoimprint
Lithography

1P-7-78
Thickness
Dependency
Polymerization Efficiency
UV-nanoimprint Resins

M. Nakao, S. Nakajima, S. Shinada
and T. Kawanishi, Natl. Inst. ofInformation and Communications
Technol., JapanM. Okada 1, E. Nishioka 1, M. Kondo
1, Y. Haruyama1, T. Sasaki 2, H. Ono
2, N. Kawatsuki 1 and S. Matsui 1, 1
Univ. of Hyogo and 2 Nagaoka Univ.
of Technol., Japan

1P-7-75
Enhanced Light Extraction fromRed
PhosphorFilmsvia
Nano-imprint Lithography using
Zirconia Nanoparticles

K.-K. Kim 1, E.-J. Her 1, K.-Y. Ko 2,
T.H. Won 2 and J. Ahn 1, 1 Hanyang
Univ. and 2 Korea Inst. of Patent
Information, Korea

S. Kaneko 1, C.Y. Min 1 and M.
Nakagawa 1,2, 1 Tohoku Univ. and 2
JST-CREST, Japan

R. Takai 1, M. Yasuda 1, K. Tada 2, H.
Kawata 1 and Y. Hirai 1, 1 Osaka
Pref. Univ. and 2 Toyama Natl.
College of Technol., Japanofon

Y. Sawada 1,5, H. Miyake 2, T.
Ohsaki 3, M. Okada 1,5, S. Iyoshi 1,5,
Y. Haruyama 1,5, H. Hiroshima 4,5
and S. Matsui 1,5, 1 Univ. of Hyogo, 2
Daicel, 3 Toyo Gosei, 4 AIST and 5
JST-CREST, Japan-7-

1P-7-79
Low-temperature Firing of Ag-Cu
Nanoparticles
duringDirectNanoimprinting

H. Tambo, Y. Yokoyama and Y. Sakai,
Toyama Industrial Technol. Center,Japan

BioMEMS, Lab on a Chip
1P-7-80
Isolating Circulating Tumor Cells
from Peripheral Blood with Large
Volumeutilizing
Dielectrophoresis in Reversing
Stepping Electric Fields

1P-7-81Bright Transmitted-fluorescence
Images of Neurons cultured on a
Plasmonic
Chip
with
Fluorescence Microscope

1P-7-82
MicropatterningofSingleMammalian
Cells
on
the
Chitosan Substrate for Drug
Screening

1P-7-83
Single-cell Isolation and Sizing ofMicroorganisms
byMicroenclosure
Array
with
Multipillar Structure

1P-7-84
Ultra High-speed Microdroplet
Polymerase Chain Reaction
System for Three-step Reverse
Transcription of Single Cells
using On-chip Three-channel
Switching High-speed Liquid
Circulating Module

1P-7-85
Surface Roughness of Cells as
Index
ofLabel-free
Cell
Identification and Separation in
On-chip Imaging Cell Sorting
System

1P-7-86
Novel Single Cell Extraction
Methodcombinedwith
Biomimetic
Cell
Surface
Modification and Microfluidic
Device1P-7-87
Interaction Kinetics of Proteinsconfined within a Nanocavity
evaluatedby
Real-timeSingle-molecule
Fluorescence
Imaging

1P-7-88
Developmentof
Production
Method of Protein Microarray
Chips via Puromycin Technology

1P-7-89A
Microstructure-embedded
Microfluidic Chip for Continuous
Sample Separating Applications

1P-7-90
Development of Wafer-level
Fabrication Process for SiO2
based Nanowell Array Chip andits Characterization

1P-7-91
Application of the ZnO-coatedPlasmonic Chip immobilized with
Anti-ZnO Antibody to Biosensing

1P-7-94
Fabrication of a Polylactide
Micro-needle
Array
using
Transfer Mold Technique forTransdermal Drug Delivery

1P-7-95
Quantitative
Evaluationof
Quasi-electrocardiogram
Measurement for Direct Predictionof Lethal Arrhythmic Beating
Occurrence using Ring-shaped
Cardiomyocyte Network with Ring
Electrode Array

H.-H. Wu, G.-H. Chen, C.-T. Huang
and C.-P. Jen, Natl. Chung Cheng
Univ., Taiwan

H. Terazono 1, H. Kim 1, H. Takei 2,
A. Hattori 3, T. Kaneko 3, K. Yasuda
1,3, 1 Kanagawa Academy of Sci.
and Technol., 2 Toyo Univ. and 3
Tokyo Medical and Dental Univ.,
Japan

S.R. Kumal 1, M. Biyani 1,2 and T.
Ichiki 1,2, 1 Univ. of Tokyo and 2
JST-CREST, Japan

1P-7-92
Rapid and Sensitive
Detection with Zinc
Coating Plasmonic Chip

BDNF
Oxide

M. Satoh 1,2 , K. Tawa 1, K. Uegaki 1,
T. Hara 1, M. Umetsu 3, H. Nakazawa
3, I. Kumagai 3, H. Aota 2 and M.
Kojima 1, 1 AIST, 2 Kansai Univ. and3 Tohoku Univ., Japan

C. Yasui 1,2, C. Hosokawa 1, T. Fujita
1,3, J. Nishi 4, H. Aota 2, K. Tawa 1,3,
1 AIST, 2 Kansai Univ. 3 Kwansei
Gakuin Univ. and 4 Hokkaido Univ.,Japan

A. Hattori 1,2, T. Kaneko 1, F. Nomura
1 and K. Yasuda 1,2, 1 Tokyo Medical
and Dental Univ. and 2 Kanagawa
Academy of Sci. and Technol., Japan

S.K. Hsiung 1, R.C. Lin 1, H.C. Lee 2,
Y.F. Chen 3, C.T. Wu 3 and C.H. Lin
2, 1 Fooyin Univ., 2 Natl. Sun Yat-Sen
Univ. and 3 Gene Target Technol.,Taiwan1P-7-93
Development of On-chip Dual
Measurement
Systemfor
Cardiac Contraction Fluctuation
Assay
using
Simultaneous
Recording of Extracellular Field
Potential and Optical Image

H.H. Shuai, C.Y. Yang, J.A. Yeh andC.M. Cheng, Natl. Tsing Hua Univ.,
TaiwanA. Hibino 1, Y. Okamoto 1, T. Yasui 1,
N. Kaji 1, M. Tokeshi 1,2 and Y. Baba
1,3, 1 Nagoya Univ., 2 Hokkaido Univ.
and 3 AIST, Japan

S.-H. Cho 1, J.-K. Lee 2, J.-H. Lee 1,
H.Y. Lee 2 and J.-G. Park 1, 1
Hanyang Univ. and 2 Northeastern
Univ., Korea

A. Baba, Kyushu Inst. of Technol.,Japan

T. Kaneko, F. Nomura, T. Hamada, A.
Hattori and K. Yasuda, Tokyo Medical
and Dental Univ., Japan

A. Matsutani and A. Takada, Tokyo
Inst. of Technol., JapanS. Ryu 1, S. Higano 1, K. Ohkubo 1,
Y. Asano 1, A. Inoue 1, T. Ueno 2, T.
Funatsu 2, T. Tanii 1, 1 Waseda Univ.
and 2 Univ. of Tokyo, Japan

K. Tawa 1, C. Sasakawa 1, M.
Umetsu 2, H. Nakasawa 2 and I.
Kumagai 2, 1 AIST and 2 Tohoku
Univ., Japan

F. Nomura, T. Kaneko, H. Hattori andK. Yasuda, Tokyo Medical and Dental
Univ., Japan

Microsystem Technology and MEMS (Advanced Micro Devices)
1P-7-96
Fabrication of Silicon Microdisk
Resonators with MonolithicallyIntegrated
Comb-drive
Microactuators

1P-7-97
Very Low Voltage Nickel MEMS
Switch based on Dynamic
Driving Method

1P-7-99
Theoretical Study on Sensitivityof Planar Vibration Sensor

Y. Sato, Y. Kanamori and K. Hane,
Tohoku Univ., JapanY. Komai, R. Kitamura, H. Tanigawa
and K. Suzuki, Ritsumeikan Univ.,
Japan

1P-7-98
Implementation of a DETF
Resonator in a Wafer-level
0.18-μm CMOS MEMS Process

1P-7-100
Structural and Material Design for
Piezoelectric Energy Harvester
using Vibration

1P-7-101High Efficiency Near-infrared
Detection using Deep-trench
Photo-diode1P-7-102An Infrared Detector Array with
Incident-ray
Concentrating
Structure

1P-7-103Electrolytic Tilt Sensor with
Domed Cavity for Improvementin Response Time

1P-7-104
All-polymer Tilt Sensor with
Conductive Polydimethylsiloxane
Electrodes

1P-7-105Electrostatically Driven Peristaltic
Pump

NEOARK CORPORATIONCarl Zeiss Microscopy Co.,Ltd.

E. Komine 1, K. Sueshige 1, T. Suga1, M. Ichiki 2,3 and T. Ito 2, 1 Univ. ofTokyo, 2 AIST and 3 JST-PRESTO,
Japan

J.K. Lee, J.C. Choi, D.G. Jung, Y.C.
Choi and S.H. Kong, Kyungpook Natl.
Univ., Korea

T. Matsuda and A. Baba, Kyushu Inst.
of Technol., Japan

S.-H. Tseng, Y.-J. Hung, H.-H. Tsaiand Y.-Z. Juang, Natl. Applied Res.
Labs., Taiwan

J.C. Choi 1, Y.C. Choi 1, D.G. Jung 1,
J.K. Lee 1, W.I. Jang 2 and S.H. Kong
1, 1 Kyungpook Natl. Univ. and 2
ETRI., Korea

L. Zhang, J. Lu, H. Takagi and R.
Maeda, AIST, Japan

J.C. Choi, Y.C. Choi, D.G. Jung, J.K.
Lee and S.H. Kong, Kyungpook Natl.
Univ., Korea

B. Kim1, K.S. Lee 2 and M.A.
Shannon 2, 1 Catholic Univ. ofDaegu, Korea and 2 Univ. of Illinois,
USA

Commercial Session (Technical Exhibitor)
GenISys GmbHNTT Advanced Technology
Corporation

Nanoscribe GmbHHOLON CO., LTD.
Room A (Zuiten Nishi 4F)

18:00-20:00 Banquet
MNC 2012 Prof. Namba Award Ceremony
Performance by Samba Show

-8-

Friday, November 2
Room A (Zuiten Nishi 4F)

Room B (Zuiten Naka 4F)

Room C (Zuiten Higashi 4F)

2D-8:
9:00-10:20
Nanofabrication I
Chairpersons:T. Hasunuma (Univ. of Tsukuba)
K. Kita (Univ. of Tokyo)

C:

2B-8: 9:00-10:00 Advanced
Micro Devices
Chairpersons:
M. Sohgawa (Osaka Univ.)
T. Sakata (NTT)

2C-8:
Nanomaterials III
Chairpersons:T. Chikyo (NIMS)
T. Ishida (AIST)

2A-8-1
9:00
Self-Assembled Lithography andPotential
Applications
toElectronic Devices (Invited)

2B-8-1
9:00
VariableResonant-frequency
Tuning for Fishbone-shaped
MEMS Resonator based on
Multi-physics Simulator

2C-8-1
Withdrawn

2B-8-2
9:20
Coupling
Properties
ofFreestanding Silicon Nanowire
Waveguide Couplers with a
Gap-variable Mechanism

H. Yoshida, Hitachi, JapanY. Akihama, Y. Munemasa, Y.
Kanamori and K. Hane, Tohoku Univ.,Japan

2C-8-2
9:20
PEGylated
Silsesquioxane
Nanoimprintable
Material

2A-8-3
10:00
Directed
Self-assemblyfor
Functional
CarbonNanostructures (Invited)

2B-8-3
9:40
High Throughput Size-oriented
Passive Droplet Sorting Device
using Surface Free Energy with
Simple Parallel Guide Grooves

2C-8-3
9:40
Dynamic Pattern Formation of
Liquid Crystals caused by Mixed
Self-assembled Monolayer of Ru
ComplexandInsulating
Molecules immobilized on ITO

2D-8-3
9:40
Fabrication of the Ordered Arrayof Optical Centers in Diamond by
Low Energy Ion Implantation

2C-8-4
10:00
Conjugated Polymer-dependent
Opto-electrical Characteristics of
Near Infrared Hybrid Solar Cells

2D-8-4
10:00
Anodic Condition Dependence ofCurrent–voltage Characteristic ofResistive Change Memory using
Anodic Porous Alumina

2A-8: 9:00-10:30 Symp.
Directed Self Assembly I
Chairpersons:T. Yamaguchi (NTT)
H. Kudo (Kansai Univ.)

K. Asakawa, A. Hieno, S. Hattori, H.
Nakamura, T. Nakanishi, R. Kitagawa
and A. Fujimoto, Toshiba, Japan

2A-8-2
9:30
Chemical Epitaxy of Highly
Segregating Block Copolymers
for Single-Digit Nano Patterning(Invited)

S.O. Kim, KAIST, Korea

2D-8-1
9:00
Biomolecular Adsorption Control
for CNT-domain Fabrication

I. Hanasaki 1, Y. Isono 1,3, B. Zheng
2,3, Y. Uraoka 2,3 and I. Yamashita
2,3, 1 Kobe Univ., 2 Nara Inst. of Sci.
and Technol. and 3 JST-CREST,Japan

S. Kuroda, N. Suzuki, H. Tanigawa
and K. Suzuki, Ritsumeikan Univ.,Japan

Y. Harada, S. Numakunai, D.H. Yoon,
T. Sekiguchi and S. Shoji, Waseda
Univ., Japan

2A-8 Author's Interview:
12:15-12:25

9:20-10:20

Room D (Tenku 5F)

2B-8 Author's Interview:
10:00-10:10

Photocurable
for
Antibiofouling

B.K. Lee, D.-P. Kim, J.-H. Ryu, J.
Park, Y.-S. Jeong, K.-H. Baek andL.-M. Do, ETRI, Korea

T. Ishida 1, M. Oyama 1, K. Terada 1
and M. Haga 2, 1 AIST and 2 Chuo
Univ., Japan

M. Nam, S. Kim, M. Kang, S.-W. Kim
and K.-K. Lee, Ajou Univ., Korea

2C-8 Author's Interview:
11:55-12:05

2D-8-2
9:20
Phosphorus Incorporation in
4H-SiC by Irradiation of Excimer
Laser in Phosphoric Solution

K. Nishi, A. Ikeda, H. Ikenoue and T.
Asano, Kyushu Univ., Japan

A. Komatsubara 1, T. Teraji 2, M. Hori
1, K. Kumagai 1, S. Tamura 1, T.
Ohshima 3, S. Onoda 3, T.
Yamamoto 3, C. Müller 4, B.
Naydenov 4, L. McGuinness 4, F.
Jelezko 4, T. Tanii 1, T. Shinada 5 and
J. Isoya 6, 1 Waseda Univ., 2 NIMS, 3
JAEA, Japan, 4 Ulm Univ., Germany,
5 AIST and 6 Univ. of Tsukuba, Japan

S. Furuya 1, S. Otsuka 2, T. Shimizu
2, S. Shingubara 2, T. Watanabe 1, Y.
Takano 1 and K. Takase 1, 1 Nihon
Univ. and 2 Kansai Univ., Japan

2D-8 Author's Interview:
11:45-11:55

Robby (4F in front of Zuiten)
Coffee BreakRoom A (Zuiten Nishi 4F)

Room B (Zuiten Naka 4F)

Room C (Zuiten Higashi 4F)

Room D (Tenku 5F)

2A-9: Symp. C: Directed Self
Assembly II
Chairpersons:T. Azuma (Toshiba)
T. Hirayama (Tokyo Ohka)

2B-9: BioMEMS, Lab on a Chip
II
Chairpersons:T. Ichiki (Univ. of Tokyo)
Y. Takamura (JAIST)

2C-9: Nanomaterials IV
Chairpersons:T. Ishida (AIST)
X.W. Zhao (Tokyo Univ. of Sci)

2D-9: Nanofabrication II
Chairpersons:S. Shingubara (Kansai Univ.)
T. Asahi (Ehime Univ.)

2A-9-1
10:45
Extendingthepatterning
capability
using
directedself-assembly (Invited)

2B-9-1
10:25
A Lab-on-Chip System for
Rapid SNP Diagnostics from
Human Blood (Invited)

2C-9-1
10:35
StrongAdhesionof
Metal-encrusted Polymer onto
Plastic Substrates

2D-9-1
10:35
Nanopore Based Ionic Field
Effect transistor for DNA
Manipulation (Invited)

J. Cheng 1, J. Pitera 1, G. Doerk 1,
C.-C. Liu 1, M. Tjio 1, C. Rettner 1,
H. Troung 1, H. Tsai 2, K. Lai 3, M.
Guillorn 2 and D. Sanders 1, 1 IBM
Almaden Res. Ctr., 2 IBM Watson
Res. Ctr. and 3 IBM Semicon. Res.
and Develop. Ctr., USA

I. Yamashita 1 and P. Fiorini 2
Panasonic, Japan and 2 IMEC,
Belgium

J. Kawakita, Y. Hashimoto and T.
Chikyo, NIMS, Japan-9-

M.-H. Lee, K.-B. Park, D.-J. Lee,
H.-M. Kim and K.-B. Kim, Seoul
Natl. Univ., Korea

2A-9-2
11:15
Lithography Processes using
Directed Self-assembly (Invited)

M. Muramatsu 1 and K. Tanouchi 1, T.
Tomita 1, T. Kitano 1 and S.
Nagahara 2, 1 Tokyo Electron
Kyushu and 2 Tokyo Electron, Japan

2A-9-3
11:45
Block Copolymer Orientation
Control using a Top-Coat Surface
Treatment (Invited)

T. Seshimo, C.M. Baates, M.J. Maher,
W.J. Durand, J.D. Cushen, L.M.
Dean, G. Blachut, C.J. Ellison, C.G.
Willson, Univ. of Texas at Austin, USA

2A-9 Author's Interview:
12:15-12:25

2B-9-2
10:55
MultiplexedandLabel-free
Detection Platform Combining
LSPR and Microfluidics

2C-9-2
10:55
Adaptability of DLC Film as
Electronic Transmission Window

2D-9-2
11:05
PrintedNanostructures

2B-9-3
11:15
A
Smart
Gel-coupled
Biotransistor as a New Basic for
Biosensing

2C-9-311:15
PhotoluminescenceandElectronic
Properties
ofNanocrystalline Si doped SiO2
Thin
Films
formedby
Co-sputtering

2D-9-3
11:25
Large-area Bi-layer Wire-gridPolarizers for Deep-ultraviolet toInfrared using EUV Interference
Lithography and Nano Imprint
Lithography

Y. Zhang 1,2, Y. Tang 1, Y.-H. Hsieh 3,
C.-Y. Hsu 3, J. Xi 2, K.-J. Lin 3 and X.
Jiang 1, 1 Natl. Center for Nanosci.
and Technol., 2 Peking Univ., China
and 3 Natl. Chung Hsing Univ.,
TaiwanA. Matsumoto, Y. Maeda and Y.
Miyahara, Tokyo Medical and Dental
Univ., Japan

2B-9-4
11:35
Fabrication of Nanostructured
Silicon Surface for Integrated
Microfluidic Separation and Mass
Spectrometry

T. Kozuki 1, N. Nawachi 2 and K. Itoh2, 1 Hiroshima Internatl. Univ. and 2
Hiroshima Pref.Technol. Res. Inst.,
Japan

K. Hirata, T. Kogawa, Y. Komori and
H. Katsumata, Meiji Univ., Japan

Acousto-optical

T. Kehoe1, J. Gomis-Bresco 1, J.
Cuffe 1, F. Alzina 1, V. Reboud 1,2 D.
Mendels 3 and C.M. Sotomayor
Torres 1,4,5, 1 Catalan Inst. of
Nanotechnol. Spain, 2 CEA-Leti, 3
Cognoscens, France, 4 ICREA and 5
UAB, Spain

L. Wang 1, H.H. Solak 3 and Y. Ekinci
1,2, 1 Paul Scherrer Inst., 2 ETH
Zurich and 3 Eulitha, Switzerland

2C-9-4
Withdrawn

K.-H. Chen and C.-W. Tsao, Natl.
Central Univ., Taiwan

2B-9 Author's Interview:
14:10-14:20

2C-9 Author's Interview:
11:35-11:45

2D-9 Author's Interview:
11:45-11:55

Room A (Zuiten Nishi 4F)

Room B (Zuiten Naka 4F)

Room C (Zuiten Higashi 4F)

Room D (Tenku 5F)

2A-10: Resists and DSA
Materials and Processing
Chairpersons:
H. Yamamoto (Osaka Univ.)
K. Nozaki (Fujitsu)

2B-10: BioMEMS, Lab on a
Chip III
Chairpersons:A. Matsumoto (Tokyo Medical
and Dental Univ.)
Y. Murakami (Toyohashi Univ.
of Technol.)
2B-10-1
13:10
Paper-based ELISA for Detecting
Various Diseases (Invited)

2A-10-1
13:40
EUV Resist Materials andProcess Development for 16nm
Half Pitch (Invited)
M. Shimizu and T. Kimura, JSR,Japan

2A-10-2
14:10
Stochastic Effects and Resist
Variability in High Resolution
Lithography

A.V. Pret 1,2, R. Gronheid 1, K.
Garidis 1,3 and J. Biafore 4, 1 IMEC,
Belgium, 2 Kungliga Tekniska
Högskolan, Sweden, 3 Katholieke
Univ. Leuven, Belgium and 4
KLA-Tencor, USA

C.-M. Cheng, Natl. Tsing Hua Univ.,
Taiwan2D-10: Nanofabrication III
Chairpersons:
K.-B. Kim (Seoul Natl. Univ.)
T. Hasegawa (NIMS)

2C-10-1
13:20
In situ Transmission Electron
Microscopy of Single MolecularJunctionsusing
CarbonNanocapsules
Encapsulating
Cobalt and Cobalt Carbide

2D-10-1
13:20
Integration of III-V Nanowires on
Si and Device Applications(Invited)

2C-10-2
13:40
Non Jump-to-contact Approach
between Tungsten Nanotips

2D-10-2
13:50
Control of Crystal Orientation andDiameter of Si Nanowire using
AnodicAluminum
Oxide
Template

D. Matsuura and T. Kizuka, Univ. of
Tsukuba, Japan

2B-10-2
13:40
Fabrication of Pneumatic Valvewith Dome-shape Fluid Chamber

C.K. Oh, D.K. Lee and O.C. Jeong,
Inje Univ., Korea

H. Masuda and T. Kizuka, Univ. of
Tsukuba, Japan

K. Tomioka 1,2, M. Yoshimura 1 andT. Fukui 1, 1 Hokkaido Univ. and 2
JST-PRESTO, Japan

T. Shimizu and S. Shingubara, Kansai
Univ., Japan

2A-10-3
14:30
An in situ Analysis of the
Dissolution Characteristics ofHalf Pitch Line and Space EUVResist Patterns

2B-10-3
14:00
Study on the Vortex Behaviour in
Micro Scale Chamber for the
Trapping of Particles

2A-10-4
14:50
Sub-30 nm Contact Hole
Process Study using Directed
Self-assembly Lithography

2B-10 Author's Interview:
14:20-14:30

J.J. Santillan and T. Itani, EIDEC,Japan

2C-10: Nanomaterials V
Chairpersons:T. Chikyo (NIMS)
T. Tanii (Waseda Univ.)

B. Sharma 1,2, Y. Ukita 1 and Y.
Takamura 1, 1 JAIST and 2 Univ. ofDelhi, India

2C-10-3
14:00
In situ Observation of Formation
Process of Negative Electron
Affinity Surface of GaAs by
Surface Photo-absorption

2D-10-3
14:10
Orientation-stabilized
Lateral-growth of Ge-on-insulator
Nano-wires
byRapid-melting-process

2C-10 Author's Interview:
14:20-14:30

2D-10 Author's Interview:
14:30-14:40

K. Hayase 1, T. Nishitani 2,3, K.
Suzuki 1, H. Imai 1, J. Hasegawa 1,
D. Namba 1 and T. Meguro 1, 1
Tokyo Univ. of Sci., 2 Nagoya Univ.
and 3 RIKEN, Japan

H. Yonemitsu, H. Sato, Y. Seino, H.
Kato, M. Kanno, K. Kobayashi, A.
Kawanishi, K. Kodera and T. Azuma,
Toshiba, Japan

2A-10 Author's Interview:
15:10-15:20- 10 -

M. Anisuzzaman 1, S. Muta 1, M.
Takahashi 1, A.M. Hashim 1,2, M.
Miyao 1 and T. Sadoh 1, 1 Kyushu
Univ., Japan and 2 Univ. Teknologi
Malaysia, Malaysia

Room P1 (Kaiou 4F) and Room P2 (Ginga 4F)

2P-11: 14:40-16:40 Poster Session II
Nanocarbons
2P-11-1Fabricated the Field Emission
Lamp
with
CarbonNanocoils-graphene
SheetsHybrids

K.J. Chung 1, Y.M. Liu 1, N.W. Pu 2,
M.D. Ger 1, C.A. Wang 1, 1 Natl.
Defense Univ. and 2 Yuan Ze Univ.,
Taiwan2P-11-2
Improvements of the SpecificCapacity
andHigh-rate
Capability in Li Ion Batteries by
Adding Graphene
P.C. Wang 1, C.H. Wu 1, G.N. Shi 1,
N.W. Pu 2, Y.M. Liu 1 and M.D. Ger 1,
1 Natl. Defense Univ. and 2 Yuan Ze
Univ., Taiwan

2P-11-3
Transfer of Graphene onto theAnode of Organic Light Emitting
DiodesT.L. Liu 1, G.N. Shi 2, N.W. Pu 1, K.C.
Liu 3, C.H. Wu 3, 1 Yuan Ze Univ., 2
Natl. Defense Univ. and 3 Chang
Gung Univ., Taiwan

2P-11-4
Boron-doped
Ultrananocrystalline Diamond /NonhydrogenatedAmorphous
Carbon Composite Films by
Coaxial Arc Plasma Deposition
Y. Katamune, S. Ohmagari, T.
Hanada and T. Yoshitake, Kyushu
Univ., Japan

2P-11-5Fabrication of Cu-based Carbon
Nanotube Composite Coating byusing an Ultrasonic-assisted
Electroplating Method

2P-11-6
Giant Chemiresistive ResponsetoGas
Molecules
from
Semiconducting
single-walled
Carbon Nanotube Network

2P-11-7
Low Temperature SWNT Growthfrom Pt Catalyst using Alcohol
Gas Source Method in High
Vacuum

2P-11-8
Interfacial Nanostructure of thePolymer Electrolyte Fuel Cell
Catalyst Layer constructed withDifferent Ionomer Contents

2P-11-9
Carbon Nanofoam Encapsulating
Pt Nanoparticles formed by Laser
Ablation of Graphite in Liquid
Nitrogen

2P-11-10n-TypeUltrananocrystalline
Diamond/HydrogenatedAmorphous Carbon Composite
Films prepared by Coaxial Arc
Plasma Deposition

2P-11-11
Heavily Incorporated Nitrogen
into
Ultrananocrystalline
Diamond/HydrogenatedAmorphous Carbon prepared byPulsed Laser Deposition

2P-11-12
New Elemental Semiconductorsof Fused Small Fullerenes

2P-11-14
Electrochemical Performance ofHighly Porous Carbon Nanofiber
for Non-aqueous Lithium-air
Battery

2P-11-15
Insitu
Non-destructive
Impedance Spectroscopic Studyof Zn-porphyrin/C60 Heterojunction Solar Cells

2P-11-16
Topological Line-defect InducedBand Offset in Hexagonal Boron
Nitride2P-11-114L
Plasma-oxidized Al2O3 for Gate
Dielectrics in Graphene Field
Effect Transistors

2P-11-115L
Position-controlled
DirectGraphene Synthesis on SiO2
Surface by Laser Irradiation

2P-11-116L
Highly Sensitive Biosensors
Based on Fragment-modified
Graphene FET

G.-H. Park, M.-H. Jung, S. Inomata,H. Fukidome, T. Suemitsu, T. Otsuji
and M. Suemitsu, Tohoku Univ.,
Japan

K. Koshida, K. Gumi, Y. Ohno, K.
Maehashi, K. Inoue and K.
Matsumoto, Osaka Univ., JapanS. Okamoto, T. Ikuta, S. Zaifuddin,
Y. Ohno, K. Maehashi, K. Inoueand K. Matsumoto, Osaka Univ.,
Japan

2P-11-19
Electrical Properties of Organic
Bistable
Devicesfabricatedutilizing
Multi-core-shell
CdSe/CdS/ZnS
Nanoparticles
Inserted the WO3 Layer

2P-11-20
Differentiation of Two Reset
Operations in Pt/Cu/TiO2/Pt
Stacked RRAMs

2P-11-21
BipolarResistive
SwitchingCharacteristics
of
Solution-processed HfO2 for
Next-generation
Non-volatile
Memory Applications

2P-11-23
Fabrication of Hybrid-hyperlens
for Superresolution Imaging

2P-11-24
Withdrawn

T. Suzuki, M. Kato, T. Fujino and H.
Saito, Yamagata Res. Inst. ofTechnol., Japan

H. Kohno, K. Tatsutani and S.
Ichikawa, Osaka Univ., Japan

2P-11-13
First-principles Simulations ofGraphene Dual-double Gate
Transistors
M. Ohfuchi, Fujitsu Labs., Japan

H. Tabata and M. Katayama, Osaka
Univ., Japan

H. Gima, S. Al-Riyami and T.
Yoshitake, Kyushu Univ., Japan

M.J. Song, I.T. Kim, Y.B. Kim and
M.W. Shin, Yonsei Univ., Korea

2P-11-17
Ultrastable Aqueous Graphite
Nanofluids
preparedbySingle-step Liquid-phase Pulsed
Laser Ablation (LP-PLA)

S.-W. Yun 1, M.-Y. Choi 1, D.-S. Kim
1, D.-S. Hong 2, J.-H. Kim 2 and Y.-T.
Kim 1, 1 Pusan Natl. Univ. and 2
N-BAROTECH, Korea

H. Kondo 1, N. Fukuoka 1, Y.
Mizutani 1, R. Ghosh 1, S. Naritsuka
1, T. Maruyama 1, S. Iijima 1,2, 1
Meijo Univ. and 2 AIST, Japan

K. Baba 1, T. Onuma 1, K. Iwasawa
1, M. Eguchi 1, Y. Kobayashi 1, K.
Komatsu 2, M. Kobori 2, M.
Nishitani-Gamo 2, T. Ando 3, 1 Ibaraki
Univ., 2 Toyo Univ. and 3 NIMS,Japan

M. Maruyama 1 and S. Okada 1,2, 1
Univ. of Tsukuba and 2 JST-CREST,Japan

S. Al-Riyami, H. Gima and T.
Yoshitake, Kyushu Univ., JapanS. Ryuzaki 1 and J. Onoe 2, 1 Osaka
Univ. and 2 Tokyo Inst. of Technol.,Japan

Y. Tomita 1,2 and S. Okada 1,2, 1
Univ. of Tsukuba and 2 JST-CREST,Japan

Nanodevices
2P-11-18
Body Doping Profile of SelectDevice to Minimize Program
Disturbance in 3-D Stack NAND
Flash Memory
B.-I. Choe 1,2, B.-G. Park 1 and J.-H.
Lee 1, 1 Seoul Natl. Univ. and 2
Samsung Electronics, Korea

2P-11-22
UV Polarization Sensor using
Photo-induced Anisotropic Dipole
Moment in Photochromic Dye
Film with Patterned Orientation

D.H. Park, M.-K. Park, C.-S. Park,
J.-S. Park, S.-H. Kim and H.-R. Kim,
Kyungpook Natl. Univ., Korea

2P-11-26
CoupledInGaAsQuantum
Dots-in-a-well Solar Cell

K.Y. Chuang, T.E. Tzeng and T.S.
Lay, Natl. Sun Yat-Sen Univ., Taiwan

C.H. Yoo, S.H. Ko and T.W. Kim,
Hanyang Univ., Korea

S. Jung, J.-H. Oh, K.-C. Ryoo, S. Kim
and B.-G. Park, Seoul Natl. Univ.,
Korea

P.L. Chen 1, Y.H. Lin 1, W.H. Cho 1,
B.H. Cheng 2, Y.Z. Ho 3, M.H. Shiao
1, H.N. Lin 4 and D.P. Tsai 3,5, 1 Natl.
Applied Res. Labs., 2 Natl. Cheng
Kung Univ., 3 Natl. Taiwan Univ., 4Natl. Tsing Hua Univ. and 5 Academia
Sinica, Taiwan

2P-11-27
A cTnT Biosensor by using
Nano-Patterned
Conductive
Molecule CB2C
H.-T. Hsueh, C.-C. Peng and C.-T.
Lin, Natl. Taiwan Univ., Taiwan

D.-H.
Lee
and
W.-J.
Kwangwoon Univ., Korea

Cho,

2P-11-25
Radiative
Recombination
Enhancement
byDifferent
Indium Composition Multiple
Quantum Barriers in GaN Based
Leds

E. Park 1, G. Kim 1, W. Kim 1, J. Kim
1, D. Kang 2, J.-K. Son 2 and B.-G.
Park 1, 1 Seoul Natl. Univ. and 2
Samsung Electronics, Korea

2P-11-28
Developmentof
CarbonNanostructure Based Highly
Transparent and Flexible Field
Emitter
D. Ghosh, P. Ghosh, T. Noda, Y.
Hayashi and M. Tanemura, Nagoya
Inst. of Technol., Japan- 11 -

Nanofabrication
2P-11-29
Withdrawn

2P-11-30
Enhancing Air Retention by
Bio-mimicking Salvinia Molesta
Micro-structures

2P-11-31
Flexible InP Nanowire Arrayobtained by Epitaxial Growth andPeeling Off Process

2P-11-32
Localized Electroless Ag Plating
at a Tip Apex for Scanning Kelvin
Probe Microscopy

2P-11-33
Effect of Collision of Plumes on
FormationofCompound
Nanocrystal by Double Laser
Ablation

2P-11-34
Insertion of Particles into
Sub-100 nm Porous Structures
by Electrophoresis Method

2P-11-35
Crystallization of Surface Layer
of Magnetic Films with Gas
Cluster ion Beams

2P-11-36
Fabrication of Sub-wavelength
Antireflective
StructureandEnhance the Efficiency of
InGaAs Solar Cells

2P-11-37
Photoemission
Analysis
Oxidation States formed
Supersonic O2 Beams
Ge(111)-c(2×8) Surface

2P-11-38
Enhancement of Oxidation ofGe(100)-2×1 Surface caused bySupersonic O2 Molecular Beams

C.-Y. Yang, C.-Y. Yang and C.-K.
Sung, Natl. Tsing Hua Univ., Taiwan

Y. Hashiguchi 1, H. Fukuoka 2, N.
Sakamoto 3, Y. Yokoyama 1, A.
Sugimura 1 and I. Umezu 1, 1 Konan
Univ., 2 Nara Natl. Coll. of Technol.
and 3 Iwaki Meisei Univ., Japan

of
by
on

R. Okada 1,2, A. Yoshigoe 1, Y.
Teraoka 1,3, A. Jinno 1,3, Y. Yamada
2 and M. Sasaki 2, 1 JAEA, 2 Univ. of
Tsukuba and 3 Univ. of Hyogo, JapanK. Kusdianto, K. Sasaki and I.W.
Lenggoro, Tokyo Univ. of Agriculture
and Technol., Japan

A. Yoshigoe 1, R. Okada 1,2, Y.
Teraoka 1,3, A. Jinno 1,3, Y. Yamada
2 and M. Sasaki 2, 1 JAEA, 2 Univ. of
Tsukuba and 3 Univ. of Hyogo, Japan

T. Endo 1, E. Nakai 1, M. Yoshimura
1, K. Tomioka 1,2 and T. Fukui 1, 1
Hokkaido Univ. and 2 JST-PRESTO,
Japan

N. Toyoda, A. Yamaguchi, A. Fujimotoand I. Yamada, Univ. of Hyogo, Japan

2P-11-39
Nanocrystalline
V-dopedCaCu3Ti4O12 Powders preparedby a Simple PEG Sol-gel Method
and its Giant Dielectric Properties
N. Sangwong and P. Thongbai, Khon
Kaen Univ., Thailand

C.-T. Lin 1, M.-H. Yu 2, J. Su 1, P.-L.
Chen 1, M.-H. Shiao 1 and M.-N.
Chang 2, 1 Natl. Applied Res. Labs.
and 2 Natl. Chung Hsing Univ.,
TaiwanC.-C. Chang, Y.-Y. Chou, and Y.-C.
Lee, Chung Yuan Christian Univ.,
Taiwan2P-11-40
Fabrication of the Metal Slit
Pattern for Angle controlled
Lateral Electric Field to InAs /GaAs QDs and their Optical
Properties
S. Odashima 1, H. Nakajima 1,2 andI. Suemune 1, 1 Hokkaido Univ. and 2
JSPS, Japan

2P-11-41
Formationof
SiliconSupersaturated
with
Deep
Impurities by Pulsed Laser
Melting Method

2P-11-42
Fabrication of Nanostructured
Cu2ZnSnS4
using
Electrodeposition
with AAO
Template

2P-11-43
Rectifying
OpticalAntenna
Array–sensing and Light Energy
Harvesting

2P-11-45
Selective Adsorption of Ta2O5
Nanoparticles synthesized by
Biomineralization

2P-11-46
Nanopore Based Ionic
Effect Transistor

2P-11-47
Height
and
Edge
Shape
Correction on the Nanostructure
Fabrication by Focused-ionbeam Chemical Vapor Deposition

2P-11-48
Surface Plasmon Effect on
Emission
Efficiency
of
InGaN/GaN Multi-quantum Wells
by Stripe Patterned Silver Film

2P-11-117L
Role of Au Nanoparticle
Decoration on Cross-linked
WO3 Nanodomes for Selective
Gas Sensing

2P-11-118L
DirectEB
PatterningofFunctional Oxide Mask on
Non-plant Surfaces Applied for
GaAs Nanostructures

2P-11-53
Preparation of Ti-Si-C Thin Films
by Magnetron Sputtering using
Elemental Targets at Low
Temperatures

2P-11-54
Temperature-dependent
Interlayer Coupling in Fe3Si/FeSi2
Artificial Lattices

D. Kawabe, Y. Matsuda, A. Sugimura
and I. Umezu, Konan Univ., Japan

T. Ban 1,2, M. Uenuma 1,2, Y.
Ishikawa 1,2, I. Yamashita 1,2 and Y.
Uraoka 1, 2, 1 Nara Inst. of Sci. andTechnol. and 2 JST-CREST, Japan

2P-11-49
Fabrication of the High Density
Capacitors for the Embedded
Substrate using the Hydrophobicand Hydrophilic Properties of
SAM

Y. Tanaka 1, C. Wang 1, A. Kondou 1,
T. Terui 2, S. Tanaka 2, T. Shimizu 1
and S. Shingubara 1, 1 Kansai Univ.
and 2 Natl. Inst. of Information andCommunications Technol., Japan

Field

M.-H. Lee, S.-W. Nam and K.-B. Kim,
Seoul Natl. Univ., Korea

M.Y. Kang 1, M.-H. Lee 1, H.-M. Kim
1, G. Fernandes 2, J. Xu 1,2 andK.-B. Kim 1, 1 Seoul Natl. Univ.,
Korea and 2 Brown Univ., USA

Y. Murao, R. Kometani, S. Warisawa
and S. Ishihara, Univ. of Tokyo, Japan

2P-11-50
Low-cost Patterning Process for
the Fabrication of Sub-32 nm
Devices

S. Pauliac-Vaujour, P. Brianceau and
C. Comboroure, CEA-LETI, France

M. Ichiki 1,3, S. Makino 2 and B.J.
Kim 2, 1 AIST, 2 Univ. of Tokyo and 3
JST-PRESTO, Japan

Y.-S. Shim 1,2, H.G. Moon 1, D.H.
Kim 1, H.W. Jang 3, Y.S. Yoon 2, 1
KIST , 2 Yonsei Univ. and 3 Seoul
Natl. Univ., Korea

2P-11-44
Temperature Dependence ofResistanceofConductive
Filament formed by Dielectric
Breakdown

S. Otsuka, T. Kato, T. Kyomi, Y.
Hamada, Y. Tada, T. Shimizu and S.
Shingubara, Kansai Univ., Japan

K.S. Lee, S.P. Kim, D.U. Lee and E.K.
Kim, Hanyang Univ., Korea

Y. Matsuoka, K. Ashida and T.
Kaneko, Kwansei Gakuin Univ.,Japan

Nanomaterials
2P-11-51
Growth of Ultrananocrystalline
Diamond/amorphous
CarbonComposite Film by Laser
Ablation of Graphite in Nitrogen
Atmosphere

2P-11-52
Electron Transmission Properties
of Diamond-like Carbon Film

2P-11-55
Preparation of Patterned ZnO
Nanowires Arrays using Porous
PMMA Templates for the
Improvement of Light Output
Power of GaN Based LEDs

2P-11-56
Growth of Electroplated Zn
Seeds/ZnO
Nanorods
andChemical Selective Etching of
ZnO Nanotubes on Transparent
Conductive
Substrates
by
Aqueous Solution

2P-11-57
Growthof
AlignedSingle-crystalline TiO2 Nanorod
Arrayson
Transparent
Conducting Oxide Coated Glass

2P-11-58
PreparationoftheMorphology-controllable
Hexagonal WO3 Nanorods by aHydrothermal Method

2P-11-60
Rapid Synthesis
NanowiresbyPlasma-enhanced
Vapor Deposition

2P-11-61
Carbon-coated
Magnetite
Clusters (nFe3O4) as an AnodeMaterial for Improved Li-ion
Batteries

2P-11-62
Effect of Nitrogen Precursor on
Growth of GaAs(N) Nanowires

S. Al-Riyami, H. Gima and T.
Yoshitake, Kyushu Univ., JapanT.-H. Lin, Y.-W. Hsu, Y.-C. Tu, P.-R.
Wang, F.-S. Tsai and S.-J. Wang,
Natl. Cheng Kung Univ., Taiwan

2P-11-59
Fluorescence Enhancement Via
Local
Synthesisof
ZnO
NanowiresinMicrofluidic
DevicesC.-H. Sang 1, C.-C. Chen 2 and J.-T.
Sheu 1, 1 Natl. Chiao Tung Univ. and
2 Natl. Applied Res. Labs., Taiwan

N. Nawachi 1, K. Itoh 1 and T. Kozuki
2, 1 Hiroshima Pref. Technol. Res.
Inst. and 2 Hiroshima Internatl. Univ.,
Japan

C.M. Yang 1, M.H. Hona 2 and I.C.
Leu 1, 1 Natl. Univ. of Tainan and 2
Natl. Cheng Kung Univ., Taiwan

of V2O5
Microwave
Chemical

M.W. Huang 1, F.S. Shieu 1 and H.C.
Shih 1,2, 1 Natl. Chung Hsing Univ.
and 2 Chinese Culture Univ., Taiwan

T. Sonoda, S. Nakao
Ikeyama, AIST, Japan

and

M.

J.-C. Tsai 1, M.-H. Hon 1 and I.-C.
Leu 2, 1 Natl. Cheng Kung Univ. and
2 Natl. Univ. of Tainan, Taiwan

H.D. Oh, S.-E. Kim and S.-W. Lee,
Gachon Univ., Korea- 12 -

K. Sakai 1, Y. Noda 2, D. Tsumagari
2, T. Sonoda 2, S. Hirakawa 2, K.
Takeda 3 and T. Yoshitake 2, 1
Kurume Natl. Coll. of Technol., 2
Kyushu Univ. and 3 Fukuoka Inst. ofTechnol., Japan

C.-H. Lu 1, M.H. Hon 1 and I.-C. Leu
2, 1 Natl. Cheng Kung Univ. and 2
Natl. Univ. of Tainan, Taiwan

K. Sakai, T. Haraguchi, T. Yamauchi,
T. Suzuki and T. Ikari, Univ. ofMiyazaki, Japan

2P-11-63
Structure and Conductance ofAtomic-sized Tungsten Contacts

H. Masuda and T. Kizuka, Univ. of
Tsukuba, Japan

2P-11-64
Insitu
High-resolution
Transmission
Electron
Microscopy of Deformation of
Aluminum Nanocontacts
T. Ohko and T. Kizuka, Univ. of
Tsukuba, Japan

2P-11-65
First-principle Calculation of
ConductanceofSingle-atom-width Gold Wiresusing Structural Models obtained
from Transmission Electron
Microscopy

2P-11-66
Measurement of Critical Shear
Stress in Nanometer-sized Goldby in situ High-resolution
Transmission
Electron
Microscopy

2P-11-69
Dielectric
Properties
CaCu3Ti4O12/BaTiO3
Nanocomposites

2P-11-70
Synthesis and Structure Analysis
Of La0.5Sr0.5TiO3 Nanoparticle
preparedbyThermalDecomposition Method

R. Kimikoube and T. Kizuka, Univ. of
Tsukuba, Japan

2P-11-67
ChacracterizationofMIS
capacitor with PMMA:TiO2 as
Insulator

L.N. Ismail, N.N. Hafizah, N.S.M.
Sauki, A. Zain, S.H. Herman and M.
Rusop, Univ. Teknologi MARA,
Malaysia

2P-11-71
Characterization of TiO2/Carbon
Composite Nanostructure for
Lithium Ion Battery

K. Iwasawa 1, K. Miyoshi 1, S. Ueda
1, M. Eguchi 1, Y. Kobayashi 1, M.
Kobori 2, M. Nishitani-Gamo 2 and T.
Ando 3, 1 Ibaraki Univ., 2 Toyo Univ.
and 3 NIMS, Japan

2P-11-119L
Hydrothermal Synthesis andElectrochemical
Characterization of TiO2(B)Nanosheets for Battery
Application

H.Y. Wu 1, M.H. Hon 1, C.Y. Kuan
1 and I.C. Leu 2, 1 National Cheng
Kung Univ. and 2 Natl. Univ. of
Tainan, Taiwan

2P-11-68
Interface
Dependent
Mangeoelectricity of FePt-BaTiO3Heterojunction
M. Lee and Y.-C. Chung, Hanyang
Univ., Korea

2P-11-72
Visible Electroluminescence of a
Sm-doped
n-TiO2/p-NiO/p+-Si
Light Emitting DiodeT. Ohtsuki 1, S. Harako 1, S. Komuro
2 and X. Zhao 1, 1 Tokyo Univ. of Sci.
and 2 Toyo Univ., JapanofJ. Jumpatam and P. Thongbai, Khon
Kaen Univ., Thailand

2P-11-73
Characteristics of Nickel Oxide
Thin Films formed by RF
Magnetron Sputtering

T. Obata 1, S. Harako 1, S. Tanaka 1,
S. Komuro 2, G. Wang 3 and X. Zhao
1, 1 Tokyo Univ. of Sci., 2 Toyo Univ.,
Japan and 3 Tianjin Univ. of Technol.
and Education, China

T. Iijima and T. Kizuka, Univ. of
Tsukuba, JapanL. Wannasen and E. Swatsitang,
Khon Kaen Univ., Thailand

2P-11-74
Light Output Improvement of
GaN-based
Light-emitting
Diodes using Hydrothermally
Grown ZnO Nanotapers

Y.-C. Tu, S.-J. Wang, J.-C. Lin, F.-S.
Tsai, T.-H. Lin and P.-R. Wang, Natl.
Cheng Kung Univ., Taiwan

2P-11-120L
Photophysical Properties ofEuropium doped Ceramics
Nanoparticles in Bio/medical
Polymer Matrix

S. Abe 1, Y. Hamba 1, S. Yamagata
1, M. Uo 2, J. Iida 1, T. Kiba 1, A.
Murayama 1 and F. Watari 1, 1
Hokkaido Univ. and 2 Tokyo
Medical and Dental Univ., Japan

Nanoimprint, Nanoprint and Rising Lithography
2P-11-75
Fine Metal Mask Fabrication for
Plasma Etching by Electroless Ni
Plating

2P-11-76
Control of Resin Filling andPattern Quality of Ultraviolet
Nanoimprint Lithography byPentafluoropropane and Helium
Ambience

2P-11-77
Novel Hetero Structured Organic
Photovoltaics(OPV)byMulti-layered Direct Nanoimprint

2P-11-79
Evaluation of Interaction Forcebetween UV Resin and F-SAMs
by Dynamic Contact Angle
Measurement in PFP Gas
Ambient

2P-11-80
DirectMetal
Imprinted
Nanostructures with Antireflectiveand Enhanced Transmittance

2P-11-81
Large
Area
Flatness
Measurement and Optimizationfor Step and Repeat UV
Nanoimprinting

2P-11-82
Fabrication of Highly Ordered
Nanoimpint
Stamp
using
Nanosphere Lithography with
Guide Line Pattern

2P-11-83
Evaluation of De-molding Energy
for
VariousMolds
andDe-molding Modes

2P-11-84
Impacts of Side Wall Profile on
Demolding Force for Imprint
Process

2P-11-85
Resolution Limits of FluorescentNanoimprinted
Patterns
on
Fluorescence
Microscopic
Observation

2P-11-86
Improvement of Un-filling Defectin
Low-pressure
ThermalNanoinprintusinghydrofluoroether

2P-11-88
ImprovementofSensing
Properties using Parasitic BJT
Read Method on the OHA Gate
Dielectric EGFET

2P-11-89
Investigation of Gas-liquid Phase
Microdroplet
Formation
Mechanism in Microchannel

2P-11-90
Continuous Density GradientCentrifugation using a Centrifugal
Microfluidic Device

2P-11-92
Clepsydra-based Autonomous
Flow Sequencer with Liquid Trap
Reservoir

2P-11-93
Batteryless Love Wave-based
Neural Probe and its Wireless
Characterization

2P-11-94
Preparation of a Glucose/Oxygen
Biofuel Cell based on Carbon
Nanotube

T. Kitagawa 1, H. Kawata 1,2, M.
Yasuda 1,2 and Y. Hirai 1,2, 1 Osaka
Pref. Univ. and 2 JST-CREST, Japan

M. Chinen 1,3, Y. Kang 1,3,4, M.
Okada 1,3, Y. Haruyama 1,3, H.
Hiroshima 2,3 and S. Matsui 1,3, 1
Univ. of Hyogo, 2 AIST, 3 JST-CREST
and 4 JSPS, Japan

T. Nishino 1,2, N. Fujikawa 1,2, H.
Kawata 1,2 and Y. Hirai 1,2, 1 Osaka
Pref. Univ. and 2 JST-CREST, Japan

S.-W. Youn 1,2, K. Suzuki 1,2, Q.
Wang 1,2 and H. Hiroshima 1,2, 1
AIST and 2 JST-CREST, Japan

S.-G. Sung, J.-H. Lee, J.-H. Jeong,
E.-S. Lee and J.-H. Choi, Korea Inst.
of Machinery & Materials, Korea

H. Kawata 1,2, H. Noma 1,2, N.
Fujikawa 1,2, H. Okuno 1, M. Yasuda
1,2 and Y. Hirai 1,2, 1 Osaka Pref.
Univ. and 2 JST-CREST, Japan

K. Tomohiro 1, K. Tada 2, M. Ishikawa
2, H. Fujita 1, N. Nishikura 1, H.
Kawata 1 and Y. Hirai 1, 1 Osaka
Pref. Univ. and 2 Toyama Natl.
College of Technol., Japan

K. Ishibashi 1,2, H. Goto 2, J. Mizuno
1 and S. Shoji 1, 1 Waseda Univ. and2 Toshiba-Machince, Japan

S. Kubo 1, T. Tomioka 1 and M.
Nakagawa 1,2, 1 Tohoku Univ. and 2
JST-CREST, Japan

2P-11-78
Gold
Nanoparticles
Self-assembly assisted with
Imprinted HSQ Pattern for SERS
Measurement
Y. Kang 1,2, R. Takahashi 1, T.
Fukuoka 1, Y. Utsumi 1, M. Okada 1,
Y. Haruyama 1 and S. Matsui 1, 1
Univ. of Hyogo and 2 JSPS, Japan

S.K. Lim 1, S.H. Nasasw 1, E.M. Park1, J.S. Kim 1, S.H. Ra 2 and S.J. Suh
1, 1 Sungkyunkwan Univ. and 2
Samsung Electro-Mechanics, Korea

H. Mekaru and H. Hiroshima, AIST,Japan

BioMEMS, Lab on a Chip
2P-11-87
Effect of Surface Morphology on
Performance of Micro-coil forConcentrated Magnetic Beads

C.-C. Chen, S.-H. Hsu, C.-C. Yang,
C.-M. Wu and C.-M. Huang, Natl.
Applied Res. Labs., Taiwan

2P-11-91
Fabrication of PTFE Micro Fluidic
Chip for Processing of Amino
Acid Derivatization
H. Kido 1, I. Okada 2, Y. Utsumi 1, T.
Asami 1 and H. Mita 3, 1 Univ. of
Hyogo, 2 Nagoya Univ. and 3
Fukuoka Inst. of Technol., Japan

J.-K. Park, T.-E. Bae and W.-J. Cho,
Kwangwoon Univ., Korea

M. Ishizawa 1, H. Nose 1, Y. Ukita 2
and Y. Utsumi 1, 1 Univ. of Hyogo and2 JAIST, Japan

C.W Chung, K.S Jhen and C.W Tsao,
Natl. Central Univ., Taiwan

I.K. Jung, H. Oh and K. Lee, Ajou
Univ., Korea- 13 -

T. Oguro, Y. Ukita and Y. Takamura,
JAIST, Japan

L.T.M. Nguyen, M.H. Koo and H.H.
Yoon, Gachon Univ., Korea

2P-11-95
Photocatalytic Decomposition ofOrganosilane Monolayer on TiO2
and its Application to In-situ
Modification of a Cell-culture
Surface

2P-11-96
Proposal of Particle Size Sorting
Method by Surface Acoustic
Wave Actuator

2P-11-99
HumanPlacenta-derived
Multipotent Stem Cells (PDMCs)
Culture and Derivation on a
Microfluidic Chip

T. Demura 1, H. Yamamoto 2, M.
Morita 1, S. Kono 1, S. Nakamura 2,
T. Tanii 1, 1 Waseda Univ. and 2
Tokyo Univ. of Agriculture andTechnol., Japan

M.-Z. Chiang and C.-W. Tsao, Natl.
Central Univ., Taiwan

2P-11-97
Passive LOVE Wave Biosensor
for Simultaneous Detection ofMultiple Elements in a Single
Sensor

2P-11-98
Electrokinetic
ProteinPreconcentrationusing
Nanochannels
CreatedbyNanoparticle Deposition

2P-11-100
High Performance of Fully
Depleted SOI Based Dual Gate
Ion-sensitive
Field-effectTransistor
using
the
Solution-processed
Al2O3
Sensing Membranes

2P-11-101
Dual Detection of DNAs by using
Quantum
Dots
Based
Microfluidic Chip

2P-11-102
Optofluidic Device with SERS
Active Three Dimensional Gold
Nanostructure

2P-11-122L
Withdrawn

2P-11-123L
FabricationofHydrophilic
Polydimethylsiloxane (PDMS)
with Wrinkled Surface
D.K. Lee, C.K. Oh, and O.C.
Jeong, Inje Univ, Korea

Y. Arisue 1, T. Saiki 2, K. Kuramoto 1,
Y. Hata 1, H. Shizuka 1, K. Maenaka
1 and Y. Utsumi 1, 1.Univ. of Hyogo
and 2 Hyogo Pref. Inst. of Technol.,Japan

H. Oh, K.J. Lee, J.-H. Kim, S.S. Yang
and K. Lee, Ajou Univ., Korea

H.N. Noh and J.S. Kim, Gachon
Univ., Korea

C.-L. Ma, C.-C. Kuo and C.-P. Jen,
Natl. Chung Cheng Univ., Taiwan

R. Takahashi, T. Fukuoka and Y.
Utsumi, Univ. of Hyogo, Japan

T.-E. Bae, H.-J. Jang and W.-J. Cho,
Kwangwoon Univ., Korea

2P-11-121L
Sensor Application Based on
CVD-synthesized Graphene
S. Zaifuddin 1, S. Okamoto 1,
Y. Ohno 1, T. Ikuta 1, K.
Maehashi 1, M. Miyake 1,2 andK. Matsumoto 1, 1 Osaka Univ.
and 2 AIXTRON, Japan

Microsystem Technology and MEMS
2P-11-103
A Simple and Effective One Step
Transfer Method of Hydrophobic
Surface on Polyester Fabric
H. Hafeez, S.-H. Cho, D.-H. Han,
Y.-G. Seo and J.-G. Park, Hanyang
Univ., Korea

2P-11-107
Laminated Capacitor formed in
Thermoplastic Resin Substrateby Laser-assisted Micro Powder
Jet Implantation

K. Suzuki 1, S. Kameya 1, T. Sugai 1,
H. Ohuchi 1, K. Miura 2 and T.
Kuriyagawa 3, 1 Sendai Natl. College
of Technol., 2 Miura Sensor Res. and3 Tohoku Univ., Japan

2P-11-104
Peeling Property and Applicationof Ferroelectric Thin Film
Structure

F. Honda 1, T. Hosono 1, M. Fujino 1,
T. Suga 1, M. Ichiki 2,3 and T. Itoh 2,
1 Univ. of Tokyo, 2 AIST and 3
JST-PRESTO, Japan

2P-11-108
SquareMicrolens
Arraysfabricated by Pinning UV Curable
Polymers on the Partition Walls
formed on Polymeric Substrates

S. Yasuda and K. Shimizu, Fuji
Xerox, Japan

2P-11-111
A Study of the Effect of Current
Density
DistributioninElectrochemical Etching Process
for Metal Mold Fabrication byExperimentandNumerical
Method

2P-11-112
3D Anisotropic Wet Etching
Simulate for Z-plate Quartz
Wafer Rectangle Groove Etching

2P-11-125L
Dry Etching of Quartz Glassusing C4F8/He Plasmas for
Microtrenches with Photoresist
and Metal Mask

2P-11-126L
Design and Fabrication of Tip
attached MEMS Test Socket

M. Zhao, H. Ohigawa, J. Ji and T.
Ueda, Waseda Univ., Japan

2P-11-105
Study on Homogeneous Wafer
Level Dielectric Film Preparation
using
ChemicalSolution
Deposition Method

2P-11-106
Nano-size Structure for Optical
Device Application

2P-11-109
A High-efficiency Beam Splitter ofa Double-groove Blazed Grating
using
Ultra-precision
Manufacturing

2P-11-110
Directional
DifferenceofPatterning Characteristics inScan-projection
Lithographyusing a Gradient Index Lens
Array

K. Sueshige 1, T. Suga 1, M. Ichiki 2,3
and T. Itoh 2, 1 Univ. of Tokyo, 2 AIST
and 3 JST-PRESTO, JapanJ.-H. Hsu 1, C.-H. Lee 2 and R. Chen
1, 1 Natl. Tsing Hua Univ. and 2 Feng
Chia Univ., Taiwan

2P-11-113
Influences of UV-Exposure Doseon Adhesive Strength between a
Micro-sized SU-8 Component
and a Si Substrate

C. Ishiyama, Tokyo Inst. of Technol.,Japan

H.-Y. Ryu 1, H.-S. Im 2, S.-H. Cho 1,
B.-J. Hwang 2, S.-H. Lee 2 and J.-G.
Park 1, 1 Hanyang Univ. and 2
KITECH, Korea

Y.-H. Tang, M.-J. Huang and M.-H.
Shiao, Natl. Applied Res. Labs.,
TaiwanJ.M. Lee 1, S.W. Kim 1, J.W. Nam
2, B.H. Kim 3, C.S. Cho 4 and H.S.
Choi 1, 1 DGIST, Korea, 2CoreMEMS, USA, 3 Catholic Univ.
of Daegu and 4 Kyungpook Natl.
Univ., Korea

2P-11-127L
Fabrication of High Resolution
TactileSensorUsing
Through-Si-via Technology
H. Yokoyama 1, M. Sohgawa 1, T.
Kanashima 1, M. Okuyama 1 and
H. Noma 2, 1 Osaka Univ. and 2
Advanced
Telecommunications
Res. Inst. Internatl., Japan- 14 -

D.Y. Kong 1, J.H. Oh 1, B.H. Kim 2,
C.S. Cho 1 and J.H. Lee 1, 1
Kyungpook Natl. Univ. and 2 Catholic
Univ. of Daegu, Korea

T. Horiuchi, T. Suzuki and H.
Kobayashi, Tokyo Denki Univ., Japan

2P-11-124L
Supporting
Optimization
High-Frequency
Resonator

StructureforaQuartzJ. Ji, H. Ohigawa, M. Zhao and H.
Yu, T. Ueda, Waseda Univ., Japan

2P-11-128L
High-responsivity Wavelengthselective
Gate/body-tied
MOSFET-type Photodetector
with Metal-grating
S.-H. Jo 1, H.H. Lee 1, M. Bae 1, J.
Choi 1, J. Ahn 1, S. Kim 1, H.-K.
Lyu 2 and J.-K. Shin 1, 1
Kyungpook Natl. Univ. and 2
Daegu-Gyeongbuk Inst. of Sci. andTechnol., Korea Kyungpook Natl.
Univ. and 2 Daegu-Gyeongbuk Inst.
of Sci. and Technol., Korea