Tuesday, November 17, 2009
Room P (3F)
17P-1:Plenary Session
Chairpersons:S. Akita (Osaka Pref. Univ.)
T. Kozawa (Osaka Univ.)
17P-1-0 9:30
Opening Remark: S. Shoji (Waseda Univ.)
General Information: T. Itani (Selete)Award Presentaion: T. Meguro (Tokyo Univ. of Sci.)
MNC 2008 Outstanding Paper, Most Impressive Presentation and Young Autho’s Award
17P-1-1 9:50
Lithography for the 22 nm Half-Pitch and Beyond (Plenary)
S. Wurm, SEMATECH / GlobalFoundries, USA
17P-1-2 10:30
Modeling Optical Lithography Physics (Plenary)
A. Neureuther 1, J. Rubinstein 1, E. Chin 1, L. Wang 1, M. Miller 1, C. Clifford 1 and K. Yamazoe 1, 2
1 Univ. of CA, Berkeley, USA and 2 Canon, Japan
17P-1-3 11:10
III-V Semiconductor Nanowires: From Growth to Device Applications (Plenary)T. Fukui, K. Tomioka, S. Hara, K. Hiruma and J. Motohisa, Hokkaido Univ., Japan
Lunch
Room A (3F)
17A-2: DUV, EUV Lithography
Chairpersons:
N. Hirayanagi (Nikon)
J. Kitano (Tokyo Electron)
17A-2-1 13:30
Current Status and Challenges of Optical
Lithography (Invited)
T. Uchiyama
NEC Electronics, Japan

Room B (3F)
17B-2: Symposium B: Graphene Growth &Characterization I

Room C (3F)
17C-2: Nanoimprint, Nanoprint and Rising
Lithography I

Chairpersons:
M. Nagase (NTT)M. Nihei (Fujitsu)
17B-2-1 13:30
Epitaxial Graphene on SiC: Structure andElectronic Properties (Invited)
U. Starke
Max-Planck-Inst., Germany

Chairpersons:
A. Yokoo (NTT)Q. Xia (HP)
17C-2-1 13:30
Nanopatterning of 3D Surfaces based on
Nanoimprint Lithography – the EU Project
NaPANIL (Invited)
H. SchiftPaul Scherrer Inst., Switzerland
17C-2-2 14:00
UV Nanoimprint in Pentafluoropropane at a
Minimal Imprint Pressure
H. Hiroshima 1,2, H. Atobe 1,2, Q. Wang 1,2
and S.-W. Youn 1,2
1 AIST and 2 CREST-JST, Japan

17A-2-2 14:00
Resolution Enhancement for beyond 22nm
Node using EUV Exposure Tool
K. Tawarayama, H. Aoyama, K. Matsunaga,
S. Magoshi, Y. Tanaka, S. Shirai and
H. Tanaka
Selete, Japan
17A-2-3 14:20
Development Progress of LPP EUV
Lithography Light Source
D. Brandt 1, N. Farrar 1 and J. Bonafede 2
1 Cymer, USA and 2 Cymer Japan,
Japan

17B-2-2 14:00
Structure and Electronic Properties of Epitaxial
Graphene grown on SiC Studied by Surface
Electron Microscopy (Invited)
H. Hibino, H. Kageshima, and M. Nagase,NTT, Japan

17A-2-4 14:40
Actinic Phase Defect Detection for EUV Mask
with Absorber Patterns
T. Terasawa 1, T. Yamane 1, T. Tanaka 1,
O. Suga 1 and T. Tomie 2
1 Selete and 2 AIST, Japan

17B-2-4 14:50
Fabrication of Large-Area Graphene using
Liquid Gallium and the Effect of Hydrogen
Y. Miyazawa 2, R. Ueki 1,2, M. Sasaki 2,
T. Ichihashi 3 and J. Fujita 1,2
1 PRESTO-JST, 2 Univ. of Tsukuba and
3 NEC, Japan

17A-2-5 15:00
Systematic Measurement Uncertainty
CD-SEM for 2x Node
H. Abe, T. Ikeda and Y. Yamazaki
Toshiba, Japan
17A-2: 15:20-15:35, Author's Interview

17B-2-3 14:30
Unique Synthesis of High-Quality Graphene
Films on Carbon Doped Metal Surfaces
J.-H. Gao, M.S. Xu and D. Fujita
NIMS, Japanof

Room D1 and Room D2 (2F)
Coffee Break-1-

17C-2-3 14:20
Numerical Simulation on Resist Filling Process
by Capillary Force in UV- Nanoimprint
Lithography
Y. Nagaoka 1,3, H. Hiroshima 2,3 and Y. Hirai
1,3
1 Osaka Pref. Univ., 2 AIST and
3 CREST-JST, Japan
17C-2-4 14:40
Nanoimprint using Side Chain Crystalline
Polymer
M. Okada 1,3,4, S. Nakano 2, S. Kawahara 2
and S. Matsui 1,3
1 Univ. of Hyogo, 2 NITTA, 3 CREST-JST
and 4 JSPS, Japan
17C-2-5 15:00
Pressure-Free
Solvent-Assisted
Imprint
Lithography
G.L. Lai 1, M.H. Hon 1 and I.C. Leu 2
1 Natl. Cheng Kung Univ. and
2 Natl. Univ. of Tainan, Taiwan

Room A (3F)
17A-3: Bio MEMS Lab-on-a-chip
Chairpersons:T. Ichiki (Univ. of Tokyo)
Y. Takamura (JAIST)
17A-3-1 15:40
Controlling Cellular Microenvironments with
Microfluidics and Nanostructures (Invited)
N.L. Jeon
Soul National Univ., Korea
Change to
13:20-13:50, November 18 at Room C.
17A-3-2 16:10
Electrokinetic Analysis of Change in Hl60
Cells'
Surfaceduring
Granulocytic
Differentiation
by
On-Chip
Cell
Electrophoresis
R. Matsuhashi, T. Akagi, K. Kawabata,C. Iwata, M.R. Kano, K. Miyazono andT. Ichiki
Univ. of Tokyo, Japan
17A-3-3 16:30
High Density Cell Culture using Micro 3D
Scaffold with Capillary Bundle Structure
T. Omukai 1, A. Kinoshita 2, F. Komada 2 andY. Utsumi 1
1 Univ. of Hyogo and 2 Himeji Dokkyo Univ.,Japan

Room B (3F)
17B-3: Symposium B: Graphene Growth &Characterization I

Room C (3F)
17C-3: Nanoimprint, Nanoprint and Rising
Lithography I

Chairpersons:
H. Hibino (NTT)J. Fujita (Univ. of Tsukuba)
17B-3-1 15:30
Electrical
Properties
ofCVD-grown
Multi-layer Graphene for Carbon-basedInterconnects (Invited)
M. Nihei 1,2,5, M. Sato 1,2,5, D. Kondo 1,2,5,
S. Sato 1,2,5, S. Ogawa 3,5 E. Ikenaga 4,5, and
Y. Takakuwa 3,5
1 Fujitsu Labs., 2 Fujitsu, 3 Tohoku Univ., 4
JASRI and 5 CREST-JST, Japan
17B-3-2 16:00
Heteroepitaxial
Graphene on
Silicon:Process&Device Technology for Ultra-highFrequency Devices (Invited)
T. Otsuji 1,4, T. Suemitsu 1,4, H. Fukidome
1,4, M. Suemitsu 1,4, V. Ryzhii 2,4 and
E. Sano 3,4
1 Tohoku Univ., 2 Univ. of Aizu and3 Hokkaido Univ. and 4 CREST-JST,
Japan
17B-3-3 16:30
Large-Scale, Uniform and Transferrable
Graphene Films synthesized by Chemical
Vapor Deposition
M. Xu, D. Fujita, J. Gao, E. Watanabe and
N. Hanagata
NIMS, Japan

Chairpersons:
H. Hiroshima (AIST)
H. Schift (PSI)
17C-3-1 15:40
Memristors and Memristor-Based Circuits
Enabled by Nanoimprint Lithography (Invited)
Q. XiaHP Labs., USA

17A-3-4 16:50
Fabrication of Hydrophilic PDMS Containing
Silwet L-77 Microporous Structure and its
Application to Portable Microfluidic Pump
W. Yang 1, Y.G. Nam 1, B.-K. Lee 2,
T.H. Kwon 2 and D.S. Kim 1
1 Chung-Ang Univ. and 2 POSTECH, Korea

17B-3-4 16:50
Self-Assembly of Two-Dimensional Graphene
Oxide on Silicon Substrates
R. Ishikawa, M. Bando, Y. Morimoto,
S.Y. Park and A. Sandhu
Tokyo Inst. of Technol., Japan

17A-3-5 17:10
The Elemental Analysis by Liquid ElectrodePlasma using a Quartz Chip
A. Kitano 1, T. Yamamoto 2 and Y. Takamura
1
1 JAIST and 2 Micro Emission, Japan

17B-2, 3: 17:10-17:25, Author's Interview

17A-3-6 17:30
Label-Free Nanosensor Based on a Multilayer
Interference Coupled with Localized Surface
Plasmon Resonance
H.M. Hiep, H. Yoshikawa and E. Tamiya
Osaka Univ., Japan
17A-3: 17:50-18:05, Author's Interview
Hokkaido Univ., RCIQE Lab. Tour
Date and Time: Nov. 17 (Tuesday) 18:20 - 20:00
Capacity: 30 persons
Reservation: on-site registration at registration desk
Round-trip by a pick-up bus-2-

17C-3-2 16:10
Characterization of Anti-Sticking Layers for
UV-Nil Molds with Scanning Probe
Microscopy
M. Kurihara 1,2, T. Shimomura 1, T. Nagai 1,
K. Yoshida 1, N. Yamada 1, T. Tomita 1,
M. Hoga 1, N. Hayashi 1, H. Ohtani 2 andM. Fujihira 2
1 Dai Nippon Printing and 2 Tokyo Inst. ofTechnol., Japan
17C-3-3 16:30
Growth Behavior of an Adsorbed Monolayer
fromaBenzophenone-Containing
Trimethoxysilane Derivative on a Fused Silica
Surface by Chemical Vapor Surface
Modification
S. Kubo 1,2 and M. Nakagawa 1,2
1 Tohoku Univ. and 2 CREST-JST, Japan·
17C-3-4 16:50
Fabrication of a Large Master Mold using
Self-Assembled Particles for the Moth-Eye
Antireflection Structures
T. Nakanishi, T. Hiraoka, A. Fujimoto,
T. Okino, S. Sugimura and K. Asakawa
Toshiba, Japan
17C-3-5 17:10
Development of Micro-Fabrication Technologyof Thermal-Responsive Polymer using
Photolithography and Nanoimprint Method
Y. Yokoyama 1,2, S. Yamamura 3, S. Fujiki 1,
Y. Takamura 2 and E. Tamiya 4
1 Toyama Industrial Technol. Ctr., 2 JAIST,
3 AIST and 4 Osaka Univ., Japan
17C-2, 3: 17:30-17:45, Author's Interview

Wednesday, November 18, 2009
Room A (3F)
18A-4: Symposium A: Computational
Lithography I
Chairpersons:S. Nagahara (NEC Electronics)
A. Neureuther (Univ. of CA, Berkeley)
18A-4-1 9:00
Dr. Hiroshi Ito Tribute
S. Tagawa (Invited)
Osaka Univ., Japan

18A-4-2 9:20
Lowering of Lithography k1 by Computational
Scaling Technology (Invited)
K. Lai 1, T. Farrell 1 and D. Gill 2
1 IBM Semiconductor and 2 IBM Res.,USA
18A-4-3 9:50
Computational
Lithography
anditsApplications Implemented through Level Set
Methods
based
InverseLithography
Technology (ILT) Framework (Invited)
L. Pang, D. Peng, P. Hu, D. Chen, T. Cecil,
G. Xiao, V. Tolani, T. Dam, K.-H. Baik and
B. Gleason
Luminescent Technol., USA
18A-4-4 10:20
The Fundamental Study of the Mask 3D Effecton the Advanced Phase Shifting Masks for the
Next Generation Lithography
T. Yuito, A. Misaka and M. Sasago
Panasonic, Japan

Room B (3F)
18B-4: Nanomaterials I

Room C (3F)
18C-4: Microsystem I

Chairpersons:T. Ishida (AIST)
T. Miyazawa (Univ. of Tokyo)

Chairpersons:K. Suzuki (Ritsumeikan Univ.)
D.F. Wang (Ibaraki Univ.)

18B-4-1 9:00
Semiconductor Quantum Dots in Metallic
Nanostructures (Invited)
I. Suemune 1,2, Y. Idutsu 1,2, M. Takada 1,
D. Kato 1, S. Ida 1, J.-H. Huh 1, H. Sasakura
1,2 and H. Kumano 1,2
1 Hokkaido Univ. and CREST-JST, Japan
18B-4-2 9:30
GrowthandCharacterizationofTelecommunication-Wavelength
Quantum
Dots using Bi as a Surfactant
H. Okamoto 1, T. Tawara 2, H. Gotoh 2,
H. Kamada 2 and T. Sogawa 2
1 Hirosaki Univ. and 2 NTT, Japan
18B-4-3 9:50
The Relationship Between Length andConductance in Gold Wires of SingleAtom-Width
S. Kodama, H. Masuda and T. Kizuka
Univ. of Tsukuba, Japan

18C-4-1 9:00
SU-8 Cantilevers with IIntegrated Wheatstone
Bridge as a Strain Sensor
J.-H. Ahn and D.-W. Lee
Chonnam Natl. Univ., Korea

18B-4-4 10:10
Tungsten Oxide Nanostructures: Synthesis,
Characterization and Modification
S. Jeon and K. Yong
POSTECH, Korea

18C-4-4 10:00
Fabricating MEMS Probe Card Compatible
with CMOS-MEMS Process
K.-Y. Lee, J.-T. Huang, H.-J. Hsu, R.-G. Wu
and T.-C. TsaiNatl. Taipei Univ. of Technol., Taiwan
18C-4-5 10:20
Two Steps Deformation Mechanism of aCarling Carbon Micro Tube
K. Usuda, T. Hoshino and K. Morishima
Tokyo Univ. of Agriculture and Technol.,Japan

18C-4-2 9:20
MEMS-Based
Event-Driven
On/offThermometer for Digital Sensing with
Ultra-Low Power Consumption
Y. Zhang, J. Lu, T. Itoh and R. Maeda
AIST, Japan
18C-4-3 9:40
Micro Three-Axial Capacitive Touch Force
Sensor using MOSBE II
C.-T. Chuang, C.-K. Chan and R. Chen
Natl. Tsing Hua Univ., Taiwan

Room D1 and Room D2 (2F)
Coffee BreakRoom A (3F)
18A-5: Symposium A: Computational
Lithography II
Chairpersons:T. Sato (Toshiba)
K. Lai (IBM)
18A-5-1 11:00
Opticallithography
extensionComputational Lithography (Invited)
T. Takigawa
Brion Technol., Japanby

18A-5-2 11:30
A Study of Source & Mask Optimization for
Future Optical Lithography (Invited)
T. Matsuyama, T. Nakashima, R. Matsui
Nikon, Japan

18A-5-3 12:00
Full-Chip Layout Optimization for Process
Margin Enhancement using Model-Based
Hot-Spot Fixing System
S. Kobayashi 1, S. Kyoh 1, T. Kotani 1,
Y. Takekawa 1, S. Inoue 1 and K. Nakamae 2
1 Toshiba and 2 Osaka Univ., Japan

Room B (3F)
18B-5: Nanomaterials II

Room C (3F)
18C-5: Microsystem II

Chairpersons:T. Ishida (AIST)
T. Miyazawa (Univ. of Tokyo)

Chairpersons:T. Ikehara (AIST),
H. Takao (Toyohashi Univ. of Technol.)

18B-5-1 11:00
Design of Photo-controllable
Materials (Invited)
Y. Einaga
Keio Univ., Japan

Magnetic

18B-5-2 11:30
Electron-Phonon Interaction in Nitrogen
Doped ZnO Nanoparticles
K. Senthilkumar 1, H. Okamoto 1,
M .Tokunaga 1, O. Senthilkumar 1, B. Urban
2, A. Neogi 2 and Y. Fujita 1
1 Shimane Univ. and 2 Univ. of North Texas,
USA
18B-5-3 11:50
Ferromagnetic Ni Doped ZnO Nanocrystalline
Thin Films Reveals Magnetic Anisotropy
M. Subramanian, F.-Y. Ran, M. Tanemura,T. Hihara, T. Soga and T. Jimbo
Nagoya Inst. of Technol., Japan-3-

18C-5-1 11:00
Fabrication of Disk-Type MEMS Resonatorswith Dry-Etched 150 nm-Wide Capacitive Gap
S. Murakami 1, M. Konno 1, T. Ikehara 1,
R. Maeda 1 and T. Mihara 2
1 AIST and 2 Olympus, Japan
18C-5-2 11:20
Characterizationon
Four-Points-Pinned
Ring-Shaped Silicon MEMS Resonator
T. Oka, H. Tanigawa and K. Suzuki
Ritsumeikan Univ., Japan

18C-5-3 11:40
A Vertical Mirror Monolithically fabricated ona Rotary Comb-Drive Actuator for Variable
Optical Attenuation
I.C.-M. Chang 1, R. Chen 1 and M.T.-K. Hou 2
1 Natl. Tsing Hua Univ. and 2 Natl. United
Univ., Taiwan

18A-5-4 12:20
OPC on a Single Desktop: A GPU-Based OPC
and OPV Tool for Fabs and Designers
I. Torunoglu and A. Karakas
Gauda, U.S.A.

18B-6: Nanomaterials III

18C-5-4 12:00
Fabrication of Variable-Reflection Photonic
Crystal MEMS Filters using Subwavelength-Grating-Embedded Substrates
Y. Kanamori, S. Haida and K. Hane
Tohoku Univ., Japan
18C-5-5 12:20
Development of Roll Micromold System(RMS) via Deep X-Ray Lithography and Metal
Electroforming Processes
B.-K. Lee and T.H. Kwon
POSTECH, Korea
18C-4, 5: 12:40-12:55, Author's Interview
Lunch
17A-3-1 13:20
Controlling Cellular Microenvironments with
Microfluidics and Nanostructures (Invited)
N.L. Jeon
Soul National Univ., Korea
18C-6: Nano Tool

Chairpersons:T. Yoshinobu (Tohoku Univ.)
Y. Tajima (Riken)

Chairpersons:S. Akita (Osaka Pref. Univ.)
M. Nagase (NTT)

18B-5-4 12:10
Superhydrophobic ZnO Surface:Chemical
Modification and Effects of UV Irradiation
G. Kwak, M. Seol, Y. Tak and K. Yong
POSTECH, Korea
18B-5-5 12:30
Effects of Crystal Structure and Nitrogen
Doping on Photoelectric Properties of TiO2
Films grown by Atomic Layer Deposition
W.J. Lee and M.H. Hon
Natl. Cheng Kung Univ., Taiwan

Lunch

18A-6: Symposium
Lithography III

A:

Computational

Chairpersons:T. Chijimatsu (Fujitsu)
T. Takigawa (Brion Technol.)
18A-6-1 14:00
Modeling of Mask and Wafer Side Scattering
EffectsinAdvanced
Opticaland
EUV-Lithography (Invited)
A. Erdmann, F. Shao, P. Evanschitzky,
T. Fubner and Z. Rahimi
Fraunhofer, Germany
18A-6-2 14:30
Use of Physics-Based Resist Models to Predict
Real-World Lithographic Effects (Invited)
M.D. Smith, S. Robertson, J. Biafore,
T. Graves, and S. Kapasi
KLA-Tencor, USA

18B-6-1 13:50
GrowthandCharacterization
InGaN/GaN-Based Nano-Parasols
T. Kouno1,2, K. Kishino1,2 H. Hata 1 andA. Kikuchi 1,2
1 Sophia Univ. and 3 CREST-JST, Japan

18A-6-3 15:00
The Role of Physical Lithography Simulationin Manufacturing Flows (Invited)
W. Demmerle
Synopsys, Germany
18A-4, 5, 6: 15:30-15:45,
Author's Interview

18B-6-3 14:30
Synthesis of Highly Vertically Aligned Carbon
Nanotube Forest on Fe/Al Catalyzed Substratefor Yarning Application
B.H. Choi, H.N. Yoo, Y.B. Kim and J.H. Lee
Korea Inst. of Industrial Technol., Korea
18B-6-4 14:50
Raman Scattering of Single-Walled Carbon
Nanotubes in Early Growth Stages using
Laser-Irradiated Chemical Vapor Deposition
T. Tsuji, K. Inoue, Y. Ohno, K. Maehashi and
K. Matsumoto
Osaka Univ., Japanof

18B-6-2 14:10
Structural Characterizations of Ferromagnetic
MnAs Nanoclusters on Si (111) Substrate by
Selective-Area MOVPE
K. Morita 1, S. Hara 1,2, S. Ito 1 and T. Fukui 1
1 Hokkaido Univ. and 2 PRESTO-JST, Japan

18B-6-5 15:10
First-Principles Simulation on Thickness
Dependence of Piezoresistance Effect in
Silicon Nanosheets
K. Nakamura, T. Toriyama and S. Sugiyama
Ritsumeikan Univ., Japan
18B-4, 5, 6: 15:30-15:45,
Author's Interview

18C-6-1 13:50
Sorting and Functional Analysis of Single
Biomolecules by Micro- and Nano-Devices(Invited)
T. Funatsu
Univ. of Tokyo, Japan
18C-6-2 14:20
Alignment of Size-Homogeneous Ge Dots on Si(001) Substrate with Two-Dimension Hole Array
H.M. Chen 1, Y.P. Lai 1, G.L. Luo 2 andC.H. Kuan 1
1 Natl. Taiwan Univ. and 2 Natl. Nano Device
Labs., Taiwan
18C-6-3 14:40
Electrostatically Actuated Chemical Scanning
Force Microscopy Probe with Tunable Spring
C.-Y. Shao, Y. Kawai, M. Esashi and T. Ono
Tohoku Univ., Japan
18C-6-4 15:00
Fabrication of Low-Voltage SWCNT-Thin
Film Transistor using Ink-Jet Printing
H. Okimoto 1, T. Takenobu 1, K. Yanagi 2,3,4,
Y. Miyata 2,5, H. Kataura 2,3, T. Asano 6 andY. Iwasa 1
1 Tohoku Univ., 2 AIST, 3 CREST-JST, 4
Tokyo Metropolitan Univ., 5 Nagoya Univ. and
6 Brother Industries, Japan
18C-6-5 15:20
Aligned Single-Walled Carbon Nanotube
Arrays on Patterned SiO2/Si Substrates
K. Maehashi, S. Iwasaki, Y. Ohno,
T. Kishimoto, K. Inoue and K. Matsumoto
Osaka Univ., Japan
18C-6-6 15:40
Mechanical Resonance of Cantilevered Carbon
Nanotubes in Liquid
S. Sawano 1, T. Arie 1,2 and S. Akita 1,2
1 Osaka Pref. Univ. and 2 CREST-JST, Japan
18C-6: 15:45-16:00, Author's Interview

Room D1 and D2 (2F)

Poster Session I (16:00-18:00)
DUV, EUV Lithography and Metrology
18D-7-1
Structural Optimization of Single Grating
Diffraction for Use in EUV Interferometric
Lithography
M. Saïb 1, C. Constancias 2, P. Michallon 2,
B. Dalzotto 2 and M. Besacier 1
1 CNRS-LTM Grenoble and 2 CEA Grenoble,
France18D-7-2
Current Research Status of EUV Source in
China
C. Zhang, P. Lu, Y. Zhao and Q. Wang
Harbin Inst. of Technol., China-4-

18D-7-3
Holistic Optimization for Lithography at Ion
Implant Layers
T. Ojima, M. Asano, M. Takahashi, Y. Seino
and S. Mimotogi
Toshiba, Japan

18D-7-4
Development of the Extreme Ultraviolet
Interference Lithography System
N. Sakagami, Y. Fukushima, Y. Kamaji,
T. Iguchi, Y. Yamaguchi, M. Tada, T. Harada,
T. Watanabe and H. Kinoshita
Univ. of Hyogo, Japan
18D-7-7
A GPU-Based Source-Mask Optimization
SolutionI. Torunoglu and A. Karakas
Gauda, USA
18D-7-10
A Study of Flare Variation in Extreme
Ultraviolet Lithography for Sub-22nm Lineand Space Pattern
J. Lee, G. Song and O. Kim
POSTECH, Korea
Electron- and Ion-Beam Lithography
18D-7-12
Vibration Isolation of a Full Electron Beam
Projection Lithography System
F.C. Wang, M.F. Hong and J.Y. Yen
Natl. Taiwan Univ., Taiwan
18D-7-15
High Resolution Electron Beam Direct Write
on ZEP520 at 5 KeV
F.-M. Wang 1, S. Ono 2, H.-H. Su 1, K.-Y.
Tsai 1 and C.-H. Kuan 1
1 Natl. Taiwan Univ., Taiwan and 2 Elionix,Japan
18D-7-18
Ion Track Nanolithography for Nanotemplate
Fabrication using Thick Cross-Linked PMMA
950 Photoresist
E. Koukharenko 1, J. Kuleshova 1, S. Leong 1,
M.J. Tudor 1, D. O'Connell 2, J. Pike 2, S.P.
Beeby 1, I. Nandhakumar 1 and N.M. White 1
1 Univ. of Southampton, UK and 2 Tyndall
Natl. Inst., Ireland
Resist Materials and Processing
18D-7-19
Relationship between Normalized Image Log
Slope (NILS) and Chemical Gradient in
Chemically Amplified Extreme Ultraviolet
Resists –Effect of Secondary Electron
Migration
T. Kozawa 1,2 and S. Tagawa 1,2
1 Osaka Univ. and 2 CREST-JST, Japan
18D-7-22
Sensitivity
EnhancedElectron-Beam
Lithography on HSQ
H. Ohki and Y. Ono
JEOL, Japan
18D-7-25
Studies of the Acid Generator for RLS
Tradeoff Improvement in EUV Photoresists
Y. Utsumi 1, Y. Komuro 1, M. Irie 1,
K. Matsuzawa 1, H. Hada 1, T. Haga 1, andS. Ogawa 2
1 Tokyo Ohka Kogyo and 2 Iwate Univ., Japan
18D-7-145L
Short-Lived Intermediates of FluorinatedBenzene Derivatives Generated upon Exposure
to Ionizing Radiation
S. Higashino 1, K.Okamoto 2,3, A. Saeki 1,3,
T. Kozawa 1.3, and S. Tagawa 1,3
1 Osaka Univ., 2 Hokkaido Univ. and
3 CREST-JST, Japan
Nanodevices
18D-7-27
Applications of Monolayer of Microspheres on
Solar Cells and LEDs
C.-H. Chan, C.-H. Hou, C.-C. Chen,
G.-T. Chen and J.-I. Chyi
Natl. Central Univ., Taiwan

18D-7-5 Withdrawn
Resist Evaluation using EUV Interference
Lithography
Y. Fukushima, N. Sakagami, T. Kimura,Y. Kamaji, T. Iguchi, Y. Yamaguchi, M. Tada,
T. Harada, T. Watanabe and H. Kinoshita
Univ. of Hyogo, Japan
18D-7-8
Critical Dimension Measurement of an EUV
Mask using by a Coherent EUV Scattering
Microscope at NewSUBARU
T. Harada 1,2, J. Kishimoto 1,2, T. Watanabe
1,2 and H. Kinoshita 1,2
1 Univ. of Hyogo and 2 CREST-JST, Japan
18D-7-11
Refilled Phase Shift Mask for Minimizing
Shadowing Effect
H.-D. Shin, C.Y. Jeong, S. Lee, T.G. Kim and
J. AhnHanyang Univ., Korea
18D-7-13
Manufacturability Analysis of a MEMSBased Electron-Optical System Design for
Direct-Write Lithography
S.-Y. Chen 1, S.-C. Chen 1, H.-H. Chen 1,
T.-H. Pei 1, K.-Y. Tsai 1 and H.-H. Pan 2
1 Natl. Taiwan Univ. and 2 ITRI, Taiwan
18D-7-16
Design and Fabrication of Multi-Aperture
Plate for Multi Ion Beam Patterning System
Y. Choi, T.-G. Kim, J. Han, B.-K. Min, Y.-J.
Kim and S.J. Lee
Yonsei Univ., Korea

18D-7-6
Imaging Performance Advancement of an
Extreme Ultraviolet Microscope
K. Takase, Y. Kamaji, N. Sakagami, T. Iguchi,
M. Tada, Y. Yamaguchi, Y. Fukushima,
T. Harada, T. Watanabe and H. Kinoshita
Univ. of Hyogo, Japan
18D-7-9
Effects of Fresnel Zone Plate Fabrication Errors
on Focusing Performances
T.-H. Pei, K.-Y. Tsai and J.-H. Li
Natl. Taiwan Univ., Taiwan
18D-7-142L
Skewness and Kurtosis Risks of Quality
Control in Overlay Inspection
T. Sato, K. Kasa, T. Ikeda, M. Asano and
Y. SatoToshiba, Japan
18D-7-14
Low Energy Microcolumn Design for Large
Field View Inspection
D.-W. Kim, Y.C. Kim, S.-J. Ahn, T.-S. Oh and
H.-S. Kim
Sun Moon Univ., Korea
18D-7-17
Maskless Formation of Patterned Gallium
Nitride
Layer
on
Low-Energy
Ga-Ion-Implanted Silicon Nitride Surface byMetal-Organic Chemical Vapor Deposition
K. Ishiizumi 1, J. Kikkawa 1, Y. Nakamura 1,
A. Sakai 1 and J. Yanagisawa 2
1 Osaka Univ. and 2 Univ. of Shiga Pref., Japan

18D-7-143L
Analysis of a Resist Surface Deformation by
Electron Beam Irradiation
Y. Akiba 1 and M. Kotera 1,2
1 Osaka Inst. of Technol. and 2 Nanomaterials
Microdevices Res., Japan

18D-7-20
Development of New Negative-Tone
Molecular Resists based on Alkylphenyl
Calixarene for EUVL
H. Hayashi 1, M. Echigo 1, H. Oizumi 2 and
T. Itani 2
1 Mitsubishi Gas Chemical Company and 2
Selete, Japan
18D-7-23
Studyof
Acid-Leaving
Groups of
Positive-Working Molecular Resists for High
Resolution
A. Yamada, S. Hattori, S. Saito and K. Asakawa
Toshiba, Japan
18D-7-26
Photo-Acid Generator Sans Chromophore for
EUV Resists
K.S. Mayya 1, Y. Kang 2, T. Yasue 1,
S.-H. Oh 1, S.-W. Choi 1 and C.-H. Park 1
1 Samsung Electronics and 2 Kyunghee Univ.,
Korea

18D-7-24
Molecular Resists based on Fullerene Derivativ
K. Tanaka 1, K. Kawakami 2 and N. Harada 2
1 Mitsubishi Chemical and 2 Mitsubishi
Chemical Group Sci. and Technol. Res. , Japan

18D-7-28
Preparation of Multilayer Thin Films forApplication to Dye-Sensitized Solar Cells
H. Chang, Y.-L. Chen and M.-J. Kao
Natl. Taipei Univ. of Technol., Taiwan

18D-7-29
Air-Stable Hybrid Inverted Solar Cells using
Titanium Dioxide and Polymer:Fullerene
W.-H. Baek, T.-S. Yoon, H.H. Lee andY.-S. Kim
Myongji Univ. Korea-5-

18D-7-21
Development of Positive-Tone Molecular EUVResist based on “Noria” Derivatives
H. Oizumi 1, T. Itani 1, H. Kudo 2, Y. Suyama
2 and T. Nishikubo 2
1 Selete and 2 Kanagawa Univ., Japan

18D-7-144L
Effect of Direct Excitation of Acid
Generatorsupon
Exposure
toExtremeUltraviolet Radiation
H. Yamamoto 1, T. Kozawa 1, S. Tagawa 1,
T. Hirayama 2, T. Iwai 2 and K. Sato 2
1 Osaka Univ. and 2 Tokyo Ohka Kogyo, Japan

18D-7-30
Optoelectronic Characterization of ZnO andZnO-Carbon
Nanotubes
Photo-Anode
Electrodes in Dye-Sensitized Solar Cells
Y.R. Wu, M. Chen and H.S. Koo
Minghsin Univ. of Sci. and Technol., Taiwan
18D-7-33
Enhanced Electroluminescence of ZnO/GaN
LED's by Applying ZnO/ZnMgO Multi
Quantum Wells and Photonic Crystal Structure
Fabricated by the Nanoimprint Lithography
J.-H. Park, I.-S. Kim, J.-C. Park, M.W. Oh andB.-T. Lee
Chonnam Natl. Univ., Korea

18D-7-31
Alloyed Quantum Dots with Tunable Emission
Wavelength and Their Use as Light Emitting
DiodesY.-C. Pu 1,2 and Y.-J. Hsu 2
1 ITRI and 2 Natl. Chiao Tung Univ., Taiwan
18D-7-34
Characteristics
of
All
Solid
State
Electrochromic Mirror with LPWONElectrolyte
S.H. Jee, N. Kakati and Y.S. Yoon
Yonsei Univ., Korea

18D-7-36
Drastic Enhancement of Luminescence andSingle Photon Emission from InAs QDs Pillar
Structures Embedded in Niobium Layer
Y. Idutsu 1,2, S. Odashima 1,2, H. Nakajima 1,
D. Kato 1, S. Ida 1, H. Sasakura 1,2,
H. Kumano 1,2 and I. Suemune 1,2
1 Hokkaido Univ. and 2 CREST-JST, Japan
18D-7-39
Competition between Surface Plasmon
Polaritons and Guided Resonance in SiN
Photonic Crystal Slabs Coated with Various
Silver Thin Films
J.H. Shyu, N. Ou, J.H. Chien and J.C. Wu
Natl. Changhua Univ. of Education, Taiwan
18D-7-42
Nonvolatile Polymer Memory Device basedon
Glycerol-Modified
Poly(3,4Ethylenedioxythiophene):Poly(Styrene
Sulfonate) (G-PEDOT:PSS)
B. Park and O. Kim
POSTECH, Korea
18D-7-45
Phosphorus Ion Doping to Silicon Nanocrystal
Assembly by Ion Implantation
K. Hirata 1, M. Gibo 1, K. Yoshida 3,
M. Inada 2, I. Umezu 1, S. Nagamachi 3,
T. Saitoh 2 and A. Sugimura 1
1 Konan Univ., 2 Kansai Univ. and 3 Ion
Technol. Ctr., Japan
Nanofabrication
18D-7-48
Fabrication of Hybrid-Polymer SERS Sensor
using Laser Interference and Ultraviolet
Nanoimprint Lithography
T.-L. Chang 1, D.-Z. Lin 1, C.-H. Huang 1,
K.-Y. Cheng 1, S.-W. Luo 1,2, J.-Y. Chu 1,
C.-C. Su 1, T.-H. Chou 1, J.-H. Tsai 1 andC.-W. Hsieh 1
1 ITRI and 2 Natl. Tsing Hua Univ., Taiwan
18D-7-51
Fabrication of Microcontact Offset Plate byusing Fountain-Pen Nanolithography
M. Onoue and H. Ushijima
AIST, Japan

18D-7-37
Low-Loss
Photonic
CrystalDefectWaveguides and Integrated Cavities in
InP/InGaAsP for TM-Polarized Light
P. Ma, P. Kaspar, Y. Fedoryshyn and H. Jäckel
ETH Zürich, Switzerland

18D-7-54
Mechanical Characteristics of Nanosprings
Fabricated by Focused-Ion-Beam Chemical
Vapor Deposition using Ferrocene Source Gas
Y. Nakai 1, Y. Kang 1, M. Okada 1,2,
Y. Haruyama 1, K. Kanda 1 and S. Matsui 1
1 Univ. of Hyogo and 2 JSPS, Japan
18D-7-57
Effect of Hydrogen Termination on Surface
Roughness Variation of Si(110) by Reflow
Oxidation during High Temperature Ar
Annealing
K. Araki 1,2, H. Isogai 2, R. Takeda 2,
K. Izunome 2, Y. Matsushita 2 and X. Zhao 1
1 Tokyo Univ. of Sci. and 2 Covalent
Materials, Japan

18D-7-40
Integration of DSSC with Thermoelectric
ModulestoConstitutea
Novel
Photo-Thermoelectric Generator
H. Chang, M.-J. Kao, C.-H. Peng and
Z.-R. Yu
Natl. Taipei Univ. of Technol., Taiwan
18D-7-43
Poly(3-Hexylthiophene)/Fullerene
Organic
Thin-Film Transistors: Investigation for an
Application in Nanodevice Memory
K.A. Mohamad, K. Uesugi and H. Fukuda
Muroran Inst. of Technol., Japan

18D-7-32
An
n-ZnO/p-Si
CrossedNanowire
Light-Emitting DiodeK. Kim, J. Koo, J. Kang, M. Lee, C. Yoon,
K. Cho and S. Kim
Korea Univ., Korea
18D-7-35
GaN Light-Emitting Diodes with Various
Nano-Scale Photonic Crystal Structures
Y.C. Shin 1, D.H. Kim 1, W.H. Lee 1, B.G. Lee
1, D.J. Chae 1, J.W. Yang 1, J.-M. Park 2,
C. Kristen 2, K.-M. Ho 2, H.-Y. Ryu 3,
J.H. Baek 4, T. Jung 4 and T.G. Kim 1
1 Korea Univ., Korea, 2 Iowa State Univ.,
USA, 3 Inha Univ., Korea and 4 Korean
Photonics Technol. Inst., Korea
18D-7-38
Resonant Coupling between Surface Plasmons
and InGaN/GaN Multiple Quantum Well by
Two-Dimensional Silver Dot-Array
C.-C. Lan 1, C.-H. Lu 1, Y.-L. Lai 2 andC.-P. Liu 1
1 Natl. Cheng Kung Univ. and 2 Genesis
Photonics, Taiwan
18D-7-41
PZT Thin Film Capacitors Transferred onto
Flexible Substrates
S.J. Kim, B.S. Kim, Y. Oh and H.-S. Lee
Samsung Electro-Mechanics, Korea
18D-7-44
Performance Enhancement of P3HT Based
TFTs by using MWCNT Source and Drain
C.H. Chang 1 and C.H. Chien 1,2
1Natl. Chiao Tung Univ. and 2 Natl. Nano
Device Labs., Taiwan

18D-7-46
DFT and MD Simulation of the Hydrogen
Atom on Carbon Materials
T. Iyama and H. Tachikawa
Hokkaido Univ., Japan

18D-7-47
Noise Redundancy of a Single-Electron
Depressing-Synapse Network
D. Kurotaki and T. Oya
Yokohama Natl. Univ., Japan

18D-7-49
Synthesis and Magnetic Property ofMultiferroic BiMnO3 Nanoparticles in the
Pores of Mesoporous Silica
T. Tajiri 1, M. Harazono 2, H. Deguchi 2,
M. Mito 2, A. Kohno 1 and S. Kohiki 2
1 Fukuoka Univ. and 2 Kyushu Inst. ofTechnol., Japan

18D-7-50
Dry Etching of Si using Ar/F2 Plasma
A. Matsutani 1, H. Ohtsuki 2 and F. Koyama 1
1 Tokyo Inst. of Technol. and 2 Samco Inter
Natl., Japan

18D-7-52
Structural Changes in the DLC Films
Fabricated using Ga Focused Ion Beam
Assisted Deposition by Heat Treatment
K. Kanda 1, M. Okada 1, Y. Kang 1, M. Niibe
1, T. Suzuki 2 and S. Matsui 1
1 Univ. of Hyogo and 2 Nagaoka Univ. ofTechnol., Japan
18D-7-55
Fabrication of Single Electron Transistor using
Superconducting Nb Nanogap Electrodes
T. Nishino 1,2, R. Negishi 1, H. Ozawa 3 andK. Ishibashi 1
1 RIKEN, 2 Chiba Univ. and 3 Kyushu Univ.,
Japan
18D-7-58
Synthesis and Cathodoluminescence of AIN
Nanocrystallites and Nanowires on Si
Substrates
X. Zhao 1, R. Kasahara 1, T. Hori 1, F. Jing 1,
S. Harako 1 and S. Komuro 2
1 Tokyo Univ. of Sci. and 2 Toyo Univ.,
Japan

18D-7-53
Shear Induced Unidirectional Patterning of
Polyaromatics and Double-Stranded Polymers
S.-L. Lee and C.-H. Chen
Natl. Taiwan Univ., Taiwan-6-

18D-7-56
Suppression of Back-Scattering Effect inElectron-Beam Lithography and Precise
Control of Nb Etching Processes
J.-H. Huh 1, Y. Hayashi 1 and I. Suemune 1,2
1 Hokkaido Univ. and 2 CREST-JST, Japan
18D-7-59
Polyimide Micro/Nano-Structures Patterning
basedonContact-TransferredandMask-Embedded (CMEL) Lithography
Y.-C. Lee and C.-Y. Chiu
Natl. Cheng Kung Univ., Taiwan

18D-7-60
Photoemission Spectroscopic Analysis with
Synchrotron Radiation of Direct Nitridation ofAl(111) by Supersonic N2 Molecular BeamY. Teraoka, J. Harries and A. Yoshigoe
Japan Atomic Energy, Japan

18D-7-63
Fabrication of Silver Pore Arrays and Their
Superhydrophobicity Properties
J.-H. Lee 1,4, M.-H. Hon 1, Y.-W. Chung 2
and I.-C. Leu 3
1 Natl. Cheng Kung Univ., 2 ITRI, 3 Natl.
Univ. of Tainan and 4 Min-Hwei College of
Health Care Management, Taiwan
18D-7-66
Impact of Surface Pre-Treatment on Metal
Migration induced by Remote H2-Plasma
Treatment
K. Makihara, A. Kawanami, M. Ikeda,
S. Higashi and S. Miyazaki
Hiroshima Univ., Japan
Nanomaterials
18D-7-68
Refractive Index Regulation of Gold
Nanocrystal Superlattices by Varying the
Nanocrystal Size
S. Sato, T. Ito and K. Kimura
Univ. of Hyogo, Japan
18D-7-71
Kinetic Studies on the Synthesis of
Vertically-Aligned CuO Nanowires by
Thermal Oxidation
S.L. Cheng, M.F. Chen and S.W. Lee
1 Natl. Central Univ., Taiwan
18D-7-74
Withdrawn

18D-7-77
Rheology Enhancement of Polypyrrole/Alginate Nanocomposite
T. Thanpitcha 1, A. Sirivat 1, A.M. Jamieson 2
and R. Rujiravanit 1
1 Chulalongkorn Univ., Thailand and 2 Case
Western Reserve Univ., USA
18D-7-80
Preparation and Characterization of Zinc
Oxide Films Deposition by Ion Beam Assisted
Molecular Beam Epitaxy
S.J. Kim 1, W.-K. Choi 2 and H.K. Park 3
1 Yonsei Univ. 2 KIST and 3 ETRI, Korea
18D-7-83
Hydrothermal Synthesis, Characterizations andApplications of ZnO Nanowire Array and Its
Heterostructures
M. Seol, Y. Tak and K. Yong
POSTECH, Korea
18D-7-86
Preparation of ZnSe Nanocrystals using
Water-in-oil Microemulsions
H.S. Kim, J.S. Kim, H.H. Yoon, J.H. Kim and
S.J. Park
Kyungwon Univ., Korea
18D-7-89
Field Emission Characteristics of TiO2
Nanostructures with Various Nitrogen -Doping
Contents
K.-Y. Lee, J.-H. Cai and K.-S. Nian
Natl. Taiwan Univ. of Sci. and Technol.,Taiwan18D-7-61
Deposition Yield and Physical Property of
Carbon Films Deposited by FIB-CVD
T. Kaito 1, H. Oba 1, Y. Sugiyama 1,
A. Yasaka 1, J. Fujita 2, T. Suzuki 3,
K. Kanda 4 and S. Matsui 4
1 SII NanoTechnol., 2 Univ. of Tsukuba, 3
Nagaoka Univ. of Technol. and 4 Univ. of
Hyogo, Japan
18D-7-64
Effect of Mask Pattern Distance on Diameterof Nanorod formed in a N-Type Silicon
K.-P. Kim, H.-K. Lyu, S.-K. Lim and D.-I.
Chang
Daegu-Gyeongbuk Inst. of Sci. and Technol.
(DGIST), Korea

18D-7-62
Fabrication of Perylenediimide Nanoparticle byLaser Ablation in Water
T. Asahi and R. Yasukuni
Osaka Univ., Japan

18D-7-65
Surface
Smoothingof
Polycrystalline
Substrates with Gas Cluster Ion Beams
T. Mashita, N. Toyoda and I. Yamada
Univ. of Hyogo, Japan

18D-7-67
Controlled Synthesis of TiO2 Nanotubes by
Anodic Oxidation and Their Application in
Dye Sensitized Solar Cells
T. Kim, S.H. Jee, S.J. Kim, Y.S. Yoon and
S.-Y. Choi
Yonsei Univ., Korea
18D-7-69
Optical Properties and N2 Adsorption
Characteristic of Self-Twin Zinc Oxide
Nanoarrays Assemblies
X.L. Hu, Y. Masuda, T. Ohji and K. Kato
AIST, Japan
18D-7-72
Large-Scale Synthesis of Single-Crystal
Porous Platinum Naocubes
Y. Yang 1,2, R. Koike 2, G. Kawamura 2 and
M. Nogami 21 Chinese Academy of Sciences, China and 2
Nagoya Inst. of Technol., Japan
18D-7-75 Withdrawn
Coprecipitation - Assisted Hydrothermal
Synthesis of PLZT Hollow Sphere in The Size
Regime of about 4nm
K. Zhu, R. Zhu, H. Ji and J. Qiu
Nanjing Univ. of Aeronautics andAstronautics, China
18D-7-78
Effects of Electrolytes and Pore Widening on
Photoluminescence of Nanoporous Alumina
Membranes
C.-Y. Yen 1, S.-C. Lo 2,3, J.-H. Chen 2 andC.-G. Kuo 1
1 Natl. Taiwan Normal Univ., 2 Material andChemical Res. Labs. and 3 ITRI, Taiwan
18D-7-81
Preparation
andCharacterizationof
Bi2Cu0.1V0.9O5.35X Electrolyte Material for
SOFC Application
J.G. Lee, S.H. Kim, H.W. Choi, K.H. Kim and
H.H. Yoon
Kyungwon Univ., Seongnam, Korea
18D-7-84
Atomic and Electronic Structure Investigationof Eu2+ Doped
β-SialON: ab initio
Calculations
D.S. Yoo, S.-H. Lee, H.-L. Park andY.-C. Chung
Hanyang Univ., Korea
18D-7-87
Direct Precipitation of AuNPs on Polystyrene
Spheres having Bifunctional Groups
S.C. Hsiao 1, J.L. Ou 1, Y. Sung 2 and
M.D. Ger 1
1 Natl. Defense Univ. and 2 Chung Shan Inst.
of Sci. and Technol., Taiwan
18D-7-90
Magnetic Ordering in Epitaxial Au
Nanostructures on Si(100)
Y.-L. Huang, H.-L. Wang, M.-H. Wu and
Z.-Y. Yu
Natl. Dong Hwa Univ., Taiwan-7-

18D-7-70
Excimer Assisted Low-Temperature Annealingof Electro-Spinning Deposited Titanium Oxide
Nanowires
T. Ishida 1,2 and T. Itoh 1,2
1 AIST and 2 NEDO, Japan
18D-7-73
Growth Mechanism and Characteristics of ZnO
Nanostructures doped with In and Ga
S.-H. Yang, S.-Y. Hong, C.-H. Tsai and
S.-X. Li
Natl. Kaohsiung Univ. of Applied Sci.,
Taiwan18D-7-76
Formation, Characterization and Properties of
Al-Doped V2O5 Nanorods
M.W. Huang 1, Y.C. Su 2, L.W. Chang 2,
F.S. Shieu 1 and H.C. Shih 1,2
1 Natl. Chung Hsing Univ. and 2 Natl. Tsing
Hua Univ., Taiwan
18D-7-79
Preparation of CdS with Reverse Micelle
Method and Photo-Degradation of Toxic
Organic
Y. He 1, P. Wang 1, A.P. Deng 1, J. Yang 1,
Y.P. Huang 1 and Y. Yang 2
1 Three Gorges Univ. and 2 Chinese Academiyof Sciences, China
18D-7-82
Fabrication and Characterization GDCElectrolyte Thin Films by E-Beam Techniquefor IT-SOFC
S.H. Kim, J.G. Lee, H.W. Choi, K.H. Kim and
H.H. Yoon
Kyungwon Univ., Korea
18D-7-85
Effect of Applied Pressure on Preparation of
Mesoporous NiO-SDC Anode for SOFC
I. Lee, H.W. Choi, K.H. Kim, H.H. Yoon and
S.J. Park
Kyungwon Univ., Korea
18D-7-88
Anisotropic Exciton Rabi Oscillations in
Telecommunication Band Quantum Dot
T. Miyazawa, T. Nakaoka, K. Watanabe,
N. Kumagai and Y. Arakawa
Univ. of Tokyo, Japan
18D-7-91
Optical Characteristic of inclined ZnO
Nanowire Array by Oblique Angle Sputteringand Hydrothermal Process
J.-H. Huang 1, C.-Y. Chen 2, Y.-F. Lai 1,
Y.-C. Lin 1, Y.-I. Shih 1, J.H. He 2 and C.-P. Liu 1
1 Natl. Cheng Kung Univ. and 2 Natl. Taiwan
Univ., Taiwan

18D-7-92
Barrier Properties of TiNx Thin Films formed
by New Deposition Method assisted by
Radical Reaction
M.B. Takeyama 1, M. Sato 1, Y. Hayasaka 2,
E. Aoyagi 2 and A. Noya 1
1 Kitami Inst. of Technol. and 2 Tohoku Univ.,Japan
Nano-Tool
18D-7-94
Temperature Dependence of Cantilevered
Carbon Anotube Oscillation
S. Fukami, T. Arie and S. Akita
Osaka Pref. Univ., Japan

18D-7-93
Fabrication of Metal Nanowires Sandwichedwith Gold for Self- Assembling of NW
Sensors
M. Yamanaka 1, K. Aoki 1, Y. Ishida 1,
Y. Ohya 1, S. Tanaka 2, T. Shimizu 3, andS. Shingubara 1
1 Kansai Univ. 2 Natl. Inst. of Information andCommunications Technol. and 3 Seicho, Japan
18D-7-95
Vibration Characteristics-Tunable Resonator
Fabrication by Focused–Ion -Beam Chemical
Vapor Deposition
S. Nishi, R. Kometani, S. Warisawa and
S. Ishihara
Univ. of Tokyo, Japan
18D-7-98
Electrical Circuit Fabrication with Nano- Size
Copper Ink by Ink-Jet Print
Y. Kumashiro 1,2, H. Nakako 1, M. Inada 1,
K. Kuroda 1, K. Yamamoto 1 and A. Izumi 2
1 Hitachi Chemical and 2 Kyushu Inst. ofTechnol., Japan
18D-7-101
Field Emission Characteristics of the
Screen-Printed Marimo Carbon
T. Aoki 1, H. Gamo 2, K. Nakagawa 3,
T. Ando 4 and M. N.-Gamo 1
1 Toyo Univ., 2 Toppan Printing, 3 Kansai
Univ. and 4 NIMS, Japan

18D-7-97
Inkjet Printed Ni/Au Soruce/Drain Electrodefor Organic Thin-Film Transistor
W.D. Chen 1, C.P. Chang 1, Y. Sung 2 and
M.D. Ger 1
1 Natl. Defense Univ., 2 Chung Shan Inst. ofSci. and Technol., Taiwan
18D-7-100
Latex Sphere Monolayers as a Versatile
Platform for Nano-Texturing of Surfaces for
Microanalysis
H. Takei, T. Yamaguchi, T. Kaya and
M. Aoyama
Toyo Univ., Japan
18D-7-104
18D-7-103
Electronic Properties of Crossed In2O3-CuO Nanostructured Metal Templates as Catalyst
Nanowire Junction assembled Inside DB-FIB Arrays for Nanostructure Growth
System
H.D. Wanzenboeck, G. Hochleitner,
M.-W. Lai 1, S.-C. Hsu 1, S.-C. Lo 1 and
P. Roediger, K. Alberer, A. Lugstein and
C.-W. Hsu 2
E. Bertagnolli
1 ITRI and 2 Natl. Tsing Hua Univ., Taiwan
Vienna Univ. of Technol., Austria
Nanoimprint, Nanoprint and Rising Lithography
18D-7-105
18D-7-106
EffectsofEnvironmental
Gas
in Resist
Properties
ofPoly(Methyl
UV-Nanoimprint on Characteristics of Methacrylate) and Poly (Styrene) Thin Films
patterned
byThermalNanoimprint
UV-Curable Resin
Lithography for Au Electrodeposition
Q. Wang 1,2 and H. Hiroshima 1,2
1 AIST and 2 CREST-JST, JapanK. Nagase, S. Kubo and M. Nakagawa
Tohoku Univ., Japan
18D-7-108
18D-7-109
Size Dependence of Quick Cavity Filling A New Hybrid Mold Technology for
Behavior in UV Nanoimprint using Ultraviolet Nanoimprint Lithography
Pentafluoropropane Gas
C.-H. Lin 1, C.-Y. Wang 1, C.-T. Chuang 2
S.-W. Youn 1,2, H. Hiroshima 1,2,
and R. Chen 2
M. Takahashi 1 and R. Maeda 1
1 Chinese Culture Univ. and 2 Natl. Tsing Hua
1 AIST and 2 CREST-JST, Japan
Univ., Taiwan
18D-7-111
18D-7-112
Fluorescent UV-Curable Resists for UV Nanoimprint on Sol-Gel Low-K Porous Silica
Nanoimprint Lithography
M. Okada 1,3,4, Y. Kang 1,3, T. Nakayama 2,
K. Kobayashi 1,2, N. Sakai 3, S. Matsui 2,4 Y. Haruyama 1,3, K. Kanda 1,3 and S. Matsui
and M. Nakagawa 1,2
1,3
1 Tohoku Univ., 2 CREST-JST, 3 Toyo 1 Univ. of Hyogo, 2 ULVAC, 3 CREST-JST
Gosei and 4 Univ. of Hyogo, Japanand 4 JSPS, Japan
18D-7-114
18D-7-115
Roll-To-Roll Micro-Replication Process on Molecular Dynamics Study on Polymer Filling
Process in Nanoimprint Lithography
Flexible Plastic Substrate
A. Taga 1,2, S. Horimoto 1, M. Shibata 1,2,
C.W. Hsieh, M.Y. Hsieh, H.Y. Lin,M. Yasuda 1,2, H. Kawata 1,2 and Y. Hirai 1,2
T.H. Chou, K.Y. Cheng and T.L. Chang
1 Osaka Pref. Univ. and 2 CREST-JST,
ITRI, Taiwan
Japan
Bio MEMS, Lab on a Chip
18D-7-117
SensingMembrane-BasedNd2TiO5
Electrolyte-Insulator-Semiconductor for pH
Detection and Urea Biosensor
T.-M. Pan, Z.-H. Lu, J.-C. Lin, Y.-K. Chien,
M.-H. Wu and C.-S. Lai
Chang Gung Univ., Taiwan

18D-7-118
High Efficiency Micro Reactor operated by
Surface-Acoustic-Wave
T. Saiki 1,2, K. Okada 2 and Y. Utsumi 2
1 Hyogo Pref. Inst. of Technol. and 2 Univ. of
Hyogo, Japan-8-

18D-7-96
Active Feedback Cooling of a
Micromechanical Beam Resonator
T. Watanabe 1,2, K. Onomitsu 1 andH. Yamaguchi 1,2
1 NTT and 2 Tohoku Univ., Japan

GaAs

18D-7-99
Polarization Characteristics of Light Emission
from an individual Multiwall Carbon Nanotube
during Joule Heating
Y. Ohshima, T. Arie and S. Akita
Osaka Pref. Univ., Japan
18D-7-102
Molecular Dynamics Simulation of NC-AFM
Surface Vacancy Characterization: Influence ofTemperature
H.N. Pishkenari and A. Meghdri
Sharif Univ. of Technol., Iran

18D-7-107
Enhancement in Light Conversion Efficiencyof Silicon Solar Cells by using Nanoimprint
Anti-Reflection Layer
J.Y. Chen and K.W. Sun
Natl. Chiao Tung Univ., Taiwan
18D-7-110
Resist Profile Simulation in UV- Nanoimprint
Lithography
M. Shibata 1,2, A. Horiba 1, H. Kawata 1,2 and
Y. Hirai 1,2
1 Osaka Pref. Univ. and 2 CREST-JST,
Japan
18D-7-113
Ultrasonic Nanoimprint in Spin-On-Glass(SOG) coated on Si Substrate
H. Mekaru and M. Takahashi
AIST, Japan
18D-7-116
Injection
Moldingof
Nanopatterned
Polymethylpentene Substrates for Bio-Optical
Applications
R. Hainberger 1, R. Bruck 1, N. Kataeva 1,
R. Heer 1, A. Köck 1, P. Czepl 2, K. Kaiblinger
2, F. Pipelka 2 and B. Bilenberg 3
1 Austrian Inst. of Technol., 2 Hubertus Goller,
Austria and 3 NIL Technol., Denmark
18D-7-119
Testing of Novel Two-Dimensional Coplanar
Microfluidic Array System
S.-M. Tseng, M.C. Ho and R. Chen
Natl. Tsing Hua Univ., Taiwan

18D-7-120
Trap Probability Analysis of DNA Trap using
Electric and Hydrodrag Force Fields in Taper
Shaped Microchannel
Y. Tomizawa and Y Takamura
JAIST, Japan
18D-7-123
NiSi/Si Nanowire Schottky Diode as Charged
Molecule Detection
C.-T. Yeh, C.-C. Chen and J.-T. Sheu
Natl. Chiao Tung Univ., Taiwan
18D-7-126
Multi- Chamber PCR Device for Accurate
Clinical Diagnosis with Liquid Introduction
utilizing PDMS Gas Permeability
N.B. Trung 1, E. Tamiya 2 and Y. Takamura 1
1 JAIST and 2 Osaka Univ., Japan
Microsystem Technology and MEMS
18D-7-128
FEM Analysis of Micro End Mills to Estimate
Machining Errors due to Tool Deflection
H.-S. Sohn 1, H.-Y. Lee 1, H.-J. Cho 1, J.-S.
Lim 1, T.-I. Seo 1 and J.-I. Sohn 2
1 Univ. of Incheon and 2 KITECH, Korea
18D-7-131
Laser Assisted Powder Jet Implantation
Wirings using Copper Micro-Particles
M. Miura 1, A. Konno 1, K. Suzuki 1,
K. Miura 2, T. Yuzawa 3, M. Watanabe 3 andT. Kuriyagawa 4
1 Miyagi Natl. College of Technol., 2 Miura
Sensor Res. 3 G.E.S. and 4 Tohoku Univ.,
Japan
18D-7-134
CMOS-MEMS Piezoresistive Force Sensor for
Vertical Probe Card
K.-Y. Lee, J.-T. Huang, H.-J. Hsu, M.-C. Chiu
and T.-C. TsaiNatl. Taipei Univ. of Technol., Taiwan
18D-7-137
Fabrication of Silicon and Carbon
Nanotube-Based Hollow Needles using a
Hydrogenstimulated Deep Reactive Ion
Etching
Z. Sanaee, M. Mehran and S. Mohajerzadeh
Univ. of Tehran, Iran
18D-7-140
Investigation on the Frequency Discrepancy
between Actuator-Membrane Displacement
and Flow Rate Spectrum of Diaphragm
Micropumps
Y.-C. Hsu 1, N.-B. Le 1 and L.-S. Jang 2
1 Southern Taiwan Univ. and 2 Natl. Cheng
Kung Univ., Taiwan

18D-7-121
Manipulation of Single Particles and Cells
using nDEP and Microwell Electrodes
P.-H. Huang 1, K.-C. Lan 1, L.-S. Jang 1 andY.-C. Hsu 2
1 Natl. Cheng Kung Univ. and 2 Southern
Taiwan Univ., Taiwan
18D-7-124
Cell-Driven Micro Locomotion of MicroParts for Micro Assembly
T. Hoshino and K. Morishima
1 Tokyo Univ. of Agriculture and Technol.,Japan

18D-7-122
Fabrication Process of Flexible and Transparent
Microelectrode Arrays for in vivo Sensing
H. Takehara, A. Nagaoka, J. Noguchi,
T. Akagi, H. Kasai and T. Ichiki
Univ. of Tokyo, Japan
18D-7-125
Large-Scale RNA Microarray Printing using a
Femtoliter-Scale Microwell Array Plate as a
Template
S. Mohri 1,2, T. Osawa 1, M. Biyani 1,2,
T. Akagi 1,2 and T. Ichiki 1,2
1 Univ. of Tokyo and 2 CREST-JST, Japan

18D-7-127
A Novel Cell Purification Device based on
Fast Image Analysis in Cellomics Era
A. Hattori 1, M. Hayashi 1 and K. Yasuda 1, 2
1 Kanagawa Academy of Sci. and Technol.
and 2 Tokyo Medical and Dental Univ., Japan
18D-7-129
High Coplanarity and Fine Pitch Copper Pillar
Bumps Fabrication Method
H.-J. Hsu, J.-T. Huang, K.-Y. Lee andT.-C. TsaiNatl. Taipei Univ. of Technol., Taiwan
18D-7-132
The Influence of Laser Beam Scanning
Patterns in the Mask Fabrication forMicro-Abrasive Jet Machining
G.S. Yu 1, I.H. Lee 1 and T.J. Ko 2
1 Chungbuk Natl. Univ. and 2 Yeungnam
Univ., Korea

18D-7-130
Direct Writing of Resist Patterns Using an
Air-Pressure Dispenser with a Wire Nozzle
S. Ohtsuka and T. Horiuchi
Tokyo Denki Univ., Japan

18D-7-135
Fabrication of Well-Ordered Wrinkling ZnOMicrostructures by PMMA Templates
J.C. Lee 1, M.H. Hon 1, I.C. Leu 2 andH.Y. Lin 1
1 Natl. Cheng Kung Univ. and 2 Natl. Univ.
of Tainan, Taiwan
18D-7-138
Fabrication of a Micro Hole-Array for Hollow
Cathode Discharges
G. Kim, K. Kim, K. Choi and S.S. Yang
Ajou Univ., Korea

18D-7-136
Fabrication of a Microlens Array Based on
Quartz Wet Etching and its Application in
Photolithography
M. Nam, H. Oh, G. Kim, K. Lee and S. Yang
Ajou Univ., Korea

18D-7-141
Investigation and Characterization into The
Micropump Performance Enhancement by
Utilizing the Improvement in The Hydrophilic
Property of Microfluidic System
Y.–C. Hsu 1, M.-S. Lin 1 and L.-S. Jang 2
1 Southern Taiwan Univ. and 2 Natl. Cheng
Kung Univ., Taiwan
Room P (3F)
18:15-20:15 Banquet
Namba Award Ceremony-9-18D-7-133
Conductive Silver Patterns via Ethylene Glycol
Vapor Reduction of Ink-Jet Printed Silver
Nitrate Tracks on a Polyimide Substrate
J.-T. Wu, S.L.-C. Hsu, M.-H. Tsai and
W.-S. Hwang
Natl. Cheng-Kung Univ., Tainan

18D-7-139
Enhancement of the Durability of a
MEMS-Based Liquid Droplet Lens
J.K. Lee, K.W. Park, H.R. Kim and S.H. Kong
Kyungpook Natl. Univ., Korea

Thursday, November 19, 2009
Room A (3F)
19A-8: Nano-Carbon Devices

Room B (3F)
19B-8: Nanofabrication I

Room C (3F)
19C-8: Electron & Ion Beam Lithography

Chairpersons:Y. Ohno (Nagoya Univ.),
K. Maehashi (Osaka Univ.)
19A-8-1 9:00
GHz Graphene Gtransistor for RF Application(Invited)
Y.-M. Lin, K. Jenkins, C. Dimitrakopoulos,
A. Valdes-Garcia, D. Farmer, H.-Y. Chiu,
J.H. Hannon, P. Avouris and A. Grill
IBM T.J. Watson Res, USA
19A-8-2 9:30
Importance of Graphene/Metal Contact for
High-Performance Graphene FET
K. Nagashio, T. Nishimura, K. Kita andA. Toriumi
Univ. of Tokyo, Japan

Chairpersons:T. Hasegawa (NIMS)
A. Kohno (Fukuoka Univ.)
19B-8-1 9:00
Toward Nanoscale Functional PDMS by
Embedding Vertical Au/SiO2/Au Nanosheets
for Wettability Enhancement
L. Jalabert, M. Kumemura, C. Bottier andH. Fujita
Univ. of Tokyo, Japan
19B-8-2 9:20
Functional Thin Film Fabrication by
Nanoinkjet Printing Method based on AFM
K. Kaisei, K. Kobayashi, H. Yamada andK. Matsushige
Kyoto Univ., Japa

Chairpersons:
H. Yamashita (HOYA)
J. Yanagisawa (Univ. of Shiga Pref.)19C-8-1 9:00
Projection Charged Particle Nanolithography
and Nanopatterning (Invited)
H. Loeschner and E. Platzgummer
IMS Nanofabrication, Austria

19A-8-3 9:50
Ambipolar Behavior in Epitaxial Graphene
Based FETs on Si Substrate
R. Olac-vaw 1, H.-C. Kang 1, H. Karasawa 1,
Y. Miyamoto 1, H. Handa 1, H. Fukidome
1,2, T. Suemitsu 1,2, M. Suemitsu 1,2 andT. Otsuji 1,2
1 Tohoku Univ. and 2 CREST-JST, Japan
19A-8-4 10:10
Logic Gates based on Carbon Nanotube
Field-Effect Transistors with SiNx Passivation
Films
T. Kishimoto, Y. Ohno, K. Maehashi, K. Inoueand K. Matsumoto
Osaka Univ., Japan
19A-8-5 10:30
Control of Carrier Type for High- Performance
Carbon Nanotube Fets by Fixed Charges
Incorporated in Gate Insulator
Y. Ohno, N. Moriyama, T. Kitamura,
S. Kishimoto and T. Mizutani
Nagoya Univ., Japan

19B-8-3 9:40
Fabrication of Pt Nanocrystalline Field Emitter
forElectron-Wave
InterferencebyBeam-Induced Deposition
K. Murakami, T. Matsuo, F. Wakaya and
M. Takai
Osaka Univ., Japan

19C-8-2 9:30
Electron Beam Recorder for Patterned
Magnetic Media Mastering
H. Kitahara, Y. Uno, H. Suzuki, T. Kobayashi,
H. Tanaka, Y. Kojima, M. Kobayashi,
M. Katsumura, Y. Wada and T. Iida
PIONEER, Japan
19C-8-3 9:50
Proximity Effect Correction for Three
Dimensional e-Beam Lithography
N. Belic 1, N. Unal 1, D. Ritter 1, U. Hofmann
1 and D. Mahalu 2
1 GenISys, Germany and 2 Weizmann Instituteof Sci. in Rehovot-Israel, Israel

19B-8-4 10:00
Evaluation of interfacial Layer for Restraint of
Fermi Level Pinning
Y. Iwashita 1, T. Adachi 2, K. Itaka 2,
A. Ogura 1 and T. Chikyow 2
1 Meiji Univ. and 2 NIMS, Japan

19C-8-4 10:10
An Electron Field Emitter assisted by Electric
Field Enhancement of Plasmon Resonance
K. Iwami, A. Iizuka and N. Umeda
Tokyo Univ. of Agriculture and Technol.,Japan

19B-8-5 10:20
A Nano Thermometer based on a Single
Sb2Se3 Nanorod
T.Y. Fan 1, K.W. Sun 1 and C.W. Liu 2
1 Natl. Chiao Tung Univ. and 2 Natl. Dong
Hwa Univ., Taiwan

19C-8-5 10:30
Non Core-Shell Nanostructure Deposition on
Focused-Ion-Beam Chemical Vapor Deposition
R. Kometani, S. Warisawa and S. Ishihara
1 Univ. of Tokyo, Japan
19C-8: 10:50-11:05, Author's Interview

Room D1 and Room D2 (2F)
Coffee BreakRoom A (3F)
19A-9: Nanowire Device

Room B (3F)
19B-9: Nanofabrication II

Room C (3F)
19C-9: Resist Materials and Processing I

Chairpersons:
K. Nishiguchi (NTT)N. Banno (NEC)
19A-9-1L 11:10
Observation of Electron Quantum-Interferences
in a Chemically Synthesized Si Nanowire
F. Kutsuna 1,2, S. Huang 1, N. Fukata 3,4 andK. Ishibashi 1
1 RIKEN, 2 Tokyo Univ. of Sci., 3 NIMS and
4 PRESTO-JST, Japan

Chairpersons:M. Masahara (AIST)
K. Takase (Nihon Univ.)
19B-9-1 11:00
Development of Nanogap Switching Devices
for Memories (Invited)
M. Ono 1, S. Furuta 1, Y. Masuda 1,
T. Sumiya 1, T. Takahashi 1, H. Suga 2,
M. Horikawa 2, T. Shimizu 2, and Y. Nitoh 2
1 Funai Electric Adv. Appl. Tech. Res. Inst.
and 2 AIST, Japan
19B-9-2 11:30
Stacked Nanowire Gate all Around (GAA) andPhi (Φ) Field Effect Transistors Fabrication
S. Pauliac-Vaujour, C. Comboroure, C. Vizioz,
S. Barnola, V. Maffini Alvaro, A. Hubert,
C. Dupre and T. Ernst
CEA/LETI, France

Chairpersons:
H. Oizumi (Selete)
M. Endo (Osaka Univ.)
19C-9-1 11:10
Non-Chemically Amplified Negative Resist for
EUV Lithography (Invited)
M. Shirai
Osaka Pref. Univ., Japan

19A-9-2 11:30
A Comparison of Corner Effect in
Gate-All-AroundandTriple-Gate
Multiple-Nanowire
SONOS
Thin-Film
Transistors
P.-C. Huang, L.-A. Chen and J.-T. Sheu
Natl. Chiao Tung Univ., Taiwan
19A-9-3 11:50
Single-Electron Stochastic Resonance using Si
Nano-Wire Transistors
K. Nishiguchi, S. Miyamoto and A. Fujiwara
NTT, Japan

19B-9-3 11:50
Connection of Polydiacetylene Nanowires to aSingle Functional Molecule via Covalent
Bonds
Y. Okawa 1, S. K. Mandal 1, T. Hasegawa 1,
S. Tsukamoto 2, C. Hu 1, Y. Tateyama 1,3,
J. P. Hill 1, K. Ariga 1 and M. Aono 1
1 NIMS, Japan, 2 Forschungszentrum Juelich,
Germany and 3 PRESTO-JST, Japan- 10 -

19C-9-2 11:40
Dynamics of Radical Cation of Protected
Poly(4-Hydroxystyrene)s for EUV andElectron Beam Resists
K. Okamoto 1,2, M. Tanaka 3, T. Kozawa 2,3,
S. Tagawa 2,3 and T. Sumiyoshi 1
1 Hokkaido Univ., 2 CREST-JST and 3 Osaka
Univ., Japan
19C-9-3 12:00
High-Sensitivity Fluorine-Polymer Based
Resists for EUV Lithography
J.J. Santillan 1, T. Yamashita 2, M. Morita 2,
Y. Tanaka 2 and T. Itani 1
1 Selete and 2 Daikin Industries, Japan19A-9-4 12:10
Analysis on Voltage-Transfer Characteristics
In GaAs-Based Three -Branch Nanowire
Junctions controlled by Schottky Wrap Gates
D. Nakata1, H. Shibata1, Y. Shiratori1 and
S. Kasai 1,2
1 Hokkaido Univ. and 2 PRESTO-JST, Japan
19A-9-5 12:30
GaAs/AlGaAs Core-Multishell NanowireBased Light-Emitting-Diode Arrays on Si
Substrate
K. Tomioka, T. Tanaka, J. Motohisa, S. Hara,
K. Hiruma and T. Fukui
Hokkaido Univ., Japan
19A-8, 9: 12:50-13:05, Author's Interview

19B-9-4 12:10
Influence of Initial Internal Stress
Ion-Induced Bending (IIB) EffectT. Yoshida, M. Nagao and S. Kanemaru
AIST, Japanon

19B-9-5 12:30
Removal of Surface Oxide Layer from Silicon
Nanocrystals by HF Vapor Etching
Y. Nakamine 1,2, T. Kodera 1,2, K. Uchida
1,2 and S. Oda 1,2
1 Tokyo Inst. of Technol. and 2 SORST-JST,
Japan
19B-8, 9: 12:50-13:05, Author's Interview

19C-9-4 12:20
Studyon
Radiation
Chemistryof
Fluoronaphthalene for Extreme Ultraviolet
Resists
S. Ikeda 1,2, K. Okamoto 1,2, H. Yamamoto 1,2,
A. Saeki 1,2, T. Kozawa 1,2 and S. Tagawa 1,2
1 Osaka Univ. and 2 CREST-JST, Japan
19C-9-5 12:40
Simulation Studies on Relationship between
Resolution, Line Edge Roughness, andSensitivity in Chemically Amplified Resists ofElectron Beam Lithography
A. Saeki 1,2, T. Kozawa 1,2 and S. Tagawa 1,2
1 Osaka Univ. and 2 CREST-JST, Japan

Lunch
Poster Session II (14:10-16:10) : Room D1 and Room D2 (2F)
Poster Session II (14:10-18:10)
Nanodevices
19D-10-1
Unique Short-Channel Characteristics in
Sub-100 nm MOSFETs with Inversion-Layer
Source/Drain
V. Singh, H. Inokawa and H. Satoh
Shizuoka Univ., Japan
19D-10-3
The Influence of Source/Drain Extension
Region Profile and Spacer Length on Device
Performance of Tri-Gate Body-Tied FinFETs
J.-J. Song, D.-H. Moon and O. Kim
POSTECH, Korea

19D-10-2
Preliminary
StudyofBackscattering
Phenomenon from Drain Region in Silicon
Nanodiode using NEGF Approach
T. Tsutsumi and K. Tomizawa
Meiji Univ., Japan
19D-10-4
Low Temperature MOSFETs Technology with
Schottky Barrier Source/Drain, Novel
Structure, Metal Gate, and No Sidewall
J.-S. Oh, M.-S. Kim and W.-J. Cho
Kwangwoon Univ., Korea

19D-10-5
Structural
Properties
andElectrical
Characteristics of High-k Sm2TiO5 Gate
Dielectrics
T.-M. Pan, K.-M. Chen, L.-C. Yen and
S.-H. Su
Chang Gung Univ., Taiwan

19D-10-6
High
Frequency,
Real-Time
Current
Measurements of a Silicon Nanowire
Field-Effect-Transistor
H.T. Kim 1, Y.K. Kim 1, M.G. Kang 1,
D.J. Lee 1, M.S. Choi 1, J.H. Ahn 1, Y.S. Yu
3, J.S. Hwang 1, D. Ahn 4, D. Whang 2 and
S.W. Hwang 1
1 Korea Univ., 2 Sungkyunkwan Univ., 3
Hankyong Natl. Univ. and 4 Univ. of Seoul,
Korea
19D-10-8
Temperature Dependence of Excess Noise
Properties of AlN Nanowire Devices
L.C. Li 1, S.S. Hong 2, S.F. Jen 2, Y.W. Suen
2,3, T.W. Liu 4, G.M. Hsu 5, C.C. Chen 4,
L.C. Chen 6 and K.H. Chen 6
1 Natl. Chiao Tung Univ., 2 Natl. Chung
Hsing Univ., 3 Natl. Nano Device Labs., 4Natl. Taiwan Normal Univ., 5 Natl. Taiwan
Univ. and 6 Academia Sinica, Taiwan
19D-10-10
Resistance Switching in a SiC Nanowire/ Au
Nanoparticle Network
Y. Mori, H. Kohno and S. Takeda
Osaka Univ., Japan

19D-10-7
Fabrication
andHigh
Frequency
Characterization of Si Nanowire Transistor by
Dielectrophoresis Alignment
M.G. Kang. 1, J.H. Ahn 1, J.H. Lee 2,
D.H. Hwang 1, H.T. Kim 1, D.J. Lee 1, M.S.
Choi 1, J.S. Rieh 1, D.M. Whang 2,f M.H. Son
3, D Ahn 3, Y.S. Yu 4 and S.W. Hwang 1
1 Korea Univ., 2 Sungkyunkwan Univ., 3 Univ.
of Seoul and 4 Hankyong Natl. Univ., Korea
19D-10-9
Single-Hole Charging and Discharging
Phenomena in Carbon NAnotube Field-EffectTransistor-Based Nonvolatile Memory
T. Ohori, S. Nagaso, Y. Ohno, K. Maehashi,
K. Inoue and K. Matsumoto
Osaka Univ., Japan
19D-10-11
Enormous Magneto-Resistance Switchingobserved in Partially Ni-Filled AAO on Si
S. Yamanishi 1, Y. Shiotani 1, K. Murakami 2,
M. Takai 2, T. Shimizu 3 and S. Shingubara 1
1 Kansai Univ., 2 Osaka Univ. and 3 Seicho,
Japan

19D-10-12
Effect of Strained Channel on Electrical
Characteristics of Capacitorless DRAM Cell
M.-S. Kim, J.-S. Oh and W.-J. Cho
Kwangwoon Univ., Korea

Room C (3F)
19C-10: Resist Materials and Processing II
Chairpersons:
H. Kudo (Kanagawa Univ.)
S. Masuda (Fuji Film)
19C-10-1 14:10
Pattern
Transferabilityof
In-Plane
Half-Cylinders of Diblock Copolymers formedby Rapid Graphoepitaxy
T. Yamaguchi, K. Yamazaki and H. Yamaguchi
NTT, Japan
19C-10-2 14:30
Development of New Positive-Tone Molecular
Resists based on Fullerene Derivatives for EUV
Lithography
H. Oizumi 1, K. Tanaka 2, K. Kawakami 3 and
T. Itani 1
1 Selete, 2 Mitsubishi Chemical and 3
Mitsubishi Chemical Group Sci. and Technol.
Res. Ctr., Japan
19C-10-3 14:50
Decomposition and Roughness Analysis of CA
Molecular Resist for Reducing LWR
D. Shiono 1,2, H. Hada 1, K. Sato 1,
T. Watanabe 2 and H. Kinoshita 2
1 Tokyo Ohka Kogyo and 2 Univ. of Hyogo,Japan

19C-10-4 15:10
Negative Type EB- and EUV Resist Materials
based on Water-Wheel Like Cyclic Oligomer(Noria)H. Seki 1, Y. Kato 1, H. Kudo 1, T. Nishikubo
1, K. Maruyama 2, T. Kai 2, T. Shimokawa 2,
H. Oizumi 3 and T. Itani 3
1 Kanagawa Univ., 2 JSR and 3 Selete,Japan
19C-10-5 15:30
High Sensitivity and Resolution Fullerene
ResistJ. Manyam, M. Manickam, J.A. Preece,
R.E. Palmer and A.P.G. Robinson
Univ. of Birmingham, UK
19C-10-6 15:50
High Resolution Negative-Working Molecular
Resist derived from Truxene
S. Hattori, A. Yamada, S. Saito and
K. Asakawa
Toshiba, Japan
19C-9, 10: 16:10-16:25, Author's Interview

19D-10-13
Charge Trapping Characteristics of High-K HfO2
with Variable Thickness for High Performance
Non-Volatile Memory Applications
H.-W. You 1, G.-H. Park 1, J.-W. Jung 2 andW.-J. Cho 1
1 Kwangwoon Univ. and 2 Sejong Univ., Korea

19D-10-14
Electrical Properties of HfO2 with High-k
Tunnel Layer Charge Trap Flash Memory
S.-M. Oh 1, K.-S. Kim 1, G.-H. Park 1,
J.-W. Jung 2 and W.-J. Cho 1
1 Kwangwoon Univ. and 2 Sejong Univ.,
Korea- 11 -

19D-10-15
A
Local-Trapping,
Low-Voltage
andHigh-Speed Program Technique by a Substrate
Forward-Assisted Electron Injection in 2-Bit
SONOS Flash Memory
Y. Zhang, H.-M. An, H.D. Kim, Y.J. Seo andT.G. Kim
Korea Univ., Korea
19D-10-18
Carrier Charging Mechanism of Metal-Silicide
Nanocrystals with Multi-Stacked Tunnel Layer
D.U. Lee 1, K.B. Seo 1, S.J. Han 1, J.S. Kim 1,
S.P. Kim 1, E.K. Kim 1, G.-H. Park 2 andW.-J. Cho 2
1 Hanyang Univ. and 2 Kwangwoon Univ.,
Korea
19D-10-21
Low Temperature Poly-Si TFT Nonvolatile
Memory using Ni Nanocrystals as Charge
Trapping Centers fabricated by Hydrogen
Plasma Process
T. Wang 1, P.-L. Gao 1, M.-W. Ma 1,
S.W. Hung 2 and C.-T. Kuo 3
1 Natl. Chiao Tung Univ., 2 Natl. Tsing Hua
Univ. and 3 Min Dao Univ., Taiwan
19D-10-22
Fabrication of Self-Organized Microstructures
on Fluoropolymer Surface Using ion Beam
Irradiation
A. Kitamura 1, T. Kobayashi 2, A. Suzuki 1
and T. Terai 1
Univ. of Tokyo 1 and Riken 2, Japan
Nanofabrication
19D-10-23
Bottom-Up Fabrication of Hierarchically
Organized Metal Oxides Nanostructures by
Glancing Angle Deposition and Anodic Oxidation
I. Turkevych 1, Y. Pihosh 2, K. Hara 1 andM. Kondo 1
1 AIST and 2 NIMS, Japan
19D-10-26
Formation of ZnO Nanoscaled Photonic
Crystal by Laser interference Lithography
followed by Hydrothermal Synthesis
J.A. Kim 1, T.U. Kim 1,2, S.H. Kim 2, H.C. Ki
2, D.G. Kim 2, H.J. Kim 2, J.-H. Moon 1 andJ.H. Kim 1
1 Chonnam Natl. Univ. and 2 Korea Photonics
Technol. Inst., Korea
19D-10-29
Fabrication and Simulation of Micron- Scaled
3-D Inductors
H. M. Lee, Y. C. Lee, C. T. Chao, J. Y. Ou and
J. C. Wu
Natl. Changhua Univ. of Education, Taiwan
19D-10-32
Fabrication of Nano-Stacks on Thin Graphite
Layer and Observation of Size Dependent
Nonlinear Transport Characteristics
V. Gunasekaran and S.-J. Kim
Jeju Natl. Univ. Korea
19D-10-35
One-Pot Fabrication of Magnetism- Controlled
Silica Nanospheres via Sol-Gel Reaction of
Citrate-Capped Magnetites and TEOS Alkoxide
D. Yang and S.-W. Lee
Kyungwon Univ., Korea
19D-10-38
Prediction of Ion Energy Spectrum during
Plasma Etching for Trenches with Different
Aspect Ratio
A.P. Palov 1, Y.A. Mankelevich 1,
T.V. Rakhimova 1 and D. Shamiryan 2
1 Moscow State Univ., Russia and 2 IMEC,
Belgium

19D-10-16
A Four-Bit/Cell SONOS Array with Common
Source Line for High-Density Flash Memory
Applications
H.-M. An 1, Y. Zhang 1, H.D. Kim 1, Y.J. Seo
1, B. Kim 2 and T.G. Kim 1
1 Korea Univ. and 2 Jinju Natl. Univ., Korea

19D-10-17
ChargeInjection
Characteristics
of
NiSi-Nanodots/Silicon-Quantum-Dots Hybrid
Floating Gate in MOS Structures
M. Ikeda, S. Nakanishi, N. Morisawa,
K. Makihara and S. Miyazaki
Hiroshima Univ., Japan

19D-10-19
Electrical Characteristics of TiSi2 Nanocrystal
Nonvolatile Memory with Barrier Engineered
Tunnel Layer
S.J. Han 1, D.U. Lee 1, K.B. Seo 1, S.P. Kim
1, E.K. Kim 1, J.-S. Oh 2 and W.J. Cho 2
1 Hanyang Univ. and 2 Kwangwoon Univ.,
Korea
19D-10-142L
Electron-Phonon Interaction in Suspended Si
Double Quantum Dots
J. Ogi 1,4, T. Ferrus 2, T. Kodera 1,
Y. Tsuchiya 3,4, K. Uchida 1, 4, D. A.
Williams 2, S. Oda 1,4 and H. Mizuta 1,3,4
1 Tokyo Inst. of Technol., Japan, 2 Hitachi
Cambridge Lab., UK, 3 Univ. of Southampton,
UK and 4 SORST-JST, Japan

19D-10-20
Characteristics of Nonvolatile Memory with
Au@CdS Core/Shell Nanoparticles as Floating
Gates
B.-S. Jiang, C.-C. Chen and J.-T. Sheu
Natl. Chiao Tung Univ., Taiwan

19D-10-143L
Towards a Sub-10nm Optical Fibre Light
SourceG. Brambilla and F. Renna
Univ. of Southampton, UK

19D-10-24
Effects of Annealed ZnO Buffer Layer on
Structural and Optical Properties of ZnO
Nanorods by Hydrothermal Process
A.R. Kim, J.Y. Lee, B.R. Jang, H.S. Kim,
H.K. Park and N.W. Jang
Korea Maritime Univ., Korea
19D-10-27
Highly Controllable Silicon Nano-Grass andNano-Wire formation using a Hydrogenation
Assisted Deep Reactive Ion Etching
M. Mehran, Z. Sanaee and S. Mohajerzadeh
Univ. of Tehran, Iran

19D-10-25
Advances in Selective Wet Etching for Nano
Scale NiPt Salicide Fabrication
M.M. Chu and J.-H. Chou
Natl. Cheng Kung Univ., Taiwan

19D-10-30
The Fabrication of Flexible Thin Film withPattern Structure and Macroporous Arrayconsisting of Nanoparticles by theElectrophoretic Deposition Process
Y.-W. Chung, H.-C. Fang and J.-H. Lee
ITRI, Taiwan
19D-10-33
Planarization of Patterned Surface using N2
Cluster Ion Beams
N. Toyoda 1, T. Hirota 1, T. Mashita 1,
I. Yamada 1, H. Tani 2, K. Nagato 3,
T. Hamaguchi 3 and M. Nakao 3
1 Univ. of Hyogo, 2 Kansai Univ. and 3 Univ.
of Tokyo, Japan
19D-10-36
Surface Morphology of DLC Film and Si
Wafer Milled With 30kVGa-FIB
T. Kaito 1, M. Yasutake 1, A. Yasaka 1 andI. Miyamoto 2
1 SII NanoTechnol. and 2 Tokyo Univ. of Sci.,
Japan
19D-10-39
Patterning of InAs Nanowire by Dip-Pen
Nanolithography (DPN)
T. Wang, Y. Shimuzi and H. Ushijima
AIST, Japan

19D-10-31
Photoisomerization of Sterically Hindered
Azobenzene
Disulfide
Self-Assembled
Monolayers on Gold
D. Ishikawa 1, T. Honda 1, E. Ito 2, M. Han 1,2
and M. Hara 1,2
1 Tokyo Inst. of Technol. and 2 RIKEN, Japan
19D-10-34
Electronic Structures and Magnetism of fcc
Fe/Cu(111) Thin Films
H. Choi and Y.-C. Chung
Hanyang Univ., Korea- 12 -

19D-10-28
Size Control of Sige Nanowire Arrays using
Au-Assisted Chemical Etching and Subsequent
Oxidation
C.C. Lai, S.L. Cheng and S.W. Lee
Natl. Central Univ., Taiwan

19D-10-37
Transmission Electron Beam Drilling for
Nanoscale Fabrication
T.-C. Lin 1 and C.S. Wu 2
1 Natl. Yunlin Univ. of Sci. and Technol. and 2
Natl. Changhua Univ. of Education, Taiwan
19D-10-40
Fabrication of Nanoparticles Film from a
Surfactant-Containing Aqueous Suspension by
Electrical-Assisted Deposition Techniques inthe Liquid- and Gas-Phase
M.N. Naim 1, M. Iijima 1, M. Kuwata 2,
H. Kamiya 1 and I.W. Lenggoro 1
1 Tokyo Univ. of Agriculture and Technol. and2 Soka Univ., Japan19D-10-41
CIGS Solar Cells with an Indium-Based
Buffer Layers fabricated by Facing Target
Sputtering and Chemical-Bath-Deposition
J.H. Moon, Y.S. Jung, K.H. Kim, H.W. Choi
and S.J. Park
Kyungwon Univ., Korea
19D-10-145L
Investigation of Dry and Wet Etching of
PVD-TiN for Nanoscale FinFETs
Y. X. Liu 1, T. Kamei 2, K. Endo 1, S. O’uchi
1, J. Tsukada 1, H. Yamauchi 1, T. Hayashida2, Y. Ishikawa 1, T. Matsukawa 1,
K. Sakamoto 1, A. Ogura 2 and M. Masahara 1
1 AIST and 2 Meiji Univ., Japan
Nanomaterials
19D-10-43
Anti-Aging Mechanism of FullerenolContaining Natural Rubber
H. Kondo 1,2, Y. Ohtake 2 and Y. Izumi 1
1 Yamagata Univ. and 2 Chemicals Evaluation
and Res. Inst., Japan
19D-10-46
Optical and Paramagnetic Properties ofSize-Controlled Sepia-Ink Particles
T. Matsuura 1, M. Hino 1, S. Akutagawa 2,
Y. Shimoyama 2, T. Kobayashi 3, Y. Taya 3
and T. Ueno 4
1 Hokkaido Univ., 2 Muroran Inst. of Technol.,3 Hokkaido Industrial Technol. Ctr. and 4
Hakodate Natl. College of Technol., Japan
19D-10-49
Optimization of Swnts Synthesis Process inFive-Stage AACVD System
T. Sugihara, H. Takano, and M. Itoh
Doshisha Univ., Japan
19D-10-52
The Effect of the Morphology on the Field
Emission Properties of the Carbon
Nanomaterials grown in Organic Liquid
C. Arai 1, H. Gamo 2, T. Shibasaki 1, T. Ando
3 and M. N.-Gamo 1
1 Toyo Univ., 2 Toppan Printing and 3 NIMS,
Japan
19D-10-55
Atomic Investigation of Ti/Al(001) Interface
by Molecular Dynamics Simulation
G. Yoon, S.-G. Lee, B.-H. Kim andY.-C. Chung
Hanyang Univ., Korea
19D-10-58
Hydrothermal Synthesis of Pt-Ru-W Anode
Catalyst for Methanol Oxidation supported on
Multi-Walled Carbon Nanotubes
J.Y. Oh, S.H. Kim, N. Kakati and Y.S. Yoon
Yonsei Univ., Korea

19D-10-61
Electroless Deposition of Ni Nanoparticles on
Graphene Sheets
C.A. Wang 1, N.W. Pu 1, Y. Sung 2, Y.M. Liu
1 and M.D. Ger 1
1 Natl. Defense Univ. and 2 Chung Shan
Inst. of Sci. and Technol., Taiwan
19D-10-64
Synthesis of Nickel-Encapsulated Carbon
Nanocapsules and Nanotubes using Ni-Doped
Fullerene Nanofibers
A. Akagawa 1, K. Miyazawa 2 and T. Kizuka 1
1 Univ. of Tsukuba and 2 NIMS, Japan
19D-10-67
SynthesisofIron-Carbide-Encapsulated
Carbon Nanocapsules using Fe-Doped
Fullerene Nanofibers
J. Fujii 1, K. Miyazawa 2 and T. Kizuka 1
1 Univ. of Tsukuba and 2 NIMS, Japan

19D-10-42
On the Monolayer Chirality of Discotic
Hexakis-(3,4-Dodecyloxyphenylethylnyl)
BenzeneS.-L. Lee, Y.-C. Chu and C.-H. Chen
Natl. Taiwan Univ., Taiwan

19D-10-144L
Preparationof
Monodispersed
Gold
Nanoparticles
using
Room-Temperature
Atmospheric H2/Ar Microplasma Jet and theSubsequent Deposition on Nonheat-ResistantMaterials in Open Air
Y. Shimizu, K. Kawaguchi, T. Sasaki and
N. Koshizaki
AIST, Japan

19D-10-44
DC Plasma-Assisted Thermal Chemical Vapor
Deposition of Single-Walled Carbon Nanotubes
Y. Fukuda 1, J. Takayama 1, N. Asaoka 1,
Y. Suda 2, H. Sugawara 1 and A. Murayama 1
1 Hokkaido Univ. and 2 Toyohashi Univ. ofTechnol., Japan
19D-10-47
Diffusion Dynamics of Lithium Ion on the
Nano-Carbon Materials
H. Tachikawa 1, Y. Nagoya 1 and
H. Kawabata 2
1 Hokkaido Univ. and 2 Kyoto Univ., Japan

19D-10-45
Dispersion of Single-Walled Carbon Nanotubes
by Proteins
A. Hirano 1, Y. Maeda 2,3, T. Akasaka 1 andK. Shiraki 1
1 Univ. of Tsukuba, 2 Tokyo Gakugei Univ.
and 3 PRESTO-JST, Japan
19D-10-48
Evaporation Dinamics of Water Molecules on
Nanocarbon Materials : A DFT and MD Study
S. Abe, Y. Nagoya, F. Watari and
H. Tachikawa
Hokkaido Univ., Japan

19D-10-50
Utilization of Ammonia Gas for Green
Synthesis of Antimicrobial-Bacterial Cellulose
C. Katepetch and R. Rujiravanit
Chulalongkorn Univ., Thailand

19D-10-51
Cluster-Nature Solvent Features of Single-Wall
Carbon Nanohorns
F. Torrens 1 and G. Castellano 2
1 Univ. of Valencia and 2 San Vicente Mártir,
Spain
19D-10-54
Si-Carbon Composite Synthesized by Semi Mass
Production Method for High Capacitive Anode
J.A. Shim 1, S.H. Kim 1, C.W. Park 2 andY.S. Yoon 1
1 Yonsei Univ. and 2 Sodiff Advanced
Materials, Korea

19D-10-53
Catalytic Synthesis of Spiralled Carbon
Nanofilaments using Pd Catalyst
M. Kikuchi 1, H. Gamo 2, K. Nakagawa 3,
T. Ando 4 and M. Nishitani-Gamo 1
1 Toyo Univ., 2 Toppan Printing 3 Kansai
Univ. and 4 NIMS, Japan
19D-10-56
High-Performance n-Type Materials for Bulk
Heterojunction Organic Photovoltaic Cell
Y. Tajima 1 and Y. Numata 2
1 RIKEN and 2 NIMS, Japan

19D-10-57
Withdrawn
Micro/Nanospheres from Polysilsequioxane containing UVBAbsorbing Group, P. Kritsaneepaiboon and S.P.
Wanichwecharungruang, Chulalongkorn Univ., Thailand

19D-10-59
Synergistic Effects due to the Mixed
Dipersants of Polysaccharide and Surfactant on
the Selective Chiral Separation forSingle-Walled Carbon Nanotubes with Density
Gradient Ultracentrifugation
Y. Kaminosono, K. Uchida, K. Tsuchiya,
T. Ishii and H. Yajima
Tokyo Univ. of Sci., Japan
19D-10-62
Carbon Nanotube Field Emission CathodeFabricated with Modified Electroless Plating
K.J. Chung 1, Y.M. Liu 1, Y. Sung 2,
W.D. Chen 1, N.W. Pu 1 and M.D. Ger 1
1 Natl. Defense Univ. and 2 Chung Shan Inst.
of Sci. and Technol., Taiwan
19D-10-65
Current-Voltage Characteristics of Silver
Nanocontacts
H. Masuda and T. Kizuka
Univ. of Tsukuba, Japan

19D-10-66
In Situ Transmission Electron Microscopy of
Bending Process of Crystalline C70 Nanotubes
T. Tokumine 1, K. Miyazawa 2 and T. Kizuka 1
1 Univ. of Tsukuba and 2 NIMS, Japan

19D-10-68
Current-Voltage Characteristics
Nanocontacts
T. Matsuda and T. Kizuka
Univ. of Tsukuba, Japan

19D-10-146L
ZnO Films Fabricated by Microwave Plasma
Jet Sintering System
C.H. Su and C.M. Huang
National Taipei Univ. of Technol.,Taiwan- 13 -ofGold

19D-10-60
Peculiar Electronic States induced by Ring
Closure of Single Wall Carbon Nanotubes
T. Suzuki 1,2, A. Hida 1 and K. Ishibashi 1
1 RIKEN and 2 Tokyo Univ. of Sci.,
Japan

19D-10-63
Structure and Conductance of Au-Doped
Germanium Nanocontacts
T. Kase and T. Kizuka
Univ. of Tsukuba, Japan19D-10-147LTransformation of Insulating Nanowires into
Carbon Nanotubes by Applying an Electric
Current
H. Kohno 1, T. Nogami 1, Y. Ohno 2 andS. Ichikawa 1
1 Osaka Univ. and 2 Tohoku Univ., Japan
Nano-Tool
19D-10-69
Metrology of Nano-Thickness Foils Wide Field
of View Homogeneity by Conventional andPhase Contrast Soft X-Ray Imaging
A.Y. Faenov 1,2 , T.A. Pikuz 1,2, Y. Fukuda 1,
M. Kando 1, H. Kotaki 1, T. Homma 1,
K. Kawase 1, T.I.Y. Skobelev 2, S.V. Gasilov
2, T. Kawachi 1, H. Daido 1, T. Tajima 1, Y.
Kato 3 and S.V. Bulanov 1
1 JAEA, Japan, 2 Russian Academy of Sci.,
Russia and 3 Creation of New Photonics
Industries, Japan
19D-10-72
Fracture Mechanism of Nanoindentation ofGraphite with a Conical Indenter
T.-H. Fang 1 and W.-J. Chang
1 Natl. Formosa Univ. and 2 Kun Shan Univ.,
Taiwan19D-10-75
Development
of
FIB/SEM-Integrated
Nanotweezers for Nano-Particle Removal
T. Umemoto 1, M. Yasutake 1, H. Shigemura
2 and O. Suga 1
1 Seiko Instruments and 2 Selete, Japan

19D-10-148L
Single-crystal ZnO Porous Nanostructures byHydrothermal Growth and Thermal Annealing
Y.-I. Shih, J.-H. Huang, Y.-C. Lin,
M.R.S. Huang and C.-P. Liu
National Cheng-Kung Univ., Taiwan
19D-10-70
Measurement of Thin Film Thickness on a
Roller by using a Focusing Reflectometer
G.-Y. Chen, Y.-P. Chen, H.-C. Chiu,
C.-H. Chiang, C.-T. Tseng, C.-H. Lee and
L.A. Wang
Natl. Taiwan Univ., Taiwan

19D-10-71
Mechanical Properties of Vertically Aligned
Multi-Walled Carbon Nanotube/Parylene
Nanocomposites
C.-L. Wu 1, C.-M. Lin 2, Y.-K. Chih 1,
M.-C. Yip 2 and W. Fang 2
1 Industrial Technol. Res. Inst. and 2 Natl.
Tsing Hua Univ., Taiwan

19D-10-73
Pushing Force Planning during AFM-Based
Nanoparticle Manipulation on Stepped Substrate
H. Babahosseini, S.H. Mahboobi and
A. Meghdari
Sharif Univ. of Technol., Iran

19D-10-74
Fabrication of Nano Channels with High
Aspect Ratio on Silicon Substrate by Local FIB
Implantation and DRIE
J. Han, T.-G. Kim, B.-K. Min and S.J. Lee
Yonsei Univ., Korea
19D-10-77
Precision Measurement of Sub 50 nm
Linewidth by Stitching Double-Tilt Images
S.P. Pan, H.C. Liou and J.R. Chen
Industrial Technol. Res. Inst., Taiwan

19D-10-76
Uncertainty
Analysison
Precision
Measurement for Polystyrene Particle Sizes
using Dynamic Light Scattering
S.P. Pan 1,2, H.F. Weng 2, C.M. Lin 2 and
T.S. Liu 1
1 Natl. Chiao Tung Univ. and 2 Industrial
Technol. Res. Inst., Taiwan
19D-10-149L
Production of Nano-Particles Created with
Several Materials for Labeling of Biological
Molecules
H. Kim 1, H. Takei 1,2 and K. Yasuda 1,3
1 Kanagawa Academy of Sci. and Technol., 2.
Toyo Univ. and 3 Tokyo Medical and Dental
Univ., Japan

19D-10-78
Selective Adhesion of Living Cells on
Patterned Resist Substrate
N. Shimamoto 1,2,3, K. Matsuki 3,4,
R. Harigai 3,4, N. Yoshino 3,4, Y. Edagawa
3,4, N. Takeda 3, T. Ueda 1,2, K. Ijiro 1,2 and
Y. Osada 2
1 Hokkaido Univ., 2 RIKEN 3 Waseda Univ.
and 4 Waseda Inst. of Advanced Study, Japan
Nanoimprint, Nanoprint and Rising Lithography
19D-10-79
19D-10-80
Viscosity Characteristics of Spin-Coated UV A Photo-Polymerization Resist for
Nanoimprint Resin
Nanoimprint Lithography
H. Atobe 1,2,3, H. Hiroshima 1,3 andC.-C. Wu, S.L.-C. Hsu and W.-C. Liao
Q. Wang 1,3
Natl. Cheng Kung Univ., Taiwan
1 AIST, 2 Tokyo Univ. of Sci. and 3 CREST-JST, Japan

UV

19D-10-82
In-Situ Monitoring of Pattern Filling and
Residual Layer Thickness in Nano-Imprint
Lithography by Surface Plasmon Resonance
H. Hocheng 1, W.-H. Hsu 1, H.-H. Lin 2,
C.-H. Lee 2 and J.-T. Shy 1
1 Natl. Tsing Hua Univ. and 2 ITRI, Taiwan

19D-10-83
Efficiency Improvement of OLED with
Gravure Printed Bi-Layer Structure of
MEH-PPV and Rubrene
A. Kim, H. Lee, J. Lee, S.M. Cho and H. Chae
Sungkyunkwan Univ., Korea

19D-10-85
Microimprint using Inorganic-Organic Hybrid
Material by the Sol-Gel Method
K.-Y. Lu 1, W.-H. Yang 2, T.-H. Chou 2,
T.-M. Chen 2 and J.-C. Hwang 1
1 Yuan-Ze Univ. and 2 ITRI, Taiwan

19D-10-86
Room-Temperature
Nanoimprint
using
Liquid-Phase HSQ with h-PDMS Mold
Y. Kang 1,2, M. Okada 1,2,3, C. Minari 1,
K. Kanda 1,2, Y. Haruyama 1,2 and
S. Matsui 1,2
1 Univ. of Hyogo, 2 CREST-JST and 3 JSPS,Japan
19D-10-89
Impact of Mold Side Wall Profile on
Demolding Characteristics
K. Kubo 1, Y. Watanabe 1, J. Sakamoto 1,
H. Kawata 2, M. Yasuda 1,2 and Y. Hirai 1,2
1 Osaka Pref. Univ. and 2 CREST-JST, Japan

19D-10-88
In-Situ Error Estimation of Microstructure
Patterning on Glass Substrate by Imprinting
Process
L.K. Chen, Y.M. Hung, and C.K. Sung
Natl. Tsing Hua Univ., Taiwan
19D-10-151L
Nanoimprint using the Mold of Crosslinked
PTFE Fabricated by Focused Ion Beam
T. Takahashi 1, N. Fukutake 1, Y. Takasawa 1,
T. Gowa 1, T. Tatsumi 1, T. Sasaki 1,
A. Oshima 2, S. Tagawa 1,2, and M. Washio 1
1 Waseda Univ. and 2 Osaka Univ., Japan- 14 -

19D-10-150L
High-Sensitive Charge Detection using
Anti-Symmetric Vibration in Coupled
Micromechanical Resonators
N. Kitajima 1,2, H. Okamoto 1, T. Kamada 1,3,
K.Onomitsu 1, S. Warisawa 2, S. Ishihara 2,
and H. Yamaguchi 1,3
1 NTT, 2 Univ. of Tokyo and 3 Tohoku Univ.,
Japan
19D-10-81
The Numerical Simulation of Glass Imprinting
for Molding Temperature Prediction
M. Yasui 1, M. Arai 2, H. Ito 2, T. Ino 2,
M. Takahashi 3, S. Kaneko 1, Y. Hirabayashi 1
and R. Maeda 3
1 Kanagawa Industrial Technol. Ctr., 2 Shinshu
Univ. and 3 AIST, Japan
19D-10-84
Alignment Control of Photoreactive Polymer
Liquid Crystal by Thermal Nanoimprint
M. Okada 1,3, S. Manabe 1, M. Kondo 1, H. Ono
2, A. Emoto 2, Y. Haruyama 1, K. Kanda 1,
K. Kuramoto 1, N. Kawatsuki 1 and S. Matsui 1
1 Univ. of Hyogo, 2 Nagaoka Univ. of Technol.
and 3 JSPS, Japan
19D-10-87
Influence of Recoating a Silica Surface with
Antisticking Layers formed from Fluoroalkyl-Containing Trimethoxysilane Derivatives by
Chemical Vapor Surface Modification
A. Kohno 1,2, N. Sakai 3, S. Matsui 2,4 and
M. Nakagawa 1,2
1 Tohoku Univ., 2CREST-JST, 3 Toyo Gosei
and 4 Univ. of Hyogo, Japan
19D-10-90
Enhanced Transmittance of Fresnel Lens forConcentrated Photovoltaic Device using
Nano-Imprint Lithography
K.-S. Han, J.-H. Shin and H. Lee
Korea Univ., Korea

Bio MEMS, Lab on a Chip
19D-10-91
Cell Movement and Actindistribution of Lung
Cancer Cells under Electric Field
C.-W. Huang 1,2, J.-Y. Cheng 2,3,4,
M.-H. Yen 1,2, C.-Y. Huang 2, C.-H. Lee 2,3
and T.-H. Young 1
1 Natl. Taiwan Univ., 2 Academia Sinica, 3Natl. Yang-Ming Univ. and 4 Natl. Taiwan
Ocean Univ., Taiwan
19D-10-94
Immunoassay
using
Antibody-Bound
Poly-Tetrafluoroethylene
Capillary-Bundle
Structure for Environmental Analysis
Y. Ukita 1,2, S. Kondo 1, C. Kataoka 3,
M. Takeo 1, S. Negoro 1 and Y. Utsumi 1
1 Univ.of Hyogo, 2 JSPS and 3 Carbuncle
Bio-Scientific LLC., Japan
19D-10-97
In-Situ Detection of ATP released from
Reactive Oxygen Species stimulated HeLa
Cells using Silicon Nanowire FETs
Y.-J. Huang , C.-C. Chen and J.-T. Sheu
Natl. Chiao Tung Univ., Taiwan

19D-10-100
Nanoimprint Lithography-Based Flexible
Photonic Crystal for Label-Free Biosensing
T. Endo 1, S. Ozawa 2, N. Okuda 2,
Y. Yanagida 1, S. Tanaka 2 and T. Hatsuzawa 1
1 Tokyo Inst. of Technol. and 2 SCIVAX,Japan
Microsystem Technology and MEMS
19D-10-101
NEXAFS Studies on VUV and Oxygen
Plasma Pretreated PMMA Surfaces for
Investigation of Low-Temperature Bonding
Mechanisms
H. Shinohara, J. Mizuno and S. Shoji
Waseda Univ., Japan
19D-10-104
Remote Atmosphere Pressure Monomer
Plasma Treatment Technique for Selected Area
Surface Energy Control
A.R. Han 1, H.J. Lee 1, N.K. Lee 1, J.H. Song
1 and S.-H. Kim 2
1 Korea Inst. of Industrial Technol. and 2
Applied Plasma, Korea
19D-10-107
Pressure and Cavity-Volume Effects ofConvective Tilt Sensor
D.W. Jung, J.C. Choi and S.H. Kong
Kyungpook Natl. Univ., Korea
19D-10-110
The Development of SAW Gyroscope Basedon Progressive Wave
H. Oh, K. Lee and S. Yang
Ajou Univ., Korea
19D-10-113
BZ Oscillation of the Patterned Gel induced by
DC Voltage Stimulation
Y. Shiraki, J. Nishikawa and S. Shingubara
Kansai Univ., Japan

19D-10-153L
MEMS-FET Hybrid Switch for Energy
Scavenging System
S.M. Kang, K.J. Park, J.W. Park, Y.-R. Kim,
S.-C. Ko, C.-W. Baek and H.S. Kim
Chung-Ang Univ., Korea

19D-10-92
Fabrication of Electrodes for Multiplex NervalInterface
M. Kato 1, E. Blasius 2, Y. Ukita 1,3,
K. Mabuchi 4 and Y. Utsumi 1
1 Univ. of Hyogo, Japan, 2 Univ. Karlsruhe,
Germany, 3 JSPS and 4 Univ. of Tokyo, Japan

19D-10-93
Particle Capture in a Droplet by LDEP
C.-H. Chen 1, S.-L. Tsai 1, L.-S. Jang 1 andY.-C. Hsu 2
1 Natl. Cheng Kung Univ. and 2 Southern
Taiwan Univ., Taiwan

19D-10-95
The Effect of Intermittent MechanicalStimulation on Hydrogel Scaffold
S.K. Choi 1, J.H. Park 2, S.-J. Lee 3, I.H. Lee
1, S.S. Kang 1 and T.J. Ko 4
1 Chungbuk Natl. Univ., 2 POSTECH, 3
Gyeongbuk Hybrid Technol. Inst. and 4
Yeungnam Univ., Korea
19D-10-98
Micro Droplet PCR: Development ofHigh-Speed Real-Time PCR System for Rapid
and Precise Nucleotide Recognition
H. Terazono 1,2, H. Takei 1,2,3 andK. Yasuda 1,2
1 Kanagawa Academy of Sci. and Technol., 2
Tokyo Medical and Dental Univ. and 3 Toyo
Univ., Japan

19D-10-96
Fabrication of Enzyme Electrodes for
Glucose/O2 Biofuel Cell
T. Miyake 1,2, M. Oike 1, S. Yoshino 1,
Y. Yatagawa 1, K. Haneda 1, H. Kaji 1,2 andM. Nishizawa 1,2
1 Tohoku Univ. and 2 JST, Japan

19D-10-102
Vacuum Ultraviolet (VUV) Treatment for
Au-Au Flip-Chip Bonding
N. Unami 1, K. Sakuma 1,2, J. Mizuno 1 and
S. Shoji 1
1 Waseda Univ. and 2 IBM Tokyo Res. Lab.,Japan
19D-10-105
Effects of Adhesive Contact Area on Adhesive
Bend Strength Between Micro-Sized SU-8
Columnar Specimens and a Si Substrate
C. Ishiyama, A. Shibata, M. Sone and Y. HigoTokyo Inst. of Technol., Japan

19D-10 -103
Evaluation of Resonance Characteristics
Change of Silicon Resonators due to Surface
Treatment
H. Shimizu, J.-J. Delaunay, R. Kometani,
S. Warisawa and S. Ishihara
Univ. of Tokyo, Japan

19D-10-108
Fabrication and Characteristics of MEMS
-Based Gas Flow Sensor
J.C. Choi and S.H. Kong
Kyungpook Natl. Univ., Korea
19D-10-111
High-Q
Micromachined
Silicon
Disk
Resonator transduced by Piezoelectric Lead
Zirconate Titanate Thin Film
J. Lu 1,2, T. Suga 1, Y. Zhang 2, T. Itoh 2,
R. Maeda 2 and T. Mihara 3
1 Univ. of Tokyo, 2 AIST and 3 Olympus, Japan
19D-10-114
A Concept of Micro-Column Electron Beam
Microscope using a Field Emitter Array
Built-In Electrostatics Lens
A. Koike 1, T. Tagami 1, Y. Takagi 1,
M. Nagao 2, T. Yoshida 2, S. Kanemaru 2,
T. Aoki 1, H. Mimura 1 and Y. Neo 1
1 Shizuoka Univ. and 2 AIST, Japan
19D-10-154L
Fabrication of Nano-Pillar Array using p-Type
Silicon for Solar Cell Application
H.H. Ryu 1, J.H. Kim 2 and S.H. Kong 1
1 Kyungpook National Univ. and 2 DGIST,
Korea- 15 -

19D-10-99
Microfluidic Devices integrated with CMOSMEMS Impedance Sensor
C.-C. Wu 1, C.-F. Liu 1, L.-S. Jang 1 andY.-C. Hsu 2
1 Natl. Cheng Kung Univ. and 2 Southern
Taiwan Univ., Taiwan

19D-10-106
Simple and Low Cost Fabrication of
Capacitance Sensors
T. Kasahara 1, M. Mizushima 2, H. Shinohara
1, T. Obata 3, T. Futakuchi 3, J. Mizuno 1 and
S. Shoji 1
1 Waseda Univ., 2 Oga and 3 Toyama
Industrial Technol., Japan
19D-10-109
Photonic Crystal Filter integrated with
Photodiodes
W.Y. Chiu, Y.H. Wu, Y.J. Chan, C.-H. Hou,
H.-T. Chien and C.-C. Chen
Natl. Central Univ., Taiwan
19D-10-112
2.5 GHz Low insertion Loss MEMS Hybrid
Phase Shifters
H. Ado, T. Furutsuka and K. Suzuki
Ritsumeikan Univ., Japan
19D-10-152L
Characterization of Two Beam-Shaped
Cantilevers Coupled with a Micromechanical
Element
D.F. Wang 1, J. Feng 2, T. Ono 2 andM. Esashi 2
1 Ibaraki Univ. and 2 Tohoku Univ., JapanMNC 2009 has received financial assistance from the following organizations and companies as ofNovember 9, 2009.

Sapporo City
The Association of Super-Advanced Electronics Technologies (ASET)
Foundation for Promotion of Material Science and Technology of Japan
Canon Inc.
DAICEL CHEMICAL INDUSTRIES, LTD.
Fujitsu Limited
Hitachi, Ltd.
HOYA CORPORATION
Litho Tech Japan Corporation
NEC Corporation
NEC Electronics Corporation
Nippon Telegraphy and Telephone Corporation (NTT)Renesas Technology Corp
Semiconductor Leading Edge Technologies, Inc.
Sony Corporation
Tokyo Electron Limited
TOSHIBA Corporation
ULVAC, Inc.

- 16 -