MNC 2010 (November 9-12, Rihga Royal Hotel Kokura) Schedule
Tuesday, November 9
Room C
13:30-16:50 MNC 2010 Technical Seminar in Japanese''Graphen''
17:00-19:00 Get Together Party

Wednesday, November 10
Royal Holl
10P-1:Opening Session 9:30-12:20
Opening Remark and 2009 Award Presentation
F. Cerrina Tribute
M. Esashi, Tohoku Univ., Japan (Plenary)
M. Roukes, Kavli Nanoscience Inst. California Inst. of Technol., USA (Plenary)
S. Sivakumar, INTEL, USA (Plenary)
Lunch
Room A
Room B
10A-2: 13:45-15:40
10B-2: 13:45-15:25
DUV, EUV Lithography and Metrology
Nanomaterials I■Registration Desk (3FLobby)
November 9, 12:30 - 16:30 16:30- 18:30
November 10, 8:30 - 18:00
November 11, 8:30 - 19:10
November 12, 8:30 - 15:30

Room C
10C-2: 13:45-15:35
Microsystem Technology and MEMS I

10A-2: 15:40-15:55, Author's Interview
Lobby
Room A
10A-3: 16:05-17:40
Electron- and Ion-Beam Lithography

Coffee BreakRoom B
10B-3: 15:55-17:35
Nanomaterials II

Room C
10C-3: 16:05-17:45
Microsystem Technology and MEMS II

10A-3: 17:40-17:55, Author's Interview

10B-2, 3: 17:35-17:50, Author's Interview

10C-2, 3: 17:45-18:00, Author's Interview

Thursday, November 11
Room A
11A-4: 9:30-10:50
Resist Materials and Processing

Room B
11B-4: 9:00-10:35
New Functional Nanodevices

Room C
11C-4: 9:00-10:30
Bio MEMS, Lab on a Chip I

11A-4: 10:50-11:05, Author's Interview
Lobby
Room A
11A-5: 11:20-12:25
Symp. A. Green Lithography I

Coffee BreakRoom B
11B-5: 10:55-12:35
Electron Nanodevices

11A-6: 14:10-16:10
Symp. A. Green Lithography II

11B-4, 5,: 12:35-12:50, Author's Interview
Lunch
11B-6: 13:35-15:05
Nanofabrication I

11A-5, 6: 16:10-16:25, Author's Interview

11B-7: 15:15-16:15
Nanofabrication II

Room C
11C-5: 11:00-12:40
Bio MEMS, Lab on a Chip II
11C-4, 5: 12:40-12:55, Author's Interview
11C-6: 14:10-16:20
Nano Tool

Break
11C-6: 16:00-16:15, Author's Interview

11B-6, 7: 16:15-16:30, Author's Interview
Room D
11D-8: 16:30-18:30 Poster Session I
DUV, EUV Lithography and Metrology, Resist Materials and Processing, Nanocarbon, Nanodevices, Nanofabrication, Nanomaterials,
Nanoimprint, Nanoprint and Rising Lithography, Bio MEMS, Lab on a Chip and Microsystem Technology and MEMS
Room E
18:40-20:40 Banquet

Friday, November 12
Room A

Room B

12A-9: 9:00-11:00
Symp. A. Green Lithography III

12B-9: 9:00-10:40
Nanocarbon I

Room A
12A-10: 11:30-12:30
Symp. A. Green Lithography IV

Coffee BreakRoom B
12B-10: 11:10-13:00
Nanocarbon II

Room C
12C-9: 9:00-10:40
Nanoimprint, Nanoprint and Rising Lithography I

Lobby

12A-9, 10: 12:30-12:45, Author's Interview

12B-9, 10: 13:00-13:15, Author's Interview
Lunch
Room D

Room C
12C-10: 11:10-12:50
Nanoimprint, Nanoprint and Rising Lithography II
12C-9, 10: 12:50-13:05, Author's Interview

12D-11: 14:00-16:00 Poster Session II
DUV, EUV Lithography and Metrology, Electron- and Ion-Beam Lithography, Resist Materials and Processing,
Nanocarbon, Nanodevices, Nanofabrication, Nanomaterials, Nano-Tool, Nanoimprint, Nanoprint and Rising Lithography,
Bio MEMS, Lab on a Chip and Microsystem Technology and MEMS

Wednesday, November 10
Room P (4F)
10P-1:Plenary Session
Chairpersons:T. Itani (Selete), S. Akita (Osaka Pref. Univ.) and T. Kozawa (Osaka Univ.)
9:30-9:45
Opening Remark: T. Asano (Kyushu Univ.) and Award Presentation: T. Meguro (Tokyo Univ. of Sci.) and T. Itani (Selete)
Outstanding Paper, Most Impressive Presentation and Young Author’s Award
10P-1-1:
9:45-9:55
To the Memory of Prof. Franco Cerrina (Invited)
S. Ishihara, Univ. of Tokyo, Japan
9:55-10:00
Announcement from Committee: H. Yamaguchi (NTT)
10P-1-2:
10:00-10:40
Prospect of Micro/Nanotechnology for Fusion in Microelectronics (Plenary)
M. Esashi, Tohoku Univ., Japan
Lobby (3F)
Coffee BreakRoom P (4F)
10P-1-3:
11:00-11:40
Large-Scale Integration of Nanosystem (Plenary)
M. Roukes, Kavli Nanoscience Inst. California Inst. of Technol., USA
10P-1-4:
11:40-12:20
Managing the Technical and Economic Challenges of Next-Generation Lithography (Plenary)
S. Sivakumar, INTEL, USA
LUNCH
Room A (3F)
Room B (3F)

Room C (3F)

10A-2: DUV, EUV Lithography andMetrology
Chairpersons:
S. Sivakumar (Intel)
T. Sato (Toshiba)

10B-2: Nanomaterials I
Chairpersons:T. Chikyo (NIMS)
T. Ishida (AIST)

10C-2: Microsystem Technology and
MEMS I
Chairpersons:H. Takao (Kagawa Univ.)
M. Sohgawa (Osaka Univ.)

10A-2-1
13:45
EUV Lithography: Status and Challenges(Special Keynote Lecture)

10B-2-1
13:45
Bipolar Resistive Switching Behavior in theRu/Y2O3/TaN Nonvolatile Memory Device

10C-2-1
13:45
Human Activity Monitoring by MEMS
Sensing Fusion (Invited)

T.-M. Pan, Y.-H. Shao, W.-Z. Li, K.-M. Chen,
H. Chiang and C.-H. Lu, Chang Gung Univ.,
TaiwanK. Maenaka 1,2, 1 JST-ERATO and 2 Univ. of
Hyogo, Japan

10B-2-2
14:05
A High-k Tb2TiO5 Nanocrystal Memory for
Nonvolatile Memory Applications

10C-2-2
14:15
The Significant Structure Factors for
Non-linearity and Sensitivity Performanceof Very Low Pressure Sensor

I. Mori, Selete, Japan

10A-2-2
14:20
In-situContamination
Thickness
Measurement by Novel Resist Evaluation
System at NewSUBARU
T. Watanabe 1, N. Matsuda 1, T. Harada 1,
H. Kinoshita 1, H. Oizumi 2 and T. Itani 2, 1 Univ.
of Hyogo and 2 Selete, Japan

10A-2-3
14:40
Optimizing Photon Sieves for High NA
Extreme Ultraviolet Microscopy
C. Zhou 1 and M. Cheng 2, 1 Texas A&M Univ.
and 2 Shanghai Academy of Sci. and Technol.,
China

10A-2-4
15:00
Feasibility Study of a Mask level Correction
Strategy for EUV Flare Compensation
K. Song 1, J. Lee 1, Y. Kim 2, C. Kim 2, O. Han 2
and O. Kim 1, 1 POSTECH and2 Hynix Semiconductor, Korea

Y.-B. Peng, F.-. Chen, J.-S. Jung, and T.-M. Pan
Chang Gung Univ., Taiwan

Y.-C. Lu 1, J. Hsieh 1, W.-R. Cheng 2, C.-F. Hu 2
and W. Fang 2, 1 Asia Pacific Microsystems and
2 National Tsing Hua Univ., Taiwan

10B-2-3
14:25
Metal-Oxide-High-k-Oxide-Silicon Memory
Structure with a Tb2O3 Charge Trapping
Layer

10C-2-3
14:35
Distribution Measurement of Normal andShear Forces by using Tactile Sensor
Array with Micro-cantilevers

T.-M. Pan, F.-H. Chen, K.-Y. Chang, J.-S. Jungand W.-Z. Li, Chang Gung Univ., Taiwan

D. Hirashima 1, T. Uematsu 1, M. Sohgawa 1,
W. Mito 2, T. Kanashima 2, M. Okuyama 1 and
H. Noma 2, 1 Osaka Univ. and 2 ART, Japan

10B-2-4
14:45
Ferromagnetic
MnAs
Nanocluster
Composites Position-controlled on GaAs
(111)B Substrates toward Lateral Magnetoresistive Devices

10C-2-4
15:55
MEMS Resonator uilizing Torsional-toTransverse Vibration Conversion

K. Komagata 1, S. Hara 1,2, S. Ito 1 and T. Fukui
1, 1 Hokkaido Univ. and 2 PRESTO-JST, Japan-1-

M. Kiso 1, M. Okada 1, A. Tamano 1, H. Fujiura
1, H. Miyauchi 1, K. Niki 1, H. Tanigawa 2 andK. Suzuki 2, 1 Sanyo Electric and 2 Ritsumeikan
Univ., Japan

10A-2-5
15:20
Critical Dimension Evaluation of an EUV
Mask utilizing the Coherent EUV
Scatterometry Microscope
T. Harada 1,2, M. Nakasuji 1,2, M. Tada 1,2,
T. Watanabe 1,2 and H. Kinoshita 1,2, 1 Univ. of
Hyogo and 2 JST-CREST, Japan

10B-2-5
15:05
Preparationof
SnO/ZnO
Nano
Heterojunction
Arraysandits
Optoelectronic
Response
to
UV
Illuminations

10C-2-5
15:15
A Silicon Beam MEMS Resonator with a
Sliding ElectrodeT. Oka, T. Ishino, H. Tanigawa and K. Suzuki,
Ritsumeikan Univ., Japan

F.-S. Tsai, S.-J. Wang, Y.-C. Tu, Y.-W. Hsu,
C.-Y. Kuo and R.-M. Ko, National Cheng Kung
Univ., Taiwan

Lobby (3F)
Coffee BreakRoom A (3F)

Room B (3F)

Room C (3F)

10A-3: Electron- and Ion-Beam
Lithography
Chairpersons:S. Okazaki (EUVA)
Y. Miyamoto (Tokyo Inst. of Technol.)

10B-3: Nanomaterials II
Chairpersons:T. Miyazawa (Univ. of Tokyo)

10C-3: Microsystem Technology and
MEMS II
Chairpersons:T. Ikehara (AIST)
N. Miki (Keio Univ.)

10A-3-1
16:05
Technical and Business Considerations in
Launching Multiple E-Beam Maskless
Lithography (Special Keynote Lecture)

10B-3-1
15:55
Adsorption
Process
andElectron
Transport of Redox-active Ru Complex
Molecular Layer with Phosphonic Acids on
ITO Surface

10C-3-1
16:05
Completely Freeform Fabrication ofThree-dimensional Carbon Microstructures
by Two-photon Photopolymerization

B. Lin, TSMC, Taiwan

T. Ishida 1, K. Terada 1, K. Kanaizuka 2 and
M. Haga 2, 1 AIST and 2 Chuo Univ., Japan

Y. Daicho 1,2, T. Murakami 1, T. Hagiwara 2 and
S. Maruo 1, 1 Yokohama National Univ. and 2
CMET, Japan

10A-3-2
16:40
The ''MAGIC'' Initiative: Status on the
Maturity of Process Technology ofEuropean Multi-beam Technologies

10B-3-2
16:15
Aqueous
ColloidofIsoflavonoid
Compounds fabricated by Laser Ablationin Water

10C-3-2
16:25
The Field Emission Ion Source using a
Carbon Nanotube Array for Micro
Time-of-flight Mass Spectrometer

B. Icard 1, L. Pain 1, M. Martin 1, D. Rio 1,
C. Constancias 1, B. Kampherbeek 2,
P. Veltman 2, C. Klein 3, H. Loeschner 3,
E. Platzgummer 3, C. Hohle 4, P. Jaschinsky 4,
M. Irmscher 5 and H. Sailer 5, 1 CEA-LETI,France, 2 MAPPER Lithography, The
Netherlands, 3 IMS Nanofabrication, Austria, 4Fraunhofer CNT, Germany and 5 Inst. forMicroelectronics Stuttgart, Germany

T. Asahi and T. Fujimura, Ehime Univ., JapanK. Han 1, Y. Lee 1, D. Jun 1, S. Lee 1, K.W. Jung
2 and S.S. Yang 1, 1 Ajou Univ. and 2
Wonkwang Univ., Korea

10A-3-3
17:00
Data Preparation Solution for E-beamMultiple Pass Exposure: ReachingSub-22nm Nodes with a Tool dedicated to
45nm

10B-3-3
16:35
Ordered Arrays of SpFeMn(C2O4)3Antiferromagnetic
and
Ge:Mn
Ferromagnetic Nanowires

10C-3-3
16:45
Residue Removal with HF Vapor for
MEMS Fabrication using Resinous
Sacrificial Layers

R. Morgunov 1, F. Mushenok 1, N. Sanina 1,
S. Aldoshin 1 and Y. Tanimoto 2, 1 Russian
Academy of Sci, Russia and 2 Osaka-Ohtani
Univ., Japan

K. Takagahara, K. Kuwabara, T. Sakata and
Y. Sato, NTT, Japan

10B-3-4
16:55
Vertically-Aligned ZnO Nanowire Arrays
and Their Application as UV Sensors

10C-3-4
17:05
Direct Bonding of LSI Chips to Flexible
Substrate using Compliant Bump

W. Mai 1,2, J. Zhou 1, P. Gao 1, C. Lao 1 and
Z.L. Wang 1, 1 Georgia Inst. of Technol., USA
and 2 Jinan Univ., China

T. Shuto 1, N. Watanabe 1, A. Ikeda 1,
T. Higashimachi 2 and T. Asano 1,
1 Kyushu Univ. and 2 Sojo Univ., Japan

10B-3-5
17:15
In Situ High-resolution Transmission
Electron Microscopy of Electromigration in
Platinum Nanocontacts

10C-3-5
17:25
Adhesion Adjustable PDMS Stamp basedon Micro-balloon Actuator Array forTransfer Printing Process of Microdevices

S. Kodama and T. Kizuka, Univ. of Tsukuba,
Japan

C.J. Park 1, Y.H. Seo 1, B.H. Kim 1, K.-S. Kim 2
and J.-H. Kim 2, 1 Kangwon National Univ. and
2 KIMM, Korea

10B-2, 3: 17:35-17:50, Author's Interview

10C-2, 3: 17:45-18:05, Author's Interview

L. Martin 1, S. Manakli 2, S. Bayle 2, K.-H. Choi3, M. Gutsch 3, L. Pain 1, 1 CEA-LETI, France,
2 ASELTA Nanographics and 3 Fraunhofer CNT,
Germany

10A-3-4
17:20
Impacts of Electron Proximity Effects on
Patterning
Fidelity
Limitation
forElectron-beam–direct-write Lithography
C.-H. Liu, P.C.W. Ng, Y.-T. Shen and K.-Y. Tsai,National Taiwan Univ., Taiwan

10A-3-5
17:20
Charge Modeling for Metal Layer on
Insulating Substrate
N. Okai, T. Yano and Y. Sohda, Hitachi, Japan

10A-2,3: 17:40-17:55, Author's Interview-2-Thursday, November 11
Room A (3F)

Room B (3F)

Room C (3F)

11A-4: Resist Materials and Processing
Chairpersons:K. Nozaki (Fujitsu)
T. Hirayama (Tokyo Ohka)

11B-4: New Functional Nanodevices
Chairpersons:Y. Ohno (Nagoya Univ.)
K. Nishiguchi (NTT)

11C-4: Bio MEMS, Lab on a Chip I
Chairpersons:Y. Murakami (Hiroshima Univ.)
Y. Miyahara (NIMS)

11A-4-1
9:00

11B-4-1
9:00
Nanogenerator and Piezotronics (Special
Keynote Lecture)

11C-4-1
9:00
Applications of Lab-on-a-Chip Devices in
Biotechnology, Medicine and Clinical
Diagnosis (Invited)

Chemical Reaction Kinetics and Latent Image
FormationinChemically
Amplified
Calix[4]resorcinarene Molecular Resists: a
Neutron Reflectivity Study (Invited)
V.M. Prabhu 1, S. Kang 1, J. Kline 1,
P. Bonnesen 2, C. Tarrio 1, W.-l. Wu 1, J. Sha 3,
C.K. Ober 3, 1 Natl. Inst. of Standards andTechnol., 2 Oak Ridge Natl. Lab. and 3 Cornell
Univ., USA

11A-4-2
9:30
In situ Characterization
DissolutionofPolymer

J.J. Santillan and T. Itani, Selete, Japan

Z.L. Wang
Georgia Inst. of Technol.,USA

11B-4-2
9:35
Non-volatile Resistive Memory Device basedon
Poly(3,4ethylenedioxythiophene):
Poly(styrene sulfonate) Thin Film forTransparent and Flexible Application
J. Lee and O. Kim, POSTECH, Korea

11A-4-3
9:50
Methods for
Mitigation

Line

Width

Roughness

K.S. Mayya, K. Yool, H.-W. Kim, H. Kim and
H.-K. Cho, Samsung Electronics, Korea

11B-4-3
9:55
Novel Light-transmitting Nano-meshed
MetalElectrodefabricatedbySelf-assembled
Block
Copolymer
Lithography
E. Tsutsumi, R. Kitagawa, K. Masunaga,
T. Nakanishi, A. Fujimoto and K. Asakawa,Toshiba, Japan

11A-4-4
10:10
Synthesis and Application of Positive-type
Molecular Resist based on Ladder Cyclic
Oligomer (Noriapy) containing Photodegradable Groups
H. Seki 1, H. Kudo 1, T. Nishikubo 1,
K. Maruyama 2, T. Kai 2, T. Shimokawa 3,
H. Oizumi 3 and T. Itani 3, 1 Kanagawa Univ.,
2 JSR and 3 Selete, Japan

11B-4-4
10:15
Development of Hybrid Photovoltaic Cell
based on CuInS2 Quantum Dots blended
in an Organic Photoactive Layer
M. Nam 1, S. Lee 1, G. Cai 2, S. Han 2, S. Kim 1
and K. Lee 1, 1 Ajou Univ. and 2 Hanyang Univ.,
Korea

M. Tokeshi
Nagoya Univ., Japan

11C-4-2
9:30
High Speed Generation of Uniform
Femtoliter Volume Droplets using Cascade
Multi-stage Separation Microfluidic Device
M. Fujii, K. Kawai, D.H. Yoon and S. Shoji,
Waseda Univ., Japan

11C-4-3
9:50
Directional Passive Guidance of Fibroblast
Cells Migration using Consecutive
Triangular Micropatterns
E.D. Han, Y.H. Seo and B.H. Kim, Kangwon
National Univ., Korea

11C-4-4
10:10
Inkjet Printing for Fabrication
Lab-on-Paper on Cellulose Membraneof

A. Apilux 1,2, Y. Ukita 1, M. Chikae 1, K. Kawai
1, O. Chailapakul 2 and Y. Takamura 1, 1 JAIST,Japan and 2 Chulalongkorn Univ., Thailand

11A-4-5
10:30
Development of Molecular Resists basedon Fullerene Derivatives for EUV
Lithography
H. Oizumi 1, K. Tanaka 2, K. Kawakami 3 and
T. Itani 1, 1 Selete, 2 Mitsubishi Chemical and 3
Mitsubishi Chemical Group Sci. and Technol.
Res. Ctr, Japan

11A-4: 10:50-11:05, Author's Interview
Lobby (3F)
Coffee BreakRoom A (3F)
11A-5: Symp. A. Green Lithography I
Chairpersons:
H. Futatsuya (Fujitsu Microelectronics)
H. Mohri (DNP)
11A-5-0
11:20
Symposium Opening Remark
S. Nagahara (Renesas Electronics)

Room B (3F)

Room C (3F)

11B-5: Electron Nanodevices
Chairpersons:
H. Ikeda (Shizuoka Univ.)
N. Banno (NEC)
11B-5-1
10:55
Fabrication of a Nanowire-based Flip-fop
Circuit using Gate-controlled GaAs
Three-branch Nanowire Junctions

11C-5: Bio MEMS, Lab on a Chip II
Chairpersons:H. Takei (Toyo Univ.)
Y. Takamura (JAIST)
11C-5-1
11:00
A New Investigation of Automatic
Genechip Analyzer Device with Weighted
Enzymatic Chip Array for Gene Analysis
Applications

H. Shibata 1, Y. Shiratori 1 and S. Kasai 1,2,
1 Hokkaido Univ. and 2 PRESTO-JST, Japan-3-

S.K. Hsiung 1, C.H. Lee 2, T.L. Cheng 3,
S.W. Lu 1, C.H. Wu 1, M.S. Chang 1, Y.F. Chen
4, D.A. Tsao 1, H.H. Chiu 1, H.J. Chang 1 and
S.R. Lin 1, 1 Fooyin Univ., 2 National
SunYat-Sen Univ., 3 Kaohsiung Medical Univ.
and 4 Gene Target Technol., Taiwan

11A-5-1
11:25
Lithography – Green
Greener (Invited)andGetting

H.J. Levinson , Global Foundries, USA

11B-5-2
11:15
Fast Sensing using Single-electron
Stochastic Resonance in Si Nano-Wire
Transistors

11C-5-2
11:20
Effect of Mechanical Stimuli on Intracellular
Calcium Expression in Dynamic Single
Cell

K. Nishiguchi and A. Fujiwara, NTT, Japan

T.K. Kim and O.C. Jeong, Inje Univ., Korea

11B-5-3
11:35
Biasing Effects in MOSFET Based Charge
Transfer Devices

11C-5-3
11:40
Noninvasive and Real-time Monitoring ofInvasion Process of Tumor Cells using
Vascular Endothelial Cell-based Field
Effect Transistor

V. Singh, H. Inokawa and H. Satoh, Shizuoka
Univ., Japan

Y. Matsuse 1, T. Sakata 1 and Y. Miyahara 2,
1 Univ. of Tokyo and 2 NIMS, Japan

11A-5-2
11:55
Lithography Strategy for 2x Memory
Device and beyond Aiming at
Cost-effectiveness(Invited)
S. Kyoh, Toshiba, Japan

11B-5-4
11:55
Multi-fin Poly-Si TFTs fabricated with Nano
Imprint Technology

11C-5-4
12:00
Label-free Aptamer-Based Immunosensors
using Graphene Field-effect Transistors

H.J.H. Chen 1, J.-R. Jhang 1, C.-J. Huang 1,
Y.-F. Ciou 1, S.-Z. Chen 2 and J.-C. Huang 2, 1
National Chi Nan Univ. and 2 National Tsing Hua
Univ., Taiwan

Y. Ohno, K. Maehashi and K. Matsumoto, Osaka
Univ., Japan

11B-5-5
12:15
Characterization of New Charge Trapping
Nonvolatile Memory Device using Gate
Injection Switching

11C-5-5
12:20
Supersensitive Detection of Explosives by''NanoSniffer'' Arrays

Y. Seo 1, H.M. An 1, H.D. Kim 1, I.R. Hwang 2,
S.H. Hong 2, B.H. Park 2 and T.G. Kim 1, 1
Korea Univ. and 2 Konkuk Univ., Korea

11A-6: Symp. A. Green Lithography II
Chairpersons:
J. Miyazaki (ASML)
T. Yahiro (Nikon)
11A-6-1
14:10
Environmentally-friendly
Immersion
Scanner: NSR-S620D (Invited)
M. Imai, H. Suzuki and H. Kohno
Nikon, Japan

Y. Engel, R. Elnathan, A. Pevzner, G. Davidi,
E. Flexer and F. Patolsky, Tel -Aviv Univ., Israel

11B-4, 5: 12:35-12:50, Author's Interview
LUNCH
11B-6: Nanofabrication I
Chairpersons:M. Masahara (AIST)
T. Hasunuma (Tsukuba Univ.)

11C-4, 5: 12:40-12:55, Author's Interview

11B-6-1
13:35
Scaling Issues on Direct High-k/Si andSize Effects on Ni Silicides for
Si
Nanowires (Invited)

11C-6-1
14:10
Conformational Dynamics of Biological
Molecules Captured by High-Speed AFM(Invited)

K.Kakushima, P. Ahmet, K. Tsutsui and H. Iwai,
Tokyo Inst. of Technol., JapanT. Uchihashi and T. Ando, Kanazawa Univ.
Japan

11C-6: Nano Tool
Chairpersons:S. Akita (Osaka Pref. Univ.)
T. Uchihashi (Kanazawa Univ.)

11B-6-2
14:05
The Impact of Y2O3 Addition into TiO2 on
Electronic States and Resistive Switching
Characteristics
A. Ohta 1, Y. Goto 1, G. Wei 1, K. Makihara 1,
H. Murakami 1, S. Higashi 1, and S. Miyazaki 2,
1 Hiroshima Univ. and 2 Nagoya Univ., Japan

11A-6-2
14:40
Cost Effective Shrink with EUV Update
on ASML’s NXE Platform (Invited)

11B-6-3
14:25
Fabrication of Metal Buried Nano-cone
Structures for Single Photon Generation

C. Wagner 1, R. Peeters 1, K. Morisaki 2,
K. Go 2, and J. Miyazaki 2, 1 ASML,The
Netherlands and 2 ASML, JapanJ.-H. Huh 1,2, C. Hermannstaedter 1,
K. Akahane 3, N.A. Jahan 1, M. Wada 1,
H. Sasakura 1,2, S. Ida 1, M. Sasaki 3 andI. Suemune 1,2, 1 Hokkaido Univ. and2 JST-CREST and 3 NICT, Japan

11C-6-2
14:40
Local
Electrical
Characteristics
of
Oligothiophene Crystal Islands studied byDual-probe Atomic Force Microscopy
M. Hirose, E. Tsunemi, K. Kobayashi,
H. Yamada and K. Matsushige, Kyoto Univ.,
Japan

11B-6-4
14:45
A Study on the Surface Property ofAnti-adhesion Coating for Nanoimprint
Molds using Atmosphere Pressure Plasma
Jet System

11C-6-3
15:00
Effect of a Fluorine Surface Coating on
Vibration Characteristics of Diamond-like
Carbon Mechanical Resonator fabricatedby FIB-CVD

T.-P. An 1, J.-W. Lin 2 and C.-K. Sung 1, 1
National Tsing Hua Univ. and 2 ITRI, Taiwan

R. Kometani, S. Warisawa and S. Ishihara, Univ.
of Tokyo, Japan-4-

11A-6-3
15:10
Realizing Laser Produced Plasma EUV
Source for HVM (Invited)
J. Bonafede, Cymer Japan, Japan

11B-7: Nanofabrication I
Chairpersons:K. Takase (Nihon Univ.)
A. Kohno (Fukuoka Univ.)

11C-6-4
15:20
Displacement Measurement of Carbon
Nanotube in Liquid toward Interactive
Force Sensing of Biological Molecules
S. Sawano 1, T. Arie 1,2 and S. Akita 1,2, 1
Osaka Pref. Univ. and 2 JST-CREST, Japan

11B-7-1
15:15
Multilayered Thin Metal Films Deposition
by Sequential Operation of Nanosilicon
Electron Emitter in Metal-Salt Solutions
T. Ohta, B. Gelloz and N. Koshida, Tokyo Univ.
of Agri. & Technol., Japan

11A-6-4
15:40
Research and Development on Process
ScienceandCD
ControlinHigh-Throughput
UV
Nanoimprint(Invited)
S. Matsui 1, 5, H. Hiroshima 2, 5, Y. Hirai 3, 5
and M. Nakagawa 4,5, 1 Univ. of Hyogo, 2
AIST, 3 Osaka Pref. Univ., 4 Tohoku Univ.
and 5 JST-CREST, Japan

11B-7-2
15:35
Preparation of Ultra High Density Magnetic
Nanowire Arrays beyond 1 Tera Bit /Inch2
on Si Substrate using AAO Template
K. Aoki 1, Y. Tanaka 1, T. Terui 2, T. Shimizu 1
and S. Shingubara 1, 1 Kansai Univ. and 2
National Inst. of Inform. and Communications
Technol., Japan

11B-7-3
15:55
Orientation-controlled and Long-Rangeordering Self-assembled Nanodot Array for
Ultrahigh-density Bit Patterned Media

11C-6-5
15:40
Electrical Detection of the Resonance of a
Cantilevered Carbon Nanotube
N. Matsunaga 1, T. Arie 1,2 and S. Akita 1,2, 1
Osaka Pref. Univ. and 2 JST-CREST, Japan

11C-6-6
16:00
A New Displacement Detection Systemusing a HEMT Amplifier
Y. Oda 1,2, K. Onomitsu 1, R. Kometani 2,
S. Warisawa 2, S. Ishihara 2 and H. Yamaguchi
1, 1 NTT and 2 Univ. of Tokyo, Japan

11C-6: 16:20-16:35, Author's Interview

T. Akahane, M. Huda, T. Tamura, Y. Yin and
S. Hosaka, Gunma Univ., Japan

11A-5, 6: 16:10-16:25, Author's Interview

11B-6, 7: 16:15-16:30, Author's Interview
Room D (3F)

11D-8: 16:30-18:30 Poster Session I
DUV, EUV Lithography and Metrology
11D-8-1
Improvement of Flare Modeling and
Derivation for EUV Optics
M. Shiraishi, T. Oshino, K. Murakami and
H. Chiba, Nikon, Japan

11D-8-2
Nonlinear Behavior of Carbon Depositionon the Projection Optics Mirrors by EUV
Irradiation in the Coexistence ofHydrocarbon Gas and Water Vapor

11D-8-3
Residence Time Control of a Fine Ion
Beam Sputtered-Si Flux for Figure Error
Correction of EUVL Optics

11D-8-4
Low Energy Xe+ Ion Beam Machining ofHemi-Spherical ULE® Substrates for EUVL
Projection Optics

11D-8-5
Observations of Plasma Dynamics in a
Laser Assisted Sn Fueled Discharge
Produced Plasma EUV Source

H. Endo, S.A. Pahlovy and I. Miyamoto, Tokyo
Univ. of Sci, Japan

Q. Zhu, J. Yamada, N. Kishi, M. Watanabe,
A. Okino, K. Horioka and E. Hotta, Tokyo Inst. ofTechnol., Japan

11D-8-6
Impact of Process Effects Correction
Strategies on Critical Dimension andElectrical Characteristics Variabilities in
Extreme Ultraviolet Lithography

11D-8-7
Test Chip Application using
Lithography and its Performance

11D-8-129L
High-Throughput Low-Cost Lithography for
Fabrication of Photonic Structures:
PHABLE

M. Niibe 1, K. Koida 1,3, T. Nakayama 2,
S. Terashima 2, A. Miyake 2, H. Kubo 2, Y.
Kakutani 3 and S. Matsunari 3, T. Aoki 3 and S.
Kawata 3, 1 Univ. of Hyogo, 2 Canon and 3
Nikon, Japan

EUV

K. Tawarayama 1, Y. Nakajima 2, S. Kyoh 2,
H. Aoyama 1, K. Matsunaga 1, S. Tanaka 2 and
S. Magoshi 1, 1 Selete and 2 Toshiba, Japan

Resist Materials and Processing
11D-8-8
Enhancement of Sensitivity by Acid
Proliferation Reaction in EB and EUVResists

K. Takada 1, S.A. Pahlovy 1, Y. Kurashima 2 andI. Miyamoto 1, 1 Tokyo Univ. of Sci. and 2
Yamanashi Univ., Japan

P.C.W. Ng, S.-W. Chien, B.-S. Chang, K.-Y. Tsaiand Y.-C. Lu, National Taiwan Univ., Taiwan

H.H. Solak, C. Dais, F. Clube, Eulitha AG,
Switzerland

11D-8-9
DynamicsofRadicalCationofPoly(Styrene-Acrylate)-based Chemically
Amplified Resist for EUV and Electron
Beam Lithography

K. Enomoto 1,2, K. Arimitsu 3, H. Yamamoto 1,2,
A. Oshima 1, T. Kozawa 1,2 and S. Tagawa 1,2,
1 Osaka Univ., 2 JST-CREST and 3 Tokyo Univ.
of Sci., Japan

Y. Tajima 1, K. Okamoto 1,2, T. Kozawa 1,2,
S. Tagawa 1,2, R. Fujiyoshi 1 and T. Sumiyoshi
1, 1 Osaka Univ. and 2 JST-CREST, Japan

11D-8-11
Contact Hole Position Shift Behavior with
Resist Reflow Process

11D-8-12
Field Theory Implementation in Directed
Self-assembly Lithography

J.-H. You, E.-J. Kim, B. Kim and H.-K. Oh,
Hanyang Univ., Korea

S.-K. Kim, Hanyang Univ., Korea

11D-8-10
Development of New Negative-tone
Molecular Resists based on Alkylphenyl
Calixarene for EUVL
H. Hayashi, Y. Okada, M.Takasuka and
M. Echigo, Mitsubishi Gas Chemical, Japan

11D-8-130L
A Highly-Sensitive Inorganic Resist for
Directly
Fabricating
Thermally-stable
Oxide Pattern on Si Substrate by
Low-energy Electron-beam Direct Writing

K. Matsuda, S. Ushio, Y. Hirokawa, G. Taiki and
T. Kaneko, Kwansei Gakuin Univ., Japan-5-

Nanocarbon
11D-8-13
Dendrimer Functionalisation of Single
Walled Carbon Nanotube Arrays (SWCNT)

11D-8-14
An Ionizer for Gas Chromatography-mass
Spectrometry using Double-gate Vertically
Aligned Carbon Nanotubes

11D-8-15
Characteristics of the Electric Double
Layer Capacitances by using IrO2-coatedon CNT grown on Carbon Cloth

S.C. Tseng 1, R.-H. Uang 1, A.H.-L. Wu 2,
K.C.-C. Chou 2 and K.-H. Chen 2, 1 ITRI and
Sinetics Associates International, Taiwan

J.-H. Cai, K.-Y. Lee, Y.-M. Chen, Y.-C. Su andY.-S. Huang, National Taiwan Univ. of Sci. andTechnol., Taiwan

11D-8-16
Single-stranded DNA Electrically driven
into and out of Double-walled Carbon
Nanotubes

11D-8-17Fabrication of Carbon Nanowall-decorated
Single-walled Carbon Nanotubes by
Helicon Plasma CVD

11D-8-18
Highly Conductive Vertically Aligned CNTs
with MgZnO as Support Catalyst

Y. Li, T. Kaneko and R. Hatakeyama, Tohoku
Univ., Japan

T. Sato, T. Kato and R. Hatakeyama, Tohoku
Univ., Japan

11D-8-19
Enhancement of Small Signal based on
Electrolyte-gated
CarbonNanotube
Field-effect Transistors in Subthreshold
Regime11D-8-20
Pd Nanoparticles immobilized on Thiolated
Multi-walled Carbon Nanotubes for H2O2
Sensors

11D-8-21
Applications of Functionalized Carbon
Nanotubes as Efficient Catalyst for Stille &Hiyama Reactions

Y.N. Jeong and H.C. Choi, Chonnam National
Univ., Korea

J.Y. Kim and H.C. Choi, Chonnam National
Univ., Korea

11D-8-23
Synthesis of Graphene Film by Thermal
Chemical Vapor Deposition for theTransparent Electrode of Field Emission

11D-8-24
Thickness Control of Graphene Overlayer
via Layer-by-Layer Growth on Graphene
Templates by Chemical Vapor Deposition

C.-C. Li 1, S.-F. Jheng 2, K.-Y. Lee 1 andP.-W. Chiu 2, National Taiwan Univ. of Sci. andTechnol. and 2 National Tsin Hua Univ., Taiwan

R. Negishi, H. Hirano, Y. Kobayashi, Y. Ohno,
K. Maehashi and K. Matsumoto, Osaka Univ.,
Japan

11D-8-26
Depositionof
Near-atmosphericplasma CVD

11D-8-27
Theoretical Study on Graphene Sheetswith Periodic Nanoholes

M.A. Bissett and J.G. Shapter, Flinders Univ.,
Australia

Y. Hakamata, Y. Ohno, K. Maehashi, K. Inoueand K. Matsumoto, Osaka Univ., Japan

11D-8-22
Graphitization of SiC Nanowires by Joule
Heating
H. Kohno and Y. Mori, Osaka Univ., Japan

11D-8-25
First-Principles
Simulationon
Piezoresistivity in Alpha and Beta Silicon
Carbide Nanosheets
K. Nakamura, T. Toriyama and S. Sugiyama,
Ritsumeikan Univ., Japan

Graphene
Pressure

using
Pulsed-K. Nakanishi 1, M. Matsumoto 1, Y. Inayoshi 1,
Y. Uezawa 1, S. Nakajima 2, T. Uehara 2,
Y. Toyoshima 3, H. Fukidome 1 and M. Suemitsu
1, 1 Tohoku Univ., 2 Sekisui Chemicals and 3
AIST, Japan

M. Salina 1,2, A.B. Suriani 1, R. Ahmad 1,
A. Anuar 2, Y.M. Siran 3, S.A.M. Rejab 3,
A.J. Asis 3, S. Tahirruddin 3, S.Abdullah 1 and
M. Rusop 1, 1 Univ. Teknologi MARA and 2 Univ.
Industri Selangor and 3 Sime Darby Res. Dn
Bhd., Malaysia.

H. Jippo, M. Ohfuchi and C. Kaneta, FujitsuLabs., Japan

11D-8-131L
Formation of High-k Dielectric Films on
Graphene by Metal Oxidation for
Top-Gated Graphene Device Application
M.-H. Jung, H. Handa, R. Takahashi, H.
Fukidome and M. Suemitsu, Tohoku Univ.,Japan

Nanodevices
11D-8-28
Fabrication of Nanometer-Scale Pillar
Structures and its Application to
GaN-based Light-Emitting Diodes

11D-8-29
The Discussion for the Switching Speed of
the Electrochromic Devices by Inducing
ZnO Nanorod-modified

11D-8-30
Performanceof
Ultra-Violet
Photoconductive Sensor using WellAligned Aluminum Doped Zinc Oxide
Nanorod Arrays annealed in Air andOxygen Ambient

J.W. Yang 1, J.I. Sim 1, H.M. An 1, K.M. Ho 2
and T.G. Kim 1, 1 Korea Univ., Korea and 2 Iowa
State Univ., USA

Y.-W. Chung 1, J.-H. Lee 1, C.-J. Tsai 1,
C.-M. Chang 2, I.-C. Leu 3, M.-H. Hon 2, 1
South Industrial Technol. Res. Inst., 2 National
Cheng Kung Univ. and 3 National Univ. of
Tainan, Taiwan.

11D-8-31
Effects of Conductivity of ITO Electrodeand PEDOT:PSS Buffer Layer on
Performance of Flexible Organic Polymer
Solar Cells

11D-8-32
Preparation of Counter Electrode Thin Filmand Anthocyanin Dye for Dye-sensitizedSolar Cells

11D-8-33
Enhanced Optical and Electrical Properties
of Inorganic Electroluminescent Devices
using the Top Emission Structure

S. Woo 1,2, Y.J. Jeong 1, H.K. Lyu 1, J.H. Shim
1, S. Jeong 1, Y. Kim 2 and Y.S. Han 1, 1 DGIST
and 2 Kyungpook National Univ., Korea

H. Chang 1, M.-J. Kao 1, T.-L. Chen 1,
L.-J. Jiang 1 and C.-G. Kuo 2, 1 National Taipei
Univ. of Technol. and 2 National Taiwan Normal
Univ., Taiwan

J.-Y. Kim 1, S.H. Park 2, I. Han 2, D. Jung 1 and
S.G. Yu 3, 1 Sungkyunkwan Univ., 2 Samsung
Advanced Inst. of Technol. And 3 Hankuk Univ.
of Foreingn Studies, Korea

11D-8-34
Improvement of the Light Extraction
Efficiency of Nonpolar a-Plane GaN-based
Light Emitting Diodes by Nanopillar Arrays

11D-8-35
Effect of TiO2 Nanoparticle Modification on
UV Photodetection Properties of Al DopedZnO Nanowires Network

11D-8-36
Investigating the Role of Dye Dipole on
Observed Voc in Solid State Dye
Sensitized Solar Cells

B.-J. Kim, Y. Jung and J. Kim, Korea Univ.,
Korea

K.-P. Kim, D. Chang, S.K. Lim, H.-K. Lyu and
S.-K. Lee, DGIST, Korea

S.S. Pandey, Y.K. Lee, H. Azwar, Y. Ogomi and
S. Hayase, Kyushu Inst. of Technol., Japan

11D-8-37
Dye-Sensitized Solar Cells Made by
Polystyrene (PS) Nanoparticle Embedded
TiO2 Paste

11D-8-38
Resistance Switching
Effectusing
Nanogap Junctions in Gas Environments

11D-8-39
Electrode Width Dependence of Nanogap
MemoryY. Naitoh, H. Suga, T. Shimizu and M. Horikawa,
AIST, Japan

H. Suga, M. Horikawa, T. Shimizu and Y. Naitoh,
AIST, Japan

Y.-C. Hsu , T.C.C. Wu , I-C. Cheng and
J.Z. Chen , National Taiwan Univ., Taiwan-6-

M.H. Mamat, Z. Khusaimi, M.Z. Musa and
M. Rusop, Univ. Teknologi MARA, Malaysia

11D-8-42 (Formerly 12D-11-43)
Distinct Spin Valve Effects in Silicon
Nanowires Measured by Non-local
Electrode Configuration

11D-8-40
Effect of Various Top Electrode Material on
Resistive Switching Characteristics of TiO2
Thin Film

11D-8-41
Change in Magnetoresistance Property
depending on the State of Ni-Oxide
Memory Device

S.C. Oh 1, H.Y. Jung 1,2 and H. Lee 1, 1 Korea
Univ. and 2 Hynix Semiconductor, Korea

K. Suzuki, Y. Shiotani, Y. Sumita, T. Shimizu andS. Shingubara, Kansai Univ., Japan

J. Tarun 1,2, S. Huang 1, Y. Fukuma 1,
H. Idzuchi 1, Y. Otani 1, N. Fukata 3, K. Ishibashi
1,2 and S. Oda 2, 1 RIKEN, 2 Tokyo Inst. ofTechnol. and 3 NIMS, Japan

11D-8-43
Interface Characteristics with in-Situ Water
Vapor Treatment of Ge Substrate and HfO2
Dielectric Growth with Atomic Layer
Deposition

11D-8-44
Nickel Nanocrystals embedded in MANOS
Low Temperature Poly-Silicon Thin Film
Transistor with Low Programming/Erasing
Voltage for Non-Volatile Memory Application

11D-8-45
Characteristics of Stacked Thin Si3N4 andHfAlO Tunnel Barrier for HighperformanceFlash memory Device

Y.-J. Choi, I.-S. Park and J. Ahn, Hanyang Univ.,
Korea

Y.-C. Liu 1, C.-H. Wu 1, T.T.-J. Wang 2, T.-L. Lu
1, C.-T. Kuo 3 and I.-J. Hsieh 1, 1 Chung Hua
Univ., 2 National Chiao Tung Univ. and 3 Min
Dao Univ., Taiwan

11D-8-46
Electrical
Characteristicsof
WSi2
Nanocrystals Capacitor with Barrier
Engineered High-k Tunnel Layers

11D-8-47
Performance of Capacitorless 1T-DRAM
Cell on Silicon-Germanium-on-Insulator(SGOI) Substrate

11D-8-48
Tunnel FETs with Extremely Low
off-current using Shadowing Effect in Drain
Implantation

H.J. Lee 1, D.U. Lee 1, D.S. Han 1, E.K. Kim 1,
H.-W. You 2 and W.-J. Cho 2, 1 Hanyang Univ.
and 2 Kwangwoon Univ., Korea

J.-S. Oh, S.-M. Jung and W.-J. Cho,
Kwangwoon Univ., Korea

T. Mori, T. Yasuda, T. Maeda, W. Mizubayashi,
S. O'uchi, Y. Liu, K. Sakamoto, M. Masahara
and H. Ota, AIST, Japan

11D-8-132L
Heterojunction Photodiodes Based on
p-NiO/i-ZnO
Nanorods/n-ZnO
for
Ultraviolet Detection

11D-8-133L
Electrical Characteristics of Schottky
Barrier Thin Film Transistors (SB-TFTs)
with Pt Silicided Source/Drain on Glass
Substrate

S.-Y. Tsai 1, M.-H. Hon 1 and Y.-M. Lu 2, 1
National Cheng-Kung Univ. and 2 National Univ.
of Tainan, Tainan

J.-S. Oh and W.-J. Cho, Kwangwoon Univ.,
Korea

Nanofabrication
11D-8-49
Role of Secondary Electron Emission in
Shifting Ion Energy Spectrum in Trenches
during Etching in Two Frequency Plasma

11D-8-50
Fabrication of 10-nm Block Copolymer
Self-assembled
NanodotsforUltrahigh-density Magnetic Recording

A.P. Palov 1, Y.A. Mankelevich 1,
T.V. Rakhimova 1 and D. Shamiryan 2,
1 Moscow State Univ., Russia and 2 IMEC,
Belgium

M. Huda, T. Akahane, T. Tamura, Y. Yin and
S. Hosaka, Gunma Univ., Japan

11D-8-52
The Fabrication of Silver Striped Gratings
and Optimal Solutions for the TE-Mode
Infrared Transmission through the Gratings

11D-8-53
H-Termination Method for Maintaining
Reconstructed
Si(110)SurfacebyHigh-temperature Annealing

C.-W. Lee and C.-H. Kuan, National Taiwan
Univ., Taiwan

K. Araki 1,2, H. Isogai 2, R. Takeda 2,
K. Izunome 2 and X. Zhao 1, 1 Tokyo Univ. ofSci. and 2 Covalent Silicon, Japan

11D-8-55
Nano-size Patterning with Nanoimprint
Lithography using PVA Transfer Layer

11D-8-56
Morphological and Electrical Properties of
Self-textured AZO Films prepared by DC
Magnetron Sputtering for Applications to
Amorphous-Silicon Solar Cells

I.-S. Park and J. Ahn, Hanyang Univ., Korea

11D-8-58
Depositionof
Nanoparticles
Substrate Bias Voltage

using

K. Koga 1, H. Miyata 1, G. Uchida 1,
K. Kamataki 1, N. Itagaki 1, M. Shiratani 1,
N. Ashikawa 2, K. Nishimura 2, A. Sagara 2 andthe LHD Experimental Group 2, 1 Kyushu Univ.
and 2 National Inst. for Fusion Sci., Japan

H.-W. You and W.-J. Cho, Kwangwoon Univ.,
Korea

11D-8-51
Knocking
Down
Highly-ordered
Large-scale Nanowire Arrays
A. Pevzner, Y. Engel, R. Elnathan, T. Ducobni,
M. Ben-Ishai, K. Reddy, N. Shpaisman,
A. Tsukernik, M. Oksman and F. Patolsky,
Tel-Aviv Univ., Israel

11D-8-54
Dry Etching of Si by Solid Source I2
Inductively Coupled Plasma
A. Matsutani 1, H. Ohtsuki 2 and F. Koyama 1, 1
Tokyo Inst. of Technol. and 2 Samco
International, Japan

11D-8-57
Wetting Properties on Hydrophobic
Surface Structuring of Poly(Ethylene
Terephthalate) by Femtosecond Laser
Ablation

H. Yoo, Y.H. Lim, B.H. Choi and J.H. Lee, Korea
Inst. of Industrial Technol., Korea

S.-W. Luo 1, T.-L. Chang 2, H.-P. Yang 2 andH.-Y. Tsai 1, 1 National Tsing Hua Univ. and 2
ITRI, Taiwan

11D-8-59
Nanostructured Substrates derived from
Aerosol Nanoparticles for a Tagging
System with Surface-enhanced Raman
Spectroscopy

11D-8-60
Dependency of Wettability on Surface
Morphology of Nano-porous Alumina
H.C. Yang, Y.M. Park, Y.H. Seo and B.H. Kim,
Kangwon National Univ., Korea

M. Gen 1, H. Kakuta 2, Y. Kamimoto 3 and
I.W. Lenggoro 1, 1 Tokyo Univ. of Agriculture andTechnol., 2 Plant Ecochemicals Res. and 3
Kanagawa Industrial Technol. Ctr, Japan

11D-8-61
Formation of Nanograting on Silicon andGallium Arsenide using Femtosecond
Laser Pulse

11D-8-62
Fabrication of Gold Sub-wavelength Poresusing Gas-assisted Hot Embossing with
Anodic Aluminum Oxide (AAO) Template

D.-J. Kim 1, T.-H. Kim 1, W.-Y. Jang 1, K.-S. Lim
1 and I.-B. Sohn 2, 1 Chungbuk National Univ.
and 2 Gwangju Inst. of Sci. and Technol., Korea

W.-Y. Chang 1, J.-T. Wu 1, S.-Y. Yang 1,
K.-L. Lee 2 and P.-K. Wei 2, 1 National Taiwan
Univ. and 2 Academia Sinica, Taiwan

11D-8-134L
Annealing Effect of W incorporated DLC
fabricated by Ga focused ion beam CVD
Wada 1, T. Suzuki 1, M. Niibe 2, H. Ito 1 and K.
Kanda 2, 1 Nagaoka Univ. of Technol. and 2
Univ. of Hyogo, Japan-7-

11D-8-63
Nano-perforated
AluminumLayerfabricated by Anodic Aluminum Oxidation
M. Kang 1, Y.M. Park 1, H.G. Shin 1, Y.H. Seo 1,
B.H. Kim 1, K.-H. Kim 2 and Y.G. Park 2, 1
Kangwon National Univ. and 2 Micro to Nano
Technol., Korea

Nanomaterials
11D-8-64
Magnetic Anisotropy in Nd doped ZnOThin Films
M. Subramanian, M. Tanemura, T. Hihara,
T. Soga and T. Jimbo, Nagoya Inst. of Technol.,Japan

11D-8-65
Structural
andElectrochemical
Characterization of ZnO Nanorod/CNT
Composite Anodes for Lithium Ion
Batteries
11D-8-68
Tunable Ultraviolet Emission of ZnO
Nanocrystals embedded in Poly(Methyl
Methacrylate)

11D-8-70
ZnO Nanoparticles Formation by DC Arc
Plasma:An
Electron
ImpactDissociation/Ionization Mechanism

11D-8-71
Nanostructured ZnO/Conjugated Polymer
for P-N Hetero-Junctions

K. Senthilkumar, H. Okamoto, M .Tokunaga,
O. Senthilkumar and Y. Fujita, Shimane Univ.,
Japan

on

F.-S. Tsai, S.-J. Wang, Y.-C. Tu, Y.-W. Hsu andC.-Y. Kuo, National Cheng Kung Univ., Taiwan

I.T. Kim, M.J. Song, S.H. Kim, Y.B. Kim and
Y.S. Yoon, Yonsei Univ., Korea

11D-8-67
Controllable Growth of Vertically Aligned
Aluminum doped Zinc Oxide Nanorod
Arrays Prepared using Novel Low
Temperature Sonicated Sol-Gel Immersion
Method at Different Precursor Solution
Volumes
M.H. Mamat 1, Z. Khusaimi 1, M.Z. Musa 1,
A.B. Suriani 1, Y.M. Siran 2, S.A.M. Rejab 2,
A.J. Asis 2, S. Tahiruddin 1, S. Abdullah 1 and
M. Rusop 1, 1 Univ. Teknologi MARA and 2
Sime Darby Res. Sdn Bhd, Malaysia

11D-8-66
Ultraviolet
Sensors
based
Laterally-Grown ZnO Nanowires

S.K. Tzeng 1, M.H. Hon 1 and I.C. Leu 2, 1
National Cheng Kung Univ. and 2 National Univ.
of Tainan, Taiwan

C.M. Yang 1, M.H. Hon 1 and I.C. Leu 2, 1
National Cheng Kung Univ. and 2 National Univ.
of Tainan, Taiwan

11D-8-69
Growth and Characterization of Cu doped
ZnO Nanorods
R. Mohan and S.J. Kim, Jeju National Univ.,
Korea

11D-8-72
Fabricationof
Hierarchical
ZnO
Nanostructure Arrays for Enhancing the
CO Gas Sensing Performance
C.M .Chang 1, M.H. Hon 1 and I.C. Leu 2, 1
National Cheng Kung Univ. and 2 National Univ.
of Tainan, Taiwan

11D-8-73
Structural Characteristics of Zinc Oxide
Films treated in N2 Atmosphere using
Microwave Plasma Jet Sintering System

11D-8-74
Electro-mechanical Properties of IZTOThin Films on Transparent PI Substrate forTransparent and Bendable Devices

11D-8-75
3D Nanostructure consists of Hollow TiO2
Spheres fabricated by Atomic Layer
Deposition

C.-H. Su and C.-M. Huang, National Taipei Univ.
of Technol., Taiwan

W.J. Hwang 1, K.T. Eun 1, Y.D. Ko 2, D.J. Son 2,
Y.S. Kim 2 and S.H. Choa 1, 1 Seoul National
Univ. of Technol. and 2 Sungkyunkwan Univ.,
Korea

W.-J. Lee 1, M.-H. Hon 1, Y.-W. Chung 2 andJ.-H. Lee 2, 1 National Cheng Kung Univ. and 2
ITRI, Taiwan

11D-8-76
Transparent TiO2 Nanotube Arrays
prepared by Complete Anodization of Ti
Thin Films on ITO Glass

11D-8-77
TiO2 Nanotube Arrays on FTO Glass for
Solar Energy Harvesting

11D-8-78
Performances
CharacteristicsofDye-sensitized Solar Cells containing an
Anode Combining TiO2 Nanostructureswith Carbon Nanotube Bundles

M. Okada, K. Tajima, Y. Yamada, K. Yoshimura
and T. Ishida, AIST, Japan

S.I. Kim 1, S.M. Son 1, J.H. Hwang 1,
U.A. Shaislamov 1, J.M. Yang 2 and B. Yang 1,
1 Kumoh National Inst. of Technol. and 2 KAIST,
Korea

11D-8-79
Effects of Nitrogen Plasma Treatment on
Field Emission Properties of TiO2
Nanostructure

11D-8-80
Growth of CeO2 Large Cubes throughSelf-attachment of Nanocrystals in Colloid
Dispersion

11D-8-81
Drop-stamp Fabrication of Streptavidin
Molecular
Membraneusing
HFB
Self-organized Property

W.-J. Su , Y.-T. Wang , Y.-T. Shih and K.-Y. Lee,
National Taiwan Univ. of Sci. and Technol.,TaiwanF. Dang 1, K. Kato 1, H. Imai 2, S. Wada 3,
H. Haneda 4 and M. Kuwabara 5, 1 AIST, 2 Keio
Univ., 3 Yamanashi Univ., 4 NIMS and 5 Kyushu
Univ., Japan

A. Iwanaga 1, S. Shigematsu 1, M.B. Linder 2
and T. Haruyama 1, 1 Kyushu Inst. of Technol.,Japan and 2 VTT Biotechnol., Finland

11D-8-82
Current Transportation and Reliability
Characterization of CeO2 Thin Film

11D-8-83
Structure and Optical Characterization of
Molybdenum Oxide Nanowires

11D-8-84
Electrocatalytic Properties of Ru-doped
SnO2 Nanorods-supported Pt Catalysts for
Direct Methanol Fuel Cell

C.H. Chen 1, S.H. Chang 2, H.L. Hwang 1,
C.Y. Huang 3, Y.C. Lin 2 and F.C. Chiu 2, 1
National Tsing Hua Univ., 2 Ming Chuan Univ.
and 3 Ching Yuan Univ., Taiwan

C.C. Chang 1, Y.T. Hsieh 1 and H.-C. Shih 1,2, 1
National Tsing Hua Univ. and 2 Chinese Culture
Univ., Taiwan

11D-8-85
Nano-Structured Metal-Oxide Composites
for Photocatalytic Water-Splitting

11D-8-135L
Tube-in-Tube and Wire-in-Tube Nano
Building Blocks: Towards the realization ofmultifunctional Nanoelectronic Devices.

S.M. Son 1, S.I. Kim 1, J.H. Hwang 1, U.A.
Shaislamov 1, J.M. Yang 2 and B.L. Yang 1, 1
Kumoh National Inst. of Technol. and 2 KAIST,
Korea

M. Ben-Ishai and F. Patolsky, Tel-Aviv Univ.,
Israel

11D-8-137L
Self-Aligned Formation of Nanoscale
Phase Change Materials for Nonvolatile
Memory Application
S.-Y. Lee 1, S. Jung 1, S.-M. Yoon 2 and Y.S.
Park 2, 1 Hanbat National Univ. and 2 ETRI,
Korea

-8-

Y.-T. Shih, K.-S. Nian, W.-J. Su, K.-Y. Lee,
C.-A. Chen, Y.-M. Chen and Y.-S. Huang
National Taiwan Univ. of Sci. and Technol.,TaiwanM.J. Song, I.T. Kim, J.Y. Oh and Y.S. Yoon,
Yonsei Univ., Korea

11D-8-136L
Simple Method for Preparing Inorganic
Nanoparticles using a Plasma Jet
Operated in Open Air

Y. Shimizu, T. Sasaki, K. Kawaguchi and N.
Koshizaki, AIST, Japan

Nanoimprint, Nanoprint and Rising Lithography
11D-8-87
11D-8-86
Gradual Pressure Release for Reliable Fabrication of Complex Optical Film byusing an UV-curing Roll-to-Roll System
Nanoimprint Lithography
J.-S. Wi 1,2, R.J. Wilson 1 and S.X. Wang 1, 1
Stanford Univ., USA and 2 NIMS, Japan

C.H. Chuang 1, S.W. Tsai 1, D.M. Lu 1,
C.P. Chen 2 and Y.M. Lin 2, 1 Southern Taiwan
Univ. and 2 Metal Industries Res. & Develop.
Ctr., Taiwan

11D-8-89
Step and Repeat UV Nanoimprinting inPentafluoropropane Suppressing Resin
Adhesion to a Fluorinated Mold Surface
proved by Fluorescent Microscopy

11D-8-90
A Study on Quartz Multi-tier Mold
Fabrication using Gray Scale Laser Beam
Lithography

K. Kobayashi 1,2, S. Kubo 1,2, H. Hiroshima 2,3,
S. Matsui 2,4 and M. Nakagawa 1,2, 1 Tohoku
Univ., 2 JST-CREST, 3 AIST and 4 Univ. of
Hyogo, Japan

S.-W. Youn 1,2, S.-C. Park 1, Q. Wang 1,2,
K. Suzuki 2 and H. Hiroshima 1,2, 1 AIST and 2
JST-CREST, Japan

11D-8-88
Patterning of Polystyrene Thin Films by
Solvent-assisted Imprint Lithography andControlled Dewetting
K.L. Lai 1, S.F. Hsiao 1, I.C. Leu 2 and M.H. Hon
1, 1 National Cheng Kung Univ. and 2 National
Univ. of Tainan, Taiwan

11D-8-91
Fabrication of Capacity-equalized Mold
with Fine Patterns
K. Suzuki 1,2, S.-W. Youn 2,3, Q. Wang 2,3,
H. Hiroshima 2,3 and Y. Nishioka 1, 1 Nihon
Univ., 2 JST-CREST and 3 AIST, Japan

11D-8-92
Effect of Spreading of Hydrofluoroether in
Thermal Nanoimprint

11D-8-93
Evaluation of Curing Characteristics in
UV-NIL Resist

11D-8-94
High-resolution UV Nanoimprint Mold
fabricated by EB Lithography using Calix
Arene

H. Mekaru and H. Hiroshima, AIST, Japan

A. Horiba 1,2, R. Suzuki 1,2, H. Kawata 1,2 and
Y. Hirai 1,2, 1 Osaka Pref. Univ. and 2
JST-CREST, Japan

11D-8-95
Characteristics of Synthesized Radicaland Cationic-UV Nanoimprint Resins
Y. Sawada 1,5 , M. Okada 1,5,6 , H. Miyake 2,
T. Ohsaki 3, Y. Hirai 4,5, Y. Haruyama 1,5,
K. Kanda 1,5 and S. Matsui 1,5, 1 Univ. of
Hyogo, 2 Daicel Chemical Industries, 3 Toyo
Gosei, 4 Osaka Pref. Univ., JST-CREST and 6
JSPS, Japan

11D-8-96
Wafer
Scale
Room-Temperature
Nanoimprint using Spin-Coated HSQ with
PDMS Mold

11D-8-97
Highly Uniform Fabrication Process ofDiffraction Gratings for DFB LDs by using
Nanoimprint Lithography

Y. Kang 1,2, S. Omoto 1,2, M. Okada 1,2,3,
K. Kanda 1,2, Y. Haruyama 1,2 and S. Matsui
1,2, 1 Univ. of Hyogo, 2 JST-CREST and 3
JSPS, Japan

Y. Tsuji, M. Yanagisawa, H. Yoshinaga, N. Inoueand T. Nomaguchi, Sumitomo Electric Industries,Japan

11D-8-98
Fabrication of Zero-mode Waveguideusing Ultraviolet Nanoimprint Lithography
Lift-off Process

11D-8-99
Effects of Granularity of Patterns in a
Capacity-Equalized Mold Used for UV
Nanoimprint Lithography

11D-8-100
Experimental and Theoretical Verificationof Substrate Deformation Effects on
Demolding ForceJ. Wada 1, S. Ryu 1, Y. Asano 1, T. Yukawa 2,
J. Mizuno 1 and T. Tanii 1, 1 Waseda Univ. and 2
Daicel Chemical, Japan

Q. Wang 1,2, H. Hiroshima 1,2, S.-W. Youn 1,2
and K. Suzuki 1,2, 1 AIST and 2 JST-CREST,Japan

Y. Watanabe 1, N. Fujikawa 1, H. Kawata 1,2,
M. Yasuda 1,2 and Y. Hirai 1,2, 1 Osaka Pref.
Univ. and 2 JST-CREST, Japan

11D-8-102
Evaluation of Cell Adhesion using
Organosilane Monolayer Template Green-Tea Catechin Suppresses Cancer
Cell Adhesion -11D-8-103
Ordered Mesoporous Carbon Materials as
Novel Platforms for Enzymatic Fuel Cell
based on Direct Electron Transfer
Mechanism

T. Tanii 1, K. Sasaki 1, H. Yamamoto 1,
T. Demura 1, K. Ichisawa 1, H.A. Vu 2, H.T. Chi 2
and Y. Sato 1,2, 1 Waseda Univ. and 2 National
Ctr for Global Health and Medicine, Japan

A. Ambrosi, P. Srinivasu and Y. Miyahara, NIMS,
Japan

11D-8-104
Off-axis Diffractive Focusing Reflectors
Inside Microchannels Fabricated using
Femtosecond Laser Nonlinear Lithography

11D-8-105
Stacked Graphene Nanofibers as New
Platform
for
Sensitive,
Label-free
Impedimetric Genosensing

11D-8-106
High Frequency Single Cell Isolation by
2-D Microenclosure Array using Multipillar
Structure

H. Nishiyama 1, Y. Sagawa 2, Y. Hirata 2 andJ. Nishii 1, 1 Hokkaido Univ. and 2 Osaka Univ.,Japan

A. Bonanni 1, A. Ambrosi 1, M. Pumera 2 andY. Miyahara 1, 1 NIMS, Japan and 2 Nanyang
Technological Univ., Singapore

A. Matsutani and A. Takada, Tokyo Inst. ofTechnol., Japan

11D-8-107
Continuous Concentration and Separationof Microparticles depend on Dielectric
Constant by using Dielectrophoretic Forcein a V-shaped Electrode Array

11D-8-108
Nanosphere Monolayer as a Versatile
Platformfor
Surface-enhanced
Microanalytical Techniques

11D-8-109
Hydrophilicity of Surfactant-added PDMS
and its Application

S. Omoto 1,2, M. Okada 1,2,3, Y. Kang 1,2,
Y. Nakai 1,2, K. Kanda 1,2, Y. Haruyama 1,2,
S. Tono 4 and S. Matsui 1,2, 1 Univ. of Hyogo, 2
JST-CREST, 3 JSPS and 4 Tokuyama, Japan

11D-8-138L
Evaluation of Si Containing UV
Nanoimprint Resin and Bilayer Structure
Application
D. Yamashita 1,2, M. Okada 1,2,3, Y. Kang 1,2,
Y. Haruyama 1,2, K. Kanda 1,2 and S. Matsui
1,2, 1 Univ. of Hyogo, 2 JST-CREST and 3
JSPS, Japan

Bio MEMS, Lab on a Chip
11D-8-101
3D Cell Patterning and Microscaffolds by
Two-Photon
Scanning
Laser
Stereolithography
T.M. Hsieh, A.C.A. Wan and J.Y. Ying, Inst. of
Bioeng. and Nanotechnol., Singapore

H. Takei and T. Yamaguchi, Toyo Univ., Japan

M. Hayashi and K. Yasuda, Tokyo Medical and
Dental Univ., Japan-9-

J.H. Jeon, K.S. Park, H.T. Kim, J.K. Kim andO.C. Jeong, Inje Univ., Korea

11D-8-110
Elastomeric Blister Actuator for Pressure
Source of Disposable Microfluidic Infusion
Pump

11D-8-111
Multiplex SELEX on Chip with Optimized
Fluidic Network

11D-8-112
Image Recognition based Cell Sorting
Device with Cultivation Chamber

T.K. Kim and O.C. Jeong, Inje Univ., Korea

A. Hattori 1, M. Hayashi 1 and K. Yasuda 1,2, 1
Kanagawa Academy of Sci. and Technol. and 2
Tokyo Medical and Dental Univ., Japan

11D-8-139L
On-Chip
Multichannel
Extracellular
Potential
Monitoring
Systemfor
Measurement of Hysteresis of Neural
Networks Activity by Electrical Stimulation

11D-8-140L
An extended Gate
Biosensor
fortheDeoxynivalenol

11D-8-115
Torsion Fatigue of Polysilicon Microbridge
Structure

11D-8-116
Crosstalk Reduction of Tactile Sensor
Array with Projected Cylindrical Elastomer
over Sensing Element

W.K. Jang, K.I. Byun, Y.H. Seo and B.H. Kim,
Kangwon National Univ., Korea

11D-8-113
Electrolyte/Ultra
Thin
Insulator/Si
Capacitors for Protein Sensing Biochips
H. Einati 1, D. Gal 1, S. Hideshima 2, T. Osaka 2
and Y. Shacham-Diamand 1, 1 Tel-Aviv Univ.,
Israel and 2 Waseda Univ., Japan.

Microsystem Technology and MEMS
11D-8-114
Extracting Young's Modulus and ResidualStress through Measuring Pull-in andRelease Voltages of Microstructures

H. Terazono 1, M. Hayashi 1, H. Kim 1, A. Hattori
2, K. Yasuda 1,3, 1 Kanagawa Academy of Sci.
and Technol., 2 On-chip Cellomics Consortium
and 3 Tokyo Medical and Dental Univ., Japan

Y.-C. Chen and R. Chen, National Tsing Hua
Univ., Taiwan

J.-N. Hung 1, K. Sato 2 and H. Hocheng 1, 1
National Tsing Hua Univ., Taiwan and 2 Nagoya
Univ., Japan

11D-8-117
Fabrication of a Flexible All-Polyimide
Micropump using Thermal Nanoimprinting
Technique

11D-8-118
Development of Novel Fabrication Methodof Micro-Coil Springs using Laser Scan
Lithography and Nickel Electroplating

H. Komatsuzaki 1, K. Suzuki 1, Y. Liu 1, T.
Kosugi 1, R. Ikoma 1, L. Jiang 1, T. Nakamura 1,
S.-W. Youn 2, M. Takahashi 2, R. Maeda 2 andY. Nishioka 1, 1 Nihon Univ. and 2 AIST, JapanT. Horiuchi 1, H. Ishii 1, Y. Shinozaki 1, T. Ogawa
1 and K. Kojima 2, 1 Tokyo Denki Univ. and 2
LuzCom, Japan

11D-8-120
Deformation Analysis of Au Cone Bump in
3D LSI Stacking

11D-8-121
Control of Polymer Coating Area on Silicon
Surfaces with Dry-Etched Sub-micronwide Trench Patterns

N. Watanabe 1, T. Higashimachi 2 and T. Asano1, 1 Kyushu Univ. and 2 Sojo Univ., Japan

S. Murakami 1, T. Ikehara 1, M. Konno 1,
R. Maeda 1, T. Fukawa 2, M. Kimura 2 andT. Mihara 3, 1 AIST, 2 Shinshu Univ. and 3
Olympus, JapanMOSFET-based
DetectionofI. Kwon 1, J. Choi 1, H.-H. Lee 1, J.-K. Shin 1,
S.-W. Choi 2 and H.S. Chun 2, 1 Kyungpook
National Univ. and 2 Korea Food Res. Inst.,
Korea

T. Uematsu 1, M. Sohgawa 1, W. Mito 2,
T. Kanashima 1, M. Okuyama 1 and H. Noma 2,
1 Osaka Univ. and 2 ATR, Japan

11D-8-119
Fabrication of Multi-layered Micro Gearusing Vertical Modularized and Sectioned
Micromold
Systemvia
X-ray
Micromachining Process
J.H. Kim, S.S. Chang, G. Lim and B.-K. Lee,
POSTECH, Korea

11D-8-122
Resist-coating on Vertical Side Faces
using Conventional Spin Coating for
Creating
three-Dimensional
Nanostructures in Semiconductor
K. Yamazaki and H. Yamaguchi, NTT, Japan

11D-8-123
Micro Patterning Technology for Fiber
Substrate

11D-8-124
Fine and Dense Metal Pattern Transfer by
New Template with Low Sticking Film

Y. Lu 1, Y. Zhang 1,2, J. Lu 1,2, A. Mimura 2,
S. Matsumoto 1,2 and T. Itoh 1,2, 1 NEDO
Beans Project and 2 AIST, JapanK. Hara, S. Kubo, H. Kawata, M. Yasuda and
Y. Hirai, Osaka Pref. Univ., Japan

11D-8-126
Analysis on Evaporation Kinetics of Water
Microdrops on Nanoporous Structure

11D-8-127
Surface
Treatment
using
VacuumUltraviolet and Formic Acid Vapor for
SnCu-Au Flip-Chip Bonding

11D-8-128
Formation of Resistance in Thermoplastic
Resin Substrate by Laser Assisted Micro
Powder Jet Implantation

N. Unami 1, K. Sakuma 2, S. Shoji 1, andJ. Mizuno 1, 1 Waseda Univ. and 2 IBM Res.
Tokyo, Japan

T. Saito 1, T. Sugai 1, S. Watanabe 1,
S. Kameya 1, K. Suzuki 1, K. Miura 2 andT. Kuriyagawa 3, 1 Sendai National College of
Techol., 2 Miura Sensor Res. and 3 Tohoku
Univ., Japan

11D-8-141L
Quartz MEMS based Double-Ended
Tuning Fork with Variable Sections

11D-8-142L
A Micromachined Atmospheric Pressure
Plasma-Jet Device

11D-8-143L
Silicon Nanowires based Vaporizing Liquid
MEMS Space Micro-thruster

J. Liang 1, X. Li 2, H. Li 1, Y. Ni 1, K. Li 1, L.
Huang 1 and T. Ueda 2, 1 Southeast Univ.,
China and 2 Waseda Univ., Japan

G. Kim, K. Kim and S.S. Yang, Ajou Univ., Korea

C.-W. Liu 1,2, C.C. Chen 3, L.H. Hu 4, B.T. Dai
2, H.C. Kan 3, G.S. Chang 4 and M.C. Cheng 5,
1 National Yunlin Univ. of Sci. and Technol., 2
National Nano Device Labs., 3 National Centerfor High-Performance Computing, 4 National
Space Organization and 5 National Applied Res.
Labs., Taiwan

M. Lee, D. Lee and S. Jeon, POSTECH, Korea

Room E (4F)
18:40-20:40 Banquet
MNC 2010 Prof. Namba Award Presentation-10-

11D-8-125
The Optimization of Glass Dry Etching
Process with Single PR Mask for Biochip
Applications
T.G. Park 1, Y. Oh 2, W. Seo 2, J. Min 1
D.-C. Han 1, 1 Seoul National Univ. and 2
AMED, Korea

Friday, November 12
Room A (3F)

Room B (3F)

Room C (3F)

12A-9: Symp. A. Green Lithography III
Chairpersons:S. Nagahara (Renesas Electronics)
J. Kitano (Tokyo Electron)

12B-9: Nanocarbon I
Chairpersons:S. Akita (Osaka Pref. Univ.)
K. Maehashi (Osaka Univ.)

12A-9-1
9:00
Materials Development for Cost Effective
Lithography and Patterning Extensions(Invited)

12B-9-1
9:00
Ultrahigh-density Data
Fullerene C60 Molecules

M. Nakaya 1, M. Aono 1 and T. Nakayama 1,2, 1
NIMS and 2 Univ. of Tsukuba, Japan

H.Y. Low
IMRE, Singapore

12A-9-2
9:30
Use Efficiency of Photon, Electron,and Proton in Chemically Amplified
Resists -Resist Design for Cost
Effective Lithography(Invited)

12B-9-2
9:20
Operation of Single-electron Memory using
Floating-gated Carbon Nanotube Fieldeffect Transistors

12C-9-2
9:30
Process Simulation
Lithography (Invited)

T. Kozawa , Osaka Univ., Japan

T. Ohori, Y. Ohno, K. Maehashi, K. Inoue and
K. Matsumoto, Osaka Univ., Japan

12A-9-3
10:00
Cost-Effective Litho / Coater /Developer
Technologies (Invited)

12B-9-3
9:40
Fabricated Flexible Sensing Array for
Posture Monitoring

M. Kubota, J. Kitano and H. Kyouda
Tokyo Electron Kyushu, Japan

T.-M. Chen 1, F.-Y. Chang 1, R.-H. Wang 2,
Y.-H. Lin 1 and Y.-F. Lee 1, 1 National Taiwan
Univ. of Sci. and Technol. and 2 ITRI, Taiwan

12A-9-4
10:30
Graphoepitaxy of Diblock Copolymers
for Lithographic Application (Invited)

12B-9-4
10:00
EffectofReductionofParasitic
ResistancesonHigh-frequency
Characteristics of Carbon Nanotube FETs

R.R. Dammel, AZ Electronic Materials, Hong
Kong

T. Yamaguchi 1,2, H. Yamaguchi 1 and T. Iyoda
2, 1 NTT and 2 Tokyo Inst. of Technol., Japan

Storageusing

K. Hata, Y. Ohno, S. Kishimoto and T. Mizutani,
Nagoya Univ., Japan

12C-9: Nanoimprint, Nanoprint and
Rising Lithography I
Chairpersons:
H. Hiroshima (AIST)
A. Yokoo (NTT)
12C-9-1
9:00
3-D Hierarchical Micro and Nano structures via Nanoimprinting (Invited)in

Nanoimprint

Y. Hirai 1,2
1 Osaka Pref. Univ. and 2 CREST-JST,
Japan

12C-9-3
10:00
Nanoimprint Mold for High-density Bit
Patterned Media with Phase Servo Pattern
fabricated by Self-assembling Polymer
Mask

R. Yamamoto, A. Yuzawa, T. Shimada,
Y. Ootera, Y. Kamata, N. Kihara and A. Kikitsu,
Toshiba, Japan

12C-9-4
10:20
Fabrication of Y2O3:Eu3+ gel 2D PC
assisted Thin-film Phosphors using Direct
Nano-imprinting with Various Working
Pressure
E-J. Her 1, K.-Y. Ko 1, H. Lee 2, Y.R. Do 3 andJ. Ahn 1, 1 Hanyang Univ., 2 Korea Univ. and 3
Kookmin Univ., Korea

12B-9-5
10:20
Piezoelectric Response of PZT Domain
with CNT toward PZT-CNT-FETS. Kataoka, T. Okada, T. Arie and S. Akita,
Osaka Pref. Univ., Japan

Lobby (3F)
Coffee BreakRoom A (3F)

Room B (3F)

12A-10: Symp. A. Green Lithography IV
Chairpersons:
H. Mohri (DNP)

H.J. Levinson (GlobalFoundries)

12B-10: Nanocarbon II
Chairpersons:
M. Nagase (Tokushima Univ.)
H. Fukidome (Tohoku Univ.)

12A-10-1
11:30
Using
FlexRayin
Lithography (Invited)

12B-10-1
11:10
A New Transfer Process of Epitaxial
Graphene (Invited)

Computational

R. Socha 1, W. Shao 2, Y. van Dommelen 1, D.
Oorschot 3, H. Meggens 3, P. van Adrichem 3,
X. Xie 2, R. Aldana 2, F. Du 2, R. Goossens 2,
Z. Yu 2, L. Reijnen 3, R. Knops 3 and K. Schreel
3, 1 ASML, USA, 2 Brion Techonol., USA and3ASML, The Netherlands

12A-10-2
12:00
CD-SEM
Metrology
forCost-effective
Lithography Techniques (Invited)
A. Yamaguchi 1, H. Kawada 2, T. Maeda 2 andK. Sasada 2
1 Hitachi and 2 Hitachi High-Technologies,
Japan

12A-9,10: 12:30-12:45, Author's Interview

A. Hashimoto
Univ. of Fukui, Japan

Room C (3F)
12C-10: Nanoimprint, Nanoprint and
Rising Lithography II
Chairpersons:
H.Y. Low (IMRE)
Y. Hirai (Osaka Pref. Univ.)
12C-10-1
11:10
Study on Change in UV Nanoimprint
Pattern by Altering Shrinkage of UVCurable Resin
H. Hiroshima 1, 2 and K. Suzuki 2,3, 1 AIST, 2
JST-CREST and 3 Nihon Univ., Japan

12B-10-2
11:40
Formation of Epitaxial Graphene on
Mesa-patterned SiC Substrate
H. Handa 1, R. Takahashi 1, K. Imaizumi 1,
Y. Kawai 1, H. Fukidome 1, Y. Enta 2,
M. Suemitsu 1, M. Kotsugi 3, T. Ohkochi 3,
Y. Watanabe 3 and T. Kinoshita 3
1 Tohoku Univ., 2 Hirosaki Univ. and 3
JASRI/SPring-8, Japan-11-

12C-10-2
11:30
A Method for Estimating Bubble Defect inNanoimprint Lithography
H. Hocheng, W.-H. Hsu and J.-T. Shy, National
Tsing Hua Univ., Taiwan

12B-10-3
12:00
Fabrication of a Graphene Pattern from
Resist Material using Liquid Gallium

Y. Miyazawa 1,2, R. Ueki 1,2 and J. Fujita 1,2, 1
PRESTO-JST and 2 Univ. of Tsukuba, Japan

12C-10-3
11:50
ResistPattern
Inspectionusing
Fluorescent Dye-doped Poly(styrene) Thin
Films in Reactive-monolayer-assisted
Thermal Nanoimprint Lithography
S. Kubo 1,2, Y. Sato 1 and M. Nakagawa 1,2, 1
Tohoku Univ. and 2 JST-CREST, Japan

12B-10-4
12:20
Nanoscale
Fabricationof
Stacked-junctions on thin Graphite layer by
Focused ion Beam and Observation of an
Anomalous Transport Behavior

12C-10-4
12:10
Effects of Resist Thickness and Viscosity
on the Cavity Filling Capability in Bilayer
Imprint Embossing

G. Venugopal and S.-J. Kim, Jeju National Univ.,
Korea

Y. Xu 1, F. Tsumori 1, T. Toyooka 2, H. Kotera 2
and H. Miura 1, 1 Kyushu Univ. and 2 Kyoto
Univ., Japan

12B-10-5
12:40
Graphene Field-effectChemical Sensors

12C-10-5
12:30
Molecular Dynamics Study on Atomic
Scale Imprint

TransistorsforY. Sofue, Y. Ohno, K. Maehashi, K. Inoue and
K. Matsumoto, Osaka Univ., Japan

K. Tada 1, M. Yasuda 2, Y. Akita 3, Y. Miyake 3,
H. Kawata 2, M. Yoshimoto 3 and Y. Hirai 2, 1
Toyama National College of Technol., 2 Osaka
Pref. Univ. and 3 Tokyo Inst. of Technol., Japan

12B-9, 10: 13:00-13:15, Author's Interview

12C-9, 10: 12:50-13:05, Author's Interview

Room D (3F)

12D-11: 14:00-16:00 Poster Session II
DUV, EUV Lithography and Metrology
12D-11-1
Xe-based Gas Jet Type Z-pinch Discharge
Produced Plasma (DPP) EUV Source for
Lithography

12D-11-2
Development of Coherent 13.5-nm
High-order Harmonics for Coherent
Scatterometry Microscope

B. Huang, Y. Takimoto, M. Watanabe andE. Hotta, Tokyo Inst. of Technol., Japan

Y. Nagata 1,3, T. Harada 2,3, H. Kinoshita 2,3
and K. Midorikawa 1, 1 RIKEN, 2 Univ. of Hyogo
and 3 JST-CREST, Japan

12D-11-4
Scanner Slit Uniformity Monitoring byusing Blank Exposure Method

12D-11-5
New Design based Metrology for Fast
Detection of Crucial Lithographic Defects

J. Heo, S. Oh, J. Yeo and C. Kang, Samsung
Electronics, Korea

D.-H. Hur 1,2, T.-H. Kim 1 and C.-H. Park 1,
S.-H. Lee 1, M.-H. Yoo 1 and J.-D. Cho 2, 1
Samsung Electronics and 2 Sungkyunkwan
Univ., Korea

Electron- and Ion-Beam Lithography,
12D-11-6
Effect of Ion implanted Damage on the
Growth of Gallium Nitride on Silicon Nitride
Surfaces using Metal-organic Chemical
Vapor Deposition
J. Yanagisawa, Univ. of Shiga Pref., Japan

12D-11-140L
Measurement of a Surface Potential of
Insulating Materials in a Scanning Electron
Microscope
A. Osada, M. Kotera, T. Kawamura andK. Arita, Osaka Inst. of Technol., Japan
Resist Materials and Processing
12D-11-9
Backexposure Effect in Chemically
Amplified Resist Process upon Exposure
to Extreme Ultraviolet Radiation
T. Kozawa 1, S. Tagawa 1, R. Ohnishi 2, T. Endo
2 and R. Sakamoto 2, 1 Osaka Univ. and 2
Nissan Chemical, Japan

12D-11-7
Computer-aided Analysis of a Field Emitter
Array Built-in Suppressor for a Micro-column Electron Beam Microscope
A. Koike 1, Y. Takagi 1, T. Fujino 1, M. Nagao 2,
T. Yoshida 2, H. Murata 3, K. Sakai 3, T. Aoki 1,
Y. Neo 1 and H. Mimura 1, 1 Shizuoka Univ., 2
AIST and 3 Meijyo Univ., Japan

12D-11-10
Development of a Negative-tone Molecular
ResistbasedonHydroxylphenyl
Calix[4]Resorcinarene Derivative for EUVL
M. Takasuka, Y. Okada, H. Hayashi and
M. Echigo, Mitsubishi Gas Chemical, Japan

12D-11-12
Theoretical Study of Photoacid Generators
for EUV Resist
M. Endo 1,2 and S. Tagawa 1,2, 1 Osaka Univ.
and 2 JST-CREST, Japan-12-

12D-11-3Fabrication of Transmission Grating for
Replication of 20 nm Node Resist Pattern
Y. Yamaguchi, Y. Fukushima, M. Tada,
T. Harada, T. Watanabe and H. Kinoshita, Univ.
of Hyogo, Japan

12D-11-8
Iterative Finite-difference Method for
Analyzing
Fabrication
ErrorsofLens-misaligned
Electron-beam
Direct-write Lithography System
Y.M. Lee, J.H. Li, S.Y. Chen, S.Y. Ma, K.Y. Tsai,
T.W. H. Sheu and J.Y. Yen, National Taiwan
Univ., Taiwan

12D-11-11
Ionization Potential of Chemically Amplified
Extreme Ultraviolet Resists Studied by
Ultraviolet Photoelectron Spectroscopy(UPS)
H. Yamamoto 1,2, T. Kozawa 1,2 and S. Tagawa
1,2, 1 Osaka Univ. and 2 JST-CREST, Japan

Nanocarbon
12D-11-13
Measurement of Young's Modulus of
Carbon Nanofiber Probes fabricated by Ion
Irradiation Method

12D-11-14
Thermal Dissipation of High-brightness
Light Emitting Diode by using Multi-walled
Carbon Nanotube/SiC Composites

K. Inaba 1, K. Saida 1, A. Hayashi 1, Y. Hayashi
1, M. Tanemura 1, M. Kitazawa 2 and R. Ohta 2,
1 Nagoya Inst. of Technol. and 2 Olympus,
Japan

B.-J. Li 1, C.-H Chang 1, Y.-K. Su 1, K.-J. Gan 2
and J.-W. Hong 3, 1 National Cheng Kung Univ.
and 2 National Chiayi Univ. and 3 Kun Shan
Univ., Taiwan

M. Zamri 1,2, P. Ghosh 1, M. Sasase 3,
A. Hayashi 1, Y. Hayashi 1 and M. Tanemura 1,
1 Nagoya Inst. of Technol., Japan and 2 Univ.
Teknologi Malaysia, Malaysia and 3 Wakasawan
Energy Res. Ctr, Japan

12D-11-16
Generation and Repair of Defects in
Carbon Nanotubes under Tensile Stressand Low-acceleration Electron Beam
Irradiation

12D-11-17
Numerical Simulation on AC Response ofMetallic Carbon Nanotube Bridges

12D-11-18
Development of Transparent and Flexible
Field Electron Emitters

T. Yamamoto 1, K. Sasaoka 2 and S. Watanabe
1, 1 Univ. of Tokyo and 2 Univ. of Tsukuba,Japan

P. Ghosh 1, M.Z. Yusop 1,2, D. Ghosh 1,
S. Satoh 1, M. Subramanian 1, A. Hayashi 1,
Y. Hayashi 1, N. Miura 3 and M. Tanemura 1, 1
Nagoya Inst. of Technol., Japan, 2 Univ.
Teknologi Malaysia, Malaysia and 3 Meiji Univ.,
Japan

12D-11-19
Organic
Electrolyte
Based
PulsedNano-Plating and Fabrication of Carbon
Nanotube Network Transistors

12D-11-20
In Situ Transmission Electron Microscopyof Bending Process of Crystalline C70
Nanowhiskers

12D-11-21
Chemical Vapor Deposition of BN-doped
Graphene

M.G. Kang 1, D.H. Hwang 1, H.T. Kim 1, T.G.
Kim 1, M.S. Choi 1, J.S. Hwang 1, D. Whang 2
and S.W. Hwang 1,2, 1 Korea Univ. and 2
Sungkyunkwan Univ., Korea

T. Tokumine 1, K. Miyazawa 2 and T. Kizuka 1, 1
Univ. of Tsukuba and 2 NIMS, Japan

12D-11-22
Study of Graphene Growth by Gas-source
Molecular Beam Epitaxy using Cracked
Ethanol: Influence of Gas Flow Rate on
Graphitic Material Deposition

12D-11-23
Magnetic Phase Control of Rhombohedral
Graphite Thin Films by Electric Field

R. Ueki 1,2, T. Hikata 3, S. Okubo 3,
R. Utsunomiya 4, T. Matsuba 4 and J. Fujita 1,2,
1 PRESTO-JST, 2 Univ. of Tsukuba, 3 Sumitomo
Electric and 4 Nissin Electric, Japan

12D-11-15
Structural Change of Ion-induced Carbon
Nanofibers by Field Emission Process

S. Suzuki and H. Hibino, NTT, Japan

12D-11-24
Electronic Structure of Graphene Layers
on SiO2 Substrate

F. Maeda and H. Hibino, NTT, Japan

M. Otani 1,4, M. Koshino 2, Y. Takagi 3,4 andS. Okada 3,4, 1 AIST, 2 Tokyo Inst. of Techonol.,3 Univ. of Tsukuba and 4 JST-CREST, Japan

12D-11-25
Optical Observation of Graphene on PZTThin Film toward PZT-Graphene- FET

12D-11-26
Fabrication of p-n-p Graphene Structure
and Observation of Current Oscillation

12D-11-27
Proposal of Graphene Bandgap Control by
Network Formation

J. Suzuki, T. Arie and S. Akita, Osaka Pref. Univ.,
Japan

K. Konishi and K. Yoh, Hokkaido Univ., JapanL. Zou, K. Konishi and K. Yoh, Hokkaido Univ.,
Japan

12D-11-29
Ultimately Width-scaled
Transistors

12D-11-30
Simplified Model of the Effect ofSource/Drain
Doping
Gradienton
Capacitance and Resistance in a
Double-gate MOSFET

Nanodevices
12D-11-28
Development of a SOI Platform with Gates
down to 12 nm for CMOS-Compatible
Monoelectronics
S. Pauliac-Vaujour 1, R. Wacquez 1,2, C. Vizioz
1, C. Comboroure 1, B. Prévitali 1, N. Bove 1,
M. Vinet 1, M. Pierre 2, B. Roche 2, X. Jehl 2and M. Sanquer 2, 1 CEA-LETI and 2 CEAINAC, France

SOI

Tri-gate

S.H. Kim 1,2, H.J. Bae 1, D.-W. Kim 1,
S. Yamada 1, G. Jin 1, C. Chung 1 and Y. Roh 2,
1 Samsung Electronics and 2 Sungkyunkwan
Univ., Korea

N.T. Cuong 1,3, M. Otani 1,3 and S. Okada 2,3,
1 AIST, 2 Univ. of Tsukuba and 3 JST-CREST,
Japan

D.-H. Moon, J.-J. Song and O. Kim, POSTECH,
Korea

12D-11-31
High Breakdown Voltage GaN Schottky
Barrier Diode on Silicon Substrate

12D-11-32
Transport Properties of InAs-based
Three-terminal Ballistic Junctions

M.-W. Ha 1, C.H. Roh 1, H.G. Choi 1, H.J. Song
1 and J.H. Lee 1, D.W. Hwang 1,2, J.H. Park 2,
O. Seok 3, J. Lim 3, M.-K. Han 3 and C.-K. Hahn
1, 1 Korea Electronics Technol. Inst., 2 Korea
Univ. and 3 Seoul National Univ., Korea

H. Nishioka 1, Y. Ishibashi 1, T. Kiso 1,
T. Maemoto 1, S. Sasa 1, S. Kasai 2 and
M. Inoue 1, 1 Osaka Inst. of Technol. and 2
Hokkaido Univ., Japan

12D-11-34
Selective Growth of ZnO Nanorods on
Silicon Sub-micron Devices

12D-11-35
Low-frequency Noise in GaAs Nanowire
FETs controlled by Schottky Wrap Gate

12D-11-36
Electrical Characterization of Pd Gate
InAs-based Heterostructure

C.-H. Sang, C.-C. Chen and J.-T. Sheu, National
Chiao Tung Univ., Taiwan

K. Miura 1, Y. Shiratori 1 and S. Kasai 1,2, 1
Hokkaido Univ. and 2 PRESTO-JST, Japan

T. Isikura, Z. Cui , T. Matsuda and K. Yoh,
Hokkaido Univ., Japan

12D-11-37
Fabrication of Spin Transistors based on
InAs Nanowire

12D-11-38
Optical Response of a Silicon Nanowire
FET
Conjugated
with
Zinc
Octaethylporphyrin Molecules

12D-11-39
The Effect of Structural Defects on
Transport Electrons in InSb Quantum
Wells

D.J. Lee 1, M.S. Choi 1, D. Whang 2, H.J. Kim 3
and S.W. Hwang 1, 1 Korea Univ., 2
Sungkyunkwan Univ. and 3 Kumoh National
Inst. of Technol., Korea

T.D. Mishima and M.B. Santos, Univ. of
Oklahoma, USA

12D-11-41
RF Modeling of Junctionless
Nanowire MOSFETs

12D-11-42
Low-Frequency Contact Noise of a GaN
Nanowire Device by using Cross Spectrum
TechniqueZ. Cui 1, K. Konishi 1, T. Ishikura 1, B. Babu 1
and K. Yoh 1, Hokkaido Univ., Japan

12D-11-40
A Theoretical Study on a Novel
Single-electron Refrigerator Applicable to
Semiconductor Materials
H. Ikeda and F. Salleh, Shizuoka Univ., Japan

Silicon

K.R. Kim 1 and I.M. Kang 2, 1 Ulsan National
Inst. of Sci. and Technol. and 2 Kyungpook
National Univ., Korea-13-

12D-11-33
Electrical and Magnetic Properties ofTunneling Device with FePt Magnetic
Quantum Dots
S.W. Pak, J. Suh, D.U. Lee and E.K. Kim,
Hanyang Univ., Korea

L.C. Li 1, K H. Huang 2, J.A. Wei 2, Y.W. Suen
2,3, T.W. Liu 4, C.C. Chen 4, L.C. Chen 5 andK.H. Chen 5, 1 National Chiao Tung Univ., 2
National Chung Hsing Univ., 3 National Nano
Device Labs, 4 National Taiwan Normal Univ.
and 5 National Taiwan Univ., Taiwan

12D-11-43

12D-11-44
Electron Emission from LiNbO3 Crystal
Excited by Nd:YLF Laser and its X-ray
Source Application
T. Kisa 1, E. Kaga 1, K. Murakami 1, S. Abo 1,
F. Wakaya 1, I. Bársony 2 and M. Takai 1, 1
Osaka Univ. and 2 Hungarian Academy of Sci.,
Hungary

12D-11-45
Asymmetric Structure of Photonic Crystal
Color Filter for CMOS Image Sensor
K. Kokubun, K. Shiozawa, J. Tonotani, N. Momo,
K. Akimoto, C. Chang, H. Sasaki, N. Okada,
H.S. Momose, T. Ohguro and Y. Toyoshima,
Toshiba, Japan

12D-11-46
Fabrication of 4H-SiC Field Emitter Arrayswith Integrated Electrode Structure
T. Borsa and B. Van Zeghbroeck, Univ. ofColorado at Boulder, USA

Nanofabrication
12D-11-47
Buckling-angle-dependent Resistance of a
DWNT Observed under a High-resolution
Transmission Electron Microscope

12D-11-48
Fabrication and Characterization
Nanopore in a Si3N4 Membraneof

12D-11-49
Deposition and Characterization of
Nano-composite Ti-C Thin Films by
Elemental Target Magnetron Sputtering

T.-C. Lin 1,2, R.-Z. Su 2, D.-C. Wang 1 and C.-S.
Wu 2, 1 National Yunlin Univ. of Sci. andTechnol. and 2 National Changhua Univ. of
Education, Taiwan

T. Sonoda and S. Nakao, AIST, Japan

12D-11-51
Nanofabrication of Nickel Stamp for
ReplicationofPolymer
Multi-level
Nanolens Arrays via Two-step Anodization
Process

12D-11-52
FabricationofPolymer
MicroPyramid/Nano-lens Combined Structures
using
Microstructured
Nanodimpled
Aluminium Stamp

K.J. Cha 1, B.-K. Lee 1, T.H. Kwon 1 and
D.S. Kim 2,1, 1 POSTECH and 2 Chung-Ang
Univ., Korea

K.J. Cha 1, B.-K. Lee 1, T.H. Kwon 1 and
D.S. Kim 2,1, 1 POSTECH and 2 Chung-Ang
Univ., Korea

12D-11-53
Fabrication of SALDI Substrate using
Laser
AblationinLiquids
andElectrophoresis Deposition

12D-11-54
Electron Transport Properties of Pt
Nanoarch fabricated by Electron-beamInduced Deposition

12D-11-55
Precise Slit-width Control of Niobium
Apertures for Superconducting LED

M. Yasutomo 1, T. Tsuji 1, T. Mizuki 1, M. Tsuji 1
and H. Kawasaki 2, 1 Kyushu Univ. and 2
Kansai Univ., JapanF. Wakaya, K. Takamoto, T. Teraoka,
K. Murakami, S. Abo and M. Takai, Osaka Univ.,
Japan

J.-H. Huh 1,2, H. Sato 1, S. Ito 1, Y. Idutsu 1,
K. Tanaka 2,3, T. Akazaki 2,4 and I. Suemune
1,2, 1 Hokkaido Univ. 2 JST-CREST, 3
Hamamatsu Photonics and 4 NTT, Japan

12D-11-56
Annealing Effect of Fe-Ga doped DLC Film
formed by Focused-ion-beam Chemical
Vapor Deposition using Ferrocene SourceGas

12D-11-57
Fabrication of Nano SQUID in Multilayered
Thin Film of Y123/P123 using Focused Ion
Beam

12D-11-58
Fabrication of Metrology Test Structureswith Programmed Line Edge Roughness
using Electron Beam Direct Write

S. Saini 1, M. Takamura 2, M. Mukaida 2 and
S.-J. Kim 1, 1 Jeju National Univ., Korea and 2
Kyushu Univ., Japan

F.-M. Wang 1, K.-Y. Tsai 1, J.-H. Li 1, A.C. Chen
2, Y.-M. Lee 1, Y.-T. Shen 1, H.-H. Cheng 1 andC.-H. Kuan 1, 1 National Taiwan Univ. and 2
ASML, Taiwan

T. Nishijima 2, R. Ueki 1,2, Y. Miyazawa 1,2 andJ. Fujita 1,2, 1 PRESTO-JST and 2 Univ. of
Tsukuba, Japan

12D-11-50
Influence of the Electrical Passivation on
High Voltage Anodizing Process
J.K. Son, Y.M. Park, Y.H. Seo and B.H. Kim,
Kangwon National Univ., Korea

Y. Nakai 1, Y. Kang 1, M. Okada 1,2,
Y. Haruyama 1 , K. Kanda 1 and S. Matsui 1, 1
Univ. of Hyogo and 2 JSPS, Japan

12D-11-59
Large
Magnetoresistance
Switching
Phenomena in a Nano-Conduction Path
Formed with Dielectric Breakdown
Y. Shiotani, K. Shimomura, T. Shimizu and S.
Shingubara, Kansai Univ. Japan

Nanomaterials
12D-11-61
Distinctive Feature of Ripening During the
Growth Interruption of InGaAs Quantum
Dot Epitaxy using Bi as a Surfactant
H. Okamoto 1, T. Tawara 2, K. Tateno 2,
H. Gotoh 2, H. Kamada 2 and T. Sogawa 2, 1
Hirosaki Univ. and 2 NTT, Japan

12D-11-64
Research of Silicon Quantum Dots from
Hydrogenated Silicon Rich Nitride Film
P.L. Li 1, C.W. Liu 2, C. Gau 1 and B.T. Dai 3, 1
National Cheng Kung Univ., 2 National Yunlin
Univ. of Sci. and Technol., and 3 National Nano
Device Labs., Taiwan

12D-11-60
Geometry Dependencies of Switching
Characteristics of Anodic Porous Alumina
for ReRAM

S. Otsuka 1, R. Takeda 1, T. Shimizu 2,
S. Shingubara 2, K. Makihara 3, S. Miyazaki 4,
T. Watanabe 1, Y. Takano 1, and K. Takase 1, 1
Nihon Univ., 2 Kansai Univ., 3 Hirosima Univ.
and 4 Nagoya Univ., Japan

12D-11-62
Effect of Silicon Doping on the
Photoluminescence and PhotoreflectanceSpectra of Catalyst Free MBE-VLS Grown
GaAs Nanowires
A. Suzuki 1, T. Mori 1, A. Fukuyama 1, T. Ikari 1,
J.-H. Paek 2 and M. Yamaguchi 2, 1 Univ. ofMiyazaki and 2 Nagoya Univ., Japan

12D-11-65
Ab Initio Calculation of Eu doped β-SiAlON
with a Semilocal Exchange-Correlation
Potential
D.S. Yoo and Y.-C. Chung, Hanyang Univ.,
Korea

12D-11-67
Deposition of Glass Nano Particles byElectrospinning and Sol-Gel Process

12D-11-68
Synthesis of Gold Nanomaterials via
Pulsed Proton Beam Irradiation

K. Uchida, A. Nakano, A. Hotta, K. Hishida and
N. Miki, Keio Univ., Japan

Y.-J. Kim 1 and J.H. Song 2, 1 Chungnam
National Univ. and 2 Sunchon National Univ.,
Korea

-14-

12D-11-63
Determination of Exciton Binding Energy of
GaInNAs
Quantum
Wells
bya
Piezoelectric Photo-thermal Spectroscopy
comparing with a Photo-reflectance and a
Photoluminescence Measurements
K. Kashima 1, A. Fukuyama 1, K. Sakai 1,
H. Yokoyama 1, M. Kondow 2 and T. Ikari 1, 1
Univ. of Miyazaki and 2 Osaka Univ., Japan

12D-11-66
Optical and Electrical Properties of Particle
Composite Thin Films deposited in SiH4/H2
and N2 Multi-Hollow Discharges

G. Uchida 1, M. Sato 1, Y. Kawashima 1,
K. Yamamoto 1, K. Nakahara 1, D. Yamashita 1,
H. Matsuzaki 1, K. Kamataki 1, N. Itagaki 1,
K. Koga 1, M. Shiratani 1 and M. Kondo 2, 1
Kyushu Univ. and 2 AIST, Japan

12D-11-69
Unipolar Resistive Switching Behavior in
Ru/Dy2O3/TaN Structure for Nonvolatile
Memory Applications
T.-M. Pan, Y.-H. Shao, C.-H. Lu and C.-Y. Chou,
Chang Gung Univ., Taiwan

12D-11-70
Effect of Oxygen Vacancy on Electronic
Properties at LaAlO3/SrTiO3 Interface :Ab
Initio Calculations
H. Park, H.C. Choi and Y.-C. Chung, Hanyang
Univ., Korea

12D-11-73
Surface Modification of Ferromagnetic L1o
FePt
Nanoparticles
for
BiologicalApplications

12D-11-71
Upconverted Emission in Doubly Doped
KNbO3 Phosphors

12D-11-72
Combinatorial Investigation of ZrO2-based
Dielectric Materials for DRAM Capacitors

T.-H. Kim 1, D.-J. Kim 1, W.-Y. Jang 1, A.Y. Moon
1, K.-S. Lim 1 and I.-B. Sohn 2, 1 Chungbuk
National Univ. and 2 Gwangju Inst. of Sci. andTechnol., Korea

Y. Kiyota 1,2, Y. Iwashita 1,2, K. Itaka 3,
T. Adachi 2, T. Chikyow 2 and A. Ogura 1,4, 1
Meiji Univ., 2 NIMS, 3 Univ. of Tokyo and 4
JST-CREST, Japan

12D-11-74
Development of Quantum Dot Biosensor
via FRET System to Detect the Dopamine

12D-11-75
Nanoporous Silicon Alcohol Vapor Sensor

C.H. Seo and J.S. Kim, Kyungwon Univ., Korea

N. Atiwongsangthong, King Mongkut's Inst. ofTechnol. Ladkrabang, Thailand

12D-11-77
Structure, Conductance, and Strength ofSilver Wires of Single-atom-Width by In
Situ High-resolution Transmission Electron
Microscopy

12D-11-78
Local Structural Characterization forElectrochemical Reaction of Lithium into
Nano-sized Cobalt Oxides with X-ray
Absorption Spectroscopy

H. Masuda and T. Kizuka, Univ. of Tsukuba,
Japan

J.Y. Kim and H.C. Choi, Chonnam National
Univ., Korea

A.W. Indrianingsih and Y. Einaga, Keio Univ.,
Japan

12D-11-76
Molecular Hydrogen Adsorption on Li
Metal in Covalent Organic Framework - 5:
Ab initio Investigation
H.-L. Park and Y.-C. Chung, Hanyang Univ.,
Korea

12D-11-79
Improvement of BTEX Adsorption using
Silylated RH-MCM-41 synthesized from
Rice Husk Silica

12D-11-80
Paramagnetic Relaxation Properties ofSize-controlled Sepia Ink Particles
dispersed in Water

T. Areerob 1, N. Grisdanurak 2 and S.
Chiarakorn 1, 1 King Mongkut's Univ. of Technol.
Thonburi and 2 Thammasat Univ., Thailand

T. Matsuura 1, Y. Shimoyama 2, T. Kobayashi 3,
Y. Taya 3 and T. Ueno 4, 1 Hokkaido Univ. of
Education and 2 Japan Atomic Energy Agency,
3 Hokkaido Industrial Technol. and 4 Hakodate
National College of Technol., Japan

Nano-Tool
12D-11-81
Application of Void Cap-shaped Metal
Nano-shells as Artificial Nano-space for
Biomolecular Reactions

12D-11-82
Grating Pitch Measurement beyond theDiffraction Limit with a Modified Laser
Diffractometry

H. Kim 1, M. Hayashi 1, H. Terazono 1, H. Takei
1,2 and K. Yasuda 1,3, 1 Kanagawa Academy of
Sci. and Technol., 2 Toyo Univ. and 3 Tokyo
Medical and Dental Univ., Japan

S.P. Pan 1,2, T.S. Liu 1, M.J. Tsai 1 andH.C. Liou 2, 1 National Chiao Tung Univ. and 2
ITRI, Taiwan

12D-11-84
Multi Ion Beam Fabrication of Micro Line
Patterns

12D-11-85
Sustained Mechanical Self-oscillation of
Cantilevered Carbon Nanotube by Phase
Locked Loop with Opt-mechanical
Heterodyne

T.-G. Kim, B.-K. Min, Y.-J. Kim and S.J. Lee,
Yonsei Univ., Korea

12D-11-83
Method for Determining the Angle of 2D
Nanoscale Pitch Grating
S.P. Pan 1,2, M.J. Tasi 1, T.S. Liu 1 andH.C. Liou 2, 1 National Chiao Tung Univ. and 2
ITRI, Taiwan

12D-11-86
Signal Processing using KL Expansion for
Wafer Focus Measurement in Lithography
S. Oishi, T. Miyashita and H. Ina, Canon, Japan

A. Yoshinaka 1, T. Arie 1,2 and S. Akita 1,2, 1
Osaka Pref. Univ. and 2 JST-CREST, Japan

Nanoimprint, Nanoprint and Rising Lithography
12D-11-87
12D-11-88
Fabrication and Characterization of SiOx Profile Control for Patterning Glass
Moth-eye Structure by Room-temperature Microlens Array by Imprinting Process
L.K. Chen, Y.M. Hung and C.K. Sung, National
Nanoimprint using HSQ
Y. Kang 1,2, M. Okada 1,2,3, K. Kanda 1,2,
Y. Haruyama 1,2 and S. Matsui 1,2, 1 Univ. of
Hyogo, 2 JST-CREST and 3 JSPS, Japan

Tsing Hua Univ., Taiwan

12D-11-90
8-inch-quartz Mold fabricated by KrF
Double Patterning/Exposure

12D-11-91
Fabrication and Piezoelectricity of Highly
Ordered Pb(Zr0.3,Ti0.7)O3 Nanowire Arrays

A. Kemmochi, S. Yokoyama, T. Isano, K. Asanoand Y. Kaneda, Canon, Japan

Z.-K. Shen 1, Z.-H. Chen 1, M.-C. Chen 1,
A.-Q. Jiang 1, Z.-J. Qiu 1, X.-P. Qu 1, Y.-F. Chen
2 and R. Liu 1, 1 Fudan Univ., China and 2
Rutherford Appleton Lab., UK

12D-11-89
Enhancement of Light Extraction Efficiency
of GaN based Light-emitting Diode by ZnO
Sol-gel Direct Patterning
S.-H. Lee, K.-J. Byeon, H. Park, J.-Y. Cho and
H. Lee, Korea Univ., Korea

12D-11-92
FabricationofAntireflective
Subwavelength Gratings on the End Facesof Single Mode Optical Fibers using UV
Nanoimprint Lithography
M. Okochi, Y. Kanamori and K. Hane, Tohoku
Univ., Japan

12D-11-93
Micro Patterning of TiO2 by Nanoimprint for
Solar Devices

12D-11-94
Investigation of Pattern Collapse Defects in
Nanoimprint Lithography

12D-11-95
Observation of Imprinting Process using
Particle Image Velocimetry

N. Hoto 1, M. Watanabe 2,3, S. Arimura 2,
H. Kawata 1 and Y. Hirai 1, 1 Osaka Pref. Univ.,
2 Rohm and 3 OKI Semiconductor, Japan

Y. Sekiguchi, Y. Kawamura, D. Muto,
K. Kobayashi and T. Azuma, Toshiba, Japan

Y.M. Hung, C.Y. Huang, T.H. Lu and C.K. Sung,
National Tsing Hua Univ., Taiwan

12D-11-96
Optical Property and UV Nanoimprinting of
ZrO2-nanoparticles/photopolymer
Composites

12D-11-97
Adhesion
Force
Measurement
by
Scanning Probe Microscopy under
Pentafluoropropane Gas Atmosphere12D-11-98
Mechanical Characteristic and Modeling of
UV Curable Resist for UV Nanoimprint

S. Kudo, K. Nagase, S. Kubo, O. Sugihara and
M. Nakagawa, Tohoku Univ., JapanM. Okada 1,4,5, M. Iwasa 2, Y. Haruyama 1,4,
K. Kanda 1,4, H. Hiroshima 3,4 and S. Matsui
1,4, 1 Univ. of Hyogo, 2 SII Nanotechnol., 3
AIST, 4 JST-CREST and 5 JSPS, Japan-15-

R. Suzuki 1,4, A. Horiba 1,4, T. Ohsaki 2,
A. Sekiguchi 3 and Y. Hirai 1,4, 1 Osaka Pref.
Univ., 2 Toyo Gosei, 3 Litho Tech Japan and 4
JST-CREST, Japan

12D-11-99
Degradation of Perfluorotrichlorosilane
Antisticking Layers and the Impact on
Bonded UV-nanoimprint Molds, Mold
Cleaning and UV-nanoimprinting

12D-11-100In-situ Measurement of Adhesion ForcebetweenFluorinatedSelf-assembled
Monolayer and UV Nanoimprint Resin byscanning Probe Microscopy

12D-11-101
Study on Nanoimprint Formability for the(CH2)n Polymer Material with All-atomMode by Molecular Dynamics and Parallel
Computation

R. Kirchner, L. Teng, B. Lu and W.-J. Fischer,Technische Univ. Dresden, Germany

M. Okada 1,4,5, M. Iwasa 2, Y. Haruyama 1,4,
K. Kanda 1,4, K. Kuramoto 1, M. Nakagawa 3,4
and S. Matsui 1,4, 1 Univ. of Hyogo, 2 SII
Nanotechnol. 3 Tohoku Univ., 4 JST-CREST and
5 JSPS, Japan

Q.-C. Hsu, Y.-T. Lin and D.-C. Chou, National
Kaohsiung Univ. of Applied Sci., Taiwan

12D-11-103
Salivary Monitoring of Influenza Virus
using
Printable
Photonics
Technology-based
FlexibleTwo
Dimensional Photonic Crystal

12D-11-104
FET Biosensor with Olfactory Neural Cellfor Real-time Diagnosis of COPD

Bio MEMS, Lab on a Chip
12D-11-102
Development of a Wireless Love Wave
Biosensor Platform for Multi-functional
Detection
T. Song, C. Lim, S. Song, H.C. Youn and K. Lee,
Ajou Univ., Korea

12D-11-105
A Tunable Microchip Design for
Solvent-based
Bondingof
PMMA
Substrates by Capillary Force Inequality
J. Min, H. Yun, T.G. Park and D.-C. Han, Seoul
National Univ., Korea

12D-11-108
Proposal of Stacked Electrodes
Multiplex Neural Interface

forM. Yoshida 1, Y. Hirose 1, Y. Ukita 1, K. Mabuchi
2 and Y. Utsumi 1, 1 Univ. of Hyogo and 2 Univ.
of Tokyo, Japan

T. Endo 1, H. Tamura 2, N. Okuda 2, Y. Yanagida
1, S. Tanaka 2 and T. Hatsuzawa 1, 1 Tokyo Inst.
of Technol. and 2 SCIVAX, Japan

12D-11-106
A Programmable Dielectrophoretic Chip for
Cell Manipulations

12D-11-107
Three-dimensional Microfluidics Device
using Centrifugal Force

C.H. Chuang 1, Y.W. Huang 1, Y.M. Hsu 1,
Y. T. Wu 1 and F.B. Hsiao 2, 1 Southern Taiwan
Univ. and 2 National Cheng Kung Univ., Taiwan

T. Azeta 1, Y. Ukita 3, Y. Hirose 2, S. Kondo 1
and Y. Utsumi 1, 1 Univ. of Hyogo, 2 Inst. for
Molecular Sci. and 3 JAIST, Japan

12D-11-109
High-sensitive
Enzyme-linked
Immunosorbent
Assayin
Threedimensional Lab-on-a-CD

12D-11-110
Controlled DNA Translocation through
EP/DEP manipulated Virtual Nano-pore

T. Azeta 1, Y. Ukita 2, Y. Hirose 3, S. Kondo 1
and Y. Utsumi 1, 1 Univ. of Hyogo, 2 JAIST and
3 Inst. for Molecular Sci., Japan

12D-11-111
Localized Electroporation to Single Cell on
Transparent Electrode Chip

12D-11-112
A Chemical and Biological Acoustic Sensor
based on a GaN Membrane

S.-C. Chen 1 ,C.-J. Chang 1, T.-J. Chen 1 andF.-G. Tseng 1,2, 1 National Tsing Hua Univ. and2 Academia Sinica, Taiwan

A.K. Pantazis 1,2, E. Gizeli 1,3 andG. Konstantinidis 2, 1 Univ. of Crete and 2
IESL-FORTH, Greece

12D-11-114
Real-time Colorimetric Detection of Free
Chlorine and pH in Micro-fluidic Channel
for Water-quality Monitoring System

12D-11-115
Bonding-less Fabrication of Threedimensional Silica Microchannels using
Two-photon Microfabrication and Floc
Casting

S.H. Kim, J.C. Choi and S.H. Kong, Kyungpook
National Univ, Korea

M. Inada, J. Tatami and S. Maruo, Yokohama
National Univ., Japan

12D-11-117
Demonstration of Three-dimensional DNA
Trapping by using Electric Force andHydrodrag Force Field

12D-11-118
Plasma Proteins Process on the Surface
Properties of Microstructures for Artificial
Vascular Graft in Human Endothelial Cells

Y. Ukita, L. Mouez, Y. Tomizawa and
Y. Takamura, JAIST, Japan

T.-K. Tsai 1,2, T.-L. Chang 2, J. Huang 1,2,
C.-H. Lee 2, Y.-H. Kuo 1, H.-P. Yang 1 andC.-H. Liu 1, 1 National Tsing Hua Univ. and 2
ITRI, Taiwan

12D-11-120
Enhanced Fluorescence by Control ofSurface Area on Plastic Bio-chip

12D-11-121
FabricationofThree-dimensional
Bioceramic Scaffolds using a Molding
TechniquebasedonMicrostereolithography and Ceramic Slurry

D.-J. Kim, J.-H. Lee, S.-H. Cho and J.-G. Park,
Hanyang Univ., Korea

M.-S. Kim 1, W.-J. Cho 1, J.-Y. Choi 2 and J.-O.
Lim 2, 1 Kwangwoon Univ. and 2 Kyungpook
National Univ., Korea

T. Torii, M. Inada and S. Maruo, Yokohama
National Univ., Japan

C.-J. Chang 1, P.-C. Wang 1 and F.-G. Tseng
1,2, 1 National Tsing Hua Univ. and 2 Academia
Sinica, Taiwan

12D-11-113
A Parametric Study of Generation of
Monodisperse Clay-PNIPAam Embolic
Microspheres
using
Hydrodynamic
Focusing Microfluidic Device
K. Han 1, S. Lee 1, M.J. Kang 1, J. Lee 1, J. Lee
1, B.K. Kwak 1 and D.S. Kim 1,2, 1 Chung-Ang
Univ. and 2 POSTECH, Korea

12D-11-116
Three-dimensional
Centrifugal
Microfluidics for Environmenatal Analysis
Y. Ukita 1, T. Azeta 2, S. Kondo 2, C. Kataoka 3,
S. Yusa 1, T. Masahiro 1 and Y. Utsumi 1, 1
JAIST, 2 Univ. of Hyogo and 3 Carbuncle
Bio-scientech, Japan

12D-11-119
High-density Protein Array Patterning
using Cell-free Coupled Transcriptiontranslation System and Intaglio Printing
MethodJ. Moriyasu 1, M. Biyani 1,2, T. Akagi 1,2 andT. Ichiki 1,2, 1 Univ. of Tokyo and 2 JST-CREST,Japan

12D-11-122
Self-Assembled
Large-scaleDNA
Microarray Chip using Single-molecule
ePCR and Microreactor Array Technology
S. Sato 1, M. Biyani 2,3, T. Akagi 2,3, Y. Yoshida
1 and T. Ichiki 2,3, 1 Toyo Univ., 2 Univ. of Tokyoand 3 JST-CREST, Japan

12D-11-123
Partly Disposable Lab-on-a-Chip Systemusing Electromagnetically-drive Hydraulic
ValvesK. Miyamoto, K. Kawai and S. Shoji, Waseda
Univ., Japan

Microsystem Technology and MEMS
12D-11-124
Effect of Gas Medium and Cavity Volume
on the Sensitivity of a Convection-based
Accelerometer
D.W. Jung, J.C. Choi and S.H. Kong,
Kyungpook National Univ., Korea

12D-11-125
Highly-sensitive
Hexagonal Gyroscope

Rigidly-coupled

Z. Jin, M. Hirata and K. Suzuki, Ritsumeikan
Univ., Japan-16-

12D-11-126
Development of Wireless Passive Surface
Acoustic Wave (SAW) Gyroscope withStanding Wave Mode
H. Oh, H. Lee, S.S. Yang and K. Lee, Ajou Univ.,
Korea

12D-11-127
Characteristics
ofa
MonolithicallyIntegrated Micro Displacement Sensor

12D-11-128
Air Convection-based Tilt Sensor with
Minimized Temperature Fluctuation

12D-11-129
Doubled Optical Path Length for Photonic
Bandgap Fiber Gas Cell using Micromirror

T. Takeshita 1, N. Morita 1, H. Ando 2 and
R. Sawada 1, 1 Kyushu Univ. and 2 Fuzzy Logic
Systems, Japan

J.C. Choi and S.H. Kong, Kyungpook National
Univ., Korea

X. Li, J. Liang and T. Ueda, Waseda Univ.,
Japan

12D-11-130
Piezoelectric-actuated MEMS Micromirror
Characteristics
DependenceonTemperature Around Resonant Frequency

12D-11-131
Improved Performances of MEMS
Acoustic Energy Harvester Fabricatedusing Sol/Gel Lead Zirconate Titanate ThinFilm

12D-11-132
A Novel Fabrication Process for the Tensile
Strained Resonators

N. Morita 1, T. Takeshita 1, T. Kobayashi 2,
R. Maeda 2, T. Itoh 2 and R. Sawada 1,
1 Kyushu Univ. and 2 AIST, JapanK. Kuroda, R. Kometani, S. Warisawa and
S. Ishihara, Univ. of Tokyo, Japan

S. Kimura, T. Sugou, S. Tomioka, T. IIzumi,
K. Tsujimoto and Y. Nishioka, Nihon Univ., Japan

12D-11-133
Adsorption of CO2 on Amine-functionalized
Anodic Aluminum Oxide Microcantilevers

12D-11-134
Fabrication of Focus Variable Fluidic
Microlens using Single Casting

12D-11-135
Evanescent-Wave Driven Microrotors
produced by Two-photon Microfabrication

D. Lee, Y. Jin, M. Lee and S. Jeon, POSTECH,
Korea

T.-D. Dang, C.-W. Park and G.-M. Kim,
Kyungpook National Univ., Korea

S. Murakami, M. Ikegame, K. Okamori and
S. Maruo, Yokohama National Univ., Japan

12D-11-136
Fabrication of Multi-Focus Micro-lens Arrayfor 3D Displays

12D-11-137
MEMS Test Socket for BGA IC Package

12D-11-138
Integration Via Structure with Electroless
Nickel Plating Process to Fabricate
CMOS-MEMS Probe Chip

Y.-H. Kim, K.-W. Park and H.-R. Kim,
Kyungpook National Univ., Korea

S. Kim 1, D. Gong 1, C. Cho 1, J. Nam 2, B. Kim
3 and J. Lee 1, 1 Kyungpook National Univ., 2
Lumsonic and 3 Catholic Univ. of Daegu, Korea

12D-11-139
Eutectic Solder Bonding for Fine-pitched
MEMS Probe Card
B.-H. Kim 1, B.-H. Kum 2 J.-B. Kim 2, D. Jung
3, C. Cho 3 and J. Lee 3
1 Catholic Univ. of Daegu , 2 UniTest and 3
Kyungpook National Univ., Korea-17-

K.-Y. Lee, J.-T. Huang, H.-J. Hsu, C.-K. Chen
and T.-C. Tsai, National Taipei Univ. of Technol.,Taiwan