Final Call for Paper

MNC 2010
23rd International Microprocesses
and Nanotechnology Conference

November 9-12, 2010
Rihga Royal Hotel Kokura, Fukuoka, Japan

Call for Papers and Final Announcement
PROFILE
Microprocess and nanotechnology play an important role of technical backbone for constructing the advanced information
communications society with ubiquitous networks of the 21st century. The MNC conference is now in its 23rd year and is intended toprovide a forum for discussing lithographic science and process technology using photon, electron, ion, other energetic particles andnanomaterials. This conference covers not only their applications to micro- and nano-structure fabrication and related physics anddevices, but also their fusion applications with other fields like bio, medical, information, and communication technology.
1-1:DUV, EUV Lithography and Metrology
This session focuses on DUV, EUV, Immersion Lithography, and Computational Lithography including OPC, SMO, DFM. In
addition, Metrology such as SEM and Scatterometry, and Mask related topics are included.
1-2:Electron- and Ion-Beam Lithography
Electron and ion beam technologies such as lithography, metrology, inspection and repair tools. Other related technologies using
charged particle beams are also welcome.
1-3:Resist Materials and Processing
Resist materials(EUV, immersion, double patterning, DUV, EB, X-ray, multilayer, inorganic, molecular glass etc.), antireflective
coatings, polyimide, adhesive, and other materials related to lithography. resist processes(PEB，development, rinse，resist
removal, etching etc.), characterization, line edge roughness, trade-off problem, outgassing, modeling and simulation of resist
process (exposure, acid diffusion, development etc.). materials and processes for the production of flat-panel display, photonics
devices, and electronics packaging.
2-0 Nanocarbons
Nanocabons, such as carbon nanotube, fullerene, graphene and nanomaterials containing graphite and diamond, and their related
technologies including growth, fabrications, nanoelectronics, nanophotonics, nanomechanics, devices and integration.
2-1:Nanodevices
Nanodevices and related technologies targeting more Moore, more than Moore and beyond CMOS; next-generation Si andcompound semiconductor-based FETs, graphene FETs, 1D FETs such as nanowire FETs and carbon nanotube FETs, quantum
dot devices, and all other nanodevices utilizing nanostructures and nanomaterials such as inorganics, organics, and molecules.
Light emitting diodes, lasers, and detectors promising for optical interconnection and other advanced applications are included.
Solar cells, thermoelectric elements, piezoelectric elements, and all other energy conversion devices utilizing nanostructures andnanomaterials are also welcome.
2-2:Nanofabrication
Fabrication of nanostructures. Fabrication techniques such as scanning probe techniques, self-organizing techniques, etc. Physics
and chemistry in nanofabrication processes. Etching, deposition, and related subsurface processing using photon, electron- andion-beams, plasma, and thermal energy. Emerging technologies are also welcome.
2-3:Nanomaterials
Theory, properties, characterization and application of nanomaterials such as semiconductor materials, functional oxides, layered
structure, quantum dots, nano-particles, nanowires, and organic, molecules. Materials prepared by self-organized or bottom-up
approach are also included.
2-4:Nano-Tool
Nano-electromechanical system (NEMS), Nano-mechanics, Nanometrology, Metrology and repair for nanosystem, Novelobservation and fabrication methods based on microscopic techniques, such as scanning probe microscopy (SPM), scanningelectron microscopy (SEM) and focused ion beam (FIB).
3:Nanoimprint, Nanoprint and Rising Lithography
This session focuses nanoimprint system, process, material, applications and related inspection and metrology. Other novel
nano-patterning technologies are also included.
4:Bio MEMS, Lab on a Chip
Micro/Nano Electromechanical Systems (M/NEMS) are now widely applied to Chemical, Biochemical, Medical and Environmental
fields, and a new research field called μ-TAS or Lab-on-a-Chip is expanding. Fusion of microelectronic devices with materials andmethods in those fields is expected to open up new scientific and business areas. Papers are solicited in the following areas (butnot limited): (1) MEMS/NEMS devices for Chemical, Biochemical, Medical and Environmental fields, (2) μ-TAS and Lab-on-a-chip,(3) Bio-chips for DNA, proteins and cells, (4) Fabrication technologies for (1), (2), (3).
5:Microsystem Technology and MEMS
Technologies for fabrication, design, and characterization of micro electromechanical systems (MEMS) which include sensors,
microactuators, optical devices, RF devices, etc. Integration and packaging techniques are also welcome.
INVITED SPEKAERS
PLENARY TALKS
Masayoshi Esashi(Tohoku Univ.)
Michael Roukes(Kavli Nanoscience Inst.California Inst. of Technol.)Swaminathan Sivakumar (INTEL)SPECIAL KEYNOTE LECTURE
Zhong Lin Wang(Georgia Institute of Technology)
Burn Lin（Senior director of micropatterning division at TSMC)SESSION INVITED SPEAKERS
1-1:DUV, VUV, EUV Lithography and Metrology
Ichiro Mori (Selete)
1-3:Resist Materials and Processing
Vivek M. Prabhu (NIST)
2-2:Nanofabrication
Kuniyuki Kakushima (Tokyo Inst. of Technol.)3:Nanoimprint, Nanoprint and Rising Lithography
Hong Yee Low (IMRE)
5:Microsystem Technology and MEMS
Kazusuke Maenaka (Univ. of Hyogo)
SPECIAL SYMPOSIUM[A] Efficient Litho Technologies – Holding the Keys to “Green Lithography”
Organizers: S. Nagahaｒa (Renesas Electronics) and T. Sato (Toshiba)
TECHNICAL SEMINAR in JAPANESE
Technical Seminar on " Graphene"
Organizers: J. Fujita (Univ. of Tsukuba) and S. Akita (Osaka Pref. Univ.)
YOUNG AUTHORS TRAVEL ASSISTANCE
Young authors, under age 33, who will present paper at MNC2010 are able to apply for Young Authors Travel Assistance. It supports apart of their travel expense within a limited amount of budget. The support amount depends on the number of persons accepted. It is theconference policy that the persons who will receive the assistance are asked to help the session progress in terms of timekeeping,speaker’s slide preparation etc. Those who are interested in application may contact the MNC 2010 Secretariat to get the application
form no later than 15th September.
SUBMISSION of ABSTRACT
Please visit our Web Site after middle of June, 2010. http://imnc.jp/
Abstract Deadline: June 30, 2010
1. INTRODUCTION
This describes instructions for the preparation of a camera-ready abstract. Prospective authors are encouraged to submit a 2-page
abstract. The abstract must clearly state the purpose, achievement and significance of the work. Please note that the most common
cause of rejection of submitted papers is a lack of specific results, e.g. figures and tables, and of the description on
experimental/theoretical procedures. The abstract must be prepared following the instruction because it is printed by the photo-offset
method. The abstracts are published as the Digest of papers, which will be available for registrants at the conference.
2. INSTRUCTION
The abstract should be neatly typed on A4-size or US letter size (8.5” x 11”) plain white sheets. Type the title on the first line, authors’name(s) on the third line and addresses on the fourth line. Title, author(s) and address(es) should be typed centered. Begin the texts twolines below the last line of the title/author section. The second page should be used for indicating figures, tables and photographs.
Caption should be typed underneath the figure and above the table.
Additional typing guidelines are summarized in Table 1.
Sectioning is not always required and is optional.
3. SUBMISSION
Submit the abstract in a PDF format with the copyright form.
Table 1. Typing guidelines for the abstract
PDF File: Please avoid setting up user password and master password in the PDF files. A PDF file must be smaller than 3MByte.
Line spacing: single-spaced.
Format: An A4-size or a 21.6cm×28cm is preferable. The first page must include the title of the paper, author(s), affiliation(s), address,e-mail address, and article text.
Font Size: 11 - 12 point font is recommended for text.
Character: Times-Fonts Family and Helvetica-Fonts Family are recommended. As for Symbolic Characters such as (α) (μ), please use
Symbol-Fonts Family. DO NOT use two byte characters and Asian Fonts, e.g., Japanese, Korean, and Chinese characters, MS Gothic,
MS Mincho, Ryumin, Batang etc.
Late News Paper Deadline: September 15, 2010
JJAP PROCEEDINGS
Authors of accepted papers are recommended to submit full-length manuscripts to Japanese Journal of Applied Physics (JJAP). Papers
passed through the standard reviewing procedures of JJAP will be published in a special issue. This issue will be delivered to the participants
as the conference proceedings. The authors (or their institution) are requested to pay the publication charge for the JJAP special issue(Microprocesses and Nanotechnology) when the paper is accepted.
CONFERENCE AWARDS
Conference awards will be given to The Outstanding Paper(s), The Most Impressive Poster(s), The Most Impressive Paper, and The
Young Author's Award. The outstanding paper(s) will be selected from the paper published in the JJAP special issue (Microprocesses
and Nanotechnology). The most impressive paper is selected from oral presentations. The young author's award is selected from oral
and poster presentations. The most impressive poster(s) will be selected on the basis of participant's vote.
REGISTRATION
Code
Registration
Until October 20
FUL-1
Full Conference with Digest(USB), Proceedings and Banquet
JPY55,000
FUL-2
Full Conference with Digest(USB) and Proceedings (No Banquet)
JPY50,000
STU
Student Conference with Digest(USB), (No Proceedings, No Banquet)
JPY15,000
BQT
Banquet Ticket
JPY 5,000
EXHI / BITOR Technical Exhibitor for Full Conference
JPY20,000
Technical Seminar on November 9 in Japanese EXCEPT MNC 2010
ONLY TEC
JPY3,000
Participants and student
Technical Seminar in November 9 in Japanese (MNC 2010 Participants
TEC-FREE
Free
and Student)

On site Registration
JPY65,000
JPY60,000
JPY15,000
JPY 5,000
JPY20,000
JPY3,000FreeCOMMITTEE MEMBERS
Organizing Committee Members
T. Asano (Kyushu Univ.)
Chair
H. Yamaguchi (NTT)Vice Chair
K. Ishibashi (Riken)
H. Arimoto (AIST)
Members
A. Ishihama (Sharp)
R. Ebinuma (Canon)
S. Ishihara (Univ. of Tokyo)
K. Fujii ((Renesas Electronics))
M. Kameyama (Nikon)
T. Fukui (Hokkaido Univ.)
M. Komuro (NEDO)
N. Fukushima (Toshiba)
S. Matsui (Univ. of Hyogo)
K. Hane (Tohoku Univ.)
I. Mori (Selete)
N. Hayashi (Dai Nippon Printing)Y. Ochiai (Toyo Gosei)
T. Horiuchi (Tokyo Denki Univ.)
Advisory Members
Y. Horiike (NIMS)
H. Ahmed (Cambridge Univ.)
O. Joubert (CRS-LTM)
Y. Aoyagi (Ritsumeikan Univ.)
C.Y. Chang (Natl. Nano Device Lab.) D. Kern (Univ. of Tubingen)
H.W.P. Koops (NaWoTec GmbH)
S.Y. Chou (Princeton Univ.)
J. Melngailis (Univ. of Meryland)
E. Dobisz (Hitachi San Jose Res.)
S.-K. Min (Kyung Hee Univ.)
F. Fortagne (Leica Microsystem)
A.R. Neureuther (UC Berkeley)
K. Gamo (Osaka Univ.)
R.F.W. Pease (Stanford Univ.)
M. Gentili (Inovation & Technol.
K. Ronse (IMEC)Management)
F. Schellenberg (Widerkehr and
S. De Gendt (IMEC)
Associates)
L.R. Harriott (Univ. of Virginia)
Steering Committee Members
Chair
T. Itani (Selete)
Vice Chair
Y. Miyamoto (Tokyo Inst. of Technol.)T. Meguro (Tokyo Univ. of Sci.)
Y. Ono (NTT)S. Akita (Osaka Pref. Univ.)
H. Yamashita (HOYA)
M. Arikawa (Frontier Carbon)
J.H. Ahn (Hanyang Univ.)
O.H. Kim (POSTEC)
Program Committee Members
Chairperson:
T. Meguro (Tokyo Univ. of Sci.)
Vice-Chairpersons: S. Akita (Osaka Pref. Univ.)
T. Kozawa (Osaka Univ.)
1-1:DUV, EUV Lithography and Metrology
Section Head:
T. Sato (Toshiba)
Sub Head:S. Nagahaｒa (Renesas Electronics)
J. Ahn (Hanyang Univ.)
Members:
H. Futatsuya (Fujitsu Microelectronics)
M. Shibuya (Tokyo Polytechnic Univ.)
J. Kitano (Tokyo Electron) )J. Miyazaki (ASML)
1-2:Electron- and Ion-Beam Lithography
Section Head:
Y. Miyamoto (Tokyo Inst. of Technol.)
Sub Head:
J. Yanagisawa (Univ. of Shiga Pref.)K.-Y. Tsai (National Taiwan Univ.)
Members:
M. Kotera (Osaka Inst. of Technol.)
H. Nozue (Nuflare)
K. Ogino (Fujitsu)
A. Yamada (Advantest)
1-3:Resist Materials and Processing
Section Head:
T. Kozawa (Osaka Univ.)
Sub Head:
H. Oizumi (Selete)
Members:
T. Azuma (Toshiba)
Y. Hirai (JSR)
H. Kudo (Kanagawa Univ.)
S. Masuda (Fuji Film)
K. Nakano (NEC)2-0:Nanocarbon
Section Head:
M. Nagase (Tokushima Univ.)
Sub Head:
K. Maehashi (Osaka Univ.)
Members:
J. Fujita (Univ. of Tsukuba)
H. Fukidome (Tohoku Univ.)
K. Hirahara (Osaka Univ.)
T. Kaneko (Tohoku Univ.)

S. Okazaki (EUVA)
S. Sato (Fujitsu Labs.)
S. Shoji (Waseda Univ.)
S. Tagawa (Osaka Univ.)
Y. Todokoro (Nara Inst. Sci. &Technol.)
A. Tokui (Nikon)
S. Zaima (Nagoya Univ.)
R. Shimizu (IIAS)
C. Shih (ERSO/ITRI)
H.I. Smith (MIT)T. Sugano (Univ. of Tokyo)
M. Takai (Osaka Univ.)
S. Tedesco (Leti)
T. Tsurushima (Kyushu Univ.)
M. De Vittorio (Univ. of Salento)
M. Wang (China Academic Sci.)
J. Wiesner (Nikon Precision)
N. Yokoyama (Fujitsu Labs.)

K. Tohmezuka (Tokyo Electron)
T. Kozawa (Osaka Univ.)
N. Taneichi (Tokyo Ohka)
N. Samoto (JEOL)
A. Chen (ASML)
C.K. Sung (National Tsing Hua Univ.)

H. Mohri (DNP)
I. Yahiro (Nikon)
A. Yamaguchi (Hitachi)

J. Yamamoto (Hitachi)
Y. Yamamoto (SII Nanotechnology)
H. Yamashita (HOYA)

K. Nozaki (Fujitsu)
K. Okamoto (Hokkaido Univ.)
I. Takemoto (Sumitomo Chemical)
T. Yamaguchi (NTT)M. Nagashio (Univ. of Tokyo)
M. Ohfuchi (Fujitsu)
T. Takenobu (Waseda Univ.)
M. Tanemura (Nagoya Inst. of Technol.)2-1:Nanodevices
Section Head:
Sub Head:

Members:

Y. Ohno (Nagoya Univ.),
K. Nishiguchi (NTT)
T.-S. Chao(National Chiao Tung Univ.)
S. W. Hwang (Korea Univ.)
J.-T. Sheu (National Chiao Tung Univ.)
N. Banno (NEC)H. Ikeda (Shizuoka Univ.)

2-2:Nanofabrication
Section Head:
M. Masahara (AIST)Sub Head:
T. Hasegawa (NIMS)
Members:
T. Asahi (Osaka Univ.)
Y. Ishikawa (Univ. of Tokyo)
A. Kohno (Fukuoka Univ.)
T. Kobayashi (Riken)
T. Komeda (Tohoku Univ.)
2-3:Nanomaterials
Section Head:
T. Chikyo (NIMS)
Sub Head:
Y. Matsumoto (Tokyo Inst. of Technol.)Members:
T. Ishida (AIST)
M. Lippmaa (Univ. of Tokyo)
2-4:Nano-Tool
S. Akita (Osaka Pref. Univ.)
Section Head:S. Takahashi (Univ. of Tokyo)
Sub Head:
H. Ina (Canon)
Members:
M. Kitazawa (Olympus)
D.-W. Lee（Chonnam National Univ.)
G. Dai (Physikalisch-Technische)
3:Nanoimprint, Nanoprint and Rising Lithography
Section Head:
H. Hiroshima (AIST)Sub Head:A. Yokoo (NTT)F.-B. Hsiao (National Cheng Kung Univ.)
H. Lee (Korea Univ.)
F.-Y. Chang (National Taiwan Univ.)
Members:
Y. Hirai (Osaka Pref. Univ.)
A. Miyauchi (Hitachi)
M. Okinaka (Canon)
4:Bio MEMS, Lab on a Chip
Y. Takamura (JAIST)
Section Head:
Y. Murakami (Hiroshima Univ.)
Sub Head:
G.-B. Lee (Natioal Cheng Kung Univ.)
F.-G. Tseng (National Tsing Hua Univ.)
T. Horiuchi (NTT)Members:
H. Takei (Toyo Univ.)
5:Microsystem Technology and MEMS
Section Head:
T. Ikehara (AIST)Sub Head:
H. Takao (Kagawa Univ.)
J.-W. Hsieh (Asia Pacific Microsystems)
W. Fang (National Tsing Hua Univ.)
J. Shin (Kyungpook Univ.)
Members:
Y. Kanamori (Tohoku Univ.)
N. Miki (Keio Univ.)
T. Namazu (Univ. of Hyogo)

S. Kasai (Hokkaido Univ.)
T. Maemoto (Osaka Inst. of Technol.)

S. Shingubara (Kansai Univ.)
K. Takase (Nihon Univ.)
T. Hasunuma (Tsukuba Univ.)

T. Mano (NIMS)
T. Miyazawa (Univ. of Tokyo)

Y. Mitsui (Hitachi Hightechnologies)
M. Miyoshi (Univ. of Tokyo)
T. Ono (Tohoku Univ.)
M. Yasutake (SII Nano technol.）N. Sakai (Samsung Yokohama Res. Inst.))J. Taniguchi (Tokyo Univ. of Sci.)

Y. Miyahara (NIMS)

M. Sohgawa (Osaka Univ.)
D. Takamuro (Mitsubishi Electric)

Secretariat - 23rd International Microprocesses and Nanotechnology Conference (MNC 2010)
c/o Secretaryart Corporation
TEL::+81-3-3420-1800
Fax:+81-3-3420-1840
E-mail：secretariat@imnc.jp
MNC 2010 web：http://imnc.jp/