90 min.

95 min.

Centrair(NAGOYA)

2 min.

Shin Sapporo
Station

As of May 2009SHERATON SAPPOROHOTEL (Venue)

ARC CITY HOTEL

1 min.

JR Airport Train
27 min /JPY850(every 15-30 min.)

125 min.

Kansai International
Airport (KIX)

SHIN SAPPORO

Shin-Chitose Airport (Sapporo)

90 min.

Haneda Airport

75 min./JPY3,000

Airport Limousine

Narita International Airport(NARITA)

Fukuoka
International Airport(FUKUOKA)FUKUOKA

Shin-Chitose
AirportCentrair(NAGOYA)

NaritaInternational Airport(NARITA)Tokyo National
Airport(HANEDA)TOKYONAGOYA

KansaiInternational Airport
(KIX)

OSAKA

SAPPOROACCESS TO SAPPOROMNC 2009

22nd International
Microprocesses andNanotechnology Conference

November 16-19, 2009
Sheraton Sapporo Hotel
Sapporo, Japan

Call for Papers and Final Announcement
PROFILE

Microprocess and nanotechnology play an important role of technicalbackbone for constructing the advanced information communications
society with ubiquitous networks of the 21st century. The MNC
conference is now in its 22nd year and is intended to provide a forum fordiscussing lithographic science and process technology using photon,
electron, ion, other energetic particles and nanomaterials. Thisconference covers not only their applications to micro- andnano-structure fabrication and related physics and devices, but also theirfusion applications with other fields like bio, medical, information, andcommunication technology.

SCOPE AND TOPICS

Papers are being solicited on the following subjects.
1.Lithography and Related Technologies
1-1:DUV, EUV Lithography and Metrology
This session focuses on DUV, EUV, Immersion Lithography, andComputational Lithography including OPC, SMO, DFM. In addition,
Metrology such as SEM and Scatterometry is included.
1-2:Electron- and Ion-Beam Lithography
Electron and ion beam technologies such as lithography, metrology,
inspection and repair tools. Other related technologies using charged
particle beams are also welcome.
1-3:Resist Materials and Processing
Resist materials(EUV, immersion, double patterning, DUV, EB, X-ray,
multilayer, inorganic, molecular glass etc.), antireflective coatings,
polyimide, adhesive, and other materials related to lithography. resist
processes(PEB ， development, rinse ， resist removal, etching etc.)
characterization, line edge roughness, trade-off problem, outgassing,modeling and simulation of resist process (exposure, acid diffusion,development etc.). materials and processes for the production offlat-panel display, photonics devices, and electronics packaging.
2:Nanotechnology
2-1:Nanodevices
Nanodevices and related technologies targeting more Moore, more thanMoore and beyond CMOS; next-generation Si and compound semi
conductor-based FETs, graphene FETs, 1D FETs such as nanowire
FETs and carbon nanotube FETs, quantum dot devices, and all othernanodevices utilizing nanostructures and nanomaterials such as
inorganics, organics, and molecules. Novel-concept devices utilizing
nanostructures and nanophysics are also welcome.
2-2:Nanofabrication
Fabrication of nanostructures. Fabrication techniques such as scanningprobe techniques, self-organizing techniques, etc. Physics andchemistry in nanofabrication processes. Etching, deposition, and related
subsurface processing using photon, electron- and ion-beams, plasma,
and thermal energy. Emerging technologies are also welcome.
2-3:Nanomaterials
Theory, properties, characterization and application of nanomaterials
such as quantum dots, nano-particles, nanowires, carbon nanotubes,
fullerenes, organic, molecular, and biomaterials. Materials prepared by
self-organized or bottom-up approach are also included.
2-4:Nano-Tool
Nano-electromechanicalsystem(NEMS),
Nano-mechanics,
Nanometrology, Metrology and repair for nanosystem, Novelobservation and fabrication methods based on microscopic techniques,
such as scanning probe microscopy (SPM), scanning electron
microscopy (SEM) and focused ion beam (FIB).

-1-

3:Nanoimprint, Nanoprint and Rising Lithography
This session focuses nanoimprint system, process, material, applications
and related inspection and metrology. Other novel nano-patterningtechnologies are also included.
4:Bio MEMS, Lab on a Chip
Micro/nano electromechanical devices (M/NEMS) are now widely
applied to biochemical, medical and environmental fields and a newresearch field called μ-TAS or Lab. on a Chip is expanding. Fusion of
microelectronic devices with materials and methods in the biomedical
fields is expected to open up new scientific and business areas. Papers
are solicited in the following areas (but not limited): (1) MEMS/NEMS
devices for biomedical fields, (2) μ-TAS and Lab on a chip, (3)Bio-chips for DNA, proteins and cells, (4) Fabrication technologies.
5:Microsystem Technology and MEMS
Fabrication techniques, design, mechanical characterization of three
dimensional microstructures, and their applications to micromechanicalsystems, which include microwave and photonics devices, vacuum
microelectronics, novel sensors and actuators, etc.

SYMPOSIA[A]. Computational Lithography[B]. Graphene: Growth & Characterization
PLENARY TALKS

S. Wurm (SEMATECH)
A. Neureuter (Univ. of CA)

INVITED SPEAKERS (under negotiation)

DUV, EUV Lithography and Metrology Session
T. Uchiyama (NEC Electronics)
Electron and Ion Beam Lithography Session
H. Loeschner (IMS Nanofabrication)
Resist Materials and Processing Session
M. Shirai (Osaka Pref. Univ.)
Nanodevice Session
Y.-M. Lin (IBM)
Nanofabrication Session
T. Fukui (Hokkaido Univ.)
Nanomaterials Session
Y. Einaga (Keio Univ.)
I. Suemune (Hokkaido Univ.)
Nano-Tool Session
T. Funatsu (Univ. of Tokyo)
Nanoimprint, Nanoprint and Rising Lithography Session
H. Schift (Paul Scherrer Inst.)
Q. Xia (HP)
Symposium A. Computational Lithography
K. Lai (IBM)A. Erdmann (Fraunhofer)
T. Matsuyama (Nikon)
T. Takigawa (Brion Technologies)
L. Pang (Luminescent Technologies)
M. D. Smith (KLA-Tencor)
W. Demmerle (Synopsys)
Symposium B. Graphene: Growth & Characterization
C. Oshima (Waseda Univ.)
T. Seyller (FAU Erlangen-Nurnberg)
H. Hibino (NTT)T. Otsuji (Tohoku Univ.)
M. Nihey (Fujitsu)-2-

TECHNICAL SEMINAR in JAPANESE

Technical Seminar on "Fusion of Bio, Nano, and IT" (tentative)by Hokkaido University Global COE "The Formation of a Center for
Next Generation Information Technology that Supports Knowledge
Creation" and "Nanoimprint Technology " (tentative)

YOUNG AUTHORS TRAVEL ASSISTANCE

Young authors, under age 33, who will present paper at MNC2009 areable to apply for Young Authors Travel Assistance. It supports a part oftheir travel expense within a limited amount of budget. The support
amount depends on the number of persons accepted. It is the conference
policy that the persons who will receive the assistance are asked to help
the session progress in terms of timekeeping, speaker’s slide preparation
etc. Those who are interested in application may contact the MNC2009
Secretariat to get the application form no later than 15th September.

SUBMISSION of ABSTRACT
Please visit our Web Site after middle of June, 2009. http://imnc.jp/

Abstract Deadline: June 30, 2009
1. INTRODUCTION
This describes instructions for the preparation of a camera-ready abstract.
Prospective authors are encouraged to submit a 2-page abstract. The
abstract must clearly state the purpose, achievement and significance of
the work. Please note that the most common cause of rejection ofsubmitted papers is a lack of specific results, e.g. figures and tables, andof the description on experimental/theoretical procedures. The abstract
must be prepared following the instruction because it is printed by thephoto-offset method. The abstracts are published as the Digest of papers,
which will be available for registrants at the conference.
2. INSTRUCTION
The abstract should be neatly typed on A4-size or US letter size (8.5” x11”) plain white sheets. Type the title on the first line, authors’ name(s)on the third line and addresses on the fourth line. Title, author(s) andaddress(es) should be typed centered. Begin the texts two lines below thelast line of the title/author section. The second page should be used forindicating figures, tables and photographs. Caption should be typed
underneath the figure and above the table.
Additional typing guidelines are summarized in Table 1.
Sectioning is not always required and is optional.
3. SUBMISSION
Submit the abstract in a PDF format with the copyright form.
Table 1. Typing guidelines for the abstract
PDF File: Please avoid setting up user password and master password in
the PDF files. A PDF file must be smaller than 3MByte.
Line spacing: single-spaced.
Format: An A4-size or a 21.6cm×28cm is preferable. The first page
must include the title of the paper, author(s), affiliation(s), address,e-mail address, and article text.
Font Size: 11 - 12 point font is recommended for text.
Character: Times-Fonts Family and Helvetica-Fonts Family arerecommended. As for Symbolic Characters such as (α) (μ), please use
Symbol-Fonts Family. DO NOT use two byte characters and Asian
Fonts, e.g., Japanese, Korean, and Chinese characters, MS Gothic, MS
Mincho, Ryumin, Batang etc.

Late News Paper Deadline: September 15, 2009-3-

JJAP PROCEEDINGS
Authors of accepted papers are recommended to submit full-length
manuscripts to Japanese Journal of Applied Physics (JJAP). Papers passed
through the standard reviewing procedures of JJAP will be published in a
special issue. This issue will be delivered to the participants as theconference proceedings. The authors (or their institution) are requested to
pay the publication charge for the JJAP special issue (Microprocesses andNanotechnology) when the paper is accepted.

CONFERENCE AWARDS
Conference awards will be given to The Outstanding Paper(s), The Most
Impressive Poster(s), The Most Impressive Paper, and The Young
Author's Award. The outstanding paper(s) will be selected from the paper
published in the JJAP special issue (Microprocesses andNanotechnology). The most impressive paper is selected from oralpresentations. The young author's award is selected from oral and poster
presentations. The most impressive poster(s) will be selected on the basisof participant's vote.

REGISTRATION OFFICEJTB Global Marketing & Travel Inc. (JTB GMT) has been
appointed as the official registration office for the conference andwill handle registration and hotel accommodation.
JTB Global Marketing & Travel Inc.
Convention Center (CD102152-007)
2-3-11 Higashi-Shinagawa, Shinagawa-ku, Tokyo 140-8604 Japan
Phone: +81-3-5796-5445
Fax: +81-3-5495-0685
E-mail: mnc2009@jtb.jp

REGISTRATION
Until OctoberOn site15
Registration

Code

Registration

FUL-1

Full Conference with Digest,
Proceedings and Banquet

JPY
55,000JPY
65,000

FUL-2Full Conference with Digest andProceedings (No Banquet)

JPY
50,000JPY
60,000

STU

Student Conference with Digest(No Proceedings, No Banquet)

JPY
15,000JPY
15,000BQT

Banquet Ticket

JPY 5,000

JPY 5,000

EXHI
BITOR

Technical Exhibitor for Full
Conference
Technical
Seminaron
November 16 in Japanese
EXCEPT
MNC
2009
Participants and student
Technical
SeminarinNovember 16 in Japanese(MNC 2009 Participants andStudent)

JPY
20,000JPY
20,000JPY3,000

JPY3,000

Free

Free

ONL
Y
TEC
TEC
-FR
EE

-4-

HOTEL ACCOMMODATIONJTB GMT has booked rooms at following hotels in Sapporo for theCongress period. Reservations will be made in order of receipt ofapplication form.
Hotel
Name
No. (Check-in &out time)

1

Sheraton
Hotel
Sapporo(15:00/
12:00)

Room Rates
Single
with
bath

Twin
with
bath

JPY
11,550JPY
16,800Address
Phone
Access to the Site or thenearest station
5-5-25 Atsubetsuchuo
2JO, Atsubetsu-ku ·Sapporo, Hokkaido+81-11-895-8811
2 min. walk from JR
Shin-Sapporo Station

5-6-2 Atsubetsucho 2 JO,
Shin
Atsubetsu-ku, Sapporo,
SapporoJPY
JPY
Hokkaido
Arc City
7,000
13,000 +81-11-890-2525
Hotel
Adjacent to JR(15:00/Shin-Sapporo Station
11:00)
Room rates include breakfast, service charge and a 5% consumption tax
2

REGISTRATION AND PAYMENT
Participants wishing to make registration and reserve hotel
accommodation should apply online to reach JTB GMT no later
than October 15, 2009.
Please ensure that each registrant makes his/her own online registration.
Application should be accompanied by a remittance covering theregistration fee and hotel deposit (one night room charge) due JTB
GMT. (The hotel deposit will be credited to your bill. All hotel
expenses deducting the deposit should be paid directly to the hotel.)
No reservation will be confirmed in the absence of this payment. All
payment must be in Japanese yen. If the remittance covers morethan one person, please inform us the name of each participant.
Payment should be in the form of:- One of the following credit cards:
1. VISA 2. MasterCard 3. Diners Club 4. AMEX 5. JCB- A bank transfer to JTB Global Marketing & Travel Inc. (Message:
MNC2009)
Account at The Bank of Tokyo-Mitsubishi UFJ, Ltd.
Shin-Marunouchi Branch (swift code: BOTKJPJT)
1-4-2 Marunouchi, Chiyoda-ku, Tokyo 100-0005 Japan(Account number: 4760343)
CANCELLATIONIn the event of cancellation, written notification should be sent to JTB
GMT. The following cancellation fees will be deducted before any
refund is made.
Registration: If a cancellation notice is received by JTB GMT on or
beforeOctober 15, 2009 --------------------------JPY5,000 of processing fee
On and after October 16, 2009 ---------------100% of the registration fee
Hotels: If a cancellation notice is received by JTB GMT
Up to 10 days before the first night of stay ----------------------None
9 to 2 days before---------------------------20% of daily room charge
1 day before ---------------------------------80% of daily room charge
On the day of arrival or no notice given -----100% of daily room charge-5-

COMMITTEE MEMBERS
ORGANIZING COMMITTEE
Chairperson:
Vice-Chair:

Members:
H. Arimoto (Fujitsu)
R. Ebinuma (Canon)
K. Fujii (NEC Electronics)
N. Fukushima (Toshiba)
K. Hane (Tohoku Univ.)
N. Hayashi (Dai Nippon Printing)Y. Horiike (NIMS)
T. Horiuchi (Tokyo Denki Univ.)
K. Ishibashi (Riken)
A. Ishihama (Sharp)
S. Ishihara (Univ. of Tokyo)
S. Kadomura (Sony)ADVISORY

H. Ahmed (Cambridge Univ.)
Y. Aoyagi (Ritsumeikan Univ.)
S. Brueck (Univ. of New Mexico)
C.Y. Chang (Natl. Nano Device Lab.)
S.Y. Chou (Princeton Univ.)
E. Dobisz (Hitachi San Jose Res.)
F. Fortagne (Leica Microsystem)
K. Gamo (Osaka Univ.)
S. De Gendt (IMEC)
E. Gogolides (IMEL, NCSR)
C. Hanson (SPAWAR System)
L.R. Harriott (Univ. of Virginia)
O. Joubert (CRS-LTM)
D. Kern (Univ. of Tubingen)
H.W.P. Koops (NaWoTec GmbH)J. Melngailis (Univ. of Meryland)

S. Shoji (Waseda Univ.)
T. Asano (Kyushu Univ.)
T. Fukui (Hokkaido Univ.)
M. Kameyama (Nikon)
M. Komuro (NEDO)
S. Matsui (Univ. of Hyogo)
I. Mori (Selete)
Y. Ochiai (Toyo Gosei)
S. Okazaki (EUVA)
S. Sato (Fujitsu Labs.)
S. Tagawa (Osaka Univ.)
Y. Todokoro (Nara Inst. Sci. &Technol.)
H. Yamaguchi (NTT)N. Yoshioka (Renesas Technol.)
S. Zaima (Nagoya Univ.)
S.-K. Min (Kyung Hee Univ.)
A.R. Neureuther (UC Berkeley)
R.F.W. Pease (Stanford Univ.)
C. Pfeiffer (Consultant)
I. Raptis (IMEL, NCSR)
K. Ronse (IMEC)
R. Shimizu (IIAS)
C. Shih (ERSO/ITRI)
H.I. Smith (MIT)T. Sugano (Univ. of Tokyo)
M. Takai (Osaka Univ.)
S. Tedesco (Leti)
T. Tsurushima (Kyushu Univ.)
M. Wang (China Academic Sci.)
J. Wiesner (Nikon Precision)
N. Yokoyama (Fujitsu Labs.)

STEERING COMMITTEE
Chairperson:
Vice-Chairperson:
Program Chair:
Secretariat:
Treasurer:
Seminar:Public Information
Publicity
Technical Exhibition
Place:
Overseas

T. Itani (Selete)
Y. Miyamoto (Tokyo Inst. of Technol.)T. Meguro (Tokyo Univ. of Sci.)
K. Nakano (NEC)Y. Ono (NTT)S. Aoyama (Renesas)
Y. Ono (NTT)S. Kasai (Hokkaido Univ.)
F. Nihey (NEC)S. Akita (Osaka Pref. Univ.)
K. Tohmezuka (Tokyo Electron)
H. Yamashita (HOYA)
T. Kozawa (Osaka Univ.)
N. Sakai (Toyo Gosei)
N. Taneichi (Tokyo Ohka)
S. Hara (Hokkaido Univ.)
M. Takeyama (Kitami Inst. of Technol.)
J.H. Ahn (Hanyang Univ.)
A. Chen (ASML)
O.H. Kim (POSTEC)
C.K. Sung (National Tsing Hua Univ.)-6-PROGRAM COMMITTEE
Chairperson:
Vice-Chairpersons:T. Meguro (Tokyo Univ. of Sci.)
S. Akita (Osaka Pref. Univ.)
T. Kozawa (Osaka Univ.)

1-1:DUV, VUV, EUV Lithography and Metrology
Section Head:
Sub Head:
Members:

T. Sato (Toshiba)
S. Nagahara (NEC Electronics)
J.H. Ahn (Hanyang Univ.)
T. Chijimatsu (Fujitsu)
N. Hirayanagi (Nikon)
J. Kitano (Tokyo Electron)
Y. Morikawa (DNP)
M. Suzuki (Canon)
A. Yamaguchi (Hitachi)

1-2:Electron- and Ion-Beam Lithography
Section Head:
Sub Head:
Members:

M. Miyamoto (Tokyo Inst. of Technol.)J. Yanagisawa (Univ. of Shiga Pref.)K.-Y. Tsai (National Taiwan Univ.)
S. Babin (aBeam Technology)
M. Kotera (Osaka Inst. of Technol.)
H. Nozue (NuFlare Tech.)
K. Ogino (Fujitsu)
A. Yamada (Advantest)
J. Yamamoto (Hitachi)
Y. Yamamoto (SII Nanotechnology)
H. Yamashita (HOYA)

1-3:Resist Materials and Processing
Section Head:
Sub Head:
Members:

T. Kozawa (Osaka Univ.)
H. Oizumi (Selete)
T. Azuma (Toshiba)
M. Endo (Panasonic)
M. Goethals (IMEC)
H. Hada (Tokyo Ohka)
Y. Hirai (JSR)
H. Horibe (Kanazawa Inst. of Technol.)
H. Kudo (Kanagawa Univ.)
S. Masuda (Fuji Film)
K. Nakano (NEC)K. Nozaki (Fujitsu)
I. Takemoto (Sumitomo Chemical)

A. Kohno (Fukuoka Univ.)
K. Takase (Nihon Univ.)
T. Yoneda (Tohoku Univ.)
X.W. Zhao (Tokyo Univ. of Sci)

2-3:Nanomaterials
Section Head:
Sub Head:
Members:

2-4:Nano-Tool
Section Head:
Sub Head:
Members:

Members:

Y. Ohno (Nagoya Univ.)
S. Kasai (Hokkaido Univ.)
T.-S. Chao(National Chiao Tung Univ.)
S.W. Hwang (Korea Univ.)
J.-T. Sheu (National Chiao Tung Univ.)
N. Banno (NEC)N. Fukaｔa (NIMS）
K. Maehashi (Osaka Univ.)
T. Maemoto (Osaka Inst. of Technol.)K. Nagashio (Univ. of Tokyo)
K. Nishiguchi (NTT)S. Shingubara (Kansai Univ.)

2-2:Nanofabrication
Section Head:
Sub Head:
Members:

M. Masahara (AIST)
T. Hasegawa (NIMS)
T. Asahi (Osaka Univ.)
T. Chikyo (NIMS)
Y. Ishikawa (Univ. of Tokyo)
T. Kobayashi (Riken)-7-

M. Nagase (NTT)S. Akita (Osaka Pref. Univ.)
H. Ina (Canon)
M. Kitazawa (Olympus)
D.-W. Lee (Chonnam National Univ.)
Y. Mitsui (Hitachi Hightechnologies)
M. Miyoshi (Univ. of Tokyo)
T. Ono (Tohoku Univ.)
S. Takahashi (Univ. of Tokyo)
M. Yasutake (SII NanoTechnology)

3:Nanoimprint, Nanoprint and Rising Lithography
Section Head:
Sub Head:
Members:

H. Hiroshima (AIST)
A. Yokoo (NTT)F.-B. Hsiao (National Cheng Kung Univ.)
Y. Hirai (Osaka Pref. Univ.)
H. Lee (Korea Univ.)
A. Miyauchi (Hitachi)
M. Okinaka (Canon)
N. Sakai (Toyo Gosei)
J. Taniguchi (Tokyo Univ. of Sci.)

4:Bio MEMS, Lab on a Chip
Section Head:
Sub Head:
Members:

2-1:Nanodevices
Section Head:
Sub Head:

T. Yoshinobu (Tohoku Univ.)
Y. Tajima (Riken)
E.K. Kim (Hanyang Univ.)
J. Fujita (Univ. of Tsukuba)
T. Ishida (AIST)
T. Miyazawa (Univ. of Tokyo)
T. Takenovu (Tohoku Univ.)
K. Tanii (Waseda Univ.)

T. Ichiki (Univ. of Tokyo)
Y. Takamura (JAIST)
G.-B. Lee (Natioal Cheng Kung Univ.)
F.-G. Tseng (National Tsing Hua Univ.)
T. Horiuchi (NTT)
W-T. Liu (National University of Singapore)
H. Takei (KAST)
Y. Miyahara (NIMS)
Y. Murakami(Hiroshima Univ.)

5:Microsystem Technology and MEMS
Section Head:
Sub Head:

K. Suzuki (Ritsumeikan Univ.)
T. Ikehara (AIST)
W. Fang (National Tsing Hua Univ.)
J.-W. Hsieh (Asia Pacific Microsystems)
J. Shin (Kyungpook Univ.)
Members:
H. Kuwano (Tohoku Univ.)
Y. Suzuki (Nikon)
Z. Rymuza(Warsaw Univ. of Technol.)
H. Takao (Toyohashi Univ. of Technol.)
T. Tsuchiya (Kyoto Univ.)
D.F. Wang (Ibaraki Univ.)
Secretariat - 22nd International Microprocesses and Nano- technology
Conference (MNC 2009), c/o Secretaryart Corporation
TEL: +81-3-5367-1735 FAX: +81-3-5367-1736
E-mail：secretariat@imnc.jp MNC 2009 web：http://imnc.jp/-8-