Tuesday, October 25
Room A (2F)
25P-1: Plenary Session
Chairpersons: T. Meguro (Tokyo Univ. of Sci.) and M. Nagase (Univ. of Tokushima)
9:30-9:50
Opening Remark: H. Yamaguchi (NTT)Award Presentation: Y. Miyamoto (Tokyo Inst. of Technol.) and H. Yamaguchi (NTT)MNC 2010 Outstanding Paper, Most Impressive Presentation, Most Impressive Poster and Young Author’s Award
Announcement from Committee: T. Itani (EIDEC) and T. Meguro (Tokyo Univ. of Sci.)
25P-1-1
9:50-10:30
Solving Energy and Environmental Problems (Plenary)
S. Wasaka, NEDO, Japan

Room P (2F)
Coffee BreakRoom A (2F)
25P-1-2
10:50-11:30
Toward the Achievement of Ultra-Low Power Systems by taking advantages of BEOL Devices (Plenary)
N. Sumihiro, LEAP, Japan

25P-1-3
11:30-12:10
Chemistry of Graphene (Plenary)

L.K. Ping, Natl. Univ. of Singapore, Singapore

Room A (2F)
25A-2: Symp. A: Graphene I
Chairpersons:K. Maehashi (Osaka Univ.)
M. Nagashio (Univ. of Tokyo)

LUNCH
Room B (2F)

25A-2-1
13:40
Graphene-metal Contacts: Influence ofGraphene Layer Orientation and Thickness(Invited)

25B-2: Microsystem Technology and
MEMS I
Chairpersons:N. Miki (Keio Univ.)
T. Ando (Ritsumeikan Univ.)
25B-2-1
13:40
Vibration MEMS Power Generator
using Polymer Electrets for Energy
Harvesting Application (Invited)

25A-2-2
14:10
Synthesis of a Novel Carbon Structure:
Multi-layer Graphene formed at the Both
Sides of Catalyst Film on a Substrate

25B-2-2
14:10
Thermal-photovoltaic Hybrid
Solar
Generator
using
Thin-film
Thermoelectric Modules

S. Kodambaka 1, Y. Murata 1, A. Ebnonnasir 2, E.
Starodub 3, B.B. Kappes 2, S. Nie 3, N.C. Bartelt 3,
K.F. McCarty 3 and C.V. Ciobanu 2, 1 UCLA, 2
Colorado School of Mines and 3 Sandia Natl.
Labs., USA

Y. Suzuki, Univ. of Tokyo, Japan

Room C (2F)
25C-2: BioMEMS, Lab on a Chip I
Chairpersons:Y. Murakami (Hiroshima Univ.)
T. Matsumoto (Tokyo Medical and Dental
Univ.)
25C-2-1
14:00
Microfluidic Assembly with Molecules
and Cells (Invited)

S.Takeuchi, Univ. of Tokyo and JST-ERATO,
Japan

25C-2-2
14:30
Quasi-in vivo Heart Electrocardiogram
Measurement using Convolution of Field
Potential Propagation in Cardiomyocytes
Network Circuit

D. Kondo 1,2, S. Sato 1,2, K. Yagi 2, M. Nihei 1,2
and N. Yokoyama 1,2, 1 Fujitsu Labs and 2 AIST,Japan

M. Mizoshiri, M. Mikami and K. Ozaki, AIST,Japan

25A-2-3
14:30
Formation of Graphene on Diamond (111)
Surfaces

25B-2-3
14:30
A Venturi-type Micro Mist Generator
fabricated by MEMS Technology and its
Application to Local Surface Cooling ofTarget Objects

M. Sasaki, T. Akagi and T. Ichiki, Univ. of Tokyo,
Japan

25B-2-4
14:50
Demonstration of Vibrational Braille
Code
Displayusing
Large
Displacement MEMS Actuators

25C-2-4
15:10
Simultaneous Filtration and Focusing ofCancerous Cells in an Insulator-based
Dielectrophoretic Microchip

N. Tokuda 1,2,3, M. Fukui 1, K. Kojima 4, K.
Komatsu 4, K. Funatsu 4, T. Makino 2,3, D.
Takeuchi 2,3, S. Yamasaki 2,3 and T. Inokuma 1, 1
Kanazawa Univ., 2 AIST, 3 JST-CREST and 4
MST, Japan

25A-2-4
14:50
Tuning of Electronic Properties of Epitaxial
Graphene on Microfabrication
H. Fukidome 1, H. Handa 1, M. Kotsugi 2,3, T.
Seyller 4, Y. Kawai 1, T. Ohkouchi 2, K. Horn 5, R.
Takahashi 1, K. Imaizumi 1, Y. Enta 6, M. Suemitsu
1 and T. Kinoshita 2,3, 1 Tohoku Univ., 2
JASRI-SPring8, 3 JST-CREST, Japan, 4Friedrich-Alexander-Univ.
5
Max-PlanckGesselschaft, Germany and 6 Hirosaki Univ.,
Japan

25A-2-5
15:10
Characteristics of the Field Effect Transistor
using Graphene Layers grown on Graphene
Template by Chemical Vapor Deposition

R. Negishi, Y. Ohno, K. Maehashi, K. Matsumoto
and Y. Kobayashi, Osaka Univ., Japan

F. Nomura, T. Kaneko and K. Yasuda, Tokyo
Medical and Dental Univ., Japan

25C-2-3
14:50
Immobilization and Observation
Exosomes in Microfluidic DeviceofM. Arai, K. Terao, F. Shimokawa, T. Suzuki, F.
Oohira and H. Takao, Kagawa Univ., JapanJ. Watanabe 1, H. Ishikawa 1, X. Arouette 1,
Y. Matsumoto 1 and N. Miki 1,2, 1 Keio Univ.
and 2 JST-PRESTO, Japan

W.-F. Chen and C.-P. Jen, Natl. Chung Cheng
Univ., Taiwan

25B-2-5
15:10
A Miniaturized Dual-axis Electrolytic Tilt
Sensor

25C-2-5
15:30
Airborne Virus Micro-hole Sampler
designed by Particle Track Analysis for the
Pandemic Prevention

J.C. Choi 1, Y.C. Choi 1, W.-J. Kim 2 and
S.H. Kong 1, 1 Kyungpook Natl. Univ. and 2
MENTech., Korea-1-

K. Takenaka, Y. Sasaki and S. Togashi, Hitachi,Japan25B-2-6
15:30
A MEMS-based Micro Ro-boat using
Water Steam
Y.C. Choi, J.C. Choi and S.H. Kong,
Kyungpook Natl. Univ., Korea

Room P (2F)
Coffee BreakRoom A (2F)

Room B (2F)

25A-3: Symp. A: Graphene II
Chairpersons:
D. Kondo (Fujitsu Labs.)
K. Hirahara (Osaka Univ.)
25A-3-1
15:50
Graphene as an Emerging Material for
Future Electronics (Invited)
X. Duan, UCLA, USA

Room C (2F)

25B-3: Microsystem Technology and
MEMS II
Chairpersons:H. Takao (Kagawa Univ.)
Y.-C. Lin (Tohoku Univ.)
25B-3-1
16:05
MEMS Resonator: What is the challenge?
(Invited)
K. Suzuki, Ritsumeikan Univ., Japan

25C-3: BioMEMS, Lab on a Chip II
Chairpersons:Y. Takamura (JAIST)
T. Ichiki (Univ. of Tokyo)
25C-3-1
16:10
Effect of Microscale Surface Geometry ofElectrodes on Performance of Microbial
Fuel Cells

T. Kano 1, E. Suito 1 and N. Miki 1,2, 1 Keio
Univ. and 2 NEDO BEANS Project, Japan

25A-3-2
16:20
Graphene:
Production
Characterization
and(Invited)

Strategies,
Applications

F. Bonaccorso and A.C. Ferrari, Univ. ofCambridge, UK

25A-3-3
16:50
Evaluation of Graphene Thin Films by
Surface Plasmon Resonance

K. Murasaki, S. Akita and T. Arie, Osaka Pref.
Univ., Japan

25A-3-4
17:10
Immunosensors based on
Field-effectTransistors
Antigen-binding Fragments

Grapheneusing

S. Okamoto, Y. Ohno, K. Maehashi, K. Inoueand K. Matsumoto, Osaka Univ., Japan

25B-3-2
16:35
High Q-factor 80 MHz MEMS Resonatorutilizing Torsional-to-transverse Vibration
Conversion

25C-3-2
16:30
Microfluidic
Designof
Catalytic
Packed-bed Multi-channel Reactor for
Gas-liquid Multiphase Reaction

25B-3-3
16:55
Frequency Stability of MEMS Oscillators:
Material Property Effect and Circuit Phase
Effect25C-3-3
16:50
Microfluidic
Chip-based
Organophosphorus
Detection
using
Bienzyme Bioelectrocatalysis

M. Kiso 1, M. Okada 1, H. Fujiura 1, H. Miyauchi
1, K. Niki 1, H. Tanigawa 2 and K. Suzuki 2, 1
Sanyo Electric and 2 Ritsumeikan Univ., JapanT. Ikehara 1, M. Konno 1, S. Murakami 1 and T.
Mihara 2, 1 AIST and 2 Olympus, Japan

25B-3-4
17:15
Reliability of Organic Membrane Structure
embedded in Silicon-interposer Chip

C.Y. Jeong 1, Y.D. Han 1, D.S. Lee 2 and H.C.
Yoon 1, 1 Ajou Univ. and 2 Electronics
Telecommunications Res. Inst., Korea

M. Taketomo, S. Mitarai, K. Oniki and K. Ikeda,
Sony, Japan

25B-3-5
17:35
Variable
Gap
SiliconDirectional Coupler Switch

25C-2, 3 Author's Interview: 17:10-17:20
Waveguide

Y. Akihama, Y. Kanamori and K. Hane, Tohoku
Univ., Japan

25A-2,3 Author's Interview: 17:30-17:40

S. Murakami, K. Ohtaki, S. Matsumoto and T.
Inoue, AIST, Japan

25B-2, 3 Author's Interview: 17:55-18:05-2-

Wednesday, October 26
Room A (2F)

Room B (2F)

26A-4: Nano Carbon I
Chairpersons:
J. Fujita (Univ. of Tsukuba)
M. Tanemura (Nagoya Inst. of Technol.)

26B-4: Symp. B: Molecular Modification/molecular Self -assembly for Micro/
nano-structure
Chairpersons:Y. Ono (NTT)A. Kohno (Fukuoka Univ.)
26B-4-1
9:00
Au
Nanoparticle
Single-ElectronTransistors on Electroless Gold-Plated
Nanogap Electrodes (Invited)

26A-4-1
9:00
Complementaryin-situprobingofGraphene and Carbon Nanotube CVD(Invited)
S. Hofmann, Univ. of Cambridge, UK

Room C (2F)

Y. Majima, Tokyo Inst. of Technol., Japan

26C-4: Novel Transistors
Chairpersons:
N. Banno (Leap)
K. Nishiguchi (NTT)
26C-4-1
9:00
Atom
Movement
Controlled
Three-terminal Device, 'Atom Transistor'(Invited)
T. Hasegawa, NIMS and JST-CREST, Japan

26A-4-2
9:30
CVD Gas Pressure Dependence of
Horizontally Aligned Single-walled Carbon
Nanotubes grown on R-cut Crystal Quartz
Substrates

26B-4-2
9:30
Self-assembled Molecular Nanowires forMulti-channel Transistor (Invited)

26A-4-3
9:50
In-situ Observation of Current-pulse-induced
Fullerene Production

26B-4-3
10:10
Overview of Directed Self-Assembly /Basic and application (Invited)

26C-4-3
9:50
Fabrication and Characterization of InAs
Nanowire Vertical Surrounding-gate FETs

26A-4-4
10:10
Characterization of Carbon Nanotubes by
Atomically Resolved Electron-diffraction
Microscope

26B-4-4
10:40
Directed
Self-Assembly
Copolymers
towardNanolithography (Invited)

26C-4-4
10:10
Low-frequency Noise in GaAs Nanowire
MISFETs having SiNx Gate Insulator

Y. Wakayama, NIMS, Japan

K. Tomioka 1, 2M. Yoshimura 1 and T. Fukui 1, 1
Hokkaido Univ. and 2 JST-PRESTO, Japan

T. Inoue, D. Hasegawa, S. Badar, S. Chiashi, J.
Shiomi and S. Maruyama, Univ. of Tokyo, Japan

T. Nishijima 1,2, R. Ueki 1,2, E. Kano 1,2 and J.
Fujita 1,2, 1 Tsukuba Res. Ctr. forInterdisciplinary Materials Sci. and 2 Univ. of
Tsukuba, Japan

T. Dobashi 1, Y. Maehara 2, K. Gohara 2 and O.
Kamimura 1, 1 Hitachi and 2 Hokkaido Univ.,
Japan

26C-4-2
9:30
Fabrication of Vertical In0.7Ga0.3As
Nanowire Surrounding-gate Transistors
with High-k Gate Dielectric on Si Substrate

M. Muramatsu, Tokyo Electron Kyushu, Japan

of
Block
Single-Digit

T. Yamaguchi 1,2*, H. Yamaguchi 1, T. Iyoda 2,
1 NTT and 2 Tokyo Inst. of Technol., Japan

26A-4-5
10:30
Recovery Force of Carbon Nanotube
Shape Memory

Y. Kobayashi, Y. Kohashi, S. Hara and J.
Motohisa, Hokkaido Univ., JapanT. Muramatsu, K. Miura, Y. Shiratori and S.
Kasai, Hokkaido Univ., Japan

26C-4-5L
10:30
L-Shaped
Tunneling
Field-EffectTransistors(TFETs)for
Low
Subthreshold Swing and High Current
Drivability

S. Itaya, K. Hirahara and Y. Nakayama, Osaka
Univ., Japan

S.W. Kim 1, W.Y. Choi 2, M.-C.Sun 1, H.W.
Kim 1, J.-H. Lee 1, H. Shin 1 and B.-G. Park1, 1 Seoul Nat. Univ. and 2 Sogang Univ.,
Korea

26B-4 Author's Interview: 11:10-11:20

26C-4-6
10:50
Characteristics
ofGate-all-around
Hetero-gate-dielectric Tunneling FETs

J.S. Lee 1, W.Y. Choi 2 and I.M. Kang 1, 1
Kyungpook Natl. Univ.and 2 Sogang Univ.,
Korea

Room P (2F)
Coffee BreakRoom A (2F)
26A-5: Nano Carbon I
Chairpersons:T. Takenobu (Waseda Univ.)
S. Okada (Univ. of Tsukuba)
26A-5-1
11:05
Electric Field Enhancement by Laser Light
focused on Electrode Edges forControlled-positioningof
CarbonNanotubes
T. Takahashi, R. Inori, T. Okada, T. Arie and S.
Akita, Osaka Pref. Univ., Japan

Room B (2F)
26B-5: Nanomaterials I
Chairpersons:J. Kawakita (NIMS)
Inst. of Technol.)
26B-5-1
11:25
Single-Electron Tunneling via Molecular
Quantum Dots Embedded in a MetalInsulator-Semiconductor Structure(Invited)
R. Hayakawa 1, N. Hiroshiba 2, T. Chikyo 1 andY. Wakayama 1, 1 NIMS and 2 Univ. of
Tsukuba, Japan-3-

Room C (2F)
26C-5: New Functional Devices
Chairpersons:
N. Banno (Leap)
K. Nishiguchi (NTT)
26C-5-1
11:25
Ag2S Synaptic Device showing Short andLong Term Memory

T. Ohno 1, T. Hasegawa 1, T. Tsuruoka 1, K.
Terabe 1, J.K. Gimzewski 1,2 and M. Aono 1, 1
NIMS, Japan and 2 UCLA, USA26A-5-2
11:25
Single-welled
CarbonTransistors using Ion-gel

Nanotube

Y. Yomogida 1, T. Takenobu 2, D. Wen 2, H.
Shimotani 1, K. Yanagi 3 and Y. Iwasa 4, 1
Tohoku Univ., 2 Waseda Univ., 3 Tokyo
Metropolitan Univ. and 4 Univ. of Tokyo, Japan

26A-5-3
11:45
Carbon Nanotube-based Floating Gate
Memory with High-k Dielectrics

Y. Fujii, T. Ohori, Y. Ohno, K. Maehashi, K. Inoueand K. Matsumoto, Osaka Univ., Japan

26A-5-4
12:05
Extremely Flexible All-carbon Nanotube
Field-effect Transistors without Device
Degradation

26B-5-2
11:55
Dielectric and Surface Morphology
Properties of PVDF-TrFe/PMMA:TiO2
Multilayer Dielectric Thin Films for Organic
Field Effect Transistors Application

26C-5-2
11:45
Proposal of 1-Diode Type Resistive
Switching Memory using Crdoped SrTiO3

26B-5-3
12:15
Ternary
PbSSe
Nanocrystal:poly(3-hexylthiophene) Nanocomposites for
Near Infrared-sensitive Hyabrid Solar
Cells

26C-5-3
12:05
Color Filter using Dielectric Multilayer andGuided Mode Resonant Grating for
CMOS Image Sensor

L.N. Ismail, M.H.M. Wahid, Z. Habibah, S.H.
Herman and M. Rusop, Univ. Teknologi MARA,
Malaysia

M. Nam, S. Kim, S.-W. Kim and K.-K. Lee, Ajou
Univ., Korea

M.Y. Song, Y. Seo, Y.S. Kim, J.H. Jeon, H.-D.
Kim, H.-M. An, K.-H. Kim and T.G. Kim, Korea
Univ., Korea

Y. Konno, K. Shiozawa, K. Kokubun, T. Yorisaki,
J. Tonotani, N. Momo, H. Sasaki, H.S. Momose,
T. Ohguro and N. Okada, Toshiba, Japan

S. Aikawa 1,2, E. Einarsson 1, S. Chiashi 1, E.
Nishikawa 2 and S. Maruyama 1, 1 Univ. ofTokyo and 2 Tokyo Univ. of Sci., Japan

26A-4, 5 Author's Interview: 12:25-12:35

26C-4, 5 Author's Interview: 12:25-12:35
LUNCH

Room A (2F)

Room B (2F)

26A-6: Lithogphay and Metrology
Chairpersons:T. Sato (Toshiba)
H. Yamashita (HOYA)

26B-6: Nanomaterials II
Chairpersons:T. Ishida (AIST)

26A-6-1
14:00
Contribution of Optical Lithography to
Development of Optical Designing
Theory (Invited)

26B-6-1
14:00
Interfacial Reactions of Nickel Metal
Nanodots on Single-crystal (001)Si1-xCx
Substrates

M.Shibuya, Tokyo Polytechnic Univ., Japan

S.L. Cheng, Y.C. Tseng and S.W. Lee, Natl. Ctrl.
Univ., Taiwan

26A-6-2
14:30
EUV Lithography: NXE:3100 delivered toFabs and building of NXE:3300B has
started

26B-6-2
14:20
Fast Formation of Conductive Material by
Simultaneous Chemical Process for
Infilling TSV

Room C (2F)
26C-6: New Conceptual Devices
Chairpersons:S. Kasai (Hokkaido Univ.)
H. Ikeda (Shizuoka Univ.)
26C-6-1
14:00
Minimum Energy for Computation and theLandauer Principle (Invited)
G. Snider, Univ.of Notre Dame, USA

26C-6-2
14:30
FabricationofFunctional
Oxide
Nanostructures and the Electronic
Application utilizing Stochastic Resonance

R. Peeters, S. Young, H. Meiling, N. Harned, R.
Droste, J. Stoeldraaijer, H. Meijer and R. Kool,
ASML Netherlands, Netherlands

J. Kawakita and T. Chikyow, NIMS, Japan

T. Kanki, H. Takami, K. Kawatani and H. Tanaka,
Osaka Univ., Japan

26A-6-3
14:50
Characterization of Anode-shockwave andPlasma Diffusion in a Laser Assisted
Discharge Produced Plasma 13.5 nm
EUV Source for Lithography

26B-6-3
14:40
Properties of Nitrogen-atom Endohedral
Fullerene efficiently synthesized using
Controlled Radio-frequency Discharge
Plasma26C-6-3
14:50
Noise-induced Stochastic Enhancement
for a Device based on Redox-active Huge
Molecule and DNA Nanonetwork

26A-6-4
15:10
2D and 3D Resist Line Roughness
Characterization

26B-6-4
15:00
Fabrication of Metal Thin Film Patterns on
Hydro-gels

26C-6-4
15:10
Stochastic
Resonance
using
Steep-subthreshold-swing Transistor

26A-6-5
15:30
Photoresist
ShrinkagecausedSingle-line Scan of Electron Beam

26B-6-5
15:20
Driving
Water
DropletsonSuperhydrophobic-hydrophilic Patterned
Si Nanowire Surface

26C-6-5L
15:30
Single-Photon Detection by a Simple SOIMOSFET

S. Lee, J. Seo and T. Lee, Yonsei Univ., Korea

W. Du, H. Inokawa and H. Satoh, Shizuoka
Univ., Japan

26B-5, 6 Author's Interview: 15:40-15:50

26C-6 Author's Interview: 15:50-16:00

Q. Zhu, T. Muto, J. Yamada, N. Kishi, M.
Watanabe, A. Okino, K. Horioka and E. Hotta,
Tokyo Inst. of Technol., Japan

A.V. Pret 1,2, E. Kunnen 1, R. Gronheid 1, E.
Pargon 3, O. Luere3 and D. Bianchi 4, 1 IMEC,
2 K.U.Leuven, Belgium, 3 CNRS-LTM, France
and 4 AC²T res. Austria

T. Ohashi and J. Tanaka, Hitachi, Japan

26A-6 Author's Interview: 15:50-16:00

by

S.C. Cho, T. Kaneko and R. Hatakeyama,
Tohoku Univ., Japan

N. Shimamoto 1,2, H. Mitomo 1,2, R.
Kawamura 1, K. Kawabata 1, R. Kishi 3 , K.
Sano 1,4, K. Ijiro 1,2and Y. Osada 1, 1 RIKEN, 2
Hokkaido Univ., 3 AIST and 4 Nippon Inst.
Technol., Japan-4-

T. Matsumoto, Y. Hirano, Y. Segawa, and T.
Kawai, Osaka Univ., JapanaK. Nishiguchi and A. Fujiwara, NTT, Japan

Room P (2F)
Coffee Break

26P-7: 16:00-18:00

POSTER SESSION I

Lithography and Metrology
26P-7-1
GPU-based High Speed Algorithms for
Photomask Layout Verification andApplication Study on 2Xnm SRAM

K. Kadota 1, K. Kato 2 and T. Inoue 2, 1 AIST
and 2 SII Nano Technol., Japan

26P-7-2
Micro Coherent EUV Scatterometry
Microscope for a Defect Characterization
on an EUV Mask

T. Harada 1, M. Nakasuji 1, A. Tokimasa 1, T.
Watanabe 1, Y. Usui 2and H. Kinoshita 1, 1
Univ. of Hyogo and 2 EIDEC, Japan

26P-7-3
Micro Patterning on Nonplanar Substrates
using Unconventional Photolithographic
Technique with Flexible Photomask

26P-7-4
Optical Metrology of Shape-varying
Nano-patterned Gratings by analyzing theScattering Signals in their Pupil Images

26P-7-5
The Effect on CD Performance for Carbon
Contamination of EUV Mask using
Coherent Scattering Microscopy / In-situ
Contamination System

26P-7-6
Defect Inspection TechniqueSurface Plasmon Resonance

26P-7-9
Volume Production LLP EUV Sources

S.-E. Tseng and A. Chen, ASML, Taiwan

26P-7-8
An Optimized Multi-grid Strategy for
Accurate Flare Modeling with 3D Mask
Effect in EUV Lithography

J. Lee 1, S. Lee 1, C. Kim 2, Y. Kim 2, S. Kim 2
and O. Kim 1, 1 POSTECH and 2 Hynix
Semiconductor, Korea

26P-7-10
Maskless Lithographic Fine-patterning
onto Deep or Slope Surface using a Newly
Developed DMD Exposure Equipment

26P-7-11
Cost Effective Lithography by Extension of
Mask Aligner Lithography Techniques

26P-7-12
Simulation Analysis of Image Drift inducedby Charging

26P-7-13
Patterning of Spiral Structure on OpticalFiber by Focused-ion-beam Etching

26P-7-14
Micro-IBIL Analysis as Diagnostic Tool for
the Micro-structure Patterning on Diamondby Proton Beam Writing

26P-7-15
EB Drawing of 15 nm × 15 nm Pitched
Nanodot Arrays with a Size of < 10nm
using High Contrast Developer

Y.M. Lee 1, J.H. Li 1, F.M. Wang 1, H.H. Cheng
1, Y.T. Shen 1, K.Y. Tsai 1 and A.C. Chen 2, 1
Natl. Taiwan Univ. and 2 ASML, Taiwan

26P-7-7
EUV Process Optimization for Contact
Layer of 14nm Node Logic and 16nm Half
Pitch Memory Devices

W. Iwasaki 1, Y. Peng 1, T. Takeshita 1, H.
Shibata 2, Y. Kudo 2,R.Maeda 3 and R. Sawada
1, 1 Kyushu Univ., 2 Nikon and 3 AIST, Japan

H. Mekaru 1 and T. Yano 2, 1 AIST and 2 Inst.
for Molecular Sci., Japan

26P-7-138L
DevelopmentofCoherent
EUV
Scatterometry
MicroscopewithHigh-order Harmonic Generation Source
for EUV Mask Inspection and Metrology

M. Nakasuji 1,3, A. Tokimasa 1,3, T. Harada
1,3, Y. Nagata 2,3, T. Watanabe 1,3, K.
Midorikawa 2 and H. Kinoshita 1,3, 1 Univ of
Hyogo, 2 RIKEN and 3 JST-CREST, Japan

J. Doh 1,2, S. Lee 1, J. Lee 1, S. Hong 1, I. Lee
1, S. Park 1, C.Y. Jeong 2, D.G. Lee 2, S.-S. Kim
2, H.-K. Cho 2 and J. Ahn 1, 1 Hanyang Univ.
and 2 Samsung Electronics, Korea

M. Hornung 1, A. Erdmann 2, M. Hennemeyer
1, U. Hofmann 3, K. Motzek 2 and N. Ünal 3, 1
SUSS MicroTec Lithography, 2 Fraunhofer Inst.
for Integrated Systems & Device Technol. and 3
GenISys, Germany

W. Kada 1, A. Yokoyama 1, M. Koka 1, K.
Takano 2, T. Satoh 1 and T. Kamiya 1, 1 JAEA
and 2 Osaka Univ., Japan

J. Park, H. Fujita and B. Kim, Univ. of Tokyo,
Japan

using

H. Kashiwagi, I. Yoneda, K. Morishita, R.
Yoshikawa, T. Hirano and T. Nakasugi, Toshiba,Japan

J. Bonafede, Cymer Japan, Japan

N. Okai and Y. Sohda, Hitachi, JapanT. Komori, H. Zhang, T. Akahane, Z. Mohamad,
Y. Yin and S. Hosaka, Gunma Univ., Japan

26P-7-139L
Measurement of Surface Potential
Distribution of Resist Irradiated by
Fogging Electrons
A. Osada 1, M. Otani 2 Y. Ohara 2 and M.
Kotera 1,2, 1 Osaka Inst. of Technol. and 2
Nanomaterials Microdevices Res. Ctr., Japan

Nanocarbons
26P-7-16
Graphene/Cobalt Interface Structures in
Cobalt-encapsulated
CarbonNanocapsules

D. Matsuura and T. Kizuka, Univ. of Tsukuba,Japan

26P-7-19
Electronic
Structureofadsorbed on HfO2 Surfaces

Graphene

K. Kamiya 1,2, N. Umezawa 3 and S. Okada
1,2, 1 Univ. of Tsukuba, 2 JST-CREST and 3
NIMS, Japan

26P-7-22
Improvement of Optical Graphene Layer
IdentificationforLarge-area
Characterization

26P-7-17
Atomic Layer Deposition of Amorphous
Carbon and Multilayer Graphene using
Carbon Tetrabromide as Carbon Solid
Source26P-7-18
Ni-particle as a Catalyst on Thermal
Reduction of Graphene Oxide (GO):ReaxFF based on Molecular Dynamics
Simulations

26P-7-20
Effect of SiH4 Pre-annealing
Graphitization of 3C-SiC/Si

26P-7-21
Preparation of Pd-decorated Grapheneand Investigation of its Electrochemical
Properties

T. Choi, H. Kang, J. Yoon, H. Jung and H. Kim,
Yonsei Univ., Korea

on

H. Fukidome 1, S. Abe 1, H. Handa 1,
R.Takahashi 1, K. Imaizumi 1, S. Sanbonsuge 1
and M. Suemitsu1,2, 1 Tohoku Univ. and 2
JST-CREST, JapanY. Hwang, K.-H. Yun, H. Choi and Y.-C. Chung,Hanyang Univ., Korea

J.D. Kim and H.C. Choi, Chonnam Natl. Univ.,
Korea

S.F.A. Rahman 1,2, A.M. Hashim 1 and S.
Kasai 2, 1 Univ. Teknologi Malaysia,Malaysia
and 2 Hokkaido Univ., Japan

26P-7-23
The Observation of Chemical Reactions
during Reduction of Graphene Oxide
under bi-axial Strain: ReaxFF using
Molecular Dynamics Simulations

26P-7-24
Process Optimization for Synthesis ofHigh-quality Graphene Films by Low
Pressure Chemical Vapor Deposition

K.-H. Yun, Y. Hwang, H. Choi, D.S. Yoo andY.-C. Chung, Hanyang Univ., Korea

26P-7-25
Amorphous Carbon Deposition by a Novel
Aerosol-assisted CVD (AACVD) for
Photovoltaic Solar Cell

26P-7-26
Photophysical Properties of Aqueous
Fullerene Nanoparticles prepared by
Laser Ablation in Water

26P-7-27
Multi-constituent
co-assemblyforPreparation of ZnO/Mesoporous Carbon
Nanocomposite

A.N. Fadzilah, K. Dayana and M. Rusop, Univ.
Teknologi MARA, Malaysia

T. Asahi 1, Y. Ishibashi 1, M. Arinishi 1 and H.
Miyasaka 2, 1 Ehime Univ. and 2 Osaka Univ.,
Japan

-5-

D. Lee, K. Lee, S. Jeong, J. Lee, B. Choi, J. Lee
and O. Kim, POSTECH, Korea

U.B. Suryavanshi, T. Iijima, A. Hayashi, Y.
Hayashi and M. Tanemura, Nagoya Inst. ofTechnol., Japan

26P-7-28
The Growth Rate of Polycrystalline
Diamond Films prepared by Hot-filament
Chemical Vapor Deposition Methods

26P-7-29
Inkjet Printing of CNT-TFTs patterned by
Surface Modification

H. Nagasaka, I. Nakamura, Y. Teranishi, T.
Shimizu and T. Watanabe, Tokyo Metropolitan
Industrial Technol. Res. Inst., Japan

Y. Nobusa 1, S. Matsuzaki 1, Y. Yomogida 2, K.
Yanagi 3, H. Kataura 4 and T. Takenobu 1,5, 1
Waseda Univ., 2 Tohoku Univ., 3 Tokyo
Metropolitan Univ., 4 JST-CREST and 5
JST-PREST, Japan

26P-7-30
Carbon Nanotube Inverter using Inkjet
Methond

26P-7-31
One-step Liquid-phase Synthesis of
Carbon Nanotubes: Effects of Substrate
Materials on Morphology of Carbon
Nanotubes

26P-7-32
Fabrication of the Archimedean Spiral
Patterned
Capacitorusing
theNanostructure of TiO2 and Carbon
Nanotubes

26P-7-33
Enhancing Separation Force in Brush-like
Carbon Nanotubes by Gas Phase
Oxidation

26P-7-34
Application of the Liquid-liquid Interfacial
Precipitation Method to Synthesis of
Co-encapsulated Carbon Nanocapsules

26P-7-35
Field Electron Emission Properties ofVertically Aligned Carbon Nanotube
synthesized from Palm Oil Precusor

26P-7-36
DesignandFabricationofThree-dimensional Force Sensing Device
withCarbonNano-fiber
Polymer
Composites

K. Yamagiwa, Y. Ayato and J. Kuwano, Tokyo
Univ. of Sci., JapanD. Matsuura 1, K. Miyazawa 2 and T. Kizuka 1,
1 Univ. of Tsukuba and 2 NIMS, Japan

26P-7-37
Carbon Nanotube for CO2 Detection
Sensors with Pt Adsorption

Z.-D. Lin 1, C.-S. Huang 2, C.-H. Hsiao 3 and
S.-J. Young 1, 1 Natl. Formosa Univ., 2 Natl.
Yunlin Univ. and 3 Natl. Cheng Kung Univ.,
TaiwanJ.-R. Huang, Y.-R. Huang, H.-C. Chang, C.-A.
Chen, W.-J. Su, S.-L. Lee, Y.-S. Huang and
K.-Y. Lee, Natl. Taiwan Univ. of Sci. &Technol.,TaiwanA.B. Suriani 1,2, M.H. Mamat 1, M. Salina 1,
N.A. Asli 1, M.S. Azmina 2, A.N. Falina 2, M.
Maryam 1, M.S. Shamsudin 1, R. Md Nor 3 and
M. Rusop 1, 1 Univ. Teknologi MARA, 2 Univ.
Pendidikan Sultan Idris and 3 Univ. of Malaya,
Malaysia

26P-7-38
In-situ
ObservationofSurface
Graphitization of Gallium Droplet andConcentration of Carbon in Liquid Gallium

R. Ueki 1,2, T. Nishijima 1,2, T. Hikata 3, S.
Okubo 3, R. Utsunomiya 4, T. Matsuba 4, J.
Fujita 1,2, 1 Tsukuba Res. Ctr. forInterdisciplinary Materials Sci., 2 Univ. of
Tsukuba, 3 Sumitomo Electric and 4 Nissin
Electric, JapanS. Matsuzaki 1, Y. Nobusa 1, K. Yanagi 2, H.
Kataura 3 and T. Takenobu 1,3,4, 1 Waseda
Univ., 2 Tokyo Metropolitan Univ., 3 JST-CREST
and 4 JST-PRESTO, Japan

A. Fallahgilvaei and Y. Nakayama, Osaka Univ.,
Japan

F.-Y. Chang 1, C.-M. Liu 2, T.-M. Chen 1andC.-M. Chen 1, 1 Natl. Taiwan Univ. of Sci. andTechnol. and 2 ITRI, Taiwan

26P-7-39
Preparation of Pt-decorated CNTs by
DCC-activatedAmidationandInvestigation of their Electrochemical
Properties
Y.H. Kim and H.C. Choi, Chonnam Natl. Univ.,
Korea

Nanodevices
26P-7-41
Speed
Enhancementof
WSi2
Nanocrystals Memory with Barrier
Engineered Si3N4/HfAlO Tunnel Layer

26P-7-42
Channel Recessed 1T-DRAM with ONO
Gate Dielectric

26P-7-43
Resistive Switching Effects in Ultrathin
Metallic Junctions with Nanometer-scale
Gap of Various Metals

26P-7-44
Characteristics of Gate-all-around Poly-Si
Nanowire TFT SONOS Nonvolatile
Memory26P-7-45
Demonstration of ALD-TiN Gate FinFET
with TDMAT Precursor for WFV Reduction

26P-7-46
Carrier Transport Mechanisms of theProgramming
andRetention
Characteristics for TANOS Flash Memory
Devices

26P-7-48
Memristive Switching in a Single Oxide
Nanowire

D.H. Kim 1, J.H. You 1, D.U. Lee 1, T.W. Kim 1
and K.W. Lee 2, 1 Hanyang Univ. and Hynix
Semiconductor, Korea

26P-7-47
Novel Protruded-shape Unipolar RRAM
Structurefor
improving
Switching
Uniformity through Excellent Conductive
Filament Controllability

K.-C. Ryoo 1,2, J.-H. Oh 1,2, S. Jung 1, H.
Jeong 2 and B.-G. Park 1, 1 Seoul Natl. Univ.
and 2 Samsung Electronics, Korea

26P-7-49
Tri-gate Flash Memory with Improved IPD
Layer

26P-7-50
Apply Low Energy Excimer Laser
Annealing to improve Gold Nanocrystals
Embedded Silicon Dioxide Thin Film

26P-7-51
DirectAnalysisofBackscattering
Phenomenon from Drain Region of Silicon
Nanodiode using NEGF Approach

26P-7-53
Extraction
for
Substrate-related
Components of Vertical Junctionless
Silicon Nanowire Field-effect Transistors
and its Verification on RF Characteristics

26P-7-54
Effects of Contact Size and Schottky
Barrier Height on Nanoscale Contact
Resistance

26P-7-40
Multi-bit Characteristics of Cr/InSbTe(IST)/TiN Phase Change Memory Array
Y.T. Kim 1, E.-B. Lee 1,2, Y.H. Kim 1 and C.K.
Kim 1, 1 KIST and 2 Samsung Electronics,
Korea

D. Ishida, K. Kobayashi, K. Matsushige and H.
Yamada, Kyoto Univ., Japan

T. Kamei 1, Y.X. Liu 2, T. Matsukawa 2, K. Endo2, S. O'uchi 2, J. Tsukada 2, H. Yamauchi 2, Y.
Ishikawa 2, T. Hayashida 1, K. Sakamoto 2, A.
Ogura 1 and M. Masahara 1,2, 1 Meiji Univ. and2 AIST, Japan

26P-7-52
Single-string Carbon Nanotube Field
Effect Transistors fabricated by Two-step
Dielectrophoresis
T.G. Kim 1, J.S. Hwang 1, Y.S. Yu 2, M.G. Kang
1 and S.W. Hwang 1, 1 Korea Univ. and 2
Hankyong Natl. Univ., Korea

D.U. Lee 1, H.J. Lee 1, E.K. Kim 1, H.-w. You 2
and W.-J. Cho 2, 1 Hanyang Univ. and 2
Kwangwoon Univ., Korea

T.-Y. Liu, P.-C. Huang, C.C. Chen and J.-T.
Sheu, Natl. Chiao Tung Univ., Taiwan

K.-Y. Shen, Y.-Y. Wu and C.-H. Kuan, Natl.
Taiwan Univ., Taiwan

S. Shin 1, I.M. Kang 2 and K.R. Kim 1, 1 Ulsan
Natl. Inst. of Sci. & Technol. and 2 Kyungpook
Natl. Univ., Korea-6-J.-K. Park and W.-J. Cho, Kwangwoon Univ.,
Korea

T. Hayashida 1,2, K. Endo 3, Y.X. Liu 3, S.
O'uchi 3, T. Matsukawa 3, W. Mizubayashi 3, S.
Migita 3, Y. Morita 3, H. Ota 3, H. Hashiguchi 1,
D. Kosemura 1, T. Kamei 1, J. Tsukada 3, Y.
Ishikawa 3, H. Yamauchi 3, A. Ogura 1 and M.
Masahara 1,3, 1 Meiji Univ., 2 JSPS and 3 AIST,Japan

T. Yanagida 1, K. Nagashima 1, K. Oka 1, M.
Kanai 1, B.H. Park 2 and T. Kawai 1,2, 1 Osaka
Univ., Japan and 2 Konkuk Univ., Korea

T. Tsutsumi and K. Tomizawa, Meiji Univ., Japan

M.W. Ryu, Y. Kim, and K.R. Kim, Ulsan Natl.
Inst. of Sci. & Technol., Korea

26P-7-55
Fabrication and Transport Properties in
InAs-based Self Switching Nano-diodes
T. Kiso 1, K. Nishisaka 1, T. Maemoto 1, S. Sasa
1, S. Kasai 2 and M. Inoue 1, 1 Osaka Inst. ofTechnol. and 2 Hokkaido Univ., Japan

26P-7-58
ThermalCharacteristics
ofSingle-electron-pump RefrigeratoraH. Ikeda 1, K. Miwa 1 and F. Salleh 1,2,
Shizuoka Univ. and 2 JSPS, Japan

26P-7-142L
ChannelThickness
Effectof
Capacitorless Dynamic Random Access
Memoryon
Silicon-On-Insulator
Substrate
S.-M. Jung and W.-J. Cho, Kwangwoon
Univ., Korea

26P-7-56
Extreme Shrinkage of Carbon Nanotubes
induced by Supersonic Stress and
Low-acceleration
Electron
Beam
Irradiation

26P-7-57
Transport Electron Scattering due to
Structural Defects in InSb Quantum Wells

26P-7-140L
Impact of ZrO2 on Electron Trapping
Behavior in 28 nm HKMG nMOSFETs
by RTN Analysis

26P-7-141L to 26P-4-5L
Tunneling
Field-Effect
L-Shaped
Transistors(TFETs)for
Low
Subthreshold Swing and High Current
Drivability

T.D. Mishima and M.B. Santos, Univ. of
Oklahoma, USA

T. Takahashi 1,2, R. Ueki 1,2, T. Hikata 3, S.
Okubo 3, R. Utsunomiya 4, T. Matsuba 4 and J.
Fujita 1,2, 1 Tsukuba Res. Ctr. forInterdisciplinary Materials Sci., 2 Univ. of
Tsukuba, 3 Sumitomo Electric and 4 Nissin
Electric, Japan

S.C. Tsai 1, S.L. Wu 2, B.C. Wang 1, S.J.
Chang 1, J.F. Chen 1, P.C. Huang 1, D.G.
Hong 2, C.H. Hsu 3 , C.W. Yang 3, C.M. Lai
3, C.W. Hsu 3, O. Cheng 3, 1 National Cheng
Kung Univ., 2 Cheng Shiu Univ. and United
Microelectronics, Taiwan

S.W. Kim 1, W.Y. Choi 2, M.-C.Sun 1, H.W.
Kim 1, J.-H. Lee 1, H. Shin 1 and B.-G. Park1, 1 Seoul Nat. Univ. and 2 Sogang Univ.,
Korea

26P-7-143L
Influence of Backgate Voltage on Spin
Accumulation in a Silicon Nanowire Spin
Valve
J. Tarun,1,2, S. Huang 1, Y. Fukuma 1, H.
Idzuchi 4, Y. Otani 1,4, T. Kodera 2, N.
Fukata 3, K. Ishibashi 1,2 and S. Oda 2, 1
RIKEN, 2 Tokyo Inst. of Technol., 3 NIMS
and 4 Univ. of Tokyo, Japan

Nanofabrication
26P-7-59
Si based High-index-contrast-grating
Structure fabricated by High Temperature
Cl2 Inductively Coupled Plasma Etching
using Thermal Nanoimprint Resist Mask

26P-7-60
Trimming Lithography: An Effect ofMulti-exposures Dose and Mask-shifted
Position to the Sub-resolution Pattern Sizeand the Pattern Density

26P-7-61
Rapid Fabrication of Sub-10-nm Silicon
Pillars using a Natural Mask with RIE,
Piranha Oxidation, and HF Wet Etching

26P-7-62
Excimer Laser Crystallization of a-Ge
Quantum Dot Arrays on Si Substrate

26P-7-63
SynthesisofSemiconducting
3-D"Nano-tree" Hierarchical Nanostructures

26P-7-64
Fabrication
andReplicationofHemispherical Dome-shaped Hyperlens
Array

A. Matsutani 1, Y. Hashidume 1, H. Ohtsuki 3
and F. Koyama 2, 1 Tokyo Inst. of Technol. and
2 Samco Internatl., Japan

A. Sriklat 1, N. Atthi 2, W. Jeamsaksiri 1, C.
Hruanun 2, A. Poyai 2 and R. Silapunt 1, 1 King
Mongkut's Univ. of Technol. and 2 Natl.
Electronics & Computer Technol. Ctr., Thailand

N. Atthi, K. Imai, J. Supadech, W. Jeamsaksiri,
C. Hruanun and A. Poyai, Natl. Electronics&Computer Technol. Ctr., Thailand

T.-W. Liao, Y.-K. Wu, C.-W. Chiu, H.-M. Chen
and C.-H. Kuan, Natl. Taiwan Univ., Taiwan

G.-J. Shin 1, J.-H. Lim 2, Y.-I. Lee 1, Y.-H. Choa
1 and N.V. Myung 3, 1 Hanyang Univ., 2 KIST,
Korea and 3 Univ. of California-Riverside, USA

26P-7-65
Fabrication of Nanocone Subwavelength
Antireflection Structures on Quartz
Substrate

26P-7-66
Molecular Dynamics Study on the
Enhancementof
CoverageofTrench-filling with Higher Aspect Ratio

26P-7-67
Electronic States Formation by Surface
Atom Removal on a MoS2 Surface

26P-7-68
Pattern Transfer Characterization after
Multi-level Lithography for a Fabrication of
the 3-D AlTiC Air Bearing Surface of theHard Disk Slider

26P-7-70
Fabrication of GaNAs/AlGaAs Quantum
Well Solar Cells

P. Pholprasit 1, 2, N. Atthi 2, T. Thammabut 3,
W. Jeamsaksiri 1, C. Hruanun 2, A. Poyai 2 andR. Silapunt 1, 1 King Mongkut's Univ. ofTechnol., 2 Natl. Electronics & Computer
Technol. Ctr. and 3 Western Digital, Thailand

26P-7-69
Thickness Dependence Characteristics of
Aluminium-doped Zinc Oxide Nanorod
Array-based Ultraviolet Photoconductive
Sensor

M.H. Mamat, N.I. Ishak, Z. Khusaimi, M.Z.
Musa, M. Salina, N.D.Md. Sin, U.M. Noor and
M. Rusop, Univ. Teknologi MARA, Malaysia

26P-7-71
High-aspect-ratio Carbon Nano-rod Tips
carried out from scanning Electron Beam
Deposition

26P-7-72
Fabrication Metal Thin Film Pattern in theAir

26P-7-73
Nano-hole Array Patterned
Fabrication by ICP-RIE

26P-7-74
Photolithography
with
Periodic
Multilayered Resist Film for Photonic
Crystals

26P-7-75
Surface, Structural, Optical, and Electrical
Properties of Reactively Sputtered ZnOThin Films with Oxygen Pressure

Y.-H. Tang, M.-J. Huang , J.-Y. Su , W.-H. Choand M.-H. Shiao, Natl. Applied Res. Labs,
TaiwanR.-T. Hong 1 and J.-Y. Yang 2, 1 China Univ. ofSci. & Technol. and 2 Natl. Taiwan Univ., Taiwan

M. Onoue and H. Ushijima, AIST, Japan

M.-N. Chang 1, Y.-H. Ku 1, P.-L. Chen 2, J. Su 2,
M. Li 3 and A. Nemcsics 4, 1 Natl. Chung Hsing
Univ., 2 Natl. Applied Res. Labs, 3 Natl. Chiao
Tung Univ. and 4 Obuda Univ., Taiwan

M. Shimoda, K. Nagato, T. Hamaguchi and M.
Nakao, Univ. of Tokyo, Japan

I.-S. Park, Y.-W. Kim, H. Park, D.-K. Choi and J.
Ahn, Hanyang Univ., Korea-7-

P.L. Chen 1, M.J. Huang 1, C.C. Chen 1, C.Y.
Su 1, Y.H. Lin 1, N.N. Chu 1, M.H. Shiao 1 andH.N. Lin 2, 1 ITRI and 2 Natl. Tsing Hua Univ.,
TaiwanN. Kodama 1, T. Hasegawa 1,2, T. Tsuruoka
1,2, C. Joachim 3 and M. Aono 1, 1 NIMS, 2
JST-CREST, Japan and 3 CEMES, France

M. Elborg 1,2, T. Noda 1, T. Mano 1, M. Jo 1 andK. Sakoda 1,2, 1 NIMS and 2 Univ. of Tsukuba,
Japan

Sapphire

C.M. Chang 1,2, D. Chiang 1, M.H. Shiao 1,
C.T. Yang 3, M.J. Huang 1 and W.J. Hsueh 2, 1
Natl. Applied Res. Labs, 2 Natl. Taiwan Univ.
and 3 ITRI, Taiwan

Nanomaterials
26P-7-76
Fabrication and Characterization BZCYYb
Electrolyte Thin Films by E-beam
Technique for IT-SOFC
Y.S. Hong, H.W. Choi and H.H. Yoon,
Kyungwon Univ., Korea

26P-7-79 Withdrawn
Explanation of Thermoelectric Power andResistivity of Zn Nanowires

D. Prasad 1,2, K.K. Choudhary 1, N. Kaurav 3
and I. Mansuri 2,4, 1 Shri Vaishnav Inst. ofTechnol. & Sci., 2 Venkteshwar Inst. of Technol.,
3 Holkar Sci. College and 4 Devi Ahilya Univ.,
India

26P-7-82
Effect of Solvent on the Dielectric
Properties of Nanocomposite PMMA:TiO2
Dielectric Films
L.N. Ismail, N.N. Hafizah, M.S Samsudin, S.H.
Herman and M. Rusop, Univ. Teknologi MARA,
Malaysia

26P-7-77
Oxygen Vacancy Chain Formation Energyof Rutile TiO2 under Various Pressure
Conditions and Electric Field: ab initio
Calculations

26P-7-78
First Principles Study on Pr Doped Ceria
and Pure Ceria of the Defective Structure
considering Pressure Effect

26P-7-80
First-principles
Simulationof
Pyroelectricity
inSingle-domain
Ferroelectric Bulks and Nanofilms

26P-7-81
Synthesis of TiO2
Hydrothermal Method

26P-7-83
Electronic Transport Properties in Singly
Crystalline TiO2 Nanorods

26P-7-84
In situ High-resolution Transmission
Electron
Microscopy
of
Pt-Au-Pt
Nanojunctions

D.S. Yoo, K. Ahn, S.B. Cho and Y.-C. Chung,Hanyang Univ., Korea

K. Nakamura 1,2, 1 Kyoto Univ.,Japan and 2
Egypt-Japan Univ. of Sci. & Technol., Egypt

H.Y. Tsai, C.A. Chen, W.C. Wang, R.S. Chen,
Y.S. Huang, Natl. Taiwan Univ. of Sci. &Technol., Taiwan

K. Ahn 1,2, D.S. Yoo 1, J.-h. Lee 2 and Y.-C.
Chung 1, 1 Hanyang Univ. and 2 KIST, Korea

Nanowires

byM.N. Asiah, M.F. Achoi, S. Abdullah and M.
Rusop, Univ. Teknologi MARA, Malaysia

S. Kodama and T. Kizuka, Univ. of Tsukuba,Japan

26P-7-86
Preparation of p-CuO/n-ZnO Nanowire
Heterojunction Arrays filled with PMMA
and their Optoelectronic Characteristics

26P-7-87 Withdrawn
Synthesis and Application of
Nanowires in Touch Panel Displays

26P-7-88 Withdrawn
Effect of Nano-AlN in Epoxy on Heat
Dissipation and Luminous Flux ofHigh-brightness Light Emitting Diode
Packages

26P-7-89
Influence of RF Magnetron Sputtering
Condition on the ZnO Passivating Layer
for Dye Sensitized Solar Cells
S.W. Rhee, K.H. Kim and H.W. Choi, Kyungwon
Univ., Korea

26P-7-90
Preparation of a Bimetallic Catalyst
Layered Anode for Direct Biogas-fueled
Solid Oxide Fuel Cells

N.N.T. Quynh, Y.S. Hong and H.H. Yoon,
Kyungwon Univ., Korea

26P-7-91
Optimization of Seeded Catalyst Layer for
the Growth of Vertically Aligned Al-doped
ZnO Nanorods Array for Optoelectronic
Applications

26P-7-92
A New Synthetic Approach for the
Prepatationof
Au-Ag
Composite
Nanorods through Proton Beam Irradiation

26P-7-93
Carrier Transport Mechanisms of Organic
Bistable
DevicesutilizingHybrid
C60/polymethylmethacrylate
Nanocomposites

26P-7-94 Withdrawn
Nanostructuring of Polyurethanes byHighly Ordered Coordination Compoundsof Transition Metals

26P-7-95
Novel Nanohybrids of Silver Particles on
Clay Platelets for inhibiting Silver-resistantBacteria

26P-7-96 Withdrawn
Preparation and Characterization of Low
Dielectric Constant Polyimide Nanofoams

26P-7-97 Withdrawn
Fabrication of Poly(9,9'-dioctylfluorene)-based Nano-micro Structures by Proton
Beam Writing

26P-7-98
Preparation and Characteristic of Room
Temperature Ethanol Sensor based on
Laterally Oriented ZnO Nanowires

26P-7-99
In Situ High-resolution Transmission
Electron
MicroscopyofTungsten
Nanocontacts and Atomic-sized Wires

26P-7-144L
Recent Development in Electron Energy
Loss Spectroscopy and its Applications
to Nanomaterial Analysis

26P-7-145L
Highly-Sensitive
Differential-Mode
Detection of Biomolecules Using Dual
Extended-Gate MOSFETs

A. Maigné, Gatan, Japan

J. Choi, H.-H. Lee, J.-I. Ahn, S.-H. Jo and
J.-K. Shin, Kyungpook National Univ., Korea

26P-7-85
Formation of Silver Nanogaps using
Electromigration

H. Masuda and T. Kizuka, Univ. of Tsukuba,Japan

B.-J. Li 1, C.-H Chang 1, Y.-K. Su 1, B. Chen 2
and K.-J. Gan 3, 1 Natl. Cheng Kung Univ., 2
Delta Electronics and 3 Natl. Chiayi Univ.,
TaiwanM.F. Malek, M.H. Mamat, M.Z. Sahdan, M.Z.
Musa, Z.Khusaimi and M. Rusop, Univ.
Teknologi MARA, Malaysia

I.M. Davletbaeva, A.M. Gumerov and R.S.
Davletbaev, Kazan State Technol. Univ., Russia

Y. Maeyoshi 1, K. Takano 1, A. Asano 1, H.
Marui 1, M. Omichi 1, T. Satoh 2, T. Kamiya 2, Y.
Ishii 2, T. Ohkubo 2, M. Koka 2, W. Kada 2, M.
Sugimoto 2, H. Nishikawa 3, A. Saeki 1 and S.
Seki 1, 1 Osaka Univ., 2 JAEA and 3 Shibaura
Inst. of Technol., Japan

Y.-C. Tu 1, S.-J. Wang 1, F.-S. Tsai 1, Y.-W. Hsu
1, J.-C. Lin 1 and S.-I Tsai 2, 1 Natl. Cheng
Kung Univ. and 2 Natl. Univ. of Kaohsiung,TaiwanY.-J. Kim 1 and J.H. Song 2, 1 Chungnam Natl.
Univ. and 2 Sunchon Natl. Univ., Korea

H.-L. Su 1, S.-H. Lin 1, J.-C. Wei 2 and J.-J. Lin
2, 1 Natl. Chung Hsing Univ. and 2 Natl. Taiwan
Univ., Taiwan

F.-S. Tsai, S.-J. Wang, Y.-C. Tu and J.-C. Lin,
Natl. Cheng Kung Univ., Taiwan

Ag

J.-W. Kim, Y.-S. Kim, M.-G. Kwak and S.-J.
Hong, Korea Electronics Technol. Inst., Korea

C.H. Yoo, S.H. Ko and T.W. Kim, Hanyan Univ.,
Korea

E. Aram and S. Mehdipour-Ataei, Iran Polymer& Petrochemical Inst., Iran

H. Masuda and T. Kizuka, Univ. of Tsukuba,Japan

Nanoimprint, Nanoprint and Rising Lithography
26P-7-100
Approach for Actual Line Width
Measurement of 45 nm-hp UV-NIL
Patterns by Extremely Shallow Si Etching
K. Suzuki 1,2,3, S.-W. Youn 2,3, Q. Wang 2,3,
H. Hiroshima 2,3 and Y. Nishioka 1, 1 Nihon
Univ., 2 AIST and 3 JST-CREST, Japan

26P-7-101
Nanoimprint Roller Stamp Fabrication
using
Projective
Step-and-flash
Lithography and Electroless Nickel (EN)
Deposition

C.-L. Wu, Y.-C. Chu, Y.-C. Tsai and C.-K. Sung,
Natl. Tsing Hua Univ., Taiwan-8-

26P-7-102
Impact of Resist Shrinkage for 3D Patternsin Nanoimprint Lithography

A. Horiba 1,2, N. Nishikura 1,2, R. Suzuki 1,2,
M. Yasuda 1,2, H. Kawata 1,2 and Y. Hirai 1,2, 1
Osaka. Pref. Univ. and 2 JST-CREST, Japan

26P-7-103
Whole-field Real-time Monitoring of Filling
Process in UV Nanoimprint Lithography

Q. Wang 1,2, H. Hiroshima 1,2, K. Suzuki 1,2
and S.-W. Youn 1,2, 1 AIST and 2 JST-CREST,Japan

26P-7-104
Throughput of UV Nanoimprint inPentafluoropropane using Spin Coat Films
under Thin Residual Layer Conditions

26P-7-105
Simulation of the Resist Filling Time in 2-D
and 3-D Patterns in UV Nanoimprint under
Condensable Gas Ambient

H. Hiroshima 1,2 and K. Suzuki 2,3, 1 AIST, 2
JST-CREST and 3 Nihon Univ., Japan

R. Suzuki 1,3, Y. Nagaoka 1, H. Hiroshima 2,3,
H. Kawata 1,3 and Y. Hirai 1,3, 1 Osaka Pref.
Univ., 2 AIST and 3 JST-CREST, Japan

26P-7-106
Thermal and Chemical Behaviors of
0.2-nm-high Stepped Glass Substrate
SurfacefabricatedbyThermalNanoimprint Process

26P-7-107
Formation Mechanisms of Pattern Defects
in Nanoimprint Lithography

26P-7-108
FabricationofRelatively
Large
Microstructures on Polyimide using Hot
Embossing

26P-7-109
Double Pattering by Room-temperature
Nanoimprint using Organic Spin-on-glass

26P-7-110
Fabricated Various Metallic Nano Patternusing Ag Printing Technique

Y. Miyake 1, G. Tan 1, H. Oi 2, M. Mita 2, K.
Sunagawa 3, S. Kaneko 1,4 and M. Yoshimoto
1, 1 Tokyo Inst. of Technol., 2 Kyodo Internatl., 3
Namiki Precision Jewel and 4 Kanagawa
Industrial Technol., JapanM. Okada 1,2,3, Y. Haruyama 1,2 and S. Matsui
1,2, 1 Univ. of Hyogo, 2 JST-CREST and 3
JSPS, JapanY. Watanabe 1,2, H. Kawata 1,2, M. Yasuda 1,2
and Y. Hirai 1,2, 1 Osaka Pref. Univ. and 2 JST–CREST., Japan

R. Ikoma 1, H. Komatsuzaki 1, K. Suzuki 1, T.
Komori 1, K. Kuroda 1, H. Saitou 1, S.-w. Youn
2, M. Takahashi 2, R. Maeda 2 and Y. Nishioka
1, 1 Nihon Univ. and 2 AIST, Japan

26P-7-111
Properties of Microcontact Printing for
Accurate and well-controlled MEMS
Fabrication Processes

S.-C. Oh, S.-H. Lee, K.-I. Kim and H. Lee, Korea
Univ., Korea

T. Jean and N. Miki, Keio Univ, Japan

26P-7-112
Detection of DNA Immobilization andHybridization using Micro-grating Optical
Biosensor

26P-7-113
A Simple Capacitive Sensor Array tomeasure Meso-scale Humidity Variation

26P-7-114
Photochemically Induced Crystallization ofProteins promoted on the Plasmonic Chip

26P-7-115
Fluorescence Microscopic Observation of
Neurons on a Plasmonic Chip

26P-7-116
A Microfluidic Chip with Microweir
StructureforContinuous
SampleSeparating and Collecting Applications

26P-7-117
FabricationofBioanodefor
Glucose/Oxygen Biofuel Cells by Glucose
Oxidase Immobilization in a CNT Film

26P-7-119
Sensitivity Enhancement of Immuno-pillar
Chip using Magnetic Beads Stirrer

26P-7-146L
Performance of NWFET-type Biosensor
with a Microfluidic Channel

BioMEMS, Lab on a Chip

N. Atthi 1, N. Chathirat 2, T. Osotchan 2, S.
Dangtip 2, W. Jeamsaksiri 1, C. Hruanun 1 and
A. Poyai 1, 1 Natl. Electronics & Computer
Technol. Ctr. and 2 Mahidol Univ., Thailand

C. Yasui 1,2, K. Tawa 1, C. Hosokawa 1, J.
Nishii 3, H. Aota 2 and A. Matsumoto 2, 1 AIST,
2 Kansai Univ. and 3 Hokkaido Univ., Japan

26P-7-118
Electrokinetic Protein Preconcentration
using Nanogaps generated by Electric
Breakdown at the Junction Gaps

C.-C. Kuo and C.-P. Jen, Natl. Chung Cheng
Univ., Taiwan

H.H. Lee 1, J. Choi 1, J. Ahn 1, C.-S. Kim 2 andJ.-K. Shin 1, 1 Kyungpook Natl. Univ., Korea
and 2 Missouri Univ. of Sci. & Technol., USA

S.K. Hsiung 1, H.C. Lee 2, S.R. Lin 1 and C.H.
Lin 2, 1 Fooyin Univ. and 2 Natl. SunYat-Sen
Univ., Taiwan

T. Kasama 1,2, M. Tokeshi 1,2 and Y. Baba
1,2,3, 1 Nagoya Univ., 2 "The Knowledge Hub"of Aichi and 3 AIST, Japan

K. Tawa 1, S. Haruta 1,2, T. Okutsu 2 and J.
Nishii 3, 1 AIST, 2 Gunma Univ. and 3 Hokkaido
Univ., Japan

S.Y. Lee, N. Lee and H.H. Yoon, Kyungwon
Univ., Korea

S.-I. Kim, Y.H. Kim, C.K. Kim and Y.T. Kim,
KIST, Korea

26P-7-147L
A Novel Flow Sequencing Method on
Centrifugal Microfluidic Device using‘’Liquid Clock’’
Y. Ukita 1, Y. Takamura 1 and Y. Utsumi 2, 1
JAIST and 2 Univ. of Hyogo, Japan

Microsystem Technology and MEMS
26P-7-121
Using Electroless Nickel Plating Process
to fabricate the CMOS-MEMS RF Probewith Amplitude Detector Circuits

26P-7-122
MEMS Contact of Test Socket for BGA IC
Packages

J.-T. Huang, G.-T. Jheng, K.-Y. Lee, C.-K. Chen
and T.- C. Tsai, Natl. Taipei Univ. of Technol.,TaiwanD. Lee 1,2, O.-h. Kwon 2, P.-H. Hong 2, J. Kim
3, J. Jeon 1,4, C. Cho 1, B. Kim 5 and J. Lee 1,
1 Kyungpook Natl. Univ., 2 M2Lab, 3 AITECH, 4
eFree System and 5 Catholic Univ. of Daegu,
Korea

26P-7-123
Magnetic Micro Actuator using Interactive
Force between Magnetic Elements

26P-7-124
Micromachined Inductor integrated with
the Patterned Ferromagnetic Film

26P-7-125
Square-patterned
Infrared Emitter

26P-7-126
Fabrication of Electrostatically-driven
Fused Quartz Double-ended Tuning Fork
(DETF) Resonator using Quartz-on-quartz
Bunding Technique

26P-7-127
High Sensitivity Fiber-optic Fabry-perot
Interferometer Temperature Sensor

26P-7-128
Electrowetting
Lens
employing
Hemispherical Cavity formed by HNA
Etching

26P-7-129
The
Distributed
Bragg
Reflectors
Waveguide infiltrated by Liquid-crystal

26P-7-130
Development of a New Exposure Tool for
Laser-scan Delineation of Precise Helical
Patterns onto Sub-50-micron Wires

26P-7-120
A New Application of EN-based Cantilever
for CMOS-MEMS Probe

K.-Y. Lee, J.-T. Huang, H.-J. Hsu, G.-T. Jheng,
C.-K. Chen and T.- C. Tsai, Natl. Taipei Univ. ofTechnol., Taiwan

K. Hatama, F. Tsumori, Y. Xu, H. Kang and H.
Miura, Kyushu Univ., Japan

E.-S. Song 1, S.-M. Kang 2, K.-J. Park 2, H. Kim
2, Y.-K. Kim 1, J.-E. Ahn 3 and C.-W. Baek 2, 1
Seoul Natl. Univ., 2 Chung-Ang Univ. and 3
Agency for Defense Develop., Korea

D.-P. Cai, H.-Y. Pan and C.-C. Chen, Natl. Ctrl.
Univ., Taiwan

Y.-C. Huang 1, B.-W. Jang 2, C.-L. Wu 2 and W.
Fang 1, 1 Natl. Tsing Hua Univ. and 2 ITRI,
TaiwanX. Li, S. Lin, J. Liang, H. Oigawa and T. Ueda,
Waseda Univ., JapanT. Horiuchi and R. Sasaki, Tokyo Denki Univ.,
Japan

-9-

TiN

Narrow-band

J.T. Song 1, J.H. Park 1, J.C. Choi 1, H.T.
Miyazaki 2 and S.H. Kong 1, 1 Kyungpook Natl.
Univ. and 2 NIMS, Japan

J.K. Lee 1, H.-R. Kim 1, E. Jeong 2, W.I. Jang 2
and S.H. Kong 1, 1 Kyungpook Natl. Univ. and 2
Electronics & Telecommunications Res. Inst.,
Korea

26P-7-131
Atmospheric
Non-thermal
Pressure
Plasma-jet System for PDMS Bonding
Process

K. Kim 1, G. Kim 1, Y. Oh 2, T.-G. Park 3, D.C.
Han 3 and S.S. Yang 1, 1 Ajou Univ., 2 AMEDand 3 Seoul Natl. Univ., Korea

26P-7-132
Inkjet Printed Polymer Micro Rivet

S.-A. Kuo, G.-H. Lu and C.-Y. Lo, Natl. Tsing
Hua Univ., Taiwan

26P-7-133
Metalized
MovableMicrostructures
produced by the Combination of
Two-photon
Microfabrication
andElectroless Plating

26P-7-134
High-resolution Wet Etching Technology ofElectroless Nickel Alloy Film on HighTopography Surface for MEMS Application

26P-7-136
Direct Photo-etching of Fluorocarbon
Polymers induced by High Energy
Synchrotron Radiation

26P-7-137
Catalytic
EtchingforMicro-scale Silicon Structure

T. Ikegami 1, M.P. Stocker 2, K. Monaco 2, J.T.
Fourkas 2 and S. Maruo 1, 1 Yokohama Natl.
Univ., Japan and 2 Univ. of Maryland, USA

26P-7-135
Fabrication of pn Junction at the Wall of
Deep Trench for Near-infrared Sensor

A. Baba, N. Uryu and S. Sumi, Kyushu Inst. ofTechnol., Japan

26P-7-148
Fabrication of BeCu Probe Array using
Heating and Fusing Current

D. Lee 1, S. Kim 1, D. Kong 1, C. Cho 1, B. Kim
2, J. Lee 1 and O.-H. Kwon 1, 1 Kyungpook
Natl. Univ. and 2 Catholic Univ. of Daegu, Korea

H. Kido 1, M. Ishizawa 1, T. Azeta 1, Y. Ukita 2
and Y. Utsumi 2, 1 Univ. of Hyogo and 2 JAIST,Japan

26P-7-149
Vertical Direction MEMS Probe Card

B. Kim 1, B. Lee 2, H.C. Kim 3 and K. Chun 4, 1
Catholic Univ. of Daegu, 2 Korea Univ. ofTechnol. & Edu. 3 Univ. of Ulsan and 4 Seoul
Natl. Univ., Korea

Room A and P (2F)
Banquet18:30-20:30
Prof. Namba Award Ceremony
Performance by Maiko/Geiko and Samurai Workshop-10-

Y. Zhang 1, A. Toda 2, T. Kobayashi 1, T. Itoh 1
and R. Maeda 1, 1 AIST and 2 Meltex, Japanfabricating

M.J. Huang 1, N.N. Chu 1, C.R. Yang 2, Y.H.
Tang 1, C.M. Chang 1 and M.H. Shiao 1, 1 Natl.
Applied Res. Labs and 2 Natl. Taiwan Normal
Univ., Taiwan

Thursday, October 27
Room A (2F)
27A-8: Nanoimprint, Nanoprint and
Rising Lithography I
Chairpersons:
H. Hiroshima (AIST)
I. Bergmair (PROFAXTOR)
27A-8-1
9:00

Multilayer
Nanoimprint
Lithography
Technology and its Applications (Invited)
J. LEE, Korea Inst. of Machinery & Materials,
Korea

Room B (2F)

Room C (2F)

27B-8: Nanomaterials III
Chairpersons:T. Chikyo (NIMS)

27C-8: Nanofabrication I
Chairpersons:S. Shingubara (Kansai Univ.)
K. Kita (Univ. of Tokyo)

27B-8-1
9:00
Optical Studies of Dislocation-free GaAs
Nano-wires grown on Trenched Si (001)
Substrate by Cathode-luminescence

27C-8-1
9:00
Fabrication and Characterization of
Floating-gate Type MOS Capacitors with
Nanoscale
Triangular
Cross-section
Tunnel Areas

L. Lee 1, K.-F. Chien 1, W.-C. Chou 1, C.-H. Ko
2, C.-H. Wu 2, Y.-R. Lin 2, C.-T. Wan 2, C.H.
Wann 2, C.-W. Hsu 3, Y.-F. Chen 3 and Y.-K. Su
3, 1 Natl. Chiao Tung Univ., 2 Taiwan
Semiconductor Manufacturing and 3 Natl.
Cheng Kung Univ., Taiwan

Y.X. Liu 1, R.F. Guo 1, T. Kamei 2, T. Matsukawa
1, K. Endo 1, S. O'uchi 1, J. Tsukada 1, H.
Yamauchi 1, Y. Ishikawa 1, T. Hayashida 2, K.
Sakamoto 1, A. Ogura 2 and M. Masahara 1, 1
AIST and 2 Meiji Univ., Japan

27A-8-2
9:30
Three-dimensional
Imprint
Molds
fabricated using Femtosecond Laser
Nonlinear Lithography

27B-8-2
9:20
FabricationofNew
PlanarMagnetoelectronic Devices based on
Regularly Arranged MnAs Nanoclusters

27C-8-2
9:20
Electrical Characterization of Flash
Memory Structure with Vanadium Silicide
Nano-particles

27A-8-3
9:50
Optical and Electrical Characterization ofInsertion Structures for Transparent Metal
Electrode prepared by Nanoimprint
Lithography and CMP Process

27B-8-3
9:40
Fabrication and Optical Property of GaAs
Nanowire Array for Solar Cell Applications

27C-8-3
9:40
Stability of Metal Filaments in Solid
Electrolyte BasedResistive Switching
Devices

27A-8-4
10:10
Impact of Polymer Resins on High Aspect
Nano Pattern Replication by Thermal
Nano-imprint Lithography

27B-8-4
10:00
Microscopic Study of the Germanium
Nanowires grown at Low-temperatures by
Au-catalysed Chemical Vapour Deposition

H. Nishiyama 1, Y. Hirata 2 and J. Nishii 1, 1
Hokkaido Univ. and 2 Osaka Univ., Japan

C.-M. Chen, C.-F. Ho, C.-W. Hsieh and C.-K.
Sung, Natl. Tsing Hua Univ., Taiwan

H. Noma 1, J. Sakamoto 1,2, N. Nishikura 1,2,
H. Kawata 1,2, M. Yasuda 1,2 and Y. Hirai 1,2, 1
Osaka Pref. Univ. and 2 JST-CREST, Japan

M.T. Elm 1, P.J. Klar 2 and S. Hara 1,3, 1
Hokkaido Univ., Japan, 2 Justus-Liebig Univ.,
Germany and 3 JST -PRESTO, Japan

E. Nakai 1, M. Yoshimura 1, K. Tomioka 1,2 andT. Fukui 1, 1 Hokkaido Univ. and 2 JST-PREST,Japan

M. Simanullang, K. Usami, T. Kodera, K. Uchida
and S. Oda, Tokyo Inst. of Technol., Japan

27B-8-5
10:20
Memristor using a Single Oxide Nanowire-Performance in Ultra Small Memory andIntrinsic Mechanism-

D. Kim 1, D.U. Lee 1, H.J. Lee 1, S.G. Cho 1,
E.K. Kim 1 and W.-J. Cho 2, 1 Hanyang Univ.
and 2 Kwangwoon Univ., Korea

I. Sapezanskaia 1, A. Nayak 2, I. Valov
1,3, T. Hasegawa 2, R. Waser 1,3 and M.
Aono 2, 1 RWTH-Aachen Univ., Germany, 2
AIST, Japan and 3 Inst. for Solid State Res.,
Germany

27C-8-4
10:00
Additional Electrochemical Treatment
Effects on the Switching Characteristics ofAnodic Aluminum Oxide ReRAM

S. Otsuka 1, R. Takeda 1, S. Furuya 1, H.
Miyake 2, T. Shimizu 2, S. Shingubara 2, N.
Iwata 1, T. Watanabe 1, Y. Takano 1 and K.
Takase 1, 1 Nihon Univ. and 2 Kansai Univ.,Japan

K. Nagashima 1, T. Yanagida 1,2, K. Oka 1, M.
Kanai 1, J.-S. Kim 3, B.H. Park 3 and T. Kawai
1,3, 1 Osaka Univ., 2 JST-PRESTO, Japan and3 Konkuk Univ., Korea

Room P (2F)
Coffee BreakRoom A (2F)
27A-9: Nanoimprint, Nanoprint and
Rising Lithography II
Chairpersons:
A. Yokoo (NTT)J.J. Lee (Korea Inst. of Machinery &Materials)
27A-9-1
10:45
Single and Multilayer Negative Index
Materials fabricated by Nanoimprint
Lithography (Invited)
I. Bergmair 1, B. Dastmalchi 2, M. Bergmair
2, G. Hesser 2, M. Losurdo 3, G. Bruno 3, C.
Helgert 4, E. Pshenay-Severin 4, T. Pertsch4, E.-B. Kley 4, U. Hübner 5, R. Penciu 6,
N.-H. Shen 6, M. Kafesaki 6, C.M. Soukoulis
6, K. Hingerl 2 and M. Muehlberger 1, 1
Profactor GmbH, 2 Johannes Kepler Univ.
Linz, Austria, 3 Friedrich-Schiller-Universität
Jena, 4 Inst. of Photonic Technol., Germany
and 5 Foundation for Res. & Technol.,
GreeceRoom B (2F)

Room C (2F)

27B-9: Nanomaterials IV
Chairpersons:T. Tanii (Waseda Univ.)
T. Chikyo (NIMS)

27C-9: Nanofabrication I
Chairpersons:T. Hasegawa (NIMS)
M. Masahara (AIST)

27B-9-1
10:55
In Situ Observation of Atomistic
Electromigration Processes in Platinum
Nanocontacts

27C-9-1
10:35
Si/Ge Photonics for Communication andSensing Applications (Invited)

S. Kodama and T. Kizuka, Univ. of Tsukuba,
Japan

-11-

Y. Ishikawa, Univ. of Tokyo, Japan

27A-9-2
11:15
Large-area Nanotemplate Process and its
Application to Roll Imprint

Y. Tanoue and K. Sugawa, Nihon Univ., Japan

27C-9-2
11:05
Size Control of Tapered Cones for HighDensity Quantum Dots as 1.55 μm
Emitters

27A-9-3
11:35
A Study on Fabrication Process of
Capacity-equalized Mold by Electron
Beam Lithography and Grayscale Laser
Beam Lithography

27B-9-3
11:35
Electrochemical
CharacterizationofModified Gold Electrode based on Nano
Porous Silicon for Amperometric Urea
Biosensor

27C-9-3
11:25
The 3-D Nanostructure Fabrication bycontrolling
Downward
Growthon
Focused-ion-beam
Chemical
Vapor
Deposition

S.-W. Youn 1,2, S.-C. Park 1, K. Suzuki 1,2, Q.
Wang 1,2 and H. Hiroshima 1,2, 1 AIST and 2
JST-CREST, Japan

D.H. Yun, S.W. Hwang and S.I. Hong, Korea
Univ., Korea

D.J. Guo, R. Kometani, S. Warisawa and S.
Ishihara, Univ. of Tokyo, Japan

27A-9-4
11:55
Step and Repeat UV Nanoimprinting
under Pentafluoropropane Gas Ambient

27B-9-4
11:55
Ultrafast and Efficient Photoresponse up
to Room Temperature by Coherent
Coupling between Excitons and Radiation
Wave

27C-9-4
11:45
Strained
CarbonNanomechanicalResonator Fabrication from SU-8 by
FIB/EB Dual-beam Lithography andAnnealing Treatment

J.-H. Choi, S.-W. Lee, J.-H. Lee, D.-G. Choi,
J.-H. Jeong and E.-S. Lee, Korea Inst. of
Machinery & Materials, Korea

S. Iyoshi 1,5, M. Okada 1,5,6, K. Kobayashi 3,5,
S. Kaneko 3,5, T. Katase 2, K. Tone 2, Y.
Haruyama 1,5, M. Nakagawa 3,5, H. Hiroshima
4,5 and S. Matsui 1,5, 1 Univ. of Hyogo, 2
MEISHO KIKO, 3 Tohoku Univ., 4 AIST, 5
JST-CREST and 6 JSPS, Japan

27B-9-2
11:15
Tuning of the Plasmon Band of Metal
Nanoparticle Thin Films

M. Ichimiya 1,2, H. Yasuda 3, M. Ashida 2, K.
Mochizuki 2, H. Ishihara 3 and T. Itoh 2, 1
Osaka Dent. Univ., 2 Osaka Univ. and 3 Osaka
Pref. Univ., Japan

27A-8, 9 Author's Interview: 12:15-12:25

J.-H. Huh 1, C. Hermannstädter 1, K. Akahane
2, N.A. Jahan 1, H. Sasakura 1, M. Sasaki 2
and I. Suemune 1, 1 Hokkaido Univ. and 2 Natl.
Inst. of Inform. & Communication Technol.,Japan

R. Kometani, K. Kuroda, S. Warisawa and S.
Ishihara, Univ. of Tokyo, Japan

27C-9-5
12:05
Mask-free Patterning and Modifications on
Polysilicon Nanobelt Devices

H.H. Liu, Y.S. Lin and J.T. Sheu, Natl. Chiao
Tung Univ., Taiwan

27B-8, 9 Author's Interview: 12:15-12:25

27C-8, 9 Author's Interview: 12:25-12:35

LUNCH
Room A (2F)

Room B (2F)

Room C (2F)

27A-10: Resists Materials andProcessing
Chairpersons:K. Nozaki (Fujitsu)
K. Okamoto (Hokkaido Univ.)
27A-10-1
13:50
Directly Patternable Metal Oxides as High
Selectivity Resists for Nanofabrication(Invited)

27B-10: Nano-Tool
Chairpersons:S. Akita (Osaka Pref. Univ.)
T. Ono (Tohoku Univ.)

27C-10: Nanofabrication I
Chairpersons:K. Takase (Nihon Univ.)
A. Kohno (Fukuoka Univ.)

27B-10-1
13:50
Optically-driven
Nano
Roboticfor
Advanced Micro Biomedicine (Invited)

27C-10-1
14:00
Integration
Switches

27A-10-2
14:20
In Situ Dissolution Analysis of Ultrathin
EUV Resists

27B-10-2
14:20
Cantilevered
Multilayer
Mechanical Oscillator

27C-10-2
14:20
Oxide Thickness Dependence of a Large
Magnetoresistance
Switching
Phenomenon
inaFerromagnetic
Nano-conduction Path

K. Ikuta, Univ. of Tokyo, Japan

A. Grenville, Inpria, USA

J.J. Santillan and T. Itani, EIDEC, Japan

27A-10-3
14:40
Limit of Line Edge Roughness at High
Exposure Dose in Chemically Amplified
Resists

Graphene

Y. Yuasa 1, A. Yoshinaka 1, T. Arie 1,2 and S.
Akita 1,2, 1 Osaka Pref. Univ. and 2
JST-CREST, Japan

27B-10-3
14:40
Vacuum-packaged Resonant Thermal
Sensor for Biological Cell in Liquid

T. Kozawa, Osaka Univ., Japan

N. Inomata, M. Toda and T. Ono, Tohoku Univ.,
Japan

27A-10-4
15:00
Characterization of Fogging and Develop
Loading
Effects
inElectron-beam
Direct-writing Technology

27B-10-4
15:00
Contactless Determination of Local Sheet
Resistivity
using
Magnetic
Force
Microscopy

J. Kon 1, Y. Kojima 2, Y. Takahashi 2, T.
Maruyama 2 and S. Sugatani 2, 1 Fujitsu Labs
and 2 e-Shuttle, Japan

27A-10 Author's Interview: 15:20-15:30

F. Wakaya, M. Kajiwara, S. Abo and M. Takai,
Osaka Univ., JapanofPhoto-assisted

AtomicT. Hino 1, T. Hasegawa 1, H. Tanaka 2, T.
Tsuruoka 1, Y. Okawa 1, J.P. Hill 1, Y.
Wakayama 1, K. Ariga 1, T. Ogawa 2 and M.
Aono 1, 1 NIMS and 2 Osaka Univ., Japan

K. Shimomura, T. Kato, T. Iwakura, T. Shimizu
and S. Shingubara, Kansai Univ., Japan

27C-10-3
14:40
Transformation from InAs Quantum Dots
to Disks for Reduced Excition-state
Splitting

S. Sakurai, S. Odashima, H. Iijima and I.
Suemune, Hokkaido Univ., Japan

27C-10-4
15:00
Epitaxial-template Structures utilizing GOI
Stripe-arrays and Hexagonal-meshes with
Nano-spacingforAdvanced
Heterogeneous Integration on Silicon
Platform

A.M. Hashim 1,2, M. Anisuzzaman 1, S. Muta 1,
T. Sadoh 1 and M. Miyao 1, 1 Kyushu Univ.,
Japan and 2 Univ. Teknologi Malaysia, Malaysia

27B-10 Author's Interview: 15:20-15:30-12-

27C-10 Author's Interview: 15:20-15:30

Room P (2F)
Coffee Break

27P-11: 15:30-17:30

POSTER SESSION II

Resist Materials and Processing
27P-11-1
Theoretical Study ofPolymers for EUV Resist

IonizationofM. Endo 1,2 and S. Tagawa 1,2, 1 Osaka Univ.
and 2 JST-CREST, Japan

27P-11-4
Acid Generation Efficiency in Resist Films
after Exposure to the 61 nm Free-electron
Laser LightK. Okikawa 1, K. Okamoto 1,2, T. Kozawa 2,3,
T. Hatsui 2, M. Nagasono 2, T. Kameshima 2, T.
Togashi 2,4, K. Tono 2, M. Yabashi 2, H. Kimura
2,4, Y. Senba 4, H. Ohashi 2, R. Fujiyoshi 1 and
T. Sumiyoshi 1, 1 Hokkaido Univ., 2 RIKEN, 3
Osaka Univ. and 4 JASRI, Japan

27P-11-140L
Study on Dissolution Behavior of
Polymer bound PAG and blended PAG
Resists by using Quartz Crystal
Microbalance Method
H. Yamamoto 1,2, T. Kozawa 1,2, S. Tagawa
1,2, 1 Osaka Univ. and 2 JST-CREST, Japan

27P-11-2
Improvements in Pattern Collapse Marginand LWR in Thin-films for both E-beam
and ArF Resists for sub-22nm Patterning

27P-11-3
Alternative Developers for ZEP-520 as aHigh-resolution Positive and Negative
Tone Electron Beam Resist

27P-11-5Fabrication of Submicron Structures by
Thermal Lithography

27P-11-6
Sensitivity of Process Parameters on
Pattern Formation of Litho-cure-litho-etch
Process

I. Servin 1, B. Icard 1, H. Kandraschow 2, J.
Cameron 3, M. Hellion 4, C. Sourd 1, J.
Pradelles 1 and L. Pain 1, 1 CEA-Leti, France, 2Dainippon Screen, Germany, 3 Dow Electronic
Materials, USA and 4 Dow Electronic Materials,
FranceM.A. Mohammad 1, K. Koshelev 1,2, T. Fito 1,2,
M. Stepanova 1,2 and S.K. Dew 1, 1 Univ. ofAlberta and 2 Natl. Inst. for Nanotechnol.
CanadaJ.K. Chen 1, J.W. Lin 1, J.P. Chen 2 and K.C.
Chiu 2, 1 Natl. Taipei Univ. of Technol. and 2
ITRI, Taiwan

S.-K. Kim, Hanyang Univ., Korea

27P-11-141L
Solvated Electron Reaction with Some
Polymer Bound Acid Generators or New
Acid Generators

27P-11-142L
Study on Resist Performance ofPolymer
BoundedPhoto-acid
Generators (PAG) and blended PAG

R. Joshi 1,2, H. Yamamoto 1,2, K. Enomoto
1,2 and S. Tagawa 1,2, 1 Osaka Univ. and 2
JST-CREST, Japan

D.N. Tuan 1,2, H. Yamamoto 1,2 and S.
Tagawa 1,2, 1 Osaka Univ. and 2
JST-CREST, Japan

27P-11-8
Microscopic Raman Mapping of Epitaxial
Graphene on 4H-SiC(0001)

27P-11-9
A Structural Investigation of Carbon
Nanofilaments in the Marimo Carbon
Formation by the Methane Decomposition
with Oxidized Diamond-supported Nickel
Catalysts

Nanocarbons
27P-11-7 to 26P-7-17
Atomic Layer Deposition of Amorphous
Carbon and Multilayer Graphene using
Carbon Tetrabromide as Carbon Solid
SourceT. Choi, H. Kang, J. Yoon, H. Jung and H. Kim,
Yonsei Univ., Korea

R. O 1, A. Iwamoto 1, Y. Nishi 1, Y. Funase 1, T.
Yuasa 1, T. Tomita 1, M. Nagase 1, H. Hibino 2
and H. Yamaguchi 2, 1 Univ. of Tokushima and2 NTT, Japan

27P-11-10
Fabrication of Flexible Thin Film
Transistors using Singlewalled Carbon
Nanotubes and Graphene

27P-11-11
Synthesis and Device Application of
Nitrogen-doped Single-walled Carbon
Nanotubes by Plasma CVD

M. Akutsu, T. Kato, S. Kuroda, T. Kaneko and R.
Hatakeyama, Tohoku Univ., Japan

F. Maeda and H. Hibino, NTT, Japan

27P-11-13
Tailoring Magnetism of Fe on Graphen
with Uniaxial Strains: an Ab initio Study

27P-11-14
Band-gap
EngineeringofHydrogen-potassium Ternary Graphite
Intercalation Compound Thin Films

27P-11-15
Growth and in-situ Observations of
Ferromagnetic
Metal
Encapsulated
Multi-walled Carbon Nanotubes synthesized
by Microwave Plasmaenhanced Chemical
Vapor Deposition

S.J. Kim, S. Aikawa, B. Hou, E. Einarsson, S.
Chiashi and S. Maruyama, Univ. of Tokyo,
Japan

H. Choi and Y.-C. Chung, Hanyang Univ., Korea

Y. Takagi 1,2 and S. Okada 1,2, 1 Univ. of
Tsukuba and 2 JST-CREST, Japan

27P-11-16
Temperature Dependent Resistance ofMulti-wall Carbon Nanotube
E. Kawabe, S. Itaya, K. Hirahara and Y.
Nakayama, Osaka Univ., Japan

27P-11-19
Hole Doping leads to Magnetism in
Nanographene
S. Dutta and K. Wakabayashi, NIMS, Japan

27P-11-17
Graphene Growth from Spin-coated
Polystyrene without a Flammable Gas

S. Suzuki 1, Y. Takei 1,2, K. Furukawa 1 and H.
Hibino 1, 1 NTT and 2 Tokyo Univ. of Sci., Japan

27P-11-20 Withdrawn
Carbon Nanotubes and Carbon Nanocoilsgrown by Chemical Vapor Deposition on
Graphene
SheetsSupported
Pd
Nanoparticles
K.J. Chung 1, C.A. Wang 1, N.W. Pu 1, Y. Sung
2, Y.M. Liu 1 and M.D. Ger 1, 1 Natl. Defense
Univ. and 2 Chung Shan Inst. of Sci. & Technol.,Taiwan-13-

K. Komatsu 1, K. Nakagawa 2, H. Gamo 3, M.
Eguchi 4, T. Ando 5 and M. N-Gamo 1, 1 Toyo
Univ., 2 Kansai Univ., 3 Toppan Printing, 4Ibaraki Univ. and 5 NIMS, Japan

27P-11-12
Formation of Fin-like Ridge-structures ofGraphene on Graphene/SiC(0001) by
Molecular Beam Epitaxy

Y. Hayashi 1, T. Tokunaga 2, Y. Horita 2, T. Iijima
1, T. Yanagimoto 3, K. Kaneko 3, U.
Suryavanshi 1, M. Tanemura 1 and K. Kuroda 2,
1 Nagoya Inst. of Technol., 2 Nagoya Univ. and3 Kyushu Univ., Japan

27P-11-18
Controlling the Graphene Layer in
Thermal Chemical Vapor Deposition by
Substrate Bias

H.-C. Chang, C.-C. Li, Y.-T. Shih, J.-R. Huang,
W.-J. Su and K.-Y. Lee, Natl. Taiwan Univ. ofSci. & Technol., Taiwan

27P-11-21
Synthesis of Iron-encapsulated Carbon
Nanocapsules and Carbon Nanotubes
using Iron-doped Fullerene Nanowhiskers

D. Matsuura 1, K. Miyazawa 2 and T. Kizuka 1,
1 Univ. of Tsukuba and 2 NIMS, Japan

27P-11-22 Withdrawn
Growth of Graphene Thin-films by
Polymer Carbon Source-based Chemical
Vapor Deposition

G.N. Shi 1, N.W. Pu 1, Y.M. Liu 1, N.T. Wen 2, Y.
Sung 2 and M.D. Ger 1, 1 Natl. Defense Univ.
and 2 Chung Shan Inst. of Sci. & Technol.,Taiwan27P-11-25
Fabrication and Characterization of
Carbon Nanotube Sheet drawn from
Vertically Aligned Carbon Nanotube Forest

T. Iijima 1, H. Oshima 2, T. Ito 1, Y. Inagaki 1, Y.
Hayashi 1, U.B. Suryavanshi 1 and M.
Tanemura 1, 1 Nagoya Inst. of Technol. and 2
Denso, Japan

27P-11-28
Thermal Durability of FIB-DLC Films
containing W

A. Fujimoto 1, M. Okada 1, Y. Kang 1, M. Niibe
1, S. Matsui 1, T. Suzuki 2 and K. Kanda 1, 1
Univ. of Hyogo and 2 Nagaoka Univ. of Technol.,Japan

27P-11-31
Growth and Characterization of Carbon
Nanotube on ZnO Films by Microwave
Plasma Jet Chemical Vapor Deposition

C.H. Su and C.M. Huang, Natl. Taipei Univ. ofTechnol., Taiwan

27P-11-145L
Low
Temperature
SynthesisofSingle-Walled Carbon Nanotubes in a
High Vacuum using Pt Catalyst in
Alcohol Gas Source Method
N. Fukuoka 1, Y. Mizutani 1, T. Maruyama 1,
S. Naritsuka 1 and S. Iijima 1,2, 1 Meijo Univ.
and 2 AIST, Japan

27P-11-23 Withdrawn
Enhancing Electron Field Emission
Properties
ofUltra-nanocrystalline
Diamond by growing on Textured Si
Substrate

27P-11-24
An Investigation on Current Saturation
Mechanism of Carbon Nanotube FETs

27P-11-26
Effect of H2O2 Aqueous Solution on
Preferential Inactivation of Metallic Single
Walled Carbon Nanotubes using UV
Irradiation

27P-11-27
Growth of Graphene from SU-8-2002
Photoresist Material on Nickel Substrate

B.P. Algul and K. Uchida, Tokyo Inst. of Technol.,Japan

P.-C. Huang 1, W.-C. Shih 1, K.-Y. Teng 2 andI-N. Lin 2, 1 Tatung Univ. and 2 Tamkang Univ.,
TaiwanH. Tabata, K. Imakoga and M. Katayama,
Osaka Univ., Japan

H. Lee, J. Hong, S.G. Lee, J.-H. Lee, T. Choi, H.
Kang, J. Yoon, H. Jung, H. Kim and T. Lee,
Yonsei Univ., Korea

27P-11-29
Multiple Exciton Generation by a Single
PhotoninSingle-walled
CarbonNanotubes

27P-11-30
Broadband
Patch
AbsorberMulti-walled Carbon Nanotubes

S. Konabe 1,2 and S. Okada 1,2, 1 Univ. of
Tsukuba and 2 JST-CREST, Japan

J.-K. Chuang, C.-J. Hsiao, R.-Y. Fang, C.-L.
Wang and K.-Y. Lee, Natl. Taiwan Univ. of Sci. &Technol., Taiwan

27P-11-143L
Direct Synthesis of Graphene on SiO2
Substrates
Using
Transfer-Free
Processes

27P-11-144L
Impacts of the Access Resistance on the
Channel Conduction Characteristics inGraphene FETs

K. Gumi, Y. Ohno, K. Maehashi, K. Inoue,and K. Matsumoto, Osaka Univ., Japan

M.-H. Jung 1, C. Quan 1, H. Fukidome 1, T.
Suemitsu 1,2, T. Otsuji 1,2 and M. Suemitsu
1,2, 1 Tohoku Univ. and 2 JST-CREST,Japan

27P-11-146L
Local
StrainDistribution
Free-standing
Graphene
Polymethylmethacrylate

using

of
on

T. Kadowaki 1,2, T. Nishijima 1,2, R. Ueki
1,2, and J. Fujita 1,2, 1 Tsukuba Res. Center
for Interdisciplinary Materials Sci. and 2 Univ.
of Tsukuba, Japan

Nanodevices
27P-11-33 Withdrawn
Photoresponse
Behaviour
andMechanism of Multi-walled carbon
Nanotubes-copper Sulphide (Mwnt-cus)
Hybrid Nanostructures

27P-11-34 Withdrawn
Nanoporous Silicon Alcohol Vapor Sensor

27P-11-35
Enhanced Photo-conductivity of Silicon
Nanowiresconjugatedwith
3-aminopropyltriethoxysilane(APTES)-adsorbed Zn(OEP) Molecules

27P-11-36
Effects of Aluminum Doping and Electrode
Distance on the Performance of Aligned
Zinc
Oxide
Nanorod
Array-based
Ultraviolet Photoconductive Sensor

27P-11-37
Designing and Characterization of
Plasmonic Terahertz (THZ) Detectors
based on Silicon MOSFET using
Technology-cad

27P-11-38 Withdrawn
Band-gradedOn-nanowire
Photodetectors

27P-11-39 Withdrawn
Synthesis of Coral-liked Nanobranch TiO2
StructureanditsApplicationtoDye-sensitized Solar Cells

27P-11-40
Control Theory of Near-field Optical
Energy Transfer in One-dimensional
Waveguideconsistingof
Metallic
Nanoparticles by vibrating External Field

27P-11-32
Heterojunction Photodiodes based on
Honeycomb Structures for Ultraviolet
Detection

S.-Y. Tsai 1, J.-H. Lee 2 and M.-H. Hon 1, 1 Natl.
ChengKung Univ. and 2 ITRI, Taiwan

M.S. Choi 1, D.J. Lee 1, Y.S. Kim 1, H.J. Kim 3,
J.H. Lee 1,2, D.H. Yun 1, H.J. Shim 1, S.I. Hong1, D. Whang 1,2 and S.W. Hwang 1, 1 Korea
Univ., 2 Sungkyunkwan Univ. and 3 Kumoh
Natl. Inst. of Technol., Korea

Si:Ge

C.-J. Kim, H.-S. Lee, Y.-J. Cho, J.-E. Yang, R.R.
Lee, J.K. Lee and M.-H. Jo, POSTECH, Korea

27P-11-41
FabricationofOrganic
Electroluminescence Devices by Means ofElectrospray Deposition

H. Anzai, Y. Watanabe and T. Sakamoto,
Kogakuin Univ., Japan

27P-11-44
n-ZnO / InAs QDs / p-GaAs Pillar Structure
prepared as a Single Quantum Dot Emitter
H. Iijima, S. Odashima and I. Suemune,
Hokkaido Univ., Japan

N. Atiwongsangthong, King Mongkut's Inst, ofTechnol., Thailand

Z. Zhan, C. Liu, L. Zheng, G. Sun, B. Li and Q.
Zhang, Nanyang Technological Univ., Singapore

M.H. Mamat, Z. Khusaimi, M.Z. Musa and M.
Rusop, Univ. Teknologi MARA, Malaysia

P.-H. Wang 1, S.-J. Wang 1, P. Chen 1, K.-M.
Uang 2, T.-M. Chen 3 and T.-C. Wang 1, 1 Natl.
Cheng Kung Univ. and 2 WuFeng Univ., Taiwan

H.C. Hwang 1, K. Park 1, W.-K. Park 2, S.-T.
Han 2 and K.R. Kim 1, 1 Ulsan Natl. Inst. of Sci.
& Technol. and 2 Korea Electrotechnol. Res.
Inst., Korea

S. Tanaka 1, H. Hattori 1, S. Hidaka 1 and T. Iida
1,2, 1 Osaka Pref. Univ. and 2 JST-PRESTO,
Japan

27P-11-42
Formation of Nanometer-scale Patternson the n-GaN Surface and its Application
to GaN-based Vertical Light-emitting
Diodes27P-11-43
Light
Extraction
Enhancementof
GaN-based Light Emitting Diodes using
Laser Lithography Technique27P-11-45
Photocurrent Measurements on a
Quantum Cascade Laser Device by
Fourier Transform Infrared Microscope

27P-11-46
Electrical Control of the Exciton Fine
Structure splitting in GaAs Island Quantum
Dots
for
the
Generationof
Polarization-entangled Photons

K.S. Shin 1, H.-M. An 1, J.I. Sim 1, S.J. Kim 1,
S. Oh 2, M. Yoo 2 and T.G. Kim 1, 1 Korea Univ.
and 2 Verticle, Korea

E.C. Enobio, K. Ohtani, Y. Ohno and H. Ohno,
Tohoku Univ., Japan-14-

J.-T. Chen, W.-C. Lai, Y.-J. Kao, Y.-Y. Yang and
J.-K. Sheu, Natl. Cheng Kung Univ., Taiwan

M. Ghali, K. Ohtani, Y. Ohno and H. Ohno,
Tohoku Univ., Japan

27P-11-47
Self-assembled Growth of Ferromagnetic
Semiconductor-ferroelectric
Insulator
Nanocomposite Structures using a Pulsed
Laser Deposition Method

27P-11-48
Collision
Based
ComputingSingle-electron Circuits

using

S. Hayashi and T. Oya, Yokohama Natl. Univ.,
Japan

T. Sakamoto, A.N. Hattori, T. Kanki and H.
Tanaka, Osaka Univ., Japan

27P-11-49
Analysis on Dynamic Behavior of
Thermally
DrivenSingle-electron
Stochastic Resonance

S. Kasai, Y. Shiratori and K. Miura, Hokkaido
Univ., Japan

27P-11-50
Performance Characteristics of Electric
Double Layer Capacitor containing
Graphene as an Electrode Combining
Vertically Aligned Carbon Nanotube and
RuO2 Nanostructures

Y.-T. Shih, C.-C. Li, H.-C. Chang, K.-Y. Lee,
P.-H. Chen, S.-J. Liou, Y.-M. Chen and Y.-S.
Huang, Natl. Taiwan Univ. of Sci. & Technol.,TaiwanNanofabrication

Y. Fujihara, T. Maemoto, S. Sasa and M. Inoue,
Osaka Inst. of Technol., Japan

27P-11-52
Thin Semiconductor Films Deposition
based on Electron Injection into Solutions
from Nanosilicon Ballistic Emitter

T. Ohta, H. Yoshimura, B. Gelloz and N.
Koshida, Tokyo Univ. of Agri. & Technol., Japan

27P-11-53
Local Deposition of Colloidal Gold
Nanoparticles from an AFM Tip using
Dielectrophoresis

27P-11-54
Fabrication of an Ordered Anodic
Aluminum Oxide Pore Arrays with an
Interpore Distance smaller than the
Nano-indentation Pitch formed by Ion
Beam Etching

27P-11-55
Fabrication of 6-nm-sized Nanodots using
Self-assembleofPolystyrene-poly(DimethyI Siloxane)

27P-11-56
Fabricationof
Dense
Phthalocyanine Nano-rod Array

M. Huda, J. Liu, Y. Yin and S. Hosaka, Gunma
Univ., Japan

H. Saeki, M. Nishimoto, Y. Koshiba, M. Misaki,
S. Horie, K. Ishida and Y. Ueda, Kobe Univ.,
Japan

27P-11-57
Stiffened Ribs Design for Micro Products
fabricated by Two-photon Polymerization

27P-11-58 Withdrawn
Thermal Stability of Cu/WN/Si Nano via
Contact Structures
Y.-H. Hwang 1,2, W.-J. Cho 1, Y.H. Kim 2 andY.T. Kim 2, 1 Kwangwoon Univ. and 2 KIST,
Korea

27P-11-59
Nano Order Size ZnO Particles fabricatedby Electro Spray Pyrolysis

Y. Ishikawa 1,2, T. Doe 1,2, M. Horita 1,2, T.
Nishida 1,2 and Y. Uraoka 1,2, 1 Nara Inst. ofSci. & Technol. and 2 JST-CREST, Japan

27P-11-60
Patterning and Carbonization of Block
Copolymer Self-assembled Structures by
Focused-ion-beam

27P-11-61
Influence of Rapid High Temperature
postannealing in Thermal Formation of
Self-organized Nanogroove Array on the
Epitaxial Oxide Thin Film Surface

27P-11-62
Observation of Collective
Motion on a Gold Surface

M. Han and M. Kaneta, Tokyo Inst. of Technol.,Japan

27P-11-63 Withdrawn
Microstructrue and Optical Characteristics
of Ga-doped ZnO Nanowalls byHydrothermal Method

27P-11-64
Large-scale SiGe/Si Superlattice Quantum
Dot Arrays fabricated by Nanosphere
Lithography

S.W. Lee, B.L. Wu and S.L. Cheng, Natl. Ctrl.
Univ., Taiwan

27P-11-65
High Resolution and High Density
Nano-patterning in HSQ using Proximity
Correction

D.K. Brown 1, E. Kim 1, C. Chapin 1, G. Lopez
2, N. Unal 2 and U. Hofmann 2, 1 Georgia Inst.
of Technol., USA and 2 GenISys, Germany

27P-11-66
The Modeling and Correction of Lateral
Resist Development Effects in 3D
Electron-beam Lithography

27P-11-67
Useof
Self-assembled
PeptideNanostructures for the Fabrication of
Silicon Nanowires

27P-11-147L

27P-11-69 Withdrawn
Surface, Structural, and Optical Property
Variation of ZnO Nanoparticles formed on
Si Substrates due to Thermal Treatment

27P-11-70
Silica-encapsulated ZnSe Nanocrystals
prepared by AOT Microemulsions

27P-11-51
Fabrication of High TransconductanceInZnO Transparent Thin Film Transistors
by Sol-gel Method

K. Miyamoto, K. Kaisei, K. Kobayashi, H.
Yamada and K. Matsushige, Kyoto Univ., Japann-typeC. Wang 1, Y. Ishida 1, Q. Wang 1, T.
Yamaguchi 1, S. Tanaka 2, K. Saitoh 1, T.
Shimizu 1 and S. Shingubara 1, 1 Kansai Univ.
and 2 Natl. Inst. of Info. & Communications
Technol., Japan

T.-T. Chung, C.-L. Tseng, C.-P. Hung and C.
Huang, Natl. Taiwan Univ., Taiwan

S. Warisawa, R. Mitsuhashi, R. Kometani and S.
Ishihara, Univ. of Tokyo, Japan

C.-S. Huang 1, J.-Y. Wu 1, S.-J. Young 2, C.-W.
Liu 3 and C.-H. Hsiao 3, 1 Natl. Yunlin Univ., 2
Formosa Univ. and 3 Natl. Cheng Kung Univ.,
TaiwanV.A. Guzenko 1, N. Belic 2, N. Unal 2, A.
Schleunitz 1 and C. David 1, 1 Paul Scherrer
Inst., Switzerland and 2 GenISys, Germany

Molecular

R. Yamauchi 1, K. Kobayashi 2, T. Suzuki 2, G.
Tan 1, D. Shiojiri 1, S. Kaneko 1,3 and M.
Yoshimoto 1, 1 Tokyo Inst. of Technol., 2 Taiyo
Yuden and 3 Kanagawa Industrial Technol. Ctr.,
Japan

K. Andersen, J. Castillo-León, T. Bakmand and
W.E. Svendsen, Technical Univ. of Denmark,Denmark

Impact of Oxide Thinning on Resistance
Switching Behavior of RF Sputtered SiOx
Dielectric Sandwiching with Pt Electrodes
A. Ohta 1, Y. Goto 1, S. Nishigaki 1, H.
Murakami 1, S. Higashi 1 and S. Miyazaki 2,
1 Hiroshima Univ. and 2 Nagoya Univ., Japan

Nanomaterialls
27P-11-68
Preparation of Fower-shaped Silver
Nanomaterials via Pulsed Proton Beam
Irradiation

Y.-J. Kim 1 and J.H. Song 2, 1 Chungnam Natl.
Univ. and 2 Sunchon Natl. Univ., Korea

B.G. Park, Y.S. No, S.Y. Kim and T.W. Kim,
Hanyang Univ., Korea-15-

A. Lee, J.H. Kim, H.H. Yoon and S.J. Park,
Kyungwon Univ., Korea

27P-11-71
Room Temperature Ferromagnetism in
Nanocrystalline ZnO (core)/Crystalline
Carbon (shell) systhensied by Thermal
Decomposition Method

27P-11-72
Preparation and Characterization ofMagnetic Chitosan Nanoparticles and its
Encapsulation Efficiency for Fluorouracil

27P-11-73
Quantitative Analysis of Enrofloxacin using
Dye Doped Silica Nanoparticle

27P-11-74
MorphologicalObservationsofSize-controlled Squid Ink Particles on
Electrodes and Insulated Substrates

27P-11-75
Photocatalyst ZnO Nanocrystalline Thin
Films formed on Si Substrates

27P-11-76
Stability of a Nano-sized Formulation byusing Gamma-irradiation Technique underStress Test for Development ofAgro-formulation

M. Subramanian , M. Tanemura , T. Hihara
and Y. Hayashi , Nagoya Inst. , of Technol.,Japan

T. Matsuura 1, T. Kato 1, S. Todo 1, M. Horii 1,
K. Minato 2 and T. Ueno 2, 1 Hokkaido Univ.of
Edu. and 2 Hakodate Natl. College of Technol.,Japan

H.-C. Yang 1 and M.-H. Hon 2, 1 Kun Shan
Univ. and 2 Natl. Cheng Kung Univ., Taiwan

R. Kasahara 1, S. Harako 1, S. Komuro 2 and
X. Zhao 1, 1 Tokyo Univ. of Sci. and 2 Toyo
Univ., Japan

27P-11-77
The Study of Topotactic Transformationfrom Te Nanowires into Ag2Te with Single
Crystalline

27P-11-78
Transition of Nanoparticle Structures by
Evaporation of Solvent Mixture

27P-11-80
GrowthandCharacterizationofNano-structured Zinc Tungstate (ZnWO4)
preparedbyMicrowave-assisted
Synthesis

27P-11-81
Hydrothermal Synthesis of Silicon-based
Hollow Nanostructures

D. Jeong 1, Y.-I. Lee 1, J.-H. Lim 2, N.V. Myung3 and Y.-H. Choa 1, 1 Hanyang Univ., 2 Korea
Inst. of Materials Sci., Korea and 3 Univ. of
California-Riverside, USA

M.S. Kim , S. Lee and T. Lee , Yonsei Univ.,
Korea

S. Sonae, M. Ara and H. Tada, Osaka Univ.,
Japan

M.K. Tsai 1, Y.C. Lee 1, C.C. Huang 1, S.Y. Hu
2, J.W. Lee 3, B.Y. Hong 4, B.J. Chen 1 andK.K. Tiong 4, 1 Tungnan Univ., 2 Tung Fang
Design Univ., 3 Ming Chi Univ. of Technol. and 4
Natl. Taiwan Ocean Univ., Taiwan

27P-11-83
Preparation of Naturally-textured Al-doped
ZnO Films on Flexible Substrate with
Radio Frequency Magnetron Sputtering

J.-A. Ko, S.-J. Kim, J.-W. Ahn and H.-B. Lim,
Dankook Univ., Korea

H.-J. Park, J.-S. Choi, H.-J. Kim and D.H. Kim,
Korea Atomic Energy Res. Inst., Korea

27P-11-79
Characterization of ZnO Tetrapods
prepared by a Simple Oxidation of Zn
Plate in Air Atmosphere

D.-h. Bae and G.-H. Lee, Dong-eui Univ., Korea

27P-11-82
EffectofPotassium
Chloride
Concentration on the Structural and
Optical Properties of ZnO Nanorods
grown on Indium-tin-oxide Film Coated
Glass Substrates

H.Y. Yang, Y.S. No and T.W. Kim, Hanyang
Univ., Korea

27P-11-84
Influence of Annealing Temperature on theProperties of TiO2/ZnO NanocompositeFilmpreparedby
Simultaneous
RF-magnetron Sputtering

27P-11-85
EffectofInhomogeneous
StrainDistribution on the Thickness Modulationin GaAs/GaAsP Strained Superlattice

27P-11-86
Photoluminescence and X-ray Absorption
Fine Structure Analysis of Sm-doped TiO2
Thin Films

27P-11-87
Structural Characteristics of Zinc Oxide
Films treated in Ar/O2 Atmosphere using
Microwave Plasma Jet Sintering System

27P-11-88
Optical Properties of ZnO/MgO Multilayer
Films with Different Pairs grown by
Sputtering Technique27P-11-89
Effect of Oxygen Gas Flow Rate on theProperties ZnO:Ga Films deposited byFacing Target Sputtering System

27P-11-90
Fabrication of Al2O3/SiC Nanocomposite
using SiC Nanopowder synthesized by
Mechanical Alloying Method

M.K. Prosad, Y.B. Kim, J.H. Lee and B.H. Choi,
Korea Inst. of Industrial Technol., Korea

J. Sakurai 1, R. Kasahara 1, T. Ohtsuki 1, S.
Harako 1, S. Komuro 2, N. Hirao 3 and X. Zhao
1, 1 Tokyo Univ. of Sci., 2 Toyo Univ. and 3
JAEA, JapanK.-H. Lee, H.-W. Choi and K.H. Kim, Kyungwon
Univ., Korea

M.H. Abdullah, M.Z. Musa, L.N. Ismail, M.H.
Mamat and M. Rusop, Univ. Teknologi MARA,
Malaysia

C.H. Su and C.M. Huang, Natl. Taipei Univ. ofTechnol., Taiwan

S. Kangwantrakool,
Technol., Thailand

Suranaree

Univ.

X.G. Jin 1, H. Nakahara 1, K. Saitoh 1, T. Saka
2, T. Ujihara 1, N. Tanaka 1 and Y. Takeda 1,
Nagoya Univ. and 2 Daido Univ., Japan

Y.C. Lee 1, F.J. Cheng 1, M.K. Tsai 1, S.Y. Hu 2,
J.W. Lee 3, Z.K. Wun 4 and K.K. Tiong 4, 1
Tungnan Univ., 2 Tung Fang Design Univ., 3
Ming Chi Univ. of Technol. and 4 Natl. Taiwan
Ocean Univ., Taiwan

of

Nano Tool
27P-11-91
Nano-scale Force Studies of PSL Spheres
on a Si Subtract using Atomic ForceMicroscopy

S.P. Pan, W.E. Fu, H.C. Liou, T.C. Yu and C.L.
Wu, ITRI, Taiwan

27P-11-94
Three
Dimensional
Nano-micro
Processing for Polymer Films by MeV Ion
Beam Lithography

K. Takano 1, A. Asano 1, Y. Maeyoshi 1, H.
Marui 1, M. Omichi 1, A. Saeki 1, S. Seki 1, T.
Satoh 2, T. Kamiya 2, Y. Ishii 2, T. Ohkubo 2, M.
Koka 2, W. Kada 2, M. Sugimoto 2 and H.
Nishikawa 3, 1 Osaka Univ., 2 JAEA and 3
Shibaura Inst. of Technol., Japan

27P-11-92
Picosecond
SnapshotofSurface
Morphology by using Coherent Soft X-ray
PulsesT. Tomita 1, N. Hasegawa 2, K. Terakawa 3, M.
Yamamoto 1, Y. Minami 3, Y. Ochi 2, T. Kaihori
2, M. Nishikino 2, M. Yamagiwa 2, T. Kawachi 2
and T. Suemoto 3, 1 Univ. of Tokushima, 2 JAEA
and 3 Univ. of Tokyo, Japan

27P-11-95
Microchanneled Resonant Heat Sensor
for a Living Cell

M. Toda, T. Otake, N. Inomata and T. Ono,
Tohoku Univ., Japan

27P-11-93
Highly Sensitive Detection of Target
Biomolecules on a Cell Surface using
Metal Nano-particles conjugated with
Aptamer Probes

H. Kim 1, H. Terazono 1, M. Hayashi 1, H. Takei
1,2 and K. Yasuda 1,3, 1 Kanagawa Academyof Sci. & Technol., 2 Toyo Univ. and 3 Tokyo
Medical and Dental Univ., Japan

27P-11-96
The Application of Advanced TEM
Tomographyfor
3-dimensional
Microstructure Analysis in Nanomaterials
and Nanodevices
S.-C. Lo and M.-W. Lai, ITRI, Taiwan-16-

27P-11-97
Theoretical Study for Mechanical Controlof Micro- and Nano-mechanical Systems
by Cavity-induced Radiation Force

27P-11-98
Coupled Mechanical Si Resonators and its
Entrainment Condition
K. Tanno and T. Ono, Tohoku Univ., Japan

A. Yoshinaka 1, T. Arie 1,2 and S. Akita 1,2, 1
Osaka Pref. Univ. and 2 JST-CREST, Japan

27P-11-100
The Application of Tomography andElectrical Measurement in DB-FIB System
for Cathode Materials of Li-battery

27P-11-101
Planar-waveguideTransducer

27P-11-148L
Recognition of embedded Defects insuspended
NanowiresusingaCarbon-nanotube Cantilever Gat
Y.-W. Lan 1,2, L.-N. Nguyen 2,3, S.-J.
Lai 2, M.-C. Lin 2, C.-H. Kuan 1 andC.-D. Chen 2,4, 1 Natl. Taiwan Univ. 2
Academia Sinica, 3 Natl. Tsing Hua
Univ. and 4 Natl. Chen-Kung Univ.,
TaiwanN.D. Vy 1, R. Ooka 1 and T. Iida 1,2, 1 Osaka
Pref. Univ. and 2 JST-PRESTO, Japan

S.-C. Lo, M.-W. Lai and L.-J. Lin, ITRI, Taiwan

Based

OpticalM.-W. Lai, C.-S. Chu, S.-C. Lo, Y.-T. Li and Y.-C.
Pu, ITRI,Taiwan

27P-11-99
Oscillation of Cantilevered Multiwall
Carbon Nanotubes by Thermal Actuation

27P-11-149L Withdrawn

Controlling
Phase
Formationof
Co@Fe2O3
Heteroparticles
andCoFe2O4 Nanoparticles
B. Nakhjavan, M.N. Tahir, U. Kolb and W.
Tremel, Johannes Gutenberg-Universität,
Germany

Nanoimprint, Nanoprint and Rising Lithography
27P-11-102
Silica/UV-cured Resin Nanocomposites for
Replica Molds in UV Nanoimprinting

S. Kudo 1, C.M. Yun 1,2, K. Nagase 1, S. Kubo
1,2 and M. Nakagawa 1,2, 1 Tohoku Univ. and 2
JST-CREST, Japan

27P-11-103
Changes in Weight and Viscosity of
UV-curable Resins and Monomers byabsorbingaCondensable
Pentafluoropropane Gas Effective in UV
Nanoimprint

27P-11-104
Evaluation of Polymerization Degrees ofPatterns fabricated by UV-nanoimprint in
PFP Gas Ambient

27P-11-106
Evaluation of Interaction Force between
UV-nanoimprint Resin and Antisticking
Layer by Dynamic Contact Angle
Measurement

27P-11-107
Micro
ThermalImprinting
Powder-polymer Multilayer Substrate

S. Kaneko 1, K. Kobayashi 1, Y. Tsukidate 1,2,
H. Hiroshima 2,3, S. Matsui 2,4 and M.
Nakagawa 1,2, 1 Tohoku Univ., 2 JST-CREST, 3
AIST and 4 Univ. of Hyogo, Japan

27P-11-105
Evaluation of Fluorinated Self-assembled
Monolayers under Pentafluoropropane
Gas Ambient by Scanning Probe
Microscopy

M. Okada 1,4,5, M. Iwasa 2, Y. Haruyama 1,4,
H. Hiroshima 3,4 and S. Matsui 1,4, 1 Univ. of
Hyogo, 2 SII Nanotechnol., 3 AIST, 4
JST-CREST and 5 JSPS, Japan

M. Chinen 1,2, M. Okada 1,2,3, Y. Haruyama
1,2 and S. Matsui 1,2, 1 Univ. of Hyogo, 2
JST-CREST and 3 JSPS, Japan

27P-11-108
The Development of Electroformed Ni-W
Mold to Thermal Imprinting for Borosilicate
Glass

27P-11-109
Change in Young's Modulus of Imprinted
Nanopillar after Residual Layer Removal
by Reactive Ion Etching

M. Yasui 1, S. Kaneko 1, M. Takahashi 2, Y.
Hirabayashi 1, T. Ozawa 1 and R. Maeda 2, 1
Kanagawa Industrial Technol. Ctr. and 2 AIST,Japan

27P-11-111
Fabrications of Various Al Doped ZnO
Nano-patterns delived by Sol-gel Method
and Direct Nano-imprint Lithography
J.S. Kim, K.-J. Byeon, J.-Y. Cho, S.-C. Oh and
H. Lee, Korea Univ., Korea

Y. Kang 1,2,3, Y. Nakai 1,2, M. Okada 1,2,3, Y.
Haruyama 1,2 and S. Matsui 1,2, 1 Univ. of
Hyogo, 2 JST-CREST and 3 JSPS, Japan

27P-11-112
Transfer Printing Method to
Polarized Light Emission in OLED

obtainH.Y. Noh 1, C.-S. Park 1, J.-S. Park 1, M.-K.
Park 1, J.-W. Kim 2, T.-H. Yoon 2, S.-W. Kang 1
and H.-R. Kim 1, 1 Kyungpook Natl. Univ. and 2
Pusan Natl. Univ., Korea

Y. Sawada 1,6, M. Okada 1,6,7, H. Miyake 2, T.
Ohsaki 3, Y. Haruyama 1,6, Y. Hirai 4,6, H.
Hiroshima 5,6 and S. Matsui 1,6, 1 Univ. of
Hyogo, 2 Daicel Chemical Industries, 3 Toyo
Gosei, 4 Osaka Pref. Univ., 5 AIST, 6
JST-CREST and 7 JSPS, Japanon

Y. Xu, F. Tsumori, K. Hatama, H. Kang and H.
Miura, Kyushu Univ., Japan

27P-11-110
Comparison of Surface Characterization ofAntisticking Layer formed by CVD and
Dip-coat Methods for Nanoimprint
Lithography

D. Yamashita 1,2, M. Okada 1,2,3, Y. Nakai 1,2,
Y. Haruyama 1,2 and S. Matsui 1,2, 1 Univ. of
Hyogo, 2 JST-CREST and 3 JSPS, Japan

27P-11-113
Biomimetic Nanostructured Broadband
Antireflection Coating and its Application
on Crystalline Solar Cells
J.Y. Chen and K.W. Sun, Natl. Chiao Tung Univ.,
Taiwan27P-11-114
Imprinted
Pattern
Profile-dependent
Plasmonic and Optical Properties

J.-H. Choi, S.-J. Park, C.-H. Kim, J.-H. Lee,
D.-G. Choi, E.-S. Lee and J.-H. Jeong, Korea
Inst. of Machinery & Materials, Korea

BioMEMS, Lab on a Chip
27P-11-115
Investigation of Hot Roller Embossing tofabricate Serpentine Microfluidic Mixer
C.-W. Tsao and T.-Y. Chen, Natl. Ctrl. Univ.,
Taiwan27P-11-118
Measurement of Nonlinear Mechanical
Properties of Surfactant-added PDMS
(Polydimethylsiloxane)
H.T. Kim, S.B. Lee, C.K. Oh, D.K. Lee and O.C.
Jeong, INJE Univ., Korea

27P-11-116
HF-etched Glass Substrate for the Optical
Readout of Sol-gel Microarrays
J.-Y. Ahn 1, H.A. Kim 1, S.W. Lee 1, Y.H. Cho 2
and S. Kim 1, 1 Dongguk Univ. and 2 Seoul
Natl. Univ. of Technol., Korea

27P-11-119
Minimization of Artifacts in Electrical
Stimulation with Extracellular Potential
Measurement

T. Kaneko, F. Nomura and K. Yasuda, Tokyo
Medical & Dental Univ., Japan-17-

27P-11-117
Fabricationof
MiniaturizedHigh
Frequency Quartz Crystal Microbalanceusing Wet Etching Process

J. Liang 1, X. Li 2, H. Li 1 and T. Ueda 2, 1
Southeast Univ. and 2 Waseda Univ., Japan

27P-11-120
Imaging Optical System expanded Depth
of Field for Direct Observation of Cells in
Microfluidics
A. Hattori 1, M. Hayashi 2 and K. Yasuda 1,2, 1
Tokyo Medical & Dental Univ. and 2 Kanagawa
Academy of Sci. & Technol., Japan

27P-11-121
ComparisonofMicromanipulation
Systems using Electrophoresis andDielectrophoresis by the Upper Limit ofTraveling Rate of Microparticles or Cells in
Various Solutions

M. Hayashi 1, H. Kim 1, H. Terazono 1, A.
Hattori 2 and K. Yasuda 1,2, 1 Kanagawa
Academy of Sci. & Technol. 2 Tokyo Medical &Dental Univ., Japan

27P-11-122
Development of a Constitutive Cell-chip
Measurement
with
Human
Cardiomyocytes by using on-chip Cell
Multi Electrode Assay

T. Hamada, F. Nomura, T. Kaneko and K.
Yasuda, Tokyo Medical & Dental Univ., Japan

Microsystem Technology and MEMS
27P-11-123
Fabrication of High Frequency Probe Chipby CMOS-MEMS and EN/IG Processes

27P-11-124
Micro-optical Pickup based on Ultra
Precision Machining Optical Film

27P-11-125 to 26P-7-148
Fabrication of BeCu Probe Array using
Heating and Fusing Current

27P-11-126 to 26P-7-149
Vertical Direction MEMS Probe Card

27P-11-127
The Interference Effect of Rayleigh Waveand Intersecting Shear-horizontal Wave

27P-11-128
Development of the Thermal-actuators
fabricated by FIB-CVD

27P-11-130
Fabrication of Nickel Micro-lens Dies using
Precise Hemispherical Resist Molds

27P-11-131
Implementation of a CMOS
Lorentz Force Actuator for
Scanning Stage

K.-Y. Lee, J.-T. Huang, G.-T. Jheng, H.-J. Hsu,
C.-K. Chen and T.-C. Tsai, Natl. Taipei Univ. ofTechnol., Taiwan

B. Kim 1, B. Lee 2, H.C. Kim 3 and K. Chun 4, 1
Catholic Univ. of Daegu, 2 Korea Univ. ofTechnol. & Edu. 3 Univ. of Ulsan and 4 Seoul
Natl. Univ., Korea

27P-11-129
Luminescent Solar Concentrator for Flat
Panel Display

C.-H. Yeh 1, F.-Y. Chang 2, T.-Y. Hsieh 3 and
H.-T. Young 1, 1 Natl. Taiwan Univ., 2 Natl.
Taiwan Univ. of Sci. & Technol. and 3 Wintek,
Taiwan27P-11-132
LIGA-like Vertical Contact Probe

H.-J. Hsu 1,2, S.-J. Wang 1, K.-Y. Lee 1,2, Y.-C.
Wang 1, C.-C. Lan 1, M.-C. Chung 1 and J.-T.
Huang 1,2, 1 C.C.P.Contact Probes and 2 Natl.
Taipei Univ. of Technol., Taiwan

J.-H. Hsu 1, C.-H. Lee 2 and R. Chen 1, 1 Natl.
Tsing Hua Univ. and 2 Feng Chia Univ., Taiwan

H. Oh, K. Lee, H. Lee, K. Lee and S.S. Yang,
Ajou Univ., Korea

H. Ono and T. Horiuchi, Tokyo Denki Univ.,
Japan

27P-11-133
Low-cost MEMS Fabrication based on
Trench Integrated Cavity Wafer

D. Lee 1, S. Kim 1, D. Kong 1, C. Cho 1, B. Kim
2, J. Lee 1 and O.-H. Kwon 1, 1 Kyungpook
Natl. Univ. and 2 Catholic Univ. of Daegu, Korea

Y. Nakai 1, Y. Kang 1, M. Okada 1,2, Y.
Haruyama 1 and S. Matsui 1, 1 Univ. of Hyogo
and 2 JSPS, Japan

MEMS
Optical

C.M. Sun 1, C.L. Wu 2, C. Wang 1 and W. Fang
1, 1 Natl. Tsing Hua Univ. and 2 ITRI, Taiwan

27P-11-134
Nanoporous Gold as Low Temperature
Bonding Intermediate

G. Zhao, T. Kobayashi, J. Lu, H. Takagi, Y.
Zhang, T. Itoh and R. Maeda, AIST, Japan

W.-S. Wang 1, Y.-C. Lin 1, L.Y. Chen 1, M.W.
Chen 1, T. Gessner 1,2,3 and M. Esashi 1, 1
Tohoku Univ., Japan, 2 Fraunhofer ENAS and 3
Chemnitz Univ. of Technol., Germany

27P-11-135
Effects of Specimen Dimensions on
Adhesive Shear Strength between
Micro-sized SU-8 Columns and Si
Substrate

27P-11-136 Withdrawn
Observation of Magnetization Process in
GaMnAs using a Mechanical Cantilever

27P-11-137
Design of a GaAs-based Air-slot Photonic
Crystal Nanocavity for OptomechanicalOscillators

27P-11-138
Optimal Size Determination of Electrodesfor High Frequency Fundamental AT-cut
Quartz Resonator using 3-D FEM

27P-11-139
Vibration Analysis of Original Shape
Quartz Resonator for High Q Realization

K. Onomitsu, I. Mahboob, H. Okamoto and H.
Yamaguchi, NTT, Japan

C. Ishiyama, T. Tasaki, T.-F.M. Chang and M.
Sone, Tokyo Inst. of Technol., JapanJ. Ji, H. Ohigawa, H. Chen, M. Zhao and T.
Ueda, Waseda Univ., Japan

27P-11-151L
Lamé-Mode
Octagonal
Resonator Utilizing Sliding
Electrodes

H. Oigawa, Y. Kirino, H. Chen, J. Ji and T. Ueda,
Waseda Univ., Japan

MEMS
Driving

T. Okamoto 1, H. Tanigawa 2 and K. Suzuki
1, 1 Ritsumeikan Univ, Japan-18-

M. Nomura and K. Hirakawa, Univ. of Tokyo,
Japan

27P-11-150L
Crystal Grain Positioning of Organic
Semiconductor Film Using Electrostatic
InkjetY. Ishida 1 and T. Asano 2, 1 Yasukawa
Electric and 2 Kyushu Univ., Japan