PMEG060V050EPE-Q

60 V, 5 A low VF Schottky barrier rectifier
15 July 2024

Product data sheet

1. General description
Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat
lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits••••

Very low forward voltage
High power capability due to clip-bonding technology
Small and thin SMD plastic package
Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications
•
•
•
•
•
•

High efficiency DC-to-DC conversion
Low voltage rectification
Switch mode power supply
Freewheeling application
Reverse polarity protection
OR-ing4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

IF(AV)

average forward
currentδ = 0.5; f = 20 kHz; square wave; Tsp ≤174 °C

-

-

5

A

VR

reverse voltage

Tj = 25 °C

-

-

60

V

VF

forward voltage

IF = 5 A; pulsed; Tj = 25 °C

[1]

-

480

560

mV

IR

reverse current

VR = 60 V; pulsed; Tj = 25 °C

[1]

-

100

400

µA

[1]

Very short pulse, in order to maintain a stable junction temperature.

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription
1

A

anode

2

A

anode

3

K

cathodeSimplified outline

Graphic symbol

1
3
2

CFP15B (SOT1289B)

K

A
A
aaa-009063

PMEG060V050EPE-Q

Nexperia

60 V, 5 A low VF Schottky barrier rectifier

6. Ordering information
Table 3. Ordering information
Type number
Package
PMEG060V050EPE-Q

Name

Description

Version

CFP15B

plastic, thermal enhanced ultra thin SMD package; 3 leads; SOT1289B
2.13 mm pitch; 5.8 x 4.3 x 0.95 mm body

7. Marking
Table 4. Marking codes
Type number

Marking code

PMEG060V050EPE-Q

060V
050E

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VR

reverse voltage

Tj = 25 °C

-

60

V

IF

forward current

δ = 1; Tsp ≤ 173 °C

-

7

A

IF(AV)

average forward current

δ = 0.5; f = 20 kHz; square wave; Tsp ≤174 °C

-

5

A

IFSM

non-repetitive peak
forward current

half sine-wave pulse; tp = 8.3 ms;
Tj(init) = 25 °C

-

160

A

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

1.66

W

[2]

-

2.15

W

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

[1]
[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .

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60 V, 5 A low VF Schottky barrier rectifier

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-a)Rth(j-sp)
[1]
[2]
[3]
[4]

Conditions

Min

Typ

Max

Unit

thermal resistance from in free air
junction to ambient[1] [2]

-

-

90

K/W

[1] [3]

-

-

70

K/W

thermal resistance fromjunction to solder point

[4]

-

-

3

K/W

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are asignificant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
aaa-034741

103
Zth(j-a)(K/W)

102 duty cycle = 1
0.75
0.50
0.33
0.25
0.20
10 0.10
0.05
1

0.02

0.01

10-1

10-2
10-5

0
10-4

10-3

10-2

10-1

1

10

102

tp (s)

103

FR4 PCB, standard footprint
Fig. 1.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-034742

103
Zth(j-a)(K/W)
102 duty cycle = 1

10

0.50
0.25
0.10

1 0.02

0.75
0.33
0.20
0.05
0.01

10-1

10-2
10-5

0
10-4

10-3

10-2

FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.

10-1

1

10

102

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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60 V, 5 A low VF Schottky barrier rectifier

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

V(BR)R

reverse breakdown
voltage

IR = 5 mA; pulsed; Tj = 25 °C

VF

forward voltage

Min

Typ

Max

Unit

[1]

60

-

-

V

IF = 1 A; pulsed; Tj = 25 °C

[1]

-

350

400

mV

IF = 5 A; pulsed; Tj = 25 °C

[1]

-

480

560

mV

IF = 5 A; pulsed; Tj = -40 °C

[1]

-

530

620

mV

IF = 5 A; pulsed; Tj = 125 °C

[1]

-

445

540

mV

[1]

-

100

400

µA

IR

reverse current

VR = 60 V; pulsed; Tj = 25 °C

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tj = 25 °C

-

429

-

pF

VR = 10 V; f = 1 MHz; Tj = 25 °C

-

148

-

pF

reverse recovery time
step recovery

IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C

-

14

-

ns

reverse recovery time
ramp recovery

dIF/dt = 100 A/µs; IF = 3 A; VR = 30 V;
Tj = 25 °C

-

12

-

ns

peak forward recovery
voltage

IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C

-

340

-

mV

trr

VFRM
[1]

Very short pulse, in order to maintain a stable junction temperature.
aaa-015003

102

IR
(A)

IF
(A)
10

10-1

(1)
(2)

10-2

(1)

(3)
(4)
(5)

10-3

(2)
(3)

10-4

(4)

1

aaa-034743

1

10-5
(5)

10-1

(6)

(6)

10-6

(7)

10-7
10-8

10-2

0

0.3

0.6

VF (V)

10-9

0.9

pulsed condition(1) Tj = 175 °C(2) Tj = 150 °C(3) Tj = 125 °C(4) Tj = 100 °C(5) Tj = 85 °C(6) Tj = 25 °C(7) Tj = −40 °C
Fig. 3.

Product data sheet

0

20

40

VR (V)

60

pulsed condition(1) Tj = 175 °C(2) Tj = 150 °C(3) Tj = 125 °C(4) Tj = 100 °C(5) Tj = 85 °C(6) Tj = 25 °C(7) Tj = −40 °C

Forward current as a function of forward
voltage; typical values

PMEG060V050EPE-Q(7)

Fig. 4.

Reverse current as a function of reverse
voltage; typical values

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60 V, 5 A low VF Schottky barrier rectifier
aaa-034744

800
Cd
(pF)

aaa-015006

4(5)

PF(AV)
(W)

600

(4)
(3)

3
(2)

400

2

200

1

0

0

20

40

0

60

VR (V)

Diode capacitance as a function of reverse
voltage; typical values

Fig. 6.

aaa-034745

0.7
P R(AV)
(W)
0.6

0

2

4

6

IF(AV) (A)8

Tj = 100 °C(1) δ = 0.1(2) δ = 0.2(3) δ = 0.5(4) δ = 0.8(5) δ = 1

f = 1 MHz; Tamb = 25 °C
Fig. 5.

(1)

Average forward power dissipation as afunction of average forward current; typicalvaluesaaa-034746

5
IF(AV)
(A)

(1)

4

0.5

(1)
(2)

(2)

3

(3)

0.4
0.3

(3)
(4)

2

(4)

0.2
1
0.1
0

(5)

0

20

40

VR (V)

060

Tj = 100 °C(1) δ = 1
(2) δ = 0.9(3) δ = 0.8(4) δ = 0.5(5) δ = 0.2
Fig. 7.

Product data sheet

50

100

150
200
T amb (°C)

FR4 PCB, standard footprint
Tj = 175 °C(1) δ = 1; DC(2) δ = 0.5; f = 20 kHz(3) δ = 0.2; f = 20 kHz(4) δ = 0.1; f = 20 kHz

Average reverse power dissipation as afunction of reverse voltage; typical values

PMEG060V050EPE-Q

0Fig. 8.

Average forward current as a function ofambient temperature; typical values

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60 V, 5 A low VF Schottky barrier rectifier

IF(AV)(A)

aaa-034747

7
(1)

6
5

aaa-034748

7.5

(1)

IF(AV)
(A)

(2)

(2)

5.0

4
(3)

3

(3)

2.5

(4)

2

(4)

1
0

0

50

100

0

150
200
T amb (°C)
2

FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C(1) δ = 1; DC(2) δ = 0.5; f = 20 kHz(3) δ = 0.2; f = 20 kHz(4) δ = 0.1; f = 20 kHz
Fig. 9.

0

50

100

150

Tsp (°C)

200

Tj = 175 °C(1) δ = 1; DC(2) δ = 0.5; f = 20 kHz(3) δ = 0.2; f = 20 kHz(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of solder
point temperature; typical values

Average forward current as a function ofambient temperature; typical values

11. Test informationIF
IR(meas)
time

IR

trr

006aad022

Fig. 11. Reverse recovery definition; step recovery

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60 V, 5 A low VF Schottky barrier rectifier
IF

dlF
dt

trr

time
25 %
100 %

Qrr

IR

IRM
003aac562

Fig. 12. Reverse recovery definition; ramp recovery
IF

time
VF

VFRM
VF
time
001aab912

Fig. 13. Forward recovery definitionP

t2

duty cycle δ =

t1
t2

t1

t

006aaa812

Fig. 14. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV)=IM×δ with IM defined as peak current
IRMS=IF(AV) at DC, and IRMS=IM×√δwith IRMS defined as RMS current.

Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

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60 V, 5 A low VF Schottky barrier rectifier

12. Package outline

0.6
0.4

4.4
4.2
2.13

1.3
1.1
2

0.99
0.91
1

1.44
1.04

5.9
5.7

4.2
4.96 3.8
4.56
3
2.15
1.95
Dimensions in mm

0.6
0.4
3.5
3.1

6.9
6.7

0.24
0.16
19-01-10

Fig. 15. Package outline CFP15B (SOT1289B)

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60 V, 5 A low VF Schottky barrier rectifier

13. Soldering
Footprint information for reflow soldering of CFP15B package

SOT1289B

4.60
0.33

1.80

0.53

1.60
0.90

2.13

1.54 1.34

0.90

0.80 1.00

0.30

0.80

0.40

2.93

0.40
0.80
7.70

0.40
1.17
5.06 4.86

0.40
0.75

0.11

1.00

1.80
3.80
4.00

recommended stencil thickness: 0.125 mm
occupied area

solder resist

solder landsolder paste

Dimensions in mm
Issue date23-03-02

sot1289b_fr

Fig. 16. Reflow soldering footprint for CFP15B (SOT1289B)

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60 V, 5 A low VF Schottky barrier rectifier

14. Revision history
Table 8. Revision history
Data sheet ID

Release date

Data sheet status

ChangenoticeSupersedes

PMEG060V050EPE-Q v.2

20240715

Product data sheet-

PMEG060V050EPE-Q v.1

Modifications:•

PMEG060V050EPE-Q v.1

20220719

PMEG060V050EPE-Q

Product data sheet

Reflow soldering footprint: Stencil design for solder paste printing changed.
Product data sheet-

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60 V, 5 A low VF Schottky barrier rectifier
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15. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

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This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
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60 V, 5 A low VF Schottky barrier rectifier

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Test information.......................................................... 6
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11© Nexperia B.V. 2024. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 15 July 2024

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