PEMB17; PUMB17
PNP/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 1 September 2009

Product data sheet

1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors
Table 1.

Product overview

Type numberPackage
NXP

JEITA

NPN/PNP
complement

NPN/NPN
complement

PEMB17

SOT666-

PEMD17

PEMH17

PUMB17

SOT363

SC-88

PUMD17

PUMH17

1.2 Features
nnnn

Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost

1.3 Applicationsn Low current peripheral drivern Control of IC inputs
n Replacement of general-purpose transistors in digital applications

1.4 Quick reference data
Table 2.

Quick reference data

SymbolParameterConditions

VCEO

collector-emitter voltage

open base

IO

output current (DC)R1

bias resistor 1 (input)

R2/R1

bias resistor ratio

MinTypMax

Unit--−50V--−100mA

334761kΩ

0.37

0.47

0.57

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

2. Pinning information
Table 3.

Pinning

PinDescription

Simplified outline1GND (emitter) TR1

2input (base) TR1

3output (collector) TR2

4

GND (emitter) TR2

5input (base) TR2

6output (collector) TR1

654Symbol
654

R1R2TR2

123TR1R1

R2001aab555

123006aaa212

3. Ordering information
Table 4.

Ordering information

Type number

Package
Name

Description

Version

PEMB17-plastic surface mounted package; 6 leads

SOT666

PUMB17SC-88

plastic surface mounted package; 6 leads

SOT3634. Marking
Table 5.

Marking codes

Type number

Marking code[1]PEMB175M

PUMB17B*8[1]* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia* = W: made in China

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 2009

2 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMaxUnitPer transistor
VCBO

collector-base voltage

open emitter-−50V

VCEOcollector-emitter voltage

open base-−50VVEBO

emitter-base voltage

open collector-−10VVI

input voltage
positive-+10V

negative-−40VIO

output current (DC)-−100mAICM

peak collector current-−100mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT363

[1]

-

200mW

SOT666[1] [2]-200mW−65+150°C

Tstg

storage temperature

Tjjunction temperature-150°C

Tambambient temperature−65+150°C

Per device
total power dissipation

Ptot

Tamb ≤ 25 °C

SOT363[1]-300mW

SOT666[1] [2]-300mW[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

6. Thermal characteristics
Table 7.
SymbolThermal characteristics
Parameter

Conditions

Min

TypMaxUnit

Per transistor
Rth(j-a)thermal resistance fromjunction to ambient

Tamb ≤ 25 °C

SOT363

[1]--

625

K/W

SOT666[1] [2]--

625

K/W

SOT363

[1]--

416

K/W

SOT666[1] [2]--

416

K/W

Per device
Rth(j-a)thermal resistance fromjunction to ambient

Tamb ≤ 25 °C[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 2009

3 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
SymbolParameterConditions

MinTypMaxUnitPer transistor
ICBO

collector-base cut-off
current

VCB = −50 V; IE = 0 A--−100nAICEO

collector-emitter
cut-off current

VCE = −30 V; IB = 0 A--−1µA

VCE = −30 V; IB = 0 A;
Tj = 150 °C--−50µAµA

IEBO

emitter-base cut-offcurrent

VEB = −5 V; IC = 0 A--−110hFE

DC current gain

VCE = −5 V; IC = −5 mA

60--VCEsat

collector-emittersaturation voltage

IC = −10 mA; IB = −0.5 mA--−150mV

VI(off)off-state input voltage

VCE = −5 V; IC = −100 µA-−1.7−1.2VVI(on)on-state input voltage

VCE = −0.3 V; IC = −2 mA−4−2.7-VR1bias resistor 1 (input)

3347

61kΩ

R2/R1bias resistor ratio

0.37

0.47

0.57

Cccollector capacitance--3

VCB = −10 V; IE = ie = 0 A;
f = 1 MHzPEMB17_PUMB17_3

Product data sheet

pF© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 2009

4 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

006aaa208

103006aaa209−102hFE(1)

102(2)

VCEsat
(mV)

(1)
(2)

(3)

(3)

10

1−10−1−1−10−102−10−10−1−1−10IC (mA)

VCE = −5 V

IC/IB = 20

(1) Tamb = 100 °C(1) Tamb = 100 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = −40 °C(3) Tamb = −40 °C

Fig 1.

−102
IC (mA)DC current gain as a function of collector
current; typical values
006aaa210−102VI(on)(V)

Fig 2.

Collector-emitter saturation voltage as afunction of collector current; typical values
006aaa211−10VI(off)(V)−10(1)

(1)

(2)
(2)
(3)

(3)

−1−1−10−1−10−1−1−10−102−10−1−10−2−10−1

IC (mA)

VCE = −0.3 V

VCE = −5 V
(1) Tamb = −40 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = 100 °C(3) Tamb = 100 °C

On-state input voltage as a function ofcollector current; typical values

Fig 4.

Off-state input voltage as a function ofcollector current; typical values

PEMB17_PUMB17_3

Product data sheet−10IC (mA)

(1) Tamb = −40 °C

Fig 3.

−1© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 2009

5 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

8. Package outline
Plastic surface-mounted package; 6 leads

SOT363

DE

ByX

AHE

65v M A4Q

pin 1index

AA1

12e1

3bpc
Lpw M B

edetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

A1maxbpcDEee1HE

LpQv

w

ymm

1.1
0.8

0.1

0.30
0.20

0.25
0.10

2.2
1.8

1.35
1.15

1.3

0.65

2.2
2.0

0.45
0.15

0.25
0.15

0.2

0.2

0.1

OUTLINE
VERSION

REFERENCES
IEC

JEDEC

SOT363

Fig 5.

JEITA
SC-88

EUROPEAN
PROJECTION

ISSUE DATE
04-11-08
06-03-16

Package outline SOT363 (SC-88)

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 2009

6 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

Plastic surface-mounted package; 6 leads

SOT666DEAX

Y SSHE654

pin 1 index
A12e1

bpc3w M A

Lpedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

bpc

DEee1

HE

Lpw

ymm

0.6
0.5

0.27
0.17

0.18
0.08

1.7
1.5

1.3
1.1

1.0

0.5

1.7
1.5

0.3
0.1

0.1

0.1

OUTLINE
VERSION

REFERENCES
IEC

JEDEC

JEITA

ISSUE DATE
04-11-08
06-03-16

SOT666

Fig 6.

EUROPEAN
PROJECTION

Package outline SOT666

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 2009

7 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]Type number

Package

Description

Packing quantity
3000

4000

10000

PEMB17SOT666

4 mm pitch, 8 mm tape and reel;--115-

PUMB17SOT363

4 mm pitch, 8 mm tape and reel; T1[2]-115--135PUMB17

SOT3634 mm pitch, 8 mm tape and reel; T2[3]-125--165[1]

For further information and the availability of packing methods, see Section 12.

[2]

T1: normal taping[3]

T2: reverse taping

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 20098 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

10. Revision history
Table 10.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PEMB17_PUMB17_3

20090901

Product data sheet-

PEMB17_PUMB17_2

Modifications:• This data sheet was changed to reflect the new company name NXP Semiconductors,including new legal definitions and disclaimers. No changes were made to the technicalcontent.

• Figure 5 “Package outline SOT363 (SC-88)”: updated• Figure 6 “Package outline SOT666”: updated
PEMB17_PUMB17_2

20050203

Product data sheet-

PUMB17_1

PUMB17_1

20031103

Product specification--

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 20099 of 11PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

11. Legal information
11.1 Data sheet status
Document status[1][2]Product status[3]Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

Preliminary [short] data sheet

Qualification

This document contains data from the preliminary specification.

Product [short] data sheet

Production

This document contains the product specification.

[1]

Please consult the most recently issued document before initiating or completing a design.

[2]

The term ‘short data sheet’ is explained in section “Definitions”.

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences ofuse of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

11.3 Disclaimers
General — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.
Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use ofNXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from national authorities.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PEMB17_PUMB17_3

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 03 — 1 September 200910 of 11

PEMB17; PUMB17

NXP Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
1213

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 8Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 September 2009
Document identifier: PEMB17_PUMB17_3