➨㻡㻥ᅇ䝣䝷䞊䝺䞁䞉䝘䝜䝏䝳䞊䝤䞉䜾䝷䝣䜵䞁⥲ྜ䝅䞁䝫䝆䜴䝮
7KHWK)XOOHUHQHV1DQRWXEHV*UDSKHQH*HQHUDO6\PSRVLXPㅮ₇せ᪨㞟$EVWUDFWV㻞㻜㻞㻜ᖺ㻥᭶㻝㻢᪥䠄Ỉ䠅 䡚 㻝㻤᪥䠄㔠䠅䜸䞁䝷䜲䞁㛤ദ
2QOLQH9LUWXDO6\PSRVLXP୺ദ 䝣䝷䞊䝺䞁䞉䝘䝜䝏䝳䞊䝤䞉䜾䝷䝣䜵䞁Ꮫ఍
7KH)XOOHUHQHV1DQRWXEHV DQG*UDSKHQH 5HVHDUFK 6RFLHW\
ඹദ
᪥ᮏ໬Ꮫ఍

7KH&KHPLFDO6RFLHW\RI-DSDQ༠㈶᪥ᮏ≀⌮Ꮫ఍
ᛂ⏝≀⌮Ꮫ఍
㧗ศᏊᏛ఍㟁Ẽ໬Ꮫ఍

7KH3K\VLFDO6RFLHW\RI-DSDQ
7KH-DSDQ6RFLHW\RI$SSOLHG3K\VLFV
7KH6RFLHW\RI3RO\PHU6FLHQFH-DSDQ
7KH(OHFWURFKHPLFDO6RFLHW\RI-DSDQ*UDSKHQH/D\HUHGPDWHULDO*URZWK(TXLSPHQW
Two-Stage Clean Thermal CVD

Stable Evaporation Source for MBE

Two-stage Substrate transfer System.
1) From inside the furnace to outside2) From inside the tube to outside

Hot lip evaporation source with
Original Special orifice for High
Vapor pressure materials.

Cold Wall type MOCVDHigh Frequency Induction CVD

MOCVD equipment with a maximum1500Υ
Υ heating mechanism andReaction materials introduction
mechanism.

High frequency induction heating
can heat the sample mounted on theΥ.
susceptor up to 2000Υ

Kenix

2-15-501,Houjyoguchi,Himeji,Hyogo,670-0935 JAPANTEL:079-283-3150 FAX: 079-280-3002
E-mail:kenix@leto.eonet.ne.jp URL:http://kenix.jp/

Abstract of
The 59 Fullerenes-Nanotubes-Graphene General Symposiumth㸦Online Virtual Symposium㸧
Sponsored by : The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by : The Chemical Society of JapanSupported by : The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan
Date : September 16th (Wed.) – September 18th (Fri.), 2020
Presentation Time : Special Lecture (25 min presentation + 5min discussion)     Award Nominee Lecture (10 min presentation + 10min discussion)
General Lecture (10 min presentation + 5min discussion)
Poster Preview (1 min presentation without discussion)

Executive Committee : Global Innovation Center,

Kyushu University, Chikushi Campus, Fukuoka➨ 59 ᅇࣇ࣮ࣛࣞࣥ㺃ࢼࣀࢳ࣮ࣗࣈ㺃ࢢࣛࣇ࢙ࣥ⥲ྜࢩ࣏ࣥࢪ࣒࢘
ㅮ₇せ᪨㞟㸦࢜ࣥࣛ࢖ࣥ㛤ദ㸧୺ദ : ࣇ࣮ࣛࣞࣥ㺃ࢼࣀࢳ࣮ࣗࣈ㺃ࢢࣛࣇ࢙ࣥᏛ఍
ඹദ : ᪥ᮏ໬Ꮫ఍
༠㈶ : ᪥ᮏ≀⌮Ꮫ఍ࠊᛂ⏝≀⌮Ꮫ఍ࠊ㧗ศᏊᏛ఍ࠊ㟁Ẽ໬Ꮫ఍᪥᫬ : ௧࿴ 2 ᖺ 9 ᭶ 16 ᪥ Ỉ 㹼9 ᭶ 18 ᪥ 㔠Ⓨ⾲᫬㛫 : ≉ูㅮ₇   㸦Ⓨ⾲  ศ㉁␲ᛂ⟅  ศ㸧     ཷ㈹ᑐ㇟⪅ㅮ₇㸦Ⓨ⾲  ศ㉁␲ᛂ⟅  ศ㸧୍⯡ㅮ₇   㸦Ⓨ⾲  ศ㉁␲ᛂ⟅  ศ㸧࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ㸦Ⓨ⾲ ศ࣭㉁␲ᛂ⟅ ࡞ࡋ㸧ᐇ⾜ጤဨ఍ 㸸 ஑ᕞ኱Ꮫ ⟃⣸࢟ࣕࣥࣃࢫ ࢢ࣮ࣟࣂࣝ࢖ࣀ࣮࣋ࢩࣙࣥࢭࣥࢱ࣮  䚷䚷ᒎ♧ᅋయᚚⰾྡ䚷㻔஬༑㡢㡰䚸䚷ᩗ⛠␎䠅㼟㼍㼚㼠㼑㼏㻌㻔ᰴ䠅䝔䝺䝎䜲䞁䞉䝆䝱䝟䞁䠄ᰴ䠅䠄ᰴ䠅᪥ᮏ䝺䞊䝄䞊䚷䚷䚷䚷ᗈ࿌ᥖ㍕ᅋయᚚⰾྡ䚷㻔஬༑㡢㡰䚸䚷ᩗ⛠␎䠅䜿䝙䝑䜽䝇㻔ᰴ㻕ᱜᮌ⌮໬ᏛᶵᲔ㻔ᰴ㻕㻔ᰴ䠅䝉䞁䝖䝷䝹⛉Ꮫ㈠᫆

䝔䝺䝎䜲䞁䞉䝆䝱䝟䞁䠄ᰴ䠅᪥ᮏ㟁Ꮚ䠄ᰴ䠅㻔ᰴ䠅᪥ᮏ䝺䞊䝄䞊

Contents
Time Table ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ i
Chairperson ・࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭iii
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・Program   Japanese
Japanese・ ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ iv
EnglishEnglish ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭xvi・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・Abstracts
Special Lecture ・࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ 1
General Lecture・ ・࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ 11
Poster Preview ・࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ 47
Author Index・ ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 127

┠ḟ
┠ḟ
┠ḟ
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ i᪩ぢ⾲ ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ᗙ㛗୍ぴ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭iii
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ iv
ࣉࣟࢢ࣒ࣛ ࿴ᩥ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭ⱥᩥ ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭xvi・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 1
ㅮ₇ண✏  ≉ูㅮ₇࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
୍⯡ㅮ₇࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭11・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・࣏ࢫࢱ࣮Ⓨ⾲࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭47
・ ・ ・ ・ ・ ・ ・ ・ ・ ・Ⓨ⾲⣴ᘬ࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭࣭
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 127䚷䝥䝻䜾䝷䝮᪩ぢ⾲㻌䠄䜸䞁䝷䜲䞁㛤ദ䠅䚷䝥䝻䜾䝷䝮᪩ぢ⾲㻌䠄䜸䞁䝷䜲䞁㛤ദ䠅䚷䝥䝻䜾䝷䝮᪩ぢ⾲㻌䠄䜸䞁䝷䜲䞁㛤ദ䠅䚷䠕᭶䠍䠒᪥䚷䠄Ỉ䠅
㻥㻦㻝㻜
㻥㻦㻝㻡
㻥㻦㻠㻡
㻝㻜㻦㻟㻜
㻝㻜㻦㻠㻡
㻝㻝㻦㻟㻜
㻝㻞㻦㻝㻡

᥋⥆㛤ጞ䚷㻤㻦㻠㻜㻙㻥㻦㻝㻜㛤఍ᣵᣜ≉ูㅮ₇䚷䠄୸ᒣ㻌ⱱኵ䠅㻥㻦㻝㻡㻙㻥㻦㻠㻡୍⯡ㅮ₇䚷㻟௳䠄䝘䝜䝏䝳䞊䝤䛾≀ᛶ䠅㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜ఇ᠁㻌㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡୍⯡ㅮ₇䚷㻟௳䠄䜾䝷䝣䜵䞁䠅
㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷㻔㻌㻝㻼㻙㻝䚷䡚䚷㻝㻼㻙㻞㻣㻕㻝㻝㻦㻟㻜㻙㻝㻞㻦㻝㻡᫨㣗㻔ᖿ஦఍䠅㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜䚷䠕᭶䠍䠓᪥䚷䠄ᮌ䠅㻥㻦㻜㻜᥋⥆㛤ጞ䚷㻤㻦㻠㻡㻙㻥㻦㻜㻜≉ูㅮ₇㻌㻌㻔୰㔝㻌໷つ㻕㻥㻦㻜㻜㻙㻥㻦㻟㻜㻥㻦㻟㻜 ୍⯡ㅮ₇䚷㻞௳䠄䜾䝷䝣䜵䞁䛾≀ᛶ䠅㻥㻦㻟㻜㻙㻝㻜㻦㻜㻜㻝㻜㻦㻜㻜ఇ᠁㻌㻌㻝㻜㻦㻜㻜㻙㻝㻜㻦㻝㻡㻝㻜㻦㻝㻡኱⃝㈹䞉㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇䚷㻠௳㻝㻜㻦㻝㻡㻙㻝㻝㻦㻟㻡䚷䠕᭶䠍䠔᪥䚷䠄㔠䠅
㻥㻦㻜㻜
㻥㻦㻟㻜

㻝㻜㻦㻟㻜
㻝㻜㻦㻠㻡

䝫䝇䝍䞊䝉䝑䝅䝵䞁㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡ఇ᠁㻌㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡୍⯡ㅮ₇䚷㻞௳䠄䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䠅䚷㻝㻜㻦㻠㻡㻙㻝㻝㻦㻝㻡

㻝㻝㻦㻝㻡
㻝㻝㻦㻟㻡
㻝㻞㻦㻞㻜

䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷㻔㻌㻞㻼㻙㻝䚷䡚䚷㻞㻼㻙㻞㻣㻕㻝㻝㻦㻟㻡㻙㻝㻞㻦㻞㻜᫨㣗㻝㻞㻦㻞㻜㻙㻝㻟㻦㻟㻜

㻝㻞㻦㻜㻜

㻝㻟㻦㻜㻜
㻝㻟㻦㻟㻜

᥋⥆㛤ጞ䚷㻤㻦㻠㻡㻙㻥㻦㻜㻜≉ูㅮ₇㻌㻌㻔୰ᮧ㻌₶ඣ㻕㻥㻦㻜㻜㻙㻥㻦㻟㻜୍⯡ㅮ₇䚷㻠௳䠄ཎᏊᒙ䠅㻥㻦㻟㻜㻙㻝㻜㻦㻟㻜㻝㻟㻦㻟㻜䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷㻔㻌㻟㻼㻙㻝䚷䡚䚷㻟㻼㻙㻞㻢㻌㻕㻝㻝㻦㻝㻡㻙㻝㻞㻦㻜㻜᫨㣗㻝㻞㻦㻜㻜㻙㻝㻟㻦㻜㻜䝫䝇䝍䞊䝉䝑䝅䝵䞁㻝㻟㻦㻜㻜㻙㻝㻠㻦㻠㻡䝫䝇䝍䞊䝉䝑䝅䝵䞁㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡

㻝㻠㻦㻠㻡
㻝㻡㻦㻜㻜

㻝㻡㻦㻝㻡
㻝㻡㻦㻟㻜

ఇ᠁㻌㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜≉ูㅮ₇䚷䠄ụ⏣㻌⠜ᚿ䠅㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻝㻢㻦㻜㻜୍⯡ㅮ₇䚷㻟௳䠄䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䠅㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻝㻢㻦㻠㻡ఇ᠁㻌㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻝㻣㻦㻜㻜≉ูㅮ₇䚷䠄⏣୰㻌ᝅ䠅㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻝㻣㻦㻟㻜୍⯡ㅮ₇䚷㻞௳䠄䝘䝜䝏䝳䞊䝤䠅㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻝㻤㻦㻜㻜ఇ᠁㻌㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻝㻡㻝㻤㻦㻝㻡 䝏䝳䞊䝖䝸䜰䝹䚷䠄ᯇ⏣㻌୍ᡂ䠅䛂䝘䝜䜹䞊䝪䞁䞉ཎᏊᒙ≀㉁䛻䛚
䛡䜛ග≀ᛶ䛾ᇶ♏䛸ᛂ⏝䛃

㻝㻡㻦㻝㻡
㻝㻡㻦㻟㻜
㻝㻢㻦㻜㻜
㻝㻢㻦㻟㻜
㻝㻢㻦㻠㻡
㻝㻣㻦㻟㻜
㻝㻤㻦㻜㻜

ఇ᠁㻌㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜
ᤵ㈹ᘧ
㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜⥲఍㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜ఇ᠁㻌㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡୍⯡ㅮ₇䚷㻟௳䠄䝣䝷䞊䝺䞁䞉䝘䝜Ⅳ⣲⢏Ꮚ㻕㻝㻢㻦㻠㻡㻙㻝㻣㻦㻟㻜≉ูㅮ₇㻌㻌㻔㏿Ỉ㻌┿ஓ㻕㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜୍⯡ㅮ₇䚷㻟௳䠄䜾䝷䝣䜵䞁䛾≀ᛶ䞉ᛂ⏝䠅㻝㻤㻦㻜㻜㻙㻝㻤㻦㻠㻡ఇ᠁㻌㻌㻝㻠㻦㻠㻡㻙㻝㻡㻦㻜㻜≉ูㅮ₇䚷䠄ඵᮌ㻌㝯ከ䠅㻝㻡㻦㻜㻜㻙㻝㻡㻦㻟㻜㻝㻡㻦㻟㻜୍⯡ㅮ₇䚷㻠௳䠄䝘䝜䝏䝳䞊䝤䛾≀ᛶ䞉ᛂ⏝䠅㻝㻡㻦㻟㻜㻙㻝㻢㻦㻟㻜
㻝㻢㻦㻟㻜
㻝㻢㻦㻠㻡
㻝㻣㻦㻝㻡

ఇ᠁㻌㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡≉ูㅮ₇䚷䠄❑⏣㻌ⰾஅ䠅㻝㻢㻦㻠㻡㻙㻝㻣㻦㻝㻡୍⯡ㅮ₇䚷㻞௳䠄䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇䠅䚷㻝㻣㻦㻝㻡㻙㻝㻣㻦㻠㻡㻝㻣㻦㻠㻡≉ูㅮ₇䚷䠄༓㈡㻌ு඾䠅㻝㻣㻦㻠㻡㻙㻝㻤㻦㻝㻡

㻝㻤㻦㻝㻡

㻝㻤㻦㻠㻡

㻝㻤㻦㻝㻡㻙㻝㻥㻦㻠㻡㻝㻥㻦㻠㻡≉ูㅮ₇䚷䚷䚷䚷䚷㻌Ⓨ⾲㻞㻡ศ䞉㉁␲㻡ศ
ཷ㈹ᑐ㇟⪅ㅮ₇䚷Ⓨ⾲㻝㻜ศ䞉㉁␲㻝㻜ศⓎ⾲㻝㻜ศ䞉㉁␲㻝㻜ศ୍⯡ㅮ₇㻌䚷䚷䚷䚷䚷㻌Ⓨ⾲㻝㻜ศ䞉㉁␲㻡ศ䚷㻌Ⓨ⾲㻝㻜ศ䞉㉁␲㻡ศ䢊䢛䡹䡼䡬䢈䢛䢖䢇䢚䡩䡬䚷㻌㻌㻌㻌Ⓨ⾲㻝ศ䞉㉁␲䛺䛧㻌㻌Ⓨ⾲㻝ศ䞉㉁␲䛺䛧i㼀㼕㼙㼑㻌㼠㼍㼎㼘㼑䚷䠄㻻㼚㼘㼕㼚㼑㻌㼂㼑㼞㼠㼡㼍㼘㻌㻿㼥㼙㼜㼛㼟㼕㼡㼙㻌䠅㻿㼑㼜㼠㼑㼙㼜㼑㼞㻌㻝㻢㻌㻔㼃㼑㼐㻚㻕㻿㼑㼜㼠㼑㼙㼜㼑㼞㻌㻝㻣㻌㻔㼀㼔㼡㻚㻕㻿㼑㼜㼠㼑㼙㼜㼑㼞㻌㻝㻤㻌㻔㻲㼞㼕㻚㻕㻿㼑㼟㼟㼕㼛㼚㻌㻻㼜㼑㼚㻌㻔㻯㼛㼚㼚㼑㼏㼠㼕㼛㼚㻌㻯㼔㼑㼏㼗㻕㻿㼑㼟㼟㼕㼛㼚㻌㻻㼜㼑㼚㻌㻔㻯㼛㼚㼚㼑㼏㼠㼕㼛㼚㻌㻯㼔㼑㼏㼗㻕㻿㼑㼟㼟㼕㼛㼚㻌㻻㼜㼑㼚㻌㻔㻯㼛㼚㼚㼑㼏㼠㼕㼛㼚㻌㻯㼔㼑㼏㼗㻕㻤㻦㻠㻜㻙㻥㻦㻝㻜㻥㻦㻝㻜㻻㼜㼑㼚㼕㼚㼓
㻥㻦㻝㻡㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍㻕㻌㻥㻦㻝㻡㻙㻥㻦㻠㻡㻥㻦㻠㻡㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻟㼉㻔㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻕㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜㻝㻜㻦㻟㻜 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻝㻜㻦㻠㻡㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻟㼉㻌㻔㻳㼞㼍㼜㼔㼑㼚㼑㻕㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜㻝㻝㻦㻟㻜㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣䚷㻔㻌㻝㻼㻙㻝䚷㼠㼔㼞㼛㼡㼓㼔䚷㻝㻼㻙㻞㻣㻕㻝㻝㻦㻟㻜㻙㻝㻞㻦㻝㻡
㻝㻞㻦㻝㻡
㻸㼡㼚㼏㼔
㻔㻭㼐㼙㼕㼚㼕㼟㼠㼞㼍㼠㼕㼢㼑㻌㼙㼑㼑㼠㼕㼚㼓㻕㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻤㻦㻠㻡㻙㻥㻦㻜㻜㻥㻦㻜㻜㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻹㼍㼟㼍㼗㼕㻌㻺㼍㼗㼍㼚㼛㻕㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻥㻦㻟㻜㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻞㼉㻤㻦㻠㻡㻙㻥㻦㻜㻜㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻶㼡㼚㼖㼕㻌㻺㼍㼗㼍㼙㼡㼞㼍㻕㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻥㻦㻟㻜㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻠㼉㻔㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻕㻥㻦㻟㻜㻙㻝㻜㻦㻟㻜㻔㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻕㻌㻥㻦㻟㻜㻙㻝㻜㻦㻜㻜㻝㻜㻦㻜㻜 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻜㻦㻜㻜㻙㻝㻜㻦㻝㻡㻝㻜㻦㻝㻡 㻸㼑㼏㼠㼡㼞㼑㼟㻌㼛㼒㻌㻻㼟㼍㼣㼍㻌㻭㼣㼍㼞㼐㼍㼚㼐㻌㻵㼕㼖㼕㼙㼍㻌㻭㼣㼍㼞㼐㻌㻺㼛㼙㼕㼚㼑㼑㼟㻌㼇㻠㼉㻝㻜㻦㻝㻡㻙㻝㻝㻦㻟㻡㻥㻦㻜㻜㻝㻜㻦㻟㻜 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻝㻜㻦㻠㻡㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻞㼉㻔㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻕㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻝㻡

㻝㻝㻦㻝㻡

㻝㻝㻦㻟㻡

㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣䚷㻔㻌㻞㻼㻙㻝䚷㼠㼔㼞㼛㼡㼓㼔䚷㻞㻼㻙㻞㻣㻕㻝㻝㻦㻟㻡㻙㻝㻞㻦㻞㻜
㻝㻞㻦㻞㻜
㻸㼡㼚㼏㼔
㻝㻞㻦㻞㻜㻙㻝㻟㻦㻟㻜㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣䚷㻔㻌㻟㻼㻙㻝䚷㼠㼔㼞㼛㼡㼓㼔䚷㻟㻼㻙㻞㻢㻌㻕㻝㻝㻦㻝㻡㻙㻝㻞㻦㻜㻜
㻝㻞㻦㻜㻜
㻸㼡㼚㼏㼔
㻝㻞㻦㻜㻜㻙㻝㻟㻦㻜㻜
㻝㻟㻦㻜㻜

㻝㻟㻦㻟㻜

㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻝㻡㻦㻝㻡 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻝㻡㻦㻟㻜㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻭㼠㼟㼡㼟㼔㼕㻌㻵㼗㼑㼐㼍㻕㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻝㻢㻦㻜㻜㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻟㼉㻔㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻕㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻝㻢㻦㻠㻡 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻝㻣㻦㻜㻜㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻿㼍㼠㼛㼞㼡㻌㼀㼍㼚㼍㼗㼍㻕㻌㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻝㻣㻦㻟㻜㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻞㼉㻌㻔㻺㼍㼚㼛㼠㼡㼎㼑㼟㻕㻌㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻝㻤㻦㻜㻜 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻝㻡㻝㻤㻦㻝㻡㼀㼡㼠㼛㼞㼕㼍㼘
䠄㻷㼍㼦㼡㼚㼍㼞㼕㻌㻹㼍㼠㼟㼡㼐㼍䠅㻝㻟㻦㻟㻜㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻝㻟㻦㻜㻜㻙㻝㻠㻦㻠㻡㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻝㻡㻦㻝㻡 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻝㻡㻦㻟㻜㻭㼣㼍㼞㼐㻌㻯㼑㼞㼑㼙㼛㼚㼥㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻝㻢㻦㻜㻜㻳㼑㼚㼑㼞㼍㼘㻌㻹㼑㼑㼠㼕㼚㼓㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜㻝㻢㻦㻟㻜 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻝㻢㻦㻠㻡㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻟㼉㻝㻠㻦㻠㻡 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻠㻦㻠㻡㻙㻝㻡㻦㻜㻜㻝㻡㻦㻜㻜㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻾㼥㼡㼠㼍㻌㼅㼍㼓㼕㻕㻌㻝㻡㻦㻜㻜㻙㻝㻡㻦㻟㻜㻝㻡㻦㻟㻜㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻠㼉㻔㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼍㼚㼐㻌㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻕㻝㻡㻦㻟㻜㻙㻝㻢㻦㻟㻜㻝㻢㻦㻟㻜 㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻝㻢㻦㻠㻡㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻲㼡㼘㼘㼑㼞㼑㼚㼑㼟㻌㼍㼚㼐㻌㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟㻕㻔㼅㼛㼟㼔㼕㼥㼡㼗㼕㻌㻷㼡㼎㼛㼠㼍㻕㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻝㻡㻝㻢㻦㻠㻡㻙㻝㻣㻦㻟㻜㻝㻣㻦㻟㻜㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻿㼔㼕㼚㼥㼍㻌㻴㼍㼥㼍㼙㼕㻕㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻝㻤㻦㻜㻜㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻟㼉㻔㻳㼞㼍㼜㼔㼑㼚㼑㻕㻝㻤㻦㻜㻜㻙㻝㻤㻦㻠㻡㻝㻤㻦㻠㻡㻝㻣㻦㻝㻡 㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㼟㻌㼇㻞㼉㻌䠄㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟䠅㻌㻝㻣㻦㻝㻡㻙㻝㻣㻦㻠㻡㻝㻣㻦㻠㻡㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻔㻾㼥㼛㼟㼡㼗㼑㻌㻿㼑㼚㼓㼍㻕㻌㻝㻣㻦㻠㻡㻙㻝㻤㻦㻝㻡㻝㻤㻦㻝㻡㻝㻤㻦㻝㻡㻙㻝㻥㻦㻠㻡㻝㻥㻦㻠㻡㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻦㻌㻌㻞㻡㻌㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㻌㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻭㼣㼍㼞㼐㻌㻺㼛㼙㼕㼚㼑㼑㻌㻸㼑㼏㼠㼡㼞㼑㻌㻦㻌㻌㻝㻜㻌㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻝㻜㻌㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻦㻌㻝㻜㻌㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㻌㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻦㻌㻌㻝㻌㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕iiᗙ㛗୍ぴ㻌㻌(Chairpersons)㻥᭶㻝㻢᪥㻌㻔Ỉ㻕

㻔ᩗ⛠␎䠅

䝉䝑䝅䝵䞁
≉ูㅮ₇ ୸ᒣⱱኵ㸧
୍⯡ㅮ₇
୍⯡ㅮ₇
࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ

᫬䚷䚷䚷㛫
9:15 㹼 9:45
9:45 㹼 10:30
10:45 㹼 11:30
11:30 㹼 12:15

≉ูㅮ₇ ụ⏣⠜ᚿ㸧୍⯡ㅮ₇
≉ูㅮ₇ ⏣୰ᝅ㸧୍⯡ㅮ₇ࢳ࣮ࣗࢺࣜ࢔ࣝ ᯇ⏣୍ᡂ㸧

15:30 㹼 16:00
16:00 㹼 16:45
17:00 㹼 17:30
17:30 㹼 18:00
18:15 㹼 19:45ᗙ䚷䚷䚷㛗㰻⸨⌮୍㑻
ᐑᮏⰋஅ
୸ᒣ㝯ᾈ
ⵦỤ
ᑠ⃝኱࿴
ⓑᮌᬛ୔
'RQ)XWDED
࿃㒓ᾈᶞ
㔝⏣ඃ
኱㔝㞝㧗

㻥᭶㻝㻣᪥㻌㻔ᮌ㻕䝉䝑䝅䝵䞁≉ูㅮ₇ ୰㔝໷つ㸧
୍⯡ㅮ₇
୍⯡ㅮ₇ ཷ㈹ᑐ㇟⪅㸧࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ

᫬䚷䚷䚷㛫
9:00 㹼 9:30
9:30 㹼 10:00
10:15 㹼 11:35
11:35 䡚 12:20

୍⯡ㅮ₇
≉ูㅮ₇ ㏿Ỉ┿ஓ㸧୍⯡ㅮ₇

16:45 䡚 17:30
17:30 䡚 18:00
18:00 䡚 18:45

ᗙ䚷䚷䚷㛗
໭ᾆⰋ
ຍ⸨ಇ㢧
⛅⏣ᡂྖ
ᯇỌṇᗈ
ྜྷཎ┤グ
ᯇᑿ㇏
ோ⛉ຬኴ
ᰗ࿴ᏹ

㻥᭶㻝㻤᪥㻌㻔㔠㻕䝉䝑䝅䝵䞁≉ูㅮ₇ ୰ᮧ₶ඣ㸧
୍⯡ㅮ₇
୍⯡ㅮ₇
࣏ࢫࢱ࣮ࣉࣞࣅ࣮ࣗ

᫬䚷䚷䚷㛫
9:00 㹼 9:30
9:30 㹼 10:30
10:45 㹼 11:15
11:15 㹼 12:00

≉ูㅮ₇ ඵᮌ㝯ከ㸧୍⯡ㅮ₇
≉ูㅮ₇ ❑⏣ⰾஅ㸧୍⯡ㅮ₇
≉ูㅮ₇ ༓㈡ு඾㸧

15:00 㹼 15:30
15:30 㹼 16:30
16:45 䡚 17:15
17:15 䡚 17:45
17:45 㹼 18:15

iii

ᗙ䚷䚷䚷㛗
㧗஭࿴அ
ᐑ⏣⪔඘
㕥ᮌಙ୕
୸ᒣᐇ㑣
୰ᓥ⚽ᮁ
ᶓ஭⿱அ
ᯇ⏣୍ᡂ
‫⏣‮‬ᆏ㞞Ꮚ⸨ࣨ㇂๛ᙪ㛗ộ᫭㍜㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌≉ูㅮ₇䚷䚷䚷Ⓨ⾲㻌䠎䠑ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌≉ูㅮ₇䚷䚷䚷Ⓨ⾲㻌䠎䠑ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌୍⯡ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌୍⯡ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷䚷䚷Ⓨ⾲㻌䠍ศ䚷䞉䚷㉁␲ᛂ⟅㻌䛺䛧㻌䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷䚷䚷Ⓨ⾲㻌䠍ศ䚷䞉䚷㉁␲ᛂ⟅㻌䛺䛧≉ูㅮ₇㻌㻌㻔㻌㻥㻦㻝㻡㻙㻥㻦㻠㻡㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻥㻦㻝㻡㻙㻥㻦㻠㻡㻌㻕㻝㻿㻙㻝୍ḟඖ䝦䝔䝻䝘䝜䝏䝳䞊䝤䛾ྜᡂ䛸ᛂ⏝㻝㻌㻖㻌୸ᒣ㻌ⱱኵ୍⯡ㅮ₇㻌㻌㻔㻌㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜㻌㻕䝘䝜䝏䝳䞊䝤䛾≀ᛶ䝘䝜䝏䝳䞊䝤䛾≀ᛶ㻝㻙㻝䝘䝜䝏䝳䞊䝤⥺ᮦ䛾᢬ᢠ್䛻ぢ䜙䜜䜛⥺ᙧ䛺

ᗘ≉ᛶ

㻝㻝

㻌㻖㻌✄ⴥ㻌ᕤ㻘㻌᳃ᮏ㻌ᓫᏹ㻘㻌ᒣᓮ㻌ᝅᚿ㻘㻌ᒸᓮ㻌ಇஓ㻝㻙㻞༢ᒙ㻹㼛㻿㻞䝘䝜䝏䝳䞊䝤䛾㛫᥋㻙┤᥋䝞䞁䝗䜼䝱䝑䝥䜽䝻䝇䜸䞊䝞䞊㻝㻞㻌㻖㻌ஂ㛫㻌㤾㻘㻌୸ᒣ㻌ᐇ㑣㻘㻌ᒸ⏣㻌᫴㻘㻌༓㊊㻌᪼ᖹ㻘㻌୸ᒣ㻌ⱱኵ㻝㻙㻟㻰㼕㼍㼙㼑㼠㼑㼞㻙㼐㼑㼜㼑㼚㼐㼑㼚㼠㻌㻼㼔㼛㼠㼛㼘㼡㼙㼕㼚㼑㼟㼏㼑㼚㼏㼑㻌㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼕㼚㻌㻯㼛㼘㼛㼞㻌㻯㼑㼚㼠㼑㼞㼟㻌㼛㼒㻌㻭㼕㼞㻙㻿㼡㼟㼜㼑㼚㼐㼑㼐㻿㼕㼚㼓㼘㼑㻙㼃㼍㼘㼘㼑㼐㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㼟㻝㻟㻌㻖㻌㻰㼍㼕㼏㼔㼕㻌㻷㼛㼦㼍㼣㼍㻘㻌㼄㼕㼍㼛㼖㼕㼍㼚㻌㼃㼡㻘㻌㻭㼗㼕㼔㼕㼞㼛㻌㻵㼟㼔㼕㼕㻘㻌㻶㼍㼏㼛㼎㻌㻲㼛㼞㼠㼚㼑㼞㻘㻌㻷㼑㼕㼓㼛㻌㻻㼠㼟㼡㼗㼍㻘㻌㻾㼛㼚㼓㻌㼄㼕㼍㼚㼓㻘㼀㼍㼕㼗㼕㻌㻵㼚㼛㼡㼑㻘㻌㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍㻘㻌㼅㼡㻴㼡㼍㼚㼓㻌㼃㼍㼚㼓㻘㻌㼅㼡㼕㼏㼔㼕㼞㼛㻌㻷㻚㻌㻷㼍㼠㼛㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘୍⯡ㅮ₇㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜㻌㻕䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ㻝㻙㻠㻱㼚㼑㼞㼓㼑㼠㼕㼏㼟㻌㼍㼚㼐㻌㼑㼘㼑㼏㼠㼞㼛㼚㼕㼏㻌㼟㼠㼞㼡㼏㼠㼡㼞㼑㻌㼛㼒㻌㼎㼕㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼕㼚㼠㼑㼞㼏㼍㼘㼍㼠㼕㼚㼓㻌㼎㼡㼏㼗㼥㼎㼛㼣㼘㼟㻝㻠㻌㻖㻌㻹㼕㼚㼍㻌㻌㻹㼍㼞㼡㼥㼍㼙㼍㻘㻌㻿㼡㼟㼡㼙㼡㻌㻻㼗㼍㼐㼍䜾䝷䝣䜵䞁⏕ᡂ䜾䝷䝣䜵䞁⏕ᡂ㻝㻙㻡䜾䝷䝣䜵䞁䝘䝜䝸䝪䞁䜢⏝䛔䛯䝃䜲䝈ไᚚ㔞Ꮚ䝗䝑䝖䛾┤᥋ྜᡂ㻝㻡㻌㻖㻌℩ᑿ㻌⍞ᶞ㻘㻌໭⏣㻌Ꮥோ㻘㻌㔠Ꮚ㻌ಇ㑻㻘㻌኱ሯ㻌᭸ᘅ㻘㻌ຍ⸨㻌ಇ㢧䜾䝷䝣䜵䞁䛾ᛂ⏝䜾䝷䝣䜵䞁䛾ᛂ⏝㻝㻙㻢㻴㼕㼓㼔㻙㼛㼞㼐㼑㼞㻌㼙㼛㼐㼑㻌㼛㼜㼑㼞㼍㼠㼕㼛㼚㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼙㼑㼏㼔㼍㼚㼕㼏㼍㼘㻌㼞㼑㼟㼛㼚㼍㼠㼛㼞㻝㻢㻌㻖㻌㻴㼕㼞㼛㼒㼡㼙㼕㻌㻵㼗㼑㼙㼛㼠㼛㻘㻌㻷㼍㼕㼠㼛㻌㻺㼍㼗㼍㼓㼍㼣㼍㻘㻌㼀㼍㼕㼏㼔㼕㻌㻵㼚㼛㼡㼑㻘㻌㻷㼡㼚㼕㼔㼍㼞㼡㻌㼀㼍㼗㼑㼕㻘㻌㼀㼍㼗㼍㼥㼡㼗㼕㻌㻭㼞㼕㼑㻘㻌㻿㼑㼕㼖㼕㻭㼗㼕㼠㼍䝫䝇䝍䞊䝥䝺䝡䝳䞊㻌㻌㻔㻌㻝㻝㻦㻟㻜㻙㻝㻞㻦㻝㻡㻌㻕䚷䚷㻌䚷䠄䖪䠅䚷ⱝᡭዡບ㈹ೃ⿵
䝫䝇䝍䞊䝥䝺䝡䝳䞊㻌㻌㻔㻌㻝㻝㻦㻟㻜㻙㻝㻞㻦㻝㻡㻌㻕䚷䚷㻌䚷䠄䖪䠅䚷ⱝᡭዡບ㈹ೃ⿵
ⱝᡭዡບ㈹ೃ⿵
ⱝᡭዡບ㈹ೃ⿵㻝㻼㻙㻝䖪ሷ໬㕲䜢ゐ፹๓㥑య䛻⏝䛔䛯ከᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾ᡂ㛗䝯䜹䝙䝈䝮㻠㻣㻌㻖㻌ᯘ㻌❳ᘯ㻘㻌୰㔝㻌㈗அ㻘㻌஭ୖ㻌⩼㻝㻼㻙㻞㻸㼕㼓㼔㼠㻙㼐㼞㼕㼢㼑㼚㻌㼣㼍㼢㼑㼘㼑㼚㼓㼠㼔㻌㼟㼔㼕㼒㼠㼟㻌㼛㼒㻌㼜㼔㼛㼠㼛㼘㼡㼙㼕㼚㼑㼟㼏㼑㼚㼏㼑㻌㼒㼞㼛㼙㻌㼟㼕㼚㼓㼘㼑㻙㼣㼍㼘㼘㼑㼐㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㼎㼥㻌㼒㼡㼚㼏㼠㼕㼛㼚㼍㼘㼕㼦㼍㼠㼕㼛㼚㻌㼣㼕㼠㼔㻌㼐㼕㼍㼞㼥㼘㼑㼠㼔㼑㼚㼑㻌㼐㼑㼞㼕㼢㼍㼠㼕㼢㼑㼟䖪㻌㻖㻌୰ᕝ㻌Ὀே㻘㻌୰ᔱ㻌⌶ஓ㻘㻌Ἑྜ㻌ኋ㻘㻌⸨䞄㇂㻌๛ᙪ㻘㻌ⓑᮌ㻌ᬛ୔㻝㻼㻙㻟䝣䝺䜻䝅䝤䝹ⷧ⭷䝖䝷䞁䝆䝇䝍䛻ྥ䛡䛯ᯫᶫᛶ䜰䝭䞁䝫䝸䝬䞊䜢⏝䛔䛯䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤
ⷧ⭷䛾〇⭷

䖪

㻌㻖㻌ᯇᮏ㻌ᾏᡂ㻘㻌ୖ㔝㻌࿴ᶞ㻘㻌ᘅ㇂㻌₶㻘㻌኱㔝㻌㞝㧗㻘㻌኱⏫㻌㑈

iv

㻠㻤

㻠㻥

㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻝㻼㻙㻠ᒁᡤ໬Ꮫಟ㣭༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾⁐፹⎔ቃ䛻ᑐ䛩䜛ບ㉳Ꮚ䜶䝛䝹䜼䞊ኚ໬䛸䛭䛾
ᵓ㐀౫Ꮡᛶ

䖪

㻌㻖㻌᪂␃㻌჆ᙯ㻘㻌⸨䞄㇂㻌๛ᙪ㻘㻌ⓑᮌ㻌ᬛ୔㻝㻼㻙㻡㼂㼕㼟㼡㼍㼘㼕㼦㼍㼠㼕㼛㼚㻌㼛㼒㻌㼠㼔㼑㼞㼙㼍㼘㻌㼠㼞㼍㼚㼟㼜㼛㼞㼠㼟㻌㼛㼚㻌㼎㼡㼚㼐㼘㼑㼐㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻌㼎㼥㻌㼙㼛㼚㼕㼠㼛㼞㼕㼚㼓㻌㼑㼢㼍㼜㼛㼞㼍㼠㼕㼛㼚㼛㼒㻌㼓㼛㼘㼐㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟䖪㻌㻖㻌㻴㼕㼞㼛㼙㼡㻌㻴㼍㼙㼍㼟㼍㼗㼕㻘㻌㻿㼑㼕㼥㼍㻌㼀㼍㼗㼕㼙㼛㼠㼛㻘㻌㻷㼍㼛㼞㼕㻌㻴㼕㼞㼍㼔㼍㼞㼍㻝㻼㻙㻢䖪༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾పㄏ㟁⋡᭷ᶵ⁐፹⣔䛻䛚䛡䜛䝊䞊䝍㟁఩㻝㻼㻙㻣䖪䝇䝖䝺䝥䝖䜰䝡䝆䞁䜢」ྜ໬䛧䛯㓟໬䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛻䜘䜛㏆㉥እ⺯ග䜲䝮䝜䜰䝑䝉䜲㻝㻼㻙㻤䖪㻱㼒㼒㼑㼏㼠㼟㻌㼛㼒㻌㼏㼔㼍㼚㼚㼑㼘㻌㼘㼑㼚㼓㼠㼔㻌㼛㼚㻌㼜㼑㼞㼒㼛㼞㼙㼍㼚㼏㼑㻌㼛㼒㻌㼠㼞㼍㼚㼟㼜㼍㼞㼑㼚㼠㻌㼟㼛㼘㼍㼞㻌㼏㼑㼘㼘㻌㻌㼣㼕㼠㼔㻌㼙㼛㼚㼛㼘㼍㼥㼑㼞㻌㼃㻿㻞㻝㻼㻙㻥䖪㻯㼞㻝㻛㻟㻺㼎㻿㼑㻞㉸ⷧ⭷䛻䛚䛡䜛㠃ෆᙉ☢ᛶ

ᐃ

㻡㻜

㻡㻝

㻡㻞

㻌㻖㻌▼஭㻌኱㈗㻘㻌䝪䝷㻌䜰䞁䜺䝘㻘㻌⏣୰㻌┤ᶞ㻘㻌⸨䞄㇂㻌๛ᙪ㻡㻟㻌㻖㻌ඣᓥ㻌ᩗᏊ㻘㻌㣤Ἠ㻌㝧Ꮚ㻘㻌ᙇ㻌Ẹⰾ㻘㻌ᒸᓮ㻌ಇஓ㻡㻠㻌㻖㻌㼄㼕㼚㼓㻌㻴㼑㻘㻌㼀㼛㼟㼔㼕㼞㼛㻌㻷㼍㼚㼑㼗㼛㻘㻌㼀㼛㼟㼔㼕㼍㼗㼕㻌㻷㼍㼠㼛㻡㻡㻌㻖㻌┿ᓥ㻌⿱㈗㻘㻌㻿㼍㼕㼗㼍㻌㻮㼞㼡㼚㼛㻌㻷㼑㼚㼕㼏㼔㼕㻘㻌ᯇᒸ㻌⚽ᶞ㻘㻌୰㔝㻌໷つ㻘㻌ྜྷ⏣㻌カ㻘㻌▼ᆏ㻌㤶Ꮚ㻘㻌ᒾబ㻌⩏ᏹ䝘䝜Ⅳ⣲⢏Ꮚ
䝘
䝜Ⅳ⣲⢏Ꮚ
䝘䝜Ⅳ⣲⢏Ꮚ
㻝㻼㻙㻝㻜㻱㼚㼑㼞㼓㼑㼠㼕㼏㼟㻌㼍㼚㼐㻌㼓㼑㼛㼙㼑㼠㼞㼕㼏㻌㼟㼠㼞㼡㼏㼠㼡㼞㼑㻌㼛㼒㻌㼏㼛㼞㼍㼚㼚㼡㼘㼑㼚㼑㻌㼡㼚㼐㼑㼞㻌㼍㼚㻌㼑㼤㼠㼑㼞㼚㼍㼘㻌㼑㼘㼑㼏㼠㼞㼕㼏㻌㼒㼕㼑㼘㼐㻡㻢㻌㻖㻌㻿㼡㼟㼡㼙㼡㻌㻻㼗㼍㼐㼍㻘㻌㼅㼍㼚㼘㼕㼚㻌㻳㼍㼛㻘㻌㻹㼕㼚㼍㻌㻹㼍㼞㼡㼥㼍㼙㼍䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇㻝㻼㻙㻝㻝᫬㛫౫Ꮡ➨୍ཎ⌮ィ⟬䛻䜘䜛䝣䜵䝮䝖⛊䝺䞊䝄䞊↷ᑕୗ䛷䛾䝃䝤䝘䝜䝯䞊䝖䝹┤ᚄ䝏䝳䞊䝤䛾㑅ᢥ䛾ᥦ᱌

㻡㻣㻌㻖㻌ᐑᮏ㻌Ⰻஅ䝘䝜䝏䝳䞊䝤䛾≀ᛶ䝘䝜䝏䝳䞊䝤䛾≀ᛶ䝘䝜䝏䝳䞊䝤䛾≀ᛶ㻝㻼㻙㻝㻞༙ᑟయᆺ༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾⇕㟁≀ᛶ䛾୍ḟඖᛶ㻡㻤㻌㻖㻌୍䝜℩㻌㐶ኴ㻘㻌ᯇཎ㻌ឡᕹ㻘㻌ⶇ⏣㻌㝧ᖹ㻘㻌ྜྷ⏣㻌ᮒ㔛㻘㻌ୖ἞㻌ᐶ㻘㻌㔠ᶫ㻌㨥฼㻘㻌ⵦ㻌Ụ㻘㻌➉ᘏ㻌኱ᚿ㻘ᒣᮏ㻌㈗༤㻘㻌ᰗ㻌࿴ᏹ㻝㻼㻙㻝㻟㉸㡢Ἴ↷ᑕ䛻䜘䜛⡆౽䛷ຠᯝⓗ䛺༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾Ⓨග≉ᛶไᚚ㻡㻥㻌㻖㻌⤃㔝㻌ඃ௨㻘㻌す㔝㻌ᮒ㡢㻘㻌ᒣ⏣㻌㐨ኵ㻘㻌๓⏣㻌ඃ㻘㻌ዟᖹ㻌᪩⣖㻘㻌ᐑෆ㻌㞝ᖹ㻘㻌ᯇ⏣㻌୍ᡂ㻘㻌ᯇ஭῟㻘㻌୕䝒▼㻌᪉ஓ㻘㻌㕥ᮌ㻌ග᫂䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻌䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻌䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻌㻝㻼㻙㻝㻠㼁㼠㼕㼘㼕㼦㼍㼠㼕㼛㼚㻌㼛㼒㻌㼠㼞㼍㼚㼟㼜㼍㼞㼑㼚㼠㻌㻿㼃㻯㻺㼀㻌㼒㼕㼘㼙㼟㻌㼕㼚㻌㻠㻙㼠㼑㼞㼙㼕㼚㼍㼘㻌㼜㼑㼞㼛㼢㼟㼗㼕㼠㼑㻙㼟㼕㼘㼕㼏㼛㼚㻌㼠㼍㼚㼐㼑㼙㻌㼟㼛㼘㼍㼞㻌㼏㼑㼘㼘㼟㻢㻜㻌㻖㻌㻭㼔㼙㼑㼐㻌㻿㼔㼍㼣㼗㼥㻘㻌㻷㼛㼟㼡㼗㼑㻌㻭㼗㼕㼚㼛㻘㻌㼀㼍㼗㼡㼥㼍㻌㻹㼍㼠㼟㼡㼕㻘㻌㼀㼍㼕㼗㼕㻌㻵㼚㼛㼡㼑㻘㻌㻱㼟㼗㼛㻌㻷㼍㼡㼜㼜㼕㼚㼑㼚㻘㻌㻿㼔㼛㼔㼑㼕㻌㻖㻌㻭㼔㼙㼑㼐㻌㻿㼔㼍㼣㼗㼥㻘㻌㻷㼛㼟㼡㼗㼑㻌㻌㻭㼗㼕㼚㼛㻘㻌㼀㼍㼗㼡㼥㼍㻌㻌㻹㼍㼠㼟㼡㼕㻘㻌㼀㼍㼕㼗㼕㻌㻵㼚㼛㼡㼑㻘㻌㻱㼟㼗㼛㻌㻷㼍㼡㼜㼜㼕㼚㼑㼚㻘㻌㻿㼔㼛㼔㼑㼕㻯㼔㼕㼍㼟㼔㼕㻘㻌㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍㻯㼔㼕㼍㼟㼔㼕㻘㻌㻿㼔㼕㼓㼑㼛㻌㻌㻹㼍㼞㼡㼥㼍㼙㼍㻝㻼㻙㻝㻡㻿㼕㼙㼜㼘㼑㻌㼍㼚㼐㻌㼔㼕㼓㼔㼘㼥㻌㼑㼒㼒㼕㼏㼕㼑㼚㼠㻌㼕㼚㼠㼑㼞㼙㼕㼠㼠㼑㼚㼠㻌㼛㼜㼑㼞㼍㼠㼕㼛㼚㻌㼏㼕㼞㼏㼡㼕㼠㻌㼒㼛㼞㻌㼠㼞㼕㼎㼛㼑㼘㼑㼏㼠㼞㼕㼏㻌㼚㼍㼚㼛㼓㼑㼚㼑㼞㼍㼠㼛㼞㻿㼕㼙㼜㼘㼑㻌㼍㼚㼐㻌㼔㼕㼓㼔㼘㼥㻌㼑㼒㼒㼕㼏㼕㼑㼚㼠㻌㼕㼚㼠㼑㼞㼙㼕㼠㼠㼑㼚㼠㻌㼛㼜㼑㼞㼍㼠㼕㼛㼚㻌㼏㼕㼞㼏㼡㼕㼠㻌㼒㼛㼞㻌㼠㼞㼕㼎㼛㼑㼘㼑㼏㼠㼞㼕㼏㻌㼚㼍㼚㼛㼓㼑㼚㼑㼞㼍㼠㼛㼞㻢㻝㻌㻖㻌㻭㼠㼟㼡㼟㼔㼕㻌㻷㼍㼣㼍㼓㼡㼏㼔㼕㻘㻌㻹㼍㼟㼍㼔㼕㼞㼛㻌㻹㼍㼠㼟㼡㼚㼍㼓㼍㻘㻌㻴㼍㼞㼡㼗㼕㻌㼁㼏㼔㼕㼥㼍㼙㼍㻘㻌㻶㼡㼚㻌㻴㼕㼞㼛㼠㼍㼚㼕㻘㻌㼅㼡㼠㼍㼗㼍㻌㻻㼔㼚㼛㻝㻼㻙㻝㻢㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㻙㻯㼡㻌㼠㼔㼞㼛㼡㼓㼔㻙㻿㼕㻙㼢㼕㼍㻌㼕㼚㼠㼑㼞㼜㼛㼟㼑㼞㻌㼣㼕㼠㼔㻌㻯㼡㻙㼘㼑㼢㼑㼘㻌㼑㼘㼑㼏㼠㼞㼕㼏㼍㼘㻌㼏㼛㼚㼐㼡㼏㼠㼕㼢㼕㼠㼥㻌㼍㼚㼐㻿㼕㻙㼏㼛㼙㼜㼍㼞㼍㼎㼘㼑㻌㼠㼔㼑㼞㼙㼍㼘㻌㼑㼤㼜㼍㼚㼟㼕㼛㼚㻌㻖㻌㝞㻌ᅜᾏ㻘㻌㻿㼡㼚㼐㼍㼞㼍㼙㻌㻾㼍㼖㼥㼍㼟㼔㼞㼑㼑㻘㻌㛵ཱྀ㻌㈗Ꮚ㻘㻌␊㻌㈼἞㻘㻌㻲㼡㼠㼍㼎㼍㻌㻰㼛㼚㻌㻺㻚㻌㻖㻌㝞㻌ᅜᾏ㻘㻌㛵ཱྀ㻌㈗Ꮚ㻘㻌␊㻌㈼἞㻘v

㻢㻞㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻝㻼㻙㻝㻣㻱㼘㼑㼏㼠㼞㼕㼏㼍㼘㻌㼐㼑㼠㼑㼏㼠㼕㼛㼚㻌㼛㼒㻌㼄㻙㼞㼍㼥㻌㼎㼥㻌㼡㼟㼕㼚㼓㻌㼏㼛㼜㼘㼍㼚㼍㼞㻌㻯㻺㼀㻌㼠㼔㼕㼚㻙㼒㼕㼘㼙㻌㼑㼘㼑㼏㼠㼞㼛㼐㼑㼟㻌㼛㼚㻌㻼㻱㻺㻌㼟㼡㼎㼟㼠㼞㼍㼠㼑㻢㻟㻌㻖㻌㕥ᮌ㻌្㻘㻌ᯇ⏣㻌⿱அ㻘㻌▼ᕝ㻌๛ᘯ㻘㻌ᑠす㻌㍤᫛㻘㻌℈㔝㻌Ẏ㻘㻌Ᏻ㣗㻌༤ᚿ㻘㻌኱㔝㻌㞝㧗㻘㻌ᖹᑿ㻌ᩄ㞝㻘㻌▼஭㻌⪽䜾䝷䝣䜵䞁⏕ᡂ䜾䝷䝣䜵䞁⏕ᡂ
䜾䝷䝣䜵䞁⏕ᡂ㻝㻼㻙㻝㻤䜖䜙䛞ᑟධ䝘䝜䝞䞊䛛䜙䛾䜾䝷䝣䜵䞁䝘䝜䝸䝪䞁ไᚚྜᡂ䜾䝷䝣䜵䞁⏕ᡂ㻢㻠㻌㻖㻌బ⸨㻌ᑦ㑳㻘㻌㔠Ꮚ㻌ಇ㑻㻘㻌ຍ⸨㻌ಇ㢧㻝㻼㻙㻝㻥䜾䝷䝣䜵䞁ᡂ㛗䛻⏝䛔䜛䝃䝣䜯䜲䜰ᇶᯈୖᕧ኱䜾䝺䜲䞁㻺㼕ⷧ⭷䛾స〇㻢㻡㻌㻖㻌୰ᓥ㻌ㄹே㻘㻌ᶔᑿ㻌㐩ஓ㻘㻌ᮧᶫ㻌▱᫂㻘㻌᭮ᡃ㻌ྖ㻘㻌୸ᒣ㻌㝯ᾈ㻘㻌ᡂሯ㻌㔜ᘺ䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶᅇ㌿ゅ㻜㻚㻡ᗘ௨ୗ䛷䛾㻞ᯛ䜾䝷䝣䜵䞁䝰䜰䝺ゎᯒ䜢䝁䞁䝢䝳䞊䝍䜲䝯䞊䝆䞁䜾䛷䛩䜛ᩍ⫱ⓗព

㻝㻼㻙㻞㻜

⩏

㻢㻢

㻌㻖㻌ኟ┠㻌㞝ᖹ㻘㻌᳃㇂㻌ᮾᖹ㻝㻼㻙㻞㻝㻾㼍㼙㼍㼚㻌㼛㼜㼠㼛㼠㼔㼑㼞㼙㼍㼘㻌㼙㼑㼠㼔㼛㼐㼟㻌㼠㼛㻌㼙㼑㼍㼟㼡㼞㼑㻌㼕㼚㼠㼑㼞㼒㼍㼏㼕㼍㼘㻌㼠㼔㼑㼞㼙㼍㼘㻌㼏㼛㼚㼐㼡㼏㼠㼍㼚㼏㼑㻌㼛㼒㻌㼘㼛㼣㻙㼐㼕㼙㼑㼚㼟㼕㼛㼚㼍㼘㼙㼍㼠㼑㼞㼕㼍㼘㼟㻢㻣㻌㻖㻌ᮤ㻌⛙ᐅ㻘㻌㧗ᶫ㻌ཌྐ䜾䝷䝣䜵䞁䛾ᛂ⏝䜾䝷䝣䜵䞁䛾ᛂ⏝䜾䝷䝣䜵䞁䛾ᛂ⏝㻝㻼㻙㻞㻞㻺㼛㼚㻙㼐㼕㼒㼒㼡㼟㼕㼢㼑㻌㼙㼛㼘㼑㼏㼡㼘㼍㼞㻌㼠㼞㼍㼚㼟㼜㼛㼞㼠㻌㼕㼚㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼘㼕㼝㼡㼕㼐㻌㼏㼑㼘㼘㼟䜾䝷䝣䜵䞁䛾ᛂ⏝㻌㻖㻌ᘅᕝ㻌㣁ử㻘㻌ᡭᔱ㻌⚽ᙲ㻘㻌࿃㒓㻌ᾈᶞ㻘㻌ር㻌㝧Ꮚ㻘㻌ᮤ㻌⛙ᐅ㻘㻌㧗ᶫ㻌ཌྐ㻌㻖㻌ᘅᕝ㻌㣁ử㻘㻌ᡭᔱ㻌⚽ᙲ㻘㻌䝋䝸䝇㻌䝣䜵䝹䝘䞁䝕䝇㻌䝟䝤䝻㻘㻌࿃㒓㻌ᾈᶞ㻘㻌ር㻌㝧Ꮚ㻘㻌ᮤ㻌⛙ᐅ㻘㻌㧗
ᶫ㻌ཌྐ
ཎᏊᒙ
ཎᏊᒙ
ཎ
Ꮚᒙ
ཎᏊᒙ
㻝㻼㻙㻞㻟

㻸㼍㼥㼑㼞㻙㼟㼑㼘㼑㼏㼠㼕㼢㼑㻌㼐㼛㼜㼍㼚㼠㻌㼕㼙㼜㼘㼍㼚㼠㼍㼠㼕㼛㼚㻌㼕㼚㻌㼢㼍㼚㻌㼐㼑㼞㻌㼃㼍㼍㼘㼟㻌㼔㼑㼠㼑㼞㼛㼟㼠㼞㼡㼏㼠㼡㼞㼑㼟㻢㻤㻢㻥㻌㻖㻌㻴㼕㼞㼛㼠㼛㻌㻻㼓㼡㼞㼍㻘㻌㼅㼡㼥㼍㻌㻹㼡㼞㼍㼕㻘㻌㼀㼛㼟㼔㼕㼒㼡㼙㼕㻌㻌㻵㼞㼕㼟㼍㼣㼍㻘㻌㼆㼔㼑㼚㼓㻌㻌㻸㼕㼡㻘㻌㻴㼕㼞㼛㼟㼔㼕㻌㻌㻿㼔㼕㼙㼕㼦㼡㻘㻌㻴㼛㼚㼓㻌㻱㼚㻌㻖㻌㻴㼕㼞㼛㼠㼛㻌㻻㼓㼡㼞㼍㻘㻌㼅㼡㼥㼍㻌㻹㼡㼞㼍㼕㻘㻌㼀㼛㼟㼔㼕㼒㼡㼙㼕㻌㻵㼞㼕㼟㼍㼣㼍㻘㻌㼆㼔㼑㼚㼓㻌㻸㼕㼡㻘㻌㻴㼕㼞㼛㼟㼔㼕㻌㻿㼔㼕㼙㼕㼦㼡㻘㻌㻴㼛㼚㼓㻌㻱㼚㻌㻸㼕㼙㻘㻸㼕㼙㻘㻌㼅㼡㼟㼡㼗㼑㻌㻌㻺㼍㼗㼍㼚㼕㼟㼔㼕㻘㻌㼀㼍㼗㼍㼔㼕㼗㼛㻌㻌㻱㼚㼐㼛㻘㻌㻾㼥㼛㻌㻌㻷㼕㼠㼍㼡㼞㼍㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻌㻹㼕㼥㼍㼠㼍㼅㼡㼟㼡㼗㼑㻌㻺㼍㼗㼍㼚㼕㼟㼔㼕㻘㻌㼀㼍㼗㼍㼔㼕㼗㼛㻌㻱㼚㼐㼛㻘㻌㻾㼥㼛㻌㻷㼕㼠㼍㼡㼞㼍㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍㻝㻼㻙㻞㻠㼀㼍㻿㻞䜈䛾Ỉ⣲྾╔䛻䜘䜛㟁Ꮚ≀ᛶ䜈䛾ᙳ㡪㻣㻜㻌㻖㻌▼㯮㻌ᗣᚿ㻘㻌ඣ⋢㻌ᑦᏊ㻘㻌㻷㼕㼞㼕㼘㼘㻌㻮㼛㼓㼐㼍㼚㼛㼢㻘㻌㻭㼘㼑㼤㼍㼚㼐㼑㼞㻌㻮㼍㼞㼍㼚㼛㼢㻘㻌㧗஭㻌࿴அ䝘䝜䝽䜲䝲䞊
䝘䝜䝽䜲䝲䞊
䝘䝜䝽䜲䝲䞊䝘䝜䝽䜲䝲䞊
㻝㻼㻙㻞㻡㻿㼕㼙㼜㼘㼑㻌㼒㼛㼞㼙㼡㼘㼍㻌㼛㼒㻌㼑㼚㼔㼍㼚㼏㼑㼙㼑㼚㼠㻌㼛㼒㻌㼠㼔㼑㻌㼑㼘㼑㼏㼠㼞㼕㼏㻌㼒㼕㼑㼘㼐㻌㼕㼚㼟㼕㼐㼑㻌㼍㻌㼔㼛㼘㼘㼛㼣㻌㼙㼍㼠㼍㼘㼘㼕㼏㻌㼏㼥㼘㼕㼚㼐㼑㼞㻿㼕㼙㼜㼘㼑㻌㼒㼛㼞㼙㼡㼘㼍㻌㼛㼒㻌㼑㼚㼔㼍㼚㼏㼑㼙㼑㼚㼠㻌㼛㼒㻌㼠㼔㼑㻌㼑㼘㼑㼏㼠㼞㼕㼏㻌㼒㼕㼑㼘㼐㻌㼕㼚㼟㼕㼐㼑㻌㼍㻌㼔㼛㼘㼘㼛㼣㻌㼙㼍㼠㼍㼘㼘㼕㼏㻌㼏㼥㼘㼕㼚㼐㼑㼞㻣㻝㻌㻖㻌㼅㼡㼍㼚㻌㼀㼕㼍㼚㻘㻌㻹㼡㼔㼍㼙㼙㼍㼐㻌㻿㼔㼛㼡㼒㼕㼑㻌㼁㼗㼔㼠㼍㼞㼥㻘㻌㻾㼕㼕㼏㼔㼕㼞㼛㻌㻌㻿㼍㼕㼠㼛㻌㻖㻌㼅㼡㼍㼚㻌㼀㼕㼍㼚㻘㻌㻹㼡㼔㼍㼙㼙㼍㼐㻌㻿㼔㼛㼡㼒㼕㼑㻌㼁㼗㼔㼠㼍㼞㼥㻘㻌㻾㼕㼕㼏㼔㼕㼞㼛㻌㻿㼍㼕㼠㼛㻝㻼㻙㻞㻢㼀㼑㼘㼘㼡㼞㼕㼦㼍㼠㼕㼛㼚㻌㼛㼒㻌㼟㼛㼘㼡㼠㼕㼛㼚㻙㼟㼥㼚㼠㼔㼑㼟㼕㼦㼑㼐㻌㼠㼡㼚㼓㼟㼠㼑㼚㻌㼛㼤㼕㼐㼑㻌㼚㼍㼚㼛㼣㼕㼞㼑㼟㻣㻞㻌㻖㻌㻹㼍㼕㻌㻺㼍㼓㼍㼚㼛㻘㻌㼅㼛㼔㼑㼕㻌㼅㼛㼙㼛㼓㼕㼐㼍㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍㻘㻌㻷㼍㼦㼡㼔㼕㼞㼛㻌㻌㼅㼍㼚㼍㼓㼕㻌㻖㻌㻹㼍㼕㻌㻺㼍㼓㼍㼚㼛㻘㻌㼅㼛㼔㼑㼕㻌㼅㼛㼙㼛㼓㼕㼐㼍㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍㻘㻌㻷㼍㼦㼡㼔㼕㼞㼛㻌㼅㼍㼚㼍㼓㼕
䛭䛾௚
䛭䛾௚
䛭
䛾௚
䛭䛾௚
㻝㻼㻙㻞㻣

㻲㼕㼞㼟㼠㻙㼜㼞㼕㼚㼏㼕㼜㼘㼑㼟㻌㼏㼍㼘㼏㼡㼘㼍㼠㼕㼛㼚㻌㼛㼒㻌㼑㼤㼏㼕㼠㼛㼚㼕㼏㻌㼑㼒㼒㼑㼏㼠㻌㼕㼚㻌㻾㼍㼙㼍㼚㻌㼟㼜㼑㼏㼠㼞㼍㻌㻖㻌㼄㼕㼍㼛㼝㼕㻌㻼㼍㼚㼓㻘㻌㼀㻚㻴㼡㼚㼓㻌㻺㼓㼡㼥㼑㼚㻘㻌㻾㼕㼕㼏㼔㼕㼞㼛㻌㻿㼍㼕㼠㼛㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕䚷䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕䚷䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕䚷㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘vi㻣㻟㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅㻌䠕᭶㻌䠍䠒᪥㻌䠄Ỉ䠅≉ูㅮ₇㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕㻝㻿㻙㻞䝸䝫䝋䞊䝮䛻ෆໟ䛧䛯ගᤕ㞟ศᏊ䠉㻯㻢㻜ㄏᑟయ஧ඖ⣔䜢⏝䛔䜛ග⥺ຊᏛ἞⒪ἲ䜈䛾ᛂ⏝㻞㻌㻖㻌㻭㼠㼟㼡㼟㼔㼕㻌㻵㼗㼑㼐㼍㻘㻌㻰㼍㼕㼗㼕㻌㻭㼚㼠㼛㼗㼡㻘㻌㻷㼛㼡㼠㼍㻌㻿㼡㼓㼕㼗㼍㼣㼍㻘㻌㻾㼕㼗㼡㻌㻷㼍㼣㼍㼟㼍㼗㼕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻌㻕䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻝㻙㻣㻻㼚㼑㻌㼐㼕㼙㼑㼚㼟㼕㼛㼚㼍㼘㻌㼔㼑㼠㼑㼞㼛㻙㼖㼡㼚㼏㼠㼕㼛㼚㻌㼐㼕㼛㼐㼑㻝㻣㻌㻖㻌㼅㼍㻌㻲㼑㼚㼓㻘㻌㻴㼑㼚㼍㼚㻌㻸㼕㻘㻌㼀㼍㼕㼗㼕㻌㻵㼚㼛㼡㼑㻘㻌㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍㻝㻙㻤㻼㼛㼘㼥㼍㼞㼛㼙㼍㼠㼕㼏㻌㻭㼚㼠㼔㼞㼍㼏㼑㼚㼑㻌㻺㼍㼚㼛㻙㼠㼣㼑㼑㼦㼑㼞㻌㼛㼚㻌㻿㼑㼙㼕㼏㼛㼚㼐㼡㼏㼠㼕㼚㼓㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㼟㻌㼒㼛㼞㻌㻳㼞㼛㼣㼠㼔㼍㼚㼐㻌㻮㼞㼕㼐㼓㼕㼚㼓㻌㼛㼒㻌㻼㼑㼞㼛㼢㼟㼗㼕㼠㼑㻌㻯㼞㼥㼟㼠㼍㼘㻌㻳㼞㼍㼕㼚㼟㻌㼕㼚㻌㻼㼑㼞㼛㼢㼟㼗㼕㼠㼑㻌㻿㼛㼘㼍㼞㻌㻯㼑㼘㼘㼟㻝㻤㻌㻖㻌ᯘ㻌ᪿ༖㻘㻌⏣㻌᪥㻘㻌ᯇᑿ㻌㇏㻘㻌୸ᒣ㻌ⱱኵ㻝㻙㻥㻭㼘㼕㼓㼚㼑㼐㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㻛㼜㼛㼘㼥㼙㼑㼞㻌㼏㼛㼙㼜㼛㼟㼕㼠㼑㻌㼒㼕㼘㼙㼟㻌㼒㼛㼞㻌㼔㼕㼓㼔㻌㼠㼔㼑㼞㼙㼍㼘㻌㼐㼕㼒㼒㼡㼟㼕㼢㼕㼠㼥㻝㻥㻌㻖㻌㻹㼍㼕㼞㼑㼥㼑㼑㻌㻮㼔㼍㼠㼠㼍㼏㼔㼍㼞㼥㼍㻘㻌㻹㼍㼚㼕㼟㼔㻌㻼㼍㼚㼐㼑㼥㻘㻌㻾㼥㼛㻌㻭㼎㼑㻘㻌㻺㼍㼛㼒㼡㼙㼕㻌㻻㼗㼍㼙㼛㼠㼛㻘㻌㼅㼡㼗㼕㻌㻿㼑㼗㼕㼙㼛㼠㼛㻘㻹㼍㼟㼍㼗㼍㼦㼡㻌㻺㼍㼗㼍㼙㼡㼞㼍㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘≉ูㅮ₇㻌㻌㻔㻌㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻌㻕㻝㻿㻙㻟㼀㼣㼕㼟㼠㼑㼐㻌㼎㼕㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼣㼕㼠㼔㻌㼏㼘㼑㼍㼚㻌㼕㼚㼠㼑㼞㼒㼍㼏㼑㻌㼎㼥㻌㼐㼕㼞㼑㼏㼠㻌㼠㼞㼍㼚㼟㼒㼑㼞㻌㼛㼒㻌㻯㼂㻰㻌㼓㼞㼍㼜㼔㼑㼚㼑㻟㻌㻖㻌㻿㼍㼠㼛㼞㼡㻌㼀㼍㼚㼍㼗㼍㻘㻌㻴㼕㼠㼛㼟㼔㼕㻌㻵㼙㼍㼙㼡㼞㼍㻘㻌㻭㼚㼠㼛㼚㻌㼂㼕㼟㼕㼗㼛㼢㼟㼗㼕㼥㻘㻌㻾㼥㼛㼟㼡㼗㼑㻌㼁㼛㼠㼍㼚㼕㻘㻌㼀㼍㼗㼍㼟㼔㼕㻌㻷㼍㼖㼕㼣㼍㼞㼍㻘㻴㼕㼞㼛㼟㼔㼕㻌㻭㼚㼐㼛㻘㻌㼀㼍㼗㼡㼟㼔㼕㻌㻵㼕㼙㼛㼞㼕㻘㻌㻷㼛㼠㼍㻌㻵㼣㼍㼠㼍㻘㻌㼀㼛㼟㼔㼕㼛㻌㻹㼕㼥㼍㼙㼍㼏㼔㼕㻘㻌㻷㼍㼚㻌㻺㼍㼗㼍㼠㼟㼡㼖㼕㻘㻌㻷㼍㼦㼡㼔㼕㼗㼛㻹㼍㼟㼑㻘㻌㼀㼑㼠㼟㼡㼞㼛㼔㻌㻿㼔㼕㼞㼍㼟㼍㼣㼍㻘㻌㻲㼡㼙㼕㼛㻌㻷㼛㼙㼛㼞㼕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇㻝㻙㻝㻜䝬䜲䜽䝻䝥䝷䝈䝬䝸䜰䜽䝍䞊䜢⏝䛔䛯㧗⤖ᬗᛶ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾Ẽ┦ᡂ㛗䛸ᒁᡤ⵨╔㻞㻜㻌㻖㻌㎷㻌ாᚿ㻘㻌ΎỈ㻌⚞ᶞ㻘㻌㔠㻌㍕ᾈ㻘㻌ᴬ⏣㻌๰㻘㻌␊㻌㈼἞㻘㻌䝣䝍䝞㻌䝗䞁㻘㻌ᱜ஭㻌ಇ௓ෆໟ䝘䝜䝏䝳䞊䝤
ෆໟ䝘䝜䝏䝳䞊䝤
㻝㻙㻝㻝᣺ື䛩䜛䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤ෆ䛷䝅䝱䝖䝹㐠ື䛩䜛䝣䝷䞊䝺䞁ศᏊ䛾ᐇ᫬㛫䜲䝯䞊䝆䞁䜾㻌㻖㻌ΎỈ㻌ಇᶞ㻘㻌䝹䞁䝀䝸䝑䝠㻌䝗䝭䝙䜽㻘㻌䝇䝍䝑䜽䝘䞊㻌䝆䝵䝅䝳䜰㻘㻌ᮧᒣ㻌ගᏹ㻘㻌ཎ㔝㻌ᖾ἞㻘㻌୰ᮧ㻌ᰤ୍㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘䝏䝳䞊䝖䝸䜰䝹㻌㻌㻔㻌㻝㻤㻦㻝㻡㻙㻝㻥㻦㻠㻡㻌㻕䝏䝳䞊䝖䝸䜰䝹㻌㻌㻔㻌㻝㻤㻦㻝㻡㻙㻝㻥㻦㻠㻡㻌㻕䝘䝜䜹䞊䝪䞁䞉ཎᏊᒙ≀㉁䛻䛚䛡䜛ග≀ᛶ䛾ᇶ♏䛸ᛂ⏝㻌㻖㻌ᯇ⏣㻌୍ᡂvii㻞㻝㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻌≉ูㅮ₇䚷䚷䚷Ⓨ⾲㻌䠎䠑ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌≉ูㅮ₇䚷䚷䚷Ⓨ⾲㻌䠎䠑ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌㻌㻌㻌㻌୍⯡ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌㻌㻌㻌㻌୍⯡ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ䚷䚷䚷䚷䚷䚷䚷䚷䚷኱⃝㈹䞉㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠍䠌ศ䚷䚷䚷䚷䚷䚷䚷䚷䚷኱⃝㈹䞉㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠍䠌ศ㻌䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷䚷䚷Ⓨ⾲㻌䠍ศ䚷䞉䚷㉁␲ᛂ⟅㻌䛺䛧㻌䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷䚷䚷Ⓨ⾲㻌䠍ศ䚷䞉䚷㉁␲ᛂ⟅㻌䛺䛧≉ูㅮ₇㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕㻞㻿㻙㻝㻹㻮㻱䛷ษ䜚ᣅ䛟䝣䜯䞁䝕䝹䝽䞊䝹䝇⏺㠃䛾๰Ⓨ㍺㏦⌧㇟㻠㻌㻖㻌୰㔝㻌໷つ୍⯡ㅮ₇㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻜㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻜㻜㻌㻕䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ㻞㻙㻝ᵓ㐀Ḟ㝗䜢࿘ᮇⓗ䛻ᑟධ䛧䛯䜾䝷䝣䜵䞁䛾㟁Ꮚ≀ᛶ㻞㻞㻌㻖㻌⏣ཱྀ㻌⿱ኴ㻘㻌ᩪ⸨㻌᫴㻞㻙㻞㻯㼛㼚㼠㼞㼛㼘㻌㼛㼒㻌㼠㼔㼑㻌㼜㼔㼛㼠㼛㼘㼡㼙㼕㼚㼑㼟㼏㼑㼚㼏㼑㻌㼎㼥㻌㼠㼡㼚㼕㼚㼓㻌㼠㼔㼑㻌㻲㼑㼞㼙㼕㻌㼘㼑㼢㼑㼘㻌㼕㼚㻌㼟㼕㼚㼓㼘㼑㻙㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻞㻟㻌㻖㻌≟㣫㻌኱ᶞ㻘㻌ᩧ⸨㻌೺㍜㻘㻌ᑠᒣ㻌๛ྐ㻘㻌Ἑཎ㻌᠇἞㻘㻌࿃㒓㻌ᾈᶞ㻘㻌ᓊ⏣㻌ⱥኵ㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻜㻦㻜㻜㻙㻝㻜㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻜㻦㻜㻜㻙㻝㻜㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘୍⯡ㅮ₇㻌㻌㻔㻌㻝㻜㻦㻝㻡㻙㻝㻝㻦㻟㻡㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻜㻦㻝㻡㻙㻝㻝㻦㻟㻡㻌㻕኱⃝㈹䞉㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇኱⃝㈹䞉㣤ᓥ㈹ཷ㈹ᑐ㇟⪅ㅮ₇㻞㻙㻟㑄⛣㔠ᒓ䜹䝹䝁䝀䝘䜲䝗䛾୍ḟඖ≀㉁䛾⢭ᐦྜᡂ䛸ホ౯㻞㻠㻌㻖㻌୰す㻌ຬ௓㻘㻌⚄⏣㻌┤அ㻘㻌Ᏻ⸨㻌༓㔛㻘㻌Ọ⏣㻌㞞㈗㻘㻌┦ᓮ㻌ඖᕼ㻘㻌๽㻌ᓽ㻘㻌ᚿ㈡㻌ᣅ㯢㻘㻌ᮎỌ㻌࿴▱㻘㻌⠛ཎ㻌ஂ඾㻘㻌ᐑ⏣㻌⪔඘㻞㻙㻠㻵㼟㼛㼠㼔㼑㼞㼙㼍㼘㻌㼓㼞㼛㼣㼠㼔㻌㼍㼚㼐㻌㼟㼠㼍㼏㼗㼕㼚㼓㻌㼑㼢㼛㼘㼡㼠㼕㼛㼚㻌㼛㼒㻌㼔㼕㼓㼔㼘㼥㻌㼡㼚㼕㼒㼛㼞㼙㻌㻭㻮㻙㼟㼠㼍㼏㼗㼑㼐㻌㼎㼕㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻞㻡㻌㻖㻌㻼㼍㼎㼘㼛㻌㻿㼛㼘㽸㼟㻙㻲㼑㼞㼚㽬㼚㼐㼑㼦㻘㻌㼅㼡㼞㼕㻌㼀㼑㼞㼍㼛㻘㻌㻷㼑㼚㼖㼕㻌㻷㼍㼣㼍㼔㼍㼞㼍㻘㻌㼃㼍㼠㼍㼞㼡㻌㻺㼕㼟㼔㼕㼥㼍㼙㼍㻘㻌㼀㼑㼑㼞㼍㼥㼡㼠㼁㼣㼍㼚㼚㼛㻘㻌㼅㼡㼚㼓㻙㻯㼔㼍㼚㼓㻌㻸㼕㼚㻘㻌㻷㼑㼕㼟㼡㼗㼑㻌㼅㼍㼙㼍㼙㼛㼠㼛㻘㻌㻴㼕㼞㼛㼟㼔㼕㻌㻺㼍㼗㼍㼟㼔㼕㼙㼍㻘㻌㻷㼛㼟㼡㼗㼑㻌㻺㼍㼓㼍㼟㼔㼕㼛㻘㻴㼕㼞㼛㼗㼕㻌㻴㼕㼎㼕㼚㼛㻘㻌㻷㼍㼦㼡㻌㻿㼡㼑㼚㼍㼓㼍㻘㻌㻴㼕㼞㼛㼗㼕㻌㻭㼓㼛㻞㻙㻡㻯㼛㼚㼏㼕㼟㼑㻘㻌㻿㼕㼚㼓㼘㼑㻙㻿㼠㼑㼜㻌㻿㼥㼚㼠㼔㼑㼟㼕㼟㻌㼛㼒㻌㻿㼡㼘㼒㼡㼞㻙㻱㼚㼞㼕㼏㼔㼑㼐㻌㻳㼞㼍㼜㼔㼑㼚㼑㻦㻌㻵㼙㼙㼛㼎㼕㼘㼕㼦㼍㼠㼕㼛㼚㻌㼛㼒㻌㻹㼛㼘㼑㼏㼡㼘㼍㼞㻯㼘㼡㼟㼠㼑㼞㼟㻌㼍㼚㼐㻌㻮㼍㼠㼠㼑㼞㼥㻌㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻞㻢㻌㻖㻌኱⏫㻌㑈㻘㻌஭ୖ㻌ྖ㻘㻌⏿ᑿ㻌⚽ဢ㻘㻌㻯㼞㼕㼍㼐㼛㻌㻭㼘㼑㼖㼍㼚㼐㼞㼛㻘㻌⠛ཎ㻌ஂ඾㻘㻌ྜྷᕝ㻌ᾈྐ㻘㻌㼆㼛㼕㼟㻌㻿㼥㼞㼓㼕㼍㼚㼚㼕㼟㻘㻌㻹㼍㼡㼞㼕㼦㼕㼛㻌㻼㼞㼍㼠㼛㻞㻙㻢㼃㼍㼒㼑㼞㻙㼟㼏㼍㼘㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻌㼛㼒㻌㻝㻰㻌㼠㼞㼍㼚㼟㼕㼠㼕㼛㼚㻌㼙㼑㼠㼍㼘㻌㼏㼔㼍㼘㼏㼛㼓㼑㼚㼕㼐㼑㻌㼚㼍㼚㼛㼣㼕㼞㼑㼟㻞㻣㻌㻖㻌㻴㼛㼚㼓㻌㻱㼚㻌㻸㼕㼙㻘㻌㼅㼡㼟㼡㼗㼑㻌㻺㼍㼗㼍㼚㼕㼟㼔㼕㻘㻌㼆㼔㼑㼚㼓㻌㻸㼕㼡㻘㻌㻶㼕㼍㼚㼓㻌㻼㼡㻘㻌㼀㼍㼗㼍㼔㼕㼗㼛㻌㻱㼚㼐㼛㻘㻌㻯㼔㼕㼟㼍㼠㼛㻌㻭㼚㼐㼛㻘㻌㻴㼕㼞㼛㼟㼔㼕㻌㻿㼔㼕㼙㼕㼦㼡㻘㻌㻷㼍㼦㼡㼔㼕㼞㼛㻌㼅㼍㼚㼍㼓㼕㻘㻌㼀㼍㼕㼟㼔㼕㻌㼀㼍㼗㼑㼚㼛㼎㼡㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍䝫䝇䝍䞊䝥䝺䝡䝳䞊㻌㻌㻔㻌㻝㻝㻦㻟㻡㻙㻝㻞㻦㻞㻜㻌㻕䚷䚷㻌䚷䠄䖪䠅䚷ⱝᡭዡບ㈹ೃ⿵
䝫䝇䝍䞊䝥䝺䝡䝳䞊㻌㻌㻔㻌㻝㻝㻦㻟㻡㻙㻝㻞㻦㻞㻜㻌㻕䚷䚷㻌䚷䠄䖪䠅䚷ⱝᡭዡບ㈹ೃ⿵
ⱝᡭዡບ㈹ೃ⿵
ⱝᡭዡບ㈹ೃ⿵
㻞㻼㻙㻝㏆᥋໬Ꮫಟ㣭ྍ⬟䛺ಟ㣭ศᏊ䛾ᵓ㐀ኚ໬䛻క䛖ᒁᡤ໬Ꮫಟ㣭༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾Ⓨග≉ᛶኚ໬

䖪㻌㻖㻌㟷ᮌ㻌ᴵⰼ㻘㻌⏣୰㻌┤ᶞ㻘㻌⸨䞄㇂㻌๛ᙪ㻘㻌ⓑᮌ㻌ᬛ୔㻞㻼㻙㻞㼀㼑㼙㼜㼑㼞㼍㼠㼡㼞㼑㻌㼐㼑㼜㼑㼚㼐㼑㼚㼏㼑㻌㼛㼒㻌㻿㼑㼑㼎㼑㼏㼗㻌㼏㼛㼑㼒㼒㼕㼏㼕㼑㼚㼠㼟㻌㼕㼚㻌㻿㼑㼙㼕㼏㼛㼚㼐㼡㼏㼠㼕㼚㼓㻌㼍㼚㼐㻌㻹㼑㼠㼍㼘㼘㼕㼏㻌㻿㼕㼚㼓㼘㼑㻙㼃㼍㼘㼘㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㻌㼒㼕㼘㼙㻚䖪㻌㻖㻌㻭㼗㼍㼞㼕㻌㼅㼛㼟㼔㼕㼐㼍㻘㻌㼅㼛㼠㼍㻌㻵㼏㼔㼕㼚㼛㼟㼑㻘㻌㻷㼑㼚㼓㼛㻌㻲㼡㼗㼡㼔㼍㼞㼍㻘㻌㻷㼍㼚㻌㼁㼑㼖㼕㻘㻌㼅㼛㼔㼑㼕㻌㼅㼛㼙㼛㼓㼕㼐㼍㻘㻌㻷㼍㼦㼡㼔㼕㼞㼛㼅㼍㼚㼍㼓㼕

viii

㻣㻠

㻣㻡

㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻞㻼㻙㻟䖪䝢䝺䞁ㄏᑟయ䛸䛾┦஫స⏝䜢฼⏝䛧䛯༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾Ⓨග≉ᛶኚ໬㻣㻢㻌㻖㻌వ㻌༤㐩㻘㻌⸨䞄㇂㻌๛ᙪ㻘㻌ⓑᮌ㻌ᬛ୔㻞㻼㻙㻠㻹㼛㻻㻟㻌㻰㼛㼜㼕㼚㼓㻌㼛㼒㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㻌㼀㼛㼜㻌㻱㼘㼑㼏㼠㼞㼛㼐㼑㼟㻌㼒㼛㼞㻌㻴㼕㼓㼔㼘㼥㻌㻱㼒㼒㼕㼏㼕㼑㼚㼠㻌㻹㼑㼠㼍㼘㻙㻱㼘㼑㼏㼠㼞㼛㼐㼑㻙㻲㼞㼑㼑㻌㻼㼑㼞㼛㼢㼟㼗㼕㼠㼑㻌㻿㼛㼘㼍㼞㻌㻯㼑㼘㼘㼟䖪㻌㻖㻌㻿㼑㼡㼚㼓㼖㼡㻌㻿㼑㼛㻘㻌㻵㼘㻌㻶㼑㼛㼚㻘㻌㻷㼛㼟㼡㼗㼑㻌㻭㼗㼕㼚㼛㻘㻌㻴㼕㼞㼛㼗㼕㻌㻺㼍㼓㼍㼥㼍㻘㻌㻱㼟㼗㼛㻌㻷㼍㼡㼜㼜㼕㼚㼑㼚㻘㻌㼅㼡㼠㼍㼗㼍㻌㻹㼍㼠㼟㼡㼛㻘㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍㻞㻼㻙㻡⬡⫫㓟䛷ᐁ⬟໬䛥䜜䛯༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䜈䛾⾑Ύ䜰䝹䝤䝭䞁䛾྾╔ᣲື䛾ほᐹ䖪㻌㻖㻌୰ᮧ㻌㈼ᣅ㻘㻌᪂␃㻌჆ᙯ㻘㻌Ọ஭㻌⸅Ꮚ㻘㻌⏣୰㻌┤ᶞ㻘㻌ⓑᮌ㻌ᬛ୔㻘㻌᳃㻌೺㻘㻌∦ᒣ㻌ెᶞ㻘㻌⸨䞄㇂㻌๛ᙪ㻞㻼㻙㻢㼚㻙㼠㼥㼜㼑㻌㼐㼛㼜㼕㼚㼓㻌㼒㼞㼛㼙㻌㼟㼡㼘㼒㼔㼥㼐㼞㼥㼘㻌㼓㼞㼛㼡㼜㼟㻌㼛㼒㻌㼜㼞㼛㼠㼑㼕㼚㼟㻌㼠㼛㻌㼟㼑㼙㼕㼏㼛㼚㼐㼡㼏㼠㼕㼚㼓㻌㼟㼕㼚㼓㼘㼑㻙㼣㼍㼘㼘㻌㼏㼍㼞㼎㼛㼚㼚㼍㼚㼛㼠㼡㼎㼑

䖪㻌㻖㻌㼀㼛㼙㼛㼔㼕㼠㼛㻌㻺㼍㼗㼍㼥㼍㼙㼍㻘㻌㻴㼕㼞㼛㼠㼍㼗㼍㻌㻵㼚㼛㼡㼑㻘㻌㼅㼡㼔㼛㻌㻿㼔㼕㼓㼑㼑㼐㼍㻘㻌㼅㼍㼟㼡㼔㼕㼗㼛㻌㻴㼍㼥㼍㼟㼔㼕㻘㻌㼀㼍㼗㼑㼟㼔㼕㼀㼍㼚㼍㼗㼍㻘㻌㻭㼠㼟㼡㼟㼔㼕㻌㻴㼕㼞㼍㼚㼛㻘㻌㻹㼡㼚㼑㼍㼗㼕㻌㻴㼍㼟㼑㻞㻼㻙㻣㼀㼕㼙㼑㻙㼞㼑㼟㼛㼘㼢㼑㼐㻌㼜㼔㼛㼠㼛㼘㼡㼙㼕㼚㼑㼟㼏㼑㼚㼏㼑㻌㼟㼜㼑㼏㼠㼞㼛㼟㼏㼛㼜㼥㻌㼛㼒㻌㼑㼜㼕㼠㼍㼤㼕㼍㼘㻌㼙㼛㼚㼛㼘㼍㼥㼑㼞㻌㼍㼚㼐㻌㼎㼕㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㼛㼚㻌㻿㼕㻯

䖪㻌㻖㻌㻷㼑㼚㼟㼡㼗㼑㻌㻿㼍㼕㼠㼛㻘㻌㻶㼕㼍㼚㼒㼑㼚㼓㻌㻮㼍㼛㻘㻌㼃㼍㼠㼍㼞㼡㻌㻺㼛㼞㼕㼙㼍㼠㼟㼡㻘㻌㻹㼕㼏㼔㼕㼗㼛㻌㻷㼡㼟㼡㼚㼛㼗㼕㻘㻌㻴㼕㼐㼑㼛㻌㻷㼕㼟㼔㼕㼐㼍㻘㼀㼍㼗㼑㼟㼔㼕㻌㻷㼛㼥㼍㼙㼍㻞㻼㻙㻤䖪㻭㻌㼏㼛㼚㼠㼞㼛㼘㼘㼍㼎㼘㼑㻌㼜㼛㼟㼠㻌㼐㼛㼜㼕㼚㼓㻌㼙㼑㼠㼔㼛㼐㻌㼒㼛㼞㻌㼀㻹㻰㻌㼍㼠㼛㼙㼕㼏㻌㼘㼍㼥㼑㼞㼟㻞㻼㻙㻥䖪㻟ḟඖᵓ㐀䜢᭷䛩䜛㻺㼎㻿㼑㻞ⷧ⭷䛾㉸ఏᑟ≉ᛶ

㻣㻣

㻣㻤

㻣㻥

㻤㻜

㻤㻝

㻌㻖㻌ᮧ஭㻌㞝ஓ㻘㻌ྜྷ⏣㻌᫛஧㻘㻌๽㻌ᓽ㻘㻌ධἑ㻌ᑑྐ㻘㻌ΎỈ㻌ᏹ㻘㻌㐲⸨㻌ᑦᙪ㻘㻌ᐑ⏣㻌⪔඘㻘㻌໭ᾆ㻌Ⰻ㻤㻞㻌㻖㻌㧗ᶫ㻌⤫࿃㻘㻌Ᏻ⸨㻌༓㔛㻘㻌ᩪ⸨㻌ගྐ㻘㻌ᐑ⏣㻌⪔඘㻘㻌୰す㻌ຬ௓㻘㻌ⵦ㻌Ụ㻘㻌➉ᘏ㻌኱ᚿ䝘䝜Ⅳ⣲⢏Ꮚ
䝘䝜Ⅳ⣲⢏Ꮚ
㻞㻼㻙㻝㻜㻯㼞㼥㼟㼠㼍㼘㼘㼕㼚㼕㼠㼥㻌㼐㼑㼜㼑㼚㼐㼑㼚㼏㼑㻌㼛㼚㻌㼙㼑㼏㼔㼍㼚㼕㼏㼍㼘㻌㼜㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼍㼑㼞㼛㼓㼞㼍㼜㼔㼕㼠㼑㻌㼜㼍㼞㼠㼕㼏㼘㼑㼟㻤㻟㻌㻖㻌㻸㼕㻌㼅㼡㼑㼤㼡㼍㼚㻘㻌㻴㼍㼙㼍㼟㼍㼗㼕㻌㻴㼕㼞㼛㼙㼡㻌㻘㻌㻴㼕㼞㼍㼔㼍㼞㼍㻌㻷㼍㼛㼞㼕䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇㻞㻼㻙㻝㻝㻴㼕㼓㼔㻙㼐㼑㼚㼟㼕㼠㼥㻌㻯㻺㼀㻌㼒㼛㼞㼑㼟㼠㻌㼎㼥㻌㼙㼡㼘㼠㼕㼜㼘㼑㻌㼏㼛㼍㼠㼕㼚㼓㻌㼛㼒㻌㼕㼞㼛㼚㻌㼛㼤㼕㼐㼑㻌㼚㼍㼚㼛㻙㼏㼛㼘㼘㼛㼕㼐㻌㼒㼛㼞㻌㼐㼞㼥㻙㼟㼜㼕㼚㼚㼍㼎㼘㼑㻯㻺㼀㻌㼒㼛㼞㼑㼟㼠㻤㻠㻌㻖㻌⏣⏿㻌Ⰻ⠜㻘㻌୰㔝㻌㈗அ㻘㻌஭ୖ㻌⩼㻞㻼㻙㻝㻞䜰䝹䜹䞁䛾άᛶ໬䛸㻯㻺㼀䛾㻯㼂㻰ྜᡂ㻤㻡㻌㻖㻌㻼㼑㼚㼓㼒㼑㼕㻌㻌㻯㼔㼑㼚㻘㻌㻹㼑㼚㼓㼖㼡㻌㼅㼍㼚㼓㻘㻌㻾㼑㼕㻌㻺㼍㼗㼍㼓㼍㼣㼍㻘㻌㻴㼕㼟㼍㼟㼔㼕㻌㻿㼡㼓㼕㼙㼑㻘㻌㻴㼕㼠㼛㼟㼔㼕㻌㻹㼍㼦㼍㼗㼕㻘㻌㻿㼡㼓㼡㼞㼡㻺㼛㼐㼍䝘䝜䝏䝳䞊䝤䛾≀ᛶ䝘䝜䝏䝳䞊䝤䛾≀ᛶ㻞㻼㻙㻝㻟㻳㼞㼛㼣㼠㼔㻌㼙㼑㼏㼔㼍㼚㼕㼟㼙㻌㼛㼒㻌㼛㼚㼑㻙㼐㼕㼙㼑㼚㼟㼕㼛㼚㼍㼘㻌㼔㼑㼠㼑㼞㼛㼟㼠㼞㼡㼏㼠㼡㼞㼑㼟㻤㻢㻌㻖㻌㼅㼛㼚㼓㼖㼕㼍㻌㼆㼔㼑㼚㼓㻘㻌㼅㼍㼚㼓㻌㻽㼕㼍㼚㻘㻌㻹㼕㼚㼓㻌㻸㼕㼡㻘㻌㻭㼗㼕㼔㼕㼠㼛㻌㻷㼡㼙㼍㼙㼛㼠㼛㻘㻌㼅㼡㼕㼏㼔㼕㻌㻵㼗㼡㼔㼍㼞㼍㻘㻌㻱㼟㼗㼛㻌㻵㻚㻷㼍㼡㼜㼜㼕㼚㼑㼚㻘㻌㻿㼔㼛㼔㼑㼕㻌㻯㼔㼕㼍㼟㼔㼕㻘㻌㼀㼍㼕㼗㼕㻌㻵㼚㼛㼡㼑㻘㻌㻾㼛㼚㼓㻌㼄㼕㼍㼚㼓㻘㻌㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍㻞㻼㻙㻝㻠㧗✵㛫ศゎ㻿㻱㻹㻙㻱㻰㻿䜢⏝䛔䛯䝘䝜Ⅳ⣲ᮦᩱ䛾⾲㠃≧ែ䜲䝯䞊䝆䞁䜾ホ౯㻌㻖㻌୰ᓥ㻌⚽ᮁ㻘㻌᳃ᮏ㻌ᓫᏹ㻘㻌࿘㻌ⱥ㻘㻌ᑠᶫ㻌࿴ᩥ㻘㻌ᒣ⏣㻌೺㑻㻘㻌ᒸᓮ㻌ಇஓix㻤㻣㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻞㻼㻙㻝㻡㻲㼛㼛㼠㻌㻼㼞㼑㼟㼟㼡㼞㼑㻌㻿㼑㼚㼟㼛㼞㻌㻿㼥㼟㼠㼑㼙㻌㻹㼍㼐㼑㻌㼒㼞㼛㼙㻌㻹㼃㻯㻺㼀㻌㻯㼛㼍㼠㼑㼐㻌㻯㼛㼠㼠㼛㼚㻌㻲㼕㼎㼑㼞㼟㻌㼠㼛㻌㻹㼛㼚㼕㼠㼛㼞㻌㻴㼡㼙㼍㼚㻭㼏㼠㼕㼢㼕㼠㼕㼑㼟㻌㼍㼚㼐㻌㻿㼜㼛㼞㼠㼟㻌㻼㼑㼞㼒㼛㼞㼙㼍㼚㼏㼑㻤㻤㻌㻖㻌㻹㼐㻚㻌㻭㼎㼐㼡㼘㻌㻹㼛㼙㼕㼚㻘㻌㻹㼛㼔㼍㼙㼙㼍㼐㻌㻶㼑㼘㼘㼡㼞㻌㻾㼍㼔㼙㼍㼚㻘㻌㼀㼑㼠㼟㼡㻌㻹㼕㼑㼚㼛㻞㻼㻙㻝㻢㻟㟁ᴟᵓ㐀䜢⏝䛔䛯Ẽయᨺ㟁䛻䜘䜛䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䝣䜱䝷䝯䞁䝖⏕ᡂຠ⋡䛾ྥୖ㻤㻥㻌㻖㻌⩚ᒣ㻌ᘅ㻘㻌┾᪉㻌⥲୍㑻㻘㻌బ⸨㻌ⱥᶞ㻞㻼㻙㻝㻣㻽㼡㼍㼚㼠㼕㼠㼍㼠㼕㼢㼑㻌㼟㼠㼡㼐㼥㻌㼛㼒㻌㼟㼔㼑㼑㼠㻌㼠㼔㼑㼞㼙㼍㼘㻌㼏㼛㼚㼐㼡㼏㼠㼍㼚㼏㼑㻌㼛㼒㻌㻿㼕㼚㼓㼘㼑㻙㼃㼍㼘㼘㼑㼐㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㻌㼒㼕㼘㼙㻥㻜㻌㻖㻌㻼㼑㼚㼓㼥㼕㼚㼓㼗㼍㼕㻌㼃㼍㼚㼓㻘㻌㼅㼛㼚㼓㼖㼕㼍㻌㼆㼔㼑㼚㼓㻘㻌㼀㼍㼕㼗㼕㻌㻵㼚㼛㼡㼑㻘㻌㻾㼛㼚㼓㻌㼄㼕㼍㼚㼓㻘㻌㻿㼔㼛㼔㼑㼕㻌㻯㼔㼕㼍㼟㼔㼕㻘㻌㻹㼍㼗㼛㼠㼛㼃㼍㼠㼍㼚㼍㼎㼑㻘㻌㻿㼔㼕㼓㼑㼛㻌㻹㼍㼞㼡㼥㼍㼙㼍䜾䝷䝣䜵䞁⏕ᡂ䜾䝷䝣䜵䞁⏕ᡂ㻞㻼㻙㻝㻤㻵㼚㻙㼟㼕㼠㼡㻌㼄㻙㼞㼍㼥㻌㼐㼕㼒㼒㼞㼍㼏㼠㼕㼛㼚㻌㼙㼛㼚㼕㼠㼛㼞㻌㼛㼒㻌㼙㼡㼘㼠㼕㻙㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼜㼞㼑㼏㼕㼜㼕㼠㼍㼠㼑㼐㻌㼒㼞㼛㼙㻌㼚㼍㼚㼛㼐㼕㼍㼙㼛㼚㼐㼟㻥㻝㻌㻖㻌ᶔᑿ㻌㐩ஓ㻘㻌୰ᓥ㻌ㄹே㻘㻌ୖ⏣㻌ᝆ㈗㻘㻌୸ᒣ㻌㝯ᾈ㻘㻌ᡂሯ㻌㔜ᘺ㻞㻼㻙㻝㻥㠀◚ቯ䞉ᆒ୍䞉㐃⥆⏕⏘ྍ⬟䛺㯮㖄䝅䞊䝖䛾㟁Ẽ໬Ꮫⓗᡭἲ䛻䜘䜛ᶵ⬟໬㻥㻞㻌㻖㻌ோ⛉㻌ຬኴ㻘㻌㻯㼍㼙㼜㼑㼛㼚㻌㻮㼑㼚㼛㼕㼠㻘㻌ྂⱱ⏣㻌ᑗே䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ㻞㻼㻙㻞㻜ศᏊືຊᏛィ⟬䛻䛚䛡䜛䜾䝷䝣䜵䞁䛾㐣Ώ䝣䜷䝜䞁䝇䝨䜽䝖䝹䛻䜘䜛䝣䜷䝜䞁ᩓ஘䛾ศゎ㻥㻟㻌㻖㻌䝌䝻䝒䜻䝠䝘㻌䝍䝏䜰䝘㻘㻌እᅬ㻌⩧ᖹ㻞㻼㻙㻞㻝㻾㼍㼙㼍㼚㻌㼟㼜㼑㼏㼠㼞㼛㼟㼏㼛㼜㼥㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼛㼤㼕㼐㼑㻌㼍㼚㼐㻌㼞㼑㼐㼡㼏㼑㼐㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼛㼤㼕㼐㼑㻌㼒㼘㼍㼗㼑㼟㻌㼛㼚㻌㻿㼕㻙㼎㼍㼟㼑㼐㼟㼡㼎㼟㼠㼞㼍㼠㼑㼟㻥㻠㻌㻖㻌㻷㻚㻌㻷㼍㼚㼕㼟㼔㼗㼍㻌㻴㻚㻌㻌㻰㼑㻌㻿㼕㼘㼢㼍㻘㻌㻿㼑㼕㼥㼍㻌㻌㻿㼡㼦㼡㼗㼕㻘㻌㻼㼍㼙㼍㼞㼠㼕㻌㼂㼕㼟㼣㼍㼚㼍㼠㼔㻘㻌㻹㼍㼟㼍㼙㼕㼏㼔㼕㻌㻌㼅㼛㼟㼔㼕㼙㼡㼞㼍䜾䝷䝣䜵䞁䛾ᛂ⏝䜾䝷䝣䜵䞁䛾ᛂ⏝㻞㻼㻙㻞㻞䝬䜲䜽䝻Ἴ䝥䝷䝈䝬㻯㼂㻰ἲ䛻䜘䜛Ỉ⣲Ⓨ⏕཯ᛂ䛾䛯䜑䛾㟁Ẽゐ፹䛸䛧䛶䛾㻹㼛㻞㻯㻛㻯」ྜ⭷䛾ྜᡂ㻥㻡㻌㻖㻌἟⏣㻌㥴భ㻘㻌⥴᪉㻌ၨ඾

ཎᏊᒙ
ཎᏊᒙ
㻞㻼㻙㻞㻟

㻭㼚㼛㼙㼍㼘㼛㼡㼟㻌㼑㼘㼑㼏㼠㼞㼛㼘㼡㼙㼕㼚㼑㼟㼏㼑㼚㼏㼑㻌㻌㼒㼞㼛㼙㻌㼃㻿㻞㻛㼃㻿㼑㻞㻌㼕㼚㻙㼜㼘㼍㼚㼑㻌㼔㼑㼠㼑㼞㼛㼟㼠㼞㼡㼏㼠㼡㼞㼑㼟㻥㻢㻌㻖㻌㻺㼍㼛㼗㼕㻌㼃㼍㼐㼍㻘㻌㻶㼕㼍㼚㼓㻌㻼㼡㻘㻌㼀㼛㼙㼛㼥㼡㼗㼕㻌㼅㼍㼙㼍㼐㼍㻘㻌㼃㼑㼚㼖㼕㼚㻌㻌㼆㼔㼍㼚㼓㻘㻌㼆㼔㼑㼚㼓㻌㻌㻸㼕㼡㻘㻌㼅㼡㼟㼡㼗㼑㻺㼍㼗㼍㼚㼕㼟㼔㼕㻘㻌㼅㼡㼠㼍㼗㼍㻌㻹㼍㼚㼕㼣㼍㻘㻌㻷㼍㼦㼡㼚㼍㼞㼕㻌㻹㼍㼠㼟㼡㼐㼍㻘㻌㼅㼡㼔㼑㼕㻌㻹㼕㼥㼍㼡㼏㼔㼕㻘㻌㼀㼍㼕㼟㼔㼕㻌㼀㼍㼗㼑㼚㼛㼎㼡㻘㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍㻞㻼㻙㻞㻠㻱㼒㼒㼑㼏㼠㼟㻌㼛㼒㻌㼐㼑㼒㼑㼏㼠㻌㼒㼛㼞㼙㼍㼠㼕㼛㼚㻌㼕㼚㻌㼙㼛㼚㼛㼘㼍㼥㼑㼞㻌㻹㼛㻿㻞㻌㼎㼥㻌㼘㼛㼣㻌㼑㼚㼑㼞㼓㼥㻌㻭㼞㻗㻌㼕㼛㼚㻌㼎㼑㼍㼙㻌㼕㼞㼞㼍㼐㼕㼍㼠㼕㼛㼚㻥㻣㻌㻖㻌㼅㼍㼚㼓㼦㼔㼛㼡㻌㼆㼔㼍㼛㻘㻌㻴㼕㼞㼛㼗㼕㻌㼅㼛㼗㼛㼠㼍㻘㻌㻴㼍㼞㼡㼚㼍㻌㻵㼏㼔㼕㼗㼍㼣㼍㻘㻌㼅㼍㼟㼡㼟㼔㼕㻌㻵㼟㼔㼕㼓㼡㼞㼛㻘㻌㻷㼍㼦㼡㼥㼡㼗㼕㻌㼀㼍㼗㼍㼕䝘䝜䝽䜲䝲䞊
䝘䝜䝽䜲䝲䞊
㻞㻼㻙㻞㻡㓟໬䝙䜸䝤䝘䝜䝽䜲䝲䛾䝉䝺䞁໬䛻䜘䜛㻺㼎㻿㼑㻞䝘䝜䝽䜲䝲䛾ྜᡂ㻥㻤㻌㻖㻌⏣୰㻌ᾴ㞞㻘㻌ⶇ⏣㻌㝧ᖹ㻘㻌ᐑ⏣㻌⪔඘㻘㻌ᰗ㻌࿴ᏹ

䛭䛾௚
䛭䛾௚
㻞㻼㻙㻞㻢

㻼㼛㼘㼍㼞㼕㼦㼑㼐㻌㻾㼍㼙㼍㼚㻌㼟㼜㼑㼏㼠㼞㼍㻌㼛㼒㻌㻸㼍㻭㼘㻿㼕㻥㻥㻌㻖㻌㼀㼛㼚㼓㻌㼃㼍㼚㼓㻘㻌㼄㼕㼍㼛㼝㼕㻌㻼㼍㼚㼓㻘㻌㻺㼓㼡㼥㼑㼚㻌㼀㻚㻌㻴㼡㼚㼓㻘㻌㻾㼕㼕㼏㼔㼕㼞㼛㻌㻿㼍㼕㼠㼛㻞㻼㻙㻞㻣㻱㼘㼑㼏㼠㼞㼛㼚㼕㼏㻌㼍㼚㼐㻌㼓㼑㼛㼙㼑㼠㼞㼕㼏㻌㼟㼠㼞㼡㼏㼠㼡㼞㼑㼟㻌㼛㼒㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㻙㼎㼛㼤㼑㼟㻌㼛㼒㻌㼏㼑㼚㼠㼞㼛㼔㼑㼤㼍㼝㼡㼕㼚㼍㼚㼑㻌㻖㻌⸨஭㻌ᗣ୸㻘㻌୸ᒣ㻌ᐇ㑣㻘㻌ᒸ⏣㻌᫴x㻝㻜㻜㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻌䠕᭶㻌䠍䠓᪥㻌䠄ᮌ䠅㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻞㻜㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻞㻜㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕䚷䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕䚷㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘
ᤵ㈹ᘧ㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕䚷
ᤵ㈹ᘧ㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕䚷⥲఍㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜㻌㻕䚷⥲఍㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜㻌㻕䚷㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘୍⯡ㅮ₇㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻟㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻟㻜㻌㻕䝣䝷䞊䝺䞁䛾໬Ꮫ䝣䝷䞊䝺䞁䛾໬Ꮫ㻞㻙㻣㻯㻢㻜ศᏊ䛾㉥እศග䠖ᐇ㦂ᐊ᳨ฟ䛛䜙ᏱᐂᏑᅾᗘ䜎䛷㻞㻤㻌㻖㻌ⱝᯘ㻌▱ᡂ

䝘䝜Ⅳ⣲⢏Ꮚ
䝘䝜Ⅳ⣲⢏Ꮚ
㻞㻙㻤⇿㎘ἲ䝘䝜䝎䜲䝲䝰䞁䝗䛾୍ḟ⢏Ꮚ☜ㄆ㻞㻥㻌㻖㻌኱⃝㻌ᫎ஧㻘㻌䝞䞊䝘䞊䝗㻌䜰䝬䞁䝎䚷䠯䠊㻘㻌⏣୰㻌฼ᙪ䝣䝷䞊䝺䞁䛾ᛂ⏝䝣䝷䞊䝺䞁䛾ᛂ⏝㻞㻙㻥㻿㼠㼑㼞㼑㼛㼟㼑㼘㼑㼏㼠㼕㼢㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻌㼍㼚㼐㻌㻴㻵㼂㻛㻴㻯㼂㻌㼑㼚㼦㼥㼙㼑㻌㼕㼚㼔㼕㼎㼕㼠㼕㼛㼚㻌㼍㼏㼠㼕㼢㼕㼠㼥㻌㼛㼒㻌㼜㼞㼛㼘㼕㼚㼑㻙㼠㼥㼜㼑㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼐㼑㼞㼕㼢㼍㼠㼕㼢㼑㼟㻟㻜㻌㻖㻌∦ᓊ㻌኱⣖㻘㻌኱Ụ㻌▱அ㻘㻌㧗ᶫ㻌ᜤᏊ㻘㻌୰ᮧ㻌ᡂኵ㻘㻌ቑ㔝㻌໷ᙪ≉ูㅮ₇㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕㻞㻿㻙㻞㓟໬䜾䝷䝣䜵䞁䛾ᶵ⬟㛤ᣅ㻡㻌㻖㻌㏿Ỉ㻌┿ஓ୍⯡ㅮ₇㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻠㻡㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻠㻡㻌㻕䜾䝷䝣䜵䞁䛾ᛂ⏝䜾䝷䝣䜵䞁䛾ᛂ⏝㻞㻙㻝㻜㼀㼔㼑㻌㻱㼒㼒㼑㼏㼠㻌㼛㼒㻌㻴㼑㼠㼑㼞㼛㼍㼠㼛㼙㻌㻰㼛㼜㼑㼐㻌㻾㼑㼐㼡㼏㼑㼐㻌㻳㼞㼍㼜㼔㼑㼚㼑㻌㻻㼤㼕㼐㼑㻌㼕㼚㻌㻱㼚㼔㼍㼚㼏㼑㼙㼑㼚㼠㻌㼛㼒㼀㼔㼑㼞㼙㼛㼑㼘㼑㼏㼠㼞㼕㼏㻌㻼㼑㼞㼒㼛㼞㼙㼍㼚㼏㼑㻟㻝㻌㻖㻌㻹㼍㼞㼕㼍㼙㼡㻌㻌㻭㼘㼕㻘㻌㻹㼛㼔㼟㼑㼚㻌㻌㻷㼔㼛㼦㼍㼙㼕㻘㻌㻹㼛㼔㼟㼑㼚㻌㻌㻳㼔㼍㼘㼕㻘㻌㻺㼍㼓㼑㼔㻌㻌㻿㼔㼍㼍㼘㼍㼚㻘㻌㻷㼛㼕㼏㼔㼕㻌㻌㻺㼍㼗㼍㼙㼡㼞㼍㻘㻭㼔㼙㼑㼐㻌㻌㻭㼎㼐㻱㼘㻹㼛㼚㼑㼕㼙䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ㻞㻙㻝㻝㻹㼛㼘㼑㼏㼡㼘㼍㼞㻌㻹㼛㼐㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㻳㼞㼍㼜㼔㼑㼚㼑㻌㼛㼚㻌㻹㼑㼠㼍㼘㻌㻿㼡㼎㼟㼠㼞㼍㼠㼑㻦㻌㻱㼘㼑㼏㼠㼞㼛㼏㼔㼑㼙㼕㼏㼍㼘㻌㻰㼑㼒㼑㼏㼠㻌㻵㼚㼟㼑㼞㼠㼕㼛㼚㼍㼚㼐㻌㻱㼢㼍㼘㼡㼍㼠㼕㼛㼚㻌㼛㼒㻌㻿㼡㼞㼒㼍㼏㼑㻌㻰㼑㼒㼑㼏㼠㼟㻟㻞㻌㻖㻌㼀㼛㼙㼛㼔㼕㼞㼛㻌㻲㼡㼗㼡㼟㼔㼕㼙㼍㻘㻌㼀㼍㼗㼍㼔㼍㻌㻷㼛㼙㼍㼕㻘㻌㻷㼑㼕㻌㻹㼡㼞㼍㼗㼛㼟㼔㼕㻞㻙㻝㻞㻹㼛㼘㼑㼏㼡㼘㼍㼞㻌㻹㼛㼐㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㻳㼞㼍㼜㼔㼑㼚㼑㻌㼛㼚㻌㻹㼑㼠㼍㼘㻌㻿㼡㼎㼟㼠㼞㼍㼠㼑㻦㻌㻱㼘㼑㼏㼠㼞㼛㼏㼔㼑㼙㼕㼏㼍㼘㻌㻰㼑㼒㼑㼏㼠㻌㻵㼚㼟㼑㼞㼠㼕㼛㼚㼒㼛㼞㻌㻯㼛㼚㼠㼞㼛㼘㼘㼑㼐㻌㻼㼞㼛㼠㼛㼚㻌㻼㼑㼞㼙㼑㼍㼠㼕㼛㼚㻌㻖㻌㼀㼍㼗㼍㼔㼍㻌㻷㼛㼙㼍㼕㻘㻌㼀㼛㼙㼛㼔㼕㼞㼛㻌㻲㼡㼗㼡㼟㼔㼕㼙㼍㻘㻌㻷㼑㼕㻌㻹㼡㼞㼍㼗㼛㼟㼔㼕xi㻟㻟㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅㻌≉ูㅮ₇䚷䚷䚷Ⓨ⾲㻌䠎䠑ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌≉ูㅮ₇䚷䚷䚷Ⓨ⾲㻌䠎䠑ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌୍⯡ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌୍⯡ㅮ₇䚷䚷䚷Ⓨ⾲㻌䠍䠌ศ䚷䞉䚷㉁␲ᛂ⟅㻌䠑ศ㻌䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷䚷䚷Ⓨ⾲㻌䠍ศ䚷䞉䚷㉁␲ᛂ⟅㻌䛺䛧㻌䝫䝇䝍䞊䝥䝺䝡䝳䞊䚷䚷䚷Ⓨ⾲㻌䠍ศ䚷䞉䚷㉁␲ᛂ⟅㻌䛺䛧≉ูㅮ₇㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕㻟㻿㻙㻝⇞ᩱ㟁ụ⏝❅⣲䝗䞊䝥䜹䞊䝪䞁ゐ፹䛾άᛶⅬ㻢㻌㻖㻌୰ᮧ㻌₶ඣ୍⯡ㅮ₇㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻟㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻟㻜㻌㻕
ཎᏊᒙ
ཎᏊᒙ
㻟㻙㻝

㻞㻰㻌㼠㼕㼚㻌㼘㼍㼥㼑㼞㼟㻌㼛㼚㻌㻿㼕㻯㻔㻜㻜㻜㻝㻕㻟㻠㻌㻖㻌㻭㼚㼠㼛㼚㻌㼂㼕㼟㼕㼗㼛㼢㼟㼗㼕㼥㻘㻌Ᏻ⸨㻌ᐶ㻘㻌ᯘ㻌┿࿃㻘㻌ᑠ᳃㻌ᩥኵ㻘㻌▮἞㻌ග୍㑻㻘㻌⏣୰㻌ᝅ
㻟㻙㻞

㻟㻙㻟

㻿㼠㼞㼍㼕㼚㻌㼑㼒㼒㼑㼏㼠㻌㼛㼚㻌㼏㼕㼞㼏㼡㼘㼍㼞㼘㼥㻙㼜㼛㼘㼍㼞㼕㼦㼑㼐㻌㼑㼘㼑㼏㼠㼞㼛㼘㼡㼙㼕㼚㼑㼟㼏㼑㼚㼏㼑㻌㼕㼚㻌㼠㼞㼍㼚㼟㼕㼠㼕㼛㼚㻌㼙㼑㼠㼍㼘㻌㼐㼕㼏㼔㼍㼘㼏㼛㼓㼑㼚㼕㼐㼑㼟㻟㻡㻻㼜㼑㼞㼍㼚㼐㼛㻌㼑㼘㼑㼏㼠㼞㼕㼏㼍㼘㻌㼏㼔㼍㼞㼍㼏㼠㼑㼞㼕㼦㼍㼠㼕㼛㼚㻌㼛㼒㻌㼙㼑㼠㼔㼍㼚㼑㻌㼛㼤㼕㼐㼍㼠㼕㼛㼚㻌㼣㼕㼠㼔㻌㼍㼠㼛㼙㼕㼏㼍㼘㼘㼥㻌㼠㼔㼕㼚㻌㼒㼕㼘㼙㼟㻌㼛㼒㻌㻵㼞㻻㻞㼚㼍㼚㼛㼟㼔㼑㼑㼠㼟㻟㻢㻌㻖㻌ứ㻌 吏 ඞ㻘㻘㻌㰻⸨㻌⌮୍㑻㻌㻖㻌㔝ෆ㻌ு㻘㻌▼ཎ㻌Ⰻ᫭㻘㻌ᮡᮏ㻌΅㻟㻙㻠㻱㼘㼑㼏㼠㼞㼕㼏㼍㼘㻌㼏㼛㼚㼠㼞㼛㼘㻌㼛㼒㻌㼞㼑㼟㼛㼚㼍㼚㼏㼑㻌㼒㼞㼑㼝㼡㼑㼚㼏㼥㻌㼒㼛㼞㻌㼐㼞㼡㼙㻙㼠㼥㼜㼑㻌㼔㻮㻺㻌㼚㼍㼚㼛㻙㼑㼘㼑㼏㼠㼞㼛㻙㼙㼑㼏㼔㼍㼚㼕㼏㼍㼘㼞㼑㼟㼛㼚㼍㼠㼛㼞㻌㼣㼕㼠㼔㻌㼜㼔㼛㼠㼛㼠㼔㼑㼞㼙㼍㼘㻌㼍㼏㼠㼡㼍㼠㼕㼛㼚㻟㻣㻌㻖㻌㼅㼡㼟㼡㼗㼑㻌㻹㼛㼞㼕㼙㼛㼠㼛㻘㻌㻷㼡㼚㼕㼔㼍㼞㼡㻌㼀㼍㼗㼑㼕㻘㻌㼀㼍㼗㼍㼥㼡㼗㼕㻌㻭㼞㼕㼑㻘㻌㻿㼑㼕㼖㼕㻌㻭㼗㼕㼠㼍㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘୍⯡ㅮ₇㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻝㻡㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻝㻡㻌㻕䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻟㻙㻡㻼㼞㼛㼙㼕㼟㼕㼚㼓㻌㼚㼑㼤㼠㻙㼓㼑㼚㻌㻯㼡㻙㼟㼡㼎㼟㼠㼕㼠㼡㼠㼑㼟㻦㻌㻸㼕㼓㼔㼠㼣㼑㼕㼓㼔㼠㻌㻯㼡㻛㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㻌㻯㼛㼙㼜㼛㼟㼕㼠㼑㻌㻱㼘㼑㼏㼠㼞㼕㼏㻯㼛㼚㼐㼡㼏㼠㼛㼞㼟㻟㻤㻌㻖㻌㻾㼍㼖㼥㼍㼟㼔㼞㼑㼑㻌㻿㼡㼚㼐㼍㼞㼍㼙㻘㻌㻳㼡㼛㼔㼍㼕㻌㻯㼔㼑㼚㻘㻌㼀㼍㼗㼑㼛㻌㼅㼍㼙㼍㼐㼍㻘㻌㻰㼛㼚㻌㻲㼡㼠㼍㼎㼍㻘㻌㻷㼑㼚㼖㼕㻌㻴㼍㼠㼍㻘㻌㻷㼑㼚㻷㼛㼗㼡㼎㼛㻘㻌㻭㼠㼟㼡㼗㼛㻌㻿㼑㼗㼕㼓㼡㼏㼔㼕㻟㻙㻢㻭㼚㼠㼔㼞㼍㼏㼑㼚㼑㻙㼍㼟㼟㼕㼟㼠㼑㼐㻌㼐㼑㼠㼑㼞㼙㼕㼚㼕㼟㼠㼕㼏㻌㼠㼞㼍㼚㼟㼒㼑㼞㻌㼛㼒㻌㼛㼜㼠㼕㼏㼍㼘㻙㼝㼡㼍㼘㼕㼠㼥㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻟㻥㻌㻖㻌኱ሯ㻌៞࿃㻘㻌ຍ⸨㻌㞝୍㑻䝫䝇䝍䞊䝥䝺䝡䝳䞊㻌㻌㻔㻌㻝㻝㻦㻝㻡㻙㻝㻞㻦㻜㻜㻌㻕䚷䚷㻌䚷䠄䖪䠅䚷ⱝᡭዡບ㈹ೃ⿵
䝫䝇䝍䞊䝥䝺䝡䝳䞊㻌㻌㻔㻌㻝㻝㻦㻝㻡㻙㻝㻞㻦㻜㻜㻌㻕䚷䚷㻌䚷䠄䖪䠅䚷ⱝᡭዡບ㈹ೃ⿵
ⱝᡭዡບ㈹ೃ⿵
ⱝᡭዡບ㈹ೃ⿵㻟㻼㻙㻝䖪྾╔➼ ⥺ ᐃ䛻䜘䜛Ⅳ⣲ᮦᩱ⾲㠃䛻䛚䛡䜛䝫䝸䝧䞁䝌䜲䝭䝎䝌䞊䝹྾╔≧ែ䛾ゎ᫂㻟㻼㻙㻞䖪㼁㼚㼐㼑㼞㼟㼠㼍㼚㼐㼕㼚㼓㻌㼠㼔㼑㻌㻱㼒㼒㼑㼏㼠㻌㼛㼒㻌㻿㼡㼘㼒㼡㼞㻌㼛㼚㻌㼠㼔㼑㻌㻿㼥㼚㼠㼔㼑㼟㼕㼟㻌㼛㼒㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㼟㻟㻼㻙㻟䖪㻰㼕㼞㼑㼏㼠㼕㼛㼚㼍㼘㻌㼑㼤㼏㼕㼠㼛㼚㻌㼐㼕㼒㼒㼡㼟㼕㼛㼚㻌㼕㼚㻌㼜㼑㼚㼠㼍㼏㼑㼚㼑㻙㼐㼑㼏㼛㼞㼍㼠㼑㼐㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻟㻼㻙㻠䖪䜰䝆䝗໬ྜ≀䜢฼⏝䛧䛯ᒁᡤ໬Ꮫಟ㣭༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾ྜᡂ䛸Ⓨග≉ᛶ㻝㻜㻝㻌㻖㻌჆㝧㻌ዉ䚻㻘㻌⸨䞄㇂㻌๛ᙪ㻝㻜㻞㻌㻖㻌௰ᕝ㻌㯪㻘㻌Ụᡞ㻌೔Ꮚ㻘㻌ᮡ┠㻌ᜏᚿ㻘㻌㔝⏣㻌ඃ㻝㻜㻟㻌㻖㻌ᮤ㻌⮺㻘㻌኱ሯ㻌៞࿃㻘㻌ᒣୗ㻌኱႐㻘㻌ຍ⸨㻌㞝୍㑻㻌㻖㻌ᯘ㻌ၨኴ㻘㻌⸨䞄㇂㻌๛ᙪ㻘㻌ⓑᮌ㻌ᬛ୔

xii

㻝㻜㻠

㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅㻟㻼㻙㻡㼀㼑㼙㼜㼑㼞㼍㼠㼡㼞㼑㻌㼐㼑㼜㼑㼚㼐㼑㼚㼏㼑㻌㼛㼒㻌㻾㼍㼙㼍㼚㻌㻳㻙㼎㼍㼚㼐㻌㼟㼔㼕㼒㼠㻌㼕㼚㻌㼐㼑㼒㼑㼏㼠㼕㼢㼑㻌㼟㼕㼚㼓㼘㼑㻙㼣㼍㼘㼘㼑㼐㻌㼏㼍㼞㼎㼛㼚㼚㼍㼚㼛㼠㼡㼎㼑㼟䖪㻌㻖㻌㐲⸨㻌㞞඾㻘㻌ෆᒣ㻌ᬕ㈗㻘㻌኱㔝㻌㞝㧗㻘㻌ᘅ㇂㻌₶㻟㻼㻙㻢䖪⵨╔䛻䜘䜛༢ᒙ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䝅䞊䝖䛾㼚ᆺ໬㻟㻼㻙㻣䖪㻳㼞㼛㼣㼠㼔㻌㼛㼒㻌㻹㼛㼚㼛㼘㼍㼥㼑㼞㻌㻹㼛㻿㻞㻌㻸㼍㼠㼑㼞㼍㼘㻌㼜䇵㼚㻌㻶㼡㼚㼏㼠㼕㼛㼚㻌㼣㼕㼠㼔㻌㼜㻙㼠㼥㼜㼑㻌㻿㼡㼎㼟㼠㼕㼠㼡㼠㼕㼛㼚㼍㼘㻌㻺㼎㻌㻰㼛㼜㼕㼚㼓㻟㻼㻙㻤䖪␗᪉ᛶ䛾䛒䜛ගᏛⓗ䞉㟁Ꮚⓗ≉ᛶ䜢䜒䛴஧ḟඖ䝅䝸䝁䞁䝣䜷䝇䝣䜯䜲䝗㻟㻼㻙㻥㼃㼀㼑䝘䝜䝽䜲䝲䝛䝑䝖䝽䞊䜽䛾㟁Ꮚ㍺㏦≉ᛶ䖪㻌㻖㻌㻴㼕㼞㼛㼟㼔㼕㻌㻿㼔㼕㼙㼕㼦㼡㻘㻌㻶㼕㼍㼚㼓㻌㻼㼡㻘㻌㻴㼛㼚㼓㻌㻱㼚㻌㻸㼕㼙㻘㻌㼅㼡㼟㼡㼗㼑㻌㻺㼍㼗㼍㼚㼕㼟㼔㼕㻘㻌㼆㼔㼑㼚㼓㻌㻸㼕㼡㻘㻌㼀㼍㼗㼍㼔㼕㼗㼛㻌㻱㼚㼐㼛㻘㼀㼍㼕㼟㼔㼕㻌㼀㼍㼗㼑㼚㼛㼎㼡㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍

㻝㻜㻡

㻝㻜㻢

㻌㻖㻌ᒣཱྀ㻌෽ᖹ㻘㻌⧊⏣㻌ᾏᩯ㻘㻌ᐩ⏣㻌ᇶ⿱㻘㻌Ώ㑓㻌Ꮥಙ㻘㻌⸨䞄㇂㻌๛ᙪ㻝㻜㻣㻌㻖㻌ᒸ⏣㻌ග༤㻘㻌ධἑ㻌ᑑྐ㻘㻌ᒸ⏣㻌┤ஓ㻘㻌ᙇ㻌ᩥ㤾㻘㻌ΎỈ㻌ဴኵ㻘㻌ஂಖ㻌฼㝯㻘㻌▼ཎ㻌ṇ⤫㻝㻜㻤㻌㻖㻌ᑠᯘ㻌ᖿ᪲㻘㻌⠛໭㻌ၨ௓㻘㻌ᐑෆ㻌㞝ᖹ㻘㻌ᯇ⏣㻌୍ᡂ㻝㻜㻥䝣䝷䞊䝺䞁䛾ᛂ⏝䝣䝷䞊䝺䞁䛾ᛂ⏝㻟㻼㻙㻝㻜㻼㼞㼑㼜㼍㼞㼍㼠㼕㼛㼚㻌㼛㼒㻌㼞㼡㼠㼔㼑㼚㼕㼡㼙㻌㼛㼤㼕㼐㼑㻙㼇㻯㻢㻜㼉㼒㼡㼘㼘㼑㼞㼑㼚㼑㻌㼚㼍㼚㼛㼣㼔㼕㼟㼗㼑㼞㻌㼏㼛㼙㼜㼛㼟㼕㼠㼑㼟㻌㼍㼚㼐㻌㼠㼔㼑㼕㼞㼜㼔㼛㼠㼛㼏㼍㼠㼍㼘㼥㼠㼕㼏㻌㼍㼏㼠㼕㼢㼕㼠㼥㻌㼒㼛㼞㻌㼐㼑㼓㼞㼍㼐㼍㼠㼕㼛㼚㻌㼛㼒㻌㼍㼦㼛㻌㼐㼥㼑㼟㻝㻝㻜㻌㻖㻌㻶㼑㼛㼚㼓㻌㼃㼛㼚㻌㻷㼛㻘㻌㻿㼡㼓㼥㼑㼛㼚㼓㻌㻌㻶㼑㼛㼚㻘㻌㼃㼑㼛㼚㻌㻮㼍㼑㻌㻌㻷㼛䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻟㻼㻙㻝㻝㻯㻺㼀㻛㼏㼛㼜㼜㼑㼞㻌㼏㼛㼙㼜㼛㼟㼕㼠㼑㻌㼥㼍㼞㼚㻌㼙㼍㼐㼑㻌㼒㼞㼛㼙㻌㼙㼑㼠㼍㼘㼘㼕㼏㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㻙㼐㼑㼏㼛㼞㼍㼠㼑㼐㻌㻌㼟㼜㼕㼚㻙㼏㼍㼜㼍㼎㼘㼑㻌㻯㻺㼀㻝㻝㻝㼒㼛㼞㼑㼟㼠

㻌㻖㻌⏣୰㻌Ꮥ♸㻘㻌୰㔝㻌㈗அ㻘㻌஭ୖ㻌⩼䝘䝜䝏䝳䞊䝤䛾≀ᛶ䝘䝜䝏䝳䞊䝤䛾≀ᛶ㻟㻼㻙㻝㻞㼔㻙㻮㻺ୖ䜈䛾䜺䝇㓄ྥᡂ㛗㻯㻺㼀䛾䝷䝬䞁ศගᐃ㻝㻝㻞㻌㻖㻌బ⸨㻌࿘㻘㻌ᅄඖ㻌⪽㻘㻌␒ሙ㻌㞞඾㻘㻌஭䝜ୖ㻌Ὀ㍤㻘㻌୸ᒣ㻌ⱱኵ㻘㻌༓㊊㻌᪼ᖹ㻟㻼㻙㻝㻟㻲㼑㼞㼙㼕㻙㼘㼑㼢㼑㼘㻌㼐㼑㼜㼑㼚㼐㼑㼚㼏㼑㻌㼛㼒㻌㼔㼕㼓㼔㻙㼔㼍㼞㼙㼛㼚㼕㼏㻌㼓㼑㼚㼑㼞㼍㼠㼕㼛㼚㻌㼕㼚㻌㼟㼑㼙㼕㼏㼛㼚㼐㼡㼏㼠㼕㼚㼓㻌㼟㼕㼚㼓㼘㼑㻙㼣㼍㼘㼘㼑㼐㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻌㼣㼕㼠㼔㻌㼐㼕㼒㼒㼑㼞㼑㼚㼠㻌㼎㼍㼚㼐㼓㼍㼜㼟㻝㻝㻟㻌㻖㻌す␃㻌ẚ࿅ᖾ㻘㻌Ọ஭㻌ᜏᖹ㻘㻌ෆ⏣㻌೺ே㻘㻌୍䝜℩㻌㐶ኴ㻘㻌ᯞ㻌῟Ꮚ㻘㻌኱ஂಖ㻌▖㻘㻌ⶇ⏣㻌㝧ᖹ㻘㻌⏣୰㻌⪔୍㑻㻘㻌ᰗ㻌࿴ᏹ䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻟㻼㻙㻝㻠Ⅳ⣲ᮦᩱୖ䛻䛚䛡䜛㻼㼠䝘䝜⢏Ꮚ䛾≧ែ䛸䝯䝍䝜䞊䝹㓟໬䛻ᑐ䛩䜛㟁ᴟゐ፹≉ᛶ䛻ཬ䜌䛩ሁ
✚ἲ䛾ᙳ㡪

㻝㻝㻠

㻌㻖㻌㜿㒊㻌㞝ᕹ㻘㻌⥴᪉㻌ၨ඾㻟㻼㻙㻝㻡㻲㻠㻙㼀㻯㻺㻽㻌㼂㼍㼜㼛㼞㻙㼐㼛㼜㼑㼐㻌㻿㼕㼚㼓㼘㼑㻌㼃㼍㼘㼘㼑㼐㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㼟㻌㼒㼛㼞㻌㼀㼔㼑㼞㼙㼛㼑㼘㼑㼏㼠㼞㼕㼏㻌㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻝㻝㻡㻌㻖㻌㻹㼍㼞㼕㼍㼙㼡㻌㻭㼘㼕㻘㻌㻺㼍㼛㼒㼡㼙㼕㻌㻌㻻㼗㼍㼙㼛㼠㼛㻘㻌㻾㼥㼛㻌㻌㻭㼎㼑㻘㻌㻭㼔㼙㼑㼐㻌㻌㻭㼎㼐㼑㼘㻹㼛㼚㼑㼕㼙㻘㻌㻹㼍㼟㼍㼗㼍㼦㼡㻌㻌㻺㼍㼗㼍㼙㼡㼞㼍㻟㻼㻙㻝㻢㻻㼜㼑㼞㼍㼠㼕㼛㼚㻌㼟㼜㼑㼑㼐㻌㼑㼚㼔㼍㼚㼏㼑㼙㼑㼚㼠㻌㼕㼚㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㻌㼠㼔㼕㼚㻌㼒㼕㼘㼙㻌㼠㼞㼍㼚㼟㼕㼟㼠㼛㼞㼟㻌㼎㼥㻌㼟㼑㼘㼒㻙㼍㼘㼕㼓㼚㼑㼐㼜㼞㼛㼏㼑㼟㼟

㻝㻝㻢㻌㻖㻌㻿㼍㼥㼍㻌㻵㼟㼔㼕㼙㼍㼞㼡㻘㻌㼀㼍㼕㼓㼍㻌㻷㼍㼟㼔㼕㼙㼍㻘㻌㻴㼕㼞㼛㼙㼕㼏㼔㼕㻌㻷㼍㼠㼍㼡㼞㼍㻘㻌㼅㼡㼍㼗㼍㻌㻻㼔㼚㼛㻟㻼㻙㻝㻣㻾㼍㼐㼕㼏㼍㼘㻌㼜㼛㼘㼥㼙㼑㼞㼕㼦㼍㼠㼕㼛㼚㻌㼕㼚㻌㼠㼔㼑㻌㼜㼞㼑㼟㼑㼚㼏㼑㻌㼛㼒㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻌㻔㻯㻺㼀㼟㻕㻦㻌㻾㼍㼐㼕㼏㼍㼘㻌㼟㼏㼍㼢㼑㼚㼓㼕㼚㼓㻌㼎㼥㻯㻺㼀㼟㻌㻖㻌ΎỈ㻌ኴ㝧㻘㻌ᓊ㻌Ⰻ୍㻘㻌ᒣ⏣㻌೺㑻㻘㻌␊㻌㈼἞

xiii

㻝㻝㻣

㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅䜾䝷䝣䜵䞁⏕ᡂ䜾䝷䝣䜵䞁⏕ᡂ㻟㻼㻙㻝㻤㻱㼒㼒㼑㼏㼠㻌㼛㼒㻌㻯㼔㼑㼙㼕㼏㼍㼘㻌㻱㼠㼏㼔㼕㼚㼓㻌㼀㼞㼑㼍㼠㼙㼑㼚㼠㻌㼛㼚㻌㻯㼛㼜㼜㼑㼞㻌㻲㼛㼕㼘㼟㻌㼒㼛㼞㻌㻿㼕㼚㼓㼘㼑㻙㻸㼍㼥㼑㼞㻌㻳㼞㼍㼜㼔㼑㼚㼑㻌㻯㼂㻰㻳㼞㼛㼣㼠㼔

㻝㻝㻤㻌㻖㻌㻺㼍㼛㼗㼕㻌㼅㼛㼟㼔㼕㼔㼍㼞㼍㻘㻌㻹㼍㼟㼍㼞㼡㻌㻺㼛㼐㼍䜾䝷䝣䜵䞁䛾≀ᛶ䜾䝷䝣䜵䞁䛾≀ᛶ㻟㻼㻙㻝㻥㼀㼔㼑㼞㼙㼍㼘㻌㼠㼞㼍㼚㼟㼜㼛㼞㼠㻌㼜㼞㼛㼜㼑㼞㼠㼥㻌㼛㼒㻌㼟㼡㼟㼜㼑㼚㼐㼑㼐㻌㼠㼣㼕㼟㼠㼑㼐㻌㼎㼕㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻝㻝㻥㻌㻖㻌ᅵ஭㻌ᝡኴ㑻㻘㻌ẟ฼㻌┿୍㑻㻘㻌Ⲩᮌ㻌ດ㻟㻼㻙㻞㻜㻯㼍㼞㼞㼕㼑㼞㻌㼏㼛㼚㼠㼞㼛㼘㻌㼕㼚㻌㼎㼕㼘㼍㼥㼑㼞㻌㼓㼞㼍㼜㼔㼑㼚㼑㻌㼐㼡㼍㼘㻙㼓㼍㼠㼑㻌㼒㼕㼑㼘㼐㻌㼑㼒㼒㼑㼏㼠㻌㼠㼞㼍㼚㼟㼕㼟㼠㼛㼞㼟㻌㼎㼥㻌㼕㼚㼠㼑㼞㼘㼍㼥㼑㼞㻌㼍㼠㼛㼙㼕㼏㼍㼞㼞㼍㼚㼓㼑㼙㼑㼚㼠㻝㻞㻜㻌㻖㻌㧗㻌⇩ᯘ㻘㻌ᒸ⏣㻌᫴䜾䝷䝣䜵䞁䛾ᛂ⏝䜾䝷䝣䜵䞁䛾ᛂ⏝㻟㻼㻙㻞㻝㻰㼕㼒㼒㼑㼞㼑㼚㼏㼑㻌㼛㼒㻌㼒㼡㼚㼏㼠㼕㼛㼚㼍㼘㻌㼓㼞㼛㼡㼜㼟㻌㼕㼚㻌㻳㼞㼍㼜㼔㼑㼚㼑㻌㼛㼤㼕㼐㼑㻌㼕㼚㻌㼠㼑㼞㼙㼟㻌㼛㼒㻌㼏㼔㼑㼙㼕㼏㼍㼘㻌㼍㼏㼠㼕㼢㼕㼠㼥㻝㻞㻝㻌㻖㻌㏆⸨㻌㔛㥑㻘㻌ᯇᑿ㻌ྜྷ᫭㻘㻌㧗஭㻌࿴அ

ཎᏊᒙ㻌
ཎᏊᒙ㻌
㻟㻼㻙㻞㻞

䝘䝜䝇䜿䞊䝹஧ḟඖ㉸ᵓ㐀䛾䝔䞊䝷䞊䝯䜲䝗๰ฟ㻝㻞㻞㻌㻖㻌୍℩㻌୐ᾏ㻘㻌㷛⏣㻌ᬛኈ㻘㻌๽㻌ᓽ㻘㻌໭ᾆ㻌Ⰻ㻟㻼㻙㻞㻟㻯㼔㼑㼙㼕㼏㼍㼘㼘㼥㻌㼠㼡㼚㼑㼐㻌㼜㻙㻌㼍㼚㼐㻌㼚㻙㼠㼥㼜㼑㻌㼃㻿㼑㻞㻌㼙㼛㼚㼛㼘㼍㼥㼑㼞㼟㻌㼣㼕㼠㼔㻌㼕㼙㼜㼞㼛㼢㼑㼐㻌㼏㼍㼞㼞㼕㼑㼞㻌㼙㼛㼎㼕㼘㼕㼠㼥㻌㼒㼛㼞㼑㼘㼑㼏㼠㼞㼛㼚㼕㼏㻌㼍㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻝㻞㻟㻌㻖㻌㻴㼥㼡㼚㻌㻳㼛㼛㻌㻶㼕㻘㻌㻼㼍㼎㼘㼛㻌㻿㼛㼘㽸㼟㻙㻲㼑㼞㼚㽬㼚㼐㼑㼦㻘㻌㻰㼍㼕㼟㼡㼗㼑㻌㼅㼛㼟㼔㼕㼙㼡㼞㼍㻘㻌㻹㼕㼚㼍㻌㻹㼍㼞㼡㼥㼍㼙㼍㻘㻌㼀㼍㼗㼍㼔㼕㼗㼛㻱㼚㼐㼛㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍㻘㻌㻿㼡㼟㼡㼙㼡㻌㻻㼗㼍㼐㼍㻘㻌㻴㼕㼞㼛㼗㼕㻌㻭㼓㼛䝘䝜䝽䜲䝲䞊
䝘䝜䝽䜲䝲䞊
㻟㻼㻙㻞㻠㻱㼘㼑㼏㼠㼞㼕㼏㼍㼘㻌㻯㼛㼚㼐㼡㼏㼠㼕㼢㼕㼠㼥㻌㼛㼒㻌㻯㼔㼑㼙㼕㼏㼍㼘㻙㼂㼍㼜㼛㼞㻙㻰㼑㼜㼛㼟㼕㼠㼕㼛㼚㻌㻳㼞㼛㼣㼚㻌㻌㼃㼀㼑㻌㻺㼍㼚㼛㼣㼕㼞㼑㻌㻮㼡㼚㼐㼘㼑㼟㻝㻞㻠㻌㻖㻌㻯㼔㼕㼟㼍㼠㼛㻌㻭㼚㼐㼛㻘㻌㼅㼡㼟㼡㼗㼑㻌㻺㼍㼗㼍㼚㼕㼟㼔㼕㻘㻌㻴㼕㼞㼛㼟㼔㼕㻌㻿㼔㼕㼙㼕㼦㼡㻘㻌㻴㼛㼚㼓㻌㻱㼚㻌㻸㼕㼙㻘㻌㼆㼔㼑㼚㼓㻌㻸㼕㼡㻘㻌㼀㼍㼗㼍㼔㼕㼗㼛㻱㼚㼐㼛㻘㻌㼅㼍㼟㼡㼙㼕㼠㼟㼡㻌㻹㼕㼥㼍㼠㼍

䛭䛾௚
䛭䛾௚
㻟㻼㻙㻞㻡

㻲㼕㼞㼟㼠㻙㼜㼞㼕㼚㼏㼕㼜㼘㼑㻌㼏㼍㼘㼏㼡㼘㼍㼠㼕㼛㼚㻌㼛㼒㻌㼠㼔㼑㻌㼑㼘㼑㼏㼠㼞㼛㼚㼕㼏㻌㼟㼠㼍㼠㼑㻌㼛㼒㻌㼍㻌㻞㻰㻌㼏㼛㼢㼍㼘㼑㼚㼠㻌㼚㼑㼠㼣㼛㼞㼗㻌㼛㼒㻌㻝㻘㻟㻘㻡㻙㼠㼞㼕㼍㼙㼕㼚㼛㻝㻞㻡㼎㼑㼚㼦㼑㼚㼑㻌㼍㼚㼐㻌㼎㼑㼚㼦㼑㼚㼑㻙㻝㻘㻟㻘㻡㻙㼠㼞㼕㼏㼍㼞㼎㼛㼤㼍㼘㼐㼑㼔㼥㼐㼑㻌㻖㻌㻴㼕㼞㼛㼥㼡㼗㼕㻌㼅㼛㼗㼛㼕㻟㻼㻙㻞㻢㼀㼣㼛㻙㼏㼔㼍㼚㼚㼑㼘㻌㼙㼛㼐㼑㼘㻌㼒㼛㼞㻌㼘㼛㼣㻌㼠㼔㼑㼞㼙㼍㼘㻌㼏㼛㼚㼐㼡㼏㼠㼕㼢㼕㼠㼥㻌㼛㼒㻌㻹㼓㻟㻮㼕㻞㻝㻞㻢㻌㻖㻌㻺㼓㼡㼥㼑㼚㻌㼀㼡㼍㼚㻌㻴㼡㼚㼓㻘㻌㻾㼕㼕㼏㼔㼕㼞㼛㻌㻿㼍㼕㼠㼛㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻜㻜㻙㻝㻟㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌᫨㣗㻌㻌㻔㻌㻝㻞㻦㻜㻜㻙㻝㻟㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻜㻜㻙㻝㻠㻦㻠㻡㻌㻕䚷䝫䝇䝍䞊䝉䝑䝅䝵䞁㻌㻌㻔㻌㻝㻟㻦㻜㻜㻙㻝㻠㻦㻠㻡㻌㻕䚷㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻠㻦㻠㻡㻙㻝㻡㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻠㻦㻠㻡㻙㻝㻡㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘≉ูㅮ₇㻌㻌㻔㻌㻝㻡㻦㻜㻜㻙㻝㻡㻦㻟㻜㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻝㻡㻦㻜㻜㻙㻝㻡㻦㻟㻜㻌㻕㻟㻿㻙㻞ከᒙ䜾䝷䝣䜵䞁䛾㟁Ꮚᵓ㐀㻣㻌㻖㻌ඵᮌ㻌㝯ከxiv㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅㻌䠕᭶㻌䠍䠔᪥㻌䠄㔠䠅୍⯡ㅮ₇㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻟㻜㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻟㻜㻌㻕䝘䝜䝏䝳䞊䝤䛾≀ᛶ䝘䝜䝏䝳䞊䝤䛾≀ᛶ㻟㻙㻣䝗䞊䝥䛧䛯䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛻䛚䛡䜛෇೫ග஧Ⰽᛶ

㻠㻜㻌㻖㻌㰻⸨㻌⌮୍㑻㻘㻌㼁㼗㼔㼠㼍㼞㼥㻌㻹㼐㻚㻌㻿㼔㼛㼡㼒㼕㼑㻘㻌㼃㼍㼚㼓㻌㻿㼍㼗㼑㻘㻌๓⏣㻌኱⪷㻘㻌ᒾᓮ㻌భဢ㻟㻙㻤༢୍ᵓ㐀䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤ⷧ⭷䛾ᗈᖏᇦ」⣲ᒅᢡ⋡䝇䝨䜽䝖䝹㻠㻝㻌㻖㻌すཎ㻌኱ᚿ㻘㻌㧘಴㻌❶㻘㻌ᯇ⏣㻌୍ᡂ㻘㻌⏣୰㻌୔ኈ㻘㻌∦ᾆ㻌ᘯ㐨㻘㻌ᐑෆ㻌㞝ᖹ㻟㻙㻥㼁㼚㼞㼍㼢㼑㼘㼘㼕㼚㼓㻌㼠㼔㼑㻌㼀㼔㼑㼞㼙㼍㼘㻌㻯㼛㼚㼐㼡㼏㼠㼕㼢㼕㼠㼥㻌㼛㼒㻌㻿㼑㼙㼕㼏㼛㼚㼐㼡㼏㼠㼕㼚㼓㻌㻯㼍㼞㼎㼛㼚㻌㻺㼍㼚㼛㼠㼡㼎㼑㼟㻌㻲㼕㼘㼙㻌㼣㼕㼠㼔㻰㼕㼒㼒㼑㼞㼑㼚㼠㻌㻰㼛㼜㼕㼚㼓㻌㻸㼑㼢㼑㼘㼟㻠㻞㻌㻖㻌ୖ἞㻌ᐶ㻘㻌ᯇᒸ㻌ຬஓ㻘㻌ඵᮌ㻌㈗ᚿ㻘㻌ⶇ⏣㻌㝧ᖹ㻘㻌୍䝜℩㻌㐶ኴ㻘㻌ྜྷ⏣㻌ᮒ㔛㻘㻌ᰗ㻌࿴ᏹ䝘䝜䝏䝳䞊䝤䛾ᛂ⏝䝘䝜䝏䝳䞊䝤䛾ᛂ⏝㻟㻙㻝㻜䝪䝸䝹䝷䝆䜹䝹䛻䜘䜛䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾㟁Ꮚ䝗䞊䝢䞁䜾㻠㻟㻌㻖㻌⏣୰㻌┤ᶞ㻘㻌὾◁㻌☐㻘㻌⸨䞄㇂㻌๛ᙪ㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌ఇ᠁㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘≉ูㅮ₇㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻝㻡㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻝㻡㻌㻕㻟㻿㻙㻟ᑟ㟁ᛶ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䝁䞊䝖㻼㻱㼀䝔䞊䝥䛻஌䛫䛯⚄⤒⤌⧊䛾㧗ゎീᗘ㟁Ꮚ㢧ᚤ㙾᧜ᙳ䛸䛭䛾ゎᯒἲ

㻤㻌㻖㻌❑⏣㻌ⰾஅ୍⯡ㅮ₇㻌㻌㻔㻌㻝㻣㻦㻝㻡㻙㻝㻣㻦㻠㻡㻌㻕୍⯡ㅮ₇㻌㻌㻔㻌㻝㻣㻦㻝㻡㻙㻝㻣㻦㻠㻡㻌㻕䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇䝘䝜䝏䝳䞊䝤䛾⏕ᡂ䛸⢭〇㻟㻙㻝㻝ᾮ୰䛾䠟䠪䠰จ㞟య䛾✵㝽⋡䛸䝃䜲䝈䛾ศᯒἲ䚹㐲ᚰỿ㝆䜢ά⏝䛩䜛୍⯡ⓗ᪉ἲ㻠㻠㻌㻖㻌ຍ⸨㻌㞝୍㻘㻌᳃ᮏ㻌ᓫᏹ㻘㻌ᑠᶫ㻌࿴ᩥ㻘㻌ᒸᓮ㻌ಇஓ㻟㻙㻝㻞㼄㻼㻿㻌㼕㼚㼢㼑㼟㼠㼕㼓㼍㼠㼕㼛㼚㻌㼞㼑㼢㼑㼍㼘㼕㼚㼓㻌㼠㼔㼑㻌㼍㼏㼠㼕㼢㼍㼠㼕㼛㼚㻌㼛㼒㻌㼕㼞㼛㼚㻌㼏㼍㼠㼍㼘㼥㼟㼠㻌㼎㼥㻌㼍㻌㼟㼙㼍㼘㼘㻌㼍㼙㼛㼡㼚㼠㻌㼛㼒㻌㼚㼛㼎㼘㼑㻌㼙㼑㼠㼍㼘㼟㼣㼕㼠㼔㼛㼡㼠㻌㼞㼑㼐㼡㼏㼕㼚㼓㻌㼓㼍㼟㻌㼠㼛㼣㼍㼞㼐㼟㻌㼠㼔㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻌㼛㼒㻌㼠㼍㼘㼘㻌㼏㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼠㼡㼎㼑㻌㼒㼛㼞㼑㼟㼠㻠㻡㻌㻖㻌ᱜ஭㻌ಇ௓㻘㻌ఱ㻌㔠ⴍ㻘㻌␊㻌㈼἞㻘㻌㻲㼡㼠㼍㼎㼍㻌㻰㼛㼚≉ูㅮ₇㻌㻌㻔㻌㻝㻣㻦㻠㻡㻙㻝㻤㻦㻝㻡㻌㻕≉ูㅮ₇㻌㻌㻔㻌㻝㻣㻦㻠㻡㻙㻝㻤㻦㻝㻡㻌㻕㻟㻿㻙㻠㟁Ꮚ㢧ᚤ㙾䜢౑䛳䛯஧ḟඖᮦᩱ䛾ᒁᡤ᣺ື≉ᛶホ౯㻌㻖㻌༓㈡㻌ு඾㻘㻌ᮎỌ࿴▱㻘㻌㼀㼔㼛㼙㼍㼟㻌㻼㼕㼏㼔㼘㼑㼞xv

㻥㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻞㻡㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻞㻡㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻦㻌㻝㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻦㻌㻝㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻝㻡㻙㻥㻦㻠㻡㻌㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻝㻡㻙㻥㻦㻠㻡㻌㻕㻝㻿㻙㻝Hetero-nanotubes based on single-walled carbon nanotubes* Shigeo Maruyama,㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻠㻡㻙㻝㻜㻦㻟㻜㻌㻕㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻝㻙㻝
Linaer Temperature Dependence of Nanotube Yarn Resistance* Takumi Inaba, Takahiro Morimoto, Satoshi Yamazaki, Toshiya Okazaki
Indirect to direct band gap crossover of single walled MoS2 nanotubes* Kaoru Hisama, Mina Maruyama, Susumu Okada, Shohei Chiashi, Shigeo
Maruyama㻝㻙㻞Diameter-dependent Photoluminescence Properties in Color Centers of Air-Suspended
Single-Walled Carbon Nanotubes* Daichi Kozawa, Xiaojian Wu, Akihiro Ishii, Jacob Fortner, Keigo Otsuka, Rong
Xiang, Taiki Inoue, Shigeo Maruyama, YuHuang Wang, Yuichiro K. Kato

㻝㻙㻟

㻝

㻝㻝

㻝㻞

㻝㻟

㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻟㻜㻌㻕㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌䡃㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌䡃㼞㼍㼜㼔㼑㼚㼑㻝㻙㻠
Energetics and electronic structure of bilayer graphene intercalating buckybowls* Mina Maruyama, Susumu Okada
㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻝㻙㻡
Direct synthesis of size-controlled quantum dots with graphene nanoribbon* Mizuki Seo, Takahito Kitada, Toshiro Kaneko, Tomohiro Otsuka, Toshiaki Kato㻭㼜㼜㼘㼕㼏㼍㼠㼕㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻭㼜㼜㼘㼕㼏㼍㼠㼕㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻝㻙㻢
High-order mode operation of graphene mechanical resonator* Hirofumi Ikemoto, Kaito Nakagawa, Taichi Inoue, Kuniharu Takei, Takayuki Arie,
Seiji Akita

㻝㻠

㻝㻡

㻝㻢

㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻌㻔㻌㻝㻝㻦㻟㻜㻙㻝㻞㻦㻝㻡㻌㻕䚷䠄䖪䠅㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻌㻔㻌㻝㻝㻦㻟㻜㻙㻝㻞㻦㻝㻡㻌㻕䚷䠄䖪䠅㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐
MWCNT growth mechanism using FeCl2 catalyst precursor
㻝㻼㻙㻝
㻠㻣
䖪
* Tatsuhiro Hayashi, Takayuki Nakano, Yoku Inoue㻝㻼㻙㻞䖪

Light-driven wavelength shifts of photoluminescence from single-walled carbon
nanotubes by functionalization with diarylethene derivatives* Yasuto Nakagawa, Takuya Nakashima, Tsuyoshi Kawai, Tsuyohiko Fujigaya,
Tomohiro Shiraki

xvi

㻠㻤

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚

㻝㻼㻙㻟
䖪
㻝㻼㻙㻠
䖪
㻝㻼㻙㻡
䖪
㻝㻼㻙㻢
䖪

Fabrication of Carbon Nanotube Thin Films for Flexible Transistor Applications usinga Cross-linked Amine Polymer* Kaisei Matsumoto, Kazuki Ueno, Jun Hirotani, Yutaka Ohno, Haruka Omachi
Structure-dependent solvatochromic shifts of excitonic photoluminescence from locallyfunctionalized single-walled carbon nanotubes* Yoshiaki Niidome, Tsuyohiko Fujigaya, Tomohiro Shiraki
Visualization of thermal transports on bundled carbon nanotubes by monitoring
evaporation of gold nanoparticles* Hiromu Hamasaki, Seiya Takimoto, Kaori Hirahara
Measurement of Zeta potential of single-walled carbon nanotubes in non-polar organic
solvent* Taiki Ishii, Angana Borah, Naoki Tanaka, Tsuyohiko Fujigaya

㻠㻥

㻡㻜

㻡㻝

㻡㻞

䖪

Near-Infrared Fluorescence Immunoassay Using Streptavidin-Conjugated OxygenDoped Carbon Nanotubes* Keiko Kojima, Yoko Iizumi, Minfang Zhang, Toshiya Okazaki㻝㻼㻙㻤䖪

Effects of channel length on performance of transparent solar cell with monolayer WS2* Xing He, Toshiro Kaneko, Toshiaki Kato

㻡㻠

㻝㻼㻙㻥

Robust easy-plane 2D ferromagnetism in Cr1/3NbSe2 ultrathin films* Yuki Majima, Bruno Kenichi Saika, Hideki Matsuoka, Masaki Nakano, Satoshi
Yoshida, Kyoko Ishizaka, Yoshihiro Iwasa

㻡㻡

㻝㻼㻙㻣

䖪

㻡㻟

㻝㻼㻙㻝㻜

㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟Energetics and geometric structure of corannulene under an external electric field* Susumu Okada, Yanlin Gao, Mina Maruyama㻡㻢㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Survival of Sub-nm Carbon Nanotubes under Femtosecond Laser Shot: A TDDFT
㻝㻼㻙㻝㻝
Study
* Yoshiyuki Miyamoto㻡㻣㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟One dimensionality of the thermoelectric properties in semiconducting single walled㻝㻼㻙㻝㻞carbon nanotubes* Yota Ichinose, Manaho Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji,
Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, Kazuhiro Yanagi㻝㻼㻙㻝㻟Simple and Effective Method to Control Photoluminescence Properties of Singlewalled Carbon Nanotubes by Ultrasonic Irradiation* Yui Konno, Akane Nishino, Michio Yamada, Yutaka Maeda, Saki Okudaira, Yuhei
Miyauchi, Kazunari Matsuda, Jun Matsui, Masaya Mitsuishi, Mitsuaki Suzuki

xvii

㻡㻤

㻡㻥

㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻌㻝㻢㼠㼔㻘㻌㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
8WLOL]DWLRQRIWUDQVSDUHQW6:&17ILOPVLQWHUPLQDOSHURYVNLWHVLOLFRQWDQGHPVRODU
Utilizationof transparent SWCNT films in 4-terminal perovskite-silicon tandem solar
㻝㻼㻙㻝㻠
FHOOV
cells
Ahmed Shawky,
Shawky, Kosuke
Kosuke Akino,** Ahmed
Akino,Takuya
TakuyaMatsui,
Matsui,Taiki
TaikiInoue,
Inoue,Esko
EskoKauppinen,
Kauppinen,
Shohei Chiashi,
Chiashi, Shigeo
Shohei
Shigeo Maruyama
Maruyama
㻝㻼㻙㻝㻡

㻝㻼㻙㻝㻢

㻝㻼㻙㻝㻣

6LPSOHDQGKLJKO\HIILFLHQWLQWHUPLWWHQWRSHUDWLRQFLUFXLWIRUWULERHOHFWULFQDQRJHQHUDWRU
Simpleand highly efficient intermittent operation circuit for triboelectric nanogenerator
Atsushi Kawaguchi,
Jun Hirotani,
Hirotani, Yutaka
Yutaka** Atsushi
Kawaguchi, Masahiro
Masahiro Matsunaga,
Matsunaga, Haruki
Haruki Uchiyama,
Uchiyama, Jun&DUERQQDQRWXEH&XWKURXJK6LYLDLQWHUSRVHUZLWK&XOHYHOHOHFWULFDOFRQGXFWLYLW\
Carbonnanotube-Cu through-Si-via interposer with Cu-level electrical conductivity
DQG6LFRPSDUDEOHWKHUPDOH[SDQVLRQ
andSi-comparable thermal expansion
Guohai Chen,
Chen, Rajyashree
Rajyashree Sundaram,
Sundaram, Asuko
AtsukoSekiguchi,
Sekiguchi,Kenji
KenjiHata,
Hata,DonDonN.
N.Futaba
Futaba** Guohai(OHFWULFDOGHWHFWLRQRI;UD\E\XVLQJFRSODQDU&17WKLQILOPHOHFWURGHVRQ3(1Electricaldetection of X-ray by using coplanar CNT thin-film electrodes on PEN
VXEVWUDWH
substrate
Satoru Suzuki,
Suzuki, Hiroyuki
Hiroyuki Matsuda,
Matsuda, Takahiro
Takahiro Ishikawa,
Ishikawa, Teruaki
Teruaki Konishi,
Konishi, Tsuyoshi** Satoru
Tsuyoshi
Hamano, Hiroshi
Hiroshi Ajiki,
Ajiki, Yutaka
Yutaka Ohno,
Hamano,Ohno, Toshio
Toshio Hirao,
Hirao, Satoshi
Satoshi Ishii
Ishii

㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟&RQWUROOHGV\QWKHVLVRIJUDSKHQHQDQRULEERQVIURPIOXFWXDWLRQLQGXFHGQDQREDU
Controlled
synthesis of graphene nanoribbons from fluctuation-induced nanobar
Naofumi Sato,
Sato, Toshiro** Naofumi
Toshiro Kaneko,
Kaneko, Toshiaki
Toshiaki Kato
Kato

㻝㻼㻙㻝㻤

㻝㻼㻙㻝㻥

)DEULFDWLRQRIODUJH1LJUDLQRQVDSSKLUHVXEVWUDWHIRUJUDSKHQHJURZWK
Fabricationof large Ni grain on sapphire substrate for graphene growth
Asato Nakashima,
Nakashima, Tatsuya
Tatsuya Kashio,** Asato
Kashio, Tomoaki
Tomoaki Murahashi,
Murahashi, Tsukasa
Tsukasa Soga,
Soga, Takahiro
Takahiro
Maruyama, Shigeya
Shigeya Naritsuka
Naritsuka
Maruyama,㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑
7KH,QVWUXFWLYH$VSHFWRI0RLUH3DWWHQ$QDO\VLVRI5RWDWLRQ/HVV7KDQGHJUHHRQ
The
Instructive Aspect of Moire-Patten Analysis of Rotation Less Than 0.5-degree on㻝㻼㻙㻞㻜
7ZLVWHG%LOD\HU*UDSKHQHE\7RROIRU&RPSXWHU,PDJLQJ
Twisted
Bilayer Graphene by Tool for Computer Imaging
Yuhei Natsume,** Yuhei
Natsume, Tohei
Tohei Moritani
Moritani㻝㻼㻙㻞㻝

5DPDQRSWRWKHUPDOPHWKRGVWRPHDVXUHLQWHUIDFLDOWKHUPDOFRQGXFWDQFHRIORZ
Raman
optothermal methods to measure interfacial thermal conductance of lowGLPHQVLRQDOPDWHULDOV
dimensional
materials
Qin-Yi Li,** Qin-Yi
Li, Koji
Koji Takahashi
Takahashi㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑
1RQGLIIXVLYHPROHFXODUWUDQVSRUWLQJUDSKHQHOLTXLGFHOOV
Non-diffusive
molecular transport in graphene liquid cells
Sota Hirokawa,
Hirokawa, Hideaki
Hideaki Teshima,
Teshima, Pablo
Pablo Fernandez,
Solís-Fernández,
Ago, Tomo,
Yoko Tomo,** Sota
HirokiHiroki
Ago, Yoko
QinQin-Yi
Li, KojiTakahashi
Yi
Li, KojiTakahashi㻝㻼㻙㻞㻞㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟/D\HUVHOHFWLYHGRSDQWLPSODQWDWLRQLQYDQGHU:DDOVKHWHURVWUXFWXUHVLayer-selective
dopant implantation in van der Waals heterostructures
Hiroto Ogura,
Ogura, Yuya
Yuya Murai,
Hong** Hiroto
Murai, Toshifumi
Toshifumi Irisawa,
Irisawa,Zheng
ZhengLiu,
Liu,Hiroshi
HiroshiShimizu,
Shimizu,Hong
En Lim,Ryo
Kitaura,Yasumitsu
MiyataEn
Lim,Yusuke
YusukeNakanishi,
Nakanishi,Takahiko
TakahikoEndo,
Endo,
Ryo
Kitaura,Yasumitsu
Miyata

㻝㻼㻙㻞㻟

xviii

㻢㻜

㻢㻝

㻢㻞

㻢㻟

㻢㻠

㻢㻡

㻢㻢

㻢㻣

㻢㻤

㻢㻥

㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻌㻝㻢㼠㼔㻘㻌㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻝㻼㻙㻞㻠Hydrogen adsorption effects on the electronic properties of TaS2
* Yasushi Ishiguro, Naoko Kodama, Kirill Bogdanov, Alexander Baranov, Kazuyuki
Takai㻺㼍㼚㼛㼣㼕㼞㼑㼟㻺㼍㼚㼛㼣㼕㼞㼑㼟
㻺㼍㼚㼛㼣㼕㼞㼑㼟
6LPSOHIRUPXODRIHQKDQFHPHQWRIWKHHOHFWULFILHOGLQVLGHDKROORZPDWDOOLFF\OLQGHU
Simpleformula of enhancement of the electric field inside a hollow matallic cylinder
Yuan Tian,** YuanTian, Muhammad
Muhammad Shoufie
Shoufie Ukhtary,
Ukhtary, Riichiro
Riichiro Saito
Saito

㻝㻼㻙㻞㻡

㻝㻼㻙㻞㻢

7HOOXUL]DWLRQRIVROXWLRQV\QWKHVL]HGWXQJVWHQR[LGHQDQRZLUHV
Tellurizationof solution-synthesized tungsten oxide nanowires
Mai Nagano,
Nagano, Yohei
Yohei Yomogida,** Mai
Yomogida, Yasumitsu
Yasumitsu Miyata,
Miyata, Kazuhiro
Kazuhiro Yanagi
Yanagi㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟First-principles calculation of excitonic effect in Raman spectra* Xiaoqi Pang, T.Hung Nguyen, Riichiro Saito

㻝㻼㻙㻞㻣

㻣㻜

㻣㻝

㻣㻞

㻣㻟

㻌㻌㻌㻌㻌㻌㻌㻌䚷䚷㻌㻌㻌㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻝㻡㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕㻌㻌㻌㻌㻌㻌㻌䚷䚷㻌㻌㻌㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕
Improvement of photodynamic activity by dyad systems of fullerene derivative and㻝㻿㻙㻞photo-antenna molecule incorporated into liposomes* Atsushi Ikeda, Daiki Antoku, Kouta Sugikawa, Riku Kawasaki㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻠㻡㻌㻕㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻝㻙㻣One dimensional hetero-junction diode* Ya Feng, Henan Li, Taiki Inoue, Shigeo Maruyama
㻝㻙㻤

㻝㻙㻥

Polyaromatic Anthracene Nano-tweezer on Semiconducting Carbon Nanotubes for
Growth and Bridging of Perovskite Crystal Grains in Perovskite Solar Cells* Hao-Sheng Lin, IL Jeon, Yutaka Matsuo, Shigeo Maruyama
Aligned carbon nanotube/polymer composite films for high thermal diffusivity* Maireyee Bhattacharya, Manish Pandey, Ryo Abe, Naofumi Okamoto, Yuki
Sekimoto, Masakazu Nakamura

㻞

㻝㻣

㻝㻤

㻝㻥

㻌㻌㻌㻌㻌㻌㻌䚷䚷㻌㻌㻌㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻌㻕㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻌㻕㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻜㻜㻙㻝㻣㻦㻟㻜㻌㻕㻝㻿㻙㻟
Twisted bilayer graphene with clean interface by direct transfer of CVD graphene* Satoru Tanaka, Hitoshi Imamura, Anton Visikovskiy, Ryosuke Uotani, Takashi
Kajiwara, Hiroshi Ando, Takushi Iimori, Kota Iwata, Toshio Miyamachi, Kan
Nakatsuji, Kazuhiko Mase, Tetsuroh Shirasawa, Fumio Komorixix㻟㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻢㼠㼔㻘㻌㼃㼑㼐㻚㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Gas-phase growth and localized deposition of highly crystalline carbon nanotubes
㻝㻙㻝㻜
using a microplasma reactor* Takashi Tsuji, Yoshiki Shimizu, Jaeho Kim, Hajime Sakakita, Kenji Hata, Don
Futaba, Shunsuke Sakurai㻱㼚㼐㼛㼔㼑㼐㼞㼍㼘㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻱㼚㼐㼛㼔㼑㼐㼞㼍㼘㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Real-time Video Imaging of a Shuttling Fullerene Molecule in a Vibrating Carbon㻝㻙㻝㻝Nanotube* Toshiki Shimizu, Dominik Lungerich, Joshua Stuckner, Mitsuhiro Murayama, Koji
Harano, Eiichi Nakamura㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㼀㼡㼠㼛㼞㼕㼍䡈㻌㻌㻔㻌㻝㻤㻦㻝㻡㻙㻝㻥㻦㻠㻡㻌㻕㼀㼡㼠㼛㼞㼕㼍䡈㻌㻌㻔㻌㻝㻤㻦㻝㻡㻙㻝㻥㻦㻠㻡㻌㻕
Fundamental and application of optical physics in nano-carbon and atomically thinmaterials* Kazunari Matsuda

xx

㻞㻜

㻞㻝

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻞㻡㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻞㻡㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻭㼣㼍㼞㼐㻌㻺㼛㼙㼕㼚㼑㼑㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻝㻜㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻭㼣㼍㼞㼐㻌㻺㼛㼙㼕㼚㼑㼑㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻝㻜㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻦㻌㻝㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻦㻌㻝㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕㻞㻿㻙㻝Emergent transport phenomena at van der Waals interfaces explored by MBE* Masaki Nakano㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻜㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻜㻜㻌㻕㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑
㻞㻙㻝
Electronic properties of graphene with structural defects arranged periodically* Yuta Taguchi, Susumu Saito㻞㻙㻞

Control of the photoluminescence by tuning the Fermi level in single-layer graphene* Daiki Inukai, Kensuke Saito, Takeshi Koyama, Kenji Kawahara, Hiroki Ago, Hideo
Kishida㻠㻞㻞㻞㻟㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻜㻦㻜㻜㻙㻝㻜㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻜㻦㻜㻜㻙㻝㻜㻦㻝㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻜㻦㻝㻡㻙㻝㻝㻦㻟㻡㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻜㻦㻝㻡㻙㻝㻝㻦㻟㻡㻌㻕㻸㼑㼏㼠㼡㼞㼑㼟㻌㼛㼒㻌㻻㼟㼍㼣㼍㻌㻭㼣㼍㼞㼐㻌㼍㼚㼐㻌㻵㼕㼖㼕㼙㼍㻌㻭㼣㼍㼞㼐㻌㻺㼛㼙㼕㼚㼑㼑㼟㻸㼑㼏㼠㼡㼞㼑㼟㻌㼛㼒㻌㻻㼟㼍㼣㼍㻌㻭㼣㼍㼞㼐㻌㼍㼚㼐㻌㻵㼕㼖㼕㼙㼍㻌㻭㼣㼍㼞㼐㻌㻺㼛㼙㼕㼚㼑㼑㼟
Bottom-Up Growth of One-dimensional Transition Metal Chalcogenides and Their㻞㻙㻟
Characterization* Yusuke Nakanishi, Naoyuki Kanda, Chisato Ando, Masa Nagata, Motoki Aizaki,
Zheng Liu, Takuma Shiga, Kazu Suenaga, Hisanori Shinohara, Yasumitsu Miyata
㻞㻙㻠

㻞㻙㻡

㻞㻙㻢

Isothermal growth and stacking evolution of highly uniform AB-stacked bilayer* Pablo Solís-Fernández, Yuri Terao, Kenji Kawahara, Wataru Nishiyama, Teerayut
Uwanno, Yung-Chang Lin, Keisuke Yamamoto, Hiroshi Nakashima, Kosuke Nagashio,
Hiroki Hibino, Kazu Suenaga, Hiroki Ago
Concise, Single-Step Synthesis of Sulfur-Enriched Graphene: Immobilization of
Molecular Clusters and Battery Applications* Haruka Omachi, Tsukasa Inoue, Shunya Hatao, Criado Alejandro, Hisanori
Shinohara, Hirofumi Yoshikawa, Zois Syrgiannis, Maurizio Prato
Wafer-scale synthesis of 1D transition metal chalcogenide nanowires* Hong En Lim, Yusuke Nakanishi, Zheng Liu, Jiang Pu, Takahiko Endo, ChisatoAndo, Hiroshi Shimizu, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata

㻞㻠

㻞㻡

㻞㻢

㻞㻣

㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻌㻔㻌㻝㻝㻦㻟㻡㻙㻝㻞㻦㻞㻜㻌㻕䚷䠄䖪䠅㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻌㻔㻌㻝㻝㻦㻟㻡㻙㻝㻞㻦㻞㻜㻌㻕䚷䠄䖪䠅㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐
Photoluminescence property changes of locally functionalized single-walled carbon㻞㻼㻙㻝㻣㻠nanotubes using structural differences of proximal modifiers䖪* Haruka Aoki, Naoki Tanaka, Tsuyohiko Fujigaya, Tomohiro Shirakixxi㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚

㻞㻼㻙㻞
䖪

㻞㻼㻙㻟
䖪
㻞㻼㻙㻠
䖪

㻞㻼㻙㻡
䖪

㻞㻼㻙㻢
䖪

㻞㻼㻙㻣
䖪
㻞㻼㻙㻤
䖪
㻞㻼㻙㻥
䖪

Temperature dependence of Seebeck coefficients in Semiconducting and Metallic
Single-Wall Carbon Nanotube film.
* Akari Yoshida, Yota Ichinose, Kengo Fukuhara, Kan Ueji, Yohei Yomogida,
Kazuhiro Yanagi
Effects of pyrene derivatives on photoluminescence properties of single-walled carbon
nanotubes* Boda Yu, Tsuyohiko Fujigaya, Tomohiro Shiraki
MoO3 Doping of Carbon Nanotube Top Electrodes for Highly Efficient MetalElectrode-Free Perovskite Solar Cells* Seungju Seo, Il Jeon, Kosuke Akino, Hiroki Nagaya, Esko Kauppinen, Yutaka
Matsuo, Shigeo Maruyama
Monitoring of adsorption behavior of serum albumin onto the single-walled carbon
nanotube functionalized with fatty acid
* Kenta Nakamura, Yoshiaki Niidome, Yukiko Nagai, Naoki Tanaka, Tomohiro
Shiraki, Takeshi Mori, Yoshiki Katayama, Tsuyohiko Fujigayan-type doping from sulfhydryl groups of proteins to semiconducting single-wall carbon
nanotube* Tomohito Nakayama, Hirotaka Inoue, Yuho Shigeeda, Yasuhiko Hayashi, Takeshi
Tanaka, Atsushi Hirano, Muneaki Hase
Time-resolved photoluminescence spectroscopy of epitaxial monolayer and bilayer
graphene on SiC* Kensuke Saito, Jianfeng Bao, Wataru Norimatsu, Michiko Kusunoki, Hideo Kishida,
Takeshi Koyama

㻣㻡

㻣㻢

㻣㻣

㻣㻤

㻣㻥

㻤㻜

A controllable post doping method for TMD atomic layers* Yuya Murai, Shoji Yoshida, Zheng Liu, Toshifumi Irisawa, Hiroshi Shimizu,
Takahiko Endo, Yasumitsu Miyata, Ryo Kitaura㻤㻝Superconducting properties in three-dimensional networks of NbSe2 films* Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke
Nakanishi, Jiang Pu, Taishi Takenobu

㻤㻞

㻞㻼㻙㻝㻜

㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟
Crystallinity dependence on mechanical properties of aerographite particles* Yuexuan Li, Hiromu Hamasaki, Kaori Hirahara㻤㻟㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟High-density CNT forest by multiple coating of iron oxide nano-colloid for dry㻞㻼㻙㻝㻝
spinnable CNT forest* Kento Tabata, Takayuki Nakano, Yoku Inoue

㻤㻠

xxii

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻞㻼㻙㻝㻞

Activation of Alkane for CVD Growth of Single-Wall Carbon Nanotubes* Pengfei Chen, Mengju Yang, Rei Nakagawa, Hisashi Sugime, Hitoshi Mazaki,
Suguru Noda

㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Growth mechanism of one-dimensional heterostructures* Yongjia Zheng, Yang Qian, Ming Liu, Akihito Kumamoto, Yuichi Ikuhara, Esko I.
Kauppinen, Shohei Chiashi, Taiki Inoue, Rong Xiang, Shigeo Maruyama

㻞㻼㻙㻝㻟

㻞㻼㻙㻝㻠

Imaging of functional group distribution on carbon nanomaterials with highly spatiallyresolved SEM-EDS* Hideaki Nakajima, Takahiro Morimoto, Ying Zhou, Kazufumi Kobashi, Takeo
Yamada, Toshiya Okazaki㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Foot Pressure Sensor System Made from MWCNT Coated Cotton Fibers to Monitor㻞㻼㻙㻝㻡
Human Activities and Sports Performance* Md. Abdul Momin, Mohammad Jellur Rahman, Tetsu Mieno
㻞㻼㻙㻝㻢

㻞㻼㻙㻝㻣

Improvement of carbon nanotube filament formation efficiency by gas discharge
breakdown using triode electrode configuration* Hiro Hayama, Soichiro Magata, Hideki Sato
Quantitative study of sheet thermal conductance of Single-Walled carbon nanotube
film* Pengyingkai Wang, Yongjia Zheng, Taiki Inoue, Rong Xiang, Shohei Chiashi,
Makoto Watanabe, Shigeo Maruyama㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟In-situ X-ray diffraction monitor of multi-layer graphene precipitated from㻞㻼㻙㻝㻤
nanodiamonds* Tatsuya Kashio, Asato Nakashima, Yuki Ueda, Takahiro Maruyama, Shigeya
Naritsuka
㻞㻼㻙㻝㻥

Non-destructive, Uniform, and Continuous Electrochemical Functionalization ofGraphite Sheet* Yuta Nishina, Benoit Campeon, Masato Komoda㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑Resolution of the phonon scattering by transient phonon spectra of graphene in㻞㻼㻙㻞㻜molecular dynamics calculations* Tatiana Zolotoukhna, Shohei Hokazono㻞㻼㻙㻞㻝

Raman spectroscopy of graphene oxide and reduced graphene oxide flakes on Si-based
substrates* K. Kanishka H. De Silva, Seiya Suzuki, Pamarti Viswanath, Masamichi
Yoshimura
xxiii

㻤㻡

㻤㻢

㻤㻣

㻤㻤

㻤㻥

㻥㻜

㻥㻝

㻥㻞

㻥㻟

㻥㻠

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑
Synthesis of Mo2C/C composite films as electrocatalyst for the hydrogen evolution㻞㻼㻙㻞㻞
reaction by microwave-plasma CVD method* Shunsuke Numata , Hironori Ogata
㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟
Anomalous electroluminescence from WS2/WSe2 in-plane heterostructures* Naoki Wada, Jiang Pu, Tomoyuki Yamada, Wenjin Zhang, Zheng Liu, Yusuke
Nakanishi, Yutaka Maniwa, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu,
Yasumitsu Miyata

㻞㻼㻙㻞㻟

㻞㻼㻙㻞㻠

Effects of defect formation in monolayer MoS2 by low energy Ar+ ion beam irradiation* Yangzhou Zhao, Hiroki Yokota, Haruna Ichikawa, Yasushi Ishiguro, Kazuyuki
Takai

㻥㻡

㻥㻢

㻥㻣

㻺㼍㼚㼛㼣㼕㼞㼑㼟㻺㼍㼚㼛㼣㼕㼞㼑㼟㻞㻼㻙㻞㻡 Synthesis of NbSe2 nanowires by selenization of niobium oxide nanowires* Ryoga Tanaka, Yohei Yomogida, Yasumitsu Miyata, Kazuhiro Yanagi㻥㻤㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟
Polarized Raman spectra of LaAlSi* Tong Wang, Xiaoqi Pang, Nguyen T. Hung, Riichiro Saito

㻥㻥

㻞㻼㻙㻞㻢

㻞㻼㻙㻞㻣

Electronic and geometric structures of carbon nano-boxes of centrohexaquinane* Yasumaru Fujii, Mina Maruyama, Susumu Okada㻝㻜㻜㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻞㻜㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻞㻜㻙㻝㻟㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻟㻜㻙㻝㻡㻦㻝㻡㻌㻕㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻡㻦㻝㻡㻙㻝㻡㻦㻟㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻭㼣㼍㼞㼐㼟㻌㻯㼑㼞㼑㼙㼛㼚㼥㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕䚷㻭㼣㼍㼞㼐㼟㻌㻯㼑㼞㼑㼙㼛㼚㼥㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻜㻜㻌㻕䚷㻳㼑㼚㼑㼞㼍㼘㻌㻹㼑㼑㼠㼕㼚㼓㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜㻌㻕䚷㻳㼑㼚㼑㼞㼍㼘㻌㻹㼑㼑㼠㼕㼚㼓㻌㻌㻔㻌㻝㻢㻦㻜㻜㻙㻝㻢㻦㻟㻜㻌㻕䚷㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻟㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻟㻜㻌㻕㻯㼔㼑㼙㼕㼟㼠㼞㼥㻌㼛㼒㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼟㻯㼔㼑㼙㼕㼟㼠㼞㼥㻌㼛㼒㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼟Infrared spectroscopy of C60 molecules: From the laboratory detection to cosmic
㻞㻙㻣abundances* Tomonari Wakabayashi
㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟㻯㼍㼞㼎㼛㼚㻌㼚㼍㼚㼛㼜㼍㼞㼠㼕㼏㼘㼑㼟㻞㻙㻤
Primary Particles of Detonation Nanodiamond Finally Identified* Eiji Osawa, Amanda S. Barnard, Toshihiko Tanaka

xxiv

㻞㻤

㻞㻥

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻣㼠㼔㻘㻌㼀㼔㼡㻚㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼟
Stereoselective synthesis and HIV/HCV enzyme inhibition activity of proline-type
㻞㻙㻥fullerene derivatives* Daiki Katagishi, Tomoyuki Ohe, Kyoko Takahashi, Shigeo Nakamura, Tadahiko
Mashino㻟㻜㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻟㻜㻙㻝㻤㻦㻜㻜㻌㻕㻞㻿㻙㻞Graphene oxide as a super material* Shinya Hayami㻡㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻠㻡㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻤㻦㻜㻜㻙㻝㻤㻦㻠㻡㻌㻕㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑The Effect of Heteroatom Doped Reduced Graphene Oxide in Enhancement of㻞㻙㻝㻜
Thermoelectric Performance* Mariamu Ali, Mohsen Khozami, Mohsen Ghali, Nageh Shaalan, Koichi
Nakamura, Ahmed AbdElMoneim

㻟㻝㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑
Molecular Modification of Graphene on Metal Substrate: Electrochemical Defect㻞㻙㻝㻝Insertion and Evaluation of Surface Defects* Tomohiro Fukushima, Takaha Komai, Kei Murakoshi

㻟㻞

㻞㻙㻝㻞

Molecular Modification of Graphene on Metal Substrate: Electrochemical DefectInsertion for Controlled Proton Permeation* Takaha Komai, Tomohiro Fukushima, Kei Murakoshi

xxv

㻟㻟

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻞㻡㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻞㻡㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻦㻌㻝㻜㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻗㻌㻡㼙㼕㼚㻌㻔㻰㼕㼟㼏㼡㼟㼟㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻦㻌㻝㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻌㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻦㻌㻝㼙㼕㼚㻌㻔㻼㼞㼑㼟㼑㼚㼠㼍㼠㼕㼛㼚㻕㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕䚷㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻜㻜㻙㻥㻦㻟㻜㻌㻕䚷㻟㻿㻙㻝
Active site of nitrogen-doped carbon catalysts for fuel cell
* Junji Nakamura㻢㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻟㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻥㻦㻟㻜㻙㻝㻜㻦㻟㻜㻌㻕㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻟㻙㻝
2D tin layers on SiC(0001)* Anton Visikovskiy, Hiroshi Ando, Shingo Hayashi, Fumio Komori, Koichiro Yaji,
Satoru Tanaka㻟㻠Strain effect on circularly-polarized electroluminescence in transition metal
dichalcogenides* Sake Wang, M. Shoufie Ukhtary, Riichiro Saito㻟㻙㻞

Operando electrical characterization of methane oxidation with atomically thin films ofIrO2 nanosheets* Ryo Nouchi, Yoshiaki Ishihara, Wataru Sugimoto㻟㻙㻟Electrical control of resonance frequency for drum-type hBN nano-electro-mechanicalresonator with photothermal actuation* Yusuke Morimoto, Kuniharu Takei, Takayuki Arie, Seiji Akita

㻟㻙㻠

㻟㻡

㻟㻢

㻟㻣

㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻜㻦㻟㻜㻙㻝㻜㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻝㻡㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻜㻦㻠㻡㻙㻝㻝㻦㻝㻡㻌㻕㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Promising next-gen Cu-substitutes: Lightweight Cu/Carbon Nanotube Composite㻟㻙㻡Electric Conductors* Rajyashree Sundaram, Guohai Chen, Takeo Yamada, Don Futaba, Kenji Hata, Ken
Kokubo, Atsuko Sekiguchi㻟㻙㻢Anthracene-assisted deterministic transfer of optical-quality carbon nanotubes* Keigo Otsuka, Yuichiro K. Kato㻟㻤㻟㻥㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻌㻔㻌㻝㻝㻦㻝㻡㻙㻝㻞㻦㻜㻜㻌㻕䚷䠄䖪䠅㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻼㼛㼟㼠㼑㼞㻌㻼㼞㼑㼢㼕㼑㼣㻌㻌㻔㻌㻝㻝㻦㻝㻡㻙㻝㻞㻦㻜㻜㻌㻕䚷䠄䖪䠅㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐㻯㼍㼚㼐㼕㼐㼍㼠㼑㼟㻌㼒㼛㼞㻌㼠㼔㼑㻌㼅㼛㼡㼚㼓㻌㻿㼏㼕㼑㼚㼠㼕㼟㼠㻌㻼㼛㼟㼠㼑㼞㻌㻭㼣㼍㼞㼐
Elucidation of adsorption state of polybenzimidazole on carbon surface by adsorption㻟㻼㻙㻝㻝㻜㻝
isotherm measurement
䖪* Nana Kayo, Tsuyohiko Fujigaya㻟㻼㻙㻞䖪Understanding the Effect of Sulfur on the Synthesis of Carbon Nanotubes* Rei Nakagawa, Michiko Edo, Hisashi Sugime, Suguru Noda

xxvi

㻝㻜㻞

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚
㻟㻼㻙㻟
䖪
㻟㻼㻙㻠
䖪
㻟㻼㻙㻡
䖪
㻟㻼㻙㻢
䖪

㻟㻼㻙㻣
䖪

Directional exciton diffusion in pentacene-decorated carbon nanotubes* Zhen Li, Keigo Otsuka, Daiki Yamashita, Yuichiro Kato
Locally functionalized single-walled carbon nanotubes synthesized by azide
compounds and their photoluminescence properties* Keita Hayashi, Tsuyohiko Fujigaya, Tomohiro Shiraki
Temperature dependence of Raman G-band shift in defective single-walled carbon
nanotubes* Masanori Endo, Haruki Uchiyama, Yutaka Ohno, Jun Hirotani
Doping of single-walled carbon nanotube by thermal evaporation method* Ryohei Yamaguchi, Kaito Oda, Motohiro Tomita, Takanobu Watanabe, Tsuyohiko
Fujigaya
Growth of Monolayer MoS2 Lateral p–n Junction with p-type Substitutional Nb
Doping* Mitsuhiro Okada, Toshifumi Irisawa, Naoya Okada, Wen-Hsin Chang, Tetsuo
Shimizu, Toshitaka Kubo, Masatou Ishihara

㻝㻜㻟

㻝㻜㻠

㻝㻜㻡

㻝㻜㻢

㻝㻜㻣

㻟㻼㻙㻤
䖪

Two-dimensional silicon phosphide with anisotropic optical and electronic properties* Mikio Kobayashi, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda

㻝㻜㻤

㻟㻼㻙㻥

Electron transport properties of WTe nanowire networks* Hiroshi Shimizu, Jiang Pu, Hong En Lim, Yusuke Nakanishi, Zheng Liu, TakahikoEndo, Taishi Takenobu, Yasumitsu Miyata㻝㻜㻥䖪㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼒㼡㼘㼘㼑㼞㼑㼚㼑㼟Preparation of ruthenium oxide-[C60]fullerene nanowhisker composites and their㻟㻼㻙㻝㻜
photocatalytic activity for degradation of azo dyes
* Jeong Won Ko, Sugyeong Jeon, Weon Bae Ko㻝㻝㻜㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
CNT/copper composite yarn made from metallic nanoparticle-decorated spin-capable㻟㻼㻙㻝㻝
CNT forest* Kosuke Tanaka, Takayuki Nakano, Yoku Inoue㻝㻝㻝㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Raman scattering spectroscopy of gas-flow oriented single-walled carbon nanotubes on
㻟㻼㻙㻝㻞
㻝㻝㻞
hexagonal boron-nitride* Shu Sato, Satoshi Yotsumoto, Masanori Bamba, Taiki Inoue, Shigeo Maruyama,
Shohei Chiashi
㻟㻼㻙㻝㻟Fermi-level dependence of high-harmonic generation in semiconducting single-walled㻝㻝㻟
carbon nanotubes with different bandgaps* Hiroyuki Nishidome, Kohei Nagai, Kento Uchida, Yota Ichinose, Junko Eda, Hitomi
Okubo, Yohei Yomogida, Koichiro Tanaka, Kazuhiro Yanagi
xxvii㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Effects of deposition method on the states of Pt nanoparticles on carbon materials and㻟㻼㻙㻝㻠their electrocatalytic properties toward methanol oxidation* Yuho Abe, Hironori Ogata
㻟㻼㻙㻝㻡

㻟㻼㻙㻝㻢

㻟㻼㻙㻝㻣

F4-TCNQ Vapor-doped Single Walled Carbon Nanotubes for Thermoelectric* Mariamu Ali, Naofumi Okamoto, Ryo Abe, Ahmed AbdelMoneim, Masakazu
Nakamura
Operation speed enhancement in carbon nanotube thin film transistors by self-aligned
process* Saya Ishimaru, Taiga Kashima, Hiromichi Kataura, Yuaka Ohno
Radical polymerization in the presence of carbon nanotubes (CNTs): Radical
scavenging by CNTs
* Taiyo Shimizu, Ryoichi Kishi, Takeo Yamada, Kenji Hata

㻝㻝㻠

㻝㻝㻡

㻝㻝㻢

㻝㻝㻣

㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟㻳㼞㼍㼜㼔㼑㼚㼑㻌㼟㼥㼚㼠㼔㼑㼟㼕㼟
Effect of Chemical Etching Treatment on Copper Foils for Single-Layer Graphene㻟㻼㻙㻝㻤
CVD Growth* Naoki Yoshihara, Masaru Noda㻝㻝㻤㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻟㻼㻙㻝㻥 Thermal transport property of suspended twisted bilayer graphene* Doi Juntaro, Mouri Shinichiro, Araki Tsutomu

㻝㻝㻥

㻟㻼㻙㻞㻜

Carrier control in bilayer graphene dual-gate field effect transistors by interlayer atomic㻝㻞㻜arrangement* Gao Yanlin, Okada Susumu㻟㻼㻙㻞㻝㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼓㼞㼍㼜㼔㼑㼚㼑Difference of functional groups in Graphene oxide in terms of chemical activity* Riku Kondo, Yoshiaki Matsuo, Kazuyuki Takai㻝㻞㻝㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻭㼠㼛㼙㼕㼏㻌㻸㼍㼥㼑㼞㼟㻟㻼㻙㻞㻞 Tailor-made two-dimensional nano-scale super-structures* Nanami Ichinose, Satoshi Iida, Liu Zheng, Ryo Kitaura

㻝㻞㻞

㻟㻼㻙㻞㻟

Chemically tuned p- and n-type WSe2 monolayers with improved carrier mobility forelectronic applications* Hyun Goo Ji, Pablo Solís-Fernández, Daisuke Yoshimura, Mina Maruyama,
Takahiko Endo, Yasumitsu Miyata, Susumu Okada, Hiroki Ago㻺㼍㼚㼛㼣㼕㼞㼑㼟㻺㼍㼚㼛㼣㼕㼞㼑㼟
Electrical Conductivity of Chemical-Vapor-Deposition Grown WTe Nanowire㻟㻼㻙㻞㻠Bundles* Chisato Ando, Yusuke Nakanishi, Hiroshi Shimizu, Hong En Lim, Zheng Liu,
Takahiko Endo, Yasumitsu Miyata
xxviii㻝㻞㻟㻝㻞㻠㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟㻻㼠㼔㼑㼞㻌㼠㼛㼜㼕㼏㼟First-principle calculation of the electronic state of a 2D covalent network of 1,3,5㻟㻼㻙㻞㻡
triamino benzene and benzene-1,3,5-tricarboxaldehyde* Hiroyuki Yokoi㻟㻼㻙㻞㻢

Two-channel model for low thermal conductivity of Mg3Bi2* Nguyen Tuan Hung, Riichiro Saito

㻝㻞㻡

㻝㻞㻢

㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻜㻜㻙㻝㻟㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻸㼡㼚㼏㼔㻌㼀㼕㼙㼑㻌㻌㻔㻌㻝㻞㻦㻜㻜㻙㻝㻟㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻜㻜㻙㻝㻠㻦㻠㻡㻌㻕㻼㼛㼟㼠㼑㼞㻌㻿㼑㼟㼟㼕㼛㼚㻌㻌㻔㻌㻝㻟㻦㻜㻜㻙㻝㻠㻦㻠㻡㻌㻕㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻠㻦㻠㻡㻙㻝㻡㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻠㻦㻠㻡㻙㻝㻡㻦㻜㻜㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻜㻜㻙㻝㻡㻦㻟㻜㻌㻕䚷㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻜㻜㻙㻝㻡㻦㻟㻜㻌㻕䚷㻟㻿㻙㻞Electronic band structure and transport phenomena in graphene with multiple layers* Ryuta Yagi㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻟㻜㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻡㻦㻟㻜㻙㻝㻢㻦㻟㻜㻌㻕㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻼㼞㼛㼜㼑㼞㼠㼕㼑㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻟㻙㻣Circular dichroism in doped carbon nanotubes* Riichiro Saito, Md. Shoufie Ukhtary, Sake Wang, Taisei Maeda, Yuya Iwasaki
㻟㻙㻤

㻟㻙㻥

Broadband complex refractive index spectra of single-chirality-enriched carbon
nanotube membranes* Taishi Nishihara, Akira Takakura, Kazunari Matsuda, Takeshi Tanaka, Hiromichi
Kataura, Yuhei Miyauchi
Unravelling the Thermal Conductivity of Semiconducting Carbon Nanotubes Film withDifferent Doping Levels* Kan Ueji, Yuya Matsuoka, Takashi Yagi, Yohei Yomogida, Yota Ichinose, Akari
Yoshida, Kazuhiro Yanagi㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻭㼜㼜㼘㼕㼏㼍㼠㼕㼛㼚㼟㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟The first electron-doping of single-walled carbon nanotube by captodatively stabilized㻟㻙㻝㻜boryl radical compounds* Naoki Tanaka, Aoi Hamasuna, Tsuyohiko Fujigaya

㻣

㻠㻜

㻠㻝

㻠㻞

㻠㻟

㻌䚷䚷㻌 㻌䚷䚷㻌㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻌䠚䠚䠚䠚䠚䠚䠚㻌㻯㼛㼒㼒㼑㼑㻌㻮㼞㼑㼍㼗㻌㻌㻔㻌㻝㻢㻦㻟㻜㻙㻝㻢㻦㻠㻡㻌㻕㻌䠘䠘䠘䠘䠘䠘䠘㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻝㻡㻌㻕䚷㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻢㻦㻠㻡㻙㻝㻣㻦㻝㻡㻌㻕䚷High resolution electron micrographs of serial brain tissue sections on conductive㻟㻿㻙㻟carbon nanotube coated PET tape and neural microcircuit analysis* Yoshiyuki Kubota

xxix

㻤

㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻌㻿㼑㼜㼠㼑㼙㼎㼑㼞㻌㻝㻤㼠㼔㻘㻌㻲㼞㼕㻚㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻝㻡㻙㻝㻣㻦㻠㻡㻌㻕㻳㼑㼚㼑㼞㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻝㻡㻙㻝㻣㻦㻠㻡㻌㻕㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟㻲㼛㼞㼙㼍㼠㼕㼛㼚㻌㼍㼚㼐㻌㼜㼡㼞㼕㼒㼕㼏㼍㼠㼕㼛㼚㻌㼛㼒㻌㼚㼍㼚㼛㼠㼡㼎㼑㼟
Porosity and Size Analysis of Carbon Nanotube Aggregates by Centrifugal㻟㻙㻝㻝
Sedimentation* Yuichi Kato, Takahiro Morimoto, Kazufumi Kobashi, Toshiya Okazaki㻟㻙㻝㻞

XPS investigation revealing the activation of iron catalyst by a small amount of noble
metals without reducing gas towards the synthesis of tall carbon nanotube forest* Shunsuke Sakurai, Jinping He, Kenji Hata, Don Futaba㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻠㻡㻙㻝㻤㻦㻝㻡㻌㻕䚷㻿㼜㼑㼏㼕㼍㼘㻌㻸㼑㼏㼠㼡㼞㼑㻌㻌㻔㻌㻝㻣㻦㻠㻡㻙㻝㻤㻦㻝㻡㻌㻕䚷
Nanoscale optical and vibrational spectroscopy of low-dimensional materials in㻟㻿㻙㻠electron microscope* Ryosuke Senga, Kazu Suenaga, Thomas Pichler

xxx

㻠㻠

㻠㻡

㻥

≉ูㅮ₇
Special Lecture

1S–1 㹼 1S–3
2S–1 㹼 2S–2
3S–1 㹼 3S–4


1S-1

+HWHURQDQRWXEHVEDVHGRQVLQJOHZDOOHGFDUERQQDQRWXEHVż6KLJHR0DUX\DPD
1Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan:H KDYH V\QWKHVL]HG D QHZ FRD[LDO QDQRWXEH VWUXFWXUH LQ ZKLFK PRQR RU IHZOD\HU
KH[DJRQDO ERURQ QLWULGH QDQRWXEH %117  VHDPOHVVO\ ZUDS DURXQG D VLQJOHZDOOHG FDUERQQDQRWXEH 6:&17 6:&17#%117>@:HQDPHGWKHVHDVRQHGLPHQVLRQDOYDQGHU:DDOVKHWHURVWUXFWXUHVEHFDXVHZHIRXQGQRFRUUHODWLRQEHWZHHQFKLUDODQJOHRILQQHU6:&17DQG
RXWHU%117IRUµGRXEOHZDOOHG¶6:&17#%117:HKDYHIXUWKHUGHYHORSHGWKH'FRDWLQJ
&9'RIWUDQVLWLRQPHWDOGLFKDOFRJHQLGHQDQRWXEHVVXFKDV0R6QDQRWXEHV 0R617 >@
7KHVHQDQRWXEHVFDQEHODEHOOHGDV6:&17#%117#0R6 DVLQ)LJ%HFDXVH%117LVWKHUPDOO\ PRUH VWDEOH WKDQ 6:&17 ZH FDQ UHPRYH 6:&17 IURP 6:&17#%117 E\ D
JHQWOHR[LGDWLRQSURFHVV+HQFHZHFDQSURGXFH%117ZLWKLQQHUGLDPHWHUGHWHUPLQHGE\WKH
RULJLQDO6:&177KHQWKH0R6&9'FDQUHVXOW%117#0R6170RUHUHFHQWO\ZHKDYHUHDOL]HGWKH&9'JURZWKRI6:&17DURXQG6:&17#%117RU6:&17ZKLFKZLOOUHVXOW
6:&17#%117#6:&17RU':&17:HFDQGHPRQVWUDWH':&17ZLWKLQQHU6:&17
DQG RXWHU 6:&17 %117 JURZWK RQ FKLUDOLW\VHOHFWHG 6:&17 LV DOVR SRVVLEOH 7KHVH
KHWHURQDQRWXEHV DUH FKDUDFWHUL]HG E\ +57(0 67(0((/6 DEVRUSWLRQ 5DPDQ DQGSKRWROXPLQHVFHQFH 3/ VSHFWURVFRS\:HIRXQGWKHEULJKW3/IURP0R6QDQRWXEHVIRU%117#0R617)URP')7FDOFXODWLRQV
ZHH[SHFWWKDWWKH.SRLQWGLUHFWEDQGJDS
IRU'0R6VKRXOGDSSHDUIRU0R617
ZLWKODUJHUGLDPHWHUVXFKDVQP7KH3/
IURP 0R617 ZDV TXHQFKHG E\ LQQHU
6:&17 PHWDOOLF RU VPDOO EDQGJDS
VHPLFRQGXFWRU  LQ WKH KHWHURQDQRWXEH
6:&17#%117#0R617 )RU WKHGHYLFHVZLWKKHWHURQDQRWXEHVZHQHHGWRVWDUW IURP VXVSHQGHG 6:&17V :H ZLOOGHPRQVWUDWH WKH JURZWK RI VXVSHQGHG
KHWHURQDQRWXEHV EHWZHHQ VLOLFRQ SLOODUV
DQG WKH WUDQVIHU WR 6L6L2 VXEVWUDWH IRUGHYLFH IDEULFDWLRQV )XUWKHUPRUH ZH ZLOOGLVFXVVWKHUPDOSURSHUWLHVRI%117FRDWHG
6:&17 ILOP >@ DQG VRODU FHOODSSOLFDWLRQRIKHWHURQDQRWXEHV>@)LJ9DULRXVVWUXFWXUHVRIKHWHURQDQRWXEHV>@5;LDQJ7,QRXH<=KHQJ$.XPDPRWR<4LDQ<6DWR0/LX'7DQJ'*RNKDOH-*XR.+LVDPD
6<RWVXPRWR72JDPRWR+$UDL<.RED\DVKL+=KDQJ%+RX$$QLVVLPRY00DUX\DPD<0L\DWD6
2NDGD6&KLDVKL</L(,.DXSSLQHQ<,NXKDUD.6XHQDJD60DUX\DPDScience  
>@3:DQJ<=KHQJ7,QRXH5;LDQJ$6KDZN\0:DWDQDEH$$QLVLPRY(,.DXSSLQHQ6&KLDVKL6
0DUX\DPDACS Nano  
>@<4LDQ66HR,-HRQ+/LQ62NDZD<=KHQJ$6KDZN\$$QLVLPRY(,.DXSSLQHQ-.RQJ5
;LDQJ<0DWVXR60DUX\DPDAppl. Phys. Express  
&RUUHVSRQGLQJ$XWKRU6KLJHR0DUX\DPD7HO)D[
:HEKWWSZZZSKRWRQWXWRN\RDFMSaPDUX\DPD(PDLOPDUX\DPD#SKRWRQWXWRN\RDFMS

-1-


1S-2

,PSURYHPHQWRISKRWRG\QDPLFDFWLYLW\E\G\DGV\VWHPVRIIXOOHUHQH
GHULYDWLYHDQGSKRWRDQWHQQDPROHFXOHLQFRUSRUDWHGLQWROLSRVRPHVż$WVXVKL,NHGD'DLNL$QWRNX.RXWD6XJLNDZD5LNX.DZDVDNL
Applied Chemistry Program, Graduate School of Advanced Science and Engineering,
Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
3KRWRG\QDPLFWKHUDS\ 3'7 LVDQH[WJHQHUDWLRQQRQLQYDVLYHWUHDWPHQWIRUYDULRXVW\SHVRI WXPRUV )XOOHUHQHV DQG WKHLU GHULYDWLYHV KDYH DWWUDFWHG VLJQLILFDQW DWWHQWLRQ DV
SKRWRVHQVLWL]HUV 36 RI3'7EHFDXVHRIWKHIRUPDWLRQRIDORQJOLYHGWULSOHWH[FLWHGVWDWHDQG
WKHSKRWRSURGXFWLRQDELOLW\RI526ZLWKKLJKTXDQWXP\LHOGV+RZHYHUWKHOLSLGPHPEUDQH
LQFRUSRUDWLQJ& /0,& VKRZHGYHU\ORZSKRWRG\QDPLFDFWLYLW\WRZDUG+H/DFHOOVXQGHUSKRWRLUUDGLDWLRQRYHUQPEHFDXVHOLJKWDEVRUSWLRQE\&EHWZHHQ௅QPLVWRRORZ
:H KDYH UHSRUWHG SUHYLRXVO\ WKDW D VROXWLRQ WR WKLV SUREOHP LV WKH FRH[LVWHQFH RI OLJKWKDUYHVWLQJ DQWHQQD PROHFXOHV DQG SULVWLQH & LQ OLSLG PHPEUDQH ELOD\HUV E\ D ELRPLPHWLF
SKRWRV\QWKHVLVDSSURDFK )LJD >@+RZHYHUWKHORFDWLRQRIWKHOLJKWKDUYHVWLQJPRLHW\LQ
WKH DQWHQQD PROHFXOHV H[LVWV LQ WKH QHLJKERUKRRG RI WKH OLSRVRPDO VXUIDFH ZKHUHDV & LV
ORFDWHGLQWKHK\GURSKRELFFRUHRIWKHOLSLGELOD\HU&RQVHTXHQWO\WKHORQJGLVWDQFHEHWZHHQ
DQWHQQDPROHFXOHVDQG&LVGLVDGYDQWDJHRXVIRUHQHUJ\WUDQVIHUEHWZHHQWKHVHPROHFXOHV:H
K\SRWKHVL]HWKDWHQHUJ\WUDQVIHUZRXOGEHLPSURYHGQRWLFHDEO\LIWKHORFDWLRQRI&FRXOGEHVKLIWHGWRWKHQHLJKERUKRRGRIWKHOLSRVRPDOVXUIDFH,QWKLVUHSRUWD&GHULYDWLYHZLWKDQDPPRQLXP PRLHW\ ZDV XVHG WR ORFDWH & LQ WKH QHLJKERUKRRG RI WKH OLSRVRPDO PHPEUDQH
VXUIDFH )LJ E  7KH SKRWRG\QDPLF DFWLYLW\ RI WKH /0,& GHULYDWLYH ZLWK DQ DQWHQQD
PROHFXOHZDVFRPSDUHGZLWKWKDWRI/0,&DQG/0,&ZLWKDQDQWHQQDPROHFXOH:HIRXQG
WKDWWKHSKRWRG\QDPLFDFWLYLW\RIWKH/0,&GHULYDWLYHZDVDSSUR[LPDWHO\WLPHVKLJKHUWKDQWKDWRISKRWRIULQZKLFKLVWKHPDLQGUXJFXUUHQWO\LQFOLQLFDOXVHDVDSKRWRVHQVLWL]HU>@
7KHVHILQGLQJVKDYHSRWHQWLDOO\LPSRUWDQWLPSOLFDWLRQVIRUWKHXVHRIIXOOHUHQHEDVHGPDWHULDOVLQELRORJLFDOPHGLFLQDODQGPDWHULDOVFKHPLVWU\DSSOLFDWLRQV)XUWKHUPRUH , ZLOO GHFODUH WKDW G\DG V\VWHPV RI &DQGSKRWRDQWHQQD PROHFXOH KDYH
JUHDWSRWHQWLDOIRUXVHLQWKHSKRWRG\QDPLFDOO\E
LQIOXHQFHGHOLPLQDWLRQRIEDFWHULDOFRQWHQW>@ D
1>@ $ ,NHGD 0 $NL\DPD 7 2JDZD 7 7DNH\D ACS
Med. Chem. Lett  >@ ' $QWRNX 6 6DWDNH 7 0DH . 6XJLNDZD +
)XQDEDVKL $ .XURGD $ ,NHGD Chem.-Eur. J.   >@'$QWRNX.6XJLNDZD$,NHGDChem.-Eur. J.
  >@5.DZDVDNL'$QWRNX52KGDNH.6XJLNDZD$
,NHGDWREHVXEPLWWHG

+& &+

/LSLG 'L, RU
'L'

1

1

+& &+Q 1
1&+ &+ &+ &O2 &+ &+ &+&&RUUHVSRQGLQJ$XWKRU$,NHGD
7HO)D[
:HEKWWSVLNHGDODEZL[VLWHFRPP\VLWH(PDLODLNHGD#KLURVKLPDXDFMS

1

+& &+1 ,

& GHULYDWLYH)LJ 6FKHPDWLF LOOXVWUDWLRQV D  & DQGE &
GHULYDWLYHLQOLSRVRPH'L,RU'L'DQGVWUXFWXUHVRIIXOOHUHQHVDQGSKRWRDQWHQQDPROHFXOHV

-2-


1S-3

                 B"5036"/","*504)*.".63" /50/*4*,074,*::046,&05"/*","4)*"+*8"3"*304)* /%0",64)**.03*05"8"5"04)*0*:"."$)*"/","546+*
";6)*,0"4&&54630))*3"4"8"6.*00.03*

'1#24.'/40(11-+'&5#/45.*83+%3#/&5%-'#2/)+/''2+/)853*5!/+6'23+48
5,50,#  #1#/

*'/34+454'(020-+&4#4'*83+%3 *'!/+6'23+480( 0,80#3*+7#  #1#/

'1#24.'/40(#4'2+#-3%+'/%'#/&/)+/''2+/) 0,80/34+454'0( '%*/0-0)8"0,0*#.#  #1#/

/34+454'0(#4'2+#-3425%452'%+'/%'+)*/'2)8%%'-'2#402'3'#2%*2)#/+9#4+0/ 35,5$#   #1#/
 *'2#&5#4'!/+6'23+48(02&6#/%'&45&+'3 35,5$#  #1#/

#4+0/#-'420-0)8/34+454'0(#1#/#4+0/#-/34+454'0(&6#/%'&/&5342+#-%+'/%'#/&'%*/0-0)8 35,5$#    #1#/

8*45&%#*-":&3(3"1)&/&4)084"7"3*&5:0'&-&$530/*$$)"3"$5&3*45*$4%&1&/%*/(0/*54*/5&3-":&358*45"/(-&%6&50.0*3<105&/5*"-)&8*5) =$"--&%5)&@."(*$"/(-&A*413&%*$5&%50130%6$&"/*40-"5&%'-"5#"/%3&46-5*/(*/&.&3(&%461&3$0/%6$5*7*5: !*/$&5)& 58*45 "/(-& 4&/4*5*7&-: "''&$54 5)& &-&$530/*$ 4536$563&4 *5 3&26*3&4 13&$*4& $0/530- %63*/(
4".1-&13&1"3"5*0/&/&3"--:4".1-&4"3&&7"-6"5&%#:03"/%"6-&7&-41&$5304$01:
 ! ."*/-: #&$"64& 0' 7&3: 4."-- 4*;& 0'  "3&" 6/"#-& 50 #& .&"463&% #:
."$304$01*$ .&5)0%4 65*-*;*/( 3": "/% &-&$530/ #&".4 05 0/-: 5)& 58*45 "/(-& #65 5)&
26"-*5: "/% $-&"//&44 0' 5)& */5&3'"$& "3& "-40 4*(/*'*$"/5 1"3".&5&34 4*/$& 5)& &-&$530/*$
1301&35*&4"3&.0%*'*&%5)306()*/5&3-":&3*/5&3"$5*0/)&3&'03&-"3(&"3&""/%$-&"/*/5&3'"$&4"3&%&."/%&%'03"/:163104&4*/$-6%*/(%&7*$&'"#3*$"5*0/&)"7&%&7&-01&%"%*3&$5
53"/4'&3.&5)0%0'5)&(308/(3"1)&/&4)&&540/*46#453"5&4*/7"$66.)&
(3"1)&/&&9)*#*56/*26& 9 #6''&3-":&30/*8)*$)&/"#-&4501&&-5)&4)&&50''.6$)
&"4*&3$0.1"3&%505)04&0/5)& ? 9 ?  =  #6''&3-":&30#4&37&%*/53"%*5*0/"--:
64&%5)&3."-%&$0.104*5*0/0'* ! ! " #/#341&    ! " #.'(62&5    ! ")-$)&.$&    
/11&20/.%).'43(/1#.#+#
&,   -#),23#.#+#.4$,+642(44#$*0

-3-

2S-1
Emergent transport phenomena at van der Waals interfaces
explored by MBEżMasaki Nakano1,2
1

QPEC and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
2
RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

Since the discovery of graphene, a family of layered materials with nanometer-scale
thickness called ‘2D materials’ and their integrated superstructures named ‘van der Waals(vdW) heterostructures’ have become an invaluable material platform for condensed-matter
research, providing intriguing properties and functionalities that are missing in their 3D bulk
counterparts. There, the most-frequently-used sample fabrication method has been ‘top-down’mechanical exfoliation combined with the pick-up and transfer methods, while ‘bottom-up’
molecular-beam epitaxy (MBE) should provide a complementary and unique approach in 2D
materials research. Successful examples are the application of MBE-grown monolayer films tospectroscopic studies like ARPES and STM/STS measurements that require large-areamonolayer films, unveiling fundamental aspects of a variety of 2D materials emerging at themonolayer limit. From materials science viewpoint, however, one of the biggest advantages ofthe MBE-based approach apart from large-area synthesis should be that we can design andcreate novel material systems that could not be achieved by simple exfoliation based on bulk
crystals, although such attempts are almost missing in this rising research field.
We have recently established a versatile route to layer-by-layer epitaxial growth of a wide
variety of 2D materials on insulating substrates by MBE [1], opening a door for exploration of
emergent transport phenomena arising with reducing thickness [2-6] even based on hardlycleavable [2-4] and/or thermodynamically-metastable [5, 6] compounds as well as at theinterface between dissimilar materials [7, 8]. In this presentation, we will introduce our recent
achievements in particular on the emergent transport phenomena at the vdW interfaces. The
first topic is for the vdW heterostructures composed of insulating 2D materials [7], where wefound emergent electrical conduction despite that the individual materials are highly insulating,which could be simply understood by taking into account the band alignment at the interface
and the relevant interface charge transfer. The second topic is for the vdW heterostructures madeof metallic 2D material and itinerant 2D ferromagnet [8], where we found significant
modulation of the magnetic properties including the magnetic anisotropy as well as thetransition temperature, which could be naturally understood by considering a new-type ofmagnetic proximity effect mediated by Zeeman-type spin-orbit interaction.
[1] M. Nakano et al., Nano Lett. 17, 5595 (2017); [2] Y. Wang et al., Appl. Phys. Lett. 113, 073101 (2018);[3] M. Nakano et al., Nano Lett. 19, 8806 (2019); [4] H. Matsuoka et al., Phys. Rev. Res. 2, 012064(R) (2020);[5] Y. Tanaka et al., Nano Lett. 20, 1725 (2020); [6] S. Yoshida et al., submitted;[7] Y. Kashiwabara et al., Adv. Funct. Mater. 29, 1900354 (2019); [8] H. Matsuoka et al., submitted.
Corresponding Author: M. Nakano
Tel: +81-3-5841-6871, Fax: +81-3-5841-6822,
Web: http://www.qpec.t.u-tokyo.ac.jp/nakano-lab/
E-mail: nakano@ap.t.u-tokyo.ac.jp

-4-


2S-2

*UDSKHQHR[LGHDVDVXSHUPDWHULDOż6KLQ\D+D\DPL1

Department of Chemistry, Faculty of Advanced Science and Technolory, Kumamoto
University, Kumamoto 860-8555, Japan
2
Institute of Industrial Nanomaterials (IINa), Kumamoto University, Kumamoto, 860-8555,
Japan,QDWLPHZKHQWKHUHLVDVWURQJGHPDQGIRULQQRYDWLRQLQHQHUJ\PHGLFDODQGHQYLURQPHQWDOLVVXHVFDUERQPDWHULDOVDUHEHFRPLQJLQFUHDVLQJO\YDOXDEOHGXHWRWKHLUPHWDOIUHHORZFRVWDQGOLJKWZHLJKWQDWXUH:HDUHIRFXVLQJRQJUDSKHQHR[LGH *2 DVDVXSHUPDWHULDO2ULJLQDOO\WKHIDEULFDWLRQRIJUDSKHQHZDVGRQHE\H[IROLDWLQJDQGWUDQVFULELQJJUDSKLWHZLWKDGKHVLYH
WDSHZKLFKLVDOHVVSURGXFWLYHDQGOHVVUHSURGXFLEOHPHWKRG2QWKHRWKHUKDQGWKHV\QWKHVLVRI*2E\FKHPLFDOPRQROD\HUH[IROLDWLRQHOHFWURFKHPLFDORUSXOVHGSODVPDV\QWKHVLVKDVPDGH
LWSRVVLEOHWRIDEULFDWH*2DQGLWVUHGXFHGIRUPU*2DWORZFRVWDQGLQODUJHTXDQWLWLHV2XUUHVHDUFKJRDOLVWRSUHFLVHO\FRQWUROWKHSURSHUWLHVRI*2U*2DQGWKHLUK\EULGVWRVROYHHQHUJ\PHGLFDODQGHQYLURQPHQWDOSUREOHPVLQFRRSHUDWLRQZLWKGRPHVWLFFRPSDQLHV,QDGGLWLRQ*2
DQGU*2DUHKLJKO\SUDFWLFDOPDWHULDOVWKDWZLOOWUXO\FRQWULEXWHWRWKHGHYHORSPHQWRIGRPHVWLF
LQGXVWU\)LJ  6WUXFWXUHRI*2DQGU*2

&RUUHVSRQGLQJ$XWKRU6+D\DPL
7HO)D[
:HEKWWSZZZVFLNXPDPRWRXDFMSaKD\DPLLQGH[KWPO(PDLOKD\DPL#NXPDPRWRXDFMS

-5-

3S-1
Active site of nitrogen-doped carbon catalysts for fuel cellżJunji Nakamura1
1

Faculty of Pure and Applied Sciences, Tsukuba Research Center for Energy Materials
Science (TREMS), University of Tsukuba. 1-1-1 Tennodai, Tsukbua 305-8573, Ibaraki, Japan
Nitrogen-doped graphitic carbons as
non-Pt catalysts for oxygen reduction
reaction (ORR) have been paid muchattention
inrecentyears
becausecommercialization of fuel cells requires lessexpensive and abundant catalytic materials.
Identification of the active site ofnitrogen-doped carbon materials for ORR isthus urgently required, but still under debate.
Currently, the debate focuses on whether theactive site is created by pyridinic N (Nbonded to two carbon atoms) or graphitic N(N bonded to three carbon atoms, also called
substituted N or quaternary N). To determine
the active site conclusively, we preparedmodel catalysts of highly oriented pyrolytic
graphite (HOPG) with pyridinic N(pyri-HOPG) or graphitic N (grap-HOPG).
The active sites and adsorption properties Figure.1Structural and elemental characterization ofwere examined by ORR and post-ORR four types of N-HOPG model catalysts and their ORR(A) Optical image of patterned
X-ray photoelectron spectroscopy (XPS). We performance.
edge-N+-HOPG. (B) The AFM image obtained from thehave thus determined the active nitrogen region indicated by the yellow rectangle in (A). (C) 3D
species in carbon [1,2]. The graphitic-N representation of (B). (D) Line profile of the AFM
dopingwas
performedbymild image obtained along the blue line in (B). (E) N 1s XPS
bombardment with a nitrogen ion beam. To spectra of model catalysts. (F) ORR results for model
prepare the pyri-HOPG samples, edge catalysts corresponding to (E). Nitrogen contents of themodel catalysts are shown as inset in (F).
patterning was first performed bybombarding the sample with an Ar+ ion beam through a slit-patterned Ni mask as shown in
Fig.1 A-D. The edged HOPG samples were then exposed to NH3 at 973 K. The catalytic
performances of the model catalysts were measured by cyclic voltammetry (CV) in acidic
electrolyte (0.1 M H2SO4). It was found that the pyri- HOPG model catalyst shows highactivity at high voltages, compared to the very low ORR activities of the N-free model
catalysts (Fig.1 E, F). Since the pyri-HOPG sample is nearly free of graphitic N, the ORR
results indicate that it is pyridinic N rather than the graphitic N that reduces the ORR
overpotential and creates the active site. It is thus concluded that the ORR active sites innitrogen-doped carbon materials are created by pyridinic N.
[1] D. Guo, R. Shibuya, C. Akiba, S. Saji, T. Kondo, J. Nakamura, Science, 351, 361 (2016).
[2] S. K. Singh, K. Takeyasu, J. Nakamura, Advanced Materials, 1804297 (2018).

-6-

3S-2
Electronic band structure and transport phenomena ingraphene with multiple layers
Ryuta Yagi
Graduate School of Advanced Science and Engineering, Hiroshima University, HigashiHiroshima 839-8530, Japan.

Since the discovery of graphene, a number of researches have been done to elucidate
fundamental physics and practical applications. Most of the researches on physical propertiesof graphene have been performed in mono- or bilayer graphene. While graphite, the opposite
limit of graphene with vast number of layers, has also been studied extensively to date, theproperties of a few to several layer graphene are not fully understood. New physical phenomena
and new practical applications are expected in this system. In this talk, experimental studies ofelectronic band structure and some transport phenomena, performed by using high-mobility
graphene sample, are presented. Landau levels that appear as quantum oscillations of resistivity
in magnetic field, reflect the electronic band structure. Maps of the resistivity as a function ofmagnetic field and carrier density (Landau fan diagrams) visualized detailed band structure
which is specific to specific number of layers and stacking [1]; the band structures were muchcomplicated than the well-known simplified band model based on a mass less band and massive
bands. Moreover, the band structure was drastically changed by a perpendicular electric field.
In particular, mini-Dirac cones were formed, and semi-metallic band structure tended todisappear [2, 3]. These were visualized on maps of resistivity as a function of perpendicularelectric field and carrier density. The mini-Dirac cones are essentially due to trigonal warpingof the band structure, which becomes increasingly important in graphene with multiple layers.
The Fermi surfaces are trigonally deformed circles, and therefore, the electron trajectories in amagnetic field become trigonally warped circles. This was observed via ballistic transport
experiments by using antidot lattices [4]. The effect of trigonal warping also emerged in a
specific resistivity peak structure in a moiré superlattice of h-BN-graphene heterostructure.
[1] R. Yagi et al., Sci. Rep. 8, 13018 (2018).
[2] T. Hirahara et al., Sci. Rep. 8, 13992 (2018), T. Nakasuga et al. Phys. Rev. B 99 035440 (2019).
[3] K. Horii et al., Phys. Rev. B 100, 245420 (2019).
[4] T. Oka et al., Phys. Rev. B 99, 035440 (2019), S. Tajima et al., J. Phys. Soc. Jpn. 89, 044703 (2020).
Corresponding Author: R. Yagi
Tel: +81-82-424-7041
Web: http://home.hiroshima-u.ac.jp/~yagi/index.html
E-mail: yagi@hiroshima-u.ac.jp

-7-

3S-3
High resolution electron micrographs of serial brain tissue sections on
conductive carbon nanotube coated PET tape and neural microcircuit analysis
Yoshiyuki Kubota1,2
1Division of Cerebral Circuitry, National Institute for Physiological Sciences, Okazaki444-8787, Japan2
Department of Physiological Sciences, SOKENDAI, Okazaki 444-8787, JapanThe electron microscopy (EM)-based reconstruction of neuronal circuits from serial
ultrathin sections has attracted considerable recent attention, despite the emergence of superresolution microscopy, because EM is a reliable method for the diverse-scale analysis ofdense nanoscale details in biological structures. Here, we focus on the automatedtape-collecting ultramicrotome (ATUM) method which allows the collection of many serial
ultrathin sections of consistent quality quickly and automatically by producing ultrathin
sections on a tape that can be repeatedly imaged using SEM. Currently, the most commonlyused tape for ATUM is carbon coated (cc)-Kapton tape (polyimide film, DuPont, Wilmington,
USA), but it has deficiencies due to a relatively high sheet resistance (19-6530 Mohm/sq),
non-uniform carbon coating that causes mottled surface resistance, and scratching. Moreover,there is no assurance of a regular supply of high-quality cc-Kapton tape due to inconsistentindustrial production procedures. Therefore, an improved alternative tape would have avaluable role the field of ATUM-based EM. In this study, we address these issues byintroducing an improved tape and tissue staining protocol. We screened candidates and foundthat plasma-hydrophilized-carbon nanotube (CNT) tape is optimal due to its extremely highsurface conductivity (240-500 ohm/sq) and low endogenous signal, and it can provide highquality images of tissue sections with SEM. The ATUM-SEM method impressively alters
current research strategy using an electron microscope on functional architecture of the brain
microcircuit.
[1] Kubota Y et al., Front. Neural Circuits,fncir.2018.00098 (2018)[2]?6HP&R*N Q-:G@
DI04;>Y(S!'% G=A#K T3G2FU
+ 9L G8, JIV1.
"5X)MC7BOWE$</p158-164,
ISBN 978-4-7581-0372-5 (2018)[3] Kubota Y et al., Nature Communications, 9,437 (2018)

Corresponding Author: Y. Kubota
Tel: +81-564-59-5282, Fax: +81-564-59-5284,
E-mail: yoshiy@nips.ac.jp

Figure 1 Pipeline of the ATUM-SEM method

-8-

3S-4
Nanoscale optical and vibrational spectroscopy of low-dimensional
materials in electron microscopeżRyosuke Senga1, Kazu Suenaga1, Thomas Pichler2
1

Nanomaterial research institute, AIST, Tsukuba 305-8565, Japan
2
Faculty of Physics, University of Vienna, Vienna, Austria

Excitations of quasiparticles govern physical properties of low-dimensional materials.
Especially their behaviors at non-perfect structures like boundaries, edges, defects or irregular
stacking sequence are undoubtedly important to understand the performance of nanodevices
consisting of nanomaterials. However, such local information has been usually averaged inconventional inelastic scattering techniques using x-ray, neutron and light sources because of
their diffraction limit. Here we demonstrate the nanoscale optical and vibrational
spectroscopy of 1D/2D materials by using a monochromatic electron source mounted in ascanning transmission electron microscope. Its energy resolution, better than 30 meV, allows
to access the quasiparticle excitations (i.e. phonon, exciton and plasmon) of low-dimensional
materials by electron energy-loss spectroscopy (EELS). The spatial and momentum
resolutions balance each other and can be finely tuned with magnetic/electrostatic lenses. For
instance, an atomically thin probe can be formed with an integration of large momentum
space. This allows us to extract local information from single defects. Indeed, we havesuccessfully measured the optical gap transitions from a defect of an individual
semiconducting carbon nanotube [1,2]. In contrast, an electron probe with a higher
momentum resolution can provide a full phonon dispersion of 2D materials (Fig. 1) such as
hexagonal
boron
nitride or graphene ata few tens nanometerscale [3]. Thus, thepropagation of eachphonon mode at
defects such as edges
in graphene has been
unambiguously
visualized. This local
spectroscopy with alarge flexibility will
open up a wide Fig. 1 Experimental setup for the momentum-resolved EELS and examples ofpossibility to unravel momentum-resolved EEL spectra taken at q=2.25 and 4.00 Å-1 along the GMGM
the defect physics of direction. The spectrometer entrance aperture is placed at a given position in thequantum matters.
diffraction plane including the first, second, or third Brillouin zones.
[1] R. Senga, T. Pichler and K. Suenaga Nano Letters 16, 3661 (2016).
[2] R. Senga et al., Nano Letters 18, 3920 (2018).
[3] R. Senga et al., Nature 573, 247 (2019)
Corresponding Author: R. Senga
Tel: +81-29-862-6518
E-mail: ryosuke-senga@aist.go.jp-9-~ Memo ~- 10 -

୍⯡ㅮ₇
General Lecture

1 – 1 䡚 1 – 11
2 – 1 䡚 2 – 12
3 – 1 䡚 3 – 12

1-1
Linear Temperature Dependence of Nanotube Yarn ResistanceżTakumi Inaba1, Takahiro Morimoto1, Satoshi Yamazaki2, and Toshiya Okazaki1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology AIST, Tsukuba 305-8565, Japan
2
Research Association of High-Throughput Design and Development for
Advanced Functional Materials (ADMAT), Tsukuba 305-8565, Japan

Carbon nanotube yarns (CNT-yarns) are expected to be used for light weight and highconductive electric cables. Specific electronic conductivity of novel CNT-yarns is close to thatof cupper [1]. However, no electronic conduction models were proposed for a temperature range
as wide as possible (e.g. 1-1300 K), which makes ambiguity remained in the guidelines tofurther increase the electronic conductivity. This is likely due to absence of a model for a linear
temperature dependence of the resistance that is observed near room temperature and has anegative temperature coefficient. The linearity is considered unique from a general materialscience perspectives. Therefore, the identification of the model is of great importance forstudies of CNT as well as general material science.
Figure 1(a) shows a resistance-temperature plot acquired from a CNT-yarn made of multiwalled carbon nanotubes (MWCNTs). The solid line the result of curve fitting with the function
R(T)҃Tȕ. The curve fitting resulted in ȕ=1.00, and showed the clear linearity. Although a modelof the linearity for CNTs was not identified, there exist a theoretical study that predict thelinearity for graphene [2], in which the linearity was attributed to the scattering by the exchange
field that Friedel oscillations cause. Presumably, relatively flat regions around outermost wallsof MWCNTs (see Fig. 1(b)) in the yarn can realize graphene-like conduction paths and caused
the linearity.
We will discuss adaptation of the model to CNT-yarns with showing the results of few-walled
CNTs, magnetoresistance measurements, and defects introduction.
This presentation is based on results obtained from a project, JPNP16010, commissioned by
the New Energy and Industrial Technology Development Organization (NEDO).
[1] D. E. Tsentalovich, et al., ACS Appl. Mater. Interfaces 9, 36189 (2017)[2] V. V. Cheianov, et al., Phys. Rev. Lett. 97, 226801 (2006)
Corresponding Author: T. Inaba, E-mail: takumi.inaba@aist.go.jp

FIG. 1. (a) Normalized resistance of the yarn as a function of temperature. (b) Cross sectional STEM image ofthe MWCNT comprising the yarn.

- 11 -

1-2
Indirect to direct band gap crossover of single walled MoS2 nanotubesżKaoru Hisama1, Mina Maruyama2, Susumu Okada2, Shohei Chiashi1and Shigeo Maruyama1
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2

Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan

Molybdenum disulfide (MoS2) is known to form tubular structure, owing to its honeycomb
covalent network with three-atom thickness. Semiconducting electronic structure of monolayer
sheet of MoS2 also makes MoS2 nanotubes (MoS2 NTs) semiconductors irrespective of theirdiameter and helicity. Several theoretical works predicted that MoS2 NTs have indirect bandgaps except with zigzag chiral indices [1-3]. This indirect band gap structure is ascribed to strain
effect due to curvature, because the band edge alignment of MoS2 NTs asymptoticallycorresponds to the direct band gap at the K point of monolayer MoS2 sheet, with increasing
their diameter. Thus, in this work, we aim to reveal this indirect to direct band gap crossover ofarmchair MoS2 NTs in a wide diameter range using the density functional theory.
Although a small diameter (12,12) NT is a semiconductor with an indirect band gap between
ƥ and approximately k = 2ʌ/3 where K point in 2D BZ is folded [Fig. 1(a)], a large diameter(30,30) NT is a semiconductor with a direct band gap at approximately k = 2ʌ/3 [Fig. 1(b)]. To
study the critical diameter at which the band gap crossover occurs, we investigated the energy
difference between the highest occupied states at near the ƥ point, ‫ܧ‬଴ୌ୓ and at k = 2ʌ/3,‫ܧ‬௄ୌ୓
of MoS2 NTs in terms of their diameter. Figure 1(c) showed that the crossover occurred at thediameter of approximately 5 nm. This result suggests that photoluminescence is observed in
MoS2 NTs with the diameter 5 nm or larger.
D

F

E

0

HO

E K í E 0 [eV]

0.2

HO

í0.2

í0.4

0

0.002
2
í2
1/D [ ύ ]0.004

Figure 1 Electronic structure of (a) (12,12) and (b) (30,30) MoS2 NT. (c) ‫ܧ‬௄ୌ୓ െ‫ܧ‬଴ୌ୓ as a function ofsquared inverse of diameter. Dotted line in (c) shows the value of 2D monolayer MoS 2.
[1] G. Seifert, et al., Phys. Rev. Lett. 85, 146 (2000). [2] D. B. Zhang, et al., Phys. Rev. Lett. 104, 065502 (2010).
[3] N. Zibouche et al., Euro. Phys. J. B, 85, 49 (2012).
Corresponding Author: Susumu Okada

E-mail: sokada@comas.frsc.tsukuba.ac.jp- 12 -

1-3
Diameter-dependent Photoluminescence Properties in Color Centers of AirSuspended Single-Walled Carbon Nanotubes
ż Daichi Kozawa1, Xiaojian Wu2, Akihiro Ishii1,3, Jacob Fortner2, Keigo Otsuka3, Rong
Xiang4, Taiki Inoue4, Shigeo Maruyama4,5, YuHuang Wang2,6, Yuichiro K. Kato1,3
1

Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics
Department of Chemistry and Biochemistry, University of Maryland, College Park
3
Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research4
Department of Mechanical Engineering, The University of Tokyo
5
Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science andTechnology (AIST)
6Maryland NanoCenter, University of Maryland, College Park
2

Color centers in single-walled carbon nanotubes are of interest because of their singlephoton emission at room temperature in the telecom range [1, 2], but the lack of vapor-phasereaction route for forming the color centers hinders the use of the excellent optical propertiesof air-suspended carbon nanotubes. We herein demonstrate the functionalization of airsuspended carbon nanotubes using iodobenzene as a precursor. We rationally design thechemical reaction procedure without compromising the suspended structure. Formed phenylgroup serves as a color center and exhibits localized exciton emission peaks E11* and E11*- inaddition to the free exciton emission peak E11. We characterize representative 12 chiralities toreveal the diameter-dependent reactivity and optical property of the color centers. We
quantitatively describe the reactivity, where a strain of nanotube curvature promotes thereaction. The trapping potential of E11* and E11*- excitons also shows the diameter dependence,
which we discuss in the presentation. These findings should lead to further development of
quantum photon sources that utilize color centers in carbon nanotubes.
This work was supported in part by RIKEN (Special Postdoctoral Researcher Program), MIC(SCOPE 191503001), JSPS (KAKENHI JP15H05760, JP18H05329, 20K15112, 20K15137,
20H02558), and MEXT (Nanotechnology Platform). We thank the Advanced Manufacturing
Support Team at RIKEN for technical assistance.
[1] A. Ishii, X. He, N. F. Hartmann, H. Machiya, H. Htoon, S. K. Doorn, and Y. K. Kato, Nano Lett. 18, 3873
(2018).
[2] X. He, N. F. Hartmann, X. Ma, Y. Kim, R. Ihly, J. L. Blackburn, W. Gao, J. Kono, Y. Yomogida, A. Hirano,
T. Tanaka, H. Kataura, H. Htoon, and S. K. Doorn, Nat. Photonics 11, 577 (2017).
Corresponding Author: Y. K. Kato
Tel: +81-48-462-1449,
Web: http://katogroup.riken.jp/en/
E-mail: yuichiro.kato@riken.jp- 13 -

1-4
Energetics and electronic structure of bilayer graphene intercalating
buckybowls
 Mina Maruyama, Susumu Okada
Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
Atomic layer materials opened new paradigm of science and technology of intercalation
compounds where the thickness and constituent materials/layers are arbitrarily tailored.
Because of interaction between constituents, physical and chemical properties of suchcompounds exceeded the simple sum of those of each constituent material. Bilayer graphene
is an ultimate host material to form such intercalation compound by intercalating guest
materials into the two-dimensional space with nanometer thickness. In such confinednanospace, guest materials occasionally possessed unusual geometric and electronic structures
those are absent in their bulk phases. In this work, we elucidate energetics and electronic
structure of bilayer graphene intercalating sumanene [Fig. 1] to investigate the bowl-to-flat
conformation change of sumanene between graphene layers, using the density functional
theory with the generalized gradient approximation with van der Waals correction.
Our calculation shows that sumanene retained the bowl shape as its ground state
conformation between graphene layers of which total energy is lower by approximately 0.4
eV/molecule than that with flat molecular conformation [Fig. 2]. By analyzing the energy
potential landscape, we found that sumanene turned into flat conformation by applying
pressure of 0.6-0.8 GPa normal to graphene layer, depending on the interlayer stacking.
Sumanene molecule with bowl shape leads to electron and hole doping into bilayer grapheneowing to the strong electron polarity of molecule arose from pentagonal ring and edge C-H
bond.
(a)

(b)

Fig. 1 Geometric structures of (a) sumanene molecule and (b)Fig. 2 Total energy of sumanene

sumanene intercalated bilayer graphene.

intercalated bilayer graphene as afunction of interlayer spacing.

Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924,
E-mail: mmaruyama@comas.frsc.tsukuba.ac.jp- 14 -

1-5
           
7  %61'%!+'$%0+%0 +/$%.+*!'++)+$%.+0/1'* +/$%'%0+!$# !$%!"#&  $%!"#&    .,$!*!%/+*!+"0$!0+,%(**+)0!.%(/00.0%*#%*0!*/!00!*0%+*//*!40#!*!.0%+*
!(!0.+*%)0!.%(/ 1!0+%0//1,!.%+.!(!0.%(+* 10%2%05)!$*%((5"(!4%(!/0.101.!
*  $%#$ +,0%( 0.*/,.!*5$%(! #.,$!*! $/  %)!*/%+*( /$!!0 /0.101.! *  /$+3/)!0((% (%'! !$2%+1. %0 $/ !!* %/+2!.!  0$0 #.,$!*! **+.%+*  $/ "%*%0!
* #, 3$%$ * ! +0%*!  5 )'%*# #.,$!*! %*0+  %)!*/%+*( /0.101.! $%/
%/+2!.5) !+*/,%1+1/)0!.%()%*(5%*/!)%+* 10+. !2%!"%!( .+1* 0$!
3+.( 
+".3!$2!/1!! ! "+.0$!"%./00%)!%*0$!%*0!#.0! /5*0$!/%/ +"/1/,!* ! 5+)%*%*#+1.+.%#%*(,(/)  ,.+!// * 0$!+.%#%*(% !+"1/%*#0$!
**+./0.101.!/0(5/01.0$!.)+.!,.!2%+1//01 %!/$2!.!2!(! 0$0!$2!//-1*01) +0+3!2!.0$!-1*01) +0/%6!%/)1$/)((!.0$*0$0+"3$+(!
%* %0%*#/,+*0*!+1/ !"!0/)5!0$!+.%#%*+"-1*01) +0!*!%0%/2!.5 %""%1(00+
+*0.+(0$! +0/%6!*  !*/%053$%$%/.%0%(/1&!0"+.0$!"101.!,,(%0%+*/-1*01)
!2%!/ 
$!/%),(!/0350++*0.+(0$!/%6!*  !*/%05+"
-1*01) +03%0$%*%/)'%*#3$+(!//%*#(! -1*01) +0 $!* 3! 00!),0!  0+ +*0.+(0$! /%6! *  !*/%05 +"  -1*01) +0/ 5
+,0%)%6%*# 0$! 1*%-1! **+. /0.101.! * 
/5*0$!/%/ +* %0%+*/ /!  +* 0$! /5/0!)0%%*2!/0%#0%+*/ %0 %/ "+1*  0$0 ,!.%+ % +1(+)
+/%((0%+** (!. +1(+) %)+* "!01.!3/
+/!.2!  0 .5+#!*% 0!),!.01.!    %#
$! /%6! +" -1*01) +0 3/ !/0%)0!  ".+) 0$%/
+1(+) %)+*  "!01.! 0 3/ "+1*  0$0 0$!-1*01) +0 /%6! %/ ()+/0 /)! 3%0$ 0$0 +" 0$!
3$+(!%* %0%*#0$03$+(!.!#%+*3/ ,*   :3,&$/ 27/20% ',$021' )($674( 2)
 '(8,&( 0($574(' $6 &4:2*(1,&
1/! //%*#(!-1*01) +0%*!0$!/%6!+"3$+(! 6(03(4$674(  *!+*0.+((! 5%*%0%(**+./0.101.!
+1. )!0$+  * ! 1/!"1( 0+ ,,(5 "+. 0$! "101.!
-1*01) !2%!,,(%0%+*/3%0$/
" # $62$1'$6$.(:$0$$674($126(&+12/2*:   " #7;7., $1(.2!+,%76$+12!$(.$9$$1' $62$674(20071,&$6,215   " #7;7.,*74$ $1(.2$1' $62&,(16,),&(32465    " # $62$1'$6$.(:$0$$12    
244(5321',1*76+24(2(/     
0$,/0,;7.,5(25 '&62+2.7$&-3

- 15 -

1-6
High-order mode operation of graphene mechanical resonatorżHirofumi Ikemoto,1 Kaito Nakagawa,1 Taichi Inoue,1 Kuniharu Takei,1 Takayuki Arie,1 Seiji
Akita1 
1

Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan

Mode coupling of nano-electro-mechanicalresonators (NEMR) are one of emerging components
for ultralow power information processing
mimicking the superposition of states. Here, weinvestigate the higher mode oscillation of asuspended graphene NEMR (G-NEMR) with ametal local gate structure.
The sample fabrication procedure is as follows.
First, a Cr / Au as a gate electrode was deposited on
n+Si/SiO2 substrate followed by spin-coating of
spin-on-glass (SOG) as an additional oxide layer.
Then, the graphene synthesized by the CVD wastransferred on it and was etched by O2 plasma toform the graphene stripe with the width of 2 Pm. To
form the suspended ribbon structure, the SOG under
the graphene was etched by BHF and dried using thesupercritical drying method to fabricate 2 × 2 ȝm2 GNEMRs with a local metal gate (Fig. 1.).
In the G-NEMR, with the channel length L = 2 ȝmusing the global gate structure (without the metallic
local gate), the resonance was observed at VGS > 12
V (Fig. 2.). However, in this structure, it was difficult
to measure higher mode resonance above 100 MHz
even when a back gate voltage of VGS = 30 V wasapplied because of the large parasitic capacitanceand high impedance of n+Si against the higher
frequency. On the contrary, in this study, the same
size G-NEMR with the local gate showed theresonance mode higher than 100 MHz at VGS = 30 V
(Fig. 3.). This is due to the successful decrease of the
impedance and parasitic capacitance of the gateelectrode. Thus, we have successfully measured thehigher mode resonance on the G-NEMR with themetallic local gate.
Acknowledgements This work was partially supported by
KAKENHI Grant Numbers 15H05869, 16H00920, 16K14259,
16H06504, and 17H01040.
Corresponding Author: S. Akita, Tel: +81-72-254- 9261, Email: akita@pe.osakafu-u.ac.jp- 16 -

Fig. 1. SEM image of a double clamped
graphene resonator using local gate
(2 × 2 ȝm2)

Fig. 2. Frequency dependence of gate
voltage. (Global gate: 2 × 2 ȝm2)

Fig. 3Frequency dependence of gate
voltage. (Local gate: 2 × 2 ȝm2)

1-7
One dimensional hetero-junction diodeżYa Feng, Henan Li, Taiki Inoue, Shigeo Maruyama
Department of Mechanical Engineering, School of Engineering, The University of Tokyo,
Tokyo 113-8656, JapanThe synthesis of one-dimensional van der Waals heterostructure was realized recently [1],which opens up new possibilities for potential applications in electronics and optoelectronics
as the two-dimensional counterpart has demonstrated extensively. The natural doping results in
p-type carbon nanotube transistors [2], while n-type for molybdenum disulfide transistors [3].
Therefore, the coaxial one-dimensional heterostructure of single walled carbon nanotube(SWNT)-boron nitride nanotube (BNNT)-molybdenum disulfide nanotube (MoS2NT) would
form a p-i-n junction; and if opposite potential polarity is applied on SWNT and MoS2NT
respectively, as shown in the schematic of Fig. 1, the forward bias would allow the flow ofcurrent while the reverse bias would block it. The current work is providing such a onedimensional heterojunction diode as demonstrated in the graph of Fig. 1.

Figure 1 The top panel illustrates schematic of the device; the bottom graph demonstrates rectifying effectand SEM image of the device is shown in the inset.
[1] R. Xiang et al., Science, 367, 6477 (2020).
[2] C. Qiu et al., Science, 355, 6322 (2017).
[3] S. Desai et al., Science, 354, 6308 (2016).

- 17 -

1-8
Polyaromatic Anthracene Nano-tweezer on Semiconducting Carbon
Nanotubes for Growth and Bridging of Perovskite Crystal Grains in
Perovskite Solar Cells
żHao-Sheng Lin 1, Il Jeon 1, Yutaka Matsuo 1, Shigeo Maruyama 1
1

Department of Mechanical Engineering,The University of Tokyo, Tokyo 113-8656, Japan

Polyaromatic anthracene, which contains a bent polyaromatic group on one end and afunctional group on the other end, has been reported to clench SWNTs. While the
SRO\DURPDWLF HQG LQGXFHV VWURQJ ʌ-ʌ LQWHUDFWLRQ ZLWK WKH 6:17V WKH IXQFWLRQDO HQG FDQ
easily be modified chemically. In our group, the modified polyaromatic anthracenes wereused as charge-transporting layers in optoelectronics, harnessing their bandgaps and highmobility arising from the conjugated sp2 bonds. Hence, we designed and synthesized
4,6-di(anthracen-9-yl)-1,3-phenylene bis(dimethylcarbamate) (DPB), which is essentiallypolyaromatic anthracene with two urea-analogues functional groups. Subsequently, we usedthem as new surfactants for s-SWNTs in the PSC application. DPB successfully attached tos-SWNTs and replaced DOC surfactants as confirmed by photoluminescence (PL) andUV-visible absorption spectroscopy (UV-Vis). DPB-attached s-SWNTs showed much higher
solubility in both DMF and dimethyl sulfoxide (DMSO) than the DOC-attached s-SWNTs.
Accordingly, higher concentration of s-SWNTs could be added to the perovskite precursor
solution. The DPB on SWNTs expectedly manifested a stronger interaction on Pb2+ than DOC
owing to the strongly electron donating nature of the lone pair electrons on the carbamate
group enhanced by its configurational orientation facing outwards. DPB-attacheds-SWNT-added perovskite films exhibited excellent charge-selectivity and reduced charge
trap density. The suitable molecular energy levels and higher mobility of DPB compared with
DOC led to higher device performance. DPB-attached s-SWNTs-added PSCs exhibited a PCEof 20.7%, which is higher than those of DOC-attached s-SWNT-added PSCs (19.7%) andpristine PSCs (18.4%). All of the three photovoltaic parameters, namely, high short-circuitcurrent density (JSC), open-circuit voltage (VOC), and filling factor (FF) contributed to the highpower conversion efficiency (PCE) of the DPB-attached s-SWNTs-added PSCs. The high JSC
came from the large perovskite crystal size of over 500 nm. The high VOC came from strong
passivation effect of the DPB-attached s-SWNTs. The high FF came from the improved
carrier mobility and charge selectivity of DPBs on s-SWNTs.

Corresponding Author: S. Maruyama
Tel: +81-3-5841-6408
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 18 -

1-9
Aligned carbon nanotube/polymer composite films for high thermal
diffusivityżMaireyee Bhattacharya, Manish Pandey, Ryo Abe, Naofumi Okamoto, Yuki Sekimoto,
Masakazu Nakamura
Division of Materials Science, Nara Institute of Science and Technology,
8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Isolated carbon nanotubes (CNTs) exhibit exceptionally high electrical, mechanical, andthermal properties [1, 2]. But the practical application of individual CNTs is limited by thedifficulties of handling them at nanometer scale. CNT networks at bulk, on the other hand, aregenerally random. Therefore, a technique is highly sought after that can help retain the
intrinsic anisotropic properties of single CNTs at bulk by enforcing alignment among them in
the CNT network.
Recently, we reported a new method of fabricating scalable ribbon-like CNT/polymer
composite films using a programmed robotic dispenser [3]. This method can easily produce
controlled orientation of the CNTs in the CNT/polymer composite along the drawing directionof the ribbon. In this work, we conducted several investigations related to the optimization of
the controlling factors that were crucial to improve the alignment and will be reported indetail. We have found that the choice of substrate, its surface energy and casting parameters
play crucial role. It is proposed that during the flow of the CNT polymer dispersion throughthe narrow needle, the shear stress at the inner wall of the needle tends to direct thelongitudinal axis of the CNTs parallel to the flow direction. The dispersion is then dispensed
on to a suitable substrate where the streamlined orientation is preserved. The effect of various
drawing conditions on this orientation control mechanism will also be discussed. The degreeof orientation was evaluated using polarized Raman mapping. The axial alignment of CNT
bundles along the drawing direction was further confirmed by scanning electron microscope
images over the surface as well as deeper inside the film. Finally, the effect of alignment on
thermal diffusivity of CNT ribbons will also be reported.
This work was supported by JST CREST Grant Number JPMJCR18I3, Japan.
[1] Shokrieh et al. Mech Compos Mater 46, 155 (2010).
[2] Z. Han, Alberto Fina, Prog. Polym. Sci. 36, 914 (2011).
[3] Pandey et al. Appl. Phys. Express 13, 065503 (2020).
Corresponding Author: M. Nakamura
Tel: +81- 743-72-6031, Fax: +81-743-72-6047,
E-mail: mnakamura@ms.naist.jp- 19 -

1-10
Gas-phase growth and localized deposition of highly crystalline carbon
nanotubes using a microplasma reactorżTakashi Tsuji1, Yoshiki Shimizu2,3, Jaeho Kim4, Hajime Sakakita4, Kenji Hata1, Don N.
Futaba1, Shunsuke Sakurai1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Ibaraki 305-8565, Japan
2
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Ibaraki 305-8565, Japan
3
AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory(OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology(AIST), Kashiwa, Chiba 227-8589, Japan
4
Innovative Plasma Processing Group, Research Institute for Advanced electronics andPhotonics, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki
305-8568, Japan
Physical vapor deposition (PVD) process based on plasma technology such as arc discharge[1] and thermal plasma jet [2] has enabled the production of highly crystalline carbon nanotubes(CNTs). The PVD process operates by generating high temperature (> 4000 K) which is used
for the vaporization of the solid feedstock and catalyst particle nucleation, and the CNTs
precipitate during the cooling of the ambient gases at ~1000í2000 K [3]. Compared to thechemical vapor deposition process, temperature control of the CNT growth zone is not as direct
and simple. In addition, plasma-based growth reactor is large, and requires large amounts ofpower (> 1 kW), therefore, downsizing this technology would be beneficial for the developmentof new type of plasma-based CNT growth methods, where gas temperature can be controlled
to roughly match the CNT growth temperature (1000í2000 K).
In this study, we have developed a compact, microplasma-assisted gas-phase CNT growthmethod which enables the localized deposition of high quality CNTs. By utilizing a
microplasma generated by ultrahigh frequency (< 40 W) in a ceramic tube (i.d.: 0.8 mm) andflowing catalyst precursor (FeCp2) and carbon feedstock (CH4), we demonstrated that highly
crystalline CNTs possessing an average diameter of ~2 nm and average length of ~2 ȝm could
be grown in gas-phase. The Raman G/D-ratio was measured to exceed 100. In addition, throughthis approach, the growth rate was estimated to be more than 1000 ȝm/s, which ranks among
the highest for CNT growth. These results demonstrate that microplasma reactors can serve as
an efficient reaction hub for each of the necessary steps for gas phase CNT growth:decomposition of catalyst precursor and carbon feedstock, nucleation of the Fe catalyst
nanoparticles, and nucleation and growth of the CNTs. Furthermore, being in gas phase andchanneled through a small diameter ceramic tube, the grown CNTs could be localized onto asubstrate located downstream in the reactor.
[1] C. Journet et al., Nature, 388, 756 (1997).
[2] K. S. Kim et al., J. Phys. D. Appl. Phys., 40, 2375 (2007).
[3] M. Kundrapu et al., IEEE Trans. Plasma Sci., 39, 2876 (2011).
Corresponding Author: T. Tsuji
Tel: +81-29-861-0254, Fax: +81-29-861-4851
E-mail: takashi.tsuji@aist.go.jp- 20 -

1-11
Real-time Video Imaging ofa Shuttling Fullerene Molecule in a Vibrating Carbon Nanotube
 Toshiki Shimizu1, Dominik Lungerich1, Joshua Stuckner2, Mitsuhiro Murayama2, Koji
Harano1, and Eiichi Nakamura1
1

Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 1130033, Japan
2
Materials Science and Engineering Department, Virginia Tech, Blacksburg, VA 24061, USA
Time-resolved imaging of molecular dynamics is of great importance to unveil behavior of
an individual molecule in the nanoscale system and thus to apply for nanodevices. Especially,
the recent advances in atomic-resolution electron microscopy is tremendous and it is one of thebest approaches to observe molecules in situ, whose mechanics is non-linear, stochastic, andnon-repeatable. However, conventional dynamic imaging for nanoscale mechanical events hasachieved time resolution only down to tens of milliseconds. Here, we succeeded in recordingof world’s fastest video of a single molecular shuttle at the time resolution of sub-millisecond.
[60]fullerenes (C60) encapsulated in carbon nanotubes (CNT) [1] reacted each other underelectron beam to form a C60 dimer or oligomer, and it moved back and forth in CNT during
TEM observation. In this work, we analyzed these mechanical motions more deeply with submillisecond sub-Å precision in situ video imaging [2]. Rich molecular dynamics of a single
fullerene molecule shuttling, rotating, and interacting with a vibrating CNT were revealed byusing an electron microscope, a fast camera, and a denoising algorithm [3]. As a result, wefound the molecule and the CNT container as a whole behave as a mechanical coupled oscillator,
where the molecular motion is coupled with the mechanical motion of CNT.
0.625 ms/frame
w/o denoising

1nm

0.625 ms/frame
w/ denoising

Dimer motion (4.375 ms/frame, w/ denoising)

1.875 ms/frame
w/ denoisingsuperimposition

denoising
3.0
2.0
1.0
0
0.2

300

0.1

10 ms

0.05

0.1

0

0

-0.05

-0.1

time (ms)350

200 400 600 800 1000

300

0time (ms)Fig. 1 TEM imaging and analysis of shuttling [60]fullerene dimer in carbon nanotube.
[1] S. Okada et al., J. Am. Chem. Soc., 139, 18281 (2017).
[2] T. Shimizu et al., Bull. Chem. Soc. Jpn. (2020). doi: 10.1246/bcsj.20200134[3] J. Stuckner et al., Microsc. Microanal. (2020). doi: 10.1017/S1431927620001750
Corresponding Author: K. Harano/ E. Nakamura
Tel: +81-03-5841-4369, Fax: +81-03-5841-4369
Web: http://www.chem.s.u-tokyo.ac.jp/~common/NakamuraLab.html
E-mail: harano@chem.s.u-tokyo.ac.jp / nakamura@chem.s.u-tokyo.ac.jp- 21 -

400

-0.1

-0.2

290 ms

250
200

CNT
dimer
vibration translation
(nm)
(nm)

Model of
C60 @ CNT

2-1
Electronic properties of graphene with structural defects arranged
periodically Yuta Taguchi1, Susumu Saito1
1

Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku,
Tokyo 152-8551, Japan

Graphene, a single metallic sheet of a hexagonal carbon network, has attracted muchattention since it possesses unique properties such as high carrier mobility and high heat
conductivity. However, pristine graphene cannot be used for ordinary electronic devices wherea high on/off ratio is required because it does not have a band gap. To expand the possibility of
application, modifications of the geometric structure of pristine graphene should be promising
methods since previous theoretical studies show that periodically modified graphene sometimes
has a band gap[1,2].
We study the electronic properties of graphene with structural defects in the shape oftruncated triangles arranged periodically using the local density approximation (LDA) within
the framework of the density-functional theory (DFT). We consider two sizes of structuraldefects(Hole1 and Hole2) and arrange either Hole1 or Hole2 defects in the system[Fig. 1 , Fig.
2]. There are two structural defects in one supercell and we consider one arrangement ofdefects: sides of regular triangles face each other. We find that all systems in this study should
be semiconductors with band gap of 0.1 eV to 1.3 eV. We also find that nearly flat bands(dispersion is less than 0.05 eV) usually appear at the valence band top or the conduction band
bottom in the electronic structure of the system in which Hole1s are arranged [Fig. 1]. The
existence of nearly flat bands implies the possibility of ferromagnetic behavior if property
doped with carriers. In the electronic structure of the system in which Hole2s are arranged,
nearly flat bands hardly appear at the valence-band top nor the conduction-band bottom[Fig. 2].
In this presentation, details of the electronic structures and spatial distributions of the valenceband top and conduction band bottom will be discussed.

Figure 1 Super honeycomb lattice arrangement of Hole1s.

Figure 2 Super honeycomb lattice arrangement of Hole2s.

[1] T. Matsumoto and S. Saito, J. Phys. Soc. Jpn. 71, 2765 (2002)[2]M. Sakurai, Y. Sakai, and S. Saito, J. Phys: Conf. Ser. 302, 012018 (2011)
Corresponding Author: Y. Taguchi
E-mail: taguchi.y@stat.phys.titech.ac.jp- 22 -

2-2
Control of the photoluminescence by tuning the Fermi levelin single-layer grapheneʊDaiki Inukai1, Kensuke Saito1, Takeshi Koyama1, Kenji Kawahara2,
Hiroki Ago2, and Hideo Kishida11Department of Applied Physics, Nagoya University, Nagoya, Aichi 464-8603, Japan
2
Global Innovation Center, Kyushu University, Kasuga, Fukuoka 816-8580, Japan[1] Y. Miyoshi et al., Nat. Commun. 9, 1279 (2018).
[2] Y. D. Kim et al., Nano Lett. 18, 934 (2018).
[3] C. H. Lui et al., Phys. Rev. Lett. 105, 127404(2010).
[4] T.-W. Liu et al., Phys. Rev. B 82, 081408 (2010).
[5] H. Imaeda et al., J. Phys. Chem. C 122, 19273(2018).
[6] T. Koyama et al., Phys. Chem. Chem. Phys. 14,1070 (2012).
[7] T. Koyama et al., ACS Nano 7, 2335 (2013).
Corresponding Authors: T. Koyama and H. Kishida
Web: http://www.op.ap.pse.nagoya-u.ac.jp/
E-mail: koyama@nuap.nagoya-u.ac.jp;
kishida@nagoya-u.jp

PL Intensity (arb. unit)

Luminescence devices based on single-layer graphene were reported [1,2]. It has been
revealed that the origin of the luminescence of graphene is free electron-hole recombination[3,4]. The photoexcited electrons relax immediately after photoexcitation due to the strong
coupling with the optical phonons, so that the decay time of the luminescence is in the rangeof several hundreds of femtoseconds. Moreover, the interaction between the graphene and thesubstrate affects the lifetime of the luminescence [5]. However, the Fermi level dependence ofthe luminescence from graphene was not revealed. Fundamental understandings of the Fermi
level dependence of the luminescence are required for a wide range of applications ofluminescence devices.
In this research, we investigated the Fermi level dependence of the photoluminescence(PL) from graphene. The Fermi level of the graphene was controlled with the carrier doping
achieved by the electrochemical doping. The graphene was transferred onto an ITO/SiO2
substrate. We prepared a planner type doping cell using an ionic liquid1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imid ([EMIM][TFSI]). Here,applying a voltage to ITO electrodes enables carrier injection into graphene. We conducted
the time-resolved PL experiment using the mode-locked Ti-sapphire pulse laser (1.55 eV, 82
MHz, 100 fs). The time evolution of PL at 0.9 eV was observed by the frequency
up-conversion method [6,7]. The dots in Figure 1 show an experimental PL decay curve ofgraphene with an excitation density of ͵ǤͶͷ ൈ ͳͲିଶ  Τଶ . As the PL decay curve has a tailafter ʹͲͲ, it looks like the sum of two exponential functions. In order to consider themechanism of the PL, we fitted the experimental result using two exponential functions. Here,the time constants of the two exponential functions are ߬ଵ ൌ ͳͲ and ߬ଶ ൌ ͳ͹Ͳ ,respectively. The decay and intensity of PL were changed by the applied voltage. We will
discuss the Fermi level dependence of the luminescence.
1

Experiment
Fitting curve
W1 = 10 fs
W2 = 170 fs

0
-200

0

200
Delay Time (fs)

400

600

Figure 1. Experimental result of the PL fromgraphene and fitting result using two exponentialfunctions.

- 23 -

2-3                 

;313)$ ) ,(1'( -73)( ,# '(1 2-,#- 1  & 2 '$,&(3 )3+
'(&  833$, & (1 ,-0('(,-' 0  ,# 13+(213(7 2 

 *+-' (-)!#0,$,)%0) -+)*)&$-(($/ +,$-0)%0)  *( *+-' (-)!# '$,-+0")0($/ +,$-0")0 *(-$)(&(,-$-.- )!/( (.,-+$&$ (  #()&)"0")0  *( *+-' (-)! #($&("$( +$("# ($/ +,$-0)!)%0))%0) *(-$)(&(,-$-.- )!/( (.,-+$&$ (  #()&)"0,.%.  *((,"$2'$#(1"-4$07-%!3")+(,12$0%3**$0$,$(,, ,-" 0!-,+ 2$0( *1' 4$.* 7$# "03"( * 0-*$ (, +-#$0, + 2$0( *1 1"($,"$ $"$,2*7 1(&,(%(" ,2 $%%-021 ' 4$ !$$, 0$#(0$"2$#
2-5 0#1 $6.*-0(,& 9.-12, ,-" 0!-,1: 4$0 2'$ . 12 #$" #$  * 7$01 -% 20 ,1(2(-, +$2 *$"' *"-&$,(#$1 1 ' 4$ !$$, 5(#$*7 0$"-&,(8$# 1 9!$7-,# &0 .'$,$: -5(,& 2- 2'$(0
4$01 2(*$ "'$+(1207 ,# .'71("1 , 2'$ -2'$0 ' ,# 2'$(0  "-3,2$0. 021 13"' 1 20 ,1(2(-,+$2 * ')()"' *"-&$,(#$  , ,-5(0$1 "-3*# $6'(!(2 2'$ 3,(/3$ $*$"20(" * ,# -.2(" *.0-.$02($1 1(&,(%(" ,2*7 #(12(,"2 %0-+  1 1 5$** 1  , ,-" 0!-,1  -5$4$0
$6.*-0(,& 2'$ .-2$,2( * -%  , ,-5(0$1 ' 1 !$$, ' +.$0$# !7 2'$(0 *(+(2$# 4 (* !(*(27*2'-3&'2'$1$+ 2$0( *1' 4$!$$,.0$. 0$#!731(,&"'$+(" * ,#*(2'-&0 .'("+$2'-#1
2'$0$*( !*$.0-#3"2(-,-%5$**#$%(,$#, ,-5(0$10$+ (,1 1(&,(%(" ,2"' **$,&$$0$ 5$ 0$.-02 2-+(" **7 .0$"(1$ % !0(" 2(-,-%  , ,-5(0$1 !7 4 .-0.' 1$ 0$ "2(-,1
'$+(" * 0$ "2(-,1 "-,%(,$# 5(2'(, " 0!-,
, ,-23!$1.0-+-2$12'$&0-52'-%1(,&*$
, ,-5(0$1 2- .0$4$,2 -6(# 2(-, **-5(,& 2'$(0$ 17 ' ,#*(,& ,# "' 0 "2$0(8 2(-,   $
0$4$ *$#2' 22'$"'-("$-%13(2 !*$+$2 *-6(#$1
1 .0$"301-0.0-4(#$1%$ 1(!*$7($*#1%-02'$(0"' 0 "2$0(8 2(-, 2-+("*$4$* 20 ,1+(11(-,$*$"20-, +("0-1"-.7 0$4$ *$# 2'$(0 3,313 *
2-01(-, *5 4$1,-21$$,(,2'$!3*)(&30$
302'$0+-0$ 5$ ' 4$ 0$"$,2*7 "'($4$#
5 %$01" *$ &0-52' -% !3,#*$# $ , ,-5(0$1
!7"'$+(" *4 .-0#$.-1(2(-, ,##$+-,120 2$#
2'$(0 '(&'*7 "-,#3"2(4$ .0-.$02($1   30 ., !(-*2&8.(74+&7.3,1*;.6*)4"*8;.78.3,
%(,#(,&1 13&&$12 2' 2  , ,-5(0$1 "-3*# .37.)*&(&6'433&3489'*
.0-4(#$ ,$5 !3(*#(,& !*-")1 %-0 %3230$ %*$6(!*$, ,-$*$"20-,("1$ % 454:        454:     
$ %.'7,&&6)     .3      
$ %&,&8&      &3)&   .356*77   $ %.2   
466*7543).3,98-46#9790*&0&3.7-. "*1    
2&.13&0& <70829&(/5- 24 -

2-4Isothermal growth and stacking evolution of highly uniform AB-stacked
bilayer grapheneż Pablo Solís-Fernández1,*, Yuri Terao1, Kenji Kawahara1, Wataru Nishiyama2, Teerayut
Uwanno2, Yung-Chang Lin3, Keisuke Yamamoto1, Hiroshi Nakashima1, Kosuke Nagashio2,
Hiroki Hibino4, Kazu Suenaga3, Hiroki Ago1,3,*
1

Kyushu University, Fukuoka 816-8580, Japan
University of Tokyo, Tokyo 113-8656, Japan
3
AIST, Tsukuba 305-8565, Japan
4
Kwansei Gakuin University, Hyogo 669-1337, Japan
2

There is an intimate correlation between the stacking order and the electronic properties ofbilayer graphene (BLG). This allows realizing unique physical properties by precisely
controlling the stacking order. AB-stacked BLG (AB-BLG) in particular possess a great
technological importance for electronic and optoelectronic applications, owing to its ability toprovide a tunable band gap [1]. Current methods to produce AB-BLG generally suffer frominhomogeneous layer thickness and/or coexistence with twist BLG areas [2]. Here, we
demonstrate a method based on the chemical vapor deposition (CVD) on Cu-Ni thin films tosynthesize large-area AB-BLG virtually devoid of twisted areas [3]. Our findings proved thatthe reaction time can be used to control the stacking order, with the amount of AB-stacked BLG
gradually increasing with the CVD time (Fig. 1a). This evolution is explained by a catalystassisted continuous BLG reconstruction driven be carbon dissolution-segregation processes.
Large areas of AB-BLG can thus be obtained, with the only limitation of the size of the CVD
furnace employed (inset of Fig. 1a). The stacking order was followed by different techniques,
including Raman spectroscopy (Fig. 1b), scanning tunneling microscopy (STM) (Fig. 1c),scanning transmission electron microscopy (STEM) and low-energy electron diffraction(LEED). The opening of a band gap was successfully observed by electrical measurements on
dual-gate field-effect transistors (FETs) (Fig. 1d). The concept of the continuous reconstruction
offers a new strategy to both obtain highly pure AB-BLG and to control the stacking order ofcatalytically grown 2D materials.

Figure 1. (a) Evolution of the AB stacking ratio with CVD time. Inset shows a large area BLG on a SiO2 substrate. (b) Raman
spectrum of the AB-BLG. Inset shows an enlargement of the 2D band, fitted by 4 Lorentzian peaks. (c) STM image of the ABBLG. Inset shows the FFT of the STM image. (d) Resistance of an AB-BLG FET as a function of the top gate voltage, for different
applied back-gate voltages. The numbers indicate the value of the back-gate voltage for the corresponding curve.

[1] T. Ohta et al., Science, 313, 951 (2009).
[2] Y. Takesaki et al., Chem. Mater., 28, 4583 (2016).
[3] P. Solís-Fernández et al., ACS Nano, 14, 6834 (2020).
Corresponding Author: P. Solís-Fernández
Tel: +81-92-583-8975, Fax: +81-92-583-8975, E-mail: ps-fernandez@gic.kyushu-u.ac.jp- 25 -

2-5
Concise, Single-Step Synthesis of Sulfur-Enriched Graphene:
Immobilization of Molecular Clusters and Battery Applications
Haruka Omachi1,2, Tsukasa Inoue2, Shunya Hatao3, Criado Alejandro4, Hisanori Shinohara2,
Hirofumi Yoshikawa3, Zois Syrgiannis4, Maurizio Prato4,5,6
1

Research Center for Materials Science, Nagoya University, Nagoya 464-8602, Japan2
Department of Chemistry, Nagoya University, Nagoya, 464-8602, Japan.
3
Department of Nanotechnology for Sustainable Energy, School of Science and Technology,
Kwansei Gakuin University, Sanda, 669-1337, Japan
4
Carbon Bionanotechnology Group, CICbiomaGUNE, Gipuzkoa, Spain
5
Center of Excellence for Nanostructured Materials (CENMAT), INSTM, Dipartimento di
Scienze Chimiche e Farmanceutiche, Università di Trieste, Trieste, Italy
6
Basque Foundation for Science, Ikerbasque, Spain
The concise synthesis of sulfur-enriched graphene for battery applications is reported (Fig1a)[1]. The direct treatment of graphene oxide (GO) with the commercially available
Lawesson’s reagent produced sulfur-enriched-reduced GO (S-rGO). Various techniques, suchas X-ray photoelectron spectroscopy (XPS), confirmed the occurrence of both sulfur
functionalization and GO reduction. Also fabricated was a nanohybrid material by using
S-rGO with polyoxometalate (POM) as a cathode-active material for a rechargeable battery.
Transmission electron microscopy (TEM) revealed that POM clusters were individuallyimmobilized on the S-rGO surface. This battery, based on a POM/S-rGO complex, exhibited
greater cycling stability for the charge-discharge process than a battery with nanohybridmaterials positioned between the POM and nonenriched rGO (Fig 1b). These results
demonstrate that the use of sulfur-containing groups on a graphene surface can be extended toapplications such as the catalysis of electro- chemical reactions and electrodes in other battery
systems.

Fig 1. (a) Chemical structure of sulfur-enriched-reduced GO S-rGO. (b) Cycle performance ofthe discharge capacitiy for MCBs comprised of POM/S-rGO[1] H. Omachi, T. Inoue, S. Hatao, H. Shinohara, A. Criado, H. Yoshikawa, Z. Syrgiannis, M. Prato, Angew.
Chem. Int. Ed. 2020, 59, 7836–7841.
Corresponding Author: H. Omachi
Tel: +81-52-789-3660
Web: https://sites.google.com/view/haruka-omachi/
E-mail: omachi@chem.nagoya-u.ac.jp- 26 -

2-6
Wafer-scale synthesis of 1D transition metal chalcogenide nanowires
ż Hong En Lim1, Yusuke Nakanishi1, Zheng Liu2, Jiang Pu3, Takahiko Endo1, Chisato Ando1,
Hiroshi Shimizu1, Kazuhiro Yanagi1, Taishi Takenobu3, Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
Innovative Functional Materials Research Institute, National Institute of Advanced
Industrial Science and Technology (AIST), Nagoya, 463-8560, Japan3
Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan.

Realizing large-scale fabrication is crucial to escalate progress in fundamental studies andapplications of functional nanomaterials. Transition metal chalcogenide (TMC) nanowires [13], MX with 1D metallic nature [4-6], are considered useful for future nanoelectronics
applications. However, their mass synthesis has never been achieved. Herein, we report a waferscale growth of highly-crystalline TMC nanowires, WTe and MoTe specifically, with controlledorientation and geometrical structures by chemical vapor deposition (CVD). Depending on
crystallographic structure of the supporting surfaces, aligned, atomically thin 2D sheets ordisordered 3D bundles network, both consisted of individual TMC nanowires, were selectively
formed. They show excellent conducting properties with anisotropic 1D optical response.
Besides, these 1D nanowires could be readily converted into 2D transition metal
dichalcogenides, MX2 of either 2H or Td configurations. We offer not only the controlled andlarge-scale growth of conductive 1D nanowire thin films but also the fabrication of narrow 2D
compounds. This provides an access to study on material science, physics and applications of
nanowire-based van der Waals 2D and 3D crystals.

Fig. 1 a, Scanning electron microscope (SEM) image of a random WTe network grown on SiO2/Si substrate. b,
Atomic force microscope (AFM) topographic image of an aligned WTe network grown on a-sapphire substrate. c,
Cross-section transmission electron microscope (TEM) and d, high-angle annular dark field (HAADF) scanning
TEM images for the WTe nanowires fabricated on SiO2/Si and a-sapphire substrates with either 3D or 2D
configuration, respectively. Insets showing the corresponding 3D and 2D WTe assemblies.
[1] J. M. Tarascon, J. Electrochem. Soc. 132, 2089 (1985) [2] J. Lin et al., Nat. Nanotechnol. 9, 436-442 (2014)[3] M. Nagata et al., Nano Lett. 19, 4845-4851 (2019) [4] L. Venkataraman & C. M. Lieber, Phys. Rev. Lett. 83,
5334-5337 (1999) [5] L. Venkataraman, Y. S. Hong & P. Kim, Phys. Rev. Lett. 96, 076601 (2006) [6] Y. Xia et al.,Nano Lett., 20, 2094-2099 (2020) [7] H. E. Lim et al., Submitted (2020).
Corresponding Authors: H. E. Lim, Y. Miyata
Tel: +81-42-677-2508,
Web: http://www.comp.tmu.ac.jp/nanotube/index.html E-mail: lim@tmu.ac.jp; ymiyata@tmu.ac.jp- 27 -

2-7
Infrared spectroscopy of C60 molecules:
From the laboratory detection to cosmic abundances
Tomonari Wakabayashi
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, JapanThe mass spectroscopic detection of C60: buckminsterfullerene in 1985 [1] triggered theseries of theoretical predictions on molecular vibrations [2], leading to the identification of theinfrared (IR) absorption features as evidence for the presence of macroscopic quantities of C60
molecules in 1990 [3]. The bands of the same four IR-active T1u modes of C60 in Ih symmetry
have been observed also in the IR emission spectra in the laboratory [4] and in space [5]. The
detection of C60 and related species such as C70 in young planetary nebulae in 2010 [5]facilitated the basic research on cosmic abundances of the molecule [6]. A fundamental figure
necessary for the estimation of the molecular abundance is the band strength which is identicalwith the integrated absorption intensity per unit concentration and unit length. We have beentackling this issue along the interpretation of the split IR absorption bands of the four T1u modes(v = 1) of matrix-isolated C60 molecules in cryogenic solid pH2, oD2, and Ne, where more than
300 distinct isotopomers of 13Cn12C60-n (n = 0-3) are involved [7]. It is confirmed by rigorous
calculations that the band strength averaged over statistically random isotopomeric distributions
for 0.5-3.5% 13C abundances is more or less the same as that of the single Ih-C60 species, i.e.,
84.7 km/mol for T1u(1) at 530 cm-1, 33.8 km/mol for T1u(2) at 578 cm-1, 27.1 km/mol for T1u(3)at 1185 cm-1, and 35.4 km/mol for T1u(4) at 1432 cm-1 for the absorption. For the emission inplanetary nebulae, vibrational temperature, statistical weights in the vibrationally excited states,
and thermal populations are relevant in which the triply degenerate T1u modes are somewhat
tricky. A brief description for the golden anniversary of the prediction of aromatic stability of
C60 will also be presented [8].
[1] H. W. Kroto, J. R. Heath, S. C. O’Brien, R. F. Curl, and R. E. Smalley, Nature 318, 162 (1985).
[2] (a) M. D. Stanton and R. E. Newton, J. Phys. Chem. 92, 2141 (1988); (b) D. E. Weeks and W. G. Harter, Chem.
Phys. Lett. 144, 366 (1988); (c) Z. Slanina, J. M. Rudziski, M. Togashi, and E. Osawa, J. Mol. Struct.
Theochem 202, 169 (1989).
[3] (a) W. Krätschmer, K. Fostiropoulos, and D. R. Huffman, Chem. Phys. Lett. 170, 167 (1990); (b) W. Krätschmer,
L. D. Lamb, K. Fostiropoulos, and D. R. Huffman, Nature 347, 354 (1990).
[4] C. I. Frum, R. Engelman Jr., H. G. Hedderich, P. F. Bernath, L. D. Lamb, and D. R. Huffman, Chem. Phys.
Lett.176, 504 (1991).
[5] J. Cami, J. Bernard-Salas, E. Peebles, and S. E. Malek, Science 329, 1180 (2010).
[6] S. Iglesias-Groth, F. Cataldo, and A. Manchado, Mon. Not. R. Astron. Soc. 413, 213 (2011).
[7] (a) N. Sogoshi, Y. Kato, T. Wakabayashi, T. Momose, S. Tam, M. E. DeRose, and M. E. Fajardo, J. Phys. Chem.
A 104, 3733 (1996): (b) T. Wakabayashi, T. Momose, and M. E. Fajardo, J. Chem. Phys. 151, 234301 (2019).
[8] (a) E. Osawa, Kagaku (Kyoto) 25, 854 (1970); (b) The 58th FNTG General Symposium, Commemorative
Session 2C-1–2C-6, Abstract Book p.p. 11–16 (2020).
Corresponding Author: T. Wakabayashi
Tel: +81-6-4307-3408, Fax: +81-6-6723-2721,
Web: https://www.chem.kindai.ac.jp/laboratory/wakabayashi/
E-mail: wakaba@chem.kindai.ac.jp- 28 -

2-8
Primary Particles of Detonation Nanodiamond Finally IdentifiedżEiji ƿsawa1*, Amanda S. Barnard2, and Toshihiko Tanaka3
1

NanoCarbon Res.Inst., Asama Res.Ext.Center,ShinshuUniv.,Ueda 386-8567, Japan.
2

3Res. School of Comput. Sci., Aust. Nat. Univ., Canberra, Australia.
Depart.Chem.and Biochem., NatInst.Technol., FukushimaColl., Iwaki, 970-8034, Japan

Following our preliminary announcements[1] we report herewith full results from ourlong work to isolate and characterize the primary particles of detonation nanodiamonds(PPDND). If we count from the discovery of DND by Danilenko in 1963[2], it took well overhalf a century to solve this difficult problem.
Attractive interfacial Coulombic interactions (ICI) between the closest pair of facets inthe neighboring particles are the major causes of tight agglutination among PPDNDs in the
crude DND[3]. According to SCC-DFTB calculations, the strongest of such bonds could be astight as covalent C-C bonds[4]. Thus, we can imagine how highly destructive shock could ourstirred-media milling produce.
Taguchi s quality engineering method was used to simultaneously optimize theoperation conditions of the mill, but to our surprise, the only parameter that should carefully
adjusted turned out to be the initial concentration of agglutinates, and the optimized
concentration proved unexpectedly low 4.0 w/v%! Hydration of solvent water on the charged
nano-surface of PPDND was found responsible for the unusual behaviors of PPDND. The novel
feature of nano-hydration was later studied in detail by Petit[5] and Kaneko[6].
Surface and internal structures of PPDND have been studied by both experiments,
especially with the aid of LDI-TOF-MS[7], and SCC-DFTB calculations[3,4]. Briefly, thesurface shell consists of graphene patches on top and a thin amorphous diamond layer is formed
immediately below. Detailed features in the shell will be given in the lecture. Inner core is apure diamond. A few indirect pieces of evidence will be presented to conclude that the corediamond consists of exactly 1000 carbon atoms in the shape of a hexahedron withcircumscribing sphere diameter of 2.2nm.
Size of PPDND is, as we have reported before[1], 2.6s0.5nmby DLS methodin water.
There is still no absolute proof to ensure this value corresponding to the true PPDND, but for acouple of indirect evidence. First it perfectly matches with those of meteoritic, especially
Allende, nanodiamonds discovered by R. S. Lewis in 1987[8]. Second, we have never observed
detonation nanodiamonds smaller than this value with statistical significance.
Finally, the almost perfect agreements between average experimental structural features andthe corresponding numbers from quantum-chemical calculation cannot be overemphasized.
[1] S. Sasaki, Abstract No. 17, p-PM3-8, in JSAP-MRS Meeting, Doshisha University, Sept. 16-20, 2013.
[2]V. V. Danilenko, ‘Nanocarbon phase diagram and conditions for detonation nanodiamond formation.’ In“Synthesis and Applications of Ultrananocrystalline Diamond”, D. M. Gruen, et al. (Eds.), Springer, p. 181, 2005.
[3] A. S. Barnard, M. Sternberg, J. Mater. Chem. 17, 4811 (2007).
[4] A. S. Barnard, J. Mater. Chem. 18, 4038 (2008).
[5] T. Petit et al., J. Phys. Chem. Lett, 6, 2909 (2015).
[6] E. Z. Pina-Salazar, T. Sakai, E. Osawa, R. Futamura, K. Kaneko, J. Colloid. & Interface Sci., 549, 133 (2019).
[7] M. Fukaya, et al, FNTG 50th General Symposium, Feb.19-22, 2016, Univ. Tokyo.
[8] R. S. Lewis, E. Anders, B. T. Draine, Nature, 339, 117 (1989).
*Corresponding Author: E. Osawa, Tel: +81-268-75-8381, http://nano-carbon.jp/, E-mail: osawa@nano-carbon.jp.

- 29 -


2-9 

!   
J,464,?,24>34 ':8:D@64#30 D:6:',6,3,>34 &3420:",6,8@=, ',/,346:!,>349: $%'!"'#%!(' "&( '*#%!*#")%&'* #""'#(#*#  $" $%'!"'# !&'%*$$#" ##  !"!#(&&"#
#*# $"
7:?:1/4>0,>0>,=0.,@>0/-DA4=,74910.?4:9:13@8,9>7?3:@238,9D/=@2>,=0.@==09?7D
@>0/,>,9?4A4=,7?30=,;D8,9D;=:-708>>?477=08,49:=?34>=0,>:94?3,>-009,9@=209?
.3,770920?:/0A07:;,9:A07?D;0:1,9?4A4=,7/=@2>9?34>.:9?0C?1@770=090>8,D-0.:80
9:A07/=@2>/@0?:4?>@94<@0>?=@.?@=0>:B0A0=4?>;::=B,?0=>:7@-474?D4>,-,==40=49?30
,48 :1 ;3,=8,.0@?4.,7 @>,20 ': :A0=.:80 ?34> 8,9D B,?0=>:7@-70 /0=4A,?4A0> 3,A0 -009
>D9?30>4E0/,9/?304=-4:7:24.,7,.?4A4?40>3,A0-009>?@/40/)0 3,A0 ;=0A4:@>7D =0;:=?0/ B,?0=>:7@-70 ;=:7490?D;0   /0=4A,?4A0> >3:B 4934-4?4:9
,.?4A4?40>,2,49>?(;=:?0,>0($%(=0A0=>0?=,9>.=4;?,>0(%'("&  ;=:?0,>0 ("&   ,9/ ( "& ;:7D80=,>0 ("& &:80 :1 ?308 3,A0
>?0=0:4>:80=>-@?B03,A09:?0A,7@,?0/?30,.?4A4?40>:1?304==0>;0.?4A009,9?4:80=>/@0?:?30 /4114.@7?40> 49 :-?,49492 ?308 9 ?34> >?@/D B0 >?0=0:>070.?4A07D >D9?30>4E0/ ?B:09,9?4:80=> :1 ?30 ;=:7490?D;0   /0=4A,?4A0> F &.3080  ,9/ 0A,7@,?0/ ?304=
4934-4?4:9,.?4A4?40>,2,49>??30,-:A0809?4:90/1:@=09ED80> 
4=>? B0 >D9?30>4E0/ 4849: 0>?0=> ,> ;=0.@=>:=> 1=:8 27D.490 '%'-@?D7 0>?0= ,9/.:==0>;:9/492 -09E,7/03D/0 /0=4A,?4A0>'309'%'-@?D7 0>?0=> :1 F B0=0 >D9?30>4E0/
A4, ?30  /4;:7,= .D.7:,//4?4:9 49 ?30 ;=0>09.0 :1 ,>D880?=4. .,?,7D>?> * + 49,77D -D
/0;=:?0.?4:9:1'%'-@?D72=:@;0,.309,9?4:80=:1.,=-:CD74.,.4/>FB,>:-?,490/'30
:-?,490/.:8;:@9/>B0=04/09?4140/-D&!&,9/ "!%'30,->:7@?0.:9142@=,?4:9B,>
/0?0=8490/-D.4=.@7,=/4.3=:4>849,..:=/,9.0B4?3?30>0.?:==@70* +@=?30=8:=0?30
09,9?4:80=4.0C.0>>B,>.,7.@7,?0/-D$ B4?3.34=,7.:7@89($%,9/("&  
4934-4?4:9,.?4A4?40>B0=00A,7@,?0/-D?30<@,9?4?,?4A0,9,7D>0>:1;0;?4/01=,2809?>.70,A0/
-D?3009ED80>B4?3 !&(%',9/("&4934-4?4:9,.?4A4?40>B0=00A,7@,?0/-D80,>@=492 =,/4:,.?4A4?40> :1 9@.70:?4/0> 49.:=;:=,?0/ -D ?30 09ED80>  ,2,49>? ($%
,9/  ,9/  ,2,49>? ("& >3:B0/ /4110=09? 4934-4?4:9 ,.?4A4?40> -0?B009 ?B:09,9?4:80=>
'34> 4> ?30 14=>? =0;:=? ?: >3:B 09,9?4:80=> :1   /0=4A,?4A0> 3,A0 /4110=09? -4:7:24.,7
,.?4A4?40>?4>>@220>?0/?3,?>?=@.?@=,7/0>429.:9>4/0=492,->:7@?0.:9142@=,?4:94>48;:=?,9?
1:=?30/0A07:;809?:11@770=090>,>80/4.490> 
O

H2 N

R1
H

* +  !,=.:!,=?G90E '   920B 308 9? /  
* +  !,=.:!,=?490E '   920B 308 9? /   



O

- 30 -R1
N

COOt-Bu

1 : R1=R2=H
2 : R1=R2=OMe
3 : R1=COOt-Bu, R2=COOH
R2

R1

C60

:==0>;:9/492@?3:=':8:D@64#30',/,346:!,>349:
'07          ,C     
8,47:30?8;3,604:,.5;8,>349:?/;3,604:,.5;

Ot-Bu

abs. MgSO4
Et3N
dry dichloromethane, r.t.

TFMSA
NH
various catalysts
toluene (deoxidized)

COOt-Bu

NH
r.t.

COOH

cis-1, cis-2, cis-3&.3080 &?0=0:>070.?4A0>D9?30>4>:1F

2-10
The Effect of Heteroatom Doped Reduced Graphene Oxide in
Enhancement of Thermoelectric PerformanceżMariamu Kassim Ali1, Mohsen Khozami1, Mohsen Ghali2, Nageh Shaalan3, Koichi
Nakamura4, Ahmed Abd El-Moneim1,2
1

Department of Materials Science and Engineering, Egypt-Japan University of Science andTechnology, New Borg El Arab City, Alexandria 21934, Egypt
2
School of Basic and Applied Science, Egypt-Japan University of Science and Technology,
New Borg El Arab City, Alexandria 21934, Egypt
3
Department of Physics, College of Science, King Faisal University, Al-Hasa 31982, P.O. Box400, Saudi Arabia
4
Department of Mechanical and Electrical System Engineering, Kyoto University of Advanced
Science, Kyoto 615-8577, Japan
Carbon-based materials and in particular, graphene have sparked a special interest due totheir outstanding electronic and mechanical properties [1]. The zero-band gap nature ofgraphene however limits its usage in many applications and so numerous chemicalfunctionalization processes such as doping with heteroatoms such as like nitrogen, sulfur, boron
and more recently co-doping have been adopted to open the band gap and tailor its electronic
properties [2]. Other low performing such as polymers have utilized graphene in order toenhance their T.E characteristics. In this study, heteroatom-doped reduced graphene oxide wasused to improve the T.E properties of polyaniline.
The heteroatom doped rGO was fabricated via hydrothermal process after which thenanocomposites were prepared via chemical oxidative polymerization. Structuralcharacterization carried out confirmed the successful doping of the rGO and its incorporation
into the polyaniline. Additionally, TEM
results proved the successful enwrapping of
the basal rGO sheets with polyaniline due tothe strong ʌ-ʌ stacking.
Thermoelectric analysis further revealed anegative Seebeck coefficient which indicatesn-type transport characteristics. The
graphene-based nanocomposites were shownto have an enhanced thermoelectric behavior
compared to pristine material which is proof
that rGO can be used for enhancing T.E
Fig. 1 Schematic of the heteroatom doping of graphene
performance.
oxide and preparation of nanocomposites[1] Novoselov, K.S., et al., A roadmap for graphene. Nature, 2012. 490 (7419): p.192-200.
[2] Liu, H., Y. Liu, and D. Zhu, Chemical doping of graphene. Journal of materials chemistry, 2011. 21 (10): p.
3335-3345
Corresponding Author: M. Kassim Ali
Tel: +20 102 409 3749
E-mail: mariamu.kassim@ejust.edu.eg- 31 -


2-11

                          ;/-/)*2/5+53)*-""+")"/-"*&*52"+/3)*! !   !
 

Intensity / cps

Current density / A cm-2)&3425$452&/'(2"0)&.&*3$25$*",'/24)&%&4&2-*.*.(4)&*202/0&24*&3./2%&24/$/.42/,
4)&3425$452",".%&,&$42/.*$02/0&24*&3/'(2"0)&.&4)&-/%*'*$"4*/./'$)&-*$",3425$452&*3
2&15*2&% /.6&.4*/.",,9 %*":/.*5- (2"'4*.( -&4)/% *3 54*,*:&% '/2 4)& '5.$4*/.",*:"4*/. /'(2"0)&.&%5&4/4)&2&%5$4*/.0/4&.4*",/'%*":/.*5-3",43/7&6&2%5&4/2&,"4*6&,9.&("4*6&
&,&$42/$)&-*$", 0/4&.4*", /' 2&"$4".4 4/ 4)& &2-* ,&6&, 30/.4".&/53 &8/4)&2-*$ 2&"$4*/.
#&47&&.(2"0)&.&".%%*":/.*5-3",4/$$522&%)&$/.42/,/'4)&352'"$&(2"'4&%"-/5.43"2&
34*,,%*''*$5,4&2&7&54*,*:&4)&&,&$42/$)&-*$",-&4)/%3'/24)&-/%*'*$"4*/./'4)&352'"$&
#953*.("./%*$/8*%"4*/./'0)&.9,)9%2":*.&%&2*6"4*6&3
300
2"0)&.& /. 4)& -&4", 352'"$&3 7&2& 02&0"2&% #9 4)&$)&-*$", 6"0/2 %&0/3*4*/. -&4)/%3 ".% 4)& $2934",,*.*49 /'
200(2"0)&.&7"3$)"2"$4&2*:&%#9$/.'*2-"4*/./'#".%".% #".%'2/-4)&"-".30&$42/3$/09&8$*4"4*/.7"6&,&.(4) 
100.- ,"3&2 *.4&.3*49   -! ,, 4)& &,&$42/$)&-*$",
&80&2*-&.43 7&2& $/.%5$4&% #9 53*.(    0/4&.4*/34"4
0
-0.2
0.0
0.2
0.4
0.6
((,".%4&,&$42/%&37&2&53&%"32&'&2&.$&".%$/5.4&2
Potential / V vs. Ag/AgCl&,&$42/%&3 2&30&$4*6&,9 5 5.%&20/4&.4*", %&0/3*4*/. 7"3,) /$"-'$+%%' )%'$/.%5$4&%#953*.( -5".% 3/,54*/. ", "& +! *& $# &7*4)4)&37&&02"4&/' - 35&4/4)&0/33*#*,*49'/24)& ()*& ' (!&/$!/)0"& )
   $ .( )+  
/8*%"4*/./'(2"0)&.&0/4&.4*",2".(&7"33&4,/7&24)"./.& "&%*
/'4)&/0&.$*2$5*40/4&.4*",  /,&$5,"2-/%*'*$"4*/./'
(2"0)&.&5  352'"$& 7"3 #9 $9$,*$ 6/,4"--/(2"- #9
53*.( ",".% -0)&.9,)9%2":*.&%&2*6"4*6&3
,&$42/$)&-*$", -&"352&-&.43 7&2& $/.%5$4&% *.   ",*.4)&02&3&.$&/' -0)&.9,)9%2*:&.&"33)/7.*.
*(52& .4)&"#3&.$&/'0)&.9,)9%2":*.&"./%*$$522&.47"3
./4 /#3&26&% . 4)& /4)&2 )".% *. 4)& 02&3&.$& /'
1000
1500
2000
2500
3000
-1
0)&.9,)9%2":*.&"./%*$$522&.47"3/#3&26&%'2/-  63
Raman shift / cm
((,)&"./%*$'&"452&7"3%*''&2&.4'2/-3&$/.%$9$,& " ,)  %& *(+) ' ,
35((&34*.(4)"4%&0/3*4*/./'0)&.9,(2/503/.5&,&$42/%& $#'++'%&!,)+'()5*(52& 3)/734)&"-".30&$42"/'5".%)  &% %5#".% $-".% #".% $-7&2&/#3&26&%'/24)&"302&0"2&%5
&,&$42/%& . 4)& /4)&2 )".%  #".%  $- 7"3 "%%*4*/.",,9 /#3&26&% '/2 )5
"-". 30&$42/3$/09 2&6&",&% 4)"4 35$$&33'5, -/%*'*$"4*/. /' (2"0)&.& 352'"$& #9
0)&.9,)9%2":*.&%%*4*/.",,95.%&20/4&.4*",%&0/3*4*/.3)/7&%4)"44)&352'"$&/'&,&$42/%&*334*,,$/6&2&%7*4)(2"0)&.&"'4&2&,&$42/$)&-*$",42&"4-&.43)&3&2&35,4302/0/3&4)&.&7
02&0"2"4*/.-&4)/%'/2-/,&$5,"29-/%*'*&%(2"0)&.&&6&./.-&4",352'"$& 2)20&'+2/)-0&'2//#,1.','-,',*#!1/-!&#+'01/5 
-//#0.-,"',%21&-/2)20&'+
#*     4     
# &11.0333!&#+0!'&-)2"'!(.6.!+'*1$2)20!'&-)2"'!(.- 32 -




2-12

               
:!*!(!.,!).,.()1.4*42(),!%)41!*.2()     "  "    ! "    (%%+%#31.-)#!-$#(%,)#!+/1./%13)%2.&'1!/(%-%#!-"%,.$4+!3%$3(1.4'(3(%)-3%1&!#)!+
)-3%1!#3).- %#%-3+8%),1%/.13%$3(!3'1!/(%-%#!-"%4-)04%+842%$!2/1.3.-
/%1,%!"+%,%,"1!-% (%2314#341!+#.-31.+.&3(%/1.3.-/%1,%!")+)38#!-"%42%&4+&.13(%!//+)#!3).-224#(!23(%2%/!1!3.1&.1%+%#31.#(%,)#!+2823%,2.6%5%1)3)223)++$)&&)#4+33.
#.-31.+ 3(% 2314#341% .& '1!/(%-% %1% 6% 2(.6 3(!3 ,.+%#4+!1 ,.$)&)#!3).- .& '1!/(%-%
241&!#% #!- ,.$4+!3% 3(% /1.3.- /%1,%!")+)38 &1., )-2)34 !,!- 2/%#31.2#./8 4-$%1
%+%#31.#(%,)#!+/.3%-3)!+#.-31.+1!/(%-%.-4241&!#%2$%-.3%$!246%1%/1%/!1%$"83(%#(%,)#!+5!/.1$%/.2)3).-
,%3(.$2!-$3(%#1823!++)-)38.&'1!/(%-%6!2#(!1!#3%1)9%$"8#.-&)1,!3).-.&"!-$!-$ "!-$&1.,3(%!,!-2/%#31.2#./8%7#)3!3).-6!5%+%-'3(-,+!2%1)-3%-2)38 ,
++3(%%+%#31.#(%,)#!+%7/%1),%-326%1%#.-$4#3%$"842)-' /.3%-3).23!3''+!-$ 3 %+%#31.$%2 6%1% 42%$ !2 1%&%1%-#% !-$ #.4-3%1 %+%#31.$%2 1%2/%#3)5%+8 .+%#4+!1,.$)&)#!3).-.&'1!/(%-%4 241&!#%6!2"8%+%#31.#(%,)#!+!-.$)9!3).-"842)-' ,/(%-8+(8$1!9)-%$%1)5!3)5%2)- !+(%,.$)&)%$%+%#31.$%6!2$%-.3%$!2(4-2)34%+%#31.#(%,)#!+!,!-2/%#31.2#./86!2#.-$4#3%$"842)-' 
)'41%  !-$  2(.6 3(% %+%#31.#(%,)#!+ /.3%-3)!+$%/%-$%-3"!-$!-$ "!-$/.2)3).-.&4!-$(4
%+%#31.$%4%3.3(%,.$)&)#!3).-.&%+%#31.-)#2314#341%!-$)-3%1#!+!-32 "%36%%- 4 !+3%12 3(% /.2)3).- .&  "!-$ !-$"!-$2"!-$!-$ "!-$1%,!)-22),)+!1/.2)3).-4/3.
 "!-$/.2)3).-6()#(24''%2323(%%+%#31.-)#2314#341%
.& '1!/(%-% 24$$%-+8 2()&32 !3      "!-$ 24$$%-+8
$1./%$ !3     !-$     !-$ 1%5%12)"+8 4% 3. 3(%%+%#31.#(%,)#!+1%!#3).-(8$1.'%-%5.+43).-6!2."2%15%$)-#8#+)#5.+3!,,.'1!,2(%."2%15%$ "!-$2()&3)2$4%3.             3(% )-3%1#!+!3).- .&  ,.+%#4+%2 "%36%%- '1!/(%-% !-$4      
/.22")++8 $4% 3. 3(% /1.3.- 34--%+)-' ,/.13!-3+8 3(%/%1,)%!3).-6!2#.-31.++%$"83(%%+%#31.#(%,)#!+/.3%3-!)+&.1!-.$)9!3).-()2234$8$%,.-231!3%224##%22&4+,.$)&)#!3).-.&3(%'1!/(%-%/1./%13)%2&.1#.-31.++%$/1.3.-/%1,%!3).-# $&!9097-.2&96&047-.966*38 5.3.43.31*(864(-*2.786<  '.2!9097-.2&96&047-.&8*6.&17   # $  4=&)&.)&1,4   "9   *.2   &896* 
466*7543).3,98-46!42&.
!*1     &;      
2&.18%042&.% +6438.*6-409)&.&(/5"*'-8857:::(-*27(.-409)&.&(/5>5(- 33 -

                  

3-1
2D tin layers on SiC(0001)
żAnton Visikovskiy1, Hiroshi Ando1, Shingo Hayashi1, Fumio Komori2, Koichiro Yaji2,Satoru Tanaka1
1

Dept. of Applied Quantum Physics, Kyushu University, Fukuoka 819-0395, Japan
Institute for Solid State Physics, University of Tokyo, Kashiwa 277-0882, Japan

2

Graphene is a fascinating 2D material. However, due to small spin-orbit interaction (SOI) in
carbon atoms, band spin polarization is usually very small in normal graphene layer, which
limits its use for spintronics devices. Sn is a heavy group IV element with substantial SOI, andit would be interesting to see if 2D materials made of Sn are possible to be realized and what
properties they would exhibit. In our work we address the issue of stability and electronic
properties of 2D Sn layers on SiC(0001) by ab initio calculations and experimental
measurements.
Our DFT calculations show that layer with honeycomb structure similar to graphene (it iscalled stanene in case of Sn atoms) is stable when grown on top of Si2N3/SiC(0001), while onbare SiC(0001) the more dense (1x1), unusual for group IV element, triangular structure has
better energy stability. While growth of 2D triangular structure on bare SiC can be hindered bythermal growth dynamics and result in clustering, one of the solution would be to intercalate
Sn atoms into graphene/SiC(0001) interface, which suppresses 3D growth and promote layered.
This approach was realized experimentally with a very good agreement between experimental
results and computational data [1,2]. Both triangular and honeycomb structures are found tohave very interesting band dispersion with spin-polarized states in form of Rashba and Zeeman
splitting.
g

Fig. 1 (a) Honeycomb Sn layer (stanene) on Si2N3/SiC(0001). (b) Triangular Sn layer on SiC(0001). (c) The
electronic structure around K point of structure (b) with color coding of spin directions, both Zeeman and Rashba
type spin splitting occur.

[1] S. Hayashi et al. Appl. Phys. Express, 11, 015202 (2018).
[2] K. Yaji et al. Phys. Rev. Lett., 122, 126403 (2019).
Corresponding Author: A. Visikovskiy
Tel: +81-92-802-3536
Web: http://www.qpn.kyushu-u.ac.jp/Tanaka/Welcome.php
E-mail: anton_v@nucl.kyushu-u.ac.jp- 34 -

3-2
Strain effect on circularly-polarized electroluminescencein transition metal dichalcogenides
Sake Wang, M. Shoufie Ukhtary, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Transition metal dichalcogenide (TMD) has attracted much attention as a two-dimensional(2D) direct-gap semiconductor [1]. Since the TMD possesses broken inversion symmetry [1],a left- (or right-) handed circularly-polarized light (LCP or RCP) is emitted in the K (or K')
valley in the hexagonal Brillouin zone, which is known as the valley polarization [2]. If
photoemission from the K and K' valleys is not equal to each other, we observe acircularly-polarized light which is important in optoelectronics.
Zhang et al. [3] have fabricated a light-emitting diode (LED) in a p-i-n junction of tungsten
diselenide. The LED emits circularly-polarized electroluminescence (EL) by applying
in-plane electric field between the source and drain electrodes. Since the EL photon is emitted
in the overlapping region of the occupied k states by an electron (e) in the conduction band
and a hole (h) in the valence band as shown in Fig.1(a1), the circularly-polarized EL occurs
when the two overlapping regions in the K and K' valleys are not equivalent to each other.
This situation occurs when we apply the electric field, E, in the direction of kx [Fig.1(a2)] in
which the overlapping regions change the area since the (e) or (h) states shift to left or rightboth for the K and K' valleys. In order to get the inequivalent area of the two overlapping
regions, we need so-called trigonal warping (TW) effect [4] in the valence band which we
exaggeratedly show as a triangle in Fig.1.
However, since the TW effect is not effective especially for a small circle near the K (K')
point, we cannot get the large difference of the overlapping area. Here we consider the strain
effect on the energy dispersion in which the (e) and (h) circles are originally mutually shiftedin the case of E 0 as shown in Fig.1(b1) which
Trigonal warping effectStrain effecthas the time-reversal symmetry [5, 6]. When we
K'
K'
K
K
(a1)
(b1)
E=0
apply the electric field, the overlapping regionshhe E=0 eheebecome more inequivalent than the case of the TW
h
L
R
L
R
effect as shown in Fig.1(b2), since the direction of the
L=R
L=R
(b2)
(a2)
h
h
e
E
E e
h
e
original shift is selected to the direction of the electric
e
L
R
L
R
h
field. We show even 100% circular polarization
L>R
L>R
without losing the EL intensity, which is much larger
than the circular polarization caused by the TW effect.
Fig.1 Occurrence of circularly-polarized
EL: (a1) the overlapping region of hole
We hope that the theoretical prediction will be(h)and electron (e) occupied regions
observed by the experiment.
[1] D. Xiao et al., Phys. Rev. Lett. 108, 196802 (2012).
[2] S. Wang, F. R. Pratama, M. S. Ukhtary, and R. Saito, Phys.
Rev. B 101, 081414(R) (2020).
[3] Y. J. Zhang et al., Science 344, 725 (2014).
[4] A. Kormányos et al., Phys. Rev. B 88, 045416 (2013).
[5] H. Rostami et al., Phys. Rev. B 92, 195402 (2015).
[6] S. Wang, M. S. Ukhtary, and R. Saito, Phys. Rev. Research(in press).
Corresponding Author: Sake Wang
E-mail: sake@flex.phys.tohoku.ac.jp- 35 -

emits LCP (L) or RCP (R) in the K or K'
valley, respectively. Here the triangle
shape for (h) represents the trigonal
warping effect. When the electric fieldis zero E 0 , the two regions have thesame area, L=R. (a2) For E z 0 , (h)[or (e)] shifts to right (left) from which
we get L>R. (b1) When we apply thestrain, (h) and (e) are originally shiftedin the K and K' valleys, which gives
L=R. (b2) For E z 0 , we get L>R
more effectively than the case of (a2).

3-3Operando electrical characterization of methane oxidation
with atomically thin films of IrO2 nanosheetsżRyo Nouchi1,2, Yoshiaki Ishihara1, Wataru Sugimoto3
1

Dept. of Physics and Electronics, Osaka Prefecture University, Sakai 599-8570, Japan
2
PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
3
Research Initiative for Supra-Materials (RISM) and Faculty of Textile Science andTechnology, Shinshu University, Ueda 386-8567, Japan

Methane (CH4) is the main component of natural gas such as shale gas and now regarded as
an alternative carbon source to petroleum for producing value-added chemicals such as
methanol, formaldehyde and ethylene. Oxidation (dehydrogenation) is the initial step to
produce the chemicals, but CH4 possesses the most stable C–H bond among all hydrocarbons.
Thus, a lot of efforts have been devoted to finding a material that enables facile dehydrogenationof CH4. Recently, Weaver et al. reported that CH4 undergoes dehydrogenation at low
temperatures on a surface of iridium dioxide single crystals [1].
Operando monitoring of the reaction is effective in confirming whether such reaction
actually occurs. Herein, we employed a change in electrical resistance as a facile platform formonitoring chemical reactions [Fig. 1(a)]. However, a reaction-induced change in resistance ishard to be detected because the high bulk conductivity of the IrO2 single crystals masks theresistance change. Thus, an ultrathin sensing layer is desired to enhance the surface sensitivity.
In this study, atomically thin films of IrO2 nanosheets were fabricated on a SiO2/Si substrate by
the layer-by-layer method using a colloidal suspension of the nanosheet [2]. We observed aclear decrease in resistance upon CH4 exposure, which is ascribable to (partial) reduction of the
IrO2 nanosheets (bulk resistivity: IrO2 > Ir [3]) [Fig. 1(b)]. The resistance decrease was foundto be suppressed upon co-exposure of O2 [Fig. 1(c)], which can be understood as immediate
healing of oxygen vacancies formed by the reduction by CH4.

Fig. 1 (a) Schematic diagram of resistance change of IrO2 nanosheet films upon CH4 exposure. Resistance change(b) without and (c) with co-exposure of O2.
[1] Z. Liang, J. F. Weaver et al., Science 356, 299 (2017).
[2] D. Takimoto, W. Sugimoto et al., Electrocatalysis 8, 144 (2017).
[3] S.-W. Kim et al., J. Appl. Phys. 103, 023517 (2008).
Corresponding Author: R. Nouchi
Tel: +81-72-254-8394, Fax: +81-72-254-8394,
E-mail: r-nouchi@pe.osakafu-u.ac.jp- 36 -

3-4
Electrical control of resonance frequency for drum-type hBN nano-electromechanical resonator with photothermal actuationӑYusuke Morimoto1, Kuniharu Takei1, Takayuki Arie1, Seiji Akita1

1

Department of Physics and Electronics, Osaka Prefecture University,1-1 Gakuencho, Nakaku,
Sakai, Japan

Nano-electro-mechanical resonator (NEMR) made of hexagonal boron nitride (hBN) that istransparent in the visible light region can be expected to realize the precious measurement of opticalforce acting on photoresponsive nanomaterials on hBN. It is important to control only the resonancefrequency with the constant oscillation amplitude. In this study, in order to address this issue, theelectrical tuning of the resonance frequency of drum-type hBN NEMRs with photothermal actuation
is investigated.
The bulk h-BN was transferred onto the n+Si/SiO2 substrate by PDMS gel stamping method, andthe lower SiO2 part was etched with BHF to produce a suspended drum-type (6 m diameter) structure(Figure 1). The drum was driven by a photothermal method by irradiation of intensity modulated laseron the electrode of the drum edge, where DC voltage (VDC) was applied between the substrate (n+Si)
and the Au electrode. The resonance curves were measured in vacuum.
The resonance frequency and Q factor were 22.72 MHz and 260, respectively without DC bias.
The amplitude at resonance increased with increasing the excitation laser intensity. When a DC voltage
was applied, the resonance frequency increases up to 0.5% with increasing the DC voltage to 2 V asshown in Fig. 2(a).This is most likely due to the increase in tension induced by the deformation ofsuspended part of Au electrodes. Further application of DC voltage induces the electrical softening on
the hBN due to the non-uniformity of electric field distribution. As shown in Fig. 2(b), the oscillation
amplitude at resonance keeps constant even under different VDC (< 2.5 V). Thus, we have successfully
demonstrated the electrical control of resonance frequency for the drum-type hBN NEMR withphotothermal actuation.

Figure 1: Schematic illustration of the DC biased
drum type hBN NEMR.

Figure 2: DC bias VDC dependences of (a)resonance frequency and (b) oscillation
amplitude of photo-thermally actuateddrum type hBN NEMR.

Acknowledgements This work was partially supported by KAKENHI Grant Numbers 15H05869, 16H00920,
16K14259, 16H06504, and 17H01040.
Corresponding Author: S.Akita, Tel: +81-72-254- 9261, E-mail: akita@pe.osakafu-u.ac.jp- 37 -

3-5
Promising next-gen Cu-substitutes: Lightweight Cu/Carbon Nanotube
Composite Electric ConductorsżRajyashree Sundaram1, Guohai Chen1, Takeo Yamada1, Don Futaba1, Kenji Hata1, Ken
Kokubo1, Atsuko Sekiguchi1
1

National Institute of Advanced Industrial Science and Technology (AIST), CNT application
research center, Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan

We present recent progress in developing copper-matrix carbon nanotube (Cu/CNT)
composites as realistic next-gen electric conductors substituting copper [1]. Neat CNT materials
are yet to fulfil demands for lightweight electrical conductors that surpass Cu for sustainable
future technologies. Despite advances, best CNT assembly conductivities are 10 times lower
than that of copper [2]. We believe this deficiency can be overcome by copper-CNT hybrids.
We introduce our homogeneously mixed Cu/CNT composites at least 2/3rd as light as copper[3-6] with competitive electrical conductivities, heat-/current-stabilities and tensile strengths.
We could fabricate the composites in a variety of structures ranging from macroscale wires andsheets to microscale pillars. Our composite room temperature electrical conductivities are 1-3
× 105 S/cm (vs. 5.9 × 105 S/cm for Cu) with temperature coefficients of resistivity (TCR) 10%
of Cu-TCR, and current carrying capacities (CCC) rivalling Cu. Our Cu/CNT showcoefficients of thermal expansion (CTE) of ~ 4 ppm/K, closer to Si-CTE (~3 ppm/K) and much
lower than Cu-CTE (~17 ppm/K). We observe Cu/CNT performances to depend on Cu spatial
distribution and CNT attributes, indicating possibilities for performance-tuning.
With overall composite performances competitive to Cu, Cu/CNT holds promising
application-potential as a Cu-substitute. Our lightweight conducting Cu/CNT wires could
replace heavy copper electrical wiring in aircrafts and automobiles to achieve better fuelefficiencies and reduced CO2 emissions. The composite’s lower TCR vs. Cu (i.e., temperaturestable conductivity) also makes it a more reliable electrical conductor than Cu for hightemperature operation e.g., in motor windings. In addition, applying our Cu/CNT with CTE ~Si and CCC rivalling Cu as interconnects could enable smaller and more powerful electronics
with reduced delamination and current-failure.
[1] R. Sundaram et al. Royal Society Open Science, 5(11), 1-21 (2018).
[2] D. E. Tsentalovich et al. ACS Applied Materials & Interfaces, 9 (41), 36189 (2017).
[3] R. Sundaram et al. Scientific Reports, 7(1), 9267 (2017).
[4] R. Sundaram et al. Materials Today Communications, 13, 119 (2017).
[5] R. Sundaram et al. Japanese Journal of Applied Physics, 57(4), 04FP08 (2018).
[6] R. Sundaram et al. Journal of Materials Research and Technology, 9(3), 6944 (2020).
Corresponding Author: R. Sundaram, A. Sekiguchi
Tel: +81-029-861-0487, +81-029-861-4611 Fax: +81-029-851-5425
Web: https://unit.aist.go.jp/cnta/index_en.html
E-mail: Rajyashree-meenakshisundaram@aist.go.jp, atsuko-sekiguchi@aist.go.jp- 38 -

3-6
Anthracene-assisted deterministic transfer of optical-quality
carbon nanotubesżKeigo Otsuka1, Yuichiro K. Kato1,2
1

Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama 351-0198, Japan
2
Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama
351-0198, Japan
Carbon nanotubes are unusual nanomaterials with a high reproducibility in atomic structures
defined by two integers (chirality) and promising as quantum light sources that can beincorporated into electrical devices and photonic circuits [1,2]. Although the tunability of
optical transition energies depending on the tube chirality and surrounding environments could
be of great benefit, the realization of applications has been hampered by the lack of their proper
control while keeping the nanotubes brightly fluorescent.
Here, we report on a dry stamping technique using single-crystalline anthracene as a medium
to transfer nanotubes on flat substrates and over trenches. The anthracene crystals sublime by
mild heating, leaving behind clean nanotubes and thus enabling bright photoluminescence.
Since this transfer process is compatible with confocal optical measurements, a nanotube witha desired chirality can be selected and placed at a designated position with a sub-micron
accuracy under in-situ photoluminescence monitoring. By repeating the deterministic transfer,
we demonstrate an assembly of crossed structure from selected nanotubes, where intertube
exciton transfer is observed at a single junction. Our method will facilitate fabrication ofphotonic and optoelectronic devices that use atomically defined nanomaterials, as well as basic
study on complex but well-controlled heterostructures of carbon nanotubes and othernanomaterials.
Part of this study is supported by JSPS (KAKENHI JP20H02558, JP19J00894, JP20K15137),
MIC (SCOPE 191503001), and MEXT (Nanotechnology Platform JPMXP09F19UT0075).
K.O. is supported by JSPS (Research Fellowship for Young Scientists). We thank T. Inoue and
S. Maruyama for the use of the CVD furnace and the thermal evaporator, as well as theAdvanced Manufacturing Support Team at RIKEN for technical assistance.
[1] R. Miura, S. Imamura, R. Ohta, A. Ishii, X. Liu, T. Shimada, S. Iwamoto, Y. Arakawa, and Y.K. Kato, Nat.
Commun. 5, 5580 (2014).
[2] F. Pyatkov, V. Fütterling, S. Khasminskaya, B. S. Flavel, F. Hennrich, M. M. Kappes, R. Krupke, and W. H.
P. Pernice, Nat. Photonics 10, 420 (2016).

Corresponding Author: Yuichiro K. Kato
Tel: +81-48-462-1449
Web: http://katogroup.riken.jp
E-mail: yuichiro.kato@riken.jp- 39 -

3-7
Circular dichroism in doped carbon nanotubesżRiichiro Saito, Md. Shoufie Ukhtary, Sake Wang, Taisei Maeda, Yuya Iwasaki
1

Department of physics, Tohoku University, Sendai 980-8578, Japan

In a doped carbon nanotube, we have observed an optical absorption spectrum for thepolarization of light in the direction perpendicular to the nanotube axis as a function of the
Fermi energy [1]. The occurrence of the optical absorption is understood by the excitation of
azimuthal surface plasmon of a doped carbon nanotube [2]. Circular dichroism (CD) is definedby inequivalent optical absorption for left-handed or right-handed circularly polarized light.
The occurrence of the CD in a chiral nanotube is related to the lack of the mirror symmetry of
the lattice structure [3]. Thus when the handness of the chiral nanotube (either left-handed orright-handed nanotube) is exchanged, sign of the CD value is exchanged accordingly. The
measurement of CD is an important characterization tool for identifying the enantiomer [4].
Since circular dichroism of undoped, “chiral” carbon nanotube is observed for enantiomer
separated nanotubes [4] and since the CD spectra as a function of the wavelength of the light iswell characterized theoretically [3], it is thus important for us to investigate the circulardichroism of doped carbon nanotubes theoretically. Since there are free carriers in the dopedcarbon nanotubes, the optical absorption of doped graphene nanotubes is calculated by thematrix element of current density with which the optical conductivity is calculated within linear
response theory (or the Kubo formula) [5]. In this presentation, we would like to discuss theorigin of off-diagonal optical conductivity for the occurrence of CD and show some calculated
results of CD of doped carbon nanotubes as a function of (n,m) [6].
This work is supported JSPS KAKENHI No. JPB18H01810.
References: Related papers are given in the references.
[1] D. Satco, et al., ACS Appl. Electron. Mater., 2, 195-203, (2020)[2] M. S. Ukhtary, R. Saito, Carbon (review), 167, 455, (2020). D. Satco, et al., Phys. Rev. B, 99, 075403, (2019).
[3] N. Sato, Y. Tatsumi, R. Saito, Phys. Rev. B, 95, 155436, (2017) .
[4] X. Wei, T. Tanaka, Y. Yomogida, N. Sato, R. Saito, H. Kataura, Nat. Comm. 7, 12899 (2016).
[5] R. Saito et al. unpublished.
[6] Y. Iwasaki, Master thesis, Tohoku University (2019).
Corresponding Author: Riichiro Saito
Tel: +81-22-795-7754, Fax: +81-22-795-6447,
Web: http://flex.phys.tohoku.ac.jp/
E-mail: rsaito@flex.phys.tohoku.ac.jp- 40 -


3-8

                                   = "*3 ) **3 ) *) "2"+ *2""+ "+ 52"":5."2*"43 5%""+ & 3 ) *"."+ "*2/- *$) *"4"52"".% 5) & **9"5$) *"&''('# )" "%**#'#")%&'**#'# $""#!'% &&% "&''(' &(( %  $""2#/.."./45#& 3 ) "6& "442"$4& %- 5$) "44& .4*/.3 #& $"53 & /'4) & *2%*3 4*.$40) 93 *$",02/0& 24*& 3 
3 *.$&  4) & *2 %*3 $/6& 29 ! 2& 6*/53  & 80& 2*- & .43  53 *.( *.%*6*%5", $"2#/. ."./45#& 3  ) "6& %& - /.3 42"4& %) *() & ,&$42*$",4) & 2- ",$/.%5$4*6*4*& 3   !3 42/.(,*() 4- "44& 2*.4& 2"$4*/."2*3 *.('2/-  & 8$*4/.3  ! 3 425$452& %& 0& .%& .4 4& .3 *,& 3 42& .(4) 3  7 *4)  5,42") *()  3 42& .(4) 4/7 & *() 4
2"4*/ !".%) *() 4) & 2- ",3 4"#*,*49 !4)&3&&8$&04*/.",02/0&24*&30/4&.4*",,902/6*%&6"2*/53
02/-*3*.("00,*$"4*/.3'/2&,&$42/.*$30)/4/.*$33425$452",-"4&2*",3".%4)&2-",-"."(&-&.4
"#2*$"4*/. /' -"$2/3$/0*$",,9 "33&-#,&% $"2#/. ."./45#&3 7*4) +&&0*.( 4)&*2 &8$&,,&.4
0)93*$", 02/0&24*&3 "2& 342/.(,9 %&3*2&% ".% %&4&2-*."4*/. /' 4)&*2 '5.%"-&.4", 0)93*$",
02/0&249 6",5&3 *3 02&2&15*3*4& '/2 4)& %&6&,/0*.( '5452& %&6*$&3 53*.( $"2#/. ."./45#&3
/7&6&2*.2&("2%4/-"$2/3$/0*$."./45#&"33&-#,*&3&.2*$)&%7*4)"3*.(,&$)*2",*49-/34/' 4)&*2 '5.%"-&.4", 0)93*$", 02/0&249 6",5&3 2&-"*.3 4/ #& $,"2*'*&% 9&4 . 0"24*$5,"2
3934&-"4*$+./7,&%(&/.4)&*2#2/"%#".%$/-0,&82&'2"$4*6&*.%&830&$42"".%4)&*2$)*2",*49
%&0&.%&.$&7)*$)*3&33&.4*",'/2%&3*(.*.(%&6*$&353*.($"2#/.."./45#&3"3/04/'5.$4*/.",
-"4&2*",3)"334*,,#&&.,*-*4&% 
&2& 7& 2&0/24 #2/"%#".% $/-0,&8 2&'2"$4*6& *.%&8 30&$42" /' 3*.(,&$)*2",*49&.2*$)&%
$"2#/. ."./45#& -&-#2".&3 2&&34".%*.( ".% /.3"00)*2& ."./45#& -&-#2".&3 7&2&'"#2*$"4&% 6*" '*,42"4*/. /' ."./45#& 3/,54*/. 02&0"2&% #9 3&0"2"4*/. -&4)/% 53*.( (&,$)2/-"4/(2"0)9 !)&4)*$+.&33&3/'4)&."./45#&-&-#2".&37&2&%&4&2-*.&%"3;.- 53*.( " 34&0 -&4&2 ".% ". "4/-*$ '/2$& -*$2/3$/0& & -&"352&% 2&',&$4*/. ".%42".3-*33*/. 30&$42" *. '"2*.'2"2&%4/6*3*#,& 7"6&,&.(4) 2&(*/. 53*.( 4)& $/-#*."4*/. /'
/52*&242".3'/2-*.'2"2&%30&$42/-&4&2  < &".%")/-&-"%&/04*$",3&450  < &)&'*44*.(".",93&3/'4)&/04*$",30&$42"2&6&",4)"44)&2&",".%*-"(*."290"243/'4)&$/-0,&82&'2"$4*6&*.%*$&3"44)&'*23435##".%&8$*4/.2&3/.".$&"2&;  ".%;  
2&30&$4*6&,9*( 524)&2-/2&7&/#4"*.&%".&-0*2*$",&802&33*/.4)"4$/-02&)&.3*6&,9
2&02/%5$&3 4)& $/-0,&8 2&'2"$4*6& *.%&8 30&$42" /' 6"2*/53 $)*2", 3425$452&3 4)*3 '"$*,*4"4&3%&3*(.*.(6"2*/53."./45#&-&-#2".&#"3&%/04*$",%&6*$&3
! " +,+/#    ! "#04       
! " 6        ! " ('+3        
! "+4*+*#3#    !"#-#-63#       !"+6      !"  1/1)+&#       133'4210&+0)65*13 +:#6%*+
'.     
/#+./+:#6%*++#'-:1516#%,2+)  92'3+/'05#..: &'5'3/+0'& %1/2.'9
3'(3#%5+7' +0&'9 42'%536/ 1( # /'/$3#0'
'03+%*'&8+5* 0#0156$'4

- 41 -

3-9
Unravelling the Thermal Conductivity of Semiconducting Carbon
Nanotubes Film with Different Doping LevelsżKan Ueji1, Yuya Matsuoka1, Takashi Yagi2, Yohei Yomogida1, Yota Ichinose1,
Akari Yoshida1, and Kazuhiro Yanagi1
12Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397 Japan
National Metrology Institute of Japan, National Institute of Advanced Industrial Science andTechnology, Tsukuba, Ibaraki, 305-8563, Japan

Flexible thin films, such as carbon-based materials, are promising candidates for flexible
electronics, sensors, and batteries. Although numerous studies on flexible materials havefocused on their electrical characteristics and methods for improving the electrical performance,
recently the thermal management of flexible thin films attracts a lot of interest for the
maximization of their device performances [1]. Therefore, the evaluation of the thermal
conductivity of flexible devices is one of important subjects. The time-domain
thermoreflectance (TDTR) method is an ultrafast laser-based technique (pump-probe method)that can measure the thermal conductivity of nanoscale materials using an aluminum (Al) layer
as a thermal transducer. Several studies [2-3] elucidated the thermal conductivity of thin films
with different potentials using Al as not only thermal transducers but also as electrodes throughelectrochemical procedures. However, use of Al electrodes limits target materials because Al iselectro-chemically reactive. Therefore, we have developed a unique TDTR system in which astable gold (Au) thin film is utilized as a thermal transducer instead of Al, thus making it
possible to measure the thermal conductivity of a wide range of flexible materials. In this study,
we investigated the relationships between the doping level and the thermal conductivity ofsemiconducting single-walled carbon nanotube (SWCNT) films by combining our TDTR
system with the electrolyte gating system.
A typical electrolyte gating method with stable Au electrodes controls doping level ofsemiconducting SWCNT films. The films have ambipolar characteristic with a clear on/off ratio(~ 103). Simultaneously, our developed TDTR system can evaluate the thermal conductivity of
SWCNT films perpendicular to the sample. Figure 1 shows the thermal conductivity
perpendicular to the semiconducting SWCNT film as a function of carrier density. The thermal
conductivity of SWCNT films is almost identical irrespective of the carrier densities andelectrical conductivity; thus implying that carriertransport does not contribute to the thermal
conductivity perpendicular to the sample,
suggesting that many inter-tube junctions prevent
coherent charge carrier transport [4]. The details of
this study will be discussed in the presentation.
References;[1] A. L. Moore et al., Materials today 17, 163–174 (2014).
[2] A. Sood et al., Nature communications 9, 1–9 (2018).
[3] J. Cho et al., Nature communications 5, 1–6 (2014).
[4] K. Ueji et al., to be submitted. (2020)
Corresponding Author: K. Ueji and K. Yanagi
E-mail: kueji@tmu.ac.jp and yanagi-kazuhiro@tmu.ac.jp- 42 -

Figure 1. The thermal conductivity (ț) of
SWCNT film as a function of its carrier
density (n).


3-10

        
       
1  '#!&# '!%*,&*,0' !#',"!0

!+ ,.( !).*" ++'%! $!( %-.,1, / .! $**'*")#%)!!,%)# 1/-$/ )%0!,-%.1
/&/*&    + )
).!,) .%*) ')-.%./.!"*, , *) !/., ')!,#1 !-! ,$     1/-$/
 )%0!,-%.1/&/*&    + )
!).!,"*, *'!/' , 1-.!( -   1/-$/ )%0!,-%.1/&/*&    + )

%!$'(!&'*!&$.$$)'&&&'+,**0,*!&$+)'&'&')&(+')%'$,$*!*),!$%+ '')'&+)'$$!&+ )'&+!)')!+$&)0($!&+'()'%!*!&%+)!$*')+ )%'$+)!'&-)*!'&-!*.!+ $/!!$!+0*+!$!+0&$! +
.! +   0(!$$0 ')&! ')'&'&+!&!& '%(',&* & *)- * '$ '(&+* ') ,* ' & $+)'& !!&+ ' +  ')'&    &+$0 +  ),+!- ')'&
'%(',&* *,  * ')0$ $!+ !,% & ')0$ )!$ '%(',&* - & -$'( !&')&'')'& %!*+)0!$*!&+  *    ).%'&*+)++ ++ ')0$)!$
'%(',& * '.  '' '&$+)'& ),+!'& ')  !-!& )!* +' &+0( #
'!!&+!&* +   *')(+!'& *(+) ' +  * + +) !%%)*!& !& *'$,+!'& '  ')0$ )!$
'%(',& * '. + + + '&,+!&*,&'*%!'&,+!& *(#*$%'*+
'%($+$0 !*(() $)$0
!&!+!& +  ',))& '+!-$+)'&'(!&'
0 ')0$ )!$  & + + # '!!&+ '  &'(* +.*&+!- 
& +  '+ ) & +  $+)!$
'&,+!-!+0'+ * +.*  & (-*2&8.( .119786&8.43 4+ 8-.7 ;460 *25*6&896*
!&)* '%() .!+  ()!*+!&)*5*3)*3(* 4+ ' **'*(0 (4*++.(.*38 &3) ( *1*(86.(&1 !$%    & + !*()*&++!'& . .!$$ +!$ +  (43)9(8.:.8= 4+ 8-* 56.78.3* +.12 1&(0 )487&3)8-* !  +.12
'- /()!%&+* * .$$ * &+8*6)45.3,*))487
$+)!*+),+,)'+ ',&+)+!'&'+ '(* +$ % 93, 9,6&-&&3)&.84   $ %"-4/. 9097-.2&  &0*34'9*8&1     
$ %"*,&;&"&2&7-.8&4>&0.  
$ %#-9.*8&1    
466*7543).3,98-46 &3&0&*1     &<      !*'-885;;;(-*20=97-99&(/5?+.+8-/5  2&.18&3&0&3&40. 20=97-99&(/5- 43 -

3-11
Porosity and Size Analysis of Carbon Nanotube Aggregates by Centrifugal
SedimentationżYuichi Kato1, Takahiro Morimoto2, Kazufumi Kobashi2, Toshiya Okazaki2
1 Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology (AIST), Osaka 563-8577, Japan
2 CNT-Application Research Center, AIST, Tsukuba 305-8565, Japan
Fine tuning of the structure for disentangled carbon nanotube (CNT) agglomerates isimportant to enhance the CNT composite material’s performance. Quantitative analysis ofporosity (߶) in liquid of the CNT agglomerates (when we disentangle CNTs, ߶ of CNT
agglomerates increases) has been limited despite its importance. Recently, we proposed ananalysis of ߶ and sedimentation particle size ( ‫ ) ܦ‬of the agglomerates by centrifugal
sedimentation.[1] We consider “inner fluid buoyancy”, that is the buoyancy caused by thesmaller fluid density inside the agglomerate that sediments in a density gradient than the fluid
outside (Fig. 1). For instance, we obtained ߶ǣ ͲǤͻͻͻͶ  ‫ܦ‬ǣ 20 m as for our CNT
agglomerates.[1] Here we introduce (A) how to analyze ߶ and ‫ ܦ‬by sedimentation. Moreover,
we report (B) generality of the inner fluid buoyancy and discuss accuracy of the analysis.
(A) If neither ߶ nor ‫ ܦ‬is known, you can estimate both simultaneously with equation (1).
߲ߩ௙
ܴ߱ଶ
‫ݐ‬
ȟߩ
ͳ
ͳ
ସ ߲ܴ
ሺͳሻ
ൌ
ሺͳ ൅ ߶‫ܦ‬ሻͳͲͺͲߟ‫ܦ‬ୢ‫ܦ‬ௌ்஽ ଶ ‫ݐ‬ௌ்஽ ȟߩௌ்஽ ‫ܦ‬ଶ ሺͳ െ ߶ሻ
where ‫ ݐ‬is sedimentation time, ȟߩ is the differenceడఘ

between apparent density and fluid density, ೑ is density
డோ
gradient, ߟ is viscosity, and ‫ܦ‬ୢ is diffusion constant ofsolute. The subscript STD indicates that the value is from astandard particle. You should measure ‫ ݐ‬for different
values of ߱. If either ߶ or ‫ ܦ‬is known, the other ismeasured at the lowest possible ߱ using the minimumడఘ

necessary ೑ to stabilize the sedimentation.
డோ(B) We measured ‫ ݐ‬of nylon-6 porous particles indensity gradient at different values of ߱. Inner fluid
buoyancy explains sedimentation of the particles well. Bothestimated values of ߶ and ‫ ܦ‬with equation (1) werereasonable. This result supports generality of the inner fluid Fig. 1 Schematic illustration of inner
buoyancy. We will discuss accuracy of the analysis andvalidate steady-state approximation, which is a prerequisite fluid buoyancy.
for equation 1.
[1] Y. Kato, T. Morimoto, K. Kobashi, T. Yamada, T. Okazaki, K. Hata, The Journal of Physical Chemistry C 123(2019) 21252-21256.
Corresponding Author: Yuichi Kato
Tel: +81-29-861-9275
E-mail: yuichi.katou@aist.go.jp- 44 -

3-12
XPS investigation revealing the activation of iron catalyst by a small
amount of noble metals without reducing gas towards the synthesis of tallcarbon nanotube forestżShunsuke Sakurai, Jinping He, Kenji Hata, Don N. Futaba
CNT Application Center, National Institute of Advanced Industrial Science and Technology(AIST), 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, JapanFor the synthesis of vertically-aligned carbon nanotube (CNT) by chemical vapor deposition(CVD) method, the importance of reducing gases such as hydrogen (H2) to prepare catalyst
nanoparticle array of transition metal such as iron (Fe) has been frequently investigated [1,2].
In the previous meeting, we reported an unexpected effect of noble metals (NM = iridium,rhodium, and platinum) added into Fe catalyst with a small fraction on the CNT synthesis
efficiency during the process without any reducing gases. Here we report XPS investigation
revealing the reduction of electronics status of Fe atoms triggered by the appearance of metallic
NM atoms.
Height of CNT grown without H2 reached to c.a. 500 ȝm only by <0.5 at% addition of NM
atoms as shown in Figure 1. XPS spectra of the catalyst substrate after annealing in helium
ambient shows the appearance of Fe2+ peak around 709 eV by adding small amount of iridium(Figure 2). The ratio of Fe2+ status drastically increased and saturated around 30% by adding
0.3 at% iridium. Further analysis on the effect of annealing temperature showed Fe2+ statusobserved by annealing at >500C, where metallic status of iridium atoms observed from Ir4f
peaks was also observed. Those results suggested the small amount of metallic noble metal
atoms located on the surface of oxidized iron can trigger the reduction of iron, and results inthe activation of iron catalyst for CNT growth. This work was supported by JSPS KAKENHI
Grant Number JP17K14090.

Fig. 1 CNT height vs noble metal
concentration.

Fig.
i 2 ((a)) XPS spectra ((Fe2p)) fromftheh samplel withi h 0.3at% iiridium.
idi(b) Fe2+ ratio and (c) peak positions vs iridium concentration.

[1] S. Sakurai, H. Nishino, D. N. Futaba, S. Yasuda, T. Yamada, A. Maigne, Y. Matsuo, E. Nakamura, M. Yumura,and K. Hata, J. Am. Chem. Soc. 134, 2148 (2012).
[2] S. Sakurai, M. Inaguma, D. N. Futaba, M. Yumura, K. Hata Small 9(21), 3584 (2013).
[3] S. Sakurai et al. Abstracts of the 52nd Fullerene-Nanotubes-Graphene General Symposium (2017).
Corresponding Author: S. Sakurai
Tel: +81-29-861-6205, Fax: +81-29-861-4851,
E-mail: shunsuke-sakurai@aist.go.jp- 45 -

~ Memo ~- 46 -

࣏ࢫࢱ࣮Ⓨ⾲
Poster Preview

1 P – 1 㹼 1 P – 27
2 P – 1 㹼 2 P – 27
3 P – 1 㹼 3 P – 26

1P-1
MWCNT growth mechanism using FeCl2 catalyst precursor
żTatsuhiro Hayashi, Takayuki Nakano, Yoku Inoue

Department of Electronics and Materials Science, Shizuoka Univ., Hamamatsu 432-8561, Japan

So far, we have developed a chloride-mediated chemical vapor deposition (CM-CVD) method
using iron chloride as a catalyst precursor for the synthesis of carbon nanotubes. The CNT forest
synthesized by this method has a high growth rate, density, and orientation. The CNT grows
higher than 2 mm with keeping high spin-capability [1]. However, the growth mechanism of
CNT has not been clarified in detail. In this study, we investigated the growth mechanism byobserving the cross-section of the CNT forest using a transmission electron microscope (TEM).
CNTs were synthesized on a heat-treated Si substrate. The CNT was grown at 820° C at apressure of 20 Torr with FeCl2 of 120 mg. C2H2 of 200 sccm was used for feedstock and Ar of
300 sccm for carrier gas. The catalyst behavior at the substrate interface was investigated by
TEM observation of the cross-section of samples with different growth times.
Figure 1 shows the cross-sectional TEM image and EDS image of the CNT synthesized on thesubstrate. It is observed that the tip of the catalyst is absorbed in the hollow part of the CNTfrom the substrate. It was also found that the iron layer was uniformly deposited on the substratesurface. Figure 2 shows cross-sectional TEM images of CNTs synthesized with growth timesof 30 seconds, 1 minute, and 2 minutes, respectively. The catalyst tip is sharpened in the hollow
part of CNT. It was found that as the CNTs grow over time, the absorption of catalyst into thehollow CNTs progresses further. From this observation, it is expected that the catalyst is wellmelted, and thus the diffusion rate of carbon inside catalyst is increased. This is considered tolead to suppression of amorphous carbon deposition on the catalyst surface. The above
expectation can be attributed to the fact that by the CM-CVD method, CNTs grow at high speed,
and the forest has a long catalyst life, resulting in a long length and high spinnability.

Fig1. Cross-sectional STEM image of a MWCNT grownon SiO2/Si substrate with a growth time of 2min.
(a)STEM image (b)STEM-EDS image of Fe[1] Y.Inoue, et al, Appl. Phys. Lett, 92, 213113 (2008)
Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356
Web: http://cnt.eng.shizuoka.ac.jp/
E-mail: inoue.yoku@shizuoka.ac.jp- 47 -

Fig2. Cross-sectional TEM image of a MWCNT
grown on SiO2/Si substrate with different growthtimes (a)30s (b)1min (c)2min

1P-2
Light-driven wavelength shifts of photoluminescence from single-walledcarbon nanotubes by functionalization with diarylethene derivativesżYasuto Nakagawa1, Takuya Nakashima3,
Tsuyoshi Kawai3, Tsuyohiko Fujigaya1,2,4, Tomohiro Shiraki1,2
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
Division of Materials Science, Nara Institute of Science and Technology, Nara 630-0192, Japan
4
Center for Molecular Systems, Kyushu University, Fukuoka 819-0395, Japan

Intensity / a.u.

Local chemical functionalization of single-walled carbon nanotubes (SWNTs) has achieved
defect doping to enhance their near-infrared (NIR) photoluminescence (PL) properties[1-4].
The locally functionalized SWNTs (lf-SWNTs) show new red-shifted PL (E11*) with enhanced
quantum yields compared to the original PL (E11) of pristine SWNTs. One of characteristicfeatures of the lf-SWNTs is that the E11* PL wavelength can be modulated depending on thefunctionalized molecular structures on their doped sites. For example, protonation of aminegroups by pH variation[2] and selective molecular binding based on molecular recognition anddynamic covalent bonding[3,4] at the functionalized aryl groups of lf-SWNTs have beenreported to induce E11* PL wavelength changes.
In this study, we synthesize lf-SWNTs functionalized withdiarylethene derivatives (DAE) that show photoisomerization
properties[5]. For the synthesis of DAE-functionalized lfSWNTs (lf-SWNTs-DAE), a diazonium salt having a DAE
moiety (DAE-Dz) was synthesized and reacted with the SWNTs
solubilized in a sodium dodecylbenzenesulfonate micellar
solution. In the PL spectrum of the lf-SWNTs-DAE (Figure 1),
peaks were observed at 980 nm and 1142 nm. The former one isassigned to E11 PL and the latter one, which has appeared after 900 1000 1100 1200 1300
the local chemical functionalization, is assignable to E11* PL ofWavelength / nm
the lf-SWNTs-DAE. When the lf-SWNTs-DAE solution was Figure 1 PL spectrum of lfirradiated with UV light, E11* PL peak was red-shifted by 3 nm.
In contrast, when irradiating with visible light to the solution, the SWNTs-DAE. Oex = 570 nm.
E11* PL peak was blue-shifted to the initial wavelength position. These observations indicatedthe reversible switching of the E11* PL wavelength for the lf-SWNTs-DAE triggered byphotoisomerization. Moreover, the photoswitching behavior was repeatedly observed over 5
times. The developed photoswitching function is expected to produce functionalized lf-SWNTs
for advanced applications such as bio/medical imaging and quantum communications.
[1] Y. Wang et al., Nat. Chem. 2013, 5, 840. [2] Y. Wang et al., J. Phys. Chem. 2015, 119, 3733.
[3] T. Shiraki et al., Chem. Comm. 2016, 52, 12972. [4] T. Shiraki et al., Chem. Eur. J. 2018, 24, 19162.
[5] T. Kawai et al., Eur. J. Org. Chem. 2017, 17, 2451.
Corresponding Author: T. Shiraki
Tel/Fax: +81-92-802-2841/ +81-92-802-2841
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: shiraki.tomohiro.992@m.kyushu-u.ac.jp- 48 -

1P-3
Fabrication of Carbon Nanotube Thin Films for Flexible Transistor
Applications using a Cross-linked Amine PolymerżKaisei Matsumoto 1, Kazuki Ueno1, Jun Hirotani2 , Yutaka Ohno2,3, and Haruka Omachi1,41Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya
464-8602, Japan2
Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya
464-8601, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan
4
Research Center for Materials Science, Nagoya University, Nagoya, 464-8602, Japan
Owing to their remarkable properties, single-walled carbon nanotube thin film transistors(SWCNT-TFTs) are expected to be used in various flexible electronics applications. To
fabricate SWCNT channel layers for TFTs, solution-based film formation on a self-assembled
monolayer (SAM) covered with amino groups is commonly used. However, this method uses
highly oxidized surfaces, which is not suitable for flexible polymeric substrates.
Herein, we report a solution-based SWCNT film fabrication using methoxycarbonylpolyallylamine (Moc-PAA)[1]. The NH2-teminated surface of the cross-linked Moc-PAA
layer enables the formation of highly dense and uniform SWCNT networks on both rigid andflexible substrates (Fig. 1a). TFTs that use the fabricated SWCNT thin film exhibited
excellent performance with small variations (Fig. 1b). The presented simple method to access
SWCNT thin film accelerates the realization of flexible nanoelectronics.

Fig. 1 (a) Schematic diagram of the fabrication of the SWCNTs thin film on the Moc-PAA layer. (b)Photograph of SWCNT TFT on the flexible PEN substrate.

[1] K. Matsumoto, K. Ueno, J. Hirotani, Y. Ohno, H. Omachi, Chem. Eur. J., 26, 6118 (2020).
Corresponding Author: H. Omachi
Tel: +81-52-789-3660,
Web: https://sites.google.com/view/haruka-omachi/
E-mail: omachi@chem.nagoya-u.ac.jp- 49 -

1P-4
Structure-dependent solvatochromic shifts of excitonic photoluminescencefrom locally functionalized single-walled carbon nanotubesżYoshiaki Niidome1, Tsuyohiko Fujigaya1,2,3, Tomohiro Shiraki1,2
1 Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3 Center for Molecular Systems, Kyushu University, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) with semiconducting features show near infrared
photoluminescence (PL) and whose property is determined by the exciton that is a bound stateof an electron and a hole by Coulombic interactions. The excitonic PL energies are sensitively
changed depending on the surrounding environments [1]. Recently, doping of structural defects
such as oxygen or sp3 carbon to the crystalline lattice of the carbon network of SWNTs has beenreported by local chemical functionalization to improve the excitonic PL properties[2,3]. The
locally functionalized SWNTs (lf-SWNTs) emit red-shifted and brighter E11* PL compared tooriginal E11 PL of pristine SWNTs. It is due to the creation of the doped sites that work as new
emissive sites with narrower bandgaps and exciton trapping features. Vert recently, we havereported that the sp3 carbon doped sites of aryl modified lf-SWNTs showed highly sensitive PL
energy changes based on solvent environments compared to E11 PL of pristine SWNTs[4]. The
finding indicates that excitonic properties in the lf-SWNTs would be remarkably modulated by
the defect doping effects.
Here, we examined solvatochromic shifts of the E11* PL from oxygen-doped lf-SWNTs (lfSWNTs-O) (Fig. 1). lf-SWNTs-O were synthesized through the reaction between ozone and thesolubilized SWNTs in D2O using sodium dodecylbenzenesulfate micelles. Various organic
solvent environments were created by mixing a water-immiscible organic solvent into theaqueous lf-SWNTs-O solution[4,5]. From the PL spectral changes of the lf-SWNTs-O after thesolvent injection, the E11* PL was found to be red-shifted with dependence on the mixed organic
solvents. The E11* PL from ether-type doped sites (~1125 nm) showed larger shifts comparedto those of the E11 PL. In sharp contrast, the E11* PL from the epoxide-type doped sites (~1250nm) of the lf-SWNTs-O was insensitive to the solvent environment changes. These results
indicate that the excitonic PL properties strongly depend on the doped site structures of lfSWNTs. In this presentation, comparison with the E11* PL shifts of sp3 carbon doped sites of
lf-SWNTs will be also discussed.
[1] Y. Ohno et al. Phys. Status Solidi B. 244, 4002 (2007).
[2] R. B. Weisman et al. Science. 330, 1656 (2010).
[3] Y. Wang et al. Nat. Chem. 7, 715 (2013).
[4] T. Shiraki et al. Chem. Commun. 55, 3662 (2019).
[5] K. J. Ziegler et al. Phys. Chem. Chem. Phys. 12. 6990 (2010).
Fig. 1. Schematic image of lf-

Corresponding Author: T. Shiraki
Tel/Fax: +81-92-802-2841
E-mail: shirak.tomohiro.992@m.kyushu-u.ac.jp

SWNTs-O with the ether-type
doped site and E11* PL emission.

- 50 -

1P-5
Visualization of thermal transports on bundled carbon nanotubes bymonitoring evaporation of gold nanoparticlesżHiromu Hamasaki1, Seiya Takimoto1 and Kaori Hirahara2
12

Dept. of Mechanical Engineering, Osaka University, Osaka 565-0871, Japan
Dept. of Mechanical Engineering and Center for Atomic and Molecular Technologies,
Osaka University, Osaka 565-0871, Japan

Thermal conductivity is one of the most fascinating property of single walled carbon
nanotubes (SWCNTs). Most assemblies of SWCNTs (ropes, films and so on) consist of thebundles, therefore the thermal transport of assemblies should strongly depend on properties ofthe bundles. Bundles of SWCNTs are common structure often seen in the synthesized CNTs. In
a close-pack bundle, parallelly aligned CNTs are tightly bound each other by van der Waals
force. Previously, thermal conductivities of single bundles parallel to axial direction of CNTs
have been investigated [1]. However, that along the perpendicular direction was still unclear.
This may be because a single bundle size along perpendicular direction is much smaller thanparallel direction. In order to investigate thermal conductivity along the perpendicular direction,
we conducted visualization of the thermal transport in a bundle of SWCNTs by in-situ
transmission electron microscopy (TEM).
Prior to TEM observation, gold nanoparticles were deposited on SWCNTs bundles (MEIJOSO) by vapor deposition. The diameter of gold particles was less than 10 nm. In TEM, anelectrode probe tip was made contact to a bundle protruded from an edge of the substrate, andvoltage was applied between the tip and substrate. Joule heat generated mainly at the contact
point flowed toward the end of free-standing bundle, and we visualized how heat is transported
in the bundle by monitoring the evaporation of gold particles. As the result, significant
anisotropy for thermal transport between parallel and perpendicular direction to the bundle wasobserved as shown in Fig. 1. Thermal conductivity in the perpendicular direction was estimatedfrom the experimental results with the aid of calculations, to be ~1/500 of that in parallel
direction.
This work was supported by JST CREST Grant Number JPMJCR17I5, Japan.

Fig. 1 TEM images of the bundle after heating with (a)ͻͲɊ and (b)ͳ͵ͷɊ.
[1] Y. Feng et al., Appl. Phys. Lett., 112, 191904 (2018).
Corresponding Author: H. Hamasaki
Tel: +81-6-6879-7307
E-mail: hamasaki@ne.mech.eng.osaka-u.ac.jp- 51 -

1P-6
Measurement of Zeta potential of single-walled carbon nanotubes in nonpolar organic solventżTaiki Ishii1, Angana Borah1, Naoki Tanaka1,2, Tsuyohiko Fujigaya1,2,3
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
CMS, Kyushu University, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) are promising material for electronic andmechanical materials for next generation owing to their excellent properties. They aresynthesized as mixtures of semiconducting SWNTs (s-SWNTs) and metallic SWNTs (mSWNT). Up to date, various separation method of s-SWNTs and m-SWNTs such as
chromatography and electric-field-induced layer formation (ELF) method were realized mainly
in aqueous system [1,2], while an extraction of only s-SWNTs was realized in non-polar organic
solvents such as toluene [3,4] have been reported. However, the mechanism of these separationand extraction methods had not been understood. Recently, in the ELF method, separation
mechanism was explained that the degree of negative charge was smaller for m-SWNTs than sSWNTs due to the hole doping and the difference of the surface charge between s-SWNTs andm-SWNTs in water played an critical role in response to an applied electric field [5]. We
consider that the similar mechanism was applied for extraction method in organic solvent.
In this study, we measured the surface charge of s-SWNTs and m-SWNTs in organic solvent
to investigate the mechanism of the extraction in organic solvent, in which the Zeta potential
measurements were used to monitor the surface chargeof the SWNTs. For the s- and m-SWNTs, commerciallyavailable m-SWNTs (NanoIntegris) and s-SWNTs
sorted by Flavin extraction method [4]. We found that
the Zeta potential of the m-SWNTs was approximately
11.9 mV, while that of s-SWNTs was 32.0 mV. Since thedispersion stability test showed the aggregation only forthe m-SWNTs, we consider that the lower charge
repulsion of m-SWNTs in non-polar solvents resulted in
the aggregation of m-SWNTs and extraction of s-SWNT
was realized.
[1] H. Liu et al., Nat. Commun., 2, 309 (2011).
[2] M. S. Arnold et al., Nat. Nanotechnol., 1, 60 (2006).
[3] F. Chen et al., Nano Lett. 7, 10 (2007)[4] Y. Kato et al., Chem. Lett., 44, 556 (2015).
[5] Y. Kuwahara et al., J. Phys. Chem. C., 123, 6 (2019)
Corresponding Author: T. Fujigaya
Tel/Fax: +81-92-802-2842,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 52 -

Fig. 1 Illustration of the possible differenceof dispersion stability between s-SWNT
and m-SWNT.

1P-7
Near-Infrared Fluorescence Immunoassay Using Streptavidin-Conjugated
Oxygen-Doped Carbon Nanotubes
˕Keiko Kojima1,2, Yoko Iizumi2, Minfang Zhang2, and Toshiya Okazaki2,1
1

2

Department of Chemistry, The University of Tsukuba, Tsukuba 305-8577, Japan
CNT-Application Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba 305-8565, Japan

Single-walled carbon nanotubes (CNTs) have been introduced to near-infrared (NIR)
immunoassay systems for recent years. Compared with other NIR molecules and materials,
CNTs have several advantages such as strong emissions, large Stokes-shifts and high photostabilities as NIR labels. Previously, our research group reported that immunoprecipitation (IP)was successfully conducted between IgG-conjugated CNTs and protein G magnetic beads.
Although the system can ideally measure target analytes at concentrations as low as 600 pmol/L,
the practical reaction efficiency was insufficient, around ~18% [1] .
To improve the IP reaction yield, we here made thestreptavidin-conjugated oxygen-doped CNTs (o-CNT-SA) thatcan selectively bind with biotin molecules. The o-CNTs [2]original o-CNT-SA solutions. By adjusting the concentrationsof o-CNTs, SA-PEG and PL-PEG, the IP reaction yield
increased up to 78 %. In this symposium, we will show thedetailed experimental procedures and discuss the proper
structure of the o-CNT-SA NIR label based on the obtained
results.

Fig. 1. Flow-chart of the present
IP experiment.
15000

Intensity (a.u.)were coated by streptavidin which combined withphospholipid polyethylene glycol (SA-PEG). While IgG forms
a 1:1 complex with an antigen, SA can bind biotin molecules
at four sites. Some amounts of phospholipid polyethylene
glycol (PL-PEG) were added to stabilize the dispersion stateof o-CNT-SA. For assessing the IP reactivity, the fluorescentintensity ratio between the eluted solution and the original oCNT-SA dispersion was calculated (Fig. 1). Figure 2 shows
the NIR fluorescence spectra observed from the eluted and theo-CNT-SA solution
Eluted solution

10000

5000

0
1000

[1] Y. Iizumi et al., ACS Appl. Mater. Interfaces, 5, 7665 (2013).
[2] Y. Iizumi et al., Sci. Rep., 8, 6272 (2018).
Corresponding Author: T. Okazaki, E-mail: toshi.okazaki@aist.go.jp- 53 -

1200

1400

Wavelength (nm)Fig. 2. Fluorescence spectra
observed from the original oCNT-SA and the eluted solutions.

1P-8
Effects of channel length on performance of transparent solar cellwith monolayer WS2
X. He1, T. Kaneko1, and T. Kato1,2
1

Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

Layered transition metal dichalcogenide (TMD) is known as a true 2D material withexcellent semiconducting properties. TMD is one of the most attractive materials for futuretransparent and flexible optoelectrical devices due to their atomically thin structure, band gap
in visible light range, and high optical transparency. Those merits of TMD have not been
applied for transparent and flexible solar cell, which is attracted intense attention as anext-generation energy harvesting technology.
Recently, we have developed a new fabrication process of TMD-based solar cell [1]. In our
process, Schottky type device configuration is utilized, which can be simply formed byasymmetrically contacting electrodes and TMD. The power conversion efficiency clearly
depended on the work function difference between two electrodes (WF), and a higher
efficiency could be obtained with higher WF (Pd-Ni). Based on the optimizations ofelectrodes and distance, the power conversion efficiency (PCE) can be reached up to 0.7 %,which is the highest value for solar cell with similar TMD thickness [1].
To further improve the PCE, optimization of device structures is important. As one of the
key parameters, we focus on the channel length (Lch) between Schottky- and Ohmic-side
electrodes (Fig.1) We found that the best Lch showing highest PCE (Lchbst) strongly depends
on the kinds of electrodes and layer numbers of WS2. For the Ni electrode, Lchbst is 4 um,
while Cu shows much shorter Lchbst(0.5 um). Double and triple-layer
WS2 also show shorter Lchbst thanthat of monolayer WS2 even with Nielectrode. These can be attributed to
the Fermi pinning effect, which
exists when electrode is in contact
with the two-dimensional WS2.
Stronger pinning effect (Ni or
monolayer) may have relatively
longer Lchbst than that (Cu or few
Fig.1 (a) Typical optical image of Schottky solar cell device
layer) with weaker pinning effects.
This finding is very important for with monolayer WS2. (b) The dependence of PCE on
further improving the performances different Lch for Ni and Cu electrode devices.
of the transparent and flexible solar
cell.

[1] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato, Sci. Reports 7, 11967 (2017).
Corresponding Author: Xing He
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: he.xing.q7@dc.tohoku.ac.jp- 54 -

1P-9
Robust easy-plane 2D ferromagnetism in Cr1/3NbSe2 ultrathin filmsżYuki Majima1, Bruno Kenichi Saika1, Hideki Matsuoka1, Masaki Nakano1,2, Satoshi
Yoshida1, Kyoko Ishizaka1,2, Yoshihiro Iwasa1,21Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
2
RIKEN Center for Emergent Matter Science, Saitama 351-0198, Japan

In transition-metal dichalcogenides (TMDCs), there have been found many interesting
physical properties, such as valley-contrasting optical phenomena[1], 2D superconductivity[2]and so on. In addition, the van der Waals gaps in TMDCs allow intercalation of a wide variety
of atoms or molecules. In particular, when the magnetic ions are intercalated, various magnetic
ordering can be formed dependent on their intercalation level, although their properties at the2D limit are so far less studied probably due to technical difficulty in exfoliation. Our groupinstead has employed molecular-beam epitaxy (MBE) and demonstrated that V5Se8 thin films,
in which V atoms are self-intercalated into the host VSe2, display intrinsic ferromagnetism[3],while the bulk counterpart is an antiferromagnet.
In this work, we succeeded in synthesizing epitaxial thin films of Cr1/3NbSe2. Figure 1 shows(a) the crystal structure of Cr1/3NbSe2 and (b) the magnetization-temperature relation of the 6
nm-thick film. We found that the film shows ferromagnetism at the Curie temperature of 100
K with strong easy-plane anisotropy. Also we found that controlling the intercalation level ispossible just by tuning the film growth condition. In the presentation, we will report the MBE
growth process in detail and discuss their structural, electrical and magnetic properties.

+˷FF㻌

7&f.㻌
+FF㻌

Fig. 1 (a) Crystal structure of Cr1/3NbSe2. Mother material (NbSe2) and intercalated Cr atoms are also indicated.
(b) Magnetization-temperature relation of the 6 nm-thick film.

[1] J. R. Schaibley et al., Nature Reviews Materials 1, 16055 (2016).
[2] Y. Saito et al., Nature Reviews Materials 2, 16094 (2017).
[3] M. Nakano et al., Nano Lett. 19, 8806 (2019).
Corresponding Author: M. Nakano
Tel: +81-03-5841-6871, Fax: +81-03-5841-6822, E-mail: nakano@ap.t.u-tokyo.ac.jp- 55 -

1P-10- 56 -

1P-11
Survival of Sub-nm Carbon Nanotubes under Femtosecond Laser Shot:
A TDDFT StudyżYoshiyuki Miyamoto1
1

Research Center for Computational Design of Advanced Functional Materials, National
Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono,
Tsukuba 305-8568, Japan
Selection of narrow carbon nanotubes (CNTs) with diameters less than 1 nm is useful for
semiconductor technologies thanks to their substantial energy bandgap. Yet, such thin CNTs are
unstable due to their internal strain energy [1], thus thermal processes are not feasible tosynthesize narrow CNTs. Chemical
vapor deposition on catalytic alloys withspecific surface condition [2] can make
CNTs with unique chiral index withdiameter less than 1 nm, but thistechnique does not suit for massive
production. On the other hand, current
work theoretically proposes application Fig. 1. Survival of (8,0) CNTs in an array of (8,0) and (14,0)of linearly polarized femtosecond laser to
CNTs. Blue arrows denote the simulation time and a red
select thin CNTs from CNT arrays withpolarization vector of laser perpendicular arrow denotes the polarization vector of the laser. All figures
to tube axes.
are from direction nearly parallel to tube axes and part of
Figure 1 demonstrates the ab-initio periodic structures of the CNT arrays are displayed.
electron-ion dynamics of an array of (8,0)
and (14,0) CNTs showing breakage of the (14,0) tubes but survival of the (8,0) tubes. This
simulation assumed laser wavelength 800 nm and the pulse width 10 fs with maximum laser
field as 5 V/Å which is under accessible condition with current laser technology. The similar
selection in armchair CNTs will also be demonstrated and physical origin of the selection will
be discussed [3]. The calculation was performed by time-dependent density functional theory[4] using the code FPSEID [5].
This work has been performed under supports from the TACMI (Technical Alliance for Coollaser Machining with Intelligence) project commissioned by the New Energy and Industrial
Technology Development Organization (NEDO), and from JSPS KAKENHI grant number
JP19K05103. All calculations presented here were performed by using supercomputer systems
in Cyberscience Center in Tohoku University and Cybermedia Center in Osaka University.
[1] D. Sánchez-Portal et al., Phys. Rev. B 59
59, 12678 (1999).
[2] F. Yang et al., Nature 512, 64 (2014).
[3] Y. Miyamoto, Nano Lett. 20, 4416 (2020).
[4] E. Runge and E. K. U. Gross, Phys. Rev. Lett 52, 997 (1984).
[5] O. Sugino and Y. Miyamoto, Phys. Rev. B59, 2579 (1999).
Corresponding Author: Y. Miyamoto
Tel: +81-29-849-1498, Fax: +81-29-861-3171,
Web: (our department home page is under construction)
E-mail: yoshi-miyamoto@aist.go.jp- 57 -

1P-12
One dimensionality of the thermoelectric properties insemiconducting single walled carbon nanotubesżYota Ichinose1, Manaho Matsubara2, Yohei Yomogida1, Akari Yoshida1, Kan Ueji1, Kaito
Kanahashi3, Jiang Pu4, Taishi Takenobu4, Takahiro Yamamoto2, and Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo, Japan
Department of Physics, Tokyo University of Science, Shinjuku, Tokyo, Japan3
Department of Advanced Science and Engineering, Waseda University, Tokyo, Japan
4
Department of Applied Physics, Nagoya University, Nagoya, Japan
2

Thermoelectrics is an important technology for the efficient conversion of waste heat toelectrical power. Theoretical studies suggested that lowering the dimensionalities can enhancethermoelectric (TE) performance due to the following two factors, (1) the quantum
confinement effect and (2) the reduction of thermal conductivity.1 The enhancement of TE
performance by the reduction of thermal conductivity has been confirmed, however,experimental verification of how low-dimensional electronic structures enhance TE
performance remains elusive. Single-walled carbon nanotube (SWCNT) is a very good model
for studying relationships between one-dimensional (1D) electric structure and TE properties.
Our recent study revealed the unique 1D characteristic in their TE properties.2 For example, inconventional metallic materials, the increase of their conductivity induces the decrease of
their Seebeck coefficient, which is known as TE trade-off. By contrast, in the case of metallic
SWCNTs, the trade-off is violated. We can observe the enhancement of both Seebeckcoefficient and conductivity because of the presence ofvan-Hove singularity (vHs) in the density of states, reflecting
1D metallic electronic structures.2 In the case of
semiconducting SWCNTs, however, it is difficult to discuss
1D characteristics in their TE properties, because we cannot
distinguish three, two or one-dimensional characteristics inthe line shapes of Seebeck coefficient as a function of
Fermi-level.
However, a recent theoretical study pointed out theimportance of “thermoelectrical conductivity,” L12.3 Only inthe case of 1D materials, a sharp peak structure can beobserved around 1st vHs in L12. Thus, in this study, weinvestigated L12 of semiconducting SWCNTs with various
chiralities and 2D materials. Fig. 1 shows L12 as a function ofgate voltages in semiconducting SWCNTs with various
chiralities. Only when we prepare (6,5) SWCNTs with thepurity more than 99%, we could observe a sharp peakstructure in L12. This sharp peak structure reflects vHs
structure. In this talk, we will discuss the background.
References:[1] Hicks & Dresselhaus, PRB 47, 16631 (1993) [2] Ichinose et al., Nano
Lett. 19, 7370 (2019) [3] Yamamoto & Fukuyama, JPSJ 87, 114710(2018)
Corresponding Author: K. Yanagi, E-mail: yanagi-kazuhiro@tmu.ac.jp- 58 -Fig
1.
Thermoelectricalconductivity, the L12 term, of (6,5),(9,4),(10,3)
andSemi(semiconducting SWCNT withdiameter of 1.4 nm) as a function ofgate voltage.

1P-13
Simple and Effective Method to Control Photoluminescence Properties ofSingle-walled Carbon Nanotubes by Ultrasonic IrradiationżYui Konno1, Akane Nishino1, Michio Yamada1, Yutaka Maeda1, Saki Okudaira2, Yuhei
Miyauchi2, Kazunari Matsuda2, Jun Matsui3, Masaya Mitsuishi4, Mitsuaki Suzuki5
1

Department of Chemistry, Tokyo Gakugei University, Tokyo 184-8501, Japan
2
Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan3
Department of Material and Biological Chemistry, Yamagata University, Yamagata 9908560, Japan
4
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai
980-8577, Japan
5
Department of Chemistry, Josai University, Saitama 350-0295, Japan
It has been reported that the sidewall functionalization is effective to control the local band
structures of single-walled carbon nanotubes (SWNTs), resulting in emergence of new redshifted photoluminescence (PL) peaks in the near-infrared region [1,2,3]. This allows theexcitation with the E11 energy to afford increase of the PL excitation efficiency, which isadvantageous for bioimaging and so on. For the PL measurements, the use of low concentrated
and individually dispersed solution of SWNTs is preferred for avoiding concentrationquenching and unwanted interaction with other chiral SWNTs [4]. However, the sonication of
SWNTs is also known to shorten and damage the SWNTs [5,6]. Meanwhile, surfactant
decomposition has been studied and reported that the decomposition proceeds via generationof radical species from water upon ultrasonic irradiation [7]. Here we present the effects ofultrasonic irradiation on the PL properties of SWNTs under various conditions including
different surfactants, concentration of SWNTs, and atmospheres.
In this study, sodium cholate (SC), sodium dodecylbenzene sulfate (SDBS), and sodium
dodecyl sulfate (SDS) were selected as typical surfactants to disperse SWNTs in D2O. To clarify
the effect of ultrasonic irradiation, a small amount of SWNTs (initial concentration: 12.5 mg/L)
was sonicated and centrifuged to prepare the SWNTs dispersion. The characteristic absorption
and PL peaks of SWNTs were observed from thesupernatant prepared using SC. On the other hand, thesupernatant prepared using SDS exhibited low intrinsic
absorption and PL peaks of SWNTs. When SDBS wasused, the dispersibility of SWNTs was found to be as goodas that obtained with SC. In this case, it is noteworthy thatthe new PL peaks at 1043 and 1118 nm emerged
accompanied by decreasing the intrinsic PL peaks of
SWNTs, as seen in the oxidation of SWNTs [1, 2]. The
details of the control of the PL properties of SWNTs by Fig. 1 PL spectra of SWNTs dispersion.
Surfactant and sonication time areultrasonic irradiation will be discussed.
shown in the figure.

[1] R. B. Weisman et al. Science 330, 1656 (2010) [2] Y. Maeda et al. J. Am. Chem. Soc. 135, 6356 (2013) [3] Y.
Wang et al. Nat. Chem. 5, 840 (2013). [4] R. B. Weisman et al. Science 297, 593 (2002). [5] M. D. Lay et al. J.
Phys. Chem. C 114, 12490 (2010). [6] F. Hennrich et al. J. Phys. Chem. B 111, 1932 (2017). [7] M. Ashokkumar
et al. Aust. J. Chem. 56, 1045 (2003).
Corresponding Author: Y. Maeda
Tel: +81-42-329-7512
E-mail: ymaeda@u-gakugei.ac.jp- 59 -

1P-14- 60 -

1P-15
Simple and highly efficient intermittent operation circuit
for triboelectric nanogenerator‫ۑ‬

Atsushi Kawaguchi1, Masahiro Matsunaga2, Haruki Uchiyama1,
Jun Hirotani1 and Yutaka Ohno1,2

1

2

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan

Voltage (V)Voltage (V)With the arrival of the Internet of Things (IoT) society, there is an increasing demand for
new power supply technologies to drive a large number of sensors. [1] Energy harvesting is
attracting attention as an alternative of batteries for IoT sensors. In the previous study, we
reported high output, transparent, and stretchable triboelectric nanogenerator (TENG) using
carbon nanotube (CNT) thin film. [2] Since the TENGs generate the pulsed voltage, a power
management circuit to generate DC voltage sufficient for driving sensor devices is necessary.
To achieve this, we propose a simple and highly efficient intermittent operation circuit.
The proposed circuit is composed of bridge
rectifiers, a capacitor, a programmable unijunction
transistor (PUT), and two resistors as shown in Fig.
1. The pulsed output voltage of TENG is rectified
and stored in the capacitor. The PUT acts as aswitch which turns on when the voltage stored in
the capacitor reaches a threshold determined byexternal resistors, so that, the stored energy is
supplied to the load. Then, PUT returns to the off
Fig. 1 Intermittent operation circuit consistingstate and the capacitor starts being charged again.
of TENG and PUT.
We used the CNT based stretchable TENG. [2]The output voltage was generated by touching the
4 Capacitor
surface of the TENG with a nitrile glove-worn hand3
at a frequency of 1 Hz. The peak power density was2reached up to 8.0 W/m2 at the load resistance of 30
1
M:Figure 2 shows the voltages across the0capacitor and the load resistance of 1 M:,
Standby Operation
perat
4
respectively. The stored energy was intermittently
3
supplied to the load with intervals of about 14 s. The
2efficiency through the PUT was reached up to 89%.
1
We also demonstrated driving the electronic device
Load0
using the TENG and proposed circuit.
0
10
20
30
40
50
Time (s)[1] D. Oliveira et. al., Electronics 9, 111 (2020).
[2] M. Matsunaga et al., Nano Energy 67, 104297 (2020).

Fig. 2 Voltages across capacitor (upper) andload resistance (bottom).

Corresponding Author: Y. Ohno, Phone: +81-52-789-5387, E-mail: yohno@nagoya-u.jp- 61 -

1P-16
Carbon nanotube-Cu through-Si-via interposer with Cu-level electricalconductivity and Si-comparable thermal expansionżGuohai Chen1, Rajyashree Sundaram1, Atsuko Sekiguchi1, Kenji Hata1, Don N. Futaba1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba 305-8565, Japan

In microelectronic packaging, an interposer is an intermediate substrate acting as a bridgeconnecting the fine pitch I/Os at the dies to the coarse pitch package at the substrate. A throughsilicon-via (TSV) interposer is a very common type with copper (Cu) filled inside the holes(“vias”) as interconnections. However, as the size of electronic devices decreases, heatgeneration significantly increases inside the miniature devices which results in deterioration inlifetime and reliability. Commonly, the deterioration originates from delamination or break at
the interface due to the strain induced by the mismatch of the coefficient of thermal expansion(CTE) between Si and Cu. Therefore, the demands for interposer materials with high electricalconductivity but low CTE are growing.
Here, we demonstrate the fabrication of carbon nanotube-copper (CNT-Cu) composite TSVinterposer (Fig. 1) to combine the high electrical conductivity of Cu with the low CTE of CNTs
using a bottom-up and assembly approach. In short, an array of high aspect ratio CNT forest
pillars was synthesized on lithographically patterned catalyst using water-assisted chemical
vapor deposition [1-3]. Second, the CNT pillar arrays were infiltrated with Cu using a two-stage
electrodeposition process developed previously [4-5]. Third, the CNT-Cu pillars were inserted
into the prefabricated TSV wafer. Forth, the completed TSV interposer was released from thegrowth substrate. The CNT-Cu composite
showed a Cu-level electrical conductivity(~2.5×105 S/cm) and Si-comparable CTE(~7×10-6/K). The CTE mismatch between
CNT-Cu and Si was greatly reduced, lessthan 1/5 of that between Cu and Si. Finally,
we demonstrate the operation in several
applications highlighting the high electricalconductivity and small CTE mismatch.
Fig. 1 CNT-CuFi
CNT C TSV iinterposert
These results demonstrate the potential of
the CNT-Cu TSV interposer in microelectronic packaging.
[1] G.H. Chen et al. ACS Nano, 7 (11), 10218 (2013).
[2] G.H. Chen et al. Nanoscale, 8 (1), 162 (2016).
[3] G.H. Chen et al. ACS Biomater. Sci. Eng., 4 (5), 1900 (2018).
[4] C. Subramaniam et al. Nat Commun, 4, 2202 (2013).
[5] R. Sundaram et al. J Mater Res Technol, 9 (3), 6944, (2020).
Corresponding Author: G.H. Chen
Tel: +81-29-861-4416
Web: https://unit.aist.go.jp/cnta/ja/member/Guohai.html
E-mail: guohai-chen@aist.go.jp- 62 -

1P-17
Electrical detection of X-ray by using coplanar CNT thin-film electrodes
on PEN substrateżSatoru Suzuki1, Hiroyuki Matsuda2, Takahiro Ishikawa3, Teruaki Konishi3,
Tsuyoshi Hamano3, Hiroshi Ajiki1, Yutaka Ohno4,5, Toshio Hirao3, Satoshi Ishii1
1

Department of Physics, Tokyo Denki University, Saitama 350-0394, Japan
Department of Engineering, Shinshu University, Nagano 380-8553, Japan
3
National Institute for Radiological Sciences, Chiba 263-8555, Japan
4
Department of Electronics, Nagoya University, Nagoya 464-8602, Japan
5
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan
2

Radiation exposure to the eye lens has been a problem for a curer in the radiation therapy.
Then, the transparent real-time dosimeter is required to measure the eye dose without
disturbing their eyesight. In order to develop the transparent detector, transparency isnecessary not only for the substrate but also for the electrode.
Carbon nanotube is known to have transparency along with
1 mmradiation tolerance [1]. In this study, we have fabricated thePEN sheet
125 Pmcoplanar CNT thin-film electrodes on the PEN sheet andFig.1 Device structure.
conducted the direct electrical detection of X-ray using these.
Figure 1 shows the schematic structure of the device, where
X-ray onmGy/secOffthe distance between the CNT thin-film electrodes was 1 mm.
36.10
The electrodes were patterned on the PEN substrate by splay
20.54
coating of the single-walled CNT dispersion in IPA (0.2 wt%)
10.18
using the metal mask. The device was placed inside of the
5.57
2.36
stainless chamber under a vacuum of 1.010-2 Pa. X-ray with
1.18
an effective energy of 83 keV was irradiated to the device fromoutside of the chamber at a bias voltage of 10 V. The current of
the device was measured in real time during turning on and off Fig.2 Time dependence ofthe current.
of the irradiation at each dose rate.
The current was confirmed to respond to the X-ray
irradiation, as shown in Fig. 2. Moreover, the generated current
increased linearly with the dose rate below 10.18 mGy/sec, as
shown in Fig. 3, although it no longer changed linearly above
20.54 mGy/sec. It is thought that the generated current was the@10 V
charges originated from the ionized residual gas inside thechamber, and that it did not reach the saturated region under thebiased voltage. The CNT thin-film electrodes on the PEN sheet
Fig.3 Dose rate dependence
is applicable to the real-time transparent detector.
of the generated current.
This work was supported partially by the joint usage/research program of the Institute of Materials andSystems for Sustainability (IMaSS), Nagoya University.
[1] S. Ishii et al. Physica E. 86, 297 (2017).
Corresponding Author: S. Ishii
Tel: +81-49-296-1926, Fax: +81-49-296-2915,
E-mail: s.ishii@mail.dendai.ac.jp- 63 -

1P-18Controlled synthesis of graphene nanoribbons from fluctuation-induced
nanobarʊNaofumi Sato1, Toshiro Kaneko1, Toshiaki Kato1,2
1

Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2
JST-PRESTO

In recent years, graphene nanoribbon (GNR), strips of two-dimensional (2D) graphene into onedimensional (1D) structure gather intense attentions because of their superior electrical features.
Although GNR can be made in a variety of ways, the reliable site and alignment control of GNR withhigh on/off current ratios remains a challenge.
Until now, we have developed a novel method based on the advanced plasma CVD with nanoscale
Ni catalyst (Ni nanobar) for directly fabricating suspended GNR devices (Fig. 1(a) and (b)) [1, 2].
Further adjustments in the GNR structures such as the width, length and layer number can open up
the application field of this novel material.
From our previous research, it can be conjectured
that the locally-formed narrow part within the GNR
may be the critical origin of high on/off current ratios.
Such local structures can be formed by the PlateauRayleigh (P–R) instability during plasma CVD [2]. To
improve the structure controllability of GNRs,
controlling the P-R instability, especially initiation Fig. 1. (a) Schematic illustration of suspended
position of instability within nanoscale material, is GNR device. (b) Typical scanning electron
one of the important subjects. Based on this microscope (SEM) image of suspended GNRgrown by our plasma CVD. Scale bar in (b) shows
background, we have developed a new approach 100 nm.
introducing “fluctuation structures” within the initial
Ni nanobar (Fig. 2). This structure includes circles andstraight parts within single Ni nanobar. We expectedthat the straight (= narrower) part of Ni nanobar might
be as a trigger for initiating P-R instability.
Based on this idea, we performed a GNR growthwith changing the number of circles in the Ni nanobar.
As a result, it was found that averaged on/off current
ratios within the multiple GNR devices can be
improved by adjusting the number of circles in the Fig. 2. Schematic illustration and SEM image ofinitial Ni nanobar, which can be explained by the fluctuation structure of Ni nanobar and GNR.
balance between circle to circle distance and Scale bar in SEM image shows 100 nm.
wavelength of P-R instability.
[1] T. Kato and R. Hatakeyama, Nature Nanotechnology, 7, 651-656 (2012).
[2] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa, T. Kato, Nature Communications, 7, 11797-1-10 (2016).
Corresponding Author: N. Sato
Tel: +8122-795-7046, Fax: +8122-263-9225,
E-mail: naofumi.sato.s2@dc.tohoku.ac.jp- 64 -

1P-19Fabrication of large Ni grain on sapphire substrate
for graphene growthżAsato Nakashima1, Tatsuya Kashio1, Tomoaki Murahashi1, Tukasa Soga1,
Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
Multilayer graphene (MLG) is a promising alternative to metal conductors inelectrical conduction. Ni (111) is often used as a catalyst of graphene growth because it has alarge carbon solubility befitting for the growth of multilayer graphene. Conventionally, Ni isused in a polycrystalline shape, which results in a poor quality of the grown MLG. On theother hand, in the case of single-crystalline Ni, superior MLG is expected to be grown with its
orientation aligned to that of the catalyst. However, a single-crystalline Ni substrate isdifficult to obtain and, moreover, very expensive.
We have been trying to crystallize Ni film with the aid of the crystal information ofsapphire substrate. However, the Ni grains are not easy to be enlarged only by annealing.
Therefore, in this study, we use an epitaxial Ni (111) layer grown on a sapphire substrate to
crystalize the Ni layer deposited over it.
A 100 nm-thick Ni (111) layer was epitaxially grown on a c-plane sapphire substrateby MBE at a substrate temperature of 700 oC. In addition, 300 nm-thick Ni layer was
deposited on the layer using electron beam deposition. Then, the sample was annealed at 1000o
C for 30 min to crystallize the whole Ni layer. The samples were investigated using
Nomarski differential interference contrast microscopy (N-DICM) and X-ray diffraction(XRD) measurement.
Figure 1 shows (a) N-DICM image of the sample surface and (b) XRD in-plane
spectrum of Ni (200) diffraction. From Fig. 1(a), it was found that a large Ni grain of about 5
mm×3 mm in size was obtained. The in-plane Ni (111) spectrum in Fig. 1(b) shows that its
crystal orientation was well aligned to that of the sapphire substrate although it still contained
twins. This can be attributed to the amorphous like Ni layer deposited by the electron beam
deposition was successfully crystalized by the crystal information of the MBE grown Ni
buffer layer during the subsequent annealing. At the time of the presentation, the graphene
growth on the Ni layer will also be reported.

Fig.1 (a) N-IDCM image of Ni (111) layer after annealing and (b) XRD in-plane spectra.
Corresponding Author㸸A. Nakashima Tel: +81 90 9924 2059, E mail 193428014@ccalumni.meijo-u.ac.jp- 65 -

1P-20The Instructive Aspect of Moire-Patten Analysis of Rotation Less Than 0.5degree on Twisted Bilayer Graphene by Tool for Computer Imaging
żYuhei Natsume1, Tohei Moritani 2
1

International Education Center (IEC), Chiba University, Chiba 260-0033, Japan
2
Yokohama Physics Circle, Japan

Recently, much attention has been paid to the relationship between moire-pattern and thesuperlattice structure in twisted bilayer graphene has been investigated from the viewpoint ofappearance for flat bands originated from Dirac K-points in the single layer[1-3].
In these circumstances, we propose moire-pattern analysis by the use of tool for computer
imaging from the viewpoint of the instruction. The typical example is shown in Fig.1, where
the twisted angle ȟis 0.3r. In this case, the super-lattice constant is 191a. (Here, a=0.246nm
is the is graphene’s lattice constant.)

Fig.1 ȟ=0.3r
r

Though there remains much problem as to the electronic properties in a quite large unit cell
where the number of containing atoms is more than 100,000, the tool of computer imaging isquite powerful and instructive for the findings of super lattices. This tool should be used as thestimulating introduction to solid state electronics.
[1] R.Bistritzer and A.H. MacDonald, Proc. Natl. Acad. Sci. U.S.A. 108, 12233 (2011).
[2] C.Berger, X. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A.N. Marchenkov, E.H.
Conrad, P.N. First and W.A. de Heer, Science 312, 1191 (2006).
[3] M. Koshino et al., Phys Rev. X 8, 031087 (2018).

- 66 -

1P-21
Raman optothermal methods to measure interfacial thermal conductance of
low-dimensional materials
żQin-Yi Li1,2, Koji Takahashi1,21Department of Aeronautics and Astronautics, Kyushu University, Fukuoka 819-0395, Japan
2
International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu
University, Japan

Measurement and tuning of interfacial thermal conductance (ITC) between individual lowdimensional materials are of fundamental significance for a variety of applications including
thermal management and thermoelectric energy conversion. However, the existing methods formeasuring ITC at the nanoscale are extremely limited. Here, we present Raman based
techniques to measure the ITC between 1D materials and layered 2D sheets. First, a totally noncontact transient Raman mapping method is developed to measure the ITC between individual
1D materials [1]. Focused laser is used to heat the sample and the laser absorptivity isexperimentally determined by a transient Raman technique. The laser heating positions arechanged along two connected 1D materials, and the change of temperature rise with varying
positions is in-situ measured from the temperature dependent Raman band shifts. Further, aMEMS sensor is combined with Raman thermometry to improve the measurement accuracy of
ITC between 1D materials. Second, a variable-spot-size transient Raman method is proposed
to measure the ITC between atomic thin 2D layers in heterostructures [2]. Both pulsed andcontinuous-wave laser beams are used to heat the 2D heterostructure, and the temperature ofeach layer is detected from their distinct Raman shifts. By changing the laser spot sizes andpulse widths, both the in-plane thermal conductivity and ITC between every two layers can be
simultaneously extracted from the multiple temperature curves.

Fig. 1 Transient Raman mapping method Fig. 2 Variable-spot-size transient Raman
to measure interfacial thermal
method to measure interfacial thermal
conductance between 1D materials [1]conductance between 2D layers [2][1] Q.Y. Li et al., Carbon, 141, 9298 (2019).
[2] Q.Y. Li et al., Int. J. Heat Mass Transf., 125, 12301239 (2018).
Corresponding Author: Q.Y. Li
Tel: +81-92-802-3016
E-mail: qinyi.li@aero.kyushu-u.ac.jp- 67 -

1P-22Non-diffusive molecular transport in graphene liquid cells
Sota Hirokawa1, Hideaki Teshima1,2, Pablo Solis Fernandez3, Hiroki Ago3, Yoko Tomo4, Qin-Yi Li1,2, Koji Takahashi 1,2
1

Department of Aeronautics and Astronautics, Kyushu University, 744 Motooka, Nishi-ku,
Fukuoka 819-0395, Japan
2
International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu
University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan3
Global Innovation Center, Kyushu University, 6-1 Kasuga-koen, Kasuga-city, Fukuoka
816-8580, Japan
4
Department of Mechanical Engineering, Kyushu University, 744 Motooka, Nishi-ku,
Fukuoka 819-0395, Japan
Graphene liquid cells (GLCs) allows highest possible spatial resolution for liquid phasetransmission electron microscopy (TEM)[1][2]. Here, we studied the nanoscale dynamics ofbubbles induced by controllable damage of GLCs. The occurrence of graphene damage was
ruled by electron dose rate depended on an acceleration voltage and a type of electron gun.
Interestingly, during the observation of water pockets encapsulating no-bubbles, we neverfound the damage of GLC even with highest electron dose rate TEM. This fact indicates thatelectron beam induced damage in graphene depends on not only the electron dose rate but
also whether there is bubbles in the GLC. After the graphene was damaged, air leakage caused
dynamic behavior of bubbles, and we observed the unexpected the unexpected directional
nucleation of new bubbles. This phenomenon is beyond the explanation of conventional
diffusion theory. We attributed this to the effect of nanoscale confinement.
[1][2]

J. M. Yuk et al., Science, 336, 61–64, (2012).
D. Shin et al., Nat. Commun., 6, 1–6, (2015).

Corresponding Author: K. Takahashi
Tel: +81-92-802-3015
E-mail: takahashi@aero.kyushu-u.ac.jp

Fig.1. TEM images of dynamic bubble behavior and nucleation, andschematics of gas molecules transport in the GLC. White dash lines
show outline of bubbles.

- 68 -

1P-23Layer-selective dopant implantation in van der Waals heterostructuresżHiroto Ogura1, Yuya Murai2, Toshifumi Irisawa3, Zheng Liu4, Hiroshi Shimizu1,
Hong En Lim1, Yusuke Nakanishi1, Takahiko Endo1, Ryo Kitaura2, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan.
3
Nanoelectronics Research Institute, AIST, Tsukuba, 305-8562, Japan
4
Innovative Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted muchattention because of their unique physical properties and future device applications. To
control their electronic properties, dopant implantation in TMDCs provides an effective
way. For example, it is known that p-type doping can be achieved by Nb substitution for
Mo or W atoms due to the formation of acceptor levels [1, 2]. However, the element
substitution in channel layer has generally several issues such as reduced carrier mobility
due to increased carrier scattering, and uncontrollable impurity levels. To address theseissues, we focus our attention on the separation of impurity-doped layer and channel layer
in van der Waals (vdW) heterostructures.
In this study, we have investigated the effect of Nb atomic beam irradiation in TMDCbased vdW heterobilayers. The heterobilayers such as MoS2/WS2 were prepared bychemical vapor deposition [3]. These samples were irradiated with atomic beams of Nb
and Se at 500°C in ultrahigh vacuum (Fig.1a) [4]. As shown in Fig.1b, the Raman peaksof WS2 around 350 and 420 cm-1 are reduced after the irradiation. In contrast, there isalmost no change in the Raman peaks of MoS2 for 380~410 cm-1 after the same treatment.
Similar tendency is also observed for PL spectra of these samples. These results suggestthat the effect of Nb irradiation is suppressed for bottom MoS2 monolayer by the presenceof top WS2 monolayer in WS2/MoS2. In other words, the present process canpreferentially implant the impurity atoms in the upper layer in vdW heterostructures,
which could provide a promising way to realize controlled carrier doping of various 2D
materials.

Figure 1 (a) Schematic illustration of Nb atomic beam irradiation for WS2/MoS2 heterobilayer. (b) Raman
spectra of pristine and Nb-irradiated WS2/MoS2 heterobilayers.
[1] J. Suh et al., Nano Lett, 14, 6976 (2014). [2] L.-P. Feng et al., Nanoscale, 8, 6507 (2016).
[3] K. Kojima et al., Nanoscale, 11 12798 (2019). [4] Y. Murai et al., in preparation.
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp- 69 -

1P-24
Hydrogen adsorption effects on the electronic properties of TaS2
żYasushi Ishiguro1, Naoko Kodama2, Kirill Bogdanov3, Alexander Baranov3,
Kazuyuki Takai1,21

Dept. of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan
Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
3
St. Petersburg National Research University of Information Technologies, Mechanics andOptics, Saint Petersburg 197101, Russia
2

Tantalum disulfide (TaS2) is a typical two-dimensional (2D) material that exhibits a charge
density wave (CDW) phase transitions [1,2]. Recently, it has been reported that the transition
temperatures and the electronic properties behave differently from those in bulk crystals when
the dimensionality (number of layers) is modulated. In the case of 2D materials, it is known
that the interfacial interactions with the substrate or adsorbed molecules has a great influenceon the electronic properties of the 2D material. However, regarding TaS2, the effects of theinterfacial interactions on its electronic properties and the CDW phase transitions have not beenclarified. In our study, the hydrogen adsorption effect in the Nearly-Commensurate (NC) CDW
and Incommensurate (IC) CDW phases of exfoliated TaS2 thin film, was investigated in termsof the change of electrical conductivity.
The TaS2 thin films were prepared by mechanical exfoliation of bulk crystals of TaS2 grownby the chemical transport synthesis on a SiO2 (285 nm) / Si substrate. A FET device for the
conductivity measurement were fabricated by EB-lithography process. Electrical conductivity
measurements were conducted in a vacuum chamber equipped with a temperature-controlled
stage and H2 gas line. The partial pressure of H2 and the device temperature were controlled
throughout the measurements.
Figure 1 shows time dependence of electrical resistivity of TaS2 thin film in the ICCDW
phase (up to 500 K), where H2 gas is intermittently introduced. The vertical axis represents theratio of the change of the resistance ǻR = (R – R0) / R0 (%), where R0 and R are the resistanceat t = 0 under vacuum, and the resistance at each time. When H2 gas is introduced, the electricalresistance R decreases, and recovers after evacuation of the H2 gas. The ratio of change ǻR
increases as the pressure of introduced H2 gas increases. The response times when hydrogengas is introduced and when the gas isevacuated are obviously different. The
response time for introduction of thegas takes more than 20 minutes, while
the response time for the evacuation
takes less than 5 minutes. The ISD - VSD
characteristics before and after
introduction of H2 gas maintain thelinear characteristics and show nochange in the slope, indicating ohmic
contact between electrodes and the thinfilms maintains after H2 adsorptions.
[1] Y. Yu et al., Nat. Nanotechnol., 10, 270 (2015)[2] I. Lutsyk et al., Phys. Rev. B., 98, 195425 (2018)

Fig. 1. The ratio of the change of the resistivity for
different H2 gas pressures- 70 -

1P-25
6LPSOHIRUPXODRIHQKDQFHPHQWRIWKHHOHFWULFILHOGLQVLGHDKROORZPHWDOOLFF\OLQGHU
6LPSOHIRUPXODRIHQKDQFHPHQWRIWKHHOHFWULFILHOGLQVLGHDKROORZPHWDOOLFF\OLQGHU˕<XDQ7LDQ06KRXILH8NKWDU\5LLFKLUR6DLWR'HSDUWPHQWRI3K\VLFV7RKRNX8QLYHUVLW\6HQGDL-DSDQ  +ROORZ PHWDOOLF F\OLQGHU ZLWK GLHOHFWULF FRUH ILJ  LV D JRRG PRGHO LQ

UHSUHVHQWLQJWKHFKDUDFWHURIWLSVXVHGLQWLSHQKDQFHPHQW5DPDQVSHFWURVFRS\7(56  >@ )XUWKHU SKRWRYROWDLF GHYLFHV LQVLGH WKH PHWDOOLF KROORZ FRUH LV
V\QWKHVL]HGIRUHQKDQFLQJWKHSKRWRHOHFWULFHIILFLHQF\>@)RUVXFKDSSOLFDWLRQWKH
HQKDQFHPHQWRIHOHFWULFILHOGLQVLGHWKHF\OLQGHUVKRXOGEHRSWLPL]HG('HYDX[HWDOVKRZHGWKDWWKHHOHFWULFILHOGLVHQKDQFHGEHFDXVHWKHVXUIDFHSODVPRQ 63 
LVH[FLWHG>@$OWKRXJKWKHH[LVWHQFHRI63LQWKHF\OLQGHUDQGLWVUHODWLRQZLWKWKH
HQKDQFHPHQW DUH DOUHDG\ VWXGLHG GHVLJQLQJ WKH F\OLQGHU ZKLFK JLYHV D ODUJHHQKDQFHPHQW LV VWLOO QRW HDV\ EHFDXVH WKH 63 LV H[FLWHG UHVRQDQWO\ LQ ZKLFKUHVRQDQWFRQGLWLRQLVQRWJLYHQDQDO\WLFDOO\DQGGHSHQGVRQWKHJHRPHWU\RIWKH
F\OLQGHU,IWKHHQKDQFHPHQWRIHOHFWULFILHOGLVJLYHQDVDIXQFWLRQRIWKHJHRPHWU\DQGWKHIUHTXHQF\RIWKHOLJKWZHFRXOGGHVLJQWKHKROORZF\OLQGHUZKLFKJLYHV
WKHODUJHVWHQKDQFHPHQWIRUDJLYHQIUHTXHQF\RIOLJKWZKLFKLVRXWPRWLYDWLRQ   ,Q WKLV ZRUN ZH FDOFXODWH WKHHQKDQFHPHQWRIWKHHOHFWULFILHOGLQVLGH
WKHKROORZFRUHDVIXQFWLRQRIJHRPHWU\SDUDPHWHUVDQGWKHIUHTXHQF\7KHQZH
ILWWKHHQKDQFHPHQWWRDVLPSOHIRUPXOD
IRUWKHSUHYLRXVSXUSRVH   ,Q)LJZHSORWWKHHQKDQFHPHQWRI
WKHHOHFWULFILHOGLQVLGHWKHKROORZFRUH )LJ7KHKROORZPHWDOOLFF\OLQGHUZLWKDQ
DV D IXQFWLRQ RI WKH IUHTXHQF\ 7KH LQQHUUDGLXV ܽଵ DQGDWKLFNQHVV ݀
HQKDQFHPHQW SORW FDQ EH ILWWHG WR D
/RUHQW]LDQ IXQFWLRQ RI IUHTXHQF\ 7KHSDUDPHWHUV RI WKH /RUHQW]LDQ VXFK DV
WKHSHDNIUHTXHQF\DQGWKHSHDNYDOXH
LVIXUWKHUILWWHGE\JHRPHWU\SDUDPHWHUVܽଵ  DQG ݀  :H WKXV REWDLQ D VLPSOHIRUPXODRIHQKDQFHPHQWDVIXQFWLRQRI
WKH OLJKW IUHTXHQF\ DQG WKH JHRPHWU\SDUDPHWHUV ܽଵ ǡ ݀  ZKLFK LV XVHIXO IRUILQGLQJ WKH RSWLPL]HG JHRPHWU\ RI
)LJ  7KH HQKDQFHPHQW DV D IXQFWLRQ RI
F\OLQGHU WR JLYH WKH ODUJHVW
WKH IUHTXHQF\ IRU VHUYDO ܽଵ Ǥ ݀  'RWHQKDQFHPHQWUHSUHVHQWV WKH FDOFXODWHG UHVXOW DQG WKH
VROLG OLQH UHSUHVHQWV WKH ILWWHG IXQFWLRQ
9HUWLFDOOLQHVUHSUHVHQWWKHSHDNIUHTXHQF\  5HIHUHQFH>@$OH[DQGHU60[OHRGHWDO3K\V5HY%  >@-RVHSK'&KULVWHVHQHWDO1DQR/HWW  >@86FKURHWHU('HYDX[HWDO3K\V5HY%  - 71 -

1P-26
Tellurization of solution-synthesized tungsten oxide nanowiresżMai Nagano, Yohei Yomogida, Yasumitsu Miyata, and Kazuhiro Yanagi*
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Transition-metal dichalcogenide nanotubes have cylindrical structures of rolled MX sheets(MX, M = W, X = S, Se, Te) with unique physical properties. The physical properties of these
inorganic nanotubes exhibit various properties depending on constituent elements. Among
various compositions, tellurides such as WTe2 attract a lot of interest because of their uniquesemi-metallic properties. However, synthesis of semi-metallic nanotubes such as WTe2
nanotubes has not been achieved yet, although various semiconducting nanotubes such as WS2,
MoS2 and WSe2 have been synthesized. One of approaches to synthesize such WS2 (WSe2)
nanotubes is the sulfurization (selenization) of tungsten oxide nanowires [1,2]. Thus, in thisstudy, we investigated whether WTe2 nanotubes could be obtained by tellurization of thetungsten oxide nanowires.
The tungstain oxide nanowires obtained by solvothermal synthesis were reacted with Te for
30 min in Ar and H2 flow. Te is known to less reactive than S and Se. Thus, here we introduced
NaOH as catalyst to promote tellurization, where NaOH produce highly reactive Na2Te by thereaction with Te [3]. We varied amount of NaOH and temperature of tellurization.
Fig. 1 shows Raman spectra of samples synthesized with various amount of NaOH. In thesample produced with 2 ȝmol of NaOH, we could observe the Raman peaks of WTe2,
suggesting the success of tellurization. On the other hand, without NaOH or with larger amountof NaOH, we cannot observe the Raman peaks of
WTe2. These results indicate that the controlled
amount of NaOH significantly influences thetellurization. However, we found that the produced
samples were not nanotubes but nanowires
according to the TEM measurements on thesamples.
References:[1] Y. Yomogida et al, Appl. Phys. Express 12, 085001 (2019)[2] Y. Yomogida et al, Appl. Phys. Lett 116, 203106 (2020)[3] S. Yun et al, Nature Communications 8:2163 (2017)
Corresponding to Kazuhiro Yanagi

Fig 1: Raman spectra of samples after
tellurization on WOx nanowires withe-mail: yanagi-kazuhiro@tmu.ac.jp

different amount of NaOH

- 72 -

1P-27- 73 -

2P-1
Photoluminescence property changes of locally functionalized single-walledcarbon nanotubes using structural differences of proximal modifiersżHaruka Aoki1, Naoki Tanaka1,2, Tsuyohiko Fujigaya1,2,3, Tomohiro Shiraki1,2
1Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
2 WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
Center for Molecular Systems, Kyushu Univ, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) with semiconducting features show
photoluminescence (PL) in the near infrared regions (900-1600 nm), which is applicable tobioimaging probes and telecom devices. The PL properties of SWNTs are determined by thephotogenerated exciton that is a bound state of an electron and a hole by Coulombic interactions.
Recently, local chemical functionalization of SWNTs have been reported for sp3 carbon defectdoping to the crystalline sp2 carbon lattice to produce locally functionalized SWNTs (lfSWNTs). [1-3] The lf-SWNTs emit redshifted and brighter E11* PL than E11 PL, which is due
to trapping and localization of the diffusive excitons at the defect doped sites having narrower
bandgaps. We have reported proximal modification of SWNTs using bis-aryldiazonium salts(bADs) [2]. The synthesized lf-SWNTs (lf-SWNT-bA) showed largely redshifted PL (E112*)
than E11* PL over 100 nm. In addition, there is a strong correlation between the E112* PLwavelength shifts and the chemical structures of bADs, which was observed by changing their
methylene spacer lengths and connected positions on the aryl groups [3]. Therefore, proximal
modification would provide unique techniques for PL property modulation of the lf-SWNTs.
In this study, we newly synthesize lf-SWNTs using multi points-aryldiazonium salts (mADs)
that could allow proximal multipoint modification and investigate the effects of proximal
modification structures on the PL properties of lf-SWNTs.
The SWNTs (CoMoCAT, (6,5) chirality-rich) were solubilized in D2O containing sodium
dodecyl sulfate by sonication. After ultracentrifugation, the supernatant was collected as a
SWNT solution. The synthesized mAD was mixed with the SWNT solution for local chemicalfunctionalization to produce lf-SWNTs-mA. In the PL spectrum of lf-SWNTs-mA, PL peaks
were observed over 1200 nm wavelength regions. In vis/NIR absorption and Raman scattering
measurements, absorbance at 980 nm decreased and the intensity of D-band that related to thedefect introduction increased, respectively. These results show that the local chemicalfunctionalization of SWNTs occurs by the reaction with mAD. In addition, we found that thereaction conditions such as solution concentrations significantly influenced such longer
wavelength PL generation. The details regarding the chemical structure effects of the modifiers
and the reaction condition dependency will be discussed at the symposium.
[1] Y. Wang et al., Nat. Chem, 5, 840 (2013).
[2] T. Shiraki et al., Sci. Rep, 6, 28393 (2016).
[3] T. Shiraki et al., Chem. Lett, 48, 791 (2019).
Corresponding Author: T. Shiraki
Tel: +81-092-802-2841, Fax: +81-092-802-2840,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: shiraki.tomohiro.992@m.kyushu-u.ac.jp- 74 -

2P-2
Temperature dependence of Seebeck coefficients in Semiconductingand Metallic Single-Wall Carbon Nanotube film.
żAkari Yoshida, Yota Ichinose, Kengo Fukuhara,
Kan Ueji, Yohei Yomogida and Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192- 0397, Japan

Temperature dependence of Seebeck coefficient is a very important parameter tounderstand carrier transport mechanisms. According to the Mott’s equation, in a variable
range hopping (VRH) conduction, both the conductivity and Seebeck coefficient decreaseas the decrease of temperature. Semiconducting single-walled carbon nanotube(SWCNT) thin films usually exhibit VRH conduction, so both the absolute value of theSeebeck coefficient and the conductivity usually decrease as the decrease of temperature.
However, recent theoretical calculations suggested that when the chemical potential islocated inside the semiconducting band gap of the van hove singularities, the Seebeckcoefficient exhibits an opposite temperature dependence such as the increase of theSeebeck coefficient as the decrease of temperature.[1] Therefore, in order to understandthe background of the thermoelectric properties of hopping conduction systems, weinvestigate the temperature dependence of Seebeck coefficients of semiconducting andmetallic SWCNTs with controlled carrier injection by electrolyte gating approaches.
We employed our home-build thermoelectric measurement setups on the thin films ofsemiconducting and metallic SWCNT with a diameter of 1.4 nm. Here we used ionic gels
as gate-electrolyte. The amount of injected carriers into the sample was controlled by theshift of the gate voltage (VG) and the temperature dependence of the Seebeck coefficientat various VG was investigated.
Figure 1 shows the temperature dependence of the Seebeck coefficient ofsemiconducting SWCNT thin films with a series of VG. When the Fermi level is locatedin the band (VG = +0.8 V: ‫ی‬, +1.5 V: Ÿ), the Seebeck coefficient decreases as thedecrease of temperature. This is the conventional behavior of the hopping conduction
system. Remarkably, when the Fermi level islocated in the energy gap (VG = +0.3 V:ź and+0.4 V:Ŷ), the Seebeck coefficient increased
as the decrease of temperature. In the case of
metallic SWCNTs, we always observed thedecrease of Seebeck coefficients at any VG.
Increase of Seebeck coefficient was only
observed when the Fermi-level was properly
tuned in semiconducting SWCNT thin films.
[1] Yamamoto&Fukuyama, JPSJ 87, 114710 (2018)
Corresponding Author: K. Yanagi
E-mail: yanagi-kazuhiro@tmu.ac.jp- 75 -

Fig. 1 Temperature dependence of Seebeckcoefficient in semiconducting SWCNTs thinfilms.

2P-3
Effects of pyrene derivatives on photoluminescence properties ofsingle-walled carbon nanotubesżBoda Yu1, Tsuyohiko Fujigaya1,2,3, Tomohiro Shiraki1,2
1Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
Center for Molecular Systems (CMS), Kyushu University, Fukuoka 819-0395, Japan

PL Intensity / a. u.

Semiconducting single-walled carbon nanotubes (SWNTs) show near-infrared (NIR)
photoluminescence (PL) and are expected as promising materials for optical applications
including bioimaging and telecommunication devices. Their PL properties are known to be
influenced by surrounding materials such as solvent and surfactant
molecules, which is recognized as microenvironmental effects [1]. In
particular, aromatic molecules could strongly interact with SWNT surface
by S-S interactions and, therefore, be used as a motif of dispersants for
SWNTs in aqueous media [2]. Recently, we have reported strong
interactions of such aromatic molecules with the SWNTs that were locallyfunctionalized by defect doping through chemical functionalization with
Fig. 1. Chemical
aryldiazonium salts (lf-SWNTs) [3]. This finding implies that aromatic structure ofmolecules could be employed for the modulation of PL properties of not compound 1.
only pristine SWNTs but also lf-SWNTs.
In this study, we investigate the effects of pyrene
Oex = 570 nm
2500
derivatives on the PL properties of pristine SWNTs or
Pristine SWNTs
lf-SWNTs by mixing these components. Firstly, we
SWNTs with compound 1
2000
synthesized a cationic pyrene derivative (compound 1:
Fig. 1) and mixed with solubilized SWNTs (CoMoCAT,
1500(6, 5) chirality-rich) in D2O using a surfactant. Fig. 2
shows PL spectra of pristine SWNTs and the mixture of
1000
SWNTs and compound 1. In both spectra, we observeda PL peak around 986 nm, which was ascribable to E11500
PL. The addition of compound 1 resulted in 12 nm
redshift and decreased intensity of the E11 PL. Such0
phenomena is similar to the result reported from Dai et
900
1000
1100
1200
1300
1400
al. [4] and could be considered due to interactions
Emission Wavelength / nm
between compound 1 and SWNTs providing dielectric
Fig. 2. PL spectra of pristine SWNTs(solid line) and the mixture of SWNTs
environmental changes. Details including the resultswith compound 1 (dashed line).
using lf-SWNTs will be discussed at the symposium.
[1] Y. Ohno et al., Phys. Stat. Sol. B 244, 4002 (2007).
[2] N. Nakashima et al.Chem. Lett. 25, 638 (2002).
[3] T. Shiraki et al. Chem. Commun. 55, 3662 (2019).
[4] S. M. Tabakman et al. J. Phys. Chem. C 114, 19569 (2010).
Corresponding Author: T. Shiraki
Tel: +81-092-802-2841, Fax: +81-092-802-2841,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: shiraki.tomohiro.992@m.kyushu-u.ac.jp- 76 -

2P-4


  !
    

#2,%(2#-*#-,-02)# )',-'/-)'%50)-2..',#,21)102-
&'%#-/25+ #./1+#,1-$#!&,'!*,%',##/',%!&--*-$,%',##/',%&#,'3#/0'15-$-)5 #./1+#,1-$ ..*'#"&50'!0 *1-,'3#/0'15!&--*-$!'#,!#
 ,01'121#0-$,,-31'-,$-/212/#-!'#15%-5,'3#/0'15
 ,#/%5,-,%',##/',% -/1-/51'-,*,01'121#-$ "3,!#","201/'*!'#,!# 
0,*1#/,1'3#1-1&#+#1*#*#!1/-"#00',%*#4**#"!/ -,,,-12 # 01&#1-.#*#!1/-"#&0 ##,/#.-/1#"1-!&'#3#&'%&01 '*'15',#/-30)'1#-*/ #**0 0-4',%1-1&#&5"/-.&- '!
,12/#-$!/ -,,"3-'"',%1&#'-,+'%/1'-,,""'1'-,'1"/01'!**5/#"2!#01&#$ /'!1'-,!-01
0'1!, ##0'*5"#.-0'1#"-,1-"#3'!#0 50'+.*#+#!&,'!*1/,0$#/#0.'1#02!&"3,1%#0
1&#/#/#1&/##$!1-/0*'+'1',%1&# -$1&# 1-.#*#!1/-"# 0#" 01&1,##"1- #""/#00#" 1&#2,$3-/ *#4-/)$2,!1'-,-$1&# 4'1&/#0.#!11-1&#!1'3#.#/-30)'1#*5#/*#"',%1-*-00',3-*1%#.-1#,1'**-4#/!-,"2!1'3'151&,1&#+#1*!-2,1#/./10*'+'1',%1&#$'**$!1-/
," *#00/#$/!1'3#,12/#4'1&/#0.#!11-',!'"#,1*'%&1*#"',%1-*-00',0&-/1!'/!2'1!2//#,1
#/# 4# ""/#00 1&-0# 1&/## '002#0 5 #,%',##/',% 1&#  1-. #*#!1/-"# # 12,#" 1&# 4-/)
$2,!1'-,-$ #*#!1/-"#0,"&-*#0#*#!1'3'15 5"#.-0'1',%-2,"#/3!22+4'1&-21"+%',%
2,"#/,#1& .#/-30)'1# *5#/0 0',% .&-1-#*#!1/-, 5'#*" 0.#!1/-0!-.5  0-/ ,!# ," /+,
0.#!1/-0!-.54#"#1#/+',#1&#,#!#00/5- 1&'!),#001-#$$'!'#,1*5"-.#1&# 1-.#*#!1/-"#
,"012"52,"#/*5',%"-.',%+#!&,'0+ #14##, 0,"-1-!&'#3#&'%&*5#$$'!'#,1 
1-.#*#!1/-"# 0#" 0

%"$# '$#!$"  #'$ ! #



!$"  '$  

#  '$ %"& &'$       - 77 -

# "
 ! #

2P-5
Monitoring of adsorption behavior of serum albumin onto the single-walledcarbon nanotube functionalized with fatty acidżKenta Nakamura1, Yoshiaki Niidome1, Yukiko Nagai1, Naoki Tanaka1, Tomohiro Shiraki1,2,
Takeshi Mori1,3, Yoshiki Katayama1,3,4, Tsuyohiko Fujigaya1,2,4
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2NER, Kyushu University, Fukuoka 819-0395, Japan
3
The Center for Future Chemistry, Kyushu University, Fukuoka 819-0395, Japan
4
CMS, Kyushu University, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWNTs) are
attracting increasing attentions in biologicalapplications because of their unique thermal, physicaland optical properties. To use SWNTs for in vivo
applications, SWNTs need to be biocompatible. Up todate, coating of SWNTs with biocompatible materials
especially polyethylene glycol (PEG) has been
investigated due to its stealth property [1]. However, it
was pointed that the PEG-modified materials are
rapidly excreted from the blood due to an immune
reaction when they are repeatedly administered, which
is known as accelerated blood clearance (ABC)phenomenon [2]. To avoid such a problem, serum Figure 1 Schematic illustration of this study.
albumin (SA) attracts recent attention as an alternative
material of PEG since SA is a blood protein derived from a living body. However, since theadsorption coefficient of SA onto SWNT surface is lower than that of the other proteins [3], theincrease of the adsorption to avoid the risk of the replacement might be necessary. Therefore,
in this study, we introduced fatty acid onto the surface of SWNTs to improve the binding of SA
by utilizing the strong binding between SA and fatty acid, where the introduction of the fatty
acid was carried out by the radical grafting of the fatty acid derivative onto the SWNT sidewall.
Here, the adsorption behavior was monitored by monitoring of the unique red-shifted andbrighter photoemission (PL) compared to that of the non-functionalized SWNTs [4]. As theresult, binding constant of SA onto fatty acid-site was 7.00 × 103, while that of SA onto the nonmodified surface was 3.29 × 103. Since the control experiment carried out using phenylmodified SWNTs showed binding constant of SA onto phenyl-site was 6.53 × 102, recognitionof SA onto fatty acid was clarified.
[1] J. M. Harris et al., Nat. Rev. Drug Discovery, 2003, 2, 214.
[2] Dams, E. T. et al., J. Pharmacol. Exp. Ther. 2000, 292, 1071.
[3] Ge, C. et al., Proc. Natl. Acad. Sci. U. S. A. 2011, 108, 16968.
[4] Wang, Y. et al., Nat. Chem. 2013, 5, 840.
Corresponding Author: T. Fujigaya
Tel/Fax: +81-92-802-2842
Web: http://www.chem. kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 78 -

2P-6
N-type doping from sulfhydryl groups of proteins to semiconducting
single-wall carbon nanotube- 79 -

2P-7
Time-resolved photoluminescence spectroscopy of
epitaxial monolayer and bilayer graphene on SiCżKensuke Saito1, Jianfeng Bao2, Wataru Norimatsu2, Michiko Kusunoki3,
Hideo Kishida1, Takeshi Koyama1
1

Department of Applied Physics, Nagoya University, Japan
Department of Chemical Systems Engineering, Nagoya University, Japan
3
Institute of Materials and Systems for Sustainability, Nagoya University, Japan
2

Graphene has various optical properties as two-dimensional material, and a study onlight emission devices based on graphene has been conducted [1]. The emission band of adevice can be tuned by using interference between thermal radiation of graphene and reflected
light from substrate [2]. The emission intensity of thermal radiation increases as emitter
temperature. Therefore, it is important to understand the cooling processes of graphene forapplication of thermal radiation.
An early study on time-resolved photoluminescence (PL) spectroscopy of transferredand epitaxial monolayer graphene indicated that the long distance between graphene andsubstrate reduces heat flow rate to the substrate [3]. Because slow heat flow leads to strong
steady-state PL, it is preferred to use graphene with weak coupling to the substrate for lightemission devices. The distance of the upper layer of bilayer graphene and the substrate islonger than that of monolayer graphene. It is expected that bilayer graphene has weakercoupling to the substrate. In this study, we compared PL from monolayer and bilayer graphene
to investigate the coupling of the graphene to the substrate.
The epitaxial monolayer and bilayer graphene were prepared by thermal
decomposition of 4H-SiC. The time-resolved PL measurements were conducted based on thefrequency up-conversion method. The excitation photon energy and pulse duration were 1.55
eV and 90 fs, respectively. Figure 1 shows PL decay curves of the monolayer and bilayer
graphene samples at a photon energy of 0.6 eV. The PL decay of bilayer graphene is slowerthan that of monolayer graphene, suggesting slower heat flow to the substrate in the bilayer
graphene sample. We also obtained time-resolved PL spectra of the monolayer and bilayer
graphene samples to investigate electron temperatures in the two samples. Comparison of the
decay behavior and the intensity between the two
samples and three-temperature model calculation
enable us to estimate the strength of interaction
between the graphene and the substrate.
[1] Y. Miyoshi et al., Nat. Commun. 9, 1279 (2018).
[2] Y. D. Kim et al., Nat. Nanotechnol. 10, 676 (2015).
[3] H. Imaeda et al., J. Phys. Chem. C 122, 19273 (2018).
Corresponding Author: T. Koyama
Tel: +81-52-789-4450, Fax: +81-52-789-4450,
E-mail: koyama@nuap.nagoya-u.ac.jp

Fig.1

Photoluminescence

decay

of

epitaxial monolayer and bilayer grapheneon SiC at a photon energy of 0.6 eV.

- 80 -

2P-8
A controllable post doping method for TMD atomic layersżYuya Murai1, Shoji Yoshida2, Zheng Liu3, Toshifumi Irisawa4, Hiroshi Shimizu5,
Takahiko Endo5, Yasumitsu Miyata5, Ryo Kitaura1
1

2

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba 205-8573, Japan
3
Innovative Functional Materials Research Institute, AIST, Nagoya 463-8560, Japan
4
Nanoelectronics Research Institute, AIST, Tsukuba 305-8560, Japan
5
Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan

The purpose of this study is to develop a method for accurate doping of atomic layers,
especially transition metal dichalcogenide (TMD) atomic layers. Control of p-type and n-type
by introducing dopants is one of the essential techniques in semiconductor-device applications.
In the case of silicon, the ion implantation technique has been widely used as a controllable
doping method. It is, however, challenging to apply the ion implantation method to TMD atomic
layers, which are ultrathin semiconductors with a sub-nanometer thickness; the high-energy ion
beam significantly damages TMD atomic layers. In this work, we have focused on low-kineticenergy atomic beam irradiation as a highly controllable doping method applicable to TMD
atomic layers.
Figure 1 shows a HAADF-STEM image of a Nb-doped single-layer WSe2. In HAADF-STEM
images, image contrasts are proportional to the nth power of the atomic number (Z-contrast
imaging). As shown in Fig. 1, W atoms are, therefore, imaged as bright spots, whereas Se atoms
give image contrasts much weaker than those of W atoms. As you can see from Fig. 2, some of
the W-sites are imaged as dark spots, which correspond to substituted Nb atoms; we confirmed
the existence of Nb atoms by the elemental analysis based on EDX. Figure 3 shows transfer
characteristics of a WSe2 FET device before (the blue curve) and after (the red curve) a doping
process. Although the transfer curve clearly shows ambipolar characteristic before the doping,
the Nb-doped WSe2 FET clearly shows the p-type characteristic with on current of 10-7 A. At
the presentation, we will also discuss more detailed device characteristics and spectroscopic
results.

Figure 1 A HAADF-STEM
image of Nb-doped WSe2

Figure 2 An enlarged imageof the area indicated by
the red box in Figure 1

Corresponding Author: R. Kitaura
Tel: +81-52-789-2482, Fax: +81-52-747-6442
Web: http://nano.chem.nagoya-u.ac.jp/
E-mail: r.kitaura@nagoya-u.jp- 81 -

Figure 3 Transfer characteristics
of pristine and Nb-doped
WSe2 devices

2P-9
Superconducting properties in three-dimensional networks of NbSe2 filmsżTogo Takahashi1, Chisato Ando2, Mitsufumi Saito3, Yasumitsu Miyata2,
Yusuke Nakanishi2, Jiang Pu1, Taishi Takenobu1
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan3
Department of Electrical Engineering, Tokyo Metropolitan University, Tokyo 192-0397, Japan
1

2

Increasing upper critical field, Hc2, in the superconductors is one of the most significant
requirements for the superconducting device applications. In this regard, emerging twodimensional (2D) noncentrosymmetric NbSe2 is a promising candidate because their pairbreaking is protected by the spin-momentum (spin-valley) locking effect, resulting in giant inplane Hc2 (~ 50 T) [1,2]. However, the strong anisotropy of 2D NbSe2 suppress the robustnessof out-of-plane Hc2 (< 5 T) [2,3]. Although NbSe2 offers a possible robust superconductor, thisgreat anisotropy restricts the potential utility for future practical device designs. To overcome
this issue, here, we propose synthetic approach to produce superconducting NbSe2 film withnearly isotropic large Hc2. The scalable and thickness controlled chemical vapor deposition isdeveloped to tailor 3D superconducting networks, in which 2D NbSe2 flakes are verticallyaligned to the substrates [4]. We investigate the relations between 3D structured films and theirsuperconducting properties through by X-ray diffraction and magneto-transport measurements.
The direct selenization methods were introduced to synthesize large-area NbSe2 films, andtheir morphologies can be tuned by just a two-step vapor-phase reaction of the initial thicknessof evaporated Nb layers (Fig. 1a). The
spectroscopic characterizations revealed the 3D
structured films comprising of vertically stacked
2D flakes with random orientations, as shown in
the SEM image of Fig. 1b. Using these samples,
the angle-resolved magneto-transports realized
the enhanced Hc2 of 20 – 38 T for all directionsof external magnetic fields. Figure 1c shows thecomparison of the angle-dependent Hc2 between
our 3D structured films and reported 2D films[3], indicating that nearly isotropic large Hc2 wasobserved in our samples. On the basis of X-ray
diffraction measurements, the isotropic nature of
Hc2 is attributed to the averaging intrinsic
anisotropy of 2D NbSe2 flakes due to their 3D
superconducting networks. Thus, the proposedsynthetic approach provides a significant
method to functionalize 2D superconducting
materials for creating practical superconductorsthat can operate under high magnetic fields.
[1] X. Xi et al., Nat. Phys., 12, 139 (2016).
[2] H. Lin et al., Nat. Mater., 18, 602 (2019).
[3] H. Matsuoka et al., Phys. Rev. Research, 2, 012064 (2020). Fig. 1. (a,b) Growth of 3D structured NbSe2
films (a) and their SEM image (b). (c) The[4] T. Takahashi et al., submitted (2020).
compassion of Hc2 between 3D and 2D films [3].
Corresponding Author: J. Pu, T. Takenobu
E-mail: jiang.pu@ngoya-u.jp, takenobu@nagoya-u.jp, Tel/Fax: +81-52-789-5165- 82 -

2P-10
Crystallinity dependence on mechanical properties of aerographite particles
YUEXUAN LI 1, Hiromu Hamasaki1, Kaori Hirahara1
1Dept.of Mechanical Engineering, Osaka University, 565-0871, Japan

Aerographite is an ultralight and highly-flexible carbon material [1]. The three-dimensional
morphology can be controlled by choosing the template of zinc oxide (ZnO). Recently, hollow
microparticles of aerographite with urchin-like shell structures have been synthesized byusing ZnO nanorod-microsphere [2, 3]. This urchin-like microparticles exhibit a uniqueflexibility deserving to mention. Each particle can remain its original shape after large
compression more than 73%, even when the shell was partially broken [2]. However, It wasalso indicated that the graphitic walls comprising the as-grown particles are defective, andimprovement of the crystallinity may make the aerographite particles exhibit much excellent
mechanical properties [2]. In this study, we studied on the relationship between mechanicalproperties and crystallinity of the aerographite particles by single-particle-level compressive
tests in a scanning electron microscope (SEM). The particles used in this study were annealed
at 800–2000°C in argon atmosphere for controlling the crystallinity. The crystallinity wasevaluated by electron diffraction and transmission electron microscope images. A single
particle was made compression between two parallel cantilevered probes in SEM, and thestress-strain curve of each sample was obtained. As the results, all particles performed a linear
elastic behavior under 30% strain. The young’s modulus of the particles annealed at 2000°C is
3 times higher than samples annealed at 1600°C and as-grown samples, probably related tothe higher crystallinity. However, the critical point tend to be lower.
This work was supported by JSPS KAKENHI Grant Number 19K21920.
(b)

(a)澳

Fig. 1. SEM images of an aerographite particle (a) before compression, (b) during the compression test (70%strain)[1]澳M. Mecklenburg, A. Schuchardt, Y. K. Mishra, et al. Advanced materials, 24(26),3486 (2012) .
[2]澳K. Hirahara, K. Hiraishi, K. Imadate, et al. Carbon, 118, 607-614(2017).
[3] Y. Hirota, M. Syafiq Elias, B. Dwijaya, et al. Chem. Letters., 43, 360-362(2014).

- 83 -

2P-11High-density CNT forest by multiple coating of iron oxide nano-colloid fordry-spinnable CNT forestżKento Tabata, Takayuki Nakano, Yoku Inoue
Department of Electronics and Materials Science, Shizuoka Univ., Hamamatsu 432-8561, Japan
In the conventional research on CNT forest synthesis, the catalyst thin film has been deposited on the substrateby, for example, sputtering. However, in the sputtering method, since the diameter of catalyst nanoparticle can becontrolled only by the thickness of the catalyst film, the diameter and density of CNT cannot be controlled
separately. In this study, we prepared a CNT forest by using catalyst nano-colloid. The diameter of catalyst
nanoparticle was controlled by parameters of a polyol method, and density was increased by multiply coating thenano-colloid on a substrate.
Catalyst nano-colloid was synthesized by a polyol method using iron acetyl acetylate as a precursor. By tuning1

the temperature ramping rate, the diameter of the nanoparticle wascontrolled. The diameter of iron oxide nanoparticles used was 3.05 nm. Al2O3

0.2 0.4 0.6 0.8
(m)

3.85

was deposited on a thermally oxidized Si substrate by sputtering first. Then,iron oxide nanoparticles were spin-coated. The substrate coated with the iron0oxide nanoparticles was annealed in the air. The number of catalyst
nanoparticles was increased by repeating the nanoparticle deposition process.

0

0.2 0.4 0.6 0.8(m)

A mixed solution of hexane and toluene was used as a solvent, and theconcentration of the iron oxide nanoparticle solution was set to 0.5 mg/ml.
The spin coating was performed at 1000 rpm for 30 seconds. The heat0 (nm)

1

Fig.1 AFM image of iron oxide
nanoparticles on substrate.

treatment was performed in the air at 400° C for 3 hours. CNT synthesis was
carried out by thermal chemical vapor deposition using acetylene as a carbon
source, hydrogen as a reducing agent for catalyst particles, and argon as acarrier gas.

200 mFigure 1 shows the atomic force micrography(AFM) image of nanoparticles
on the substrate. Figure 2 shows the scanning electron microscophy(SEM)
image of the CNT forest. A CNT web is drawn from the forest. Figure 3

Fig.2 SEM image of CNT
forest.

shows the relationship between mass density and the number of spin
coating of the colloid. We found that two-times spin-coating increased themass density of the CNT forest. Further deposition of nanoparticles
induced a decrease in mass density resulted from the aggregation ofAs
depo

nanoparticles.

Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356
Web: http://cnt.eng.shizuoka.ac.jp/
E-mail: inoue.yoku@shizuoka.ac.jp

Fig.3 the relationship between
mass density and the number ofannealing.

- 84 -

2P-12
Activation of Alkane for CVD Growth of Single-Wall Carbon
NanotubesżPengfei Chen1, Mengju Yang1, Rei Nakagawa1, Hisashi Sugime1, Hitoshi Mazaki2,
Suguru Noda1,3,*
1Department of Applied Chemistry, School of Advanced Science and Engineering,
Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
2
Central Technical Research Laboratory, JXTG Nippon Oil & Energy Corporation, 8
Chidori-cho, Naka-ku, Yokohama, Kanagawa 231-0815, Japan
3
Waseda Research Institute for Science and Engineering, Waseda University, 3-4-1
Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
Nowadays C2H2 is one of the commonly used carbon sources for the growth of singlewall carbon nanotubes (SWCNTs) due to its high activity [1]. However, the large-area
synthesis of SWCNTs is still a problem because the C2H2 supply at high concentrations
easily causes the catalyst deactivation [2]. We proposed the control of gas-phase reactions
by combining two carbon sources of C2H2 and C2H4, which yielded SWCNTs at an
improved areal yield [3]. In this study, instead of using the alkyne or alkene, weinvestigated less reactive alkane as the carbon source. Compared to the C2H2, n-hexane(n-C6H14) can be a better candidate because of the lower price and easier storage in liquidstate濁澳 We studied the gas-phase reactions by gas chromatography (GC) and gas-phasekinetic simulation (CHEMKIN) to determine the factors that influence the SWCNT
growth. We first checked the CNT synthesis using the combinatorial catalyst (0.2-5 nm
Fe on 15 nm AlOx) [2] and found that SWCNTs grow from thin Fe layer when n-C6H14(2 vol%) is fed with H2 at relatively high concentrations (20-40澳vol%) (Fig. 1a). Then we
examined the large-area synthesis of SWCNTs using the 18 substrates (1×1 cm2) with 0.7
nm Fe, and found that SWCNTs was produced at a higher average yield of 1.8 mg cm-2
from n-C6H14 (Fig. 1b) than from C2H2 (1.4 mg cm-2). The analysis of the gas-phase
species showed that C2H2 forms from n-C6H14 at a concentration similar to the optimum
C2H2 concentration (0.3 vol%) in our previous works [2,3]. n-C6H14 is an effective carbon
source that yields C2H2 in situ for the large-area synthesis of SWCNTs.

Fig. 1: (a) Side-view images of the CNT forests grown from 2 vol% n-C6H14 with different H2concentrations on Fe (gradient)/AlOx/Si. (b) Areal mass of the SWCNTs grown with 20 vol% H2 and 0.7
nm Fe. CVD was carried out at 800 °C for 30 min.
[1] H. Sugime and S. Noda, Carbon 50, 2953 (2012). [2] K. Hasegawa and S. Noda, ACS Nano 5, 975(2011). [3] T. Sato et al., Carbon 136, 143 (2018).
Corresponding Author: S. Noda, Tel: +81-3-5286-2769, E-mail: noda@waseda.jp- 85 -

2P-13Growth mechanism of one-dimensional heterostructures
ӑYongjia Zheng1, Yang Qian1, Ming Liu1, Akihito Kumamoto1, Yuichi Ikuhara1, Esko I.
Kauppinen2, Shohei Chiashi1, Taiki Inoue1, Rong Xiang1, Shigeo Maruyama1
1

2

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Department of Applied Physics, Aalto University, Otakaari 1, 02150 Espoo, FI-20742, Finland

In recent years researchers have focused on two-dimensional van der Waals (vdW)
heterostructures, which have generated great interests recently due to the possibility of combining
diverse atomic layers to create novel materials and devices [1-2]. In this work, we demonstrate a
new one-dimensional structure with similar heterostructure interfaces that includes single-walledcarbon nanotubes (SWCNTs), boron nitride nanotubes (BNNTs) and molybdenum disulfide (MoS2)
nanotubes. Techniques involving direct growth of 1D vdW heterostructures by chemical vapor
deposition (CVD) will be presented in detail. Binary heterostructures in SWCNT-BNNT and
SWCNT-MoS2 order can be achieved with the aid of SWCNTs as a template, and ternary
heterostructure in SWCNT-BNNT-MoS2 was further demonstrated [3]. In addition, formation
mechanism of 1D vdW heterostructures will be discussed with the open-end-chiral growth, theeffect of isolation, and three kinds of growth models (Fig. a-g). The high quality of 1D
heterostructure allows for further experimental exploration of its properties. We believe there is agreat prospect for these new structures as they extended the concept of vdW heterostructures to 1D
materials.

Fig. 1: (a) Atomic model of open-end growth mechanism. (b) Atomic 3D model for three cases refers
to open-end chiral growth. (c) TEM image as an example for case 2, in which BNNT growth starts
from both ends. (d) Atomic model of a BN coated bundle consisting of two SWCNTs, and its crosssection view. (e) TEM image for this bundle situation. (f) Atomic model of a BN coated bundle
SWCNT on a flat substrate as the second situation. (g) Specimen based on the second situation madeby a focused-ion-beam (FIB) system for TEM characterization.

[1] D. Jariwala et al., Nature materials, 16, 170 (2017).
[2] Z. Liu et al., Nature Nanotechnology, 8, 119 (2013).
[3] R. Xiang et al., Science, 367, 537 (2020).

Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421,
Fax: +81-3-5841-6983,
E-mail: maruyama@photon.t.u -tokyo.ac.jp- 86 -

2P-14
Imaging of functional group distribution on carbon nanomaterials
with highly spatially resolved SEM-EDSżHideaki Nakajima, Takahiro Morimoto, Ying Zhou,
Kazufumi Kobashi, Takeo Yamada, and Toshiya Okazaki
1

National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565,
Japan

Functionalization is a key technique for improving the dispersibility of carbon nanomaterials
such as single-walled carbon nanotubes (SWCNTs) in solvents. Therefore, a robust and efficientcharacterization method is required to confirm spatial uniformity of their surfacefunctionalization. Energy dispersive X-ray spectrometry (EDS) in scanning electron
microscopy (SEM) is particularly suitable for evaluating the elemental distribution relating tofunctional groups on various nanomaterials with wide scanning area [1]. However, its low
analytical sensitivity to light elements (i.e. C and O) limits the spatial resolution to around 1
Pm, which hinders the spatial information on nanomaterial surfaces. Here, we demonstrate ahighly spatially resolved SEM-EDS elemental imaging for carbon nanomaterials. Highly
sensitive X-ray detection and drift-free EDS operation enable us to image light elements witha sufficient spatial resolution of < 10 nm. The technique clearly reveals the spatial distributionof surface functionalization on chemically reacted SWCNT bundle structures [2].
Figure 1(a) shows a schematic of SEM-EDS measurement setup. EDS equips annular typefour-channel detectors, and thus light elements can be detected sensitively. Furthermore, due tothe electrical contact between metal and CNT, the imaging drift during electron-beamirradiation is suppressed to within 10 nm. SWCNT sample was synthesized by water-assisted
chemical vapor deposition and was chemically modified with KMnO4/H2SO4 treatment.
Figure 1(b) indicates a typical EDS result. The
SWCNT bundle structures are clearly reproduced by
the C element mapping. In addition, the usage of anitride substrate significantly suppresses the
background of oxygen species that come from thesubstrate. Therefore, our approach can provide an
accurate functional group distribution of a variety ofcarbon nanomaterials. The detailed analysis about thedegree of functionalization and the spatial resolutionof EDS imaging will be discussed in the symposium.
Acknowledgments: This work was supported by aproject (JPNP16010) commissioned by the New
Energy and Industrial Technology Development Figure 1. Highly spatially resolved SEMOrganization (NEDO).
EDS measurements. (a) Schematic[1] J. Ji et al., Chem. Sci. 2, 484 (2011). [2] H. Nakajima et al.,Nanoscale 11, 21487 (2019).
Corresponding Author: Toshiya Okazaki
Tel: +81-29-861-4173 / E-mail: toshi.okazaki@aist.go.jp- 87 -

diagram of measurement setup and (b)elemental images of C and O of SWCNT
sample.

2P-15)RRW3UHVVXUH6HQVRU6\VWHP0DGHIURP0:&17&RDWHG&RWWRQ)LEHUVWR
0RQLWRU+XPDQ$FWLYLWLHVDQG6SRUWV3HUIRUPDQFH
0G$EGXO0RPLQ D0RKDPPDG-HOOXU5DKPDQE7HWVX0LHQRD
a

Graduate School of Science & Technology, Shizuoka University, Shizuoka 422-8529, Japan
Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000,
Bangladesh+LJKO\VHQVLWLYHSUHVVXUHVHQVRUVKDYHEHHQGHYHORSHGIURPPXOWLZDOOFDUERQQDQRWXEH
0:&17  FRDWHG FRWWRQ ILEHUV WR XWLOL]H WKHP LQ PRQLWRULQJ RI KXPDQ DFWLYLWLHV DQG VSRUWLQJSHUIRUPDQFHV>@7KHVHQVLQJPHFKDQLVPRIWKHSUHVVXUHVHQVRULVGLVFXVVHGWKURXJKH[SHULPHQWDODQGWKHRUHWLFDOH[SODQDWLRQV7KHSULQFLSOHRIWKHVHQVLQJPHFKDQLVPLVUHODWHGZLWKWKHQXPEHU
RI FRQWDFWV DPRQJ WKH 0:&17 FRDWHG ILEHUV FRQWDFW DUHD DPRQJ WKH ILEHUV ZKHQ D IRUFH LV
DSSOLHGDQGWKHWXQQHOLQJFXUUHQWDPRQJWKH0:&17VFRDWHGRQWKHFRWWRQILEHUV8VLQJWKHWKUHH
VHQVRUVDIRRWSUHVVXUHVHQVRUV\VWHPKDVEHHQGHYHORSHGZKLFKFDQGHWHFWWKHH[HUWHGIRUFHRIKXPDQIRRWGXULQJVWDQGLQJZDONLQJUXQQLQJMXPSLQJDQGRWKHUDFWLYLWLHV>@7KHORFXVRI
WKHFHQWHURIJUDYLW\LVDOVRPHDVXUHGE\WKHVHVHQVRUVGXULQJWKHVHKXPDQDFWLYLWLHV7KHH[HUWHG
IRUFHLQFUHDVHVLQVWDQWDQHRXVO\ZKHQDSHUVRQMXPSVIURPDQXSSHUVWHSRIDODGGHURQWRDIORRUZKLFKLVFOHDUO\UHFRUGHG7KHYDULDWLRQVRIIRUFHGXULQJNLFNLQJDIRRWEDOODQGEDVNHWEDOOVFRULQJDUHUHFRUGHG7KHIRRWSUHVVXUHVHQVRUVFDQEHXVHGWRPRQLWRUWKHUHDOWLPHVSRUWLQJSHUIRUPDQFHV
7RSUHYHQWWKHDQNOHDQGNQHHLQMXU\RIVSRUWVPHQDQGWRPRQLWRUWKHDFWLYLWLHVRIWKHSDWLHQWVDQG
ROGSHUVRQVWKHIRRWSUHVVXUHVHQVRUVFDQEHXWLOL]HG
b

D

E

)LJ  $ FRPSUHVVLRQ )LJ D 7LPHYDULDWLRQVRIIRUFHVRQWKHIRRWSUHVVXUHVHQVRUV ULJKWIRRW PRGHO RI WKH VHQVRU ZLWK GXULQJNLFNLQJDIRRWEDOOE\DOHIWIRRW E 7LPHYDULDWLRQRIIRUFHVRQWKH
DQH[WHUQDOIRUFH D F  IRRWSUHVVXUHVHQVRUVGXULQJEDVNHWEDOOVFRULQJ
E  F  F!  DQG F  F F! F
>@0RPLQ0$5DKPDQ0-0LHQR7-1DQRPDWHUϮϬϭϵ͕,'
>@0RPLQ0$5DKPDQ0-0LHQR76XUI&RDW7HFKϯϵϰ͕,'
&RUUHVSRQGLQJDXWKRU0G$EGXO0RPLQ(PDLOPDPRPLQEG#JPDLOFRP0RELOH

- 88 -

2P-16
Improvement of carbon nanotube filament formation efficiency by gas
discharge breakdown using triode electrode configurationżHiro Hayama, Soichiro Magata, Hideki Sato
Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

We have demonstrated that carbon nanotube (CNT) filaments, thin thread-like assemblies
comprising many CNTs, can be efficiently formed by irradiating gas discharge breakdown to
CNT mat attached to a planar electrode [1]. This method may be used as a simple method for
CNT spinning. However, the efficiency of the CNT filament formation was low, andimprovement of the filament formation efficiency was required. We recently found that CNT
filaments were efficiently formed by using a collection electrode, which was additionally placed
above the discharge electrodes (anode and cathode) [2]. In addition, it was confirmed that theshape of the collection electrode influences the formation efficiency of the CNT filaments. In
this study, we examined the effect of the shape of the collection electrode on the CNT filaments
formation by the gas discharge breakdown using triode electrode configuration.
The mat-shaped CNT sheet was attached on a stainless-steel plate by pressing and used as acathode. A tungsten wire (0.15 mm diam.) was used as an anode, which was placed horizontallyto the cathode. The distance between them was 1.0 mm. The square-shaped collection electrode(a stainless-steel plate, 0.5 mm thick.) was vertically positioned above the anode wire. The
distance between the cathode and the collection electrode was 2.0 mm [Fig. 1(a)]. Theseelectrodes were introduced to a discharge chamber that was filled with Ar gas at 6.2 kPa. DC
voltage (-800 V) was applied to the cathode for ignition of the gas discharge breakdown.
A bias voltage of +150 V was applied to the collection(a)(b)
Collection
electrode and a gas discharge was generated between
electrode
anode and cathode. The discharge breakdown generated
CNT
filaments
dust-like CNT bundles, and they formed long filaments
Gas discharge
around the electrodes [Fig. 1(b)]. After that, the collection
breakdown
Anodeelectrode was gradually moved upward from the discharge
Cathodearea, floating CNT filaments adhered to the collection
electrode [Fig. 1(c)]. This accompanied elongation of the
CNT filaments on the collection electrode and aggregated
CNT filaments(d)near the corner of the stainless-steel plate [Fig. 1(d)]. The (c)length of the CNT filament bundle formed at this time wasabout 1.5 cm. This result shows that the plate-shaped
collection electrode is effective for formation of longer
CNT filaments. It is considered that the CNT filaments
Bundled CNT
were formed by efficient formation of the dust-like CNT
filaments
bundles by the irradiation gas discharge breakdown to the
CNT mat and the reconstruction of the CNT bundles to theFig.1 Photographs of (a) electrodes before
filaments by an effect of the electrostatic induction.
ignition of gas discharge breakdown, (b)This study was supported by JSPS KAKENHI Grant No. 19K05206.
[1] H. Sato et al., Appl. Phys. Lett., 110, 033101 (2017).
[2] S. Hiromura et al., The 57th FNTG General Symposium, 2P-21 (2019).
Corresponding Author: H. SatoE-mail: sato@elec.mie-u.ac.jp- 89 -

breakdown accompanied by the CNT
filament formation, (c) elongation of CNT
filaments and (d) formation of bundled CNT
filaments by moving the collection
electrode upward. Scale bars are 2.0 mm.

2P-17
Quantitative study of sheet thermal conductance of Single-Walled carbon
nanotube film
ӑPengyingkai Wang1, Yongjia Zheng1, Taiki Inoue1, Rong Xiang1, Shohei Chiashi1, Watanabe
Makoto1, Shigeo Maruyama1, 2

1 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
Single-walled carbon nanotube (SWNTs) film exhibits promising potential as thermal interface
material due to the superior thermal conductivity [1]. However, tube density, bundle length, bundle
diameter and junction conductance have great impacts on the thermal transport property of SWCNT
film. SWCNT-BNNT heterostructure film has been studied and shown an enhanced sheet thermal
conductance [2]. To deeply understand the mechanism of thermal transport in heterostructure film, it’s
essential to propose a proper model.
SWCNT films are consist of SWCNT bundles with various size. In this work, we put forward a new
way in modeling the thermal transport in SWCNT film based on a quantitative model of SWCNT bundle.
The bundle length, area contact conductance and bundle diameter have been studied as variables andthe corresponding sheet thermal conductance of SWCNT film is discussed. With the statistic distributionof bundle size in 87% transparent SWCNT film, a modified random stick network (RSN) model with
only parameter of line density and path conductance is established [3]. Finally, sheet thermal
conductance is plotted as a function of film transparency according to the model, which fits well withthe experimental result.
The non-monotonic increase of bundle conductance with bundle size and length, diameter, contact
conductance dependent sheet thermal conductance is presented. Based on the understanding of SWCNT
film, thermal transport mechanism of SWCNT-BNNT heterostructure film is further discussed.

Fig.1 (a) Thermal resistance of RSN model. (b) Fitting line (blue) and experimental result (red triangle).
[1] J Hone et al., Appl.Phys.Lett, 7
77
7, 666 (2000)[2] P.Wang et al, ACS Nano, 1
14
4,4298 (2020)[3] M. Tsukuda et al., Appl. Phys. Express,112
1
2 (2019)
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5841-6421,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 90 -

2P-18In-situ X-ray diffraction monitor of multi-layer graphene
precipitated from nanodiamondsżTatsuya Kashio1, Asato Nakashima1, Yuki Ueda1, Takahiro Maruyama2, and Shigeya Naritsuka1
1

Department of Materials Science and Engineering, Meijo University
Nagoya 468-8502, Japan2
Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan

Precipitation method is one of the useful ways of graphene growth where graphene is
obtained by simple processes; deposition of catalytic and carbon materials, and subsequentheating. We have succeeded in a direct growth of multilayer graphene on various substrates
by the precipitation method using nanodiamond [1]. In order to improve the graphene quality,
it is necessary to reveal the growth mechanism. Therefore, in this study, in-situ observation ofgraphene precipitation was carried out using a high intensity X-ray beam from thesynchrotron radiation facility of SPring-8.
Firstly, 100nm-thick Ni layer was deposited on c-plane sapphire using MBE, andnanodiamond was coated on the surface. The sample was heated in ultra-high vacuum
chamber, which was installed on a manipulator for X-ray diffraction measurement. The
temperature was incrementally increased from 600Υ to 700Υ by the steps of 50Υ with theannealing periods of 30 min. At the same time, the peak intensity of the graphite (002)diffraction was insitu monitored to investigate the behavior of the graphene precipitation. The
temperature was cooled at a rate of 100°C/min after the annealing. The Ni catalytic layer wasetched off using nitric acid to directly characterize the precipitated graphene by Raman
scattering spectroscopy.
Figure 1a shows a typical Raman spectrum of the precipitated graphene. The
intensity difference of the G and G' peaks indicates that multilayer graphene was soundly
precipitated. Fig.1b shows the intensity change of the diffraction peak of graphite (200)
during the sample annealing. Areas (I), (II), and (III) correspond to (I) 600oC, (II) 650oC, and(Ϫ) 700oC annealings for 30 min. The change rates of the diffraction intensity indicate thatthe growth rate of graphene monotonously increased with increasing the temperature, whichsuggests the temperature change of the diffusion constant of the carbons thorough the Ni
catalytic layer.
(b)(a)

Fig.1 (a) Raman spectrum of grown sample (b) intensity dependence of graphite (002) diffraction.
[1] T. Kashio et al., The 57th FNTG Symposium 1P-26.
Acknowledgement: This work was supported by the QST Advanced Characterization Nanotechnology Platform(A-19-QS-0028). The X-ray diffraction measurements were performed at BL11XU, SPring-8 with the approvalof JASRI (No.2019B3587). Corresponding Author: T. Kashio E-mail: 193428007@ccmailg.meijo-u.ac.jp- 91 -

2P-19Non-destructive, Uniform, and Continuous
Electrochemical Functionalization of Graphite SheetżYuta Nishina,1,2 Benoît D. L. Campéon,1 Masato Komoda1
1

Graduate School of Natural Science and Technology, Okayama University, 3-1-1
Tsushimanaka, kita-ku, Okayama, 700-8530, Japan.
2
Research Core for Interdisciplinary Sciences, Okayama University, 3-1-1 Tsushimanaka,kita-ku, Okayama, 700-8530, Japan.
To exploit superior properties of graphene in specific applications, it is necessary to improve
its production methods (top-down approach or bottom-up approach) and the modulation of its
structure (atom doping, covalent functionalization, or non-covalent functionalization). Current
methods to prepare graphene possess several disadvantages in terms of scalability, cost,homogeneity, and structural controllability. These drawbacks have restricted the mass
production and practical uses of graphene. Recently, the electrochemical method has become
attractive for producing and functionalizing graphene as an easy, fast, safe, scalable, and green
procedure.1–3
The electrochemical functionalization of graphite to graphene oxide was developed by using
HBF4 as an electrolyte.4 The non-destructive nature of the intercalated species (BF4-) results inthe expansion of graphite while preventing the exfoliation and formation of un-oxidizedgraphite domain before functionalization. HBF4 aqueous electrolyte and that diluted bymethanol produced materials with similar morphology and oxygen content. Introduction of themethoxy functional group allowed to be dispersed in organic solvents, thus extending its
processability. Additionally, promising results
were obtained in using the graphene oxides byelectrochemical methods for energy storage
and water filtration, thus guaranteeing theirwide scope of application. Finally, this process
was adapted to a flow system to enable
continuous production. This research willcontribute to allowing the fine-tuning of thefunctional groups, functionalization degree,and large-scale production of 2D carbons in
the future.
[1] K. Parvez et al., J. Am. Chem. Soc. 136, 6083
Fig. 1 Electrochemically produced graphene oxides.
(2014).
[2] Y. L. Zhong et al., J. Am. Chem. Soc. 134, 17896 (2012).
[3] S. Pei et al., Nature Commun. 9, 145 (2018).
[4] B. D. L. Campeon, M. Akada, M. S. Ahmad, Y. Nishikawa, K. Gotoh, Y. Nishina, Carbon 158, 356 (2020).
Corresponding Author: Y. Nishina
Tel: +81-86-251-8718, Fax: +81-86-25-8718,
Web: http://www.tt.vbl.okayama-u.ac.jp/publication.html
E-mail: nisina-y@cc.okayama-u.ac.jp
If the format of this page is broken, Select Printing Layout in “Display” tab.

- 92 -

2P-20Resolution of the phonon scattering by transient phonon spectra ofgraphene in molecular dynamics calculationsżTatiana Zolotoukhina1, Shohei Hokazono 1
1

Department of Mechanical Engineering, University of Toyama, Toyama 930-8555, JapanThe study of plasmons in 2D monolayer atomic crystals reveals the production of
hybridized plasmon-phonon modes. On the lifetime of the existence of coupledplasmon-phonon modes, the propagation of phonons within a few ps can be considered as
guided by the interaction process [1-3]. In order to resolve the coupling of electronic
excitation with phonons, one has to be able to distinguish dynamic changes such as 3-phonon
processes. The phonon dispersion relation in thermal energy transfer is regarded primarily
as an equilibrium process. However, the phonon dynamics is dependent on temperature in 2D
materials as it is shown in Raman spectroscopic measurements [4]. The dynamics of thephonon scattering influences thermal conductivity at ps time intervals by transient changes in
the phonon mode population that we aim to trace and qualitatively assess in the framework of
the classical equation of motion. We use an approach where transient calculations inmolecular dynamics (MD) method estimate variation in the transient density of states (DOS)of the graphene samples at selected sets of the sampling regions through which the transientphonon modes move. The mode propagation changes energy distribution between phononmodes in the graphene sample. The MD method with REBO potential for graphene
nanoribbon that was thermally excited in a small area at one end has been tested. The energy
distribution between basic and transient phonon modes in the 1st Brillouin zone in īM
direction is calculated. We test mode resolution and probable energy exchange between modes
at the transient time that proves the presence of the phonon scattering in the ps time scale.
(b)ns=25, area shifted by 100 %(a)ns=1, initial sampling area㻌㼚㼟㻩㻝㻢㻜㻜㻜㻜㻜㻜

㻌㼚㼟㻩㻞㻡
㻢㻜㻜㻜㻜㻜㻜

㼀㻩㻡㻷㼤㻌㼐㼕㼞㼑㼏㼠㼕㼛㼚㻡㻜㻜㻜㻜㻜㻜

㼀㻩㻡㻷㼤㻌㼐㼕㼞㼑㼏㼠㼕㼛㼚㻡㻜㻜㻜㻜㻜㻜

㻡㻝㻚㻤㻤㻠㻜㻜㻜㻜㻜㻜

㻰㻻㻿㻌㻔㼍㼞㼎㻚㻌㼡㻚㻕㻰㻻㻿㻌㻔㼍㼞㼎㻚㻌㼡㻚㻕

㻡㻝㻚㻤㻤

㻝㻤㻚㻟㻝

㻟㻜㻜㻜㻜㻜㻜

㻠㻜㻜㻜㻜㻜㻜

㻝㻤㻚㻟㻝㻟㻜㻜㻜㻜㻜㻜

㻞㻜㻜㻜㻜㻜㻜

㻞㻜㻜㻜㻜㻜㻜

㻝㻜㻜㻜㻜㻜㻜

㻝㻜㻜㻜㻜㻜㻜

㻜

㻜
㻜

㻝㻜

㻞㻜

㻟㻜

㻠㻜

㻡㻜

㻢㻜

㻣㻜

㻤㻜

㻥㻜

㻜

㻝㻜㻜

㻝㻜

㻞㻜

㻟㻜

㻠㻜

㻡㻜

㻢㻜

㻣㻜

㻤㻜

㻥㻜

㻝㻜㻜

㼒㻌㼇㼀㻴㼦㼉

㼒㻌㼇㼀㻴㼦㼉

Fig1 Density of states of graphene nanoribbon (T=5K, padding=4 for FFT transfer)[1] H. Tornatzky, R. Gillen, H Uchiyama, and J. Maultzsch, arXiv:1809.03381v1, (2018).
[2] A. KÕnacÕ䠈J. B. Haskins, C. Sevik, T. CagÕn, Phys. Rev. B 86, 115410 (2012).
[3] I. M. Felix & L. F. C. Pereira, Scientific Reports, 8, 2737, (2018).
[4] Z.-Y. Cao, X.-J. Cheng, App. Phys. Lett., 114(5):052102 (2019).
Corresponding Author: T. Zolotoukhina
Tel: +81-76-445-6739, Fax: +81-76-445-6739, E-mail: zolotu@eng.u-toyama.ac.jp- 93 -

2P-21
Raman spectroscopy of graphene oxide and reduced graphene oxide flakes
on Si-based substrates
żK. Kanishka H. De Silva1, Seiya Suzuki2, Pamarti Viswanath1, Masamichi Yohimura1
1

Graduate School of Engineering, Toyota Technological Institute, Nagoya 468-8511, Japan
International Center for Young Scientists (ICYS), National Institute for Materials Science(NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan2

The optical visibility of mono- and few-layer graphene oxide (GO) under optical
microscope (OM) is challenging even by using 300 nm SiO2/Si substrate, which is the current
standard for the visualization of pristine graphene. This is because of the large opticalband-gap caused by higher degree of oxidation and intercalated water [1,2]. However, theoptical contrast of GO can be improved by annealing GO on 300 nm SiO2/Si substrate. Apartfrom the optical visualization, the effect of the substrate on intrinsic properties of GO or
reduced graphene oxide (RGO) should be taken into consideration. Raman spectroscopy is aversatile tool to characterize structural, electronic, and optical properties of graphene-basedmaterials [3]. A strong dependence of the Raman spectroscopy of monolayer pristinegraphene on the thickness of the SiO2 layer has been reported [4]. Yet, an in depth report on
the effect of SiO2 thickness or the type of substrate on the Raman spectra of GO and RGO has
not been reported. In this work, we show the influence of the substrate on Raman spectral
properties (peak position, intensity, etc.) of GO and RGO mono- and few-layer flakes, which
is useful in interpreting the Raman spectra of these materials.
Individual GO flakes were obtained by spin coating an aqueous dispersion of GO on four
different substrates, Si and Si with a SiO2 thickness of 50, 90, and 300 nm. Two more sets of
GO were prepared. One set was annealed at 800 oC/30 min in Ar/H2 atmosphere (RGO) andthe other set was annealed in ethanol vapour environment (EtOH-RGO) to restore the latticedefects (as we reported previously [5]). Figure 1 shows the Raman spectra of GO, RGO, and
EtOH-RGO on different substrates. A dependence of the substrate on the Raman peakintensities and positions wereobserved. This has a strong
relationship to the multilayerinterference of light andmultilayer
reflectionofRaman signal. The study
gives a new insight tointerpret Raman spectra of
GO and RGO by considering
the underlying substrateproperties, in addition to the Figure 1: Raman spectra of (A) GO, (B) RGO, and (C)contribution for optical visibility. EtOH-RGO on different substrates.
[1] P. Blake and E. W. Hill, Appl. Phys. Lett., 91, 063124 (2007).
[2] X. Guo et al. Nanotechnology, 30, 295704 (2019).
[3] J.B. Wu et al. Chem. Soc. Rev., 47, 1822 (2018).
[4] D. Yoon et al., Phys. Rev. B, 80, 125422 (2009).
[5] K.K.H. De Silva et al., Jap. J. Appl. Phys., 57, 08NB03 (2018).
Corresponding Author: K.K.H. De Silva
Tel: +81-52-809-1852
E-mail: sd16501@toyota-ti.ac.jp- 94 -

2P-22Synthesis of Mo2C/C composite films as electrocatalyst for the hydrogen
evolution reaction by microwave-plasma CVD methodżShunsuke Numata1 and Hironori Ogata1,2
1Department of Chemical Science and Technology, Hosei University
2
Research Center for Micro-Nano Technology, Hosei University

Electrocatalytic water splitting is one of the suitable methods for hydrogen production.
However, this process relies on the electrocatalysis of the hydrogen evolution reaction (HER).
It is well known that Pt-based electrocatalysts show high current density at low overvoltages
and are efficient HER electrocatalysts. However, since they are rare and expensive, transition
metal carbide (TMC) such as molybdenum carbide has been proposed as an alternative to Pt,
and much research has been done so far. It has been reported that the penetration of carbon
atoms into the transition metal lattice increases the density of d-band electrons at the Fermi
level, leading to Pt-like properties. In addition, it has been reported that HER and conductivity
are improved by synthesizing TMC using nanocarbon materials [1].
In this study, we prepared Mo2C / C composite films by directly laminating a nanocarbon
materials on a molybdenum substrate by a microwave plasma chemical vapor deposition(MPCVD) method and investigated the possibility of application to a catalyst electrode for HER.
Fig. 1 shows the Mo 3d XPS spectrum of the fabricated material. It was found that a Mo2C/C
composite film was formed. Detailed experimental results will be reported at the meeting.

䖃㻹㼛㻞㻯
㻌䕦
䕦㻹㼛
䕔㻹
㻹㼛㻻㻞
䖩㻹㼛㻻㻟
㻌㻲
㻲㼕㼠㼠㼕㼚㼓
㻌㻹㻹㼑㼍㼟㼡㼞㼑㼙㼑㼚㼠

㻟㼐㻡㻛㻞

㻟㼐㻟㻛㻞

㻵㼚㼠㼑㼚㼟㼕㼠㼥

䕦

䕦

䖃

㻞㻞㻡

䕔
䖃

䕔
䖩

㻞㻟㻜

䖩

㻞㻟㻡

㻮㼕㼚㼐㼕㼚㼓㻌㻱㼚㼑㼞㼓㼥㻔㼑㼢㻕
Fig. 1 Mo 3d XPS spectrum of prepared material[1] Qiufang Gong et al., Nature Communication, 7, 2 (2016).
[2] Hongyang Zhao et al., Journal of Applied Physics, 123, 053301 (2018).
Corresponding Author: H. Ogata

E-mail: hogata@hosei.ac.jp- 95 -

㻞㻠㻜

2P-23Anomalous electroluminescencefrom WS2/WSe2 in-plane heterostructures
˕Naoki Wada1, Jiang Pu2, Tomoyuki Yamada2, Wenjin Zhang3, Zheng Liu4, Yusuke
Nakanishi1, Yutaka Maniwa1, Kazunari Matsuda3, Yuhei Miyauchi3, Taishi Takenobu2,
Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
3
Institute of Advanced Energy, Kyoto University, Uji, 611-0011, Japan
4
Inorganic Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
Heterostructures of transition metal dichalcogenides (TMDCs) are an attractive system
to realize high-performance devices such as light-emitting diodes and tunnel field-effecttransistors. To investigate their electronic properties and device performance, we havedeveloped growth processes of various in-plane heterostructures based on TMDC
monolayers. In our previous studies, we have demonstrated the electric double layer lightemitting diodes (EDLEDs) using these in-plane heterostructures [1-3]. In particular, werecently found that some samples show unique electroluminescence (EL) peaks, whichhave never been observed for photoluminescence spectra. However, the origin of theseEL peaks is still unknown. In this study, we have investigated the spatially-resolved EL
spectra of WS2/WSe2 in-plane heterostructures. The samples were grown by chemical
vapor deposition (Fig.1a), and then EDLEDs were fabricated (Fig.1b). The device shows
linear EL along the heterointerface by applying bias voltage (Fig. 1c). Interestingly,
multiple EL peak components can be observed at a specific position along the interface
as shown in Fig.1d. This suggests that the interface EL could be used to probe interfacederived electronic states and optical transitions. In this presentation, we will discuss about
the detail of voltage- and site-dependent EL properties.

Fig.1 (a) Illustration of growth model of WS2/WSe2in-plane heterostructures. (b) Optical and (c) EL imagesof WS2/WSe2-based EDLED device. (d) EL spectrum obtained at the interface.
[1] J. Pu et al., Adv. Mater. , 29, 1606918 (2017). [2] Y. Takaguchi et al., 56th FNTG symposium.
[3] N. Wada et al., 57th FNTG symposium.
Corresponding Author: Yasumitsu Miyata, Tel: 042-677-2508, E-mail: ymiyata@tmu.ac.jp- 96 -

2P-24
Effects of defect formation in monolayer MoS2
by low energy Ar+ ion beam irradiationżYangzhou Zhao1, Hiroki Yokota2, Haruna Ichikawa2, Yasushi Ishiguro2, Kazuyuki Takai1,2
1Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan
Dept. of Chemical Science and Technology, Hosei University, Tokyo 184-8584, Japan2

MoS2 is a kind of promising material in the application of electronic devices using twodimensional (2D) materials, but the structural defects of MoS2 always exist in either of samples
by CVD-grown or exfoliated from natural mineral. The presence of defects has a great influenceon the structure, and electronic properties of MoS2 having 2D nature. In this study, in view ofverifying the influence by defects on the structure and electronic properties, the monolayer
MoS2 is irradiated with low energy Ar+ ion beam in order to introduce defects under a wellcontrolled condition, and then evaluated by Raman spectroscopy, photoluminescence, andelectrical conductivity.
A field effect transistor using MoS2 obtained by exfoliation is fabricated on the SiO2 / Si
substrate. For defect-introduction, atomic vacancies are introduced into the surface of MoS2 by
low energy Ar+ beam irradiation at 100 eV accelerating voltage after annealing. After Ar+ ion
irradiation, both of the line widths of E2g and A1g peaks in Raman spectra increase and become
broad as the increase of irradiation time. The observed increase of the line width is consideredmainly because of the increase of the contribution of satellite peaks caused by the introductionof defects [1]. Interestingly, the effect of the irradiation is more significant for E2g in spite of its
less sensitivity to charge transfer by molecular adsorption, where A1g peak is much moresensitive due to the larger electron-phonon coupling [2].
As for photoluminescence (PL), after Ar+ ion irradiation, with the increase of irradiation
time, the intensity of the peak at 1.84 to 1.88 eV decreases significantly with the emerging of atail at the lower energy side. Interestingly, thepeak around 1.35 eV assigned to the emission
related to impurity levels also rapidly decreases
upon ion beam irradiation.
The electrical conductivity measurements
indicate that the shift of threshold voltage for
MoS2-FET “Vg shift” increases upon theirradiation time, suggesting the hole doping
formation during the Ar+ ion irradiation. Thismight be explained by charge transfer fromterminating oxygen atoms of defects originatingfrom the residue oxygen gas in the measurement
vacuum chamber.
[1] Soungmin Bae et al., Phys. Rev. App., 7, 024001(2017).
[2] B. Chakraborty et al., Phys. Rev. B, 85, 161403(2012).

Fig.1 Raman spectra for monolayer MoS 2
irradiated Ar+ ion beam for 0-4800 sec andbefore annealing

Corresponding Author: Kazuyuki Takai
E-mail: takai@hosei.ac.jp- 97 -

2P-25Synthesis of NbSe2 nanowires by selenization of niobium oxide nanowiresżRyoga Tanaka, Yohei Yomogida, Yasumitsu Miyata, Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
Transition-metal dichalcogenides (MX2, M = Mo, W,
Nb. X = S, Se) can form cylindrical structures of rolled
MX2 sheets, which show unique physical properties
different from 2D materials. Their physical properties are
expected to depend on constituent elements, butinvestigated elements so far have been limited. For
example, synthesis and transport properties ofsemiconducting nanotubes such as WS2 and WSe2 havebeen studied [1,2]. On the other hand, those of
superconducting nanotubes such as NbSe2 nanotubes,
20 nm
which are interesting because of their low dimensional
structures, have not been well investigated. These Fig. 1 TEM image of NbSe nanowires.
2
inorganic nanotubes are typically synthesized bychalcogenation of metal oxide nanowire precursor[1,2]. Thus, in this study, we applied
chalcogenation to synthesized niobium oxide
nanowires [3] and investigated whether niobiumoxide nanowires are converted to chalcogenide
cylindrical structures.
Niobium oxide nanowire precursors weresynthesized by annealing Nb foils in a low vacuum(400 Pa) while supplying a small amount of air.
Here we investigated the synthesis of niobiumoxide nanowires by changing growth temperature(800-1000ႏ) and amount of supplied air (0.2-1.6
sccm). Thereafter, the obtained nanowire precursor
was reacted with Se precursor for 30 min in 200
sccm Ar/H2 flow (with 2% H2).
The niobium oxide nanowires have a length of
10-50 ȝm and it is straightly grown from the surface of Fig. 2 Raman spectra of the selenized
foil. Fig.1 shows a typical TEM image of the selenized samples and Nb oxide nanowires.
sample. The structure of the selenized sample is similar
to that of the oxide sample. This suggests that conversion took place without significant changeof the structure. Considering Raman spectra shown in Fig.2, the selenized sample shows clear
peaks of NbSe2, which is different from those of Nb2O5. This result indicates that Nb2O5
nanowires are successfully converted to NbSe2 nanowires. Interestingly, the selenized sample
shows layered outer shells, suggesting the presence of rolled NbSe2 sheets. In the poster, we
will discuss specific content of synthesis and consideration of some conditions of synthesis.
[1] Y. Yomogida et al., Appl. Phys. Express 12, 085001 (2019).
[2] Y. Yomogida et al., Appl. Phys. Lett. 116, 203106 (2020).
[3] J. H. Lim et al., J. Ind. Eng. Chem. 15, 860-864 (2009).

- 98 -

2P-26
Polarized Raman Spectra of LaAlSiżTong Wang1, Xiaoqi Pang1, Nguyen T. Hung2, Riichiro Saito1
1Department of Physics, Tohoku University, Sendai 980-8578, Japan
2Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai

980-8578, Japan
LaAlSi is a type-ჟ Weyl semimetal which has the Weyl nodes crossing the Fermi energy.
In order to investigate the symmetry of phonon modes, polarized Raman spectroscopy is a
useful tool. In this study, we present the calculated polarized Raman spectra and polar plot ofRaman intensity for LaAlSi.
The resonant Raman spectra of LaAlSi areshown in Figure 1 for five polarization angles.
There are five phonon modes which include 3
B1 modes and 2 A1 modes. For B12 mode at
303 cm-1, the peaks appear at 0, 90, 180 degrees
and disappear at 45, 135 degrees. By analyzing
with group theory, the B1 mode has four-foldsymmetry for the Raman intensity as a functionof the angle, and the main peaks in polar plot
appear at 0, 90, 180 degrees. However, thefour-fold symmetry is broken in the calculated
polar plot of the Raman intensity. In the poster
section, we discuss the reason of the broken forfour-fold symmetry.

B11 A11

B12

B13

A12

Figure 1. Polarized Raman spectraof LaAlSi by using laser energy
785nm.

In order to calculate the Raman intensity, we have used our own program [1] combinedwith the first-principle calculation, in which the electron-photon and electron-phonon
interaction matrix elements are obtained by the Quantum–Espresso package [2] and EPW
package [3], respectively.
[1] Y. Tatsumi, R. Saito, Phys. Rev. B 97, 115407 (2018).
[2] P. Giannozzi, et al., J. Phys.: Condens. Matter 21, 395502 (2009)[3] J. Noffsinger, et al., Compt. Phys. Commun. 181, 2140 (2010)
Corresponding Author: Tong Wang
E-mail: wang@flex.phys.tohoku.ac.jp- 99 -

2P-27         
7/1).11&%%%*.15)* 1/1)1' 
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai,
Tsukuba, Ibaraki 305-8571, Japan
+(5-1%**!$/!!*00.0%*#)1$00!*0%+*/1%( %*# (+' +" 2.%+1/ .!( *  $5,+0$!0%(.+* ((+0.+,!/ +2!.%*# (( %)!*/%+*/ !1/!+" 0$! 1*/01.0!   !(!0.+* /00!/ +" ,!*0#+*(.%*#+2(!*0*!03+.'/+",+(5-1%**!+/%+*((5,+//!//1*1/1(!(!0.+*%/0.101.!/0$0.!/!*0%*0$!*!03+.'//+.!(5+*/%/0%*#+"$!4#+*(.%*#/
*  %0%+* 0+ 0$! !(!0.+*% /0.101.! 0$! (.#!*1)!.+",+//%(!+)%*0%+*/* ..*#!)!*0/+" ,+(5-1%**! *  +0$!. $5 .+.+*/ 1/!/ 0$!.%$ )+.,$+(+#%( 2.%!05 +" ,+(5-1%**!
!.%20%2!/+.!4),(!1'!0(.!,+.0! 0$0 1% /0.101.! +1(  ! /5*0$!/%6!  1/%*# !*0.$!4%* *! 3$%$ $2!  ,+(5-1%**!
/0.101.!%*0$!!*0!.*0$%/3+.'1/%*#0$! !*/%05"1*0%+*(0$!+.5
3%0$ #!*!.(%6!  #. %!*0 ,,.+4%)0%+* 3!
0$!+.!0%((5 !/%#*!  0$.!! %)!*/%+*( +2(!*0*!03+.'/ 5 +,+(5)!.%6%*# !*0.+$!4-1%**!
%#  3$%$ .! ..*#!  0 0$! 2!.0!4!/ +"
1% +2(!*0 *!03+.' *  5(++00!0.!*!
3$%$ .! ..*#!  0 "!/ +" 0$! 1% *!03+.'+. %*#(5 0$! +,+(5)!./ .! 0$.!! %)!*/%+*(.+* ((+0.+,!/ +*/%/0%*# +" +0$ /, *  /,  0+)/ "+.)%*#  **++4!/ 3$%$ .! +**!0! !$ +0$!./ 3%0$   %#  *  
%#  /5))!0.%!/ +3%*# 0+ 03+ ,+//%(!..*#!)!*0/ +" !*0.+$!4-1%**! 1. (1(0%+** /%)1(0%+*/$+30$00$!+0$+"
+,+(5)!./.!!*!.#!0%((5* 0$!.)((5/0!(!.!/,!0%2!(5$!!(!0.+*%/0.101.!+"+,(+5)!./
.!)!0(/
%# !+)!0.% /0.101.! +" 
!*0.+$!4-1%**!**++4!/3%0$
  *    **++4!/ 3%0$  /5))!0.5 .5 *  3$%0! /,$!.!/ !*+0!
/, * /,0+)/.!/,!0%2!(5+..!/,+* %*# 10$+. 1&%%
)%( 5"1&%% +)/"./0/1'1&,- 100 -

3P-1
Elucidation of adsorption state of polybenzimidazole on carbon surface byadsorption isotherm measurementżNana Kayo1, Tsuyohiko Fujigaya1, 2, 3
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
CMS, Kyushu University, Fukuoka 819-0395, JapanIn polymer electrolyte fuel cells (PEFC), a composite
of carbon black (CB) with platinum particles (Pt) is
widely used as an electrode catalyst after mixing withacidic electrolyte. However, low platinum utilization
efficiency because of the uneven distribution of acid
electrolyte on the CB surface that caused the insufficient,
protons transport was the issue [1]. We reported theimprovement of platinum utilization efficiency andpower density by coating of polybenzimidazole (PBI) Fig. 1 Schematic illustration of thisonto CB surface prior to the platinum loading [2], in research.
which the distribution of the electrolyte become uniformby the coating of PBI (Fig. 1). However, coating state such as homogeneity and coverage ratioof PBI onto CB has not been clarified yet.
In this study, the adsorption state of PBI on carbon
materials such as CB (Vulcan) and carbon nanotube (CNT)
was studied by the adsorption isotherm and the interaction
between the CB and PBI was investigated. Fig. 2 showed theadsorption isotherm of PBI on CB measured at 25 °C using
N,N-dimethylacetamide (DMAc) as a solvent. It was revealed
that PBI adsorption reached adsorption equilibrium from a
low concentration (0.005 mg/mL), suggesting that PBI was
adsorbed in a monolayer manner on the CB quite efficiently.
In addition, the PBI coverage ratio calculated from theLangmuir equation showed as high as 99.9% at the Fig. 2 Adsorption isotherm of PBI
concentration of 0.50 mg /mL used for the PBI coating.
onto CB.
Therefore, we concluded PBI uniformly coats CB inmonolayer. Based on the adsorption isotherm experiments at different temperature, ǻH and ǻS
were estimated to be 14 kJ/mol and 0.11 kJ/mol, respectively. The temperature dependence of
the isotherm revealed that this adsorption process was entropy-driven process since the PBI
adsorption amount was increased with increasing the temperature. The adsorption behavior andinteraction of PBI with other carbon materials including CNT will be discussed in thepresentation.
[1] S. Jayawickrama et. al., Electrochim. Acta, 312, 349 (2019).
[2] T. Fujigaya, et al., ACS Appl. Mater. Interfaces, 8, 14494 (2011)
Corresponding Author: T. Fujigaya
Tel/Fax: +81-92-802-2842,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 101 -

3P-2
Understanding the Effect of Sulfur on the Synthesis of Carbon Nanotubes
ż Rei NAKAGAWA1, Michiko EDO1, Hisashi SUGIME1, Suguru NODA1,2,*
1
Department of Applied Chemistry, 2Waseda Research Institute for Science and Engineering,
Waseda University, Tokyo, Japan
Carbon Nanotubes (CNTs) are attractive with high hopes in many different fields fortheir excellent properties. However, the practical applications of CNTs has been a challenge
due to their high price and/or insufficient quality. Floating catalyst chemical vapor deposition(CVD) enables the synthesis of high quality CNTs, but it has had an issue with its low catalyst
usage. To combat this situation, many groups have conducted research to improve theproductivity of this process, and as a result it has been reported that the implementation of sulfur
can increase the overall yield of floating catalyst CVD [1]. Many groups have proposed positiveroles of sulfur; Fe-S to be the active site for catalytic reaction or reduced surface energy of FeS for nucleation of small Fe particles. However, these models are not supported by clear
evidences and are not applicable to supported catalysts.
Here, we propose an opposite model where sulfur deactivates the Fe catalyst. Small
amount of sulfur forms an inactive region on a Fe particle, and the inactive region works as an
entrance for the carbon source without being
covered with graphitic carbon. The analysis of
this is difficult for floating catalysts, therefore
for this research, supported catalysts were usedby implementing graphite sheets as substrates
to replicate the floating catalysts with sphericalstructure. Scanning electron microscope(SEM) shows that CNTs were only synthesizedwhen S was supplied during synthesis (Fig.

a.) Effect of Sulfur
S (g)FeGraphite sheet

Fe
Graphite sheet
Al2O3 : 0.25, 0.5, 1.0 nm

w/o S

w/o Al2O3

500 nm

500 nmw/ S1a). Additionally, to confirm the importance of
having an inactive region within the catalyst
particle for CNT synthesis, a thin Al2O3 layer
was deposited on top of the Fe catalysts. The
thin Al2O3 layer significantly enhanced theCNT growth (Fig. 1b) in a similar manner assulfur. These results suggests a new approachfor future catalyst design.

b.) Effect of Al2O3

w/ Al2O3

500 nm

500 nmFig. 1. SEM analysis of graphite substrates after
CNT synthesis. (a) Sulfur vapor was supplied to the
Fe catalyst during synthesis. (b) Al2O3 thin layer
was deposited on the Fe catalyst.

[1] H.M. Cheng, et al., Appl. Phys. Lett. 72, 3282 (1998).
Corresponding Author: S. Noda, Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 102 -

3P-3
Directional exciton diffusion in pentacene-decorated carbon nanotubesżZhen Li1, 2, Keigo Otsuka2, Daiki Yamashita1, Yuichiro K. Kato1, 2
1Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics,
Saitama 351-0198, Japan
2
Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama 351-0198, Japan
Photoluminescent carbon nanotubes are anticipated to become versatile room-temperaturesingle-photon sources that are crucial for quantum information processing. The opticalprocesses in carbon nanotubes are dominated by the so-called excitons, whose binding energies
are sensitive to the surrounding dielectric environment. To modify the exciton properties incarbon nanotubes, molecular adsorption has been proven as an effective approach [1-3]. Whensuitable molecules are adsorbed onto a nanotube, excitons nearby are expected to accumulate
at the adsorbed site and engage in enhanced exciton-exciton annihilation, leading to singlephoton emission at wavelengths modulated by the molecules.
Here, by decorating individually suspended single-walled carbon nanotubes with isolated
pentacene particles, we demonstrate tuning of the excitonic energies and directional exciton
diffusion induced by molecular screening. Pentacene particles with controllable sizes in therange of tens of nanometers are deposited onto the nanotubes via thermal evaporation. Brightphotoluminescence is observed, and peaks corresponding to the pristine region and thepentacene-adsorbed site on the nanotube can be distinguished in the photoluminescence
excitation spectra. The excitonic energies are lowered at the adsorbed site compared to that in
the pristine region as evidenced by the redshifted emission wavelengths. Importantly,
directional exciton diffusion is achieved, where excitons transfer from the pristine region to theadsorbed site on the nanotube due to the energy difference. Time-resolved photoluminescencemeasurements reveal the exciton lifetimes, and photon antibunching is demonstrated in theadsorbed region.
Work supported in part by MIC (SCOPE 191503001), JSPS (KAKENHI JP20H02558,
JP20K15121, JP20K15137, and JP20K15199), and MEXT (Nanotechnology Platform
JPMXP09F19UT0079). K. O. and D. Y. are supported by the JSPS Research Fellowship. We
acknowledge the Advanced Manufacturing Support Team at RIKEN for technical assistance.
[1] T. Uda, A. Ishii, Y. K. Kato, ACS Photonics 5, 559-565 (2018).
[2] T. Uda, S. Tanaka, Y. K. Kato, Appl. Phys. Lett. 113, 121105 (2018).
[3] S. Tanaka, K. Otsuka, K. Kimura, A. Ishii, H. Imada, Y. Kim, Y. K. Kato, J. Phys. Chem. C 123, 5776-5781(2019).

Corresponding Author: Yuichiro K. Kato
Tel: +81-48-462-1449
Web: http://katogroup.riken.jp
E-mail: yuichiro.kato@riken.jp- 103 -

3P-4
                       

F/3>++C+=23 &=?C92359?431+C+   &97923<9%23<+53 
%&("#($ %%! "'(&++)')#*&'(+) )$    %# +)')#*&'(+) )$    %# +)')#*&'(+) )$    %#%3816/A+66/. -+<,98 8+89>?,/= %'!&= A3>2 =/73-98.?->381 0/+>?</= =29A
:29>96?738/=-/8-/# 38>2/8/+<380<+</.!$</1398+8.+</:<973=38109<+::63-+>398=
=?-2 += 9:>3-+6 -977?83-+>398 ./@3-/= &2/ #  +<3=/= 0<97 >2/ </-97,38+>398 90 /B-3>98
1/8/<+>/. ,C >2/ :29>9/B-3>+>398 90 %'!&= $/-/8>6C 69-+6 -2/73-+6 0?8->398+63D+>398 2+=,//8 -98.?->/. 09< =><?->?<+6 ./0/-> .9:381 >9 >2/ -<C=>+6638/ =/73-98.?->381 =><?->?</= 90%'!&== + </=?6> 8/A /73==3@/ =3>/= >2+> 2+@/ 8+<<9A/< ,+8.1+:= +8. /B-3>98 ><+::381
0/+>?</= +</ -</+>/. +8. >2/ 69-+66C 0?8->398+63D/. %'!&= 60%'!&= /73> </.=230>/. +8.,<312>/< # -97:+</.>9 # 90:<3=>38/%'!&=&2/ # A+@/6/81>2=9060%'!&=
+</ -2+81/. A3>2 >2/ ./:/8./8-/ 98 >2/ 0?8->398+63D/. 796/-?6/= 90 >2/ .9:/. =3>/= 9<
/B+7:6/9BC1/8.9:381?=3819D98/></+>7/8>:<9.?-/./>2/<+8. 9</:9B3./=><?->?</=38>2/
60%'!&= A23-2 =29A/. .300/</8> #  A+@/6/81>2= ./:/8.381 98 3>= =><?->?</ )  *
<C6.3+D983?7=+6>=-</+>/.=: -+<,98./0/->=09<>2/60%'!&=38A23-2=?,=>3>?/8>=90>2/
0?8->398+63D/.+<C61<9?:=+8.:<9B37+6.9:381A/</09?8.>9=230> # A+@/6/81>2=) */</A/?>363D/.9<1+83-+D3./-97:9?8.=>9=C8>2/=3D/60%'!&=9<>2/69-+6-2/73-+6
0?8->398+63D+>398%'!&=A/</=96?,363D/.38+=?<0+->+8>=96?>39890 "+8.</+->/.A3>2+8
+D3./-97:9?8.31 =29A=# =:/-><?790>2/=C8>2/=3D/.60%'!&=&A9# :/+5=A/</
9,=/<@/. +>  87 +8. 87 &2/ 09<7/< 98/ 3=
+==318/.+= # +8.>2/6+>>/<98/>2+>+::/+<=+0>/<>2/-2/73-+6</+->3983=-98=3./</.+= # 0<97>2/.9:/.
=3>/=8>/</=>3816C>2/38>/8=3>C90 # +0>/<>2/</+->398
2+<.6C./-</+=/.-97:+</.>9>2/>C:3-+660%'!&=&23=
</=?6>38.3-+>/=>2+>89>986C # A+@/6/81>2=,?>+6=9
-98@/<=398/003-3/8-C90/B-3>98>9# -9?6.,/-2+81/.
./:/8.38198>2/.9:/.=3>/=><?->?</=>7+C</6+>/>9>2/
.300/</8-/38/6/-><98+8./B-3>9869-+63D+>398+>>2/.9:/.
=3>/= A23-2 A+= 38.3-+>/. ,C ./8=3>C 0?8->398+6 >2/9<C-+6-?6+>398 </=?6>= &2?= +D3./ -97:9?8.= A9?6. ,/
?=/0?6>90?8->398+63D/+8.79.?6+>/!$# :<9:/<>3/=90 31 # =:/-><?790>2/=C8>2/=3D/.
60%'!&=,+=/.98>2/?83;?//B-3>98,/2+@39<=
60%'!&/B 87) *$'/3=7+8(!%-3/8-/ ) *>998(!%!+89   ) *('+81(!!+>2/7  )*&%23<+53(!2/7977?8  )*&%23<+53(!%-3</:    9<</=:98.381?>29<&%23<+53&/6 +B     '/,2>>: AAA-2/75C?=2??+-4: E030>2 4: 7+36=23<+53>97923<9 75C?=2??+-4:

- 104 -

3P-5
Temperature dependence of Raman G-band shift in defective single-walledcarbon nanotubesżMasanori Endo1, Haruki Uchiyama1, Yutaka Ohno1,2 and Jun Hirotani1
Department of Electronics, Nagoya University, Nagoya 464-8601, Japan
2
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan
1

Temperature coeffieint ofRaman G+-peak shift (cm-1K-1)

Carbon nanotubes (CNTs) are considered good thermal management devices, [1] and thethermophysical properties of CNTs have been explored by various methods such as Raman
spectroscopy, IR thermometry, and scanning thermal microscopy. Raman spectroscopy is a
powerful tool for simultaneously heating samples and measuring sample temperature.
Temperature of CNTs inside the laser spot can be obtained by the G-band shift. In a previous
study, the Raman shift of the G-band was found to exhibit universal temperature dependence inseveral CNT samples grown by different methods. [2] However, the relationship between awide range of quality of CNTs and temperature dependence of G-band shift is still unclear. In
this work, we have investigated temperature dependence of Raman G-band shift and estimatedthermal and electrical conductivities of CNT thin film of various degree of defect densities.
High-quality single-walled CNTs
with a G/D ratio of ~90 were grown-0.020by floating-catalyst chemical vapor
deposition. A CNT thin film was-0.022
formed on a Si substrate by the drytransfer
process.
Ramanmeasurement was conducted in-0.024
vacuum of 3×10-2 Pa. A 532-nm
excitation laser was used for Raman-0.026
measurement. The excitation power
was set to be 103 W/cm2 so as not toelevate the temperature of the CNT-0.028thin film. Temperature of the sample
was controlled by a Peltier module.
-0.030
Defects were induced by UV/ozone
0
20
40
60
80
100
treatment. [3]G/D ratio
Figure 1 shows the temperature
coefficient of Raman G+-peak Figure 1. Relationship between G/D ratio andfrequency as a function of G/D ratio. temperature coefficient of Raman G+-peak shift.
As G/D ratio decreased, thetemperature coefficient was increased, which might be attributed to bond-softening due toincreased defects. In addition, we investigated the effect of the defect introduction on both
thermal and electrical conductivities. It was found that the electrical conductivity was degradedmore significantly with a decrease in G/D ratio than thermal conductivity was.
[1] B. Kumanek and D. Janas, J. Mater. Sci. 54, 7397 (2019).
[2] S. Chiashi et al., Jpn. J. Appl. Phys. 47, 2010 (2008).
[3] Y. Nonoguchi et al., J. Appl. Phys. 126, 135108 (2019).
Corresponding Author: J. Hirotani, Phone & Fax: +81-52-789-5455, E-mail: hirotani@nuee.nagoyau.ac.jp- 105 -

3P-6
Doping of single-walled carbon nanotube by thermal evaporation methodżRyohei Yamaguchi1, Kaito Oda2,3, Motohiro Tomita2,3, Takanobu Watanabe2,3,Tsuyohiko
Fujigaya1,4,5
1

Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan
3
Japan Science and Technology Agency (JST) CREST, Tokyo 102-0076, Japan
4
WPI- I2CNER, Kyushu University, Fukuoka 819-0385, Japan
5
Center for Molecular Systems (CMS), Kyushu University, Fukuoka 819-0395, Japan
2

Single-walled carbon nanotubes (SWNTs) is ideal materials for thermoelectric (TE) conversion
because of their high Seebeck coefficient and electrical conductivity. Development of thewearable thermoelectric device using SWNTs is now investigated by taking advantage of theirfilm toughness and flexibility. Up to date, ʌ-shape structure has been proposed for the SWNT
thermoelectric devices. However, this structure needs to attach on a skin vertically and notpreferable for the wearable application. Therefore, we proposed a new planar-type structureusing SWNT sheet (Fig. 1a) [1]. The planar-type SWNT TE device can attach on the skinsurface and preferable as a wearable device.
DE̴Fig.1 (a) Schematic illustration of planar type TE device using SWNT sheet. (b) Photograph and (c) Seebeckcoefficient imaging of the DMBI-I-doped SWNT sheet covered mask.

Since sequential repeating of p-type and n-type properties are necessary for the devices, in thisstudy, we investigated the patterned doping of p-type SWNT sheet into n-type using thermal
evaporation method. To realize this idea, 2-(2-Methoxyphenyl)-1,3-dimethyl-1Hbenzoimidazol-3-ium iodide (DMBI-I) was used as a dopant [2]. We depositted DMBI-I to
SWNT sheet having a thickness of 50 mm by masking a part of the sheet as shown in Fig. 1b.
Seebeck coefficent of the obtained SWNT sheet was mapped by thermal probe micro image(ADVANCE RIKO Inc.; STPM-1000) and found that the masked area keeped p-type, while
exposed area was turned to n-type (Fig. 1c) [3].
[1] T. Watanabe et al., IEEE EDTM., 86 (2017).
[2] Z. Bao et al., Proc. Natl. Acad. Aci. USA, 111, 4776 (2014).
[3] R. Yamaguchi et al., in preparation.
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 106 -

3P-7
Growth of Monolayer MoS2 Lateral p–n Junction
with p-type Substitutional Nb DopingżMitsuhiro Okada1, Toshifumi Irisawa2, Naoya Okada2, Wen-Hsin Chang2, Tetsuo Shimizu1,
Toshitaka Kubo1, Masatou Ishihara1
1

2

Nanomaterials Research Institute, AIST, Tsukuba 305-8565, Japan
Device Technology Research Institute, AIST, Tsukuba 305-8568, JapanThe development of carrier doping is one of the most significant issues in achieving highperformance two-dimensional (2D) transition metal dichalcogenides (TMDs) based devices.
Substitutional doping technique is a common carrier doping method in conventional
semiconductors due to its thermodynamic stability. However, for TMDs, the substitutional
doping method is still in infancy. In this work, we report the chemical vapor deposition (CVD)
growth of monolayer MoS2 p–n lateral homojunction. Local doping of Nb, an acceptor ofGroup-VI TMDs by substitution for Mo or W [1], has allowed us to obtain monolayer MoS2based p–n diode: the obtained crystal shows current rectification behavior at the interface
between Nb-doped and non-doped MoS2 layers.
MoS2 lateral p-n junction has been grown by a CVD method with alkali-metal assistance [2].
As metal precursors, we have used MoO3 and Nb for Mo and Nb source, respectively. Due tothe large vapor pressure difference of these precursors, we have succeeded in doping Nb locallyat an edge of a MoS2 crystal. Partially-Nb-doped MoS2 crystal was confirmed, using scanningelectron microscope (SEM), whose image is shown in Fig. 1. The
contrast difference between inner and outer regions of atriangular crystal is caused by the electronic structuraldifference.
Field-effect transistor (FET) characteristics of an Nb-doped(outer) and a non-doped (inner) region of a MoS2 crystal isshown in Fig. 2. FET characteristics measured in the outer andFig. 1. SEM image of athe inner region shows p- and n-type operation, respectively. partially-Nb-doped MoS2.
Figure 3 shows an Ids–Vds characteristic of the Nb-doped MoS2–
non-doped MoS2 interface. The result shows current rectification
behavior, indicating that p–n junction is formed at the interface.
In summary, we have grown monolayer Nb-doped MoS2–
non-doped MoS2 lateral homojunction by the CVD method. The
obtained homojunction shows a diode behavior, indicating the
p–n junction formation at the interface. Our findings would be a
Fig. 2. Ids–Vg characteristics ofbasis of doping technology on TMDs.
an obtained crystal.

This work was supported by JSPS KAKENHI Grant No. 19K15403 and JSTCREST Grant No. JPMJCR16F3, MEXT, Japan.
[1] K. Dolui et al., Phys. Rev. B, 88, 075420 (2013).
[2] S. Li et al., Appl. Mater. Today, 1, 60 (2015).
Corresponding Author: M. Okada
Tel: +81-29-861-2880, Fax: +81-29-861-3005,
Web: https://unit.aist.go.jp/nmri/index.html
E-mail: mi.okada@aist.go.jp

Fig. 3. Ids–Vds characteristic of
Nb-doped
MoS2–non-doped
MoS2 interface.

- 107 -

3P-8
Two-dimensional silicon phosphide with anisotropic optical and electronic
propertiesżMikio Kobayashi, Keisuke Shinokita, Yuhei Miyauchi, Kazunari Matsuda
Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan
Two-dimensional layered semiconductors have recently attracted tremendous interest,
because of their novel optical and electronic properties. Layered silicon phosphide (SiP) is apromising candidate for the next-generation optoelectronic devices because it is theoretically
predicted to have unique properties including high stability in air, high carrier mobility(2.034×103 cm2V-1s-1), anisotropic electronic properties, and bandgap in visible region [1-2].
However, the intriguing properties are not well verified experimentally, since the synthesis of
the SiP crystals was succeeded quite recently [1]. Here we studied the electronic and opticalproperties of layered SiP by using optical absorption, Raman scattering, and photoluminescence(PL) spectroscopy.
zFig. 1(a) shows optical image of the mechanically exfoliated SiP crystal synthesized using
Flux zone technique. The different flake shapes of plane- and needle-shape indicate the layered
SiP crystal contains two allotropes in growth process. Fig. 1(b) shows Raman spectra of the twoallotropes. The different Raman spectra indicate the two allotropes have different crystal
structure: The plane- and needle-shaped SiP can be assigned to orthorhombic structure with
Cmc2 space group (o-SiP) and lower-symmetry crystal structure, respectively. The PL spectra
have peaks at 1.74 eV and 1.87 eV for plane- and needle-shaped SiP, respectively, as shown in
Fig.
1(c), suggesting different
bandgap transition energy andelectronic state of two crystal
structures. Figure 1(d) shows thepolarization dependence of PL
intensity of two allotropes. Both theplane- and needle-shaped SiP show
polarization-dependence,indicating the anisotropic opticalproperties originating from thecrystal structure of two allotropes.
Our experimental results of opticaland electronic properties of layered
SiP suggest the possibility oftunable optical and electronic
properties while retaining theanisotropic properties by changing
crystal structure of 2D materials.
[1] C. Li et al., CrystEngComm, 19, 6986 (2017).
[2]S. Zhang et al., 2D Mater. 4, 015030 (2017).
Corresponding Author: K. Matsuda
Tel: +81-774-38-3465

Fig1 (a) Optical images of SiP crystal. (b) Raman
scattering spectrum and (c) PL spectrum of SiP.
(d) Polar plot of the integrated PL intensity.

E-mail: matsuda@iae.kyoto-u.ac.jp- 108 -

3P-9
Electron transport properties of WTe nanowire networksżHiroshi Shimizu1, Jiang Pu2, Hong En Lim1, Yusuke Nakanishi1, Zheng Liu3,
Takahiko Endo1, Taishi Takenobu2, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan2
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
3
Innovative Functional Materials Research Institute, AIST, Nagoya 463-8560, Japan
Transition metal chalcogenide (TMC) nanowires (Fig.1a) have attracted much attention inrecent years because of their one-dimensional metallic properties and electronic device
applications. To date, many groups have reported the preparation and properties of individualand bundled TMC nanowires including as Mo6S6, Mo6Se6, and Mo6Te6 [1-5]. Recently, ourgroup has achieved large-area growth of TMC nanowires using chemical vapor deposition(CVD) [6]. Depending on the affinity with substrate surface, this technique also enables
network formation of either aligned atomically thin two-dimensional (2D) sheets or random
network of three dimensional (3D) bundles composing of individual nanowires. For thesesamples, it is expected that the morphology such as bundle size will strongly affect the electrontransport properties of TMC nanowire networks.
In this study, we have investigated the temperature dependence electron transport of WTenanowire networks with various densities and morphologies. The samples were grown on SiO2
or Al2O3 surface using CVD, and the network formation was confirmed using scanning electron
microscope (SEM)(Fig.1b). At room temperature, the sheet resistances of samples vary from 2
k: to 75 M: depending on the nanowire density. The high-density network shows a metallic
behavior from room temperature to 20 K, whereas almost no temperature dependence isobserved for the low-density network (Fig.1c). In the presentation, we will discuss a possible
mechanism for the temperature dependence electron transport.

Figure 1 (a) Structure model of the WTe nanowire. (b) SEM image of WTe nanowire network. Scale bar is 10 Pm.
(c) Temperature-dependent resistance (normalized to 300 K) of the random networks of WTe nanowires withvarious nanowire densities (Low, middle, and high densities).
[1] L. Venkataraman et al., Phys. Rev. Lett., 83, 5334 (1999).
[2] L. Venkataraman et al., Phys. Rev. Lett., 96, 076601 (2006).
[3] J. Kibsgaard et al., Nano Lett., 8, 11 (2008).
[4] J. Lin et al., Nat. Nanotechnol., 9, 436 (2014).
[5] M. Nagata et al., Nano Lett., 19, 4845–4851 (2019).
[6] H.-E. Lim et al. Submitted.
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp- 109 -

3P-10Preparation of ruthenium oxide-[C60]fullerene nanowhisker composites
and their photocatalytic activity for degradation of azo dyesżJeong Won Ko1, Sugyeong Jeon2, Weon Bae Ko1,2,3
1

Nanomaterials Research Institute, 2Department of Convergence Science, Graduate School,3
Department of Chemistry, Sahmyook University,
815, Hwarang-ro, Nowon-gu, Seoul 01795, Republic of Korea

Ruthenium ( Ǧ ) chloride hydrate (RuCl3 y nH2O) and polyvinyl pyrrolidone(PVP) weredissolved in mixed solvents of distilled water and methanol. Then, sodium borohydride(NaBH4) was put into it. The solution was continuously stirred to prepare ruthenium oxide for
6 h [1]. Ruthenium oxide-[C60]fullerene nanowhisker composite was synthesized by using
ruthenium oxide solution, C60-saturated toluene, and isopropyl alcohol by liquid-liquidinterfacial precipitation (LLIP) method [2]. The surface morphology, particle size, andproperties of ruthenium oxide-[C60]fullerene nanowhisker composites were examined using
scanning electron microscopy (SEM), X-ray diffractometer (XRD), Raman spectrometer andUV-vis spectrophotometer.
Ruthenium oxide-[C60]fullerene nanowhisker composite as photocatalyst for degradation ofvarious azo dyes were irradiated ultraviolet light at 254 nm. The order of photocatalytic
degradation efficiency of azo dyes with ruthenium oxide-[C60]fullerene nanowhisker
composites was Methyl Orange (MO) > Acid Orange 7 (AO7) > Acid Yellow 23 (AY23).
Kinetic study for photocatalytic degradation of azo dyes was followed a pseudo-first order
reaction.
MO
AO7
AY23

0.0
-0.5

ln(C/C0)

-1.0
-1.5
-2.0
-2.5
y = a + b*x

Equation

-3.0

MO

Plot

AO7

-3.5

AY23

--

-Intercept

0.1487 ± 0.0871

Slope-0.23302 ± 0.0091 -0.08518 ± 0.0073 -0.06567 ± 0.0018
0.98933

R-Square (COD)-0.11278 ± 0.0701 -0.04223 ± 0.0178
0.950240.99434

-4.0
0

2

4

6

8

10

12

14

16

Time (min)Fig.1 Kinetics study for degradation of azo dyes with ruthenium oxidew-[C60]fullerene nanowhisker composites.
[1] L. Xu and J. Yang, Phys. Sci. Rev. doi.org/10.1515/psr-2017-0080 3, 12 (2018).
[2] K. Miyazawa et al. Surf. Eng. doi.org/10.1080/02670844.2017.1396779 (2017).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318,
E-mail: kowb@syu.ac.kr- 110 -

3P-11
CNT/copper composite yarn made from metallic nanoparticle-decorated
spin-capable CNT forestżKosuke Tanaka, Takayuki Nakano, Yoku Inoue
Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561, Japan

Carbon nanotubes (CNTs) are lightweight and have excellent mechanical, thermal, andelectrical properties. Since it can be upsized using the dry spinning, it is being researched toapply to various fields. In particular, CNT yarn is expected to play a role as an alternative to thecurrently used wire rods. However, the electrical conductivity of the CNT yarn is smaller thanthat of metallic wires. To solve this problem, a composite of CNT and copper has been
researched. Previously, it has been reported that the current capacity is significantly improvedby uniformly depositing copper even inside the CNT structure.
Therefore, in this research, we aimed to improve the electrical properties by producing acomposite material that contained copper evenly inside the CNT yarn.
FeCl2 was used as a precursor to synthesize a CNT forest by chlorin mediated chemical vapor
deposition (CVD). Then, copper nanoparticles were wholly deposited on CNTs by decomoising
Cu precursor. A CNT web was pulled out from a CNT forest to prepare a CNT yarn. Here, CNTs
are decorated with the Cu nanoparticles, and therefore, Cu nanoparticles were incorporated
inside the yarn. Then, the CNT yarn was dipped in a copper sulfate aqueous solution andsubjected to electroplating treatment to fabricate a CNT/Cu composite yarn. The CNT/Cu
composite yarn after the electroplating treatment was finally reduced by hydrogen.
Figure 1 shows an SEM image of a CNT forest decorated with copper nanoparticles. The
number of Cu nanoparticles was controlled by some deposition parameters. It confirmed thatCu nanoparticles were entirely decorating CNTs inside the forest. Figure 2 shows a crosssectional SEM image of a CNT/Cu composite yarn`. It can be seen that copper is filled inside
the CNT yarn. We found that the incorporated Cu nanoparticles attracted Cu ions inside yarns
during the electroplating, and it resulted in the present uniform composition of Cu and CNT.
Fabrication of the uniform CNT/Cu composite yarn and its electrical properties will be
discussed.
Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356, Web: http://cnt.eng.shizuoka.ac.jp/, E-mail: inoue.yoku@shizuoka.ac.jp

Fig.1 SEM image of CNT forest supporting copper
nanoparticles. Inset shows a high magnification imageof CNTs

Fig.2 SEM image of cross-section of CNT/Cu
composite yarn. Inset shows a high magnifiation
image of the cross-section.

- 111 -

3P-12
Raman scattering spectroscopy of gas-flow oriented single-walledcarbon nanotubes on hexagonal boron-nitride‫ۑ‬Shu Sato, Satoshi Yotsumoto, Masanori Bamba, Taiki Inoue, Shigeo Maruyama,
Shohei Chiashi
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.

It is known that the properties of single-walled carbon nanotubes (SWCNTs) are
affected by the environmental conditions around them. For example, the semiconducting
SWCNTs that are suspended [1] or dispersed in solution [2] emit photoluminescence (PL),while those on silicon substrates do not. On the other hand, semiconducting SWCNTs on
hexagonal boron nitride (h-BN) show PL emission [3]. Recently, the synthesis of theheterostructure of SWCNTs and boron nitride nanotubes (BNNTs) [4] is reported. These
complex systems of SWCNT and h-BN are interesting, however, their properties areveiled. In this study, we directly synthesized SWCNTs on h-BN based on the gas-floworiented CVD method [5] and investigated the optical properties by using Raman
scattering spectroscopy.
SWCNTs were synthesized from Fe catalyst. Using the gas-flow oriented growthtechnique, SWCNTs were directly synthesized on exfoliated h-BN (Fig. 1(a)). The
scanning Raman measurement (Fig. 1(b, c)) shows that a SWCNT was clearly lying on
the surface of h-BN and that the G-band of the SWCNT on h-BN exhibited the downshiftcomparing to that on SiO2 (Fig. 1(d)). In addition, in the point marked with (B) in Fig.
1(b), the G-band was locally split to G+ and G- peaks and the intensity of the G- peak was
relatively strong. The features of the G-band may come from the interaction between
SWCNTs and the surface of h-BN.
(b)

(a)

(c)

(d)

C

Intensity (arb. units)

A

B

A

B

C

20ʅm
20ȝm

1550

20ȝm

20ȝm

1600

1650
í1

Raman Shift (cm )Figure 1 (a) SEM image of SWCNT on h-BN. (b, c) Scanning Raman images of (b) the G-band and (c) E2g
peak of h-BN intensity, respectively. (d) G-band of SWCNT on h-BN (A, B in Fig. 1(b)) and on SiO2
substrate (C in Fig. 1(b)).
[1] J. Lefebvre, et al., Phys. Rev. Lett., 90, 217401 (2003). [2] S. M. Bachilo, et al., Science, 298, 2361
(2002). [3] J. C. Noé, et al., Nano Lett., 18, 4136 (2018). [4] R. Xiang, et al., Science, 367, 537 (2020).
[5] S. M. Huang, et al., Nano Lett., 4, 1025 (2004).
Tel/Fax: +81-3-5841-6408, E-mail: chiashi@photon.t.u-tokyo.ac.jp- 112 -

3P-13
Fermi-level dependence of high-harmonic generationin semiconducting single-walled carbon nanotubes with different bandgapsżHiroyuki Nishidome1, Kohei Nagai2, Kent Uchida2, Yota Ichinose1, Junko Eda1,
Hitomi Okubo1, Yohei Yomogida1, Koichiro Tanaka2, 3, Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Kyoto University, Kyoto 606-8502, Japan
3
Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501, Japan
High-harmonic generation (HHG), which is the generation of light with multiple opticalharmonics, is an unconventional nonlinear optical phenomenon beyond the perturbation regime.
HHG has recently been demonstrated in solid state materials,[1] and then how to control suchextreme nonlinear optical phenomena is one of challenging subjects. The HHG in solid arecaused by two distinct dynamics: one is related to nonlinear optical transitions between bands(interband dynamics) and the other is to nonlinear current within a band (intraband dynamics)[2]. In both processes, the electronic structure of materials and the location of Fermi-level willstrongly influence on HHG. Recently, we clarified remarkable characteristics of HHG in single
walled carbon nanotubes (SWCNTs) with different electronic structures.[3] We observed higher
HHG in SWCNTs with larger band-gap. In addition, we observed enhancement of 3rd order
HHG, but reduction of the other HHG by carrier injection into (6,5) SWCNTs (Fig. 1(a)). The
enhancement or the reduction occurred whether the(a)energy of high-harmonics is below or above (Fig. 1(a))[3]. If so, when we use the semiconducting SWCNT withsmall energy gap Eg, which is smaller than the energy of
3rd harmonics, the enhancement will be suppressed. To
understand the detailed mechanism of HHG in
SWCNTs, here we investigated the Fermi-level
dependence of HHG in semiconducting SWCNTs withdifferent Eg.
We prepared a semiconducting-SWCNT thin film
(Semi, Eg = 0.7 eV) and employed side-gating device
using ionic liquid, which enable to tune Fermi level by (b)shift of gate voltage VG. The sample was irradiated with
0.26 eV mid-infrared fs pulse laser, and we investigated
the relationships between HHG and carrier injection.
Figure 1(a) and (b) show the high-harmonic intensities
as a function of VG in (6,5) and Semi, respectively. In
Semi, 5th and 7th harmonics just decreased as the shift of
VG. However, the 3rd harmonics at first increased andthen decreased as the shift of VG. In this presentation, we
will discuss the background using temporal evaluationof wave-packets in two band model.
[1] S. Ghimire et al., Nat. Phys. 7, 138 (2010)[2] O. Schubert et al., Nat. Photon., 8, 119 (2014)[3] H. Nishidome et al Nano Lett. accepted (2020)
Corresponding Author: K. Yanagi, yanagi-kazuhiro@tmu.ac.jp- 113 -

Fig. 1 Fermi-level dependence of highharmonic intensity in (a) (6,5) and(b)Semi.

3P-14
Effects of deposition method on the states of Pt nanoparticles on carbon
materials and their electrocatalytic properties toward methanol oxidationżYuho Abe1 and Hironori Ogata1,2
1Department of Chemical Science and Technology, Hosei University
2 Research Center for Micro-Nano Technology, Hosei University
E-mail: hogata@hosei.ac.jp

Direct methanol fuel cells (DMFCs) are one of the most promising transportable powersources which can be used in mobiles, laptops, and small power generation. The most important
advantage of DMFCs over other types of fuel cells is that methanol can integrate effectively
with transmission and distribution systems that already exist. However, there are technologicalchallenges for the commercialization of DMFCs that remain unsolved [1,2]. The basic operation
principle of DMFCs involves methanol oxidation and oxygen reduction on the precious metal
catalysts, which are loaded on the support surfaces. As is well-known, the dispersion of Ptbased nanoparticles on carbon supports as well as catalyst particle size and shape plays adominant role in the electrochemical performance for fuel cells. We have explored theelectrocatalytic properties of Pt-based nanoparticles supported on the carbon materials by onestep electrodeposition [3]. In this study, we investigated the effects of deposition method andconditions on the shape and dispersion state and electrocatalytic properties of Pt-based
nanoparticles supported on the carbon materials. Especially we picked up the electrodeposition
method and the liquid phase reduction method as the loading method of Pt nanoparticles on
single walled carbon nanotubes (SWNTs) and compared the dispersion state of Pt nanoparticles
on the nanocarbon materials and the oxygen reduction reaction activities. The surface state of
SWNTs, the loading state of Pt nanoparticles and the catalytic properties of electrode were
investigated using TEM, XPS, and cyclic voltammogram (CV).
The detailed results will be presented.

References:[1] N. Pongpichyakul et al., Springer Nature, 50, 51-62 (2019).
[2] I. Martinalou et al., Applied Catalysis B: Environmental, Elsevier, 2019[3] Zhipeng Wang, Mao Shoji and Hironori Ogata, Appl. Surf. Sci.259(2012)219-224.
Corresponding Author: H.Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 114 -

3P-15
F4-TCNQ Vapor-doped Single Walled Carbon Nanotubes for
Thermoelectric Applications
ż Mariamu kassim Ali1, Naofumi Okamoto2, Ryo Abe2, Ahmed Abdel Moneim1, Masakazu
Nakamura2
1

Department of Materials Science and Engineering, Egypt-Japan University of Science andTechnology, New Borg El Arab City, Alexandria 21934, Egypt
2
Division of Materials Science, Nara Institute of Science and Technology,
8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan

Single-walled carbon nanotubes (SWCNT) has emerged as a potential candidate material forthermoelectric (T.E) applications owing to its unique and outstanding electronic properties [1]since its discovery by Iijima [2]. Despite the low power factor associated with CNTs, its
robustness and lightweight nature make it a promising candidate for flexible thermoelectric
applications. From previous study [3], it was shown that CNT yarns have a potential to be
integrated into thermoelectric fabric for wearable energy harvesters. Doping which is a versatiletechnique for tuning the carrier concentration of SWCNTs and the effect of charge transferorganic molecule F4-TCNQ was investigated.
Herein, we successfully synthesized CNT yarns through wet spinning and further vapordoped the yarns by varying amounts of F4-TCNQ. The morphological studies by SEM revealed
that the dopant molecules can successfully penetrate into the porous CNT network and thus
modify the morphology which is expected to influence the T.E characteristics. Furthermore,
Seebeck coefficient and the electrical conductivity were evaluated using four-probe techniquewhile the thermal analysis was done through 3-Ȧ and laser pit techniques, the results of which
will be reported.
This work was supported by JST CREST Grant Number JPMJCR18I3, Japan.

[1] Blackburn, J. L. et al., Advanced Materials, 30: p. 1704386. (2018).
[2] Iijima, S., Nature, 354: p. 56-58, (1991).
[3] M. Ito et al., J. Mater. Chem. A 5: 12068-12072 (2017)

Corresponding Author: M. Nakamura
Tel: +81- 743-72-6031, Fax: +81-743-72-6047,
E-mail: mnakamura@ms.naist.jp- 115 -

3P-16
Operation speed enhancement in carbon nanotube thin film transistors by
self-aligned processżSaya Ishimaru1, Taiga Kashima1, Hiromichi Kataura2, and Yutaka Ohno1,3
1

Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Nanomaterials Research Institute, National Institute of Advanced Industrial Science andTechnology 305-8565, Japan
3
Institute of Material and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan2fT (Hz)(b)
Carbon nanotube thin film transistors (CNT (a)TFTs) are promising for flexible electronics
applications because of the high carrier mobility andoutstanding flexibility. Since conventional
photolithography process on a plastic film requires
an alignment margin due to the thermal shrinkage
during the device fabrication process, large parasitic
Fig.1 (a) Schematic of device.
capacitances are formed by the overlaps between
 (b) Device structure.
the source/drain and gate electrodes. This canbe one of causes of the operation speed
degradation in CNT TFTs.
1M
In the previous work, we reported a selfSelf-alignaligned process for flexible CNT TFTs which
was effective to reduce the parasitic
capacitances. [1] In this work, we evaluate theoperation speed of the self-aligned flexible
Coventional
100k
CNT TFTs by measuring the scattering (S)parameters.
VGS = - 3 V, VDS = -5 V
We fabricated CNT TFTs with a bottom gate
2040
60 80 100
structure on a polyethylene naphthalate (PEN)
L
(m)
ch
film by the self-aligned process (Fig. 1).
Semiconducting CNTs purified by the gelFig. 2 fT versus Lch.
chromatography were used as the channel. The
channel length (Lch) was from 20 to 50 Pm and channel width was 12 mm. A 45-nm-thick Al2O3
gate oxide was deposited by the atomic-layer deposition. We also fabricated CNT TFTs withoverlaps of 20 Pm by the conventional process for comparison. S-parameter measurements werecarried out by using a vector network analyzer (Keysight, E5061B).
The parasitic capacitance Cp was reduced from 780 to 35.8 pF by introducing the self-aligned
process. Figure 2 shows the dependence of current gain cutoff frequency (fT) on Lch at VDS of
5 V and VGS of 3 V. fT was significantly improved by the introduction of the self-aligned
process. The curves in the figure show calculated fT with assuming the carrier mobility of 12
cm2/Vs. Here, a both channel capacitance (Cch) and Cp were taken into account as expressed byfT = gm/2S(Cch + Cp), confirming that Cp is a dominant cause of a degradation in operation
frequency of conventional flexible CNT TFTs.
[1] T. Kashima et al., The 79th JSAP Autumn meeting, 18p-211A-7
Corresponding Author: Yutaka Ohno, Phone: +81-52-789-5387,E-mail: yohno@nagoya-u.jp- 116 -

3P-17
Radical polymerization in the presence of carbon nanotubes (CNTs):
Radical scavenging by CNTs
żTaiyo Shimizu1, Ryoichi Kishi1, Takeo Yamada1, Kenji Hata1
1

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central
5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 Japan

Carbon materials, e.g. carbon black, generally show radical scavenging activities for various
radical species. Among carbon materials, fullerenes show prominent radical scavenging
activities and have been extensively studied for the applications such as biomedicines. In
recent research concerning composite materials [1], it has been found that carbon nanotubes(CNTs) are also capable of scavenging radicals. Radical scavenging activity of CNTs is ofgreat importance because this property is highly beneficial not only for fabricating thermallystable CNT composites but for surface functionalization of CNTs. However, limited numbersof research have been conducted so far, and the details of radical scavenging by CNTs are still
unclear.
In this study, we investigated the radical scavenging activities of CNTs by means of radical
polymerization in the presence of CNTs in the reaction systems. Bulk polymerization ofstyrene dispersing CNTs was conducted by using commonly used radical initiators under N2
atmosphere.
As shown in Fig. 1, we found that the yields ofpolystyrene (PSt) have been affected by the kinds ofradicalinitiators.
In
the
case
of
azobisisobutylonitrile (AIBN), the yield of PSt in thepresence of CNTs is not so much lowered as comparedto that in the absence of CNTs. When using peroxidetype initiators such as benzoyl peroxide (BPO),
however, the yields reach almost zero when CNTs
exist in the reaction systems. This result indicatesthat CNTs possess high affinity for the radicals fromperoxides and not for carbon radicals.
Further
discussions on the results such as the effect of thekinds of CNTs, molecular weight distributions of Fig. 1 Yields of polystyrene (PSt)obtained PSt, surface analysis of the CNT after radical obtained by using different kinds ofradical initiators with and without CNTs.
reactions etc., will be performed on the presentation.
[1] X. Shi et al., Carbon, 50, 1005 (2012).
Corresponding Author: T. Shimizu
Tel: +81-29-861-5712 Web: https://unit.aist.go.jp/cnta/ja/organization/index.html
E-mail: shimizu-t@aist.go.jp- 117 -

3P-18
Effect of Chemical Etching Treatment on Copper Foils for Single-Layer
Graphene CVD GrowthżNaoki Yoshihara1, Masaru Noda1
1

Department of Chemical Engineering, Fukuoka University, Fukuoka, 8-19-1 Nanakuma,
Jonan-ku, Japan

Single-layer graphene growth on commercially available copper foils by chemical vapor
deposition (CVD) is paid the most attention as a mass production technique for practicalapplications in numerous fields. Chemical etching treatment of the copper foils is essential as a
pre-treatment for the graphene CVD growth. This chemical etching plays the role of between
the surface flatness and the removal of impurities and the naturally copper oxide layer. However,
the graphene CVD growth on etched copper foils is still unclear. Here, we investigated the effectof the chemical etching treatment on copper foils for single-layer graphene CVD growth.
Figure 1 showed the optical micrographs of graphene domains grown on the copper foil
(thickness: 25 Pm) treated with 0.2 mol/L iron trichloride (FeCl3) aqueous solution for thedifferent etching time. We synthesized graphene on the etched copper foil under a mixed flowof CH4, H2, and Ar atmosphere at 1000 °C for 1 hr. In all etching conditions, the hexagonalgraphene domains were observed on etched copper foils. Interestingly, the graphene domain
size increased with extending the etching time and the graphene domain on copper foils etchedfor 120 sec is around 4 orders of magnitude larger than that for 15 sec.
It is likely that the observed effect of chemicalb)c)d)etching treatment on the copper surface reflects a)
the graphene nucleation density. Recently, it has
been reported that the presence of oxygen incopper foils is a key factor for decreasing thegraphene nucleation density and accelerating
graphene domain growth [1-2]. However, ourresults cannot account for only this explanation
because a large amount of copper oxide layer on
subsurface of copper foils is eliminated by the Fig. 1 The optical micrographs of graphene
domains on the etched copper foil treated withlonger etching treatment. This might be related FeCl aqueous solution for a) 15, b) 30, c) 60, and3
to surface morphology of the copper foil after the d) 120 sec. All scale bars are 100 Pm.
chemical etching treatment.
[1] Y. Hao et al., Science 342, 720 (2013).
[2] D. Ding et al., Appl. Surf. Sci. 408, 142 (2017).
Corresponding Author: N. Yoshihara
Tel: +81-92-871-6631, Fax: +81-92-865-6031
E-mail: nyoshihara@fukuoka-u.ac.jp- 118 -

3P-19Thermal transport property of suspended twisted bilayer graphene
J. Doi*, S. Mouri and T. Araki
The Graduate School of Science and Engineering, Ritsumeikan University,
Nojihigashi 1-1-1, Kusatsu, Shiga, Japan*email: re0110ev@ed.ritsumei.ac.jp

Graphene has interesting characteristics such as high electron mobility [1] and highthermal conductivity [2]. Especially, bilayer graphene could transmute fromsuperconductivity [3] to insulator with changing twisted angle [4]. Thermal transport
property could be modulated with twisting as well as electronic properties. Thermal
conductivity of suspended twisted bilayer graphene (tBLG) with specific twisted angle
was reported [5], however, precise properties depending on twisted angle have been
unveiled so far. Therefore, here, we studied laser heating effect of suspended tBLGs
having different twisted angles using Raman spectroscopy.
We prepared suspended tBLG on TEM grid which has 2.5ȝm diameter aligned holes by
wet transfer method using PMMA [6]. CVD grown monolayer graphene (Graphenea Co.)
used here contains variety of domains with several micron meter square, then, twisted
angles of tBLG on each hole were different. They were determined by electron beamdiffraction pattern measured with TEM as shown in Fig. 1. We measured Raman spectraof tBLGs having different twisted angles with changing laser power. Peak position of G
mode signal was shifted with increasing laser power due to the laser heating effect asshown in Fig. 2. The slope of Raman shift via laser power was different according to its
twisted angle, which suggests that thermal conductivity of tBLG depends on the twisted
angle.

Figure 1 Electron beam diffraction pattern of tBLG
measured by TEM.

References

Figure 2 Peak position of Raman peak(G mode) measured at different laser
powers.

[1] K. I. Bolotin et al., Solid State Commun, 146, 351 (2008).
[2] A.A. Balandin et.al., Nano Lett, 8, 902 (2008).
[3] Y. Cao et al., Nature, 556, 43 (2018).
This work was supported by JSPS,[4] Y. Cao et al., Nature, 556, 80 (2018).
KAKENHI, #16H06415, #18H04294.
[5] H. Li et al., Nanoscale, 6, 13402 (2014).

- 119 -

3P-20Carrier control in bilayer graphene dual-gate field effect transistors byinterlayer atomic arrangementżYanlin Gao, Susumu Okada
Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
Bilayer graphene is an important material in the field of physics and material science owing
to its unusual electronic structures, which depend on the interlayer stacking arrangement andperpendicular electric field. For instance, bilayer graphene with the AB interlayer stacking
arrangement is a semiconductor under the perpendicular electric field, while twisted bilayer
graphene with a particular magic angle is a superconductor by injecting carriers through theexternal electric field. Although our previous work excluded the dependence of carrier
distribution in bilayer graphene on the interlayer stacking arrangement [1], comprehensive
knowledge about the correlated effect of the stacking arrangement, external electric field, andcarrier concentration on the carrier distribution in bilayer graphene is still absent. Therefore, inthis work, we aim to elucidate the carrier distribution on the bilayer graphene under theperpendicular electric field in terms of the field strength, doping concentration, and interlayer
stacking arrangement, using density functional theory combined with the effective screening
medium method (Fig.1).
Our calculations show that the carrier distribution is sensitive to the stacking arrangement,
external electric field, and carrier concentration. Under a strong electric field with low electron
doping concentration, doped electrons are mainly accommodated in the lower layer situated at
the positively charged electrode side of bilayer graphene with a twisted stacking arrangement,
while those are in the opposite layer situated at thenegatively charged electrode side of bilayer
graphene with an AB stacking arrangement. In thebilayer graphene with an AA stacking arrangement,
the injected electrons are almost equallyaccommodated in both layers. By injecting holes inthe bilayer graphene, their distribution issymmetric to the case of electron doping. These
characteristic asymmetric and symmetric carrier
distributions depending on the stacking
arrangements
anddopingconcentration,
respectively, is ascribed to the electronic structuresof these bilayer graphene under an external electric Fig.1 Structural model of bilayer graphenedual-gate field effect transistor.
field.
Reference[1] Y. Gao and S. Okada, Appl. Phys. Express 13, 065006 (2020)
Corresponding Author: Y. Gao
TEL: +81-29-853-5921, FAX: +81-29-853-5924
E-mail: ylgao@comas.frsc.tsukuba.ac.jp- 120 -

3P-21
Difference of functional groups in Graphene oxide in terms of chemical activityżRiku Kondo 1, Yoshiaki Matsuo 2, Kazuyuki Takai1
1Dept. of Appl. Chem., Hosei Univ., 2 Dept. of Appl. Chem., Univ. of Hyogo.

Graphene oxide (GO) has oxygen-containing functional groups such as epoxy group, carboxylgroup and hydroxyl group. The major GO synthesis methods are the Brodie method [1] and theHummers method [2, 3] in which different oxidizing agents are used. Our group found that theratio of quantities of each kinds of oxygen-containing functional groups depends on theoxidation methods greatly, suggesting that chemical reactivity such as catalytic activity depends
on the GO synthesis methods [4]. In this study, we precisely determined the quantity of eachacidic functional groups in HGO oxidized by the Hummers method and BGO oxidized by the
Brodie method by Boehm titration to clarify their chemical activity.
GO was synthesized by oxidation of natural graphite using concentrated sulfuric acid andpotassium permanganate followed by the modified Hummers method [3], and using potassium
chlorate and fuming nitric acid according to the Brodie method.
The Boehm method based on neutralization titration was used to determine the quantity ofacidic functional groups. In the Boehm method, the synthesized either of HGO or BGO wasadded to NaOH (aq), Na2CO3 (aq), and NaHCO3 (aq) at a concentration of 0.1 mol / L at a ratioof 20 mg / 40 mL, respectively, followed by dispersing by ultrasonication for 1 h. After standingfor 3 days, the mixture was centrifuged for 2.0 h. The acid-base titration was performed for thefiltrate of the supernatant by adding 0.1 mol / L of HCl (aq) dropwisely.
The amount of hydroxide ions consumed by carbon materials indicates the amount of total
acidic functional groups when neutralized by NaOH (aq). Similarly, the amount of moderateand strong acid groups is obtained when neutralized by Na2CO3 (aq). Strong acid content is also
estimated by using NaHCO3 (aq) [3].
Table 1 shows the amount of acidic functional groups of different strengths in GO calculated
from the amount of HCl (aq) added until reaching the equivalent point obtained from thetiltlasions.The total amount of acidic functional groups, strongly, moderately acidic groups in
HGO and BGO are 9 mEq/g and 5 mEq/g, 6 mEq/g and 3 mEq/g, 3 mEq/g and 2 mEq/g,
respectively. Almost no weak acid group were found in both of HGO and BGO. The fact that
HGO has more acidic functional groups than BGO acidic functional groups suggests a
difference in catalytic activity between HGO and BGO.
Table 1 Neutralization of acidic surface-oxides
SampleTotal acidic group

Strong acidic group

Moderate acidic group(mEq / g)(mEq / g)(mEq / g)

HGO

9

6

3

BGO

5

3

2

[1] B. C. Brodie, Philos. Trans. R. Soc. London, 149, 249–259 (1859)[2] W.S. Hummers, R.E. Offeman, Preparation of graphitic oxide, J. Am. Chem. Soc.80 (6) (1958), 1339-1339[3] D. C. Marcano et al, ACS Nano, 4, 8, 4806–4814 (2010)[4] K.Tajima, et al., Polyhedron, 136, 155-158 (2017)

Corresponding Author: Kazuyuki Takai
E-mail: takai@hosei.ac.jp- 121 -

3P-22
Tailor-made two-dimensional nano-scale super-structuresżNanami Ichinose1, Satoshi Iida1, Liu Zheng2, and Ryo Kitaura1
1

2

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Innovative Functional Materials Research Institute, AIST, Nagoya 463-8560, Japan,

Two-dimensional (2D) heterostructures have attracted plenty of attention. To
fully explore the enormous potential of 2D heterostructures, the development of
a highly-controllable fabrication technique is crucial. Although 2D van der Waals
stackings have been intensively studied the research on the lateral heterostructures
is still limited due to the difficulty in fabrication. In this work, we focus on lateralheterostructures, in which different 2D materials are joined multiple
heterojunctions. These are novel low-dimensional materials, whose electronic
states can show crossover from 2D to 1D depending on the junction width.
In this study, we focused on metal organic chemical vapor deposition(MOCVD) growth of lateral heterostructures composed of transition metal
dichalcogenide (TMD). Since various TMDs, including metals, semiconductors,
superconductors, and topological insulators, are available, it is possible to realize
novel 2D superstructures with different electronic states. The MOCVD equipmentused in this research can rapidly switch supply of source materials on the order ofmilliseconds to realize multiple lateral heterostructures with nanometer-scale
periodicity.
In this study, we fabricated lateral heterostructures of WS2/MoS2, on hexagonalboron nitride by sequential growth of WS2 and MoS2 through rapid switching of
supply of W and Mo source. Figure 1 shows HAADF-STEM images of a lateralheterostructures WS2/MoS2. In the HAADF-STEM images, W atoms are images
as bright spots, whereas Mo and S atoms are images as much darker spots. As
clearly seen, the MOCVD-grown multi-step lateral heterostructure possesses
atomically steep interfaces with width down to 3 nm. A trace amount of W atoms
is seen in the MoS2 region, and the number of W atoms can be reduced throughincreasing the interval time
during consecutive MOCVD
growth. In the presentation,
further details of the MOCVD
setup and results of thecharacterization will be shown.
Corresponding Author: R. Kitaura
Tel: +81-52-789-2482, Fax: +81-52-747-6442
Web: http://nano.chem.nagoya-u.ac.jp/
E-mail: r.kitaura@nagoya-u.jp

Fig. 1 Left: A low-magnification HAADF-STEM image of
WS2/MoS2 supper structure. Right: A high-resolution HAADFSTEM image of interface between WS2 and MoS2.

- 122 -

3P-23Chemically tuned p- and n-type WSe2 monolayers with improved carrier
mobility for electronic applicationsĆHyun Goo Ji1, Pablo Solís-Fernández2, Daisuke Yoshimura3, Mina Maruyama4,
Takahiko Endo5, Yasumitsu Miyata5, Susumu Okada4, Hiroki Ago1,2
1Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580
2
Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580
3
Kyushu Synchrotron Light Research Center, Saga 841-0005
4
Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki 305-8571
5Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397

Semiconducting transition metal dichalcogenides (TMDCs),such as WSe2 and MoS2, have attracted great interest due to theirunique physical properties. Although both p- and n-type materials
are required for electronic applications, most of semiconducting
TMDCs exhibit n-type or ambipolar behaviors. Therefore, several
approaches have been reported to control the electrical polarity ofsemiconducting TMDCs, such as substitutional doping oftransition metals and metal nanoparticle deposition [1,2].
However, both methods were found to have critical disadvantages
such as carrier scattering or photoluminescence quenching. As an Fig. 1 Raman spectra of pristineand doped WSe2.
alternative, chemical doping can be a promising method.
Although the usefulness of chemical doping has been
demonstrated [3], the controlled p- and n-type doping of a single
TMDC material has not been reported so far.
In this work, we demonstrate the doping of CVD-grownWSe2 for selective conversion from ambipolar to p- or n-typesemiconductors [4]. This was done by using 4nitrobenzenediazonium tetrafluoroborate (4-NBD) anddiethylene triamine (DETA) molecules as p- or n-type dopants,
respectively. Spectroscopic studies proved p- and n-type doping
as shown in Figure 1. After doping, WSe2 showed clear p- or n- Fig. 2 Transfer curves of pristine
type transport properties (Figure 2) and the effective carrier and doped WSe2.
mobility showed significant increase up to 103~104 times. To
demonstrate the usefulness of our chemical doping technique, acomplementary metal-oxide-semiconductor (CMOS) inverter
was fabricated which showed a sharp inversion between input
and output voltages, as shown in Figure 3 together with anextremely low power consumption. Also, a p-n junction was
fabricated within a single WSe2 grain by developing a spatiallycontrolled doping technique, and it showed clear rectification
behavior as well as optical response under laser illumination.
Fig. 3 Vin-Vout characteristics of a
CMOS inverter made of p- and nReferences: [1] K. Zhang et al., Nano Lett, 2015, 15, 6586. [2] C. H. Chen doped WSe2.
et al., 2D Mater., 2014, 1, 034001. [3] S. Zhang et al., Adv. Mater., 2018,30, 1802991. [4] H. G. Ji et al., Adv. Mater., 2019, 31, 1903613.
Correspondence: H. Ago (Tel&Fax: +81-92-583-8815, E-mail: h-ago@gic.kyushu-u.ac.jp)- 123 -

3P-24
Electrical Conductivity of Chemical-Vapor-Deposition Grown
WTe Nanowire BundlesżChisato Ando1, Yusuke Nakanishi1, Hiroshi Shimizu1, Hong En Lim1,
Zheng Liu2, Takahiko Endo1, and Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
Innovative Functional Materials Research Institute, AIST, Nagoya 463-8560, Japan2

One-dimensional (1D) conducting nanowires are required as a building block to realize an
integrated circuit at the nanoscale, but the studies and applications have never been fully
investigated due to the lack of well-defined materials. Very recently, we have achieved thewafer-scale production of transition metal chalcogenide (TMC) nanowires (Figure 1a) byusing chemical vapor deposition (CVD) [1]. Although we have demonstrated that thesenanowires are metallic, their electrical properties still remain to be fully clarified.
Understanding the transport properties of these ultrathin wires is of critical importance for
future electronics applications.
Here we report the electrical properties of isolated bundles of the CVD-grown WTe
nanowires. We have investigated the electrical conductivity of single bundles with various
diameters by the four-point probe method (Figure 1b). The resistivity of WTe bundles with adiameter of 20 nm was estimated to be approximately 100 cmȝȍ, comparable to Cu
nanowires [2]. In contrast, the current-carrying capacity (7.8×107 A cmí2) of WTe bundles issuperior to bulk copper (2.0×106 A cmí2). Our findings suggest that conducting TMC
nanowires could serve as robust 1D electron channels for flexible integrated nanocircuits. In
the conference, the conductivity of isolated bundles and thier network will also be presented.

Fig. 1 (a) A schematic illustration of transition metal chalcogenide nanowire. (b) I-V characteristic curve for asingle WTe bundle: (inset) a typical scanning electron micrograph of the four-point probe measurement and crosssection transmission electron micrograph of a single WTe bundle.
[1] H.-E. Lim et al. Submitted[2] M. E. Toimil-Molares et al. Appl. Phys. Lett. 82, 2139 (2013)
Corresponding Author: Y. Nakanishi, Y. Miyata
Tel: 042-677-2508, E-mail: naka24ysk@tmu.ac.jp, ymiyata@tmu.ac.jp- 124 -

3P-25

)LUVWSULQFLSOHFDOFXODWLRQRIWKHHOHFWURQLFVWDWHRID'FRYDOHQWQHWZRUN
RIWULDPLQREHQ]HQHDQGEHQ]HQHWULFDUER[DOGHK\GH
+LUR\XNL<RNRL
Institute of Industrial Nanomaterials, Kumamoto University, Kumamoto 860-8555, Japan%RWWRPXSIDEULFDWLRQRIWZRGLPHQVLRQDOQDQRVWUXFWXUHVLVRQHRISURPLVLQJDSSURDFKHVWR
WDLORUPDGH FUHDWLRQ RI QHZ IXQFWLRQDO PDWHULDOV .XQLWDNH HW DO UHFHQWO\ VXFFHHGHG WRV\QWKHVL]H PRQROD\HU FRYDOHQW KRQH\FRPE QDQRVKHHWV FRPSULVLQJ VPDOO WULDPLQR
EHQ]HQH 7$%  DQG EHQ]HQHWULFDUER[DOGHK\GH %7$  DURPDWLF EXLOGLQJ EORFNV RQ
$X   LQ D S+FRQWUROOHG DTXHRXV VROXWLRQ >@7KLV PDWHULDO LV YHU\ LQWHUHVWLQJ LQ WKDW LW
UHVHPEOHVJUDSKHQHZLWKSHULRGLFDORSHQLQJRIUHJXODUSRUHVDQGVXEVWLWXWLRQ,QWKLVVWXG\ZH
KDYH FRQGXFWHG ILUVWSULQFLSOH FDOFXODWLRQV WR LQYHVWLJDWH WKH HOHFWURQLF VWDWHV RI WKLV XQLTXHPDWHULDO7KHDUUDQJHPHQWRIDWRPVZHUHRSWLPL]HGLQWKHFRQGLWLRQWKDWWKHODWWLFHFRQVWDQWRI
WKHKH[DJRQDOODWWLFHLVNHSWQPZKLFKZDVGHWHUPLQHGH[SHULPHQWDOO\>@7KHRSWLPL]HGVWUXFWXUHLVDVVKRZQLQ)LJ:HKDYHFDOFXODWHGWKHHOHFWURQLFVWUXFWXUHDQGFODULILHGWKDWWKLVPDWHULDOKDVDPHWDOOLFEDQGVWUXFWXUHDVVKRZQLQ)LJ2SHQLQJRIEDQGJDSE\DERXW
H9LVUHFRJQL]HGDWWKH'LUDFSRLQWORFDWHGDSSUR[LPDWHO\H9DERYHWKH)HUPLOHYHO:HWKLQN WKDW WKLV HOHFWURQLF VWUXFWXUH LV YHU\ LQWHUHVWLQJ DV WKH SFRQMXJDWHG HOHFWURQLF VWDWHVDSSHDUVDURXQGWKH)HUPLOHYHOLQVSLWHWKDWWKHVL[PHPEHUHGULQJVDUHOLQNHGLQGLUHFWO\WKURXJK±& 1EULGJHV

)LJ2SWLPL]HGVWUXFWXUHRIFRYDOHQWO\ERQGHG7$%

)LJ(OHFWURQLFVWUXFWXUHRIWKHFRYDOHQWO\ERQGHG

%7$QDQRVKHHW

7$%%7$QDQRVKHHWDURXQGWKH)HUPLOHYHO>@0.XQLWDNHet al1DQRVFDOH$GYDQFHV '2,GQDH  &RUUHVSRQGLQJ$XWKRU+<RNRL
7HO)D[ :HEKWWSZZZPVUHNXPDPRWRXDFMSa\RNRLJULQGH[MKWPO(PDLO\RNRLKU#NXPDPRWRXDFMS- 125 -

3P-26
Two-channel model for low thermal conductivity of Mg3Bi2
ż Nguyen T. Hung1, Riichiro Saito2
1
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai
980-8578, Japan2
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Materials with low thermal conductivity ț are of great interest for thermoelectricity (TE).
Although ț in a given material can be reduced by alloying or nanostructuring, finding
materials with intrinsically low ț is still necessary to avoid the expensive fabrication ofnanostructure. Recently, Mao et al. [1] experimentally showed that replacing Te with Mg in acommercial TE material Bi2Te3, a new TE material Mg3Bi2 can performs a figure of merit ZT~ 0.9 with a low ț ~ 2 W/mK at 300K. Since a low ț is important for obtaining a large ZT,
theoretical analysis to understand the low ț of Mg3Bi2 is essential.
In this work, we calculate the țof Mg3Bi2 by using the density
functional theory (DFT). When we
considerthephonon-phonon
interaction to calculate the ț, we
obtained the ț ~ 0.6 W/mK at
300K, which is smaller than that in
the experimental data. It suggeststhat the other term might
contribute to the ț of Mg3Bi2. As Figure 1: (a) Structure of Mg3Bi2. (b) Mg1 and Mg2 coordinations
shown in Fig. 1, Mg3Bi2 has astructure as a crystal with glass-like, in which the structure of Mg3Bi2 can be expressed as
Mg2+-[Mg2Bi2]2-. For such glass-like system, Mukhopadhyay et al. [2] showed that the ț canbe expressed as ț = țc + țg, where țc and țg are thermal conductivites by crystal and glass,respectively, which is called two-channel model [2]. Here, țc is evaluated by the latticeanharmonicity with phonon-phonon interaction from DFT, while țg is calculated by using theEinstein model for glass systems. By adopting the two-channel model, the theoretical resultsof the thermal conductivity of Mg3Bi2 is well consistent with experimental data [1].
[1] J. Mao et al., Science 365, 6452 (2019).
[2] S. Mukhopadhyay et al., Science 360, 1455 (2018).
Corresponding Author: Nguyen Tuan Hung
Tel: +81-22-795-6442, Fax: +81-22-795-6447, E-mail: nguyen@flex.phys.tohoku.ac.jp- 126 -

Ⓨ⾲⣴ᘬAuthor Index

Author Index<A>
AbdelMoneim, Ahmed
Abe, Ryo
Abe, Yuho
Ago, Hiroki
Aizaki, Motoki
Ajiki, Hiroshi
Akino, Kosuke
Akita, Seiji
Alejandro, Criado
Ali, Mariamu
Ando, ChisatoAndo, Hiroshi
Angana, Borah
Antoku, Daiki
Aoki, Haruka
Araki, Tsutomu
Arie, Takayuki<B>
Bamba, Masanori
Bao, Jianfeng
Baranov, Alexander
Barnard, Amanda S.
Bhattacharya, Maireyee
Bogdanov, Kirill<C>
Campeon, Benoit
Chang, Wen-Hsin
Chen, GuohaiChen, Pengfei
Chiashi, Shohei<D>
De Silva K. Kanishka H.
Doi, Juntaro

2-10, 3P-15
1-9, 3P-15
3P-14
2-2, 2-4, 1P-22,
3P-23
2-3
1P-17
1P-14, 2P-4
1-6, 3-4
2-5
2-10, 3P-15
2-3, 2-6, 2P-9,
3P-24,
3-1, 1S-3
1P-6
1S-2
2P-1
3P-19
1-6, 3-4<F>Feng, Ya
Fortner, Jacob
Fujigaya, Tsuyohiko

Fujii, Yasumaru
Fukuhara, Kengo
Fukushima, Tomohiro
Futaba, Don N.

<G>
Gao, Yanlin
Ghali, Mohsen

3P-12
2P-7
1P-24
2-8
1-9
1P-24

2P-19
3P-7
3-5, 1P-16
2P-12
1-2, 1P-14, 2P-13,
2P-17, 3P-12

2P-21
3P-19

<E>
Eda, Junko
Edo, MichikoEndo, MasanoriEndo, Takahiko<H>
Hamano, Tsuyoshi
Hamasaki, Hiromu
Hamasuna, Aoi
Harano, Koji
Hase, Muneaki
Hata, Kenji
Hatao, Shunya
Hayama, Hiro
Hayami, Shinya
Hayashi, Keita
Hayashi, Shingo
Hayashi, Tatsuhiro
Hayashi, YasuhikoHe, Jinping
He, Xing
Hibino, Hiroki- 127 -

3P-13
3P-2
3P-5
2-6, 1P-23, 2P-8,
3P-9, 3P-23, 3P-24

1-7
1-3
3-10, 1P-2,
1P-6 2P-1,
2P-5, 3P-1,
3P-6
2P-27
2P-2
2-11, 2-12
1-10, 3-5,
1P-16

1P-4,
2P-3,
3P-4,

3-12,

1P-10
2-10

1P-17
1P-5, 2P-10
3-10
1-11
2P-6
1-10, 3-5, 3-12,
1P-16, 3P-17
2-5
2P-16
2S-2
3P-4
3-1
1P-1
2P-6
3-12
1P-8
2-4

Hirahara, Kaori
Hirano, Atsushi
Hirao, Toshio
Hirokawa, Sota
Hirotani, Jun
Hisama, Kaoru
Hokazono, Shohei<I>
Ichikawa, Haruna
Ichinose, Nanami
Ichinose, Yota

1P-5, 2P-10
2P-6
1P-17
1P-22
1P-3, 1P-15, 3P-5
1-2
2P-20

Inoue, Tsukasa
Inoue, Yoku
Inukai, Daiki
Irisawa, Toshifumi
Ishiguro, Yasushi
Ishihara, Masatou
Ishihara, Yoshiaki
Ishii, Akihiro
Ishii, Satoshi
Ishii, Taiki
Ishikawa, Takahiro
Ishimaru, Saya
Ishizaka, Kyoko
Iwasa, Yoshihiro
Iwasaki, Yuya
Iwata, Kota

2P-24
3P-22
3-9, 1P-12, 2P-2,
3P-13
3P-22
1S-3
1P-7
1S-2
1-6
2P-13
1S-3
1-1
2P-6
1-6
1-3, 1-7, 1P-14,
2P-13, 2P-17, 3P-12
2-5
1P-1, 2P-11, 3P-11
2-2
1P-23, 2P-8, 3P-7
1P-24, 2P-24
3P-7
3-3
1-3
1P-17
1P-6
1P-17
3P-16
1P-9
1P-9
3-7
1S-3

<J>
Jeon, IL

1-8,

Iida, Satoshi
Iimori, Takushi
Iizumi, Yoko
Ikeda, Atsushi
Ikemoto, Hirofumi
Ikuhara, Yuichi
Imamura, Hitoshi
Inaba, Takumi
Inoue, Hirotaka
Inoue, Taichi
Inoue, Taiki

2P-4Jeon, Sugyeong
Ji, Hyun Goo

3P-10
3P-23

<K>
Kajiwara, Takashi
Kanahashi, Kaito
Kanda, Naoyuki
Kaneko, Toshiro
Kashima, Taiga
Kashio, Tatsuya
Katagishi, Daiki
Kataura, Hiromichi
Katayama, Yoshiki
Kato, Toshiaki
Kato, Yuichi
Kato, Yuichiro K.
Kauppinen, Esko I.
Kawaguchi, Atsushi
Kawahara, Kenji
Kawai, Tsuyoshi
Kawasaki, Riku
Kayo, Nana
Khozami, Mohsen
Kim, Jaeho
Kishi, Ryoichi
Kishida, Hideo
Kitada, Takahito
Kitaura, Ryo
Ko, Jeong Won
Ko, Weon Bae
Kobashi, Kazufumi
Kobayashi, Mikio
Kodama, Naoko
Kojima, Keiko
Kokubo, Ken
Komai, Takaha
Komoda, Masato
Komori, Fumio
Kondo, Riku
Konishi, Teruaki
Konno, Yui
Koyama, Takeshi
Kozawa, Daichi
Kubo, Toshitaka

1S-3
1P-12
2-3
1-5, 1P-8, 1P-18
3P-16
1P-19, 2P-18
2-9
3-8, 3P-16
2P-5
1-5, 1P-8, 1P-18
3-11
1-3, 3-6, 3P-3
1P-14, 2P-4, 2P-13
1P-15
2-2, 2-4
1P-2
1S-2
3P-1
2-10
1-10
3P-17
2-2, 2P-7
1-5
1P-23, 2P-8, 3P-22
3P-10
3P-10
3-11, 2P-14
3P-8
1P-24
1P-7
3-5
2-11, 2-12
2P-19
3-1, 1S-3
3P-21
1P-17
1P-13
2-2, 2P-7
1-3
3P-7- 128 -

Kubota, Yoshiyuki
Kumamoto, Akihito
Kusunoki, Michiko<L>Li, Henan
Li, Qin-Yi
Li, Yuexuan
Li, ZhenLim, Hong En
Lin, Hao-Sheng
Lin, Yung-Chang
Liu, Ming
Lungerich, Dominik<M>
Maeda, Taisei
Maeda, Yutaka
Magata, Soichiro
Majima, Yuki
Maniwa, Yutaka
Maruyama, Mina
Maruyama, Shigeo

Maruyama, Takahiro
Mase, Kazuhiko
Mashino, TadahikoMatsubara, Manaho
Matsuda, Hiroyuki
Matsuda, Kazunari
Matsui, Jun
Matsui, Takuya
Matsumoto, Kaisei
Matsunaga, Masahiro
Matsuo, Yoshiaki
Matsuo, Yutaka
Matsuoka, Hideki
Matsuoka, Yuya
Mazaki, Hitoshi

Mieno, Tetsu
Mitsuishi, Masaya
Miyamachi, Toshio
Miyamoto, Yoshiyuki
Miyata, Yasumitsu

3S-3
2P-13
2P-7

1-7
1P-21, 1P-22
2P-10
3P-3
2-6, 1P-23, 3P-9,
3P-24
1-8
2-4
2P-13
1-11

3-7
1P-13
2P-16
1P-9
2P-23
1-2, 1-4, 1P-10,
2P-27, 3P-23
1S-1, 1-2, 1-3,
1-7, 1-8, 1P-14,
2P-4, 2P-13, 2P-17,
3P-12
1P-19, 2P-18
1S-3
2-9
1P-12
1P-17
Turorial, 3-8,
1P-13,
2P-23, 3P-8
1P-13
1P-14
1P-3
1P-15
3P-21
1-8, 2P-4
1P-9
3-9
2P-12

Miyauchi, Yuhei
Momin, Md. Abdul
Mori, Takeshi
Morimoto, Takahiro
Morimoto, Yusuke
Moritani, Tohei
Mouri, Shinichiro
Murahashi, Tomoaki
Murai, Yuya
Murakoshi, Kei
Murayama, Mitsuhiro<N>
Nagai, Kohei
Nagai, Yukiko
Nagano, Mai
Nagashio, Kosuke
Nagata, Masa
Nagaya, Hiroki
Nakagawa, Kaito
Nakagawa, Rei
Nakagawa, Yasuto
Nakajima, Hideaki
Nakamura, Eiichi
Nakamura, Junji
Nakamura, Kenta
Nakamura, Koichi
Nakamura, Masakazu
Nakamura, Shigeo
Nakanishi, Yusuke

Nakano, Masaki
Nakano, Takayuki
Nakashima, Asato- 129 -

2P-15
1P-13
1S-3
1P-11
2-3, 2-6, 1P-23,
1P-26, 2P-8, 2P-9,
2P-23, 2P-25, 3P-9,
3P-23, 3P-24
3-8, 1P-13, 2P-23,
3P-8
2P-15
2P-5
1-1, 3-11, 2P-14
3-4
1P-20
3P-19
1P-19
1P-23, 2P-8
2-11, 2-12
1-11

3P-13
2P-5
1P-26
2-4
2-3
2P-4
1-6
2P-12, 3P-2
1P-2
2P-14
1-11
3S-1
2P-5
2-10
1-9, 3P-15
2-9
2-3, 2-6, 1P-23,
2P-9, 2P-23, 3P-9,
3P-24
2S-1, 1P-9
1P-1, 2P-11, 3P-11
1P-19, 2P-18

Nakashima, Hiroshi
Nakashima, Takuya
Nakatsuji, Kan
Nakayama, Tomohito
Naritsuka, Shigeya
Natsume, Yuhei
Nguyen, T.Hung
Niidome, Yoshiaki
Nishidome, Hiroyuki
Nishihara, Taishi
Nishina, Yuta
Nishino, Akane
Nishiyama, Wataru
Noda, Masaru
Noda, Suguru
Norimatsu, Wataru
Nouchi, Ryo
Numata, Shunsuke<O>Oda, Kaito
Ogata, Hironori
Ogura, Hiroto
Ohe, Tomoyuki
Ohno, Yuaka

2-4
1P-2
1S-3
2P-6
1P-19, 2P-18
1P-20
1P-27, 2P-26, 3P-26
1P-4, 2P-5
3P-13
3-8
2P-19
1P-13
2-4
3P-18
2P-12, 3P-2
2P-7
3-3
2P-22

Okubo, Hitomi
Okudaira, Saki
Omachi, Haruka
Osawa, Eiji
Otsuka, Keigo
Otsuka, Tomohiro

3P-6
2P-22, 3P-14
1P-23
2-9
1P-3, 1P-15, 1P-17,
3P-5, 3P-16
3P-7
3P-7
1-2, 1-4, 1P-10,
2P-27, 3P-20, 3P-23
1-9, 3P-15
1-1, 3-11, 1P-7,
2P-14
3P-13
1P-13
2-5, 1P-3
2-8
1-3, 3-6, 3P-3
1-5

<P>
Pandey, Manish
Pang, Xiaoqi
Pichler, Thomas

1-9
1P-27, 2P-26
3S-4

Okada, Mitsuhiro
Okada, Naoya
Okada, Susumu
Okamoto, Naofumi
Okazaki, Toshiya

Prato, Maurizio
Pu, Jiang<Q>
Qian, Yang

2-5
2-6, 1P-12, 2P-9,
2P-23, 3P-9

2P-13

<R>
Rahman Mohammad Jellur 2P-15<S>
Saika Bruno Kenichi
Saito, Kensuke
Saito, Mitsufumi
Saito, Riichiro

1P-9
2-2, 2P-7
2P-9
3-2, 3-7, 1P-25,
1P-27, 2P-26, 3P-26
2-1
Saito, Susumu
1-10
Sakakita, Hajime
1-10, 3-12
Sakurai, Shunsuke
2P-16
Sato, Hideki
1P-18
Sato, Naofumi
3P-12Sato, Shu
1P-16, 3-5
Sekiguchi, Atsuko
1-9
Sekimoto, Yuki
3S-4
Senga, Ryosuke
1-5Seo, Mizuki
2P-4Seo, Seungju
2-10
Shaalan, Nageh
1P-14
Shawky, Ahmed
2-3
Shiga, Takuma
2P-6
Shigeeda, Yuho
2-6, 1P-23, 2P-8,
Shimizu, Hiroshi
3P-9, 3P-24
3P-17
Shimizu, Taiyo
3P-7
Shimizu, Tetsuo
1-11
Shimizu, Toshiki
1-10
Shimizu, Yoshiki
2-3, 2-5
Shinohara, Hisanori
3P-8
Shinokita, Keisuke
1P-2, 1P-4, 2P-1,
Shiraki, Tomohiro
2P-3, 2P-5, 3P-4
1S-3
Shirasawa, Tetsuroh
Shoufie Ukhtary Muhamma 1P-25
1P-19
Soga, Tsukasa- 130 -

Solís-Fernández, Pablo
Stuckner, Joshua
Suenaga, Kazu
Sugikawa, Kouta
Sugime, Hisashi
Sugimoto, Wataru
Sundaram, Rajyashree
Suzuki, Mitsuaki
Suzuki, Satoru
Suzuki, Seiya
Syrgiannis, Zois
<T>
Tabata, Kento
Taguchi, Yuta
Takahashi, Koji
Takahashi, Kyoko
Takahashi, Togo
Takai, Kazuyuki
Takakura, Akira
Takei, Kuniharu
Takenobu, Taishi
Takimoto, Seiya
Tanaka, Koichiro
Tanaka, Kosuke
Tanaka, Naoki
Tanaka, Ryoga
Tanaka, Satoru
Tanaka, Takeshi
Tanaka, Toshihiko
Terao, Yuri
Teshima, Hideaki
Tian, Yuan
Tomita, MotohiroTomo, Yoko
Tsuji, Takashi<U>
Uchida, Kento
Uchiyama, Haruki
Ueda, Yuki
Ueji, Kan

2-4, 1P-22, 3P-23
1-11
3S-4, 2-3, 2-4
1S-2
2P-12, 3P-2
3-3
3-5, 1P-16
1P-13
1P-17
2P-21
2-5

2P-11
2-1
1P-21, 1P-22
2-9
2P-9
1P-24, 2P-24, 3P-21
3-8
1-6, 3-4
2-6, 1P-12, 2P-9,
2P-23, 3P-9
1P-5
3P-13
3P-11
3-10, 1P-6, 2P-1,
2P-5
2P-25
1S-3, 3-1
3-8, 2P-6
2-8
2-4
1P-22
1P-25
3P-6
1P-22
1-10

3P-13
1P-15, 3P-5
2P-18
3-9, 1P-12, 2P-2

Ueno, Kazuki
Ukhtary, M. Shoufie
Uotani, Ryosuke
Uwanno, Teerayut

1P-3
3-2,
1S-3
2-4

<V>
Visikovskiy, Anton
Viswanath, Pamarti

3-1, 1S-3
2P-21

<W>
Wada, Naoki
Wakabayashi, Tomonari
Wang, Pengyingkai
Wang, Sake
Wang, Tong
Wang ,YuHuang
Watanabe, Makoto
Watanabe, Takanobu
Wu, Xiaojian

2P-23
2-7
2P-17
3-2, 3-7
2P-26
1-3
2P-17
3P-6
1-3

<X>
Xiang, Rong

1-3,

<Y>
Yagi, Ryuta
Yagi, Takashi
Yaji, Koichiro
Yamada, Michio
Yamada, Takeo
Yamada, Tomoyuki
Yamaguchi, Ryohei
Yamamoto, Keisuke
Yamamoto, Takahiro
Yamashita, Daiki
Yamazaki, Satoshi
Yanagi, Kazuhiro

Yang, Mengju
Yanlin, Gao
Yokoi, Hiroyuki
Yokota, Hiroki
Yomogida, Yohei- 131 -

3-7

2P-13, 2P-17

3S-2
3-9
3-1
1P-13
3-5, 2P-14, 3P-17
2P-23
3P-6
2-4
1P-12
3P-3
1-1
2-6, 3-9, 1P-12,
1P-26, 2P-2, 2P-25,
3P-13
2P-12
3P-20
3P-25
2P-24
3-9, 1P-12, 1P-26,
2P-2, 2P-25, 3P-13

Yoshida, Akari
Yoshida, Satoshi
Yoshida, Shoji
Yoshihara, Naoki
Yoshikawa, Hirofumi
Yoshimura, Daisuke
Yoshimura, Masamichi
Yotsumoto, Satoshi
Yu, Boda<Z>
Zhang, Minfang
Zhang, Wenjin
Zhao, Yangzhou
Zheng, Liu

Zheng, Yongjia
Zhou, Ying
Zolotoukhna, Tatiana

3-9, 1P-12, 2P-2
1P-9
2P-8
3P-18
2-5
3P-23
2P-21
3P-12
2P-3

1P-7
2P-23
2P-24
2-3, 2-6, 1P-23,
2P-8, 3P-9, 2P-23,
3P-22, 3P-24
2P-13, 2P-17
2P-14
2P-20

- 132 -

」෗ࢆࡈᕼᮃࡢ᪉࡬           ࣇ࣮࣭ࣛࣞࣥࢼࣀࢳ࣮ࣗࣈ࣭ࢢࣛࣇ࢙ࣥᏛ఍࡛ࡣࠊ」෗」〇࠾ࡼࡧ㌿㍕」〇࡟ಀࡿⴭసᶒࢆᏛ⾡ⴭసᶒ༠఍࡟ጤクࡋ࡚࠸ࡲࡍࠋᙜヱ฼⏝ࢆࡈᕼᮃࡢ᪉ࡣࠊᏛ⾡ⴭసᶒ༠఍㸦https://www.jaacc.org/㸧ࡀᥦ౪ࡋ࡚࠸ࡿ」〇฼⏝チㅙࢩࢫࢸ࣒ࡶࡋࡃࡣ㌿㍕チㅙࢩࢫࢸ࣒ࢆ㏻ࡌ࡚⏦ㄳࡃࡔࡉ࠸ࠋ                                         ὀព㸸ⴭస≀ࡢᘬ⏝ࠊ⩻ヂ➼࡟㛵ࡋ࡚ࡣࠊ㸦♫㸧Ꮫ⾡ⴭసᶒ༠఍࡟ጤク⮴ࡋ࡚࠾ࡾࡲࡏࢇࠋ┤᥋ࠊࣇ࣮࣭ࣛࣞࣥࢼࣀࢳ࣮ࣗࣈ࣭ࢢࣛࣇ࢙ࣥᏛ఍࡬࠾ၥ࠸ྜࢃࡏࡃࡔࡉ࠸ࠋ 

Reprographic Reproduction outside Japan  Fullerenes, Nanotubes and Graphene Research Society authorized Japan Academic Association
For Copyright Clearance (JAC) to license our reproduction rights and reuse rights of copyrighted
works. If you wish to obtain permissions of these rights in the countries or regions outside Japan,
please refer to the homepage of JAC (http://www.jaacc.org/) and confirm appropriate organizations
to request permission.
In order to obtain permission to quote and/or translate, please contact the copyright holder directly.

2020 ᖺ 9 ᭶ 10 ᪥Ⓨ⾜➨ 59 ᅇࣇ࣮࣭ࣛࣞࣥࢼࣀࢳ࣮ࣗࣈ࣭ࢢࣛࣇ࢙ࣥ⥲ྜࢩ࣏ࣥࢪ࣒࢘
ㅮ₇せ᪨㞟ࣇ࣮࣭ࣛࣞࣥࢼࣀࢳ࣮ࣗࣈ࣭ࢢࣛࣇ࢙ࣥᏛ఍ӑӐࣇࠛ464-8601 ឡ▱┴ྡྂᒇᕷ༓✀༊୙⪁⏫
ྡྂᒇ኱Ꮫ ᮍ᮶ᮦᩱ㺃ࢩࢫࢸ࣒◊✲ᡤᮍ᮶㺃࢚ࣞࢡࢺࣟࢽࢡࢫ㞟✚◊✲ࢭࣥࢱ࣮ ኱㔝◊✲ᐊෆE-mail㸸secretariat@fntg.jp
URL㸸https://fntg.jp/jp_new/༳ๅ / 〇ᮏ ࢥࣟࢽ࣮༳ๅ
社会福祉法人 福岡コロニー

主な特徴⊡⇟∄∞⇮↙⇭⇜⇊∙↚ቇҥદ˺⊡‴⁄″⁀⁅⁁⁀ ឬ᪦ඬ∁∈⇞⇰⇊⇜∞
ɼ↙ཎᧈ‣†ᩓൢ⇎⇳∑⇔∞ⅺ↸ឬ᪦ඬਰѣ↧↝‫٭‬੭јྙⅻ‫ˌ‗‧‫‬ɥ℉‒໯ᬛ↙⇎⇳∑⇔∞∓⇟ⅻ‫ↄݱ‬ⅾ⅚‫↎ↆܭܤ‬ਰࠢⅻࢽ↸↻↺⅛․†ᡫࠝ↖↞⅚෩˳↝ᆔ᫏↚↷→↕ਰࠢⅻ‫ↆܭܤ‬ᩊⅳ⅛
℉‒வˑ⇁‫٭‬ⅷ↕↱ɟ‫↝ܭ‬ਰࠢ⇁̬↓ೞᏡⅻ↓ⅳ↕ⅳ↺⅛

‥†⇞∋∞∑≋⁩⁓⁦⁦‡⁥⁗⁕≌↚↷↺ႆਰСࣂⅻӧᏡ
℉‒⁆⁡⁦⁓⁞˴⇞∋∞∑↖ↂ↝ϼྸⅻ‫ܦ‬ʕↈ↺↗ⅳⅵऴ‫إ‬ⅻᛯ૨↚ਫ਼᠍↖ⅼ↺⅛․•⁝›⁬ឬ᪦ඬ∁∈⇞⇰⇊⇜∞‴⁄″⁀⁅⁁⁀‒⁅⁁⁀※‸※‷⁄‒⁅‸⁊․‧•„‧‧•…•⁝›⁬ឬ᪦ඬ∁∈⇞⇰⇊⇜∞‴⁄″⁀⁅⁁⁀‒⁅⁁⁀※‸※‷⁄‒⁅‸⁊‣‧•››

ɼ↙⇈⇽∐⇗∞⇝∍∙
Ў૝⇑∞∂∙⇰⇴⇧∋∞⇼ ஊೞ᫊૰ ໯ೞ᫊૰ ⇡∏∅⇩⇕ ⇡∇∙⇮ ज़ή˳ ᚡ᥵஬૰ᄬࣱብ ብ஛ϫ᣿ ᣠ҄ᤧ ᣿‫ޓ‬ᣠ҄ཋ ⇝∐⇑ ⇈∑∅⇰ ⇑∞∂∙⇼∏⇩⇕∃∐∄∞ ∏⇬⇩⇕⇟ ᙌኡ ⇻⇇∙⇭∞⇝∍∙ᄂᄶд ᩓ൷ ⇻⇉∏∞ ήᚑ‫ ۥ‬ᚑ‫ٳ˳ ∙⇧⇕∕ ۥ‬ᚮૺᕤ ഫᄶⅼብ ⇝∉∙⇽∞Ҟ‫ ˳ݰ‬ᩓ‫ؕ܇‬Ⴔ ෩୒ ᝮ᣿‫ ޓ‬᣿‫ܰ ޓ‬ჽ ⇥⇊∊ ႆᣞᓏ᫏ ↌↝˂ʐ҄⇎∄∑⇞∍∙ᙌд ᠾᕤ ⇮⇰∞ ∏⇬⇩⇕⇟ မ᩿෇ࣱд ⇕∐∞∆ ʐ෩ ↌↝˂᪥ᮏᅜෆ㈍኎⥲௦⌮ᗑᮾிᮏ♫䠖䛈㻝㻟㻢㻙㻜㻜㻣㻝㻌ᮾி㒔Ụᮾ༊டᡞ㻝㻙㻞㻤㻙㻢 䝍䝙䝡䝹㻟㻲㻌㻌ᢏ⾡≀ὶ䝉䞁䝍䞊䠖䛈㻞㻣㻞㻙㻜㻝㻠㻢㻌༓ⴥ┴ᕷᕝᕷᗈᑿ㻞㻙㻝㻙㻥㻌㻌኱㜰ᨭᗑ䠖䛈㻡㻟㻟㻙㻜㻜㻟㻝㻌኱㜰ᗓ኱㜰ᕷᮾᾷᕝ༊すῐ㊰㻝㻙㻝㻙㻟㻢㻌᪂኱㜰䝡䝹⚟ᒸႠᴗᡤ䠖
䛈㻤㻝㻞㻙㻜㻜㻝㻢㻌⚟ᒸ┴⚟ᒸᕷ༤ከ༊༤ከ㥐༡㻝㻙㻞㻙㻝㻡㻌஦ົᶵ䝡䝹ᮐᖠฟᙇᡤ䠖
䛈㻜㻜㻝㻙㻜㻥㻝㻝㻌໭ᾏ㐨ᮐᖠᕷ໭༊᪂⍆ఝ㻝㻝᮲㻝㻟㻙㻣㻙㻝㻟㻙㻞JVVRUYYYEUELREQLR㼀㻱㻸㻌㻜㻟㻙㻡㻢㻞㻣㻙㻤㻝㻡㻜㻌㻲㻭㼄㻌㻜㻟㻙㻡㻢㻞㻣㻙㻤㻝㻡㻝㼀㻱㻸㻌㻜㻠㻣㻙㻣㻜㻝㻙㻢㻝㻜㻜㻌㻲㻭㼄㻌㻜㻠㻣㻙㻣㻜㻝㻙㻢㻝㻝㻢㼀㻱㻸㻌㻜㻢㻙㻢㻟㻞㻡㻙㻟㻝㻣㻝㻌㻲㻭㼄㻌㻜㻟㻙㻢㻟㻞㻡㻙㻡㻝㻤㻜㼀㻱㻸㻌㻜㻥㻞㻙㻠㻤㻞㻙㻠㻜㻜㻜㻌㻲㻭㼄㻌㻜㻥㻞㻙㻠㻤㻞㻙㻟㻣㻥㻣㼀㻱㻸㻌㻜㻝㻝㻙㻣㻢㻠㻙㻟㻢㻝㻝㻌㻲㻭㼄㻌㻜㻝㻝㻙㻣㻢㻠㻙㻟㻢㻝㻞

GRAND ARM™ over GRAND ARM™

原子分解能分析電子顕微鏡

JEM-ARM300F 2"GRAND ARM 2"
TM

原子分解能電子顕微鏡 JEM-ARM300F
G R A N D A R M TMをさらに進化させ、低加速から高加速までさまざまな加速電圧にて、
超高空間分解能観察と高感度分析を両立させた
原子分解能分析電子顕微鏡登場！

NIRvana® HS

量子効率グラフ
100
90
80
70
60
50
40
30
20
10
0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

Wavelength (μm)

FRAME

1

FRAME

2

700 e-/p/sec<8 e-/p/sec

FRAME

3

EXPOSEEXPOSEEXPOSE

Integrate While Read (IWR) mode
for maximum duty cycle

ZZZSLMFRMS