The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

ProgramSunday, 7 August
Registration
Sunday afternoon, 7 August, 15:00
Welcome Reception
Sunday afternoon, 7 August, 18:00
Reception Hall

Monday, 8 August
Opening Ceremony
Monday morning, 8 August, 8:30
Century Hall
Plenary 1
Monday morning, 8 August, 10:17
Century Hall
10:17
Plenary Lecture (40 min)Invention of GaN p-n junction blue LEDs
Isamu Akasaki*
Meijo University and Nagoya University, Japan
Lunch
Monday morning, 8 August
Shirotori Hall
Plenary 2
Monday afternoon, 8 August, 13:50
Century Hall
13:50
Plenary Lecture (40 min)Advances in bulk crystal growth of transparent
semiconducting oxides
Zbigniew Galazka*
IKZ Berlin, Germany
Plenary 3
Monday afternoon, 8 August, 14:30
Century Hall
14:30
Plenary Lecture (40 min)
The role of nucleation in Complex Self-Assembly
Daan Frenkel*, Aleks Reinhardt, William M. Jacobs
University of Cambridge, UKAward 1
Monday afternoon, 8 August, 15:10
Century Hall
15:10
IOCG Award Lecture (30 min)[Laudise Prize Lecture]
The Emergence of High-performance

Multi-crystalline Silicon in Photovoltaics
C.W. Lan1 *, M. Yang2, A. Yu2, B. Hsu2, C. Hsu2, A.
Yang3
1National Taiwan University, Taiwan, 2Sino-Aemerican
Silicon Products Inc., Taiwan, 3 Solartech Energy Inc.,
TaiwanAward 2
Monday afternoon, 8 August, 15:40
Century Hall
15:40
IOCG Award Lecture (30 min)[Shieber Prize Lecture]
Calcium sulfate crystallization: from construction
material to natural world wonder
A. E. S. Van Driessche*
Univ. Grenoble Alpes, CNRS, ISTerre, France
Coffee break
Monday afternoon, 8 August, 16:10
Event Hall
Session Mo1
Monday afternoon, 8 August, 16:40
G01, G02, G03, G04, G07, G08, G10, T07, T09

Mo1-G01
Fundamentals of Nucleation and Crystal Growth
Room: Oral 6
16:40
Mo1-G01-1
Invited oral (25 min)A holistic picture of non-classical nucleation andgrowth processes
J. J. De Yoreo 1, 2 *1
Pacific Northwest National Laboratory, USA,
2
University of Washington, USA
17:05
Mo1-G01-2 Invited oral (25 min)
In Situ Imaging of 2D and 3D Crystal Nucleationfrom Liquids
K. Tsukamoto1, Y. Kimura2
1
Osaka University/Tohoku University, Japan, 2Hokkaido
University, Japan
17:30
Mo1-G01-3
Oral (15 min)Why is two-step nucleation selected?
M. A. Vorontsova1, L. Filobelo, P. G. Vekilov1, 2 *1
Department of Chemical and Biomolecular Engineering,2
Department of Chemistry, University of Houston, USA
17:45
Mo1-G01-4
Oral (15 min)
Undercooling measurement and nucleation study inlevitated or sessile silicon droplets
T. Duffar*, M. Tsoutsouva, M. Beaudhuin, K. Zaidat
SIMAP-EPM, France
18:00
Mo1-G01-5
Oral (15 min)Two-dimensional nucleation of colloidal crystals
added with polymer
J. Nozawa*, S. Guo, S. Hu, H. Koizumi, S. Uda
Tohoku University, Japan
18:15
Mo1-G01-6
Oral (15 min)
The effect of oscillatory flow on nucleation and grain
growth in the undercooled melt melt

1

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
M. Chen1 *, J. Mi1, Z. Wang2
1
School of Mathematics and Physics, 2School ofMaterials Science and Engineering, University of
Science and Technology Beijing, China
18:30
Mo1-G01-7
Oral (15 min)Determination of nucleation kinetics and opticalproperties of semi- organic NLO single
crystal-sodium acid phthalate
S. Chandran*, R. Paulraj, P. Ramasamy
SSN College of Engineering, India

Mo1-G02
Surfaces and Interfaces
Room: Oral 3
16:40
Mo1-G02-1
Invited oral (25 min)Classical and two-step nucleation of glucose
isomerase
D. Maes1 *, M.Sleutel1, J. Lutsko2, M.A. Vorontsova3, P.
G. Vekilov3
1
Vrije Universiteit Brussel, Belgium, 2Université Libre deBruxelles, Belgium, 3University of Houston, USA
17:05
Mo1-G02-2
Oral (15 min)Heterogeneous Crystal Growth on Seed Particle byMolecular Dynamics
D. Suh*, K. Yasuoka
Keio University, Japan
17:20
Mo1-G02-3 Oral (15 min)Numerical Simulation of Crystal Growth Hysteresis
H. Miura*
Nagoya City University, Japan
17:35
Mo1-G02-4
Oral (15 min)
Kink Energies of Si(111) (1x1) Surface: Lattice Model
Analysis Combined with LEEM Observation
N. Akutsu*
Osaka Electro-Communication University, Japan
17:50
Mo1-G02-5 Oral (15 min)
An Enhanced Facet Determination Scheme
M. E.A. Reivinen*, E.-M. Salonen
Aalto University, Finland
18:05
Mo1-G02-6
Oral (15 min)Crystal Habits Prediction of LiNi0.5Mn1.5O4 Systemusing Ab initio DFT Calculations
H. Shiiba1 *, N. Zettsu1, 2, K. Teshima1, 2
1Faculty of Engineering, 2Center for Energy andEnvironmental Science, Shinshu University, Japan
18:20
Mo1-G02-7
Oral (15 min)
Theoretical study to predict crystal morphology foraxis-symmetric crystals during the Kyropoulos
growth process
G. Sen*, H. Lu, Y. Malier, T. Duffar
SIMAP-EPM, France

Mo1-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
Room: Oral 2
16:40
Mo1-G03-1
Invited oral (25 min)Size-, Defect- and Disorder-mediated Quantum
Confinement Phenomena in GaAs-based Nanowires

B. Loitsch1, N. Jeon2, M. Müller3, F. Bertram3, J.
Christen3, L. J. Lauhon2, J. J. Finley1, G. Koblmüller1 *1
TU Munich, Germany, 2Northwestern University, USA,3
Otto-von-Guericke University Magdeburg, Germany
17:05
Mo1-G03-2
Invited oral (25 min)
III-V semiconductor nanowire hetero-epitaxy on Si,
Ge, poly-Si and graphene
T. Fukui*, K. Tomioka
Hokkaido University, Japan
17:30
Mo1-G03-3
Oral (15 min)Growth of InGaAs/GaAs nanowire-quantum dots on
AlGaAs/GaAs distributed Bragg reflectors for laser
applications
J. Tatebayashi1 *, S. Kako1, 2, J. Ho2, Y. Ota1, S.
Iwamoto1, 2, Y. Arakawa1, 2
1
NanoQUINE, 2IIS, the University of Tokyo, Japan
17:45
Mo1-G03-4
Oral (15 min)Selective-area growth of InGaAs-based
core-multishell nanowires on Si(111) withmodulation-doped layer toward tunnel FETs
K. Tomioka*, F. Ishizaka, J. Motohisa, T. Fukui
Hokkaido University, Japan
18:00
Mo1-G03-5
Oral (15 min)Radial nanowire light-emitting diodes in the AlGaInP
material system
A. Berg1 *, S. Yazdi2, 3, A. Nowzari1, K. Storm1, V.
Jain1,4, N. Vainorius1, L. Samuelson1, J. B. Wagner2,
M. T. Borgström1
1Lund University, Sweden, 2Technical University ofDenmark, Denmark, 3Rice University, USA, 4Halmstad
University, Sweden
18:15
Mo1-G03-6 Oral (15 min)Influence of indium supply on Au-catalyzed InGaAs
nanowire growth studied by in situ X-ray diffraction
T. Sasaki*, M. Takahasi
National Institutes for Quantum and Radiological
Science and Technology, Japan

Mo1-G04
Thin Films and Epitaxial Growth
Room: Oral 4
16:40
Mo1-G04-1
Invited oral (25 min)Control of Macrostep Structure for High-Quality SiC
Grown by Liquid Phase Epitaxy
T. Ujihara1, 2 *, C. Zhu2, K. Murayama2, S. Harada1, 2, M.
Tagawa1, 2
1
IMaSS, 2Department of Materials Science andEngineering, Nagoya University, Japan
17:05
Mo1-G04-2
Oral (15 min)Growth conditions to stabilize both non-equivalentpolar faces, c+ and c-, of KTiOPO4 crystals
A. Peña1,2 *, B. Ménaert1,2, J. Debray1,2, B. Boulanger1,2
1
Univ. Grenoble Alpes, France, 2CNRS, France
17:20
Mo1-G04-3
Oral (15 min)
Diffusion-limited vs. kinetics-limited regimes of stepbunching: How to distinguish in between?
V. Tonchev*
Institute of Physical Chemistry, Bulgarian Academy of
Sciences, Bulgaria

2The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
17:35
Mo1-G04-4
Oral (15 min)Increase in Silicon Film Deposition Rate in a
SiHCl3-SiHx-H2 System
A. Saito, A. Yamada, A. Sakurai, H. Habuka*
Yokohama National University, Japan
17:50
Mo1-G04-5
Oral (15 min)Large Orbital Moment Contribution to theSpin-Orbit Coupling Induced by the Strong
Pseudomorphism in the Co/Pd superlattice
S. Kim1,2*, S. Jekal3, S.-H. Park4,5, S. Lee1, H. H. Lee4,
H.-K. Lee4, S. H. Rhim3, J.-H. Park5, S. C. Hong3, J.
Hong1
1
Yonsei University, Korea, 2Kyoto University, Japan,
3
University of Ulsan, Korea, 4Pohang Acceleration
Laboratory, Korea, 5Pohang University of Science andTechnology, Korea
18:05
Mo1-G04-6 Oral (15 min)The Study on Hydrogen Sulfide Plasma-Etching
Endpoint in Molybdenum Disulfide Synthesis
M. Kim1, C. Ahn2,3, J. Son4, T. Kim1,2,4*
1
School of Mechanical Engineering, 2Center for Human
Interface Nano Technology, 3SKKU Advanced Instituteof Nanotechnology (SAINT), 4Department ofConvergence Mechanical Engineering, Sungkyunkwan
University, Korea
18:20
Mo1-G04-7 Oral (15 min)Growth of {110}-oriented Perovskite-type Proton
Conductive Oxide Thin Films by RF Magnetron
Sputtering Method
T. Sato1,2 *, T. Kiguchi3, T.J. Konno3, J. Kimura4, D.
Ichinose2,4, T. Mimura4, H. Funakubo2,4, K. Uchiyama1
1
National Institute of Technology, Tsuruoka College,
Japan, 2Tokyo Institute of Technology/School ofMaterials and Chemical Technology, Japan, 3Tohoku
University, Japan, 4Tokyo Institute of Technology/Dept.
of Innovative and Engineered Material, Japan
18:35
Mo1-G04-8 Oral (15 min)Synthesis of Wafer Scale Molybdenum Oxide (MoO 3)
using PECVD for Flexible Gas Sensor Application
J. Son1, C. Ahn2, H.-U Kim2, G. Park3, G. Kim3, H. Sin3,
T. Kim2,3
1
Department of Convergence Mechanical Engineering,
2
SKKU Advanced Institute of Nanotechnology (SAINT),
3
School of Mechanical Engineering, Sungkyunkwan
University, Korea

Mo1-G07
Defect Formation
Room: Oral 5
16:40
Mo1-G07-1
Invited oral (25 min)
Ab Initio Calculation and Simulation of Vacancy V n
and Vacancy Oxygen VnOm Clustering in Silicon
G. Kissinger1 *, J. Dabrowski1, T. Sinno2, Y. Yang2, D.
Kot1, A. Sattler3
1
IHP, Germany, 2University of Pennsylvania, USA,
3
Siltronic AG, Germany
17:05
Mo1-G07-2
Invited oral (25 min)
Grain boundaries in silicon crystals: Crystallographic
interaction and dislocation generation during crystal

growthK. Kutsukake*, Y. Ohno, M. Deura, I. Yonenaga
Tohoku University, Japan
17:30
Mo1-G07-3
Oral (15 min)Observations of interstitial Si atoms to be generated
during pulling stop for a long time on CZ Si crystal
growthT. Abe1 *, T. Takahasi1, K. Shirai2
1
Shin-Etsu Handotai, Japan, 2Osaka University, Japan
17:45
Mo1-G07-4
Oral (15 min)Analysis of the V/G criterion governing criticalpoint-defect concentrations in silicon single crystal
growthF. Dupret1, 2 *1
FEMAG S. A., Belgium, 2Universite catholique deLouvain, Belgium
18:00
Mo1-G07-5
Oral (15 min)Numerical study of microdefect formation during Cz
growth of monocrystalline silicon
V.M. Mamedov*, V. Kalaev
STR Group Inc., Russia
18:15
Mo1-G07-6 Oral (15 min)Impact of grain boundary structures on trapping iron
O. Al-Ani* J. P. Goss, M. l-Hadidi, P. R. Briddon, M. J.
Rayson, N. E. B. Cowern
Newcastle University, UK

Mo1-G08
Advanced Growth Technologies
Room: Oral 7
16:40
Mo1-G08-1
Invited oral (25 min)
A novel class of multiferroic single crystals:
Bi4Ti3O12·nBiFeO3
H. Zhao*, Z. Ma, K. Cai, Z. Huang
Wuhan Institute of Technology, China
17:05
Mo1-G08-2
Invited oral (25 min)Crystal Growth of BiFeO3 using Laser-Diode-HeatedFloating Zone (LDFZ) Technique and Physical
Properties of the Crystals
T. Ito*, T. Ushiyama, Y. Ozaki and Y. Tomioka
National Institute of Advanced Industrial Science andTechnology (AIST), Japan
17:30
Mo1-G08-3
Oral (15 min)
Local electromechanical and magnetic properties ofmultiferroic Bi0.9La0.1FeO3 thin film
T. Jia1 *, H. Kimura1,*, Z. Cheng2, H. Zhao3
1National Institute for Materials Science, Japan,
2
University of Wollongong, Australia, 3Wuhan Instituteof Technology, China
17:45
Mo1-G08-4
Oral (15 min)Stain Engineering for Novel Multiferroic Materials
Z. Cheng1 *, F. Hong1, H. Kimura2, K. Ozawa2
1
University of Wollongong, Australia, 2National Institutefor Materials Science, Japan
18:00
Mo1-G08-5
Oral (15 min)Optical Floating Zone Growth and Optical Propertiesof near-3:2 Mullite Crystal and Cr:Mullite Crystals
Y. Jiang*, C. Zhang, Y. Ma
Beijing University of Technology, China

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The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
18:15
Mo1-G08-6 Oral (15 min)Growth of magnesium tantalate crystals by the
micro-pulling down technique
Y. Ma1,2 *, D. Smiadak1,3, D. Perrodin1, G. Bizarri1, E.
Bourret1
1
Lawrence Berkeley National Laboratory, University ofCalifornia, USA, 2Beijing University of Technology,
China, 3Michigan State University, USA
18:30
Mo1-G08-7 Oral (15 min)Growth of Iridium and Platinum fiber crystals fromthe melt by micro-pulling-down method
Y. Yokota1 *, K. Tanaka2, C. Sugawara2, K. Sakairi2, Y.
Ohashi3, S. Kurosawa1, K. Kamada1,4, A. Yoshikawa1,3,4
1
NICHe, Tohoku University, Japan, 2Tanaka Kikinzoku
Kogyo Corporation, Japan, 3Institute for Materials
Research, Tohoku University, Japan, 4C&A Corporation,
Japan

Mo1-G10External Fields, Microgravity
Room: Oral 8
16:40
Mo1-G10-1
Invited oral (25 min)Bridgman Growth of Germanium andGermanium-Silicon Crystals under Microgravity
A. Cröll1 *, A. Hess1, J. Zähringer1, T. Sorgenfrei1, A
Egorov2, A. Senchenkov2, K. Mazuruk3, M. Volz4
1
University of Freiburg, Germany, 2NIISK, Russia,
3
University of Alabama in Huntsville, USA, 4NASA
MSFC, USA
17:05
Mo1-G10-2
Oral (15 min)Detached Melt and Vapor Growth of InI in SUBSA
Hardware
A. G. Ostrogorsky1 *, V. Riabov1, M. P. Volz2, L. vanden Berg3, A. Cröll4
1
Illinois Institute of Technology, USA, 2NASA MSFC,
USA, 3Constellation Technology Largo Florida, USA,
4
University of Freiburg, Germany
17:20
Mo1-G10-3
Oral (15 min)Particle incorporation during solidification of silicon
under microgravity
J. Friedrich1 *, T. Jauß2, A. Cröll2, T. Sorgenfrei2, C.
Reimann1, Y. Tao3, J.J. Derby3
1
Fraunhofer IISB, Germany, 2University of Freiburg,
Germany, 3University of Minnesota, U.S.A
17:35
Mo1-G10-4
Oral (15 min)Electromagnetic Levitation Method for Silicon
Purification
S. Favre1,2 *, I. Nuta1,2, G. Chichignoud1,2, K. Zaïdat1, C.
Chatillon1,2
1
Univ. Grenoble Alpes, France, 2CNRS, SIMAP, France
17:50
Mo1-G10-5
Oral (15 min)
Optimization of TMF driven directional solidificationof silicon by artificial intelligence
N. Dropka*, F.-M. Kiessling
Leibniz-Institute for Crystal Growth (IKZ), Germany
18:05
Mo1-G10-6 Oral (15 min)Influence of travelling magnetic fields on the
distribution of oxygen in the directional solidification
process for multi-crystalline silicon ingots

Y. Shao*, Z. Li, L. J. Liu
Xi’an Jiaotong University, China

Mo1-T07
Materials for Electron Devices
Room: Oral 9
16:40
Mo1-T07-1
Invited oral (25 min)Advanced In-situ Monitoring of Nitride-based
Epitaxy
F. Brunner*
Ferdinand-Braun-Institut, Leibniz-Institut für
Höchstfrequenztechnik, Germany
17:05
Mo1-T07-2
Invited oral (25 min)Metalorganic Vapor-Phase Epitaxy of
InGaAs/GaAsP Quantum Wells and Wires forHigh-Efficiency Photovoltaic Applications
M. Sugiyama1 *, T. Kasidit1, H. Fujii1, H. Cho1, H.
Sodabanlu2, K. Watanabe2, Y. Nakano2
1
Department of EEIS, The University of Tokyo, Japan,
2
Research Center for Advanced Science and Technology,
The University of Tokyo, Japan
17:30
Mo1-T07-3
Oral (15 min)
Importance of Growth Pressure on Achieving High
Quality InAlN/GaN Heterostructures by Pulsed
Metal Organic Chemical Vapor Deposition
J. S. Xue*, J. C. Zhang, Y. Hao
Xidian University, China
17:45
Mo1-T07-4
Oral (15 min)First Principles Investigation of AlGaN/SiC(0001)
Band Offset
E. Kojima1 *, K. Endo1, H. Shirakawa1, M. Araidai2,1, Y.
Ebihara3, T. Kanemura3, S. Onda3, K. Shiraishi2,11Graduate School of Engineering, 2Institute of Materials
and Systems for Sustainability, Nagoya University,
Japan, 3Denso Corporation, Japan
18:00
Mo1-T07-5
Oral (15 min)Characteristics of Reactively Sputtered Sc xAl1-xN
films on ST-X Quartz for Surface Acoustic Wave
devicesW. J. Liauh1 *, S. Wu2, J.-L. Huang1,3,4, D.-F. Lii5, W.-K.
Yeh6,7, Z.-X. Lin2, Y.-H. Chen1
1
Department of Materials Science and Engineering,
National Cheng Kung University, Taiwan, 2Tung-Fang
Design Institute, Taiwan, 3Department of Chemical andMaterials Engineering, National University ofKaohsiung, Taiwan, 4Center for Micro/Nano Science andTechnology, National Cheng Kung University, Taiwan
5Cheng Shiu University, Taiwan, 6Department ofElectrical Engineering, National University ofKaohsiung, Taiwan, 7National Nano Device
Laboratories, Taiwan
18:15
Mo1-T07-6
Oral (15 min)
The p-n junction, Schottky diode and MOS
fabrication on substrates of the detached crystals
grown by VDS to operate at ambient Temperature
D. Gadkari1 *, D. Maske2, M. Deshpande3, B. M. Arora4
1
Mithibai College, India, 2Ruparel College, India, 3Jai
Hind College, India, 4I. I. T., India

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The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Mo1-T09
Nitride Semiconductors
Room: Oral 1
16:40
Mo1-T09-1
Invited oral (25 min)Ammonothermal growth of GaN crystals in basic
environment
M. Zając*, R. Kucharski
Ammono, Poland
17:05
Mo1-T09-2
Invited oral (25 min)Growth of bulk GaN crystal by acidic
ammonothermal
Y. Mikawa1 *, Y. Kagamitani2, T. Ishinabe2, T.
Mochizuki1, A. Kojima1, H. Fujisawa1
Mitsubishi Chemical Corporation, 1Ushiku, Ibaraki,
2
Kurashiki, Okayama, Japan
17:30
Mo1-T09-3
Oral (15 min)Characterization of helical dislocations inammonothermal GaN substrate by heat treatment
K. Horibuchi*, S. Yamaguchi, Y. Kimoto, K. Nishikawa,T. KachiToyota Central R&D Labs., Inc., Japan
17:45
Mo1-T09-4
Oral (15 min)Detailed study of homoepitaxial HVPE-GaN growthin the c-direction
B. Lucznik1,2 *, M. Amilusik1,2, T. Sochacki1,2, M.
Iwinska1, M. Fijalkowski1, I. Grzegory1, M. Bockowski1
1
Institute of High Pressure Physics PAS, Poland,
2
TopGaN Sp z o.o., Poland
18:00
Mo1-T09-5
Oral (15 min)Numerical analysis of dislocation density and residual
stress in a GaN single crystal during the coolingprocess
S. Nakano*, B. Gao, K. Kakimoto
RIAM, Kyushu University, Japan
18:15
Mo1-T09-6
Oral (15 min)Surface supersaturation in flow-rate modulation
epitaxy of GaN
T. Akasaka*, C. H. Lin, H. Yamamoto, K. Kumakura
NTT Basic Research Laboratories, Japan
18:30
Mo1-T09-7
Oral (15 min)Formation of 2D structures during GaN(000-1)
surface evolution
F. Krzyżewski*, M. A. Załuska-Kotur
Polish Academy of Sciences, Institute of Physics, Poland
18:45
Mo1-T09-8
Oral (15 min)Intrasurface Electron Transition Contribution toAdsorption Energy at Semiconductor Surfaces - Basic
Mechanism and Consequences
S. Krukowski*, P. Kempisty, P. Strak, K. Sakowski
Institute of High Pressure Physics, Polish Academy of
Sciences, Poland
Poster 1
Monday afternoon, 8 August, 18:40
Event Hall
G01, G02, G03, G04, G07, G08, T07

MoP-G01

Fundamentals of Nucleation and Crystal Growth
18:40
MoP-G01-1 Poster (120 min)
Understanding The Nucleation and Growth
Mechanisms of Calcium Oxalate in Aqueous Solution
by Computer Simulation
W. Zhao*, R. Demichelis, P. Raiteri, J. D. Gale
Curtin University, Australia.
18:40
MoP-G01-2 Poster (120 min)Synthesis, structure, crystal growth andcharacterization of a new cadmium halide complex
with 4-hydroxy-L-proline
K. Boopathi1, 2*, P. Ramasamy2, R. Gopalakrishanan1
1Anna University, India, 2SSN College of Engineering,
India
18:40
MoP-G01-3 Poster (120 min)The deuterium content measurement of DKDP and
DADP crystals by using neutron diffraction
F. Liu1,2, M. Xu1, L. Zhang1, S. Wang1, B. Liu1,2, Z.
Wang1, X. Xu1, X. Sun1 *1Shandong University, China, 2Institute of Nuclear
Physics and Chemistry, China Academy of Engineering
Physics, China
18:40
MoP-G01-4 Poster (120 min)
Grain refinement and mechanical properties of
Ti-Mo alloy scraps prepared by adding Si element
J.-M. Oh, J.-W. Lim*
Chonbuk National University, Korea
18:40
MoP-G01-6 Poster (120 min)Crystal growth and physical properties of
KTexTi1-xOPO4
J. Li*, Q. Yao, J. Y. Zhang, J. Y. Wang
Shandong University, China
18:40
MoP-G01-7
Poster (120 min)Crystal growth, nucleation kinetics and opticalcharacterization of lithium hydrogen oxalatemonohydrate single crystal
S. Chandran*, R. Paulraj, P. Ramasamy
SSN College of Engineering, India
18:40
MoP-G01-8
Poster (120 min)Effect of the Roughening Transition on the Vicinal
Surface in the Step Droplet Zone
N. Akutsu
Osaka Electro-Communication University, Japan
18:40
MoP-G01-9 Poster (120 min)
Theoretical investigations of structure, elastic
properties of ZnXP2 (X=Si, Ge, Sn) chalcopyrite
semiconductors: Pressure effect
H. Liu1,2 *, B. Zhao1, S. Zhu1, Z. He1, B. Chen1, J.
Xiao1,W. Huang1, L. Xie3
1
Sichuan University, China, 2Chengdu University ofTraditional Chinese Medicine, China, 3Sichuan Normal
University, China
18:40
MoP-G01-10 Poster (120 min)Crystal growth, structural, spectral, thermal, opticaland electrical properties of potential material:
4-N,N-dimethylamino 4’-N’-methylstilbozolium 4hydroxybenzenesulfonate
I. Md. Zahid1*, S. Kalaiyarasi1, M. K. Kumar2, P. Pandi3,
R. M. Kumar1

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The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
1

Presidency College, India, 2Kalasalingam University,
India, 3Panimalar Engineering College, India
18:40
MoP-G01-11 Poster (120 min)Growth, structural, spectral and third-ordernonlinear optical properties of Piperidinium
3-carboxy-4-hydroxybenzenesulfonate single crystal
S. Kalaiyarasi*, I. Md Zahid, S. R. Devi, B. M.
Sornamurthy, R. M. Kumar
Presidency College, India.
18:40
MoP-G01-12 Poster (120 min)Precrystalline Aggregates Enable Control overOrganic Crystallization in Solution
H. Weissman1 *, C. Shahar1, S. Dutta1, L. J. W. Shimon2,
H. Ott3, B. Rybtchinski1
1
Department of Organic Chemistry, 2Department ofChemical Research Support, Weizmann Institute of
Science, Israel, 3Bruker AXS GmbH, Germany
18:40
MoP-G01-13 Poster (120 min)Studies of the Structural, Optical, Thermal andDielectric Properties of Solution grown
4-methylpyridinium 4-nitrophenolate single crystal
S. R. Devi*, S. Suresh, P. Rekha, R. M. Kumar
Presidency College, India
18:40
MoP-G01-14 Poster (120 min)
Oxygen vacancy-induces abnormal dielectric
property in new single crystal LiNbMoO6
Z. Wang*, Z. L. Gao, Y. X. Sun, X. T. Tao
Shandong University, China
18:40
MoP-G01-15 Poster (120 min)The dodecagonal pyramid structure on substrateutilized for Hydride Vapor Phase Epitaxy growth
free-standing GaN
Y. Shao*, X. Hao, Y. Wu
Shandong University, China
18:40
MoP-G01-16 Poster (120 min)Monte Carlo study of the growth rate and V/III flux
ratio dependences of Ga surface diffusion during
MBE of GaAs
O. A. Ageev, M. S. Solodovnik, S. V. Balakirev*, M. M.
Eremenko, I. A. Mikhaylin
Southern Federal University, Russia
18:40
MoP-G01-17 Poster (120 min)
Kinetic Monte Carlo Simulations and In-Situ X-ray
Studies of GaN Vapor Phase Epitaxy
D. Xu1, E. Perret1,2, M. J. Highland1, G. Ju1, P. H.3 Fuoss1,
P. Zapol1, G. B. Stephenson1, Carol Thompson3 *1
Argonne National Laboratory, USA, 2University of
Fribourg, Switzerland, 3Northern Illinois University,
USA
18:40
MoP-G01-18 Poster (120 min)Effect of Direction of External Force on
Crystallization of Colloidal Particles in a V-Groove in
Sedimentation
M. Sato*Kanazawa University, Japan
18:40
MoP-G01-19 Poster (120 min)Non-isothermal crystallization behaviors ofsupercooled water in monodisperse W/O emulsion
T. Nishizaki1 *, K. Yamane1, S. Iwamoto2, M.

Peanparkdee3, Y. Teramoto2, R. Yamauchi2
Graduate School of Applied Biological Sciences,
2
Faculty of Applied Biological Sciences, 3Division of
Science of Biological Resources, Gifu University, Japan
18:40
MoP-G01-20 Poster (120 min)Crystallization Kinetics during Rapid Solidificationof Si-0.5 at% Sn
K. Kuribayashi1,2,3 *, S. Ozawa2, K. Nagayama3, Y.
Inatomi1
1
ISAS/JAXA, Japan, 2Chiba Institute of Technology,
Japan, 3Shibaura Institute of Technology, Japan
18:40
MoP-G01-21 Poster (120 min)Parallel banded structures formed by synchronized
growth of helical crystals in a polymer matrix
S. Mizue1 *, S. Ibaraki1, Y. Oaki1, G. Sazaki2, H. Imai1
1
Keio University, Japan, 2Hokkaido University, Japan
18:40
MoP-G01-22 Poster (120 min)Specific Surface Free Energy and Roughening
Transition of Sodium Chloride Single Crystal
R. Maruyama*, A. Tsukagoshi, T. Suzuki
Shinshu University, Japan
18:40
MoP-G01-23 Poster (120 min)Size Controlled Preparation of CdTe Nanoparticles
by Apoferritin
P. Shasha*, J. H. Kim, S. J. Park
Gachon University, Korea
18:40
MoP-G01-24 Poster (120 min)Analysis of γ-to-α Transformation in Fe-C-Mn
Ternary Alloy by Multi-Phase-Field Simulation
Coupled with CALPHAD Database
T. Kohtake1,2 *, M. Segawa2, A. Yamanaka2
1
Nippon Steel & Sumitomo Metal Corporation, Japan,
2
Tokyo University of Agriculture and Technology, Japan
18:40
MoP-G01-25 Poster (120 min)Crystal Growth and Characterization of 7 mol%
Neodymium Doped BiFeO3 Multiferroic Crystals
P.-Y. Chen1 *, C.-S. Chen2, C.-Y. Lin3, Y.-S. Wu1, C.-S.
Tu3
1Ming Chi University of Technology, Taiwan, 2Hwa Hsia
University of Technology, Taiwan, 3Fu Jen Catholic
University, Taiwan
18:40
MoP-G01-26 Poster (120 min)Effect of chiral impurities on the chirality conversion
by grinding
H. Katsuno1 *, M. Uwaha2
1
Ritsumeikan University, Japan, 2Nagoya University,
Japan
18:40
MoP-G01-27 Poster (120 min)Computational investigation of the onset of
nucleation by the anharmonic downward distortion
following method
J. Kawano1 *, S. Maeda2, T. Nagai1
1Department of Earth and Planetary Sciences,2
Department of Chemistry, Hokkaido University, Japan
18:40
MoP-G01-28 Poster (120 min)Crystal lattice structure of two components of DNA
nano particles on a substrate
Y. Maegawa1, H. Katsuno2 *, M. Sato3
1
Graduate School of Natural Science and Technology,
16The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Kanazawa University, Japan, 2Ritsumeikan University,
Japan, 3Information Media Center, Kanazawa University,
Japan
18:40
MoP-G01-29 Poster (120 min)Selective incorporation at step edges: a new growthmechanism of a solid solution
K. Matsumoto-Katsuno1 *, T. Irisawa2, M. Kitamura3
1
Seikei University, Japan, 2Gakushuin University, Japan,
3
Kyoto University, Japan
18:40
MoP-G01-30 Poster (120 min)Heterogenous nucleation in a groove between rod
dendrites with an apex and iso-curvature lateralsurfaceQ.-L. Liu*, X.-M. Li
Kunming University of Science and Technology, China
18:40
MoP-G01-31 Poster (120 min)Interstitial Fe-pairs in silicon
O. A. Al-Ani*, J. P. Goss, P. R. Briddon, M. J. Rayson,
N. E. B. Cowern
Newcastle University, UK
18:40
MoP-G01-32 Poster (120 min)
Kinetics of solution crystal growth of strengite,
FePO4,2H2O
H. E. L. Madsen*
University of Copenhagen, Denmark
18:40
MoP-G01-33 Poster (120 min)
The Epitaxy of GaN Nanowires Grown on Si from
Reactive Metal Catalysts
K. L. Wu*, C. C. Su, Y. Chou, W. I. Lee and Y. C. Chou
National Chiao Tung University, Taiwan
18:40
MoP-G01-34 Poster (120 min)Morphology and crystal growth of copper sulfate
pentahydrate
T. Shinohara1, S. Yamamura1, K. Kamiya1, Y. Sugawara1*, M. Ootaki2, N. Matsumoto2
1
Kitasato University, Japan, 2St. Marianna University
School of Medicine, Japan
18:40
MoP-G01-35 Poster (120 min)Nucleation studies on potassium succinate succinicacid (KSSA) single crystal
P. Rajesh1 *, S. Rama1, A. Arunkumar1, R. Sivasankari1,
P. Ramasamy2
1Agni College of Technology, India, 2SSN College ofEngineering, India
In this abstract the nucleation parameters of potassium
succinate - succinic acid crystal (KSSA) were evaluatedusing Density functional theory and classical Nucleation
theory.
18:40
MoP-G01-36 Poster (120 min)Investigation on nucleation kinetics, growth andcharacterization of urea oxalic acid –ferroelectric
single crystal
R. Dhivya, D. R. Babu, R. E. Vizhi*
VIT University, India
18:40
MoP-G01-37 Poster (120 min)Growth of Ga-rich and Ga,Ge-rich tourmaline
crystals in hydrothermal solutions
T. V. Setkova1 *, V. S. Balitsky1, D. V. Balitsky2
1
Institute of Experimental Mineralogy Russian Academyof Science, Russia, 2Balitsky Consultancy, France
18:40
MoP-G01-38 Poster (120 min)Morphologic Control of BaNbO2N Crystals Using
Flux Grown Precursor Crystals and Their
Photocatalytic Properties Response to Visible LightT. Yamada1 *, Y. Murata2, K. Teshima1,3
1Center for Energy and Environmental Science,2
Graduate School of Science and Engineering, 3Facultyof Engineering, Shinshu University, Japan
18:40
MoP-G01-39 Poster (120 min)Influence of Li-doped CaCO3 on Conversion of
Li2CO3 to LiOH
B. Yuan1,2 *, J. Shi2, M.-G. Yi1, L. Xiang2
1
Sichuan University, China, 2Tsinghua University, China
18:40
MoP-G01-40 Poster (120 min)*Late
News
Understanding of Crystallization and Growth of
LiB3O5 crystal in the MoO3-based high-temperature
solution at the Molecular Level†
D. Wang1 *, D. Zhang2, J. Zhang2, S. Liu3, Y. Yue3, G.
Zhang3, Z. Hu3, S. Yin2, P. Fu3, J. Yu4, M. Wang1
1
Nanjing University, China, 2Anhui Institute of Optics
and Fine Mechanics, Chinese Academy of Science,
China, 3Technical Institute of Physics and Chemistry ofChinese Academy of Science, China, 4Shanghai
University, China

MoP-G02
Surfaces and Interfaces
18:40
MoP-G02-1 Poster (120 min)Influence of Mn addition on precipitation and pitting
corrosion of 19%Cr economical duplex stainless steel
with aging at 800℃
Y. Yang*, Y. Bai
Kunming University of Science and Technology, China
18:40
MoP-G02-2 Poster (120 min)An ab initio approach for stability of polar GaN/SiC
and AlN/SiC interfaces
T. Akiyama*, H. Nakane, K. Nakamura, T. Ito
Mie University, Japan
18:40
MoP-G02-3 Poster (120 min)Interaction forces between two calcite surfaces
as a function of fluid composition
S. Javadi1,2 *, A. Røyne1
1
Oslo University, Norway, 2Stavanger University,
Norway18:40
MoP-G02-4 Poster (120 min)Growth and Shrinkage of Microbubbles in
Water-Alcohol Mixture generated by Photoexcitationof Gold Nanoparticles
S. Yanagiya*, A. Yoshida, A. Furube
University of Tokushima, Japan
18:40
MoP-G02-5 Poster (120 min)
Structures and stability of polar GaN thin films on
ScAlMgO4 substrate: an ab initio-based study
H. Nakane*, T. Akiyama, K. Nakamura, T. Ito
Mie University, Japan
18:40
MoP-G02-6 Poster (120 min)Growth morphology of flux-synthesized La4Ti3O12

7

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
particles
A.Orum1 *, K. Takatori2, S. Hori2, T. Ikeda1, M.
Yoshimura1, T. Tani1,2
1
Toyota Technological Institute, Japan, 2Toyota Central
Research and Development Laboratories, Inc., Japan
18:40
MoP-G02-7 Poster (120 min)Single Molecule Observations of Antifreeze Protein
by using Diffracted X-ray Tracking
R. Okada1 *, T. Arai2, Y. Matsushita1, J.-W. Chang1, H.
Sekiguchi3, K. Ikezaki1, S. Tsuda2, Y. C.Sasaki1,3
1Tokyo University, Japan, 2AIST / Hokkaido University,
Japan, 3JASRI, Japan
18:40
MoP-G02-8 Poster (120 min)Modeling of Conductivity Measurements of Wigner
Crystal Under Incomplete Compensation of The
Holding Field
V. E. Syvokon1, I. V. Sharapova1 *, K. Nasyedkin2
1
B. Verkin Institute for Low Temperature Physics andEngineering of NAS of Ukraine, Ukraine, 2RIKENCEMS,
Japan
18:40
MoP-G02-9 Poster (120 min)Solar Polisilicon Surface Nanostructuring by using
Low Energy Argon Ion Irradiation
J. L. Plaza*, S. R. y E. Diéguez
Universidad Autónoma de Madrid, España
18:40
MoP-G02-10 Poster (120 min)Void Growth in Silicon as Sink for Interstitial Iron:First Principle Study
O. A. Al-Ani*, J. P. Goss, M. Al-Hadidi, P. R. Briddon,
M. J. Rayson, N. E. B. Cowern
Newcastle University, UK.
18:40
MoP-G02-11 Poster (120 min)
Ligand exchange solvent effect on the densification of
CuIn0.7Ga0.3Se2 prepared using heating-up method
C. T. Yang*, H. I. Hsiang
National Cheng Kung University, Taiwan

MoP-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
18:40
MoP-G03-1 Poster (120 min)Ultrasonic-assisted synthesis and photocatalytic
properties of ZnO nanoplates and microflowers
A. Phuruangrat*
Prince of Songkla University, Thailand
The photocatalytic degradation of MB under UV
radiation showed that the hexagonal nanoplates of ZnO
have the highest photocatalytic activity.
18:40
MoP-G03-2 Poster (120 min)
Kinetics of cluster formation and growth of a solid
phase in the molten aluminum of high purity
V. B.Vorontsov*, V. K. Pershin
Ural State University of Railway Transport, Russia
18:40
MoP-G03-3 Poster (120 min)Morphological Controlled Synthesis (throughSurfactants) of Hierarchical Copper Selenide
Nanocrystals
M. Senthilkumar*, C. Imla Mary, S. Moorthy Babu

Anna University, India
18:40
MoP-G03-4 Poster (120 min)Growth of isolated InAs quantum dots on core-shell
GaAs/InP nanowire sidewalls by MOCVD
X. Yan*, F. Tang, Y. Wu, B. Li, X. Zhang, X. Ren
Beijing University of Posts and Telecommunications,
China
18:40
MoP-G03-5 Poster (120 min)Growth of Nanocrystals from Amorphous Bismuth
G. N. Kozhemyakin1 *, S. Y. Kovalev2
1
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia, 2Volodumur Dahl State
University, Russia
18:40
MoP-G03-6 Poster (120 min)Nanostructured Thermoelectric Materials
G. N. Kozhemyakin1 *, S. Y. Skipidarov2, A. N.
Parashchenko3
1
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia, 2Closed JSC “SKTB“NORD”, Ferrotec Corp., Russia, 3Volodumur Dahl
State University, Russia
18:40
MoP-G03-7 Poster (120 min)
Low-Temperature Nanophase Formation in the
Fluoride Systems
P. P. Fedorov*, S. V. Kuznetsov, M. N. Mayakova, Yu.
A. Rozhnova, V. V. Voronov, V. V. Osiko
Prokhorov General Physics Institute, Russian Academyof Sciences, Russia
18:40
MoP-G03-8 Poster (120 min)
Structural Properties of Tin Selenide Nanoparticles
Prepared by Aqueous Solution Method
R. J. Pathak1 *, R. J. Parmar2, V. R. Solanki1, M. D.
Parmar3, K. D. Patel4
1
RR Mehta College of Science & CL Parikh College ofCommerce, India, 2Sheth MN Science College, India,
3
MN Science College, India, 4S.P. University, India
18:40
MoP-G03-9 Poster (120 min)Hydrothermal Synthesis, Growth Mechanism andDown/Up Conversion Photoluminescence of Single
Crystal NaGd(MoO4)2 Nanocubes Doped with Eu3+,
Tb3+ and Yb3+/Er3+
A. Li1,2,3 *, H. Lin1, D. Xu1, S. Yang2,Y. Zhang1, Y.
Shao2
1School of Materials Science and Engineering, 2Schoolof Physics, Sun Yat-sen University, China, 3Jinan
University, China.
18:40
MoP-G03-10 Poster (120 min)Gallium, Indium, Bismuth and Antimony
Nanoparticles Obtained by Thermal Evaporation
G. N. Kozhemyakin1 *, O. E. Brul2, E. A. Panich2, A. I.
Dovgalyuk3, V. S. Kozub3, I. V. Savitskiy3, A. A.
Yarmov3
1
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia, 2Southern Federal
University, Russia, 3Volodumur Dahl State University,
Russia
18:40
MoP-G03-11 Poster (120 min)XANES study on chemical states of Pt catalysts
during SWNT growth8The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
M. Kumakura1 *, A. Kozawa1, T. Saida2, S. Naritsuka1, T.
Maruyama1,2
1
Department of Materials Science and Engineering,2
Department of Applied Chemistry, Meijo University,
Japan
18:40
MoP-G03-12 Poster (120 min)SWNT synthesis using Ru catalysts by alcohol CVD
methodT. Fujii1 *, A. Kozawa1, H. Kiribayashi1, S. Ogawa1, T.
Saida1,2, S. Naritsuka1, T. Maruyama1,2
1
Department of Materials Science and Engineering,2
Department of Applied Chemistry, Meijo University,
Japan
18:40
MoP-G03-13 Poster (120 min)Preparation of Cu loaded BiVO4 metal oxide as aphotocatalyst for methylene blue degradation undervisible light irradiation
P. Rajesh, M. Nirmal Prashanth*, P. Ramasamy
SSN College of Engineering, India
18:40
MoP-G03-14 Poster (120 min)The Synthesis of MgTeMoO6 Microcrystal in Novel
Hydrothermal System
B. Li*, Y. Liu, M. Zhang
Shandong University, China
18:40
MoP-G03-15 Poster (120 min)Construction of fine VO2 hetero nano-wall wires andtheir nanoscale transport properties
S. Tsubota1 *, A. N. Hattori1,2, Y. Azuma3, Y. Majima3,
H. Tanaka1
1
Osaka University, Japan, 2JST-PRESTO, Japan, 3Tokyo
Institute of Technology, Japan
18:40
MoP-G03-16 Poster (120 min)
Nanocomposites Zeolite-Oxides Titanium (IV):
Preparation, Characterization, Adsorption,
Photocatalytic and Bactericidal Properties
E. N. Domoroshchina*, G. V. Kravchenko, G. M.
Kuz’micheva
Moscow Technological University, Russia
18:40
MoP-G03-17 Poster (120 min)
Fabrication and characterization of self-organized
one-dimensional diluted magnetic semiconductors
A. Daidai, M. Koshimizu*, Y. Fujimoto, K. Asai
Tohoku University, Japan
18:40
MoP-G03-18 Poster (120 min)ZnO nanorods electrochemically deposited under amagnetic field
S. L.Yen*, H. S. Hsu
National Pingtung University, Taiwan, R.O.C
18:40
MoP-G03-19 Poster (120 min)Hydrothermal Formation of γ-(Al,Ga)2O3 Spinel
Nanoparticles
K. Sakoda*, Y. Hirose, K. Souma, H. Nishimoto, K.
Jinno, M. Hirano
Aichi Institute of Technology, Japan
18:40
MoP-G03-20 Poster (120 min)Solvothermal synthesis ofbismuth telluride
nanoplatesand their thin filmsby printing method
K. Wada1 *, K. Tomita2, M. Takashiri11Department of Materials Science, 2Department ofChemistry,Tokai University, Japan
18:40
MoP-G03-21 Poster (120 min)
Structural and thermoelectric properties of
Bi2Te3/Bi2Se3 multi-layer thin films by RF magnetron
sputtering
J. Hamada*, D. Zheng, M. Takashiri
Tokai University, Japan
18:40
MoP-G03-22 Poster (120 min)Effect of thiol concentration on etch pits formation on
1-dodecanethiol self-assembled monolayer on gold
substrate
Y. Ogasa*, H. Katsuno, T. Hirai, T. Nakada
Ritsumeikan University, Japan
18:40
MoP-G03-23 Poster (120 min)
Reduced parasitic growth of self-assisted GaAs
nanowires on silicon grown by molecular beam
epitaxy
G. W. Ju1 *, K. W. Park2, B. H. Na3, J. W. Min4, S. J.
Kang1, Y. T. Lee1
1
School of Information and Communications, Gwangju
Institute of Science and Technology, Korea, 2National
Renewable Energy Laboratory, USA, 3Samsung
Advanced Institute of Technology, Korea, 4Departmentof Physics and Photon Science, Gwangju Institute of
Science and Technology, Korea
18:40
MoP-G03-24 Poster (120 min)Effect of several factors on the crystal growth andphase transformation of ZrO2 nanocrystal byhydrothermal method
A. Fukaya1 *, K. Kobayashi2, T. Hattori1, M. Ozawa2
1
Department of Materials Science and Engineering,
2
Institute of Materials and systems for Sustainability,
Nagoya University, Japan
18:40
MoP-G03-25 Poster (120 min)Dynamic dissolution of MBE grown Type-II
GaSb/GaAs in arsenic environment
A. Salhi1 *, S. Alshaibani1, M. Alhamdan1, H.
Albrithen1,2, A. Alyamani1, M. El-Desouki3
1
King Abdulaziz City for Science and Technology,
Nanotechnology Research Centre, KSA, 2King Saud
University, KSA, 3King Abdulaziz City for Science andTechnology, Materials Science Research Institute, KSA
18:40
MoP-G03-26 Poster (120 min)Investigation of Effect of Formation of Gold
Nanoparticles in Chitosan Membranes
R. Radha Perumal*, S. N. Suraiya Begum
Anna University, India
18:40
MoP-G03-27 Poster (120 min)Epitaxial GaN nanowire arrays: controllable
synthesis, defect controlling and cathodluminescence
B. Liu*, X. Jiang
Institute of Metal Research, Chinese Academy of
Sciences, China
18:40
MoP-G03-28 Poster (120 min)Title: Synthesis and optoelectronic properties ofquaternary heterostructure and solid-solution
semiconductor nanowires
B. Liu*, X. Jiang
Institute of Metal Research, Chinese Academy of9The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Sciences, China
18:40
MoP-G03-29 Poster (120 min)Synthesis of Diamond single crystal nano-cone
structure array by Reactive ions etching using
Microwave Plasma Chemical vapor deposition(MPCVD)
M. F. Yuen*, B. He, W. J. Zhang
City University of Hong Kong, Hong Kong SAR
18:40
MoP-G03-30 Poster (120 min)Liquid phase growth of few-layer graphene on
sapphire substrates using Ga melts
T. Maruyama1 *, Y. Yamashita2, T. Saida1, S. Tanaka3, S.
Naritsuka2
1
Department of Applied Chemistry, 2Department ofMaterials Science and Engineering, Meijo University,
Japan, 3Osaka University, Japan
18:40
MoP-G03-31 Poster (120 min)
Fabrication and Characteriazation of ZnOnanostructures based wire
A. Abidov1 *, S. Abdukarimova1, U. Ziyamukhamedova1,
E. Sunil Babu2, S. W. Jeong, S. Kim2
1
Tashkent State Technical University, Uzbekistan
2
Kumoh National Institute of Technology, Korea
18:40
MoP-G03-32 Poster (120 min)Growth and Structure of Single Crystal
Sr3NbFe3Si2O14 –Langasite Family Multiferroics
A. P. Dudka1, A. M. Balbashov2 *1
The Institute of crystallography RAS, Russia, 2Moscow
Power Engineering Institute, Russia
18:40
MoP-G03-33 Poster (120 min)Growth and Property of Nickel-Seeded Gallium
Nitride Nanowires
C. C. Su*, K. L. Wu, C. H. Huang, W. I. Lee, Y. C.
ChouNational Chiao Tung University, Taiwan
18:40
MoP-G03-34 Poster (120 min)Study on Selective-Area Growth of InGaAs
Nanowires for Optical Communication Band
K. Chiba1 *, K. Tomioka1,2,3, J. Motohisa1, F. Ishizaka1,2,
A. Yoshida1, T. Fukui1,2
1
Graduate School of Information Science andTechnology, 2Research Center for Integrated Quantum
Electronics, Hokkaido University, Japan, 3JST-PRESTO,
Japan
18:40
MoP-G03-35 Poster (120 min)Synthesis and characteristics of layered SnS2
nanostructures via hot injection method
P. C. Huang1 *, H. I. Wang1, J. L. Huang1, 2, S. C. Wang3
1
National Cheng Kung University, Taiwan, 2National
University of Kaohsiung, Taiwan, 3Southern Taiwan
University of Science and Technology, Taiwan
18:40
MoP-G03-36 Poster (120 min)Synthesis of nanophasic CoFe2O4 powder by
self-igniting solution combustion method using mix
up fuels
D. Rajan Babu*, K. Venkatesan
VIT University, India
18:40
MoP-G03-37 Poster (120 min)TiO2/ZnO nanorods growth and their applications forhydrogen gas sensing
E. Sunil Babu*, S. Kim
Kumoh National Institute of Technology, Korea.
18:40
MoP-G03-38 Poster (120 min)Effect of sintering temperature on phase transition
and thermoelectric properties of bismuth telluride
nanostructures
P. Anandan1, M. Arivanandhan2 *, D. Rajan Babu3, M.
Azhagurajan4, R. Jayavel1, Y. Hayakawa5
1
Thiru Kolanjiyappar Government Arts College, India,
2
Anna University, India, 3VIT University, India, 4Tohoku
University, Japan, 5Shizuoka University, Japan
18:40
MoP-G03-39 Poster (120 min)Preparation of concrete material with environmental
durability by the addition of nanoparticles
M. P. Sivaraj*, R. Jayavel
Anna University, India
18:40
MoP-G03-40 Poster (120 min)Use of gold nanoparticles on CdS films forphotovoltaic applications
S. Rubio*, N. V. Sochinskii, J. L. Plaza, E. Diéguez
Universidad Autónoma de Madrid, Spain
18:40
MoP-G03-41 Poster (120 min)Polarized Photoluminescence Emission of
InGaAsN/GaAs T-shaped Quantum Wire Structure
Grown by MOVPE
P. Klangtakai1,2,3 *, S. Sanorpim4, F. Karlsson5, P. O.
Holtz5, K. Onabe6
1Faculty of Science, Department of Physics, Khon Kaen
University, Thailand, 2Nanotec-KKU Center of
Excellence on Advanced Nanomaterials for Energy
Production and Storage, Thailand, 3Integrated
Nanotechnology Research Center, Khon Kaen University,
Thailand, 4Chulalongkorn University, Thailand,
5
Linköping University, Sweden, 6The University of Tokyo,
Japan
18:40
MoP-G03-42 Poster (120 min)Influence of Non-Phosphine Solvents on Structural,
Optical and Morphological Properties of Copper Tin
Selenide (Cu2SnSe3) Nanoparticles
S. Ananthakumar, J. Ramkumar, S. Moorthy Babu*
Anna University, India
18:40
MoP-G03-43 Poster (120 min)Morphological Controlled Synthesis (throughSurfactants) of Hierarchical Copper Selenide
Nanocrystals
M. Senthilkumar, C. Imla Mary, S. Moorthy Babu*
Anna University, India
18:40
MoP-G03-44 Poster (120 min)
Fabrication of ZnO/Graphene Composite for Room
Temperature NO2 Sensing
Y. Xia1, 2 *, J. Wang2, X. Li3, D. Zhou1, L. Xiang2
1
Sichuan University, China, 2Department of Chemical
Engineering, 3Institute of Microelectronics, Tsinghua
University, China
18:40
MoP-G03-45 Poster (120 min)*Late News
Comparative Analysis of LiGd(WO4)2: Eu3+
Phosphors Derived by Sol-Gel and Hydrothermal
Methods

10

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
K. Kavi Rasu, D. Balaji, S. Moorthy Babu*
Anna University, India.
18:40
MoP-G03-46 Poster (120 min)*Late News
Role of temperature and growth time on the
structural, optical and morphological properties ofhydrothermally grown TiO2 nanorods
S. Ananthakumar1, P. Yilmaz2, X. Li2, J. Briscoe2, A.-L.
Anderson2, S. Dunn2, S. Moorthy Babu1 *1Anna University, India, 2Queen Mary University of
London, UK.

MoP-G04
Thin Films and Epitaxial Growth
18:40
MoP-G04-1 Poster (120 min)Epitaxial growth of Ga2O3:Er films on silicon
substrate
Z. Chen1 *, K. Saito1, T. Tanaka1, M. Nishio1, M. Arita2,
Q. Guo1
1
Saga University, Japan, 2Kyushu University, Japan
18:40
MoP-G04-2 Poster (120 min)Transport Phenomena in a Slim Vertical CVD
Reactor for Minimal Manufacturing
A. Yamada1, N. Li1, M. Matsuo1, H. Habuka1 *, Y.
Ishida2, 3, S. Ikeda2,3, S. Hara2,3
1
Yokohama National University, Japan, 2National
Institutes of Advanced Science and Technology, Japan,
3
Minimal Fab Development Association, Japan
18:40
MoP-G04-3 Poster (120 min)
The Epitaxial Relationships: Tensor Approach
A. O. Lebedev1 *, A. N. Efimov1, A. V. Bulatov2
1
Ioffe Institute, Russia, 2Institute of Biochemical Physics,
Russia
18:40
MoP-G04-4 Poster (120 min)Sol-gel Growth of In2O3 Thin Films
S. A. Palomares Sanchez1,2, B. E.Watts2, A. Baraldi3, A.
Parisini3, M. Pavesi3, S. Vantaggio3, R. Fornari3 *1
UASLP, México, 2IMEM-CNR Institute, Italy, 3Parma
University, Italy
18:40
MoP-G04-5 Poster (120 min)Dependence of the properties of ZnO thin films on the
structure of de Laval nozzle for the generation ofhigh-energy H2O beam
K. Watanabe, S. Ono, Y. Teraguchi, T. Nakamura, T.
Kato, K. Yasui*
Nagaoka University of Technology, Japan
18:40
MoP-G04-6 Poster (120 min)
X-ray Diffraction Simulation of GeSn/Ge
Multi-quantum Wells with Kinematic Approach
H. Li *, C. Chang, H.-H. Cheng
National Taiwan University, Taiwan, R. O. C
18:40
MoP-G04-7 Poster (120 min)Characteristic μm-sized VO2 domains grown on
Al2O3 (001) deposited under particular substratebiasing conditions
N. Hanis Azhan1 *, K. Okimura1, M. Zaghrioui2, J.
Sakai2
1
Tokai University, Japan, 2Université François Rabelais
de Tours, France
18:40
MoP-G04-8 Poster (120 min)Characteristics of Li-doped amorphous NiO thinfilms formed by RF magnetron sputtering
K. Sato1 *, S. Kim1, H. Naganuma1, S. Komuro2, X.
Zhao1
1Tokyo University of Science, Japan, 2Toyo University,
Japan
18:40
MoP-G04-9 Poster (120 min)Solution growth on reorganized porous Si foils and on
glass substrates
C. Ehlers, R. Bansen*, Th. Teubner, T. Boeck
Leibniz Institute for Crystal Growth, Germany
18:40
MoP-G04-10 Poster (120 min)Orientational control of CeO2 films on sapphire
substrates grown by magnetron sputtering
S. Yamamoto*, M. Sugimoto, H. Koshikawa, T. Hakoda,
T. Yamaki
Japan Atomic Energy Agency, Japan
18:40
MoP-G04-11 Poster (120 min)Luminescence and Scintillation Properties of Liquid
Phase Epitaxy Grown Y2SiO5:Ce Single Crystalline
Films
K. Wantong1 *, N. Yawai1, W. Chewpraditkul1, M.
Kucera2, M. Nikl3
1
King Mongkut’s University of Technology Thonburi,
Thailand, 2Charles University, Czech Republic, 3Instituteof Physics, AS CR, Czech Republic
18:40
MoP-G04-12 Poster (120 min)
The n-i-p heterostructure with oxide thin films grownby the Atomic Layer Deposition method
L. Wachnicki1 *, S. Gieraltowska1, B. S. Witkowski1, M.
Godlewski1,2
1Institute of Physics, Polish Acad. of Sciences, Poland,2
Cardinal S. Wyszynski University, Poland
18:40
MoP-G04-13 Poster (120 min)Enhanced Lateral Overgrowth of GaN Using a
Graphene Mask
J.-Y. Lee*, J.-H. Min, M.-D. Park, W.-L. Jeong, D.-S.
Lee
Gwangju Institute of Science and Technology, Korea
18:40
MoP-G04-14 Poster (120 min)
High-temperature growth and characterization of(Er,Yb):YAl3(BO3)4 single crystal layers
E. Volkova, V. Markin, N. I. Leonyuk*
Moscow State University, Russia
18:40
MoP-G04-15 Poster (120 min)
GaAs single-junction solar cell using modulation
doping for low doped p-GaAs base grown by MOVPE
S.-J. Kang1 *, K.-W. Park3, E.-K. Kang1, H.-J. Choi2,
S.-K. Lee1, J.-W. Min2, G.-W. Ju1, H.-J Kim4, Y. T. Lee1
1
School of Information and Communications,2
Department of Physics and Photon Science, Gwangju
Institute of Science and Technology, Korea, 3National
Renewable Energy Laboratory, USA, 4Korea Photonics
Technology Institute, Korea
18:40
MoP-G04-16 Poster (120 min)Growth and Characterization of β-Ga2O3 Films on
LiAlO2 Substrates by Chemical Vapor Deposition
MethodJ.-Yu Zheng1,2, C.-A. Li1,2 *, M. M.C. Chou1,2

11

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
1

National Sun Yat-sen University, Taiwan, 2Taiwan
Consortium of Emergent Crystalline Materials, Ministryof Science and Technology, Taiwan
18:40
MoP-G04-17 Poster (120 min)
Simulation of Surface Reaction during Silicon
Selective Epitaxy Growth by DFT calculation
T. R. Mayangsari*, L. L. Yusup, J.-W. Jung, W.-J. Lee
Sejong University, Korea
18:40
MoP-G04-18 Poster (120 min)CdS films on silicon substrates by Chemical BathDeposition
S. Rubio*, J. L. Plaza, N. V. Sochinskii, E. Diéguez
Universidad Autónoma de Madrid, Spain
18:40
MoP-G04-19 Poster (120 min)Control of native acceptor density in epitaxial Cu2O
thin films grown by electrochemical process
A. Ashida*, S. Sato, T. Yoshimura and N. Fujimura
Osaka Prefecture University, Japan
18:40
MoP-G04-20 Poster (120 min)Temperature Uniformity Analysis in an Industrial
GaN-MOCVD Reactor
J. Zheng1, H. S. Fang1 *, Z. Zhang1, Z. Y. Gan2, H. Yan3
1
School of Energy and Power Engineering, 2School of
Mechanical Science and Engineering, Huazhong
University of Science & Technology, China, 3Wuhan
University of Technology, China
18:40
MoP-G04-21 Poster (120 min)PECVD-SiNx:H Growth-Induced Defects in
Crystalline Si
T. Kamioka1 *, H. Lee1, K. Nakamura2, Y. Ohshita1
1
Toyota Technological Institute, Japan, 2Meiji University,
Japan
18:40
MoP-G04-22 Poster (120 min)
TEM assessment of cubic GaN films on GaAs (001)and (311) oriented substrates grown by MOVPE
J. Parinyataramas1, S. Sumnavadee1, P. Wanarattikan2 *,S. Sanorpim1, K. Onabe3
1Chulalongkorn University, Thailand, 2Huachiew
Chalermprakiet University, Thailand, 3The University ofTokyo, Japan
18:40
MoP-G04-23 Poster (120 min)*Late News
Effect of process parameters on the crystal growthand opti-electronic properties of Mo doped ZnO thinfilm by using co-sputtering technology
C. C. Chiang1, T. H. Chen1 *, L. Tsai1, C. H. Chen1, S. H.
Wang2, B. R. Jiang1
1
National Kaohsiung University of Applied Sciences,
Taiwan, 2I-Shou University, Taiwan
18:40
MoP-G04-24 Poster (120 min)*Late News
MOCVD grown high-quality InAsSb films on GaAs
substrates for room temperature MIR photodetection
P.-N. Ni, J.-C. Tong, L. Y. M. Tobing, L. Qian, S.-P. Qiu,
Z.-J. Xu, X.-H. Tang, D.-H. Zhang*
Nanyang Technological University, Singapore
18:40
MoP-G04-25 Poster (120 min)*Late News
Outrageous ferromagnetism and superconductivity inepitaxial SmN
B. J. Ruck, E.-M. Anton, F. Natali*, H. J. Trodahl
Victoria University of Wellington, New Zealand

MoP-G07
Defect Formation
18:40
MoP-G07-1 Poster (120 min)Czochralski growth of bulk Li2MoO4 crystals for the
scintillating bolometers used in the rare events
searches
P. Veber1 *, M. Velázquez1, P. de Marcillac2, A.
Giuliani2, D. Denux1, O. Viraphong11
CNRS, Université de Bordeaux, France,
2
CNRS-Université d’Orsay, France
18:40
MoP-G07-2 Poster (120 min)Self-Organization of Colloidal Particles in CaF2
CrystalsP. P. Fedorov1 *, A. V. Veniaminov2, A. S. Shcheulin2, A.
E. Angervaks2, A. I. Ryskin2
1
Prokhorov General Physics Institute, Russian Academyof Sciences, Russia, 2ITMO University, Russia
18:40
MoP-G07-3 Poster (120 min)Effect of oxygen atoms on dislocation multiplication
in a silicon crystal
W. Fukushima1 *, B. Gao2, S. Nakano2, H. Harada2, Y.
Miyamura2, K. Kakimoto1,2
1
Department of Aeronautics and Astronautics, 2ResearchInstitute for Applied Mechanics, Kyushu University,
Japan
18:40
MoP-G07-4 Poster (120 min)Rapid Growth of the Large Sized KTiOPO4 Single
Crystals
Y. X. Sun*, X. T. Tao
Shandong University, China
18:40
MoP-G07-5 Poster (120 min)
Unified model for impacts of doping and thermal
stress on the formation of intrinsic point defects ingrowing single crystal Si
K. Kobayashi*, S. Yamaoka, K.Sueoka
Okayama Prefectural University, Japan
18:40
MoP-G07-6 Poster (120 min)Density functional theory of the impacts of doping
and thermal stress on intrinsic point defects ingrowing Ge crystals
S. Yamaoka*, K. Kobayashi, K. Sueoka
Okayama Prefectural University, Japan
18:40
MoP-G07-7 Poster (120 min)
Evaluation of Stability Region for
Scandium-Containing Rare-Earth Garnet Single
Crystals and Their Congruent-Melting Compounds
I. A. Kaurova1, E. N. Domoroshchina1 *, G. M.
Kuz’micheva1, V. B. Rybakov2
1
Moscow Technological University, Russia, 2Lomonosov
State University, Russia
18:40
MoP-G07-8 Poster (120 min)Investigation on hydrothermal LiFePO4 single
crystals
M.D. Ren*, H.-T. Zhou, X.-L. He
China Nonferrous Metal (Guilin) Geology and Mining
Co., Ltd. China
18:40
MoP-G07-9 Poster (120 min)Characterization on the dependence of growth

12The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
parameters on defect formation in DKDP crystals
B. Liu1 *, X. Ju1, X. Sun2
1
University of Science and Technology Beijing, China,
2
Shandong University, China.
18:40
MoP-G07-10 Poster (120 min)
Dislocation Structure of Ge Crystals Grown by the
Low Thermal Gradient Czochralski Technique
E. M. Trukhanov1, K. B. Fritzler1, A. P. Vasilenko1, A. V.
Kolesnikov1, P. V. Kasimkin2 *, V. A. Moskovskih2
1
Institute of Semiconductor Physics, Russia, 2Novosibirsk
State Technical University, Russia
18:40
MoP-G07-11 Poster (120 min)Relationships among Chemical Composition, Lattice
Constants, and Acoustic Properties for
Ca3Ta(Ga1-xAlx)3Si2O14 Single Crystals
Y. Ohashi1 *, M. Kitahara1, T. Kudo1, Y. Yokota2, Y.
Shoji1,3, S. Kurosawa2, K. Kamada2,3, A. Yoshikawa1,2,3
1
Institute for Materials Research (IMR), 2New Industry
Creation Hatchery Center (NICHe), Tohoku University,
Japan, 3C&A Corporation, Japan
18:40
MoP-G07-12 Poster (120 min)Dynamics analysis of growth-twin formation incompound crystals: Study on liquid encapsulated
Czochralski-grown bulk InP single crystals
S. Wang1 *, N. Sun1, X. Li1, H. Shao1, Y. Shi1, Y. Wang1,
L. Fu1, Y. Han2, R. Yang2, H. Liu1, T. Sun1
1
Hebei Semiconductor Research Institute, China, 2Hebei
University of Technology, China
18:40
MoP-G07-13 Poster (120 min)Influence of grain boundaries on stress concentrationin multicrystalline Si
S. Sugioka, K. Kutsukake*, M. Deura, Y. Ohno, I.
Yonenaga
Tohoku University, Japan
18:40
MoP-G07-14 Poster (120 min)Lattice parameter of heavily impurity doped Si
I. Yonenaga1 *, R. Gotoh1, K. Omot2, K. Inoue1, K.
Kutsukake1, M. Deura1, Y. Ohno1
1
Tohoku University, Sendai 980-8577, Japan, 2Rigaku
Corporation, Japan
18:40
MoP-G07-15 Poster (120 min)Enhanced diffusivity of Mn in heavily dislocatedregion of Si crystal
R. Gotoh, Y. Ohno, I. Yonenaga*
Tohoku University, Japan
18:40
MoP-G07-16 Poster (120 min)Abnormal diffusivity of oxygen inthermal-double-donor formation in Si
T. Yoshioka, M. Deura, K. Kutsukake, Y. Ohno and I.
Yonenaga*
Tohoku University, Japan

MoP-G08
Advanced Growth Technologies
18:40
MoP-G08-1 Poster (120 min)Synthesis of AgGaGeS4 polycrystalline materials byvapor transporting and mechanical oscillation
methodW. Huang*, B. Zhao, S. Zhu, Z. He, B. Chen, Z. Zhen, Y.

Pu, S. Fu, Y. Zhao
Sichuan University, China
18:40
MoP-G08-2 Poster (120 min)Growth of ZnO Films Deposited by Spray Pyrolysis
Using Diethylzinc Solution
M. Imai1, 2 *, M. Watanabe1, 2, A. Mochihara1, 2, H.
Tominaga1, K. Yoshino1, 2, Q. Shen2, 3, T. Toyoda2, 3, S.
Hayase2, 4
1University of Miyazaki, Japan, 2CREST, JST, Japan,
3
The University of Electro-Communications, Japan,
4
Kyusyu Institute Technology, Japan
18:40
MoP-G08-3 Poster (120 min)Spin-Crossover FeIIN6 Complexes of Nonplanar
Tridentate Ligands
Saleem Javed*
Dr. B. R. Ambedkar University, India
18:40
MoP-G08-4 Poster (120 min)Crystal growth and crystal properties studying in thesystem K2(Co,Ni)(SO4)2∙6H2O
N. A. Vasilyeva*, M. S.Grigorieva, A. E. Voloshin
Shubnikov Institute of Crystallography of Russian
Academy of Sciences, Russia
18:40
MoP-G08-5 Poster (120 min)Bridgman Growth and Luminescence Properties ofDysprosium Doped Lead Potassium Niobate Crystal
T. Tian*, W. B. Liu and J.Y. Xu
Shanghai Institute of Technology, China
18:40
MoP-G08-6 Poster (120 min)Control of Solid-Liquid Interface during Growth of
Ce doped Gd2Si2O7 Crystal by Traveling Solvent
Floating Zone Method
K. Matsuya1 *, M. Nagao1, S. Watauchi1, I. Tanaka1, S.
Kurosawa2,3, Y. Yokota3, A. Yosikawa2,3
1
University of Yamanashi, Japan, 2IMR, 3NICHe, Tohoku
University, Japan
18:40
MoP-G08-7 Poster (120 min)
MBE formation of Ga nanostructures using GaAs
native oxide
M. S. Solodovnik*, O. A. Ageev, S. V. Balakirev, M. M.
Eremenko, I. A. Mikhaylin
Southern Federal University, Russia
18:40
MoP-G08-8 Poster (120 min)
The Rubidium and Cesium Complex Hydrogen
Sulphatephosphates - Perspective Materials for
Hudrogen Energy
V. A. Komornikov1 *, V. V Grebenev1, I. P. Makarova1,
E. V. Selezneva1, P. V. Andreev2
1
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia, 2Lobachevsky State
University, Russia
18:40
MoP-G08-9 Poster (120 min)Growth of SnSe crystal by an inclined furnace
M. Jin1 *, J. Jiang1, H. Hu1, H. Shen2, J. Xu2
1
Ningbo Institute of Industrial Technology, Chinese
Academy of Sciences, China., 2Shanghai Institute ofTechnology, China
18:40
MoP-G08-10 Poster (120 min)Carbon polymorphic nanocrystals grown in ~GParange high pressures using laser-heated13The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
diamond-anvil cell
K. Niwa*, T. Oda, M. Iida, K. Kusaba, Y. Shirako, M.
Hasegawa
Nagoya University, Japan
18:40
MoP-G08-11 Poster (120 min)
The Effect of Partial Substitution of Fluoro-anion on
Structural and Electrochemical properties of
LiNi0.5Mn1.5O4-x Crystals
D. Kim1 *, H. Shiiba1, N. Zettsu1,2, K. Teshima1,2
1Faculty of Engineering, 2Center for Energy &Environmental Science, Shinshu University, Japan
18:40
MoP-G08-12 Poster (120 min)
Low-Temperature Flux Growth of Crystalline
Titanate for Ion Exchange
T. Sudare1 *, F. Hayashi2, K. Teshima1,2
1Center for Energy and Environmental Science, 2Facultyof Engineering, Shinshu University, Japan

MoP-T07
Materials for Electron Devices
18:40
MoP-T07-1
Poster (120 min)Orientation-dependent electromechanical propertiesof Mn-doped (Li,Na,K)(Nb,Ta)O3 single crystals
H. Liu1,2 *, J. Koruza1, P. Veber2, D. Rytz3, M.
Maglione2, J. Rödel1
1
Technische Universität Darmstadt, Germany,2
CNRS-ICMCB, France, 3Forschungsinstitut fürmineralische und metallische Werkstoffe, Germany
18:40
MoP-T07-2
Poster (120 min)Enhanced efficiency of Luminescence withstoichiometry control in LiGd(W(1-x)MoxO4)2:Eu3+
Red Phosphors
K. Kavi Rasu, D. Balaji, S. Moorthy Babu*
Anna University, India
18:40
MoP-T07-3
Poster (120 min)Preparation and Characterization of Highly Oriented(K,Na)NbO3 Thin Films Using a Calcium
Niobate-Based Nanosheets Buffer Layer
W. Sakamoto1 *, M. Iwata1, I. Yuitoo2, T. Takeuchi2, K.
Hayashi1, T. Yogo1
1
Nagoya University, Japan, 2Waseda University, Japan
18:40
MoP-T07-4
Poster (120 min)Lead-free Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 Based
Nanocomposite Materials For Energy Harvesting
Z. Wang1 *, L. Xing1, R. Zhu1, H. Kimura2
1
Southeast University, China, 2National Institute ofMaterials Science, Japan
18:40
MoP-T07-5
Poster (120 min)Polycrystalline Type-I BaGaGe Clathrate with the
Optimized Power Factor Grown by the Vertical
Bridgman Method with Tunning Ga Content
B.-H. Siao and L.-S. Chang*
National Chung Hsing University, Taiwan, R.O.C.
18:40
MoP-T07-6
Poster (120 min)Investigation of relaxor-PT single crystals forpractical applications
H. Luo*, X. Zhao, W. Di, H. Deng, X. Li
Shanghai Institute of Ceramics, Chinese Academy of
Sciences, China

18:40
MoP-T07-7
Poster (120 min)
The effect of complex electrodeposition by theaddition of Multi-layered graphene on copper
nanoparticles
Y.-L. Cho1 *, J.-W. Lee1, Y.-I. Song2, C. Park3, S.-J.
Suh2
1
School of Advanced Materials Science & Engineering,
2
Advanced Materials and Process Research for IT,
Sungkyunkwan University, Korea, 3Pukyoung National
University, Korea
18:40
MoP-T07-8
Poster (120 min)Single crystal growth and exploration of newiron-based superconductors in Ca-RE-Fe-As system
H. Ogino1,2 *, H. Yakita1, A. Sala2, A. Iyo2, H. Eisaki2, J.
Shimoyama3, K. Kishio1
1
The University of Tokyo, Japan, 2National Institute ofAdvanced Industrial Science and Technology, Japan,
3
Aoyama Gakuin University, Japan
18:40
MoP-T07-9
Poster (120 min)Crystal Structure and Luminescence properties of theNovel KSrR(BO3)2 with R = Y, Tb, Yb
A. K. Bolatov1 *, A. E. Kokh2, N. G..Kononova2, V. S.
Shevchenko2, Yu. V.Seryotkin2,3, Kh. A. Abdullin1, B. M.
Uralbekov1, M. Burkitbayev1
1
Al-Farabi Kazakh National University, Kazakhstan,
2
V.S. Sobolev Institute of Geology and Mineralogy SB
RAS, Russia, 3Novosibirsk state university, Russia
18:40
MoP-T07-10 Poster (120 min)Field-induced phase transition and electromechanicalproperties of PLZST antiferroelectric single crystal
Q. Li1 *, J. H. Gao1, F. P. Zhuo1, Q. F. Yan1, Y. L.
Zhang2
1
Department of Chemistry, 2State Key Laboratory of New
Ceramics and Fine Processing, Tsinghua University,
China
18:40
MoP-T07-11 Poster (120 min)Multiscale investigation of electronic structures andoptical properties induced by mc-Si defects on solar
cell performance
O. A. Al-Ani*, J. P. Goss, A. M.A. Sabaawi, P. R.
Briddon, M. J. Rayson, N. E. B. Cowern
Newcastle University, UK
18:40
MoP-T07-12 Poster (120 min)Growth and characteristics of β-Ga2O3 single crystals
by vertical Bridgman method in ambient air (I)T. Kobayashi1 *, E. Ohba1, J. Yanagisawa1, C.
Miyagawa1, Y. Nakamura1, K. Hoshikawa2
1
Fujikoshi Machinery Corp., Japan, 2Shinshu University,
Japan

14

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Tuesday, 9 AugustAward 3
Tuesday morning, 9 August, 8:30
Shirotori Hall
8:30
IOCG Award Lecture (30 min)[Frank Prize Lecture]
Thermodynamic Considerations for Epitaxial Growthof III/V Alloys
G. B. Stringfellow*
University of Utah, USA
Plenary 4
Tuesday morning, 9 August, 9:00
Shirotori Hall
9:00
Plenary Lecture (40 min)Research progress and prospect of UV nonlinear
optical crystals
Zhanggui Hu*, Chuangtian Chen
Chinese Academy of Sciences, China
Coffee break
Tuesday morning, 9 August, 9:40
Event Hall, Shirotori Hall
Session Tu1
Tuesday morning, 9 August, 10:10
G01, G02, G03, G04, G06, G07, G08, G10, T07, T09

Tu1-G01
Fundamentals of Nucleation and Crystal Growth
Room: Oral 6
10:10
Tu1-G01-1
Invited oral (25 min)Bio-inspired single-crystal composites: Growth
Mechanisms and Properties
L.A. Estroff*
Cornell University, USA
10:35
Tu1-G01-2
Oral (15 min)Effect of type III antifreeze protein on themorphology and growth kinetics of ice crystals
D. A. Vorontsov1,2 *, G. Sazaki1, K. Nagashima1, K.
Murata1, Y. Furukawa1
1
Hokkaido University, Japan, 2Lobachevsky State
University of Nizhny Novgorod, Russia
10:50
Tu1-G01-3
Oral (15 min)Effect of water on the growth shape of TiO2 rutile
crystals in the presence of glycolic acid
H. Nada1 *, M. Kobayashi2, M. Kakihana2
1
National Institute of Advanced Industrial Science andTechnology, Japan, 2Tohoku University, Japan
11:05
Tu1-G01-4
Oral (15 min)Independence of nanowire length distribution frominitial conditions
N. V. Sibirev1,2 *, Yu. S. Berdnikov1,2, V. G.
Dubrovskii1,2
1
St. Petersburg Academic University, Russia, 2ITMO

University, Russia
11:20
Tu1-G01-5
Oral (15 min)Optical Investigations of Nanoconfined NaClO3
Crystal Growth
F. Kohler*, D. K.Dysthe
University of Oslo, Norway
11:35
Tu1-G01-6
Oral (15 min)
Secondary Nucleation of Calcium Carbonate
X. Ma1 *, R. Beck2, J.-P. Andreassen1
1
Norwegian University of Science and Technology,
Norway, 2Fjords Processing AS, Norway
11:50
Tu1-G01-7
Oral (15 min)Crystal Growth in Se – Te Bulk Glasses and Thin
Films
S. Martinková1 *, J. Barták1, J. Málek1, H. Segawa2
1
University of Pardubice, Czech Republic, 2National
Institute for Materials Science, Japan

Tu1-G02
Surfaces and Interfaces
Room: Oral 3
10:10
Tu1-G02-1
Invited oral (25 min)Creation of atomically-ordered side-surfaces on thethree-dimensionally patterned Si substrate
A. N. Hattori1, 2 *, K. Hattori3, S. Takemoto3, H. Daimon3,
H. Tanaka1
1
Osaka University, Japan, 2JST-PREST, Japan, 3Nara
Institute of Science and Technology, Japan
10:35
Tu1-G02-2
Oral (15 min)Low temperature formation of Si(110)-16 × 2 throughwet etching
M. Yano1 *, S. Suzuki1, 2, Y. Uozumi1, 3, H. Asaoka1
1
Japan Atmic Energy Agency, Japan, 2Ibaraki University,
Japan, 3Hitachi Power Solutions Co., Ltd., Japan
10:50
Tu1-G02-3
Oral (15 min)Aluminum-induced Crystallization of sub-50nm
Silicon Thin Films – Controlled Grain Morphology
through Surface Roughness and Realization of Films
on Flexible Substrates
M. F. Hainey, Jr.1 *, S. Hu2, J. Innocent-Dolor3, J. M.
Redwing1
1Penn State University, USA, 2University ofPennsylvania, USA, 3Syracuse University, USA
11:05
Tu1-G02-4
Oral (15 min)Investigation of Interaction of One Dimensional
Tellurium Nanowires with BSA Templated Gold
Quantum Clusters
R. Radha Perumal*
Anna University, India
11:20
Tu1-G02-5
Oral (15 min)Lead-free0.96(K0.48Na0.52)(Nb0.95Sb0.05)O3-0.04Bi0.05(Na0.82K0.18)0.
05ZrO3 Nanofibers for Energy Harvesting
R. Zhu*Southeast University, China
11:35
Tu1-G02-6
Oral (15 min)Physical confinement promotes crystalline interfacesin Cu2O nanorods with entrapped Au nanoparticles
E. Asenath-Smith1 *, J. M. Noble2, R. Hovden2, A. M.

15

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Uhl1, A. DiCorato1, Y.-Y. Kim3, F. C. Meldrum3, L. F.
Kourkoutis2,4, L. A. Estroff14
1
Department of Materials Science and Engineering,2
School of Applied and Engineering Physics, Cornell
University, USA, 3University of Leeds, UK, 4Kavli
Institute at Cornell for Nanoscale Science, Cornell
University, USA
11:50
Tu1-G02-7
Oral (15 min)Phase transition process in DDAB supported lipid
bilayer
T. Isogai1 *, S. Nakada1, N. Yoshida1, H. Sumi1, R. Tero2,
S. Harada1, 3, T. Ujihara1, 3, M. Tagawa1, 3
1
Department of Materials Science and Engineering,
Nagoya University, Japan, 2Toyohashi University ofTechnology, Japan, 3IMaSS, Nagoya University, Japan

Tu1-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
Room: Oral 2
10:10
Tu1-G03-1
Invited oral (25 min)Growth of III-Nitride Quantum Dots by Metal
Organic Chemical Vapour Deposition for Single
Photon Emitters
Y. Arakawa1,2 *, M. Arita1, M. J. Holmes1
1
Institute for Nano Quantum Information Electronics,
2
Institute of Industrial Science, The University of Tokyo,
Japan
10:35
Tu1-G03-2
Oral (15 min)
Kinetics of self-induced nucleation and opticalproperties of GaN nanowires grown byplasma-assisted molecular beam epitaxy on
amorphous AlxOy
Z. R. Zytkiewicz1 *, K. P. Korona2, M. Sobanska1, K.
Klosek1, G. Tchutchulashvili1
1Institute of Physics, Polish Academy of Sciences, Poland,
2
University of Warsaw, Poland
10:50
Tu1-G03-3
Oral (15 min)Self-assembled growth of GaN nanowires on
amorphous AlxOy and nitridated Si: comparison of
nucleation and growth processes
M. Sobanska1 *, S. Fernández-Garrido2, Z. R.
Zytkiewicz1, G. Tchutchulashvili1, S. Gieraltowska1, K.
Klosek1, O. Brandt2, L. Geelhaar2
1
Institute of Physics, Polish Academy of Sciences, Poland,
2Paul-Drude-Institut für Festkörperelektronik, Germany
11:05
Tu1-G03-4
Oral (15 min)Controlling the growth orientation, position, andcomposition of III-nitride nanowires with hydride
vapor phase epitaxy
K. Lekhal1,2 *, S. Y. Bae1, H. J. Lee1, K. Nishi1, K.
Saitoh1, M. Deki1,2, Y. Honda1,2, H. Amano1,2,3
1
Department of Electrical Engineering and Computer
Science, 2Institute of Materials and Systems for
Sustainability, 3Akasaki Research Center, Nagoya
University, Japan
11:20
Tu1-G03-5
Oral (15 min)Growth of vertically oriented GaN nanostructureswith a hafnium pre-orienting layer on Si substrates

S.-Y. Bae1 *, K. Lekhal1,2, H.-J. Lee1, T. Mitsunari1, J.-W.
Min3, D.-S. Lee4, M. Deki2, Y. Honda2, H.
Amano2,5
1
Department of Electrical Engineering and Computer
Science, 2Institute of Materials and Systems for
Sustainability, Nagoya University, Japan, 3Departmentof Physics and Photon Science, 4School of Information
and Communications, Gwangju Institute of Science andTechnology, Korea, 5Akasaki Research Center, Nagoya
University, Japan
11:35
Tu1-G03-6
Oral (15 min)Control of the coalescence degree of III-nitride
nanowires with AlN buffer layer in PA-MBE for highindium composition of axial InGaN segments
J.-W. Min1 *, S.-Y. Bae2, H.-Y. Hwang3, E.-K. Kang3,
C.-H. Kim3, S.-J. Kang3, G-.W. Ju3, K.-W. Park4, B.-H.
Na5, C.-Y. Park5, Y.-D. Jho3, Y.-T. Lee3
1
Department of Physics and Photon Science, Gwangju
Institute of Science and Technology, Korea, 2Nagoya
University, Japan, 3School of Information andCommunications, Gwangju Institute of Science andTechnology, Korea, 4National Renewable Energy
Laboratory, Golden, USA, 5Samsung Advanced Instituteof Technology, Korea
11:50
Tu1-G03-7
Oral (15 min)Si-based visible luminescent material grown on Si
substrates by chemical reaction with Si powder
T. Yamaguchi*, H. Katsumata
Meiji University, Japan

Tu1-G04
Thin Films and Epitaxial Growth
Room: Oral 4
10:10
Tu1-G04-1
Invited oral (25 min)Progress of homoepitaxial growth technique of thick
β-Ga2O3 layers by halide vapor phase epitaxy
Y. Kumagai1 *, K. Nomura1, K. Goto1,2,3, Q.-T. Thieu1, R.
Togashi1, K. Sasaki2,3,4, K. Konishi4, H. Murakami1, A.
Kuramata2,3, S. Yamakoshi2,3, B. Monemar1,5, A.
Koukitu1, M. Higashiwaki4
1
Tokyo University of Agriculture and Technology, Japan
2
Tamura Corporation, Japan, 3Novel Crystal Technology,
Inc., Japan, 4National Institute of Information andCommunications Technology, Japan, 5Linköping
University, Sweden
10:35
Tu1-G04-2
Oral (15 min)Epitaxial Growth of ε-Ga2O3
F. Boschi1,2 *, M. Bosi2, C. Ferrari2, E. Buffagni2, R.
Fornari1,21Parma University, Italy, 2IMEM-CNR Institute, Italy
10:50
Tu1-G04-3
Oral (15 min)Growth of nonpolar Zn1-xMgxO films with high Mg
content (0.45<x<0.90) on LiGaO2 (100) substrate bymolecular beam epitaxy
T. Yan1 *, L. Chang2, N. Ye1, J. Wang1
1
Fujian Institute of Research on the Structure of Matter,
Chinese Academy of Sciences, China, 2National Sun
Yat-Sen University, Taiwan
11:05
Tu1-G04-4
Oral (15 min)16

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
MBE growth of HgCdTe infrared materials on GaSb
substrates for applications in next generation
infrared detectors
R. Gu*, I. Madni, W. Lei, J. Antoszewski, M. Martyniuk,
L. Faraone
The University of Western Australia, Australia
11:20
Tu1-G04-5
Oral (15 min)Investigation of MBE grown polycrystalline CdTe
films on the Medipix readout chip
S. Schütt*, A. Vogt, K. Frei, F. Fischer, M. Fiederle
Albert-Ludwigs University, Germany
11:35
Tu1-G04-6
Oral (15 min)High efficient CdTe solar cells with through-thickness
polycrystalline CdTe thin film
K. Shen, Z. Bai, R. Yang, D. Wang, Q. Li, D. Wang*
University of Science and Technology of China, China
11:50
Tu1-G04-7
Oral (15 min)Enhanced Electrical and Optical Properties of
CdS:Na Thin Films by Photochemical Deposition
V. Nirmal Kumar1,2,3*, R. Suriakarthick3, R.
Gopalakrishnan3, Y. Hayakawa2
1
Graduate School of Science and Technology, 2ResearchInstitute of Electronics, Shizuoka University, Japan,
3
Anna University, India
12:05
Tu1-G04-8
Oral (15 min)A study of growth mechanism of ZnTe epitaxial filmgrown by the technique of Close-space sublimation
G. Zha*, J. Li, S. Xi, Y. Li, K. Cao, Q. Zhao, T. Wang,
W. JieNorthwestern Polytechnical University, China

Tu1-G06
Bulk Crystal Growth
Room: Oral 10
10:10
Tu1-G06-1
Invited oral (25 min)
Bulk GaN growth – new approaches and challenges
M. Boćkowski*
Insitute of High Pressure Physics PAS, Poland
10:35
Tu1-G06-2
Oral (15 min)Study of homoepitaxial non-polar and semi-polar
growth of GaN by HVPE; influence of lateral growthon HVPE-GaN grown in the c-direction
M. Amilusik1,2 *, T. Sochacki1,2, B. Lucznik1,2, M.
Iwinska1, M. Fijalkowski1, I. Grzegory1, M. Bockowski1
1
Institute of High Pressure Physics PAS, Poland,
2
TopGaN Sp z o.o., Poland
10:50
Tu1-G06-3
Oral (15 min)Growth of GaN single crystal by Na flux method
adding nitrogen-doped carbon additives
Z. L. Liu1 *, G. Q. Ren1, 2, X. J. Su1, J. F. Wang1, 2, K.
Xu1, 2
1
Suzhou Institute of Nano-tech and Nano-bionics,
Chinese Academy of Sciences, China, 2Suzhou Nanowin
Science and Technology Co., Ltd., China
11:05
Tu1-G06-4
Oral (15 min)Development of GaN substrate with large diameterand low orientation deviation
T. Yoshida*, T. Kitamura, K. Otaka, M. Shibata
SCIOCS, Japan

11:20
Tu1-G06-5
Oral (15 min)Top seed growth of GaN single crystal by Na flux
methodX. Wu*, H. Hao, Z. Li, S. Fan, Z. Xu
Xi’an Jiaotong University, China
11:35
Tu1-G06-7
Oral (15 min)Numerical analysis of thermal-stress anddislocation-density distributions of large size
multi-crystalline silicon ingot during the seeded
growth process
T. H. T. Nguyen1 *, J.-C. Chen1, C. Hu1, C.-H. Chen2,
Y.-H. Huang2, C.- J. Yang2, H.-W. Lin2
1
National Central University, Taiwan, R.O.C.,
2
Sino-American Silicon Products Inc., Taiwan, R.O.C.
11:50
Tu1-G06-8
Oral (15 min)
Improvement of crystallinity of semi-polar GaN
single crystals by Na-flux point seed method
D. H. Kim*, M. Imanishi, T. Yamada, M. Honjo, K.
Murakami, D. Matuo, H. Imabayashi, M. Maruyama, M.
Imade, M. Yoshimura, Y. Mori
Osaka University, Japan

Tu1-G07
Defect Formation
Room: Oral 5
10:10
Tu1-G07-1
Invited oral (25 min)Integration of diamond with GaN for ultra-highpower electronic devices
M. Kuball*, J. W. Pomeroy, J. Anaya, R. B. Simon, H.
Sun, Y. Zhou, D. Liu
University of Bristol. United Kingdom
10:35
Tu1-G07-2
Invited oral (25 min)Point and extended structural defects in epitaxial andimplanted SiC for power electronics.
C. Ferrari1 *, M. Bosi1, R. Nipoti2, A. Parisini2
1
CNR-IMEM Institute, Italy, 2CNR-IMM Institute of
Bologna, Italy
11:00
Tu1-G07-3
Oral (15 min)
The Generation Mechanism of Stacking Fault inSingle Crystal Diamond under High Pressure andHigh Temperature process
N. Tatsumi1 *, K. Harano1, K. Tamasaku2, H. Sumiya1
1
Sumitomo Electric Industries, LTD, Japan, 2RIKEN
Harima Institute, Japan
11:15
Tu1-G07-4
Oral (15 min)Determination of the Type of Stacking Faults of (111)
HPHT Diamond Single Crystal with a Low DefectDensity by Synchrotron X-ray Topography
S. Masuya1 *, K. Hanada1, T. Moribayashi1, H. Sumiya2,
M. Kasu1
1
Saga University, Japan, 2Sumitomo Electric Industries,
LTD, Japan
11:30
Tu1-G07-5
Oral (15 min)Modeling of Dislocation Dynamics in germanium
Czochralski growth
O. Podkopaev1, V. Artemyev2 *, A. Smirnov2, V.
Mamedov2, A. Sidko2, V. Kalaev2, E. Kravtsova3, A.
Shimansky3
1
JSC Germanium, Russia, 2STR Group, Inc., Russia,

17

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
3Siberian Federal University, Russia

Japan

11:45
Tu1-G07-6
Oral (15 min)
Dislocations and Their Propagation Mechanism in
II-VI Semiconductors
F. Xu*, Y. Xu, L. Xu, G. Zha, T. Wang, W. Jie
State Key Laboratory of Solidification Processing/Key
Laboratory of Radiation Detection Materials andDevices, Northwestern Polytechnical University, China
12:00
Tu1-G07-7
Oral (15 min)Study of low Energy Ion Implant Damage in Single
crystal by Rutherford Backscattering
Spectrometry-Channeling
G. R. Umapathy*, S. Ojha, A. Das
Inter university accelerator center, India

Tu1-G10

Tu1-G08
Advanced Growth Technologies
Room: Oral 7
10:10
Tu1-G08-1
Invited oral (25 min)Growth and characterization of single crystal
helimagnetic oxides
R. Fittipaldi1, V. Granata1, L. Rocco1, A. Ubaldini1,
A.Vecchione1 *, G. Balakrishnan2, M. Ciomaga Hatnean2,
M. R. Lees2
1
Università di Salerno, Italy, 2University of Warwick,United Kingdom
10:35
Tu1-G08-2
Invited oral (25 min)Preparation of iron-based pnictide and chalcogenide
crystals for the studies of properties
Athena S. Sefat*
Oak Ridge National Laboratory, USA
11:00
Tu1-G08-3
Invited oral (25 min)Phase transitions induced byoxygen-vacancy-ordering found in a number of oxide
crystals
C.-C. Wang*, C.-M. Lei, W. Ni, P. Liu
Anhui University, China
11:25
Tu1-G08-4
Oral (15 min)Effect on Host during Crystallization - A Potential
New Branch in Crystal Growth Science
R. Radha Perumal*
Anna University, India
11:40
Tu1-G08-5
Oral (15 min)Development of 3 inch Si-doped GaAs crystals by amulti-crucible pulling-down method
M. Jin1,2 *, J. Xu2, S. Fan2, Q. He3
1
Ningbo Institute of Industrial Technology, Chinese
Academy of Sciences, China, 2School of Materials
Science and Engineering, Shanghai Institute ofTechnology, China, 3Kunshan Dingjing Gallium Crystal
Material CO., LTD, China
11:55
Tu1-G08-6
Oral (15 min)Crystal morphology, crystal chemistry andcharge/discharge properties of CaFe2O4 typeNa(Mn1-xFex)2O4 synthesized in high pressure
E. Hirose1 *, Y. Shirako1, K. Niwa1, M. Hasegawa1, R.
Natsui2, K. Nakura2
1
Nagoya University, Japan, 2Panasonic Corporation,

External Fields, Microgravity
Room: Oral 8
10:10
Tu1-G10-1
Invited oral (25 min)
Magnetic Field-Induced Synthesis of Ferromagnetic
Phase
K. Koyama*, Y. Mitsui
Kagoshima University, Japan
10:35
Tu1-G10-2
Invited oral (25 min)Crystal growth under high electric field: a new toolfor new materials design
R. Haumont1,2 *, P. Hicher1, R. Saint-Martin1, X.
Mininger3, P. Berthet1
1
CNRS-UMR8182, Université Paris Sud, France,
2
CNRS-UMR8580, Ecole Centrale Paris, France,
3
SUPELEC, CNRS-UMR 8507, Université Paris Sud,
France
11:00
Tu1-G10-3
Oral (15 min)Crystallization of High-Quality Protein Crystals
using an External Electric Field
H. Koizumi1 *, S. Uda1, K. Fujiwara1, M. Tachibana2, K.
Kojima3, J. Nozawa1
1
Tohoku University, Japan, 2Yokohama City University,
Japan, 3Yokohama Soei University, Japan
11:15
Tu1-G10-4
Oral (15 min)Shear flow suppresses the volume of the nucleationprecursor clusters in lysozyme solutions
P. G. Vekilov1,2 *, M. C. Byington1, M. S. Safari1, J. C.
Conrad1
1
Department of Chemical and Biomolecular Engineering,2
Department of Chemistry, University of Houston, USA
11:30
Tu1-G10-5
Oral (15 min)
Oscillatory Growth of Ice Crystal Observed inSupercooled Water Containing Antifreeze
Glycoprotein
Y. Furukawa1 *, K. Nagashima1, S. Nakatsubo1, H.
Tamaru2, I. Yoshizaki2, T. Shimaoka3, T. Sone4,
E. Yokoyama5, T. Maki6, A. Yamamoto6, H. Asakawa1,
K. Murata1, G. Sazaki1
1
Hokkaido University, Japan, 2Japan Aerospace
Exploration Agency, Japan, 3Japan Space Forum, Japan,
4Japan Manned Space Systems Corporation, Japan,
5
Gakushuin University, Japan, 6Olympus Corporation,
Japan
11:45
Tu1-G10-6
Oral (15 min)Analysis of the Effects of a Rotating Magnetic Fieldon the Growth of Cadmium Zinc Telluride by theTraveling Heater Method under Different Gravity
Conditions
Z. Li1,2 *, J. H. Peterson2, A. Yeckel2, J. J. Derby2
1
Xi'an Jiaotong University, China, 2University of
Minnesota, USA
12:00
Tu1-G10-7
Oral (15 min)Numerical study of the influence of electromagnetic
stirring on the impurities transport in a silicondirectional solidification process
D. Vizman*, A. Popescu

18

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
West University of Timisoara, Romania

Tu1-T07
Materials for Electron Devices
Room: Oral 9
10:10
Tu1-T07-1
Invited oral (25 min)
Magnetically Modulated Heterostructures ofTopological Insulators
M. Kawasaki1,2 *1
QPEC, The University of Tokyo, Japan, 2RIKEN Center
for Emergent Matter Science (CEMS), Japan
10:35
Tu1-T07-2
Invited oral (25 min)Novel MBE Techniques for Complex Oxide-based
Devices
S. Raghavan, T. Schumann, S. Stemmer*
University of California, Santa Barbara, USA
11:00
Tu1-T07-3
Oral (15 min)Atomic Layer Deposition of AlxMg1-xOy Nanolayers
and Their Excellent Surface Passivation for
Crystalline Silicon Solar Cells
H. Lee*, T. Kamioka, D. Zhang, N. Iwata, Y. Ohshita
Toyota Technological Institute, Japan
11:15
Tu1-T07-4
Oral (15 min)Relaxor properties of barium titanate crystals grown
by Remeika method
M. Roth *, E. Tiagunov, E. Dul’kin, E. Mojaev
The Hebrew University of Jerusalem, Israel
11:30
Tu1-T07-5
Oral (15 min)Determination of the most suitable physicochemical
conditions for hexagonal GeO2 growth from hightemperature solution
M. Arzakantsyan1 *, A. Pena1, P. Armand2, P. Papet2,
B. Menaert1
1
University Grenoble Alpes, France, 2Univ Montpellier 2,
France
11:45
Tu1-T07-6
Oral (15 min)Effects of IR irradiation on the transport properties
through deep-level defects in CdZnTe crystals studied
by thermally stimulated current
L. Xu1,2 *, X. Fu1,2, G. Zha1,2, T. Wang1,2, Y. Xu1,2, W.
Jie1,2
1
State Key Laboratory of Solidification Processing, 2Key
Laboratory of Radiation Detection Materials andDevices, Ministry of Industry and Information
Technology, Northwestern Polytechnical University,
China
12:00
Tu1-T07-7
Oral (15 min)Crystal growth of Mg2Si for IR-detector
T. Tokairin1, J. Ikeda2, H. Udono3
1
Graduate School of materials science, Ibaraki
University, Japan, 2Shinko Manufacturing Co., Ltd.,
Japan, 3Department of electrical and electronicengineering, Ibaraki University, Japan

Properties of GaN(0001) Surface in MOVPE andHVPE Ambient
P. Kempisty*, P. Strak, K. Sakowski, S. Krukowski
Institute of High Pressure Physics, PAS, Poland
10:25
Tu1-T09-2
Oral (15 min)In-situ curvature and thickness monitoring of GaN
during hydride vapor phase epitaxy
J. Friedrich1,2 *, C. Schröter2, E. Meissner1,2, G. Leibiger3,
F. Habel3, B. Weinert3, S. Eichler3
1
Fraunhofer IISB, Germany, 2Fraunhofer THM,
Germany, 3Freiberger Compound Materials, Germany
10:40
Tu1-T09-3
Oral (15 min)Highly conductive HVPE-GaN grown on native seeds
T. Sochacki1,2 *, M. Iwinska1, B. Lucznik1,2, M.
Amilusik1,2, M. Fijalkowski1, I. Grzegory1, M.
Bockowski1
1
Institute of High Pressure Physics PAS, Poland,
2
TopGaN Sp z o.o., Poland
10:55
Tu1-T09-4
Oral (15 min)Growth of HVPE-GaN on Advanced Substrates
obtained by Smart CutTM
M. Iwinska1 *, M. Amilusik1,2, M. Fijalkowski1, T.
Sochacki1,2, B. Lucznik1,2, A. Nowakowska-Siwinska2, I.
Grzegory1, E. Guiot3, R. Caulmilone3, M. Seiss4, T.
Mrotzek4,M. Bockowski1,2
1Institute of High Pressure Physics PAS, Poland,
2
TopGaN Sp z o.o., Poland, 3Soitec, France, 4PLANSEESE, Austria
11:10
Tu1-T09-5
Oral (15 min)Annealing effect on threading dislocations in a GaN
grown on Si substrate
H. Kobayashi1, H. Iwata1, H. Saka1, N. Sawaki1 *, M.
Irie2, Y. Honda2, H. Amano2
1
Aichi Institute of Technology, Japan, 2Nagoya
University, Japan
11:25
Tu1-T09-6
Oral (15 min)Characterization of GaN layer using THz
ellipsometry and its verification by cross-sectional
observation
K. Tachi1 *, S. Asagami1, T. Fujii1,3 , T. Nagashima2, T.
Iwamoto3, Y. Sato3, N. Morita4, R. Sugie4, S. Kamiyama5,
T. Araki1, Y. Nanishi1
1
Ritsumeikan University, Japan, 2Setsunan University,
Japan, 3Nippo Precision Co., Ltd, Japan, 4Toray
Research Center, Inc, Japan, 5Meijo University, Japan
11:40
Tu1-T09-7
Invited oral (25 min)
HVPE-GaN growth – on the road to bulk GaN andhigh quality wafers
M. Boćkowski*
Insitute of High Pressure Physics PAS, Poland
Lunch
Tuesday afternoon, 9 August, 12:05
Shirotori Hall

Tu1-T09
Nitride Semiconductors
Room: Oral 1
10:10
Tu1-T09-1
Oral (15 min)
Thermodynamic and Ab initio Analysis of the

IOCG Executive Committee Meeting
Tuesday afternoon, 9 August, 12:10
Bldg. 4 Conference Room 431

19

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Session Tu2
Tuesday afternoon, 9 August, :13:40
G01, G02, G03, G04, G06, G07, G08, J01, T07, T09

Tu2-G01
Fundamentals of Nucleation and Crystal Growth
Room: Oral 6
13:40
Tu2-G01-1
Invited oral (25 min)Modeling Solid-State Wetting and Dewetting
A. Tripathi1, M. Ignacio1, A. Chame2, P. Smereka, Y.
Saito3, O. Pierre-Louis1 *1
Université de Lyon, France, 2Univ. Fed. Fluminense,
Brazil, 3Keio University, Japan
14:05
Tu2-G01-2
Oral (15 min)Inhibition of Crystal Growth: Faceting Diagram for
Sticky Steps
Noriko Akutsu*
Osaka Electro-Communication University, Japan
14:20
Tu2-G01-3
Oral (15 min)Instability of step meandering caused by nucleation
during step-flow growth on vicinal 3C-SiC (0001)
surfaces
Y. Li, X.-J. Chen*, J. Su
Xi’an Jiaotong University, China
14:35
Tu2-G01-4
Oral (15 min)
Evolution of surface morphologies investigated by 2D
cellular automata simulations of crystal growth
F. Krzyżewski1 *, M. Załuska-Kotur1, H. Popova2, A.
Krasteva3, V. Tonchev2
1
Institute of Physics, PAS, Poland, 2 Institute of Physical
Chemistry, 3 Institute of Electronics, Bulgarian Academyof Sciences, Bulgaria
14:50
Tu2-G01-5
Oral (15 min)Relation between the period of protrusions in a
comb-like step pattern and the velocity of adatom
source moving in front of the step
M. Sato1 *, M. Uwaha2
1
Kanazawa University, Japan, 2Nagoya University,
Japan
15:05
Tu2-G01-6
Oral (15 min)
Thermo-Solutal Growth of an Anisotropic Dendritein the Presence of Convection
D. V. Alexandrov1 *, P. K. Galenko2
1
Ural Federal University, Russia,
2
Friedrich-Schiller-Universität Jena, Germany
15:20
Tu2-G01-7
Oral (15 min)Threshold sensitive dynamical transition in crystal
growth mode induced by fluidity of thin solution film
Y. Yamazaki*, H. Yoshino, M. Kikuchi, S. Kashiwase
Waseda University, Japan
15:35
Tu2-G01-8
Oral (15 min) *Late News
Size evolution of (n×3) reconstructed areas on
growing InAs-GaAs(001) surface
T. Konishi1 *, S. Tsukamoto1, T. Ito2, T. Akiyama2, R.
Kaida2
1
National Institute of Technology, Anan College, Japan,
2
Mie University, Japan

Tu2-G02

Surfaces and Interfaces
Room: Oral 3
13:40
Tu2-G02-1
Invited oral (25 min)Dependence of Hydration Structure above Calcite
Surface on Mg2+ Concentration Probed by FM-AFM
Y. Araki1 *, H. Onishi2, K. Kobayashi3, H. Yamada1
1
Graduate School of Engineering, Kyoto University,
Japan, 2Kobe University, Japan, 3The Hakubi Center for
Advanced Research, Kyoto University, Japan
14:05
Tu2-G02-2
Oral (15 min)Crystal orientation dependence of precipitate
structure of electrodeposited Li metal on Cu current
collectors
K. Ishikawa1 *, Y. Ito2, S. Harada1, 3, M. Tagawa1, 3, T.
Ujihara1, 3
1
Department of Materials Science and Engineering,2
Department of Mechanical Science and Engineering,
3
IMaSS, Nagoya University, Japan
14:20
Tu2-G02-3
Oral (15 min)
Creeping: an efficient way to determine theanticaking ability of additives for sodium chloride
E. R. Townsend1 *, F. Swennenhuis1, W. J. P. van
Enckevort1, J. A.M. Meijer2, E. Vlieg1
1
Radboud University Nijmegen, The Netherlands, 2Akzo
Nobel Industrial Chemicals, Salt and Crystallization,
The Netherlands
14:35
Tu2-G02-4
Oral (15 min)Specific surface free energy of the fluorite andperiodic bond chain theory
A. Tsukagoshi*, T. Suzuki
Shinshu University, Japan
14:50
Tu2-G02-5
Oral (15 min)
Negative step free energy on ruby single crystal
A. Endou*, T. Suzuki
Shishu Univercity, Japan
15:05
Tu2-G02-6
Oral (15 min)Anti-Freezing/Icing Energetic of Superhydrophobic
Surfaces
Z. Zhang*, X.-Y. Liu
Xiamen University, China/National University ofSingapore, Singapore.
15:20
Tu2-G02-7
Oral (15 min)Direct Visualization of Quasi-Liquid Layers on Ice
Crystal Surfaces Induced by Hydrogen Chloride Gas
K. Nagashima1*, G. Sazaki1, T. Hama1, H. Asakawa1,2,
K. Murata1, Y. Furukawa1
1
Hokkaido University, Japan, 2Present address: Anan
National College of Technology, Japan

Tu2-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
Room: Oral 2
13:40
Tu2-G03-1
Invited oral (25 min)Temperature programmed synthesis ofsingle-crystalline quasi free-standing graphene onNi(111)K. N. Eltsov*, S. L. Kovalenko, T. V. Pavlova, B. V.
Andryushechkin

20

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
A. M. Prokhorov General Physics Institute RAS, Russia
14:05
Tu2-G03-2
Oral (15 min)Graphene quantum dots prepared from graphenehydrogels
H. Y. Qin1 *, Y. H. Jin1, Y. J. Cho2, C. M. Shin2, C. G.
Lee1,2, T. S. Kim1,2
1
SKKU Advanced Institute of Nano Technology, 2Schoolof Mechanical Engineering, Sungkyunkwan University,
Korea
14:20
Tu2-G03-3
Oral (15 min)Effects of fabrication methods of Al2O3 buffer layers
on single-walled carbon nanotube growth from Rh
catalysts by alcohol gas source method
H. Kiribayashi1 *, S. Ogawa1, A. Kozawa1, T.Saida2, S.
Naritsuka1, T. Maruyama1,21
Dept. Materials Science and Engineering, 2Dept.
Applied Chemistry, Meijo University, Japan
14:35
Tu2-G03-4
Oral (15 min)Dispersing Perylene Diimide/SWCNT Hybrids:
Structural Insights at the Molecular Level and
Fabricating Advanced Materials
H. Weissman1 *, Y. Tsarfati1, V. Strauss2, S. Kuhri2, E.
Krieg1, E. Shimoni3, J. Baram1, D. M. Guldi2, B.
Rybtchinski1
1
Department of Organic Chemistry, Weizmann Instituteof Science, Israel, 2Friedrich-Alexander-Universität
Erlangen-Nürnberg, Germany, 3Department of Chemical
Research Support, Weizmann Institute of Science, Israel
14:50
Tu2-G03-5
Oral (15 min)Solution Growth of ZnO Nanorods on Patterned
Substrates
J. Grym*, R. Yatskiv, J. Vaniš, I. Nahálka, A. Schenk
Institute of Photonics and Electronics of the CAS, Czech
Republic
15:05
Tu2-G03-7
Oral (15 min)Synthesis and Applications of Defect-Rich
Hierarchical ZnO Architectures
J. Wang*, Y. Xia, R. Chen, L. Xiang
Tsinghua University, China
15:20
Tu2-G03-8
Oral (15 min)Low temperature deposition of gallium oxide bymetalorganic chemical vapor deposition
Y. Takiguchi*, S. Miyajima
Tokyo Institute of Technology, Japan

Tu2-G04
Thin Films and Epitaxial Growth
Room: Oral 4
13:40
Tu2-G04-1
Invited oral (25 min)Epitaxial Engineered Substrates within Silicon
CMOS Process Flows to Enable Future Integrated
Circuits
E. A. Fitzgerald1,2 *1Singapore MIT Alliance for Research and Technology,
Singapore, 2MIT, USA
14:05
Tu2-G04-2
Invited oral (25 min)In situ control over modification of Si(100) andsingle-domain GaP heteroepitaxy
O. Supplie, M. M. May, A. Paszuk, A. Nägelein, P.

Kleinschmidt, S. Brückner, T. Hannappel*
Technische Universität Ilmenau, Germany
14:30
Tu2-G04-3
Oral (15 min)Developing growth method for heterostructures
A. Kushkhov, O. Rabinovich*, S. Legotin, S. Didenko, I.
Fedorchenko, Yu. Osipov
NUST MISiS, Russia
14:45
Tu2-G04-4
Oral (15 min)Ge thin film growthon Si and SiO2 using t-C4H9GeH3
R. Katayama1 *, N. Kojima1, K. Suda2, H. Machida3, M.
Ishikawa3, H. Sudo3, A. Ogura2, Y. Ohshita1
1
Toyota Technological Institute, Japan, 2Meiji University,
Japan, 3Gas-Phase Growth Ltd., Japan
15:00
Tu2-G04-5
Oral (15 min)
Strain Relaxation and Phase Separation during
growth of InGaAs/GaAs(001)
R. Deki1, T. Sasaki2, M. Takahasi1,2 *1University of Hyogo, Japan, 2National Institutes for
Quantum and Radiological Science and Technology,
Japan
15:15
Tu2-G04-6
Oral (15 min)Enhanced Incorporation of P into Tensile-Strained
GaAs1-yPy Layers Grown by Metal-Organic Vapor
Phase Epitaxy at Very Low Temperatures
Y. Guan1, K. Forghani2, K. Schulte2, S. E. Babcock1, L. J.
Mawst3, T. F. Kuech2 *1
Dept. of Materials Science and Engineering, 2Dept. ofChemical and Biological Engineering, 3Dept. ofElectrical and Computer Engineering, University of
Wisconsin – Madison, USA
15:30
Tu2-G04-7
Oral (15 min)Effect of substrate on the structural and magnetic
properties of dc sputtered Co2FeSi full Heusler alloy
thin films
J. Kumar1 *, R. Mohankumar1, M. Manivel Raja2
1
Anna University, India, 2Defence MetallurgicalResearch Laboratory, India

Tu2-G06
Bulk Crystal Growth
Room: Oral 10
13:40
Tu2-G06-1
Oral (15 min)Intermetallic compounds for heterogeneous catalysis
grown by the Czochralski method fromhigh-temperature solutions
P. Gille1 *, M. Hahne1, J. Schwerin1, M. Wencka2
1
Ludwig-Maximilians-Universität München, Germany,
2
Institute of Molecular Physics, Polish Academy of
Sciences, Poland
13:55 Tu2-G06-2
Oral (15 min)
Inclined Rotary Bridgman method for forced
convection in growing FeSb2 and CoSb3 from Sb-richsolutionsM. Pillaca1, W. Miller2, P. Gille1 *1
Ludwig-Maximilians-Universität München, Germany,
2
Leibniz Institute for Crystal Growth (IKZ), Germany
14:10
Tu2-G06-3
Oral (15 min)
High-pressure and ambient gas effect on the opticalfloating zone crystal growth of novel oxide and

21

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
intermetallic compounds
P. Sass*, R. Schöndube
ScIDre GmbH –Scientific Instruments Dresden, Germany
14:25
Tu2-G06-5
Oral (15 min)Investigations on growth and physicalcharacterizations on CdGa2Se4 single crystal byvertical Bridgman method
P. Vijayakumar*, M. Magesh, P. Ramasamy
SSN College of Engineering, India
14:40
Tu2-G06-6
Oral (15 min)Investigations on synthesis, growth and physicalcharacterizations on CdIn2S2Se2 single crystal byvertical Bridgman method
P. Vijayakumar*, M. Magesh, P. Ramasamy
SSN College of Engineering, India
14:55
Tu2-G06-7
Oral (15 min)Single crystal growth of ZnAl2O4 by the micro-pulling
down method
K. Kamada1,2 *, Y. Shouji2,3, S. Kurosawa1,3, Y.
Yokota1,Y. Ohashi3, V. V. Kochurikhin2,4, A.
Yoshikawa1,2,3
1
New Industry Creation Hatchery Center, Tohoku
University, Japan, 2C&A corporation, Japan, 3Institutefor Material Reseach, Tohoku University, Japan,
4
General Physics Institute, Russian Academy of Sciences,
Russia

Tu2-G07
Defect Formation
Room: Oral 5
13:40
Tu2-G07-1
Invited oral (25 min)
Structural and optical properties of dislocations ingroup III-nitrides
M. Albrecht1 *, L. Lymperakis2, J. Neugebauer2
1
Leibniz-Institut für Kristallzüchtung, Germany,2
Max-Planck-Institut für Eisenforschung, Germany
14:05
Tu2-G07-2
Oral (15 min)In situ stoichiometry control - an old topic thatremains current
P. Rudolph*
Crystal Technology Consulting, Germany
14:20
Tu2-G07-3
Oral (15 min)Donor deactivating defects above equilibrium doping
limit in GaAs:Te,Ge and GaAs:Te studied byannealing and Hall effect under pressure
T. Slupinski*
University of Warsaw, Poland
14:35
Tu2-G07-4
Oral (15 min)Analysis of Second-Phase Particle Migration via
Temperature Gradient Zone Melting
K. Wang*, J. J. Derby
University of Minnesota, USA
14:50
Tu2-G07-5
Oral (15 min)Studies on the deep-level defects in CdZnTe crystals
grown by Travelling Heater Method
B. Zhou*, W. Jie, T. Wang, L. Xu, F. Yang, L. Yin, X.
Fu
Northwestern Polytechnical University, China
15:05
Tu2-G07-6
Oral (15 min)Defect structure of ZnGeP2 nonlinear opticalcompoundC. Yang1, A. O. Okunev2, G. A. Verozubova3 *1
Harbin Institute of Technology, China,
2
Yaroslav-the-Wise Novgorod State University,Russia,
3
Institute of Monitoring of Climatic and Ecological
System SB RAS, Russia

Tu2-G08
Advanced Growth Technologies
Room: Oral 7
13:40
Tu2-G08-1
Invited oral (25 min)Recent developments on piezoelectric single crystals
S.-J. Zhang1,2 *, F. Li2, F. Yu3, J. Luo4, T. R. Shrout2
1
University of Wollongong, Australia, 2Pennsylvania
State University, USA, 3Shandong University, China,
4
TRS Technologies Inc., USA
14:05
Tu2-G08-2
Invited oral (25 min)
Fabrication and Application of Perovskite Single
Crystals Doped with Donor or Acceptor: BaTiO3 and
PMN-PT [Pb(Mg1/3Nb2/3)O3-PbTiO3]
H. –T. Oh1, J. –Y. Lee1, H. –Y. Lee1,2 *1Ceracomp Co., Ltd., Korea, 2Sunmoon University,
Korea
14:30
Tu2-G08-3
Oral (15 min)Single Crystal Growth and Characterization of
Monoclinic BIBO Crystalsfor PiezoelectricApplication
F. F. Chen1 *, F. P. Yu1, H. W. Wang1, X. F. Cheng1, Q.
M. Lu2, X. Zhao1
1State Key Laboratory of Crystal Materials, 2School ofChemistry and Chemical Engineering, Shandong
University, China
14:45
Tu2-G08-4
Oral (15 min)Orientation-Controlled Growth of The LiNi0.5Mn1.5O4
Crystal Layers by Using Flux-coating Approaches
and Studies of Their Electrochemical Properties
N. Zettsu1,2 *, T. Imabori2, Y. Saito2, K. Teshima1,2
1Center for Energy and Environmental Science,2
Department of Chemistry & Materials Engineering,
Faculty of Engineering, Shinshu University, Japan
15:00
Tu2-G08-5
Oral (15 min)Single crystal growth from light, volatile, and reactive
materials using lithium and calcium flux
A. Jesche1 *, M. Fix1, P. Höhn2, P. C. Canfield3
1
Augsburg University, Germany, 2Max Planck Institutefor Chemical Physics of Solids, Germany, 3Iowa State
University, USA
15:15
Tu2-G08-6
Oral (15 min)Polymeric Additives Induced Change in Crystal
Habit of 2,6-diamino-3,5-dinitropyrazine-1-oxide
X.-Q. Zhou*, Q. Zhang, R.-P. Bu, H.-Z. Li
Institute of Chemical Materials, China Academy ofEngineering Physics, China

Tu2-J01
Growth Simulation and Practice
Room: Oral 8
13:40
Tu2-J01-1
Invited oral (25 min)22

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Advanced Modeling of MOVPE Processes
E. V. Yakovlev*, S. Yu. Karpov, A. V. Lobanova, A. S.
Segal, R. A. Talalaev
STR Group – Soft-Impact Ltd., Russia
14:05
Tu2-J01-2
Oral (15 min)Purge and geometry improvement in MOCVD
vertical reactor to prevent parasitic growth on thereactor wall by numerical model
W.-J. Lin*, C. Hu, J.-C. Chen
National Central University, Taiwan
14:20
Tu2-J01-3
Oral (15 min)Computational fluid dynamic approach coupled withthermodynamic analysis of driving force fordeposition in GaN MOVPE
K. Yoshimatsu1 *, N. Okamoto2, Y. Kangawa3, K.
Kakimoto3, K. Shiraishi1
1
Institute of Materials and Systems for Sustainability,
2Center for Computational Science, Nagoya University,
Japan, 3Kyushu University, Japan
14:35
Tu2-J01-4
Oral (15 min)Numerical investigation of high purity silica growth
by CVD technique
Y.-S. Huang1, H. Zhang2, L. Zheng1 *1School of Aerospace, 2Department of Engineering
Physics, Tsinghua University, China
14:50
Tu2-J01-5
Oral (15 min)3D modeling of dopant transport in gas and melt infloating zone growth of silicon crystals
A. Sabanskis*, K. Surovovs, J. Virbulis
University of Latvia, Latvia
15:05
Tu2-J01-6
Oral (15 min)A niching genetic algorithm applied to optimize a
SiC-bulk crystal growth system
J. Su1 *, X.-J. Chen1, Y. Li1, M. Pons2,3, E. Blanquet2,3
1
Xi’an Jiaotong University, China, 2SIMaP, University ofGrenoble Alps, France, 3SIMaP, CNRS, France
15:20
Tu2-J01-7
Oral (15 min)Axial inflection point temperature profiles for theengineering of convex crystal growth interfaces in
Bridgman systems
J. H. Peterson1 *, D. Perrodin2, G. A. Bizarri2, E. D.
Bourret2, J. J. Derby1
1
University of Minnesota, USA, 2Lawrence Berkeley
National Laboratory, USA

Tu2-T07
Materials for Electron Devices
Room: Oral 9
13:40
Tu2-T07-1
Invited oral (25 min)
Strain engineering for electronic devices: modelingcapabilities
S. Yu. Karpov*, M. E. Rudinsky, A. V. Lobanova, E. V.
Yakovlev, R. A. Talalaev
STR Group – Soft-Impact, Ltd., Russia
14:05
Tu2-T07-2
Oral (15 min)Growth and Characterization of Ca3TaGa3-xAlxSi2O14
Single Crystals for High Temperature Piezoelectric
Sensors
X. W. Fu1,2 *, E. G. Víllora1, Y. Kitanaka3, Y. Noguchi3,

M. Miyayama3, K. Shimamura1,2, N. Ohashi1,4National Institute for Materials Science, Japan,
2
Waseda University, Japan, 3The University of Tokyo,
Japan, 4Tokyo Institute of Technology, Japan
14:20
Tu2-T07-3
Oral (15 min)Poling Induced Phase Transitions and Shift ofMorphotropic Phase Boundary in PMN-xPT Single
Crystals
C. Xu1 *, Q. Li1, Q.-F. Yan1, Y.-L. Zhang2, X.-C. Chu2
1
Department of Chemistry, 2State Key Laboratory of New
Ceramics and Fine Processing, Tsinghua University,
China
14:35
Tu2-T07-4
Oral (15 min)Growth and characteristics of β-Ga2O3 single crystals
by vertical Bridgman method in ambient air (II)E. Ohba1 *, T. Kobayashi1, J. Yanagisawa1, C.
Miyagawa1, Y. Nakamura1, K. Hoshikawa2
1Fujikoshi Machinery Corp., Japan, 2Shinshu University,
Japan
14:50
Tu2-T07-5
Oral (15 min)The growth, thermal, dielectric, elastic andpiezoelectric properties of fresnoite Ba2TiSi2O8 single
crystals
C. Y. Shen1 *, H. J. Zhang2, J. Y. Zhang2
1
Qufu Normal University, China, 2Shandong University,
China
15:05
Tu2-T07-6
Oral (15 min)Growth, electrical and mechanical characterization ofgehlenite based solid solution single crystals
H. Takeda1 *, K. Yoshida1, H. Okudera2, L.
Kheirreddine3, T. Hoshina1, T. Tsurumi1
1
Tokyo Institute of Technology, Japan, 2Kanazawa
University, Japan, 3University of Lyon, France
1

Tu2-T09
Nitride Semiconductors
Room: Oral 1
13:40
Tu2-T09-1
Invited oral (25 min)Growth of Bulk GaN Crystals by the Na-Flux Point
Seed Technique
M. Imade*, M. Imanishi, M. Maruyama, M. Yoshimura,Y. Mori
Osaka University, Japan
14:05
Tu2-T09-2
Oral (15 min)Interface and dislocation structures in Na flux GaN
grown on MOCVD-GaN
S. Takeuchi1 *, H. Asazu1, Y. Mizuta1, M. Imanishi2, M.
Imade2, Y. Mori2, A. Sakai1
1Graduate School of Engineering Science, 2Graduate
School of Engineering, Osaka University, Japan
14:20
Tu2-T09-3
Oral (15 min)Enhancement of Lateral Growth of the GaN Crystal
with Extremely Low Dislocation Density during the
Na-flux Growth on a Point Seed
M. Hayashi*, M. Imanishi, T. Yamada, D. Matsuo, K.
Murakami, M. Maruyama, M. Imade, M. Yoshimura, Y.
MoriOsaka University, Japan
14:35
Tu2-T09-4
Oral (15 min)23

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Lattice-Matched Growth of AlInGaN/GaN
heterostructures Grown by MOCVD
R. Loganathan1 *, K. Prabakaran1, B. Kuppulingam1, S.
Surender1, S. Pradeep1, S. Sankaranarayanan1, S. Singh1,
K. Baskar1,2
1Anna University, India, 2Manonmaniam Sundaranar
University, India
14:50
Tu2-T09-5
Oral (15 min)Metalorganic vapor phase epitaxy of pseudomorphic
m-plane Al1-xInxN alloy films on a low defect density
m-plane GaN substrate
S. F. Chichibu*, K. Kojima, Y. Yamazaki, K. Furusawa
Tohoku University, Japan
15:05
Tu2-T09-6
Oral (15 min)Stable Structure of GaN(0001) under the OVPE
Growth Conditions
T. Kawamura1,2 *, A. Kitamoto2, M. Imade2, M.
Yoshimura2, Y. Mori2, Y. Morikawa2, Y. Kangawa3, K.
Kakimoto3
1
Mie University, Japan, 2Osaka University, Japan,
3
Kyushu University, Japan
15:20
Tu2-T09-7
Oral (15 min)Study on nitridation of α-(AlGa)2O3 using rf plasma
for AlGaN growth
A. Buma1 *, N. Masuda1, T. Araki1, Y. Nanishi1, M.
Oda2, T. Hitora2
1
Ritsumeikan University, Japan, 2FLOSFIA, Japan
15:35
Tu2-T09-8
Oral (15 min)
Evaluation of mechanical properties for w-BN using
nanoindentation
M. Deura1 *, K. Kutsukake1, Y. Ohno1, I. Yonenaga1, T.
Taniguchi2
1
Tohoku University, Japan, 2National Institute forMaterials Science, Japan
Coffee break
Tuesday afternoon, 9 August, 15:40
Event Hall, Shirotori Hall
Session Tu3
Tuesday afternoon, 9 August, 16:10
G01, G03, G04, G05, G06, G07, J01, T01, T06, T09

Tu3-G01
Fundamentals of Nucleation and Crystal Growth
Room: Oral 6
16:10
Tu3-G01-1
Invited oral (25 min)Crystallization Routes to Single Chirality: Tricks andMechanisms
E. Vlieg*, H. Meekes, R .R. E. Steendam, L. Spix, A. H.
J. Engwerda, F. P. J. T. Rutjes
Radboud University, The Netherlands
16:35
Tu3-G01-2
Oral (15 min)Role of chiral clusters in the chirality conversion bytemperature cycling
H. Katsuno1 *, M. Uwaha2
1
Ritsumeikan University, Japan, 2Nagoya University,
Japan

16:50
Tu3-G01-3
Oral (15 min)
Evolution of grains during solidification of silicon –attempts of numerical simulations for anunderstanding
W. Miller1 *, X. F. Qi1,2, A. Popescu3
1
Leibniz Institute of Crystal Growth (IKZ), Germany,2
Xi’an Jiaotong University, China, 3West University ofTimisoara, Romania
17:05
Tu3-G01-4
Oral (15 min)A fundamental analysis of particle engulfment
dynamics during crystal growth
Y. Tao, J. J. Derby*
University of Minnesota, USA
17:20
Tu3-G01-5
Oral (15 min)
Oxygen Partitioning during Growth of Oxide
Materials from Melt
S. Uda*, C. Koyama, J. Okada
Tohoku University, Japan
17:35
Tu3-G01-6
Oral (15 min)Control of solute boundary layer for the growth oflarge size KDP crystal
K. Hu1 *, L. Zheng1, H. Zhang2
1
School of Aerospace Engineering, 2Department ofEngineering Physics, Tsinghua University, China
17:50
Tu3-G01-7
Oral (15 min)Modelling and experiments for the convecto-diffusive
removal of impurities from the solidification front
J. Altenberend1,2 *, Y. Delannoy1, A. Nehari1,2, G.
Chichignoud, K. Zaidat1
1
Université Grenoble Alpes, France, 2CNRS Alpes,
France18:05
Tu3-G01-8
Oral (15 min)Growth Kinetics and Bulk Growth of Inversely
Soluble Lithium Sulfate Monohydrate Single Crystals
and its Optical Characterization
A. Silambarasan*, P. Rajesh, P. Ramasamy
SSN College of Engineering, India

Tu3-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
Room: Oral 2
16:10
Tu3-G03-1
Invited oral (25 min)Epitaxial Ferromagnetic Semiconductor
Heterostructures: Control of Ferromagnetism by
Wavefunction Engineering
M. Tanaka1,2 *, L. Duc Anh1, P. Nam Hai1,3
1
The University of Tokyo, Japan, 2Tokyo Institute ofTechnology, Japan
16:35
Tu3-G03-2
Oral (15 min)
Fabrication and Dispersion of Fe3O4 Nanopowderusing Co-Precipitation Method for Magnetic Fluid
Preparation
J.-K. Park*, S.-B. Baeg, Y.-I. Song, S.-J. Suh
Sungkyunkwan University, Korea
16:50
Tu3-G03-3
Oral (15 min)
Elucidating Reaction Mechanisms of theHydrothermal Growth of Phase-Pure,
Nanostructured Bismuth Ferrites

24

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
A. R. Goldman*, J. L. Fredricks, L. A. Estroff
Cornell University, USA
17:05
Tu3-G03-4
Oral (15 min)
Structural, magnetic and electrical properties of Tb
and Co co-substituted multiferroic BiFeO3
nanoparticles
D. Rajan Babu*, M. Gowrishankar
VIT University, India
17:20
Tu3-G03-5
Oral (15 min)VO2 nano-composite coatings for samrt windows:
preparation and optical performances optimization
Z. Chen*, Y.-F. Gao
Shanghai University, China
17:35
Tu3-G03-6
Oral (15 min)Hydrothermal Synthesis of Rutile–type Titania with
Uncommon Shapes
M. Kobayashi*, S. Lee, H. Kato, M. Kakihana
Tohoku University, Japan

Tu3-G04
Thin Films and Epitaxial Growth
Room: Oral 4
16:10
Tu3-G04-1
Invited oral (25 min)
600-nm-emission InGaN-based multiple quantum
wells with strain-compensating AlGaN barrier
D. Iida*, K. Akitaya, S. Lu, K. Ohkawa
Tokyo University of Science, Japan
16:35
Tu3-G04-2
Oral (15 min)
HVPE of aluminum nitride, film evaluation andmultiscale modeling of the epitaxial growth process.
M. Pons1,2 *, M. Chubarov1,2, J. Su3, R. Boichot1,2, F.
Mercier1,2, E. Blanquet1,2, G. Gusti4, D. Pique4
1
SIMaP, University of Grenoble Alps, France, 2SIMaP,
CNRS, France, 3Xi'an Jiaotong University, China,
4
SIL’TRONIX-ST, France
16:50
Tu3-G04-3
Oral (15 min)Studies on High Temperature Vapor Phase Epitaxy(HTVPE) of GaN
T. Schneider1 *, G. Lukin1, M. Barchuk2, F.
Zimmermann3, E. Niederschlag1, O. Pätzold1, M. Stelter1
1
Institut für NE-Metallurgie und Reinststoffe, TU
Bergakademie Freiberg, Germany, 2Institut fürWerkstoffwissenschaft, TU Bergakademie Freiberg,
Germany, 3Institut für Angewandte Physik, TU
Bergakademie Freiberg, Germany
17:05
Tu3-G04-4
Oral (15 min)Quantum Chemical Study on Gas Reaction Path in
GaN/AlN MOVPE Growth
R. Zuo1 *, B. L. Wang1, S. C. Meng2, P. Chen3, R.
Zhang3
1
School of Energy and Power, 2School of Chemistry andChemical Engineering, Jiangsu University, China,
3
Nanjing University, China
17:20
Tu3-G04-5
Oral (15 min)Effect of Patterned-Si Substrate on Crystalline
Quality of AlN Template
B. Tinh Tran1*, H. Hirayama1, N. Maeda1, M. Jo1,
D. Inoue2, T. Kikitsu2
1
Quantum Optodevice Laboratory, 2Materials

Characterization Support Unit, Center for Emergent
Matter Science, RIKEN, Japan
17:35
Tu3-G04-6
Oral (15 min)Study of nucleation and growth evolution of BN thinfilms
A. Henry1 *, L. Souqui1, M. Chubarov2, H. Pedersen1, H.
Högberg1,
1
Linköping University, Sweden, 2SiMAP, France
17:50
Tu3-G04-7
Oral (15 min)Crystal growth of ultrathin films of NbN andNb1-xTixN
N. Tsavdaris1,2, G. Renou1,2, E. Sarigiannidou3,4, S.
Coindeau1,2, E. Blanquet1,2, F. Mercier1,2 *1SIMaP, University of Grenoble Alps, France, 2SIMaP,
CNRS, France, 3LMGP, University of Grenoble Alps,
France, 4LMGP, CNRS, France
18:05
Tu3-G04-8
Oral (15 min)
CFD Analysis of the Coupling Effect of Susceptor
Rotation and Wafer Rotation on the Uniformity of
HVPE-GaN Thin Film
X.-F. Han1,2 *, Kyung-Woo Yi1
1
Seoul National University, Korea, 2Kyushu University,
Japan

Tu3-G05
Organic and Biological Crystallization
Room: Oral 3
16:10
Tu3-G05-1
Invited oral (25 min)On the Role of Pre-Nucleation Clusters in
Crystallization
D. Gebauer
University of Konstanz, Germany
16:35
Tu3-G05-2
Invited oral (25 min)Bio-crystallization from highly heterogeneous
solutionsA. E. S. Van Driessche
Univ. Grenoble Alpes, CNRS, France
17:00
Tu3-G05-3
Oral (15 min)
Mechanisms of inhabitation of hematin crystallization
by antimalarials
K. N. Olafson1, T. Nguyen1, J. D. Rimer1, P. G.
Vekilov1,2 *1Department of Chemical and Biomolecular Engineering,2
Department of Chemistry,
University of Houston, USA
17:15
Tu3-G05-4
Oral (15 min)Crystallization of barium sulfate and calcium
carbonate in simulated seawater
M. Boon, F. Jones*
Curtin University, Australia
17:30
Tu3-G05-5
Oral (15 min)Influence of tetrasodium pyrophosphate on carbonate
apatite formation
M. Olszynski1 *, J. Prywer1, E. Mielniczek - Brzóska2
1
Institute of Physics, Lodz University of Technology,
Poland, 2Institute of Chemistry, Environmental
Protection and Biotechnology, Jan Długosz University ofCzęstochowa, Poland
17:45
Tu3-G05-6
Oral (15 min)25

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Precursor formation in the melt crystallization of
triacylglyceride molecular compound system
K. Taguchi1 *, R. Ikoma1, A. Toda1, S. Ueno2, K. Sato2
1
Graduate School of Integrated Arts and Sciences,2
Graduate School of Biosphere Science, Hiroshima
University, Japan
18:00
Tu3-G05-7
Oral (15 min)Preferential Orientation of β-phase Triacylglycerol
on Graphite Surface
F. Kaneko1*, S. Yoshikawa2, H. Kida2, K. Sato3
1
Osaka University, Japan, 2Fuji Oil Co., Ltd., Japan,
3
Hiroshima University, Japan

Tu3-G06
Bulk Crystal Growth
Room: Oral 10
16:10
Tu3-G06-1
Invited oral (25 min)Growth and Scintillation Properties of 2inch
diameter SrI2(Eu) single crystal
Y. Shoji1,2 *, S. Kurosawa3, Y. Yokota3, S. Hayasaka1, K.
Kamada1,3, Y. Ohashi2, A. Yoshikawa1,2,3
1
C&A corporation, Japan, 2IMR, 3NICHe, Tohoku
University, Japan
16:35
Tu3-G06-2
Oral (15 min)Study on the crystal growth and thermal propertiesof (Gd,La)2Si2O7
R. Murakami1,3 *, S. Kurosawa2, Y. Ohashi1, Y. Shoji1, 3,
T. Horiai1, Y. Yokota2, K. Kamada2, 3, A. Yoshikawa1, 2, 3
1
Institute for Materials Research, 2New Industry
Creation Hatchery Center, Tohoku University, Japan,
3
C&A Corp., Japan
16:50
Tu3-G06-3
Oral (15 min)Bridgman growth and properties of Dy-doped
Bi4Si3O12 crystals
B. B.Yang1,2 *, J. Y. Xu1,2, Y. Zhang1,2, Y. Q. Chu1,2, H.
Shen1,2, T. Tian1,2, M. L. Wang1,2, Y. X. Wen1,2
1Institute of Crystal Growth, School of Materials Scienceand Engineering, 2School of Science, Shanghai Instituteof Technology, China
17:05
Tu3-G06-4
Oral (15 min)Crystal Growth and Luminescent Properties ofHafnium Chloride Scintillator
S. Kurosawa1 *, T. Horiai2, R. Murakami2, Y. Shoji2,3, Y.
Ohashi2, Y. Yokota1, K. Kamada1,3, A. Yoshikawa1, 2, 3,
M. Nikl4
1
New Industry Creation Hatchery Center, 2Institute forMaterials Research, Tohoku University, Japan, 3C&A
Corp., Japan, 4Institute of Physics ASCR, Czech
Republic
17:20
Tu3-G06-5
Oral (15 min)Growth of CeBr3 single crystal by
micro-pulling-down method and the scintillation
properties
T. Ito1 *, Y. Yokota2, S. Kurosawa1,2, K. Kamada2,3, Y.
Ohashi1, A. Yoshikawa1,2,3
1
Institute for Materials Research, Tohoku University,
Japan, 2New Industry Creation Hatchery Center, Japan,
3
C&A Corporation, Japan
17:35
Tu3-G06-6
Oral (15 min)Synthesis, Growth and Characterization of Doped
KY3F10 Crystals
Q. Cui*, J. Xu, H. Shen, T. Tian
Shanghai Institute of Technology, China
17:50
Tu3-G06-7
Oral (15 min)Crystal growth of Ce- and Pr-doped aluminum
garnets and influence of stoichiometry and Mg
codoping on their luminescence and scintillation
properties
J. Pejchal1 *, V. Babin1, M. Buryi1, A. Beitlerova1, P.
Prusa1, D. Panek2, T. Parkman2, K. Kamada3, A.
Yoshikawa3,4, M. Nikl1
1
Institute of Physics CAS, Czech Republic, 2Czech
Technical University in Prague, Czech Republic, 3NICHe,
4
Institute for Materials Research, Tohoku University,
Japan
18:05
Tu3-G06-8
Oral (15 min)Effect of Rochelle salt on the growth, piezoelectric,
optical, mechanical and Photoluminescence
properties of the Triglycine Sulphate Single Crystal
P. Rajesh*, G. Babu Rao, P. Ramasamy
SSN College of Engineering, India

Tu3-G07
Defect Formation
Room: Oral 5
16:10
Tu3-G07-1
Oral (15 min)Relationship between Curie Temperature and Point
Defects in Lithium Niobate
C. Koyama*, J. Nozawa, K. Fujiwara, S. Uda
Tohoku University, Japan
16:25
Tu3-G07-2
Oral (15 min)Growth, Characterization and Domain Configurationof (Li,Na,K)(Ta,Nb)O3 Single Crystals
H. R. Liu1,2 *, P. Veber1, A. Zintler2, J. Koruza2, L.
Molina-Luna2, D. Rytz3, J. Rödel2, M. Maglione1
1
CNRS-ICMCB, France, 2Technische Universität
Darmstadt, Germany, 3Forschungsinstitut fürmineralische und metallische Werkstoffe, Germany
16:40
Tu3-G07-3
Oral (15 min)
LGT crystal quality effects on the resonancefrequency stability of Bulk Acoustic Waves
Resonators
M. Allani1,2 *, N. Batis2, T. Laroche3, A. Nehari4, H.
Cabane4, K. Lebbou4, C. Pecheyran5, X. Vacheret1,
C. K. Rivenbark6, J. J. Boy1
1
FEMTO-ST Institute, UFC, CNRS, ENSMM, UTBM,
France, 2INSAT, Tunisie, 3Freq|n|sys, TEMIS Innovation,
France, 4Université Lyon1, France, 5Université de Pau,
France, 6CKR Consulting, USA
16:55
Tu3-G07-4
Oral (15 min)Cation-Stoichiometry of LRE1+xBa2-xCu3Oy Oxides
Tuned by Oxygen Vacancy via Thermodynamics andKinetics Approaches
X. Yao*Shanghai Jiao Tong University,China
17:10
Tu3-G07-5
Oral (15 min)Origin of optical distortions in DKDP crystals
J. Piquard1,2*, J. Zaccaro2,3, B. Pintault1, M. Groisil, F.

26

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Guillet1, A. Ibanez2,3
CEA/DAM, Le Ripault, France, 2Univ. Grenoble Alpes,
France, 3CNRS, Institut Néel, France
17:25
Tu3-G07-6
Oral (15 min)Growth and Characterization of pure and Ce doped
KCl Single Crystal Grown by Czochralski Method
S. Kumar1 *, N. Sinha2, B. Kumar1
1
Department of Physics and Astrophysics, 2Department
of Electronic, University of Delhi, India
17:40
Tu3-G07-7
Oral (15 min)Influence of Pressure of gas on Formation of Fluid
Inclusions
E. Bobo, G. Coquerel*
University of Rouen, France

1

Tu3-J01
Growth Simulation and Practice
Room: Oral 8
16:10
Tu3-J01-1
Invited oral (25 min)Atomistic and Macroscopic Approach for Epitaxial
GrowthK. Shiraishi1,2 *1Institute of Materials and Systems for Sustainability,
2
Graduate School of Engineering, Nagoya University,
Japan
16:35
Tu3-J01-2
Oral (15 min)
Simulation Study of Epitaxial Growth of GaN(0001)
using Inputs from ab initio Calculations
M. Chugh*, M. Ranganathan
Indian Institute of Technology Kanpur, India
16:50
Tu3-J01-3
Oral (15 min)
Theoretical study for misfit dislocation formation at
InAs/GaAs(001) interface
R. Kaida*, T. Akiyama, K. Nakamura, T. Ito
Mie University, Japan
17:05
Tu3-J01-4
Oral (15 min)
The Thermodynamic Scale of Inorganic Crystalline
Metastability
W. Sun1,4 *, S. Dacek1, S. P. Ong2, G. Hautier3, A. Jain4,
W. Richards1, K. A. Persson4,5, G. Ceder4,51
Massachusetts Institute of Technology, USA, 2Universityof California, USA, 3Université Catholique de Louvain,
Belgium, 4Lawrence Berkeley National Laboratory, USA,
5
University of California, Berkeley, USA
17:20
Tu3-J01-5
Oral (15 min)Numerical modelingof grain evolution in directional
solidificationof silicon
X. F. Qi1,2 *, W. Miller2, L. J. Liu1
1
Xi’an Jiaotong University, China, 2Leibniz Institute for
Crystal Growth (IKZ), Germany
17:35
Tu3-J01-6
Oral (15 min)Phase Field Modeling of Grain Boundary Evolution
during Directional Solidification of Silicon Film
H.-K. Lin, T. Jain*, C.-W. Lan
National Taiwan University, Taiwan
17:50
Tu3-J01-7
Oral (15 min) *Late News
Direct interpretation of interface shape, segregation,and melt flow during Bridgman crystal growth via
computational modeling and neutron imaging

J. H. Peterson1, Y. Wu1, C. Zhang1, A. S. Tremsin2, D.
Perrodin3, G. A. Bizarri3, E. D. Bourret3, A. S. Losko4, S.
Vogel4, M. Bourke4, J. J. Derby1 *1
University of Minnesota, USA, 2University of California
at Berkeley, USA, 3Lawrence Berkeley National
Laboratory, USA, 4Los Alamos National Laboratory,
USA

Tu3-T01
III-V Semiconductors
Room: Oral 9
16:10
Tu3-T01-1
Invited oral (25 min)
Improvement of GaAs VGF growth process by using
travelling magnetic fields
Ch. Frank-Rotsch*, N. Dropka, K. Giziewicz, A. Glacki,
U. JudaLeibniz Institute for Crystal Growth, Germany
16:35
Tu3-T01-2
Oral (15 min)Effects of Si Gas Flow Sequence on Electrical
Characteristics of GaAsN Films Grown by Atomic
Layer Epitaxy
Y. Yokoyama*, M. Horikiri, T. Haraguchi, T. Yamauchi,
H. Suzuki, T. Ikari,,A. Fukuyama
University of Miyazaki, Japan
16:50
Tu3-T01-3
Oral (15 min)Study of Detached Growth of Dilute Nitride ofIndium Antimonide
M. Deshpande1 *, D. Maske2, B. Arora3, D. Gadkari1
1
Mithibai college, India, 2Ruparel College, India, 3I. I. T
B. Mumbai, India
17:05
Tu3-T01-4
Oral (15 min)
Red LED Grown by High-Pressure MOVPE
A. Tamura1 *, R. Miyagoshi1, T. Yamamoto1, D. Sato1, T.
Nishitani2, Y. Honda3, H. Amano3,4
1
Department of Electrical Engineering and Computer
Science, 2Synchrotron Radiation Research Center,3
Center for Integrated Research of Future Electronics,
4
Akasaki Research Center, Nagoya University, Japan
17:20
Tu3-T01-5
Invited Oral (25 min)
Mass Production of GaAs by Melt Growth
S. Eichler*
Freiberger Compound Materials GmbH, Germany

Tu3-T06
Materials for Optical Devices
Room: Oral 7
16:10
Tu3-T06-1
Invited oral (25 min)Deep-UV Nonlinear Optical Boratoberyllate Crystals
N. Ye1 *, G. Peng1, M. Luo1, Z.-H. Lin2
1
Fujian Institute of Research on the Structure of Matter,
Chinese Academy of Sciences, China, 2TechnicalInstitute of Physics and Chemistry, Chinese Academy of
Sciences, China
16:35
Tu3-T06-2
Oral (15 min)
Design and synthiesis of NLO crystals
S.-L. Pan*
Xinjiang Technical Institute of Physics & Chemistry,
Chinese Academy of Sciences, China
16:50
Tu3-T06-3
Oral (15 min)27

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Ultraviolet Nonlinear Optical Crystal K3B6O10Br
M.-J. Xia*, B. Xu, Z.-Y. Hou, L. Liu, X.-Y. Wang, R.-K.
Li, C.-T. Chen
Technical Institute of Physics and Chemistry, Chinese
Academy of Sciences, China
17:05
Tu3-T06-4
Oral (15 min)Growth of high-quality CsLiB6O10 crystal and its
application to high-power 355 nm UV generation
K. Ueda1 *, Y. Orii2, M. Yoshimura1,3,4, Y. Takahashi1,3,4,
G. Okada2, H. Adachi1,3,4, Y. Mori1,3,4
1
Osaka Univ., Japan, 2Spectronix Co., Japan, 3SOSHO
Inc., 4SOSHO CHOKO Inc., Japan
17:20
Tu3-T06-5
Oral (15 min)Growth,nonlinearoptical and thermal properties of
NaSr3Be3B3O9F4 crystal
Z. Fang1,2, L. Liu1 *, Z.-Y. Hou1,2, K. Li1, X.-Y. Wang1,
C.-T. Chen1
1Technical Institute of Physics and Chemistry, Chinese
Academy of Science, China, 2University of Chinese
Academy of Science, China
17:35
Tu3-T06-7
Oral (15 min)
Twinned borate crystal growth on curved
crystal/liquid interface
K. Maeda1 *, T. Kaji1, S. Uda2, K. Fujiwara2, Y. Oyama1
1
Department of materials science, 2Institute for Materials
Research (IMR), Tohoku University, Japan

Tu3-T09
Nitride Semiconductors
Room: Oral 1
16:10
Tu3-T09-1
Invited oral (25 min)
High-Speed Growth of Thick InGaN Ternary Alloyby Tri-Halide Vapor Phase Epitaxy
H. Murakami1 *, T. Hirasaki1, M. Meguro1, Q.-T. Thieu1,
R. Togashi1, Y. Kumagai1, B. Monemar1,2, A. Koukitu1
1
Tokyo University of Agriculture and Technology, Japan,
2
Linköping University, Sweden
16:35
Tu3-T09-2
Oral (15 min)
MOVPE Growth and XRD characterization of
InGaN layers, quantum wells and wires
M. Leszczynski1,2 *, M. Sarzynski1,2, R. Czernecki1,2, G.
Targowski1, J. Plesiewicz1, E. Grzanka1,2, J. Domagala3,
J. Smalc-Koziorowska1,2, S. Grzanka1,2, P. Perlin1,2, M.
Krysko1, S. Krukowski1, T. Suski1
1
Institute of High Pressure Physics PAS, Poland,
2
TopGaN Ltd., Poland, 3Institute of Physics PAS, Poland
16:50
Tu3-T09-3
Oral (15 min)
The role of GaN-substrate off-cut for InGaN/GaN
quantum structures
M. Sarzyński1,2 *, R. Targowski2, E. Grzanka1,2, S.
Grzanka1,2, A. Reszka3, M. Leszczyński1,2, T. Suski1
1
Institute of High Pressure Physics PAS, Poland,
2
TopGaN Ltd., Poland, 3Institute of Physics PAS, Poland
17:05
Tu3-T09-4
Oral (15 min)InGaN/GaN Multi-Quantum-Well andLight-Emitting Diode Based on V-pit-Shaped GaN
Grown on Patterned Sapphire Substrate
L. Wang*, X. Meng, D. Yang, Z.-L. Wang, Z.-B. Hao, Y.
Luo, C.-Z. Sun, Y.-J. Han, B. Xiong, J. Wang, H.-T. Li

Tsinghua University, China
17:20
Tu3-T09-5
Oral (15 min)
Strain Relaxation Analysis Using In-situ X-ray
Reciprocal Space Mapping Measurements in
RF-MBE Growth of GaInN
T. Yamaguchi1 *, T. Sasaki2, M. Takahasi2, T. Onuma1,
T. Honda1, Y. Nanishi3
1
Kogakuin University, Japan, 2Japan Atomic Energy
Agency, Japan, 3R-GIRO, Ritsumeikan University, Japan
17:35
Tu3-T09-6
Oral (15 min)Using Eu emission to detect In segregation in
InxGa1-xN
J. Takatsu*, A. Koizumi, S. Yamanaka, M. Matsuda, T.
Kojima, Y. Fujiwara
Osaka University, Japan
17:50
Tu3-T09-7
Oral (15 min)
Thermodynamic analysis of InN metalorganic vapor
phase epitaxy: influence of growth orientation andsurface reconstruction
A. Kusaba1 *, Y. Kangawa1, 2, K. Kakimoto1, 2, K.
Shiraishi3, H. Amano3, A. Koukitu4
1
Dept. Aeronautics and Astronautics, 2RIAM, Kyushu
University, Japan, 3IMaSS, Nagoya University, Japan,
4
Tokyo University of Agriculture and Technology, Japan
18:05
Tu3-T09-8
Oral (15 min) *Late News
Study on the range of alpha particles in GaN diodes
T. Nakano1 *, T. Arikawa1, K. Mochizuki1, M. Sugiura1,
H. Nakagawa2, S. Usami3, M. Kushimoto3, Y. Honda3, H.
Amano3.4, S. Schütt5, A. Vogt5, M. Fiederle5, H. Mimura6,
Y. Inoue1, T. Aoki6
1
Dept. of Electronics and Materials Science, 2Dept. ofInformatics, Shizuoka Univ., Japan, 3Dept. ofEngineering and Institute of Materials and Systems for
Sustainability, 4Akasaki Research Center, Nagoya Univ.,
Japan, 5Univ. of Freiburg, Germany, 6Research Instituteof Electronics, Shizuoka Univ., Japan
Poster 2
Tuesday afternoon, 9 August, 18:10
Event Hall
G05, G06, G10, J01, T01, T06, T09

TuP-G05
Organic and Biological Crystallization
18:10
TuP-G05-1
Poster (120 min)Calcium oxalate crystal growth modification;
investigations with confocal Raman spectroscopy
C. J. McMulkin*, M. Massi, F. Jones
Curtin University, Australia
18:10
TuP-G05-2
Poster (120 min)
Bulk crystal growth and physio-chemical
characterization of organic nonlinear opticalmaterial: 2-amino-5-chloropyridinium hydrogensuccinate single crystal
K. Boopathi1,2 * , P. Ramasamy2, R. Gopalakrishnan1
1Anna University, India, 2SSN College of Engineering,
India
18:10
TuP-G05-3
Poster (120 min)An investigation of the effect of mechanical vibration

28

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
on protein crystal quality
Q.-Q. Lu*, B. Zhang, L. Tao, L. Xu, D.-C. Yin
Northwestern Polytechnical University, China
18:10
TuP-G05-4
Poster (120 min)Bacterially induced struvite crystallization - uniquemorphology, surface and bulk properties
Jolanta Prywer*
Lodz University of Technology, Poland
18:10
TuP-G05-5
Poster (120 min)Green tea and struvite and carbonate apatiteformation - the role of (-)- epicatechin
J. Prywer1, M. Olszynski1 *, E. Mielniczek - Brzóska2
1
Lodz University of Technology, Poland, 2Jan Długosz
University of Częstochowa, Poland
18:10
TuP-G05-6
Poster (120 min)Crystal Growth, Structure, Morphology, Optical,
Dielectric and SHG Properties of Organic
2-Amino-5-Nitropyridnium p-Tolunesulfonate(2A5NPT) Single Crystals for Nonlinear Optical(NLO) Applications
V. Sivasubramani*, M. Senthil Pandian, P. Ramasamy
SSN College of Engineering, India
18:10
TuP-G05-7
Poster (120 min)On the origin of impurities at crystallization ofproteins
S. S. Baskakova1 *, V. V. Volkov1, T. V. Laptinskaya2,
M. S. Lyasnikova1, A. E. Voloshin1, M. V. Kovalchuk1, 3
1
Shubnikov Institute of Crystallography of Russian
Academy of Sciences, Russia, 2Lomonosov Moscow State
University, Russia, 3National Research Center“Kurchatov Institute”, Russia
18:10
TuP-G05-8
Poster (120 min)
New Pt(II) complex: synthesis, crystal structure andnanosize films for OLED application
I. Taydakov1,2, R. Saifutyarov1, R. Avetisov1, E.
Mozhevitina1, A. Khomyakov1, I. Avetissov1 *1
D. Mendeleev University of Chemical Technology ofRussia, Russia, 2P.N. Lebedev Institute of Physics of RAS,
Russia
18:10
TuP-G05-9
Poster (120 min)
Evaluation of intermolecular interactions bymacrobond and EET analyses and hydration effects
in protein crystals
Y. Sugawara1 *, Y. Hirano1, S. Yamamura1, S. Endo1, T.
Takahashi2, M. Ootaki3, N. Matsumoto3
1
Kitasato University, Japan, 2Ritsumeikan University,
Japan, 3St. Marianna University School of Medicine,
Japan
18:10
TuP-G05-10 Poster (120 min)In situ observation of crystal growth of disodium
uridine 5'-monophosphate heptahydrate anddisodium inosine 5'-monophosphate octahydrate
M. Ootaki1 *, Y.Ohta1, M. Watanabe1,2, Y. Takeba1, T.
Iiri1, N. Matsumoto1, Y, Sugawara3
1
Department of Pharmacology, St. Marianna University
School of Medicine, Japan, 2Institute for Animal
Experimentation, St Marianna University Graduate
School of Medicine, Japan, 3Kitasato University, Japan
18:10
TuP-G05-11 Poster (120 min)Promotion of Protein Crystal Growth by
Spatiotemporally Switching Crystal Growth Modevia Femtosecond Laser Ablation
H. Y. Yoshikawa1,2 *, Y. Tominaga2, M. Maruyama2, M.
Yoshimura2, S. Sugiyama3, H. Adachi2,4, K. Tsukamoto2,
H. Matsumura4,5, K. Takano4,6, S. Murakami4,7, T.
Inoue2,4, Y. Mori2,41
Saitama University, Japan, 2Graduate School ofEngineering, 3Graduate School of Science, Osaka
University, Japan, 4SOSHO Inc., Japan, 5Ritsumeikan
University, Japan, 6Kyoto Prefectural University, Japan,
7
Tokyo Institute of Technology, Japan
18:10
TuP-G05-12 Poster (120 min)Development of a New Microscopy System Toward
In-Situ Observation of Laser-Induced Crystal
Growth Dynamics
D. Suzuki*, S. Nakabayashi, H. Y. Yoshikawa
Saitama University, Japan
18:10
TuP-G05-13 Poster (120 min)Field-assisted crystallisation of organic
charge-transfer complexes
J. C. Walton1,2, S. R. Hall1
1
School of Chemistry, 2Bristol Centre for Functional
Nanomaterials, University of Bristol, UK
18:10
TuP-G05-14 Poster (120 min)Controlled Transformation of Amorphous Calcium
Carbonate on Some Crystalline Mineral Surfaces
I. W. Kim*, T. Y. Jeon
Soongsil University, Korea
18:10
TuP-G05-16 Poster (120 min)Temporal stability improvement of the metastablephase of acetaminophen using low supersaturated
solution growth
K. Nii1 *, M. Maruyama1, Y. Takahashi1,2, H.
Yoshikawa1,3, S. Okada2, H. Adachi1,2, S. Sugiyama4, K.
Takano2,5, S. Murakami2,6, H. Matsumura2,7, T. Inoue1,2,
K. Tsukamoto1,8, M. Yoshimura1, Yu. Mori1,2
1
Grad. Sch. of Eng., Osaka Univ., Japan, 2SOSHO Inc.,
Japan, 3Dept. of Chemistry, Saitama Univ., Japan, 4Grad.
Sch. of Sci., Osaka Univ., Japan, 5Kyoto Pref. Univ.,
Japan, 6Tokyo Inst. of Tech., Japan, 7Ritsumeikan Univ.,
Japan, 8Tohoku Univ., Japan
18:10
TuP-G05-17 Poster (120 min)Gel immobilized colloidal crystals and theirapplication for strain sensing
S. Nishikawa*, A. Toyotama, T. Okuzono, J. Yamanaka
Nagoya City Univ., Japan
18:10
TuP-G05-18 Poster (120 min)Characterization of grown-in dislocation in highquality glucose isomerase crystals by synchrotron
X-ray topography
R. Suzuki1 *, T. Kishi1, H. Koizumi2, K. Tsukamoto3, Y.
Arai4, S. Fukuyama5, Y. Suzuki6, K. Kojima7, M.
Tachibana1
1
Yokohama City University, Japan, 2Tohoku University,
Japan, 3Osaka University, Japan, 4Japan Aerospace
Exploration Agency, Japan, 5Advanced Engineering
Services Co., Ltd., Japan, 6The University of Tokushima,
Japan, 7Yokohama Soei University, Japan

29

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
18:10
TuP-G05-19 Poster (120 min)
Step velocities of glucose isomerase crystals in thepresence of hen egg-white lysozyme in solution
T. Fujiwara1 *, D. Nakahashi2, S. Yanagiya3, Y. Suzuki3
1Institute of Scio-Arts and Sciences, 2Graduate School of
Advanced Technology and Science, 3Institute ofTechnology and Science, Tokushima University, Japan
18:10
TuP-G05-20 Poster (120 min)Influence of ACR on PVC Crystallinity and Foamed
PVC Composite
P.-Y. Ma1 *, H.-Y. Chen1, Y.-H. Zhang2, L. Xiang1
1
Tsinghua University, China, 2Sichuan University, China
18:10
TuP-G05-21 Poster (120 min)*Late
NewsAn investigation on the effect of surface roughness of
crystallization plate on protein crystallization
H. Hou*, S. Y. Hu, M. Y. Wang, D. C. Yin
Northwestern Polytechnical University, China

TuP-G06
Bulk Crystal Growth
18:10
TuP-G06-1
Poster (120 min)Crystal Growth and Characterization of a New Polar
Crystal — Cs2TeW3O12
P. Zhao*, Z. L. Gao, Y. X. Sun, C. Q. Zhang, X. T. Tao
Shandong University, China
18:10
TuP-G06-2
Poster (120 min)Componentsand phase homogeneityanalysis of
ZnGeP2 single crystal
D.-H. Yang*, B.-J. Zhao, S.-F. Zhu, B.-J. Chen, Z.-Y. He,
Z.-R. Zhao, S.-S. Fu, Y.-F. Zhao
Sichuan University, China
18:10
TuP-G06-3
Poster (120 min)Detached ingot growth in terrestrial lab (on Earth),bulk growths: the high quality single crystals by VDS
D. Gadkari1 *, D. Maske2, M. Deshpande3, B. M. Arora4
1
Mithibai College, India,.2Ruparel College, India, 3Jai
Hind College, India, 4I. I. T- B., India
18:10
TuP-G06-4
Poster (120 min)Solid solution Li2MoO4-Li2WO4 crystal growth andcharacterization
O. Barinova1, A. Sadovskiy1, I. Ermochenkov1, S.
Kirsanova1, A. Khomyakov1,2, I. Avetissov1 *1
D. Mendeleyev University of Chemical Technology ofRussia, Russia, 2ARMOLED Ltd., Russia
18:10
TuP-G06-5
Poster (120 min)Influence of growth temperature on rapid growth
DKDP crystal
L. Zhang1,2 *, F. Liu1,2, S.-Y. Wang1,2, M.-X. Xu1,2, B.-A.
Liu1,2, Z.-P. Wang1,2, X.-G. Xu1,2, X. Sun1, 21State Key Laboratory of Crystal Materials, 2Key
Laboratory of Functional Crystal Materials and Device,
Shandong University, China, 3University of Science andTechnology Beijing, China.
18:10
TuP-G06-6
Poster (120 min)
Bulk Single Crystal Growth and Mechanical
Properties of the Energetic Molecular Crystal
2,4,6,8,10,12-hexanitrohexaazaisowurtzitane
R. Xu*, X.-Q. Zhou, S.-L. Hao, H.-Z. Li

Institute of Chemical Materials, China Academy ofEngineering Physics, China
18:10
TuP-G06-7
Poster (120 min)Morhological Stabily of Solid-Liquid Interface during
Crystal Growth of Fluorides under High-Frequency
Heating
P. P. Fedorov1 *, S. N. Ushakov2, M. A. Uslamina2, S. V.
Kuznetsov1, K. N. Nishchev2, V. V. Osiko1
1
Prokhorov General Physics Institute, Russian Academyof Sciences, Russia, 2Ogarev Mordovia State University,
Russia
18:10
TuP-G06-8
Poster (120 min)
Bulk crystal growth of α- and β-BaTeMo2O9 and thedual-phase BaTeMo2O9
Q. Wu*, Z. L. Gao, Y. X. Sun, X. T. Tao
Shandong University, China
18:10
TuP-G06-9
Poster (120 min)Investigation double salt K2Ba(NO3)4 crystals
K. E. Zarubina1,2 *, L. I. Isaenko1,2, B. I. Kidyarov3, A. F.
Rozhkov2, S. V. Goryainov2
1
Novosibirsk State University, Russia, 2Institute ofGeology and Mineralogy Siberian branch Russian
Academy of Sciences, Russia, 3Institute of Semiconductor
Physics Siberian branch Russian Academy of Sciences,
Russia
18:10
TuP-G06-10 Poster (120 min)Influence of Temperature Gradient in Vertical
Bridgman Growth of Ga-doped Germanium Crystals
V. S. Sidorov, E. N. Korobeinikova, V. I. Strelov, G. N.
Kozhemyakin*
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia
18:10
TuP-G06-11 Poster (120 min)
Structural Characteristics and Large
Electric-Field-Induced Strains in Zr and Mn-Doped
92.5%(Bi0.5Na0.5)TiO3-7.5%BaTiO3 Single Crystals
C.-S. Chen1 *, P.-Y. Chen2, M.-Q. Lyu2, Y.-P. Syu2, C.-S.
Tu3
1
Hwa Hsia University of Technology, Taiwan, 2Ming Chi
University of Technology, Taiwan, 3Fu Jen Catholic
University, Taiwan
18:10
TuP-G06-12 Poster (120 min)Growth and piezoelectric properties of
Ca3Nb(Al0.5Ga0.5)3Si2O14 crystals with langasite
structure
K.-N. Xiong*, Y.-Q. Zheng, X.-N. Tu, B.-H. Jiang, S.-L.
Cao, E. Shi
Shanghai Institute of Ceramics, Chinese Academy of
Sciences, China
18:10
TuP-G06-13 Poster (120 min)Optical and Scintillation Characteristics of
Gd2YAl2Ga3O12:Ce and Lu2YAl2Ga3O12:Ce Single
CrystalsW. R. Chewpraditkul1 *, O. Sakthong1, N.
Pattanaboonmee1, W. Chewpraditkul1, T. Szczesniak2,
L. Swiderski2, M. Moszynski2, K. Kamada3, A.
Yoshikawa3, M. Nikl4
1
King Mongkut’s University of Technology Thonburi,
Thailand, 2National Centre for Nuclear Research,

30

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Poland, 3Tohoku University, Japan, 4Institute of Physics,
AS CR, Czech Republic
18:10
TuP-G06-14 Poster (120 min)Comparison of Luminescence, Energy Resolution andLight Loss Coefficient of La0.2Gd1.8Si2O7:Ce andLu1.9Y0.1SiO5:Ce Scintillators
W. Chewpraditkul1 *, N. Yawai1, S. Kurosawa2, A.
Yoshikawa2,3, M. Nikl4
1
King Mongkut’s University of Technology Thonburi,
Thailand, 2Institute for Materials Research, 3New
Industry Creation Hatchery Center (NICHe), Tohoku
University, Japan, 4Institute of Physics, AS CR, Czech
Republic
18:10
TuP-G06-15 Poster (120 min)Growth and piezoelectric properties of large size
ReCa4O(BO3)3 (Re=Y, Sm) crystals
K.-N.n Xiong*, Y.-Q. Zheng, X.-N. Tu, B.-H. Jiang,
S.-L. Cao, E. Shi
Shanghai Institute of Ceramics, Chinese Academy of
Sciences, China
18:10
TuP-G06-16 Poster (120 min)Growth from the melt of the crystals of(ZrO2)1-x-y(Sc2O3)x(Y2O3)y solid solutions
A. V. Kulebyakin1 *, M. A. Borik1, S. I. Bredikhin2, V. T.
Bublik3, I. E. Kuritsyna2, E. E. Lomonova1, F. O.
Milovich3, V. A. Myzina1, V. V. Osiko1, P. A.
Ryabochkina4, S. V. Seryakov3, N. Yu. Tabachkova3
1
Prokhorov General Physics Institute RAS, Russia,
2
Institute of Solid State Physics RAS, Russia, 3National
University of Science and Technology «MISIS», Russia,
4
Ogarev Mordovia State University, Russia
18:10
TuP-G06-17 Poster (120 min)Growth of KDP Single Crystal in Second Harmonic
Generation direction by modified
Sankaranarayanan-Ramasamy Method
F. Barati and H. Rezagholipour Dizaji*
Semnan University, Iran
18:10
TuP-G06-18 Poster (120 min)
The Effect of Seed Arrangements on the Ingot
Quality of N-type Mono-like
Silicon Grown by Directional Solidification
Y. C. Wu1, A. Lan1, C. F. Yang1 *, C. Hsu2, C. M. Lu3,
A. Yang3, C. W. Lan1
1
National Taiwan University, Taiwan, 2Sino-American
Silicon Productions Inc., Taiwan, 3Solartech Energy Inc.,
Taiwan
18:10
TuP-G06-19 Poster (120 min)Effects of Na co-doping on optical and scintillation
properties for Eu:LiCaAlF6 neutron scintillator
crystals
C. Tanaka1 *, Y. Yokota2, S. Kurosawa2, A. Yamaji1, Y.
Ohashi1, K. Kamada2,3, M. Nikl4, A. Yoshikawa1,2,3
1
Institute for Materials Research, 2New Industry
Creation Hatchery Center (NICHe), Tohoku University,
Japan, 3C&A corporation, Japan, 4Institute of Physics
AS CR, Czech Republic
18:10
TuP-G06-20 Poster (120 min)
Structure, Growth and Characterization of
4-dimethylaminopyridinium pyridine-2-carboxylate

single crystals
A. Arunkumar1 *, R. Jagan2, P. Ramasamy3
1Agni College of Technology, India, 2SophisticatedAnalytical Instruments facility, India, 3SSN college ofEngineering, India
18:10
TuP-G06-21 Poster (120 min)
YAG and LuAG single crystal fiber growth by micro
pulling down method
Y. Li*, Z.-T. Jia, D.-S. Yuan, X.-T. Tao
Shandong University, China
18:10
TuP-G06-22 Poster (120 min)Czochralski growth of rare earth-doped
Gd3(Al,Ga)5O12 single crystals and their opticalcharacterization
M. Głowacki1 *, P. Solarz2, W. Ryba-Romanowski2, M.
Berkowski1
1
Institute of Physics, Polish Academy of Sciences,2
Institute of Low Temperature and Structure Research,
Polish Academy of Sciences, Poland
18:10
TuP-G06-23 Poster (120 min)Growth of Pr doepd SrI2 Single Crystals and their
Optical and Scintillation Properties
Y. Yokota1 *, S. Kurosawa1, Y. Ohashi2, K. Kamada1,3,
A. Yoshikawa1,2,3
1
New Industry Creation Hatchery Center (NICHe),
2
Institute for Materials Research, Tohoku University,
Japan, 3C&A Corporation, Japan
18:10
TuP-G06-24 Poster (120 min)NaGd(WO4)2 Single Crystals Grown by Czochralski
from Stoichiometric and Non-stoichiometric Melts
K. A. Subbotin1 *, D. A. Lis1, V. V. Slavkina2, V. V.
Voronov1, R. R. Sayfutyarov2, V. G. Senin3, A. I. Titov2,
E. V. Zharikov1,2
1
A. M. Prokhorov General Physics Institute RAS, Russia,
2
D. I. Mendeleyev University of Chemical Technology ofRussia, Russia, 3Vernadsky Institute of Geochemistry andAnalytical Chemistry RAS, Russia
18:10
TuP-G06-25 Poster (120 min)Floating zone growth and characterization of
12(Ca1-xLnxO).7Al2O3 (Ln3+ = Y3+, Ho3+, Nd3+, Eu3+)
single crystals
Md. Mozahar Ali*, M. Nagao, S. Watauchi, I. Tanaka
University of Yamanashi, Japan
18:10
TuP-G06-26 Poster (120 min)
Mechanical Properties and stress distribution of
LiNbO3 Crystals
Y.-Y. Dong, Y. Zhang*, J.-Y. Xu, Y.-Q. Chu
Shanghai Institute of Technology, China
18:10
TuP-G06-27 Poster (120 min)Growth and Electrical Properties Characterization of
Pb(In1/2Nb1/2)O3-PbTiO3 Tetragonal Single Crystal by
Modified Bridgeman Method
K. Song*, Z.-R. Li, Z. Xu, S. Fan
Xi’an Jiaotong University, China
18:10
TuP-G06-28 Poster (120 min)Light Yield and Light Loss Coefficient of LuAG:Ceand LuAG:Pr Under Excitation with α- and γ- rays
K. Sreebunpeng1 *, W. Chewpraditkul1, M. Nikl2
1
King Mongkut’s University of Technology Thonburi,

31

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Thailand, 2Institute of Physics, AS CR, Czech Republic
18:10
TuP-G06-29 Poster (120 min)Enhanced optical, mechanical and dielectric behavior
in dye doped potassium acid phthalate (KAP) single
crystals
G. Babu Rao*, P. Rajesh, P. Ramasamy
SSN College of Engineering, India
18:10
TuP-G06-30 Poster (120 min)Scintillation Timing Characteristics of(La,Gd)2Si2O7:Ce and Gd2SiO5:CeSingle Crystal Scintillators: A Comparative Study
O. Sakthong1 *, W. R. Chewpraditkul1, N. Yawai1, W.
Chewpraditkul1, T. Szczesniak2, L. Swiderski2, M.
Moszynski2, S. Kurosawa3, A. Yoshikawa3,4, M. Nikl5
1
King Mongkut’s University of Technology Thonburi,
Thailand, 2National Centre for Nuclear Research,
Poland, 3Institute for Materials Research, 4New Industry
Creation Hatchery Center (NICHe), Tohoku University,
Japan, 5Institute of Physics, AS CR, Czech Republic
18:10
TuP-G06-31 Poster (120 min)Scintillation Characteristics of Lu1.8 Gd0.2SiO5:Ce and
Gd2SiO5:Ce Single Crystals in α- and γ- rays
Spectrometry
N. Yawai1 *, K. Wantong1, W. Chewpraditkul1, M. Nikl2
1
King Mongkut’s University of Technology Thonburi,
Thailand, 2Institute of Physics, AS CR, Czech Republic
18:10
TuP-G06-32 Poster (120 min)Growth and Properties of Ce:LaBr3 Scintillation
CrystalH. L. Wang*, J. R. Chen, T. Y. Tian, and C. X. Huang
Beijing Sinoma Synthetic Crystals Co. Ltd., China
18:10
TuP-G06-33 Poster (120 min)Recent advances in disordered crystals
H.-H. Yu*, Z.-B. Pan, H.-J. Zhang, J. Wang
Shandong University, China
18:10
TuP-G06-34 Poster (120 min)Luminescence and Light Yield of
Gd2YGa3Al2O12:Pr3+ Single Crystal Scintillators
P. Lertloypanyachai1 *, K. Sreebunpeng1, N.
Pattanaboonmee1, W. Chewpraditkul1, K. Kamada2,3, A.
Yoshikawa2,3, M. Nikl4
1
King Mongkut’s University of Technology Thonburi,
Thailand, 2Institute for Materials Research, 3New
Industry Creation Hatchery Center (NICHe), Tohoku
University, Japan, 4Institute of Physics, AS CR, Czech
Republic
18:10
TuP-G06-35 Poster (120 min)Vertical Gradient Freeze Growth of Mg2Si crystals
using Liquid Encapsulated Liquinert Process
H. Wada1 *, H. Syono1, H. Katsumata1, S. Sakuragi2
1
Meiji University, Japan, 2Union Materials Inc., Japan
18:10
TuP-G06-36 Poster (120 min)Ba, Sr –fluoride borates with new type of anionic
isomorphism and X-ray sensitivity
T. B. Bekker1,2 *, V. P. Solntsev1, A. P. Yelisseyev1, S.
V. Rashchenko1,2, P. P. Fedorov3
1
Sobolev Institute of Geology and Mineralogy, Russia,
2
Novosibirsk State University, Russia, 3Prokhorov
General Physics Institute, Russia

TuP-G10External Fields, Microgravity
18:10
TuP-G10-1
Poster (120 min)Crystal Growth of BixSb1-x Solid Solutions by
Stepanov method with Ultrasound Presence
G. N. Kozhemyakin*
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia
18:10
TuP-G10-2
Poster (120 min)
Impurities segregation controlled by electromagnetic
field: Application to Silicon for PV
K. Zaidat1 *, M. Cablea1, A. Gagnoud1,2, Y. Delannoy1
1
University of Grenoble Alpes, France, 2CNRS – SIMAP,
France
18:10
TuP-G10-3
Poster (120 min)Solidification process of metallic alloy: Experimentson the influence of the travelling magnetic field
K. Zaidat1 *, L. Hachani2, Y. Fautrelle1
1
University of Grenoble Alpes, France, 2University ofAmar Telidji of Laghouat, Algeria
18:10
TuP-G10-4
Poster (120 min)Influence of Lower Frequency Electromagnetic Fieldon the Dendritic Crystal Growth in Special Alloys
E.-G. Wang *, Y. Xu, T. Wang, F. Wang
Northeastern University, China
18:10
TuP-G10-5
Poster (120 min)Segregation Effects during Growth of N-Type
Multicrystalline Silicon Using Travelling Magnetic
FieldsI. Buchovska*, N. Dropka, S. Kayser, F. M. Kiessling
Leibniz Institute for Crystal Growth, Germany
18:10
TuP-G10-6
Poster (120 min)Formation of side branches of dendrites of ice
crystals in microgravity
E. Yokoyama1, Y. Furukawa2
1
Gakushuin University, Japan, 2Hokkaido University,
Japan
18:10
TuP-G10-7
Poster (120 min)A Numerical Study on the Growth Process of InGaSb
Crystals under Microgravity Onboard theInternational Space Station
X. Jin1 *, T. Yamamoto1, Y. Takagi1, Y. Okano1,2,4,5, Y.
Inatomi2,3, Y. Hayakawa4, S. Dost5
1
Osaka University, Japan, 2ISAS, Japan Aerospace
Exploration Agency, Japan, 3SOKENDAI, Japan,
4
Shizuoka Univeristy, Japan, 5University of Victoria,
Canada
18:10
TuP-G10-8
Poster (120 min)In-situ Observation Techniques for Studying theProtein Crystal Growth in SpaceT. Yamazaki1 *, K. Tsukamoto2,3, I. Yoshizaki4, S.
Fukuyama5, H. Miura6, T. Shimaoka7, T. Maki8, K. Oshi2,
Y. Kimura1
1
Hokkaido University, Japan, 2Tohoku University, Japan,
3
Osaka University, Japan, 4Japan Aerospace Exploration
Agency (JAXA), Japan, 5Advanced Engineering Services
Co., LTD., Japan, 6Nagoya City University, Japan,
7Japan Space Forum, Japan, 8Olympus Optical Co.,

32

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Japan
18:10
TuP-G10-9
Poster (120 min)Effect of Thermo-solutal Marangoni Convection on
Azimuthal Wave Number in a Liquid Bridge
H. Minakuchi1 *, Y. Okano2, S. Dost3
1
University of the Ryukyus, Japan, 2Osaka University,
Japan, 3University of Victoria, Canada
18:10
TuP-G10-10 Poster (120 min)Axial Vibration Control technique for crystal growthfrom the melt: analysis of vibrational flows' behavior
V. Kostikov1, E. Sukhanova1,2, A. Sadovskiy1, E.
Zharikov1, I. Avetissov1,2 *1D.Mendeleev University of Chemical Technology ofRussia, 2ARMOLED Ltd., Russia

TuP-J01
Growth Simulation and Practice
18:10
TuP-J01-1
Poster (120 min)
Oscillatory flow and the interface inversion processduring Czochralski growth of semitransparent oxide
crystals
R. Faiez*, Y. Rezaei
Laser & Optics Research School, Iran
18:10
TuP-J01-2
Poster (120 min)First principles and thermodynamic analysis oftrimethylgallium (TMG) decomposition during
MOVPE growth of GaN
K. Sekiguchi1 *, H. Shirakawa1, Y. Yamamoto1, M.
Araidai1,2, Y. Kangawa3, K. Kakimoto3, K. Shiraishi1,21Graduate School of Engineering, 2Institute for Materials
and Sustainability, Nagoya University, Japan, 3Kyushu
University, Japan
18:10
TuP-J01-3
Poster (120 min)Phase-field Modeling of Twin-related Faceted
Dendrite Growth
G.-Y. Chen, C. W. Lan
National Taiwan University, Taiwan
18:10
TuP-J01-4
Poster (120 min)A Simplified Finite Element Model for Numerical
Simulation of Temperature Field and Optimization of
Parameters in Single Crystal Growth by Optical
Float Zone Technique
Y.-Z. Yan, M.J. Shi, Y.-J. Jiang
Beijing University of Technology, China
18:10
TuP-J01-5
Poster (120 min)Numerical investigation on Effect of the Schmidt
number on the diffusion of impurities and dopants inmolten silicon during directional solidification for PV
applications
M. Srinivasan*, P. Ramasamy
SSN College of engineering, India
18:10
TuP-J01-6
Poster (120 min)Numerical simulation and growth of Li2Zn2(MoO4)3
single crystals by Cyropulos technique
V. Sukharev1, E. Sukhanova1,2 *, A. Sadovsky1, I.
Avetissov1,2
1
D. Mendeleev University of Chemical Technology ofRussia, Russia, 2ARMOLED Ltd., Russia
18:10
TuP-J01-7
Poster (120 min)Numerical Analysis of melt-Crystal Interface andeffect of annealing in mc-Si Ingot Grown by DS
Process for PV application
G. Aravindan*, M. Srinivasan, K. Aravinth, P.
Ramasamy
SSN College of Engineering, India
18:10
TuP-J01-8
Poster (120 min)
Simulation of industrial scale directional
solidification furnace with bottom opening insulation
to grow mc-Si ingot for PV applications
S. G. Nagarajan*, M. Srinivasan, K. Aravinth, P.
Ramasamy
SSN College of Engineering, India
18:10
TuP-J01-9
Poster (120 min)Numerical investigation of melt flow in a simulated
Czochralski growth system under the influence of therotational speed of the crystal
N. Soltani1, S. Rahal1, H. Azoui2, D. Bahloul2 *1
Department of Mechanical Engineering, 2Département
de Physique, Université Hadj Lakhdar de Batna, Algeria
18:10
TuP-J01-10
Poster (120 min)Effect of crystal orientation and process parameterson 3D anisotropic stress during FZ and CZ growth ofsilicon
J. Virbulis*, I. Drikis, M. Plate, J. Sennikovs
University of Latvia, Latvia
18:10
TuP-J01-11
Poster (120 min)
Uniformly valid asymptotic solutions of rod eutectic
growth under directional solidfication
X.-M. Li*, F. Xu
Kunming University of Science and Technology, China
18:10
TuP-J01-12
Poster (120 min)Scale-up of Bridgman Growth of Scintillator Crystals
for Advanced Detection
C. Zhang1 *, J. H. Peterson1, D. Perrodin2, G. A. Bizarri2,
E. D. Bourret2, J. J. Derby1
1
University of Minnesota, USA, 2Lawrence Berkeley
National Laboratory, USA
18:10
TuP-J01-13
Poster (120 min)Contribution of lattice constraint to indium
incorporation during coherent growth of InGaN
T. Tamura1 *, A. Kusaba1, Y. Kangawa1, 2, T. Ito3, T.
Suski4, K. Kakimoto1, 2, A. Koukitu5
1Dept. Aeronautics and Astronautics, 2RIAM, Kyushu
University, Japan, 3Mie University, Japan, 4Institute ofHigh Pressure Physics, PAS, Poland, 5Tokyo Universityof Agriculture and Technology, Japan
18:10
TuP-J01-14
Poster (120 min)Modelling of L-Glutamic acid crystal nuclei
formation from solution
Y. Tahri2,3, Z. Kožísek1 *, E. Gagnière2, E. Chabanon2, T.
Bounahmidi3, D. Mangin2
1
Institute of Physic CAS, Czech Republic, 2Université deLyon, Université Claude Bernard Lyon 1, CNRS, France,
3
Université Mohammed V, Ecole Mohammadia
d’Ingénieurs, LASPI, Morocco
18:10
TuP-J01-15
Poster (120 min)
Designing of Ice Crystal Nucleation Promoting
Surface Using Molecular Dynamics

33

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
N. Imai*, D. Suh, D. Takaiwa, K. Yasuoka
Keio University, Japan
18:10
TuP-J01-16
Poster (120 min)Effects of Furnace Pressure on Oxygen and Carbon
Coupled Transport in an Industrial Directional
Solidification Furnace
X. F. Qi*, L. J. Liu, W. C. Ma
Xi’an Jiaotong University, China
18:10
TuP-J01-17
Poster (120 min)Fast 3D prediction of the VB/VGF growth of CdZnTeby a mixed method
A. Pestiaux1, X. H. Wang2, R. Rolinsky1, N. Van den
Bogaert1, F. Dupret1, 3 *1
FEMAG S. A., Louvain-la-Neuve, Belgium, 2CnTech Co.,
Ltd, China, 3Universite catholique de Louvain, Belgium
18:10
TuP-J01-18
Poster (120 min)*Late
News
Prediction of solution flow combined withcomputational fluid dynamics simulation and sparsemodeling
N. Kokubo1 *, Y. Tsunooka1, S. Harada1, 2, M. Tagawa1, 2,
T. Ujihara1, 2
1
Department of Materials Science and Engineering,
2
Institute of Materials and Systems for Sustainability(IMaSS), Nagoya University, Japan
18:10
TuP-J01-19
Poster (120 min)*Late
NewsFirst-principles Study of Initial Stage of MoS2 Crystal
GrowthK. Okada, H. Kageshima*
Shimane University, Japan

TuP-T01
III-V Semiconductors
18:10
TuP-T01-1
Poster (120 min)Uncooled InAsSb Photoconductors with
CutoffWavelengths Longer than 9 μm
Y. Z. Gao1 *, X. L. Jia1, X. Y. Gong1, J. J. Li2, Y. B.
Feng2, T. Makino3, H. Kan3, T. Koyama4, Y. Hayakawa4
1
Tongji University, China, 2Huaxing Infrared Device
Company, China, 3Hamamatsu Photonics K. K., Japan, 4
Shizuoka University, Japan
18:10
TuP-T01-2
Poster (120 min)Research into the influencing factor of resistivity on ntype 4H-SiC by physical vapor transport
X.-R. Hou*, Y.-M. Wang, B. Li, R.-S. Wei, K.-L. Mao,
X. Dai, K.-F. Ma
The Second Institute of China Electric Technology
Group, China
18:10
TuP-T01-3
Poster (120 min)Growth and stress analysis of polycrystalline
diamond films on GaN membranes
T. Izak1 *, V. Jirásek1, G. Vanko2, J. Dzuba2, O.
Babchenko2, A. Kromka1
1Institute of Physics AS CR v.v.i., Czech Republic,2
Institute of Electrical Engineering SAV, Slovakia
18:10
TuP-T01-4
Poster (120 min)Effect of the operation parameters on the growth rate
and the uniformity of the GaN epitaxial layer in thevertical rotating-disk MOCVD reactor
C. Hu*, W.-J. Lin, J.-C. Chen
National Central University, Taiwan, R.O.C.
18:10
TuP-T01-5
Poster (120 min)Highly crystalline GaN thin film formed by GaN
sputtering method
M. Mesuda1 *, H. Kuramochi1, M. Shimizu2, T.
Takahashi2
1
TOSOH Corporation, Japan, 2National Institute ofAdvanced Industrial Science and Technology, Japan
18:10
TuP-T01-6
Poster (120 min)Impact on 100 MeV Ni7+ Ion Irradiated
AlGaN/AlN/GaN heterostructure grown by MOCVD
R. Ramesh1 *, K. Prabakaran1, S. Singh1, K. Asokan3, K.
Baskar1,2
1
Anna University, India, 2Manonmanium Sundaranar
University, India, 3Inter University Accelerator Centre,
India
18:10
TuP-T01-7
Poster (120 min)Growth and Characterization of Aluminum
Antimonides for Radiation Detectors
K. Cheewajaroen1 *, P. Saengkaew1, S. Sanorpim2, V.
Yordsri3, C. Thanachayanont3, N. Nuntawong4, W.
Rathanasakulthong51Department of Nuclear Engineering, 2Department of
Physics, Faculty of Science, Chulalongkorn University,
Thailand, 3National Metal and Materials Technology
Center (MTEC), 4National Electronic and Computer
Technology Center (NECTEC), National Science andTechnology Development Agency, Ministry of Scienceand Technology, Thailand, 5Kasetsart University,
Thailand
18:10
TuP-T01-8
Poster (120 min)Nitride heterostructure optimization by simulation
O. Rabinovich*, S. Legotin, S. Didenko, I. Fedorchenko,
Yu. Osipov
NUST MISiS, Russia
18:10
TuP-T01-9
Poster (120 min)
MOCDV and CBE of GaAs1-xNx modeled by ab initio
stabilities of (100) surfaces under As2, H2, and N2
H. Valencia, Y. Kangawa, K. Kakimoto
Kyushu University, Japan
18:10
TuP-T01-10 Poster (120 min)N–H related defect playing the role of acceptor
in GaAsN grown by chemical beam epitaxy
O. Elleuch*, L. Wang, K. H. Lee, K. Ikeda, N. Kojima,
Y. Ohshita, M. Yamaguchi
Toyota Technological Institute, Japan
18:10
TuP-T01-11 Poster (120 min)Self-induced growth of InAs nanowires on InP
Substrate by MOCVD
B. Li1 *, X. Yan2, X. Zhang2, X.-M. Ren3
1
State Key Laboratory of Information Photonics andOptical Communications, 2State Key Laboratory ofInformation Photonics and Optical Communications,
3State Key Laboratory of Information Photonics andOptical Communications, Beijing University ofPosts and Telecommunications, China
18:10
TuP-T01-12 Poster (120 min)34

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Growth and properties of novel oxide semiconductor
crystal In: β-Ga2O3
H.-L. Tang1 *, P. Luo1, F. Wu1, Q.-H. Wu2, J. Xu1
1Tongji University, China, 2Shanghai Institute of
Ceramics , Chinese Academy of Sciences, China
18:10
TuP-T01-13 Poster (120 min)SelectiveGrowth of GaN Nano-Columns on
Free-Standing GaN
C.-H. Huang*, K.-L. Wu, C.-C. Su, W.-I. Lee, Y.-C.
Chou
National Chia Tung University, Taiwan, ROC
18:10
TuP-T01-14 Poster (120 min)Growth and characterization of broad spectrum
infrared emitting GaInAsP/InP heterostructures
V. Rakovics1 *, J. Nádas2, I. Réti1, C. Dücső1, G.
Battistig1
1
Institute of Technical Physics and Materials Science,Centre for Energy Research, Hungarian Academy of
Sciences, Hungary, 2Óbuda University, Hungary
18:10
TuP-T01-15 Poster (120 min)Non-standard crystal orientations growth of gallium
phosphide using gs-MBE for integration withphotonic technologies
J-B. Barakat1 *, S. Dadgostar1, O. Bierwagen2, A.
Trampert3, W. T. Masselink1, F. Hatami1
1
Humboldt-University, Germany, 2Department of Epitaxy,
3
Department of Microstructure, Paul-Drude-Institute for
Solid State Electronics, Germany
18:10
TuP-T01-16 Poster (120 min)
Suppression of Electron Overflow in 370-nm
InGaN/AlGaN Ultraviolet Light Emitting Diodes withDifferent Insert Layer Thicknesses
Y. W. Wang1 *, S. H. Chang1, Y. Z. Chiou2, C. K.
Wang2
1
Department of Electro-Optical Engineering,2
Department of Electronic Engineering, Southern
Taiwan University of Science and Technology, Taiwan
18:10
TuP-T01-17 Poster (120 min)
Suppressing Efficiency Droop Using Graded
AlGaN/InGaN Superlattice Electron Blocking Layer
for InGaN-based Light-Emitting Diodes
K. C. Hung*, C. K. Wang, Y. Z. Chiou
Southern Taiwan University of Science and Technology,
Taiwan
18:10
TuP-T01-18 Poster (120 min)Growth and characterization of free-standing GaN
fabricated on GaAs substrate by HVPE
Y.-T. Cheng*, J.-J. Wu, T. Han, T.-J. Yu, G.-Y. Zhang
Peking University, China
18:10
TuP-T01-19 Poster (120 min)Morphology of AlN whiskers grown by reacting N2
gas and Al vapor
M. Matsumoto1 *, H. Saitou1, Y. Takeuchi1, S. Harada1,2,
M. Tagawa1,2, T. Ujihara1,2
1
Department of the Materials Science and Engineering,
2
Institute of Materials and Systems for Sustainability(IMaSS), Nagoya University, Japan
18:10
TuP-T01-20 Poster (120 min)
InAlGaAs/AlGaAs single quantum dots grown by

MBE emitting in the red range – on the
low-temperature broadening of single dot emission
line
T. Slupinski*, K. P. Korona, J. Borysiuk
University of Warsaw, Poland
18:10
TuP-T01-21 Poster (120 min)*Late
News
Research of influence of plasma chemical etchingmode GaAs surface roughness on the etched area
O. A. Ageev, V. S. Klimin*, A. V. Eskov, N. N. Petrov
Southern Federal University, Russia

TuP-T06
Materials for Optical Devices
18:10
TuP-T06-1
Poster (120 min)
Structural-phase state of highly-doped Nd3+:Y3Al5O12
laser ceramics obtained by reactive sintering
D. Yu. Kosyanov1 *, R. P. Yavetskiy2, V. N. Baumer2, I.
O. Vorona2, Yu. L. Kopylov3, V. B. Kravchenko3, V. L.
Voznyy4, A. I. Cherednichenko1, V. I. Vovna1, A. V.
Tolmachev2
1
Far Eastern Federal University, Russia, 2Scientific andTechnological Corporation “Institute for Single Crystals”
of NAS of Ukraine, Ukraine, 3Institute ofRadioengineering and Electronics named after V.A.
Kotelnikov (Fryazino Branch), Russian Academy of
Sciences, Russia, 4SE Holography Ltd., Ukraine
18:10
TuP-T06-2
Poster (120 min)Growth and optical characterization of
Ho3+/Yb3+-codoped PbF2 single crystal
P.-X. Zhang1,2 *, Z.-Q. Chen1,2, Z. Li1,2, A.-M. Li1,2, Y.
Hang3
1Guangdong Provincial Key Laboratory of Optical Fiber
Sensing and Communications, China, 2Jinan University,
China, 3Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, China
18:10
TuP-T06-3
Poster (120 min)Growth and preparation of PbI2 crystal for flexible
X-ray detector application
H. Sun1,2 *, B.-J. Zhao1, S.-F. Zhu1, X.-H. Zhu2, Z.-Y.
He1
1Sichuan University, China, 2Chengdu University ofInformation Technology, China
18:10
TuP-T06-4
Poster (120 min)Nanostructure for Hybrid Plasmonic-Photonic
Crystal Formed on Gel-Immobilized Colloidal
Crystal Observed by SEM after Solvent Exchange
S. Kawakami1, A. Mori2 *, K. Nagashima3, S.
Hashimoto2, M. Haraguchi2, T. Okamoto2
1
Department of Optical System Engineering, 2Institute ofTechnology and Science, Tokushima University, Japan,
3
Hokkaido University, Japan
18:10
TuP-T06-5
Poster (120 min)Conduction Type Control of RF Magnetron
Sputtered GaSb Thin Films on Ge(100) by theFormation of Native Defects
N. Nishimoto1 *, J. Fujihara2, K. Yoshino1
1
Shimane Institute for Industrial Technology, Japan,
2
Shimane University, Japan

35

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
18:10
TuP-T06-6
Poster (120 min)Effect of amine and aliphatic acid capping on
structural and morphological properties of
Cu2ZnSnS4 (CZTS) nanoparticles
C. Imla Mary, S. Anantha Kumar, S. Moorthy Babu*
Anna University, India
18:10
TuP-T06-7
Poster (120 min)Crystal growth mechanism and upconversion
luminescent properties of KLu2F7:Yb,Er nanocrystals
D. K. Xu*, H. Lin, A. M. Li, S. H. Yang, Y. L. Zhang
Sun Yat-Sen Universiry, China
18:10
TuP-T06-8
Poster (120 min)Single-Crystal InI: New Material for IR Optics
P. P. Fedorov1 *, S. V. Kuznetsov1, E. L. Chuvilina2,
A .A. Gasanov3, V. G. Plotnichenko4, P. A. Popov5,
V. V. Osiko1
1
Prokhorov General Physics Institute, Russian Academyof Sciences, Russia, 2LANHIT-LTD Moscow, Russia,
3
GIREDMET ASC ''Rosatom'' company, Russia, 4Fiber
Optics Research Center, Russian Academy of Sciences,
Russia, 5Petrovski Bryansk State University, Russia
18:10
TuP-T06-9
Poster (120 min)
Thermodynamic stability and electronic structure of
Mg–IV–V2 semiconductors: first-principles
calculations
J.-P. Xiao1,2 *, S.-F. Zhu1, B.-J. Zhao1, Z.-Y. He1, B.-J.
Chen1, H. Liu1, G. Jiang3
1
Department of Materials Science, Sichuan University,
China, 2Southwest University for Nationalities, China,
3
Institute of Atomic and Molecular Physics, Sichuan
University, China
18:10
TuP-T06-10 Poster (120 min)Deep Ultraviolet nonlinear optical crystal:
NaBe2BO3F2
S. Guo1,2, L.-J. Liu1 *, X.-Y. Wang1, Q. Huang1,2, Z.-Y.
Hou1,2, C.-T. Chen1
1
Technical Institute of Physics and Chemistry, Chinese
Academy of Science, China, 2University of Chinese
Academy of Sciences (UCAS), China
18:10
TuP-T06-11 Poster (120 min)Influence of Non-Phosphine Solvents on Structural,
Optical and Morphological Properties of Copper Tin
Selenide (Cu2SnSe3) Nanoparticles
S. Ananthakumar*, J. Ramkumar, S. Moorthy Babu
Anna University, India
18:10
TuP-T06-12 Poster (120 min)
High-Performance PhotodetectorBased on
Organolead Halide Perovskite Bulk Single Crystal
J. Ding*, Z.-P. Lian, H.-J. Fang, Q.-F. Yan
Tsinghua University, China
18:10
TuP-T06-13 Poster (120 min)Float zone growth of Yb:CaYAlO4 single crystals forultra-short pulse lasers
M. Narita1 *, M. Higuchi2,3, T. Ogawa3, S. Wada3, K.
Tadanaga2
1
Graduate school of Chemical Science and Engineering,2
Faculty of Engineering, Hokkaido University, Japan,
3
RIKEN, Japan
18:10
TuP-T06-14 Poster (120 min)Float zone growth of Cr,Yb:Y3Ga5O12 single crystals
for potential use in solar-pumped solid state lasers
M. Higuchi1,2 *, D. Ikutame1, T. Ogawa2, S. Wada2, K.
Tadanaga1
1
Hokkaido University, Japan, 2RIKEN, Japan
18:10
TuP-T06-15 Poster (120 min)
Evolution of Cr4+, Cr3+ and Cr2+ Contents in
Cr:Mg2SiO4 Single Crystals During those Prolonged
High-Temperature Oxidizing Annealing
K. A.Subbotin1, V. V.Slavkina2 *, D. A. Lis1, O. N. Lis1,
E. V. Zharikov1,2
1
A. M. Prokhorov General Physics Institute, Russia, 2D. I.
Mendeleyev University of Chemical Technology ofRussia, Russia
18:10
TuP-T06-16 Poster (120 min)Laser conditioning mechanism in improving damage
performance of KDP
W. Fengrui*, H. Jin, L. Qingzhi, G. Decheng, J.
Xiaodong, L. Hongjie, G. Feng
Laser Fusion Research Center, China Academy ofEngineering Physics, China
18:10
TuP-T06-17 Poster (120 min)Medium Temperature Hydrothermal Growth of
RbTiOPO4 (RTP) for Electro-Optic Application
H.T. Zhou1 *, Z.-G. Hu2, C.-L. Zhang1
1
China Nonferrous Metals (Guilin) Geology and Mining
Co., Ltd, China, 2Technical Institute of Physics andChemistry, Chinese Academy of Sciences, China
18:10
TuP-T06-18 Poster (120 min)Synthesis of Cu2ZnSn1-xGexS4 by solid state reaction:
Structural properties
M. Tablaoui1 *, M. Derbal2, K. Lebbou3
1
Centre de Recherche en Technologie desSemi-conducteurs pour l’Energétique Algiers, Algeria,
2
LASICOM, Physics Dept., Blida1 University, Algeria,
3Institut Lumière Matière, UMR5306 Université Lyon
1-CNRS, France
18:10
TuP-T06-19 Poster (120 min)Growth of ZnGeP2, CdGeAs2, LiInSe2 crystals fornonlinear optical devices
C.-H. Yang1 *, Z.-T. Lei1, C.-Q. Zhu1, T.-H. Ma1, L.-C.
Song1, G. Alex Verozubuva2, A. O. Okunev3
1
Harbin Institute of Technology, China, 2Institute ofMonitoring and Ecological System SB RAS, Russia,
3
Yaroslav-the-Wise Novgorod State University, Russia
18:10
TuP-T06-20 Poster (120 min)Domain wall engineering contributes to the enhanced
photovoltaic effect in the [011]c-oriented tetragonal
PIN-PMN-PT:Mn single crystals
Y. M. Zhou1 *, Q. Li1, C. Xu1, N. N. Luo1, Q. F. Yan1, Y.
L. Zhang2, X. C. Chu2
1
Department of Chemistry, 2State Key Laboratory of New
Ceramics and Fine Processing, Tsinghua University,
China
18:10
TuP-T06-21 Poster (120 min)Electrodeposition of Si-film directly from reductionof the Silicon Dioxide Powder for the Application ofSolar Cell
M. M. Islam*, K. Akimoto36

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
University of Tsukuba, Japan
18:10
TuP-T06-22 Poster (120 min)Preparation of Exfoliated CdZnTe Polycrystalline
Thick Films Based on Stress Mismatch Mechanism
X.-Y. Gao1,2 *, S.-F. Zhu1, B.-J. Zhao1, X.-H. Zhu2, H.
Sun2, D.-Y. Yang2
1
Sichuan University, China, 2Chengdu University ofInformation Technology, China
18:10
TuP-T06-23 Poster (120 min)InSb Quantum Nanostructures on InGaAs/GaAs
Substrates and Their Photoluminescence Properties
S. Thainoi1, S. Kiravittaya2 *, S. Sopitpan3, S.
Kanjanachuchai1, S. Ratanathammaphan1, S.
Panyakeow1
1
Chulalongkorn University, Thailand, 2Naresuan
University, Thailand, 3Thailand Microelectronics Center(TMEC), National Science and Technology Development
Agency (NSTDA), Thailand
18:10
TuP-T06-24 Poster (120 min)Intense 2.89 μm emission from Dy3+/Yb3+ codoped
PbF2 crystal by 970 nm laser diode pumping
P.-X. Zhang1,2 *, Z.-Q. Chen1,2, Z. Li1,2, A.-M. Li1,2, Y.
Hang3
1Guangdong Provincial Key Laboratory of Optical Fiber
Sensing and Communications, China, 2Jinan University,
China, 3Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, China
18:10
TuP-T06-25 Poster (120 min)Epitaxial Growth of Iron Disilicide Thin Film on
4H-SiCK. Akiyama1,2 *, T. Kadowaki1, Y. Hirabayashi1, Y.
Matsumoto1, H. Funakubo2
1
Kanagawa Industrial Technology Center, Japan
2
Tokyo Institute of Technology, Japan
18:10
TuP-T06-26 Poster (120 min)
Optimization of the growth of erbium doped YAG
and Er-Tm co-doped YAG fibers by the
micro-pulling down technique
A. Laidoune*, D. Bahloul
Université Batna 1, Algeria
18:10
TuP-T06-27 Poster (120 min)
Fabrication of YH3thin film using Pd/Ni overlayer
K. Yabuki1 *, M. Sakai1, K. Iizasa1, K. Higuchi2, A.
Kitajima2, S. Hasegawa2, O. Nakamura3
1
Saitama UniversityJapan, 2Osaka University, Japan,
3
Okayama University of Science, Japan
18:10
TuP-T06-28 Poster (120 min)Third-order Nonlinear Optical Characteristics of
KDP and DKDP Crystals
D.-L. Wang1, 2, T.-B. Li3, S.-L. Wang1, 2 *, J. Wang1, J.-X.
Ding4, W.-D. Li1, P.-P. Huang1, 2
1State Key Laboratory of Crystal Materials and Instituteof Crystal Materials, 2Key Laboratory of Functional
Crystal Materials and Device, Shandong University,
China, 3Taishan University, China, 4Shandong
University of Science and Technology, China
18:10
TuP-T06-29 Poster (120 min)Preparation and evaluation of Cu2ZnSnS4
polycrystals

M. Kotani1 *, H. Miura1, Y.-G. Shim2, K. Wakita1
Chiba Institute of Technology, Japan, 2Osaka
Prefecture University, Japan
18:10
TuP-T06-30 Poster (120 min)Luminescent Properties of Cr-doped Alexandrite
Crystal in the Red/Infrared Emission for Radiation
Therapy
S. Kurosawa1 *, A. Yamaji2, V. V. Kochurikhin3,4, T.
Horiai2, Y. Shoji2,4, Y. Ohashi2, Y. Yokota1, K.
Kamada1,4, A. Yoshikawa1, 2, 4
1
New Industry Creation Hatchery Center, 2Institute forMaterials Research, Tohoku University, Japan, 3General
Physics Institute, Russia, 4C&A Corp., Japan
18:10
TuP-T06-31 Poster (120 min)Recent progress in KBe2(BO3)F2 crystal growth andapplications
X.-Y. Wang*, K. Li, B. Xu, L.-J. Liu, F.-D. Fan, C.-T.
Chen
Technical Institute of Physics and Chemistry, Chinese
Academy of Sciences, China
18:10
TuP-T06-32 Poster (120 min)Compositional control of epitaxial CuInS2 films
K. Kanamaru1 *, T. Po-Han1, K. Kyan1, Y.-G. Shim2, K.
Wakita1
1
Chiba Institute of Technology, Japan, 2Osaka
Prefecture University, Japan
18:10
TuP-T06-33 Poster (120 min)
Fabrication and characterization of magneto-optic
properties of rare-ions doped terbium gallium garnet
single crystals
Z. Chen*, L. Yang, X. Ming, X.-Y. Wang, Y. Hang
Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, China
18:10
TuP-T06-34 Poster (120 min)Growth and optical properties of LiLuF4 crystal
co-doped with Ho3+ and Pr3+ at 2.9 μm
Y. Hang1 *, P.-X. Zhang1,2, L.-H. Zhang1,2, J.-Q. Hong1,2,
Z. Chen1,2, X.-Y. Wang1,2, Y. Wang1,2, G.-Z. Chen1,2
1
Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, China, 2Graduate Schoolof Chinese Academy of Sciences, China
18:10
TuP-T06-35 Poster (120 min)Deep-Ultraviolet Nonlinear Optical Phosphate
Crystal: KBa2(PO3)5
P. Shan1 *, T.-Q. Sun1, H.-D. Liu1, X.-W. Liu3, Y.-F.
Kong1,2, J.-J. Xu1,2
1
Nankai University, China, 2Nankai University, China,
3Northeastern University at Qinhuangdao, China.
18:10
TuP-T06-36 Poster (120 min)
Structural and electronic properties of carbon
impurity in barium zirconate
Meaad AL-Hadidi, J. P. Goss, Oras A. Al-Ani*, P. R.
Briddon, M. J. Rayson
Newcastle University, UK
18:10
TuP-T06-37 Poster (120 min)Synthesis and characterization of Bifunctional
Fe3O4/SiO2/CsLa(WO4)2:Eu3+ Nanocomposites withcore-shell structure for Biomedical application
D. Balaji, S. Moorthy Babu*
1

37

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Anna University, India
18:10
TuP-T06-38 Poster (120 min)*Late
News
Sol-gel Synthesis and Magnetic characterization on
NaFe(WO4)2 Sub-micron Rods
A. Durairajan1,2 , M. A. Valente2, S. Moorthy Babu1 *1Anna University, India, 2University of Aveiro, Portugal
18:10
TuP-T06-39 Poster (120 min)Crystal Growth and Optical Characteristics of
Non-Centrosymmetric Polyphosphate CsLa(PO3)4and KLa(PO3)4 with Deep-Ultraviolet Transparency
T.-Q. Sun1 *, P. Shan1, H. Chen1, H.-D. Liu1, S.-L.
Chen1,2, X.-W. Liu3, Y.-F. Kong1,2 J.-J. Xu1,2
1
The MOE Key Laboratory of Weak-Light Nonlinear
Photonics and School of Physics, 2Teda Institute ofApplied Physics, Nankai University, China,
3Northeastern University at Qinhuangdao, China

TuP-T09
Nitride Semiconductors
18:10
TuP-T09-1
Poster (120 min)Epitaxial growth of a self-separated GaN crystal byusing a novel high temperature annealing porous
template
L. Zhang*, Y.-L. Shao, Y.-Z. Wu, X.-P. Hao
Jinan, Shandong, China
18:10
TuP-T09-2
Poster (120 min)Investigation on morphology, growth mode andindium incorporation of MOCVD grown
InGaN/n-GaN heterostructures
K. Prabakaran1 *, S. Surender1, S. Pradeep1, R.
Loganathan, P. Arivazhagan1,R .Ramesh1, Shubra Singh1,
K. Baskar1,2
1Anna University, India, 2Manonmaniam Sundaranar
University, India
18:10
TuP-T09-3
Poster (120 min)Effect of growth temperature on InGaN/GaN
Heterostructures grown by Metal Organic Chemical
Vapor Deposition (MOCVD)
S.Surender1 *, K. Prabakaran1, R. Ramesh1, R.
Loganathan1, S. Pradeep1, Subhra Singh1, K. Baskar1,2
1Anna University, India, 2Manonmniam Sundaranar
University, India.
18:10
TuP-T09-4
Poster (120 min)Self - catalytic growth of AlN microrods on sapphire
substrate
B. Kuppulingam1 *, Shubra Singh1, K. Baskar1, 2
1Anna University, India, 2Manonmaniam Sundaranar
University, India
18:10
TuP-T09-5
Poster (120 min)Effect of AlN interlayer in AlGaN/GaN
heterostructures grown by MOCVD
S. Sankaranarayanan1 *, R. Loganathan1, K. Prabakaran1,
B. Kuppulingam1, S. Surender1, S. Pradeep1, Shubra
Singh1, K. Baskar1,2
1Anna University, India, 2Manonmaniam Sundaranar
University, India
18:10
TuP-T09-6
Poster (120 min)
Strain of M-planeGaN epitaxial layer grown on

β-LiGaO2(100) Byplasma-assisted molecular beam
epitaxy
S.-T. You1 *, I. Lo1, H.-C. Shih1, M. Chou2, H.-C.
Huang2
1
Department of Physics, Center for Nanoscience andNanotechnology, 2Department of Materials andOptoelectronic Science, National Sun Yat-Sen University,
Taiwan
18:10
TuP-T09-7
Poster (120 min)
Si9+ swift heavy ions irradiation studies on AlGaN
based double heterostructures
P. Arivazhagan1 *, R. Ramesh1, S. Singh1, K. Asokan2, K.
Baskar1,3
1
Anna University, India, 2Inter-University Accelerator
Centre (IUAC), India, 3Manonmaniam Sundaranar
University, India
18:10
TuP-T09-8
Poster (120 min)Formation of Eu,Si codoped AlN thin films on Si
substrate by reactive co-sputtering for heterojunction
visible light emitting diodeK. Iwade*, H. Katsumata
Meiji University, Japan
18:10
TuP-T09-9
Poster (120 min)Growth of InAlN/GaN heterostructures by MOCVD
S. Pradeep1 *, S. Surender1, K. Prabakaran1, S. Sanjay1, S.
Sankara Narayanan1, R. Loganathan1, R. Ramesh1,
Shubra Singh1, K. Baskar1,2
1Anna University, India, 2Manonmaniam Sundaranar
University, India
18:10
TuP-T09-10 Poster (120 min)Controlling Impurities and Doping Characteristics of
Si- and Mg-doped AlGaN with High Al Content
A. Mishima1 *, K. Ikenaga1, Y. Yano1, C.-L. Tsai2, Y.-K.
Fu2, T. Tabuchi1, K. Matsumoto1
1
Taiyo Nippon Sanso Corporation, Japan, 2Industrial
Technology Research Institute, Taiwan, R.O.C.
18:10
TuP-T09-11 Poster (120 min)
Si concentration dependence of laser oscillation
characteristics in AlGaN multiple quantum wellactive layer
T. Senga1 *, N. Nagata1, M. Iwaya1, T. Takeuchi1, S.
Kamiyama1, I. Akasaki2
1
Meijo Univ., Japan, 2Akasaki Research Center, Nagoya
Univ., Japan
18:10
TuP-T09-12 Poster (120 min)Epitaxy of InGaN/GaN Multiple Quantum Wells on
GaN Hexagonal Pyramids Template
X. Q. Xiu *, S. Y. Zhang, X. M. Hua, Z. L. Xie, R.
Zhang, P. Han, P. Chen, D. J. Chen, Y. D. Zheng
Nanjing University, China
18:10
TuP-T09-13 Poster (120 min)Surface nitridation of r-plane sapphire substrateand Ga-Al solution growth of AlN on the substrate
M. Adachi, H. Fukuyama
Tohoku University, Japan
18:10
TuP-T09-14 Poster (120 min)
GaN Growth on a-plane SiC Substrate with an
Ultrathin Interlayer
Z. Sun1 *, K. Nagamatsu1, M. Deki1, S. Nitta1, Y. Honda1,

38

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
H. Amano1,2,3
1
Department of Electrical Engineering and Computer
Science, 2Akasaki Research Center, 3Institute ofMaterials and Systems for Sustainability (IMaSS),
Nagoya University, Japan
18:10
TuP-T09-15 Poster (120 min)Investigation on temperature gradient evolution of
2-inch AlN bulk crystal growth by numericalsimulations
Z. H. Wang*, K. Cao, L. X Liu, L. Wu
Shanghai University, China
18:10
TuP-T09-16 Poster (120 min)Dependence of Flux Composition on Void Formationin the Coalescence Growth of GaN Crystals by the
Na-flux Method
M. Honjo*, M. Imanishi, H. Imabayashi, K. Nakamura,
K. Murakami, D. Matsuo, M. Maruyama, M. Imade, M.
Yoshimura, Y. Mori
Osaka University, Japan
18:10
TuP-T09-17 Poster (120 min)Emission Efficiency Improvement of Deep Ultraviolet
Light-Emitting AlGaN Multiple Quantum Wells
Grown on N-AlGaN Underlying Layers
L. Li*, Y. Miyachi, M. Miyoshi, T. Egawa
Nagoya Institute of Technology, Japan
18:10
TuP-T09-18 Poster (120 min)
Improvement of reproducibility of GaN LAIMCE by
MOMBE using a low-pressure microplasma
treatment
Y. Kusakabe1 *, Y. Nagatsu1, S. Suzuki1, T. Maruyama1,
K. Shimizu2, S. Naritsuka1
1
Meijo University, Japan, 2Shizuoka University, Japan
18:10
TuP-T09-19 Poster (120 min)Growth of GaN on trench patterned non-polar bulk
GaN substrates
S. Okada1 *, H. Iwai1, H. Miyake1,2, K. Hiramatsu1
1
Department of Electrical and Electronic Engineering,2
Graduate School of Regional Innovation Studies, Mie
University, Japan
18:10
TuP-T09-20 Poster (120 min)Effect of buffer-layer growth temperature andthermal annealing conditions on a-plane AlN films
grown on r-plane sapphire
C.-H. Lin1 *, Y. Yamashita1, H. Miyake1,2, K. Hiramatsu1
1
Graduate School of Engineering, 2Graduate School ofRegional Innovation Studies, Mie University, Japan
18:10
TuP-T09-21 Poster (120 min)
N-Polar Eu-doped GaN Grown by Organometallic
Vapor Phase Epitaxy
R. Fuji*, A. Koizumi, T. Inaba, Y. Fujiwara
Osaka University, Japan
18:10
TuP-T09-22 Poster (120 min)Effect of NH3 flow rate on Microchannel Epitaxy of
GaN by Liquid Phase Electroepitaxy using mesa
shaped GaN template substrate
D. Kambayashi*, Y. Mizuno, T. Maruyama, S. Naritsuka
Meijo University, Japan

39

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Wednesday, 10 August
Plenary 5
Wednesday morning, 10 August, 8:30
Shirotori Hall
8:30
Plenary Lecture (40 min)Growth of nitride crystals to solve global issues
Hiroshi Amano*
Nagoya University, Japan
Coffee break
Wednesday morning, 10 August, 9:10
Event Hall, Shirotori Hall
Session We1
Wednesday morning, 10 August, 9:40
G01, G03, G05, G06, J01, T01, T04, T06, T09

We1-G01
Fundamentals of Nucleation and Crystal Growth
Room: Oral 6
9:40
We1-G01-1
Invited oral (25 min)Imaging crystalline evolution in organic and protein
systems
B. Rybtchinski*
Weizmann Institute of Science, Israel
10:05
We1-G01-2
Oral (15 min)Crystal Networks in Fibrous Soft Materials: From
Hierarchical Structure to Ultra-Performance
X. Y. Liu*
National University of Singapore, Singapore/ResearchInstitute for Biomimetics and Soft Matter, Xiamen
University, China
10:20
We1-G01-3
Oral (15 min)The Study for Metastable Zone and Crystal Growthof CL-20 in Ethylacetate/toluene System by
Solventing-out Crystallization
H.-Z. Li1 *, H.-F. Xu1,2, X.-H. Duan2, R. Xu1
1
Institute of Chemical Materials, China Academy ofEngineering Physics, China, 2Southwest University of
Science and Technology, China
10:35
We1-G01-4
Oral (15 min)Investigation on the bulk growth of inversely soluble
α-LiIO3 single crystals and the influence of pH on its
structural, morphological and optical characteristics
P. Rajesh1*, A. Silambarasan1, P. Ramasamy1, A. K.
Karnal2, Rajeev Bhatt2, Indranil Bhaumik2, P. K. Gupta2
1
SSN College of Engineering, India, 2Raja Ramanna
Centre for Advanced Technology, India
10:50
We1-G01-5
Oral (15 min)
Evolutionary behaviour of the polymorphic mole
fractions during crystallisation of pure andglycine-doped L-glutamic acid
M. Rusin1, R. Ristic1 *, T. Gnutzmann2, F. Emmerling2
1
The University of Sheffield, UK, 2BAM Federal Institutefor Materials Research and Testing, Germany
11:05
We1-G01-6
Oral (15 min)A study on nucleation kinetics, growth andcharacterization of hydrated borate
Na2B4O5(OH)4.H2O single crystal – A third order
NLO material
C. Ramki*, R. Ezhil Vizhi
VIT University, India
11:20
We1-G01-7
Oral (15 min)Laser-Heated Pedestal Growth and optical propertiesof 50 at % (Ho3+) - doped YAG
B. Rekik1 *, K. Lebbou2
1
University of Blida 1, Algeria, 2UMR5306 Université
Lyon1-CNRS, Université de Lyon, France
11:35
We1-G01-8
Oral (15 min)Growth and characterization of Sodium Sulphateoxalate single crystal - metal organic non-linear
optical material
D. S. Ajisha, R. Ezhil Vizhi*
VIT University, India

We1-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
Room: Oral 2
9:40
We1-G03-1
Invited oral (25 min)Droplet epitaxy of complex III-V nanostructures
Stefano Sanguinetti*, S. Bietti
Universita' di Milano Bicocca, Italy
10:05
We1-G03-2
Oral (15 min)Synthesis of Nanocrystalline TiO2 Nanorods via
Hydrothermal Method: An Efficient Photoanode
Material for Dye Sensitized Solar Cells
R. Govindaraj*, N. Santhosh, M. Senthil Pandian, P.
Ramasamy
SSN College of Engineering, India
10:20
We1-G03-3
Oral (15 min)Influence of CaSO4-CaCO3 hierarchical whiskers on
PVC composite
H.-Y. Chen, P.-Y. Ma*, J. Liang, L. Xiang
Tsinghua University, China
10:35
We1-G03-4
Oral (15 min)Influenceof Alkyl Trimethyl Ammonium Bromideson
Hydrothermal Formation of α-CaSO4·0.5H2O
Whiskerswith High Aspect Ratios
R.-S. Chen*, S.-C. Hou, L. Xiang
Tsinghua University, China
10:50
We1-G03-5
Oral (15 min)Urea assisted SnO2 structures for dye sensitized solar
cell application
M. Tarini*, N. Mani, Y. Hayakawa
Shizuoka University, Japan.
11:05
We1-G03-6
Oral (15 min)Synthesis of α-In2S3/In2O3 nanowire heterostructureswith enhanced photo-induced charge separation
efficiency
L.-C. Tien*, J.-L. ShihNational Dong Hwa University, Taiwan
11:20
We1-G03-7
Oral (15 min)
Flux growth of titanate-based crystals and theirapplication to Li ion recovery

40

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
F. Hayashi1,2 *, K. Ogawa1, X. Xiao2,3, S. Selcuk4, A.
Selloni4, K. Teshima1,2,5
1Department of Chemistry and Materials Engineering,2
Global Aqua Innovation Center, 3Department ofMaterials Science and Engineering, Interdisciplinary
Graduate School of Science and Technology, Shinshu
University, Japan, 4Princeton University, USA, 5Center
for Energy and Environmental Science, Shinshu
University, Japan

We1-G05
Organic and Biological Crystallization
Room: Oral 3
9:40
We1-G05-1
Invited oral (25 min)
Biogenic and Biomimetic Arrayed Nanocrystals
H. Imai1 *, M. Suzuki1, K. Nakamura1, K. Nakajima1, Y.
Nagai1, Y. Oaki1, Y. Nagai2, T. Toyofuku2
1
Keio University, Japan, 2Japan Agency for
Marine-Earth Science and Technology, Japan
10:05
We1-G05-2
Invited oral (25 min)Growth of high-quality and large protein crystals by
new seeding techniques
S. Sugiyama1,2 *, N. Shimizu3, K. Kakinouchi4, M.
Maruyama3, H. Matsumura4,5, H.Y. Yoshikawa6, Y.
Takahashi3, M. Yoshimura3, H. Adachi4, K. Takano4,7, S.
Murakami4,8, T. Inoue3,4, M. Murata1,2, Y.
Mori3,4
1
Graduate School of Science, Osaka University, Japan,
2JST, ERATO, Japan, 3Graduate School of Engineering,Osaka University, Japan, 4SOSHO Inc., Japan,
5
Ritsumeikan University, Japan, 6Saitama University,
Japan, 7Kyoto Prefectural University, Japan, 8Tokyo
Institute of Technology, Japan
10:30
We1-G05-3
Oral (15 min)Large-volume protein crystal growth
M. Gonik1 *, E. Rogulin2
1
Centre for Material Researches (PHOTON), Russia,
2
Max von Pettenkofer-Institute (LMU), Germany
10:45
We1-G05-4
Oral (15 min)Protein Crystallization by Slow Evaporation ofPrecipitant-free Solution in the Presence ofHydrochloric Acid
Y. Suzuki1 *, T. Fujiwara2, S. Ueta1
1
Institute of Technology and Science, 2Institute of
Scio-Arts and Sciences, Tokushima University, Japan
11:00
We1-G05-5
Oral (15 min)Photochemically-induced crystallization of lysozyme
T. Okutsu*, T. Taguchi, Y. Takase, M Utsumi, H.
HoriuchiGunma University, Japan
11:15
We1-G05-6
Oral (15 min)
Time-resolved X-ray Observation of 10-18 – 10-15 N(Newton) force-field in Inorganic and Protein
Supersaturated solution
Y. Matsushita1 *, H. Sekiguchi2, N. Ohta2, K. Ikezaki1, Y.
Goto3, Y. C. Sasaki1,2
1
The University of Tokyo, Japan, 2SPring-8, Japan,
3
Osaka University, Japan

We1-G06
Bulk Crystal Growth
Room: Oral 10
9:40
We1-G06-1
Invited oral (25 min)
Ø1.5” Crystal Growth of High Performance Ternary
Scintillators
M. Zhuravleva1,2 *, A. C. Lindsey1,2, L. Stand1, Y. Wu1,2,
M. A. Koschan1, C. L. Melcher1,2
1
Scintillation Materials Research Center, 2Department ofMaterials Science and Engineering, University ofTennessee, USA
10:05
We1-G06-3
Oral (15 min)Anisotropy influence of RE-doped rubidium lead
chloride single crystals on optical and luminescence
properties
R. Král1 *, V. Jarý1, J. Šulc2, H. Jelínková2, M. Fibrich2,
K. Nitsch1, A. Bystřický1, P. Zemenová1, M. Nikl1
1
Institute of Physics, Czech Academy of Sciences, Czech
Republic, 2Czech Technical University in Prague, Czech
Republic
10:20
We1-G06-4
Oral (15 min)Multifunctional borates RM3(BO3)4 of huntite family:
Half a century of progress in crystal growth andcharacterization
N. I. Leonyuk*
Moscow State University, Russia
10:35
We1-G06-5
Oral (15 min)Comparative study of crystal growth from different
flux systems and spectroscopic properties of(Er,Yb):LuAl3(BO3)4 laser material
V. V. Maltsev1, N. I. Leonyuk1 *, D. A. Naprasnikov1, K.
N. Gorbachenya2, V. E. Kisel2, A. S. Yasukevich2, N. V.
Kuleshov2
1
Department of Crystallography and Crystal Chemistry,
Moscow State University, Russia, 2Belarusian National
Technical University, Belarus
10:50
We1-G06-6
Oral (15 min)
Structural, thermal, laser damage, photoconductivity,
NLO and mechanical properties of AgGa0.5In0.5Se2
single crystal
P. Vijayakumar*, P. Ramasamy
SSN College of Engineering, India
11:05
We1-G06-7
Oral (15 min)Growth and Characterization of Re3+:CALGO
Crystals for Ultrafast Laser Application
Q.-Q. Hu, Z.-T. Jia*, Y.-R. Yin, C.-M. Dong, X.-T. Tao
Shandong University, China
11:20
We1-G06-8
Oral (15 min)Research on the Growth and Inclusions of 5 Inches
YCOB Crystals
X. N. Tu1,2 *, K. N. Xiong1, Y. Q. Zheng1, B. H. Jiang1,2,
S. L. Cao1,2, E. W. Shi1
1
Shanghai Institute of Ceramics, Chinese Academy of
Sciences, China, 2University of Chinese Academy of
Sciences, China

We1-J01
Growth Simulation and Practice41

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Room: Oral 8
9:40
We1-J01-1
Invited oral (25 min)Enhancement of Heat Transfer in Czochralski
Growth of Large Size Crystals/High Pulling Ratewith a Chemical Cooling Technique
J.-L. Ding, L.-J. Liu*, W.-H. Zhao
Xi’an Jiaotong University, China
10:05
We1-J01-2
Oral (15 min)Fully Three Dimensional Numerical Analysis ofIndustrial Scale Silicon Czochralski Growth with aTransverse Magnetic Field
R. Yokoyama1 *, T. Nakamura1, T. Fujiwara1, K.
Hamaogi2, K. Takatani2
1
SUMCO Corp.Japan, 2Nippon Steel & Sumitomo Metal
Corp., Japan
10:20
We1-J01-3
Oral (15 min)Efficient prediction of silicon Czochralski growthunder the effect of a strong transverse or ovoid
magnetic field
R. Rolinsky1, N. Van den Bogaert1, F. Dupret1, 2 *1
FEMAG S. A., Louvain-la-Neuve, Belgium, 2 niversite
catholique de Louvain, Belgium
10:35
We1-J01-4
Oral (15 min)
The relation between interface attachment kinetics,
capillarity and heat transfer and evolving
Czochralski grown oxide crystal shapes
O. Weinstein1, W. Miller2, S. Brandon1 *1
Technion, Haifa, Israel, 2Leibniz Institute for Crystal
Growth, Germany
10:50
We1-J01-5
Oral (15 min)Temperature and stress distribution during growth ofβ-Ga2O3 single crystals by the Czochralski method:
numerical calculations
K. Bottcher1, Z. Gałazka1, W. Miller1 *, J. Schreuer2
1
Leibniz Institute of Crystal Growth (IKZ), Germany,
2
Ruhr University Bochum, Germany
11:05
We1-J01-6
Oral (15 min)Strategies for feedforward and feedback control of
the Vertical Gradient Freeze (VGF) crystal growth
process
S. Ecklebe1 *, J. Winkler1, F. Woittennek2, J. Rudolph3
1
Dresden University of Technology, Germany, 2UMIT University for Health Sciences, Austria, 3Saarland
University, Germany
11:20
We1-J01-7
Oral (15 min)Investigation of Heat Transfer and Thermal Stress in
Sapphire Crystal by Heat Exchanger Method Basedon Different Radiation Models
W. C. Ma1,2 *, L .J. Liu1
1
Xi’an Jiaotong University, China, 2Uonone
Optoelectronics Technology Co., Ltd., China

We1-T01
III-V Semiconductors
Room: Oral 99:40
We1-T01-1
Invited oral (25 min)Digital Alloy Growth of AlInAsSb for Low Noise
Avalanche Photodetectors
S. R. Bank1 *, S. J. Maddox1, A. K. Rockwell1, W. Sun2,J. C. Campbell2
1
University of Texas, USA, 2University of Virginia, USA
10:05
We1-T01-2
Oral (15 min)Epitaxial growth and characterization of AlxIn1-xSb
barrier layer for high performance MWIR InSb
photodetector
H. Park1 *, S. Park1, D.-M. Geum1, W. J. Choi2, Y.
Park1,3, E. Yoon1,3
1
Dept. of Material Science and Engineering, Seoul
National University, Korea, 2Korean Institute of Scienceand Technology, Korea, 3Advanced Institutes ofConvergence Technology (AICT), Seoul National
University, Korea
10:20
We1-T01-3
Oral (15 min)Morphology of Self-Assembled InSb/GaAs Quantum
Dots on Ge Substrate
Zon1 *, T. Poempool1, S. Kiravittaya2, S. Sopitpan3, S.
Thainoi1, S. Kanjanachuchai1, S. Ratanathammaphan1, S.
Panyakeow1
1
Chulalongkorn University, Thailand, 2Naresuan
University, Thailand, 3National Science and Technology
Development Agency (NSTDA), Thailand
10:35
We1-T01-4
Oral (15 min)
Bulk Crystal Growth of n-type InSbBi and
Fabrication of p-n Junction by Ion Implantation
D. Maske1 *, M. Deshpande2, D. Gadkari3, D. Devi4, B.
Mohan Arora5
1
D. G. Ruparel College, India, 2Jai Hind College, India
3
Mithibai College, India, 4Inter University Accelerator
Centre, India, 5I. I. T. Bombay, India

We1-T04
II-VI and Oxide Materials
Room: Oral 4
9:40
We1-T04-1
Invited oral (25 min)Growth of ZnO Nanostructures for Functional
Applications
A. Zappettini*, D. Calestani, M. Villani, L. Lazzarini, M.
Culiolo, D. Delmonte and N. Coppedè
IMEM-CNR, Italy
10:05
We1-T04-2
Invited oral (25 min)Growth of CdZnTe for detector applications
E. Diéguez*
Universidad Autónoma de Madrid, Spain
10:30
We1-T04-3
Oral (15 min)Experimental and Numerical Study on Growth ofHigh-Quality ZnO Single-Crystal Microtubes by
Optical Vapor Supersaturated Precipitation Method
Q. Wang*, Y.-Z. Yan, Y. Zeng, Y.-J. Jiang
Beijing University of Technology, China
10:45
We1-T04-4
Oral (15 min)Floating-Zone crystallization of oxides under elevatedoxygen pressure
K. Conder*, E. Pomjakushina
Paul Scherrer Institute, Switzerland
11:00
We1-T04-5
Oral (15 min)Hydrothermal Growth and Characterization of
ZnO:Sc Single Crystals
J.-L. Wang*, M.-D. Ren, Y.-B. Zuo

42

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
China Nonferrous Metal (Guilin) Geology and Mining
Co., Ltd., China
11:15
We1-T04-6
Oral (15 min)Study on migration of Te inclusions under travelingcycle annealing in CdZnTe crystals
N. Jia1 *, Y. Xu1,2, W. Jie1, Y. Gu1, X. Fu1
1
Northwestern Polytechnical University, China, 2Nanjing
University, China
11:30
We1-T04-7
Oral (15 min)Behaviors of Te precipitates in CdZnTe radiation
detector materials grown by Modified Vertical
BridgmanJ. Wanqi*, Z. Gangqiang, W. Tao, X. Yadong, X.
Lingyan
Northwestern Polytechnical University, China

We1-T06
Materials for Optical Devices
Room: Oral 7
9:40
We1-T06-1
Invited oral (25 min)Growth and Properties of Mid-infrared Nonlinear
Optical Crystals
S.-P Wang1,2 *, N. Jia1, J. Qiao1, C.-L. Li1, X.-T. Tao1,2
1State Key Laboratory of Crystal Materials, 2Key
Laboratory of Functional Crystal Materials and Device,
Shandong University, Ministry of Education, China
10:05
We1-T06-3
Oral (15 min)
LiGaGe2S6: A New Mid-IR Nonlinear Optical
Material With a Large Band Gap andCongruent-melting Property
D.-J. Mei1 *, S.-Y. Zhang1, F. Liang2, Y.-D. Wu1, Z.-S.
Lin2
1
Shanghai University of Engineering Science, China,
2Technical Institute of Physics and Chemistry, Chinese
Academy of Sciences, China
10:20
We1-T06-4
Oral (15 min)Single and double-element doped GaSe for nonlinear
applications
K. Kokh1,2,3 *, Yu. Andreev3,4,5, V. Svetlichnyi3,5, A.
Kokh1
1
Institute of Geology and Mineralogy SB RAS, Russia,
2
Novosibirsk State University, Russia, 3High Current
Electronics Institute SB RAS, Russia, 4Institute ofMonitoring of Climatic and Ecological Systems SB RAS,
Russia, 5Siberian Physical–Technical Institute of Tomsk
State University, Russia
10:35
We1-T06-5
Oral (15 min)Liquid Phase Growth of Stoichiometry controlled
GaSe Crystals for highly efficient THz generation
Y. Sato*, K. Suzuki, K. Maeda and Y. Oyama
Tohoku University, Japan
10:50
We1-T06-6
Oral (15 min)Two-temperature synthesis of non-linear opticalmaterial CdGeAs2
C.-Q. Zhu1,G. Alex Verozubova2 *, Y. P. Mironov3, A.
Yu. Trofimiv2, A. I. Chernishev4, Z.-T. Lei1, L.-C. Song1,
T.-H. Ma1, C.-H. Yang1
1
Harbin Institute of Technology, China, 2Institute ofMonitoring of Climatic and Ecological System SB RAS,

Russia, 3Institute of Strength Physics and Material
Science SB RAS, Russia, 4Tomsk State University, Russia
11:05
We1-T06-7
Oral (15 min)
New LiGaTe2 crystal thermal data
S. Grazhdannikov1 *, A. Kurus’1,2, L. Isaenko1,3, P.
Krinitsyn1, V. Drebuschak1
1
V. S. Sobolev Institute of Geology and Mineralogy,
Russia, 2Nikolaev Institute of Inorganic Chemistry,Russia, 3Novosibirsk State University, Russia

We1-T09
Nitride Semiconductors
Room: Oral 1
9:40
We1-T09-1
Invited oral (25 min)Point Defect Management in Bulk AlN and AlGaN
Epitaxial Films
R. Collazo1 *, I. Bryan1, Z. Bryan1, D. Alden1, S. Mita2,
B. E. Gaddy1, J. Tweedie2, A. Franke1, R. Kirste1,2, T.
Kinoshita3,Y. Kumagai4, A. Koukitu4, D. L. Irving1, Z.
Sitar1
1
North Carolina State University, USA, 2Adroit
Materials, Cary, USA, 3Tokuyama Corporation, Japan,
4
Tokyo University of Agriculture and Technology, Japan
10:05
We1-T09-2
Invited oral (25 min)Growth of AlN substrates by hydride vapor phase
epitaxy for opto-electronic devices.
T. Kinoshita1 *, T. Nagashima1, T. Obata1, R. Togashi2,
Y. Kumagai2, R. Schlesser3, R. Collazo4, A. Koukitu2, Z.
Sitar41Tokuyama Corporation, Japan, 2Tokyo University ofAgriculture and Technology, Japan, 3HexaTech, Inc.,
USA, 4North Carolina State University, USA
10:30
We1-T09-3
Oral (15 min)
Ab initio Calculations of Adsorption of Nitrogen andAluminum at AlN(0001) Surface
P. Strak*, P. Kempisty, K. Sakowski, S. Krukowski
Institute of High Pressure Physics, PAS, Poland
10:45
We1-T09-4
Oral (15 min)Polarity inversion at very initial stage of AlN
homoepitaxial growth by sublimation method
K. Shigetoh*, K. Horibuchi, D. Nakamura
Toyota Central R&D Labs., Japan
11:00
We1-T09-5
Oral (15 min)
Dislocation evolution and stress management in AlN
grown on patterned substrates
F. Mercier1,2 *, M. Chubarov1,2, J. Su3, E. Blanquet1,2, S.
Lay1,2, M. Pons1,2, R. Boichot1,2
1
SIMaP, University of Grenoble Alps, France, 2SIMaP,
CNRS, France, 3Xi’an Jiaotong University, China
11:15
We1-T09-6
Oral (15 min)Observation of AlGaN/GaN heterostructure by in situ
XRD attached metalorganic vapor phase epitaxial
equipment
J. Osumi1 *, R. Kanayama1, M. Iwaya1, T. Takeuchi1, S.
Kamiyama1, I. Akasaki2
1
Meijo Univ., Japan, 2Akasaki Research Center, Nagoya
Univ., Japan
11:30
We1-T09-7
Oral (15 min)Threading dislocations as leakage current paths

43

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
through AlGaN/GaN heterostructures
J. Friedrich1 *, S. Besendörfer2, E. Meissner1, A. Lesnik3,
L. Frey2
1Fraunhofer IISB, Germany, 2FAU Erlangen-Nürnberg,
Germany, 3Otto-von-Guericke-Universität Magdeburg,
Germany
Excursion
Wednesday afternoon, 10 August, 12:00
1. Ise Jingu,
2. Toyota Automobile Museum,
3. Atsuta Shrine & Nagoya Asahi Brewery Tour,
4. Port of Nagoya Public Aquarium & SCMAGLEVand Railway Park.

44

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Thursday, 11 August
Plenary 6
Thursday morning, 11 August, 8:30
Shirotori Hall
8:30
Plenary Lecture (40 min)A dynamic view of nanostructure growth
Frances M. Ross*
IBM T. J. Watson Research Center, USA
Coffee breakThursday morning, 11 August, 9:10
Event Hall, Shirotori Hall
Session Th1Thursday morning, 11 August, 9:40
G01, G03, G05, G06, G09, T01, T02, T03, T04, T06

Th1-G01
Fundamentals of Nucleation and Crystal Growth
Room: Oral 6
9:40
Th1-G01-1
Invited oral (25 min)
In Situ Observation of Ice Crystal Surfaces by
Advanced Optical Microscopy
G. Sazaki1 *, H. Asakawa1,2, K. Murata1, K. Nagashima1,
S. Nakatsubo1, Y. Furukawa1
1
Hokkaido University, Japan, 2Present Address: National
Institute of Technology, Anan College, Japan
10:05
Th1-G01-2
Oral (15 min)Direct observation of Surface Melting on Rough Ice
Crystal Surfaces
H. Asakawa1 *, G. Sazaki2, K. Murata2, K. Nagashima2,
S. Nakatsubo2, Y. Furukawa2
1
Yamaguchi University, Japan, 2Hokkaido University,
Japan
10:20
Th1-G01-3
Oral (15 min)A simple physical model of surface melting on ice
crystalsK. Murata1 *, H. Asakawa1,2, K. Nagashima1, Y.
Furukawa1, G. Sazaki1
1
Hokkaido University, Japan, 2Present Address: National
Institute of Technology, Anan College, Japan
10:35
Th1-G01-4
Oral (15 min)Ice growth and interface oscillation of water droplets
impinged on a cooling surface
Y. Hagiwara1 *, R. Kimura2, S. Ishikawa2, K.
Fukushima2
1
Faculty of Mech. Eng., 2Department of Mech. and
System Eng., Kyoto Institute of Technology, Japan
10:50
Th1-G01-5
Oral (15 min)In situ second-harmonic scattering: a new technique
to simultaneously probe symmetry and size during
crystal growth
S. Van Cleuvenbergen1 *, Z. J. Smith2, S.
Wachsmann-Hogiu3, T. Verbiest1, M. A. van der Veen4
1
KU Leuven, Belgium, 2University of Science andTechnology of China, China, 3UC Davis, USA, 4TU Delft,

the Netherlands
11:05
Th1-G01-6
Oral (15 min)Peculiar Growth Kinetic of ADP crystal at very small
supersaturations.
H. V. Alexandru*
University of Bucharest/Academy of Romanian Scientists,
Romania
11:20
Th1-G01-7
Oral (15 min)Surface Free Energy and Morphology of Negative
Crystal in Sapphire Single Crystal
T. Suzuki*, K. Shirotsuki, T. Taishi, and K. Hoshikawa
Shinshu University, Japan

Th1-G03
Nanomaterials and Low Dimensional Structures,
Nanostructure - Fundamentals and Applications
Room: Oral 2
9:40
Th1-G03-1
Invited oral (25 min)Modeling the kinetics and statistics of III-V nanowire
growthF. Glas*, G. Priante, F. Oehler, K. Pantzas, G. Patriarche,
J.-C. Harmand
CNRS, Université Paris Saclay, France
10:05
Th1-G03-2
Oral (15 min)Size and morphology controlled synthesis of silver
sulfide nanostructures by multi-solvent thermal
decomposition method
I. K. Mohamed Mathar Sahib1 *, D. Thangaraju2, Y.
Masuda1, W. Inami1, 2, Y Kawata1, 2, Y. Hayakawa1, 2
1
GSST, 2RIE, Shizuoka University, Japan
10:20
Th1-G03-3
Oral (15 min)Polymorphism and Ambient-condition Growth ofMetastable Single-crystalline KDP Microstructures
Y. Ren1 *, L. Deng2, C. Q. Zhang1, X. T. Tao1
1
Shandong University, China, 2National Institute ofStandards and Technology, USA
10:35
Th1-G03-4
Oral (15 min)
Dominant Role of Diffusion and Reaction on
Nucleation and Shape Development of Particles
Y.-S. Han, T. Yang, J.-M. Liu, W. Liu, J.-H. Li
Institute of Process Engineering, Chinese Academy of
Sciences, China
10:50
Th1-G03-5
Oral (15 min)
3D nanoscale energetic Metal-Organic Frameworks:
crystal structures, thermostability, insensitivity andhigh-energy performances
D. Chen*, D. Jing, X. He, Q. Zhang
Institute of Chemical Materials, China Academy ofEngineering Physics, China
11:05
Th1-G03-6
Oral (15 min)Comparitive study on Ga1-xZnxN1-xOx oxynitride
solid solution synthesized by different techniques andits application in photocatalytic hydrogen production
S. Sivadas Menon1 *, K. Baskar1, 2, S. Singh1
1
Anna University, India, 2Manonmaniam Sundaranar
University, India
11:20
Th1-G03-7
Oral (15 min)Formation and thermal conversion of
3Mg(OH)2·MgCl2·8H2O nanowires

45

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
L. Xiang*
Tsinghua University, China

Th1-G05
Organic and Biological Crystallization
Room: Oral 3
9:40
Th1-G05-1
Invited oral (25 min)
Nano Crystal Fishnets (Networks) Making Spider
Silk Fibers Tougher
X. Y. Liu*
National University of Singapore, Singapore/Xiamen
University, China
10:05
Th1-G05-2
Oral (15 min)
Nanocrystals of PbS, CdS, and HgS grown in four
species of Candida and its characterization
M. Cuéllar-Cruz1 *, A. Moreno2
1
Universidad de Guanajuato, México, 2Universidad
Nacional Autónoma de México, México
10:20
Th1-G05-3
Oral (15 min)Growth of acetaminophen form II by using
solvent-mediated phase transformation
Yo. Mori1 *, M. Maruyama1, Y. Takahashi1,2, H.
Yoshikawa1,3, S. Okada2, H. Adachi1,2, S. Sugiyama4, K.
Takano2,5, S. Murakami2,6, H. Matsumura2,7, T. Inoue1,2,
K. Tsukamoto1,8, M. Yoshimura1, Yu. Mori1,2
1
Graduate School of Engineering, Osaka University,
Japan, 2SOSHO Inc., Japan, 3Saitama University, Japan,
4
Graduate School of Science, Osaka University, Japan,
5
Kyoto Prefectural University, Japan, 6Tokyo Institute ofTechnology, Japan, 7Ritsumeikan University, Japan,
8
Tohoku University, Japan
10:35
Th1-G05-4
Oral (15 min)Polymorphism of PAHs by application of magnetic
fieldsJ. Potticary1,2 *, L. R.Terry1, C. Bell2, A. M.Collins1,2, C.
Fontanesi3,4, G. Kockiok-Köhn4, S. Crampin4, E. Da
Como4, S. R. Hall1
1
Univertisy of Bristol/Chemistry, UK, 2Univertisy ofBristol/Physics, UK, 3Universita’ di Modena e Reggio
Emilia, Italy, 4University of Bath/Physics, UK
10:50
Th1-G05-5
Oral (15 min)Spontaneous Formation of Eutectic Crystal
Structures in Binary and Ternary Charged Colloids
due to Depletion Attraction
A. Toyotama*, T.Okuzono, J. Yamanaka
Nagoya City Univ., Japan
11:05
Th1-G05-6
Oral (15 min)Controlled crystallization of colloidal particles due totuning of surface charge by adsorption of ionicsurfactant
J. Yamanaka*, A. Toyotama, T. Okuzono
Nagoya City Univ., Japan

Th1-G06
Bulk Crystal Growth
Room: Oral 10
9:40
Th1-G06-1
Invited oral (25 min)Growth of SrTiO3 bulk crystals by the EFG and
TSSG methods

C. Guguschev*, Z. Galazka, D. Kok, U. Juda, R. Uecker,
M. Bickermann
Leibniz Institute for Crystal Growth, Germany
10:05
Th1-G06-2
Oral (15 min)A further development of the CZ weighing control for
semiconductor and oxide crystals
P. V. Kasimkin1 *, V. A. Moskovskih1, Ya. V. Vasiliev2,
V. N. Shlegel2, V. N. Zhdankon3, O. I. Podkopaev4
1
Novosibirsk State Technical University, Russia,
2
Nikolaev Institute of Inorganic Chemistry SB RAS,
Russia, 3CML Ltd., Russia, 4OJSC Germanium, Russia
10:20
Th1-G06-3
Oral (15 min)Modeling convective effects on crystal-melt interface
shape in edge-defined film-fed growth of sapphirerods and ribbons
C. Stelian1,2 *, N. Barthalay2, T. Duffar1
1
SIMAP-EPM, France, 2Le Rubis SA, France
10:35
Th1-G06-4
Oral (15 min)Growth of β-Ga2O3 Single Crystal by EFG Method
Z.-T. Jia1,2 *, W.-X. Mu1, Y.-R. Yin1, X.-T. Tao1
1
Shandong University, China, 2Sun Yat-sen University,
China
10:50
Th1-G06-5
Oral (15 min)Investigation on primary phases in potassium
tantalate niobate (KTaxNb1-xO3: KTN) crystal growthin directional solidification
T. Taishi1 *, K. Ito1, K. Hosokawa1, K. Hoshikawa1, T.
Kojima2, T.i Komatsu3
1
Shinshu University, Japan, 2Oxide Corporation, Japan,
3
NTT Advanced Technology Corporation, Japan
11:05
Th1-G06-6
Oral (15 min)Crystal growth and properties of spinel Co2TiO4 by
the floating zone melting with light heating.
A. M. Balbashov1*, M. E. Voronchikhina1, A. A.
Mukhin2, V. Yu. Ivanov2, L. D. Iskhakova3
1
Moscow power Engineering Institute, 2Institute ofGeneral Physics of RAS, 3National center of fiber optics
of RAS, Russia

Th1-G09
In situ Observation and Characterization
Room: Oral 1
9:40
Th1-G09-1
Invited oral (25 min)
Structure of solid-liquid interfaces: GaN-Ga &mica-electrolyte
E. Vlieg1 *, A. E. F. de Jong1,2, S. Pintea1, W. de Poel1, V.
Honkimäki2, R. Felici2, V. Vonk3, M. Bockowski4, I.
Grzegory4
1
Radboud University, The Netherlands, 2ESRF, France,
3
DESY, Germany, 4Institute of High Pressure Physics,
PAS, Poland
10:05
Th1-G09-2
Invited oral (25 min)In situ diagnostics of melting/solidification andsegregation during crystal growth provided by energy
resolved neutron imaging
A. S. Tremsin1 *, D. Perrodin2, A. Losko3, S. Vogel3, M.
Bourke3, G. Bizarri2, E. Bourret2, J. J. Derby4
1
University of California at Berkeley, USA, 2Lawrence
Berkeley National Laboratory, USA, 3Los Alamos

46

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
National Laboratory, USA, 4University of Minnesota,
USA
10:30
Th1-G09-3
Oral (15 min)Microstructural investigations of SrTiO3 single
crystals and multicrystalline silicon using a powerful
new X-ray diffraction surface mapping technique
C. Guguschev1 *, R. Tagle2, U. Juda1, A. Kwasniewski1,
T. Ervik1, R. Uecker1, S. Kayser1, F. M. Kießling1, M.
Bickermann1
1
Leibniz Institute for Crystal Growth, Germany, 2Bruker
Nano GmbH, Germany
10:45
Th1-G09-4
Oral (15 min)Ultra High Speed In-Situ Characterisation of Defects
in Single Crystals
A. N. Danilewsky1 *, A. Rack2, M. Scheel3
1
Albert-Ludwigs-Universität, Germany, 2European
Synchrotron Radiation Facility, France, 3Synchrotron
Soleil, France
11:00
Th1-G09-5
Oral (15 min)Synchrotron X-ray diffraction imaging to study
dislocations in Ti doped sapphire crystal grown by
Kyropoulos method
G. Sen1 *, J. Baruchel2, T. N. Tran Caliste2, N.
Barthalay3, C. Pezzani3, T. Duffar1
1
SIMAP-EPM, France, 2ESRF, France, 3RSA le rubis SA,
France11:15
Th1-G09-6
Oral (15 min)
New Directions in In Situ X-Ray Studies of Vapor
Phase Crystal Growth
P. H. Fuoss1, G.-X. Ju1, M. J. Highland1, H. Zhou2, A.
Yanguas-Gil3, C. Thompson4 *, D.-W. Xu1, P. Zapol1, J.
A. Eastman1, G. Brian Stephenson1
1
Materials Science Division, 2X-Ray Science Division,
3
Energy Systems Division, Argonne National Laboratory,
USA, 4Northern Illinois University, USA
11:30
Th1-G09-7
Oral (15 min)Spin-Lattice Coupling and Phonon Softening in
BiFeO3 Crystal
C.-S. Tu1 *, C.-S. Chen2, P.-Y. Chen3
1
Fu Jen Catholic University, Taiwan, 2Hwa Hsia Univ. of
Tech., Taiwan, 3Ming Chi Univ. of Tech., Taiwan

Th1-T01
III-V Semiconductors
Room: Oral 99:40
Th1-T01-1
Oral (15 min)Analysis of complex dislocation in GaN layer grownon 4 inch Si(111) with AlGaN/AlN strained layer
superlattice after epitaxial growth
Y. Sugawara1, Y. Ishikawa1 *, A. Watanabe2, M.
Miyoshi2,3, T. Egawa2,3
1
Japan Fine Ceramics Center, Japan, 2Nagoya Instituteof Technology, Japan, 3Innovation center for
Multi-Business of Nitride Semiconductors, Japan
10:05
Th1-T01-2
Oral (15 min)Control of the growth plane of semipolar GaN on Si(001) by adjusting the direction of sputtered AlN
buffer layer
H. J. Lee1 *, S. Y. Bae1, K. Lekhal1, T. Suzuki1, M. Deki2,

Y. Honda2, H. Amano2,3
1
Department of Electrical Engineering and Computer
Science, 2Center for Integrated Research of FutureElectronics, 3Akasaki Research Center, Nagoya
University, Japan
10:20
Th1-T01-3
Oral (15 min)
Reduction of leakage current density inhomoepitaxial m-plane GaN by controlling V/III
ratios for high-power device applications
O. I Barry1 *, A. Tanaka1, K. Nagamatsu1, S.-Y. Bae1, K.
Lekhal1,2, M. Deki2, S. Nitta2, Y. Honda2, H. Amano2,3
1
Department of Electrical Engineering and Computer
Science, 2Institute of Materials and Systems for
Sustainability, 3Akasaki Research Center, Nagoya
University, Japan
10:35
Th1-T01-4
Oral (15 min)
Fabrication of crack-free freestanding GaN
substrates by dissolution of sapphire substrates using
Li afterthe Na-fluxgrowth
T. Yamada*, M. Imanishi, K. Nakamura, K. Murakami,
H. Imabayashi, D. Matsuo, M. Honjo, M. Maruyama, M.
Imade, M. Yoshimura, Y. Mori
Osaka University, Japan
10:50
Th1-T01-5
Oral (15 min)
Suppression of V-shape Valley Formation at the
Coalescence Boundary in 4-inch GaN Crystals Grown
from Multiple HVPE Wafers by the Na-flux Growth
M. Imanishi1 *, K. Murakami1, M. Honjo1, H.
Imabayashi1, D. Matsuo1, M. Maruyama1,
M. Imade1, M. Yoshimura1, T. Yoshida2, T. Kitamura2,
M. Shibata2, Y. Mori1
1
Osaka University, Japan, 2SCIOCS, Japan
11:05
Th1-T01-6
Oral (15 min)High Quality Bulk GaN Crystal Grown by Acidic
Ammonothermal Method
M. Saito1,2 *, Q. Bao1,3, K. Kurimoto1,3, D. Tomida1, K.
Kojima1, Y. Kagamitani2, R. Kayano3, T. Ishiguro1, S. F.
Chichibu1
1
IMRAM-Tohoku Univ., Japan, 2Mitsubishi Chemical
Corp., Japan, 3The Japan Steel Works, Japan
11:20
Th1-T01-7
Oral (15 min)Low resistiveGaInN tunneljunctionswith high Si
concentrations
Y. Akatsuka1 *, D. Takasuka1, M. Ino1, T. Akagi1, T.
Takeuchi1, M. Iwaya1, S. Kamiyama1,I. Akasaki1,2
1
Meijo Univ., Japan, 2Akasaki Research Center, Nagoya
Univ., Japan

Th1-T02
Group IV Semiconductors
Room: Oral 8
9:40
Th1-T02-1
Invited oral (25 min)Group-IV two-dimensional materials beyond
graphene
Y. Yamada-Takamura*
Japan Advanced Institute of Science and Technology(JAIST), Japan
10:05
Th1-T02-2
Invited oral (25 min)Reactive Gas Source Epitaxy of Group IV Alloys for

47

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Si based Photonics
D. Grützmacher1 *, N. von den Driesch1, S. Wirths1, D.
Stange1, S. Mantl1, D. M. Buca1, J. M. Hartmann2, R.
Geiger3, H. Sigg3, Z. Ikonic4
1
PGI-9 and Jülich Aachen Research Alliance on
Fundamentals of Future Information Technology(JARA-FIT), Germany, 2CEA, LETI, MINATEC Campus,
France, 3Paul Scherrer Institute, Switzerland,
4
University of Leeds, UK
10:30
Th1-T02-3
Oral (15 min)Growth and selective n-type doping of GeSi/Ge(001)structures
A. V. Novikov*, D. V. Yurasov, M. V. Shaleev, P. A.
Yunin, M. N. Drozdov
Institute for Physics of Microstructures RAS, Russia
10:45
Th1-T02-4
Oral (15 min)Role of H2 Supply for Sn Incorporations in MOCVD
Ge1-xSnx Epitaxial Growth
K. Suda1 *, N. Sawamoto1, H. Machida2, M. Ishikawa2,
H. Sudoh2, Y. Ohshita3, I. Hirosawa4, A. Ogura1
1
Meiji University, Japan, 2Gas-phase Growth Ltd., Japan,
3
Toyota Technological Institute, Japan, 4Japan
Synchrotron Radiation Research Institute, Japan
11:00
Th1-T02-5
Oral (15 min)
Fabrication of uniaxiallystrained Ge byselective
ionimplantation technique
S. Konoshima*, E. Yonekura, K. Sawano
Tokyo City University, Japan
11:15
Th1-T02-6
Oral (15 min)Study on ion implantation conditions in fabricating
compressively strained Si/relaxed Si1-xCx
heterostructures using the defect control by ion
implantation technique
Y.Arisawa1 *, K. Sawano2, N. Usami1
1
Nagoya University, Japan, 2Tokyo City University,
Japan
11:30
Th1-T02-7
Oral (15 min)Melt Growth of Thermoelectric Grade Mg2Si in
Atmosphere
H. Udono*, H. Okazaki
Ibaraki University, Japan

Th1-T03
2D Materials
Room: Oral 5
9:40
Th1-T03-1
Invited oral (25 min)Liquid -phase growth of high -quality graphene fromsilicon carbide on silicon through a catalytic alloy
F. Iacopi1 *, N. Mishra1, R. T. Jones2, P. J. Pigram2, A.
Tadich3, J. Boeckl4
1
Griffith University, Australia, 2La Trobe University,
Australia, 3Australian Synchrotron, Australia, 4Air Force
Research Laboratories, USA
10:05
Th1-T03-2
Invited oral (25 min)
Structural analysis of heterostructures of 2D
materials by low-energy electron microscopy anddiffraction
H. Hibino1,2 *1Kwansei Gakuin University, Japan, 2NTT Basic

Research Laboratories, NTT Corporation, Japan
10:30
Th1-T03-3
Oral (15 min)Epitaxial Growth of Graphene by Chemical Vapor
Deposition on Ir(111)/α-Al2O3(0001)
S. Koh*, Y. Saito, H. Kodama and A. Sawabe
Aoyama Gakuin University, Japan
10:45
Th1-T03-4
Oral (15 min)
Improvement of crystalline quality of directly grownmultilayer graphene by precipitation method using
crystallized Ni catalyst
J. Yamada1 *, Y. Ueda1, T. Maruyama2, S. Naritsuka1
1
Department of Materials Science and Engineering,2
Department of Applied Chemistry, Meijo University,
Japan
11:00
Th1-T03-5
Oral (15 min)Influence of growth temperature on nucleation
during non-catalytic CVD of graphene on sapphire
substrate
Y. Ueda1 *, J. Yamada1, T. Maruyama2, S. Naritsuka1
1
Department of Materials Science and Engineering,2
Department of Applied Chemistry, Meijo University,
Japan
11:15
Th1-T03-6
Oral (15 min)Anisotropic growth of graphene on cleaved
SiC(1-100) surfaces
T. Takasaki, A. Shioji, T. Kajiwara, A. Visikovskiy, and
S. Tanaka*
Kyushu University, Japan

Th1-T04
II-VI and Oxide Materials
Room: Oral 4
9:40
Th1-T04-1
Invited oral (25 min)Ferroelectric oxide energy technologies
B. Vilquin*
Université de Lyon, France
10:05
Th1-T04-2
Invited oral (25 min)Defect formation at solution crystal growth: newvisionA. E.Voloshin*, E. B.Rudneva, V. L.Manomenova
Shubnikov Institute of Crystallography of RAS, Russia
10:30
Th1-T04-3
Oral (15 min)
Properties of ε-Ga2O3 films grown by MOVPE
M. Pavesi1,2, F. Fabbri2,3, F. Boschi1,2, A. Baraldi1, C.
Ferrari2, E. Buffagni2, M. Bosi2, G. Piacentini1, E.
Gombia2, A. Parisini1,2, R. Fornari1,2 *1Parma University, Italy, 2IMEM-CNR Institute, Italy,
3
Key Enabling Technology Laboratory, Italy
10:45
Th1-T04-4
Oral (15 min)Observation of Etch Pits on the (010) Surface of
β-Ga2O3 Single Crystals
M. Kasu1 *, K. Hanada1, T. Moribayashi1, K. Koshi2, K.
Sasaki2, A. Kuramata2, O. Ueda3
1
Saga University, Japan, 2Tamura Corporation, Japan,
3
Kanazawa Institute of Technology, Japan
11:00
Th1-T04-5
Oral (15 min)Segregation of TiO2 during Y2Ti2O7 Crystal Growthby OFZ Method
C.Y. Liu1, 2 *, A. Dabkowski1, W.-Q. Jie2, 3, B. D.

48

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Gaulin1, 4, H. A. Dabkowska1
1
Brockhouse Institute for Materials Research, McMaster
University, Canada, 2School of Materials Science andEngineering, 3State Key Laboratory of Solidification
Processing, Northwestern Polytechnical University,
China, 4Department of Physics and Astronomy,
McMaster University, Canada
11:15
Th1-T04-6
Oral (15 min)Influence of growth rate at 1000oC on homoepitaxial
growth of β-Ga2O3 (001) by halide vapor phase
epitaxy
Y. Kozakai1 *, K. Nomura1, M. Takahashi1, K. Goto1, 2,
K. Sasaki2, 3, Q. T. Thieu1, R. Togashi1, H. Murakami1,
M. Higashiwaki3, A. Kuramata2, S. Yamakoshi2, B.
Monemar1,4, Y. Kumagai1
1Tokyo University of Agriculture and Technology, Japan,
2
Tamura Corporation, Sayama, Japan, 3National
Institute of Information and Communications Technology,
Japan, 4Linköping University, Sweden
11:30
Th1-T04-7
Oral (15 min)Investigation of Crystal Growth and Magnetic
Properties of Pr1-xLaxAlO3
C. Korosec1,2, A. Dabkowski1, M. Tachibana3, B.
Gaulin1,4, H. Dabkowska1 *1
Brockhouse Institute for Materials Research, McMaster
University, Canada, 2Simon Fraser University, Canada,
3
National Institute for Materials Science, Japan,
4
Department of Physics and Astronomy, McMaster
University, Canada

Th1-T06
Materials for Optical Devices
Room: Oral 7
9:40
Th1-T06-1
Invited oral (25 min)High quantum efficiency and thermal stability ofgreen-to-yellow single-crystal phosphors excited byhigh-brightness blue LEDs/LDs
E. G. Vίllora1 *, S. Arjoca1, D. Inomata2, K. Shimamura1
1
National Institute for Materials Science, Japan,
2
Tamura Corp., Japan
10:05
Th1-T06-2
Oral (15 min)
Flux growth at 1230°C of cubic Tb2O3 single crystals
and characterization of their optical and magnetic
properties
P. Veber1 *, M. Velázquez1, G. Gadret2, O. Plantevin3, D.
Rytz4, M. Peltz4
1
CNRS, Université de Bordeaux, France, 2LICB, UMR
6303 CNRS-Université de Bourgogne, France, 3CSNSM,
UMR 8609 CNRS-Université d’Orsay, France,
4
FEE-GmbH, Germany
10:20
Th1-T06-3
Oral (15 min)Scull melting growth of Tb-doped ZrO2 single
crystals for magneto-optical applications
V. Kochurikhin1,2 *, A. Yoshikawa1,3, Y. Furukawa4
1
C&A Corp., Japan, 2General Physics Institute, Russia,
3
IMR, Tohoku University, Japan, 4OXIDE Corp., Japan
10:35
Th1-T06-4
Oral (15 min)Crystal Growth of Zinc Tungstate Crystals for Dark
Matter Search

S. Kurosawa1 *, H. Sekiya2, R. Murakami3, T. Horiai3, Y.
Shoji3,4, Y. Ohashi3, Y. Yokota1, K. Kamada1,4, A.
Yoshikawa1, 3, 4
1
New Industry Creation Hatchery Center, Tohoku
University, Japan, 2The Univ. of Tokyo, Japan, 3Institutefor Materials Research, Tohoku University, Japan, 4C&A
Corp., Japan
10:50
Th1-T06-5
Oral (15 min)Site Preference of Ga3+ ions in Ce:Gd3Al5-xGaxO12
Scintillator Crystals Studied by Photoabsorption
Spectroscopy at Low Temperature
C. Oyama1, M. Kitaura1 *, M. Ishizaki1, K. Kamada2, S.
Kurosawa2, A. Ohnishi1, K. Hara3
1
Yamagata University, Japan, 2NICHe, Tohoku
University, Japan, 3Shizuoka University, Japan
11:05
Th1-T06-6
Oral (15 min)Luminescent properties of new hybrid materials
synthesised by high temperature heterophase reaction
M. Anurova, E. Ermolaeva, O. Petrova, I. Taydakov, A.
Khomyakov, A. Akkuzina, R. Avetisov, I. Avetissov*
D. Mendeleev University of Chemical Technology ofRussia, Russia
11:20
Th1-T06-7
Oral (15 min)Growth and optical properties of alkaline-earth
borates and silicates doped with divalent RE ionsM. Głowacki1 *, P. Solarz2, W. Ryba-Romanowski2, R.
Diduszko1,4, M.Berkowski1
1
Institute of Physics, PAS, Poland, 2Institute of Low
Temperature and Structure Research, PAS, Poland, 3Tele
and Radio Research Institute, Poland
Lunch
Thursday afternoon, 11 August, 11:35
Shirotori HallIOCG Council Meeting
Thursday afternoon, 11 August, 11:50
Bldg. 2 Exhibition Room 212
IOCG General AssemblyThursday afternoon, 11 August, 13:00
Shirotori Hall
Session Th2Thursday afternoon, 11 August, 14:10
G06, G09, G11, T02, T03, T04, T05, T06, T08, T10

Th2-G06
Bulk Crystal Growth
Room: Oral 10
14:10
Th2-G06-1
Invited oral (25 min)Basic Technology for High Quality Bulk Crystals by
the Liquinert process
S. Sakuragi*
Union Materials Inc. Japan
14:35
Th2-G06-2
Oral (15 min)High Composition Uniformity of 4” of PIN- PMN-PT
Single Crystals Grown by the Modified Bridgman
Method49

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Z.-R. Li*, K.-X. Song, H.-S. Guo, Y.-B. Liu, Z. Xu, S.
FanXi’an Jiaotong University, China
14:50
Th2-G06-3
Oral (15 min)Enhanced pyroelectric and electrocaloric propertiesof (Pb, La) (Zr, Sn, Ti)O3 antiferroelectric single
crystalF. P. Zhuo1 *, Q. Li1, J. H. Gao1, Y. J. Wang1, Q. F. Yan1,
Y. L. Zhang2, X. C. Chu2
1
Department of Chemistry, 2 State Key Laboratory of
New Ceramics and Fine Processing, Tsinghua University,
China
15:05
Th2-G06-4
Oral (15 min)Ferroelctric and domain characterization of
K0.5Bi4.5Ti4O15 crystal
H.-Y. Zhao1 *, K. Cai1, Z.-X. Cheng2, Z.-B. Ma1, H.
Kimura3, T.-T. Jia3
1
Wuhan Institute of Technology, China, 2University of
Wollongong, Australia, 3National Institute for Materials
Science, Japan
15:20
Th2-G06-5
Oral (15 min)Multiferroic properties of a series of the n=4
Aurivillius-phase single crystal: Bi5Ti3MO15 (M= Cu,
V, Ni, Mn)
H.-Y. Zhao1 *, Z.-D. Huang1, Z.-X. Cheng2, Z.-B. Ma1,
H. Kimura3
1
Wuhan Institute of Technology, China, 2University of
Wollongong, Australia, 3National Institute for Materials
Science, Japan
15:35
Th2-G06-6
Oral (15 min)Growth of Ca3Ta(Ga1-xAlx)3Si2O14 piezoelectric single
crystals and the piezoelectric properties
Y. Yokota1 *, T. Kudo2, Y. Shoji2,3, A. Medvedev2, Y.
Ohashi2, S. Kurosawa1, K. Kamada1,3, A. Yoshikawa1,2,3
1
New Industry Creation Hatchery Center (NICHe),
2
Institute for Materials Research, Tohoku University,
Sendai, Japan, 3C&A Corporation, Japan
15:50
Th2-G06-7
Oral (15 min) *Late News
Czochralski Growth and Distribution of SAW
Velocity of 2 inch Ca3Ta(Ga,Al)3Si2O14 Single
Crystals for Piezoelectric Application
A. Yoshikawa1,2,3,4 *, Y. Shoji1,3, Y. Ohashi1,4, Y.
Yokota2, K. Inoue4, V. I. Chani1, M. Arakawa1, K.
Kamada2,3,4, S. Kurosawa1,2, A. Medvedev1,4, V.
Kochurikhin3,4
1
Institute for Materials Research (IMR), 2New Industry
Creation Hatchery Center (NICHe), Tohoku University,
Japan, 3C&A Corporation, Japan, 4Piezo Studio Inc.,
Japan, 5General Physics Institute, Russian Academy of
Sciences, Russia

Th2-G09
In situ Observation and Characterization
Room: Oral 1
14:10
Th2-G09-1
Invited oral (25 min)
In Situ Study of Iron Oxide dendrite and
Iron-Platinum Nanostructure Growth using Liquid
Cell TEM
H.-M. Zheng1,2 *1Lawrence Berkeley National Laboratory, USA,
University of California, Berkeley, USA
14:35
Th2-G09-2
Invited oral (25 min)Calcite Dissolution Processes Visualized by
High-Speed Frequency Modulation Atomic ForceMicroscopy with True Atomic Resolution
T. Fukuma1,2 *, K. Miyata1,3, Y. Kawagoe1, K.
Miyazawa1, P. Spijker4, A. Foster4
1
Kanazawa University, Japan, 2ACT-C, Japan Scienceand Technology Agency, Japan, 3Japan Society for the
Promotion of Science, Japan, 4Aalto University, Finland
15:00
Th2-G09-3
Invited oral (25 min)
The mechanism of matrix protein assembly and its
role on mineral formation
J. Tao1 *, G. W. Buchko1, B. J. Tarasevich1, W. J. Shaw1,
P. Kelly2, J. Elliott2, J. Moradian-Oldak3, J. J. De Yoreo1
1
Pacific Northwest National Lab, USA, 2University ofCambridge, UK, 3University of Southern California, USA
15:25
Th2-G09-4
Oral (15 min)In-situ TEM Observation Reveals Early Stages of
Crystallization Governed by Singular Phenomena of
Nanoparticles
Y. Kimura*, T. Yamazaki
Hokkaido University, Japan
15:40
Th2-G09-5
Oral (15 min)Characterization of threading dislocations in GaN(0001) substrates by photoluminescence imaging,cathodoluminescence mapping and etch pits
Y. Yao1 *, Y. Ishikawa1,2, M. Sudo1,2, Y. Sugawara1, D.
Yokoe1
1
Japan Fine Ceramics Center, Japan, 2Nagoya Instituteof Technology, Japan
15:55
Th2-G09-6
Oral (15 min)InGaN surface roughness recovery by hydrogen
treatment as monitored by in situ laser scattering
T. Yamamoto1 *, A. Tamura1, K. Nagamatsu1, M. Deki2,
S. Nitta2, Y. Honda1,2, H. Amamo1,2,3
1
Department of Electrical Engineering and Computer
Science, 2Center for Integrated Research of FutureElectronics, 3Akasaki Research Center, Nagoya
University, Japan
2

Th2-G11
Industrial Crystallization
Room: Oral 2
14:10
Th2-G11-1
Invited oral (25 min)Co-doping effects in oxide and halide industrial
scintillation materials
V. Ouspenski1 *, S.Blahuta1, A. Benedetto1, P. R.
Menge2, K.Yang2, J.Buzniak2, J.Frank2
1
Saint-Gobain Recherche, France, 2Saint-Gobain
Crystals, USA
14:35
Th2-G11-2
Invited oral (25 min)
The Commercial Evolution of Bulk AlN
Single-Crystal Growth
R. T. Bondokov1 *, T. Suzuki1,2, S. P. Rao1, J. Chen1, L. J.
Schowalter1
1
Crystal IS, Inc., USA, 2Asahi Kasei Corp, Japan
15:00
Th2-G11-3
Oral (15 min)50

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Control of the crystallization rate and solid-melt
interface modification during alkali halide crystal
growth by VGF technique with a skull layer
V. Taranyuk*, A. Gektin, A. Kolesnikov
Institute for Scintillation Materials, NAS of Ukraine,
Ukraine
15:15
Th2-G11-4
Oral (15 min)Multiple Ribbons of Sapphire Crystals Grown by
EFG Method
J. Xu1 *, P. Luo1, H.-L. Tang1, Q.-G. Wang1,2, Y.-D. Jin3
1
Tongji University, China, 2Shanghai Guojing New
Material Technology Co., Ltd., China, 3Shanghai
Langzhao Mechanical and Electrical Equipment Co.,Ltd.,
China
15:30
Th2-G11-5
Oral (15 min)Effect of crucible and crystal rotations on theconvexity and the thermal stress in large size
sapphire crystal during Czochralski growth
T. Phu Nguyen1 *, Y.-T. Hsieh1, J.-C. Chen1, H. Bich
Nguyen21
National Central University, Taiwan, 2Nong Lam
University, Vietnam
15:45
Th2-G11-6
Oral (15 min)Growth of Variably Doped and Large Size RE:YAG
Laser Crystals Grown by Horizontal Direct
Crystallization Method
M. Arzakantsyan1 *, N. Ananyan1, V. Gevorgyan2, J.-C.
Chanteloup3
1”Laser techniques” CJSC, Armenia, 2Russian Armenian(Slavonic) University, Armenia, 3Laboratory LULI,
Ecole Polytechnique, CNRS, France
16:00
Th2-G11-7
Oral (15 min) *Late News
Melt Flow before Crystal Seeding in Cz Si Growthwith Transversal MF
S. E. Demina1, M. Iizuka2 *, Y. Mukaiyama2, V. V.
Kalaev1
1
STR Group Inc., Russia, 2STR Japan K.K., Japan
16:15
Th2-G11-8
Oral (15 min) *Late News
Using of Simplified Geometry of Cz Si Crystal
Growth Process with Transverse Magnetic Field for
Analysis of Numerical Parameters
S. Demina1, A. Smirnov1, V. Kalaev1 *, G. Ratnieks2, L.
Kadinski2
1
STR Group, Inc., Russia, 2Siltronic AG, Germany

Th2-T02
Group IV Semiconductors
Room: Oral 8
14:10
Th2-T02-1
Invited oral (25 min)
Challenges and solutions to grow Czochralski silicon
crystals for power electronic applications
Y. Nagai*, M. Higasa, S. Nakagawa, K. Kashima
GlobalWafers Japan Co., Ltd., Japan
14:35
Th2-T02-2
Oral (15 min)Possible reasons for dislocation formation in heavily
doped Czochralski grown Si
L. Stockmeier1 *, L. Lehmann2, C. Reimann1,3, J.
Friedrich1,31Fraunhofer THM, Germany, 2Siltronic AG, Germany,

3

Fraunhofer IISB, Germany
14:50
Th2-T02-3
Oral (15 min)Influence of Light Elements on Bulk Lifetime in CZ
Si crystals
Y. Miyamura*, H. Harada, S. Nakano, B. Gao, K.
Kakimoto
Kyushu University, Japan
15:05
Th2-T02-4
Oral (15 min)Effect of packing structure of Si chunks on melting
process and carbon contamination in Czochralski
silicon crystal growth
X. Liu*, B. Gao, S. Nakano, K. Kakimoto
Kyushu University, Japan
15:20
Th2-T02-5
Oral (15 min)Silicon single crystals grown by the Kyropoulos
methodG. Chichignoud1,2 *, A. Nouri1,2, Y. Delannoy1, F.
Richard3, M. Albaric4, V. Brize4, K. Zaïdat1
1
Univ. Grenoble Alpes, SIMAP, France, 2CNRS, SIMAP,
France, 3Cyberstar, France, 4CEA-INES, France
15:35
Th2-T02-6
Oral (15 min)New cold crucible for single crystal growth
K. Zaidat*, H. Abouchi, P. Petitpas, C. Garnier, G.
Chichignoud, R. Ernst
Univ. Grenoble Alpes, SIMAP, France/CNRS, SIMAP,
France
15:50
Th2-T02-7
Oral (15 min) *Late News
Thermophysical Properties of Supercooled-liquid
SiliconJ. T. Okada1 *, T. Ishikawa2, Y. Watanabe3, P. –F.
Paradis2, S. Uda1
1
Tohoku University, Japan, 2Institute of Space andAstronautical Science, Japan Aerospace Exploration
Agency, Japan, 3Advanced Engineering Services, Japan

Th2-T03
2D Materials
Room: Oral 5
14:10
Th2-T03-1
Invited oral (25 min)Synthesis and Applications of 2-Dimensional Layered
Materials
G. S. Duesberg1,2 *, N. Berner2, C. Cullen1,2, T. Hallam2,
M. O’Brien1,2, R. Gatensby1,2, N. McEvoy2
1
School of Chemistry, 2Centre for Adaptive
Nanostructures and Nanodevices (CRANN) & Advanced
Materials BioEngineering Research Centre(AMBER),
Trinity College Dublin, Ireland
14:35
Th2-T03-2
Invited oral (25 min)Novel Electronics Technology based on
Low-Symmetry Two-Dimensional Materials
H. Wang*
University of Southern California, Los Angeles, USA
15:00
Th2-T03-3
Oral (15 min)Chemical vapor deposition and photoresponse
measurement of WSe2 monolayer
W.-J. Su1 *, Y.-L. Wang2, W.-S. Gan1, Y.-S. Huang1,2,
K.-Y. Lee1,21
Graduate Institute of Electro-Optical Engineering,2
Department of Electronic and Computer Engineering,51

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
National Taiwan University of Science and Technology,
Taiwan15:15
Th2-T03-4
Oral (15 min)
Improvement of CVT growth of transition metal
dichalcogenides: the key role of chloride precursors
C. Barreteau *, A. Ubaldini, E. Giannini
University of Geneva, Switzerland
15:30
Th2-T03-5
Oral (15 min)
High-Pressure melt growth and Chemical Vapor
Transport growth of SiP, SiAs, GeP, and GeAs 2D
layered semiconductors
E. Giannini*, C. Barreteau, C. Besnard
University of Geneva, Switzerland

Th2-T04
II-VI and Oxide Materials
Room: Oral 4
14:10
Th2-T04-1
Invited oral (25 min)Growth of (Cd,Zn)Te crystals by Travelling Heater
Method THM under microgravity
M. Fiederle1 *, A. Fauler1, S. Schütt1, S. A. Senchenkov2,
A. S. Egorov2
1
Materials Research Center FMF, Germany, 2Researchand Development Institute for Launch Complexes NIISK,
Russia
14:35
Th2-T04-2
Oral (15 min)Analysis of the Accelerated Crucible Rotation
Technique for Vertical Bridgman Growth ofCadmium Zinc Telluride
M. S. Divecha1*, S. K. Swain2, K. G. Lynn2, J. J. Derby1
1
University of Minnesota, USA, 2Washington State
University, USA
14:50
Th2-T04-3
Oral (15 min)Controlling Growth Modes to Tailor-Make a Textureof Al- or Ga-Highly Doped ZnO Polycrystalline Films
J. Nomoto1 *, K. Inaba2, S. Kobayashi2, M. Osada1,3, H.
Makino1, T. Yamamoto1
1
Kochi University of Technology, Japan, 2Rigaku
Corporation, Japan, 3National Institute of Materials
Science, Japan
15:05
Th2-T04-4
Oral (15 min)Formation of transparent p-type conductive CuCrO2
film and analysis on source of degradation intransmittanceH. Chiba*, T. Kawashima, K. Washio
Tohoku University, Japan
15:20
Th2-T04-5
Oral (15 min)Crystal Growth of triangular-lattice antiferromagnet
Ba3CoSb2O9
D. Prabhakaran*, A. T. Boothroyd
University of Oxford, UK
15:35
Th2-T04-6
Oral (15 min)Comparison of THz response of ZnQTe (Q=V, Mn)bulk crystals grown by temperature gradient solvent
methodY. Xu1, 2 *, W. Bai1, L.-L. Ji1, L.-J. Guo1, B. Xiao, N.-B.
Jia1, C.-H. Zhang2, W.-Q. Jie1
1
Northwestern Polytechnical University, China, 2Nanjing
University, China

15:50
Th2-T04-7
Oral (15 min)Rate limitations for the growth of of cadmium zinctelluride (CZT) by the the traveling heater method(THM)
J. H. Peterson*, J. J. Derby
University of Minnesota, USA

Th2-T05
Materials for Spintronics
Room: Oral 6
14:10
Th2-T05-1
Invited oral (25 min)Ge-based spintronics with epitaxial Heusler alloys
K. Hamaya*
Osaka University, Japan
14:35
Th2-T05-2
Oral (15 min)
Ge/Fe3Si thin film stacks on GaAs(001) substrates: A
solid state epitaxy approach
J. Kalt, B. Jenichen, J. Herfort*
Paul-Drude-Institut für Festkörperelektronik, Germany
14:50
Th2-T05-3
Oral (15 min)
Magnetic Properties of Fe3Si Films on
Low-temperature-grown Germanium Layers
M. Ikawa*, S. Sakai, M. Kawano, S. Yamada, T.
Kanashima, K. Hamaya
Osaka University, Japan
15:05
Th2-T05-4
Oral (15 min)
The Relation between Crystal structure and Spin
Accumulation of the n-Ge/MgO/Co40Fe40B20
Spin-tunnel Contact
S. Lee1 *, S.-H. Kim2, J.-Y. Son1, J.-G. Cha1, J.-G. Hong1
1
Yonsei University, Korea, 2Kyoto University, Japan
15:20
Th2-T05-5
Invited oral (25 min)Highly efficient spin injection from a half-metallic
spin source of Co2MnSi and sensitive detection of
nuclear spin states
T. Uemura*
Hokkaido University, Japan
15:45
Th2-T05-6
Oral (15 min)
MBE synthesis of (In,Mn)As quantum dots using Mn
selective doping
A. Bouravleuv1-4 *, V. F.Sapega2, V. N. Nevedomskii2, L.
L. Lev5,6, C. Piamonteze5, T. Schmitt5, A. I. Khrebtov1,
Yu. B. Samsonenko1,3, J. Kanski7, G. E. Cirlin1-4, V. N.
Strocov5
1
St.Petersburg Academic University RAS, Russia, 2Ioffe
Physical Technical Institute RAS, Russia, 3Institute forAnalytical Instrumentation RAS, Russia, 4St.Petersburg
State University, Russia, 5Swiss Light Source, Paul
Scherrer Institute, Switzerland, 6National ResearchCentre “Kurchatov Institute”, Russia 7Chalmers
University of Technology, Sweden
16:00
Th2-T05-7
Oral (15 min)
Nanocomposite Based on ZnSiAs2+MnAs
I. V. Fedorchenko1,2, A. I. Ril1, O. Rabinovich1 *, S.
Legotin1, S. Didenko1, A. A. Krasnov1, Yu. Osipov1
1
NUST MISiS, Russia, 2Kurnakov Institute of Generaland Inorganic Chemistry, Russia

Th2-T06
52

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Materials for Optical Devices
Room: Oral 7
14:10
Th2-T06-1
Invited oral (25 min)Yb-doped crystalline hosts, laser architectures andcrystal geometries for high-power ultrashort-pulse
lasersX. Délen1 *, F. Lesparre1,2, J. T. Gomes1, I. Martial1,2, J.
Didierjean1,2, F. Druon1, F. Balembois1, P. Georges1
1
Institut d'Optique Graduate School, CNRS, Université
Paris‐Saclay, France, 2Fibercryst SAS, France
14:35
Th2-T06-2
Oral (15 min)Progress in the Research and Applications of
Self-frequency Doubling Crystals
J. Wang1 *, H.-H. Yu1, C.-Q. Ma2, H.-J. Zhang1
1
Shandong University, China, 2Lascence Company,
China
14:50
Th2-T06-3
Oral (15 min)Comparison between numerical modeling andexperimental measurements of the interface shapeand solute distribution in Kyropoulos growth of Ti
doped sapphire crystals
C. Stelian1,2 *, G. Sen1, N. Barthalay2, T. Duffar1
1
SIMAP-EPM, France, 2Le Rubis SA, France
15:05
Th2-T06-4
Oral (15 min)Growth and Characterization of Large Sized Ti:
sapphire Crystal
M. Xu*, L. H. Zhang, K. J. Ning, Y. X. Chu, X. Y. Liang,
R. X. Li, Y. Hang
Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, China
15:20
Th2-T06-5
Oral (15 min)
Yb:CaYAlO4 crystal for ultrafast laser pulses
X. Xu1 *, D. Li1, J. Ma2, J. Zhang1, D. Tang1, J. Xu3
1
Jiangsu Normal University, China, 2Nanyang
Technological University, Singapore, 3Tongji University,
China
15:35
Th2-T06-6
Oral (15 min)
Yb:Er-doped LiLa(WO4)2 single fiber crystal growth
R. L. Denaldi, L. Gomes, V. L. Mazzocchi, J. R. Moraes,
C. B. R. Parente, S. L. Baldochi*
Instituto de Pesquisas Energéticas e Nucleares, Brazil

Th2-T08
Materials for Organic Devices and Bio Applications
Room: Oral 3
14:10
Th2-T08-1
Invited oral (25 min)Surface-directed Molecular Assembly in Organic
Electronics
K.-W. Cho*
Pohang University of Science and Technology, Korea
14:35
Th2-T08-2
Invited oral (25 min)
Systematic comparative investigations on organic
single crystals
Y. Krupskaya1,2 *, A. Morpurgo1, B. Büchner2
1
IFW Dresden, Germany, 2DQMP, University of Geneva,
Switzerland
15:00
Th2-T08-3
Oral (15 min)Fluorination of Metal Phthalocyanines:
Single-Crystal Growth, Efficient N-Channel Organic

Field-Effect Transistors, and Structure-Property
Relationships
H. Jiang1 *, J. Ye2, P. Hu1, C. Kloc1
1
Nanyang Technological University, Singapore,
2
Institute of High Performance Computing, Singapore
15:15
Th2-T08-4
Oral (15 min)Heteroepitaxy of C60 on the Pentacene Single Crystal
SurfaceY. Mizuno2, T. Hosokai3, T. Koganezawa4, R. Tsuruta1,
A. Hinderhofer5, A. Gerlach5, K. Broch6, V.
Belova5, H. Frank5, M. Yamamoto2, H. Ishii2, F.
Schreiber5, N. Ueno2, Y. Nakayama1 *1Tokyo University of Science (TUS), Japan, 2Chiba
University, Japan, 3National Institute of Advanced
Industrial Science and Technology (AIST), Japan,
4Japan Synchrotron Radiation Research Institute(JASRI), Japan, 5Eberhard Karls Universität Tübingen,Germany, 6University of Cambridge, UK
15:30
Th2-T08-5
Oral (15 min)Anomalous Roughness Evolution of Organic Mixed
Films
A. Hinderhofer *, A. Gerlach, M. Oettel, F. Schreiber
University of Tuebingen, Germany
15:45
Th2-T08-6
Oral (15 min)Molecular Dynamics Simulation of Thin Film Growthof Organic Semiconductors
T. Shimada1 *, T. Tamura2, T. Nagahama1, T. Yanase1
1
Division of Applied Chemistry, 2Graduate School ofChemical Science and Engineering, Hokkaido University,
Japan
16:00
Th2-T08-7
Oral (15 min)Polymers growth for photovoltaic
D. Saranin, O. Rabinovich*, M. Orlova, S. Legotin, S.
Didenko, I. Fedorchenko and Yu. Osipov
NUST MISiS, Russia

Th2-T10
Silicon Carbide
Room: Oral 9
14:10
Th2-T10-1
Invited oral (25 min)Silicon Carbide Crystal and Epitaxial Growth andDislocation Behavior
J. J. Sumakeris1 *, J. Ambati1, A. A. Burk1, R. T.
Leonard1, E. Deyneka1, Y. Khlebnikov1, A. R. Powell1, J.
Seaman1, M. P. Paisley1, V. Tsvetkov1, J. Guo2, Y.
Yang2, M. Dudley2, E. Balkas1
1Cree Inc., USA, 2Stony Brook University, USA
14:35
Th2-T10-2
Invited oral (25 min)High temperature solution growth of SiC: An old,though still challenging topic
D. Chaussende*
CNRS, Univ. Grenoble Alpes, LMGP, France
15:00
Th2-T10-3
Oral (15 min)Surface morphology and growth stability of 4H-SiC
crystals in solution growth on (110m) surfaces
T. Mitani*, N. Komatsu, Y. Hayashi, T. Kato, H.
OkumuraNational Institute of Advanced Industrial Science andTechnology, Japan

53

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
15:15
Th2-T10-4
Oral (15 min)Threading Screw Dislocation Conversion by
Macrosteps during SiC Solution Growth for
High-quality Crystals
S. Harada1,2 *, K. Murayama1, S. Xiao2, F. Fujie2, T.
Sakai3, M. Tagawa1,2, T. Ujihara1,2
1
Institute of Materials and Systems for Sustainability(IMaSS), 2Department of Materials Science andEngineering, 3Green Mobility Collaborative ResearchCenter, Nagoya University, Japan
15:30
Th2-T10-5
Oral (15 min)Two-step growth of SiC solution growth for reductionof dislocations
K. Murayama1 *, T. Hori2, S. Harada1, S. Xiao2, M.
Tagawa1, T. Ujihara1
1
Institute of Materials and Systems for Sustainability(IMaSS), 2Department of Materials Science andEngineering, Nagoya University, Japan
15:45
Th2-T10-6
Oral (15 min)Polytype of p-type SiC crystals grown by the physicalvapor transport method with using aluminum andnitrogen co-doping
K.Eto1 *, H. Suo1,2, T. Kato1, H. Okumura1
1
National Institute of Advanced Industrial Science andTechnology (AIST), Japan, 2Showa Denko K. K, Japan
16:00
Th2-T10-7
Oral (15 min)Study of SiC carbonization on misoriented Si
substrates on research and production scale VPE
reactors
M. Bosi1 *, C. Ferrari1, D. Nilsson2, P. J. Ward2
1
IMEM-CNR, Italy, 2Anvil Semiconductors Ltd, UK

Poster 3
Thursday afternoon, 11 August, 16:10
Event Hall
G06, G09, G11, T02, T03, T04, T05, T08, T10

ThP-G06
Bulk Crystal Growth
16:10
ThP-G06-1
Poster (120 min)Growth and nonlinear optical properties of
GdAl3(BO3)4 in a flux without molybdate
Y.-C. Yue1 *, Y.-Y. Zhu1,2, Z.-G. Hu1
1
Technical Institute of Physics and Chemistry, Chinese
Academy of Sciences, China, 2Graduate School of theChinese Academy of Sciences, China
16:10
ThP-G06-2
Poster (120 min)
Free-standing HVPE-GaN crystals - slicing, wafering,and preparation of seeds
M. Fijalkowski1 *, M. Amilusik1,2, T. Sochacki1,2, B.
Lucznik1,2, M. Iwinska1, I. Grzegory1, M. Bockowski1
1
Institute of High Pressure Physics PAS, Poland,
2
TopGaN Sp z o.o., Poland
16:10
ThP-G06-3
Poster (120 min)Crystal Growth of LiFe5O8 with New Flux at Lower
Temperature
Y. Miyamoto1 *, Y. Kosaka1, B. Menaert2,3, A. Pena2,3, K.
Inoue1, J. Akimitsu1

1

Hiroshima University, Japan, 2University Grenoble
Alpes, France, 3CNRS, Instisut NEEL, France
16:10
ThP-G06-4
Poster (120 min)Crystal Growth and Optical Properties of Gd
Admixed Ce-doepd Lu2Si2O7 Single Crystals
T. Horiai1 *, S. Kurosawa2, R. Murakami1, A. Yamaji1, Y.
Shoji1,3, Y. Ohashi1, K. Kamada2,3, Y. Yokota2, A.
Yoshikawa1,2,3
1
Institute for Materials Research (IMR), 2New Industry
Creation Hatchery Center (NICHe), Tohoku University,
Japan, 3C&A Corporation, Japan
16:10
ThP-G06-5
Poster (120 min)Development of Large Size Direction Controlled
alpha-NiSO4. 6H2O Single Crystals and its Optical
Studies for UV Filters
P. Rajesh*, P. Ramasamy
SSN College of Engineering, India
16:10
ThP-G06-6
Poster (120 min)Luminescence and scintillation properties of Tl-doped
CsCl crystals
T. Sakai1 *, Y. Fujimoto1, T. Yanagida2, M. Koshimizu1,
K. Asai1
1
Tohoku University, Japan, 2NAIST, Japan
16:10
ThP-G06-7
Poster (120 min)Growth and characterizations of Tm3+: CNGS single
crystals
S/-Y. Guo*, J.-Y. Ren, X.-Z. Zhang, J.-L. He, X.-F.
Cheng, J.-Y. Guo, R. Cheng, X. Zhao
Shandong University, China
16:10
ThP-G06-8
Poster (120 min)Downconversion of UV into IR Emission in Yb Doped
Scheelite-Like Molybdate Single Crystals
K. A.Subbotin, D. A.Lis*, Ju.N.Osipova, D. A. Nikolaev,
V. A. Smirnov, E. V. Zharikov, I. A. Shcherbakov
A. M. Prokhorov General Physics Institute RAS, Russia
16:10
ThP-G06-9
Poster (120 min)
X-ray topographic studies of KDP crystals grownunder extremely high supersaturation
A. E. Voloshin, S. S. Baskakova, E. B. Rudneva*
Shubnikov Institute of Crystallography RAS, Russia
16:10
ThP-G06-10 Poster (120 min)Scintillation properties of Ce-doped Cs2HfCl6
K. Saeki1 *, Y. Fujimoto1, M. Koshimizu1, T. Yanagida2,
K. Asai1
1
Tohoku University, Japan, 2Nara Institute of Scienceand Technology, Japan
16:10
ThP-G06-11 Poster (120 min)Colony structure formation mechanism in Ce-doped
Al2O3/YAG eutectic systems grown by vertical
Bridgman technique
S. Yamada1, M. Yoshimura1,2, S. Sakata2, T. Taishi1,
K. Hoshikawa1
1
Shinshu University, Japan, 2Ube Industries Ltd., Japan
16:10
ThP-G06-12 Poster (120 min)Compositional variations in optical characteristics of
Mn doped spinel crystals
T. Katsumata1 *, H. Mitomi1, H. Nagayama1, Y. Orihara1,
M. Aoki1, A. Yoshida1, K. Shiratake1, S. Minowa2, T.
Sakuma2, H. Aizawa1, S. Komuro1

54

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
1

Faculty of Science and Engineering, 2Gradutaed Schoolof Engineering, Toyo University, Japan
16:10
ThP-G06-13 Poster (120 min)Single Crystal Growth and Electrical Properties of
Cu2TlX2 (X=Se, Te)
Y.-Y. Lv1 *, B.-B. Zhang1, S. H. Yao1, Y. B. Chen2, J.
Zhou1, Y. F. Chen1
1
National Laboratory of Solid State Microstructures andDepartment of Materials Science and Engineering,
Nanjing University, 2National Laboratory of Solid State
Microstructure and Department of Physics, Nanjing
University, China.
16:10
ThP-G06-14 Poster (120 min)The growth of α-NiSO4∙6H2O andK2CoxNi1-x(SO4)2∙6H2O crystals by the temperature
difference method
V. L. Manomenova1 *, V. M. Masalov2, E. B. Rudneva1,
A. E. Voloshin1, A. A. Zhokhov2, G. A. Emelchenko2
1
Shubnikov Institute of Crystallography, Russian
Academy of Sciences, Russia, 2Institute of Solid State
Physics, Russian Academy of Sciences, Russia
16:10
ThP-G06-15 Poster (120 min)Single Crystal Growth and Properties of Spin
Ladders: a new class of low- Dimensional Quantum
Magnets
R. Bag*, K. Karmakar, S. Singh
Indian Institute of Science Education and Research,
India.
16:10
ThP-G06-16 Poster (120 min)Synthesis and Characterization of High Temperature
Piezoelectric Single Crystal
C. Ji1,2 *, L. Shen1,2, N. Bao1,2,3
1
Nanjing Tech University, China, 2State Key Laboratoryof Materials-Oriented Chemical Engineering, China,
3
Jiangnan Graphene Institute, China
16:10
ThP-G06-17 Poster (120 min)Growth and Scintillation Properties of Perovskite
CsPbBr3 Crystals
J. Xu1 *, Q. Cui1, H. Shen1, H. Kimura2, H. Zeng1,3, M.
Jin4
1
Shanghai Institute of Technology, China, 2National
Institute for Materials Science, Japan, 3Nanjing
University of Science and Technology, China, 4Ningbo
Institute of Materials Technology and Engineering,
Chinese Academy of Sciences, China
16:10
ThP-G06-18 Poster (120 min)S and Te substitution effects on the single crystal
growth and superconducting properties of iron-based
superconductor FeSe
Y. Hara*, T. Sugaya, T.Isomae, C. Y. Lik, H. Kobayashi,
K. SatoNational Institute of Technology, Ibaraki College, Japan
16:10
ThP-G06-19 Poster (120 min)Growth and characterization of terbium fluoride
crystals
D. N. Karimov1 *, D. S. Lisovenko2, N. L. Sizova1
1
Shubnikov Institute of Crystallography of the Russian
Academy of Sciences, Russia, 2Institute for Problems in
Mechanics of the Russian Academy of Sciences, Russia

16:10
ThP-G06-20 Poster (120 min)Crystal Growth of Heavily Doped Nd:YAG by
Czochralski Method
T.-Y. Jiang1,2, C.-A. Li1,2 *, C.-K. Lee3, M. M. C. Chou1,2
1Department of Materials and Opto-electronic Science,
National Sun Yat-sen University, Taiwan, 2Taiwan
Consortium of Emergent Crystalline Materials, Ministryof Science and Technology, Taiwan, 3Department of
Photonics, National Sun Yat-sen University, Taiwan
16:10
ThP-G06-21 Poster (120 min)Preparation and laser modulation investigation ofquadratic electro-optical crystal Cu:KTN withgradient refractivity effect
X.-P. Wang*, B. Liu, Y.-G. Yang, Y.-Y. Zhang, X.-S.
Lv, L. Wei, J. Wang
Shandong Academy of Sciences, China
16:10
ThP-G06-22 Poster (120 min)
Air-processed NdBCO Single Domain Bulk with HighSuperconducting Properties
G. H. Du*, Y. F. Zhuang, L. T. Ma, X. Yao
Shanghai Jiao Tong University, China
16:10
ThP-G06-23 Poster (120 min)Growth of GaN layers using Ga2O vapor synthesizedfrom Ga and H2O
Y. Yamaguchi1 *, Y. Taniyama1, A. Kitamoto1, M.
Imade1, M. Yoshimura1, M. Isemura2, Y. Mori1
1
OsakaUniversity, Japan, 2Itochu Plastics Inc., Japan
16:10
ThP-G06-24 Poster (120 min)Effect of deuterium content on the property of DKDP
crystals
M.-X. Xu1,2 *, L. Zhang1,2, F. Liu1,2, S.-Y. Wang1,2, Y.-F.
Lian1,2, F. Wang3, Z.-P. Wang1,2, X.-G. Xu1,2, X. Sun1,2
1State Key Laboratory of Crystal Materials, 2Key
Laboratory of Functional Crystal Materials and Device,
Shandong University, Ministry of Education, China,
3
Research Center of Laser Fusion, China Academy ofEngineering Physics, China
16:10
ThP-G06-25 Poster (120 min)Slip dislocation crowd to be generated during pullingstop for a long time on CZ Si crystal growth
T. Abe1 *, T. Takahasi1, K. Shirai2
1
Shin-Etsu Handotai, Japan, 2ISIR, Osaka University,
Japan
16:10
ThP-G06-26 Poster (120 min)The Single Crystal Growth of LiInSe2 and Its
Properties for Neutron Detector Application
L.Guo*, Y. Xu, W. Jie, B.Xiao
Northwestern Polytechnical University, China
16:10
ThP-G06-27 Poster (120 min)Growth and characterization of cyclohexylaminium
phthalate hemihydrate single crystal
R. Gomathi*, S. Madeswaran, D. Rajan Babu
VIT University, India.
16:10
ThP-G06-28 Poster (120 min)
Structural and theoretical investigation on
N’-[(E)-(4-Bromophenyl)(phenyl)methylidene]-4-met
hylbenzenesulfonohydrazide crystal prepared by slow
evaporation method.
S. Rafi Ahamed1, J. Balaji2, P. Srinivasan2 *, Q. Ching

55

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Kheng3
1
Krishnasamy College of Engineering and Technology,
India, 2University College of Engineering (A Constituent
College of Anna University), India, 3Universiti Sains
Malaysia, Malaysia
16:10
ThP-G06-29 Poster (120 min)Growth and Characterization of Re:LaF3 Single
CrystalJ. Q. Hong*, L. H. Zhang, M. Xu, Z. Chen, P. X. Zhang,
Y. HangShanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, China
16:10
ThP-G06-30 Poster (120 min)Growth and Characterization of CLBO crystal
C.-X. Huang, J.-R. Chen*, S.-F. Zhang
Beijing Sinoma Synthetic Crystals Co. Ltd., China
16:10
ThP-G06-31 Poster (120 min)Growth, nonlinearoptical and thermal properties of
NaSr3Be3B3O9F4 crystal
Z. Fang1,2 *, L.-J. Liu1, Z.-Y. Hou1,2, K. Li1, X,-Y. Wang1,
C.-T. Chen1
1
Technical Institute of Physics and Chemistry, Chinese
Academy of Science, China, 2University of Chinese
Academy of Science, China
16:10
ThP-G06-32 Poster (120 min)Crystal growth and thermal properties ofluminescence from rare-earth doped YAG crystals
H. Aizawa1 *, Y. Kiyokawa2, T. Katsumata1, S. Komuro1
1
Faculty of Science and Engineering, 2Graduated Schoolof Engineering, Toyo University, Japan
16:10
ThP-G06-33 Poster (120 min)Deep Ultraviolet nonlinear optical crystal:
NaBe2BO3F2
S. Guo1,2 *, L.-J. Liu1, X.-Y. Wang1, Q. Huang1,2, Z.-Y.
Hou1,2, C.-T. Chen1
1
Technical Institute of Physics and Chemistry, Chinese
Academy of Science, China, 2University of Chinese
Academy of Sciences (UCAS), China
16:10
ThP-G06-34 Poster (120 min)Eliminating of In inclusions in InP single crystals by
the temperature gradient zone melting
N.-F. Sun1 *, S.-J. Wang1, Y.-K Han2, X.-L. Li1, H.-M.
Shao1, Y.-L. Shi1, Y. Wang1, L.-J. Fu1, R.-X. Yang2,
H.-S. Liu1, T.-N. Sun1
1
Hebei Semiconductor Research Institute, China, 2Hebei
University of Technology, China
16:10
ThP-G06-35 Poster (120 min)Effects of Al additives on GaN crystal growth by the
Na Flux Method
H. Imabayashi, K. Murakami, H. Takazawa, M. Honjo,
M. Imanishi, M. Maruyama, M. Imade, M. Yoshimura,Y. Mori
Osaka University, Japan
16:10
ThP-G06-36 Poster (120 min)
The formation mechanismof β-NaLuF4 microcrystals
H. Lin*, D. Y. He, Y. L. Zhang
Sun Yat-Sen University, China.
16:10
ThP-G06-37 Poster (120 min)Large Sized Crystal Growth and Piezoelectric

Properties of Na2TeW2O9
X. X. Tian*, Z. L. Gao, Y. X. Sun, X. T. Tao
Shandong University, China
16:10
ThP-G06-38 Poster (120 min)Crystal growth and laser performances of
M3Re2(BO3)4 (M=Ca, Sr; Re=Y, La, Gd) disordered
crystals
Z.-B. Pan1 *, H.-Q. Cai1, J. Ma2, H.-H. Yu3, H.-J. Zhang3,
J. Wang3
1
Institute of Chemical Materials and Advanced Materials
Center, China Academy of Engineering Physics, China,
2
Nanyang Technological University, Singapore,3
Shandong University, China
16:10
ThP-G06-39 Poster (120 min)
Design and Numerical Optimization for Argon Guide
System in Multicrystalline Silicon Furnace
W.-J. Su1 *, S.-S. Chen1, J.-G. Lu2, R. Zuo1
1
Jiangsu University, China, 2Zhenjiang Huantai Silicon
Science Technology Co. Ltd., China
16:10
ThP-G06-40 Poster (120 min)
The effects of Mg amount on the microstructuralproperties of Al–Si alloys
Z. Sersour1, L. Amirouche2 *1
UR- MPE Unit , UMBB, Algeria, 2Physics Faculty,
USTHB, Algeria
16:10
ThP-G06-41 Poster (120 min)Crystal Growth of Europium doped Lithium
Strontium Iodide (LiSrI3:Eu) Scintillating Radiation
Detector
S. Uba1 *, E. Rowe2, S. Babalola1, P. Bhattacharya2
1
Alabama A&M University, USA, 2Fisk University, USA
16:10
ThP-G06-42 Poster (120 min)*Late
News
Synthesis, Crystal structure, bulk crystal growth andcharacterization of a new aquadiiodo(3-aminopropanoic acid) cadmium (II) (3-APACd)
K. Boopathi1, P. Ramasamy2, S. Moorthy Babu1 *1Anna University, India, 2SSN College of Engineering,
India
16:10
ThP-G06-43 Poster (120 min)*Late
News
Growth of platinum fiber using the
micro-pulling-down method
T. Nihei1 *, Y.Yokota2, M. Arakawa2, Y. Ohashi1, S.
Kurosawa2, K. Kamada2,3, A. Yoshikawa1,2,3
1
Institute for Materials Research, 2New Industry
Creation Hatchery Center (NICHe), Tohoku University,
Japan, 3C&A Corporation, Japan
16:10
ThP-G06-44 Poster (120 min)*Late
News
Growth and Characterization of Ce:Gd3(Al, Ga)5O12
single crystals with various Ga-Al ratio
H. Sato1 *, T. Endo1, Y.Usuki1, T. Matsueda1, K.
Kamada2, M. Yoshino3, A. Yoshikawa2,3
1
Furukawa Co., Ltd., Japan, 2New Industry Creation
Hatchery Center (NICHe), 3Institute for Materials
Research (IMR), Tohoku University, Japan
16:10
ThP-G06-45 Poster (120 min)*Late
News

56

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Non-proportionality in the scintillation response oflight yield and energy resolution with derivation of
Mg co-doped Ce:Gd3(Al,Ga)O12 single crystals
M. Yoshino1,2 *, K. Kamada1,2, Y. Shoji2,3, A. Yamaji3, S.
Kurosawa1,3, Y. Yokota1, Y. Ohashi3, A. Yoshikawa1,2,3
1
New Industry Creation Hatchery Center, Tohoku
University, Japan, 2C&A Corporation, Japan, 3Institutefor Material Research Tohoku University, Japan

ThP-G09
In situ Observation and Characterization
16:10
ThP-G09-1
Poster (120 min)Growth morphologies of Fe nanoparticles in liquid of
the copper alloy
Y.-H. Zheng*
Wuxi Open University, China
16:10
ThP-G09-2
Poster (120 min)Impact of PIN and PZ end-members on Binary
system PMN -PT Single Crystals near theMorphotropic Phase Boundary
W.-H. He*, Q. Li, T. Jiang, N.-N. Luo, Q.-F. Yan
Tsinghua University, China
16:10
ThP-G09-4
Poster (120 min)
In-Situ X-ray Characterization of the Initial
Nucleation of AlN on Sapphire (0001) during
Reactive Sputtering
G.-X. Ju1, M. J. Highland1, J. A. Eastman1, R.
Sichel-Tissot1, P. M. Baldo1, P. Zapol1, C. Thompson2 *,P. H. Fuoss1
1
Argonne National Laboratory, USA, 2Northern Illinois
University, USA
16:10
ThP-G09-5
Poster (120 min)In-situ IR measurement of homogeneous nucleationof alumina from supersaturated vapor on ground andunder μG
S. Ishizuka1 *, Y. Kimura1, T. Yamazaki1, I. Sakon2, Y.
Inatomi3
1
Hokkaido University, Japan, 2University of Tokyo,
Japan, 3Japan Aerospace and Exploration Agency, Japan
16:10
ThP-G09-6
Poster (120 min)
The in situ observation of the peritectic solidification
in a Sr(NO3)2 - H2O system
K. Maiwa*, H. Nakamura, H. Kimura
National Institute for Materials Science, Japan
16:10
ThP-G09-7
Poster (120 min)A new set-up of Mössbauer Spectroscopic Microscope
to study the correlation between Fe impurities andlattice defects in Si crystals
Y. Ino1 *, K. Hayakawa1, K. Yukihira1, K. Matsumuro1,
H. Fujita1, T. Watanabe1, K. Ogai2, K. Moriguchi2, Y.
Harada2, H. Soejima1, Y. Yoshida1
1
Shizuoka Institute of Science and Technology, Japan,
2
APCO. Ltd., Japan
16:10
ThP-G09-8
Poster (120 min)A New Li-Ge-O Type Material Synthesized by
High-Pressure Method
Y. Shimonishi1 *, Y. Satou1, N. Yamamoto1, S. Komine1,
D. Mori2, Y. Inaguma2
1
DENSO CORPORATION, Japan, 2Gakushuin

University, Japan
16:10
ThP-G09-9
Poster (120 min)Nucleation Control and Separation of α and β
Polymorphs of L-glutamic Acid by Swift Cooling
Crystallization Process
N. Poongodi1 *, J. Aarthi1, P. Dhanasekaran1, K.
Srinivasan2
1
Erode Sengunthar Engineering College, India,
2
Bharathiar University, India.
16:10
ThP-G09-10 Poster (120 min)Effect of L-tyrosine on the Nucleation Control andSeparation of α and β Polymorphs of L-glutamic Acid
by Swift Cooling Crystallization Process
J. Aarthi1 *, N. Poongodi1 P. Dhanasekaran1, K.
Srinivasan2
1
Erode Sengunthar Engineering College, India,
2
Bharathiar University, Coimbatore, ndia
16:10
ThP-G09-11 Poster (120 min)
100 nm 3D Laue Diffraction Technique for
Ultra-High Spatial and Strain Resolution Combinedwith Versatile Analytical Probes for Materials
ScienceJ. C.-S. Ku*
National Synchrotron Radiation Research Center,
Taiwan
16:10
ThP-G09-12 Poster (120 min)
In-Situ Observation of the Structural Evolution
During the Anodic Oxidation of Silicon
W. Voegeli1 *, E. Arakawa1, T. Shirasawa2,3, T.
Matsushita4
1
Tokyo Gakugei University, Japan, 2University of Tokyo,
Japan, 3JST, PRESTO, Japan, 4Institute of Materials
Structure Science, KEK, Japan
16:10
ThP-G09-13 Poster (120 min)RHEED and HRTEM Study of Interface Layers in
PbTe(Ga)/BaF2/CaF2/Si Heterostructures Preparedby MBE TechniqueA. M. Samoylov1 *, E. K. Belonogov1, V. M. Iyevlev2, A.
E. Klimov3, V. N. Shumsky3
1
Voronezh State University, Russia, 2Moscow State
University, Russia, 3Institute of Physics of
Semiconductors, Russia

ThP-G11
Industrial Crystallization
16:10
ThP-G11-1
Poster (120 min)Correlation between Thermal Gradients’ Field andStructure Formation in Steel Static and ContinuouslyCast Brass Ingot
W. Wołczyński1 *, B. Kania1, A. W. Bydałek2, P.
Kwapisiński3, A. A. Ivanova4
1
Institute of Metallurgy and Materials Science, Poland,
2
AGH University of Science and Technology, Poland,
3
KGHM Polish Copper, Poland, 4Institute of Applied
Mathematics and Mechanics, Ukraine
16:10
ThP-G11-2
Poster (120 min)High Quality LBO Crystals Grown by TSSG Method
V. A. Sukharev1, A. P. Sadovskiy1 *, M. N.
Artyushenko1, I. S. Zhurkova1, D. D. Perlov2, A. V.

57

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Novoselov2
1
NTO IRE-Polus, Russia, 2IPG-Photonics, USA
16:10
ThP-G11-3
Poster (120 min)Growth and Laser Properties of
Self-frequency-doubled Yb:Ca4YO(BO3)3 crystal
Q.-N. Fang*, D. Lu, H.-H. Yu, H.-J. Zhang, J. Wang
Shandong University, China
16:10
ThP-G11-4
Poster (120 min)Investigating the moisture-induced transformation
kinetics of 7-ethyl-10-hydroxy camptothecin DMF
solvate into monohydrate
L. Fang, L. Wang*, Z.-X. Wu, X.-T. Tao
Shandong University, China
16:10
ThP-G11-5
Poster (120 min)Effect on Operating Parameters towards Metastable
Zone Width of Carbamazepine-Saccharin Co-crystal
E. N. Engku Mat Nasir1 *, F. Ab Rahman1, S. Abd
Rahim1, R. Z. Edros2, N. Anuar3
1
Faculty of Chemical & Natural Resources Engineering,2
Faculty of Engineering Technology, Universiti Malaysia
Pahang, Malaysia, 3Universiti Teknologi MARA,
Malaysia
16:10
ThP-G11-6
Poster (120 min)Application of the “Liquinert” Process to VB Growthof SrI2 (Eu) Single Crystals
S. Sakuragi*, S. Hashimoto
Union Materials Inc. Japan
16:10
ThP-G11-7
Poster (120 min)Acceleration growth mechanism of Rauenthalite
crystals (Ca3(AsO4)210H2O) from aqueous solution
R. Komatsu1 *, M. Miyazaki1, K. Mitsui1, N. Mizukoshi2,
A. Sakuma2, Y. Ohtani2
1
Yamaguchi University, Japan, 2GODO SHIGENSANGYO CO., LTD., Japan
16:10
ThP-G11-8
Poster (120 min)Influence of Diamond Multi-wire Slicing Material
Removal Rate on SiC wafer Warp
X. Wei*, W. Yingmin, H. Chao
China Electronics Technology Group Corporation,
China
16:10
ThP-G11-9
Poster (120 min)
The effect of ultrasound variables on the
crystallization of α- Lactose monohydrate (α-LM)
single crystals in aqueous solution
K.Vinodhini, K. Srinivasan*
Bharathiar University, India
16:10
ThP-G11-10 Poster (120 min)Investigation of the growth parameters for SrI2:Eu2+
crystal growth by VGF method
V. Taranyuk*, A. Gektin, E. Galenin, O. Sidletskiy, N.
Nazarenko, A. Kolesnikov, S. Vasyukov
Institute for Scintillation Materials, Ukraine
16:10
ThP-G11-11 Poster (120 min)Working point of the EFG and μ-PD processes
L. Carroz1, 2 *, K. Lebboud3, T. Duffar4
1
SNECMA Villaroche, France, 2RSA, France, 3ILM Bat
Kastler, France, 4SIMaP-EPM, France
16:10
ThP-G11-12 Poster (120 min)Dissolving and Melting Phenomena of Inorganic andOrganic Crystals by Addition of Third or Second
Components
K. Funakoshi *, R. Negishi, H. Nakagawa, R. Kawasaki
National Institute of Technology, Suzuka Collage (NIT,
Suzuka Collage), Japan

ThP-T02
Group IV Semiconductors
16:10
ThP-T02-1
Poster (120 min)Highly (111)-oriented Ge on insulators formed by
Al-induced crystallization leading to verticallyaligned Ge nanowires
M. Nakata1 *, K. Toko1, W. Jevasuwan2, N. Fukata2, T.
Suemasu1
1
University of Tsukuba, Japan, 2National Institute forMaterials Science, Japan
16:10
ThP-T02-2
Poster (120 min)
Homogeneous bulk SiGe crystals grown on board theInternational Space Station
Y. Arai1 *, K. Kinoshita1, T. Tsukada2, K. Abe2, S.
Sumioka2, M. Kubo2, S. Baba2, T. Maeda3, Y. Inatomi1
1Japan Aerospace Exploration Agency (JAXA), Japan,
2
Tohoku University, Japan, 3National Institute ofAdvanced Industrial Science and Technology (AIST),
Japan
16:10
ThP-T02-3
Poster (120 min)PECVD nanocomposites and nanotubes growth
D. Muratov, O. Rabinovich*, S. Legotin, S. Didenko, I.
Fedorchenko, Yu. Osipov
NUST MISiS, Russia
16:10
ThP-T02-4
Poster (120 min)Towards optimized nucleation control in
multicrystalline silicon ingot for solar cells
G. Anandha babu1,2 *, I. Takahashi1, T. Muramatsu1, N.
Usami1
1
Nagoya University, Japan, 2SSN College of Engineering,
India
16:10
ThP-T02-5
Poster (120 min)Dependence of Grain Boundary Structure Controlled
by Artificially Designed Seeds on Dislocation
Generation
T. Iwata*, I. Takahashi, N. Usami
Nagoya University, Japan
16:10
ThP-T02-6
Poster (120 min)Growth of Si crystals from the crucible repelling Si
melt by directional solidification
R. Komatsu1 *, T. Okubo1, C. Mizuno1, Y. Fujii1, I.
Takahashi2, N. Usami2
1
Yamaguchi University, Japan, 2Nagoya University,
Japan
16:10
ThP-T02-7
Poster (120 min)Ultra high TCR Germanium films prepared by DC
magnetron sputtering
L. P. Peng*, Z. G. Li, Z. Q. Zhan, L. Fan, X. M. Wang, T.
Jiang, W. D. Wu
Research Center of Laser Fusion, CAEP, China
16:10
ThP-T02-8
Poster (120 min)Hole Mobility in Strained Si/SiGe/Vicinal Si(110)58

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Grown by Gas Source MBE
K. Arimoto1 *, S. Yagi1, J. Yamanaka1, K. Nakagawa1, N.
Usami2, K. Sawano3
1
Univ. of Yamanashi, Japan, 2Nagoya Univ. Japan,
3
Tokyo City Univ., Japan
16:10
ThP-T02-9
Poster (120 min)
About typology of grain boundaries in
multicrystalline silicon based on high-purity
metallurgical silicon
S. M. Pescherova, R. V. Presnyakov *, A. I.
NepomnyashchikhA. P. Vinogradov Institute of Geochemistry SB RAS,
Russia
16:10
ThP-T02-10 Poster (120 min)The Influence of Stress-Induced Twins upon Surface
Morphology of SiGe/Si(110)
J. Yamanaka1 *, M. Shirakura2, C. Yamamoto2, 3, N.
Utsuyama1, K. Sato1, T. Yamada1, K. Arimoto1, K.
Nakagawa1
1
Center for Crystal Science and Technology, 2Center for
Instrumental Analysis, 3Center for Creative Technology,
University of Yamanashi, Japan
16:10
ThP-T02-11 Poster (120 min)Influences of Phosphorous δ-Doping at Ge Quantum
Dots / Si Interface on Photoluminescence Properties
and Dot Formation
K. Sawano*, K. Watanabe, K. Mizutani, X. Xu, T.
Maruizumi
Tokyo City University, Japan
16:10
ThP-T02-12 Poster (120 min)Tuning the Aluminum-Induced Crystallization
process to realize a poly-Si seed-layer suitable for
epitaxy
S. Tutashkonko1,2 *, N. Usami2
1
FUkushima Top-level United center for Renewable
Energy research (FUTURE-PV), Innovation Japan
Science and Technology Agency (JST), Japan, 2Nagoya
Univ., Japan
16:10
ThP-T02-13 Poster (120 min)Silicon crystal growth from a Si-Al melt
M. Gonik1 *, T. Carlberg2
1
Centre for Material Researches (PHOTON), Russia,
2
Mid Sweden University (FSCN), Sweden
16:10
ThP-T02-14 Poster (120 min)
Low-Temperature Selective Epitaxial Growth of Ge
on Si by using Metal Organic Chemical Vapor
Deposition
T. Washizu1 *, S. Ike1,2, Y. Inuzuka1, W. Takeuchi1, O.
Nakatsuka1, S. Zaima1,3
1
Graduate School of Eng., Nagoya Univ., Japan, 2JSPS
Research Fellow, Japan, 3IMaSS, Nagoya Univ., Japan
16:10
ThP-T02-15 Poster (120 min)Interdiffusion of Al and Si during thermal process ofbackside fields (BSF) of Si solar cell
S. Oyama*, T. Kobayashi, M. Watanabe
Gakushuin University, Japan
16:10
ThP-T02-16 Poster (120 min)Tomographic mapping analysis of high Ge content
SiGe epitaxial films with compositionally gradedlayers by X-ray microdiffraction
K. Shida1 *, S. Takeuchi1, Y. Imai2, S. Kimura2, A.
Sakai1
1Osaka University, Japan, 2JASRI/SPring-8, Japan

ThP-T03
2D Materials
16:10
ThP-T03-1
Poster (120 min)Growth mechanism and structure determination of
TiSeTe single crystals – A new ternary phase oftransition metal chalcogenides
A. K.Dasadia1 *, B. B.Nariaya2, A. R.Jani2
1
A. D. Patel Institute of Technology, India, 2Sardar Patel
University, India
16:10
ThP-T03-2
Poster (120 min)Synthesis of Orthorhombic Black PhosphorusSingle
Crystal by A Modified Chemical Vapor Transport
MethodQ.-F. Yan*, Z.-M. Zhang
Tsinghua University, China
16:10
ThP-T03-3
Poster (120 min)
Low-Temperature Growth of Highly Crystalline
Multilayer Graphene on Heteroepitaxial Nickel
Catalytic Thin Films
T. Matsumoto1 *, M. Katagiri2, R. Ifuku1, N. Sakuma2, T.
Sakai2, A. Kajita2
1
Tokyo Electron Ltd., Japan, 2Toshiba Corp., Japan
16:10
ThP-T03-4
Poster (120 min)Ultrafast One-Step Synthesis of Sub-5 mm
Orthorhombic Black Phosphorus Single Crystal by
Chemical Vapor Transport Reaction Method
Z.-M. Zhang*, Q.-F. Yan
Tsinghua University, China
16:10
ThP-T03-5
Poster (120 min)Two and Three- Dimensional Growth of Bi2Te3
crystal by chemical vapor transport (CVT) Method
and its Characterization
C. Bagavath*, J. Kuma
Anna University, India
16:10
ThP-T03-6
Poster (120 min)Pulsed Visible Lasers with Atomic-layer MoS2
Optical Modulator
Yuxia Zhang1 *, Haohai Yu1,Huaijin Zhang1, Yanxue
Chen2, Liangmo Mei2, Alberto Di
Lieto3, Mauro Tonelli3, and Jiyang Wang1
1
State Key Laboratory of Crystal Materials and Instituteof Crystal Materials, 2School of Physics, Shandong
University, China, 3NEST Istituto Nanoscienze-CNR and
Dipartimento di Fisica dell’Università di Pisa, Italy
16:10
ThP-T03-7
Poster (120 min)Low-temperature solid-phase crystallization of
sputtering deposited quasi-layered MoS2 thin film
S. Ishihara1 *, Y. Hibino1, N. Sawamoto1, T. Ohashi2, K.
Matsuura2, H. Wakabayashi2, A. Ogura1
1
Meiji University, Japan, 2Tokyo Institute of Technology,
Japan
16:10
ThP-T03-8
Poster (120 min)
Structural and Optical Properties of Few-layered
MoS2 Nanosheets Prepared by Solvent Exfoliation

59

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
D.-R. Hang*, K. Hari Sharma, D.-Y. Sun, F.-Y. Su, Sk
Emdadul Islam
National Sun Yat-sen University, Taiwan
16:10
ThP-T03-9
Poster (120 min)Two-dimensional Si-based nanostructures
synthesized from CaSi2 on Si substrates underchlorides vapor
X. Meng1 *, K. Tsukamoto2, K. Sasaki3, H. Tatsuoka3
1
Graduate School of Science and Technology, 2Facultyof Engineering, 3Graduate School of Integrated Scienceand Technology, Shizuoka University, Japan
16:10
ThP-T03-10 Poster (120 min)Synthesis of MoS2 monolayer using promoter
M. Bosi1 *, L. Nasi1, E. Scatena2,3, C. Cairone2,3, M.
Negri1,4, E. Rotunno1, F. Fabbri1,2
1
IMEM-CNR, Italy, 2KET-Lab c/o Italian Space Agency
Via del Politecnico, Italy, 3Consozio Hypatia, c/o ItalianSpace Agency, Via del Politecnico, Italy, 4EPFL,
Switzerland
16:10
ThP-T03-11 Poster (120 min)Optical investigation of tungsten-doped ReS2 layered
crystals
H. P. Hsu1 *, K. H. Lin2, Y. S. Huang21
Ming Chi University of Technology, Taiwan, 2National
Taiwan University of Science and Technology, Taiwan
16:10
ThP-T03-12 Poster (120 min)Numerical Study of Phonon Properties for Sub
2-dimensional Nano-carbon System by Force
Vibrational Method
S. Ohyagi*, Md. Sherajul Islam, T. Nambu, A.
Hashimoto
University of Fukui, Japan

ThP-T04
II-VI and Oxide Materials
16:10
ThP-T04-1
Poster (120 min)Low temperature growth of ZnO/MgZnO single
quantum well
X. Wang*, K. Saito, T. Tanaka, M. Nishio, Q.-X. Guo
Saga University, Japan
16:10
ThP-T04-2
Poster (120 min)Growth of high optical quality zinc chalcogenides
single crystals doped by Fe and Cr by the solid phaserecrystallization technique at barothermal treatment
E. Gavrishuk1, V. Ikonnikov1, T. Kotereva1, E.
Mozhevitina1,2, R. Avetisov1,2 *, S. Rodin1, D. Savin1, P.
Yunin3, I. Avetissov1
1
G. G. Devyatykh Institute of Chemistry of High-Purity
Substances RAS, Russia, 2D. Mendeleev University ofChemical Technology of Russia, Russia, 3Institute forPhysics of Microstructures RAS, Russia
16:10
ThP-T04-3
Poster (120 min)Synthesis and Characterization of Sol-gel Derived
CuGaO2 Semiconductor Thin Films for UVPhotodetector Application
C.-L. Chen, C.-Y. Tsay*
Feng Chia University, Taiwan
16:10
ThP-T04-4
Poster (120 min)
A comparison study of residual stress in sputtered

ZnO:Al thin films by spectroscopic ellipsometry and
XRD methods
K.-M. Lin1 *, R.-L. Lin1, C.-K. Hsu1, W.-T. Hsiao2
1Southern Taiwan University of Science and Technology,
Taiwan R.O.C., 2National Applied ResearchLaboratories, Taiwan R.O.C.
16:10
ThP-T04-5
Poster (120 min)Influence of NO gas addition on the properties of
ZnO films grown by catalytic reaction assisted
chemical vapor deposition
R. Tajima, Y. Ishidzuka, Y. Ohashi, Y. Tamayama, K.
Yasui*
Nagaoka University of Technology, Japan
16:10
ThP-T04-6
Poster (120 min)Hydrothermal Synthesis of Flower-like ZnO
Structures
Y. F. Wu1 *, W. Y. Chen1, H. P. Hsu1, J. C. Lee2
1
Ming Chi University of Technology, Taiwan, R.O.C.,
2
Taipei City University of Science and Technology,
Taiwan, R.O.C.
16:10
ThP-T04-7
Poster (120 min)Numerical simulation of growth of ZnTe crystal fromTe solution by vertical Bridgman method
L.-I. Yin1,2 *, W.-Q. Jie1,2, T. Wang1,2, B. Zhou1,2, F.
Yang1,2
1
Northwestern Polytechnical University, China,
2
Ministry of Industry and Information Technology, China
16:10
ThP-T04-8
Poster (120 min)Influence of argon pressure on the ZnSe single crystal
growthJ. H. He *, J. R. Chen, Z. X. Zhou, T. Y. Tian
Beijing Sinoma Synthetic Crystals Co. Ltd., China
16:10
ThP-T04-9
Poster (120 min)Mist-CVD-Grown Crystalline In2O3 Thin-Film
Transistors with Low Off-State Current
S. Aikawa1 *, K. Tanuma2, T. Kobayashi2, T.
Yamaguchi2, T. Onuma2, T. Honda2
1
Research Institute for Science and Technology,2
Department of Applied Physics, Kogakuin University,
Japan
16:10
ThP-T04-10 Poster (120 min)Growth of ZnMgSeTe nearly Lattice-matched to
ZnTe and p-type Doping by Low-pressure MOVPE
K. Saito*, M. Nishio, Y. Nakatsuru, T. Shono, Y.Matsuo,
A. Tomota, T. Tanaka, and Q. X. Guo
Saga University, Japan
16:10
ThP-T04-11 Poster (120 min)Photoluminescence and Electrical Properties of
P-doped ZnTe Layers Grown by Low Pressure
MOVPE
M. Nishio, K. Saito*, Y. Nakatsuru, T. Shono, Y.Matsuo,
A. Tomota, T. Tanaka, and Q. X. Guo
Saga University, Japan
16:10
ThP-T04-12 Poster (120 min)
Fabrication and characterization of (Ba,La)SnO 3
semiconductor films on (111)SrTiO3 substrate
K. Miura*, T. Yoshimura, A. Ashida, N. Fujimura
Osaka Prefecture University, Japan
16:10
ThP-T04-13 Poster (120 min)60

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Defect induced resistive switching effect and room
temperature ferromagnetism in (In, Cr)-codoped
ZnO thin film
S. S. Li1 *, Y. K. Su1, 2, 3, Y. M. Hu4
1
Department of Photonics, 2Institute of Microelectronics,
Department of Electrical Engineering, Advanced
Optoelectronic Technology Center, National Cheng
Kung University, Taiwan, 3Kun Shan University, Taiwan,
4
National University of Kaohsiung, Taiwan
16:10
ThP-T04-14 Poster (120 min)Crystal Structure of ε-Ga2O3 Thin Films by Single
Crystal X-Ray Diffraction
F. Mezzadri1, F. Boschi2,3 *, M. Bosi3, G. Calestani1, R.
Fornari2,31
Dept. of Chemistry, 2Dept. of Physics and Earth
Sciences, Parma University, Italy, 3IMEM-CNR Institute,
Italy
16:10
ThP-T04-15 Poster (120 min)*Late
News
Subsurface Damage Analyses of Cd0.90Zn0.10Te
Single Crystals
M. P. Kabukcuoglu1 *, Y. Ergunt2, B. Yasar3, Y. E.
Kalay3, R.Turan1
1
Department of Physics, 2Micro and Nanotechnology
Department, 3Metallurgical and Materials Engineering,
Middle East Technical Univeristy, Turkey

ThP-T05
Materials for Spintronics
16:10
ThP-T05-1
Poster (120 min)Growth, Structure and Thermal Expansion Anomaly
Single Crystal Ba3NbFe3S2O14 of Langasite Family
A. P. Dudka1, A. M. Balbashov2 *, I. S. Lyubutin1
1
The Institute of crystallography RAS, Russia, 2Moscow
Power Engineering Institute, Russia
16:10
ThP-T05-2
Poster (120 min)Preparation and Characterization of Bi substituted
gadolinium iron garnet with high Bi substitution on
glass substrates by Enhanced Metal Organic
Decomposition method
D. A. Wahid *, J. Sato, M. Hosoda, H. Shimizu
Tokyo University of Agriculture and Technology, Japan
16:10
ThP-T05-3
Poster (120 min)Dzyaloshinskii-Moriya interaction at metallic bilayerinterfaces
K. Yamamoto1 *, K. Nawa1, K. Nakamura1, T. Akiyama1,
T. Ito1, T. Ono2
1
Mie University, Japan, 2Kyoto University, Japan
16:10
ThP-T05-4
Poster (120 min)
Fabrication of fully epitaxial tunnel junctions with a
EuS ferromagnetic barrier by molecular beam
epitaxy
S. Sakawaki1, Y. Fujita2 *, S. Haraguchi1, S. Senba2, H.
Asada1, K. Kishimoto1, T. Koyanagi1
1
Yamaguchi University, Japan, 2National Institute ofTechnology, Ube College, Japan
16:10
ThP-T05-5
Poster (120 min)Role of atomic-layer alignments in intrinsic spin Hall
conductivity of Pt-based superlattices

Ta. Ito1 *, K. Nawa1, K. Nakamura1, T. Akiyama1, To.
Ito1, T. Ono2
1
Mie University, Japan, 2Kyoto University, Japan
16:10
ThP-T05-6
Poster (120 min)Purification of commercial yttrium metal: Removalof fluorine
A. Takenouchi1 *, T. Otomo1, K. Niwa1, Y. Saito1, M.
Sakai1, D. Kirigane1, M. Kosaka1, S. Hasegawa2
1
Saitama Universit, Japan, 2Osaka University, Japan
16:10
ThP-T05-7
Poster (120 min)
Fabrication of Sc and ScHx (x≒2) thin film and their
Hall effectM. Nishimagi1 *, T. Matsunaga1, M. Sakai1, K. Iizasa1, K.
Higuchi2, A. Kitajima2, S. Hasegawa2
1
Saitama University, Japan, 2Osaka University, Japan
16:10
ThP-T05-8
Poster (120 min)Rare earth ion doping in Ge deposited by molecularbeam epitaxy
Y. Miyata*, K. Ueno, T. Yoshimura, A. Ashida, N.
Fujimura
Osaka Prefecture Unibersity, Japan
16:10
ThP-T05-9
Poster (120 min)Crystal Chemistry and Magnetic Properties of A-site
Column Ordered Double Perovskites, LnMnGaTiO6
G. Shimura*, Y. Shirako, K. Niwa, M. Hasegawa
Nagoya University, Japan
16:10
ThP-T05-10 Poster (120 min)Effects of carrier-doping on Sm-induced levels in
GaSmN grown by plasma-assisted molecular beam
epitaxy
Y. Miyazaki*, K. Dehara, S. Hasegawa
Osaka University Japan
16:10
ThP-T05-11 Poster (120 min)Effect of Co doping on the Structural, Optical andMagnetic properties of SnO2 nanoparticles
synthesized by citrate gel combustion method
R. Renu, R. Ezhil Vizhi*
VIT University, India
16:10
ThP-T05-12 Poster (120 min)Influence of Al substitution on the Structural, Opticaland Gas Sensing properties of SnO2 nanoparticles
R. Renu, R. Ezhil Vizhi*
VIT University, India
16:10
ThP-T05-13 Poster (120 min)*Late
NewsHighly oriented epitaxial (α’’+α’)-Fe16N2 films on
α-Fe(001) buffered MgAl2O4(001) substrates andtheir magnetizations
S. Higashikozono1 *, K. Ito1,2,3, F. Takata1, T. Gushi1, K.
Toko1, T. Suemasu1
1
University of Tsukuba, Japan, 2Tohoku University,
Japan, 3Japan Society for the Promotion of Science,
Japan
16:10
ThP-T05-14 Poster (120 min)*Late
NewsFirst-principles Study of Rashba Effect in Bi-based
Systems
N. Yamaguchi1 *, H. Kotaka1, F. Ishii2
1
Graduate School of Natural Science and Technology,

61

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
2

Faculty of Mathematics and Physics, Kanazawa
University, Japan

ThP-T08
Materials for Organic Devices and Bio Applications
16:10
ThP-T08-1
Poster (120 min)Multiple Stoichiometries in Organic Single Crystalsof Charge Transfer Compound
P. Hu*, H. Jiang, C. Kloc
Nanyang Technological University, Singapore
16:10
ThP-T08-2
Poster (120 min)Study of Nano-Dimensional Self Assembly ofPoly(3-hexylthiophene) and Charge Transfer
Properties
B. R. Lin1, C. J. Tsou1, W. Y. Chou1,2, H. L. Cheng1,2 *1Department of Photonics, 2Advanced Optoelectronic
Technology Center, National Cheng Kung University,
Taiwan
16:10
ThP-T08-3
Poster (120 min)
Improved microstructure-dependent electricalperformance of polymeric thin-film transistors byhexamethylbenzene
F.-C. Wu1 *, C.-C. Lu1, W.-Y. Chou1, J. Ruan2, H.-L.
Cheng1
1
Department of Photonics, 2Department of Materials
Science and Engineering, National Cheng Kung
University, Taiwan
16:10
ThP-T08-4
Poster (120 min)Charge Transfer as a Tool for Designing Propertiesof Organic Crystals
C. Kloc*, H. Jiang, P. Hu
Nanyang Technological University, Singapore
16:10
ThP-T08-5
Poster (120 min)Microneedle Crystals of Cyano-substituted
Thiopene/Phenylene Co-oligomer Epitaxially Grown
on KCl Surface
K. Torii*, Y. Tanaka, S. Yoshinaga, H. Yanagi
Nara Institute of Science and Technology, Japan
16:10
ThP-T08-6
Poster (120 min)
Fabrication of Polycrystalline Films of
Cyano-substituted Thiophene/Phenylene Co-oligomer
by Vapor-deposition Transfer Method
S. Dokiya1 *, F. Sasaki2, H. Yanagi1
1
Nara Institute of Science and Technology, Japan,
2
National Institute of Advanced Industrial Science andTechnology, Japan
16:10
ThP-T08-7
Poster (120 min)
Mechanism of Selective Crystal Growth in
Non-Peripheral Hexyl-Substituted Phthalocyanine
and Tetrabenzotriazaporphyrin
M. Ohmori*, C. Nakano, A. Fujii, M. Ozaki
Osaka University, Japan
16:10
ThP-T08-8
Poster (120 min)Single-crystal Perovskites Prepared by
Simple-solution Process: Cast-capping Method
V.-C. Nguyen1 *, H. Katsuki1, F. Sasaki2, H. Yanagi1
1
Nara Institute of Science and Technology, Japan,
2
National Institute of Advanced Industrial Science andTechnology, Japan

16:10
ThP-T08-9
Poster (120 min)
Fabrication of CdTe Quantum Dots-Apoferritin
Arrays For Detection Of Neurotransmitters
T. H. Le*, S. J. Park
Gachon University, Korea
16:10
ThP-T08-10 Poster (120 min)Morphological Control of Blend Films Using Gas
Deposition Method for Organic Photovoltaics
Y. Shibata1 *, N. Ohashi2, Y. Yoshida3
1
Tohoku University, Japan, 2Suwa Tokyo University of
Science, Japan, 3National Institute of Advanced
Industrial and Science Technology (AIST), Japan
16:10
ThP-T08-11 Poster (120 min)Epitaxy of Lead-iodide Perovskite Thin Films onionic crystal substrates
Y. Yoshida1 *, K. Yase1, T. Tsutsui2
1
National Institute of Advanced Industrial Science andTechnology, Japan, 2Kyushu University, Japan
16:10
ThP-T08-12 Poster (120 min)Synthesis and characterization of Bifunctional
Fe3O4/SiO2/CsLa(WO4)2:Eu3+ Nanocomposites withcore-shell structure for Biomedical application
D. Balaji1 *, K. Kavirasu, S. Moorthy Babu
Anna University, India
16:10
ThP-T08-13 Poster (120 min)
The effect of air exposure on the crystal structure ofoligothiophene thin films investigated using in situ
X-ray diffraction
T. Watanabe1 *, T. Koganezawa1, M. Kikuchi2, C.
Videlot-Ackermann3, J. Ackermann3, H. Brisset4, N.
Yoshimoto2, I. Hirosawa1
1
Japan Synchrotron Radiation Research Institute, Japan,
2
Iwate University, Japan, 3Aix Marseille Université,
CNRS, France, 4Université, de Toulon MAPIEM, France
16:10
ThP-T08-14 Poster (120 min)Effects of alkyl-chain lengths on thin film growth ofα,ω-quaterthiophene derivatives observed by in-situ
2-dmensional X-ray diffraction
D. Hironai1, S. Koshika1, T. Koganezawa3, M. Suzuki4,
D. Kuzuhara1, H. Yamada4, I. Hirosawa3, M. Hasegawa2,
N. Yoshimoto1,2 *1Graduate School of Engineering, 2Soft-PathEngineering Research Center, Iwate University, Japan,
3
Japan Synchrotron Radiation Research Institute, Japan,
4
Nara Institute of Science and Technology, Japan
16:10
ThP-T08-15 Poster (120 min)Effect of polar interactions between substrate andlong-chain molecules on initial stage in thin film
growthH. Takeda*, T. Abe, K. Horai, M. Kamiya, R. Matsubara,
A. Kubono
Shizuoka University, Japan
16:10
ThP-T08-16 Poster (120 min)Single Crystal Preparation and X-ray Structure
Analysis of Non-peripherally Alkyl-substituted
Phthalocyanine Blends
C. Nakano1 *, M. Ohmori1, N. Tohnai2, A. Fujii1, M.
Ozaki1
1
Division of Electrical, Electronic and Information

62

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Engineering, 2Department of Material and Life Science,
Osaka University, Japan
16:10
ThP-T08-17 Poster (120 min)
Improved Crystallinity of Epitaxial C60 on Pentacene
Single Crystal by Preparation Temperature
R. Tsuruta1 *, Y. Mizuno2, T. Hosokai3, T. Koganezawa4,
H. Ishii2, Y. Nakayama1
1
Tokyo University of Science, Japan, 2Chiba University,
Japan, 3National Institute of Advanced Industrial Scienceand Technology (AIST), Japan, 4Japan Synchrotron
Radiation Research Institute (JASRI), Japan
16:10
ThP-T08-18 Poster (120 min)Preparation and characterizations of pure and Zn2+
doped CoFe2O4 magnetic nanoparticles foranti-microbial activities
D. Rajan Babu1 *, K. Venkatesan1, R. Vidya2
1
Department of Physics, School of Advanced Sciences,
India, 2Department of Bio-Medical Sciences, School of
Bio Science and Technology, VIT University, India
16:10
ThP-T08-19 Poster (120 min)Crystal Growth of Organic Semiconductor in Ionic
Liquid by Vacuum Vapor Deposition
S. Horike*, Y. Koshiba, M. Misaki, K. Ishida
Kobe University, Japan
16:10
ThP-T08-20 Poster (120 min)Growth-Condition dependent Morphology of
Uniaxially Aligned Perylenediimide Nanowires
S. Machida*, M. Tanikatsu, A. Itaya, N. Ikeda
Kyoto Institute of Technology, Japan
16:10
ThP-T08-21 Poster (120 min)Efficient Growth of C70 Nanowhiskers By
Liquid-Liquid Interfacial Precipitaion Method
H. Hayase1 *, S. Yamamoto1, K. Kato1, H. Murata1, K.
Miyazawa2, M. Tachibana1
1
Yokohama City University, Japan, 2National Institutefor Materials Science, Japan

ThP-T10
Silicon Carbide
16:10
ThP-T10-1
Poster (120 min)Numerical Investigation of Transport Phenomenaduring Crystal Growth of SiC by the Induction
Heating TSSG Method
N. Adkar1 *, T. Yamamoto1, Y. Okano1, T. Ujihara2, S.
Dost3
1Osaka University, Japan, 2Nagoya University, Japan,
3
University of Victoria, Canada
16:10
ThP-T10-2
Poster (120 min)Effect of Crystal Shape on Solution Flow and Surface
Morphology in Solution Growth of SiC
D. Koike1 *, T. Umezaki1, K. Murayama2, K. Aoyagi3, S.
Harada1, 2, M. Tagawa1, 2, T. Sakai3, T. Ujihara1, 2
1
Department of Materials Science and Engineering,
2
Institute of Materials and Systems for Sustainability(IMaSS), 3Green Mobility Collaborative ResearchCenter, Nagoya University, Japan
16:10
ThP-T10-3
Poster (120 min)Effect of etching process on fast-epitaxial SiC thick
films

K.-L. Mao1,2 *, Y.-M. Wang2, B. Li2, G.-Y. Zhao1
1
Xi’an University of Technology, China, 2The 2nd
Research Institute of CETC, China
16:10
ThP-T10-4
Poster (120 min)Modeling Solutions for Growth of Silicon Carbide
M. V. Bogdanov1, A. V. Kulik1, A. S. Segal1, A. N.
Vorob’ev1, E. V. Yakovlev1, M. Iizuka2, Y. Mukaiyama2*, V. V. Kalaev1
1
STR Group Inc., Russia, 2STR Japan K.K., Japan
16:10
ThP-T10-6
Poster (120 min)Parameters affecting n-type doping in 3C-SiC
M. Negri1, M. Bosi2 *, G. Attolini2, T. Rimoldi3, D. Orsi3,
L. Cristofolini3, E. Buffagni, C. Ferrari, G. Salviati2
1
EPFL, Switzerland, 2IMEM-CNR, Italy, 3Universitàdegli Studi di Parma, Italy
16:10
ThP-T10-7
Poster (120 min)Effects of properties of SiC powder source on growthof SiC crystal by PVT
X. J. Chen*, Y. Liu, J. Su, Y. Li
Xi’an Jiaotong University, China
16:10
ThP-T10-8
Poster (120 min)Carrier Lifetimes in 4H SiC Epitaxial layers withDifferent n-type Doping Levels
L. Lilja, I. Farkas, J. P. Bergman1 *Linköping University, Sweden
16:10
ThP-T10-9
Poster (120 min)Solution growth of SiC from metal solvent
K. Suzuki1, T. Taishi1,21Faculty of Engineering, 2Center for Energy andEnvironmental Science, Shinshu University, Japan
16:10
ThP-T10-10 Poster (120 min)*LateNews
The realization of high-quality 4H-SiC C-face grown
crystals by controlling the macrosteps formation
during solution growth
S. Y. Xiao1 *, S. Harada2, P. L. Chen1, K. Murayama2, T.
Ujihara2
1
Department of Materials Science and Engineering,
2
Institute of Materials and Systems for Sustainability(IMaSS), Nagoya University, Japan
16:10
ThP-T10-11 Poster (120 min)*Late
NewsInvestigation on the microstructure, mechanicalproperties and thermal shock stability of 3C-SiC
films deposited by low pressure chemical vapor
deposition
J. B. Wu*, W. C. Tsai, H. W. Cheng, J. J. Chang, T. S.
Chen, M. S. Leu
Industrial Technology Research Institute, Taiwan R.O.C.
BanquetThursday evening, 11 August, 19:00
Nagoya Marriott Associa Hotel

63

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Friday, 12 August
Plenary 7
Friday morning, 12 August, 8:30
Shirotori Hall
8:30
Plenary Lecture (40 min)
MOVPE Chemistry and Process Modeling: Where
are we and what can we do?
Thomas Kuech*
University of Wisconsin, USA
Coffee break
Friday morning, 12 August, 9:10
Event Hall, Shirotori Hall
Session Fr1
Friday morning, 12 August, 9:40
G06, G09, G11, T02, T03, T04, T05, T06, T08, T10

Fr1-G06
Bulk Crystal Growth
Room: Oral 10
9:40
Fr1-G06-1
Oral (15 min)
Evaluation of AlSb Crystal for Radiation Detector
Applications
Tao Wang*, Ziang Yin, Wei Wang, Jie Li, Fan Yang
Wanqi Jie
Northwestern Polytechnical University, China
9:55
Fr1-G06-2
Oral (15 min)Growth of LiIn1-xGaxSe2 Semi-Insulating Crystals
B. Wiggins1,2 *, A. Burger2,3, K. Stassun2,3, A. Stowe1,2
1
Y-12 National Security Complex, USA, 2Vanderbilt
University, USA, 3Fisk University, USA
10:10
Fr1-G06-3
Oral (15 min)Crystal growth of pyrochlore stannate
D. Prabhakaran*, A. T. Boothroyd
University of Oxford, UK
10:25
Fr1-G06-4
Oral (15 min)Growth of Brownmillerite Ca2Fe2O5 Single Crystals
in Different Ambience
S. Dhankhar1 *, G. Bhalerao2, S. Ganesamoorthy3, K.
Baskar4, S. Singh1
1
Anna University, India, 2UGC-DAE CSR Kalpakkam
Node, India, 3Material Science Group, IGCAR, India,
4
Manonmaniam Sundaranar University, India
10:40
Fr1-G06-5
Oral (15 min)Effect of Transition Metal Ions (Cd and Mn) on
Solubility, Growth, Linear, Nonlinear Optical andElectrical Properties of Li2SO4.H2O Single Crystals
A. Silambarasan*, P. Rajesh, P. Ramasamy
SSN College of Engineering, India
10:55
Fr1-G06-6
Oral (15 min) *Late News
Single crystal growth of Mg co-doped
Ce:Lu2Gd1(Ga,Al)5O12 by micro pulling down method
and their scintillation properties.
K. Kamada1,2 *, H. Yamaguchi3, A. Yamaji3, S.
Kurosawa1,3, Y. Shoji2,3, Y. Yokota1, Y. Ohashi3, A.

Yoshikawa1,2,3
1
New Industry Creation Hatchery Center, Tohoku
University, Japan, 2C&A Corporation, Japan, 3Institutefor Material Research, Tohoku University, Japan

Fr1-G09
In situ Observation and Characterization
Room: Oral 1
9:40
Fr1-G09-1
Invited oral (25 min)
Kinetic roughening via two-dimensional spinodal
decomposition in hematin crystallization
P. G. Vekilov1,2 *, K. N. Olafson1, J. D. Rimer1
1
Department of Chemical and Biomolecular Engineering,2
Department of Chemistry, University of Houston, USA
10:05
Fr1-G09-2
Invited oral (25 min)Enantioselective bias on circularly polarizedlaser-induced chiral crystallization from NaClO3
solution with plasmonic Ag nanoparticles
H. Niinomi1 *, T. Sugiyama2, M. Tagawa3, M.
Maruyama4, T. Omatsu1, T. Ujihara3, Y. Mori4
1
Chiba University, Japan, 2National Chiao Tung
University, Taiwan, 3Nagoya University, Japan, 4Osaka
University, Japan
10:30
Fr1-G09-3
Oral (15 min)Influence of the atmosphere on the in-situ observationof heated graphene layers
M. Kato*, K. Shihommatsu, Y. Homma, X. Zhao
Tokyo University of Science, Japan
10:45
Fr1-G09-4
Oral (15 min)In situ High Temperature NEXAFS Study on Initial
Growth Process of Carbon Nanotubes by Surface
Decomposition of SiC
T. Maruyama1,2*, S. Naritsuka1,2, K. Amemiya3
1
Department of Applied Chemistry, 2Department ofMaterials Science and Engineering, Meijo University,
Japan, 3High Energy Accelerator Research Oranization(KEK-PF), Japan
11:00
Fr1-G09-5
Oral (15 min)
Understanding the polymorphic transitions of linear
amino acids using in-situ characterisation
M. Smets*, S. Brugman, E. van Eck, J. van den Ende, H.
Meekes, H. Cuppen, E. Vlieg
Radboud University, The Netherlands
11:15
Fr1-G09-6
Oral (15 min)
Structure analysis of the liquid Ti near solid-liquidinterface of melted zone by laser-heating
N. N. Fujiwara1 *, D. Aoshima1, A. Nakamura1,
A.Mizuno2, M. Watanabe1
1Gakushuin University, Japan, 2National Institute ofTechnology, Hakodate Collage, Japan
11:30
Fr1-G09-7
Oral (15 min)
In-Situ Measurement of Lysozyme Crystal Growth
Rate vs Supersaturation with different impurity levelin the International Space Station
K. Tsukamoto1 *, H. Miura2, Y. Suzuki3, I. Yoshizaki4
1
Osaka University, Japan/Tohoku University, Japan,
2
Nagoya City University, Japan, 3Tokushima University,
Japan, 4Japan Aerospace Exploration Agency, Japan

64

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Fr1-G11
Industrial Crystallization
Room: Oral 2
9:40
Fr1-G11-1
Invited oral (25 min)Laser Heated Pedestal Growth and cladding of Yb
Doped CaAlGdO4 single crystals fibers
G. Maxwell*, B. Ponting, E. Gebremichael, R. Magana
Shasta Crystals, 1750 Cesar Chavez Unit J, USA
10:05
Fr1-G11-2
Oral (15 min)Effects of amaranth dye on the growth optical,
thermal, mechanical and electrical properties of KDP
crystalR. Paulraj*, S. Chandran, P. Ramasamy
SSN College of Engineering, India
10:20
Fr1-G11-3
Oral (15 min)
Bulk Hydrothermal KTiOPO4 Crystals forElectro-Optic Application
C.-L. Zhang1,2 *1China Nonferrous Metals (Guilin) Geology and Mining
Co., Ltd, China, 2Guilin Bairay PhotoelectricTechnology Co., Ltd., China
10:35
Fr1-G11-4
Oral (15 min)Crystal Growth of Nd:GdCOB with High Optical
Quality and Large Size
X. K. Han1 *, H. H.Yu1, H. J. Zhang1, C. Q. Ma2
1
Institute of Crystal Materials, 2School of Chemistry andChemical Engineering, Shandong University, China
10:50
Fr1-G11-5
Oral (15 min)Development of new alumina precipitation routes forcatalysis applications
R. Lafficher1,2 *, M. Digne1, F. Salvatori1, M. Boualleg1,
D. Colson2, F. Puel2,3
1
IFP Energies Nouvelles, France, 2Univ Lyon, Universite
Lyon 1, CNRS, France, 3LGPM, CentraleSupélec,Université Paris-Saclay, France
11:05
Fr1-G11-6
Oral (15 min)Nucleation kinetics assessment for carbamazepine
co-crystals crystallised from ethanolic solutions
S. Abd Rahim1 *, R. B. Hammond2, K. J. Roberts2, A. Y.
Sheikh3
1
Universiti Malaysia Pahang, Malaysia, 2University ofLeeds, UK, 3Solid State Chemistry, AbbVie Inc, USA
11:20
Fr1-G11-7
Oral (15 min)
The Role of Solvents on the Control of Liquid-Liquid
Phase Separation (LLPS) and Crystallization of
Vanillin
P. Parimaladevi, K. Srinivasan*
Bharthiar University, India.
11:35
Fr1-G11-8
Oral (15 min)
The Decopperisation and Coagulation by Use theCarbo-N-Ox
A. W. Bydałek1*, W. Wołczyński2, J.
Karwan-Baczewska1
1
AGH University of Science and Technology, Poland,
2Institute of Metallurgy and Materials Science, PAS,
Poland

Fr1-T02

Group IV Semiconductors
Room: Oral 8
9:40
Fr1-T02-1
Invited oral (25 min)Progress and challenges for cost effective kerfless
Silicon crystal growth for PV application
J. M. Serra1 *, J. Maia Alves1, A. M. Vallera1,2
1
Universidade de Lisboa, Portugal, 2SDSIL, CampoGrande, ED ICAT, Portugal
10:05
Fr1-T02-2
Oral (15 min)Influence of different nucleation layers on the initial
grain structure of multi-crystalline silicon ingots
I. Kupka1, C. Reimann1,2 *, T. Lehmann1, D. Oriwol3, F.
Kropfgans3, J. Friedrich1,21Fraunhofer THM, Germany, 2Fraunhofer IISB,
Germany, 3SolarWorld Innovations GmbH, Germany
10:20
Fr1-T02-3
Oral (15 min)On the growth mechanism of a muticrystalline siliconingot with small grains by using single layer siliconbeads
T. Muramatsu1 *, I. Takahashi1, G. Anandha Babu1,2, N.
Usami1
1
Nagoya University, Japan, 2SSN College of Engineering,
India
10:35
Fr1-T02-4
Oral (15 min)Controlling Impurity Distributions in Crystalline Si
for Solar Cells by Using Artificial Designed Defects
Y. Hayama*, I. Takahashi, N. Usami
Nagoya University, Japan
10:50
Fr1-T02-5
Oral (15 min)Influence of extraordinary long ingot heights on thewafer quality of high performance multi-crystalline
silicon for PV application
T. Lehmann1, I. Kupka1, M. Trempa2, M. Beier2, C.
Reimann1,2 *, D. Oriwol3, F. Kropfgans3, L. Sylla3, J.
Friedrich1,21Fraunhofer THM, Germany, 2Fraunhofer IISB,
Germany, 3SolarWorld Innovations GmbH, Germany
11:05
Fr1-T02-6
Oral (15 min)
Improvement of Process yield and Ingot Quality withHigh Purity Silazane-based Releasing Nitrides
Coatings in PV Silicon Crystallization
V. Brizé*, S. Bailly, M. Sérasset, D. Camel, B. Drevet
University Grenoble Alpes, INES, France/CEA, LITEN,
France
11:20
Fr1-T02-7
Oral (15 min)Development of growth technology of mc-Si ingot
suppressing impurity contamination
K. Fujiwara1 *, Y. Horioka2, S. Sakuragi3
1
Tohoku University, Japan, 2Frontier Technology
Business Research Institute Co. Ltd., Japan, 3Union
Materials Inc., Japan
11:35
Fr1-T02-8
Oral (15 min)Chemical and microstructural stability of silicon
nitride coatings used in the crystallization of PV
silicon ingots
V. Brizé1 *, A. Selzer1, R. Voytovych1, B. Drevet1, D.
Camel1, N. Eustathopoulos2
1
University Grenoble Alpes-INES/CEA, LITEN, France,
2
University Grenoble Alpes-CNRS, SIMaP, France

65

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)

Fr1-T03
2D Materials
Room: Oral 5
9:40
Fr1-T03-1
Invited oral (25 min)Interlayer resonant Raman modes in few-layer 2D
materials
N. Scheuschner*, R. Gillen, M. Staiger, J. Maultzsch
Technische Universitat Berlin, Germany
10:05
Fr1-T03-2
Oral (15 min)
Robust Phonon-Plasmon Coupling in
Quasi-Freestanding Graphene on Silicon Carbide
R. J. Koch1,2,3, S. Fryska2, M. Ostler1,2, M. Endlich3, F.
Speck1,2, T. Hänsel,3, J. A. Schaefer3,4, Th. Seyller1,2 *
1Technische Universität Chemnitz, Germany,
2
Universität Erlangen-Nürnberg, Germany, 3Technische
Universität Ilmenau, Germany, 4Montana State
University, USA
10:20
Fr1-T03-3
Oral (15 min)Graphene intercalation: A pathway towards
stabilizing new 2D crystals
Z. Y. Al Balushi1,2 *, K. Wang3, R. Krishna Ghosh2,4, S.
Datta2,3,4, J. A. Robinson1,2,3, J. M. Redwing1,2,3,4
1
Dept. of Materials Science and Engr., 2Center for
2-Dimensional and Layered Materials, 3Materials
Research Institute, 4Dept.of Electrical Engr., The
Pennsylvania State University, USA
10:35
Fr1-T03-4
Oral (15 min)Graphene/SiC(0001) interfaces induced by Siintercalation
A. Visikovskiy1 *, S. Kimoto1, T. Kajiwara1, M.
Yoshimura2, F. Komori3, S. Tanaka1
1
Kyushu University, Japan, 2Toyota Technological
Institute, Japan, 3University of Tokyo, Japan
10:50
Fr1-T03-5
Oral (15 min)Tunable Structure Phase Patterning and
Semiconductor-Metal Transition in MoTe2-WTe2
Single Crystal Systems via Isovalent Substitution
Y.-Y. Lv1, B.-B. Zhang1, S. H. Yao1 *, Y. B. Chen2, J.
Zhou1, Y. F. Chen1
1
National Laboratory of Solid State Microstructures andDepartment of Materials Science and Engineering,2
National Laboratory of Solid State Microstructure andDepartment of Physics, Nanjing University, China.
11:05
Fr1-T03-6
Oral (15 min)Monolayer-to-bilayer transformation of silicenes in a
CaSi2 single crystal
R. Yaokawa1 *, T. Ohsuna1, H. Nakano1,2
1
TOYOTA CENTRAL R&D LABS., INC., Japan, 2JST
Presto, Japan

Fr1-T04
II-VI and Oxide Materials
Room: Oral 4
9:40
Fr1-T04-3
Oral (15 min)Growth and Characterization of Large-Size ZnSe
Single Crystals
S. Wang1 *, A. Kopec1, A. G. Timmerman1, B.
Rangothamachar2, M. Dudley2

1

Fairfield Crystal Technology, USA, 2Stony Brook
University, USA
9:55
Fr1-T04-4
Oral (15 min)Travelling-solvent Floating-zone growth, electricalproperties of ZnO: Ga single crystals
Y.-F. Ma1,2, E. Bourret2, D. Perrodin2, Y. Zeng1, Y.-J.
Jiang1 *1
Beijing University of Technology, China, 2Lawrence
Berkeley National Laboratory, USA
10:10
Fr1-T04-5
Oral (15 min)Solution Growth of Zinc Oxide on Aluminum Zinc
Layered Double Hydroxides
C. Perfetti*, K. Abe
Nagoya Institute of Technology, Japan
10:25
Fr1-T04-6
Oral (15 min)Growth and Characterization of CTGS and YCOB
Crystals for Extreme Conditions Applications
Y. Q. Zheng1 *, X. N. Tu1,2, K. N. Xiong1, J. Xin1,2, H. K.
Kong1,2, E. W. Shi1
1
Shanghai Institute of Ceramics, Chinese Academy of
Sciences, China, 2University of Chinese Academy of
Sciences, China
10:40
Fr1-T04-7
Oral (15 min)Growth and characterization of ZnTe layers on
severely lattice mismatched sapphire substrates by
MBE
T. Nakasu1 *, W. Sun1, M. Kobayashi1,2, T. Asahi3
1Department of Electrical Engineering and Bioscience,2
Kagami Memorial Research Institute for Materials
Science and Technology, Waseda University, Japan, 3JX
Nippon Mining &Metals Corporation, Japan

Fr1-T05
Materials for Spintronics
Room: Oral 6
9:40
Fr1-T05-1
Invited oral (25 min)Rare earth nitrides: new materials forsemiconductor-based spintronics
F. Natali1 *, S. Vezian2, B. Ruck1, J. Trodahl1
1
Victoria University of Wellington, New Zealand,
2
Centre de Recherche sur l’Hétéro-Épitaxie et ses
Applications (CRHEA), Centre National de la Recherche
Scientifique, France
10:05
Fr1-T05-2
Oral (15 min)
Magnetic and magneto-optical properties ofGa1-xGdxN/GaN superlattices with GdN mole fraction
enhanced up to 100%
Y. Sugeta*, S. Hasegawa
Osaka University, Japan
10:20 Fr1-T05-3
Oral (15 min)Spin-dependent tunnelingin La0.67Sr0.33MnO3-basedmagnetic tunneljunctions with anLaMnO3barrier
T. Matou*, K. Takeshima, M. Tanaka, S. Ohya
The University of Tokyo, Japan
10:35
Fr1-T05-4
Oral (15 min)Crystal Growth and Spin Reorientation Transition in
Sm1-xRexFeO3 Orthoferrite
X.-Y. Zhao1,2, P.-W. Man1,2, T. Xie1,3, G.-H. Ma4, S.-X.
Cao4, L.-B. Su1, J.-Y. Xu3, A.-H. Wu1 *66

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
1

Shanghai Institute of Ceramics, Chinese Academy of
Science, China, 2Graduate School of the Chinese
Academy of Sciences, China, 3Shanghai Institute ofTechnology, China, 4Shanghai University, China
10:50
Fr1-T05-5
Oral (15 min)Studies on the structural and magnetic properties ofnanocrystalline Ba0.5Sr0.5Fe12-2x(ZnCo)xO19
synthesized by sol gel combustion method
V. Harikrishnan1, R. Ezhil Vizhi1 *, D. Rajan Babu1, P.
Saravanan2
1
VIT University, India, 2Defence Metallurgical ResearchLaboratory, India
11:05
Fr1-T05-6
Oral (15 min)Crystal growth and electronic properties of BiTeI
crystals
K. Kokh1,2,3 *, V. Golyashov2,3,4, O. Tereshchenko2,3,4
1
Sobolev Institute of Geology and Mineralogy, Russia,
2
Novosibirsk State University, Russia, 3Saint-Petersburg
State University, Russia, 4Rzhanov Institute of
Semiconductor Physics, Russia

Fr1-T06
Materials for Optical Devices
Room: Oral 7
9:40
Fr1-T06-1
Oral (15 min)Applications Based on Novel Effects Derived to the Si
Bulk Crystal Growth inside Si Melt without Contact
to Crucible Wall Using Noncontact Crucible Method
K. Nakajima1 *, S. Ono1, Y. Kaneko1, R. Murai1, K.
Shirasawa2, T. Fukuda2, H. Takato2, S. Castellanos3, M.
A. Jensen3, A Youssef3, T. Buonassisi3, F. Jay4, Y.
Veschetti4, A. Jouini4
1
JST, FUTURE-PV Innovation, Japan, 2FREA, AIST,Japan, 3Massachusetts Institute of Technology, USA,
4
CEATECH, LITEN, INES, France
9:66
Fr1-T06-3
Oral (15 min)Growth of single crystal sapphire for applications in
X-ray backscattering
V. E. Asadchikov1, P. Alexeev2,5, D. Bessas3, A. V.
Buzmakov1, A.Cecilia6, A. Chumakov3, A. Danilewsky7,
A. N. Deryabin1, J. Härtwig3, R .P. Hermann2,4,8, A.
Jafari2,3,4, V. M. Kanevsky1, I. A. Prokhorov1, B. S.
Roshchin1 *, I. Sergueev5, H.-C. Wille5
1
Shubnikov Institute of Crystallography RAS, Russia,
2
Jülich Centre for Neutron Science JCNS and Peter
Grünberg Institute PGI, Germany, 3European
Synchrotron Radiation Facility, France, 4University ofLiège, Belgium, 5Deutsches Elektronen-Synchrotron,
Germany, 6Karlsruhe Institute of Technology, Germany,
7
Albert-Ludwigs University Freiburg, Germany, 8Oak
Ridge National Laboratory, USA
10:10
Fr1-T06-4
Oral (15 min)
High-Performance CH3NH3PbI3 Perovskite Bulk
Single Crystal /PCBM Planar-Type Photodetector
Z.-P. Lian1 *, Q.-F. Yan1, J.-L. Sun2
1
Department of Chemistry, 2Collaborative Innovation
Center of Quantum Matter, State Key Laboratory of
Low-Dimensional Quantum Physics, Department of
Physics, Tsinghua University, China

10:25
Fr1-T06-5
Oral (15 min)
Structural, Mechanical and Nonlinear Properties of
KDP Single Crystals with Embedded Nanoparticles
and Organic Molecules
I. M.Pritula1 *, O. N. Bezkrovnaya1, E. I. Kostenyukova1,
E. F. Dolzhenkova1, V. Ya. Gayvoronsky2, V. G.
Grachev3, R. Tse3, G. I. Malovichko3
1
Institute for Single Crystals NAS of Ukraine, Ukraine,
2
Institute of Physics NAS of Ukraine, Ukraine, 3Montana
State University, USA
10:40
Fr1-T06-6
Oral (15 min)
Fabrication of Optical Element from Inversely
Soluble Lithium Sulfate Monohydrate Single Crystals
for SHG Applications
A. Silambarasan1 *, P. Rajesh1, P. Ramasamy1, A. K.
Karnal2, R. Bhatt2, I. Bhaumik2, P. K. Gupta2
1
SSN College of Engineering, India, 2Raja Ramanna
Centre for Advanced Technology, India
10:55
Fr1-T06-7
Oral (15 min)
Structural and optical properties of a novel three
dimensional crystal complex: Piperazinium bis (2carboxypyridine) monohydrate
P. Rekha1 *, G. Peramaiyan2, R. Mohan Kumar1, R.
Kanagadurai1
1
Presidency College, India, 2Academia of Sinica, Taiwan

Fr1-T08
Materials for Organic Devices and Bio Applications
Room: Oral 3
9:40
Fr1-T08-1
Invited oral (25 min)Molecular Orientation Control by using Epitaxial
Growth of Organic Materials for Organic Transistor
K. Yase*AIST, Japan
10:05
Fr1-T08-2
Invited oral (25 min)"Solution-epitaxy" Two-dimensional Crystals ofOrganic Semiconductors in Large Area
C.-H. Xu1,2, P. He1,2, J. Liu1,2, A. Cui1, H.-L. Dong1,
Y.-G. Zhen1, W. Chen4, W.-P. Hu1,3 *1Institute of Chemistry, Chinese Academy of Sciences,
China, 2University of Chinese Academy of Sciences,
China, 3Tianjin University, China, 4National Universityof Singapore, Singapore
10:30
Fr1-T08-4
Oral (15 min)Crystallization dynamics of organolead-halide
perovskite measured by real-time grazing incident
wide angle X-ray scattering
T. Miyadera1 *, T. N. Murakami1, T. Koganezawa2, T.
Sugita1, M. Chikamatsu1
1
National Institute of Advanced Industrial Science andTechnology (AIST), Japan, 2Japan Synchrotron
Radiation Research Institute (JASRI), Japan
10:45
Fr1-T08-5
Oral (15 min)Characteristics of PTB7-Th:C70 bulk heterojunction
photocells under low-light illumination
K. Tada*University of Hyogo, Japan
11:00
Fr1-T08-6
Oral (15 min)Growth and Transformation Kinetics of67

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
Hydroxyapatite in the Presence of Alginate Additives
S. Ucar1 *, S. H. Bjørnøy2, D. C. Bassett2, B. L. Strand3,
P. Sikorski2, J. P. Andreassen1
1
Department of Chemical Engineering, 2Department of
Physics, 3Department of Biotechnology, NTNU, Norway

Fr1-T10

S. Krukowski1 *, J. Soltys2, J. Piechota2
1Institute of High Pressure Physics, PAS, Poland,
2
University of Warsaw, Poland
Closing Ceremony
Friday afternoon, 12 August, 12:00
Shirotori Hall

Silicon Carbide
Room: Oral 9
9:40
Fr1-T10-1
Invited oral (25 min)Extended and Point Defects in 4H-SiC Epitaxial
LayersT. Kimoto*, C. Kawahara, A. Iijima, T. Okuda, E. Saito,
J. SudaKyoto University, Japan
10:05
Fr1-T10-2
Invited oral (25 min)Fast crystal growth of 4H-SiC by gas-source method
H. Tsuchida1 *, N. Hoshino1, I. Kamata1, Y. Tokuda2, 3, E.
Makino2, N. Sugiyama2, J. Kojima2
1
Central Research Institute of Electric Power Industry(CRIEPI), Japan, 2DENSO CORPORATION, Japan,
3
National Institute of Advanced Industrial Science andTechnology (AIST), Japan
10:30
Fr1-T10-3
Oral (15 min)
Dislocation velocity of Shockley partials for stacking
fault expansion in heavily-nitrogen-doped 4H-SiC
Y. Tokuda1, 3, 4 *, I. Kamata2, N. Hoshino2, T. Kato1, H.
Okumura1, T. Kimoto4, H. Tsuchida2
1
National Institute of Advanced Industrial Science andTechnology (AIST), Japan, 2Central Research Institute ofElectric Power Industry (CRIEPI), Japan, 3DENSOCORPORATION, Japan, 4Kyoto University, Japan
10:45
Fr1-T10-4
Oral (15 min)Difference of stacking faults expansion in highly
nitrogen doped and nitrogen-boron co-doped n-type
4H-SiC crystals
H. Suo1, 2 *, K. Eto1, T. Ise1, 3, Y. Tokuda1, 4, H. Osawa2,
H. Tsuchida5, T. Kato1, H. Okumura1
1
National Institute of Advanced Industrial Science andTechnology (AIST), Japan, 2Showa Denko K. K, Japan,
3
Asahi Diamond Industrial Corporation, Japan, 4DENSOCORPORATION, Japan, 5Central Research Institute ofElectric Power Industry (CRIEPI), Japan
11:00
Fr1-T10-5
Oral (15 min)Photoluminescence imaging of SiC epilayers forprediction of reliable bipolar devices
J. Friedrich1 *, L. Wehrhahn-Kilian2, K. O. Dohnke2, D.
Kaminzky1, B. Kallinger1, P. Berwian1, S. Oppel3
1
Fraunhofer IISB, Germany, 2Infineon Technologies AG,
Germany, 3Intego GmbH, Germany
11:15
Fr1-T10-6
Oral (15 min)A simple interpretation for polytypism in SiC withlattice defects
T. Ito*, T. Akiyama, K. Nakamura
Mie University, Japan
11:30
Fr1-T10-7
Oral (15 min)Intrasurface Electron Transition Contribution to
Energy of Adsorption of Silicon at the SiC(0001)
Surface – A Density Functional Theory (DFT) Study

68