TH *3!0 !CHIEVEMENT !WARDS RESEARCH ACHIEVEMENTS
2ECIPIENT ,IST4ITLE 0IONEERING RESEARCH IN SILICON-/3 DEVICES AND CONTRIBUTIONS TOTHE DEVELOPMENT OF ,3) TECHNOLOGIES

4ITLE 0IONEERING RESEARCH IN THE
APPLICATION OF BEAM TECHNOLOGIES INSEMICONDUCTOR ENGINEERING!WARD RECIPIENT 4AKUO 3UGANO!WARD RECIPIENT 3USUMU .AMBA

4AKUO 3UGANO HAS BEEN CONDUCTING RE

3USUMU .AMBA HAD BEEN CONDUCTINGSEARCH IN 3I -/3&%4 WHICH IS AT THE CORE OF
CURRENT ,3) TECHNOLOGIES SINCE SHORTLY AFTERPIONEERING RESEARCH IN ELECTRON ION AND PHOTON BEAM TECHNOLOGY SINCE THE LATE STHE BIRTH OF -/3&%4 TECHNOLOGIES IN THE EARLYBUT ONE OF HIS MOST IMPORTANT ACHIEVEMENTSS $R 3UGANO UNDERTOOK PIONEERING RESEARCH RELATED TO INTERFACEIRREGULARITIES AND STRUCTURAL ANALYSIS OF SILICON OXIDE FILM ON SILICON ANDIS THE INTRODUCTION OF THE ION IMPLANTATION TECHNOLOGY INTO SEMICONDUCTOR DEVICES !ROUND  THE THERMAL DIFFUSION PROCESS WAS USEDCLARIFIED THE MECHANISMS THAT FORMED THE BASIS FOR AN EFFECTIVE MEANSTO INTRODUCE IMPURITIES INTO SEMICONDUCTORS WHICH LIMITED THE FURTHEROF RESOLVING THE MAJOR PROBLEM OF INSTABILITY IN THE CHARACTERISTICS OF-/3 ELEMENTS BY ADDING PHOSPHOROUS ATOMS (E ALSO CONDUCTED RESEARCH IN EVALUATION METHODS FOR ACCURATELY MEASURING THE INTERFACEMINIATURIZATION OF TRANSISTORS !T THAT TIME $R .AMBA PROMOTED THEUSE OF THE ION IMPLANTATION TECHNIQUE TO OVERCOME THE LIMITATION (EDEMONSTRATED THAT THE IMPURITY DISTRIBUTION AND CONCENTRATION COULDTRAP LEVEL THAT EXISTS ON THE INTERFACE BETWEEN THE SILICON AND THE SILICON OXIDE FILM THUS MAKING SIGNIFICANT CONTRIBUTIONS TO THE THEORETICALSTUDY OF INTERFACE TRAP LEVELS THE CLARIFICATION OF THEIR ORIGINS AND THEBE CONTROLLED BY THE ION ENERGY AND THE ION DOSE AND WERE IN GOODAGREEMENT WITH THE THEORY )N THIS WAY HE ESTABLISHED THE SCIENTIFICFOUNDATIONS OF THE ION IMPLANTATION TECHNIQUE FOR THE IMPURITY DOPREDUCTION OF THESE TRAP LEVELS (E INVESTIGATED THE STRUCTURE OF DETERIORATION IN THE CHARACTERISTICS OF ULTRA SHORT CHANNELS AND DEMONSTRATEDTHE EFFECTIVENESS OF 3/) STRUCTURES ESTABLISHING A BASIC UNDERSTANDINGING )N  HE BUILT THE FIRST ION IMPLANTATION EQUIPMENT IN *APANBASED ON THE SCIENTIFIC BASIS HE ESTABLISHED WHICH HAD BEEN CARRIEDOUT AS A PROJECT SUPPORTED BY THE 2ESEARCH $EVELOPMENT #ORPORATIONOF DEVICE DESIGNS IN THE FIELD OF -/3 ,3) WHERE MINIATURIZATION CONTINUES TO EVOLVE 7ITH REGARD TO THE PHYSICS OF ELECTRON CONDUCTIONIN 3I -/3&%4S HE CONDUCTED PIONEERING RESEARCH THAT INCLUDED THEIN *APAN 4HE IMPORTANCE OF HIS ACHIEVEMENT IS OBVIOUS IF ONE REALIZESTHAT THE ION IMPLANTATION HAS NOW BEING USED AS A STANDARD TECHNIQUEIN THE PRESENT SEMICONDUCTOR INDUSTRYFIRST CLARIFICATION OF THE IMPORTANCE OF THE QUANTUM SIZE EFFECT IN &%4CHANNELS AT ROOM TEMPERATURE 4HIS RESEARCH CREATED AN EXTREMELY SIGNIFICANT hACADEMIC RIPPLE EFFECTv AS THE FOUNDATIONS FOR THE QUANTUM!NOTHER IMPORTANT ACHIEVEMENT WAS THE USE OF THE ION BEAM FORETCHING IN A SUBMICRON SCALE /NE OF THE BIGGEST PROBLEMS IN CONVENTIONAL WET ETCHING TECHNIQUE WAS A LIMITATION IN THE PATTERN FORMATIONEFFECT IN  $ SYSTEMS AND CONTRIBUTED TO FORMING THE GROUNDWORKFOR THE DEVELOPMENT OF HETEROSTRUCTURE ELEMENTS USING  $ SYSTEMS
3ILICON -/3 &%4 TECHNOLOGIES INCLUDE A VARIETY OF DIFFERENT ELEMENTSACCURACY THAT RESULTED FROM THE ISOTROPIC NATURE OF THE WET ETCHING
$R .AMBA INTRODUCED ION BEAM TECHNIQUE INTO THE ETCHING PROCESSTO OVERCOME THE PROBLEM AND SUCCEEDED IN DRASTICALLY IMPROVING THEINCLUDING PROCESS TECHNOLOGIES AND STRUCTURAL EVALUATIONS PHYSICS OFINTERFACE DEFECTS AND LOW DIMENSION ELECTRONIC CONDUCTION AND $R
3UGANO HAS DEMONSTRATED PIONEERING ACHIEVEMENTS IN ALL THESE AREAS)T IS WORTHY OF NOTE THAT IN ADDITION TO THE RESEARCH RESULTS OUTLINEDABOVE HE HAS PLAYED A LEADING ROLE IN MANPOWER TRAINING AND MAKINGIMPROVEMENTS TO BROAD ACADEMIC FOUNDATIONS THAT SUPPORT THE DEVELOPMENT OF THE ,3) INDUSTRY IN *APAN AND AS SUCH HAS MADE A DRAMATIC CONTRIBUTION TO THE GROWTH OF THE *APANESE ,3) INDUSTRY &OR MANYYEARS HE HAS SIGNIFICANTLY CONTRIBUTED TO THE DEVELOPMENT OF THE SEMICONDUCTOR INDUSTRY IN *APAN AND THROUGHOUT THE WORLD AND HE HASMADE MAJOR CONTRIBUTIONS TO THE PROSPERITY OF TODAYS SEMICONDUCTORFIELD AND ,3)S IN PARTICULAR 4HESE ACHIEVEMENTS ARE TRULY WORTHY OF THE*3!0 !CHIEVEMENT !WARDS RESEARCH ACHIEVEMENTS ETCHING PATTERN WITH THE ANISOTROPIC NATURE 4HIS HAD MADE IT POSSIBLE TO FABRICATE DEVICES WITH A SUBMICRON SCALE WHICH LED THE SEMICONDUCTOR DEVICE PROCESS FROM MICRON TO SUBMICRON ERA (E USED THETECHNIQUE TO FABRICATE THE ECHELLET DIFFRACTION GRATING FOR THE FIRSTTIME WITH OUTSTANDING RESOLUTION AND EXTREMELY SMALL STRAY LIGHT EVENENABLING THE INDUSTRIAL APPLICATION)N ADDITION TO THE ABOVE ACHIEVEMENTS HE HAD MADE PIONEERINGWORK ON THE FOCUSED ION BEAM TECHNOLOGY THE APPLICATION OF SYNCHROTRON RADIATION FOR THE SUBMICRON LITHOGRAPHY AND THE EXCIMER LASERLITHOGRAPHY AS WELL AS THE DEVELOPMENT OF NANOMETER SCALE ELECTRONBEAM LITHOGRAPHY SYSTEM (IS RESEARCH ACHIEVEMENTS RELATED TO VARIOUSMICROFABRICATION TECHNOLOGIES WITH ELECTRON ION AND PHOTON BEAMSHAVE LAID THE FOUNDATIONS FOR TODAYS NANO PROCESSING TECHNOLOGIESWHICH STILL MAINTAINS THE IMPORTANCE AND ORIGINALITY EVEN NOW 4HESEACHIEVEMENTS ARE TRULY WORTHY OF THE *3!0 !CHIEVEMENT !WARDS RESEARCH ACHIEVEMENTS *3!0 )NTERNATIONAL .O *ULY 