Printed with permission of The Institute of Pure and Applied Physics (IPAP)

JAPANESE JOURNAL OF APPLIED PHYSICS
Vol.45, No.12 (2006) pp.9001-9010[Part1]

Invited Review Paper

Breakthroughs in Improving Crystal Qualityof GaN and Invention of the p−n Junction
Blue-Light-Emitting Diode
Isamu Akasaki1,2,3,* and Hiroshi Amano1,2Marked improvements in the crystalline quality of GaN enabled the production of
GaN-based p−n junction blue-light-emitting
and violet-laser diodes. These robust, energetically efficient devices have opened up a
new frontier in optoelectronics. A new arenaof wide-bandgap semiconductors has beendeveloped due to marked improvements inthe crystalline quality of nitrides. In this article,
we review breakthroughs in the crystal growthand conductivity control of nitride semiconductors during the development of p−n junction blue-light-emitting devices. Recent progress mainly based on the present authors’
work and future prospects of nitride semiconductors are also discussed.
KEYWORDS:group III nitride semiconductors,
MOVPE, low-temperature buffer
layer, conductivity control, p−n junction, blue-light-emitting
diode, short-wavelength laser
diode, high-speed and highpower transistor

1. Introduction
Group III nitride semiconductors are recognized as one of the most promising materials
for fabricating optical devices in the visible
short-wavelength and UV region. To develop
such novel devices and clarify the intrinsic
materials properties of nitrides, it is essential
to grow high-quality single crystals and control
their electrical conductivity. However, highquality epitaxial GaN was impossible to growand its conductivity was uncontrollable. These
problems have prevented the development of
GaN-based p−n junction blue-light-emitting
devices for many years.1)
In 1986, we achieved a marked improvement in the crystal quality of GaN whichenabled us to realize p-type conduction in
nitrides and to control the conductivity ofn-type nitrides in 1989. In the same year,
these achievements led to the invention of theworld’s first GaN p−n junction blue/UV-lightemitting diode (LED). In 1990, stimulated emission in the UV region at room-temperature(RT), which is indispensable for laser action,
was also achieved. These breakthroughs
inspired nitride researchers around the world
to exert great effort, which eventually led tothe commercialization of high-performanceblue LEDs and long-lifetime violet-laser diodes(LDs), and to the development of nitride-based
devices such as UV detectors and high-speed
field-effect transistors.
Furthermore, quantum size and quantumconfined Stark effects in the nitride systemwere first verified in 1991 and 1997, respectively, using high-quality multiple-quantum-

well structures grown with a low-temperaturedeposited buffer layer.
Unique properties of nitrides, such as alarge piezoelectric effect, are also well understood owing to the marked improvement in
the crystal quality of nitrides.
Here, we review the breakthroughs during
the development of nitride-based blue-lightemitting devices and describe recent advancesin the crystal growth technology and UV-emitting devices of nitride semiconductors.

2. Research on Nitride
Semiconductors in Early Days
Because of the difficulty in growing
large bulk, single-crystal GaN, heteroepitaxial growth had to be adopted to grow
GaN thin films. In 1969, Maruska and Tietjen
succeeded in growing single-crystal GaN on
a sapphire substrate by hydride vapor phase
epitaxy (HVPE).2) They found such GaN to havea direct-transition-type band-structure with abandgap energy of about 3.39 eV at RT. Thisintensified research on blue LEDs based on
GaN as shown in period (A) in Fig. 1,3) whichshows the number of publications related tonitrides and major topics in nitride researchover the years. In 1971, Dingle et al. demonstrated optically pumped stimulated emission from a GaN at 2 K.4) In the same year, thefirst blue LED with a metal−insulator−semiconductor (MIS) structure was announced by
Pankove et al .5) Then [period (B) in Fig. 1],
Ejder reported the energy dispersion of therefractive index of GaN6) and Monemar determined the fundamental energy gap of GaN.7)

1 Department of Materials Science and Engineering and Nano-factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
2 Research Center for Nitride Semiconductors, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
3 Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan* Corresponding author: E-mail address: akasaki@ccmfs.meijo-u.ac.jp(Received August 28, 2006; accepted September 26, 2006; published online December 7, 2006) ©2006 The Japan Society of Applied Physics

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JSAP International No.16 (July 2007)

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Fig.1. Number of publications (INSPEC) and activities related to nitrides over the years. All
events are marked in the years, when they were first achieved. It is clear that the start of thesteep increases in the numbers of publications and accomplishments is due to the key inventions in the late 1980s. Green: Crystal Growth, Red: Conductivity Control and Physics, Blue:
Devices���Fig.2. (a) Schematic of new structure of GaN blue LED developed in 1979. The n+
GaN pillar reaching the chip surface through the n and i layers is shown in the inset. (b)Tricolor LED display using blue LEDs, which was later exhibited in Chicago in 1981 (byMatsushita Electric Industrial Co., Ltd.).

The luminescence properties of GaN werealso studied by many researchers during thisperiod.

nitride field, activities in nitride research rapidly
declined and the number of publications
decreased, as seen in period (B) in Fig. 1.

In contrast to traditional III−V compounds
such as GaAs and InP, it is quite difficult togrow high-quality epitaxial GaN films, particularly layers with flat surfaces free of cracks.
Moreover, residual donor concentrations
higher than 1019 cm−3 in GaN made it impossible to achieve p-type conduction and control
the conductivity of n-type nitrides. From thesecond half of the 1970s to the first half ofthe 1980s, there were no reports on significant improvements in the crystal quality of
GaN. Thus, many groups withdrew from the

3. Breakthrough in Crystal
Growth of GaN
3.1 Choice of MOVPE as growthmethodIn the early 1970s, while I (Isamu Akasaki)
was working at Matsushita Research Institute Tokyo, Inc. (MRIT), I decided to focus on
the research and development of GaN-based
blue-light-emitting devices using a p−n junction; something that no one had yet realized.

In 1974, I succeeded in growing single-crystal
GaN by MBE for the first time, although witha poor surface uniformity. With this accomplishment, in 1975, I was awarded a threeyear research grant by the Ministry of International Trade and Industry (MITI) of Japanfor the “Development of a Blue-Light-Emitting Devices based on GaN.”8) In 1978, myteam at MRIT developed a blue LED with an
external efficiency of 0.12 %; the highest everreported at that time. Figure 2(a)9,10) showsa schematic of the MIS-type blue LED with aunique device structure with selective n+-GaN
pillars buried in the top insulating GaN layer
and underlying n-GaN film. The n+ pillars canbe used as n+ cathodes. This structure was

JSAP International No.16 (July 2007)

5

(a)

1µm

(b)

1µm

Fig.3. SEM photographs of surfaces of GaN films grown on sapphire substrate by MOVPE (a) withoutand (b) with LT-AlN buffer layer.

with nanometer thick layers and the reactions
are reversible. Thus, these methods were notsuitable for producing well-controlled devices
based on high-quality GaN crystals. However,
MOVPE seemed to be more suitable for thegrowth of nitrides on highly mismatchedsubstrates, because this method had negligible reverse reactions and the growth rate
was between of those using the other two
methods. Another advantage of this method
was that alloy composition and impurity
doping could be readily controlled by varying
the flow rates of the source gases.
Thus, in 1979, I decided to adopt MOVPE
as the preferred growth method for GaN,
although it was rarely employed at the time. It
was a crucial decision.11,12) As for the substrate,
sapphire was provisionally chosen, which
was widely used because it was stable under
MOVPE growth conditions (above 1000 ºC andin NH3 atmosphere) and was similar to GaN interms of crystal symmetry.11,12)

3.2 Development of low-temperature (LT) buffer layer method for
MOVPE
Fig.4. Photoluminescence spectra of undoped GaN films grown on sapphire substrate by MOVPE(a) without (dashed line in the inset) and (b) with (solid line) LT-AlN buffer layer.

formed by single-step HVPE growth over SiO2
patterned substrates. Approximately 10,000
GaN blue LED test devices with such as-growncathodes, which simplified the fabrication ofLEDs, were manufactured. Figure 2(b) showsa tricolor LED display produced using suchblue LEDs, which was exhibited in 1981 in
Chicago by Matsushita Electric Industrial Co.,
Ltd. However, blue LEDs were not commercialized because the yield of devices was low
as a result of the poor controllability of the
thickness of the i-layer and the poor surface
uniformity.
However, owing to my extensive experience in handling GaN crystals, fluorescent
microscopy was able to show the existenceof high-quality microcrystals in tiny parts oflarger crystals containing cracks and pits. Also,
my team found that clusters of needle likecrystals, which looked like “GaN fungus,” left

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JSAP International No.16 (July 2007)

inside the growth reactor exhibited highly efficient light emission.
From these experiments, I reconfirmed thegreat potential of GaN as a blue luminescentmaterial and believed that p-type GaN could
indeed be produced if a whole wafer could
be made with the same quality as high-quality
microcrystals. Thus, in 1978, I decided to go
back to the basic, i.e., crystal growth, hoping
to remedy the stagnant situation mentioned
above.11,12) It has been known that crystal
quality is greatly affected by the method of
growth and conditions, hence, the choice ofthe growth method is critical in determining
the future of the research. Epitaxial GaN canbe grown by MBE, HVPE, and metalorganic
vapor phase epitaxy (MOVPE). MBE is prone
to nitrogen deficiency and the growth rate
was slow at that time. In the case of HVPE,
the growth rate is too fast to fabricate devices

In 1981, we started the MOVPE growthof GaN at Nagoya University (N.U.) usinga handmade MOVPE reactor, which wasconstructed by Koide and Amano, graduate
students in the department at that time. In
spite of the eager effort of my team at N.U.,
the MOVPE growth did not yield favorable
results. This was mainly due to the large lattice
and thermal mismatches between GaN andsapphire. To reduce interfacial free energy, wedeveloped “low-temperature (LT)-depositedbuffer layer technology,” which overcame
the problems mentioned in §2 and §3.1. This
technology was based on the idea of making
the growth conditions similar to those ofhomoepitaxy, in which there is no interfacial
free energy in principle, by predepositing, at
a low temperature, a very thin layer of material with physical properties similar to those ofboth GaN and sapphire. For the buffer layers,
we thought of using AlN, GaN, ZnO, and SiC,
because these materials had similar physicalproperties to GaN and sapphire. Among them,
we first chose AlN, which had been familiar tous since 1966.13) After many trials, we even-Invited Review Paper

As shown in Fig. 3, scanning electron
micrographs (SEM) of the surfaces of GaN
films grown on a sapphire substrate show thesurface morphology of the films to be markedly improved by the LT-AlN buffer layer. X-ray
diffraction profiles also showed that the crystal
quality of GaN was significantly improved bythis method.14,15) Near-band-edge emission
predominates the photoluminescence (PL)spectrum of the undoped GaN grown with the
LT-AlN buffer layer, whereas deep-level-related
yellow emission is the major emission fromGaN grown without the LT-AlN buffer layer, as
shown in Fig. 4.16) In the spectrum shown in
Fig. 5, which is from another GaN grown with
the LT-AlN buffer layer, free exciton lines FEA
and FEB and the impurity-bound excitons DBE
and ABE are clearly observed showing thatcrystalline quality is drastically improved.17) The
residual electron concentration of GaN grownwith an LT-AlN buffer layer decreased to theorder of 1017 cm−3 which is more than twoorders of magnitude lower than that of GaN
grown without the LT-AlN buffer layer.16,18)
Soon after, electron concentration decreased
to less than 1015 cm−3. Simultaneously, electron
mobility markedly increased to around several
hundreds of cm2 V−1 s−1.16,18) Cross-sectionaltransmission electron microscopy (TEM)
showed that crystal defects such as dislocations markedly decreased with the use of the
LT-AlN buffer layer.19)
These results clearly show that not only
the crystal quality but also the electrical andluminescence properties of GaN could bemarkedly improved at the same time. The
effect of the LT-AlN buffer layer is summarized in Fig. 6. The essential role of the LT-AlN
buffer layer was found to be related to boththe supply of high-density nucleation centers
having the same orientation as the substrate
and the promotion of the lateral growth ofthe epitaxial film due to the decrease in interfacial free energy between the epitaxial film
and the substrate.16,19)
Later, in 1990, we achieved stimulated
emission in the UV region at RT, which is�����������������������������������

tually succeeded in growing the world’s firstextremely high quality GaN single crystals in
1985.14)

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Fig.5. Photoluminescence spectra from cryogenic temperature to room temperature of GaN
layer grown on sapphire by MOVPE with LT-AlN buffer layer.

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Fig.6. Photographs of GaN films grown on sapphire substrate by MOVPE (a) without and (b) with LT-buffer layer. The
latter is quite transparent and colorless.

JSAP International No.16 (July 2007)

7

(1989)0.5mA /div.
p-n LEDMIS LED

5V/div.

Fig.7. (a) World’s first GaN p−n junction blue
LEDs on sapphire substrate. Only one LED islighting. (b) I−V characteristics of p−n junction LED(left) and MIS-LED (right).

indispensable for laser action, from GaN crystals for the first time.20) This showed that the
crystal quality of GaN was drastically improvedby the insertion of the LT-AlN buffer layer. In
1991, the LT-buffer method was implemented
using an LT-GaN buffer layer instead of an
LT-AlN buffer layer.21) Today, these LT-AlN and
LT-GaN buffer layer methods are indispensable
and standard in the growth of GaN and nitride
alloys on dissimilar substrates such as sapphireby MOVPE.

4. Conductivity Control of
Nitride Semiconductors
4.1 Realization of p-type conduction in GaN and GaN p−n junction
blue LEDs
Many groups have attempted to produce
p-type GaN, but without success. With thesuccessful control of the crystal quality of GaN,
we could start to work on p-type doping. By
using LT-AlN buffer layers, the residual donor
density in GaN also drastically decreased as
mentioned above. But in spite of repeatedefforts on Zn doping, no p-type GaN production succeeded. In 1987, we found that theintensity of Zn-related luminescence greatly

8

JSAP International No.16 (July 2007)(a)increases when high-quality Zn-doped GaN
grown with an LT-AlN buffer layer is irradiatedwith electron beams during cathodoluminescence (CL) measurement.22) It was thought that
this phenomenon named the LEEBI effect22)
is closely related with the activation of Zn
acceptors and hence with p-type conduction.
However, the crystals did not show p-typeconduction. In 1988, we noticed that Mg canbe an acceptor shallower than Zn, since its
electronegativity is between Zn and Ga.23) In
1989, we succeeded in doping Mg in highquality GaN using bis-Cp2Mg or bis-MCp2Mg asa Mg dopant, while maintaining a high crystal
quality using LT-AlN buffer layer technology.24,25)
Then, Mg-doped GaN samples were irradiated with electron beams in the same way as
Zn-doped samples. We found that the samples
became low resistivity p-type GaN.26) Immediately, we realized the world’s first GaN p−njunction blue/UV LED with encouraging current−voltage ( I −V ) characteristics in 1989, asshown in Figs. 7(a) and 7(b).26)
The detailed mechanism of the effectsof LEEBI on the electrical and luminescence
properties of Mg-doped or Zn-doped GaN is
not yet clear. As one possible mechanism, we
proposed the Coulombic explosion27) model.

(b)Electrons having energies of 6 kV can generatemany Auger electrons. As a result, the electronic configuration in an irradiated part ofGaN may change (so-called Coulombic explosion), so that weakly bonded atoms, particularly light atoms like hydrogen may move.
This results in the dissociation of Mg−H bonds
and the activation of Mg as an acceptor. Thishypothesis was supported by experimentresults which showed that the electron beam
activation effect occurs even at low temperatures.22,28)
We achieved p-type AlGaN in 199129) andp-type GaInN in 199530) in the same manner.
In 1992, p-type GaN was also produced by thethermal annealing of Mg-doped GaN grownwith an LT-GaN buffer layer.31) Afterwards,
p-type GaN was obtained by UV32) or electromagnetic wave irradiation33,34) at elevatedtemperatures below 400 ºC.
To realize p-type nitrides, it is essential to activate Mg acceptors by releasinghydrogen.35,36) However, it should be notedthat residual donors should be reduced before
solving problems related to the hydrogenpassivation of acceptors. This clearly demonstrates the importance of crystal growth.

Invited Review Paper

4.2 Conductivity control of n-typenitrides��η ext. of GaN-Based Blue LEDs [%]Regarding n-type doping, researchers
previously attempted doping Si using SiH4,37)
but it was difficult to control the conductivity
due to the high density of residual donors in
GaN grown without the LT-buffer layer. We
also achieved, for the first time, the conductivity control of n-type nitrides (GaN in 198938)
and AlGaN in 199139)) by doping Si using SiH4
as a Si dopant, while maintaining the highcrystalline quality of nitrides using the LT-AlN
buffer layer. The conductivity control of n-typenitrides is practically important as well as therealization of p-type conduction. Today, thismethod for controlling the conductivity ofn-type nitrides is used worldwide.

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Chronological developments in theexternal quantum efficiency, η ext of nitridebased blue LEDs are shown in Fig. 8. 1,3)
η ext saturated at about 0.1 %, before thebreakthroughs mentioned above. It began
to increase steeply soon after the success ingrowing high-quality nitride crystals, which
resulted in the GaN p−n junction LED. In 1992,
a high η ext of 1.5 % was achieved41) and, in
1993, a nitride-based blue LED with η ext of
2.7 % was first commercialized.42)
To improve the emission efficiency ofblue LEDs and violet LD performance, theuse of GaInN alloy as an active layer is essential. The first successful growth of singlecrystal GaInN alloy was reported in 1989−

LT-buffer

p-n junction

Commercial LED

Fig.8. Chronological change
in external quantum efficiency η ext of nitride-based
blue LEDs.

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Threshold Power (MW/cm ) for Stimulated Emission

5. Progress in Nitride-BasedBlue LEDs and Violet LDs

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These breakthroughs, namely, the growthof extremely high-quality GaN, the conductivity control of nitrides and the invention of
p−n junction blue LEDs in period (C) in Fig. 1,
inspired nitride researchers around the world
to exert great effort, which eventually led tothe marked increase in the number of publications on nitride materials and devices, thecommercialization of high-brightness blue LEDs
and long-lifetime violet LDs and the development of nitride-based electronic devices suchas high-speed transistors,40) as seen in period(D) in Fig. 1.

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Fig.9. Change in threshold
power P th for stimulated
emission by optical pumping(before 1995) and current
injection (after late 1995)
from nitrides.

JSAP International No.16 (July 2007)91991. 43,44) Although GaInN alloy was soon
used as an active layer of double-heterostructure (DH) blue LEDs, the devices functioned
via donor-and-acceptor-pair emission insteadof band-edge emission because of its insufficient quality. The growth of high-quality
GaInN/GaN quantum wells (QWs) 45) andmultiple QWs (MQWs)46,47) exhibiting distinct
band-edge emission currently used as anactive layer in blue LEDs, was first reported in
1995. At present, blue LEDs using such highquality GaInN/GaN MQWs have η ext higher
than 36 % 48) and are much brighter than
incandescent lamps. They have been used as
an excitation source of yellow phosphors forwhite LEDs.

low temperatures and its Pth was very high. In
1990, our group realized stimulated emission
at RT for the first time, from a GaN grownwith an LT-AlN buffer layer, showing that GaN
is of high-quality as shown previously.20) We
also suggested that a significant reduction in
Pth would be possible with the use of DH or
separate-confinement heterostructures (SCHs).
This is due to the fact that the refractive index
of the nitride system decreases with increasing
bandgap energy.49) Similar to the increase inblue LED efficiency shown in Fig. 8, Pth began
to decrease exponentially immediately after
the marked improvement in the crystal qualityof nitrides, as mentioned in §3.
In 1995, we demonstrated that the bandedge emission intensity from GaInN/GaN
MQWs increases greatly when the well widthis smaller than about 3 nm, which roughly
corresponds to the Bohr radius of GaN as

Figure 91,3) shows the threshold power,
Pth for stimulated emission from nitrides over
the years. Before 1986, stimulated emission
with optical excitation was obtained only at

Ga0.92 In0.08 N/GaN MQW
105

77K

PL Intensity [arb. units]

104

103

102

101
Fig.10. Dependence of band-edge photoluminescence intensity of GalnN/GaN
MQWs on GalnN well width.

10

JSAP International No.16 (July 2007)

Bulk GaInN

0

2

4

6

8 10 12 14 16

Well layer thickness [nm]shown in Fig. 10.46,47) These structures arewidely used as the active layer in blue LEDs
and violet LDs at present. This strong enhancement in emission intensity was later (1997)
qualitatively attributed to the suppression of
the quantum-confined Stark effect (QCSE)50,51)
caused by the presence of a large piezoelectric field50) in the GaInN well, which was foundto be about 1 MV/cm for an InN fraction of
0.1. In 1995, we achieved the first lasing
operation with pulsed current injection from a
GaInN/GaN QW device, although the lifetime
was very short.52) An LD with continuous-wave(CW) operation was announced in 1996.53)
In 1997, we found that AlGaN and GaInN
grow coherently on a GaN film grown with
LT-AlN buffer layers, even though each alloy
layer thickness exceeds the critical layer thickness.54) As a result, AlGaN and GaInN grown
on GaN are under tensile and compressive
stresses, respectively. These stresses generatelarge piezoelectric fields in the strained AlGaNand GaInN layers, as mentioned above.
Note that GaN grown on sapphire with
LT-buffer layers still contains a threading
dislocation density of approximately 10 8−1010 cm−2. Although these threading dislocations do not severely affect the lifetime of
QW-based blue LEDs, they do however accelerate the degradation of LDs. Therefore thereduction in threading dislocation density inthe active layer is indispensable for achieving
long-lifetime nitride-based LDs. Various technologies have been developed for reducing
the threading dislocation density. One is theapplication of micro-channel epitaxy (MCE),
which was proposed in 1988.55) An epitaxial
lateral overgrowth (ELO) method derived
from MCE has been reported for the reduction in threading dislocation density in nitrides.
A thick GaN layer with a threading dislocation density as low as 107 cm−2 was grownby HVPE using ELO.56) Another approach to
the reduction in threading dislocation density
to as low as 107 cm−2 over the whole wafer
using an LT interlayer (LT-IL) was reported by
us in 1998.57) Technologies using mass transport58) and growth on a grooved substrate
covered by an LT-AlN buffer layer59) were also
proposed for the reduction in threading dislocation density in nitrides. These three methods

Invited Review Paper

Today, long-lifetime violet LDs arecommercially available. In 1997, reliable violet
LDs with lifetimes longer than 10,000 h at RTwith a 2 mW operating power were fabricatedusing ELO-grown GaN.60) Recently, the lifetime of LD has been improved to 15,000 h at
60ºC with a 130 mW operating power, which
is sufficiently reliable for practical use and isapplicable to writing data on the optical disk
system.61)

6. Recent Advances in
UV-Emitting Devices with
Emphasis on Our Research inThis Field
Owing to the key inventions in the crystal
growth and conductivity control of nitrides,
nitride-based high-performance blue LEDs
and violet LDs are now commercially available. One of the next challenges is the fabrication of AlGaN-based UV-light-emitting
devices, particularly UV LDs. They can be usedas the light sources of super high-density
optical data storage, biological sensing andmedical treatment systems, and as an excitation source for photocatalysis. However,

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there are some difficulties to be resolved torealize high-performance UV devices withwavelengths shorter than 360 nm. In addition, it is very difficult or impossible to fabricate UV devices on GaN substrates, becauseof the lattice mismatch between GaN andthe overgrown AlGaN layers with high AlN
molar fractions. During AlGaN growth on
GaN substrates, tensile stress accumulates due
to lattice mismatch. Then, cracks are generated to relax the stress when the thickness of
AlGaN layers exceeds a critical value. Therefore, the above-mentioned approach used forvisible devices is not applicable to the fabrication of UV devices. Another serious problem
is that threading dislocations act more seriously as non-radiative recombination centersin the GaN/AlGaN system. Figure 11 shows
the PL intensities of two types of MQWs as afunction of threading dislocation density.62) Asshown, the two types of MQW have different
optical properties. The emission intensity of
the GaInN/GaN-MQW used in violet LDs is
not significantly dependent on the threading
dislocation density. In contrast, emission from
GaN/AlGaN-MQW for UV devices depends
greatly on the threading dislocation density.
However, conventional ELO methods for
reducing threading dislocation density in GaN
are not effective for the growth of AlGaN
with a low threading dislocation density
because of its low lateral growth rate and��������������������

do not require SiOx masks, which may diffuse
into the crystal and act as obstacles. Thesemethods enabled us to reduce the threading
dislocation density to the order of 107 cm−2.

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Fig.11. Band-edge photoluminescence intensity as function of dislocation density in GalnN/GaN and GaN/AlGaN
MQWs.

the adhesion of AlGaN polycrystals to dielectric masks. To solve the above-mentioned
problems, we developed a new growthmethod called hetero-ELO, which enables
the growth of a crack-free AlGaN templatewith a threading dislocation density as low
as 2 × 107 cm−2.63,64) This template was used
to develop high-efficiency UV LEDs65) and UV
LDs.66) Figure 12(a) shows the schematic of
the UV LD structure grown on a high-quality������������������
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Fig.12. (a) Schematic of 350.9 nm UV
LD fabricated by hetero-ELO, in which
AlGaN template was grown on grooved
GaN film covered with LT-AlN interlayer.
(b) Emission spectra of LD before andafter threshold.

JSAP International No.16 (July 2007)11

Al0.18Ga0.82N template.66) Hetero-ELO was used
for the growth of the AlGaN template, where
the width, spacing and depth of the grooves
were 10, 20, and 1.5 µm, respectively. The
LT-AlN interlayer with a thickness of 20 nm
was deposited at 500 ºC on a grooved GaN
film grown on sapphire with the previously
developed LT-AlN buffer layer. Figure 12(b)shows the EL spectra of the device thus fabricated under a pulsed current injection at RT.
At a current of 100 mA, band-edge spontaneous emission with a peak wavelengthof 353.8 nm was observed. With increasing
current up to 200 mA, the spectrum exhibited
distinct lasing operation at 350.9 nm. Recently,
343 nm is the record for the shortest lasing
wavelength in UV LDs.67) For the realizationof even shorter-wavelength LDs, high-quality
AlGaN layers with much higher AlN molar
fractions and with higher electrical conductivities are necessary.

LT-buffer layer is essential. The developmentof single-crystal substrates such as GaN 68)
and ZrB269) lattice-matched to nitrides will be
important for further reduction in dislocation
density as well as strain.

7. Conclusions

The importance of the LT-buffer layer
should be emphasized, because in all caseseven in ELO and hetero-ELO, the use of an

The marked improvement in crystal qualityof wide-bandgap nitride semiconductors
by pioneering low-temperature buffer layer
technology in MOVPE growth enabled us tocontrol the electrical conductivity of nitrides.
Unique properties such as large piezoelectric effects have been revealed owing to themarked improvement in the crystal quality of
nitrides. These breakthroughs led to the invention of the world’s first nitride-based p−n junction blue LED, and eventually to the commercialization of high-performance blue, green
and white LEDs and long-lifetime violet LDs.
High-speed transistors and high-sensitivity UV
detectors have also been developed.70) All ofthese devices are robust and enable significant
energy conservation. Today, the performance1 ) I. Akasaki and H. Amano: Jpn. J. Appl. Phys. 36(1997) 5393.
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12

JSAP International No.16 (July 2007)of these devices is progressing, mainly owing
to advances in the area of crystal growth.
Further studies are still required for the expansion of device applications toward frontier
regions, such as solid-state lighting, and highspeed and high-power electronics.

Acknowledgments
The authors thank many collaborators
at Matsushita Research Institute Tokyo, Inc.,
Nagoya University and Meijo University for
their great contributions throughout thisresearch.
This work received financial support fromthe Japanese Government [The Ministry ofInternational Trade and Industry, The Ministryof Education, Culture, Sports, Science andTechnology, The Japan Science and Technology
Agency and The Japan Society for the Promotion of Science] and Akasaki Research Center,
Nagoya University.

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Isamu Akasaki received BSfrom Kyoto University in 1952
and Ph D from Nagoya University in 1964. In 1952, he joined
Kobe Kogyo Corporation (currently, Fujitsu Ltd.). In 1959, hemoved to Nagoya University,where he held the positions ofresearch associate and assistant professor before being appointed associate professor. In 1964, he became head of Fundamental ResearchLaboratory IV and general manager of Semiconductor
Department, both at Matsushita Research Institute Tokyo, Inc. In 1981, he returned to Nagoya University as aprofessor. Since 1992, he has been a professor emeritus
of Nagoya University and a professor of Meijo University. He was a visiting professor of Research Center forInterface Quantum Electronics at Hokkaido University
from 1995 till 1996. Between 1987 and 1990 he served

as the project leader of “Research and Development of
GaN-based Blue-Light-Emitting Diode” sponsored by
the Japan Science and Technology Agency (JST). He also
served the project leader of “Research and Development of GaN-based Short-Wavelength Semiconductor
Laser” sponsored by the JST from 1993 till 2001. He
was the project leader of High-Tech Research Center of
Meijo University sponsored by the Ministry of Education,
Culture, Sports, Science and Technology of Japan (MEXT)
from 1996 till 2004. Since 2001, he has been a researchstaff of Akasaki Research Center at Nagoya University.
He was awarded Heinrich Welker Gold Medal, Medalof Honor (Purple Ribbon), IOCG Laudise Prize, IEEE Jack
A. Morton Award, Asahi Prize, JSAP’s Outstanding
Achievement Award and John Bardeen Award and soon. He has been selected as a Person of Cultural Merits
by the Japanese Government. He has authored and coauthored more than 500 journal papers.

Hiroshi Amano was born inShizuoka, Japan on September 11, 1960. He received BE,
ME, and DE in 1983, 1985, and1989 from Nagoya University.
From 1988 till 1992, he was a
research associate of Nagoya
University. In 1992, he moved
to Meijo University as an assistant professor. From 1998 till 2002, he was an associate professor. In 2002, he has become a professor. His
special field is semiconductor physics, especially crystal
growth and device physics of group III nitride semiconductors. He was awarded Optoelectronics ConferenceAward, IEEE/LEOS Engineering Achievement Award,
JSAP Paper Award C, Rank Award, Marubun Research,
The Takeda Award and SSDM Paper Award in 1994,
1996, 1998, 1998, 2001, 2002, and 2003, respectively.
He is authors and coauthors of more than 150 journal
papers and books.

JSAP International No.16 (July 2007)13