0RINTED WITH PERMISSION OF 4HE )NSTITUTE OF 0URE AND !PPLIED 0HYSICS )0!0*!0!.%3% */52.!, /& !00,)%$ 0(93)#3 ;0ART=!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  .OVEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  .OVEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS/XYGEN 6ACANCY )NDUCED 3UBSTANTIAL 4HRESHOLD
6OLTAGE 3HIFTS IN THE (F BASED (IGH + -)3&%4
WITH P POLY 3I 'ATES ! 4HEORETICAL !PPROACH

4HEORETICAL 0REDICTION OF #URIE 4EMPERATURE
IN :N #R 3 :N #R 3E AND :N #R 4E BY &IRST
0RINCIPLES #ALCULATIONS+ENJI 3HIRAISHI  +EISAKU 9AMADA  +AZUYOSHI 4ORII 9ASUSHI !KASAKA+IYOMI .AKAJIMA -ITSURU +ONNO 4OYOHIRO #HIKYOW (IROSHI +ITAJIMA
AND 4SUNETOSHI !RIKADO

4ETSUYA &UKUSHIMA0 ( $EDERICHS+AZUNORI 3ATO  (IROSHI +ATAYAMA 9OSHIDA AND

2ECEIVED 3EPTEMBER   ACCEPTED 3EPTEMBER   PUBLISHED /CTOBER  

2ECEIVED 3EPTEMBER   ACCEPTED 3EPTEMBER   PUBLISHED /CTOBER  ! THEORETICAL INVESTIGATION HAS BEEN MADE OF THE ORIGIN OF SUBSTAN
TIAL THRESHOLD VOLTAGE 6 TH SHIFTS OBSERVED IN P POLY 3I GATE (F BASEDMETAL INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTORS -)3&%4S BY FOCUS
ING ON THE EFFECT OF OXYGEN VACANCY 6 / FORMATION IN (F/ )T HAS BEEN
FOUND THAT 6 / FORMATION AND SUBSEQUENT ELECTRON TRANSFER ACROSS THE IN
TERFACE DEFINITELY CAUSES SUBSTANTIAL 6 TH SHIFTS ESPECIALLY IN P POLY 3I GATE-)3&%4S -OREOVER THE THEORY ALSO SYSTEMATICALLY REPRODUCES RECENT EXPERIMENTAL REPORTS THAT LARGE FLAT BAND 6 FB SHIFTS ARE OBSERVED EVEN IN
INTRINSIC POLY 3I GATES AND THAT THE 6 FB SHIFTS EXHIBIT A HIGH DEPENDENCE
ON (F3I/X THICKNESS ;$/)  **!0,=+EYWORDS HIGH K DIELECTRICS POLY 3I GATE ELECTRODE &ERMI LEVELPINNING THEORY OXYGEN VACANCY (F/ FLATBAND SHIFTTHRESHOLD VOLTAGE SHIFT )NSTITUTE OF 0HYSICS 5NIVERSITY OF 4SUKUBA 4SUKUBA   *APAN
 .ATIONAL )NSTITUTE FOR -ATERIAL 3CIENCE 4SUKUBA   *APAN
 .ANOTECHNOLOGY 2ESEARCH ,ABORATORY 7ASEDA 5NIVERSITY 3HINJUKU KU 4OKYO   *APAN
 3EMICONDUCTOR ,EADING %DGE 4ECHNOLOGIES )NC 4SUKUBA   *APAN
 !PPLICATION 4ECHNOLOGY $EPARTMENT .AKA #USTOMER #ENTER (ITACHI 3CIENCE 3YSTEMS ,TD(ITACHI .AKA   *APAN% MAIL ADDRESS SHIRAISHI COMASFRSCTSUKUBAACJP

*3!0 )NTERNATIONAL .O *ULY 4HE ELECTRONIC STRUCTURE AND THE MAGNETIC PROPERTIES OF :N #R 3
:N #R 3E AND :N #R 4E ARE CALCULATED BY USING THE +ORRINGA +OHN
2OSTOKER METHOD COMBINED WITH THE COHERENT POTENTIAL APPROXIMATION
++2 #0! WITHIN THE LOCAL DENSITY APPROXIMATION #URIE TEMPERATURESARE CALCULATED BY THE MEAN FIELD APPROXIMATION -&! AND BY -ONTE#ARLO SIMULATION )T IS FOUND THAT THE -&! STRONGLY OVERESTIMATES THE #U
RIE TEMPERATURES FOR LOW CONCENTRATIONS DUE TO SHORTRANGENESS OF INTERACTIONS IN :N #R 3 :N #R 3E AND :N #R 4E 4HE #URIE TEMPERATURES OF
:N #R 4E CALCULATED BY -ONTE #ARLO SIMULATION AGREE VERY WELL WITH RE
CENT EXPERIMENTAL VALUES ;$/)  **!0,=+EYWORDS AB INITIO CALCULATION DILUTE MAGNETIC SEMICONDUCTOR FER
ROMAGNETISM #URIE TEMPERATURE ZINC SULFUR ZINC SELENIDE ZINC TELLURIDE EXCHANGE COUPLING CONSTANT -ONTE#ARLO SIMULATION $EPARTMENT OF #ONDENSED -ATTER 0HYSICS 4HE )NSTITUTE OF 3CIENTIlC AND )NDUSTRIAL 2ESEARCH)3)2 /SAKA 5NIVERSITY   -IHOGAOKA )BARAKI /SAKA   *APAN )NSTITUT FàR &ESTKÚRPERFORSCHUNG &ORSCHUNGSZENTRUM *àLICH $  *àLICH 'ERMANY% MAIL ADDRESS FUKU CMPSANKENOSAKA UACJP

*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  .OVEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O "  .OVEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS#ONTINUOUS 7AVE -ILLIWATT 0OWER !L'A.
,IGHT %MITTING $IODES AT  NM.EW %LECTRON $OPED 3UPERCONDUCTING #UPRATE,IX3R#U/"R

7ENHONG 3UN 6INOD !DIVARAHAN -AXIM 3HATALOV 9OUNGBAE ,EE3HUAI 7U *INWEI 9ANG *IANPING :HANG  AND - !SIF +HAN

4ETSUYA +AJITA -ASATSUNE +ATO
4AKASHI .OJI AND 9OJI +OIKE

2ECEIVED 3EPTEMBER   ACCEPTED 3EPTEMBER   PUBLISHED /CTOBER  

2ECEIVED 3EPTEMBER   ACCEPTED 3EPTEMBER   PUBLISHED /CTOBER  7E REPORT ON DEEP ULTRAVIOLET LIGHT EMITTING DIODES USING !L'A.
MULTIPLE QUANTUM WELL ACTIVE REGIONS AND WITH PEAK EMISSION AT  NM
! NEW BUFFER LAYER AND ACTIVE REGION DESIGN RESULTED IN FLIP CHIP DEVICESWITH CONTINUOUS WAVE POWERS AS HIGH AS  M7 FOR A PUMP CURRENT
OF  M! AND A RECORD EXTERNAL QUANTUM EFFICIENCY OVER  4HE POWER
SATURATED AT  M7 FOR A DC PUMP CURRENT OF  M!
;$/)  **!0,=+EYWORDS !L'A. QUANTUM WELL ULTRAVIOLET LIGHT EMITTING DIODE! NEW ELECTRON DOPED SUPERCONDUCTOR ,IX 3R#U/"R WITH X  HAS SUCCESSFULLY BEEN SYNTHESIZED BY AN ELECTROCHEMICAL ,I INTERCALATIONTECHNIQUE 4HE MAGNETIC SUSCEPTIBILITY SHOWS SUPERCONDUCTIVITY OF BULKWITH THE SUPERCONDUCTING TRANSITION TEMPERATURE 4 C  + 4HIS COM
POUND IS THE FIRST ELECTRON DOPED SUPERCONDUCTING CUPRATE WITH THE+.I& STRUCTURE ;$/)  **!0,=+EYWORDS SUPERCONDUCTIVITY ,I INTERCALATION LAYERED PEROVSKITECUPRATE ELECTRON DOPING

 $EPARTMENT OF %LECTRICAL %NGINEERING 5NIVERSITY OF 3OUTH #AROLINA #OLUMBIA 3# 
53!
 3ENSOR %LECTRONIC 4ECHNOLOGY )NC  !TLAS 2D #OLUMBIA 3#  53!
% MAIL ADDRESS ASIF ENGRSCEDU$EPARTMENT OF !PPLIED 0HYSICS 'RADUATE 3CHOOL OF %NGINEERING 4OHOKU 5NIVERSITY   
!OBA !RAMAKI !OBA KU 3ENDAI   *APAN
 #ENTER FOR )NTERDISCIPLINARY 2ESEARCH 4OHOKU 5NIVERSITY   !OBA !RAMAKI !OBA KU 3ENDAI  *APAN% MAIL ADDRESS KATO TEIONAPPHTOHOKUACJP*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  .OVEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O "  .OVEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS! 0ROMISING %VALUATION -ETHOD OF
5LTRA ,OW %XPANSION 'LASSES FOR THE%XTREME 5LTRA 6IOLET ,ITHOGRAPHY 3YSTEM
BY THE ,INE &OCUS "EAM 5LTRASONIC -ATERIAL#HARACTERIZATION 3YSTEM,OW -ICROWAVE 3URFACE 2ESISTANCE IN.D"A#U/ b &ILMS 'ROWN BY -OLECULAR "EAM%PITAXY*UN ICHI +USHIBIKI -OTOTAKA !RAKAWA 9UJI /HASHI +OUJI 3UZUKI AND
4AKAHISA -ARUYAMA

7E REPORT THE GROWTH OF .D"A#U/ b FILMS ON  -G/ SUB
STRATE BY -OLECULAR "EAM %PITAXY -"%  ,ARGE AREA .D"A#U/ b FILMS
WITH HOMOGENEOUS SUPERCONDUCTING PROPERTIES WERE GROWN BY PRECISECONTROL OF STOICHIOMETRY AND THE OPTIMISATION OF GROWTH PARAMETERS
4HE STOICHIOMETRIC RATIO OF .D"A#U CLOSE TO  YIELDS FILMS WITH 4 #OF + AND * # VALUES ABOVE  -!CM AT  + ON BARE -G/ SUBSTRATE
4HE .D"A#U/ b FILMS GROWN UNDER OPTIMISED CONDITIONS HAD EXCELLENTIN PLANE TEXTURE AND GOOD METALLICITY 4HE MOST SIGNIFICANT CHARACTERISTICOF OUR -"% GROWN .D"A#U/ b FILMS IS THE VERY LOW MICROWAVE SURFACERESISTANCE VALUES AT ALL TEMPERATURE RANGE COMPARED TO ITS 9"A#U/ b
COUNTERPART WITH TYPICAL VALUE OF ^ «1 AT  +   '(Z /UR RESULTS
ON THE -"% GROWN .D"A#U/ b FILMS SUGGESTS THAT .D"A#U/ b IS A
SUPERIOR CHOICE FOR THE REALISATION OF COMMERCIAL MICROWAVE APPLICATIONS;$/)  **!0,=+EYWORDS .D"A#U/ b -G/ SURFACE RESISTANCE SUPERCONDUCTING
THIN FILM MOLECULAR BEAM EPITAXY

2ECEIVED 3EPTEMBER   ACCEPTED 3EPTEMBER   PUBLISHED /CTOBER  ! SUPER PRECISE METHOD OF EVALUATING THE COEFFICIENT OF THERMAL
EXPANSION #4% OF ULTRA LOW EXPANSION GLASSES WAS DEVELOPED USING
THE LINE FOCUS BEAM ULTRASONIC MATERIAL CHARACTERIZATION ,&" 5-#
SYSTEM AND WAS DEMONSTRATED FOR 4I/ DOPED 3I/ GLASS 4HE SENSITIVITY AND RESOLUTION IN THE VELOCITY MEASUREMENT OF LEAKY SURFACE ACOUS
TIC WAVES ,3!7S IN #4% WERE ESTIMATED TO BE  PPB+ MS AND¢  PPB+ FOR ¢ m m STANDARD DEVIATION AT  -(Z ,3!7 VELOCITY DIFFERENCES CAUSED BY DIFFERENT 4I/ CONCENTRATIONS AND DISTRIBUTIONSOR STRIAE IN THE SPECIMENS WERE SUCCESSFULLY DETECTED AND EVALUATEDPROVIDING TWO DIMENSIONAL INFORMATION 4HIS ULTRASONIC METHOD IS EFFEC
TIVE FOR EVALUATING ULTRA LOW EXPANSION GLASSES NEEDED FOR EXTREME ULTRAVIOLET LITHOGRAPHY %56, SYSTEMS ;$/)  **!0,=+EYWORDS LINE FOCUS BEAM ULTRASONIC MATERIAL CHARACTERIZATION SYSTEM VELOCITY MEASUREMENT LEAKY SURFACE ACOUSTIC WAVESULTRA LOW EXPANSION GLASSES 4I/ DOPED 3I/ GLASS #4%
EVALUATION %56, SYSTEM

4AKASHI 3UZUKI 4AKASHI )TOH

*OSE +URIAN AND -ICHIO .AITO
2ECEIVED 3EPTEMBER   ACCEPTED 3EPTEMBER   PUBLISHED /CTOBER  .44 "ASIC 2ESEARCH ,ABORATORIES .44 #ORPORATION   -ORINOSATO 7AKAMIYA !TSUGI SHI+ANAGAWA   *APAN% MAIL ADDRESS JKURIAN WILLBRLNTTCOJP$EPARTMENT OF %LECTRICAL %NGINEERING 4OHOKU 5NIVERSITY 3ENDAI   *APAN*3!0 )NTERNATIONAL .O *ULY 

*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  $ECEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  $ECEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS)N'A.'A. -ULTIPLE 1UANTUM $ISK
.ANOCOLUMN ,IGHT %MITTING $IODES 'ROWN ON
 3I 3UBSTRATE&IRST $EMONSTRATION OF 4% -ODE .ONRECIPROCAL
0ROPAGATION IN AN )N'A!S0)N0 !CTIVE
7AVEGUIDE FOR AN )NTEGRATABLE /PTICAL )SOLATOR!KIHIKO +IKUCHI -IZUE +AWAI -AKOTO 4ADA AND +ATSUMI +ISHINO(IROMASA 3HIMIZU AND 9OSHIAKI .AKANO2ECEIVED /CTOBER   ACCEPTED /CTOBER   PUBLISHED .OVEMBER  

2ECEIVED /CTOBER   ACCEPTED /CTOBER   PUBLISHED .OVEMBER  'A. NANOCOLUMN BASED )N'A.'A. MULTIPLE QUANTUM DISK -1$
LIGHT EMITTING DIODES ,%$S WITH A NOVEL COLUMNAR STRUCTURE WERE FAB
RICATED ON N TYPE  3I SUBSTRATES 4HE N 'A. AND )N'A.'A. -1$
ACTIVE REGION HAD ISOLATED COLUMNAR STRUCTURES WHILE THE DIAMETERS WEREGRADUALLY INCREASED IN THE P 'A. REGION BY CONTROLLING THE GROWTH CON
DITIONS #ONSEQUENTLY THE NANOCOLUMN ,%$ HAD A CONTINUOUS SURFACEWITHOUT CHASMS 4HIS NOVEL STRUCTURE ENABLES P TYPE ELECTRODES TO BE
FABRICATED BY THE CONVENTIONAL METHOD ON TOP OF NANOCOLUMN DEVICES
WHILE KEEPING THE SUPERIOR OPTICAL PROPERTIES OF THE ISOLATED NANOCOLUMNACTIVE REGION 4HE NANOCOLUMN ,%$ SHOWED CLEAR RECTIFYING BEHAVIOR
WITH A TYPICAL TURN ON VOLTAGE OF n 6 AT ROOM TEMPERATURE %LEC
TROLUMINESCENCE WAS OBSERVED THROUGH SEMITRANSPARENT ELECTRODES WITH
VARIOUS EMISSION COLORS FROM GREEN  NM TO RED  NM ;$/)  **!0,=+EYWORDS NANOCOLUMN NANOROD 'A. )N'A. LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY

7E HAVE PROPOSED AND FABRICATED A 4% MODE SEMICONDUCTOR WAVEGUIDE TYPE OPTICAL ISOLATOR BASED ON THE NONRECIPROCAL LOSS SHIFT AT A
WAVELENGTH h   NM &URTHERMORE WE DEMONSTRATE FOR THE FIRSTTIME A 4% MODE NONRECIPROCAL LOSS SHIFT OF  D"MM UNDER A MAGNETIC
FIELD OF n K' IN THE FACRICATED )N'A!S0 ACTIVE WAVEGUIDE WITH &E ONAN )N0 SUBSTRATE 4HIS RESULT OPENS A WAY TO THE MONOLITHIC INTEGRATION
OF SEMICONDUCTOR WAVEGUIDE TYPE OPTICAL ISOLATORS WITH EDGE EMITTINGSEMICONDUCTOR LASERS ;$/)  **!0,=+EYWORDS NONRECIPROCAL LOSS SHIFT SEMICONDUCTOR OPTICAL AMPLIFIERWAVEGUIDE TYPE OPTICAL ISOLATOR 4% MODE )N'A!S0 &E$EPARTMENT OF %LECTRICAL AND %LECTRONICS %NGINEERING 3OPHIA 5NIVERSITY   +IOI CHO #HIYODAKU 4OKYO   *APAN*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O !  $ECEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

5LTRASENSITIVE $ETECTION OF $.! (YBRIDIZATION
5SING #ARBON .ANOTUBE &IELD %FFECT 4RANSISTORS+ENZO -AEHASHI +AZUHIKO -ATSUMOTO +AGAN +ERMAN
9UZURU 4AKAMURA AND %IICHI 4AMIYA
2ECEIVED /CTOBER   ACCEPTED /CTOBER   PUBLISHED .OVEMBER  7E HAVE SENSITIVELY DETECTED $.! HYBRIDIZATION USING CARBON NANO
TUBE FIELD EFFECT TRANSISTORS #.4&%4S IN REAL TIME !MINO MODIFIEDPEPTIDE NUCLEIC ACID 0.! OLIGONUCLEOTIDES AT g END WERE COVALENTLYIMMOBILIZED ONTO THE !U SURFACE OF THE BACK GATE &OR  MER 0.! OLI
GONUCLETIDE PROBE FULL COMPLEMENTARY $.! WITH CONCENTRATION AS LOW
AS  F- SOLUTION COULD BE EFFECTIVELY DETECTED /UR #.4&%4 BASED BIO
CHIP IS A PROMISING CANDIDATE FOR THE DEVELOPMENT OF AN INTEGRATEDHIGH THROUGHPUT MULTIPLEXED $.! BIOSENSOR FOR MEDICAL FORENSIC ANDENVIRONMENTAL DIAGNOSTICS ;$/)  **!0,=+EYWORDS CARBON NANOTUBE FIELD EFFECT TRANSISTORS $.! HYBRIDIZATION 0.! PROBE ULTRASENSITIVITY REAL TIME LABEL FREE

4HE )NSTITUTE OF 3CIENTIlC AND )NDUSTRIAL 2ESEARCH /SAKA 5NIVERSITY   -IHOGAOKA )BARAKI/SAKA   *APAN AND #ORE 2ESEARCH FOR %VOLUTIONAL 3CIENCE AND 4ECHNOLOGY *APAN 3CI
ENCE AND 4ECHNOLOGY #ORPORATION    (ONMACHI +AWAGUCHI 3AITAMA   *APAN 3CHOOL OF -ATERIALS 3CIENCE *APAN !DVANCED )NSTITUTE OF 3CIENCE AND 4ECHNOLOGY   !SAHI
DAI 4ATSUNOKUCHI )SHIKAWA   *APAN% MAIL ADDRESS MAEHASHI SANKENOSAKA UACJP

*3!0 )NTERNATIONAL .O *ULY 2ESEARCH #ENTER FOR !DVANCED 3CIENCE AND 4ECHNOLOGY 4HE 5NIVERSITY OF 4OKYO *34 #2%34   +OMABA -EGURO KU 4OKYO   *APAN#ORRESPONDING AUTHOR % MAIL ADDRESS SHMZ HOTAKATU TOKYOACJP*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O "  $ECEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS.ANOSECOND 4IME 2ESOLVED 3TIMULATED 2AMAN
3PECTRA OF "ENZENE UNDER 3HOCK #OMPRESSIONUP TO  '0A /BSERVATION OF ,IQUID 3OLID
0HASE 4RANSITION!KITAKA -ATSUDA +EN ICHI +ONDO AND +AZUTAKA ' .AKAMURA
2ECEIVED /CTOBER   ACCEPTED /CTOBER   PUBLISHED .OVEMBER  .ANOSECOND TIME RESOLVED STIMULATED 2AMAN SPECTROSCOPY IS USED TO
INVESTIGATE THE SHOCK INDUCED PHASE TRANSITION OF LIQUID BENZENE ! SU
PERCOOLED STATE AND A LIQUID SOLID PHASE TRANSITION ARE OBSERVED AT SHOCKPRESSURES ABOVE  '0A 4IME RESOLVED 2AMAN SPECTRA REVEAL THAT THE
LIQUID STATE IS INITIALLY PRESERVED AND RAPIDLY TRANSFORMS TO THE SOLID STATEUNDER SHOCK COMPRESSION AT  '0A 2APID NUCLEATION AND GROWTH ON A
MICROMETER SCALE OCCURS WITHIN  NS ; $/)  **!0,=+EYWORDS BENZENE SHOCK COMPRESSION STIMULATED 2AMAN SPECTROSCOPY TIME RESOLVED SPECTROSCOPY PHASE TRANSITION-ATERIALS AND 3TRUCTURES ,ABORATORY 4OKYO )NSTITUTE OF 4ECHNOLOGY +ANAGAWA   *APAN

!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O "  $ECEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS$ILUTION %FFECTS ON #HEMICAL AND -AGNETIC#LUSTERS OF _ ,I&E/

3YNTHESIS OF 'A. #RYSTAL 5SING 'ALLIUM(YDRIDE

3HIGEMI +OHIKI +YOKO (ORI !KINORI +AWAGUCHI 9USUKE -URAKAWA(IROKAZU 3HIMOOKA 4AKAYUKI 4AJIRI (IROYUKI $EGUCHI-ASANORI -ITOME 9OSHIO "ANDO 3EI &UKUSHIMA -ASAO !RAI-ASAOKI /KU AND 4OETSU 3HISHIDO

&UMIO +AWAMURA -AMORU )MADE -ASASHI 9OSHIMURA 9USUKE -ORI
AND 4AKATOMO 3ASAKI2ECEIVED /CTOBER   ACCEPTED .OVEMBER   PUBLISHED .OVEMBER  ! NEW METHOD FOR SYNTHESIZING A LARGE AREA OF C AXIS 'A. FILM WAS
DEVELOPED 4HE GALLIUM HYDRIDE WHICH WAS FORMED BY THE REACTION BE
TWEEN METAL 'A AND HYDROGEN GAS WAS USED AS THE 'A SOURCE AND RE
ACTED WITH .( GAS TO GROW 'A. CRYSTALS ON THE SAPPHIRE  SUB
STRATE  «M THICK 'A. FILM WITH C AXIS ORIENTATION COULD BE GROWN ON
THE SUBSTRATE 3TABLE CONDITIONS FOR THE SYNTHESIS OF GALLIUM HYDRIDE BY
THE REACTION OF ( GAS WITH METAL 'A WERE EXAMINED !S A RESULT GALLIUM HYDRIDE IS STABLE AT ABOUT ª# WHICH IS A TEMPERATURE COMMONLYUSED FOR THE GROWTH OF 'A. 4HESE RESULTS SHOW THAT THE USE OF GALLIUMHYDRIDE AS THE PREDOMINANT SPECIES OF THE 'A SOURCE CAN PROVIDE A RELA
TIVELY INEXPENSIVE METHOD OF GROWING 'A. CRYSTALS AT A HIGH LEVEL OF PU
RITY ;$/)  **!0,=+EYWORDS 'A. SINGLE CRYSTAL GALLIUM HYDRIDE BULK GROWTH MECHANISM

7E HAVE SYNTHESIZED _ ,I&E X )NX / X      AND
 POWDERS BY CALCINATION OF ,I#/ &E/ AND )N/ MIXTURES )N 8 RAY
DIFFRACTION THE SAMPLE WITH LARGER X VALUE SHOWED LARGER LATTICE CONSTANT
OF THE CUBIC .A#L TYPE STRUCTURE !SIDE FROM ELECTRON DIFFRACTION PATTERNS OF THE CUBIC UNIT CELL WITH DIFFUSE SCATTERING FOR BOTH THE SAMPLESTHE X   SAMPLE DEMONSTRATED A DOUBLED STRUCTURE OF THE CUBIC UNIT CELL
WITH WAVY DIFFUSE SCATTERING THOUGH THE X   SAMPLE EXHIBITED THE
DOUBLED STRUCTURE WITH LESS INTENSIVE DIFFUSE SCATTERING )N COOLING HISTO
RY DEPENDENT DC SUSCEPTIBILITIES THE BIFURCATION POINT OF THE X   SAM
PLE WAS <APPROX + AND IT LOWERED FROM  TO  + WITH INCREASING THE
X VALUE FROM  TO  $ILUTION OF _ ,I&E/ WITH NONMAGNETIC )NIONS SUPPRESSED CHEMICAL CLUSTER FORMATION AT ROOM TEMPERATURE AND RE
DUCED TEMPERATURE OF FERROMAGNETIC CLUSTER FORMATION
;$/)  **!0,=+EYWORDS _ ,I&E/ CHEMICAL CLUSTER MAGNETIC CLUSTER SHORT RANGE
ORDER DILUTION$EPARTMENT OF -ATERIALS 3CIENCE +YUSHU )NSTITUTE OF 4ECHNOLOGY   3ENSUI 4OBATA +ITAKYUSHU  *APAN
 $EPARTMENT OF %LECTRONIC %NGINEERING +YUSHU )NSTITUTE OF 4ECHNOLOGY   3ENSUI 4OBATA+ITAKYUSHU   *APAN
 .ATIONAL )NSTITUTE OF -ATERIALS 3CIENCE   .AMIKI 4SUKUBA )BARAKI   *APAN )NSTITUTE FOR -ATERIALS 2ESEARCH 4OHOKU 5NIVERSITY    +ATAHIRA !OBA 3ENDAI   *APAN*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O "  $ECEMBER ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

2EDUCTION OF 3URFACE 2ESISTANCE OF%R"A#U/ b &ILMS BY "A:R/ .ANO 0ARTICLE)NCLUSION-ASASHI -UKAIDA  -ASASHI )TO  2YUSUKE +ITA  3HIGERU (ORII !TARU )CHINOSE  +ANAME -ATSUMOTO  9UTAKA 9OSHIDA !TSUSHI 3AITO +UNIHIRO +OIKE &UMIHIKO (IROSE AND
3HIGETOSHI /HSHIMA2ECEIVED /CTOBER   ACCEPTED /CTOBER   PUBLISHED .OVEMBER  ,OW SURFACE RESISTANCE IS ACHIEVED BY INTRODUCING "A:R/ NANO PAR
TICLES IN HIGH CRYSTALLINE QUALITY %R"A#U/ b FILMS 4HE SURFACE RESISTANCE
OF A %R"A#U/ b FILM WITH "A:R/ NANO PARTICLES GROWN BY PULSED LASERDEPOSITION IS  OF THAT WITHOUT "A:R/ NANO PARTICLES NEAR  + 4HISRESULT SUGGESTS THAT THE %R"A#U/ b FILMS WITH "A:R/ NANO PARTICLESHAVE POTENTIAL AS HIGH POWER MICROWAVE EMITTING DEVICES ! NEW DIREC
TION IS SHOWN FOR REDUCING THE SURFACE RESISTANCE OF SUPERCONDUCTINGFILMS ;$/)  **!0,=+EYWORDS %R"A#U/ b "A:R/ NANO PARTICLES SURFACE RESISTANCEPINNING CENTER
 9AMAGATA 5NIVERSITY *ONAN 9ONEZAWA 9AMAGATA   *APAN
 3HIZUOKA 5NIVERSITY *OHOKU (AMAMATSU 3HIZUOKA   *APAN
 5NIVERSITY OF 4OKYO (ONGO "UNKYO KU 4OKYO   *APAN
 #ENTRAL 2ESEARCH )NSTITUTE OF %LECTRIC 0OWER )NDUSTRY 9OKOSUKA +ANAGAWA   *APAN
 +YOTO 5NIVERSITY 9OSHIDAHONMACHI 3AKYO KU +YOTO   *APAN
 .AGOYA 5NIVERSITY FUROCHO CHIKUSA KU NAGOYA !ICHI   *APAN
 *APAN 3CIENCE AND 4ECHNOLOGY !GENCY (ONMACHI +AWAGUCHI 3AITAMA   *APAN% MAIL ADDRESS MUKAIDA YZYAMAGATA UACJP

2ECEIVED /CTOBER   ACCEPTED .OVEMBER   PUBLISHED $ECEMBER  'RADUATE SCHOOL OF %LECTRICAL %NGINEERING /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN% MAIL ADDRESS FKAWAMURA SSKPWRENGOSAKA UACJP*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS:N X#DX/:N/ (ETEROSTRUCTURES FOR 6ISIBLE,IGHT %MITTING $EVICES!TSUSHI .AKAMURA *UNJI )SHIHARA 3ATOSHI 3HIGEMORI
+ENJI 9AMAMOTO 4ORU !OKI  (IDEKI 'OTOH AND *IRO 4EMMYO 
2ECEIVED /CTOBER   ACCEPTED .OVEMBER   PUBLISHED $ECEMBER  7URTZITE :N X #DX /:N/ HETEROSTRUCTURES WERE SUCCESSFULLY GROWN BY
REMOTE PLASMA ENHANCED METALORGANIC CHEMICAL VAPOR DEPOSITION 20%-/#6$ AND WERE INVESTIGATED BY PHOTOLUMINESCENCE 0, SPECTROSCOPY
4HE FLATNESS OF :N X #DX / FILMS WAS INVESTIGATED BY AN ATOMIC FORCE MICROSCOPE !&- INDICATING THE TYPICAL 2-3 VALUE OF  NM 4HE OPTICALPROPERTIES OF THE :N#D/ FILM WERE CHARACTERIZED BY MICRO 0, AT  +EXHIBITING MICRO STRUCTURAL AND POSITIONAL UNIFORMITIES IN THE FILMS )N THE
DOUBLE HETEROSTRUCTURE CONSISTING OF :N/:N#D/:N/ TEMPERATURE AND EXCITATION INTENSITY DEPENDENCIES OF 0, SPECTRA WERE EXAMINED
4HE 0, EMISSION IS CHARACTERIZED AS LOCALIZED AND FREE EXCITON EMISSION !
DEPENDENCE WITH A SLOPE NEAR UNITY IS OBTAINED FROM THE EXCITATION DE
PENDENCE OF THE 0, INTENSITY "LUE GREEN EMISSION  E6 WAS DEMONSTRATED FROM THE DOUBLE HETEROSTRUCTURE AT ROOM TEMPERATURE
;$/)  **!0,=+EYWORDS :N/ :N#D/ HETEROSTRUCTURE REMOTE PLASMA ENHANCED-/#6$ PHOTOLUMINESCENCE LIGHT EMITTING DEVICE 'RADUATE 3CHOOL OF %LECTRONIC 3CIENCE AND 4ECHNOLOGY 3HIZUOKA 5NIVERSITY    *OHOKU(AMAMATSU   *APAN 2ESEARCH )NSTITUTE OF %LECTRONICS 3HIZUOKA 5NIVERSITY    *OHOKU (AMAMATSU  *APAN
 .44 "ASIC 2ESEARCH ,ABORATORIES .44 #ORPORATION   -ORINOSATO 7AKAMIYA !TSUGI SHI+ANAGAWA   *APAN#ORRESPONDING AUTHOR % MAIL ADDRESS NAKAMURA NVRCRIESHIZUOKAACJP
0RESENT ADDRESS 4OYODA 'OSEI #O .ISHIKASUGAI !ICHI   *APAN

*3!0 )NTERNATIONAL .O *ULY 

*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS%PITAXIAL 'ROWTH OF 'A. ON    ` 'A/
3UBSTRATES BY -ETALORGANIC 6APOR 0HASE%PITAXY

0ELTIER %FFECT IN 3UB MICRON 3IZE -ETALLIC*UNCTIONS+IYOSHI 3HIMAMURA %NCARNACIØN ' 6ÓLLORA +AY $OMEN+AZUO !OKI AND .OBORU )CHINOSE

+EIICHI 9UI2ECEIVED .OVEMBER   ACCEPTED .OVEMBER   PUBLISHED $ECEMBER  %PITAXIAL GROWTH OF NITRIDE COMPOUNDS BY THE METALORGANIC VAPOR
PHASE EPITAXY -/60% TECHNIQUE IS DEMONSTRATED FOR THE FIRST TIME ON` 'A/ SINGLE CRYSTAL SUBSTRATES WHICH ARE NEAR 56 TRANSPARENT AND
N TYPE CONDUCTIVE (IGH QUALITY     'A. EPI LAYER WITH A NARROWBANDEDGE LUMINESCENCE WAS OBTAINED USING A LOW TEMPERATURE CONDUC
TIVE BUFFER LAYER )N'A. MULTI QUANTUM WELL -17 STRUCTURE WAS ALSOSUCCESSFULLY GROWN 4HE FIRST BLUE LIGHT EMITTING DIODE ,%$ ON ` 'A/
WITH VERTICAL CURRENT INJECTION IS DEMONSTRATED;$/)  **!0,=+EYWORDS ` 'A/ 'A. SUBSTRATE TRANSPARENT CONDUCTIVE OXIDE-/60% ,%$:!)+%. 7ASEDA 5NIVERSITY    .ISHIWASEDA 3HINJUKU KU 4OKYO   *APAN
 %UDYNA $EVICES )NC   -ORINOSATO 7AKAMIYA !TSUGI +ANAGAWA   *APAN
 +OHA #O ,TD    +OUYAMA .ERIMA KU 4OKYO   *APAN#ORRESPONDING AUTHOR % MAIL ADDRESS SHIMAK WASEDAJP*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

8 RAY !BSORPTION AND 8 RAY -AGNETIC #IRCULAR$ICHROISM 3TUDIES OF A -ONATOMIC &E,AYER &ACING A 3INGLE #RYSTALLINE -G/
4UNNEL "ARRIER+OYA -IYOKAWA 3HINJI 3AITO 4OSHIKAZU +ATAYAMA
4OSHIAKI 3AITO 4OMOYUKI +AMINO +OJI (ANASHIMA 9OSHISHIGE 3UZUKI+AZUTOSHI -AMIYA 4SUNEHARU +OIDE AND 3HINJI 9UASA !KIO &UKUSHIMA +OJIRO 9AGAMI !SHWIN ! 4ULAPURKAR9OSHISHIGE 3UZUKI  (ITOSHI +UBOTA  !TSUSHI 9AMAMOTO AND
3HINJI 9UASA 
2ECEIVED /CTOBER   ACCEPTED .OVEMBER   PUBLISHED $ECEMBER  2ESISTANCE 2 CURRENT  ) CURVES IN TRILAYER #00 '-2 CURRENT PER
PENDICULAR TO PLANE GIANT MAGNETORESISTANCE ELEMENTS SHOW A PARABOLIC
BASELINE BECAUSE OF *OULE HEATING AND ABRUPT JUMPS DUE TO MAGNETIZATION REVERSALS 4HE BOTTOM OF THE PARABOLIC BASELINE SHIFTS IN ONE CURRENT
DIRECTION FOR REASONS THAT WERE PREVIOUSLY UNCLEAR /UR STUDY OF THE 2 )CHARACTERISTICS OF #00 ELEMENTS WITH VARIOUS STRUCTURES SHOWED I THE
SHIFT IN THE 2 ) CURVE ORIGINATES FROM 0ELTIER COOLING IN THE #00 ELEMENTS
II THE COOLING POWER PER UNIT AREA OF THE #00 ELEMENTS ^ 7CMIS MUCH GREATER THAN THAT OF CONVENTIONAL THERMOELECTRIC MATERIALS^ 7CM  ;$/)  **!0,=+EYWORDS 0ELTIER EFFECT #00 '-2 #00 STRUCTURE METALLIC JUNCTIONSCURRENT INDUCED MAGNETIZATION REVERSAL
 .ANOELECTRONICS 2ESEARCH )NSTITUTE .ATIONAL )NSTITUTE OF !DVANCED )NDUSTRIAL 3CIENCE AND
4ECHNOLOGY !)34    5MEZONO 4SUKUBA )BARAKI   *APAN
 3EMICONDUCTOR 4ECHNOLOGY $EVELOPMENT 'ROUP 33.# 3ONY #ORP    !SAHI CHO !TSUGI+ANAGAWA   *APAN /SAKA 5NIVERSITY 'RADUATE 3CHOOL OF %NGINEERING 3CIENCE   -ACHIKANEYAMA 4OYONAKA/SAKA   *APAN
 #2%34 *APAN 3CIENCE AND 4ECHNOLOGY !GENCY *34    (ONCHO +AWAGUCHI 3AITAMA  *APAN*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   &EBRUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS-ATERIALS $ESIGN OF &ERROMAGNETIC $IAMOND+AZUHIDE +ENMOCHI +AZUNORI 3ATO !KIRA 9ANASE AND(IROSHI +ATAYAMA 9OSHIDA
2ECEIVED /CTOBER   ACCEPTED .OVEMBER   PUBLISHED $ECEMBER  

2ECEIVED /CTOBER   ACCEPTED .OVEMBER   PUBLISHED $ECEMBER  7E STUDIED THE ELECTRONIC AND MAGNETIC STATES OF A MONATOMIC BCC&E LAYER FACING A SINGLE CRYSTALLINE -G/ TUNNEL BARRIER BY US
ING 8 RAY ABSORPTION SPECTROSCOPY 8!3 AND 8 RAY MAGNETIC CIRCULAR DI
CHROISM 8-#$ AT THE &E ,  CORE EDGES IN ORDER TO CLARIFY THE ORIGIN OF
THE HUGE TUNNEL MAGNETORESISTANCE 4-2 EFFECT OBSERVED IN &E-G/&E
MAGNETIC TUNNEL JUNCTIONS "OTH THE 8!3 AND 8-#$ REVEALED THAT THE
 -, &E IS NOT OXIDIZED WHICH IS CRUCIAL TO THE HUGE 4-2 EFFECT ! SUM
RULE ANALYSIS OF THE 8-#$ SHOWS THAT THE  -, &E HAS AN EN
HANCED TOTAL MAGNETIC MOMENT OF ABOUT  «" PER &E ATOM COMPAREDWITH THAT OF BULK &E ;$/)  **!0,=+EYWORDS MONATOMIC BCC &E LAYER -G/ TUNNEL BARRIER&E-G/&E MAGNETIC TUNNEL JUNCTIONS 8 RAY ABSORPTIONSPECTROSCOPY 8!3 8 RAY MAGNETIC CIRCULAR DICHROISM
8-#$ EPITAXIAL GROWTH$EPARTMENT OF 0HYSICS 4OHO 5NIVERSITY &UNABASHI #HIBA   *APAN
 .ANO%LECTRONICS 2ESEARCH )NSTITUTE .ATIONAL )NSTITUTE OF !DVANCED )NDUSTRIAL 3CIENCE AND
4ECHNOLOGY !)34 4SUKUBA )BARAKI   *APAN
 0HOTON &ACTORY )-33 (IGH %NERGY !CCELERATOR 2ESEARCH /RGANIZATION 4SUKUBA )BARAKI  *APAN
 02%34/ *APAN 3CIENCE AND 4ECHNOLOGY !GENCY +AWAGUCHI 3AITAMA   *APAN% MAIL ADDRESS T KATAYAMA AISTGOJP

*3!0 )NTERNATIONAL .O *ULY 7E PROPOSE MATERIALS DESIGN OF FERROMAGNETIC DIAMOND WITHOUT ANY
TRANSITION METAL ELEMENTS BASED ON FIRST PRINCIPLES CALCULATIONS 4HE ELECTRONIC STRUCTURE AND THE MAGNETIC PROPERTIES OF IMPURITIES DOPED DIAMOND
ARE CALCULATED BY USING THE +ORRINGA +OHN 2OSTOKER METHOD WITHIN THE
LOCAL SPIN DENSITY APPROXIMATION WITH TAKING INTO ACCOUNT DISORDER USING COHERENT POTENTIAL APPROXIMATION )T IS FOUND THAT ( ATOMS WHICH ARE
DOPED INTO TETRAHEDRAL INTERSTITIAL SITES SHOW FINITE LOCAL MAGNETIC MO
MENTS -OREOVER THE IMPURITIES DOPED DIAMOND SHOW FERROMAGNETISM
WITH HALF METALLIC DENSITY OF STATES ;$/)  **!0,=+EYWORDS DIAMOND FERROMAGNETISM WITHOUT TRANSITION METAL ELEMENTS MATERIALS DESIGN AB INITIO CALCULATION
4HE )NSTITUTE OF 3CIENTIlC AND )NDUSTRIAL 2ESEARCH /SAKA 5NIVERSITY   -IHOGAOKA )BARAKI/SAKA   *APAN% MAIL ADDRESS KEN CMPSANKENOSAKA UACJP

!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   &EBRUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

0ROTEIN #RYOCRYSTALLOGRAPHY 5SING,ASER 0ROCESSED #RYSTAL

3ENSITIVITY #HARACTERISTICS OF 0OSITIVE AND.EGATIVE 2ESISTS AT  K6 %LECTRON "EAM
,ITHOGRAPHY(IROSHI +ITANO   (IROYOSHI -ATSUMURA  (IROAKI !DACHI  
3ATOSHI -URAKAMI   +AZUFUMI 4AKANO   4SUYOSHI )NOUE  
9USUKE -ORI   -ASAAKI $OI AND 4AKATOMO 3ASAKI  
2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED $ECEMBER  7E PROPOSE A NEW PROCEDURE IN BIOLOGICAL CRYOCRYSTALLOGRAPHY USING
THE LASER ABLATION TECHNIQUE 4HIS IS THE FIRST REPORT ON THE SUCCESSFUL PRO
CESSING OF CRYO COOLED CRYSTALS TO CREATE A hPROTEIN CRYSTAL BALLv THAT ISCONDUCIVE TO 8 RAY DIFFRACTION 82$ DATA COLLECTION 0ULSED 56 LASER SOFTABLATION 05,3! MODIFIES PROTEIN CRYSTALS INTO A SPHERICAL SHAPE AND REMOVES SURROUNDING MATERIALS BUT DOES NOT NEGATIVELY AFFECT CRYSTALLINITY
AND MAY IMPROVE DIFFRACTION DATA QUALITY !DDITIONALLY WE DEMONSTRATE
TREATMENT OF PROBLEMATIC SAMPLES TO MAKE THEM SERVICEABLE FOR 82$
ANALYSIS )SOLATION OF SINGLE CRYSTALS CAN BE PERFORMED AFTER FLASH COOLING
WITH THE 05,3! TECHNIQUE ;$/)  **!0,=+EYWORDS PROTEIN CRYSTAL CRYOCRYSTALLOGRAPHY LASER ABLATION 56
LASER 8 RAY DIFFRACTION STRUCTURAL ANALYSIS
 $EPARTMENT OF %LECTRICAL %NGINEERING /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN
 #ORE 4ECHNOLOGY #ENTER .IKON #ORPORATION    .ISHI /HI 3HINAGAWA KU 4OKYO  *APAN
 3/3(/ 0ROJECT #RYSTAL $ESIGN 0ROJECT /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN
 $EPARTMENT OF -ATERIALS #HEMISTRY /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN
 #ENTER FOR !DVANCED 3CIENCE AND )NNOVATION /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN
 $EPARTMENT OF #ELL -EMBRANE "IOLOGY )NSTITUTE OF 3CIENTIlC AND )NDUSTRIAL 2ESEARCH /SAKA
5NIVERSITY   -IHOGAOKA )BARAKI /SAKA   *APAN
 02%34/ *34   9AMADAOKA 3UITA /SAKA   *APAN
 $EPARTMENT OF -ATERIAL AND ,IFE 3CIENCE /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN*PN * !PPL 0HYS 6OL   PP , ,
0ART  .O   &EBRUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

3PIN 0OLARIZATION %FFECTS ON / $ISSOCIATIONFROM (EME / !DDUCT-UNEYUKI 4SUDA 7ILSON !GERICO $I×O    AND (IDEAKI +ASAI2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED $ECEMBER  7E CONSIDER SINGLET AND TRIPLET IRON PORPHYRIN / &E0 / ADDUCTS TO
INVESTIGATE SPIN POLARIZATION EFFECTS ON THE &E0 / INTERACTION USING AB

INITIO CALCULATIONS BASED ON DENSITY FUNCTIONAL THEORY $&4  4HE PRES
ENCE OF THE IMIDAZOLE )M LIGAND INDUCES SPIN POLARIZATION FROM / TO &E
IN THE TRIPLET )M &E0 / ADDUCT 4HE / / BOND OF THE TRIPLET )M &E0 /
IS WEAKER THAN THAT OF THE TRIPLET &E0 / BECAUSE OF THIS SPIN POLARIZATIONEFFECTS /UR RESULTS SUGGEST THAT MAGNETIZATION OF HEME OR HEME BASEDNANOMATERIALS MAY BE UTILIZED AS CATHODE ELECTRODE CATALYSTS IN POLYMERELECTROLYTE FUEL CELLS 0%&#S  ;$/)  **!0,=+EYWORDS POLYMER ELECTROLYTE FUEL CELL CATHODE ELECTRODE HEMOGLOBIN HEME &E PORPHYRIN IMIDAZOLE / SPIN POLARIZA
TION DENSITY FUNCTIONAL THEORY"YUNG 3UNG +IM (YO 3UNG ,EE *UNG 3UB 7I +YUNG "AE *IN AND+I "UM +IM
2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED $ECEMBER  4HE CONTRAST CURVE OF POSITIVE AND NEGATIVE ELECTRON BEAM RESISTSSUCH AS POLYMETHYLMETHACRYLATE 0--! :%0! AND HYDROGEN SILSESQUIOXANE (31 AT  K6 ELECTRON BEAM WAS ESTIMATED BY USING CONTIN
UOUS SLOW DOWN APPROXIMATION #3$! MODEL WITH BOTH NON RELATIVISTICAND RELATIVISTIC "ETHE STOPPING POWER %XPERIMENTAL RESULTS SHOW THATSIMPLE #3$! MODEL WELL EXPLAINS THE OVERALL RESPONSE OF THESE VARIOUS
ELECTRON BEAM RESISTS TO HIGH ENERGY ELECTRON BEAM ONLY IF WE USE THE
RELATIVISTIC "ETHE STOPPING POWER 4HE DIFFERENCE BETWEEN NON RELATIVISTICAND RELATIVISTIC "ETHE STOPPING POWER IS DISCUSSED;$/)  **!0,=+EYWORDS SENSITIVITY CHARACTERISTICS ELECTRON BEAM ENERGY  K6
ELECTRON BEAM LITHOGRAPHY RELATIVISTIC "ETHE STOPPING
POWER 0--! :%0! (313CHOOL OF -ATERIALS 3CIENCE AND %NGINEERING AND .ANO 3YSTEMS )NSTITUTE .ATIONAL #ORE 2ESEARCH#ENTER 3EOUL .ATIONAL 5NIVERSITY 3EOUL   +OREA% MAIL !DDRESS KIBUM SNUACKR*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

 -ILLIWATT 0ULSE /PERATION OF  NM !L'A.
,IGHT %MITTING $IODES
9URIY "ILENKO !LEX ,UNEV 8UHONG (U *IANYU $ENG 4HOMAS - +ATONA*IANPING :HANG 2EMIS 'ASKA -ICHAEL 3 3HUR 7ENHONG 3UN
6INOD !DIVARAHAN -AXIM 3HATALOV AND !SIF +HAN
2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED $ECEMBER  7E REPORT ON THE DEVELOPMENT OF SOLID STATE DEEP ULTRAVIOLET LIGHT
SOURCES OPTIMIZED FOR THE GERMICIDAL APPLICATIONS 0ULSED POWER LEVELSIN EXCESS OF  M7 WERE ACHIEVED FOR !L'A. BASED  NM LIGHT EMIT
TING DIODES BY IMPROVING THE MATERIAL QUALITY USING -IGRATION %NHANCED-ETAL /RGANIC #HEMICAL 6APOR $EPOSITION 0ACKAGED DEVICES REACHEDTHE CONTINUOUS WAVE POWER OF  «7 AT  M! AND A PULSE POWER EX
CEEDING  M7 FOR  ! DRIVING CURRENT ;$/)  **!0,=+EYWORDS DEEP 56 LIGHT EMITTING DIODES !L'A. MULTIPLE QUAN
TUM WELL -%-/#6$
3ENSOR %LECTRONIC 4ECHNOLOGY )NC  !TLAS 2D #OLUMBIA 3#  53!
 "ROADBAND #ENTER %#3% AND 0HYSICS 2ENSSELAER 0OLYTECHNIC )NSTITUTE 4ROY .9  53!
 $EPARTMENT OF %LECTRICAL %NGINEERING 5NIVERSITY OF 3OUTH #AROLINA #OLUMBIA 3# 
53!
% MAIL ADDRESS JP S ETCOM

 $EPARTMENT OF !PPLIED 0HYSICS /SAKA 5NIVERSITY 3UITA /SAKA   *APAN
 $EPARTMENT OF 0HYSICS /SAKA 5NIVERSITY 4OYONAKA /SAKA   *APAN
 #ENTER FOR THE 0ROMOTION OF 2ESEARCH ON .ANOSCIENCE AND .ANOTECHNOLOGY /SAKA 5NIVERSITY
4OYONAKA /SAKA   *APAN
 0HYSICS $EPARTMENT $E ,A 3ALLE 5NIVERSITY 4AFT !VE -ANILA  0HILIPPINES% MAIL ADDRESS KASAI DYNAPENGOSAKA UACJP*3!0 )NTERNATIONAL .O *ULY 

*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

 M7 3INGLE -ODE /UTPUT 0OWER OF!LL -ONOLITHIC  «M )N!L'A!S)N0 6ERTICAL#AVITY 3URFACE %MITTING ,ASERS 'ROWN BY-ETAL /RGANIC #HEMICAL 6APOR $EPOSITION(IGH #RITICAL #URRENT $ENSITY %PITAXIAL &ILMS OF
3M"A#U/ X IN (IGH &IELDS-I 2AN 0ARK / +YUN +WON "YUENG 3U 9OO +I (WANG ,EE(YUN 7OO 3ONG 7ON 3EOK (AN 3ANG (EE +O 0ARK *ONG (EE +IM AND
3EONG *OO 0ARK2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED $ECEMBER  7E PRESENT ALL MONOLITHIC )N!L'A!S)N0 VERTICAL CAVITY SURFACE EMIT
TING LASERS 6#3%,S EMITTING WAVELENGTH OF  «M GROWN BY METAL OR
GANIC CHEMICAL VAPOR DEPOSITION -/#6$  4HE DEVICES WITH TUNNEL JUNCTION 4* AND THE AIR GAP APERTURE SHOWED THE PERFORMANCES AS HIGH AS
OUTPUT POWER OF  M7 AND AS LOW AS THRESHOLD CURRENT OF  M! OP
ERATING IN SINGLE MODE AT ROOM TEMPERATURE 7E OBTAINED THE EMITTING
TRANSVERSE WAVELENGTH OF  NM WITH SIDE MODE SUPPRESSION RATIO
3-32 OF  D" THE CONTINUOUS WAVE #7 OPERATION OF TEMPERATURE
OVER ª# AND MODULATION BANDWIDTH EXCEEDING  'BITS;$/)  **!0,=+EYWORDS VERTICAL CAVITY SURFACE EMITTING LASER 6#3%, )N0)N!L'A!S METAL ORGANIC CHEMICAL VAPOR DEPOSITION
-/#6$ MONOLITHIC LONG WAVELENGTH"ASIC 2ESEARCH ,ABORATORY %LECTRONICS AND 4ELECOMMUNICATIONS 2ESEARCH )NSTITUTE  'AJEONG
DONG 9USEONG GU $AEJEON   +OREA
 2AY#AN #O ,TD  /UN DONG 9USEONG GU $AEJEON   +OREA% MAIL ADDRESS MIRANP ETRIREKR*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

0IEZOELECTRIC 7INDMILL
! .OVEL 3OLUTION TO 2EMOTE 3ENSING
3HASHANK 0RIYA#HIH 4A #HEN $ARREN &YE AND *EFF :AHND

2ECEIVED $ECEMBER   ACCEPTED $ECEMBER   PUBLISHED $ECEMBER  4HIS STUDY DEMONSTRATES A TECHNOLOGY h0IEZOELECTRIC 7INDMILLv FOR
GENERATING THE ELECTRICAL POWER FROM WIND ENERGY 4HE ELECTRIC POWER
GENERATION FROM WIND ENERGY IS BASED ON PIEZOELECTRIC EFFECT AND UTILIZESTHE BIMORPH ACTUATORS 0IEZOELECTRIC 7INDMILL CONSISTS OF PIEZOELECTRIC
ACTUATORS ARRANGED ALONG THE CIRCUMFERENCE OF THE MILL IN THE CANTILEVER
FORM 5SING THE CAMSHAFT GEAR MECHANISM AN OSCILLATING TORQUE IS GEN
ERATED THROUGH THE FLOWING WIND AND APPLIED ON THE ACTUATORS ! WORKING PROTOTYPE WAS FABRICATED UTILIZING  BIMORPHS      MM
HAVING A PRELOAD OF  GM 5NDER A NOMINAL TORQUE LEVEL CORRESPOND
ING TO NORMAL WIND FLOW AND OSCILLATING FREQUENCY OF  (Z A POWER OF M7 WAS SUCCESSFULLY MEASURED ACROSS A LOAD OF  K1 AFTER RECTIFICATION #OMBINED WITH THE WIRELESS TRANSMISSION THIS TECHNOLOGY PRO
VIDES A PRACTICAL SOLUTION TO THE REMOTE POWERING OF SENSORS AND COM
MUNICATION DEVICES ;$/)  **!0,=+EYWORDS PIEZOELECTRIC ENERGY HARVESTING BIMORPH WINDMILL
TRANSDUCER REMOTE SENSING-ATERIALS 3CIENCE AND %NGINEERING 5NIVERSITY OF 4EXAS AT !RLINGTON !RLINGTON 48  53!
 !0# 0RODUCTS 0LEASANT 'AP 0!  53!
!UTHOR FOR CORRESPONDENCE % MAIL ADDRESS SPRIYA UTAEDU*3!0 )NTERNATIONAL .O *ULY 9UTAKA 9OSHIDA  +ANAME -ATSUMOTO  9USUKE )CHINO -ASAKAZU )TOH  !TARU )CHINOSE  3HIGERU (ORII -ASASHI -UKAIDA  AND 9OSHIAKI 4AKAI2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED *ANUARY  4HE CRITICAL CURRENT DENSITY * C AND IRREVERSIBILITY FIELD " IRR OF EPITAXIAL
3M"A#U/ X 3M"#/ FILMS ARE REPORTED 4HE " IRR AND * C OF THESE FILMSDEPOSITED ON -G/ SUBSTRATES BY PULSED LASER DEPOSITION DEPENDCRITICALLY ON THE SUBSTRATE TEMPERATURE 4HE USE OF A THIN 3M"#/ SEEDLAYER GROWN AT A HIGH SUBSTRATE TEMPERATURE ENABLED US TO OBTAIN FULLYC AXIS ORIENTED 3M"#/ FILMS AT RELATIVELY LOW TEMPERATURES RESULTING IN A
HIGH * C OF    !CM OF "  C AT  4 AND  + 4HIS VALUE IS AS HIGH
AS THAT OF THE OPTIMIZED .B4I SUPERCONDUCTING WIRES ACHIEVED AT  4 AND
 + ;$/)  **!0,=+EYWORDS 3M"A#U/Y THIN FILM PULSED LASER DEPOSITION LOW TEMPERATURE GROWTH SUPERCONDUCTING PROPERTIES MICROSTRUCTURE
 $EPARTMENT OF %NERGY AND 3CIENCE .AGOYA 5NIVERSITY &URO CHO #HIKUSA KU .AGOYA  *APAN
 $EPARTMENT OF -ATERIALS 3CIENCE AND %NGINEERING +YOTO 5NIVERSITY 9OSHIDA HONMACHI
3AKYO KU +YOTO   *APAN
 %LECTRICAL 0HYSICS $EPARTMENT +OMAE 2ESEARCH ,ABORATORY #ENTRAL 2ESEARCH )NSTITUTE OF %LEC
TRIC 0OWER )NDUSTRY    )WATO KITA +OMAE 4OKYO   *APAN
 $EPARTMENT OF 3UPERCONDUCTIVITY 5NIVERSITY OF 4OKYO    (ONGO "UNKYO KU 4OKYO  *APAN
 $EPARTMENT OF %LECTRICAL AND )NFORMATION %NGINEERING 9AMAGATA 5NIVERSITY    *YONANCHO 9ONEZAWA 9AMAGATA   *APAN
 #2%34 *APAN 3CIENCE AND 4ECHNOLOGY !GENCY    (ONCHO +AWAGUCHI 3AITAMA  *APAN

*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

3ELECTIVE 2EMOVAL OF #ARBON .ANOTUBES
5TILIZING ,OW !CCELERATION 6OLTAGE %LECTRON)RRADIATION $AMAGE
3ATORU 3UZUKI  $AISUKE 4AKAGI 9OSHIKAZU (OMMA  AND
9OSHIHIRO +OBAYASHI 
2ECEIVED $ECEMBER   ACCEPTED $ECEMBER   PUBLISHED *ANUARY  ! SIMPLE METHOD FOR SPATIALLY SELECTIVE REMOVAL OF SINGLE WALLED CAR
BON NANOTUBES IS DEMONSTRATED 4HIS METHOD IS BASED ON LOW ACCELERATION VOLTAGE ELECTRON IRRADIATION DAMAGE AND CONSISTS OF LOCAL ELECTRONIRRADIATION OF NANOTUBES AND ANNEALING IN AIR 4HE IRRADIATION DAMAGE
SEEMS TO FOLLOW EXCITATION OF VALENCE ELECTRONS;$/)  **!0,=+EYWORDS NANOTUBE LOW ACCELERATION VOLTAGE ELECTRON ELECTRONIRRADIATION DAMAGE SELECTIVE REMOVAL .44 "ASIC 2ESEARCH ,ABORATORIES .IPPON 4ELEGRAPH AND 4ELEPHONE #ORPORATION !TSUGI+ANAGAWA   *APAN
 #2%34 *34 CO .44 "ASIC 2ESEARCH ,ABORATORIES .IPPON 4ELEGRAPH AND 4ELEPHONE #ORPORA
TION !TSUGI +ANAGAWA   *APAN
 #2%34 *34 CO $EPARTMENT OF 0HYSICS 4OKYO 5NIVERSITY OF 3CIENCE 3HINJUKU KU 4OKYO  *APAN
 $EPARTMENT OF 0HYSICS 4OKYO 5NIVERSITY OF 3CIENCE 3HINJUKU KU 4OKYO   *APAN% MAIL ADDRESS SSUZUKI WILLBRLNTTCOJP

!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS$EMONSTRATION OF .ONPOLAR M 0LANE)N'A.'A. ,IGHT %MITTING $IODES ON&REE 3TANDING M 0LANE 'A. 3UBSTRATES3UBWAVELENGTH 2ESOLUTION 2AMAN -ICROSCOPY
OF 3I 3TRUCTURES 5SING -ETAL 0ARTICLE 4OPPED!&- 0ROBE!RPAN #HAKRABORTY "ENJAMIN ! (ASKELL 3TACIA +ELLER *AMES 3 3PECK3TEVEN 0 $ENBAARS 3HUJI .AKAMURA AND 5MESH + -ISHRA

6LADIMIR 0OBORCHII

4ETSUYA 4ADA AND 4OSHIHIKO +ANAYAMA2ECEIVED $ECEMBER   ACCEPTED $ECEMBER   PUBLISHED *ANUARY  

2ECEIVED .OVEMBER   ACCEPTED $ECEMBER   PUBLISHED *ANUARY  7E REPORT THE FABRICATION OF NONPOLAR M PLANE )N'A.'A. MULTIPLE
QUANTUM WELL LIGHT EMITTING DIODES ,%$S ON FREE STANDING M PLANE'A. SUBSTRATES /N WAFER CONTINUOUS WAVE OUTPUT POWER OF  «7
WAS MEASURED AT  M! FOR A   «M DEVICE AND OUTPUT POWER
AS HIGH AS  M7 WAS MEASURED AT  M! 4HERE WAS NO SIGN OF SATURATION OF THE OUTPUT POWER AT HIGH DRIVE CURRENTS !N EMISSION PEAK AT
 NM WAS OBTAINED ON ELECTROLUMINESCENCE MEASUREMENTS WITH HIGH
DRIVE CURRENTS 4HE CURRENT VOLTAGE CHARACTERISTICS OF THESE ,%$S SHOWEDRECTIFYING BEHAVIOR WITH A TURN ON VOLTAGE OF   6;$/)  **!0,=+EYWORDS .ONPOLAR M PLANE )N'A. LIGHT EMITTING DIODE FREE
STANDING ELECTROLUMINESCENCE%LECTRICAL AND #OMPUTER %NGINEERING AND -ATERIALS $EPARTMENTS 5NIVERSITY OF #ALIFORNIA 3ANTA"ARBARA #ALIFORNIA  53!
 %2!4/ *34 5#3" 'ROUP 5NIVERSITY OF #ALIFORNIA 3ANTA "ARBARA #ALIFORNIA  53!
% MAIL ADDRESS MISHRA ECEUCSBEDU*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS%TCHING A -ICRO 4RENCH WITH A -AXIMUM!SPECT 2ATIO OF  ON 3ILICA 'LASS BY,ASER )NDUCED "ACKSIDE 7ET %TCHING ,)"7%
9OSHIZO +AWAGUCHI(IROYUKI .IINO

4ADATAKE 3ATO !IKO .ARAZAKI 2YOZO +UROSAKI AND

2ECEIVED $ECEMBER   ACCEPTED $ECEMBER   PUBLISHED *ANUARY  7E HAVE SUCCESSFULLY FABRICATED A DEEP MICRO TRENCH ABOUT  «M
WIDE AND  «M DEEP ON SILICA GLASS WITH A MAXIMUM ASPECT RATIO OF BY LASER INDUCED BACKSIDE WET ETCHING ,)"7% VIA +R& LASER ABLA
TION OF A SATURATED PYRENEACETONE SOLUTION 4HE PROCESSING TIME FOR THE
MICROETCHING WAS AS SHORT AS  MIN AT A REPETITION RATE OF  (Z AND A
FLUENCE OF &   *qCM qPULSE  4HE ETCH RATE WAS CALCULATED TO BE AP
PROXIMATELY  NMqPULSE  4HE ,)"7% METHOD IS SHOWN TO BE VERY USE
FUL FOR SURFACE MICROSTRUCTURING OF SILICA GLASS WITH HIGH ASPECT RATIO AND
HIGH THROUGHPUT ;$/)  **!0,=+EYWORDS LASER INDUCED BACKSIDE WET ETCHING ,)"7% MICROETCHING MICROFABRICATION SILICA GLASS HIGH ASPECT RATIO MICROTRENCH PYRENEACETONE SOLUTION +R& EXCIMER LASER
0HOTONICS 2ESEARCH )NSTITUTE .ATIONAL )NSTITUTE OF !DVANCED )NDUSTRIAL 3CIENCE AND 4ECHNOLOGY!)34 #ENTRAL     (IGASHI 4SUKUBA )BARAKI   *APAN% MAIL ADDRESS Y KAWAGUCHI AISTGOJP

5SING DEPOLARIZATION OF THE  NM LIGHT SCATTERED BY A SMALL PARTI
CLE ON THE  3I SURFACE ONE CAN OBTAIN ALLOWED  CMn 2AMAN SIG
NAL FROM THE LOCALIZED AREA OF 3I AROUND THE PARTICLE WHILE THE ORDINARY
2AMAN SIGNAL IS FORBIDDEN BY THE POLARIZATION SELECTION RULES 7E HAVEREALIZED THIS SCHEME USING !G PARTICLE TOPPED QUARTZ ATOMIC FORCE MICROSCOPE !&- PROBE IMMERSED INTO GLYCEROL DROPLET ON 3I SURFACE AND
APPLIED TO LOCAL STRESS MEASUREMENT ,ATERAL RESOLUTION IN THE RANGE OF
 NM WAS DEMONSTRATED AND STRESS VARIATION IN A STRAINED 3I FILM WAS
INVESTIGATED ;$/)  **!0,=+EYWORDS SILICON STRESS 2AMAN MICROSCOPY SUBWAVELENGTH RESOLUTION ATOMIC FORCE MICROSCOPY POLARIZATION OF LIGHT-)2!) !DVANCED 3EMICONDUCTOR 2ESEARCH #ENTER .ATIONAL )NSTITUTE OF !DVANCED )NDUSTRIAL 3CI
ENCE AND 4ECHNOLOGY !)34 4SUKUBA #ENTRAL  (IGASHI 4SUKUBA   *APAN/N LEAVE FROM )OFFE 0HYSICO 4ECHNICAL )NSTITUTE 3T 0ETERSBURG 2USSIA% MAIL ADDRESS 6LADIMIRP AISTGOJP*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

3UPERCRITICAL )MPROVEMENT OF 2ESIST 0ATTERNS
BY )NTRODUCING &UNCTIONAL -OLECULES(IDEO .AMATSU AND -ITSURU 3ATO
2ECEIVED $ECEMBER   ACCEPTED *ANUARY   PUBLISHED *ANUARY  ! NEW PERFORMANCE ENHANCEMENT TECHNIQUE FOR RESISTS HAS BEEN
DEVELOPED THAT INVOLVES THE USE OF SUPERCRITICAL FLUID AND FUNCTIONAL MOL
ECULES "ECAUSE IT IS AN EXCELLENT SOLVENT THE SUPERCRITICAL FLUID DISSOLVESTHE MOLECULES WHICH PROVIDE FUNCTIONS ORIGINALLY LACKING IN THE RESISTMATERIAL AND THE GOOD DIFFUSIVITY OF SUPERCRITICAL FLUID DISTRIBUTES THE
MOLECULES THROUGHOUT THE RESIST 4HUS FUNCTIONS CAN BE ADDED TO A RESISTWITHOUT DEGRADING ITS SENSITIVITY OR DEVELOPMENT CHARACTERISTICS BECAUSE
THE PROCESS IS PERFORMED AFTER EXPOSURE AND DEVELOPMENT &URTHERMORESINCE THE MOLECULES ARE DISPERSED UNIFORMLY THERE IS NO CHANGE IN THE
LINE WIDTH OF RESIST PATTERNS 4HIS ADVANCED TECHNIQUE FOR IMPROVING RESISTS USING SUPERCRITICAL FLUID HAS GREAT POTENTIAL TO CHANGE THE CURRENTCONCEPT OF RESIST PROCESSES+EYWORDS SUPERCRITICAL FLUID RESIST IMPROVEMENT FUNCTIONAL MOL
ECULE !R& RESIST.44 "ASIC 2ESEARCH ,ABORATORIES .44 #O   -ORINOSATO 7AKAMIYA !TSUGI SHI +ANAGAWA
  *APAN
 4OKYO /HKA +OGYO #O ,TD  4ABATA 3AMUKAWA MACHI +OZA GUN +ANAGAWA
  *APAN*3!0 )NTERNATIONAL .O *ULY 

*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS&ABRICATION AND #HARACTERIZATION OF)N. "ASED 1UANTUM 7ELL 3TRUCTURES 'ROWN
BY 2ADIO &REQUENCY 0LASMA !SSISTED-OLECULAR "EAM %PITAXY#ENTER 7AVELENGTH 3HIFTED 0ASSIVELY-ODE ,OCKED $IODE 0UMPED 9TTERBIUM9B 
9TTRIUM !LUMINUM 'ARNET9!' ,ASER-ASAHITO +UROUCHI (IROYUKI .AOI 4SUTOMU !RAKI 4AKAO -IYAJIMA AND
9ASUSHI .ANISHI
2ECEIVED *ANUARY   ACCEPTED *ANUARY   PUBLISHED *ANUARY  )N.)NX 'A X . QUANTUM WELL STRUCTURES HAVE BEEN SUCCESSFULLY FABRICATED ON )N. TEMPLATES GROWN ON     SAPPHIRE SUBSTRATES BY 2&
PLASMA ASSISTED MOLECULAR BEAM EPITAXY FOR THE FIRST TIME 4HE STRUCTURE
WAS CONFIRMED BY OBSERVING THE ST AND ND SATELLITE PEAKS OF 8 RAY DIF
FRACTION &ROM )N.)N'A. SINGLE QUANTUM WELL STRUCTURES WITH THE
DIFFERENT WELL WIDTHS OF   AND  NM PHOTOLUMINESCENCE 0,
EMISSION FROM THE WELL LAYERS WAS OBSERVED AT  + AND THE 0, PEAK ENERGY SLIGHTLY LOWERED WITH INCREASING WELL WIDTH 4HIS DEPENDENCE CAN
BE EXPLAINED BY COMBINED EFFECTS OF THE QUANTUM SIZE EFFECT QUANTUMCONFINEMENT 3TARK EFFECT AND BAND FILLING EFFECT;$/)  **!0,=+EYWORDS )N. )N RICH )NX'A X. QUANTUM WELL OPTICAL PROPERTY
8 RAY DIFFRACTION 2& -"%$EPARTMENT OF 0HOTONICS &ACULTY OF 3CIENCE AND %NGINEERING 2ITSUMEIKAN 5NIVERSITY   .OJI (IGASHI +USATSU 3HIGA   *APAN
 #ENTER FOR 0ROMOTION OF THE #/% 0ROGRAM 2ITSUMEIKAN 5NIVERSITY    .OJI (IGASHI+USATSU 3HIGA   *APAN
 /PTOELECTRONICS ,ABORATORY -ATERIALS ,ABORATORIES 3ONY #ORPORATION    !SAHI !TSUGI+ANAGAWA   *APAN*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   *ANUARY ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS! 0D #U .I 4ERNARY !LLOYED -EMBRANE ON
0OROUS .ICKEL 3UPPORT 0REPARED BY 3PUTTERING
AND #OPPER 2EFLOW$ONG 7ON +IM +I 9OUN 5M (EUNG 'U +IM )N 3EON ,EE3ANG (O +IM *ONG 3OO 0ARK 3HIN +UN 2YI AND 3UNG (O #HO
2ECEIVED $ECEMBER   ACCEPTED *ANUARY   PUBLISHED *ANUARY  7E PROPOSE A TERNARY 0D #U .I ALLOYED MEMBRANE ON POROUS NICKELSUPPORT THAT DRAMATICALLY ENHANCES THE HYDROGEN SELECTIVITY BY USINGSPUTTERING AND COPPER REFLOW 0OROUS NICKEL SUPPORT MADE BY SINTERINGSHOWS STRONG RESISTANCE TO HYDROGEN EMBRITTLEMENT AND THERMAL FATIGUE
4O IMPROVE THE HYDROGEN SELECTIVITY OF THE MEMBRANE FABRICATED THE
LAYER SEQUENCE OF #U0D.I ON POROUS NICKEL SUPPORT REPLACED THAT OFCONVENTIONAL 0D#U.I AND THEN REFLOW WAS PERFORMED AT ª# #ONSE
QUENTLY COPPER WAS REFLOWED UNILATERALLY INTO 0D.I LAYER THEREBY AVOIDING DELAMINATION BY THE INTERLAYERED COPPER AND ENABLING INFINITE HYDROGEN SELECTIVITY BECAUSE OF EXTREMELY DENSE COATINGS;$/)  **!0,=+EYWORDS POROUS NICKEL SUPPORT HYDROGEN SELECTIVITY 0D ALLOYEDCOATINGS 0D #U .I TERNARY ALLOYED MEMBRANE COPPER
REFLOW PLASMA SURFACE MODIFICATION$EPARTMENT OF !DVANCED -ATERIALS %NGINEERING +YONGGI 5NIVERSITY 3UWON 'YEONGGI $O
  2EPUBLIC +OREA
 $EPARTMENT OF -ATERIALS %NGINEERING +OREA 5NIVERSITY OF 4ECHNOLOGY AND %DUCATION#HEONAN #ITY #HUNGNAM   2EPUBLIC +OREA
 +OREA )NSTITUTE OF %NERGY 2ESEARCH 9USONG +U $AEJON   2EPUBLIC +OREA
 $EPARTMENT OF #HEMICAL AND "IOLOGICAL %NGINEERING +OREA 5NIVERSITY  KA !NAM $ONG
3UNGBUK KU 3EOUL   2EPUBLIC +OREA% MAIL ADDRESS DWKIM KYONGGIACKR

*3!0 )NTERNATIONAL .O *ULY 3ADAO 5EMURA AND +ENJI 4ORIZUKA2ECEIVED &EBRUARY   ACCEPTED &EBRUARY   PUBLISHED -ARCH  7E GENERATE  FS PULSES FROM A PASSIVELY MODE LOCKED DIODE
PUMPED YTTERBIUM9B YTTRIUM ALUMINUM GARNET9!' LASER 4HIS IS TOOUR KNOWLEDGE THE SHORTEST PULSE FROM A 9B9!' LASER 7E SHIFT THE
LASER CENTER WAVELENGTH FROM THE COMMONLY USED  NM TO AROUND
 NM TO UTILIZE THE 9B9!' SPECTRUM BROADER
;$/)  **!0,=+EYWORDS 9B9!' PASSIVELY MODE LOCKED DIODE PUMPED 3%3!0HOTONICS 2ESEARCH )NSTITUTE .ATIONAL )NSTITUTE OF !DVANCED )NDUSTRIAL 3CIENCE AND 4ECHNOLOGY!)34 #ENTRAL     5MEZONO 4SUKUBA )BARAKI   *APAN*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

3I .ANO 0HOTODIODE WITH A 3URFACE 0LASMON!NTENNA
4SUTOMU )SHI *UNICHI &UJIKATA +IKUO -AKITA 4OSHIO "ABA AND+EISHI /HASHI
2ECEIVED *ANUARY   ACCEPTED &EBRUARY   PUBLISHED -ARCH  .ANO PHOTODIODES WITH A SUBWAVELENGTH ACTIVE AREA USING THE OP
TICAL NEAR FIELD ENHANCED BY SURFACE PLASMON RESONANCE ARE PROPOSED7E FABRICATED A 3I 3CHOTTKY PHOTODIODE THAT CONSISTS OF AN ACTIVE AREA OF
 NM IN DIAMETER AND A SURFACE PLASMON ANTENNA TO GENERATE THE CARRIER WITHIN THE ACTIVE AREA EFFICIENTLY 4HE FABRICATED PHOTODIODE SHOWSAN INCREASE OF THE PHOTOCURRENT BY SEVERAL TENFOLD COMPARED TO THATWITHOUT A SURFACE PLASMON ANTENNA 4HIS RESULT SUGGESTS AN ENHANCED
PHOTOGENERATION OF CARRIERS IN A SEMICONDUCTOR VIA SURFACE PLASMON RESONANCE 3UCH A 3I NANO PHOTODIODE IS A POTENTIAL HIGH SPEED OPTICAL SIG
NAL DETECTOR BECAUSE THE OPTO ELECTRONIC CONVERSION PROCESS OCCURS WITH
IN A SUBWAVELENGTH SCALE ;$/)  **!0,=+EYWORDS PHOTODIODE SUBWAVELENGTH APERTURE OPTICAL NEAR FIELD
SURFACE PLASMON&UNDAMENTAL AND %NVIRONMENTAL 2ESEARCH ,ABORATORIES .%# #ORPORATION  -IYUKIGAOKA
4SUKUBA )BARAKI   *APAN
 3YSTEM $EVICES 2ESEARCH ,ABORATORIES .%# #ORPORATION   3EIRAN  CHOME /TSU 3HIGA  *APAN

!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS%PITAXIAL ,ATERAL /VERGROWTH OF (IGH !L#OMPOSITION !L'A. !LLOYS ON $EEP 'ROOVED
3I# 3UBSTRATES

0RODUCTION OF 3HORT ,IVED 0OSITRON %MITTING
2ADIOACTIVE .UCLEI 5SING A  47
 FS 4ABLETOP ,ASER

3TEN (EIKMAN 3TACIA +ELLER 3COTT .EWMAN 9UAN 7U #RAIG -OE"RENDAN -ORAN -ATHEW 3CHMIDT 5MESH + -ISHRA *AMES 3 3PECKAND 3TEVEN 0 $EN"AARS(IRONORI 4AKAHASHI  3HIN ICHIRO /KIHARA -ASATOSHI &UJIMOTO 
3HINJI /HSUKA  +OJI -ATSUKADO 3HIGETOSHI /KAZAKI 4OSHIAKI )TO
3HIN ICHIRO !OSHIMA  AND 9UTAKA 4SUCHIYA 

2ECEIVED &EBRUARY   ACCEPTED &EBRUARY   PUBLISHED -ARCH  

2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED -ARCH  &ULLY COALESCED !L'A. FILMS WERE DEMONSTRATED BY METALORGANIC CHEMICAL VAPOR DEPOSITION ON DEEP GROOVED 3I# SUBSTRATES ,AT
ERAL !L'A. GROWTH WAS ACHIEVED AT LOW 6))) RATIOS DURING GROWTH
4HE DEEP GROOVES ENABLED COALESCENCE DESPITE OF PARASITIC GROWTH IN
THE TRENCHES $ISLOCATION REDUCTION IN THE OVERGROWN REGIONS OF THE FILMSWAS OBSERVED BY TRANSITION ELECTRON MICROSCOPY AND ATOMIC FORCE MICROSCOPY ;$/)  **!0,=+EYWORDS ALUMINUM NITRIDE ALUMINUM GALLIUM NITRIDE METALORGANIC CHEMICAL VAPOR DEPOSITION EPITAXIAL LATERAL OVERGROWTH TRANSMISSION ELECTRON MICROSCOPY THREADING DISLOCATIONS

7E PRODUCED A SHORT LIVED POSITRON EMITTING RADIOISOTOPE . BY US
ING -E6 ORDER DEUTERONS EMITTED FROM RELATIVISTIC LASER PLASMA GENERATED BY A TABLETOP LASER &OR GENERATION OF THE PLASMA LASER PULSES WITH A
PEAK POWER OF  47 AND A PULSE DURATION OF  FS WERE FOCUSED WITH
A  (Z REPETITION RATE ONTO A MICROPOROUS POLYTETRAFLUOROETHYLENE FILM
LOADED WITH DEUTERATED POLYSTYRENE WHERE THE MAXIMUM INTENSITY AT
THE FOCAL POINT WAS    7CM 4HE IRRADIATION OF MELAMINE RESINSBY DEUTERONS FOR  S PRODUCED . OF  ¢  "Q THROUGH A NUCLEAR
REACTION OF #D N . 4HIS IS THE FIRST REPORT ON AN ACTUAL ACTIVATION US
ING A TABLE SIZED FEMTOSECOND LASER ; $/)  **!0,=+EYWORDS TERAWATT LASER FEMTOSECOND LASER PULSE NUCLEAR REACTIONPOSITRON EMITTING RADIOISOTOPE ENERGETIC DEUTERON GEN
ERATION RELATIVISTIC LASER PLASMA MICROPOROUS POLYTETRAFLUOROETHYLENE FILM DEUTERATED POLYSTYRENE MELAMINERESIN%LECTRICAL  #OMPUTER %NGINEERING AND -ATERIALS $EPARTMENTS 5NIVERSITY OF #ALIFORNIA 3ANTA"ARBARA #!  53!
% MAIL ADDRESS STEN ECEUCSBEDU*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

 NM 56 ,IGHT 'ENERATION IN (IGH 1UALITY#S"/ &ABRICATED BY 0OST 'ROWTH (EAT
4REATMENT
4AKASHI 3AJI -ASASHI 9OSHIMURA .AOTO (ISAMINATO 9USUKE -ORI
4AKATOMO 3ASAKI 4OMOKI +ATSURA 4ETSUO +OJIMA AND *UNICHI .ISHIMAE
2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED -ARCH  #ESIUM TRIBORATE #S"/ IS EXPECTED TO BE AN EFFICIENT HARMONICGENERATOR IN THE 56 REGION (OWEVER AS GROWN SINGLE CRYSTALS OF #S"/
OFTEN CONTAIN A HIGH DENSITY OF OPTICAL SCATTERING CENTERS THAT SIGNIFICANTLY REDUCE DEVICE PERFORMANCE 7E FOUND THAT THESE CAN BE REMOVED BY
A POST GROWTH HEAT TREATMENT WITH QUENCHING 4REATED CRYSTALS WERE EM
PLOYED FOR THE THIRD HARMONIC GENERATION OF A HIGH POWER .D9!' LASEROPERATING AT  NM 7E GENERATED HIGH POWER  NM OUTPUT POWER
OF  7 WHICH IS THREE TIMES HIGHER THAN THAT OBTAINED BY A COMMERCIAL,I"/ CRYSTAL UNDER THE SAME EXPERIMENTAL CONDITIONS;$/)  **!0,=+EYWORDS CESIUM BORATE #S"/ #"/ NONLINEAR OPTICS CRYSTALGROWTH SCATTERING CENTER HEAT TREATMENT QUENCHING
THIRD HARMONIC GENERATION 4('
$EPARTMENT OF %LECTRICAL %NGINEERING /SAKA 5NIVERSITY   9AMADAOKA 3UITA /SAKA  *APAN
 !DVANCED 4ECHNOLOGY 2$ #ENTER -ITSUBISHI %LECTRIC #ORPORATION    4SUKAGUCHI(ONMACHI !MAGASAKI (YOGO   *APAN% MAIL ADDRESS YOSHI PWRENGOSAKA UACJP

 #2%!4% 3HIZUOKA OF *34 2%&/34  (IRAKUCHI (AMAKITA CITY   *APAN
 #ENTRAL 2ESEARCH ,ABORATORY (AMAMATSU 0HOTONICS ++  (IRAKUCHI (AMAKITA CITY  *APAN% MAIL ADDRESS HIRONORI CRLHPKCOJP*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS.ANOHOLES IN )N0 AND # ,AYERS ON 'A!S3UBSTRATES BY 5SING !L'A!S .ANOWIRE
4EMPLATES+OUTA 4ATENO(IDEKI 'OTOH AND 9OSHIO 7ATANABE

2ECEIVED &EBRUARY   ACCEPTED -ARCH   PUBLISHED -ARCH  !S ONE OF THE NANO SCALE FABRICATION TECHNIQUES FREE STANDING
NANOWIRES ARE PROMISING 7E HAVE DEVELOPED A NEW METHOD FOR NANO
HOLE FABRICATION USING NANOWIRE TEMPLATES THAT IS ETCHING THE EXPOSEDWIRES SELECTIVELY AFTER THE LAYER GROWTH 7E HAVE DEMONSTRATED NANO
HOLED ARRAY IN )N0 AND # LAYERS ON 'A!S SUBSTRATES &OR THE METALORGANIC VAPOR PHASE EPITAXY OF )N0  " FACETS TEND TO FORM SO THAT THE!L'A!S NANOWIRES ARE EASILY REMOVED 4ILTED NANOWIRES AND NANOHOLES
ARE POSSIBLE BY USING  " SUBSTRATES !S ANOTHER HOLED LAYER CASE A# LAYER WAS TRIED 7E FOUND THAT THIS METHOD CAN ALSO BE APPLIED TO
THE FRAGILE MATERIAL LIKE # ;$/)  **!0,=+EYWORDS NANOWIRE NANOHOLE !L'A!S )N0 # SCANNING ELECTRONMICROSCOPE.44 "ASIC 2ESEARCH ,ABORATORIES .44 #ORPORATION !TSUGI SHI +ANAGAWA   *APAN
 .44 !DVANCED 4ECHNOLOGY #ORPORATION !TSUGI SHI +ANAGAWA   *APAN% MAIL ADDRESS KTATENO WILLBRLNTTCOJP*3!0 )NTERNATIONAL .O *ULY 

*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   -ARCH ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS-O/ (OLLOW &IBER WITH 2ECTANGULAR #ROSS
3ECTIONS!LIGNMENT &REE 4OP #ONTACT &ORMATION
FOR /RGANIC 4HIN &ILM 4RANSISTORS WITH
3UBMICRON ,ENGTH #HANNEL-AKI 3UEMITSU 4OSHIMI !BE (YOUNG *UN .A AND (ISANORI 9AMANE
2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED -ARCH  -OLYBDENUM OXIDE HOLLOW FIBER WITH RECTANGULAR CROSS SECTIONS HAS
BEEN DISCOVERED 4HE FIBERS GROW ON A -O SUBSTRATE HEATED WITH AN
ACETYLENE OXYGEN COMBUSTION FLAME FROM THE BACKSIDE 4HE EDGE LENGTH
OF THE CROSS SECTIONAL RECTANGLE RANGES FROM ^ TO  «M 4HE MATERIAL AS DETERMINED FROM THE 8 RAY PHOTOELECTRON SPECTROSCOPY AND 8 RAY
DIFFRACTION IS OF MONOCLINIC -O/ ;$/)  **!0,=+EYWORDS MONOCLINIC MOLYBDENUM DIOXIDE MOLYBDENUM OXIDEHOLLOW FIBER RECTANGULAR CROSS SECTION METALLIC METALOXIDE ACETYLENE OXYGEN COMBUSTION FLAME#ENTER FOR )NTERDISCIPLINARY 2ESEARCH 4OHOKU 5NIVERSITY !RAMAKI AZA !OBA !OBA KU 3ENDAI  *APAN
 $EPARTMENT OF %LECTRONICS 4OHOKU )NSTITUTE OF 4ECHNOLOGY   9AGIYAMA +ASUMI CHO
4AIHAKU KU 3ENDAI   *APAN*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS!L'A.'A. (ETEROSTRUCTURE &IELD %FFECT
4RANSISTORS WITH #URRENT 'AIN #UT OFF&REQUENCY OF  '(Z ON 3APPHIRE 3UBSTRATES-ASATAKA (IGASHIWAKI AND 4OSHIAKI -ATSUI2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED !PRIL  !L'A.'A. HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (&%4S WITH A
GATE LENGTH , ' OF   NM WERE FABRICATED ON A SAPPHIRE SUBSTRATE
4HE (&%4 STRUCTURE WAS GROWN BY PLASMA ASSISTED MOLECULAR BEAM EPITAXY AND A  NM THICK 3I. FILM WAS FORMED ON THE DEVICE SURFACE BY
CATALYTIC CHEMICAL VAPOR DEPOSITION !LL OF THE (&%4S SHOWED OUTSTANDING$# DEVICE PERFORMANCE 4HEY EXHIBITED MAXIMUM DRAIN CURRENT DENSITIESOF   !MM AND EXTRINSIC TRANSCONDUCTANCES OF   M3MM
4HE  NM GATE (&%4 HAD A CURRENT GAIN CUT OFF FREQUENCY F 4 OF '(Z AND A MAXIMUM OSCILLATION FREQUENCY F MAX OF  '(Z 4O OURKNOWLEDGE THE F 4 AND F MAX ARE THE HIGHEST EVER REPORTED FOR 'A. BASED
TRANSISTORS 4HESE SUPERIOR HIGH FREQUENCY CHARACTERISTICS WERE ACHIEVED
WITH A PROCESS USING A THIN AND HIGH !L CONTENT BARRIER LAYER HIGH QUALITY CATALYTIC CHEMICAL VAPOR DEPOSITION #AT #6$ 3I. PASSIVATION AND
SUB  «M GATES DEFINED BY ELECTRON BEAM LITHOGRAPHY;$/)  **!0,=+EYWORDS !L'A. 'A. HETEROSTRUCTURE FIELD EFFECT TRANSISTOR
(&%4 SAPPHIRE PLASMA ASSISTED MOLECULAR BEAM EPITAXY
0!-"% CATALYTIC CHEMICAL VAPOR DEPOSITION #AT #6$
CURRENT GAIN CUT OFF FREQUENCY F 4 MAXIMUM OSCILLATIONFREQUENCY FMAX.ATIONAL )NSTITUTE OF )NFORMATION AND #OMMUNICATIONS 4ECHNOLOGY    .UKUI KITA +OGANEI4OKYO   *APAN% MAIL ADDRESS MHIGASHI NICTGOJP

*3!0 )NTERNATIONAL .O *ULY )WAO 9AGI +UNJI 3HIGETO +AZUHITO 4SUKAGOSHI  AND
9OSHINOBU !OYAGI 
2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED !PRIL  7E PROPOSE A SIMPLE FABRICATION METHOD FOR SELF ALIGNED TOP CONTACTS FOR AN ORGANIC THIN FILM TRANSISTOR 4&4 THAT CAN BE MINIATURIZED4HE SELF ALIGNED TOP ELECTRODES ARE FORMED WITHOUT ANY BREAK IN THE
VACUUM CONDITION AFTER THE FORMATION OF AN ORGANIC CHANNEL ON THE SUBSTRATE WITH A PREFABRICATED INSULATING STRUCTURE !S A DEMONSTRATION OF
THIS METHOD PENTACENE 4&4S WITH SUBMICRON LENGTH CHANNELS HAVE BEEN
FABRICATED AND SUCCESSFULLY OPERATED 3CANNING ELECTRON MICROSCOPY OF
4&4S REVEALS WELL DEFINED 4&4 STRUCTURES AS EXPECTED;$/)  **!0,=+EYWORDS ORGANIC THIN FILM TRANSISTOR PENTACENE TOP CONTACTALIGNMENT FREE FABRICATION SUBMICRON LENGTH CHANNEL 2)+%.   (IROSAWA 7AKO 3AITAMA   *APAN
 02%34/ *34    (ONCHO +AWAGUCHI 3AITAMA   *APAN
 $EPARTMENT OF )NFORMATION 0ROCESSING 4OKYO )NSTITUTE OF 4ECHNOLOGY  .AGATUDA CHO-IDORI KU 9OKOHAMA +ANAGAWA   *APAN*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

3INGLE 7ALLED #ARBON .ANOTUBE 4HIN &ILM
3ENSOR FOR 5LTRASENSITIVE 'AS $ETECTIO
7INADDA 7ONGWIRIYAPAN 3HIN ICHI (ONDA (IROFUMI +ONISHI
4OMOAKI -IZUTA 4AKASHI )KUNO 4ATSUYA )TO 4ORU -AEKAWA+ENGO 3UZUKI (IROSHI )SHIKAWA +ENJIRO /URA AND-ITSUHIRO +ATAYAMA2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED !PRIL  7E DEMONSTRATED A GAS SENSOR FABRICATED BY GROWING A SINGLE
WALLED CARBON NANOTUBE 37.4 THIN FILM DIRECTLY ON A CONVENTIONAL SENSOR SUBSTRATE ./ AND #L WERE DETECTED DOWN TO THE PPB LEVEL UNDERROOM TEMPERATURE OPERATION WITH A FAST RESPONSE 5SING AN ELECTRICAL
BREAKDOWN TECHNIQUE GAS RESPONSE SENSITIVITY WAS IMPROVED BY AN ORDER
OF MAGNITUDE 4HE RELATIONSHIP BETWEEN GAS CONCENTRATION AND SENSORRESPONSE WAS DERIVED BASED ON THE ,ANGMUIR ADSORPTION ISOTHERM PRE
DICTING A DETECTION LIMIT OF  PPB FOR ./ 4HE 37.4 THIN FILM GAS SENSOR EXHIBITS MERITS OVER OTHER TYPES OF SENSORS BY VIRTUE OF ITS SIMPLICITY IN
FABRICATION AND FEASIBLE APPLICATION ;$/)  **!0,=+EYWORDS SINGLE WALLED CARBON NANOTUBE GAS SENSOR CHEMICAL VAPOUR DEPOSITION ELECTRICAL BREAKDOWN ,ANGMUIRADSORPTION ISOTHERM$EPARTMENT OF %LECTRONIC %NGINEERING 'RADUATE 3CHOOL OF %NGINEERING /SAKA 5NIVERSITY  
9AMADA OKA 3UITA /SAKA   *APAN
 .EW #OSMOS %LECTRIC #O ,TD    -ITSUYA NAKA 9ODOGAWA +U /SAKA   *APAN#ORRESPONDING AUTHOR % MAIL ADDRESS KATAYAMA ELEENGOSAKA UACJP

!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS-ILLIWATT 0OWER $EEP 5LTRAVIOLET ,IGHT%MITTING $IODES 'ROWN ON 3ILICON #ARBIDE(IGH 'AIN AND (IGH 3ENSITIVE "LUE 5LTRAVIOLET!VALANCHE 0HOTODIODES !0$S OF :N33E N I P
3TRUCTURE -OLECULAR "EAM %PITAXY -"%'ROWN ON P TYPE 'A!S 3UBSTRATES#RAIG ' -OE (ISASHI -ASUI -ATHEW # 3CHMIDT ,IKUN 3HEN
"RENDAN -ORAN 3COTT .EWMAN +ENNETH 6AMPOLA 4OM -ATES3TACIA +ELLER *AMES 3 3PECK 3TEVEN 0 $EN"AARS  #HRIS (USSEL
AND $AVID %MERSON2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED !PRIL  $EEP ULTRAVIOLET LIGHT EMITTING DIODE STRUCTURES WITH A PEAK WAVELENGTH OF  NM WERE GROWN BY METALORGANIC CHEMICAL VAPOR DE
POSITION ON  SILICON CARBIDE $ESPITE ITS STRONG ULTRAVIOLET LIGHT
ABSORPTION SILICON CARBIDE WAS CHOSEN AS A SUBSTRATE RATHER THAN SAPPHIRE FOR ITS IMPROVED THERMAL CONDUCTIVITY AND THE POTENTIAL FOR VERTICALLY CONDUCTING DEVICES !N OUTPUT POWER OF  M7 WAS OBSERVED AT
 M! $# DURING SINGLE DEVICE ON WAFER TESTING AND OUTPUT POWERS OF
 M7 AT  ! WERE OBTAINED FROM A PACKAGED SILICONE ENCAPSULATED ARRAY OF FIVE DEVICES &ORWARD VOLTAGES AS LOW AS  6 AT  M! WEREOBTAINED 4HE INJECTION PROFILE OF #P-G DURING THE P !L'A. BLOCKINGLAYER WAS INSTRUMENTAL IN THE SUPPRESSION OF EMISSION AT UNDESIRED WAVELENGTHS AND THE REALIZATION OF PEAK TO DEFECT LEVEL RATIOS GREATER THAN ;$/)  **!0,=+EYWORDS METALORGANIC CHEMICAL VAPOR DEPOSITION ALUMINUMNITRIDE LIGHT EMITTING DIODES DEEP ULTRAVIOLET SILICON CAR
BIDE
 -ATERIALS $EPARTMENT #OLLEGE OF %NGINEERING 5NIVERSITY OF #ALIFORNIA 3ANTA "ARBARA #!
 53!
 %LECTRICAL AND #OMPUTER %NGINEERING $EPARTMENT #OLLEGE OF %NGINEERING 5NIVERSITY OF#ALIFORNIA 3ANTA "ARBARA #!  53!
 #REE )NC  3ILICON $R $URHAM .#  53!
% MAIL ADDRESS MOE ENGINEERINGUCSBEDU*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS'ROWTH OF 4HICK !L. ,AYER BY (YDRIDE 6APOR
0HASE %PITAXY
9U (UAI ,IU 4OMOAKI 4ANABE (IDETO -IYAKE +AZUMASA (IRAMATSU
4OMOHIKO 3HIBATA -UTSUHIRO 4ANAKA AND 9OSHIHIKO -ASA2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED !PRIL  4HICK !L. CRYSTALS WERE GROWN BY CONVENTIONAL HYDRIDE VAPOR PHASEEPITAXY (60% ON !L.SAPPHIRE TEMPLATES UNDER LOW PRESSURE ^ 4ORR
AT HIGH TEMPERATURE ª#nª#  #OLORLESS MIRROR LIKE !L. FILMS
WERE OBTAINED AT THE GROWTH RATES OF UP TO  «MH 4HE BEST ROOTMEAN SQUARE 2-3 VALUE OF ATOMIC FORCE MICROSCOPE !&- OBSERVATIONS FOR THE !L. SURFACE WAS  NM 4HE TYPICAL VALUES OF FULL WIDTHHALF MAXIMUM &7(- OF 8 RAY ROCKING CURVES FOR  AND <BARDIFFRACTION OF !L. FILMS WERE   ARCSEC AND   ARCSEC RE
SPECTIVELY 7E ALSO INVESTIGATED THE INFLUENCES OF CARRIER GAS GROWTHTEMPERATURE AND GROWTH RATE ON THE CRYSTAL QUALITY;$/)  **!0,=+EYWORDS !L. HYDRIDE VAPOR PHASE EPITAXY (60% CARRIER GASGROWTH TEMPERATURE$EPARTMENT OF %LECTRICAL AND %LECTRONIC %NGINEERING -IE 5NIVERSITY  +AMIHAMA 4SU
  *APAN
 .'+ )NSULATORS ,TD   3UDA CHO -IZUHO KU .AGOYA !ICHI   *APAN
 3UMITOMO -ETAL -INING #O ,TD   3UEHIRO CHO  CHOME /ME 4OKYO   *APAN% MAIL ADDRESS YHLIU ELECMIE UACJP

4OMOKI !BE +OSHI !NDO +ATSUSHI )KUMI (IROYASU -AETA *UNJI .ARUSE+OUHEI -IKI !KIHIRO %HARA AND (IROFUMI +ASADA
2ECEIVED -ARCH   ACCEPTED -ARCH   PUBLISHED !PRIL  (IGH GAIN AND HIGH SENSITIVE BLUE ULTRAVIOLET AVALANCHE PHOTODIODES
!0$S ARE DEVELOPED USING HIGH QUALITY :N33E N I P HETERO STRUCTURE
GROWN ON P TYPE 'A!S SUBSTRATES BY MOLECULAR BEAM EPITAXY -"%  4HE
SHORT WAVELENGTH !0$S HAVE BEEN REALIZED BY A NEW TECHNIQUE OF INTER
FACE SUPERLATTICE BUFFERS BETWEEN P 'A!S AND P :N3E HETERO INTERFACESBY WHICH WE HAVE OVERCOME LARGE INTERFACE ENERGY BARRIERS  E6 FOR
HOLE CONDUCTION AND UNSTABLE DARK LEAKAGE CURRENTS 5TILIZING A BENEFIT
OF THE N I P STRUCTURE ON P 'A!S THE SHORT WAVELENGTH !0$S HAVE BEEN
DESIGNED WITH AN THIN TRANSPARENT N WINDOW LAYER   ± DEM
ONSTRATING LARGE !0$ GAINS '  AND HIGH SENSITIVITIES OF   !7 IN
BLUE ULTRAVIOLET OPTICAL REGION UNDER VERY LOW REVERSE BIAS CONDITION OF 6 ;$/)  **!0,=+EYWORDS 3HORT WAVELENGTH AVALANCHE PHOTODIODE "LUE 5LTRAVIO
LET !0$ :N33E N I P 3TRUCTURED !0$S ON P 'A!S )NTER
FACE SUPERLATTICE BUFFER$EPARTMENT OF %LECTRICAL AND %LECTRONIC %NGINEERING 4OTTORI 5NIVERSITY   -INAMI +OYAMA4OTTORI   *APAN*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS

0REPARATION OF !TOMICALLY 3MOOTH 4I/ 3INGLE#RYSTAL 3URFACES AND 4HEIR 0HOTOCHEMICAL
0ROPERTY
9UICHI 9AMAMOTO  +AZUKO .AKAJIMA 4AKEO /HSAWA
9UJI -ATSUMOTO   AND (IDEOMI +OINUMA 
2ECEIVED &EBRUARY   ACCEPTED -ARCH   PUBLISHED !PRIL  !TOMICALLY SMOOTH RUTILE 4I/    AND SURFACES WERE OBTAINED FOR THE FIRST TIME BY AN APPROPRIATE CLEANING AND
SUBSEQUENT THERMAL TREATMENT OF COMMERCIALLY AVAILABLE SINGLE CRYSTALS
4HE ANNEALING TEMPERATURE FOR OBTAINING THE ULTRA SMOOTH SURFACE VARIED
BETWEEN  AND ª# DEPENDING ON THE CRYSTALLOGRAPHIC PLANES 4HE
KEY POINT TO THE SUCCESSFUL PREPARATION OF THE REGULARLY STEPPED 4I/ SUR
FACE WAS AN (& TREATMENT FOR THE REMOVAL OF SURFACE IMPURITIES "Y USINGTHESE WELL DEFINED 4I/ SURFACES THE PHOTOCHEMICAL PROPERTY WAS FOUND
TO DEPEND ON THE SURFACE ORIENTATION THE PHOTO REDUCTION OF !G TO !GMETAL FROM AN AQUEOUS SOLUTION PROCEEDED IN THE ORDER OF         ON THE 4I/ SURFACES
;$/)  **!0,=+EYWORDS RUTILE 4I/ SURFACE ORIENTATION STEP AND TERRACE ULTRASMOOTH SURFACE PHOTOCHEMICAL ACTIVITY
 -ATERIALS AND 3TRUCTURES ,ABORATORY 4OKYO )NSTITUE OF 4ECHNOLOGY  .AGATSUTA -IDORI KU
9OKOHAMA   *APAN 2ESEARCH #ENTER !SAHI 'LASS #O ,TD  (AZAWA +ANAGAWA KU 9OKOHAMA  *APAN
 &RONTIER #OLLABORATIVE 2ESEARCH #ENTER 4OKYO )NSTITUE OF 4ECHNOLOGY  .AGATSUTA -IDORIKU 9OKOHAMA   *APAN
 #2%34 *APAN 3CIENCE AND 4ECHNOLOGY CORPORATION    .IHONBASHI 4YU O KU 4OKYO  *APAN% MAIL ADDRESS YUICHI YAMAMOTO AGCCOJP*3!0 )NTERNATIONAL .O *ULY 

!BSTRACTS OF %XPRESS ,ETTERS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS(ARD 8 RAY $IFFRACTION ,IMITED .ANOFOCUSINGWITH +IRKPATRICK "AEZ -IRRORS)MPACT OF $EFECT #ONTROL ON THE 0OLARIZATION
0ROPERTIES IN "I4I/ &ERROELECTRIC 3INGLE#RYSTALS(IDEKAZU -IMURA 3ATOSHI -ATSUYAMA (IROKATSU 9UMOTO(IDEYUKI (ARA +AZUYA 9AMAMURA 9ASUHISA 3ANO
-ASAFUMI 3HIBAHARA +ATSUYOSHI %NDO 9UZO -ORI
9OSHINORI .ISHINO +ENJI 4AMASAKU -AKINA 9ABASHI
4ETSUYA )SHIKAWA  AND +AZUTO 9AMAUCHI2ECEIVED -ARCH   ACCEPTED !PRIL   PUBLISHED !PRIL  .ANOFOCUSED 8 RAY BEAMS ARE NECESSARY FOR NANOMETER SCALE SPATIALMICROSCOPY ANALYSIS 8 RAY FOCUSING USING A +IRKPATRICK "AEZ SETUP WITHTWO TOTAL REFLECTION MIRRORS IS A PROMISING METHOD ALLOWING HIGHLY EFFICIENT AND ENERGY TUNEABLE FOCUSING )N THIS PAPER WE REPORT THE DEVELOPMENT OF ULTRAPRECISE MIRROR OPTICS AND THE REALIZATION OF A NANOFOCUSEDHARD 8 RAY BEAM &ABRICATED MIRRORS HAVING A FIGURE ACCURACY OF  NM
PEAK TO VALLEY HEIGHT GIVE IDEAL DIFFRACTION LIMITED FOCUSING AT THE HARD
8 RAY REGION 4HE FOCAL SIZE DEFINED AS THE FULL WIDTH AT HALF MAXIMUM IN
THE INTENSITY PROFILE WAS  NM   NM AT AN 8 RAY ENERGY OF  KE6;$/)  **!0,=+EYWORDS HARD 8 RAY NANOFOCUSING FOCUSING MIRROR +IRKPATRICK"AEZ MIRRORS DIFFRACTION LIMITED FOCUSING PLASMA #6%%- -3) 2!$3)
 $EPARTMENT OF 0RECISION 3CIENCE AND 4ECHNOLOGY 'RADUATE 3CHOOL OF %NGINEERING 5NIVERSITY
OF /SAKA   9AMADA OKA 3UITA /SAKA   *APAN 2ESEARCH #ENTER FOR 5LTRA 0RECISION 3CIENCE AND 4ECHNOLOGY 'RADUATE 3CHOOL OF %NGINEERING
5NIVERSITY OF /SAKA   9AMADA OKA 3UTA /SAKA   *APAN
 (YOGO 0REFECTURAL )NSTITUTE OF 4ECHNOLOGY    9UKIHIRA CHO 3UMA KU +OBE  *APAN
 30RING 2)+%.    +OUTO -IKAZUKI (YOGO   *APAN
 30RING *APAN 3YNCHROTRON 2ADIATION 2ESEARCH )NSTITUTE *!32)    +OUTO -IKAZUKI(YOGO   *APAN#ORRESPONDENCE AUTHOR % MAIL ADDRESSES MIMURA PRECENGOSAKA UACJP AND
YAMAUCHI PRECENGOSAKA UACJP

9UJI .OGUCHI  4AKAHIRO -ATSUMOTO AND -ASARU -IYAYAMA2ECEIVED -ARCH   ACCEPTED !PRIL   PUBLISHED !PRIL  7E HAVE INVESTIGATED THE DEFECT STRUCTURE IN BISMUTH TITANATE"I4I/ THROUGH HIGH TEMPERATURE NEUTRON POWDER DIFFRACTION ANALYSIS AND AB INITIO ELECTRONIC STRUCTURE CALCULATIONS )T IS SHOWN THAT THE
VACANCIES OF "I AND OXIDE IONS ARE CREATED PREFERENTIALLY IN THE PEROVSKITE
LAYERS RATHER THAN IN THE "I/ LAYERS -EASUREMENTS OF THE LEAKAGE
CURRENT PROPERTIES OF THE SINGLE CRYSTALS DEMONSTRATE THAT ELECTRON HOLESARISING FROM THE INCORPORATION OF OXYGEN AT THE VACANCIES OF OXIDE IONSACT AS DETRIMENTAL CARRIERS FOR ELECTRICAL CONDUCTION AT ROOM TEMPERA
TURE ! CRYSTAL GROWTH UNDER HIGH OXYGEN PRESSURE IS PROPOSED TO BE AD
VANTAGEOUS FOR SUPPRESSING THE VACANCY FORMATION AND FOR ATTAINING A
LARGE REMANENT POLARIZATION AS WELL AS A HIGH INSULATING PROPERTY OF THE"I4I/ SYSTEM ;$/)  **!0,=+EYWORDS BISMUTH TITANATE SINGLE CRYSTAL DEFECT OXYGEN VACANCYAB INITIO
 2ESEARCH #ENTER FOR !DVANCED 3CIENCE AND 4ECHNOLOGY 4HE 5NIVERSITY OF 4OKYO   +OMABA -EGURO KU 4OKYO   *APAN
 02%34/ *APAN 3CIENCE AND 4ECHNOLOGY !GENCY *34    (ONCHO +AWAGUCHI 3AITAMA  *APAN*PN * !PPL 0HYS 6OL   PP , ,0ART  .O   !PRIL ¥ 4HE *APAN 3OCIETY OF !PPLIED 0HYSICS0ULSED ,ASER $EPOSITION OF &ERROELECTRIC
.A+ .B/ "ASED 4HIN &ILMS
4AKEHISA 3AITO (ARUMI !DACHI AND 4AKAHIRO 7ADA
2ECEIVED -ARCH   ACCEPTED !PRIL   PUBLISHED !PRIL  &ERROELECTRIC .A+,I .B4A3B / THIN FILMS WERE EPITAXIALLY GROWN ON A  3R2U/ 3R4I/ SUBSTRATE BY PULSED LASERDEPOSITION #RYSTALLOGRAPHIC ANALYSIS OF THE FILM WAS PERFORMED USINGCONVENTIONAL 8 RAY DIFFRACTION ANALYSIS AND ROCKING CURVE MEASUREMENTS
(IGH RESOLUTION 8 RAY DIFFRACTION RECIPROCAL SPACE MAP WAS ALSO MEASURED TO ANALYZE THE CRYSTALLOGRAPHIC RELATIONSHIP BETWEEN THE GROWNFILM AND THE 3R4I/ SUBSTRATE AND TO DETERMINE THE STRAIN STATE OF THE
FILM 4HE FULL WIDTH AT HALF MAXIMUM OF THE ROCKING CURVE WAS AS SMALL
AS ª AND THE DETERMINED PSEUDO TETRAGONAL LATTICE PARAMETERS WERE
A ± AND C ± 4HE 0 % HYSTERESIS LOOP OF THE FILM WAS CHAR
ACTERISTIC OF FERROELECTRIC BEHAVIOR ;$/)  **!0,=+EYWORDS FERROELECTRIC SODIUM NIOBATE POTASSIUM NIOBATE THIN
FILM PULSED LASER DEPOSITION EPITAXIAL FILM
$EPARTMENT OF -ATERIALS #HEMISTRY 2YUKOKU 5NIVERSITY 3ETA /TSU   *APAN*3!0 )NTERNATIONAL .O *ULY 