HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Getting Started>
Table of Contents• Outlines• Simulation Circuit• Simulation Settings• Component List
• PCB Pattern Parasitic Inductors• Analytical Tools

2022. Sep
65UG039E Rev.001

How to use ROHM Solution Simulator
Please visit ROHM Solution Simulator page(https://www.rohm.com/solution-simulator)• Hands-On User’s Manual Link
• Tutorial Short Videos available© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Outlines>

2022. Sep
65UG039E Rev.001

This simulation circuit provides the double pulse test simulation environment of HB2637L-EVK-301,
ROHM’s 4th Generation SiC MOSFET Half Bridge Evaluation Board“. The simulation circuit iscomposed of the detailed simulation model with the circuit board parasitic inductance to achieve
higher switching waveform simulation accuracy.
Features• Double pulse test circuit (High-side switching)• 4th generation SiC MOSFET SCT4036KW7 + gate driver IC BM61S41RFV-C.
• Device equivalent circuit model of the components are used for simulation accuracy.
• Parasitic inductance of PCB patterns are modelled and applied to the simulation circuit.
• Vgs, VDC and other constants can be modified.
• Approx. simulation elapsed time is 6 min.
Applications• By simulating and verifying the operating conditions and circuit constants of drive circuits, etc., theworkload of hardware evaluation can be reduced.

Figure 1. HB2637L-EVK-301• By extracting the parasitic inductance of the pattern from the PCB layout and adding it to thecircuit for simulation, it is possible to improve the problem before prototyping.
• Simulation with the EVK detailed model may help to analyze the cause of noise or surge served in
the hardware evaluation.
Note) For more details of HB2637L-EVK-301, please refer to the following documents.
HB2637L-EVK-301_ug-e.pdf© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG039E Rev.001

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Simulation Circuit>
HB2637L-EVK-301 Simulation Model

Table 1. Parameter Settings
Parameters

Descriptions

Default

VDC

DC Voltage

800 V

HS_VCC2,
LS_VCC2

Gate drive positive
voltage

18 V

HS_VEE,
LS_VEE

Gate drive negative
voltage

0V

Tj

Q51, Q151 Device
Junction Temperature

25 °C

Low-side pulse period

10 μs

LS_VPULSE

Low-side pulse width
HS_VPULSE

Simulation
Setting Range

LP1
HS_
VPULSE

LP6
C25

D13 R24

LP14

D15h

LP12 R25

LP8

R18

D15l

LP5

R19

R16

LP7
VS1

LP53

LP10
Q3

LP3

C32

LP60
LP9

C37

C31

R20

LHSVCC2
HS_VEE

LP54

i2q1

LP4
HS_
VCC2

LP52

LP51

C38

U2

15 to 25 V
0 to 4 V

LP11

LP13

R21

LP61

C29
LP55

L1

R22
LP59

Fixed

R23

LP2

4.9 μs

LVD

LP31

LP26

LP21

VDC

LP56

“L” (DC)LS_
VPULSE

C26

U102

C36
D14

R26

LP34

LP32 R27

LP28

D16h
Q4

LP24
LP23

LS_
VCC2

LP25

ep2q3

LP58

LP30
D16l

ep2q4

R17

LP27

i2q2

VS2

LLSVCC2LP29
LS_VEE

C35

LP33

LP57

C30

LP22

Figure 2. Simulation Circuit© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG039E Rev.001

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Simulation Settings>
How to setup the gate drive pulse
1. Gate drive voltage Vgs
Figure 3 shows a simplified gate drive circuit, and Figure 4
shows an example of the Vgs waveform. The voltage
source VEE gives the voltage of the DS pin of the SiC
MOSFET with respect to the VEE2 voltage of the gate
driver IC. The voltage source VCC2 gives the supply
voltage VCC of the gate driver IC with respect to thevoltage reference. As a result, the gate voltage Vgs of the
SiC MOSFET is (VCC2-VEE) for 'H' voltage and (-VEE) for'L' voltage.

Set HS_VCC and HS_VEE for the high-side circuit, and
LS_VCC and LS_VEE for the low-side circuit, respectively.

SiC MOSFET
Gate voltage+

VCC2=20V

SiC
MOSFET

GDIC

VCC2 = 20V

Vgs=18V
GATE

+

Vgs

VEE2

VEE = 2V

SiC MOSFET
DS voltage

DS+

VEE = 2V

GDIC
GND2 voltage

2. Gate Drive Pulse timing
Voltage source ‘HS_VPULSE’ generate the gate drive
pulse timing. The period T = 10μs and the pulse width =5μs. The actual gate drive pulse output is at the ‘out’ pin of
BM61S41RFV-C, the gate driver IC.

Figure 3. Simplified Gate Drive Circuit(common for high-side and low-side)

Figure 4. SiC MOSFET Vgs Voltage© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG039E Rev.001

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Simulation Settings>
How to set simulation parameters
2. ‘USE_INITIAL_VOLTAGE’ and ‘USE_INITIAL_CURRENT’

1. Using Property Editor
To open the Property Editor, right-click on a component and select"Properties" from the pull-down menu. Figure 5 shows an example of
the Property Editor. You can browse the parameters of thecomponent from the Property Editor.
Components shown in blue have “tunable" parameters, and you canchange the parameters in the white text box in the Property Editor.
Apply the values within the displayed tolerance range.

The capacitor property 'USE_INITIAL_VOLTAGE' and the inductor property'USE_INITIAL_CURRENT' are used to improve simulation convergence andsimulation speed. Initial voltage or initial current value will be applied to thecomponent as the initial condition. It will improve simulation convergence.
When changing simulation parameters, the initial voltage and the initial current
should be revised.
Table 2 and Table3 shows the recommendation of the initial voltage andcurrent.

Table 2. Initial Voltage Recommendation Table 3. Initial Current Recommendation
Symbol(a) Capacitor

Initial Voltage
Recommendation

C38(HS_VCC2 - HS_VEE)

C37

SymbolInitial Current
Recommendation

L1

0

HS_VEELHSVCC0

C36(LS_VCC2 - LS_VEE)LLSVCC0C35

LS_VEE(b) Inductor

Figure 5. Property Editor Examples© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG039E Rev.001

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Component List>
Table 4. Power Device / Gate Driver IC Component List
SymbolPart Number

DeviceQ3, Q4

SCT4036KW7

4G-SiC MOSFET, 1200V, 36mohm

D13, D14

RB160MM-40

Schottky Barrier Diode

IC4, IC5

BM61S41RFV-C

1ch Gate Driver Providing Galvanic Isolation

D15(h, l)
D16(h, l)

BAT54S

Schottky Barrier Diode

Table 6. Resistor Component List
Symbol

R value[ohm]

TunableR24, R25, R26, R27

10✓

R16, R17

10k✓

R18, R19, R20,
R21, R22, R23

1M

Comments
Gate resistors

BleederNote) The value is constant unless otherwise specified as ‘Tunable’.

How to change MOSFET Model123

1. Right-click on the device
2. Select “Properties”
3. Pull down “SpiceLib Part”

4

4. Select the product© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG039E Rev.001

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Component List>
Table 7. Inductor Component List
Inductor Values

Simulation
Settings

P1

Descriptions

Symbol

L
[H]

PAR_
RES
[ohm]

SER_
RES
[ohm]

PAR_
CAP[F]

TunableUse Initial current= 0 Option

L1

250μ

51k

0.13

2.124p✓✓P2
L

SER_RESPAR_RES
PAR_CAPDPT Inductive Load

Figure 5. Inductor Model

Note) Refer to Figure 5 for the model composition.
Note) The value is constant unless otherwise specified as ‘Tunable’.

Table 8. Capacitor Component List
Capacitor Values
Symbol

C
[F]

ESR
[ohm]

ESL
[H]

C31

5μ

10.9m

27n

C32

10n

110m

6n

C36, C38

0.1μ

22.6m

0.4n

C35, C37

0.1μ

22.6m

0.4n

C25, C26,
C29, C30---

Simulation Settings
TunableInitialVoltage[V]

Use
InitialVoltage18✓-Note) Refer to Figure 6 for the model composition.
Note) The value is constant unless otherwise specified as ‘Tunable’.

Descriptions

P1

P2
C

ESL

ESR

Figure 6. Capacitor Model

GRM31CR71H475KA12_D
C0V_25degC model is usedNote) We have not been able to confirm operation with all combinations.
Please read the disclaimer carefully.

© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG039E Rev.001

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<PCB Pattern Parasitic Inductors>
Table 9. EVK PCB Pattern Parasitic Inductor model
Inductor Values
Symbol

Sim Settings
Initial Current =0 Option

Inductor Values

Sim Settings

Symbol

SERL
[nH]

SERR
[mohm]

Tunable

SERL
[nH]

SERR
[mohm]

Tunable

LP1

2.326

6

✓

LP27

15.73

27

✓

LP2

0.918

1

✓

LP28

0.921

1

✓

LP3

2.784

2

✓

LP29

3.133

2

✓

LP4

1.570

4

✓

LP30

1.919

1

✓

LP5

5.042

17

✓

LP31

2.913

7

✓

LP6

1.714

5

✓

LP32

0.913

1

✓

LP7

16.82

26

✓

LP33

4.408

5

✓

LP8

0.986

1

✓

LP34

1.377

1

✓

LP9

2.322

1

✓

LP51

1.154

0.2

✓

Initial Current = 0
OptionTable 9 shows the PCB pattern inductor model.
These are defined from the electro-magnetic analysis of the
PCB pattern layout and applied to the simulation circuit as
discrete components. Figure 7 shous the model equivalentcircuit. The resister of 100 ohm in parallel is for stabilizing
simulation.
You can modify these inductors, for example, referring to thelayout design constraints to relatively evaluate how the patternlayout would affects the switching behaviors.

P1

SERL

P2
SERR

LP10

2.089

1

✓

LP52

2.592

1

✓

LP11

3.479

7

✓

LP53

2.038

1

✓

100ohm

LP12

0.951

1

✓

LP54

1.211

1

✓

Figure 7. Parasitic L model

LP13

3.880

4

✓

LP55

7.697

2

✓

LP14

1.623

1

✓

LP56

5.289

1

✓

LP21

2.250

6

✓

LP57

29.54

5

✓

LP22

1.115

1

✓

LP58

6.997

1

✓

LP23

2.213

4

✓

LP59

2.298

1

✓

LP24

1.454

4

✓

LP60

2.725

1

✓

LP25

4.841

14

✓

LP61

1.072

0.5

✓

LP26

1.549

5

✓

Note) Refer to Figure 7 for the model composition.
Note) The value is constant unless otherwise specified as ‘Tunable’.
Note) The inductor models are defined from the analysis of the PCB pattern design data and theaccuracy is not guaranteed.
Note) We have not been able to confirm operation with all combinations. Please read the disclaimer
carefully.
© ROHM Co., Ltd.

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HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model<Analytical Tools>

2022. Sep
65UG039E Rev.001

Analytical tools are used in the simulation circuit for current sensing and device loss calculation.
1. Current Sensing Tool
The component ‘Current to Continuous Quantity’ outputs the current
flow ‘p1’ through ‘p2’ (See Figure 8.)
It is used to measure the drain current of the SiC MOSFET.

2. Device Loss Calculation Tool
The component ‘Loss_Calc3’ calculates the voltage difference
between ‘p1’ and ‘p2’, and outputs the products of the voltage
difference and ‘i_sense’ current input as ‘loss_out’ and its integrationas ‘loss_integ_out’ (See Figure 9.)
𝑙𝑜𝑠𝑠_𝑜𝑢𝑡 𝑡 = v 𝑡 × 𝑖_𝑠𝑒𝑛𝑠𝑒 𝑡𝑡𝑙𝑜𝑠𝑠_𝑖𝑛𝑡𝑒𝑔_𝑜𝑢𝑡 𝑡 = න 𝑙𝑜𝑠𝑠_𝑜𝑢𝑡 𝑡 𝑑𝑡
0

* v 𝑡 : voltage difference between p1 and p2

Figure 8. Current to Continuous QuantityNote) The Loss_calc component is a utility module to support power loss calculation,and does not affect the simulation results of circuit operation or performance.

Figure 9. Loss_Calc3© ROHM Co., Ltd.

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NoticeNotes1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
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