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  m  V c f SiC W Ŭ ģ Ĺ Ƨ Ɔ ¶ Ƶ IIIƶCharacterization of SiC crystals by X-ray topographyý × Ò ƨ 17 ĩ œ Ŀ Ě 17 ƥ į Ļ Ķ 17 ý ¢ ­ 27Ƴ ķ Ų  27 ô å ´ ą 27 ² 9 ĥ Ʃ § 2
Hirotaka Yamaguchi, Hirofumi Matsuhata, Masaki Sekine,
Tamotsu Yamashita, Seiichi Takahashi, Yoshihiko Miyasaka, Masayuki Sasaki
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Ƶ English ƶ  Characterization of defects in silicon carbide (SiC) as a material for future powerelectronics has been performed by means of monochromatic X-ray topography. These results
were analyzed in comparison with macro defects consisting of stacking faults or polytypes.

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T. Yamashita, K. Momose, D. Muto, Y. Shimodaira, K. Yamatake, Y. Miyasaka, T. Sato, H. Matsuhata and M.
Kitabatake“Characterization of triangular-defects in 4°-off 4H-SiC epitaxial wafers by synchrotron X-ray topography andby transmission electron microscopy”
Materials Science Forum, to be published.

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