Development of Anti-static UV-tapes for
Semiconductor Processing
by Yasumasa Morishima *, Shin-ichi Ishiwata *, Hiromitsu Maruyama *2,
Hidefumi Miyagi *2, Yoshihisa Kanou *2 and Tsuneo Aoi *2

In accordance with the increase in semiconductor products that are sensitive toElectrostatic Discharge (ESD) problems, operating problems and additional product defects due to ESD are becoming serious problems in semiconductor processing. As well as
higher quality and higher performance, anti-static properties are required of UV-tapes used in dicing and back-grinding processes.
In general, UV-tapes are easy to charge at voltages up to around 10 kV in the peeling processfrom liner film. Because the surface voltage on UV-tape usually decays very slowly, the probability of additional product defects due to ESD are very high in the following manufacturing process.
The anti-static UV-tapes we have developed show the high performance of conventional UVtape, and also have highly efficient anti-static properties such as a lower static charge voltage of
below 0.01 kV and faster surface voltage decay of less than a second, which were measured bya static-honest meter.

ABSTRACT1.

INTRODUCTION

Since 1987, the Industrial Products Division of Furukawa
Electric has been manufacturing and selling UV light curable adhesive tapes (UV-tapes), which are used in semiconductor manufacturing processes such as dicing andthe back-grinding processes (See Photo 1, Figure 1 and
2). UV-tape is used in a variety of semiconductor manufacturing process lines because of its superior adhesive
properties and fewer impurities than conventional non-UV
tapes. In accordance with development of high-performance and high-quality semiconductor products, therequirements of adhesive tapes used in semiconductor
processes are becoming more complex. Today, to develop fast clock rate and low electricity-consuming devices,attempts have been made to reduce protective circuit anddrive voltage of devices. As a result of these developments, newly developed high-performance semiconductor
devices are usually very sensitive to ESD problems compared to conventional devices. Therefore, guidelines for
ESD problems are needed at many factories manufacturing high-performance devices 1), 2) (See Table 1).
ESD events also cause electromagnetic interference(EMI), resulting in equipment malfunctions in computerautomated factories. In general, to eliminate static electricity in factories an ionizer is usually used as efficient antistatic equipment. But, simply installing an ionizer is not

Photo 1

UV-tapes for semiconductor processing.

UV-tape

Tape lamination

Si wafer

Back-grinding process

UV irradiation
UV irradiation
Peel off* AT Products Dept., Industrial Products Div.
*2 Polymer Engineering Center, Ecology and Energy Lab.

Figure 1

An application example of UV-tape for back-grinding
process.

1

Si wafer

What is UV-tape ?

UV-tape

The tape which can provide proper
adhesive strength
Polymer
Oligomer
Initiator

Dicing

UV irradiationHigh
UV-tape

UV irradiation

UV irradiation

Cross-linking
reaction

Adhesive strength

Tape lamination

Non-UV

ColetteLow
Processing

Pick up

Table 1

An application example of UV-tape for dicing
process.

Recommended level of voltage and charge during
processing 1).
• Semiconductor Process(Process rule: 0.25 µ m~0.35 µ m CMOS IC): 50 V (1 nC)• CCD Assembly Process (1,500,000 pixel): 200 V (4 nC)• Pickup Optical Device: 30~50 V (1 nC)• CD-ROM Drive Assembly Process: 30~150 V (1 nC)• HDD Assembly Process:
MR HEAD: 10 V (0.2 nC)
GMR HEAD: 5 V (≤ 0.2 nC)• LCD Assembly Process: 50~100 V

sufficient to obtain higher reliability. Simultaneous use ofantistatic materials that enable earth connections among
machine tools is important to achieve higher reliability.
Because even a small electrostatic charge can destroy
high-performance devices in an ESD event, anti-static
properties are required of UV-tapes used in dicing andback-grinding processes. We have developed antistatic
UV-tapes for dicing processes. The anti-static UV-tapes
we have developed show the high performance of conventional UV-tape, and also have highly efficient anti-static properties. In this paper, we show the properties of antistatic UV-tapes in comparison with conventional UVtapes.

2.
2.1

GENERAL PROPERTIES OF UV-TAPES

Adhesive Strength Control Mechanism of UVtapes
In general, UV light curable adhesive is a blend of acrylicpressure sensitive adhesive, UV light curable oligomer,
and initiator of UV photochemical reactions (See Figure3). The major constituents of acrylic pressure sensitiveadhesive are polyacrylic esters such as polybutyl acrylate
and poly2-ethylhexyl acrylate. Usually, comonomers suchas acrylic acid and vinyl acetate are copolymerized withpolyacrylic esters. The adhesive properties of acrylic

2

Peel off after
processing

Strong adhesive strength during process
Easy to peel off after processing

NeedleFigure 2UV
irradiation

Figure 3

Mechanism of adhesive strength decrease of UVtapes.

adhesive are controlled by the properties of comomers,
blending ratio, molecular weight, molecular weight distribution, and structure of crosslinking. Absorbing UV lightwith a wavelength of approx. 300-400 nm, the initiator
generates radicals through photochemical reactions to initiate chain reaction polymerization of origomers.
Irradiating UV light gives the adhesive polymer acrosslinking structure. It had been thought that adhesive
properties would be lost due to the increased elastic modulus caused by forming crosslinking structures in adhesivepolymer 3).
2.2 Surface Contamination
Contamination on the surface of a wafer often creates
serious problems in packaging processes. One example isthe so-called popcorn phenomenon in a reflow soldering
process. When adhesive residue from tapes for dicing orback-grind processes remains on the surface of a wafer, it
sometimes results in an adhesion failure between moldresin and wafer surface, because the residue increases
concentration of moisture between the boundary. In theworst case, the concentration of moisture on the boundary
surface between wafer and mold resin under highly humid
conditions cause rapid vaporization and expansion ofmoisture under reflow soldering conditions, which results
in an adhesion failure at the boundary or breakdown of themold package. Furthermore, with the practical applicationof a LOC package, a further reduction of surface contamination is required for UV-tapes used, because the back of
the wafer directly contacts the mold resin in the LOC
package. Analyzing surface contamination on a wafer isvery important to reduce the origins of such contaminationand successive production of defective devices. Table 2
shows methods of analyzing impurities on semiconductor
wafers.
As an example of a method of analyzing impurities onwafers, particle counting on wafers using a laser scanningdevice is shown in Photo 2 and Figure 4. Although many
particles of not less than 0.1 µm in diameter are observed
on a 5-inch wafer surface protected with non-UV tapes,
the number of particles on a wafer protected by UV-tape ismuch smaller than that on non-UV tape.

Furukawa Review, No. 22

2002

Table 2Classification
Principle

MethodSurface composition

Morphology observation

Composition analysis

Direct observation of

Analysis of residue on a

Surface energy of aof wafer surface

morphological feature

wafer

contaminated wafer

XPS, EPMA

Microscope

Thermal desorption/GC-MS

Static contact angle

TOF-SIMS

SEM, TEM

Solvent extraction/FT-IR

Dynamic contact angle

ATR-FTIR

Particle counter

RAS-FTIR

AFM

10000

Particle count (count/5in )Analysis methods of impurities on semiconductor wafers.

0.1-0.2

Table 30.2-0.3

Comparison of development methods for anti-staticadhesive.

0.5-0.75

Contamination

0.75-1.0
1.0-1.5100

1.5-2.0
2.0Particle size ( µ m)

10

①non-UV before rinse②non-UV after rinse①②③

Particle size ( µ m)

Figure 4④③non-UV rinse less
④FURUKAWA UV-tapeAdhesiveFilm

property elongation

Cost
Low

Surfactant
Ammonium salt

Low

Conductive filler

High

Conductive polymer

High

Hybrid method: good,: fair,Medium: no goodParticle count on wafers by a laser scanning device.

After rinse, Non-UV type

Rinse less non-UV typeparticle count=332

particle count=102

Furukawa UV-tapeparticle count=36

Photo 2

Surface property

0.3-0.5

1000

1

3.

Qualitative/Quantitative

Particle distribution on wafers by a laser scanningdevice.

DEVELOPMENT OF ANTI-STATIC UVTAPES FOR DICING PROCESS

3.1 Development of Anti-Static UV Curable Adhesive
There are many methods of developing anti-static pressure-sensitive adhesive tape. Several laid-open disclosure
public patent bulletins concerning anti-static tapes havebeen opened to the public by major manufacturing companies of adhesive tapes 4), 6). However, as well as anti-static

properties of tapes, low surface contamination on wafers
and properly controlled stable adhesive strength are very
important properties, especially for tapes used in semiconductor processing. Therefore, using surfactants as adhesive additives is not an appropriate method. Although conventional surfactants in adhesive readily ooze out andlower its surface resistivity, they cause adhesive strength
fluctuate and sometimes contaminate the surface of awafer. Using a conductive filler makes it too difficult to balance its anti-static property and adhesive strength (SeeTable 3). After a careful examination of these methods,
we have focused on a hybrid method that adds an antistatic property to the adhesive molecule itself. The antistatic UV-tapes we have developed show the high performance of conventional UV-tape, and also have the highly
efficient anti-static properties 7), 8) shown in the following
section.
3.2 Performance of Anti-static UV-tapes
Temperature dependence of storage modulus G', loss
modulus G", and tanδ of anti-static adhesive we havedeveloped are shown in Figure 5. Figure 5 shows that theglass transition temperature Tg of anti-static adhesive isaround -25°C and G' is approximately 104 Pa at room
temperature, which indicates that this anti-static adhesive
has the same performance as conventional UV-tapes.
Adhesive properties, particle number on adhered wafer,and anti-static properties of UV-tape we have developed
are shown in Table 4 and compared to conventional UVtape. As a reference index of electrostatic properties, surface resistance, electrostatically charged equilibrium voltage and half-life of charged voltage are listed in Table 4.
The electrostatically charged equilibrium voltage and halflife are measured by a static honest meter (See Figure 6).

3

The electrostatically charged equilibrium voltage is measured under an alternative corona discharge condition ona tape sample on a turntable at a rotational speed of 1550
rpm as shown in Figure 6. The half-life is the time taken
for the voltage to decrease to half of the equilibrium value
after corona discharge is switched off.
The general properties shown in Table 4 indicate thatthe anti-static UV-tapes we have developed have the highperformance of conventional UV-tape and highly efficientanti-static properties. We are continuing to develop higher
performance anti-static UV-tapes which are not presented
in this paper. Some customers have already evaluated ouranti-static UV-tapes as being the most efficient available.
In particular, according to the results of their evaluations,the surface voltage on the anti-static UV-tape after dicing
and cleaning process with super purified water is lower
than that of any other tapes developed by other companies.

4.

SUMMARY

With the increase of semiconductor products that are sensitive to ESD problems, operating problems and additional
product defects due to ESD are becoming serious problems in semiconductor processing. As well as higher quality and higher performance, anti-static properties are
required of UV-tapes used in dicing and back-grinding
processes. The anti-static UV-tapes we have developed
show the high performance of conventional UV-tape, andalso have highly efficient anti-static properties. In thispaper, we have shown the properties of antistatic UVtapes in comparison with conventional UV-tapes.
Half-lifeV
Switch OFF

Time
2.5

1.E+09G'

1.E+08

2

G''

1.5

1.E+06
1.E+05tan δG', G''/Pa

Corona discharge electrodeSensortan δ

1.E+07

Switch ON

1550 rpm

1

10 kV

1.E+04

Switch OFF

0.5
1.E+03
1.E+02
-50

0
-30

-10

10

30

50

70

90

Temperature (°C)

Figure 5

Temperature dependence of storage modulus G’,
loss modulus G”, and tanδ of anti-static adhesive.

Table 4

Figure 6

Measurement method of anti-static properties of UVtapes by a static honest meter.

Comparison of general properties of anti-static UV-tape.

Description

Anti-static property

Sample1550rpm

Anti-static UV-tape

Conventional UV-tape

Surface resistivity (Ω/ )1✕109

1✕1014Charge voltage (kV)*

0.01

2.0

<1

1100

650

164

Half-life (s)*Before UVPeak (mN/mm2)

After UV

7

7

Before UV

280

244

Tack Strength
Integral (mN/mm2s)

After UV

1

1

Before UV

2.6

2.9

Adhesive strength

After UV

0.8

0.12

(N/25 mm)

Before UV

2.1

5.9

After UV

0.16

0.1

3

7

Package

Si wafer
Contamination

Particle count***: Measured by a static honest meter (see Figure 6). Test condition are as follows. Corona discharge:+10 kV, Rotational speed ofsample: 1550 rpm**: Total particle count more than 0.3 mm in diameter are listed. Adherent: 5 inch Si wafer, UV irradiation: 1000 mJ/cm2
Adhesive Strength Test conditions: Dosage of UV: 1000 mJ/cm2, Peeling Angle: 90 degree, Peeling Speed: 50 mm/min

4

Furukawa Review, No. 22

2002

5.

FUTURE WORK

We have developed anti-static UV-tapes using an anti-static adhesive material. To upgrade the anti-static properties
of UV-tapes, additional development of anti-static backing
film is also required. A subject of future studies is thedevelopment of anti-static UV-tapes used in back-grinding
processes and development of low-cost technology which
will strengthen our competitiveness. To expand our tapebusiness, it is necessary to develop new products used inprocesses other than dicing and back-grinding 9).

REFERENCES
1) T. Suzuki, 2001, Guideline Seminar about ESD Problems in
Semiconductor Industry organized by Trek Japan INC. and
KASUGA DENKI INC. (in Japanese)
2) SEMICON Japan 2000, Workshop of electrostatics, SEMI E78
and Revise E433) Y. Kanou, et al. 1992, Polymer Processing, vol41, 146
4) Japanese Patent Laid-open Disclosure 2000-273417, Heisei 11269436
5) Japanese Patent Laid-open Disclosure 2000-129235
6) Japanese Patent 2955089, 2649731
7) Y.Morishima et al. Proceedings of The 39th Annual Meeting of
The Adhesion Society of Japan, 2001, p.45. (in Japanese)
8) Y.Morishima et al. Proceedings of The 11th Annual RCJ
Reliability Symposium, November 2001, p.183. (in Japanese)
9) Y.Morishima, et al Proceedings of The 16th JIEP Annual Meeting
March, 2002, p.181 (in Japanese)5