RoHS

MMDT3946

COMPLIANT

Dual NPN+PNP Small Signal TransistorFeatures● Epoxy meets UL-94 V-0 flammability rating● Surface mount package ideally Suited for Automatic Insertion● NPN/PNP

Mechanical Data
● Package: SOT-363● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102● Marking: K46■Equivalent circuit■ Ordering Information (Example)
PREFERED P/N

PACKINGCODE

UNIT WEIGHT(g)MINIMUM
PACKAGE(pcs)

INNER BOXQUANTITY(pcs)

OUTER CARTONQUANTITY(pcs)

DELIVERY MODE

MMDT3946

F2Approximate 0.009g3000

30000

1200007” reel

1/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

MMDT3946■TR1 NPN Pin1、2、6 Maximum Ratings (Ta=25℃ Unless otherwise specified）
Item

SymbolUnit

Conditions

Value

Collector-Base Voltage

VCBO

V

IC=10μA,IE=060

Collector-Emitter Voltage

VCEO

V

IC =1mA,IB=040

Emitter-Base Voltage

VEBO

V

IE=10μA,IC=06Collector Current -Continuous

ICmA

200

Total Device Dissipation

PCmW

200Junction Temperature

Tj℃

150

Storage Temperature

TSTG℃-55 to +150

■TR1 NPN Pin1、2、6 Electrical Characteristics (Ta=25℃ unless otherwise specified)
ItemSymbol

Unit

Collector-base breakdown voltage

VCBOV

IC=10μA,IE=060

Collector-emitter breakdown voltage

VCEO

VIC =1mA,IB=040

Emitter-base breakdown voltage

VEBO

V

IE=10μA,IC=06

Collector cut-off current

ICBO

nA

VCB=30V,IE=050

Collector cut-off current

ICEO

nA

VCE=30V,IB=050

Collector cut-off current

IEBO

nA

VEB=5V, IC=050

DC current gainCollector-emitter saturation voltage

Base-emitter saturation voltage

Conditions

MinhFE1VCE=1V,IC=0.1mA40hFE2

VCE=1V,IC=1mA

70

hFE3

VCE=1V,IC=10mA

100hFE4

VCE=1V,IC=50mA

60hFE5

VCE=1V,IC=100mA

30TYP

Max

300

V

IC=10mA,IB=1mA

0.2

V

IC=50mA,IB=5mA

0.3

V

IC=10mA,IB=1mA

V

IC=50mA,IB=5mA
VCE=20V,IC=20mA,f=100MHz

VCE(sat)

0.65

0.85

VBE(sat)Transition frequency

fTMHz

Delay Timetd

ns

Rise Time

trns

Storage Timetsns

Fall Timetf

ns

Output capacitance

CobpF

0.95
300

VCC=3V, IC=10mA,
VBE=0.5V, IB1=1mA

VCC=3V, IC=10mA,
IB1=-IB2=1mA
VCB=5V,IE=0A,f=1MHz

353520050
42/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

MMDT3946■TR2 PNP Pin3、4、5 Maximum Ratings (Ta=25℃ Unless otherwise specified）
Item

SymbolUnit

Conditions

Value

Collector-Base Voltage

VCBO

V

IC=-10μA,IE=0-40

Collector-Emitter Voltage

VCEO

V

IC =-1mA,IB=0-40

Emitter-Base Voltage

VEBO

V

IE=-10μA,IC=0-5Collector Current

ICmA-200Total Device Dissipation

PCmW200Junction Temperature

Tj℃150Storage Temperature

TSTG℃-55 to +150

■TR2 PNP Pin3、4、5 Electrical Characteristics (Ta=25℃ unless otherwise specified)
Item

SymbolUnit

Collector-base breakdown voltage

VCBOV

IC=-10μA,IE=0-40

Collector-emitter breakdown voltage

VCEO

V

IC =-1mA,IB=0-40

Emitter-base breakdown voltage

VEBO

V

IE=-10μA,IC=0-5

Collector-Base cut-off current

ICBOnA

VCB=-30V,IE=0-50

Emitter-Base cut-off current

IEBOnA

VEB=-5V,IC=0-50

DC current gainCollector-emitter saturation voltage

Base-emitter saturation voltageConditions

MinhFE1

VCE=-1V,IC=-0.1mA

40

hFE2

VCE=-1V,IC=-1mA

70hFE3

VCE=-1V,IC=-10mA

100

hFE4

VCE=-1V,IC=-50mA

60

hFE5

VCE=-1V,IC=-100mA

30TYP

Max

300

V

IC=-10mA,IB=-1mA

-0.25

V

IC=-50mA,IB=-5mA

-0.4

V

IC=-10mA,IB=-1mA

V

IC=-50mA,IB=-5mA
VCE=-20V,IE=10mA,f=100MHz

VCE(sat)

-0.65

-0.85

VBE(sat)Transition frequency

fTMHz

Delay Time

tdns

Rise Time

trns

Storage Timetsns

Fall Time

tfns

Output capacitance

CobpF

-0.95
250VCC=-3V, IC=-10mA, VBE=0.5V, IB1=-1mA

VCC=-3V,
IB2=-1mA

IC=-10mA,

IB1=-VCB=-5V,IE=0A,f=1MHz

35
35
22575
4.5

3/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

MMDT3946■ TR1 NPN Pin1、2、6 Characteristics (Typical)
Static Characteristic

DC Current Gain

20

10000.1mA

VCE= 1V
Ta=25℃

0.09mA

Ta= 125℃

150.07mA

DC Current Gain hFECollector Current Ic(mA)

0.08mA

0.06mA
0.05mA

100.04mA

Ta= 100℃
Ta= 25℃
Ta= ‐25℃

1000.03mA
50.02mA
Ib= 0.01mA
100010.1

2110100

Collector Current Ic(mA)

Collect‐Emitter Voltage VCE(V)

Base‐Emitter Saturation Voltage

Collector‐Emitter Saturation Voltage
11Base‐Emitter Voltage VBEsat(V)Collector‐Emitter Voltage VCEsat(V)

Ic:Ib=10:1
Ta=25℃

Ta= 125℃

0.1

Ta= 25℃

Ta= 100℃

Ta= ‐25℃

Ic:Ib=10:1
0.1

0.01
0.1

1

100.1

100

110100

Collector Current Ic(mA)

Collector Current Ic(mA)

Cob/Cib‐VCB/VEB

Base‐Emitter On Voltage
10100

fT=1MHz
Ta=25℃

10Capacitance C(pF)

Collector Current Ic(mA)

CibCob1

VCE= 1V
10.1
00.2

0.4

0.6

0.8

10.1

Base‐Emitter Voltage VBE（V）

110Reverse Voltage VR (V)4/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

MMDT3946■ TR2 PNP Pin3、4、5 Characteristics (Typical)
Static Characteristic‐ 20

DC Current Gain
1000

Ta=25℃‐ 0.1mA

Ta= 125℃‐ 0.08mA

DC Current Gain hFECollector Current Ic(mA)‐ 0.09mA

VCE= ‐1V
Ta=25℃‐ 0.07mA‐ 0.06mA‐ 10‐ 0.05mA‐ 0.04mA

Ta= 100℃
Ta= 25℃
Ta= ‐25℃

100‐ 0.03mA‐ 0.02mA
Ib= ‐ 0.01mA
100‐1Collect‐Emitter Voltage VCE(V)

0‐2‐1‐ 100

Base‐Emitter Saturation Voltage

Collector‐Emitter Saturation Voltage‐1Base‐Emitter Voltage VBEsat(V)‐ 1Collector‐Emitter Voltage VCEsat(V)‐ 10Collector Current Ic(mA)

Ta= 100℃
Ta= 125℃‐ 0.1

Ta= ‐25℃

Ta= 25℃
Ic:Ib=10:1

Ic:Ib=10:1‐ 0.1‐ 0.01‐1‐ 10Collector Current Ic(mA)‐1‐ 100

Base‐Emitter On Voltage‐ 10Collector Current Ic(mA)‐ 100

Cob/Cib‐VCB/VEB‐ 100

10fT=1MHz
Ta=25℃

Capacitance C(pF)

Collector Current Ic(mA)

Cib‐ 10Cob

VCE= ‐1V
1‐ 10‐ 0.2‐ 0.4‐ 0.6
Base‐Emitter Voltage VBE（V）‐ 0.8‐1‐ 0.1‐1‐ 10Reverse Voltage VR (V)5/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

MMDT3946■SOT-363 Package Outline Dimensions■SOT-363 Soldering Footprint

Unit：mm

6/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.comMMDT3946
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves theright to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used withequipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safetydevices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper useof sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

7/7
S-S3307
Rev.1.1,26-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com