Introductory Material
Direct Evaluation for Solid State Drive

SMART TESTER for PCIe Series
EDSFF (E1.S, E1.L, E3.S) Supported.
SMART TESTER for PCIe G4

SMART TESTER for PCIe

【 Support Interface PCIe Gen 4 x 4 Lane 】【 Support Interface PCIe Gen 3 x 4 Lane 】

NVMe 1.4

1

Example：Performance Evaluation, PCIe Gen3 vs Gen4 SSD
IOPS

PCIe Generation3_M.2 SSD_TLC (1TB)

1,200,000

Sequential Write

1,000,000

Sequential Read

Random Write

Random Read

800,000
600,000
400,000
200,000
0QD= 14Block=81632

1481632

148KiB4KiB

81632

1416KiB

81632

1432KiB

81632

1481632

14128KiB

64KiB

81632256KiB

Q Depth / Block

PCIe Generation4_M.2 SSD_TLC (1TB)

IOPS
1,200,000

Sequential Write

1,000,000

Sequential Read

Random Write

Random Read

We recommend the PCIe Generation 4 Tester. Recent SSDs have become high performance.
Future M.2 and EDSFF (E1.S, E1.L) Type SSDs are expected to have even higher performance.
HIROTA's Gen4 Tester is the best model for high performance measurements.

800,000
600,000
400,000
200,0000

QD= 1Block=

484KiB

1632

1488KiB

1632

14816KiB

1632

14832KiB
Q Depth／Block

1632

14864KiB

1632

14816128KiB

3214816256KiB 232

Example：Performance Evaluation PCIe Generation 4 SSD
IOPSA Model_1TB

1,200,000

B Model_1TB

IOPS
1,200,000

Sequential Write

Sequential Read

Random Write

Sequential Write

Random Read

1,000,000

1,000,000

800,000

800,000

600,000

600,000

400,000

400,000

200,000

200,000

Sequential Read

Random Write

Random Read00

QD= 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32
8KiB
16KiB
32KiB
4KiB
64KiB
128KiB
256KiB
Block=Q Depth／BlockIOPS

Q Depyh / BlockIOPSC Model_1TB

1,200,000

QD= 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32
8KiB
16KiB
32KiB
4KiB
64KiB
128KiB
256KiB
Block=D Model_1TB

1,200,000
Sequential Write

Sequential Read

Random Write

Random Read

Sequential Write1,000,000

1,000,000

800,000

800,000

600,000

600,000

400,000

400,000

200,000

200,000

0

Sequential Read

Random Write

Random Read0

QD= 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32
32KiB
128KiB
8KiB
4KiB
16KiB
64KiB
256KiB
Block=Q Depth / Block

QD= 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32 1 4 8 16 32
8KiB
16KiB
32KiB
4KiB
64KiB
128KiB
256KiB
Block=Q Depth/BlockSMART TESTER for PCIe G4 Variation
Size ： Not include protrusions➢ One Unit Type
Model ： H4PC-P4

Excellent compact design with built-in air cooling fan for SSD.
【 Support Foam Factor 】
Standard ： Add in Card
Option ： M.2, U.2, CFexpress cardSize： W460 x D420 x H350mm
M.2 SSD（2280）Connection Image➢ Separate TypeThe control box and drive unit are separated.
Excellent compact design with built-in
air cooling fan for SSD.

~Not include conversion adapter ~【Drive Units】➢ Add in Card Base Type
Model ： H4PS-P4➢ EDSFF TypeModel ： H4PE-P4

There are two type s of drive units that connect to the control box.

【Control Box】
(Tester)

M.2 SSD（2280）Connection Image

Size ： W340 x D325 x H180mm

Size ： W282 x D330 x H300mm

4Size ： W300 x D440 x H300mm

SMART TESTER for PCIe G4 Variation
Model ： H4PS-P4➢ Add in Card Base Type Drive Unit

Separate Type Image
Model ： H4PE-P4➢ EDSFF Type Drive Unit ～SSD（E1.L) connected image~
Drive Unit

～SSD non connected image~Control Box(Tester)

Drive Unit
~M.2 SSD connection image~Control Box Size： W340 x D325 x H180mm(Not include protrusions）
Drive Unit Size ： W282 x D330 x H300mm(Not include protrusions）【Drive Unit】
Control Box
Power supply: AC95-242V(Tester)Control Box Size： W340 x D325 x H180mm(Not include protrusions）
Drive Unit Size ： W300 x D440 x H300mm(Not include protrusions）【 Drive Unit Structural Image 】【 Support Foam Factor 】【 Support Foam Factor 】
Standard ： Add in Card
Option ： M.2, U.2, CFexpress card
~Not include conversion adapter ~Standard

Built-inBack Plane Board
AICConversion Adapter

Each fixture can be set in the chamber to evaluate the temperature and humidity environment.

EDSFF【 E1.S, E1.L, E3.S 】

EDSFF Drive Unit Connection Image
E1.S
E1.L
Connection image with adapter

E3.S

Connection image with adapter

Connection image with adapter【Front Panel Open Style】【Front Panel shut Style】
E1.L

E1.S

E3.S

When user connect the E1.L SSD andshut the front panel, the SSD pops out about 10 cm.

【SSD Hold Metal】
E1. L
Thickness: 9.5mm & 18mm

E1. S
Thickness: 9.5mm & 25mm

SSD slide rail side

SSD slide rail side

Back side※ Various adapters can be used on all ports.

Back side

E1. SThickness: 5.9mm & 8.01mm
SSD slide rail side

Back side

Various adapters for 4 ports are standard accessories.

E3. SThickness: 16.8mm
SSD slide rail side

Back side
Housing material : Stainless steel (SUS430) without painting.

SMART TESTER for PCIe G3 Variation
EDSFF Drive Unit connection image.

➢ Control Unit
User can select various combinationsof the Drive Unit for control unit.
Size ： W250 x D330 x H140mm
Size ： Not include protrusions➢ Drive Unit (Fixture) Lineup【 Horizontal Insertion Type 】【 Multi Angle Type 】【 M.2 Type 】【 EDSFF Type 】

for M.2 SSD(2230-22110)

for E1.S, E1.L, E3.SStandard ： Add in Card
Option ： M.2, U.2, CFexpress card
~Not include conversion adapter ~Size ： W250 x D230 x H160mm

Size ： W370 x D312 x H520mm

Size ： W395 x D158 x H47mm

Size ： W300 x D440 x H300mm

Customer introduction

8

Access Work Load ＆ Evaluation
Issue a corresponding command for each protocol and execute flexible combination evaluation.

Professional function

Flexible combination
DataAccess
PatternWrite
Data
PatternAccess
AreaStandardization Test
Block
LengthAccess
Cycle

➢

JEDEC218/219
・Endurance・Data Retention・Read Disturb➢

LaneControl
Access

Evaluation

TBW Test (Enterprise & Client)

SNIA SSS PTS (Enterprise & Client)
Performance Test for Steady State

AccessTime

Vendor Unique Test
Cash
On-OffQueuing
Depth➢・Performance ・ Endurance ・ Power Management
・Low Power Management

Generation

ControlAccess

Erase
TRIM

Flexibility Test

➢Visualization by graph display
・Performance・Power

9Overview of the evaluation items
Basic Function➢ SMART Information (User thresholddetermination)➢ Identify Infomation➢ Secure erase(Enhanced) Sanitize TRIM
➢ Queuing Depth

Evaluation & Analysis
Display graphPerformance➢ SNIA SSS PTS Enterprise & Client
Measurement and report generation➢ Generation & Lane control Access➢ Write & Read & Compare (Any access workload）➢➢➢➢

Display graph

Reliability
Power Management

Voltage margin（Degradation control is possible）
Limit of voltage drop
Power on / off immunity
Power shutdown（Guarantee of the write data）

Auto saved data(Summary & csv data)
The combination of workload can be changed freelyEndurance➢ TBW(JEDEC 218/219) Enterprise & Client
Endurance, Read disturb, Data Retention➢ Used percentage check

Display graph

Power Efficient
Low Power Management➢ CLKREQ# (L0, L1, L1.2)➢ Consumption current measurement(Measurement resolution: µAmpere_OP)10Tester Basic Specifications
SMART TESTER for PCIe
（Generation 3）

Item
Modeｌ

H4PR-P3F4Interface

PCIe Gen-1（2.5Gbps） ～ Gen-3 （8.0Gbps）

SMART TESTER for PCIe G4（Generation 4）
H4PC-P4

H4PS-P4

H4PE-P4

PCIe Gen-1 ～ Gen-4 （16Gbps） 4 Lane ～ Controllable ～Lane

4 Lane ～ Controllable ～Connect port
Protocol Ver.
Memory4port/Tester Expandable with Cascade Connection
NVMe 1.4

NVMe1.3, AHCI
8GB/Tester,

32GB/Tester,I/F buffer：64MB/port

I/F buffer ： 4GB/port

SM Busー〇〇〇Hot plug〇〇〇〇UART〇〇〇〇

Standard ： Add in Card Type Connecter

Foam Factor

OP ： U.2, M.2(2230-22110), CFexpress card

Power Supply
Environment
Outer
Dimensions【Memo】EDSFF （L1.S, L1.L, E3.S)

AC95～242V 47/63Hz
Ambient Temperature: 20℃～40℃,
W370*D310*H530mm(Multi angle model)

Ambient Humidity :20～80%RH, * No condensation exists.

W420*D460*H350mm

1. Not include OP conversion adapter .
2. The FESFF Drive Unit is also available in Gen 3 Type. Please contact us for details.

Tester：W340*D325*H180mm
D U：W282*D330*H300mm

Tester：W340*D325*H180mm
DU：W300*D440*H300mm

11～Specifications are subject to change without notice～

Control Power Management
項目概要

Drive Power Supply+12V Variable range
Voltage accuracy+3.3V Variable range
Voltage accuracy::::

Detection of Excessive Drive
Supply Voltage∔12V+3.3V

Power off the detect port drive, when detect the overvoltage detection.

Measurement of Drive Power
Supply Voltage+12V measure range 0.0V to 15.0V measure accuracy ±3%F.S+3.3V
0.0V to 5.0V measure accuracy ±3%F.S
Resolution : 3.3V≒3.5mV 12V≒7.9mV
Sampling rate
125μsec to 0.2sec (125μs step)
Sampling memory
65,520 data / port

Measurement of Drive Power
Supply Current+12V measure range 0.0A to 4.0A measure accuracy ±3%F.S+3.3V
0.0A to 5.0A measure accuracy ±3%F.S
Resolution : 3.3V≒2.6mA 12V≒2.0mA
Sampling rate
125μsec to 0.2sec (125μs step)
Sampling memory
65,520 data / port

CLKREQ＃L1.2 level ⇒ Micro current measurement: µA（Option)(Power saving transition level: L0➢L1➢L1.2 ）15.2V± 3%
4.6V± 3%

8.0V to 14.5V (20mV step pitch)±100mVMax current : 3.5A
2.0V to 4.0V (10mV step pitch)±50mV
Max current : 4.2A

12

Example of Current & Voltage Measurement

Wave at Power ON

Wave at Power OFF - ON13

Efficient power evaluation
Low Power Measurement 【Sample】 CLKREQ

PCIe Type14

Efficient power evaluation【処理内容】 Idle ⇒ L1 ⇒ L1.1 ⇒ L1.2 ステートの遷移と電流値を確認

Resolution : µA

【 Summary Sample-1 】【 Graph Sample-2】【 Summary Sample-2 】【 Graph Sample-2】15

Power stress Test script➢ Assume a bad power supply, oscillation, noise, etc., and execute a simulation test.
➢ Supports toggle function and up / down slope control function.
➢ The measured data can be graphed in real time and confirmed.
◆ Voltage margin +12V Variable range+3.3V Variable range: 8.0V to 14.5V (20mV step pitch): 2.0V to 4.0V (10mV step pitch)

Sample Graph

Write/Readaccess16Example of Benchmarking Evaluation by Variable Voltage

A ModelDrive

Benchmarking withthe same condition

B Model Drive

Capable of measuring the current while varying the voltage.
➢ B Model was reset by the voltage drop under unstable voltage environment.
◆ Voltage margin ・+12V Variable range : 8.0V to 14.5V (20mV step pitch)

・+3.3V Variable range : 2.0V to 4.0V (10mV step pitch)
17

TBW Test by JESD218. Standard.
Endurance Testfor Enterprise Model

Flexible Ratio AccessStandard Ratio Access(Original Script)

Access conditions arechangeable.
◆ Transfer Brock Length◆ Access share(by random Access)for Client Model
The test scripts are available in accordance with JEDEC Standard, 【JESD 218A】

Data Retention Test, Read Disturb Test, the script is already prepared.
【 Ref 】 Data Retention Test is keep it in a temperature control Chamber without power supply temperature: 125 ℃
Leave time: client SSD = 336 H
Enterprise SSD = 504 H

18

Percentage Used vs Performance
TBW Predictive Evaluation

NVMe xxx Model 512GB Sample Graph【Writing capacity prediction】【Writing time prediction】
100％9080706050403020101900100200

300

400500

600

700

Ｈ800

Performance (IOPS) vs Power measurement
NVMe xxx Model Sample Graph

NVMe xxx Model Sample Graph
IOPS

IOPS

10,000

2,000

9,000

1,800
ｍA

8,000

1,600

7,000

1,400

6,000

1,200

5,000

1,000

4,000

800

3,000

600

2,000

400

1,000

200

0ｍA

00

200

400

600

800

100020主な機能-9
テスト 項目IOPS
IOPS Test

TPThroughput Test

Latency
Latency Test

Write Saturation
Write Saturation Test

HIR
Host Idle Recovery Test

XSR
Cross Stimulus Recovery Test

CBWComposite Block Size Workload Test

DIRTH
Demand Intensity / Response Time Histogram Test

SNIA SSS PTS
概 要
We measure and analyze IOPS (Input / Output per second) down to Steady State
based on seven kinds of Read/Write combinations and eight kinds access block sizes(=56 kinds combinations)
We measure and analyze the throughput down to Steady state in two block sizes of1024KiB and 128KiB.
We measure and analyze the Average Latency and Maximum Latency in three kinds
combinations of Read / write and three kinds access block sizes.
We measure and analyze IOPS drop compare with writing time or TGBW(Total GiB
Byte Written). The evaluation starts from 24 hours after FOB state or after achieved
four times SSD capacity writing.
We measure SSD performance affection of continuous writing performance in small
blocks (4KiB Random) by host IDLE time.
We measure and analyze the performance affection at write access switch timingfrom SEQ(1024KiB) to RND(8KiB) and from RND(8KiB) to SEQ(1024KiB).
We measure the performance under mixed ten work loads which is not simple
transfer length like RND 4KB.
We can create the histogram of IOPS vs operating time related to two kinds work
21loads.

SNIA SSS PTS【 About SNIA】
SNIA is Storage Networking Industry Association which is the largest storage network industry association.
【 SSS PTS 】
SSS PTS : Solid State Storage Performance Test Specification
Measure the performance of the SSD that reached steady state with the specified workload.
Outputs the obtained measurement result in specified report format.

【 Merit 】
Objective comparative evaluation of SSDs with world standard specifications
It can see the marginal performance of the SSD in just one day
It can objectively compare and evaluate SSD according to the prescribed method
Automated by dedicated script and it can be evaluated efficiently
Various result report such as three dimensional graph can be issued automatically

22

SNIA SSS PTS の評価事例

Benchmark【 Write Saturation Test 】

FOB( Flesh Out of Box )【連続書込み容量⇒Stady State】

Gen4_TLC

Gen4 TLC : 1,360GB
Gen3 TLC : 1,220GB
Gen3 MLC : 600GB
Gen3 QLC : 180GB

Transition
Gen3_TLC

Steady State

Gen3_QLC

Gen3_MLC【 Host Idle Recovery Test 】【 Cross Simulation Recovery Test 】

300

for Garbage Collection
Repeat 5 sec. work load
writing and 5 sec. idle

SEQ/1024KiB

RND/8KiB

Idle 15 sec.

Idle 25 sec
Idle 50 sec

Throughput (MB/sec)

250

Idle10 sec

IOPS【 IOPS Test 】

20015010050

Time (Minutes)

00

23500

1000

1500

Thank you.

Please feel free to contact us.
【 Sales representative 】

Yoshie Ito（Ms.）
High Quality & Total Technology

Hirota Seisakusho Limited.
ADD：3954-13, Oaza-ogawara, Suzaka-shi, Nagano-ken, 382-0005, Japan
Tel ： 026-245-1212

Fax： 026-246-1474

E mail ： itou@hirotass.co.jp

CFA
CompactFlash Association24