836;36 ࢆ⏝࠸ࡓ % ࢻ࣮ࣉ㉸ࢼࣀᚤ⤖ᬗࢲ࢖ࣖࣔࣥࢻ⭷࣓ࢱࣝ⏺㠃ࡢࢩࣙࢵࢺ࣮࢟㞀ቨ㧗ࡉホ౯ⰼ⏣ᑛᚨ ࠊ኱᭤᪂▮ ࠊྜྷṊ๛ ஑ᕞ኱Ꮫ኱Ꮫ㝔⥲ྜ⌮ᕤᏛᗓ ࠊᅜ❧◊✲㛤Ⓨἲே⏘ᴗᢏ⾡⥲ྜ◊✲ᡤ ㉸ࢼࣀᚤ⤖ᬗࢲ࢖ࣖࣔࣥࢻ⭷ࡣࠊsp2/sp3 ᵓ㐀ࢆࣇࣞ࢟ࢩࣈࣝ࡟ࢥࣥࢺ࣮ࣟࣝྍ⬟࡞࣮࢝࣎ࣥ⣔ⷧ⭷࡛ࠊࢲ࢖ࣖࣔࣥࢻཬࡧ DLC ࡢ୰㛫ⓗ࡞ᵓ㐀ࢆ᭷ࡋ࡚࠸ࡿࠋ༢⤖ᬗࢲ࢖ࣖࣔࣥࢻ/࣓ࢱࣝ⏺
㠃ࡣࠊḞ㝗‽఩࡟ࡼࡾࣆࢽࣥࢢࡉࢀ࡚࠸ࡿࢣ࣮ࢫࡀᑡ࡞ࡃ࡞࠸ࡀࠊࡑࡢ୰㛫࡟㉸ࢼࣀᚤ⤖ᬗࢲ࢖ࣖࣔࣥࢻᒙࢆᤄධࡍࡿࡇ࡜࡟ࡼࡾࠊࣆࢽࣥࢢࡢゎᾘࡸࢩࣙࢵࢺ࣮࢟㞀ቨࡢ⮬ᅾไᚚࡀྍ⬟࡜࡞ࡿྍ⬟ᛶࢆ⛎ࡵ࡚࠸ࡿࠋᮏⓎ⾲࡛ࡣࠊࡑࡢᇶ♏≉ᛶ࡜ࡋ࡚㉸ࢼࣀᚤ⤖ᬗࢲ࢖ࣖࣔࣥࢻ/࣓ࢱࣝ⏺㠃ࡢ㞀ቨ㧗ࡉࢆ UPS,XPS ࡛ㄪ࡭ࡓࡢ࡛ሗ࿌ࡍࡿࠋ


836;36ࢆ⏝࠸ࡓ%ࢻ࣮ࣉ㉸ࢼࣀᚤ⤖ᬗࢲ࢖ࣖࣔࣥࢻ⭷࣓ࢱࣝ⏺㠃ࡢࢩࣙࢵࢺ࣮࢟㞀ቨ㧗ࡉホ౯䕿ⰼ⏣ ᑛᚨ1䠈኱᭤ ᪂▮2䠈ྜྷṊ ๛1(1.஑ᕞ኱Ꮫ䠈2.⏘⥲◊)
E-mail: takanori_hanada@kyudai.jp⣸እ⥺ග㟁Ꮚศගศᯒἲ炷UPS烉Ultraviolet Photoelectron
2000
Spectroscopy炸S81&'D&+‫ۯ‬๣Կ
0HWDO
UPS, Au on pítype UNCD/aíC:H䛿䛨䜑䛻 䠄UNCD/a-C:H⭷䛻䛴䛔䛶䠅䝎䜲䝲䝰䞁䝗≧Ⅳ⣲
DLC (a-C:H)䝘䝜ᚤ⤖ᬗ䝎䜲䝲䝰䞁䝗NCDከ⤖ᬗ䝎䜲䝲䝰䞁䝗ᙧែ㠀ᬗ㉁䝘䝜ᚤ⤖ᬗከ⤖ᬗ༢⤖ᬗ␗✀ᇶᯈ䜈䛾ᡂ㛗䖂ᐜ᫆䕿ྍ⬟䕧ᅔ㞴㽢ᴟ䜑䛶ᅔ㞴༢⤖ᬗ䝎䜲䝲䝰䞁䝗ᗘᏳᐃᛶ㽢䕿䖂䖂䝞䞁䝗䜼䝱䝑䝥㻨㻌㻡㻚㻡㻌㼑㼂㻡㻚㻡㻌㼑㼂㻌㻫㻡㻚㻡㻌㼑㼂㻡㻚㻡㻌㼑㼂⤯⦕ᛶ䕿䕿䖂䖂⭷䛾ᖹ⁥ᛶ䖂䖂㽢䖂⇕ఏᑟᗘ㽢䕿䖂䖂

UNCD

Intensity (cps)䜹䞊䝪䞁⣔ᮦᩱ䛾✀㢮䛸≉ᚩUNCD

Grain boundary

a-C:HUNCDਇ‫ۯ‬६Ғ() ʖ (9ʻ  H9(&Bare filmС01000()(90.26 eVUNCD

1 nm(&V

HRTEM image of UNCD/a-C:H films㏱㐣ᛶ䕿䕿䖂Ref) T. Hara et al., Diamond Relat. Mater.
15 (2006) 649

䖂䞉㧗í1䞉B䠈N䝗䞊䝥䛻䜘䛳䛶ྛ䚻p, nᆺ໬䛜ྍ⬟01234

С%(&V0HWDO(&V0HWDO  (&V5Energy below Fermi level (eV)Ᏻᐃᛶ䛜ᙉ䛔

䞉⢏⏺䛻㉳ᅉ䛩䜛ග྾཰䜢☜ㄆ&V0⢏ᚄ10 nm௨ୗ䛾㉸䝘䝜ᚤ⤖ᬗ䝎䜲䝲䝰䞁䝗(UNCD)䜢ྵ䜣䛰ΰ┦⭷≉ᚩ()(9(&V0HWDO  (&VUPS spectra at SAGA-LS BL12ග䞉㟁Ꮚ≀ᛶ䛜⢏⏺䛻኱䛝䛟౫Ꮡ⭷/䝯䝍䝹⏺㠃䛾䝞䞁䝗䜰䝷䜲䝯䞁䝖ᴫ␎ᅗග㟁Ꮚศගศᯒἲ炷XPS: X-ray Photoelectron Spectroscopy炸䐟 Au/(p-UNCD/a-C:H)䛣䜜䜎䛷䛾◊✲䛚䜘䜃ㄢ㢟Responsivity (A/W)

101010–1–2bias = 5 Vሺɉሻ ൌ10䝸䝣䝖䜸䝣䛻䜘䜚స〇䛧䛯䛟䛧ᆺ㟁ᴟbias = 1 V–3 െ 



–4

200

400

600

800

1000

1200

Wavelength (nm)ศගឤᗘ䝇䝨䜽䝖䝹

MSM ᵓ㐀• 㼁㻺㻯㻰㻛㼍㻙㻯㻦㻴༢య䛷䛾ග᳨ฟ䛻䛿㻹㻿㻹 㻔㻹㼑㼠㼍㼘㻙㼟㼑㼙㼕㼏㼛㼚㼐㼡㼏㼠㼛㼞㻙㼙㼑㼠㼍㼘㻕 ᵓ㐀䛜᭷ຠ䛷䛒䜛䛜䠈⭷㻛䝯䝍䝹⏺㠃䛾≉ᛶ䛿䜎䛰䜘䛟⌮ゎ䛥䜜䛶䛔䛺䛔䠊• ㉸䝘䝜ᚤ⤖ᬗ䝎䜲䝲䝰䞁䝗⭷䛿䚸㼟㼜㻞㻛㼟㼜㻟ᵓ㐀䜢䝣䝺䜻䝅䝤䝹䛻䝁䞁䝖䝻䞊䝹ྍ⬟䛺䜹䞊䝪䞁⣔ⷧ⭷䛷䚸䝎䜲䝲䝰䞁䝗ཬ䜃㻰㻸㻯䛾୰㛫ⓗ䛺ᵓ㐀䜢᭷䛧䛶䛔䜛䠊• ༢⤖ᬗ䝎䜲䝲䝰䞁䝗㻛䝯䝍䝹⏺㠃䛿䚸Ḟ㝗‽఩䛻䜘䜚䝢䝙䞁䜾䛥䜜䛶䛔䜛䜿䞊䝇䛜ᑡ䛺䛟䛺䛔䛜䠈䛭䛾୰㛫䛻㉸䝘䝜ᚤ⤖ᬗ䝎䜲䝲䝰䞁䝗ᒙ䜢ᤄධ䛩䜛䛣䛸䛻䜘䜚䠈䝢䝙䞁䜾䛾ゎᾘ䜔䝅䝵䝑䝖䜻䞊㞀ቨ䛾⮬ᅾไᚚ䛜ྍ⬟䛸䛺䜛ྍ⬟ᛶ䜢⛎䜑䛶䛔䜛䠊• ᮏⓎ⾲䛷䛿䠈䛭䛾ᇶ♏≉ᛶ䛸䛧䛶㉸䝘䝜ᚤ⤖ᬗ䝎䜲䝲䝰䞁䝗㻛䝯䝍䝹⏺㠃䛾㞀ቨ㧗䛥䜢㼁㻼㻿㻘㼄㻼㻿䛷ㄪ䜉䛯䛾䛷ሗ࿌䛩䜛䠊䐠 Cu/(p-UNCD/a-C:H)ᐇ㦂᪉ἲ
H2 Gasྠ㍈ᆺ䜰䞊䜽䝥䝷䝈䝬ሁ✚ (CAPD) ἲ

Base pressure < 103 Pa< ≀⌮Ẽ┦ྜᡂ (PVD) ἲ䐡 WC/(p-UNCD/a-C:H)

฼ⅬSub. Temp.
550 qC䞉㠀ᖹ⾮䛜ᙉ䛔ᡂ⭷ἲ䞉ሁ✚㏿ᗘ䛜㏿䛔䞉䝍䞊䝀䝑䝖䛻୙⣧≀䜢ྵ䜎䛫䜛䛣䛸䛷≉ᐃ䛾୙⣧≀䛾䝗䞊䝢䞁䜾䛜ྍ⬟䞉ప 䛷䛾ᡂ㛗䛜ྍ⬟

Coaxial arc plasma gun䞉䝅䞊䝕䜱䞁䜾ฎ⌮䛜୙せ䞉Ỉ⣲䛺䛧䛷䛾UNCD䛾᰾⏕ᡂ䛜ྍ⬟AC

B 1at.% blended graphite target⭷䛾᢬ᢠ⋡䠖U = 10-6 :䞉cm

Power
100 V

Capacitor
720 PF

SubstrateHolder

T
Trigger box
5 HzController

CAPG⾲ 㔠ᒓ䛾௙஦㛵ᩘ䛸䝅䝵䝑䝖䜻䞊㞀ቨ㧗䛥䛾㛵ಀᐇ㦂⤖ᯝ⾲㠃㓟⣲䛾ᙳ㡪䜰䞊䜽䜺䞁䛻䜘䜚ሁ✚䛧䛯B 0.5at.% doped UNCD⭷䛻㛵䛧䛶䠈
XPS C1s䝢䞊䜽䛛䜙䝣䜱䝑䝔䜱䞁䜾䛻䜘䜚ศ㞳䛧䛯C-C䛾䝢䞊䜽఩⨨䛿䠈Au, Cu, WC䝁䞁䝍䜽䝖䛻䜘䜚䛭䜜䛮䜜䠈+0.2712, +0.057, -0.5245 eV䝯䝍䝹↓䛧䛾䝧䜰䝣䜱䝹䝮䛻ᑐ䛧䛶䝢䞊䜽䝅䝣䝖䛩䜛⤖ᯝ䛸䛺䛳䛯䠊

XPS C 1s Au on pítype UNCD

Bare FilmCíC

Intensity (cps)Intensity (cps)[Arࢫࣃࢵࢱᚋ on píUNCD] BE = 284.7 (eV)[Arࢫࣃࢵࢱ๓ on píUNCD] BE = 284.7 (eV)

䜎䛸䜑•

CíO
CíOíC

•

C=O
COOH

0294

292

290

288

•286284282

Binding Energy (eV)Peak
Position (eV) Area FWHM (eV) %GL (%)
C-C
284.46348405
1.532
20C-O, C-O-C 285.567
12750
1.940
20C=O, COOH 287.933
7118
4.353
20280

290

288286284282280•㻭㼞 䝇䝟䝑䝍䛻䜘䜛⾲㠃㓟໬ᒙ䛾㝖ཤ䛾๓ᚋ䛷䠈㼄㻼㻿㻌㻯㻝㼟 䝇䝨䜽䝖䝹䜢ẚ㍑䛩䜛䛣䛸䛻䜘䜚䠈⾲㠃㓟⣲䛾ᙳ㡪䛻䜘䛳䛶䝢䞊䜽䝅䝣䝖㻔䝞䞁䝗䝧䞁䝕䜱䞁䜾㻕䛜㉳䛣䛳䛶䛔䛺䛔䛣䛸䜢☜ㄆ䛧䛯䠊㻭㼡䠈㻯㼡㻌䝁䞁䝍䜽䝖䛻䜘䜚䠈㻯㻝㼟 䝇䝨䜽䝖䝹䛿㧗䜶䝛䝹䜼䞊ഃ䛻䝅䝣䝖䛧䠈䛣䛾䛣䛸䛛䜙㼁㻺㻯㻰㻛㼍㻙㻯㻦㻴㻌䛸 㻭㼡㻌⏺㠃䛷䛿䝎䜴䞁䝧䞁䝕䜱䞁䜾䛜⏕䛨䛶䛔䜛䛸⪃䛘䜙䜜䜛䠊㼃㻯㻌䝁䞁䝍䜽䝖䛻䜘䜚䠈㻯㻝㼟 䝇䝨䜽䝖䝹䛿ప䜶䝛䝹䜼䞊ഃ䛻䝅䝣䝖䛧䠈䛣䛾䛣䛸䛛䜙 㼁㻺㻯㻰㻛㼍㻙㻯㻦㻴㻌䛸 㻭㼡㻌⏺㠃䛷䛿䜰䝑䝥䝧䞁䝕䜱䞁䜾䛜⏕䛨䛶䛔䜛䛸⪃䛘䜙䜜䜛䠊㻮䝗䞊䝥㉸䝘䝜ᚤ⤖ᬗ䝎䜲䝲䝰䞁䝗⭷䛻ᑐ䛧䛶䠈௵ព䛾௙஦㛵ᩘ䜢᭷䛩䜛ᡤᐃ䛾㔠ᒓ䜢㑅ᐃ䛧䠈䝁䞁䝍䜽䝖䜢ᙧᡂ䛩䜛䛣䛸䛷䠈⭷⾲㠃䜢✵ஈ໬䛧䛯䝅䝵䝑䝖䜻䞊䝁䞁䝖䝍䜽䝖䛸䠈䜸䞊䝭䝑䜽䝁䞁䝍䜽䝖䛾ᙧᡂ䜢䝁䞁䝖䝻䞊䝹䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛䛣䛸䛜♧၀䛥䜜䛯䠊Ar䝇䝟䝑䝍䛻䜘䜚⾲㠃㓟໬ᒙ䜢㝖ཤᚋ䠈
XPS C1s䝇䝨䜽䝖䝹䜢ẚ㍑䛩䜛䛸䠈࠙ㅰ㎡ࠚᮏ◊✲࡟࠾ࡅࡿ836;36ࡢᐇ㦂ࡣ㸪బ㈡┴❧஑ᕞࢩࣥࢡࢺࣟࣥග◊✲ࢭࣥࢱ࣮%/࡟࡚㸪ㄢ㢟␒⾲㠃㓟⣲䛾ᙳ㡪䛻䜘䛳䛶䝢䞊䜽䝅䝣䝖ྕ6࡛ᐇ᪋ࡉࢀࡓ㸬ࡲࡓᮏ◊✲ࡢ୍㒊ࡣ -636 ⛉◊㈝ + ࡢຓᡂࢆཷࡅࡓ㸬➨୍➹⪅ࡣ㸪஑(䝞䞁䝗䝧䞁䝕䜱䞁䜾)䛜㉳䛣䛳䛶䛔䛺䛔䛣䛸䜢☜ㄆ䠊 ᕞ኱Ꮫ ༤ኈㄢ⛬ᩍ⫱࣮ࣜࢹ࢕ࣥࢢࣉࣟࢢ࣒ࣛ ࢢ࣮ࣜࣥ࢔ࢪ࢔ᅜ㝿ᡓ␎ࣉࣟࢢ࣒ࣛࡢᨭ᥼ࢆཷࡅ࡚࠸ࡿ㸬