S-5718 Series
www.ablic.com
www.ablicinc.com

LOW VOLTAGE OPERATIONOMNIPOLAR / UNIPOLAR DETECTION TYPE
HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION© ABLIC Inc., 2017

Rev.1.1_01

This IC, developed by CMOS technology, is a high-accuracy Hall effect switch IC with switchable detection pole functionthat operates at a low voltage and low current consumption.
The output voltage changes when this IC detects the intensity level of magnetic flux density of the polarity according to the
input pin status. The inclusion of a switchable detection pole function makes it possible to reduce the number of parts andrealize a variety of different systems by using this IC with a magnet. High-density mounting is possible by using the supersmall SNT-4A package.
Due to its low voltage operation and low current consumption, this IC is suitable for battery-operated portable devices. Its
high-accuracy magnetic characteristics also allow this IC to reduce operation dispersion in magnet combination systems.
ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall effect ICs forcustomer systems. Our magnetic simulation service will reduce prototype production, development period and development
costs. In addition, it will contribute to optimization of parts to realize high cost performance.
For more information regarding our magnetic simulation service, contact our sales office.

 Features
 Switchable detection pole function:*1
 Output logic : Output form: Magnetic sensitivity (hysteresis width)*1:*1

 Operating cycle (current consumption) :*2

 Power supply voltage range : Operation temperature range: Lead-free (Sn 100%), halogen-free

Omnipolar detection, S pole detection, N pole detection
Active "L"
Active "H"CMOS output
BOP = 1.8 mT typ. (BHYS = 0.7 mT typ.)
BOP = 3.0 mT typ. (BHYS = 0.8 mT typ.)
BOP = 3.0 mT typ. (BHYS = 1.3 mT typ.)
BOP = 4.5 mT typ. (BHYS = 1.0 mT typ.)
BOP = 4.5 mT typ. (BHYS = 2.5 mT typ.)tCYCLE = 102.1 ms typ. (IDD = 1.4 A typ.)tCYCLE = 50.5 ms typ. (IDD = 2.0 A typ.)tCYCLE = 5.7 ms typ. (IDD = 12.0 A typ.)VDD = 1.45 V to 3.6 V
Ta = 40°C to 85°C*1. The option can be selected.
*2. Power supply voltage range is different by optional combination.

 Applications
 Mobile phone, smart phone
 Notebook PC, tablet PC Wearable device
 Plaything, portable game
 Home appliance Package SNT-4A

1

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Block Diagram

VDD*1

Detection poleswitching circuitControl circuit

Chopping
stabilized
amplifier

SWP
*1

*1

VSS

*1. Parasitic diodeFigure 1

2

*1

OUT
*1

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Product Name Structure
1. Product nameS-5718

x

C

x

x

x

-

I4T1 U
Environmental codeU:
Lead-free (Sn 100%), halogen-free
Package abbreviation and packing specifications*1
I4T1: SNT-4A, Tape
Magnetic sensitivity*20:
BOP = 1.8 mT typ.
1:
BOP = 3.0 mT typ.
2:
BOP = 4.5 mT typ.
Output logic
L:
Active "L"
H:
Active "H"
Hysteresis width*2
S:Standard
W:
Wide
Output formC:
CMOS output
Operating cycle
A:
tCYCLE = 102.1 ms typ.
B:
tCYCLE = 50.5 ms typ.
C:
tCYCLE = 5.7 ms typ.

*1. Refer to the tape drawing.
*2. Magnetic sensitivity and hysteresis width combinations are as follows.
Hysteresis Width

Magnetic Sensitivity

S (Standard)

W (Wide)0 (BOP = 1.8 mT typ.)

BHYS = 0.7 mT typ.

1 (BOP = 3.0 mT typ.)

BHYS = 0.8 mT typ.

BHYS = 1.3 mT typ.

2 (BOP = 4.5 mT typ.)

BHYS = 1.0 mT typ.

BHYS = 2.5 mT typ.

2. Package
Table 1 Package Drawing Codes
Package Name
SNT-4A

Dimension

Tape

Reel

Land

PF004-A-P-SD

PF004-A-C-SD

PF004-A-R-SD

PF004-A-L-SD

3

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series

3. Product name list
Table 2
Product Name
S-5718CCWL1-I4T1U
S-5718CCSH0-I4T1U*1
S-5718CCSL0-I4T1U*1*1.

Operating Cycle(tCYCLE)

Output Form

Hysteresis Width(BHYS)

Magnetic
Sensitivity(BOP)

5.7 ms typ.

CMOS output Wide (1.3 mT typ.)

Active "L"

3.0 mT typ.

5.7 ms typ.
5.7 ms typ.

CMOS output Standard (0.7 mT typ.) Active "H"CMOS output Standard (0.7 mT typ.) Active "L"

1.8 mT typ.
1.8 mT typ.

VDD = 1.6 V to 3.6 V

Remark Please contact our sales office for products other than the above.

4

Output Logic

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Pin Configuration
1. SNT-4A
Table 3Top view
12

43

Figure 2

Pin No.
SymbolPin Description
1
VDD
Power supply pin
2
VSS
GND pinDetection pole switching pin*1
3
SWP
4
OUT
Output pin*1. For details, refer to "3. Basic operation" in " Operation".

 Absolute Maximum Ratings
Table 4
Item

SymbolApplicable Pin(Ta = 25°C unless otherwise specified)Absolute Maximum Rating
Unit

Power supply voltage
VDD
VSS  0.3 to VSS  7.0
V
Input voltage
VIN
SWP
VSS  0.3 to VDD  0.3
V
Output current
IOUT
OUT
1.0
mA
Output voltage
VOUTOUT
VSS  0.3 to VDD  0.3
V
Operation ambient temperatureTopr40 to 85°CStorage temperatureTstg
40 to 125
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.

 Thermal Resistance Value
Table 5
Item

SymbolCondition

Board A
Board B
Junction-to-ambient thermal
JA
SNT-4A
Board C*1
resistance
Board D
Board E
*1. Test environment: Compliant with JEDEC STANDARD JESD51-2A
Remark

Min.

Typ.

Max.

Unit







300
242










C/W
C/W
C/W
C/W
C/W

Refer to " Power Dissipation" and "Test Board" for details.

5

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series Electrical Characteristics
1.

S-5718Axxxx
Table 6

Item
Power supply voltage
Current consumption
High level input voltage
Medium level input voltage
Low level input voltage
High level output voltage
Low level output voltage
High level input current
Low level input current
Awake mode time
Sleep mode time
Operating cycle
Detection pole switching time2.

Symbol
VDD
IDD
VIH
VIM
VIL
VOH
VOL
IIH
IIL
tAW
tSL
tCYCLEtSWP(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
Average valueIOUT = 0.5 mA
IOUT = 0.5 mA
Peak value
Peak valuetAW  tSL


1.45

VDD  0.85
VDD  0.45
VSS
VDD  0.4

9
36





1.8
1.4





18
18
0.1
102.0
102.1
102.1

3.6
3.0
VDD
VDD  0.55
VDD  0.15

0.4
36
9


200.0
400.0

V
A
V
V
V
V
V
A
A
ms
ms
ms
ms


1
2
2
2
3
4
5
6





S-5718Bxxxx
Table 7

Item
Power supply voltage
Current consumption
High level input voltage
Medium level input voltage
Low level input voltage
High level output voltage
Low level output voltage
High level input current
Low level input current
Awake mode time
Sleep mode time
Operating cycle
Detection pole switching time

6

Symbol
VDD
IDD
VIH
VIM
VIL
VOH
VOL
IIH
IIL
tAW
tSL
tCYCLEtSWP(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
Average valueIOUT = 0.5 mA
IOUT = 0.5 mA
Peak value
Peak valuetAW  tSL


1.45

VDD  0.85
VDD  0.45
VSS
VDD  0.4

9
36





1.8
2.0





18
18
0.1
50.4
50.5
50.5

3.6
4.0
VDD
VDD  0.55
VDD  0.15

0.4
36
9


100.0
200.0

V
A
V
V
V
V
V
A
A
ms
ms
ms
ms


1
2
2
2
3
4
5
6





LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
3.

S-5718Cxxxx
Table 8(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
Item

SymbolPower supply voltage

VDD

Current consumption
High level input voltage
Medium level input voltage
Low level input voltage
High level output voltage
Low level output voltage
High level input current
Low level input current
Awake mode time
Sleep mode time
Operating cycle
Detection pole switching time

IDD
VIH
VIM
VIL
VOH
VOL
IIH
IIL
tAW
tSL
tCYCLEtSWP

Condition

Min.

Typ.

Max.

Unit


S-5718CCSx0
Average valueIOUT = 0.5 mA
IOUT = 0.5 mA
Peak value
Peak valuetAW  tSL


1.45
1.6

VDD  0.85
VDD  0.45
VSS
VDD  0.4

9
36





1.8
1.8
12.0





18
18
0.1
5.6
5.7
5.7

3.6
3.6
22.0
VDD
VDD  0.55
VDD  0.15

0.4
36
9


12.0
24.0

V
V
A
V
V
V
V
V
A
A
ms
ms
ms
ms

Test
Circuit


1
2
2
2
3
4
5
6





7

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series Magnetic Characteristics
1. Product with BOP = 1.8 mT typ. (BHYS = 0.7 mT typ.)Item

SymbolOperation point*1
Release point*2
Hysteresis width*3

S poleN poleS poleN poleS poleN pole

BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Table 9(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
SWP pin = VIM or VIL
SWP pin = VIM or VIH
SWP pin = VIM or VIL
SWP pin = VIM or VIH
BHYSS = BOPSBRPS
BHYSN = BOPNBRPN

0.6
3.0
0.1
2.4



1.8
1.8
1.1
1.1
0.7
0.7

3.0
0.6
2.4
0.1



mT
mT
mT
mT
mT
mT

7
7
7
7
7
7

2. Product with BOP = 3.0 mT typ. (BHYS = 0.8 mT typ.)

Item
Operation point*1
Release point*2
Hysteresis width*3

3.

SymbolS poleN poleS poleN poleS poleN pole

BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Table 10
(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
SWP pin = VIM or VIL
SWP pin = VIM or VIH
SWP pin = VIM or VIL
SWP pin = VIM or VIH
BHYSS = BOPSBRPS
BHYSN = BOPNBRPN

1.6
4.0
1.1
3.7



3.0
3.0
2.2
2.2
0.8
0.8

4.0
1.6
3.7
1.1



mT
mT
mT
mT
mT
mT

7
7
7
7
7
7

Product with BOP = 3.0 mT typ. (BHYS = 1.3 mT typ.)

Item
Operation point*1
Release point*2

Hysteresis width*3

SymbolS poleN poleS poleN poleS poleN pole

BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Table 11
(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
SWP pin = VIM or VIL
SWP pin = VIM or VIH
SWP pin = VIM or VIL
SWP pin = VIM or VIH
BHYSS = BOPSBRPS
BHYSN = BOPNBRPN

1.6
4.0
0.5
2.8



3.0
3.0
1.7
1.7
1.3
1.3

4.0
1.6
2.8
0.5



mT
mT
mT
mT
mT
mT

7
7
7
7
7
7

4. Product with BOP = 4.5 mT typ. (BHYS = 1.0 mT typ.)

Item
Operation point*1
Release point*2
Hysteresis width*3

8SymbolS poleN poleS poleN poleS poleN pole

BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Table 12
(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
SWP pin = VIM or VIL
2.5
4.5
6.0
mT
7
SWP pin = VIM or VIH
6.0
4.5
2.5
mT
7
SWP pin = VIM or VIL
2.0
3.5
5.5
mT
7
SWP pin = VIM or VIH
5.5
3.5
2.0
mT
7
BHYSS = BOPSBRPS

1.0

mT
7
BHYSN = BOPNBRPN

1.0

mT
7

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
5. Product with BOP = 4.5 mT typ. (BHYS = 2.5 mT typ.)

Item
Operation point*1
Release point*2

Hysteresis width*3

SymbolS poleN poleS poleN poleS poleN pole

BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Table 13
(Ta = 25°C, VDD = 1.8 V, VSS = 0 V unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
Circuit
SWP pin = VIM or VIL
2.5
4.5
6.0
mT
7
SWP pin = VIM or VIH
6.0
4.5
2.5
mT
7
SWP pin = VIM or VIL
0.8
2.0
3.5
mT
7
SWP pin = VIM or VIH
3.5
2.0
0.8
mT
7
BHYSS = BOPSBRPS

2.5

mT
7
BHYSN = BOPNBRPN

2.5

mT
7

*1. BOPN, BOPS: Operation points
BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic
flux density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer).
Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status.
*2. BRPN, BRPS: Release points
BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic
flux density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away).
Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status.
*3. BHYSN, BHYSS: Hysteresis widths
BHYSN and BHYSS are the difference of magnetic flux density between BOPN and BRPN, and BOPS and BRPS,
respectively.
Remark The unit of magnetic flux density mT can be converted by using the formula 1 mT = 10 Gauss.

9LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Test Circuits
A

Open

Figure 3

Open

A

Figure 7

Figure 4

A
V

Test Circuit 3

VDD
OUT
SWP
S-5718
SeriesVSS

Test Circuit 5

VDD
OUT
SWP
S-5718
SeriesVSS

V

Test Circuit 1

VDD
SWP
OUT
S-5718
SeriesVSS

Figure 5

10

VDD
OUT
SWP
S-5718
SeriesVSS

Open

Test Circuit 2

VDD
SWP
OUT
S-5718
SeriesVSS

Figure 6

A

Figure 8V

AV

Test Circuit 4

VDD
SWP
OUT
S-5718
SeriesVSS

Test Circuit 6

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series

VDD
OUT
SWP
S-5718
SeriesVSS

Figure 9

V

Test Circuit 7

 Standard Circuits
1. Omnipolar detection operation(SWP pin = Open)

Open
CIN
0.1 F

VDD
OUT
SWP
S-5718
SeriesVSS

2. S pole detection operation(SWP pin = VSS)CIN
0.1 F

Figure 10

Figure 11

3. N pole detection operation(SWP pin = VDD)

4. Detection pole switching operation(SWP pin = Open / VSS / VDD)

VDD
OUT
SWP
S-5718
SeriesVSS

CIN
0.1 F

Figure 12
Caution

VDD
SWP
OUT
S-5718
SeriesVSS

Microcontroller
CIN
0.1 F

VDD
OUT
SWP
S-5718
SeriesVSS

Figure 13

The above connection diagrams and constants will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.

11

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Operation
1. Direction of applied magnetic flux
This IC detects the magnetic flux density which is vertical to the marking surface.
Figure 14 shows the direction in which magnetic flux is being applied.

N
S
Marking surface

Figure 14

2. Position of Hall sensor
Figure 15 shows the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.

Top view

1

The center of Hall sensor;
in this  0.3 mm
42

3

0.16 mm (typ.)Figure 15

12LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
3. Basic operation
This IC changes the output voltage (VOUT) according to the level of the magnetic flux density (N pole or S pole) applied
by a magnet.
This IC can also switch the detection pole according to the SWP pin input voltage (VIN) status.
The following explains the operation for active "L" products.
3. 1 When VIN is medium level input voltage (VIM)
This IC performs omnipolar detection operation. Set the SWP pin to an open status or input VIM to the SWP pin.
If a capacitor with large capacitance is connected to the SWP pin when using the pin in the open status, steep
changes in power supply voltage at power-on and during power supply fluctuations may cause erroneous N poleor S pole detection operation. For this reason, it is recommended that the SWP pin capacity be set to 100 pF or
lower including parasitic capacitance.

VOUT

BHYSN

BHYSS
"H"

N pole

BOPN

BRPN

BRPS

0

BOPS

"L"
S poleMagnetic flux density (B)Figure 16
3. 2 When VIN is low level input voltage (VIL)This IC performs S pole detection operation. Connect the SWP pin to VSS pin with a resistor having 10 k orlower, or input VIL to the SWP pin.
VOUT

BHYSS
"H"

N pole

0

BRPS

BOPS

"L"
S poleMagnetic flux density (B)Figure 17
3. 3 When VIN is high level input voltage (VIH)

This IC performs N pole detection operation. Connect the SWP pin to VDD pin with a resistor having 10 k orlower, or input VIH to the SWP pin.
BHYSN

VOUT
"H"

N pole

BOPN

BRPN

0

"L"
S poleMagnetic flux density (B)Figure 18

13

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
4. Time dependency in the current consumption
This IC performs the intermittent operation, and operates at a low current consumption by repeating sleep mode andawake mode.
Figure 19 shows the time dependency in the current consumption.

Operating cycle (tCYCLE)
Current consumption (IDD)

Sleep modetime (tSL)

Awake modetime (tAW)

At awake mode
640 A typ.

At sleep mode
0.78 A typ.
Time
Figure 19

14

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
5. Timing chart for magnetic flux density response
Figure 20 shows the operation timing chart for active "L" products.

BOPS
BRPS
Magnetic flux density
applied to this IC

BRPN
BOPN

tCYCLE
Current consumption (IDD)"H"

Output voltage (VOUT)(Omnipolar detection operation,
SWP pin = VIM)

"L"

"H"

Output voltage (VOUT)(S pole detection operation,
SWP pin = VIL)

"L"

"H"

Output voltage (VOUT)(N pole detection operation,
SWP pin = VIH)

"L"

Figure 20

15

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
6. Timing chart for detection pole switching
During awake mode time (tAW), this IC detects the SWP pin input voltage (VIN), and the detection pole switches whentAW ends. Figure 21 and Figure 22 show the timing chart for switching from N pole detection to S pole detection
when magnetic flux density (B)  BOPS in active "L" products.
When VIN changes during sleep mode time (tSL) between tAW<1> and tAW<2> and does not change during tAW<2>, thisIC outputs the output voltage (VOUT) according to the detection pole when tAW<2> ends.

Current consumption (IDD)tCYCLE
tAW
<1>

tAW

tSL
tSWP

<2>

SWP pin input voltage (VIN)

Time

VDD

VIH

VDD  0.85

VDD  0.15

VIL

VSS

Time

Input current (IIN)
IIH
Time

IIL
Output voltage (VOUT)
VOH

"H"

VOL

"L"
Time

Figure 21 When VIN does not Change during tAW<2>

16

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series

When VIN changes during tAW<2>, this IC may output VOUT according to the detection pole when tAW<1> ends. Refer toFigure 21 for the operation of tAW<3>.

Current consumption (IDD)tCYCLEtCYCLE
tAW
<1>

tSL

tAW
<2>

tSL

tAW
<3>

tSWP

SWP pin input voltage (VIN)

Time

VDD

VIH

VDD  0.85

VDD  0.15

VIL

VSS

Time
Input current (IIN)
IIH
Time

IIL
Output voltage (VOUT)
VOH

"H"

VOL

"L"
Time

Figure 22 When VIN Changes during tAW<2>

17

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Precautions
 If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by
feed-through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
 Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under theenvironment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of
the IC by reading it multiple times.
 Note that the IC may malfunction in the following situations.
When the OUT pin is shorted to VSS pin or VDD pin.
When the OUT pin is affected by noise.
When the intermediate potential is applied to the OUT pin.
 Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
 Large stress on this IC may affect the magnetic characteristics. Avoid large stress which is caused by the handlingduring or after mounting the IC on a board.
 Note that the output voltage may change if the intermediate value of magnetic flux density between the operation
point and release point is applied to this IC over a long time.
 ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement byproducts including this IC of patents owned by a third party.

18

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
 Characteristics (Typical Data)
Output voltage
1. 1High level output voltage (VOH)vs. Temperature (Ta)

1. 2

VDD = 3.6 V

2.0
1.0
0.0

1. 3

VOH [V]VDD = 1.8 V

VDD = 1.6 V

025Ta [°C]

50

1. 4

1.5

2.0

VDD = 1.6 V
VDD = 1.45 V

25
Ta [°C]

50

4.0

0.4

Ta = 25°C

0.2

Ta = 85°C

0.0

0

3.5

Low level output voltage (VOL)vs. Power supply voltage (VDD)

0.1

40 25

2.5
3.0
VDD [V]

0.3

0.1
0.0

1.0

VDD = 1.8 V

0.2

Ta = 40°C

0.0

VDD = 3.6 V

0.3

Ta = 85°C

2.0

75 85

Low level output voltage (VOL)vs. Temperature (Ta)

0.4

3.0

1.0

VDD = 1.45 V40 25

Ta = 25°C

4.0

VOL [V]VOH [V]

4.0
3.0

High level output voltage (VOH)vs. Power supply voltage (VDD)

5.0

5.0

VOL [V]1.

75 85

1.0

1.5

2.0

Ta = 40°C

2.5
3.0
VDD [V]

3.5

4.0

19

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
2.

Current consumption, operating cycle

2. 1

S-5718Cxxxx

2. 1. 1

Current consumption (IDD)vs. Temperature (Ta)2. 1. 230

30
20

VDD = 1.8 V

15
10

VDD = 1.6 V

5

2. 1. 325

VDD = 3.6 V
IDD [A]

IDD [A]

25

040 25025Ta [°C]50

Ta = 40°C

01.0

2. 1. 4

1.5

2.0

2.5
3.0
VDD [V]

3.5

4.0

Operating cycle (tCYCLE)
vs. Power supply voltage (VDD)

12

VDD = 1.8 V

6
VDD = 1.6 V
40 250

VDD = 1.45 V
25
Ta [°C]

50

75 85

Ta = 40°C

10

VDD = 3.6 V
tCYCLE [ms]tCYCLE [ms]2010

75 8580Ta = 25°C

15
5Operating cycle (tCYCLE)
vs. Temperature (Ta)102Ta = 85°C

20

VDD = 1.45 V

124

Current consumption (IDD)vs. Power supply voltage (VDD)

Ta = 25°C

8
6
4
2

Ta = 85°C

0
1.0

1.5

2.0

2.5
3.0
VDD [V]

3.5

4.0

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series
Magnetic sensitivity
S-5718xxSx0

3. 1. 1

Operation point, release point (BOP, BRP)
vs. Temperature (Ta)VDD = 1.8 V

BOP, BRP [mT]

6.0

3. 2

BRPS

4.0
0.0
2.0

BRPN

4.0
40 25

0

BOPN
25
Ta [C]50

Operation point, release point (BOP, BRP)
vs. Power supply voltage (VDD)

Ta = +25°C

6.0

BRPS

4.0

BOPS

2.0
0.0
2.0
4.0

BRPN

BOPN

2.0

2.5
3.0
VDD [V]

6.0

75 85

1.0

1.5

3.5

4.0

S-5718xxWx1

3. 2. 1

Operation point, release point (BOP, BRP)
vs. Temperature (Ta)

4.0

BRPS

BOPS

BRPN

BOPN

2.0
0.0
2.0
4.0
6.0

3. 2. 2

VDD = 1.8 V

6.0

BOP, BRP [mT]

BOPS

2.0

6.0

3. 1. 2

BOP, BRP [mT]3. 1

40 25025Ta [C]

50

75 85

Operation point, release point (BOP, BRP)
vs. Power supply voltage (VDD)
Ta = +25°C

6.0

BOP, BRP [mT]

3.

BRPS

4.0

BOPS

2.0
BRPN

0.0

BOPN

2.0
4.0
6.0
1.0

1.5

2.0

2.5
3.0
VDD [V]

3.5

4.0

21

LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC WITH SWITCHABLE DETECTION POLE FUNCTION
Rev.1.1_01
S-5718 Series Power Dissipation
SNT-4A
Tj = 125C max.

Power dissipation (PD) [W]

1.0
0.8
0.6
B

0.4

A
0.2
0.0

0

25

50

75

100

125

150

Ambient temperature (Ta) [C]

Board
A
B
C
D
E

22

Power Dissipation (PD)0.33 W
0.41 W


175

SNT-4A Test Board
IC Mount Area

(1) Board A
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

No. SNT4A-A-Board-SD-1.0

ABLIC Inc.

1.2±0.04
3

4

+0.05
0.08 -0.02

2

1

0.65
0.48±0.02

0.2±0.05

No. PF004-A-P-SD-6.0

TITLE

SNT-4A-A-PKG Dimensions

No.

PF004-A-P-SD-6.0

ANGLE
UNIT

mm

ABLIC Inc.

+0.1

ø1.5 -0

4.0±0.1

2.0±0.05

0.25±0.05+0.1

1.45±0.1

2

1

3

4

ø0.5 -0

4.0±0.1

0.65±0.05

Feed direction

No. PF004-A-C-SD-2.0

TITLE

SNT-4A-A-Carrier TapeNo.

PF004-A-C-SD-2.0

ANGLE
UNIT

mm

ABLIC Inc.

12.5max.

9.0±0.3

Enlarged drawing in the central part
ø13±0.2

(60°)

(60°)

No. PF004-A-R-SD-1.0

TITLE

SNT-4A-A-Reel

No.

PF004-A-R-SD-1.0
QTY.

ANGLE
UNIT

mm

ABLIC Inc.

5,000

0.52

1.16

2

0.52

0.35

1.
2.

0.3

1

(0.25 mm min. / 0.30 mm typ.)(1.10 mm ~ 1.20 mm)
0.03 mm

1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.

(0.25 mm min. / 0.30 mm typ.)(1.10 mm ~ 1.20 mm)

No. PF004-A-L-SD-4.1

TITLE

SNT-4A-A-Land Recommendation

No.

PF004-A-L-SD-4.1

ANGLE
UNIT

mm

ABLIC Inc.

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information describedherein.

4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due tothe use of the products outside their specified ranges.

5.

Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.

6.

When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-relatedlaws, and follow the required procedures.

7.

The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,biological or chemical weapons or missiles, or use any other military purposes.

8.

The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.

9.

In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products areallowed to apply for the system on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of thisdocument described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07

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