★★★

＜知的財産翻訳検定【第 6 回<和文英訳>試験】＞答案用紙★★★

==================================================================
受験番号：06IPE001
科

目：：「電気・電子工学」==================================================================＜選択問題解答＞[課題 1]
WHAT IS CLAIMED IS:
1. A method for correcting realtime data in a Bluetooth module configured toinclude a SCO link and a memory, comprising the steps of:recording realtime data of a packet, received from outside via said SCO link,
onto said memory while detecting a loss in the received packet;
if there is a loss in data of said packet, checking a correlation between (i)respective data of packets coming just before and after the lost packet and (ii) respective
data of two packets having been sent previously and disposed with one packet
therebetween, so as to find data of similar packets to the packets coming just before andafter said lost packet; andcomplementing the data of said lost packet by data of a packet interposed
between the two packets thus found.
2. The method for correcting realtime data as set forth in claim 1 or 2, wherein:
the data of said similar packets are found by comparison using summation ofsquare values of differences.
[課題 2]【0001】In recent years, an RF-MEMS device, a high-frequency device utilizing a micro
machining technology, has been drawing attention. The subject technology allows
manufacture of a high-aspect structure and a membrane structure, so that even ahigh-frequency circuit manufactured on an inexpensive silicon substrate is less likely tobe affected by the substrate. Accordingly, a low cost high-frequency device with highperformance is expected to be obtained. Meanwhile, in recent years, the upper limit offrequencies usable in a high-frequency silicon CMOS circuit is extended to a GHz band.
Hence, it is expected that integration of a silicon CMOS active circuit and an RF-MEMS
passive circuit achieves high performance and downsizing of a high-frequency module.

【0002】For integrating a high-frequency passive circuit element and a semiconductor
element serving as an active circuit, there are the monolithic method and the hybrid
method. In the monolithic method, both the elements are formed on the same substrate
whereas in the hybrid method, either one of the elements is mounted on the other. Eachof the methods has advantages and disadvantages. In a high frequency device, a passive
circuit element occupies a significant area. Accordingly, utilization of the monolithic
method will result in increase in the overall size. Further, in a high frequency band of
10 GHz or higher, a low-resistance silicon substrate used in the active circuit causes lossin the passive circuit side. Thus, there is a problem in the monolithic method.
[課題 3]【0001】
The following explains an embodiment of the present invention with reference
to a block diagram of Fig. 1. Now, an action pulse determining section 6 is added to theconventional control device. Further, a storage section 1 and an interpolation operation
section 3 have slightly different functions from the conventional ones respectively, asdescribed below. In response to an instruction described to bring into a high locus mode
upon an action teach, the interpolation operation section 3 feeds the action pulse
determining section 6 an action instruction pulse value for each axis. The action pulse
determining section 6 compares the fed instruction pulse for each axis with apredetermined pulse determination value Pc. If the instruction pulse is larger than thePc, a normal action is performed. If the instruction pulse is smaller than the Pc, theaction pulse determining section 6 send the interpolation operation section 3 the nameof the axis whose instruction value is smaller than the Pc and a re-interpolation
operation request.

