★★★ ＜第19回知的財産翻訳検定試験【第9回英文和訳】＞ ★★★

≪１級課題 -電気・電子工学-≫【解答にあたっての注意】
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４．課題は３題あります。それぞれの課題の指示に従い、３題すべて解答してください。

問１． 次の英文クレームを日本語に訳しなさい。

1.

A robot cleaner comprising:a cleaner body which automatically travels in an area to be cleaned;a suction unit which suctions dust in the area to becleaned into a specific space included in the cleaner body;a microbe contamination sensor which detects a microbe
contamination in the area to be cleaned to generate a microbe
contamination measuring signal; anda sterilizing unit which sterilizes a corresponding
portion according to the microbe contamination measuring signal.

2.

The robot cleaner of claim 1, wherein the microbe

contamination sensor comprises a gas sensor which senses aparticular smell component produced by a microbe to be detected.

3.

The robot cleaner of claim 2, wherein the gas sensor comprises:a substrate;
a sensing layer which is laminated on the substrate and reacts with theparticular smell component, thereby causing a resistance variation;
an electrode which is buried on the sensing layer to measure theresistance variation;a heater which heats the sensing layer to a temperature suitable formeasuring the resistance variation;a filter layer which filters a gas excluding the particular smell
component so as not to be mixed into the sensing layer; anda mesh cap which prevents dust from mixing into the sensing layer.

問２. 次の英文を日本語に訳しなさい。
Advances in electrical energy technology are frequently
impeded by a lack of appropriate means for electrical energy
storage (EES). For example, renewable energy sources such as
wind and solar energy could meet a significant proportion of
the world's electricity needs, but remain largely untapped forwant of viable EES capacity. In addition, large-scale EES willbe critical to the success of innovation of the electric power grid.
Although rechargeable batteries are necessary for EES,
established battery chemistries are poorly suited for large-scale applications.
They store energy in the form of solid reactants as a part of the battery
electrodes. Furthermore, the electrodes must undergo physical and chemicalchanges each time the battery is charged and discharged. These changes impose
limits not only on the cycle life but also on the maximum power to be delivered.
Redox-Flow Batteries are rechargeable systems in which theelectrochemical reactants are dissolved in liquid electrolytes. The electrolytes
stored in external tanks are pumped through a stack of reaction cells whereelectrical energy is alternately converted to and extracted from chemical energy

in the reactants by way of reduction and oxidation.
The reaction stoichiometry of the two reactants may deviate from adesired relationship. When such a deviation occurs, the RFB electrolytes aresaid to be "imbalanced", which leads to system inefficiency, either by consuming
too much energy or by releasing contaminants into the RFB electrolytes.

問３． 次の英文の段落０００１，０００４、及び０００５を、添付のＦＩＧ．２Ｂを参照しつつ、日本語に訳しなさい。
[0001]
So-called trench capacitors have been developed to increase thecapacitance of the storage capacitor while increasing the integration density ofthe memory cells. Various techniques have been employed to connect trenchcapacitors to surface-located transfer gates. For example, a self-aligned
buried strap may be used.
[0002]As shown in FIGS. 2B, a DRAM cell 50 includes a trenchcapacitor 55 and a transfer gate 60. The trench capacitor 55
includes a first N+ polysilicon fill 65, a second N+ polysilicon fill 67,
and a collar oxide 71.
[0003]The transfer gate 60 includes N-type source/drain regions 73 and 74
formed in a P-well 75 and a polysilicon gate 77 insulatively spaced from thechannel between source/drain regions 73 and 74. A bit line contact 79
electrically connects a source/drain region 73 to a bit line 81. A shallow
trench isolation (STI) arrangement 80 electrically isolates DRAM cell 50 froman adjacent memory cell and a passing word line 92.
[0004]
A diffusion region 83 is formed to electrically connecta third polysilicon fill 69 and the source/drain region 74 of

MOS transfer gate 60 by outdiffusing dopants from the highly
doped polysilicon fill in the storage trench into the P-well 75.
The diffusion region 83 and the third polysilicon fill 69 constitutea buried strap 98 for connecting the trench capacitor 55 to the transfer gate60. The strap 98 may protrude less than 0.1 micrometer laterally into theP-doped well 75 and vertically no more than the thickness of the STI 80 whichisolates this cell from adjacent cells.
[0005]
Typically, the strap 98 that connects the storage plateto the pass gate 77 in a DRAM cell is formed in a conventional
thermal process which allows the N(or P)-type dopants present
in the trench to diffuse upwards through the storage plate andinto the P-doped well 75 through a narrow opening. The dopantscannot diffuse through the oxide collar 71. The object of the process
is to limit the size of this outdiffused buried strap region by impeding
the flow of N-type dopants into the P-type well region.