CMOS IC Application Note

S-8209A Series

Usage Guidelines

Rev.2.1_00© ABLIC Inc., 2008-2020
The S-8209A Series is a battery protection IC with the cell-balance function.
This application note is a guideline on the typical connection examples when using the S-8209A Series for applications.
Refer to the datasheet for details and spec of this IC.
It is possible to configure the following applications with the S-8209A Series.
• A protection circuit with multi-serial cell; 2 cells or more
• A battery protection circuit with cell-balance function• Protection circuit with S-8209A Series for multi-serial cell

S-8209A

S-8209A

S-8209A

1

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

Contents
1. Protection circuit with S-8209A Series (without discharge cell-balance function)
for multi-serial cell ...................................................................................................................................... 3
1. 1 Connection example of battery protection IC ........................................................................................................ 3
1. 2 Operation.............................................................................................................................................................. 4
1. 2. 1 Normal status ............................................................................................................................................... 4
1. 2. 2 Status to inhibit charge ................................................................................................................................. 5
1. 2. 3 Status to inhibit discharge............................................................................................................................. 6
1. 2. 4 Charge cell-balance function ........................................................................................................................ 7
1. 2. 5 Delay circuit .................................................................................................................................................. 7
1. 3 Timing chart .......................................................................................................................................................... 8
1. 3. 1 Overcharge detection ................................................................................................................................... 8
1. 3. 2 Overdischarge detection ............................................................................................................................... 9
1. 4 Demonstration data of charge cell-balance detection ......................................................................................... 10
1. 4. 1 High ratio of bypass current to charge current ............................................................................................ 10
1. 4. 2 Low ratio of bypass current to charge current ............................................................................................. 11

2. Protection circuit with S-8209A Series (with discharge cell-balance function)
for multi-serial cell ................................................................................................................................................. 12
2. 1 Connection example of battery protection IC ...................................................................................................... 12
2. 2 Operation ............................................................................................................................................................ 13
2. 3 Timing chart of overdischarge detection ............................................................................................................. 14
2. 4 Demonstration data of discharge cell-balance detection .................................................................................... 15

3. Examples of application circuit ............................................................................................................... 16
3. 1 10-serial cell protection circuit added the discharge overcurrent protection function(Charge pin and discharge pin are integrated, S-8269B Series)......................................................................... 16
3. 2 10-serial cell protection circuit added the charge and discharge overcurrent protection functions(Charge pin and discharge pin are integrated, S-8269B Series)......................................................................... 17
3. 3 10-serial cell protection circuit added the charge and discharge overcurrent protection functions(Charge pin and discharge pin are separated, S-8269B Series) ....................................................................... 18
3. 4 10-serial cell protection circuit added the discharge overcurrent protection function(Charge pin and discharge pin are separated, S-8239A Series active "L" product) ............................................ 19
3. 5 10-serial cell protection circuit added the discharge overcurrent protection function(Charge pin and discharge pin are separated, S-8239A Series active "H" product) ........................................... 20
3. 6 5-serial cell protection circuit connected by connectors ...................................................................................... 21

4. External components list ......................................................................................................................... 22
5. Precaution.................................................................................................................................................. 24
6. Related source .......................................................................................................................................... 24

2

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

1. Protection circuit with S-8209A Series (without discharge cell-balance function) for
multi-serial cellIn the connection of the S-8209A Series, connecting the CTLC, CTLD pins to the CO, DO pins allows to configure a
protection circuit for serially connected batteries.

1. 1 Connection example of battery protection IC
Figure 1 shows the example of protection circuit with S-8209A Series for multi-serial cell.

P+

RDO3

RCO3

QDO

QCO

RDO2

RCO2

RVDD

CO1

VDD1

DO1

CDT1

CCDT

CVDD

S-8209A
(1)
CB1
RCTLC

RPASS
BAT1

CTLC1
CTLD1

VSS1

RCB

CBFET1

RCTLD

RVDD
CO2

VDD2

DO2

CDT2

CVDD

S-8209A
(2)
CB2

RPASS
BAT2

CTLC2
RCTLC

CTLD2

VSS2

RCB

CBFET2

RCTLD

RVDD

CO3

VDD3

DO3

CDT3

CVDD

S-8209A
(3)
CB3

CTLD3
RCTLD0P−

CFET

Remark Refer to "4.

BAT3

CTLC3

RDO4

RCO4

RPASS

VSS3

RCB

CBFET3

RCTLC0DFET

External components list" for constants of external components.
Figure 1

Caution 1.
2.

The connection example may be changed without notice.
It has not been confirmed whether the operation is normal or not in circuits other than the connection
example. In addition, the connection example and the constants do not guarantee proper operation.
Perform thorough evaluation using the actual application to set the constants.

3

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

1. 2 Operation
Following is about the operation of protection circuit with S-8209A Series for multi-serial cell shown in Figure 1.
1. 2. 1 Normal status
Following is about the operation of S-8209A Series in the normal status.
The S-8209A goes in the normal status;
In the S-8209A (3), The CTLC3, CTLD3 pins are pulled down to the level of VSS3 pin, BAT3 is more than theoverdischarge detection voltage (VDL) and less than the overdischarge detection voltage (VCU). The CO3, DO3
pins get the level of VSS3 pin.
In the S-8209A (2), The CTLC2, CTLD2 pins are pulled down to the level of VSS3 pin by the CO3, DO3 pins,
BAT2 is more than VDL and less than VCU. The CO2, DO2 pins get the level of VSS2 pin.
In the S-8209A (1), The CTLC1, CTLD1 pins are pulled down to the level of VSS2 pin by the CO2, DO2 pins,
BAT1 is more than VDL and less than VCU. The CO1, DO1 pins get the level of VSS1 pin.
The status of each pin in the normal status is shown in Table 1.
Table 1
CTLC pin

CTLD pin

CTLC3 = VSS3
CTLC2 = VSS3
CTLC1 = VSS2

CTLD3 = VSS3
CTLD2 = VSS3
CTLD1 = VSS2

Status of battery
VDL < BAT3 < VCU
VDL < BAT2 < VCU
VDL < BAT1 < VCU

CO pinDO pinCO3 = VSS3
CO2 = VSS2
CO1 = VSS1

DO3 = VSS3
DO2 = VSS2
DO1 = VSS1The S-8209A (1) in the normal status turns on the charge control FET (CFET) and the discharge control FET(DFET) via bipolar transistors (QCO, QDO) externally set to each CO1 and DO1 pin. Therefore it is possible tocharge/discharge by a charger or a load connected between P+ and P−.

4

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

1. 2. 2 Status to inhibit charge
Following is about the status to inhibit charge, for example, the S-8209A (3) detects overcharge, the S-8209A (2)and (1) are in the normal status.
The S-8209A (3) goes in the overcharge status when BAT3 gets VCU or more by charging. The CO3 pin is set inhigh impedance.
The CTLC2 pin of the S-8209A (2) is pulled up to the level of VDD2 pin by the CTLC pin source current (ICTLCH).
The CTLC2 pin gets the level of VDD2 pin by the high impedance CO3 pin. Thus the S-8209A (2) goes in theovercharge status after the level of CTLC2 pin gets the CTLC pin H voltage (VCTLCH) or more. The CO2 pin is set
in high impedance.
The CTLC1 pin of the S-8209A (1) is pulled up to the level of VDD1 pin by ICTLCH as well. The CTLC1 pin gets thelevel of VDD1 pin by the high impedance CO2 pin. The S-8209A (1) also goes in the overcharge status after thelevel of CTLC1 pin gets VCTLCH or more.
The status of each pin in this case is shown in Table 2.
Table 2
CTLC pin

CTLD pin

CTLC3 = VSS3
CTLC2 = VDD2
CTLC1 = VDD1

CTLD3 = VSS3
CTLD2 = VSS3
CTLD1 = VSS2

Status of battery
VCU ≤ BAT3
VDL < BAT2 < VCU
VDL < BAT1 < VCU

CO pinDO pinCO3 = High-Z
CO2 = High-Z
CO1 = High-Z

DO3 = VSS3
DO2 = VSS2
DO1 = VSS1The S-8209A (1) in the overcharge status turns off the CFET via a bipolar transistor (QCO) set externally to theCO1 pin. In this case, charging via a charger connected between P+ and P− is inhibited.
By this operation the overcharge status is transmitted from the bottom (S-8209A (3)) to the top (S-8209A (1)), fromthe CO pin to the CTLC pin.
Charging is also inhibited; BAT1 or BAT2 gets VCU or more.

5

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

1. 2. 3 Status to inhibit discharge
Following is the status to inhibit discharge, for example, the S-8209A (3) detects overdischarge, the S-8209A (2)and (1) are in the normal status.
The S-8209A (3) goes in the overdischarge status when BAT3 gets VDL or less by discharging. The DO3 pin is set
in high impedance.
The CTLD2 pin of the S-8209A (2) is pulled up to the level of VDD2 pin by the CTLD pin source current (ICTLDH).
The CTLD2 pin gets the level of VDD2 pin by the high impedance DO3 pin. Thus the S-8209A (2) goes in theoverdischarge status after the level of CTLD2 pin gets the CTLD pin H voltage (VCTLDH) or more. The DO2 pin is
set in high impedance.
The CTLD1 pin of the S-8209A (1) is pulled up to the level of VDD1 pin by ICTLDH as well. The CTLD1 pin gets thelevel of VDD1 pin by the high impedance DO2 pin. The S-8209A (1) also goes in the overdischarge status after
the level of CTLD1 pin gets VCTLDH or more.
The status of each pin in this case is shown in Table 3.
Table 3
CTLC pin

CTLD pin

CTLC3 = VSS3
CTLC2 = VSS3
CTLC1 = VSS2

CTLD3 = VSS3
CTLD2 = VDD2
CTLD1 = VDD1

Status of battery
BAT3 ≤ VDL
VDL < BAT2 < VCU
VDL < BAT1 < VCU

CO pinDO pinCO3 = VSS3
CO2 = VSS2
CO1 = VSS1

DO3 = High-Z
DO2 = High-Z
DO1 = High-Z

The S-8209A (1) in the overdischarge status turns off the DFET via a bipolar transistor (QDO) externally set to theDO1 pin. In this case, discharging to a load connected between P+ and P− is inhibited.
By this operation the overdischarge status is transmitted from the bottom (S-8209A (3)) to the top (S-8209A (1)),
from the DO pin to the CTLD pin.
Discharging is also inhibited; BAT1 or BAT2 gets VDL or less.

6

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

1. 2. 4 Charge cell-balance function
In Figure 1, The S-8209A (3) sets the CB3 pin at the level of VDD3 pin when BAT3 gets the cell-balance detection
voltage (VBU) or more by charging. By this operation, the cell-balance control FET (CBFET3) is turned on so thatthe cell-balance control FET bypasses the charge current which flows into BAT3.
At this point, if BAT1, BAT2 are less than VBU, the speed to charge BAT3 gets slower than to charge BAT1, BAT2.
This is the charge cell-balance function. Even if any of battery voltages reaches VBU, the cell-balance control FET
which corresponds to each battery turns on and the cell-balance is adjusted.
The S-8209A Series turns off the cell-balance control FET when the battery voltage decreases to the cell-balance
release voltage (VBL) or less by discharging again.
Caution If a battery having the voltage VBL or more is included among batteries when composing aprotection circuit shown in Figure 1, the cell-balance control FET may turn on immediately afterconnecting the batteries.
1. 2. 5 Delay circuit
Connecting a delay capacitor only to the CDT1 pin of the S-8209A (1), as seen in Figure 1, allows to gain thedetection delay time (tDET) and the release delay time (tREL). In detecting by any of batteries, each delay time is thesame length.
(1)

Detection delay time (tDET)

BAT3 gets VCU or more by charging, the CTLC2 pin gets the level of VDD2 pin because a capacitor is notconnected to the CDT3 pin so that the CO3 pin is set in high impedance after delay of several hundred μs.
After that in the S-8209A (2), the level of CTLC2 pin gets VCTLCH or more, after delay of several hundred μs theCO2 pin is set in high impedance.
In the S-8209A (1), after delay of 10.0 [MΩ] (typ.) × 0.01 [μF] = 0.1 [s] (typ.), the CO1 pin is set in highimpedance because connected CCDT to the CDT1 pin.
Even if any of batteries detects, by this operation, users are able to gain the detection delay time almost thesame to delay time of the S-8209A (1), because it defines the whole delay time in the S-8209A Series.
(2)

Release delay time (tREL)The S-8209A Series also has the release delay time (tREL), and this delay time is set its length as approx. 1/10of the detection delay time. Connecting a delay capacitor only to the CDT1 pin of the S-8209A (1) allows having
the same release delay time, as well as in the detection delay time.

7S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

1. 3 Timing chart
1. 3. 1 Overcharge detection

tDET

tDET

tREL

tREL

VCU (1)VBU (1)
VBL (1)
VCL (1)
CB1

VDD1

VDD1

CB1

VSS (1)VCU (2)
VBU (2)
VBL (2)
VCL (2)
VDD2

VDD2

CB2

CB2

VSS (2)

VCU (3)
VBU (3)
VBL (3)
VCL (3)

VDD3

VDD3
CB3

CB3
VSS (3)

VDD1
VDD2
VDD3
VSS3

CO1
CO2
CO3
CFET gate voltage

P−
Charger connection
Load connection

*1.

*1

Normal status

Status to inhibit charge

In this period, the discharge current flows via a parasitic diode in the CFET.
Figure 28Normal status

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

1. 3. 2 Overdischarge detection
tREL

tDET
VDD1
VDU (1)
VDL (1)

VSS (1)VDD2
VDU (2)
VDL (2)

VSS (2)

VDU (3)
VDL (3)VDD3VSS (3)

VDD1
VDD2
VDD3
VSS3

DO1
DO2
DFET gate voltage

DO3

Charger connection
Load connection
Normal status*1.

Status to inhibit discharge*1Normal status

In this period, the charge current flows via a parasitic diode in the DFET.
Figure 39S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

1. 4 Demonstration data of charge cell-balance detection
The demonstration data shows cell-balance for 3-serial lithium ion rechargeable battery using the S-8209AAA.
1. 4. 1 High ratio of bypass current to charge current
Charger: a constant current charger (0.05 C = 145 mA)
S-8209AAA charge cell-balance, 0.05 C constant current charger
Absolute value of battery voltage [V]4.2
Overcharge detection

Cell-balance detection

VCU

4.1

VBU
BAT3

4.0

VBL = VCL

BAT2
BAT1
3.9

3.8
0

60

120

180

240

300

360

420

480

Time [min.]Charger connection
CB1
CBFET1 on
CB2
CBFET2 on
CB3CBFET3 on
CFET Gate

Figure 4
Test conditions
Test circuit: Figure 1
IC: S-8209AAA (VCU = 4.100 V, VCL = 4.000 V, VBU = 4.050 V, VBL = 4.000 V, VDL = 2.500 V, VDU = 2.700 V)
Battery: 3-serial cell Lithium ion rechargeable battery, Nominal capacitance: 2.9 Ah, Size: 18650
RPASS: 51 Ω (1 W) → Bypass current = 4.1 V / 51 Ω = 80 mA

10

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

1. 4. 2 Low ratio of bypass current to charge current
When the ratio of bypass current to charge current is low, repeating cell-balance cycle enables to adjustcell-balance.
Charger: a constant current charger (0.1 C = 290 mA)
S-8209AAA charge cell-balance, 0.1 C constant current charger
Absolute value of battery voltage [V]

4.2
VCU

4.1
BAT3

VBU
VBL = VCL

4.0
BAT2
BAT1

3.9

3.8
0

60

120

180

240

300

360

420

480

Time [min.]Charger connection

Figure 5
Test conditions
Test circuit: Figure 1
IC: S-8209AAA (VCU = 4.100 V, VCL = 4.000 V, VBU = 4.050 V, VBL = 4.000 V, VDL = 2.500 V, VDU = 2.700 V)
Battery: 3-serial cell lithium ion rechargeable battery, Nominal capacitance: 2.9 Ah, Size: 18650
RPASS: 51 Ω (1 W) → bypass current = 4.1 V / 51 Ω = 80 mA

11

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

2. Protection circuit with S-8209A Series (with discharge cell-balance function) for
multi-serial cell
2. 1 Connection example of battery protection IC
Setting bipolar transistors (QCTLD1, QCTLD2) allows adding the function to transmit the overdischarge status from thetop (S-8209A (1)) to the bottom (S-8209A (3)).

P+

RDO3

RCO3

QDO

QCO

RDO2

RCO2

RVDD

CO1

VDD1

DO1

CDT1

CCDT

CVDD

S-8209A
(1)
CB1

RPASS
BAT1

CTLC1
RCTLC

CTLD1

VSS1

RCB

CBFET1

RCTLD

RVDD
CO2

VDD2

DO2

CDT2

CVDD

S-8209A
(2)
CB2

RPASS
BAT2

CTLC2
RCTLC
RCTLD3

CTLD2

VSS2

RCB

CBFET2QCTLD2
RCTLD4

RCTLD

VDD3

DO3

CDT3

RDO4

RCTLD0QCTLD1RCTLD1

CFET

Remark Refer to "4.

RPASS
BAT3

CTLC3
CTLD3

P−

CVDD

S-8209A(3)
CB3

RCTLD2
RCO4

RVDD

CO3

VSS3

RCB

CBFET3

RCTLC0DFET

External components list" for constants of external components.
Figure 6

Caution 1.
2.

12

The connection example may be changed without notice.
It has not been confirmed whether the operation is normal or not in circuits other than the connection
example. In addition, the connection example and the constants do not guarantee proper operation.
Perform thorough evaluation using the actual application to set the constants.

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

2. 2 Operation
Following is about the operation of protection circuit with S-8209A Series for multi-serial cell shown in Figure 6.
Setting bipolar transistors (QCTLD1, QCTLD2) to the circuit in Figure 6 allows adding the function to transmit theoverdischarge status from the top (S-8209A (1)) to the bottom (S-8209A (3)). By this, even if any IC among theS-8209A (1) to (3) first goes in the overdischarge status, it is possible to turn on all other cell-balance control FETs
(CBFET) of the S-8209A Series. Thus cell-balance is certainly adjusted.
Following is about the operation in the status to inhibit discharge, when the S-8209A (2) detects overdischarge, andthe S-8209A (1), (3) are in the normal status.
1. The S-8209A (2) goes in the overdischarge status when BAT2 decreases to VDL or less by discharging. The DO2
pin is set in high impedance.
2. The S-8209A (1) also goes in the overdischarge status via the DO2 pin to the CTLD1 pin.
3. The S-8209A (1) turns on the cell-balance control FET (CBFET1) by the discharge cell-balance function.
4. The S-8209A (1) in the overdischarge status turns off DFET via a bipolar transistor (QDO) and inhibits discharging
to a load connected between P+ and P−.
5. The P− pin is pulled up by a load connected between P+ and P−.
6. QCTLD1, QCTLD2 are turned off and the CTLD3 pin of the S-8209A (3) is set in high impedance.
7. The S-8209A (3) also goes in the overdischarge status. The cell-balance control FET (CBFET3) turns on by thedischarge cell-balance function.
As mentioned above, even in case that the S-8209A (2) first detects overdischarge by voltage drop in BAT2, theoverdischarge status is transmitted from the S-8209A (1) to S-8209A (3) via QCTLD1, QCTLD2. As a result all (1) to (3)of the S-8209A go in the overdischarge status so that cell-balance is adjusted by the discharge cell-balance function,
when each BAT is more than VDL. The cell-balance FET which corresponds to each battery turns off by the voltagesof BAT1 to 3 that decreased to VDL or less.
And QCTLD1, QCTLD2 are turned on by connecting a charger between P+ and P− after inhibit discharging, and the
CTLD3 pin is pulled down to the level of VSS3 pin. In this case, the cell-balance control FET (CBFET3) turns off
although the voltage of BAT3 does not reach VDL or less.
Caution If a battery having the voltage VBL or more, or a battery having the overdischarge release voltage(VDU) or less is not included among batteries when composing a protection circuit shown in Figure
6, the cell-balance control FET may turn on immediately after connecting the battery. To turn off thecell-balance control FET, connect a charger between P+ and P−.

13

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

2. 3 Timing chart of overdischarge detection
tDET

tREL

tREL

VDD1
VDU (1)
VDL (1)CB1

CB1
VSS (1)

VDU (2)
VDL (2)VDD2VSS (2)VDD3VDU (3)
VDL (3)CB3

CB3

VSS (3)

VDD1
VDD2
VDD3
VSS3

DO1
DO2
DFET gate voltage

DO3

Charger connection
Load connection
Status to inhibit discharge

Normal status*1.

In this period, the charge current flows via a parasitic diode in the DFET.
Figure 714*1

Normal status

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

2. 4 Demonstration data of discharge cell-balance detection
The demonstration data shows cell-balance for 3-serial lithium ion rechargeable battery using the S-8209AAA.
S-8209AAA discharge cell-balance

Absolute value of battery voltage [V]

3.5
3.4

BAT2

3.3
3.2
3.1
3.0

BAT3

2.9

BAT1

2.8

VDU

2.7
2.6

VDL

2.5
2.4
0

200

400

600

800

1000

1200

1400

1600

1800

2000

Time [min.]Load connection
DFET Gate

Figure 8
Test conditions
Test circuit: Figure 6
IC: S-8209AAA (VCU = 4.100 V, VCL = 4.000 V, VBU = 4.050 V, VBL = 4.000 V, VDL = 2.500 V, VDU = 2.700 V)
Battery: 3-serial cell lithium ion rechargeable battery, Nominal capacitance: 2.9 Ah, Size: 18650
RPASS: 51 Ω (1 W) → bypass current = 2.5 V / 51 Ω = 49 mA
Load: 100 ΩBattery voltage’s oscillation
1. The cell-balance control FET turns off when the battery voltage decrease to the overdischarge detection voltage(VDL) or less.
2. Discharge via the cell-balance control FET stops so that the battery voltage rises.
3. The cell-balance control FET turns on when the battery voltage increases to the overdischarge release voltage(VDU) or more.
4. Discharge via the cell-balance control FET starts so that the battery voltage falls.
Repeating the procedures 1 to 4 enables to adjust cell-balance.

15

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

3. Examples of application circuit
The circuit examples shown in Figure 9 to Figure 11 are recommended when a low-resistance SENSE resistor is used.
These circuits enable accurate overcurrent protection.

3. 1 10-serial cell protection circuit added the discharge overcurrent protection function(Charge pin and discharge pin are integrated, S-8269B Series)
B+

P+

RCO3

RDO3

CO

R202

QDO

QCO

RDO2

RCO2

CTLD
RCO1

VDD

DO CDT
S-8209A
IC1CTLC CB
VSS

CVDD
CCDT

RVDD
RPASS
BAT1

RCB CBFET1

RDO1
RCTLC
RCTLD

CO

VDD

DO

CDT

CVDD

S-8209AIC7CTLC CB
CTLD
R201

N201

RCTLD
VOUT VIN
S-812C50A
IC12
VSS

CL

CO

C201

N101
RVM

P101

DO VINI

CO

CTLD
RCTLD

RDO4
N103

ZINI

VSS

CO

VDD

DO

CDT

CTLD

RINI

VSS

P−
DFET

Remark Refer to "4.

16

RVDD
RPASS
BAT8

RCB
CBFET8

VDD

TB

CFET

CVDD

CVDD

RVDD
RPASS

BAT9

RCB
CBFET9CVDD

S-8209AIC10CTLC CB

N104

RDO5

CBFET7

RCTLC

R102

RCO4

VSS

DO CDT
S-8209AIC9CTLC CBVM VDDS-8269B C101
CO VSS
IC11

RCB

RCTLC

R101

ZVM

BAT7

VDD

DO CDT
S-8209AIC8CTLC CB

CIN

RCTLD

RPASS

RCTLC

CTLD
N202

VSS

RVDD

RSENSE

External components list" for constants of external components.
Figure 9

RVDD
RPASS
BAT10

RCB
CBFET10B−

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

3. 2 10-serial cell protection circuit added the charge and discharge overcurrent protection
functions (Charge pin and discharge pin are integrated, S-8269B Series)
B+

P+

RCO3

R103

P102

RDO3

CO

R202

DO CDT
S-8209A
IC1CTLC CB

QDO

QCO

R104

RCO2

RDO2

CTLD
RCO1

VDD

VSS

CVDD
CCDT

RVDD
RPASS
BAT1

RCB CBFET1

RDO1
RCTLC
RCTLD

CO

VDD

DO

CDT

CVDD

S-8209AIC7CTLC CB
CTLD
R201

N201

RCTLD
VOUT VIN
S-812C50A
IC12
VSS

CL

CO

C201

N101
RVM

P101

N102

DO VINI

CO

CTLD
RCTLD

RDO4
N103

ZINI

VSS

CO

VDD

DO

CDT

CTLD

RINI

VSS

TB

DFET

Remark Refer to "4.

RVDD
RPASS
BAT8

RCB
CBFET8

VDD

P−
CFET

CVDD

CVDD

RVDD
RPASS

BAT9

RCB
CBFET9CVDD

S-8209AIC10CTLC CB

N104

RDO5

CBFET7

RCTLC

R102

RCO4

VSS

DO CDT
S-8209AIC9CTLC CBVM VDDS-8269B C101
CO VSS
IC11

RCB

RCTLC

R101

ZVM

BAT7

VDD

DO CDT
S-8209AIC8CTLC CB

CIN

RCTLD

RPASS

RCTLC

CTLD
N202

VSS

RVDD

RSENSE

RVDD
RPASS
BAT10

RCB
CBFET10B−

External components list" for constants of external components.
Figure 1017S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

3. 3 10-serial cell protection circuit added the charge and discharge overcurrent protection
functions (Charge pin and discharge pin are separated, S-8269B Series)
B+

P+

RCO3

R103

P102

RDO3

CO

R202

DO CDT
S-8209A
IC1CTLC CB

QDO

QCO

R104

RCO2

RDO2

CTLD
RCO1

VDD

VSS

CVDD
CCDT

RVDD
RPASS
BAT1

RCB CBFET1

RDO1
RCTLC
RCTLD

CO

VDD

DO

CDT

CVDD

S-8209AIC7CTLC CB
CTLD
R201

N201

RCTLD
VOUT VIN
S-812C50A
IC12
VSS

CL

CO

C201

N101
RVM

P101

N102

DO VINI

CO

CTLD
RCTLD

RDO4
N103

ZINI

VSS

CO

VDD

DO

CDT

CTLD

RINI

VSS

CHA−
CFET

Remark Refer to "4.

18

DFET

RVDD
RPASS
BAT8

RCB
CBFET8

VDD

TB

DIS−

CVDD

CVDD

RVDD
RPASS

BAT9

RCB
CBFET9CVDD

S-8209AIC10CTLC CB

N104

RDO5

CBFET7

RCTLC

R102

RCO4

VSS

DO CDT
S-8209AIC9CTLC CBVM VDDS-8269B C101
CO VSS
IC11

RCB

RCTLC

R101

ZVM

REB+

BAT7

VDD

DO CDT
S-8209AIC8CTLC CB

CIN

RCTLD

RPASS

RCTLC

CTLD
N202

VSS

RVDD

RSENSE

External components list" for constants of external components.
Figure 11

RVDD
RPASS
BAT10

RCB
CBFET10B−

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

3. 4 10-serial cell protection circuit added the discharge overcurrent protection function(Charge pin and discharge pin are separated, S-8239A Series active "L" product)
P+

QCO

RCO3

RDO3

QDO

RCO2

RDO2

CO
VDD
DO
CDT
S-8209A
IC1 CB
CTLC
CTLD VSS

RVDD
CVDD

RPASS

CCDT

BAT1
RCB CBFET1

RCTLC
CO
VDD
DO
CDT
S-8209A
IC6 CB
CTLC
CTLD VSS

RCTLD

RCTLC

CO
VDD
DO
CDT
S-8209A
IC7 CB
CTLC
CTLD VSS

RCTLD

RCTLC

CO
VDD
DO
CDT
S-8209A
CTLC CBIC8CTLD VSS

RCTLD
R202
RCTLC
RCO1

R201

N201

RDO1

CO
VDD
DO
CDT
S-8209A
IC9 CB
CTLC
CTLD VSS

RCTLD
R105
R101
N101

RVM
P101
RINI

N103
RCO4

C201
RCTLC
C101

CO
VDD
DO
CDT
S-8209A
IC10 CBCTLC
CTLD VSS

RCTLD

ZINI

RDO4
RDO5

CHA−
DIS−

VM DP
S-8239A
DO VDDIC13
VIN VSS

RVDD
CVDD

RPASS

BAT6
RCB CBFET6

RVDD

CVDD

RPASS

BAT7
RCB CBFET7

RVDD

CVDD

RPASS

BAT8
RCB CBFET8
RVDD
CVDD

RPASS

BAT9
RCB CBFET9

RVDD

CVDD

RPASS

BAT10
RCB CBFET10

TB

N102
RSENSE

CFET

Remark Refer to "4.

DFET

External components list" for constants of external components.
Figure 1219

S-8209A Series

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

3. 5 10-serial cell protection circuit added the discharge overcurrent protection function(Charge pin and discharge pin are separated, S-8239A Series active "H" product)
P+
QCO

RCO3

RDO3

QDO

RCO2

RDO2

CO
VDD
DO
CDT
S-8209A
IC1 CB
CTLC
CTLD VSS

RVDD
CVDD

RPASS

CCDT

BAT1
RCB CBFET1

RCTLC
CO
VDD
DO
CDT
S-8209A
IC6 CB
CTLC
CTLD VSS

RCTLD

RCTLC

CO
VDD
DO
CDT
S-8209A
IC7 CB
CTLC
CTLD VSS

RCTLD

RCTLC
RCTLD
R202

RCO1

RCTLC
R201

N201

RDO1

CO
VDD
DO
CDT
S-8209A
IC9 CB
CTLC
CTLD VSS

RCTLD
R105
R101
N101

RVM

RINI
RCO4

RDO4

VM DP
S-8239A
DO VDDIC13
VIN VSS

DIS−

CO
VDD
DO
CDT
S-8209A
IC10 CBCTLC
CTLD VSS

RCTLD

N103
TB
RSENSE

CFET

Remark Refer to "4.

20

RCTLC

ZINI

RDO5
CHA−

C201
C101

CO
VDD
DO
CDT
S-8209A
CTLC CBIC8CTLD VSSDFETExternal components list" for constants of external components.
Figure 13

RVDD
CVDD

RPASS

BAT6
RCB CBFET6

RVDD

CVDD

RPASS

BAT7
RCB CBFET7

RVDD

CVDD

RPASS

BAT8
RCB CBFET8
RVDD
CVDD

RPASS

BAT9
RCB CBFET9

RVDD

CVDD

RPASS

BAT10
RCB CBFET10CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

3. 6 5-serial cell protection circuit connected by connectors
In the application that pins are connected by connectors as seen in the application circuit below, safety is enhanced
since both charge and discharge stop even if the connectors are disconnected.
P+
QCO

RCO3 QDO

RDO3

RCO2

RDO2

Welding or
Soldering

CO1

RCTLC
RCTLD3QCTLD2RCTLD

RCTLD4
RCTLC

RCTLD

RCTLC
RCTLD

RCTLC

RCO1

RCTLD

RDO1

RCTLD0
RCO4

DO1
CDT1
S-8209A
IC1 CB1
CTLC1
CTLD1 VSS1
CO2

DO2
CDT2
S-8209A
IC2 CB2
CTLC2
CTLD2 VSS2

CO3

CTLD3 VSS3

CTLD4 VSS4RCB CBFET1
CVDD

CTLD5 VSS5

Connector

RVDD
RPASS

BAT2

RCB
CBFET2
RVDD
CVDD

RPASS

BAT3
RCB
CBFET3
CVDD

RVDD
RPASS

BAT4
RCB
CBFET4
RVDD

VDD5

DO5
CDT5
S-8209A
IC5 CB5
CTLC5

RPASS

BAT1

VDD4

DO4
CDT4
S-8209A
IC4 CB4CTLC4CO5CCDT CVDD

VDD3

DO3
CDT3
S-8209A
IC3 CB3
CTLC3

CO4

RVDD

VDD2

RCTLC0RCTLD2
RDO5

VDD1

CVDD

RPASS

BAT5
RCB
CBFET5RDO4RCTLD1

Welding or
Soldering
QCTLD1

P−
CFET

DFET

Remark Refer to "4.

External components list" for constants of external components.
Figure 1421

S-8209A Series
4.

CMOS IC Application Note
Rev.2.1_00

Usage Guidelines

External components list
Table 4 shows external components in the connection examples in Figure 1, Figure 6 and Figure 9 to Figure 14.
Table 4 (1 / 2)
SymbolIC1 to IC10
IC11
IC12
IC13
CBFET1 to
CBFET10
CFET
DFET
CCDT
CIN
CL
CVDD
C101
C201*2
N101
N102
N103
N104
N201
N202
P101
P102
QCO
QDO
QCTLD1QCTLD2RCB
RCO1*3
RCO2
RCO3
RCO4
RCTLC*4
RCTLD*4
RCTLC0RCTLD0RCTLD1RCTLD2
RCTLD3
RCTLD4
RDO1*3
RDO2
RDO3
RDO4
RDO5
REB+
RINI
RPASS*5
RSENSE*5

22

Typical
−
−
−
−

Unit
−
−
−
−

Components name
S-8209A
S-8269B*1
S-812C50A
S-8239A*1

−

−

−
−
−
0.1
0.1
0.1
0.1
1
−
−
−
−
−
−
−
−
PNP
PNP
NPN
PNP
10
−
510
1
1
1
1
1
1
1
4.7
1
4.7
−
510
1
1
−
10
1
−
−

−
−
−
μF
μF
μF
μF
μF
−
−
−
−
−
−
−
−
−
−
−
−
MΩ
−
kΩ
MΩ
MΩ
kΩ
kΩ
kΩ
kΩ
MΩ
MΩ
MΩ
MΩ
−
kΩ
MΩ
MΩ
−
MΩ
kΩ
−
−

Maker

RemarkNecessary
Necessary
Necessary
Necessary−−

User setting

−
−
−

−
−
−
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
−−
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
−
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
−
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
−
ROHM CO., LTD.
ROHM CO., LTD.
−−GRM188
GRM188
GRM188−−SSM3K7002KF
SSM3K7002KF
SSM3K7002KF
SSM3K7002KF
SSM3K7002KF
SSM3K7002KF
SSM3J168F
SSM3J168F
2SB1198K
2SB1198K
2SC2412K
2SB1198K
MCR03
−
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
−
MCR03
MCR03
MCR03
−
MCR03
MCR03
−
−

ABLIC Inc.
ABLIC Inc.
ABLIC Inc.
ABLIC Inc.

User setting
User setting
User setting
User setting
User setting
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
User setting
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
User setting
Recommended
Recommended
Recommended
User setting
Recommended
Recommended
User setting
User setting

CMOS IC Application Note
Rev.2.1_00

S-8209A Series

Usage Guidelines

Table 4 (2 / 2)
Symbol
RVDD
RVM
R101
R102
R103
R104
R105
R201*2
R202
TB*6
ZINI
ZVM*7

Typical
470
1
470
5.1
1
510
1
1
100
−
−
−

Unit
Ω
kΩ
Ω
kΩ
MΩ
kΩ
MΩ
kΩ
Ω
−
−
−

Components name
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
MCR03
−
UFZV3.6B
1SMB5930B

Maker
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
ROHM CO., LTD.
−
ROHM CO., LTD.
Diodes Incorporated

RemarkRecommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
Recommended
User setting
Recommended
User setting*1. Select this product according to the overcurrent detection voltage that you will use.
For details, refer to datasheet of each product.
*2. At the moment when the S-8269B Series (Figure 9 to Figure 11) or S-8239A Series (Figure 12, Figure13) detects theovercurrent and turns off DFET, a spike voltage generated in BAT8 (Figure 9 to Figure 11) or BAT9 (Figure 12,
Figure13) may result in transient change of the power supply of the S-8269B Series or S-8239A Series through N201
and cause the S-8269B Series or S-8239A Series to malfunction for overcurrent detection. This phenomenon can beprevented by setting C201 and R201.
The constant of C201 and R201 is normally 1 μF × 1 kΩ = 1 mF × Ω. However, since the spike voltage generated in BAT8
or BAT9 differs depending on each application, perform thorough evaluation about the power supply transient change
and overcurrent protection function of the S-8269B Series or S-8239A Series using the actual application to set C201
and R201.
*3. Set the resistance with attention to VGS rated value of FET.
*4. In order to prevent from damage when an overvoltage is applied to the IC, select RCTLC and RCTLD from 1 kΩ to 100 kΩ.
*5. Pay attention to the rated electric powers.
*6. TB: Thermal Breaker
When a TB is not necessary, connect the same protection resistor as RCTLC or RCTLD.
*7. When building a protection circuit for 10-serial or more cells, connect ZVM so that the VM pin voltage does not exceed
the absolute maximum rating.
Caution 1. The constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the connection
examples. In addition, the connection examples and the constants do not guarantee proper operation.
Perform thorough evaluation using the actual application to set the constants.
3. Set VVM as follows to release the S-8269B Series from the discharge overcurrent status when a load is
open.
• "3. 1 10-serial cell protection circuit added the discharge overcurrent protection function (Charge
pin and discharge pin are integrated, S-8269B Series)" or "3. 2 10-serial cell protection circuit
added the charge and discharge overcurrent protection functions (Charge pin and discharge pin are
integrated, S-8269B Series)"
RVMS
VVM = VP+ ×≤ VRIOV or VDIOV1
RCO1 + RCO4 + RVM + RVMS
• "3. 3 10-serial cell protection circuit added the charge and discharge overcurrent protection
functions (Charge pin and discharge pin are separated, S-8269B Series)"
RVMS
VVM = VP+ ×≤ VRIOV or VDIOV1REB+ × (RCO1 + RCO4)+ RVM + RVMS
REB+ + RCO1 + RCO4
4.

RemarkSet VVM as follows to release the S-8239A Series from the discharge overcurrent status when a load is
open.
• "3. 4 10-serial cell protection circuit added the discharge overcurrent protection function (Charge
pin and discharge pin are separated, S-8239A Series active "L" product)" or "3. 5 10-serial cell
protection circuit added the discharge overcurrent protection function (Charge pin and discharge
pin are separated, S-8239A Series active "H" product)"
RVMS
VVM = VP+ ×≤ VDD11 − VRIOVRCO1 + RCO4 + RVM + RVMS

VVM:
VP+:
RVMS:
VRIOV or VDIOV1:
VDD11:

VM pin input voltage
P+ pin voltage
Resistance between VM pin and VSS pin
Release voltage of discharge overcurrent status
Input voltage between VDD pin and VSS pin of the S-8239A Series

23

S-8209A Series
5.

Usage Guidelines

CMOS IC Application Note
Rev.2.1_00

Precaution• The usage described in this application note is typical example with our IC.
Perform evaluation fully before use.
• When designing for mass production using an application circuit described herein, the product deviation andtemperature characteristics of the external components should be taken into consideration. ABLIC Inc. shall notbear any responsibility for patent infringements related to products using the circuits described herein.
• ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement byproducts including this IC of patents owned by a third party.

6.

Related source
Refer to the following datasheet for details of the S-8209A Series.
S-8209A Series

Datasheet

The information described in this application note and the datasheet is subject to change without notice.
Contact our sales representatives for details.
Regarding the newest version, select product category and product name on our website, and download the PDF file.
www.ablic.com

24

ABLIC Inc. website

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information describedherein.

4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due tothe use of the products outside their specified ranges.

5.

Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.

6.

When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-relatedlaws, and follow the required procedures.

7.

The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,biological or chemical weapons or missiles, or use any other military purposes.

8.

The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.

9.

In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products areallowed to apply for the system on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of thisdocument described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07

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