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Silicon carbide: a new superconductor in the diamond family ••••••••••Markus Kriener•••28"&'()$*+&
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Low Temperature and Materials Sciences (Kyoto University)
Number 12, JUNE 2008

Table of Contents
Research Reports
Pseudospin Soliton in the Bilayer !=1 Quantum Hall Effect•••••••••••••••••••••••••••••••••••••••••••••••••Akira Fukuda and Anju Sawada•••3
Realization of the 1/3 Magnetization Plateau in Square-Lattice Quantum Spin systems••••••••••••••••••••••••••••••••••••Yoshihiro Tsujimoto, Hiroshi Kageyama,
Yoshitami Ajiro,and Kazuyoshi Yoshimura•••12
Exotic Superconductivity in the Hidden Order State of Heavy Fermion URu2Si2•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Yuichi Kasahara•••21
Silicon carbide: a new superconductor in the diamond family••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••Markus Kriener•••28

From the LTM Center
Smart Monitoring System for Recovery Helium Gas•••••••••••••••••••••••••••••••••••••••••••Toshikazu Arai and Akira Matsubara•••36

Featuring Article
Report on LTM Center Workshop 6•••••••••••••••••••••••••••••••••••Yutaka Sasaki•••41

LTM Center Seminars •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••73
From Organizing Committee
Amounts of Cryogen Consumptions : Yoshida Campus, Uji Campus and Katsura Campus••••76
Staffs contributing to Cryogen Supply and Responsible Persons for He Gas Recovery Stations ••78
Member of the Committees : Steering Committee and organizing Committee••••••••••••••••79

Call for Manuscript•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••81
Editor’s Note•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••82"""2()!À1*+,-./0123456789:;<8"
Pseudospin Soliton in the Bilayer !À1"Quantum Hall Effect=>?, A>BCÁÂÃŠ…†‡ˆ‰Š‹Œ•8ŽA. Fukuda and A. Sawada
Research Center for Low Temperature and Materials Sciences, Kyoto University
We investigate a soliton lattice - a domain structure of pseudospins, in the bilayer quantum Hall state at total
Landau level filling factor !=1, with an in-plane magnetic field, where the vertical and in-plane components ofthe pseudospin represent the layer degree of freedom and phase difference between two layers, respectively. An
anomalous peak in the magnetoresistance Rxx appears at the commensurate - incommensurate transition point.
The Rxx at the peak behaves highly anisotropic for the angle between the in-plain magnetic field B// and thecurrent, and indicates a formation of the soliton lattice aligned parallel to B//. Temperature dependence of the Rxx
peak reveals that the dissipation is caused by thermal fluctuations of pseudospin solitons. We construct a phase
diagram of the bilayer !=1 system as a function of B// and the total electron density.
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Q‹Œ70ÅTß1àá[19]1›œÖdK;bGß4à
p&q&r&s&[1] *+,-./01¬JÉÅ” b¹‰âˆefâÓß4ÓT—FbT#b ÙØàáÎmE1ÖdK`àZ.F. Ezawa, Quantum Hall Effects, World Scientific (1st ed. 2000, 2nd ed. 2008); RãÃ:É,*+,-./0, ½oâä (1998); ³åæç9O˜èé¢, ”na+•III ïã*+,-./0,¸ÁÃŠ8ê‘ (1999)à

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DEF+*+678)GHIJK1/3LMNO<Realization of the 1/3 Magnetization Plateau in Square-Lattice Quantum Spinsystems
PQRSTUVWTXYZ[TR\]^ÁÂÃŠÃŠù ñŠ‹Œ‰ MŠ¸û
Yoshihiro Tsujimoto, Hiroshi Kageyama, Yoshitami Ajiro, Kazuyoshi Yoshimura
Department of Chemistry, Graduate School of Science, Kyoto University

A new triple-layered perovskite (CuBr)Sr2Nb3O10 with the S = 1/2 square lattice, has been prepared by the
topotactic ion-exchange reactions. Specific heat measurements in zero fields revealed two anomalies at low
temperatures, suggesting the presence of successive phase transitions due to the competing ferro- andantiferromagnetic interactions in the layer. When the magnetic field is switched on, a novel phase appears which
is characterized by a 1/3-plateau of the full magnetization, which has only been theoretically expected fortriangular-based lattices.
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0.0441(19) Å2ÄIRòÃð @"ábáÄÅBrs+Ó
! 3. (CuBr)Sr2Nb3O10bX6;-<«.<ed¨Ž-8à›Lb}8M.(+), •LbH6, O
LbH6, ŽLb•6ÅNdædHâæ, ,æ, Ndúb z, LOm+y•bé`Îœ÷àÚ†é`1b1`4bGÅØ T ¡]¥òØN[<1`ìò1ï¤JÉ`4áÄÎpßJÉ`41"HÎ@é•b?Ó:()(CuX)LaNb2O7 (X = Cl, Br) [7]ˆ"(CuCl)Ca2Nb3O10 [8] 1 2 ` É ; : ‡ Ö d É 2 ¡ @"P4/mmmbùs/bVVGBrs+Ó4m (x,0,1/2) ;J

Å4k (x,x,1/2) 125% b`ìGê‘É`4QR.ÓÏˆÖdÉ`41" NáGq—ÎmE1@"(CuBr)Sr2Nb3O10bBrs+Ó4mN[<;J Å4kN[<1úéJKQR.ÎgâJÉ3üMÎ¢Ø:KÄáÏ@"©N[<1234úéÅx = 0.439(3), 0.457(2)ÄØ¡@"UisoÅU¡úbÍÐ12`É;,
0.020(3)‰Ä”•JK1"JÏJØÓú@"À…„x+ÅRwp = 9.15, 9.16 ÄNdædŠ‹ÖÉ`4;bb
U¡ú;{çéëæ1vôJÉ`4bGIŒÅGÅU¡úbQR.Ó ¡DJ`bÏÎžâ÷4áÄÅGðØ`àlBU„…†‡ˆ‰Šk&" !4(a)1SQUIDLô,Î‡`É0.1 TbLÍ§G
ââJK(CuBr)Sr2Nb3O10~•·¸bLMìIb†„ºõ›Îp÷à
1†õïÎ†„1ºõJØ`‘Î„
FKj_;-#’[6D, I = C / (T >.G) + I0 GL
bm~b8+Î¢`, j_;-âã C = 0.408(1)[emu K/mol], ’ [ 6 † „ . = 20.9 (3) K, I0=G>1.36(3) 0 10>4 [emu/mol]Î³KàC Å1 molbCu2+
1‹ŒÖd4æ$g = 2bÄðC=0.375 [emu K.mol]%Ä

]“JÉ`4áÄÏú, [õ8•GyøÓ{çñ4ò1¢ØAdKÄùØB4àábÄðg =2.176 1Ø4à’[6†„ÓDGß4áÄÅ, yšL›ò(AFM) J2¡šL›ò(FM) J1 bEÓ"_òGß4áÄÎŸYJÉ2¡T
Ëb’[6†„ÎÄ4(CuCl)LaNb2O7 (. = >9.6 K) ˆ(CuBr)LaNb2O7 (. =>5.1 K) ÄÅÈŸòGß4ÓšL›ÄyšL›H†
6‡ÓEö÷4Ä`ÙÔGÅÝ|JÉ`4à†„Ó
100Kÿ§1Ø4Ä, LMìÅ’ÉÊefb›”ÎyzJÉj_;-9’[6DÏúcdš‘4Ó…#
ÆyšL›n1Úëb•ˆÏØ•ÃÅpÖØ`à5Kÿ§GÅ†„1ÈJÉºõ›ÎpÖØ Ø4àL

! 4. (a)LÍ0.1 T³GbžLìIÄAžLì
I>Jb†„ºõ›àÔ6Åj_;-’[6Lbm~b8+Ÿ6à(b) LÍ0.1 T, 0.5 T´µ(c) 2, 3, 4 T³GbM/Hb†„ºõ›àMìââbcÏúL×efÓŠðÉ`4bÏUÙ
ÏÅ–ZGðØ`.
" H¼2bë„Î\®4K‘1ImââÎ¢Ø:
Kà!5Å—LÍ§1234‚ImCpb†„ºõ›ÎNÌm<JK;bGß4Ó, 9.3 K (Tc1)Ä7.5 K(Tc2)1˜#H¼2Îpß÷4:5b7-nÓƒw
1ÓâÖdKà
˜#H¼2Å*ÔŠòLO6<ª}•8Î;5…#Æ‡ˆ1ÚëbIÞGß¡,CsCoCl3ˆCsNiCl3ØUba™F+)GÓâÖdÉ
`4 [9]àƒ:É, (CuBr)Sr2Nb3O1012`É;*ÔŠ
LO6<ª-}•8Óáb˜#H¼2IÞ1_•
Ø™šÎ0KJÉ`4ÄEF4bÓ€›GßÏÙà
5V¡, Tc1 G¿L›ghÏúØ-úÏbL×ef! 5. LÍ0, 1, 2, 3, 5, 9 T³1234‚ImCp

Î;:K³sH(M1)Î.Kž, Tc2 Gœúb†„ºõ›àH6ÅF+Imbù8¡àþ¡e

fMJKgh(M2)‰ÄH¼2JÉ`4ÄÐâÖd

‘!Å—LÍ³bL×ImCm/T (J»)´µL

4à;JM1HÓß4«bL×efÄH¬Óß4b×i8<Ì7-Sm(P»)ÎœA÷àï6Å…

Øú, ádú:5b¼2†„ÅLÍ1š`qrÎ†õïbLbm~b8+Ë6à

{34Ä34Öd4à
HÎ1LÍÎ<„JÉc4Ä
Tc1 Å…§J Tc2 ÅA1-…JKàÖú1LÍÎš‘É`Ä•
3 TG+²b¼2Ó]51vôJ, Nbž;¼2†„Åš`LÍºõ›ÎpJKà
!6Å¼2†„bLÍºõ›ÎpJKH!Gß4à•5 TGL×efghÓ•;BâMÖdÉ
`4bÓAÏ4à
" (CuBr)Sr2Nb3O10Äé'(Î45lL›bmŸ ‡ˆÓØ`K‘ , F + Imb‹*

KGT 3(KG(GLMNO%P&G0 10>3 J/(K3 mol)) ÎÃ ¡1gâJCpÏúzJä áÄ1 :É, !5bþ‘!
1pJK

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Cm / T [J/(mol2K )]Îù8;¡, Öú1NdÎ8ï÷4áÄ1:ÉL×i8<Ì7- Sm [J/(mol K)]Î¢‘Kà Tc2 ´µ Tc1 Gb Sm Å‚L×i8<Ì
7-(Rln2)b, Ndæd{-b20%, 30%1/‡
Ø`àádÅ)b2#Æ›ÄLO6<ª-}•8ÎyzJÉbáÄGßÏÙà
" Imbš`LÍºõ›1£!J, 0.1 Tÿ-b

! 6. ImCp(T), LMìM(T)ÄNb†„¤ïdM(T)/dT,
LMM(H)1 :É³údK(CuBr)Sr2Nb3O10b†„>G
LÍH!à

LÍ³GbLM M/H b†„ºõ›Î\®Kà!4(c)1pJK

Ù1, LÍ2, 3, 4 T§Gb M/H bŸ61ƒwØW¡-Ó¡ÓùÉ¤d4àádúÛ¿Ó[ë4†„ÅLÍbg„ÄÝ1Ãð Ø¡, ImGž‘údK Tc2 Ä]“JÉ`4àVK, 1 T ÿ§b÷LÍ§GÅ, LMìb†„¤ï d(M/H)/dT

Ó•øæÎÄ4†„Ä Tc2 Ó]“JÉ`4(!4(b))àTc2 ÄÅÈŸò1 Tc1 GbÛ¿ÎLMb†„ºõ, Nb›ÏúÅ–ZGðØ`àádÅœú , M1HGÅš`†ú‡Î;:Kõï„efH1Ø:É2¡
K‘LMGÅ)ÉÊefÎyzJKÚTÓùF1

Ø:É`4K‘öÄÐâÖd4àHÎ, Q)GÅN8N.ºõ›bstÓ :É`4àobN8N.Î‡`ÉQSRââÎ¢Ø:ÉcKÓTc2ÿ§GJ
ÏÛ¿ÓÓâÖdcTVKTIm1Å!51pJKÛ¿ÓTc1Gƒw1ÅÓâÖdc7-nÓÃð S
Ó:ÉJVÙáÄÓß4à¥I›blkmnÄ^ˆSÛ‚Î‡`KââÓ&žb´tGß4à‹BTUŒU„Šk&
ImââG`¦JKDãbefHÅ, LO6<ª-}•8Î]õ§»JK•—Ø678ghÓ0^
JKi*.,-MN1õöJÉ`4áÄÎpßJÉ`4àƒ:É, LÍÎ„F4áÄ1 :É•ÕØefHÓ¨ŠÖd4áÄÓ‹ŒÖd41"!7(a)1¸ÁÃŠÛ©‹b¨.6Ž+*m<Î‡`ÉââJ
XY=`áÄ1,"*+MÖdKLMNO<
K (CuBr)Sr2Nb3O10 bLM M/Ms (Ms Åª«LM) Îp÷à-Ó 2.4 T < H < 8.2 T b¬S…GÓâÖdKà
ábNO<-Å†„b-…ÄÝ1Àƒw1Ø:É`ð
,ImˆLMìG¢‘KHUV1ÈøJÉ
9 KGuv÷4à!pJÉ`Ø`Ó
1.3 KÄ4.2 KbLMŸ6Å
{Ä-UéëGß4áÄÏú, NO<-Ó•‚1_ú1ØúØ`bÅm—ú‡b/0GÅØ , ~•·¸Î‡`K‘LMÓ g æbÛE›1 :É_ÁMÖdÉ`4ÄÄ;1Dzialoshinsky-MoriyaH†6‡ˆ6Žz-ðg~8:.ØUb7ïÓõö÷4ÏúöÄEFúd4à
Ú1Õ-ØbÅ, Q)GÓâÖ
dKLMNO<-Åª«LMb1/3bÄáÏGÓâÖdKáÄGß4à|¿, 1/3LMNO<-Åñ•ò
1a™Îv\ÄJKF+)G3¯ÖdÉ2¡, H–ò1;a™F+bCs2CuBr4ˆç[<Q8ðF+b
Cu3(CO3)2OHØUGÓâÖdÉ`4 [10, 11]àJÏJØÓú, LO6<ª-<JKDEF+)12`ÉÅF+ÄbíÐ›bñ•Ïú]¥11/2NO<-JÏ3¯ÖdÉ`Ø`àtu›ÄJÉ, '(edGpßÖd4Brs+búéÓ[ë4áÄ1 :Éñ4
òØDEF+Ïúcd,©J1 (J2) Ólh®1Ø:
É`4áÄ;EFúd4[12]à•0, ¯€úbñ•ò‹ŒG, $a0^H†
6‡ J3 (> 0)Î;E°J
KDEF+"µ12`É
1/3LMNO<-ÓIAd4áÄÓ”•ÖdK[13]àVKT1/3NO<! 7. (a) ª«LMMsGÎFMJK(CuBr)Sr2Nb3O10bLMà

ÓIAd4LÍMNbq

(b), (c) 1/3LMNO<-H1234L×'(bQR.à

žG*Ž~bmnefH

Ç…bL×Sé¹ÎÒLGpJÉ`4à

Óõö÷4áÄ;:‡ÖdÉ2¡, Q)ÄbÈø¬-Î\®4K‘1ÅÖúØ4H–ò˜¢Óî•Gß4à
J[
IöVGbÄáÏ, (CuBr)Sr2Nb3O10 GÓâÖdK1/3LMNO<-bŠ±ÅeƒGðÉ`Ø`àà8«.+678)1234LMb*+M]^Ó²³ú1 :ÉÏˆÖdÉ`4Ó [14], Nb]^Åp(S>m) = íã$p = 678ghb}‹TS =678ãTm = gQGBÎSéÄJKN[<ßK¡bLM%Ä
â#MÖd, S = 1/2bÍÐ, m = 1/6 Gß4Ïú p = 3 Ó³úd4à(CuBr)Sr2Nb3O10 ÅÛ‚MŠ-bS
éF+15ðCu2+Î]54:É`4bG, *+M]^ÎtY÷41Å2ÑÈx›Óïd4î•Óß4à
!7(b)RG(c)125btuØL×'(Îp÷àé](…G678ÓéëEÌ1Ì`KšL›=Ó, Ndæd(b)p´«n<.Ók = (2,G/3, 0), (c) k = (,G/3, 2,G/3) G upRGup,GdownRGup, · · · · ·Ä6<O[Ng1_£JÉ`4àábÔ12`ÉÅ, é•bšL›=ÓupRGdownÄ•†1_£JKCAFÎp÷(CuBr)LaNb2O7Ä“É`4àup>up>down '(bBâ›ÅQ)b’[6†„ÓDGß4áÄÄü^Ø¬-Óß4öÏÙà
VK, obL×'(, 5V¡678bÌðÓ‚Éì:K©šL›(Ó c »EÌ1V:É up>up>down'(ÎÄ:É`4 ÙØ—;EF4áÄ;Gð4àábÍÐ, •0^b(sÄ#0^b(s1ê H†6‡bs1‰ÐÓ[ë4áÄÏú
, ANNNI(Axial Next>Nearest>Neighbor)QR.GŽmNGð4Ï;ÍdØ`àJÏJ, 16 ÅVKÅ32 ÅNdædÊdK•0^Ä#0^sbÉÊÎE°÷4Ä, 1/3LMNO<-bS`0 (2.4 < H < 8.2 T) ˆÃð`ª«LÍ (Hs = 14.4 T)Îfƒ÷4áÄÅábQR.GÅÀt
uGßÏÙàL×'(Îž‘41Å
, LÍ³Gb³›+u€ˆNMRââÎ¢ØÙî•Óß4à
" •ž1, M2H15`É•J!®4àLMÅ1/3NO<-MN1µ¡£q11.6 TG$1g„÷4áÄ

Ïú, ábLÍGýŽL›¼2ÓŠðÉ`4ÄeBGð4àdM/dHb7-nÏú¢‘KýŽL›¼2
LÍÅ†„1¶UºõJØ`(!6)à€›LMÓØ`áÄÄ’[6†„ÓDGß4áÄÏú, M2HÎCAFÄÐâ÷4bÅA4Ø`àNbÄð
, J1#J2QR.1v©

Ä, ’[6†„Äª«LÍbæÏú

J1 = >51.5 K, J2 = 30.6 K, 5 V ¡ J2 / J1 = >0.59 Î ³ 4 à á b J2 / J1 I Å (CuBr)Sr2Nb3O10 Ó(CuBr)LaNb2O7 (J2 / J1 = >1.1)¡;LO6<ª-<JÉ`4áÄÎŸYJÉ`4à5V¡T
AN[<

bN[ÜÎúF4áÄ1 :ÉÇ…bF+âãÎúMÖB, NbÛ0 J1 Ä"J2 ;>?Gð4áÄÎ
pJÉ`4à
·VÔ(J2 / J1 = >0.50)0e1é`JÉ`4áÄÓ1/3NO<-b8Ib¸ÄØ:É`4bÏ;ÍdØ`.

•BŽ••‘’&" ]¥ò1, L›nbImÅ¼2†„¡Ëï…`†„MN12`É
C(T) S T d/! GœAÖd4íîò

Ø;3Îp÷àááGd ÅùsòØ#Æ›Î, ! ÅŽ+K8bïfb:ã$T S k!%ÎœA÷àyšL
›nbÍÐ(! = 1), TNÿ§GÅ|¿a#Æ(d = 3)Î|ëKL×efghÓHI÷4bG·V:ãd/!GÅ
JÏJ, !
3 ÄØ4àHÎ, (CuBr)LaNb2O71ÈJÉÅTN ¡Ëï…†b†„MNGT 3D1ƒ:É`4à
5bþ‘!1p÷

T 2DÓ
Ù1, (CuBr)Sr2Nb3O10bÍÐ, :#ÆyšL›678o1ÈJÉ‹ŒÖd4

TC2 ¡…†b5 Kÿ§GÓâÖdKàábÙØ†„:ºDÅ:#ÆòØ678H¬Óš`áÄÎp

ßJÉ2¡, …i*.,-bñŠQ-ð1234:()ÄbH»Å#Æ›bÌ-ÎyzJÉbáÄG
ßÏÙàQ)ÿÆ1;, a™F+bNiGa2S4ˆó>ýF+bSrCr8Ga4O1912`É;é•b†„:ºDÓ
ABCD†„1¼4VGHIÖdÉ`4[1, 15]àQââGÅ2KVGJÏ¢ØAdÉ`Ø`bG,¡

2…†VGT D1ƒÙÏUÙÏÎ\®4áÄÅXY=`´tGß4à
“B”PE&[õ8•G7Î‡`É•Õ:#ÆDEF+L›n,(CuBr)Sr2Nb3O10 ÎÐ7J, Imââ1 :É:() (CuX)LaNb2O7 (X = Cl, Br) GÅùúdØÏ:K˜#H¼2ˆ…†GbT 2DÎÓâJKàQ)G•;Ú½÷®ðIÞÅLMââGù8JK*+MÖdKLMNO<-Gß¡, DEF+Îv\ÄJK)Gß41;¬Aúcª«LMb1/3bæbÄáÏGNO<-ÓId4à
(CuBr)Sr2Nb3O10Gù8ÖdK™
ÏØ‡›Å, œú :#Æ›Ä678LO6<ª-}•8bÌ-bÛ0;KúÖdK;bGß4ÄE
Fúd4àÿ-bÛ0Å, XN[<ˆAN[<,NJÉnb¨Oý-Ž-b]^1ºõJÉ, Ndæd‚ÛØ4L›ÓId4áÄÎpJÉ`4à&ž, ]Eb(CuX)An>1BnO3n+1b‹ŒÎÖú1˜¢÷4áÄ1:É, LO6<ª-<JKDEF+yšL›nb›ˆÎ0S

ñeGð4ÄEFÉ`4àno&" Q‹ŒÎÑ‘41±K¡, ÛHŠ‹Œöbý8á-1”ÃØ4¾»§ˆIðá[6Î7ðVJKà
ImââGÅÁÂÃŠMŠ‹Œµb¿À1ÁÚ¹´µ1>Âé¹ø12ýÃ1Ø¡VJKàVK, šLÍLMââGÅ¸ÁÃŠ‡›‹ŒµbÄÎošLÍ‰Š‹Œ()b=€ÅÆ·, ÞÇÈÇÚ¹, Û©É]¹ø12ýÃ1Ø¡VJKàNJÉ, LTM•8Ž-bÊ•1ÅSQUIDLô,Î‡`KLMìâ
â12`Éë—¢£¤¥1¾Ê§7`É2¡V÷àábÍÎË¡ÉÌ 2ÍÎJ-jV÷àQ‹ŒÅ‰‹ØÏ'‹Œ(A) (´tÜ%Ý17684018), ‰‹ØÚâMN‹ŒÐLO6<ª-}•8ÓÑ4•J`‡›Ò(´tÜ%Ý19052004) ´µÐÛ¿*+‡ˆbÑÓ#•J`‡ñÎ['•‡ˆ#Ò(´tÜ%Ý
16076210)bÙÚÎ{3É¢Ø:É`V÷à½²$PQ%ÅÁÂÃŠ+Ì-á.COENÌ+OyÐ‡ˆ‰Šb•vÔ'ÕÄ#ýYÖ7ÄÎ×ÔÒ´µ, Úo‹ŒºÄJÉëQŠØˆX‘Ïúb"Þ;{3É`V÷à

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•–—˜&
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UV" W$Hiroshi Kageyama%ÁÂÃŠñŠ‹Œ‰MŠ¸û" ÷¹ø
ðñ" 1993&" ÁÂÃŠñŠõÙ
1995&" ÁÂÃŠÃŠùñŠ‹Œ‰þý´/þÿ
1998&" ÁÂÃŠÃŠùñŠ‹Œ‰üý´/þÿTñŠüý
1998&" ¸ÁÃŠ‡›‹ŒµÚ'
2003&" ÁÂÃŠÃŠùñŠ‹Œ‰Ú¹ø$2007& ¡÷¹ø%XYZ[
ÁÂÚÛÜÝÃŠl¿Þ#$
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2005&" ÁÂÃŠñŠ‹Œ‰MŠ¸û" 21COEäº‹ŒºR\]^ÁÂÃŠñŠ‹Œ‰MŠ¸û" ¹ø
ðñ" 1986&" ÁÂÃŠÃŠùÚŠ‹Œ‰üýž‹´/" ‹Œ:q¦â9Š" " " 1986&" =€ÃŠñŠõMŠ‰Ú'" " " 1987&" ÁÂÃŠÚŠüý¤³" " " 1988&" ÁÂÃŠñŠõMŠ‰Ú'" " " 1993&" ÁÂÃŠÃŠùñŠ‹Œ‰MŠ¸ûÚ¹ø
" " " 2002&" ÁÂÃŠÃŠùñŠ‹Œ‰MŠ¸û¹ø, I%_`a+) URu2Si2 bcdKefgh1234ijklmnopq
Exotic Superconductivity in the Hidden Order State of Heavy Fermion URu2Si2
rst]ÁÂÃŠÃŠùñŠ‹Œ‰*Yuichi Kasahara
Graduate School of Science, Kyoto University" We report that charge and thermal transport measurements on ultraclean single crystals of URu2Si2, in
which the superconducting state is embedded within the so-called “hidden order” phase, reveal a number of
unprecedented superconducting properties. We also provide strong evidence for a new type of
unconventional superconductivity with two distinct gaps having different nodal topology.
A™CDEF&" ›ùÏú 100 &Ó.ÄÙÄJÉ`4&ëG;opqÅ)n‡ñŠb³U´tb]5Gß¡T”b"—ÎFÿJå3É`4àáá 20 &9T`A—4šH¬a+)‡ˆ12`Éƒ9b BCS o
pqn1ÅùúdØ`ÚTÎ;5opqnÓã”
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Silicon carbide: a new superconductor in the diamond family
M. Kriener
Department of Physics, Kyoto University
1. Introduction
Diamond and silicon are wide-gapped semiconductors / insulators which exhibit indirect energy gapsof about 5.5 eV (diamond) and 1.1 eV (silicon). They are well-known for their outstanding physicalproperties and technical applications, e.g. the excellent heat conductivity of diamond, its withstanding ofhigh electric fields, or the numberless applications of silicon in semiconductor technologies.
It is well-known, too, that the physical properties of these and other semiconductors can be influenced
by charge-carrier doping either by donator or acceptor atoms which changes their resistivity many orders ofmagnitude leading to intriguing properties. Small doping concentrations are widely used in the applicationof semiconductors. At higher doping levels the systems undergo an insulator-to-metal transition above acertain critical doping level, i.e. charge-carrier concentration, and further doping might even lead tosuperconductivity.
From the theoretical and experimental point of view superconductivity in doped semiconductors is an
outstanding issue. The prediction of superconductivity in Ge and GeSi and the suggestion that othersemiconductor-based compounds may exhibit superconductivity at very low temperatures were alreadygiven by Cohen in 1964 [1].
Indeed, some examples have been reported so far, e.g. self-doped GexTe [2], SnxTe [3], doped SrTiO3[4], or more recently doped silicon clathrates. [5 – 7] The superconductivity of the latter materials is the firstexample of compounds exhibiting superconductivity and realizing a covalent tetrahedral sp3 network withbond lengths similar to those in diamond.
However, before 2004 (C:B) [8] and 2006 (Si:B) [9] superconductivity was never reported for
diamond and cubic silicon in the diamond structure although there are several studies available concerning
hole-doped induced metallicity in silicon and carbon using boron, nitrogen, or phosphorus, e.g. Refs. [10],[11] and references therein. Therefore, it was an important progress to find superconductivity in thesecompounds upon boron doping, which attracted a lot of interest and stimulated many theoretical andexperimental studies in the last four years [12 – 25]. Boron has one electron less than carbon and silicon andhence acts as an acceptor leading to hole doping. Both compounds are type-II superconductors with Tc
values of 11.4 K (C:B) and 0.35 K (Si:B). The upper critical fields are Hc2 [ 8.7 T and 0.4T, respectively[9,19].
In order to explain the superconductivity in diamond theoretical studies point towards two different
scenarios: (i) it is the result of a simple electron-phonon interaction [13,14,16,18] and (ii) it is caused by aresonating valence-bond mechanism [12,26,27]. The former model is based on a conventional

weak-coupling electron-phonon mechanism where the charge carriers are introduced into intrinsic diamondbands leading to a three-dimensional analog of the two-dimensional superconductor MgB2. The
superconductivity is attributed to holes located at the top of the zone-centered D-bonding valence bands
which couple strongly to optical bond-stretching phonon modes [14,16]. The latter model attributes thesuperconductivity to holes in the impurity bands rather than in the intrinsic diamond bands [12]. With thepremise that the doping level in superconducting diamond is close to the Mott limit the randomly
distributed boron atoms, i.e. their random Coulomb potential, may lift the degeneracy of the boron acceptor
states leading to a narrow half-filled band from which superconductivity develops.
However, experimental studies seem to support the former explanation and rule out the lattersuggestion [28,29], although a complete understanding of the superconducting phase is not yet obtained[27,30]. Recently, a theoretical study suggested the possibility to achieve superconducting transition
temperatures of the order of 100 K in C:B due to the exceptionally high Debye temperature of diamond andunder the precondition that the doped boron atoms are ordered [24].
& & In Ref. [31], we reported the discovery of superconductivity in a closely related system originatingfrom a well-known and widely used semiconductor, namely boron-doped SiC, the stoichiometric ''mixture''of the two afore discussed ''parent'' materials. SiC is more and more used for high-temperature, high-power,
and high-frequency applications due to its high thermal conductivity, the existence of large band gaps,
strong covalent bondings, chemical inertness, or its high withstand of radiation. Another hallmark of thissystem is the huge number (about 200) of crystal modifications with cubic (''C''), hexagonal (''H''), or
rombohedral (''R'') symmetry of the unit cell [32]. They are usually referred to as mC-SiC, mH-SiC, andmR-SiC, respectively.
The variable m gives the number of Si – C bilayers
consisting of a C and a Si layer stacking in the unit cell.
However, most of the available studies refer to thefollowing three polytypes: cubic 3C- (zincblende
structure, space group F-43m; ''ordered'' diamond) andhexagonal

2H-,

4H-,

and

6H-SiC(wurtzite,

moissanite-4H, and -6H structure, all space group P63mc).
The 2H-modification is the only ''pure'' hexagonal
modification, all other mH-SiC polytypes consist of

Figure 1: (a) Unit cell of diamond-related cubic

hexagonal

cubic

3C–SiC. The three bilayers consisting of C and Si

3C-modification is also labeled as K-SiC whereas thelayers are emphasized. The stacking sequence ishexagonal polytypes are generally denoted as H-SiC. Fig.

ABC – ... The green arrow denotes the <111>

1 gives a sketch of (a) the diamond-related modification

direction whereas the gray rods refer to the

3C-SiC and (b) the hexagonal 6H-SiC. The C – Si

tetrahedral bond alignment of diamond. (b) Fourbilayers are emphasized. In 3C-SiC both elements form

unit cells of hexagonal 6H–SiC. The six bilayers

face-centered cubic sublattices which are shifted by (1/4,of the stacking sequence ABCACB – ... are

1/4, 1/4) with respect to each other. Along the <111>emphasized. The green arrow denotes the <001>

direction

direction. For both drawings the software Vesta

and

the

cubic

bilayerelements.

stacking

of

The

the

diamondmodification is ABC – ..., for the polytypes 2H-, 4H-,

was used [33].

and 6H-SiC it is along the <001> direction ABAB – ..., ABAC – ..., and ABCACB – ...
Depending on the crystal modification, pure SiC exhibits an indirect energy gap between ~2 eV(3C-SiC) and ~3.3 eV (2H-SiC). Slightly doped SiC with donors and acceptors was intensely studied fornitrogen, phosphorus, boron, aluminum, etc. by ion-implantation or thermo-diffusion doping. Comparedwith other dopants, boron was found to have a much faster diffusion rate in SiC. Diffusion processes
mediated by the silicon interstitials and by carbon vacancies have been proposed to explain such fastdiffusion rates [34 – 37]. Under silicon-rich conditions the carbon-site substitution is dominating [38].
Among other dopants, the insulator-to-metal transition was observed recently in nitrogen-doped 4H-SiC at
carrier concentrations above 1019cm-3 [39].
Here we report resistivity and AC susceptibility of SiC:B. We discuss the H – T phase diagram derived
from AC susceptibility measurements and give a brief comparison of C:B and SiC:B focussing on thequestion, why SiC:B is a type-I superconductor whereas the „parent“ compound C:B is of type-II.
2. Experiment
Samples were prepared from submicron K-SiC powder (99%, WAKO, with a mean particle size of
0.27 Qm), silicon (99.99%), and amorphous boron (99%) by substitutional reaction sintering. The powders
were mixed in certain proportions (typically SiC/B/Si with 4:1:1 in molar ratio), ground thoroughly, andpressed into cylindrical pellets. They were then placed in an alumina boat (or tantalum box) and sintered ina pre-evacuated tube furnace at 1620 oC for 12 hours (with heating and cooling rates of 100 oC per hour) ina flowing mixed argon/hydrogen gas atmosphere (60/60 ml per minute). The as-prepared samples were cut
into slices and the surface was removed for transport measurements to better characterize the bulk
properties. The crystal grain morphology was examined by a field-emission scanning electron microscopy(FESEM, JEOL JSM6301F). An electron-probe microanalyzer with wavelength dispersive spectrometers(EPMA-WDS, JEOL JXA8200S) was employed for a quantitative elemental composition analysis. Powder
X-Ray diffraction (XRD) and Rietveld method were used for phase identification and lattice parameterrefinement [40]. The electrical resistivity was measured by a conventional four-probe technique, the Hall
coefficient by a five-probe AC technique with scanning fields from -7 to 7 Tesla using a commercial system(Quantum Design, PPMS). AC susceptibility measurements were performed using a mutual-inductancemethod in a commercial 3He refrigerator (Oxford Instruments, Heliox) inserted into a standard
superconducting magnet.
3. Analysis
The sintered samples have a black ceramic-like appearance but are not of single phase. Phasetransformation from 3C-SiC to 6H-SiC was reported to occur above 1700oC [41]. However, due to thewell-known thermodynamic size-effect [42], i.e. small particles exhibit a reduced activation energy formelting, grain growth, or phase transformation, the transformation temperature may be lower. We identified
three phase fractions by XRD pictures: 3C-SiC, 6H-SiC, and Si. No boron peaks were detected. The
volume fraction of the 6H phase can be estimated from the XRD peak intensity ratios based on theempirical formula of Ruska et al. [43]. Typically, 10-30% 3C phase is converted into 6H-SiC upon sintering.
We expect that the presence of liquid silicon facilitates the boron diffusion due to the much faster mass

transport compared to solid sintering, and enhances the boron-substitution efficiency. This also enhances the
carbon site substitution by silicon. The lattice parameter for the silicon peaks did not change during thesinter process, indicating that no boron was doped into silicon.
For the main phase 3C-SiC, the refined lattice parameter a increased after sintering, but merely by lessthan 0.1% from 4.3575(3) Å to 4.3618(4) Å. The XRD peaks related to the 6H phase did not change within
the experimental resolution. Since the atomic sizes of boron and carbon are comparable, but are muchsmaller than the atomic size of silicon, the minute change of the lattice parameters suggests that boron
substitutes at the carbon site in these samples. The crystal grain size grew more than an order of magnitudeafter sintering, as could be shown by FESEM images (not shown). We expect the boron substitution to beenhanced with a slow growth of crystal grains, and indeed by the present synthetic method, the samples hadmuch higher boron doping levels compared with previous reports [34 – 37]. EPMA analysis witharea-scans (within 50050 Qm2) at various positions occasionally detected less than 0.05 at.% Fe besides of
Si, C, and B for all samples without other impurity elements. The point analysis within 101 Qm2 on crystal
grains revealed less than 6 at.% boron, but this may include unreacted boron not incorporated in the SiC
structure, or unactivated boron doped into the interstitial site of SiC without providing charge carriers.
Room-temperature Hall-coefficient measurements were carried out for two samples, referred to as SiC-1
and SiC-2 in the following. The starting SiC/B/Si molar ratios were 4:1.15:1 for SiC-1 and 4:0.9:1 for
SiC-2. The deduced effective hole carrier concentrations for SiC-1 and SiC-2 were 1.9101021 cm-3 and1.0601021 cm-3, corresponding to a boron substitution of 3.9 and 2.2 at.% in the carbon site.
4. Resistivity and AC susceptibility
In Fig. 2 the temperature dependence of the electrical resistivity for SiC-1 and SiC-2 is shown.
Reflecting the high level of doping both samples become metallic. However, SiC-1 exhibits a much smaller
resistivity and almost linear temperature dependence at high temperatures due to a higher boron-doping
concentration. The slope d@/dT is always positive for SiC-1, whereas a small negative d@/dT is observed
below 20 K for SiC-2, suggesting a weak tendency of
localization of the carriers or a contribution from
non-metallic grain boundary resistance. The residual
resistance ratio RRR (@300K/@5K) is 10 and 5 for SiC-1 andSiC-2. The inset of Fig. 2 shows an expanded view of the
low-temperature data. Below 1.4 K (SiC-1) and 1.35 K(SiC-2),

theresistivity

drop

indicates

a

clear

superconducting transition. We note that despite the large
difference in the residual resistivity, Tc is nearly the sameand the transition width is less than 0.15 K for both
samples.
For SiC-1 temperature-dependent AC susceptibility
was measured with a small AC field of HAC = 0.01
Oe-rms at a frequency of 3011 Hz in zero and several
finite DC magnetic fields HDC parallel to HAC. The
measurements were performed upon cooling and

Figure 2: (a) Temperature dependence of theelectrical resistivity for SiC-1 and SiC-2. For
comparison, the resistivity of SiC-2 was divided
by 10. The inset shows the normalized
low-temperature resistivity R/R4K around thesuperconducting transition temperature for both
samples.

warming at constant HDC as well as upon sweeping HDC
up and down at constant temperature. The temperaturedependence of the in-field susceptibility data was taken
as follows: The external DC magnetic field was set above
Tc. Then the temperature was reduced down to ca. 300
mK (“field-cooling (FC) run”) and subsequently
increased above Tc (“warming after FC run”). In Fig. 3
the real part I’ and the imaginary part I” of the ACsusceptibility for HDC = 0, 20, 40, 60 Oe are shown. In
zero DC magnetic fields only one transition is found witha Tc of ~1.45 K, in good agreement with the resistivity. In
finite fields a large supercooling effect was observed. To
exclude the possibility of a poor thermal coupling
between sample and thermometer, we subsequently
repeated measurements at different temperature sweep
rates (not shown). We obtained the same curves
independent of the chosen sweep rate, guaranteeing thatthe observed supercooling behavior is an intrinsic

Figure 3: Temperature dependence of AC
magnetic susceptibility for SiC-1 measured indifferent DC magnetic fields. The upper panel
shows the real part I’(T) and the lower panel theimmaginary part I’’(T). The DC fields wereapplied above Tc. The data was taken uponfield-cooling and subsequent warming as
indicated by the arrows.

property of the sample and that the superconducting transition is a first order phase transition in finite fields.
We note that the hysteresis was also observed in the field-dependence of the AC susceptibility. Above about
110 Oe we didn’t find any sign of superconductivity. The observations of (i) the in-field hysteresis, (ii) the
absence of a hysteresis in zero field, and (iii) the very small value of the critical field give strong evidence
for type-I superconductivity. In this case, the observed critical field on warming corresponds to thethermodynamic critical field Hc(0), as discussed later.
The AC susceptibility signals are very robust. The value of the shielding fraction in the real part !’ isalmost field-independent. The imaginary part !’’ features additional shoulder peaks at the low-temperatureside, which is probably due to an inclusion of superconducting grains with slightly lower Tc. Single phasesamples or single crystals are desirable for future investigations.
5. H – T phase diagram and discussion
The H – T phase diagram deduced from the AC magnetic susceptibility is shown in Fig. 4. We
determined Tc(HDC) from the onset of superconductivity in the IF curves for both the field-cooling run(normal-to-superconducting transition) and the subsequent warming run (superconducting-to-normaltransition). Applying the conventional formula Hc(T) = Hc(0)[1-(T/Tc(0))H], we obtained a good fitting with

H [ 1.7 of the warming-run data. As discussed in Ref. [31], we identify this as the line of thethermodynamic critical field Hc(T) with Hc(0) = (115]5) Oe. The same procedure applied to the cooling-run
data yields H [ 1.5. We identify this transition as the upper limit of the intrinsic supercooling limit. The
corresponding transition field is denoted as Hsc (the subscript “sc” stands for “supercooling”) with anestimated Hsc(0) = (80]5) Oe.
The question arises why the superconductivity in SiC:B is of type I rather than of type II like in C:B[8] and Si:B [9]. First, the difference is reflected in the critical field strength, which is of the order of 100 Oe

for SiC:B in contrast to several Tesla for C:B and half aTesla for Si:B. Together with the experimental finding of
an in-field first-order superconducting phase transition in
SiC:B and the low value of Hc, this points towards a
type-I nature. Second, Sidorov et al. [44] report in their
specific-heat study on C:B "0 " 9 nm (deduced from Hc2)
and # " 163 nm (from n and $). This leads to %GL " 18 for
C:B, which places this compound into the type-II region.
From a specific-heat study using the sample SiC-1 wefind %GL " 0.36 < 1 / d2, i.e. the “border line” between
type-I and type-II superconductors, further supporting
our conclusion that SiC:B is of type I [45]. Unfortunately,for Si:B there is no specific-heat study available yet.
As far as we know, at the current state of research,
one may only speculate about the physical reasons
behind it. One possibility could be a much different
Fermi velocity vF in the case of SiC:B due to a possible
different shape of the Fermi surface. To clarify this,further experimental and theoretical work is necessary.

Figure 4: H–T phase diagram for SiC-1,
determined from the onset of superconductivity
in I’(T). The lower (upper) line corresponds tothe cooling (warming) runs. The supercooling
limiting field Hsc(T) corresponds to a transition
from the normal to superconducting states,
whereas the thermodynamic critical field Hc(T)denotes the transition from the superconducting
to normal states. The dashed lines are fits to thedata, see text for details.

In conclusion, we discovered bulk superconductivity in boron-doped SiC based on the diamondstructure and prepared by a substitutional sintering method. The zero-field value of Tc is about 1.4 K and thethermodynamic critical field Hc(0) was estimated as about 115 Oe. Moreover we found an in-field
hysteresis between subsequent cooling and warming runs of the temperature-dependent AC susceptibility
associated with a strong supercooling effect. This findings and a small value of the Ginzburg-Landauparameter % give strong evidence for type-I superconductivity.
This work was done in collaboration with Y. Maeno, Kyoto University and the group of Prof. J.
Akimitsu, Department of Physics and Mathematics, Aoyama-Gakuin University, Sagamihara, Kanagawa
229-8558, Japan: J. Kato, T. Muranaka, and Z.-A. Ren, who made the samples. This work was supported by
the 21st century COE programs, “High-Tech Research Center” Project for Private Universities: matching
fund subsidy, as well as “Diversity and Universality of Physics” from the Ministry of Education, Culture,
Sports, Science and Technology (MEXT), and a Grand-in-Aid for Scientific Research on Priority Area from
MEXT.

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Curriculum Vitae
1994 – 2001

studies of mathematics and physics,
University of Cologne, Germany (R.8, ð[S)02 / 2001

diploma in physics

07 / 2005

PhD in physics
University of Cologne, Germany

08 / 2005 – 01 /2006 postdoc, University of Cologne, Germany
since 02 / 2006

postdoc, Quantum Materials Lab, Kyoto University

回収ヘリウムガス監視システム

Smart Monitoring System for Recovery Helium Gas
新井敏一, 松原明

京都大学低温物質科学研究センター
Toshikazu Arai and Akira Matsubara
Research Center for Low Temperature and Materials Sciences, Kyoto University
We developed a smart system which monitors purity and volume of helium gas at all gas recovery
stations over Yoshida campus. Live data from recovery stations are acquired via campus LAN andthose are shown on web so that all helium users can see them on their lab PC screens. This system
is useful in maintaining the recovery lines. We believe that it will work to reduce unnecessary lossesof helium gas and improve the recycle efficiency.
1. はじめに
ヘリウムガスの価格が高騰している. 主要な生産国であるアメリカの生産設備不調にともなう設備
改修のため, 供給が追いつかなくなっていることが原因であると伝えられている. また半導体や薄型テレビの製造に使うヘリウムガス量の大幅な増加も値上げに拍車をかけているそうだ. ヘリウムは天然ガスから分離して生産される. ヘリウムを採掘できるガス田は世界でもごく限られた場所にしかな
い. 日本は世界の全ヘリウム生産量のうち約 30 %を消費しているが, 日本国内にはヘリウムを生産しているガス田はなく, すべて輸入に頼っている. ヘリウムは軽いガスなので地上ではすぐに成層圏まで達してしまう. そのため空気中の含有量はごく微量である. ヘリウムは貴重なガスであり, その資源は限られている.
私たちが寒剤として液体ヘリウムを利用すると, 気化したヘリウムガスが発生する. ガスは回収されて低温物質科学研究センター (以下 LTM センター) 液化棟に送られる. 回収したガスは精製して再度液化することで繰り返し利用することができる. 回収できずに大気に放出してしまうと, それに見合う量のガスを購入して補充しなければならない. 2007 年 1 月から 12 月の期間に LTM センターが購入したヘリウムガスの価格はおよそ 1500 万円で, この金額は逃がしたガスの量に応じてユーザーの負担となる. 不必要な研究コスト増を防ぎ, 資源を有効に利用するためにできるだけ多くのガスを回収して再利用したいものである.
液化に利用できるのは空気等の混入が少ない高純度のガスだけである. 純度の低いガスが液化機に入ると, 液化効率が悪くなるばかりでなく, 液化機の心臓部であるタービンを損傷する大事故につながるおそれがあるからだ. そのため, 純度 90 %以下のガスは自動放出弁から大気に放出されるようになっている. 回収管にはきれいなガスだけを流すようにすべてのヘリウムユーザーにお願いしている.
もしも何らかの理由で回収ガスの純度や量が低下した場合は, すみやかに原因をつきとめて手当てすることが必要である. 私たちは機能的に回収ガスを管理し, できるだけ多くのガスを液化して再利用するため, ヘリウムガス回収系を常時監視するシステムを導入した. 2008 年 1 月の運用開始から本稿を執筆している時点まで 1ヶ月たらずであるが, 早くもこのシステムのおかげで回収系の不具合をいくつか発見し, 手当てできた. 予想通りの威力を発揮してくれている. 本稿では, この回収ヘリウム
ガス監視システムの概要と構築技術について解説する.

2. システムの概要
各研究室で液体ヘリウムから気化したガスは, まず最寄りのヘリウム回収室のガスバッグに集められる (図 1). ガスバッグがある程度膨らむと, 送出ポンプが起動して LTM 液化棟へとつながる学内回収管に送り出される. 京都大学吉田地区では総延長 3.5 km におよぶヘリウム回収管網が整備されており, 2007 年 4 月からは LTM 液化棟から 2 km 離れた病院地区からのヘリウム回収もスタートした[1]. 2008 年 2 月現在, 吉田地区で稼働中のヘリウム回収室は 10 か所あり, 建物の耐震改修工事が終わる 4 月からは大量のヘリウム消費が見込まれる理学 5 号館 (物理学教室) と LTM 実験棟が加わることになっている (図 2).

図 1: ヘリウム回収室の例. 研究室からのガスはいったん最寄りのヘリウム回収室のガスバッグに集められ, 送出ポンプで学内回収管を通って LTM センター液化棟に送られる. 送出ガス量を計測する
ガスメータ, ヘリウムガス純度計, さらに本システム導入で新たに設置したデータロガーが見える.
今回導入した「回収ヘリウムガス監視システム」は, (1) 稼働中のすべてのヘリウム回収室についてヘリウムガス純度, 送出ポンプ運転状態, 積算送出ガス量を常時同時に監視し, (2) インターネットを使って時間や場所の制限なく最新の監視データをだれでも入手できるようにすることを課題として開発した. (1) は回収系全体の状態をリアルタイムで集中監視することを実現し, (2) は LTM 寒剤ス
タッフだけでなく, 一般ユーザーも実験室にいながら最寄りのヘリウム回収室の状態を確認できるよ
うになる. 仮に純度の低いガスが LTM 液化棟に流れてきたとしよう. 従来は LTM 液化棟のヘリウ
ム純度計の警報音が鳴り, それを聞いた LTM 寒剤スタッフが電話やメールですべてのヘリウムユー
ザーに回収系の点検と報告をお願いしていた. 本システムの導入で, 寒剤スタッフとユーザーが純度低下が発生した情報を従来よりもずっと早く共有することができる. 純度の低いガスを送ったヘリウ
ム回収室がわかるので, そこに回収ガスを流しているユーザーだけに点検をしてもらえばよい. 原因の特定にかかる時間が飛躍的に短縮でき, 早い対応で無駄にするガス量の大幅な削減が期待できる.

図 2: 京都大学吉田地区のヘリウム回収管網 (赤線). LTM センター液化棟を中心に総延長 3.5 km の回収管が整備されている. 学内各所の回収端末の場所も表示してある.

3. システムの構築
本システムは大まかに以下の構成となっている. (1) 各ヘリウム回収室の状態を計測する. (2) 計測
データを LTM 液化棟のデータ収集 PC に送る. (3) データを Web サーバーに転送し, グラフを公開する. ここではシステム構築に用いた技術について解説する.
ヘリウム回収室のガス純度は, ジェック東理社のヘリウムガスモニターで計測し, アナログ出力電圧を記録する. 送出ポンプの運転状態は, ポンプの電源電圧をモニターする. 積算送出ガス量は, ガ
スメータが一定量回転するごとに出すパルス信号をカウントする. 計測および通信の役割を担う装置として採用したのが日置電機のデータロガー「遠隔計測監視システム 2300」である [2]. このデータ
ロガーには各種計測モジュールが用意されていて, 必要な計測モジュールを自由に組み合わせてカス
タマイズできる. 本システムでは, 純度計の出力電圧計測に計装モジュール, ガスメータのパルスカ
ウントにパルスモジュール, ポンプの状態監視に電力モジュール, データ収集 PC との通信に LAN モ
ジュールの 4 つのモジュールを用いた. これらをひとつのユニットとして各ヘリウム回収室に設置した. ガスメータのパルス出力は, そのままではチャタリングで思うようなカウントができない. パルス
中継器を使って対処する方法もあるが, 市販品は 1 台につき数万円のコストがかかる. この問題はコンデンサ 1 個で解決できた. パルス信号線と並列に適当なコンデンサを挿入すると, パルスモジュー
ルの入力抵抗との組み合わせで時定数 1 秒程度のローパスフィルタになる. これで正常なパルスのカウントができるようになった.
監視装置とデータ収集 PC の情報通信には, 全学的な情報ネットワークサービスである KUINS-IIIの VLAN を利用した [3]. この通信には, 専用の閉じた VLAN での運用がセキュリティやコストの面で好都合である. ただし, 吉田地区全体に広がっているヘリウム回収室の情報コンセントすべてをひ
とつの VLAN に入れることは KUINS の管理上難しいとのことだったので, エリアごとの VLAN と

LTM 液化棟の間で VLAN 間通信を行う設定にしてもらった. VLAN 間通信ですべての監視装置と

図 3: データ収集 PC のスクリーン上に表示された生データ. すべてのヘリウム回収室の状態が一目でわかる.
データ収集 PC が同じプライベートネットワーク上でつながっているかのように通信できる. こうして集められたデータは日置電機のソフトウエアを使ってデータ収集 PC のスクリーン上に一括して表示され, ファイルに保存される (図 3).
ここまでで吉田地区にあるすべてのヘリウム回収室の現在の状態を集中監視できるようになったわ
けだが, このままでは私たちが情報を入手するためには LTM 液化棟にあるデータ収集 PC のスクリー
ンを見ることが必要だ. そこで私たちはデータを web で公開して, ネットにつながったコンピュータ
さえあればいつでもだれでも情報入手できるようにした. これにより, システム運用の幅が大きく広がった.

LTM センター吉田地区の寒剤供給 web[4] から「回収端末モニター」を選択すると, 図 4 左のように前日午前 0 時から現在までのすべてのヘリウム回収室データがグラフで表示される. さらに, 詳し
く知りたい場所のグラフを選択すると 1 か所の詳細なグラフが表示される (図 4 右). ここでは縦軸 ·
横軸のスケールを自由に変えることもできる.

Web でのグラフ表示に用いた技術を簡単に紹介する. Windows のデータ収集 PC から Unix の web
サーバへのデータ転送は, Unix 側でファイルサーバの samba を起動し, Windows から realsync というソフトウエアを使ってファイルシステムの同期をさせている. 同期の周期は 2 分ごととした. Web
サーバは gnuplot でグラフの画像ファイル (png) を生成し, cgi で web に表示させる. 全体のグラフを表示する画面では, サーバの負荷を減らすため, 5 分以内に作成されたグラフが存在しないときにだけ新しい図を作るように工夫した. Unix 側での一連の処理は perl で記述した.

4. おわりに
本稿では新しく導入した「回収ヘリウムガス監視システム」について, システムの概要と構築技術の解説をした. Web で表示することで, 一般ユーザーも簡単に情報を入手できるようになった. 実験室で液体ヘリウムを使うときは, 最寄りの回収室の状態を見ながら自分のヘリウムはしっかりと LTM
液化棟まで届いているか気を配るようにお願いしたい.

図 4: LTM センター寒剤供給 web で表示されるヘリウム回収室の監視データ. (左): 全体を表示する
画面. 左から順にポンプの電源電圧, 積算送出ガス量, 純度 (右): 1 か所の詳細を表示する画面. 上から純度と積算送出ガス量. 画面スクロールでポンプ電源電圧も表示される.
将来的には LTM センターのデータベース [5] と連動させて, あるヘリウム回収室で純度低下がおこった場合に関係するユーザーだけを選びだして点検を促すメールを自動送信するなど, 異常時に素早い対応ができるような応用が考えられる. トランスファー前など大量のガスを流すことがあらかじ
めわかっている場合は, ヘリウム回収室のガスバッグがどの程度膨らんでいるかをチェックして, 必要
ならばユーザーが実験室の web 画面から遠隔操作で送出ポンプを起動させることができたらより安全だ. そのための技術を現在検討中である. 今回監視装置を設置したのはヘリウム回収室に限定したが, ヘリウムを使うすべての実験室に純度計を設置することができればさらに回収効率を高めることができるだろう.
冒頭で述べたように, ヘリウムは貴重な資源です. 効率よく使って良い成果をあげていただくことを期待しています.
本システムを導入するにあたり, 多くの方々にお世話になりました. LTM 寒剤供給スタッフ, 日置
電機, 日本電計, 京都大学学術情報メディアセンター, 理学部情報管理担当, 理学部施設掛, 吉田地区
各ヘリウム回収室管理担当者, 協力していただいたすべての方に感謝いたします.
参考文献[1] 大塚晃弘. 京都大学低温物質科学研究センター誌, 11, 59 (2007).
[2] http://www.hioki.co.jp/jp/product/2300/[3] http://www.kuins.kyoto-u.ac.jp/[4] http://www.ltm.kyoto-u.ac.jp/liqsupply/ 学外からこのサイトへのアクセスはパスワードで保護されている.

[5] 新井敏一, 松原明. 京都大学低温物質科学研究センター誌, 8, 58 (2006), 松原明. 京都大学低温物質科学研究センター誌, 11, 67 (2006),

$ 6 u…†‡ˆ‰Š‹Œ•8Ž-#T‘9‹Œ••‘’“”•Report on LTM Center Workshop 6–—˜™
ÁÂÃŠ…†‡ˆ‰Š‹Œ•8ŽYutaka Sasaki
Research Center for Low Temperature and Materials Sciences, Kyoto University
Annual meeting of the researchers and students who were affiliated with LTM center was held on February 13,
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É`Kö`K;bÄJÉÅ„-b‹µG÷à京都大学低温物質科学研究センター
第６回講演会・研究交流会
平成 20 年 2 月 13 日（水）京都大学百周年時計台記念館国際交流ホールⅡ
15:00-17:15

講演会「GMR か ら ス ピ ン ト ロ ニ ク ス へ」 国 際 高 等 研 究 所

新庄輝也「センターにおけるナノサイエンス研究の展望」 京都大学

寺嶋孝仁

「MEMS と 物 理：精 密 計 測 の フ ロ ン テ ィ ア」 神 戸 大 学

大道英二

17:25-19:30

研究交流会・懇親会

センター新研究棟完成予想図

京都大学低温物質科学研究センター〒606-8502

京都市左京区北白川追分町

075-753-4057

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[3] Rugar et al., Nature 430, 329 (2004).

0[4] Schwab et al., Nature 404, 974 (2000).

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P06

Superconductivity in Heavily Boron-Doped Silicon Carbide
M. Kriener,1 Z.A. Ren,2 J. Kato,2 T. Muranaka,2 J. Akimitsu,2 and Y. Maeno1
1
Department of Physics, Grad. School of Science, Kyoto University, Kyoto 606-8502, Japan2
Dep. of Physics and Mathematics, Aoyama-Gakuin University, Kanagawa 229-8558, Japan
E-mail!mkriener@scphys.kyoto.u.ac.jp

The discoveries of superconductivity in the heavily-boron doped semiconductors,
diamond (C:B) [1] in 2004 and silicon (Si:B) [2] in 2006, have renewed the interestin the physics of the superconducting state in doped semiconductors.
Recently, we discovered a new related diamond-structure-based
superconductor: heavily boron-doped SiC:B.
In contrast to C:B and Si:B, which are type-II
superconductors, the “mixed” system SiC:B unexpectedly
exhibits type-I superconductivity as indicated by a clear in-field
hysteresis and a rather low critical field Hc(0) ~115 Oe for Tc~1.5 K; Fig. 1 and [3].
We present the normal- and superconducting parameters
deduced from resistivity, AC susceptibility, Hall-effect, andspecific-heat measurements and discuss possible origins of thedifferent nature of the superconductivity in SiC:B compared to
C:B and Si:B.
FIG.1: AC susceptibility of SiC:B,[1] E.A. Ekimov et al., Nature 428, 542 (2004).
which exhibits an in-field hystersis[2] E. Bustarret et al., Nature 444, 465 (2006).
between cooling and subsequent[3] Z.A. Ren et al., J. Phys. Soc. Japan 76, 103710 (2007).
warming run.

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[1] R.Jin, Yu.Zadorozhny, Y.Liu, D.G.Schlom, Y.Mori, and Y.Maeno: Phys. Rev. B 59 (1998) 4433.
[2] C.Honerkamp and M.Sigrist: Prog. Theo. Phys. 100 (1998) 53.

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2008年2月13日(水)低温物質科学研究センター 研究交流会
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核整列固体 ３ He の超音波減衰機構
安井 健a , 佐々木 豊 a,b ,a 京都大学 理学研究科 物理学・宇宙物理学専攻 物理学第一分野
b 京都大学 低温物質科学研究センター
E-mail：yasui@scphys.kyoto-u.ac.jp
核整列固体 3He の超音波の減衰定数を測定し、周波数 ω に対して ω 2 の依存性、温度 T に対して T 3−5 のような依存性があることが分かった。磁
場依存性は基本的に見られなかったが、縦波横波のいずれについても周波数が 37MHz 近辺のときのみ、約 0.6T の磁場（Bstep）のところで減衰がステップ状に変化する結果が得られた。(図.1) これらの現象を理解するために、超音波の減衰がどのように起こるかの考察を行った。まず、1mK以下の超低温の状態では、フォノンの減衰過程としての多重フォノン散乱
は、熱励起されたフォノンが少ないので、ほとんど起こりえないと考えられる。次に、フォノンと熱励起されたマグノンとの散乱も、バルクの固体

図 1: ステップ状の減衰であると相互作用が弱いので起きにくいが、結晶中に線欠陥が存在する場
合は、磁気的な面欠陥が付随し、フォノンとともに振動しているので、マグノンが磁気的面欠陥に散乱されることで、フォノンとの多重散乱過程を起こして超音波減衰が起きると考えた。このとき、このの散乱過程に伴う運動量及びエネルギー保存則を考えれば、散乱された後、マグノンが 2 つできる４体過程が最も起こり得ると思われる。ここで、生成するマグノンが光学マグノンの場合であれば、分散曲線が磁場 B に依存しているので、(ωph +ω1 ) = 2 < γB (γ は 3 He の磁気回転比）であるとき、この４体過程が禁止される。

一方、音響マグノンの場合であれば、分散関係が磁場に依存した形でないので、そのような禁止領域は発生しない。従って、磁場掃引によって光学マグノン生成過程の禁止領域に入るときに減衰定数がステップ状に変化するものと考えた。

2008年2月13日(水)低温物質科学研究センター 研究交流会
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LTM Center Seminar!"#$%&'()*+, )-.,(/0 19 12 3 7 4)

Current Issues in the Chemistry andPhysics of Intermolecular Interactionsin Low Dimensional Systems
Professor Patrick Batail(University of Angers, CNRS, France)

56 7 2007 1 11 8 21 5 (9:5) 13:30November 21, Wednesday, 2007;<7 =&> 2 ?@ 129 ?A (3 2 BCA)
Room 129, Faculty of Science Bldg. No. 2!

DE7This seminar is meant todiscuss current issues where
the chemistry and physics ofintermolecularinteractions,notably hydrogen and halogen bonds, act inunison in low dimensional, strongly correlated
systems. It is intended to focus on a set of newparadigms and concepts, and primarily related
to the chemistry of band filling in molecular
metals, with the purpose of looking ahead andunderline opportunities like in using functional
molecules for manipulating the Fermi surface
topology in molecular metals; or for the
manipulation of the chemical activity at theorganic-organic interface in radical cation saltsof polycarboxylates.
FGH IJ KL (MN 4036)
Contact7Hideki Yamochi (ext. 4036)

!"#$%&'()*+, )-., OPQ(/0 19 12 3 8 4)Noble Metal Nanostructure-Embedded Polymer Films
Professor T. P. Radhakrishnan(School of Chemistry, University of Hyderabad, India)
56 7 2007 1 12 8 13 5 (R:5) 14:00;<7 =&> 6 ?@ 571 ?A (=&>S?@TU)
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FGH IJ KL(M4036)

LTM Center Seminar!"#$%&'()*+, )-.,(/0 19 12 3 9 4)

Fluorine dynamics in BaF2 superionic
conductors investigated by NMR
Dr. Patryk Gumann(Darmstadt University of Technology, German;
ISSP, Univ. of Tokyo, Japan)

56 7 2008 1 3 8 28 5 (•:) 11:00March 28, Friday;<7 =&> 6 ?@ 204 ?A(=&> 6 ?@dU)
Room 204 Faculty of Science Bldg. No.6!

DE7How are diffusing ions associated with material structures within a superionic
conductor? What types of interaction are diffusing ions undergoing with the host ionssurrounding them? How important is the correlation among diffusing ions in their motion?
The answer to some of these questions will be give in this talk.
Superionic conductors are highly promising functional materials. As a stepping stone in thedevelopment of new superionic conductors that can be utilized as functional materials efforts
to reevaluate solid-interior diffusion and conduction phenomena of ions and molecules in asuperionic conductor on the basis of basic physical properties, and to clarify mechanism
governing these phenomena from a microscopic standpoint are important.
In this talk, the key methods that have been used to deduce structural and dynamical
informations in BaF2-type superionic conductors are described, and the important resultssummarized. Apart form the scientific results also short introduction to the home build, stateof the art NMR spectrometers: fast field cycling, line shape and static field gradient will begiven. Most of the experimental work has been performed in the temperature range from 77K
to 1300K using home-made high temperature probe-heads and cryostat.

FGH efRg (3755)
Contact7Yutaka Sasaki (ext. 3755)

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