SN0608G4

TENTATIVE

SiC Schottky Barrier DiodeFeatures●●●●Silicon Carbide Schottky Barrier Diode
Low VfLow IR
High-Recovery Speed

Applications●●●●Switch mode power supplies
Power Factor Correction
Secondary Side Rectification
PV Power Conditioners

Maximim Ratings (Ta=25℃)
Parameter
Repetitive peak reverse voltage
Reverse voltage (DC)Forward current (DC)Surge no repetitive forward current
Junction temperature
Storage temperature

Symbol
V RM
VRIF
IFSM
TjTstgConditions

10ms Sinusoidal

Limit
650
650
865
175-55 to +175

UnitVVA
A℃℃

Electrical Characteristics (Ta=25℃)
Parameter
DC blocking voltage

Symbol
VDC

Forward voltage

VF

Reverse current

IR

Total capacitance
Total capacitive charge
Switching time

CQC
tc

2024/6/17
PHENITEC SEMICONDUCTOR Corp.

Condition
IR =40uA
IF=8A, Ta=25℃
IF=8A, Ta=150℃
IF=8A, Ta=175℃
V R=650V, Ta=25℃
VR=650V, Ta=150℃
VR=650V, Ta=175℃
V R=1V, f=1MHz
V R=400V, di/dt=350A/us
V R=400V, di/dt=350A/us

Min.
650-

Documents for Website

Typ.
1.33
1.60
1.70
0.3
37272
2115

Max.
1.70
40-UnitV
V
V
V
uA
uA
uA
pF
nC
nS

1/3

SN0608G4

TENTATIVE

SiC Schottky Barrier Diode
Electrical Characteristics curves

VF-IF (pulsed)

VF-IF (pulsed)
100

14

Ta=25℃
Ta=50℃

1210

Ta=100℃
Ta=125℃

8IF(A)

IF(A)10

Ta=75℃

Ta=150℃
Ta=175℃

6

Ta=25℃

1

Ta=50℃
Ta=75℃

0.1

Ta=100℃
Ta=125℃

40.01

Ta=150℃

2

Ta=175℃

0
0.0

0.5

1.0

1.5

2.0

0.001

2.5

0.0

0.5

1.0

VF(V)

2.0

2.5

VF(V)

VR-IR (pulsed)

1000

1.5

C-VR

1000

Ta=25℃
Ta=50℃

100

Ta=75℃Ta=100℃

100

Ta=125℃

C(pF)

IR(uA)

10

Ta=150℃

1

Ta=175℃

0.1

Ta=25℃

10f=1MHz

0.01
0.001

10200

400

600

0.1

VR(V)

2024/6/17
PHENITEC SEMICONDUCTOR Corp.

110100VR(V)Documents for Website

2/3

TENTATIVE

SN0608G4SiC Schottky Barrier DiodeNOTE1 ) This document is for reference only.
2 ) Please request for the specification sheet before use.
3 ) Since the products are in wafer form, the values in this document are for reference only.
4 ) Although we strive to improve the quality of our products, they may malfunction or fail. When using thisproduct, please implement a safety design suitable for the system within your responsibility.
5 ) Although this document has been prepared with great care, we assume no responsibility for any
damages incurred due to errors in the provoded information.
6 ) If the operating environment (e.g., high temperature, high voltage, high current) is severe, the reverse
current may become excessively large and the device may be destroyed due to the increased reverse
7 ) The absolute maximum ratings must not be exceeded even momentarily. Do not exceed the absolutemaximum ratings for any of the multiple ratings.
8 ) In particular, when evaluating or using the product in a resin-encapsulated package or in a sealed
environment, be sure to measure the temperature and confirm that the maximum junction temperaturedesignated as the maximum ratings is not exceeded.
9 ) The products described in this document are intended for use in general electronic equipment (e.g., AV
equipment, OA equipment, home appliances).
10 ) This product is not intended for use in products whose manufacture, use, or sale is prohibited bydomestic or foreign laws or regulations.
11 ) Do not use the information contained in this document or this product for the purpose of developing
destructive weapons for military use.
12 ) When exporting this product, please comply with applicable export laws and regulations and follow thenecessary procedures.
13 ) The information in this document is subject to change without notice.
14 ) The process flow and process conditions of this product are subject to change without notice.

2024/6/17
PHENITEC SEMICONDUCTOR Corp.

Documents for Website

3/3