SN0610G3
SiC Schottky Barrier DiodeFeatures● Silicon Carbide Schottky Barrier Diode● Small die size
● Low IR
● High-Recovery SpeedApplications● Switch mode power supplies● Power Factor Correction● Secondary Side Rectification● PV Power Conditioners

Maximim Ratings (Ta=25℃)
Parameter
Repetitive peak reverse voltage
Reverse voltage (DC)Forward current (DC)Surge no repetitive forward current
Junction temperature
Storage temperature

SymbolVRM
VRIFIFSM
TjTstgConditions

10ms Sinusoidal

Limit
650
650
1060
175-55 to +175

UnitVVA
A℃℃

Electrical Characteristics (Ta=25℃)
Parameter
DC blocking voltage

Symbol
VDC

Forward voltage

VF

Reverse current

IR

Total capacitance
Total capacitive charge
Switching time

CQC
tc

2023/3/30
PHENITEC SEMICONDUCTOR Corp.

Condition
IR=50uA
IF=10A, Ta=25℃
IF=10A, Ta=150℃
IF=10A, Ta=175℃
VR=650V, Ta=25℃
VR=650V, Ta=150℃
VR=650V, Ta=175℃
VR=1V, f=1MHz
VR=400V, di/dt=350A/us
VR=400V, di/dt=350A/us

Min.
650
-

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Typ.
1.49
1.93
2.09
0.1
1.5
3.5
250
2415

Max.
1.91
50-Unit
VVVVuAuA
uA
pF
nC
nS

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SN0610G3SiC Schottky Barrier Diode
Electrical Characteristics curves

VF-IF (pulsed)

VF-IF (pulsed)
100

14

Ta=25℃

12

Ta=50℃10

Ta=100℃

8IF(A)

IF(A)10

Ta=75℃

Ta=125℃
Ta=150℃

6

Ta=25℃

1

Ta=50℃
Ta=75℃

0.1

Ta=100℃

Ta=175℃
4

Ta=125℃

0.01

Ta=150℃

2

Ta=175℃
00.0

0.5

1.0

1.5

2.0

0.001
0.00

2.5

1.00

VF(V)

VR-IR (pulsed)

1000

2.00

3.00

10100

VF(V)

C-VR

1000

Ta=25℃
Ta=50℃

100

Ta=75℃
Ta=100℃

100

Ta=125℃

C(pF)

IR(uA)

10

Ta=150℃

1

Ta=175℃
0.1

Ta=25℃

10f=1MHz

0.01
0.001

10200

400

600

0.1

VR(V)

2023/3/30
PHENITEC SEMICONDUCTOR Corp.

1VR(V)

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SN0610G3SiC Schottky Barrier DiodeNOTE

1 ) This document is for reference only.
2 ) Please request for the specification sheet before use.
3 ) Since the products are in wafer form, the values in this document are for reference only.
4 ) Although we strive to improve the quality of our products, they may malfunction or fail. When using
this product, please implement a safety design suitable for the system within your responsibility.
5 ) Although this document has been prepared with great care, we assume no responsibility for any
damages incurred due to errors in the provoded information.
6 ) If the operating environment (e.g., high temperature, high voltage, high current) is severe, the reverse
current may become excessively large and the device may be destroyed due to the increased reverse
7 ) The absolute maximum ratings must not be exceeded even momentarily. Do not exceed the absolutemaximum ratings for any of the multiple ratings.
8 ) In particular, when evaluating or using the product in a resin-encapsulated package or in a sealedenvironment, be sure to measure the temperature and confirm that the maximum junction temperaturedesignated as the maximum ratings is not exceeded.
9 ) The products described in this document are intended for use in general electronic equipment (e.g., AVequipment, OA equipment, home appliances).
10 ) This product is not intended for use in products whose manufacture, use, or sale is prohibited bydomestic or foreign laws or regulations.
11 ) Do not use the information contained in this document or this product for the purpose of developing
destructive weapons for military use.
12 ) When exporting this product, please comply with applicable export laws and regulations and follow thenecessary procedures.
13 ) The information in this document is subject to change without notice.
14 ) The process flow and process conditions of this product are subject to change without notice.

2023/3/30
PHENITEC SEMICONDUCTOR Corp.

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