SN0620G3
SiC Schottky Barrier DiodeFeatures●●●●

Silicon Carbide Schottky Barrier Diode
Small die size
Low IR
High-Recovery SpeedApplications●●●●Switch mode power supplies
Power Factor Correction
Secondary Side Rectification
PV Power Conditioners

Maximim Ratings (Ta=25℃)(in case of TO-220 PKG)

Parameter
Repetitive peak reverse voltage
Reverse voltage (DC)Forward current (DC)Surge no repetitive forward current
Junction temperature
Storage temperature

SymbolV RM
VRIFIFSM
TjTstgElectrical Characteristics (Ta=25℃)(in case of TO-220 PKG)

Parameter
DC blocking voltage

Symbol
VDC

Forward voltage

VFReverse current

IRTotal capacitance
Total capacitive charge
Switching time

CQCtc

2024/3/21
PHENITEC SEMICONDUCTOR Corp.

Conditions

10ms Sinusoidal

Condition
IR=100uA
IF=20A, Ta=25℃
IF=20A, Ta=150℃
IF=20A, Ta=175℃
V R=650V, Ta=25℃
VR=650V, Ta=150℃
VR=650V, Ta=175℃
V R=1V, f=1MHz
V R=400V, di/dt=350A/us
V R=400V, di/dt=350A/us

Min.
650
-Documents for Website

Limit
650
650
20100
175-55 to +175

Typ.
1.47
1.91
2.06
0.4
51151447
25Max.
1.91
400-Unit
VV
A
A℃
℃

Unit
VV
V
VuA
uA
uA
pF
nCnS

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SN0620G3SiC Schottky Barrier Diode
Electrical Characteristics curves(in case of TO-220 PKG)

VF-IF (pulsed)

VF-IF (pulsed)

30

100
Ta=25℃

25

Ta=50℃

10

Ta=75℃
Ta=100℃

IF(A)

IF(A)

20

Ta=125℃
15

Ta=150℃
Ta=175℃

1

Ta=25℃
Ta=50℃
Ta=75℃

0.1

10

Ta=100℃
Ta=125℃

0.01

5Ta=150℃
Ta=175℃

00.0

0.5

1.0

1.5

2.00.001

2.5

0.0

0.5

1.0

VF(V)

11000

C(pF)

IR(uA)

102.5C-VR

10000

Ta=25℃
Ta=50℃
Ta=75℃
Ta=100℃
Ta=125℃
Ta=150℃
Ta=175℃

100

2.0

VF(V)

VR-IR (pulsed)

1000

1.5

0.1

100
Ta=25℃

0.01

f=1MHz0.001

100200

400

600

0.1

VR(V)

2024/3/21
PHENITEC SEMICONDUCTOR Corp.

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SN0620G3SiC Schottky Barrier DiodeNOTE1 ) This document is for reference only.
2 ) Please request for the specification sheet before use.
3 ) Since the products are in wafer form, the values in this document are for reference only.
4 ) Although we strive to improve the quality of our products, they may malfunction or fail. When using thisproduct, please implement a safety design suitable for the system within your responsibility.
5 ) Although this document has been prepared with great care, we assume no responsibility for any
damages incurred due to errors in the provoded information.
6 ) If the operating environment (e.g., high temperature, high voltage, high current) is severe, the reverse
current may become excessively large and the device may be destroyed due to the increased reverse
7 ) The absolute maximum ratings must not be exceeded even momentarily. Do not exceed the absolutemaximum ratings for any of the multiple ratings.
8 ) In particular, when evaluating or using the product in a resin-encapsulated package or in a sealed
environment, be sure to measure the temperature and confirm that the maximum junction temperaturedesignated as the maximum ratings is not exceeded.
9 ) The products described in this document are intended for use in general electronic equipment (e.g., AVequipment, OA equipment, home appliances).
10 ) This product is not intended for use in products whose manufacture, use, or sale is prohibited bydomestic or foreign laws or regulations.
11 ) Do not use the information contained in this document or this product for the purpose of developing
destructive weapons for military use.
12 ) When exporting this product, please comply with applicable export laws and regulations and follow thenecessary procedures.
13 ) The information in this document is subject to change without notice.
14 ) The process flow and process conditions of this product are subject to change without notice.

2024/3/21
PHENITEC SEMICONDUCTOR Corp.

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