SCT3040KL
DatasheetN-channel SiC power MOSFET
lOutline

VDSS

1200V

RDS(on) (Typ.)

40mΩ

*155A

IDPD

TO-247N

262W(1)(2)(3)lInner circuit
lFeatures(1) Gate(2) Drain(3) Source

1) Low on-resistance2) Fast switching speed*Body Diode3) Fast reverse recovery
4) Easy to parallel5) Simple to drive
6) Pb-free lead plating ; RoHS compliant

Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead tomalfunction.
lPackaging specifications

lApplication

Packing・Solar inverters

Reel size (mm)-Tape width (mm)-Basic ordering unit (pcs)

30・Induction heating

Taping code

C11・Motor drives

Marking・DC/DC converters

TubeType・Switch mode power supplies

SCT3040KL

lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified)Parameter

Symbol

Value

Unit

VDSS

1200

V

Tc = 25°C

ID *155

A

Tc = 100°C

ID *139

A137

A-4 to +22

V

Drain - Source Voltage
Continuous Drain current
Pulsed Drain current (Tc = 25°C)

ID,pulse

Gate - Source voltage (DC)VGSS

*2*3Gate - Source surge voltage (tsurge < 300nsec)

VGSS_surge-4 to +26

V

Recommended drive voltage

VGS_op*40 / +18

V

Virtual Junction temperature

Tvj

175°C

Range of storage temperature

Tstg-55 to +175°C

www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001

1/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristics (Tvj = 25°C unless otherwise specified)
ValuesParameter

SymbolConditions

Unit
Min.

Typ.

Max.

V(BR)DSS Tvj = 25°C

1200--Tvj = -55°C

1200--Tvj = 25°C-110Tvj = 150°C-2-

VGS = 0V, ID = 1mA
Drain - Source breakdown
voltage

VVGS = 0V, VDS =1200V
Zero Gate voltage
Drain current

IDSSμA

Gate - Source leakage current

IGSS+VGS = +22V , VDS = 0V--100nA

Gate - Source leakage current

IGSS-

VGS = -4V, VDS = 0V---100nA

Gate threshold voltage

VGS (th) VDS = 10V, ID = 10mA

2.7-

5.6VRDS(on) *5 Tvj = 25°C

-4052mΩTvj = 150°C-68-

f = 1MHz, open drain-7-

VGS = 18V, ID = 20A
Static Drain - Sourceon - state resistance

RG

Gate input resistanceΩlThermal resistance
ValuesParameter

SymbolRthJC

Thermal resistance, junction - case

Unit
Min.

Typ.

Max.

-0.44

0.57

K/W

lTypical Transient Thermal Characteristics
Symbol

Value

Rth1

2.56E-02

Rth2

1.95E-01

Rth3

2.20E-01

Unit

K/W

TjPD

Value

Cth1

1.39E-03

Cth2

1.00E-02

Cth3

3.57E-02

Rth,n

Rth1

Cth1

Symbol

Cth2

Unit

Ws/K

Tc

Cth,nTawww.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

2/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristics (Tvj = 25°C unless otherwise specified)
ValuesParameter

SymbolConditions

Unit
Min.

Typ.

Max.

Transconductancegfs *5

VDS = 10V, ID = 20A

-

8.3

-

Input capacitanceCiss

VGS = 0V

-

1337

-

Output capacitanceCoss

VDS = 800V

-76-

Reverse transfer capacitance

Crssf = 1MHz-

27-

Effective output capacitance,energy relatedCo(er)

-

122-

Total Gate charge

Qg *5-

107--17--56--21--39-

VGS = 0V
VDS = 0V to 600V
VDS = 600V

SpFpF

ID = 20A*5Gate - Source charge

Qgs

Gate - Drain charge

Qgd *5

Turn - on delay timetd(on) *5

VGS = 18V
See Fig. 1-1.
VDS = 400VnC

ID = 18A
Rise time
Turn - off delay timetr*5td(off)

VGS = 0V/+18V*5

RG = 0Ωns-49--24--283-

RL = 22Ω
Fall time

tf *5

See Fig. 1-1, 1-2.
VDS = 600V

Turn - on switching loss

Eon *5

VGS=0V/18V, ID = 20A
RG = 0Ω, L = 250μH

Turn - off switching loss

www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

Eoff *5

Eon includes diodereverse recovery
Lσ = 50nH, Cσ = 200pF
See Fig. 2-1, 2-2.

3/15μJ-118-

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL

lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified)
ValuesParameter

SymbolBody diode continuous,
forward current

Conditions

IS *1

Unit
Min.

Typ.

Max.

--55

A--137A

Tc = 25°C

Body diode direct current,pulsed

ISM

Forward voltage

VSD *5 VGS = 0V, IS = 20A-

3.2-

VReverse recovery time

trr *5IF = 20A-

25-

nsdi/dt = 1100A/μs-115-nC

Lσ = 50nH, Cσ = 200pF
See Fig. 3-1, 3-2.

-

9-

A

*2VR = 600V
*5

Reverse recovery charge

Qrr

Peak reverse recovery current

Irrm *5*1 Limited by maximum Tvj and for Max. RthJC.
*2 PW  10μs, Duty cycle  1%
*3 Example of acceptable VGS waveform

Please note especially when using driver source that VGSS_surge must be in the range ofabsolute maximum rating.
*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.
*5 Pulsed

www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

4/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

1000

300
250

Drain Current : ID [A]Power Dissipation : PD [W]

Operation in this area is limited by R DS(on)200150100100PW = 1μs*10PW = 10μs*
PW = 100μs
PW = 1ms
PW = 10ms

150

Tc = 25ºC
Single Pulse*Calculation(PW10μs)

00.125751251750.1

Case Temperature : TC [°C]1101001000 10000

Drain - Source Voltage : VDS [V]Fig.3 Typical Transient ThermalResistance vs. Pulse Width

Transient Thermal Impedance :ZthJC [K/W]

10.1

0.01

0.001
Tc = 25ºC
Single Pulse

0.0001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1Pulse Width : PW [s]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

5/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I)Fig.5 Typical Output Characteristics(II)255020V

18V

2012V

Drain Current : ID [A]40

Drain Current : ID [A]

20V

18V
16V
14V

Tvj = 25ºC
Pulsed

30

20

10V

16V
14V

15

12V

10V

10Tvj = 25ºC
Pulsed510

VGS= 8V
VGS= 8V

0002468010

Drain - Source Voltage : VDS [V]12345

Drain - Source Voltage : VDS [V]Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics
0Tvj = 25ºCPulsed

Drain Current : ID [A]-10

VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V

-20-30-40-50-10-8-6-4-20

Drain - Source Voltage : VDS [V]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

6/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristic curves

Fig.7 Tvj = 150ºC Typical Output
Characteristics(I)Fig.8 Tvj = 150ºC Typical Output
Characteristics(II)502520V

20V

18V

Drain Current : ID [A]4010V

302010V
12V

20

Drain Current : ID [A]

16V
14V
12V

VGS= 8V

1014V
16V

1518V

VGS= 8V

105Tvj = 150ºCPulsed

Tvj = 150ºC
Pulsed0002468100

Drain - Source Voltage : VDS [V]2345

Drain - Source Voltage : VDS [V]Fig.9 Tvj = 150ºC 3rd Quadrant
Characteristics

Fig.10 Body Diode Forward Voltage
vs. Gate - Source Voltage
6Body Diode Forward Voltage : VSD [V]0Tvj = 150ºCPulsed-10

Drain Current : ID [A]

1VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V-20-30-40-50

ID=20A

5432Tvj= 150ºC

1Tvj= 25ºC

0-10-8-6-4-20-4

Drain - Source Voltage : VDS [V]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

048121620Gate - Source Voltage : VGS [V]7/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristic curves

Fig.11 Typical Transfer Characteristics (I)Fig.12 Typical Transfer Characteristics (II)50100VDS = 10VPulsed

VDS = 10VPulsed

Drain Current : ID [A]Drain Current : ID [A]4010Tvj= 150ºC
Tvj= 75ºC
Tvj= 25ºC
Tvj= -25ºC

10.1

30
Tvj= 150ºC
Tvj= 75ºC
Tvj= 25ºC
Tvj= -25ºC

20

100.01002468 10 12 14 16 18 200

Gate - Source Voltage : VGS [V]468 10 12 14 16 18 20

Gate - Source Voltage : VGS [V]Fig.13 Gate Threshold Voltage
vs. Junction Temperature

Fig.14 Transconductance vs. Drain Current

610VDS = 10V
ID = 10mA

5VDS = 10VPulsed

Transconductance : gfs [S]Gate Threshold Voltage : V GS(th) [V]2432101
Tvj = 150ºC
Tvj = 75ºC
Tvj = 25ºC
Tvj = -25ºC

0.1-50050100

150

2000.1Junction Temperature : Tvj [ºC]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

110Drain Current : ID [A]

8/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL

Fig.15 Static Drain - Source On - StateResistance vs. Gate - Source Voltage

Fig.16 Static Drain - Source On - StateResistance vs. Junction Temperature

0.16

0.10
Tvj = 25ºC
PulsedID= 37A

0.14

Static Drain - Source On-State
Resistance : RDS(on) [Ω]Static Drain - Source On-StateResistance : RDS(on) [Ω]lElectrical characteristic curves

0.12
0.10
0.08
ID= 20A

0.06

0.04

ID= -20A

0.02

VGS = 18V
Pulsed0.08

ID= 37A

0.06
ID= 20A

0.04
ID= -20A

0.02

0.00

0.00
810121416

1820-50

22Gate - Source Voltage : VGS [V]050100150200

Junction Temperature : Tvj [ºC]

0.1

1.04

Normalized Drain - Source
Breakdown Voltage

Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Junction Temperature

Static Drain - Source On-StateResistance : RDS(on) [Ω]Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current

Tvj = 150ºC
Tvj = 125ºC
Tvj = 75ºC
Tvj = 25ºC
Tvj = -25ºC
VGS = 18V
Pulsed

0.01

1.03

1.02
1.01
1.00
0.99

0.98
110100-50

Drain Current : ID [A]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

050

100150200Junction Temperature : Tvj [ºC]

9/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristic curves

Fig.19 Typical Capacitancevs. Drain - Source Voltage

Fig.20 Coss Stored Energy
4010000

Tvj = 25ºC

Coss Stored Energy : EOSS [µJ]Capacitance : C [pF]

Ciss

1000
Coss

100

Crss

10Tvj = 25ºC
f = 1MHz
VGS = 0V30

2010010.1

1101001000

Drain - Source Voltage : VDS [V]0200

400600800

Drain - Source Voltage : VDS [V]Fig.21 Dynamic Input Characteristics*Gate Charge Waveform

Gate - Source Voltage : VGS [V]20Tvj = 25ºC
VDD = 600V
ID = 20APulsed

151050020406080100120

Total Gate Charge : Qg [nC]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

10/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lElectrical characteristic curves

Fig.19 Typical Switching Timevs. Drain Current

Fig.20 Typical Switching Lossvs. Drain - Source Voltage

10000

500

tf

100td(off)trtd(on)10Tvj = 25°C
ID = 20A
VGS= +18V/0V
RG = 0Ω450

Switching Energy : E [µJ]Switching Time : t [ns]1000

Tvj = 25°C
VDD= 400V
VGS= +18V/0V
RG = 0Ω400

L=350

250μH

Eon

300

250
200
150
Eoff100

50010.1

110200100

Drain Current : ID [A]

600

800

Fig.22 Typical Switching Lossvs. External Gate Resistance

1800

1800
Tvj = 25°C
VDD= 600V
VGS= +18V/0V
RG = 0Ω
L=250μH

1200
1000
Eon

800

Tvj = 25°C
ID = 20A
VDD= 600V
VGS= +18V/0V

1600

Switching Energy : E [µJ]

1400

600

400
Eoff200

1000

Drain - Source Voltage : VDS [V]Fig.21 Typical Switching Lossvs. Drain Current

1600

Switching Energy : E [µJ]

400

1400

L=250μH

1200

1000
800
Eon600Eoff

40020000010203040500601015202530

External Gate Resistance : RG [Ω]Drain Current : ID [A]www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

511/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge and Switching Time Measurement Circuit

Fig.1-2 Waveforms for Switching Time

Fig.2-1 Switching Energy Measurement Circuit

Fig.2-2 Waveforms for Switching Energy Loss
Eon = ‫ ׬‬ID ∙ VDS dt

VDS

Eoff = ‫ ׬‬ID ∙ VDS dt
VsurgeIrr

ID

Fig.3-1 Reverse Recovery Time Measurement Circuit

www.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

Fig.3-2 Reverse Recovery Waveform

12/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lPackage Dimensions

Unit: mmwww.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

13/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL

Unit: mmwww.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

14/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

Datasheet

SCT3040KL
lDie Bonding Layout: Die position

・Front view of the packaging.
・Dimensions are design values.
・If the heat sink is to be installed, it should be in contact with the die bonding point.

Unit: mmwww.rohm.com©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001

15/15

TSQ50211-SCT3040KL
13.Nov.2022 - Rev.006

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
11) Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact aROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws andregulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System
http://www.rohm.com/contact/

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

R1107 S

Datasheet
General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any priornotice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM salesrepresentative.

3.

The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of orconcerning such information.

Notice – WE

© 2015 ROHM Co., Ltd. All rights reserved.

Rev.001