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C5917

Silicon NPN transistor epitaxial type
C5917

[ Applications ]High voltage, High current[ Feature ]High voltage VCEO= 200V
High current gain charactristic
Low collector-emitter saturation voltage VCE(sat)= 0.18V(Max.) at IC/IB= 1A/50mA[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO
300
VCEO
200
VEBO
7IC2Tj150
Tstg-55 to 150

UnitVVVACC[ Electrical characteristics (Ta=25C) ]Characteristic
SymbolCollector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector cut-off current
ICES
DC current gain 1
hFE 1
DC current gain 2
hFE 2
DC current gain 3
hFE 3
DC current gain 4
hFE 4
Collector-emitter saturation voltage 1

VCE(sat) 1

Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3

VCE(sat) 2

Base-emitter saturation voltage
Base-emitter on voltageTransition frequency
Collector output capacitance

VBE(sat)VBE(on)fT
Cob

VCE(sat) 3

Min.
300
200719018050550.5-Typ.
90
16Max.
5050504500.110.40.18
0.85
0.73
-Unit
V
V
VnAnAnA
V
V
V
V
V
MHz
pF

Conditions
IC= 50uA
IC= 1mA
IE= 50uA
VCB= 300V
VEB= 6V
VCES= 300V
VCE= 5V, IC= 100mA
VCE= 5V, IC= 500mA
VCE= 1V, IC= 700mA
VCE= 5V, IC= 1A
IC= 500mA, IB= 50mA
IC= 700mA, IB= 14mA
IC= 1A, IB= 50mA
IC= 500mA, IB= 50mAVCE= 5V, IC= 5mA
VCE= 10V, IE= -100mA
VCB= 10V, f = 1MHz, IE= 0A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. C5917-20070213- 1/2 -0070213

C5917

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Fig.1 VBE(on) - IC
at VCE= 5V, Ta= 25C

Fig.2 hFE - IC
at VCE= 1V, Ta= 25C

10Fig.3 hFE - IC
at VCE= 5V, Ta= 25C
1000

0.10.010.60.8

100100.001

0.001
0.4

DC current gain : hFE

1DC current gain : hFE

Collector current : IC (A)

1000

10.01
0.1
110Collector current : IC (A)100100.001

0.01
0.1
110Collector current : IC (A)Base-emitter on voltage: VBE(on) (V)

Fig.5 VCE(sat) - IC
at IC/IB= 20, Ta= 25C

Fig.4 VCE(sat) - IC
at IC/IB= 50, Ta= 25C

0.1

0.01

0.1

1

10

0.1

0.01
0.001

0.01

0.1

1100.01
0.001

0.01

0.1

110Collector current : IC (A)Collector current : IC (A)Collector current : IC (A)Fig.7 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.8 fT - IE
at VCE= 10V, Ta= 25C

Fig.9 Cob - VCB
at f= 1MHz, Ta= 25C

Transition frequency: fT (MHz)

Base-emitter saturation
voltage : VBE(sat) (V)

1000

100

10.01
0.1
110
Collector current : IC (A)100

10100.1
0.001

0.1

Collector output
capacitance : Cob (pF)

0.010.001

Collector-emitter saturation
voltage : VCE(sat) (V)1101

1Collector-emitter saturation
voltage : VCE(sat) (V)Collector-emitter saturation
voltage : VCE(sat) (V)10

Fig.6 VCE(sat) - IC
at IC/IB= 10, Ta= 25C

10.0010.01
0.1
1
Emitter current : -IE (A)

10.1

1
10
100
Collector-base voltage : VCB (V)

Fig.10 Cib - VEB
at f= 1MHz, Ta= 25C

Collector input
capacitance : Cib (pF)

1000

100
0.1

110
Emitter-base voltage : VEB (V)

PHENITEC SEMICONDUCTOR Corp.

No. C5917-20070213- 2/2 -