PMBT3946YPN-Q

40 V, 200 mA NPN/PNP general-purpose double transistor
23 November 2023

Product data sheet

1. General description
NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted
Device (SMD) plastic package.
NPN/NPN complement: PMBT3904YS-Q
PNP/PNP complement: PMBT3906YS-Q

2. Features and benefits•••

General-purpose double transistor
Board-space reduction
Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications•

General-purpose switching and amplification

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

-

-

40

V

-

-

200

mA

100

180

300

Per transistor; for the PNP transistor with negative polarity
VCEO

collector-emitter
voltageIC

collector current

open baseTR1 (NPN)hFE

DC current gain

VCE = 1 V; IC = 10 mA; Tamb = 25 °C

PMBT3946YPN-Q

Nexperia

40 V, 200 mA NPN/PNP general-purpose double transistor

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription
1

E1

emitter TR1

2

B1

base TR1

3

C2

collector TR2

4

E2

emitter TR2

5

B2

base TR2

6

C1

collector TR1

Simplified outline
65Graphic symbol
4

C1

B2

TR2

TR1
1

2

3

TSSOP6 (SOT363)

E1

E2

B1

C2
sym019

6. Ordering information
Table 3. Ordering information
Type number
Package
PMBT3946YPN-Q

Name

Description

VersionTSSOP6plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363
2.1 mm x 1.25 mm x 0.95 mm body

7. Marking
Table 4. Marking codes
Type number

Marking code[1]PMBT3946YPN-Q

BB%

[1]

% = placeholder for manufacturing site code

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40 V, 200 mA NPN/PNP general-purpose double transistor

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

60

V

collector-base voltage

open emitter

-

-40

V

TR1 (NPN)
VCBO
TR2 (PNP)
VCBOPer transistor; for the PNP transistor with negative polarity
VCEO

collector-emitter voltage

open base

-

40

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

200

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

230

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

350

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Per device[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
006aab113

400
Ptot
(mW)
300

200

100

0
- 75

- 25

25

75

125
175
Tamb (°C)

FR4 PCB, standard footprint
Fig. 1.

Per device: Power derating curve

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40 V, 200 mA NPN/PNP general-purpose double transistor

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

-

-

543

K/W

-

-

290

K/W

-

-

357

K/W

Per transistor
Rth(j-a)thermal resistance from in free air
junction to ambient

Rth(j-sp)

thermal resistance fromjunction to solder point[1]

Per device
Rth(j-a)[1]

thermal resistance fromjunction to ambient[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab114103
δ=1Zth(j-a)
(K/W)

0.75
0.5
0.33

102

0.2
0.1
0.05

10

0.02
0.01
0

1
10- 5

10- 4

10- 3

10- 2

10- 1

1

10

102

tp (s)

103

FR4 PCB, standard footprint
Fig. 2.

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values

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40 V, 200 mA NPN/PNP general-purpose double transistor

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

TR1 (NPN)
ICBO

collector-base cut-off
current

VCB = 30 V; IE = 0 A; Tamb = 25 °C

-

-

50

nA

IEBO

emitter-base cut-off
current

VEB = 6 V; IC = 0 A; Tamb = 25 °C

-

-

50

nA

hFE

DC current gain

VCE = 1 V; IC = 0.1 mA; Tamb = 25 °C

60

180

-

VCE = 1 V; IC = 1 mA; Tamb = 25 °C

80

180

-

VCE = 1 V; IC = 10 mA; Tamb = 25 °C

100

180

300

VCE = 1 V; IC = 50 mA; Tamb = 25 °C

60

105

-

VCE = 1 V; IC = 100 mA; Tamb = 25 °C

30

50

-

IC = 10 mA; IB = 1 mA; Tamb = 25 °C

-

75

200

mV

IC = 50 mA; IB = 5 mA; Tamb = 25 °C

-

120

300

mV

base-emitter saturation IC = 10 mA; IB = 1 mA; Tamb = 25 °C
voltage
IC = 50 mA; IB = 5 mA; Tamb = 25 °C

650

750

850

mV

-

850

950

mV

td

delay time

-

-

35

ns

tr

rise time

-

-

35

ns

ton

turn-on time

-

-

70

ns

ts

storage time

-

-

200

ns

tf

fall time

-

-

50

ns

toff

turn-off time

-

-

250

ns

Cc

collector capacitance

VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C

-

-

4

pF

Ce

emitter capacitance

VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C

-

-

8

pF

fT

transition frequency

VCE = 20 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C

300

-

-

MHz

NF

noise figure

VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f =10 Hz to 15.7 kHz

-

-

5

dB

ICBO

collector-base cut-off
current

VCB = -30 V; IE = 0 A; Tamb = 25 °C

-

-

-50

nA

IEBO

emitter-base cut-off
current

VEB = -6 V; IC = 0 A; Tamb = 25 °C

-

-

-50

nA

hFE

DC current gain

VCE = -1 V; IC = -0.1 mA; Tamb = 25 °C

60

180

-

VCE = -1 V; IC = -1 mA; Tamb = 25 °C

80

180

-

VCE = -1 V; IC = -10 mA; Tamb = 25 °C

100

180

300

VCE = -1 V; IC = -50 mA; Tamb = 25 °C

60

130

-

VCE = -1 V; IC = -100 mA; Tamb = 25 °C

30

50

-

IC = -10 mA; IB = -1 mA; Tamb = 25 °C

-

-100

-250

V

VCEsatVBEsatcollector-emittersaturation voltage

IC = 10 mA; IBon = 1 mA; IBoff = -1 mA;
VCC = 3 V; Tamb = 25 °C

TR2 (PNP)

VCEsatcollector-emittersaturation voltage

IC = -50 mA; IB = -5 mA; Tamb = 25 °C

-

-165

-400

V

VBEsatbase-emitter saturation IC = -10 mA; IB = -1 mA; Tamb = 25 °C
voltage
IC = -50 mA; IB = -5 mA; Tamb = 25 °C

-

-750

-850

mV

-

-850

-950

mV

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40 V, 200 mA NPN/PNP general-purpose double transistor
SymbolParameter

Conditions

Min

Typ

Max

Unit

td

delay time

-

-

35

ns

tr

rise time

IC = -10 mA; IBon = -1 mA; IBoff = 1 mA;
VCC = -3 V; Tamb = 25 °C

-

-

35

ns

ton

turn-on time

-

-

70

ns

ts

storage time

-

-

225

ns

tf

fall time

-

-

75

ns

toff

turn-off time

-

-

300

ns

Cc

collector capacitance

VCB = -5 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C

-

-

4.5

pF

Ce

emitter capacitance

VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C

-

-

10

pF

fT

transition frequency

VCE = -20 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C

250

-

-

MHz

NF

noise figure

VCE = -5 V; RS = 1 kΩ; IC = -100 µA; f =10 Hz to 15.7 kHz; Tamb = 25 °C

-

-

4

dB

006aab115

600

006aab116

0.20
IC
(A)

hFE

IB (mA) = 5.0

4.5

4.0

3.5

3.0

2.5

0.15
400

2.0
(1)

1.5

1.0

0.10

0.5
(2)

200

0.05

(3)

0
10- 1

1

10

102

IC (mA)

0.0

103

VCE = 1 V
(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 3.

0

2

4

6

8

VCE (V)

10

Tamb = 25 °C
Fig. 4.

TR1 (NPN): Collector current as a function ofcollector-emitter voltage; typical values

TR1 (NPN): DC current gain as a function ofcollector current; typical values

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40 V, 200 mA NPN/PNP general-purpose double transistor
006aab117

1.2
VBE
(V)

VBEsat
(V)

(1)

0.8

006aab118

1.3

(1)

0.9

(2)

(2)
(3)

0.4

0
10- 1

1

10

102

IC (mA)

0.1
10- 1

103

VCE = 1 V
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C
Fig. 5.

(3)

0.5

1

10

102

IC (mA)

103

IC/IB = 10
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

TR1 (NPN): Base-emitter voltage as a functionof collector current; typical values
006aab119

1

Fig. 6.

TR1 (NPN): Base-emitter saturation voltage as afunction of collector current; typical values

hFE
VCEsat(V)

006aab120

400
(1)

300

10- 1

(1)

(2)

200

(2)

(3)

100

10- 2
10- 1

Fig. 7.

1

10

102

IC (mA)0- 10- 1

103

(3)

-1

- 10

- 102

IC (mA)- 103

IC/IB = 10
(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

VCE = -1 V
(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = -55 °C

TR1 (NPN): Collector-emitter saturation voltage Fig. 8.
as a function of collector current; typical values

TR2 (PNP): DC current gain as a function ofcollector current; typical values

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40 V, 200 mA NPN/PNP general-purpose double transistor
006aab121- 0.3

IB (mA) = - 5.0
- 4.5
- 4.0
- 3.5
- 3.0

IC
(A)

006aab123

- 1.2
VBE
(V)
- 1.0

- 2.5
- 2.0

- 0.2

(1)

- 0.8

- 1.5

(2)

- 1.0
- 0.6
- 0.1

(3)

- 0.5
- 0.4

0

0

-2

-4

-6

-8

- 0.2
- 10- 1- 10
VCE (V)

Tamb = 25 °C
Fig. 9.

-1

- 10

- 102

IC (mA)- 103

VCE = -1 V
(1) Tamb = -55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

TR2 (PNP): Collector current as a function ofcollector-emitter voltage; typical values

Fig. 10. TR2 (PNP): Base-emitter voltage as a functionof collector current; typical values
006aab124- 1.2

006aab122-1

VBEsat(V)- 1.0

VCEsat
(V)

(1)

- 0.8

(2)

- 10- 1
- 0.6

(1)
(2)
(3)

(3)

- 0.4

- 0.2
- 10- 1

-1

- 10

- 102

IC (mA)- 103- 10- 2- 10- 1

IC/IB = 10
(1) Tamb = -55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

-1

- 10

- 102

IC (mA)- 103

IC/IB = 10
(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = -55 °C

Fig. 11. TR2 (PNP): Base-emitter saturation voltage as a Fig. 12. TR2 (PNP): Collector-emitter saturation voltage
function of collector current; typical values
as a function of collector current; typical values

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40 V, 200 mA NPN/PNP general-purpose double transistor

11. Test information
VBB
RB

VCC
RC

Vo

(probe)oscilloscope(probe)

450 Ω

450 Ω
R2

VI

oscilloscope

DUT

R1
mlb826

Fig. 13. TR1 (NPN): Test circuit for switching times
VBB
RB

VCC
RC

Vo

(probe)oscilloscope
450 Ω(probe)
450 Ω

R2

VI

oscilloscope

DUT

R1
mgd624

Fig. 14. TR2 (PNP): Test circuit for switching times

Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

12. Package outline
2.2
1.8
6

2.2 1.35
2.0 1.15

1.1
0.8
5

4

2

3

0.45
0.15

pin 1
index

1
0.65
1.3

0.3
0.2

0.25
0.10

Dimensions in mm

14-10-03

Fig. 15. Package outline TSSOP6 (SOT363)

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40 V, 200 mA NPN/PNP general-purpose double transistor

13. Soldering
2.65

solder lands
2.35 1.5

0.4 (2×)

0.6 0.5(4×) (4×)

solder resist
solder paste

0.5
(4×)

0.6
(2×)

occupied area

0.6
(4×)

Dimensions in mm
1.8

sot363_fr

Fig. 16. Reflow soldering footprint for TSSOP6 (SOT363)

1.5
solder lands
0.3 2.5

4.5

1.5

solder resist
occupied area
Dimensions in mm

1.3

preferred transport
direction during soldering

1.3
2.45
5.3

sot363_fw

Fig. 17. Wave soldering footprint for TSSOP6 (SOT363)

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40 V, 200 mA NPN/PNP general-purpose double transistor

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

PMBT3946YPN-Q v.1

Product data sheet--

PMBT3946YPN-Q

Product data sheet

20231123

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40 V, 200 mA NPN/PNP general-purpose double transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

15. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outsideof Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for thecustomer’s applications and products using Nexperia products in order toavoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement isconcluded only the terms and conditions of the respective agreement shallapply. Nexperia hereby expressly objects to applying the customer’s generalterms and conditions with regard to the purchase of Nexperia products bycustomer.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia producthas been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems or

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40 V, 200 mA NPN/PNP general-purpose double transistor

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 9
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................11
15. Legal information......................................................12© Nexperia B.V. 2023. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 23 November 2023

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