ESD protection for USB3.2, USB4TM, Thunderbolt, HDMI 2.1 & Universal FlashTrEOS ESD protection
for USB Type-C®

Nexperia‘s TrEOS Protection offers the ideal combination of low capacitance, low clamping
voltage and high ESD robustness for your design. Helping safeguard 20 Gbps data lines
systems against ESD and surge events.

TrEOS Protection
Optimizing the three pillars of ESD protection:
1. Low capacitance for highest signal integrity down to 0.1 pF
2. Low clamping & trigger for enhanced system protection
down to 0.1 Ω (Rdyn)
3. H igh robustness against ESD up to 30 kV & Surge up to 20
A at 8/20 μs

Functions & Applications› USB Type-C (USB 2.0 / 3.2 / 4)
› Thunderbolt (up 40 Gbps)› HDMI 2.1, FRL (up to 12 Gbps) and TMDS
› SD-Card protection› All other sensitive I/Os

The ideal combination for every design

Key features› Available in specifications between 1.2 V and 9 V VRWM
› Extremely fast switching time under 1 ns
› Snap-back technology allows for lowest clamping voltage› Suitable for up to ~20Gbps per line pair
› Reliable protection for sensitive transceiver SoCs
› Ultra-low dynamic resistance/ capacitance combination› Exceeding IEC61000-4-2 level 4, offering IEC61000-4-5
grade robustness› Available in 3 very compact, low-inductance and extremerobustness DSN packages)

Automotive
IVN Protection
Supplylines
KeypadButtons

Complexity ofESD protection

USB 2.0
USB4/3.2

Signal Integrity(capacitance)

NFC

System Protect(clamping)Nexperia TrEOS portfolio for high-speed data-lines
Our TrEOS family is composed of two subsets of devices
which can be employed together or separately:› Extremely high surge robustness devices are designed
to be placed between the connector and AC capacitor
to protect the decoupling capacitor and transceiveragainst possible peak pulses (up to 20 A).
› Extremely low peak voltages devices are designed
to be placed between the capacitor and the device,offering industry-leading low-trigger voltage tomaximize system-level protection (Vt1 as low as 3.5 V).

MatedConnector

AC Capacitor(optional for USB3.2
mandatory for USB4TM)

Rxp
Rxn

Transceiver

Txp
Txn
AC Capacitor

Combining a protection device from both subsets issuggested, to achieve ultimate ESD protection.

Portfolio selection

Extremely highsurgeratings

TypeDirection

PESD6V5C1USF

Unidirectional

Protectedlines(V)Clinetyp (pF)

ESD ratingmax (kV)Surgerobustness 8/20μs (A)

6.5

0.45

20

90.1

2.8

0.1

10

4.5

0.45

PESD3V3Z1BSF

3.30.28

20

9.5

0.19

PESD4V0Z1BCSF

40.45

25

15

0.11

PESD4V0W1BCSF

40.55

30

200.1

50.2

20

90.23

50.15

15

70.25

PESD5V0C1BSF
PESD5V0H1BSF
PESD7V0C1BSF

1Bidirectional

70.2

20

90.23PESD7V0H1BSF

70.15

15

70.25

PESD9V0C1BSF

90.2

18

8.50.2

PESD9V0W1BCSF

90.530200.1

PUSB3BB2DFType

Direction

0.17

15

70.21

DSN0402-2

40.26

2080.25

DFN0603-3

Protectedlines

VRWM(V)Cline
typ (pF)

ESD ratingmax (kV)

Trigger voltage
Vt1 (V)

Rdyn (Ω)

Package

1.2

0.26

15

3.5

0.26

20.69

20

4.3

0.2

2.5

0.25

15

4.90.23

PESD3V3Y1BSF

3.30.24

15

70.25

PESD4V0Y1BSF

40.24

15

70.25

Bidirectional

DSN0603-25PESD2V0Y1BSF
PESD2V5Y1BSF

Package

2

PESD1V2Y1BSF

1

Package details
TrEOS solutions are available in the high-compactness, lowinductance, extreme-robustness DSN- and DFN packages.
These small-footprint packages allow to reduce clamping
voltage by up to 50% compared to bond-wire alternatives.

DSN0603-2

SOD992B(DSN0402)

SOD962-2(DSN0603-2)

SOT8013(DFN0603-3)

0.4 x 0.2 x 0.2

0.6 x 0.3 x 0.3

0.6 x 0.3 x 0.3

TrEOS protection solutions also exist with common mode filtering and for multi-line needs.
Browse our full portfolio: https://www.nexperia.com/usb-type-c-protection© 2020 Nexperia B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of
the copyright owner. The information presented in this document does not form part of any quotationor contract, is believed to be accurate and reliable and may be changed without notice. No liability will
be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor
imply any license under patent- or other industrial or intellectual property rights.

nexperia.com

Rdyn (Ω)

PESD2V8R1BSF

PESD5V0H1BSN

Extremely low
peak voltages

VRWM

Date of release:
March 2020
Printed:In the Netherlands