BUK7Y7R8-80E

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56
8 May 2013

Product data sheet

1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.

2. Features and benefits••••

Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

3. Applications••••

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

4. Quick reference data
Table 1.

Quick reference data

SymbolParameter

Conditions

MinTypMax

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

--80

VID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 1--100A

Ptot

total power dissipation

Tmb = 25 °C; Fig. 2--238

W

VGS = 10 V; ID = 25 A; Tj = 25 °C;

-5.9

7.8mΩ

-17-nC[1]

Static characteristics
RDSon

drain-source on-state
resistanceFig. 11

Dynamic characteristics
QGD

gate-drain charge

VGS = 10 V; ID = 25 A; VDS = 64 V;
Tj = 25 °C; Fig. 13; Fig. 14[1]

Continuous current is limited by package.

BUK7Y7R8-80E

Nexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56

5. Pinning information
Table 2.

Pinning information

PinSymbol Description

1S

source2Ssource3Ssource4

Ggatemb

Dmounting base; connected todrain

Simplified outline

Graphic symbol
Dmb

Gmbb076S

1 2 3 4

LFPAK56; PowerSO8 (SOT669)

6. Ordering information
Table 3.

Ordering information

Type numberPackage

BUK7Y7R8-80E

NameDescription

VersionLFPAK56;
Power-SO8

Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads

SOT6697. Marking
Table 4.

Marking codes

Type number

Marking code

BUK7Y7R8-80E

77E8808. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMax

UnitVDSdrain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C-80VVDGR

drain-gate voltage

RGS = 20 kΩ

-80

VVGSgate-source voltage

Tj ≤ 175 °C; DC-2020VID

drain current

Tmb = 25 °C; VGS = 10 V; Fig. 1[1]-100

A

Tmb = 100 °C; VGS = 10 V; Fig. 1[1]-78A

IDM

peak drain current

Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4-441

APtot

total power dissipation

Tmb = 25 °C; Fig. 2-238

WTstg

storage temperature

-55

175°C

BUK7Y7R8-80E

Product data sheet

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N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56
SymbolParameter

Conditions

Tjjunction temperature

MinMax

Unit

-55

175°C

-

100A-

441

A-

148mJ

Source-drain diodeISsource current

Tmb = 25 °C

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C[1]

Avalanche ruggedness
EDS(AL)S

non-repetitive drain-source
avalanche energy

ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω;[2][3]

VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3

[1]
[2]
[3]

Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
003aai745

150
ID
(A)

03aa16120
Pder
(%)

10080

(1)

50040050100150

Tmb (°C)(1) Capped at 100A due to package
Fig. 1.

Continuous drain current as a function ofmounting base temperature

BUK7Y7R8-80E

Product data sheet

0200

Fig. 2.

0100150Tmb (°C)

200

Normalized total power dissipation as afunction of mounting base temperature

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BUK7Y7R8-80E

Nexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56003aai746

103
IAL
(A)
102

10(1)

(2)

1(3)

10-1
10-3

Fig. 3.

10-2

10-1

1tAL (ms)

10Avalanche rating; avalanche current as a function of avalanche time003aai747

103
ID
(A)

Limit R DSon = VDS / ID
tp =10 µ s

102100 µ s
10DC

11 ms
10 ms
100 ms

10-1

10-2

Fig. 4.

1102

10103

VDS (V)

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameter

Conditions

MinTypMax

UnitRth(j-mb)

thermal resistancefrom junction tomounting baseFig. 5--0.63

K/W

BUK7Y7R8-80E

Product data sheet

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N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56

1Zth(j-mb)(K/W)

10-1003aai463

δ = 0.5
0.2
0.1
0.05
0.02

single shot

10-2

P

δ=

tp
10-3
10-6

Fig. 5.

10-5

10-4

10-3

10-2

10-1

tp
Tt
T
tp (s)

1

Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7.

Characteristics

SymbolParameterConditions

MinTypMaxUnitID = 250 µA; VGS = 0 V; Tj = 25 °C80--V

ID = 250 µA; VGS = 0 V; Tj = -55 °C

72--V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

2.434V--4.5

V

1--V

VDS = 80 V; VGS = 0 V; Tj = 25 °C-0.1310µA

VDS = 80 V; VGS = 0 V; Tj = 175 °C--500µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C-2100nA

VGS = -20 V; VDS = 0 V; Tj = 25 °C-2100nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;-5.9

7.8mΩ--19.6mΩ

Static characteristics
V(BR)DSS

VGS(th)drain-source
breakdown voltage
gate-source thresholdvoltageFig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9IDSS

IGSS

RDSon

drain leakage current

gate leakage current

drain-source on-state
resistanceFig. 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12

Dynamic characteristics
QG(tot)total gate charge

ID = 25 A; VDS = 64 V; VGS = 10 V;-63.3-nC

QGSgate-source charge

Tj = 25 °C; Fig. 13; Fig. 14-17.3-nC

QGD

gate-drain charge-17-nCBUK7Y7R8-80E

Product data sheet

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BUK7Y7R8-80E

Nexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56
SymbolParameter

Conditions

Min

TypMaxUnit

Cissinput capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

-4010

5347

pF

Cossoutput capacitance

Tj = 25 °C; Fig. 15-

395

474

pF

Crss

reverse transfer
capacitance-

199272pF

td(on)

turn-on delay time

VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;

-16-

ns

tr

rise timeRG(ext) = 5 Ω; Tj = 25 °C

-25-

ns

td(off)turn-off delay time

-43-

nstf

fall time

-

24-

ns

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16-0.82

1.2V

Source-drain diodeVSD

source-drain voltagetrrreverse recovery time

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

-37-nsrecovered charge

VDS = 25 V; Tj = 25 °C-56.3-nC

Qr

003aai749

280ID(A)VGS (V) =10210

15106700RDSon(mΩ )76.514055.55
4.501

203 V (V) 4DS

Tj = 25 °C; tp = 300 μs
Fig. 6.

Fig. 7.

Output characteristics; drain current as afunction of drain-source voltage; typical values

BUK7Y7R8-80E

Product data sheet

003aai750

2001015 VGS (V)20

Drain-source on-state resistance as a functionof gate-source voltage; typical values

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BUK7Y7R8-80ENexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56003aai752

240003aah027

5VGS(th)
(V)

ID
(A)

max

4160
3

typ2min80
1

Tj = 175 °C
Tj = 25 °C0Fig. 8.

046VGS (V)0-60

8Transfer characteristics; drain current as afunction of gate-source voltage; typical values

Fig. 9.

003aah028

10-1060120

180Gate-source threshold voltage as a function ofjunction temperature

003aai755

20ID(A)T j (°C)

RDSon(mΩ )10-2

515min10-3

typ5.566.5max

71010-4

10-5

10-6

VGS (V) = 105024VGS (V)

06Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

BUK7Y7R8-80E

Product data sheet

050100ID (A)150

Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values

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BUK7Y7R8-80ENexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56003aaj817

3003aai757

10V GS(V)

a
2.4

8

1.8

6

1.2

4

0.6

20-60

060

120

Tj ( °C)

0180

Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature

VDS = 14V
VDS = 64V

02550

QG (nC)

75Fig. 13. Gate-source voltage as a function of gatecharge; typical values

003aai758104VDSC(pF)

ID

Ciss

VGS(pl)VGS(th)

103

VGS
QGS1

QGS2

QGS

Coss

QGD

QG(tot)

Crss003aaa508

102
10-1

Fig. 14. Gate charge waveform definitions

110VDS (V)102

Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvalues

BUK7Y7R8-80E

Product data sheet

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BUK7Y7R8-80E

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N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56

003aai759

400IS(A)300

200

Tj = 175 °C

100

Tj = 25 ° C
000.3

0.6

0.9 VSD (V)

1.2Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

BUK7Y7R8-80E

Product data sheet

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BUK7Y7R8-80ENexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56

11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads

EA2A

SOT669

Cc2

b2

E1b3

L1mountingbaseb4
D1DH

L2123e4wbAX

c1/2 eA(A3)A1

CqL

detail X

0y C

θ5 mm

8°

scale

0°

Dimensions (mm are the original dimensions)
Unit(1)
mm

AA1

A2

A3

bcc2

D(1) D1(1) E(1) E1(1)

b2

b3

b4

max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62

2.20.90.25 0.30 4.10 4.20

5.03.32.0

0.7

0.19 0.24 3.80

4.8

3.1e
1.27

HLL1L2

6.2

0.85

1.3

1.3

5.8

0.40

0.8

0.8

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outlineversion
SOT669References
IEC

JEDEC

JEITAw

y

0.25

0.1

sot669_po

Europeanprojection

Issue date
11-03-25
13-02-27

MO-235

Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
BUK7Y7R8-80E

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BUK7Y7R8-80ENexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56
In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

12. Legal information
12.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Document
status [1][2]Product
status [3]Objective[short] data
sheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] data
sheet

Qualification

This document contains data from thepreliminary specification.

Product[short] data
sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Definition

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
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12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
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Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperia
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12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an information
source outside of Nexperia.

BUK7Y7R8-80E

Product data sheet

Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned
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Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperia
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and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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BUK7Y7R8-80ENexperia

N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56
No offer to sell or license — Nothing in this document may be interpreted
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or other industrial or intellectual property rights.
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between the translated and English versions.

12.4 Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

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Product data sheet

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N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56

13. Contents
1General description ............................................... 1

2Features and benefits ............................................13Applications ........................................................... 1

4Quick reference data ............................................. 15Pinning information ............................................... 2

6Ordering information ............................................. 2

7Marking ................................................................... 2

8Limiting values .......................................................29Thermal characteristics .........................................410Characteristics ....................................................... 511Package outline ................................................... 101212.112.212.312.4

Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11Disclaimers .........................................................11Trademarks ........................................................ 12© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 08 May 2013

BUK7Y7R8-80E

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