SO
T2
3

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor
9 July 2013

Product data sheet

1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23
Surface-Mounted Device (SMD) plastic package.

2. Features and benefits
•
•
•
•
•

Small SMD plastic package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency due to less heat generation
AEC-Q101 qualified

3. Applications
•
•
•
•
•

DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)

4. Quick reference data
Table 1.

Quick reference data

SymbolParameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter
voltageopen base

-

-

-30

V

IC

collector current

-

-

-1

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

-

-3

A

RCEsatcollector-emittersaturation resistance

IC = -500 mA; IB = -50 mA; pulsed;

-

-

220

mΩ

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor

5. Pinning information
Table 2.

Pinning information

Pin

Symbol Description

1

B

base

2

E

emitter3

Ccollector

Simplified outline

Graphic symbol
C

3

B
1

2

TO-236AB (SOT23)

E

sym132

6. Ordering information
Table 3.

Ordering information

Type number
PBSS5130T

Package
Name

Description

VersionTO-236AB

plastic surface-mounted package; 3 leads

SOT23

7. Marking
Table 4.

Marking codes

Type number

Marking code
[1]

PBSS5130T%3E[1]

PBSS5130T

Product data sheet% = placeholder for manufacturing site code

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor

8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

-30

V

VCEO

collector-emitter voltage

open base

-

-30

V

VEBO

emitter-base voltage

open collector

-

-5

V

IC

collector current

-

-1

A

ICM

peak collector current

-

-3

A

IBM

peak base current

-

-300

mA

Ptot

total power dissipation

[1]

-

300

mW

[2]

-

480

mW

single pulse; tp ≤ 1 ms

Tamb ≤ 25 °C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1]
[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .

9. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameter

Rth(j-a)thermal resistancefrom junction toambient[1][2]

PBSS5130T

Product data sheet

Conditionsin free air

Min

Typ

Max

Unit

[1]

-

-

417

K/W

[2]

-

-

260

K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor

10. Characteristics
Table 7.

Characteristics

SymbolParameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off
current

VCB = -30 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

VCB = -30 V; IE = 0 A; Tj = 150 °C

-

-

-50

µA

IEBO

emitter-base cut-off
current

VEB = -4 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

hFE

DC current gain

VCE = -2 V; IC = -100 mA; pulsed;

300

450

-

260

350

-

210

290

-

-

-

-100

mV

-

-

-225

mV

-

-

220

mΩ

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCEsatcollector-emittersaturation voltage

IC = -100 mA; IB = -1 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

RCEsatcollector-emittersaturation resistance

IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

VBEsatbase-emitter saturation IC = -2 A; IB = -200 mA; pulsed;
voltagetp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-

-1.1

V

VBEon

base-emitter turn-on
voltage

VCE = -2 V; IC = -100 mA; pulsed;

-

-

-0.75

V

transition frequency

VCE = -10 V; IC = -100 mA;

100

200

-

MHz

-

-

28

pF

fT

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
f = 100 MHz; Tamb = 25 °C

Cccollector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C

PBSS5130T

Product data sheet

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor

aaa-006394

1000

aaa-006395

-1.0

hFE

IB (mA) = -3

IC
(A)

800

-2.7

-0.8

-2.4

(1)

-2.1

600

-1.8

-0.6

-1.5
-1.2

(2)

400

-0.4

-0.9
-0.6

(3)

200

-0.2
-0.3

0
-10-1

-1

-10

-102

0

-103
-104
IC (mA)

VCE = -2 V

-1

-2

-3

-4

VCE (V)-5

Tamb = 25 °C(1) Tamb = 150 °C

Fig. 2.

(2) Tamb = 25 °C

Collector current as a function of collectoremitter voltage; typical values(3) Tamb = -55 °C
Fig. 1.

0

DC current gain as a function of collector
current; typical values
aaa-006396-1200

aaa-006397

-1200

VBE
(mV)

VBEsat
(mV)
(1)

(1)

-800

-800
(2)

(2)

(3)

-400

0
-10-1

Fig. 3.

-400

(3)

-1

-10

-102

0
-10-1

-103
-104
IC (mA)-1-10

VCE = -2 V

IC/IB = 20

(1) Tamb = 150 °C(1) Tamb = -55 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = -55 °C(3) Tamb = 150 °C

Base-emitter voltage as a function of collector
current; typical values

PBSS5130T

Product data sheet

Fig. 4.

-103-104
IC (mA)

Base-emitter saturation voltage as a function ofcollector current; typical values

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-102

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor

aaa-006398-103

aaa-006406

103
RCEsat(Ω)

VCEsat
(mV)

102

(1)
(2)

-102

(3)

10

-10

(1)
(2)

1
(3)

-1
-10-1

Fig. 5.

-1

-10

-102

10-1
-10-1

-103
-104
IC (mA)-1-10

IC/IB = 20

IC/IB = 20

(1) Tamb = 150 °C(1) Tamb = 150 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = -55 °C(3) Tamb = -55 °C

Collector-emitter saturation voltage as afunction of collector current; typical values

Fig. 6.

-102

-103
-104
IC (mA)

Collector-emitter saturation resistance as afunction of collector current; typical values

11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

12. Package outline
3.0
2.8

1.1
0.9
3

0.45
0.15
2.5 1.4
2.1 1.2

1

2

1.9

0.48
0.38

Dimensions in mm

Fig. 7.

0.15
0.09
04-11-04

Package outline TO-236AB (SOT23)

PBSS5130T

Product data sheet

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30 V; 1 A PNP low VCEsat (BISS) transistor

13. Soldering
3.3
2.9
1.9

solder lands

3solder resist2

1.7

solder paste
occupied area

0.6
(3×)

0.7
(3×)

Dimensions in mm
0.5
(3×)
0.6
(3×)
1

Fig. 8.

sot023_fr

Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)

1.4
(2×)
solder lands
4.6

solder resist

2.6

occupied area
Dimensions in mm

1.4

preferred transport direction during soldering
2.8
4.5

Fig. 9.

sot023_fw

Wave soldering footprint for TO-236AB (SOT23)

PBSS5130T

Product data sheet

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor

14. Revision history
Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PBSS5130T v.2

20130709

Product data sheet-

PBSS5130T v.1

Modifications:

•
•
•
•
•
•
•
•
•
•
•

PBSS5130T v.1

PBSS5130T

Product data sheet

The format of this document has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Sections "General description", "Features and benefits" and "Applications": updated
Section "Marking": updated
Table "Limiting values": ambient temperature Tamb updated
Table "Characteristics": base-emitter saturation voltage VBEsat added
Figures 1 to 6: added
Section "Test information": added
Figure "Package outline TO-236AB (SOT23)": replaced by minimized outline drawing
Section "Soldering": added
Section "Legal information": updated

20031212

Product data sheet-

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

15. Legal information
15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of NXP Semiconductors.

Document
status [1][2]Product
status [3]Objective[short] data
sheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] data
sheet

Qualification

This document contains data from thepreliminary specification.

Product[short] data
sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Definition

Right to make changes — NXP Semiconductors reserves the right tomake changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.

15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the NXP Semiconductors productis deemed to offer functions and qualities beyond those described in the
Product data sheet.

15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. NXP Semiconductors takes noresponsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.

PBSS5130T

Product data sheet

Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability forinclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of NXP Semiconductors products by customer.

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NXP Semiconductors

30 V; 1 A PNP low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

15.4 Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.

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PBSS5130T

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30 V; 1 A PNP low VCEsat (BISS) transistor

16. Contents
1

General description ............................................... 1

2

Features and benefits ............................................1

3

Applications ........................................................... 1

4

Quick reference data ............................................. 1

5

Pinning information ............................................... 2

6

Ordering information ............................................. 2

7

Marking ................................................................... 2

8

Limiting values .......................................................3

9

Thermal characteristics .........................................3

10

Characteristics ....................................................... 4

11
11.1

Test information ..................................................... 6
Quality information ............................................... 6

12

Package outline ..................................................... 6

13

Soldering ................................................................ 7

14

Revision history ..................................................... 8

15
15.1
15.2
15.3
15.4

Legal information ...................................................9
Data sheet status ................................................. 9
Definitions .............................................................9Disclaimers ...........................................................9
Trademarks ........................................................ 10© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 July 2013

PBSS5130T

Product data sheet

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