PBSS5160QA

60 V, 1 A PNP low VCEsat (BISS) transistor
23 August 2013

Product data sheet

1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
NPN complement: PBSS4160QA.

2. Features and benefits
•
•
•
•
•
•
•

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified

3. Applications
•
•
•
•
•

Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)

4. Quick reference data
Table 1.

Quick reference data

SymbolParameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter
voltageopen base

-

-

-60

V

IC

collector current

-

-

-1

A

ICM

peak collector current

tp ≤ 1 ms; pulsed

-

-

-1.5

A

RCEsatcollector-emittersaturation resistance

IC = -1 A; IB = -100 mA; pulsed;

-

225

330

mΩ

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

PBSS5160QA

Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

5. Pinning information
Table 2.

Pinning information

Pin

Symbol Description

1

B

base

2

E

emitter3

Ccollector

4Ccollector

Simplified outline

Graphic symbol
C

1

B
4

3

E

sym132

2
Transparent top view

DFN1010D-3 (SOT1215)

6. Ordering information
Table 3.

Ordering information

Type number

Package

PBSS5160QA

Name

Description

Version

DFN1010D-3

plastic thermal enhanced ultra thin small outline package; noleads; 3 terminals

SOT1215

7. Marking
Table 4.

Marking codes

Type number

Marking code

PBSS5160QA

10 10 10

MARKING CODE
(EXAMPLE)

READINGDIRECTION

YEAR DATECODEVENDOR CODEPIN 1
INDICATION MARK

MARK-FREE AREAREADING EXAMPLE:
11
01
10

Fig. 1.

aaa-008041

DFN1010D-3 (SOT1215) binary marking code description

PBSS5160QA

Product data sheet

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Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

-60

V

VCEO

collector-emitter voltage

open base

-

-60

V

VEBO

emitter-base voltage

open collector

-

-7

V

IC

collector current

-

-1

A

ICM

peak collector current

-

-1.5

A

IB

base current

-

-0.3

A

IBM

peak base current

tp ≤ 1 ms; pulsed

-

-1

A

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

325

mW

[2]

-

600

mW

[3]

-

740

mW

[4]

-

540

mW

[5]

-

1000

mW

tp ≤ 1 ms; pulsed

Tjjunction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1]
[2]
[3]
[4]
[5]

PBSS5160QA

Product data sheet

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm .
2

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
2

Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm .

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PBSS5160QA

Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

aaa-007844

1.25
Ptot
(W)
1.00 (1)0.75 (2)
(3)

0.50

(4)

(5)

0.25

0
-75

-25

(1) FR4 PCB, 4-layer copper, 1 cm

25

75

125
175
Tamb (°C)2(2) FR4 PCB, single-sided copper, 6 cm

22(3) FR4 PCB, single-sided copper, 1 cm
(4) FR4 PCB, 4-layer copper, standard footprint(5) FR4 PCB, single-sided copper, standard footprint
Fig. 2.

Power derating curves

9. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameter

Rth(j-a)thermal resistancefrom junction toambient

[1]
[2]
[3]
[4]
[5]

PBSS5160QA

Product data sheet

Conditionsin free air

Min

Typ

Max

Unit

[1]

-

-

385

K/W

[2]

-

-

209

K/W

[3]

-

-

169

K/W

[4]

-

-

232

K/W

[5]

-

-

125

K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm .
2

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
2

Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm .

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PBSS5160QA

Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

aaa-007845

103
duty cycle = 1

Zth(j-a)
(K/W)

0.75

102

0.5

0.33
0.2
0.1
0.05

10

0.02

0.01

0
1
10-5

10-4

10-3

10-2

10-1

1

10

102

tp (s)

103

FR4 PCB, single-sided copper, standard footprint
Fig. 3.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007846

103
Zth(j-a)(K/W)

duty cycle = 1

102

0.75
0.33

0.5
0.2

0.1
0.05

10
0.02

1

0.01

0

10-1
10-5

10-4

10-3

10-2

FR4 PCB, single-sided copper, 1 cm
Fig. 4.

10-1

1

10

102

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBSS5160QA

Product data sheet

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Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

aaa-007847

103
Zth(j-a)(K/W)

duty cycle = 1

102

0.75
0.33

0.5
0.2

0.1
10

0.05
0.02
0.01

1
10-5

0
10-4

10-3

10-2

FR4 PCB, single-sided copper, 6 cm
Fig. 5.

10-1

1

10

102

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848

103
Zth(j-a)(K/W)

duty cycle = 1

102

0.75

0.5

0.33
0.2
0.1
0.05

10
0.02

1
10-5

0.01

0
10-4

10-3

10-2

10-1

1

10

102

tp (s)

103

FR4 PCB, 4-layer copper, standard footprint
Fig. 6.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBSS5160QA

Product data sheet

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Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

aaa-007849

103
Zth(j-a)(K/W)
102

duty cycle = 1
0.75

0.5

0.33
0.2
10

0.1
0.05
0.02

1
10-5

0.01

0

10-4

10-3

FR4 PCB, 4-layer copper, 1 cm
Fig. 7.

10-2

10-1

1

102

10

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics
Table 7.

Characteristics

SymbolParameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off
current

VCB = -48 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

VCB = -48 V; IE = 0 A; Tj = 150 °C

-

-

-50

µA

ICES

collector-emitter cut-off VCE = -48 V; VBE = 0 V; Tamb = 25 °C
current

-

-

-100

nA

IEBO

emitter-base cut-off
current

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

hFE

DC current gain

VCE = -2 V; IC = -100 mA; tp ≤ 300 µs;

160

250

-

120

185

-

85

125

-

-

-125

-190

mV

-

-315

-460

mV

-

-225

-330

mV

-

225

330

mΩ

δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = -2 V; IC = -500 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = -2 V; IC = -1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCEsatcollector-emittersaturation voltage

IC = -500 mA; IB = -50 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -50 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

RCEsatcollector-emittersaturation resistancePBSS5160QA

Product data sheet

IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

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60 V, 1 A PNP low VCEsat (BISS) transistor
SymbolParameter

Conditions

Min

Typ

Max

Unit

VBEsatbase-emitter saturation IC = -500 mA; IB = -50 mA; pulsed;
voltagetp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-0.88

-1

V

-

-0.94

-1.05

V

-

-0.97

-1.1

V

-

-0.8

-0.9

V

IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEonbase-emitter turn-on
voltage

VCE = -2 V; IC = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

td

delay time

VCC = -10 V; IC = -0.5 A; IBon = -25 mA;

-

15

-

ns

tr

rise time

IBoff = 25 mA; Tamb = 25 °C

-

35

-

ns

ton

turn-on time

-

50

-

ns

ts

storage time

-

300

-

ns

tf

fall time

-

50

-

ns

toff

turn-off time

-

350

-

ns

fT

transition frequency

100

150

-

MHz

-

12

15

pF

VCE = -10 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C

Cccollector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-007887

103

hFE

IB = -13 mA -11.7-10.4 -9.1

IC
(A)

(1)

-7.8

-1.0

(2)

102

aaa-007888

-1.5

-6.5
-5.2

(3)

-3.9
-0.5

-2.6
-1.3

10
-10-1

-1

-10

-102

0

-103
-104
IC (mA)

VCE = −2 V

-1

-2

-3

-4

VCE (V)-5

Tamb = 25 °C(1) Tamb = 100 °C

Fig. 9.

(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 8.

0

Collector current as a function of collectoremitter voltage; typical values

DC current gain as a function of collector
current; typical values

PBSS5160QA

Product data sheet

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60 V, 1 A PNP low VCEsat (BISS) transistor

aaa-007890-1.2

aaa-007891

-1.2

VBE
(V)

VBEsat
(V)

-0.8

-0.4

-0.8
(1)

(1)

(2)

(2)

-0.4

(3)

0
-10-1

-1

-10

-102

0
-10-1

-103
-104
IC (mA)

(3)

-1

-10

VCE = −2 V

IC/IB = 20

(1) Tamb = −55 °C(1) Tamb = −55 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = 100 °C(3) Tamb = 100 °C

Fig. 10. Base-emitter voltage as a function of collector
current; typical values

VCEsat(V)

aaa-007894-1

VCEsat
(V)

(1)

(2)

-10-1

-103
-104
IC (mA)

Fig. 11. Base-emitter saturation voltage as a function ofcollector current; typical values

aaa-007893

-1

-102

-10-1
(1)

(3)

(2)

-10-2
-10-1

-1

-10

-102

-10-2
-10-1

-103
-104
IC (mA)

IC/IB = 20

(3)

-1

(1) IC/IB = 100(2) Tamb = 25 °C(2) IC/IB = 50

(3) Tamb = −55 °C(3) IC/IB = 10

Fig. 12. Collector-emitter saturation voltage as afunction of collector current; typical values

Product data sheet

-102

-103
-104
IC (mA)

Tamb = 25 °C(1) Tamb = 100 °C

PBSS5160QA-10

Fig. 13. Collector-emitter saturation voltage as afunction of collector current; typical values

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60 V, 1 A PNP low VCEsat (BISS) transistor

aaa-007896

103
RCEsat(Ω)

RCEsat
(Ω)

102

102

10

aaa-007895

103

10

(1)

(1)

(2)

1

(2)

1

(3)

(3)

10-1
-10-1

-1

-10

-102

10-1
-10-1

-103
-104
IC (mA)-1

IC/IB = 20

Tamb = 25 °C(1) Tamb = 100 °C(1) IC/IB = 100(2) Tamb = 25 °C(2) IC/IB = 50

(3) Tamb = −55 °C(3) IC/IB= 10

Fig. 14. Collector-emitter saturation resistance as afunction of collector current; typical values

PBSS5160QA

Product data sheet

-10

-102

-103
-104
IC (mA)

Fig. 15. Collector-emitter saturation resistance as afunction of collector current; typical values

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PBSS5160QA

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60 V, 1 A PNP low VCEsat (BISS) transistor

11. Test information- IB
input pulse(idealized waveform)

90 %- I Bon (100 %)10 %- I Boff

output pulse(idealized waveform)

- IC
90 %

- I C (100 %)

10 %
t
td

ts

tr
t on

tf
t off

006aaa266

Fig. 16. BISS transistor switching time definition
VBB
RB

VCC
RC

Vo

(probe)oscilloscope
450 Ω(probe)
450 Ω

R2

VI

oscilloscope

DUT

R1
mgd624

Fig. 17. Test circuit for switching times

11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

PBSS5160QA

Product data sheet

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60 V, 1 A PNP low VCEsat (BISS) transistor

12. Package outline
0.87
0.95
0.75
1
0.95
1.05

0.22
0.30
2

0.16
0.24

0.1
3

0.04
max

0.34
0.40
Dimensions in mm

0.17
0.25

0.245
0.325

1.05
1.15

0.195
0.275

13-03-05

Fig. 18. Package outline DFN1010D-3 (SOT1215)

PBSS5160QA

Product data sheet

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60 V, 1 A PNP low VCEsat (BISS) transistor

13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package

SOT12151.2
0.45 (2x)0.3
1.1

0.35 (2x)0.40.25 (2x)

0.75

0.3

0.5

1.5

1.4

0.4

0.5

0.4

0.3

0.5

1.3

0.4

0.3
0.4
0.5
1.3

solder landsolder land plus solder paste

occupied area

solder resist

Dimensions in mm
Issue date

12-11-23
13-03-06

sot1215_fr

Fig. 19. Reflow soldering footprint for DFN1010D-3 (SOT1215)
PBSS5160QA

Product data sheet

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60 V, 1 A PNP low VCEsat (BISS) transistor

14. Revision history
Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PBSS5160QA v.1

20130823

Product data sheet--

PBSS5160QA

Product data sheet

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60 V, 1 A PNP low VCEsat (BISS) transistor
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

15. Legal information
15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Document
status [1][2]Product
status [3]Objective[short] data
sheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] data
sheet

Qualification

This document contains data from thepreliminary specification.

Product[short] data
sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Definition

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.

15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in the
Product data sheet.

15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an information
source outside of Nexperia.

PBSS5160QA

Product data sheet

Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
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associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperia
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and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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agreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

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© Nexperia B.V. 2017. All rights reserved

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PBSS5160QA

Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

15.4 Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

PBSS5160QA

Product data sheet

All information provided in this document is subject to legal disclaimers.

23 August 2013

© Nexperia B.V. 2017. All rights reserved

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PBSS5160QA

Nexperia

60 V, 1 A PNP low VCEsat (BISS) transistor

16. Contents
1

General description ............................................... 1

2

Features and benefits ............................................1

3

Applications ........................................................... 1

4

Quick reference data ............................................. 1

5

Pinning information ............................................... 2

6

Ordering information ............................................. 2

7

Marking ................................................................... 2

8

Limiting values .......................................................3

9

Thermal characteristics .........................................4

10

Characteristics ....................................................... 7

11
11.1

Test information ................................................... 11
Quality information ............................................. 11

12

Package outline ................................................... 12

13

Soldering .............................................................. 13

14

Revision history ................................................... 14

15
15.1
15.2
15.3
15.4

Legal information .................................................15
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 23 August 2013

PBSS5160QA

Product data sheet

All information provided in this document is subject to legal disclaimers.

23 August 2013

© Nexperia B.V. 2017. All rights reserved

17 / 17