DISCRETE SEMICONDUCTORSDATA SHEET

M3D744

PMEG2010EV
Low VF MEGA Schottky barrier
diode
Product data sheet
Supersedes data of 2002 Jun 24

2003 Aug 20

NXP Semiconductors

Product data sheet

Low VF MEGA Schottky barrier diode
FEATURES

PMEG2010EV

PINNING• Forward current: 1 APIN

• Reverse voltage: 20 V

1cathode• Very low forward voltage2

cathode• Ultra small SMD package

3

anode

• Flat leads: excellent coplanarity and improved thermal
behaviour.

4

anode

5

cathode6cathode

DESCRIPTIONAPPLICATIONS• Low voltage rectification• High efficiency DC/DC conversion

handbook, halfpage
6• Switch mode power supply

54• Inverse polarity protection

1, 25, 6• Low power consumption applications.

3, 4
MHC310DESCRIPTION

1Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring forstress protection in a SOT666 ultra small SMD plasticpackage.

2

3

Marking code: F1.

Fig.1 Simplified outline (SOT666) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

−

20V−

1A−

8A

storage temperature−65+150°C

Tj

junction temperature−125°C

Tamboperating ambient temperature−65+125°C

VR

continuous reverse voltage

IF

continuous forward current

IFSM

non-repetitive peak forward current

Tstg

t = 8.3 ms half sinewave;
JEDEC method; note 1Note
1. Only valid if pins 3 and 4 are connected in parallel.

2003 Aug 202

NXP Semiconductors

Product data sheet

Low VF MEGA Schottky barrier diodePMEG2010EV

THERMAL CHARACTERISTICSSYMBOLRth j-aPARAMETERCONDITIONS

thermal resistance from junction to ambient

VALUEUNIT

note 1405

K/W

note 2215K/W

Notes
1. Refer to SOT666 standard mounting conditions.
2. Mounted on printed circuit-board, 1 cm2 copper area.
Soldering
The only recommended soldering method is reflow soldering.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF

IRCd

PARAMETER
continuous forward voltage

reverse current

diode capacitance

CONDITIONS

MAX.

UNIT

IF = 10 mA

240270mV

IF = 100 mA

300350mV

IF = 1 000 mA; note 1; see Fig.2

480550mV

VR = 5 V; note 2

510μA

VR = 8 V; note 2

720μA

VR = 15 V; note 2; see Fig.3

1050μA

VR = 5 V; f = 1 MHz; see Fig.4

1925pF

Notes
1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land.
2. Pulse test: tp = 300 μs; δ = 0.02.

2003 Aug 20TYP.

3

NXP Semiconductors

Product data sheet

Low VF MEGA Schottky barrier diodePMEG2010EV

GRAPHICAL DATAMHC311103
handbook, halfpage

MHC312105
handbook, halfpage
IR(μA)

IF(mA)(1)

104102(2)103(1)(2)(3)

10102(3)11010−100.2

0.4

VF (V)

10.6

05(1) Tamb = 125 °C.
(2) Tamb = 85 °C.

Fig.2

Fig.3

Forward current as a function of forward
voltage; typical values.

MHC31380Cd(pF)
60

40

20

05

1015VR (V)

20f = 1 MHz; Tamb = 25 °C.

Diode capacitance as a function of reverse
voltage; typical values.

2003 Aug 20

2025(3) Tamb = 25 °C.

handbook, halfpage

Fig.4

15VR (V)(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.

0104Reverse current as a function of reverse
voltage; typical values.

NXP Semiconductors

Product data sheet

Low VF MEGA Schottky barrier diodePMEG2010EV

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads

SOT666DEAX

Y SSHE654

pin 1 index
A12e1

bp

c3w M A

Lpe
detail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

bpcDEee1HE

Lpwymm

0.6
0.5

0.27
0.17

0.18
0.08

1.7
1.5

1.3
1.1

1.0

0.51.71.5

0.3
0.1

0.1

0.1

OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

ISSUE DATE
01-01-04
01-08-27

SOT666

2003 Aug 20

EUROPEAN
PROJECTION

5NXP Semiconductors

Product data sheet

Low VF MEGA Schottky barrier diodePMEG2010EV

DATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

DISCLAIMERS
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably beexpected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance orimplication of any license under any copyrights, patents orother industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)described herein may be subject to export control
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for thespecified use without further testing or modification.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions
above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

2003 Aug 20

6

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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes weremade to the content, except for the legal definitions and disclaimers.

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Printed in The Netherlands

613514/02/pp7

Date of release: 2003 Aug 20

Document order number: 9397 750 11684