TO-2

63-

7

NSF040120D7A01200 V, 40 mΩ, N-channel SiC MOSFET
14 May 2024

Product data sheet

1. General description
The NSF040120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon
temperature stability combined with its fast switching speed makes it a product of choice in highpower and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic
inverters and motor drives.

2. Features and benefits
•
•
•
•
•
•
•

Excellent RDSon temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature independent turn-off switching losses
Very fast and robust intrinsic body diodeFaster commutation and improved switching due to the additional Kelvin source pin

3. Applications
•
•
•
•
•

E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives

4. Quick reference data
Table 1. Quick reference data
SymbolParameter
VDS

drain-source voltage

VGS

gate-source voltage

IDdrain current

IDM

peak drain current

Conditions

Min

Typ

Max

Unit

-

-

1200

V

[1]

-10

-

22

V

Tc = 25 °C

[2]

-

-

65

A

Tc = 100 °C

[2]

-

-

46

A

pulsed; tp limited by Tj (max)

[3]

-

-

160

A

-

40

60

mΩ

Static characteristics
RDSon
[1]
[2]
[3]

drain-source on-state
resistance

VGS = 15 V; ID = 40 A; Tj = 25 °C

Recommended turn off gate voltage is -5 V to 0 V. Recommended turn on gate voltage is 15 V. Do not use with VGSon < 13 V.
Limited by the maximum values of Tj, Rth(j-c) and RDSon(Tj).
Designed value (not tested).

NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription

Simplified outline

1

G

gate

2

KS

kelvin source

3 to 7S

sourcemb

Dmounting base; connected
to drainGraphic symbol

mb

D

G
KS
aaa-036675
1

2

3

4

5

6

S

7

TO-263-7 (SOT8070-1)

6. Ordering information
Table 3. Ordering information
Type number
Package
NSF040120D7A0

Name

Description

VersionTO-263-7

plastic single-ended surface-mounted package; 7 leads

SOT8070-1

7. Marking
Table 4. Marking codes
Type number

Marking code

NSF040120D7A040120D7A0

NSF040120D7A0

Product data sheet

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Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

VDS

drain-source voltage

VGS

gate-source voltage

IDdrain current

Conditions

Min

Max

Unit

-

1200

V

[1]

-10

22

V

Tc = 25 °C

[2]

-

65

A

Tc = 100 °C

[2]

-

46

A

IDM

peak drain current

pulsed; tp limited by Tj (max)

[3]

-

160

A

Ptot

total power dissipation

Tc = 25 °C

[2]

-

306

W

Tj

junction temperature

-55

175

°C

Tstg

storage temperature

-55

150

°C

Tsld(M)

peak soldering
temperature

-

260

°C

Source-drain diodeIS

source current

Tc = 25 °C

[2]

-

54

A

ISM

peak source current

pulsed; limited by Tj (max)

[3]

-

120

A

[1]
[2]
[3]

Recommended turn off gate voltage is -5 V to 0 V. Recommended turn on gate voltage is 15 V. Do not use with VGSon < 13 V.
Limited by the maximum values of Tj, Rth(j-c) and RDSon(Tj).
Designed value (not tested).

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-c)Conditions

thermal resistance fromjunction to case

NSF040120D7A0

Product data sheet

All information provided in this document is subject to legal disclaimers.

14 May 2024

Min

Typ

Max

Unit

-

0.4

0.49

K/W

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

1200

-

-

V

Static characteristics
V(BR)DSS

drain-source
breakdown voltage

ID = 1 mA; VGS = 0 V; Tj = 25 °C

VGS(th)gate-source thresholdvoltage

ID = 4 mA; VDS = VGS; Tj = 25 °C

[1]

1.7

2.3

2.9

V

ID = 20 mA; VDS = VGS; Tj = 25 °C

[1]

-

2.77

-

V

IDSS

drain leakage current

VDS = 1200 V; VGS = 0 V; Tj = 25 °C

-

-

100

µA

IGSS

gate leakage current

VGS = 22 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

RDSon

drain-source on-state
resistance

VGS = 15 V; ID = 40 A; Tj = 25 °C

-

40

60

mΩ

VGS = 15 V; ID = 40 A; Tj = 175 °C

-

53

-

mΩ

VGS = 18 V; ID = 40 A; Tj = 25 °C

-

31

-

mΩ

VGS = 18 V; ID = 40 A; Tj = 175 °C

-

49

-

mΩ

VDS = 10 V; ID = 40 A; Tj = 25 °C

-

19

-

S

-

2.3

-

Ω

-

95

-

nC

-

40

-

nC

-

30

-

nC

-

2600

-

pF

-

136

-

pF

-

6

-

pF

-

21

-

ns

-

23

-

ns

gfs

forwardtransconductance

RG(int)internal gate resistance f = 0.5 MHz; Tj = 25 °C

Dynamic characteristics
QG(tot)total gate charge

QGSgate-source charge

QGD

gate-drain charge

Cissinput capacitanceCossoutput capacitanceCrssreverse transfer
capacitancetd(on)

turn-on delay timetrrise timetd(off)turn-off delay time

-

20

-

ns

tf

fall time

-

8

-

ns

Eon

turn-on switching loss

-

551

-

µJ

Eoff

turn-off switching loss

-

97

-

µJ

VDD = 800 V; ID = 40 A; VGS = -5/+15 V;
Tj = 25 °C
VDD = 800 V; f = 0.5 MHz; VGS = 0 V;
Tj = 25 °C

VDD = 800 V; ID = 40 A; RG(ext) = 2.2 Ω;
LL = 82 µH; VGS = -5/+15 V; Tj = 25 °C

Source-drain diodeVSD

source-drain voltage

IS = 40 A; VGS = -5 V; Tj = 25 °C

-

4.4

-

V

trr

reverse recovery time

8

-

ns

recovered charge

VDD = 800 V; IS = 40 A; dIS/dt = 6670 A/µs; VGS = -5 V; Tj = 25 °C

-

Qr

-

117

-

nC

[1]

Measured according to JEP183.

NSF040120D7A0

Product data sheet

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET
aaa-038172

160

20 V

ID
(A)

18 V

20 V

ID
(A)

15 V

120

aaa-038173

160

17 V

18 V
17 V

120

15 V
13 V

80

80

13 V

11 V
11 V

40

40

9V

9V
0

Fig. 1.

VGS = 7 V

VGS = 7 V
0

2

4

6

8

0

10
VDS (V)

0

2

4

6

8

10
VDS (V)Tj = 25 °C; tp = 100 µs

tp = 100 µs; Tj = 175 °C

Output characteristics: drain current as a
Fig. 2.
function of drain-source voltage; typical values

Output characteristics: drain current as afunction of drain-source voltage; typical values

aaa-038174

160

aaa-038175

70
RDSon
(m )
60

ID
(A)

ID = 60 A
40 A

120

50
40

20 A

80
Tj = 175 °C

30

Tj = 25 °C

20

40

10
0

0

5

10

15

VGS (V)

0-75

20

VDS = 10 V; tp = 100 µs
Fig. 3.

Product data sheet

25

75

125

Tj (°C)175

VGS = 15 V; tp = 100 µs

Transfer characteristics: drain current as afunction of gate-source voltage; typical values

NSF040120D7A0-25

Fig. 4.

Drain-source on-state resistance as a functionof junction temperature; typical values

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET
aaa-038176

0.5

aaa-038177

60

RDSon
( )

VGS = 15 V

RDSon
(m )

0.4

40
0.3

Tj = 175 °C

VGS = 18 V

Tj = 25 °C

0.2
20
0.1

0

0

5

10

15

VGS (V)020

ID = 20 A
Fig. 5.

5

25

45

65

ID (A)

85

Tj = 25 °C; tp = 100 µs

Drain-source on-state resistance as a functionof threshold voltage

Fig. 6.

aaa-038178-80

Drain-source on-state resistance as a functionof drain current; typical values
aaa-038179

-80

IS
(A)

IS
(A)

-60

VGS = 15 V

-60
VGS = 15 V
0V

-40

-40

-5 V

-20

0

-5 V

-20

0

-0.8

-1,6

-2.4

-3.2

-4.0

0

-4.8
-5.6
VDS (V)tp = 100 µs; Tj = 25 °C
Fig. 7.

0V

Product data sheet

-1.6

-3.2

VDS (V)-4.8

tp = 100 µs; Tj = 175 °C

Source current as a function of sourcedrain voltage; typical values (third quadrant
characteristics)

NSF040120D7A0

0

Fig. 8.

Source current as a function of sourcedrain voltage; typical values (third quadrant
characteristics)

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET
aaa-038899

3.5
VGS(th)(V)
3.0

aaa-038181

104
C
(pF)

Ciss

103

2.5

Coss
2.0
102
1.5
1.0

Crss

10

0.5
0
-60

-10

40

90

140

Tj (°C)

1
10-1

190

ID = 4 mA
Fig. 9.

1

102

10

VDS (V)103

f = 0.5 MHz; VGS = 0 V; Tj = 25 °C

Gate-source threshold voltage as a function ofjunction temperature; typical values

Fig. 10. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesaaa-038182

80
E
(µJ)

aaa-038183

15
VGS
(V)

60

10

40

5

20

0

0

0

200

400

600

-5

800
1000
VDS (V)

0

20

40

60

80
100
QG (nC)VDD = 800 V; ID = 40 A; Tj = 25 °C
Fig. 11. Coss stored energy as a function of drain-soucevoltage; typical values
Fig. 12. Gate-source voltage as a function of gatecharge; typical values

NSF040120D7A0

Product data sheet

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET
aaa-038900

1400
E
(µJ)
1200

aaa-038901

2000
E
(µJ)
1600

Eon

1000
Eon

1200

800
600

800

400
400

200
0

Eoff

Eoff
0

50

100

150

Tj (°C)

0200

VDD = 800 V; ID = 40 A; VGS = -5/15 V; RG, ext = 2.2Ω; LL = 82 µH
Fig. 13. Switching loss as a function of junction
temperature; typical values

40

60

80

ID (A)

100

Fig. 14. Switching loss as a function of drain current;
typical values
aaa-038903

160

td(on)

ts
(ns)

Eon

E
(µJ)

20

VDD = 800 V; VGS = -5/15 V; RG, ext = 2.2 Ω; LL = 82µH; Tj = 25 °C

aaa-038902

3000

0

120

2000
td(off)
80
tr
1000
40
Eoff

0

0

5

10

15

20

25

30

RG, ext ( )

tf
0

35

VDD = 800 V; ID = 40 A; VGS = -5/15 V; LL = 82 µH;
Tj = 25 °C
Fig. 15. Switching loss as a function of external gate
resistance; typical values

NSF040120D7A0

Product data sheet

0

10

20

30
40
RG, ext ( )VDD = 800 V; ID = 40 A; VGS = -5/15 V; LL = 82 µH;
Tj = 25 °C
Fig. 16. Switching times as a function of external gate
resistance; typical values

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET
aaa-038912

400

aaa-038913

70
ID
(A)
60

Ptot
(W)
300

50
40

200
30
20

100

10
0

25

75

125

Tc (°C)

0

175

25

75

125

Tc (°C)175

Fig. 17. Power dissipation derating as a function of case Fig. 18. Continuous drain current as a function of casetemperature; maximum values
temperature; maximum values
aaa-039239

200

aaa-038915

1

ID
(A)

Zth(j-c)
(K/W)

160

10-1

120

duty cycle = 1
0.50
0.20
0.10

0.05
0.02
0.01
10-2
0

80

40

0

0

200

400

600

800

1000

10-3
10-6

1200 1400
VDS (V)

VGS = -5/+18 V; Tc = 25 °C; Tj ≤ 175 °C; not for
linear use
Fig. 19. Reverse bias safe operating area (RBSOA)

NSF040120D7A0

Product data sheet

10-5

10-4

10-3

10-2

10-1
1
tp (s)

Fig. 20. Transient thermal impedance from junction tocase as a function of pulse duration; typicalvaluesAll information provided in this document is subject to legal disclaimers.

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

11. Test information
10% of VGS

90% of VDD

td(on)

VGStr

90% of VGS
VGS

VGS

ID
VDD

ID
VDD

ILoad

VDS

VDS
Eoff = ∫ V DS I D dt

10% of VDD

10% of ILoad

tf

VGS

ILoad
Eon = ∫ V DS I D dt

90% of VDD

td(off)

10% of VDD

aaa-039118

Fig. 21. Definition of switching times and losses during
channel turn-on

10% of ILoad
aaa-039119

Fig. 22. Definition of switching times and losses during
channel turn-off
Stray inductance LσStray inductance Lσ

RG(ext)LL

VGS

VGSoff

VDD

VDD
RG(ext)

DUT

DUT

VGS

VGSoffcurrent shunt

LL

current shuntaaa-039120

aaa-039121

Fig. 23. Test circuit for dynamic characterization ofchannel and gate charge characteristics

Fig. 24. Test circuit for dynamic characterization ofbody diodeIS

VGS
dIS/dt
trr

0
Irrm

VDS

VGSon

90% of Irrm
Qr = ∫ I Sdt
aaa-039122

VGSoffFig. 25. Definition of dynamic characteristics of body
diode

QGS

QGD

Q

QG(tot)aaa-039123

Fig. 26. Definition of gate charge characteristics

NSF040120D7A0

Product data sheet

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFETP

t2

duty cycle δ =

t1
t2

t1

t

006aaa812

Fig. 27. Duty cycle definition

NSF040120D7A0

Product data sheet

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NSF040120D7A0

Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

12. Package outline
TO-263-7: plastic single-ended surface-mounted package; 7 leads

SOT8070-1

θ (2×)

detail M

B

A1
ω
L3

L

B
ejector pin
mark Ø1.5 (3×)

A

E

E1
E4

c2

E2
β

L1

D3

D2
D1

D
H

D4

φ (3×)A2A
b3 (7×)e (6×)b (7×)

v

7

M

c

6

5

4

3

2

1

B A

e1

0

10 mm

θ

scale

7°
3°

Dimensions (mm are the original dimensions)
Unit(1)

A

A1

A2

b

b3

c

c2

D

D1

D2

D3

max 4.7 0.25 2.42 0.7 0.75 0.60 1.40 9.5 7.42 1.12mm nommin 4.3 0
2.02 0.5 0.60 0.45 1.25 9.1 6.86 0.72
Note
1. Dimensions D and E do not include mold flash.
2. All metal surfaces are tin-plated except trimmed area.
Outlineversion
SOT8070-1

D4

E

IEC

JEDEC

e1

7°
REF

13°
REF

H

L

E2

0.8 4.85 10.08

8.3

0.4 4.45

7.7

1.95 3.61 1.27 7.62 15.88 2.79
BSC BSC
1.55 3.21
14.61 1.78

References
JEITA

TO-263 (CB)compatible

e

β

E1

9.68

E4

ω

φ

v

8°

0.35

0°
L1

L3

1.6

0.25
BSC

-

sot8070-1_po

Europeanprojection

Issue date
24-01-26
24-05-13

Fig. 28. Package outline TO-263-7 (SOT8070-1)

NSF040120D7A0

Product data sheet

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Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

13. Soldering
Footprint information for reflow soldering of TO-263-7 package

SOT8070-1

11.00
10.20
8.3
3.85

2.0

(2×)

1.85
(2×)

0.250

1.70

1

(21×)

1.10

(21×)

0.65
2.1

(2×)

1.175
1.175

6.97

1.4
5.9

0.30

1.4
1.4

1.28
0.55

5.2

6.78

10.23

3.5

(7×)

1.80
1.6

(14×)

0.7

1.27

(14×)

0.250

(6×)

0.8

(7×)

recommended stencil thickness: 0.125 mm
occupied area

solder resist

solder landsolder paste(offset 0.075mm max. from Cu)

Dimensions in mm
Issue date

24-01-30
24-02-13

sot8070-1_fr

Fig. 29. Reflow soldering footprint for TO-263-7 (SOT8070-1)

NSF040120D7A0

Product data sheet

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1200 V, 40 mΩ, N-channel SiC MOSFET

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

NSF040120D7A0 v.3

20240514

Product data sheet-

NSF040120D7A0 v.2

Modifications:•

NSF040120D7A0 v.2

20240319

Preliminary data sheet-

NSF040120D7A0 v.1

NSF040120D7A0 v.1

20240131

Objective data sheet--

NSF040120D7A0

Product data sheet

Product status changed

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Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

15. Legal information

injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products insuch equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.

Data sheet status

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Document status[1][2]

Product
status [3]Definition

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outsideof Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-criticalsystems or equipment, nor in applications where failure or malfunctionof an Nexperia product can reasonably be expected to result in personal

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Product data sheet

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for thecustomer’s applications and products using Nexperia products in order toavoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement isconcluded only the terms and conditions of the respective agreement shallapply. Nexperia hereby expressly objects to applying the customer’s generalterms and conditions with regard to the purchase of Nexperia products bycustomer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, theproduct is not suitable for automotive use. It is neither qualified nor tested inaccordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

All information provided in this document is subject to legal disclaimers.

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Nexperia

1200 V, 40 mΩ, N-channel SiC MOSFET

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Test information........................................................ 10
12. Package outline........................................................ 12
13. Soldering................................................................... 13
14. Revision history........................................................14
15. Legal information......................................................15© Nexperia B.V. 2024. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 14 May 2024

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Product data sheet

All information provided in this document is subject to legal disclaimers.

14 May 2024

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