DISCRETE SEMICONDUCTORSDATA SHEET

M3D744

PBSS4240V
40 V low VCEsat NPN transistor
Product data sheet

2003 Jan 30

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4240VFEATURESQUICK REFERENCE DATA

• Low collector-emitter saturation voltage VCEsat

SYMBOL• High collector current capability IC and ICM

VCEO
IC

• High efficiency leading to reduced heat generation• Reduced printed-circuit board area requirements.
APPLICATIONSPINNING• High collector current gain (hFE) at high IC

PARAMETERMAX.

UNITcollector-emitter voltage40Vcollector current (DC)2AICRP

peak collector current

2ARCEsatequivalent on-resistance<190mΩ

• Power management:

PIN– DC-DC converter

1collector– Supply line switching

2collector– Battery charger

3base– LCD back lighting.

4emitter

5collector

6collector• Peripheral driver:– Driver in low supply voltage applications (e.g. lampsand LEDs)– Inductive load drivers (e.g. relay, buzzers andmotors).

handbook, halfpage

DESCRIPTION

65

4
1, 2, 5, 6DESCRIPTION
3NPN transistor providing low VCEsat and high current
capability in a SOT666 plastic package.
PNP complement: PBSS5240V.

41

MARKINGTYPE NUMBER
PBSS4240V

2003 Jan 30Top view

MARKING CODE

23MAM444

Fig.1 Simplified outline (SOT666) and symbol.

422NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4240V

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−40

V

VCEO

collector-emitter voltage

open base−

40

V

VEBO

emitter-base voltage

open collector−

5V

ICcollector current (DC)note 1−

2A

ICRP

repetitive peak collector current

note 2−

2A

ICM

peak collector current−3A

IBbase current (DC)−300mA

IBM

peak base current

−

1A

Ptot

total power dissipation

Tamb ≤ 25 °C; note 3−300mW

Tamb ≤ 25 °C; note 4−500mW

Tamb ≤ 25 °C; note 1−

900mW

Tamb ≤ 25 °C; notes 2 and 3−

1.2W

Tstg

storage temperature−65+150°C

Tj

junction temperature−150°C

Tamb

operating ambient temperature−65+150°CNotes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICSSYMBOLRth j-aPARAMETER
thermal resistance from junction toambient

CONDITIONS

VALUE

UNIT

note 1410

K/W

note 2215K/W

note 3

140K/W

notes 1 and 4

110

K/W

Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
3. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
The only recommended soldering method is reflow soldering.

2003 Jan 303

NXP SemiconductorsProduct data sheet

40 V low VCEsat NPN transistor

PBSS4240V

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO

PARAMETER
collector-base cut-off current

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCB = 40 V; IE = 0−−100nA

VCB = 40 V; IE = 0; Tamb = 150 °C−−50μA

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0−−100nA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0−−100nAhFE

DC current gain

VCE = 5 V; IC = 1 mA

300−−VCE = 5 V; IC = 500 mA300−900

VCE = 5 V; IC = 1 A200−−

VCE = 5 V; IC = 2 A; note 175−−

IC = 100 mA; IB = 1 mA−5075mV

IC = 500 mA; IB = 50 mA−70100mV

IC = 1 A; IB = 100 mA; note 1−150190mV

IC = 2 A; IB = 200 mA; note 1−300400mV

VCEsatcollector-emitter saturation voltage

RCEsatequivalent on-resistance

IC = 1 A; IB = 100 mA; note 1−150<190mΩ

VBEsatbase-emitter saturation voltage

IC = 1 A; IB = 100 mA−−1.2VVBEon

base-emitter turn-on voltage

VCE = 5 V; IC = 1 A−−

1.1V

fT

transition frequency

IC = 50 mA; VCE = 10 V;
f = 100 MHz

150−−MHzCc

collector capacitance

VCB = 10 V; IE = Ie = 0; f = 1 MHz−−

10pF

Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2003 Jan 30

4

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4240V

MHC471800

MHC472

1.2

handbook, halfpage

handbook, halfpage

hFEVBE(1)(V)

600(1)

0.8(2)(2)

400(3)

0.4(3)200010−1110102

010−1103
104
IC (mA)

1VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.

VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

(3) Tamb = 150 °C.

Fig.2

Fig.3

DC current gain as a function of collector
current; typical values.

MHC473103
handbook, halfpage

10102

103
104
IC (mA)

Base-emitter voltage as a function ofcollector current; typical values.

MHC474

1.2

handbook, halfpage

VBEsat(V)

VCEsat(mV)1(1)

0.8(2)

102(1)

0.6(2)
(3)

0.4

(3)

1010−11101020.2
10−1103
104
IC (mA)

IC/IB = 20.

1(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.

IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.

Fig.4

Fig.5

Collector-emitter saturation voltage as afunction of collector current; typical values.

2003 Jan 30

510102

103
104
IC (mA)

Base-emitter saturation voltage as afunction of collector current; typical values.

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4240V

MHC4752IC(A)MHC476103
handbook, halfpage

(1)
(2)
(3)

handbook, halfpage

RCEsat
(Ω)

(4)
(5)
(6)

1.6

102

(7)

1.2

(8)

10(9)
(10)

0.8

1
0.4

(1)

10−1
10−1

0
0.8

0.4

0

1.2

1.6
2
VCE (V)(2)(3)

110102

103
104
IC (mA)

Tamb = 25 °C.
(1)
(2)
(3)
(4)

IB = 3 mA.
IB = 2.7 mA.
IB = 2.4 mA.
IB = 2.1 mA.

(5)
(6)
(7)
(8)

IB = 1.8 mA.
IB = 1.5 mA.
IB = 1.2 mA.
IB = 0.9 mA.

(9) IB = 0.6 mA.
(10) IB = 0.3 mA.

IC/IB = 20.
(1) Tamb = 150 °C.

Fig.7
Fig.6Collector current as a function ofcollector-emitter voltage; typical values.

2003 Jan 30

6(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Collector-emitter equivalent on-resistanceas a function of collector current; typicalvalues.

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4240V

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads

SOT666

DEA

X

Y S

SHE

654

pin 1 index
A

12e1

bpc3w M ALpedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

Abpc

DEee1

HE

Lpw

y

mm

0.6
0.5

0.27
0.17

0.18
0.08

1.7
1.5

1.3
1.1

1.0

0.5

1.7
1.5

0.3
0.1

0.1

0.1

OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

ISSUE DATE
01-01-04
01-08-27

SOT666

2003 Jan 30

EUROPEAN
PROJECTION

7NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4240VDATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet atURL http://www.nxp.com.
DISCLAIMERS

above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

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products are sold subject to the general terms andconditions of commercial sale, as published at
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infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informationpublished in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents orother industrial or intellectual property rights.

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not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation orwarranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limitingvalues (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions

2003 Jan 308

NXP Semiconductors

Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes weremade to the content, except for the legal definitions and disclaimers.

Contact information
For additional information please visit: http://www.nxp.com
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands

613514/01/pp9

Date of release: 2003 Jan 30

Document order number: 9397 750 10782