S-808xxC Series
www.ablic.com
www.ablicinc.com

SUPER-SMALL PACKAGE HIGH-PRECISIONVOLTAGE DETECTOR© ABLIC Inc., 2001-2015

Rev.6.2_02

The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The
detection voltage is fixed internally with an accuracy of 2.0%. Two output forms, Nch open-drain and CMOS
output, are available. Super-low current consumption and miniature package lineup can meet demand from theportable device applications.

 Features Super-low current consumption

1.3 A typ. (detection voltage1.4 V, at VDD  1.5 V)
0.8 A typ. (detection voltage1.5 V, at VDD  3.5 V)
 High-precision detection voltage 2.0%
 Operating voltage range
0.65 V to 5.0 V (detection voltage1.4 V)
0.95 V to 10.0 V (detection voltage1.5 V)
 Hysteresis characteristics
5% typ.
 Detection voltage
0.8 V to 6.0 V (0.1 V step) Output form
Nch open-drain output (Active Low)
CMOS output (Active Low)
 Lead-free, Sn 100%, halogen-free*1*1. Refer to “ Product Name Structure” for details.

 Applications
 Battery checkers
 Power failure detectors
 Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remotecontrollers.
 Constant voltage power monitor for cameras, video equipments and communication devices.
 Power monitor for microcomputers and reset for CPUs.

 Packages
 SC-82AB
 SOT-23-5
 SOT-89-3
 SNT-4A
 TO-92

1

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Block Diagrams
1. Nch Open-drain Output Products
VDD

OUT



*1

*1

VREF
VSS

*1. Parasitic diodeFigure 1
2. CMOS Output Products
VDD
*1


*1

OUT


*1

VREF
VSS

*1. Parasitic diodeFigure 22

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request.
Refer to the “1. Product Name” for the construction of the product name, “2. Packages” regarding the
package drawings and “3. Product Name List” for the full product names.
1. Product Name
1-1. SC-82AB, SOT-23-5, SOT-89-3

S - 808xx

C

x

xx

-

xxx

T2

x
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)IC direction in tape specifications
Product code

*1

*2

Package code
NB: SC-82AB
MC: SOT-23-5
UA: SOT-89-3
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the Table 1 and 3 in the “3. Product Name List”
1-2. SNT-4A

S - 808xx

C

x

PF

-

xxx

TF

U
Environmental code
U: Lead-free (Sn 100%), halogen-free
IC direction in tape specifications*1
Product code

*2

Package code
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the Table 2 and 4 in the “3. Product Name List”

3

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

1-3. TO-92

S - 808xx

C

xY-x

2

-U
Environmental code
U: Lead-free (Sn 100%), halogen-freePacking form
B: Bulk
Z: Tape and ammo
Package code
Y: TO-92
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
15 to 60
(e.g. When the detection voltage is 1.5 V,
it is expressed as 15.)

2. Packages

Package name
SC-82AB

Package
NP004-A-P-SD

SOT-23-5MP005-A-P-SD
SOT-89-3
UP003-A-P-SD
SNT-4A
PF004-A-P-SD
TO-92 (Bulk)
YS003-D-P-SD
TO-92 (Tape and ammo) YZ003-E-P-SD

4

Tape
NP004-A-C-SD
NP004-A-C-S1
MP005-A-C-SD
UP003-A-C-SD
PF004-A-C-SD

YZ003-E-C-SD

Drawing code
Reel

ZigzagLand

NP004-A-R-SD



MP005-A-R-SD
UP003-A-R-SD
PF004-A-R-SD







YZ003-E-Z-SD


PF004-A-L-SD

Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

3. Product Name List
3-1. Nch Open-drain Output Products
Table 1 (1/2)
Detection
voltage range
0.8 V2.0 %0.9 V2.0 %1.0 V2.0 %1.1 V2.0 %1.2 V2.0 %1.3 V2.0 %1.4 V2.0 %1.5 V2.0 %1.6 V2.0 %1.7 V2.0 %1.8 V2.0 %1.9 V2.0 %2.0 V2.0 %2.1 V2.0 %2.2 V2.0 %2.3 V2.0 %2.4 V2.0 %2.4 V typ.
2.5 V2.0 %2.6 V2.0 %2.7 V2.0 %2.8 V2.0 %2.9 V2.0 %3.0 V2.0 %3.1 V2.0 %3.2 V2.0 %3.3 V2.0 %3.4 V2.0 %3.5 V2.0 %3.6 V2.0 %3.7 V2.0 %3.8 V2.0 %3.9 V2.0 %Hysteresis width(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V0.115 V
0.120 V4.4  0.1 V*1
0.125 V
0.130 V0.135 V
0.140 V0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V

SC-82AB

SOT-23-5

SOT-89-3

S-80808CNNB-B9MT2x
S-80809CNNB-B9NT2x
S-80810CNNB-B9OT2xS-80811CNNB-B9PT2x
S-80812CNNB-B9QT2x
S-80813CNNB-B9RT2x
S-80814CNNB-B9ST2x
S-80815CNNB-B8AT2x
S-80816CNNB-B8BT2x
S-80817CNNB-B8CT2x
S-80818CNNB-B8DT2x
S-80819CNNB-B8ET2x
S-80820CNNB-B8FT2xS-80821CNNB-B8GT2x
S-80822CNNB-B8HT2x
S-80823CNNB-B8IT2x
S-80824CNNB-B8JT2x
S-80825CNNB-B8KT2x
S-80826CNNB-B8LT2x
S-80827CNNB-B8MT2x
S-80828CNNB-B8NT2x
S-80829CNNB-B8OT2xS-80830CNNB-B8PT2x
S-80831CNNB-B8QT2xS-80832CNNB-B8RT2x
S-80833CNNB-B8ST2x
S-80834CNNB-B8TT2x
S-80835CNNB-B8UT2x
S-80836CNNB-B8VT2xS-80837CNNB-B8WT2x
S-80838CNNB-B8XT2x
S-80839CNNB-B8YT2x








S-80815CNMC-B8AT2x
S-80816CNMC-B8BT2x
S-80817CNMC-B8CT2x
S-80818CNMC-B8DT2x
S-80819CNMC-B8ET2x
S-80820CNMC-B8FT2xS-80821CNMC-B8GT2x
S-80822CNMC-B8HT2x
S-80823CNMC-B8IT2x
S-80824CNMC-B8JT2x
S-80825CNMC-B8KT2x
S-80826CNMC-B8LT2x
S-80827CNMC-B8MT2x
S-80828CNMC-B8NT2x
S-80829CNMC-B8OT2xS-80830CNMC-B8PT2x
S-80831CNMC-B8QT2xS-80832CNMC-B8RT2x
S-80833CNMC-B8ST2x
S-80834CNMC-B8TT2x
S-80835CNMC-B8UT2x
S-80836CNMC-B8VT2xS-80837CNMC-B8WT2x
S-80838CNMC-B8XT2x
S-80839CNMC-B8YT2x








S-80815CNUA-B8AT2x
S-80816CNUA-B8BT2x
S-80817CNUA-B8CT2x
S-80818CNUA-B8DT2x
S-80819CNUA-B8ET2x
S-80820CNUA-B8FT2xS-80821CNUA-B8GT2x
S-80822CNUA-B8HT2x
S-80823CNUA-B8IT2x
S-80824CNUA-B8JT2x
S-80824KNUA-D2BT2x*2
S-80825CNUA-B8KT2x
S-80826CNUA-B8LT2x
S-80827CNUA-B8MT2x
S-80828CNUA-B8NT2x
S-80829CNUA-B8OT2xS-80830CNUA-B8PT2x
S-80831CNUA-B8QT2xS-80832CNUA-B8RT2x
S-80833CNUA-B8ST2x
S-80834CNUA-B8TT2x
S-80835CNUA-B8UT2x
S-80836CNUA-B8VT2xS-80837CNUA-B8WT2x
S-80838CNUA-B8XT2x
S-80839CNUA-B8YT2x

5

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

Table 1 (2/2)
Detection
Hysteresis width
SC-82AB
SOT-23-5
SOT-89-3
voltage range(Typ.)
0.200 V
S-80840CNNB-B8ZT2xS-80840CNMC-B8ZT2xS-80840CNUA-B8ZT2x4.0 V2.0 %0.205 V
S-80841CNNB-B82T2x
S-80841CNMC-B82T2x
S-80841CNUA-B82T2x
4.1 V2.0 %0.210 V
S-80842CNNB-B83T2x
S-80842CNMC-B83T2x
S-80842CNUA-B83T2x
4.2 V2.0 %0.215 V
S-80843CNNB-B84T2x
S-80843CNMC-B84T2x
S-80843CNUA-B84T2x
4.3 V2.0 %0.220 V
S-80844CNNB-B85T2x
S-80844CNMC-B85T2x
S-80844CNUA-B85T2x
4.4 V2.0 %0.225 V
S-80845CNNB-B86T2x
S-80845CNMC-B86T2x
S-80845CNUA-B86T2x
4.5 V2.0 %0.230
VS-80846CNNB-B87T2x
S-80846CNMC-B87T2x
S-80846CNUA-B87T2x
4.6 V2.0 %0.10 V max.
S-80846KNUA-D2CT2x*3
4.6 V 0.10 V
0.235 V
S-80847CNNB-B88T2x
S-80847CNMC-B88T2x
S-80847CNUA-B88T2x
4.7 V2.0 %0.240 V
S-80848CNNB-B89T2x
S-80848CNMC-B89T2x
S-80848CNUA-B89T2x
4.8 V2.0 %0.245 V
S-80849CNNB-B9AT2x
S-80849CNMC-B9AT2x
S-80849CNUA-B9AT2x
4.9 V2.0 %0.250 V
S-80850CNNB-B9BT2x
S-80850CNMC-B9BT2x
S-80850CNUA-B9BT2x
5.0 V2.0 %0.255 V
S-80851CNNB-B9CT2x
S-80851CNMC-B9CT2x
S-80851CNUA-B9CT2x5.1 V2.0 %0.260 V
S-80852CNNB-B9DT2x
S-80852CNMC-B9DT2x
S-80852CNUA-B9DT2x
5.2 V2.0 %0.265 V
S-80853CNNB-B9ET2x
S-80853CNMC-B9ET2x
S-80853CNUA-B9ET2x5.3 V2.0 %0.270 V
S-80854CNNB-B9FT2xS-80854CNMC-B9FT2xS-80854CNUA-B9FT2x5.4 V2.0 %0.275 V
S-80855CNNB-B9GT2x
S-80855CNMC-B9GT2x
S-80855CNUA-B9GT2x
5.5 V2.0 %0.280 V
S-80856CNNB-B9HT2x
S-80856CNMC-B9HT2x
S-80856CNUA-B9HT2x
5.6 V2.0 %0.285 V
S-80857CNNB-B9IT2x
S-80857CNMC-B9IT2x
S-80857CNUA-B9IT2x5.7 V2.0 %0.290 V
S-80858CNNB-B9JT2x
S-80858CNMC-B9JT2x
S-80858CNUA-B9JT2x5.8 V2.0 %0.295 V
S-80859CNNB-B9KT2x
S-80859CNMC-B9KT2x
S-80859CNUA-B9KT2x5.9 V2.0 %0.300 V
S-80860CNNB-B9LT2x
S-80860CNMC-B9LT2x
S-80860CNUA-B9LT2x
6.0 V2.0 %*1. Describes the release voltage.
*2. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
*3. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.

6

Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 2 (1/2)

Detection
voltage range
0.8 V2.0 %0.9 V2.0 %1.0 V2.0 %1.1 V2.0 %1.2 V2.0 %1.3 V2.0 %1.4 V2.0 %1.5 V2.0 %1.6 V2.0 %1.7 V2.0 %1.8 V2.0 %1.9 V2.0 %2.0 V2.0 %2.1 V2.0 %2.2 V2.0 %2.3 V2.0 %2.4 V2.0 %2.4 V typ.
2.5 V2.0 %2.6 V2.0 %2.7 V2.0 %2.8 V2.0 %2.9 V2.0 %3.0 V2.0 %3.1 V2.0 %3.2 V2.0 %3.3 V2.0 %3.4 V2.0 %3.5 V2.0 %3.6 V2.0 %3.7 V2.0 %3.8 V2.0 %3.9 V2.0 %4.0 V2.0 %4.1 V2.0 %4.2 V2.0 %4.3 V2.0 %4.4 V2.0 %4.5 V2.0 %4.6 V2.0 %4.6 V0.10 V
4.7 V2.0 %4.8 V2.0 %4.9 V2.0 %5.0 V2.0 %5.1 V2.0 %Hysteresis width(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V0.115 V
0.120 V4.4  0.1 V*20.125 V
0.130 V0.135 V
0.140 V0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
0.225 V
0.230 V
0.10 V max.
0.235 V0.240 V
0.245 V
0.250 V
0.255 V

SNT-4A

TO-92*1

S-80808CNPF-B9MTFU
S-80809CNPF-B9NTFU
S-80810CNPF-B9OTFU
S-80811CNPF-B9PTFU
S-80812CNPF-B9QTFU
S-80813CNPF-B9RTFU
S-80814CNPF-B9STFU
S-80815CNPF-B8ATFU
S-80816CNPF-B8BTFU
S-80817CNPF-B8CTFU
S-80818CNPF-B8DTFU
S-80819CNPF-B8ETFU
S-80820CNPF-B8FTFU
S-80821CNPF-B8GTFU
S-80822CNPF-B8HTFU
S-80823CNPF-B8ITFU
S-80824CNPF-B8JTFU

S-80825CNPF-B8KTFU
S-80826CNPF-B8LTFU
S-80827CNPF-B8MTFU
S-80828CNPF-B8NTFU
S-80829CNPF-B8OTFU
S-80830CNPF-B8PTFU
S-80831CNPF-B8QTFU
S-80832CNPF-B8RTFU
S-80833CNPF-B8STFU
S-80834CNPF-B8TTFU
S-80835CNPF-B8UTFU
S-80836CNPF-B8VTFU
S-80837CNPF-B8WTFU
S-80838CNPF-B8XTFU
S-80839CNPF-B8YTFU
S-80840CNPF-B8ZTFU
S-80841CNPF-B82TFU
S-80842CNPF-B83TFU
S-80843CNPF-B84TFU
S-80844CNPF-B85TFU
S-80845CNPF-B86TFU
S-80846CNPF-B87TFU

S-80847CNPF-B88TFU
S-80848CNPF-B89TFU
S-80849CNPF-B9ATFU
S-80850CNPF-B9BTFU
S-80851CNPF-B9CTFU








S-80815CNY-n2-U
S-80816CNY-n2-U
S-80817CNY-n2-U
S-80818CNY-n2-U
S-80819CNY-n2-U
S-80820CNY-n2-U
S-80821CNY-n2-U
S-80822CNY-n2-U
S-80823CNY-n2-U
S-80824CNY-n2-U
S-80824KNY-n2-U*3
S-80825CNY-n2-U
S-80826CNY-n2-U
S-80827CNY-n2-U
S-80828CNY-n2-U
S-80829CNY-n2-U
S-80830CNY-n2-U
S-80831CNY-n2-U
S-80832CNY-n2-U
S-80833CNY-n2-U
S-80834CNY-n2-U
S-80835CNY-n2-U
S-80836CNY-n2-U
S-80837CNY-n2-U
S-80838CNY-n2-U
S-80839CNY-n2-U
S-80840CNY-n2-U
S-80841CNY-n2-U
S-80842CNY-n2-U
S-80843CNY-n2-U
S-80844CNY-n2-U
S-80845CNY-n2-U
S-80846CNY-n2-U
S-80846KNY-n2-U*4
S-80847CNY-n2-U
S-80848CNY-n2-U
S-80849CNY-n2-U
S-80850CNY-n2-U
S-80851CNY-n2-U

7

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

Table 2 (2/2)
Detection
Hysteresis width
SNT-4A
TO-92*1
voltage range(Typ.)
0.260 V
S-80852CNPF-B9DTFU
S-80852CNY-n2-U
5.2 V2.0 %0.265 V
S-80853CNPF-B9ETFU
S-80853CNY-n2-U
5.3 V2.0 %0.270 V
S-80854CNPF-B9FTFU
S-80854CNY-n2-U
5.4 V2.0 %0.275 V
S-80855CNPF-B9GTFU
S-80855CNY-n2-U
5.5 V2.0 %0.280 V
S-80856CNPF-B9HTFU
S-80856CNY-n2-U
5.6 V2.0 %0.285 V
S-80857CNPF-B9ITFU
S-80857CNY-n2-U
5.7 V2.0 %0.290 V
S-80858CNPF-B9JTFU
S-80858CNY-n2-U
5.8 V2.0 %0.295 V
S-80859CNPF-B9KTFU
S-80859CNY-n2-U
5.9 V2.0 %0.300 V
S-80860CNPF-B9LTFU
S-80860CNY-n2-U
6.0 V2.0 %*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
*4. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics.

8Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

3-2. CMOS Output Products
Table 3 (1/2)
Detection
voltage range
0.8 V2.0 %0.9 V2.0 %1.0 V2.0 %1.1 V2.0 %1.2 V2.0 %1.3 V2.0 %1.4 V2.0 %1.5 V2.0 %1.6 V2.0 %1.7 V2.0 %1.8 V2.0 %1.9 V2.0 %2.0 V2.0 %2.1 V2.0 %2.2 V2.0 %2.3 V2.0 %2.4 V2.0 %2.5 V2.0 %2.6 V2.0 %2.7 V2.0 %2.8 V2.0 %2.9 V2.0 %3.0 V2.0 %3.1 V2.0 %3.2 V2.0 %3.3 V2.0 %3.4 V2.0 %3.5 V2.0 %3.6 V2.0 %3.7 V2.0 %3.8 V2.0 %3.9 V2.0 %4.0 V2.0 %4.1 V2.0 %4.2 V2.0 %4.3 V2.0 %4.4 V2.0 %4.45 V typ.
4.5 V2.0 %4.6 V2.0 %4.7 V2.0 %4.8 V2.0 %4.9 V2.0 %5.0 V2.0 %5.1 V2.0 %Hysteresis width(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V0.115 V
0.120 V
0.125 V
0.130 V0.135 V
0.140 V0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V4.70 V max.*1
0.225 V
0.230 V
0.235 V0.240 V
0.245 V
0.250 V
0.255 V

SC-82AB

SOT-23-5

SOT-89-3

S-80808CLNB-B7MT2x
S-80809CLNB-B7NT2x
S-80810CLNB-B7OT2xS-80811CLNB-B7PT2x
S-80812CLNB-B7QT2xS-80813CLNB-B7RT2x
S-80814CLNB-B7ST2x
S-80815CLNB-B6AT2x
S-80816CLNB-B6BT2x
S-80817CLNB-B6CT2x
S-80818CLNB-B6DT2x
S-80819CLNB-B6ET2x
S-80820CLNB-B6FT2xS-80821CLNB-B6GT2x
S-80822CLNB-B6HT2x
S-80823CLNB-B6IT2x
S-80824CLNB-B6JT2x
S-80825CLNB-B6KT2x
S-80826CLNB-B6LT2x
S-80827CLNB-B6MT2x
S-80828CLNB-B6NT2x
S-80829CLNB-B6OT2xS-80830CLNB-B6PT2x
S-80831CLNB-B6QT2x
S-80832CLNB-B6RT2x
S-80833CLNB-B6ST2x
S-80834CLNB-B6TT2x
S-80835CLNB-B6UT2x
S-80836CLNB-B6VT2xS-80837CLNB-B6WT2x
S-80838CLNB-B6XT2x
S-80839CLNB-B6YT2xS-80840CLNB-B6ZT2xS-80841CLNB-B62T2x
S-80842CLNB-B63T2x
S-80843CLNB-B64T2x
S-80844CLNB-B65T2x
S-80845CLNB-B66T2x
S-80846CLNB-B67T2x
S-80847CLNB-B68T2x
S-80848CLNB-B69T2x
S-80849CLNB-B7AT2x
S-80850CLNB-B7BT2x
S-80851CLNB-B7CT2x








S-80815CLMC-B6AT2x
S-80816CLMC-B6BT2x
S-80817CLMC-B6CT2x
S-80818CLMC-B6DT2x
S-80819CLMC-B6ET2x
S-80820CLMC-B6FT2xS-80821CLMC-B6GT2x
S-80822CLMC-B6HT2x
S-80823CLMC-B6IT2x
S-80824CLMC-B6JT2x
S-80825CLMC-B6KT2x
S-80826CLMC-B6LT2x
S-80827CLMC-B6MT2x
S-80828CLMC-B6NT2x
S-80829CLMC-B6OT2xS-80830CLMC-B6PT2x
S-80831CLMC-B6QT2x
S-80832CLMC-B6RT2x
S-80833CLMC-B6ST2x
S-80834CLMC-B6TT2x
S-80835CLMC-B6UT2x
S-80836CLMC-B6VT2xS-80837CLMC-B6WT2x
S-80838CLMC-B6XT2x
S-80839CLMC-B6YT2xS-80840CLMC-B6ZT2xS-80841CLMC-B62T2x
S-80842CLMC-B63T2x
S-80843CLMC-B64T2x
S-80844CLMC-B65T2x
S-80845CLMC-B66T2x
S-80846CLMC-B67T2x
S-80847CLMC-B68T2x
S-80848CLMC-B69T2x
S-80849CLMC-B7AT2x
S-80850CLMC-B7BT2x
S-80851CLMC-B7CT2x








S-80815CLUA-B6AT2x
S-80816CLUA-B6BT2x
S-80817CLUA-B6CT2x
S-80818CLUA-B6DT2x
S-80819CLUA-B6ET2x
S-80820CLUA-B6FT2xS-80821CLUA-B6GT2x
S-80822CLUA-B6HT2x
S-80823CLUA-B6IT2x
S-80824CLUA-B6JT2x
S-80825CLUA-B6KT2x
S-80826CLUA-B6LT2x
S-80827CLUA-B6MT2x
S-80828CLUA-B6NT2x
S-80829CLUA-B6OT2xS-80830CLUA-B6PT2x
S-80831CLUA-B6QT2x
S-80832CLUA-B6RT2x
S-80833CLUA-B6ST2x
S-80834CLUA-B6TT2x
S-80835CLUA-B6UT2x
S-80836CLUA-B6VT2xS-80837CLUA-B6WT2x
S-80838CLUA-B6XT2x
S-80839CLUA-B6YT2xS-80840CLUA-B6ZT2xS-80841CLUA-B62T2x
S-80842CLUA-B63T2x
S-80843CLUA-B64T2x
S-80844CLUA-B65T2x
S-80844KLUA-D2AT2x*2
S-80845CLUA-B66T2x
S-80846CLUA-B67T2x
S-80847CLUA-B68T2x
S-80848CLUA-B69T2x
S-80849CLUA-B7AT2x
S-80850CLUA-B7BT2x
S-80851CLUA-B7CT2x

9SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

Table 3 (2/2)
Detection
Hysteresis width
SC-82AB
SOT-23-5
SOT-89-3
voltage range(Typ.)
0.260 V
S-80852CLNB-B7DT2x
S-80852CLMC-B7DT2x
S-80852CLUA-B7DT2x
5.2 V2.0 %0.265 V
S-80853CLNB-B7ET2x
S-80853CLMC-B7ET2x
S-80853CLUA-B7ET2x5.3 V2.0 %0.270 V
S-80854CLNB-B7FT2xS-80854CLMC-B7FT2xS-80854CLUA-B7FT2x5.4 V2.0 %0.275 V
S-80855CLNB-B7GT2x
S-80855CLMC-B7GT2x
S-80855CLUA-B7GT2x
5.5 V2.0 %0.280 V
S-80856CLNB-B7HT2x
S-80856CLMC-B7HT2x
S-80856CLUA-B7HT2x
5.6 V2.0 %0.285
VS-80857CLNB-B7IT2x
S-80857CLMC-B7IT2x
S-80857CLUA-B7IT2x5.7 V2.0 %0.290 V
S-80858CLNB-B7JT2x
S-80858CLMC-B7JT2x
S-80858CLUA-B7JT2x5.8 V2.0 %0.295 V
S-80859CLNB-B7KT2x
S-80859CLMC-B7KT2x
S-80859CLUA-B7KT2x5.9 V2.0 %0.300 V
S-80860CLNB-B7LT2x
S-80860CLMC-B7LT2x
S-80860CLUA-B7LT2x
6.0 V2.0 %*1. Describes the release voltage.
*2. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
Table 4 (1/2)
Detection
voltage range
0.8 V2.0 %0.9 V2.0 %1.0 V2.0 %1.1 V2.0 %1.2 V2.0 %1.3 V2.0 %1.4 V2.0 %1.5 V2.0 %1.6 V2.0 %1.7 V2.0 %1.8 V2.0 %1.9 V2.0 %2.0 V2.0 %2.1 V2.0 %2.2 V2.0 %2.3 V2.0 %2.4 V2.0 %2.5 V2.0 %2.6 V2.0 %2.7 V2.0 %2.8 V2.0 %2.9 V2.0 %3.0 V2.0 %3.1 V2.0 %3.2 V2.0 %3.3 V2.0 %3.4 V2.0 %3.5 V2.0 %3.6 V2.0 %3.7 V2.0 %3.8 V2.0 %10

Hysteresis width(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V0.115 V
0.120 V
0.125 V
0.130 V0.135 V
0.140 V0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V

SNT-4A

TO-92*1

S-80808CLPF-B7MTFU
S-80809CLPF-B7NTFU
S-80810CLPF-B7OTFU
S-80811CLPF-B7PTFU
S-80812CLPF-B7QTFU
S-80813CLPF-B7RTFU
S-80814CLPF-B7STFU
S-80815CLPF-B6ATFU
S-80816CLPF-B6BTFU
S-80817CLPF-B6CTFU
S-80818CLPF-B6DTFU
S-80819CLPF-B6ETFU
S-80820CLPF-B6FTFU
S-80821CLPF-B6GTFU
S-80822CLPF-B6HTFU
S-80823CLPF-B6ITFU
S-80824CLPF-B6JTFU
S-80825CLPF-B6KTFU
S-80826CLPF-B6LTFU
S-80827CLPF-B6MTFU
S-80828CLPF-B6NTFU
S-80829CLPF-B6OTFU
S-80830CLPF-B6PTFU
S-80831CLPF-B6QTFU
S-80832CLPF-B6RTFU
S-80833CLPF-B6STFU
S-80834CLPF-B6TTFU
S-80835CLPF-B6UTFU
S-80836CLPF-B6VTFU
S-80837CLPF-B6WTFU
S-80838CLPF-B6XTFU








S-80815CLY-n2-U
S-80816CLY-n2-U
S-80817CLY-n2-U
S-80818CLY-n2-U
S-80819CLY-n2-U
S-80820CLY-n2-U
S-80821CLY-n2-U
S-80822CLY-n2-U
S-80823CLY-n2-U
S-80824CLY-n2-U
S-80825CLY-n2-U
S-80826CLY-n2-U
S-80827CLY-n2-U
S-80828CLY-n2-U
S-80829CLY-n2-U
S-80830CLY-n2-U
S-80831CLY-n2-U
S-80832CLY-n2-U
S-80833CLY-n2-U
S-80834CLY-n2-U
S-80835CLY-n2-U
S-80836CLY-n2-U
S-80837CLY-n2-U
S-80838CLY-n2-U

Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 4 (2/2)

Detection
Hysteresis width
SNT-4A
TO-92*1
voltage range(Typ.)
0.195 V
S-80839CLPF-B6YTFU
S-80839CLY-n2-U
3.9 V2.0 %0.200 V
S-80840CLPF-B6ZTFU
S-80840CLY-n2-U
4.0 V2.0 %0.205 V
S-80841CLPF-B62TFU
S-80841CLY-n2-U
4.1 V2.0 %0.210 V
S-80842CLPF-B63TFU
S-80842CLY-n2-U
4.2 V2.0 %0.215 V
S-80843CLPF-B64TFU
S-80843CLY-n2-U
4.3 V2.0 %0.220 V
S-80844CLPF-B65TFU
S-80844CLY-n2-U
4.4 V2.0 %*24.45 V typ.
4.70 V max.
S-80844KLY-n2-U*3

0.225 V
S-80845CLPF-B66TFU
S-80845CLY-n2-U
4.5 V2.0 %0.230 V
S-80846CLPF-B67TFU
S-80846CLY-n2-U
4.6 V2.0 %0.235 V
S-80847CLPF-B68TFU
S-80847CLY-n2-U
4.7 V2.0 %0.240 V
S-80848CLPF-B69TFU
S-80848CLY-n2-U
4.8 V2.0 %0.245 V
S-80849CLPF-B7ATFU
S-80849CLY-n2-U
4.9 V2.0 %0.250 V
S-80850CLPF-B7BTFU
S-80850CLY-n2-U
5.0 V2.0 %0.255 V
S-80851CLPF-B7CTFU
S-80851CLY-n2-U
5.1 V2.0 %0.260 V
S-80852CLPF-B7DTFU
S-80852CLY-n2-U
5.2 V2.0 %0.265 V
S-80853CLPF-B7ETFU
S-80853CLY-n2-U
5.3 V2.0 %0.270 V
S-80854CLPF-B7FTFU
S-80854CLY-n2-U
5.4 V2.0 %0.275 V
S-80855CLPF-B7GTFU
S-80855CLY-n2-U
5.5 V2.0 %0.280 V
S-80856CLPF-B7HTFU
S-80856CLY-n2-U
5.6 V2.0 %0.285 V
S-80857CLPF-B7ITFU
S-80857CLY-n2-U
5.7 V2.0 %0.290 V
S-80858CLPF-B7JTFU
S-80858CLY-n2-U
5.8 V2.0 %0.295 V
S-80859CLPF-B7KTFU
S-80859CLY-n2-U
5.9 V2.0 %0.300 V
S-80860CLPF-B7LTFU
S-80860CLY-n2-U
6.0 V2.0 %*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics.

11

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Output Forms
1. Output Forms in S-808xxC Series
Table 5
Nch open-drain output products(Active Low)
“N” is the last letter of the product name.
e.g. S-80815CN

S-808xxC Series

CMOS output products(Active Low)
“L” is the last letter of the product name.
e.g. S-80815CL

2. Output Forms and Their Usage
Table 6
Usage

Nch open-drain output products CMOS output products(Active Low)
(Active Low)
Different power supplies
Yes
No
Active Low reset for CPUs
Yes
Yes
Active High reset for CPUs
No
No
Detection voltage change by resistor divider
YesNo Example for two power supplies
VDD1

VDD2

V/D
Nch
VSS

OUT

CPU

 Example for one power supply
VDD

VDD

V/D

CMOS OUT

CPU

VSS

VSS

Figure 3

12

V/D
Nch

OUT

CPU

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Pin Configurations
Table 7

SC-82ABTop view
4
3

1

Pin No.
SymbolDescription
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
NC*1
No connection
4
VSS
GND pin*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.

2

Figure 4
Table 8

SOT-23-5
Top view
51

Pin No.
SymbolDescription
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
VSS
GND pin4
NC*1
No connection
5
NC*1
No connection*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.

4

2

3

Figure 5
Table 9SOT-89-3
Top view

1

2

Pin No.
1
2
3

SymbolOUT
VDD
VSS

Description
Voltage detection output pin
Voltage input pin
GND pin3

Figure 6
Table10

SNT-4ATop view
1

4

2

3

Pin No.
SymbolDescription
1
OUT
Voltage detection output pin
2
VSS
GND pin3
NC*1
No connection
4
VDD
Voltage input pin*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.

Figure 7

13

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

TO-92
Bottom view
1 2 3

Figure 8

14

Rev.6.2_02

Table 11
Pin No.
1
2
3

SymbolOUT
VDD
VSS

Description
Voltage detection output pin
Voltage input pin
GND pinRev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

 Absolute Maximum Ratings
1. Detection Voltage Typ. 1.4 V or Less Products
Table 12Item
Power supply voltage
Output voltage Nch open-drain output products
CMOS output products
Output current
Power
SC-82ABdissipation
SNT-4A

Symbol
VDDVSS
VOUT
IOUT
PD

Operating ambient temperature
Topr
Storage temperature
Tstg*1. When mounted on board[Mounted board](1) Board size: 114.3 mm  76.2 mm  t1.6 mm(2) Board name: JEDEC STANDARD51-7(Ta  25 C unless otherwise specified)Absolute maximum ratings
Unit
7
V
V
VSS0.3 to VSS7
V
VSS0.3 to VDD0.3
50mA
150 (When not mounted on board) mW
350*1mW
140 (When not mounted on board) mW
300*1
mW
40 to 85C40 to 125
C

Power Dissipation PD (mW)

Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
500
400
SC-82AB

300
200
SNT-4A
100
0

0

50

100

150

Ambient Temperature Ta (C)

Figure 9 Power Dissipation of Package (When Mounted on Board)

15

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

2. Detection Voltage Typ. 1.5 V or More Products
Table 13
Item
Power supply voltage
Output voltage Nch open-drain output products
CMOS output products
Output current
Power
SC-82ABdissipation
SOT-23-5

Symbol
VDDVSS
VOUT
IOUT
PD

SOT-89-3
SNT-4A
TO-92
Operating ambient temperature
Topr
Storage temperature
Tstg*1. When mounted on board[Mounted board](1) Board size: 114.3 mm  76.2 mm  t1.6 mm(2) Board name: JEDEC STANDARD51-7(Ta  25 C unless otherwise specified)Absolute maximum ratings
Unit
12
V
V
VSS0.3 to VSS12V
VSS0.3 to VDD0.3
50mA
150 (When not mounted on board) mW
350*1
mW
250 (When not mounted on board) mW
600*1mW
500 (When not mounted on board) mW
1000*1mW
140 (When not mounted on board) mW
300*1
mW
400 (When not mounted on board) mW
800*1
mW
40 to 85C40 to 125
C

Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.

Power Dissipation PD (mW)

1200
SOT-89-3

1000

TO-92

800

SOT-23-5600

SC-82AB

400
200
0

SNT-4A
0

50

100

150

Ambient Temperature Ta (C)

Figure 10 Power Dissipation of Package (When Mounted on Board)

16

Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
Item

SymbolCondition

Detection voltage*1

VDET



Release voltage

VDET

Hysteresis width

VHYS

Current consumption

ISS

Operating voltage

VDD

Output current

IOUT

Leakage current

ILEAK

Response time

tPLH

S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
VDD  1.5 V
VDD  2.0 V

S-80808 to 09
S-80810 to 14

Output transistor,
Nch, VDS  0.5 V, VDD  0.7 V
Output transistor,
Nch, VDS  5.0 V, VDD  5.0 V(Ta  25 C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuitVDET(S) VDET(S) VDET(S)
V
1
0.98
1.02
V
1
0.802
0.834
0.867
V
1
0.910
0.944
0.979
V
1
1.017
1.054
1.091
V
1
1.125
1.164
1.203
V
1
1.232
1.273
1.315
V
1
1.340
1.383
1.427
V
1
1.448
1.493
1.538
V
1
0.018
0.034
0.051
V
1
0.028
0.044
0.061
V
1
0.037
0.054
0.071
V
1
0.047
0.064
0.081
V
1
0.056
0.073
0.091
V
1
0.066
0.083
0.101
V
1
0.076
0.093
0.110
1.3
3.5
2

A
1.3
3.5
2

A
0.65
5.0
V
1

0.04

0.2



mA

3





60

nA

3





60

s

1

Detection voltage  VDET
ppm/
temperature
1
Ta  40 to 85 C
100
350

C
*2

Ta


V
DET
coefficient*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of thedetection voltage range in Table 1 to 2.)*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
Ta   VDETTa
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient

17

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
Item

SymbolCondition

Detection voltage*1

VDET



Hysteresis width

VHYS



Current consumption

ISS

Operating voltage
Output current

VDD
IOUT

Leakage current

ILEAK

VDD  3.5 V
VDD  4.5 V
VDD  6.0 V
VDD  7.5 V

S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
Output transistor, VDD  1.2 V
Nch, VDS  0.5 V S-80815 to 60
VDD  2.4 V
S-80827 to 60
Output transistor,
Nch, VDS  10.0 V, VDD  10.0 V(Ta  25 C unless otherwise specified)
Test
Min.
Typ.
Max. Unit
circuitVDET(S) VDET(S) VDET(S)
V
1
0.98
1.02
VDET
VDET
VDET
V
1
0.03
0.05
0.08
0.8
2.4
2

A
2
0.8
2.4

A
2
0.9
2.7

A
2
0.9
2.7

A
0.95
10.0
V
1

0.59

1.36



mA

3

2.88

4.98



mA

3





100

nA

3

Response time
tPLH
60
1


s
Detection voltage  VDET
ppm/
1
temperature
Ta  40 to 85 C
100
350

C
Ta   VDET
coefficient*2*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of thedetection voltage range in Table 1 to 2.)*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
TaTa   VDET
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient18Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

2. CMOS Output Products
2-1. Detection Voltage Typ.1.4 V or Less Products
Table 16
Item

SymbolDetection voltage*1

VDET

Release voltage

VDET

Hysteresis width

VHYS

Current consumption

ISS

Operating voltage
Output current

VDD
IOUT

(Ta  25 C unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
circuitVDET(S) VDET(S) VDET(S)
V
1

0.98
1.02
S-80808
0.802
0.834
0.867
V
1
S-80809
0.910
0.944
0.979
V
1
S-80810
1.017
1.054
1.091
V
1
S-80811
1.125
1.164
1.203
V
1
S-80812
1.232
1.273
1.315
V
1
S-80813
1.340
1.383
1.427
V
1
S-80814
1.448
1.493
1.538
V
1
S-80808
0.018
0.034
0.051
V
1
S-80809
0.028
0.044
0.061
V
1
S-80810
0.037
0.054
0.071
V
1
S-80811
0.047
0.064
0.081
V
1
S-80812
0.056
0.073
0.091
V
1
S-80813
0.066
0.083
0.101
V
1
S-80814
0.076
0.093
0.110
V
1
S-80808 to 09
1.3
3.5
2

A
VDD  1.5 V
S-80810 to 14
1.3
3.5
2

A
VDD  2.0 V
0.65
5.0
V
1


Output transistor,
0.04
0.2
mA
3

Nch, VDS  0.5 V, VDD  0.7 V
Output transistor,
2.9
5.8
mA
4

Pch, VDS  2.1 V, VDD  4.5 V
60
1



s

Response time
tPLH
Detection voltage  VDET
ppm/
1
temperature
Ta  40 to 85 C
100
350

C
*2

Ta


V
DET
coefficient*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of thedetection voltage range in Table 3 to 4.)*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
Ta   VDETTa
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient

19

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

2-2. Detection Voltage Typ.1.5 V or More Products
Table 17
Item

SymbolCondition

Detection voltage*1

VDET



Hysteresis width

VHYS



Current consumption

ISS

Operating voltage
Output current

VDD
IOUT

VDD  3.5 V
VDD  4.5 V
VDD  6.0 V
VDD  7.5 V

S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
Output transistor, VDD  1.2 V
Nch, VDS  0.5 V S-80815 to 60
VDD  2.4 V
S-80827 to 60
Output transistor, VDD  4.8 V
Pch, VDS  0.5 V S-80815 to 39
VDD  6.0 V
S-80840 to 56
VDD  8.4 V
S-80857 to 60(Ta  25 C unless otherwise specified)
Test
Min.
Typ.
Max. Unit
circuitVDET(S) VDET(S) VDET(S)
V
1
0.98
1.02
VDET
VDET
VDET
V
1
0.03
0.05
0.08
0.8
2.4
2

A
0.8
2.4
2

A
0.9
2.7
2

A
0.9
2.7
2

A
0.95
10.0
V
1

0.59

1.36



mA

3

2.88

4.98



mA

3

1.43

2.39



mA

4

1.68

2.78



mA

4

2.08

3.42



mA

4

Response time
tPLH
60
1


s
Detection voltage  VDET
ppm/
1
temperature
Ta  40 to 85 C
100
350

°C
*2

Ta


V
DET
coefficient*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of thedetection voltage range in Table 3 to 4.)*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
TaTa   VDET
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient

20

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02
 Test Circuits
1.

VDD
VDD

S-808xxC
V*1

R
100 k

OUT

SeriesV
VSS*1. R is unnecessary for CMOS output products.
Figure 11
2.
A
VDD
VDD

S-808xxC

OUT

SeriesVSS

Figure 12
3.
VDD
VDD

S-808xxCV

OUTA

SeriesVSS

VDS

V

Figure 13
4.
VDS
VDD
VDD

S-808xxC
V

V
OUT
A

SeriesVSS

Figure 14

21

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Timing Chart
1. Nch Open-drain Output Products
VDD
Release voltage (VDET)
Detection voltage (VDET)Hysteresis width (VHYS)

Minimum operating voltage
VSS

OUT
VSS

VDD

R
100 kVDD

V

Output from the OUT pin
VSS

Figure 15
2. CMOS Output Products
VDD
Release voltage (VDET)
Detection voltage (VDET)Hysteresis width (VHYS)

Minimum operating voltage
VSS

VDD
OUT
VSS

VDD

V

Output from the OUT pin
VSSRemark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in theshaded region.
Figure 16

22

Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

 Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (VDET), the Nch transistor is
OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in(RB  RC)  VDD.
Figure 17 is OFF, the comparator input voltage isRA  RB  RC
1-2. When the VDD goes below VDET, the output provides the VDD level, as long as the VDD remains above
the detection voltage VDET. When the VDD falls below VDET (point A in Figure 18), the Nch transistor
becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time
the Nch transistor N1 in Figure 17 becomes ON, the comparator input voltage is changed toRB  VDD.
RA  RB
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the
VDD when the output is pulled up to the VDD.
1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still
appears even when the VDD surpasses VDET, as long as it does not exceed the release voltage VDET.
1-5. When the VDD rises above VDET (point B in Figure 18), the Nch transistor becomes OFF and the Pchtransistor becomes ON to provide VDD level at the output.
VDD
*1

RA

*1



Pch

OUT


*1

RB

Nch

VREF
VSS

RC

N1

*1. Parasiteic diodeFigure 17 Operation 1

23

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series(1)(2) (3)(4)
B

A

Hysteresis width (VHYS)

Rev.6.2_02(5)
VDD
Release voltage (VDET)
Detection voltage (VDET)
Minimum operating voltage
VSS

VDD
Output from the OUT pin
VSS

Figure 18 Operation 2
2. Other Characteristics
2-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 19 shows the temperature characteristics of the detection voltage.
VDET [V]
0.945 mV/CVDET25*1

0.945 mV/C
40

*1.

25

85

Ta [C]

VDET25 is an actual detection voltage value at 25°C.

Figure 19 Temperature Characteristics of Detection Voltage (Example for S-80827C)
2-2. Temperature Characteristics of Release Voltage
The temperature change  VDETof the release voltage is calculated by using the temperatureTa  VDETof the detection voltage as follows:Ta  VDET  VDET   VDETTa VDETTaThe temperature change of the release voltage and the detection voltage have the same signconsequently.
chnange24

Rev.6.2_02

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

2-3. Temperature Characteristics of Hysteresis Voltage
The temperature change of the hysteresis voltage is expressed as  VDET   VDETand is calculatedTaTa

as follows:  VDET   VDETVHYS   VDET



Ta
Ta
 VDET
Ta Standard Circuit
R*1
100 k

VDD
OUT
VSS

*1. R is unnecessary for CMOS output products.
Figure 20
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.

 Technical Terms
1. Detection Voltage (VDET), Release Voltage (VDET)The detection voltage (VDET) is a voltage at which the output turns to low. The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum(VDET) Min. and the maximum (VDET) Max. is called the detection voltage range (Refer to Figure 21).
Example: For the S-80815CN, the detection voltage lies in the range of 1.470(VDET)1.530.
This means that some S-80815CNs have 1.470 V for VDET and some have 1.530 V.
The release voltage (VDET) is a voltage at which the output turns to high. The release voltage varies slightly
among products of the same specification. The variation of release voltages between the specified
minimum (VDET) Min. and the maximum (VDET) Max. is called the release voltage range (Refer to Figure22). The range is calculed from the actual detection voltage (VDET) of a product and is expressed by
VDET1.03VDETVDET 1.08.
Example: For the S-80815CN, the release voltage lies in the range of 1.514(VDET)1.652.
This means that some S-80815CNs have 1.514 V for VDET and some have 1.652 V.

25

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

VDD

Detection voltage(VDET) Max.

Detection voltage range(VDET) Min.

Rev.6.2_02

VDD

Release voltage(VDET) Max.

Release voltage range(VDET) Min.

OUT

OUT

Figure 21 Detection Voltage (CMOS Output Products)

Figure 22 Release Voltage (CMOS Output Products)

Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,
VDET is always larger than VDET.
2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (Thevoltage at point B The voltage at point A VHYS in Figure 18). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and releaseof a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain
output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active
low product for example, the through-type current which is generated when the output goes from low to high(release) causes a voltage drop equal to [through-type current][input resistance] across the resistor. Whenthe input voltage drops below the detection voltage (VDET) as a result, the output voltage goes to low level.
In this state, the through-type current stops and its resultant voltage drop disappears, and the output goesfrom low to high. A through-type current is again generated, a voltage drop appears, and repeating theprocess finally induces oscillation.
VDD
RA
VIN

S-808xxCL

OUT

RB
VSS

Figure 23 An Example for Bad Implementation of Input Voltage Divider

26

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2x, S-80824KNY-n2-U
Table 18
Item

Symbol*1

Detection voltage
Release voltage
Current consumption
Operating voltage
Output current

VDET
VDET
ISS
VDD
IOUT

Leakage current

ILEAK(Ta  25 C unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
circuit2.295 2.400*2 2.505
V
1

4.300
4.400 4.500
V
1

0.8
2.4
2

A
VDD6.0 V
0.95
10.0
V
1


0.24
mA
3

Output transistor, VDD  0.95 V 0.03
Nch, VDS  0.5 V VDD  1.2 V
0.23
0.50
mA
3

Output transistor,
0.1
3


A
Nch, VDD  10.0 V, VDS  10.0 V
60
1



s

Response time
tPLH
Detection voltage  VDET
1
temperature
Ta  40 to 85 °C
100
350 ppm/°CTa   VDET
coefficient*3*1. VDET: Actual detection voltage value*2. Specified detection voltage value (VDET(S))*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
TaTa   VDET
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient

27

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

2. S-80844KLUA-D2AT2x, S-80844KLY-n2-U
Table 19
Item

Symbol*1

Detection voltage
Release voltage
Current consumption
Operating voltage
Output current

VDET
VDET
ISS
VDD
IOUT

(Ta  25 C unless otherwise specified)
TestCondition
Min.
Typ.
Max.
Unit
circuit
4.295 4.450*2 4.605
V
1

4.700
V
1



1.0
3.0
2

A
VDD  6.0 V
0.95
10.0
V
1


0.50
mA
3

Output transistor, VDD  1.2 V 0.23
Nch, VDS  0.5 V VDD  2.4 V 1.60
3.70
mA
3

Output transistor,
0.62
mA
4

VDD  4.8 V 0.36
Pch, VDS  0.5 V
60
1



s

Response time
tPLH
Detection voltage  VDET
1
temperature
Ta  40 to 85 °C
100
350 ppm/°CTa   VDET
coefficient*3*1. VDET: Actual detection voltage value*2. Specified detection voltage value (VDET(S))*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
TaTa   VDET
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient28

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

3. S-80846KNUA-D2CT2x, S-80846KNY-n2-U
Table 20
Item

SymbolCondition

Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current

VDET
VHYS
ISS
VDD
IOUT

Leakage current

ILEAK

Response time
Detection voltage
temperature
coefficient*3

tPLH
  VDETTa   VDET
VDD  6.0 V
Output transistor, VDD  1.2 V
Nch, VDS  0.5 V VDD  2.4 V
Output transistor,
Nch, VDD  10.0 V, VDS  10.0 V*1Ta  40 to 85 °C(Ta  25 C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit*2
4.500 4.600
4.700
V
1
0.05
0.10
V
1

0.9
2.7
2

A
0.95
10.0
V
1

0.59
1.36
mA
3

2.88
4.98
mA
3





0.1

A

3





60

s

1



100

350

ppm/°C1*1. VDET: Actual detection voltage value*2. Specified detection voltage value (VDET(S))*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
  VDET
mV/ C*1   VDET(S) Typ. V *2    VDET ppm/ C*3  1000
Ta   VDETTa
*1. Temperature change of the detection voltage*2. Specified detection voltage*3. Detection voltage temperature coefficient Precautions
 Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
 In CMOS output products of the S-808xxC series, the through-type current flows at the detection and therelease. If the input impedance is high, oscillation may occur due to the voltage drop by the through-typecurrent during releasing.
 In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of thepower supply voltage (VDD) is slow near the detection voltage.
 When designing for mass production using an application circuit described herein, the product deviation andtemperature characteristics should be taken into consideration. ABLIC Inc. shall not bear any responsibility
for the products on the circuits described herein.
 ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any
infringement of the products including this IC upon patents owned by a third party.

29

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

 Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)S-80808CL

S-80814CL

0.90

1.55

+VDET

1.50

+VDET

1.45

VDET (V)VDET (V)

0.85

1.40

-VDET

1.35

0.80

-VDET

1.30
1.25

0.75
-40

-20

0

20

Ta (°C)

40

60

-40

80

S-80815CL

-20

0

20

40

60

80

20

40

60

80

20

40

60

80

40

60

80

Ta (°C)S-80860CL

1.60

6.40
6.30

+VDET
VDET (V)VDET (V)

1.55

1.50

-VDET

+VDET

6.20
6.10
6.00

-VDET

5.90
5.80

1.45
-40

-20

0

20

Ta (°C)

40

60

-40

80

-20

0

-20

0

Ta (°C)

2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)S-80814CL
8.0

7.0

7.0

6.0

6.0

VHYS (%)

V HYS (%)

S-80808CL
8.0

5.0
4.0
3.0
-40

5.0
4.0
3.0

-20

0

20
40
Ta (°C)

60

80

-40

Ta (°C)S-80815CL
8.0

S-80860CL
8.0
7.0

6.0

VHYS (%)

V HYS (%)

7.0

5.0
4.0
3.0
-40

30

6.0
5.0
4.0
3.0

-20

0

20
40
Ta (°C)

60

80

-40

-20

0

20

Ta (°C)SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

3. Current Consumption (ISS) - Input Voltage (VDD)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

Ta=25°C

S-80814CL

9.3 AISS (A)

ISS (A)

S-80808CL

0

1.0

2.0

3.0

4.0

5.0

Ta=25°C

4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

21.5 A

6.0

0

1.0

2.0

VDD (V)

Ta=25°C
4.7 A

0

2.0

4.0

6.0

8.0

10.0

6.0

12.8 A0

12.0

4. Current Consumption (ISS) - Temperature (Ta)S-80808CL

VDD1.5 V

2.0

2.0

4.0

6.0

VDD (V)

8.0

S-80814CL

10.0

12.0

VDD2.0 V

2.0
1.5

ISS (A)

1.5

ISS (A)

5.0

Ta=25°C

1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0

VDD (V)

1.0
0.5
0.0

1.0
0.5
0.0

-40

-20

0

20

40

60

80

-40

Ta (°C)
VDD3.5 V

S-80815CL
2.0

-20

0

20

Ta (°C)40

S-80860CL

60

80

VDD7.5 V

2.0

1.5

1.5

ISS (A)

ISS (A)

4.0

S-80860CL

ISS (A)

ISS (A)

S-80815CL
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0

3.0

VDD (V)

1.0
0.5
0.0
-40

-20

0

20

Ta (°C)

40

60

80

1.0
0.5
0.0
-40

-20

0

20

Ta (°C)

40

60

80

31

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

5. Nch Transistor Output Current (IOUT) – VDS
S-80814CL/CN
5.0

Ta=25°C
VDD1.3 V

4.0
3.0

VDD1.0

2.0
1.0

Ta=25°C
6.0 V

40
IOUT (mA)

IOUT (mA)

S-80860CL/CN50

VDD0.7 V

0

4.8 V

30

3.6 V

20
2.4 V

10

VDD1.2 V

0

0

0.5

1.0
1.5
VDS (V)

2.0

2.5

0

1.0

2.0
3.0
VDS (V)

4.0

5.0

6. Pch Transistor Output Current (IOUT) -VDS
Ta=25ºC

4.0

VDD2.9V

3.0

VDD2.4V

2.0

VDD1.9 V

1.0
0

0.5

Ta=25ºC
8.4 V

25

VDD1.4 V

VDD0.9 V

0S-80815CL
30
IOUT (mA)

IOUT (mA)

S-80808CL
5.0

20

7.2 V
6.0 V

15

4.8 V
3.6 V

10
5

VDD2.4 V

0

1.0
1.5
VDS (V)

2.0

0

2.5

2.0

4.0
6.0
VDS (V)

8.0

10.0

7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80814CL/CN

VDS0.5 V

6.0

S-80860CL/CN20

VDS0.5 V

Ta=-40°C

Ta=-40°C
15

Ta=25°C

IOUT (mA)

IOUT (mA)

4.5
3.0
1.5
Ta=85°
0
0

0.5

1.0
VDD (V)

1.5

Ta=25°C
105

Ta=85°C

0

2.0

0

2.0

4.0
VDD (V)

6.0

8.0

8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80808CL

VDS0.5 V

3.0

IOUT (mA)

IOUT (mA)

Ta=25°C

1.0

Ta=85°C

1.0

2.0

3.0

VDD (V)

32

4.0

5.0

4

Ta=25°C

3
2

Ta=85°C1

00

Ta=-40°C

5

1.5

0.5

VDS0.5 V

6

Ta=-40°C

2.5
2.0

S-80815CL

6.0

0
0

2.0

4.0

6.0

VDD (V)

8.0

10.0

12.0

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

9. Minimum Operating Voltage - Input Voltage (VDD)
S-80808CN

Pull-up to VDD 100 k

4.0

0.9

3.0

VOUT (V)

Ta=-40°C

VOUT (V)S-80808CN

1.2

0.6
Ta=25°C
0.3

Ta=85°C

0.0
0.0

0.2

0.4

0.6

Pull-up to VDD 100 k

Ta=85°C
1.0

0.2

4.0

1.5

3.0

VOUT (V)VOUT (V)

Ta=-40°C
Ta=25°C

0.5

Ta=85°C

0.0
0

0.5

1.0

VDD (V)

S-80808CN

2.0

Pull-up to VDD :100 k

0.65
0.60

1.5

Ta=-40°C

0.4

0.6

0.8

VDD (V)

S-80815CN

2.0

1.0

Ta=25°C

2.0

VDD (V)
S-80815CN

Ta=-40°C

0.0

1.0

0.8

Pull-up to 3 V

1.0

Pull-up to 3 V
Ta=-40°C
Ta=25°C

2.0

Ta=85°C
1.0
0.0
0

0.5

1.0

VDD (V)

1.5

2.0

VOUT(V)
PULL-UPVDDmin (V)

0.55
0.50

PULL-UP0.1

0.45
0.40

Ta=25°C

0.35

Ta=85°C

0.30
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

PULL-UP (V)S-80815CN
0.75
0.70

Pull-up to VDD :100 k

0
VDDminVDD(V)

Remark VDDmin. is defined by the VDD voltage at
which VOUT goes below 10 of
PULL-UP voltage when the VDD
increase from 0 V.
Figure 24

Ta=-40°C

VDDmin (V)

0.65
0.60
0.55
0.50
0.45

Ta=85°C
Ta=25°C

0.40
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0

PULL-UP (V)33

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

S-80808CL
Response time (ms)1

Ta=25°C

S-80808CN

tpLH

Resopnse time (ms)

10. Dynamic Response - COUT

tpHL
0.1

0.01

0.001
0.00001

0.0001

0.001

0.01

0.1

0.01
tpLH
0.0001

0.001

0.01

0.01
tpLH
0.001

0.01

Load Capacitance (F)34

Respone time (ms)Response time (ms)

tpLH

0.01

tpHL
0.01

0.0001

0.001

0.01

0.1

Ta=25°C
tpLH

10
1
0.1

tpHL
0.01

0.0001

0.001

0.01

0.1

Ta=25°C

100

0.01

0.001

0.1

S-80860CN

0.1

0.0001tpLH

Load Capacitance (F)

tpHL

0.001
0.00001

Ta=25°C

10.001
0.00001

0.1

Ta=25°C

1

0.1

100

Load Capacitance (F)
S-80860CL

0.01

S-80815CN
Response time (ms)Response time (ms)0.1

0.00010.001

Load Capacitance (F)

tpHL

0.001
0.00001

0.000110

0.001
0.00001

0.1

Ta=25°C

1

tpHL
0.01

100

Load capacitanse (F)
S-80815CL

0.1

S-80814CN
Response time (ms)Response time (ms)

tpHL

0.001
0.00001

1

Load capacitance (F)

Ta=25°C

1

tpLH

10

0.001
0.00001

0.1

Load capacitance (F)

S-80814CL

Ta=25°C

100

0.1

tpLH

10
1
0.1

tpHL

0.01
0.001
0.00001

0.0001

0.001

0.01

Load Capacitance (F)

0.1

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

1 s

1 s

VIH

VDD

Input voltagae

V

VIL

tpHL

VDD
S-808xxC OUT
Series
COUT
VSS

tpLH

VDD

VDD90 %Output voltage*1R
100 k

V*1. R is unnecessary for CMOS output products.

VDD10 %VIH10 V, VIL0.95 V
Figure 25 Measurement Condition for Response Time

Figure 26 Measurement Circuit for Response Time

Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.

 Application Circuit Examples
1. Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may
be performed or the contents of the memory register may be lost. When power supply voltage returns tonormal, the microcomputer needs to be initialized before normal operations can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.
Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-808xxC series,that has low operating voltage, a high-precision detection voltage and hysteresis.
VDD1

VDD2

VDD
S808xxCL

S808xxCN

Microcomputer

Microcomputer
VSS

VSS(Only for Nch open-drain products)

Figure 27 Reset Circuit Example(S-808xxCL)

Figure 28 Reset Circuit Example (S-808xxCN)

Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.

35

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

2. Power-on Reset Circuit
A power-on reset circuit can be constructed using Nch open-drain output product of S-808C Series.
VDD
Di

*1

R

VIN

(R75 k)*2

S808xxCN

OUT(Nch open-drain products)

C
VSS*1. Resistor R should be 75 k or less to prevent oscillation.
*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at thepower falling,Di can be removed when the delay of the falling time is not important.
Figure 29

VDD
(V)

OUT
(V)

t (s)

t (s)

Figure 30
Remark When the power rises sharply as shown in the Figure 31 left, the output may goes to the high level
for an instant in the undefined region where the output voltage is undefined since the power
voltage is less than the minimum operation voltage.

VDD
(V)

OUT
(V)

t (s)

t (s)

Figure 31

36

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series

Rev.6.2_02

3. Change of Detection Voltage
In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using
resistance dividers or diodes as shown in Figures 32 to 33. In Figure 32, hysteresis width also changes.
VDD

VDD
RA

Vf1

*1

(RA75 k)RB

S808xxCN

VIN

Vf2
OUT

VIN

S808xxCN




OUT

(Nch open-drain
output product)(Nch open-drain
output products)

VSS

VSS

RA  RB
  VDETRB
RA  RB
Hysterisis width  VHYSRB

Detection voltagae 

Detection voltage=Vf1+Vf2+(VDET)*1. RA should be 75 k or less to prevent oscillation.
Caution If RA and RB are large, the hysteresis
width may aloso be larger than thevalue given by the above equation due
to the through-type current (whichflows slightly in an Nch open-drain
product).
Figure 32

Figure 33

Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.

372.0±0.2
1.3±0.2

4

3

0.05

+0.1
0.3 -0.05+0.1

0.16 -0.06

2

1

+0.1

0.4 -0.05

No. NP004-A-P-SD-2.0

TITLE

SC82AB-A-PKG Dimensions

No.

NP004-A-P-SD-2.0

ANGLE
UNIT

mm

ABLIC Inc.

+0.1

ø1.5 -0

4.0±0.1

2.0±0.05

1.1±0.1

4.0±0.1

0.2±0.05

ø1.05±0.1(0.7)

2.2±0.2

2

1

3

4

Feed direction

No. NP004-A-C-SD-3.0

TITLE

SC82AB-A-Carrier Tape

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NP004-A-C-SD-3.0

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ABLIC Inc.

4.0±0.1

2.0±0.1

1.1±0.1+0.1
ø1.5 -0

4.0±0.1

0.2±0.05

ø1.05±0.1

2.3±0.15

2

1

3

4

Feed direction

No. NP004-A-C-S1-2.0

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Enlarged drawing in the central part

ø13±0.2

(60°)

(60°)

No. NP004-A-R-SD-1.1

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NP004-A-R-SD-1.1
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ANGLE
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ABLIC Inc.

3,000

2.9±0.2
1.9±0.2
4

5

1

2

+0.1

0.16 -0.06

30.95±0.1
0.4±0.1

No. MP005-A-P-SD-1.3

TITLE

SOT235-A-PKG Dimensions

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MP005-A-P-SD-1.3

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ABLIC Inc.

4.0±0.1(10 pitches:40.0±0.2)+0.1

ø1.5 -0+0.2

ø1.0 -0

2.0±0.05

0.25±0.1

4.0±0.1

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12.5max.

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Enlarged drawing in the central part
ø13±0.2

(60°)

(60°)

No. MP005-A-R-SD-1.1

TITLE

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No.

MP005-A-R-SD-1.1

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UNIT

mm

ABLIC Inc.

3,000

4.5±0.1

1.5±0.1

1.6±0.2

45°

1

2

3

1.5±0.1 1.5±0.1

0.4±0.05

0.4±0.1

0.4±0.1
0.45±0.1

No. UP003-A-P-SD-2.0

TITLE

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No.

UP003-A-P-SD-2.0

ANGLE
UNIT

mm

ABLIC Inc.

4.0±0.1(10 pitches : 40.0±0.2)+0.1

ø1.5 -0

2.0±0.05

ø1.5 +0.1-0

0.3±0.05

8.0±0.1

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4.75±0.1

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Enlarged drawing in the central part

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(60°)

No. UP003-A-R-SD-1.1

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mm

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1,000

1.2±0.04
3

4

+0.05
0.08 -0.02

2

1

0.65
0.48±0.02

0.2±0.05

No. PF004-A-P-SD-6.0

TITLE

SNT-4A-A-PKG Dimensions

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PF004-A-P-SD-6.0

ANGLE
UNIT

mm

ABLIC Inc.

+0.1

ø1.5 -0

4.0±0.1

2.0±0.05

0.25±0.05+0.1

1.45±0.1

2

1

3

4

ø0.5 -0

4.0±0.1

0.65±0.05

Feed direction

No. PF004-A-C-SD-2.0

TITLE

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Enlarged drawing in the central part
ø13±0.2

(60°)

(60°)

No. PF004-A-R-SD-1.0

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1.16

2

0.52

0.35

1.
2.

0.3

1

(0.25 mm min. / 0.30 mm typ.)(1.10 mm ~ 1.20 mm)
0.03 mm

1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.

(0.25 mm min. / 0.30 mm typ.)(1.10 mm ~ 1.20 mm)

No. PF004-A-L-SD-4.1

TITLE

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No.

PF004-A-L-SD-4.1

ANGLE
UNIT

mm

ABLIC Inc.

4.2max.

5.2max.

Marked side

0.6max.

0.45±0.1

0.45±0.1

1.27

No. YS003-D-P-SD-2.1

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5.2max.

4.2max.

Marked side

0.6max.

0.45±0.1
0.45±0.1+0.4

2.5 -0.1

1.27

No. YZ003-E-P-SD-2.1

TITLE

TO92-E-PKG Dimensions

No.

YZ003-E-P-SD-2.1

ANGLE
UNIT

mm

ABLIC Inc.

12.7±1.0

1.0max.

1.0max.

1.0max.
Marked side

1#pin

3#pin
1.45max.
0.7±0.2

ø4.0±0.2

6.35±0.4

12.7±0.3(20 pitches : 254.0±1.0)

Z typeFeed direction

No. YZ003-E-C-SD-1.1

TITLE

TO92-E-Radial TapeNo.

YZ003-E-C-SD-1.1

ANGLE
UNIT

mm

ABLIC Inc.

Spacer(Sponge)

312

18

35

Side spacer placed in front side

154

314

Space more than 4 strokes

162

333

43

No. YZ003-E-Z-SD-2.0

TITLE

TO92-E-Ammo Packing

No.

YZ003-E-Z-SD-2.0

ANGLE

QTY.

UNIT

mm

ABLIC Inc.

2,000

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information describedherein.

4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due tothe use of the products outside their specified ranges.

5.

Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.

6.

When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-relatedlaws, and follow the required procedures.

7.

The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,biological or chemical weapons or missiles, or use any other military purposes.

8.

The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.

9.

In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products areallowed to apply for the system on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of thisdocument described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07

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