＜Multi-Function Transistor＞

RT8Ｈ012Ｃ
Bipolar voltage detector

2.90.95 0.95

DESCRIPTIONPIN CONFIGURATION
RT8H012C is a NPN transistor, a PNP transistor, andthe compound transistor constituted by resistance.
A circuit designed for detecting input voltage and resetting system.

⑥②⑤③④0〜0.1

0.13

0.4

①

1.1
0.6

FEATURE● The miniaturization of a set and high-density mounting
are possible.
● Wide supply voltage range. （2V〜36V）● A detection voltage setup is possible by external resistance.
● A delay time setup is possible by external capacity.
● "L" reset output of open collector.

Unit：ｍｍ

2.8
1.6

APPLICATION
Reset of logic circuit.
Over voltage protection circuit.

654012
１23Out line
①VS②C
③RP
④OUT
⑤GND
⑥VCC

BLOCK DIAGRAM
RPVCC

OUT
VSdelay

GND

C

Notes ： The external resistance for an output capability setup needs to be connected for RP terminal.

041007（１／４）

＜Multi-Function Transistor＞

RT8Ｈ012Ｃ
Bipolar voltage detector

ABSOLUTE MAXIMUM RATINGS (Ta=25℃ Unless otherwise noted)
SymbolParameterRatings

UnitVcc

Supply voltage

37VVOUT

Output voltage

Vcc

V

IOUT

Output sink current

20mA

PD

Power Dissipation

200mW

TOPR

Operating temperature-20〜+75℃

TSTG

Storage temperature-40〜＋150℃

ELECTRICAL CHARACTERISTICS (Vcc=5V , Ta=25℃ Unless otherwise noted)
SymbolParameter

Test condition

MinLimits
Typ Max

Unit

236

V

Vcc

Supply voltage

ICC

Circuit current

VS

Detecting voltage

1.15

1.2

1.25

V

ΔVS

Hysterisis voltage

153045ｍV

Vs/ΔT

Detecting voltage temperature coefficient250

Rp=47kΩ

0.02

VIN

Input voltage range

VCC≦７V
VCC＞７VIIN

Input current

VS=1.25V

130TpdDelay time：VOUT L→H

Cd=0.1uF

2.4

Icd

Constant current at Cd pin

Vo(sat)IOL

Output saturation voltage
Output leakage current

uA

-0.3
-0.3-80
Rp=47kΩ、IL=3mA
VOUT=5V%/℃
VCC
7V

500

nAｍｓ-55

-30

uA

0.2

0.4

V

1uA

041007（２／４）

＜Multi-Function Transistor＞

RT8Ｈ012Ｃ
Bipolar voltage detector

APPLICATION CIRCUIT EXAMPLE

Vcc

RPRP

Vcc

R1

RL

OUT
VSdelay
RP：Resistance whichsets up output current capability
Cd：Delay capacitor

R2GNDCCd

R1＋R2R2

The detecting supply voltage （Typ）＝1.2 ×V

The delay time （Typ）＝0.024×Cd（uF） sec

TYPICAL CHARACTERISTICSCIRCUIT CURRENT VS SUPPLY VOLTAGE

DETECTING VOLTAGE VS SUPPLY VOLTAGE（IRP≒100uA,IL≒5mA）

2.00

1.25

DETECTING VOLTAGE Vs（V)CIRCUIT CURRENT （mA）

1.80
1.60
1.40

RP=22K

1.20
RP=47K

1.00
0.80

RP=100K

0.60
RP=360K

0.40
0.20

VSH

1.24
1.23
1.22
1.21
1.2

VSL

1.19
1.18
1.17
1.16

0.00

00510152025303540

10203040

SUPPLY VOLTAGE （V)

SUPPLY VOLTAGE （V）

041007（３／４）

＜Multi-Function Transistor＞

RT8Ｈ012Ｃ
Bipolar voltage detector

HYSTERISIS VOLTAGE VS AMBIENTTEMPERATURE
0.06

HYSTERISYS VOLTAGE ΔVs（V）

1.24
0.05

1.23
1.22

0.04

1.21
Vcc=10V

1.2
1.19
1.18

Vcc=5V
Vcc=3V

0.02

Vcc=3V

1.17

0.01

1.16
1.15
-40

-20

020

4060800-40100-2020406080100

AMBIENT TEMPERATURE Ta（℃）

DELAY TIME VS DELAY CAPACITANCEOUTPUT SATURATION VOLTAGE VS OUTPUT SINK CURRENT

VCC=5V、Ta=25℃

10000010000VOUT=L→H

1000100

VOUT=H→L

1010.1
1E-10

VCC=5V、Ta=25℃

3.5
RP=360K
3RP=100K

RP=51K RP=30K

RP=10K

2.521.5
10.5
01E-09

1E-08

1E-07

1E-06

0.0000105

DELAY CAPACITANCE (F)10152025
OUTPUT SINK CURRENT (mA)30

LOW SUPPLY VOLTAGE VS OUTPUT VOLTAGE (RP=360kΩ)LOW SUPPLY VOLTAGE VS OUTPUT VOLTAGE (RP=100kΩ)

VCC=5V、Ta=25℃

VCC=5V、Ta=25℃

1.00

1.00

0.90

OUTPUT VOLTAGE （V）

0.90

OUTPUT VOLTAGE （V）

0AMBIENT TEMPERATURE Ta（℃）

1000000

DELAY TIME (us)Vcc=10V

0.03

Vcc=5VOUTPUT SATURATION VOLTAGE （V)DETECTING VOLTAGE VSL（V）

1.25

DETECTING VOLTAGE VS AMBIENTTEMPERATURE

0.80
0.70
0.60
0.50
0.40
0.30

RL=2.2K

0.20

0.80
0.70
0.60
0.50
0.40
0.30
RL=5.1K

0.20
0.10

0.10

RL=22K

0.00
00.2

0.4

0.6

0.8

11.2

1.4

1.6

1.8

RL=51K

0.00
20

SUPPLY VOLTAGE （V）

0.2

0.4

0.6

0.8

11.2

1.4

1.6

1.8

2

SUPPLY VOLTAGE （V）

041007（４／４）

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Aug.2016