SALES OFFICES

12th International
Automotive
Electronics
Technology
Exhibition

Shindengen Electric Manufacturing Co., Ltd.
www.shindengen.co.jp

Address: New-Ohtemachi Bldg., 2-2-1, Ohtemachi, Chiyoda-ku, Tokyo 100-0004, Japan

TEL: +81-3-3279-4431 (main)

FAX: +81-3-3279-6478

Established: August 16,1949

Capital: ￥17,823,148,008

Main Business : Manufacture and sale of semiconductor products, power supply products and car electronics products
Net Sales: ￥94,703,000,000（FY2018）

Sales Promotion Section, Sales Control Dept.
New-Ohtemachi Bldg., 2-2-1 Ohtemachi, Chiyoda-ku, Tokyo, Japan 100-0004
TEL: +81-3-3279-4537 FAX: +81-3-3279-4495

Regarding Export Restrictions
Please ask the relevant sales representative for information on export restrictions that may apply to products shown in this catalog before placing an order.

・In the interests of product improvements, details set out in this catalog may be changed without notice.
・Please make sure that the information set out in this catalog is up to date before placing an order.
・Please be sure to read the delivery specifications and instruction manual before using products.
・Printed January 2019

CAT.NOF080-6e

INDEXMISSION

Power Device ProductsHigh Power/High Density Diodes

Car Electronics Products

Maximizing energy conversion efficiency forthe benefit of humanity and society

1kW・2kW DC-DC Converters

Power Devices■ Bridge Diodes■ High-speed Rectiﬁer Diodes■ Thyristors■ SIDACs■ Power ICs■ Power MOSFETs■ Power Modules

Power Modules for Driving
Large Current Motors
Devices for ECUs

Energy System Products

Low Voltage Power MOSFETs

Car Electronics

EETMOS SeriesHigh Voltage Power MOSFETs

VX Series

Reverse Input Protection

Pch MOSFET V-Diode

Communication Network
Compatible 90kW
(Dual Output)
High Output Quick Chargers■ Products for 2-wheel vehicles■ Products for 4-wheel vehicles■ General-purpose products

Reverse Input Protection

Energy Systems

Nch MOSFET Gate Driver IC
For Surge Protection TVS Series■ EV/PHEV charger■ PV inverters for photovoltiac generation■ Power storage system■ Rectiﬁer for communication station■ Rectiﬁer for mobile communication base station■ Inverter for communication station■ Monitoring equipment

Wireless Charging Systems

i-Stack/High Current Modules
Power Modules（ Next-generation Device Modules）

01

Power
Devices

Car
Electronics

EnergySystems

Wireless Charging
Systems02

EV/PHEV

Under development

Wireless Charging Systems

Wireless Charging System(WCS) Ground assembly and vehicle assembly
Current EV and PHEV charging systems require a cable which faces the annoying
problem of connector deterioration. The future charging system can be reliable,safe, and very convenient wireless charging. We are developing this type of system.

Overview

If the wireless charging system is installed in an electric vehicle, the electromagnetic fieldfrom the power transmitting coil on the ground delivers power to the power receiving coilin the automobile to charge the battery in the vehicle.
Even if the distance between the power transmitting coil and the power receiving coilincreases, the electrical power can be transmitted with high efficiency. This system ishighly robust against position misalignment and it is suitable for electric vehicles. The battery can be charged just by parking the vehicle over a power transmission coil installed athome or in a parking lot. This system provides dramatically improved convenience.
Ground assembly

Vehicle assembly(Power transmitting coil)(Power receiving coil)

EV/PHEV/HEV/FCVUnder development

Next Generation
1kW・2kW DC-DC Converters
These isolated DC-DC converter units convert the high DC voltage of an electric vehicle battery
to a low DC voltage to supply power to 12V power lines for auxiliary equipment.

Overview

With the evolution of car electronics, the auxiliary power systems of environmentally-friendly
vehicles are changing dramatically, including increased power supply for auxiliary devices aswell as redundant power supplies in the case of autonomous vehicles.
using easy-to-integrate 1kW and 2kW DC-DC converters allows us to meet the power systemneeds of a wide range of next-generation environmentally friendly vehicles.

●In the maximum class 11kW power output for passenger vehicles, we are pursuing development in vehicle height space and the industry’s largest Z3 class.

Features●Use of semiconductors which are produced in-house allows optimum design andimproved performance.

【Ground Assembly】

Specifications
仕様● Compact general-purpose PSUs optimized for the redundant systems of autonomous vehicles●Various safety controls comforms the industry standard
Features7.7kVA (WPT2)/11.1kVA (WPT3)

Linear system/input voltage range

Single-phase 2-wire system, AC180‒264V

Z standard

Z1, Z2, Z3 compatible● Supports a wide range of input voltage (160‒415V), also available in a compact mobility
lineup (70‒160V)● 24V output series is also available, with air-cooled, water-cooled, and waterproof models(2kW) to choose fromSPEC

Rated input power● 1kW Series and 2kW Series can be operated in parallel to achieve higher power levels● Achieves over 90% conversion eﬃciency (over 93% for the 2kW high eﬃciency model)● Supports CAN-FD, Repro, and security systems"【Vehicle Assembly】
Rated output power

7.0kW／10kW

Output voltage

200V〜450V

Z standard

Z2,Z3compatible※ Connection compatibility

Scheduled to conform to IEC 61980 (SAE J2954)

SpecificationsSPEC

1kW Series

Input Voltage Range

70〜160V,160〜415V

Output Voltage Range, 12V System03

18〜32V
75A

150A/200A (instantaneous)

Maximum Output Current, 24V System

40A

100A

Dimensions (WxDxH)

166×100×30mm

160×160×40mm

830g

1400g/2200g (Waterproof)

W

Charging

90〜160V,160〜415V
10〜15.5V

Output Voltage Range, 24V System
Maximum Output Current, 12V System

2kw Series

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90%

93%

Cooling Method

Air Cooled, Water Cooled,

Air Cooled, Water Cooled, Waterproof W/J* Note that speciﬁcations, appearance etc. are subject to change without prior notice as the products are still under development.

04

EV/PHEV/HEV/FCVPower Supply Systems for Vehicle's accessories
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Below shows the characteristics of output voltage during parallel operation when combining
1kW and 2kW. Output current value of two converters can be adjusted to supply power in awell-balanced manner. If load demand exceeds rated power of the main DC-DC, power canthen be supplied from the sub DC-DC as a booster.

When structuring an autonomous driving system with complete redundancy, it is also necessary to make the auxiliary power supply redundant. Using 1kW and 2kW DC-DC converters
make it possible to meet the needs of a wide range of auxiliary power supply systems.

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when a heavy current converter is needed.
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Series1kW Series

2kW Series

Onboardcharger

Input voltage range

Output voltage

Output current

Rating

160V～415V

10～15.5V

67A

1000W

75V～160V

10～15.5V

50A

750W

75V～160V

18～32V

40A

1000W

150～300V

10～15.5V

75A

1100W

70～160V

10～15.5V

120A

1800W

180～310V

10～15.5V

150A

2200W

240～415V

10～15.5V

150A

2200W

240～415V

18～32V

100A

2500W

* Note that speciﬁcations, appearance etc. are subject to change without prior notice as the products are still under development.

06

Communication Network Compatible

New Product

90kW (Dual Output) High Output Quick Charger
Overview

The SDQC2F90 Series is the only charger in Japan witha maximum output of 90kW, providing 1.8 times theoutput of conventional (50kW) quick charger. This can
reduce the charging time of CHAdeMO1.2 certiﬁed EVs
by about 40% compared to conventional (50kW) chargers, thereby helping eliminate lineups for charger atcharging spots which is a growing concern due to theincrease of EVs.

New ProductHigh Power/High Density Diodes
Overview

Shifting to higher power and density diodes is essential to facilitate to the downsizingof chargers.
We have commercialized compact, large-capacity bridge diodes that are also ideal foruse in quick chargers.

● Large current (Rated current: IF(AV)=100‒200A)

Features● High heat dissipation/Isolated type (UL1557 certiﬁed)● Substrate-mountable thin DIP (JH Package)● Same package height as a standard IGBT module (17 mm, MG038)● Separated AC-DC type (makes pattern layout easy)● New charging standard compatibility: CHAdeMO protocol Rev 1.2 compatible

Input side (AC)Input side (AC)● Capable of 90kW output, about 1.8 times better than conventional (50kW) chargers

Features

Bus b● Compatible with EVs equipped with a large capacity batteryar

Output side

● Multiple outputs: Able to optimally split the 90kW output power to two charging EVs

Output side

● IP54 dust and water resistance compliance to deliver outstanding environmental resistance
Substrate● Noise: Features low-noise design with power circuits whose technology has been reﬁned inﬁelds that requiring high reliability, such as power supplies for telecommunications carriers● Convenient functions:[Charging condition setting function] Charging time, charging rate, and usage time can be set;[Multilingual Support] (Japanese, English, Chinese)

Item

Specifications

M

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Specs
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SDQC2F90UT4415-M

Charging standard

CHAdeMO protocol Rev 1.2 (certiﬁed)

R a t e d3-phase 4-wire system, AC415V (±15%), 50/60Hz

i n p u t

Power receiving capacity

97kVA *1

Maximum input current

159kVA *1

Power

0.99 or more *2

factorOutput voltage

DC150‒450V

Output current

0‒200A (maximum per system)

Output power0‒90kW (maximum power of charger)

Conversion eﬃciency

94% or more *2

Dimensions (WxHxD)

990mm×1,840mm×900mm (excluding protruding parts)

W

Approx. 650 kg

e

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Communication network

Nihon Unisys, Ltd. "smartoasis®" *3 Charging infrastructure system service* 1 Input AC352V, output DC450V/200A at output* 2 Input AC415V, output DC450V/200A at output* 3 "smartoasis®" is a registered trademark of Nihon Unisys, Ltd.

07

*Scan QR codefor more info

Outline（mm）

Specifications

D100JHT80V
D100JHT160V

JH
㼟㻥
30

.0

45.7

MG038A
MG038B
MG038C
MG038D

Equivalent circuit

MG038

50

.0

.0

89

VRM

IF(AV)

V（※）
F

800V

100A

1.10V

1600V

100A

1.15V

800V

200A

1.05V

800V

150A

1.05V

1600V

200A

1.05V

1600V

150A

1.05V

* Per element08Under development

Reference

Power Modules for Driving Large Current Motors
Overview

The shift towards vehicle electriﬁcation including mild hybrids, compact cars and motorcycles, is greatly expanding the need for high-current motors. At the same time, there is growing
demand for higher current capacity in switching devices for driving motors. Our company isengaged in developing power modules for inverter circuits that drive heavy-duty motors.

● Removes the need for the insulating measures required when using as a discrete component
due to being separated from the heat radiating surface

Features● Eliminates device imbalances that occur when discrete components are connected in parallel

New Product

Under development

Devices for ECUs
Overview

Reference

A wide variety of technologies that realize size and weight reduction are essential for devices
that drive vehicle DC-DC converters, electric power steering, and electric oil pumps and otherequipment. Our high heat dissipation packaging has earned an outstanding reputation in thisﬁeld, and we are strongly committed to launching new products that leverage state-of-the-art
technology.

Dio d e s

● TO-277A supports the wide current range of previous package types

FeaturesTO-252 or TO-263 (IF (AV) =5‒15A)● Thin type (t=1.1 mm)● Connection: copper clip + solder● Achieves a smaller size despite higher power capacity due to exclusively developed elements
and a high heat dissipation package● Based on AEC-Q101● 1 leg structure improves ﬂexibility for mounting (MG047)

Po w e r Mo d u le s

● Can be provided in a semi- or full-custom solution that meets your speciﬁc needs● Extensive range of packages● Speciﬁcation lineup is geared towards vehicle-mounted compatibility (speciﬁcations vary by
product)
Outline（mm）

Specifications

Equivalent circuit

・ Tj=175 C guaranteed (MG031)

Example Characteristics

・ Peripheral circuits (shunt resistor, thermistor, snubber, etc.) are built in to reduce drive
circuit size (MG048, MG054)

㼟㻝㻜㻙㻝㻘㻟㻔㻹㻳㻜㻟㻞㻘㻡㻡㻕●MG032A4207R5A
VDSS=75V
ID=420A
Ron=0.98mΩmax.
●MG032B420010A
VDSS=100V
ID=420A
Ron=1.37mΩmax.

MG032
74

.5

7.5

11

● Can be provided in a semi- or full-custom solution that meets your speciﬁc needs
Outline（mm）

Specifications

6in1 type.

MG031

40

.0

.0

.0

50

.0

09

9

●Specs１
VDSS=40V
ID=148A
Ron=2.2mΩtyp.
●Specs２
VDSS=120V
ID=47A
Ron=13mΩtyp.など●Specs１
VDSS=40V
ID=150A
Ron=1.02mΩtyp.
●Specs２
VDSS=60V
ID=100A
Ron=1.55mΩtyp.

MG048
31

●Specs１
VDSS=100V
ID=400A
Ron=1.52mΩtyp.
●Specs２
VDSS=150V
ID=275A
Ron=3.5mΩtyp.
●Specs３
VDSS=200V
ID=190A
Ron=7.3mΩtyp.

Example Characteristics㼟㻝㻝㻙㻞㻔㻹㻳㻜㻠㻤㻕.0㼟㻝㻜㻙㻝㻘㻟㻔㻹㻳㻜㻟㻞㻘㻡㻡㻕

2.5

3in1 type.

VDSS (or VCES)
100, 200, 750V
ID (or IC)
500A

60

MG055

.0

44

14

㼟㻝㻜㻙㻞㻔㻹㻳㻜㻠㻣㻕

MG047

Equivalent circuit㼟㻝㻝㻙㻝㻔㻹㻳㻜㻟㻝㻕.053㼟㻝㻝㻙㻟㻔㻹㻳㻜㻡㻠㻕VDSS=40V
ID=190A
Ron=0.81mΩtyp.

MG054
31

.0

.0

47

10

Low Voltage
Power MOSFETs

New ProductHigh Voltage
Power MOSFETs

Under development

EETMOS Series
Overview

Many power MOSFETs used in electrical products―including various motors,
DC-DC converters, and for preventing reversed connections―the demand for smaller sizes,
larger currents, and lower noise has intensiﬁed.
Our power MOSFETs are ideal for a wide range of applications including motor drives, converters, ECUs and more.

Overview

Low loss and high eﬃciency are required for power MOSFETs that function as switchingelements used to convert power from a high voltage vehicle-mounted battery.
Our VX Series realizes high avalanche breakdown, high di/dt breakdown, and high ESD
breakdown while lowering on-resistance (Ron) by 20% compared to the previous series.

● High ESD immunity (min. 2kV with HBM)

● Lineup includes products with medium breakdown voltage (40‒120V) necessary for moving to 48V● New package (LF) structure improves mounting and reliability● Features industry's highest Ron and Qg (planar structure)

Features● Based on AEC-Q101● All guaranteed avalanche & di/dt● Compliant with AEC-Q101● Customization(faster integrated diode, etc.) is also available upon request● Semi-custom or bare die can also be supplied

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LF Packages (Similar to MO-235)
VDS

ID

Ron(typ)

Qg

P140LF4QNK

40V

140A

1.22mΩ

96nC

In production

P98LF6QNK

60V

98A

2.6mΩ

96nC

In production

FZ-7p Packages (TO-263SC)

Specifications

VDS

ID

Ron(typ)Qg

P6FE25VX5K

250V

6.0A

0.58Ω

10nC

In production

P2FE60VX5K

600V

2.0A

3.4Ω

12nC

In production

P1FE90VX3

900V

1.0A

9.5Ω

10.8nCIn production

VDS

ID

Ron(typ)Qg

FH Packages (TO-263AB-1)

VDS

ID

Ron(typ)Qg

P240FZ4QNKA

40V

240A

1.07mΩ

133nC

In production

P3FH90VX3

900V

3.0A

2.8Ω

22nC

under
development

P170FZ6QNKA

60V

170A

1.93mΩ

139nC

under
development

P5FH90VX3

900V

5.0A

1.2Ω

41nC

under
development* Please see our semiconductor general catalog for the full lineup.

11

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••

• • •• • •!"#$%&'#(%)*

Specifications

After
revision• • •• • •!!"#$% -!"#$%&'(%%&%)1%+,-.+/0!!"#$% '()*!!"#$% &!"#$%&'1%%&%)(4+,-.+/0• • ••

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Under development

VX Series● Achieves low Ron (On-resistance) and low Qg (Gate Charge) through a trench gate structure
and optimized layout

Features

New Product* Please see our semiconductor general catalog for the full lineup.

12

Reverse Input Protection

Under development

Pch MOSFET V-Diode

Reverse Input Protection

Under development

Nch MOSFET Gate Driver IC㼟㻝㻡㻙㻝㻔⌮᝿㻰㼕㻕
VIN

TVS
Overview

LOAD

Due to the increasing capacityof various ECUs, loss due to voltage drop in the rectiﬁer
VDD:5V
VIN VCAPused
SOURCEGATE
element
to prevent
reverse connection/current has become a serious issue.
OPEN
Our
with measures to protect from a reversed connection or
EN MF2003, equipped
OUT
reverse MF2007
current on a PchMOSFET, is not only eﬀective in solving the above problems, but also
OPEN
REV
contributes
to reducing
IDET board size since it can be downsized.

Protects from reversed connections and prevents reverse current when used in combination
with any external Nch MOSFET.
The reverse current prevention function can be disabled at the switching terminal to allow
use as an ON/OFF switch such as a semiconductor relay that conducts in both directions.
With an absolute maximum rating of 100V, these can also be used for high voltage input
applications including 48V batteries.

Overview

GND● Product name: MF2003● Product name: MF2007● Built-in reverse input protection● Built-in reverse input protection

Features● Built-in detection of reversed current㼟㻝㻡㻙㻞㻔㻻㻺㻛㻻㻲㻲㻕
Features● PchMOSFET: Ron=57 mΩtyp.
● Dark current 3μA max.

VIN

● Built-in detection of reversed current (can be disabled)● "Back to Back" NchMOSFET connection is possible● Broad input voltage range: 3.5‒70V

LOAD● Broad input voltage range: 2.5‒40V
VIN VCAP SOURCE GATE

IDET㼟㻝㻡㻙㻝㻔⌮᝿㻰㼕㻕

GND

Reverse Input Protection Application (Ideal Diode Operation)

Internal Block Diagram
Built-in Pch MOSFET

VIN

VIN

TVS
㼟㻝㻡㻙㻝㻔⌮᝿㻰㼕㻕㼟㻝㻠㻔⌮᝿㻰㼕㻕

VIN VCAP SOURCE GATE
OPEN

OPEN

VIN

OUT

EN

MF2007

REV

EN

VDD:5V

TVS
Basic Circuit

OPEN㼟㻝㻡㻙㻞㻔㻻㻺㻛㻻㻲㻲㻕

TUB

Reverse current
protection
Reversedconnection
protection

VIN㼟㻝㻡㻙㻞㻔㻻㻺㻛㻻㻲㻲㻕

LOAD

EN

MF2007REV

REVChargePump1

VDD:5V
+

VDS

OUT

IDET

Reversecurrent

VIN

VIN VCAP SOURCE GATE
EN

MF2007

REV

Input signal
ON:Hi
OFF:LoIDETIDETIC Internal GND

ON/OFF Application
Input signal
ON:Hi
OFF:LoCharge
Pump2

+

OUT

MF2007

REV

Reversedconnection
protection

Reverse current
protection
LOAD

IDET

VDD:5V

OUT
IDET

GND

VIN

GND

OUT

VIN VCAP SOURCE GATE
EN

LOAD

VDD:5V

GND

TVS

VCAP

ON/OFF

GND

VIN

㼟㻝㻠㻔⌮᝿㻰㼕㻕

GATE

OSC

IDET

VIN VCAP SOURCE GATE
OPEN

+

OUT

GND

MF2003

SOURCE

LOAD

VIN

TVS

Internal Block Diagram-

REV

Reverse Input Protection Application (Ideal Diode Operation)

OUT+

MF2007-

EN

VDD:5V+

Input signal
ON:Hi
OFF:LoOUT

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TVS
13

TUB

OUT

MF2003
TUB

14

New Product

Reference

Under development

i-Stack/High Current Modules

TVS Series

Overview● Achieves overcurrent resistance equivalent to TO-262 in a package similar to JEDEC TO-252● Achieves a thinner 2.3 mm component height

FeaturesFeatures● Can be mounted in a standard TO-252 soldering pattern

For our power modules developed for large motor driving inverter circuits, we have adopted a"stack structure" in the laminated structure. This has allowed us to achieved smaller size, better
heat dissipation, lower inductance, and lower resistance than with previous module structures.
Not only can further miniaturization be realized by mounting on next-generation devices (SiC,
GaN, etc.), but these are also suited for high frequency operation due to their low inductance.

● Features compact size (40‒50% smaller than previous product), high heat dissipation, low
inductance, and low resistance● Ideal for high-frequency operation due to its low inductance● Screw-down terminal structure supports higher currents(conforms to JEITA ED-7500B SC-63 (JEITA TO-252))● Better durability with a 'copper clip + solder' connection● Lineup planned to handle operating voltage (VBR) of 27‒75V for use with various batteries(12‒48V)

i-Stack module withdouble-side heat dissipationEffect: Parasitic
Inductance Ratio 

Overview

We are working on the productization of a newseries for our ever-popular TVS series that will becapable of doubling overcurrent capacit y while
maintaining the same package size.

i-Stack module withsingle-side heat dissipation● Planned to based on AEC-Q101

Comparison of Package PRSM Tolerances


27V TVS and PRSM Tolerance (10/1000us)  







PreviousConstraction  






ＰＲＳＭ
（W）

Radiation from A surface
DBC Board

Cu clip

Cu clip

DBC Board
Radiation surface

DBC Board
Radiation from B surface

Small

Die size→

Specifications

Large

Specifications

15

Absolu te maximu m ratin g
P RSM

T stg

Tj

V RM

[W]

[℃]

[℃]

[V]

ST40-27FR

4000-55〜175

175

23

ST40-30FR

4000-55〜175

175

ST40-33FR

4000-55〜175

ST40-36FR

4000

ST40-58FR

4000

ST40-68FR
ST40-75FR

min
[V]

V BR

max

IR maxCompliant
with
AEC-Q101

[V]

[uA]

24.3

29.7

5

○

24

28.0

32.0

5

○

175

25

31.0

35.0

5

○

-55〜175

175

27

34.0

38.0

5

○

-55〜175

175

45

52.0

64.0

5

○

4000

-55〜175

175

58

64.4

71.2

5

○

4000

-55〜175

175

61

70.0

79.0

5

○










Previous
Constraction!


Double-side
Module
Single-side
Module# # 

 Characteristics
Example

VDSS=100V
Ron=0.45mΩtyp.
ID=400〜500A

Inverter circuit
46.0

Ele ctrical pro p e rtie s

 



RD002

Planned lineup









 

Circuit diagram






"

㼟㻝㻣㻙㻝㻘㻟㻔㻾㻰㻜㻜㻞㻘㻠㻕Single-side
Module 
 = 100 
Previous
 





Outline（mm）

Double-side
Module

Cu clip = 100Previous





Effect: Wiring
Resistance Ratio

For Surge Protection.040㼟㻝㻣㻙㻞㻔㻾㻰㻜㻜㻟㻕VDSS=100V
Ron=0.45mΩtyp.
ID=400〜500A

Relay circuit
RD003

46

.0

.0

40

㼟㻝㻣㻙㻝㻘㻟㻔㻾㻰㻜㻜㻞㻘㻠㻕

Inverter circuit
RD004
39

.5

.0

VDSS=100V
Ron=0.45mΩtyp.
ID=400〜500A

36

16

Power Modules(Next generation devices)
Reference

Overview

Shindengen Global Network

In recent years, next generation devices (SiC and GaN) that do not use silicon have been
attracting signiﬁcant interest due to their beneﬁts of smaller power supplies and better eﬃciency. While next-generation devices oﬀer high eﬃciency by reducing switching loss, they
are also diﬃcult to use eﬀectively due to their high slew rates.
To solve this, we modularized the basic circuit to not only make it easy to handle, but also
make miniaturization and better eﬃciency of the ﬁnal equipment much easier to achieve.

S iC P o w e r M o dul es（sample availability planned for 2020）

Features● Realizes miniaturization and large capacity by using an insulating package with a high heatdissipation rate
● Features a totem-pole type bridgeless PFC incorporating our proprietary low VF diodes

G a N Po w er M o dul es（sample availability planned for 2019）● Easy handling is achieved by making the half-bridge a single module● Realizes miniaturization and large capacity by using an insulating package with a high heatdissipation rate

Type

Circuit diagram

Example Characteristics㼟㻝㻤㻙㻝㻔㻿㼕㻯㼋㻝㻕Specifications
VDSS=650V
Ron=20,52mΩtyp.

Half-bridge

SiC㼟㻝㻤㻙㻞㻔㻿㼕㻯㼋㻞㻕【SiCMOSFET】
VDSS=650V
Ron=52mΩtyp.
【Diodes】
VRM=600V
VF=0.87Vtyp.(※)

Totem-pole typebridgeless PFC㼟㻝㻤㻙㻟㻔㻳㼍㻺㻕

GaN

Half-bridge

VDSS=650V
Ron=50mΩtyp.
Vth=1.7Vtyp.

* Per element

17

Overseas Network

Domestic Network

OfficesAffiliated Companies

OfficesAffiliated Companies

・ Seoul Office・ SHINDENGEN UK LTD.
・ SHINDENGEN AMERICA, INC.
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・ HEAD OFFICE (Chiyoda-ku, Tokyo)
・ OSAKA BRANCH OFFICE
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・ UTSUNOMIYA SALES OFFICE

・ AKITA SHINDENGEN CO., LTD.
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・ HANNO FACTORY
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・ SHINDENGEN MECHATRONICS CO., LTD.

18