IASLAGM
Laser Ablation
GED_MSAG System

IAS Inc.

A 300 mm wafer sample can be analyzed by Laser Ablation (LA) ICP-MS without
using a small, enclosed cell. Generated particles by LA are aspirated by anejector and introduced to ICP-MS via GED.

Features◆Femto-second laser and Galvanometer mirror ablates up to 12” (300 mm) wafer precisely.

◆A wafer sample is laser ablated without using a small, enclosed cell, and the generated
particles are aspirated by the ejector and introduced to the ICP-MS via Gas Exchange Device(GED).

◆

Dual syringe model MSAG_DS enables quantitative analysis under a dry plasma condition ofICP-MS using the method of standard addition.

◆Ultra-trace level of spot and wafer bevel analysis is available.

◆

Deeper level, > 300 μm, of profile and impurity analysis is available.

◆

Two load ports from 12“ (300 mm) to 6” (150 mm) wafer, aligner and wafer transfer robot are
integrated for fully automated operation (Option)◆Alternative sampling stage is available for non-wafer samplers.

Schematic diagram of LA-GED-MSAG-ICP-MSAnalysis of spiked Si wafer●●

TRA analysis of spiked Si wafer sample
5 uL of 0.1 ppb mixed standard was spiked on a Si wafer and dried.

LA frequency：10 kHz, Galvanometer mirror scan speed：50 mm/sec, Galvanometer mirror scan width：5 mm (Y axis direction),
Wafer stage movement speed：0.0476 mm/sec (X axis), Wafer stage movement distance ：40 mm (X axis)
ICP-MS data acquisition mode： Transient analysis, Dwell time：50 msec/mass, Date acquisition interval ：1.62 sec●

Quantitative analysis of SiC wafer using the method of standard addition

LA frequency：10 kHz, Galvanometer mirror scan speed：50 mm/sec, Galvanometer mirror scan width：1 mm (Y axis)
Wafer stage movement speed：0.025 mm/sec (X axis),
ICP-MS data acquisition mode： Spectrum, Integration time：1 sec/massAnalysis of 0.5 ppb 20 nm Au particles on Si wafer●●Single nano-particle analysis of Au particles on Si wafer sample.
3 uL of 0.5 ppb Au particles standard solution in IPA was spiked on a Si wafer anddried.

X axis full scale : 5 sec

X axis full scale : 0.002 sec

LA frequency：10 kHz, Galvanometer mirror scan speed：50 mm/sec, Galvanometer mirror scan width：15 mm (X Y axis direction),
ICP-MS data acquisition mode： single nanoparticle mode, Dwell time：0.1 msec/mass, Analysis time ：600 sec

Au sensitivity by MSAG : 2.94 ag/count
Average Au particle count : 28 counts# of Au particle in 3 μL : 19,083 pcs# of Au particles detected : 16,009 pcs
Au nano-particle size calculated from MSAG was 20.1 nm
The number of particle recovery was 84%

Analysis of GaN waferLA frequency：10 kHz, Galvanometer mirror scan speed：50 mm/sec, Galvanometer mirror scan width：5 mm (Y axis direction),
Wafer stage movement speed：0.025 mm/sec (X axis),
ICP-MS data acquisition mode： Single nano-particle analysis, Dwell time：0.1 msec/mass, Analysis time：60 sec

Analysis of bevel
Photo of bevel area
Laser ablation width : 250 μm

Analysis of Au particles on bevel(Two droplets of 20 nm Au particle solution)

Analysis of bevel of Si wafer (1st ablation): Several impurities were found at the same spot.

Analysis of spiked wafer (Two droplets of STD solution on the bevel area after 7 times cleaning):
Two peaks were detected.

LAGM Software
LAGM software communicates with ICP-MS software that enables fully automated operation.
- Calibration mode ： Calibration curves while laser ablating a sample are obtained using MSAG_DS.
- Full scan mode ： Entire wafer is laser ablated according to the analysis time. LAGM software
automatically calculates speed of X-Y-Z-θ stage to ablate the entire wafer equally.
- Spot mode ： Multiple specified spots can be analyzed automatically. The spot information inKLARF format file can be imported.
- Straight mode ： Straight line specified by two spots is analyzed with a specified widthcontinuously.
- Block mode ： It is similar to the straight mode, but a specified block size (e.g. 1 mm x 1 mm) isablated for a specified time. After waiting for an interval time, the block next to the ablated block isablated. This mode is better than the straight mode in terms of space resolution.
- Depth profile mode ： The same spot with a specified size is ablated repeatedly to get depth profile
information. An interval time can be set after ablating one layer, which gives better resolution ofdepth profile.
- Bevel mode : Multiple specified areas of wafer bevel can be analyzed automatically.
Expert_LA model includes two load ports, which enables fully automated analysis of wafer samples by
setting up a recipe for each wafer. A sample wafer is taken out from one of L/Ps, and it is recovered inanother L/P after analysis of wafer.
LAGM software controls MSAG_DS that has two special syringe pumps. One of syringe pumps
contains a 1% HNO3 solution and the other syringe pump contains a mixed standard solution in 1%
HNO3, which are injected at 3 μL/min in total and the ratio of two syringe pumps are changed to makeSpecification and Environment
Basic components- Femto-second laser ： 257 nm- Maximum ablation frequency : 60 kHz- Galvanometer mirror moving speed ：100 mm/sec- X-Y-Z-θ stage- Ejector- GED-Q- MSAG-DS- Mass flow controllers- LAGM intelligent software- FFU (ISO class 3 environment）

Environment
Temperature： 15～30℃Humidity： 35～85%RH No condensation
Power supply, size and weight depends on themodel. Please contact us.

Option- Expert_LA that includes the followings:
FOUP loader : 2 set
Wafer transfer robot : 1 set

IAS Inc.

IAS

2-2-1 Hinohonmachi, Hino, Tokyo 191-0011 Japan
TEL： 042-589-5525 FAX： 042-589-5526
E-Mail： iasjapan@iasinc.jp URL： https://iasinc.jp

The contents of this catalog may be changed without notice to improve quality of product.
The data shown in this catalog is an example. IAS doesn’t not guarantee the data.
2023.07