PRELIMINARY<MFT LITE>

RT8N010M

Notice : This is not a final specification
Some parametric are subject to change.

NPN transistor with built-in pull-up resistor

OUTLINE DRAWING

Unit：mm

2.1⑥②⑤③④0.24

①0.13

2.0

0～0.1

0.9

FEATURE・Enables downsizing of sets and high density mounting.
・Built-in bias resistor (R1=10kΩ/R2=10kΩ)・Built-in pull-up resistor (R3=10kΩ)

0.65 0.65

1.25

0.7

DESCRIPTION
RT8N010M is a composite transistor composed of NPN
transistor and resistor.
Expected to reduce the size of the set and greatly reduceparts and man-hours.
RT8N010M have built-in resistor, switch circuit, ideal as alogic inversion circuit.

APPLICATION
General electronics equipment.

TERMINAL CONNECTOR①：(N.C.)②：BASE③：COLLECTOR1④：COLLECTOR2⑤：EMITTER⑥：(N.C.)APPLICATION CIRCUITJEITA：SC-88
JEDEC：－MAXIMUM RATING (Ta=25℃)
SYMBOL
VC1BO
VC1EO
VEBO
VIN
IC1
IC2
ICM
PC
Tj
Tstg

PARAMETER
Collector1 to Base voltage
Collector1 to Emitter voltage
Emitter to Base voltage
Input voltage
Collector1current
Collector2current
Peak Collector1 current
Total dissipation※ 1Junction temperature
Storage temperature

RATING505010405010100200+150-55～+150UNIT
VVVVmAmAmAmW℃℃※ 1：mounted on glass-epoxy substrate(54mm×9mm×1mm)
Operating temperature range：Within Tstg temperature range and within Tjmax range.

MARKING
654010
１23

PRELIMINARY<MFT LITE>

Notice : This is not a final specification
Some parametric are subject to change.

RT8N010M
NPN transistor with built-in pull-up resistor

ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOLPARAMETERVBR(C1EO)
hFE
IC1BO
IEBO
VC1E(sat)
VI(ON)
VI(OFF)
fT
R1R2
R3
R2/R1

Collector1 to Emitter Breakdown voltage
DC forward current gainCollector1 cut off current
Emitter cut off current
Collector1 to Emitter saturation voltage
Input on voltage
Input off voltage
Gain band width product
Input Base resistor
Base to Emitter resistor
Collector2 resistor
Resistor ratio

TEST CONDITIONS
Ic1=100μA、RBE=∞
VC1E=5V, IC1=10mA
VC1B=50V, IE=0A
VEB=5V, IC1=0A
IC1=10mA, IB=0.5mA
VC1E=0.2V, IC1=5mA
VC1E=5V, IC1=0.1mA
VC1E=6V, IE=-10mA

MIN
50501930.9

LIMITS
TYP
100
1.5
1.12001010101.0MAX
0.1357
1.1UNIT
VμAμA
mVVVMHzkΩkΩkΩ-PRELIMINARY<MFT LITE>

RT8N010M

Notice : This is not a final specification
Some parametric are subject to change.

NPN transistor with built-in pull-up resistor

TYPICAL CHARACTERISTICS
IC1 - VC1E

hFE - IC1
1000

Ta = 25℃

80500uA

60300uA

VC1E=5V

400uA

DC current gainhFE (-)

Collector1 current
IC1 (mA)

100250uA
200uA

40

10085℃
25℃
-40℃

150uA

20
IB=100uA

0

100

1.0

2.0

3.0

4.0

5.0

110

Collector1 to Emitter voltage
VC1E (V)VC1E(sat) - IC1

VI(on) - IC1

1100
IC1/IB=20/1

VC1E=0.2V

Input ON voltage
VI(on) (V)Collector1 to Emitter saturation voltage
VC1E(sat)

100

Collector1 current
IC1(mA)

Ta=85℃
25℃
-40℃

0.1

0.01

10Ta=85℃
25℃
-40℃

10.1
110100

1

Collector1 current
IC1(mA)

10100

Collector1 current
IC1 (mA)

IC1- VI(OFF)rth(j-a) - Pw

100

1000

Transient thermal resistancerth(j-a) (℃/W)

Collector1 current
IC1 (mA)

VC1E=5V

101Ta=
85℃
25℃-40℃

0.1

100

10

Ta = 25℃
Single Pulse
mounted on glass-epoxy substrate(54mm×9mm×1mm)

100.5

1.0Input OFF voltage
VI(OFF) (V)

1.5

2.0

110Pulse width
Pw (ms)1001000

PRELIMINARY<MFT LITE>

RT8N010M

Notice : This is not a final specification
Some parametric are subject to change.

NPN transistor with built-in pull-up resistor

Pc - Ta

Collector power dissipation
Pc (mW)

250
mounted on glassepoxy substrate(54mm×9mm×1mm)

200150100500050100

Ambient temperature
Ta (℃)

150

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·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there isalways the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placementof substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
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Feb.2020