Microwave Single Layer
Ceramic Capacitors

013123

IMPORTANT INFORMATION/DISCLAIMER
All product specifications, statements, information and data (collectively, the “Information”) in this datasheet or
made available on the website are subject to change. The customer is responsible for checking and verifying
the extent to which the Information contained in this publication is applicable to an order at the time the order isplaced. All Information given herein is believed to be accurate and reliable, but it is presented without guarantee,
warranty, or responsibility of any kind, expressed or implied.
Statements of suitability for certain applications are based on KYOCERA AVX’s knowledge of typical operating
conditions for such applications, but are not intended to constitute and KYOCERA AVX specifically disclaims
any warranty concerning suitability for a specific customer application or use.
ANY USE OF PRODUCT OUTSIDE OF SPECIFICATIONS OR ANY STORAGE OR INSTALLATIONINCONSISTENT WITH PRODUCT GUIDANCE VOIDS ANY WARRANTY.
The Information is intended for use only by customers who have the requisite experience and capability todetermine the correct products for their application. Any technical advice inferred from this Information orotherwise provided by KYOCERA AVX with reference to the use of KYOCERA AVX’s products is given without
regard, and KYOCERA AVX assumes no obligation or liability for the advice given or results obtained.
Although KYOCERA AVX designs and manufactures its products to the most stringent quality and safety
standards, given the current state of the art, isolated component failures may still occur. Accordingly, customer
applications which require a high degree of reliability or safety should employ suitable designs or othersafeguards (such as installation of protective circuitry or redundancies) in order to ensure that the failure of anelectrical component does not result in a risk of personal injury or property damage.
Unless specifically agreed to in writing, KYOCERA AVX has not tested or certified its products, services ordeliverables for use in high risk applications including medical life support, medical device, direct physicalpatient contact, water treatment, nuclear facilities, weapon systems, mass and air transportation control,
flammable environments, or any other potentially life critical uses. Customer understands and agrees that
KYOCERA AVX makes no assurances that the products, services or deliverables are suitable for any highrisk uses. Under no circumstances does KYOCERA AVX warrant or guarantee suitability for any customer
design or manufacturing process.

Although all product–related warnings, cautions and notes must be observed, the customer should not assume
that all safety measures are indicted or that other measures may not be required.

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
121119– microwave single layer ceramic capacitors –Microwave Single Layer Ceramic Capacitors
Table of Contents

Single Layer Ceramic Capacitors (SLC's)

General Information.................................................................................................................................................................................1
How to Order

GH/GB Series – SLC's With & Without Borders

Maxi & Maxi+ X7R Dielectrics....................................................................................................................................................................3
NP0, Temp Compensating & X7R Dielectrics................................................................................................................................................7

GP Series – SLC's With Borders
Single Sided Recessed Metalization. ..........................................................................................................................................................8

GN Series – SLC's With Beveled Edges

Single Sided Recessed Metalization. ..........................................................................................................................................................9

GHB/GH**/GM/GA Series

Dual-Cap & Multi-Cap Arrays.................................................................................................................................................................. 10

ULTRA MAXI Series................................................................................................................................................................................ 14High Reliability Certification Program..................................................................................................................................................... 15
Introduction to Microwave Capacitors

Microwave Parameters.......................................................................................................................................................................... 17
Electrical Model................................................................................................................................................................................... 20
Transmission Lines. ............................................................................................................................................................................. 23
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids........................................................................................................... 25

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.

– microwave single layer ceramic capacitors –Microwave SLCs

Single Layer Ceramic Capacitors (SLC's)
GENERAL INFORMATIONKYOCERA AVX offers a complete line of Single Layer Ceramic (SLC)
Capacitors with dielectric constants ranging from 14 (NP0) to
greater than 30,000 (X7R). Product offerings include standard SLC’s(with & without borders) in all dielectric families. SLC’s with doublesided borders are now available in most dielectrics as indicated inTable I. Also available are Dual-Caps & Multi-Cap Arrays as well as
specialized assemblies for DC Blocking thru 40 GHz.

Standard terminations are Ti/W-Au and Ti/W-Ni-Au. All terminations
are sputtered providing excellent surfaces for wire bonding andexceptional adhesion characteristics. Wire bond tests are performedon every material lot. Bond strength must meet a minimum of 6
and 20 grams for 1 and 2 mil Au wire respectively (as comparedto MIL-STD-883 limits of 3 and 8 grams) before being released to
production (40 bonds with each wire size, zero failures permitted).

Our Maxi & Maxi+ grain boundary barrier layer (GBBL) Single Layer
Ceramics provide a combination of high capacitance, voltage rating
and small footprints unmatched in the industry and are ideally suitedfor broadband bypass applications. Additionally, our “Z” dielectric(also a GBBL material system) offers a cost effective alternative to
Z5U & Y5V dielectrics with a much improved temperature coefficient
over an expanded operating temperature range of –55°C to +125°C.

All parts are capable of meeting or exceeding the environmental &mechanical specifications in Table II.

HOW TO ORDER(see individual sheets for more detail)In addition to an extensive offering of standard catalog devices,
custom designs (and prototypes) are available upon request.
Delivery of samples seldom exceeds two weeks once design
parameters have been established.

GH

02

5

8

102

M

A

6N

Type/
Style

Size

VoltageRatingDielectric CodeCapacitance
Value

CapacitanceTolerance

Termination
Code

Packaging
Code

CUSTOM SLC SOLUTIONSKYOCERA AVX offers a complete line of Single Layer Ceramic(SLC) Capacitors and internally manufactures substrates. As such,
KYOCERA AVX can accommodate virtually any size or thickness
single layer capactor. Higher capacitance values and voltage ratings
are available as well.
Contact KYOCERA AVX directly to discuss your specificrequirements.

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –1

Microwave SLCs

Single Layer Ceramic Capacitors (SLC's)
TABLE I - Dielectric Codes, Types & Product Styles
Dielectric Type& Code
NPO

Temp
Comp

X7R

X7S
X7R

Max. DF (%)*

Dielectric
Constant

Temperature CoefficientA

14+90±30PPM/°C

131

0±30PPM/°C

2**

60

0±30PPM/°C

3

130-750±200PPM/°C

5165-1500±500PPM/°C

4200±7.5% (non-linear)

400

0.25

N/A

7

420

-2000±500PPM/°C

200

0.70

0.30

Y

650

-4700±1500PPM/°C

400

0.30

0.30

6

650

±10% (non-linear)

60

1.50

1.50

J

1,100

+5% to -15% (non-linear)

40

2.50

2.00

Temperature Range-55°C to +125°C-55°C to +125°C

Min Q at 1MHz

1 MHz

1 kHz

10,000

0.01

N/A

660

0.15

N/A

660

0.15

N/A

660

0.15

N/A

400

0.25

N/A

105 Mohms

105 Mohms

F

2,000

±15% (non-linear)

40

2.50

2.00

C

4,000

±15%

25

4.00***

2.00***

G

6,000+10% to -75% max. change (non-linear)

40

2.50

2.00

K

9,000

0% to -92% max. change (non-linear)

25

4.00

2.00

L

16,0000/-92%

30

3.50

2.00

Z

5,000-18,000±22%-55°C to +125°C

30

NA

2.5

104 Mohms

8

20,000±15%

930,000±15%-55°C to +125°C

30

NA

2.5

104 Mohms

0

60,000±15%-55°C to +125°C*Capacitance & DF are measured at 1MHz for values ≤100pF and 1 KHz for capacitance values >100pF**NOTE: Code 2 DIELECTRIC IS NOT RoHS COMPLIANT***DF for the GP, GM, and the GA series with C dielectric is 6.5%

GH SERIESGB SERIESGP SERIESGN SERIESTABLE II

2

IR (Min) 25°C

MIL Reference

Parameter

Method or Paragraph

MIL-STD-883

Bond Strength

2011.7MIL-STD-883

Shear Strength

2019

MIL-PRF-49464

Thermal Shock

4.8.3

MIL-PRF-49464

Voltage Conditioning

4.8.3

MIL-PRF-49464

Temperatue Coefficient

4.8.10MIL-STD-202

Low Voltage Humidity

103 A

MIL-STD-202

Life Test108

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
013123– microwave single layer ceramic capacitors –105 Mohms

Microwave SLCs

GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
GENERAL INFORMATION
Maxi and Maxi+ are both KYOCERA AVX proprietary intergranularbarrier layer dielectric formulations. Both use SrTiO3 as their major
constituent and have dielectric constants exceeding 20,000 and
30,000 respectively. Grain boundary barrier layer (GBBL) capacitors
have been well discussed in various literature sources and, while
simple in principle, their resulting electrical properties are dependent
on a complex combination of materials and process technology.
KYOCERA AVX’s Maxi & Maxi+ dielectrics have the distinctive
properties that are ideal for extremely broadband by-pass
capacitors. This built-in feature gives these products a uniquedisspersive effect that is illustrated in the accompanying curves.
KYOCERA AVX’s ability to control the prerequisite relationships
between materials and process has resulted in dielectrics that makethese Single Layer Ceramics especially well suited for applications
requiring high frequency performance well into the millimeter band.
These GBBL dielectrics are also available in low loss versions thatare comparable to conventional barium titanate based dielectrics.
Performance is likewise similar in that these materials exhibit avery pronounced dip at their resonant frequency. These designs are
excellent choices for applications requiring the combined attributesof very small size and precise cut-off frequencies. Additional
information on these high Q products may be obtained by contacting
the factory or your local KYOCERA AVX representative.
All Maxi & Maxi+ dielectrics exhibit X7R temperature performance of±15% from –55°C to +125°C. Electrical characteristics, as outlined
in MIL-C-49464, will meet those specified for Class II dielectrics,
rather than the less stringent Class IV, which typically describes
GBBL dielectrics.

Sample kits are available
MAXI KIT Catalog # KITSLCK20KSAMPL includes 10 each:GH0158101MA6N, GH0258221MA6N, GH0258471MA6N,
GH0358102MA6N, GH0458182MA6N
MAXI+ KIT Catalog # KITSLCK30KSAMPL includes 10 each:GH0159331MA6N, GH0259751MA6N, GH0359152MA6N,
GH0459302MA6N, GH0559602MA6N

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0004 | Rev 1– microwave single layer ceramic capacitors –3

Microwave SLCs

GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics

DIMENSIONS: inches (millimeters)
GH05
GH06

Case Size

GH01

GH02

GH03

GH04

(L & W) Length & Width

0.015 ± 0.005(0.381 ± 0.127)

0.025 ± 0.005(0.635 ± 0.127)

0.035 ± 0.005(0.889 ± 0.127)

0.050 ± 0.010(1.270 ± 0.254)

Cap (pF)

Cap (pF)

Cap (pF)(T) Thickness

0.070 ± 0.010(1.780 ± 0.254)

0.090 ± 0.010(0.2.29 ± 0.254)

0.007 ± 0.002 (0.178 ± 0.051)
Cap (pF)

Cap (pF)

Cap (pF)

Dielectric

K

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Z

5000 - 18000

50

200

60

470

230

800

460

2000

900

3000

1500

4700

Maxi

20,000

68

330

330

750

750

1200

1200

2700

2700

4700

4700

8200

Maxi +

30,000

330

390

390

1000

1000

1800

1800

3300

3300

6800

6800

10000

Case Size

GB01

GB02

GB03

GB04

GB05

GB06

(L & W) Length & Width

0.015 ± 0.005(0.381 ± 0.127)

0.025 ± 0.005(0.635 ± 0.127)

0.035 ± 0.005(0.889 ± 0.127)

0.050 ± 0.010(1.270 ± 0.254)

0.070 ± 0.010(1.780 ± 0.254)

0.090 ± 0.010(0.2.29 ± 0.254)(T) Thickness

0.007 ± 0.002 (0.178 ± 0.051)(B) Border

0.002 ± 0.001 (0.051 ± 0.025)
Cap (pF)

Cap (pF)

Cap (pF)

Cap (pF)

Cap (pF)

Cap (pF)

Dielectric

K

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Z

5000 - 18000

45

200

50

470

200

800

430

2000

840

3000

1400

4700

Maxi

20,000

51

220

220

560

560

1000

1000

2200

2200

4700

4700

8200

Maxi +

30,000

220

330

330

820

820

1500

1500

2700

2700

6800

6800

10000

HOW TO ORDER
GH

02

5

8

102

M

A

6N

Type CodeCase Size

Working
Voltage
Code*

Dielectric
Code

Capacitance
Value

CapacitanceTolerance

Termination
Code

Packaging
CodeGH = w/o borders
GB = w/ borders

01
02
03
04
05
06

5 = 50 VDC

Z = Z Dielectric(k = 2.5k - 18k)
8 = Maxi(k = 20,000)
9 = Maxi+(k = 30,000)

EIA Cap
Code in pF

K = ±10%M = ±20%
Z = +80% -20%

A = Au6N = Waffle Pack(100 μ-in min)over
Ti/W (1000 Å nom)
also available
N = Ti/W-Ni-Au*Other Voltages available. Contact Factory for details.

4

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0004 | Rev 1– microwave single layer ceramic capacitors –Microwave SLCs

GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
PERFORMANCE CURVESS21 FORWARD TRANSMISSION
Capacitance = 220 pF Q = 50 @ 1 MHz
Size: L = .017" W = .017" T = .007"
LOG MAG< REF = -20 dB

10 dB/DIV
Marker 1-12.6 dB @ 51 MHz
Marker 2-17.6 dB @ 2.06 GHz

1Marker 3-22.0 dB @ 12.86 GHz
2

3
4

0.05

Marker 4-21.6 dB @ 25.08 GHz

26.5
FREQUENCY - GHz

Capacitance = 470 pF Q = 50 @ 1 MHz
Size: L = .024" W = .024" T = .007"
LOG MAG< REF = -24 dB

5 dB/DIV
Marker 1-17.4 dB @ 51 MHz
Marker 2-22.4 dB @ 2.06 GHz

1Marker 3-27.9 dB @ 8.98 GHz
42Marker 4-21.4 dB @ 25.07 GHz

3

0.05

26.5
FREQUENCY - GHz

Capacitance = 1000 pF Q = 50 @ 1 MHz
Size: L = .035" W = .035" T = .007"
LOG MAG< REF = -30 dB

5 dB/DIV
Marker 1-24.8 dB @ 51 MHz
Marker 2-30.5 dB @ 1.71 GHz

4Marker 3-33.1 dB @ 3.25 GHz

1

2

3

Marker 4-19.1 dB @ 18.25 GHz

0.05

26.5
FREQUENCY - GHz

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0004 | Rev 1– microwave single layer ceramic capacitors –5

Microwave SLCs

GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
PERFORMANCE CURVES
S21 INSERTION LOSS
Capacitance = 220 pF Q = 50 @ 1 MHz
Size: L = .017" W = .017" T = .007"
LOG MAG< REF = -.02 dB.10 dB/DIV
Marker 1.00 dB @ 50 MHz
Marker 2-.013 dB @ 1.71 GHz
Marker 3-.022 dB @ 11.33 GHz

31

2

Marker 4-.023 dB @ 18.25 GHz

4

0.05

26.5
FREQUENCY - GHz

Capacitance = 470 pF Q = 50 @ 1 MHz
Size: L = .024" W = .024" T = .007"
LOG MAG< REF = -.02 dB.10 dB/DIV
Marker 1.018 dB @ 50 MHz
Marker 2-.040 dB @ 6.75 GHz
Marker 3-.035 dB @ 11.33 GHz1

42

Marker 4-.078 dB @ 20.36 GHz

3

0.05

26.5
FREQUENCY - GHz

Capacitance = 1000 pF Q = 50 @ 1 MHz
Size: L = .035" W = .035" T = .007"
LOG MAG< REF = -.02 dB.10 dB/DIV
Marker 1.00 dB @ 50 MHz
Marker 2-.059 dB @ 6.78 GHz

1Marker 3-.018 dB @ 11.33 GHz

32Marker 4-.213 dB @ 20.36 GHz

4

0.05

26.5
FREQUENCY - GHz

6

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0004 | Rev 1– microwave single layer ceramic capacitors –Microwave SLCs

GH Series – SLC's Without Borders
NP0, Temp Compensating & X7R Dielectrics
GENERAL INFORMATION
In addition to the standard SLC products shown below, KYOCERA AVX is now able to offer borderedversions in these same dielectric families as detailed on the opposing page utilizing micron resolution
photolithography and etching processes.
With borders precisely defined, these parts will be beneficial in those applications that require enhanced
visual definition during placement and wire bonding. Additionally, bordered devices have proven effective in
reducing susceptibility to conductive epoxy electrode bridging.
Custom designs to meet stringent circuit trace width matching requirements are available upon request.

GH SERIES: SINGLE LAYER CAPACITORS WITHOUT BORDERS
NP0, TEMPERATURE COMPENSATING & X7R DIELECTRICS(L) Length / (W) Width(T) Thickness

Dielectric

GH160.015±0.003 (0.381±0.076)

Cap (pF)
Max

Min

A
1
2
3
5
4
7
Y
6
J
F
C
G
K
L

0.06
0.2
0.3
0.6
0.7
0.8
1.5
2.7
2.7
4.7
8.2
18
27
36
62

0.2
0.5
1
2
2.7
3
5.6
10
10
18
33
55
91
130
220

Tol

Cap (pF)
Max

Min

A
A,B
B,C
C,D
C,D
C,D
D,K,M
K,M
K,M
K,M
K,M
K,M
M
M
M

0.08
0.2
0.4
0.8
1
1.2
2.2
4.3
4.3
6.8
13
30
39
56
91

0.2
0.5
1.1
2.2
2.7
3.6
6.2
11
11
18
36
75
100
130
20

GH50
0.050±0.010 (1.27±0.254)(L) Length / (W) Width(T) Thickness
Dielectric
A
1
2
3
5
4
7
Y
6
J
F
C
G
K
L

GH18
GH26
0.018±0.003 (0.457±0.076)
0.025±0.005 (0.635±0.127)
0.0045-0.012 (0.114-0.305)

Cap (pF)
Max
2
4.7
9.1
20
24
30
51
100
100
160
300
600
910
1200
2200

Min
0.6
1.5
2.7
5.6
6.8
8.2
15
27
27
47
82
180
240
360
620

Tol
A,B,C
B,C,D
C,D
D,G,J,K,M
D,G,J,K,M
G,J,K,M
G,J,K,M
G,J,K,M
G,J,K,M
J,K,M
J,K,M
J,K,M
M
M
M

Min
1.3
3
6.2
12
15
20
33
62
62
100
220
430
560
910
1500

Tol

A
A,B
A,B,C,D
B,C,D
C,D
C,D
D,J,K,M
D,J,K,M
D,J,K,M
J,K,M
J,K,M
J,K,M
M
M
M

Min
0.2
0.4
0.8
1.5
2
2.4
4.3
7.5
7.5
13
24
56
75
110
180

Cap (pF)
Max
0.4
1
2
4.3
5.6
6.8
12
22
22
36
68
150
200
270
510

GH70
0.070±0.010 (1.78±0.254)
0.0045-0.012 (0.114-0.305)
Cap (pF)
Max
Tol
3.8
A,B,C
8.2
B,C,D
16
D,G,J,K,M
36
G,J,K,M
43
G,J,K,M
55
G,J,K,M
91
G,J,K,M
180
G,J,K,M
180
G,J,K,M
300
J,K,M
550
J,K,M
1000
J,K,M
1600
M
2200
M
3900
M

GH35
0.035±0.005 (0.889±0.127)

Tol

Min

A,B
A,B,C
B,C,D
C,D
C,D
C,D
D,J,K,M
J,K,M
J,K,M
J,K,M
J,K,M
J,K,M
M
M
M

0.4
0.7
1.5
3
3.9
4.7
8.2
15
15
27
47
110
150
220
390

0.9
2
3.9
8.2
11
13
22
43
43
75
130
250
390
510
1000

Tol

A,B,C
A,B,C,D
B,C,D
C,D
D,J,K,M
D,J,K,M
J,K,M
J,K,M
J,K,M
J,K,M
J,K,M
J,K,M
M
M
M

GH90
0.090±0.010 (2.29±0.254)
Cap (pF)
Max
5.6
13
25
56
68
82
150
270
270
470
820
1700
2400
3300
6200

Min
2.2
5.1
10
22
27
33
56
110
110
180
330
750
1000
1500
2400

Tol
A,B,C
C,D
G,J,K,M
G,J,K,M
G,J,K,M
G,J,K,M
G,J,K,M
G,J,K,M
G,J,K,M
J,K,M
J,K,M
J,K,M
M
M
M

DIMENSIONS: inches (millimeters)

HOW TO ORDER
GH

16

5

A

6R8

M

N

6N

Type Code

Case
Code

Working
Voltage
Code

Dielectric
Code

Capacitance
Value

CapacitanceTolerance

Termination
Code

Packaging
CodeGH = w/o borders

Cap (pF)Max

5 = 50WVDC
1 = 100WVDC

See Table

EIA Cap Code in pF
First two digits =significant figures or“R” for decimal place.
Third digit = numberof zeros or after “R”
significant figures.

A = ±0.05pF
B = ±0.1pF
C = ±0.25pF
D = ±0.5pF
G = ±2%J = ±5%K = ±10%M = ±20%

N = Ti/W-Ni-Au
Au (100μ-in min)overNi (1500Å nom)over
Ti/W (500Å nom)
A = TiW-Au

6N = Waffle Pack

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0004 | Rev 1– microwave single layer ceramic capacitors –7

Microwave SLCs

GP Series – SLC's With Borders
Single Sided Recessed Metalization
Thicknes s(T )Widt h(W )Terminatio n
Area

Lengt h(L)

Border (B)NOTE: Border one side only

GP SERIES SINGLE RECESSED METALIZATION SLCs – have been designed to minimize potential shorting resulting from epoxy or solder attachments. Contact KAVX
for further information.

APPLICATIONSFEATURES• Microwave Integrated Circuits• Automated MIC Construction• Chip and Wire Construction• Matching and Filtering Circuits• Bypass and Coupling• Capacitance Range: 0.05 pF to 1800 pF• Exposed Borders for: Automated Visual Equipment, Solder Resist Area to
Reduce Shorts• Operating Frequency up to 100 GHz
Case Size

GP15

GP20

GP25

GP30

GP35

GP40

GP50

Dimensions(L&W nom.)

0.015 (0.381)± 0.002 (0.0508)

0.020 (0.508)± 0.002 (0.0508)

0.025 (0.635)± 0.002 (0.0508)

0.030 (0.762)± 0.002 (0.0508)

0.035 (0.889)± 0.002 (0.0508)

0.040 (1.016)± 0.002 (0.0508)

0.050 (1.270)± 0.002 (0.0508)

Recessed
Metallization (LW)

0.11 (0.279)+ 0 / - 0.003 (0.0762)

0.016 (0.406)+ 0 / - 0.003 (0.0762)

0.021 (0.533)+ 0 / - 0.003 (0.0762)

0.026 (0.660)+ 0 / - 0.003 (0.0762)

0.031 (0.787)+ 0 / - 0.003 (0.0762)

0.036 (0.914)+ 0 / - 0.003 (0.0762)

0.046 (1.168)+ 0 / - 0.003 (0.0762)

Min. Thickness (T)0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

Max. Thickness (T)0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Dielectric

K

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

A

14

0.06

0.1

A

0.2

0.2

A, B

0.2

0.3

A, B

0.3

0.4

A, B

0.4

0.6

A, B

0.5

0.9

B, C

0.8

1.3

B, C

1

31

0.2

0.2

A, B

0.3

0.4

B, C

0.4

0.7

B, C

0.6

1.0

B, C, D

0.8

1.5

C, D

1.1

2.0

C, D

1.8

3.0

C, D

2

60

0.3

0.4

B, C

0.5

0.8

C, D

0.8

1.3

C, D

1.2

2.0

C, D

1.6

3

C, D

2.2

3.9

C, D

3.6

6.2

D, K, M

3

130

0.6

0.9

C, D

1.0

1.8

C, D

1.8

3

D, M

2.4

4.3

D, K, M

3.6

6.2

D, K, M

4.7

8.2

K, M

7.5

13

K, M

5

165

0.7

1.2

C, D

1.3

2.2

D

2.2

3.9

D, M

3.3

5.6

D, K, M

4.3

7.5

K, M

5.6

10

K, M

9.1

16

K, M

4

200

0.9

1.3

D, M

1.5

2.7

D, M

2.7

4.7

M

3.9

6.8

K, M

5.1

9.1

K, M

6.8

13

K, M

11

20

K, M

7

420

1.5

2.4

D, M

2.7

4.7

M

4.7

8.2

M

6.8

12

K, M

9.1

16

K, M

12

22

K, M

20

36

K, M

Y

650

2.7

4.7

M

4.7

9.1

M

8.2

15

M

12

22

K, M

18

30

K, M

22

39

K, M

36

62

K, M

6

650

2.7

4.7

M

4.7

9.1

M

8.2

15

M

12

22

K, M

18

30

K, M

22

39

K, M

36

62

K, M

J

1100

4.7

7.5

M

8.2

15

M

15

24

M

22

36

K, M

30

51

K, M

39

68

K, M

62

110

K, M

F

2000

9.1

13

M

16

27

M

27

47

M

39

68

K, M

51

91

K, M

68

120

K, M

110

200

K, M

C

4000

20

33

M

36

62

M

56

100

M

91

150

K, M

120

200

K, M

160

270

K, M

270

430

K, M

G

6000

27

43

M

47

82

M

75

130

M

120

200

M

160

270

M

220

360

M

330

620

M

K

9000

39

56

M

68

110

M

120

180

M

180

270

M

240

390

M

330

510

M

510

820

M

L

16000

68

100

M

120

180

M

200

300

M

300

470

M

390

620

M

510

820

M

820

1800

M

HOW TO ORDER
GP

15

1

A

0R5

B

N

6N

Type Code

Case
Code

Rated Voltage
Code

Dielectric
Code

Capacitance
Value

CapacitanceTolerance

Termination
Code

PackagingCode

1 = 100WVDC

See Table

EIA Cap Code in pF
First two digits =significant figures or“R” for decimal place.
Third digit = numberof zeros or after “R”
significant figures.

8

A = ±0.05pF
B = ±0.1pF
C = ±0.25pF
D = ±0.5pF
G = ±2%J = ±5%K = ±10%M = ±20%

N = Ti/W-Ni-Au
Au (100μ-in min)overNi (1500Å nom)over
Ti/W (500Å nom)
A = TiW-Au

6N = Waffle Pack

NOTE: "2" Dielectric is not RoHS Compliant

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0007 | Rev 1– microwave single layer ceramic capacitors –Microwave SLCs

GN Series – SLC's With Beveled Edges
Single Sided Recessed Metalization

L1
Ref

Termination
Area

Case
Size
S
T
U
X
Y
Z

L

W1
Ref

T

Ref.
W1 or L1.014 (.356).019 (.483).030 (.762).045 (1.14).065 (1.65).085 (2.16)

W
T depends upon capacitance value.
The GN Series – The beveled edges featured in the GN Series minimize the potential for cracking due to mechanical or thermal shock. The longer path along the bevelededge also provides additional protection against arc-over.

SELECTION GUIDE
Case Size

GN18

GN25

GN35

GN50

GN70

GN90

Dimensions(L&W nom.)

0.018 (0.457)± 0.003 (0.076)

0.025 (0.635)± 0.005 (0.127)

0.035 (0.889)± 0.005 (0.127)

0.050 (1.27)± 0.010 (0.254)

0.070 (1.78)± 0.010 (0.254)

0.090 (2.29)± 0.010 (0.254)

Min. Thickness (T)0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

0.0045 (0.114)

Max. Thickness (T)0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Dielectric

K

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

A

14

0.1

0.2

A, B

0.2

0.4

A, B

0.4

0.9

A, B, C

0.6

2.0

B, C

1.3

3.6

B, C

2.4

5.6

B, C

1

31

0.3

0.4

A, B, C

0.4

1.0

B, C

0.8

1.8

B, C, D

1.3

4.3

C, D

3.0

8.2

C, D

5.1

13

D, J, K, M

2

60

0.5

0.9

B, C, D

0.8

2.0

C, D

1.5

3.9

C, D

2.7

9.1

D, J, K, M

6.2

16

D, J, K, M

1024

G, J, K, M

3

130

0.9

2

C, D

1.5

4.3

D, K, M

3.3

8.2

D, J, K, M

5.6

18

J, K, M

1233

J, K, M

22

56

G, J, K, M

5

165

1.2

2.4

C, D

2

5.6

D, K, M

4.3

10

D, J, K, M

7.5

24

J, K, M

15

43

J, K, M

27

68

G, J, K, M

4

200

1.5

3

D, K, M

2.4

6.8

D, K, M

5.1

12J, K, M

9.1

30

J, K, M

20

51

J, K, M

33

82

G, J, K, M

7

420

2.4

5.6

K, M

4.3

12

K, M

9.1

22

J, K, M

15

47

J, K, M

33

91

J, K, M

56

150

G, J, K, M

Y

650

4.7

10

K, M

7.5

22

K, M

16

39

J, K, M

27

91

J, K, M

62

160

J, K, M110

270

G, J, K, M

6

650

4.7

10

K, M

7.5

22

K, M

16

39

J, K, M

27

91

J, K, M

62

160

J, K, M110

270

G, J, K, M

J

1100

7.5

15

K, M

15

36

K, M

27

68

J, K, M

47

160

J, K, M

100

300

J, K, M

180

470

J, K, M

F

2000

15

27

K, M

27

68

K, M

51

120

J, K, M

91

300

J, K, M

200

510

J, K, M

330

820

J, K, M

C

4000

33

68

K, M

56

150

K, M

110

270

J, K, M

200

680

J, K, M

430

1200

J, K, M

750

1800

J, K, M

G

6000

47

91

M

75

180

M

150

360

M

270

820

M

560

1600

M

1000

2400

M

K

9000

62

120

M

110

270

M

220

510

M

390

1200

M

820

2200

M

1500

3300

M

L

16000

110

220

M

180

510

M

390

910

M

680

2200

M

1500

3900

M

2400

6200

M

HOW TO ORDER
GN

25

1

J

300

M

A

6N

Type Code

Case
Code
18
25
35
50
70
90

Rated
Voltage
Code

Dielectric
Code

Capacitance
Value

CapacitanceTolerance

Termination
Code

PackagingCode

GN = Beveled Edge

1 = 100WVDC

See Table

See Table

A = ±0.05pF
B = ±0.1pF
C = ±0.25pF
D = ±0.5pF
G = ±2%J = ±5%K = ±10%M = ±20%

N = Ti/W-Ni-Au
Au (100μ-in min)overNi (1500Å nom)over
Ti/W (500Å nom)
A = TiW-Au

6N = Waffle Pack

NOTE: "2" Dielectric is not RoHS Compliant
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0008 | Rev 1– microwave single layer ceramic capacitors –9Microwave SLCs

GHB/GH** Series
Dual-Cap & Multi-Cap Arrays
GENERAL INFORMATION
Multi-Cap Arrays can be manufactured with 2, 3, 4, 5 or 6 capacitors on one single layer ceramic
substrate. These arrays are available in our Maxi and Maxi+ family of GBBL dielectrics and offer a broad
range of capacitance values as detailed in the accompanying tables.
These arrays have advantages over single components in the form of smaller overall size, reduced
handling and lower average unit costs. They are, therefore, a good choice for broad-band bypass
applications where circuit board layouts can utilize these configurations.
The designs, shown along with the range of maximum capacitance values, represent typical parts. Since
most applications require specific form factors, custom designs on all multi-cap arrays are available tomeet individual customer requirements and are offered with quick turn around. No charge samples are
generally shipped within two weeks of the design sign-off.
Both standard and custom designs are available with borders for those applications where conductive epoxy run up exposes the parts to thepossibility of shorting. Maximum capacitance per pad for bordered devices will be necessarily somewhat lower than shown on the adjacentpage.
2 and 3 cap arrays can be designed with different capacitance values per pad in circuit designs where identical values pad-to-pad are, for one
reason or another, not altogether suitable.
Additionally, the dual-caps are available to match micro strip widths as dictated by circuit considerations. When mounted with the individual
pads down, the need for wire bonding is eliminated. The maximum capacitance values indicated on the typical designs shown represent
capacitance per pad. Mounted with both pads down puts two capacitors in series. The effective series capacitance (CEff), can be determinedby 1/CEff = 1/C1 + 1/C2.
Contact the factory or your local KYOCERA AVX representative.

HOW TO ORDER
GH

B

5

5

8

102

P

A

6N

Type CodePackaging CodeArray Code

6N = Antistatic
Waffle Pack

B=2
C=3
D=4

E=5
F=8

Termination Code
A = Au (100 μ-in min)over Ti/W(1000 Å nom) alsoavailable
N = Ti/W-Ni-Au

Size Code2 = .020" W
Y = .025" W
3 = .030" W

4 = .040" W
5 = .050" W
S = Special

Cap Tolerance

Working Voltage CodeP = +100% -0%
Z = +80% -20%
Dual-Caps
M = ±20% available

5 = 50VDC

Dielectric Code
8 = Maxi
9 = Maxi+

Cap Code
EIA Cap Code in pF
DUAL-CAP

MULTI-CAP

T

W

G

G

W

T
L

L

10

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0003 | Rev 1– microwave single layer ceramic capacitors –Microwave SLCs

GHB/GH** Series
Dual-Cap & Multi-Cap Arrays
GHB SERIES: DUAL CAP SINGLE LAYER CAPACITORSDIMENSIONS: inches (millimeters)

GHB2

GHBY

(L) Length.050±.010(1.27±.254)(W) Width.020+.000,-.003(.508+.000,-.076)

GHB3

GHB5

.040+.000,-.003(1.02+.000,-.076).050+.000,-.003(1.27+.000,-.076).080±.010(2.03±.254).025+.000,-.003(.635+.000,-.076).030+.000,-.003(.762+.000,-.076)(T) Thickness.008±.002(.203±.051)(G) Gap.005 min/.010 max (.127/.254)

Cap/Pad (pF)

GHB4

Cap/Pad (pF)

Cap/Pad (pF)

Cap/Pad (pF)

Cap/Pad (pF)

Dielectric

Min

Max

Min

Max

Min

Max

Min

Max

Min

Z

25

220

54

500

65

600

88

770

100

Max
960

Maxi

200

350

430

780

520

940

700

1200

870

1500

Maxi+

270

450

600

1000

730

1200

980

1500

1200

1900

GH-SERIES: MULTI-CAP ARRAY SINGLE LAYER CAPACITORSDIMENSIONS: inches (millimeters)

GH*2

GH*Y

Length - Code (C) - 3 Caps

.065±.010(1.65±.254)

Length - Code (D) - 4 Caps

.090±.010(2.29±.254)

Length - Code (E) - 5 Caps

.115±.010(2.92±.254)

Length - Code (F) - 6 Caps

.140±.010(3.56±.254).020±.005(.508±.127)(W) Width.025±.005(.635±.127)

GH*3

GH*6

.030±.005(.762±.127).040±.005(1.02±.127).030x.015(.762x.381).040x.015(1.02x.381).008±.002(.203±.051)(T) Thickness.020x.015(.508x.381)

Pad Size (nominal).025x.015(.635x.381)(G) Gap (All Arrays).005 min/.010 max (.127/.254)

Cap/Pad (pF)

Cap/Pad (pF)

Cap/Pad (pF)

Cap/Pad (pF)

Dielectric

Min

Max

Min

Max

Min

Max

Min

Z

20

120

25

150

30

180

40

250

Maxi

140

200

170

250

210

300

280

400

Maxi+

200

300

250

370

300

450

400

600

Max

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0003 | Rev 1– microwave single layer ceramic capacitors –11

Microwave SLCs

GM Series – TWIN CAP® SLC's
Dual Cap Arrays
G

G

C1

L1

C2

L1
T

W
L

Electrode (termination)

C1

C2

Equivalent Series=
Capacitance

C1

C2

=

2

2

Terminations C1 and C2 may be mounted directly to the microstrip
line or with the top electrode (termination) facing down in the ﬂip
chip conﬁguration.

The unique configuration of the GM Series Twin Cap® provides a wide range of capacitancevalues with a 100 WVDC rating in a low profile pack-age. The low insertion loss and extremely
high self-resonant frequencies of the GM Series make it ideal for RF / microwave and millimeterwave applications.

SLC

Land

Substrate

SELECTION GUIDELand

Ground Plane

Case Size

GM15

GM20

GM25

GM30

GM35

GM40

GM50

Width (W)

0.015 (0.381)± 0.003 (0.076)

0.020 (0.508)± 0.003 (0.076)

0.025 (0.635)± 0.003 (0.076)

0.030 (0.762)± 0.003 (0.076)

0.035 (0.889)± 0.003 (0.076)

0.040 (1.016)± 0.003 (0.076)

0.050 (1.270)± 0.003 (0.076)

Length (L)0.040 (1.016) max.

0.050 (1.270) max.

0.080 (2.032) max.

0.080 (2.032) max.

0.080 (2.032) max.

0.080 (2.032) max.

0.080 (2.032) max.

Gap Width (G)0.008 (0.203)

0.008 (0.203)

0.020 (0.508)

0.020 (0.508)

0.020 (0.508)

0.020 (0.508)

0.020 (0.508)

Min. Thickness (T)0.005 (0.127)

0.005 (0.127)

0.005 (0.127)

0.005 (0.127)

0.006 (0.152)

0.006 (0.152)

0.006 (0.152)

Max. Thickness (T)0.010 (0.254)

0.010 (0.254)

0.010 (0.254)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

0.012 (0.305)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Capacitance (pF)

Dielectric

K

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

Min.

Max.

Tol.

A

14

-

-

-

0.05

0.08

B,C

0.08

0.1

B,C

0.08

0.1

B

0.1

0.2

B

0.1

0.2

B

0.2

0.2

B

1

31

0.05

0.1

B,C

0.1

0.1

B,C

0.2

0.2

B,C

0.2

0.3

B

0.3

0.4

B

0.3

0.5

B

0.3

0.6

B

2

60

0.2

0.2

B,C

0.2

0.3

B,C

0.4

0.6

B,C

0.4

0.6

B

0.5

0.8

B

0.6

1

C

0.8

1.2

C

3

130

0.3

0.4

B,C

0.4

0.8

C,D

0.8

1.5

C,D

0.8

1.5

C

1

1.8

C

1.2

2.2

C,D

1.5

3

D

4

200

0.5

0.6

C,D

1

1.2

C,D

1.8

2.2

D

1.8

2.2

D

2.2

3.3

D

2.7

3.6

D

3.3

4.7

D

7

420

0.8

1.2

C,D

1.5

2.2

D

2.7

4.7

M

2.7

4.7

M

3.6

5.6

M

3.9

6.8

M

5.1

8.2

K,M

Y

650

1.5

1.8

C,D

2.7

3.9

M

5.1

6.8

M

5.1

6.8

M

6.8

10

M

8.2

12

M

10

15

K,M

6

650

1.5

1.8

C,D

2.7

3.9

M

5.1

6.8

M

5.1

6.8

M

6.8

10

M

8.2

12

M

10

15

K,M

J

1100

2.2

3.3

M

4.7

6.8

M

8.2

12

M

8.2

12

M

12

15

M

15

18

M

18

22

M

F

2000

3.6

6.8

M

8.2

12

M

15

22

M

15

22

M

18

30

M

20

33

M

27

39

M

C

4000

8.2

12

M

15

22

M

27

51

M

27

51

M

33

68

M

39

82

M

47

100

M

G

6000

15

18

M

30

39

M

56

62

M

56

68

M

68

82

M

100

120

M

120

130

M

HOW TO ORDER
GM

25

1

J

200

M

A

6N

Type Code

Case
Code
15
20
25
30
35
40

Rated
Voltage
Code

Dielectric
Code

Capacitance
Value

CapacitanceTolerance

Termination
Code

Packaging
Code

GM = TWIN CAP®

12

1 = 100WVDC

See Table

See Table

A = ±0.05pF
B = ±0.1pF
C = ±0.25pF
D = ±0.5pF
G = ±2%J = ±5%K = ±10%M = ±20%

N = Ti/W-Ni-Au
Au (100μ-in min)overNi (1500Å nom)over
Ti/W (500Å nom)
A = TiW-Au

6N = Waffle Pack

NOTE: "2" Dielectric is not RoHS

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0003 | Rev 1– microwave single layer ceramic capacitors –Microwave SLCs

GA Series – Multiple Pad SLC's
Multi-Cap Arrays.0 08 (.2 03) ty p.

L1.0 02 (.0 51) ty p.

WLT.0 06 (.1 52) m in. .0 12 (.3 05) m ax.

GA SERIES MULTIPLE PAD SLCs are ideal for circuits such as MMIC devices requiring multiple capacitance applications, i.e., bypassing and bias circuits. The GA
Multicaps in the Selection Guide below are listed using KAVX’s GA and K dielectrics, with a pad length of .015 (.380). However, other array designs are possible.
Please consult factory.

SELECTION GUIDE
Style

Total Width (W)+- 0.003 (0.076)

Total Length (L)+- 0.005 (0.127)

W x L Per Pad

Cap Value (pF)C

K

Number of
Pads

Part Number "C"

Part Number "K"C

0.015 (0.381)

0.065 (1.650)

0.015 (0.381) X 0.015 (0.381)

33

70

3

GACC1C990MN6N

GACC1K211MN6N

D

0.020 (0.508)

0.065 (1.650)

0.020 (0.508) x 0.015 (0.381)

40

90

3

GACD1C121MN6N

GACD1K271MN6N

E

0.025 (0.635)

0.065 (1.650)

0.025 (0.635) x 0.015 (0.381)

50

110

3

GACE1C151MN6N

GACE1K331MN6N

E

0.025 (0.635)

0.090 (2.290)

0.025 (0.635) x 0.015 (0.381)

50

110

4

GADE1C201MN6N

GADE1K441MN6N

F

0.030 (0.762)

0.065 (1.650)

0.030 (0.762) x 0.015 (0.381)

60

130

3

GACF1C181MN6N

GACR1K391MN6N

F

0.030 (0.762)

0.090 (2.290)

0.030 (0.762) x 0.015 (0.381)

60

130

4

GADF1C241MN6N

GADF1K521MN6N

G

0.035 (0.889)

0.065 (1.650)

0.035 (0.889) x 0.015 (0.381)

80

140

3

GACG1C241MN6N

GACG1K421MN6N

G

0.035 (0.889)

0.090 (2.290)

0.035 (0.889) x 0.015 (0.381)

80

140

4

GADG1C321MN6N

GADG1K561MN6N

G

0.035 (0.889)

0.135 (3.430)

0.035 (0.889) x 0.015 (0.381)

80

140

6

GAFG1C481MN6N

GAFG1K841MN6N

H

0.040 (1.020)

0.065 (1.650)

0.040 (1.020) x 0.015 (0.381)

90

150

3

GACH1C271MN6N

GACH1K451MN6N

H

0.040 (1.020)

0.090 (2.290)

0.040 (1.020) x 0.015 (0.381)

90

150

4

GADH1C361MN6N

GADH1K601MN6N

H

0.040 (1.020)

0.135 (3.430)

0.040 (1.020) x 0.015 (0.381)

90

150

6

GAFH1C541MN6N

GAFH1K901MN6N

I

0.045 (1.140)

0.065 (1.650)

0.045 (1.140) x 0.015 (0.381)

100

200

3

GACI1C301MN6N

GACI1K601MN6N

I

0.045 (1.140)

0.090 (2.290)

0.045 (1.140) x 0.015 (0.381)

100

200

4

GADI1C401MN6N

GADI1K801MN6N

I

0.045 (1.140)

0.135 (3.430)

0.045 (1.140) x 0.015 (0.381)

100

200

6

GAFI1C601MN6N

GAFI1K122MN6N

J

0.050 (1.270)

0.065 (1.650)

0.050 (1.270) x 0.015 (0.381)

110

220

3

GACJ1C331MN6N

GACJ1K661MN6N

J

0.050 (1.270)

0.090 (2.290)

0.050 (1.270) x 0.015 (0.381)

110

220

4

GADJ1C441MN6N

GADJ1K881MN6N

J

0.050 (1.270)

0.135 (3.430)

0.050 (1.270) x 0.015 (0.381)

110

220

6

GAFJ1C661MN6N

GAFJ1K132MN6N

Thickness (T): .006 (0.15) min.; .012 (0.30) max.
Gap between pads: .008 (.203) typical.
Note: Other sizes and configurations are available using any dielectric in this catalog.

HOW TO ORDER
GA

F

H

1

C

154

M

A

6N

Type Code

Array
Code
C=3
D=4
F=6

Style
See Table

Rated
Voltage
Code

Dielectric
Code
C
K

Capacitance
Value

Tolerance

Termination
Code

Packaging
Code

GA = Cap Array

1 = 100WVDC

See Table

A-M
TX

N = Ti/W-Ni-Au
Au (100μ-in min)overNi (1500Å nom)over
Ti/W (500Å nom)
A = TiW-Au

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0003 | Rev 1– microwave single layer ceramic capacitors –6N = Waffle Pack13

Microwave SLCsULTRA MAXI Series

The Ultra Maxi Series is the latest addition to the KYOCERA AVX family of proprietary highk, inter-granular barrier layer dielectic systems. This series is similar to our Maxi & Maxi+
product offerings, but with the notable difference that the dielectric constant has been
increased to 60,000 - double the previous high for our industry leading GBBL formulations.
These new Single Layer Ceramic Capacitors, with X7R TCC and rated at 25VDC (-55°C
thru +125°C), set a new standard for circuit miniturization. On average, the required board
mounting area will be reduced by approximately two-thirds when compared to an equivalentcapacitance value for our Maxi+ series. The Ultra Maxi series offers an ideal solution forbroadband bypass applications where high performance and the smallest footprint are theprimary considerations.
The Ultra Maxi Series is RoHS compliant - as are all KYOCERA AVX SLC products.
Terminations (Au over Ti/W) provide an excellent wire bonding surface and are compatible
with conductive epoxy and Au/Sn eutectic solder attach.
Samples and custom configurations are available on request.
inches (millimeters)
Style
GD10
GD15
GD20
GD25
GD30
GD35
GD40
GD45
GD50
GD55

Length x Width
Capacitance (pF)Min
Max±.003" (0.076).010 x .010 (.254 x .254)
200
300.015 x .015 (.381 x .381)
300
600.020 x .020 (.508 x .508)
550
1000.025 x .025 (.635 x .635)
900
1500.030 x .030 (.762 x .762)
1400
2000
.035 x .035 (.889 x .889)
1900
2700
.040 x .040 (1.016 x 1.016)
2600
3500
.045 x .045 (1.143 x 1.143)
3300
4400
.050 x .050 (1.270 x 1.270)
4200
5400
.055 x .055 (1.397 x1.397)
5100
6500
Thickness: .0065±.001 (.165±.025)

Sample kits are available
ULTRA MAXI KIT Catalog # KITSLCK60KSAMPL
includes 10 each:
GD1030301ZAW, GD1530601ZAW,GD2030102ZAW, GD3030202ZAWCapacitance Change with Temperature
8

6

Typical Delta Cap (%)

4

2

0

-2

-4

-6

-8
-70

HOW TO ORDER

14

-60

-50

-40

-30

-20

-10

0

10

20

30

40

50

60

70

80

90

100 110 120 130 140

Temperature (°C)

GD

20

3

Type
Code

L&W (mils)

Rated
Voltage

3 = 25 VDC

0

102

Z

A

6N

Dielectric

Capacitance

CapacitanceTolerance

Termination

Packaging

0 = Ultra Maxi(k = 60,000)

EIA Cap
Code in pF

M = ±20%
Z = +80 -20%

Au (100 μ-in)
overTi/W (1000Å)

Antistatic
Waffle Pack
(400 per)The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
TDS-RFSLC-0006 | Rev 1– microwave single layer ceramic capacitors –Microwave SLCs

High Reliability Certification Program

Commercial Off The Shelf

High Reliability Certification Program
The COTS Program provides a cost efficient approach to qualifying
standard products for enhanced reliability applications. This
flexible program offers standard screening packages with options
to support specifics of customer-driven program requirements.

Applications:• Ruggedized Commercial(Medical, Industrial, Telecommunications)• Military(Ground, Naval, Airborne)• Space/Satellite

COTS Screening Options
HD: Highest Screening Level
The highest screening option adds life testing as an assurance in mission critical applications and is often
used as an alternative in space qualified applications.

HD

HC: Airborne Applications
Often used in airborne applications, this profile closely models the military specifications.

HC

HB: Additional Sample Testing
Built upon our standard HA Screening, this program provides additional sample testing to certify thetermination for attachment integrity and the ability to survive and perform in high humidity environments.

HB

HA: Standard Upscreen Package
ATC’s Standard Hi Rel certification screening profile is typically used as a lower cost means tocertify product reliability. HA screening is used throughout the industry in ground based military
applications as well as stringent commercial applications.

P/N Prefix
HA

X

HB

Evaluation Operation

SampleSize

HA
DPA Sample TableHC

HD

Lot Size

SampleX

X

Ultrasonic Screening†100%

1 - 500

14

X

X

Thermal Shock (5 Cycles for HC and 20 Cycles for HD)

100%

501 - 10,000

32

X

X

Standard Hi-Rel Certification Package (HA)

100%

10,001 - 35,000

50

X

X

Destructive Physical Analysis

see table*

35,001 and up

80

X

X

X

85/85 (Low Voltage Moisture Humidity)

13 units*

X

X

X

Solderability (Solderable or Solder Coated Only)

5 units*

X

X

X

Wire Bond Test (Gold Terminated Chips Only)

13 units*

X

Life Test (2000)

25 units*

X* Additional sample units required that have passed the 100% testing along with the deliverable (flight) quantity.
† Ultrasonic Screening does not apply to SLC products.
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.

– microwave single layer ceramic capacitors –15

Microwave SLCs

Introduction to Microwave Capacitors
Typical Microwave Circuit Applications

The top side of the capacitor should be completely metallized sothat the bond wire from the FET to the edge of the capacitor isminimized.

Microwave MLC, SLC, or Thin-Film capacitor applications in MIC
circuits can be grouped into the following categories:

The height of the capacitor must be less than or equal to the heightof the FET, usually about 0.005 inches. If the capacitor is higher thanthe FET, the capacitor will interfere with the bonding tool when wirebonding to the FET.

• DC Block (in series with an MIC transmission line)• RF Bypass (in shunt with transmission lines)• Source Bypass (in shunt with active device)

Impedance Matching• Impedance Matching

The impedance matching application is to use the chip capacitor toprovide the required reactance at a specific point in the circuit.

This chapter discusses these applications and the performanceparameters of microwave capacitors affecting these applications.

This is usually the most critical application in terms of the capacitor
maintaining a tight tolerance over temperature and from unit-to-unit.

DC BlockIn the DC block application, the chip capacitor is placed in series
with the transmission line to prevent the DC voltage from one circuitfrom affecting another circuit.

The other applications only require that the capacitance for the DC
block and RF bypass maintains a low reactance and the tolerance
can be as much as ±50%. Whereas the impedance matching function
often requires ±1% tolerance.

The capacitance is chosen so that the reactance is only a fraction of
an ohm at the lowest microwave frequency of interest.

In general, microwave capacitors should have the following
properties:

The largest value capacitor is used as long as the self-resonant
frequency is still much higher than the highest frequency of interest.

• Low-loss

RF Bypass• Operate very much below the self-resonant frequency

The RF bypass application is used to effectively short out the RF to
ground. The capacitor value is also picked to be as large as possible
without approaching the self-resonance of the capacitor.

• The power handling capability should be commensurate with the
expected power performance of the circuit

Source Bypass• Low variation of capacitance over temperature• Capable of wire bonding and gap welding

The source bypass application is the same as the RF bypass except
the capacitor is used in conjunction with an active device.

• Low unit-to-unit variations in capacitance• Low dimensional variations from unit-to-unit

In this application the chip capacitor is butted up to the sourceof the microwave FET device mounted on the MIC circuit. This isdone to minimize the length of the wire bond from the source of
the FET to the capacitor. The shorter the wire bond, the lower thecorresponding inductance.

Typical SLC applications in MIC circuits are shown in:

RFIN
R

D C

C D

SIMPLIFIED RF SPECTRUM
500 MHz
DISTRIBUTED NET

LUMPED NET

C

ELF. VLF. LF

60 cm
COAXIALSYSTEMS

3 GHz

WAVEGUIDESYSTEMS

10 cm

C D

D

RFOUT

C

D
MF. HF

VHF

UHF

SHF. EHF

300 KHz

3 MHz

30 MHz300 MHz

3 GHz

30 GHz

1 km

100 m

10 m

1m

10 cm

1 cm

AM
BROADCASTFMBROADCAST

BIAS

Figure 2. Typical MIC Microwave Attenuator Hybrid with SLC’s.
“C” indicates SLC locations.

SATELLITE(COMMERCIAL)

Figure 1

16

RR

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –Microwave SLCs

Introduction to Microwave Capacitors
Microwave Parameters
Scattering Parameters

It can be shown that return loss can be related to the reflection
coefficient and VSWR:

Generally, transmission and reflections coefficient measurementscompletely characterize any black box or network. Transmission
and reflections parameters — attenuation (gain), phase shift, andcomplex impedance — can be described in terms of a set of linear
parameters called “scattering” or “s” parameters. Knowing thesecharacteristic parameters, one can predict the response of cascaded
or parallel networks accurately. Unlike y or h parameters which
require short circuit and open circuit terminations, “s” parameters
are determined with the input and output ports terminated in thecharacteristic impedance of the transmission line which is a much
more practical condition to obtain at RF and microwave frequencies.

Eq. 2. RL (dB) = 10 * log (Pinc/Pref)= 20 * log (Einc/Eref) = 20 * log (1/Rho)
Eq. 3. Rho = (VSWR - 1)/(VSWR + 1)
Eq. 4. VSWR = (1 + Rho)/(1 - Rho)
where Rho = reflection coefficient
RL = return loss
Pinc = power incident
Pref = power reflected
Einc = voltage incident
Eref = voltage reflected
VSWR = voltage standing wave ratio

To summarize, “s” parameters are more useful at microwave
frequencies because:

By the above equation, when the reflection coefficient is 1, thereturn loss is zero. In this case, no signal is lost and all the signal
incident upon the discontinuity was returned to the source. As thereflection coefficient approaches zero, the return loss approaches
infinity. That is, the more perfect the load, the less the reflection
from that load.

1. Equipment to measure total voltage and total currents at theports of the networks is not readily available.
2. Short and open circuits are difficult to achieve over a broad bandof frequencies because of lead inductance and capacitance.
Furthermore, these measurements typically require tuning
stubs separately adjusted at each frequency to reflect shortand open circuits to the device terminals, and this makes theprocess inconvenient and tedious.

The return loss can be improved by an attenuator.
Assume that we connect a perfectly matched 3 dB attenuator into a
short circuit as shown in Figure 3.

3. Active devices such as transistors and negative resistance
diodes are very often not short- or open-circuit stable.
There are four scattering parameters for a two-port network: S11,
S12, S21, and S22.

PINC

S11 is the reflection coefficient at the input port with the output
port terminated in a 50 ohm load.

SHORT CIRCUITPREF

S12 is the reverse transmission coefficient in a 50 ohm system.

3 dB ATTEN

S21 is the forward transmission coefficient in a 50 ohm system.
S22 is the reflection coefficient at the output port with the input
port terminated into a 50 ohm load.
The reflection coefficients can be directly related to the impedanceof the device by the equation:
Eq.1. ZIN/ZO = (1 + S11)/(1 - S11)
where ZIN= input impedance
ZO = characteristic impedance ofthe transmission line
This equation also defines the Smith Chart.

Return Loss
Return loss is the ratio of the incident power to the reflected power
at a point on the transmission line and is expressed in decibels.
The reflected power from a discontinuity is expressed as a certain
number of decibels below the incident power upon the discontinuity.

Figure 3

P
REF
____
= -6 dBPINC

The indicated 100 mw is decreased to 50 mw at the output of the
3 dB attenuator. This 50 mw is reflected from the short circuit backthrough the attenuator in the reverse direction and one-half of thisreflected power is lost in the 3 dB attenuator. The reflected powerat the input is 25 mw. Notice the return loss is equal to twice theattenuation because it is the “round trip” loss. This example showsthat VSWR is decreased when attenuation exists on a transmission
line and also that a high VSWR can be decreased by placing anattenuator in the line.

Mismatch Loss
Mismatch loss is a measure of power loss caused by reflection. It
is the ratio of incident power to the difference between incident andreflected power and is expressed in dBs as follows:
Eq. 5.

Mismatch loss (dB) = 10 * log[Pinc/(Pinc - Pref)]= 10 * log[1/(1-Rho = 2)]

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –17

Microwave SLCs

Introduction to Microwave Capacitors
Microwave Parameters
(1)
SWEEP
GENERATOR

N(2) GPC-7
SWR
AUTOTESTING

(3)

SMA

GPC-7
TO SMA

(4)
DUT

SMA

(5) GPC-7
GPC-7TO SMA(6) GPC-7

(7)

ATTEN

DET

(8)
SCALARANALYZER

REFLECTION(1) Wiltron 6647A 10MHz - 18GHz sweepers(2) Wiltron 560-97-A50(3) OSM 2082-2700-00(4) Device under test(5) OSM 2082-2700-00(6) OSM 7082-6193-10(7) Wiltron 560-7A50

Test
set-up for:______________(1) Insertion loss
(2) VSWR

Figure 4

The mismatch loss for various values of VSWR is tabulated asfollows:
VSWR
1.00
1.20
1.40
1.50
1.70
2.00
2.50
3.00

Table I

In using the scalar network analyzer it is a temptation to normalize
the amplitude response regardless what the actual response isduring calibration. It is advisable to eliminate the amplitude ripple
first before normalizing the scalar analyzer. One way is to makeuse of the fact that VSWRs can be improved by the use of matchedattenuators. Often, 10 dB attenuators are placed before and after the
DUT to provide a minimum of 20 dB return loss which corresponds
to source and load VSWRs of less than 1.20:1. This will reduce theuncertainties due to mismatch losses to less than 0.02 dB.

Mismatch Loss
0.00 dB
0.04 dB
0.12 dB
0.18 dB
0.30 dB
0.51 dB
0.88 dB
1.25 dB

Return Loss Measurement
The return loss is measured by the following method: The test port
is terminated by a short circuit so that all the incident power isreflected. A detector on the bridge measures this power and thispower is used as the reference for the incident power. The test
port is then terminated by the DUT and the reflected power now
measured. The difference between the power levels is the returnloss.

Insertion Loss Measurement
Insertion loss is measured by the substitution method. The insertion
loss of the measurement system is used as a reference. Then the
DUT (Device Under Test) is inserted into the setup and the new
insertion loss is measured. The difference between the two losses
is the insertion loss of the DUT.
The insertion loss is measured using the test setup as shown in
Figure 5.

SWR BRIDGEIn order to accurately measure the insertion loss, source VSWR andload VSWR must be extremely Iow. It is assumed during calibration(loss of the measurement system with the DUT removed from thetest setup) that the VSWR of the generator and the load does notcontribute any mismatch losses. As discussed in the section on
mismatch loss, any VSWR above 1.2:1 may cause a minimum errorof 0.04 dB. In addition, the two VSWRs may be additive or subtractive
depending on the phasing of the reflections. For example, source
and load VSWRs of 1.2:1 can add to create an error of 0.08 dB. The
mismatches usually exhibit themselves as amplitude ripple as afunction of frequency. It is important when measuring low insertion
losses that precautions are taken to ensure low source and load
VSWRs and to keep the mismatch losses due to the two VSWRs toa small fraction of the expected insertion loss of the DUT.

18

TRANSMISSION

INCIDENT
POWER

DETECTOR
Figure 5. Return Loss Measurement:
Establishing a Reference

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –Microwave SLCs

Introduction to Microwave Capacitors
Microwave Parameters
SWR BRIDGE

Note that the insertion loss and return loss can be measured
simultaneously by using the dual trace feature of the Wiltron Scalar
Analyzer. Furthermore, the two measurements can be done by using
a controller such as the HP85 computer for semi-automatic testing.

INCIDENT

INPUT

DUT

REFLECTED

50 OHMTERMINATIONThe calibration for 0 dB return loss can be improved by averaging
the short circuit and open circuit reflected powers. Since the phasedifference is 180 degrees, the average closely approximates theactual full reflection.

Decibels

DETECTOR
DUT IN PLACE

The decibel, abbreviated “dB,” is one-tenth of the internationaltransmission unit known as the “bel.” The origin of the bel is thelogarithm to the base 10 of the power ratio. It is the power to which
the number 10 must be raised in order to equal the given number.
The number 10 is raised to the second power, or squared, in orderto get 100. Therefore, the log of 100 is 2.

Figure 6• All incident power is reflected at the short circuit.
• The detector measures the reflected power.
• An SWR bridge usually has a directivity of 35 to 40 dB. In
other words, only a minute fraction of the incident power
reaches the detector (the dotted line path) that is notreflected off the short circuit.
• The DUT is substituted for the short circuit and the opposite
port is terminated by a matched termination (50 ohms).
• The reflected power depends on the DUT and is sensed by
the detector.
• The return loss is the difference between this reflected
power and that measured with a reference short circuit.
• A significant improvement in calibrating a 0 dB return loss
reference by averaging the short circuit and open circuitreflected powers.
• The dotted line in the figure below shows the reflections due
to an open circuit.
• The solid line in the figure below shows the reflections due
to a short circuit.
• Since the phase difference between short circuit and open
circuit is 180 degrees.
• By taking the average between these two voltages, theactual full reflection is very closely approximated.

The decibel is expressed mathematically by the equation:
Eq. 6

The use of log tables can be avoided in practical applications whereexact values of the power are not required. One only needs to knowthat a factor of 2 is equal to 3 dB and a factor of 10 is equal to
10 dB and the rest of the conversions are derived from these
two relationships. The use of dBs reduces multiplication into an
addition. For example:
3dB =			26dB = 2 x 2=
49dB = 2 x 2 x 2 =810dB =			
10
20dB =			 100The technique is based on the fact that 3, 6, and/or 9 dB can be
added or subtracted (in some combination) to any decibel value.
Adding or subtracting 10 to a decibel value simply multiplies ordivides the number by ten. Examples:
1. 17dB = 20dB - 3dB
20dB is 10dB + 10dB or is equal to 100.
3dB is equal to 2
Therefore, 20 dB - 3dB = 100/2 = 50

AVERAGING THE SHORT CIRCUIT AND OPEN CIRCUITREFERENCES FOR HIGHER ACCURACY

SHORT

OPEN

E0

A
B
C

C1

2. 36dB = 30dB + 6dB1000 x 4 = 4000
Decibel:B1

The decibel is not a unit of power but merely is a logarithmic
expression of a ratio of two numbers. The unit of power may be
expressed in terms of dBm, where “m” is the unit, meaning above
or below one milliwatt. Since one mw is neither above nor below 1
mw, 1 mw= 0 dBm.

A1

f1

f2

dB = 10 * log (P2/P1)
P2 = larger power
P1 = lower power

ACTUALFULL
REFLECTION

Nepers:An alternate unit called the neper is defined in terms of the logarithm
to the base “e.” e = 2.718.

PREFERRED REFLECTION CALIBRATION

Figure 7

1 neper = 8.686dB
1dB = 0.1151 neper

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –19

Microwave SLCs

Introduction to Microwave Capacitors
Electrical Model
Capacitance

Figures 9 and 10 also show the point of series resonance (LS inseries with C), and parallel resonance (LS in parallel with CP)

Microwave chip capacitors, although closely approximating an
ideal capacitor, nonetheless also contain parasitic elements thatare important at microwave frequencies. The equivalent circuit isshown below:
C

RS

QP2

RS

INDUCTIVE

LS

LS
RS
P

Z( )
S

RS

CP

CAPACITIVE

Figure 8. Equivalent Circuit of a
Microwave Capacitor
where,

1
___
CP

QP2

RS

C = desired capacitance

Figure 9. SLC Impedance Magnitude vs. Frequency

LS = parasitic series inductance

SERIES RESONANCE

RS = series resistance

j50
j100

j25

CP = parasitic parallel capacitance,
Rp, the parallel resistance is not shown as it is of concern only at dc
and low frequencies.

j150
j10

The primary capacitance, C, is typically determined by measurement
at 1 MHz where the effects of Rs, Ls, and Cp become negligible
compared to the reactance of C. The value of C determined at thislow frequency is also valid at microwave frequencies when the
dielectric constant has a very low variation versus frequency, as is
typical in the modern dielectrics employed in microwave capacitors.

0

j250

10

25

50

PARALLELRESONANCE

100 150 250 500

-j10

-j250
-j150
-j100

-j25
-j50

The equivalent impedance of the capacitor at any frequency is:Eq. 7.

COORDINATES IN OHMSFREQUENCY IN GHz

Figure 10. SLC Impedance on Smith Chart
Because there is always some parasitic inductance associated withcapacitors, there will be a frequency at which the inductive reactancewill equal that of the capacitor. This is known as the series resonant
frequency (SRF). At the SRF, the capacitor will appear as a small
resistor (RS). The transmission loss through a series mounted
capacitor at its series resonant frequency will be low.

where s = j2πf, f = frequency

Series and Parallel ResonanceAt frequencies above the SRF, the capacitor begins to act like an
inductor.

Ideally, the impedance magnitude of a series mounted capacitor willvary monotonically from infinite at dc to zero at infinite frequency.
However, the parasitics associated with any capacitor result in anonideal response.

When used as a DC block, the capacitor will begin to exhibit
gradually higher insertion loss above the SRF. In other words, thecapacitor will cause a high frequency rolloff of its transmission
amplitude response.

Figure 9 shows the magnitude, :Z (F):, as a function of frequency.
Figure 10 shows Z(f) on the Smith Chart, which includes magnitude
and phase.

When used as an RF bypass, as for the source of an FET, theinductance will cause the FET to become unstable which can cause
oscillations or undesirable effects on the gain response of the FET
amplifier.

Eq. 8. In general, an impedance is represented by Z=R + j X.
The Smith Chart maps the entire impedance half plane for R > 0
into the interior of a unit circle. The Smith Chart is a mapping of thereflection coefficient, S11, of an impedance. S11 = (Z- ZO) / (Z + ZO).
ZO is a reference impedance, typically 50 ohms, and is in the centerof the chart. The central horizontal axis is for X = O, with R < 50 tothe left of center, and R > 50 to the right of center.

20

1
___
C

Beyond the SRF, there is a frequency called the parallel resonant
frequency (PRF). This occurs when the reactance of the series
inductor equals that of the parallel capacitor.

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –Microwave SLCs

Introduction to Microwave Capacitors
Electrical Model
Equivalent Series ResistanceAt this parallel resonant frequency, the capacitor will appear as alarge resister whose value is RPRF defined as:

The equivalent series resistance is the RS in the electrical model.
At the SRF, the ESR can be readily determined on the Smith Chart
display of the capacitor’s impedance. However, the ESR is notnecessarily constant with frequency and its value is typicallydetermined by an insertion loss measurement of the capacitor at
the desired frequency.

Eq. 9. RPRF = Rs x QP X QP; where,

The parasitic parallel capacitance is usually very small which results
in a parallel resonant frequency that is much higher than the series
resonance.

The insertion loss is a combination of reflective and absorptive
components. The absorptive component is the part associatedwith the value of the ESR (i.e., the loss in RS). Because of the low
values of ESR in microwave capacitors (on the order of 0.01 ohm),
the insertion loss measurement is very difficult to make, but canbe made with a test fixture similar to that shown in Figure 11, butwith the input and output 50 ohm impedances transformed down
to some more convenient impedance level, Rref, to obtain a moreaccurate measurement.

For capacitor usage in RF impedance matching and tuning
applications, the maximum practical frequency for use is up to 0.5
times the SRF.
For DC filtering and RF shorting applications, best performance isobtained near the SRF.
At frequencies above the SRF, but below the PRF, the SLC can beused as a low loss inductor with a built-in DC block for bypassing
and decoupling.

When used as a DC block in the transmission line test fixture, theforward transmission coefficient, S21, and the input reflection
coefficient, S11, can be measured to determine:

The series resonant frequency (SRF) of an SLC can be measured by
mounting the capacitor in series on a 50 ohm transmission line asshown in Figure 11.

Eq. 10. Dissipative Loss.
DL=(1-:S11:^2)/(:S21:^2)

CHIP CAPACITOR

Eq. 11. Reflection Loss.
RL=(1-:S11:^2) where S11 and S21 are expressed ascomplex phasors.
From the dissipative loss, DL, the ESR can be determined as:
Eq. 12. ESR = Rref * [1 - SQRT(DL)]/[1 + SQRT(DL)]

50 ohmLINE

The ESR typically increases with operating temperature and selfheating under high power. This increase can be seen directly in thelab by measuring the insertion loss of the capacitor as a function oftemperature.

50 ohmLINE

A low ESR is especially necessary in SLC’s when used in series
with transistors in low noise amplifiers, high gain amplifiers, orhigh power amplifiers. For example, an ESR of 1 ohm in series
with a base input impedance of 1 ohm would result in a serious
compromise in ampIifier gain and noise figure by up to 3 dB.

Figure 11
At its series resonant frequency (SRF), the SLC will appear as asmall resistance. This measurement can be performed with a vector
network analyzer such as the Hewlett Packard 8510. The SRF is at
the frequency for which the phase of the input reflection coefficient,S11, is crossing the real axis on the Smith Chart at 180 degrees.

Power Rating
The RF power rating of chip capacitors is dependent on:• Thermal Breakdown• Voltage Breakdown

The resonant frequency will be lowered by the inductance associatedwith the bonding attachment to the capacitor (i.e., bonding wires,ribbons, leads, etc.). The actual resonant frequency of the capacitor
by itself can be determined by taking out the effects of the bonding
attachment inductance. Using the low frequency measurementsof the primary capacitance alone, the inductance of the capacitor
can be derived from the resonant frequency. With KYOCERA AVX
SLC’s, the inductance is low enough so that the practical operating
frequencies achieved can be beyond 20 GHz.

Thermal Breakdown
Thermal breakdown is self-heating caused by RF power dissipatedin the capacitor.
If the resultant heat generated is greater than what can be conductedaway through the leads or other means of heat sinking, the capacitor
temperature will rise.

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –21

Microwave SLCs

Introduction to Microwave Capacitors
Electrical Model
Dielectric Constant Measurement at
Microwave Frequencies

As the capacitor temperature increases, the dissipation factor and
ESR of the capacitor also increase which creates a thermal runaway
situation.

The measurement of dielectric constants at low frequencies iseasily done by measuring the capacitance of a substrate of known
dimensions and calculating the dielectric constant.

The small signal insertion loss is used to determine the percentage
of power which is dissipated in the capacitor.
For instance, if the insertion loss is:

The resonance method is used in measuring dielectric constantsat microwave frequencies of metallized ceramic substrates. Thisis based on the model of the high dielectric constant substrate
as a parallel plate dielectrically loaded waveguide resonator. By
observing the resonant frequencies and knowing the dimensionsof the substrate, the dielectric constant is calculated by fitting
the resonances into a table of expected fundamental and higher
order modes. This method can be measured by connecting thecorners of the substrates to the center conductors of either an
APC-7 or Type N connector. The test setup is the same as for
insertion loss measurements. This method as described in theliterature for an alumina substrate with a dielectric constant ofapproximately 10 and a substrate height of 0.025 inches can bemeasured to an accuracy of 2%. The Napoli-Hughes Method uses
an open circuit assumption for the unmetallized edges which canbe radiative. This inaccuracy is reduced if thinner substrates or ifhigher dielectric constant substrates are used which will tend to
reduce radiation. Higher accuracy can be achieved by metallizing
all six sides of the substrate except for the corners where the RF
is coupled to the substrate. This method as reported by Howellprovided more consistent results.

0.01 dB then .2% of the incident power is lost as heat
0.10 dB then 2% of the incident power is lost as heat
1.00 dB then 20% of the incident power is lost as heat
The capacitor will heat up according to the amount of power
dissipated in the capacitor and the heat sinking provided.
Even very low ESR, 0.01 ohm at 1 GHz, can be significant when
passing power through a series mounted capacitor into a typically
low impedance bipolar transistor base input with an input impedanceof only 1 ohm. If 1% of 10 watts is dissipated in the capacitor, this
100 milliwatt of power causes a very large increase in the capacitor
temperature dependent on its heat sinking in the MIC circuit.

Voltage Breakdown
The voltage breakdown also limits the maximum power handlingcapability of the capacitor.
The voltage breakdown properties of the capacitors is dependent
on the following:• dielectric material• voids in the material• form factor• separation of the electrodes
Most microwave capacitors have a DC voltage rating of 50 VDC. Thisis much greater than typical DC voltages of 3 to 15 volts present on
an MIC circuit.

m=2

2L
___
f
W 0

L
___
f
W 0

2f0

m=1

f0

DETECTORSCALARANALYZER

m

=

0

FROM
AUTO
SWEEP
GENERATOR TESTER

n=1

2

3

4

Figure 12
Dispersion Curve of a Rectangular Resonator

22

Figure 13
Test Configuration for Resonance Measurements

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –Microwave SLCs

Introduction to Microwave Capacitors
Transmission Lines
Propagation Constant andCharacteristic ImpedanceStanding Waves

The incident waves of voltage and current decrease in magnitudeand vary in phase as one goes toward the receiving end of thetransmission line which has losses. The propagation constant is ameasure of the phase shift and attenuation along the line.

An incident wave will not be reflected if the transmission line isterminated in either matched load or if the transmission line isinfinitely long. Otherwise, reflected waves will be present. In otherwords, any impedance will cause reflections.

• attenuation per unit length of line is called the attenuation
constant. (dB or nepers per unit length)

Let us consider the case of a lossless transmission line terminatedin a short line. In this case all of the incident wave will be reflected.
See Figure 15.

Standing waves on the lossless transmission line:• phase constant, phase shift per unit length. (radians per unit
length)The dotted sine wave to the right of the short circuit in the diagram
indicates the position and distance the wave would have traveledin the absence of the short circuit. With the short circuit placed atX, the wave travels the same distance back toward the generator.
In order to satisfy the boundary conditions, the voltage at the shortcircuit must be zero at all times. This is accomplished by a reflectedwave which is equal in magnitude and reversed in polarity (shownby the superimposed reflected wave and the resultant total voltage
on the line). Note that the total voltage is twice the amplitude of theincident voltage at a quarter wavelength back toward the generator
and the total voltage is zero at one-half wave-length from the short.

• angular frequency, 2 * pi * f(R+jwL) - complex series impedance per unit length of line. (G+jwC)- complex shunt admittance per unit length of line.
Eq. 13. Z0  for lossless case:

WAVE

2E1

CIRCUIT

X

D
E1
1

3

10

2

Ei

2

3

RESULTANT(a)DISTRIBUTED PARAMETER MODEL
OF A SECTION OF TRANSMISSION LINES:

1

SHORT

E1

11

r x

6

3

2

5

l x
g x

2

4
4

3

c x

1

Er
(b)

RESULTANT

3
12

2

SHORT

x

4

2Ei

where G = Conductance per unit length
R = Resistance per unit length
C = Capacitance per unit length
L = Inductance per unit length
X = Incremental length

2

4
3

(c)
7

1

7

6
5
4
3
2

2
3
4
5
6

6
5
4
3
2

7

1
(d)

SHORT
1

Figure 15

2
3
4
5
6

1

PURE TRAVELING WAVE
V
+

I

7
(e)

AMPLITUDE

Figure 14

X-

This figure shows generation of standing waves on a shorted
transmission line. Dotted lines to the right of the short circuit
represent the distance the wave would have traveled in absence ofthe short. Dotted vectors represent the reflected wave. The heavy
solid line represents the vector sum of the incident and refected
waves. (d) and (e) represent instantaneous voltages and currents
at different intervals of time.

DISTANCE ALONG LINE

V = Instantaneous voltage
I = Instantaneous current
Pure traveling waves: V & I in the lossless case are in phase.
V & I also reverse polarity every half wavelength.

Figure 16

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –23

Microwave SLCs

Introduction to Microwave Capacitors
Transmission Lines
Open Circuit:

FIELD ORIENTATION OF A COAXIAL LINEE

I

At a distance of one-quarter wavelength from the short, the voltage
is found to be twice the amplitude of the incident voltage, whichis equivalent to an open circuit. Therefore, this same distribution
would be obtained if an open circuit were placed a quarter
wavelength from the short. In the case the first node is located aquarter wavelength from the open and the first antinode is right as
the open. The node-to-node spacing remains half wavelength as is
the antinode-to-antinode spacing.

H

V• ±DIRECTION OF PROPAGATION

Figure 17

Voltage Standing Wave Ratio:
TWO
WIRE

RECTANGULARWAVEGUIDEMICROSTRIPRIDGEDWAVEGUIDEThe voltage standing wave ratio is defined as the ratio of the
maximum voltage to the minimum voltage on a transmission line.
This ratio is most frequently referred to as VSWR (Viswar).

COAXIALEq. 14.

CIRCULARWAVEGUIDECROSS SECTIONAL CONFIGURATIONS OFVARIOUS TYPES OF GUIDING STRUCTURES

where Rho = reflective coefficient
If the transmission line is terminated in a short or open circuit,the reflected voltage, Er, is equal to the incident voltage, Ei. From
the above equation the reflection coefficient is 1.0, and the VSWR
is infinite. If a matched termination is connected to the line, thereflected wave is zero, the reflection coefficient is zero, and the
VSWR is zero.

Figure 18
The total voltage pattern is called a standing wave. Standing waves
exist as the result of two waves of the same frequency traveling in
opposite directions on a transmission line.
The total voltage at any instant has a sine wave distribution along
the line with zero voltage at the short and zero points at half wave
intervals from the short circuit. The points of zero voltages arecalled voltage nodes and the points of maximum voltage halfway
between these nodes are called antinodes.

24

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –Microwave SLCs

Introduction to Microwave Capacitors
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids
Microwave Integrated Circuit Hybrids
A Microwave Integrated Circuit Hybrid (MIC) is a microwave circuitthat uses integrated circuit production techniques involving suchfactors as thin or thick films, substrates, dielectrics, conductors,
resistors, and microstrip lines, to build passive assemblies ona dielectric. Active elements such as microwave diodes andtransistors are usually added after photo resist, masking, etching,and deposition processes have been completed. MICs usuallyare enclosed as shielded microstrip to prevent electromagnetic
interference with other components or systems. This section will
discuss some of the important characteristics of MICs, such as:• Dielectric Constant: Increase of the dielectric constant of thesubstrate will decrease the ZO of the microstrip line.
Table II shows a brief listing of substrate properties.

Table II
Material

MIC Substrates:

For the current discussion we are most interested in the higher
microwave frequencies. The MIC circuit design requires a uniform
and predictable substrate characteristic. Several types of substrates
in common usage are: alumina, sapphire, quartz, and beryllium
oxide. Key requirements for a MIC substrate are that it have:• Low dielectric loss
• Uniform dielectric constant• Smooth finish• Low expansion coefficient

Quartz

Beryllium
Oxide

3.8

6.6

0.00010.00010.01

2.5

The dependence of ZO to the above parameters is as shown:
Eq. 15. ZO(f) = 377 * H/(W)/Sqrt (Er)where,

H = height of the substrate
W = width of the microstrip
conductor
Er = dielectric constant of thesubstrate

A graph of ZO versus W/H for several values of dielectric constants
is shown below:

Z0 - MICROSTRIP IMPEDANCE ( )

1000

STRIP
CONDUCTOR
Wh

Sapphire

Relative
9.8*
11.7
Dielectric
Constant, Er
Loss Tangent
0.00010.0001
at 10 GHz
ThermalConductivity
0.3
0.4
K, in W/CM/
Deg. C*Alumina Er depends on vendor and purity.

• MIC substrates• MIC metallization• MIC components
Microstrip employs circuitry that is large compared to the wavelengthof the frequency used with the circuit. For this reason, the etched
metal patterns often are distributed circuits with transmission
lines etched directly onto the MIC substrate. Figure 19 shows thepertinent dimensional parameters for a microstrip transmission
line.

Alumina

DIELECTRIC

500
400
300
200

2.3
2.55

100

4.8
6.8

50
40

10

30
20
10
5
4
3
2

GROUND PLANE

1

Figure 19. MIC Microstrip Outline.1.2.3 .4 .5

12

3 4 5 7.5 102030 40 50100

MICROSTRIP W/H

The characteristic impedance of the microstrip line is dependentprimarily on the following:

Figure 20
The most popular substrate material is alumina which has adielectric constant of between 9.6 and 10.0 depending on thevendor and the purity. Other substrates are used where the specified
unique properties of the material (beryllia for high power, ferrites formagnetic properties) are demanded by design.

• Width of the conductor: Increase in the width “W” of the
conductor will decrease the ZO of the microstrip line.
• Height of the substrate: Increase in the height “H” of thesubstrate will increase the ZO of the microstrip line.

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –25

Microwave SLCs

Introduction to Microwave Capacitors
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids
MIC Metallization:

Capacitors:

MIC metallization is a thin film of two or more layers of metals. A
base metallization layer is deposited onto the substrate, anotherlayer may be optionally deposited on top of this, and then a final
gold layer is deposited onto the surface. The base metallization ischosen for its adhesion to the substrate and for compatibility with
the next layer.

A lumped capacitor can be realized by the parallel gap capacitanceof an area of metallization on the top of the substrate to the groundplane. Values of capacitance that can be obtained by this method
are usually less than a few picofarads. At microwave frequencies
if the capacitor size in any one dimension begins to approach aquarter-wavelength, a resonance will occur.

The base metallization is usually lossy at microwave frequencies.
The losses due to this metallization can be kept to a minimum if its
thickness does not exceed one “skin depth” of the metal.

Large values of capacitance can be achieved with a dielectric
constant between the capacitor plates while maintaining the small
size required for MIC circuits.

Skin effect defines a phenomenon at microwave frequencies where
the current travelling along a conductor does not penetrate theconductor but remains on the surface of the conductor. The “skindepth” indicates how far the microwave current will penetrate into
the metal. The “skin depth” is smaller as the frequency increases.

Chip capacitors can be fabricated on substrate with a dielectric
constant up to 5000. This higher dielectric constant allows a muchsmaller size capacitor for a given capacitance value which is a very
desirable feature both from the real estate aspect and the selfresonance aspect.

By keeping the lossy metallization as thin as possible, more of the
microwave current will propagate in the top metallization gold layer
and loss is minimized.

Resistors:
MIC resistors are often realized by using a resistive base layer on
the MIC substrate metallization, and by etching the proper pattern
to expose the resistive layer in the MIC circuitry.

Typical metallization schemes used in the industry are:
• Chromium-Gold:• Nichrome-Gold:• Chromium-Copper-Gold:• Titanium-Tungsten-Gold:• Others

Cr-Au
NiCr-Au
Cr-Cu-Au
TiW-AuThe exact value of the resistor is determined by:• resistivity of the resistive base layer, and• length and width of the resistor.
Thin film resistive base layers are usually the following:• tantalum nitrite, or• nickel-chrome (nichrome).
When chip resistors are used, they are mounted and connected in
the same way as the chip capacitors.

MIC Components:
Microstrip has advantages over other microwave circuit topologies
in that active semiconductors and passive components can easily
be incorporated to make active hybrid circuits. It is possible to mix
high and low frequency circuitry to attain a “system-on-a substrate.”

Inductors:

Passive Components:

Inductors are often realized by using narrow etched microstrip lines
which provides inductance on the order of 1 to 5 nanohenrys.

On MIC circuits, the passive components are either distributed or
lumped elements. The distributed components are usually realized
by etched patterns on the substrate metallization. The lumped
components are capacitors, resistors, and inductors; and wheneverpossible components are derived by etching them directly on the
MlC metallization thin film. Chip components are used when they
offer advantages such as:Higher values up to 50 nanohenrys are obtained by etching a roundor square spiral onto the MIC metallization.
Even higher values can be obtained by using wound wire inductors
or chip inductors which are wire coils encased in a ceramic.
Both types of discrete inductors are attached to the circuit by thesame means as the capacitors.

• Component values are beyond that realizable by thin film
techniques on the MIC substrates,• Smaller size is required,• High power capability is required.
Capacitors, resistors, and inductors are discussed in the following:

26

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –Microwave SLCs

Introduction to Microwave Capacitors
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids
Active components:

For instance, the eutectic temperature for the following alloys are:

The active devices in the MIC circuit can be made of entirely
different materials than the substrates and are usually attachedto the substrates by eutectic soldering or conductive epoxy.

Table III

Typical active devices on MIC circuits are the following:• GaAs FETs
• Bipolar Transistors• Schottky Barrier Diodes• PIN Diodes• Various other Semiconductors
The active devices can be either in:Alloy

Eutectic
Composition

Eutectic
TemperatureGold Germanium
Gold Tin

88% Au 12% Ge
80% Au 20% Sn

356°C
280°C

For best results, the eutectic attach is performed under an inert
gas atmosphere, typically nitrogen, to reduce oxidation at hightemperatures. The eutectic must be selected so that the die
attach operations will not interfere with prior soldering operations
and itself will not be disturbed by subsequent process steps. The
metallization should be able to undergo 400°C without any blisteringor other adhesion degradation.

• a plastic or ceramic package with metal leads, or• chip form.
The packaged devices are commonly used at a lower frequency
range than the chip devices since they exhibit more parasitic circuit
elements that limit their performance at higher frequency.
The advantages of packaged devices are protection of the devices
during transport and mounting, ease of characterization, and easeof mounting onto the MIC circuit.

2. Epoxy Die Attach
The epoxy die attach method uses silver or gold conductive particles
in an epoxy. The epoxy for chip attach on MIC circuits is a one-parttype which cures at temperatures of from 125°C to 200°C. The
curing time is a function of temperature. A cure time of 30 minutes
at 150°C is a good compromise for high reliability and a reasonable
cure time.

Chip Component Attach:
The methods of attachment of the chip components to the substrate
are usually by:• eutectic solder die attach, and• epoxy die attach.

Chip Components Interconnection:

1. Eutectic Die Attach

The chip components are interconnected to the MIC circuit bymeans of:The eutectic die attach method can be used with several alloys.
Eutectic defines the exact alloy combination at which the solidus toliquidus transition takes place at one particular temperature. Other
combinations have transition states with wider temperature ranges.

• wire bonding, and• miniature parallel gap welding.

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719– microwave single layer ceramic capacitors –27

FOLLOW US:
visit us at www.kyocera-avx.com

North America

Tel: +1 864-967-2150

Central America

Tel: +55 11-46881960

EuropeTel: +44 1276-697000

Asia

Tel: +65 6286-7555

Japan

Tel: +81 740-321250