DATA SHEET
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Half-Bridge IGBT Module,Qdual3
1200 V, 800 A
PIM11, 152.00 x 62.15 x 20.80
CASE 180HT

SNXH800H120L7QDSG

MARKING DIAGRAM

General Description

The SNXH800H120L7QDSG is a 1200 V 800 A rated half bridge
IGBT power module. The integrated Field Stop Trench 7 IGBTsand Gen. 7 diodes provide lower conduction losses and switchinglosses, enabling designers to achieve high efficiency and superiorreliability.
Features

SNXH800H120L7QDSGATYYWW

SNXH800H120L7QDSG = Device CodeAT= Assembly & Test Site CodeYYWW= Year and Work Week Code• 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT PowerPIN ASSIGNMENTS

Module• Field Stop Trench 7 IGBTs & Gen.7 Diodes• NTC Thermistor• Isolated Base Plate• Solderable Pins
• Low Inductive Layout• This is a Pb−Free Device
Typical Applications• Commercial Agriculture Vehicles (CAV)ORDERING INFORMATION

4Device

Package

Shipping

SNXH800H120L7QDSGPIM11(Pb−Free)

8 Units /Blister Tray

9T1

PIN DESCRIPTION

D1758610/11T2D2123Figure 1. Schematic© Semiconductor Components Industries, LLC, 2024March, 2024 − Rev. 11Description

PinName

1G2T2 Gate

2E2T2 Emitter

3DC−DC Negative Bus Connection

4DC+DC Positive Bus Connection

5TH2Thermistor Connection 26TH1Thermistor Connection 17G1

T1 Gate

8E1

T1 Emitter

9CS1

T1 Collector Sensing

10OUT

Center Point of Half Bridge

11OUT

Center Point of Half Bridge

Publication Order Number:
SNXH800H120L7QDSG/DSNXH800H120L7QDSG
Table 1. ABSOLUTE MAXIMUM RATINGS (Tvj = 25°C unless otherwise specified)Parameter

SymbolConditions

ValueUnit

IGBT // DiodeVCES

Collector−Emitter Voltage

Gate−emitter = 0 V

1200

VVGES

Gate−Emitter Voltage

Collector−emitter = 0 V±20VContinuous Collector Current

TC = 90°C±800

AIPULSEIC

Repetitive Pulsed Collector Current

TC = 25°C, tp = 1 ms

±1600

A

Tvjop

Operating Junction Temperature−40~175°C

TSCWT

Short Circuit Withstand Time, Non Repetitive

VGE ≤ 15 V, VDC+ ≤ 800 V

8ms

VISO

Isolation Voltage

RMS, f = 60 HZ, pins to base plate

3.4

kV

TSTG

Storage Temperature

MTMounting torque to main terminals (Note 1)

M6 screwMHMounting torque to heat sink (Note 1)

M5 screw

MODULE−40~1256.0°C
N·m

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Recommendable value: 3.0 ~ 6.0 N·m

Table 2. THERMAL RESISTANCE CHARACTERISTICS
SymbolRthJCQ
RthJCD
RthCHQ
RthCHDMin

TypMaxUnit

Junction to Case Thermal Resistance(Note 2)

Parameter
Per IGBTCondition−−0.0498°C/W

Per diode−−0.0889

Case to Heat−Sink Thermal Resistance(Note 2)Per IGBT, 1 W/(m·K) thermal grease−0.0282−

Per diode, 1 W/(m·K) thermal grease−0.0342−Condition

MinTypMax

Unit
kW

2. Data from characterization.

Table 3. THERMISTOR CHARACTERISTICS
SymbolR25Parameter
Normal Resistance

R100

TNTC = 25°C

−5−TNTC = 100°C−493.3−

W

DR/R

Deviation on R100

TNTC = 100°C

−5−5%

PD

Power Dissipation − Recommended limit

0.15 mA, no−self−heating effect−0.1−mW

Power Dissipation − Absolute Maximum

5 mA−−

34.2mW−

1.4−mW/°C

Power Dissipation ConstantB25/50

B−ValueB(25/50), tolerance ±2 %−3375−

K

B25/100

B−ValueB(25/100), tolerance ±2 %−3436−

K

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2

SNXH800H120L7QDSG
Table 4. ELECTRICAL CHARACTERISTICS (Tvj = 25°C unless otherwise specified)Parameter

SymbolTest Conditions

Min

TypMaxUnit

Tvj = 25°C

–

1.65

2.05

V

Tvj = 25°C

–

1.44

1.85

Tvj = 125°C

–

1.63–

Tvj = 175°C

–

1.75

–IGBT
VCE(SAT)(Pin 8−9)

Collector−Emitter Saturation Voltage

VGE = 15 V, IC = 800 A

VCE(SAT)(Chip)(Note 3)
VGE(TH)

Gate−Emitter Threshold Voltage

VCE = VGE, IC = 80 mA

4.5

5.5

6.5

VQg

Gate Charge

VCE = 600 V, VGE = ±15 V, IC = 800 A

–

5.6–

mCRgint

Internal Gate Resistor

−

1.5−

W

Cies

Input Capacitance

–

94.3–

nF

Coes

Output Capacitance

–

3.9–

Cres

Reverse Transfer Capacitance

–

0.58

–

ICES

Collector–Emitter Cut Off Current

VCE = 1200 V, VGE = 0 V––100mA

IGES

Gate−Emitter Leakage Current

VCE = 0 V, VGE = 20 V

tdon

Turn−on Delay Time

VCE = 600 V, VGE = ±15 V,
Rg = 0.5 W, IC = 800 A,
Inductive loadtrtdoff

tfEon

Eoff

VCE = 25 V, VGE = 0 V, f = 100 kHz,Tvj = 25°C

Rise TimeTurn−off Delay Time

Fall TimeTurn−on Energy Loss per Pulse

Turn−off Energy Loss per Pulse

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3––80nA

Tvj = 25°C

–0.37

–ms

Tvj = 125°C–0.41–

Tvj = 175°C–0.42–

Tvj = 25°C

–0.14–

Tvj = 125°C–0.15–

Tvj = 175°C

–0.15

–

Tvj = 25°C

–0.4

–

Tvj = 125°C

–0.42

–

Tvj = 175°C

–0.44

–

Tvj = 25°C

–0.1

–

Tvj = 125°C

–0.17

–

Tvj = 175°C

–0.21

–

Tvj = 25°C

–87.4

–

Tvj = 125°C

–112

–

Tvj = 175°C–132.6–

Tvj = 25°C

–

69.8

–

Tvj = 125°C

–90.1

–

Tvj = 175°C–102.0

–

ms

ms

ms

mJ

mJ

SNXH800H120L7QDSG
Table 4. ELECTRICAL CHARACTERISTICS (Tvj = 25°C unless otherwise specified) (continued)
SymbolParameter

Test Conditions

Diode Forward Voltage

VGE = 0 V, IF = 800 A

MinTypMax

Unit

Tvj = 25°C

−

1.86

2.25V

Tvj = 25°C

–

1.64

2.05

Tvj = 125°C

–1.62

–

Tvj = 175°C

–

1.57

–

Tvj = 25°C

–229

–

Tvj = 125°C

–346

–

Tvj = 175°C

–399

–

Tvj = 25°C

–

37.6

–

Tvj = 125°C

–

90.5

–

Tvj = 175°C

–

126.6

–

Tvj = 25°C

–

14.0

–

Tvj = 125°C

–36.4

–

Tvj = 175°C

–52.6

–

DIODE
VF
(Pin 8−9)
VF(Chip)(Note 3)
IRRM

Qrr

Erec

Peak Reverse Recovery CurrentVCE = 600 V, VGE = ±15 V,
Rg = 0.5 W, IC = 800 A
Inductive load

Reverse Recovery Charge

Reverse Recovery Energy Lossper Pulse

AmCmJ

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. This parameter is only guaranteed by design.

Table 5. MODULE AND MECHANICAL CHARACTERISTICS
SymbolParameterCondition

CTI

Comparative Tracking Index

DCR

Creepage Distance

DCL

Clearance Distance

MinTypMax

Unit>175−−

Terminal to terminal

−

13.0−

mm

Terminal to heatsink

−

15.0−

mm

Terminal to terminal

−

10.0−

mm

Terminal to heatsink

−

12.5−

mm

MLS

Module Stray Inductance−20−nHMW

Module Weight

−

330−

g

90%

0V

10%

VGE
VCE
tdoff

90%

0V
0 A IC

tdon

90%

trtf

10%

Figure 2. Switching Time Definitionwww.onsemi.com
410%

SNXH800H120L7QDSG

1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
00.0

Tvj = 25°C
Tvj = 125°C
Tvj = 175°C

IC, Collector−Emitter Current (A)IC, Collector−Emitter Current (A)TYPICAL CHARACTERISTICS

VGE = 15 V
0.5

1.0

1.5

2.0

2.5

3.0

1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
10000.0

VGE = 9 V
VGE = 11 V
VGE = 13 V
VGE = 15 V
VGE = 17 V
VGE = 19 V

Tvj = 175°C
0.5

1.0

VCE, Collector−Emitter Voltage (V)IC, Collector−Emitter Current (A)IF, Forward Current (A)567891011121600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
10000.0400

275

4.5

5.0

VGE = 0 V
0.5

1.0

1.5

2.0

2.5Eon, Tvj = 125°CEon, Tvj = 175°C
Eoff, Tvj = 125°C
Eoff, Tvj = 175°C

250
225350300
250200150200
VCE = 600 V
VGE = ±15 V
IC = 800 A

175150125100100

VCE = 600 V
VGE = ±15 VRg = 0.5 W

5004.0VF, Forward Voltage (V)E, Energy Loss (mJ)

E, Energy Loss (mJ)

450

3.5Figure 4. Forward Characteristic, Diode (Typ.)

Eon, Tvj = 125°C
Eon, Tvj = 175°C
Eoff, Tvj = 125°C
Eoff, Tvj = 175°C

500

3.0Tvj = 25°C
Tvj = 125°C
Tvj = 175°C

VGE, Gate−Emitter Voltage (V)Figure 3. Transfer Characteristic, IGBT (Typ.)550

2.5Figure 2. Output Characteristic, IGBT (Typ.)Tvj = 25°C
Tvj = 125°C
Tvj = 175°C

42.0

VCE, Collector−Emitter Voltage (V)Figure 1. Output Characteristic, IGBT (Typ.)
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0

1.50200

400

600

800

1000

1200

1400

75
1600

500

12345IC, Collector Current (A)Rg, External Gate Resistance (W)Figure 5. Switching Losses Characteristic,
IGBT (Typ.)

Figure 6. Switching Losses Characteristic,
IGBT (Typ.)www.onsemi.com
56SNXH800H120L7QDSG

Tvj = 125°C
Tvj = 175°C

50403020100t, Switching Time (ns)200400

600

800

1000

1200

1400

1600

VCE = 600 V
VGE = ±15 V
Rg = 0.5 W
Tvj = 175°C
200

400

600

800

1000

1200

1400

40353025

VCE = 600 V
VGE = ±15 V
IF = 800 A

2015012345tdon
tr
tdoff
tf

100
VCE = 600 V
VGE = ±15 V
IC = 800 A
Tvj = 175°C012345IC, Collector Current (A)Rg, External Gate Resistance (W)Figure 9. Switching Time Characteristic,
IGBT (Typ.)

Figure 10. Switching Time Characteristic,
IGBT (Typ.)615101
VGE = 0 V
f = 100 kH
Tvj = 25°C

129630−3−6−9VCE = 600 V
IC = 800 A
Tvj = 25°C

−122061000

101600

Cies
Coes
Cres045

10000

1000.1

50Rg, External Gate Resistance (W)

100

1000

55

Figure 8. Switching Losses Characteristic,
Diode (Typ.)tdontrtdoff
tf

0

Tvj = 125°C
Tvj = 175°C

60

IF, Forward Current (A)

1000

1065

Figure 7. Switching Losses Characteristic,
Diode (Typ.)t, Switching Time (ns)0VCE = 600 V
VGE = ±15 V
Rg = 0.5 W

10000

IGBT // Diode Capacitance (nF)

Erec, Reverse Recovery Energy Loss (mJ)

60VGE, Gate−Emitter Voltage (V)Erec, Reverse Recovery Energy Loss (mJ)TYPICAL CHARACTERISTICS (continued)

40

60

80

100

−15012345VCE, Collector−Emitter Voltage (V)Qg, Gate Charge (mC)

Figure 11. Capacity Characteristic,
IGBT // Diode (Typ.)

Figure 12. Gate Charge Characteristic,
IGBT (Typ.)www.onsemi.com
66

SNXH800H120L7QDSGZthJC, Transient Thermal Impedance (°C/W)

0.1

0.01

0.0010.001

20000.01

10.110IC, Collector Current (A)

1000
800
600
VGE = ±15 V
Rg = 0.5 W
Tj = 175°C
010.1

10100

1200

00.01tp, Pulse Width (s)

1400

200

0.001
0.001

Figure 14. Transient Thermal Impedance,
Diode (Max.)

1600

400

0.01tp, Pulse Width (s)IC, ChipIC, Module

1800

0.1

Figure 13. Transient Thermal Impedance,
IGBT (Max.)

Thermistor Resistance (kW)ZthJC, Transient Thermal Impedance (°C/W)

TYPICAL CHARACTERISTICS (continued)

200

400

600

800

1000

1200

1400

1010.10.01
0255075100125150

175

VCE, Collector−Emitter Voltage (V)Thermistor Temperature (°C)

Figure 15. Reverse Bias Safe Operating Area,
IGBT // Diode

Figure 16. NTC Thermistor R−T Value (Typ.)www.onsemi.com
7MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONSPIM11, 152.00x62.15x17.00
CASE 180HTISSUE E

GENERICMARKING DIAGRAM*XXXXXXXXXXXXXXXXXXXXXX
2D
ATYYWWCODE

DOCUMENT NUMBER:DESCRIPTION:DATE 28 MAY 2024

XXXXX = Specific Device Code
AT= Assembly & Test Site CodeYYWW = Year and Work Week Code*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ G”, may or may not be present. Some products
may not follow the Generic Marking.

98AON55209H
PIM11, 152.00x62.15x17.00

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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