CONFERENCE AGENDA
Silicon Quantum Electronics Workshop 2015
Monday, 3 August
07:30 - 8:40

Registration

08:45 - 09:00

OpeningSession I: Single donor qubits

09:00 - 09:20

I-1 D. R. Luhman (Sandia National Laboratories, USA)
"Electron spin resonance of a phosphorous donor qubit in enriched silicon"

09:20 - 09:40

I-2 G. Tosi (University of New South Wales, Australia)"Electric drive and long-distance coupling of Si:P qubits"

09:40 - 10:00

I-3 M. G. House (University of New South Wales, Australia)"Radio frequency reflectometry measurement singlet-triplet states in Si:P quantum dots"

10:00 - 10:20

I-4 T. F. Watson (University of New South Wales, Australia)"Long spin lifetimes and high fidelity readout of electrons bound to single and few-donor dotsin silicon"

10:20 - 10:40

BreakSession II: Ensemble donor/acceptor qubits

10:40 - 11:00

II-1 M. L. W. Thewalt (Simon Fraser University, Canada)"Zero-field magnetic resonance of 31P in 28Si using donor bound exciton transitions"

11:00 - 11:20

II-2 P. Ross (University College London, UK)"Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon"11:20 - 11:40

II-3 B. J. Villis (University College London, UK)"Coherent creation and destruction of orbital wavepackets in Si:P with electrical and opticalread-out"

11:40 - 12:00

II-4 A. J. Sigillito (Princeton University, USA)
"Electron spin coherence of donors in germanium"

12:00 - 13:30

Lunch

13:30 - 13:50

II-5 C. D. Hill (University of Melbourne, Australia)"A surface code quantum computer in silicon"

13:50 - 14:10

II-6 P. A. Mortemousque (Keio University, Japan)"Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field"

14:10 - 14:30

II-7 D. P. Franke (Technical University of Munich, Germany)"Mechanical tuning of arsenic donors in silicon"

14:30 - 14:50

II-8 J. van der Heijden (University of New South Wales, Australia)"Double acceptor singlet-triplet relaxation"

14:50 - 15:20

BreakSession III: P-type qubits and nanowires
15:20 - 15:40

III-1 S. V. Amitonov (University of Twente, The Netherlands)"Single-charge occupation in single-hole transistors with implanted boron atoms"

15:40 - 16:00

III-2 R. Maurand (University Grenoble-Alpes and CEA, France)"Hole nanowire MOSFET: g-factor anisotropy, Pauli spin blockade and dispersive readout"

16:00 - 16:20

III-3 J. Ridderbos (University of Twente, The Netherlands)"G-factor anisotropy in Ge/Si core/shell nanowires quantum dots"

16:20 - 16:40

III-4 C. Kloeffel (University of Basel, Switzerland)"Spin-orbit interaction in silicon nanowires"

16:40 - 18:40

Poster Session

19:00 - 21:00

BanquetTuesday, 4 August
Session IV: Optically/MW coupled qubits
08:20 - 08:40

IV-1 M. J. Gullans (National Institute of Standards and Technology, USA)
"Interfacing semiconductor spin qubits with photons"

08:40 - 09:00

IV-2 X. Hu (University at Buffalo, USA)
"Decoherence of a driven spin qubit"

09:00 - 09:20

IV-3 J. Pla (University College London, UK)"Cavity-enhanced electron spin relaxation"

09:20- 09:40

IV-4 A. Laucht (University of New South Wales, Australia)"A dressed spin qubit in silicon"

09:40 - 10:00

BreakSession V: Si qubits

10:00 - 10:20

V-1 C. H. Yang (University of New South Wales, Australia)"A two qubit logic gate in silicon"

10:20 - 10:40

V-2 M. A. Fogarty (University of New South Wales, Australia)"Non-exponential fidelity decay in randomized benchamrking with low-frequency noise"

10:40 - 11:00

V-3 T. Ferrus (Hitachi Cambridge Laboratory, UK)"Wireless manipulation of quantum states in silicon isolated double quantum dots"

11:00 - 11:20

V-4 J. K. Gamble (Sandia National Laboratories, USA)
"Predicting the valley physics of silicon quantum dots directly from a device layout"

11:20 - 11:40

BreakSession VI: Si/SiGe qubits

11:40 - 12:00

VI-1 B. Thorgrimsson (University of Wisconsin-Madison, USA)
"Increasing the coherence times for an ac-gated hybrid quantum dot qubit"

12:00 - 12:20

VI-2 D. Kim (Yonsei University, South Korea)"Conditional coherent oscillations in capacitively coupled Si/SiGe quantum dot chargequbits"

12:20 - 13:50

Lunch

13:50 - 14:10

VI-3 P. Scarlino (TU Delft, The Netherlands)"High gate fidelity and second harmonic coherent driving of an electron spin in Si/SiGequantum dot"

14:10 - 14:30

VI-4 T. D. Ladd (HRL Laboratories, LLC, USA)"Control of exchange-coupled Si/SiGe dots"

14:30 - 14:50

VI-5 D. M. Zajac (Princeton University, USA)"A reconfigurable gate architecture for Si/SiGe quantum dots"

14:50 - 15:10

VI-6 K. Takeda (RIKEN, Japan)"A fast addressable single-spin qubit in a Si/SiGe double quantum dot with a micro-magnet"

15:10 - 15:40

Break
Session VII: Si nanodevices

15:40 - 16:00

VII-1 A. Rossi (University of New South Wales, Australia)"Direct current measurements and electron counting in a silicon quantum dot pump"

16:00 - 16:20

VII-2 G. Yamahata (NTT Basic Research Laboratories, Japan)"Ultrafast single-charge transfer in silicon up to 8 GHz"

16:20 - 16:40

VII-3 M. Tabe (Shizuoka University, Japan)"Dopant-cluster-assisted tunnelling in Si nanodevices"

16:40 - 17:00

VII-4 K. Ono (RIKEN, Japan)"Room-temperature single-electron transistor based on tunnel field-effect transistor (TFET)
and deep level"

17:00 - 17:20

VII-5 M. F. Gonzalez-Zalba (Hitachi Cambridge Laboratory, UK)"Dispersive spin readout of silicon double quantum dots"

17:20 - 17:40

VII-6 A. Chatterjee (University College London, UK)"Charge dynamics and spin blockade in a hybrid double quantum dot in silcon"

17:40

ClosingPoster session: Monday 3 August 16：40 - 18：40
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Influence of strain and electric fields on hyperfine couplings of shallow donors in silicon
M. Usman, C. D. Hill, R. Rahman, G. Klimeck, M. Y. Simmons, S. Rogge, and L. C. L. Hollenberg
Computational challenges in modeling silicon quantum information processing devices
A. D. Baczewski, J. K. Gamble, N. T. Jacobson, R. P. Muller, and E. Nielsen
Modeling open quantum system device operation with multi-valley effective mass theory
T. Jacobson, A. D. Baczewski, J. K. Gamble, R. P. Muller, E. Nielsen, M. Rudolph, P. Harvey-Collard,and M. Carroll
Designing a large scale quantum computer with classical and quantum simulations
F. A. Mohiyaddin, R. Rahman, R. Kalra, A. Laucht, G. Klimeck, A. S. Dzurak, and A. Morello
Multi-scale 4D modelling of Si qubit states
A. Andreev and D.A. Williams
Valley dependent spin splitting and spin relaxation in a silicon quantum dot
R. Ferdous, M. Veldhorst, Y.-L. Hsueh, C. H. Yang, F. A. Mohiyaddin, G. Klimeck, A. S. Dzurak, R.
RahmanTheory of g-factors in silicon quantum dots and other interesting quantum dot physics
R. Ruskov and C. Tahan
Atomistic modelling of metallic conduction limits in quasi 1-D silicon wires
Y.-H. M. Tan, H. Ryu, B. Weber, M. Y. Simmons, and G. Klimeck
Electrical characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
T. J. Knapp, R. T. Mohr, Y. S. Li, B. Thorgrimsson, R. H. Foote, X. Wu, D. R. Ward, D. E. Savage, M.
G. Lagally, M. Friesen, S. N. Coppersmith, and M. A. Eriksson
Transport through an impurity tunnel-coupled to a Si/SiGe quantum dot
R. H. Foote, D. R. Ward, J. R. Prance, J. K. Gamble, E. Nielsen, B. Thorgrimsson, D. E. Savage, A. L.
Saraiva, M. Friesen, S. N. Coppersmith, and M. A. Eriksson
Fabrication and characterization of gate-defined small Si-MOS quantum dot device
J. Yoneda, T. Honda, K. Takeda, M. Marx, T. Otsuka, T. Nakajima, M. R. Delbecq, S. Amaha, G.
Allison, T. Kodera, S. Oda, and S. Tarucha
A Si-MOS multi-quantum-dot device for two-qubit tomography experiments
J. C. C. Hwang, M. Veldhorst, C. H. Yang, C. M. Cheng, K. M. Itoh, A. Morello, and A. S. Dzurak
Dispersive readout of Si-MOS double quantum dot
C. M. Cheng, C. H. Yang, J. C. C. Hwang, M. Veldhorst, F. E. Hudson, K. M. Itoh, A. S. Dzurak, and C.
G. SmithPb centers in ambipolar silicon planar quantum dots
P. C. Spruijtenburg, F. Mueller, S. V. Amitonov, W. G. van der Wiel, and F. A. Zwanenburg
Physically-defined quantum dots fabricated on silicon-on-insulator substrate
T. Kodera, K. Horibe, K. Yamada, S. Ihara, T. Kambara, A. Andreev, D. A. Williams, Y. Arakawa, and S.
Oda
Towards single-electron pumping with 3 driving signals
R. Zhao, A. Rossi, and A. S. Dzurak
Device modelling for electron counting experiments in silicon single-electron pumps
Y. Sun, A. Rossi, and A. S. Dzurak

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Tunable coupling capacitance of double quantum dot by an electric field
T. Uchida, H. Sato, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi
Characterization of physically-defined double quantum dots on highly-doped silicon substrate
Y. Yamaoka, S. Oda, and T. Kodera
Detection of electronic states in doped silicon double quantum dot
T.-Y. Yang, Y. Yamaoka, A. Andreev, T. Ferrus, D. A. Williams, T. Kodera, and S. Oda
Unusually asymmetric bias triangles measured on a silicon double quantum dot
M. D. Stewart Jr., J. K. Perron, and N. M. Zimmerman
Optimizing charge qubit oscillations in double dot systems to unitary amplitude
J. Mosakowski, T. Ferrus, D. Williams, E. Owen, M. Dean, and C. Barnes
Physically-defined silicon triple quantum dots in metal-oxide-semiconductor structures
S. Hiraoka, K. Horibe, R. Mizokuchi, T. Kodera, and S. OdaHigh fidelity AC gate operation of the quantum dot hybrid qubit
C. Wong, S. Coppersmith, and M. Friesen
Nanocavity-enhanced spontaneous emission from isoelectronic centers in silicon
H. Sumikura, E. Kuramochi, H. Taniyama, and M. Notomi
Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications
K. Saeedi, M. Szech, P. Dluhy, J. Z. Salvail, K. J. Morse, H. Riemann, N. V. Abrosimov, N. Nötzel, K.
L. Litvinenko, B. N. Murdin, and M. L. W. Thewalt
Addressing allowed vs. forbidden clock transition of 209Bi donors in Si with circularly polarized
microwaves
T. Yasukawa, A. J. Sigillito, B. C. Rose, A. M. Tyryshkin, and S. A. Lyon
Pulsed electron spin resonance in the strong coupling regime
H. Huebl, C. W. Zollitsch, K. Müller, S. T. B. Goennenwein, R. Gross, and M. S. Brandt
Electron spin resonance spectroscopy of the defects in annealed γ-irradiated silicon
H. Saito, Y. Kusano, M. P. Vlasenko, L. S. Vlasenko, and K. M. Itoh
Reflectometry observation of inter-donor coupling
T. Kobayashi, J. van der Heijden, M. G. House, S. J. Hile, S. Barraud, R. Lavieville, M. Y. Simmons,and S. Rogge
Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
S. K. Gorman, M. A. Broome, J. G. Keizer, T. F. Watson, S. J. Hile, W. J. Baker, and M. Y. Simmons
Engineering inter-qubit exchange coupling between donor bound electrons in silicon
Y. Wang, A. Tankasala, L. C. L. Hollenberg, G. Klimeck, M. Y. Simmons, and R. Rahman
Control of two-electron spin correlations on precision-placed donors in Si
M. A. Broome, M. G. House, S. Hile, S. K. Gorman, J. Keizer, W. J. Baker, and M. Y. Simmons
Digital STM lithography for P-in-Si qubit devices
J. H. G. Owen, J. Ballard, E. Fuchs, C. Delgado, J. N. Randall, and J. R. Von Ehr
Progress towards the characterisation and fabrication of atomic and nanoscale donor devices insilicon
N. J. Curson, K. Sinthiptharakoon, V. Brázdová, T. Lim, A. Kölker, H. S. Solanki, J. Li, G. Aeppli, D. R.
Bowler, A. J. Fisher, and S. R. Schofield
The impact of dopant segregation on the carrier density in Si:P delta- and multi-layers
J. G. Keizer, S. R. McKibbin, S. Kölling, P. M. Koenraad, and M. Y. Simmons

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Fabrication and transport in counted donor devices using top-down ion implantation
E. Bielejec, J. L. Pacheco, M. Singh, D. R. Luhman, M. P. Lilly, and M. S. CarrollTowards fabrication of isotopically-enriched strained 28Si layers
Y. Hoshi, S. Tanaka, K. Sawano, K. M. Itoh, and N. Usami
Device and material characterization of in situ enriched 28Si films
K. J. Dwyer, H. S. Kim, D. S. Simons, A. N. Ramanayaka, and J. M. Pomeroy
Are Ge hut-wires candidates for spin qubits?
H. Watzinger, L. Vukušić, E. Lausecker, R. Kirchschlager, A. Truhlar, J. Kukučka, V. Sessi, M. Glaser,A. Rastelli, F. Schäffler, and G. Katsaros
Towards in-situ STM capacitance detection of buried nanostructures in silicon
H.-S. Kim, K. Dwyer, and J. Pomeroy
Deep level transient spectroscopy studies of quantumrelated test devices
B. C. Johnson, F. Hudson, and J. C. McCallum
Single photon emitting diode in silicon carbide
A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, S. Prawer, J. C.
McCallum, A. Gali, and B. C. Johnson
withdrawn
Dynamic nuclear polarization of bismuth donor nuclear spins in silicon induced by spin dependent
recombination of electronsP. A. Mortemousque, T. Sekiguchi, S. Rosenius, A. Truong, M. P. Vlasenko, L. S. Vlasenko, R. G.
Elliman, and K. M. ItohError detection and correction of single-electron transfer
H. Tanaka, G. Yamahata, K. Nishiguchi, and A. Fujiwara
Clock transitions in electrically controlled Si:P spin qubits
G. Tosi, F. A. Mohiyaddin, S. Tenberg, and A. Morello
Quantum memory in a single nucleus in silicon
S. Freer, S. S. Simmons, A. Laucht, F. A. Mohiyaddin, F. Hudson, K. M. Itoh, J. C. McCallum, D.
Jamieson, A. Dzurak, and A. Morello
Improved design and fabrication for Si/SiGe quantum dots with increased valley-splitting
M. Marx, K. Takeda, J. Yoneda, G. Allison, T. Honda, M. Delbecq, T. Otsuka, T. Nakajima, S. Amaha,
T. Kodera, and S. Oda
Spatially resolving coupled donor states in silicon
J. Bocquel, B.Voisin, J. Salfi, M. Usman, A. Tankasala, R. Rahman, G. Klimeck, M. Y. Simmons, L. C.
L. Hollenberg, and S. Rogge
Mixing of crystal field levels of individual erbium ions in silicon
G. de Boo, Q. Zhang, C. Yin, M. Rancic, B. Johnson, J. C. McCallum, M. J. Sellars, and S. Rogge