PreliminaryHigh Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

Sensitivity Wavelength Range: InGaAs 800-2600nm / SI 250-1100nm
The MTPD2601SIW-100 from Marktech, a high sensitivity and high reliability product series, is ideallysuited for applications requiring a wide spectral bandwidth. Custom packaging for this is also available.
FEATURESAPPLICATI ONS> High Speed Response> High Speed Optical Communications> Industrial Controls> Gas/Water Analysis> TO-39 Hermetically Sealed Package> Active Area of 1 .0mm Ф / High Sensitivity> Spectral Range Si: 250-1100 InGaAs: 800-2600nm> LIDAR> MedicalAbsolute Maximum Ratings (Ta=25ºC)
ITE M SS YM B O L

R ATI N G S

UNIT

Active Area

Ф1 .0mm

Operating Temperature Range

Topr-40 to +85ºC

Storage Temperature Range

Tstg-40 to +1 25ºC

InGaAs Electrical & Optical Characteristics (Ta = 25ºC)
ITE M SS YM B O L

C ON D ITION S

MIN

TYP

M AX

UNIT

Breakdown Voltage

VR

IR=100 uA----

1V

Sensitivity Range

λVR=0V

800--2600nm

Dark CurrentID

VR=0V--80--nA

Dark Current

ID

VR=1V--

100--uA

CapacitanceC

VR=0V--

3100

--

pF

CapacitanceC

VR=1 V--500--

pF

ResponsivityR

λ=2400nm--

1.24--

A/W

RS
QE

VR=1 0mV--

0.5--kΩλ=1840n m

--

72--

%

Shunt Resistance
Quantum Efficiency

2023-01-27

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1High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

Si Electrical & Optical Characteristics (Ta = 25ºC)
ITE M SS YM B O L

C O N D I TI O N S

MINTYPM AXUNIT

IR=1 0uA50----Vnm

Breakdown Voltage

VR

Sensitivity Range

λ250

--

11 00

Peak Sensitivity

λp

--

950

--

Dark Current

ID

VR=5V

--

10

CapacitanceC@1MHz, VR=0V

--

-20

CapacitanceC@1MHz, VR=5V

--

68pF

Responsivity

R

VR=0V, λ=365nm

--

0.22

--

A/W

Responsivity

R

VR=0V, λ=633nm--0.40--

A/W

Shunt Resistance

RS

VR=1 0mV

500800--MΩ

Response Time @ 635nm

TR

RL=50Ω, VR=5V20------

nmnApFns2023-01-27

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High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

Package Dimensions
φ9.14
φ8.1
φ5.9
InGaAs-PD

Si-PD

Active Area:[φ1 . 0 ]Active Area:[1.08×1.08]

13.2 ±0.50.6

4.15

Glass3123-φ0.45 ± 0.1①InGaAs PD Anode5.08②Si PD Anode③Cathode com(Case)

The information contained herein is subject to change without notice.

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

2023-01-27

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High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

InGaAs Spectral Responsivity

InGaAs Quantum Efficiency

The information contained herein is subject to change without notice.

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

2023-01-2 74

High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

InGaAs Dark Current vs Reverse Voltage

InGaAs Forward Current vs Forward Voltage

The information contained herein is subject to change without notice.

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2023-01 -275High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

Si Dark Current vs Reverse Bias (23°C)

Dark Current (A)Capacitance (pF)

Si Capacitance vs Reverse Bias

Reverse Bias Voltage (V)Reverse Bias Voltage (V)Si Quantum Efficiency (23°C)

Dark Current (A)Quantum Efficiency (%)

Si Dark Current vs Temperature (Vr=10V)

Temperature (°C)

Wavelength (nm)2023-01 -27

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High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SIT9-1.0D

Si Series 4 Spectral Responsivity

Responsivity (A/W)

Photodiode Responsivity by Series

Wavelength (nm)2023-01 -27

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