May 22, Wednesday
REGISTRATION

08:30

09:00

Surface
ActivatedBonding (SAB)(1)

22O-01(OPENING REMARKS)[Keynote] Microsystem Integration and Packaging – A Chronicle of the Surface Activated Bonding and its Future Outlook
Tadatomo Suga, Meisei University, Japan

09:40

Co-Chairs:
F. Fournel
E. Higurashi

22O-02

Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
Yutaka Ohno, Tohoku University, Japan

22O-03

Effect of annealing temperature on diamond/Si interfacial structure
Jianbo Liang, Osaka City University, Japan

10:00

BRAEK

10:20-10:40

10:40

11:00

11:20

11:40

12:00

Surface
ActivatedBonding (SAB)(2)
Co-Chairs:
I. RaduJ. M Song

22O-04SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 ºC
Fengwen Mu, The University of Tokyo, Japan

22O-05

SOI wafer fabricated with extra thick deposited BOX layer using surface activated bonding at room temperature for customized powerdevices
Yoshihiro Koga, SUMCO corp., Japan

22O-06Tiny Integrated Laser by Room Temperature Surface Activated Bonding
Arvydas Kausas, Institute for Molecular Science, Japan22O-07

Oxide Removal for Low-Temperature Metal Thermo-Compression Wafer Bonding
Bernhard Rebhan, EV Group, Austria

22O-08High Yield Chip-on-wafer Low Temperature Plasma Activated Bonding for III-V/Si Hybrid Photonic Integration
Takehiko Kikuchi, Sumitomo Electric Industries, Ltd., Japan

12:20-12:30(transfer, 5 minutes' walk)

12:30-13:40

LUNCH <Honda no Mori>

13:40-15:00

SHORT PRESENTAION for Poster 1 <Honda no Mori>
MC: N. Kawamata, H. Ishida

15:00-16:10

COFFEE BRAEK / POSTER 1 <Honda no Mori>

16:10-17:30

SHORT PRESENTAION for Poster 2 <Honda no Mori>
MC: N. Kawamata, H. Ishida

17:30-17:40(transfer, 5 minutes' walk)

17:50

NOH STAGE

18:30-19:00(transfer, 20 minutes' walk)

19:00

BANQUET <Gojukken Nagaya, Kanazawa Castle>

May 23, Thursday
08:40

09:20

09:40

Roles of Lowtemperature
Bonding in 3D
and HeteroIntegration
Co-Chairs:
K. Kurabayashi
L. DiCioccio

10:00

23O-01[Keynote] Where is the Sweet Spot for Panel Level Packaging?
Tanja Braun, Fraunhofer IZM, Germany

23O-02

Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package
Kai Ming, Yang, Unimicron Technology Corp., Taiwan

23O-03[Invited] Robustness and reliability challenges for hybrid bonding integration: a review
Stephane Moreau, Univ. Grenoble Alpes, CEA, LETI, France

23O-04

Effect of N2 plasma treatment in Cu/SiO2 hybrid bonding using ultra-thin manganese film
Kazumichi Tsumura, Toshiba Corporation, Japan

COFFEE BREAK

10:20-10:40

10:40

11:00

Fundamentals ofNano-bonding
Co-Chairs:
K. H. LeeT. Shimatsu

11:20

23O-05[Invited] Room temperature GaN-Si bonding via an intermediate atomic-layer-deposition Al2O3 layer by using O Ion Beam
Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences, China

23O-06Pre-bonding Characterization of SiCN Enabled Wafer Stacking
Lan Peng, IMEC, Belgium

23O-07

Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy
Fumihiro Inoue, IMEC, Belgium

11:40-11:50(transfer, 5 minutes' walk)

11:50-13:00

LUNCH <Honda no Mori>

13:00-13:50

POSTER 2 <Honda no Mori>

13:50-14:00(transfer, 5 minutes' walk)

14:00

14:40

15:00

Bonding
Technologies for
3D Integration(1)
Co-Chairs:
G.-Q. Lu
S. Moreau

23O-08[Keynote] Die to wafer direct bonding: from fundamental mechanisms to optoelectronic and 3D applications
Frank Fournel, CEA-LETI, France

23O-09Multichip thinning technology with temporary bonding for multichip-to-wafer 3D integration
Sungho Lee, Tohoku University, Japan

23O-10[Invited] Die to die high yield DBI assembly for true 3D interconnect
Belgacem Haba, Xperi corp., USA

COFFEE BRAEK

15:20-15:40

15:40

23O-11[Invited] Low-temperature Silver Sintering for Bonding 3D Power Modules
Guo-Quan Lu, Virginia Tech, USA

16:00

23O-12[Invited] Wafer Bonding, A Key Stage For Power Devices
Lea Di Cioccio, Univ. Grenoble Alpes, CEA, LETI, France

23O-13

Impact of Emitter Thermal Shunt for InP-based Double-Heterojunction Bipolar Transistors on SiC Substrate
Yuta Shiratori, NTT Corporation, Japan

23O-14

Room temperature bonding of GaN on single-crystal diamond by using Mo/Au nano-adhesion layer
Kang Wang, Xi'an Jiaotong University, China

23O-15[Invited] Thermodynamic and Kinetic Effects on Microstructure Evolution in Hybrid Low Temperature Solder/High-Sn Solder Joints
Yaohui Fan, Purdue University, USA

17:20

23O-16[Invited] Low Temperature Soldering: Enabling Advancements in Packaging
Morgana de Avila Ribas, MacDermid Alpha Electronics Solutions, India

17:40

23O-17

Electroplating of Three-Dimensional Sn-rich Solder for MEMS Packaging Applications
Ji Fan, Huazhong University of Science and Technology, China

16:20

PowerApplications andSolder Bonding

16:40

17:00

Co-Chairs:
T. BraunM. Howlader

18:00-19:00(transfer, 20 minutes' walk)

19:00

CONFERENCE RECEPTION <Tokyu Hotel>

May 24, Friday
08:20

09:00

09:20

09:40

Low-temperature
Bonding for
MEMS and Microfluidic Devices
Co-Chairs:
W.-P. Dow
B. Corbett

10:00

24O-01[Keynote] Flexible Sensors – Materials, Interfaces and Surfaces
Jamal Deen, McMaster University, Canada

24O-02[Invited] System integration of nanostructured materials for point-of-care immune biosensing
Younggeun Park, University of Michigan, USA

24O-03Wafer level low temperature bonding of industrial glass substrates for life science
Anke Sanz-Velasco, IMT Masken und Teilungen AG, Switzerland

24O-04

Adhesive Wafer Bonding for CMOS based Lab-on-a-Chip Devices
Werner J. Karl, X-FAB MEMS Foundry Itzehoe GmbH, Germany

24O-05

Low temperature covalent wafer bonding for X-ray imaging detectors
Nasser Razek, G-Ray Medical & Industries, Switzerland

COFFEE BREAK

10:20-10:40

10:40

11:00

11:20

11:40

Bonding
Technologies for
HeteroIntegration
Co-Chairs:
C. ChenN. Shigekawa

12:00

24O-06[Invited] Heterogeneous material integration and manufacturing using wafer bonding technology
Ionut Radu, SOITEC, France

24O-07

Ohmic InP/Si Direct Bonding
Ryoichi Inoue, Kyoto University, Japan

24O-08High bonding yield and brighter integrated GaN LED and Si-CMOS
Kwang Hong Lee, Singapore-MIT Alliance for Research & Technology, Singapore

24O-09[Invited] Micro-transfer-printing for heterogeneous integration
Brian Corbett, Tyndall National Institute, Ireland

24O-10[Invited] Integration of Two-Dimensional Materials: Recent Advances and Challenges
Matiar Howlader, McMaster University, Canada

LUNCH

12:20-13:50

13:50

24O-11[Invited] Electroplated Cu Bump with Ultra-Large Grain without Thermal Annealing and Kirkendall Void at the Interface of Cu/Sn Joint
Wei-Ping Dow, National Chung Hsing University, Taiwan

14:10

24O-12

Microstructural Effects on Electrodeposited Copper Direct Bonding
Jenn-Ming Song, National Chung Hsing University, Taiwan

24O-13[Invited] Low-temperature Cu-to-Cu direct bonding enabled by highly (111)-oriented and nanotwinned Cu
Chih Chen, National Chiao Tung Univ., Taiwan

24O-14

Low temperature direct bonding of nanotwinned Ag thin films
Fan-Yi Ouyang, National Tsing Hua University, Taiwan

15:10

24O-15Light Enhanced Cu to Cu Bonding with Different Electromagnetic Radiations
David Tarng, Advanced Semiconductor Engineering Group, Taiwan

15:30

24O-16

Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding
Kosuke Yamada, Waseda University, Japan

14:3014:50

Bonding
Technologies for
3D Integration(2)
Co-Chairs:
C. Handwerker
T. Gregorich

COFFEE BRAEK

15:50-16:10

16:10

Characterizationand Emerging
Technilogies

24O-17[Keynote] Non-Destructive Characterization of Advanced IC Packages with Buried Features Using 3D X-ray
Thomas Gregorich, Carl Zeiss SMT Inc., USA

16:50

Co-Chairs:
J. DeenN. Hosoda

24O-18[Keynote] Attachment and anti-attachment structures in plants as concept generators for bioinspired technical materials systems
Thomas Speck, University of Freiburg, Germany

17:30

Presenter:
H. Takagi

AWARDS

17:50

Presenter:
T. Suga

CLOSING REMARKSSHORT PRESENTAION for Poster 1

Bonding
Technologies for3D and HeteroIntegration

22P-01

Wafer-level hybrid bonding for fine-pitch Cu/Interlayer-dielectric bonding
Masahisa Fujino, AIST, Japan

22P-02

Triple-Stacked Wafer-to-Wafer Hybrid Bonding for 3D Structured Image Sensors
Yuki Honda, NHK Science and Technology Research Laboratories, Japan

22P-03

Evaluation of Adhesive Fracture Energy of Polyimide Interlayer Dielectric Film for Redistribution Layer of Semiconductor Package
Kenta Ono, Graduate School of Shibaura Institute of Technology, Japan

22P-04Cure Shrinkage Behavior Analysis in Ultraviolet Curable Adhesive using Finite Element MethodYuga Sato, Graduate School of Shibaura Institute of Technology, Japan

22P-05

Fatigue Life Prediction of BGA Solder Joint with Consideration of Microstructural Coarsening
Kouichi Moroka, Graduate School of Shibaura Institute of Technology, Japan

22P-06

Effect of Nitride Passivation on Cu Surface for Low Temperature Cu-to-Cu Bonding
Haesung Park, Seoul National University of Science and Technology, Korea

22P-07

Copper direct bonding with short time and excellent electrical property by (111)-oriented nano-twinned copper
Kai Cheng Shie, National Chiao Tung University, Taiwan

22P-08

Low Temperature Cu-to-Cu Direct Bonding with Thin Gold Capping on Highly (111)-orientated Nanotwinned Cu Films
Fu-Chain Chen, National Chiao Tung University, Taiwan

22P-09Low temperature Au-Au direct bonding with highly (111)-oriented Au films
Wei-You Hsu, National Chiao Tung University, Taiwan

22P-10

Low temperature all-Cu bonding via Cu-nanoparticle paste sintering in Pt-catalyzed formic acid vapor
Fengwen Mu, The University of Tokyo, Japan

22P-11

Low temperature copper-copper bonding in ambient air using hydrogen radical pretreatment
Seongbin Shin, The University of Tokyo, Korea22P-12

Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam
Yutaka Ohno, Tohoku University, Japan

22P-13

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
Yasuo Shimizu, Tohoku University, Japan

22P-14Fabrication of Diamond/Cu Direct Bonding for Power Device Application
Shinji Kanda, Osaka City University, Japan

22P-15

Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions
Takashi Hishida, Osaka City University

22P-16

Bonding strength evaluation of Al foil/AlN junctions by surface activated bondingShotaro Horikawa, Osaka City University, Japan

22P-17A polyimide film/aluminum foil junction by modified surface activated bonding
Hidemasa Akazawa, Osaka City University, Japan

22P-18

Lithium niobate-on-insulator waveguide on Si substrate fabricated by room temperature bonding
Ryo Takigawa, Kyushu University, Japan

22P-19Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma
Michitaka Yamamoto, The University of Tokyo, Japan

22P-20Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications
Gen Yonezawa, Sony Corp., Japan

22P-21Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding
Takayuki Saito, Canon Anelva Corporation, Japan

22P-22

Atomic Diffusion Bonding of Wafers using Thin Nb Films
Miyuki Uomoto, Tohoku University, Japan

22P-23

Atomic Diffusion Bonding of Wafers using a-Ge Films with Extremely Low Electrical Conductivity
Arina Muraoka, Tohoku University, Japan

22P-24

Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding
Shigenobu Matsuda, Tohoku University, Japan

13:40-15:00
May 22

Surface
Activated
Bonding (SAB)

Atomic Diffusion
Bonding (ADB)SHORT PRESENTAION for Poster 2

RelatedTechnologies for
Low-temperature
Bonding

New Processes
for Lowtemperature
Bonding

16:10-17:30
May 22MEMS andPower
Applicaiotns

Surface
Activated
Bonding (SAB)

22P-25

Leading edge review: What is an important factor of CMP consumables for 3D Integration Bonding?
Michio Uneda, Kanazawa Institute of Technology, Japan

22P-26

III-nitride epitaxy by ion filtered inductively coupled plasma MOCVDYi Luo, Tsinghua University, China

22P-27

Direct bonding of (111) single crystal diamond substrate onto Si wafer by hydrophilic wafer bonding
Takashi Matsumae, AIST, Japan

22P-28Plasma-activated direct bonding of coated optical glasses
Pascal Birckigt, Fraunhofer Institute for Applied Optics and Precision Engineering, Germany

22P-29Wavelength-Conversion Material-Mediated Semiconductor Bonding
Kodai Kishibe, Kyoto University, Japan

22P-30

Solution-Process ZnO-Mediated Semiconductor Bonding
Tatsushi Yamashita, Kyoto University, Japan

22P-31

Hydrogel-Mediated Semiconductor Bonding
Kodai Kishibe, Kyoto University, Japan

22P-32

Low temperature polyimide-to-polyimide direct bonding
Hong-Che Liu, National Chiao Tung University, Taiwan

22P-33Sweat Glucose Sensing by Directly Bonded Thin Films
Maksud Alam, McMaster University, Canada

22P-34Novel Gratings for Astronomical Observations Fabricated by Latest Technologies
Noboru Ebizuka, Riken, Japan

22P-35

Evaluation of Au-Au bonding after annealing for getter activation -Fabrication of all-sapphire Cs gas cell for miniature atomic clockYuichi Kurashima, AIST, Japan

22P-36

Stacking 4” Si Wafer with Parallel 3-Stepped Micro-Trenches to Deposit Superconducting Material for Magnetic Energy Storage
Minoru Sasaki, Toyota Technological Institute, Japan22P-37

Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device
Kiichi Nagata, Graduate School of Shibaura Institute of Technology, Japan

22P-38High Temperature Fatigue Crack Propagation Characteristics of Pressureless Sintered Silver Nanoparticles
Koji Osaki, Graduate School of Shibaura Institute of Technology, Japan

22P-39Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device
Hiroshige Sugimoto, Graduate School of Shibaura Institute of Technology, Japan

22P-40

Low temperature wafer bonding with gas cluster ion beams
Noriaki Toyoda, University of Hyogo, Japan

22P-41Room Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers
Eiji Higurashi, AIST, Japan

22P-42

Room Temperature Bonding of Quartz Glass using Aluminum Oxide Intermediate Layer
Kai Takeuchi, The University of Tokyo, Japan

22P-43

Room temperature SiC wafer bonding using SAB methods
Fengwen Mu, The University of Tokyo, Japan

22P-44GaN-SiC and GaN-diamond integration via room temperature bonding
Tadatomo Suga, The University of Tokyo, Japan

22P-45The integration of Ga 2O3 on SiC at room temperature by surface activated bonding method
Yang Xu, Institute of Microelectronics of Chinese Academy of Sciences, China

22P-46

Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS
Zexin Wan, Osaka City University, Japan

22P-47

Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance
Moritake Sakihara, Osaka City University, Japan