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onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/orsubsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

DATA SHEET
www.onsemi.com

Silicon Carbide (SiC)
MOSFET - EliteSiC,
32mohm, 650 V, M3S,
TO247-4L

V(BR)DSSRDS(ON) TYP

ID MAX

650 V

32 mW @ 18 V

50 A

DNTH4L032N065M3S

S1: Kelvin Source
S2: Power Source

GFeatures• Typical RDS(ON) = 32 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 55 nC)• High Speed Switching with Low Capacitance (Coss = 114 pF)• 100% Avalanche Tested• This Device is Halide Free and RoHS Compliant with exemption 7a,

S2

S1

N−CHANNEL MOSFET

Pb−Free 2LI (on second level interconnection)

Applications• SMPS, Solar Inverters, UPS, Energy Storage, EV Charging

DS2
S1 G

InfrastructureTO−247−4L
CASE 340CJMAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

650

V

Gate−to−Source Voltage

VGS−8/+22VID

50

AContinuous Drain Current

TC = 25°C

Power Dissipation

PD

187

W

TC = 100°C

ID

30

A

PD

94

W

Pulsed Drain Current (Note 2)

TC = 25°C,
tp = 100 ms

IDM

163

A

Continuous Source−DrainCurrent (Body Diode)

TC = 25°C,
VGS = −3 V

IS

29

A

Continuous Drain Current(Note 1)
Power Dissipation

TC = 100°C,
VGS = −3 V
Pulsed Source−Drain Current(Body Diode) (Note 2)

16

TC = 25°C,
VGS = −3 V,
tp = 100 ms

ISM

137

A

Single Pulse Avalanche Energy (ILPK = 16.7 A,
L = 1 mH) (Note 3)

EAS

139mJ

Operating Junction and Storage Temperature
Range

TJ, Tstg−55 to+175°C

TL

270°C

Lead Temperature for Soldering Purposes(1/8″ from case for 10 secs)

MARKING DIAGRAM

H4L032
065M3SAYWWZZ

H4L032065M3S = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ= Lot Traceability

ORDERING INFORMATIONDevicePackageShipping

NTH4L032N065M3S

TO−247−4L

30 Units /Tube

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. 30 A is limited by package. Power chip max drain current is 35 A if limited bymax junction temperature.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 139 mJ is based on starting TJ = 25°C, L=1 mH, IAS=16.7 A,VDD = 100 V, VGS = 18 V.

© Semiconductor Components Industries, LLC, 2023

September, 2024 − Rev. 2

1Publication Order Number:
NTH4L032N065M3S/D

NTH4L032N065M3S
THERMAL CHARACTERISTICS
Symbol

Value

Unit

Thermal Resistance, Junction−to−Case (Note 4)

Parameter

RqJC

0.80°C/W

Thermal Resistance, Junction−to−Ambient (Note 4)

RqJA

40

4. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter

SymbolValueUnitVGSop−5...−3/+18

V

Operation Values of Gate−to−Source Voltage

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)Parameter

SymbolTest Conditions

MinTypMax

Drain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA, TJ = 25°C

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJ

ID = 1 mA, Referenced to 25°C

IDSS

Unit

650−−V−

90−mV/°C

VDS = 650 V, TJ = 25°C−−10mAVDS = 650 V, TJ = 175°C (Note 6)−−500mA

VGS = −8/+22 V, VDS = 0 V−−±1.0mAmW

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current

IGSS

ON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward TransconductanceRDS(on)VGS = 18 V, ID = 15 A, TJ = 25°C

−3244

VGS = 18 V, ID = 15 A, TJ = 175°C(Note 6)−49−

VGS = 15 V, ID = 15 A, TJ = 25°C

−41−

VGS = 15 V, ID = 15 A, TJ = 175°C(Note 6)−52−

VGS(TH)

VGS = VDS, ID = 7.5 mA, TJ = 25°C

2.0

2.9

4.0

VgFS

VDS = 10 V, ID = 15 A
(Note 6)

−

9.9−

S

VDS = 400 V, VGS = 0 V, f = 1 MHz(Note 6)−1410−

pF

−

114−

−

9.2−

−

55−

−

15−

−

14−

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS

Output Capacitance

COSSReverse Transfer Capacitance

CRSSTotal Gate Charge

QG(TOT)

VDD = 400 V, ID = 15 A,
VGS = −3/18 V (Note 6)nC

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

Gate ResistanceRG

f = 1 MHz−

5.0−

W

Turn−On Delay Timetd(ON)8.8−

nstd(OFF)

VGS = −3/18 V, VDD = 400 V,
ID = 15 A, RG = 4.7 W, TJ = 25°C
(Notes 5, 6)−Turn−Off Delay Time

−

31−

tr−

12−

Fall Timetf−

9−Turn−On Switching Loss

EON−

33−

Turn−Off Switching Loss

EOFF−

16−

Total Switching LossETOT−49−

SWITCHING CHARACTERISTICS

Rise Timewww.onsemi.com2mJNTH4L032N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter

SymbolTest Conditions

MinTypMax

Unit

Turn−On Delay Timetd(ON)

−

7.8−

ns

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, VDD = 400 V,
ID = 15 A, RG = 4.7 W, TJ = 175°C(Notes 5, 6)−

37−

SWITCHING CHARACTERISTICS

Rise Time

tr−

12−

Fall Time

tf−

11−

Turn−On Switching Loss

EON−

31−

Turn−Off Switching Loss

EOFF−

25−

Total Switching LossETOT−56−

ISD = 15 A, VGS = −3 V, TJ = 25°C−

4.56.0

ISD = 15 A, VGS = −3 V, TJ = 175°C(Note 6)−

4.2−

VGS = −3 V, IS = 15 A,dI/dt = 1000 A/ms, VDS = 400 V(Note 6)

−

15.5−

−

8.9−

6.6−

mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage

VSDV

ns

Reverse Recovery TimetRR

Charge Timeta

Discharge Timetb−

Reverse Recovery Charge

QRR

−72−

nC

Reverse Recovery Energy

EREC−

4.6−

mJ

Peak Reverse Recovery Current

IRRM

−

9.3−

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. EON/EOFF result is with body diode.
6. Defined by design, not subject to production test.

www.onsemi.com
3

NTH4L032N065M3S
TYPICAL CHARACTERISTICS
300

300

TJ=25°C

250
ID, Drain Current (A)ID, Drain Current (A)

250
200
150
100
VGS=10V
VGS=12V
VGS=15V
VGS=18V
VGS=20V50
0

TJ=175°C

024681012VDS , Drain to Source Voltage (V)200150100
VGS=10V
VGS=12V
VGS=15V
VGS=18V
VGS=20V

5014016024681012VDS , Drain to Source Voltage (V)250

VDS=10V

ID, Drain Current (A)

200

150

100500TJ=−55°C
TJ=25°C
TJ=175°C
02468101214VGS, Gate to Source Voltage (V)

16120

10080

6040201868Drain to Source On Resistance (Normalized)

RDS(ON), Drain to Source On Resistance (mW)70605040302010010203040ID, Drain Current (A)101214VGS, Gate to Source Voltage (V)1618Figure 4. On−Resistance vs. Gate Voltage

VGS=12V
VGS=15V
VGS=18V

TJ=25°C

TJ=25°C
TJ=175°C

ID=15A

Figure 3. Transfer Characteristics

8016Figure 2. Output Characteristics

RDS(ON), Drain to Source On Resistance (mW)

Figure 1. On−Region Characteristics

1450

1.8
1.6

ID=15A
VGS
DS=18V

1.4
1.2
10.8
0.6
−10060Figure 5. On−Resistance vs. Drain Current−50050100
TJ, Junction Temperature (°C)

150

Figure 6. On−Resistance vs. Junction
Temperature

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4200

NTH4L032N065M3S
TYPICAL CHARACTERISTICS
25Eoss, Stored Energy (uJ)C, Capacitance (pF)

10000

1000

100VGS=0V
TJ=25°C
f=1MHz1010.1

VGS=0V
TJ=25°C
f=1MHz2015105C ISS
C OSS
C RSS
110100VDS, Drain to Source Voltage (V)0650

0Figure 7. Capacitance Characteristics

ID=15A600−12−10−8−6−4−2

TJ=25°Ct p<20ms

159600−40−60−80−100

3−3700−20

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V

ID, Drain Current (A)12

VDD=400V
VDD=560V
VDD=650V

00102030
40QG, Gate Charge (nC)−12050−14060
VDS, Drain to Source Voltage (V)Figure 9. Gate Charge Characteristics−12−10−8−6−4

TJ=175°Ct p<20ms−20Figure 10. Reverse Conduction
Characteristics
1000

0−20

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V

ID, Drain Current (A)−14ID, Drain Current (A)200300400500
VDS, Drain to Source Voltage (V)Figure 8. Stored Energy vs. Drain−to−Source
Voltage−1418
VGS, Gate to Source Voltage (V)100−40−60−80−10010010pulse duration =DCpulse duration =1mspullse duration =100us
pulse duration =10us
pulse duration =1us
Rdson
BV boundary
pulse boundary

1−120−140

SINGLE PULSE
TJ = Max rated
RqJC = 0.8 oC/W
TC = 25oC

0.1

VDS, Drain to Source Voltage (V)101100
VDS, Drain to Source Voltage (V)Figure 11. Reverse Conduction Characteristics

Figure 12. Safe Operating Area

0.1

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51000

NTH4L032N065M3S
TYPICAL CHARACTERISTICS
200

100

Rthjc=0.8°C/W

PD, Power Dissipation (W)IAS, Avalanche Current (A)

180

10120
1008060

2010.01

14040

TJ=25°C
TJ=150°C
0.001

1600.1
1tAV, Time in Avalanche (ms)01025Figure 13. Avalanche Current vs. Pulse Time(UIS)

17540
3020E tot
E on
E off

103.0

4.5

6.0

TJ =175°C
VGS=−3/18V
VDD=400V
RG=4.7W

50
Switching Loss (uJ)

Switching Loss (uJ)15060
TJ =25°C
VGS=−3/18V
VDD=400V
RG=4.7W

50

9.0
10.5
7.5
ID, Drain Current (A)

12.0

40
3020E tot
E on
E off

1013.503.0

15.0

Figure 15. Inductive Switching Loss vs. DrainCurrent

8060
40

E tot
E on
E off200300

6.0

7.5
9.0
10.5
ID, Drain Current (A)

12.0

13.5100
TJ =25°C
VGS=−3/18V
ID=15A
RG=4.7W

E, Inductive Switching Loss (uJ)100

4.5Figure 16. Inductive Switching Loss vs. Drain
Current120

Switching Loss (uJ)

75
100
125
TC, Case Temperature (°C)

Figure 14. Maximum Power Dissipation vs.
Case Temperature

60

050

400
500
VDS, Drain−to−Source Voltage (V)

60
E tot
E on
E off

40

200600

TJ =25°C
VGS=−3/18V
VDD=400V
ID=15A80

1Figure 17. Inductive Switching Loss vs. Drain
Voltage

234567RG, Gate Resistance (W)8910Figure 18. Inductive Switching Loss vs. Gate
Resistancewww.onsemi.com
6NTH4L032N065M3S
TYPICAL CHARACTERISTICS

E, Inductive Switching Loss (uJ)70
TJ=25°C
VGS=−3/18V
VDD=400V
ID=7.5A

60
504030E tot
E onE off

20
1001

234567RG, Gate Resistance (W)8910Figure 19. Inductive Switching Loss vs. Gate
Resistance
ZqJC , Transient Thermal Impedance (°C/W)

1
D=0 is Single Pulse

0.1

t10.01
1e−05

1e−04

D=0.00D=0.01
D=0.02D=0.05
D=0.10D=0.20D=0.50Notes:ZθJC(t)=0.8°C/W
TJM=PDMxZθJC(t)+TC
Duty Cycle,D=t1/t
1 /t2

PDM
t21e−03
1e−02
t, Rectangular Pulse Duration (sec)Figure 20. Thermal Response Characteristics

www.onsemi.com
71e−01

1e+00

MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−4LD
CASE 340CJISSUE A

DOCUMENT NUMBER:DESCRIPTION:

98AON13852G
TO−247−4LD

DATE 16 SEP 2019

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

onsemi andare trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2016www.onsemi.com

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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