ધ৖ఐ৾੄ॼঀॸॡঀট४‫ش‬উছॵॺইज़‫ش‬঒਴ਛ  ফ২َરೢૼ୒ೖُਭೖ

ਉ৕ীੰચ 67(0('6 ঐॵআথॢपेॊਉ৕ढ़ছ঒भ૭ଳ৲

Development of quantitative atomic resolution STEM-EDS
mapping for materials research
KEY WORDS

Atomic resolution STEM-EDS, Crystal Interfaceਭೖ঻‫؟‬ിম৥ึ‫ূق‬਎প৾‫ك‬Awardee : Akihito Kumamoto (The University of Tokyo)

໪ਏْOverviewٓઽ୷ଓਫૼ୒॑࿌ൗखञ௒ਪ්ૌ஑ਗ਼৕ႀ๶ྰ‫ق‬67(0‫ك‬धৈ૎২ऩग़ॿঝॠ‫ش‬ীങ஑;଍ী୾ীෲ‫'(ق‬6‫॑ك‬ৈ২प੆়घॊऒधपेढथ‫ؚ‬੥အ౫મরभਉ৕ढ़ছ঒॑ઉଳदऌॊ੪ಞীෲ১॑નয়खੰෲ੍ରपણ৷खथःॊ‫؛‬মু১दम‫ؚ‬੥အরभ৸੪ಞ॑ৌ଴
पਉ৕ীੰચद੪ಞ௙શ‫؞‬૭ଳ৲ऋ૭ચधऩॊ‫؛‬ऒभৗু১॑౫મ৫৅੍॑ରघॊञीभৗྜྷऩॖও‫ش‬४থॢ১धखथ઀੧ख‫ؚ‬ളਯभ੪ಞऋ೴૔घॊള়౫મभଂਚଡୗੰෲपૢ৷खथःॊ‫؛‬
Atomic resolution elemental analytical method is developed by combining aberration-corrected scanning transmission electron
microscopy (STEM) with highly sensitive energy dispersive X-ray spectroscopic analysis (EDS). In this method, it is possible toidentify all the elements in the crystals with atomic resolution. We offer this novel imaging technique to support a wide range ofresearch for material science. For example, we apply this approach to the local structural and chemical analysis of very complex
heterointerface within composite materials at the level of single atomic columns.

ਉ৕ীੰચীෲॖও‫ش‬४থॢभ੦ೕૼ୒

ೄ੪ಞള়౫મभଂਚଡୗੰෲषभૢ৷

Key technology for atomic resolution analytical imaging

Local structural analysis of composite materials$O়স $O1ྃ੆ம়ੀએभਉ৕५ॣ‫ش‬ঝଡୗੰෲ

ਉ৕ীੰચ 67(0('6 ೄ੪ಞঐॵআথॢ

Atomic resolution STEM-EDS mapping for light elements

ઽ୷ଓਫ67(0‫ق‬-(0$50)‫ك‬प࿌ൗखञणभপઠྫྷ३জ॥থॻজইॺਫ਼লஓ GXDO6'' ॑৷ः‫ؚ‬ਉ৕ীੰચ67(0('6ঐॵআথॢपेॊਉ৕ঞঋঝଡୗੰෲ॑ষढञ‫؛‬ೄ੪ಞभਉ৕ীੰચঐॵআথॢदम‫ؚ‬ਗ਼৕଍සೝपेॊ૥મॲও‫ش‬४ऋ൸ସ॑༄৲औचॊऒधऋਖ਻धऩॊ‫؛‬মૼ୒दम‫ؚ‬ൠਗ਼૴উট‫ش‬ঈ௒ਪ॑ਉ৕ীੰચदਯ૸ऊैਯਐইঞ‫ش‬঒஋઴घॊঐॵআথॢ১॑৫৅ख‫ؚ‬ೄ੪ಞऊैਛॊ෷৲੟ृᄚ৲੟রभ৸ਉ৕ढ़ছ঒॑௉৥प૭ଳ৲घॊऒधऋ૭ચपऩढञ‫؛‬

Atomic resolution STEM-EDS mapping was performed using anaberration-corrected STEM (JEM-ARM200F, JEOL Ltd.) equippedwith two large diameter silicon drift detectors (dual-SDD). In theelemental mapping of light elements, it was the challenge toprevent the sample damages due to electron beam irradiation. By
applying a mapping method of accumulating weak current probe
scanning frames at atomic resolution, all atomic columns withinoxide or nitride crystals including light element columns can beobtained.

ઽ୷ଓਫ67(0('6भெૄ௕ध$O1౐੥အभਉ৕ীੰચ67(0('6ঐॵউ‫؛‬
A schematic of the aberration-corrected STEM-EDS system and the resultsof atomic resolution STEM-EDS mapping of AlN single crystal.
Reference : A. Kumamoto, et al., AMTC4 (2014).;ിম৥ึ,౎७ছ঑ॵॡ५
‫ؙؙؙؙ‬51, (2016) 404.

CONTACT

Atomic structure analysis of Al alloy/AlN liquid-bonded heterointerface੺ফभৈິಓ‫؞‬ৈਃચਗ਼৕ॹংॖ५पम‫ؚ‬সരध७ছ঑ॵॡ५भ౮ர౫
મྃ੆ம়ૼ୒ऋ৷ःैोथःॊ‫؛‬खऊख‫ਂؚ‬ෞ੟ृ๣ਸ੪ಞ॑அिம়ੀએभ஄ਛওढ़ॽ६঒पঢ়खथमऒोऽद৥ैऊपऔोथःऩऊढञ‫؛‬जऒदমଢ଼஢दम‫੆ؚྃ‬ம়औोञ॔ঝ঑ॽक़঒়সधᄚ৲॔ঝ঑ॽक़
঒भ౮ৼੀએଡୗ॑ਉ৕ীੰચ67(0('6पेढथ૭ଳ৲खञ‫؛‬ऒोपेॉ‫ؚ‬జਟু১दम௙શਂ૭ચऩ๶୤๣ਸ੪ಞभ0Jऋਉ৕঳ಽटऐੀએपုෲखथःॊऒध॑৅ৄख‫ؚ‬0Jਉ৕ಽऋ౮ৼੀએदਃ༊ਘ২॑਱঱घॊ஍ટ॑৥ैऊपखञ‫؛‬ਹ৷঻‫؟‬ਕഇঐॸজ॔ঝઙૄভ঺রఙଢ଼஢ਚ‫ؙ‬హ୾໋୙‫ؚ‬௘৛ਮඥ

Liquid-bonded heterointerfaces between metals and ceramics areused for high-performance electronic devices. However, the formation
mechanism of the bonding interface had not been elucidated so far
because of the presence of impurities and additional elements. In thisstudy, the interface structure of liquid-bonded Al alloy and AlN was
directly observed by the atomic resolution STEM-EDS mapping. We
discovered that a small amount of Mg additive element forms one
atomic layer structure at the interface. This Mg layer was found to be
the origin of the enhanced mechanical strength of the interface.

$O়সध$O1भঊॸটੀએभਉ৕ীੰચ67(0('6ঐॵআথॢ‫؛‬
Atomic resolution STEM-EDS mapping of the heterointerface between Al
alloy and AlN.
Reference: A. Kumamoto, et al., Sci.Rep. 6, (2016) 22936.; ിম৥ึ‫؜౎؜‬঩ম੥အ৾‫ؙؙؙؙؙ‬ভ๟59, (2017) 246.: Y. Kuromitsu, et al., J.Cer.Soc.Jpn. 125, (2017) 165,ിম৥ึ‫ূؙ‬਎প৾প৾੹ੵ৾௺ଢ଼஢ఐ‫؞‬੕়ଢ଼஢ਃଡ