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onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

DATA SHEET
www.onsemi.com

22 V/5.5 A Protection Switch
with OVP/OTP and IDTRCBDFN12 3x3, 0.5P
CASE 506FD

FPF2890
Description

The FPF2890MN features 5.5 A continuous and 15 A surge current
for 10 ms @ 2% power switch for USB type C/PD application, which
offers Over−Voltage Protection (OVP), Over−Temperature−Protection(OTP) and Idea Diode True Reverse Current Block (IDTRCB) to
protect system. It has low On−resistance of typical 33 mW with DFN
package can operate from 3.4 V to 22 V and up to 28 V absolute
maximum.
The FPF2890MN is the ideal solution for multi−port Type−C PD
current sinking application. The Ideal Diode True Reverse Current
Blocking (IDTRCB) feature prevents VIN to rise due to reverse
current flow from VOUT under all conditions. An internal soft−start
circuit controls inrush current due to capacitive loads and the slew rate
can be adjusted using an external capacitor. The integrated
back−to−back MOSFET offer industry’s lowest ON resistance andhighest SOA to safely handle high current and wide range of output
capacitances on VOUT.
The FPF2890MN is available in a thermal enhanced 3 mm x 3 mm
DFN−12 package which can operate over −40°C to +125°C junction
temperature range.

MARKING DIAGRAMXXXXXXXXXXXXAWLYWW

XXXX = Specific Device CodeA
= Assembly Location
WL = Wafer Lot
Y= YearWW = Work Week

ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.

Features• 22 V/5.5 A Capable OTP/OVP/IDTRCB Power Switch• 15 A Peak Current for 10 ms @ 2% Duty Cycle• Input Voltage Range:♦ VIN : 3.4 V~22 V• Ultralow On−resistance♦ Typical 33 mW• Up to 28 V Input/Output Voltage ABS• Active HIGH EN Polarity• Ideal Diode True Reverse Current Blocking (IDTRCB)• Configurable Soft−Start• Thermal Shutdown• Open Drain Fault FTLB Output to Indicate INRUSH, OTP, OVP,IDTRCB Event• Thermally Enhanced DFN 3x3 − 12L Package• IEC 61000−4−5: ±35 V on VIN and VOUT
• IEC 61000−4−2: ±8 kV on VIN and VOUT
Applications• Computing and Laptop© Semiconductor Components Industries, LLC, 2023

August, 2024 − Rev. 5

1

Publication Order Number:
FPF2890/D

FPF2890
Application Diagram

VIO

SystemCharger/
PMIC

Cout

Ccap

VBUS
Cin

EN
BatteryVin

Vout

FPF2890

CAP

GND

FLTB

Type
C
CON

SS
Css

IO
Processor
FAULT
DET

Figure 1. Typical Application
Block Diagram

VIN

VOUT

UV/OV

ChargePump

Control Logic

CAP
FLTB

EN
Soft−Start

ThermalShutdown

FPF2890MN
SS

Figure 2. Typical Applicationwww.onsemi.com
2

GND

FPF2890
Pin Configuration

12

NC

2

11

DNC_VINDNC PMID

3

10

VIN

CAP

4

9

VIN

EN

5

8

FLTB

GND

6

7

SS

VOUT

1

VOUT

EXP

DFN3x3−12L

Figure 3. Pin Configuration (Top View)

PIN DEFINITIONSPin Number

Pin Name

Description

1, 2

VOUT

3

DNC_PMID

4

CAP

Connect a 1 nF capacitor to GND.

5

EN

Enable active high.

6

GND

Ground.

7SSSoft−start pin. Connect a capacitor CSS from SS to GND to set the soft−start time.

8

FLTB

Fault Indicator, open−drain output. Pull low after a fault condition is detected.

9,10

VIN

Connect to adapter or power input. Place a 10 mF capacitor from VIN to GND.

11

DNC_VIN

12NC

No connect

EXP

EXP

Exposed Thermal Pad. It must be electrically isolated. Solder to a metal surface directly underneath the
EXP and connect to floating copper thermal pads on multiple PCB layers through many Vias. For best
thermal performance, make the floating copper pads as large as possible.

Output pins. Connect to internal load.
Do Not Connect.

Internally connected to VIN. If outside connected to VIN, can effectively reduce the Ron. recommend
connecting to VIN.

www.onsemi.com
3

FPF2890
ABSOLUTE MAXIMUM RATINGS
Min

Max

Unit

VIN/CAP

Symbol
VIN, CAP to GND

−0.3

28

V

VOUT

VOUT to GND

−0.3

28

V

EN, FLTB, SS to GND

−0.3

6

V

Continuous VIN to VOUT Current

−

5.5

A

Peak VIN to VOUT Current (10 ms / 2% Duty Cycle)

−

15

A

TSTG

Storage Junction Temperature Range

−65

+150

°C

TJ

Junction Temperature

−

+150

°C

TL

Lead Temperature (Soldering, 10 Seconds)

−

+260

°C

qJC

Thermal Resistance, Junction−to−Case (2S2P.1in. (Note 1) pad of 2 oz. Copper)

−

2.38

°C/W

qJA

Thermal Resistance, Junction−to−Ambient (2S2P.1in. (Note 1) pad of 2 oz. Copper)

−

32.18

°C/W

ESD

Electrostatic Discharge Capability

Human Body Model, ANSI/ESDA/JEDEC JS−001

2

−

kV

Charged Device Model, JESD22−C101

2−

Air Discharge at VIN and VOUT (Note 2)

8−

Contact Discharge at VIN and VOUT (Note 2)

8−

VIN, VOUT

35−

V EN/SS/FLTB
IIN_VOUT

Parameter

IEC61000−4−2 System Level

Surge

IEC61000−4−5

VStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured using 2S2P JEDEC std. PCB.
2. External TVS is required to guarantee.

RECOMMENDED OPERATING CONDITIONS
SymbolVIN

Parameter

Min

Max

Unit

VIN Operating Voltage

3.4

22.0

V

V EN/FLAGBEN, FLTB

0

5.5

V

VCAP

CAP to VIN

0

5.5

V

Vss

SS to Ground

0

3

V

TA

Ambient Operating Temperature

−40

85

°C

TJ

Operating Junction Temperature

−

+125

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

www.onsemi.com
4

FPF2890
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TA= −40 to 85°C; Typical values are at VIN = 20 V, EN = 5 V,
TA = 25°C, CCAP = 1 nF, CIN = 10 mF, COUT = 10 mF, CSS = 5.6 nF)
SymbolParameter

Condition

Min

Typ

Max

Unit

VIN

Input Voltage

Validate device functionality across the
VIN recommended operating range.

3.4

−

22

V

VUVLO

Under−voltage Lockout Threshold

VIN rising

3

−

3.35

V

VUVLO_HYS

Under−voltage Lockout Hysteresis

−

250

−

mV

IVIN_ON

Input Quiescent Current

IOUT = 0 mA, EN = 5 V

−

380

−

mA

IVIN_OFF

VIN Shutdown Current

EN = GND, VIN = 20 V, IOUT = 0 A

−

32

48

mA

IVOUT_OFF

Output Leakage Current

EN = 0, VOUT = 20 V, VIN = 0 V

−

4.5

7.5

mA

RON_20V

On Resistance

VIN = 20 V, IOUT = 1000 mA, EN = 5 V

−

33

−

mW

RON_5VOn Resistance

VIN = 5.0 V, IOUT = 1000 mA, EN = 5 V

−

35

−

mW

V_IH_EN

Input Logic High Voltage

Rising

−

−

1.4

V

V_IL_EN

Input Logic Low Voltage

Falling

0.6

−

−

V

V_OL_FLTB

Output Logic Low Voltage

FLTB sinking 3 mA

−

−

0.3

V

R_EN_LOW

Input Pull−down Resistance

475

730

985

kW

VOVP

Over−voltage Protection Threshold

VIN Increasing

23

24

25

V

tOVP_DEB

Over−voltage Protection Debounce
Time

Latch off. No restart

−

512

−

ms

VIDTRCB

Ideal Diode TRCB Regulation Voltage

VIN − VOUT

−

70

−

mV

VT_RCBTRCB Protection Trip Point

VOUT − VIN

−

50

−

mV

tRCB_DEL

TRCB Delay Time (Note 3)

−

0.5

−

ms

TSD

Thermal Shutdown

Temperature rising. System latch off.

−

140

−

°C

tD_ON

Turn−On Delay Time

From EN rising edge to VOUT reaching
10% of VIN

−

8

−

ms

tON

Turn−On Rise Time

VOUT from 10% to 90% of VIN = 20 V

−

1.9

−

ms

tOFF

Turn−Off Fall Time

From EN falling edge to IOUT = 0 A

−

32

−

ms

tRESET

Current Clamping Timer (Note 3)

−

512

−

ms

tRETRY

Current Clamping Retry Timer (Note 3)

−

8

−

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Guaranteed by characterization and design.

Timing Diagrams
VIN

5V

5V

VOUT
t OFF

GND

t D_ON

tON
HIGH

VEN

LOW

Figure 4. VIN to VOUT Power Up/Down and Normal Operationwww.onsemi.com
5

FPF2890
treset = 512 ms

IOUT
tON

VIN
VOUT

tDON
FLTB VIO

EN

Figure 5. Inrush Current Limit and SCP Operation (Latch−Off)treset = 512 ms

IOUT
tRetry = 8 ms
VIN
VOUT

FLTB

VIO

EN

Figure 6. Inrush Current Limit and SCP Operation (Auto−Retry)

VOVLO
VIN

tOVP_DEB Measure@ OVLO_Rising to
VOUT = 90% VIIN

tON
t DON
VOUT

VEN
VIO
FLTB

Figure 7. OVP Operationwww.onsemi.com
6

tON
t DON

FPF2890
HIGH
GND
VIN
VUVLO

UVLO_HYS

t ON
VOUT
GND
t D_ONUV Event

Figure 8. UVLO Operation

VIN
GND
JUNCTIONTEMPERATURE

OTP
Threshold
t_ON

VOUT
GND
VIO

t OT_DEB

t_DON

FLTB

EN

Figure 9. Thermal Shutdown Operation

Trcb_del

VIN

IOUT

VOUT

0A

= VIN + 50 mV
= VIN

= VIN
t RCB_RELEASE

VIO
FLTB

Internal
FETs

ON

OFF

ON

Figure 10. TRCB Operation (FLTB was configured active)
Operation Description

FPF2890MN is a protection switch with soft−start,over−voltage, and over temperature protections. It iscapable of operating from 3.4 V to 22 V. The internal powerswitch consists of back−to−back connected MOSFET.
When the switch is enabled, the overall resistance between

VIN and VOUT is only 33 mW. The back−to−backconfiguration of MOSFET completely isolates VIN and
VOUT when the switch is turned off, preventing leakage
between the two pins with IDTRCB function integrated.

www.onsemi.com
7

FPF2890
Soft−Start Slew−Rate Control

TA = 25°C, CCAP = 1 nF, CIN = 10 mF, COUT = 10 mF,
CSS = 5.6 nF. Soft−start control process as the below
reference.

VIN(2 V/div)

VIN(2 V/div)VOUT(2 V/div)VOUT(2 V/div)

IIN(5 A/div)

IIN(5 A/div)

EN(5 V/div)

EN(5 V/div)(2 ms/div)(500 ms/div)

Figure 11. VIN = 5 V, ROUT = 0.86 W
VIN(5 V/div)
VOUT(5 V/div)

VIN(5 V/div)

IIN(5 A/div)

VOUT(5 V/div)
IIN(5 A/div)EN(2 V/div)

EN(5 V/div)(2 ms/div)(1 ms/div)

Figure 12. VIN = 20 V, ROUT = 3.4 W= Plimit / (Vin − Vout), there are two power limitation levels
will be applied according to different voltage level of Vout ,when Vout < 1.1 V like Vout was short to ground directly,
power limitation is about 24 W and the current limitation isabout 4.8 A, while vout goes up above 1.1 V, the power
limitation increased to 42 W, the current will not over than 8
A max at any condition, and when the limitation last morethan 512 ms, then FPF2890MN will turn off switch and signal
system by pulling down the FLTB pin (latch off version), and
FLTB will be released and next try will be applied once
system toggle EN pin low and high again or cycling the Vin.
If the inrush protection was finished earlier than 512 ms, thentimer will be reset. Also, an auto−retry mode with 8 ms delay
can be enabled by changing fuse setting as back up. Below
showed is VIN = 10 V, Cout = 1000 mF, EN from low to high,
VOUT from a low voltage more than 1.1 V (The residual
charge on the large capacitor) then start−up process, First
trigger the power limit protection, then trigger current limit

When EN pin is asserted high, the slew rate control applies
voltage on the gate of the power switch in a manner such thatthe output voltage is ramped up linearly until VOUT reaches
VIN voltage level. The output ramps up time (tON) is
programmable by an external soft−start capacitor (CSS).
The following formula provides the estimated 10% to 90%
ramp up time.
t ON +

2

C SS
112.5

V IN

10 3

(eq. 1)

Where Css is nF and tON is ms.
Inrush Current Limit and SCP at Start Up

FPF2890MN has the current limit and short circuit
protection functions at start up period .Once the loading
current pass through FPF2890MN is higher than current
limitation or the power consumption is higher than power
limitation during start up condition , then an current limitation
will be triggered and load current will be regulated to Ilimit

www.onsemi.com
8

FPF2890
protection. But please note both current limit and SCP
shutdown are disable after soft−start time is finished.
Current limit

VOUT(1 V/div)

PlimitVIN(1 V/div offset 10 V)
Power (10 W/div)
FLTB (1 V/div)
IIN(1 A/div)(200 ms/div)

Figure 13. Start−up Protection
SOA Curves

enough to drive a large output capacitance with load inreasonable soft−start time.

Figure 14 illustrates the power switch Safe Operating
Area (SOA) Curves. FPF2890MN power switch is robust

I (A)

100

10

100 ms
160 ms
300 ms
500 ms
2 ms
DC

1
1

10
V (V)

Figure 14. Safe Operating Area (SOA) Curves for Power Switch
Input Under−Voltage Lockout (UVLO)

2. OVP will prevent power switch to be turned on if it
is in off state; In either case FLTB pin is pulled low
to report the fault condition. The device can only bere−enabled by either toggling EN pin or cycling the
input power supply, for OVP response time setting,it is 512 ms in default, can also be removed bydifferent fuse setting.

The internal control circuit is powered from VIN. The
under−voltage lockout (UVLO) circuit monitors the voltage
at the input pin (VIN) and only allows the power switches toturn on when it is higher than 3.35 V (VUVLO).
Over Voltage Lockout (OVLO)

The voltages at VIN pin are constantly monitored once thedevice is enabled. In case the voltage exceeds the OVLO
threshold, over−voltage protection is activated:
1. If the power switch is on, it will be turned off after
OVP debounce time (tOVP_DEB) to isolate VOUT
from VIN;

Ideal Diode and True Reverse Current Blocking(ID−TRCB)

When the device is ON with no load or under light loadconditions, it regulates VOUT to be 70 mV below VIN. As
the load current is increasing or decreasing, the device

www.onsemi.com
9

FPF2890
adjusts the gate drive to maintain the 70 mV drop from VIN
to VOUT. As the load current continues to increase thedevice increases the gate drive until the gate is fully turnedon and VIN to VOUT drop is determined by IR drop throughthe MOSFET. If for any reason VOUT increases such that
VIN to VOUT drop to less than 70 mV, the gate driver forces
the switch to turn off.

The FPF2890MN also features a fast comparator thatturns off the power switch upon detection of VOUT − VIN
is higher than 50 mV (VTRCB) after TRCB delay time
(tTRCB_DEL). When the FPF2890MN is first enabled or
during each auto−restart, power switch will be kept off if
VOUT is 50 mV higher than VIN. The below show is the
TRCB behavior test, VIN and VOUT offset is 16 V, VOUT
increased by difference slew rate.

VOUT(1 V/div)
VIN(1 V/div)
IIN(5 A/div)Flag(2 V/div)VOUT(1 V/div)
VIN(1 V/div)
IIN(5 A/div)Flag(2 V/div)(10 ms/div)(100 ms/div)

Figure 15. TRCB Behavior for Rout = 20 W (FLTB was configured active)
Fault FLTBOpen drain output requiring external bias and pull−up
resistor. 1~2 mA capability is preferred to drive LED or
GPIO port as an indicator if necessary.
Table 1.
FLTB

Description

LOW

Device is in fault condition: Inrush protection, OVP
and Thermal Shutdown or TRCB was triggered (fuseconfigurable, default will not pull down FLTB)

Hi−Z

Device is in normal condition

Thermal Shutdown (OTP)

Protect the device from over temperature, the powerswitch turn OFF and FLTB turn to Low immediately when
the junction temperature exceeds TSD, then if junction
temperature drop to lower than thermal shutdown hysteresis
and toggle EN or cycling VIN then FLTB will release andtake another try to close back switch.

Figure 16. Top Layer Layout

There are two ways to create thermal islands on the inner
layers as showed at below figures. The more layers that havethese electrically isolated thermal heat sink islands the betterthe thermal performance will be. Connect all isolated
thermal island (top, inner layer, and bottom) together withas many VIAs as possible. Please refer to the below figure
inner 2 and 3 layers.

Layout Design Notes

FPF2890MN is a protection switch designed deliver highcurrent. Layout is critical to remove the heat generated bythis current. For the most efficient heat sinking, connect asmuch copper as possible to the exposed pad. The exposed
pad must be electrically isolated. On the top layer expand theexposed pad island as much as possible for optimal thermal
performance. The exposed pad copper plane must be
electrically isolated. See example as the below figure.

www.onsemi.com
10

FPF2890

Figure 17. Inner 2− and 3−layer Layout

On the bottom layer, like the inner layers, create anisolated thermal island. Typically, there is more area
available on the bottom area for a larger thermal pad. The top

and bottom layers have better thermal performance than the
inner layers because they are exposed to the atmosphere. See
example as the below figure.

Figure 18. Bottom Layer Layout

ORDERING INFORMATIONPart Number

SCP Operation

Power Limit(VOUT>1.1V)

Operating Temperature Range

Top Mark

Package TypeShipping†

FPF2890MNTXG−F

Auto−Retry

60W−40°C – +85°C

FPF2890F

DFN12(Pb−Free)Tape & Reel

FPF2890MNTXG−L

Latch−Off

42W−40°C – +85°C

FPF2890L

DFN12(Pb−Free)Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

www.onsemi.com
11MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONSDFN12 3.00x3.00x0.95, 0.50P
CASE 506FD
ISSUE ADATE 23 APRIL 2024

GENERICMARKING DIAGRAM*XXXXXXXXXXXXAWLYWW

DOCUMENT NUMBER:DESCRIPTION:XXXX = Specific Device CodeA
= Assembly Location
WL = Wafer Lot
Y= YearWW = Work Week

98AON42269H*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DFN12 3.00x3.00x0.95, 0.50P

PAGE 1 OF 1

onsemi andare trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2022

www.onsemi.com

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATIONTECHNICAL PUBLICATIONS:Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com

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