DATA SHEET
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3-Level NPC Inverter
ModuleProduct Preview
NXH600N105L7F5S2HG,
NXH600N105L7F5P2HG
The NXH600N105L7F5S2HG/P2HG is a power module in F5BP
package containing an I−type neutral point clamped three−level
inverter. The integrated field stop trench IGBTs and FRDs provide
lower conduction and switching losses, enabling designers to achieve
high efficiency, high power density and superior reliability.

PIM60 112x62 (SOLDER PIN)
CASE 180CY

Features• I−type Neutral Point Clamped Three−level Inverter Module• 1050 V Field Stop 7 IGBTs• Low Inductive Layout• Solder Pins and Press Fit Pins
• Integrated NTC Thermistor• This is a Pb−Free and Halide Free Device

PIM60 112x62 (PRESS FIT PIN)
CASE 180HY

MARKING DIAGRAM

Typical Applications• Energy Storage System• Solar Inverters• Uninterruptable Power Supplies Systems
XXXXX = Device CodeG
= Pb−Free Package
AT= Assembly & Test Site CodeYYWW = Year and Work Week CodePIN CONNECTIONSORDERING INFORMATION

Figure 1. NXH600N105L7F5S2HG/P2HG SchematicThis document contains information on a product under development. onsemi reserves
the right to change or discontinue this product without notice.

© Semiconductor Components Industries, LLC, 2024

September, 2024 − Rev. P1

1

See detailed ordering and shipping information on page 5 ofthis data sheet.

Publication Order Number:
NXH600N105L7F5SP2/D

NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
MODULE CHARACTERISTICS
Symbol

Value

Unit

Operating Temperature under Switching Condition

Parameter

TVJOP−40 to 150°C

Storage Temperature Range

Tstg−40 to 125°C

Isolation Test Voltage, t = 2 sec, 50 Hz (Note 1)

Vis

4800

VRMS

Stray Inductance

Ls CE

15

nH

Terminal Connection Torque (M5, Screw)M

3 to 5Nm

WeightG

245g

Creepage Distance (terminal to heatsink)

17.46

mm

Creepage Distance (terminal to terminal)

6.48

mm

Clearance Distance (terminal to heatsink)

15.62

mm

Clearance Distance (terminal to terminal)

5.05

mm

Comparative Tracking Index

CTI

>600

1. 4800 VACRMS for 2 second duration is equivalent to 4000 VACRMS for 1 minute duration.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

SymbolMax

Unit

Collector−Emitter Voltage

VCES

1050

V

Gate−Emitter Voltage
Positive Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10)

VGE

±20
30

V

Continuous Collector Current @ Tc = 80°C (TJ = 175°C)

IC

429

A

IC(Pulse)

1287

A

Power Dissipation (TJ = 175°C, Tc = 80°C)

Ptot

1080

W

Minimum Operating Junction Temperature

TJMIN

−40

°C

Maximum Operating Junction Temperature

TJMAX

175

°C

Collector−Emitter Voltage

VCES

1050

V

Gate−Emitter Voltage
Positive Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10)

VGE

±20
30

V

Continuous Collector Current @ Tc = 80°C (TJ = 175°C)

IC

433

A

IC(Pulse)

1299

A

Power Dissipation (TJ = 175°C, Tc = 80°C)

Ptot

1080

W

Minimum Operating Junction Temperature

TJMIN

−40

°C

Maximum Operating Junction Temperature

TJMAX

175

°C

VRRM

1050

V

Continuous Forward Current @ Tc = 80°C (TJ = 175°C)

IF

180

A

Repetitive Peak Forward Current (TJ = 175°C) Tpulse = 1 ms

IFRM

540

A

Maximum Power Dissipation @ Tc = 80°C (TJ = 175°C)

Ptot

426

W

Minimum Operating Junction Temperature

TJMIN

−40

°C

Maximum Operating Junction Temperature

TJMAX

175

°C

VRRM

1050

V

IF

196

A

OUTER IGBT (T1, T4)

Pulsed Peak Collector Current @ Tc = 80°C (TJ = 175°C) @ Tpulse = 1 ms

INNER IGBT (T2, T3)

Pulsed Peak Collector Current @ Tc = 80°C (TJ = 175°C) @ Tpulse = 1 ms

NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage

INVERSE DIODES (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Tc = 80°C (TJ = 175°C)

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

SymbolMax

Unit

Repetitive Peak Forward Current (TJ = 175°C) @ Tpulse = 1 ms

IFRM

588

A

Maximum Power Dissipation @ Tc = 80°C (TJ = 175°C)

Ptot

434

W

Minimum Operating Junction Temperature

TJMIN

−40

°C

Maximum Operating Junction Temperature

TJMAX

175

°C

INVERSE DIODES (D1, D2, D3, D4)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter

Test Condition

Symbol

Min

Typ

Max

Unit

VGE = 0 V, VCE = 1050 V

ICES

−

−

500

mA

VGE = 15 V, IC = 600 A, TJ = 25°C

VCE(SAT)

−

1.6

2.3

V

−

2.0

−

OUTER IGBT (T1, T4)
Collector-Emitter Cutoff Current
Collector-Emitter Saturation Voltage

VGE = 15 V, IC = 600 A, TJ = 150°C
Gate-Emitter Threshold Voltage

VGE = VCE, IC = 600 mA

VGE(TH)

4.0

5.5

6.9

V

Gate Leakage Current

VGE = 20 V, VCE = 0 V

IGES

−

−

1

mA

Rg

−

0.58

−

W

−

800

−

A

td(on)

−

230

−

ns

tr

−

46

−

td(off)

−

1582

−

Fall Time

tf

−

16.7

−

Turn-on Switching Loss per Pulse

Eon

−

8810

−

Turn off Switching Loss per Pulse

Eoff

−

8550

−

td(on)

−

206

−

tr

−

50

−

td(off)

−

1702

−

Fall Time

tf

−

15.6

−

Turn-on Switching Loss per Pulse

Eon

−

13390

−

Turn off Switching Loss per Pulse

Eoff

−

10990

−

Cies

−

48843

−

Output Capacitance

Coes

−

1767

−

Reverse Transfer Capacitance

Cres

−

281

−

VCE = 600 V, IC = 57 A, VGE = −15/+20 V

Qg

−

2988

−

nC

Thermal grease,
Thickness = 2 Mil ±2%,
λ = 2.87 W/mK

RthJH

−

0.139

−

°C/W

RthJC

−

0.088

−

°C/W

IF = 300 A, TJ = 25°C

VF

−

2.6

3.4

V

−

2.4

−

Internal Gate Resistor
Turn−off safe operating area
Turn-on Delay Time
Rise Time
Turn-off Delay Time

Turn-on Delay Time
Rise Time
Turn-off Delay Time

Input Capacitance

Total Gate Charge
Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case

VCC < 800 V,
RG,off ≥ 30 W, Tvj < 150°C
TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W,
RG,off = 23 W

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W,
RG,off = 23 W

VCE = 20 V. VGE = 0 V. f = 100 kHz

mJ

ns

mJ

pF

NEUTRAL POINT DIODE (D5, D6)
Diode Forward Voltage

IF = 300 A, TJ = 150°C

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter

Test Condition

Symbol

Min

Typ

Max

Unit

TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W

trr

−

93

−

ns

Qrr

−

6321

−

nC

Peak Reverse Recovery Current

IRRM

−

161

−

A

Peak Rate of Fall of Recovery Current

di/dt

−

3.56

−

A/ms

Err

−

1724

−

mJ

trr

−

169

−

ns

Qrr

−

17552

−

nC

Peak Reverse Recovery Current

IRRM

−

245

−

A

Peak Rate of Fall of Recovery Current

di/dt

−

3.32

−

A/ms

Reverse Recovery Energy

Err

−

7229

−

mJ

RthJH

−

0.327

−

°C/W

RthJC

−

0.223

−

°C/W

VGE = 0 V, VCE = 1050 V

ICES

−

−

500

mA

VGE = 15 V, IC = 600 A, TJ = 25°C

VCE(sat)

−

1.6

2.3

V

−

2.0

−

NEUTRAL POINT DIODE (D5, D6)
Reverse Recovery Time
Reverse Recovery Charge

Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge

Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W

Thermal grease,
Thickness = 2 Mil ±2%,
λ = 2.87 W/mK

INNER IGBT (T2, T3)
Collector-Emitter Cutoff Current
Collector-Emitter Saturation Voltage

VGE = 15 V, IC = 600 A, TJ = 150°C
Gate-Emitter Threshold Voltage

VGE = VCE, IC = 600 mA

VGE(TH)

4.0

5.5

6.9

V

Gate Leakage Current

VGE = 20 V, VCE = 0 V

IGES

−

0.02

1

mA

Rg

−

0.58

−

W

−

800

−

A

td(on)

−

233

−

ns

tr

−

57

−

td(off)

−

2200

−

Fall Time

tf

−

17.9

−

Turn-on Switching Loss per Pulse

Eon

−

8640

−

Turn off Switching Loss per Pulse

Eoff

−

11800

−

td(on)

−

210

−

tr

−

62

−

td(off)

−

2350

−

Fall Time

tf

−

18.1

−

Turn-on Switching Loss per Pulse

Eon

−

12510

−

Turn off Switching Loss per Pulse

Eoff

−

14500

−

Cies

−

47927

−

Output Capacitance

Coes

−

1871

−

Reverse Transfer Capacitance

Cres

−

304

−

VCE = 600 V, IC = 57 A, VGE = −15/+20 V

Qg

−

2940

−

nC

Thermal grease,
Thickness = 2 Mil ±2%,
λ = 2.87 W/mK

RthJH

−

0.139

−

°C/W

RthJC

−

0.088

−

°C/W

Internal Gate Resistor
Turn−off safe operating area
Turn-on Delay Time
Rise Time
Turn-off Delay Time

Turn-on Delay Time
Rise Time
Turn-off Delay Time

Input Capacitance

Total Gate Charge
Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case

VCC < 800 V,
RG,off ≥ 35 W, Tvj < 150°C
TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W,
RG,off = 31 W

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W,
RG,off = 31 W

VCE = 20 V. VGE = 0 V. f = 100 kHz

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4

mJ

ns

mJ

pF

NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter

Test Condition

Symbol

Min

Typ

Max

Unit

IF = 300 A, TJ = 25°C

VF

−

2.5

3.4

V

−

2.3

−

trr

−

89

−

ns

Qrr

−

5580

−

nC

Peak Reverse Recovery Current

IRRM

−

135

−

A

Peak Rate of Fall of Recovery Current

di/dt

−

2.81

−

A/ms

Reverse Recovery Energy

Err

−

1664

−

mJ

trr

−

182

−

ns

Qrr

−

16903

−

nC

Peak Reverse Recovery Current

IRRM

−

201

−

A

Peak Rate of Fall of Recovery Current

di/dt

−

2.62

−

A/ms

Reverse Recovery Energy

Err

−

6485

−

mJ

Thermal grease,
Thickness = 2 Mil ±2%,
λ = 2.87 W/mK

RthJH

−

0.277

−

°C/W

RthJC

−

0.219

−

°C/W

Nominal ResistanceT = 25°C

R25

−

5

−

kW

Nominal ResistanceT = 100°C

R100

−

492.2

−

W

Deviation of R25

R/R

−1

−

1

%

Power Dissipation

PD

−

5

−

mW

−

1.3

−

mW/K

−

3430

−

K

INVERSE DIODES (D1, D2, D3, D4)
Diode Forward Voltage

IF = 300 A, TJ = 150°C
TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W

Reverse Recovery Time
Reverse Recovery Charge

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W

Reverse Recovery Time
Reverse Recovery Charge

Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case
THERMISTOR CHARACTERISTICS

Power Dissipation ConstantB(25/85), tolerance ±1%

B-value

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION
DeviceMarking

Package

Shipping

NXH600N105L7F5S2HG

NXH600N105L7F5S2HG

F5 − PIM60 112x62 (SOLDER PIN)
(Pb−Free and Halide−Free)

8 Units / Blister Tray

NXH600N105L7F5P2HG

NXH600N105L7F5P2HG

F5 − PIM60 112x62 (PRESS FIT PIN)
(Pb−Free and Halide−Free)

8 Units / Blister Tray

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – IGBT T1/T4 AND D5/D6 DIODE

Figure 2. Typical Output Characteristics− IGBT

Figure 3. Typical Output Characteristics −IGBT

Figure 4. Transfer Characteristics −IGBT

Figure 5. Saturation Voltage Characteristic− IGBT

Figure 6. FBSOA

Figure 7. RBSOA

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – IGBT T1/T4 AND D5/D6 DIODE

Figure 8. Gate Voltage vs. Gate Charge

Figure 9. Capacitance

Figure 10. Temperature vs. NTC Value

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – IGBT T2/T3 AND D3/D4, D1/D2 DIODE

Figure 11. Typical Output Characteristics

Figure 12. Typical Output Characteristics

Figure 13. Transfer Characteristics −IGBT

Figure 14. Saturation Voltage
Characteristic − IGBT

Figure 15. FBSOA

Figure 16. RBSOA

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – IGBT T2/T3 AND D3/D4, D1/D2 DIODE

Figure 17. Gate Voltage vs. Gate Charge

Figure 18. Capacitance

Figure 19. Transient Thermal Impedance (IGBT Zthjc)

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – D1/D2/D3/D4 (INVERSE DIODE)

Figure 20. Inverse Diode Forward Characteristics

Figure 21. Transient Thermal Impedance (Inverse Diode Zthjc)

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – D5, D6 (NEUTRAL POINT DIODE)

Figure 22. Neutral Point Diode Forward Characteristics

Figure 23. Transient Thermal Impedance (Neutral Point Diode Zthjc)

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – T1 || D5 OR T4 || D6

Figure 24. Typical Turn On Loss vs. Ic

Figure 25. Typical Turn Off Loss vs. Ic

Figure 26. Typical Turn On Loss vs. RG

Figure 27. Typical Turn Off Loss vs. RG

Figure 28. Typical Turn−Off Switching
Time vs. Ic

Figure 29. Typical Turn−On Switching Timevs. Icwww.onsemi.com
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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – T1 || D5 OR T4 || D6

Figure 30. Typical Turn−Off Switching
Time vs. RG

Figure 31. Typical Turn−On Switching Timevs. RG

Figure 32. Typical Reverse Recovery
Energy Loss vs. Ic

Figure 33. Typical Reverse Recovery
Energy Loss vs. RG

Figure 34. Typical Reverse Recovery
Time vs. Ic

Figure 35. Typical Reverse Recovery
Charge vs. Ic

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – T1 || D5 OR T4 || D6

Figure 36. Typical Reverse Recovery
Current vs. Ic

Figure 37. Typical di/dt vs. Ic

Figure 38. Typical Reverse Recovery
Time vs. RG

Figure 39. Typical Reverse Recovery
Charge vs. RG

Figure 40. Typical Reverse Recovery
Peak Current vs. RG

Figure 41. Typical di/dt vs. RG

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – T2 || D3 + D4 OR T3 || D1 + D2

Figure 42. Typical Turn On Loss vs. Ic

Figure 43. Typical Turn Off Loss vs. Ic

Figure 44. Typical Turn On Loss vs. RG

Figure 45. Typical Turn Off Loss vs. RG

Figure 46. Typical Turn−Off Switching
Time vs. Ic

Figure 47. Typical Turn−On Switching Timevs. Icwww.onsemi.com
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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – T2 || D3 + D4 OR T3 || D1 + D2

Figure 48. Typical Turn−Off Switching
Time vs. RG

Figure 49. Typical Turn−On Switching Timevs. RG

Figure 50. Typical Reverse Recovery
Energy Loss vs. Ic

Figure 51. Typical Reverse Recovery
Energy Loss vs. RG

Figure 52. Typical Reverse Recovery
Time vs. Ic

Figure 53. Typical Reverse Recovery
Charge vs. Ic

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
TYPICAL CHARACTERISTICS – T2 || D3 + D4 OR T3 || D1 + D2

Figure 54. Typical Reverse Recovery
Current vs. Ic

Figure 55. Typical di/dt vs. Ic

Figure 56. Typical Reverse Recovery
Time vs. RG

Figure 57. Typical Reverse Recovery
Charge vs. RG

Figure 58. Typical Reverse Recovery
Peak Current vs. RG

Figure 59. Typical di/dt vs. RG

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NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
PACKAGE DIMENSIONSPIM60 112.00x62.00x12.00
CASE 180CY
ISSUE O

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DATE 30 JUL 2024

NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
PACKAGE DIMENSIONSPIM60 112.00x62.00x12.00
CASE 180CY
ISSUE OGENERICMARKING DIAGRAM*XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKINGXXXXX = Specific Device CodeAT
= Assembly & Test Site CodeYYWW = Year and Work Week Code*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ G”, may or may not be present. Some products
may not follow the Generic Marking.

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DATE 30 JUL 2024

NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
PACKAGE DIMENSIONSPIM60 112.00x62.00x12.00
CASE 180HY
ISSUE O

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DATE 30 JUL 2024

NXH600N105L7F5S2HG, NXH600N105L7F5P2HG
PACKAGE DIMENSIONSPIM60 112.00x62.00x12.00
CASE 180HY
ISSUE OGENERICMARKING DIAGRAM*XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKINGXXXXX = Specific Device CodeAT
= Assembly & Test Site CodeYYWW = Year and Work Week Code*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ G”, may or may not be present. Some products
may not follow the Generic Marking.

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DATE 30 JUL 2024

NXH600N105L7F5S2HG, NXH600N105L7F5P2HG

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
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