Welcome Message from Chairs
The General and TPC Chairs cordially welcome you to the 2021 IEEE Electron Devices Technology and
Manufacturing (EDTM) Conference, to be held in Chengdu, China, during April 8-11, 2021. Sponsored by IEEE
Electron Devices Society (EDS), EDTM is a premier conference providing a unique forum for discussions on abroad range of device/manufacturing-related topics. EDTM rotates among the hot-hubs of semiconductor
manufacturing in Asia. The 5th EDTM is coming to China in 2021 for the first time.
Come to EDTM2021 to learn from renowned researchers and engineers from around the globe through a richlist of technical sessions, interactive sessions, tutorials and short courses, and industrial exhibits. Share yourknowledge and latest results with peers, and enjoy networking by meeting old friends and making new friends.
Return invigorated with new ideas and enthusiasm to make new impacts.
EDTM2021 highlights:
Keynotes:
EDTM2021 features plenary keynotes from globally recognized scholars and researchers from both theacademia and the industry, including Dr. Haijun Zhao, co-CEO of Semiconductor Manufacturing International
Corporation (SMIC), talking about alternative foundry innovation strategies; Professor Xiang Zhang, Presidentof University of Hong Kong, describing photonics enabling future hi-resolution cameras ; Teruo Hirayama,
Executive Chief Engineer of Sony Corporation, reviewing technical innovations for image sensors; Professor
Arokia Nathan from University of Cambridge, discussing about thin-film transistors for advanced analog signal
processing; Prof. Ru Huang, Vice President of Peking University, offering a review on advances in ferroelectricbased devices; and Dr. Jeff Xu, Director of HiSilicon Research, looking into future semiconductor technology
driven by ubiquitous computing.
Banquet Speech:
As the EDTM tradition, EDTM2021 will be have a Banquet during the Closing ceremony. The featured Plenary
Speech will be given by Professor Ilesanmi Adesida. Being Provost of Nazabaryev University, Kazakhstan, andformer Provost and Vice Chancellor of University of Illinois, Urbana-Champaign (UIUC), USA, Dr. Adesida will
share his experiences in developing and administrating large research universities in developed and developing
countries.
Tutorials and Short Courses:
There are two parallel tutorial tracks and four concurrent short course sessions on April 8 to kick-off EDTM2021.
Total twelve lectures will be given by renowned experts include leading scholars, such as Professor Zhenan Baoof Stanford University, Professor Kang L. Wang of UCLA and Professor Philip Wong of Stanford University, tohighlight a few.
Heterogeneous Integration Roadmap Workshop:
Heterogeneous integration (HI) is a promising avenue to future micro/nano-electronics at the system level andis expected to play an important role in the future scaling of electroncis. Come to this heterogeneous integration1

roadmap (HIR) workshop to hear from the experts’ opinions on the challenges and opportunities of the pursuitof next generation microelectronics technologies and system products.
Technical Sessions and Invited Talks:
The technical sessions include about 200 contributed papers accepted upon rigorous peer reviews, which will
be presented in 36 technical oral sessions and one interactive session. In addition to the contributed papers,
EDTM2021 also features an exciting list of about 90 invited talks by renowned scholars, researchers andengineers from around the world. For a better experience, the Interactive (poster) sessions will be integrated
with the industrial exhibitions.
Beyond EDTM Technical Sessions:
As usual, EDTM2021 will hold the signature Reception in the evening of April 9. In addition, a special “Business& Exhibition Night” cocktail reception will be held in the evening of April 10. These two reception events offer
relaxed settings for EDTM2021 attendees to network and meet friends and colleagues.
The IEEE Chapters and Women-in-Engineering (CWiE) Summit, will be held during EDTM2021, which will
provide a forum for local IEEE volunteers and women students and professionals to meet together and share
their experiences and ideas on education, research and career activities in area of microelectronics, and offer
valuable mentorship opportunities.
To facilitate the desires of students and young engineers to develop successful professional careers inmicroelectronics, a Young Engineers’ Networking event will be held on April 8, right after the Short Courses.
This unique event will offer a relaxed forum for Young people to meet with famous “old” guys to chat on careerplanning and opportunities, and to get professional advices from the well-established experts.
What does Chengdu offer?
Chengdu is trendy, artistic, scenic and tech-savvy. It offers endless attractions and opportunities for visitors
including cute grand pandas, hot Sichuan food, laid-back tea houses, brain-burning Mahjong games, snowcapped mountains and rapid waters, and ancient ruins and modern high rises, as well as classical temples.
On behalf of EDTM2021, we would like to extend to all of you a warm welcome to participate in the 2021 IEEE
EDTM Conference. We look forward to seeing you in Chengdu or virtually during April 8-11, 2021!

Albert Wang

Tianchun Ye

Huaqiang Wu

Subramanian Iyer

General Chair

General Co-Chair

TPC Chair

TPC Co-Chair

UC Riverside

IME-CAS

Tsinghua University

UCLA

2

EDTM 2021 Agenda
SessionTime
09:0012:30
12:3013:50
13:5017:20
17:3019:30

Day1 April 8th
Tutorials &Short Courses
Room A (ShuFeng
Room B (ShuShan
Room C (ShuYun
Room D (ShuJin
Hall)
Hall)
Hall)
Hall)
Tutorial 1
Tutorial 2
HIR Workshop
TTUA1
TTUA2
WTUA4
Lunch Break
Short Course 1
STUP1

Short Course 2
STUP2

SessionTime

Activity

Opening Ceremony(Award Presentations & IEEE Fellow Recognition)
Plenary 1: Dr. Haijun Zhao, SMIC, China
Plenary 2: Prof. Xiang Zhang, University of Hong Kong, China
Plenary 3: Teruo Hirayama, Sony Corp., Japan
Room A (ShuFengHall)

18:3020:30

April 9thMain Room (TianFu Ballroom）

9:00-9:30

12:0013:30
13:3015:10
15:1015:30
15:3017:10

Short Course 4
STUP4

Registration
3rd floor
Convention
centerYoung Engineers’ Networking Event (ShuJin Hall)

Day2

9:30-10:15
10:1511:00
11:0011:45

Short Course 3
STUP3

Activity

Room B (ShuShan
Hall)

Room C (ShuYun
Hall)

Room D (ShuJin
Hall)

Registration
3rd floor
Convention
centerLunch BreakSession 1
WE1P1

Session 2
WE1P2

Session 3
WE1P3

Session 4
WE1P4

Authors Interview/Coffee BreakSession 5
WE2P1

Session 6
WE2P2

Session 7
WE2P3

Welcome Reception, jointly with Poster I/Exhibition

3

Session 8
WE2P4

Poster &Exhibition
Setting
Exhibition
Poster I(WTHPE)&Exhibition

EDTM 2021 Agenda
Day3
SessionTime
9:00-9:45
9:45-10:30
10:3011:15
11:1511:30

11:3012:30
12:3013:50
13:5015:30
15:3015:50
15:5017:30
18:3020:30

SessionTime
9:00-10:40
10:4011:00
11:0012:40
12:4014:00
14:0015:40
15:4016:00
16:0017:40
18:3021:00

April 10th

Main Room (TianFu Ballroom)

Activity

Plenary 4: Prof. Arokia Nathan, University of Cambridge, UK
Plenary 5: Prof. Ru Huang, Peking University, China
Registration
3rd floor
Convention
centerPlenary 6: Dr. Jeff Xu, HiSilicon Research, China
Coffee BreakRoom A (ShuFeng
Hall)
Session 9
TH1A1

Room B (ShuShan
Hall)
Session 10
TH1A2

Room C (ShuYun
Hall)
Session 11
TH1A3

Room D (ShuJin
Hall)
Session 12
TH1A4

Lunch BreakSession 13
TH2P1

Session 14
TH2P2

Session 15
TH2P3

Session 16
TH2P4

Exhibition
SessionAuthors Interview/Coffee BreakSession 17
TH3P1

Session 18
TH3P2

Session 19
TH3P3

Session 20
TH3P4

Business & Exhibition Night, jointly with Poster II/Exhibition

Room A (ShuFeng
Hall)
Session 21
FR1A1

Day4 April 11th
Room B (ShuShan
Room C (ShuYun
Hall)
Hall)
Session 22
Session 23
FR1A2
FR1A3

Room D (ShuJin
Hall)
Session 24
FR1A4

Poster II(WTHPE)

Activity

Author Interview/Coffee BreakSession 25
FR2A1

Session 26
FR2A2

Session 27
FR2A3

Session 28
FR2A4

Session 31
FR3P3

Session 32
FR3P4

Lunch BreakSession 29
FR3P1

Session 30
FR3P2

Authors Interview/Coffee BreakSession 33
FR4P1

Session 34
Session 35
FR4P2
FR4P3
Closing Banquet (Award Presentations)
Plenary Speaker: Professor Ilesanmi Adesida
Nazabaryev University, Kazakhstan & UIUC, USA4

Session 36
FR4P4

Registration
3rd floor
Convention
centerTable of contents
WELCOME MESSAGE FROM CHAIRS.............................................................................. 1
EDTM 2021 AGENDA ..................................................................................................... 3
STEERING COMMITTEE.................................................................................................. 6
EXECUTIVE COMMITTEE ................................................................................................ 7
TECHNICAL PROGRAM COMMITTEE .............................................................................. 9
SPONSORS .................................................................................................................. 17
BEST PAPER AWARD FINALISTS ................................................................................... 18
BEST STUDENT PAPER AWARD FINALISTS ................................................................... 20
BEST INTERACTIVE PAPER AWARD FINALISTS ............................................................. 23
KEYNOTE TALKS .......................................................................................................... 25
TUTORIALS .................................................................................................................. 35
HETEROGENEOUS INTEGRATION ROADMAP (HIR) WORKSHOP .................................. 48
SHORT COURSES ......................................................................................................... 51
TECHNICAL SESSIONS .................................................................................................. 72
FRIDAY, APRIL 9, 2021................................................................................................. 72
SATURDAY, APRIL 10, 2021 .......................................................................................... 80
SUNDAY, APRIL 11, 2021 ............................................................................................. 92
INTERACTIVE FORUM ................................................................................................... 108
SPECIAL EVENTS ........................................................................................................ 124
REGISTRATION ............................................................................................................ 125
VISA INFORMATION ..................................................................................................... 128
SPEAKERS’ INSTRUCTIONS ............................................................................................ 129
CONFERENCE VENUE MAP ............................................................................................ 132
LOCAL TRANSPORTATION INFORMATION ....................................................................... 133
TOURIST SITES ............................................................................................................. 135

5

Steering Committee
Kazunari Ishimaru (Chair)

Kioxia Corporation, JapanRu Huang (Co-Chair)

Peking University, China

Fernando Guarin

Globalfoundries, USA

Samar Saha

Prospicient Devices, USA

Ravi Todi

Western Digital, USA

Albert Wang

University of California, Riverside, USA

Tianchun Ye

Institute of Microelectronics, Chinese Academy of Science, China

Huaqiang Wu

Tsinghua University, China

Bin Zhao

EBI, Hong Kong SAR, China,

Tsu-Jae King Liu

University of California, Berkeley, USA

Xuecheng Zou

Huazhong University of Science and Technology, China

Ming Liu

Institute of Microelectronics, Chinese Academy of Science, China

Bo Zhang

University of Electronic Science and Technology of China, China

6

Executive Committee
General Chair

Albert Wang

University of California, Riverside

General Co-Chair

Tianchun Ye

IME-CASTPC Chair

Huaqiang Wu

Tsinghua University

TPC Co-Chair

Subramanian Iyer

University of California, Los Angeles

International Advisory Committee Chair

Tsu-Jae King Liu

University of California, Berkeley

International Advisory Committee Co-Chair

Bin Zhao

EBI

Publications Chair

Jianshi Tang

Tsinghua University

Publications Co-Chair

HitoshiWakabayashi

Tokyo Institute of Technology

Publications Co-Chair

Yi Li

Huazhong University of Science and Technology

Education/Short-Course Chair

Tianling Ren

Tsinghua University

Education/Short-Course Co-Chair

Qiming Shao

Hong Kong University of Science and Technology

Education/Short-Course Co-Chair

Navakanta Bhat

India Institute of Technology, Bangalore

Education/Short-Course Co-Chair

Yimao Cai

Peking University

Publicity Chair

Peng Zhou

Fudan University

Publicity Co-Chair

Mario Lanza

King Abdullah University of Science and Technology

Publicity Co-Chair

Srabanti
Chowdhury

Stanford University

Financial Committee Chair

Bin Zhao

EBI

Financial Committee Co-Chair

Bin GaoTsinghua University

Sponsorship & Exhibition Chair

He QianTsinghua University

Sponsorship & Exhibition Co-Chair

Xuecheng Zou

Huazhong University of Science and Technology

Sponsorship & Exhibition Co-Chair

Bill Nehrer

Applied Materials

Sponsorship & Exhibition Co-Chair

Aabid Husain

Atomera, Inc.

Emerging Technologies Committee Chair

Shuji Ikeda

Tei-Solutions

Emerging Technologies Committee Co-ChairJohn Dallesasse

University of Illinois, Urbana-Champaign

Emerging Technologies Committee Co-Chair

Qi LiuFudan University

Emerging Technologies Committee Co-Chair

He Tang

University of Electronic Science and Technology of
China

Emerging Technologies Committee Co-Chair

Patrick Fay

University of Notre Dame7

Conference Planning/Local Arrangement Chair

He Tang

University of Electronic Science and Technology of
China

Conference Planning/Local Arrangement Co-Chair

Wanli Zhang

University of Electronic Science and Technology of
China

Industrial Advisory Committee Chair

Meikei Ieong

UMEC(HK) Ltd.

Industrial Advisory Committee Co-Chair

Anthony Yen

ASML

Industrial Advisory Committee Co-Chair

Judy Xilin An

Beijing Institute of Carbon-Based IC

Industrial Advisory Committee Co-Chair

Masumi Saitoh

KioxiaNorth American Arrangement Committee Chair

Jesus A del Alamo

MIT

North American Arrangement Committee Co-Chair

Murty Polavarapu

BAE Systems

European Arrangement Committee Chair

Merlyne de Souza

University of Sheffield

European Arrangement Committee Co-Chair

Benjamin Iniguez

University Rovira i Virgili

Region 9 Arrangement Committee Chair

Jacobus Swart

University of Campinas

Region 9 Arrangement Committee Co-Chair

Edmundo A.
Gutierrez-D

INAOE, Mexico

8

Technical Program Committee
TPC Chair

Huaqiang Wu

Tsinghua University

TPC Co- Chair

Subramanian Iyer

University of California, Los Angeles

Materials Committee
Chair

Genquan Han

Xidian University

Co-ChairDaniel Herr

University of North Carolina, Greensboro

Co-Chair

Xiaodong Pi

Zhejiang University

Members

Saptarshi Das

Pennsylvania State University

Pei-Wen Li

National Chiao Tung University

Kazuhito Matsukawa

SUMCO

Yang Xu

Zhejiang University

Muhammad Mustafa Hussain

KAUST

Ni Zhong

East China Normal University

Hongliang Lu

Fudan University

Jiuren Zhou

National University of Singapore

Hong Dong

Nankai University

Yu Zhang

Jilin University

Minoru Fujii

Kobe University

Heejun Yang

Sungkyunkwan University

Peter Littlewood

University of Chicago

Process and Tools for Manufacturing Committee
Chair

Bich-Yen Nguyen

SoitechCo-ChairMing Li

Peking University

Members

Anupam Mitra

Kioxia Corp.

Keiichi Nakazawa

Sony Semiconductor

Wenjun Li

GlobalFoundries

Chin-Lai Chen

Advanced Micro Foundry

Cuiqin Xu

Huali

Anne Vandooren

IMEC

9

Shawn Thomas

AMAT

Walter Schwarzenbach

SoitecYoshiki Yamamoto

RenasasMichael Givens

ASM

Jin Kang

SMIC

Jianjun Zhang

Institute of Physics, CAS

Seongjae Cho

Gachon University

Weiping Bai

CXMTHuimei Zhou

IBM

Marie Mochizuki

Lapis Semiconductor

Semiconductor Devices Committee
Chair

Toshiro Hiramoto

University of Tokyo

Co-Chair

Jiezhi Chen

Shandong University

Members

Lieyong Yang

SMIC

Naoto Horiguchi

IMEC

Gong Xiao

National University of Singapore

Yogesh Singh Chauhan

Indian Institute of Technology, Kanpur

Hyungcheol ShinSeoul National Univ.

Yi Yang

Tsinghua University

Chen Jiang

University of Cambridge

Christofer Hierold

ETH ZuricRoger Booth

Qualcomm

Ran Cheng

Zhejiang University

Zhigang Ji

Shanghai Jiao Tong University

Jing Liu

Institurte of Microelectronics, CAS

Nanbo Gong

IBM T. J. Watson Research Center

Kimihiko Kato

AIST

Yuichiro Mitani

Tokyo City University

Deyuan Xiao

Guangdong Haixin Integrated Circuit Ltd

10Power and Energy Devices Committee
Chair

Shibing Long

University of Science and Technology of China

Co-Chair

Kejun Xia

NXP

Co-Chair

Wanjun Chen

University of Electronic Science and Technology of China

Members

Moufu Kong

University of Electronic Science and Technology of China

Wai Tung Ng

University of Toronto

Srabanti Chowdhury

Stanford University

Uttam SingisettiState University of New York at Buffalo

David Sheridan

Alpha and Omega Semiconductor

Can Bayram

University of Illinois Urbana-Champaign

Rongming Chu

Pennsylvania State University

Yu CaoQORVO

Jae-Hyung Jang

GIST

Weifeng Sun

Southeast University, China

Carol Zhan

On Semiconductor, US

Ray Hueting

University of Twente

Huiqing Wen

Xi'an Jiaotong-Liverpool University

Tetsuya Suemitsu

Tohoku University

Modeling and Simulation Committee
Chair

Bin GaoTsinghua University

Co-ChairPaul Zhou

ADI

Members

Dondee Navarro

Hiroshima University

Darsen Lu

National Cheng Kung University

Chika Tanaka

Kioxia Corporation

Paul Lining Zhang

Peking University

Benjamin Iniguez

Universitat Rovira, Virgili

Victor Moroz

Synopsys

Slobodan Mijalkovic

SilvacoElena Gnani

University of Bologna

RISHO KOH

Renesas11

Mansun Chan

Hong Kong University of Science and Technology

Te-Kuang Chiang

National University of Kaohsiung

Xingsheng Wang

Huazhong University of Science and Technology

Lang Zeng

Beihang University

Rongmei Chen

IMEC

Peng Huang

Peking University

Przemyslaw Gromala

Robert Bosch GmbH

D.NIRMAL

Karunya Institute of Technology and sciences

Reliability Committee
Chair

Runsheng Wang

Peking University

Co-ChairDurgamadhab Misra

New Jersey Institute of Technology

Members

Mahadeva Iyer Natarajan

AllegromicroRakesh Ranjan

Samsung

Ang Diing Shenp

NTU Singapore

Byoung Min

Globalfoundries

Sriram Kalpat

Qualcomm

Zhong Chen

University of Arkansas

Yuan Zhang

Amazon 126 Lab

Tam Lyn Tan

Globalfoundries Singapore

Jifa Hao

On Semiconductor

Zakariae ChbiliIntelYuhao Zhang

Virginia Tech

Osama Awadelkarim

Pennsylvania State University

Chris Changze Liu

Hisilicon

Xing Wu

East China Normal University

Xiangwei Jiang

Institute of Semiconductors, CAS

Ephraim Suhir

University of Portland/University of Vienna

Packaging and Heterogeneous Integration Committee
Chair

Jian Cai

Tsinghua University

Co-chair

Xuejun Fan

Lamar University

12Members

Jie XueCISCOJin Kim

GoogleNaoki Oka

Applied Materials Japan, Inc

Sarah Ying Zhong

University of South Florida

Chih-Hang Tung

TSMC

Yifan GuoASE

Ke Xiao

NCAP

Wei Keat Loh

Intel Malaysia

Xiaowu Zhang

IME Singapore

Tanja Braun

Fraunhofer IZM

Yield and Manufacturing Committee
Chair

Weihai Bu

STIC

Co-ChairBill Nehrer

Applied Materials

Members

Tomasz Brozek

PDF Solutions

Keizo Hiraga

Sony

Rebecca Mih

Apple Inc.

Angelo Pinto

Qualcomm

Enjing Cai

HLMC

Fei Wang

Yangtze Memory (YMTC)

Yibo Lin

Peking University

Zuochang Ye

Tsinghua University

Yajuan Su

IME CAS

Sean Yang

Semitronix

Memories Committee
Chair

Hangbing Lv

IMECAS

Co-ChairShimeng Yu

Georgia Institute of Technology

Members

Yantao Ma

Micron Technology

Jianshi Tang

Tsinghua University

Qiangfei Xia

University of Massachusetts at Amherst

Hugh Barnaby

Arizona State University

13Kai Ni

Rochester Institute of Technology

Wilman Tsai

Stanford University

Yangying Chen

Western Digital

Tuo-Hung Huo

National Chiao Tung University

Weisheng Zhao

Beihang University

Min Hyuk Park

Pusan National University

Bing Chen

Zhejiang University

Elisa Vianello

CEA-LETI

Reika Ichihara

KioxiaSensor, MENS, Bio-Electronics Committee
Chair

Xinxin Li

SIMIT CAS

Co-Chair

Evelyn N Wang

Massachusetts Institute of Technology

Co-ChairJiahao Zhao

Tsinghua University

Members

Chen Yang

ADI

Zhenhua Tian

Mississippi State University

Hung Cao

University of California, Irvine

Sumant SoodApple

Wei Wang

Peking University

Hongyu Yu

Hong Kong University of Science and Technology

Dong-Weon Lee

Chonnam National University

Bikram Bhatia

University of Louisville

Yangying Zhu

University of California, Santa Barbara

Dan Preston

Rice University

Jingjing Zhao

Stanford University

Bo Ma

Stanford University

Jun Chen

Universeity of California, Los Angeles

Photonics, Imaging and Display Committee
Chair

Guozhen Shen

Institute of Semiconductors, CAS

Co-ChairMona Jarrahi

University of California, Los Angeles

Members

John Dallesasse

University of Illinois Urbana-Champaign

14Charles Surya

Nazarbayev University

Gang Li

Hong Kong Polytechnic University

Kasturi Saha

Indian Institute of Technology, Bombay

Kai Wang

Sun Yat-Sen University

Hang Zhou

Peking University

Shamsul Arafin

Ohio State University

Zhiyong Fan

Hong Kong University of Science and Technology

Chuan Wang

Washington University in St Louis,

Qihua Xiong

Nanyang Technological University,

Euan Mcleod

University of Arizona

Shang-Hua Yang

National Tsing Hua University,

Hong Lu

Nanjing University

Flexible and Wearable Electronics Committee
Chair

Xiaojun Guo

Shanghai Jiao Tong University

Co-ChairSheng Xu

University of California, San Diego

Members

In Hee Lee

University of Pittsburg

Luisa PettiFree University of Bozen-Bolzano

Feng Yan

Poly University, Hong Kong

Sean M Garner

Corning

Jie Zhang

Jiangnan University

Di Geng

Institute of Microelectronics, CAS

Sungjune Jung

POSTECH

Luyao Lu

George Washington

Wentao XU

Nankai University

Ting Zhang

SINANO, CAS

Caofeng Pan

Beijing Institute of Nanoenergy and Nanosystems, CAS

Nanotechnologies Committee
Chair

Xinran Wang

Nanjing University

Co-ChairStephen Goodnick

Arizona State University

Members

Yanqing Wu

Peking University

15

Yuanyuan Shi

IMEC

Mario Lanza

King Abdullah University of Science and Technology

Qing Tu

Texas A&M University

Gengchiau Liang

National University of Singapore

Jianbin Xu

Chinese University of Hong Kong

Deji Akinwande

University of Texas, Austin

Fengqiu (Frank) Wang

Nanjing University

Jingbi You

Institute of Semiconductors, CAS

Wolfgang Porod

University of Notre Dame

Trevor Thornton

Arizona State University

Yonhua Tseng

National Cheng Kung University,

Yasushi Okada

University of Tokyo

Disruptive Technologies - IoT, AI/ML, Neuromorphic & Quantum Computing Committee
Chair

Yuchao Yang

Peking University

Co-Chair

Haifeng Yu

Tsinghua University

Co-ChairDmitri Strukov

University of California, Santa Barbara

Members

Fabrice Meriaudeau

Universiti de Bourgogne

Luat Vuong

University of California, Riverside

Xizhu Peng

University of Electronic Science and Technology of China

G.P. Li

University of California, Irvine

Can LiHP Labs

Xiaojian Zhu

Ningbo Institute of Materials Technology and Engineering (NIMTE)

Bipin RajendranKing's College London

Le Ye

Peking University

Bei Zeng

Hong Kong University of Science and Technology

Zhangqi Yin

Beijing Institute of Technology

Heng Fan

Institute of Physics, CAS

Galan Moody

University of California, Santa Barbara

Gina Adam

George Washington University

16

Sponsors
Diamond Sponsor

Platinum Sponsor

Gold Sponsor

Silver Sponsor

Bronze Sponsor

17

Best Paper Award Finalists
FR1A4-3: Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate
Insulator Enabled by Oxygen Vacancy Related Dipoles
Guoqing Zhang1 , Yue Peng1, Wenwu Xiao1, 2, Fenning Liu1 , Yan Liu1 , Genquan Han1, Yue Hao1; 1Xidian University, China,
2Xi’an UniIC Semiconductors, China
FR3P1-4: Formation Mechanism of a Rounded SiGe-Etch-Front in an Isotropic Dry
SiGe Etch Process for Gate-All-Around (GAA)-FETs
Yu Zhao, Taku Iwase, Makoto Satake, Hirotaka Hamamura; Hitachi, Ltd., Japan
FR4P1-5: Forming Low-Resistivity Tungsten Contacts and Avoiding Fluorine
Diffusion by Flash Lamp Annealing (FLA)
Shogo Shigemasu, Hideaki Tanimura, Hikaru Kawarazaki, Shinichi Kato; SCREEN Semiconductor Solutions Co. Ltd.,Japan
FR2A1-3: White Noise Characterization of N-MOSFETs for Physics-Based
Cryogenic Device Modeling
K. Ohmori, S. Amakawa; Device Lab Inc., Japan
FR1A2-3: GaN Super-Heterojunction Schottky Barrier Diode with over 10 kVBlocking Voltage
Sang-Woo Han , Jianan Song ,Rongming Chu; Pennsylvania State University, USA
FR2A3-2: Development of Integrated Device Simulator for Quantum Bit Design:
Self-Consistent Calculation for Quantum Transport and Qubit Operation
Hidehiro Asai, Shota Iizuka, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Kimihiko Kato, Hiroyuki Ota,
Takahiro Mori; National Institute of Advanced Industrial Science and Technology (AIST), Japan
TH3P3-4: On the Critical Role of Ferroelectric Thickness for Negative CapacitanceTransistor Optimization
Om Prakash1, Aniket Gupta1,2, Girish Pahwa3, Yogesh S. Chauhan4, Hussam Amrouch5; 1Karlsruhe Institute ofTechnology, Germany, 2National Institute of Technology Uttarakhand, India, 3University of California, Berkeley, USA, 4
Indian Institute of Technology Kanpur, India, 5 University of Stuttgart, Germany
FR2A4-3: ESD Co-Design of mm-Wave RF Switch in 22nm SOI
Feilong Zhang, Cheng Li, Mengfu Di, Zijin Pan, Han Wang, Albert Wang; University of California, Riverside, USA
TH2P4-3: Growth Behavior and Mechanism of Tin Whisker on Isolated SnAg
Solder Under Compressive StressShuhui Chen , Xundi Zhang , Lingyue Tan ,Anmin Hu , Huiqin Ling , Ming Li, Tao Hang; Shanghai Jiao Tong
University, China
18

WE2P4-5: Cryogenic Operation of 3D Flash Memory for New Applications and Bit
Cost Scaling with 6-Bit per Cell (HLC) and Beyond
Yuta Aiba, Hitomi Tanaka, Takashi Maeda, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Toshio Fujisawa, Mie
Matsuo; Kioxia Corporation, Japan
TH2P1-4: A Flexible Electroencephalography Electronic Skin Based on Graphene
Ge Deng1,2,Yan-cong Qiao1 ,Ning-qin Deng1 ,Xiao-shi Li1 ,Qi Wu1 ,Ying-fen Zeng1,2, Si-fan Yang2, Tian-Ling Ren1;
1Tsinghua University, China 2Graduate School at Shenzhen, Tsinghua University,China
WE2P1-5: A Novel Piston-Like Piezoelectric Micromachined Ultrasonic Transducer
Based on Mass Loading EffectLei Wang，Jie Zhou, Wei Zhu, Zhipeng Wu, Wenjuan Liu, Chengliang Sun; Institute of Technological Sciences, China
TH2P2-4: A Sensitive Vertical Standing Graphene/Silicon Schottky Photodetector to
Angle Changes
Ning-Qin Deng1,4 , Zhen-Yi Ju1, Ge Deng1, Hou-Fang Liu1, Xiang-Shun Geng1 , Xiu-Feng Jia1 , Jun Ren1 , Tian-Zhong
Yang2 , Dan Xie1 , Yi Yang1 , He Tian1, Tian-Ling Ren1,3; 1Tsinghua University, China, 2Chinese Academy of Sciences,
China, 3Center for Flexible Electronics Technology, Tsinghua University, Beijing, China, 4National Institute of Metrology(NIM), Beijing, China
WE2P2-4: A Design of Horizontal Perovskite Nanowire LED for Better Light
Extraction
Qianpeng Zhang1,2, Yuanjing Lin3, Xiaofei Sun1 , Bryan Cao1, Haoning Tang,4, Zhiyong Fan1,2; 1 The Hong Kong Universityof Science and Technology, China, 2HKUST-Shenzhen Research Institute, China, 3Southern University
TH2P3-4: Universal Non-Volatile Resistive Switching Behavior in 2D Metal
Dichalcogenides Featuring Unique Conductive-Point Random Access Memory EffectXiaohan Wu1 , Ruijing Ge1 , Yuqian Gu1 , Emmanuel Okogbue2 , Jianping Shi3 , Abhay Shivayogimath3 , Peter Bøggild4 ,Timothy J. Booth4 , Yanfeng Zhang3 , Yeonwoong Jung2 , Jack C. Lee1, Deji Akinwande1 ; 1University of Texas at Austin,
Austin, USA, 2University of Central Florida, USA, 3Peking University, China, 4Technical University of Denmark,Denmark
WE2P3-4: A Compact Model for Transition Metal Dichalcogenide Field EffectTransistors with Effects of Interface Traps
Yifei Xu1 , Weisheng Li1 , Dongxu Fan, Yi Shi, Hao Qiu , Xinran Wang; Nanjing University, China
TH1A3-1: A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile
MemoryLaura Bégon-Lours; IBM Zurich Research Laboratory, Switzerland

19

Best Student Paper Award Finalists
FR1A4-4:Selecting and Optimizing Threshold Switching Materials and Devices for
Stochastic Neuron
Kuan Wang, Qing Hu, Qi Lin, Dayou Zhang, Yuhui He, Hao Tong, Xiang Shui Miao; Huazhong University of Science andTechnology, China
FR4P1-4:Optimization of Tilted Profile in Ultra-High Aspect Ratio Etch Process for 3D
NAND Flash Memory
Jinqing He1,2,3, Zhiliang Xia1,2,3, Meng Wang3 , Guangxuan Zhang3 , Haiqing Dou3 , Zongliang Huo1,2,3; 1 University ofChinese Academy of Sciences, China, 2Institute of Microelectronics of the Chinese Academy of Sciences,
China,3Yangtze Memory Technologies Company, Ltd.,China
FR3P1-5:Optimization of Bump Defect at High-Concentration In-Situ Phosphorus
Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application
Dongxue Zhao1,2,3, Zhiliang Xia1,2,3, Linchun Wu3 , Tao Yang1,2,3, Dongyu Fan1,2,3, Yuancheng Yang3 , Lei Liu3 , Wenxi
Zhou3 , Zongliang Huo1,2,3; 1Institute of Microelectronics of the Chinese Academy of Sciences, China, 2University ofChinese Academy of Sciences, China, 3Yangtze Memory Technologies Company, Ltd., China
TH3P1-3:Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at
Cryogenic Temperature
Shohei Sekiguchi, Min-Ju Ahn , Takuya Saraya , Masaharu Kobayashi, Toshiro Hiramoto; University of Tokyo, Japan
FR1A1-3:Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film
Transistors with Sub-1.2 nm Equivalent Oxide Thickness
Kaizhen Han, Subhranu Samanta, Chen Sun, Jishen Zhang, Zijie Zheng, Xiao Gong; National University of Singapore,
Singapore
FR1A2-2:Channel Mobility Properties of β-Ga2O3 MOSFETs on Si Substrate Fabricatedby Ion-Cutting Process
Yibo Wang,1, Wenhui Xu,2, Genquan Han,1 Tiangui You,2 Haodong Hu,1 Yan Liu,1 Hao Huang,2 Xin Ou,2 Xiaohua Ma,1 Yue Hao1;
1Xidian University, China, 2Chinese Academy of Sciences, China
TH3P3-2:Revisiting the Definition of Ferroelectric Negative Capacitance Based on
Gibbs Free Energy
Yuanyuan Zhang1,2, Xueli Ma1,2, Xiaolei Wang1,2, Jinjuan Xiang1,2, Wenwu Wang1,2; 1Institute of Microelectronics, Chinese
Academy of Sciences, China, 2University of Chinese Academy of Sciences, China
TH3P3-5:Modelling and Design of FTJs as High Reading-Impedance Synaptic Devices
R. Fontanini, M. Massarotto, R. Specogna, F. Driussi, M. Loghi, D. Esseni ; University of Udine, Italy

20

WE1P2-2:Hot-Carrier-Induced Reliability Concerns for Lateral DMOS Transistors with
Split-STI Structures
Li Lu1, Ran Ye1, Siyang Liu1, Zhibo Yin1, Yuanchang Sang1, Weifeng Sun1, Wei Su2, Feng Lin2, Shulang Ma2, Yuwei Liu2;
1Southeast University,China, 2CSMC Technologies Corporation, China
WE1P2-4:Nonlinear Weight Quantification for Mitigating Read Disturb Effect on
Multilevel RRAM-Based Neural Network
Lindong Wu, Zongwei Wang , Zhizhen Yu, Yabo Qin, Qingyu Chen, Yimao Cai , Ru Huang; Peking University, China
WE1P3-5:Low Temperature Packaging for Ion-Sensitive Organic Field Effect Transistor
Yixiao Tang, Wei Tang, Yukun Huang, Yawen Song, Bang Ouyang, Xiaojun Guo; Shanghai Jiao Tong University, China
TH3P4-3:Statistical Feature Extraction and Hybrid Feature Selection for Material
Removal Rate Prediction in Chemical Mechanical Planarization Process
Wenlan Jiang1 , Chunpu Lv1 , Bing Yang2 , Fuquan Zhang2 , Ying Gao2 , Tao Zhang1 , Huangang Wang1; 1Tsinghua
University, China, 2Semiconductor Technology Innovation Center (Beijing) Crop, China
WE1P4-4:Three-Orders Improvement of Endurance in Hafina Based MFS Capacitor
Through CF4 Plasma Pre-Treatment
Shuxian Lv1, 2, Yan Wang1, 2, Zhaomeng Gao1, 2, Zhiwei Dang1, 2, Pengfei Jiang1, 2, Peng Yuan1,2, Qing Luo1, 2, Shengjie
Zhao1 and Hangbing Lv1, 2; 1Institute of Microelectronics of Chinese Academy of Sciences, China; 2University of Chinese
Academy of Sciences, China
WE2P1-4:Double-Deck Metal Solenoids 3D Integrated in Silicon Wafer for Kinetic
Energy Harvester
Nianying Wang1, 2, 3, Ruofeng Han1, 3, Changnan Chen1, 3, Jiebin Gu1, 3, and Xinxin Li1, 2, 3; 1Shanghai Institute ofMicrosystem and Information Technology, Chinese Academy of Sciences, China, 2ShanghaiTech University, China,
3University of Chinese Academy of Sciences, China
TH2P2-2:β-Ga2O3 Micro-Flake FET SBPD with Record Detectivity of 3.87×1017 Jones for
Weak Light Detection
Shunjie Yu1 , Mengfan Ding1 , Wenxiang Mu2 , Zhitai Jia2 , Xiaohu Hou1 , Zhongfang Zhang1 , Pengju Tan1 , Xiaolong
Zhao1,Guangwei Xu1 , Shibing Long1; 1University of Science and Technology of China, China; 2Shandong University, China
TH2P2-3:Large Area and Flexible Organic Active Matrix Image Sensor Array
Fabricated by Solution Coating Processes at Low Temperature
Xiao Hou1, Wei Tang1, Sujie Chen1, Jianghu Liang2, Hanyang Xu1, Bang Ouyang1, Ming Li1, Yawen Song1, Chun-chao Chen2, Patrick
Too3, Xiaoqing Wei4, Libo Jin4, Gang Qi5, Xiaojun Guo1; 1School of Electronic Information and Electrical Engineering, Shanghai
Jiao Tong University, China, 2School of Material Science and Engineering, Shanghai Jiao Tong University, China, 3FlexEnable, UK,
4iRay Technology, China, 5Tianma Microelectronics, China
21

FR4P2-5:Semi-Disposable Self-Adhesive Sensor System for Wearable
Electrocardiogram Detection
Fangran Bian, Sujie Chen, Ming Li, Yishen Pei, Xiaojun Guo; Shanghai Jiao Tong University, China
TH2P3-5:A Study of Materials Impacts on Graphene Electrostatic Discharge Switches
Cheng Li, Mengfu Di, Zijin Pan, Albert Wang; University of California, Riverside, USA
TH1A3-2:A Novel Leaky-FeFET Based True Random Number Generator with Ultralow
Hardware Cost for Neuromorphic Application
Tianyi Liu1 , Jin Luo1 , Xinming Wei1 ,Qianqian Huang1,2 , Ru Huang1,2; 1 Peking University, China, 2National Key Laboratory of
Science and Technology on Micro/Nano Fabrication, China
FR3P3-4:Artificial Neuron with Spike Frequency Adaptation Based on Mott Memristor
Qiumeng Wei1 , Jianshi Tang1,2 , Xinyi Li1 , Yanan Zhong1 , Bin Gao1,2, He Qian1,2, Huaqiang Wu1,2; 1 Institute ofMicroelectronics, Tsinghua University, China, 2Beijing Innovation Center for Future Chips (ICFC), Tsinghua University,
China

22

Best Interactive Paper Award Finalists
WTHPE-007: Seed layer dependent bottom pinned magnetic tunnel junctions
Weibin Chen1,2, Shaohua Yan2,3, Yaodi Yang2 , Zhiqiang Cao2,3, Yixuan Lin1 Zitong Zhou2,3, Shishen Yan1, Qunwen leng2,3,4;
1Shandong University, China, 2Qingdao Research Institute, Beihang University, China, 3School of Integrated Circuit Scienceand Engineering, Beihang University, China, 4Goertek Inc, China
WTHPE-012: Development of HSQ replacement gate process for silicon
nanowire MOS devices
Kun Tu1,2, Xiaoqiao Dong2, Baotong Zhang2, Ru Huang2, Ming Li2, Peimin Lu1; 1Fuzhou University, China, 2Peking University,
China
WTHPE-018:WS2 pMISFETs by Sputtering and Sulfur-Vapor Annealing with
TiN/HfO2-Top-Gate-Stack, TiN Contact and Ultra-Thin Body and Box
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui,
Tetsuya Tatsumi, Shigetaka Tomiya; Hitoshi Wakabayashi Tokyo Institute of Technology, Japan
WTHPE-029: Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes
Hehe Gong1, Xinxin Yu1,2, Yang Xu1, Jianjun Zhou2, Fangfang Ren1, Shulin Gu1, Rong Zhang1, Jiandong Ye1; 1Nanjing
University, China, 2Nanjing Electronic Devices Institute, China
WTHPE-039: A first-principles study of the interface property in oxide-based
RRAM
Nianduan Lu1, Shang Ma12, Jiezhi Chen3, Qian Zhou2, Ling Li1, Ming Liu1; 1Institute of Microelectronics of Chinese Academyof Sciences, China,2 Beihang Univ., China, 3Shandong Univ., China
WTHPE-040: Ag/HfO2-based Threshold Switching Memristor as an Oscillatory
NeuronQilin Hua1, Chunsheng Jiang2, Weiguo Hu1; 1Chinese Academy of Sciences, China, 2China Academy of Engineering Physics,
China
WTHPE-051: HTRB & THB Reliability Improvement Using Capping Layer inPower Discrete Trench Devices
David Goh, W. J. Chen, F. Tahir, Shin Phay Lee, V. C. Ngwan; STMicroelectronics Pte Ltd, Singapore
WTHPE-055: Error Correction Scheme for Reliable RRAM-Based In-Memory
ComputingYixuan Hu, Kaili Cheng, Zuodong Zhang, Runsheng Wang, Yuan Wang, Ru Huang; Peking University, China
WTHPE-065: Crosstalk of octagonal TSV array arrangement based on
differential signal
Jiang Han1, Ziyu Liu2, Ziyuan Zhu1, Lin Chen1, Qingqing Sun1; 1Southwest University, China; 2Fudan University, China
23

WTHPE-071: Core-Shell Dual-Gate Nanowire Synaptic Transistor with
Short/Long-Term Plasticity
Md. Hasan Raza Ansari1, Daehwan Kim1, Seongjae Cho1, Jong-Ho Lee2, Byung-Gook Park2; 1Gachon University, South Korea,
2Seoul National University, South Korea
WTHPE-080: Visible Light Sensitivity Enhancement of CMOS Image Sensor
with Pseudo High Refractive Index Film Integrated by Directed Self-Assembly
Process
I. Oshiyama, T. Shigetoshi, I. Mita, N. Sumitani, T. Oinoue, S. Saito, T. Okawa, Y. Ebiko, K. Yokochi, Y. Kitano, Y. Hagimoto,T. Hirano, H. Iwamoto; Sony Semiconductor Solutions Corp., Japan
WTHPE-089: Fabrication and Research of MSM UV Detectors with Different
Electrode Materials
Jun Liao, Cheng Wu, Rui Zhang, Yong Li, Tao Li; Shaoyang University, China
WTHPE-090: Design for a TE Mode Magneto-optical Circulator Based on
Asymmetric Silicon Slot Waveguides
Yucong Yang1, Shuyuan Liu1, Wei Yan1, Yan Zhang2, Jun Qin1, Longjiang Deng1, Lei Bi1; 1University of Electronic Science andTechnology of China, China, 2Chongqing United Microelectronics Center, China
WTHPE-099: Circuit Design and Experimental Verification of Low-voltage
Organic Field-effect Transistor-based Common Source Amplifier
Li’ang Deng, Wei Tang, Lei Han, Yukun Huang, Xiaojun Guo; Shanghai Jiao Tong University, China
WTHPE-103: Nanoscale Inverters Enabled by a Facile Dry-Transfer Technique
Capable of Fast Prototyping of Emerging Two-Dimensional Electronic Devices
Yachun Liang, Jiankai Zhu, Fei Xiao, Bo Xu, Ting Wen, Song Wu, Jing Li, Juan Xia, Zenghui Wang; University of Electronic
Science and Technology of China, China
WTHPE-117: Optoelectronic Synaptic Devices Based on the Heterostructure of
Silicon Nanomembrane and P3HT
Peiwen Huang1, Lei Yin1, Yayao Li1, Yue Wang1, Deren Yang1,2, Xiaodong Pi1,2; 1State Key Laboratory of Silicon Materials &School of Materials Science and Engineering, Zhejiang University, China,2Institute of Advanced Semiconductors, Hangzhou
Innovation Center, Zhejiang University, China
WTHPE-102: Lateral p−n Homojunction formed by Local Doping for HighPerformance Photodetector
Jiacheng Sun1,2, Junying Zhang2, Yuyan Wang1,2; 1Tsinghua University, China,2Beihang University, China

24

Plenary Keynote 1
Haijun Zhao, Co-CEO, SMIC., PR China“Creating Values through Innovations on Mature Nodesof Technologies of Integrated Circuits”

Abstract：IC manufacturing has followed Moore's Law in the past fifty years, with a newfab for each new node every one and half years to two years, resulting in a big challenge to
IC IDM players. IC foundry manufacturing is a good solution to buffering the hard landing of
the quick retirement of each fab after its peak period of two years. This talk explains thebenefits of Moore's Law and industry's difficulty in following the fast moving and never endingof market needs, discusses the patterns of product evolution in various application sectors,
and gives examples of making optimal uses of fabs from standard logic to embedded
applications by continuous development of derivatives of the first set of technology per
Moore's Law. It concludes that IC foundry manufacturing can plan and operate a fab by
Moore's Law and More-Than Moore practices through innovations within a maturetechnology and make successful business by extending the fab lifetime to meet the needs ofmarkets at different phases.

Biography
Dr. Haijun Zhao joined SMIC in 2010 as a Vice President for 12-inch operations andbecame COO and Executive Vice President in 2013. In July 2013, Dr. Zhao was appointed as
General Manager of Semiconductor Manufacturing North China (Beijing) Corporation, a joint
venture company established in Beijing and a SMIC subsidiary. In May 2017, Dr. Zhao was
appointed as CEO, and later, in October, Co-CEO of SMIC. Dr. Zhao received his BS and Ph.D.
degrees in electronic engineering from Tsinghua University, and MBA degree from the
University of Chicago. Before joining SMIC, he had 16 years of overseas experience in wellknown research institutes and manufacturing corporations in semiconductor field.

25

Plenary Keynote 2
Professor Xiang Zhang, President and Vice-Chancellor
The University of Hong Kong, Hong Kong SAR, PR China“How to build a camera with highest resolution: aphotonics perspective”

Abstract：Compared with electronics that is already at nanoscale today, photonic circuits
remain rather bulky due to optical diffraction limit. This Keynote will discuss physics in scaling
down of photonics that is important for both optical sciences and modern information
technology. The talk will discuss a new optical cavity design using indefinite medium thatexhibits an anomalous scaling law than conventional cavities, which was confirmed
experimentally. The talk will further present nanoscale waveguide and laser circuits using
hybrid plasmons that can be multiplexed into a single waveguide-an effort towards integrated
photonics at nano-scale. The talk will also discuss non-Hermitian optics that is capable to sortcolor simultaneously at nano-scale for potential ultrahigh resolution camera.

Biography
Professor Xiang Zhang is currently the President and Vice-Chancellor of the University ofHong Kong (HKU). Prior to joining HKU in July 2018, he was the Ernest S. Kuh Endowed Chair
Professor at the University of California, Berkeley, Director of the Nano-scale Science andEngineering Center (SINAM), and Director of the Materials Science Division at the Lawrence
Berkeley National Laboratory. Professor Zhang received his PhD from UC Berkeley (1996), MS
from the University of Minnesota and MS/BS from Nanjing University. He was an AssistantProfessor at Pennsylvania State University (1996-1999), and Associate Professor and Full
Professor at UCLA (1999-2004) prior to joining Berkeley's faculty in 2004. In 2008, Professor
Zhang's research was selected by Time Magazine as one of the "Top Ten Scientific Discoveriesof the Year" and "50 Best Inventions of the Year", Discover Magazine's "Top 100 Science
Stories" in 2007, and R&D Magazine's top 25 Most Innovative Products of 2006. His researchhas been frequently featured in international media, including BBC, CNN and the Wall Street
Journal. In 2019, his research team’s work on ‘Casimir effect’ at UC Berkeley was selected as
one of the Top 10 Breakthroughs for 2019 by Physics World.

26

Plenary Keynote 3
Teruo Hirayama, Executive Chief Engineer, Sony Corp.,
Japan“The power of image sensors for innovation”

Abstract：CCD image sensor created a consumer video camera market in the early 80s.
Then, digital still cameras that incorporated it replaced film cameras because they don’t needpost-production process such as development, printing, and enlargement. Therefore, the film
camera market shrank drastically. Around 2000, CMOS image sensor was incorporated into
cellular phones due to digital output and low power consumption. However, CCD was yet
used in video and still cameras because its image quality was superior to that of CMOS image
sensor. Accordingly, back illuminated CMOS image sensor was developed. Its image quality
exceeded that of CCD. So, it rapidly replaced CCD in video and still cameras. While backilluminated CMOS image sensor contributed to spread of smartphones that need cameras ofhigh image quality. As smartphones spread, the markets of video and still cameras have been
shrinking, but that of smartphones is growing. Thus, most of image sensors in these markets
are back illuminated CMOS image sensor nowadays. On the other hand, image sensors are
pioneering new markets for automobiles, medical care, agriculture, and so on by taking
advantage of information of photons, such as wavelength, polarization, and time of flight,
which human eyes cannot use. Furthermore, highly efficient image sensors are required forautonomic systems such as face recognition, automatic driving, and inspection in factories.
This talk will present technological challenges of image sensors for replacing other devices
and creating markets, then show the directions of advances of image sensors.

Biography
Teruo Hirayama joined Sony Corporation in 1981. He worked on SRAM and CMOS LSI in
the research division of the semiconductor group, and then developed embedded memory
technologies. He also developed stacked wide band DRAM on a LOGIC chip to solve issues of
embedded DRAM in a LOGIC chip. Subsequently he joined the image sensor division in 2002
where he developed back-illuminated CMOS image sensor and stacked CMOS image sensor,
which were launched into the market in 2009 and 2012, respectively. He played key role indevelopment of CMOS image sensor technologies in Sony. He had managed the developmentof semiconductor devices as a senior general manager in the semiconductor technology
development division since 2010. He was Senior Vice President in June 2013 and was
appointed as president of the device and material R&D group in April 2014, where he was27

responsible for R&D of displays, batteries, materials, and semiconductor devices. He is now
Executive Chief Engineer in Sony Corporation.

28

Plenary Keynote 4
Prof. Arokia Nathan
University of Cambridge, UK“Thin Film Transistor Architectures for Advanced Analog
Signal Processing”
Abstract：Thin film semiconductor materials, such as oxides and organics, are becoming key
for the future flexible electronics because of their potentially wide band gap, hence hightransparency and low OFF current, compared with the ubiquitous silicon counterparts. Thesematerial systems can be processed at low temperature and at low fabrication cost, whichmakes them amenable for integration on a wide range of substrate materials including plastic
and paper.
This presentation will review the new generation of applications using selected oxides
and organics ranging from large area flexible electronics to the newly emerging Internet ofThings. While the thin film transistor continues to evolve, producing devices with higher
mobility, steeper sub-threshold slope and lower threshold voltage, practical analog signal
processing circuits are constrained by issues related to non-uniformity, electrically- andillumination-induced instability, and temperature dependence. We will discuss the criticaldesign considerations of displays, sensors and sensor interfaces, along with advanced signal
processing architectures, to show how device-circuit interactions should be handled and how
compensation methods can be implemented. In particular, the quest for low power becomes
highly compelling in newly emerging application areas related to wearable devices in theInternet of Things. We will discuss thin-film transistor operation near the OFF state, driven by
the pivotal requirement of low supply voltage and ultralow power. The operation of thewearable device is challenged by limited battery lifetime even if augmented with energy
harvesting. One of the key requirements for design of flexible electronics for these emerging
applications is physically-based circuit models, which requires good knowledge of theunderlying transport mechanisms in the thin film transistor, and in particular, the associateddensity of states and field-effect mobility. The major developments in thin film transistor
modeling for computer-aided design of circuits and systems will be reviewed, along withsimple and compact analytical description of the current-voltage characteristics of thin filmtransistors in the above-threshold and sub-threshold regions for expedient circuit simulations.

Biography
Arokia Nathan (S’84–M’87–SM’99–F’10) is a leading pioneer in the development andapplication of thin film transistor technologies to flexible electronics, display and sensor

29systems. Following his PhD in Electrical Engineering, University of Alberta, Canada in 1988, hejoined LSI Logic USA and subsequently the Institute of Quantum Electronics, ETH Zürich,
Switzerland, before joining the Electrical and Computer Engineering Department, University ofWaterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University
College London as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University
in 2011 as the Chair of Photonic Systems and Displays, and he is currently a Bye-Fellow andTutor at Darwin College. He has over 600 publications including 4 books, and more that 110
patents and four spin-off companies. He is a Fellow of IEEE, an IEEE/EDS Distinguished Lecturer,a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), andwinner of the 2020 IEEE EDS JJ Ebers Award.

30

Plenary Keynote 5
Prof. Ru Huang
Vice President, Peking University, China“Ferroelectric-based device: revived as a low-power
technology booster for diverse applications”
Abstract：Thanks to the discovery of hafnium-based ferroelectric oxides, the ferroelectricbased device has revived and attracted extensive attentions from both material and device
communities recently, due to its fully CMOS compatibility and highly scalability. This talk will
give a broad overview as well as insights on the various kinds of hafnium oxide based
ferroelectric devices for diverse applications, including ultralow-power logics, memory, andneuromorphic computing. For low-power logic applications, ferroelectric negative-capacitance
FET (NCFET) with steep-slope can break the fundamental limitation of subthreshold swing inconventional MOSFETs, while the negative-capacitance effect in ferroelectric film has aroused
scientific controversy. This talk will discuss the current different understandings of negativecapacitance effect, and re-assess the possibility of NCFET as a steep-slope device for highspeed and low-voltage operation. Besides, the nonvolatile polarization feature in the
ferroelectric can be used to store information in various ways as memory devices with lower
write energy. This talk will present the technical challenges and state of the art of ferroelectric
memories, and provide some prospects for their future development, focusing on ferroelectric
random access memory (FeRAM), ferroelectric field-effect transistor (FeFET)and ferroelectric
tunnel junction (FTJ). The reliability issues of hafnium-based ferroelectric FET and capacitancewill also be discussed, especially the mechanisms of breakdown during endurance and/or
retention. Moreover, by exploiting the inherent physics of ferroelectric polarization switching,
this talk will present that the ferroelectric-based devices can be utilized for the hardware
implementation of artificial neurons and synapses, providing an ultralow hardware-cost andhigh energy-efficient solution for neuromorphic computing systems.

Biography
Prof. Ru Huang is currently a professor and Vice-president, Peking University. She is anelected academician of Chinese Academy of Science, an elected member of IEEE Fellow and
TWAS Fellow. Her research interests include nano-scaled CMOS devices, ultra-low-power new
devices, new device for neuromorphic computing, emerging memory technology and device
variability/reliability. She has authored or coauthored five books, 5 book chapters and morethan 300 papers, including more than 100 papers in IEDM (39 IEDM papers from 2007 to 2020),
VLSI Technology Symposium, IEEE EDL and IEEE T-ED, and gave more than 50 keynote/invited
talks at international conferences. She is the holder of more than 200 granted patents (49 U.S.

31

patents). Prof. Huang is an Associate Editor-in-Chief of journal of “Science China: Information
Sciences”. She is the winner of National Technology Invention Award, National Award of
Science and Technology Progress and many other awards. Prof. Ru Huang has been the leader
of many major national projects, as well as a couple of international collaborative projects.

32Plenary Keynote 6
Dr. Jeff Xu
Director of HiSilicon Research“Ubiquitous Computing Drives Future Semiconductor
Technology”
Abstract ： After 55 years unprecedented journey of Moore’s Law, the semiconductor
industry faces conventional transistor scaling physical limits and von Neumann architecture
bottleneck. Though tremendous efforts have been directed towards improving logic scaling
PPA (performance, power and area) including device architecture innovations, EUV
introduction, and DTCO (Design Technology Co-Optimization), etc., performance/power gain
diminishes and cost per transistor reverses conventional Moore’s Law trend. On the other
hand, performance of HPC (high performance computing) is limited by insufficient memory
bandwidth, aka, memory wall. This paper reviews post Moore’s Law era technology/function
scaling options to meet demands of ever increasing chip performance from ubiquitous
computing for the next two decades. The technology options include but not limited to thedevelopment of monolithic 3D memory to break the memory wall, integration of BEOL
compatible low power logic for function scaling, introduction of in-memory devices to enable
non-von Neumann architecture and gain system-level performance, and the adoption of
2D/CNT channel materials for logic and memory applications.

Biography
Dr. Jeff Xu is the Director of HiSilicon Research. He has 24 years of experiences in the fieldof semiconductor technology research and development. Jeff started his semiconductor careerat Intel after completing his postdoctoral research at the University of Michigan. He joined
TSMC corporate R&D in Hsinchu after 10 years tenure at Intel. Before joining HiSilicon, Jeffworked at Qualcomm in San Diego. Jeff holds nearly one hundred patents in the fields ofsemiconductor logic and memory devices and process technologies.

33

Plenary Speaker: Closing Banquet
Prof. Ilesanmi Adesida
Provost, Nazabaryev University, Kazakhstan“The Development of an International Research University
in the Big Steppe of Kazakhstan”
Abstract：Many of us present at this conference are associated with or work in world-classuniversities. The prevailing environment or ambience of excellence is taken for granted andthe commanding ingredients responsible for such conditions are not completely obvious ortransparent to the average faculty working to advance himself or herself professionally. Onlya few universities under fifty years of existence have attained world-class status as measured
through academic excellence, research excellence, and engagement with industry and society
at large. In this talk, we will look at the individual and aggregate conditions needed to attainworld class status. We will also discuss the establishment and growth of a ten-year old
institution, Nazarbayev University in Kazakhstan, as a case study.

Biography
Prior to his present appointment at Nazarbayev University in Kazakhstan, Professor
Adesida served as the Provost and Vice Chancellor for Academic Affairs at the University of
Illinois at Urbana-Champaign (UIUC). He also served as the Dean of the College of Engineeringand the Director of the Micro and Nanotechnology Laboratory at the same institution. As
Nazarbayev University’s Provost, Professor Adesida oversees NU’s entire academic andresearch program, including creating innovative educational initiatives, awarding of research
grants as well as overseeing the creation and implementation of quality assurance programs.
During his tenure at Illinois, he was instrumental in creating many innovative programs
including the iFoundry for Engineering Education, the Applied Research Institute, the Advanced
Digital Systems Center (in Singapore) and the novel engineering-based Carle-Illinois College ofMedicine. His awards include the Oakley-Kunde Award for Excellence in Undergraduate
Education, TMS John Bardeen Award for outstanding contributions to electronic materials andbeing named an outstanding graduate of the EECS Department at the University of California,
Berkeley in 2009. He was awarded the Distinguished Service Award by IEEE Electron Device
Society of which he served as President previously. He served as the Chair of the Engineering
Advisory Board of the National Science Foundation, a member of the Hong Kong PhD
Fellowship Program Committee, a member of International Expert Panel for the National
Research Foundation of Singapore, and a member of the Advisory Committee of the Carnegie
Foundation African Diaspora Fellowship Program. He is very much interested in issues ofscience, technology, engineering, and mathematics education, higher education, innovationand entrepreneurship, and their relevance to national development. He is very active in the
Asian Universities Alliance; and he is a member of the United States’ National Academy ofEngineering (NAE).

34

Tutorial 1 (TTUA1)“Flexible electronics + Display”
Thursday, April 8, 2021
09:00–12:30 ShuFeng Hall
Moderator: Tianling Ren, Jianbin Xu

TTUA1-1: 9:00 am
Skin-Inspired Organic Electronics
Zhenan Bao, Stanford University, California, USA

TTUA1-2: 10:10 am
2D material based flexible and wearable electronics
Jong-Hyun Ahn, Yonsei University, Seoul, Korea

TTUA1-3: 11:20 am
A Metal-Oxide Transistor Technology for Flexible Electronics
Man Wong, Hong Kong University of Science and Technology, Hong Kong, China

35

Tutorial TTUA1-1
Zhenan Bao, Director of Stanford Wearable Electronics
Initiative (eWEAR), Stanford University, USA“Skin-Inspired Organic Electronics”

Abstract：Skin is the body’s largest organ, and is responsible for the transduction of a vast
amount of information. This conformable, stretchable, self-healable and biodegradable
material simultaneously collects signals from external stimuli that translate into informationsuch as pressure, pain, and temperature. The development of electronic materials, inspiredby the complexity of this organ is a tremendous, unrealized materials challenge. However,
the advent of organic-based electronic materials may offer a potential solution to thislongstanding problem. Over the past decade, we have developed materials design concepts
to add skin-like functions to organic electronic materials without compromising theirelectronic properties. These new materials and new devices enabled arrange of new
applications in medical devices, robotics and wearable electronics. In this talk, I will discuss
several projects related to engineering conductive materials and developing fabrication
methods to allow electronics with effective electrical interfaces with biological systems,
through tuning their electrical as well as mechanical properties. The end result is a soft
electrical interface that has both low interfacial impedance as well as match mechanicalproperties with biological tissue. Several new concepts, such as “morphing electronics” and“genetically targeted chemical assembly - GTCA” will be presented.

Images of stretchable electronic skin. Image credit: Amir Foudeh, Sihong Liu of Bao Group,
Stanford University

Biography
Zhenan Bao is Department Chair and K.K. Lee Professor of Chemical Engineering, and bycourtesy, a Professor of Chemistry and a Professor of Material Science and Engineering at

36

Stanford University. Bao founded the Stanford Wearable Electronics Initiate (eWEAR) in 2016
and serves as the faculty director.
Prior to joining Stanford in 2004, she was a Distinguished Member of Technical Staff in BellLabs, Lucent Technologies from 1995-2004. She received her Ph.D in Chemistry from the
University of Chicago in 1995. She has over 550 refereed publications and over 65 US patents
with a Google Scholar H-Index >160.
Bao is a member of the National Academy of Engineering and the National Academy ofInventors. She is a Fellow of MRS, ACS, AAAS, SPIE, ACS PMSE and ACS POLY.
Bao was selected as Nature’s Ten people who mattered in 2015 as a “Master of Materials”
for her work on artificial electronic skin. She was awarded the inaugural ACS Central Science
Disruptor and Innovator Prize in 2020, the Gibbs Medal by the Chicago session of ACS in 2020,
the Wilhelm Exner Medal by Austrian Federal Minister of Science 2018, ACS Award on Applied
Polymer Science 2017, the L'Oréal-UNESCO For Women in Science Award in the PhysicalSciences 2017, the AICHE Andreas Acrivos Award for Professional Progress in Chemical
Engineering in 2014, ACS Carl Marvel Creative Polymer Chemistry Award in 2013, ACS Cope
Scholar Award in 2011, the Royal Society of Chemistry Beilby Medal and Prize in 2009, the
IUPAC Creativity in Applied Polymer Science Prize in 2008.
Bao is a co-founder and on the Board of Directors for C3 Nano and PyrAmes, both are siliconvalley venture funded start-ups. She serves as an advising Partner for Fusion Venture Capital.

37

Tutorial TTUA1-2
Jong-Hyun Ahn, School of Electrical and Electronic
Engineering, Yonsei University, Korea“2D material based flexible and wearable electronics”

Abstract： Rapid advances in synthesis of graphene and 2D materials, and fabrication
methods for functional devices enable sophisticated types of functionality and theirapplication to various emerging electronics, such as flexible, wearable and optoelectronic
applications,that cannot be addressed with conventional materials. In this talk, I present that
two-dimensional semiconductor/semi-metal materials can play critical roles in this context,
through demonstrations of complex, mechanically assembled electronic and optoelectronic
devices for flexible and wearable applications. Specifically, the mechanics of graphene and
MoS2 can yield various devices in distinct, engineered wearable geometries that cannot beeasily reproduced with conventional materials and/or conventional device layouts. Examples
of devices include touch, tactile sensors, wearable OLED display, and brain signal sensing
devices.

Biography
Jong-Hyun Ahn received Ph.D degree at POSTECH, Korea in 2001. He joined SKKU as an
assistant professor in 2008 after the postdoctoral experience in the University of Illinois at
Urbana-Champaign for several years and moved to Yonsei University in 2013. He holds
Underwood distinguished professor at Yonsei University, Korea. He has worked as a presidentof Korean Graphene Society and a director of the Center for strain engineered electronic
devices, supported by National Research Foundation of Korea. He also works as an associate
editor of NPG Asia Materials. His research includes fundamental and applied aspects ofnanomaterials and fabrication for flexible and wearable electronic devices, and recent
interest focuses on 2D material based wearable electronics with an emphasis on bioapplications. Jong-Hyun Ahn has authored more than 200 papers (H-index 73, Citation # >40,000), and is an inventor of more than 60 patents and has received numerous scientificawards, including the Korean National academy award (2018), the National Young Scientist
Award (2011) and the IEEE George Smith Award (2009).

38

Tutorial TTUA1-3
Man Wong, Hong Kong University of Science andTechnology, Hong Kong, China“A Metal-Oxide Transistor Technology for Flexible
Electronics”
Abstract：The realization of electronic systems on a flexible substrate is a recognized fertile
ground of research and development, with established applications in displays and extending
to future ones in biomedical sensing, etc. Depending on the requirements, further constraints
are imposed on the substrate, such as transparency, stretchability, bio-compatibility, and biodegradability. As active electronic elements, transistors are indispensable in the realization ofa non-trivial flexible electronic system. Much has been accomplished and more needs to bedone in resolving issues regarding the compatibility of a transistor technology with polymerbased flexible substrates. Following a broad overview of possible transistor technologies forthe construction of flexible electronics, focus will be placed on a thin-film transistor
technology based on metal-oxide semiconductors as one that fits the purpose. This
assessment will be justified on grounds of high optical transparency of wide band-gap
semiconductors, good electrical performance of the transistors, substrate-compatible lowtemperature processing, and good stability against mechanical deformation. Techniques ofrealizing metal-oxide thin-film transistors on a polyimide-based flexible substrate will be
discussed, in terms of material engineering, device architectural design, and processoptimization. Issues and challenges in the design of flexible circuits will be covered andexamples of flexible electronic systems currently under development will be introduced.

Biography
Man Wong was born in Beijing, China. From 1979 to 1984, he studied at theMassachusetts Institute of Technology, USA, where he obtained his BS and MS degrees inElectrical Engineering. From 1985 to 1988, he was at the Center for Integrated Systems at
Stanford University, USA, where he worked on tungsten-gate MOS technology and obtained
his PhD degree, also in Electrical Engineering. From 1988 to 1992, he was with the
Semiconductor Process and Design Center of Texas Instruments, USA and worked on themodeling and development of integrated-circuit metallization systems and dry/vapor
surface-conditioning processes. He is with the Department of Electronic and Computer
Engineering at The Hong Kong University of Science and Technology, Hong Kong. His researchinterests include micro-fabrication technology, device structure and material; physics andtechnology of thin-film transistor; organic light-emitting diode display technology; modelingand implementation of integrated micro-systems; and thin-film solar cell device and process
technology. He is a member of Tau Beta Pi, Eta Kappa Nu and Sigma Xi.

39

Tutorial 2 (TTUA2)“Future Communication and Computing”
Thursday, April 8, 2021
09:00–12:30 ShuShan Hall
Moderator: Qiming Shao, Yimao Cai

TTUA2-1: 9:00 am
6G: Towards a More Connected and Sustainable World
Mohamed-Slim Alouini, King Abdullah University of Science and Technology, Saudi Arabia

TTUA2-2: 10:10 am
Topological Spintronics for Low Energy Dissipation
Kang L. Wang, University of California, Los Angeles, USA

TTUA2-3: 11:20 am
In- and Near-Memory Computing Using 2D/3D Resistive Memories
Philip Wong, Stanford University, California, USA40

Tutorial TTUA2-1
Mohamed-Slim Alouini, King Abdullah University of
Science and Technology, Saudi Arabia“6G: Towards a More Connected and Sustainable World”

Abstract：The role of Internet and Communication Technology (ICT) in bringing about arevolution in almost all aspects of human life needs no introduction. It is indeed a well-known
fact that the transmission of the information at a rapid pace has transformed all spheres ofhuman life such as economy, education, and health to name a few. In this context, and as thestandardization of the fifth generation (5G) of wireless communication systems (WCSs) has
been completed, and 5G networks are in their early stage of deployment, the researchvisioning and planning of the sixth generation (6G) of WCSs are being initiated. 6G is expected
to be the next focus in wireless communication and networking and aim to provide newsuperior communication services to meet the future hyper-connectivity demands in the2030s. In addition, keeping in mind that urbanized populations have been the major
beneficiary of the advances offered by the previous generations of WCSs and motivated by
the recently adopted unitednations sustainability development goals intended to be achievedby the year 2030, 6G networks are anticipated to democratize the benefits of ICT. Indeed
these advantages are still not experienced by almost 4 billion people in the world who arestill “unconnected or under-connected” and who suffer as such from the “digital divide”, aterm coined in order to emphasize the lack of ICT infrastructure in many parts of the world.
Given this background, this talk aims to (i) provide an envisioned picture of 6G, (ii) serve as a
research guideline in the beyond 5G era, and (iii) go over the recently proposed solutions toprovide high-speed connectivity in under-covered areas in order to serve and contribute to
the development of far-flung regions.
The role of Internet and Communication Technology (ICT) in bringing about arevolution in almost all aspects of human life needs no introduction. It is indeed a well-known
fact that the transmission of the information at a rapid pace has transformed all spheres ofhuman life suchas economy, education, and health to name a few. In this context, and as thestandardization of the fifth generation (5G) of wireless communication systems (WCSs) has
been completed, and 5G networks are in their early stage of deployment, the researchvisioning and planning of the sixth generation (6G) of WCSs are being initiated. 6Gis expected to be the next focus in wireless communication and networking andaim to provide new superior communication services to meet the future hyperconnectivity demands in the 2030s. In addition, keeping in mind that urbanized populations
have been the major beneficiary of the advances offered by the previous generations of41

WCSs and motivated by the recently adopted united nation sustainability development
goals intended to be achieved by the year 2030, 6G networks are anticipated to democratize
the benefits of ICT and to bring global connectivity in a sustainable fashion in order tocontribute to developing tomorrow’s digitally inclusive and green world. In this context, thistalk aims to (i) provide an envisioned picture of 6G, (ii) serve as a research guideline in the
beyond 5G era, and (iii) go over some of the recently proposed green technologies to offer
high-speed connectivity not only in urban environments but also in under-covered areas inorder to serve and contribute to the development of far-flung regions.

Biography
Mohamed-Slim Alouini was born in Tunis, Tunisia. He received the Ph.D. degree inElectrical Engineering from the California Institute of Technology (Caltech), Pasadena, CA,
USA, in 1998. He served as a faculty member in the University of Minnesota, Minneapolis,
MN, USA, then in the Texas A&M University at Qatar, Education City, Doha, Qatar before
joining King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah
Province, Saudi Arabia as a Professor of Electrical Engineering in 2009.

42

Tutorial TTUA2-2
Kang L. Wang, University of California, Los Angeles, USA“Topological Spintronics for Low Energy Dissipation”

Abstract： Spintronics provides an energy-efficient high-speed nonvolatile approach fornext-generation memory and logic applications to complement CMOS technology, forexample, magnetoresistance random-access memory (MRAM) [1, 2]. First, we will briefly
show the recent progress on spintronic devices based on spin-transfer torque, spin-orbit
torque and voltage-controlled magnetic anisotropy for energy efficient applications. Firstly,
we describe the use of spin-momentum locking in topological surface states to realize a highspin-orbit torque (SOT) efficiency [3], showing the SOT of an order of magnitude larger thanconventional heavy metals at room temperature [4]. By tuning the Fermi level of topologicalinsulators (TIs), it was found that the topological surface states give rise to an observed giant
SOT value beyond that from bulk. Then, the magnetic tunnel junction device was integrated
with the TIs, where the 100% tunneling magnetoresistance (TMR) ratio and the ultralow
switching current density of 105 Acm-2 were achieved at the same time, indicating the great
potential of TI-based SOT-MRAM.
Second, to further reduce the energy and improve the speed of SOT devices, we use theferrimagnetic GdFeCo [5], where the SOT effective field is proportional to 1/Ms and thus issignificantly enhanced near the magnetic compensation point (Ms = 0) [6]. To demonstrate
the speed performance, a photoconductive Auston switch in a ferrimagnetic GdFeCo device
was used and a train of 1-ps electric pulses were generated by a THz optical source. Efficientswitching of the magnetization states between the up and down states, from which an over
50 GHz magnetic resonance frequency indicates tens of picosecond switching speed.
Furthermore, by carefully tuning the magnetic anisotropy and interfacial Dzyaloshinskii–
Moriya interaction (DMI) in BiSbTe/GdFeCo, a topologically-protected magnetic skyrmion
phase was observed, where the antiferromagnetically-coupled skyrmion lattices weredetected by the element-resolved scanning transmission X-ray microscope (STXM) for Gd andFe elements [7].
For SOT devices with perpendicular magnetic anisotropy, breaking the inversion symmetry isneeded to achieve deterministic SOT switching. Often, an external in-plane field is used forthis purpose. We will discuss the use of different kinds of symmetry breaking methods toachieve deterministic switching. We report the use of magnetization gradient in ferrimagnetic
GdFeCo layers to create SOT-induced spin textures, where the chiral symmetry is broken by
DMI, leading to the deterministic SOT switching [8].

43Lastly, voltage-controlled magnetic anisotropy (VCMA) can further reduce the energy of
spintronic devices from 100 fJ/bit to below 1 fJ/bit [9]. The integration of SOT with VCMA
may further improve the performance. However, two major challenges need to be resolved
for realizing high density integration in order to achieve high marketing-level applications: ahigh TMR (on off ratio) >1000% ratio is needed; and a large VCMA coefficient of >1000 (fJ V-1
m-1) will greatly improve the scaling of device density. Recent work in 2-dimentional (2D)
magnetic materials has demonstrated a TMR of over 10000% at 4 K [10], where increasing
the working temperature to room temperature will be a significant step for practicalapplications. Likewise, the integrating SOT with VCMA will give further improvement of
performance.

Figure 1. a, Schematic of a topological insulator/ferrimagnet heterostructure, i.e.,(BiSb)2Te3/Gdx(FeCo)1-x. b, SOT effective field χSOT and saturation magnetization Ms as afunction of the Gd concentration. c, Antiferromagnetically-coupled skyrmion lattices for Gd
and Fe elements measured by scanning transmission X-ray microscopy (STXM).

Figure 2. Schematic of chiral symmetry breaking showing that different chirality direction(clockwise or anticlockwise) gives rise to deterministic spin-orbit torque (SOT) switching. For
the system with a magnetization gradient, SOT exerts the non-collinear spin textures, where
the DMI breaks the chiral symmetry and thus leads to the deterministic SOT switching.

44References:[1] I. Žutić, J. Fabian and S. Das Sarma, Reviews of Modern Physics 76 (2), 323-410 (2004).
[2] S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes,
A. Y. Chtchelkanova and D. M. Treger, Science 294 (5546), 1488-1495 (2001).
[3] L. Liu, C.-F. Pai, Y. Li, H. W. Tseng, D. C. Ralph and R. A. Buhrman, Science 336 (6081), 555558 (2012).
[4] H. Wu, P. Zhang, P. Deng, Q. Lan, Q. Pan, S. A. Razavi, X. Che, L. Huang, B. Dai, K. Wong, X.
Han and K. L. Wang, Physical Review Letters 123 (20), 207205 (2019).
[5] I. Radu, K. Vahaplar, C. Stamm, T. Kachel, N. Pontius, H. A. Dürr, T. A. Ostler, J. Barker, R.
F. L. Evans, R. W. Chantrell, A. Tsukamoto, A. Itoh, A. Kirilyuk, T. Rasing and A. V. Kimel,
Nature 472 (7342), 205-208 (2011).
[6] H. Wu, Y. Xu, P. Deng, Q. Pan, S. A. Razavi, K. Wong, L. Huang, B. Dai, Q. Shao, G. Yu, X.
Han, J.-C. Rojas-Sánchez, S. Mangin and K. L. Wang, Advanced Materials 31 (35), 1901681(2019).
[7] H. Wu, F. Groß, B. Dai, D. Lujan, S. A. Razavi, P. Zhang, Y. Liu, K. Sobotkiewich, J. Förster,M. Weigand, G. Schütz, X. Li, J. Gräfe and K. L. Wang, Advanced Materials 32 (34), 2003380(2020).
[8] H. Wu, J. Nance, S. A. Razavi, D. Lujan, B. Dai, Y. Liu, H. He, B. Cui, D. Wu, K. Wong, K.
Sobotkiewich, X. Li, G. P. Carman and K. L. Wang, Nano Letters (2020).
[9] X. Li, A. Lee, S. A. Razavi, H. Wu and K. L. Wang, MRS Bulletin 43 (12), 970-977 (2018).
[10]
T. Song, X. Cai, M. W.-Y. Tu, X. Zhang, B. Huang, N. P. Wilson, K. L. Seyler, L. Zhu, T.
Taniguchi, K. Watanabe, M. A. McGuire, D. H. Cobden, D. Xiao, W. Yao and X. Xu, Science
360 (6394), 1214-1218 (2018).

Biography
Dr. Kang L. Wang is currently a Distinguished Professor and the Raytheon Chair Professor
in Physical Science and Electronics at the University of California, Los Angeles (UCLA). He isaffiliated with the Departments of ECE, MSE, and Physics/Astronomy. He received his M.S.
and Ph.D. degrees from the Massachusetts Institute of Technology and his B.S. degree from
National Cheng Kung University (Taiwan). He is a Guggenheim Fellow, Fellows of American
Physical Society and IEEE, and a Laureate of Industrial Technology Research Institute of
Taiwan. He is an Academician of Academia Sinica. His awards include the IUPAP Magnetism
Award and Néel Medal, the IEEE J.J. Ebers Award for electron devices, SRC TechnicalExcellence Award, the Pan Wen-Yuan Award, Chinese American History Makers Award, andothers. He served as the editor-in-chief of IEEE TNANO, editor of Artech House, editors for J
of Spins and Science Advances, and other publications. His research areas include topologicalinsulators – condensed matters and physics; spintronics/magnetics and nonvolatileelectronics; quantum information and computing; nanoscale physics and materials;
molecular beam epitaxy.

45

Tutorial TTUA2-3
H.-S. Philip Wong, Professor of Electrical Engineering,
Stanford University, USA“In- and Near-Memory Computing Using 2D/3D Resistive
Memories”

Abstract：The growing demands of ubiquitous artificial intelligence (AI) applications call for
new energy-efficient hardware solutions that can offer sustainable benefits with technology,architecture, and system advancements. As illustrated in Figure 1, we envision that 3D
integrated systems with tight integration of logic and memory, through end-to-end
technology-system co-optimization, will be the key enabler going forward [1]. Particularly,
high-density, on-chip non-volatile memories (NVMs) play an important role [2], enabling
three major features: (1) high-capacity, high-bandwidth on-chip data storage, (2) nearmemory computing capabilities with domain-specific accelerators on chip, (3) in-memorycomputing capabilities utilizing unique device properties. In this tutorial, we will discuss on
the essential characteristics of in-memory and near-memory computing using 2D and 3Dvertical resistive RAM (RRAM).
We start with a high-level overview and discussion of both application and technology trends
towards energy-efficient AI hardware. Then, at device level, we will focus on the RRAM
technologies and provide backgrounds from device physics and operations to 3D structuresand integration. At circuit and architecture level, we will dive into the basic ideas, designs,
and system analysis of leveraging RRAM for near-memory and in-memory computing, using
various case studies.
The new design space created by the logic-memory integration with RRAMs and other NVMs
on chip can provide new insights and augment domain-specific accelerator optimizations
where computations need to be close to memories [3]. Utilizing the device-level and circuitlevel properties allows us to move neural network computations into RRAMs [4], and further
support brain-inspired learning models with native compute kernels in 3D structures [5].

46Figure 1. End-to-end technology-system co-optimization with on-chip NVM (e.g., RRAM) forenergy-efficient machine intelligence.
References:[1] M.M. Aly, et al., “The N3XT approach to energy-efficient abundant-data computing,” Proc.
IEEE, 2018[2] H.-S. P. Wong, et al., “Memory leads the way to better computing,” Nature Nanotech.,2015[3] H. Li, et al., “On-chip memory technology design space explorations for mobile deep neuralnetwork accelerators,” DAC, 2019[4] W. Wan et al., “A 74 TMACS/W CMOS-RRAM neurosynaptic core with dynamicallyreconfigurable dataflow and in-situ transposable weights for probabilistic graphical models,”
ISSCC, 2020
[5] H. Li., et al., “Hyperdimensional computing with 3D VRRAM in-memory kernels: Devicearchitecture co-design for energy-efficient, error-resilient language recognition,” IEDM, 2016
H.-S. Philip Wong

Biography
H.-S. Philip Wong is the Willard R. and Inez Kerr Bell Professor in the School of Engineering
at Stanford University. He joined Stanford University as Professor of Electrical Engineering in
September, 2004. From 1988 to 2004, he was with the IBM T.J. Watson Research Center.
From 2018 to 2020, he was on leave from Stanford and was the Vice President of Corporate
Research at TSMC, the largest semiconductor foundry in the world. Since 2020, he has been
the Chief Scientist of TSMC. He is a Fellow of the IEEE and received the IEEE Electron Devices
Society J.J. Ebers Award for “pioneering contributions to the scaling of silicon devices andtechnology.” He has held leadership positions at major multi-university research centers of
the National Science Foundation and the Semiconductor Research Corporation. He is thefounding Faculty Co-Director of the Stanford SystemX Alliance – an industrial affiliate program
focused on building systems, and the faculty director of the Stanford Non-Volatile Memory
Technology Research Initiative (NMTRI).

47

Heterogeneous Integration Roadmap (HIR) Workshop(WTUA4)9:00 am – 12:30 pm
Thursday, April 8, 2021
On-site participation: ShuYun Hall
The Heterogeneous Integration Roadmap (HIR) is a roadmap to the future of electronics
identifying technology requirements and potential solutions. The primary objective is tostimulate pre-competitive collaboration between industry, academia and government toaccelerate progress. The roadmap offers professionals, industry, academia and research
institutes a comprehensive, strategic forecast of technology over the next 15 years. The HIR
also delivers a 25-year projection for heterogeneous integration of Emerging Research
Devices and Emerging Research Materials with longer research-and-development timelines.
The HIR is sponsored by three IEEE Societies (Electronics Packaging Society, Electron Devices
Societry & Photonics Society) together with SEMI and ASME EPPD.
This HIR workshop @EDTM2021 will feature seven selected topics from the HIR chapters
including an overview presentation. The purposes for the HIR workshop at EDTM are tofeature interest & stimulate collaboration for the HIR stakeholders around the world.

48

HIR Workshop Organizing Committee
Chair: William Chen, Co-Chairs: Subramanian Iyer, WR Bottoms, Ravi Mahajan

Agenda09:00 am – 09:05 am

Welcome

EDTM & HIR

09:05 am – 09:30 am

HIR Overview: William Chen, WR Bottoms & Ravi Mahajun

09:30am – 09:55 am

Automotive Electronics: Urmi Ray & Rich Rice

09:55 am – 10:20 am

SiP & Module: R. Aschenbrenner, Klaus Pressel, Erik Jung

10:20 am – 10:45 am

MEMS & Sensor Integration: Shafi Saiyed & MaryAnn Mahar

10:45 am – 11:10 am

Simulation & Co-Design: Christopher Bailey & Xuejun Fan

11:10 am – 11:35 am

Reliability: Abhijit Dasgupta, Richard Rao, Shubhana Sahasrabudha

11:35 am – 12:00 pm

Integrated Power Electronics: Patrick McCluskey & Douglas Hopkins

12 :00 pm – 12:30 pm

Panel Session: Moderators: Subramanian Iyer & William Chen

Workshop Speakers & Panelists from HIR Techncial Working Groups:
HIR Overview Chapter: William (Bill) Chen (ASE) & WR (Bill) Bottoms (HIR & 3MTS, Chairman)

Automotive Technical Working Group: Chair & Co-Chair Urmi Ray (Consultant) & Rich Rice (ASE SVPBusiness Development)

SiP & Module Technical Working Group: Chair & Co-Chairs Rolf Aschenbrenneer (IZM), Klaus Pressel(Infineon), Erik Jung (IZM)

49

MEMS & Sensor Integration Technical Working Group: Chair & Co-Chair Shafi Saiyed (Analog Devices) &MaryAnn Maher (CEO, Soft MEMS)

Simulation Technical Working Group: Chair & Co-Chair Christopher Bailey (Greenwich University), Xuejun
Fan (Lamar Uniuversity)

Reliability Technical Working Group: Chair & Co-Chairs Abhijit Dasgupta (U Maryland), Richard Rao(Inphi), Shubhana Sahasrabudha (Intel)

Integrated Power Electronics Technical Working Group: Chair & Co-Chair Patrick McCluskey (U Maryland)
Douglas Hopkins (NC State)

Panel Session Moderators:
Subramanian Iyer (UCLA) & William Chen (HIR & ASE)

50

Short Course 1 (STUP1)“Advanced Memories and Emerging Applications”
Thursday, April 8, 2021
13:50–17:20 ShuFeng Hall
Moderator: Qi Xiang, Navakanta Bhat

STUP1-1: 2:00 pm
Computing-in-memory design for general neural networks inference
Shaodi Wang, Founder/CEO of WITINMEM, Beijing, China

STUP1-2: 3:10 pm
Emerging Device Technologies for Neuromorphic Computing and Machine
Learning
Damien Querlioz, Université Paris-Saclay, CNRS, France

STUP1-3: 4:20 pm
RRAM Based Computing-In-Memory
Qi Xiang, CTO of Xiamen Industrial Technology Research Institute Co., LTD, China

51

Short Course STUP1-1
Shaodi Wang, Beijing Zhicun (WITIN) Technology Co. Ltd,
China
“Computing-in-memory design for general neuralnetworks inference”
Abstract ： Neural Networks (NNs) have been widely employed in modern artificial
intelligence (AI) systems due to their unprecedented capability in classification, recognitionand detection. However, the massive data communication between the processing units andthe memory has been proven to be the main bottleneck to improve the efficiency of NNs
based hardware. Furthermore, the significant power demand for massive addition andmultiplication limits its adoption at the edge devices. In addition, the cost is another major
concern for an edge device. Therefore, an edge neural processing chip with simultaneous low
power, high performance, low cost is in urgent need for the fast-growing AI-and-IoT (AIoT)
market. In this talk, we will introduce an ultra-low-power neural processing SoC chip in 40nm
with computing-in-memory technology. We have designed, fabricated, and tested this chip
based on 40nm eFlash technology. It solves the data processing and communication
bottlenecks in NNs with computing-in-memory technology. Furthermore. It combines classic
digital solution together with the analog computing-in-memory macro to achieve 12-bit highprecession computing. To enable a sub-mW system in AIoT applications, a Risc-V microprocessor with DSP instruction was designed with dynamic-voltage-and-frequency-scaling(DVFS) to adapt with various low-power and real-time computing tasks. The chip supports
multiple NNs including DNN, TDNN, and RNN for different applications, e.g., smart voice, andhealth monitoring.

Biography
Shaodi received his B.S. degree from Peking University in 2011.and the Ph.D. degree inelectrical engineering from UCLA in 2017. He founded WITINMEM Co. Ltd in 2017, andcurrently serves as the CEO of WITINMEM and is dedicated to developing chips withcomputing-in-memory technology. Shaodi published 20+ journal and conference papers andapplied over 50 patents. He also served as reviewers and TPC in several IEEE and ACM journals
and conferences.

52

Short Course STUP1-2
Damien Querlioz, Université Paris-Saclay, CNRS, France“Emerging Device Technologies for Neuromorphic
Computing and Machine Learning”

Abstract：In recent years, Artificial Intelligence (AI) has progressed to an astonishing level
through the development of algorithms known as deep neural networks. Nevertheless, AI has
to face a challenge: its considerable energy consumption, orders of magnitudes higher thanthe brain on similar tasks. Neuromorphic computing aims at designing electronic systems
whose operating principles are to some extent inspired by the brain, to reduce the energy
consumption of AI. In this tutorial, we will elucidate why the brain is more energy-efficientthan current AI. This will teach us fundamental lessons on the design of neuromorphic
systems, which should avoid the von Neumann bottleneck by closely associating
computational units (artificial neurons) and memory units (artificial synapses). We will seethat one of the biggest challenges, however, is the inadequacy of established memory
technologies. We will then study how resistive memories, phase change, and spin torquememories, which naturally resemble synapses, can by contrast provide a solution. We will seethat neuromorphic systems are sometimes less demanding in terms of device properties thanconventional systems, which can allow using devices in a more optimal fashion. We will study
the two main applications of neuromorphic hardware (inference and learning hardware), andshow that they feature very different device requirements. We will also compare two visions
for neuromorphic computing: the AI approach, which can bring immediate applications, andthe longer-term neuroscience-inspired approach. We will see that both approaches do notcall for the same electron device work. Finally, we will study recent developments that use
the physics of conductive bridge and spin-torque devices, directly for computing, as well on
3-D integrated neuromorphic devices.

Biography
Damien Querlioz is a CNRS Researcher at the Centre de Nanosciences et deNanotechnologies of Université Paris-Saclay. His research focuses on novel usages of
emerging non-volatile memory and other nanodevices, in particular relying on inspirations
from biology and machine learning. He received his predoctoral education at Ecole Normale
Supérieure, Paris and his PhD from Université Paris-Sud in 2009. Before his appointment at
CNRS, he was a Postdoctoral Scholar at Stanford University and at the Commissariat al'Energie Atomique. Damien Querlioz is the coordinator of the interdisciplinary INTEGNANO

53

research group, with colleagues working on all aspects nanodevice physics and technology,
from materials to systems. He is a member of the bureau of the French Biocomp research
network, and a management committee member of the European MEMOCIS COST action. He
has coauthored one book, nine book chapters, more than 100 journal articles and conference
proceedings, and given more than 50 invited talks at national and international workshops
and conferences. In 2016, he was the recipient of an ERC Starting Grant to develop theconcept of natively intelligent memory. In 2017, he received the CNRS Bronze medal. He has
also been a co-recipient of the 2017 IEEE Guillemin-Cauer Best Paper Award and of the 2018
IEEE Biomedical Circuits and Systems Best Paper Award.

54

Short Course STUP1-3
Qi Xiang, Xiamen Industrial Technology ResearchInstitute Co., Ltd., China“RRAM Based Computing-In-Memory”

Abstract： Artificial intelligence (AI) technologies, running state-of-the-art deep learning(DL) algorithms, demand significantly high computing power and energy efficiency.
Computing power and energy efficiency for conventional computing hardware based on von
Neumann architecture are limited by the so called “memory wall” problem due to physicalseparation of processing and memory units. Computing-In-Memory (CIM) based on emerging
non-volatile memory devices, such as resistive random access memory (RRAM), is an
emerging paradigm for hardware acceleration of AI workloads, and has potential tosignificantly increase computing power and energy efficiency for a DL accelerator. In thisshort course, we will focus on RRAM based CIM technology. We will first introduce theprinciples of RRAM based CIM technology. We will talk about the performance requirementof analog RRAM (or memristor) device. RRAM cell material system selection and processintegration with an advanced logic CMOS process flow will be discussed. Modeling of analog
RRAM device will be addressed. Co-design and co-optimization of device, circuit, architecture,
and algorithm for AI accelerator chips will be discussed. We will summarize key challenges in
CIM chip design and manufacturing with regards to the device non-idealities, analog-to-digitalconversion, and process variations. State-of-the-art CIM-based prototype AI chips will besurveyed.

Biography
Dr. Qi Xiang is currently the Chief Technology Officer (CTO) of Xiamen Industrial
Technology Research Institute Co., LTD (XITRI). Prior to joining XITRI, Dr. Xiang worked at Xilinx,
GlobalFoundres, Altera (now Intel), and AMD in various engineering and management
positions, including Director of Foundry Engineering at Xilinx, Director of DTCO and Fellow at
GlobalFoundries, Senior Manager and Principal Engineer of Technology Development at
Altera, and Manager of New Materials & Integration at AMD. He has more than 20 years ofexperience in semiconductor technology development and product manufacturing, from IDM,
to design house, to foundry, and from process R&D, to foundry interface, to foundry design
enablement. Dr. Xiang holds more than 200 US patents, and authored more than 70 technicalpapers. He served as a technical program committee member for various technicalconferences, including IEDM, ICSICT, ICSI, DesignCon. He also served as a working group55

member for ITRS and IRDS. He obtained BS, MS, and Ph.D. degrees in EE from Xi’an Jiaotong
University. He worked as a post doctoral fellow in University of California, Los Angeles (UCLA)
and Tsinghua University, Beijing, China.

56

Short Course 2 (STUP2)“Quantum Computing Technologies”
Thursday, April 8, 2021
13:50–17:20 ShuShan Hall
Moderator: Qiang Zhou, Jong-Hyun Ahn

STUP2-1: 2:00 pm
Cryo-CMOS for Quantum Computing
Edoardo Charbon, EPFL, Switzerland

STUP2-2: 3:10 pm
Understanding quantum computing by quantum algorithms
Lvzhou Li, Sun Yat-sen University, China

STUP2-3: 4:20 pm
Quantum computing using superconducting quantum coherence devices
Yuxi Liu, Tsinghua University, China

57

Short Course STUP2-1
Edoardo Charbon, EPFL, Switzerland“Cryo-CMOS for Quantum Computing”

Abstract： Quantum computing holds the promise to solve intractable problems using
processors that exploit quantum physics concepts, such as superposition and entanglement.
The core of a quantum processor is generally an array of qubits that need to be controlled
and read out by a classical processor. This processor operates on the qubits with nanosecond
latency, several millions of times per second, with tight constraints on noise and power. Thisis due to the extremely weak signals involved in the process that require highly sensitive
circuits and systems, along with very precise timing capability. We advocate the use of CMOS
technologies to achieve these goals, whereas the circuits will be operated at deep-cryogenic
temperatures. We believe that these circuits, collectively known as cryo-CMOS control, will
make future qubit arrays scalable, enabling a faster growth in qubit count. In the lecture, thechallenges of designing and operating complex circuits and systems at 4K and below will beoutlined, along with preliminary results achieved in the control and read-out of qubits by ad
hoc integrated circuits that were optimized to operate at low power in these conditions. The
talk will conclude with a perspective on the field and its trends.

Biography
Edoardo Charbon (SM’00 F’17) received the Diploma from ETH Zurich, the M.S. from the
University of California at San Diego, and the Ph.D. from the University of California at
Berkeley in 1988, 1991, and 1995, respectively, all in electrical engineering and EECS. He has
consulted with numerous organizations, including Bosch, X-Fab, Texas Instruments, Maxim,
Sony, Agilent, and the Carlyle Group. He was with Cadence Design Systems from 1995 to 2000,
where he was the Architect of the company's initiative on information hiding for intellectual
property protection. In 2000, he joined Canesta Inc., as the Chief Architect, where he led thedevelopment of wireless 3-D CMOS image sensors. Since 2002 he has been a member of thefaculty of EPFL. From 2008 to 2016 he was with Delft University of Technology’s as full
professor and Chair of VLSI design. He has been the driving force behind the creation of deepsubmicron CMOS SPAD technology, which is mass-produced since 2015 and is present intelemeters, proximity sensors, and medical diagnostics tools. His interests span from 3-Dvision, LiDAR, FLIM, FCS, NIROT to super-resolution microscopy, time-resolved Raman
spectroscopy, and cryo-CMOS circuits and systems for quantum computing. He has authored58

or co-authored over 350 papers and two books, and he holds 23 patents. Dr. Charbon is adistinguished visiting scholar of the W. M. Keck Institute for Space at Caltech, a fellow of the
Kavli Institute of Nanoscience Delft, a distinguished lecturer of the IEEE Photonics Society,and a fellow of the IEEE.

59

Short Course STUP2-2
Lvzhou Li, Sun Yat-sen University, China“Understanding quantum computing by quantum
algorithms”

Abstract：The fundamental reason why quantum computing attracts so much attention isthat it has powerful parallel computing ability, which can efficiently solve some problems thatare quite difficult for classical computers. For example, Shor’s algorithm can solve thefactorization problem in polynomial time, which thus poses a great threat to RSA
cryptography. However, the parallel computing power of quantum computation is notdirectly available since the ingenious algorithm design centered on the target problem isrequired. This talk will introduce the basic principles, development history and typical onesof quantum algorithms so that the audience can have some basic understanding of how
quantum computing can speed up problem solving.

Biography
Lvzhou Li is a professor at Institute of Quantum Computing and Computer Science Theory,
School of Computer Science and Engineering, Sun Yat-Sen University. He obtained Ph.D in
Computer Science from Sun Yat-sen University in 2009. His researches focus on quantum
computing models, algorithms, and complexity. He has published more than 60 papers andone monograph. He is a distinguished member and distinguished lecturer of China Computer
Federation (CCF).

60

Short Course STUP2-3
Yuxi Liu, Institute of Microelectronics, Tsinghua
University, China“Quantum computing using superconducting quantum
coherence devices”
Abstract ： There are various model systems, which may be used to realize quantum
information processing. In the past 20 years, significant progress has been made insuperconducting quantum circuits, which provide a platform to manipulate microwave
photons and implement quantum information processing. This talk will introduce several
superconducting quantum coherence devices, and show you how to design basic model for
quantum computing using these coherence devices. The recent progress of thesuperconducting quantum computing is also summarized. Finally, I will present our recent
research results on developing superconducting quantum circuit models for quantum
computing and simulations.
References[1] X. Gu, A. F. Kockum, A. Miranowicz, Y. X. Liu, F. Nori, Phys. Rep. 718-719, 1 (2017).
[2] W. Nie and Y. X. Liu, Phys. Rev. Research 2, 012076(R) (2020).
[3] W. Nie, Z. H. Peng, F. Nori, and Y. X. Liu, Phys. Rev. Lett. 124, 023603 (2020).
[4] Y. J. Zhao, X.W. Xu, H. Wang, Y. X. Liu, and W. M. Liu, Phys. Rev. A 102, 053722 (2020)

Biography
Yu-xi Liu is a Professor at the Institute of Microelectronics, Department of Micro- and Nanoelectronics, Tsinghua University of China. He received his Ph.D. degree from the Departmentof Physics, Peking University in 1998. From 1998 to 2000, he was a Postdoctoral Researcher
at the Institute of Theoretical Physics, the Chinese Academy of Sciences, China. From 2000 to
2002, he was a JSPS Postdoctoral fellow at the Graduate University for Advanced Studies(SOKENDAI), Japan. From 2002 to 2009, he was a research scientist in the Institute of Physicaland Chemical Research (RIKEN), Japan. Since 2009, he has been a full Professor at Tsinghua
University. He is an expert of superconducting quantum devices and solid-state quantum
computing theories. His research interests include superconducting quantum devices andquantum information processing, hybridization of superconducting quantum devices withphotonic/phononic devices, quantum control theory, and quantum artificial intelligence. He
has made several contributions to superconducting quantum coherence devices andquantum computing, and published about 140 journal papers, including Nature Photonics (3),Phys. Rep. (2), Phys. Rev. Lett. (13), Phys. Rev. A/B/E/Research/Applied (105), and otherjournals.

61

Short Course 3 (STUP3)“Advanced Processing and Manufacturing”
Thursday, April 8, 2021
13:50–17:20 ShuYun Hall
Moderator: Wei-Min Gao, Udayan Ganguly

STUP3-1: 2:00 pm
Layer transfer technology of post-Si materials for monolithic 3D integration
Tatsuro Maeda, National Institute of Advanced Industrial Science and Technology, Japan

STUP3-2: 3:10 pm
Device/Process Technology Challenges for CMOS System Evolution
Digh Hisamoto, Hitachi, Japan

STUP3-3: 4:20 pm
EUV lithography and its applications to logic and memory devices
Wei-Min Gao, ASML China

62

Short Course STUP3-1
Tatsuro Maeda, National Institute of Advanced Industrial
Science and Technology, Japan“Layer transfer technology of post-Si materials formonolithic 3D integration”
Abstract：Monolithic 3D integration has emerged as a promising technological solution forhigh density, high performance, and multi-functional integrated circuits. To enhance theperformance and expand the functionality of current Si-based semiconducting platforms, thelayer transfer technology of post-Si materials, such as Ge and III-V semiconductors onto Si
substrates has attracted a lot of attention. Key challenges are how to maintain the material
quality of transferred layers from donor wafer, and how to fabricate high-performancedevices under low-thermal budget processes on Si. In this talk, we discuss the layer transfer
technology for integrating Ge and III-V devices and their applicability for building the
emerging monolithic 3D devices.

Biography
Dr. Tatsuro Maeda is Research Manager at National Institute of Industrial Science andTechnology (AIST), Ibaraki, Japan. He received Ph. D. degree in material science from Tokyo
Institute of Technology in Japan in 1996. In 1996, he joined the Electron Device Division,
Electrotechnical Laboratory, Ibaraki, Japan where he has been engaged in the research on the
fabrication and the characterization of ultrasmall SOI-MOSFETs, nano-scale Si-based devices,and single electron transistors for future CMOS components. In 2001, he joined AIST as asenior researcher. Now he belongs to Device Technology Research Institute at AIST. His
current research interests include heterogeneous integration of post-silicon devices such as
SiGe, Ge, and III-V materials onto Si LSI to expand the functionality of current Si CMOS
technology. He has authored or co-authored over 100+ publications and patents related tonanoelectronics research fields.

63

Short Course STUP3-2
Digh Hisamoto, Research & Development Group, Hitachi,Ltd., Japan“Device/Process Technology Challenges for CMOS System
Evolution”
Abstract：Triggered by the introduction of FinFET, the evolution of device structure has
been actively considered. By considering the history of CMOS device developments so far,here, we will discuss the direction of device evolution and explore the features required for
future devices. Due to the system / architecture requirements, the input method functionality
plays an important role in determining the device structure. Based on these, we will review
the current challenges of device and process technologies.

Biography
Digh Hisamoto received the B.S., M.S. degrees in reaction chemistry and Ph.D. degree inelectronic engineering from the University of Tokyo, Tokyo, Japan, in 1984, 1986, and 2003,
respectively.
In 1986, he joined Central Research Laboratory, Hitachi, Ltd., Tokyo, where he has beenworking on ULSI device physics and process technologies. He developed scaled CMOS devices
and memory devices including DELTA (fully depleted lean-channel transistor), the originalmodel of the FinFET. From 1997 to 1998, he was a Visiting Industrial Fellow at the Universityof California, Berkeley, where he created the first FinFET.
Since 2000, he has developed embedded non-volatile Flash memories using split-gate
MONOS charge-trapped technology. Currently, he has expanded the research interests into
RF devices, tunnel FETs, wide bandgap semiconductor power devices, quantum sensing
devices, and quantum computing devices.
He has served as a committee member of International Conference on Solid State Devices
and Materials (SSDM), International Electron Devices Meeting (IEDM) and VLSI Symposia. And
also, he served as Director of Japan Applied Physics (JSAP) and assigned to Visiting Professorof School of Engineering, Tokyo Institute of Technology.
Dr. Hisamoto is Fellow of IEEE and JSAP. Currently, he is Technology Advisor, Research andDevelopment Group, Hitachi, Ltd.

64

Short Course STUP3-3
Wei-Min Gao, ASML, China“EUV lithography and its applications to logic andmemory devices”

Abstract： This course will cover the basic theory of EUV lithography, the history andpresent status of EUV lithography; It will explain the applications of EUV lithography to bothadvanced logic and memory processes in high volume manufactory; it will also discuss theextension of 0.33NA EUV (low k1 EUV) and the future high NA EUV lithography.

Biography
Weimin Gao received his bachelor’s degree from Zhejiang University, China and obtained
Ph.D. in physics from KU Leuven, Belgium. He joined ASML in 2018 as a technical director in
its Technology Development Center. Prior to joining ASML, he served as the Synopsys
assignee at imec for over 10 years. Dr. Gao is an expert in advanced optical lithography withmore than 19 years of R&D experience. He has participated in the lithographic developmentof multiple generations of advanced CMOS technology. His technical expertise covers a wide
range of lithographic fields including the process development, advanced imaging, RETs,
modeling, OPC, reticle, DTCO, and metrology. For the past 10 years, his research activities has
focused on the development of EUV lithography and he is currently working on EUV extension
and enabling technologies including high-NA EUV lithography. Dr. Gao has over 100
publications in various international journals and conferences and has given invited
presentations at many international conferences.

65

Short Course 4 (STUP4)“Ultra/Wide Bandgap Power Electronics”
Thursday, April 8, 2021
13:50–17:20 ShuJin Hall
Moderator: Mengyuan Hua, Shaibal Mukherjee

STUP4-1: 2:00 pm
Integration with GaN-on-Si Power HEMT platform
Kevin J. Chen, Hong Kong University of Science and Technology, Hong Kong, China

STUP4-2: 3:10 pm
Energy efficient power switches with Gallium Nitride technology
Srabanti Chowdhury, Stanford University, California, USA

STUP4-3: 4:20 pm
Element Technology for Next Generation High- to Ultra-High Voltage SiC Power
DeviceYoshiyuki Yonezawa, AIST, Japan66

Short Course STUP4-1
Kevin J. Chen, Hong Kong University of Science andTechnology, Hong Kong, China“Integration with GaN-on-Si Power HEMT platform”

Abstract：Group-III/nitride semiconductors have exhibited strong capability and flexibility
informing large-area heterojunctions (e.g. AlGaN/GaN) with high quality and high uniformity
Using epitaxial growth techniques. These heterojunctions yield polarization-induced
highmobility 2DEG channel that forms the basis of GaN HEMT, which is currently thedominant technology platform for commercial applications, such as high-frequency power
amplifiers for wireless base-stations and power switching devices for compact power
conversions. The GaN HEMT structure is planar in nature, with the inherent benefit of highdensity integration that can be utilized to increase functionality, optimize performance andimprove reliability. An immediate beneficiary of such an integration is the GaN powerswitching components currently being commercialized using advanced 6- or 8-inch GaN-onSi power HEMT technology. The parasitic inductances from the interconnection bonding wires
and PCB traces often create the bottleneck in exploiting the full potential of GaN powerdevices switching at high frequencies, since they could induce voltage spikes/oscillations that
may lead to various reliability issues. Large gate voltage spikes could degrade the gatejunction, as the gate drive voltage window of the commercial p-GaN gate power HEMTs ismuch narrower than Si and SiC MOSFETs. The GaN power transistors also have a relatively
low VTH and are likely to suffer false turn-on. By monolithically integrating gate driving
circuits with the power switch, parasitic inductance between gate driver and the powerdevice can be greatly reduced to obtain cleaner gate driving signals and more robust
switching characteristics. Furthermore, the integration of core power components with
peripheral devices enables incorporation of functionality/reliability enhancement blocks,
such as on-chip protection and sensing modules. The development of GaN power integration
technology based on a commercially available pGaN gate HEMT platform will be reviewed
and discussed. An integrated gate driving IC will be presented as an example of practicalimplementation. By adopting a bootstrap unit, the integrated gate driver enables rail-to-rail
driving capability and ultrafast switching with clean waveforms and enhanced gate reliability.
From power IC design point of view, the unique dynamic VTH of the voltage-driven p-GaN
power transistors and the corresponding SPICE model will be introduced, and its impact on
the GaN power IC design. The prospects for future GaN power IC development will also be
discussed, including multi-functional GaN power devices, GaN CMOS technology.

67

Biography
Prof. Kevin J. Chen received his B.S. degree from Peking University, China in 1988, and
PhD degree from University of Maryland, College Park, USA in 1993. He has obtained industry
experience by conducting R&D work on III-V high-speed device technologies in NTT LSILaboratories, Japan and Agilent Technologies, USA. Prof. Chen joined Hong Kong Universityof Science and Technology (HKUST) in 2000, where he is currently a professor in the
Department of Electronic and Computer Engineering. Prof. Chen has more than 600
publications in international journals and conference proceedings. He has been granted 12
US patents on GaN electron device technologies. His research is currently focused on
developing wide-bandgap semiconductor device technologies for high-power and highfrequency applications. He is a Fellow of IEEE. He is a guest editor for the 2013 special issueof IEEE Transactions on Electron Device on “GaN Electronic Devices”. He is currently an editor
for IEEE Transactions on Electron Devices and has served as an editor for IEEE Transactions
on Microwave Theory and Techniques and Japanese Journal of Applied Physics.

68

Short Course STUP4-2
Srabanti Chowdhury, Stanford University, USA“Energy efficient power switches with Gallium Nitride
technology”

Abstract ： GaN technology is an ever-expanding topic of research and development,
proving its potential to solve several challenges in power conversion that cannot be addressedby Si. For instance, medium voltage (650-900V) devices using the HEMT configuration havebeen able to reduce form factor at the system level by driving circuits at higher frequencies(100KhZ-1Mhz) and eliminating heat sinks or reducing cooling requirements. This alone
sparked the interest in GaN research to save space, energy and ultimately cost of power
conversion. However, in power conversion the demand of high current from a single chip fora rated voltage is a standard need. Particularly when the market is favorable towards
electrification of cars and other means of transportations, GaN must expand its scope toprovide high power solutions with higher power density compared to Si, and even SiC. Verticaldevices have been the choice of power device engineers for economic use of the material andmaximum use of its physical properties (which allow highest possible blocking field, field
mobility, etc.). GaN vertical devices, therefore, carry all the advantages offered by verticalgeometry and are being explored increasingly with emphasis on material and device needs.
An overview of the recent achievements in vertical Gallium Nitride (GaN)-based powerelectronic devices will be presented with particular reference to a current aperture verticalelectron transistor (CAVET), MOSFETs an oxide, GaN interlayer FET (OGFET), Static Induction
Transistor (SIT), and high voltage diodes. We have done systematic study of several types ofvertical devices and compared their performances. Lateral HEMTs will be discussed and theircurrent issues will be elaborated with specific examples.
Prevalent opinion suggests GaN HEMTS are suitable for 650V, while vertical devices are moresuited for 1.2kV and up. In this tutorial I would build discuss the device performance for both
topologies and allude to the overall (most likely system-level, but also device-level) cost thatis an important metric for the successful commercialization of power deices. Finally, there
will be some discussion of device fundamentals that include the role of avalanche breakdown,
and likelihood of impact ionization of carriers in GaN power devices.

Biography
Srabanti Chowdhury (George and Ida Mary Hoover faculty fellow’19, Gabilan fellow ‘19)
is an associate professor of Electrical Engineering (EE), and Center Fellow, by courtesy, at the69

Precourt Institute for Energy at Stanford University. Her research focuses on wideband gap(WBG) materials and device engineering for energy efficient and compact system architecture
for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring
Diamond for various electronic applications. She received her B.Tech in India in Radiophysics
and Electronics (Univ. of Calcutta) and her M.S and PhD in Electrical Engineering from
University of California, Santa Barbara. She received the DARPA Young Faculty Award, NSF
CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young
Scientist award at the International Symposium on Compound Semiconductors (ISCS). She isa senior member of IEEE and an invitee by the NAE to the 2019 symposium on Frontiers ofEngineering. She received the Alfred P. Sloan fellowship in Physics in 2020. To date, her work
has produced over 5 book chapters, 85 journal papers, 100 conference presentations, and 26
issued patents. She leads the WBG-Lab and affiliated with System-X alliance at Stanford
University.

70

Short Course STUP4-3
Yoshiyuki Yonezawa, National Institute of Advanced
Industrial Science and Technology (AIST), Japan“Element Technology for Next Generation High- to UltraHigh Voltage SiC Power Device”
Abstract：In order to achieve the goal of zero greenhouse gas emissions and to meet the
expected explosive increase in electricity demand associated with ICT and the electrificationof vehicles, it will be necessary to introduce and control a large amount of renewable energy,
as well as to conserve energy in consumption. Under such circumstances, the role of powerelectronics and power device are becoming increasingly important in the energy value chain
from power transmission and distribution to energy consumption.
The evolution of power electronics has been supported by improvements in Si-IGBTs.
However, since the theoretical limit of Si has been reached, expectations for SiC devices are
increasing. Since SiC has a breakdown electrical field ten times higher than Si a blocking
voltage one order of magnitude higher with SiC compared to Si is expected using the samestructure.
In this short course, the current status of SiC power devices and issues such as forward
degradation and countermeasures are introduced. Furthermore, efforts to develop nextgeneration SiC superjunction MOSFET and ultra-high voltage SiC-IGBT elemental technologies
aiming at lower loss and higher breakdown voltage will be reported.

Biography
Yoshiyuki Yonezawa received his Ph.D. degree from Tokyo Institute of Technology, basedon his work in SiC power devices and solution growth of SiC crystal. From 1989 to 2013, he
was an engineer at Fuji Electric Co., Ltd., where he was engaged in research and development
in solid state laser system, hard disk media, dielectric thin films for DC/DC converter, and SiC
power devices, and led the SiC group. He was a visiting scholar at Stanford University from1996 to 1998. He joined National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Japan, in 2013 at Advanced Power Electronics Research Center. He iscurrently a principal research manager and his research involves SiC high voltage SJ-MOSFET,
ultra-high-voltage IGBTs and related fundamental technologies.

71Technical Sessions
Friday, April 9, 2021
13:30–15:10 ShuFeng Hall
Invited Session WE1P1: Materials Growth and Applications
Chair: Genquan Han, Xidian University
Co-Chair: Daniel Herr, University of North Carolina, Greensboro

WE1P1-1 13:30
Pushing the Limit of Lithography for Patterning Two-Dimensional Lattices in III-V
Semiconductor Quantum Wells (Invited talk)
N.A. Franchina Vergel1, C. Post2, F. Vaurette1, Y. Lambert1, D. Yarekha1, C. Coinon1, G. Fleury3, T.S. Kulmala4, T. Xu5, L.
Desplanque1, X. Wallart1, D. Vanmaekelbergh2, C. Delerue1, B. Grandidier1；1Univ. Lille, France,2Utrecht University, The
Netherlands, 3Univ. Bordeaux, France,4Heidelberg Instruments, Switzerland,5Shanghai University, China

WE1P1-2 13:50
Graphene Synthesis: From Single Crystalline Wafer to Edge Specific Nano-Ribbon(Invited talk)
Zengfeng Di, Tianru Wu, Haomin, Wang, Qingkai Yu, Xiaoming Xie; Shanghai Institute of Microsystem and Information
Technology, Chinese Academy of Sciences, China

WE1P1-3 14:10
Artificial Heterostructures Enabled by Remote Epitaxy (Invited talk)Jeehwan Kim; Massachusetts Institute of Technology, USA

WE1P1-4 14:30
Non-Volatile FETs with Amorphous (Al2O3, HfO2, ZrO2, Etc.) Gate Insulators (Invitedtalk)
Yan Liu, Yue Peng, Genquan Han; Xidian University, China

WE1P1-5 14:50
Silicon Nanocrystals: Fabrication, Physical Properties and Applications (Invited talk)
Ilya Sychugov; KTH Royal Institute of Technology, Sweden

72

Friday, April 9, 2021
13:30–15:10 ShuShan Hall
Session WE1P2: Hot carrier relaibility and Neuromorphic reliability
Chair: Runsheng Wang, Peking University
Co-Chair: Yuan Zhang, Amazon

WE1P2-1 13:30
Hot Carrier Degradation in Classical and Emerging Logic and Power Electronic
Devices: Rethinking Reliability for Next-Generation Electronics (Invited talk)Muhammad Ashraful Alam, Bikram Kishore Mahajan, Yen-Pu Chen; Purdue University, USA

WE1P2-2 13:50
Hot-Carrier-Induced Reliability Concerns for Lateral DMOS Transistors with SplitSTI Structures
Li Lu1, Ran Ye1, Siyang Liu1, Zhibo Yin1, Yuanchang Sang1, Weifeng Sun1, Wei Su2, Feng Lin2, Shulang Ma2, Yuwei Liu2;
1Southeast University,China, 2CSMC Technologies Corporation, China

WE1P2-3 14:10
Identifying Relaxation and Random Telegraph Noises in Filamentary Analog
RRAM for Neuromorphic Computing
Qi Hu1, Bin Gao1, Jianshi Tang1, Zhenqi Hao1, Peng Yao1, Yudeng Lin1, Yue Xi1, Meiran Zhao1, Jiezhi Chen2, He Qian1,Huaqiang
Wu1; 1Tsinghua University, China, 2Shandong University, China

WE1P2-4 14:30
Nonlinear Weight Quantification for Mitigating Read Disturb Effect on Multilevel
RRAM-Based Neural Network
Lindong Wu, Zongwei Wang , Zhizhen Yu, Yabo Qin, Qingyu Chen, Yimao Cai , Ru Huang; Peking University, China

WE1P2-5 14:50
Predicted static fatigue lifetime of silica optical interconnects: application of
Boltzmann-Arrhenius-Zhurkov (BAZ) model (Invited talk)
Ephraim Suhir; Portland State University, USA73

Friday, April 9, 2021
13:30–15:10 ShuYun Hall
Session WE1P3: Heterogeneous Integration
Chair: Yifan Guo, ASE
Co-Chair: Jian Cai, Tsinghua University

WE1P3-1 13:30
Heterogeneous Integration for Silicon Photonic Systems: Challenges andApproaches (Invited talk)John M. Dallesasse, John A. Carlson, Manaav Ganjoo, Leah Espenhahn; University of Illinois at Urbana-Champaign, USA

WE1P3-2 13:50
Effect of Leveler on Electrical Resistance and Microstructural of Electroplated
Copper After Heat Treatment
Lingyue Tan, Silin Han, Shuhui Chen, Chu Liang, Yunwen Wu, Huiqin Ling, Ming Li, Tao Hang; Shanghai Jiao Tong University,
China

WE1P3-3 14:10
Heterogenous Integration of InP DHBT and Si CMOS by 30μm Pitch Au-In
Microbumps
LiShu Wu1,2, JiaYun Dai1, Cheng Wei1, YueChan Kong1, TangShen Chen1, Tong Zhang2; 1Science and Technology on
Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute, China, 2Southeast University,
China

WE1P3-4 14:30
Simulation of fast room-temperature bonding by mechanical interlock
structure applied for 3D integration
Ziyu Liu, Yaomin Gong, Lin Chen, Qingqing Sun, David Wei Zhang; Fudan University, China

WE1P3-5 14:50
Low Temperature Packaging for Ion-Sensitive Organic Field Effect Transistor
Yixiao Tang, Wei Tang, Yukun Huang, Yawen Song, Bang Ouyang, Xiaojun Guo; Shanghai Jiao Tong University,
China

74

Friday, April 9, 2021
13:30–15:10 ShuJin Hall
Session WE1P4: New memories and in memory computing
Chair: Hangbing Lv, IMECAS
Co-Chair: Kai Ni, RIT

WE1P4-1 13:30
Ferroelectric field-effect transistors for the next-generation storage (Invited talk)
Cheol Seong Hwang; Seoul National University,Korea

WE1P4-2 13:50
Toward Energy-efficient, Cost-effective, and Variation-aware In-memory
Computing for Deep Learning Acceleration (Invited talk)Tuo-Hung Hou; National Chiao Tung University, China

WE1P4-3 14:10
Design Limits of In-Memory Computing: Beyond the Crossbar (Invited talk)
Gokul Krishnan1, Jubin Hazra2, Maximilian Liehr2, Xiaocong Du1, Karsten Beckmann2, Rajiv V. Joshi3, Nathaniel C. Cady2, Yu
Cao1; 1Arizona State University,USA, 2State University of New York Polytechnic Institute,USA, 3IBM T. J. Watson ResearchCenter Yorktown Heights,USA

WE1P4-4 14:30
Three-Orders Improvement of Endurance in Hafina Based MFS Capacitor Through
CF4 Plasma Pre-Treatment
Shuxian Lv1, 2, Yan Wang1, 2, Zhaomeng Gao1, 2, Zhiwei Dang1, 2, Pengfei Jiang1, 2, Peng Yuan1,2, Qing Luo1, 2, Shengjie
Zhao1, Hangbing Lv1, 2; 1Institute of Microelectronics of Chinese Academy of Sciences, China; 2University of Chinese
Academy of Sciences, China

WE1P4-5 14:50
A RRAM Based Max-Pooling Scheme for Convolutional Neural Network
Yaotian Ling, Zongwei Wang, Yunfan Yang, Zhizhen Yu, Qilin Zheng, Yabo Qin, Yimao Cai, Ru Huang; Peking
University, China

75

Friday, April 9, 2021
15:30–17:10 ShuFeng Hall
Session WE2P1: MEMS and Sensors
Chair: Jiahao Zhao, Tsinghua University
Co-Chair: Evelyn Wang, Massachusetts Institute of Technology

WE2P1-1 15:30
Piezoelectric Micromachined Ultrasonic Transducers for Range-Finding
Applications (Invited talk)David A. Horsley1,2, Richard J. Przybyla1, Stefon E. Shelton1, Fabian T. Goericke1, Benjamin E. Eovino1, Michael Alex1 , John
Logan1; 1Chirp Microsystems Corporation,USA, 2University of California, Davis, USA

WE2P1-2 15:50
Biaxially-Stretchable Kirigami-Patterned Mesh Structures for Motion Artifact-Free
Wearable Devices (Invited talk)
Hyo Chan Lee1, Ezekiel Y. Hsieh1,SungWoo Nam1,2; 1Department of Mechanical Science and Engineering, University of
Illinois at Urbana – Champaign, USA, 2Department of Materials Science and Engineering, University of Illinois at Urbana –Champaign, USA

WE2P1-3 16:10
Thermal Infrared Detector Sparse Array for NASA Planetary Applications(Invited talk)
M. Bulut Coskun1, Mina Rais-Zadeh1,2; 1California Institute of Technology,USA, 2University of Michigan, Ann Arbor, USA

WE2P1-4 16:30
Double-Deck Metal Solenoids 3D Integrated in Silicon Wafer for Kinetic Energy
Harvester
Nianying Wang1,2,3, Ruofeng Han1,3, Changnan Chen1,3, Jiebin Gu1,3, and Xinxin Li1,2,3; 1Shanghai Institute ofMicrosystem and Information Technology, Chinese Academy of Sciences, China, 2ShanghaiTech University, China,
3University of Chinese Academy of Sciences, China

WE2P1-5 16:50
A Novel Piston-Like Piezoelectric Micromachined Ultrasonic Transducer Based on
Mass Loading EffectLei Wang，Jie Zhou, Wei Zhu, Zhipeng Wu, Wenjuan Liu, Chengliang Sun; Institute of Technological Sciences,
China

76

Friday, April 9, 2021
15:30–17:10 ShuShan Hall
Session WE2P2: Photonic Devices
Chair: Lili Wang, Chinese Academy of Sciences
Co-Chair Myungsoo Kim, University of Texas at Austin

WE2P2-1 15:30
Analog Switches Based on Boron Nitride Memristors for Application in 5G andTerahertz Communication Systems (Invited talk)
Myungsoo Kim1, Emiliano Pallecchi2, Guillaume Ducournau2, Henri Happy2, Deji Akinwande1; 1University of Texas at Austin,
USA, 2 University of Lille, France

WE2P2-2 15:50
Photonic Machine Intelligence: Photonic Tensor Core and Nonvolatile Memories(Invited talk)Volker J. Sorger; George Washington University, USA

WE2P2-3

16:10

Efficient Silicon Photonic Waveguide Switches for Chip-Scale Beam Steering
Applications (Invited talk)
Li-Yuan Chiang1, Chun-Ta Wang2, Steve Pappert1, Paul K. L. Yu1; 1University of California San Diego, USA, 2National Sun YatSen University, China

WE2P2-4 16:30
A Design of Horizontal Perovskite Nanowire LED for Better Light Extraction
Qianpeng Zhang1,2, Yuanjing Lin3, Xiaofei Sun1, Bryan Cao1, Haoning Tang,4, Zhiyong Fan1,2; 1The Hong Kong
University of Science and Technology, China, 2HKUST-Shenzhen Research Institute, China, 3Southern University

WE2P2-5 16:50
Loss Compensation Symmetry for TE Modes of Asymmetrical Optical Coupler with
Gain and Loss
Anton Hlushchenko1,2, Vitalii Shcherbinin2, Denis Novitsky3, Vladimir Tuz1; 1Jilin University, China, 2Institute ofPhysics and Technology of NASU, Ukraine, 3NASB, Belarus

77Friday, April 9, 2021
15:30–17:10 ShuYun Hall
Session WE2P3: 2D materials and devices I
Chair: Xinran Wang, Nanjing University
Co-Chair: Zenghui Wang, UESTC

WE2P3-1 15:30
All 2D Heterostructure Tunnel Field Effect Transistors (Invited talk)
Kosuke Nagashio; University of Tokyo, Japan

WE2P3-2 15:50
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices(Invited talk)
Xiangyu Wu, Dennis Lin, Daire Cott, Jean-Francois de Marneffe, Benjamin Groven, Stephanie Sergeant, Yuanyuan Shi,
Quentin Smets, Surajit Sutar, Inge Asselberghs, Iuliana Radu; IMEC, Belgium

WE2P3-3 16:10
Epitaxial Growth of Single-Crystal Two-Dimensional Materials for Electronic
Applications (Invited talk)
Areej Aljarb1,2, Vincent Tung1, Lain-Jong Li1,3; 1KAUST Solar Centre, Kingdom of Saudi Arabia, 2King Abdulaziz University,
Kingdom of Saudi Arabia, 3 TSMC Taiwan

WE2P3-4 16:30
A Compact Model for Transition Metal Dichalcogenide Field Effect Transistors with
Effects of Interface Traps
Yifei Xu, Weisheng Li, Dongxu Fan, Yi Shi, Hao Qiu, Xinran Wang; National Laboratory of Solid State
Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced
Microstructures, Nanjing University, Nanjing, China

WE2P3-5 16:50
Reliability of Ultrathin High-k Dielectrics on 2D Semiconductors
Zhihao Yu1,2 , Hongkai Ning2, Weisheng Li2 , Lei Liu2 , Wanqing Meng2 , Zhongzhong Luo2 , Songhua Cai3 , Taotao
Li2, Peng Wang3 , Yi Shi2 , Yong Xu1 , Xinran Wang2; 1Nanjing University of Posts and Telecommunications, China,
2School of Electronic Science and Engineering, Nanjing University, China, 3College of Engineering and Applied
Sciences, Nanjing University, China

78

Friday, April 9, 2021
15:30–17:10 ShuJin Hall
Session WE2P4: Charge based memories
Chair: Shimeng Yu, Georgia Institute of Technology
Co-Chair: Bing Chen, Zhejiang University

WE2P4-1 15:30
The Case for Ferroelectrics in Future Memory Devices (Invited talk)Thomas Mikolajick1,2, Uwe Schroeder1, Stefan Slesazeck1;1NaMLab gGmbH, Germany, 2IHM, Germany

WE2P4-2 15:50
A Multiscale Statistical Evaluation of DRAM Variable Retention Time (Invited talk)
Plamen Asenov1 , Salvatore M. Amoroso1 , Jaehyun Lee1 , Fabiano Corsetti4 , Pieter Vancraeyveld4 , Søren Smidstrup4 ,XiWei Lin3 ,Victor Moroz3; 1Synopsys, Scotland, 2Synopsys, Denmark, 3Synopsys, USA

WE2P4-3 16:10
3D-NAND cell challenges to enable high density and high performance devices(Invited talk)Tecla Ghilardi; Micron

WE2P4-4 16:30
Performance Boost of p-MOSFET with Al-Incorporated HfSiOx in DRAM Periphery
Transistor Application
Xingsong Su, Kang You, Mengmeng Yang, Juanjuan Huang, Wei Yang, Weiping Bai, Jie Bai, Er-xuan Ping; Changxin
Memory Technologies, Inc, China

WE2P4-5 16:50
Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling
with 6-Bit per Cell (HLC) and Beyond
Yuta Aiba, Hitomi Tanaka, Takashi Maeda, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Toshio Fujisawa, Mie
Matsuo, Tomoya Sanuki; Kioxia Corporation, Japan79

Saturday, April 10, 2021
11:30–12:30 ShuFeng Hall
Session TH1A1: Advanced Process Technology III
Chair: Ming Li, Peking University
Co-Chair: Walter Schwarzenbach, SOITEC

TH1A1-1 11:30
Smart Cut SiC Substrates for Manufacturing of High Quality Power Devices (Invited
talk)
Walter Schwarzenbach; SOITEC, France

TH1A1-2 11:50
Directed Self-Assembly of Block Copolymers for Microelectronic Manufacturing(Invited talk)
Shisheng Xiong; Fudan University, China

TH1A1-3 12:10
Nanolithography to Beat the Diffraction Limit Using Ultrafast Laser (Invitedtalk)
Xuanming Duan; Jinan University, China

80

Saturday, April 10, 2021
11:30–12:30 ShuShan Hall
Session TH1A2: Flexible Devices
Chair: Xiaojun Guo, Shanghai Jiao Tong University
Co-Chair: Sheng Xu, University of California, San Diego

TH1A2-1 11:30
Flexible Semiconductor Device Technologies (Invited talk)
Huilong Zhang, Tzu-Hsuan Chang, Seunghwan Min, Zhenqiang Ma; University of Wisconsin-Madison, USA

TH1A2-2 11:50
Personalized Medicinal Platform (Invited talk)Muhammad M. Hussain; King Abdullah University of Science and Technology, Saudi Arabia

TH1A2-3 12:10
Low-Voltage Synaptic Transistor Based on Polyvinylpyrrolidone Composite
Electrolyte for Humidity Sensing
Wenhui Fu1, Jiang Dongliang1 , He Liangchun1 ,Yang Yaohua1 , Chen Qi1 , Zhang Jianhua2, Li Jun1; 1Shanghai University,
China, 2Ministry of Education, Shanghai University, China

81

Saturday, April 10, 2021
11:30–12:30 ShuYun Hall
Session TH1A3: Emerging devices for in-memory and neuromorphic
computing
Chair: Haifeng Yu, Peking University
Co-Chair: Jianjun Zhang, Chinese Academy of Sciences

TH1A3-1 11:30
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean
Fompeyrine, Bert Jan Offrein; IBM Zurich Research Laboratory, Switzerland

TH1A3-2 11:50
A Novel Leaky-FeFET Based True Random Number Generator with Ultralow
Hardware Cost for Neuromorphic Application
Tianyi Liu1 , Jin Luo1 , Xinming Wei1 ,Qianqian Huang1,2 , Ru Huang1,2; 1 Peking University, China, 2National Key Laboratoryof Science and Technology on Micro/Nano Fabrication, China

TH1A3-3 12:10
Hf1-xZrxO2 Based Bipolar Selector with High Uniformity and High Selectivity forLarge-Scale Integration of Memristor Crossbars
Caidie Cheng1,2, Keqin Liu2 , Bingjie Dang2 , Liying Xu2 , Zhen Yang2 , Xiaoqin Yan1, Yuchao Yang2, Ru Huang2; 1University of
Science and Technology Beijing, China, 2Peking University, China

82

Saturday, April 10, 2021
11:30–12:30 ShuJin Hall
Session TH1A4: The Photon Challenge: No Longer Light Manufacturing
Chair: Qi Liu, Institute of Microelectronics, CAS
Co-Chair: Patrick Fay, University of Notre Dame

TH1A4-1 11:30
Silicon Nanophotonic Devices for On-chip Optical Modulation and Switching(Invited talk)Daoxin Dai , Lijia Song ,Bingchen Pan; Zhejiang University, China

TH1A4-2 11:50
Purcell effect and lasing from quantum dots in a topological photonic crystal
nanocavity (Invited talk)
Xin Xie1,2, Weixuan Zhang3,4, Xiaowu He5 , Huiming Hao5 , Haiqiao Ni5 , Zhichuan Niu5 , Xiangdong Zhang3,4, Xiulai Xu1,2,6;
1Institute of Physics, Chinese Academy of Sciences, China, 2CAS Center for Excellence in Topological Quantum Computationand School of Physical Sciences, University of Chinese Academy of Sciences, China, 3School of Physics, Beijing Institute ofTechnology, China, 4School of Physics, Beijing Institute of Technology, China, 5Institute of Semiconductors Chinese
Academy of Sciences, China, 6Songshan Lake Materials Laboratory, China

TH1A4-3 12:10
Manufacturing of State-of-The-Art InP-Based Photonic Integrated Circuits (Invited
talk)Fred Kish; NCSU/Infinera

83

Saturday, April 10, 2021
13:50–15:30 ShuFeng Hall
Session TH2P1: Bio-MEMS/NEMS
Chair: Xinxin Li, SIMIT-CAS
Co-Chair: Jiahao Zhao, Tsinghua University

TH2P1-1 13:50
Manipulation and Characterization of Human Cardiomyocytes for Drug Screening(Invited talk)Yu Sun; University of Tronto, Canada

TH2P1-2 14:10
The manufacture and characterization of a novel ultrasonic transducer for
medical imaging
Jian-Song Sheng1, Yunfei Zhao1, Yancong Qiao, Jiang Ling, Jun Fu, Yi Yang, Tian-Ling Ren; Tsinghua University, China

TH2P1-3 14:30
Shrink Polymer Micro Sensors for Detection of Water Pollutants (Invited talk)Tianhong Cui; University of Minnesota, USA

TH2P1-4 14:50
A Flexible Electroencephalography Electronic Skin Based on Graphene
Ge Deng1,2,Yan-cong Qiao1 ,Ning-qin Deng1 ,Xiao-shi Li1 ,Qi Wu1 ,Ying-fen Zeng1,2, Si-fan Yang2, Tian-Ling Ren1;
1Tsinghua University, China 2Graduate School at Shenzhen, Tsinghua University,China

TH2P1-5 15:10
Surface Modification to Improve the Electrochemical Performance of Neural
Microelectrode Arrays
Shuguang Yang, Yujie Yang, Liang Geng, George Adedokum, Dongcheng Xie, Ruichen Liu, Lei Xu; University of
Science and Technology of China, China

84

Saturday, April 10, 2021
13:50–15:30 ShuShan Hall
Session TH2P2: Photodetection and Display Technologies
Chair: Zheng Lou, University of Chinese Academy of Sciences
Co-Chair: Volker Sorger, The George Washington University

TH2P2-1 13:50
Bionic Eye with Perovskite Nanowire Array Retina (Invited talk)
Leilei Gu, Swapnadeep Poddar, Yuanjing Lin, Zhenghao Long, Daquan Zhang, Qianpeng Zhang, Lei Shu, Xiao Qiu, Matthew
Kam, Zhiyong Fan; Hong Kong Univ. of Sci. and Tech, China

TH2P2-2 14:10
β-Ga2O3 Micro-Flake FET SBPD with Record Detectivity of 3.87×1017 Jones for
Weak Light Detection
Shunjie Yu1 , Mengfan Ding1 , Wenxiang Mu2 , Zhitai Jia2 , Xiaohu Hou1 , Zhongfang Zhang1 , Pengju Tan1 , Xiaolong
Zhao1,Guangwei Xu1 , Shibing Long1; 1University of Science and Technology of China, China; 2Shandong University, China

TH2P2-3 14:30
Large Area and Flexible Organic Active Matrix Image Sensor Array Fabricatedby Solution Coating Processes at Low Temperature
Xiao Hou1, Wei Tang1, Sujie Chen1, Jianghu Liang2, Hanyang Xu1, Bang Ouyang1, Ming Li1, Yawen Song1, Chun-chao Chen2,
Patrick Too3, Xiaoqing Wei4, Libo Jin4, Gang Qi5, Xiaojun Guo1; 1School of Electronic Information and Electrical Engineering,
Shanghai Jiao Tong University, China, 2School of Material Science and Engineering, Shanghai Jiao Tong University, China,
3FlexEnable, UK, 4iRay Technology, China, 5Tianma Microelectronics, China

TH2P2-4 14:50
A Sensitive Vertical Standing Graphene/Silicon Schottky Photodetector to Angle
Changes
Ning-Qin Deng1,4 , Zhen-Yi Ju1, Ge Deng1, Hou-Fang Liu1, Xiang-Shun Geng1 , Xiu-Feng Jia1 , Jun Ren1 , Tian-Zhong
Yang2 , Dan Xie1 , Yi Yang1 , He Tian1, Tian-Ling Ren1,3; 1Tsinghua University, China, 2Chinese Academy of Sciences,
China, 3Center for Flexible Electronics Technology, Tsinghua University, Beijing, China, 4National Institute ofMetrology (NIM), Beijing, China

TH2P2-5 15:10
Ultra-High-Sensitivity Photodetector from Ultraviolet to Visible Based on GaDoped In2O3 Nanowire Phototransistor with Top-Gate Structure
Wenhao Ran , Zheng Lou , Guozhen Shen; University of Chinese Academy of Sciences, China
85

Saturday, April 10, 2021
13:50–15:30 ShuYun Hall
Session TH2P3: 2D materials and devices II
Chair: Yanqing Wu, Peking University
Co-Chair: Fengqiu Wang, Nanjing University

TH2P3-1 13:50
From the Top or Through the Edge: What is the Most Scalable Contact to 2D
Semiconductors? (Invited talk)Aaron D. Franklin; Duke University, USA

TH2P3-2 14:10
Semiconductor Nanostructures for Optoelectronic and Energy Applications(Invited talk)Hoe Tan; Australian National University, Australia

TH2P3-3 14:30
Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors Using
Stacked Architecture
Yun Sun1, Dong-Sheng Zhu2,Yang Jian3 ,Chao Zang1, Dong-Ming Sun1; 1Chinese Academy of Sciences, China, 2Shenyang
Ligong Univ., China, 3Northeastern Univ. China

TH2P3-4 14:50
Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides
Featuring Unique Conductive-Point Random Access Memory EffectXiaohan Wu1 , Ruijing Ge1 , Yuqian Gu1 , Emmanuel Okogbue2 , Jianping Shi3 , Abhay Shivayogimath3 , Peter
Bøggild4 , Timothy J. Booth4 , Yanfeng Zhang3 , Yeonwoong Jung2 , Jack C. Lee1, Deji Akinwande1 ; 1University ofTexas at Austin, Austin, USA, 2University of Central Florida, USA, 3Peking University, China, 4Technical Universityof Denmark,Denmark

TH2P3-5 15:10
A Study of Materials Impacts on Graphene Electrostatic Discharge Switches
Cheng Li, Mengfu Di, Zijin Pan, Albert Wang; University of California, Riverside, USA

86

Saturday, April 10, 2021
13:50–15:30 ShuJin Hall
Session TH2P4: Advanced Packaging
Chair: Ke Xiao, NCAP
Co-Chair: Sarah Ying Zhong, University of South Florida

TH2P4-1 13:50
Modeling for assessing Semiconductor Packages in High-Reliability Applications(Invited talk)Chris Bailey; University of Greenwich, UK

TH2P4-2 14:10
Fan-Out Wafer and Panel Level Packaging - A Platform for 3D Integration (Invitedtalk)
Tanja Braun1 ,Karl-Friedrich Becker1 ,Michael Töpper1 ,Rolf Aschenbrenner1 ,Martin Schneider-Ramelow2; 1Fraunhofer IZM,
Germany, 2Technical University Berlin, Germany

TH2P4-3 14:30
Growth Behavior and Mechanism of Tin Whisker on Isolated SnAg Solder
Under Compressive StressShuhui Chen , Xundi Zhang , Lingyue Tan ,Anmin Hu , Huiqin Ling , Ming Li, Tao Hang; Shanghai Jiao Tong University, China

TH2P4-4 14:50
Undercooling and Microstructure Analysis for the Design of Low Melting Point
SolderLi Pu1 , Yongjun Huo1 , Xiuchen Zhao1 , K. N. Tu2 , Yingxia Liu1; 1 Beijing Institute of Technology, China, 2Universityof California, Los Angeles, USA

TH2P4-5 15:10
An Epoxy Composite Film for Modified Semi-Addictive Process
Suibin Luo, Junyi Yu, Pengpeng Xu, Jie Liu, Shuhui Yu, Rong Sun, Yougen Hu; Chinese Academy of Sciences, China

87

Saturday, April 10, 2021
15:50–17:30 ShuFeng Hall
Session TH3P1: Advanced CMOS Technologies
Chair: Toshiro Hiramoto, University of Tokyo
Co-Chair: Jiezhi Chen, Shandong University

TH3P1-1 15:50
Disruptive Technology Elements, and Rapid and Accurate Block-Level Performance
Evaluation for 3nm and Beyond (Invited talk)
M.H. Na1, D. Jang1, R. Baert1, S. Sarkar1, S. Patli1, O. Zografos1, B. Chehab1, A. Spessot1, G.Sisto2, P. Schuddinck1, H. Mertens1 ,Y.Oniki1 , G. Hellings1 , E. Dentoni Litta1 , J. Ryckaert1 , N.Horiguchi1; 1imec, Belgium, 2Cadence Design System, USA

TH3P1-2 16:10
Advanced CMOS Technologies for Ultra-Low Power Logic and AI Applications(Invited talk)Shinichi Takagi, Kasidit Toprasertpong, Kimihiko Kato, Kei Sumita , Eishin Nako , Ryosho Nakane, Kwang-won Jo, Mitsuru
Takenaka; University of Tokyo, Japan

TH3P1-3 16:30
Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic
Temperature
Shohei Sekiguchi, Min-Ju Ahn , Takuya Saraya , Masaharu Kobayashi, Toshiro Hiramoto; University of Tokyo, Japan

TH3P1-4 16:50
Sub-3nm Transition-Metal Dichalcogenides FETs: Theoretical Insights into the
Impacts of Layer Numbers and Channel Lengths
Fei Wang, Xiaolei Ma, Wei Wei, Pengpeng Sang, Qianwen Wang, Weiqiang Zhang, Yuan Li, Jiezhi Chen; Shandong
University, China

TH3P1-5 17:10
Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor
Transistors by Gate Engineering
Jingyi Ma1, Ling Tong1, Xiaojiao Guo1, Xinyu Chen1, Minxing Zhang1, Chenjian Wu2, Wenzhong Bao1; 1Fudan
University, China, 2Soochow University, China

88

Saturday, April 10, 2021
15:50–17:30 ShuShan Hall
Session TH3P2: GaN power devices
Chair: Shibing Long, University of Science and Tecnology of China
Co-Chair: Ray Hueting, University of Twente

TH3P2-1 15:50
150 mm RF GaN Technology for Commercial RF Applications (Invited talk)
B. Green, K. Moore, S. Klingbeil, C. Rampley, P. Renaud, D. Burdeaux, D. Hill, C. Zhu, J. Wan, K. Kim, C. Gaw, T. Arnold, F.
Vanaverbeke, J. Finder; NXP Semiconductors, USA

TH3P2-2 16:10
Nearly Ideal Quasi-Vertical GaN Schottky Barrier Diode with 10 10 High On/Off Ratioand Ultralow Turn on Voltage via Post Anode Annealing
Jiabo Chen, Zhihong liu , Zhaoke Bian, haiyong Wang, Xiaoling Duan, Jing Ning, Jincheng Zhang, Yue Hao; Xidian University,
China

TH3P2-3 16:30
A Novel Normally-Off Laterally Coupled p-GaN Gate HEMT
Xing Wei1,2, Xiaodong Zhang1,2, Chi Sun1,2, Wenxin Tang1,2, Tao He2 , Xuan Zhang2, Guohao Yu2, Liang Song2 , Wenkui Lin1,2,
Yong Cai2, Baoshun Zhang2; 1University of Science and Technology of China, China, 2Suzhou Institute of Nano-Tech andNano-Bionics, China

TH3P2-4 16:50
Reverse Conduction Induced Dynamic Ron Effect in GaN HEMT with p-GaN Gate
Shaoyu Sun1,2, Ling Xia3, Wengang Wu2, Yufeng Jin1, 2; 1Peking University ShenZhen Graduate School, China,
2Peking University, China, 3Shenzhen Hai Li Technology Inc., China

TH3P2-5 17:10
3D GaN Power Switching Electronics: A Revival of Interest in ELO (Invited talk)
Jia Wang1,2, Hiroshi Amano2, Ya-Hong Xie1 ; 1University of California, Los Angeles, USA, 2Nagoya University, Japan89

Saturday, April 10, 2021
15:50–17:30 ShuYun Hall
Session TH3P3: Modeling of Ferroelectronics
Chair: Peng Huang, Peking University
Co-Chair: Rongmei Chen, IMEC

TH3P3-1 15:50
Variability Analysis for Ferroelectric Field-Effect Transistors
Gihun Choe, Shimeng Yu; Georgia Institute of Technology, USA

TH3P3-2 16:10
Revisiting the Definition of Ferroelectric Negative Capacitance Based on Gibbs
Free Energy
Yuanyuan Zhang1,2, Xueli Ma1,2, Xiaolei Wang1,2, Jinjuan Xiang1,2, Wenwu Wang1,2; 1Institute of Microelectronics, Chinese
Academy of Sciences, China, 2University of Chinese Academy of Sciences, China

TH3P3-3 16:30
Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient
Computational Technologies (Invited talk)D. Esseni, R. Fontanini, D. Lizzit, M. Massarotto, F. Driussi, M. Loghi; University of Udine, Italy

TH3P3-4 16:50
On the Critical Role of Ferroelectric Thickness for Negative Capacitance Transistor
Optimization
Om Prakash1, Aniket Gupta1,2, Girish Pahwa3, Yogesh S. Chauhan4, Hussam Amrouch5; 1Karlsruhe Institute ofTechnology, Germany, 2National Institute of Technology Uttarakhand, India, 3University of California, Berkeley,
USA, 4 Indian Institute of Technology Kanpur, India, 5 University of Stuttgart, Germany

TH3P3-5 17:10
Modelling and Design of FTJs as High Reading-Impedance Synaptic Devices
R. Fontanini, M. Massarotto, R. Specogna, F. Driussi, M. Loghi, D. Esseni ; University of Udine, Italy

90

Saturday, April 10, 2021
15:50–17:30 ShuJin Hall
Session TH3P4: Yield and Manufacturing
Chair: Weihai Bu, STIC
Co-Chair: Bill Nehrer, Applied Materials

TH3P4-1 15:50
On-Chip Test Acceleration for Advanced Technologies (Invited talk)Shenzhi Yang, Fan Lan, Weiwei Pan, Ludan Yang, Yongjun Zheng; Semitronix Inc, China

TH3P4-2 16:10
Efficient Yield Analysis and Optimization with Transient Sensitivity Analysis (Invitedtalk)
Zuochang Ye, Tsinghua University, China

TH3P4-3 16:30
Statistical Feature Extraction and Hybrid Feature Selection for Material Removal
Rate Prediction in Chemical Mechanical Planarization Process
Wenlan Jiang1 , Chunpu Lv1 , Bing Yang2 , Fuquan Zhang2 , Ying Gao2 , Tao Zhang1 , Huangang Wang1; 1Tsinghua
University, China, 2Semiconductor Technology Innovation Center (Beijing) Crop, China

TH3P4-4 16:50
Maximizing Output from an Equipment Fleet in a Semiconductor Fab (Invited talk)
Sanjiv Mittal, Haim Albalak, Chris Keith, Willian Nehrer; Applied Materials, USA

TH3P4-5 17:10
Thermal Atomic Layer Etching of Microelectronic Materials (Invited talk)
Steven M. George; University of Colorado, USA91

Sunday, April 11, 2021
9:00–10:40 ShuFeng Hall
Session FR1A1: Emerging Devices and Applications
Chair: Xiao Gong, National University of Singapore
Co-Chair: Ran Cheng, Zhejiang University

FR1A1-1 9:00
Physics and Applications of Emerging Ferroelectric Devices (Invited talk)Masaharu Kobayashi; University of Tokyo, Japan

FR1A1-2 9:20
Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium
Oxide (Invited talk)
X. Lyu1 , M. Si1 , P. R. Shrestha2 , K. P. Cheung2 ,P. D. Ye1; 1Purdue University, USA, 2National Institute of Standards andTechnology, Gaithersburg, USA

FR1A1-3 9:40
Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film
Transistors with Sub-1.2 nm Equivalent Oxide Thickness
Kaizhen Han, Subhranu Samanta, Chen Sun, Jishen Zhang, Zijie Zheng, Xiao Gong; National University of Singapore,
Singapore

FR1A1-4 10:00
Tunable Random Number Generators Implemented by Spin-Orbit Torque Driven
Stochastic Switching of a Nanomagnet for Probabilistic Spin Logic
Shuai Zhang, Shihao Li, Xuecheng Zou, Jeongmin Hong, Long You; Huazhong University of Science and Technology,
China

FR1A1-5 10:20
100 nm T-Gate GaN-On-Si HEMTs Fabricated with CMOS-Compatible Metallization
for Microwave and mm-Wave Applications
Hanlin Xie1,2 , Zhihong Liu3, Yu Gao1 , Kenneth E. Lee1 , Geok Ing Ng2; 1Singapore-MIT Alliance for Research andTechnology Centre, Singapore, 2Nanyang Technological University, Singapore , 3Xidian University, China

92

Sunday, April 11, 2021
9:00–10:40 ShuShan Hall
Session FR1A2: Ga2O3, GaN power devices and Packaging trends
Chair: Wanjun Chen, University of Science and Tecnology of China
Co-Chair: Wai Tung Ng, University of Toronto

FR1A2-1 9:00
Ga2O3 Power Devices and How They Stand up to GaN and SiC (Invited talk)
Huili Grace Xing; Cornell University, USA

FR1A2-2 9:20
Channel Mobility Properties of β-Ga2O3 MOSFETs on Si Substrate Fabricated by
Ion-Cutting Process
Yibo Wang,1, Wenhui Xu,2, Genquan Han,1 Tiangui You,2 Haodong Hu,1 Yan Liu,1 Hao Huang,2 Xin Ou,2 Xiaohua Ma,1 Yue
Hao1; 1Xidian University, China, 2Chinese Academy of Sciences, China

FR1A2-3 9:40
GaN Super-Heterojunction Schottky Barrier Diode with over 10 kV Blocking
Voltage
Sang-Woo Han , Jianan Song ,Rongming Chu; Pennsylvania State University, USA

FR1A2-4 10:00
High Density Packaging Trends Driven by Miniaturization of Home Appliance
Yuquan Su, Jinqing Xu, Chi Zhang, Yasuhiro Koike; GD Midea Air-Conditioning Equipment Co., Ltd., China

FR1A2-5 10:20
Development of High-Frequency Ga2O3 Field-Effect Transistors (Invited talk)
Masataka Higashiwaki; NICT, Japan93

Sunday, April 11, 2021
9:00–10:40 ShuYun Hall
Session FR1A3: Modeling of Transistors
Chair: Xinsheng Wang, Huazhong University of Science and Technology
Co-Chair: D. Nirmal, Karunya Institute of Technology and Sciences

FR1A3-1 9:00
L-UTSOI: Best In-Class Compact Modeling Solution for FD-SOI Technologies (Invitedtalk)Thierry Poiroux1 , Sébastien Martinie1 , Olivier Rozeau1 , Michael Reiha2 , Julien Arcamone1; 1MINATEC Campus, France,
2Univ. Grenoble Alpes, France

FR1A3-2 9:20
RF Linearity of SiGe HBT: Physics, Compact Modeling Using Mextram 505 and XParameter Based Measurements (Invited talk)Guofu Niu1, Yiao Li1, Xuewei Ding1, Anni Zhang1, Huaiyuan Zhang1 Andries Scholten2, Marnix Willemsen2, Ralf Pijper2, LuukF. Tiemeijer2; 1Auburn University, USA, 2NXP Semiconductors, The Netherlands

FR1A3-3 9:40
Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device
Performance
Qingpeng Wang, Yu De Chen, Rui Bao, Cheng Li, Jacky Huang, Joseph Ervin; Lam Research company, China

FR1A3-4 10:00
Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET
Weizhuo Gan1,5, Raphaël Prentki3 , Kun Luo1 , Jiali Huo1,5, Weixing Huang1,5, Qiang Huo1,5,Jianhui Bu5 , Ronggen
Cao6 , Ye Lu2 , Huaxiang Yin1,5, Hong Guo3 , Zhenhua Wu1,5; 1Institute of Microelectronics, Chinese Academy of
Sciences, China, 2School of Information Science and Technology, Fudan University, Shanghai, China, 3McGill
University, Canada, 5University of Chinese Academy of Sciences, China, 6Department of materials, Fudan
University, China

FR1A3-5 10:20
Enhanced On-State Current in Barrier-Free Carbon Heterojunction Tunneling FieldEffect Transistor
Yu Zhu1, Wenli Zhou1,2, Li Cheng1, Qingfeng Gong1; 1Huazhong University of Science and Technology, China
2Wuhan National Laboratory of Optoelectronics, China

94

Sunday, April 11, 2021
9:00–10:40 ShuJin Hall
Session FR1A4: Electronic Materials
Chair: Xiaodong Pi, Zhejiang University
Co-Chair: Saptarshi Das, Pennsylvania State University

FR1A4-1 9:00
Tailoring the electromechanical coupling in stretchable inorganic thin-film
electronics (Invited talk)Yuan Lin; University of Electronic Science and Technology of China, China

FR1A4-2 9:20
Dynamics of Negative Capacitance Induced by Ferroelectric Switching in
Ferroelectric-Resistor Circuit
Yulong Dong1, Danyang Chen1, Ni Zhong2, Jingquan Liu1, Chungang Duan2, Xiuyan Li1; 1Shanghai Jiao Tong University,
Shanghai, China, 2East China Normal University, China

FR1A4-3 9:40
Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator
Enabled by Oxygen Vacancy Related Dipoles
Guoqing Zhang1 , Yue Peng1, Wenwu Xiao1, 2, Fenning Liu1 , Yan Liu1 , Genquan Han1, Yue Hao1; 1Xidian University, China,
2Xi’an UniIC Semiconductors, China

FR1A4-4 10:00
Selecting and Optimizing Threshold Switching Materials and Devices for Stochastic
NeuronKuan Wang, Qing Hu, Qi Lin, Dayou Zhang, Yuhui He, Hao Tong, Xiangshui Miao; Huazhong University of Scienceand Technology, China

FR1A4-5 10:20
High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
at Low Temperature
Qi Li, Junchen Dong, Dedong Han, Xing Zhang, Yi Wang; Peking University, China

95

Sunday, April 11, 2021
11:00–12:40 ShuFeng Hall
Session FR2A1: CMOS Characterization Technologies
Chair: Mitani Yuichiro, Tokyo City University
Co-Chair: Zhigang Ji, Shanghai Jiao Tong University

FR2A1-1 11:00
Low Frequency Noise: A Show Stopper for State-Of-The-Art and Future Si, GeBased and III-V Technologies (Invited talk)C. Claeys1 , A. Oliviera2 , A. Veloso3 , L. He4 , K. Takakura5 , V. Putcha3 , H. Amimura3 , E. Simoen3; 1KU Leuven, Belgium
2Universidade Tecnológica Federal do Paraná (UTFPR) , Brazil, 3Imec, Belgium, 4Xidian University, China, 5National Instituteof Technology (KOKEN), Kumamoto College, Japan

FR2A1-2 11:20
A Review of Recent MOSFET Source and Drain Resistances Extraction Methods
Using a Single Test Device (Invited talk)
Adelmo Ortiz-Conde1, Manuel A. Quevedo-Lopez2; 1Universidad Simón Bolívar,Venezuela,2University of Texas at Dallas,
USA

FR2A1-3 11:40
White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic
Device Modeling
K. Ohmori, S. Amakawa; Device Lab Inc., Japan

FR2A1-4 12:00
MOSFET C-V Characteristics Extraction Based on Ring Oscillator with Addressable
DUTs
Zhen Zhou1 , Junxu Wu2 , Changfeng Wang2 , Ganbing Shang2 , Xiaojin Li1 , Yabin Sun1 , Yanling Shi1; 1East China
Normal University, China, 2Shanghai Huali Microelectronics Corporation, China

FR2A1-5 12:20
Performance Trade-Offs in Complementary FET (CFET) Device Architectures for
3nm-Node and Beyond
Xiaoqiao Yang1 , Yabin Sun1, Ziyu Liu2, Yanling Shi1, Xiaojin Li1; 1East China Normal University, China, 2Fudan
University, China

96

Sunday, April 11, 2021
11:00–12:40 ShuShan Hall
Session FR2A2: Group IV power devices
Chair: Moufu Kong, University of Electronic Science and Tecnology of China
Co-Chair: Rongming Chu, Penn State University

FR2A2-1 11:00
Phonon Properties of Group IV Materials for Thermoelectric Applications (Invited
talk)Atsushi Ogura1, 2, Ryo Yokogawa1, 2; 1School of Science and Technology, Meiji University, Japan 2Meiji Renewable Energy
Laboratory, Meiji University, Japan

FR2A2-2 11:20
Progress and Future Challenges of SiC Power MOSFETs (Invited talk)
Tsunenobu Kimoto; Kyoto University, Japan

FR2A2-3 11:40
Novel Ultralow On-Resistance Accumulation-Mode LDMOS with Integrated
DiodesJie Wei, Zhen Ma, Congcong Li, Kaiwei Dai, Xiaorong Luo, Bo Zhang; University of Electronic Science and Technology ofChina, China

FR2A2-4 12:00
Process Improvement for Stabilizing the VLD Effective Dose of 4500V TrenchGated IGBT Platform
Rui Jin1, Li Li1, Kui Pu2, Jun Zeng2,3, Longlai Xu2 , Xiaohu Deng4, Pan Yin4, Yaohua Wang1, Wenhong Zhang2,
Mohamed N. Darwish2,3; 1Global Energy Interconnection Research Institute co., Ltd.,China, 2MaxPower
Semiconductor Inc., China, 3 MaxPower Semiconductor Inc., USA,4China Resource Microelectronics Limited, China

FR2A2-5 12:20
Accurate TCAD Simulation of Trench-Gate IGBTs and Its Application to Predictionof Carrier Lifetime Requirements for Future Scaled Devices (Invited talk)
M. Watanabe1 , N. Shigyo1 , T. Hoshii1 , K. Furukawa1 , K. Kakushima1 , K. Satoh2 , T. Matsudai3 , T. Saraya4 , T.
Takakura4 , I. Muneta1 , H. Wakabayashi1 , A. Nakajima5 , S. Nishizawa6 , K. Tsutsui1 , T. Hiramoto4 , H. Ohashi1 , H.
Iwai1; 1Tokyo Institute of Technology, Japan, 2Mitsubishi Electric Corp., Japan, 3Toshiba Electronic Devices &Storage Corp., Japan, 4University of Tokyo, Japan, 5Nat. Inst. Advanced Industrial Science and Technology,
Japan,6Kyushu University, Japan

97

Sunday, April 11, 2021
11:00–12:40 ShuYun Hall
Session FR2A3: Modeling of Memory, Quantum, and TFT
Chair: Lang Zeng, Beihang University
Co-Chair: Lining Zhang, Peking University Shenzhen Graduate School

FR2A3-1 11:00
A Compact Model of Analog RRAM Considering Temperature Coefficient for
Neural Network Evaluation
Minghong Xu1, Bin Gao1, Feng Xu1, Wei Wu1, Jianshi Tang1, Jiezhi Chen2, He Qian1; 1Tsinghua University, China, 2Shandong
University, China

FR2A3-2 11:20
Development of Integrated Device Simulator for Quantum Bit Design: SelfConsistent Calculation for Quantum Transport and Qubit Operation
Hidehiro Asai, Shota Iizuka, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Kimihiko Kato, Hiroyuki Ota,
Takahiro Mori; National Institute of Advanced Industrial Science and Technology (AIST), Japan

FR2A3-3 11:40
Designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing
Applications
Zewei Wang1 , Chengwei Cao2 , Puqing Yang1,3, Yumeng Yuan1 , Zhidong Tang1 , Renhe Chen1 , Weican Wu2 , Xin Luo2 , Ao
Guo2 , Liujiang Yu4 , Ganbing Shang4 , Zhaofeng Zhang3 , Shaojian Hu2 , Xufeng Kou1; 1ShanghaiTech University, China,
2Shanghai IC Research and Development Center, China, 3Chinese Academy of Sciences, China, 4Huali Microelectronics
Corporation (HLMC), China

FR2A3-4 12:00
Compact Modeling of Organic and IGZO TFTs from 150K to 350K (Invited talk)
Benjamin Iñiguez1 , Harold Cortés-Ordóñez1 , Gérard Ghibaudo2 , Antonio Cerdeira3 , Magali Estrada3 ; 1University
Rovira i Virgili, Spain, 2MINATEC/INPG ,France, 3CINVESTAV, Mexico

FR2A3-5 12:20
Compact Physics-Based Charge Core Model for CAAC In-Ga-Zn Oxide Multi-Gate
FETs
Slobodan Mijalkovic1, Bogdan Tudor1, Makoto Watanabe1, Hitoshi Kunitake2, Takayuki Ikeda2, Shunpei Yamazaki2;
1Silvaco, Inc., USA, 2Semiconductor Energy Laboratory Co., Japan98

Sunday, April 11, 2021
11:00–12:40 ShuJin Hall
Session FR2A4: RF reliability and Power electronics reliability
Chair: Xing Wu, East China Normal University
Co-Chair: Yuhao Zhang, Virginia Tech

FR2A4-1 11:00
RF Silicon Technologies and Its Reliability for Sub-6GHz and mmWave 5G
Applications (Invited talk)P. Srinivasan; GLOBALFOUNDRIES Inc., USA

FR2A4-2 11:20
Re-Consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities (Invitedtalk)Yuichiro Mitani; Tokyo City University, Japan

FR2A4-3 11:40
ESD Co-Design of mm-Wave RF Switch in 22nm SOI
Feilong Zhang, Cheng Li, Mengfu Di, Zijin Pan, Han Wang, Albert Wang; University of California, Riverside, USA

FR2A4-4 12:00
Experimental Understanding of the Impact of Channel Percolation on Low
Frequency Noise Using Transient Enhanced Diffusion of Channel Dopants
Shuntaro Fujii, Soichi Morita, Tsutomu Miyazaki; Asahi Kasei Microsystems, Japan

FR2A4-5 12:20
Design for Reliability based on Customer Obsession (Invited talk)
Owen Liu; Amazon Corp., Product Integrity, China

99

Sunday, April 11, 2021
14:00–15:40 ShuFeng Hall
Session FR3P1: Advanced Process Technology I
Chair: Ming Li, Peking University
Co-Chair: Anne Vandooren, IMEC

FR3P1-1 14:00
Nanosheet FETs and Their Potential for Enabling Continued Moore's Law Scaling(Invited talk)
A. Veloso, G. Eneman, A. De Keersgieter, D. Jang, H. Mertens, P. Matagne, E. Dentoni Litta, J. Ryckaert, N. Horiguchi; Imec,
Belgium

FR3P1-2 14:20
Technology Trends in 2.5D/3D Packaging and Heterogeneous Integration (Invitedtalk)
Masaya Kawano ; Institute of Microelectronics, A*STAR, Singapore

FR3P1-3 14:40
Optimization of Contact W Related Processes for 28/22 nm HKMG Technology
Node
Hai-Jin Lu, Zong-Yan Pan, Pei-Yu Chen, Zhi-Cheng Zhang, Ming-Zhi Chen; Shanghai Huali Microelectronics Corporation,
China

FR3P1-4 15:00
Formation Mechanism of a Rounded SiGe-Etch-Front in an Isotropic Dry SiGe Etch
Process for Gate-All-Around (GAA)-FETs
Yu Zhao, Taku Iwase, Makoto Satake, Hirotaka Hamamura; Hitachi, Ltd., Japan

FR3P1-5 15:20
Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped
Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application
Dongxue Zhao1,2,3, Zhiliang Xia1,2,3, Linchun Wu3 , Tao Yang1,2,3, Dongyu Fan1,2,3, Yuancheng Yang3 , Lei Liu3 , Wenxi
Zhou3 , Zongliang Huo1,2,3; 1Institute of Microelectronics of the Chinese Academy of Sciences, China, 2Universityof Chinese Academy of Sciences, China, 3Yangtze Memory Technologies Company, Ltd., China

100

Sunday, April 11, 2021
14:00–15:40 ShuShan Hall
Session FR3P2: Materials and Designs for Wearable Sensing
Chair: Feng Yan, The Hong Kong Polytechnic University
Co-Chair: Wentao Xu, Nankai University

FR3P2-114:00
Flexible and Wearable Sensing Electronics (Invited talk)Ting Zhang; Suzhou Institute of Nano‐Tech and Nano‐Bionics, China

FR3P2-2 14:20
Emerging Designs for Polymer-Based Optoelectronics and Energy Storage (Invitedtalk)
Tse Nga Ng; University of Califonria San Diego, USA

FR3P2-3 14:40
Highly Stable Fibrous Solid-State Ag/AgCl Reference Electrode
Chaochao Shen, Xin Xi, Wei Tang, Xiaojun Guo, Ruili Liu; Shanghai Jiao Tong University, China

FR3P2-4 15:00
Fabrication of Highly Sensitive Flexible Tactile Sensor with HierarchicalMicrostructures for Wearable Electronics
Qifeng Du1, Ying Chen1,2, Zhijian Wang1, Jun Ai1, Baicheng Zhang1, Lanlan Liu1, Xue Feng3; 1Institute of Flexible
Electronics Technology of THU, China. 2Qiantang Science and Technology Innovation Center, China,3Tsinghua
University, China

FR3P2-5 15:20
Printed Stretchable Multifunctional E-Textile for Wearable Electronics
Bin Tian, Wei Wu; Wuhan University, China

101

Sunday, April 11, 2021
14:00–15:40 ShuYun Hall
Session FR3P3: Neural network circuits and systems
Chair: Yuchao Yang, Peking University
Co-Chair: Xiaojian Zhu, Chinese Academy of Sciences

FR3P3-1 14:00
Implementation, Operation and Applications of Memristive Neural Networks(Invited talk)
Qiangfei Xia; University of Massachusetts, USA

FR3P3-2 14:20
In-memory computing with memristor content addressable memory circuits(Invited talk)Catherine Graves; HP Labs, USA

FR3P3-3 14:40
A Neural Network-Based Harmonic Suppression Algorithm for Medium-ToHigh Resolution ADCs (Invited talk)Xizhu Peng1 , Yihang Mi1 , Yunfan Zhang1 , Yao Xiao1 , Wei Zhang1 , Yong Tang1 , He Tang1,2; 1 University of Electronic Scienceand Technology of China, China, 2Guangdong Institute of electronic information engineering, University of Electronic
Science and Technology of China, China

FR3P3-4 15:00
Artificial Neuron with Spike Frequency Adaptation Based on Mott Memristor
Qiumeng Wei1, Jianshi Tang1,2, Xinyi Li1, Yanan Zhong1, Bin Gao1,2, He Qian1,2, Huaqiang Wu1,2; 1Institute ofMicroelectronics, Tsinghua University, China, 2Beijing Innovation Center for Future Chips (ICFC), Tsinghua
University, China

FR3P3-5 15:20
Associative Learning Circuit Based on Synaptic Transistors with Temporal
Dynamics
Chang Liu, Zhaokun Jing, Yuchao Yang, Ru Huang; Peking University, China

102

Sunday, April 11, 2021
14:00–15:40 ShuJin Hall
Session FR3P4: Applications for Machine Learning in Semiconductor
Manufacturing
Chair: Tang He, University of Electronic Science & Technology of China
Co-Chair: Shuji Ikeda, tei Solutions Inc

FR3P4-1 14:00
Applications of AI Technologies in Flash Memory Business (Invited talk)
Ryohei Orihara; Digital Process Innovation Center Kioxia Corporation, Japan

FR3P4-2 14:20
Applications for Machine Learning in Semiconductor Manufacturing and Test
(Invited talk)Chen He1 , Hanbin Hu2 , Peng Li2; 1NXP Semiconductors, Austin, USA, 2University of California at Santa Barbara, USA

FR3P4-3 14:40
Machine Learning Approaches Optimizing Semiconductor Manufacturing
Processes (Invited talk)Tsuyoshi Moriya; Tokyo Electron Limited, Japan

FR3P4-4 15:00
Applications for Machine Learning in Semiconductor Manufacturing (Invited talk)Richard Burch, Luke Merrick, Qing Zhu, Tomonori Honda, Jeff David; PDF Solutions, USA

FR3P4-5 15:20
Improving accuracy and cycle-time in computational lithography with Machine
Learning (Invited talk)Shibing Wang; ASML, Netherlands

103Sunday, April 11, 2021
16:00–17:40 ShuFeng Hall
Session FR4P1: Advanced Process Technology II
Chair: Xiaojian Zhu, Chinese Academy of Sciences
Co-Chair: Bich-Yen Nguyen, SOITEC

FR4P1-1 16:00
Sputtering Growth of Metal Oxynitride Semiconductors for Excitonic Devices(Invited talk)Ryota Narishige, Naho Itagaki, Masaharu Shiratani; Kyushu Univ., Japan

FR4P1-2 16:20
Growth of Ferroic Metal Oxide Films with Desired Properties by Polymer-Assisted
Deposition (Invited talk)Samyak Dhole, Quanxi Jia; University at Buffalo – The State University of New York, USA

FR4P1-3 16:40
Effect of Low Temperature Annealing on PN Junction Formation Using Si Paste
Huan Zhu1, Yusuke Kuboki1, Morihiro Sakamoto1, Yoshimine Kato2; 1Department of Automotive Science, Kyushu University,
Japan, 2Faculty of Engineering, Kyushu University, Japan

FR4P1-4 17:00
Optimization of Tilted Profile in Ultra-High Aspect Ratio Etch Process for 3D NAND
Flash Memory
Jinqing He1,2,3, Zhiliang Xia1,2,3, Meng Wang3, Guangxuan Zhang3 , Haiqing Dou3 , Zongliang Huo1,2,3; 1 University ofChinese Academy of Sciences, China, 2Institute of Microelectronics of the Chinese Academy of Sciences,
China,3Yangtze Memory Technologies Company, Ltd.,China

FR4P1-5 17:20
Forming Low-Resistivity Tungsten Contacts and Avoiding Fluorine Diffusion byFlash Lamp Annealing (FLA)
Shogo Shigemasu, Hideaki Tanimura, Hikaru Kawarazaki, Shinichi Kato; SCREEN Semiconductor Solutions Co. Ltd.,
Japan

104

Sunday, April 11, 2021
16:00–17:40 ShuShan Hall
Session FR4P2: Flexible and Stretchable Systems
Chair: Jie Zhang, Jiangnan University
Co-Chair: Inhee Lee, Unversity of Pittsburgh

FR4P2-1 16:00
Artificial synapses and sensorimotor nerves (Invited talk)Wentao Xu; Nankai University, China

FR4P2-2 16:20
Rubbery electronics and integrated systems (Invited talk)Cunjiang Yu; University of Houston, USA

FR4P2-3 16:40
Printed conformable electronics for body-worn sensors and systems (Invitedtalk)Matti Mäntysalo; Tampere University, Finland

FR4P2-4 17:00
FMM Free Organic and Hybrid Electronics Manufacturing Enabled by
Photolithography (Invited talk)Tung-Huei Ke1, Calvin Mona Sandehang1,2, Chi-Ting Tsai1,3, Gema Molina Alvarez1 , Erwin Vandenplas1 , Paul
Heremans1,2, Pawel E. Malinowski1; 1imec, Belgium, 2KU Leuven., Belgium, 3National Cheng Kung Univ., Belgium

FR4P2-5 17:20
Semi-Disposable Self-Adhesive Sensor System for Wearable Electrocardiogram
Detection
Fangran Bian, Sujie Chen, Ming Li, Yishen Pei, Xiaojun Guo; Shanghai Jiao Tong University, China

105

Sunday, April 11, 2021
16:00–17:40 ShuYun Hall
Session FR4P3: Neuromorphic and quantum computing
Chair: Dmitri Strukov, UC Santa Barbara
Co-Chair: Xi-Zhu Peng, University of Electronic Science and Technology

FR4P3-1 16:00
Wafer-scale integration of 2D materials in high-density memristive crossbar arrays
for artificial neural networks (Invited talk)
Mario Lanza; King Abdullah University of Science and Technology, SAU

FR4P3-2 16:20
Metal-oxide memristors for Sensory applications (Invited talk)
Themis Prodromakis, University of Southampton, UK

FR4P3-3 16:40
Ge/Si Quantum Wires for Quantum Computing (Invited talk)Fei Gao1 , Jie-Yin Zhang1 , Jian-Huan Wang1 , Ming Ming1 , Ting Wang1 , Jian-Jun Zhang1 , Hannes Watzinger2 , Josip Kukučka2 ,Lada Vukušić2 , Georgios Katsaros2 , Ke Wang3 , Gang Xu3 , Hai-Ou Li3 , Guo-Ping Guo3; 1Institute of Physics, Chinese
Academy of Sciences, China, 2Institute of Science and Technology,Austria, 3University of Science and Technology of China,
China

FR4P3-4 17:00
Convertible Volatile and Non-Volatile Resistive Switching in a Self-Rectifying
Pt/TiOx/Ti Memristor
Zuheng Wu1,2, Xumeng Zhang1,2,4, Tuo Shi1,2,3, Yongzhou Wang1, Rui Wang1,2, Jian Lu1, Jinsong Wei1, Peiwen Zhang1 ,Qi Liu1,2,3,4; 1Institute of Microelectronics of Chinese Academy of Sciences, China; 2University of Chinese Academyof Sciences, China; 3Zhejiang Laboratory, China. 4Fudan University, China

FR4P3-5 17:20
Brain-Like Networks in Random Memristor Array Based on FORCE Training
Xumeng Zhang1, Zuheng Wu2, Rui Wang2, Jian Lu2, Jinsong Wei2, Qi Liu1, Ming Liu1,2; 1Fudan University, China,
2Institute of Microelectronics of Chinese Academy of Sciences, China

106

Sunday, April 11, 2021
16:00–17:40 ShuJin Hall
Session FR4P4: Novel Materials and Devices: Challenges andOpportunities in Semiconductor Manufacturing
Chair: Qi Liu, Fudan University
Co-Chair: John Dallesasse, University of Illinois at Urbana-Champaign

FR4P4-1 16:00
Integration of Resistive Switching Memory on Advanced Technology Nodes(Invited talk)Xiaoxin Xu; Institute of Microelectronics, CAS, China

FR4P4-2 16:20
Manufacture and Characterization of Ultrathin Flexible Chips (Invited talk)Kunwei Zheng1 , Shisheng Cai1 , Ying Chen2, 3, Yinji Ma1 , Xue Feng1; 1Tsinghua University, China,2Institute of Flexible
Electronics Technology of THU, China, 3Qiantang Science and Technology Innovation Center, China

FR4P4-3 16:40
Unified Compact Modeling of Charge Trapping in 1/f Noise, RTN and BTI(Invited talk)Gilson Wirth1 , Mauricio B. da Silva2 , Thiago H. Both3; 1Electrical Eng. Dept., UFRGS, Brazil, 2UFSM, Dept. of Electronics andComp., Brazil, 3UFPel, Centro de Engenharias, Brazil

FR4P4-4 17:00
Engineered substrate as a fast track to technology performance (Invited talk)Christophe Maleville; Soitec, France

FR4P4-5 17:20
Thermoelectric and Photoelectric Effects of 2D Bismuth for Flexible Electronics
Zhengrui Zhu1,2, Siyao Jiang1, Wen Zhong1, Zhaoying Dang1, Jiayi Chen1, Beibei Zhu1, Li Tao1,2; 1School of Materials
Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, 2Center for 2D Materials,
Southeast University, Nanjing, China107

Friday, April 9, 2021&
Saturday, April 10, 2021
18:30–20:30 WTHPE: Interactive Forum
Chair: Jianshi Tang, Tsinghua University
Co-Chair: Yi Li, Huazhong University of Science and Technology

WTHPE-001
Evaluation of MoS2(1-x)Te2x fabricated by different bottom-up methods
Yusuke Hibino1,2, Kota Yamazaki1, Yusuke Hashimoto1, Naomi Sawamoto3, Hideaki Machida4, Masato Ishikawa4, Hiroshi
Sudoh4, Hitoshi Wakabayashi4, Atsushi Ogura1,3; 1Meiji University, Japan,2JSPS Research Fellow, 3MREL, Japan ,4Gas Phase
Growth Ltd., Japan, 5Tokyo Tech, Japan

WTHPE-003
Uniform CoPt permanent magnetic film with high in-plane coercivity
Zhi Li1,2, Kun Zhang1,2, Weibin Chen1,3, Zitong Zhou1,2, Zhiqiang Cao1,2, Shaohua Yan1,2, Weisheng Zhao1,2, Qunwen Leng1,2,4;
1School of Integrated Circuit Science and Engineering, Beihang University, China 2Qingdao Research Institute, Beihang
University, China, 3Shandong University, China, 4Goertek Inc., China

WTHPE-004
Opto-electric resistive switching and synaptic emulation in lead-freeperovskite film
Swapnadeep Poddar, Yuting Zhang, Yiyi Zhu, Qianpeng Zhang, Zhiyong Fan; Hong Kong Univ. of Sci. and Tech, Hong Kong
SAR, China

WTHPE-005
Fabrication and characterization of Al0.8Sc0.2N piezoelectric thin films
Wenkui Lin 1,2, Wei Cheng 2, Yiqun Wang 2, Yuhua Sun 2, Qiang Zha 2, Chunhong Zeng 2, Qi Cui 2, Baoshun Zhang 2; 1Univ. ofSci. and Tech. of China, China, 2Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, China

WTHPE-006
Investigation into Electrical Conductivity and Electromagnetic Interference
Shielding Performance of Ag/TPU Hybrids Filled with Various Silver Fillers
Haorui Zhang1, 2, Zhiqiang Lin1, Tao Zhao1, Pengli Zhu1, Yougen Hu1, Rong Sun1; 1Shenzhen Institutes of Advanced
Technology, Chinese Academy of Sciences, China, 2Shenzhen College of Advanced Technology, University of Chinese
Academy of Sciences, China
108

WTHPE-007
Seed layer dependent bottom pinned magnetic tunnel junctions
Weibin Chen1,2, Shaohua Yan2,3, Yaodi Yang2 , Zhiqiang Cao2,3, Yixuan Lin1 Zitong Zhou2,3, Shishen Yan1，Qunwen leng2,3,4;
1Shandong University, China, 2Qingdao Research Institute, Beihang University, China, 3School of Integrated Circuit Scienceand Engineering, Beihang University, China, 4Goertek Inc, China

WTHPE-008
Achieving A Low Contact Resistivity of 0.11 Ω·mm for Ti5Al1 /TiN S/D Contact
on Al0.2Ga0.8N/AlN/GaN Structure without Barrier Recess
Yang Jiang1 , Zepeng Qiao1 , Fangzhou Du1 , Gaiying Yang5 , Mengya Fan1 , Xinyi Tang1 , Qing Wang1,2,6 , Hongyu Yu1,2,3,4;
1Southern University of Science and Technology,China, 2Shenzhen Institute of the Wide-bandgap Semiconductors,
China,3GaN Device Engineering Technology Research Center of Guangdong,China, 4Engineering Research Center ofIntegrated Circuits for Next-Generation Communications (Ministry of Education),China, 5Southern University of Scienceand Technology, China, 6Dongguan Institute of Opto-Electronics Peking University , China

WTHPE-009
Fabrication of E-mode all-GaN devices with self-terminated and self-alignment
process
Meihua Liu, Yufeng Jin; Peking University Shenzhen Graduate School, China

WTHPE-010
Research of etching process of Al0.8Sc0.2N based on ICP etching equipment
Xiaoyi Wang1,2, Wenkui Lin2,3, Xiaofan Yun2,4, Qiang Zha2, Haiou Li1, Baoshun Zhang2; 1Guilin University of Electronic
Technology, China, 2Suzhou Institute of Nano-Tech and NanoBionics, CAS, China,3Univ. of Sci. and Tech. of China, China,
4Nanjing University of Science and Technology, China

WTHPE-011
Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon
Nitride Film
Wen Lei1, Maojun Wang2, Xinnan Lin1, Meihua Liu1, Jiansheng Luo1, Yufeng Jin1; 1Peking University Shenzhen Graduate
School, China, 2Peking University, China

WTHPE-012
Development of HSQ replacement gate process for silicon nanowire MOS
devices
Kun Tu1,2, Xiaoqiao Dong2, Baotong Zhang2, Ru Huang2, Ming Li2, Peimin Lu1; 1Fuzhou University, China, 2Peking University,
China

109

WTHPE-013
Atomic Layer Deposition Deposited Al-Doped ZnO Films for Transistor
Application
Junchen Dong, Qi Li, Dedong Han, Yi Wang, Xing Zhang; Peking University, China

WTHPE-014
A RF Integrated Transformer with Fe3O4 Nanoparticles Film
Shifeng Li1, Kewen Zhu1, Lijun Ma1, Bang Wu1, Wanghui Zou2, Feng Liu1; 1Wuhan University, China, 2Changsha Universityof Science and Technology, China

WTHPE-015
Persistent Spin Helix-based Spin Field Effect Transistor
Zhizhong Chen, Jian Shi; Rensselaer Polytechnic Institute, USA

WTHPE-016
Performance Evaluation of Negative Capacitance Reconfigurable Field EffectTransistor for Sub 10 nm Integration
Zihan Sun1, Xianglong Li1, Yabin Sun1, Ziyu Liu2, Yanling Shi1 Xiaojin Li1; 1East China Normal University, China, 2Fudan
University, China

WTHPE-017
Role of Interfacial Traps at SiO2/Si Interface in Negative Capacitance Field
Effect Transistor (NCFET) Based on Transient Negative Capacitance (NC)
TheoryXiaoqing Sun1,2, Yuanyuan Zhang1,2, Jinjuan Xiang1,2, Kai Han3, Xiaolei Wang1,2,Wenwu Wang1,2; 1Institute ofMicroelectronics, Chinese Academy of Sciences,China, 2University of Chinese Academy of Sciences, China; 3Weifang
University , China

WTHPE-018
WS2 pMISFETs by Sputtering and Sulfur-Vapor Annealing with TiN/HfO2-TopGate-Stack, TiN Contact and Ultra-Thin Body and Box
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui,
Tetsuya Tatsumi, Shigetaka Tomiya; Hitoshi Wakabayashi Tokyo Institute of Technology, Japan

WTHPE-019
Self-started Piezoelectric Energy Conditioning System based on Electrostatic
Driving MEMS Switch
Jiahao Zhao1,2, Yingying Li2, Yiguo Chen2; 1Beijing Innovation Center for Future Chips, China, 2Department of Precision
Instrument, Tsinghua University, China

110

WTHPE-020
Evaluation of an Effective DC Solid State Circuit Breaker Based on CS-MCT
Yuxiao Yang, Wanjun Chen, Hongyang Zhang, Xiaorui Xu, Bo Zhang; University of Electronic Science and Technology ofChina (UESTC), China

WTHPE-021
High Performance β-Ga2O3 Vertical Rectifier With Double Step Structure
Termination Using Thermally Oxided TiOx Dielectrics
Zhaofeng Sun, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Zhihong Feng; Hebei Semiconductor ResearchInstitute, China

WTHPE-022
Reducing Reverse Leakage Current of AlGaN/GaN heterostructures Using Lowfluence Neutron Irradiation
Rong Wang1,2; 1ZJU-Hangzhou Global Scientific and Technological Innovation Center, China, 2Zhejiang University, China

WTHPE-023
Self-Reactive Etching of β-Ga2O3 for Fabricating Trench Schottky Barrier
DiodesWenbo Tang1,2, Xiaodong Zhang1,2, Tao He 2, Yongjian Ma 1,2, Xing Wei1,2, Yong Cai2, Gaohang He3, Sunan Ding3, Baoshun
Zhang2; 1University of Science and Technology of China, 2Suzhou Institute of Nano-Tech and NanoBionics, China, 3Suzhou
Institute of Nano-Tech and Nano-Bionics, China

WTHPE-024
Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in
ultrathin-barrier AlGaN/GaN MIS-HEMTs
Jiaqi He1,2, Wei-Chih Cheng1,4, Yang Jiang1 , Qing Wang1,3,5, Hongyu Yu1,3, 1 Southern University of Science and Technology,
China, 2The Hong Kong Polytechnic University, China,3Engineering Research Center of Integrated Circuits for NextGeneration Communications, Ministry of Education, China, 4The Hong Kong University of Science and Technology, China,
5Dongguan Institute of Opto-Electronics Peking University,China

WTHPE-025
Fabrication on n-Ga2O3/p-GaN diode by wet-etching lift-off and transfer-print
Yang Liu1, Lai Wang1, Yuantao Zhang2, Xin Dong2, Zhibiao Hao1, Yi Luo1, Changzheng Sun1, Yanjun Han1, Bing Xiong1, Jian
Wang1, Hongtao Li1; 1Tsinghua University, Beijing, China,2Jilin University, China

WTHPE-026
A DC-DC converter utilizing β-Ga2O3 Schottky barrier diodeWei Guo1, Guangzhong Jian2, Feihong Wu1, Kai Zhou1, Guangwei Xu1, Xuanze Zhou1, Qiming He2, Xiaolong Zhao1, Shibing
Long1; 1University of Science and Technology of China, China, 2Institute of Microelectronics of Chinese Academy of Sciences,
China
111

WTHPE-027
A High Voltage Superjunction MOSFET with Enhanced Reverse Recovery
Performance
Yun Xia, Wanjun Chen, Ruize Sun , Chao Liu, Zhaoji Li, Bo Zhang; University of Electronic Science and Technology of China,
China

WTHPE-028
A Dual Hole Barriers IGBT with High dV/dt Controllability and Extreme Low
EMI Noise
Shuyi Zhang1, Wanjun Chen1, 2, Xiaorui Xu1, Chao Liu1, Nan Chen1, Qi Zhou1, Bo Zhang1; 1University of Electronic Scienceand Technology of China (UESTC), China; 2Institute of Electronic and Information Engineering of UESTC in Guangdong,
China

WTHPE-029
Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes
Hehe Gong1, Xinxin Yu1,2, Yang Xu1, Jianjun Zhou2, Fangfang Ren1, Shulin Gu1, Rong Zhang1, Jiandong Ye1; 1Nanjing
University, China, 2Nanjing Electronic Devices Institute, China

WTHPE-030
A Fully Integrated CMOS Power Amplifier with a 133% Relative Bandwidth
upon Multilayer Inductors
Daming Ren1, Yiwei Zou1, Wei Zou2, Xuecheng Zou1; 1Huazhong University of Science and Technology,China, 2Hubei
University of Technology, China

WTHPE-031
Physics-based parameter extraction methodology for channel doping gradient(CDG) LDMOS transistors based on HiSIM-HV2 model
Shubham Patil, Kumari Neeraj Kaushal, Mandar S. Bhoir, Nihar R. Mohapatra; Electrical Engineering, IIT Gandhinagar,
Gandhinagar, India

WTHPE-032
A Compact Model for Relaxation Effect in Analog RRAM for Computation-inMemory System Design and Benchmark
Yuyi Liu, Bin Gao, Feng Xu, Wenqiang Zhang, Yue Xi, Jianshi Tang, He Qian; Tsinghua University, China

WTHPE-033
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic
Control in Short-Channel FinFETs
Jhang-Yan Ciou1, Sourav De1, Chien-Wei-Wang1, Wallace Lin1, Yao-Jen Lee2, Darsen Lu1; 1National Cheng Kung University,
Taiwan; 2Taiwan Semiconductor Research Institute, Taiwan.
112

WTHPE-036
Magnetic and electronic properties of Mn doped Sr/Si(111)-(3 × 2) HCC
surface
Jun Shuai Chai, Yuan Yuan Zhang, Xiao Lei Wang, Hao Xu, Jin Juan Xiang, Wen Wu Wang; Chinese Academy of Sciences,
China

WTHPE-037
Junctionless Omega-Gate MOSFET: A Short-channel Subthreshold Model and
Its Evaluation of Noise Margin for Subthreshold Logic Gate
Te-Kuang Chiang, Shen Wei-Cheng, Jiang Yu-Yu; National University of Kaohsiung, Taiwan

WTHPE-038
Modelling of multiple-channel influence on GaN based HEMTs
Xing Chen1, Dandan Lv2, Jinfeng Zhang2, Hong Zhou2, Zeyang Ren2, Chong Wang2, Yong Wu1, Dong Wang1, Yingyi Lei3,
Wenxiu Zeng1, Hong Zhang2, Jincheng Zhang2, Yue Hao2; 1Xidian-Wuhu Research Institute, China, 2Xidian University, China,
3Xi'an Microelectronic Technology Institute, China

WTHPE-039
A first-principles study of the interface property in oxide-based RRAM
Nianduan Lu1, Shang Ma12, Jiezhi Chen3, Qian Zhou2, Ling Li1, Ming Liu1; 1Institute of Microelectronics of Chinese Academyof Sciences, China,2 Beihang Univ., China, 3Shandong Univ., China

WTHPE-040
Ag/HfO2-based Threshold Switching Memristor as an Oscillatory Neuron
Qilin Hua1, Chunsheng Jiang2, Weiguo Hu1; 1Chinese Academy of Sciences, China, 2Chinese Academy of Engineering Physics,
China

WTHPE-041
A New Multi-Stimuli-Based Simulation Method for ESD Design Verification
Mengfu Di, Zijin Pan, Cheng Li, Albert Wang; University of California, Riverside, USA

WTHPE-042
Measurements and Simulation of Self-Heating in 40 nm SOI MOSFETs
Xiong Zhang, Payam Mehr, Dragica Vasileska, Trevor Thornton; Arizona State University, USA

WTHPE-043
Study on the theory and model of overcut effect of focused ion beam
sputtering etching process
Han Tian, Xing Yan; Southeast University, China

113

WTHPE-044
2D Structural Variation Impact on Electrostatic Performance of Sub-5nm
Nanosheet Transistors Subject to Strong Quantum Confinement
Haowen Luo, Xingsheng Wang, Xiangshui Miao; Huazhong University of Science and Technology, China

WTHPE-045
Effect of Screening and Depolarization in Cylindrical Ferroelectric Capacitor
Mengqi Fan, Pengying Chang, Gang Du, Jinfeng Kang, Xiaoyan Liu; Peking University, China

WTHPE-046
Oxygen Vacancy Formation Accompanied by Hf Oligomer in Amorphous-HfOxBased RRAM: a First Principles Study
Siyao Yang1, Bin Gao1, Feng Xu1, Qi Hu1, Jianshi Tang1, Jiezhi Chen2, He Qian1; 1Tsinghua University, China; 2Shandong
University, China

WTHPE-047
A Memristor-Based Neural Network Design for Associative Learning
Siqi Wang, Boyi Dong, Yaoyao Fu, Yuhui He, Xiangshui Miao; Huazhong University of Science and Technology, China

WTHPE-048
A Non-Resonant Recessed Gate AlGaN/GaN HEMT Terahertz Detector
Shasha Bai，BaoqingLiu，Kang Li，Linan Yang; Xidian University, China

WTHPE-050
Sudoku DTSCR ESD Array in 22nm FDSOICheng Li, Feilong Zhang, Zijin Pan, Mengfu Di, Chenkun Wang, Albert Wang; University of California, Riverside, USA

WTHPE-051
HTRB & THB Reliability Improvement Using Capping Layer in Power Discrete
Trench Devices
David Goh, W. J. Chen, F. Tahir, Shin Phay Lee, V. C. Ngwan; STMicroelectronics Pte Ltd, Singapore

WTHPE-052
Study of Anomalous Hot-Carrier Degradation of NMOS Transistor with 3DNAND Hydrogen-Rich Process
Chao Sun, Wu Tian, JianPing Wang, Wenshan Xu, Can Zhong, Guangyuan Liu, Changlong Hu, Ning Jiang, Lei Xue; Yangtze
Memory Technologies Co.Ltd, China

WTHPE-053
Soft Errors in Negative Capacitance FDSOI SRAMs
Govind Bajpai1,2, Aniket Gupta1,2, Om Prakash1, Yogesh S. Chauhan3, Hussam Amrouch4; 1Karlsruhe Institute of Technology,
Germany, 2National Institute of Technology Uttarakhand, India, 3 Indian Institute of Technology Kanpur, India, 4 Universityof Stuttgart, Germany
114

WTHPE-054
Internal-Distributed CDM ESD Protection
Mengfu Di, Zijin Pan, Cheng Li, Albert Wang; University of California, Riverside, USA

WTHPE-055
Error Correction Scheme for Reliable RRAM-Based In-Memory Computing
Yixuan Hu, Kaili Cheng, Zuodong Zhang, Runsheng Wang, Yuan Wang, Ru Huang; Peking University, China

WTHPE-056
Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping
Triplelevel-cell (TLC) NAND Flash Memory
Xiaotong Fang, Yachen Kong, Yifan Guo, Menghua Jia, Xuepeng Zhan, Yuan Li, Jiezhi Chen; Shandong University, China

WTHPE-057
Vertical TSV-Like Diode ESD Protection
Cheng Li1, Mengfu Di1, Zijin Pan1, Huaqiang Wu2, Albert Wang1; 1University of California, Riverside, USA, 2Tsinghua
University, China

WTHPE-058
A controller-embedded predictor for preventing unexpected failure in 3D
NAND flash
Yuqian Pan, Mingyang Gong, Haichun Zhang, Zhuo Chen, Zhenglin Liu; Huazhong University of Science and Technology,
China

WTHPE-059
A Study of the Electrical and Mechanical Reliability Properties of Suspended
Graphene NEMS Devices for ESD Protection Applications
Li Shen1, Yaoming Lv1, Lele Jiang 1, Zhenghui Kong 1, Yu Lu1,2, Qi Chen3, Albert Wang3, Yuhua Cheng1,4; 1Peking University,
China, 2Shanghai Xirun Technologies, Co. Ltd, China, 3University of California, Riverside, USA, 4School of ElectricalEngineering and Computer Science, Peking University, China

WTHPE-060
Development of a TLP System with a Novel Current Sampling Technique for
ESD Protection Applications
Yu Lu1,2, Yang Hong2, Yuhua Cheng2,3; 1Shanghai Xirun Technologies, Co. Ltd, China, 2Peking University, China,3 School of
EECS, Peking University, China

WTHPE-061
Low temperature curable polyimides for advanced package application
Yuying Sui 1,2, Jinhui Li1, Tao Wang1, Liang Shan1, Qiang Liu1, Guoping Zhang1; 1 Chinese Academy of Sciences, China, 2China
University of Petroleum, China.
115

WTHPE-062
The Influence of Pre-Layer Processing on the Signal Integrity of 5G High Frequency
Communication Multilayer LCP Lines
Haiqi Lai1, Tao Chen1, Guannan Yang1,2, Yu Zhang1,2, Chengqiang Cui1,2; 1Guangdong University of Technology,
China; 2Jihua Laboratory, Foshan, China

WTHPE-064
Low CTE Polyimide for Advanced Package Application
Ao Zhong, Jinhui Li, Liang Shan and Qiang Liu; Guoping Zhang; Rong Sun; Shenzhen Institutes of Advanced Technology,
Chinese Academy of Sciences, China

WTHPE-065
Crosstalk of octagonal TSV array arrangement based on differential signal
Jiang Han1, Ziyu Liu2, Ziyuan Zhu1, Lin Chen1, Qingqing Sun1; 1Southwest University, China; 2Fudan University, China

WTHPE-066
Stress adjusting for hillock size reduction in UTS CIS base on graphics analysis
Xianghua Hu, Guangzhi He, Xiaofang Gu, Qiliang Ni Huali; microelectronics Corp., China

WTHPE-067
A smart dummy flow in layout design for Xtacking Technology
Gavin Li1, Jet Jiang1, Frank Hou1, Shaojun Liu1, Zhengfang Liu2, Xuesheng Fan2, Chunshan Du2; 1Yangtze Memory
Technologies Co. Ltd., China, 2 Mentor Graphics (Shanghai) Electronics Technology Co., Ltd, China

WTHPE-068
Anomaly Detection and Analysis of FDC Data
Danli Gong1, Yiwen He 2, Xiong Shao 3; 1Shanghai Huali Intergrated Circuit Corporation, China, 2Shanghai Huali Intergrated
Circuit Corporation, China,3Shanghai Huali Intergrated Circuit Corporation, China

WTHPE-069
Focal Auxiliary Classifier Generative Adversarial Network for Defective Wafer
Pattern Recognition with Imbalanced Data
Jiahao Liu1, Fuzuo Zhang1, Bing Yang2, Fuquan Zhang2, Ying Gao2, Huangang Wang1; 1Tsinghua University, China,
2Semiconductor Technology Innovation Center (Beijing) Crop., China

WTHPE-070
Neuronal Firing Characteristics in the NbO2 based Mott Memristor
Xiaojian Zheng1, Xinyi Li1, Jianshi Tang1,2, Bin Gao1,2, He Qian1,2, Huaqiang Wu1,2; 1 Institute of Microelectronics, Beijing
Innovation Center for Future Chips (ICFC), Tsinghua University, China, 2Beijing National Research Center for Information
Science and Technology (BNRist), Tsinghua University, China

116

WTHPE-071
Core-Shell Dual-Gate Nanowire Synaptic Transistor with Short/Long-Term
Plasticity
Md. Hasan Raza Ansari1, Daehwan Kim1, Seongjae Cho1, Jong-Ho Lee2, Byung-Gook Park2; 1Gachon University, South Korea,
2Seoul National University, South Korea

WTHPE-072
HfO2/RuO2 Interface Mediated Oxygen Balance in Memristor: An Ab Initio
Study
Yun-Lai Zhu1, Jun-Hui Yuan1, Li-Heng Li1, Kan-Hao Xue1, Xiao-Min Cheng 1, Xiang-Shui Miao1; 1Huazhong University of
Science and Technology, China

WTHPE-073
In-Memory Hamming Distance Calculation Based on One-Transistor-TwoMemristor (1T2M) Structure
Zhizheng Zhang, Yi Li, Ling Yang, Jiancong Li, Xiangshui Miao; Huazhong University of Science and Technology, China

WTHPE-074
Optimal Design of DDR3 STT-MRAM Memory
Yueting Li1, Gefei Wang1,2, Kaihua Cao1, Qunwen Leng1, Weisheng Zhao1; 1Beihang University, China, 2Truth Memory Tech.
Co. Ltd, China

WTHPE-075
Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile
MemoryDominic Lane1, Peter Hodgson1, Richard Potter2 Manus Hayne1; 1Lancaster University, UK, 2University of Liverpool, UK

WTHPE-077
A cantilever-structured AlGaN/GaN HEMT for building a strain-controlled
platform
Xiao Cui1,2, Qilin Hua1,2, Keyu Ji1,3, Bingjun Wang1,3, Shuo Zhang1, Weiguo Hu1,2; 1Beijing Institute of Nanoenergy andNanosystems, Chinese Academy of Sciences, China, 2School of Nanoscience and Technology, University of Chinese
Academy of Sciences, China, 3Guangxi University, China

WTHPE-078
A Method of Forming Full-Wheatstone Bridge for Linear TMR Magnetic
Sensors
Dingsong Jiang1,2, Zhihong Lu1,2, Mingming Chen4, Jianzhong Yang1,2,3; 1Department of Precision Instrument, Tsinghua
University, China, 2The State Key Laboratory of Precision Measurement Technology & Instruments, Tsinghua University,
China, 3Innovation Center for Future Chips, China, 4University of Geosciences (Beijing), China
117

WTHPE-079
Tunable Sensing Performance of Linear Perpendicular TMR Sensor
Shaohua Yan1,2, Zitong Zhou1, Zhiqiang Cao1,2, Yaodi Yang2, Zhi Li1,2, Weibin Chen2,3, Qunwen Leng1,2,4, Weisheng Zhao1,2;
1School of Integrated Circuit Science and Engineering, Beihang University, China, 2Beihang-Goertek Joint Microelectronics
Institute, Qingdao Research Institute, Beihang University, China, 3 Shandong University, China, 4Goertek Inc., China

WTHPE-080
Visible Light Sensitivity Enhancement of CMOS Image Sensor with Pseudo High
Refractive Index Film Integrated by Directed Self-Assembly Process
I. Oshiyama, T. Shigetoshi, I. Mita, N. Sumitani, T. Oinoue, S. Saito, T. Okawa, Y. Ebiko, K. Yokochi, Y. Kitano, Y. Hagimoto,T. Hirano, H. Iwamoto; Sony Semiconductor Solutions Corp., Japan

WTHPE-081
Orientation Dependent Structural Facet Recognition Method in Anisotropic
Wet Etching on R-plane Single Crystal Sapphire
Jiabao Yao, Jin Qian, Xiaoli Qiu, Yan Xing; Southeast University, China

WTHPE-082
Pressure and Thermally Induced Spin Crossover in a 2D Iron(II) Coordination
Polymer {Fe[bipy(ttr)2]}n
Mengyun Yuan1, Ruixin Li1, Quanjun Li1, Ludmila Berezhnaya2, Hennagii Fylymonov3, Maksym Seredyuk4, Nikita Liedienov1,5,
José Antonio Real4, Georgiy Levchenko1,5; 1Jilin University, China, 2Donetsk Institute of Physics and Engineering, Ukraine,
3Southern Federal University, Russia, 4Universitat de Valencia, Spain, 5Donetsk Physical −Technical Institute, Ukraine

WTHPE-083
FBAR Magnetic Sensor Composed of CMOS Compatible Materials
Xiaofan Yun1,2, Wenkui Lin2,3, Xiaoyi Wang2,4, Zhongming Zeng2 , Xinping Zhang1 , Baoshun Zhang2; 1Nanjing University of
Science and Technology, China, 2 Suzhou Institute of Nano-Tech and NanoBionics, CAS, China, 3 Univ. of Sci. and Tech. ofChina, China, 4 Guilin University of Electronic Technology, China

WTHPE-084
UV-assisted High-sensitivity Room-temperature Pd-gated HEMT NO2 Gas
SensorChong Xing, Dongcheng Xie, Haochen Zhang, Kang Song, Lei Yang, Yue Sun, Danhao Wang, Shi Fang, Zhongyu Shi, Lei Xu,
Haiding Sun, Shibing Long; University of Science and Technology of China, China

WTHPE-085
A High Dynamic Range Capacitance-to-Digital Converter with Adaptive
Parasitic Compensation
Junjie Shi1, Xudong Qian1, Shuangxi Lin2, Xiaofei Chen1; 1Huazhong University of Science and Technology, China ,2Wuhan
Institute of Technology, China
118

WTHPE-086
Integrated Active Microfluidics using Flat Panel Display Technology with Two
Different Semiconductor Grade Polymers
Boshen Liang1,2, Grim Keulemans1, Dominika Wysocka1, Alexey Podkovskiy1, Lei Zhang1, Veronique Rochus1, Tim
Stakenborg1, Paul Heremans1,2, David Cheyns1; 1 Imec, Belgium, 2 KU Leuven, Belgium

WTHPE-087
Narrowband Photodetector by Integrating PTCDI-C13 J-aggregates with
Graphene
Beilei Sun1, Zefeng Chen1, Jian-Bin Xu13; 1 Department of Electronic Engineering, The Chinese University of Hong Kong,
Hong Kong SAR, China, 2Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong
Kong SAR, China

WTHPE-088
High-performance Photodetectors Based on 2D Defect-Rich Bi2O2Se
Nanosheets
Chuanhui Gong, Xianfu Wang; University of Electronic Science and Technology of China, China

WTHPE-089
Fabrication and Research of MSM UV Detectors with Different Electrode
Materials
Jun Liao, Cheng Wu, Rui Zhang, Yong Li, Tao Li; Shaoyang University, China

WTHPE-090
Design for a TE Mode Magneto-optical Circulator Based on Asymmetric Silicon
Slot Waveguides
Yucong Yang1, Shuyuan Liu1, Wei Yan1, Yan Zhang2, Jun Qin1, Longjiang Deng1, Lei Bi1; 1University of Electronic Science andTechnology of China, China, 2Chongqing United Microelectronics Center, China

WTHPE-091
Broadband frequency-doubled linearly chirped microwave waveformgeneration based on Fourier domain mode-locked optoelectronic oscillator
Guozheng Li1,2, Tengfei Hao1,2, Zengting Ge1,2, Wei Li1,2, Ming Li1,2; 1Chinese Academy of Sciences, China, 2University ofChinese Academy of Sciences, China

WTHPE-092
Disruptive Technology of Building Internet of Underwater Things: Laser-based
Underwater Solid-State Lighting
Daqi Shen1, Langyi Tao1, Jinghao Yu1, Pengfei Ye1, Zhengxuan Sheng1, Lvyang Zhou1, Mingmin Shi1, Shiliang Mei2, Xiang
Wan1, Xiaojuan Lian1, Xiaoyan Liu1, Yi Tong1; 1Nanjing University of Posts and Telecommunications, China, 2Fudan
University, China
119

WTHPE-093
Direct Patterning Copper Circuit on Textile for Wearable Electronics
Fei Li, Haijun Wang, Xiaofeng Shi, Yu Dai, Jie Zhang; Jiangnan University, China

WTHPE-094
Flexible Memristor based on Graphene-Silk Fibroin Bio-composite Paper
Xin Guo, Xinge Zhou, Changying Cao, Shan Wang, Quanhong Chang, Lei Huang; Shanghai Normal University, China

WTHPE-095
High-performance MXene-based pressure sensor for wearable electronics
Lili Wang1, Guozhen Shen2; 1Jilin University, China, 2University of Chinese Academy of Sciences, China

WTHPE-096
A high-performance flexible fiber based on CNTs for real-time remote controlof robots
Yinghui Li, Yucheng Lin, Shenshun Duan, Jun Wu, Wei Lei; Southeast University, China

WTHPE-097
High-performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin
ZrO2 gate dielectrics
Jie Zhang, Peng Cui, Guangyang Lin, Yuping Zeng; University of Delaware, USA

WTHPE-098
Flexible piezoresistive sensors with 3D CB/graphene conductive networks
Lijun Ma, Ye Gao, Shifeng Li, Xiao Lei, Xiaotian Li, Feng Liu; Wuhan University, China

WTHPE-099
Circuit Design and Experimental Verification of Low-voltage Organic Fieldeffect Transistor-based Common Source Amplifier
Li’ang Deng, Wei Tang, Lei Han, Yukun Huang, Xiaojun Guo; Shanghai Jiao Tong University, China

WTHPE-100
Cost-effective, mask-less, and high-throughput prototyping of flexible hybrid
electronic devices using dispense printing and conductive silver ink
Sahira Vasquez1, Mattia Petrelli1, Martina Costa Angeli1, Julio Costa2, Enrico Avancini1, Giuseppe Cantarella1, Niko
Münzenrieder1,2, Paolo Lugli1, Luisa Petti1; 1Free University of Bozen-Bolzano, Italy, 2University of Sussex, U.K

WTHPE-101
A 12-bit Fully Differential SAR ADC with a Novel Capacitor Mismatch
Calibration
Xizhu Peng1, Hanpeng Liu1, Yuke Liu1, He Tang1,2; 1University of Electronic Science and Technology of China, 2University ofElectronic Science and Technology of China, China
120

WTHPE-102
Lateral p−n Homojunction formed by Local Doping for High-Performance
Photodetector
Jiacheng Sun1,2, Junying Zhang2, Yuyan Wang1,2; 1Tsinghua University, China,2Beihang University, China

WTHPE-103
Nanoscale Inverters Enabled by a Facile Dry-Transfer Technique Capable of
Fast Prototyping of Emerging Two-Dimensional Electronic Devices
Yachun Liang, Jiankai Zhu, Fei Xiao, Bo Xu, Ting Wen, Song Wu, Jing Li, Juan Xia, Zenghui Wang; University of Electronic
Science and Technology of China, China

WTHPE-104
Light-modulated graphene/organic phototransistor with infrared polarity
switching
Jiayue Han1,2, Xinwei Han1,2, Chao Han1,2, Jun Gou1,2, Jun Wang1,2; 1University of Electronic Science and Technology of China,
China 2University of Electronic Science and Technology of China, China

WTHPE-105
FDSOI NCFET with Stepped Thickness Ferroelectric Layer
Mingyuan Gu1,2, Jiafei Yao1,2, Yufeng Guo1,2, Maolin Zhang1, Qicong Liang1,2, Jiayi Wu1, Jincheng Liu1, Dongxiang Xu1;
1Nanjing University of Posts and Telecommunications, China, 2National and Local Joint Engineering Laboratory of RF
Integration and Micro-Assembly Technology, China

WTHPE-106
Fabrication of p-MoTe2/n-MoS2 heterostructure and its electricalcharacterization
Xinyu Chen1, Yangye Sun2, Ling Tong1, Simeng Zhang1, Xiaoxi Li1, Jingyi Ma1, Xiaojiao Guo1, Minxing Zhang1, Zhengzong
Sun2, Wenzhong Bao1; 1 School of Microelectronics, Fudan University, China, 2Department of Chemistry, Fudan University,
China

WTHPE-107
Quantum dot formation on suspended graphene nanomesh by helium ion
beam milling technology
Fayong Liu1, Manoharan Muruganathan1, Shinichi Ogawa2, Yukinori Morita2, Zhongwang Wang1, Marek Schmidt1 , Hiroshi
Mizuta1,3; 1Japan Advanced Institute of Science and Technology, Japan, 2National Institute of Advanced Industrial Scienceand Technology, Japan, 3Hitachi Cambridge Laboratory, UK

121

WTHPE-108
Simulation and construction of physical reservoir based on gas
molecules/carbon nanotubes/polyoxometalate composite structure
Shuo Wu1, Wenli Zhou1,2, Yu Zhu1, Changsheng Chen1; 1Huazhong University of Science and Technology, China, 2Wuhan
National Laboratory of Optoelectronics, China

WTHPE-109
Memristive Combinational and Sequential Logic for In-memory Computing
Xiaodi Huang, Ling Yang, Yi Li, Xiangshui Miao; Huazhong University of Science and Technology, China

WTHPE-110
Tunable synaptic devices based on ambipolar MoTe2 transistor
Tingting Gao1, Xuefei Li1, Linxin Han1, Yanqing Wu1,2; 1Huazhong University of Science and Technology, China, 2Peking
University, China

WTHPE-111
A Flexible LIF Neuron Based on NbOx Memristors for Neural Interface
Applications
Jiaxue Zhu 1,3, Zuheng Wu1,3, Xumeng Zhang2, Yongzhou Wang1, Jian Lu1,4, Pei Chen1, Lingli Cheng1,3, Tuo Shi1,4 Qi Liu2;
1Institute of Microelectronics of Chinese Academy of Sciences, China; 2 Fudan University, China, 3University of Chinese
Academy of Sciences, China, 4Zhejiang Laboratory, China.

WTHPE-112
Self-adaptive Matrix Equation Solving in Analog Memory Array
Jiancong Li, Houji Zhou, Yi Li, Xiangshui Miao; Huazhong University of Science and Technology, China

WTHPE-113
Investigation of Non-Linear Selection Effect on RRAM based Neuromorphic
Computing Array with Passive Selective Element
Shengyu Bao, Zongwei Wang, Yaotian Ling, Zhizhen Yu, Yabo Qin, Yimao Cai, Ru Huang; Peking University, China

WTHPE-114
Impact of Non-Idealities in RRAMs on Hardware Spiking Neural Networks
Tejas Ketkar, Shubham Sahay; Indian Institute of Technology Kanpur, India

WTHPE-115
Memristive Stateful Logic with N-Modular Redundancy Error Correction
Design towards High Reliability
Xi Zhu, Hui Xu, Hongchang Long, Qingjiang Li, Zhiwei Li, Haijun Liu, Yinan Wang; National University of Defense Technology,
China

122

WTHPE-116
Efficient High Frequency Spin Wave Excitation with Undulating Ferromagnetic
Film
Yuchen Cai, Qiming Shao; The Hong Kong University of Science and Technology, Hong Kong, China

WTHPE-117
Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon
Nanomembrane and P3HT
Peiwen Huang1, Lei Yin1, Yayao Li1, Yue Wang1, Deren Yang1,2, Xiaodong Pi1,2; 1State Key Laboratory of Silicon Materials &School of Materials Science and Engineering, Zhejiang University, China,2Institute of Advanced Semiconductors, Hangzhou
Innovation Center, Zhejiang University, China

WTHPE-118
Chiplet-based System-on-Chip for Edge Artificial Intelligence
Mark Ping Chan Mok, Chi Hong Chan, Walter Chung Shui Chow, Yuzhong Jiao, Sha Li, Peng Luo, Yiu Kei Li, Meikei Ieong;
United Microelectronics Centre (Hong Kong) Ltd., Hong Kong, China

WTHPE-119
Low Power Mixed-Signal Binarized CNN Processor
Chi Hong Chan, Yuan Lei, Peng Luo, Sheng Lin, Xiao Huo, Yiu Kei Li, Mei Kei Ieong; United Microelectronics Centre (HongKong) Ltd., Hong Kong, China

WTHPE-120
A Ta2O5/ZnO Synaptic SE-FET for supervised learning in a crossbar
Xiaoyao Song, Ashwani Kumar, Maria Merlyne De Souza; University of Sheffield, UK

123

Special Events
1) Young Engineers’ Networking
Thursday, April 8, 2021
17:30–19:30 ShuJin Hall
Chair: He Tang, UESTC, China
Co-Chair: Qi Liu, Fudan University, China,
Co-Chair: John Dallesasse, University of Illinois at Urbana-Champaign, USA,
Co-Chair: Patrick Fay, University of Notre Dame, USA,
Co-Chair: Shuji Ikeda, tei Solutions Inc, Japan

The “Young Engineers’ Networking” event is designed for young engineers
and would-be engineers (e.g., students) to meet well-established engineers
and to network with fellow young engineers. The “Young” and “Would-be”
engineers will have a chance to directly interact with world famous professors,researchers and engineers in the Microelectronics, in an informal and friendly
setting, to hear their successful experiences and to obtain valuable advices.
This Networking event is open to all participating young and would-be
engineers onsite. Registration to EDTM2021 is not required for attending thisnetworking event. Light refreshments will be provided.

2) Women-in-Engineering (CWiE) Summit
The IEEE Chapters and Women-in-Engineering (CWiE) Summit, will be held
during EDTM2021, which will provide a forum for local IEEE volunteers andwomen students and professionals to meet together and share theirexperiences and ideas on education, research and career activities in area of
microelectronics, and offer valuable mentorship opportunities.
124Registration
1) In-Person Technical Sessions Registration allows attending all technicalsessions and includes tickets for daily lunch, banquet and 2 receptions. Virtual
registration can only attend the meetings online (no other benefits, such as
daily lunch, banquet and reception). Technical Sessions Registration means
registration for the technical sessions only, not including Tutorials/Short
Courses.

2) Tutorial or Short Course Registration is for attending tutorials or short courses(including lunch on the Tutorials/Short Courses day), but NOT attending any
conference technical sessions. Tutorial or Short Course registration does NOT
include tickets for the banquet and receptions.

3) Each accepted paper must be registered at an In-Person/ Non-Virtual rate(even for a virtual presentation)4) Each accepted paper must be registered by 2/15/2021 in order to be allowed
for presentation at EDTM2021 and be included in the Proceedings5) One in-Person/non-Virtual registration covers ONE paper only. For example, if
you have 2 papers, there must be 2 non-virtual registrations, each for one
paper.

6) Extra ticket for the Banquet and the two Receptions can be purchased. This
Banquet/Reception registration cannot be used to attend any technicalsession, tutorial or short course.
1257) Attendees for the IEEE China Chapters & Women-in-Engineering (CWiE)
Summit must register at an In-Person/Non-Virtual rate, which offers fullconference benefits (i.e., technical sessions, daily lunches, banquet andreceptions. But not including the Tutorials and Short Courses)
8) If you have any question, please send E-mail to nancy@tlan-group.com.

126

Registration Rates
In-Person Advanced(3/20/2021
by 24:00 Beijing Time)

In-Person On-Site(>3/20/2021)

VirtualTechnical Sessions
IEEE members
Non-members
IEEE Student members
Student Non-members
IEEE Life members$500.00$600.00$250.00$300.00$250.00$600.00$700.00$300.00$350.00$300.00$50.00$100.00$25.00$75.00$25.00

Tutorials
IEEE members
Non-members
IEEE Student members
Student Non-members
IEEE Life members$100.00$150.00$75.00$100.00$75.00$150.00$200.00$100.00$125.00$100.00$30.00$50.00$25.00$40.00$25.00

Short Courses
IEEE members
Non-members
IEEE Student members
Student Non-members
IEEE Life members$200.00$250.00$150.00$200.00$150.00$250.00$300.00$200.00$250.00$225.00$40.00$60.00$30.00$50.00$30.00CWiE Event
IEEE members
Non-members
IEEE Student members
Student Non-members
IEEE Life members$500.00$600.00$250.00$300.00$250.00$600.00$700.00$300.00$350.00$300.00

Extra Tickets
Welcome Reception
Business & Exhibition Night
Closing Banquet$50.00$50.00$70.00127

Visa Information
 Visa may be required to enter China.
 If needed, EDTM2021 can provide an Invitation Letter for your visa application.
 Please be aware of any travel restrictions amid the COVID-19 pandemic, and we are closely
monitoring the situation.
 Should you need any assistance, please contact us at nancy@tlan-group.com .

128

Speakers’ Instructions
Instructions for ORAL Presentations (including Invited)
Time Allocation for Presentations
Presentation Time
Discussion Time
Total
Plenary talk
40 min5 min
45min
Invited talk
15 min
5 min
20 minContributed talk
15 min
5 min
20 minTutorial & Short Course 60 min/lecture
10 min/lecture
70 min/lecture(Each T/SC track has 3 lectures for a total of 3.5 hours)

Preparing Your Presentation
Please use the provided PPT Template to prepare your oral presentations.
All speakers will use the laptop prepared by the conference for the presentation.
Windows 10 (English Version)
Applications: Power Point only (Version: 2007 or newer)
Fonts: Windows standard fonts
Use your own computer for presentation is NOT allowed.
Submit your PPT files in emails to your session co/chairs by 3/7/2021
Your PPT slides will be pre-loaded to the presenting computers
Please bring your back-up PPT in a USB memory stick.
Please be in the session room at least 15 minutes prior to your session to check your slides and report toyour session co/chairs.

Oral Presentations
You can control the slides using the provided laser pointer at the podium.
During presentations, you will be alerted by Time card and caution Bell.
After a lapse of ..

Caution

12 minutes

Show “3 Min” time card

Warning

14 minutes

Show “1 Min” time cardEnding talk

15 minutes

Bell one time

End of talk15 ~ 20 minutes

Q&A session

End of presentation

129

Virtual Presentation Formats
 EDTM2021 will go Hybrid. There will be a big in-Person meeting and you are welcome to come to Chengdu
and enjoy the REAL conference. In case travel is prohibited, Virtual presentation/participation is
supported.
1. Plenary Keynote Speakers：Live presentation on Zoom.
•

Please provide a pre‐recorded video as a back‐up•

Please check your time zone

2. Tutorial & Short Course Speakers: Live presentation on Zoom.
•

Please provide a pre‐recorded video as a back‐up•

Please check your time zone

3. Invited & Regular Oral Speakers: Presentations will be given by pre-recorded videos.
•

Please provide a pre‐recorded video as a back‐up•

Please upload your recorded videos to EDAS by 3/7/2021

Instructions for Recording PPT Presentation as a Video
Example with Microsoft Office 2019
Step 1: select Slide Show > Record Slide Show
Step 2: choose from two options:

Record from Current Slide

Record from Beginning

Step 3: when ready, select Record and start presentation/speaking
Step 4: manage your recording:Pause: to pause a recording

Stop: to end a recordingReplay: to replay a recordingPen, Highlighter, Eraser: use the pen, highlighter or eraser tools to mark up yourpresentation/recording

Step 5: Remove your recording: select Clear and choose from options
Step 6: save a recording as a video: select File > Export
Save your recording in MP4

Step 7: Upload your recorded presentation video to EDAS

130

Instructions for Poster Presentations (Session Code: WTHPE)
Poster Display and RemovalTime and Date
Set-up13:30 - 15:30, April 9
18:30 - 20:30, April 9
Presentation Time
18:30 - 20:30, April 10
Each/same poster paper will be presented TWICE in the same poster
session (WTHPE) during the above date/time.
Removal
09:00 - 15:00, April 11
Please use the provided poster Template to prepare your poster.
Include the paper number (#) at the top left corner of the poster panel.
The size of poster should be in A0 size with Portrait orientation.
Size (Width x Height): 841mm x 1189mm.
Poster sessions will be held in the Poster Area on the 3rd floor, next to the registration room (see the map
below).
All posters presenters are responsible for putting up and removing their posters on their designated board
during the times shown above.
Posters remaining after the removal time will be removed and disposed of by the conference.
Each/same poster paper will be presented TWICE in the same Poster Session (WTHPE) during the above
two dates/times.
One author is required to interactively present your poster paper onsite.
Presenters are asked to arrive at least 10 minutes ahead of the scheduled poster presentation time.
Presenters should use double side tape or Velcro tape to put up your poster.

131

Conference Venue Map132

Chengdu Local Transportation Information

Chengdu City Layout

133

Access to Venue - the Century City International Convention Centre
From North Railway Station:
By Subway: Take Line 1 from North Railway Station to Century City Station (15 stops);
out from Exit A of Century City Station, walk ~1069 meters to the Venue.
By Taxi: ~16 kilometers, ~40 minutes, costs ~CNY50
From East Chengdu Railway Station:
By Subway: Take Line 7 from East Chengdu Railway Station to South Railway Station(6 stops); change to Line 1 from South Railway Station to Century City Station (5stops); out from Exit A of Century City Station, walk ~1069 meters to the Venue.
By Taxi: ~16 kilometers, ~35 minutes, costs ~CNY40.
From South Railway Station:
By Subway: Take Line 1 from South Railway Station to Century City Station (5 stops);
out from Exit A of Century City Station, walk ~1069 meters to the Venue.
By Taxi: ~6 kilometers, ~15 minutes, costs ~CNY20.
From Chengdu Shuangliu International Airport (CTU):
By Subway: Take Line 10 from Terminal-2/Terminal-1 of Shuangliu International
Airport to Taipingyuan Station (4 stops); change to Line 7, from Taipingyuan Station to
South Railway Station (3 stops); then change to Line 1, from South Railway Station to
Century City Station (5 stops); out from Exit A of Century City Station, walk ~1069
meters to the Venue.
By Taxi: ~14 kilometers, ~40 minutes, costs ~CNY50.

134

Tourist Sites
KuanZhaiXiangZi (宽窄巷子). Very nice place with lots of hi-end tea houses, restaurants andlocal snacks. Great for relaxing. Streets date back from late Qing-Dynasty, but rebuilt
recently. Free government Wi-Fi in this place.

TianFu Square (天府广场) (Center of Chengdu). This square, overlooked by an enormous
Chairman Mao statue in the center of the city, has been spruced up. Every evening at dusk,
as well as at noontime, an elaborate music water show bursts out from the square's
fountains. Below the square is the hub of Chengdu's subway system.

135

People's Park (人民公园) (West of Tianfu Square, two blocksaway, 15 mins walking
distance.). This park is an important leisure place for Chengdu citizen. Every day, especiallythe holidays, the park is crowded with local people, hence, good for tourists to feel the real
local life. Just follw the music, your can easily found local folks singing and dancing groups.
You can also find people practicing Chinese calligraphy with water on the ground near amonument in the north-western corner of this park. There are many tea houses inside thepark where locals drink tea and play majong. The average price of one cup of tea is CNY¥10.
Do not forget to taste the famous Zhong's Dumpling(钟水饺) and various fancy local snaks ina Sichuan snak restaurant in the park, all at fair prices. This park is free to the public.

Sichuan Science and Technology Museum (四川科技馆) (Take a taxi or bus to Tianfu
Square and walk to the large building directly behind the Chairman Mao statue). This hugefour-storey museum is filled with interactive exhibits about science, aerodynamics, space,mathematics, robotics and physics. Children love the interactive displays and indoor
playground on the 4th floor. During weekdays, the museum may be crowded with local school
kids. Closed on Mondays. Entry fee CNY¥30, free for children.

Wuhouci Temple (武侯祠) (near Jinli Ancient Street, south-west of Tianfu Square). This
temple is built to commemorate Zhuge Liang(诸葛亮 ) who was the Premier of Shu (蜀)Kingdom in ancient Three Kingdoms time. He is famous in China for his magic master mindof predicting everything in future, particularly in war games.

136

Jinli Ancient Street (锦里古街). This neighborhood is part of the old city of Chengdu. Packed
with attractive hotels and small stores of old-fashion styles. Antiques are sold in different
stores. Jinli Street is very popular among both tourists and locals, especially at night, for thebars, restaurants, and nightclubs. You can find a lot of famous local snack food over there,
priced at CNY¥1-10. You can also tour the Wuhouci Temple nearby (entry fee CNY¥60, freewith a Panda Card). Don't forget to have a camera with you.

137

Jinsha Archaeological Site (金沙遗址) (Take Line 7、14、82、83、96、111、311、401
and 502, and get off at the north of Qingyang Avenue.Take Line 901 and get off at Jinsha
Relics Road.). Recently discovered ancient ruins featuring various tools and art pieces fromaround 3,000 years ago. The amount of unearthed items is just massive. They include
pottery, blades, jade items, building foundations and various golden art pieces.

Wenshu Temple (文殊院) (15 Wenshuyuan St, 成都文殊院街 15 号, off Renmin Zhong Rd).
This Tang Dynasty Buddhist temple is the most impressive, and perhaps also the mostworshipped, temple in Chengdu. It is dedicated to the Buddhist holy figure of Wisdom,
Wenshu Pusa (Manjusri Bodhisatva), and contains more than 450 Buddha statues and otherprecious relics. In addition to the halls and gardens, the temple also has a charming tea

138house that offers a taste of Chengdu life as it is frequented by locals as a place for chessgames, reading, knitting, or just chatting with friends. Entry fee is CNY¥5.

Qingyang Temple (青羊宫) (Palace of the Black Ram) (9 Xierduan, Ring Rd One, 一环路西二段 9 号). This Taoist temple is the oldest and biggest of its kind in the area, located in thewest of the downtown. This is a large and still-active temple built per the taoist philosophy.
While having a long history, the buildings are quite modern, featuring frequent shows. A
teahouse and a vegetarian restaurant can be found within the temple complex.

Chengdu Panda Research Base of Giant Panda Breeding（成都大熊猫繁育研究基地）(Take tourist bus 902 from Xinnanmen Bus Station, or bus 97 or 198, or take a taxi fromdowntown). This is the biggest facility of this kind in the world. Due to habitat destruction andother reasons, the giant panda is maybe the most famous but endangered animal. It is home
to some 60 giant pandas. It also hosts some red pandas and a colony of black-neckedcranes. The best time to visit is in the morning, when pandas are most active. Feeding time isaround 9:30-10:00am.

139

140

141