PMDXB950UPE

20 V, dual P-channel Trench MOSFET
30 June 2015

Product data sheet

1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.

2. Features and benefits
•
•
•
•
•

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω

3. Applications••••

Relay driver
High-speed line driver
High-side load switch
Switching circuits

4. Quick reference data
Table 1.

Quick reference data

SymbolParameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

-

-

-20

V

VGS

gate-source voltage

-8

-

8

V

ID

drain current

-

-

-500

mA

-

1.02

1.4

Ω

Per transistor

VGS = -4.5 V; Tamb = 25 °C[1]Static characteristics (per transistor)
RDSon

drain-source on-state
resistance[1]

VGS = -4.5 V; ID = -500 mA; Tj = 25 °C

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for2

drain 1 cm .

PMDXB950UPE

Nexperia

20 V, dual P-channel Trench MOSFET

5. Pinning information
Table 2.

Pinning information

Pin

Symbol Description

1

S1

Simplified outline

Graphic symbol

source TR1

D2

D1

1

6

2

G1

gate TR1

3

D2

drain TR2

4

S2

source TR25G2gate TR2

6

D1

drain TR1

Transparent top view

7

D1

drain TR1

DFN1010B-6 (SOT1216)

8

D2drain TR2

7

2
3

G1

5
8

G2

4
S1

S2

017aaa260

6. Ordering information
Table 3.

Ordering information

Type number

Package

PMDXB950UPE

Name

Description

Version

DFN1010B-6

DFN1010B-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals

SOT1216

7. Marking
Table 4.

Marking codes

Type number

Marking code

PMDXB950UPE

10 10 00

MARKING CODE
(EXAMPLE)

READINGDIRECTION

MARK-FREE AREA

PIN 1
INDICATION MARKREADING EXAMPLE:

YEAR DATE
CODE

11
01
10

Fig. 1.

aaa-007665

DFN1010B-6 (SOT1216) binary marking code description

PMDXB950UPE

Product data sheet

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Nexperia

20 V, dual P-channel Trench MOSFET

8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

-

-20

V

VGS

gate-source voltage

-8

8

V

ID

drain current

Per transistor

VGS = -4.5 V; Tamb = 25 °C

[1]

-

-500

mA

VGS = -4.5 V; Tamb = 100 °C

[1]

-

-300

mA

-

-2

A

[2]

-

265

mW

[1]

-

380

mW

-

4025

mW

-

-350

mA

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

Ptot

total power dissipation

Tamb = 25 °C
Tsp = 25 °C

Source-drain diodeIS

source current

Tamb = 25 °C[1]

Per device
Tjjunction temperature

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

PMDXB950UPE

Product data sheet[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for[2]

drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

2

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Nexperia

20 V, dual P-channel Trench MOSFET

017aaa123

120

017aaa124

120

Pder
(%)

Ider
(%)

80

80

40

40

0
- 75

Fig. 2.

- 25

25

75

125

Tj (°C)

0
- 75

175

Normalized total power dissipation as afunction of junction temperature

Fig. 3.

- 25

25

75

125

Tj (°C)175

Normalized continuous drain current as afunction of junction temperature

aaa-006901

-10
ID
(A)

Limit RDSon = VDS/ID

tp =
10 µs

-1
100 µs1 ms-10-1

DC; Tsp = 25 °C

10 ms

DC; Tamb = 25 °C;
drain mounting pad 1 cm2
-10-2
-10-1

-1

100 ms-10-102

VDS (V)

IDM = single pulse
Fig. 4.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage

9. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameter

Conditions

thermal resistancefrom junction toambient

in free air

Min

Typ

Max

Unit

[1]

-

410

475

K/W

[2]

-

285

330

K/W

Per transistor
Rth(j-a)

PMDXB950UPE

Product data sheet

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Nexperia

20 V, dual P-channel Trench MOSFET
SymbolParameter

Rth(j-sp)

thermal resistancefrom junction to solder
point
[1]
[2]

Conditions

Min

Typ

Max

Unit

-

27

31

K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
aaa-006902

103
duty cycle = 1
Zth(j-a)
(K/W)

0.75
0.5

102

0.25

0.33
0.2

0.1
0.05
0

0.02
0.01

10
10-3

10-2

10-1

1

10

102

tp (s)

103

FR4 PCB, standard footprint
Fig. 5.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006903

103

Zth(j-a)(K/W)

duty cycle = 1
0.75
0.5

102

0.25

0.33
0.2

0.1
0.05
0
10
10-3

0.02
0.01

10-2

10-1

FR4 PCB, mounting pad for drain 1 cm
Fig. 6.

1

10

102

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMDXB950UPE

Product data sheet

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20 V, dual P-channel Trench MOSFET

10. Characteristics
Table 7.

Characteristics

SymbolParameter

Conditions

Min

Typ

Max

Unit

Static characteristics (per transistor)
V(BR)DSS

drain-source
breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-20

-

-

V

VGSth

gate-source thresholdvoltage

ID = -250 µA; VDS = VGS; Tj = 25 °C

-0.45

-0.7

-0.95

V

IDSS

drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 25 °C

-

-

-1

µA

VDS = -20 V; VGS = 0 V; Tj = 150 °C

-

-

-10

µA

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

-

10

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

-

-10

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

-

1

µA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

-

-1

µA

VGS = -4.5 V; ID = -500 mA; Tj = 25 °C

-

1.02

1.4

Ω

VGS = -4.5 V; ID = -500 mA; Tj = 150 °C

-

1.54

2.1

Ω

VGS = -2.5 V; ID = -200 mA; Tj = 25 °C

-

1.27

2.2

Ω

VGS = -1.8 V; ID = -40 mA; Tj = 25 °C

-

1.7

3.3

Ω

VGS = -1.5 V; ID = -10 mA; Tj = 25 °C

-

2.3

5

Ω

VGS = -1.2 V; ID = -1 mA; Tj = 25 °C

-

3.5

-

Ω

VDS = -10 V; ID = -500 mA; Tj = 25 °C

-

480

-

mS

IGSS

RDSon

gfs

gate leakage current

drain-source on-state
resistanceforwardtransconductance

Dynamic characteristics (per transistor)
QG(tot)total gate charge

VDS = -10 V; ID = -450 mA;

-

1.19

2.1

nC

QGS

gate-source charge

VGS = -4.5 V; Tj = 25 °C

-

0.17

-

nC

QGD

gate-drain charge

-

0.1

-

nC

Ciss

input capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

-

43

-

pF

Coss

output capacitance

Tj = 25 °C

-

14

-

pF

Crss

reverse transfer
capacitance

-

8

-

pF

td(on)

turn-on delay time

VDS = -10 V; ID = -0.45 A; RL = 22 Ω;

-

2.3

-

ns

tr

rise time

VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C

-

5

-

ns

td(off)turn-off delay time

-

13.5

-

ns

tf

fall time

-

6

-

ns

-

-0.7

-1.2

V

Source-drain diode (per transistor)
VSD

source-drain voltage

PMDXB950UPE

Product data sheet

IS = -115 mA; VGS = 0 V; Tj = 25 °C
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Nexperia

20 V, dual P-channel Trench MOSFET

aaa-006904-2.0
VGS = -4.5 V

ID(A)

aaa-006905

-10-2
ID
(A)

-3.5 V

-1.5

-10-3

-3 V
min
-1.0

-2.5 V

-10-4

-0.5

-1.8 V

-10-5

typ

max

-1.2 V0.0

Fig. 7.

0

-1

-2

-3

VDS (V)

-10-6
0.0

-4

-0.5

-1.0

VGS (V)-1.5

Tj = 25 °C

Tj = 25 °C; VDS = -5 V

Output characteristics: drain current as a
Fig. 8.
function of drain-source voltage; typical values

Sub-threshold drain current as a function ofgate-source voltage

aaa-006906

2.0
RDSon
(Ω)

-1.8 V-2.2 V

aaa-006907

5
RDSon
(Ω)

-2.5 V

4

1.5

-3 V
3

-3.5 V
1.0
VGS = -4.5 V

2

0.5

0.0
0.0

1

-0.5

-1.0

-1.5

ID (V)0-2.0

Tj = 25 °C
Fig. 9.

Product data sheet

Tj = 25 °C

0

-1

-2

-3

-4

VGS (V)-5

ID = -0.5 A

Drain-source on-state resistance as a functionof drain current; typical values

PMDXB950UPE

Tj = 150 °C

Fig. 10. Drain-source on-state resistance as a functionof gate-source voltage; typical values

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Nexperia

20 V, dual P-channel Trench MOSFET

aaa-006908-1.00

aaa-006909

1.50

ID
(A)

a
Tj = 25 °C-0.75

Tj = 150 °C

1.25

-0.50

1.00

-0.25

0.75

0.00

0

-1

-2

-3

VGS (V)

0.50
-60

-4

VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

60

120

Tj (°C)180

Fig. 12. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvaluesaaa-006910

-1.5

0

aaa-006911

102
Ciss

VGS(th)
(V)

C
(pF)

-1.0

Coss

max
10

typ

Crss

-0.5
min

0.0
-60

0

60

120

Tj (°C)

1
-10-1

180

ID = -0.25 mA; VDS = VGS

Product data sheet-10

VDS (V)-102

f = 1 MHz; VGS = 0 V

Fig. 13. Gate-source threshold voltage as a function ofjunction temperature

PMDXB950UPE-1Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesAll information provided in this document is subject to legal disclaimers.

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Nexperia

20 V, dual P-channel Trench MOSFET

aaa-016469

-5

VDS

VGS
(V)

ID

-4

VGS(pl)-3

VGS(th)
VGS

-2

QGS1

QGS2

QGS

-1

QGD
QG(tot)017aaa137

0

0

0.2

0.4

QG (nC)

Fig. 16. MOSFET transistor: Gate charge waveformdefinitions

0.6

ID = -0.5 A; VDS = -10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gatecharge; typical values

aaa-006913

-2.0
IS
(A)
-1.5

-1.0

Tj = 150 °C

-0.5

0.0
0.0

-0.5

Tj = 25 °C

-1.0

-1.5

VSD (V)-2.0

VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values

11. Test informationP

t2

duty cycle δ =

t1
t2

t1

t

006aaa812

Fig. 18. Duty cycle definition
PMDXB950UPE

Product data sheet

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20 V, dual P-channel Trench MOSFET

12. Package outline
0.35

0.35
0.15
0.23

1

2

0.125
0.205

0.22
0.30

0.95
1.05

6
0.04
max

3

0.34
0.40

Dimensions in mm

5

4
0.32
0.40

0.275 0.275
1.05
1.15

13-03-05

Fig. 19. Package outline DFN1010B-6 (SOT1216)

PMDXB950UPE

Product data sheet

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20 V, dual P-channel Trench MOSFET

13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package

SOT1216

0.9
0.35

0.35

0.15 0.2 (6x) 0.15

1.3

1.2

0.35

0.25

0.5

0.6

0.35

0.25

1.1

0.3 (6x)1
1.35

solder landsolder land plus solder paste

occupied area

solder resist

Dimensions in mm
Issue date

13-03-06
14-07-28

sot1216_fr

Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PMDXB950UPE

Product data sheet

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20 V, dual P-channel Trench MOSFET

14. Revision history
Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PMDXB950UPE v.2

20150630

Product data sheet-

PMDXB950UPE v.1

Modification:•

PMDXB950UPE v.1

20130910--

PMDXB950UPE

Product data sheet

Change of binary marking code position.
Product data sheet

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PMDXB950UPE

Nexperia

20 V, dual P-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

15. Legal information
15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Document
status [1][2]Product
status [3]Objective[short] data
sheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] data
sheet

Qualification

This document contains data from thepreliminary specification.

Product[short] data
sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Definition

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.

15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in the
Product data sheet.

15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an information
source outside of Nexperia.

PMDXB950UPE

Product data sheet

Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the

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20 V, dual P-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

15.4 Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

PMDXB950UPE

Product data sheet

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20 V, dual P-channel Trench MOSFET

16. Contents
1

General description ............................................... 1

2

Features and benefits ............................................1

3

Applications ........................................................... 1

4

Quick reference data ............................................. 1

5

Pinning information ............................................... 2

6

Ordering information ............................................. 2

7

Marking ................................................................... 2

8

Limiting values .......................................................3

9

Thermal characteristics .........................................4

10

Characteristics ....................................................... 6

11

Test information ..................................................... 9

12

Package outline ................................................... 10

13

Soldering .............................................................. 11

14

Revision history ................................................... 12

15
15.1
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Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 June 2015

PMDXB950UPE

Product data sheet

All information provided in this document is subject to legal disclaimers.

30 June 2015

© Nexperia B.V. 2017. All rights reserved

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