BUK6Y33-60P

60 V, P-channel Trench MOSFET
21 January 2021

Product data sheet

1. General description
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device(SMD) plastic package using Trench MOSFET technology.
This product has been designed and qualified to AEC-Q101 standard for use in high-performance
automotive applications such as reverse battery protection.

2. Features and benefits••••

High thermal power dissipation capability
Suitable for thermally demanding environments due to 175 °C rating
Trench MOSFET technology
AEC-Q101 qualified

3. Applications••••

Reverse battery protection
Power management
High-side load switch
Motor drive

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

VDS

drain-source voltage

Tj = 25 °C

VGS

gate-source voltage

IDdrain current

Ptot

total power dissipation

Min

Typ

Max

Unit

-

-

-60

V

-20

-

20

V

VGS = -10 V; Tmb = 25 °C

-

-

-30

A

Tmb = 25 °C

-

-

110

W

VGS = -10 V; ID = -7 A; Tj = 25 °C

-

26

33

mΩ

[1]

Static characteristics
RDSon
[1]

drain-source on-state
resistance

VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C

BUK6Y33-60P

Nexperia

60 V, P-channel Trench MOSFET

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription

Simplified outline

1

S

source2Ssource3Ssource

4

G

gate

mb

D

mounting base; connected
to drainGraphic symbol
D

mb

G
S

1 2 3 4

LFPAK56; PowerSO8 (SOT669)

017aaa094

6. Ordering information
Table 3. Ordering information
Type number
Package
BUK6Y33-60P

Name

Description

VersionLFPAK56;
Power-SO8

plastic, single-ended surface-mounted package; 4 terminals

SOT6697. Marking
Table 4. Marking codes
Type number

Marking code

BUK6Y33-60P

6Y3360P

BUK6Y33-60P

Product data sheet

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60 V, P-channel Trench MOSFET

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

-

-60

V

VGS

gate-source voltage

-20

20

V

ID

drain current

VGS = -10 V; Tmb = 25 °C

-

-30

A

VGS = -10 V; Tmb = 100 °C

-

-21

A

[1]

IDM

peak drain current

single pulse; tp ≤ 10 µs; Tmb = 25 °C

-

-120

A

Ptot

total power dissipation

Tmb = 25 °C

-

110

W

Tj

junction temperature

-55

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

Source-drain diodeIS

source current

Tmb = 25 °C

-

-30

A

ISM

peak source current

single pulse; tp ≤ 10 µs; Tmb = 25 °C

-

-120

A

-

1000

V

-

85

mJ

ESD maximum rating
VESD

electrostatic discharge
voltage

HBM[2]

Avalanche ruggedness
EDS(AL)S[1][2]

non-repetitive drainTj(init) = 25 °C; ID = -2.8 A; DUT insource avalanche energy avalanche (unclamped)

VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C
Measured between all pins.
aaa-030121

120
Pder
(%)

Ider
(%)

80

80

40

40

0
-75

Fig. 1.

aaa-030122

120

25

125

Tmb (°C)

Normalized total power dissipation as afunction of mounting base temperature

BUK6Y33-60P

Product data sheet

0
-75

225

Fig. 2.

125

Tmb (°C)

225

Normalized continuous drain current as afunction of mounting base temperature

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60 V, P-channel Trench MOSFET
aaa-030711

-103
ID
(A)

Limit RDSon = VDS/ID
tp =
10 µs

-102

100 µs-10

DC; Tmb = 25 °C

-1

1 ms

-10-1

10 ms
100 ms-10-2

Fig. 3.

-1

-10

-102

VDS (V)

Safe operating area; junction to mounting base; continuous and peak drain currents as a function ofdrain-source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-mb)

Conditions

thermal resistance fromjunction to mounting
base

Min

Typ

Max

Unit

-

1.1

1.4

K/W

aaa-031187

10
Zth(j-mb)(K/W)
duty cycle = 1
1

0.70

0.50

0.30
0.10
10-1

0.05
0.01

10-2
10-5

Fig. 4.

0.02

10-4

10-3

10-2

10-1

tp (s)

1

Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK6Y33-60P

Product data sheet

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60 V, P-channel Trench MOSFET

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

Static characteristics
V(BR)DSS

drain-source
breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-60

-

-

V

VGSth

gate-source thresholdvoltage

ID = -250 µA; VDS=VGS; Tj = 25 °C

-1.5

-2

-3

V

IDSS

drain leakage current

VDS = -60 V; VGS = 0 V; Tj = 25 °C

-

-

-1

µA

VDS = -60 V; VGS = 0 V; Tj = 125 °C

-

-

-10

µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-

-

-100

nA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

VGS = -10 V; ID = -7 A; Tj = 25 °C

-

26

33

mΩ

VGS = -10 V; ID = -7 A; Tj = 175 °C

-

55

69

mΩ

VGS = -4.5 V; ID = -6.7 A; Tj = 25 °C

-

30

36

mΩ

IGSS
RDSon

gate leakage current
drain-source on-state
resistancegfs

forwardtransconductance

VDS = -10 V; ID = -4.8 A; Tj = 25 °C

-

99

-

S

RG

gate resistancef = 1 MHz

-

6.1

-

Ω

VDS = -30 V; ID = -7 A; VGS = -10 V;
Tj = 25 °C

-

46

69

nC

-

7.3

-

nC

-

9.4

-

nC

-

2590

-

pF

-

202

-

pF

-

118

-

pF

-

9

-

ns

-

16

-

ns

Dynamic characteristics
QG(tot)total gate charge

QGSgate-source charge

QGD

gate-drain charge

Cissinput capacitanceCossoutput capacitanceCrssreverse transfer
capacitancetd(on)

turn-on delay timetrrise timetd(off)turn-off delay time

-

81

-

ns

tf

fall time

-

310

-

ns

VDS = -30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C

VDS = -30 V; ID = -7 A; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C

Source-drain diodeVSD

source-drain voltage

IS = -30 A; VGS = 0 V; Tj = 25 °C

-

-0.7

-1.2

V

trr

reverse recovery time

-

32

-

ns

Qr

recovered charge

IS = -30 A; dIS/dt = 100 A/µs;
VGS = -10 V; VDS = -30 V; Tj = 25 °C

-

18

-

nC

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Product data sheet

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60 V, P-channel Trench MOSFET
aaa-030712

-50
ID
(A)
-40

-4.5 V

aaa-030713-10-3

VGS = -10 V

ID(A)-3.8 V

-10-4
-30

-20

-3.4 V

Min

Typ

-1.5

-2.0

Max

-10-5

-3.2 V-10-3.0 V-2.8 V0

Fig. 5.

0

-1

-2

-3

VDS (V)

-10-6

-4

-0.5

-1.0

-2.5

-3.0
-3.5
VGS (V)Tj = 25 °C

VDS = -5 V; Tj = 25 °C

Output characteristics: drain current as a
Fig. 6.
function of drain-source voltage; typical values

Sub-threshold drain current as a function ofgate-source voltage

aaa-030714

200

RDSon
(mΩ)
150

-3.2 V140-3.4 V

120
100

100

-3.8 V80

Tj = 175 °C

60

50

40

-4.5 V

20

VGS = -10 V0

aaa-030715

200-3.0 VRDSon180
(mΩ)
160

0

-10

-20

-30

ID (A)

Tj = 25 °C
0-40

Tj = 25 °C
Fig. 7.

0

Product data sheet

-1

-2

-3

-4

VGS (V)-5

ID = -6.5 A

Drain-source on-state resistance as a functionof drain current; typical values

BUK6Y33-60P

0Fig. 8.

Drain-source on-state resistance as a functionof gate-source voltage; typical values

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60 V, P-channel Trench MOSFET
aaa-030716-20

aaa-030717

2.5

ID
(A)

a
2.0

-15

1.5
-10
1.0
-5

0.5

Tj = 175 °C
Tj = 25 °C

0

0

-1

-2

-3

VGS (V)

0
-60

-4

0

60

120

Tj (°C)180

VDS = -10 V
Fig. 9.

Transfer characteristics: drain current as afunction of gate-source voltage; typical values

aaa-030718-3.5
VGS(th)(V)-3.0

Fig. 10. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvaluesaaa-030719

104

Max

C
(pF)

-2.5

Ciss

-2.0

Typ

-1.5

Min

103

-1.0
Coss

-0.5
0
-60

0

60

120

Tj (°C)

102
-10-1

180

ID = -250 μA; VDS = VGS

Product data sheet

-1

-10

VDS (V)-102

f = 1 MHz; VGS = 0 V

Fig. 11. Gate-source threshold voltage as a function ofjunction temperature

BUK6Y33-60P

Crss

Fig. 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesAll information provided in this document is subject to legal disclaimers.

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BUK6Y33-60P

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60 V, P-channel Trench MOSFET
aaa-030720

-10
VGS
(V)

VDS

-8

ID

-6

VGS(pl)-4
VGS(th)
VGS

-2

0

QGS2
QGS1

0

10

20

30

QGS

40
50
QG (nC)VDS = -30 V; ID = -10.8 A; Tj = 25 °C

003aaa508

Fig. 14. Gate charge waveform definitions

Fig. 13. Gate-source voltage as a function of gatecharge; typical values
IS
(A)

QGD
QG(tot)aaa-030721

-8
-7
-6
-5
-4
-3
-2
Tj = 175 °C

-1
0

0

-0.4

Tj = 25 °C-0.8

VSD (V)-1.2

VGS = 0 V
Fig. 15. Source current as a function of source-drain voltage; typical values

BUK6Y33-60P

Product data sheet

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60 V, P-channel Trench MOSFET

11. Test informationP

t2

duty cycle δ =

t1
t2

t1

t

006aaa812

Fig. 16. Duty cycle definition

Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

BUK6Y33-60P

Product data sheet

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60 V, P-channel Trench MOSFET

12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads

E

A2

A

SOT669

C

c2

b2

E1
b3

L1
mounting
base

b4
D1

D

H

L2

1

2

3

e

4
w

b

A

X

c

1/2 e

A

(A3)
A1

C
q
L

detail X

0

y C

θ

5 mm

8°

scale

0°

Dimensions (mm are the original dimensions)
Unit(1)
mm

A

A1

A2

A3

b

c

c2

D(1) D1(1) E(1) E1(1)

b2

b3

b4

max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62

2.2

0.9

0.25 0.30 4.10 4.20

5.0

3.3

2.0

0.7

0.19 0.24 3.80

4.8

3.1

e
1.27

H

L

L1

L2

6.2

0.85

1.3

1.3

5.8

0.40

0.8

0.8

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outlineversion
SOT669References
IEC

JEDEC

JEITA

w

y

0.25

0.1

sot669_po

Europeanprojection

Issue date
11-03-25
13-02-27

MO-235

Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)

BUK6Y33-60P

Product data sheet

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60 V, P-channel Trench MOSFET

13. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

BUK6Y33-60P v.3

20210121

Product data sheet-

BUK6Y33-60P v.2

Modifications:•BUK6Y33-60P v.2

20200318

Product data sheet-

BUK6Y33-60P v.1

BUK6Y33-60P v.1

20200316

Product data sheet--

BUK6Y33-60P

Product data sheet

Chapter "Characteristics": Typo correction at parameter tf. Correction of the conditions for thesource-drain diode parameters VSD, trr, Qr.

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BUK6Y33-60P

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60 V, P-channel Trench MOSFET
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

14. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
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In no event shall Nexperia be liable for any indirect, incidental, punitive,
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profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
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Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
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agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems or

BUK6Y33-60P

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60 V, P-channel Trench MOSFET

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 9
12. Package outline........................................................ 10
13. Revision history........................................................11
14. Legal information......................................................12© Nexperia B.V. 2021. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 January 2021

BUK6Y33-60P

Product data sheet

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