SGN2833-150L-R

GaN-HEMT for S-band Radar◼ Features••••••High Power: 190W(Typ.) @ PIN=38dBm
High Efficiency: 62%(Typ.) @ PIN=38dBm
Broad Band: 2.85 to 3.3GHz
Impedance Matched ZIN/ZOUT = 50 ohm
Long Pulse/High Duty Capable
Hermetically Sealed Package: IV-Package◼ Description
Sumitomo Electric’s GaN-HEMT SGN2833-150L-R offers high power,
high efficiency and greater consistency covering 2.85 to 3.3 GHz forS-band radar applications with 50V and long pulse/high dutyoperation.

ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
RatingItem
SymbolVDS
55
Operating Voltage
VDrain-Source Voltage
250 @ VGS-10V
DSVGS
-15
Gate-Source Voltage
Tstg-55 to +125
Storage Temperature
Tch+250
Channel Temperature
RECOMMENDED OPERATING CONDITION
Item
SymbolVDS
Drain-Source Voltage
IGF
Forward Gate Current
IGR
Reverse Gate Current
Tch-peak
Peak Channel Temperature
Pout
Output Power

Unit
V
V
V
deg.C
deg.C
Limit
<=50<=76>=-5.2<=200<=P5dB

Condition
Rg=12ohm
Rg=12ohm

Unit
VmA
mA
deg.C
dBm

ELECTRICAL CHARACTERISTICS (Case Temperature T c=25 deg.C)
Item

SymbolVP

VDS=50V, IDS=28mA

Freq.
Pout

VDS=50V-typ.

Pinch-off Voltage
Frequency Range
Output Power
Drain Efficiency
Power Gain
Gain Flatness
Load Mismatch Ruggedness
Thermal Resistance

DEGP
GF
VSWR
Rth

CASE STYLE
RoHS ComplianceIV
YES

Edition 1.0
Jul. 2024

Condition

IDS(DC) =0.5A-typ.
Pulse Width=200μsec.
Duty=10%
Pin =38dBm
Channel to Case at 45W PDC-1-Min.
-3.45
2.85
51.8
13.8
-Limit
Typ.
-3.00
52.8
62.0
14.8
0.7
10:1
1.1

Max.
-2.45
3.3
1.5
1.3

UnitVGHzdBm%dBdB
deg.C/WSGN2833-150L-R

GaN-HEMT for S-band Radar◼ RF Characteristics
Output Power vs. Frequency
by Input Power

Output Power & Drain Efficiency
vs. Input Power

VDS=50V, IDS(DC)=0.5A
PW=200μsec., Duty=10%

90

5452

8052

POUT

507048604650

DE44404230402026283032343638

Output Power [dBm]54

Drain Efficiency [%]Output Power [dBm]

VDS=50V, IDS(DC)=0.5A
PW=200μsec., Duty=10%50484644422.8

2.9

40

3.03.1

3.23.3

FREQUENCY [GHz]Input Power [dBm]2.85GHz

3.05GHz

3.3GHzOutput Power vs. Input Powerby Drain Voltage

28dBm

30dBm

34dBm

36dBm

38dBm

32dBm

Drain Efficiency vs. Input Powerby Drain Voltage

f=3.05GHz, IDS(DC)=0.5A
PW=200μsec., Duty=10%

Freq.=3.05GHz, IDS(DC)=0.5A
PW=200μsec., Duty=10%56805470

Drain Efficiency [%]Output Power [dBm]

26dBm

52504846444260
504030201040026

Edition 1.0Jul. 2024

2830323436384024262830323436

Input Power [dBm]

Input Power [dBm]

55V50V45V55V50V

45V

40V

35V

30V

40V

35V

30V-2-3840

SGN2833-150L-R

GaN-HEMT for S-band Radar◼ RF Characteristics
Output Power vs. Input Powerby case temperature

Output Power vs. Input Powerby case temperature

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
PW=200μsec., Duty=10%

5480

5270

Drain Efficiency [%]Output Power [dBm]

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
PW=200μsec., Duty=10%504846444260
50403020401026283032343638402628

Input Power [dBm]-40 deg.C+25 deg.C303234363840Input Power [dBm]+85 deg.C-40 deg.C

Gain vs. Input Powerby case temperature+25 deg.C+85 deg.C

Gate Current vs. Input Powerby case temperature

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
PW=200μsec., Duty=10%

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
PW=200μsec., Duty=10%229080Gate Current [mA]

Gain [dB]201816147060
5040302010012-1026283032343638402426Input Power [dBm]-40 deg.CEdition 1.0Jul. 2024

+25 deg.C28303234363840Input Power [dBm]+85 deg.C-40 deg.C-3-+25 deg.C+85 deg.C

SGN2833-150L-R

GaN-HEMT for S-band Radar◼ RF Characteristics
Output Power, Drain Efficiency
vs. Input Power by Duty cycle

Output Power, Drain Efficiency
vs. Input Power by Duty cycle

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
Pulse width=500μsec.

POUT

5480

5250

70

486050

DE44

40

4240
26

2830

3234363890
POUT

50

70486046444030

4230204040202628

Duty=40%90

5480

525070486050

DEOutput Power [dBm]

Output Power [dBm]

POUT3042204040363840

Edition 1.0Jul. 2024

Duty=20%

Duty=40%80

POUT

706050DE4440302026

Input Power [dBm]Duty=10%

Duty=20%46423440484032389050443036

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
Pulse width=2000μsec.

Drain Efficiency [%]542834

Output Power, Drain Efficiency
vs. Input Power by Duty cycle

Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
Pulse width=1000μsec.

2632

Duty=10%Output Power, Drain Efficiency
vs. Input Power by Duty cycle4630

Input Power [dBm]Duty=20%5250

DEInput Power [dBm]Duty=10%80

Drain Efficiency [%]46

Output Power [dBm]

Output Power [dBm]5290

Drain Efficiency [%]54

Drain Efficiency [%]Freq.=3.05GHz, VDS=50V, IDS(DC)=0.5A
Pulse width=200μsec.

28303234363840

Input Power [dBm]Duty=40%

Duty=10%-4-

Duty=20%

Duty=40%

SGN2833-150L-R

GaN-HEMT for S-band Radar◼ Thermal Characteristics In Pulsed Operation

Rth @Tf=75deg.C (deg.C/W)

1
Duty=10%0.9

Duty=20%0.8Duty=40%

0.7
0.6
0.5
0.4
0.3
0.2
0.1
010100
Pulse Width [µsec.]

Edition 1.0
Jul. 2024-5-

1000

SGN2833-150L-R

GaN-HEMT for S-band Radar◼ Package Outline
Case Style: IV

Edition 1.0
Jul. 2024-6-

SGN2833-150L-R

GaN-HEMT for S-band Radar◼ Test Fixture

Edition 1.0
Jul. 2024-7-

SGN2833-150L-R

GaN-HEMT for S-band Radar

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Edition 1.0
Jul. 2024-8-