SGC0910-301B-R
X-band Internally Matched GaN-HEMT◼ Features•

High Output Power: Psat=55.3dBm (Typ.)•High Gain: Gp=9.3dB (Typ.)•High Power Added Efficiency: PAE=38% (Typ.)•Broad Band: 9.0 to 10.0GHz•

Impedance Matched Zin/Zout = 50ohm•

Hermetically Sealed Package•

Long pulse operation **Reduced Vds and/or low case temperature are needed to keep Tch below
200 deg.C. Please contact for the detail.

◼ Description
The SGC0910-301B-R is a high power GaN-HEMT that isinternally matched for X-band radar bands to provide optimum
power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
SymbolRatingItem
VDS
55
Drain-Source Voltage-15
VGS
Gate-Source Voltage-55 to +125Tstg
Storage Temperature+250
Tch
Channel Temperature
RECOMMENDED OPERATING CONDITION
SymbolItem
VDS
Drain-Source Voltage
IGF
Forward Gate Current
IGR
Reverse Gate Current
Tch
Channel Temperature
Pout
Output Power

Unit
V
V
deg.C
deg.C

Condition

Limit<=50<=187.2>=-13.6<+200<=P5dB

Rg=10ohm
Rg=10ohm

Unit
VmA
mA
deg.C
dBm

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item

SymbolPinch-off Voltage
Frequency Range
Output Power *1
Output Power *2
Power Gain *1
Power Gain *2
Drain Current
Power Added Efficiency

VpFreq.
Psat
Psat
Gp
Gp
IDSR
PAE

Thermal Resistance

Rth

CASE STYLE
RoHS Compliance
ESD

Edition 2.0
Jul. 2024

Condition
VDS=50V, IDS=20.0mA
VDS=50V
IDS(DC)=1.0A
Pulse Width=100μsec.
Duty=10%*1:f=9.0 to 9.6GHz*2:f=9.6 to 10.0GHz
Pin=46dBm
Channel to Case
(Pdiss=100W,CW)

Min.
9.054.353.7
8.37.7-

Limit
Typ.
-4.5
55.3
54.7
9.3
8.7
15.8
38

Max.
10.0
18.4
--0.70.8

Unit
VGHzdBmdBm
dBdB
A%deg.C/W

I2K
YES
2000V to <4000V
Class 2
Note: Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)-1-

SGC0910-301B-R
X-band Internally Matched GaN-HEMT⚫ RF Characteristics

9056805470

5260

505048404630

442042

Output Power vs. Frequency
VDS=50V, IDS(DC)=1.0A
PW=100µsec., Duty=10%5856

Output Power [dBm]58

Power Added Efficiency [%]Output Power [dBm]

Output Power &Power Added Efficiency vs. Input Power
VDS=50V, IDS(DC)=1.0A
PW=100µsec., Duty=10%1034363840424446

9.3GHz

9.7GHz5250484644488.8

Input Power [dBm]
9.0GHz54

Pin=34dBm
Pin=40dBm
Pin=46dBm

10GHz

Output Power vs. Input Powerby Drain Voltage

Power Added Efficiency [%]Output Power [dBm]5654
525048464442

Edition 2.0
Jul. 2024

3840424446

9.4

9.6

9.8

Frequency [dBm]
Pin=36dBm
Pin=42dBm

10 10.2
Pin=38dBm
Pin=44dBmf=9.3GHz, IDS(DC)=1.0A
PW=100μsec., Duty=10%

5836

9.2

Drain Efficiency vs. Input Powerby Drain Voltage

f=9.3GHz, IDS(DC)=1.0A
PW=100μsec., Duty=10%349486050403020100343638404244

Input Power [dBm]

Input Power [dBm]

30V

35V

40V

30V

35V

40V

45V

50V

55V

45V

50V

55V-2-4648

SGC0910-301B-R
X-band Internally Matched GaN-HEMT⚫ RF Characteristics
Output Power vs. Input Powerby case temperaturePower Added Efficiency vs. Input Powerby case temperature

f=9.3GHz, VDS=50V, IDS(DC)=1.0A
PW=100μsec., Duty=10%60Power Added Efficiency [%]5856

Output Power [dBm]f=9.3GHz, VDS=50V, IDS(DC)=1.0A
PW=100μsec., Duty=10%545250484644425040302010034363840424446483436

Input Power [dBm]-40deg.C25deg.C

4042444648

Input Power [dBm]85deg.C-40deg.C

Gain vs. Input Powerby case temperature

25deg.C

85deg.C

Gate Current vs. Input Powerby case temperature

f=9.3GHz, VDS=50V, IDS(DC)=1.0A
PW=100μsec., Duty=10%
200.318f=9.3GHz, VDS=50V, IDS(DC)=1.0A
PW=100μsec., Duty=10%

0.25

Gate Current [A]

16Gain [dB]3814121080.20.15

0.10.05

64034363840

42444648

3436

Input Power [dBm]-40deg.C

Edition 2.0Jul. 202425deg.C

3840424446

Input Power [dBm]85deg.C-40deg.C-3-25deg.C

85deg.C

48

SGC0910-301B-R
X-band Internally Matched GaN-HEMT⚫ Thermal Characteristics In Pulsed Operation

Rth @Tf=75deg.C [deg.C/W]

Rth vs. Pulse Width
10.90.8
0.70.60.50.4
0.3
0.2
0.10

Duty=10%
Duty=20%101001000

Pulse Width [µsec.]

Edition 2.0
Jul. 2024-4-

SGC0910-301B-R
X-band Internally Matched GaN-HEMT⚫ Package Outline
Case Style : I2K

1. Gate2. Source
3. Drain
4. Source
Unit: mmm
Tolerance: ±0.15

Edition 2.0
Jul. 2024-5-

SGC0910-301B-R
X-band Internally Matched GaN-HEMT⚫ Test Fixture

VGSVDS

PCB : RO4003C H=0.5mm εr=3.55 Cu=18μm
Unit : mm

Edition 2.0
Jul. 2024-6-

SGC0910-301B-R
X-band Internally Matched GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, orchemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
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The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operatingconditions.
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Information in this document is subject to change without notice.

Edition 2.0
Jul. 2024-7-