SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT◼ Features••••High Power GaN HEMT for DC to 5.0GHz
High Power: 6.7W @ 5.0GHz
High Efficiency: 52% @ 5.0GHz
DFN Plastic Package◼ Description
Sumitomo Electric’s GaN-HEMT SGNL005Z2K-R offers highefficiency, ease of matching and greater consistency for DC to5.0GHz Radar applications with 50V operation. SGNL005Z2K-R issuitable for broadband applications.
ABSOLUTE MAXIMUM RATINGS (Case Temperature TC=25deg.C)
Item
SymbolRating
55
Operating-Voltage
VDSUnitV

Drain-Source Voltage

VDSGate-Source Voltage
Total Power Dissipation
Storage Temperature

VGSPt
Tstg

160 @ VGS-8V-1518-40 to +125

VW
deg.C

Channel Temperature

Tch+250deg.C

RECOMMENDED OPERATING CONDITION
Item
SymbolDC Input Voltage
VDS
Forward Gate Current

IGF

Condition

VLimit<=50UnitV

Rg=51ohm<=3.74mA

Rg=51ohm>=-0.01mA

Reverse Gate Current

IGR

Output Power

PO UT<=P5dBdBm

Channel Temperature

Tch<=200deg.C

ELECTRICAL CHARACTERISTICS *1 (Case Temperature T C=25deg.C)
Item

SymbolCondition

Pinch-off Voltage

VPVDS=50V, IDS=0.88mA

Output Power
Drain Efficiency
Thermal Resistance

Pout *2DE *2
Rth *3

VDS=50V , IDS(DC) =0mA
f=5.0GHz , Pin=26.0dBm

CASE STYLE
RoHS Compliance

Z2K
YES

Min.
-3.45

Limit
Typ.
-2.95

Max.
-2.45

37.3
46.0
-

38.3
52.0
9.5

11.0

Note : *1 : Device screening test items and conditions*2 :10%-duty RF pulse ( DC supply constant )*3 : Sampling Test : samples size 10pcs. Criteria(accept / reject)=(0 / 1)

Edition 2.1
Sep. 2023-1-UnitVdBm%deg.C/WSGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Thermal Characteristics In Pulsed Operation

Rth @Tc=75deg.C [deg.C/W]

Rth vs. Pulse Width16141210810%

620%

42010100
Pulse Width [µs]1000Note : This data included the PCB board (base material CS3376C t=0.6mm Cu=18μm)
Channel to Case at 6W PDC

Edition 2.1
Sep. 2023-2-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Electrical characteristics (2.7 to 3.1GHz)◼ matching circuit for 2.7 to 3.1 GHz

Edition 2.1
Sep. 2023-3-SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Electrical characteristics (2.7 to 3.1GHz)

Edition 2.1
Sep. 2023-4-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Electrical characteristics (2.7 to 3.1GHz)

Edition 2.1
Sep. 2023-5-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Electrical characteristics (2.7 to 3.1GHz)

Edition 2.1
Sep. 2023-6-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Index and Tape / Reel Configuration(Part Number : SGNL005Z2K-RT, SGNL005Z2K-RT1)
ESD characteristic
Test Methodology

Class

Human Body Model(per ANSI/ESDA/JEDEC JS-001-2014)

1B

Charged-Device Model(per ANSI/ESDA/JEDEC JS-002-2014)

C3

Ordering Information
Part Number

MOQ

MOU

Packing Style

SGNL005Z2K-RT

2500pcs.

2500pcs.

Tape and Reel
(12mm width Tape)

SGNL005Z2K-RT1

500pcs.

500pcs.

Tape and Reel
(12mm width Tape)

SGNL005Z2K-R

20pcs.

20pcs.

Tray(4-inch)

Note : *MOQ stands for Minimum Order Quantity.
*MOU stands for Minimum Order Unit size.

Moisture Sensitivity Level
Level
2

Edition 2.1
Sep. 2023Floor LifeTimeCondition

1year after open the package≤30deg.C/60%RH-7-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Package Outline
Case Style : Z2K

Edition 2.1
Sep. 2023-8-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Package Markings⚫ Year code
Year

2020

2021

2022

2023

2024

2025

2026

2027

2028

CodeC

DE

F

G

H

I

J

K

Note: Code letter is cycling 25 alphabet without Q.

⚫ Month code
MonthJan.

Feb.

Mar.

Apr.

May

Jun.

Jul.

Aug.

Sep.

Oct.

Nov.

Dec.

CodeHM

NP

RST

UWXYZ

Edition 2.1
Sep. 2023-9-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Index and Tape / Reel Configuration(Part Number : SGNL005Z2K-RT, SGNL005Z2K-RT1)

Note : Baking of Tape & Reel material can not baked at 125deg.C.

Edition 2.1
Sep. 2023-10-

SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMT⚫ Mounting Method of SMD(Surface Mount Devices) for Lead-free solder
Mounting Condition(1) For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used.
(*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5%copper.)(2) A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low
halogen content is recommended.
(3) When soldering, use one of the following time / temperature methods for acceptable solder joints.
Make sure the devices have been properly prepared with flux prior soldering.
* Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow):
Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process.
Excessive reflow cycles will effect the resin resulting in a potential failure or latent defect. The
recommended reflow temperature profile is shown below. The temperature of the reflow profile
must be measured at the device body surface.

Temperature (deg.C)

Reflow temperature profile and condition:

260
255
217

(4)
(2) (6)

200
(5)
150
(1)
RT

(3)

(7)
Time

(1) Preheating:(2) Ramp-up Rate:(3) Liquidus temperature and time:(4) Peak Temperature:(5) Time Peak Temperature:(6) Ramp-down Rate:(7) Time RT to peak temperature:

150 to 200 deg.C, 60 to 120 seconds
3 deg.C /seconds max
217 deg.C, 60 to 150 seconds
260 deg.C
255deg.C, 30seconds max
6 deg.C /seconds max
8 minutes max* Measurement point: Center of the package body surface(4) The above-recommended conditions were confirmed using the manufacture’s equipment andmaterials. However, when soldering these products, the soldering condition should be verified bycustomer using their equipment and materials.

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SGNL005Z2K-R
DC – 5.0GHz High Power GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent rightor copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electric
warrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operatingconditions.
If any products described in this document represent goods or technologies subject to certain
restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the priorauthorization of the Japanese government will be required for export of those products from Japan.

http://www.sedi.co.jp/ATTENTION
Information in this document is subject to change without notice.

Edition 2.1
Sep. 2023-12-