Compact Laser MBE system
Model name : PAC-LMBE[ Feature ] High scalability Laser MBE (PLD) system
 An ultimate vacuum pressure of 5E-9Torr
 Advanced substrate heating units : halogen
lamp type for up to 1.5 inch (2 inch) substrate,and laser diode type for heating to more than
1,000 degrees C
 Up to 6 targets loadable
 Load-Lock transfer component for
exchange of targets and substrateseasy Various components mountable option ports
 Fully computer control and/or electronic

manual control

Laser MBE : Laser Molecular Beam Epitaxy
We, PASCAL Co., Ltd. have been developing and supplying many kinds of vacuum
apparatus heretofore in Japan. Above all, we are paying a special attention to thepulsed laser deposition (PLD) and the development of systems for the PLD. The laser
MBE is a refined method of PLD that realizes epitaxial growth of various oxide / nitride
thin films on a substrate. In laser MBE a substrate and sintered targets are set in an
ultra high vacuum (UHV) chamber. Epitaxial growth is caused by ablation of source
target by irradiation of laser pulse and sticking / coverage to growing surface on thesubstrate. The laser pulse is introduced from outside UHV chamber through a quartz
window. The growth process can be monitored in situ by RHEED of which intensity
oscillation is interpreted by an elastic scattering model.

Advantages of our system are;
 Easy evaporation despite materials with high melting point (ex.
oxides).
 Little difference of chemical composition between source targets anddeposited films.
 Quite few contamination due to laser abrasion as a light-induced
process.
 Digital (or discrete) control of film thickness / growth rate by repetition
number of the laser pulse.
 Growth under wide-vacuum-range condition with process gas flow isacceptable.
 Easy exchange of targets that leads to realize heteroepitaxy andmultilayered structure.
The laser MBE is very suitable for the atomic layer controlled growth of oxides /nitrides, and also suits for a simple and inexpensive apparatus comparing withconventional MBE. Our laser MBE system pursues extremely to be compact, andcontains many outstanding know-hows on, for instance, the substrate heating and theload-locked exchange of samples or targets. The laser MBE has advantages of boththe conventional MBE and the pulsed laser deposition (PLD), simultaneously,
because the deposition method means a pulsed laser abrasion growth in an ultra highvacuum circumference.

[ Standard configuration of PAC-LMBE ]1. Deposition chamber
2. Multi-target manipulator unit
3. Substrate heating unit (Laser diode type or Halogen lamp type)
4. Load-Lock (L/L) chamber with transfer mechanism
5. Common system (Frame, rack and control system)[ Options ]

Variety RHEEDs and pattern processing system
Combinatorial mask positioning unit
Mass flow controller(s)Ozonizer, Radical beam source
Optical component for laser beam introduction
Excimer laser stand and laser optics with protection hood
Pre-annealing heater in Load-Lock chamber
Gate valve for laser beam introduction viewing port exchange

Atomic layer controlled growth by laser MBE
Bright-field image of the LaTiO3/SrTiO3 multilayer thin film
section observed with a transmission electron microscope(TEM)
Reference;
A. Ohtomo et.al., NATURE, VOL 419, 378 (2002) Substrate heating unit
Halogen lamp type

Laser diode typeThe halogen lamp type substrate heating unit makes

The laser diode type substrate heating unit makes thethe substrate heating possible to more than 800

substrate heating possible to more than 1,000 degrees

degrees C, under the oxygen atmosphere more thanC, under the oxygen atmosphere.

500mTorr.
 More than 1,000 degrees C substrate heating
 Up to 1.5 inch (38mmφ) substrate size ofstandard holder, in addition up to 2 inch
(50mmφ) substrate size of optional holder

 Up to 10mm square substrate size More than 800 degrees C substrate heating

 Quick substrate heating and cooling Uniform temperature distribution

 Best solution of substrate heating under oxygenatmosphere Free rotation of substrate holder

 Free rotation of substrate holder

 Substrate temperature monitor using pyrometer Under the oxygen atmosphere more than
500mTorr Multi-target manipulator unit
This multi-target manipulator works choosing appropriate source
target for thin film deposition following the deposition sequence
like as a revolver mechanism. In addition the unit has target spinmechanism for uniform irradiation of ablation laser. The unit canload up to 6 targets and has contamination protective shield. And
the unit has clear position which is no target area to get throughlaser beam. It will give you easy monitor of laser beam powerusing laser power monitor (option) and synthesized quartz viewing
port on laser power monitor port (option).

 Load-Lock (L/L) chamber withtransfer mechanism
This L/L chamber has a vacuum pumping line which can exhaust in ashort time in the UHV. Substrates and Targets are transferred between
L/L chamber and deposition chamber

without exposing to theatmosphere. The deposition chamber is always kept under the UHV
because the deposition chamber is separated from this L/L chamber.

Pre-annealing
heater (option)

Fully LMBE control software
Pascal’s LMBE control software can control not only substrate heating, target selection, target spin and twist, combinatorial mask
position (option), substrate rotation, but also oscillations of an ablation laser in the same period. In this way, this software cancontrol each function with an electronic manual, and then automatically control thin film deposition processes to edit the script of itsrecipe and run.
You will be able to choose two modes of substrate heating control; lamp or laser diode power manual control and substratetemperature PID control. You will be able to select target or clear position and to ablate target surfaces uniformly by target spin andtwist control. You will be able to control not only pumps ON / OFF but also valves Open / Close. And then You will be able to get
more many functions for advanced Laser MBE.

Lamp or laser diodedriven current monitor

Substrate temperaturemonitorVacuum pressure
monitorMain window of LMBE control software

Vacuum control window

1. Run button for script edit and run window
2. Run button for vacuum control window
3. Run button for CCD display window
4. Exit button
5. Substrate heating control
6. Ablation laser oscillation control
7. Target selection, target spin and twist control
8. Combinatorial mask position control (option)
9. Substrate rotation control
10. Auxiliary operation
11. Monitor and log display
Script edit and run window

Electronic manual controller
 Substrate temperature control
You will be able to choose two modes of substrateheating control; lamp or laser diode power manual control
and substrate temperature PID control by temperaturecontroller.

 Substrate rotation control and target
rotation control

Temperature controller

You will be able to control rotation speed of substrate
and target by rotation speed controller.

 Target revolution control
You will be able to select target or clear position and toRotation speed controlleralign target position by remote target controller.

 Vacuum control
You will be able to control not only pumps ON / OFF but
also valves Open / Close by vacuum control panel. That

Control rackinterlock will protect against the miss operation of pushbutton.

RP1

RP2Air・gas
Connection area

630

842

RHEED

Rack1630

1455

Cable space
150

2297
N2 or Air
0.5-0.6MPa
SWG 1/4"
399

2960
2250
1500
600

290
500

Remote target controller

600

Rack2
1455

700

235

168

2990

RHEED pattern monitor

110

1562
455

119

Substrate Heating Unit

270
382

Bypass line

1120

(1726)

800L/S TMP
Air cooling

N2 Vent gas
0.01-0.05MPa
SWG 1/4"
Process gas
0.01-0.05MPa
SWG 1/4"

Multi-target manipulator(1300)Air panel

TMP for
RHEED

300

Optional units
 RHEED unit
Fundamental unit of PASCAL Reflection High-Energy Electron Diffraction (RHEED) consists a compact size electron-gun withmounting via CF1.33" (ICF34) flange. The compact size e-gun brings easy mount to a vacuum chamber or easy maintenance. You
can select RHEED unit from following 3 types.

Models
Items

RHEED with single-stage
differential pumping unit

RHEED with double-stage
differential pumping unit

Parallel scanning RHEED Max 30kV acceleration
voltage (25kV rated) Max 30kV acceleration
voltage (25kV rated) Max 30kV acceleration
voltage (25kV rated) Workable up to 1.3Pa (1E-2Torr) by Single-stage
differential pumping Workable up to 133Pa (1Torr) by Double-stage
differential pumping Workable up to 1.3Pa (1E-2Torr) by Single-stage
differential pumping Reasonable price Variable positioning
fluorescent screen

 Scanning coil and driver forelectron-beam parallel
scanning

ViewFeature

 XY-axes and tilt motion ofelectron-beam guide RHEED pattern processing system
This system without using a special device realizes highperformance RHEED pattern processing by taking theRHEED pattern observed with a CCD camera in a computer.
You can easily deposit at high-definition thin film growing
process by using this system.

 Real-time RHEED pattern observation,
intensity oscillation monitoring, andsaving their data Reloading saved data, processing andsaving as a text file
 Easy analysis using commercial spreadsheet software Even beginners can immediately use by auser-friendly operation.

 Combinatorial mask positioning unit
Synthesizing at one time specimens representing all combination of synthesis
conditions concerned followed by screening the products features the"combinatorial chemistry", which becomes indispensable now in medicine orpharmaceutical development. As a result of the combinatorial chemistry, an"exponential" acceleration of development speed has been proven. By
precise movement of the mask board patterned with rectangles or triangles atclose position of substrate during thin film deposition, composition gradientthin film patterns are formed on one piece of substrate.

 Mass flow controller(s)Variable leak valve of process gas inlet can control leak rate at wide range pressure
precisely, but it can’t control automatically. If you want to control automatically, you
should order mass flow controller(s) changed for variable leak valve , or added aside
from variable leak valve. And then if you order it / them with optional mass flow
control function of PLD control software, you will be able to control not only flow rate
but also vacuum pressure by feedback program.

 Ozonizer, Radical beam source
If you want to inlet active gas for process gas, we can offer ozonizer and radical beamsource. Ozonizer will ozonize pure O2 and form several percent ozone gas, andradical beam source will form Oxygen atoms, Nitrogen atoms or Hydrogen atoms.
You can choose to inlet those gases from variable leak valve(s) or mass flowcontroller(s). And then if you want to blow ozone gas to substrate from its
neighborhood, you should also order Z stage with admittance nozzle.

Lens holder with alignment stage and rod
included in Optical component for laser beam
introduction

 Optical component for laser beam introduction
In this component, following items are included;
 UV248, Fused Silica, Plano-Convex Lens : 1ea.
 Excimer Laser Mirror (Reflection angle = 45 degree) : 1ea.
 Excimer Laser Mirror (Reflection angle = 22.5degree) : 1ea.
 Lens holder with alignment stage and rod : 1set Excimer laser stand and laser optics withprotection hood
In this basic component, following items are included;
 Fused Silica Plano-Convex Lens for KrF Excimer Laser : 1 ea.
 KrF Excimer Laser Mirror (Reflection angle = 45 degree) : 1 ea.
 KrF Excimer Laser Mirror (Reflection angle = 22.5degree) : 1 ea.
 Stand for CompexPro 102 Excimer Laser : 1 unit
 Lens and mirror holders with alignment stages and protection hood : 1 set
And then you can add or change with following optional items;
 Motorized lens alignment stages with control software Manual Attenuator unit Motorized Attenuator unit with control software Lens and Mirrors for other wavelength laser
 Stand for other laser

Excimer laser stand and laser optics withprotection hood mounting CompexPro 102
Excimer Laser

 Pre-annealing heater in Load-Lock chamber
If you want to pre-annealing in Load-Lock chamber, you can order pre-annealing
heater. This is mounted on access door of Load-Lock chamber. Substrates will beheated up to 300 deg-C.

 Gate valve for laser beam introduction viewing
port exchange
Laser beam introduction viewing port will be burned and colored by laser beam. In
this case, transmission factor of viewing will become worse, and you should change
the point of viewing port illuminated by laser beam or you should exchange viewing
port . If you don’t want to brake UHV in deposition chamber at this time, you have torequire this gate valve with bypass line connected to Load-lock chamber.

Gate valve for laser beam introductionviewing port exchange and motorized
lens alignment stages

Specification of PAC-LMBE
Shape, dimension and material

Phi 300mm x H 500mm, Cylindrical horizontal layout chamber (SUS304, EP finish)

Ultimate vacuum pressure< 5.0E-9 Torr (6.7E-7 Pa)

Vacuum pumping line

800L/s TMP, 237L/min RP, pneumatic valves and bypass line etc.

Vacuum pressure monitor

UHV range : Nude ion gauge (standard) / Full-range gauge (option)
Process range : Capacitance manometer (Max range: 1 Torr)
Fore-line monitor : T/C gauge

Process gas inlet

Variable leak valve and cut valve (standard) / Mass flow controller (option)

Laser beam introduction port

CF4.5" (ICF114) synthesized quartz viewing port with quartz shield plate
45 degree from horizontal direction
Gate valve for laser beam introduction viewing port exchange (option)

Laser power monitor port

CF4.5" (ICF114) Blank (standard) / Synthesized quartz viewing port with shutter (option)

Target size and loading number

1 inch (phi 25.4mm) x 3mmt 6ea.

Clear position

1 position for laser power monitor

Target moving mechanism

Z-motion : +/-20mm manual (standard) / stepping motor drive (option)

Target rotation mechanism

AC speed control motor drive

Target revolution mechanism

High resolution stepping motor drive for twist motion

Mounting flange

CF8" (ICF203), with CF2.75"(ICF70) viewing port for mask & substrate observation

Type of substrate heating

Halogen lamp type substrate heating(chiller not included, cooling water required)

Laser diode type substrate heating
808nm, 120W (chiller included)

Substrate size

Up to 1.5 inch (phi 50mm) / up to 2 inch (optional holder)

10mm square

Maximum temperature

More than 800 deg C

More than 1,000 deg C

Temperature gradient

Impossible

Impossible

Moving mechanism

Z1-motion : +/- 20mm, Z2-motion : +/- 20mm

Z1-motion : +/- 20mm

Substrate rotation mechanism

Stepping motor drive with sensor

Shape, dimension and material

Phi 160mm x H 240mm, Cylindrical horizontal layout chamber (SUS304)

Ultimate vacuum pressure

5E-7 Torr (6.7E-5 Pa)

Vacuum pumping line

77L/s TMP, 160L/min RP, pneumatic valves and bypass line etc.

Vacuum pressure monitor

UHV range : nude ion gauge (standard) / Full-range gauge (option)
Fore-line monitor : T/C gauge

Holder stocker

Substrate holder : 2 ea., Target holder : 4 ea.

Pre-annealing heater

None (standard) / up to 200 deg C (option)

FrameChamber frame : 1 set

Rack

Power supply and control rack (JIS conformity) : 1 or 2 set(s)Computer / Controller

Windows®PC installed LMBE control software in and/or electronic manual controller

Power Supply

AC200-240V 3-phase 100A

AC200-240 3-phase 100A
AC200-240 1-phase 10A (for chiller)

Cooling water

water pressure : > 2kgf/cm3, water flow : > 20L/minNot necessary

Gas inlet

Purge and Vent gas line : 1 x 1/4″SWG, Process gas line : 1 x 1/4″SWG

Compressed gas

0.5 MPa (5 kg/cm2) of Nitrogen or air with pressure regulator

Deposition chamber

Multi-target manipulator
unit

Substrate heating unit

Load-Lock (L/L)
chamber with transfer
mechanism

Common SystemUtility

RHEED with single-stage differential pumping unit : Conventional 30 kV RHEEDRHEED with double-stage differential pumping unit : High pressure RHEEDRHEED units
Parallel scanning RHEED : in-plane substrate scanning RHEEDRHEED pattern processing system : High resolution CCD camera unit, shade, pattern processing software

Option units

Combinatorial mask positioningunitLong mask : 0 to 160mm stepping motor drive

Ozonizer

Several persent ozon gas generator

Radical beam source

Oxygen atom, nitrogen atom or hydrogen atom generator
Optical component for laser beam introduction : simple laser beam optical unit

Optical components
Excimer laser stand and laser optics with protection hood : complete laser beam optical unit

* Specifications and appearances may be subject to change for improvement without notice.

PASCAL CO., LTD.
Head office 1-16-4 Showa-cho, Abeno-ku, OSAKA 545-0011, JAPANTEL :+81-(0)6-6626-1321 FAX :+81-(0)6-6626-1323

e-mail : pascal@pascal-co-ltd.co.jp
URL :http://www.pascal-co-ltd.co.jp/home.html
CAT. PACLMBE-MAY2012E