Mobile Combi-Laser MBE system
Model name : MC-LMBE[ Feature ] High performance Laser MBE (PLD) system A compact UHV body highly contributes to user's easy operation
 An ultimate vacuum pressure of 5E-9Torr
 More than 1,000 degrees C substrateheating using laser diode 2 motor-driven combinatorial masks for
combinatorial research and development Up to 6 targets loadable Standard equipped parallel scanning
RHEED component
 Load-Lock transfer component for easy
exchange of targets and substrates
 Fully computer control

Laser MBE : Laser Molecular Beam Epitaxy
We, PASCAL Co., Ltd. have been developing and supplying many kinds of vacuum
apparatus heretofore in Japan. Above all, we are paying a special attention to thepulsed laser deposition (PLD) and the development of systems for the PLD. The laser
MBE is a refined method of PLD that realizes epitaxial growth of various oxide / nitride
thin films on a substrate. In laser MBE a substrate and sintered targets are set in anultra high vacuum (UHV) chamber. Epitaxial growth is caused by ablation of source
target by irradiation of laser pulse and sticking / coverage to growing surface on thesubstrate. The laser pulse is introduced from outside UHV chamber through a quartz
window. The growth process can be monitored in situ by RHEED of which intensity
oscillation is interpreted by an elastic scattering model.

Advantages of our system are;
 Easy evaporation despite materials with high melting point (ex.
oxides).
 Little difference of chemical composition between source targets anddeposited films.
 Quite few contamination due to laser abrasion as a light-inducedprocess.
 Digital (or discrete) control of film thickness / growth rate by repetition
number of the laser pulse.
 Growth under wide-vacuum-range condition with process gas flow isacceptable.
 Easy exchange of targets that leads to realize heteroepitaxy andmultilayered structure.
The laser MBE is very suitable for the atomic layer controlled growth of oxides /nitrides, and also suits for a simple and inexpensive apparatus comparing withconventional MBE. Our laser MBE system pursues extremely to be compact, andcontains many outstanding know-hows on, for instance, the substrate heating and theload-locked exchange of samples or targets. The laser MBE has advantages of boththe conventional MBE and the pulsed laser deposition (PLD), simultaneously,
because the deposition method means a pulsed laser abrasion growth in an ultra highvacuum circumference.

[ Standard configuration of MC-LMBE ]1. Deposition chamber
2. Multi-target manipulator
3. Laser diode type substrate heating unit
4. Combinatorial mask positioning unit
5. Parallel scanning RHEED and pattern processing system
6. Load-Lock (L/L) chamber with transfer mechanism
7. Common system (Frame, rack and control system)[ Options ]Mass flow controller(s)Ozonizer, Radical beam source
Optical component for laser beam introduction
Excimer laser stand and laser optics with protection hood
Pre-annealing heater in Load-Lock chamber
Gate valve for laser beam introduction viewing port exchange

Atomic layer controlled growth by laser MBE
Bright-field image of the LaTiO3/SrTiO3 multilayer thin film
section observed with a transmission electron microscope(TEM)
Reference;
A. Ohtomo et.al., NATURE, VOL 419, 378 (2002)

 RHEED unit
Fundamental unit of PASCAL Reflection High-Energy Electron Diffraction (RHEED) consists a compact size electron-gun withmounting via CF1.33" (ICF34) flange. The compact size e-gun brings easy mount to a vacuum chamber or easy maintenance. You
can select RHEED unit from following 3 types.

Models
Items

Parallel scanning RHEED( standard )RHEED with single-stage
differential pumping unit
( option )RHEED with double-stage
differential pumping unit
( option ) Max 30kV acceleration
voltage (25kV rated) Max 30kV acceleration
voltage (25kV rated) Max 30kV acceleration
voltage (25kV rated) Workable up to 1.3Pa (1E-2Torr) by Single-stage
differential pumping Workable up to 1.3Pa (1E-2Torr) by Single-stage
differential pumping Workable up to 133Pa (1Torr) by Double-stage
differential pumping

 Scanning coil and driver forelectron-beam parallelscanning Reasonable price Variable positioning
fluorescent screen

View

Feature XY-axes and tilt motion ofelectron-beam guide RHEED pattern processing system
This system without using a special device realizes highperformance RHEED pattern processing by taking theRHEED pattern observed with a CCD camera in a computer.
You can easily deposit at high-definition thin film growing
process by using this system.

 Real-time RHEED pattern observation,
intensity oscillation monitoring, andsaving their data Reloading saved data, processing andsaving as a text file
 Easy analysis using commercial spreadsheet software Even beginners can immediately use by auser-friendly operation.

 Load-Lock (L/L) chamber withtransfer mechanism
This L/L chamber has a vacuum pumping line which can exhaust in ashort time in the UHV. Substrates and Targets are transferred between
L/L chamber and deposition chamber

without exposing to theatmosphere. The deposition chamber is always kept under the UHV
because the deposition chamber is separated from this L/L chamber.

Pre-annealing
heater (option)

Combinatorial method for material science
Synthesizing at one time specimens representing all combination of synthesis conditions concerned followed by screening the products
features the "combinatorial chemistry", which becomes indispensable now in medicine or pharmaceutical development. As a result of the
combinatorial chemistry, an "exponential" acceleration of development speed has been proven.
Why don't you get the scheme in your thin film study? From an early stage of the scheme we have been developed "combinatorial PLD
apparatuses" with an academia. Our experience can help your thin film research and development!

 By precise movement of the mask board patterned with rectangles at close position of substrate during thin film
deposition, various thin film patterns divided into micro-areas are formed on one piece of substrate.

 By precise movement of the mask board patterned with rectangles or triangles at close position of substrate during
thin film deposition, composition gradient thin film patterns are formed on one piece of substrate.

 Laser diode type substrate heating unit
Substrate heating by irradiating back side of substrate with a laser diode

Heating temperature : more than 1,000 degrees CEasy high rate heating and coolingThe best way for substrate heating and deposition under oxygen atmosphere

Heating temperature measurement area : up to 2mm dia. by pyrometerTemperature gradient heating : combinatorial temperature deposition

Uniform HeatingTemperature Gradient Heating

Laser diodeLaser diodeA B C

Standard substrate holder

Cross-sectional view

Temperature gradient holder

Substrate Temperature Profile

Cross-sectional view

Substrate Temperature Profile Parallel scanning RHEED for combinatorial thin film deposition
To evaluate the quality of combinatorial thin film deposition by RHEED,
in-plane of substrate have to be scanned by electron beam. Parallel
scanning RHEED can evaluate crystal growth process in combinatorial
thin film deposition.

Fully LMBE control software
Pascal’s LMBE control software can control not only substrate heating, target selection, target spin and twist, combinatorial mask position,
substrate rotation, but also oscillations of an ablation laser in the same period. In this way, this software can control each function with anelectronic manual, and then automatically control thin film deposition processes to edit the script of its recipe and run.
You will be able to choose two modes of substrate heating control; laser diode (or lamp) power manual control and substrate temperature PID
control. You will be able to select target or clear position and to ablate target surfaces uniformly by target spin and twist control. You will beable to make combinatorial thin film as various thin film patterns on one piece of substrate to control combinatorial mask position in tandem withoscillations of an ablation laser. And then You will be able to get more many functions for advanced Laser MBE.

Laser diode (or lamp)
driven current monitor

Substrate temperaturemonitor

Vacuum pressure monitor

Main window of LMBE control software

Vacuum control window

1. Run button for script edit and run window
2. Run button for vacuum control window
3. Run button for CCD display window
4. Exit button
5. Substrate heating control
6. Ablation laser oscillation control
7. Target selection, target spin and twist control
8. Combinatorial mask position control
9. Substrate rotation control
10. Auxiliary operation
11. Monitor and log display
Script edit and run window

Optional units Mass flow controller(s)Variable leak valve of process gas inlet can control leak rate at wide range pressure
precisely, but it can’t control automatically. If you want to control automatically, youshould order mass flow controller(s) changed for variable leak valve , or added asidefrom variable leak valve. And then if you order it / them with optional mass flow
control function of PLD control software, you will be able to control not only flow rate
but also vacuum pressure by feedback program.

 Ozonizer, Radical beam source
If you want to inlet active gas for process gas, we can offer ozonizer and radical
beam source. Ozonizer will ozonize pure O2 and form several percent ozone gas,and radical beam source will form Oxygen atoms, Nitrogen atoms or Hydrogen atoms.
You can choose to inlet those gases from variable leak valve(s) or mass flowcontroller(s). And then if you want to blow ozone gas to substrate from its
neighborhood, you should also order Z stage with admittance nozzle.

Lens holder with alignment stage and rod
included in Optical component for laser beam
introduction

 Optical component for laser beam introduction
In this component, following items are included;
 UV248, Fused Silica, Plano-Convex Lens : 1ea.
 Excimer Laser Mirror (Reflection angle = 45 degree) : 1ea.
 Excimer Laser Mirror (Reflection angle = 22.5degree) : 1ea.
 Lens holder with alignment stage and rod : 1set Excimer laser stand and laser optics withprotection hood
In this basic component, following items are included;
 Fused Silica Plano-Convex Lens for KrF Excimer Laser : 1 ea.
 KrF Excimer Laser Mirror (Reflection angle = 45 degree) : 1 ea.
 KrF Excimer Laser Mirror (Reflection angle = 22.5degree) : 1 ea.
 Stand for CompexPro 102 Excimer Laser : 1 unit
 Lens and mirror holders with alignment stages and protection hood : 1 set
And then you can add or change with following optional items;
 Motorized lens alignment stages with control software Manual Attenuator unit Motorized Attenuator unit with control software Lens and Mirrors for other wavelength laser
 Stand for other laser

Excimer laser stand and laser optics withprotection hood mounting CompexPro 102
Excimer Laser

 Pre-annealing heater in Load-Lock chamber
If you want to pre-annealing in Load-Lock chamber, you can order pre-annealing
heater. This is mounted on access door of Load-Lock chamber. Substrates will beheated up to 300 deg-C.

 Gate valve for laser beam introduction viewing
port exchange
Laser beam introduction viewing port will be burned and colored by laser beam. In
this case, transmission factor of viewing will become worse, and you should change
the point of viewing port illuminated by laser beam or you should exchange viewing
port . If you don’t want to brake UHV in deposition chamber at this time, you have torequire this gate valve with bypass line connected to Load-lock chamber.

Gate valve for laser beam introduction
viewing port exchange and motorized
lens alignment stages

Specification of MC-LMBE
Shape, dimension and material

260mm diam., Spherical chamber (SUS304, EP finish)

Ultimate vacuum pressure< 5.0E-9 Torr (6.7E-7 Pa)

Vacuum pumping line

250L/s TMP, 237L/min RP, manual valves and bypass line etc. / pneumatic valves for PC control (option)

Vacuum pressure monitor

UHV range : Nude ion gauge (standard) / Full-range gauge (option)
Process range : Capacitance manometer (Max range: 1 Torr)
Fore-line monitor : T/C gauge

Process gas inlet

Variable leak valve and cut valve (standard) / Mass flow controller (option)

Laser beam introduction port

CF4.5” (ICF114) synthesized quartz viewing port with quartz shield plate
45 degree from horizontal direction
Gate valve for laser beam introduction viewing port exchange (option)

Laser power monitor port

CF4.5” (ICF114) Synthesized quartz viewing port with shutter

Target size and loading number

1 inch (phi 25.4mm) x 3mmt 6ea.

Clear position

1 position for laser power monitor

Target moving mechanism

Z-motion : +/-20mm manual (standard) / stepping motor drive (option)

Target rotation mechanism

AC speed control motor drive

Target revolution mechanism

High resolution stepping motor drive for twist motion

Mounting flange

CF8” (ICF203), with CF2.75”(ICF70) viewing port for mask & substrate observation

Type of substrate heating

Laser diode type substrate heating (Standard)
808nm, 120W (chiller included)

Substrate size

10mm square

Maximum temperature

More than 1,000 deg C

Temperature gradientmore than 200 deg C in one piece of substrate

Moving mechanism

Z1-motion : +/- 10mm

Substrate rotation mechanism

Stepping motor drive with sensor

Short mask mechanism

X1-motion : 0 to 20mm stepping motor driveLong mask mechanism

X2-motion : 0 to 160mm stepping motor drive

Type of RHEED

Parallel scanning RHEED(standard)

RHEED with single-stage differential
pumping unit (option)

RHEED with double-stage
differential pumping unit (option)

RHEED e-gun

Acceleration voltage : 30kV max.
(25kV rated)

Acceleration voltage : 30kV max.
(25kV rated)

Acceleration voltage : 30kV max.
(25kV rated)

Motion of electron-beam guide

None

None

XY-axes and tilt

Fluorescent screen

CF6”(ICF152) flange mountCF6”(ICF152) flange mount

Variable positioning screen

Workable pressure< 1E-2 Torr (1.3 Pa)< 1E-2 Torr (1.3 Pa)< 1 Torr (133 Pa)

Vacuum pumping line

77L/s TMP etc.

77L/s TMP etc.

77L/s TMP x2, RP etc.

Scanning coil

Parallel scanning e-beam control

None

None

Pattern processing system

High resolution CCD camera unit, shade, pattern processing software

Shape, dimension and material

Phi 114mm x H 250mm, Cylindrical horizontal layout chamber (SUS304)

Ultimate vacuum pressure

5E-7 Torr (6.7E-5 Pa)

Vacuum pumping line

77L/s TMP, 160L/min RP, manual valves and bypass line etc. / pneumatic valves for PC control (option)

Vacuum pressure monitor

UHV range : nude ion gauge (standard) / Full-range gauge (option)
Fore-line monitor : T/C gauge

Holder stocker

Substrate holder : 2 ea., Target holder : 4 ea.

Pre-annealing heater

None (standard) / up to 200 deg C (option)

Frame and rack

Chamber frame integrated with power supply and control rack (JIS conformity)

Computer for control

Windows®PC installed LMBE control software inPower Supply

AC200-240 3-phase 100A
AC200-240 1-phase 10A (for chiller)

Cooling water / compressed air

Not necessary

Gas inlet

Purge and Vent gas line : 1 x 1/4″SWG, Process gas line : 1 x 1/4″SWG

Deposition chamber

Multi-target manipulator

Substrate heating unit

Combinatorial mask
positioning unit

RHEED unit and patternprocessing system

Load-Lock (L/L)
chamber with transfer
mechanism

Common SystemUtility* Specifications and appearances may be subject to change for improvement without notice.

PASCAL CO., LTD.
Head office 1-16-4 Showa-cho, Abeno-ku, OSAKA 545-0011, JAPANTEL :+81-(0)6-6626-1321 FAX :+81-(0)6-6626-1323

e-mail : pascal@pascal-co-ltd.co.jp
URL :http://www.pascal-co-ltd.co.jp/home.html
CAT. MCLMBE-MAY2012E