2019年度 提案書 （Web公開用）

作成者： DUTTAGUPTA SAMIK（東北大CSIS）

研究プロジェクト名： Charge and spin‐dependent transport phenomena in
Weyl semi‐metals for topological antiferromagnetic spintronics
概 要 ： The interplay of relativistic spin‐orbit interaction, magnetism and strong electronic
correlations in antiferromagnetic Weyl semi‐metals (WSMs) manifests in novel properties
prospective for antiferromagnetic spintronics. We aim to quantify the magnetotransport propertiesof antiferromagnetic WSM and WSM/non‐magnet heterostructures. Our experimental results,
supported by theoretical models will provide a convenient approach for understanding of theeffects of band topology in WSMs and its utilization for antiferromagnet‐based spintronic devices.

コアメンバー： Samik DuttaGupta (CSIS, Tohoku Univ), Shunsuke Fukami (RIEC,Tohoku Univ), J. Ieda (JAEA)
期待される研究成果：
The results obtained from this research entails
the clarification of charge and spin‐dependenttransport phenomena associated with non‐trivial topological band characteristics andspin‐structures in WSM heterostructures. This
will provide considerable insights into
understanding and tailoring of the exotic
properties exhibited by WSMs (intrinsic
anomalous Hall, quantum oscillations, chiralanomaly etc.). The proposed experimental andtheoretical investigations unveils new physics
and device concepts for topologicalantiferromagnetic spintronics.

Figure: (a) Optical micrograph of an antiferromagnetic Weyl
semi-metal Hall-bar structure. IDC refers to the applied current
while VXY is the measured voltage. (b) Experimental results ofHall resistivity (obtained from VXY) vs applied out-of-planemagnetic field demonstrates the interplay of band topology with
spin-structure manifesting in intrinsic anomalous Hall effect.

作成者： Samik DuttaGupta（東北大CSIS）

2019年度 報告書 （Web公開用）

研究プロジェクト名： Charge and spin-dependent transport phenomena in
Weyl semi-metals for topological antiferromagnetic spintronics
概要：

The interplay of relativistic spin-orbit interaction, magnetism and topology inantiferromagnetic Weyl semi-metals (WSMs) manifests in novel properties prospective for
antiferromagnetic spintronics. We aim to clarify the impact of the topology of the band structure
and magnetic ordering on the magnetotransport properties of antiferromagnetic Mn3Sn thin films
as a function of crystallographic orientations.
研究成果（実施状況）： We utilized C-plane (0001)

主要発表論文等：

0.8(a)(a)(b)ZYXIDCrXY (mW-cm)

and M-plane (1-100) oriented MgO sub./underlayer/Mn3Sn (40 nm)/MgO/Ru thin films
patterned into Hall-bar structures for theinvestigation of magnetotransport properties.
In accordance with previous studies, we observea large anomalous Hall effect for M-planeorientations, while is zero for C-plane orientedstructures. Planar Hall effect measurements show
a considerable anisotropic behavior among C andM-plane orientations. Future investigations withvarying Mn3Sn thickness and temperature is
expected to shed light on the anisotropic
magneto-transport properties, beneficial for
topological antiferromagnetic spintronics.

0.4
0.0-0.4-0.8-2M-plane
C-plane-101

Magnetic Field m0HZ (T)2

Figure: (a) Optical micrograph of an antiferromagnetic Weyl
semi-metal Hall-bar structure. IDC refers to the applied current
while VXY is the measured voltage. (b) Experimental results ofHall resistivity (obtained from VXY) vs applied out-of-planemagnetic field for C-plane and M-plane Mn3Sn structures.