楊 卉 YANG, Hui19118044(at)bjtu.edu.cn

居室：北キャンパス電子科学研究所 3F 03-106
TEL : 011-706-9433 / FAX : 011-706-9432
研究キーワード：透明酸化物半導体デバイス, 熱電能電界変調法
0000-0002-2287-2243

略歴Visiting scholar, Research Institute for Electronic Science, Hokkaido University,Japan, April 2022-present
Ph. D candidate, Optical Engineering, Beijing Jiaotong University (BJTU), China,
September 2019-present
Master, Electronic Science and Technology, Beijing Jiaotong University (BJTU),
China, September 2017-August 2019
Bachelor of Engineering, Electronic Science and Technology, Beijing University ofChemical Technology (BUCT), China, September 2013-August 2017

原著論文 (12)[12] Prashant Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka
Matsuo, Yusaku Magari, and Hiromichi Ohta, “Improved Electron Transport
Properties of Zn-rich In-Ga-Zn-O Thin Film Transistors”, J. Phys. Chem. C 127,
2622-2627 (2023). (DOI: 10.1021/acs.jpcc.2c07442)[11] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi
Ohta, “Thermopower Modulation Analyses of High-mobility Transparent
Amorphous Oxide Semiconductor Thin-Film Transistors”, ACS Appl. Electron.
Mater. 4, 5081-5086 (2022). (September 29, 2022) (DOI:10.1021/acsaelm.2c01210)[10] Hui Yang, Weiguang Yang, Jinbao Su, Xiqing Zhang, “Enhancement-mode
thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide
channel layer”, Materials Science in Semiconductor Processing 137, 106228(2022). (DOI: 10.1016/j.mssp.2021.106228)[9] Hui Yang, Jinbao Su, Xiqing Zhang, “Influence of oxygen flow during
sputtering process on the electrical properties of Ga-doped InZnSnO thin filmtransistor”, Semicond. Sci. Technol. 36, 045006 (2021). (DOI: 10.1088/13616641/abe140)[8] Jinbao Su, Hui Yang, Yaobin Ma, Ran Li, Lanchao Jia, Depeng Liu, XiqingZhang, “Annealing atmosphere-dependent electrical characteristics and bias
stability of N-doped InZnSnO thin film transistors”, Materials Science in
Semiconductor Processing 113, 105040 (2020).
(DOI: 10.1016/j.mssp.2020.105040)[7] Lanchao Jia, Depeng Liu, Hui Yang, Jinbao Su, Lixin Yi, Xiqing Zhang,“Investigation on the electrical properties of amorphous IZALO thin-filmtransistors”, J. Mater. Sci.: Mater. Electron. 31, 4867-4871 (2020).
(DOI: 10.1007/s10854-020-03049-8)

[6] Hui Yang, Jinbao Su, Ran Li, Lanchao Jia, Depeng Liu, Yaobin Ma, Xiqing
Zhang, “Achieving high performance thin film transistors based on gallium doped
indium zinc tin oxide”, Superlattices and Microstructures 141, 106489 (2020).
(DOI: 10.1016/j.spmi.2020.106489)[5] Lanchao Jia, Jinbao Su, Depeng Liu, Hui Yang, Ran Li, Yaobin Ma, Lixin Yi,Xiqing Zhang, “Investigation on the electrical properties of amorphous IndiumZinc-Titanium-Aluminum Oxide thin film transistors”, Materials Science inSemiconductor Processing 106, 104762 (2020).
(DOI: 10.1016/j.mssp.2019.104762)[4] Depeng Liu, Lanchao Jia, Jinbao Su, Yaobin Ma, Ran Li, Shiqian Dai, YeWang, Hui Yang, Xiqing Zhang, “Investigation on electrical characteristics ofamorphous InZnSnMgO thin film transistors deposited at room-temperature”, J.
Mater. Sci.: Mater. Electron. 30, 20551-20555 (2019). (DOI: 10.1007/s10854019-02419-1)[3] Jinbao Su, Yaobin Ma, Hui Yang, Ran Li, Lanchao Jia, Depeng Liu, and Xiqing
Zhang, “Electrical characteristics of Li and N co-doped amorphous InZnSnO thinfilm transistors”, J. Vac. Sci. Technol. A 37, 061511 (2019).
(DOI: 10.1116/1.5127889)[2] Jinbao Su, Ran Li, Yaobin Ma, Shiqian Dai, Ye Wang, Hui Yang, XiqingZhang,“Annealing temperature effects on the structural and electrical properties of Ndoped In-Zn-Sn-O thin film transistors”, J. Alloy. Compd. 801, 33-39 (2019).
(DOI: 10.1016/j.jallcom.2019.06.044)[1] Jinbao Su, Qi Wang, Yaobin Ma, Ran Li, Shiqian Dai, Ye Wang, Hui Yang,Xiqing Zhang, “Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin filmtransistors”, Materials Research Bulletin 111, 165-169 (2019).
(DOI: 10.1016/j.materresbull.2018.11.018)

学会発表 (10)[10] 楊 卉，Prashant Ghediya，張 雨橋，松尾保孝，曲 勇作，太田裕道, “強誘電体HfO2-ZrO2 ゲート透明 InSnZnOx 薄膜メモリー”, “全固体電気化学熱トランジスタ”, 第 70 回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023 年 3 月 15 日-18 日

[9] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field
Thermopower Modulation Analyses of High Mobility In-Sn-Zn-O Thin FilmTransistors”, 7th International Conference on Advances in Functional Materials(AFM 2023), Fukuoka, Japan, January 9-12, 2022 (Oral)[8] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field
Thermopower Modulation Analyses of Transistor Characteristics of High-mobility
In-Sn-Zn-O Thin Film Transistors”, The 29th International Display Workshops(IDW ’22), Fukuoka, Japan, December 14-16, 2022. Best Student Paper Award[7] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi
Ohta, “Origin of High-Mobility in Transparent Oxide Semiconductor Thin FilmTransistors toward Super High-Definition Displays”, The 23rd RIES-HokudaiInternational Symposium 拓 [Taku], Sapporo, Japan, December 5-6,
2022. Poster Award[6] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi
Ohta, ” Thermopower Modulation Analyses of High-mobility Transparent
Amorphous Oxide Semiconductor InSnZnOx Thin-Film Transistors”, 薄膜材料デバイス
研究会 第 19 回研究集会 in 京都, 龍谷大学響都ホール（京都府京都市）, 2022 年 11 月
17 日-18 日. ベストペーパーアワード[5] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi
Ohta, “Thermopower Modulation Analyses of High-mobility InSnZnOx Thin-FilmTransistors”, 令和 4 年度日本セラミックス協会東北北海道支部研究発表会, 伝国の杜（山形県米沢市）, 2022 年 11 月 10 日-11 日. 優秀発表賞[4] 楊 卉，張 雨橋, 松尾保孝, 太田裕道, “高移動度 InSnZnOx 薄膜トランジスタの熱電能電界変調”, 2022 年 第 83 回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022 年 9 月 20 日-23 日[3] Hui Yang, Xiqing Zhang, “Off current reduction of InSnZnOx-based thin filmtransistors by Ga-addition”, 2022 年 第 69 回 応用物理学会春季学術講演会, 青山学院
大学 相模原キャンパス+Online, March 22-26, 2022 (Oral).
[2] Hui Yang, Xiqing Zhang, “Off current reduction of InSnZnOx-based thin filmtransistors by Ga-addition”, 第 57 回応用物理学会北海道支部/第 18 回日本光学会北海道支部 合同学術講演会, Online, January 8-9, 2022 (Oral).

[1] Hui Yang, Xiqing Zhang, “High-Performance Amorphous In-Zn-Sn-Ga OxideTFTs”, The 22nd RIES-HOKUDAI International Symposium 癒 [Yu], Online,
December 6-7, 2021 (Poster).

受賞 (4)[4] Hui Yang, Best Student Paper Award, The 29th International Display
Workshops (IDW ’22), Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi
Ohta, “Electric Field Thermopower Modulation Analyses of Transistor
Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors”, The 29th
International Display Workshops (IDW ’22), Fukuoka, Japan, December 14-16,
2022. Certificate[3] Hui Yang, Poster Award, The 23rd RIES-Hokudai International
Symposium, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, andHiromichi Ohta, “Origin of High-Mobility in Transparent Oxide Semiconductor Thin
Film Transistors toward Super High-Definition Displays”, The 23rd RIES-HokudaiInternational Symposium 拓 [Taku], Sapporo, Japan, December 5-6,2022. Certificate[2] Hui Yang, ベストペーパーアワード, 薄膜材料デバイス研究会 第 19 回研究集会 in 京都,Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta, ”
Thermopower Modulation Analyses of High-mobility Transparent Amorphous
Oxide Semiconductor InSnZnOx Thin-Film Transistors” (2022.11.18) 賞状[1] Hui Yang, 優秀発表賞, 令和 4 年度日本セラミックス協会東北北海道支部研究発表会,“Thermopower Modulation Analyses of High-mobility InSnZnOx Thin-FilmTransistors”, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, andHiromichi Ohta (2022.11.11) 賞状

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[19] “北大，高性能透明酸化物の高電子移動度の起源解明”, オプトロニクスオンライン,
2022.10.11[18] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, マピオン, 2022.10.11[17] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, BIGLOBE,
2022.10.11[16] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, NEWS PICKS,
2022.10.11[15] “Clarification of material properties for clearly better displays”, Mirage,
2022.10.14[14] “Clarification of material properties for clearly better displays”, AlphaGalileo,
2022.10.14[13] “Clarification of material properties for clearly better displays”, nanowerk,
2022.10.14[12] “Analyzing a new material that promises faster, higher resolutiondisplays”, Phys.org, 2022.10.14[11] “Clarification of material properties for clearly better displays”, ScienceDaily,
2022.10.14[10] “Clarification of material properties for clearly better displays”, Day tonews.com, 2022.10.15[9] “Clarification Of Material Properties For Clearly Better Displays”, VerveTimes,
2022.10.15[8] “Clarification Of Material Properties For Clearly Better Displays”, SWIFTTELECAST, 2022.10.15[7] “Analyzing A New Material That Promises Faster, Higher ResolutionDisplays”, SWIFT TELECAST, 2022.10.15[6] “Clarification of material properties for clearly better displays”, Asia ResearchNews, 2022.10.15[5] “Clarification of fabric properties for clearly higher shows”, NM PRO NewsMagazine, 2022.10.16

[4] “Clarify material properties for better presentations with clarity”, precaliga,
2022.10.15[3] “Clarification of material properties for dramatically bettervisualizations”, pandora-uk.org, 2022.10.15[2] “重磅！ITZO 电子迁移率是 IGZO 的 5 倍以上”, Wit OLED, 2022.10.15[1] “New Material Offers Faster and Higher Resolution Displays”, AZO Materials,
2022.10.17