28th JSAP Awards (Year 2006)
Prof. Hiroshi Ishihara
Chairman, JSAP Award Selection Committee
The selection committee had solicited application for the candidates
for the 28th JSAP awards through our monthly journal ”OYO BUTURI”
from January to March issues (both self-recommendation and appropriaterecommendation). The committee accepted 31 candidate papers for JJAPAwards for the Best Original Paper, 16 for JJAP Awards for the Most Promising Young Scientists, and 20 recommended documents for JSAP Awardfor the Best Review Paper. Three members were in charge of reference foreach candidate paper and based on their report, the committee discussed
and decided on the first-stage candidates. Then all the committee members

reread all the selected papers and through the process of discussion andexamination, decided the second-stage candidates and report them to theboard meeting. Also, in this process, the member who was included as an
author of candidate paper did not join the selection. After final deliberation at the board meeting, we decided to present awards to the following
winners. The awards ceremony was held on August 29 after the Autumn
Meeting of the Japan Society of Applied Physics (Ritsumeikan University). Inaddition, commemorative speeches of the winners were held at the relevant
workshop sited from August 29 to September 1.

Recipient List
1. Award for the Best Original Paper(1) Recipients:
Kwi Young YUN, Dan RICINSCHI, Takeshi KANASHIMA, Minoru
NODA and Masanori OKUYAMA (Osaka Univ.)
Giant Ferroelectric Polarization Beyond 150 µC/cm2 in BiFeO3 Thin
Film
Jpn. J. Appl. Phys. Vol.43, No.5A, 2004, pp.L647-L648(2) Recipients:
Seiji HORIGUCHI, Akira FUJIWARA, Hiroshi INOKAWA andYasuo TAKAHASHI ( NTT )Analysis of Back-Gate Voltage Dependence of Threshold Voltageof Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-EffectTransistor and Its Application to Si Single-Electron Transistor
Jpn. J. Appl. Phys. Vol.43, No.4B, 2004, pp.2036-2040(3) Recipients:
Naoyuki ORIHASHI, Shinnosuke HATTORI, Safumi SUZUKI andMasahiro ASADA ( Tokyo Institute of Technology)
Experimental and Theoretical Characteristics of Sub-Terahertz andTerahertz Oscillations of Resonant Tunneling Diodes Integrated withSlot Antennas
Jpn. J. Appl. Phys. Vol.44, No.11, 2005, pp.7809-7815(4) Recipients:
Masataka HIGASHIWAKI and Toshiaki MATSUI(National Institute of Information and Communications Technology)
AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain
Cut-off Frequency of 152 GHz on Sapphire Substrates
Jpn. J. Appl. Phys. Vol.44, No.16, 2005, pp.L475-478(5) Recipient:Kazuo HOTATE and Toyohiko YAMAUCHI (Univ. of Tokyo)
Fiber-Optic Distributed Strain Sensing System by Brillouin
Optical Correlation Domain Analysis with a Simple and AccurateTime-Division Pump-Probe Generation Scheme
Jpn. J. Appl. Phys. Vol.44, No.32, 2005, pp.L1030-L1033(6) Recipient:Tsutomu ISHI, Junichi FUJIKAWA, Kikuo MAKITA, Toshio BABA
and Keishi OHASHI (NEC)Si Nano-Photodiode with a Surface Plasmon Antenna
Jpn. J. Appl. Phys. Vol.44, No.12, 2005, pp.L364-L366

2. Award for the Most Promising Young Scientist(1) Hidemi TOYOSAKI ( Tohoku Univ.)
A Ferromagnetic Oxide Semiconductor as Spin Injection Electrode in
Magnetic Tunnel Junction

Hidemi TOYOSAKI, Tomoteru FUKUMURA, Kazunori UENO, Masaki
NAKANO and Masashi KAWASAKI
Jpn. J. Appl. Phys. Vol.44, No.28, 2005, pp.L896-L898(2) Atsushi TSUKAZAKI ( Tohoku Univ.)
Blue Light-Emitting Diode Based on ZnOAtsushi TSUKAZAKI, Masashi KUBOTA, Akira OHTOMO, Takeyoshi
ONUMA, Keita OHTANI, Hideo OHNO, Shigefusa F.CHICHIBU andMasashi KAWASAKI
Jpn. J. Appl. Phys. Vol.44, No.21, 2005, pp.L643-L645(3) Toshihiro TSUJI(National Institute of Advanced Industrial Science and Technology)
Evaluation of Domain Boundary of Piezo/Ferroelectric Material by
Ultrasonic Atomic Force Microscopy

Toshihiro TSUJI, Hisato OGISO, Jun AKEDO, Shigeru SAITO, Kenji
FUKUDA and Kazushi YAMANAKAJpn. J. Appl. Phys. Vol43, No.5B, 2004, pp.2907-2913(4) Hidekazu MIMURA (Osaka Univ.)
Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez
Mirrors

Hidekazu MIMURA, Satoshi MATSUYAMA, Hirokatsu YUMOTO,
Hideyuki HARA, Kazuya YAMAMURA, Yasuhisa SANO, Masafumi
SHIBAHARA, Katsuyoshi ENDO, Yuzo MORI, Yoshinori NISHINO,Kenji TAMASAKU, Makina YABASHI, Tetsuya ISHIKAWA and Kazuto
YAMAUCHI
Jpn. J. Appl. Phys. Vol.44, No.18, 2005, pp.L539-L542(5) Masayuki FUJITA (Kyoto Univ.)
Optical and Electrical Characteristics of Organic Light-Emitting Diodes
with Two-Dimensional Photonic Crystals in Organic/Electrode Layers

Masayuki FUJITA, Kuniaki ISHIHARA, Tetsuya UENO, Takashi ASANO,
Susumu NODA, Hiroshi OHATA, Taishi TSUJI, Hitoshi NAKADA andNoriyuki SHIMOJI
Jpn. J. Appl. Phys. Vol.44, No.6A, 2005, pp.3669-3677

3. Award for the Best Review Paper(1) Recipients:
Yasuhiko ARAKAWA, Shiro TSUKAMOTO (Univ. of Tokyo)
Advances and prospects of fabrication of low-dimensional quantum
structures and device applications : Mainly focusing on quantum dotsOYO BUTURI, Vol.74 (2005) NO.3, pp.293-306, Comprehensive ResearchReport(2) Recipient:
Yoshinobu BABA (Nagoya Univ.)
Development of Nano-biodevices and their application to researchfor genomics and proteomics
OYO BUTURI, Vol.74 (2005) NO.12, pp.1543-1554, ComprehensiveResearch Report(3) Recipient:
Hiroyuki MATSUNAMI (Kyoto Univ.)
Technological Breakthroughs in Growth Control of Silicon Carbide
for High Power Electronic Devices
Jpn. J. Appl. Phys. Vol.43, No.10, 2004, pp.6835-6847

JSAP International No.15 (January 2007)25