梁 豆豆 LIANG, Dou-Dou
liangdoudou1993(at)foxmail.com

居室：北キャンパス電子科学研究所 3F 03-106
TEL : 011-706-9433 / FAX : 011-706-9432
研究キーワード：熱電変換, 透明酸化物半導体

略歴2018 年 10 月－2020 年 10 月: 特別研究学生, 北海道大学 電子科学研究所 (指導教員:太田裕道 教授)
2015 年 9 月－現在: 博士課程, 北京科技大（USTB）材料科学工学科 (指導教員: Prof.
Boping Zhang)
2011 年 9 月―2015 年 7 月: 学士（工学）, 曁南大学 材料科学工学科

原著論文 (8)[8] Dou-dou Liang*, Binjie Chen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, andHiromichi Ohta*, “Two-dimensional Channel Thickness Optimization in Tin Dioxidebased Top-gated Thin-Film Transistor using Electric Field Thermopower Modulation”,
under review[7] Dou-dou Liang*#, Binjie Chen#, Hai Jun Cho, and Hiromichi Ohta*, “Thickness
Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide
Thin-Film Transistor”, ACS Appl. Electron. Mater. 2, XXXX-XXXX (2020). (October
9, 2020) (DOI:10.1021/acsaelm.0c00711)[6] Mian Wei#, Lizhikun Gong#, Dou-dou Liang#, Hai Jun Cho*, and Hiromichi
Ohta*,“FabricationandOperating

Semiconducting SrSnO3-based

MechanismThinFilmofDeep-UV

Transparent

Transistor”, Adv.

Electron.

Mater. 6, 2000100 (2020). (June 15, 2020) (DOI: 10.1002/aelm.202000100) (#Equally contributed to this work) Press release[5] Dou-dou Liang*, Yu-qiao Zhang, Hai Jun Cho and Hiromichi Ohta*, “Electricfield thermopower modulation analyses of the operation mechanism of transparent
amorphous SnO2 thin-film transistor”, Appl. Phys. Lett. 116, 143503 (2020). (April8, 2020) (DOI: 10.1063/5.0003153) arXiv[4] D.-D. Liang, Z.H. Ge, H.Z. Li, B.P. Zhang, F. Li, “Enhanced thermoelectric
property in superionic conductor Bi-doped Cu1.8S”, J. Alloys Compd. 708 (2017)
169–174.
[3] D.-D. Liang, B.-P. Zhang, L. Zou, “Enhanced thermoelectric properties ofCu1.8S by Ti-doping induced secondary phase”, J. Alloys Compd. 731 (2018) 577–583.
[2] D.-B. Zhang, H.-Z. Li, B.-P. Zhang, D.-D. Liang, M. Xia, “Hybrid-structuredZnO thermoelectric materials with high carrier mobility and reduced thermalconductivity”, RSC Adv. 7 (2017) 10855–10864.
[1] J. Pei, B.-P. Zhang, J.-F. Li, D.-D. Liang, “Maximizing thermoelectricperformance of AgPbmSbTem+2 by optimizing spark plasmasintering
temperature”, J. Alloys Compd. 728 (2017) 694–700.

学会発表 (9)[9] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric fieldthermopower modulation analyses of the operation mechanism of transparent
amorphous SnO2 thin-film transistor”, Pacific Rim Meeting on Electrochemical andSolid State Science (PRiME 2020), Honolulu, HI (or online), October 4-9, 2020.
[8] Doudou Liang, Binjie Chen, Hai Jun Cho, Hiromichi Ohta, “Electric Field
Thermopower Modulation Analyses of the Channel Thickness for SnO 2 Thin FilmTransistors”, 2020 年 第 81 回応用物理学会秋季学術講演会, online, September 8-11,
2020.
[7] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric fieldthermopower modulation analyses of the operation mechanism of amorphous
SnO2 thin film transistor”, The 67th JSAP Spring Meeting 2020 (canceled, thepresentation has been established), Sophia University, Tokyo, March 12-15, 2020
[6] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “熱電能電界変調法によるアモルファス SnO2 透明薄膜トランジスタ動作解析”, The 55th Japan Society ofApplied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12,
2020. 第 23 回応用物理学会北海道支部発表奨励賞 受賞[5] Doudou Liang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower
modulation of high-mobility SnO2 transparent thin film transistor”, The 3rdWorkshop on Functional Materials Science, Sapporo, Japan, December 18th-20th,
2019. (Poster)[4] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric fieldthermopower modulation analyses of high mobility transparent amorphous
SnO2 thin film transistor”, RIES-NCTU Workshop, Hokkaido University, Sapporo,Japan, December 3-4, 2019. (Poster)[3] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric fieldthermopower modulation analyses of high mobility transparent amorphous
SnO2 thin film transistor”, The 20th RIES-HOKUDAI International Symposium,
Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)[2] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric fieldthermopower modulation of amorphous SnO2 transparent thin film transistor”, 薄膜材料デバイス研究会 第 16 回研究集会 in 京都「新時代に向けた薄膜材料のデバイス技術」, 龍谷
大学 響都ホール, 京都府京都市, 2019 年 11 月 8 日-9 日(Oral) スチューデントアワード受賞[1] Dou-DouLiang,Bo-PingZhang,JunPei,“Enhancedthermoelectricperformance of MoS2 by Sb-doping”, The 19th RIES-HOKUDAI International
Symposium 組 [So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018(Poster).

受賞 (6)[6] 第 23 回応用物理学会北海道支部発表奨励賞, (2020.3.9) Dou-dou Liang, Yuqiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “熱電能電界変調法によるアモルファス SnO2
透明薄膜トランジスタ動作解析”, 第 55 回応用物理学会北海道支部/第 16 回日本光学会北海道支部合同学術講演会 賞状 写真[5] スチューデントアワード, 薄膜材料デバイス研究会 第 16 回研究集会 in 京都「新時代に向けた薄膜材料のデバイス技術」, “Electric field thermopower modulation of amorphous
SnO2 transparent thin film transistor”, Dou-dou Liang, Yu-qiao Zhang, Hai JunCho, and Hiromichi Ohta, 龍谷大学 響都ホール, 京都府京都市, 2019 年 11 月 8 日-9 日(Oral) 賞状 写真報道 (3)[1] OPTRONICS ONLINE, “北大，DUV を透過する透明トランジスタを実現” (2020.6.16)[2] fabcross for エンジニア, “深紫外線を透過する透明な薄膜トランジスタを作製――殺菌灯照射下でも動作可能な新バイオセンサーへの応用に期待 北海道大学” (2020.6.17)[3] e.x.press, “深紫外線線を透過する透明なトランジスタを実現” (2020.6.24)