魏 冕 WEI, Mian

居室：北キャンパス電子科学研究所 3F 03-106
TEL : 011-706-9433 / FAX : 011-706-9432
研究キーワード：透明酸化物半導体
0000-0001-9793-4325

略歴
Ph. D candidate, Graduate School of Information Science and Technology, Hokkaido
University, Japan, Oct. 2018-September 2021. Dr. Eng.
M.InfoSci, Graduate School of Information Science and Technology, Hokkaido
University, Japan, Oct. 2016-September 2018.
B.E. Electronic Science and Technology at UESTC (University of Electronic Science andTechnology of China)

原著論文 (9)[9] Mian Wei*, Hai Jun Cho, and Hiromichi Ohta*, “Tuning of the optoelectronic
properties for transparent oxide semiconductor ASnO3 by modulating the size of Aions”, ACS Appl. Electron. Mater. 2, 3971-3976 (2020). (December 8, 2020) (DOI:10.1021/acsaelm.0c00806)[8] Mian Wei#, Lizhikun Gong#, Dou-dou Liang#, Hai Jun Cho*, and Hiromichi Ohta*,“Fabrication and Operating Mechanism of Deep-UV Transparent
Semiconducting SrSnO3-based Thin Film Transistor”, Adv. Electron. Mater. 6, 2000100(2020). (June 15, 2020) (DOI: 10.1002/aelm.202000100) (# Equally contributed tothis work) Press release[7] Hai Jun Cho,* Koichi Sato, Mian Wei, Gowoon Kim, and Hiromichi Ohta*, “Effectof lattice distortions on the electron and thermal transport properties of transparent
oxide semiconductor Ba1-xSrxSnO3 solid solution films”, J. Appl. Phys. 127, 115701(2020). (March 17, 2020) (DOI: 10.1063/5.0002172) Editors’ pick[6] Mian Wei, Anup Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho*, and Hiromichi
Ohta*, “High electrical conducting deep-ultraviolet-transparent oxide semiconductor
La-doped SrSnO3 exceeding ~3000 S cm−1”, Appl. Phys. Lett. 116, 022103 (2020).
(January 13th, 2020) (DOI: 10.1063/1.5128410)[5] Hai Jun Cho*, Bin Feng, Takaki Onozato, Mian Wei, Anup Sanchela, Yuichi
Ikuhara, and Hiromichi Ohta*, “Investigation of electrical and thermal transport
property reductions in La-doped BaSnO3 films”, Phys. Rev. Materials 3, 094601(2019). (September 3rd, 2019) (DOI: 10.1103/PhysRevMaterials.3.094601) Editors’
Suggestion[4] Anup Sanchela*, Mian Wei, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, BinFeng, Yuichi Ikuhara, Hai Jun Cho, Hiromichi Ohta*, “Buffer layer-less fabrication ofhigh-mobility transparent oxide semiconductor, La-doped BaSnO3”, Journal of
Materials Chemistry C 7, 5797-5802 (2019). (DOI: 10.1039/C8TC06177G)[3] Anup V. Sanchela*, Mian Wei, Hai Jun Cho, and Hiromichi Ohta*, “Thermopower
modulation clarification of the operating mechanism in wide bandgap

BaSnO3−SrSnO3 solid-solution based thin film transistors”, Small 15, 1805394(2019).(DOI: 10.1002/smll.201805394)[2] Hai Jun Cho*, Takaki Onozato, Mian Wei, Anup Sanchela, and Hiromichi Ohta*,“Effects of vacuum annealing on the electron mobility of epitaxial La-doped
BaSnO3 films”, APL Mater. 7, 022507 (2019). (DOI: 10.1063/1.5054154)[1] Anup V. Sanchela*, Mian Wei, Haruki Zensyo, Bin Feng, Joonhyuk Lee, Gowoon
Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta*, “Large thickness
dependence of the carrier mobility in a transparent oxide semiconductor, La-doped
BaSnO3“, Appl. Phys. Lett. 112, 232102 (2018).

学会発表 (16)[16] M. Wei, L. Gong, R. Yu, H.J. Cho, H. Ohta, T. Katayama, “Single-Crystalline
La:SrSnO3 Conductive Sheet with Wide Bandgap of 4.2 eV”, 第 82 回 応用物理学会秋季学術講演会, online, 2021.9.10-13.
[15] Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Modulation of Optical andElectronical Properties for Transparent Oxide Semiconductor ASnO3 by the A-site ion
substitution (GG02)”, 63rd Electronic Materials Conference (EMC 2021), Virtual, June
23-25, 2021
[14] Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Tuning of the Optoelectronic
Properties for Transparent Oxide Semiconductor ASnO3 by Modulating the Size of Aions (21-3507)”, The 8th International Congress on Ceramics (ICC8), Virtual, April 2530, 2021.
[13] Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Band Engineering of Transparent
Oxide Semiconductor ASnO3 (A = Ba, Ca, and Sr)”, 2021 年 第 68 回 応用物理学会春季
学術講演会, online, 2021.3.16-19.
[12] M. Wei. H.J. Cho, and H. Ohta, “Optoelectronic properties of La-doped CaSnO3SrSnO3-BaSnO3“, 第 56 回 応用物理学会北海道支部/第 17 回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10.

[11] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, andHiromichi Ohta, “New Deep-Ultraviolet Transparent Oxide Semiconductor, La-doped
SrSnO3“, The 3rd Workshop on Functional Materials Science, Sapporo, Japan,December 18th-20th, 2019. (Poster)[10] Mian Wei, Anup V. Sanchela, Hai Jun Cho, and Hiromichi Ohta, “High electricalconductivity exceeding ~3000 S cm−1 of a transparent oxide semiconductor, La-doped
SrSnO3“, Materials Research Meeting 2019, Yokohama, Japan, December 10-14, 2019[9] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, andHiromichi Ohta, “Epitaxial film growth of a deep-ultraviolet transparent oxide
semiconductor, La-doped SrSnO3“, RIES-NCTU Workshop, Hokkaido University,Sapporo, Japan, December 3-4, 2019. (Poster)[8] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, andHiromichi Ohta, “Epitaxial film growth of a deep-ultraviolet transparent oxide
semiconductor, La-doped SrSnO3“, The 20th RIES-HOKUDAI International Symposium,
Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)[7] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, andHiromichi Ohta, “New Deep-Ultraviolet Transparent Oxide Semiconductor, La-dopedSrSnO3“, TOEO-11, Nara, Japan, October 7-9, 2019 Best Poster Award (Gold)[6] 魏 冕，Anup Sanchela，馮 斌, 幾原雄一, Hai Jun Cho, 太田裕道, “3000 S cm−1 を超える高導電性深紫外透明酸化物半導体 La ドープ SrSnO3“, 2019 年 第 80 回応用物理学会秋季学術講演会, 北海道大学 札幌キャンパス, 北海道札幌市, 2019 年 9 月 18 日-21 日.
[5] Mian Wei, Anup V. Sanchela, Hai Jun Cho, Hiromichi Ohta, “Thermopoweranalysis of effective mass in a transparent oxide semiconductor, La-dopedSrSnO3“, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View
Hotel, Sapporo, December 11th-12th, 2018 (Poster) Poster Award[4] M. Wei, A. Sanchela, J. Lee, G. Kim, H. Jeen, B. Feng, Y. Ikuhara, H. Cho, and H.
Ohta, “Electron mobility improvement of La-doped BaSnO3 films grown under theozone atmosphere”, The 2nd Workshop on Functional Materials Science, Busan, SouthKorea, October 22-23, 2018[3] M. Wei, A. Sanchela, J. Lee, G. Kim, H. Jeen, B. Feng, Y. Ikuhara, H. Cho and H.
Ohta, “A perverse transparent oxide semiconductor, La:BaSnO3“, 2018 年 第 79 回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018 年 9 月 18 日-21 日

[2] Mian Wei, Anup V. Sanchela, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen
Jeen, Yuichi Ikuhara, and Hiromichi Ohta, “Origin of Mobility Suppression in La-doped
BaSnO3 Films (II)”, 2018 年 第 65 回応用物理学会春季学術講演会, Waseda University(Tokyo), 17-20 March, 2018 (Domestic)[1] M. Wei, A. V. Sanchela, B.Feng, J. Lee, G. Kim, H. Jeen, Y. Ikuhara and H. Ohta,“Origin of mobility suppression in La-doped BaSnO3 films”, 第 53 回応用物理学会北海道支部/第 14 回日本光学会北海道支部合同学術講演会, Hokkaido University, 6-7 Jan. 2018
(Domestic) Encouragement Award受賞 (3)[3] Best Poster Award (Gold) at 11th International Symposium on Transparent Oxideand Related Materials for Electronics and Optics (TOEO-11) (October 9th, 2019). “NewDeep-Ultraviolet Transparent Oxide Semiconductor, La-doped SrSnO3“, Mian Wei*,Anup Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta 賞状 写真[2] Poster Award for the Presentation in The 19th RIES-Hokudai InternationalSymposium. (December 12th, 2018) Mian Wei, Anup V. Sanchela, Hai Jun Cho,Hiromichi Ohta, “Thermopower analysis of effective mass in a transparent oxide
semiconductor, La-doped SrSnO3“, The 19th RIES-HOKUDAI International Symposium
組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster) 賞状[1] Encouragement Award for Presentation in Hokkaido Branch of the Japan Society ofApplied Physics, Mian Wei, Anup V. Sanchela, Bin Feng, Joonhyuk Lee, Gowoon Kim,
Hyoungjeen Jeen, Yuichi Ikuhara, Hiromichi Ohta, “Origin of mobility suppression in
La-doped BaSnO3 films”, The 53rd JSAP Hokkaido Branch Meeting, Hokkaido
University, Sapporo, Japan, 6-7 January, 2018 賞状

報道 (3)[1] OPTRONICS ONLINE, “北大，DUV を透過する透明トランジスタを実現” (2020.6.16)[2] fabcross for エンジニア, “深紫外線を透過する透明な薄膜トランジスタを作製――殺菌灯照射下でも動作可能な新バイオセンサーへの応用に期待 北海道大学” (2020.6.17)[3] e.x.press, “深紫外線線を透過する透明なトランジスタを実現” (2020.6.24)