テニュアトラック推進本部■テニュアトラック推進本部（工学テニュア） 業績一覧 2017年〔査読付学術原著論文〕 7件
題目
Fabrication and Characterization of Fe/Polyurethane
Nanofiber Actuator Prepared by Electrospinning
NMR investigation about heterogeneous structure anddynamics of recombinant spider silk in the dry andhydrated states

著者
Sakamoto, Hiroaki;Amaya, Satoshi;Sunahase, Yuki;Suye,Shin-ichiro

掲載誌,巻,号(出版年月)頁
JOURNAL OF FIBER SCIENCE AND TECHNOLOGY,73,6(2017.06)135-138

Tasei, Y., Nishimura, A., Suzuki, Y., Sato, T. K., Sugahara,J., Asakura, T.

Macromolecules,50,20 (2017.10)8117-8128

スケッチマップにおける建築記号の多義性に着目した共起性の評価-フランシュコンテ大学を対象とした建築記号の解 木曽久美子
釈としての認知地図の分析-

日本建築学会計画系論文集,vol.82,No.742 (2017.12)30813091

Characterization of protein adsorption on stretchedpolyurethane nanofibers prepared by electrospinning

Morita Yuko, Sakamoto Hiroaki, Suye Shin-ichiro

RSC Advances,260 (2017.12)705-709

Current Collapse Reduction in AlGaN/GaN HEMTs byHigh-Pressure Water Vapor Annealing

J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H.
Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M.
Kuzuhara

IEEE Transactions on Electron Devices,62 (2015.08)24232428

Impact of oxygen plasma treatment on the dynamic onresistance of AlGaN/GaN high-electron-mobility
transistors

J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda,
Applied Physics Express,8 (2015.10)111001-1-111001-4
T. Hashizume, and M. Kuzuhara

An Electrochemical DNA Sensing System Using Modified
Nanoparticle Probes for Detecting Methicillin-Resistant
Staphylococcus aureus.

Sakamoto Hiroaki;Amano Yoshihisa;Satomura
Takenori;Suye Shin-Ichiro〔査読付国際会議論文〕 18件
題目著者Methods in molecular biology (Clifton, N.J.),1572,(2017)13-22

掲載誌,巻,号(出版年月)頁

Effect of Reverse Bias Annealing on the Properties ofAlGaN/GaN MIS-HEMTs with Recessed-gate Structure

W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M.
Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2017) (2017.06)88-89

Reduced Current Collapse in Multi-Fingered AlGaN/GaN
MOS-HEMTs with Dual Field Plate

Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni
Tokuda and Masaaki Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2017) (2017.06)92-93

Analytical derivation of interface state density from subthreshold swing in AlGaN-GaN metal-insulatorsemiconductor high-electron mobility transistors

Hirokuni Tokuda, Joel T. Asubar, and Masaaki Kuzuhara

Japanese Journal of Applied Physics,56 (2017.09)1041011-104101-5

Correlation of AlGaN-GaN high-electron-mobility
transistors electroluminescence characteristics withcurrent collapse

Shintaro Ohi, Taisei Yamazaki, Joel T. Asubar, Hirokuni
Tokuda, and Masaaki Kuzuhara

Applied Physics Express,11 (2018.01)024101-1-024101-4

Suppressed Current Collapse in High Pressure WaterVapor Annealed AlGaN/GaN HEMTs

Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M.
Horita, Y. Uraoka, and M. Kuzuhara

CS MANTECH, Tech Dig.,2015 (2015.05)185-188

Correlation between Electroluminescence and Current
Collapse in AlGaN/GaN HEMTs

S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M.
Kuzuhara

CS MANTECH, Tech Dig.,2015 (2015.05)265-268

Improved Current Collapse in AlGaN/GaN HEMTs with 3- A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M.
Dimensional Field Plate StructureKuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2015) (2015.06)36-37

Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for
AlGaN/GaN heterostructures

A. Sasakura, J. T. Asubar, H. Tokuda, and M. Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2015) (2015.06)42-43

Current Collapse in AlGaN/GaN HEMTs with a GaN Cap
Layer

S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M.
Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2015) (2015.06)48-49

High Drain Current and Low On-Resistance in
AlGaN/GaN HEMTs with Au-Plated Ohmic Electrodes

Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, and M.
Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2015) (2015.06)52-53

Highly Reduced Current Collapse in AlGaN/GaN HEMTs
by Combined Application of Oxygen Plasma Treatment and J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
Field-plate Structures

Japanese Journal of Applied Physics,55(2016.03)04EG07-1-04EG07-5

Large As sublattice distortion in sphalerite ZnSnAs2 thinfilms revealed by x-ray fluorescence holography

K. Hayashi, N. Uchitomi, K. Yamagami, A. Suzuki, Y.
Yoshizawa, J. T. Asubar, N. Happo, S. Hosokawa

Journal of Applied Physics (2016.03)125703-1-125703-9

AlGaN/GaN HEMTs on Free-standing GaN Substrates
with Breakdown Voltage of 5 kV and Effective Lateral
Critical Field of 1 MV/cm

J. Ng, J. T. Asubar, H. Tokuda, M, Kuzuhara

CS MANTECH, Tech Dig. (2016) 215,2016 (2016.05)215218

Breakdown degradation of AlGaN/GaN HEMTs with multi- T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda,
finger gate patterns
and M. Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2016) (2016.06)96-97

Effect of metal electrode edge irregularities on breakdown S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M.
voltages of AlGaN/GaN HEMTs
Kuzuhara

IEEE International Meeting for Future of Electron Devices
Kansai (IMFEDK 2016) (2016.06)94-95

Pushing the GaN HEMT towards its theoretical limit

J. T. Asubar, J. Ng, H. Tokuda, M, Kuzuhara

Compound Semiconductor Magazine,22 (2016.10)26-31

Highly-stable and low-state-density Al2O3-GaN
interfaces using epitaxial n-GaN layers grown on freestanding GaN substrates

S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar, andT. Hashizume

Applied Physics Letters,109 (2016.10)162104-1-162104-5

AlGaN/GaN MIS-HEMTs with high on/off current ratio ofover 5 × 1010 achieved by ozone pretreatment and using H. Tokuda, J. T. Asubar, and M. Kuzuhara
ozone oxidant for Al2O3 gate insulator〔講 演〕

Japanese Journal of Applied Physics,55 (2016.11)1203051-120305-4

8件
題目

発表者

会議名,発表番号記号,開催地,抄録集等名（開催年月）

無機ナノ粒子と結合ペプチドの相互作用解析

鈴木悠17-1NMR研究会 (2017.05)

Conformation of silk fibroins stored in silk glands studiedby solution NMR

Suzuki, Y., Asakura, T.

Sheffield Silk Conference (2017.07)

天然液状絹のNMR構造解析

鈴木悠、朝倉哲郎

第66回高分子討論会 (2017.09)

ページ 1

テニュアトラック推進本部
天然液状絹のNMR構造解析

鈴木悠

第62回固体NMR・材料フォーラム (2017.10)

Suppression of insulin aggregation by zwitterionicpolymers: Mechanistic insights

Rajan, R., Suzuki, Y., Matsumura, K.

Materials Research Society fall meeting (2017.11)

Conformation and dynamic properties of silk fibroin in asilk gland

Suzuki, Y.

255th ACS national meeting (2018.03)

プローブ修飾ナノ粒子を利用したMRSAの高感度なバイオセンシングシステムの構築

一木 啓志，坂元 博昭，里村 武範，末 信一朗

電気化学会第84回大会 (2017.03)

生体分子を高配向固定化したカーボンナノ材料の開発

松崎祥平，高村映一郎，坂元博昭，里村武範，末信一朗

電気化学会第84回大会 (2017.03)

〔著 書〕

1件
題目

著者

ACS Books "Stereochemistry and Global Connectivity:
The Legacy of Ernest Eliel"
Asakura, T., Suzuki, Y., Nishimura A.
Solution NMR structure and conformation of silk fibroins
stored in Bombyx mori and Samia cynthia ricini silkworms〔特 許〕

出版社(出版年月)

ACS (2017.11)

1件

題目
プローブ修飾ナノ粒子を用いた有害微生物の高感度バイ
オセンシング〔資料・解説等〕

発明者
坂元 博昭,末 信一朗,里村 武範,

特許番号(登録日)
6198040 (2017.09)

3件
題目

著者

掲載誌,巻,号,頁(出版年月)

家蚕およびエリ蚕液状絹の立体構造

鈴木悠

アグリバイオ,1,6,70-73 (2017.06)

AlGaN/GaN HEMT Technology for High-Voltage and Low
On-Resistance Operation

M. Kuzuhara, J. T. Asubar, H. Tokuda

Japanese Journal of Applied Physics,55,070101-1070101-12 (2016.06)

Insulated gate and surface passivation structures forGaN-based power transistors

Z. Yatabe, J. T. Asubar, and T. Hashizume

Journal of Physics D: Applied Physics,49,393001-1393001-19 (2016.09)

ページ 2