GAU212S-15255 Universal Gate Drive Prototype Board
FEATURE>Built in the isolated DC-DC converter for gate drive>Output peak current is +/-12A(max)>Electrical isolation voltage is 2500Vrms (for 1 minute)>Two way power supply system for drivers and input signal(VD=15V , VIN=5V)>CMOS compatible input interface

RECOMMENDED IGBT MODULES
MITSUBISHI NFH series IGBT modules
VCES = 600V series ~ 400A class
VCES = 1200V series ~ 600A classSize : 60 x 120 x 40t

MITSUBISHI NF series IGBT modules
VCES = 600V series ~ 600A class
VCES = 1200V series ~1400A class

Gate Driver : VLA502-01R

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BLOCK DIAGRAM

VD

REGULATOR
DC-AC
CONVERTER

GND
VIN
300 ohm

AMP

G1

IN1
E1

REGULATOR
DC-AC
CONVERTER

300 ohm

AMP

G2

IN2
E2

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MAXIMUM RATINGS（unless otherwise noted, Ta=25C）

SymbolParameter

Conditions

Ratings

Unit

VD

Supply voltage

DC

16.5

V

VI

Input signal voltage

Applied between VIN – IN1,2
50% Duty cycle , pulse width 1ms-1 ~+7V

Output peak current

Pulse width 2us-12A

12A

Viso

Isolation voltageSine wave voltage 60Hz, for 1min

2500

Vrms

Topr

Operating temperature

No condensation allowable-20 ~ 60

deg CTstg

Storage temperature

No condensation allowable-25 ~ 85

deg CIdrive

Gate drive current

Gate average current (Per one circuit)

210

mA

IOHP
IOLP

ELECTRICAL CHARACTERISTICS( unless otherwise noted, Ta=25C, VD=15V)

SymbolParameter

Conditions

VD

Supply voltage

VIN

Limits

Unit

Min

TypMaxRecommended range

14.2

15

15.8

V

Pull-up voltage on input side

Recommended range

4.75

55.25

VIIH

“H” input signal currentRecommended range

9.51014mAf

Switching frequency

Recommended range

--60

kHz

RG

Gate resistance

Recommended range

1--ohmVOH

Plus bias voltage-

1415.5

16.5

VVOL

Minus bias voltage--11-8-5.5

VtPLH“L-H” propagation time

IIH = 10mA-

0.40.65

ustPHL“H-L” propagation time

IIH = 10mA-

0.40.65us

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R1

INNER CIRCUIT

30

1C3＋

232

RG

24

3

HIC1

Dz1
Dz2

19

CN1G1
E125

426＋ C1CN3VD
GNDNCNCIN1IN2VIN

206＋C221

722R230

1C6＋232

RG

243HIC2Dz3
Dz419CN2G2E2254

HIC1,2
DZ1,2,3,4
RG
C1,2,4,5C3,6
R1,2
CN1,2CN3

VLA502-01R
ISAHAYA
Vz=18V, 500mW
Gate Resistor
1000μF, 35V
Low impedance
100μF, 50V
Low impedance
4.7k ohm, 250mW
B2B-XH-A
JST
B7B-XH-A
JST

26＋ C4620

721＋C522**) Gate Resistor is not installed at the time of shipment.
Please solder the chosen resistor.

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APPLICATION EXAMPLE
R130

1C3+

2323HIC1VD

206+ C1＋C2R2IN2HC04 etc.

G122IN1Input Signal

CN1E12175V

1926

CN3GNDDz1Dz225415VRG

24VIN

30

1C6+

23234RG

24

HIC2Dz3
Dz4

19620

721G2E22526

CN2+ C4+C522**Open-collector(drain) type is not recommended.

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PRECATION(1) Confirmation of gate average current
The maximum rating of output current capacity per one circuit of the gate power supply built-in this product is 210mA. (*)

Therefore the gate average current must be less than 210mA.
Please calculate the gate average current by the following expression.
Idrive = (Q1＋lQ2l ) X f
Idrive : Gate average current
Q1 : Gate charge on plus bias (Please read it from data sheet of IGBT)
Q2 : Gate charge on minus bias (Please read it from data sheet of IGBT)
f: Switching frequency(2) Electric power setting of gate resistanceAt the time of the choice of gate resistance, please choose the resistance which can permit the electric power by the following calculation.
Pd = Idrive X 25 + margin
Pd: Total allowable power loss of gate resistance
Idrive : Gate average current
25: Total output voltage of gate power supply(*) Please refer to derating curve of VLA502 data sheet.

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Part arrangement & Size

Gate Resistor (This part is not installedat the time of shipment)

CONNECTOR

3.75mmCONNECTOR

60mm

Screw hole
3.5

Built in DC-DC converter type
Gate Driver VLA502-01R

3.75mm120mm

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