2018年度発表
主発表者

所属

Atsushi Iizuka

東北大学

Toshihiro Okajima

青山学院大学

Hiroshi Uemachi

関西学院大学

Kazuya Miura

スズキ株式会社

Yi Liu九州大学

Hirotaka Yamaguchia 産業技術総合研究所

Satoshi Masuya

佐賀大学大学院

Mohamed Egiza

九州大学大学院

Hirotomo Nishihara

大阪産業技術研究所

二宮翔

九州大学大学院

発表先
Materials Transactions
Vol.59 No.5 (2018),
843-849
Materials Express
Research, 5 (2018),
046412
Electrochimica Acta,
281 (2018), 99-108

タイトル
Scorodite Synthesis in As(V)-Containing Fe(II) Solution in the
Presence of Hematite as a Fe(III) Source
Geometric structure of Sn dopants in sputtered TiO2 film revealedby x-ray absorption spectroscopy and first-principles DFT
calculations
X-ray absorption near edge structure analysis of the charge–
discharge mechanisms of dithiobiuret polymer used as a highcapacity cathode material for lithium-ion batteries

課題番号1611103PT
1504023F
1011112GT

e-Journal of Surface
Science andDFT Study for Supported Pt Catalysts Focusing on the Chemical
1705030G
Nanotechnology, Vol.16 Potential(2018), 209-213
Polymer Journal,
Smectic Ordered Structure and Water Repellency of a1612115F
51(2018),189-198
Poly(fluoroalkyl acrylate) with a Carbamate Linker
1707063F
Journal of Applied
Stacking faults in β-Ga2O3 crystals observed by X-ray topography 1707054G
Crystallography, 51(2018), 1372-1377
1605029S
1607059S
1609075S
1610092S
Diamond & Related
Dislocations in chemical vapor deposition (111) single crystal
1612119S
Materials, 90 (2018),
diamond observed by synchrotron X-ray topography and their
1601143S
40-46
relation with etch pits
1702003S
1703011S
1704021S
1706047S
1707079S
1410105S
Effects of Air Exposure on Hard and Soft X-ray Photoemission
1508064S
Coatings, 8 (2018), 359 Spectra of Ultrananocrystalline Diamond/Amorphous Carbon
1607062S
Composite Films
1610090S
Journal of Materials
Enhanced hydrogen chemisorption and spillover on non-metallic
1508068S
Chemistry A, 6 (2018),
nickel subnanoclusters
12523-12531
1601149S
鉄と鋼, Vol. 104
軟X線吸収分光法によるフェライト鋼中微量固溶炭素の化学状態観
1705026Pi
No.11(2018), 628-633 察
1707068F

2018年度発表
主発表者

所属

R. Ohtani

九州大学大学院

R. Ohtani

九州大学大学院

Akihiko Toda

山口大学大学院

Naoto Nishiyama

山口大学大学院

A. Kitajou

山口大学

S.Shikata

関西学院大学

S.Shikata

関西学院大学

阪東恭子

産業技術総合研究所

Takayoshi Oshima

佐賀大学大学院

Naoto Nishiyama

山口大学大学院

Hirotomo Nishihara

大阪市立工業研究所

Yogesh Kumar
Maurya九州大学大学院

Hiromasa Suo

産業技術総合研究所

Keitaro Eguchi

名古屋大学大学院

Shinich Shikata

関西学院大学

発表先

タイトル

Inorganic Chemistry, 57 Positive and negative two-dimensional thermal expansions via(2018), 11588-11596
relaxation of node distortions
Dalton Transactions, 48 Consecutive oxidative additions of iodine on undulating 2D(2018), 7198-7202
coordination polymers: formation of I–Pt–I chains andCrystallization and melting behaviors of poly(vinylidene fluoride)
Polymer, 169 (2019),
examined by fast-scan calorimetry: Hoffman-Weeks, Gibbs11-20
Thomson and thermal Gibbs-Thomson plots
Catalysis Science &Factors affecting photocatalytic activity of visible light-responsive
Technology, 8 (2018),
titanium dioxide doped with chromium ions4726-4733
J. Power
Electrochemical properties of titanium fluoride with high rate
Sources,419(2019),1-5 capability for lithium-ion batteries
Japanese Journal ofDislocation analysis of homoepitaxial diamond (001) film by x-ray
Applied Physics, 58
topography(2019), 045503
Japanese Journal ofPrecise measurements of diamond lattice constantApplied Physics, 57(2018), 111301
Bulletin of the Chemical
Photoluminescent Properties and Local Structure of Tb Doped
Society of Japan, 91
Fibrous Alumina(2018), 1731-1738
Japanese Journal ofMeasurements of the band alignment at coherent α-Ga2O3/Al2O3
Applied Physics, 57
heterojunctions(2018), 080308
Catal. Sci. Technol., 8 Factors affecting photocatalytic activity of visible light-responsive(2018), 4726-4733
titanium dioxide doped with chromium ionsJ. Mater. Chem. A, 6
Enhanced hydrogen chemisorption and spillover on non-metallic(2018), 12523-12531
nickel subnanoclusters
J. Am. Chem. Soc., 140, Ground-State Copper(III) Stabilized by N-Confused/N-Linked
22 (2018), 6883-6892 Corroles: Synthesis, Characterization, and Redox Reactivity
Japanese Journal ofEvaluation of the increase in threading dislocation during the initial
Applied Physics, 57
stage of physical vapor transport growth of 4H-SiC(2018), 065501
The Journal of Physical In Situ Real-Time Measurements for Ambipolar Channel Formation
Chemistry C, 122
Processes in Organic Double-Layer Field-Effect Transistors of(2018), 26054-26060
CuPc and F16CuPc
Jap.J.Appl.Phys., 57
Precise measurements of diamond lattice constant using Bond(2018), 111301
method

課題番号1606042F
1606042F
1604027A
1702008A
1607058Ｒ
1607055R
1703009R
1711120R1802001A
1610088R
1411125F
1511110F
1610133F
1712123F
1607058R
1508068S
1802151G
1702007A
1705033F
1707067F
1610088R

2018年度発表
主発表者

所属

澤田啓二

東北大学多元物質科学研究所

J. R. Stellhorn

熊本大学

Noritake Isomura

株式会社豊田中央研究所

Shohei Hayashi

産業技術総合研究所

Hiromasa Suo

産業技術総合研究所

Hiromasa Suo

産業技術総合研究所

Shohei Hayashi

産業技術総合研究所

発表先
X線分析の進歩, 50(2019), 248-260
AIP Conference
Proceedings, 2054
(2019), 050012-1-7
Journal of Synchrotron
Radiation, 26 (2019),
Japanese Journal ofApplied Physics, 58(2019), 011005
Japanese Journal ofApplied Physics, 58(2019), 021001
Japanese Journal ofAppliedPhysics,58(2019),
Japanese Journal ofApplied
Physics,58(2019),

タイトル
X線吸収分光を用いた特殊鋼製鋼スラグ中のFeおよびCrの化学状態分析

課題番号1712138R
1804018R
1807055R
1809076R

Anomalous x-ray scattering experiments for disordered materials at 1706046F
the SAGA Light Source
1802007A
Distinguishing nitrogen-containing sites in SiO2/4H-SiC(0001) after 1706043G
nitric oxide annealing by X-ray absorption spectroscopy
1801149G
Structural analysis of interfacial dislocations and expanded single
Shockley-type stacking faults in forward-current degradation of 4H- 1702007A
SiC p-i-n diodes
Observation of multilayer Shockley-type stacking fault formation
during process of epitaxial growth on highly nitrogen-doped 4H-SiC 1702007A
substrate
Observation of multilayer Shockley-type stacking fault formation
1702007A
during process of epitaxial growth on highly nitrogen-doped 4H-SiC
1802006A
substrate
Structural analysis of interfacial dislocations and expanded single
1702007A
Shockley-type stacking faults in forward-current degradation of 4H1802006A
SiC p-i-n diodes