HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULESDESCRIPTION
VLA552-01R is a hybrid integrated circuit designed for drivingn-channel IGBT modules in any gate-amplifier application.

Dimensions : mm

OUTLINE DRAWINGElectrical isolation voltage between input and output is 4000Vrms
88.0 MAX(for 1minute).This device include the isolated type DC-DC
converter for a Gate drive. Therefore design of the gate
power supply is not required.

42.5MAXThe system of built-in short circuit protection provide a margin
to time by function to maintain reverse bias for a predeterminedtime after the detection of short circuit.
VCES = 1200V series up to 3600A class
VCES = 1700V series up to 3600A class
2.54FEATURES

8.0 MAX•Built-in the isolated type DC-DC converter for gate drive

0.75 +/-0.1

0.7MAX

6.0MAX

11.5MAX

8.0MAX

1•SIP outline allows more space on mother board

3.5+/-1

Recommended IGBT modules:

17.0MAX
30•Built-in short circuit protection (With a pin for fault output)•Possible to assist collector clamp circuit•Variable fall time on activity of short circuit protection•Electrical isolation voltage between input and output is 4000Vrms (for 1minute)•CMOS compatible input.

APPLICATIONS
To drive IGBT modules for general industrial use apparatus.

BLOCK DIAGRAM

19 VccVD

Gi

DC-AC CONVERTER

1234120

REGULATORLATCHTIMER&RESETCIRCUIT

1k

DETECTCIRCUIT

29ttrip
CONTROL30

DETECTPIN

20GND

26

COLLECTOR CLAMPASSIST

25Vcc

23

Vo

VI+ 6
INTERFACE
INTERFACE

24

VI-7

GATE SHUTDOWN CIRCUIT

120

5,17,18 pin : N.C.

27

SHUT-DOWN
SPEED CONTROL

28

FAULT
OUTPUT

21VEE

22

HYBRID ICVLA552-01R
DRIVER FOR IGBT MODULES

MAXIMUM RATINGS (Unless otherwise noted, Ta=25°C)
SymbolRatings

UnitVD

Supply voltage

DC-1 ~ 16.5

VVI

Input signal voltage

Applied between pin 6 – 7
50% duty cycle, pulse width 1ms-7 ~ +7

V

Output current

Pulse width 3µs

VisoIsolation voltage

TC

Case temperature

Topr

Operating temperature

IOHP
IOLP

Parameter

Conditions

-24A

24A

Sine wave voltage 60Hz, for 1min. , R.H.<60%4000Vrms

Surface temperature

100°C

No condensation allowable-25 ~ +70°C

Tstg

Storage temperature

No condensation allowable-40 ~ +100 (*1)

°C

IFO

Fault output current

Applied pin 28

20mA

VR30

Input voltage to pin 30

Applied pin 30

60

VIdrive

Gate drive current

Gate average current

210 (*2)mA(*1) Differs from H/C condition(*2) Refer to Idrive-Ta CHARACTERISTICS.

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta=25°C, VD=15V, RG=1 ohm, CL=1.6uF, f=3kHz )SymbolParameter

Conditions

Limits
Typ15

Max
15.8

VD

Supply voltage

Recommended range

Min
14.2

VIN

Pull-up voltage on input side

Recommended range

4.75

55.25

UnitVV

IIH

Input signal current

Recommended range

101216mAｆ

Switching frequency

Recommended range--10kHz

RG

Gate resistance

Recommended range

0.33--ohm

IIH

Input signal current-12-mA

VIN = 5VHCMOS drive

Vcc

Gate positive supply voltage

-

15.2

16.5

17.5

V

VEE

Gate negative supply voltage--6-8-11.5

Vη

Gate supply efficiency

6072-%
V

Load current = 210mA
η= (Vcc+lVEE l) x 0.21 / (15 x ID) x 100

VOH“H” output voltage

10k ohm connected between pin 23-20

1415.3

16.5

VOL“L” output voltage

10k ohm connected between pin 23-20-5.5-7-11VtPLH“L-H” propagation time

IIH = 12mA

0.3

-

1µs

tr

“L-H” rise time

IIH = 12mA

-0.6

1.2µs

tPHL

“H-L” propagation time

IIH = 12mA

0.3

-

1µs

tf

“H-L” fall time

IIH = 12mA

-0.3

1.2µs

ttimerTimer

Between start and cancel (under input sign “OFF”)

1-2msIFO

Applied pin 28, R = 4.7k ohm-5-mA

Pin 30 : 15V and more,

-

3.5-

µs

ttrip2

Fault output current
Controlled time detect short circuit
1Controlled time detect short circuit
2 (*3)Pin 30 : 15V and more, pin 29-21,22 : 10pF
(connective capacitance)-

3.9-µsVSC

SC detect voltage

Collector voltage of IGBT

15--

V

ttrip1

pin 29 : open(*3) Length of wiring of condenser controlled time detect short-circuit is within 5cm from pin 21,22 and 29 coming and going.

2HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULESPERFORMANCE CURVES

24Ta=25℃
DC Load22201818VCC

1616

VD=14.2V

141412121088664204060

1.2

0.6

tPHL

0.4
0.2
0.00204060

80

1.6

1.2
1.0
0.8
tPLH
0.6
tPHL

0.4
0.2
0.0
3.5

4.5

5.0

5.5

6.0

ttrip-Ctrip CHARACTERISTICS（TYPICAL）

9
VD=15V
RG=1ΩΩ
Load:C=1.6uF

VD=15V
Ta=25℃

CONTROLLED TIME DETECT(μs)
SHORT CIRCUIT ttrip(μs)

8ttrip2(Ctrip=10pF)

4.0
3.5ttrip1(Ctrip=0pF)

3.04.0INPUT SIGNAL VOLTAGE VI(V)ttrip-Ta CHARACTERISTICS（TYPICAL）

4.50.25

VD=15V
RG=1ΩΩ
Ta=25℃
Load:C=1.6uF

1.4

AMBIENT TEMPERATURE Ta(℃)

5.00.20tPLH、tPHL-VI CHARACTERISTICS（TYPICAL）

tPLH

5.50.15tPLH、tPHL-Ta CHARACTERISTICS（TYPICAL）

0.8

6.00.10AMBIENT TEMPERATURE Ta(℃)

1.0-200.05

LOAD CURRENT IO(A)（Pin：１９－２１、２２）

VD=15V
VIN=5VΩRG=1Ω
Ta=25℃
Load:C=1.6uF

1.4

VD=15V

VD=14.2V

0.0080(μs)
PROPAGATION DELAY TIME “L-H” tPLH(μS)(μs)
PROPAGATION DELAY TIME “H-L” tPHL(μS)

1.60

VD=15.8V

10|VEE|-20

CONTROLLED TIME DETECT(μs)
SHORT CIRCUIT ttrip1,ttrip2(μs)

VD=15V

VD=15.8V

VCC、|VEE|(V)20

VCC、|VEE|(V)24

VD=15V
RG=1Ω
ΩLoad：C=1.6uF
f=3KHz D.F.=50%22(μs)PROPAGATION DELAY TIME “L-H” tPLH(μs)(μs)
PROPAGATION DELAY TIME “H-L” tPHL(μs)

VCC,|VEE|-IO CHARACTERISTICS（TYPICAL）

VCC、|VEE|-Ta CHARACTERISTICS（TYPICAL）

2.52.076543211.501.0-200204060080255075100125

CONNECTIVE CAPACITANCE Ctrip(pF)(Pin：２９-２１)

AMBIENT TEMPERATURE Ta（℃）
3HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULES

ID-IO CHARACTERISTICS（TYPICAL）

VOH,|VOL|-Ta CHARACTERISTICS（TYPICAL）

0.622

INPUT CURRENT ID(A)

0.5“H” OUTPUT VOLTAGE VOH(V)“L” OUTPUT VOLTAGE |VOL|(V)VD=15V
Ta=25℃

0.40.30.20.100.00

18VOH

16141210|VOL|8640.05

0.100.150.20

0.25‐20020406080

LOAD CURRENT Io(A)(Pin：１９－２１、２２)

AMBIENT TEMPERATURE Ta(℃)ηη-Idrive
CHARACTERISTICS（TYPICAL）

VCC、|VEE|-VD CHARACTERISTICS（TYPICAL）

2080
VD=15V
Ta=25℃

70

VD=15V
RG=1Ω
Ω
Load：C=1.6uF

20

Io=0.1A
Ta=25℃
Ta=25℃

18

VCC

60

14

VCC、|VEE|(V)ηEFFICIENCY η（％）

1650

12104030|VEE|

8620410200.00

00.05

0.100.15

0.200.25

13GATE DRIVE CURRENT Idrive(A)161718

η-Vη D CHARACTERISTICS（TYPICAL）

750.2515V

Io=0.1A
Ta=25℃

700.20η
EFFICIENCY η（％）

GATE DRIVE CURRENT Idrive(A)15SUPPLY VOLTAGE VD(V)

Idrive-Ta CHARACTERISTICS（MAXIMUM RATING）
RG=1Ω
Ω
Load：C=1.6uF

1416.5V
0.15

0.10

656055500.05450.0002040608040100

13AMBIENT TEMPERATURE Ta（℃）

14151617SUPPLY VOLTAGE VD(V)418HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULES

DEFINITION OF CHARACTERISTICS(1)SWITCHING OPERATION(2)OPERATION OF SHORT CIRCUIT PROTECTION

VIVIVOtrtf

0V

VO 0V
-5V

90%
12.5V

ttrip1,2ttimer

0VtPLH10V

Pin 28 output

-5V

0V

tPHL

APPLICATION EXAMPLE

D1C30
123

VD

254
VLA552VIN

7
PC1HC04 etc.

+

22
21

6
Control signal +

20

4.7k

Error signal

RG

D2G

243

IGBT module

Dz2
C1

C2C

Dz1

Ctrip

Dz3~629
2719

D4Cs
or 25pin

26pin
PC1

R2

R1
D3

4.7k
VD=15V +/‐5%
VIN=5V +/‐5%
PC1 : TLP781 (TOSHIBA) etc.
Ctrip : Depend on RG
Cs : Depend on surge voltage
Dz1 : 30V, 0.5W~1W
Dz2 : 18V, Bidirectional
D1 : Fast recovery diode (trr : 200ns Max)
RP1H(SanKen) etc.
C1,C2 : 470uF, 35V(Low impedance)

This circuit must be close toCollector and Gate.

Collector
clamp circuit

26

2RC filter
~10us

10VG

28
4.7k

D2~4 : SBD VRM=60V, IFSM>60A class
R1 : 1 ohm, 1W class
R2 : 10ohm,1/4W classDz3~6 : Vpn < Total Vz < VCES of IGBT
Rough guide of total Vz is as follows
For VCES 1200V series  900~1000V
For VCES 1700V series  1300~1400V
It depends on Vpn, IC(max), RG, snubber circuit,
Inductance of power main circuit, and kindof main condenser.

PRECAUTION(1)Voltage compensate capacitors are expected to be located as close as possible to the Hybrid IC.

(2)

Minimize the area of closed circuit of gate circuit so as not to be affected by induction noise.

(3)

D1 requires approximately the same voltage of IGBT modules.

(4)

When recovery current flow in D1 , pin 30 is applied high voltage .
In that case , counterplan for protection which insert a zener diode between pin21 and 30 are necessary like above diagram.

(5)

When you make late speed of reverse bias at the time of short circuit protection operation,(6)

When the built in short-circuit protection circuit need not be used, please connect resistance of 4.7k ohm between pin 30 and 20.

(7)

When the collector clamp circuit operates repeatedly, it may be destroied for heat. That is why the confirmation of calorific value

please adjust and connect a capacitor between pin 21 and 27.
(D1 and Dz1 are not required.)is necessary for zener diode by actual inverter test.

5

HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULES

OPERATION OF PROTECTION CIRCUIT

ADJUSTMENT OF OUTPUT FALL TIME

(1)

In case the gate voltage is “H” and the collector voltage is high,(When the protection circuit is operating)this Hybrid IC will recognize the circuit as short circuit and immediately

In case you want to decrease the speed of reverse bias when the(2)reduce the gate voltage . Besides, put out a fault sign (“L”) which

protection circuit is operating, you can adjust that speed by connecting

inform that protection circuit is operating at the same time from pin 28 .

the capacitor (Cs) between pin 21 and 27.

The protection circuit reset and return to ordinary condition if input(Please refer to under figures. )signal is “L” when the predetermined time(1 ~ 2ms) passed.
(“L” period needs 15us or more )
(3)

INPUT
SIGNAL

When the output rises, the controlled time detect short circuit(Typ 3.5us) is set up so that on-time of IGBT can be secured properly.

t2t1

It is possible to adjust that time by connecting the capacitor (Ctrip)

90%

between pin 21,22 and 29.

50%

OPERATION FLOW ON DETECTING SHORT CIRCUIT
0%10%VoSTARTt1,t2 VS. Cs CHARACTERISTICS(TYPICAL)
45

FALL TIME ON ACTIVITY OF SHORTCIRCUIT PROTECTION t1,t2(us)DETECTION OFSHORT CIRCUITGATE SHUTDOWNTIMER STARTOUTPUT ALARM
1 ~ 2ms

END OF TIMER

NO

VDV=15V
D =1 5V
Ta=25degC
Ta=25 deg40353025t2201510t1500YESINPUT SIGNAL IS“OFF”

NOYES
CLEAR ALARM
ENABLE OUTPUT
Note : Output voltage with protection circuit operating is about-lVEEl + 2V.

610 0 2 00 300 400 50 0 6 00 70 0
CONNECTIVE CAPACITANCE Cs(pF)(PIN:27- 21)

8 00

HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULESCAPACITY FOR POWER SUPPLY ON INPUT SIDE
Gate charge characteristic of IGBTThis product has isolated DCDC converter built in for gate drive.
When you chose the power supply on input side,

VGE

please select the product that can supply the current capacity proven+15V

by next 3steps.

1st step : Calculation for gate average current

Gate chargeIdrive = (Q1＋lQ2l ) X f
Idrive : Gate average current
Q1: Gate charge at +15V (Read from data sheet of IGBT)
Q2: Gate charge at -7V (Read from data sheet of IGBT)
f: Switching frequency of IGBT

-7V
Q1

Q2

ID-IO CHARACTERISTICS（TYPICAL）
0.6

2nd step : Reading required current from performance curve

INPUT CURRENT ID(A)If the result of calculation for Idrive is 100mA
ID is about 270mA by right chart.
ID : Consumption current of DCDC converter in this HIC
3rd step : Securing the margin
Iout = ID x (1+ margin )Iout : Output current of input power supply
Margin : 0.4
If the result of ID is 270mA, please prepare the power supply
that has the following spec.
Output voltage : 15V
Output current : more than350mA

0.5

VD=15V
Ta=25℃

0.4
0.3
0.2
0.1
00.00

0.05

0.10

0.15

0.20

LOAD CURRENT Io(A)(Pin：１９－２１、２２)

TIMING CHART

Input signal
VI
Soft shut down

23,24pin output
VoVCE of IGBTVSC
(SC detection point)
Occurrence of short circuit

IC of IGBT

Mask time(ttrip)

t timer

28pin
Fault output

Protection operation
is cleared

70.25

HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULESFOR SAFETY USINGGreat detail and careful attention are given to the production activity of Hics, such as the development, the quality of production, andin it’s reliability.

However the reliability of Hics depends not only on their own factors but also in their condition of usage. When

handling Hics, please note the following cautions.

CAUTIONS

Packing

The materials used in packing Hics can only withstand normal external conditions.
When exposed to outside shocks, rain and certain environmental contaminators, the packing materials
will deteriorates. Please take care in handling.

CarryingStorage

1)

Don’t stack boxes too high. Avoid placing heavy materials on boxes.

2)

Boxes must be positioned correctly during transportation to avoid breakage.

3)

Don't throw or drop boxes.

4)

Keep boxes dry. Avoid rain or snow.

5)

Minimal vibration and shock during transportation is desirable.

When storing Hics, please observe the following notices or possible deterioration of their electricalcharacteristics, risk of solder ability, and external damage may occur.
1)

Devices must be stored where fluctuation of temperature and humidity is minimal, and must not
be exposed to direct sunlight. Store at the normal temperature of 5 to 30 degrees Celsius withhumidity at 40 to 60%.

2)

Extended storage

Avoid locations where corrosive gasses are generated or where much dust accumulates.

3)

Storage cases must be static proof.

4)

Avoid putting weight on boxes.

When extended storage is necessary, Hics must be kept non-processed. When using Hics whichhave been stored for more than one year or under severe conditions, be sure to check that the exterior
is free from flaw and other damages.

Maximum ratings

To prevent any electrical damages, use Hics within the maximum ratings. The temperature, current,voltage, etc. must not exceed these conditions.

Polarity

To protect Hics from destruction and deterioration due to wrong insertion, make sure of polarity ininserting leads into the board holes, conforming to the external view for the terminal arrangement.

8

HYBRID IC

VLA552-01R
DRIVER FOR IGBT MODULES

Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, butthere is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire orproperty damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention against any
malfunction or mishap.
Notes regarding these materials·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to thecustomer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging toISAHAYA or a third party.
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
here in.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA Electronics Corporation or anauthorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes, suchas apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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9Dec.2012