查询SRVSERIES供应商PCMCIAFlashMemory Card

捷多邦，专业PCB打样工厂，24小时加急出货SRV Series
SRAM Memory Card

256KB through 8MB

General DescriptionFeatures

The WEDC SRAM Series (SRV) memory cards
offer a high performance nonvolatile storage solution
for code and data storage, disk caching, and write
intensive mobile and embedded applications.

• High Performance SRAM memory Card

Packaged in PCMCIA type I or type II housing (typeII for cards with extended battery backup time and
8MB cards), the WEDC SRAM SRV series is basedon 1 or 4Mbit SRAM memories, providing densities
from 256 Kilobytes to 8 Megabytes.
The SRV series of SRAM memory cards is auniversal 3V/ 5V power supply and operates atspeeds as high as 150ns. The cards are based on
advanced CMOS technology providing very low
power and reliable data retention characteristics.
WEDC’s SRAM cards contain a rechargeable
lithium battery and recharge circuitry, eliminating theneed for replaceable batteries found in many SRAMcards.
WEDC’s standard cards are shipped with WEDC’sSRAM Logo. Cards are also available with blankhousings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Pleasecontact WEDC sales representative for further
information on Custom artwork.

• Universal 3.3 to 5 Volt Supply allows for wider
compatibility between systems.
• Fast Access times: 150ns @ 5V
250ns @ 3.3V
• x8/x16 PCMCIA standard interface• Low Power CMOS technology provides very low
power and reliable data retention characteristics- standby current < 100µA typical• Rechargeable Lithium battery with recharge circuitry- eliminates the need for replaceable batteries- standby current during recharge typically < 2mA- battery backup time
•7 months - type I card
•18 months - type II card
typical based on 4MB (lower densities willhave greater storage times)• Unlimited write cycles, no endurance issues• Optional Features:• 2KB EEPROM attribute memory containingCIS• Optional Hardware Write Protect switch• PC Card Standard Type I or Type II Form Factor

Block Diagram
4MB SRAM Card Shown[A1..A19]

addressbuffer[A20..A22]/CSHi+ + + + +
CE1#
CE2#
WE#
OE#
REG#A0

S1Write ProtSwitch
VS1

GNDNC/CS-A/RD/RD/WR/WR
CTRL

WP

VS2/CSLi

decoderandcontrol
logic

Vcc

/CS-A/RD/WR

SRAM
512K x 8

SRAM
512K x 8

SRAM
512K x 8

SRAM
512K x 8

SRAM
512K x 8

SRAM
512K x 8

SRAM
512K x 8

SRAM
512K x 8/CSHi[A1..A11]ATTRIBUTEMEMORYCTRL

I/O BUFFER

GND[DO..D7][DO..D7][D8..D15][D8..D15]
+

BVD1
BVD2

Vcc

Notes: 1. pull down resistor (min 100k)
Power Management
andBattery Control

to internal
power
supply+2. pull up resistor (min 10k)

PCMCIA Flash Memory Card
SRV SeriesPinout
Pin Signal name I/O
1
GND
2
DQ3I/O
3
DQ4I/O
4
DQ5I/O
5
DQ6I/O
6
DQ7I/O
7CE1#I
8A10I
9OE#I
10A11I
11A9I
12
A8I
13
A13I
14
A14I
15
WE#I
16 RDY/BSY# O
17Vcc
18
Vpp1
19
A16I
20
A15I
21
A12I
22
A7I
23
A6I
24
A5I
25
A4I
26
A3I
27
A2I
28
A1I
29
A0I
30
DQ0I/O
31
DQ1I/O
32
DQ2I/O
33
WPO
34
GND

Function
GroundData bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9Address bit 8Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16Address bit 15
Address bit 12Address bit 7Address bit 6Address bit 5Address bit 4Address bit 3Address bit 2Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
GroundActive

LOW
LOW

LOW
N.C.
N.C.

HIGH

Pin Signal name I/O
Function
Active35
GND
Ground36
CD1#O
Card Detect 1
LOW37
DQ11I/O
Data bit 1138
DQ12I/O
Data bit 1239
DQ13I/O
Data bit 1340
DQ14I/O
Data bit 1441
DQ15I
Data bit 1542
CE2#I
Card Enable 2LOW
43
VS1O
Voltage Sense 1
GND
44N.C.
45N.C.
46
A17I
Address bit 17 256KB(2)47
A18I
Address bit 18 512KB(2)48
A19I
Address bit 191MB(2)49
A20I
Address bit 202MB(2)50
A21I
Address bit 214MB(2)51
Vcc
Supply Voltage
52
Vpp2
Prog. Voltage
N.C.
53
A22
Address bit 22 8MB(2,4)
54
A23N.C.
55
A24N.C.
56
A25N.C.
57
VS2O
Voltage Sense 2N.C.
58N.C.
59
Wait#O Extended Bus Cycle Low
60
N.C.
61
REG#I
Attrib Mem SelectLow
62
BVD2
O Bat. Volt. Detect 263
BVD1O Bat. Volt. Detect 1(3)64
DQ8I/O
Data bit 865
DQ9I/O
Data bit 966
DQ10O
Data bit 1067
CD2#O
Card Detect 2
LOW68
GND
GroundNotes:
1. CD1# and CD2# are grounded internal to PC Card.
2. Shows density for which specified address bit is MSB. Higher order address bits are noconnects (ie 1MB A19 is MSB, A20 - A21 are NC).
3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor.
4. The A22 Address line for 8MB capacities is also used for 6MB cards.

PCMCIA Flash Memory Card
SRV SeriesMechanicalType I
Interconnect area
1.6mm ± 0.05
(0.063”)1.0mm ± 0.05
(0.039”)3.0mm MIN

10.0mm MIN(0.400”)Substrate area

1.0mm ± 0.05
(0.039”)54.0mm ± 0.10(2.126”)85.6mm ± 0.20(3.370”)

10.0mm MIN(0.400”)3.3mm ± T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area

Type II
1.6mm ± 0.050.063”

85.6mm ± 0.20
3.370”

1.0mm ±0.05
0.039’

3.0mm
MIN.

Substrate area

1.0mm ±0.05
0.039’

54.0mm ± 0.102.126”

10.0mm MIN
0.400”

Interconnect area

5.0mm ± T10.197”

PCMCIA Flash Memory Card
SRV Series
Card Signal Description
Symbol
A0 - A25

Type
INPUT

DQ0 - DQ15

INPUT/OUTPUT

C E1 #, C E2 #

INPUT

OE#

INPUT

W E#

INPUT

RDY/BSY #CD1 #, CD2 #OUTPUTOUTPUTWPOUTPUT

VPP1, VPP2N.C.

VCC
GND
REG #

INPUT

RST
WAIT #INPUTOUTPUT

BVD1, BVD2OUTPUT

VS1, VS2OUTPUT

RFU
N.C.

Name and Function
ADDRESS INPUTS: A0 through A25 enable direct addressing of up
to 64MB of memory on the card. Signal A0 is not used in word accessmode. A25 is the most significant bit. (address pins used are based oncard density,see pinout for highest used address pin)
DA TA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute thebi-directional databus. DQ0 - DQ7 constitute the lower (even) byte andDQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.
CARD ENA BLE 1 AND 2: CE1 # enables even byte accesses, C E2 #enables odd byte accesses. Multiplexing A0, C E1 # and C E2 # allows 8bit hosts to access all data on DQ0 - DQ7.
OUTPUT ENA BLE: A ctive low signal enabling read data from thememory card.
WRITE ENA BLE: A ctive low signal gating write data to the memory
card.
READY/BUSY OUTPUT: Not used for SRAM cards
CARD DETEC T 1 and 2: Provide card insertion detection. Thesesignals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WRITE PRO TEC T: Follows hardware Write Protect Switch. When
Switch is placed in on position, signal is pulled high (10K ohm). Whenswitch is off signal is pulled low.
PROGRAM/ERASE POW ER SUPPLY: Not used for SRAMcards.
CARD POW ER SUPPLY: 3.3V / 5.0V for all internal circuitry.
GROUND: for all internal circuitry.
ATTRIBUTE MEMORY SELEC T : only used with cards built withoptional attribute memory.
RESET: Not used for SRAM cards
WAIT: This signal is pulled high internally for compatibility. No waitstates are generated.
BA TTERY VOLTAG E D ETEC T: Provides status of Batteryvoltage.
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = Vol (data may no longer be valid, battery requiresextended recharge)
VOLTAG E SENSE: Notifies the host socket of the card's VCC
requirements. VS1is grounded and VS2 is open to indicate a 3.3V/5V
16 bit card, with a 5V key, has been inserted.
RESERV ED FOR FUTURE USE
NO INTERNA L CONNEC TION TO CARD: pin may be driven
or left floating

SRAM
FUNCTIONAL TRUTH TABLEREAD function
Function Mode
/CE2 /CE1
Standby Mode
H
H
Byte Access (8 bits)
H
L
H
L
Word Access (16 bits)L
L
Odd-Byte Only Access
L
H
WRITE function
Standby Mode
H
H
Byte Access (8 bits)
H
L
H
L

A0
X
L
H
X
X

/OE
X
L
L
L
L/WE
X
H
H
H
H

X
L
H

X
H
H

XL
L

Common Memory/REG D15-D8
D7-D0X
High-Z
High-Z
H
High-Z Even-ByteH
High-Z Odd-Byte
H Odd-Byte Even-Byte
H Odd-Byte High-ZX
HHX
X
X

X
Even-Byte
Odd-Byte

Attribute Memory/REG D15-D8
D7-D0X
High-Z
High-Z
L
High-Z Even-Byte
L
High-Z Not Valid
L Not Valid Even-Byte
L Not Valid
High-Z
X
LL

X
X
X

X
Even-Byte
XPCMCIA Flash Memory Card
SRV Series
Absolute Maximum Ratings (2)Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS

0°C to +60 °C-40°C to +85 °C
0°C to +60 °C-40°C to +85 °C-0.5V to +5.5V (1)-0.5V to +7.0V

DC Characteristics (1)Notes:(1) During transitions, inputs may undershoot to-2.0V or overshoot to VCC +2.0V for periods lessthan 20ns.
(2) Stress greater than those listed under“Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stressrating only and functional operation at these or
any other conditions greater than those indicatedin the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affectreliability.

CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = 5V ± 0.2V

SymParameter

Density

Notes

ICC

VCC Active Current

1ICCS

VCC Standby Current

64KB
128KB
256KB
512KB
1MBto8MB
All

2,4

ILI

Input Leakage Current

All

ILO

Output Leakage Current

VILMin(3)

TypMax

Units

Test Conditions

90909090
110180180180180190mA

VCC = 5.25V
tcycle = 150ns<110mA

5,6±20µA

All

6±20µA

VCC = 5.25V
Control Signals = VCCVCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS

Input Low Voltage

All

600.8

VVIH

Input High Voltage

All

63.85

VVOL

Output Low Voltage

All

6VCC+0.5
0.4V

IOL = 3.2mA

VOH

Output High Voltage

All

6VCC

V

IOH = -2.0mA< 0.1

VCC0.4

Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fullydischarged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due tointernal pull-up resistors.

Battery Characteristics
Parameter
Battery Life

BatteryBackup TimeDensity
All
256KB
512KB, 1MB
2MB
4MB
6MB
8MBNotes(1)(2)

SRV11-14
Type Imin 1032221212-Notes:
1. Battery Life refers to functional lifetime of battery.

SRV01-04
Type I Type II Units
min 10years
2460
1845
1230
months177(typical)
717
12Conditions
Normal operation, T=25C
T=25C
Battery backup time is acalculated value and is notguaranteed. This should not be
used to schedule battery
recharging.

PCMCIA Flash Memory Card
SRV Series
AC Characteristics
Read Timing Parameters

5.0V

3.3V

SYM(PCMCIA)tRCParameter

MinMaxMinMax

Unit

Read Cycle Time

150ta(A)

Address Access Time

150250nsta(CE)

Card Enable Access Time

150250nsta(OE)

Output Enable Access Time75125nstsu(A)Address Setup Time

2030nstsu(CE)Card Enable Setup Time

00nsth(A)Address Hold Time

2020nsth(CE)

Card Enable Hold Time

2020nstv(A)Output Hold from Address Change

00nstdis(CE)Output Disable Time from CE#

75

100nstdis(OE)

Output Disable Time from OE#

75100nstdis(CE)Output Enable Time from CE#

55nstdis(CE)Output Enable Time from OE#

55ns250ns

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.

Read Timing Diagram

tc(R)
th(A)

ta(A)

A[25::0], /REGtv(A)ta(CE)
tsu(CE)/CE1, /CE2

NOTE 1NOTE 1tsu(A)th(CE)ta(OE)

tdis(CE)/OE
tdis(OE)
ten(OE)
D[15::0]

Note: Signal may be high or low in this area.

DATA VALIDPCMCIA Flash Memory Card
SRV Series
Write Timing Parameters

5.0V

3.3V

SYM
(PCMCIA)tCW

ParameterMinMaxMinMax

Unit

Write Cycle Time

150250nstw(WE)

Write Pulse Width80150

nstsu(A)

Address Setup Time

2030nstsu(A-WEH)

Address Setup Time for WE#

100180nstsu(CE-WEH)

Card Enable Setup Time for WE#

100

180

nstsu(D-WEH)

Data Setup Time for WE#

5080nsth(D)Data Hold Time

2030nstrec(WE)

Write Recover Time

2030nstdis(WE)

Output Disable Time from WE#

75

100

nstdis(OE)

Output Disable Time from OE#

75100nsten(WE)

Output Enable Time from WE#

55nstdis(OE)

Output Enable Time from OE#

55nstsu(OE-WE)

Output Enable Setup from WE#

1010nsth(OE-WE)

Output Enable Hold from WE#

1010nstsu(CE)Card Enable Setup Time from OE#

00nsth(CE)

Card Enable Hold Time

2020

ns

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.

Write Timing Diagram
tc (W )

A [ 2 5 :: 0 ], / R E G

ts u ( A - W E H )tre c (W E )ts u ( C E - W E H )th (C E )ts u (C E )/C E 1 , /C E 2

NOTE 1NO TE 1/O E
tw (W E )ts u ( A )th (O E -W E )/W Eth ( D )ts u (O E -W E )D [ 1 5 : :0 ] ( D in )ts u (D -W E H )NO TE 2

D A T A IN P U T
t d is ( W E )t d is ( O E )te n (O E )te n (W E )D [ 1 5 ::0 ] ( D o u t )NO TE 2

Notes:
1. Signal may be high or low in this area.
2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the hostPCMCIA Flash Memory Card
SRV Series

PRODUCT MARKINGWED 8P512SRV0100C15 C995 9915
EDI

Date code
Lot code / trace number
Part numberCompany Name

Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During ourtransition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.

PART NUMBERING
8 P 512 SRV01 00 C 15

Card access time
1525150ns
250ns

Temperature range
C Commercial 0°C to +70°CI Industrial-40°C to +85°C

Packaging option
00

Standard, type 1

Card family and version- See Card Family and Version Info. for details (next page)

Card capacity
512512KB

PC cardPR

Standard PCMCIA
Ruggedized PCMCIA

Card technology
78FLASHSRAM

PCMCIA Flash Memory Card
SRV Series
Ordering Information

8P XXX SRV YY SS T ZZ
where
XXX:

256*
512*
001
002
004
006
008*

256KB
512KB
1MB
2MB
4MB
6MB
8MB
*= Capacities available only in SRV01-SRV04

YY:010203
04

no attribute memory, no Write Protect Switch
with attribute memory, no Write Protect Switch
with Write Protect Switch, no attribute memory
with attribute memory, with Write Protect Switch

11121314

Extended Battery Backup Time, no attribute memory, no Write Protect Switch
Extended Battery Backup Time, with attribute memory, no Write Protect Switch
Extended Battery Backup Time, with Write Protect Switch, no attribute memory
Extended Battery Backup Time, with attribute memory, with Write Protect Switch

SS:00
0102030405

WEDC SRAM Logo Type I
Blank Housing,Type I
Blank Housing,Type I Recessed
WEDC SRAM Logo, Type II(8MB and extended battery backup time)
Blank Housing,Type II(8MB and extended battery backup time)
Blank Housing,Type II Recessed (8MB and extended battery backup time)T:

CI

Commercial
Industrial

ZZ:

15150ns

PCMCIA Flash Memory Card
SRV Series

Date of revision
27-Sep-99
2-Jun-00

REVISION HISTORY
VersionDescription
0
Initial release1
Added Page 8, Added SRV11-14 to page9, Changed Page Header

Filename: SRV Dsht Rev1.ppt

White Electronic Designs Corporation
One Research Drive, Westborough, MA 01581, USA
tel:(508) 366 5151

fax:(508) 836 4850

www.whiteedc.com