IGBT Gate Drive Unit
VLA559-01R/-02RAug.2013

ISAHAYA ELECTRONICS CORPORATION

http://www.idc‐com.co.jp

1

IGBT Gate Drive Unit VLA559
VLA559‐01R/‐02R
01R/ 02R
Block DiagramFeature>Directly mountable on the Prime PACK
>Built in the isolated DC‐DC converter for gate drive>Output peak current is +/‐24A(max)>Built in short circuit protection with soft shut down
>Built in collector clamp circuit>Electrical isolation voltage is 4000Vrms(for 1 minute)>CMOS compatible input interface

REGU‐LATORVD+GND
C1DETECTCollectorclampLATCH

IN1+

1201k

G1

AMP

1200

TIMER

IN1‐

Recommended IGBT Modules
Fuji IGBT module of Prime PACK+

DC‐ACCONVERTER

C2E1

SHUT DOWN
F.O.

FO1
GND

REGU‐
LATOR

VCES:1200V series Î VLA559
VLA559‐01R
01R
VCES:1700V series Î VLA559‐02R+

DC‐AC
CONVERTER+

DETECT
LATCH

IN2+
IN2‐
FO2
GND

1201k

120

ISAHAYA ELECTRONICS CORPORATION

Collector
clamp

G2

AMP
TIMER
SHUT DOWN
F.O.

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E22Maximum ratings(unless otherwise noted, Ta=25C)

SymbolParameter

Conditions

Ratings

Unit

VD

Supply voltage

DC‐1 ~ 16.5

VVI

Input signal voltage

Applied between IN+ and IN‐
50% Duty cycle , pulse width 1ms‐7 ~ +7V

Output peak current

Pulse width 3us‐24A24A

VisoIsolation voltage

Sine wave voltage 60Hz, for 1min

4000

Vrms

Topr

Operating temperature

No condensation allowable‐25 ~ 85

deg CTstg

Storage temperature

No condensation allowable‐40 ~ 85

deg CIdrive

Gate drive current

Gate average current (Per one circuit)

210mA

VDC_Link

Main circuit voltage

The voltage between P and N

IOHP
IOLP860 (‐01R)

V1200 (‐02R)( unless otherwise noted, Ta=25 degC, VD=15V, f=3kHz)

Electrical characteristics
SymbolParameterConditions

VD

Supply voltage

VINLimitsUnitMinTypMax

Recommended range

14.2

1515.8V

Pull‐up voltage on input side

Recommended range ( for input signal )

4.75

55.25

VIIH

“H” input signal current

Recommended range

101216mAf

Switching frequency

Recommended range‐‐5kHzRG

Gate resistance

Recommended range

0.33

‐‐ohm

VOH

Plus bias output voltage‐

1415.3

16.5

VVOL

Minus bias output voltage‐‐5 5‐5.5‐7‐11V

tPLH“L‐H” propagation time

IIH = 12mA

0.3‐

1us

tPHL

“H‐L” propagation time

IIH = 12mA

0.3‐

1us

Clamp zener voltage

Total zener voltage in collector clamp circuitat Iz = 1mA , Tj=25 deg C‐

970 (‐01R)‐‐

1400(‐02R)‐

SC detect voltage‐

15‐‐Vz(*1)
VSCVV*1 : It depends on the condition of use, but actual clamp voltage of collector rises by 300V from 200V to Vz.

ISAHAYA ELECTRONICS CORPORATION

http://www.idc‐com.co.jp

3Inner circuit
HIC1,2
PC1,2
D1,2
D3,4,7,8
D5,6
DZ1,2
DZ3,4
C1,2,3,4
RG
R1,2,3,4
R5,7
R6,8CN1

VLA552ISAHAYATLP781TOSHIBA
RP1H
SanKenSBD VRM=60V, IFSM >60A class
SBD VRM
VRM=60V,
60V, IFSM >30A
30A class
Vz=30V 1W class
Vz=18V Bidirectional,
470uF,35V
Low impedanceGate Resistor
4.7kohm,250mW
1W class
1W class3662‐6002LC
3M

DZ5~11 / 12~18 Total zener voltage
970V ( at Iz=1mA ) Î ‐01R
1400V ( at Iz=1mA ) Î ‐02R

D11Collector
clamp circuit

26223CN11VD

2GND

3IN2+

4IN1+

5IN2‐

6IN1‐

7FO28FO19GND

10GND

24G1

RG1~43

DZ3C2E1254C1C1
DZ5
DZ6
DZ7
DZ8
DZ9
DZ10
DZ11

D3

HIC1206Dz1
C221722C729R6PC128R1
1G130Collector
clamp circuit

26223PC1R5

D5
D7R2
D2

Note1) Gate Resistor is not installed at the time of shipment.
Please solder the chosen resistor.
2) C7,8 is not installed at the time of shipment.
Please solder the chosen condenser if needed.
(50V,ceramic)

C130

PC224

G2

RG5~83

DZ4E225

4C3C2E1

D4HIC22067

DZ12
DZ13
DZ14
DZ15
DZ16
DZ17
DZ18

Dz2C42122C829

PC228

R3R4R8

D6R7

D8G2G

ISAHAYA ELECTRONICS CORPORATION

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4Application example

D1
130Collector
clamp circuit

26223

1VD

2GND

3

IN2+

4IN1+

Input Signal2

5

IN2‐

Input Signal1

6IN1‐

78FO29GND

10GND

VIN
5V

5VFault output2

CN1HC04 etc.

4.7k

RG

24
3

DZ3254C1

D3

HIC1
206Dz1C221722C729FO1PC128

R1R2
D2RC filterfil~10us

1Fault output1RC filter~10us

30Collectorclamp circuit

26

24.7k

23

PC1

PC2

RG

24

DZ4

325

4C3

D4HIC22067Dz2C421

2MBI1000V
VXB‐170E‐50 etc.

VD
15V

22C829PC2VLA559

ISAHAYA ELECTRONICS CORPORATION

28R3R4

http://www.idc‐com.co.jp5Note about collector clamp circuit (1)The following chart is the collector voltage wave form of IGBT at high current turn off.
This drive unit has collector clamp circuit built in.
As for this clamp circuit, there is effectiveness to control the surge voltage on collector at high current turn off,
but the surge voltage may go over the maximum rating of collector voltage depending on the condition of use.
Therefore please confirm it in the actual machine evaluation.
Finally each parameter must be the following relation.
relation Please keep this condition.
condition

VDC_Link < Vosc_peak < Vz < Voff_surge
200V ~ 300V (rough guide )It depends on the condition of use

Collector voltage wave form
at high current turn off

Gate voltage
wave form

Voff_surge

Vz : Total zener voltage of collector clamp circuit

Vz

Vosc_peak

VDC_Link

Work of collector clamp circuit

The next countermeasures are effective to suppress the rise and oscillationof the collector voltage.
P(1) Reducing the value of L1,L2 and L3(2) Increasing the value of C2(3) Increasing the resistance of gate resistor(4) Limiting maximum collector current(5) Reducing the VDC_Link

L2L3

L1C1
Main smoothing
capacitorNISAHAYA ELECTRONICS CORPORATION

C2

L1:Stray inductance in main smoothingcapacitor
L2:Stray inductance of main wiring
L3:Stray inductance of snubber circuit
C1:Main smoothing capacitor
C2:Snubber capacitor

Snubber capacitor

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6Note about collector clamp circuit (2)The total zener voltage in the collector clamp circuit has the tolerance and fluctuation by temperaturesuch as the following chart.
Please keep the main circuit so that the DC_Link voltage does not exceed this zener voltage.

Total zener voltage characteristic of VLA559‐01RTotal zener voltage characteristic of VLA559‐02R

1200

1800

1150

1700
Max

1100
1050

1500
Vz (V)Vz (V)

Max

1600

1000
950

1400
1300

900

TypTyp

1200

850

Min1100
Min

800

1000
‐300306090120

150‐30030Tj (deg C)

6090120150

Tj (deg C)

N t aboutNoteb t collector
ll t clamplcircuit
i it (3)When the collector clamp circuit operates repeatedly, it may be destroyed for heat.
Therefore please keep it to work non‐consecutively.

ISAHAYA ELECTRONICS CORPORATION

http://www.idc‐com.co.jp

7Capacity for power supply on input sideGGatechargehcharacteristichi i off IGBTThis product has isolated DCDC converter built in for gate drive.
When you chose the power supply on input side,please select the product that can supply the current capacity provenby next 3steps.
3steps

VGE
15V

1st step : Calculation for gate average current
Idrive = (Q1＋lQ2l ) x f
Idrive : Gate average current
Q1 : Gate charge at +15V (Read from data sheet of IGBT)
Q2 : Gate charge at ‐7V (Read from data sheet of IGBT)
f: Switching frequency of IGBT

2nd step : Reading required current from performance curve
If the result of calculation for Idrive is 100mA
ID is about 270mA by performance curve.
ID : Consumption current of DCDC converter in this unit ( per 1 circuit )Gate charge
‐7V
7V
Q2

Q1

ID – Idrive
d i performance
fcurve (Typical(i l)

3rd step : Securing the margin
Iout = ID x n x (1+ margin )Iout : Output current of input power supply
n: element number ( in this case n=2 , this unit has 2 elements )Margin : 0.4
If the result of ID is 270mA, please prepare the power supply
that has the following spec.
Output voltage : 15V
Output current : more than 756mA

ISAHAYA ELECTRONICS CORPORATIONThis is the data of 1 element

Gate average current Idrive(A)

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8About mounting gate resister
It is possible to install up to 4 resistors for 1 element in mount area of gate resistor.
And there are some variations by combining resistor with SBD.
There are some examples in the following chart, please refer to it and set the gate resistor.

Mount areaof gate resister

Drivecircuit

Example 3E
Examplel 2

E
Examplel 1
Ra

DrivecircuitRa

RG(on)) ÎRaRG(ÎRRG(off) ÎRaRb
RG(on) ÎRa//Rb
RG(off) ÎRa//Rb

Example 4

Example 5

Drivecircuit

Ra

Rb
RG(on)( ) ÎRa//Rb//
RG(off) ÎRb

Drivecircuit

Drivecircuit

Ra

Rb

Rc Rd
RG(on) Î(Ra+Rb)//(Rc+Rd)
RG(off) Î(Ra+Rb)//(Rc+Rd)

Example 6Ra
Rb

RG(on) ÎRaRG(off) ÎRa//Rb

ISAHAYA ELECTRONICS CORPORATION

Drivecircuit

Ra
Rb

RG(on) ÎRaRG(off) ÎRb

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9Details of connector
CN1 : 3662‐6002LC (3M)
Pin N.o.
SignalPin N.o.
Signal
1VD
7FO22GND
8FO1
3IN2+
9GND
4IN1+
10GND
5IN2
IN2‐
6IN1‐

We recommend following parts or equivalent product for flat cable
Socket connector

Strain relief

Maker

7910‐6500

3448‐7910

3M

ISAHAYA ELECTRONICS CORPORATION

http://www.idc‐com.co.jp

10

E2
Screw hole

G2
Screw hole

Outline & SizeUniti : mmNote
1)The screw hole fits to the screw hole position of2MBI1000VXB‐170E‐50.
2) There is not Gate Resistors at the initial state.
stateSo please solder the chosen resistor.

Hybrid IC

C2E1 G1
Screw hole Screw hole

C1Screw hole

: Gate resistor mount part (Initial is open)

Creepage
88.00 mm

< In Hybrid IC >Input side ‐ Output side Î 8.0 mm

8.0 mm3mmax

1.6< On mother board >Clearance
Input side ‐ Output side Î 8.08 0 mm

43max

Clearance & Crepage

This is just a Image photo
ISAHAYA ELECTRONICS CORPORATION

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Hong Kong
ISAHAYA ELECTRONICS SALESASIA LTD.

U.S.A./ San Diego
U.S.A. OfficeJAPAN / Osaka
Osaka Branch OfficeJAPAN / Nagasaki
Head Office & Laboratory

Singapore
ISAHAYA ELECTRONICS SALESSINGAPORE PTE., LTD.

Head Office
6‐41 Tsukuba, Isahaya, Nagasaki, 854‐0065, JapanTEL (0957)26(0957)26‐3592
3592 FAX (0957)26(0957)26‐5257
5257
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e‐mail : shinobu.takeoi@iesa.com.hk (Ms. Shinobu Takeoi)

ISAHAYA ELECTRONICS CORPORATION

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12Keep safety first in your circuit designs!
∙ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, butthere is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire orproperty damage.
damage Remember to give due consideration to safety when making your circuit designs,
designs with appropriate measures
such as (1) placement of substitutive, auxiliary circuits, (2) use of non‐farmable material or (3) prevention against any
malfunction or mishap.

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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons.
reasons It is therefore recommended that customers contact ISAHAYA Electronics
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ivehicular,
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gof Japan
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13