8L㔘ᒌ㓗໩∸々ྙ㞹ᴗ࡞ࡻࡾ஦ṹ㝭ທ㉫ࢅฺ⏕ࡊࡒኯ㝟කỀᏰධฦよࡡᵋ⠇
Photoelectrochemical Water Splitting Based on Two Photon Process with Si/MetalOxide Complex Electrode௥⾪◂✪⩽㸯ኬ㜨ኬᏕ ᇱ♇ᕝᏕ◂✪⛁ ◂✪ဤ  ኬ➁ ᡧெGraduate School of Engineering Science, Osaka University,
1-3 Machikaneyama, Toyonaka, Osaka 560-8531 Japan
Researcher,Toshihito OHTAKE 㧏ຝ⋙࡚఩ࢤࢪࢹ࡝ኯ㝟ක࢙ࢾ࣭ࣜ࢟ንᥦࢸࣁ࢕ࢪ㛜Ⓠࢅ┘ᣞࡊ࡙ᵕࠍ࡝モࡲ࠿⾔ࢂࡿ࡙࠷ࡾࠊ≁࡞༖ᑙమ/㞹よᾦ⏲㟻ࢅฺ⏕ࡊࡒኯ㝟කỀฦよࡢἸ┘ࡈࡿ࡙࠷ࡾࠊࡆࡿࡢᏭ౮࡚ኯ㝟㞹ờࡡࡻ࠹࡞㞹Ὦ཭㞗ࡡᚪさ࠿࡝࠷࡝࡜ࡡฺⅤ࠿࠵ࡾࡒࡴ࡚࠵ࡾࠊ᭩㎾ࡡᠺᯕ࡛ࡊ࡙ࠉ⚶ࡒࡔࡢ n- Si 㞹ᴗ࡞࠽࠷࡙⾪㟻ࡡ࢓ࣜ࢞ࣜ໩࡛㔘ᒌ᚜⢇Ꮔಞ㣥࠿ኯ㝟කỀฦよཬᚺ࡞ᑊࡊ࡙Ꮽᏽ࡞഼ࡀຝ⋙Ⓩ࡚࠵ࡾࡆ࡛ࢅ᪺ࡼ࠾࡞ࡊ࡙ࡀࡒࠊࡆࡡ▩ぜࢅࡨࡱ࠻࡙ࠉ༟⤎ᬏ n-Si ⾪㟻୕࡞࣒ࢲࣜ໩࡛Ⓣ㔘ࢻࢿ᚜⢇Ꮔࡡಞ㣥ࠉཀྵࡦ㔘ᒌ㓗໩∸࡛ࡊ࡙㓗໩ࢰࣤࢡࢪࢷࣤࢅฺ⏕ࡌࡾࡆ࡛࡚々ྙ㞹ᴗࡡషᠺࢅモࡲࡒࠊ

Of various approaches to high-efficiency and low-cost solar energy conversion, direct solar tochemical conversion, such as solar water splitting, by use of a semiconductor/electrolyte junction,
has been attracting growing attention. Merits of this approach lie in that inexpensive thin-film
semiconductor materials can easily be used, and no current collection is necessary to be used, incontrast to thin-film solar cells. Recently, we have found that a combined surface modification ofalkylation and metal nano-dot coating is effective to get efficient and stable n-Si electrodes. Based on
this result, we have been studying solar water splitting with a composite electrode, composed of thesurface methylated and Pt nano-dotted n-Si single crystal and a tungsten trioxide (WO3) particulate
thin film.
㸦. ◂ ✪┘ Ⓩ ࢙ࢾ࣭ࣜ࢟♣ఌࡡ฽ᮮࡡ୯ࠉ⎌ሾ࡛࢙ࢾ⇖ᩩ㞹ờࡢ໩▴⇖ᩩࢅ⏕࡝࠷⎌ሾỗ᯹ࡡ࡝࣭࡛ࣜ࢟ࡡㄢ࿰࠿ኬࡀ࡝ၡ㢗࡛࡝ࡖ࡙࠷ࡾࠊ࡛ࡊฺ࡙⏕ࡌࡾࠊࡊ࠾ࡊᚉᮮࡡỀ⣪࡛㓗⣪ࡐࡡࡒࡴᆀ⌣Ὼᬦ໩ࢅᘤࡀ㉫ࡆࡌ⅛㓗࢝ࢪ

ࡡ⿿㏸Ἢ࡚ࡢ໩▴⇖ᩩࡡ౐⏕࡞ࡻࡾࡒࡴ࡞ࠉࢅᤴฝࡊ࡝࠷ࢠ࣭࢙ࣛࣤࢾ࣭ࣜ࢟ࡡ㛜Ⓠ࠿⇖ᩩ㞹ờ࠿┷࡞ࢠ࣭ࣛࣤ࡝࢙ࢾ࣭࡛ࣜ࢟ゕ㔔さ࡛࡝ࡖ࡙࠷ࡾࠊࡐࡡ࢙ࢾ࣭ࣜ࢟ࡡ㛜Ⓠ࠹ࡆ࡛࠿࡚ࡀ࡝࠷ࠊࡐࡆ࡚ࠉ໩▴⇖ᩩࢅ౐࡞ࡢኯ㝟࢙ࢾ࣭ࣜ࢟ࡷࠉ㢴ງ࢙ࢾ࣭ࣜ࢟࡝⏕ࡎࡍ࡞Ề⣪࣬㓗⣪ࢅ⿿㏸ࡌࡾᢇ⾙࠿ᚪさ࡜ࡡ࢙ࢾฺ࣭ࣜ࢟⏕࠿モࡲࡼࡿ࡙࠷ࡾࠊࡐ࡛ࡈࡿࠉ↋ᑸⶮ࡞Ꮛᅹࡌࡾኯ㝟ක࡛Ề࠾ࡼࠉ

ࡡ୯࡚ࠉ⅛㓗࢝ࢪࢅᤴฝࡊ࡝࠷ࢠ࣭࢙ࣛࣤỀࡡኯ㝟කฦよ࡞ࡻࡾỀ⣪࡛㓗⣪⿿㏸࠿᭿

ࢾ࣭࡛ࣜ࢟ࡊ࡙⇖ᩩ㞹ờ࠿Ἰ┘ࡈࡿ࡙࠷ࡾࠊᙽࡈࡿ࡙࠷ࡾࠊኯ㝟කࡢ⭶ኬ࡝࢙ࢾ࣭ࣜ࢟࠷ࣈࣞࢬࢪ࡚ࠉ௥ࢂࡽ࡞Ề⣪࡛㓗⣪ࢅ⇖ᩩ-1-ᅒ䠃㻃 ஦ṹ㝭ທ㉫ᶭᵋ㻋㼝㻐㼖㼆㼋㼌㼐㼈㻌䜘ฺ⏕䛝䛥々ྙ㞹ᴗ㻃ᅒ 㻕㻃 ኯ㝟කỀฦよ䜘┘ᣞ䛝䛥ක㞹Ẵ໩Ꮥ䝦䝋䝯ᅒ㻃ࢅᆀ⌣࡞↯ᑏࡊ࡙࠷ࡾ࠿ࠉ⚶ࡒࡔࡢࡐࡡ࢙㸧㸣  ◂ ✪ ⤊㐛ࢾ࣭ࣜ࢟ࡡ࡮࡛ࢆ࡜ࢅ༎ฦ࡞ฺ⏕ࡊ࡙࠷࡝ Q8 L ⾪㟻 ࡡ࢓ ࣜ ࢞ࣜ ⤂❻ ໩ ࡛ 5W࠷ࠊࡐࡆ࡚ࠉỀ⣪ࢅኯ㝟ක࢙ࢾ࣭ࣜ࢟ࢅฺಞ㣥⏕ࡌࡾࡆ࡛࡚ࠉỀ࠾ࡼຝ⋙Ⰳࡂ⿿㏸ࡌࡾᢇ

༟⤎ᬏ Q8L  ࢅ 7(& ὑὯᚃࠉ-+ ࠽⾙࠿᭿ᙽࡈࡿࡾࠊࡻࡦ 3-+ ࡞ࡻࡾ࢙ࢴࢲࣤࢡ࡚⾪㟻ࢅỀ ࡆࡡᐁ⌟ࡡࡒࡴ࡞ࡢࠉ༖ᑙమࢅ㞹ᴗ࡛ࡊ⣪⤂❻໩ࡊࡒࠊḗ࡞ VFW5(O5K(O ⁈ᾦ୯࡚࡙⏕࠷࡙ỀࢅỀ⣪࡛㓗⣪࡞ฦよࡊࠉක࢙ࢾක↯ ᑏ ࡞ࡻ ࡽ ሲ⣪ ⤂❻ ໩ ࡊࠉ ⤾ ࠷࡙ 㣤 ࿰࣭ࣜ࢟ࢅ├᥃Ề⣪ࡷ㓗⣪ࡡ໩Ꮥ࢙ࢾ࣭ࣜ࢟

(-1L*W4 ⁈ᾦ୯࡞ᾈࡊ࡙࣒ࢲࣜ⤂❻໩ࡊ࡞ንᥦࡌࡾᢇ⾙ࡡ㛜Ⓠ࠿ᚪさ࡚࠵ࡾࠊᮇ◂ࡒࠊࡐࡡᚃ P205W(O21L(O4 ୯✪࡚ࡢࠉ⾪㟻ಞ㣥ࡊࡒ༖ᑙమࢨࣛࢤࣤ 8L

࡚ 5W ࢻࢿ⢇Ꮔࢅ P(HP 㞹ᯊࡊࠉ5W ࢻࢿ⾪㟻୕࡞㓗⣪Ⓠ⏍࡞Ὡᛮࡡ࠵ࡾ༖ᑙమ㔘ᒌ⢇Ꮔᢰᣚ࣒࣬ࢲࣜ໩ Q8L 㞹ᴗࢅᚋࡒࠊࡆࡡ㓗໩∸ࢅ⤄ࡲྙࢂࡎࡾࡆ࡛࡚ࠉ々ྙ㞹ᴗ࡞㞹ᴗ୕࡞ )( ࣏ࢡࢾࢹࣞࣤࢪࣂࢴࢰἪࢅ⏕࠷ࡻࡾኯ㝟කỀฦよࢅ┘ᵾ࡛ࡊ࡙࠷ࡾࠊࡆࡡ

࡙ .94 LQILXPWLQR]LIH ࢅᠺ⭯ 㹳々ྙ㞹ᴗࢅᵋ⠇ࡌࡾࡆ࡛࡞ࡻࡽࠉኯ㝟ක୯QP ࡊࠉ᭩ᚃ࡞㔘ᒌ㓗໩∸ࡡ᚜⢇Ꮔᠩ⃦ᾦࢅࡡ▯ἴ㛏කࡢ࣠࢕ࢺࣁࣤࢺ࢟ࣔࢴࣈ༖ᑙమ

IRHWRUGOFIH Ἢ࡚ሧᕱࡊ࡙ࠉΥ࡚ K ⇍࡚࠵ࡾ㔘ᒌ㓗໩∸ࢅທ㉫ࡊ࡙ࠉ㛏ἴ㛏කࡢ
8L ࢅທ㉫ࡌࡾࡆ࡛࠿࡚ࡀࡾࠊࡆࡿࡢ஦ṹ㝭ທ㉫㸝̲VHKHPH㸞࡛࿣ࡣࡿࠉ᳔∸࠿⾔ࡖ࡙࠷ࡾ࣒࢜ࢼࢫ࣑࡚࠵ࡾ㸝ᅒ 㸞ࠊࡆࡡ々ྙ㞹ᴗࢅష⏕㞹ᴗ࡛ࡊ࡙⏕࠷࡙ࠉୌ᪁࡚ 5W ࢅᑊᴗ࡛ࡊฺ࡙⏕ࡊ࡙ࠉ஦ࡗࡡ㞹ᴗ࡚㞹Ẵ໩Ꮥῼᏽ⣌ࢅᵋ⠇ࡌࡾࡆ࡛࡞ࡻࡽࠉ々ྙ㞹ᴗ࠾ࡼࡢ㓗⣪Ⓠ⏍ࠉᑊᴗ࠾ࡼࡢỀࡡ㑇ඔ࡞ࡻࡾỀ⣪Ⓠ⏍࠿ྊ⬗࡛࡝ࡾ㸝ᅒ 㸞ࠊᮇ◂✪࡚ࡢࠉࡆࡿ࡞ࡻࡽኯ㝟ක࡞ࡻࡾỀᏰධฦよࢅ┘ᣞࡌࠊᅒ 㻖㻃 㼑㻐㻶㼌㻋㻔㻔㻔㻌⾪㟻୕䛱Ề⣪⤂❻໩䟺୕䟻ཀྵ䛹䝥䝅䝯⤂❻໩䟺ୖ䟻䛝䛥ᚃ䚮Ⓣ㔘㞹ᯊ䛝䛥 㻶㻨㻰 ാ-2-ᅒ 㻗 䝥䝅䝯⤂❻໩ 㼑㻐㻶㼌㻋㻔㻔㻔㻌㻃䛱䛐䛗䜑 㻳㼗 㞹ᯊ᭯↋䛱䜎䜑ක㞹Ὦ≁ᛮ㻃㻃 ᅒ 㻘㻃 㻃 㻎㻔㻑㻓㻹㻋㼙㼖㻃㻤㼊㻒㻤㼊㻦㼏㻌㞹న༰ຊ᫤㻃㻃 䛱䛐䛗䜑㞹ᴗ䛴Ꮽᏽᛮ㻃ฌ⌦ࡊࡒࠊ Q8L ⾪㟻ࢅỀ⣪⤂❻໩ཀྵࡦ࣒ࢲࣜ⤂❻໩ࡖࡒࠊཤ↯⏕ +94<4 㞹ᴗࡢࠉᑙ㞹ᛮ࢝ࣚࢪࡊࡒᚃ࡞Ⓣ㔘㞹ᯊࡊࡒ஦⛸㢦ࡡモᩩࡡ⾪㟻+94㸝+IRSHI8Q4㸞୕࡞ <4 ᚜⢇Ꮔᠩ⃦ᾦാࢅ 8*2 ࡚ふᐳࡊࡒࠊᅒ  ࡞♟ࡌࡻ࠹࡞ྜྷ

ࢅሧᕱࡊ࡙ࠉ々ྙ㞹ᴗ࡛ྜྷᵕ࡞⇍ฌ⌦ࡌࡾ

ࡋ㏳㞹㔖࡚Ⓣ㔘ࢅ㞹ᯊࡊࡒ࡞ࡵ౿ࢂࡼࡍⓉࡆ࡛࡞ࡻࡽష⿿ࡊࡒࠊ㔘᚜⢇Ꮔᙼ࠿ኬࡀࡂ␏࡝ࡖࡒࠊ⾪㟻࡞ಞ㣥ᅒ  ࡞࠽࠷࡙ࠉ々ྙ㞹ᴗࡡỀ㓗໩ࡡක㞹ࡈࡿࡒ࣒ࢲࣜᇱ࠿㞹ᯊ࡞ᙫ㡢ࡊ࡙࠷ࡾࡆ࡛Ὦࡡ❟ࡔ୕࠿ࡽ㞹న࠿ࠉ+94<4 㞹ᴗࡻࡽ⣑࠿ฦ࠾ࡾࠊ; ㇿ࡞ࢨࣆࢹࡊ࡙࠷ࡾࠊ㑇ඔ๠࡛ࡊ࡙ ࡈࡼ࡞ࡆࡡ᫤ࡡ 5W ಞ㣥࠿㞹ᴗ≁ᛮࡡᨭၻ(-4- ࢅ῟ຊࡊࡒሔྙ࡞ࡵྜྷᵕࡡࢨࣆࢹ࠿࡞࡜ࡡ⛤ᗐᐞ୙ࡌࡾࡡ࠾ࢅㄢ࡬ࡾࡒࡴ࡞ࠉふῼࡈࡿࡒࠊࡆࡡ⤎ᯕࡢࠉ୕オࡡ々ྙ㞹ᴗỀฦよකり፳࡛ࡊ࡙Ⰳࡂ▩ࡼࡿ࡙࠷ࡾ 9L4࡞࠽࠷࡙ࠉᅒ㸦࡞♟ࡌࡻ࠹࡝஦ṹ㝭ທ㉫ࡡࢅฺ⏕ࡊ࡙ n-Si-CH3 ,Pt/ITO/TiO2 々ྙ㞹ᴗࢅᶭᵋ࡞ࡻࡾỀࡡක㓗໩ฦよ࠿㐅⾔ࡊ࡙࠷ࡾషᠺࡊࡒࠊ9L4 ᠺ⭯࡞ࡢࢪࣂࢴࢰἪࢅฺ⏕ࡆ࡛ࢅ♟ࡊ࡙࠷ࡾࠊࡱࡒࠉࡆࡡ々ྙ㞹ᴗࡡࡊ࡙ࠉࡐࡡ⭯ཉࡢ⣑ QP ࡛ࡊࡒࠊᅒ  ࡞ක㞹Ὦࡢࠉ;[V&J&J(O ࡡ㞹న࡚ක↯♟ࡌࡻ࠹࡞ࠉⓉ㔘ࢅ㞹ᯊࡌࡾࡆ࡛࡚ක㞹Ὦᑏࢅ⤾ࡄ࡙ࡵẒ㍉ⓏᏭᏽ࡚࠵ࡖࡒ㸝ᅒ 㸞ࠊ࠿ᚋࡼࡿࡾࡆ࡛࠿ฦ࠾ࡾࠊࡆࡿࡢ Q8L ࡛

ᅒ 7 ࡞ࠉn-Si-CH3,Pt/ITO/WO3 々ྙ㞹ᴗ࡛

9L4 㛣࡞࠽࠷࡙ࠉ5W ࠿࢞ࣔࣛ࢓࣭ࡡࢣ࣭ࢹFTO/WO3 㞹ᴗࡡක㞹ንᥦຝ⋙ .5(* ࢅ♟ࡌࠊ⬗ࡡ഼ࡀ࡞ࡻࡽ㞹Ꮔ⛛ິ࠿ᨭၻࡈࡿࡒࡒࡴ

ࡆࡆ࡚ࡢ㑇ඔ๠࡛ࡊ࡙ (-4- ࢅ῟ຊࡊ࡙࠷࡚࠵ࡾ࡛ᛦࢂࡿࡾࠊ

࡝࠷ࠊ࡜ࡔࡼࡡ㞹ᴗࡵ 450nm ௛㎾࠾ࡼක㞹ን໩ຝ⋙࠿᛬⃥࡞ቌຊࡌࡾലྡྷ࡞࠵ࡖࡒࠊ

Q8L (-  5 W.94 <4  々 ྙ㞹 ᴗࡆ ࡡ ἴ 㛏 ࡢ WO3 ࡡ ࣁ ࣤ ࢺ ࢟ ࣔ ࢴ ࣈ 㸝 ⣑㔘ᒌ㓗໩∸࡛ࡊ࡙ <4 ࢅ⏕࠷ࡒሔྙࡡ々2.8eV㸞࡛ୌ⮬ࡊ࡙࠽ࡽࠉWO3 ᒒࡡකྺ཭࡞ྙ㞹ᴗ࡞࠽ࡄࡾ㞹Ὦ㸢㞹న᭜⥲ࢅࠉ+94<4㉫ᅄࡊ࡙࠷ࡾࠊࡱࡒ <4 ࡡྺ཭㡷ᇡ࡞࠽࠷࡙ࠉཤ↯㞹ᴗࡡࡐࡿ࡛Ẓ㍉ࡊ࡙ࠉᅒ  ࡞♟ࡌࠊ⮾࿝῕࠷ࡆ࡛࡞々ྙ㞹ᴗࡡ᪁࠿ +94<4 㞹ῼᏽࡢࠉࢮ࣭࣭ࣚࢨ࣐࣭ࣖࣝࢰ㸝&2ࠉᴗࡻࡽ㧏࠷ೋࢅ♟ࡊࡒࠊ

P<HP 㸞ࢅක″࡛ࡊࠉᑊᴗ࡞ 5W ᯀࠉཤ షᠺࡊࡒ஦⛸㢦ࡡ㞹ᴗࡡኬࡀ࡝㐢࠷ࡢࠉ↯ᴗ࡞ࡢ &J&J(OVFW0(O ࢅ⏕࠷ࠉ㞹よ㈻500nm ࡻࡽࡵ㛏ἴ㛏㡷ᇡ࡚㢟ⴥ࡞⌟ࡿࡒࠊ⁈ᾦ࡛ࡊ࡙ 23F84 Ề⁈ᾦࢅ⏕࠷࡙⾔

᣼ථᅒࢅぜࡾ࡛ FTO/WO3 㞹ᴗࡢ 0%࡚࠵ࡾ-3--2 !2Photocurrent
j / mA cm
denisty/mAcm
Photocurrentdensity

2- 0.05
m 0.04
0.04
c
0.03
A
m0.02
0.02
/
j 0.01

F-SnO2 / WO3(reference electrode);<=)*&;<=)*&

n-Si-CH3,Pt / WO3!"!#$#%&'!("#)$*+,)-".%&)+/01234
2/. %
' $
53% !
6 #(%# "7 &8 %%,9#!9#8%%$!!":!$:#,00

-0.01
-0.4
!0.4-0.2
00
0.2
0.4
0.6
0.4
Uvs.Ag|AgCl(sat.KCl)/VPotential U vs. Ag/AgCl/sat.KCl / Vᅒ 㻙㻃 㻃 㻩㻷㻲㻒㻺㻲㻖 㞹ᴗ䛮 㼑㻐㻶㼌㻐㻦㻫㻖㻏㻳㼗㻒㻬㻷㻲㻒㻺㻲㻖々ྙ㞹ᴗ䛴ක↯ᑏୖ䛭䛴㞹Ὦ䇭㞹న᭜⥲㻃㻃ᅒ 㻚㻃 㻃 㻎㻔㻑㻓㻹㻋㼙㼖㻃㻤㼊㻒㻤㼊㻦㼏㻌㞹న༰ຊ᫤䛱䛐䛗䜑ක㞹ንᥦຝ⋙䚯䟺᣼ථᅒ䛵⦢㍂䜘ᣉኬ䟻㻃ࡡ࡞ᑊࡊ࡙ࠉn-Si-CH3,Pt/ITO/WO3 々ྙ㞹ᴗ

4. ௑ᚃ ࡡㄚ 㢗࡛ Ⓠ ᒈ

࡚ࡢ 0.015%࡛ୌᏽೋࢅ♟ࡊࡒࠊࡆࡡ㡷ᇡ࡚
ࡢࠉWO3 ࡡࡲ࡚ࡢකྺ཭ࡊ࡝࠷ࡡ࡞ᑊࡊ࡙ࠉn-Si ࡛⤄ࡲྙࢂࡎࡒ々ྙ㞹ᴗ࡛ࡌࡾࡆ࡛࡞ ᮇ◂✪࡚ࡢࠉ༖ᑙమࢨࣛࢤࣤ 8L ⾪㟻୕࡞කり፳Ὡᛮࡡ࠵ࡾ <4 ࢅ⤄ࡲྙࢂࡎࡾࡆ
࡛࡚ࠉ々ྙ㞹ᴗ࡞ࡻࡾኯ㝟කỀฦよࢅ┘ᵾࡻࡽࠉn-Si ࡞ࡻࡾකྺ཭࠿㉫ࡀ࡙࠷ࡾ࠷ࡾࡆ࡞◂✪ࢅ㐅ࡴ࡙ࡀࡒࠊࡐࡡࡒࡴ࡞ࡢࠉ々ྙ࡛ࢅ♟ࡊ࡙࠷ࡾࠊࡆࡡᵕ࡝⤎ᯕ࠾ࡼࠉ௑ᅂ㞹ᴗࢅష⏕㞹ᴗ࡛ࡊ࡙⏕࠷࡙ࠉୌ᪁࡚ 5W ࢅషᠺࡊࡒ㞹ᴗᮞᩩࡢࠉ⣰አකࡓࡄ࡚࡝ࡂྊᑊᴗ࡛ࡊฺ࡙⏕ࡊࠉ஦ࡗࡡ㞹ᴗ࡚㞹Ẵ໩Ꮥっක㡷ᇡࢅྱࡳᗀ࠷ࢪ࣋ࢠࢹࣜ㡷ᇡࡡฺ⏕ῼᏽ⣌ࡡᵋ⠇࡫Ⓠᒈࡈࡎࡾࡆ࡛࠿ᚪさ࡛࡝࠿♟ࡈࡿࡒࠊࡾࠊࡆࡿ࡞ࡻࡖ࡙ࠉ々ྙ㞹ᴗ࠾ࡼࡢ㓗⣪Ⓠ⏍ࠉᑊᴗ࠾ࡼࡢỀࡡ㑇ඔ࡞ࡻࡾỀ⣪Ⓠ⏍ࡡ

3. ◂✪ ᠺᯕኯ㝟කᏰධỀฦよࢨࢪࢷ࣑࠿ᐁ⌟ࡈࡿࡾࠊ

Q8L  ༟⤎ᬏ⾪㟻ࢅࠔකሲ⣪໩㸠ࡆࡡ⣌ࡡᵋ⠇࡞ࡻࡖ࡙ࠉỀ⣪⿿㏸࡞ᑊࡌࡾ

,ULJQFUI ཬᚺࠕࡡᡥἪࢅ⏕࠷࡙࣒ࢲࣜᇱ࡚

ᐁ⏕໩࡫ࡡ㐠ࢅวࡽ㛜ࡂࡆ࡛࠿࡚ࡀࠉ໩▴⤂❻ࡊࠉ5W ࢻࢿ⢇Ꮔࢅᢰᣚࡌࡾࡆ࡛࡞ࡻࡖ

㈠″ࡡ௥᭨࢙ࢾ࣭ࣜ࢟ᐁ⌟࡛ (4 ๎΅࡫ࡡ࡙ 5W ࢻࢿ⢇Ꮔᢰᣚ࣒࣬ࢲࣜ⤂❻ Q8L 㞹ᴗష⿿࡞ᠺຉࡊࡒࠊ࣒ࢲࣜ⤂❻໩࡞ࡻࡽࠉ
5W 㞹ᯊཬᚺࡡ㐛㞹ᅸ࠿ኬࡀࡂ࡝ࡽࠉᯊฝ࠿

රమⓏ࡝ᣞ㔢ࢅ୙࠻ࡾࡓࢀ࠹ࠊ
5. Ⓠ⾪ ㄵᩝ ࣛࢪ ࢹ㜴ᐐࡈࡿࡾࡻ࠹࡞࡝ࡾࡆ࡛࠿᪺ࡼ࠾࡞࡝ࡖ

ᮇຐᠺ࡞ࡻࡽᚋࡼࡿࡒᠺᯕࡢ⌟ᅹషᠺ୯࡚࠵ࡾࠊ

ࡒࠊࡱࡒࠉᏽ㞹నୖࠉྜྷࡋ㞹Ẵ㔖࡚㞹ᯊࡈ

Solar Water Photoxidation with a “Surface-modified

ࡿࡒ 5W ⢇Ꮔࡡ⢇ᙼࡢࠉ࣒ࢲࣜ⤂❻໩࡞ࡻࡖn-Si/WO3” Composite Electrode by a Z-scheme࡙ኬࡀࡂ࡝ࡾࡆ࡛࠿ฦ࠾ࡖࡒࠊ

Mechanism, T. Ohtake, M. Morie, M. Toyokawa, A.

ࡆࡡ㞹ᴗ≁ᛮࡢࠉ⣰አක࠾ࡼྊっකࡱ࡚

Imanishi, and Y. Nakato, XXIst IUPAC Symposiumࡡᗀ࠷ࢪ࣋ࢠࢹࣜ㡷ᇡ࡞࠽࠷࡙කᚺ➽ࢅࡌon Photochemistry 2006.

ࡾࡆ࡛࠿♟ࡈࡿࡒࠊࡆࡿ࡞ࡻࡽ஦ṹ㝭ທ㉫ᶭᵋ࡞ࡻࡾක㞹ንᥦ࠿ᐁ⌟ࡊࡒࠊ-4-