2007A1956      BL47XU
ታ㛎⽿છ⠪㧦㊄ ᚑ࿖‫ޔ‬ᚲዻ㧦ᩣᑼળ␠ ࡙࡯࡮ࠫࠚ࡯࡮࠹ࠖ࡮࡜ࡏ
㜞ಽ⸃⢻⎬㨄✢శ㔚ሶಽశߦࠃࠆᰴ਎ઍඨዉ૕ࡊࡠ࠮ࠬ↪ᭂᵻࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠣጀߩൻቇ⚿ว⁁ᘒߩ⹏ଔ
Hard X-ray photoelectron spectroscopy (HX-PES) study on chemical binding states ofultra-shallow plasma-doped silicon layer for the application of advanced ULSI devices*㊄ ᚑ࿖ 1㧘ዊ⇗ 㓷᣿ 2㧘ᬢ ⑼ 2㧘ቊ ⃟᳗ 2㧘૒‫ ᧁޘ‬㓶৻ᦶ 1㧘ጟਅ ൎᏆ 1㧘ਛᧄ ࿻৻ 1㧘
᳓㊁ ᢥੑ 1㧘ᳰ᳗ ⧷ม 2㧘ዊᨋ ໪੺ 2
* C.G. Jin1, M. Kobata 2, K. Yang 2, J. Y. Son 2, Y. Sasaki1, K. Okashita1, K. Nakamoto1,B. Mizuno1, E. Ikenaga2, K. Kobayashi 21ᩣᑼળ␠ ࡙࡯࡮ࠫࠚ࡯࡮࠹ࠖ࡮࡜ࡏ㧘2 ⽷࿅ᴺੱ 㜞ノᐲశ⑼ቇ⎇ⓥ࠮ࡦ࠲࡯
1

Ultimate Junction Technologies Inc., 2 JASRI/SPring-8)G ࡊ࡟ࠕࡕ࡞ࡈࠔࠬࠗࠝࡦᵈ౉㧔)G2#+㧕ࠍࠦࡦࡃࠗࡦߒߚᭂᵻࠗࠝࡦᵈ౉ࠨࡦࡊ࡞ߩ URKMG46# ࠕ࠾࡯࡞೨ᓟߩ⎬ : ✢శ㔚ሶಽశ㧔5KUࠬࡍࠢ࠻࡞㧕ࠍ᷹ቯߒ‫ࠣࡦࡇ࡯࠼ࡑ࠭࡜ࡊޔ‬㧔2&㧕ࠨࡦࡊ࡞ߣᲧセߒߚ‫ࡦࠝࠗޕ‬ᵈ౉ࠨࡦࡊ࡞ߪ‫ޔ‬ᰳ㒱⺃⿠ࠠࡖ࡝ࠕ࠻࡜࠶ࡊ߇ૐ޿ߚ߼‫ޔ‬2& ࠨࡦࡊ࡞ࠃࠅ㜞޿ࡎ࡯࡞ኒᐲࠍ
␜ߒߚ‫)ޕ‬G2#+ ᓟࠗࠝࡦᵈ౉ߒߚࠨࡦࡊ࡞㧔)G2#+ ++㧕ߪ‫ޔ‬5K)G ߩ⚿วߦࠃࠅ‫ޔ‬ૐ⚿วࠛࡀ࡞ࠡ࡯஥ߦᒝ޿㕖ኻ⒓ᕈࠍ␜ߒߚ‫ޕ‬5RKMG46# ࠕ࠾࡯࡞ᓟ‫ޔ‬2& ࠨࡦࡊ࡞ߪ )G2#+ ++ ࠨࡦࡊ࡞ࠃࠅਇ⚐‛ᵴᕈൻߦ߅޿ߡఝ૏ᕈࠍ␜ߒߚ‫ޕ‬5RKMG46# ࠕ࠾࡯࡞ᓟ‫ޔ‬2& ࠨࡦࡊ࡞ߣ )G2#+ ++ ࠨࡦࡊ࡞ߪ౒ߦ㕖Ᏹߦ⦟޿⚿᥏࿁ᓳࠍ␜ߒߚ‫ޕ‬
We measured HX-PES (Si 1s) of ultra low energy ion im-plantion (I/I) samples combined with Ge
pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma
doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due tolower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower bind-ing energy region due
to Si-Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge-PAI+I/I sample.
Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA.
⢛᥊ߣ⎇ⓥ⋡⊛㧦 ࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠣߪ㜞޿ࠬ࡞࡯ࠗࠝࡦᵈ౉ࠍಒ㚧ߔࠆ‫ޔ‬ૐ޿ࠪ࡯࠻ᛶ᛫ࠍᜬߟᭂ࡯ࡊ࠶࠻ࠍᜬߞߡ޿ࠆߩߢ‫ޔ‬ඨዉ૕↥ᬺ PO ࠹ࠢᵻធวᕈ⢻ࠍታ⃻ߒߚ‫ࡦࠝࠗߗߥޕ‬ᵈ౉ࠃࠅࡊ࡜࠭ࡁࡠࠫ࡯ࡁ࡯࠼એᓟߩᭂᵻࠫࡖࡦ࡚ࠢࠪࡦߩ૞ᚑࡑ࠼࡯ࡇࡦࠣߩᣇ߇⦟ᅢߥ㔚᳇․ᕈࠍታ⃻಴᧪ࠆߦ߅޿ߡ‫ޔ‬ૐࠛࡀ࡞ࠡ࡯ࠗࠝࡦᵈ౉ߩઍᦧߩᦨ᦭ജߩ߆㧫୥⵬ߣߒߡផ⮈ߐࠇߡ߈ߚ=?‫ޕ‬ᚒ‫ߪޘ‬㜞޿శๆ෼ㅢᏱߩ :25 ߣ㆑޿‫ޔ‬52TKPI ߩ⎬ : ✢శ㔚ሶ․ᕈ㧔ᒁ߈⛯߈ⴕ߁ฦ⒳ࠕ࠾࡯࡞ᛛⴚߦ᦭ല㧕ࠍታಽశⵝ⟎=?ߪ‫ࡦࡠ࠻ࡠࠢࡦࠪޔ‬శ࠰࡯ࠬ߆ࠄ㨗⃻಴᧪ࠆ *G ࡊ࡜࠭ࡑࡊ࡟ࠕࡕ࡞ࡈࠔࠬࠍࠦࡦࡃࠗG8㨪MG8 ߩࡈࠜ࠻ࡦࠛࡀ࡞ࠡ࡯ߦ߅޿ߡ਎⇇ᦨࡦߒߚᣂߒ޿ࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠣᣇᴺࠍ㐿⊒ߒ‫ޔ‬㜞࡟ࡌ࡞ߩ : ✢ࡈ࡜࠶ࠢࠬࠍឭଏ಴᧪ࠆߚ߼‫ޔ‬ᬌ಴

URKMG46# ࠕ࠾࡯࡞‫ޔ࡞࡯࠾ࠕࡊࡦ࡜ࡘࠪ࠶࡜ࡈޔ‬ᷓߐ߇⚂ PO ߣߥߞߡৼᐲᚒ‫ߩޘ‬૞⵾ߔࠆᭂᵻࠫ࡟࡯ࠩࠕ࠾࡯࡞ࠍ↪޿‫ޔ‬ᓥ᧪↪޿ߡ޿ߚૐࠛࡀ࡞ࠡ

ࡖࡦ࡚ࠢࠪࡦ㗔ၞߩ 5K ߩ⚿ว⁁ᘒࠍ⷗ࠆߎߣ߇಴ࠣࠨࡦࡊ࡞ߣᲧセߒߚ‫ޕ‬ታ㛎ߦ↪޿ࠆశ㔚ሶಽశⵝ㪥㫆㫉㫄㪸㫃㫀㫑㪼㪻㩷㪠㫅㫋㪼㫅㫊㫀㫋㫐㪈㪅㪇(a)⟎ߪᣢߦ52TKPI ߢ㐿⊒߇ㅴ߼ࠄࠇߡ޿ࠆ⎬ : ✢㩷㫅㪄㪪㫀㩷㪪㫌㪹㫊㫋㫉㪸㫋㪼㩷㪠㪠㩷㪞㪼㪧㪘㪠㪂㪠㪠㩷㪧㪛శ㔚ሶಽశ↪ⵝ⟎ࠍ೑↪ߒߚ‫ࡦࠗ࡜ࡓ࡯ࡆޕ‬$.:7 ߩ  ⚿᥏ಽశེߩ޽ߣߦ࠴ࡖࡦࡀ࡞ࠞ࠶࠻ᓟ⟎ಽశེࠍᝌ౉ߒߡ G8 ߩബ⿠ : ✢ࠍᓧࠆ‫ޕ‬㪇㪅㪌⚿ᨐ෸߮⠨ኤ㧦 ࿑㧝ߪหߓ࠼࡯࠭㧔'EO㧕ߩਃߟߩࠨࡦࡊ࡞ߢ޽ࠆࠨࡦࡊ࡞⇟ภ ++㧔ࠗࠝࡦ㪇㪅㪇㪈㪏㪋㪈㪈㪏㪋㪇㪈㪏㪊㪐㪈㪏㪊㪏ᵈ౉ߩߺ㧕‫⇟࡞ࡊࡦࠨޔ‬ภ)G2#+ ++㧔)G2#+ ߢ PO㪈㪏㪊㪎㪙㫀㫅㪻㫀㫅㪾㩷㪜㫅㪼㫉㪾㫐㩷㩿㪼㪭㪀(b)ภ 2&㧔ࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠣߣหᤨߦ࠮࡞ࡈࠕࡕ࡞㩷㫅㪄㪪㫀㩷㪪㫌㪹㫊㫋㫉㪸㫋㪼㩷㪠㪠㩷㪞㪼㪄㪧㪘㪠㪂㪠㪠㩷㪧㪛㪈㪅㪇㪥㫆㫉㫄㪸㫃㫀㫑㪼㪻㩷㪠㫅㫋㪼㫅㫊㫀㫋㫐ࠕࡕ࡞ࡈࠔࠬൻߒߡ߆ࠄࠗࠝࡦᵈ౉㧕‫⇟࡞ࡊࡦࠨޔ‬ࡈࠔࠬൻPO㧕ߩࠕ࠾࡯࡞೨ߩ 5KU ࠬࡍࠢ࠻࡞ࠍ␜ߔ㧔ᵈ౉ᷓߐߪ౒ߦ PO㧕‫ޕ‬2& ࠨࡦࡊ࡞ߩ⚿วࠛࡀ࡞ࠡ࡯ߪ P5K ၮ᧼ࠃࠅ⚂ G8 ૐ޿‫ޕ‬5KU㪇㪅㪌ߩ⚿วࠛࡀ࡞ࠡ࡯ߩᄌേߪࠠࡖ࡝ࠕỚᐲߩᄌേߦ
ࠃࠆࡃࡦ࠼ࠡࡖ࠶ࡊౝߢߩࡈࠚ࡞ࡒḰ૏ߩࠪࡈ࠻
ࠍᗧ๧ߔࠆߩߢ‫ޔ‬2& ߦࠃࠆ⚿วࠛࡀ࡞ࠡ࡯ߩᄌേ㪇㪅㪇㪈㪏㪋㪈㪈㪏㪋㪇㪈㪏㪊㪐㪈㪏㪊㪏ߩ⿠࿃ߪ‫ޔ‬2& ߦࠃࠅ↢ߕࠆᰳ㒱߇ࠠࡖ࡝ࠕ࠻࡜࠶㪈㪏㪊㪎㪙㫀㫅㪻㫀㫅㪾㩷㪜㫅㪼㫉㪾㫐㩷㩿㪼㪭㪀ࡊࠍ⺃⿠ߒࠠࡖ࡝ࠕỚᐲࠍᄌൻߐߖߚߚ߼ߢ޽ࠆ‫ޕ‬

Fig. 1. Si 1s spectra of as-doped samples II,GePAI+II and PD compared with that of nSi substrate : (a) peak height normalized ;(b) Peak position offset with normalized
peak height.

2& ࠨࡦࡊ࡞ߣ KPVTKPUKE5K ߩࡈࠚ࡞ࡒḰ૏߇౒ߦP5K ၮ ᧼  ࠃ ࠅ G8 ૐ ޿ ߩ ߢ ‫ ޔ‬2& ᓟ ၮ ᧼ߩ㔚ሶỚᐲߪᰳ㒱⺃⿠ࠠࡖ࡝ࠕ࠻࡜࠶ࡊߦࠃࠅKPVTKPUKE5K ࡟ࡌ࡞߹ߢਅ߇ߞߡ޿ࠆߩ߇ಽ߆ࠆ‫ޕ‬++ ࠨࡦࡊ࡞ߩ⚿วࠛࡀ࡞ࠡ࡯ߪ 2& ࠨࡦࡊ࡞ࠃࠅ⚂᧪ࠆ‫ޕ‬೨࿁߹ߢߦ‫ޔ‬ᚒ‫ޔߪޘ‬$.:7 ߦ߅޿ߡታᣉ

G8 ૐ޿‫ ߪࠇߎޕ‬++ ࠨࡦࡊ࡞ߩࡎ࡯࡞ኒᐲ߇ 2&ߒߚ⎬ : ✢శ㔚ሶಽశߦࠃࠅ‫ޔ‬PO એਅᭂᵻࡊ࡜ࠨࡦࡊ࡞ࠃࠅ㜞޿ߎߣࠍᗧ๧ߔࠆ‫ޕ‬++ ࠨࡦࡊ࡞ߪ

࠭ࡑ࠼࡯ࡇࡦࠣߣߘߩᵴᕈൻߦ઻ߞߡ 5KU ߩ⚿ว

2& ࠨࡦࡊ࡞ࠃࠅ࠼࡯࠭࡟࡯࠻߇ૐ޿ߚ߼‫ޔ‬ૐ޿ᰳࠛࡀ࡞ࠡ࡯ߩᄌൻߣࠬࡍࠢ࠻࡞ߩᒻ⁁ᄌൻ߇♖ᐲ⦟ߊ᷹ቯ಴᧪ࠆߎߣ߇ಽ߆ࠅ‫ࠣࡦࡇ࡯࠼ࡑ࠭࡜ࡊޔ‬ߪ URKMG46# ࠕ࠾࡯࡞ߣࡈ࡜࠶ࠪࡘ࡜ࡦࡊࠕ࠾࡯࡞ᓟ౒ߦ㕖Ᏹߦ⦟޿ൻቇ⚿ว⁁ᘒ‫ޔ‬හߜ㜞޿ਇ⚐‛ᵴᕈൻߣ⚿᥏࿁ᓳࠍ␜ߒߚ=?‫⎇ᧄޕ‬ⓥߩ⋡⊛ߪ‫ࠗޔ‬ࠝࡦᵈ౉ࠃࠅ߽ࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠣߩᣇ߇⦟ᅢߥ㔚᳇․ᕈ㧔ࡑࠢࡠ㧕ࠍታ⃻಴᧪ࠆේ࿃ࠍ‫ޔ‬5KU ߩ㒱⺃⿠ࠠࡖ࡝ࠕ࠻࡜࠶ࡊߣ㜞޿ࡎ࡯࡞ኒᐲߦߥߞߚߣ⠨߃ࠄࠇࠆ‫ޕ‬++ ࠨࡦࡊ࡞ߣ 2& ࠨࡦࡊ࡞ߣᲧߴߡ‫) ࡞ࡊࡦࠨޔ‬G2#+ ++ ߩࠬࡍࠢ࠻࡞ߩૐ⚿วࠛࡀ࡞ࠡ࡯㗔ၞߢߩࡇ࡯ࠢߩ㕖ኻ⒓ᕈ߇ᄢ᏷ߦჇടߒ
ߚ‫)ޕ‬G2#+ ߦࠃࠆࡇ࡯ࠢᒻ⁁ߩᄢ᏷ߩ㕖ኻ⒓ൻߪ‫ޔ‬)G5K ߩ⚿วߦ↱᧪ߔࠆߣ⠨߃ࠄࠇࠆ‫ޕ‬࿑  ߦ )G2#+ ++ ࠨࡦࡊ࡞ߣ 2& ࠨࡦࡊ࡞ߩൻቇ⚿ว⁁ᘒߩ㆑޿ߦࠃࠅ⑼ቇ⊛ߦ⺑᣿ߔࠆ੐ߢ
޽ࠆ‫ޕ‬URKMG46# ᓟߩ 5KUࠬࡍࠢ࠻࡞ࠍ␜ߔ‫ޕ‬5RKMG46#ᓟ ߩ ࠪ ࡯ ࠻ ᛶ ᛫ ߪ ߘ ࠇ ߙ ࠇ  QJOUS ߣ ታ㛎㧦 ੹࿁ߪᷓߐ PO ߩ )G ࡊ࡟ࠕࡕ࡞ࡈࠔࠬࠗQJOUSߢ޽ࠆ‫ޕ‬5RKMG46# ᓟ‫ޔ‬2& ࠨࡦࡊ࡞ߩ⚿วࠝࡦᵈ౉㧔)G2#+㧕ࠍࠦࡦࡃࠗࡦߒߚࠗࠝࡦᵈ౉ࠨࠛࡀ࡞ࠡ࡯ߪ )G2#+ ++ ࠨࡦࡊ࡞ࠃࠅૐ޿‫ߪࠇߎޕ‬ࡦࡊ࡞㧔ᓥ᧪ᛛⴚߩᦨᣂᲧセ଀㧕ࠍ↪ᗧߒ‫࡯࠾ࠕޔ‬2& ࠨࡦࡊ࡞ߩࡎ࡯࡞ኒᐲ߇ )G2#+ ++ ࠨࡦࡊ࡞ࠃ࡞೨ᓟߩൻቇ⚿ว⁁ᘒࠍ⺞ߴߡࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠅ 㜞 ޿ ‫ ޔ‬හ ߜ 2& ࠨ ࡦ ࡊ ࡞ ߩ ਇ ⚐ ‛ ᵴ ᕈ ൻ ߇㪥㫆㫉㫄㪸㫃㫀㫑㪼㪻㩷㪠㫅㫋㪼㫅㫊㫀㫋㫐㪈㪅㪇n-(a)p+ࠆ࠺࡯࠲߇ೋ߼ߡᓧࠄࠇ‫⹜ࠣࡦࡇ࡯࠼ࡑ࠭࡜ࡊޔ‬ᢱ㩷㫅㪄㪪㫀㩷㪪㫌㪹㫊㫋㫉㪸㫋㪼㩷㪞㪼㪧㪘㪠㪂㪠㪠㩷㪞㪼㪧㪘㪠㪂㪠㪠㪄㪩㪫㪘㩷㪧㪛㩷㪧㪛㪄㪩㪫㪘ߣߩᲧセ߇ߢ߈ߚ‫࡞࡯࠾ࠕޕ‬೨ߩ CUFQRGF ⁁ᘒߢᲧセߒߚ႐ว‫ࡦࠝࠗޔ‬ᵈ౉ࠨࡦࡊ࡞ߪ‫ޔ‬ᰳ㒱⺃⿠ࠠࡖ࡝ࠕ࠻࡜࠶ࡊ߇ૐ޿ߚ߼‫ޔ‬2& ࠨࡦࡊ࡞ࠃࠅ㜞޿ࡎ࡯࡞ኒᐲࠍ␜ߒߚ‫)ޕ‬G2#+ ᓟࠗࠝࡦᵈ౉ߒߚࠨ㪇㪅㪌ࡦࡊ࡞㧔)G2#+ ++㧕ߪ‫ޔ‬5K)G ߩ⚿วߦࠃࠅ‫ޔ‬ૐ⚿วࠛࡀ࡞ࠡ࡯஥ߦᒝ޿㕖ኻ⒓ᕈࠍ␜ߒߚ‫ޕ‬5RKMG
46# ࠕ࠾࡯࡞ᓟ‫ޔ‬2& ࠨࡦࡊ࡞ߪ )G2#+ ++ ࠨࡦࡊ㪇㪅㪇㪈㪏㪋㪈㪥㫆㫉㫄㪸㫃㫀㫑㪼㪻㩷㪠㫅㫋㪼㫅㫊㫀㫋㫐㪈㪅㪇㪈㪏㪋㪇㪈㪏㪊㪐㪈㪏㪊㪏࡞ࠃࠅ‫ޔ‬ਇ⚐‛ᵴᕈൻߦ߅޿ߡఝ૏ᕈࠍ␜ߒߚ‫ޕ‬㪈㪏㪊㪎㪙㫀㫅㪻㫀㫅㪾㩷㪜㫅㪼㫉㪾㫐㩷㩿㪼㪭㪀(b)5RKMG46# ࠕ࠾࡯࡞ᓟ‫ޔ‬2& ࠨࡦࡊ࡞ߣ )G2#+ ++㩷㫅㪄㪪㫀㩷㪪㫌㪹㫊㫋㫉㪸㫋㪼㩷㪞㪼㪧㪘㪠㪂㪠㪠㩷㪞㪼㪧㪘㪠㪂㪠㪠㪄㪩㪫㪘㩷㪧㪛㩷㪧㪛㪄㪩㪫㪘ࠨࡦࡊ࡞ߪ౒ߦ㕖Ᏹߦ⦟޿⚿᥏࿁ᓳࠍ␜ߒߚ‫ ⎬ޕ‬:✢శ㔚ሶಽశߪធวᷓߐ߇ PO એਅߩࡑࠗࠢࡠ࠺ࡃࠗࠬߩਇ⚐‛ዉ౉ߣᵴᕈൻࡊࡠ࠮ࠬߩᦨㆡൻߦ㪇㪅㪌㕖Ᏹߦ᦭↪ߢ޽ࠆ‫ޕ‬ࠠ࡯ࡢ࡯࠼࡮ ⎬ : ✢శ㔚ሶಽశ ࡮ࡊ࡜࠭ࡑ࠼࡯ࡇࡦࠣ㪇㪅㪇㪈㪏㪋㪈㪈㪏㪋㪇㪈㪏㪊㪐㪈㪏㪊㪏࡮ ൻቇ⚿ว ࡮ࠗࠝࡦᵈ౉㪈㪏㪊㪎㪙㫀㫅㪻㫀㫅㪾㩷㪜㫅㪼㫉㪾㫐㩷㩿㪼㪭㪀

Fig. 2. Si 1s spectra of samples GePAI+II andPD before and after spike RTA: (a) peakheight normalized ; (b) peak position offset
with normalized peak height.

ෳ⠨ᢥ₂
=?#*QTKCPF$/K\WPQ6GEJ&KIQH+'&/
 R
=?--QDC[CUJK/;CDCUJK;6CMCVC6)G2#+ ++ ࠨࡦࡊ࡞ࠃࠅఝࠇߡ޿ࠆߎߣࠍᗧ๧ߔ

6QMWUJKOC55JKP-6COCUCMW&/KYC6ࠆ‫ޔ߅ߥޕ‬URKMG46# ᓟ 2& ࠨࡦࡊ࡞ߣ )G2#+ +++UJKMCYC*0QJKTC6*CVVQTK;5WIKVC1ࠨࡦࡊ࡞ߩඨ୯᏷ߪ౒ߦ P5K ၮ᧼࡟ࡌ࡞ߦᚯߞߚ‫ޕ‬0CMCVUWMC#5CMCKCPF5<CKOC#RRN2J[Uߎࠇߪ URKMG46# ᓟ 2& ࠨࡦࡊ࡞ߣ )G2#+ ++ ࠨࡦ.GVV  ‫ޕ‬ࡊ߇౒ߦ㕖Ᏹߦ⦟޿⚿᥏࿁ᓳࠍߒߚߎߣࠍ␜ߔ‫ޕ‬=?%),KP;5CUCMK-1MCUJKVC*6COWTC*+VQ$/K\WPQ61MWOWTC/-QDCVC,,⚿⺰㧦 ᷓߐ PO ߩ )G ࡊ࡟ࠕࡕ࡞ࡈࠔࠬࠗࠝࡦᵈ-KO'+MGPCIC--QDC[CUJK+PVGTPCVKQPCN

౉ࠍࠦࡦࡃࠗࡦߒߚᭂᵻࠗࠝࡦᵈ౉⹜ᢱ㧔ᵈ౉ᷓ

9QTMUJQRQP,WPEVKQP6GEJPQNQI[  Rߐ㧦PO㧕ߦ߅ߌࠆࡏࡠࡦߩൻቇ⚿ว⁁ᘒߦ㑐ߔ