RoHSYJP08C65HJCOMPLIANT

N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)● 100% EAS Tested● 100% ▽VDS Tested

650V
8A＜600mΩ

General Description● Super Junction High Voltage MOSFET technology● Low RDS(ON) & FOM● Extremely low switching loss
● Excellent stability and uniformity● Epoxy Meets UL 94 V-0 Flammability Rating● Halogen Free

Applications● Switching Mode Power Supplies (SMPS)● PWM Motor Controls● LED Lighting● Adapter■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted)Parameter

Symbol

Limit

Unit

Drain-source Voltage

VDS650V

Gate-source Voltage

VGS±30V

1.5

TA=25℃

0.95

TA=100℃
Drain Current

ID

A

TC=25℃8

TC =100℃

5Pulsed Drain Current A

IDM

12A

Avalanche energy B

EAS

90

mJ

3.5

TA=25℃

1.4

TA=100℃

Total Power Dissipation CPD

W

TC=25℃

104

TC =100℃

41

Junction and Storage Temperature Range

TJ ,TSTG℃-55～+150■Thermal resistanceParameter

Symbol

TypMaxThermal Resistance Junction-to-Ambient D

Steady-StateRθJA

2835

Thermal Resistance Junction-to-Case

Steady-StateRθJC11.2

Units℃/W■ Ordering Information (Example)
PREFERED P/N

PACKING
CODEMarking

MINIMUM
PACKAGE(pcs)

INNER BOXQUANTITY(pcs)

OUTER CARTONQUANTITY(pcs)

DELIVERYMODE

YJP08C65HJB1

YJP08C65HJ

50/5000

Tube

1/8
S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJ■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter

SymbolConditions

Min

TypMax

Units

BVDSS

VGS= 0V, ID=250μA

650--V

VDS=650V, VGS =0V--1

VDS=650V, VGS =0V, Tj=150℃--100

Static Parameter
Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

μAIDSSGate-Body Leakage Current

IGSSVGS= ±30V, VDS =0V--±100nA

Gate Threshold Voltage

VGS(th)VDS= VGS, ID=250μA

2.8

3.3

3.8

V

Static Drain-Source On-ResistanceRDS(ON)

VGS=10V, ID=4A-

530

600mΩ

Diode Forward Voltage

VSD

IS=8A, VGS =0V

--

1.2

V

Gate resistanceRG

f=1MHz-15-

ΩMaximum Body-Diode Continuous Current

IS--8A

Input CapacitanceCiss-465-

Output CapacitanceCoss-13-

Reverse Transfer Capacitance

Crss-

1.8-

Total Gate Charge

Qg

-13-

Gate-Source Charge

Qgs

-2.5-

Gate-Drain Charge

Qgd-

6.2-

Reverse Recovery Charge

Qrr-

2.2-μCns

Dynamic Parameters

VDS=325V, VGS =0V, f=1MHz

pF

Switching Parameters

VGS=10V, VDS=325V, ID=8A

nC

IF=8A, di/dt=100A/us
Reverse Recovery Timetrr-221-

Turn-on Delay TimetD(on)-34-

Turn-on Rise Time

tr-

16-

VGS=10V, VDD=325V, ID=8A
RGEN=2.2Ω

nsTurn-off Delay TimetD(off)-23-

Turn-off fall Timetf-12-A.
B.
C.
D.

Repetitive rating; pulse width limited by max. junction temperature.
TJ=25℃, VG=10V, RG=25Ω, L=30mH, IAS=2.45A.
Pd is based on max. junction temperature, using junction-case and junction-ambient thermal resistance.
The value of RθJA is measured with the device mounted on the 40mm*40mm*1.1mm FR-4 PCB board with 1 in2 pad of 2oz. Copper, in the still
air environment with TA =25℃.The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's
specific board design.

2/8S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJ■Typical Electrical and Thermal Characteristics Diagrams
15Tj=25℃

VGS= 20V
10V
8V
7V
6V

VDS= 20V

25℃

ID-Drain Current (A)ID-Drain Current (A)15

105.5V

5V

510150℃
54.5V
0004812163204Figure 1. Output Characteristics

C-Capacitance (pF)

VGS-Gate to Source Voltage (V)10Ciss100Coss
10Crss17VDS=325V
ID=8A
Tj=25℃

8642Tj=25℃

0.100100

2003004005006000Figure 3. Capacitance Characteristics

Figure 4. Gate Charge

RDS(on)-Drain to Source Resistance
Normalized

432

1ID=4A
Tj=25℃
410Qg-Total Gate Charge (nC)305

VDS-Drain to Source Voltage (V)

5RDS(on)-Drain to Source resistance (Ω)

6Figure 2. Transfer Characteristics

10000

1000

5Vgs-Gate to Source Voltage (V)VDS-Drain to Source Voltage (V)15

Vgs=10V
ID=4A

2.52

1.5

10.5056789-75

10-252575

125175

Tj-Junction Temperature (℃)

VGS-Gate to Source Voltage (V)Figure 5. On-Resistance vs Gate to Source Voltage

Figure 6. Normalized On-Resistance

3/8S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJ
100

Is-Reverse Drain Current (A)RDS(on) -Drain to Source resistance (Ω)

0.8

0.7

0.6

VGS=10V

0.5

Tj=25℃

100.1

0.4

02

4

6

0.4

8

0.5

0.6

0.7

0.8

0.9

1

ID-Drain Current (A)Vsd- Source to Drain Voltage (V)Figure 7. RDS(on) VS Drain Current

Figure 8. Forward characteristics of reverse diode

1.4

1.15

ID=250uA

ID=250uA
1.1VGS(th)-Threshold Voltage
Normalized

BVDSS-MAX Drain to Source Voltage
Normalized

25℃150℃
11.05

10.95

0.9

0.85

-75

-252575

125

1.2

10.8

0.6

0.4

175-75-252575

125

Tj-Junction Temperature (℃)

Tj-Junction Temperature (℃)

Figure 9. Normalized breakdown voltage

Figure 10. Normalized Threshold voltage

175150

10Ptot-Power Dissipation (W)ID-Drain Current (A)864210050

00-50050100-50150050100150Tc-Case Temperature (℃)

Tc-Case Temperature (℃)

Figure 11. Current dissipation

Figure 12. Power dissipation

4/8
S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJ
100

ID-Drain-Source Current (A)Zth(J-C)-Thermal Resistance (℃/W)

101
D=0.5
D=0.3

0.1

D=0.1

D=0.05
D=0.02
D=0.01

10 Operation in this area islimited by R DS(ON)

300us
11ms
10ms

DC

0.1
TJ(max)=150℃
TC=25℃

Single Pulse

0.01
0.000001

0.00001100us

0.00010.001

0.010.1Single Pulse

0.01

11

Square Wave Pulse Durtion(S)

10100

1000

VDS-Drain to Source Voltage (V)Figure 13. Maximum Transient Thermal Impedance

Figure 14. Safe Operation Area

■ Test Circuits & Waveforms
EAS=1/2*L*IAS2
Tp

VGS
DSL

Tp

GIAS

A
DID

VDD
DUT

25Ω

BVDSS

Vds

GS

Tp

VDS

Figure A. Unclamped Inductive Switching (UIS) Test Circuit & Waveform

5/8
S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJ
DR1VGS

VGS (V)Qg

R2G10V

SC1
VDD

D
R3

VGS(pl)

DUT

GIG

Qgd

Qgs

SCharge (C)Figure B. Gate Charge Test Circuit & Waveform

VDS
90%

L

90%90%

D

DUT

C1C2

VDD

Vds

Rg
GS
R shunt

Vgs

VR

10%

10%

10%

VGS
tD(on)

tftD(off)tr

Id=VR/R shuntt(off)t(on)Figure C. Resistive Switching Test Circuit & Waveform

DRg

ISD

GS

D

C1

C2

VDD
trr

DUT

GS
R shunt

VR

25%IRRM
Qrr

L

IRRM

Figure D. Diode Recovery Test Circuit & Waveform

6/8
S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJ■ TO-220AB-E Package information
A2D

φE3

DIMENSIONS
Millimeter

INCHES
SYMBOL
MIN.

MAX.

MIN.

MAX.

A1

0.093

0.114

2.350

2.900

A20.176

0.184

4.470

4.670

b0.028

0.036

0.710

0.910

b2

0.048

0.054

1.220

1.360

c0.019

0.024

0.470

0.600

c2

0.047

0.055

1.200

1.400
10.370

E1E

E2

c2

D1

L1

A1
b2

D

0.382

0.408

9.700

D10.276

0.350

7.000

8.890

E

0.579

0.622

14.70015.800E10.350

0.373

8.900

9.470

E20.4630.535

11.75013.600b0.108BSC

2.740BSC

e0.200BSC

5.080BSC

LE3e1e1ce

TOP VIEW

SIDE VIEWBACK VIEW

0.100BSC

2.540BSC

L

0.508

0.583

12.90014.800

L10.100

0.151

2.540

3.840

φ0.142

0.154

3.600

3.900

NOTE:
1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS.
2.TOLERANCE 0.1mm UNLESS OTHERWISE SPECIFIED.

7/8
S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

YJP08C65HJDisclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves theright to make changes without notice for the specification of the products displayed herein to improve reliability, function or design orotherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used withequipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safetydevices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use ofsale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://
www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

8/8S-E505
Rev.1.0,7-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com