PROGRAM【October 7th, Wednesday】
Opening Session (13:00-13:10)
Plenary Session (13:10-14:00)
Chair: N. Fujimura (Osaka Prefecture University)
Plenary
13:10 (50min+poster)
Research on Nitride Semiconductors ~from the Dawn, through the Present, to the Future~
T. Matsuoka
Tohoku University

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1

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5

Break (14:00-14:10)
Session We1 (14:10-14:40)
Chair: K. Kojima (Tohoku University)
We1 [Invited] 14:00 (30min)
Recent Progress of Power Semiconductor Devices and Expectation for GaN Power Devices
N. Iwamuro
Univsersity of Tsukuba

Break (14:40-14:50)
Session We2 (14:50-15:20)
Chair: T. Araki (Ritsumaikan University)
We2 [Invited] 14:50 (30min)…
Breakthrough Technologies for AlGaN-based UV-B Laser DiodeM. Iwaya*, T. Omori*, S. Tanaka*, Y. Ogino*, K. Yamada*, S. Ishizuka*, S. Teramura*, K. Sato*,**, S. Iwayama*,***, T.
Takeuchi*, S. Kamiyama*, I. Akasaki*,****, and H. Miyake****Meijo University, **Asahi-Kasei Corporation, ***Mie University, and ****Nagoya University

9

Break (15:20-15:30)
Short Presentation 1 (15:30-16:10)
Chair: F. Ishikawa (Ehime University)
P1-1
15:30 (2min+poster)
RF-MBE growth and characterization of high-In-content GaInN/GaInN multiple layers
K. Tahara, R. Yoshida, H. Hirukawa, T. Yamaguchi, T. Onuma, and T. Honda
Kogakuin University

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11

P1-2
15:32 (2min+poster)Growth of GaN Film on ScAlMgO4 Substrate by RF-MBE
S. Kayamoto*, T. Fuji*,** T. Fukuda**, R. Sugie***, S. Mouri*, and T. Araki**Ritsumeikan Univ, **Fukuda Crystal Laboratory, ***Toray Research Center, Inc.

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13

P1-3
15:34 (2min+poster)
A theoretical model for carbon coverage on GaN polar surfaces during MOVPE
D. Yosho*, Y. Inatomi*, and Y. Kangawa*,***Kyushu University, **Nagoya University…

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17

P1-5
15:38 (2min+poster)…
Hole Traps Introduced by Electron Beam Irradiation in Homoepitaxial n-type GaN and Its Irradiation Energy Dependence
M. Endo, M. Horita, K. Kanegae, and J. Suda
Nagoya University

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21

P1-4
15:36 (2min+poster)
Epitaxial Growth of InGaN Thin Film with High InN Molar Fraction by Pulsed DC Sputtering
Y. Onishi*, H. Miura**, N. Takahashi**, M. Uemukai*, T. Tanikawa*, and R. Katayama**Osaka University, **Tokyo Electron Technology Solutions Limited

P1-6
15:40 (2min+poster)
Impact of The Schottky Barrier Height on Deep-level Transient Spectroscopy of Gamma-ray-irradiated n-type GaN
K. Aoshima, M. Horita, and J. Suda
Nagoya University

P1-7
15:42 (2min+poster)…
23
Fabrication of GaN Polarity-Inverted Structure by Inductively Coupled Plasma Reactive Ion Etching and Surface Activated Bonding
N. Yokoyama, R. Tanabe, S. Ichikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University
P1-8
15:44 (2min+poster)…
25
Transverse Quasi-Phase-Matched Second Harmonic Generation using Polarity-Inverted GaN Channel Waveguide with Input
Grating Coupler. Murata, N. Yokoyama, T. Komatsu, Y. Morioka, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University
P1-9
15:46 (2min+poster)…
27
Layer-by-layer Synthesis of Metal Oxide Compounds by Programable Pulsed-DC Sputtering Combined with Oxygen Pulsed Supply
H. Isshiki*, K. Miyagi*, Y. Tanaka*,**, and S. Saisho*,***The University of Electro-Communications, **Shincron Co. LTD.
P1-10
15:48 (2min+poster)…
Annealed Proton-Exchanged Waveguide with Large Mode Size in Quasi-Phase-Matched MgO:SLT for High Power Second
Harmonic Generation
R. Noro, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University

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P1-11
15:50 (2min+poster)Growth of GaAs nanowires on 2-inch Si substrate by molecular beam epitaxy
M. Yukimune, K. Sakaguchi, R. Tsutsumi, T. Ohno, and F. Ishikawa
Ehime University

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31

P1-12
15:52 (2min+poster)
Effect of Bi flux on the molecular beam epitaxial growth of GaAs/GaAsBi core/shell nanowires
M. Okujima*, S. Mori*, K. Yoshikawa*, M. Yukimune*, R. D. Richards**, and F. Ishikawa**Ehime University, **University of Sheffield

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33

P1-13
15:54 (2min+poster)Two-step photon up-conversion solar cells using up-conversion of holes
S. Asahi*, M. P. Nielsen**, N. J. Ekins-Daukes**, and T. Kita**Kobe University, **University of New South Wales

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35

P1-14
15:56 (2min+poster)…
37
Crystallization of Ni (111) layer on c-plane sapphire substrate for high-quality graphene precipitation - utilization of crystallization
starter layer A. Nakashima, T. Kashio, T. Murahashi, T. Soga, T. Maruyama, and S. Naritsuka
Meijo University
P1-15
15:58 (2min+poster)In-situ X-ray diffraction monitor of multilayer graphene by precipitation method using nanodiamond
T. Kashio, A. Nakashima, Y. Ueda, T. Maruyama, and S. Naritsuka
Meijo University

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39

P1-16
16:00 (2min+poster)High pressure and high temperature treatment for the impurity control of P implanted diamond
K. Higashiura, R. Fukuta, F. Ishikawa, T. Shinmei, H. Ohfuji, and T. Irifune
Ehime University…

41- P7 -

P1-17
16:02 (2min+poster)Magnetic tunnel junction based sensors for electric current monitoring
M. Oogane, T. Ogasawara, M. Tsunoda, and Y. Ando
Tohoku University

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43

P1-18
16:04 (2min+poster)Highly thermal-stable monolayers formed on a gold surface using benzenedithiol
H. Takahashi, N. Ikematsu, Y. Hattori, and M. Kitamura
Kobe University

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45

P1-19
16:06 (2min+poster)Self-consistent analysis of PCSEL under CW operation
S. Katsuno, T. Inoue, M. Yoshida, M. De Zoysa, K. Ishizaki, and S. Noda
Kyoto University

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47

P1-20
16:08 (2min+poster)
The effect of laser pulse interval on laser-induced periodic nanostructure formation
T. Ohgai, R. Miyagawa, and O. Eryu
Nagoya Institute of Technology

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Break (16:10-16:20)
Session We3 (16:20-16:50)
Chair: H. Nishinaka (Kyoto Institute of Technology)
We3 [Invited] 16:20 (30min)
Deep and Vacuum UV Emission Properties in Rocksalt-structured MgZnO
T. Onuma*, K. Kudo*, K. Ishii**, M. Ono*, Y. Ota***, K. Kaneko**, T. Yamaguchi*, S. Fujita*, and T. Honda**Kogakuin University, **Kyoto University, and ***Tokyo Metropolitan Industrial Technology Research InstituteBreak (16:50-17:00)

Poster Session 1 (17:00-18:00)

Free time (18:00-18:50)

Company Introduction 1 (18:50-19:00)

Rump Session (19:00-20:30)“PhD researchers lead not only academia but also industry and global society”
Organizer:

N. Fujimura(Osaka Prefecture University)

Panelists:

T. Asahi
S. Takahashi
S. Tsuji
E. Hoshi(Waseda University)(Leave a Nest Co., ltd.)(Seijo University)(The University of New Mexico)- P8 -

【October 8th, Thursday】
Session Th1 (9:00-9:30)
Chair: Y. Kangawa (Kyushu University)
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P2-1
9:40 (2min+poster)…
Synthesis of high-entropy oxide epitaxial thin films: layered rock salt LiCr1/6Mn1/6Fe1/6Co1/6Ni1/6Cu1/6O2
K. Wang*, K. Nishio *, K. Horiba**, M. Kitamura**, K. Edamura*, D. Imazeki*, R. Nakayama*, R. Shimizu*,***, H.
Kumigashira** ****, and T. Hitosugi**Tokyo Institute of Technology, **High Energy Accelerator Research Organization, ***PRESTO, ****Tohoku Univeristy

59

P2-2
9:42 (2min+poster)
Change in the defect structures of composition controlled electronic-ferroelectric YbFe2O4 thin films
K. Shimamoto, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, and N. Fujimura
Osaka Prefecture University

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61

P2-3
9:44 (2min+poster)Formation process of metastable Al-doped HfO2 thin films phases and directly on Si by atomic layer deposition
S. Takarae, K. Takada, D. Kiriya, A. Ashida, T. Yoshimura, and N. Fujimura
Osaka Prefecture University

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63

P2-4
9:46 (2min+poster)Growth of Metastable Rhombohedral Structured Oxides Using Alpha-Fe2O3 Buffer Layers via Mist CVD Method
K. Shimazoe, H. Nishinaka, Y. Arata, Y. Ito, and M. Yoshimoto
Kyoto Institute of Technology

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65

P2-5
9:48 (2min+poster)
Data Analysis for Sputtering and High-Temperature Annealing in AlN Templates Fabrication
A. Kusaba*, Y. Kangawa*,**, K. Norimatsu***, and H. Miyake****Kyushu University, **Nagoya University, ***Mie University

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67

P2-6
9:50 (2min+poster)…
Epitaxial growth of various p- and n-type oxide thin films on flexible synthetic mica using mist chemical vapor deposition
Y. Arata, H. Nishinaka, K. Shimazoe, Y. Ito, and M. Yoshimoto
Kyoto Institute of Technology

69

P2-7
9:52 (2min+poster)…
Comparison of Microstructures in alpha-Ga2O3 and alpha-In2O3 Films Grown on alpha-Al2O3 Substrates by Mist CVD
Y. Hayakawa*, S. Ohno*, T. Yamaguchi*, T. Kiguchi**, S. Takahashi*, H. Yokoo*, T. Onuma*, and T. Honda**Kogakuin University, **Tohoku University

71

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73

P2-9
9:56 (2min+poster)…
In-plane Anisotropy in the Direction of the Dislocation Bending in alpha-Ga2O3 Grown by Epitaxial Lateral Overgrowth
K. Kawara*,**, T. Oshima*, M. Okigawa*, and T. Shinohe**FLOSFIA Inc., **Kyoto University

75

P2-10
9:58 (2min+poster)…
P-type alpha-(Ir,Ga)2O3 with a band gap of more than 4 eV
K. Kaneko*, Y. Masuda*, S. Kan*, I. Takahashi**, Y. Kato**, R. Kanno**, M. Sugimoto**, T. Shinohe**, and S. Fujita**Kyoto University, ** FLOSFIA Inc.

77

Th1 [Invited]
9:30 (30min)
Introduction to “Future Materials Exploring Initiative-Engineering for Diverse Stable Phases-”
K. Sato*,***Japan Science and Technology Agency and **Tokyo University of Agriculture and Technology

Break (9:30-9:40)
Short Presentation 2 (9:40-10:30)
Chair: R. Miyagawa (Nagoya Institute of Technology)

P2-8
9:54 (2min+poster)Elimination of Threading dislocations in alpha-Ga2O3 Grown by Double-layered Epitaxial Lateral Overgrowth
K. Kawara*,**, Y. Oshima***, M. Okigawa*, and T. Shinohe**FLOSFIA Inc., **Kyoto University, ***National Institute for Materials Science- P9 -

P2-11
10:00 (2min+poster)Band alignment of MgZnO alloys and the related band offset calculations
Y. Ota*, K. Kaneko**, T. Onuma***, and S. Fujita***TIRI, **Kyoto University, ***Kogakuin University

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79

P2-12
10:02 (2min+poster)
Structural and electronic properties of 2-dimensional GaN on van der Waals substrates
T. Yayama*, A. K. Lu**, T. Nakanishi**, and T. Morishita***Kogakuin University, **AIST

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81

P2-13
10:04 (2min+poster)
Raman study of the phase transition in VO2 ultrathin films on hexagonal-boron nitride
B. Yu*, S. Genchi*, M. Yamamoto**, K. Watanabe***, T. Taniguchi***, H. Tanaka**Osaka University, **Kansai University, ***National Institute for Materials Science

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83

P2-14
10:06 (2min+poster)
Topological phase transformation of transition metal dichalcogenides via contacting electron donor molecules
K. Matsuyama, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, and D. Kiriya
Osaka Prefecture University

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85

P2-15
10:08 (2min+poster)Formation of periodic nanostructures by circularly polarized laser
H. Matsuura, R. Miyagawa, and O. Eryu
Nagoya Institute of Technology

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87

P2-16
10:10 (2min+poster)Removal of polymer residues from PMMA-protected transferred graphene PMMA
K. Niwa, T. Fukami, T. Maruyama, and S. Naritsuka
Meijo University

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89

P2-17
10:12 (2min+poster)First demonstration and characterization of semipolar deep ultraviolet LEDs on r-AlN
R. Akaike, M. Funato, and Y. Kawakami
Kyoto University

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91

P2-18
10:14 (2min+poster)
Design and Fabrication of AlN Waveguide Microcavity SHG Device
S. Umeda, T. Nagata, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University

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93

P2-19
10:16 (2min+poster)
Evaluation on formation energies of point defect in group III nitride semiconductors for space-use solar cells
R. Suzuki, T. Yayama, and T. Honda
Kogakuin Iniversity

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95

P2-20
10:18 (2min+poster)
Impact of Cell Pitch on High-speed Switching Performance in GaN Vertical Trench MOSFETs
T. Ishida, K. Sakao, T. Kachi, and J. Suda
Nagoya University

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97

P2-21
10:20 (2min+poster)
Suppression of efficiency-droop for Eu-doped GaN using amplified spontaneous emission
A. Takeo, S. Ichikawa, S. Maeda, J. Tatebayashi, and Y. Fujiwara
Osaka University

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99

P2-22
10:22 (2min+poster)
Impact of fabrication errors on laser oscillation in GaN:Eu-based photonic crystal cavities
T. Iwaya, S. Ichikawa, M. Murakami, J. Tatebayashi, and Y. Fujiwara
Osaka University

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101

P2-23
10:24 (2min+poster)
Effect of boron implantation process conditions on isolation characteristics of GaN-based micro LED arrays
F. Yoshimura, K. Yamane, and A. Wakahara
Toyohashi University of Technology

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103

P2-24
10:26 (2min+poster)…
Performance Analysis of an InAs/GaAs/Al0.3Ga0.7As Quantum Dot in well Intermediate Band Solar Cell under Two step
Photoexcitations
Y. Zhu, S. Asahi, K. Watanabe, and T. Kita
Kobe University

105- P10 -

P2-25
10:28 (2min+poster)
Absolute Photoluminescence Spectroscopy on InAs/GaAs Quantum Dot Solar Cells: Bias Voltage Dependence
R. Tamaki*,****, Y. Shoji**, J.-F. Guillemoles***,****, and Y. Okada*,*****The University of Tokyo, **AIST, ***IPVF, ****NextPV LIA…

107

Break (10:30-10:40)
Poster Session 2 (10:40-12:10)

Company Introduction 2 (12:10-12:50)

Free time (Lunch) (12:50-13:40)

Session Th2 (13:40-14:10)
Chair: M. Kitamura (Kobe University)Th2 [Invited]
13:40 (30min)… 109
New ferromagnetic semiconductos and spintronics applications: Fe-doped narrow-gap III-V ferromagnetic semiconductors andheterostructures with high Curie temperature
M. Tanaka*, L. Anh*, K. Takiguchi*, S. Goel*, S. Ohya *, N. Tu*,**, and P. Hai*,****The Univsersity of Tokyo, **Ho Chi Minh City University of Pedagogy, ***Tokyo Institute of Technology

Break (14:10-14:20)
Short Presentation 3 (14:20-15:10)
Chair: T. Yayama (Kogakuin University)
P3-1
14:20 (2min+poster)… 111
Characteristics of droplet formations at the molecular beam epitaxy of GaAsBi compound nanostructures on Si(111) and GaAs(001)substrates
K. Yoshikawa*, K. Nagashima**, T. Yanagida**, and F. Ishikawa**Ehime University, **The University of Tokyo
P3-2
14:22 (2min+poster)Controlling Bi content in low-temperature-grown GaAs1-xBix
T. Umenishi*, Y. Takagaki*, Y. Tominaga*, M. Yukimune**, and F. Ishikawa***Hiroshima University, **Ehime University

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113

P3-3
14:24 (2min+poster)
Dramatic enhancement of current and voltage in modulation-doped two-step photon up-conversion solar cells
K. Watanabe, S. Asahi, Y. Zhu, and T. Kita
Kobe University

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115

P3-4
14:26 (2min+poster)… 117
Development of mid-infrared photodetector can operate under room temperature with high sensitivity using intraband transition
K. Nakabayashi, S. Asahi, and T. Kita
Kobe University
P3-5
14:28 (2min+poster)… 119
Direct growth of single-layer graphene on 2-inch a-plane sapphire substrate using low-pressure CVD without metal catalyst
Y. Ueda, T. Maruyama, and S. Naritsuka
Meijo University
P3-6
14:30 (2min+poster)Low temperature graphite growth on SiO2 substrate using Ga solution
T. Fukami, K. Niwa, Y. Kobayashi, T. Maruyama, and S. Naritsuka
Meijo University- P11 -

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121

P3-7
14:32 (2min+poster)
Thermal conductivity of suspended twisted bilayer graphene
J. Doi, S. Mouri, and T. Araki
Ritsumeikan University

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123

P3-8
14:34 (2min+poster)Seed layer technique leading to high-efficiency multi-junction solar cells on glass
T. Nishida, T. Suemasu, and K. Toko
University of Tsukuba

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125

P3-9
14:36 (2min+poster)Highly Tolerant Diamond Schottky Barrier Photodiodes for High-Power Excimer Lamp and 70 MeV Protons
M. Imura*, M. Togawa**, H. Okumura***, J. Nishinaga****, M. Miyahara**, T. Matsuki**** and Y. Koide**NIMS, **KEK, ***Univsersity of Tsukuba, ****AIST

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127

P3-10
14:38 (2min+poster)Electrical and Optical Characteristics of ITO Electrode for Electrically-Tunable Waveguide Phase Shifter
A. Tomibayashi, Y. Hisada, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University

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129

P3-11
14:40 (2min+poster)… 131
Formation and optical characteristics of Tm,Yb-codoped ZnO nanowires on silicon substrates by sputtering-assisted MOCVD
N. Nishiyama, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara
Osaka University
P3-12
14:42 (2min+poster)
Solution processed nonvolatile organic transistor memories based on ambipolar organic semiconductors
M. Higashinakaya*, T. Nagase*,**, R. Hattori*, S. Tazuhara*, T. Kobayashi*,** and H. Naito*,***Osaka Prefecture University, ** RIMED

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133

P3-13
14:44 (2min+poster)
Evaluation of carrier mobility in organic metal-oxide-semiconductor capacitors
Y. Kimura, Y. Hattori, and M. Kitamura
Kobe University

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135

P3-14
14:46 (2min+poster)
Influence of the Layer Number of Graphene on Remote Epitaxy of InN by RF-MBE
K. Matsushima, S. Mouri, and T. Araki
Ritsumeikan University

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137

P3-15
14:48 (2min+poster)… 139
Role of Low-Temperature Buffer Layer and GaN Flattening Layer on Metalorganic Vapor Phase Epitaxy of Lattice-Matched InGaN
on ScAlMgO4
S. Yoshida*, N. Ryoki**, K. Miyano**, T. Tanikawa*, M. Uemukai*, and R. Katayama**Osaka University, **Panasonic Corporation
P3-16
14:50 (2min+poster)First Demonstration of Tunable Single-Mode InGaN Laser with Periodically Slotted Structure
A. Higuchi, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
Osaka University

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141

P3-17
14:52 (2min+poster)… 143
Design of Ttransverse Quasi-Phase-Matched Double-Layer AlN Waveguide for 230-nm DUV Second Harmonic Generation
Hiroto Honda*, Naoki Yokoyama*, Asahi Yamauchi*, Tenta Komatsu*, Kanako Shojiki**, Hideto Miyake**, Masahiro Uemukai*,
Tomoyuki Tanikawa* and Ryuji Katayama**Osaka University, ** Mie University
P3-18
14:54 (2min+poster)…
Epitaxial growth of four-inch AlGaN-based deep ultraviolet LEDs by using a large-scale mass production MOCVD tool
J. Yoshinaga*, Y. Yano*, T. Arimura*, S. Koseki*, and H. Hirayama***Taiyo Nippon Sanso Corporation, **RIKEN

145

P3-19
14:56 (2min+poster)Growth of AlGaN on AlN Template by RF-MBE and Their Spectral Responsivity in Deep UV Spectral Region
M. Hashimoto, N. Tachibana, M. Nakanishi, T. Yamaguchi, T. Honda, and T. Onuma
Kogakuin University

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147

P3-20
14:58 (2min+poster)
Relationship between crystallinity and emission property in RF-MBE growth of GaN
N. Tachibana, M. Hashimoto, T. Yamaguchi, T. Honda, and T. Onuma
Kogakuin University…

149- P12 -

P3-21
15:00 (2min+poster)Comparative study of dislocation classification in HVPE-grown GaN by etch pit method and multiphoton-excitation
photoluminescence imaging
M. Tsukakoshi, T. Tanikawa, M. Uemukai, and R. Katayama
Osaka University

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151

P3-22
15:02 (2min+poster)… 153
Resonance characteristics of piezoelectric GaN cantilever fabricated by photoelectrochemical etching
T. Yamada*, Y. Ando*, H. Watanabe**, Y. Furusawa**, M. Deki*,*****, A. Tanaka**,***, S. Nitta**, Y. Honda**, J. Suda*,**,
H. Amano**,****Nagoya University, **IMaSS, ***NIMS,
P3-23
15:04 (2min+poster)
Design of Waveguide Directional Coupler for Electric-Field Driven GaN Mach-Zehnder Interferometer
Y. Hisada, A. Tomibayashi, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University

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155

P3-24
15:06 (2min+poster)
Design of GaN Waveguide Microcavity Device for Broadband Photon Pair Generation
T. Nagata, S. Umeda, M. Uemukai, T. Tanikawa, and R. Katayama
Osaka University

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157

P3-25
15:08 (2min+poster)… 159
Design of epitaxial layer structure for AlN/GaN/AlGaN quantum-well channel field-effect transistors grown on AlN substrate
J. Sawada*, L. J. Schowalter**, and J. Suda**Nagoya University, **Asahi Kasei Corporation
VR-1
15:10 (2min+VRposter)Anti Stokes photoluminescence caused by energy transfer in ytterbium doped yttrium aluminum perovskite
Y. Nakayama, Y. Harada, and T. Kita
Kobe University

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161

VR-2
15:12 (2min+VRposter)… 163
Development of MicroLED transfer Technology on flexible sheet
R. Maeda*, K. Masuda*, A. Nishikawa**, A. Loesing**, I. Fukunaga***, and H. Sekiguchi*,*****Toyohashi University of Technology, **ALLOS Semiconductor GmbH, ***Okinawa Institute of Science and Technology
Graduate University, ****JST PRESTO
VR-3
15:14 (2min+VRposter)… 165
Development of GaN-based MicroLED Neural Probe for Specific-Depth Optogenetic Control
D. Shinko*, H. Yasunaga*, T. Takagi*, Y. Nakayama*, K. Mizuguchi*, A. Nishikawa***, A. Loesing***, M. Ohsawa**, and H.
Sekiguchi*,*****Toyohashi University of Technology, **Nagoya City University, ***ALLOS Semiconductor GmbH, ****JST PRESTO
VR-4
15:16 (2min+VRposter)
Correlation between photo excited carrier and spin order of strongly correlated ferroelectric YMnO 3 thin films
K. Miura, K. Shimamoto, D. Kiriya, T. Yoshimura, A. Ashida, and N. Fujimura
Osaka Prefecture University

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167

VR-5
15:18 (2min+VRposter)… 169
Growth of GaN Crystal with Low Oxygen Concentration and Low Dislocation Density by Na-flux PS Method with Li Addition
TechniqueT. Nakajima, T. Yamada, K. Murakami, M. Imanishi, M. Yoshimura, and Y. Mori
Osaka University
VR-6
15:20 (2min+VRposter)Formation of the metastable phase of HfxZr1-xO2 ferroelectric films deposited by atomic layer deposition method
K. Takada, S. Takarae, T. Yoshimura, and N. Fujimura
Osaka Prefecture University

Company Introduction 3 (15:22-15:52)

Break (15:52-16:02)- P13 -…

171

Session Th3 (16:02-16:32)
Chair: H. Isshiki (The University of Electro-Communications)Th3 [Invited]
16:02 (30min)… 173
Electron Beam Technology Innovation by Semiconductor Photocathodes and its Commercialization
T. Nishitani*,**, Y. Honda*, M. Araidai*, H. Amano*, M. Tabuchi*, A. Narita*, H. Yasuda***, F. Ishikawa****, T. Meguro*****,
A. Koizumi**, D. Sato**, and A. Honda***Nagoya University, **Photo electron Soul Inc., ***Osaka University, ****Ehime University, *****Tokyo University of Science

Break (16:32-16:40)
Pster Session 3 and VR Poster Session (16:40-18:10)

Free time (18:10-19:00)
Online Party (19:00-20:00) and Free Banquet- P14 -

【October 9th, Friday】
Session Fr1 (9:00-9:30)
Chair: K. Watanabe (National Institute for Materials Science)
Fr1 [Invited]
9:00 (30min)
Deep-learning-assisted robotic assembly of two-dimensional crystals to build van der Waals superlattices
S. Masubuchi and T. Machida
University of Tokyo

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177

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181

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185

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189

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191

Break (9:30-9:40)
Company Introduction 4 (9:40-11:00)
Tutrial (11:00-11:50)
Chair: R. Katayama (Osaka University)
Tutrial
11:00 (50min)
Quantum Annealing: Progress and Prospects
H. Nishimori
Tokyo Institute of Technology

Free time (Lunch) (11:50-12:40)
Company Introduction 5 (12:40-13:40)
Special Session (13:40-16:15)
Chair: T. Otoki (SCIOCS Co. Ltd.)
13:40 (5min)
Forefront of 5G technology and businessY. Otoki
SCIOCS Co. Ltd.
SP-1
13:45 (30min)
5G system trends and requirements for materials and devices
K. Watanabe
Fujitsu labolatories

Break (14:15-14:25)
SP-2
14:25 (30min)
5G Device market Trend and Examples of RF Fronend
Y. Andoh
Navian Inc.

Break (14:55-15:05)
SP-3
15:05 (30min)
Technologies on RF Acoustic Devices for Wireless Communications and Challenges for 5th Generation Systems
M. UedaTAIYO YUDEN Mobile Technology Co. Ltd.

- P15 -

Break (15:35-15:45)
Chair: K. Shiojima (University of Fukui)
SP-4
15:45 (30min)
GaN HEMT Technologies for 5G Base Transceiver Station Amplifiers
T. Yamamura
Sumitomo Electric Industries, Ltd.

Closing Session (16:15-16:35)- P16 -…

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