2-6-20, Yaesu, Chuo-ku, Tokyo 104-0028, Japan
Tel +81-(0)3-3274-5125 Fax +81-(0)3-3274-5103 http://www.hondafoundation.jp/en/September 28, 2018

The Honda Prize 2018
Awarded to Dr. Fujio Masuoka, Professor Emeritus, Tohoku University-Inventor of the “flash memory” non-volatile semiconductor memoryHonda Foundation, the public interest incorporated foundation (established by Soichiro Honda and his
younger brother Benjiro, and currently led by President Hiroto Ishida) is pleased to announce that theHonda Prize 2018 will be awarded to Dr. Fujio Masuoka, Professor Emeritus, Tohoku University inrecognition of his invention of the world’s first “flash memory” technology, enabling large-capacity
non-volatile semiconductor memories, and his major contributions to technical progress in that domain andto the numbers of persons entering it.
The Honda Prize, established in 1980 and awarded once each year, is an international award that recognizes
the work of individuals or groups generating new knowledge to drive the next generation, from thestandpoint of eco-technology*1. Dr. Masuoka, foreseeing a future era of large capacity data handling,
announced in 1984 the technology behind the “flash memory,” non-volatile semiconductor memory thatcan electrically delete 256K bits of data instantly in one batch. Back then, the DRAM*2 was the mostcommonly used data storage semiconductor memory device. Invented in the 1970s, the DRAM was avolatile memory whose recorded data were automatically erased when power was cut off. The flashmemory, by contrast, was a non-volatile memory that could retain data in that circumstance, as magnetic
memory does. Its other strength was that it required less than one-quarter the bitwise occupied area ofexisting devices, allowing a drastic reduction in product size and cost. Today, flash memory diffusion
contributes to smaller sizes in IT equipment and to far less electricity consumption. In recognition of hisachievement, the Foundation deems it appropriate to award this year’s Honda Prize to Dr. Masuoka.
This year marks the 39th award of the prize. The presentation ceremony will be held on November 19,
2018 at the Imperial Hotel Tokyo, at which Dr. Masuoka will be presented the medal, the certificate and anhonorarium of 10 million yen.
<Dr. Masuoka’s flash memory>
Non-volatility is required when computer data are recorded on an external medium. Ongoing recording isnecessary even in the absence of a power source. In early days, paper tape and punch cards were used,supplanted in the 1950s by magnetic tapes as the recording medium and thereafter by floppy disks and harddisks. This trend has now led to the diffusion of CDs and DVDs, whose information recording is performed
via reflected light. These magnetic and optical media, however, had structural issues concerning data
recording such that reading and writing data required a substantial amount of time, and equipment
miniaturization was difficult.
Semiconductor non-volatile memory retains electrons at what is called a floating gate covered by an
insulation film, and by controlling the method by which electrical current electrons are accumulated andremoved, enabling data recording and elimination. When research began in the first half of 1970s, thequality of the insulation film was poor, and electrons could be retained for only several microseconds.

-1-The late 1970s were a technical watershed for insulation film manufacturing methods, when the research
theme shifted to electrical data overwriting methods. In 1980, an American semiconductor company
brought out the “EEPROM*3,” which enabled overwriting of electrical data. But because electron entry andexit required 2 transistors per bit, the degree of integration could not be increased and recording of large
data quantities was difficult.
In 1983, the majority opinion about recording devices took the view that non-volatile semiconductor
memory was not a substitute for hard disk-led magnetic memory. At that time, however, Dr. Masuoka had
already been creating prototypes using his own favored concepts. Within a semiconductor memory chip
there are innumerable rooms called cells. The world’s research of that era centered on control of data
elimination in each cell, but Dr. Masuoka’s approach opted for elimination of data in multiple cells in onebatch. As a result, the number of transistors used was drastically reduced and the degree of integration wassuccessfully increased. Batch elimination of data can be compared to a camera’s flash function, so “flashmemory” products appeared in 1985 and embarked on worldwide diffusion.
Presently, flash memory is essential to the IT infrastructure supporting society. It is used in autos,
household appliances, computers and smart phones, memory cards and others. The arrival of the IoT era
predicts that the 2020 worldwide digital data volume will be 44 zettabytes (ZB)*4, so integration ofrecording devices is of utmost importance. Dr. Masuoka is pursuing research into practical use of
3-dimensional flash memory that will accumulate electrons in a memory chip with a cylindricalconfiguration instead of the usual flat shape, and enable cell multi-layering.
The flash memory developed out of his research has brought about the evolution of computer performanceand significant effects on the development of science and technology. Further, mounting of non-volatile
semiconductor memory can serve equipment miniaturization and electric power conservation, andcontribute substantially to reduction in planetary power consumption. In view of these contributions toecotechnology, the Foundation has certified Dr. Masuoka as the 2018 Honda Prize laureate.
*1 Ecotechnology: a neologism combining imaging of the natural world (ecology), including civilization
as a whole, and technology. Advocated by the Honda Foundation in 1979, it seeks new technologicalconcepts required of human society in the sense of coexistence of people and technology.
*2 DRAM: An abbreviation for Dynamic Random Access Memory. It is semiconductor memory that canread and write data. Data disappear when electric power is cut off, but the manufacturing cost per
quantity is low, and it can be used as a computer main memory device.
*3 EEPROM: Abbreviation of Electrically Erasable and Programmable ROM. It is semiconductor memorythat can erase and rewrite electrically recorded content.
*4 ZB (zettabyte): The 21st power of 10 bytes. It is equivalent to 1 hundred million people each creating
10 thousand GB data (i.e., 70 thousand video data pieces combined).

For more information, contact the Honda Foundation via:
phone at +81-3-3274-5125 or fax at +81-3-3274-5103
Honda Yaesu Building, 2-6-20 Yaesu, Chuo-ku, Tokyo 104-0028, Japan
http://www.hondafoundation.jp/en/
You may also contact Honda Motor’s Corporate PR Department via phone at +81-3-5412-1512.

-2-Dr. Fujio Masuoka
Professor Emeritus, Tohoku University
Date of BirthMay 8, 1943
Biography
1966: Graduated from Department of Electronic Engineering, School ofEngineering, Tohoku University
1971: Obtained a doctorate in engineering from Department of Electronic Engineering, Graduate School ofEngineering, Tohoku University
1971: Joined Tokyo Shibaura Electric Co., Ltd. (currently Toshiba Corporation)
1994: Resigned Toshiba Corporation and appointed as a professor of Graduate School of Information
Sciences, Tohoku University
1996: Transitioned to a professor of Research Institute of Electrical Communication, Tohoku University
2004: Appointed as the director and chief technology officer of Unisantis Electronics (Japan) Ltd.
2007: Retired Tohoku University and appointed as a professor emeritus of the University
2012: Changed the corporate name from Unisantis Electronics (Japan) Ltd. to Semicon Consulting Ltd.,
continuing up to today
Major Patents, Papers, and Publications (out of 189 patents, 79 papers, and 114 Int'l conference publications)
F. Masuoka, U.S. Patent, 4, 437, 174, Mar.13, 1984 (national patent application, 1981)
F. Masuoka, U.S. Patent, 5, 245, 566, Sept. 14, 1993 (national patent application, 1987)
F. Masuoka, et al., IEEE Tech. Digest, IEDM, 1984, p.464-467
F. Masuoka, et al., IEEE Tech. Digest, IEDM, 1987, p.552-555
B. Fulford：“Unsung Hero in Japan”, Forbes Global, June 24, p.24-26 (2002)2010 Computer History Museum (CHM) (elected to the Hall of Fame)2011 Consumer Electronics of America (CEA) (elected to the Hall of Fame)
Special Issue for Dr. Masuoka, IEEE Solid-state Circuits Vol.5, No.4 (2013)“Transition of Semiconductor Memories and Their Future Prospects,” Journal of the Institute of ElectricalEngineers of Japan, Vol. 136, Issue 1, p.34-37 (2016)
Major Awards Received (out of 16 awards)
1980: Invention Award, National Commendation for Invention, Japan Institute for Promoting Invention
and Innovation
1997: IEEE, The Morris N. Liebmann Memorial Award
2000: The Main Prize of Ichimura Industrial Award, the New Technology Development Foundation
2002: International Conference on Solid State Devices and Materials, SSDM Award
2005: The Economist Innovation Awards
2007: Medal of Honor with the Purple Ribbon
2012: The Photographic Society of America (PSA), Progress Medal
2013: USA Flash Memory Summit, Lifetime Achievement Award
2013: Person of Cultural Merit
2017: Orders of the Sacred Treasure, Gold and Silver Star