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LM74610-Q1
SNOSCZ1A – JULY 2015 – REVISED OCTOBER 2015

LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller
1 Features

3 Description••

The LM74610-Q1 is a controller device that can beused with an N-Channel MOSFET in a reverse
polarity protection circuitry. It is designed to drive an
external MOSFET to emulate an ideal diode rectifier
when connected in series with a power source. A
unique advantage of this scheme is that it is notreferenced to ground and thus has Zero Iq.

1

•
•
•
•
•
•
•
•
•
•
•

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:– Exceeds HBM ESD Classification Level 2– Device CDM ESD Classification Level C4B
Maximum reverse voltage of 45 V
No Positive Voltage limitation to Anode terminal
Charge Pump Gate Driver for external N-Channel
MOSFET
Lower Power Dissipation than Schottky
Diode/PFET solutions
Low reverse leakage current
Zero IQ
Fast 2µs Response to Reverse Polarity-40°C to 125°C Operating Ambient Temperature
Can be used in OR-ing Applications
Meets CISPR25 EMI Specification
Meets Automotive ISO7637 Transient
Requirements with a suitable TVS Diode

The LM74610-Q1 controller provides a gate drive foran external N-Channel MOSFET and a fast responseinternal comparator to discharge the MOSFET Gate
in the event of reverse polarity. This fast pull-downfeature limits the amount and duration of reverse
current flow if opposite polarity is sensed. The device
design also meets CISPR25 Class 5 EMI
specifications and automotive ISO7637 transient
requirements with a suitable TVS diode.
Device Information(1)PART NUMBER

PACKAGEBODY SIZE (NOM)

LM74610-Q1

VSSOP (8)3.0 mm x 5.0 mm(1) For all available packages, see the orderable addendum atthe end of the datasheet.

2 Applications
•
•
•
•
•

ADAS
Infotainment Systems
Power Tools (Industrial)
Transmission Control Unit (TCU)
Battery OR-ing Applications
Smart Diode Configuration
Q1
VIN

S

VOUT

D

G

Gate Drive

Anode

Gate Pull Down

LM74610-Q1
VCAPH

Cathode

VCAPL

Vcap

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

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Table of Contents
1
2
3
4
5
6

Features .................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Pin Configuration and Functions ......................... 3
Specifications......................................................... 4
6.1
6.2
6.3
6.4
6.5
6.6

7

Absolute Maximum Ratings ...................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics........................................... 4
Typical Characteristics .............................................. 6

Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7

7.3 Feature Description .................................................. 7
7.4 Device Functional Modes........................................ 10

8

Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Application ................................................. 12

9 Power Supply Recommendations...................... 20
10 Layout................................................................... 21
10.1 Layout Guidelines ................................................. 21
10.2 Layout Example .................................................... 22

11 Device and Documentation Support ................. 23
11.1
11.2
11.3
11.4

Community Resources.......................................... 23
Trademarks ........................................................... 23
Electrostatic Discharge Caution ............................ 23
Glossary ................................................................ 23

12 Mechanical, Packaging, and Orderable
Information ........................................................... 23

4 Revision History
Changes from Original (July 2015) to Revision A
•

2

Page

Product Preview to Production Data Release ....................................................................................................................... 1

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5 Pin Configuration and Functions
DGK Package
8-Pin VSSOPTop View

VCAPL

1

8

CathodeGate Pull Down

2

7

VCAPH

NC

3

6

Gate Drive

Anode

4

5

NC

LM74610-Q1

Pin Functions
PIN NO.

NAME

DESCRIPTION

1

VcapL

Charge Pump Output, connect to an external charge pump capacitor

2Gate Pull Down

Connect to the gate of the external MOSFET for fast turn OFF in the case of reverse polarity

3NC

No connect. Leave floating or connect to Anode pin

4

Anode

Anode of the diode, connect to source of the external MOSFET

5

NC

No connect. Leave floating or connect to gate drive pin

6Gate Drive

Gate Drive output, Connect to the Gate of the external MOSFET

7

VcapH

Charge Pump Output, connect to an external charge pump capacitor

8

CathodeCathode of the diode, connect to Drain of the external MOSFET

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)Cathode to Anode (For a 2ms time duration) (2), (3)Cathode to Anode (Continuous)

(3)

MIN

MAX

UNIT

-3

45

V

-3

42

V

VcapH to VcapL

-0.3

7

V

Anode to VcapL

-0.3

3

V

Gate Drive, Gate Pull Down to VcapL

-0.3

7

V

Ambient Temperature (TA-MAX) (4)

-40

125

°C

Case Temperature (TC-MAX)

-40

125

°C

Storage temperature range, Tstg

-65

150

°C

(1)
(2)
(3)
(4)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
42V continuous (and 45V transients for 2ms) absmax condition from Cathode to Anode. Suitable to use with TVS SMBJ28A andSMBJ14A at the anode.
Reverse voltage rating only. There is no positive voltage limitation for the LM74610-Q1 Anode terminal.
The device performance is ensured over this Ambient Temperature range as long the Case Temperature does not exceed the MAX
value.

6.2 ESD Ratings
VALUE
Electrostatic discharge (1)V(ESD)(1)(2)

Human body model (HBM), per AEC Q100-002 (2)±4000

Charged-device model (CDM), per AEC Q100-011

±750

UNIT
V

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.

6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN

NOM

MAX

UNIT

42

V

125

°C

125

°C

Cathode To AnodeAmbient Temperature (TA-MAX)-40

Case Temperature (TC-MAX)

6.4 Thermal Information
THERMAL METRIC (1)LM74610-Q1
VSSOP 8 PINS

RθJA

Junction-to-ambient thermal resistanceRθJC(top)

Junction-to-case (top) thermal resistance

73

RθJB

Junction-to-board thermal resistance

102

ψJT

Junction-to-top characterization parameter

11

ψJB

Junction-to-board characterization parameter

100

(1)

UNIT

181
°C/W

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics
TA= 25°C unless otherwise noted. Minimum and Maximum limits are specified through test, design, validation or statisticalcorrelation. Typical values represent the most likely parametric norm at TA= 25°C and are provided for reference purpose
only. VAnode-Cathode= 0.55V for all tests. (1)(1)

4Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits
and associated test conditions, see the table of Electrical Characteristics.
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Electrical Characteristics (continued)
TA= 25°C unless otherwise noted. Minimum and Maximum limits are specified through test, design, validation or statisticalcorrelation. Typical values represent the most likely parametric norm at TA= 25°C and are provided for reference purpose
only. VAnode-Cathode= 0.55V for all tests.(1)PARAMETERTEST CONDITIONSMIN

VAnode to Cathode

Minimum Startup Voltage acrossExternal MOSFET's Body Diode

External MOSFET VGS = 0V

0.48

Vcap Threshold

Charge Pump Capacitor Drive
Thresholds

Vcap Upper Threshold

6.3

Vcap Lower Threshold

5.15

V

IGate up

Gate Drive Pull up current

VGate to Anode = 2V

8.9

9.4

µA

IGate down

Gate Drive pull down current
during forward voltage

VGate to Anode = 4V

6.35

6.8

µA

IGate pull down

Gate drive pull down current
when reverse voltage is sensed

VGate Pull Down = VAnode + 2V

160

mA

ICharge Current

Charging current for the charge
pump capacitor

VAnode to Cathode = 0.55 V

46µA

IDischarge Current

VCAP Current Consumption to
power the controller when
MOSFET is ON

Vcap = 6.6V

0.95

µA

TRecovery

Time to shut off MOSFET when
VAnode to Cathode = -20 mV
voltage is reversed (Equivalent to Cgate = 4 nF
diode reverse recovery time)

2.2

DDuty Cycle

Iload = 3 A, TA = 25°C

98%

Iload = 3 A, TA = 125°C

92%

VAnode to Cathode = -13.5 V

60
0

µA

Current into Anode pin when VAnode Cathode = 0.3V.

30

µA

ILKG

Reverse Leakage Current

Iq

Quiescent Current to GND

IAnodeCurrent into Anode pin

MAX

UNIT
V

40

V

5 (2)

µs

110 (2)µA

Limit applies over the full Operating Temperature Range TA = -40°C to +125°C.
VANODE ± VCATHODE

(2)

TYP

30 mV

0 mV
-20 mVVANODE > VCATHODE
VCATHODE > VANODEtTRECOVERYt

VGATE ± VANODE

VGATE

0V

Figure 1. Gate Shut Down Timing in the Event of Reverse Polarity

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6.6 Typical Characteristics
300

0.465
Anode to Cathode Voltage (V)V_Reverse = 13.5 V
V_Reverse = 37 V
Leakage Current (PA)

250

200

150

100

50
-40

-20

0

20

40
60
80
Temperature (qC)

100

120

0.46
0.455
0.45
0.445
0.44
0.435
-40

140

Figure 2. Reverse Leakage at Negative Voltages

0

20

40
60
80
Temperature (qC)

100

120

140
D002

Figure 3. Anode to Cathode Startup Voltage

3.25

Vcap High and Low Voltage (V)6.5

3

Trecovery (µs)

-20

D001

2.75

2.5

2.25

2
-40

-20

0

20

40
60
80
Temperature (°C)

100

120

VCAP H
VCAP L

6.25
6
5.75
5.5
5.25
5
-40

140

-20

0

20

D009

Figure 4. Reverse Recovery Time (TRecovery)

40
60
80
Temperature (qC)

100

120

140
D003

Figure 5. VcapH and VcapL Voltage Threshold

100

100

90
80

70

Duty Cycle (%)

Duty Cycle (%)

80

60
50
40
30
-40qC
25qC
85qC
125qC

20
10

40
20
-40qC
25qC
85qC
125qC

0

0

-20

0

0.1

0.2

0.3

0.4 0.5 0.6
Current (A)

0.7

0.8

0.9

1

0

1

D005

Figure 6. Duty Cycle of the Output Voltage at Startup

6

60

2

3

4
5
6
Current (A)

7

8

9

10
D004

Figure 7. Duty Cycle of the Output Voltage

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7 Detailed Description
7.1 Overview
Most systems in automotive or industrial applications require fast response reverse polarity protection at the input
stage. Schottky diodes or PFETs are typically used in most power systems to protect the load in case of negative
polarity. The disadvantage of using diodes is high voltage drop during forward conduction, which reduces theavailable voltage and increases the associated power losses. PFET solutions are inefficient for high load current
and low input voltage. These situations often occur during start-stop or cold crank. The other disadvantages of
PFET include higher Iq and higher system cost. Using an N-Channel MOSFET with a controller IC can be ahighly effective and more efficient substitute in reverse polarity protection circuitry. The ON state forward voltage
loss in a MOSFET depends upon the RDSON of the MOSFET. The power losses become substantially lower thanthe Schottky diode for the equivalent current. This solution has a small increase in complexity; however it
eliminates the need for diode heatsinks or a large thermal copper area in PCB layout for high power applications,that a diode would need.
The LM74610-Q1 is a zero Iq controller that is combined with an external N-channel MOSFET to replace a diodeor PFET reverse polarity solution in power systems. The voltage across the MOSFET source and drain isconstantly monitored by the LM74610-Q1 Anode and Cathode pins. An internal charge pump is used to provide
the GATE drive for the external MOSFET. The forward conduction is through the MOSFET 98% of the time. The
forward conduction is through the MOSFET body diode for 2% of time when energy is stored in an external
charge pump capacitor Vcap Figure 9. This stored energy is used to drive the gate of MOSFET. The voltage
drop depends on the RDSONof a particular MOSFET in use, which is significantly smaller than a PFET. The
LM74610-Q1 has no ground reference which makes it identical to a diode.

7.2 Functional Block Diagram
Input

S

OutputD

G
ANODE

GATE DRIVEGATE PULL DOWNCATHODE

VCAPL

LOGIC

VCAPH

ChargePump

Reverse Batt
Shut Off7.3 Feature Description
7.3.1 During T0
When power is initially applied, the load current (ID) will flow through the body diode of the MOSFET and produce
a voltage drop (Vf) during T0 in Figure 8. This forward voltage drop (Vf) across the body diode of the MOSFET isused to charge up the charge pump capacitor Vcap. During this time, the charge pump capacitor Vcap ischarged to a higher threshold of 6.3V (typical).

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Feature Description (continued)
VOUT
Body Diode Voltage Drop

T0

tT1t
FET is ON

VGS
FET is OFF

0V

Figure 8. Output Voltage and VGSOperation at 1A Output Current
7.3.2 During T1
Once the voltage on the capacitor reaches a higher voltage level of 6.3V (typical), the charge pump is disabled
and the MOSFET turns ON. The energy stored in the capacitor is used to provide the gate drive for the MOSFET(T1 in Figure 8). When the MOSFET is ON, it provides a low resistive path for the drain current to flow andminimizes the power dissipation associated with forward conduction. The power losses during the MOSFET ON
state depend primarily on the RDSON of the selected MOSFET and load current. At time when the capacitor
voltage reaches its lower threshold VcapL 5.15V (typical), the MOSFET gate turns OFF. The drain current ID willthen begin to flow through the body diode of the MOSFET, causing the MOSFET body diode voltage drop to
appear across Anode and Cathode pins. The charge pump circuitry is re-activated and begins charging the Vcap.
The LM74610-Q1 operation keeps the MOSFET ON at approximately 98% duty cycle (typical) regardless of theexternal charge pump capacitor value. This is the key factor to minimizing the power losses. The forward voltage
drop during this time is limited by the RDSON of the MOSFET.
7.3.3 Pin Operation
7.3.3.1 Anode and Cathode Pins
The LM74610-Q1 Anode and Cathode pins are connected to the source and drain of the external MOSFET. The
current into the Anode pin is 30 µA (typical). When power is initially applied, the load current flows through the
body diode of the external MOSFET, the voltage across Anode and Cathode pins is equal to the forward diodedrop (Vf). The minimum value of Vf required to enable the charge pump circuitry is 0.48V. Once the MOSFET isturned ON, the Anode and Cathode pins constantly sense the voltage difference across the MOSFET todetermine the magnitude and polarity of the voltage across it. When the MOSFET is on, the voltage difference
across Anode and Cathode pins depends on the RDSON and load current. If voltage difference across source anddrain of the external MOSFET becomes negative, this is sensed as a fault condition by Anode and Cathode pinsand gate is turned off by Gate Pull Down pin as shown in Figure 1. The reverse voltage threshold across Anodeand Cathode to detect the fault condition is -20 mV. The consistent sensing of voltage polarity across the
MOSFET enables the LM74610-Q1 to provide a fast response to the power source failure and limit the amountand duration of the reverse current flow.
7.3.3.2 VcapH and VcapL Pins
VcapH and VcapL are high and low voltage thresholds respectively that the LM74610-Q1 uses to detect when toturn the charge pump circuitry ON and OFF. The capacitor charging and discharging time can be correlated tothe duty cycle of the MOSFET gate. Figure 9 shows the voltage behavior across the Vcap. During the time
period T0, the capacitor is storing energy from the charge pump. The MOSFET is turned off and current flow is
only through the body diode during this time period. The conduction though body diode of the MOSFET is for a8

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Feature Description (continued)
very small period of time (2% typical) which rules out the chances of overheating the MOSFET, regardless of theoutput current. Once the capacitor voltage reaches its high threshold, the MOSFET is turned off and charge
pump circuity is deactivated until the Vcap reaches its low voltage threshold (T1). The voltage difference between
Vcap high and low threshold is typically 1.15V. The LM74610-Q1 charge pump has 46µA charging capability with
5-8MHz frequency.
VCAPH

1.1 V

VCAPL

VOUT
Body Diode Voltage Drop

T0

tT1t

Figure 9. Vcap Charging and Discarding by the Charge Pump

The Vcap current consumption is 1 µA (typical) to drive the gate. The MOSFET OFF time (T0) and ON time (T1)
can be calculated using the following expression
dV
'T C
dI
(1)
Where:• C = Vcap Capacitance• dV = 1.15V• dI = 46 µA for charging• dI = 0.95 µA for discharging
Note: Temperature dependence of these parameters – The duty cycle is dependent on temperature since thecapacitance variation over temperature has a direct correlation to the MOSFET OFF and ON periods and thefrequency. If the capacitor varies 20% the periods and the frequency will also vary by 20% so it is recommended
to use a quality X7R/COG cap and not to place the cap in close proximity to high temperature devices. The
variation of the capacitor does not have a thermal impact in the application as the duty cycle does not change.
7.3.3.3 Gate Drive Pin
When the charge pump capacitor is charged to the high voltage level of 6.3V (typ), the Gate Drive pin provides a
6.8µA (typ) of drive current. When the charge pump capacitor reaches its lower voltage threshold of 5.15V (typ),Gate is pulled down to the Anode voltage (Vin). When Anode voltage goes negative, the Gate voltage is pulled
down to Anode voltage with 160mA pull down current.
7.3.3.4 Gate Pull Down Pin
The Gate Pull Down pin is connected to the Gate Drive pin in a typical application circuit. When the controller
detects negative polarity, possibly due to failure of the input supply or voltage ripple, the Pull-Down quickly
discharges the MOSFET gate through a discharge transistor. This fast pull down react/s regardless of the Vcap
charge level. If the input supply abruptly fails, as would happen if the supply gets shorted to ground, a reverse
current will temporarily flow through the MOSFET. This reverse current can be due to parallel connected supplies
and load capacitance and is dependent upon the RDSON of the MOSFET. When the negative voltage across theAnode and Cathode pins due to reverse current reaches -20mV (typical), the LM74610-Q1 immediately reacts

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Feature Description (continued)
and discharges the MOSFET gate capacitance as shown in Figure 10 . A MOSFET with 5nF of effective gate
capacitance can be turned off by the LM74610-Q1 within 2µs (typical). The fast turnoff time minimizes thereverse current flow from MOSFET drain by opening the circuit. The reverse leakage current does not exceed
110µA for a constant 13.5V reverse voltage across Anode and Cathode pins. The reverse leakage current for a
Schottky diode is 15mA under the same voltage and temperature conditions.

Figure 10. Gate Pull Down in the Event of Reverse Polarity

7.4 Device Functional Modes
The LM74610-Q1 operates in two modes:• Body Diode Conduction Mode
The LM74610-Q1 solution works like a conventional diode during this time with higher forward voltage drop.
The power dissipation during this time can be given as:

PDissipation

VForward Drop u IDrain Current(2)

However, the current only flows through the body diode while the MOSFET gate is being charged to VGS(TH).
This conduction is only for 2% duty cycle, therefore it does not cause any thermal issues.
Body Diode ON Time•C u (VcapH VcapL)
ICharge Current(3)

The MOSFET Conduction Mode
The MOSFET is turned on during this time and current flow is only through the MOSFET. The forward voltage
drop and power losses are limited by the RDSON of the specific MOSFET used in the solution. The LM74610Q1 solution output is comprised of the MOSFET conduction mode for 98% of its duty cycle. This time period
is given by the following expression:C u (VcapH VcapL)
MOSFET ON Time
IDischarge Current(4)

7.4.1 Duty Cycle Calculation
The LM74610-Q1 has an operating duty cycle of 98% at 25 ̊C and >90% at 125 ̊C. The duty cycle doesn’t
depend on the Vcap capacitance value. However, the variation in capacitance value over temperature has direct
correlation to the switching frequency between the MOSFET and body diode. If the capacitance value decreases,
the charging and discharging time will also decrease, causing more frequent switching between body diode andthe MOSFET condition. The following expression can be used to calculate the duty cycle of the LM74610-Q1:
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Device Functional Modes (continued)
Duty Cycle (%)(MOSFET ON Time)
u 100(MOSFET ON Time Body Diode ON Time)(5)

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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information
The LM74610-Q1 is used with N-Channel MOSFET controller in a typical reverse polarity protection application.
This device is connected to the N-Channel MOSFET as shown in Figure 11 . The schematic for the typicalapplication is shown in Figure 12 where the LM74610-Q1 is used in series with a battery to drive the MOSFET
Q1. The TVS+ and TVS- are not required for the LM74610-Q1. However, they are typically used to clamp the
positive and negative voltage surges respectively. The output capacitor Cout is recommended to protect theimmediate output voltage collapse as a result of line disturbance.

8.2 Typical Application
Anode

CathodeTVS+

Voltage
Regulator

Vout

Cout

Vbatt

LM74610-Q1
TVS-

Vcap

Figure 11. Typical System Application
Q1
ANODE

CATHODE

2.2 µF

TVS+

VCAP
VBatt

Cout
1
2

Cin
100 pf
TVS-

3
4

VCAPL

CATHODE8

Vout
Voltage Regulator

GATE PULL DOWN
NC

VCAPH

GATE DRIVE

ANODE

NC

7
6
5

LM74610QDGKRQ1

GND

Figure 12. Typical Application Schematic

12

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Typical Application (continued)
8.2.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters
Table 1. Design Parameters
DESIGN PARAMETER

EXAMPLE VALUE

Input voltage range

Max VDS of the MOSFET

Output Voltage

Max VDS of the MOSFET

Maximum Negative Voltage-45V

Output Current Range

Maximum drain current

Transient Response, 3A Load Step

ΔVo = ± 5%8.2.2 Detailed Design Procedure
To begin the design process, determine the following:
8.2.2.1 Design Considerations• Input voltage range• Output current range• Body Diode forward voltage drop for the selected MOSFET• MOSFET Gate threshold voltage
8.2.2.2 Startup Voltage
The LM74610-Q1 will not initiate the charge pump operation if a closed loop system is in standby mode or thedrain current is smaller than 1mA (typical). This is due to a minimum body diode voltage requirement of theLM74610-Q1 controller. If the drain current is too small to produce a minimum voltage drop of 0.48V at 25 ͦC, thecharge pump circuitry will remain off and the MOSFET will act just like a diode. It is very important to know the
body diode voltage parameter of a MOSFET before implementing it into the Smart Diode solution. Some Nchannels MOSFETs have very low body diode voltage at higher temperature. This makes their drain current
requirement higher to achieve 0.48V across the body diode in order to initiate the LM74610-Q1 controller athigher temperatures.
8.2.2.3 Capacitor Selection
A ceramic capacitor should be placed between VcapL and VcapH. The capacitor acts as a holding tank to power
up the control circuitry when the MOSFET is on.
When the MOSFET is off, this capacitor is charged up to higher voltage threshold of ~6.3V. Once this voltage isreached, the Gate Drive of LM74610-Q1 will provide drive for the external MOSFET. When the MOSFET is ON,
the voltage across its body diode is collapsed because the forward conduction is through the MOSFET. During
this time, the capacitor acts as a supply for the Gate Drive to keep the MOSFET ON.
The capacitor voltage will gradually decay when the MOSFET is ON. Once the capacitor voltage reaches a lower
voltage threshold of 5.15V, the MOSFET is turned off and the capacitor gets recharged again for the next cycle.
A capacitor value of 220nF to 4.7uF with X7R/COG characteristic and 16V rating or higher is recommended forthis application. A higher value capacitor sets longer MOSFET ON time and OFF time; however, the duty cycle
remains at ~98% for MOSFET ON time irrespective of capacitor value.
If the Vcap value is 2.2µF, the MOSFET ON time and OFF time can be calculated using Equation 1 :MOSFET ON Time = (2.2µF x 1.15V)/0.95µA = 2.66 seconds
Body Diode ON Time = (2.2µF x 1.15V)/46µA = 55 miliseconds

(6)
(7)

The duty cycle can be calculated using Equation 5 :Duty Cycle % = 2.66sec / (2.66sec + 0.055sec) = 98%(8)

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8.2.2.4 MOSFET Selection
The important MOSFET electrical parameters are the maximum continuous Drain current ID, the maximum drainto-source voltage VDS(MAX), the gate-to-source threshold voltage VGS(TH) and the drain-to-source On resistance
RDSON. The maximum continuous drain current, ID, rating must exceed the maximum continuous load current.
The rating for the maximum current through the body diode, IS, is typically rated the same as, or slightly higher
than the drain current, but body diode current only flows for a small period while the MOSFET gate is being
charged to VGS(TH).The LM74610-Q1 can provide up to 5V VGS to drive the external MOSFET, therefore the VGS
threshold of the selected MOSFET must be ≤ 3V.
The voltage across the MOSFET's body diode must be higher than 0.48V at low current. The body diode voltage
for MOFETS typically decreases as the ambient temperature increases. This will increase the source current
requirement to achieve the minimum body diode drain-to-source voltage for the charge pump to initiate. The
maximum drain-to-source voltage, VDS(MAX), must be high enough to withstand the highest differential voltage
seen in the application. This would include any anticipated fault conditions. Although there are no positive VDS
limitation. However, it is recommended to use MOSFETS with voltage rating up to 45V for automotive
applications, since the LM74610-Q1 has a reverse voltage limit of -45V. Table 2 shows the examples ofrecommended MOSFETs to be used with the LM74610-Q1.
8.2.3 Application Curves

VIN (5 V/DIV)VOUT (5 V/DIV)

VIN (5 V/DIV)VOUT (5 V/DIV)
Gate Drive (5 V/DIV)

Gate Drive (5 V/DIV)Time (50 ms/DIV)Time (50 ms/DIV)

Figure 14. Shutdown Relative to VIN
Figure 13. Startup Relative to VIN

VIN (10 V/DIV, 12 V to -20 V)

VIN (10 V/DIV, 12 V to -20 V, 60 Hz)

VOUT (10 V/DIV, 12 V to 0 V)

VOUT (10 V/DIV, 12 V to 0 V)

Gate Drive (10 V/DIV)

Gate Drive (10 V/DIV)Time (100 µs/DIV)Time (10 ms/DIV)

Figure 15. Response to Revere polarity

14

Figure 16. Response to a 60Hz AC Input

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VIN (10 V/DIV, 12 V to -20 V)

TVS Clamping at -20 V

VOUT (5 V/DIV)

0V

Figure 17. ISO Pulse 1 Test Setup

Time (1 ms/DIV)

Figure 18. Response to ISO 1 Pulse

8.2.4 Selection of TVS Diodes in Automotive Reverse Polarity Applications
TVS diodes can be used in automotive systems for protection against transients. There are 2 types of TVS
diode, one that offers bi-directional clamping and one that is uni-directional. In the application circuit show in
Figure 11, 2 unidirectional TVS diodes are used. TVS + does the clamping for positive pulses as seen in load
dump and TVS- does the clamping for negative pulses such as seen in the ISO specs.
There are two important specs to be aware of: breakdown voltage and clamping voltage. Breakdown voltage isthe voltage at which the TVS diode goes into avalanche similar to a zener diode and is specified at a low current
value typ 1mA. Clamping voltage is the voltage the TVS diode clamps to in high current pulse situations.
In the case of an ISO 7637-2 pulse 1, the voltages go to -150V with a generator impedance of 10Ω. Thistranslates to 15A flowing through the TVS - and the voltage across the TVS would be close to its clamping
voltage. A rule of thumb with TVS diode voltage selection is that the breakdown voltage should be higher thanworst case steady state voltages seen in the system. TVS diodes are meant to clamp pulses and not meant forsteady state voltages.
The value of the TVS + is selected such that the breakdown voltage of the TVS is higher than 24V which is acommonly used battery for jump start. LM74610-Q1 does not have a positive voltage limit so the selection of thevoltage rating of TVS + is determined by the max voltage tolerated by the downstream electronics. If thedownstream parts can withstand at least 37V (suppressed load dump) then there is no need to use the TVS+. In
this case it can be replaced with a diode as seen in Figure 19. A 1A diode with a 30A surge current rating and at
least 40V reverse voltage rating is recommended. In case positive clamping voltage is desired then
SMBJ24A/SMBJ26A is recommended for TVS + as seen in Figure 11.
Anode

CathodeTVS-

Voltage
Regulator

Vout

Cout

Vbatt

LM74610-Q1
Diode

Vcap

Figure 19. Typical Application without Positive Voltage Clamping
The value of the TVS – is selected such that 2 criteria are met. The breakdown voltage of the TVS should behigher than the max reverse battery voltage which is typically 15V. The second criterion is that the abs max
rating for reverse voltage of the LM74610 is not exceeded (-45V).

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In case of reverse voltage pulses such as in ISO specs, the LM74610 turns the MOSFET off. When the MOSFET
turns off the voltage seen by the LM74610, Anode to Cathode is - (clamping voltage of TVS- (plus) the output
capacitor voltage). If the max voltage on output capacitors is 16V, then the clamping voltage of the TVS- should
not exceed, 45V – 16V = 29V.
SMBJ14A/SMBJ15A/SMBJ16A TVS diodes can be used for TVS-. The breakdown voltage of SMBJ14A is 15.6V
and SMBJ16A is 17.8V. This meets criteria one. The clamping voltage of SMBJ14A is 23.2V and SMBJ16A is26V. This meets the second criteria.
Bi-directional TVS diodes are not recommended due to their symmetrical clamping specs. SMBJ24CA has a
breakdown voltage of 26.7V and a clamping voltage of 38.9V. The breakdown voltage meets the criteria for being
higher than 24V. However the clamping voltage is 38.9V. The high clamping voltage is not an issue for the
positive pulses however for a negative ISO pulse, the abs max of the LM74610 can be violated. Voltage acrossAnode to Cathode in this case is –(38.9V + 16V) = -54.9V which violates abs max rating of -45V.
As far as power levels for TVS diodes the ‘B’ in the SMBJ stands for 600W peak power levels. This is sufficientfor ISO 7637-2 pulses and suppressed load dump case (ISO-16750-2 pulse B). For unsuppressed load dumps(ISO-16750-2 pulse A) higher power TVS diodes such as SMCJ or SMDJ may be required.
8.2.5 OR-ing Application Configuration
Basic redundant power architecture comprises of two or more voltage or power supply sources driving a single
load. In its simplest form, the OR-ing solution for redundant power supplies consists of Schottky OR-ing diodes
that protect the system against an input power supply fault condition. A diode OR-ing device provides effective
and low cost solution with few components. However, the diodes forward voltage drops affects the efficiency ofthe system permanently, since each diode in an OR-ing application spends most of its time in forward conduction
mode. These power losses increase the requirements for thermal management and allocated board space.
The LM74610-Q1 ICs combined with external N-Channel MOSFETs can be used to in OR-ing Solution as shownin Figure 20 . The source to drain voltage VDS for each MOSFET is monitors by the Anode and Cathode pins of
the LM74610-Q1. The forward conduction is through MOSFETs 98% of the time which avoids the diode forward
voltage drop. The body diode of each MOSFET only conducts the remaining 2% of the time to allow the charge
pump capacitor to be fully charged.
This is essential for an OR-ing device to fast detect the reverse current and instantly pull-down the MOSFET
gate to block the reverse current flow. An effective OR-ing solution needs to be extremely fast to limit the reverse
current amount and duration. The LM74610-Q1 devices in OR-ing configuration constantly sense the voltage
difference between Anode and Cathode pins, which are the voltage levels at the power sources (PS1, PS2) andthe common load point respectively. When either of the power sources operates at lower voltage, the LM74610Q1 detects a negative polarity and shuts down the Gate Drive through a fast Pull-Down within 2μsec (typical).

16

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PS1
Gate Drive

Pull Down

LM74610-Q1

Cathode

Anode

±

CLOAD
VCAPH

RLOAD

VCAPL

Vcap

+

PS2
Gate Drive

Pull Down

LM74610-Q1

Cathode

Anode

±

VCAPH

VCAPL

Vcap

Figure 20. Typical OR-ing Application
If one of the power supplies fails in LM74610-Q1 OR-ing controller application, the output remains uninterrupted.
This behavior is similar to diode OR-ing. Figure 21

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VOUT (5 V/DIV, 12 V)

VIN 1 (5 V/DIV, 12 V)
VIN 2 (5 V/DIV, 12 V to 0 V)

Time (1 s/DIV)

Figure 21. LM74610-Q1 OR-ing waveform
8.2.6 Design Requirements
NOTE
Startup voltage is the voltage drop is needed for the controller to turn ON. It directly
influences the Minimum output current at which the MOSFET turns ON.
Table 2. Recommended MOSFET Examples (1)Part No

Voltage(V)
Current

Drain
Current at
25C

Rdson mΩ @
4.5V

Vgs
Diode voltage @ 2A atThreshold(Package; Footprint
125C/175C
V)

CSD17313Q2
Q1

30

5

26

1.8

0.65

SON; 2 x 2

Auto

Qual

SQJ886EP

40

60

5.5

2.5

0.5

PowerPAK SO-8L; 5 x 6

Auto

SQ4184EY

40

29

5.6

2.5

0.5

SO-8; 5 x 6

Auto

Si4122DY

40

23.5

6

2.5

0.5

SO-8; 5 x 6

Auto

RS1G120MN

40

12

20.7

2.5

0.6

HSOP8; 5 x 6

Auto

RS1G300GN

40

30

2.5

2.5

0.5

HSOP8; 5 x 6

Auto

CSD18501Q5
A

40

22

3.3

2.3

0.53

SON; 5 x 6Industrial

SQD40N0614L

60

40

17

2.5

0.5

TO-252; 6 x 10

Auto

SQ4850EY

60

12

31

2.5

0.55

SO-8; 5 x 6

Auto

CSD18532Q5
B

60

23

3.3

2.2

0.53

SON;5 x 6

Industrial

IPG20N04S4
L-07A

40

20

7.2

2.2

0.48

PG-TDSON-8-10; 5 x 6

Auto

IPB057N06N

60

45

5.7

3.3

0.55

PG-TO263-3; 10 x 15

Auto

IPD50N04S4
L

40

50

7.3

2.2

0.50

PG-TO252-3-313; 6 x10

Auto

(1)
18

The LM74610-Q1 solution is not limited to the MOSFETs included in this table. It only shows examples of compatible MOSFETs.
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Table 2. Recommended MOSFET Examples(1) (continued)
Part No

Voltage(V)
Current

Drain
Current at
25C

Rdson mΩ @
4.5V

Vgs
Diode voltage @ 2A atThreshold(Package; Footprint
125C/175CV)

BUK9Y3R540E

40

100

3.8

2.1

0.48

LFPAK56; Power-SO8(SOT669); 5 x 6

Auto

IRF7478PbF1

60

7

30

3

0.55

SO-8; 5 x 6Industrial

SQJ422EP

40

75

4.3

2.5

0.50

PowerPAK SO-8L; 5 x 6

Auto

IRL1004

40

130

6.5

1

0.60

TO-220AB

Auto

AUIRL7736

40

112

2.2

3

0.65

DirectFET®; 5 x 6

Auto

Qual

Table 3. Recommended TVS Combination to meet ISO7637 Specifications (Note 4)
TVS +

TVS-

SMA6T33AY

SMBJ14A/ SMA6T15AY

SMA6T30AY

SMBJ14A/ SMA6T15AY

SMA6T28AY

SMBJ14A/ SMA6T15AY

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9 Power Supply Recommendations
While testing the LM74610-Q1 solution, it is important to use low impedance power supply which allows current
sinking. If the power supply does not allow current sinking, it would prevent the current flow in the reverse
direction in the event of reverse polarity. The MOSFET gate won't get pulled down immediately due to theabsence of reverse current flow.

20

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10 Layout10.1 Layout Guidelines
•
•
•
•
•
•
•
•

The VIN terminal is recommended to have a low-ESR ceramic bypass-capacitor. The typical recommended
bypass capacitance is a 10-μF ceramic capacitor with a X5R or X7R dielectric.
The VIN terminal must be tied to the source of the MOSFET using a thick trace or polygon.
The Anode pin of the LM74610-Q1 is connected to the Source of the MOSFET for sensing.
The Cathode pin of the LM74610-Q1 is connected to the drain of the MOSFET for sensing.
The high current path of for this solution is through the MOSFET, therefor it is important to use thick traces forsource and drain of the MOSFET.
The charge pump capacitor Vcap must be kept away from the MOSFET to lower the thermal effects on thecapacitance value.
The Gate Drive and Gate pull down pins of the LM74610-Q1 must be connected to the MOSFET gate without
using vias.
Obtaining acceptable performance with alternate layout schemes is possible, however this layout has beenshown to produce good results and is intended as a guideline.

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10.2 Layout Example

Figure 22. Layout Example

22

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SNOSCZ1A – JULY 2015 – REVISED OCTOBER 201511 Device and Documentation Support
11.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms ofUse.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools andcontact information for technical support.

11.2 Trademarks
E2E is a trademark of Texas Instruments.

11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

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18-Oct-2015

PACKAGING INFORMATION
Orderable Device

Status(1)

Package Type Package Pins Package
Drawing
Qty

Eco Plan

Lead/Ball Finish

MSL Peak Temp

(2)

(6)

(3)

Op Temp (°C)

Device Marking(4/5)

LM74610QDGKRQ1ACTIVE

VSSOP

DGK

8

2500

Green (RoHS& no Sb/Br)

CU NIPDAUAG

Level-2-260C-1 YEAR

-40 to 125

ZDSKLM74610QDGKTQ1ACTIVE

VSSOP

DGK

8

250

Green (RoHS& no Sb/Br)

CU NIPDAUAG

Level-2-260C-1 YEAR

-40 to 125

ZDSK

(1)

The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.
(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1

SamplesPACKAGE OPTION ADDENDUM

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18-Oct-2015

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION
www.ti.com

4-Nov-2015

TAPE AND REEL INFORMATION*All dimensions are nominal

DevicePackage Package Pins
Type Drawing

SPQ

Reel
Reel
A0
Diameter Width (mm)(mm) W1 (mm)LM74610QDGKRQ1

VSSOP

DGK

8

2500

330.0

12.4

LM74610QDGKTQ1

VSSOP

DGK

8

250

330.0

12.4

Pack Materials-Page 1

B0
(mm)

K0
(mm)

P1
(mm)

W
Pin1
(mm) Quadrant

5.3

3.4

1.4

8.0

12.0

Q1

5.3

3.4

1.4

8.0

12.0

Q1

PACKAGE MATERIALS INFORMATION
www.ti.com

4-Nov-2015*All dimensions are nominal

DevicePackage Type

Package Drawing

Pins

SPQ

Length (mm)Width (mm)Height (mm)LM74610QDGKRQ1

VSSOP

DGK

8

2500

366.0

364.0

50.0

LM74610QDGKTQ1

VSSOP

DGK

8

250

366.0

364.0

50.0

Pack Materials-Page 2

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