BUK9K18-40E

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
16 March 2016

Product data sheet

1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.

2. Features and benefits
•
•
•
•
•

Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

3. Applications••••

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

4. Quick reference data
Table 1.

Quick reference data

SymbolParameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

-

40

V

ID

drain current

VGS = 5 V; Tmb = 25 °C; Fig. 2

-

-

30

A

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

-

38

W

VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12

-

17.1

19.5

mΩ

-

3

-

nC

Static characteristics FET1 and FET2
RDSondrain-source on-state
resistance

Dynamic characteristics FET1 and FET2
QGD

gate-drain charge

ID = 10 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; Fig. 14

BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

5. Pinning information
Table 2.

Pinning information

Pin

Symbol Description

1

S1

source1

2

G1

gate1

3

S2

source2

4

G2

gate2

5

D2

drain2

6

D2drain2

7

D1drain18

D1drain1

Simplified outline
8

7

6

Graphic symbol
5

D1 D1

S1

D2 D2

G1

S2

G2
mbk725

1

2

3

4

LFPAK56D (SOT1205)

6. Ordering information
Table 3.

Ordering information

Type number

Package

BUK9K18-40E

Name

Description

VersionLFPAK56D

Plastic single ended surface mounted package(LFPAK56D); 8 leads

SOT1205

7. Marking
Table 4.

Marking codes

Type number

Marking code

BUK9K18-40E

91840E

8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

40

V

VDGR

drain-gate voltage

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

-

40

V

VGS

gate-source voltage

DC; Tj ≤ 175 °C

-10

10

V

-15

15

V

Pulsed; Tj ≤ 175 °C[1][2]

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

38

W

ID

drain current

VGS = 5 V; Tmb = 25 °C; Fig. 2

-

30

A

VGS = 5 V; Tmb = 100 °C; Fig. 2

-

24

A

BUK9K18-40E

Product data sheet

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
SymbolParameter

Conditions

Min

Max

Unit

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

-

124

A

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering temperature

-

260

°C

Source-drain diode FET1 and FET2
IS

source current

Tmb = 25 °C

-

30

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

124

A

-

22

mJ

Avalanche Ruggedness FET1 and FET2EDS(AL)S

non-repetitive drain-source
avalanche energy
[1]
[2]
[3]
[4]

ID = 30 A; Vsup ≤ 40 V; VGS = 5 V;

[3][4]

Tj(init) = 25 °C; Fig. 4

Accumulated Pulse duration up to 50 hours delivers zero defect ppm
Significantly longer life times are achieved by lowering Tj and or VGS.
Refer to application note AN10273 for further information
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
03aa16120003aaj625

40
ID
(A)

Pder
(%)

30

80

20
40

10

0

Fig. 1.

0

50

100

150

Tmb (°C)

Normalized total power dissipation as afunction of mounting base temperature

BUK9K18-40E

Product data sheet

0200

Fig. 2.

0

100

150

Tmb (° C)

200

Continuous drain current as a function ofmounting base temperature

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

ID(A)

003aaj627

103

Limit RDSon = VDS / ID

102

tp = 10 us
100 us

10
DC

1 ms
10 ms
100 ms

1

10-1
10-1

Fig. 3.

1

10

VDS (V)102

Safe operating area; continuous and peak drain current as a function of drain-source voltage

003aaj668

103
IAL
(A)
102

10

(1)

(2)

1

(3)

10

-1

10-2
10-3

Fig. 4.

10-2

10-1

1

tAL (ms)

10

Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and
FET2

9. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistancefrom junction tomounting baseFig. 5

-

-

3.96

K/W

BUK9K18-40E

Product data sheet

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
SymbolParameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)thermal resistancefrom junction toambient

Minimum footprint; mounted on a
printed circuit board

-

95

-

K/W

003aaj683

10
Zth(j-mb)(K/W)δ = 0.5

0.2

1

0.1
0.05
0.02

P

10-1

single shot

t

tp

T

10-2
10-6

Fig. 5.

10-5

10-4

10-3

10-2

tp
T

δ=

10-1

1

tp (s)

Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7.

Characteristics

SymbolParameter

Conditions

Min

Typ

Max

Unit

ID = 250 µA; VGS = 0 V; Tj = -55 °C

36

-

-

V

ID = 250 µA; VGS = 0 V; Tj = 25 °C

40

-

-

V

ID = 1 mA; VDS=VGS; Tj = 25 °C;

1.4

1.7

2.1

V

0.5

-

-

V

-

-

2.45

V

VDS = 40 V; VGS = 0 V; Tj = 175 °C

-

-

500

µA

VDS = 40 V; VGS = 0 V; Tj = 25 °C

-

0.02

1

µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12

-

17.1

19.5

mΩ

VGS = 5 V; ID = 10 A; Tj = 175 °C;

-

34.37

39.2

mΩ

Static characteristics FET1 and FET2
V(BR)DSS

VGS(th)drain-source
breakdown voltage
gate-source thresholdvoltageFig. 10; Fig. 11
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS=VGS; Tj = -55 °C;
Fig. 10; Fig. 11

IDSS

IGSS

RDSon

drain leakage current

gate leakage current

drain-source on-state
resistanceFig. 12; Fig. 13

BUK9K18-40E

Product data sheet

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
SymbolParameter

Conditions

Min

Typ

Max

Unit

VGS = 10 V; ID = 10 A; Tj = 25 °C;

-

13.5

16

mΩ

-

14.5

-

nC

Fig. 12Dynamic characteristics FET1 and FET2
QG(tot)total gate charge

ID = 10 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15

QGS

gate-source charge

ID = 10 A; VDS = 32 V; VGS = 10 V;

-

2

-

nC

QGD

gate-drain charge

Tj = 25 °C; Fig. 14

-

3

-

nC

Ciss

input capacitance

VDS = 25 V; VGS = 0 V; f = 1 MHz;

-

796

1061

pF

Coss

output capacitance

Tj = 25 °C; Fig. 16

-

137

164

pF

Crss

reverse transfer
capacitance

-

82

112

pF

td(on)

turn-on delay time

VDS = 32 V; RL = 3.3 Ω; VGS = 10 V;

-

4

-

ns

tr

rise timeRG(ext) = 5 Ω; Tj = 25 °C

-

4.6

-

ns

td(off)turn-off delay time

-

17.5

-

ns

tf

fall time

-

9.9

-

ns

IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17

-

0.78

1.2

V

Source-drain diode FET1 and FET2
VSD

source-drain voltagetrrreverse recovery time

IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;

-

8.3

-

ns

recovered charge

VDS = 20 V; Tj = 25 °C

-

16.2

-

nC

Qr

003aaj631

40003aaj630

90

gfs
(S)

RDSon
(mΩ )

30
60
20
30
10

0

Fig. 6.

0

10

20

30

ID (A)

040

Forward transconductance as a function ofdrain current; typical values

BUK9K18-40E

Product data sheet

Fig. 7.

05

7.5 V (V) 10
GS

Drain-source on-state resistance as a functionof gate-source voltage; typical values

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

003aaj629

40

ID
(A)

10

003aaj632

80
ID
(A)

4.5
3.5

30

60

20

40
3

10

0

2.6
VGS (V) = 2.4
01

2

VDS(V)

03

Tj = 25 °C; tp = 300 μs
Fig. 8.

Fig. 9.

Output characteristics; drain current as afunction of drain-source voltage; typical values
003aah025

3
VGS(th)(V)
2.5

Tj = 175 ° C

20

2.8

0

Tj = 25 ° C

2

4

6

VGS (V)

8

Transfer characteristics; drain current as afunction of gate-source voltage; typical values

003aah026

10-1
ID
(A)
10-2

max
2

min

10-3

typ

typ

max

1.5

10-4

min

1

10-5

0.5
0
-60

0

60

120

Tj (° C)

10-6

180

Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

BUK9K18-40E

Product data sheet

0

1

2

V GS (V)3

Fig. 11. Sub-threshold drain current as a function ofgate-source voltage

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

003aaj635

40
RDSon
(mΩ )

3

003aaj814

2.4

3.5
a

30
1.6
4.5

20

0

0.8

VGS (V) = 10

10

0

10

20

30

ID (A)

0-60

40

Tj = 25 °C; tp = 300 μs
Fig. 12. Drain-source on-state resistance as a functionof drain current; typical values

0

60

120

180

Fig. 13. Normalized drain-source on-state resistancefactor as a function of junction temperature

003aaj637

10

VDS

Tj ( °C)

VGS
(V)

ID

7.5
VDS = 32V

VGS(pl)14 V
5

VGS(th)
VGS

QGS2
QGS1

QGS

2.5

QGD

QG(tot)003aaa5080Fig. 14. Gate charge waveform definitions

0

5

10

QG (nC)

15

Fig. 15. Gate-source voltage as a function of gatecharge; typical values

BUK9K18-40E

Product data sheet

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BUK9K18-40E

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Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

003aaj638

103

003aaj639

40

C iss

IS
(A)

C
(pF)

30
C oss

102

20

Crss

Tj = 175°C

10

Tj = 25 ° C

10
10-1

1

10

VDS (V)

0

102

0

0.3

0.6

0.9 V

SD(V)

1.2

Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source (diode forward) current as a function of
as a function of drain-source voltage; typicalsource-drain (diode forward) voltage; typicalvaluesvaluesBUK9K18-40E

Product data sheet

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

11. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads

E

SOT1205

A

A

b1

c1

L1

mounting
base

D

H

D1
D2

L
1

2

3

e

b
(8x)

4
w

X

c

A

E1
E2

A1

C
θ
Lp

detail X

0

2.5

mm

5 mm

scale

Dimensions
Unit

y C

D(1) D1(1)

D2
(ref)

E(1) E1(1)

E2

4.4

0.25 0.30 4.70 4.55

3.5

5.30

1.8

0.85

4.1

0.19 0.24 4.45 4.35

3.4

4.95

1.6

0.60

A

A1

b

b1

max 1.05
nom
min 1.02

0.1

0.50

0.0

0.35

c

c1

e
1.27

H

L

L1

Lp

6.2

1.3

0.55 0.85

5.9

0.8

0.30 0.40

Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
OutlineversionReferences
IEC

JEDEC

JEITA

w

y

θ

0.25

0.1

8°
0°
sot1205_po

Europeanprojection

Issue date
14-08-21
14-10-28

SOT1205

Fig. 18. Package outline LFPAK56D (SOT1205)
BUK9K18-40E

Product data sheet

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

12. Legal information
12.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Document
status [1][2]Product
status [3]Objective[short] data
sheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] data
sheet

Qualification

This document contains data from thepreliminary specification.

Product[short] data
sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Definition

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.

12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in the
Product data sheet.

12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an information
source outside of Nexperia.

BUK9K18-40E

Product data sheet

Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

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BUK9K18-40E

Nexperia

Dual N-channel 40 V, 19.5 mΩ logic level MOSFETNo offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

12.4 Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

BUK9K18-40E

Product data sheet

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BUK9K18-40E

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Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

13. Contents
1

General description ............................................... 1

2

Features and benefits ............................................1

3

Applications ........................................................... 1

4

Quick reference data ............................................. 1

5

Pinning information ............................................... 2

6

Ordering information ............................................. 2

7

Marking ................................................................... 2

8

Limiting values .......................................................2

9

Thermal characteristics .........................................4

10

Characteristics ....................................................... 5

11

Package outline ................................................... 10

12
12.1
12.2
12.3
12.4

Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 16 March 2016

BUK9K18-40E

Product data sheet

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