Power GaN FETs

Building on
proven processes
From product concept and design to manufacturing and sales, getting the smallest
details right helps the world’s most demanding industries make quality andeﬃciency gains. Key to Nexperia’s success has been a strong commitment to meetand even go beyond the stringent quality standards our customers demand, and thisstandard level also applies to our development of power GaN FETs.
Whether that is internationally recognized standards for quality (ISO 9000), the environment (ISO 14001), health2Nexperia Power GaN FETsPower conversion eﬃciency is a key growth driver in electronics but there is often a
trade-oﬀ between density and eﬃciency.

rr

›
››››

›

›
›

600

6060

VD (V) ID (A) ID (A)

50

500

50

400

40400

404030300

30300

3030

20200

20200

2020

10100

10100

10

100

00000-10 -100-10179nC
150 nC

Current (A)40ID (A)Current (A)Voltage
(V)

500

60

I D (A) VD (V)-100-1050-102790 nC
2790nC-20 -200-20-200-20-20-30 -300

-30-300-30-30-40 -400
GaN GaN-40-400-40 Si
Si-40-50-500-50 -500
0
7.450

7.45

100

7.5150

7.55

200

7.6

250

Time (ns)Time (nS)

7.65

300

7.7-507.4 0

7.45 50

7.5

100 7.55 150

7.6

200 7.65 250

7.7

Current (A)

600

50

Voltage (V)Current (A)

60

-50
300

Time (nS)Time (ns)

GAN041-650WSB

Si MOSFET

400 V, 40 A, 800 A/μs, Qrr= 150 nC

400 V, 40 A, 800 A/μs, Q rr= 2790 nC

3

Where performancecounts
Eﬃcient power use is a key industrial challenge and a driver for innovation. Societaland control. For some applications power conversion eﬃciency and power density are
critical for market adoption. Prime examples include the trend towards automotive
electriﬁcation and the high-voltage communications and industrial infrastructure sectors.
GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost.

and4›
›
›
›

rr

100

100

100

99

90

99

90

98

80

98

80

97

70

97

70

96

60

96

Loss (W)

100

95

50

94

40

93

30

93

92

2092

91

1091

90

00500

1000

1500

2000

2500

3000

V095
94

50

L1V INVSC140

C23020Q110GND90

3500

60

Q20

Output power (W)

500

1000

1500

2000

2500

3000

Output Power (W)GaN

GaN FET totem pole PFC

Highspeed
100

100

90

99

90

80

98

80

70

97

70

60

96

60

95

50

50
40

500

1000

1500

2000

Output Power (W)
GaN

2500

3000

40

94

30

93Vac
GaN

IL

30

20

92

20

1091

10090

3500

Low
speed

GaN

Power loss (W)100

Loss (W)

Totem pole PFC

00

500

1000

1500

2000

2500

3000

3500

Output power (W)115 Vac, 60 hz eﬀ
115 Vac, 60 hz loss

4000

03500

Time230 Vac, 50 hz eﬀ
230 Vac, 50 hz loss

54000

››› High ruggedness›››rr

GAN041-650WSB – Power GaN FET 650 VRRtypR

typROSSOSSrrrr

Both products are available now
Visit www.nexperia.com/gan-fets for datasheets, samples, and design support tools

We remain focused on the development of very
high-reliability high-quality power GaN FETs, with
continued development in:• Clip-bond packaging (CCPAK)• Bare die

CCPAKAs the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality
high-robustness SMD packaging to its GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading
performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simpliﬁed
design of cascode conﬁguration to eliminate the need for complicated drivers and controls.

› Compact footprint of› <0.5 K/W thermal› Wire-bond free for› Ultra-low package› Flexible leads for› Exposed leads allow for

12 x 12 mm and low packageheight of 2.5 mm

resistanceresistance

low inductances

easy optical inspection

improved reliability

Features and beneﬁts
Innovative copper-clip technology› 3x lower inductances than industry-standard
packages for lower switching losses and EMI› Higher reliability vs wire-bond solution
Manufacturability & robustness› Flexible leads for temp cycling reliability› Flexible gull winged leads for robust
board level reliability› Compatible with SMD soldering and AOIThermal performance› Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling› 175 ºC Tj max
Two cooling options› Bottom-side cooling (CCPAK1212)› Top-side cooling (CCPAK1212i)
Plan for qualiﬁcations› AEC-Q101› MSL1› Halogen free

Target applications
Industrial› Power supplies for Titanium grade rack
mounted telecoms› Power supplies for 5G and data centres› Industrial vehicle charging› Solar (PV) inverter› AC servo drive/Frequency inverters

Automotive EV› On board charging› DC/DC converters› Traction inverters

For added ﬂexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling, andtraditional bottom-side cooling design. The ﬁrst in the portfolio of GaN SMD packages, the CCPAK1212 and CCPAK1212i hasa compact footprint of 12 x 12 mm and low package height of 2.5 mm.

7© 2021 Nexperia B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of
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nexperia.com

Date of release:
March 2021
Printed:In the Netherlands