Designing in MOSFETs for safeand reliable gate-drive operationRev. 1.0 — 31 March 2017

1

Application note

Abstract
The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The
threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst
the maximum gate-source voltage is the maximum gate-source voltage that the MOSFET
can withstand safely. VGS-max ratings vary between suppliers and between MOSFETs,
which can make it difficult to choose appropriate MOSFETs for the application. Thisapplication note aims to provide the designer with enough knowledge to appreciate thesedifferences and to select an appropriate MOSFET. We also present a new methodology
demonstrating where higher VGS-max ratings voltages may be applied for Nexperia’s
automotive grade MOSFETs.

2

Introduction
The MOSFET can be considered as a voltage-controlled switch. Applying a voltage (VGS)
across the gate and source terminals enhances the MOSFET allowing current to flow
through the MOSFET-channel between the drain and source terminals. VGS(th) is definedas the VGS for a pre-defined drain current, commonly 1 mA. Increasing the VGS further
causes the MOSFET to become fully enhanced. This allows more current to flow for agiven drain-source voltage. A fully enhanced MOSFET will also have achieved close to
its rated on state resistance RDS(on). Increasing the voltage beyond the full enhancementlevel will only result in a small reduction in RDS(on). Increasing the VGS further to a level
beyond the VGS-max will have direct implications for the MOSFET’s reliability. This could
lead to destruction of the MOSFET. The design engineer can review the MOSFET data
sheet to help ensure that the MOSFET’s reliability is not impaired and that it operates
as expected. The data sheet gives limits and guidelines, but often the design engineer
needs more detail to select a MOSFET.
This application note aims to bridge this gap. It will provide an overview of what iscurrently included in the data sheet concerning VGS ratings and it aims to answers
questions that may arise when designing in power MOSFETs.
In addition a brief introduction to the physics behind the VGS ratings and the role of thegate-oxide is included. This will provide an appreciation of the reasoning behind theratings and give confidence in the methodology employed by Nexperia to test, to qualify
and to rate the MOSFET’s gate-oxide capability.
An analysis of common Power MOSFET applications is also presented. This will
highlight the demands imposed on the MOSFET gate-oxide by the application.
Different applications have been analysed to develop a mission profile for the VGS. This
states what levels of VGS the MOSFET will be exposed to, for how long and at what
temperature. This information can then be used to select the correct MOSFET for theapplication, thus ensuring optimum and reliable operation.

Nexperia

3

Designing in MOSFETs for safe andreliable gate-drive operation

Data sheet VGS ratings
In an Nexperia data sheet there are typically two main parameters concerning the gatesource voltages. The first being the VGS threshold value or VGS(th). The second is the VGS
rating, which in this application note will be called VGS-max.
Some MOSFET data sheets include a value for the plateau (Miller) voltage. This is the
VGS voltage during switching events. Its level is poorly defined as it depends on several
interdependent electrical and environmental factors. It is not important for MOSFET
selection or circuit design and will not be further discussed in this application note.

3.1 VGS threshold voltage - VGS(th)Figure 1 shows an example of data sheet VGS(th) values; it highlights the voltage required
across the gate and source terminals to start to turn the MOSFET on. The conditions forwhich the VGS(th) is defined are specified here as the VGS necessary for 1 mA of current
to flow through the drain terminal. The Nexperia data sheet gives the VGS(th) for a rangeof temperatures. It also provides minimum and maximum values to account for process
variation.
The VGS(th) is the start of MOSFET enhancement, an increase in VGS is required toenhance the MOSFET further. Depending on whether a device is logic-level or standardlevel, a MOSFET can be considered fully-enhanced (or fully on) when the VGS is 5 V or
10 V respectively. By this point the MOSFET has achieved its rated RDS(ON).

Figure 1. VGS threshold values for an Nexperia automotive grade standard level device

Figure 2. VGS threshold values for an Nexperia automotive grade logic level device

Other differences between standard-level and logic-level devices can be observed intheir threshold-voltage values (Figures 1 and 2). It is important to consider these values
when selecting a MOSFET for an application. Two questions need to be answered tochoose an appropriate MOSFET.
1. Can the gate-driver turn the MOSFET (fully) on?
2. Can the gate-driver turn the MOSFET (fully) off?
To answer these questions, it is necessary to take the worst case conditions in eachcircumstance. In order to assess question 1 we need to know what is the highest valueof VGS(th) that the device may have. From Figures 1 and 2, we can see this occurs at
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Designing in MOSFETs for safe andreliable gate-drive operation
the lower temperature limits. For a standard level device this can be as high as 4.5 V.
If the gate-driver output is only 5 V, then a standard level device may not be suitable.
This is because the MOSFET is only beginning to turn on and therefore may not operatecorrectly in the application. A logic level MOSFET with a maximum VGS(th) of ≤ 2.45 V
would be more suitable.
It is important to note that VGS(th) has a Negative Temperature Coefficient (NTC): as
the junction temperature increases, the VGS for a given ID decreases. If channel current
flows because the VGS is not low enough to drive the MOSFET fully OFF, ID will increase
as die temperature rises. This thermal runaway effect can ultimately cause MOSFET
destruction.
Conversely, the designer must consider the upper temperature limit for turning
the MOSFET off. At 175 °C a logic level device may conduct channel current at a
VGS ≥ 0.5 V. The gate-driver may have a minimum output voltage of 0.6 V. This is not low
enough to ensure that a logic level MOSFET is turned fully off. At VGS = 0.6 V channel
current could still flow. In this situation it is better to select a standard level device.

3.2 The maximum VGS ratings - VGS-max
VGS-max is the absolute maximum gate-source voltage that can be applied to the device.
These values illustrated in Figures 3 and 4 conform to the International ElectrotechnicalCommission’s IEC60134 document -“Rating systems for electronic tubes and valves
and analogous semiconductor devices”. Referencing paragraph 4 of IEC60134 titled“Absolute maximum rating system” it states [1]:"Absolute maximum ratings are limiting values of operating and environmental conditions
applicable to any electronic device of a specified type as defined by its published data,
which should not be exceeded under the worst probable conditions. These values arechosen by the device manufacturer to provide acceptable serviceability of the device,taking no responsibility for equipment variations, environmental variations, and theeffects of changes in operating conditions due to variations in the characteristics of thedevice under consideration and of all other electronic devices in the equipment."
This defines the worst case conditions and highlights the responsibility of the designer toensure that the absolute maximum value is never exceeded. It does not explicitly place
any obligations on the manufacturer in terms of long term reliability.

Figure 3. Maximum VGS rating for a Nexperia automotive grade standard level device

Notice there is an additional pulsed value limited to an accumulated duration of up to 50 hours.
Figure 4. Maximum VGS rating for a Nexperia automotive grade logic level device.

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4

Designing in MOSFETs for safe andreliable gate-drive operation

Life testing
For automotive MOSFETs, AEC-Q101 qualification is required. AEC-Q101 is a list ofendurance tests the MOSFET must pass. Each test takes a sample of MOSFETs andplaces them under various electrical stresses and temperatures. The sample size is aminimum of 77 MOSFETs; each endurance test is repeated 3 times on a different sample
of 77 MOSFETs to represent a different process batch. Surviving the endurance tests
grants the tested product type Q101 accreditation, allowing the MOSFET to be usedin automotive applications [2]. This can be found on all Nexperia automotive qualifed
MOSFET data sheets (Figure 5).

Figure 5. Front page of a typical Nexperia automotive data sheet, showing the MOSFET isautomotive by highlighting that it is Q101 compliant

To qualify the VGS-max ratings for Q101 the devices undergo a specified life-testprocedure. The devices are placed in a chamber at the maximum rated temperature(Tjmax) with gate biased at 100% of the data sheet maximum voltage rating for 1000
hours. These tests are performed by Nexperia to ensure that the data sheet ratings of
VGS-max are within specification.
However, life-testing alone is inherently incapable of determining the actual capability ofa MOSFET in terms of expected failed parts per million (ppm). In order to satisfy AECQ101 criteria no sample devices during the Q101 bias tests should fail. It is possible toextrapolate a failure rate from such data, but the maximum confidence it can provide isin the order of 11000 ppm (based on zero fails in a population of 240 devices under test
and using a confidence interval of 95%). With this level of confidence it is not trivial todetermine what to specify as the maximum voltage rating. Especially when in addition,
Nexeria’s own requirements target a sub 1 ppm defectivity level.
To achieve sub-ppm levels Nexperia has developed its own additional testing
methodology. Using this, Nexperia can confidently rate the devices to satisfy the AECQ101 criteria, while also achieving sub 1 ppm defectivity rates (3). In order to understandthis methodology an explanation of the role of a MOSFET’s gate-oxide is required and isdetailed below.

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5

Designing in MOSFETs for safe andreliable gate-drive operation

The Gate-oxide
The methodology to determine and qualify the maximum VGS rating of a device is based
upon characterisation of the gate-oxide. This is the layer of oxide that insulates the gatepolysilicon from the source of the MOSFET and is critical to its operation. Figure 6 shows
the location of the gate-oxide in the MOSFET.

Figure 6. Cross-section of a power MOSFET at approximately 25,000 magnification showing
where the MOSFET channel forms and the location of the gate-oxide. The gate-oxide ispresent both sides of the trench and a channel forms next to both oxides. Current flows
vertically from Drain to Source through the MOSFET channel.

When designing power MOSFETs, there are two conflicting constraints with respect tothe gate-oxide thickness. Achieving a low RDS(on) at a low applied level of VGS requires athin gate-oxide, conversely withstanding high maximum VGS requires a thick gate-oxide.
In most cases, both requirements can be met and gate bias life testing can be performed
at 100 % of the absolute maximum rating. However, there are some instances where thisis not possible. Logic level devices are designed to provide a guaranteed RDS(on) at VGS= 5 V. This implies a need for a gate-oxide that is thinner than for a standard level device.
Consequently a logic-level gate-oxide is not capable of achieving the same maximum
VGS-max rating as a standard-level gate-oxide. For Nexperia’s automotive MOSFETs, thisis typically 10 V logic-level and 20 V for standard-level devices at the maximum rated
temperature, typically 175 °C.
However, caution should be exercised when comparing other manufacturers’ data
sheets. The VGS-max rating is not always given at the maximum rated temperature;
instead it is often given for 25 °C. The rating given for a temperature of 25 °C may behigher than one given for 175 °C. This will make that MOSFET appear more capable
on first review. Because MOSFET gate-oxide reliability decreases with increasing
temperature, Nexperia’s data sheets show the capability of the MOSFET at maximum
rated junction temperature.
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Designing in MOSFETs for safe andreliable gate-drive operation
Exceeding the VGS-max rating for the gate-oxide does not mean the device will
immediately fail in the application. Applying a VGS to a MOSFET will develop an electricfield across the internal gate-oxide (EOX). The oxide electric field strength is a function ofoxide thickness (TOX) and VGS.

If the oxide electric field strength reaches a sufficiently high level, the gate-oxide
insulation will break down and will be destroyed. However, for electric field strengths
below this critical value the gate-oxide may degrade over time and ultimately fail. The
rate at which this occurs depends on both the operating-temperature and the strength ofthe electric field within the gate-oxide. Expected oxide life-time decreases with increases
in either temperature or oxide electric-field stress.
Gate-oxides need to be rated to survive for operating periods of not less than 10 years.
Testing for 10 years to assess the reliability of the gate-oxide is not practical. Nexperia
performs life tests under accelerated conditions to achieve quicker test results. For
assessing the gate-oxide, Nexperia places a group of MOSFETs with known gateoxide thickness under high temperatures and high oxide field strength. The MOSFETs
will therefore degrade much quicker than can be expected in the application. The
MOSFETs are monitored until the point of failure, which is observed as a low impedance
measurement between the gate and source terminals. This is termed Time DependantDielectric Breakdown (TDDB).
Nexperia uses the test data from TDDB to correlate to other operating-temperaturesand oxide field-strengths to determine the capability of the oxide in actual application
operating conditions. This is applicable to MOSFETs with different gate-oxide
thicknesses because the testing characterises oxide field-strength, not VGS.
A gate-oxide production process aims to create a gate-oxide of consistent thickness
throughout manufacture. However, in any real fabrication process variation will occur.
This means the VGS rating needs to be applicable to the MOSFET with the thinnest gateoxide that leaves the factory. Production screens are in place that set a lower limit, whichcorresponds to the MOSFET with the thinnest gate-oxide. Using this value of gate-oxide
thickness and the characterisation data from the accelerated TDDB tests, this MOSFET
can now have its oxide rated for VGS-max and temperature for a given expected operatinglife.
For automotive MOSFET the operating requirement is outlined within AEC Q-101;
1000 hours at VGS-max and maximum temperature. Taking this profile into account, andknowing the thinnest oxide that can be supplied, Nexperia can confidently place VGS-max
ratings in the data sheet.
Again, for further detail on the mechanics of gate-oxide wear out and Nexperia’s
methodology towards rating its gate-oxides please refer to [3].

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6

Designing in MOSFETs for safe andreliable gate-drive operation

Alternative operating profiles
The mission or operating-profile of a MOSFET in an actual application is rarely at thedata sheet maximum temperature and at the maximum VGS for 1000 hours as dictated by
AEC-Q101. This combination is formulated as a compromise to allow realistic life-testingtimes that would protect automotive applications. The ultimate rating of a MOSFET VGSmax that meets AEC-Q101 may not meet the application requirements. For example theapplication may require 12 V VGS but this exceeds the MOSFET of choice’s 10 V rating,at first pass this MOSFET cannot be used in the application. However, if the operating
profile of the application is outlined with greater detail it may be that the 12 V rating isrequired for temperatures less than 175 °C and for a cumulative lifetime duration of lessthan 1000 hours. Here the application criteria can be compared with the true capability ofthe oxide and therefore be confidently selected for the application.
This application note assess several common MOSFET topologies in order to provide anunderstanding of VGS behaviour. From this it is possible to generate an estimate for what
VGS will be applied to the MOSFET and for how long; a VGS profile. Using the VGS profile
along with operating-voltage profiles and temperature profiles a full mission profile can becreated. An example is shown in Table 1. The mission profile can be used to assess the
MOSFET’s suitability for the application against the TDDB data.
The first set of analyses presented considers steady state stress on the gate-oxide
due to a constant gate-source bias from either an external gate-driver or as a result of
the steady state voltages that appear on the gate and source terminals of a MOSFET.
Further analysis attempts to estimate the contribution to gate stress from transient gatesource voltages. This could result from capacitive coupling through the Miller capacitanceor conduction through the MOSFET body diode. Both require detailed analysis of theapplication to verify compatibility with the MOSFET features.

Table 1. Example MOSFET mission profile, showing the time spent in hours at a particular VGS and MOSFET
junction temperature

Time (hours)
VGS =Tj = -40 °C

Tj = 25 °C

Tj = 80 °C

Tj = 105 °C

Tj = 125 °C

-5 V

1

5

10

1

0

2V

10

50

100

10

2

5V

1000

2500

5000

50

10

10 V

100

200

300

100

5

20 V

2

10

5

2

1

6.1 Application assessments
This section assesses several common topologies featuring MOSFETs and focuses on
the VGS behaviour. This information will help to produce the mission profile as shown in
Table 1.

6.1.1 Single MOSFETs
Starting with the three application topologies shown in Figure 7. Figure 7a and 7b can beconsidered similar in behaviour as they are both driven gate to source. However, Figure
7c shows the MOSFET being driven gate to ground. It is possible to drive the MOSFET
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Designing in MOSFETs for safe andreliable gate-drive operationin this manner by ensuring the gate voltage is higher than whatever voltage is currently
at the source terminal. However, it is highly recommended not to do so as will become
apparent throughout the discussion.
a).

b).
MOSFETR
VDD

VGS

MOSFET
VGS

VDD

R

c).
MOSFET
VG

VDD
R

aaa-026549

Figure 7. a) Low side MOSFET b) High side MOSFET driven Gate to Source c) High side
MOSFET driven gate to ground

In Figure 7c, when a VG is applied, first assumptions may be that the voltage acrossthe load resistor will be close to VDD due to the low on-state resistance of a MOSFET
compared to the load. However, the VGS of the MOSFET is VGS = VG – VS, where VS isthe voltage developed across the load in this example. This means that as VG rises so,will VS thus reducing the overall VGS across the MOSFET. The result is a MOSFET thatis not fully enhanced and therefore taking a significant portion of the VDD across its drain
and source terminals. The MOSFET is now dissipating a considerable amount of power
and operating in linear mode, which may have thermal runaway implications. In addition,
the load may not behave as expected due to it no longer having the full VDD across it.
In Figure 7a the MOSFET source and gate-driver supply are both grounded andtherefore provides a true VGS supply. Likewise in Figure 7b, now the gate-drive is able tofloat above the source voltage and apply the full drive to the gate-source terminals of the
MOSFET. Both the circuits in Figure 7a and 7b the MOSFETs are easily turned fully on
and can achieve the low RDS(ON). This allows the full VDD to be applied across the loadand ensures correct operation of the application.

6.1.2 Half, Full and Three-Phase Bridges
Other application examples include half bridges and by extension full bridges and threephase bridges which can be found in DC-to-DC convertors and motor drives. Here, in
any individual leg two MOSFETs are placed in series. When the MOSFETs are off theresistance across the drain-source terminals is not infinite and leakage paths exist. For
simplification, these can be treated as resistances across the drain-source terminals.
Referencing Figure 8 it can be seen that the VGS on the high side (HS) MOSFET can be-VDD/2. The time the MOSFET VGS is at VDD/2 V may be significant due to this occurring
whenever the application is off and connected to the supply voltage. This will needconsidering in the mission profile and the MOSFET will need to be specified to meet thisrequirement.

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Designing in MOSFETs for safe andreliable gate-drive operation

VDD
HS MOSFET VGS:HS MOSFET
VG

VDD/2

VGS = VG - VS
VGS = 0 - VDD/2
VGS = - VDD/2

LS MOSFET
VGS
aaa-026550

Figure 8. Half bridge MOSFET configuration showing leakage paths and potential issues if
driving High Side MOSFET with respect to ground.

When the MOSFETs are driven with respect to ground the required gate-drive needs to
be at least the required VGS for the MOSFET summed with the maximum voltage at the
MOSFET’s source terminal. For example, an automotive application typically uses a leadacid battery. Potentially the application could see 18 V from the battery and therefore thesame voltage may appear on the source terminal of the high side MOSFET. This means
to drive a typical SL MOSFET a gate voltage of 28 V (18 V + 10 V) with respect to groundis required to ensure the MOSFET is fully enhanced. Now the gate-drive is fixed at 28 V.
However, the battery voltage may be as low as 6 V. This means the VGS will be 22 V (28V - 6 V). For a SL MOSFET this is outside its safe operating limits and has the potential
to reduce its reliability in the application.
Within half bridges the extremes of the VGS have been considered but the source
voltage of the high side MOSFET does not depend solely upon the battery-voltage: loadconditions which are variable with temperature and supply-voltage result in not knowing
accurately what the source-voltage will be during considerable periods of operation of theapplication. This makes it very difficult to assess the VGS requirement of the MOSFET
when driving them with respect to ground. It is preferred and advisable to have the gatedriver referenced to the source of the MOSFET and not ground. Now, when the source
voltage changes the gate-drive will be referencing this and the VGS will be controlled.
However, even when driving the MOSFET with respect to source there are still times
when the VGS is not fully dictated by the gate-driver. An assessment of transient analysis
is required next.
All the applications discussed and their VGS behaviour have been assessed understeady-state conditions, the next few paragraphs take into consideration the dynamic
behaviour whilst the MOSFET is switching or commutating currents. In the example
figures already shown the gate-drivers have been idealised as perfect voltage sources.
However, all gate-drivers will have output impedances and drive current limitations
adding to the complexity of transient behaviour for the application. In addition to thisthe PCB layout will be a factor, with track impedances contributing to the application
behaviour. It is beyond the scope of this application note to discuss best layout practices
beyond noting that gate-drivers should be placed as close as possible to the MOSFET
it is driving. Some of these issues have been addressed in application note AN11599 Using power MOSFETs in parallel.
The transient operation of the half bridge is now reviewed, here solely the case where
the MOSFET is driven gate to source is considered. The load is inductive, representing
half bridges (DCDC convertors for example) and three-phase bridges (Brushless DC
motors for example). The full operation of these applications is not considered but in
each, during the switching of the MOSFETs, the considerations to the gate-drive aresimilar.
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Designing in MOSFETs for safe andreliable gate-drive operation
Before describing the application behaviour, it is important to note that all MOSFETs
have parasitic capacitances that couple each of the terminals, gate, drain and source(Figure 9). They are CGS, CGD and CDS and exist as part of the MOSFET structure,
playing a critical role in the transient behaviour of MOSFETs and therefore theapplication.

CGD
MOSFET
CDS
CGS

aaa-026551

Figure 9. Internal parasitic MOSFET capacitances

In half-bridges during an example transient event, one MOSFET is turned off and thesecond is turned on, this causes the switch node voltage to rise and fall. The switch
node is where the source of the high side and the drain of the low side MOSFETs areconnected. The dV/dt on the switch node can couple through the CGD of a MOSFET
and charge or discharge that MOSFET’s CGS, appearing as VGS. Whether the VGS ispositive or negative depends on the sign of the dV/dt. It is the function of the driver tocompensate for this change in VGS by charging/discharging the VGS to the set level.
How effective the gate-driver is at this depends on a couple of factors, the rate of thedV/dt and how well the driver is coupled to the gate and source (how much impedanceis between them). Again, being aware that the total impedance is a sum combinationof package, resistance and inductances, trace parasitics and intentionally placedcomponents (which have even more parasitics). This behaviour is shown in Figure 9.
The consequences of this gate-bounce are biasing of the gate for a cumulative time
which needs to be considered in any mission profile and worse, potentially causing crossconduction where both MOSFETs are on simultaneously.
i=C

dV
dt

18

MOSFET

VGS

RG

CGS

CDS
VGS

Voltage (V)

16
CGD

L

MOSFET

14

VGS “bounces
back upduring the dV/dt

dV/dt across the highside FET causes acapacitive current tocharge CGD

12
10
8

HS VGS (V)6

LS VGS (V)4

Switch Node (V)20Some of this charge is sunk by the driver but some will
charge CGS and VGS will increase. Both MOSFETs canpotentially be on at the same time causing a shortcircuit and current to shoot through the MOSFETs

0

2

4

6

Time (µs)

8aaa-026552

Figure 10. Dynamic behaviour of a MOSFET half bridge

6.1.3 High side MOSFETs with Inductive loads
Other applications where VGS behaviour may not be as first expected, are when driving
inductive-loads. Take again the examples in Figure 7 but now replace the restive-loadwith an inductive one. The difference in driving methodology, that is with respect toAN90001

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Designing in MOSFETs for safe andreliable gate-drive operation
ground or to the source, could result in either the MOSFET operating in linear modeor entering avalanche respectively. Consider now the situation where the gate-drive isreferenced to ground. Also assume there is sufficient drive on the gate to compensate
for an increase in source voltage, thus allowing the MOSFET to be fully enhanced.
When the MOSFET is turned on current will increase through the inductor, and energy
will be stored in its magnetic field. Then the gate-driver is turned off, the inductor starts
to demagnetise and produces a back-EMF in order to maintain current flow. As one
end of the inductor is grounded this back-EMF appears as a negative voltage on thesource. The voltage will continue to decrease until the VGS is great enough such that
the MOSFET is partially turned on, maintaining the inductive current flow. Here the
MOSFET is in linear mode, the VGS is somewhere between off and fully on and the
VDS is significant; remembering that the source is now negative. See Figure 11 for an
illustration.
Current (A)

15
5
0

VDD

MOSFET

30
VG (V)Gate

L

VS (V)

Inductor
Current

060Time (µs)

80

20

40

60

Time (µs)

80

20

60

Time (µs)

8060Time (µs) 80
aaa-026553

40

Whilst the inductor
discharges the VGS is ~3 V

8
4
0

40

Inductor forces source
voltage negative

0

12
VGS (V)

0

10

-10

20

Gate drive
turns off

10

20

Source

0

20
0

VG

Inductor
Current

10

0

20

40

Figure 11. Circuit and waveforms showing the VGS behaviour whilst driving an inductive
load and the gate of the MOSFET is driven gate to ground

Taking the previous example of driving an inductive load but with the gate being driven
with respect to the source, the behaviour is similar until the MOSFET is turned off. Again
the Vs will go negative until current flow is maintained, however the source is tied firmly
to the gate by the driver which is operating at 0 V. No matter how negative the source
goes (within operational limits) the MOSFET will stay off. Instead, the VS will continue
to decrease and therefore the VDS will continue to rise. Ultimately the VDS will reach the
breakdown voltage of the MOSFET’s internal body diode and avalanche (Figure 12). As
with linear mode the power dissipation is considerable due to there being voltage andcurrent present in the MOSFET, but avalanche is a preferable method of absorbing theinductive energy. Compared to linear mode, avalanche operation is better at sharing thispower dissipation across the silicon die. Further information avalanche can be found in a
MOSFET’s data sheet and in more detail in application note AN10273 - Power MOSFET
single-shot and repetitive avalanche ruggedness rating.

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Designing in MOSFETs for safe andreliable gate-drive operation

VDD

Current (A)Nexperia

15
10
0

MOSFET

VG (V)

30

Gate

L

5

0

8

15

Time (µs)

20

10

15

Time (µs)

20

The VDS will be VDD - VS.
This will be the breakdown
voltage of the MOSFET

5

10

15

Time (µs)

20

10

15

Time (µs) 20
aaa-026554

Whilst the inductor discharges
the VGS is held by the driver at 0 V
and the MOSFET avalanches

4
0

10

The inductor forcessource voltage negative-5

12
VGS (V)

0

15
-25

5

Gate-drive turns off

1035
VS (V)

Inductor
Current020
0SourceVGS

Inductor Current

5

0

5

Figure 12. Circuit and waveforms showing the VGS behaviour whilst driving an inductive
load and the gate of the MOSFET is driven Gate to Source

6.1.4 Motor Loads
One final application to be consider is driving motors with a single high side FET as infigure. Again the designer is recommended to drive the MOSFET with respect to groundto ensure full control of the MOSFET and application behaviour. Driving with respect toground and the source voltage will be near VDD due to motor back EMF; all the previous
considerations to driving respect to ground apply.

6.2 Application assessment summary
This application note has summarised some common application behaviours and theirimpact on the MOSFET’s VGS. The application note has shown that driving a MOSFET
with respect to ground causes numerous issues and difficulties. These include operatingin linear mode and not knowing what the VGS may be at any point in time. This makes it
difficult to formulate a mission profile to select the correct MOSFET. However, driving thegate with respect to source does not remove all of the issues; there are transient events
that can induce positive or negative voltages on the VGS that are not fully controlled by
the gate-driver. We are still short, however, from producing the mission profile to ensure
the correct selection of a MOSFET. The correct MOSFET should not be over-specified
and should still operate reliably in the application for its intended life. We now need tocreate a mission profile.

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Creating a mission profile
An example mission profile is shown in Table 1, it is a distribution of VGS voltages at a
range of temperatures and for how long. However, before generating a profile, several
pieces of information need to be gathered. These include but are not limited to:• How long the application is in operation– On and Off times– Possible fault conditions• The distribution of operating temperatures• The distribution of supply voltages
Along with an understanding of the application as outlined is the previous sections, thisinformation can be used to create a mission profile. The mission profile can be assed
against the TDDB data for a given MOSFET, thus determining the MOSFET’s suitability
for the application.

7.1 Example – Full H-bridge motor drive
An example automotive application is brushed Direct Current (DC) motors such as
windscreen wiper motors or seat control motors. For this worked example the MOSFETs
are driven with respect to their source terminals and not to ground.
The first part of the exercise is to gather information on how long the application will be
operating for. This information can then be translated into how long the MOSFETs are on
for and therefore how long they will have a VGS applied. In this instance it is common for
the Original Equipment Manufacturer (OEM) to stipulate the usage profile of the system
and it may look like (Table 2).
Table 2. Number of motor operations and the total time spent in operation

Operations

Total operation time
at 0.5 s per actuation(hours)180,000

25

Other times when there may be a voltage present at the gate of the MOSFET is whenthe engine is off but the electronics are on. In the case of the motor, the two high side
MOSFETs may be switched on to brake the motor. This time will add cumulatively to themission profile (Table 3).
Table 3. Battery voltage whilst the engine is off and the time spent at this voltage whilst the electronic systems areconnected to the battery

VGS (V)Time (hours)

12.5

6,000

Table 3 provides the first piece of information required to build our VGS profile. We needto convert the information in Table 2 into the same. To do so, we need to know the
VGS the MOSFET will be driven at. The VGS may be set at 10 V by a power supply or
alternatively the MOSFET may be driven directly by the battery voltage. The battery
voltage will have its own distribution (Table 4). Using Table 2 and Table 4 we get Table 5.

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Table 4. Battery voltage distribution of the life time of the application

Battery Voltage (V)Distribution

14.5

77%

16

15%

17

5%

18

3%

Table 5. VGS profile based on battery voltage distribution and application operation time, including the VGS applied
to the MOSFET whilst the engine is off

VGS (V)Time (hours)

12.5

6000

14.5

19.25

16.0

3.75

17.0

1.25

18.0

0.75

20.0

0.00825

Table 5 is now a VGS profile, it shows the time spent at each VGS value. However, it
is missing the temperature profile to make it into a full mission profile to be assessedagainst the TDDB data. To generate a temperature profile the OEM and the application
designer need to work together. Remember that the MOSFET may be operating a little
hotter than its ambient (due to self-heating) so engineering margin may need to be
added. An example is shown in Table 6.
Table 6. Ambient and junction temperature distribution of the expected life time of the application
The junction temperature is arbitrarily increased by 50 °C, this can be changed based on engineering judgment or
calculation when better informed of the systems operational parameters.

Tamb (°C)

Tj (°C)

Distribution

-40

10

6%

23

73

20%

40

90

65%

75

125

8%

80

130

1%

Table 5 contains the VGS values, and Table 6 has the temperature distribution. These two
together contain the information to make Table 7, the full VGS profile. For example, for
6% of the time the MOSFET junction temperature is at 10 °C. By multiplying the hours at
each VGS (from Table 5) by 6% the Tj = 10 °C column in Table 7 is populated. It may be
the case that the higher VGS voltages only occur at the lower temperatures. The profile in
Table 7 will need to be updated to reflect this but can only be done so by the application
designer working with the OEM.

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Table 7. Full mission profile showing the time in hours for a given VGS voltage and MOSFET junction temperature

Time at VGS and Temperature (hours)
VGS (V)Tj = 10 °C

Tj = °C

Tj = 90 °C

Tj = 125 °C

Tj = 130 °C

12.5

360

1200

3900

480

60

14.5

1.155

3.85

12.5125

1.54

0.1925

16

0.225

0.75

2.43750.3

0.0375

17

0.075

0.25

0.81250.1

0.0125

18

0.045

0.15

0.48750.06

0.0075The profile in Table 7 shows that for a time the MOSFET will see a VGS of 18 V atelevated temperatures. Using solely the datasheet ratings a logic-level MOSFET’s VGSmax rating of 15 V would seem to exclude it from use in this application. However, working
with Nexperia to compare the profile to the logic level MOSFETs TDDB data it can beshown that the MOSFET is more than capable of operating reliably in the application.
This is because the time spent at these conditions is short.
Once the design engineer has generated a VGS mission profile they are encourage tocontact their local Nexperia representative to receive support. Working with Nexperia,
the profile can be assessed against the TDDB data and a suitable MOSFET can then besuggested.

8

Summary
The gate-source lifetime and the gate-source turn-on voltage are highly dependent on
temperature so one needs to be careful in comparing datasheets from different suppliers
where the stated temperature conditions for the gate-source voltages are different.
For devices that do not see the maximum gate-voltage at maximum temperature
throughout their intended life, Nexperia has a methodology to provide a better
assessment of the required gate-oxide rating for such an application. This would often
allow better performance in other parameters without compromising reliability in theapplication.
This does require the so-called mission profile of the MOSFET in the application, as
described in this application note.

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Abbreviations

Table 8. Abbreviations

SymbolDescription

MOSFET

metal-oxide-semiconductor field-effect transistor

VGS(th)gate-source threshold voltage

VGS

gate-source voltage

VDS

drain-source voltage

Tjjunction temperatureVSsource to ground voltage

VG

gate to ground voltage

VDD

application supply voltage

CGS

gate-source capacitanceCGD

gate-drain capacitance

AEC

Automotive Electronics Council

HS MOSFET

High side MOSFETLS MOSFET

Low side MOSFET

SN

Switch node

IEC

International Electrotechnical Commission

TDDB

Time Dependant Dielectric Breakdown

OEM

Original Equipment Manufacturer

DC

Direct current

TOX

Oxide thickness

EOX

Oxide electric field strength

10 References
1. Rating systems for electronic tubes and valves and analogous semiconductor
devices. IEC. IEC 60134:1961.
2. Failure Mechanism Based Stress Test Qualification For Discrete Semiconductors.
AEC. Vol. Rev D. AEC - Q101.
3. A methodology for projecting SiO2 thick gate oxide reliability on trench power
MOSFETs and its application on MOSFETs VGS rating. Efthymiou, E, Rutter, P andWhiteley, P. 2015, Microelectronics Reliability.

Revision history
Revision history

Revision
numberDate

Description

1.0

2017-03-31

Initial version of the document

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TablesTab. 1.
Tab. 2.
Tab. 3.

Tab. 4.

Example MOSFET mission profile, showing
the time spent in hours at a particular VGS
and MOSFET junction temperature ...................7
Number of motor operations and the total
time spent in operation ....................................13
Battery voltage whilst the engine is off andthe time spent at this voltage whilst theelectronic systems are connected to thebattery ..............................................................13
Battery voltage distribution of the life time of
the application ................................................. 14

Tab. 5.

Tab. 6.
Tab. 7.
Tab. 8.

VGS profile based on battery voltage
distribution and application operation time,
including the VGS applied to the MOSFET
whilst the engine is off .................................... 14
Ambient
andjunction
temperature
distribution of the expected life time of theapplication ....................................................... 14
Full mission profile showing the time inhours for a given VGS voltage and MOSFET
junction temperature ........................................15
Abbreviations ...................................................16

FiguresFig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.

Fig. 6.

VGS threshold values for an Nexperia
automotive grade standard level device ............ 2
VGS threshold values for an Nexperia
automotive grade logic level device .................. 2
Maximum VGS rating for a Nexperia
automotive grade standard level device ............ 3
Maximum VGS rating for a Nexperia
automotive grade logic level device. ................. 3
Front page of a typical Nexperia automotive
data sheet, showing the MOSFET isautomotive by highlighting that it is Q101
compliant ........................................................... 4
Cross-section of a power MOSFET
at approximately 25,000 magnification
showing where the MOSFET channel forms
and the location of the gate-oxide. The gateoxide is present both sides of the trench anda channel forms next to both oxides. Current

AN90001

Application noteFig. 7.
Fig. 8.
Fig. 9.
Fig. 10.
Fig. 11.

Fig. 12.

flows vertically from Drain to Source throughthe MOSFET channel. .......................................5a) Low side MOSFET b) High side MOSFET
driven Gate to Source c) High side MOSFET
driven gate to ground ........................................8
Half bridge MOSFET configuration showing
leakage paths and potential issues if driving
High Side MOSFET with respect to ground. ......9Internal parasitic MOSFET capacitances ........ 10
Dynamic behaviour of a MOSFET half
bridge .............................................................. 10
Circuit and waveforms showing the VGS
behaviour whilst driving an inductive load
and the gate of the MOSFET is driven gate
to ground ......................................................... 11
Circuit and waveforms showing the VGS
behaviour whilst driving an inductive load
and the gate of the MOSFET is driven Gate
to Source .........................................................12

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Contents
1
2
3
3.1
3.2
4
5
6
6.1
6.1.1
6.1.2
6.1.3
6.1.4
6.2
7
7.1
8
9
10

Abstract ................................................................1
Introduction ......................................................... 1
Data sheet VGS ratings ...................................... 2
VGS threshold voltage - VGS(th) ...................... 2
The maximum VGS ratings - VGS-max ............. 3
Life testing ...........................................................4
The Gate-oxide .................................................... 5
Alternative operating profiles ............................ 7
Application assessments ................................... 7
Single MOSFETs ............................................... 7
Half, Full and Three-Phase Bridges ...................8High side MOSFETs with Inductive loads ........ 10
Motor Loads .....................................................12
Application assessment summary ................... 12Creating a mission profile ................................13
Example – Full H-bridge motor drive ............... 13
Summary ............................................................ 15
Abbreviations .................................................... 16
References ......................................................... 16

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section 'Legal information'.

© Nexperia B.V. 2017.

All rights reserved.

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For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 31 March 2017
Document identifier: AN90001