NX3008NBK

30 V, 400 mA N-channel Trench MOSFET
5 November 2022

Product data sheet

1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits
•
•
•
•
•

Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified

3. Applications••••

Relay driver
High-speed line driverLow-side load switch
Switching circuits

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

-

-

30

V

VGS

gate-source voltage

-8

-

8

V

ID

drain current

-

-

400

mA

-

1

1.4

Ω

VGS = 4.5 V; Tamb = 25 °C[1]Static characteristics
RDSon
[1]

drain-source on-state
resistance

VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
2Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .

NX3008NBK

Nexperia

30 V, 400 mA N-channel Trench MOSFET

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription
1

G

gate

2

S

source

3

D

drain

Simplified outline

Graphic symbol
D

3
G

1

2

SOT23

S
017aaa255

6. Ordering information
Table 3. Ordering information
Type number
Package
NX3008NBK

Name

Description

VersionSOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm
pitch; 2.9 mm x 1.3 mm x 1 mm body

SOT23

7. Marking
Table 4. Marking codes
Type number

Marking code[1]NX3008NBK

KS%

[1]

% = placeholder for manufacturing site code

NX3008NBK

Product data sheet

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30 V, 400 mA N-channel Trench MOSFET

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

-

30

V

VGS

gate-source voltage

-8

8

V

ID

drain current

VGS = 4.5 V; Tamb = 25 °C

[1]

-

400

mA

VGS = 4.5 V; Tamb = 100 °C

[1]

-

250

mA

-

1.6

A

[2]

-

350

mW

[1]

-

420

mW

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

Ptot

total power dissipation

Tamb = 25 °C

-

1140

mW

Tj

junction temperature

Tsp = 25 °C

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diodeIS

source current

Tamb = 25 °C

[1]

-

400

mA

HBM

[3]

-

2000

V

ESD maximum rating
VESD
[1]
[2]
[3]

electrostatic discharge
voltage2

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
001aao121

120
Pder
(%)

Ider
(%)

80

80

40

40

0
-75

Fig. 1.

001aao122

120

-25

25

75

125

Tj (°C)

Normalized total power dissipation as afunction of junction temperature

NX3008NBK

Product data sheet

0
-75

175

Fig. 2.

-25

75

125

Tj (°C)175

Normalized continuous drain current as afunction of junction temperature

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Nexperia

30 V, 400 mA N-channel Trench MOSFET
001aao266

10
lD
(A)
1
(1)

10-1

(2)
(3)
(4)

10-2
10-1

(5)

1

10

VDS (V)102

IDM is a single pulse(1) tp = 1 ms
(2) tp = 10 ms(3) tp = 100 ms(4) DC; Tsp = 25 °C2(5) DC; Tamb = 25 °C; 1 cm drain mounting pad
Fig. 3.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage

NX3008NBK

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30 V, 400 mA N-channel Trench MOSFET

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-a)thermal resistance from in free air
junction to ambient

Rth(j-sp)[1][2]

Conditions

Min

Typ

Max

Unit

[1]

-

310

370

K/W

[2]

-

260

300

K/W

-

-

115

K/W

thermal resistance fromjunction to solder point

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
017aaa015

103
duty cycle = 1

Zth(j-a)
(K/W)

0.5
102

0.25
0.1

10

0.75
0.33
0.2
0.05
0.02
0.01

0

1
10- 3

10- 2

10- 1

1

10

102

tp (s)

103

FR4 PCB, standard footprint
Fig. 4.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016

103
Zth(j-a)(K/W)

duty cycle = 1

102

10

0.5
0.25

0.75
0.33
0.2

0.1

0.05

0

0.02
0.01

1
10- 3

10- 2

10- 1

FR4 PCB, mounting pad for drain 1 cm
Fig. 5.

1

10

2

102

tp (s)

103

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NX3008NBK

Product data sheet

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Nexperia

30 V, 400 mA N-channel Trench MOSFET

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

Static characteristics
V(BR)DSS

drain-source
breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

30

-

-

V

VGSth

gate-source thresholdvoltage

ID = 250 µA; VDS=VGS; Tj = 25 °C

0.6

0.9

1.1

V

IDSS

drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 25 °C

-

-

1

µA

VDS = 30 V; VGS = 0 V; Tj = 150 °C

-

-

10

µA

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

0.2

1

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

0.2

1

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

10

-

nA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

10

-

nA

VGS = 2.5 V; VDS = 0 V; Tj = 25 °C

-

1

-

nA

VGS = -2.5 V; VDS = 0 V; Tj = 25 °C

-

1

-

nA

VGS = 4.5 V; ID = 350 mA; Tj = 25 °C

-

1

1.4

Ω

VGS = 4.5 V; ID = 350 mA; Tj = 150 °C

-

1.8

2.5

Ω

VGS = 2.5 V; ID = 200 mA; Tj = 25 °C

-

1.4

2.1

Ω

VGS = 1.8 V; ID = 10 mA; Tj = 25 °C

-

2

2.8

Ω

VDS = 10 V; ID = 350 mA; Tj = 25 °C

-

310

-

mS

VDS = 15 V; ID = 400 mA; VGS = 4.5 V;
Tj = 25 °C

-

0.52

0.68

nC

-

0.17

-

nC

-

0.08

-

nC

-

34

50

pF

-

6.5

-

pF

-

2.2

-

pF

-

15

30

ns

-

11

-

ns

IGSS

RDSon

gfs

gate leakage current

drain-source on-state
resistanceforwardtransconductance

Dynamic characteristics
QG(tot)total gate charge

QGSgate-source charge

QGD

gate-drain charge

Cissinput capacitanceCossoutput capacitanceCrssreverse transfer
capacitancetd(on)

turn-on delay timetrrise timetd(off)turn-off delay time

-

69

138

ns

tf

fall time

-

19

-

ns

0.47

0.85

1.2

V

VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C

VDS = 20 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C

Source-drain diodeVSD

source-drain voltage

NX3008NBK

Product data sheet

IS = 350 mA; VGS = 0 V; Tj = 25 °C

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Nexperia

30 V, 400 mA N-channel Trench MOSFET
001aao267

0.4
ID
(A)

2.5 V

001aao268

10-3

4.5 V

ID
(A)

2V

0.3

(1)

(2)

(3)

10-4
1.75 V

0.2

10-5
1.5 V

0.1

VGS = 1.25 V
0.0

0

1

2

3

VDS (V)

10-6
0.0

4

Tj = 25 °C
Fig. 6.

Fig. 7.

RDS (on)(Ω)

001aao269

(1)

(2)

1.0

VGS (V)

1.5

Tj = 25 °C; VDS = 5 V(1) minimum values(2) typical values(3) maximum values

Output characteristics: drain current as afunction of drain-source voltage; typical values

6

0.5

Sub-threshold drain current as a function ofgate-source voltage
001aao270

6
RDS (on)
(Ω)

(3)

4

4

(4)

2

2

(1)

(5)

(2)

(6)

0
0.0

0.1

0.2

0.3

ID (A)

0

0.4

Tj = 25 °C(1) VGS = 1.5 V(2) VGS = 1.75 V(3) VGS = 2.0 V(4) VGS = 2.25 V(5) VGS = 2.5 V(6) VGS = 4.5 V
Fig. 8.

0

1

2

3

4

VGS (V)5

ID = 400 mA(1) Tj = 150 °C(2) Tj = 25 °C
Fig. 9.

Drain-source on-state resistance as a functionof gate-source voltage; typical values

Drain-source on-state resistance as a functionof drain current; typical values

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30 V, 400 mA N-channel Trench MOSFET
001aao271

0.4
ID
(A)

001aao272

2.0
a

(1)

0.3

(2)

1.5

0.2

1.0

0.1

0.5

0.0

0

1

2

VGS (V)

0.0
-60

3

VDS > ID x RDSon(1) Tj = 25 °C(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values
001aao273

1.5

0

60

120

001aao274

(1)

C
(pF)

(1)

180

Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues102

VGS(th)(V)

Tj (°C)

1.0
(2)

0.5

10

(2)

(3)
(3)

0.0
-60

0

60

120

Tj (°C)

1
10-1

180

ID = 0.25 mA; VDS = VGS(1) maximum values(2) typical values(3) minimum values

Product data sheet

10

VDS (V)102

f = 1 MHz; VGS = 0 V(1)Ciss(2)Coss(3)CrssFig. 12. Gate-source threshold voltage as a function ofjunction temperature

NX3008NBK

1Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesAll information provided in this document is subject to legal disclaimers.

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NX3008NBK

Nexperia

30 V, 400 mA N-channel Trench MOSFET
001aao275

5
VGS
(V)

VDS

4

ID

3

VGS(pl)2
VGS(th)
VGS

1

0
0.0

QGS2
QGS1

0.2

0.4

QG (nC)

QGS

0.6

QGD
QG(tot)ID = 0.4 A; VDS = 15 V; Tamb = 25 °C

003aaa508

Fig. 15. Gate charge waveform definitions

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

001aao276

0.4
IS
(A)
0.3

(1)

(2)

0.2

0.1

0.0
0.0

0.4

0.8

VSD (V)

1.2

VGS = 0 V
(1) Tj = 150 °C(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values

NX3008NBK

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30 V, 400 mA N-channel Trench MOSFET

11. Test informationP

t2

duty cycle δ =

t1
t2

t1

t

006aaa812

Fig. 17. Duty cycle definition

Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

NX3008NBK

Product data sheet

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30 V, 400 mA N-channel Trench MOSFET

12. Package outline
Plastic surface-mounted package; 3 leads

SOT23

B

D

A

E

X

HE

v

A

3

Q
A
A1
1

c

2
e1

bp

w

B

Lp

e

detail X

0

1

2 mm

scale

Dimensions (mm are the original dimensions)
Unit
mm

max
nom
min

A

A1

bp

c

D

E

1.1

0.1

0.48 0.15

3.0

1.4

0.38 0.09

2.8

1.2

0.9

e

e1

1.9

0.95

HE

Lp

Q

2.5

0.45 0.55

2.1

0.15 0.45

v

w

0.2

0.1

sot023_po

OutlineversionReferences
IEC

SOT23

JEDEC

JEITA

Europeanprojection

Issue date
14-06-19
14-09-22

TO-236AB

Fig. 18. Package outline SOT23

NX3008NBK

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30 V, 400 mA N-channel Trench MOSFET

13. Soldering
3.3
2.9
1.9

solder lands

3solder resist2

1.7

solder paste
occupied area

0.6
(3×)

0.7
(3×)

Dimensions in mm

0.5
(3×)
0.6
(3×)
1

sot023_fr

Fig. 19. Reflow soldering footprint for SOT23
2.2
1.2
(2×)

1.4
(2×)
solder lands
4.6

solder resist

2.6

occupied area
Dimensions in mm

1.4

preferred transport direction during soldering
2.8
4.5

sot023_fw

Fig. 20. Wave soldering footprint for SOT23

NX3008NBK

Product data sheet

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30 V, 400 mA N-channel Trench MOSFET

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

NX3008NBK v.2

20221105

Product data sheet-

NX3008NBK v.1

Modifications:•

NX3008NBK v.1

20110802

NX3008NBK

Product data sheet

Chapter "Characteristics": typo correction, VSD axis scaling for Fig. 16 revised
Product data sheet-

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30 V, 400 mA N-channel Trench MOSFET
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

15. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outsideof Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for thecustomer’s applications and products using Nexperia products in order toavoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement isconcluded only the terms and conditions of the respective agreement shallapply. Nexperia hereby expressly objects to applying the customer’s generalterms and conditions with regard to the purchase of Nexperia products bycustomer.
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia producthas been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems or

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30 V, 400 mA N-channel Trench MOSFET

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Test information........................................................ 10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14© Nexperia B.V. 2022. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 5 November 2022

NX3008NBK

Product data sheet

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