BUK7J1R4-40HN-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
8 August 2023

Product data sheet

1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in an enhanced LFPAK56E package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.

2. Features and benefits
•
•

•

•

Fully automotive qualified to AEC-Q101:• 175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:• Reduced cell pitch enables enhanced power density and efficiency with lower RDSon insame footprint• Improved SOA and avalanche capability compared to standard TrenchMOS• Tight VGS(th) limits enable easy paralleling of MOSFETs
LFPAK Gull Wing leads:• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages• Visual (AOI) soldering inspection, no need for expensive x-ray equipment• Easy solder wetting for good mechanical solder joint
LFPAK copper clip technology:• Improved reliability, with reduced Rth and RDSon• Increases maximum current capability and improved current spreading

3. Applications
•
•
•
•
•

12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

IDdrain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

Ptot

total power dissipation

Min

Typ

Max

Unit

-

-

40

V

-

-

190

A

Tmb = 25 °C; Fig. 1

-

-

395

W

VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11

0.74

1.06

1.4

mΩ

[1]

Static characteristics
RDSon

drain-source on-state
resistanceBUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
SymbolParameter

Conditions

Min

Typ

Max

Unit

ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14

-

13

27

nC

nC

Dynamic characteristics
QGD

gate-drain charge

Source-drain diodeQr

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V

-

39

-

S

softness factor

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C

-

0.7

-

[1]

190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription

Simplified outline

1

S

source2Ssource3Ssource

4

G

gate

mb

D

mounting base; connected
to drainGraphic symbol

D

G

1

2

3

4

mbb076SLFPAK56E; PowerSO8 (SOT1023)

6. Ordering information
Table 3. Ordering information
Type number
Package
Name

Description

VersionBUK7J1R4-40H

LFPAK56E;
Power-SO8

plastic, single-ended surface-mounted package(LFPAK56); 4 leads; 1.27 mm pitch

SOT1023BUK7J1R4-40H/A002

LFPAK56E;
Power-SO8

plastic, single-ended surface-mounted package(LFPAK56); 4 leads; 1.27 mm pitch

SOT1023

7. Marking
Table 4. Marking codes
Type number

Marking code

BUK7J1R4-40H

71H440E

BUK7J1R4-40H/A002

71H440E

BUK7J1R4-40H

Product data sheet

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

40

V

VGS

gate-source voltage

DC; Tj ≤ 175 °C

-10

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

395

W

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

[1]

-

190

A

VGS = 10 V; Tmb = 100 °C; Fig. 2

[1]

-

190

A

-

600

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

-

145

A

-

600

A

-

154

mJ

Source-drain diodeIS

source current

Tmb = 25 °C

[2]

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

Avalanche ruggedness
EDS(AL)S

[1]
[2]
[3]
[4]

non-repetitive drainID = 190 A; Vsup ≤ 40 V; RGS = 50 Ω;source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4[3] [4]

190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
145A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03na19

120
Pder
(%)

aaa-025649

400
ID
(A)
300

80

200
(1)

40

100

0

Fig. 1.

0

50

100

150

Tmb (°C)

0200

Fig. 2.

Product data sheet

25

50

75

100

125

150 175
Tmb (°C)

200

VGS ≥ 10 V
(1) 190A continuous current has been successfully
demonstrated during application tests. Practicallythe current will be limited by PCB, thermal designand operating temperature.

Normalized total power dissipation as afunction of mounting base temperature

BUK7J1R4-40H0Continuous drain current as a function ofmounting base temperature

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

ID(A)

aaa-026108

103

tp = 10 us

Limit RDSon = VDS / ID

100 us

102
DC
10

1 ms
10 ms
100 ms

1

10-1
10-1

1

10

VDS (V)102

Tmb = 25 °C; IDM is a single pulse
Fig. 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage
IAL(A)

aaa-025650

103

102

(1)

(2)

10

(3)

1

10-1
10-3

10-2

10-1

1
tAL (ms)

10(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4.

Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-mb)

Conditions

thermal resistance from Fig. 5junction to mountingbase

BUK7J1R4-40H

Product data sheet

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8 August 2023

Min

Typ

Max

Unit

-

0.29

0.38

K/W

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
aaa-026110

1
Zth(j-mb)(K/W)δ = 0.5
10-1

0.2
0.1
0.05

10-2

P

0.02

δ=

tp
T

single shot
t

tp
10-3
10-6

Fig. 5.

10-5

10-4

10-3

10-2

T

10-1

tp (s)

1

Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

ID = 250 µA; VGS = 0 V; Tj = 25 °C

40

42

-

V

ID = 250 µA; VGS = 0 V; Tj = -40 °C

-

39.6

-

V

ID = 250 µA; VGS = 0 V; Tj = -55 °C

36

38.9

-

V

ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
Fig. 10

2.4

3

3.6

V

ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9

-

-

4.3

V

ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9

1

-

-

V

VDS = 40 V; VGS = 0 V; Tj = 25 °C

-

0.1

1

µA

VDS = 16 V; VGS = 0 V; Tj = 125 °C

-

2.4

10

µA

VDS = 40 V; VGS = 0 V; Tj = 175 °C

-

240

500

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11

0.74

1.06

1.4

mΩ

VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12

1.05

1.57

2.23

mΩ

VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 12

1.16

1.74

2.45

mΩ

VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12

1.46

2.18

3.05

mΩ

f = 1 MHz; Tj = 25 °C

0.4

1

2.5

Ω

ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14

-

73

103

nC

-

21

32

nC

-

13

27

nC

Static characteristics
V(BR)DSS

VGS(th)

IDSS

IGSS
RDSon

RG

drain-source
breakdown voltage

gate-source thresholdvoltagedrain leakage current

gate leakage current
drain-source on-state
resistancegate resistance

Dynamic characteristics
QG(tot)total gate charge

QGSgate-source charge

QGD

gate-drain charge

BUK7J1R4-40H

Product data sheet

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
SymbolParameter

Conditions

Min

Typ

Max

Unit

Ciss

input capacitance

-

5436

7610

pF

Coss

output capacitance

VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15

-

1314

1840

pF

Crss

reverse transfer
capacitance

-

238

524

pF

td(on)

turn-on delay time

-

19

-

ns

tr

rise time

-

17

-

ns

td(off)turn-off delay time

-

43

-

ns

tf

fall time

-

21

-

ns

VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω

Source-drain diodeVSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.8

1.2

V

trr

reverse recovery time

-

37

-

ns

Qr

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V

-

39

-

nC

S

softness factor

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C

-

0.7

-

IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C

-

0.56

-

aaa-026805

300
ID
(A)

RDSon
(mΩ)

10 V
VGS = 5.5 V

240

aaa-026112

5

4
5V

180

3

120

2
4.5 V

60

1
4V

0

Fig. 6.

01

2

3
VDS (V)

0

4

0

4

8

12

16
VGS (V)20

Tj = 25 °C

Tj = 25 °C; ID = 25 A

Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values

Drain-source on-state resistance as a functionof gate-source voltage; typical values

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BUK7J1R4-40H

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N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
aaa-026113

360
ID
(A)
300

VGS(th)(V)

aaa-018139

5

4
Max

240
3

Typ

180
2
120

Min

0

1

25°C

60

175°C
Tj = -55°C
0

1

2

3

4

5
6
VGS (V)

0-60

7

VDS = 8 V
Fig. 8.

-30

0

30

60

90

120 150
Tj (°C)180

ID = 1 mA ; VDS = VGSTransfer characteristics; drain current as afunction of gate-source voltage; typical values
aaa-018138

10-1
ID
(A)

Fig. 9.

Gate-source threshold voltage as a function ofjunction temperature
aaa-026114

10
RDSon
(mΩ)

10-2

VGS = 4.5 V

5V

8
Min

10-3

Typ

Max

6

10-4

4

10-5

2

5.5 V

6V
8V
10 V

10-6

0

1

2

3

4
VGS (V)05

Tj = 25 °C; VDS = 5V

Product data sheet

50

100

150

200

250
ID (A)

300

Tj = 25 °C

Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

BUK7J1R4-40H

0Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56Eaaaa-026897

2.4

VGS
(V)

2

aaa-026115

10

8

1.6
6
VDS = 14 V

1.2

32 V

4
0.8
2

0.4
0
-60

-30

0

30

60

90

120 150
Tj (°C)

0

180

0

10

20

30

40

50

60
70
QG (nC)80

Tj = 25 °C; ID = 25 A
Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature

Fig. 13. Gate-source voltage as a function of gatecharge; typical values
aaa-026116

104

C
(pF)

VDS

Ciss

ID

Coss

103
VGS(pl)Crss102

VGS(th)
VGS
Q GS2
QGS1
Q GS

10
10-1

QGD
QG(tot)BUK7J1R4-40H

Product data sheet

10

VDS (V)102

VGS = 0 V; f = 1 MHz

003aaa508

Fig. 14. Gate charge waveform definitions

1

Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesAll information provided in this document is subject to legal disclaimers.

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
aaa-026117

300
IS
(A)
240

180

120

60

0

175°C

0

0.2

0.4

0.6

Tj = 25°C

0.8

1VSD (V)

1.2

VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values

BUK7J1R4-40H

Product data sheet

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BUK7J1R4-40H

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N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

11. Package outline
Plastic single-ended surface-mounted package (LFPAK56E); 4 leads

A

E

SOT1023

E1

A

b1

b2
(3x)

c1

mounting
base
H

D1

D

L
1

2

3

4
b

e

A1

w

A

X

c

C
θ
Lp

detail X

0

2.5

A

A1

b

b1

b2

c

c1

D(1) D1(1) E(1) E1(1)max 1.10 0.15 0.50 4.41
0.25 0.30 4.70 4.45 5.30
nom
0.85
min 0.95 0.00 0.35 3.62
0.19 0.24 4.45
4.95

mm

5 mm

scale

Dimensions
Unit

y C

3.7
3.5

e
1.27

H

L

Lp

6.2

1.3

0.85

5.9

0.8

0.40

w

y

0.25

0.1

Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
Outlineversion

JEDEC

8°
0°
sot1023_po

References
IEC

θ

JEITA

Europeanprojection

Issue date
13-03-05
17-07-31

SOT1023

Fig. 17. Package outline LFPAK56E; Power-SO8 (SOT1023)

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BUK7J1R4-40H

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N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

12. Soldering
4.7
4.2

0.25
(2×)

0.9
(3×)

0.25
(2×)

0.6
(4×)

3.45
0.6
(3×)

2

3.5

2.55

0.25
(2×)
SR opening =Cu + 0.075

1.1
2.15
3.3

SP opening =Cu - 0.050

0.7
(4×)

1.27
3.81

solder lands

solder paste
125 µm stencil

solder resist

occupied area

sot1023_fr

Fig. 18. Reflow soldering footprint for LFPAK56E; Power-SO8 (SOT1023)

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

13. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
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Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
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Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Product data sheet

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8 August 2023

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BUK7J1R4-40H

Nexperia

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12© Nexperia B.V. 2023. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 8 August 2023

BUK7J1R4-40H

Product data sheet

All information provided in this document is subject to legal disclaimers.

8 August 2023

© Nexperia B.V. 2023. All rights reserved

13 / 13