PSMNR56-25YLE

N-channel 25 V, 0.63 mOhm, ASFET for hotswap withenhanced SOA in LFPAK56E
10 November 2022

Product data sheet

1. General description
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package
optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications.

2. Features and benefits
•
•
•
•
•
•

Fully optimized Safe Operating Area (SOA) for superior linear mode operation
2
Optimized for low RDSon / low I R conduction losses
LFPAK56E package for applications that demand the highest performance and reliability in a2
30 mm footprint
Low leakage <1 µA at 25 °C
Copper-clip for low parasitic inductance and resistanceHigh reliability LFPAK package, qualified to 175 °C

3. Applications
•
•
•
•
•

Hot swap in 12 V - 20 V applications
e-FuseDC switch
Load switch
Battery protection

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

-

25

V

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

-

320

A

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

-

333

W

Tj

junction temperature

-55

-

175

°C

VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10

-

0.5

0.63

mΩ

VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 10

-

0.65

0.92

mΩ

ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 12; Fig. 13

2.7

15

30

nC

24

54

89

nC

[1]

Static characteristics
RDSon

drain-source on-state
resistance

Dynamic characteristics
QGD

gate-drain charge

QG(tot)total gate charge

PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E
SymbolParameter

Conditions

Min

Typ

Max

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Tj = 25 °C; Fig. 16

-

0.92

-

Unit

Source-drain diodeS[1]

softness factor

320 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription

Simplified outline

1

S

source2Ssource3Ssource

4

G

gate

mb

D

mounting base; connected
to drainGraphic symbol

D

G

1

2

3

mbb0764S

LFPAK56E; PowerSO8 (SOT1023)

6. Ordering information
Table 3. Ordering information
Type number
Package
PSMNR56-25YLE

Name

Description

VersionLFPAK56E;
Power-SO8

plastic, single-ended surface-mounted package(LFPAK56); 4 leads; 1.27 mm pitch

SOT1023

7. Marking
Table 4. Marking codes
Type number

Marking code

PSMNR56-25YLE

E56L25J

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Tj = 25 °C unless otherwise stated.
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

25

V

VDGR

drain-gate voltage

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

-

25

V

VGS

gate-source voltage

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

333

W

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

320

A

VGS = 10 V; Tmb = 100 °C; Fig. 2

-

320

A

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

-

2068

A

IDM

PSMNR56-25YLE

Product data sheet

peak drain current

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E
SymbolParameter

Tstg

Conditions

Min

Max

Unit

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering
temperature

-

260

°C

Source-drain diodeIS

source current

Tmb = 25 °C

-

320

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

2068

A

Avalanche ruggedness
EDS(AL)S

non-repetitive drainID = 25 A; Vsup ≤ 25 V; RGS = 50 Ω;source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 18 ms

[2]

-

7.2

J

IAS

non-repetitive avalanche Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω

[2]

-

190

A

[1]
[2]

320 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Protected by 100% test.
03aa16

120
Pder
(%)

aaa-035642

550
ID
(A)
440

80

330

(1)

220
40

110

0

Fig. 1.

0

50

100

150

Tmb (°C)

0200

Fig. 2.

Product data sheet

25

50

75

100

125

150 175
Tmb (°C)

200

VGS ≥ 10 V
(1) 320 A continuous current has been successfully
demonstrated during application tests. Practicallythe current will be limited by PCB, thermal designand operating temperature.

Normalized total power dissipation as afunction of mounting base temperature

PSMNR56-25YLE

0Continuous drain current as a function ofmounting base temperature

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

ID(A)

aaa-035643

104

Limit RDSon = VDS / ID

103

tp = 10 µs
100 µs

102

1 ms
10 ms
100 msDC

10
10 µs 100 µs
110-1

1 ms 10 ms
100 ms

1

DC

10

102

VDS (V)Tmb = 25 °C (solid black line);Tmb = 125 °C (red dashed line); IDM is a single pulse
Fig. 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance from Fig. 4junction to mounting
base

Conditions

-

0.35

0.45

K/W

Rth(j-a)thermal resistance from Fig. 5junction to ambient
Fig. 6

-

42

-

K/W

-

85

-

K/W

aaa-034976

1
Zth(j-mb)(K/W)δ = 0.5
10-1 0.2
0.1
0.05
10-2

0.02

P

single shot

δ=

tp
10-3
10-6

Fig. 4.

10-5

10-4

10-3

10-2

10-1

tp
T

t
T
tp (s)

1

Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMNR56-25YLE

Product data sheet

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

aaa-027933

aaa-027935

Copper area 25.4 mm square; 70 μm thick on FR4
board
Fig. 5.

PCB layout for thermal resistance from junction
to ambient

70 μm thick copper on FR4 board
Fig. 6.

PCB layout with minimum footprint for thermal
resistance from junction to ambient

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

drain-source
breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

25

-

-

V

ID = 250 µA; VGS = 0 V; Tj = -55 °C

22.5

-

-

V

VGS(th)gate-source thresholdvoltage

ID = 2 mA; VDS=VGS; Tj = 25 °C

1.2

1.84

2.2

V

ΔVGS(th)/ΔT

gate-source thresholdvoltage variation withtemperature

25 °C ≤ Tj ≤ 150 °C

-

-4

-

mV/K

IDSS

drain leakage current

VDS = 20 V; VGS = 0 V; Tj = 25 °C

-

-

1

µA

VDS = 20 V; VGS = 0 V; Tj = 125 °C

-

11.8

-

µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

VGS = -16 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10

-

0.5

0.63

mΩ

VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 11

-

-

1.1

mΩ

VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 10

-

0.65

0.92

mΩ

VGS = 7 V; ID = 25 A; Tj = 150 °C;
Fig. 11

-

-

1.6

mΩ

f = 1 MHz; Tj = 25 °C

1.4

3.6

9

Ω

ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 12; Fig. 13

24

54

89

nC

ID = 25 A; VDS = 12 V; VGS = 10 V;
Tj = 25 °C; Fig. 12; Fig. 13

51

115

190

nC

ID = 0 A; VDS = 0 V; VGS = 10 V;
Tj = 25 °C

-

59

-

nC

Static characteristics
V(BR)DSS

IGSS
RDSon

RG

gate leakage current
drain-source on-state
resistancegate resistance

Dynamic characteristics
QG(tot)total gate charge

PSMNR56-25YLE

Product data sheet

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E
SymbolParameter

Conditions

Min

Typ

Max

Unit

QGS

gate-source charge

6

23

44

nC

QGS(th)pre-threshold gatesource charge

ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 12; Fig. 13

3.2

12

23

nC

QGS(th-pl)

post-threshold gatesource charge

3

11

21

nC

QGD

gate-drain charge

2.7

15

30

nC

VGS(pl)gate-source plateau
voltage

ID = 25 A; VDS = 12 V; Tj = 25 °C;
Fig. 12; Fig. 13

-

3.2

-

V

Ciss

input capacitance

4855

8091

12137 pF

Coss

output capacitance

VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14

1865

3109

4664

pF

Crss

reverse transfer
capacitance

183

677

1625

pF

td(on)

turn-on delay time

-

65

-

ns

tr

rise time

-

150

-

ns

td(off)turn-off delay time

-

51

-

ns

tf

fall time

Qoss

output charge

VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω; Tj = 25 °C

-

64

-

ns

VGS = 0 V; VDS = 12 V; f = 1 MHz;
Tj = 25 °C

-

57

-

nC

Source-drain diodeVSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15

-

0.77

1

V

trr

reverse recovery time

43

-

ns

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Tj = 25 °C; Fig. 16
[1]

-

Qr

-

44

-

nC

ta

reverse recovery rise
time

-

22.2

-

ns

tb

reverse recovery fall
time

-

20.5

-

ns

S

softness factor

-

0.92

-

[1]

includes capacitive recovery
aaa-035644

400
ID
(A)

6V
7V

300

aaa-035645

3
RDSon
(mΩ)
2.5

10 V

2
5V

200

1.5

VGS = 4.5 V

1

100
3.5 V

0.5

3V
0

Fig. 7.

01

2

3
VDS (V)

0

4

0

2

4

6

8

10

12
14
VGS (V)16

Tj = 25 °C

Tj = 25 °C; ID = 25 A

Output characteristics; drain current as a
Fig. 8.
function of drain-source voltage; typical values

Drain-source on-state resistance as a functionof gate-source voltage; typical values

PSMNR56-25YLE

Product data sheet

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E
aaa-035646

400
ID
(A)

aaa-035647

20
3.5 V 4 V
RDSon
(mΩ)

VGS = 5 V

4.5 V

16

300

12
200
8
100
150°C

0

0

1

2

3

4

5

6
7
VGS (V)0

8

VDS = 8 V
Fig. 9.

a

6V
10 V

4

Tj = 25°C

0

50

100

150

200

250

300 350
ID (A)

400

Tj = 25 °C

Transfer characteristics; drain current as afunction of gate-source voltage; typical values

Fig. 10. Drain-source on-state resistance as a functionof drain current; typical values

aaa-035534

2.2

VGS
(V)

aaa-035648

10

8

1.8

6
20 V

1.4

12 V

4

VDS = 5 V
1

0.6
-60

2

-30

0

30

60

90

120 150
Tj (°C)

0

180

0

20

40

60

80

100
120
QG (nC)140

Tj = 25 °C; ID = 25 A
Fig. 11. Normalized drain-source on-state resistancefactor as a function of junction temperature

PSMNR56-25YLE

Product data sheet

Fig. 12. Gate-source voltage as a function of gatecharge; typical values

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E
aaa-035649

105
C
(pF)

VDS
ID

104

Ciss

VGS(pl)Coss
103

VGS(th)

Crss

VGS
QGS2
QGS1
QGS

102
10-1

QGD
QG(tot)

IS
(A)

10

VDS (V)

Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvalues003aal160

aaa-035650

103

102

VGS = 0 V; f = 1 MHz

003aaa508

Fig. 13. Gate charge waveform definitions

1

ID
(A)

trr

102

ta

tb

0

10

0.25 IRM
150°C

1

0

0.2

0.4

Tj = 25°C

0.6

0.8

1
VSD (V)

IRM

t (s)

1.2

Fig. 16. Reverse recovery timing definition

VGS = 0 V
Fig. 15. Source-drain (diode forward) current as afunction of source-drain (diode forward)
voltage; typical values

PSMNR56-25YLE

Product data sheet

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PSMNR56-25YLE

Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

11. Package outline
Plastic single-ended surface-mounted package (LFPAK56E); 4 leads

A

E

SOT1023

E1

A

b1

b2
(3x)

c1

mounting
base
H

D1

D

L
1

2

3

4
b

e

A1

w

A

X

c

C
θ
Lp

detail X

0

2.5

mm

5 mm

scale

Dimensions
Unit

y C

A

A1

b

b1

b2

c

c1

D(1) D1(1) E(1) E1(1)max 1.10 0.15 0.50 4.41
0.25 0.30 4.70 4.45 5.30
nom
0.85
min 0.95 0.00 0.35 3.62
0.19 0.24 4.45
4.95

3.7
3.5

e
1.27

H

L

Lp

6.2

1.3

0.85

5.9

0.8

0.40

w

y

0.25

0.1

Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
Outlineversion

JEDEC

8°
0°
sot1023_po

References
IEC

θ

JEITA

Europeanprojection

Issue date
13-03-05
17-07-31

SOT1023

Fig. 17. Package outline LFPAK56E; Power-SO8 (SOT1023)

PSMNR56-25YLE

Product data sheet

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Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

12. Soldering
4.7
4.2

0.25
(2×)

0.9
(3×)

0.25
(2×)

0.6
(4×)

3.45
0.6
(3×)

2

3.5

2.55

0.25
(2×)
SR opening =Cu + 0.075

1.1
2.15
3.3

SP opening =Cu - 0.050

0.7
(4×)

1.27
3.81

solder lands

solder paste
125 µm stencil

solder resist

occupied area

sot1023_fr

Fig. 18. Reflow soldering footprint for LFPAK56E; Power-SO8 (SOT1023)

PSMNR56-25YLE

Product data sheet

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N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

13. Legal information

injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products insuch equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.

Data sheet status

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Document status[1][2]

Product
status [3]Definition

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
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agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

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to be accurate and reliable. However, Nexperia does not give any
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for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
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PSMNR56-25YLE

Product data sheet

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or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
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between the translated and English versions.

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10 November 2022

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Nexperia

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Legal information......................................................11© Nexperia B.V. 2022. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 November 2022

PSMNR56-25YLE

Product data sheet

All information provided in this document is subject to legal disclaimers.

10 November 2022

© Nexperia B.V. 2022. All rights reserved

12 / 12