CC

PA
K

121

2

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212
package
28 May 2024

Product data sheet

1. General description
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It
is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology
and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2. Features and benefits
•

•
•
•
•
•

Simplified driver design as standard level MOSFET gate drivers can be used:• 0 V to 12 V drive voltage• Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS ratingHigh gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
CCPAK package technology:• Improved reliability, with reduced Rth(j-mb) for optimal cooling• Lower inductances for lower switching losses and EMI• 150 °C maximum junction temperature• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages• Visual (AOI) soldering inspection, no need for expensive x-ray equipment• Easy solder wetting for good mechanical solder joints

3. Applications••••

Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage-55 °C ≤ Tj ≤ 150 °C

-

-

650

V

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

-

58.5

A

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

-

250

W

Tj

junction temperature

-55

-

150

°C

VGS = 10 V; ID = 32 A; Tj = 25 °C;
Fig. 10

-

33

39

mΩ

VGS = 10 V; ID = 32 A; Tj = 150 °C;
Fig. 11

-

73

86

mΩ

[1]

Static characteristics
RDSon

drain-source on-state
resistanceGAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
SymbolParameter

Conditions

Min

Typ

Max

Unit

ID = 32 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C; Fig. 12; Fig. 13

-

5

-

nC

-

26

-

nC

-

187

-

nC

Dynamic characteristics
QGD

gate-drain charge

QG(tot)total gate charge

Source-drain diode
Qr
[1]
[2]

recovered charge

IS = 32 A; dIS/dt = -1000 A/µs;
VGS = 0 V; VDS = 400 V; Fig. 20[2]

The ID value is calculated based on the maximum thermal resistance from junction to mounting base and the RDSon
Qr = Qoss +Qd where Qd is charge associated with minority carriers in the body diode of the Si mosfet of the cascode.

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription

Simplified outline

1

G

gate

2

S

source3Ssource4Ssource5Ssource6Ssource

7

D

drain

8

D

drain

9

D

drain

10

D

drain

11

D

drain

12

D

drain

mb

S

mounting base; connected
to source

1

2

3

4

Graphic symbol

5

D

6

G
12 11 10 9

8

7

S

CCPAK1212 (SOT8000)

aaa-028116

6. Ordering information
Table 3. Ordering information
Type number
Package
GAN039-650NBB

Name

Description

VersionCCPAK1212

Plastic, surface mounted copper clip package(CCPAK1212); 13 terminals; 2.0 mm pitch, 12 mm x 9.4mm x 2.5 mm body

SOT8000

7. Marking
Table 4. Marking codes
Type number

Marking code

GAN039-650NBB

039INBB

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

2 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage-55 °C ≤ Tj ≤ 150 °C

-

650

V

VTDS

transient drain to source
voltagepulsed; tp = 1 µs; δfactor = 0.01

-

725

V

VGS

gate-source voltage

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

250

W

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

58.5

A

VGS = 10 V; Tmb = 100 °C; Fig. 2

-

37

A

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

[1]

IDM

peak drain current

-

234

A

Tstg

storage temperature

-55

150

°C

Tj

junction temperature

-55

150

°C

Tsld(M)

peak soldering
temperature

-

260

°C

Source-drain diodeIS

source current

Tmb = 25 °C; VGS = 0 V

-

58.5

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

234

A

[1]

The ID value is calculated based on the maximum thermal resistance from junction to mounting base and the RDSon
03aa15

120
Pder
(%)

aaa-032944

200
ID
(A)

D = 10%150

80

D = 20%100
D = 50%40

50

0Fig. 1.

0

50

100

150

Tmb (°C)

0200

Fig. 2.

Product data sheet

25

DC

50

75

100

125

150
175
Tmb (°C)

200

VGS ≥ 10 V
(1) 53.5A DC continuous current has beensuccessfully demonstrated during application
tests. Practically the current will be limited by PCB,
thermal design and operating temperature.

Normalized total power dissipation as afunction of mounting base temperature

GAN039-650NBB(1)Continuous drain current as a function ofmounting base temperature

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

3 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

ID(A)

aaa-032945

103

Limit RDSon = VDS / ID

102

tp = 10 µs

DC

10100 µs
1 ms

1

10 ms
100 ms
10-1

1

102

10

103

VDS (V)Tmb = 25 °C; IDM is a single pulse
Fig. 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-mb)

Conditions

thermal resistance from Fig. 4junction to mounting
base

Min

Typ

Max

Unit

-

0.39

0.5

K/W

aaa-032947

1
Zth(j-mb)(K/W)δ = 0.5
10-1 0.2
0.1
0.05
10-2

0.02

single shot

P

δ=

tp
10-3
10-6

Fig. 4.

10-5

10-4

10-3

10-2

10-1

tp
T

t
T
tp (s)

1

Transient thermal impedance from junction to mounting base as a function of pulse duration

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

4 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

ID = 1 mA; VDS=VGS; Tj = 25 °C

3.4

3.9

4.6

V

ID = 1 mA; VDS=VGS; Tj = 150 °C; Fig. 9

2.4

-

-

V

ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9

-

-

5.2

V

VDS = 650 V; VGS = 0 V; Tj = 25 °C

-

2.5

20

µA

VDS = 650 V; VGS = 0 V; Tj = 150 °C

-

6

-

µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-

10

400

nA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

10

400

nA

VGS = 10 V; ID = 32 A; Tj = 25 °C;
Fig. 10

-

33

39

mΩ

VGS = 10 V; ID = 32 A; Tj = 150 °C;
Fig. 11

-

73

86

mΩ

f = 1 MHz

0.2

0.5

1.3

Ω

ID = 32 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C; Fig. 12; Fig. 13

-

26

-

nC

-

10.2

-

nC

-

5

-

nC

-

1980

-

pF

-

144

-

pF

-

1.6

-

pF

Static characteristics
VGS(th)

IDSS
IGSS
RDSon

RG

gate-source thresholdvoltagedrain leakage current
gate leakage current
drain-source on-state
resistancegate resistance

Dynamic characteristics
QG(tot)total gate charge

QGSgate-source charge

QGD

gate-drain charge

Cissinput capacitanceCossoutput capacitanceCrssreverse transfer
capacitanceCo(er)

effective output
capacitance, energy
related0 V ≤ VDS ≤ 400 V; VGS = 0 V;
f = 1 MHz; Tj = 25 °C; Fig. 15

-

218

-

pF

Co(tr)

effective output
capacitance, time
related0 V ≤ VDS ≤ 400 V; VGS = 0 V;
f = 1 MHz; Tj = 25 °C

-

432

-

pF

td(on)

turn-on delay time

-

17

-

ns

tr

rise time

VDS = 400 V; RL = 12.5 Ω; VGS = 12 V;
RG(ext) = 12 Ω; Fig. 16; Fig. 17

-

10

-

ns

td(off)turn-off delay time

-

28

-

ns

tf

fall time

-

9

-

ns

Qoss

output charge

VGS = 0 V; VDS = 400 V; Fig. 18

-

173

-

nC

IS = 32 A; VGS = 0 V; Tj = 25 °C; Fig. 19

-

1.6

-

V

IS = 16 A; VGS = 0 V; Tj = 25 °C; Fig. 19

-

1.2

-

V

IS = 32 A; dIS/dt = -1000 A/µs;
VGS = 0 V; VDS = 400 V; Fig. 20

-

25

-

ns

-

187

-

nC

VDS = 400 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14

Source-drain diodeVSD

source-drain voltagetrrreverse recovery timeQr

recovered charge

[1]

[1]

Qr = Qoss +Qd where Qd is charge associated with minority carriers in the body diode of the Si mosfet of the cascode.

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

5 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
aaa-032953

150
ID
(A)
125

10 V

aaa-032954

150
ID
(A)

6.5 V
6V

VGS = 10 V

120

6.5 V

100
90

6V

75
60
50

5.5 V

VGS = 5.5 V
30

25
5V
0

Fig. 5.

0

2

4

6

8

VDS (V)

0

10

2

4

6

8
VDS (V)10

Tj = 25 °C

Tj = 150 °C

Output characteristics; drain current as a
Fig. 6.
function of drain-source voltage; typical values

Output characteristics; drain current as afunction of drain-source voltage; typical values

aaa-032948

100
ID
(A)

80

60

60

40

40

0

150°C

0

2

4

20

Tj = 25°C

68
VGS (V)0

10

VDS = 8 V

Product data sheet

0

4

8

12

16
VGS (V)20

Tj = 25 °C; ID = 32 A

Transfer characteristics; drain current as afunction of gate-source voltage; typical values

GAN039-650NBB

aaa-032959

100
RDSon
(mΩ)

80

20

Fig. 7.

0

Fig. 8.

Drain-source on-state resistance as a functionof gate-source voltage; typical values

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

6 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

VGS(th)(V)

aaa-032958

6

aaa-032949

100
RDSon
(mΩ)

Max
5

5.5 V

6V

80

Typ
4
3

60

Min

40

6.5 V

2

0
-60

-30

0

30

60

90

120 150
Tj (°C)0180

ID = 1 mA ; VDS = VGS
Fig. 9.

a

VGS = 10 V

20

1

0

20

40

60

80
ID (A)

100

Tj = 25 °C

Gate-source threshold voltage as a function ofjunction temperature

Fig. 10. Drain-source on-state resistance as a functionof drain current; typical values

aaa-032955

3

VGS
(V)

2.5

aaa-032950

10

8

2
6
1.5

400 V

4
1
2

0.5
0
-60

-30

0

30

60

90

120 150
Tj (°C)

0

180

0

5

10

15

20

25
QG (nC)30

Tj = 25 °C; ID = 32 A
Fig. 11. Normalized drain-source on-state resistancefactor as a function of junction temperature

GAN039-650NBB

Product data sheet

Fig. 12. Gate-source voltage as a function of gatecharge; typical values

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

7 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
aaa-032951

104
C
(pF)

VDS
ID

Ciss

103
Coss

VGS(pl)102

VGS(th)

10

VGS
Q GS2

Crss

QGS1
Q GS

1

QGD
QG(tot)

1

102

10

VGS = 0 V; f = 1 MHz

003aaa508

Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesFig. 13. Gate charge waveform definitions+V

aaa-032956

50

103

VDS (V)

EOSS
(µJ)

C

40

GND

RL

Drain

30

20

DriverRG(ext)

Gate

DUT

10
Source

0

GND

0

100

200

300

400

500
600
VDS (V)

700

Fig. 16. Switching time test circuit

Fig. 15. Typical COSS Stored Energy
VDS

aaa-032509

aaa-032957

300

90 %

QOSS
(nC)
250
200

10 %

VGS

tr
td(on)

150

tf
td(off)

ton

100

toff
aaa-032510

50

Fig. 17. Switching time waveform

0

0

100

200

300

400

500
600
VDS (V)

700

Fig. 18. Typical QOSSGAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

8 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
aaa-032952

150
IS
(A)
125

Tj = 25°C
50°C
75°C
100°C

100

125°C
150°C

75
50
25
0

0

1

2

3

4
VSD (V)

5

VGS = 0 V
Fig. 19. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
I, V
dlS/dt

IS

trr

IRM
DUT

A

Qr

0.25 IRM

t

VRRM

VSD

+
aaa-029277

Fig. 20. Diode reverse recovery test circuit and waveform

11. Application information
A Ferrite bead must be fitted in series with the gate of the GaN FET and should be located as
close as possible to the gate pin, (see figure below). Keeping the gate-source loop as compact as
possible minimizes the gate loop inductance. The Ferrite bead damps the resonant circuit madeup of the gate source loop inductance and the GaN FET input capacitance, thus providing fastswitching stability. It is recommended that the impedance of the ferrite bead should be 30 Ω @100 MHz, (recommended p/n BLM18PG300SN1D). A series resistance (RG) of 10 - 15 Ω is also
recommended.

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

9 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
DC busdriver

RG

FB

RCDCL
(place as close as
possible to drain pin)

Q2

VSdriver

RG

FB

VDC

VBUS

Vo

Q1

10R

10R

10R

10nF

10nF

10nF

aaa-039732

aaa-037309

Fig. 22. Parallel RC combination

Fig. 21. Ferrite bead and RC resonance damper
A DC-link resonance damper is recommended in all cases. Optimal is 30 nF in series with 3.3 Ω,
most easily achieved with parallel combination 10 nF and 10 Ω. This resonance damper lowers the
Q factor of any resonance in the bus. That resonance will act as a load on the high gain amplifierthat is the GaN FET and can lead to instability.

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

10 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

12. Package outline
Plastic, surface mounted copper clip package (CCPAK1212);
13 terminals; 2.0 mm pitch, 12 mm x 9.4 mm x 2.5 mm body

SOT8000

(L1)

D
y C

A2

(A)

A3

A1

C

gauge planeseating plane(θ)

Ldetail M(View rotated 90° CCW)
pin 1 index& gate id

A

w

b

1

Exposedthermalpad areaC A-B D

6

e/2

e
6

gate id

1

E1
H

E

12

7
B

D

7

c

Mold ID

12
D1

M
0

5

Dimensions (mm are the original dimensions)
Unit
mm

A(ref)

A1

A2

max
0.13 2.65
nom 2.75
min
0
2.4

A3
0.25

10 mm

scale
D1

E(2)

E1

1.12

0.30 12.15 10.95

9.55

5.55

0.93

0.22 11.85 10.65

9.25

5.25

b

c

D(1)

e
2.0

H

L

12.15

1

11.85 0.6

L1(ref)wyθ(ref)

1.3

0.20

0.1

4°

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included for dimension D.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included for dimension E.
OutlineversionReferences
IEC

JEDEC

JEITA

sot8000_po

Europeanprojection

Issue date23-11-30
24-04-17

SOT8000

Fig. 23. Package outline CCPAK1212 (SOT8000)

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

11 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

13. Soldering
Footprint information for reflow soldering of CCPAK1212 package

SOT8000

12.5
11.8
1.4

0.6

1.3

0.7

2

1.2

1.8

1.7

1.6

0.97

2.35 (6x)

5.6

5.5

0.4
9.9 13.5
0.2

3.13

3.2 (6x)

0.4

0.2

10.8
10.9
recommended stencil thickness: 0.15 mm
occupied area

solder resist

solder landsolder paste

Dimensions in mm
Issue date

20-03-16

sot8000_fr

Fig. 24. Reflow soldering footprint for CCPAK1212 (SOT8000)

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

12 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

14. Legal information

injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products insuch equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.

Data sheet status

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Document status[1][2]

Product
status [3]Definition

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outsideof Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-criticalsystems or equipment, nor in applications where failure or malfunctionof an Nexperia product can reasonably be expected to result in personal

GAN039-650NBB

Product data sheet

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for thecustomer’s applications and products using Nexperia products in order toavoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement isconcluded only the terms and conditions of the respective agreement shallapply. Nexperia hereby expressly objects to applying the customer’s generalterms and conditions with regard to the purchase of Nexperia products bycustomer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, theproduct is not suitable for automotive use. It is neither qualified nor tested inaccordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

13 / 14

GAN039-650NBB

Nexperia

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Application information..............................................912. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Legal information......................................................13© Nexperia B.V. 2024. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 May 2024

GAN039-650NBB

Product data sheet

All information provided in this document is subject to legal disclaimers.

28 May 2024

© Nexperia B.V. 2024. All rights reserved

14 / 14