AN10273

Power MOSFET single-shot and repetitive avalancheruggedness rating
Rev. 5.0 — 20 June 2022

application note

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Content

Keywords

power MOSFET, single-shot, avalanche, ruggedness, safe operating condition

Abstract

Power MOSFETs are normally measured based on single-shot Unclamped Inductive Switching(UIS) avalanche energy. This application note describes in detail, the avalanche ruggedness
performance, fundamentals of UIS operation and appropriate quantification method for the safe
operating condition.

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

1. Introduction
Electronic applications have progressed significantly in recent years and have inevitably increased
the demand for an intrinsically rugged power MOSFET. Device ruggedness defines the capacityof a device to sustain an avalanche current during an unclamped inductive load switching event.
The avalanche ruggedness performance of a power MOSFET is normally measured as a singleshot Unclamped Inductive Switching (UIS) avalanche energy or EDS(AL)S. It provides an easy andquick method of quantifying the robustness of a MOSFET in avalanche mode. However, it does
not necessarily reflect the true device avalanche capability (see Ref. 1, Ref. 2 and Ref. 3) in an
application.
This application note explains the fundamentals of UIS operation. It reviews the appropriate
method of quantifying the safe operating condition for a power MOSFET, subjected to UIS
operating condition. The application note also covers the discussions on repetitive avalancheruggedness capability and how this operation can be quantified to operate safely.

2. Single-shot and repetitive avalanche definitions
Single-shot avalanche events are avalanche events that occur due to a fault condition in theapplication such as electrical overstress. The application does not have an avalanche designed
into its operation.
However, repetitive avalanche refers to the applications where avalanche is an intended operation
mode of the MOSFET. Here, avalanche is a designed function and has a limited number ofoperations to ensure reliability of the MOSFET over its life. The number of allowed events is afunction of the avalanche energy and can be determined from the data sheet charts found on
repetitive avalanche specific parts – ending in suffix R e.g. BUK9K51-60R.
Any customer wishing to operate outside the current avalanche ratings may be considered on an
application basis. Contact your local sales team for more information.

3. Understanding power MOSFET single-shot avalanche events
The researchers and the industry have established single-shot avalanche capability of a device(see Ref. 1, Ref. 2 and Ref. 3). The test is carried out on a simple unclamped inductive load
switching circuit, as shown in Fig. 1.

1
drain

L
2

gate
gate voltageRsourceVDD
001aaj764

Fig. 1.

AN10273

application note

Unclamped inductive load test circuit for MOSFET ruggedness evaluation

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

3.1. Single-shot UIS operation
A voltage pulse is applied to the gate to turn on the MOSFET, as shown in Fig. 2. It allows the load
current to ramp up according to the inductor value (L) and the drain supply voltage (VDD). The
phenomenon is shown in Fig. 3 and Fig. 4. At the end of the gate pulse, the MOSFET is turned
off. The current in the inductor continues to flow, causing the voltage across the MOSFET to rise
sharply. This overvoltage is clamped at breakdown voltage (VBR) until the load current reaches
zero, as illustrated in Fig. 3. Typically, VBR is:

VBR ≈ 1.3 × V(BR)DSS(1)

The peak load current passing through the MOSFET before turn off is the non-repetitive drainsource avalanche current (IDS(AL)S) of the UIS event. IDS(AL)S is illustrated in Fig. 4. The following
expression is used to determine the rate at which the avalanche current decays, which isdependent on the inductor value:dIDS(AL)SVBR − VDD
− = −−dtAL
L(2)

The peak drain-source avalanche power (PDS(AL)M) dissipated in the MOSFET is shown in Fig. 5.
It is a product of the breakdown voltage (VBR) and the non-repetitive drain-source avalanche
current (IDS(AL)S); see Fig. 3 and Fig. 4. The avalanche energy dissipated is the area under the PAV
waveform and is estimated from the following expression:

PDS(AL)M × tAL
EDS(AL)S = −
2

(3)

or:

1 ⋅ VBR
EDS(AL)S = −− ⋅ LI2DS(AL)S
2 VBR − VDD(4)

Another crucial parameter involved in a MOSFET avalanche event is the junction temperature.
After the avalanche event (t) has begun, the following expression is used to determine thetransient junction temperature variation during device avalanche at a given time:(5)t

ΔTj(t) =∫0dZth(t−t)
PAV(t) −dt
dt

where Zth is the power MOSFET transient thermal impedance. Alternatively, the following
expression approximates the maximum ΔTj:
(6)

Assuming that Tj(max) occurs at tAL/2,
is the transient thermal impedance measured
at half the avalanche period tAL. Note, the Zth value used for the avalanche calculation is moreconservative than the one published in data sheets due to the nature of avalanche.
Therefore, the maximum junction temperature resulting from the avalanche event is:

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Power MOSFET single-shot and repetitive avalanche ruggedness rating(7)

Tj(max) ≈ ΔTj(max) + Tj
where Tj refers to the junction temperature prior to turn off.

3.1.1. Single-shot UIS waveforms
VDS

VGS

VBR
V(BR)DSS

ON

VDD

OFF

VDD

time

Fig. 2.

Gate-source voltage, VGS

Fig. 3.

Fig. 4.

P

IDS(AL)SPDS(AL)M

area in PDS(AL) triangle= avalanche energy(EDS(AL)S) dissipated

time

tAL

001aaj767

Drain current, ID

Fig. 5.

001aaj766

Drain-source voltage, VDS

ID

tAL

time

tAL

001aaj765

time001aaj768

Peak drain-source avalanche power, PDS(AL)M

Tj
Tj(max)Tj(max)Tj

tAL

Fig. 6.

time
001aaj769

Transient junction temperature profile of MOSFET during an avalanche event

3.2. Single-shot avalanche ruggedness rating
The failure mechanism for a single-shot avalanche event in a power MOSFET is due to thejunction temperature exceeding the maximum temperature rating. In such a case, catastrophic
damage occurs to the MOSFET. If the transient temperature resulting from an avalanche event, asshown in Fig. 6, rises beyond a recommended rated value, the device risks being degraded. The
recommended rated value is de-rated from the maximum temperature for optimum reliability.
Blackburn (see Ref. 2) has discussed a general guideline in detail, on the appropriate methodof quantifying the single-shot avalanche capability of a device. It takes the avalanche current
and initial junction temperature into consideration. The maximum allowed avalanche current as
a function of avalanche time defines the safe operation for a device single-shot UIS event. The
maximum allowed avalanche current is set so that a safe maximum junction temperature, Tj(max) of
175 °C, is never exceeded. Using Equation 7, Fig. 7 is plotted.

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

IAL
(A)

aaa-031581

102

10

1

10-1
10-3

Fig. 7.

10-2

10-1

1
tAL (ms)10

BUK9K51-60R avalanche rating; avalanche current as a function of avalanche time

Fig. 7 shows the SOAR curve of a device single-shot avalanche capability. The 25 °C junction
temperature curve shows the maximum allowable IAL for a given tAL at an initial Tj of 25 °C. Thismaximum IAL results to a maximum allowable junction temperature Tj(max) of 175 °C, which meansa ΔTj(max) of 150 °C. The area under the SOAR curve is the Safe Operating Area (SOAR).
The maximum junction temperature resulting in catastrophic device avalanche failure isapproximately 380 °C, which is in excess of the rated Tj(max) of 175 °C. However, operating beyond
the rated Tj(max) may induce long-term detrimental effects to the power MOSFET and is notrecommended.

4. Understanding power MOSFET repetitive avalanche events
Repetitive avalanche refers to an operation involving repeated single-shot avalanche events,
as discussed earlier. Until recently, most manufacturers have avoided the issues pertaining to
the power MOSFET repetitive avalanche capability. It is primarily due to the complexity in suchoperations and the difficulties in identifying the underlying physical degradation process in thedevice.
Due to the traumatic nature of the avalanche event, a repetitive avalanche operation can be
hazardous for a MOSFET. It is hazardous even when the individual avalanche events are below
the single-shot UIS rating. This type of operation involves additional parameters such as frequency,
duty cycle, and thermal resistances (Rth(j-a) and Rth(j-mb)) of the system during the avalanche event.
However, it is possible to de-rate the single-shot rating to define a repetitive avalanche SOAR.

4.1. Repetitive UIS operation
The repetitive UIS test circuit is shown in Fig. 1. The gate is fed with a train of voltage pulses at afrequency (f) and for a duty cycle as shown in Fig. 8. The resulting breakdown voltage (VBR) anddrain current (ID) passing through the load are the same as for a single-shot UIS. However, thepeak ID is now denoted as repetitive drain-source avalanche current (IDS(AL)R), as shown in Fig. 9.
The repetitive drain-source avalanche power (PDS(AL)R) resulting from the repetitive UIS operationis shown in Fig. 10. For finding the value of PDS(AL)R, it is necessary to first calculate EDS(AL)S fora single avalanche event using Equation 3. This resultant value of EDS(AL)S is substituted in thefollowing expression, to calculate the value of PDS(AL)R:PDS(AL)R = EDS(AL)S × ¦AN10273

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

4.1.1. Repetitive UIS waveforms
VGS
VBR
V(BR)DSS
IDS(AL)R

VDD

001aaj771

Fig. 8.

Gate pulse, VGS

time

tAL

time

Fig. 9.

001aaj772

Drain-source voltage, VDS and repetitive drainsource avalanche current, IDS(AL)RTj

P

PDS(AL)M
PDS(AL)RtAL

Tj

Tj(init)Tmb

Tj(AV)
time

time

tAL

001aaj773

Fig. 10. Repetitive drain-source avalanche power,
PDS(AL)R

001aaj774

Fig. 11. Transient junction temperature components of
MOSFET during repetitive avalanche

4.2. Temperature components
The temperature rise from the repetitive avalanche mode in the power MOSFET is shown in
Fig. 11.
The temperature (Tj(init)) comprises the mounting base temperature (Tmb) and the temperature rise
resulting from any on-state temperature difference (ΔTon).

Tj(init) = Tmb + ΔT

(9)

on

In addition, there is a steady-state average junction temperature variation (ΔTj) resulting from theaverage repetitive avalanche power loss.

ΔTj = PDS(AL)R × Rth(j-a)(10)

where Rth(j-a) is the thermal resistance from junction to ambient of the device in the application. The
summation of Equation 9 and Equation 10 gives the average junction temperature, Tj(AV) of a power
MOSFET in repetitive UIS operation.

Tj(AV) = Tj(init) + ΔTj

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

5. Repetitive avalanche ruggedness rating
Our investigations show that there is more than one failure or wear-out mechanism involved in
repetitive avalanche. Temperature is not the only limiting factor to a repetitive avalanche operation.
However, by limiting temperature and the repetitive drain-source avalanche current (IDS(AL)R),
an operating environment is defined such that the avalanche conditions do not activate device
degradation. It allows the power MOSFET to operate under repetitive UIS conditions safely.
Fig. 12 shows the repetitive avalanche SOAR curve of BUK9K51-60R, where for each avalanche
event the Tj rise is limited to 30 K.

IAL
(A)

aaa-031582

102

10

1

10-1
10-3

10-2

10-1

1
tAL (ms)

10

Fig. 12. Repetitive avalanche rating; avalanche current
The three conditions which must be satisfied for safe operation of a power MOSFET under
repetitive avalanche mode are:
1. I(AL) should not exceed the repetitive avalanche SOAR curve
2. Tj should not exceed 175 °C
3. The number of cycles should not exceed the avalanche cycle limit chart
The number of allowable cycles can be determined through a second chart in the avalanche
MOSFET’s data sheet, (see Fig. 13).
aaa-031584

1010
No. Events

109

108

1

10
EDS(AL) Per Event (mJ)102

Fig. 13. Repetitive avalanche rating; maximum number of avalanche events as a functionof avalanche energy

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

6. Conclusion
Power MOSFETs can sustain single-shot and repetitive avalanche events. Simple design rules andSOAR regions are provided.

7. Examples
The following examples examine cases of avalanche operation acceptance:

7.1. Single-shot avalanche case
•
•
•
•
•
•

Device: BUK9K51-60R; see Fig. 7
L = 30 μH
I(AL) = 18 A
Rth(j-a) = 5 K/W
V(BR)DSS = 60 V
VDD = 0 V

7.1.1. Calculation steps
1. Using the above information, tAL can be determined using Equation 2, which in this case is
7 μs. Transferring the IAL and tAL conditions onto Fig. 12, the operating point is under the SOAR
curve. It suggests that the operating condition may be feasible.

7.2. Repetitive avalanche case
•
•
•
•
•
•
•
•

Device: BUK9K51-60R; see Fig. 12 and Fig. 13
L = 30 μH
I(AL) = 10 A
f = 3 kHzRth(j-a) = 5 K/W
To = 100 °C
V(BR)DSS = 60 V
VDD = 0 V

7.2.1. Calculation steps
1. From the above information, tAL can be determined using Equation 2, which in this case isapproximately 4 μs. Transferring the IAL and tAL conditions onto Fig. 12, the operating point isunder the boundary of the ‘Rep. Ava’ SOAR curve. It suggests that the operating condition is
acceptable. Therefore, condition 1 is satisfied.
2. Calculate the non-repetitive drain-source avalanche energy (EDS(AL)S) using Equation 3(EDS(AL)S = 1.56 mJ).
3. Calculate the repetitive drain-source avalanche power (PDS(AL)R) using Equation 8(PDS(AL)R = 4.68 W).
4. Calculate the average ΔTj rise from repetitive avalanche (ΔTj) using Equation 10(ΔTj = 123.4 °C).
5. Determine the average junction maximum temperature in repetitive avalanche operation (Tj(AV))
using Equation 11 (Tj(AV) = 153 °C). Therefore, condition 2 is satisfied.
6. Finally based on the energy we can determine the limit number of operations at these9
conditions from Fig. 13, (No. events = 8e )Based on the above calculations, the operating conditions meet the repetitive avalanche
9requirements with a limited number of repetitive events of 8e .

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Power MOSFET single-shot and repetitive avalanche ruggedness rating

8. Appendix A
The following table describes the symbols used throughout this application note.
Table 1. Description of symbols
SymbolDescription
V(BR)DSS

drain-source breakdown voltage

EDS(AL)S

non-repetitive drain-source avalanche energyIDdrain current

IDS(AL)S

non-repetitive drain-source avalanche current

IDS(AL)R

repetitive drain-source avalanche current

IAL

avalanche current

Linductance

PDS(AL)M

peak drain-source avalanche power

PDS(AL)R

repetitive drain-source avalanche powerRth(j-a)thermal resistance from junction to ambient

Rth(j-mb)

thermal resistance from junction to mounting baseTj(init)initial junction temperature [1]ΔTonon-state temperature difference

Tjjunction temperature

ΔTjjunction temperature variation

ΔTj(max)

maximum junction temperature variation

Tj(max)maximum junction temperature

Tj(AV)

average junction temperature [2]Tmbmounting base temperaturetAL

avalanche time

VBR

breakdown voltage

VDS

drain-source voltage

VGS

gate-source voltage

Zthtransient thermal impedanceZth(tAL/2)

transient thermal impedance [3]VDD

supply voltage

[1]
[2]
[3]

Summation of Tmb and ΔTon.
For repetitive avalanche.
Measured at half the avalanche period.

9. Abbreviations
Table 2. Abbreviations
AcronymDescription

AN10273

application note

MOSFET

Metal-Oxide Semiconductor Field-Effect Transistor

SOAR

Safe Operating ARea

UIS

Unclamped Inductive Switching

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10. References
1. Turn-Off Failure of Power MOSFETs — D.L. Blackburn, Proc. 1985 IEEE Power Electronics
Specialists Conference, pages 429 to 435, June 1985.
2. Power MOSFET failure revisited — D.L. Blackburn, Proc. 1988 IEEE Power Electronics
Specialists Conference, pages 681 to 688, April 1988.
3. Boundary of power-MOSFET, unclamped inductive-switching (UIS), avalanche-current
capability — Rodney R. Stoltenburg, Proc. 1989 Applied Power Electronics Conference, pages
359 to 364, March 1989.

11. Revision history
Table 3. Revision history
Revision
Date
numberDescription

5.0

2022-06-20

Equation 6 corrected.

4.0

2020-07-02

Document updated to latest Nexperia standards. Examples updated to use BUK9K51-60R.

3.0

2016-12-10

Section 2: added

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List of Tables
Table 1. Description of symbols...........................................9
Table 2. Abbreviations..........................................................9
Table 3. Revision history....................................................10

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List of Figures
Fig. 1. Unclamped inductive load test circuit for
MOSFET ruggedness evaluation......................................... 2
Fig. 2. Gate-source voltage, VGS........................................ 4
Fig. 3. Drain-source voltage, VDS....................................... 4
Fig. 4. Drain current, ID....................................................... 4
Fig. 5. Peak drain-source avalanche power, PDS(AL)M...... 4
Fig. 6. Transient junction temperature profile of
MOSFET during an avalanche event...................................4
Fig. 7. BUK9K51-60R avalanche rating; avalanche
current as a function of avalanche time...............................5
Fig. 8. Gate pulse, VGS.......................................................6
Fig. 9. Drain-source voltage, VDS and repetitive drainsource avalanche current, IDS(AL)R................................... 6
Fig. 10. Repetitive drain-source avalanche power,
PDS(AL)R.............................................................................6
Fig. 11. Transient junction temperature components of
MOSFET during repetitive avalanche.................................. 6
Fig. 12. Repetitive avalanche rating; avalanche current...... 7
Fig. 13. Repetitive avalanche rating; maximum
number of avalanche events as a function ofavalanche energy.................................................................7

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Contents
1. Introduction................................................................... 2
2. Single-shot and repetitive avalanche definitions.......2
3. Understanding power MOSFET single-shot
avalanche events............................................................... 2
3.1. Single-shot UIS operation............................................3
3.1.1. Single-shot UIS waveforms...................................... 4
3.2. Single-shot avalanche ruggedness rating....................4
4. Understanding power MOSFET repetitive
avalanche events............................................................... 5
4.1. Repetitive UIS operation..............................................5
4.1.1. Repetitive UIS waveforms........................................ 6
4.2. Temperature components............................................ 6
5. Repetitive avalanche ruggedness rating.................... 7
6. Conclusion.................................................................... 8
7. Examples....................................................................... 8
7.1. Single-shot avalanche case.........................................8
7.1.1. Calculation steps...................................................... 8
7.2. Repetitive avalanche case...........................................8
7.2.1. Calculation steps...................................................... 8
8. Appendix A....................................................................99. Abbreviations................................................................ 9
10. References................................................................ 10
11. Revision history........................................................ 10
12. Legal information......................................................11© Nexperia B.V. 2022. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 June 2022

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