Technical Program
www.spie.org/al

Location
San Jose Marriott and
San Jose Convention Center
San Jose, California, USA

Conferences and Courses
24–28 February 2013
Exhibition
26–27 February 2013

WelcomeYour attendance at SPIE Advanced Lithography
increases your company’s success in the lithographyindustry through access to the latest research,
networking opportunities, and technology on display.
SPIE would like to express its deepest
appreciation to the symposium chairs,
conference chairs, program committees,
and session chairs who have so
generously given their time and advice tomake this symposium possible.

Technical Program
Conferences and Courses: 24–28 February 2013 · Exhibition: 26–27 February 2013
San Jose Marriott and San Jose Convention Center, San Jose, California, USA

The symposium, like our other conferences
and activities, would not be possible
without the dedicated contribution of ourparticipants and members. This programis based on commitments received up to
the time of publication and is subject tochange without notice.

Contents

Technical Conferences

Welcome . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Sponsors  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Floor Plans . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Daily Schedule . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Events, Conferences
Plenary Presentations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6–7
Special and Technical Events  . . . . . . . . . . . . . . . . . . . . . . 6–8
Award Announcements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Exhibition Information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11–14
Course Schedule . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Technical Conference Session Schedule . . . . . . . . . . . 16–17
Index of Authors, Chairs, and Committee Members . . 54–65
Proceedings of SPIE  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66

Extreme Ultraviolet (EUV) Lithography IV(Naulleau, Wood)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-48
Alternative Lithographic Technologies V(Tong, Resnick) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-52
Metrology, Inspection, and Process Control
for Microlithography XXVII (Starikov, Cain) . . . . . . . . 18-52
Advances in Resist Materials and Processing
Technology XXX (Somervell, Wallow)  . . . . . . . . . . . . . 18-43
Optical Microlithography XXVI
(Conley, Lai)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19-53
Design for Manufacturability through
Design-Process Integration VII (Mason,
Sturtevant)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19-53
Advanced Etch Technology for
Nanopatterning II (Zhang, Oehrlein, Lin) . . . . . . . . . . . 19-31

Sponsored by+1 360 676 3290

· help@spie.org·#SPIELitho1

Welcome!
Executive Committee
Jason P. Cain, Advanced Micro Devices, Inc.
Will Conley, Cymer, Inc.
Mircea V. Dusa, ASML US, Inc.
Kafai Lai, IBM Corp.
Harry J. Levinson, GLOBALFOUNDRIES Inc.
Mark E. Mason, Texas Instruments Inc.
Patrick P. Naulleau, Lawrence Berkeley National Lab.
Gottlieb Oehrlein, Univ. of Maryland, College Park
Douglas J. Resnick, Molecular Imprints, Inc.
Mark H. Somervell, Tokyo Electron America, Inc.
Alexander Starikov, I&I Consulting
John L. Sturtevant, Mentor Graphics Corp.
William M. Tong, KLA-Tencor Corp
Thomas I. Wallow, GLOBALFOUNDRIES Inc.
Obert R. Wood II, GLOBALFOUNDRIES Inc.
Ying Zhang, Taiwan Semiconductor Manufacturing Co., Ltd.
Advisory Committee
Robert D. Allen, IBM Almaden Research Ctr.
William H. Arnold, ASML US, Inc.
Timothy A. Brunner, IBM Thomas J. Watson Research Ctr.
Ralph R. Dammel, AZ Electronic Materials USA Corp.
Roxann L. Engelstad, Univ. of Wisconson, Madison
Donis G. Flagello, Nikon Research Corp. of America
Harry J. Levinson, GLOBALFOUNDRIES Inc.
Burn Lin, Taiwan Semiconductor Manufacturing Co., Ltd.
Chris A. Mack, lithoguru.com
Wilhelm Maurer, Infineon Technologies AG
Christopher J. Progler, Photronics, Inc.
Michael T. Postek, National Institute of Standards and Technology
Luc Van den hove, IMEC
C. Grant Willson, The Univ. of Texas at Austin
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd.

2

Today, lithographers are challenged with cost-effectively extending immersion
lithography to physical limits using multi-exposure and multiple-etch processes,
while striving to bring newer technologies, such as EUV lithography, to production
readiness. Success will demand unprecedented ingenuity, cost efficiency, andcommunication within the lithography community and across interdisciplinary lines.
For the past 37 years, SPIE Advanced Lithography has played a key role in bringing
the lithography community together to solve challenges required by the semiconductor
industry. Symposium participants come from an extensive array of backgrounds toshare and learn about state-of-the-art lithographic tools, resists, metrology, materials
characterization, and design and process integration.
SPIE Advanced Lithography is organized into seven conferences:• Alternative Lithographic Technologies• Extreme Ultraviolet Lithography• Metrology, Inspection, and Process Control for Microlithography• Advances in Resist Materials and Processing Technology• Optical Microlithography• Design for Manufacturability through Design-Process Integration• Advanced Etch Technology for Nanopatterning
All conferences are organized by current practitioners of the art, and numerous
courses are taught by recognized industry experts. Additional information is available
from the many manufacturers’ exhibits, which allow tool makers and material andsoftware suppliers to showcase new products while interacting one-on-one withcustomers. Through a series of thought-provoking panel discussions and seminars,
the symposium further probes current issues to be faced as we extend thesetechnologies or try to switch to alternative technologies.
We welcome you to the San Jose Convention Center, San Jose, California, for SPIE
Advanced Lithography’s 38th year!
Harry J. Levinson
GLOBALFOUNDRIES Inc.
2013 Symposium Chair

SPIE Advanced Lithography 2013·www.spie.org/al

Mircea V. Dusa
ASML US, Inc.
2013 Symposium Co-ChairThanks to the following sponsors for their generous support of SPIE Advanced Lithography
Wi-Fi

Tuesday Lunch Co-Sponsor

Plenary Sessionwww.asml.com

www.dow.com

Advanced Etch Technology for
Nanopatterning II Conference

www.hitachi-hta.com

www.tel.com
www.lamrc.com

Extreme Ultraviolet (EUV) Lithography IV Conference

Advances in Resist Materials andProcessing Technology XXIV Conference

www.cymer.com

Lanyards
www.mentor.com

Meter Board

www.hitachi-hta.com

Conference Bag
www.tokamerica.com

Alternative Lithographic Technologies V
Conference

www.cymer.com

www.nikonprecision.com

Conference Bag Pen

Stairway Strips

www.azem.com

www.fujifilm-ffem.com

Coffee Breakwww.nikonprecision.com

BannerExhibitor Lounge

www.asml.com

www.hitachi-hta.com
www.kla-tencor.com

www.hitachi-hta.com

Exhibition Bag

Tuesday Poster Reception

www.tel.com

www.smt.zeiss.com/sms

Wednesday Poster Reception

Luggage Tags

eptionwww.kla-tencor.com

www.nikonprecision.com

Breakfast Sponsor
  

www.azem.com

www.appliedmaterials.com

Hotel Room Key

www.appliedmaterials.com

General Refreshments
www.tokamerica.com

www.cymer.com

Internet Pavilion

Optical Microlithography XXVI Conference

www.jeolusa.com+1 360 676 3290

www.cymer.com· help@spie.org · #SPIELitho

ASML
Hitachi High Technologies
Micro Lithography Inc.
Solid State Technology
TNO Science and Industry
3

San Jose
Convention Centerand Marriott Hotel

214
213

San Jose Convention Center
Exhibit and Meeting Room Level

212
210

231

211

Exhibition
Hall 1

Down to Rooms
111–114

Speaker Check-in Desk
Internet Pavilion
SPIE Marketplace

Hall 2

111

112

San Jose Marriott, Second Floor

114

Hall 3

Hilton Hotel

Third Floor

113

233
232

Exhibitor Registration
Attendee Registration

MarriottSalons

4

230

SPIE Advanced Lithography 2013·www.spie.org/alDaily Schedule
Sunday	Special Events

Monday	Tuesday	

Welcome and Announcements (Levinson),
8:00 to 8:40 am, p. 6
Plenary presentation: Contact Printing to
EUV: Lessons Learned from the Art of
Lithography (Siegle) 8:40 to 9:10 am, p. 6
Plenary presentation: The Evolution of
EDA Alongside Rapid Silicon Technology
Innovation (Ko) 9:10 to 9:50 am, p. 7
Plenary presentation: The New U.S. Patent
Law: What You Need to Know and How
It Will Affect Your Strategy (Szmanda,
Shelnut) 9:50 to 10:30 am, p. 7

Wednesday	

Exhibition, p. 10
10:00 am to 5:00 pm             10:00 am to 4:00 pm
Panel Discussion on Challenges for
Directed Self-Assembly (Cheng, Tong)
5:00 to 7:00 pm, p. 8

Poster Reception (Conferences 8681,
8682, 8685) 6:00 to 8:00 pm, p. 8

Joint Panel Discussion (Joint Panel withconfs. 8679, 8680, 8682, 8683, 8684), 7:30
to 9:00 pm, p. 8
Poster Reception (Conferences 8679,
8680, 8683, 8684) 6:00 to 8:00 pm, p.8

Panel Discussion on Making a
Business Case for Disruptive Metrology
Technologies: What Should We Invest
In? (Vaid, Bunday, Sendelbach) 7:30 to
9:00 pm, p. 8

ThursdayPresentation of the Best Student Paper
Award in Microlithography, 10:30 to10:40 am, p. 9
2013 Best Student Paper Award in
Metrology, 10:30 to 10:40 am, p. 9

Award Announcements for Conference
on Metrology, Inspection, and Process
Control for Microlithography, 11:00 to
11:20 am, p. 9
Award Announcements for Conference
on Advances in Resist Materials andProcessing Technology, 11:00 to 11:20
am, p. 9
Nanotechnology in Microlithography
Panel Discussion, Approaching the Limitsof 3D Metrology: Are There Any Solutions
Beyond 14 nm? (Silver, Barnes, Bunday)
6:00 to 7:30 pm, p. 8

Conferences

Conf. 8679 Extreme Ultraviolet (EUV) Lithography IV (Naulleau) p. 18-48
Conf. 8680 Alternative Lithographic Technologies V (Tong) p. 18-52
Conf. 8681 Metrology, Inspection, and Process Control for Microlithography XXVII (Starikov) p. 18-52
Conf. 8682 Advances in Resist Materials and Processing Technology XXX (Somervell) p. 18-43
Conf. 8683 Optical Microlithography XXVI (Conley) p. 19-53
Conf. 8685 Advanced Etch Technology for Nanopatterning II (Zhang) p. 19-31

Conf. 8684 Design for Manufacturability through Design-Process Integration VII(Mason) p. 19-53

See Course Daily
Schedule, page 15.

+1 360 676 3290

· help@spie.org·#SPIELitho

5

Special Events
Welcome and Announcements

Plenary Presentations · Convention Center Hall 3

Convention Center Hall 3

8:40 to 9:10 am

Monday 25 February. . . . . . . . . . . . .  8:00 to 8:40 am
Symposium Chair: Harry J. Levinson,
GLOBALFOUNDRIESContact Printing to EUV: Lessons Learned
from the Art of Lithography

Introduction of New SPIE Fellows
10th Frits Zernike Award for Advances in
Optical MicrolithographyAward Sponsored by:

6

William T. Siegle, Independant
Consultant and ASML Advisory Board
MemberWe have all had the privilege of working in anelectronics industry that has shown stunningadvances.   Over the last 50 years, wehave watched a progression from discrete
transistors and simple ICs, to powerfulcomputers we all carry in our pockets. This progress would
not have been possible without equally remarkable progressin semiconductor lithography, the art of creating patterns
on silicon to form these circuit patterns.
Through my career at IBM, AMD, and Board memberships
at Etec, DuPont Photomasks, and ASML, I have been bothobserver, participant, and user of lithography. The enormous
progress in both the IC technology and the accompanying
lithography techniques has provided many “teaching
moments”. It is my privilege to share some of the lessons
gleaned from this experience. While some of these lessons
are peculiar to our arcane art, others may be more broadly
applicable.
The first era of lithography practiced “1 to 1” printing. Thatis, mask patterns and wafer images were dimensioned in a
one-to-one relationship. Initially practiced through contact
printing in the 60s, moving to 1x projection in the 70s, thispractice served well until demands on mask fidelity became
too great, and reduction alternatives became available.
As wafer sizes grew, and feature sizes shrank, optical
reduction techniques and “step and repeat” of sub wafer
field sizes ruled the day. Once robust steppers became
widely available, the race turned to reducing wavelength and“wave front engineering” to deliver smaller features. With
exposure wavelengths currently limited to 193nm, exhausted
litho engineers are resorting to multiple patterning to escape
the trauma of ridiculously low k1 values.

SPIE Advanced Lithography 2013·www.spie.org/al

EUV with its 13.5nm wavelength promises relief from
193nm limits. While prototype machines are operating
in a number of customer fabs, the productivity required
for economical manufacturing insertion has not yet been
demonstrated.   Other alternatives, such as e- beam or
nanoimprint have shown promising laboratory results, andshow lots of activity at this conference each year. But a
viable path to production insertion for these alternatives
is not visible, and substantial industrialization investment
would be required.
Never-the-less, the dedication and ingenuity of ourworldwide talents always seems to find a way.  Many lessons
have been learned, with in all likelihood, more to come.
Bill (William T.) Siegle attended Rensselaer Polytechnic,
and he received his Ph. D. in Electrical Engineering in1964.
He enjoyed a 25 year career at IBM where he became the
Director of the Advanced Technology Center in East Fishkill.  
He joined Advanced Micro Devices in Sunnyvale in 1990 asVice President of Technology, and retired in 2005 as Sr. VP
of Technology and Manufacturing. He has served on theboards of SRC and Sematech, and the public companies
Etec, DuPont Photomasks and currently ASML. He has been
involved with lithography throughout his career, as both anenabler and a user.

Plenary Presentations Sponsored by:
9:10 to 9:50 am

9:50 to 10:30 am

The Evolution of EDA Alongside Rapid
Silicon Technology Innovation

The New U.S. Patent Law: What You
Need to Know and How It Will Affect Your
Strategy

Howard Ko, Senior VP and General
Manager, Synopsys’ Silicon EngineeringGroup
The overall product design andmanufacturing flow needed to create a
new advanced semiconductor device is
one of the most economically successful
and most complex industrial ecosystems in the world. The
ongoing economic success is especially amazing when
one considers the enormous changes which occurs in thiscomplex ecosystem every technology generation. SPIE
attendees know full well the many important difficulties andchallenges involved in continuing the rapid pace of costeffective lithography and silicon process development. Just
as critical, however, are the challenges which designers and
EDA suppliers face to modify and re-architect their design
flows and design tools to best incorporate the outcomesof this rapid technology improvement. The goal of this talkis to provide high level insight into the continuing evolution
which the EDA industry has done and must continue to
do in order to keep pace with the hectic pace of silicon
technology innovation.
Dr. Howard Ko joined Synopsys in June 2002 and iscurrently Senior Vice President and General Manager of
the Silicon Engineering Group. He manages products
and solutions that address semiconductor manufacturing
technology needs. These solutions include TCAD, yield
management, failure analysis, mask data preparation,
Optical design and analysis, Photonics design, lithography
simulation, and mask patterning. In his previous role as Vice
President of Sales, Asia Pacific, Dr. Ko built a continuously
increasing revenue stream, improved Synopsys’ leadership
position in the region, and increased collaboration withleading foundries. Before joining Synopsys, Dr. Ko served
as Avant!’s executive operating officer since July 2001.
Previously, he was general manager of Avant!’s mixed
technology division and head of the system product line. Dr.
Ko has also held senior management roles at Analogy, Inc.
and Mentor Graphics. Dr. Ko received his Ph.D. in ElectricalEngineering and Computer Science from UC Berkeley, andgraduated with a B.S. degree in Electrical Engineering fromthe National Taiwan University.

Charles R. Szmanda, James G.
Shelnut,The Patent Practice of Szmanda,
Shelnut, LLC
Over the years, the electronic patterning
arts have been characterized by a businessenvironment that incorporates features ofpre-competitive cooperation during theearly phases of development and intensecompetition during the later phases.  Cooperative activities
such as pre-competitive development, joint development
agreements, road-mapping activities, and the sharingof resources are commonplace.   Moreover, while theelectronics industry is intensely competitive during laterstages of development and production, the willingness ofmany industry players to license and cross license patented
technologies has promoted rapid technological development
for decades in ways not seen in other industries.   Thisbusiness environment, and the old patent laws based on“first-to-invent” priority, have formed a basis for many
current intellectual property strategies.
In this talk, we review briefly what a patent is and what isrequired to get one.   We then describe the most important
aspects of the new patent law.  These include: (1) the “firstinventor to file” system, which takes effect on March 16,
2013 and replaces the “first to invent” system in current
law; (2) new ways to challenge issued patents such as“Post Grant Review” and “Inter Partes” review; (3) prior art
submission during prosecution of another inventor’s patentapplication; (4) prioritized examination of applications; and(5) prior user rights.  We go on to discuss how these newelements of the law will alter the competitive environment but
will also present a number of  opportunities for formulating
a successful patent strategy within that new environment.

+1 360 676 3290

· help@spie.org·#SPIELitho

We conclude by offering several suggestions forformulating a practical patent strategy in view of the newlaws.   We show how publishing at the wrong time candestroy your right to get a patent but publishing at theproper time can enhance your competitive position.   Wefurther show how you can protect your right to practicetrade secrets that you choose not to patent.   Finally, weshow how the law provides opportunities to challenge patentclaims submitted by competitors both before and after thepatent is granted.
Charles R. Szmanda is a principal partner at the Patent
Practice of Szmanda & Shelnut, LLC. He has been a patent
agent, for over 12 years and is registered to practice before
the United States Patent and Trademark Office and theCanadian Intellectual Property Office.
Szmanda spent many years in research and development,
most recently as a Research Fellow at the Dow Electronic
Materials Company, where he worked on electronic
applications of nanotechnology and did research on
photoresist materials. During his career, he designed
processes for making silicon devices at Bell Labs,
did polymer research for micro and nanolithography,
helped found a startup company called Aspect Systems,
did fundamental research on electron transfer duringmolecular collisions, practiced the wonderful art of x-ray
crystallography and generally had a lot of fun. He holds
31 U.S. patents and is the author of over 60 scientificpublications.
Szmanda holds a B.S. in chemistry from Loyola University
and a Ph.D. in physical chemistry from the University of
Wisconsin.
In his off hours, he continues to blow the hell out of his
flugelhorn whenever he can put a band together.

7

Technical Events
Nanotechnology in Microlithography
Panel Discussion

Panel Discussion on Challenges for
Directed Self-Assembly

Convention Center Room 210 B

Convention Center Hall 3

Monday 25 February. . . . . . . . . . . . . . . . . 6:00 to 7:30 pm

Tuesday 26 February. . . . . . . . . . . . . . . .  5:00 to 7:00 pm
Moderators: William M. Tong, KLA-Tencor Corp. and Joy
Y. Cheng, IBM Almaden Research Ctr.

Approaching the Limits of 3D Metrology: Are There
Any Solutions Beyond 14 nm?
Moderators: Richard M. Silver, Bryan Barnes, National
Institute of Standards and Technology; Benjamin Bunday,
International SEMATECH

Poster Receptions
Convention Center Hall 2
Tuesday 26 February. . . . . . . . . . . . . . . . . 6:00 to 8:00 pm(Conferences 8679, 8680, 8683, 8684)
Tuesday Poster Reception Sponsor

The Exhibition will be open during the Poster Reception on
Tuesday only. Be sure to visit the exhibit booths during thistime for insight on what is new or coming soon!

Convention Center Hall 2
Wednesday 27 February. . . . . . . . . . . . . . 6:00 to 8:00 pm(Conferences 8681, 8682, 8685)
Wednesday Poster Reception Sponsors

Directed self-assembly (DSA), which combines lithographydefined pre-patterns with self-assembled phase-separated
polymers, has become a promising path to continue
the scaling of semiconductor devices. As a materialsbased resolution enhancement technique, DSA has been
demonstrated to augment the patterning capability of 193i,
EUV and E-beam lithography, and has begun to transition
from research labs to development lines in past two
years.  While there have been important advances on thematerials and process fronts, to enable DSA as a resolution
enhancement technology, more efforts are required inareas such as DSA-aware design and low defectivity.
The characteristic length and nature of phase-separated
polymers impose DSA-specific design restrictions anddesign-related defectivities. The integration of compact
DSA model into design and computational lithography
may facilitate the co-optimization of design, materials, andprocesses. On the defectivity front, more experimental dataon inspection, metrology and unit process monitoring areneeded to identify the defect sources and intrinsic DSA
defects. Please join experts in design, DFM, metrology,
and other critical areas in DSA to discuss these criticalchallenges for DSA.

Panel Discussion on Making a
Business Case for Disruptive Metrology
Technologies: What Should We Invest In?
Convention Center Room 230 B
Wednesday 27 February. . . . . . . . . . . . . . 7:30 to 9:00 pm
Moderators: Alok Vaid, GLOBALFOUNDRIES, Inc.;
Benjamin D. Bunday, SEMATECH North; Matthew J.
Sendelbach, Nova Measuring Instruments, Inc.
Continuing decrease in the device dimensions, combinedwith complex disruptive materials and 3D architectures
have placed increasing demands on metrology tools.
Over the years, the industry has implemented several
innovative solutions to alleviate these challenges, but mostof them have been incremental improvements rather thanrevolutionary. There seems to be inertia preventing the
adoption of revolutionary and disruptive measurement
techniques, some of which have been in the limelight for
about a decade. The panel will focus on three key disruptive
solutions which have been identified as potential nextgeneration metrology and inspection technologies for sometime – CD-SAXS, Multi-ebeam-based inspection, and He-ion
imaging. Our panel of experts will come from a mix of IC
manufacturers, suppliers, academia, research consortia andventure capitalist firms. Panelists will review the technical,
business and financial aspects of these technologies andalso try to form a consensus on whether they are reallyneeded to meet current industry requirements. The panel will
recommend whether the industry should continue to invest
in these technologies, and if so, then what it will “actually”
take to get them implemented in HVM.

Joint Panel Discussion
Convention Center Hall 3        All registered attendees are invited to attend the poster
sessions. Come view the high-quality papers that arepresented in this alternative format, and interact with theposter authors who will be available for discussion. Enjoy
light refreshments while networking with colleagues in yourfield.
Attendees and authors are required to wear theirconference registration badges to the poster sessions.

Tuesday 26 February. . . . . . . . . . . . . . . . . 7:30 to 9:00 pm
Joint Panel with conferences 8679, 8680, 8682, 8683, 8684

SPIE Advanced Lithography Promotional Partners
Mazik MediaMEMS and Nanotechnology Exchange
Photonics Media
Photonics Online
Solid State Technology

8

SPIE Advanced Lithography 2013·www.spie.org/alAward Announcements

SPIE Apps for iPhone
and Android™

®

Conference ProgramAward Announcements for Conference
on Metrology, Inspection, and Process
Control for MicrolithographyAward Announcements for Conference
on Advances in Resist Materials andProcessing Technology

Convention Center Room 230 B

Convention Center Hall 3

Monday 25 February . . . . . . . . . . . . . . 11:00 to 11:20 am

Monday 25 February. . . . . . . . . . . . . . . 11:00 to 11:20 am

Presentation of the 2012 Diana Nyyssonen
Memorial Award for Best Paper in Metrology
Award Sponsored byPresentation of the 2012 Hiroshi Ito Memorial
Award for the Best Student Paper in Resist

Android and iPhone®

Create your schedule—searchand browse the Technical
Program and special events,
participants, and exhibitors.

ProfilesPresentation of the 2012 C. Grant Willson
Award for Best Paper in Resist

These Awards Sponsored byPresentation of the 2013 Best Student
Paper Award in Metrology

iPhone®

Convention Center Room 230 B

Make valuable personalconnections— find andcontact colleagues based on
SPIE research publications,conference involvement, andcourses taught.

Thursday 28 February. . . . . . . . . . . . . . 10:30 to 10:40 amAward Sponsored byField Guides

Presentation of the 2012 Jeffrey Byers
Memorial Best Poster Award in Resist
Award Sponsored byAward Announcement for Conference
8683—Optical Microlithography

Android and iPhone®

Take Field Guides to a newlevel—access and use
equations, linked terms,
bookmarks, and interactive
figures, and take notes.
Try Geometrical Optics Field Guide Lite for Free!

Convention Center Room 210 C
Thursday 28 February. . . . . . . . . . . . . . 10:30 to 10:40 am

Presentation of the 2013 Best Student Awardin Microlithography

NewsroomAward Sponsored byAndroid and iPhone®

The latest innovations, news, and multimedia
coverage of Optics and Photonics.

iPhone and iTunes are registered trademarks of Apple Inc.

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9

Visit the exhibition. See the latest lithography
research and development, devices,
tools, fabrication, and services.
Exhibition

Convention Center Hall 1
Tuesday 26 February
10:00 am to 5:00 pm;
Poster reception:
6:00 to 8:00 pm
Wednesday 27 February
10:00 am to 4:00 pm

Exhibition
Technologies
Lithography: immersion,
double patterning, e-beam,
EUV, optical/laser, and RET
Metrology, inspection, OPC,
and process control
Design and manufacturingsoftwareMaterials and chemicals
Imaging equipment
LasersResist materials andprocessing
Nano-imprint
IC and chip fabrication
Nanoscale imaging
10

Ibss Group, Inc.
Inko Industrial Corp.
Inspectrology LLC
J.A. Woollam Co., Inc.
JSR Micro, Inc.
King Industries, Inc.
MEMS & Nanotechnology
Exchange
Mentor Graphics Corp.
Micro Lithography, Inc.
MicroChem Corp.
micro resist technology GmbH
Mirero Inc.
Mitsui Chemicals America, Inc.
Molecular Imprints, Inc.
Nanometrics Inc.
OMG Cyantek
Optical Support, Inc.
Opto Diode Corp.
Owens Design
Pall Corp.
Photonics Online

2013 Exhibiting Company list
(Current as of 1/21/2013)

Abeam Technologies
Amuneal Manufacturing Corp.
ASML
attocube systems Inc.
Benchmark Technologies
Brewer Science Inc.
Brion Technologies
Capitol Scientific Microfabrication
Materials
Carl Zeiss SMS GmbHDNS Electronics, LLC / SCREEN /SOKUDO
Energetiq Technology, Inc.
Fortrend Engineering
FUJIFILM Electronic Materials
GenISys GmbH
Gudeng Precision Industrial Co., Ltd.
Halocarbon Products Corporation
Heraeus Daychem

Contact SPIE Sales: Tel: +1 360 676 3290  ·  Fax: +1 360 647 1445   ·  teresar@spie.org

SPIE Advanced Lithography 2013·www.spie.org/alPozzetta
Qoniac GmbH
Rigaku Innovative Technologies Inc.
RION Co., Ltd.
Rudolph Technologies, Inc.
SAES Pure Gas
Sagem
Shin-Etsu MicroSi
Solid State Technology / Laser Focus
World
Storex Technologies
Sumika Electronic Materials
Synopsys Inc.
TNOTokyo Ohka Kogyo America, Inc.
TRIOPTICS GmbH
Vistec Electron Beam GmbH
Vistec Lithography, Inc.
XEI Scientific, Inc.
XyalisZygo Corporation

General Information
Exhibition Registration
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General Information
Onsite Services

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SPIE Advanced Lithography 2013

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am and 3:00 pm. Check individual conference listings forexact times and locations.
12

11:00 am to 2:00 pm
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·

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General Information
Fares
Driving Directions & Parking• Driving Directions (PDF)• Parking at San Jose McEnery Convention Center• Alternate Parking Nearby Convention Center• Parking Lot Map (PDF)• Contracted Hotels’ parking rates range from $21 - $26
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13

General Information
Wireless Internet Service Policy
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14

SPIE Advanced Lithography 2013·www.spie.org/alHall

Get Smart with Courses
at SPIE Advanced Lithography
Relevant training | Proven instructors | Education you need to staycompetitive in today’s job market· Choose from 14 courses and learn current approaches in EUV lithography, DSA,
optical lithography, FEOL/MOL/BEOL lithography, and more
· SPIE Student Members receive 50% off course registration· New courses in 2013 include Scatterometry and Applications in CD, OV and Focus
Control; Chemistry and Lithography; Understanding Design-Pattern Interactions· Earn CEUs to fulfill continuing professional education requirements

SUNDAYMONDAYTUESDAY

THURSDAYSC1099 Chemistry and Lithography(Okoroanyanwu) 8:30 am to 5:30 pm, $670 /$780

SC1030 Interaction of Physical
Design and Lithography (Yuan)
1:30 pm to 5:30 pm, $350 / $405

SC1101 Understanding
Design-Patterning
Interactions (Gupta, Mallik,
Torres) 1:30 pm to 5:30 pm,$350 / $405

SC103 Chemically Amplified
Resists (Willson) 8:30 am to 5:30
pm, $575 / $685

SC1009 Electron Beam Inspection Principles and Applications in IC and Mask
Manufacturing (Xiao) 8:30 am to 12:30 pm,$350 / $405

SC616 Practical Photoresist
Processing (Dammel) 8:30 am
to 12:30 pm, $350 / $405

SC888 EUV Lithography (Bakshi, Ahn, Naulleau)
8:30 am to 5:30 pm, $715 / $825
SC101 Introduction to Microlithography:
Theory, Materials, and Processing (Willson,
Bowden) 8:30 am to 5:30 pm, $575 / $685
SC116 Lithographic Optimization: A
Theoretical Approach (Mack) 8:30 am to 5:30
pm, $655 / $765

www.spie.org/education

Money-back Guarantee
We are confident that once you experience an
SPIE course for yourself you will look to us for yourfuture education needs. However, if for any reason
you are dissatisfied, we will gladly refund yourmoney. We just ask that you tell us what you did
not like; suggestions for improvement are always
welcome.

Continuing Education UnitsSPIE has been approved as an authorized providerof CEUs by IACET, The International Association
for Continuing Education and Training (Provider#1002091). In obtaining this approval, SPIE has
demonstrated that it complies with the ANSI/IACET Standards which are widely recognized as
standards of good practice.

SC992 Lithography Integration for
Semiconductor FEOL & BEOL Fabrication(Lin, Zhang) 8:30 am to 5:30 pm, $575 / $685
SC1066 Practical Modeling andComputational Lithography (Lai) 8:30 am to
5:30 pm, $575 / $685
SC885 Principles and Practical
Implementation of Multiple Patterning (Dusa,
Hsu) 8:30 am to 5:30 pm, $575 / $685

SPIE reserves the right to cancel a course
due to insufficient advance registration.

SC1067 Directed Self Assembly and its
Application to Nanoscale Fabrication (dePablo, Nealey, Ruiz) 1:30 pm to 5:30 pm, $350
/ $405
SC1100 Scatterometry and Applications in
CD, OV and Focus Control (Cramer, Turovets)
1:30 pm to 5:30 pm, $350 / $405

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15

Technical Conference Session Schedule
Conference 8679
Extreme Ultraviolet (EUV)
Lithography IV

Conference 8680
Alternative Lithographic
Technologies V

Monday 25 February

Conference 8681
Metrology, Inspection, and Process
Control for Microlithography XXVII
Opening Remarks and Award
Presentations · 11:00 to 11:20 am
Session 1 · Mon 11:20 am to 12:00 pm
Keynote Session

Session 1 · Mon 1:30 to 3:30 pm
Invited I
SessionTo
come 2 · Mon 4:00 to 6:00 pm
EUV Resists: Joint Session with
Conferences 8679 and 8682

Tuesday 26 February

Wednesday 27 February

Session 1 · Mon 3:35 to 5:35 pm
Keynote Session

Session 3 · Mon 3:50 to 5:40 pm
Design-based Metrology and Process Control

Session 2 · Tue 8:20 to 10:10 am
DSA Materials and Applications

Session 4 · Tue 8:00 to 10:10 am
Inspection

Session 4 · Tue 10:30 am to 12:10 pm
Mask I

Session 3 · Tue 10:30 am to 12:00 pm
UV Imprint Lithography

Session 5 · Tue 1:40 to 3:20 pm
Resist Outgassing

Session 4 · Tue 1:20 to 3:10 pm
DSA Materials and Processing: Joint Session
with Conference 8680 and 8682

Session 5 · Tue 10:40 am to 12:00 pm
Accelerated Development of Materials andProcesses: Joint Session with Conference
8681 and 8682

Session 6 · Tue 3:50 to 5:30 pm
Optics and Metrology

Session 5 · Tue 3:30 to 5:00 pm
E-Beam Direct-Write for High-Volume
Manufacturing I

Session 7 · Wed 8:00 to 9:40 am
OPC and Modeling

Session 6 · Wed 8:00 to 9:50 am
DSA Metrology and Inspection: Joint Session
with Conferences 8680 and 8681

Session 8 · Wed 8:00 to 9:50 am
DSA Metrology and Inspection: Joint Session
with Conferences 8680 and 8681

Session 7 · Wed 10:30 am to 12:00 pm
E-Beam Direct-Write for High-Volume
Manufacturing II

Session 9 · Wed 10:40 am to 12:00 pm
Optical Extensions

Session 8 · Wed 1:20 to 3:10 pm
Nanoimprint Applications

Session 10 · Wed 1:20 to 3:10 pm
LER/LWR

Session 9 · Wed 3:30 to 5:20 pm
Design for Manufacturability for DSA: Joint
Session with Conferences 8680 and 8684

Session 11 · Wed 3:40 to 5:40 pm
Overlay

Session 10 · Thu 8:00 to 10:10 am
DSA Vias

Session 12 · Thu 8:00 to 9:50 am
SEM, AFM, SPM

Session 11 · Thu 10:40 am to 11:50 am
Nanoprobe Array Direct-Write Technologies

Awards · Thu 10:30 to 10:40 am

Session 9 · Wed 1:40 to 3:20 pm
High NA and Magnification
Session 10 · Wed 3:50 to 5:50 pm
Mask II

Session 11 · Thu 8:30 am to 12:00 pm
Invited II

Session 12 · Thu 1:20 to 3:10 pm
E-Beam Direct-Write for High-Volume
Manufacturing III
16

Session 2 · Mon 1:30 to 3:20 pm
Metrology for Process Control

Session 3 · Tue 8:00 to 9:40 am

jillSources

Session 8 · Wed 10:10 am to 12:10 pm
EUV Resist

Thursday 28 February

Opening Remarks andIntroduction · 3:30 to 3:35 pm

Session 13 · Thu 3:30 to 5:00 pm
SPIE Advanced Lithography
2013 · www.spie.org/al
DSA Lines-Spaces

Session 6 · Tue 1:30 to 3:10 pm
New Horizons
Session 7 · Tue 3:40 to 5:40 pm
Scatterometry

Session 13 · Thu 10:40 to 12:10 pm
Cross-technology Comparisons, Hybrids, andAccuracy
Session 14 · Thu 1:40 to 3:20 pm
Process Control
Session 15 · Thu 3:50 to 5:00 pm
Late Breaking News

Technical Conference Session Schedule
Conference 8682
Advances in Resist Materials andProcessing Technology XXX

Conference 8683
Optical Microlithography XXVI

Conference 8684
Design for Manufacturability through
Design-Process Integration VI

Conference 8685
Advanced Etch Technology for
Nanopatterning II

Opening Remarks and Award
Presentations · 11:00 to 11:20 am
Session 1 · Mon 11:20 am to 12:30 pm
Keynote Session
Session 2 · Mon 2:00 to 3:40 pm
Novel Processing of Patterning Materials

Session 1 · Mon 1:30 to 3:10 pm
Litho and Plasma Etching Interaction

Session 3 · Mon 4:00 to 6:00 pm
EUV Resists: Joint Session with
Conferences 8679 and 8682

Session 2 · Mon 3:40 to 5:40 pm
Plasma/Resist Interaction and LER

Session 4 · Tue 8:00 to 10:00 am
Optical Extensions
Session 5 · Tue 10:40 am to 12:00 pm
Accelerated Development of Materials andProcesses: Joint Session with Conference
8681 and 8682
Session 6 · Tue 1:20 to 3:10 pm
DSA Materials and Processing: Joint
Session with Conference 8680 and 8682
Session 7 · Tue 3:40 to 5:40 pm
Negative Tone Patterning

Session 3 · Tue 8:30 to 10:10 am
Plasma Etching for Advanced
Technology Nodes

Opening Remarks · 8:20 to 8:40 am
Session 1 · Tue 8:40 to 10:00 am
Keynote Session

Session 4 · Tue 10:40 am to 12:00 pm
Memory Patterning

Session 2 · Tue 10:30 am to 12:10 pm
14nm and Beyond

Session 5 · Tue 1:30 to 3:10 pm
New Plasma Sources and New Etching
Technologies

Session 3 · Tue 1:40 to 3:20 pm
Source and Mask Optimization (SMO) I
Session 4 · Tue 3:50 to 5:30 pm
RET

Session 6 · Tue 3:40 to 5:10 pm
Emerging Patterning Technology

Session 8 · Wed 8:00 to 10:00 am
Novel Patterning Materials

Session 5 · Wed 8:00 to 10:00 am
Source and Mask Optimization (SMO) II

Session 9 · Wed 10:30 am to 12:10 pm
E-Beam Patterning Materials

Session 6 · Wed 10:30 to 11:50 am
Process Technology I

Session 10 · Wed 1:30 to 2:50 pm
EUV Materials, Processing, and Analysis

Session 7 · Wed 1:20 to 3:00 pm
Modeling

Session 11 · Wed 3:30 to 5:10 pm
Fundamental Studies of RLS Behavior

Session 8 · Wed 3:30 to 5:30 pm
Process Technology II

Opening Remarks · 8:10 to 8:20 am
Session 1 · Wed 8:20 to 10:05 am
Keynote Session
Session 2 · Wed 10:40 to 11:40 am
DFDP: Design for Multipatterning
Session 3 · Wed 1:40 to 3:00 pm
Design Rules and Routing
Session 4 · Wed 3:30 to 5:20 pm
Design for Manufacturability for DSA:
Joint Session with Conferences 8680 and
8684

Session 9 · Thu 8:00 to 10:00 am
Optical and DFM I: Joint Session with
Conferences 8683 and 8684

Session 5 · Thu 8:00 to 10:00 am
Optical and DFM I: Joint Session with
Conferences 8683 and 8684

Session 10 · Thu 10:40 am to 12:00 pm
Optical and DFM II: Joint Session with
Conferences 8683 and 8684

Session 6 · Thu 10:40 am to 12:00 pm
Optical and DFM II: Joint Session with
Conferences 8683 and 8684

Session 11 · Thu 1:20 to 3:00 pm
Simulation

Session 7 · Thu 1:20 to 3:00 pm
Design Implications and Variability

Session 12 · Thu 3:30
to 5:30+1 360676pm
3290
Tooling

Session 8 ·· Thu
3:30 to 4:30 pm· help@spie.org#SPIELitho
Algorithms for DFM

17

(EUV) Lithography IV

Lithographic

Conference 8679

Conference 8680

Conference 8681

Conference 8682

Mon.–Thur. 25–28 February 2013
Proceedings of SPIE Vol. 8679

Mon.–Thur. 25–28 February 2013
Proceedings of SPIE Vol. 8680

Mon.–Thur. 25–28 February 2013
Proceedings of SPIE Vol. 8681

Mon.–Wed. 25–27 February 2013
Proceedings of SPIE Vol. 8682

Extreme Ultraviolet(EUV) Lithography IV

Alternative
Lithographic
Technologies V

Metrology, Inspection,
and Process Control
for Microlithography
XXVII

Advances inResist Materials
and Processing
Technology XXX

Conference Chair: Alexander Starikov, I&I
Consulting (United States)

Conference Chair: Mark H. Somervell,Tokyo Electron America, Inc. (United States)

Conference Co-Chair: Jason P. Cain, Advanced
Micro Devices, Inc. (United States)

Conference Co-Chair: Thomas I. Wallow,
GLOBALFOUNDRIES Inc. (United States)

Program Committee: Ofer Adan, Applied
Materials (Israel); John A. Allgair,
GLOBALFOUNDRIES Inc. (United States);
Masafumi Asano, Toshiba Corp. (Japan);
Benjamin D. Bunday, SEMATECH North(United States); Alek C. Chen, ASML Taiwan
Ltd. (Taiwan); Shaunee Y. Cheng, IMEC
(Belgium); Timothy F. Crimmins, Intel Corp.
(United States); Daniel J. C. Herr, The Univ. ofNorth Carolina at Greensboro (United States);
Chih-Ming Ke, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan); Shunsuke
Koshihara, Hitachi High-Technologies Corp.
(Japan); Yi-sha Ku, Industrial Technology
Research Institute (Taiwan); Byoung-Ho Lee,SAMSUNG Electronics Co., Ltd. (Korea,
Republic of); Christopher J. Raymond,
Nanometrics Inc. (United States); John C.
Robinson, KLA-Tencor Corp. (United States);
Martha I. Sanchez, IBM Almaden Research
Ctr. (United States); Matthew J. Sendelbach,
Nova Measuring Instruments, Inc. (UnitedStates); Richard M. Silver, National Instituteof Standards and Technology (United States);
Costas J. Spanos, Univ. of California, Berkeley(United States); Vladimir A. Ukraintsev,
Nanometrology International, Inc. (UnitedStates); Alok Vaid, GLOBALFOUNDRIES Inc.
(United States)

Program Committee: Robert Allen, IBM
Almaden Research Ctr. (United States);
Ramakrishnan Ayothi, JSR Micro, Inc.
(United States); George G. Barclay, Dow
Advanced Materials (United States); Luisa
D. Bozano, IBM Almaden Research Ctr.
(United States); Sean D. Burns, IBM Corp.
(United States); Ralph R. Dammel, AZElectronic Materials USA Corp. (UnitedStates); Roel Gronheid, IMEC (Belgium);
Douglas Guerrero, Brewer Science, Inc.
(United States); Clifford L. Henderson,
Georgia Institute of Technology (UnitedStates); Christoph K. Hohle, FraunhoferCtr. Nanoelektronische Technologien(Germany); Scott W. Jessen, Texas
Instruments Inc. (United States); Yoshio
Kawai, Shin-Etsu Chemical Co., Ltd.
(Japan); Qinghuang Lin, IBM Thomas
J. Watson Research Ctr. (United States);
Nobuyuki N. Matsuzawa, Sony Corp.
(Japan); Dah-Chung Owe-Yang, ShinEtsu MicroSi, Inc. (United States); Daniel
P. Sanders, IBM Almaden Research
Ctr. (United States); Plamen Tzviatkov,
FUJIFILM Electronic Materials U.S.A., Inc.
(United States); Todd R. Younkin, Intel
Corp. (Belgium)

Conference Chair: Patrick P. Naulleau,
Lawrence Berkeley National Lab. (United States)
Conference Co-Chair: Obert R. Wood II,
GLOBALFOUNDRIES Inc. (United States)
Program Committee: Markus Bender, Advanced
Mask Technology Ctr. GmbH Co. KG (Germany);
Jos P. Benschop, ASML Netherlands B.V.
(Netherlands); Robert L. Brainard, Collegeof Nanoscale Science & Engineering, Univ. at
Albany (United States); Li-Jui Chen, Taiwan
Semiconductor Manufacturing Co. Ltd. (Taiwan);
Daniel A. Corliss, IBM Corp. (United States);
Emily E. Gallagher, IBM Corp. (United States);
Michael Goldstein, SEMATECH North (UnitedStates); Frank Goodwin, SEMATECH North(United States); Naoya Hayashi, Dai Nippon
Printing Co., Ltd. (Japan); Soichi Inoue, EUVL
Infrastructure Development Ctr., Inc. (Japan); Bryan
S. Kasprowicz, Photronics, Inc. (United States);
Seong-Sue Kim, SAMSUNG Electronics Co.,
Ltd. (Korea, Republic of); Bruno La Fontaine,
Cymer, Inc. (United States); Michael J. Lercel,
SEMATECH North (United States); Ted Liang, Intel
Corp. (United States); Akira Miyake, Canon Inc.
(Japan); Hiroaki Morimoto, Toppan Printing Co.,
Ltd. (Japan); Katsuhiko Murakami, Nikon Corp.
(Japan); Chris Ngai, Applied Materials, Inc. (UnitedStates); Shinji Okazaki, Gigaphoton Inc. (Japan);Uzodinma Okoroanyanwu, GLOBALFOUNDRIES
Inc. (Germany); Eric M. Panning, Intel Corp.
(United States); Jan Hendrik Peters, Carl Zeiss
SMS GmbH (Germany); Jorge J. Rocca, Colorado
State Univ. (United States); Kurt G. Ronse, IMEC
(Belgium); Tsutomu Shoki, HOYA Corp. (Japan);
Stanley E. Stokowski, KLA-Tencor Corp. (UnitedStates); Anna V. Tchikoulaeva, Lasertec U.S.A.,
Inc. Zweigniederlassung Deutschland (Germany);Thomas I. Wallow, GLOBALFOUNDRIES Inc.
(United States); Jeong-Ho Yeo, SAMSUNGElectronics Co., Ltd. (Korea, Republic of); Masaki
Yoshioka, XTREME technologies GmbH (Germany)

Conference Chair: William M. Tong, KLATencor Corp. (United States)
Conference Co-Chair: Douglas J. Resnick,
Molecular Imprints, Inc. (United States)
Program Committee: Christopher Bencher,
Applied Materials, Inc. (United States); Joy Y.
Cheng, IBM Almaden Research Ctr. (UnitedStates); Juan J. de Pablo, Univ. of WisconsinMadison (United States); Elizabeth A. Dobisz,
Hitachi Global Storage Technologies, Inc.
(United States); Timothy R. Groves, Univ.
at Albany (United States); Cynthia Hanson,
Space and Naval Warfare Systems Ctr. Pacific(United States); Daniel J. C. Herr, The Univ. ofNorth Carolina at Greensboro (United States);
Tatsuhiko Higashiki, Toshiba Corp. (Japan);James A. Liddle, National Institute of Standards
and Technology (United States); Shy-Jay
Lin, Taiwan Semiconductor Manufacturing
Co. Ltd. (Taiwan); Lloyd C. Litt, SEMATECHNorth (United States), GLOBALFOUNDRIES
Inc. {United States); Hans Loeschner, IMS
Nanofabrication AG (Austria); John G. Maltabes,
Hewlett-Packard Labs. (United States); Laurent
Pain, CEA-LETI (France); Ivo W. Rangelow,
Technische Univ. Ilmenau (Germany); Benjamen
M. Rathsack, Tokyo Electron America, Inc.
(United States); Ricardo Ruiz, Hitachi Global
Storage Technologies, Inc. (United States);Frank M. Schellenberg, Consultant (UnitedStates); Ines A. Stolberg, Vistec Electron Beam
Lithography Group (Germany); Kevin T. Turner,
Univ. of Pennsylvania (United States); JamesJ. Watkins, Univ. of Massachusetts Amherst(United States); Marco Wieland, MAPPER
Lithography (Netherlands); Wei Wu, Univ. ofSouthern California (United States)for Microlithography

Conference Sponsor

Conference Sponsor

Conference Sponsor

18

SPIE Advanced Lithography 2013·www.spie.org/alResist Materials

Conference Sponsor

XXV

Manufacturability

Technology forConference 8683

Conference 8684

Conference 8685

Tue.–Thur. 26–28 February 2013
Proceedings of SPIE Vol. 8683

Wed.–Thur. 27–28 February 2013
Proceedings of SPIE Vol. 8684

Mon.–Tue. 25–26 February 2013
Proceedings of SPIE Vol. 8685

OpticalMicrolithography XXVIDesign for
Advanced Etch
Manufacturability
Technology forthrough DesignNanopatterning II
Chair: Ying Zhang, Taiwan
Process Integration VII Conference
Semiconductor Manufacturing Co. Ltd.

XXVI

Conference Chair: Will Conley, Cymer, Inc.
(United States)
Conference Co-Chair: Kafai Lai, IBM Corp.
(United States)
Program Committee: Pary Baluswamy,
Micron Technology, Inc. (United States);Peter D. Brooker, Synopsys, Inc. (UnitedStates); Peter D. Buck, Toppan Photomasks,
Inc. (United States); Andreas Erdmann,
Fraunhofer-Institut für Integrierte System und
Bauelementetechnologie (Germany); Nigel
R. Farrar, Cymer, Inc. (United States); Jo
Finders, ASML Netherlands B.V. (Netherlands);
Carlos Fonseca, Tokyo Electron America,
Inc. (United States); Tsai-Sheng Gau, Taiwan
Semiconductor Manufacturing Co. Ltd.
(Taiwan); Bernd Geh, Carl Zeiss SMT Inc.
(United States); Yuri Granik, Mentor Graphics
Corp. (United States); Sachiko Kobayashi,
Toshiba Corp. (Japan); Jongwook Kye,
GLOBALFOUNDRIES Inc. (United States);
Sukjoo Lee, SAMSUNG Electronics Co.,
Ltd. (Korea, Republic of); Wilhelm Maurer,
Infineon Technologies AG (Germany); Soichi
Owa, Nikon Corp. (Japan); Xuelong Shi,
Semiconductor Manufacturing International
Corp. (China); Sam Sivakumar, Intel Corp.
(United States); Bruce W. Smith, Rochester
Institute of Technology (United States);
Kazuhiro Takahashi, Canon Inc. (Japan);Geert Vandenberghe, IMEC (Belgium)

Conference Chair: Mark E. Mason, Texas
Instruments Inc. (United States)

Conference Co-Chair: John L. Sturtevant,Mentor Graphics Corp. (United States)
Program Committee: Robert Aitken, ARM
Inc. (United States); Jason P. Cain, Advanced
Micro Devices, Inc. (United States); Luigi
Capodieci, GLOBALFOUNDRIES Inc. (UnitedStates); Juan-Antonio Carballo, Broadcom
Corp. (United States); Lars W. Liebmann,
IBM Corp. (United States); Andrew R.
Neureuther, Univ. of California, Berkeley(United States); David Z. Pan, The Univ. of
Texas at Austin (United States); Chul-Hong
Park, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of); Michael L. Rieger, Synopsys,
Inc. (United States); Vivek K. Singh, Intel Corp.
(United States); Chi-Min Yuan, Freescale
Semiconductor, Inc. (United States)(Taiwan)
Conference Co-Chairs: Gottlieb S. Oehrlein,
Univ. of Maryland, College Park (UnitedStates); Qinghuang Lin, IBM Thomas J.
Watson Research Ctr. (United States)
Program Committee: Julie Bannister, Tokyo
Electron America, Inc. (United States); Maxime
Darnon, LTM CNRS (France); Sebastian U.
Engelmann, IBM Thomas J. Watson Research
Ctr. (United States); Eric A. Hudson, Lam
Research Corp. (United States); Catherine
B. Labelle, GLOBALFOUNDRIES Inc. (UnitedStates); Nae-Eung Lee, Sungkyunkwan
Univ. (Korea, Republic of); Seiji Samukawa,Tohoku Univ. (Japan); Denis Shamiryan,
GLOBALFOUNDRIES Dresden Module Two,GmbH & Co. KG (Germany); Jeff Xu, Taiwan
Semiconductor Manufacturing Co. Ltd.
(Taiwan); Anthony Yen, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan)
Conference Sponsor

Conference Sponsor+1 360 676 3290

· help@spie.org·#SPIELitho

19

Monday 25 February

Conference 8681

Conference 8682

Metrology, Inspection,
and Process Control for
Microlithography XXVIIAdvances in Resist Materials
and Processing Technology
XXX
Room: Conv. Ctr. Hall 3
11:00 am to 11:20 am

Room: Conv. Ctr. 230 B
11:00 am to 11:20 am
Opening Remarks and Award
Presentation
Session Chairs: Alexander Starikov, I&I
Consulting (United States); Jason P. Cain,
Advanced Micro Devices, Inc. (United States)
Presentation of the Diana Nyyssonen Memorial
Award for Best Paper in Metrology
Award Sponsored by

Opening Remarks
Session Chairs: Mark H. Somervell, Tokyo
Electron America, Inc. (United States); Thomas I.
Wallow, GLOBALFOUNDRIES Inc. (United States)
Conference BusinessAward Presentations
Presentation of the 2012 C. Grant Willson Award
for Best Paper in Resist
Presentation of the 2012 Hiroshi Ito Memorial
Award for the Best Student Paper in Resist
These Two Awards Sponsored by

Session 1
Room: Conv. Ctr. 230 B
Mon 11:20 am to 12:00 pm
Keynote Session

Presentation of the 2012 Jeffrey Byers Memorial
Best Poster Award in Resist
Award Sponsored by

Session Chairs: Alexander Starikov, I&I
Consulting (United States); Jason P. Cain,
Advanced Micro Devices, Inc. (United States)
11:20 am: Metrology in times of shrinking budgets(Keynote Presentation), William H. Arnold, ASML US,
Inc. (United States) . . . . . . . . . . . . . . . . . . .  [8681-1]

Session 1
Room: Conv. Ctr. Hall 3
Mon 11:20 am to 12:30 pm

Lunch Break . . . . . . . . . . Mon 12:00 pm to 1:30 pm

Keynote Session
Session Chairs: Mark H. Somervell, Tokyo
Electron America, Inc. (United States); Thomas I.
Wallow, GLOBALFOUNDRIES Inc. (United States)
11:20 am: The evolving complexity of patterningmaterials (Keynote Presentation), Tsutomu Shimokawa,
JSR Corp. (Japan); Yoshi Hishiro, JSR Micro, Inc.
(United States); Yoshikazu Yamaguchi, Motoyuki Shima,
Tooru Kimura, Yoshio Takimoto, Tomoki Nagai, JSR
Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-1]
11:55 am: Optimization of a virtual EUV photoresist
for the trade-off between throughput and CDU(Keynote Presentation), Mark D. Smith, John J. Biafore,
Trey Graves, Stewart A. Robertson, KLA-Tencor Texas(United States). . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-2]
Lunch Break . . . . . . . . . . . . . Mon 12:30 pm to 2:00 pm

20

SPIE Advanced Lithography 2013·www.spie.org/al

Monday 25 February

Conference 8679

Conference 8681

Conference 8682

Conference 8685

Extreme Ultraviolet (EUV)
Lithography IV

Metrology, Inspection,
and Process Control for
Microlithography XXVIIAdvances in Resist Materials
and Processing Technology
XXX

Advanced Etch Technology
for Nanopatterning II

Session 2
Room: Conv. Ctr. 230 B
Mon 1:30 pm to 3:20 pm

Session 2
Room: Marriott San Jose Ballroom Salon III
Mon 2:00 pm to 3:40 pm

Session 1
Room: Conv. Ctr. 211 B
Mon 1:30 pm to 3:10 pm

Novel Processing of Patterning
Materials

Litho and Plasma Etching
Interaction

Session Chairs: Dah-Chung Owe-Yang, ShinEtsu MicroSi, Inc. (United States); Nobuyuki
N. Matsuzawa, Sony Corp. (Japan)

Session Chairs: Catherine B. Labelle,
GLOBALFOUNDRIES Inc. (United States);
Rich Wise, IBM Corp. (United States)

2:00 pm: Sustainable scaling technique on
double-patterning process, Hidetami Yaegashi,
Kenichi Oyama, Tokyo Electron Ltd. (Japan); Shohei
Yamauchi, Arisa Hara, Sakurako Natori, Tokyo
Electron AT Ltd. (Japan); Masatoshi Yamato, Tokyo
Electron Ltd. (Japan). . . . . . . . . . . . . . . . . .  [8682-3]

1:30 pm: Why Moore’s Law is counting on etch!
(Keynote Presentation), Vivek K. Singh, Intel Corp.
(United States). . . . . . . . . . . . . . . . . . . . . . .  [8685-1]

Session 1
Room: Conv. Ctr. 210 B
Mon 1:30 pm to 3:30 pm
Invited I

Metrology for Process Control

Session Chairs: Jos P. Benschop, ASML
Netherlands B.V. (Netherlands); Shinji
Okazaki, Gigaphoton Inc. (Japan)

Session Chairs: Masafumi Asano, Toshiba
Corp. (Japan); John C. Robinson, KLA-Tencor
Corp. (United States)

1:30 pm: EUV in HVM: prospects and challenges(Invited Paper), Sam Sivakumar, Intel Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-1]

1:30 pm: Implementation of hybrid metrology at
HVM fab for 20nm and beyond (Invited Paper),Alok Vaid, Lokesh Subramany, Liping Cui, Carl
Ford, John A. Allgair, Gaurav Agrawal, John Taylor,
GLOBALFOUNDRIES Inc. (United States); Carsten
Hartig, Peter Ebersbach, GLOBALFOUNDRIES
Dresden Module Two, GmbH & Co. KG (Germany);
Paul K. Isbester, Charles Kang, Hyang Kyun H. Kim,
Cornel Bozdog, Nova Measuring Instruments Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . .  [8681-2]

2:00 pm: Effect of blank quality on EUVL
imaging for 2X node (Invited Paper), Su-Young
Lee, Tae-Geun Kim, Sang-Hyun Kim, Hwan-Seok
Seo, Seong-Sue Kim, Chan-Uk Jeon, SAMSUNGElectronics Co., Ltd. (Korea, Republic of). .  [8679-2]
2:30 pm: Investigation of EUV pellicle feasibility(Invited Paper), Luigi Scaccabarozzi, Dan Smith,Pedro Rizo Diago, ASML Netherlands B.V.
(Netherlands); Eric Casimiri, ASML Netherlands
BV (Netherlands); Nina V. Dziomkina, Henk Meijer,
ASML Netherlands B.V. (Netherlands) . . . .  [8679-3]
3:00 pm: EUV resist materials design for 15nm
half pitch and below (Invited Paper), Hideaki
Tsubaki, Shinji Tarutani, Naoki Inoue, Hiroo
Takizawa, Takahiro Goto, FUJIFILM Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-4]
Coffee Break. . . . . . . . . . . Mon 3:30 pm to 4:00 pm

2:00 pm: On-product overlay enhancement
using advanced litho-cluster control based on
integrated metrology, ultra-small DBO targets
and novel corrections, Kaustuve Bhattacharyya,
ASML Netherlands B.V. (Netherlands); Chih-Ming
Ke, Taiwan Semiconductor Manufacturing Co., Ltd.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-3]
2:20 pm: Toward 7nm target on productoverlay for 28nm FDSOI technology, Bertrand
LeGratiet, Maxime Gatefait, Pierre-Jerome Goirand,
STMicroelectronics (France); Richard J. F. Van
Haren, Xing Lan Liu, Maya Doytcheva, ASML
Netherlands B.V. (Netherlands); Anne Pastol,
ASML Montbonnot (France); Jan Beltman, ASML
Netherlands B.V. (Netherlands). . . . . . . . . .  [8681-4]
2:40 pm: Introduction of next-generation 3D AFM
for advanced process control, Johann Foucher,Romain Thérèse, CEA-LETI (France); YongHa Paul
Lee, Sang-il Park, Sang-Joon Cho, Park Systems
Corp. (Korea, Republic of). . . . . . . . . . . . . .  [8681-5]

2:20 pm: Dry development rinse process (DDRP)
and material (DDRM) for novel pattern collapse
free process, Rikimaru Sakamoto, Yasushi
Sakaida, Nissan Chemical Industries, Ltd. (Japan);Bang-Ching Ho, Nissan Chemical Industries, Ltd.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-4]
2:40 pm: Post-litho line-width roughness
smoothing by ion implantations, Tristan Y. Ma,
Peng Xie, Ludovic Godet, Patrick M. Martin, Chris
Campbell, Jun Xue, Liyan Miao, Yongmei Chen,
Huixiong Dai, Christopher Bencher, Chris S. Ngai,
Applied Materials, Inc. (United States) . . . .  [8682-5]

2:10 pm: Extension of patterning technologies
down to sub-10nm half pitch (Invited Paper), Shoji
Mimotogi, Toshiba Materials Co., Ltd.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-2]
2:40 pm: Etch correction, and OPC: A look at thecurrent state and future etch correction (Invited
Paper), Ian Stobert, Derren Dunn, IBM Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-3]
Coffee Break. . . . . . . . . . . Mon 3:10 pm to 3:40 pm

3:00 pm: Precuring implant photoresists forshrink and patterning control, Gustaf Lars
Winroth, Erik Rosseel, Christie Delvaux, Efrain
Altamirano-Sánchez, Monique Ercken, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-6]
3:20 pm: Application specific ratings forlithography process filters, Toru Umeda, Shuichi
Tsuzuki, Nihon Pall Ltd. (Japan) . . . . . . . . .  [8682-7]
Coffee Break. . . . . . . . . . . Mon 3:40 pm to 4:00 pm

3:00 pm: Automated high-volume processmonitoring of FEOL 22nm FinFET structuresusing a TEM, Roger Alvis, Michael Strauss, David
Horspool, Ozan Ugurlu, Pavel Plachinda, Huikai
Cheng, Corey Senowitz, Jeff Blackwood, David
Foord, FEI Co. (United States) . . . . . . . . . .  [8681-6]
Coffee Break. . . . . . . . . . . Mon 3:20 pm to 3:50 pm+1 360 676 3290

· help@spie.org·#SPIELitho21

Monday 25 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 2
Room: Conv. Ctr. 210 B
Mon 4:00 pm to 6:00 pm
EUV Resists: Joint Session with
Conferences 8679 and 8682
Session Chairs: Robert L. Brainard, College of
Nanoscale Science & Engineering, Univ at Albany (UnitedStates); George G. Barclay, Dow Advanced Materials(United States)
4:00 pm: Oxide nanoparticle EUV resists: toward
understanding the mechanism of positive and negative
tone patterning, Marie E. Krysak, Markos Trikeriotis, Christine
Y. Ouyang, Souvik Chakrabarty, Emmanuel P. Giannelis,
Christopher K. Ober, Cornell Univ. (United States). . . [8679-5]
4:20 pm: Novel EUV resist materials and process for 20nm
half-pitch and beyond, Ken Maruyama, Ramakrishnan Ayothi,
Yoshi Hishiro, JSR Micro, Inc. (United States); Motohiro
Shiratani, Tooru Kimura, JSR Corp. (Japan). . . . . . . [8682-38]
4:40 pm: Effect of leaving group design on EUV lithography
performance, Owendi Ongayi, Vipul  Jain, Suzanne M. Coley,
Mike D. Wagner, James F. Cameron, James W. Thackeray,
Dow Electronic Materials (United States). . . . . . . . . . [8679-6]
5:00 pm: The novel solution for negative impact of out-ofband and outgassing by top coat materials in EUVL, Noriaki
Fujitani, Rikimaru Sakamoto, Takafumi Endo, Nissan Chemical
Industries, Ltd. (Japan); Ryuji Onishi, Nissan Chemical
Industries, Ltd. (Japan) and EUVL Infrastructure Development
Ctr., Inc. (Japan); Hiroaki Yaguchi, Nissan Chemical Industries,
Ltd. (Japan) and IMEC (Belgium); Bang-Ching Ho, Nissan
Chemical Industries, Ltd. (Taiwan) . . . . . . . . . . . . . . . [8682-9]

Room: Conv. Ctr. Hall 3
3:30 pm to 3:35 pm
Opening Remarks and Introduction

Session 3
Room: Conv. Ctr. 230 B
Mon 3:50 pm to 5:40 pm

Session Chairs: William M. Tong, KLA-Tencor
Corp. (United States); Douglas J. Resnick,
Molecular Imprints, Inc. (United States)

Design-based Metrology andProcess Control
Session Chairs: Jason P. Cain, Advanced
Micro Devices, Inc. (United States); Shunsuke
Koshihara, Hitachi High-Technologies Corp.
(Japan)Session 1
Room: Conv. Ctr. Hall 3
Mon 3:35 pm to 5:35 pm

4:15 pm: NIL Template : progress and challenges(Keynote Presentation), Naoya Hayashi, Dai Nippon
Printing Co., Ltd. (Japan). . . . . . . . . . . . . . .  [8680-2]

3:50 pm: Material contrast-based inline metrology:
process verification and control using backscattered electron imaging on CD-SEM (Invited
Paper), Ofer Adan, Applied Materials (Israel); Carsten
Hartig, Daniel Fischer, GLOBALFOUNDRIES Dresden
Module Two, GmbH & Co. KG (Germany); Alok Vaid,
Abner Bello, GLOBALFOUNDRIES Inc. (United States);
Shimon Levi, Applied Materials (Israel); Adam Ge,
Jessica Zhou, Applied Materials, Inc. (United States);
Maayan Bar-Zvi, Applied Materials (Israel). . .  [8681-7]

4:55 pm: Electron multibeam technology formask and wafer writing (Keynote Presentation),
Elmar Platzgummer, IMS Nanofabrication AG(Austria). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-3]

4:20 pm: When things go pear shaped: contour
variations of contacts, Clemens S. Utzny, Advanced
Mask Technology Ctr. GmbH Co. KG(Germany) . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-8]

Keynote Session
3:35 pm: Directed self-assembly of block
copolymers for pattern generation (Keynote
Presentation), Caroline A. Ross, Massachusetts
Institute of Technology (United States). . . .  [8680-1]

4:40 pm: Measurement technology to quantify 2D
pattern shape in sub-2xnm advanced lithography,
Daisuke Fuchimoto, Hitachi High-Technologies Corp.
(Japan); Peter De Bisschop, Jeroen Van de Kerkhove,
IMEC (Belgium); Hitoshi Sugahara, Hiroyuki Shindo,
Hideo Sakai, Hitachi High-Technologies Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-9]

5:20 pm: Secondary electrons in EUV lithography, Irina
Bocharova, Sanjana Das, Ryan Del Rey, Yudhishthir P. Kandel,College of Nanoscale Science & Engineering, Univ. at Albany(United States); Angela Paolucci, College of Nanoscale Science& Engineering, Univ. of Albany (United States); Leonidas E.
Ocola, Argonne National Lab. (United States); Carl Ventrice,
College of Nanoscale Science & Engineering, Univ. at Albany(United States); Robert A. Bartynski, Rutgers, The State Univ.
of New Jersey (United States); Gregory Denbeaux, Robert L.
Brainard, College of Nanoscale Science & Engineering, Univ. at
Albany (United States). . . . . . . . . . . . . . . . . . . . . . . . . [8679-7]

5:00 pm: Defect window analysis by using SEMcontour-based shape quantifying method for sub20nm node production, J. F. Lin, Jiarui Hu, Chih-Ming
Ke, Taiwan Semiconductor Manufacturing Co., Ltd.
(Taiwan); Daisuke Hibino, Hitachi High-Technologies
Corp (Japan); Ming-yi Hsu, Hitachi High-Technologies
Corp. (Taiwan); Hiroyuki Shindo, Yuuji Enomoto,Hitachi High-Technologies Corp. (Japan). . .  [8681-10]
5:20 pm: A framework for exploring the interaction
between design rules and overlay control, Rani
S. Ghaida, Mukul Gupta, Puneet Gupta, Univ. of
California, Los Angeles (United States). . . . .  [8681-11]

5:40 pm: Rectification of EUV-patterned contact holes
using directed self assembly, Roel Gronheid, IMEC (Belgium);
Todd R. Younkin, Intel Corp. (United States); Arjun Singh, IMEC
(Belgium) and Katholieke Univ. Leuven (Belgium); Paulina A.
Rincon Delgadillo, IMEC (Belgium) and Katholieke Univ. Leuven(Belgium) and The Univ. of Chicago (United States); Paul F.
Nealey, The Univ. of Chicago (United States); Kathleen Nafus,
Ainhoa Romo-Negreira, Mark H. Somervell, Tokyo Electron
America, Inc. (United States). . . . . . . . . . . . . . . . . . . [8682-10]

22

SPIE Advanced Lithography 2013·www.spie.org/al

Monday 25 February

Conference 8682

Conference 8685

Advances in Resist Materials andProcessing Technology XXX

Advanced Etch Technology for
Nanopatterning II

Session 3
Room: Conv. Ctr. 210 B
Mon 4:00 pm to 6:00 pm

Session 2
Room: Conv. Ctr. 211 B
Mon 3:40 pm to 5:40 pm

EUV Resists: Joint Session with
Conferences 8679 and 8682

Plasma/Resist Interaction and LER

Session Chairs: Robert L. Brainard, College of Nanoscale
Science & Engineering, Univ at Albany (United States);
George G. Barclay, Dow Advanced Materials (UnitedStates)Session Chairs: Gottlieb S. Oehrlein, Univ.
of Maryland, College Park (United States);
Erwine Pargon, LTM CNRS (France)
3:40 pm: Toward an integrated line-edge
roughness understanding: metrology,
characterization, and plasma etching transfer(Invited Paper), Evangelos Gogolides, Vassilios
Constantoudis, George Kokkoris, National Ctr. for
Scientific Research Demokritos (Greece). .  [8685-4]

4:00 pm: Oxide nanoparticle EUV resists: toward understanding
the mechanism of positive and negative tone patterning,Marie E. Krysak, Markos Trikeriotis, Christine Y. Ouyang, Souvik
Chakrabarty, Emmanuel P. Giannelis, Christopher K. Ober, Cornell
Univ. (United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-5]
4:20 pm: Novel EUV resist materials and process for 20nm halfpitch and beyond, Ken Maruyama, Ramakrishnan Ayothi, Yoshi
Hishiro, JSR Micro, Inc. (United States); Motohiro Shiratani, Tooru
Kimura, JSR Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . [8682-38]
4:40 pm: Effect of leaving group design on EUV lithography
performance, Owendi Ongayi, Vipul  Jain, Suzanne M. Coley,
Mike D. Wagner, James F. Cameron, James W. Thackeray, Dow
Electronic Materials (United States). . . . . . . . . . . . . . . . . . .  [8679-6]
5:00 pm: The novel solution for negative impact of out-of-band
and outgassing by top coat materials in EUVL, Noriaki Fujitani,
Rikimaru Sakamoto, Takafumi Endo, Nissan Chemical Industries,
Ltd. (Japan); Ryuji Onishi, Nissan Chemical Industries, Ltd. (Japan)
and EUVL Infrastructure Development Ctr., Inc. (Japan); Hiroaki
Yaguchi, Nissan Chemical Industries, Ltd. (Japan) and IMEC
(Belgium); Bang-Ching Ho, Nissan Chemical Industries, Ltd.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-9]
5:20 pm: Secondary electrons in EUV lithography, Irina
Bocharova, Sanjana Das, Ryan Del Rey, Yudhishthir P. Kandel,College of Nanoscale Science & Engineering, Univ. at Albany(United States); Angela Paolucci, College of Nanoscale Science &Engineering, Univ. of Albany (United States); Leonidas E. Ocola,
Argonne National Lab. (United States); Carl Ventrice, College of
Nanoscale Science & Engineering, Univ. at Albany (United States);
Robert A. Bartynski, Rutgers, The State Univ. of New Jersey(United States); Gregory Denbeaux, Robert L. Brainard, College of
Nanoscale Science & Engineering, Univ. at Albany (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-7]
5:40 pm: Rectification of EUV-patterned contact holes using
directed self assembly, Roel Gronheid, IMEC (Belgium); Todd R.
Younkin, Intel Corp. (United States); Arjun Singh, IMEC (Belgium)and Katholieke Univ. Leuven (Belgium); Paulina A. Rincon Delgadillo,
IMEC (Belgium) and Katholieke Univ. Leuven (Belgium) and The
Univ. of Chicago (United States); Paul F. Nealey, The Univ. of
Chicago (United States); Kathleen Nafus, Ainhoa Romo-Negreira,Mark H. Somervell, Tokyo Electron America, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-10]

4:10 pm: Plasma influence on the attenuation ofline-width roughness of EUV photoresist lines
ranging from 40 to 22nm half pitch (Invited Paper),Efrain Altamirano-Sánchez, Peter  De Schepper,
Terje  Hansen, Werner Boullart, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-5]
4:40 pm: Ar and He plasma pretreatments
of model organic masking materials for
performance improvement during plasma
pattern transfer, Dominik Metzler, Florian
Weilnboeck, Nick Fox-Lyon, Gottlieb S. Oehrlein,
Univ. of Maryland, College Park (United States);
Sebastian U. Engelmann, Robert L. Bruce, IBM
Thomas J. Watson Research Ctr. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-6]
5:00 pm: Line-edge and width roughness
mitigation at 22nm half pitch: the effect of H2/
Ar plasma, Peter De Schepper, Alessandro Vaglio
Pret, Terje Hansen, Efrain Altamirano-Sánchez,
Werner Boullart, Stefan De Gendt, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-7]
5:20 pm: Characterization methodology tosupport process development of advanced
patterning structures, Shailendra Mishra,
Alok Vaid, Chang H. Maeng, Dae-Han Choi,
Hyunchul Jung, Liping Cui, Meng Luo, Yongjun
Shi, Thaung-Tun Oo, WenPin Peng, Yue Hu,
GLOBALFOUNDRIES Inc. (United States); Cornel
Bozdog, Paul K. Isbester, Nova Measuring
Instruments Inc. (United States); Oded Cohen, Nova
Measuring Instruments Ltd. (Israel) . . . . .  [8685-22]+1 360 676 3290

· help@spie.org·#SPIELitho23

Tuesday 26 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 3
Room: Conv. Ctr. 210 B
Tue 8:00 am to 9:40 am

Session 2
Room: Conv. Ctr. Hall 3
Tue 8:20 am to 10:10 am

Session 4
Room: Conv. Ctr. 230 B
Tue 8:00 am to 10:10 am

Sources

DSA Materials and Applications

Session Chairs: Li-Jui Chen, Taiwan
Semiconductor Manufacturing Co. Ltd.
(Taiwan); Michael J. Lercel, SEMATECHNorth (United States)

Session Chairs: Ricardo Ruiz, HGST (UnitedStates); Christopher Bencher, Applied
Materials, Inc. (United States)

Session Chairs: Benjamin D. Bunday,
SEMATECH North (United States); Timothy F.
Crimmins, Intel Corp. (United States)

8:20 am: Sequential infiltration synthesis inlithography (Invited Paper), Jeffrey W. Elam, Seth
B. Darling, Yu-Chih Tseng, Qing Peng, Joseph A.
Libera, Anil Mane, Leonidas E. Ocola, Argonne
National Lab. (United States). . . . . . . . . . . . . [8680-4]

8:00 am: Inline e-beam metrology: the end of an era
for image-based critical dimensional metrology?
new life for defect metrology (Invited Paper), Eric
Solecky, Andrew Stamper, Srinivasan Rangarajan,
Arun Srivatsa, Daniel S. Fischer, Oliver D. Patterson,
Erin McLellan, IBM Corp. (United States); Alok Vaid,
GLOBALFOUNDRIES Inc. (United States); Carsten
Hartig, GLOBALFOUNDRIES Dresden Module Two,GmbH & Co. KG (Germany); Benjamin D. Bunday,
Abraham Arceo, SEMATECH North (United States); Ralf
Buengener, Danica Smith, GLOBALFOUNDRIES Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . [8681-12]
8:30 am: Enhancing 9nm node dense patterned
defect optical inspection using polarization, angle,
and focus, Bryan M. Barnes, Yeung-Joon Sohn, HuiZhou, Francois Goasmat, Richard M. Silver, National
Institute of Standards and Technology (United States);
Abraham Arceo, SEMATECH North (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-13]
8:50 am: Capturing buried defects in metalinterconnections with electron-beam inspection
system, Hong Xiao, Ximan  Jiang, Mike Van Riet, David
Trease, Shishir Ramprasad, Pierre Lefebvre, Anadi
Bhatia, Chris A. Maher, Olivier Moreau, David Bastard,
Paul  MacDonald, Cecelia Campochiaro, KLA-Tencor
Corp. (United States) . . . . . . . . . . . . . . . . . . [8681-14]
9:10 am: 22nm node wafer inspection using
diffraction phase microcopy and image postprocessing, Renjie Zhou, Lynford Goddard, Gabriel
Popescu, Univ. of Illinois at Urbana-Champaign (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-15]
9:30 am: Application of DBM tool for detection of
EUV mask defect, Gyun Yoo, SK Hynix, Inc. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . . . . [8681-16]
9:50 am: Tabletop coherent diffraction imaging EUV
microscope for EUV lithography inspection, Bosheng
Zhang, Matthew D. Seaberg, Daniel E. Adams, Dennis
F. Gardener, Margaret M. Murnane, Henry C. Kapteyn,
Univ. of Colorado at Boulder (United States).[8681-17]
Coffee Break. . . . . . . . . . . Tue 10:10 am to 10:40 am

8:00 am: EUVL: A reality in the making, Masaki
Yoshioka, Rolf Apetz, Jeroen Jonkers, Yusuke
Teramoto, XTREME technologies GmbH (Germany);
Felix Kuepper, Fraunhofer-Institut für Lasertechnik(Germany); Olivier R. Semprez, XTREME
technologies GmbH (Germany). . . . . . . . . .  [8679-8]
8:20 am: High CE technology EUV source for
HVM, Hakaru Mizoguchi, Gigaphoton Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-9]
8:40 am: Advances in computer simulationsof LPP sources for EUV lithography, Ahmed
Hassanein, Tatyana Sizyuk, Purdue Univ. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-10]
9:00 am: Lifetime and refurbishment of multilayer
LPP collector mirrors, Torsten Feigl, Marco
Perske, Hagen Pauer, Tobias Fiedler, Sergiy Yulin,
Norbert Kaiser, Andreas Tünnermann, FraunhoferInstitut für Angewandte Optik und Feinmechanik(Germany); Norbert R. Bowering, Alex I. Ershov,Silvia De Dea, Kay Hoffmann, Bruno La Fontaine,
Igor V. Fomenkov, David C. Brandt, Cymer, Inc.
(United States). . . . . . . . . . . . . . . . . . . . . .  [8679-12]
9:20 am: Contamination concerns at theintermediate focus of an extreme-ultraviolet
light source, David N. Ruzic, John Sporre, Dan
Elg, Davide Curreli, Univ. of Illinois at UrbanaChampaign (United States). . . . . . . . . . . .  [8679-13]
Coffee Break. . . . . . . . . . . Tue 9:40 am to 10:30 am

8:50 am: Scaling-down lithographic dimensions
with block-copolymer materials: 10nm-sizedfeatures with PS-b-PMMA, Xavier Chevalier,Arkema S.A. (France) and CEA-LETI-Minatec(France); Célia Nicolet, Arkema S.A. (France) and
LCPO (France); Raluca Tiron, Jonathan Pradelles,
Ahmed Gharbi, CEA-LETI-Minatec (France); Maxime
Argoud, CEA-LETI (France); Michael Delalande,
Gilles Cunge, LTM-CNRS (France); Guillaume Fleury,
Georges Hadziioannou, LCPO (France); Christophe
Navarro, Arkema S.A. (France). . . . . . . . . . . . [8680-5]
9:10 am: Block copolymer orientation control
using a top-coat surface treatment, Takehiro
Seshimo, Tokyo Ohka Kogyo America, Inc. (UnitedStates); Carlton Grant Willson, The Univ. of Texas
at Austin (United States); Hiroshi Jinnai, Kyushu
Univ. (Japan); Christopher J. Ellison, Christopher M.
Bates, Michael J. Maher, William J. Durand, Julia D.
Cushen, Leon M. Dean, Gregory Blachut, The Univ.
of Texas at Austin (United States) . . . . . . . . . [8680-6]
9:30 am: Modeling the rate of morphology
evolution during annealing of block copolymer
thin films, Jeffrey D. Weinhold, Phillip D. Hustad, The
Dow Chemical Co. (United States); Peter Trefonas III,Dow Electronic Materials (United States). . . . [8680-7]
9:50 am: Healing LER using directed self
assembly: treatment of an EUVL resist withaqueous solutions of block copolymers, Idriss
Blakey, Ya-Mi Chuang, Han-Hao Elliot Cheng,
Kevin S. Jack, Andrew K. Whittaker, The Univ. of
Queensland (Australia) . . . . . . . . . . . . . . . . . . [8680-8]
Coffee Break. . . . . . . . . . . Tue 10:10 am to 10:30 am

24

Inspection

SPIE Advanced Lithography 2013·www.spie.org/alTuesday 26 February

Conference 8682

Conference 8683

Conference 8685

Advances in Resist Materials
and Processing Technology
XXX

Optical Microlithography
XXVI

Advanced Etch Technology for
Nanopatterning II

Session 4
Room: Marriott San Jose Ballroom Salon III
Tue 8:00 am to 10:00 am

Room: Conv. Ctr. 210 C
8:20 am to 8:40 am

Optical Extensions

Session Chairs: Will Conley, Cymer, Inc.
(United States); Kafai Lai, IBM Corp. (UnitedStates)Session Chairs: Christoph K. Hohle, Fraunhofer-Ctr.
Nanoelektronische Technologien (Germany); Robert
Allen, IBM Almaden Research Ctr. (United States)
8:00 am: Process variability of self-aligned multiple
patterning, Kenichi Oyama, Arisa Hara, Sakurako Natori,
Shohei Yamauchi, Masatoshi Yamato, Tokyo Electron AT Ltd.
(Japan); Hidetami Yaegashi, Tokyo Electron Ltd.
(Japan) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-11]
8:20 am: 20nm VIA BEOL patterning challenges, Chien-Hsien
S. Lee, Xiang Hu, Wontae Hwang, Hui Husan Tsai, Matthew T.
Herrick, Yayi Wei, GLOBALFOUNDRIES Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-13]
8:40 am: Feasibility study of resist slimming for Mx SIT,
Nicole Saulnier, Chiew-Seng Koay, Matthew Colburn, IBM
Corp. (United States); David R. Hetzer, TEL Technology Ctr.,
America, LLC (United States); Michael J. Cicoria, Tokyo
Electron America, Inc. (United States); Jonathan Ludwicki, TEL
Technology Ctr., America, LLC (United States); Masayoshi
Tagami, Renesas Electronics Corp. (Japan). . . . . . . . . [8682-14]
9:00 am: Bottom up/top down high-resolution, highthroughput lithography using vertically assembled blockbrush polymers, Karen L. Wooley, Guorong Sun, Sangho Cho,
Corrie Clark, Michael Heller, Ang Li, Adriana Pavía-Jiménez,Emile A. Schweikert, Texas A&M Univ. (United States); Peter
Trefonas III, James W. Thackeray, Dow Electronic Materials(United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-37]

Session 3
Room: Conv. Ctr. 211 B
Tue 8:30 am to 10:10 am

Opening Remarks

Session 1
Room: Conv. Ctr. 210 C
Tue 8:40 am to 10:00 am
Keynote Session
Session Chairs: Will Conley, Cymer, Inc.
(United States); Kafai Lai, IBM Corp. (UnitedStates)8:40 am: The increasing pain of scaling with 193i:
Where does it hurt? How much more can weendure? (Keynote Presentation), Lars W. Liebmann,
IBM Corp. (United States). . . . . . . . . . . . . .  [8683-1]
9:20 am: The advent of 3D system-on-chip
integration (Keynote Presentation), Eric Beyne,
IMEC (Belgium). . . . . . . . . . . . . . . . . . . . . .  [8683-2]
Coffee Break. . . . . . . . . . Tue 10:00 am to 10:30 am

Plasma Etching for Advanced
Technology Nodes
Session Chairs: Sebastian U. Engelmann,
IBM Thomas J. Watson Research Ctr. (UnitedStates); Maxime Darnon, LTM CNRS (France)
8:30 am: Advanced plasma etch for the 10nm
node and beyond (Invited Paper), Eric A. Joseph,
IBM Thomas J. Watson Research Ctr. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-8]
9:00 am: A new method based on AFM for the
study of photoresist sidewall smoothening and
LER transfer during gate patterning for advanced
technological nodes (Invited Paper), Marc
Fouchier, Erwine Pargon, Laurent M. Azarnouche,
Melisa Brihoum, Benjamin Bardet, LTM CNRS(France). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-9]
9:30 am: 15nm HP patterning with EUV and
SADP: key contributors for improvement of
LWR, LER, and CDU, Kaidong Xu, Laurent Souriau,
IMEC (Belgium); David Hellin, Lam Research Corp.
(Belgium); Janko Versluijs, Patrick Wong, Diziana
Vangoidsenhoven, Nadia Vandenbroeck, Harold
Dekkers, Xiaoping Shi, Johan Albert, Chi Lim Tan,
IMEC (Belgium); Johan Vertommen, Lam Research
Corp. (Belgium); Isabelle Orain, Yoshie Kimura, Lam
Research Corp. (United States); Vincent Wiaux,
Werner Boullart, IMEC (Belgium). . . . . . . .  [8685-10]
9:50 am: Tall FIN formation for FINFET devicesof 20nm and beyond using multi-cycles ofpassivation and etch processes, Dae-Han Choi,
Dae Geun Yang, Puneet Khanna, Chang Ho Maeng,
Owen Hu, Hongliang Shen, Andy Wei, Sung Kim,
GLOBALFOUNDRIES Inc. (United States). [8685-11]

9:20 am: Robust photoresist prepatterns for directed self
assembly, Takehiko Naruoka, Yoshi Hishiro, JSR Micro, Inc.
(United States); Yuusuke Anno, JSR Micro N.V. (Belgium); Shinya Minegishi, Yuji Namie, Tomoki Nagai, Yoshikazu Yamaguchi,
JSR Engineering Co., Ltd. (Japan); Melia Tijo, Hoa Truong,
Joy Y. Cheng, Daniel P. Sanders, IBM Almaden Research Ctr.
(United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-15]

Coffee Break. . . . . . . . . . Tue 10:10 am to 10:40 am

9:40 am: Combining physical resist modeling and selfconsistent field theory for pattern simulation in directed
self assembly, Michael Reilly, Dow Advanced Materials (UnitedStates); Valeriy V. Ginzburg, The Dow Chemical Co. (UnitedStates); Mark D. Smith, KLA-Tencor Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-16]
Coffee Break. . . . . . . . . . . . . . . . . . .  Tue 10:00 am to 10:40 am+1 360 676 3290

· help@spie.org·#SPIELitho25

Tuesday 26 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 4
Room: Conv. Ctr. 210 B
Tue 10:30 am to 12:10 pm

Session 3
Room: Conv. Ctr. Hall 3
Tue 10:30 am to 12:00 pm

Session 5
Room: Conv. Ctr. 230 B
Tue 10:40 am to 12:00 pm
Accelerated Development ofMaterials and Processes: Joint
Session with Conference 8681
and 8682

Mask IUV Imprint Lithography

Session Chairs: Frank Goodwin, SEMATECHNorth (United States); Naoya Hayashi, Dai
Nippon Printing Co., Ltd. (Japan)

Session Chairs: Douglas J. Resnick,
Molecular Imprints, Inc. (United States);
Tatsuhiko Higashiki, Toshiba Corp. (Japan)

10:30 am: Dressed-photon nanopolishing for EUV
mask substrate defect mitigation, Ranganath
Teki, Arun J. Kadaksham, Frank Goodwin,
SEMATECH North (United States); Takashi Yatsui,
Motoichi Ohtsu, The Univ. of Tokyo(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-14]

10:30 am: Thermally-modulated, multi-sitealignment control for nanoimprinting, Euclid
E. Moon, Massachusetts Institute of Technology(United States); Saurabh A. Chandorkar, Intel Corp.
(United States); Roger W. Pease, Stanford Univ.
(United States). . . . . . . . . . . . . . . . . . . . . . .  [8680-9]

10:50 am: EUV mask defect analysis from mask
to wafer printing, Yoonsuk Hyun, SK Hynix,
Inc. (Korea, Republic of); Jongsu Lee, Hynix
Semiconductor Inc. (Korea, Republic of) .  [8679-15]

11:00 am: Single-digit nanofabrication by UV
step-and-repeat nanoimprint lithography,
Christophe Peroz, Giuseppe Calafiore, abeamTechnologies, Inc. (United States); Scott D. Dhuey,
Nerea Alayo, David Gosselin, The MolecularFoundry (United States); Marko Volger, micro resist
technology GmbH (Germany); Deidre L. Olynick,Stefano Cabrini, The Molecular Foundry (UnitedStates) . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-10]

11:10 am: Investigation of native phase defectprintability and comparisons of actinic printing
and advanced simulation for 22nm HP EUV
Masks, Il Yong Jang, Jenah Harris-Jones,
Ranganath Teki, Vibhu Jindal, Frank Goodwin,
SEMATECH North (United States) . . . . . .  [8679-16]
11:30 am: EUV actinic blank inspection: fromprototype to production, Anna V. Tchikoulaeva,
Lasertec U.S.A., Inc. Zweigniederlassung
Deutschland (Germany); Hiroki Miyai, Kiwamu
Takehisa, Tomohiro Suzuki, Haruhiko Kusunose,
Lasertec Corp. (Japan); Hidehiro Watanabe,
Ichiro Mori, Soichi Inoue, EUVL Infrastructure
Development Ctr., Inc. (Japan). . . . . . . . .  [8679-17]
11:50 am: E-beam defect inspection of EUV
reticles and wafers, Scott D. Halle, IBM Corp.
(United States); Fei Wang, Hermes-MicrovisionInc., USA (United States); Ravi Bonam, IBM Corp.
(United States); Hung-Yu Tien, Hermes-MicrovisionInc., USA (United States); Karen D. Badger,
Zhengqing J. Qi, Emily E. Gallagher, Daniel A.
Corliss, IBM Corp. (United States); Chiyan Kuan,
Wei Fang, Jack Y. Jau, Hermes-Microvision Inc.,
USA (United States). . . . . . . . . . . . . . . . . .  [8679-18]

11:20 am: Defect reduction for semiconductor
memory applications using jet and flash imprint
lithography, Zhengmao Yang, Kang Luo, Xiaoming
Lu, Brian Fletcher, Weijun Liu, Frank Y. Xu, Dwayne
L. LaBrake, Douglas J. Resnick, S. V. Sreenivasan,
Molecular Imprints, Inc. (United States) . .  [8680-11]
11:40 am: Novel fluorinated compounds forreleasing material in nanoimprint lithography,
Tsuneo Yamashita, Hisashi Mitsuhashi, Masamichi
Morita, Daikin Industries, Ltd. (Japan). . . .  [8680-12]
Lunch/Exhibition Break. . . Tue 12:00 pm to 1:20 pm

Session Chairs: Clifford L. Henderson,
Georgia Institute of Technology (UnitedStates); Martha I. Sanchez, IBM Almaden
Research Ctr. (United States)
10:40 am: In situ dissolution analysis of halfpitch line and space patterns at various resist
platforms using high-speed atomic force
microscopy, Julius Joseph S. Santillan, Toshiro
Itani, EUVL Infrastructure Development Ctr., Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-17]
11:00 am: Mechanisms of resist pattern size
shrinkage caused by electron beam, Seiichi
Tagawa, Osaka Univ. (Japan) and JST-CREST(Japan); Cong Que Dinh, Satoshi Enomoto, Akihiro
Oshima, Japan Science and Technology Agency(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-18]
11:20 am: Photoresist shrinkage effects in 16nm
node EUV photoresist targets, Benjamin D.
Bunday, Cecilia Montgomery, SEMATECH North(United States). . . . . . . . . . . . . . . . . . . . . .  [8681-18]
11:40 am: Precise measurement of photoresist
cross-sectional shape change caused by SEMinduced shrinkage, Takeyoshi Ohashi, Tomoko
Sekiguchi, Atsuko Yamaguchi, Junichi Tanaka,
Hitachi, Ltd. (Japan); Hiroki Kawada, Hitachi HighTechnologies Corp. (Japan) . . . . . . . . . . .  [8681-19]
Lunch/Exhibition Break. . . Tue 12:00 pm to 1:30 pm

Lunch/Exhibition Break. . . Tue 12:10 pm to 1:40 pm

26

SPIE Advanced Lithography 2013·www.spie.org/alTuesday 26 February

Conference 8682

Conference 8683

Conference 8685

Advances in Resist Materials
and Processing Technology
XXX

Optical Microlithography
XXVI

Advanced Etch Technology for
Nanopatterning II

Session 5
Room: Conv. Ctr. 230 B
Tue 10:40 am to 12:00 pm

Session 2
Room: Conv. Ctr. 210 C
Tue 10:30 am to 12:10 pm

Accelerated Development ofMaterials and Processes: Joint
Session with Conference 8681
and 8682

14nm and Beyond

Memory Patterning

Session Chairs: Jongwook Kye,
GLOBALFOUNDRIES Inc. (United States); TsaiSheng Gau, Taiwan Semiconductor Manufacturing
Co. Ltd. (Taiwan)

Session Chairs: Julie Bannister, Tokyo
Electron America, Inc. (United States); NaeEung Lee, Sungkyunkwan Univ. (Korea,
Republic of)

10:30 am: Computational aspects of optical lithography
extension by directed self assembly, Kafai Lai, Chi-Chun
Liu, IBM Corp. (United States); Jed W. Pitera, Joy Y. Cheng,Charles T. Rettner, IBM Almaden Research Ctr. (UnitedStates); Daniel Dechene, IBM Corp. (United States); Gregory
S. Doerk, Moutaz Fakhry, IBM Almaden Research Ctr. (UnitedStates); Jassem Abdallah, Neal V. Lafferty, IBM Corp. (UnitedStates); Hsinyu Tsai, IBM Thomas J. Watson Research Ctr.
(United States); Michael A. Guillorn, IBM Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-3]

10:40 am: Patterning and etch challenges
for future DRAM and other high-aspect ratio
memory device fabrication (Invited Paper), Neal R.
Rueger, A. J. Schrinsky, F. Good, A. McGinnis, M.
Kiehlbauch, Micron Technology, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-12]

Session Chairs: Clifford L. Henderson,
Georgia Institute of Technology (UnitedStates); Martha I. Sanchez, IBM Almaden
Research Ctr. (United States)
10:40 am: In situ dissolution analysis of halfpitch line and space patterns at various resist
platforms using high-speed atomic force
microscopy, Julius Joseph S. Santillan, Toshiro
Itani, EUVL Infrastructure Development Ctr., Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-17]
11:00 am: Mechanisms of resist pattern size
shrinkage caused by electron beam, Seiichi
Tagawa, Osaka Univ. (Japan) and JST-CREST(Japan); Cong Que Dinh, Satoshi Enomoto, Akihiro
Oshima, Japan Science and Technology Agency(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-18]
11:20 am: Photoresist shrinkage effects in 16nm
node EUV photoresist targets, Benjamin D.
Bunday, Cecilia Montgomery, SEMATECH North(United States). . . . . . . . . . . . . . . . . . . . . .  [8681-18]
11:40 am: Precise measurement of photoresist
cross-sectional shape change caused by SEMinduced shrinkage, Takeyoshi Ohashi, Tomoko
Sekiguchi, Atsuko Yamaguchi, Junichi Tanaka,
Hitachi, Ltd. (Japan); Hiroki Kawada, Hitachi HighTechnologies Corp. (Japan) . . . . . . . . . . .  [8681-19]
Lunch/Exhibition Break. . . Tue 12:00 pm to 1:30 pm

Session 4
Room: Conv. Ctr. 211 B
Tue 10:40 am to 12:00 pm

10:50 am: Sub-12nm logic optical lithography with 4x
pitch division and SMO-lite, Michael C. Smayling, Tela
Innovations, Inc. (United States); Koichiro Tsujita, Canon Inc.
(Japan); Hidetami Yaegashi, Tokyo Electron Ltd. (Japan);
Valery Axelrad, Sequoia Design Systems, Inc. (United States);
Tadashi Arai, Canon Inc. (Japan); Kenichi Oyama, Arisa Hara,
Tokyo Electron Ltd. (Japan). . . . . . . . . . . . . . . . . . . . . [8683-4]
11:10 am: Impact of process decisions on overlay budget
for the 14nm node, David Laidler, Koen D’havé, Philippe
J. Leray, Jan V. Hermans, Juergen Boemmels, Shaunee Y.
Cheng, IMEC (Belgium); Huixiong Dai, Yongmei Chen, Chris
S. Ngai, Applied Materials, Inc. (United States) . . . . . [8683-5]
11:30 am: The impact of 14nm photomask uncertainties
on computational lithography solutions, John L.
Sturtevant, Edita Tejnil, Timothy Lin, Steffen Schultze,
Mentor Graphics Corp. (United States); Franklin D. Kalk,
Peter D. Buck, Ken Nakamura, Toppan Photomasks,
Inc. (United States); GuoXiang Ning, Paul W. Ackmann,
GLOBALFOUNDRIES Inc. (United States); Christian Buergel,Fritz Gans, Advanced Mask Technology Ctr. GmbH Co. KG(Germany). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-6]

11:10 am: STTMRAM patterning challenges(Invited Paper), Werner Boullart, Dunja Radisic,
IMEC (Belgium); Vasile  Paraschiv, Etch Tech
Solutions (Romania); Koichi Yatsuda, Tokyo ElectronLtd. (Japan); Eiichi Nishimura, Tokyo Electron AT
Ltd. (Japan); Tetsuya Ohishi, Tokyo Electron Miyagi
Ltd. (Japan); Shigeru Tahara, Tokyo Electron Miyagi(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-13]
11:40 am: An experimental study of VUV plasma
damage on porous organo-silicon glassmaterials, Jean-Francois G. N. de Marneffe, IMEC
(Belgium); Mikolaj Lukaszewicz, IMEC (Belgium)and Wroclaw Univ. (Poland); Liping Zhang, Markus
Heyne, IMEC (Belgium) and Katholieke Univ. Leuven(Belgium); Mikhail R. Baklanov, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-14]
Lunch/Exhibition Break. . . Tue 12:00 pm to 1:30 pm

11:50 am: Triple patterning with polygon stitching:scalability and compliance for metal 1 at the 14nm node,
Christopher M. Cork, Synopsys SARL (France); Alexander
Miloslavsky, Yong Li, Kevin Lucas, Synopsys, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-7]
Lunch/Exhibition Break. . . . . . . . Tue 12:10 pm to 1:40 pm+1 360 676 3290

· help@spie.org·#SPIELitho27

Tuesday 26 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 5
Room: Conv. Ctr. 210 B
Tue 1:40 pm to 3:20 pm

Session 4
Room: Conv. Ctr. Hall 3
Tue 1:20 pm to 3:10 pm

Resist Outgassing

DSA Materials and Processing: Joint
Session with Conference 8680 and 8682

Session Chairs: Soichi Inoue, EUVL
Infrastructure Development Ctr., Inc. (Japan);
Kurt G. Ronse, IMEC (Belgium)
1:40 pm: Relationship between resist outgassing
and witness sample contamination in the NXEoutgas qualification using electrons and EUV, Ivan
Pollentier, Ragava Lokasani, Roel Gronheid, IMEC
(Belgium); Shannon B. Hill, Charles Tarrio, Thomas
B. Lucatorto, National Institute of Standards andTechnology (United States) . . . . . . . . . . . . . [8679-19]
2:00 pm: Resist outgassing contamination
growth comparison using photon and electronresist exposure, Alexander Friz, IBM Almaden
Research Ctr. (United States) and SEMATECH Inc.
(United States); Karen E. Petrillo, Jaewoong Sohn,
SEMATECH North (United States). . . . . . . . [8679-20]
2:20 pm: Study of EUV outgassing spatial
distribution toward witness plate in the EUV
outgas tester, Yukiko Kikuchi, Hiroyuki Tanaka,Toshiya Takahashi, Kazuhiro Katayama, Isamu
Takagi, Norihiko Sugie, Eishi Shiobara, Soichi Inoue,
EUVL Infrastructure Development Ctr., Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8679-21]
2:40 pm: Correlation of electron- and EUVinduced optics contamination from resist outgas
species other than C: composition and efficacy
of atomic-H cleaning, Shannon B. Hill, National
Institute of Standards and Technology (UnitedStates); Nadir S. Faradzhev, Howard Fairbrother,
Michael Barclay, Johns Hopkins Univ. (UnitedStates); Robert F. Berg, Charles Tarrio, Thomas
B. Lucatorto, National Institute of Standards andTechnology (United States) . . . . . . . . . . . . . [8679-22]
3:00 pm: Balancing lithographic performance andoutgassing in EUV photoresists, Shu-Hao Chang,
TSMC Taiwan (Taiwan); Shu-Fang Chen, Ying-Yu
Chen, Taiwan Semiconductor Manufacturing Co.
Ltd. (Taiwan); Ming-Chin Chien, National Chiao
Tung Univ. (Taiwan); Shang-Chieh Chien, TSMC
Taiwan (Taiwan); Jui-Ching Wu, Tzu-Lih Lee, Taiwan
Semiconductor Manufacturing Co. Ltd. (Taiwan);Jack J. H. Chen, Anthony Yen, TSMC Taiwan(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8679-23]
Cofee Break . . . . . . . . . . . . . Tue 3:20 pm to 3:50 pm

28

Session 6
Room: Conv. Ctr. 230 B
Tue 1:30 pm to 3:10 pm
New Horizons

Session Chairs: Joy Y. Cheng, IBM Almaden Research
Ctr. (United States); Ralph R. Dammel, AZ Electronic
Materials USA Corp. (United States)

Session Chairs: Richard M. Silver, National
Institute of Standards and Technology (UnitedStates); Costas J. Spanos, Univ. of California,
Berkeley (United States)

1:20 pm: Advances in directed self-assembly integrationand manufacturability at 300mm (Invited Paper), Benjamen M.
Rathsack, Mark H. Somervell, Tokyo Electron America, Inc. (UnitedStates); Makato  Muramatsu, Keiji  Tanouchi, Takahiro  Kitano,
Tokyo Electron Kyushu Ltd. (Japan); Eiichi  Nishimura, Tokyo
Electron Miyagi Ltd. (Japan); Koichi  Yatsuda, Seiji Nagahara,
Hiroyuki Iwaki, Keiji  Akai, Mariko  Ozawa, Ainhoa Romo-Negreira,
Shigeru Tahara, Tokyo Electron Ltd. (Japan); Kathleen Nafus,
Tokyo Electron America, Inc. (Japan). . . . . . . . . . . . . . .  [8682-19]

1:30 pm: Critical dimension small-angle x-ray
scattering measurements of FinFET and 3D memory
structures, Charles Settens, College of Nanoscale
Science & Engineering (United States); Benjamin D.
Bunday, SEMATECH North (United States); R. Joseph
Kline, Daniel F. Sunday, Chengqing Wang, Wen-li Wu,
National Institute of Standards and Technology (UnitedStates); Richard Matyi, Univ. at Albany (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-20]

1:50 pm: Chemical epitaxy of strongly segregating block
copolymers with top-coats for assembling perpendicularly
oriented lamella with sub-10nm dimensions, Hiroshi Yoshida,
Hitachi, Ltd. (Japan); Jeong In Lee, Univ. of Wisconsin-Madison(United States); Hyo Seon Suh, Univ. of Chicago (United States);
Yoshihito Ishida, Lei Wan, Abelardo R. Hernandez, Univ. of
Wisconsin-Madison (United States); Kouhei Aida, Yasuhiko Tada,
Hitachi, Ltd. (Japan); Juan J. de Pablo, Paul F. Nealey, Univ. of
Chicago (United States). . . . . . . . . . . . . . . . . . . . . . . . .  [8680-13]

1:50 pm: Mueller-based scatterometry measurementof nanoscale structures with anisotropic in-plane
optical properties, Gangadhara Raja Muthinti, Manasa
Medikonda, Univ. at Albany (United States); Jody
Fronheiser, Vimal K. Kamineni, GLOBALFOUNDRIES
Inc. (United States); Brennan L. Peterson, Joseph Race,
Nanometrics Inc. (United States); Alain C. Diebold, Univ.
at Albany (United States). . . . . . . . . . . . . . . . . . [8681-21]

2:10 pm: New materials in DSA processing with reduced
line-edge roughness, Rahul Sharma, Jessica P. Evans, The Dow
Chemical Co. (United States); Shih-Wei Chang, Dow Electronic
Materials (United States); John W. Kramer, Phillip D. Hustad,Valeriy V. Ginzburg, Jeffrey D. Weinhold, Daniel J. Murray, The
Dow Chemical Co. (United States); Peter Trefonas III, Dow
Electronic Materials (UnitedStates) . . . . . . . . . . . . . . . .  [8680-14]
2:30 pm: Progress in directed self-assembly hole shrink
applications, Todd R. Younkin, Intel Corp. (Belgium); Roel
Gronheid, Paulina Rincon Delgadillo, Boon Teik Chan, IMEC
(Belgium); Ainhoa Romo-Negreira, Tokyo Electron Europe Ltd.
(Netherlands); Kathleen Nafus, Mark H. Somervell, Tokyo Electron
America, Inc. (United States) . . . . . . . . . . . . . . . . . . . . .  [8682-20]
2:50 pm: Materials and processes enabling block copolymers
for lithographic applications, Guanyang Lin, Yi Cao, Hengpeng
Wu, Jian Yin, SungEun Hong, Margareta Paunescu, Jane Wan,
Orest Polishchuk, AZ Electronic Materials USA Corp. (UnitedStates); Ankit Vora, Melia Tjio, Anindarupa Chunder, Joy Y. Cheng,
Daniel P. Sanders, IBM Almaden Research Ctr. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-15]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . . Tue 3:10 pm to 3:30 pm

SPIE Advanced Lithography 2013·

2:10 pm: Probing limits of acoustic nanometrology
using coherent extreme-ultraviolet light, Damiano
Nardi, Kathleen Hoogeboom-Pot, Univ. of Colorado at
Boulder (United States); Jorge N. Hernandez-Charpak,
Univ. of Colorado (United States); Marie K. Tripp, Sean
W. King, Intel Corp. (United States); Erik H. Anderson,
Lawrence Berkeley National Lab. (United States);Margaret M. Murnane, Henry C. Kapteyn, Univ. ofColorado at Boulder (United States). . . . . . . . . [8681-22]
2:30 pm: Nanoscale modulus and surface chemistrycharacterization for collapse free resists, Prashant K.
Kulshreshtha, Lawrence Berkeley National Lab. (UnitedStates); Ken  Maruyama, JSR Micro, Inc. (United States);
Sara Kiani, Lawrence Berkeley National Lab. (UnitedStates); James M. Blackwell, Intel Corp. (United States);
Deidre L. Olynick, Paul D. Ashby, Lawrence Berkeley
National Lab. (United States). . . . . . . . . . . . . . .[8681-23]
2:50 pm: Photoluminescence metrology for LED
characterization in high-volume manufacturing,
Zhiqiang Li, Christopher J. Raymond, Nanometrics Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . [8681-24]
Coffee Break. . . . . . . . . . . . . . .  Tue 3:10 pm to 3:40 pm

www.spie.org/alTuesday 26 February

Conference 8682

Conference 8683

Conference 8685

Advances in Resist Materials
and Processing Technology
XXX

Optical Microlithography
XXVI

Advanced Etch Technology for
Nanopatterning II

Session 6
Room: Conv. Ctr. Hall 3
Tue 1:20 pm to 3:10 pm

Session 3
Room: Conv. Ctr. 210 C
Tue 1:40 pm to 3:20 pm

Session 5
Room: Conv. Ctr. 211 B
Tue 1:30 pm to 3:10 pm

DSA Materials and Processing: Joint
Session with Conference 8680 and 8682

Source and Mask Optimization(SMO) INew Plasma Sources and New
Etching Technologies

Session Chairs: Joy Y. Cheng, IBM Almaden Research
Ctr. (United States); Ralph R. Dammel, AZ Electronic
Materials USA Corp. (United States)

Session Chairs: Andreas Erdmann,
Fraunhofer-Institut für Integrierte Systeme
und Bauelementetechnologie IISB (Germany);
Bruce W. Smith, Rochester Institute ofTechnology (United States)

Session Chairs: Seiji Samukawa, Tohoku
Univ. (Japan); Ying Zhang, Taiwan
Semiconductor Manufacturing Co. Ltd.
(Taiwan)

1:20 pm: Advances in directed self-assembly integrationand manufacturability at 300mm (Invited Paper), Benjamen
M. Rathsack, Mark H. Somervell, Tokyo Electron America, Inc.
(United States); Makato  Muramatsu, Keiji  Tanouchi, Takahiro  
Kitano, Tokyo Electron Kyushu Ltd. (Japan); Eiichi  Nishimura,Tokyo Electron Miyagi Ltd. (Japan); Koichi  Yatsuda, Seiji
Nagahara, Hiroyuki Iwaki, Keiji  Akai, Mariko  Ozawa, Ainhoa
Romo-Negreira, Shigeru Tahara, Tokyo Electron Ltd. (Japan);
Kathleen Nafus, Tokyo Electron America, Inc. (Japan). [8682-19]
1:50 pm: Chemical epitaxy of strongly segregating block
copolymers with top-coats for assembling perpendicularly
oriented lamella with sub-10nm dimensions, Hiroshi Yoshida,
Hitachi, Ltd. (Japan); Jeong In Lee, Univ. of Wisconsin-Madison(United States); Hyo Seon Suh, Univ. of Chicago (United States);
Yoshihito Ishida, Lei Wan, Abelardo R. Hernandez, Univ. of
Wisconsin-Madison (United States); Kouhei Aida, YasuhikoTada, Hitachi, Ltd. (Japan); Juan J. de Pablo, Paul F. Nealey,
Univ. of Chicago (United States) . . . . . . . . . . . . . . . . . . [8680-13]
2:10 pm: New materials in DSA processing with reduced lineedge roughness, Rahul Sharma, Jessica P. Evans, The Dow
Chemical Co. (United States); Shih-Wei Chang, Dow Electronic
Materials (United States); John W. Kramer, Phillip D. Hustad,Valeriy V. Ginzburg, Jeffrey D. Weinhold, Daniel J. Murray, The
Dow Chemical Co. (United States); Peter Trefonas III, Dow
Electronic Materials (United States). . . . . . . . . . . . . . . . [8680-14]
2:30 pm: Progress in directed self-assembly hole shrink
applications, Todd R. Younkin, Intel Corp. (Belgium); Roel
Gronheid, Paulina Rincon Delgadillo, Boon Teik Chan, IMEC
(Belgium); Ainhoa Romo-Negreira, Tokyo Electron Europe
Ltd. (Netherlands); Kathleen Nafus, Mark H. Somervell, Tokyo
Electron America, Inc. (United States). . . . . . . . . . . . . . [8682-20]

1:40 pm: Robust SMO methodology for exposure
tool and mask variations in high-volume
production, Takaki Hashimoto, Yasunobu Kai,
Kazuyuki Masukawa, Shigeki Nojima, Toshiya
Kotani, Toshiba Corp. (Japan). . . . . . . . . . .  [8683-8]
2:00 pm: Imaging application tools for extremelylow-k1 ArF immersion lithography, Shinichi Mori,
Tomoharu Fujiwara, Hajime Aoyama, Junji Ikeda,
Taro Ogata, Ryota Matsui, Hisashi Nishinaga,
Shintaro Kudo, Tomoyuki Matsuyama, Nikon Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-9]
2:20 pm: Study of recent CFD-based scheme foranalyzing 3D mask effects, Masanori Takahashi,
Katsuyoshi Kodera, Masaya Motokubota, Toshiba
Corp. (Japan); Yuichi Kawabata, Toshiba Information
Systems (Japan) Corp. (Japan); Shimon Maeda,
Shigeki Nojima, Satoshi Tanaka, Shoji Mimotogi,
Toshiba Corp. (Japan). . . . . . . . . . . . . . . .  [8683-10]
2:40 pm: The effect of mask and sourcecomplexity on source-mask optimization, SeungHune Yang, Seong-Woon Choi, Jungdal Choi, HoKyu Kang, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . .  [8683-11]

1:30 pm: Properties of RLSATM microwave
surface wave plasma and its applications tofinFET fabrication (Invited Paper), Lee Chen, Tokyo
Electron America, Inc. (United States). . . . [8685-15]
2:00 pm: Challenging of 2xnm node MRAM
MTJ patterning technology (Invited Paper), Ken
Tokashiki, JongChul Park, HyungJoon Kwon,
Sangmin Lee, GwangHyun Baek, Jaehun Seo,
SangSup Jeong, SAMSUNG Electronics Co., Ltd.
(Korea, Republic of). . . . . . . . . . . . . . . . . .  [8685-16]
2:30 pm: Characterization of silicon etching in
synchronized pulsed plasma, Maxime Darnon,
Moritz Haass, Gilles Cunge, Olivier P. Joubert, LTM
CNRS (France); Samer Banna, Applied Materials,
Inc. (United States) . . . . . . . . . . . . . . . . . .  [8685-17]
2:50 pm: Analysis of cut-mask overlay in selfaligned multiple patterning and a misalignment
correction technique based on dry etching, Yijian
Chen, Peking Univ. Shenzhen Graduate School(China). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-18]
Coffee Break. . . . . . . . . . . . Tue 3:10 pm to 3:40 pm

3:00 pm: Illumination pupilgram control using
intelligent illuminator, Noriyuki Hirayanagi, Yasushi
Mizuno, Masakazu Mori, Naonori Kita, Ryota Matsui,
Tomoyuki Matsuyama, Nikon Corp. (Japan).[8683-12]
Coffee Break. . . . . . . . . . . . Tue 3:20 pm to 3:50 pm

2:50 pm: Materials and processes enabling block
copolymers for lithographic applications, Guanyang Lin,Yi Cao, Hengpeng Wu, Jian Yin, SungEun Hong, Margareta
Paunescu, Jane Wan, Orest Polishchuk, AZ Electronic Materials
USA Corp. (United States); Ankit Vora, Melia Tjio, Anindarupa
Chunder, Joy Y. Cheng, Daniel P. Sanders, IBM Almaden
Research Ctr. (United States). . . . . . . . . . . . . . . . . . . . . [8680-15]
Coffee Break. . . . . . . . . . . . . . . . . . . . . Tue 3:10 pm to 3:40 pm+1 360 676 3290

· help@spie.org·#SPIELitho29

Tuesday 26 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 6
Room: Conv. Ctr. 210 B
Tue 3:50 pm to 5:30 pm

Session 5
Room: Conv. Ctr. Hall 3
Tue 3:30 pm to 5:00 pm

Optics and Metrology

E-Beam Direct-Write for HighVolume Manufacturing I

Session Chairs: Katsuhiko Murakami, Nikon
Corp. (Japan); Michael Goldstein, SEMATECHNorth (United States)
3:50 pm: EUVL resist-based aberration metrology,
Germain L. Fenger, Bruce W. Smith, Rochester
Institute of Technology (United States); Sudharshanan
Raghunathan, Lei Sun, Thomas I. Wallow, Deniz Civay,
GLOBALFOUNDRIES Inc. (United States); Kenneth
A. Goldberg, Iacopo Mochic, Lawrence Berkeley
National Lab. (United States); Obert R. Wood II,
GLOBALFOUNDRIES Inc. (United States). . .  [8679-24]
4:10 pm: In situ optical testing of exposure tools
via localized wavefront curvature sensing, Ryan
H. Miyakawa, Christopher N. Anderson, Patrick P.
Naulleau, Lawrence Berkeley National Lab. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-25]
4:30 pm: Alignment performance of fiducial markon EUV blanks, Hamamoto Kazuhiro, Tsutomu Shoki,
Takahiro Onoue, Toshihiko Orihara, Osamu Maruyama,
Junichi Horikawa, HOYA Corp. (Japan). . . . .  [8679-26]
4:50 pm: Three-dimensional nanoscale defectinspection of photomasks using the TSOM method,
Ravikiran Attota, Haesung Park, National Instituteof Standards and Technology (United States); Lisa
Bendall, Brigham Young Univ. (United States).[8679-27]
5:10 pm: Application of phase shift focus monitor
in EUVL process control, Lei Sun, Sudharshanan
Raghunathan, GLOBALFOUNDRIES Inc. (UnitedStates); Vibhu Jindal, SEMATECH North (UnitedStates); Eric M. Gullikson, Lawrence Berkeley
National Lab. (United States); Pawitter J. Mangat,
GLOBALFOUNDRIES Inc. (United States); Iacopo
Mochi, Kenneth A. Goldberg, Lawrence Berkeley
National Lab. (United States); Oleg Kritsun,
Thomas I. Wallow, Deniz Civay, Obert R. Wood II,
GLOBALFOUNDRIES Inc. (United States). . .  [8679-28]

Session Chairs: Cynthia Hanson, Space andNaval Warfare Systems Ctr. Pacific (UnitedStates); Marco Wieland, MAPPER Lithography(Netherlands)
3:30 pm: Reflective electron-beam lithography:lithography results using CMOS controlled
digital pattern generator chip, Thomas Gubiotti,
Regina Freed, Jeff F. Sun, Francoise Kidwingira,Jason Yang, Chris F. Bevis, Allen Carroll, Alan D.
Brodie, William M. Tong, KLA-Tencor Corp. (UnitedStates); Shy-Jay Lin, Wen-Chuan Wang, Taiwan
Semiconductor Manufacturing Co. Ltd.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-16]
4:00 pm: Development of maskless electronbeam lithography using nc-Si electron-emitter
array, Akira Kojima, Hideyuki Ohyi, Crestec Corp.
(Japan); Naokatsu Ikegami, Nobuyoshi Koshida,
Tokyo Univ. of Agriculture and Technology (Japan);
Takashi Yoshida, Masayoshi Esashi, Tohoku Univ.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-17]
4:20 pm: Matching of beams on the MAPPER
MATRIX tool: a simulation study, Jérôme
Belledent, CEA-LETI (France); Mari Berglund,
MAPPER Lithography (Netherlands); Sebastien
Berard-Bergery, Laurent Pain, CEA-LETI(France). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-18]
4:40 pm: 50 keV electron multibeam mask
writing with 0.1nm address grid, Christof
Klein, Hans Loeschner, Elmar Platzgummer, IMS
Nanofabrication AG (Austria). . . . . . . . . . .  [8680-19]

Room: Conv. Ctr. Hall 3
5:00 pm to 7:00 pm
Panel Discussion on Challenges
for Directed Self-Assembly
Session Chairs: William M. Tong, KLA-Tencor
Corp. (United States); Joy Y. Cheng, IBM
Almaden Research Ctr. (United States)
Moderators: Joy Y. Cheng, IBM Almaden
Research Ctr. and William M. Tong,
KLA-Tencor Corp.  
Directed self-assembly (DSA), which combines
lithography-defined pre-patterns with selfassembled phase-separated polymers, has
become a promising path to continue the scalingof semiconductor devices. As a materials-based
resolution enhancement technique, DSA has
been demonstrated to augment the patterning
capability of 193i, EUV and E-beam lithography,
and has begun to transition from research labs
to development lines in past two years.  While
there have been important advances on thematerials and process fronts, to enable DSA as a
resolution enhancement technology, more efforts
are required in areas such as DSA-aware designand low defectivity. The characteristic length andnature of phase-separated polymers impose DSAspecific design restrictions and design-related
defectivities. The integration of compact DSA
model into design and computational lithography
may facilitate the co-optimization of design,materials, and processes. On the defectivity front,
more experimental data on inspection, metrology
and unit process monitoring are needed to identify
the defect sources and intrinsic DSA defects.
Please join experts in design, DFM, metrology,
and other critical areas in DSA to discuss these
critical challenges for DSA.

Room: Conv. Ctr. Hall 3
7:30 pm to 9:00 pm

Room: Conv. Ctr. Hall 3
7:30 pm to 9:00 pm
Joint Panel Discussion
Joint Panel with conferences 8679, 8680,
8682, 8683, 8684

30

Joint Panel Discussion
Joint Panel with conferences 8679, 8680,
8682, 8683, 8684

SPIE Advanced Lithography 2013·www.spie.org/al

Session 7
Room: Conv. Ctr. 230 B
Tue 3:40 pm to 5:40 pm
Scatterometry
Session Chairs: Richard M. Silver, National
Institute of Standards and Technology (UnitedStates); Alok Vaid, GLOBALFOUNDRIES Inc.
(United States)
3:40 pm: Inter-comparison between optical andx-ray scatterometry measurements of FinFET
structures, Paul Lemaillet, Thomas A. Germer, R.
Joseph Kline, Daniel F. Sunday, Chengqing Wang,
Wen-li Wu, National Institute of Standards andTechnology (United States). . . . . . . . . . . .  [8681-25]
4:00 pm: 28nm FDSOI metal gate profile
optimization, CD, and undercut monitoring using
scatterometry measurement, Bertrand LeGratiet,
Régis Bouyssou, Pascal Gouraud, STMicroelectronics(France); Latifa Desvoivres, CEA-LETI (France);
Benjamin Dumont, STMicroelectronics (France);
Guillaume Briend, IBM Corp. (France). . . . . .  [8681-26]
4:20 pm: Evaluating scatterometry 3D
capabilities for EUV, Jie Li, Nanometrics Inc.
(United States); Oleg Kritsun, GLOBALFOUNDRIES
Inc. (United States); Prasad Dasari, Nanometrics
Inc. (United States); Catherine R. Volkman,
GLOBALFOUNDRIES Inc. (United States); Jiangtao
Hu, Nanometrics Inc. (United States) . . . .  [8681-27]
4:40 pm: Scatterometry evaluation of focus
dose effects of EUVL structures, Prasad Dasari,
Nanometrics Inc. (United States); Oleg Kritsun,
GLOBALFOUNDRIES Inc. (United States); Jie Li,
Nanometrics Inc. (United States); Catherine R.
Volkman, GLOBALFOUNDRIES Inc. (United States);
Jiangtao Hu, Zhuan Liu, Nanometrics Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-28]
5:00 pm: Direct-scatterometry-enabled opticalproximity-correction-model calibration, Chih-Yu
Chen, Yu-Tian Shen, Kuen-Yu Tsai, Jia-Han Li,
National Taiwan Univ. (Taiwan); Jason J. Shieh, Alek
C. Chen, ASML Taiwan Ltd. (Taiwan) . . . . [8681-115]
5:20 pm: Enhancing scatterometry CD signal-tonoise ratio for 1x logic and memory challenges,
Derrick Shaughnessy, Shankar Krishnan, KLA-Tencor
Corp. (United States); Lanhua Wei, KLA-Tencor
California (United States); Andrei V. Shchegrov, KLATencor Corp. (United States)  . . . . . . . . . . . [8681-122]

Tuesday 26 February

Conference 8682

Conference 8683

Conference 8684

Conference 8685

Advances in Resist Materials
and Processing Technology
XXX

Optical Microlithography
XXVI

Design for
Manufacturability through
Design-Process
Integration VII

Advanced Etch
Technology for
Nanopatterning II

Session 7
Room: Marriott San Jose Ballroom Salon III
Tue 3:40 pm to 5:40 pm

Session 4
Room: Conv. Ctr. 210 C
Tue 3:50 pm to 5:30 pm

Negative Tone Patterning

RET

Session Chairs: Plamen Tzviatkov, FUJIFILM Electronic
Materials U.S.A., Inc. (United States); Douglas Guerrero,
Brewer Science, Inc. (United States)

Session Chairs: Carlos Fonseca, Tokyo Electron
America, Inc. (United States); Sachiko Kobayashi,
Toshiba Materials Co., Ltd. (Japan)

3:40 pm: Process development of the EUVL negative-tone
imaging at EIDEC, Toshiya Takahashi, Ryuji Onishi, Toshiro Itani,
EUVL Infrastructure Development Ctr., Inc. (Japan) . . . . .  [8682-21]
4:00 pm: Sub-20nm lithography negative-tone chemicallyamplified resists using cross-linker additives, Prashant K.
Kulshreshtha, Lawrence Berkeley National Lab. (United States); Ken
Maruyama, JSR Micro, Inc. (United States); Sara Kiani, Lawrence
Berkeley National Lab. (United States); James M. Blackwell, Intel
Corp. (United States); Paul D. Ashby, Deidre L. Olynick, Lawrence
Berkeley National Lab. (United States). . . . . . . . . . . . . . . .  [8682-22]
4:20 pm: Investigation of trench and contact hole shrink
mechanism in the negative-tone develop process, Sohan
S. Mehta, Craig D. Higgins, Shyam Pal, Huipeng Koh, Lokesh
Subramany, Salman Iqbal, Bumhwan Jeon, Pedro Morrison, Christos
Karanikas, Yayi Wei, GLOBALFOUNDRIES Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-23]
4:40 pm: Negative-tone imaging (NTI) with KrF exposure at the
20nm node: extension of 248nm IIP lithography to under 20nm
logic device, Tae-Hwan Oh, Tae-Sun Kim, Yura Kim, Jahee Kim,
Sujeong Heo, Bumjoon Youn, Jaekyung Seo, Kwang-sun Yoon,
Byoung Il Choi, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-24]
5:00 pm: EUV lithography performance of negative-tonechemically amplified fullerene resist, Alex P. Robinson, Andreas
Frommhold, The Univ. of Birmingham (United Kingdom); Alexandra L.
McClelland, Irresistible Materials (United Kingdom); Dong Xu Yang,
The Univ. of Birmingham (United Kingdom); Xiang Xue, Nano-C, Inc.
(United States); Richard E. Palmer, The Univ. of Birmingham (United
Kingdom) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-25]
5:20 pm: Non-aqueous negative-tone development of inorganic
metal oxide nanoparticle photoresists for next-generation
lithography, Christine Y. Ouyang, Yeon Sook Chung, Markos
Trikeriotis, Marie E. Krysak, Emmanuel P. Giannelis, Christopher K.
Ober, Cornell Univ. (United States). . . . . . . . . . . . . . . . . . .  [8682-26]

3:50 pm: Inverse lithography technique (ILT) for advanced
CMOS nodes, Alexandre Villaret, STMicroelectronics(France); Alexander Tritchkov, Mentor Graphics Corp. (UnitedStates); Jorge Entradas, Mentor Graphics (Ireland) Ltd.
(France); Emek Yesilada, STMicroelectronics(France). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-14]

Room: Conv. Ctr. Hall 3
7:30 pm to 9:00 pm
Joint Panel Discussion
Joint Panel with conferences 8679, 8680,
8682, 8683, 8684

Emerging Patterning
Technology
Session Chairs: Charles N. Black,
Brookhaven National Lab. (UnitedStates); Ricardo Ruiz, HGST (UnitedStates)3:40 pm: Pattern transfer of directed
self-assembly patterns for CMOS device
applications (Invited Paper), Hsinyu Tsai,
Hiroyuki Miyazoe, Sebastian U. Engelmann,
Sarunya Bangsaruntip, Isaac Lauer, James
J. Bucchignano, David P. Klaus, Lynne M.
Gignac, Eric A. Joseph, IBM Thomas J.
Watson Research Ctr. (United States); Joy
Y. Cheng, Daniel P. Sanders, IBM Almaden
Research Ctr. (United States); Michael A.
Guillorn, IBM Thomas J Watson Research
Ctr (United States). . . . . . . . . . . . [8685-19]

4:10 pm: Mask compensation for process flare in 193nm
very low-K1 lithography, Jeonkyu Lee, Taehyeong Lee,
Chunsoo Kang, Jungchan Kim, Jaeseung Choi, Chan-Ha
Park, Hyun-Jo Yang, Dong Gyu Yim, SK Hynix, Inc. (Korea,
Republic of); Jung-Hoe Choi, Synopsys Korea Inc. (Korea,
Republic of); Irene Su, Synopsys Taiwan Ltd. (Taiwan); HuaSong, Synopsys, Inc. (United States); Mun-hoi Do, Synopsys
Korea Inc. (Korea, Republic of); Yongfa Fan, Anthony C.
Wang, Synopsys, Inc. (United States); Sung-Woo Lee,
Synopsys Korea Inc. (Korea, Republic of); Kevin Lucas,
Synopsys, Inc. (United States). . . . . . . . . . . . . . . .  [8683-15]

4:10 pm: Novel approaches on doublepatterning process toward sub-15nm(Invited Paper), Hidetami Yaegashi, Tokyo
Electron Ltd. (Japan); Kenichi Oyama,
Shohei Yamauchi, Arisa Hara, Sakurako
Natori, Masatoshi Yamato, Tokyo Electron
AT Ltd. (Japan) . . . . . . . . . . . . . . [8685-20]

4:30 pm: Pupil wavefront manipulation to compensate
for mask topography effects in optical nanolithography,
Monica Kempsell Sears, Bruce W. Smith, Rochester Instituteof Technology (United States) . . . . . . . . . . . . . . . .  [8683-16]
4:50 pm: Effective model-based SRAF placement for fullchip 2D layouts, Srividya Jayaram, Pat J. Lacour, Alexander
Tritchkov, Mentor Graphics Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-17]

4:40 pm: Generation and transfer oflarge-area lithographic patterns in the~10nm feature size regime (Invited Paper),Thomas R. Albrecht, Christian Bonhôte,
Yves-Andre Chapuis, Elizabeth A. Dobisz,
He H. Gao, Dan S. Kercher, Jeffrey Lille,
Kanaiyalal C. Patel, Ricardo Ruiz, Jovita
Tjahjadi, Lei Wan, Tsai-Wei Wu, HGST
(United States). . . . . . . . . . . . . . . [8685-21]

5:10 pm: Wafer topography modeling for ionic
implantation mask correction dedicated to 2xnm nodes
on FDSOI substrate, Jean-Christophe Michel, JeanChristophe Le Denmat, Elodie Sungauer, Frederic Robert,
Emek Yesilada, STMicroelectronics (France); Ana Maria
Armeanu, Jorge Entradas, Mentor Graphics (France); John
L. Sturtevant, Thuy Do, Yuri Granik, Mentor Graphics Corp.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-18]

Conference End.

Room: Conv. Ctr. Hall 3
7:30 pm to 9:00 pm

Room: Conv. Ctr. Hall 3
7:30 pm to 9:00 pm

Joint Panel Discussion

Joint Panel Discussion

Joint Panel with conferences 8679, 8680,
8682, 8683, 8684

Joint Panel with conferences
8679, 8680, 8682, 8683, 8684

+1 360 676 3290

· help@spie.org·

Session 6
Room: Conv. Ctr. 211 B
Tue 3:40 pm to 5:10 pm#SPIELitho

31

Tuesday 26 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The exhibition will be open during the Poster Session on Tuesday only. Be sure to visit the exhibit booths during this time for insight on what is new and coming soon.
The following posters will be on display after 10:00 am on Tuesday. The interactive poster session with authors in attendance will be Tuesday evening from 6:00 to 8:00 pm.
All symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will be available for discussion.
Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Tuesday Poster Reception Sponsor

Conf. 8681 Metrology,
Inspection, and Process
Control for Microlithography
XXVII
Session Chairs: John C. Robinson, KLATencor Corp. (United States); Matthew J.
Sendelbach, Nova Measuring Instruments Inc.
(United States)
Modeling ion-induced secondary electron
emission in scanning ion microscopes, Kaoru
Ohya, Takuya Yamanaka, Univ. of Tokushima(Japan); Jun Kawata, Kagawa National College ofTechnology (Japan). . . . . . . . . . . . . . . . . .  [8681-58]
The correlation between ArF resist dispense
volume and surface tension, Tung-Chang Kuo,
United Microelectronics Corp. (Taiwan) . .  [8681-59]
Enhanced photomask quality control by 2D
structures monitoring using auto image-tolayout method on advanced 28nm technology
node or beyond, Chingyun Hsiang, Anchor
Semiconductor, Inc. (United States); Eric G.
Guo, Irene Shi, Eric M. Tian, Semiconductor
Manufacturing International Corp. (China); Guojie
Cheng, Li Ling, Ke Zhou, Anchor Semiconductor,
Inc. (China); Ye Chen, Joanne Wu, Ke-Chih Wu,
Anchor Semiconductor, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-60]
Signal characteristics of high-aspect ratio
contact hole analyzed by simulator CHARMs,
Toshiyuki Yokosuka, Chahn Lee, Hitachi,Ltd. (Japan); Hideyuki Kazumi, Hitachi HighTechnologies Corp. (Japan) . . . . . . . . . . .  [8681-61]
Process window OPC verification with 3D resist
profile calibration, Shao Wen Gao, Young Ki Kim,
GLOBALFOUNDRIES Inc. (United States). [8681-62]
High-order wafer alignment for 20nm node,
Bumhwan Jeon, GLOBALFOUNDRIES Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-63]32

In-chip overlay metrology method using reviewSEM images, Jaehyoung Oh, Gwangmin Kwon,
Daiyoung Mun, Hyungwon Yoo, Sungsu Kim,
Taehui Kim, SK Hynix, Inc. (Korea, Republic of);
Minoru Harada, Yohei Minekawa, Hitachi, Ltd.
(Japan); Fumihiko Fukunaga, Mari Nozoe, Hitachi
High-Technologies Corp. (Japan). . . . . . .  [8681-64]
Control of inspection for EUV substrates andmask blanks, Milton C. Godwin, Ranganath Teki,
Andy Ma, SEMATECH North (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-65]
Joint calibration with CDSEM and 3D resist
image, Chih-Shiang Chou, Yan-Ying He, YaTing Chang, Yu-Po Tang, Wen-Chun Huang,
Ru-Gun Liu, Tsai-Sheng Gau, Burn J. Lin, Taiwan
Semiconductor Manufacturing Co., Ltd.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-66]
Line-edge roughness measurement of finger
print BCP, Miki Isawa, Kei Sakai, Hitachi HighTechnologies Corp. (Japan); Roel Gronheid, IMEC
(Belgium); Hiroshi Yoshida, Hitachi Ltd.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-67]
Nanoscale pitch standards sample fabricatedusing atom lithography, Yan Ma, Sheng Wei Xiao,
Tongbao Li, Tongji Univ. (China). . . . . . . .  [8681-71]
Increased particle inspection sensitivity by
reduction of background scatter variance, Petervan der Walle, Pragati Kumar, Dmitry Ityaksov,
Richard Versluis, Diederik J. Maas, Olaf Kievit,
Jochem Janssen, Jacques C. J. van der Donck,
TNO (Netherlands). . . . . . . . . . . . . . . . . . .  [8681-72]
Overlay improvement through lot-based
feed-forward: applications to various 28nm
node lithography operations, Bastien Orlando,
Maxime Gatefait, Pierre-Jerome Goirand,
STMicroelectronics (France). . . . . . . . . . .  [8681-73]
Scatterometry-based dose and focus
decorrelation: applications to 28nm contact holepatterning intrafield focus investigations, Bastien
Orlando, Nicolas Spaziani, Nelly Socquet, Maxime
Gatefait, Régis Bouyssous, Pierre-Jerome Goirand,
STMicroelectronics (France). . . . . . . . . . .  [8681-74]
Fast simulation method for parameterreconstruction in optical metrology, Sven Burger,
JCMwave GmbH (Germany) and Zuse Institute
Berlin (Germany); Jan Pomplun, Lin Zschiedrich,
JCMwave GmbH (Germany); Frank Schmidt,
JCMwave GmbH (Germany) and Zuse Institute
Berlin (Germany); Bernd Bodermann, PhysikalischTechnische Bundesanstalt (Germany). . . .  [8681-75]

DSA hole defectivity analysis using advanced
optical inspection tool, Ryota Harukawa, KLATencor Japan (Japan); Masami Aoki, KLA-Tencor
Corp. (United States); Andrew J. Cross, KLA-Tencor
UK (United Kingdom); Venkat R. Nagaswami,
KLA-Tencor Corp. (United States); Tadayuki
Tomita, Tokyo Electron Kyushu Ltd.  (Japan); Seiji
Nagahara, Tokyo Electron Ltd. (Japan); Makoto
Muramatsu, Shinichiro Kawakami, Hitoshi Kosugi,
Tokyo Electron Kyushu Ltd. (Japan); Benjamen
Rathsack, Tokyo Electron America, Inc. (UnitedStates); Takahiro Kitano, Tokyo Electron Kyushu
Ltd. (Japan); Jason Sweis, Ali Mokhberi, Cadence
Design Systems, Inc. (United States) . . . .  [8681-76]

Overlay accuracy calibration, Eran Amit, Dana
Klein, Guy Cohen, Nuriel Amir, KLA-Tencor Israel(Israel) . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-84]
A novel focus-dose monitoring technique using
iso-dense overlay mark, Shuxin Li, Jianrui Cheng,
Anatoly Y. Bourov, Gang Sun, Shanghai Micro
Electronics Equipment Co., Ltd. (China). .  [8681-85]
Manufacturing and advanced characterization of
sub-25nm diameter CD-AFM probes with sub10nm tip edges radius, Johann Foucher, CEA-LETI(France); Pavel Filippov, Christian Penzkofer, Bernd
Irmer, Sebastian W. Schmidt, nanotools GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-86]

Quantitative CDSEM resist line CD shrinkage
study and its application to accure CDSEM
tools matching, Wenhu Li, Y. Shin, A. Lin, Siyuan
F. Yana, Boxiu S. Cai, Yi Huang, Semiconductor
Manufacturing International Corp. (China). [8681-77]

Quality metric for accurate overlay control in<20nm nodes, Dana Klein, Eran Amit, Guy Cohen,
Nuriel Amir, KLA-Tencor Israel (Israel); Chin-Chou K.
Huang, Ramkumar  Karur-Shanmugam, Bill Pierson,
KLA-Tencor USA (United States) . . . . . . .  [8681-87]

Scatterometry simulator development using
parallel RCWA/optimization on GPU, Hirokimi
Shirasaki, Tamagawa Univ. (Japan) . . . . .  [8681-78]

SEM-contour shape analysis method foradvanced semiconductor devices, Yasutaka
Toyoda, Hitachi, Ltd. (Japan); Hiroyuki Shindo,
Yoshihiro Ota, Ryoichi Matsuoka, Yutaka Hojo,
Hideo Sakai, Hitachi High-Technologies Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-88]

Inline high-k/metal gate monitoring using
picosecond ultrasonics, Chun-Wei Hsu, United
Microelectronics Corp. (Taiwan); Jay Chen, RudolphTechnologies Taiwan (Taiwan); Ren Peng Huang,
United Microelectronics Corp. (Taiwan); Welch  
Lin, United Microelectronics Corp. (Taiwan) and
Rudolph Technologies (United States); Y. Lawrence
Hsieh, Wei Che Tsao, Anchor C. H. Chen, Yu Min
Lin, Chih Hsun Lin, H. K. S. Hsu, Kent Liu, Climbing
Huang, J. Y.  Wu, United Microelectronics Corp.
(Taiwan); John Tan, Rudolph Technologies Taiwan(Taiwan); Johnny Dai, Priya Mukundhan, RudolphTechnologies, Inc. (United States). . . . . . . [8681-79]
Advanced overlay stability control withcorrection per exposure on immersion scanners,
Jinkyu Han, Jin-Seok Heo, Chan Hwang, Jeongho
Yeo, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . .  [8681-80]
Optical analysis on the wafer defect inspection
for yield enhancement, Yonghee Park, Mirero Inc.
(Korea, Republic of). . . . . . . . . . . . . . . . . .  [8681-81]
Exploration of the DBO/uDBO marks
performance for advanced lithographynode C020nm and C028 overlay processcontrol, Jerome Depre, ASML Netherlands B.V.
(Netherlands); Yoann Blancquaert, CEA-LETI(France). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-83]

SPIE Advanced Lithography 2013·www.spie.org/al

In-die mask registration measurement on 28nm
node and beyond, Hsien-Hung Chen, Yung-Feng
Cheng, Ming-Jui Chen, United Microelectronics
Corp. (Taiwan). . . . . . . . . . . . . . . . . . . . . .  [8681-89]
Sensitivity improvement of angle-resolved
scatterometer by illumination optimization,
Hailiang Lu, Fan Wang, Lifeng Duan, Yonghui Chen,
Shanghai Micro Electronics Equipment Co., Ltd.
(China). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-90]
Integrated focus and overlay monitoring andcontrol solution for ASML scanner NXT:1950i
system, Shawn H. Lee, ASML Netherlands B.V.
(Netherlands); Jin-Seok Heo, Jinkyu Han, Chan
Hwang, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of); Tjitte Nooitgedagt, Marc Kea, Hannah
Wei, Emil P. Schmitt-Weaver, Wolfgang Henke,
Hans Kattouw, Paul Luehrmann, ASML Netherlands
B.V. (Netherlands). . . . . . . . . . . . . . . . . . .  [8681-91]

Tuesday 26 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The exhibition will be open during the Poster Session on Tuesday only. Be sure to visit the exhibit booths during this time for insight on what is new and coming soon.
The following posters will be on display after 10:00 am on Tuesday. The interactive poster session with authors in attendance will be Tuesday evening from 6:00 to 8:00 pm.
All symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will be available for discussion.
Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Study of overlay in EUV/ArF mix and match
lithography, Chin-Chou K. Huang, Gino Marcuccilli,
Kyungbae Hwang, Antonio Mani, KLA-Tencor Corp.
(United States); Chua Lin, KLA-Tencor Singapore(Singapore); Dongsub Choi, David C. Tien, KLATencor Corp. (United States); Bill Pierson, KLATencor Texas (United States); Ramkumar KarurShanmugam, John C. Robinson, KLA-Tencor Corp.
(United States); Byoung-Hoon Lee, Inhwan Lee,
Hynix Semiconductor Inc. (Korea, Republicof) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-92]
Lithography focus/exposure control andcorrections to improve CDU, Young Ki Kim,
GLOBALFOUNDRIES Inc. (United States). [8681-93]
Inspection of high-aspect ratio layers at
sub-20nm node, Kuan Lin, Abhishek Vikram,
GLOBALFOUNDRIES Inc. (United States); Janay
Camp, Sumanth Kini, KLA-Tencor New York (UnitedStates); Frank Jin, KLA-Tencor Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-94]
Characterization of photochemical filtration
membranes in organic solvents by using sub10nm fluorescent Cd-based QDs, Suwen Liu,
Haizheng Zhang, Entegris, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-95]
Scatterometry accuracy improvement using 3D
shapes, Shahin Zangooie, Satya Myneni, Peter
J. Wilkens, HGST (United States); Nick Keller, T.
P. Sarathy, Milad Tabet, Nanometrics Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-96]
Advanced gate CDU control in sub-28nm
node using poly slot process by scatterometry
metrology, Lanny Mihardja, KLA-Tencor Corp.
(United States); Wei-Jhe Tzai, Howard Chen,
Jun-Jin Lin, Yu-Hao Huang, Chun Chi Yu, United
Microelectronics Corp. (Taiwan); Ching-Hung Bert
Lin, Sungchul Yoo, Chien-Jen E. Huang, KLATencor Corp. (United States). . . . . . . . . . .  [8681-97]
Discrimination of concave defects (pits) on
Electrofill® copper wafers using dark fieldsurface scanning inspection systems, NatalieTran, Bjorn Skyberg, Donald Schlosser, Lam
Research Corp. (United States); Steve A. McGarvey,
Hitachi High Technologies America, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-98]

Inter-tool data feed-forward for improved
optical CD and film metrology in a fab-wide
implementation, Lanny Mihardja, Ming Di, Qiang
Zhao, Zhengquan Tan, KLA-Tencor Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-101]
Accurate real-time optical modeling of 3D masks
and nanostructures, Jan Pomplun, Sven Burger,
Lin Zschiedrich, Frank Schmidt, JCMwave GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . .  [8681-102]
Micro-bubble removal method for water-basedmaterials, Tomohide Katayama, AZ Electronic
Materials (Japan) K.K. (Japan). . . . . . . . .  [8681-103]
Sub-40nm high-volume manufacturing overlay
non-correctable error characterization, Pary
Baluswamy, Bryan J. Orf, Ranjan Khurana,
Wolfgang Keller, Soujanya Vuppala, Micron
Technology, Inc. (United States). . . . . . .  [8681-106]
Key points to measure LER accurately by CDSEM using ultra-low LER line feature, Hiroki
Kawada, Toru Ikegami, Norio Hasegawa, Hitachi
High-Technologies Corp. (Japan); Kenichi Oyama,
Tokyo Electron AT Ltd. (Japan); Hidetami Yaegashi,Tokyo Electron Ltd. (Japan) . . . . . . . . . .  [8681-108]
Computational defect review for actinic mask
inspections, Paul Morgan, MP Mask Technology
Ctr., LLC (United States); Noel Corcoran,
Luminescent Technologies (United States); Daniel
L. Rost, MP Mask Technology Ctr., LLC (UnitedStates); Masaki Satake, Peter Hu, Jing Zheng,
Dean Yonenaga, Vikram L. Tolani, LuminescentTechnologies (United States) . . . . . . . . .  [8681-109]
Design-based metrology for development andmanufacturing applications, Peter D. Brooker,
Synopsys, Inc. (United States); Shimon Levi,
Applied Materials (Israel); Sylvain Berthiaume,
Synopsys, Inc. (Canada); William A. Stanton, Travis
Brist, Synopsys, Inc. (United States). . . .  [8681-110]
Design, characterization, and printability analysis
of a new 28nm reticle haze test mask, Anthony D.
Vacca, Luminescent Technologies (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-111]

Performance evaluation of reticle inspection
equipment for high-volume manufacturingfabs, Yu Yu Chen, Todd Shih, Vic Yin, Taiwan
Semiconductor Manufacturing Co. Ltd. (Taiwan);
Anna V. Tchikoulaeva, Lasertec U.S.A., Inc.
Zweigniederlassung Deutschland (Germany); Koichi
Moriizumi, Kazuhito Yamamoto, Lasertec Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-112]
Productivity improvement through automatedoperation of reticle defect inspection tools
in a wafer fab environment, Christian Holfeld,
GLOBALFOUNDRIES Dresden Module Two,GmbH & Co. KG (Germany); Heiko Wagner,
GLOBALFOUNDRIES Dresden Module One LLC &Co. KG (Germany); Anna V. Tchikoulaeva, Lasertec
U.S.A., Inc. Zweigniederlassung Deutschland(Germany); Steffen Loebeth, Stephan Melzig,
GLOBALFOUNDRIES Dresden Module Two, GmbH& Co. KG (Germany); Yulin Zhang, Lasertec U.S.A.,
Inc. Zweigniederlassung Deutschland (Germany);
Shinichi Tanabe, Takenori Katoh, Koichi Moriizumi,
Lasertec Corp. (Japan) . . . . . . . . . . . . . .  [8681-113]
Introduction of a high-throughput SPM fordefect inspection and process control, Hamed
Sadeghian, Norbert B. Koster, Teun C. van den
Dool, TNO (Netherlands). . . . . . . . . . . . .  [8681-121]

Poster Session: Student Posters
Phase extraction from random phase-shiftedshadow moiré fringe patterns using stereovision
technique, Feifei Gu, Du Hubing, Hong Zhao, Bing
Li, Xi’an Jiaotong Univ. (China). . . . . . . .  [8681-114]
Fast phase-shifting shadow moiré by utilizing
multiple light sources, Du Hubing, Hong Zhao,
Bing Li, Xi’an Jiaotong Univ. (China). . . .  [8681-117]
Measurement configuration optimization
for grating reconstruction by Mueller matrix
polarimetry, Xiuguo Chen, Shiyuan Liu, Chuanwei
Zhang, Huazhong Univ. of Science and Technology(China); Hao Jiang, The Univ. of Texas at Arlington(United States). . . . . . . . . . . . . . . . . . . . .  [8681-119]

Conf. 8682 Advancesin Resist Materials andProcessing Technology XXXSpacer Development
Pattern wiggling investigation of self-aligned
double-patterning for 2x-nm node NAND Flashand beyond, You Yu Lin, Powerchip Technology
Corp. (Taiwan). . . . . . . . . . . . . . . . . . . . . .  [8682-48]
Extendibility of self-aligned type multiple
patterning for further scaling, Shohei Yamauchi,
Arisa Hara, Masatoshi Yamato, Kenichi Oyama,
Sakurako Natori, Tokyo Electron AT Ltd. (Japan);
Hidetami Yaegashi, Tokyo Electron Ltd.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-49]
Resist slimming process for advanced
multipatterning, Yuhei Kuwahara, Satoru Shimura,
Kousuke Yoshihara, Tokyo Electron Kyushu Ltd.
(Japan); Takashi Saito, David R. Hetzer, TEL
Technology Ctr., America, LLC (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-50]
Process requirements of self-aligned multiple
patterning, Sakurako Natori, Arisa Hara, Shohei
Yamauchi, Masatoshi Yamato, Kenichi Oyama,
Tokyo Electron AT Ltd. (Japan); Hidetami Yaegashi,Tokyo Electron Ltd. (Japan) . . . . . . . . . . .  [8682-51]

Fundamentals
Capability study and challenges to sub-2xnm
node contact hole patterning, Wan-Lin Kuo,
Powerchip Technology Corp. (Taiwan); Ya-Ting
Chan, Powerchip Semiconductor Corp. (Taiwan);
Meng-Feng Tsai, Yi-Shiang Chang, Chia-Chi Lin,
Ming-Chien Chiu, Chun-Hsun Chen, Hung-Ming
Wu, Mao-Hsing Chiu, Powerchip Technology Corp.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-12]
Photoresist film analysis to investigate LWR
generation mechanism, Shinichi Nakamura, Tooru
Kimura, Kenji Mochida, JSR Corp. (Japan); Kana
Nakanishi, Naohiko Kawasaki, Naoki Man, Toray
Research Ctr., Inc. (Japan). . . . . . . . . . . .  [8682-52]
Theoretical study of deprotonation of polymer
radical cation for EUV Resist, Masayuki Endo,
Seiichi Tagawa, Osaka Univ. (Japan) and JSTCREST (Japan) . . . . . . . . . . . . . . . . . . . . .  [8682-53]

The challenges encountered in the integration ofan early test wafer surface scanning inspection
system into a 450mm manufacturing line, Steve
A. McGarvey, Hitachi High Technologies America,
Inc. (United States); Jeffrey Lee, Global 450
Consortium (G450C) (United States). . . . .  [8681-99]

Analysis of the generating action of the acidfrom PAG using acid sensitive dyes for EUV
resist, Atsushi Sekiguchi, Litho Tech Japan Co.,
Ltd. (Japan). . . . . . . . . . . . . . . . . . . . . . . .  [8682-54]+1 360 676 3290

· help@spie.org·#SPIELitho33

Tuesday 26 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The exhibition will be open during the Poster Session on Tuesday only. Be sure to visit the exhibit booths during this time for insight on what is new and coming soon.
The following posters will be on display after 10:00 am on Tuesday. The interactive poster session with authors in attendance will be Tuesday evening from 6:00 to 8:00 pm.
All symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will be available for discussion.
Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Calculating development parameters forchemically-amplified resists by the film-reducing
method, Atsushi Sekiguchi, Litho Tech Japan Co.,
Ltd. (Japan). . . . . . . . . . . . . . . . . . . . . . . .  [8682-55]
Study of swelling behavior in ArF resist during
development by the QCM method, III, Atsushi
Sekiguchi, Litho Tech Japan Co., Ltd.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-56]
Light scattering by organic crosslinking materialusing nanomorphology of polymer blends,
Satoshi Takei, Kazuki Maekawa, Takumi Ichikawa,Toyama Prefectural Univ. (Japan); Yoshiyuki
Yokoyama, Toyama Industrial Technology Ctr.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-57]
Activation energy studies of deprotection anddiffusion during millisecond post-exposure bake,
Jing Jiang, Byungki Jung, Michael O. Thompson,
Christopher K. Ober, Cornell Univ. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-58]
Use of high-speed separation for
multidimensional chromatographic
characterization of photoresist polymers, Michael
J. O’Leary, Waters Corp. (United States) .  [8682-59]
PEB to development delay influence on contact
patterning by negative-tone development
process, Chang Kai Chen, Chia Hua Lin, Chih-Hao
Huang, Elvis Yang, Ta-Hung Yang, Chang Kai Chen,
Chih-Yuan Lu, Macronix International Co., Ltd.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-60]
What exactly does ‘neutrality’ mean for directed
self-assembly neutral layers, Jeffrey T. Smith,Shahid Shaikh, Betty Tang, Applied Materials, Inc.
(United States). . . . . . . . . . . . . . . . . . . . . .  [8682-61]

Novel Materials
Novel ArF resist polymer to suppress theroughness formation in plasma etchingprocesses, Keisuke Kato, Atsushi Yasuda, Shinichi Maeda, Mitsubishi Rayon Co., Ltd. (Japan);Takuji Uesugi, Takeru Okada, Akira Wada, Seiji
Samukawa, Tohoku Univ. (Japan). . . . . . .  [8682-62]
Novel inorganic-organic hybrid polymer
resists with a positive-tone behavior, Daniela
Troetschel, Gerhard Domann, Fraunhofer-Institut für
Silicatforschung (Germany). . . . . . . . . . . .  [8682-63]

34

EUV lithography using water-developable resist
material derived from biomass, Satoshi Takei,
Toyama Prefectural Univ. (Japan); Akihiro Oshima,
Osaka Univ. (Japan); Takumi Ichikawa, Atsushi
Sekiguchi, Toyama Prefectural Univ. (Japan); Miki
Kashiwakura, Osaka Univ. (Japan); Tomoko G.
Oyama, Japan Atomic Energy Agency (Japan);
Takahiro Kozawa, Seiichi Tagawa, Osaka Univ.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-64]
Polarization selective photoresist based on liquid
crystals doped with a dichroic photoinitiator,
M. P. Van, Cees W. M. Bastiaansen, Dick J. Broer,
Technische Univ. Eindhoven (Netherlands).[8682-65]
Development of new xanthendiol derivatives
applied to the negative-tone molecular resistsfor EB/EUVL, Masatoshi Echigo, Masako
Yamakawa, Yumi Ochiai, Yu Okada, Takashi
Makinoshima, Masaaki Takasuka, Mitsubishi Gas
Chemical Co., Inc. (Japan) . . . . . . . . . . . .  [8682-66]
Preparation and properties of novel polymericsulfonium photoacid generator, Juan Liu, Liyuan
Wang, Beijing Normal Univ. (China) . . . . .  [8682-67]
High-scan speed EBL containing contact hole
resists with low defectivity, Deyan Wang, Dow
Electronic Materials (United States); Tsung-Ju Yeh,
Kai-Lin Chuang, Chia Min Chen, Lian Cong Liu, Chia
Hung Lin, Chun Chi Yu, United Microelectronics
Corp. (Taiwan); Mingqi Li, Chunfeng Guo, Rick
Hardy, Tom Estelle, Cheng-Bai Xu, George G.
Barclay, Peter Trefonas III, Kathleen M. O’Connell,
Dow Electronic Materials (United States).  [8682-68]
Electron dose reduction through improved
adhesion by cationic organic material with HSQ
resist on an InGaAs multilayer system on GaAs
substrate, Wilfried Erfurth, Max-Planck-Institut für
Mikrostrukturphysik (Germany); Andrew Thompson,
DisChem, Inc. (United States). . . . . . . . . . . [8682-77
New negative resist design with novel photobase
generator, Wen-Yun Wang, Taiwan Semiconductor
Manufacturing Co., LTD (Taiwan); Steven Wu, YiChen Su, Chen-Hao Wu, Ya-Hui Chang, Ching-Yu
Chang, Yao-Ching Ku, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan). . . . . . . .  [8682-78]

Directly-photodefinable guiding layers: an
update of simplified processes for lithographic
patterning using directed self-assembly, Jing
Cheng, Richard A. Lawson, Wei-Ming Yeh, Nathan
D. Jarnagin, Laren M. Tolbert, Clifford L. Henderson,
Georgia Institute of Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-81]
Postiive tone resists for sub-20nm patterning
based on network deploymerization, Ameneh
Cheshmehkani, Richard A. Lawson, Laren M.
Tolbert, Clifford L. Henderson, Georgia Institute ofTechnology (United States). . . . . . . . . . . .  [8682-82]
A universal scheme for direct thermal
nanoimprint lithography of oxides, Saman Safari
Dinachali, A*STAR Institute of Materials Researchand Engineering (Singapore) and National Univ. ofSingapore (Singapore); Mohammad S. M. Saifullah,
A*STAR Institute of Materials Research andEngineering (Singapore); Ramakrishnan Ganesan,
Birli Institute of Technology and Science, Pilani(India); Chaobin He, A*STAR Institute of Materials
Research and Engineering (Singapore) and National
Univ. of Singapore (Singapore). . . . . . . . .  [8682-83]

Novel Processing
Selective laser ablation in resists and block
copolymers for high-resolution lithographic
patterning, Deidre L. Olynick, Pradeep N. Perera,
Adam M. Schwartzberg, Stefano Cabrini, Lawrence
Berkeley National Lab. (United States); Nathan D.
Jarnagin, Clifford L. Henderson, Georgia Institute ofTechnology (United States). . . . . . . . . . . .  [8682-69]
Fabrication of optical film derived from biomass
using eco-friendly nanoimprint lithography,
Satoshi Takei, Toyama Prefectural Univ. (Japan);
Gaku Murakami, Richell Corp. (Japan); Atsushi
Sekiguchi, Toyama Prefectural Univ. (Japan);
Tsutomu Obata, Yoshiyuki Yokoyama, Wataru
Mizuno, Junji Sumioka, Toyama Industrial
Technology Ctr. (Japan); Yuji Horita, Richell Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-70]

SPIE Advanced Lithography 2013·www.spie.org/al

High chi polymer development for DSA
applications using RAFT technology, Michael
T. Sheehan, DuPont (United States); William B.
Farnham, DuPont Electronic Polymers (UnitedStates); Hoang V. Tran, Dupont CR&D (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-79]
Method of releasing silicon-based MEMS devices
with hard-baked polyimide sacrificial layer,
Javaneh Boroumand Azad, Imen Rezadad, Robert E.
Peale, Univ. of Central Florida (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-80]

Manufacturing Considerations
The effects of reduced resist consumption
process conditions on total raw defects,
line and space defects, and single-line open
defects at the 20nm node, Christos Karanikas,
GLOBALFOUNDRIES Inc. (United States); Jeong
Soo Kim, GLOBALFOUNDRIES Singapore (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-72]
Point-of-use filter membrane selection, start-up,
and conditioning for low-defect photolithography
coatings, Nick L. Brakensiek, Brewer Science, Inc.
(United States); Michael F. Cronin, Entegris, Inc.
(United States). . . . . . . . . . . . . . . . . . . . . .  [8682-73]
Strategy for yield improvement with sub-10nm
photochemical filtration, Jennifer Braggin, Entegris,Inc. (United States); Colin J. Brodsky, Michael
Linnane, Paul Klymko, IBM Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-74]
Effects of dispense equipment sequence onprocess start-up and defects, Nick L. Brakensiek,
Brewer Science, Inc. (United States); Brian W. Kidd,
Integrated Designs, L.P. (United States); Michael S.
Sevegney, Barry Gotlinsky, Pall Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-75]

available for discussion. Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Visit the onsite Bookstore
Conf. 8685 Advanced Etch
Technology for Nanopatterning II
Superselective silicon cryo-etching for nanoscalepattern transfer with block copolymer lithography,
Zuwei Liu, Lawrence Berkeley National Lab. (UnitedStates); Xiaodan Gu, Univ. of Massachusetts Amherst(United States); Deidre L. Olynick, Lawrence Berkeley
National Lab. (United States). . . . . . . . . . . . . . [8685-23]
Double patterning with dual hard mask for 28nm
node devices and below, Hubert Hody, Vasile
Paraschiv, Vecchio Guglielma, Sabrina Locorotondo,
Gustaf Lars Winroth, Raja Athimulam, Werner Boullart,
IMEC (Belgium). . . . . . . . . . . . . . . . . . . . . . . .  [8685-24]
Spin-on-carbon hardmask based on fullerene
derivatives for high-aspect ratio etching, Alex P.
Robinson, Andreas Frommhold, Richard E. Palmer, The
Univ. of Birmingham (United Kingdom). . . . . .  [8685-25]
Evaluating spin-on carbon materials at lowtemperatures for high-wiggling resistance, Michael
Weigand, Vandana Krishnamurthy, Yubao Wang, Qin
Lin, Douglas Guerrero, Brandy L. Carr, Sean Simmons,
Brewer Science, Inc. (United States). . . . . . . .  [8685-26]
Sub-30nm TiN/Ti/HfOx pillar formed by tone reverse
processes for RRAM applications, Wei-Su G. Chen,
Peng-Sheng Chen, Hong Chih Chen, Hung-Wen Wei,
Frederick T. Chen, Tzu-Kun Ku, Industrial Technology
Research Institute (Taiwan). . . . . . . . . . . . . . .  [8685-27]
Characteristics of selective PMMA etching forforming PS mask, Makoto Satake, Taku Iwase, Masaru
Kurihara, Nobuyuki Negishi, Yasuhiko Tada, Hiroshi
Yoshida, Hitachi, Ltd. (Japan). . . . . . . . . . . . .  [8685-28]
Yield enhancement of 3D NAND flash devices
through broadband bright-field inspection of thechannel hole process module, JungYoul Lee, IlSeok
Seo, Seong-Min Ma, HyeonSoo Kim, Jin-Woong Kim,
SK Hynix, Inc. (Korea, Republic of); DoOh Kim, KLATencor Corp. (United States); Andrew J. Cross, KLATencor England (United Kingdom); Jorge P. Fernandez,
KLA-Tencor Corp. (United States). . . . . . . . . . [8685-29]
Introduction of an advanced dual hard mask stackfor high resolution pattern transfer, Jan Paul, Matthias
Rudolph, Stefan Riedel, Xaver Thrun, Fraunhofer-Ctr.
Nanoelektronische Technologien (Germany); StephanWege, Plasway (Germany); Christoph K. Hohle,
Fraunhofer-Ctr. Nanoelektronische Technologien(Germany) . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8685-30]

to browse these new SPIE Press Books

Optical Scattering:
Measurements andAnalysis, Third Edition

Introduction to
Semiconductor
Manufacturing
Technology,
Second Edition

by John C. StoverVol. PM224

by Hong Xiao
Vol. PM220

Integrated
OptomechanicalAnalysis, Second
EditionMaxwell’s Equationsof Electrodynamics: An
Explanation

by David W. Ball
Vol. PM232

by Keith B. Doyle, Victor
L. Genberg, Gregory J.
MichelsVol. PM223

Commercialization
Basics for the
Photonics Industry

Field Guide to
Optomechanical
Design and Analysis
by Katie Schwertz, Jim
Burge
Vol. FG26

Field Guide to Lens
Designby Julie Bentley, Craig
Olson
Vol. FG27

by David Krohn
Vol. PM234

www.spie.org/publications

The importance of lithography and advanced etchtechniques for nanofabrication of MOS capacitor
with HfO2, Melkamu A. Belete, Royal Institute ofTechnology (KTH) (Sweden) . . . . . . . . . . . . . .  [8685-31]+1 360 676 3290

· help@spie.org·#SPIELitho35

Wednesday 27 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic Technologies V

Metrology, Inspection, and Process
Control for Microlithography XXVII

Session 7
Room: Conv. Ctr. 210 B
Wed 8:00 am to 9:40 am

Session 6
Room: Conv. Ctr. 230 B
Wed 8:00 am to 9:50 am

Session 8
Room: Conv. Ctr. 230 B
Wed 8:00 am to 9:50 am

OPC and Modeling

DSA Metrology and Inspection: Joint Session
with Conferences 8680 and 8681

DSA Metrology and Inspection: Joint Session
with Conferences 8680 and 8681

Session Chairs: Emily E. Gallagher, IBM Corp. (UnitedStates); Eric M. Panning, Intel Corp. (United States)
8:00 am: EUV multilayer defect compensation (MDC) by bothabsorber pattern modification and a new film deposition
technique, Linyong Pang, Masaki Satake, Ying Li, Danping Peng,
Peter Hu, Vikram L. Tolani, Anthony D. Vacca, Bob Gleason,
Luminescent Technologies (United States). . . . . . . . . . . . . [8679-29]
8:20 am: Evaluation of methods to improve EUV OPC model
accuracy, Tamer H. Coskun, Chris H. Clifford, Germain L. Fenger,
GLOBALFOUNDRIES Inc. (United States); Gek Soon Chua,
GLOBALFOUNDRIES Singapore (Singapore); Keith P. Standiford,
Ralph E. Schlief, Craig D. Higgins, Yi Zou, GLOBALFOUNDRIES Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8679-30]
8:40 am: Fast 3D thick mask model for full-chip EUVL
simulations, Peng Liu, Xiaobo Xie, Wei Liu, Brion Technologies,
Inc. (United States) and ASML US, Inc. (United States); Keith D.
Gronlund, Brion Technologies, Inc. (United States) . . . . . . [8679-31]
9:00 am: Position dependent process and proximity correction
and verification for extreme-ultraviolet lithography, Anwei
Liu, Cadence Design Systems, Inc. (United States); Huixiong
Dai, Applied Materials, Inc. (United States); Hsu-Ting Huang, Ali
Mokhberi, Xin Zheng, Cadence Design Systems, Inc. (United States);
Chris S. Ngai, Applied Materials, Inc. (United States). . . . . [8679-32]
9:20 am: Modeling strategies for EUV mask multilayer
defect dispositioning and repair, Andreas Erdmann, Peter
Evanschitzky, Fraunhofer-Institut für Integrierte System und
Bauelementetechnologie (Germany); Tristan Bret, Carl Zeiss SMS
GmbH (Germany); Rik Jonckheere, IMEC (Belgium). . . . . . [8679-33]
Coffee Break. . . . . . . . . . . . . . . . . . . . . .  Wed 9:40 am to 10:10 am

36

Session Chairs: Joy Y. Cheng, IBM Almaden Research Ctr.
(United States); Martha I. Sanchez, IBM Almaden Research
Ctr. (United States)

Session Chairs: Joy Y. Cheng, IBM Almaden Research Ctr.
(United States); Martha I. Sanchez, IBM Almaden Research
Ctr. (United States)

8:00 am: Defect source analysis of directed self-assembly
process (DSA of DSA) (Invited Paper), Venkat R. Nagaswami,
Ryota Harukawa, Mayur Suri, Stephane Durant, Jorge P. Fernandez,
Andrew J. Cross, KLA-Tencor Corp. (United States); Paulina A.
Rincon Delgadillo, Univ. of Chicago (United States) and IMEC
(Belgium); Roel Gronheid, IMEC (Belgium). . . . . . . . . . . . . [8680-20]

8:00 am: Defect source analysis of directed self-assembly
process (DSA of DSA) (Invited Paper), Venkat R. Nagaswami,
Ryota Harukawa, Mayur Suri, Stephane Durant, Jorge P. Fernandez,
Andrew J. Cross, KLA-Tencor Corp. (United States); Paulina A.
Rincon Delgadillo, Univ. of Chicago (United States) and IMEC
(Belgium); Roel Gronheid, IMEC (Belgium). . . . . . . . . . . . . [8680-20]

8:30 am: Line-edge roughness in directed self assembly, RicardoRuiz, Lei Wan, Elizabeth A. Dobisz, Kanaiyalal C. Patel, Yves-Andre
Chapuis, HGST (United States); Taku Iwase, Masaru Kurihara,
Hiroshi Yoshida, Hitachi, Ltd. (Japan); Thomas R. Albrecht, HGST
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-21]

8:30 am: Line-edge roughness in directed self assembly, RicardoRuiz, Lei Wan, Elizabeth A. Dobisz, Kanaiyalal C. Patel, Yves-Andre
Chapuis, HGST (United States); Taku Iwase, Masaru Kurihara,
Hiroshi Yoshida, Hitachi, Ltd. (Japan); Thomas R. Albrecht, HGST
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-21]

8:50 am: Application of optical CD metrology for alternative
lithography, Masafumi Asano, Akiko Kawamoto, Toshiba Corp.
(Japan); Kazuto Matsuki, Toshiba Machine Co., Ltd. (Japan);
Stephane Godny, Nova Measuring Instruments Ltd. (Israel);Tingsheng Lin, Koichi Wakamoto, Nova Measuring Instruments K.K.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-29]

8:50 am: Application of optical CD metrology for alternative
lithography, Masafumi Asano, Akiko Kawamoto, Toshiba Corp.
(Japan); Kazuto Matsuki, Toshiba Machine Co., Ltd. (Japan);
Stephane Godny, Nova Measuring Instruments Ltd. (Israel);Tingsheng Lin, Koichi Wakamoto, Nova Measuring Instruments K.K.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-29]

9:10 am: Hybrid approach to optical CD metrology of directed
self-assembly contacts, Stephane Godny, Nova Measuring
Instruments Ltd. (Israel); Masafumi Asano, Toshiba Corp. (Japan);
Koichi Wakamoto, Tim Lin, Nova Measuring Instruments Ltd.
(Israel); Akiko Kawamoto, Toshiba Corp. (Japan); Kazuto Matsuki,
Toshiba Machine Co., Ltd. (Japan); Cornel Bozdog, Nova Measuring
Instruments Inc. (United States); Ronen Urensky, Renan Milo, Nova
Measuring Instruments Ltd. (Israel). . . . . . . . . . . . . . . . . . . [8681-30]

9:10 am: Hybrid approach to optical CD metrology of directed
self-assembly contacts, Stephane Godny, Nova Measuring
Instruments Ltd. (Israel); Masafumi Asano, Toshiba Corp. (Japan);
Koichi Wakamoto, Tim Lin, Nova Measuring Instruments Ltd.
(Israel); Akiko Kawamoto, Toshiba Corp. (Japan); Kazuto Matsuki,
Toshiba Machine Co., Ltd. (Japan); Cornel Bozdog, Nova Measuring
Instruments Inc. (United States); Ronen Urensky, Renan Milo, Nova
Measuring Instruments Ltd. (Israel). . . . . . . . . . . . . . . . . . . [8681-30]

9:30 am: Three-dimensional characterization of block copolymer
lithography patterns using resonant x-ray scattering, R. Joseph
Kline, Daniel F. Sunday, Wen-li Wu, National Institute of Standards
and Technology (United States); Gila E. Stein, Univ. of Houston(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-22]

9:30 am: Three-dimensional characterization of block copolymer
lithography patterns using resonant x-ray scattering, R. Joseph
Kline, Daniel F. Sunday, Wen-li Wu, National Institute of Standards
and Technology (United States); Gila E. Stein, Univ. of Houston(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-22]

Coffee Break. . . . . . . . . . . . . . . . . . . . . . . Wed 9:50 am to 10:30 am

Coffee Break. . . . . . . . . . . . . . . . . . . . . . . Wed 9:50 am to 10:40 am

SPIE Advanced Lithography 2013·www.spie.org/al

Wednesday 27 February

Conference 8682

Conference 8683

Conference 8684

Advances in Resist Materials andProcessing Technology XXX

Optical Microlithography XXVIDesign for Manufacturability through
Design-Process

Session 8
Room: Marriott San Jose Ballroom Salon III
Wed 8:00 am to 10:00 am

Session 5
Room: Conv. Ctr. 210 C
Wed 8:00 am to 10:00 am

Room: Conv. Ctr. 211 B
8:10 am to 8:20 am
Opening Remarks

Novel Patterning Materials

Source and Mask Optimization (SMO) II

Session Chairs: Daniel P. Sanders, IBM Almaden Research
Ctr. (United States); Ramakrishnan Ayothi, JSR Micro, Inc.
(United States)

Session Chairs: Kazuhiro Takahashi, Canon Inc. (Japan);Geert Vandenberghe, IMEC (Belgium)

Session Chair: Mark E. Mason, Texas Instruments Inc.
(United States)

8:00 am: New spin-on metal hardmask materials for lithography
processes, Huirong Yao, Salem Mullen, Elizabeth Wolf, Dalil
Rahman, Clement T. Anyadiegwu, Douglas S. Mckenzie, Joonyeon
Cho, Munirathna Padmanaban, AZ Electronic Materials USA Corp.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-27]
8:20 am: Development of KrF hybrid resist for a dual-isolation
application, Steven J. Holmes, Kuang-Jung Chen, Sen Liu, Wusong Huang, Ranee Kwong, Chungsi J. Wu, Matthew Colburn,Kangguo Cheng, Bruce Doris, IBM Corp. (United States); Qing Liu,
STMicroelectronics (United States); Laurent Grenouillet, Maud Vinet,
CEA-LETI (France); Gregory Breyta, IBM Almaden Research Ctr.
(United States); Scott Luning, GLOBALFOUNDRIES Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-28]
8:40 am: Novel photoresists formed by molecular layer
deposition for sub-100nm patterning, Han Zhou, Stacey F. Bent,
Stanford Univ. (United States). . . . . . . . . . . . . . . . . . . . . . . [8682-29]
9:00 am: Long wavelength and chemically amplified photobase
generators, William K. Bell, William H. Heath, Carlton Grant Willson,
The Univ. of Texas at Austin (United States). . . . . . . . . . . . [8682-30]
9:20 am: Novel patternable and conducting metal-polymer
nanocomposite: a step toward advanced mutlifunctional
materials, Pedro Javier Rodríguez-Cantó, Mariluz Martinez-Marco,
Univ. de València (Spain); Rafael Abargues, Intenanomat S.L. (Spain);
Victor Latorre-Garrido, Juan P. Martínez-Pastor, Univ. de València
(Spain). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-31]
9:40 am: Metal-polymer nanocomposite resists: a step towardin situ nanopatterns metallization, Rafael Abargues, Intenanomat
S.L. (Spain); Mariluz Martinez-Marco, Pedro Javier Rodríguez-Cantó,
Jose Marques-Hueso, Juan P. Martinez-Pastor, Univ. de València
(Spain). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-32]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . Wed 10:00 am to 10:30 am

8:00 am: Enabling reverse-tone imaging for via levels using
attenuated phase-shift mask and source optimization, Bassem
Hamieh, STMicroelectronics (United States); Hyun Chol Choi,
SAMSUNG Electronics Co., Ltd. (United States); Burcin Erenturk,
GLOBALFOUNDRIES Inc. (United States); Wei Guo, IBM Corp.
(United States); Ayman Hamouda, Huikan Liu, GLOBALFOUNDRIES
Inc. (United States); Gregory R. McIntyre, Albany NanoTech (UnitedStates); Jason Meiring, IBM Corp. (United States); David Moreau,
STMicroelectronics (United States); Alan Thomas, Alexander Wei,
IBM Corp. (United States). . . . . . . . . . . . . . . . . . . . . . . . .  [8683-19]
8:20 am: Introducing a novel flow to estimate challenges
encountered while transitioning from RET development tomanufacturable Solution, Aasutosh Dave, Mentor Graphics Corp.
(United States); Yong Wah Cheng, GLOBALFOUNDRIES Singapore(Singapore); Omar Elsewefy, Mentor Graphics Corp. (United States);
Ying Gong, GLOBALFOUNDRIES Singapore (Singapore); Robin
Chia, Pat J. Lacour, Mentor Graphics Corp. (United States); Yee Mei
Foong, GLOBALFOUNDRIES Singapore (Singapore). . . .  [8683-20]

Session 1
Room: Conv. Ctr. 211 B
Wed 8:20 am to 10:05 am
Keynote Session
Session Chairs: Mark E. Mason, Texas Instruments Inc.
(United States); John L. Sturtevant, Mentor Graphics Corp.
(United States)
8:20 am: The future of lithography and its impact on design(Keynote Presentation), Chris A. Mack, lithoguru.com (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8684-1]
8:55 am: DFM: fabless perspective (Keynote Presentation), Jason
P. Cain, Advanced Micro Devices, Inc. (United States) . . .  [8684-2]
9:30 am: DFM: foundry perspective (Keynote Presentation), Luigi
Capodieci, GLOBALFOUNDRIES Inc. (United States) . . . .  [8684-3]
Coffee Break. . . . . . . . . . . . . . . . . . . . . Wed 10:05 am to 10:40 am

8:40 am: Manufacturability of computation lithography mask:
Current limit and requirements for sub-20nm node, Jin Choi, Rae
Won Lee, In-Yong Kang, Ji-Hyeon Choi, Ji Soong Park, ByungGook Kim, Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-21]
9:00 am: The impact of realistic source shape and flexibility
on source-mask optimization, Hajime Aoyama, Yasushi Mizuno,
Noriyuki Hirayanagi, Nikon Corp. (Japan); Hiro Izumi, Keiichi
Tajima, Nihon Synopsys G.K. (Japan); Joachim Siebert, Wolfgang
Demmerle, Synopsys GmbH (Germany); Tomoyuki Matsuyama,
Nikon Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-22]
9:20 am: Source and mask optimization to mitigate hotspots
in etch process, Yuko Kono, Yasunobu Kai, Sayaka Tamaoki,
Kazuyuki Masukawa, Takaki Hashimoto, Taiki Kimura, Ryota
Aburada, Toshiya Kotani, Toshiba Corp. (Japan). . . . . . .  [8683-23]
9:40 am: Global source optimization for MEEF and OPE, Ryota
Matsui, Tomoya Noda, Naonori Kita, Tomoyuki Matsuyama, Nikon
Corp. (Japan); Donis G. Flagello, Nikon Research Corp. of America(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-24]
Coffee Break. . . . . . . . . . . . . . . . . . . . . Wed 10:00 am to 10:30 am+1 360 676 3290

· help@spie.org·#SPIELitho37

Wednesday 27 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic Technologies V

Metrology, Inspection, and Process
Control for Microlithography XXVII

Session 8
Room: Conv. Ctr. 210 B
Wed 10:10 am to 12:10 pm

Session 7
Room: Conv. Ctr. Hall 3
Wed 10:30 am to 12:00 pm

EUV Resists

E-Beam Direct-Write for High-Voluime
Manufacturing II

Session Chairs: Chris S. Ngai, Applied Materials, Inc. (UnitedStates); Thomas I. Wallow, GLOBALFOUNDRIES Inc.
(United States)
10:10 am: Development status of EUV resist to break thetriangle, Takanori Kawakami, JSR Corp. (Japan); Kenji Hoshiko,
JSR Micro N.V. (Belgium); Ken Maruyama, JSR Micro, Inc. (UnitedStates); Makoto Shimizu, Tooru Kimura, JSR Corp. (Japan).[8679-34]
10:30 am: Evaluation of EUV resist performance withinterference lithography in the range of 22nm to 7nm half-pitch,
Yasin Ekinci, Michaela Vockenhuber, Mohamad Hojeij, Li Wang,
Nassir M. Mojarad, Paul Scherrer Institut (Switzerland). . . [8679-35]
10:50 am: Resist process applications to improve EUV
patterning, Karen E. Petrillo, SEMATECH North (USA); Takashi
Saito, TEL Technology Ctr., America, LLC (USA); Kyoungyong Cho,
Alexander Fritz, Cecilia Montgomery, Dominic Ashworth, Mark
Neisser, Stefan Wurm, SEMATECH North (USA); Lior Huki, Akiteru
Ko, Metz Andrew, TEL Technology Ctr., America, LLC(USA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8679-36]
11:10 am: Development of molecular resists derivatives for
EUV lithography, Patrick Green, Vipul Jain, Brad Bailey, The Dow
Chemical Co. (United States) . . . . . . . . . . . . . . . . . . . . . . . [8679-37]
11:30 am: Relationship between stochastic effect and resist
pattern defect in extreme-ultraviolet lithography, Takahiro
Kozawa, Osaka Univ. (Japan); Julius Joseph S. Santillan, Toshiro
Itani, EUVL Infrastructure Development Ctr., Inc. (Japan). [8679-38]
11:50 am: EUV-sensitive Si containing hard mask (Si-HM) for
PTD and NTD process in EUVL, Wataru Shibayama, Shuhei
Shigaki, Rikimaru Sakamoto, Nissan Chemical Industries, Ltd.
(Japan); Ryuji Onishi, Nissan Chemical Industries, Ltd. (Japan) and
EUVL Infrastructure Development Ctr., Inc. (Japan); Hiroaki Yaguchi,
Nissan Chemical Industries, Ltd. (Japan) and IMEC (Belgium); BangChing Ho, Nissan Chemical Industries, Ltd. (Taiwan). . . . . [8679-39]

Session Chairs: Shy-Jay Lin, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan); Hans Loeschner, IMS
Nanofabrication AG (Austria
10:30 am: MAPPER: progress toward a high-volume
manufacturing system, Marco Wieland, Guido de Boer, Remco J.
A. Jager, Jerry J. M. Peijster, Erwin Slot, Stijn W.H. K. Steenbrink,Michel Dansberg, MAPPER Lithography (Netherlands) . .  [8680-23]
11:00 am: Quantifying throughput improvements for electronbeam lithography using a suite of benchmark patterns, John
G. Hartley, State Univ. of New York at Albany (United States);
Nigel C. Crosland, Robert C. Dowling Jr., Vistec Lithography, Inc.
(United States); Philip C. Hoyle, Independent Consultant to Vistec
Lithography, Inc. (United Kingdom); Andrew McClelland, Cambeam
Systems Design Services, Ltd. (United Kingdom); Martin Turnidge,
James H. Smith II, Vistec Lithography, Inc. (United States).[8680-24]
11:20 am: Data delivery system for MAPPER using image
compression, Jeehong Yang, Qualcomm Inc. (United States); Serap
A. Savari, Texas A&M Univ. (United States) . . . . . . . . . . .  [8680-25]
11:40 am: Status of chemically amplified resists performances
to address line-width roughness and local CD uniformity
specifications for the MAPPER MATRIX pre-production
platform, Laurent Pain, Béatrice Icard, Claire Sourd, CEA-LETIMinatec (France); Julien Jussot, Univ. Joseph Fourier (France); Pablo
Wiedemann, Abdi Farah, MAPPER Lithography(Netherlands). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-26]
Lunch/Exhibition Break. . . . . . . . . . . . . . Wed 12:00 pm to 1:20 pm

Lunch/Exhibition Break. . . . . . . . . . . . . .  Wed 12:10 pm to 1:40 pm

38

SPIE Advanced Lithography 2013·www.spie.org/al

Session 9
Room: Conv. Ctr. 230 B
Wed 10:40 am to 12:00 pm
Optical Extensions
Session Chairs: Matthew J. Sendelbach, Nova Measuring
Instruments, Inc. (United States); Timothy F. Crimmins, Intel
Corp. (United States)
10:40 am: Sub-nanometer parametric uncertainties using
through-focus and angle-resolved optical metrology, Richard
M. Silver, Jing Qin, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson,
Francois Goasmat, National Institute of Standards and Technology(United States); Abraham Arceo, SEMATECH North (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-31]
11:00 am: TSV reveal height and bump dimension metrology
by the TSOM method, Victor H. Vartanian, SEMATECH North(United States); Ravikiran Attota, National Institute of Standards andTechnology (United States); Steve Olson, Robert Edgeworth, Pete
Moschak, Iqbal Ali, Craig Huffman, Harry Lazier, Elizabeth Lorenzini,
SEMATECH North (United States) . . . . . . . . . . . . . . . . . . . [8681-32]
11:20 am: Use of TSOM for sub-11nm node pattern defectdetection and HAR features, Abraham Arceo, Benjamin D. Bunday,
SEMATECH North (United States); Ravikiran Attota, National
Institute of Standards and Technology  (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-33]
11:40 am: Robustness analysis of nonlinear phase retrieval
from single-intensity measurement, Alessandro Polo, Silvania F.
Pereira, H. Paul Urbach, Technische Univ. Delft(Netherlands). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-34]
Lunch/Exhibition Break. . . . . . . . . . . . . . . Wed 12:00 pm to 1:20 pm

Wednesday 27 February

Conference 8682

Conference 8683

Conference 8684

Advances in Resist Materials andProcessing Technology XXX

Optical Microlithography XXVIDesign for Manufacturability through
Design-Process

Session 9
Room: Marriott San Jose Ballroom Salon III
Wed 10:30 am to 12:10 pm

Session 6
Room: Conv. Ctr. 210 C
Wed 10:30 am to 11:50 am

Session 2
Room: Conv. Ctr. 211 B
Wed 10:40 am to 11:40 am

E-Beam Patterning Materials

Process Technology I

DFDP: Design for Multipatterning

Session Chairs: Luisa D. Bozano, IBM Almaden Research
Ctr. (United States); Roel Gronheid, IMEC (Belgium)

Session Chairs: Pary Baluswamy, Micron Technology, Inc.
(United States); Wilhelm Maurer, Infineon Technologies AG(Germany)

Session Chairs: Lars W. Liebmann, IBM Corp. (UnitedStates); Juan-Antonio Carballo, Broadcom Corp. (UnitedStates)

10:30 am: Integrated scatterometry for tight overlay and CD
control to enable 20nm node wafer manufacturing., Jos P.
Benschop, Andre Engelen, Hugo Cramer, Michael Kubis, Paul C.
Hinnen, Hans van der Laan, Kaustuve Bhattacharyya, Jan Mulkens,
ASML Netherlands B.V. (Netherlands) . . . . . . . . . . . . . . .  [8683-25]

10:40 am: Diffraction pattern-based optimization of lithographic
targets for improved printability, Shayak Banerjee, IBM Corp.
(United States); Kanak B. Agarwal, IBM Austin Research Lab.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-4]

10:30 am: Advanced electron-beam resist requirements andchallenges, Andrew T. Jamieson, Bennett W. Olson, Maiying Lu,
Nathan E. Wilcox, Intel Corp. (United States). . . . . . . . . .  [8682-33]
10:50 am: Effects on electron scattering and resist
characteristics using assisting underlayers for e-beam directwrite lithography, Xaver Thrun, Kang-Hoon Choi, Martin Freitag,
Manuela S. Gutsch, Christoph K. Hohle, Katja Steidel, FraunhoferCtr. Nanoelektronische Technologien (Germany); Douglas Guerrero,
Brewer Science, Inc. (United States); Thiago R. Figueiro, Aselta
Nanographics (France) . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-34]
11:10 am: Sub-14 nm HSQ line patterning by e-beam dose
proximity effect correction assisted with designed line CD/pitch
split, Wei-Su G. Chen, Industrial Technology Research Institute(Taiwan); Chu-Ya Yang, BASF Electronic Materials Taiwan Ltd.
(Taiwan); Chiung Yu Lo, Hung-Wen Wei, Frederick T. Chen, TzuKun Ku, Industrial Technology Research Institute (Taiwan).[8682-35]
11:30 am: The evaluation of photo/e-beam complementarygrayscale lithography for high-topography 3D structure, LiyaYu, Richard Kasica, Lei Chen, Robert Newby, Kerry Siebein, Vincent
Luciani, National Institute of Standards and Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-36]
11:50 am: TBD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8682-84]

10:50 am: Mix-and-match overlay performance of the NSRS622D immersion scanner, Katsushi Makino, Takahisa Kikuchi,
Shinji Wakamoto, Satoru Sasamoto, Hongki Park, Nikon Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-26]
11:10 am: Interaction of scanner baseline correction, process
correction, and wafer alignment on process overlay, Koen
D’havé, David Laidler, Philippe J. Leray, Shaunee Y. Cheng, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-27]
11:30 am: Lithography imaging control by enhanced monitoringof light source performance, Paolo Alagna, Cymer, Inc. (Belgium);
Omar Zurita, Joshua J. Thornes, Cymer, Inc. (United States); Koen
D’havé, Lieve Van Look, Joost P. M. Bekaert, IMEC (Belgium);
Nakgeuon Seong, Gregory Rechsteiner, Ivan Lalovic, Cymer, Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-28]

11:00 am: Self-aligned double-patterning friendly configuration
for standard cell library considering placement impact, JhihRong Gao, Bei Yu, The Univ. of Texas at Austin (United States); Ru
Huang, Peking Univ. (China); David Z. Pan, The Univ. of Texas atAustin (United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-6]
11:20 am: Evaluation of cost-driven triple-patterning lithography
decomposition, Haitong Tian, Univ. of Illinois at Urbana-Champaign(United States); Hongbo Zhang, Synopsys, Inc. (United States);
Martin D. F. Wong, Univ. of Illinois at Urbana-Champaign (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-7]
Lunch Break . . . . . . . . . . . . . . . . . . . . . .  Wed 11:40 am to 1:40 pm

Lunch/Exhibition Break. . . . . . . . . . . . . . Wed 11:50 am to 1:20 pm

Lunch/Exhibition Break. . . . . . . . . . . . . . Wed 12:10 pm to 1:30 pm+1 360 676 3290

· help@spie.org·#SPIELitho

39

Wednesday 27 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic Technologies V

Metrology, Inspection, and Process
Control for Microlithography XXVII

Session 9
Room: Conv. Ctr. 210 B
Wed 1:40 pm to 3:20 pm

Session 8
Room: Conv. Ctr. Hall 3
Wed 1:20 pm to 3:10 pm

Session 10
Room: Conv. Ctr. 230 B
Wed 1:20 pm to 3:10 pm

High NA and Magnification

Nanoimprint Applications

LER/LWR

Session Chairs: Ted Liang, Intel Corp. (United States); Jan
Hendrik Peters, Carl Zeiss SMS GmbH (Germany)

Session Chairs: Elizabeth A. Dobisz, HGST (United States);
John G. Maltabes, Hewlett-Packard Labs. (United States)

1:40 pm: Mask effects for high-NA EUV: impact of NA, chief-rayangle, and demagnification (Invited Paper), Jens T. Neumann, Paul
Gräupner, Winfried M. Kaiser, Reiner Garreis, Carl Zeiss SMT GmbH
(Germany); Bernd Geh, Carl Zeiss SMT Inc. (United States).[8679-40]

1:20 pm: 30nm nanochannels with plasmonic bowtie nanoantenna: wafer scale device fabrication and applications forbiosensing, Irene Fernandez-Cuesta, Technical Univ. of Denmark(Denmark); Enrica Montinaro, Scott D. Dhuey, P. James Schuck,
Stefano Cabrini, Lawrence Berkeley National Lab. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-27]

Session Chairs: Benjamin D. Bunday, SEMATECH North(United States); Byoung-Ho Lee, SAMSUNG Electronics Co.,
Ltd. (Korea, Republic of)

2:10 pm: Considerations for high-numerical aperture EUV(Invited Paper), Harry J. Levinson, GLOBALFOUNDRIES Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-41]
2:40 pm: Projection optics for EUVL micro-field exposure tools
with a numerical aperture of 0.5, Holger K. Glatzel, Zygo Corp.
(United States); Dominic Ashworth, SEMATECH North (UnitedStates); Mark Bremer, Rodney Chin, Zygo Corp. (United States);
Kevin Cummings, SEMATECH North (United States); Luc Girard,
Zygo Corp. (United States); Michael Goldstein, SEMATECH North(United States); Eric M. Gullikson, Lawrence Berkeley National
Lab. (United States); Russell Hudyma, Hyperion Development LLC(United States); Jame Kennon, Robert Kestner, Louis A. Marchetti,
Zygo Corp. (United States); Patrick P. Naulleau, Lawrence Berkeley
National Lab. (United States); Regina Soufli, Lawrence Livermore
National Lab. (United States); Eberhard A. Spiller, Spiller X-Ray
Optics (United States). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-42]
3:00 pm: 2D EUV mask shadowing requirements for sub-14nm
node devices, Sudharshanan Raghunathan, Obert R. Wood II,
GLOBALFOUNDRIES Inc. (United States); Gregory R. McIntyre, IBM
Corp. (United States); Germain L. Fenger, GLOBALFOUNDRIES Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-43]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . . Wed 3:20 pm to 3:50 pm

1:50 pm: Lithography challenges for 2 Tdpsi bit patterned media
fabrication and beyond, Shuaigang Xiao, Xiaomin Yang, Kim Y.
Lee, Yautzong E. Hsu, Koichi Wago, Michael R. Feldbaum, Philip
Steiner, David S. Kuo, Seagate Technology LLC (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-28]
2:10 pm: Meter-long substrate nanopatterning using rollingmask optical lithography, Ian McMackin, Joseph B. Geddes III,
Mukti Aryal, Alfred F. Renaldo, Boris Kobrin, Rolith, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-29]
2:30 pm: Fabrication of silicon lines with sub-25nm full pitch
on 8-mm-wide circular tracks from directed self-assembly ofPS-b-PMMA, Lei Wan, Ricardo Ruiz, He H. Gao, Kanaiyalal C.
Patel, Thomas R. Albrecht, HGST (United States); Yi Cao, Jian Yin,
SungEun Hong, Guanyang Lin, AZ Electronic Materials USA Corp.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-30]
2:50 pm: High-performance wire grid polarizers using rollbased jet and flash imprint lithography, Sean Ahn, Mahadevan G.
Subramanian, Michael L. Miller, Jack Yang, Byung Jin Choi, Marlon
Menezes, Frank Y. Xu, Paul Hellebrekers, Dwayne L. LaBrake,
Douglas J. Resnick, S. V. Sreenivasan, Molecular Imprints, Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-31]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . .  Wed 3:10 pm to 3:30 pm

40

SPIE Advanced Lithography 2013·www.spie.org/al

1:20 pm: New methods for understanding and using metrology
for line-edge roughness (Invited Paper), Chris A. Mack, Lithoguru.
com (United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-35]
1:50 pm: Development of a calibration standard for sidewallroughness, Aaron Cordes, Benjamin D. Bunday, SEMATECH North(United States); Hugh Porter, GLOBALFOUNDRIES Inc. (UnitedStates); Sean Hand, Jason Osborne, Bruker Nano Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-36]
2:10 pm: Roughness of ArF and EUV resists with different
radiation exposure as investigated using three tools: AFM, SEM,
and ellipsometry, Byong Chon Park, Yong Jai Cho, Korea ResearchInstitute of Standards and Science (Korea, Republic of); Insung Kim,
Jeongho Yeo, SAMSUNG Electronics Co., Ltd. (Korea, Republicof) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-37]
2:30 pm: Data fusion methodology dedicated to CD-SEM LWR
measurement calibration, Nivea G. S. Figueiro, Johann Foucher,
CEA-LETI (France). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-38]
2:50 pm: Evaluation of methods for noise-free measurementof LER/LWR using synthesized SEM images, Vassilios
Constantoudis, Evangelos Gogolides, National Ctr. for Scientific
Research Demokritos (Greece). . . . . . . . . . . . . . . . . . . . . [8681-120]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . .  Wed 3:10 pm to 3:40 pm

Wednesday 27 February

Conference 8682

Conference 8683

Conference 8684

Advances in Resist Materials andProcessing Technology XXX

Optical Microlithography XXVIDesign for Manufacturability through
Design-Process

Session 10
Room: Marriott San Jose Ballroom Salon III
Wed 1:30 pm to 2:50 pm

Session 7
Room: Conv. Ctr. 210 C
Wed 1:20 pm to 3:00 pm

Session 3
Room: Conv. Ctr. 211 B
Wed 1:40 pm to 3:00 pm

EUV Materials, Processing, and Analysis

Modeling

Design Rules and Routing

Session Chairs: Todd Ross Younkin, Intel Corp. (Belgium);
Yoshio Kawai, Shin-Etsu Chemical Co., Ltd. (Japan)

Session Chairs: Bernd Geh, Carl Zeiss SMT Inc. (UnitedStates); Xuelong Shi, Semiconductor Manufacturing
International Corp. (China)

Session Chairs: Luigi Capodieci, GLOBALFOUNDRIES Inc.
(United States); Chi-Min Yuan, Freescale Semiconductor, Inc.
(United States)

1:20 pm: Solutions with precise prediction for thermal aberration
error in low-k1 immersion lithography, Kazuya Fukuhara, Toshiba
Corp. (Japan); Akiko Mimotogi, Toshiba Materials Co., Ltd. (Japan);Takuya Kono, Toshiba Corp. (Japan); Hajime Aoyama, Taro Ogata,
Naonori Kita, Tomoyuki Matsuyama, Nikon Corp. (Japan). [8683-29]

1:40 pm: Self-aligned double patterning compliant routing within-design physical verification flow, Jhih-Rong Gao, The Univ.
of Texas at Austin (United States); Harshdeep Jawandha, Prasad
Atkarc, Atul Walimbe, Bikram Baidya, Intel Corp. (United States);David Z. Pan, The Univ. of Texas at Austin (United States) . [8684-8]

1:40 pm: Compact OPC model optimization using emulateddata, Artak Isoyan, Synopsys, Inc. (United States); Thomas Mülders,
Synopsys GmbH (Germany); Lawrence S. Melvin III, Synopsys, Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-30]

2:00 pm: Pattern matching for identifying and resolving
nondecomposition-friendly designs for double-patterningtechnology (DPT), Lynn T. Wang, Vito Dai, Luigi Capodieci,
GLOBALFOUNDRIES Inc. (United States) . . . . . . . . . . . . . . [8684-9]

2:00 pm: A study on the automation of scanner matching, Yuan
He, Scott L. Light, Erik R. Byers, Craig Hickman, Micron Technology,
Inc. (United States); Alexander Serebryakov, ASML Netherlands
B.V. (Netherlands); Vivek Jain, Ronald J. G. Goossens, Zhi-Yuan
Nui, Peter Engblom, ASML US, Inc. (United States); Scott Larson,
ASML Boise (United States); Bernd Geh, Carl Zeiss SMT Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-31]

2:20 pm: Detailed routing with advanced flexibility and incompliance with self-aligned double-patterning constraints,
Fumiharu Nakajima, Chikaaki Kodama, Toshiba Corp. (Japan);
Hirotaka Ichikawa, Toshiba Microelectronics Corp. (Japan); Koichi
Nakayama, Toshiba Corp. (Japan); Shigeki Nojima, Toshiba Materials
Co., Ltd. (Japan); Toshiya Kotani, Toshiba Corp. (Japan); Shoji
Mimotogi, Toshiba Materials Co., Ltd. (Japan); Shinji Miyamoto,Toshiba Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-10]

1:30 pm: Progress in resolution, sensitivity, and line-widthroughness of EUV chemically-amplified resists, James W.
Thackeray, Vipul Jain, James F. Cameron, Paul LaBeaume, Suzanne
M. Coley, Owendi Ongayi, Aaron Rachford, Dow Electronic Materials(United States); John J. Biafore, Univ. de València (Spain). [8682-39]
1:50 pm: Negative-tone imaging process and materials for EUV
lighography, Shinji Tarutani, Takanobu Takeda, Wataru Nihashi,
Shuuji Hirano, Natsumi Yokokawa, Hiroo Takizawa, FUJIFILM Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-40]
2:10 pm: Underlayer and rinse materials for improving EUV
resist performance, Georg Pawlowski, Go Noya, Yuriko Matsuura,
Maki Ishii, AZ Electronic Materials (Japan) K.K. (Japan); Huirong
Yao, Salem Mullen, Joonyeon Cho, Munirathna Padmanaban, AZ
Electronic Materials USA Corp. (United States) . . . . . . . . . [8682-41]
2:30 pm: High-absorbing resists based on trifluoromethacrylatevinyl ether copolymers for EUV lithography, Matthew D.
Christianson, Owendi Ongayi, David Valeri, Matthew M. Meyer, Mike
D. Wagner, Dow Chemical Co. (United States). . . . . . . . . . [8682-42]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . . . Wed 2:50 pm to 3:30 pm

2:20 pm: Adjustment of image decomposition mode andreflection criterion focusing on critical dimension uniformity andexposure dose effectiveness under diffraction effects in optical
microlithography using a digital micromirror device, ManseungSeo, Haeryung Kim, Tongmyong Univ. of Information Technology(Korea, Republic of). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-32]
2:40 pm: Simulation of spacer-based SADP (self-aligned doublepatterning) for 15nm half pitch, Stewart A. Robertson, KLA-Tencor
Texas (United States); Patrick Wong, Vincent Wiaux, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-33]

2:40 pm: Pioneering an on-the-fly simulation technique for thedetection of layout-dependent effects during IC design phase,
Amr M. S. T. Abdelwahed, Mentor Graphics Egypt (Egypt); Rami
Fathy, Mentor Graphics Corp. (Canada); Ahmed Ramadan, Mentor
Graphics Egypt (Egypt). . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-11]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . . . Wed 3:00 pm to 3:30 pm

Coffee Break. . . . . . . . . . . . . . . . . . . . . . . . Wed 3:00 pm to 3:30 pm+1 360 676 3290

· help@spie.org·#SPIELitho41

Wednesday 27 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection, and Process Control for
Microlithography XXVII

Session 10
Room: Conv. Ctr. 210 B
Wed 3:50 pm to 5:50 pm

Session 9
Room: Conv. Ctr. Hall 3
Wed 3:30 pm to 5:20 pm

Mask II

Design for Manufacturability for DSA:
Joint Session with Conferences 8680
and 8684

Session Chairs: Stanley E. Stokowski, KLATencor Corp. (United States); Tsutomu Shoki,
HOYA Corp. (Japan)
3:50 pm: Commissioning a new EUV Fresnel
zoneplate mask-imaging microscope forlithography generations reaching 8nm, Kenneth A.
Goldberg, Iacopo Mochi, Markus P. Benk, James B.
Macdougall, Patrick P. Naulleau, Lawrence Berkeley
National Lab. (United States). . . . . . . . . . . [8679-44]
4:10 pm: The role of defect characterization in
the progression toward defect-free EUV mask
blanks, Jenah Harris-Jones, Emilio Stinzianni, C. C.
Lin, Tonmoy Chakraborty, SEMATECH North (UnitedStates); Shuiqing Hu, Lars Mininni, Chanmin Su,
Bruker Nano Inc. (United States). . . . . . . .  [8679-45]
4:30 pm: Experimental phase defect printability
evaluation using a programmed phase defect in
EUVL mask, Tsuneo Terasawa, Tsuyoshi Amano,
Sunghyun Oh, Takeshi Yamane, Hidehiro Watanabe,
EUVL Infrastructure Development Ctr., Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-46]
4:50 pm: EUV defect characterization using
quantitative nanomechanical mechanical andnanoelectric mapping, Shuiqing Hu, Bruker Nano
Inc. (United States); Jenah Harris-Jones, SEMATECHNorth (United States); Lars Mininni, Bruker Nano Inc.
(United States); Tonmoy Chakraborty, SEMATECHNorth (United States); Chanmin Su, Bruker Nano Inc.
(United States). . . . . . . . . . . . . . . . . . . . . .  [8679-47]
5:10 pm: Challenges in EUV mask blankdeposition for high-volume manufacturing, Vibhu
Jindal, Patrick A. Kearney, Alin O. Antohe, Milton C.
Godwin, Arun J. Kadaksham, Ranganath Teki, Frank
Goodwin, SEMATECH North (United States).[8679-48]
5:30 pm: Extending Ru capping layer durability
under physical force cleaning, SherJang Singh,
SUSS MicroTec Inc. (United States). . . . .  [8679-49]

42

Session Chairs: Benjamen M. Rathsack, Tokyo
Electron America, Inc. (United States); Lars W.
Liebmann, IBM Corp. (United States)
3:30 pm: Directed self-assembly pattern generationof basic FinFET circuit constructs (Invited Paper),Hsinyu Tsai, Hiroyuki Miyazoe, IBM Thomas J.
Watson Research Ctr. (United States); Joy Y. Cheng,
Jed W. Pitera, IBM Almaden Research Ctr. (UnitedStates); Chi-Chun  Liu, Steven J. Holmes, IBM Albany
Nanotech (United States); Daniel P. Sanders, IBM
Almaden Research Ctr. (United States); Eric A. Joseph,
IBM Thomas J. Watson Research Ctr. (United States);
Lars W. Liebmann, Kafai Lai, IBM Corp. (United States);
Michael A. Guillorn, IBM Thomas J. Watson Research
Ctr (United States). . . . . . . . . . . . . . . . . . . . . . [8680-32]
4:00 pm: Rethinking ASIC design with nextgeneration lithography and process integration,
Kaushik Vaidyanathan, Carnegie Mellon Univ. (UnitedStates); Lars W. Liebmann, Kafai Lai, IBM Corp. (UnitedStates); Andrzej J. Strojwas, Larry Pileggi, Carnegie
Mellon Univ. (United States) . . . . . . . . . . . . . . [8684-12]
4:20 pm: Fabrication of deterministically isolated
gratings through directed self-assembly of block
copolymers, Gregory S. Doerk, Joy Y. Cheng, Charles
T. Rettner, Srinivasan Balakrishnan, Noel Arellano,
Melia Tjio, Hoa Truong, Daniel P. Sanders, IBM
Almaden Research Ctr. (United States). . . . . [8680-33]
4:40 pm: Computational solution of inverse
directed self-assembly problem, Azat M. Latypov,
GLOBALFOUNDRIES Inc. (United States) . . . [8680-34]
5:00 pm: Design strategy of small topographicalguiding templates for sub-15nm integrated circuits
contact hole patterns using block copolymer
directed self assembly, He Yi, Stanford Univ. (UnitedStates); Xin-Yu Bao, Stanford Univ. (United States) andApplied Materials, Inc., (United States); Richard Tiberio,
H. S. Philip Wong, Stanford Univ. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-35]

SPIE Advanced Lithography 2013

Session 11
Room: Conv. Ctr. 230 B
Wed 3:40 pm to 5:40 pm
Overlay
Session Chairs: Ofer Adan, Applied Materials(Israel); Christopher J. Raymond, Nanometrics
Inc. (United States)
3:40 pm: Mueller polarimetry in the back focal plane:
new advances in overlay measurements, Tatiana
Novikova, Bicher Haj Ibrahim, Jacqueline Tran, Ecole
Polytechnique (France); Cyril Vannuffel, CEA-LETI(France); Christophe Constancias, CEA-LETI-Minatec(France); Antonello De Martino, Ecole Polytechnique(France). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-39]
4:00 pm: Diffraction-based overlay and image-based
overlay on production flow for advanced technology
node, Yoann Blancquaert, CEA-LETI (France);
Christophe Dezauzier, STMicroelectronics (France);
Jerome Depre, Jan Beltman, Mohamed Miqyass, ASML
Netherlands B.V. (Netherlands). . . . . . . . . . . . .  [8681-40]

Room: Conv. Ctr. 230 B
7:30 pm to 9:00 pm
Panel Discussion
Making a Business Case for Disruptive
Metrology Technologies: What Should
We Invest In?
Panelists: John A. Allgair,
GLOBALFOUNDRIES Inc.; Eric Solecky,
IBM Corp.; Michael Grumski, Intel Corp.;
R. Joseph Kline, National Institute ofStandards and Technology; David K.
Lam, Multibeam Corp.; Mingwei Li, KLATencor Corp.
Moderators: Alok Vaid,
GLOBALFOUNDRIES, Inc.; Benjamin D.
Bunday, SEMATECH North; Matthew
J. Sendelbach, Nova Measuring
Instruments, Inc.  

Continuing decrease in the device
dimensions, combined with complex
disruptive materials and 3D architectures
have placed increasing demands on
metrology tools. Over the years, the4:20 pm: Reduction of image-based ADI-to-AEI
industry has implemented several
overlay inconsistency with improved algorithm, Yeninnovative solutions to alleviate these
Liang Chen, Taiwan Semiconductor Manufacturing Co.,
Ltd. (Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-41] challenges, but most of them have been
incremental improvements rather than
4:40 pm: Fundamentals of overlay measurement and revolutionary. There seems to be inertia
inspection using scanning electron microscope,
preventing the adoption of revolutionary
Takeshi Kato, Osamu Inoue, Yutaka Okagawa, Satoru
and disruptive measurement techniques,
Yamaguchi, Koji Arai, Hitachi High-Technologies Corp.
some of which have been in the limelight(Japan) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8681-42] for about a decade. The panel will focus on
5:00 pm: DCM: device correlated metrology for overlay three key disruptive solutions which havemeasurements, Charlie Chen, George K. C. Huang,
been identified as potential next-generation
Yuan Chi Pai, Jimmy C. H. Wu, Yu Wei Cheng, Simon
metrology and inspection technologies
for some time – CD-SAXS, Multi-ebeamC. C. Hsu, Chun Chi Yu, United Microelectronics Corp.
based inspection, and He-ion imaging.
(Taiwan); Nuriel Amir, KLA-Tencor Israel (Israel); Dongsub
Our panel of experts will come from a mix
Choi, KLA-Tencor Korea (Korea, Republic of); Talof IC manufacturers, suppliers, academia,
Itzkovich, KLA-Tencor Israel (Israel); David C. Tien, KLATencor Corp. (United States); Eros Huang, Kelly T. L. Kuo, and research consortia. Panelists will
review the technical, business and financial
KLA-Tencor Taiwan (Taiwan); Yutaka Okagawa, Hitachi
aspects of these technologies and also
High-Technologies Corp. (Japan); Takeshi Kato, Hitachi
try to form a consensus on whether they
High-Tech Trading Corp. (Japan); Osamu Inoue, Hitachi
are really needed to meet current industry
High-Technologies Corp. (Japan); Luis Huang, Matthew
Hsu, Hitachi High-Technologies Corp. (Taiwan). [8681-43] requirements. The panel will recommend
whether the industry should continue to
5:20 pm: In-die overlay metrology by using CD-SEM,
invest in these technologies, and if so,
Osamu Inoue, Takeshi Kato, Yutaka Okagawa, Hiroki
then what it will “actually” take to get them
Kawada, Hitachi High-Technologies Corp.
(Japan) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-70] implemented in HVM.

·

www.spie.org/al

Wednesday 27 February

Conference 8682

Conference 8683

Conference 8684

Advances in Resist Materials andProcessing Technology XXX

Optical Microlithography XXVIDesign for Manufacturability through
Design-Process

Session 11
Room: Marriott San Jose Ballroom Salon III
Wed 3:30 pm to 5:10 pm

Session 8
Room: Conv. Ctr. 210 C
Wed 3:30 pm to 5:30 pm

Session 4
Room: Conv. Ctr. Hall 3
Wed 3:30 pm to 5:20 pm

Fundamental Studies of RLS Behavior

Process Technology II

Session Chairs: Sean D. Burns, IBM Corp. (United States);
Scott W. Jessen, Texas Instruments Inc. (United States)

Session Chairs: Sukjoo Lee, SAMSUNG Electronics Co.,
Ltd. (Korea, Republic of); Nigel R. Farrar, Cymer, Inc.
(United States)

Design for Manufacturability for DSA: Joint
Session with Conferences 8680 and 8684

3:30 pm: The impact on LWR of resist formulation parameters,
Kyoungyoung Cho, Mark Neisser, SEMATECH North (UnitedStates); Shinji Tarutani, Naoki Inoue, Hideaki Tsubaki, FUJIFILM
Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-43]
3:50 pm: Monitoring the evolution of line-edge roughness (LER)
during development using an analog of quenched flow kinetics,
Martha I. Sanchez, Linda K. Sundberg, Gregory M. Wallraff, IBM
Almaden Research Ctr. (United States); William D. Hinsberg,
Columbia Hill Technical Consulting (United States); Ramakrishnan
Ayothi, Yoshi Hishiro, JSR Micro, Inc. (United States); Luisa D.
Bozano, Hoa Truong, IBM Almaden Research Ctr. (United States);
Karen E. Petrillo, IBM Corp. (United States). . . . . . . . . . . . [8682-44]
4:10 pm: Breakthrough of RLS trade-off relation in EUV resists
studied by picosecond and femtosecond pulse radiolysis, Seiichi
Tagawa, Osaka Univ. (Japan) and Japan Science and Technology
Agency (Japan); Takafumi Kondoh, Osaka Univ. (Japan); Satoshi
Enomoto, Ravi Joshi, Akihiro Oshima, Osaka Univ. (Japan) andJapan Science and Technology Agency (Japan); Jinfeng Yang,
Yoichi Yoshida, Osaka Univ. (Japan) . . . . . . . . . . . . . . . . . [8682-45]
4:30 pm: Evaluation of sensitivity for positive-tonenonchemically and chemically amplified resists using ionizedradiation: EUV, x-ray, electron, and ion-induced reactions,
Akihiro Oshima, Osaka Univ. (Japan) and JST-CREST (Japan);
Tomoko G. Oyama, Japan Atomic Energy Agency (Japan) andJapan Society for the Promotion of Science (Japan); Masakazu
Washio, Waseda Univ. (Japan); Seiichi Tagawa, Osaka Univ. (Japan)
and JST-CREST (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-46]
4:50 pm: Study on dissolution behavior of polymer-bound andpolymer-blended photo-acid generator (PAG) resists, Hiroki
Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Osaka Univ.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8682-47]
Conference End.

3:30 pm: A comparative study of self-aligned quadruple andsextuple patterning techniques for sub-15nm IC scaling, Yijian
Chen, Weiling Kang, Qi Cheng, Peking Univ. Shenzhen Graduate
School (China). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-34]
3:50 pm: Grayscale lithography: 3D structuring and thickness
control, Marcel Heller, Dieter Kaiser, Maik Stegemann, Jens
Schneider, Nicolo Morgana, Georg Holfeld, Daniel Sarlette, Infineon
Technologies Dresden (Germany). . . . . . . . . . . . . . . . . . . . [8683-35]
4:10 pm: Modification of an attenuated phase-shift mask forsingle-exposure double and multiple patterning, Frederick T.
Chen, Wei-Su G. Chen, Ming-Jinn Tsai, Tzu-Kun Ku, Industrial
Technology Research Institute (Taiwan). . . . . . . . . . . . . . . [8683-36]
4:30 pm: Avoiding wafer-print artifacts in spacer is dielectric(SID) patterning, Gerard Luk-Pat, Benjamin D. Painter, Alexander
Miloslavsky, Synopsys, Inc. (United States); Peter De Bisschop,
IMEC (Belgium); Adam Beacham, Synopsys, Inc. (Canada); Kevin
Lucas, Synopsys, Inc. (United States). . . . . . . . . . . . . . . . . [8683-37]
4:50 pm: Best focus shift mitigation for extending the depth offocus, Anna Szucs, Jonathan Planchot Jr., Vincent Farys, Emek
Yesilada, Clovis Alleaume, STMicroelectronics (France); Laurent
Depre, Russel J. Dover, Brion Technologies, Inc. (United States);
Cecile Gourgon, Maxime Besacier, CEA-LETI (France); Angelique
Nachtwein, Paul Rusu, ASML Netherlands B.V.
(Netherlands). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-38]
5:10 pm: Wafer sublayer impact in OPC/ORC models for 2xnm
node implant layers, Elodie Sungauer, Jean-Christophe  Michel,Jean-Christophe Le Denmat, Emek Yesilada, Frederic Robert,
STMicroelectronics (France); Song Lan, Mu Feng, Xiaobo Xie,
Laurent Depre, Russel J. Dover, ASML US, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-39]+1 360 676 3290

· help@spie.org·#SPIELitho

Session Chairs: Benjamen M. Rathsack, Tokyo Electron
America, Inc. (United States); Lars W. Liebmann, IBM Corp.
(United States)
3:30 pm: Directed self-assembly pattern generation of basic
FinFET circuit constructs (Invited Paper), Hsinyu Tsai, Hiroyuki
Miyazoe, IBM Thomas J. Watson Research Ctr. (United States);
Joy Y. Cheng, Jed W. Pitera, IBM Almaden Research Ctr. (UnitedStates); Chi-Chun  Liu, Steven J. Holmes, IBM Albany Nanotech(United States); Daniel P. Sanders, IBM Almaden Research Ctr.
(United States); Eric A. Joseph, IBM Thomas J. Watson Research
Ctr. (United States); Lars W. Liebmann, Kafai Lai, IBM Corp. (UnitedStates); Michael A. Guillorn, IBM Thomas J. Watson Research Ctr(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-32]
4:00 pm: Rethinking ASIC design with next-generation
lithography and process integration, Kaushik Vaidyanathan,Carnegie Mellon Univ. (United States); Lars W. Liebmann, Kafai
Lai, IBM Corp. (United States); Andrzej J. Strojwas, Larry Pileggi,
Carnegie Mellon Univ. (United States) . . . . . . . . . . . . . . . . [8684-12]
4:20 pm: Fabrication of deterministically isolated gratings
through directed self-assembly of block copolymers, Gregory S.
Doerk, Joy Y. Cheng, Charles T. Rettner, Srinivasan Balakrishnan,
Noel Arellano, Melia Tjio, Hoa Truong, Daniel P. Sanders, IBM
Almaden Research Ctr. (United States). . . . . . . . . . . . . . . [8680-33]
4:40 pm: Computational solution of inverse directed selfassembly problem, Azat M. Latypov, GLOBALFOUNDRIES Inc.
(United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-34]
5:00 pm: Design strategy of small topographical guiding
templates for sub-15nm integrated circuits contact holepatterns using block copolymer directed self assembly, He Yi,
Stanford Univ. (United States); Xin-Yu Bao, Stanford Univ. (UnitedStates) and Applied Materials, Inc., (United States); Richard Tiberio,
H. S. Philip Wong, Stanford Univ. (United States). . . . . . . [8680-35]

43

Wednesday 27 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The following posters will be on display after 10:00 am on Wednesday. The interactive poster session with authors in attendance will be Wednesday evening from 6:00 to 8:00 pm. All
symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will beavailable for discussion. Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Wednesday Poster Reception
Sponsors
eption  Conf. 8679 Extreme Ultraviolet(EUV) Lithography IV
Session Chairs: Patrick P. Naulleau,
Lawrence Berkeley National Lab.
(United States); Obert R. Wood II,
GLOBALFOUNDRIES Inc. (United States)
The limit of OAI and AttPSM in EUVL, ShinnSheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Taiwan
Semiconductor Manufacturing Co. Ltd. (Taiwan);Jack J. H. Chen, Anthony Yen, TSMC Taiwan(Taiwan); Burn J. Lin, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan). . . . . . . .  [8679-56]
Experimental verification of EUV mask
limitations at high-numerical apertures, Rikon
Chao, Univ. of California, Berkeley (United States);Paul Gräupner, Carl Zeiss SMT GmbH (Germany);
Eric M. Gullikson, Lawrence Berkeley National
Lab. (United States); Seong-Sue  Kim, SAMSUNGElectronics Co., Ltd. (Korea, Republic of); Jens
T. Neumann, Carl Zeiss SMT GmbH (Germany);
Ryan H. Miyakawa, Lawrence Berkeley National
Lab. (United States); Hwan-Seok  Seo, SAMSUNGElectronics Co., Ltd. (Korea, Republic of); Andrew
R. Neureuther, Univ. of California, Berkeley (UnitedStates); Patrick P. Naulleau, Lawrence Berkeley
National Lab. (United States). . . . . . . . . . . [8679-57]
Homogeneity improvement of TiO2-SiO2
glass synthesized by the soot method and its
evaluation using the ultrasonic measurement
system, Masahiro Kawagishi, Junko Konishi,
Masaaki Takata, AGC Electronics Co., Ltd. (Japan);Jun-ichi Kushibiki, Mototaka Arakawa, Yuji Ohashi,
Tohoku Univ. (Japan). . . . . . . . . . . . . . . . .  [8679-58]
Inspection and compositional analysis of sub20 nm EUV mask blank defects by a thin film
decoration technique, Vibhu Jindal, Patrick A.
Kearney, Alin O. Antohe, Arun J. Kadaksham, Emilio
Stinzianni, Jenah Harris-Jones, Frank Goodwin,
SEMATECH North (United States); Takahiro Onoue,
HOYA Corp. (Japan). . . . . . . . . . . . . . . . .  [8679-59]

44

Impact of the phase defect structure on wafer
printability and an actinic dark-field blankinspection signal, Tsuyoshi Amano, Tsuneo
Terasawa, EUVL Infrastructure Development Ctr.,
Inc. (Japan) . . . . . . . . . . . . . . . . . . . . . . . .  [8679-60]

Effect of phase defect shape for ABI signal
intensity and printed CD on wafer withsimulation, Noriaki Takagi, Yukiyasu Arisawa,
Tsuneo Terasawa, EUVL Infrastructure Development
Ctr., Inc. (Japan) . . . . . . . . . . . . . . . . . . . .  [8679-68]

Modeling studies on alternative EUV mask
concepts for higher NA, Andreas Erdmann, Tim
Fühner, Peter Evanschitzky, Fraunhofer-Institut fürIntegrierte System und Bauelementetechnologie(Germany); Jens T. Neumann, Johannes Ruoff, Paul
Gräupner, Carl Zeiss SMT GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-61]

Mathematical model for calculating speckle
contrast through focus, Rene A. Claus, Univ. of
California, Berkeley (United States) and Lawrence
Berkeley National Lab. (United States); Andrew R.
Neureuther, Univ. of California, Berkeley (UnitedStates); Patrick P. Naulleau, Lawrence Berkeley
National Lab. (United States). . . . . . . . . . . [8679-69]

Low-thermal expansion material cleaningand optimization for EUV blank deposition at
SEMATECH, Arun J. Kadaksham, Teki Ranganatah,
Matthew House, Milton C. Godwin, Patrick A.
Kearney, Vibhu Jindal, Alin O. Antohe, Jenah HarrisJones, Andy Ma, Frank Goodwin, SEMATECH North(United States). . . . . . . . . . . . . . . . . . . . . .  [8679-62]

Evaluating the effect of EUV multilayer buried
defects on feature printability using a stochastic
resist model, Trey Graves, KLA-Tencor Texas(United States). . . . . . . . . . . . . . . . . . . . . .  [8679-70]

Local area EUV mask patterning for native defectanalysis, Adam Lyons, Univ. at Albany (UnitedStates); Ranganath Teki, SEMATECH North (UnitedStates); John G. Hartley, Univ. at Albany (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-63]
Evaluation of novel projection electron
microscopy (PEM) optics for EUV mask
inspection, Ryoichi Hirano, Hidehiro Watanabe,
Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa,
EUVL Infrastructure Development Ctr., Inc. (Japan);
Masahiro Hatakeyama, Takeshi Murakami, EBARA
Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . .  [8679-64]
Registration error improvement of fiducial
mark on EUVL mask with MIRAI EUV ABIprototype, Tetsunori Murachi, EUVL Infrastructure
Development Ctr., Inc. (Japan). . . . . . . . .  [8679-65]
Study of simulated projection electron
microscope images of defects on EUV mask,
Susumu Iida, Tsuyoshi Amano, Ryoichi Hirano,
Tsuneo Terasawa, Hidehiro Watanabe, EUVL
Infrastructure Development Ctr., Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-66]
Development of 3D Monte Carlo simulations
for predicting multilayer geometry of pit-type
EUV defects, Robert F. Spivey III, Rensselaer
Polytechnic Institute (United States); Ranganath
Teki, SEMATECH North (United States); Toh-Ming
Lu, Rensselaer Polytechnic Institute (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-67]

Factors affecting resist-outgas qualification:
dependence of contamination on dose, exposure
time, and wafer area, Charles Tarrio, Shannon B.
Hill, Robert F. Berg, Steven Grantham, National
Institute of Standards and Technology (UnitedStates); Nadir S. Faradzhev, Johns Hopkins Univ.
(United States); Thomas B. Lucatorto, National
Institute of Standards and Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-71]
Status of EUV radiometry at PTB, ChristianLaubis, Annett Barboutis, Martin Biel, Christian
Buchholz, Benjamin Dubrau, Andreas Fischer,Anne Hesse, Jana Puls, Christian Stadelhoff, Victor
Soltwisch, Frank Scholze, Physikalisch-Technische
Bundesanstalt (Germany) . . . . . . . . . . . . .  [8679-72]
Hartmann wavefront sensor for EUV radiation,
Klaus Mann, Bernhard Flöter, Tobias Mey, Bernd
Schäfer, Laser-Lab. Göttingen e.V. (Germany);
Barbara Keitel, Elke Plönjes, Kai Tiedtke, Deutsches
Elektronen-Synchrotron (Germany). . . . . .  [8679-73]
A reverse design method for EUV lithography
illumination system, Yanqiu Li, Qiuli Mei, Fei Liu,
Beijing Institute of Technology (China). . .  [8679-74]
Patterning at 6.5nm wavelength using
interference lithography, Nassir M. Mojarad,
Michaela Vockenhuber, Li Wang, Paul Scherrer
Institut (Switzerland); Bernd Terhalle, Tesa Scribos
GmbH (Germany); Yasin Ekinci, Paul Scherrer
Institut (Switzerland) . . . . . . . . . . . . . . . . .  [8679-75]
Simulation of the relationship between
sensitivity and LWR in an EUV resist withphoto-decomposable quencher, Suchit Bhattarai,
Andrew R. Neureuther, Univ. of California, Berkeley(United States); Patrick P. Naulleau, Lawrence
Berkeley National Lab. (United States). . .  [8679-76]

SPIE Advanced Lithography 2013·www.spie.org/al

Relation between sensitivity and resolution inpolymer bound PAG and polymer blend PAG,
Satoshi Enomoto, Tuan N. Dang, Seiichi Tagawa,
Osaka Univ. (Japan) . . . . . . . . . . . . . . . . .  [8679-77]
Assessment of out-of-band radation from EUV
AD1 and investigation of spectral sensitivity
resists in the DUV region, Kyoungyoung Cho,
Alexander Friz, Mark Neisser, SEMATECH North(United States); Sang-In Han, ASML US, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-78]
Stochastic resist patterning simulation using
PSM for EUV lithography, Seongchul Hong, Jinho
Ahn, Seejun Jeong, Jae Uk Lee, Hanyang Univ.
(Korea, Republic of); Jonggul Doh, Hanyang Univ.
(Korea, Republic of) and SAMSUNG Electronics
Co., Ltd. (Korea, Republic of); Seung Min Lee,
Jongseok Kim, Hanyang Univ. (Korea, Republicof) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-79]
Quencher distribution engineering of out-ofband insensitive EUV resists: experiments
and stochastic simulation, Shang-Chieh Chien,
Shu-Hao Chang, TSMC Taiwan (Taiwan); Jui-Ching
Wu, Taiwan Semiconductor Manufacturing Co. Ltd.
(Taiwan); Jack J. H. Chen, Anthony Yen, TSMC
Taiwan (Taiwan). . . . . . . . . . . . . . . . . . . . .  [8679-80]
Evaluation and prediction of resist sensitivity:
chemically amplified resists for EB, 13.5nm EUV,
and 6x-m EUV extension, Tomoko G. Oyama,
Japan Atomic Energy Agency (Japan) and Japan
Society for the Promotion of Science (Japan);Akihiro Oshima, Tuan N. Dang, Osaka Univ. (Japan)
and JST-CREST (Japan); Satoshi Enomoto, Osaka
Univ. (Japan); Masakazu Washio, Waseda Univ.
(Japan); Seiichi Tagawa, Osaka Univ. (Japan) andJST-CREST (Japan). . . . . . . . . . . . . . . . . . [8679-81]
Study of LWR reduction and pattern collapse
suppression for 16nm node EUV resists, Eishi
Shiobara, Yukiko Kikuchi, Toshiro Itani, EUVL
Infrastructure Development Ctr., Inc.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-82]
Reaction mechanisms of various chemicallyamplified EUV and EB resist, Satoshi Enomoto,Tuan N. Dang, Akihiro Oshima, Seiichi Tagawa,
Osaka Univ. (Japan) . . . . . . . . . . . . . . . . .  [8679-83]
Development of an atomic hydrogen system
for treatment of EUV mask blanks, Tyler Mowll,
College of Nanoscale Science & Engineering (UnitedStates); Arun J. Kadaksham, Zachary R. Robinson,
SEMATECH North (United States); Sarah Mead,Carl Ventrice, College of Nanoscale Science &Engineering (United States). . . . . . . . . . . .  [8679-84]

Wednesday 27 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The following posters will be on display after 10:00 am on Wednesday. The interactive poster session with authors in attendance will be Wednesday evening from 6:00 to 8:00 pm. All
symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will beavailable for discussion. Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Resist outgassing characterization based on
the resist compositions and process, Norihiko
Sugie, Toshiya Takahashi, Kazuhiro Katayama,
Isamu Takagi, Yukiko Kikuchi, Hiroyuki Tanaka,
Eishi Shiobara, Soichi Inoue, EUVL Infrastructure
Development Ctr., Inc. (Japan). . . . . . . . .  [8679-85]
Zero-CTE controlled TiO2-SiO2 glasses for EUVL,
Jun-ichi Kushibiki, Mototaka Arakawa, Yuji Ohashi,
Yuko Maruyama, Tohoku Univ. (Japan); Naofumi
Yamada, National Institute of Advanced Industrial
Science and Technology (Japan) . . . . . . .  [8679-86]
Enhancements to the electrodeless Z-pinch EUV
source to support first and second-generation
actinic mask inspection tools, Matthew J. Partlow,
Stephen F. Horne, Deborah S. Gustafson, Matthew
M. Besen, Donald K. Smith, Paul Blackborow,
Energetiq Technology, Inc. (United States).[8679-87]
Collector optic in-situ Sn removal usinghydrogen plasma, John Sporre, Dan Elg, Jason
Peck, Tae S. Cho, David N. Ruzic, Univ. of Illinois
at Urbana-Champaign (United States); Shailendra
N. Srivastava, David C. Brandt, Cymer, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-88]
Laser-produced plasma EUV light sources for
EUVL patterning at 20nm node and beyond,David C. Brandt, Igor V. Fomenkov, David W.
Myers, Daniel J. Brown, Bruno La Fontaine, Nigel R.
Farrar, Cymer, Inc. (United States). . . . . .  [8679-89]
High-brightness LPP source for EUVL
applications, Samir S. Ellwi, Adlyte(Switzerland) . . . . . . . . . . . . . . . . . . . . . . .  [8679-90]
Important processes in modeling andoptimization of EUV lithography sources, Tatyana
Sizyuk, Ahmed Hassanein, Purdue Univ. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-91]
Long-term behavior of fuel delivery system for
EUV sources using tin droplets, Luna Bozinova,
Nadia Gambino, Reza S. Abhari, ETH Zurich(Switzerland) . . . . . . . . . . . . . . . . . . . . . . .  [8679-92]
Magnetic mitigation of debris for EUV sources,
Dan Elg, John Sporre, Davide Curreli, David N.
Ruzic, Univ. of Illinois at Urbana-Champaign (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-93]
Enhancing resolution with pupil filtering for
projection printing systems with fixed or
restricted illumination angular distribution,
Gregory R. McIntyre, IBM Corp. (United States);
Obert R. Wood II, GLOBALFOUNDRIES Inc.
(United States); Leon Teeuwen, ASML US, Inc.

(United States); Daniel A. Corliss, IBM Corp. (UnitedStates); Theo van den Akker, ASML Netherlands
B.V. (Netherlands); Erik M. Sohmen, Carl Zeiss AG(Germany); Martin Burkhardt, Karen E. Petrillo, IBM
Corp. (United States). . . . . . . . . . . . . . . . .  [8679-94]

Deep-ultraviolet out-of-band characterizationof EUVL scanners and resists, Gian F. Lorusso,
IMEC (Belgium); Tasaku Matsumiya, Jun Iwashita,
Taku Hirayama, Tokyo Ohka Kogyo Co., Ltd.
(Japan); Eric Hendrickx, IMEC (Belgium). [8679-102]

Roughness and variability in EUV lithography: whois to blame?, part I, Alessandro Vaglio Pret, Roel
Gronheid, IMEC (Belgium); Todd R. Younkin, Intel
Corp. (United States); Gustaf Lars Winroth, IMEC
(Belgium); John J. Biafore, KLA-Tencor Corp. (United
Kingdom); Yusuke Anno, Kenji Hoshiko, JSR Micro
N.V. (Belgium); Vassilios Constantoudis, National Ctr.
for Scientific Research Demokritos (Greece).[8679-95]

Investigation of coat-develop track system for
EUV resist processing, Masahiko Harumoto,
Osamu Tamada, Tadashi Miyagi, Koji Kaneyama,
Akihiko Morita, Charles N. Pieczulewski, Masaya
Asai, SOKUDO Co., Ltd. (Japan). . . . . . .  [8679-104]

Imaging capability and lithographic
characterization on 0.9-sigma SEMATECH Albany
MET, Yu-Jen Fan, Chandra Sarma, SEMATECHNorth (United States); Erik M. Sohmen, Carl Zeiss
AG (Germany); Scott Wright, Mark Neisser, Dominic
Ashworth, SEMATECH North (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-96]
7nm node EUV predictive study of mask LER
transference to CD variance, Deniz Civay, Thomas
I. Wallow, Harry J. Levinson, GLOBALFOUNDRIES
Inc. (United States); Joachim Siebert, Eva Nash,
Ulrich K. Klostermann, Synopsys GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-97]
Silica aerogel can capture flying particles in EUV
tools, Kazuya Ota, Jiro Inoue, Nikon Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-98]
Impact of EUV mask roughness on lithography
performance, Yukiyasu Arisawa, Tsuneo
Terasawa, Hidehiro Watanabe, EUVL Infrastructure
Development Ctr., Inc. (Japan). . . . . . . . .  [8679-99]
Track processing optimizations for different EUV
resist platforms: preparing for a 3300 baseline
process, Philippe Foubert, IMEC (Belgium); Koichi
Matsunaga, Takeshi Shimoaoki, Tokyo Electron
Kyushu Ltd. (Japan); Kathleen Nafus, Tokyo Electron
America, Inc. (United States); Anne-Marie Goethals,
Jan V. Hermans, Eric Hendrickx, IMEC (Belgium);
Hitoshi Kosugi, Tokyo Electron Kyushu Ltd.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-100]
Simulation-assisted layout biasing in EUV
lithography and prediction of an optimum resist
parameter space, Chandra Sarma, SEMATECHNorth (United States); John J. Biafore, KLA-Tencor
Texas (United States); Karen E. Petrillo, Mark
Neisser, SEMATECH North (United States).[8679-101]+1 360 676 3290

Heat behavior of extreme-ultraviolet pellicle
including mesh support, Inseon Kim, Hye-keun
Oh, Ji-won Kim, Eun-jin Kim, Hanyang Univ. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . .  [8679-105]
The need for EUV lithography at advanced
technology for sustainable wafer cost,
Arindam Mallik, Wim Vansumere, IMEC (Belgium);
Abdelkarim Mercha, Naoto Horiguchi, Steven
Demuynck, Juergen Boemmels, Zsolt Tokei, Geert
Vandenberghe, Kurt G. Ronse, Aaron Thean,
Diederik Verkest, Hans Lebon, An Steegen, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . .  [8679-107]
The study of novel PAG containing acidamplifier in EUV resist material, Hyunsang Joo,
JoonHee Han, Korea Kumho Petrochemical Co.,
Ltd. (Korea, Republic of). . . . . . . . . . . . .  [8679-108]
Synthesis of molecular glass photoresists basedon bisphenol A backbone and their application in
EUV photolithography, Guoqiang Yang, Jian Xu, Li
Chen, Shuangqing Wang, Shayu Li, Rui Hu, Instituteof Chemistry (China). . . . . . . . . . . . . . . .  [8679-109]
High-power EUV discharge-produced plasma
source based on liquid tin jet electrodes,
Konstantin Koshelev, Vladimir M. Krivtsun, Oleg
F. Yakushev, Alexander A. Lash, Institute ofSpectroscopy (Russian Federation); Aleksander
Yu. Vinokhodov, Vladimir Mikhailovich Borisov,
Alexander V. Prokofiev, Troitsk Institute forInnovation and Fusion Research (RussianFederation) . . . . . . . . . . . . . . . . . . . . . . .  [8679-110]
Measuring local critical dimension uniformity ofcontact holes: variability and correlation issues,
Vijaya-Kumar Murugesan Kupuswamy, National
Ctr. for Scientific Research Demokritos (Greece)and National Technology Univ. of Athens (Greece);
Vassilios Constantoudis, Evangelos Gogolides,
National Ctr. for Scientific Research Demokritos(Greece); Alessandro Vaglio Pret, Roel Gronheid,
IMEC (Belgium). . . . . . . . . . . . . . . . . . . .  [8679-111]· help@spie.org·#SPIELitho

Molecular glass photoresists based on
9,9’-spirobifluorene derivatives: Synthesis
and application in EUV photolithography, Yi Li,
Qingshan Hao, Jinping Chen, Tianjun Yu, TechnicalInstitute of Physics and Chemistry(China). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-112]
XPS optimization for characterization of
trace contamination elements for EUV resist
outgassing study, Mihir Upadhyaya, College of
Nanoscale Science & Engineering, Univ. of Albany(United States); Yudhishthir P. Kandel, Collegeof Nanoscale Science and Engineering, Univ. at
Albany (United States); Gregory Denbeaux, Collegeof Nanoscale Science & Engineering, Univ. of
Albany (United States); Cecilia Montgomery, Yu-Jen
Fan, SEMATECH North (United States) .  [8679-113]
Particle detection of sub-20nm particles inlow pressure conditions for applications in thesemiconductor industry, Yashdeep Khopkar,
College of NanoScale Science & Engineering, Univ.
at Albany (United States); Spencer Natman, Collegeof NanoScale Science & Engineering, Univ. of
Albany (United States); Vibhu Jindal, SEMATECHNorth (United States); Gregory Denbeaux, Collegeof Nanoscale Science & Engineering, Univ. of
Albany (United States). . . . . . . . . . . . . . .  [8679-114]
Comparison of O2-N2 and H2 plasma cleaning
for EUV applications, E. Kosmowska, David F.
Varley, Ronald Vane, Cameron Moor, XEI Scientific,
Inc. (USA). . . . . . . . . . . . . . . . . . . . . . . . .  [8679-115]

Conf. 8680 Alternative
Lithographic Technologies V
Directed Self-Assembly
Dissipative particle dynamics study on directed
self-assembly in holes, Takeo Nakano, Masaaki
Matsukuma, Kazuyoshi Matsuzaki, Tokyo Electron
AT Ltd. (Japan); Makoto Muramatsu, Tadatoshi
Tomita, Takahiro Kitano, Tokyo Electron Kyushu
Ltd. (Japan). . . . . . . . . . . . . . . . . . . . . . . .  [8680-38]
Dissipative particle dynamics simulations to
optimize contact hole shrink process usinggraphoepitaxial directed self assembly, Hironobu
Sato, Hiroki Yonemitsu, Yuriko Seino, Toshiba Corp.
(Japan); Hirokazu Kato, Toshiba America Electronic
Components, Inc. (Japan); Masahiro Kanno,
Toshiba Corp. (Japan); Katsutoshi Kobayashi,
Toshiba Materials Co., Ltd. (Japan); Ayako
Kawanishi, Toshiba Corp. (Japan); Katsuyoshi
Kodera, Toshiba Materials Co., Ltd. (Japan);
Tsukasa Azuma, Toshiba Corp. (Japan). .  [8680-55]

45

Wednesday 27 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The following posters will be on display after 10:00 am on Wednesday. The interactive poster session with authors in attendance will be Wednesday evening from 6:00 to 8:00 pm. All
symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will beavailable for discussion. Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

Computational simulation of block copolymer
directed self-assembly in small topographicalguiding templates, He Yi, Stanford Univ. (UnitedStates); Azat M. Latypov, GLOBALFOUNDRIES Inc.
(United States); H. S. Philip Wong, Stanford Univ.
(United States). . . . . . . . . . . . . . . . . . . . . .  [8680-57]
High-Χ block co-polymer for directed self
assembly, Yuji Namie, Shin-ya Minegishi, Tomoki
Nagai, Yoshikazu Yamaguchi, JSR Engineering
Co., Ltd. (Japan); Yuusuke Anno, JSR Micro, N.V.
(Belgium); Takehiko Naruoka, Yoshi Hishiro, JSR
Micro, Inc. (United States). . . . . . . . . . . . .  [8680-58]
Self-assembled lithography and potential
applications to electronic devices, Koji Asakawa,Atsushi Hieno, Shigeki Hattori, Hiroko Nakamura,
Tsutomu Nakanishi, Ryota Kitagawa, Akira Fujimoto,Toshiba Corp. (Japan). . . . . . . . . . . . . . . .  [8680-59]
Graphoepitaxial directed self-assembly of PS-bPDMS block copolymers on nanopatterned silicon
nitride substrates, Dipu Borah, Barbara Kosmala,
Sozaraj Rasappa, Ramsankar Senthamaraikannan,
Univ. College Cork (Ireland); Matthew T. Shaw, Intel
Ireland Ltd. (Ireland); Justin D. Holmes, Michael A.
Morris, Univ. College Cork (Ireland) . . . . .  [8680-60]
How do modulations in surface energy of hardmask enabling materials correlate with direct
self-assembly (DSA) effectiveness?, Mary Ann J.
Hockey, Yubao Wang, Brewer Science, Inc. (UnitedStates); Douglas Guerrero, Brewer Science, Inc.
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-61]
DSA patterning for the resolution of 1x nm, Daiju
Shiono, Tsuyoshi Kurosawa, Kenichiro Miyashita,
Tasuku Matsumiya, Ken Miyagi, Katsumi Ohmori,Tokyo Ohka Kogyo Co., Ltd. (Japan) . . . .  [8680-62]
Variations in chemoepitaxial templates andtheir effects on equilibrium block copolymer
microdomain shapes, Paul N. Patrone, Univ. of
Maryland, College Park (United States) and National
Institute of Standards and Technology (UnitedStates); Gregg M. Gallatin, National Institute ofStandards and Technology (United States).[8680-63]
Using process monitor wafers to understanddirected self-assembly defects, YoungJun Her, AZ
Electronic Materials USA Corp. (United States); Yukio
Hashimoto, Nihon Entegris K. K. (Japan); Yi Cao,AZ Electronic Materials USA Corp. (United States);Paulina A. Rincon Delgadillo, Univ. of Chicago(United States); Roel Gronheid, IMEC (Belgium);
Ainhoa Romo-Negreira, Mark H. Somervell, Kathleen
Nafus, Tokyo Electron America, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-64]

46Partial patterning of periodic nanostructuresusing block copolymer lithography, Hiroyuki
Suzuki, Reo Kometani, Sunao Ishihara, Shin’ichi
Warisawa, The Univ. of Tokyo (Japan) . . .  [8680-65]
Orientation and position-controlled block
copolymer nanolithography for bit-patterned
media, Ryousuke Yamamoto, Masahiro Kanamaru,
Katsuya Sugawara, Yasuaki Ootera, Takeshi Okino,
Hiroyuki Hieda, Norikatsu Sasao, Naoko Kihara,
Yoshiyuki Kamata, Akira Kikitsu, Toshiba Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-66]
PS-b-PAA as a high χ polymer for directed
self-assembly: A study of solvent and thermal
annealing processes for PS-b-PAA, Richard A.
Lawson, Jing Cheng, Wei-Ming Yeh, Nathan D.
Jarnagin, Laren M. Tolbert, Clifford L. Henderson,
Georgia Institute of Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-93]
PS-b-PHEMA: synthesis, characterization, andprocessing of a potential new high χ polymer
for directed self-assembly lithography, Jing
Cheng, Richard A. Lawson, Wei-Ming Yeh, Nathan
D. Jarnagin, Laren M. Tolbert, Clifford L. Henderson,
Georgia Institute of Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-94]
PS-b-PHOST as a high χ block copolymer for
directed self-assembly: Properties, DSA, andnovel methods for selective bock removal, Nathan
D. Jarnagin, Wei-Ming Yeh, Jing Cheng, Andrew
Peters, Richard A. Lawson, Laren M. Tolbert, Clifford
L. Henderson, Georgia Institute of Technology(United States)  . . . . . . . . . . . . . . . . . . . . .  [8680-95]
Coarse grained molecular dynamics model ofblock copolymer directed self-assembly, Richard
A. Lawson, Andrew Peters, Peter Ludovice, Clifford
L. Henderson, Georgia Institute of Technology(United States) . . . . . . . . . . . . . . . . . . . . .  [8680-96]
Tuning the domain size of block copolymers for
directed self-assembly using polymer blending:molecular dynamics simulation studies, Richard A.
Lawson, Andrew Peters, Peter Ludovice, Clifford L.
Henderson, Georgia Institute of Technology (UnitedStates) . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-97]
Effects of block copolymer polydispersity andχN on pattern line edge roughness and line widthroughness from directed self-assembly of diblock
copolymers, Andrew Peters, Richard A. Lawson,
Peter Ludovice, Clifford L. Henderson, Georgia
Institute of Technology (United States) . .  [8680-98]

Direct-Write/Maskless Lithography
Alignment strategy for mixed e-beam and opticallithography, Paul J. Duval, Kamal Tabatabaie-Alavi,
Dale M. Shaw, Alan R. St. Germain, Raytheon Co.
(United States). . . . . . . . . . . . . . . . . . . . . .  [8680-67]
Block co-polymer multiple patterning directed
self-assembly on PS-OH brush layer and AFM
based nanolithography, Francesc X. PerezMurano, Ctr. Nacional de Microelectrónica
(Spain). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-69]
Image contrast of line-cut/contact features incomplementary e-beam lithography, Enden D.
Liu, David K. Lam, Multibeam Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-70]
Direct-write maskless lithography using
patterned oxidation of Si-substrate induced byfemtosecond laser pulses, Amirkianoosh Kiani,
Krishnan Venkatakrishnan, Bo Tan, Ryerson Univ.
(Canada) . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-71]
A slim column cell of 12nm resolution for wider
application of e-beam lithography, Akio Yamada,Hitoshi Tanaka, Yoshihisa Oae, Tomohiko Abe,
Youichi Shimizu, Advantest Corp. (Japan).[8680-72]
Practical study on the electron-beam-onlyalignment strategy for the electron-beam directwriting technology, Yoshinori Kojima, Yasushi
Takahashi, Shuzo Ohshio, Shinji Sugatani, e-Shuttle
Inc. (Japan); Jun-ichi Kon, Fujitsu Labs., Ltd.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-73]
Practical proof of CP element-based designfor 14nm node and beyond, Takashi Maruyama,e-Shuttle, Inc. (Japan); Hiroshi Takita, Hiromi
Hoshino, Morimi Osawa, Fujitsu Semiconductor Ltd.
(Japan); Shinji Sugatani, e-Shuttle, Inc.
(Japan); Yoshinori Kojima, e-Shuttle Inc. (Japan);
Masaru Ito, Toshio Hino, Fujitsu Semiconductor
Ltd. (Japan); Rimon Ikeno, Univ. of Tokyo (Japan);
Tetsuya Iizuka, Satoshi Komatsu, Makoto Ikeda,
Kunihiro Asada, The Univ. of Tokyo(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-75]
Reticle level compensation for long-range
process effect, Thiago R. Figueiro, Aselta
Nanographics (France) and CNRS CEA LTM(France); Clyde H. Browning, Patrick Schiavone,
Aselta Nanographics (France). . . . . . . . . .  [8680-76]
Investigation of shot noise, dose, and focus
latitude for e-beam direct write, Regina Freed,Thomas Gubiotti, Shinichi Kojima, Chris F. Bevis,
Alan D. Brodie, KLA-Tencor Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-77]

SPIE Advanced Lithography 2013·www.spie.org/al

Contrast enhanced exposure strategy inmultibeam mask writing, Nikola Belic, Uli
Hofmann, GenISys GmbH (Germany); Jan Klikovits,
IMS Nanofabrication AG (Austria). . . . . . .  [8680-78]

Nanoimprint Lithography
Sub-22nm silicon template nanofabrication byadvanced spacer patterning technique for NIL
applications, Jong-Moon Park, Kun-Sik Park,
Seong-Ook Yoo, Jin-Ho Lee, Electronics andTelecommunications Research Institute (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . .  [8680-79]
Low-angle deposition as a low-cost
nanofabrication process for wire grid polarizers,
Mike P. Watts, Impattern Solutions (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-80]

Other Lithographic Approaches
Resist development for 2nm quantum opticallithography, Eugen Pavel, Storex Technologies Inc.
(Romania) . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-81]
Effective process enhancements for negativetone development (NTD) method, Go Noya, AZElectronic Materials (Japan) K.K. (Japan).  [8680-82]
Direct electron-beam patterning of sub-10nm
graphene interconnects, Zhengqing J. Qi, Julio
Rodriguez-Manzo, Univ. of Pennsylvania (UnitedStates); Sung Ju Hong, Seoul National Univ. (Korea,
Republic of); Eric A. Stach, Brookhaven National
Lab. (United States); Mirija Drndi?, A.T. Charlie
Johnson, Univ. of Pennsylvania (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-83]

Conf. 8683 Optical
Microlithography XXVI
Compatibility of optimized source over designchanges in foundry environment, Aasutosh Dave,
Mentor Graphics Corp. (United States); Jojo Pei,
Semiconductor Manufacturing International Corp.
(China); Cynthia Zhu, Feng Shao, Mentor Graphics
Corp. (United States); Verne Xu, Semiconductor
Manufacturing International Corp. (China); Omar
Elsewefy, Mentor Graphics Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-56]

Wednesday 27 February — Poster Sessions — 6:00 to 8:00 pm — Convention Center Hall 2
The following posters will be on display after 10:00 am on Wednesday. The interactive poster session with authors in attendance will be Wednesday evening from 6:00 to 8:00 pm. All
symposium attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster author who will beavailable for discussion. Enjoy light refreshments while networking with colleagues in your field. Attendees are required to wear their conference registration badges to the poster sessions.

3D resist-loss full-chip verification and hot-spots
disposition, Ellyn Yang, Shyue-Fong Quek, Yee Mei
Foong, Dong Qing Zhang, GLOBALFOUNDRIESSingapore (Singapore); Jens Hassmann, Andre
Leschok, GLOBALFOUNDRIES Dresden Module
Two, GmbH & Co. KG (Germany); Yun Tang,
GLOBALFOUNDRIES Singapore(Singapore) . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-57]
Development of a 75W XLR solution for increased
depth of focus, Brian King, Rui Jiang, Cymer, Inc.
(United States) and DUV Products (United States);
Rostislav I. Rokitski, Cymer, Inc. (United States);
Dan Wilson, Cymer, Inc. (United States) and DUVProducts (United States); Gunasira G. Padmadbndu,
Marcus Osibov, Will Conley, Cymer, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-58]
3D lithography for implant applications, Jens
Schneider, Henning Feick, Dieter Kaiser, Marcel
Heller, Matthias Schmeide, Daniel Sarlette, Infineon
Technologies Dresden (Germany) . . . . . . . . [8683-59]
Lens heating impact analysis and controls forcritical device layers by computational method,
Du Hyun Beak, Jin-Phil Choi, Tony Park, Young
Sun Nam, Youngseog Kang, Chan Hoon Park,SAMSUNG Electronics Co., Ltd. (Korea, Republic of);
Ki-Yeop Park, Chang-Hoon Ryu, Wenjin Huwang,
Ki-Ho Baik, ASML Korea Co., Ltd. (Korea, Republicof) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-60]
Effects of nested and isolated features focus
difference for scanner proximity matching,
GuoXiang Ning, GLOBALFOUNDRIES Dresden
Module Two, GmbH & Co. KG (United States); Paul
W. Ackmann, Huipeng Koh, GLOBALFOUNDRIES
Inc. (United States); Frank Richter, Matthias
Ruhm, GLOBALFOUNDRIES Dresden Module
Two, GmbH & Co. KG (Germany); Weilong Wong,
GLOBALFOUNDRIES Inc. (United States); Jens
Busch, GLOBALFOUNDRIES Dresden Module
Two, GmbH & Co. KG (Germany); Norman
Chen, GLOBALFOUNDRIES Inc. (United States);
Karin Kurth, Andre Leschok, Chin-Teong Lim,
GLOBALFOUNDRIES Dresden Module Two, GmbH& Co. KG (Germany). . . . . . . . . . . . . . . . . . . [8683-61]
Implementation of focus drilling on a 60W XLR
system, Will Conley, Brian King, Rui Jiang, Slava
Rokitski, Dan Wilson, Gunasiri G. Padmabandu,
Marcus Osibov, Ronnie P. Flores, Robert Rosal,
Theodore Cacouris, Eric R. Gross, Cymer, Inc.
(United States); Gerald Litchenberg, Cymer
B.V. (Netherlands); Emile Merkus, Cymer B.V.
(Netherlands) and Cymer Inc. (United States);
Marijn van Berkel, Martine De Haan, Cymer B.V.
(Netherlands); Carol Jackson, Cymer, Inc. (UnitedStates) and Cymer Inc. (United States). . .  [8683-62]

Source mask optimization using real-coded
genetic algorithms, Chaoxing Yang, Xiangzhao
Wang, Sikun Li, Shanghai Institute of Optics
and Fine Mechanics (China); Andreas Erdmann,
Fraunhofer-Institut für Integrierte System und
Bauelementetechnologie (Germany). . . . .  [8683-63]
Effective method of source mask optimization
flow incorporating mask 3D model, Hak-Yong
Sim, SK Hynix, Inc. (Korea, Republic of). .  [8683-64]
Mask 3D effects on contact layouts of 1Xnm
NAND flash devices, Jongwon Jang, Hynix
Semiconductor Inc. (Korea, Republic of) .  [8683-65]
High-speed and flexible PEB 3D diffusion
simulation based on Sylvester equation, PeiChun Lin, Chung-Ping Chen, National Taiwan Univ.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-66]
Application for resist profile-enhanced modeland reOPC, Oseo Park, Jian Liu, Chidam Kallingal,
GLOBALFOUNDRIES Inc. (United States). [8683-67]
Line-edge roughness (LER) mitigation studies
specific to interference-like lithography, Burak
Baylav, Rochester Institute of Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-68]
The studies of SMO process on contact layerof 20nm node, Wei-Cyuan Lo, Yung-Feng Cheng,
Ming-Jui Chen, United Microelectronics Corp.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-69]
Lens heating effect and its compensationfor 20nm logic product, Bumhwan Jeon,
GLOBALFOUNDRIES Inc. (United States). [8683-70]
High-power XLR system for enhanced processcapability, Gunasiri G. Padmabandu, Will Conley,
Rui Jiang, Brian King, Marcus Osibov, Ronnie P.
Flores, Robert Rosal, Theodore Cacouris, Eric R.
Gross, Cymer, Inc. (United States). . . . . .  [8683-71]
SMO and NTD for robust single-exposure
solution on contact patterning for 40nm node
flash memory devices, Chih-Chieh Yu, ChinCheng Yang, Elvis Yang, Ta-Hung Yang, KuangChao Chen, Chih-Yuan Lu, Macronix International
Co., Ltd. (Taiwan) . . . . . . . . . . . . . . . . . . .  [8683-72]
Multiple-step process window aware OPC for
hyper-NA lithography, Chung-Te Hsuan, Cheming
Hu, Fred Lo, Elvis Yang, Ta-Hung Yang, KuangChao Chen, Chih-Yuan Lu, Macronix International
Co., Ltd. (Taiwan) . . . . . . . . . . . . . . . . . . .  [8683-73]+1 360 676 3290

Studies of suitable mask enhanced error factor
for 2D patterns, Chih-I Wei, Yung-Feng Cheng,
Ming-Jui Chen, United Microelectronics Corp.
(Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-74]

Wavefront testing of pinhole based on point
diffraction interferometer, Xin Jia, Tingwen Xing,
Jiajun Xu, Wumei Lin, Zhijie Liao, Institute of Optics
and Electronics (China). . . . . . . . . . . . . . .  [8683-86]

Pixel-based inverse lithography using a mask
filtering technique, Wen Lv, Qi Xia, Shiyuan Liu,
Huazhong Univ. of Science and Technology(China). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-75]

Design and simulation of illuminator withmicroscanning slit array for NA 0.75 lithographysystem, Linglin Zhu, Aijun Zeng, Shanhua Zhang,Ruifang Fang, Huijie Huang, Shanghai Institute of
Optics and Fine Mechanics (China). . . . . . [8683-87]

Intensity quality full-chip verification foryield improvement, Ellyn Yang, Shyue-Fong
Quek, Mark Lu, Yee Mei Foong, CongShu Zhou,
GLOBALFOUNDRIES Singapore(Singapore) . . . . . . . . . . . . . . . . . . . . . . . .  [8683-76]

Zero expansion glass ceramic ZERODUR®
roadmap for advanced lithography, ThomasWesterhoff, Tanja Bizjak, Peter Hartmann, Ralf
Jedamzik, SCHOTT AG (Germany). . . . . .  [8683-88]

Hybrid OPC technique using rule-based andmodel-based flows, Mohammed Harb, Hesham M.
Abdelghany, Mentor Graphics Egypt(Egypt). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-77]

Mask sidewall clamping, Geert-Jan Naaijkens,
Nick Rosielle, Maarten Steinbuch, Technische Univ.
Eindhoven (Netherlands). . . . . . . . . . . . . .  [8683-89]

High-precision beam shaping in lithography andsemiconductor applications, Ansgar Teipel, LIMO
Lissotschenko Mikrooptik GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-79]

Conf. 8684 Design for
Manufacturability through
Design-Process

Model of freeform illumination mode andpolarization mode for 193nm immersion
lithography, Yunbo Zhang, Aijun Zeng, Qiao Yuan,
Ying Wang, Huijie Huang, Shanghai Institute of
Optics and Fine Mechanics (China). . . . . . [8683-80]
Analytical equation of image intensity thatpredicts the forbidden patten pitch, Masato
Shibuya, Tokyo Polytechnic Univ. (Japan); Junichi
Tamaki, Tokyo Polytechnic Univ. (Japan) and Orc
Manufacturing Co., Ltd. (Japan). . . . . . . .  [8683-81]

A novel methodology for building robust design
rules by using design-based metrology (DBM),
Myeongdong Lee, Sungkyunkwan Univ. (Korea,
Republic of) and SAMSUNG Electronics Co., Ltd.
(Korea, Republic of); Seiryung Choi, Jinwoo Choi,
Jeahyun Kim, Hyunju Sung, Hyunyoung Yeo,
Myoungseob Shim, Gyoyoung Jin, Chilhee Chung,
SAMSUNG Electronics Co., Ltd. (Korea, Republicof); Yonghan Roh, Sungkyunkwan Univ. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . . .  [8684-5]

Integrated analysis of optical system with nonuniform supporting loads in assembly, Yiping
Shen, Huazhong Univ. of Science and Technology(China). . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8683-82]
Optomechanical characterization of large wafer
stepper-optics with respect to centering errors,lens distances, and center thicknesses, Daniel
Stickler, TRIOPTICS GmbH (Germany). . .  [8683-83]
A customized Exicor system for measuringresidual birefringence in lithographic lenses,
Andy Breninger, Baoliang Wang, Hinds Instruments,
Inc. (United States) . . . . . . . . . . . . . . . . . .  [8683-84]
Flare management for 40nm logic devices,
Yuusuke Tanaka, Takao Tamura, Masashi Fujimoto,
Kyoichi Tsubata, Naka Onoda, Renesas Electronics
Corp. (Japan); Kiyoshi Fujii, Semiconductor Leading
Edge Technologies Inc (Japan). . . . . . . . .  [8683-85]· help@spie.org·#SPIELitho

47

Thursday 28 February

Conference 8679

Conference 8680

Conference 8681

Extreme Ultraviolet (EUV)
Lithography IV

Alternative Lithographic
Technologies V

Metrology, Inspection, and Process
Control for Microlithography XXVII

Session 11
Room: Conv. Ctr. 210 B
Thu 8:30 am to 12:00 pm

Session 10
Room: Conv. Ctr. Hall 3
Thu 8:00 am to 10:10 am

Session 12
Room: Conv. Ctr. 230 B
Thu 8:00 am to 9:50 am

Invited II

DSA Vias

SEM, AFM, SPM

Session Chairs: Daniel A. Corliss, IBM Corp. (United States);
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of)Session Chairs: James Watkins, Univ. of Massachusetts
Amherst (United States); Benjamen M. Rathsack, Tokyo
Electron America, Inc. (United States)

Session Chairs: Matthew J. Sendelbach, Nova Measuring
Instruments Inc. (United States); Vladimir A. Ukraintsev,
Nanometrology International, Inc. (United States)

8:30 am: ASML’s NXE platform performance and volume
introduction (Invited Paper), Rudy Peeters, Sjoerd Lok, Erwin V.
Alphen, Noreen Harned, Henk Meijer, David Ockwell, Eelco van
Setten, Judon Stoeldraijer, Robert Kazinczi, Richard Droste, Hans
Meiling, Ron Kool, ASML Netherlands B.V. (Netherlands); Peter
Kuerz, Martin Lowisch, Carl Zeiss SMT GmbH (Germany); JanWillem van der Horst, ASML Netherlands B.V.
(Netherlands). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-50]

8:00 am: Patterning process for semiconductor using directed
self assembly (Invited Paper), Jaewoo Nam, Eun Sung Kim,
Daekeun Kang, Hangeun Yu, Kyoungseon Kim, Shiyong Yi, ChulHo Shin, Ho-Kyu Kang, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-36]

8:00 am: CD-SAXS for 3D dimensional metrology on 32nm-pitch
line patterns (Invited Paper), R. Joseph Kline, Daniel F. Sunday,
Wen-li Wu, National Institute of Standards and Technology (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-44]

9:00 am: CO2/Sn LPP EUV sources for device development andHVM (Invited Paper), David C. Brandt, Igor V. Fomenkov, David W.
Myers, Daniel J. Brown, Bruno La Fontaine, Nigel R. Farrar, Cymer,
Inc. (United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-51]
9:30 am: Optics for ASML’s NXE:3300 platform (Invited Paper),Martin Lowisch, Peter Kuerz, Olaf Conradi, Winfried M. Kaiser,
Wolfgang Seitz, Gero Wittich, Carl Zeiss SMT GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-52]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . Thu 10:00 am to 10:30 am
10:30 am: Through-focus EUV multilayer defect repair withnanomachining (Invited Paper), Gregory R. McIntyre, IBM
Microelectronics (United States); Emily E. Gallagher, Mark Lawliss,
IBM Corp. (United States); Tod E. Robinson, Jeff LeClaire, Ron R.
Bozak, Roy L. White, RAVE LLC (United States) . . . . . . .  [8679-53]
11:00 am: Patterning challenges of EUV lithography for 1x-nm
node DRAM and beyond (Invited Paper), Tae-Seung Eom, Hong-Ik
Kim, Choon-Ky Kang, Yoon-Jung Ryu, Seung-Hyun Hwang, HoHyuk Lee, Hee-Youl Lim, Jeong-Su Park, Noh-Jung Kwak, Hyosang
Kang, SK Hynix, Inc. (Korea, Republic of). . . . . . . . . . . . .  [8679-54]
11:30 am: Toward manufacturing a 14nm node device withcomplementary EUV lithography (Invited Paper), Jan V. Hermans,
David Laidler, Philippe J. Leray, IMEC (Belgium); Huixiong Dai,
Applied Materials, Inc. (United States); Shaunee Y. Cheng, IMEC
(Belgium). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8679-55]
Conference End.

8:30 am: Potential of block copolymer’s directed self-assemblyfor contact hole shrink and contact multiplication, Raluca Tiron,
Ahmed Gharbi, CEA-LETI-Minatec (France); Maxime Argoud,
CEA-LETI (France); Xavier Chevalier, CEA-LETI-Minatec (France);
Jérôme Belledent, CEA-LETI (France); Jonathan Pradelles, CEALETI-Minatec (France); Patricia Pimenta Barros, CEA-LETI (France);
Christophe Navarro, Arkema S.A. (France); Michael Delalande, Lab.
des Technologies de la Microélectronique (France); Gilles Cunge,
LTM CNRS (France); Johann Foucher, CEA-LETI-Minatec (France);
Guillaume Fleury, Georges Hadziioannou, Univ. Bordeaux 1 (France);
Sebastien Barnola, Laurent Pain, CEA-LETI (France) . . . . .  [8680-37]
8:50 am: Exploration of the directed self-assemblybased nanofabrication design space using computational
simulations, Azat M. Latypov, Gerard M. Schmid, Ji Xu, He
Yi, GLOBALFOUNDRIES Inc. (United States); Kenji Yoshimoto,
GLOBALFOUNDRIES Inc. (United States) and Kyoto Univ.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  [8680-56]
9:10 am: The hole shrink problem: theoretical studies of directed
self-assembly in cylindrical confinement, Nabil Laachi, Kris T.
Delaney, Bongkeun Kim, Univ. of California, Santa Barbara (UnitedStates); Robert Bristol, Corey J Weinheimer, David Shykind, Intel
Corp. (United States); Glenn H. Fredrickson, Univ. of California, Santa
Barbara (United States). . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-39]
9:30 am: Novel process variation model for graphoepitaxial
directed self-assembly lithography based on the dissipative
particle dynamics method, Katsuyoshi Kodera, Toshiba Corp.
(Japan); Shimon Maeda, Satoshi Tanaka, Shoji Mimotogi, ToshibaMaterials Co., Ltd. (Japan); Hironobu Sato, Tsukasa Azuma, Toshiba
Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-40]
9:50 am: Defectivity study of directed self-assembly of cylindricaldiblock copolymers in laterally confined thin channels,
Bongkeun Kim, Nabil Laachi, Materials Research Lab. (UnitedStates); Glenn H. Fredrickson, Mitsubishi Chemical Ctr. for
Advanced Materials (United States) . . . . . . . . . . . . . . . . . . [8680-41]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . Thu 10:10 am to 10:40 am

48

SPIE Advanced Lithography 2013·www.spie.org/al

8:30 am: Precise morphology imaging of the photoresist inwater, Hiroshi Itoh, Tadahiro Odaka, Chunmei Wang, National
Institute of Advanced Industrial Science and Technology(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-45]
8:50 am: 3D AFM method for characterization of resistmultilayer roughness and side-wall morphology of lithographic
patterns: effect of aerial image contrast and processes, YongHa
Paul Lee, Park Systems Corp. (Korea, Republic of). . . . . . [8681-46]
9:10 am: Three-dimensional profile extraction and top/bottom
CD monitoring with CD-SEM by line-edge roughness analysis,
Atsuko Yamaguchi, Takeyoshi Ohashi, Hitachi, Ltd. (Japan);
Takahiro Kawasaki, Osamu Inoue, Hiroki Kawada, Hitachi HighTechnologies Corp. (Japan) . . . . . . . . . . . . . . . . . . . . . . . . [8681-47]
9:30 am: Buckling characterization of gate all around silicon
nanowires, Shimon Levi, Applied Materials (Israel). . . . . . [8681-48]
9:50 am: Characterization of a first measurement effect in CDSEM repeating measurements, Boxiu S. Cai, Siyuan F. Yang, Yi
Shih A. Lin, Yi Huang, Wendy Li, Semiconductor Manufacturing
International Corp. (China). . . . . . . . . . . . . . . . . . . . . . . . . [8681-68]
Coffee Break. . . . . . . . . . . . . . . . . . . . . . Thu 10:10 am to 10:30 am

Thursday 28 February

SPIE
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Conference 8683

Conference 8684

Optical Microlithography XXVIDesign for Manufacturability through
Design-Process

Session 9
Room: Conv. Ctr. 210 C
Thu 8:00 am to 10:00 am

Session 5
Room: Conv. Ctr. 210 C
Thu 8:00 am to 10:00 am

Optical and DFM I: Joint Session with
Conferences 8683 and 8684

Optical and DFM I: Joint Session with
Conferences 8683 and 8684

Session Chairs: Mark E. Mason, Texas Instruments Inc.
(United States); Will Conley, Cymer, Inc. (United States)

Session Chairs: Mark E. Mason, Texas Instruments Inc.
(United States); Will Conley, Cymer, Inc. (United States)

8:00 am: Interference harmonics and rigorous EM spectrum
analysis method for low-k1 CD Bossung tilt correction, ShuoYen Chou, Hoi-Tou Ng, Yi-Yin Chen, Chien-Fu Lee, Ru-Gun Liu,
Tsai-Sheng Gau, Burn J. Lin, Taiwan Semiconductor Manufacturing
Co. Ltd. (Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-40]

8:00 am: Interference harmonics and rigorous EM spectrum
analysis method for low-k1 CD Bossung tilt correction, ShuoYen Chou, Hoi-Tou Ng, Yi-Yin Chen, Chien-Fu Lee, Ru-Gun Liu,
Tsai-Sheng Gau, Burn J. Lin, Taiwan Semiconductor Manufacturing
Co. Ltd. (Taiwan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-40]

8:20 am: Improved SADP decomposition for SID process withmodel-based verification, Yuelin Du, Univ. of Illinois at UrbanaChampaign (United States) and Synopsys, Inc. (United States); HuaSong, James P. Shiely, Synopsys, Inc. (United States); Martin D. F.
Wong, Univ. of Illinois at Urbana-Champaign (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-13]

8:20 am: Improved SADP decomposition for SID process withmodel-based verification, Yuelin Du, Univ. of Illinois at UrbanaChampaign (United States) and Synopsys, Inc. (United States); HuaSong, James P. Shiely, Synopsys, Inc. (United States); Martin D. F.
Wong, Univ. of Illinois at Urbana-Champaign (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-13]

8:40 am: Model-based stitching and inter-mask bridge
prevention for double-patterning lithography (DPL), GuillaumeLandie, STMicroelectronics (France). . . . . . . . . . . . . . . . . . [8683-41]

8:40 am: Model-based stitching and inter-mask bridge
prevention for double-patterning lithography (DPL), GuillaumeLandie, STMicroelectronics (France). . . . . . . . . . . . . . . . . . [8683-41]

9:00 am: Mask strategy and layout decomposition for selfaligned quadruple patterning, Weiling Kang, Peking Univ.
Shenzhen Graduate School (China); Chen Feng, Univ. of Michigan(United States); Yijian Chen, Peking Univ. Shenzhen Graduate
School (China). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-14]

9:00 am: Mask strategy and layout decomposition for selfaligned quadruple patterning, Weiling Kang, Peking Univ.
Shenzhen Graduate School (China); Chen Feng, Univ. of Michigan(United States); Yijian Chen, Peking Univ. Shenzhen Graduate
School (China). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-14]

9:20 am: Application of artificial neural networks to compact
mask models in optical lithography simulation, Viviana Agudelo,
Tim Fühner, Andreas Erdmann, Peter Evanschitzky, FraunhoferInstitut für Integrierte System und Bauelementetechnologie(Germany) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-42]

9:20 am: Application of artificial neural networks to compact
mask models in optical lithography simulation, Viviana Agudelo,
Tim Fühner, Andreas Erdmann, Peter Evanschitzky, FraunhoferInstitut für Integrierte System und Bauelementetechnologie(Germany) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-42]

9:40 am: Process characteristics and layout decomposition ofself-aligned sextuple patterning: the end of spatial frequency
multiplication?, Weiling Kang, Yijian Chen, Peking Univ. Shenzhen
Graduate School (China). . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-15]

9:40 am: Process characteristics and layout decomposition ofself-aligned sextuple patterning: the end of spatial frequency
multiplication?, Weiling Kang, Yijian Chen, Peking Univ. Shenzhen
Graduate School (China). . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-15]

Coffee Break. . . . . . . . . . . . . . . . . . . . . .  Thu 10:00 am to 10:30 am

Coffee Break. . . . . . . . . . . . . . . . . . . . . .  Thu 10:00 am to 10:30 am

www.spie.org/CareerCenter+1 360 676 3290

· help@spie.org·#SPIELitho49

Thursday 28 February

Conference 8680

Conference 8681

Alternative
Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 11
Room: Conv. Ctr. Hall 3
Thu 10:40 am to 11:50 am

Session 12
Room: Conv. Ctr. Hall 3
Thu 1:20 pm to 3:10 pm

Nanoprobe Array Direct-Write
Technologies

E-Beam Direct-Write for HighVolume Manufacturing III

Session Chairs: Ivo W. Rangelow,
Technische Univ. Ilmenau (Germany); FrankM. Schellenberg, Consultant (United States)

Session Chairs: Ines A. Stolberg, Vistec
Electron Beam Lithography Group (Germany);
Marco Wieland, MAPPER Lithography(Netherlands)

10:40 am: Scanning probe lithography approachfor beyond CMOS devices (Invited Paper),Zahid Durrani, Imperial College London (United
Kingdom); Marcus Kaestner, Manuel Hofer, Elshad
Guliyev, Ahmad Ahmad, Tzvetan Ivanov, Ivo W.
Rangelow, Technische Univ. Ilmenau(Germany) . . . . . . . . . . . . . . . . . . . . . . . . [8680-42]
11:10 am: 0.1-nanometer resolution positioning
stage for sub-10nm scanning probe
lithography, Eberhard Manske, Ivo W. Rangelow,
Nataliya Vorbringer-Dorozhovets, Felix G. Balzer,
Marcus Kaestner, Manuel Hofer, Elshad Guliyev,
Ahmad Ahmad, Tzvetan Ivanov, Technische Univ.
Ilmenau (Germany) . . . . . . . . . . . . . . . . . [8680-44]
11:30 am: Mix and match electron-beam andscanning probe lithography for high-throughput
sub-10nm lithography, Marcus Kaestner, ManuelHofer, Ivo W. Rangelow, Technische Univ. Ilmenau(Germany) . . . . . . . . . . . . . . . . . . . . . . . . [8680-45]
Lunch Break . . . . . . . . .  Thu 11:50 am to 1:20 pm

1:20 pm: Influence of high-energy electron
irradiation on ultra-low-k characteristics andtransistor performance (Invited Paper), Katja
Steidel, Fraunhofer-Ctr. Nanoelektronische
Technologien (Germany); Thomas Werner,
GLOBALFOUNDRIES Inc. (Germany); Martin Freitag,
Manuela S. Gutsch, Kang-Hoon Choi, Christoph
K. Hohle, Fraunhofer-Ctr. Nanoelektronische
Technologien (Germany); Robert Seidel,
GLOBALFOUNDRIES Dresden Module Two, GmbH &Co. KG (Germany). . . . . . . . . . . . . . . . . . . . [8680-46]
1:50 pm: A dose modification strategy of electronbeam direct-writing considering TDDB reliability
in LSI interconnects, Yoshihiro Midoh, Atsushi
Osaki, Koji Nakamae, Osaka Univ. (Japan). [8680-47]
2:10 pm: Influence of data volume and e-beamproximity correction on process window in
multiple e-beam direct-write lithography, Shy-Jay
Lin, Pei-Yi Liu, Jen-Hom Chen, Wen-Chuan Wang,
Jaw-Jung Shin, Burn J. Lin, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan); Mark A. McCord,
Sameet K. Shriyan, KLA-Tencor Corp. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-48]
2:30 pm: A study of total blur for ultimate
resolution of electron-beam lithography toward
11nm half-pitch technology and beyond, Kozo
Ogino, Fujitsu Semiconductor Ltd. (Japan). [8680-49]
2:50 pm: MAPPER alignment sensor evaluation
on process wafers, Niels Vergeer, MAPPER
Lithography (Netherlands); Ludovic Lattard, CEA-LETI(France); Guido de Boer, Fred C. M. Couweleers,
Dhara Dave, MAPPER Lithography (Netherlands);
Jonathan Pradelles, CEA-LETI-Minatec (France);
Jessy Bustos, CEA-LETI (France). . . . . . . . [8680-50]
Coffee Break. . . . . . . . . . . .  Thu 3:10 pm to 3:30 pm

50

Room: Conv. Ctr. 230 B
10:30 am to 10:40 am
Presentation of the Best Student
Paper Award
Best Student Paper Award
Award Sponsored by

Session 13
Room: Conv. Ctr. 230 B
Thu 10:40 am to 12:10 pm
Cross-technology Comparisons,Hybrids, and Accuracy
Session Chairs: Vladimir A. Ukraintsev,
Nanometrology International, Inc. (UnitedStates); Chih-Ming Ke, Taiwan Semiconductor
Manufacturing Co. Ltd. (Taiwan)
10:40 am: Edge determination methodology forcross-section STEM image of photoresist featureused for reference metrology (Invited Paper),Kiyoshi Takamasu, Haruki Okitou, Satoru Takahashi,
The Univ. of Tokyo (Japan); Mitsuru Konno, Osamu
Inoue, Hiroki Kawada, Hitachi High-Technologies
Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . [8681-49]
11:10 am: Characterizing edge profiles ofphotomask structures with complementary
information from SEM and AFM, Dorothee Hüser,Wolfgang Hässler-Grohne, Physikalisch-Technische
Bundesanstalt (Germany) . . . . . . . . . . . . . .  [8681-50
11:30 am: Mosaicing of critical dimensions data toenable 1X node production, Johann Foucher, Nivea
G. S. Figueiro, Romain Thérèse, CEA-LETI (France);
YongHa Paul Lee, Ahjin Jo, Sang-Joon Cho, Park
Systems Corp. (Korea, Republic of). . . . . . .  [8681-51]
11:50 am: High-accuracy CD matching monitor
for CD-SEM beyond 20nm process, Kazuhiro
Ueda, Takeshi Mizuno, Katsumi Setoguchi, Hitachi
High-Technologies Corp. (Japan). . . . . . . . [8681-82]
Lunch Break . . . . . . . . . . . Thu 12:10 pm to 1:40 pm

SPIE Advanced Lithography 2013·www.spie.org/al

Session 14
Room: Conv. Ctr. 230 B
Thu 1:40 pm to 3:20 pm
Process Control
Session Chairs: Masafumi Asano, Toshiba
Corp. (Japan); Alek C. Chen, ASML Taiwan
Ltd. (Taiwan)
1:40 pm: In-field in design metrology target
integration for advanced CD and overlay processcontrol via DoseMapper and high-order overlay
correction for 28nm and beyond logic node,
Bertrand LeGratiet, Julien Ducote, Fabrice BernardGranger, STMicroelectronics (France). . . . . [8681-52]
2:00 pm: CD optimization methodology forextending optical lithography, Timothy J. Wiltshire,
Cheuk Wong, Gitanjali K. Seevaratnam, Nelson
Felix, Timothy A. Brunner, Pawan Rawat, IBM
Corp. (United States); Maryana Escalante-Marun,
ASML Netherlands B.V. (Netherlands); Won D. Kim,
Erica Rottenkolber, ASML US, Inc. (United States);
Abdalmohsen Elmalk, Vivian Wang, Christian Leewis,
Paul C. Hinnen, ASML Netherlands B.V.
(Netherlands). . . . . . . . . . . . . . . . . . . . . . . . . [8681-53]
2:20 pm: Improvement of focus accuracy onprocessed wafer exposure, Satomi Higashibata,Toshiba Corp. (Japan); Nobuhiro Komine, ToshibaMaterials Co., Ltd. (Japan); Kazuya Fukuhara, Koike
Takashi, Yoshimitsu Kato, Koji Hashimoto, Toshiba  
Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . [8681-54]
2:40 pm: Overlay analysis considered individual
factor: scanner, wafer process, Boo Hyun Ham,
Soon Mok Ha, Seong-Ho Moon, Byeongsoo Kim,
Joon-Soo Park, Seok-Woo Nam, SAMSUNGElectronics Co., Ltd. (Korea, Republic of) . . [8681-55]
3:00 pm: An investigation of high-order process
correction models and techniques to improve datafiltering by using a multipass cascading approachin an advanced technology node, Md Zakir
Ullah, Mohamed Fazly Mohamed Jazim, Stephen
Tran, Andy Qiu, Dawn Goh, TECH Semiconductor
Singapore Pte, Ltd. (Singapore); Jesline Ang,
Desmond Goh, KLA-Tencor Singapore (Singapore);David C. Tien, Chin-Chou K. Huang, KLA-Tencor
Corp. (United States); Dongsub Choi, KLA-Tencor
Korea (Korea, Republic of). . . . . . . . . . . . . . [8681-56]
Coffee Break. . . . . . . . . . . . Thu 3:20 pm to 3:50 pm

Thursday 28 February

Conference 8683

Conference 8684

Optical Microlithography XXVIDesign for Manufacturability through
Design-Process

Room: Conv. Ctr. 210 C
10:30 am to 10:40 am
2013 Best Student Paper Award
Award Sponsored by

Session 10
Room: Conv. Ctr. 210 C
Thu 10:40 am to 12:00 pm
Optical and DFM II: Joint Session
with Conferences 8683 and 8684
Session Chairs: Kafai Lai, IBM Corp. (UnitedStates); John L. Sturtevant, Mentor Graphics
Corp. (United States)
10:40 am: 3D resist profile modeling for OPC
applications, Yongfa Fan, Synopsys, Inc. (UnitedStates); Koh Kar Kit, Globalfoundries (China);
Wolfgang Hoppe, Bernd Kuechler, Synopsys
GmbH (Germany); Makoto Miyagi, Synopsys, Inc.
(United States); Thomas Schmöller, Synopsys
GmbH (Germany) . . . . . . . . . . . . . . . . . . [8683-43]
11:00 am: Triple-patterning lithography (TPL)
layout decomposition using end cutting, Bei Yu,
Jhih-Rong Gao, David Z. Pan, The Univ. of Texas
at Austin (United States). . . . . . . . . . . . . [8684-16]
11:20 am: On the accuracy of different Fouriertransforms of VLSI designs, Rajai Nasser, Paul
Hurley, IBM Zürich Research Lab.
(Switzerland) . . . . . . . . . . . . . . . . . . . . . . [8683-44]
11:40 am: Process window analysis ofalgorithmic assist feature placement options at
the 2xnm node DRAM, Jinhyuck Jeon, Shinyoung
Kim, Chan-Ha Park, Hyun-Jo Yang, Dong Gyu
Yim, SK Hynix, Inc. (Korea, Republic of).[8684-17]

Session 11
Room: Conv. Ctr. 210 C
Thu 1:20 pm to 3:00 pm

Session 6
Room: Conv. Ctr. 210 C
Thu 10:40 am to 12:00 pm

Session 7
Room: Conv. Ctr. 211 B
Thu 1:20 pm to 3:00 pm

Simulation

Optical and DFM II: Joint Session
with Conferences 8683 and 8684

Design Implications and Variability

Session Chairs: Peter D. Brooker, Synopsys,
Inc. (United States); Yuri Granik, Mentor
Graphics Corp. (United States)
1:20 pm: Benchmarking study of 3D mask
modeling for 2X and 1X nodes, ChangAn Wang,
GLOBALFOUNDRIES Inc. (United States).[8683-45]
1:40 pm: Validation of OPC resist-model
tuning after source modification with SMO,
Werner Gillijns, Jeroen Van de Kerkhove, PeterDe Bisschop, IMEC (Belgium); David Rio, ASM
Belgium N.V. (United States); Stephen D. Hsu, Mu
Feng, Jiong Jiang, Brion Technologies, Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-46]
2:00 pm: Topographic mask modeling with
reduced-basis finite element method, Jacek
K. Tyminski, Nikon Research Corp. of America(United States); Jan Pomplun, Lin Zschiedrich,
JCMwave GmbH (Germany); Donis G. Flagello,
Nikon Research Corp. of America (United States);Tomoyuki Matsuyama, Nikon Corp.
(Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-47]
2:20 pm: Accurate 3D EMF mask model for
full-chip simulation, Michael Lam, Kostas Adam,David Fryer, Christian D. Zuniga, David Wei,
Mentor Graphics Corp. (United States). . [8683-48]

Session Chairs: Kafai Lai, IBM Corp. (UnitedStates); John L. Sturtevant, Mentor Graphics
Corp. (United States)
10:40 am: 3D resist profile modeling for OPC
applications, Yongfa Fan, Synopsys, Inc. (UnitedStates); Koh Kar Kit, Globalfoundries (China);
Wolfgang Hoppe, Bernd Kuechler, Synopsys
GmbH (Germany); Makoto Miyagi, Synopsys, Inc.
(United States); Thomas Schmöller, Synopsys
GmbH (Germany) . . . . . . . . . . . . . . . . . . [8683-43]
11:00 am: Triple-patterning lithography (TPL)
layout decomposition using end cutting, Bei Yu,
Jhih-Rong Gao, David Z. Pan, The Univ. of Texas
at Austin (United States). . . . . . . . . . . . . [8684-16]
11:20 am: On the accuracy of different Fouriertransforms of VLSI designs, Rajai Nasser, Paul
Hurley, IBM Zürich Research Lab.
(Switzerland) . . . . . . . . . . . . . . . . . . . . . . [8683-44]
11:40 am: Process window analysis ofalgorithmic assist feature placement options at
the 2xnm node DRAM, Jinhyuck Jeon, Shinyoung
Kim, Chan-Ha Park, Hyun-Jo Yang, Dong Gyu
Yim, SK Hynix, Inc. (Korea, Republic of).[8684-17]
Lunch Break . . . . . . . . . Thu 12:00 pm to 1:20 pm

2:40 pm: Role of 3D photoresist simulation foradvanced technology nodes, Aravind Narayana
Samy, Rolf Seltmann, Frank Kahlenberg, Jessy
Schramm, GLOBALFOUNDRIES Dresden Module
Two, GmbH & Co. KG (Germany); Bernd Kuechler,
Ulrich K. Klostermann, Synopsys GmbH
(Germany) . . . . . . . . . . . . . . . . . . . . . . . . [8683-49]

Session Chairs: Robert Aitken, ARM
Inc. (United States); Michael L. Rieger,
Synopsys, Inc. (United States)
1:20 pm: Compact modeling of fin-widthroughness induced FinFET device variability
using the perturbation method, Qi Cheng,
Weiling Kang, Yijian Chen, Peking Univ. Shenzhen
Graduate School (China). . . . . . . . . . . . . [8684-18]
1:40 pm: Understanding device impact of lineedge/width roughness in frequency domain,
Peng Xie, He Ren, Aneesh Nainani, Huixiong
Dai, Christopher Bencher, Chris S. Ngai, Applied
Materials, Inc. (United States). . . . . . . . . [8684-19]
2:00 pm: SRAM circuit performance in thepresence of process variability of self-aligned
multiple patterning, Yijian Chen, Peking Univ.
Shenzhen Graduate School (China) . . . . [8684-20]
2:20 pm: Post-routing back-end-of-the-line
layout optimization for improved timedependent dielectric breakdown reliability, Tuck
Boon Chan, Andrew B. Kahng, Univ. of California,
San Diego (United States). . . . . . . . . . . . [8684-21]
2:40 pm: Double patterning: solutions inparasitics extraction, Dusan Petranovic, JamesK. Falbo, Nur Kurt-Karsilayan, Mentor Graphics
Corp. (United States). . . . . . . . . . . . . . . . [8684-22]
Coffee  Break. . . . . . . . . . Thu 3:00 pm to 3:30 pm

Coffee Break. . . . . . . . . . Thu 3:00 pm to 3:30 pm

Lunch Break . . . . . . . . . Thu 12:00 pm to 1:20 pm+1 360 676 3290

· help@spie.org·#SPIELitho

51

Thursday 28 February

Conference 8680

Conference 8681

Alternative Lithographic
Technologies V

Metrology, Inspection,
and Process Control for
Microlithography XXVII

Session 13
Room: Conv. Ctr. Hall 3
Thu 3:30 pm to 5:00 pm

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DSA Lines-Spaces

Late Breaking News

Session Chairs: Frank M. Schellenberg, Consultant (UnitedStates); Christopher Bencher, Applied Materials, Inc. (UnitedStates)Session Chairs: Ofer Adan, Applied Materials (Israel);
Alexander Starikov, I&I Consulting (United States)

3:30 pm: Fabrication of 28nm pitch Si fins with DSA lithography(Invited Paper), Gerard M. Schmid, Richard A. Farrell, Ji Xu, Moshe
E. Preil, GLOBALFOUNDRIES Inc. (United States); Michael J.
Cicoria, Vidhya Chakrapani, Tokyo Electron America, Inc. (UnitedStates); David R. Hetzer, TEL Technology Ctr., America, LLC (UnitedStates); Mark H. Somervell, Benjamen M. Rathsack, Tokyo Electron
America, Inc. (United States). . . . . . . . . . . . . . . . . . . . . . . . [8680-51]
4:00 pm: Directed self-assembly process integration in a 300mm
pilot line environment, Chi-Chun Liu, Jassem Abdallah, StevenJ. Holmes, Cristina Estrada-Raygoza, Yunpeng Yin, IBM Albany
NanoTech (United States); David R. Hetzer, TEL Technology Ctr.,
America, LLC (United States); Michael J. Cicoria, Mark H. Somervell,Tokyo Electron America, Inc. (United States); Matthew Colburn, IBM
Albany NanoTech (United States). . . . . . . . . . . . . . . . . . . . [8680-52]
4:20 pm: Process sensitivities in exemplary chemo-epitaxy
directed self-assembly integration, Paulina A. Rincon Delgadillo,
Univ. of Chicago (United States) and IMEC (Belgium); Roel Gronheid,
IMEC (Belgium); Guanyang Lin, Yi Cao, AZ Electronic Materials
USA Corp. (United States); Ainhoa Romo-Negreira, Tokyo Electron
Europe Ltd. (Netherlands); Mark H. Somervell, Kathleen Nafus,
Tokyo Electron America, Inc. (United States); Paul F. Nealey, Univ. of
Chicago (United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . [8680-53]
4:40 pm: Large-scale dynamics of directed self-assembly
block copolymers on chemically pre-patterned surface, Kenji
Yoshimoto, Takashi Taniguchi, Kyoto Univ. (Japan). . . . . . [8680-54]
Conference End.

Make SPIE your resource.
Join or renew online today.
spie.org/membership
help@spie.org+1 360 676 3290

52

Session 15
Room: Conv. Ctr. 230 B
Thu 3:50 pm to 5:20 pm

SPIE Advanced Lithography 2013·www.spie.org/al

3:50 pm: Gaps analysis for CD metrology beyond the 22nm node
(Invited Paper), Benjamin D. Bunday, SEMATECH North (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-57]
4:20 pm: High-speed atomic force microscope for patterned
defect review, Chanmin Su, Haiming Wang, Yan Hu, Shuiqing Hu,
Jason Osborne, Sean Hand, Jian Shi, Bruker Nano Inc. (UnitedStates). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8681-100]
4:40 pm: Metrology solutions for high-performance Germanium
multigate field-effect transistors using optical scatterometry,Hock-Chun Chin, Moh-Lung Ling, Nanometrics Inc. (United States);
Bin Liu, Xingui Zhang, National Univ. of Singapore (Singapore); Jie
Li, Yongdong Liu, Jiangtao Hu, Nanometrics Inc. (United States);
Yee-Chia Yeo, National Univ. of Singapore (Singapore). . [8681-107]
5:00 pm: Enhancing metrology by combining spacial variability
and global inference, Costas J. Spanos, Jae Yeon (Claire) Baek,
Univ. of California, Berkeley (USA) . . . . . . . . . . . . . . . . . . [8681-123]
Conference End.

Thursday 28 February^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^

Conference 8683

Conference 8684

Optical Microlithography
XXVI

Design for Manufacturability
through Design-Process

Session 12
Room: Conv. Ctr. 210 C
Thu 3:30 pm to 5:30 pm

Session 8
Room: Conv. Ctr. 211 B
hu 3:30 pm to 4:30 pm

Tooling

Benefits of Publishingin the Journal of Micro/
Nanolithography, MEMS, and
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Figures may be downloaded and captured
as PowerPoint slides with citations–

Open Access for articles immediately withvoluntary payment of page charges

Session Chairs: Soichi Owa, Nikon Corp. (Japan); Jo
Finders, ASML Netherlands B.V. (Netherlands)
3:30 pm: A study of vertical lithography for high-density 3D
structures, Masaki Mizutani, Shin-Ichiro Hirai, Ichiro Koizumi, KenIchiro Mori, Seiya Miura, Canon Inc. (Japan) . . . . . . . . . . . [8683-50]
3:50 pm: Power up: 120 Watt injection-locked ArF excimer laser
required for both multipatterning and 450mm wafer lithography,
Takeshi Asayama, Youichi Sasaki, Gigaphoton Inc. (Japan); Akihiko
Kurosu, Hiroaki Tsushima, Takahito Kumazaki, Gigaphoton Inc.
(Japan); Kouji Kakizaki, Komatsu Ltd. (Japan); Takashi Matsunaga,
Hakaru Mizoguchi, Gigaphoton Inc. (Japan). . . . . . . . . . . . [8683-51]
4:10 pm: High-power 120W ArF immersion laser for high-dose
applications, Rostislav I. Rokitski, Robert J. Rafac, Ricardo Dubi,
Joshua J. Thornes, John T. Melchior, Theodore Cacouris, Mary
Haviland, Daniel J. Brown, Cymer, Inc. (United States) . . . [8683-52]
4:30 pm: Comprehensive thermal aberration and distortion
control of lithographic lenses for accurate overlay, Yohei
Fujishima, Satoshi Ishiyama, Susumu Isago, Akihiro Fukui, Hajime
Yamamoto, Toru Hirayama, Tomoyuki Matsuyama, Yasuhiro
Ohmura, Nikon Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . [8683-53]
4:50 pm: High-order field-to-field corrections for imaging andoverlay for achieving sub-20nm lithography requirements, Jan
Mulkens, Michael Kubis, Paul C. Hinnen, Hans van der Laan, Wim
Tel, ASML Netherlands B.V. (Netherlands). . . . . . . . . . . . . [8683-54]
5:10 pm: High-accuracy and high-productivity immersion
scanner enabling 1xnm hp manufacturing, Yosuke Shirata, Yuichi
Shibazaki, Junichi Kosugi, Kikuchi Takahisa, Yasuhiro Ohmura,
Nikon Corp. (Japan). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8683-55]

Algorithms for DFM
Session Chairs: Chul-Hong Park, SAMSUNG Electronics
Co., Ltd. (Korea, Republic of); Jason P. Cain, Advanced
Micro Devices, Inc. (United States)
3:30 pm: Model-based hint for litho-hotspot fixing beyond 20nm
node, Jae-Hyun Kang, SAMSUNG Electronics Co., Ltd. (Korea,
Republic of); Sarah Mohamed, Mentor Graphics Egypt (Egypt); Wael
ElManhawy, Mentor Graphics Corp. (United States); Byung-Moo  
Kim, Naya Ha, SAMSUNG Electronics Co., Ltd.  (Korea, Republicof); Hung Bok Choi, Kee Sup Kim, SAMSUNG Electronics Co., Ltd.
(Korea, Republic of); Jean-Marie Brunet, Joe Kwan, Mentor Graphics
Corp. (United States); Kareem Madkour, Mentor Graphics Egypt(Egypt); Evan Lee, Mentor Graphics Korea (Korea, Republicof) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-23]
3:50 pm: A novel algorithm for automatic arrays detection in alayout, Marwah Shafee, Mentor Graphics Egypt (Egypt); Jea-Woo
Park, Ara Aslyan, Juan Andres Torres, Mentor Graphics Corp.
(United States); Kareem  Madkour, Mentor Graphics Egypt (Egypt);
Wael ElManhawy, Mentor Graphics Corp. (United States).[8684-24]
4:10 pm: An automated resource management system toimprove production tapeout turn-around time, Junwei Lu,
Mentor Graphics Corp. (China); Eric G. Guo, Qigwei Liu, Sherry Zhu,
Semiconductor Manufacturing International Corp. (China); Jenny
Tsai, Mark C. Simmons, Mentor Graphics Corp. (United States);
Jason Wu, Semiconductor Manufacturing International Corp.
(China). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [8684-25]
Conference End.

5:30 pm: Extending ArFi immersion down to 1xnm production
nodes by new TWINSCAN ‘NXT’ scanner generations, Remi
Pieternella, Wim P. de Boeij, Igor Bouchoms, Martijn Leenders,
Robert Kazinczi, Pieter Gunter, Martin Verhoeven, Siebe Landheer,
Marjin Hoofman, Joost Smits, Janneke van Heteren, ASML
Netherlands B.V. (Netherlands). . . . . . . . . . . . . . . . . . . . . . [8683-91}

Room: Conv. Ctr. 210 C…5:50 pm to 6:00 pm

www.spie.org/jm3

Closing Remarks

Session Chairs: Will Conley, Cymer, Inc. (United States);
Kafai Lai, IBM Corp. (United States)
Conference End.

+1 360 676 3290

· help@spie.org·#SPIELitho53

Index of Authors, Chairs, and Committee Members
Bold = SPIE Corporate Member

A
Abargues, Rafael [8682-31] S8, [8682-32]
S8
Abdallah, Jassem [8680-52] S13, [86833] S2Abdelghany, Hesham M. [8683-77] SPS1
Abdelwahed, Amr M.S. Tosson [8684-11]
S3Abe, Tomohiko [8680-72] SPS2
Abhari, Reza S. [8679-92] SPS1
Aburada, Ryota [8683-23] S5
Ackmann, Paul W. [8683-6] S2, [868361] SPS1
Adam, Kostas [8683-48] S11
Adams, Daniel E. [8681-17] S4Adan, Ofer 8681 Program Committee,
8681 S11 Session Chair, 8681 S15
Session Chair, [8681-7] S3Agarwal, Kanak B. [8684-4] S2Agrawal, Gaurav [8681-2] S2Agudelo, Viviana [8683-42] S5, [8683-42]
S9
Ahmad, Ahmad [8680-42] S11, [8680-44]
S11
Ahn, Jeongho [8681-81] SPS1
Ahn, Jinho [8679-79] SPS1
Ahn, Sean [8680-31] S8Aida, Kouhei [8680-13] S4, [8680-13] S6Aitken, Robert 8684 Program Committee,
8684 S7 Session Chair
Akai, Keiji [8682-19] S4, [8682-19] S6Alagna, Paolo [8683-28] S6Alayo, Nerea [8680-10] S3Albert, Johan [8685-10] S3Albrecht, Thomas R. [8680-21] S6, [868021] S8, [8680-30] S8, [8685-21] S6
Ali, Iqbal [8681-32] S9Alleaume, Clovis [8683-38] S8Allen, Robert Symposium Committee,
8682 Program Committee, 8682 S4
Session Chair
Allgair, John A. 8681 Program
Committee, [8681-2] S2Alphen, Erwin V. [8679-50] S11
Altamirano-Sánchez, Efrain [8682-6] S2,[8685-5] S2, [8685-7] S2Alvis, Roger [8681-6] S2Amano, Tsuyoshi [8679-46] S10, [867960] SPS1, [8679-64] SPS1, [8679-66]
SPS1
Amir, Nuriel [8681-43] S11, [8681-84]
SPS1, [8681-87] SPS1
Amit, Eran [8681-84] SPS1, [8681-87]
SPS1
Anderson, Christopher Neil [8679-25] S6Anderson, Erik H. [8681-22] S6Ang, Jesline [8681-56] S14
Anno, Yusuke [8679-95] SPS1
Anno, Yuusuke [8680-58] SPS1, [868215] S4

54

Antohe, Alin O. [8679-48] S10, [8679-59]
SPS1, [8679-62] SPS1
Anyadiegwu, Clement T. [8682-27] S8Aoki, Masami [8681-76] SPS1
Aoyama, Hajime [8683-22] S5, [8683-29]
S7, [8683-9] S3Apetz, Rolf [8679-8] S3
Arai, Koji [8681-42] S11
Arai, Tadashi [8683-4] S2Arakawa, Mototaka [8679-58] SPS1,[8679-86] SPS1
Arceo, Abraham [8681-12] S4, [8681-13]
S4, [8681-31] S9, [8681-33] S9Arellano, Noel [8680-33] S4, [8680-33] S9Argoud, Maxime [8680-37] S10, [8680-5]
S2
Arisawa, Yukiyasu [8679-68] SPS1,[8679-99] SPS1
Armeanu, Ana Maria [8683-18] S4Arnold, William H. Symposium
Committee, [8681-1] S1Aryal, Mukti [8680-29] S8Asada, Kunihiro [8680-75] SPS2
Asai, Masaya [8679-104] SPS1Asakawa, Koji [8680-59] SPS1
Asano, Masafumi 8681 Program
Committee, 8681 S14 Session Chair,
8681 S2 Session Chair, [8681-29] S6,[8681-29] S8, [8681-30] S6, [8681-30]
S8
Asayama, Takeshi [8683-51] S12
Ashby, Paul D. [8681-23] S6, [8682-22]
S7
Ashworth, Dominic [8679-42] S9, [867996] SPS1
Aslyan, Ara [8684-24] S8Athimulam, Raja [8685-24] SPSAtkarc, Prasad [8684-8] S3Attota, Ravikiran [8679-27] S6, [8681-32]
S9, [8681-33] S9Axelrad, Valery [8683-4] S2
Ayothi, Ramakrishnan 8682 Program
Committee, 8682 S8 Session Chair,[8682-38] S10, [8682-44] S11
Azarnouche, Laurent M. [8685-9] S3Azuma, Tsukasa [8680-40] S10, [8680-55]
SPS1

B
Badger, Karen D. [8679-18] S4Baek, GwangHyun [8685-16] S5Baidya, Bikram [8684-8] S3Baik, Ki-Ho [8683-60] SPS1
Bailey, Brad [8679-37] S8Baklanov, Mikhail R. [8685-14] S4Balakrishnan, Srinivasan [8680-33] S4,[8680-33] S9Baluswamy, Pary [8681-106] SPS1, 8683
Program Committee, 8683 S6 Session
Chair
Balzer, Felix Gerhard [8680-44] S11,
[8681-116] SPS2
Banerjee, Shayak [8684-4] S2Bangsaruntip, Sarunya [8685-19] S6Banna, Samer [8685-17] S5
Bannister, Julie 8685 Program
Committee, 8685 S4 Session Chair,[8685-13] S4Bao, Xin-Yu [8680-35] S4, [8680-35] S9Barboutis, Annett [8679-72] SPS1
Barclay, George G. 8679 S2 Session
Chair, 8682 Program Committee, 8682
S3 Session Chair, [8682-68] SPS3
Barclay, Michael [8679-22] S5Bardet, Benjamin [8685-9] S3Barnes, Bryan M. [8681-13] S4, [8681-31]
S9
Barnola, Sebastien [8680-37] S10
Bartynski, Robert A. [8679-7] S2, [8679-7]
S3
Bar-Zvi, Maayan [8681-7] S3Bastard, David [8681-14] S4Bastiaansen, Cees W. M. [8682-65] SPS3
Bates, Christopher M. [8680-6] S2Baylav, Burak [8683-68] SPS1
Beacham, Adam [8683-37] S8
Beak, Du Hyun [8683-60] SPS1
Bekaert, Joost P. M. [8683-28] S6Belete, Melkamu A. [8685-31] SPS
Belic, Nikola [8680-78] SPS2
Bell, William K. [8682-30] S8Belledent, Jérôme [8680-18] S5, [868037] S10
Bello, Abner [8681-7] S3
Beltman, Jan [8681-4] S2, [8681-40] S11
Bencher, Christopher 8680 Program
Committee, 8680 S13 Session Chair,8680 S2 Session Chair, [8682-5] S2,[8684-19] S7
Bendall, Lisa [8679-27] S6Bender, Markus 8679 Program
Committee
Benk, Markus P. [8679-44] S10
Benschop, Jos P. 8679 Program
Committee, 8679 S1 Session Chair,[8683-25] S6
Bent, Stacey F. [8682-29] S8Berard-Bergery, Sebastien [8680-18] S5Berg, Robert F. [8679-22] S5, [8679-71]
SPS1
Berglund, Mari [8680-18] S5Bernard-Granger, Fabrice [8681-52] S14
Berthiaume, Sylvain [8681-110] SPS1
Besacier, Maxime [8683-38] S8Besen, Matthew M. [8679-87] SPS1
Bevis, Chris F. [8680-16] S5, [8680-77]
SPS2
Beyne, Eric [8683-2] S1
Bhatia, Anadi [8681-14] S4SPIE Advanced Lithography 2013·

Bhattacharyya, Kaustuve [8681-3] S2,[8683-25] S6Bhattarai, Suchit [8679-76] SPS1
Biafore, John J. [8679-101] SPS1, [867995] SPS1, [8682-2] S1, [8682-39] S10
Bian, Hao [8680-68] SPS2
Biel, Martin [8679-72] SPS1
Bizjak, Tanja [8683-88] SPS1Blachut, Gregory [8680-6] S2Black, Charles T. 8685 S6 Session ChairBlackborow, Paul [8679-87] SPS1
Blackwell, James M. [8681-23] S6, [868222] S7Blackwood, Jeff [8681-6] S2Blakey, Idriss [8680-8] S2
Blancquaert, Yoann [8681-40] S11,
[8681-83] SPS1
Bocharova, Irina [8679-7] S2, [8679-7] S3Bodermann, Bernd [8681-75] SPS1
Boemmels, Juergen [8679-107] SPS1,[8683-5] S2Bonam, Ravi [8679-18] S4Bonhôte, Christian [8685-21] S6Borah, Dipu [8680-60] SPS1
Borisov, Vladimir Mikhailovich [8679-110]
SPS1
Boroumand Azad, Javaneh [8682-80]
SPS4
Boullart, Werner [8685-7] S2, [8685-10]
S3, [8685-13] S4, [8685-24] SPS,
[8685-5] S2
Bourov, Anatoly Y. [8681-85] SPS1
Bouyssou, Régis [8681-26] S7Bouyssous, Régis [8681-74] SPS1
Bowering, Norbert R. [8679-12] S3Bozak, Ron R. [8679-53] S11
Bozano, Luisa D. 8682 Program
Committee, 8682 S9 Session Chair,[8682-44] S11
Bozdog, Cornel [8681-2] S2, [8681-30]
S6, [8681-30] S8Bozinova, Luna [8679-92] SPS1
Braggin, Jennifer [8682-74] SPS5
Brainard, Robert L. 8679 Program
Committee, 8679 S2 Session Chair,[8679-7] S2, [8679-7] S3, 8682 S3
Session Chair
Brakensiek, Nick L. [8682-73] SPS5,[8682-75] SPS5
Brandt, David C. [8679-12] S3, [8679-51]
S11, [8679-88] SPS1, [8679-89] SPS1
Bremer, Mark [8679-42] S9Breninger, Andy [8683-84] SPS1
Bret, Tristan [8679-33] S7
Breyta, Gregory [8682-28] S8Briend, Guillaume [8681-26] S7Brihoum, Melisa [8685-9] S3Brist, Travis [8681-110] SPS1Bristol, Robert [8680-39] S10
Brodie, Alan D. [8680-16] S5, [8680-77]
SPS2

www.spie.org/al

Brodsky, Colin J. [8682-74] SPS5Broer, Dick J. [8682-65] SPS3
Brooker, Peter D. [8681-110] SPS1,
8683 Program Committee, 8683 S11
Session Chair
Brown, Daniel J. [8679-51] S11, [8679-89]
SPS1, [8683-52] S12
Browning, Clyde H. [8680-76] SPS2
Bruce, Robert L. [8685-6] S2Brunet, Jean-Marie [8684-23] S8Brunner, Timothy A. Symposium
Committee, [8681-53] S14
Bucchignano, James J. [8685-19] S6Buchholz, Christian [8679-72] SPS1
Buck, Peter D. 8683 Program
Committee, [8683-6] S2Buengener, Ralf [8681-12] S4Buergel, Christian [8683-6] S2
Bunday, Benjamin D. 8681 Program
Committee, 8681 S10 Session Chair,
8681 S4 Session Chair, [8681-12] S4,[8681-18] S5, [8681-20] S6, [8681-33]
S9, [8681-36] S10, [8681-57] S15
Burger, Sven [8681-102] SPS1, [868175] SPS1
Burkhardt, Martin [8679-94] SPS1
Burns, Sean D. 8682 Program
Committee, 8682 S11 Session Chair
Busch, Jens [8683-61] SPS1
Bustos, Jessy [8680-50] S12
Byers, Erik R. [8683-31] S7

CCabrini, Stefano [8680-10] S3, [8680-27]
S8, [8682-69] SPS4
Cacouris, Theodore [8683-52] S12,[8683-62] SPS1, [8683-71] SPS1
Cai, Boxiu Spike [8681-68] SPS1, [868177] SPS1
Cain, Jason P. 8681 Conference
CoChair, 8681 S1 Session Chair,
8681 S3 Session Chair, 8684 Program
Committee, 8684 S8 Session Chair,[8684-2] S1Calafiore, Giuseppe [8680-10] S3Cameron, James F. [8679-6] S2, [8679-6]
S3, [8682-39] S10
Camp, Janay [8681-94] SPS1
Campbell, Chris [8682-5] S2Campochiaro, Cecelia [8681-14] S4Cao, Yi [8680-15] S4, [8680-15] S6,[8680-30] S8, [8680-53] S13, [8680-64]
SPS1
Capodieci, Luigi 8684 Program
Committee, 8684 S3 Session Chair,[8684-3] S1, [8684-9] S3Carballo, Juan-Antonio 8684 Program
Committee, 8684 S2 Session Chair

2014
Technologies for semiconductor lithography R&D,
devices, tools, fabrication, and services

Mark Your Calendar
www.spie.org/al2014
Conference & Courses

Topics:23–27 February 2014

- Advanced Etch Technology for Nanopatterning- EUV Lithography- Alternative Lithographic Technologies- Metrology, Inspection, and Process Control- Advances in Resist Materials and Processing
Technology- Optical Microlithography- Design for Manufacturability through Design-Process
Integration

Exhibition
25–26 February 2014

Location
San Jose Marriott and San
Jose Convention Center,
San Jose, California, USA+1 360 676 3290

· help@spie.org·#SPIELitho55

Index of Authors, Chairs, and Committee Members
Bold = SPIE Corporate Member

Carr, Brandy L. [8685-26] SPSCarroll, Allen [8680-16] S5
Casimiri, Eric [8679-3] S1
Chakrabarty, Souvik [8679-5] S2, [86795] S3Chakraborty, Tonmoy [8679-45] S10,[8679-47] S10
Chakrapani, Vidhya [8680-51] S13
Chan, Boon Teik [8682-20] S4, [8682-20]
S6
Chan, Tuck Boon [8684-21] S7
Chan, Ya-Ting [8682-12] SPS2
Chandorkar, Saurabh A. [8680-9] S3Chang, Ching-Yu [8682-78] SPS3
Chang, Shih-Wei [8680-14] S4, [8680-14]
S6
Chang, Shu-Hao [8679-23] S5, [8679-80]
SPS1
Chang, Ya-Hui [8682-78] SPS3
Chang, Ya-Ting [8681-66] SPS1
Chang, Yi-Shiang [8682-12] SPS2
Chao, Rikon [8679-57] SPS1
Chapuis, Yves-Andre [8680-21] S6,[8680-21] S8, [8685-21] S6Chen, Alek C. 8681 Program Committee,
8681 S14 Session Chair, [8681-115]
SPS2
Chen, Anchor C. H. [8681-79] SPS1
Chen, Chang Kai [8682-60] SPS2
Chen, Charlie [8681-43] S11, [8681-69]
SPS1
Chen, Chia Min [8682-68] SPS3
Chen, Chih-Yu [8681-115] SPS2
Chen, Chung-Ping [8683-66] SPS1
Chen, Chun-Hsun [8682-12] SPS2
Chen, Feng [8680-68] SPS2
Chen, Frederick T. [8682-35] S9, [868336] S8, [8685-27] SPS
Chen, Hong Chih [8685-27] SPS
Chen, Howard [8681-97] SPS1
Chen, Hsien-Hung [8681-89] SPS1
Chen, Jack J. H. [8679-23] S5, [8679-56]
SPS1, [8679-80] SPS1
Chen, Jay [8681-79] SPS1
Chen, Jen-Hom [8680-48] S12
Chen, Jinping [8679-112] SPS1
Chen, Kuang-Chao [8683-72] SPS1,[8683-73] SPS1
Chen, Kuang-Jung [8682-28] S8Chen, Lee [8685-15] S5Chen, Lei [8682-36] S9Chen, Li [8679-109] SPS1
Chen, Li-Jui 8679 Program Committee,
8679 S3 Session Chair
Chen, Ming-Jui [8681-89] SPS1, [868369] SPS1, [8683-74] SPS1
Chen, Norman [8683-61] SPS1
Chen, Peng-Sheng [8685-27] SPS
Chen, Shu-Fang [8679-23] S5
Chen, Wei-Su G. [8682-35] S9, [8683-36]
S8, [8685-27] SPS
Chen, Xiuguo [8681-119] SPS2

56

Chen, Ye [8681-60] SPS1
Chen, Yen-Liang [8681-41] S11
Chen, Yijian [8683-34] S8, [8684-14] S5,[8684-14] S9, [8684-15] S5, [868415] S9, [8684-18] S7, [8684-20] S7,[8685-18] S5Chen, Ying-Yu [8679-23] S5
Chen, Yi-Yin [8683-40] S5, [8683-40] S9Chen, Yonghui [8681-90] SPS1, [8683-90]
SPS1
Chen, Yongmei [8682-5] S2, [8683-5] S2
Chen, Yu Yu [8681-112] SPS1
Cheng, Guojie [8681-60] SPS1
Cheng, Han-Hao Elliot [8680-8] S2Cheng, Huikai [8681-6] S2Cheng, Jianrui [8681-85] SPS1, [8683-90]
SPS1
Cheng, Jing [8682-81] SPS3
Cheng, Joy Y. 8680 Program Committee,
8680 S4 Session Chair, 8680 S6
Session Chair, [8680-15] S4, [8680-15]
S6, [8680-32] S4, [8680-32] S9, [868033] S4, [8680-33] S9, 8681 S8 Session
Chair, 8682 S6 Session Chair, [868215] S4, [8683-3] S2, [8685-19] S6Cheng, Kangguo [8682-28] S8Cheng, Qi [8683-34] S8, [8684-18] S7Cheng, Shaunee Y. [8679-55] S11, 8681
Program Committee, [8683-27] S6,[8683-5] S2Cheng, Yong Wah [8683-20] S5Cheng, Yu Wei [8681-43] S11
Cheng, Yung-Feng [8681-89] SPS1,[8683-69] SPS1, [8683-74] SPS1,[8683-78] SPS1
Cheshmehkani, Ameneh [8682-82] SPS3
Chevalier, Xavier [8680-37] S10, [8680-5]
S2Chia, Robin [8683-20] S5
Chien, Ming-Chin [8679-23] S5Chien, Shang-Chieh [8679-23] S5, [867980] SPS1
Chin, Hock-Chun [8681-107] SPS1
Chin, Rodney [8679-42] S9Chiu, Mao-Hsing [8682-12] SPS2
Chiu, Ming-Chien [8682-12] SPS2
Cho, Joonyeon [8682-27] S8, [8682-41]
S10
Cho, Kyoungyoung [8679-78] SPS1,[8682-43] S11
Cho, Sangho [8682-37] S4Cho, Sang-Joon [8681-5] S2, [8681-51]
S13
Cho, Tae S. [8679-88] SPS1
Cho, Yong Jai [8681-37] S10
Choi, Byoung Il [8682-24] S7
Choi, Byung Jin [8680-31] S8
Choi, Dae-Han [8685-11] S3Choi, Dongsub [8681-43] S11, [8681-56]
S14, [8681-92] SPS1
Choi, Hung Bok [8684-23] S8
Choi, Hyun Chol [8683-19] S5

Choi, Jeaseung [8683-15] S4Choi, Ji-Hyeon [8683-21] S5
Choi, Jin [8683-21] S5
Choi, Jin Woo [8684-5] SPS
Choi, Jin-Phil [8683-60] SPS1
Choi, Jungdal [8683-11] S3Choi, Jung-Hoe [8683-15] S4Choi, Kang-Hoon [8680-46] S12, [868234] S9
Choi, Seiryung
Choi, Seong-Woon [8683-11] S3Chou, Chih-Shiang [8681-66] SPS1
Chou, Shuo-Yen [8683-40] S5, [8683-40]
S9Christianson, Matthew D. [8682-42] S10
Chua, Gek Soon [8679-30] S7
Chuang, Kai-Lin [8682-68] SPS3
Chuang, Ya-Mi [8680-8] S2Chunder, Aninarupa [8680-15] S4, [868015] S6Chung, Chilhee
Chung, Yeon Sook [8682-26] S7Cicoria, Michael J. [8680-51] S13, [868052] S13, [8682-14] S4Civay, Deniz [8679-24] S6, [8679-28] S6,[8679-97] SPS1
Clark, Corrie [8682-37] S4Claus, Rene A. [8679-69] SPS1
Clifford, Chris H. [8679-30] S7
Cohen, Guy [8681-84] SPS1, [8681-87]
SPS1
Colburn, Matthew [8680-52] S13, [868214] S4, [8682-28] S8Coley, Suzanne M. [8679-6] S2, [8679-6]
S3, [8682-39] S10
Conley, Will 8683 Conference Chair,
8683 S1 Session Chair, 8683 S9
Session Chair, [8683-58] SPS1, [868362] SPS1, [8683-71] SPS1, 8684 S5
Session Chair
Conradi, Olaf [8679-52] S11
Constancias, Christophe [8681-39] S11
Constantoudis, Vassilios [8679-111]
SPS1, [8679-95] SPS1, [8681-120]
SPS1, [8685-4] S2Corcoran, Noel [8681-109] SPS1
Cordes, Aaron [8681-36] S10
Cork, Christopher M. [8683-7] S2Corliss, Daniel A. 8679 Program
Committee, 8679 S11 Session Chair,[8679-18] S4, [8679-94] SPS1
Coskun, Tamer H. [8679-30] S7
Couweleers, Fred C. M. [8680-50] S12
Cramer, Hugo [8683-25] S6Crimmins, Timothy F. 8681 Program
Committee, 8681 S4 Session Chair,
8681 S9 Session Chair
Cronin, Michael F. [8682-73] SPS5
Crosland, Nigel C. E. [8680-24] S7Cross, Andrew J. [8680-20] S6, [8680-20]
S8, [8681-76] SPS1, [8685-29] SPS
Cui, Liping [8681-2] S2SPIE Advanced Lithography 2013·

Cummings, Kevin [8679-42] S9Cunge, Gilles [8680-37] S10, [8680-5] S2,[8685-17] S5Curreli, Davide [8679-13] S3, [8679-93]
SPS1
Cushen, Julia D. [8680-6] S2

D
Dai, Huixiong [8679-32] S7, [8679-55]
S11, [8682-5] S2, [8683-5] S2, [868419] S7
Dai, Johnny [8681-79] SPS1
Dai, Vito [8684-9] S3
Dammel, Ralph R. Symposium
Committee, 8680 S4 Session Chair,
8682 Program Committee, 8682 S6
Session Chair
Dang, Tuan Nguyen [8679-77] SPS1,[8679-81] SPS1, [8679-83] SPS1
Dansberg, Michel [8680-23] S7
Darling, Seth B. [8680-4] S2
Darnon, Maxime 8685 Program
Committee, 8685 S3 Session Chair,[8685-17] S5
Das, Sanjana [8679-7] S2, [8679-7] S3
Dasari, Prasad [8681-27] S7, [8681-28]
S7
Dave, Aasutosh [8683-20] S5, [8683-56]
SPS1
Dave, Dhara [8680-50] S12
De Bisschop, Peter [8681-9] S3, [868337] S8, [8683-46] S11
de Boer, Guido [8680-23] S7, [8680-50]
S12
De Dea, Silvia [8679-12] S3
De Gendt, Stefan [8685-7] S2
De Haan, Martine [8683-62] SPS1de Marneffe, Jean-Francois G. N. [868514] S4
De Martino, Antonello [8681-39] S11
de Pablo, Juan J. 8680 Program
Committee, [8680-13] S4, [8680-13]
S6
De Schepper, Peter [8685-5] S2, [8685-7]
S2
Dean, Leon M. [8680-6] S2
Dechene, Dan J. [8683-3] S2Dekkers, Harold [8685-10] S3
Del Rey, Ryan [8679-7] S2, [8679-7] S3Delalande, Michael [8680-37] S10, [86805] S2Delaney, Kris T. [8680-39] S10
Delvaux, Christie [8682-6] S2Demmerle, Wolfgang [8683-22] S5
Demuynck, Steven [8679-107] SPS1
Denbeaux, Gregory [8679-113] SPS1,[8679-114] SPS1, [8679-7] S2, [86797] S3

www.spie.org/al

Deng, Xiao [8681-118] SPS2
Depre, Jerome [8681-40] S11, [8681-83]
SPS1
Depre, Laurent [8683-38] S8, [8683-39]
S8
Desvoivres, Latifa [8681-26] S7Dezauzier, Christophe [8681-40] S11
D’havé, Koen [8683-27] S6, [8683-28] S6,[8683-5] S2
Dhuey, Scott D. [8680-10] S3, [8680-27]
S8Di, Ming [8681-101] SPS1
Diago, Pedro Rizo [8679-3] S1
Diebold, Alain C. [8681-21] S6Dinachali, Saman Safari [8682-83] SPS3
Dinh, Cong Que [8682-18] S5
Dixson, Ronald G. [8681-31] S9
Do, Mun-hoi [8683-15] S4
Do, Thuy [8683-18] S4Dobisz, Elizabeth A. 8680 Program
Committee, 8680 S8 Session Chair,[8680-21] S6, [8680-21] S8, [8685-21]
S6
Doerk, Gregory S. [8680-33] S4, [868033] S9, [8683-3] S2Doh, Jonggul [8679-79] SPS1
Domann, Gerhard [8682-63] SPS3
Doris, Bruce [8682-28] S8Dover, Russell J. [8683-38] S8, [8683-39]
S8
Dowling, Robert C. [8680-24] S7
Doytcheva, Maya [8681-4] S2
Drndic, Mirija [8680-83] SPS4
Droste, Richard [8679-50] S11
Du, Guangqing [8680-68] SPS2
Du, Yuelin [8684-13] S5, [8684-13] S9Duan, Lifeng [8681-90] SPS1, [8683-90]
SPS1
Dubi, Ricardo [8683-52] S12
Dubrau, Benjamin [8679-72] SPS1
Ducote, Julien [8681-52] S14
Dumont, Benjamin [8681-26] S7
Dunn, Derren [8685-3] S1Durand, William J. [8680-6] S2Durant, Stephane [8680-20] S6, [8680-20]
S8Durrani, Zahid [8680-42] S11
Dusa, Mircea V. Symposium Chair
Duval, Paul J. [8680-67] SPS2
Dziomkina, Nina V. [8679-3] S1

E
Ebersbach, Peter [8681-2] S2Echigo, Masatoshi [8682-66] SPS3
Edgeworth, Robert [8681-32] S9Ekinci, Yasin [8679-35] S8, [8679-75]
SPS1
Elam, Jeffrey W. [8680-4] S2

Index of Authors, Chairs, and Committee Members
Elg, Dan [8679-13] S3, [8679-88] SPS1,[8679-93] SPS1
Ellison, Christopher J. [8680-6] S2
Ellwi, Samir S. [8679-90] SPS1
Elmalk, Abdalmohsen [8681-53] S14
ElManhawy, Wael [8684-23] S8, [868424] S8Elsewefy, Omar [8683-20] S5, [8683-56]
SPS1
Endo, Masayuki [8682-53] SPS2
Endo, Takafumi [8682-9] S2, [8682-9] S3Engblom, Peter D. [8683-31] S7Engelen, Andre [8683-25] S6Engelmann, Sebastian U. 8685 Program
Committee, 8685 S3 Session Chair,[8685-19] S6, [8685-6] S2Engelstad, Roxann L. Symposium
Committee
Englard, Ilan [8681-104] SPS1, [8681105] SPS1
Enomoto, Satoshi [8679-77] SPS1, [867981] SPS1, [8679-83] SPS1, [8682-18]
S5, [8682-45] S11
Enomoto, Yuuji [8681-10] S3
Entradas, Jorge [8683-14] S4, [8683-18]
S4
Eom, Tae-Seung [8679-54] S11
Ercken, Monique [8682-6] S2
Erdmann, Andreas [8679-33] S7, [867961] SPS1, 8683 Program Committee,
8683 S3 Session Chair, [8683-42] S5,[8683-42] S9, [8683-63] SPS1
Erenturk, Burcin [8683-19] S5
Erfurth, Wilfried [8682-77] SPS3
Ershov, Alex I. [8679-12] S3Esashi, Masayoshi [8680-17] S5
Escalante-Marun, Maryana [8681-53] S14
Estelle, Tom [8682-68] SPS3
Estrada-Raygoza, Cristina [8680-52] S13
Evans, Jessica P. [8680-14] S4, [8680-14]
S6
Evanschitzky, Peter [8679-33] S7, [867961] SPS1, [8683-42] S5, [8683-42] S9

F
Fairbrother, Howard [8679-22] S5Fakhry, Moutaz [8683-3] S2Falbo, James Kenneth [8684-22] S7
Fan, Yongfa [8683-15] S4, [8683-43] S10,[8683-43] S6
Fan, Yu-Jen [8679-113] SPS1, [8679-96]
SPS1
Fang, Ruifang [8683-87] SPS1
Fang, Wei [8679-18] S4Faradzhev, Nadir S. [8679-22] S5, [867971] SPS1
Farah, Abdi [8680-26] S7
Farnham, William B. [8682-79] SPS4

Farrar, Nigel R. [8679-51] S11, [8679-89]
SPS1, 8683 Program Committee, 8683
S8 Session Chair
Farrell, Richard A. [8680-51] S13
Farys, Vincent [8683-38] S8Fathy, Rami [8684-11] S3Feick, Henning [8683-59] SPS1
Feigl, Torsten [8679-12] S3
Feldbaum, Michael R. [8680-28] S8Felix, Nelson [8681-53] S14
Feng, Chen [8684-14] S5, [8684-14] S9Feng, Mu [8683-39] S8, [8683-46] S11
Fenger, Germain L. [8679-24] S6, [867930] S7, [8679-43] S9Fernandez, Jorge P. [8680-20] S6, [868020] S8, [8685-29] SPS
Fernandez-Cuesta, Irene [8680-27] S8Fiedler, Tobias [8679-12] S3Figueiro, Nivea G. S. [8681-38] S10,[8681-51] S13
Figueiro, Thiago R. [8680-76] SPS2,[8682-34] S9Filippov, Pavel [8681-86] SPS1
Finders, Jo 8683 Program Committee,
8683 S12 Session Chair
Fischer, Andreas [8679-72] SPS1
Fischer, Daniel [8681-7] S3Fischer, Daniel S. [8681-12] S4Flagello, Donis G. Symposium
Committee, [8683-24] S5, [8683-47]
S11
Fletcher, Brian [8680-11] S3Fleury, Guillaume [8680-37] S10, [8680-5]
S2
Flores, Ronnie P. [8683-62] SPS1, [868371] SPS1
Flöter, Bernhard [8679-73] SPS1
Fomenkov, Igor V. [8679-12] S3, [867951] S11, [8679-89] SPS1
Fonseca, Carlos 8683 Program
Committee, 8683 S4 Session Chair
Foong, Yee Mei [8683-20] S5, [8683-57]
SPS1, [8683-76] SPS1
Foord, David [8681-6] S2
Ford, Carl [8681-2] S2Foubert, Philippe [8679-100] SPS1
Foucher, Johann [8680-37] S10, [868138] S10, [8681-5] S2, [8681-51] S13,
[8681-86] SPS1
Fouchier, Marc [8685-9] S3
Fox-Lyon, Nick [8685-6] S2Fredrickson, Glenn H. [8680-39] S10,[8680-41] S10
Freed, Regina [8680-16] S5, [8680-77]
SPS2
Freitag, Martin [8680-46] S12, [8682-34]
S9Friz, Alexander [8679-20] S5, [8679-78]
SPS1
Frommhold, Andreas [8682-25] S7,[8685-25] SPS
Fronheiser, Jody [8681-21] S6Fryer, David [8683-48] S11
Fuchimoto, Daisuke [8681-9] S3
Fühner, Tim [8679-61] SPS1, [8683-42]
S5, [8683-42] S9Fujii, Kiyoshi [8683-85] SPS1
Fujimoto, Akira [8680-59] SPS1
Fujimoto, Masashi [8683-85] SPS1
Fujishima, Yohei [8683-53] S12
Fujitani, Noriaki [8682-9] S2, [8682-9] S3Fujiwara, Tomoharu [8683-9] S3Fukuhara, Kazuya [8681-54] S14, [868329] S7Fukui, Akihiro [8683-53] S12
Fukunaga, Fumihiko [8681-64] SPS1

G
Gallagher, Emily E. 8679 Program
Committee, 8679 S7 Session Chair,[8679-18] S4, [8679-53] S11
Gallatin, Gregg M. [8680-63] SPS1
Gambino, Nadia [8679-92] SPS1
Ganesan, Ramakrishnan [8682-83] SPS3
Gans, Fritz [8683-6] S2
Gao, He H. [8680-30] S8, [8685-21] S6Gao, Jhih-Rong [8684-16] S10, [8684-16]
S6, [8684-6] S2, [8684-8] S3Gao, Shao Wen [8681-62] SPS1
Gardner, Dennis Floyd [8681-17] S4Garreis, Reiner [8679-40] S9Gatefait, Maxime [8681-4] S2, [8681-73]
SPS1, [8681-74] SPS1
Gau, Tsai-Sheng [8681-66] SPS1, 8683
Program Committee, 8683 S2 Session
Chair, [8683-40] S5, [8683-40] S9
Ge, Adam [8681-7] S3
Geddes, Joseph B. [8680-29] S8Geh, Bernd [8679-40] S9, 8683 Program
Committee, 8683 S7 Session Chair
Germer, Thomas A. [8681-25] S7Ghaida, Rani S. [8681-11] S3Gharbi, Ahmed [8680-37] S10, [8680-5]
S2Giannelis, Emmanuel P. [8679-5] S2,[8679-5] S3, [8682-26] S7Gignac, Lynne M. [8685-19] S6Gillijns, Werner [8683-46] S11
Ginzburg, Valeriy V. [8680-14] S4, [868014] S6, [8682-16] S4Girard, Luc [8679-42] S9Glatzel, Holger K. [8679-42] S9Gleason, Bob [8679-29] S7Goasmat, Francois [8681-13] S4, [868131] S9Goddard, Lynford [8681-15] S4Godet, Ludovic [8682-5] S2Godny, Stephane [8681-29] S6, [8681-29]
S8, [8681-30] S6, [8681-30] S8+1 360 676 3290

· help@spie.org·

Godwin, Milton C. [8679-48] S10, [867962] SPS1, [8681-65] SPS1
Goethals, Mieke [8679-100] SPS1
Gogolides, Evangelos [8679-111] SPS1,[8681-120] SPS1, [8685-4] S2
Goh, Dawn [8681-56] S14
Goh, Desmond [8681-56] S14
Goirand, Pierre-Jerome [8681-4] S2,[8681-73] SPS1, [8681-74] SPS1
Goldberg, Kenneth A. [8679-24] S6,[8679-28] S6, [8679-44] S10
Goldstein, Michael 8679 Program
Committee, 8679 S6 Session Chair,[8679-42] S9Gong, Ying [8683-20] S5
Good, F. [8685-12] S4Goodwin, Frank 8679 Program
Committee, 8679 S4 Session Chair,[8679-14] S4, [8679-16] S4, [8679-48]
S10, [8679-59] SPS1, [8679-62] SPS1
Goossens, Ronald J. G. [8683-31] S7Gosselin, David [8680-10] S3Gotlinsky, Barry [8682-75] SPS5
Goto, Takahiro [8679-4] S1Gouraud, Pascal [8681-26] S7Gourgon, Cecile [8683-38] S8Granik, Yuri 8683 Program Committee,
8683 S11 Session Chair, [8683-18] S4Grantham, Katie [8682-76] SPS5
Grantham, Steven [8679-71] SPS1
Gräupner, Paul [8679-40] S9, [8679-57]
SPS1, [8679-61] SPS1
Graves, Trey [8679-70] SPS1, [8682-2]
S1
Green, Patrick [8679-37] S8Grenouillet, Laurent [8682-28] S8Gronheid, Roel [8679-111] SPS1, [867919] S5, [8679-95] SPS1, [8680-20] S6,[8680-20] S8, [8680-53] S13, [8680-64]
SPS1, [8681-67] SPS1, 8682 Program
Committee, 8682 S9 Session Chair,[8682-10] S2, [8682-10] S3, [8682-20]
S4, [8682-20] S6
Gronlund, Keith D. [8679-31] S7
Gross, Erich R. [8683-62] SPS1, [868371] SPS1
Groves, Timothy R. 8680 Program
Committee
Gu, Feifei [8681-114] SPS2
Gu, Xiaodan [8685-23] SPS
Gubiotti, Thomas [8680-16] S5, [8680-77]
SPS2
Guerrero, Douglas [8680-61] SPS1, 8682
Program Committee, 8682 S7 Session
Chair, [8682-34] S9, [8685-26] SPS
Guglielma, Vecchio [8685-24] SPS
Guillorn, Michael A. [8680-32] S4, [868032] S9, [8683-3] S2, [8685-19] S6Guliyev, Elshad [8680-42] S11, [8680-44]
S11
Gullikson, Eric M. [8679-28] S6, [8679-42]
S9, [8679-57] SPS1#SPIELitho

Guo, Chunfeng [8682-68] SPS3
Guo, Eric G. [8681-60] SPS1, [8684-25]
S8
Guo, Wei [8683-19] S5
Gupta, Mukul [8681-11] S3Gupta, Puneet [8681-11] S3Gustafson, Deborah S. [8679-87] SPS1
Gutsch, Manuela S. [8680-46] S12,[8682-34] S9

HHa, Naya [8684-23] S8
Ha, Soon Mok [8681-55] S14
Haass, Moritz [8685-17] S5Hadziioannou, Georges [8680-37] S10,[8680-5] S2
Haj Ibrahim, Bicher [8681-39] S11
Halle, Scott D. [8679-18] S4Ham, Boo Hyun [8681-55] S14
Hamieh, Bassem [8683-19] S5
Hamouda, Ayman [8683-19] S5Han, Jinkyu [8681-80] SPS1, [8681-91]
SPS1
Han, JoonHee [8679-108] SPS1
Han, Sang-In [8679-78] SPS1
Hand, Sean [8681-100] SPS1, [8681-36]
S10
Hansen, Terje [8685-5] S2, [8685-7] S2
Hanson, Cynthia 8680 Program
Committee, 8680 S5 Session Chair
Hao, Qingshan [8679-112] SPS1
Hara, Arisa [8682-11] S4, [8682-3] S2,[8682-49] SPS1, [8682-51] SPS1,[8683-4] S2, [8685-20] S6Harada, Minoru [8681-64] SPS1
Harb, Mohammed [8683-77] SPS1
Hardy, Ricky [8682-68] SPS3
Harned, Noreen [8679-50] S11
Harris-Jones, Jenah [8679-16] S4, [867945] S10, [8679-47] S10, [8679-59]
SPS1, [8679-62] SPS1
Hartig, Carsten [8681-12] S4, [8681-2]
S2, [8681-7] S3Hartley, John G. [8679-63] SPS1, [868024] S7
Hartmann, Peter [8683-88] SPS1Harukawa, Ryota [8680-20] S6, [8680-20]
S8, [8681-76] SPS1
Harumoto, Masahiko [8679-104] SPS1
Hasegawa, Norio [8681-108] SPS1
Hashimoto, Koji [8681-54] S14
Hashimoto, Takaki [8683-23] S5, [8683-8]
S3
Hashimoto, Yukio [8680-64] SPS1
Hassanein, Ahmed [8679-10] S3, [867991] SPS1
Hässler-Grohne, Wolfgang [8681-50] S13
Hassmann, Jens [8683-57] SPS1

57

Index of Authors, Chairs, and Committee Members
Bold = SPIE Corporate Member

Hatakeyama, Masahiro [8679-64] SPS1
Hattori, Shigeki [8680-59] SPS1
Hausotte, Tino [8681-116] SPS2
Haviland, Mary [8683-52] S12
Hayashi, Naoya 8679 Program
Committee, 8679 S4 Session Chair,[8680-2] S1
He, Chaobin [8682-83] SPS3
He, Yan-Ying [8681-66] SPS1
He, Yuan [8683-31] S7Heath, William H. [8682-30] S8Heinisch, Josef [8683-83] SPS1
Hellebrekers, Paul [8680-31] S8Heller, Marcel [8683-35] S8, [8683-59]
SPS1
Heller, Michael [8682-37] S4Hellin, David [8685-10] S3Henderson, Clifford L. 8681 S5 Session
Chair, 8682 Program Committee, 8682
S5 Session Chair, [8682-69] SPS4,[8682-81] SPS3, [8682-82] SPS3
Hendrickx, Eric [8679-100] SPS1, [8679102] SPS1
Henke, Wolfgang [8681-91] SPS1
Heo, Jin-Seok [8681-80] SPS1, [8681-91]
SPS1
Heo, Sujeong [8682-24] S7
Her, YoungJun [8680-64] SPS1
Hermans, Jan V. [8679-100] SPS1, [867955] S11, [8683-5] S2Hernandez, Abelardo Ramirez [8680-13]
S4, [8680-13] S6Hernandez-Charpak, Jorge N. [8681-22]
S6
Herr, Daniel J. C. 8680 Program
Committee, 8681 Program Committee
Herrick, Matthew T. [8682-13] S4Hesse, Anne [8679-72] SPS1
Hetzer, David R. [8680-51] S13, [8680-52]
S13, [8682-14] S4, [8682-50] SPS1
Heyne, Markus [8685-14] S4Hibino, Daisuke [8681-10] S3
Hieda, Hiroyuki [8680-66] SPS1
Hieno, Atsushi [8680-59] SPS1
Higashibata, Satomi [8681-54] S14
Higashiki, Tatsuhiko 8680 Program
Committee, 8680 S3 Session Chair
Higgins, Craig D. [8679-30] S7, [8682-23]
S7
Hill, Shannon B. [8679-19] S5, [8679-22]
S5, [8679-71] SPS1
Hinnen, Paul C. [8681-53] S14, [8683-25]
S6, [8683-54] S12
Hino, Toshio [8680-75] SPS2
Hinsberg, William D. [8682-44] S11
Hirai, Shin-Ichiro [8683-50] S12
Hirano, Ryoichi [8679-64] SPS1, [867966] SPS1
Hirano, Shuuji [8682-40] S10
Hirayama, Taku [8679-102] SPS1
Hirayama, Toru [8683-53] S1258

Hirayanagi, Noriyuki [8683-12] S3, [868322] S5Hishiro, Yoshi [8680-58] SPS1, [8682-1]
S1, [8682-15] S4, [8682-38] S10,[8682-44] S11
Ho, Bang-Ching [8679-39] S8, [8682-4]
S2, [8682-9] S2, [8682-9] S3
Hockey, Mary Ann J. [8680-61] SPS1
Hody, Hubert [8685-24] SPS
Hofer, Manuel [8680-42] S11, [8680-44]
S11, [8680-45] S11
Hoffmann, Kay [8679-12] S3
Hofmann, Uli [8680-78] SPS2
Hohle, Christoph K. [8680-46] S12, 8682
Program Committee, 8682 S4 Session
Chair, [8682-34] S9, [8685-30] SPS
Hojeij, Mohamad [8679-35] S8
Hojo, Yutaka [8681-88] SPS1
Holfeld, Christian [8681-113] SPS1
Holfeld, Georg [8683-35] S8Holmes, Justin D. [8680-60] SPS1
Holmes, Steven J. [8680-32] S4, [868032] S9, [8680-52] S13, [8682-28] S8Hong, Seongchul [8679-79] SPS1
Hong, Sung Ju [8680-83] SPS4
Hong, SungEun [8680-15] S4, [8680-15]
S6, [8680-30] S8Hoogeboom-Pot, Kathleen [8681-22] S6
Hoppe, Wolfgang [8683-43] S10, [868343] S6Horiguchi, Naoto [8679-107] SPS1
Horikawa, Junichi [8679-26] S6Horita, Yuji [8682-70] SPS4
Horne, Stephen F. [8679-87] SPS1
Horspool, David [8681-6] S2
Hoshiko, Kenji [8679-34] S8, [8679-95]
SPS1
Hoshino, Hiromi [8680-75] SPS2
Hou, Xun [8680-68] SPS2
House, Matthew [8679-62] SPS1
Hoyle, Philip C. [8680-24] S7
Hsiang, Chingyun [8681-60] SPS1
Hsieh, Y. Lawrence [8681-79] SPS1
Hsu, Chun-Wei [8681-79] SPS1
Hsu, H. K. Single [8681-79] SPS1
Hsu, Matthew [8681-43] S11
Hsu, Ming-yi [8681-10] S3
Hsu, Simon C. C. [8681-43] S11
Hsu, Stephen D. [8683-46] S11
Hsu, Yautzong E. [8680-28] S8Hsuan, Chung-Te [8683-73] SPS1
Hu, Cheming [8683-73] SPS1
Hu, Jiangtao [8681-107] SPS1, [8681-27]
S7, [8681-28] S7Hu, Jiarui [8681-10] S3
Hu, Owen [8685-11] S3Hu, Peter [8679-29] S7, [8681-109] SPS1
Hu, Rui [8679-109] SPS1
Hu, Shuiqing [8679-45] S10, [8679-47]
S10, [8681-100] SPS1
Hu, Xiang [8682-13] S4Hu, Yan [8681-100] SPS1

Huang, Chain Ting [8683-78] SPS1
Huang, Chien-Jen Eros [8681-97] SPS1
Huang, Chih-Hao [8682-60] SPS2
Huang, Chin-Chou Kevin [8681-56] S14,
[8681-87] SPS1, [8681-92] SPS1
Huang, Climbing [8681-79] SPS1
Huang, Eros [8681-43] S11
Huang, George Kuo Chun [8681-43] S11,
[8681-69] SPS1
Huang, Hsu-Ting [8679-32] S7
Huang, Huijie [8683-80] SPS1, [8683-87]
SPS1
Huang, Luis [8681-43] S11
Huang, Ren Peng [8681-79] SPS1
Huang, Ru [8684-6] S2
Huang, Wen-Chun [8681-66] SPS1
Huang, Wu-Song [8682-28] S8Huang, Yi [8681-68] SPS1, [8681-77]
SPS1
Huang, Yu-Hao [8681-97] SPS1
Hubing, Du [8681-114] SPS2, [8681-117]
SPS2
Hudson, Eric A. 8685 Program
Committee
Hudyma, Russell [8679-42] S9
Huffman, Craig [8681-32] S9Hurley, Paul [8683-44] S10, [8683-44] S6
Hüser-Espig, Dorothee [8681-50] S13
Hustad, Phillip D. [8680-14] S4, [8680-14]
S6, [8680-7] S2
Huwang, Wenjin [8683-60] SPS1
Hwang, Chan [8681-80] SPS1, [8681-91]
SPS1
Hwang, Kyungbae [8681-92] SPS1
Hwang, Seung-Hyun [8679-54] S11
Hwang, Wontae [8682-13] S4Hyun, Yoonsuk [8679-15] S4

I
Icard, Béatrice [8680-26] S7Ichikawa, Hirotaka [8684-10] S3Ichikawa, Takumi [8682-57] SPS2, [868264] SPS3
Iida, Susumu [8679-64] SPS1, [8679-66]
SPS1
Iizuka, Tetsuya [8680-75] SPS2
Ikeda, Junji [8683-9] S3Ikeda, Makoto [8680-75] SPS2
Ikegami, Naokatsu [8680-17] S5Ikegami, Toru [8681-108] SPS1
Ikeno, Rimon [8680-75] SPS2
Inoue, Jiro [8679-98] SPS1
Inoue, Naoki [8679-4] S1, [8682-43] S11
Inoue, Osamu [8681-42] S11, [8681-43]
S11, [8681-47] S12, [8681-49] S13,
[8681-70] SPS1
Inoue, Soichi 8679 Program Committee,
8679 S5 Session Chair, [8679-17] S4,

SPIE Advanced Lithography 2013·[8679-21] S5, [8679-85] SPS1
Iqbal, Salman [8682-23] S7Irmer, Bernd [8681-86] SPS1
Isago, Susumu [8683-53] S12
Isawa, Miki [8681-67] SPS1
Isbester, Paul K. [8681-2] S2Ishida, Yoshihito [8680-13] S4, [8680-13]
S6Ishihara, Sunao [8680-65] SPS1
Ishii, Maki [8682-41] S10
Ishiyama, Satoshi [8683-53] S12
Isoyan, Artak [8683-30] S7
Itani, Toshiro [8679-38] S8, [8679-82]
SPS1, [8682-17] S5, [8682-21] S7
Ito, Masaru [8680-75] SPS2
Itoh, Hiroshi [8681-45] S12
Ityaksov, Dimitry [8681-72] SPS1
Itzkovich, Tal [8681-43] S11
Ivanov, Tzvetan [8680-42] S11, [8680-44]
S11
Iwaki, Hiroyuki [8682-19] S4, [8682-19]
S6
Iwase, Taku [8680-21] S6, [8680-21] S8,[8685-28] SPS
Iwashita, Jun [8679-102] SPS1
Izumi, Hiro [8683-22] S5JJack, Kevin S. [8680-8] S2Jackson, Carol [8683-62] SPS1
Jager, Remco J. A. [8680-23] S7
Jain, Vipul [8679-37] S8, [8679-6] S2,[8679-6] S3, [8682-39] S10
Jain, Vivek [8683-31] S7Jamieson, Andrew T. [8682-33] S9Jang, Il Yong [8679-16] S4Jang, Jongwon [8683-65] SPS1
Janssen, Jochem [8681-72] SPS1
Jarnagin, Nathan D. [8682-69] SPS4,[8682-81] SPS3
Jau, Jack Y. [8679-18] S4Jawandha, Harshdeep [8684-8] S3Jayaram, Srividya [8683-17] S4Jazim, Mohamed Fazly Mohamed [868156] S14
Jedamzik, Ralf [8683-88] SPS1
Jeon, Bumhwan [8681-63] SPS1, [868223] S7, [8683-70] SPS1
Jeon, Chan-Uk [8679-2] S1, [8683-21] S5Jeon, Jinhyuck [8684-17] S10, [8684-17]
S6
Jeong, SangSup [8685-16] S5Jeong, Seejun [8679-79] SPS1
Jessen, Scott W. 8682 Program
Committee, 8682 S11 Session Chair
Jia, Xin [8683-86] SPS1
Jiang, Hao [8681-119] SPS2
Jiang, Jing [8682-58] SPS2

www.spie.org/al

Jiang, Jiong [8683-46] S11
Jiang, Rui [8683-58] SPS1, [8683-62]
SPS1, [8683-71] SPS1
Jiang, Ximan [8681-14] S4Jin, Frank [8681-94] SPS1
Jin, Gyoyoung
Jindal, Vibhu [8679-114] SPS1, [867916] S4, [8679-28] S6, [8679-48] S10,[8679-59] SPS1, [8679-62] SPS1
Jinnai, Hiroshi [8680-6] S2
Jo, Ahjin [8681-51] S13
Johnson, A.T. Charlie [8680-83] SPS4
Jonckheere, Rik [8679-33] S7Jonkers, Jeroen [8679-8] S3Joo, Hyunsang [8679-108] SPS1
Joseph, Eric A. [8680-32] S4, [8680-32]
S9, [8685-19] S6, [8685-8] S3Joshi, Ravi [8682-45] S11
Joubert, Olivier P. [8685-17] S5Jung, Byungki [8682-58] SPS2
Jussot, Julien [8680-26] S7K
Kadaksham, Arun John [8679-14] S4,[8679-48] S10, [8679-59] SPS1, [867962] SPS1, [8679-84] SPS1
Kaestner, Marcus [8680-42] S11, [868044] S11, [8680-45] S11
Kahlenberg, Frank [8683-49] S11
Kahng, Andrew B. [8684-21] S7
Kai, Yasunobu [8683-23] S5, [8683-8] S3Kaiser, Dieter [8683-35] S8, [8683-59]
SPS1
Kaiser, Norbert [8679-12] S3Kaiser, Winfried M. [8679-40] S9, [867952] S11
Kakizaki, Kouji [8683-51] S12
Kalk, Franklin D. [8683-6] S2Kallingal, Chidam [8683-67] SPS1
Kamata, Yoshiyuki [8680-66] SPS1
Kamineni, Vimal Kumar [8681-21] S6Kanamaru, Masahiro [8680-66] SPS1
Kandel, Yudhishthir P. [8679-113] SPS1,[8679-7] S2, [8679-7] S3Kaneyama, Koji [8679-104] SPS1
Kang, Charles [8681-2] S2Kang, Choon-Ky [8679-54] S11
Kang, Chunsoo [8683-15] S4Kang, Daekeun [8680-36] S10
Kang, Ho-Kyu [8680-36] S10, [8683-11]
S3Kang, Hyosang [8679-54] S11
Kang, In-Yong [8683-21] S5Kang, Jae-Hyun [8684-23] S8Kang, Weiling [8683-34] S8, [8684-14] S5,[8684-14] S9, [8684-15] S5, [8684-15]
S9, [8684-18] S7Kang, Youngseog [8683-60] SPS1

Index of Authors, Chairs, and Committee Members
Kanno, Masahiro [8680-55] SPS1
Kapteyn, Henry C. [8681-17] S4, [868122] S6Karanikas, Christos [8682-23] S7, [868272] SPS5
Karur-Shanmugam, Ramkumar [8681-87]
SPS1, [8681-92] SPS1
Kashiwakura, Miki [8682-64] SPS3
Kasica, Richard [8682-36] S9Kasprowicz, Bryan S. 8679 Program
Committee
Katayama, Kazuhiro [8679-21] S5, [867985] SPS1
Katayama, Tomohide [8681-103] SPS1
Kato, Hirokazu [8680-55] SPS1
Kato, Keisuke [8682-62] SPS3
Kato, Takeshi [8681-42] S11, [8681-43]
S11, [8681-70] SPS1
Kato, Yoshimitsu [8681-54] S14
Katoh, Takenori [8681-113] SPS1
Kattouw, Hans [8681-91] SPS1
Kawabata, Yuichi [8683-10] S3Kawada, Hiroki [8681-108] SPS1, [868119] S5, [8681-47] S12, [8681-49] S13,
[8681-70] SPS1
Kawagishi, Masahiro [8679-58] SPS1
Kawai, Yoshio 8682 Program Committee,
8682 S10 Session Chair
Kawakami, Shinichiro [8681-76] SPS1
Kawakami, Takanori [8679-34] S8Kawamoto, Akiko [8681-29] S6, [8681-29]
S8, [8681-30] S6, [8681-30] S8Kawanishi, Ayako [8680-55] SPS1
Kawasaki, Naohiko [8682-52] SPS2
Kawasaki, Takahiro [8681-47] S12
Kawata, Jun [8681-58] SPS1
Kazinczi, Robert [8679-50] S11
Kazuhiro, Hamamoto [8679-26] S6Kazumi, Hideyuki [8681-61] SPS1
Ke, Chih-Ming [8681-10] S3
Ke, Chih-Ming 8681 Program
Committee, 8681 S13 Session Chair,[8681-3] S2
Kea, Marc [8681-91] SPS1
Kearney, Patrick A. [8679-48] S10, [867959] SPS1, [8679-62] SPS1
Keitel, Barbara [8679-73] SPS1
Keller, Nick [8681-96] SPS1
Keller, Wolfgang [8681-106] SPS1
Kempsell Sears, Monica [8683-16] S4Kennon, Jame [8679-42] S9Kercher, Dan S. [8685-21] S6Kestner, Robert [8679-42] S9Khanna, Puneet [8685-11] S3Khopkar, Yashdeep [8679-114] SPS1
Khurana, Ranjan [8681-106] SPS1
Kiani, Amirkianoosh [8680-71] SPS2
Kiani, Sara [8681-23] S6, [8682-22] S7
Kidd, Brian W. [8682-75] SPS5
Kidwingira, Francoise [8680-16] S5

Kiehlbauch, M. [8685-12] S4Kievit, Olaf [8681-72] SPS1
Kihara, Naoko [8680-66] SPS1
Kikitsu, Akira [8680-66] SPS1
Kikuchi, Takahisa [8683-26] S6Kikuchi, Yukiko [8679-21] S5, [8679-82]
SPS1, [8679-85] SPS1
Kim, Bongkeun [8680-39] S10, [8680-41]
S10Kim, Byeongsoo [8681-55] S14
Kim, Byung-Gook [8683-21] S5
Kim, Byung-Moo [8684-23] S8Kim, Dooh [8685-29] SPS
Kim, Eun Sung [8680-36] S10
Kim, Eun-Jin [8679-105] SPS1
Kim, Haeryung [8683-32] S7
Kim, Hong-Ik [8679-54] S11
Kim, Hyang Kyun Helen [8681-2] S2Kim, HyeonSoo [8685-29] SPS
Kim, Inseon [8679-105] SPS1
Kim, Insung [8681-37] S10
Kim, Jahee [8682-24] S7
Kim, Jeahyun
Kim, Jeong Soo [8682-72] SPS5
Kim, Ji Won [8679-105] SPS1
Kim, Jin-Woong [8685-29] SPS
Kim, Jongseok [8679-79] SPS1
Kim, Jungchan [8683-15] S4Kim, Kee Sup [8684-23] S8Kim, Kyoungseon [8680-36] S10
Kim, Sang-Hyun [8679-2] S1
Kim, Seong-Sue 8679 Program
Committee, 8679 S11 Session Chair,[8679-2] S1, [8679-57] SPS1
Kim, Shinyoung [8684-17] S10, [8684-17]
S6
Kim, Sung [8685-11] S3Kim, Sungsu [8681-64] SPS1
Kim, Taegeun [8679-2] S1
Kim, Taehui [8681-64] SPS1
Kim, Tae-Sun [8682-24] S7
Kim, Won D. [8681-53] S14
Kim, Young Ki [8681-62] SPS1, [8681-93]
SPS1
Kim, Yura [8682-24] S7
Kimura, Taiki [8683-23] S5
Kimura, Tooru [8679-34] S8, [8682-1] S1,[8682-38] S10, [8682-52] SPS2
Kimura, Yoshie [8685-10] S3King, Brian [8683-58] SPS1, [8683-62]
SPS1, [8683-71] SPS1
King, Sean W. [8681-22] S6
Kini, Sumanth [8681-94] SPS1
Kit, Koh Kar [8683-43] S10, [8683-43] S6
Kita, Naonori [8683-12] S3, [8683-24] S5,[8683-29] S7
Kitagawa, Ryota [8680-59] SPS1
Kitano, Takahiro [8680-38] SPS1, [868176] SPS1, [8682-19] S4, [8682-19] S6Klaus, David P. [8685-19] S6Klein, Christof [8680-19] S5

Klein, Dana [8681-84] SPS1, [8681-87]
SPS1
Klikovits, Jan [8680-78] SPS2
Kline, R. Joseph [8680-22] S6, [8680-22]
S8, [8681-20] S6, [8681-25] S7, [868144] S12
Klostermann, Ulrich K. [8679-97] SPS1,[8683-49] S11
Klymko, Paul [8682-74] SPS5
Koay, Chiew-Seng [8682-14] S4
Kobayashi, Katsutoshi [8680-55] SPS1
Kobayashi, Sachiko 8683 Program
Committee, 8683 S4 Session Chair
Kobrin, Boris [8680-29] S8Kodama, Chikaaki [8684-10] S3
Kodera, Katsuyoshi [8680-40] S10, [868055] SPS1, [8683-10] S3Koh, Huipeng [8682-23] S7, [8683-61]
SPS1
Koizumi, Ichiro [8683-50] S12
Kojima, Akira [8680-17] S5
Kojima, Shinichi [8680-77] SPS2
Kojima, Yoshinori [8680-73] SPS2, [868075] SPS2
Kokkoris, George [8685-4] S2
Komatsu, Satoshi [8680-75] SPS2
Kometani, Reo [8680-65] SPS1
Komine, Nobuhiro [8681-54] S14
Kon, Jun-ichi [8680-73] SPS2
Kondoh, Takafumi [8682-45] S11
Konishi, Junko [8679-58] SPS1
Konno, Mitsuru [8681-49] S13
Kono, Takuya [8683-29] S7
Kono, Yuko [8683-23] S5
Kool, Ron [8679-50] S11
Koshelev, Konstantin [8679-110] SPS1
Koshida, Nobuyoshi [8680-17] S5
Koshihara, Shunsuke 8681 Program
Committee, 8681 S3 Session Chair
Kosmala, Barbara [8680-60] SPS1
Koster, Norbert B. [8681-121] SPS1
Kosugi, Hitoshi [8679-100] SPS1, [868176] SPS1
Kosugi, Junichi [8683-55] S12
Kotani, Toshiya [8683-23] S5, [8683-8]
S3, [8684-10] S3
Kozawa, Takahiro [8679-38] S8, [868247] S11, [8682-64] SPS3
Kramer, John W. [8680-14] S4, [8680-14]
S6
Krishnamurthy, Vandana [8685-26] SPSKritsun, Oleg [8679-28] S6, [8681-27] S7,[8681-28] S7Krivtsun, Vladimir M. [8679-110] SPS1
Krysak, Marie E. [8679-5] S2, [8679-5]
S3, [8682-26] S7
Ku, Tzu-Kun [8682-35] S9, [8683-36] S8,[8685-27] SPS
Ku, Yao-Ching [8682-78] SPS3
Ku, Yi-Sha 8681 Program Committee
Kuan, Chiyan [8679-18] S4+1 360 676 3290

· help@spie.org·

Kubis, Michael [8683-25] S6, [8683-54]
S12
Kudo, Shintaro [8683-9] S3
Kuechler, Bernd [8683-43] S10, [8683-43]
S6, [8683-49] S11
Kuepper, Felix [8679-8] S3
Kuerz, Peter [8679-50] S11, [8679-52]
S11
Kulshreshtha, Prashant K. [8681-23] S6,[8682-22] S7Kumar, Pragati [8681-72] SPS1
Kumazaki, Takahito [8683-51] S12
Kuo, David S. [8680-28] S8Kuo, Kelly Tzu Lin [8681-43] S11
Kuo, Tung-Chang [8681-59] SPS1
Kuo, Wan-Lin [8682-12] SPS2
Kurihara, Masaru [8680-21] S6, [8680-21]
S8, [8685-28] SPS
Kurosawa, Tsuyoshi [8680-62] SPS1
Kurosu, Akihiko [8683-51] S12
Kurth, Karin [8683-61] SPS1
Kurt-Karsilayan, Nur [8684-22] S7
Kushibiki, Jun-ichi [8679-58] SPS1,[8679-86] SPS1
Kusunose, Haruhiko [8679-17] S4
Kuwahara, Yuhei [8682-50] SPS1
Kwak, Noh-Jung [8679-54] S11
Kwan, Joe [8684-23] S8
Kwon, Gwangmin [8681-64] SPS1
Kwon, HyungJoon [8685-16] S5Kwong, Ranee [8682-28] S8Kye, Jongwook 8683 Program
Committee, 8683 S2 Session ChairL
La Fontaine, Bruno 8679 Program
Committee, [8679-12] S3, [8679-51]
S11, [8679-89] SPS1
Laachi, Nabil [8680-39] S10, [8680-41]
S10
LaBeaume, Paul [8682-39] S10
Labelle, Catherine B. 8685 Program
Committee, 8685 S1 Session Chair
LaBrake, Dwayne L. [8680-11] S3, [868031] S8
LaCour, Pat J. [8683-17] S4, [8683-20]
S5Lafferty, Neal V. [8683-3] S2
Lai, Kafai [8680-32] S4, [8680-32] S9,
8683 Conference CoChair, 8683 S1
Session Chair, 8683 S10 Session
Chair, [8683-3] S2, 8684 S6 Session
Chair, [8684-12] S4, [8684-12] S9Laidler, David [8679-55] S11, [8683-27]
S6, [8683-5] S2Lalovic, Ivan [8683-28] S6Lam, David K. [8680-70] SPS2
Lam, Michael [8683-48] S11#SPIELitho

Lan Liu, Xing [8681-4] S2
Lan, Song [8683-39] S8Landie, Guillaume [8683-41] S5, [868341] S9Larson, Scott [8683-31] S7
Lash, Alexander A. [8679-110] SPS1
Latorre-Garrido, Victor [8682-31] S8
Lattard, Ludovic [8680-50] S12
Latypov, Azat M. [8680-34] S4, [8680-34]
S9, [8680-56] S10, [8680-57] SPS1
Laubis, Christian [8679-72] SPS1
Lauer, Isaac [8685-19] S6Lawliss, Mark [8679-53] S11
Lawson, Richard A. [8682-81] SPS3,[8682-82] SPS3
Lazier, Harry [8681-32] S9
Le Denmat, Jean-Christophe [8683-18]
S4, [8683-39] S8Lebon, Hans [8679-107] SPS1
LeClaire, Jeff [8679-53] S11
Lee, Byoung-Ho 8681 Program
Committee, 8681 S10 Session Chair
Lee, Byoung-Hoon [8681-92] SPS1
Lee, Chahn [8681-61] SPS1
Lee, Chien-Fu [8683-40] S5, [8683-40] S9Lee, Chien-Hsien Sam [8682-13] S4
Lee, Evan [8684-23] S8
Lee, Ho-Hyuk [8679-54] S11
Lee, Inhwan [8681-92] SPS1
Lee, Jae Uk [8679-79] SPS1
Lee, Jeffrey [8681-99] SPS1
Lee, Jeong In [8680-13] S4, [8680-13] S6
Lee, Jeonkyu [8683-15] S4
Lee, Jin-Ho [8680-79] SPS3
Lee, Jongsu [8679-15] S4
Lee, JungYoul [8685-29] SPS
Lee, Kim Y. [8680-28] S8Lee, Myeongdong
Lee, Nae-Eung 8685 Program
Committee, 8685 S4 Session Chair
Lee, Rae Won [8683-21] S5
Lee, Sangmin [8685-16] S5
Lee, Seung Min [8679-79] SPS1
Lee, Shawn Hyun-Woo [8681-91] SPS1
Lee, Sukjoo 8683 Program Committee,
8683 S8 Session Chair
Lee, Sung-Woo [8683-15] S4
Lee, Su-Young [8679-2] S1
Lee, Taehyeong [8683-15] S4
Lee, Tzu-Lih [8679-23] S5
Lee, YongHa Paul [8681-46] S12, [86815] S2, [8681-51] S13
Leewis, Christian [8681-53] S14
Lefebvre, Pierre [8681-14] S4
LeGratiet, Bertrand [8681-26] S7, [86814] S2, [8681-52] S14
Lemaillet, Paul [8681-25] S7Leray, Philippe J. [8679-55] S11, [868327] S6, [8683-5] S2Lercel, Michael J. 8679 Program
Committee, 8679 S3 Session Chair

59

Index of Authors, Chairs, and Committee Members
Bold = SPIE Corporate Member

Leschok, Andre [8683-57] SPS1, [868361] SPS1
Levi, Shimon [8681-110] SPS1, [8681-48]
S12, [8681-7] S3Levinson, Harry J. Symposium Chair,
Symposium Committee, [8679-41] S9,[8679-97] SPS1
Li, Ang [8682-37] S4
Li, Bing [8681-114] SPS2, [8681-117]
SPS2
Li, Jia-Han [8681-115] SPS2
Li, Jie [8681-107] SPS1, [8681-27] S7,[8681-28] S7
Li, Ling [8681-60] SPS1
Li, Mingqi [8682-68] SPS3
Li, Shayu [8679-109] SPS1
Li, Shuxin [8681-85] SPS1
Li, Sikun [8683-63] SPS1
Li, Tongbao [8681-118] SPS2, [8681-71]
SPS1
Li, Wendy [8681-68] SPS1
Li, Wenhui [8681-77] SPS1
Li, Yanqiu [8679-74] SPS1
Li, Yi [8679-112] SPS1
Li, Ying [8679-29] S7
Li, Yong [8683-7] S2
Li, Zhiqiang [8681-24] S6
Liang, Ted 8679 Program Committee,
8679 S9 Session Chair
Liao, Zhijie [8683-86] SPS1
Libera, Joseph A. [8680-4] S2
Liddle, James Alexander 8680 Program
Committee
Liebmann, Lars W. 8680 S9 Session
Chair, [8680-32] S4, [8680-32]
S9, [8683-1] S1, 8684 Program
Committee, 8684 S2 Session Chair,
8684 S4 Session Chair, [8684-12] S4,[8684-12] S9Light, Scott L. [8683-31] S7Lille, Jeffery [8685-21] S6Lim, Chin-Teong [8683-61] SPS1
Lim, Hee-Youl [8679-54] S11
Lin, Burn J. Symposium Committee,[8679-56] SPS1, [8680-48] S12, [868166] SPS1, [8683-40] S5, [8683-40] S9Lin, C. C. [8679-45] S10
Lin, Chia Hua [8682-60] SPS2
Lin, Chia Hung [8682-68] SPS3
Lin, Chia-Chi [8682-12] SPS2
Lin, Chih Hsun [8681-79] SPS1
Lin, Ching-Hung Bert [8681-97] SPS1
Lin, Chua [8681-92] SPS1
Lin, Guanyang [8680-15] S4, [8680-15]
S6, [8680-30] S8, [8680-53] S13
Lin, J. F. [8681-10] S3
Lin, Jun-Jin [8681-97] SPS1
Lin, Kuan [8681-94] SPS1
Lin, Pei-Chun [8683-66] SPS1
Lin, Qin [8685-26] SPS
Lin, Qinghuang 8682 Program
Committee, 8685 Conference CoChair

60

Lin, Shy-Jay 8680 Program Committee,
8680 S7 Session Chair, [8680-16] S5,[8680-48] S12
Lin, Tim [8681-30] S6, [8681-30] S8Lin, Timothy [8683-6] S2
Lin, Tingsheng [8681-29] S6, [8681-29]
S8
Lin, Welch [8681-79] SPS1
Lin, Wumei [8683-86] SPS1
Lin, Yi Shih Alien [8681-68] SPS1, [868177] SPS1
Lin, You Yu [8682-48] SPS1
Lin, Yu Min [8681-79] SPS1
Ling, Moh-Lung [8681-107] SPS1
Linnane, Michael [8682-74] SPS5
Litchenberg, Gerald [8683-62] SPS1
Litt, Lloyd C. 8680 Program Committee
Liu, Anwei [8679-32] S7
Liu, Bin [8681-107] SPS1
Liu, Chi-Chun [8680-32] S4, [8680-32]
S9, [8680-52] S13, [8683-3] S2
Liu, Enden D. [8680-70] SPS2
Liu, Fei [8679-74] SPS1
Liu, Huikan [8683-19] S5
Liu, Jian [8683-67] SPS1
Liu, Juan [8682-67] SPS3
Liu, Kent [8681-79] SPS1
Liu, Lian Cong [8682-68] SPS3
Liu, Pei-Yi [8680-48] S12
Liu, Peng [8679-31] S7
Liu, Qigwei [8684-25] S8
Liu, Qing [8682-28] S8Liu, Renzhi [8684-12] S4, [8684-12] S9Liu, Ru-Gun [8681-66] SPS1, [8683-40]
S5, [8683-40] S9Liu, Sen [8682-28] S8Liu, Shiyuan [8681-119] SPS2, [8683-75]
SPS1
Liu, Suwen [8681-95] SPS1
Liu, Wei [8679-31] S7
Liu, Weijun [8680-11] S3Liu, Yongdong [8681-107] SPS1
Liu, Zhuan [8681-28] S7Liu, Zuwei [8685-23] SPS
Lo, Chiung Yu [8682-35] S9Lo, Fred [8683-73] SPS1
Lo, Wei-Cyuan [8683-69] SPS1
Locorotondo, Sabrina [8685-24] SPS
Loebeth, Steffen [8681-113] SPS1
Loeschner, Hans 8680 Program
Committee, 8680 S7 Session Chair,[8680-19] S5
Lok, Sjoerd [8679-50] S11
Lokasani, Ragava [8679-19] S5Lorenzini, Elizabeth [8681-32] S9Lorusso, Gian Francesco [8679-102]
SPS1
Lowisch, Martin [8679-50] S11, [8679-52]
S11
Lu, Chih-Yuan [8682-60] SPS2, [8683-72]
SPS1, [8683-73] SPS1

Lu, Hailiang [8681-90] SPS1
Lu, Junwei [8684-25] S8
Lu, Maiying [8682-33] S9
Lu, Mark [8683-76] SPS1
Lu, Toh-Ming [8679-67] SPS1
Lu, Xiaoming [8680-11] S3Lu, Yen-Cheng [8679-56] SPS1
Lucas, Kevin [8683-15] S4, [8683-37] S8,[8683-7] S2Lucatorto, Thomas B. [8679-19] S5,[8679-22] S5, [8679-71] SPS1
Luciani, Vincent [8682-36] S9Ludwicki, Jonathan [8682-14] S4Luehrmann, Paul [8681-91] SPS1
Lukaszewicz, Mikolaj [8685-14] S4
Luk-Pat, Gerard [8683-37] S8, [8683-7]
S2
Luning, Scott [8682-28] S8Luo, Kang [8680-11] S3
Lv, Wen [8683-75] SPS1
Lyons, Adam [8679-63] SPS1

M
Ma, Andy [8679-62] SPS1, [8681-65]
SPS1
Ma, Rui [8681-118] SPS2
Ma, Seong-Min [8685-29] SPS
Ma, Tristan Y. [8682-5] S2
Ma, Yan [8681-118] SPS2, [8681-71]
SPS1
Maas, Diederik J. [8681-72] SPS1
MacDonald, Paul [8681-14] S4Macdougall, James B. [8679-44] S10
Mack, Chris A. Symposium Committee,[8681-35] S10, [8684-1] S1Madkour, Kareem [8684-23] S8, [868424] S8Maeda, Shimon [8680-40] S10, [8683-10]
S3Maeda, Shin-ichi [8682-62] SPS3
Maekawa, Kazuki [8682-57] SPS2
Maeng, Chang Ho [8685-11] S3Maher, Chris [8681-14] S4Maher, Michael J. [8680-6] S2Makino, Katsushi [8683-26] S6Makinoshima, Takashi [8682-66] SPS3
Mallik, Arindam [8679-107] SPS1
Maltabes, John G. 8680 Program
Committee, 8680 S8 Session Chair
Man, Naoki [8682-52] SPS2
Mane, Anil [8680-4] S2Mangat, Pawitter J. [8679-28] S6Mani, Antonio [8681-92] SPS1
Mann, Klaus [8679-73] SPS1
Manske, Eberhard [8680-44] S11, [8681116] SPS2Marchetti, Louis A. [8679-42] S9SPIE Advanced Lithography 2013·

Marcuccilli, Gino [8681-92] SPS1Marques-Hueso, Jose [8682-32] S8Martin, Patrick M. [8682-5] S2Martinez-Marco, Mariluz [8682-31] S8,[8682-32] S8Martinez-Pastor, Juan P. [8682-31] S8,[8682-32] S8Maruyama, Ken [8679-34] S8, [8681-23]
S6, [8682-22] S7, [8682-38] S10
Maruyama, Osamu [8679-26] S6Maruyama, Takashi [8680-75] SPS2
Maruyama, Yuko [8679-86] SPS1
Mason, Mark E. 8683 S9 Session Chair,
8684 Conference Chair, 8684 S1
Session Chair, 8684 S5 Session Chair
Masukawa, Kazuyuki [8683-23] S5,[8683-8] S3Matsui, Ryota [8683-12] S3, [8683-24]
S5, [8683-9] S3Matsuki, Kazuto [8681-29] S6, [8681-29]
S8, [8681-30] S6, [8681-30] S8Matsukuma, Masaaki [8680-38] SPS1
Matsumiya, Tasuku [8679-102] SPS1,[8680-62] SPS1
Matsunaga, Koichi [8679-100] SPS1
Matsunaga, Takashi [8683-51] S12
Matsuoka, Ryoichi [8681-88] SPS1
Matsuura, Yuriko [8682-41] S10
Matsuyama, Tomoyuki [8683-12] S3,[8683-22] S5, [8683-24] S5, [8683-29]
S7, [8683-47] S11, [8683-53] S12,[8683-9] S3Matsuzaki, Kazuyoshi [8680-38] SPS1
Matsuzawa, Nobuyuki N. 8682 Program
Committee, 8682 S2 Session Chair
Matyi, Richard [8681-20] S6Maurer, Wilhelm 8683 Program
Committee, 8683 S6 Session Chair
McClelland, Alexandra L. [8682-25] S7McClelland, Andrew [8680-24] S7
McCord, Mark A. [8680-48] S12
McGarvey, Steve A. [8681-98] SPS1,[8681-99] SPS1
McGinnis, A. [8685-12] S4McIntyre, Gregory R. [8679-43] S9,[8679-53] S11, [8679-94] SPS1, [868319] S5
McKenzie, Douglas S. [8682-27] S8McLellan, Erin [8681-12] S4McMackin, Ian [8680-29] S8Mead, Sarah [8679-84] SPS1
Medikonda, Manasa [8681-21] S6Mehta, Sohan Singh [8682-23] S7
Mei, Qiuli [8679-74] SPS1
Meijer, Henk [8679-3] S1, [8679-50] S11
Meiling, Hans [8679-50] S11
Meiring, Jason [8683-19] S5Melchior, John T. [8683-52] S12
Melvin, Lawrence S. [8683-30] S7
Melzig, Stephan [8681-113] SPS1
Menezes, Marlon [8680-31] S8Meng, Xiangwei [8680-68] SPS2

www.spie.org/alMercha, Abdelkarim [8679-107] SPS1
Merkus, Emile [8683-62] SPS1
Metzler, Dominik [8685-6] S2
Mey, Tobias [8679-73] SPS1
Meyer, Matthew M. [8682-42] S10
Miao, Liyan [8682-5] S2Michel, Jean-Christophe [8683-18] S4,[8683-39] S8Midoh, Yoshihiro [8680-47] S12
Mihardja, Lanny [8681-101] SPS1, [868197] SPS1
Miller, Michael L. [8680-31] S8
Milo, Renan [8681-30] S6, [8681-30] S8Miloslavsky, Alexander [8683-37] S8,[8683-7] S2Mimotogi, Akiko [8683-29] S7Mimotogi, Shoji [8680-40] S10, [8683-10]
S3, [8684-10] S3, [8685-2] S1Minegishi, Shin-ya [8680-58] SPS1,[8682-15] S4Minekawa, Yohei [8681-64] SPS1Mininni, Lars [8679-45] S10, [8679-47]
S10
Miqyass, Mohamed [8681-40] S11
Mitsuhashi, Hisashi [8680-12] S3Miura, Seiya [8683-50] S12
Miyagi, Ken [8680-62] SPS1
Miyagi, Makoto [8683-43] S10, [8683-43]
S6
Miyagi, Tadashi [8679-104] SPS1
Miyai, Hiroki [8679-17] S4Miyakawa, Ryan H. [8679-25] S6, [867957] SPS1
Miyake, Akira 8679 Program Committee
Miyamoto, Shinji [8684-10] S3Miyashita, Kenichiro [8680-62] SPS1
Miyazoe, Hiroyuki [8680-32] S4, [868032] S9, [8685-19] S6Mizoguchi, Hakaru [8679-9] S3, [868351] S12
Mizuno, Takeshi [8681-82] SPS1
Mizuno, Wataru [8682-70] SPS4
Mizuno, Yasushi [8683-12] S3, [8683-22]
S5
Mizutani, Masaki [8683-50] S12
Mochi, Iacopo [8679-28] S6, [8679-44]
S10
Mochic, Iacopo [8679-24] S6
Mochida, Kenji [8682-52] SPS2
Mohamed, Sarah [8684-23] S8Mojarad, Nassir M. [8679-35] S8, [867975] SPS1
Mokhberi, Ali [8679-32] S7, [8681-76]
SPS1
Montgomery, Cecilia [8679-113] SPS1,[8681-18] S5Montinaro, Enrica [8680-27] S8Moon, Euclid E. [8680-9] S3Moon, Seong-Ho [8681-55] S14
Moreau, David [8683-19] S5Moreau, Olivier [8681-14] S4Morgan, Paul [8681-109] SPS1

Index of Authors, Chairs, and Committee Members
Morgana, Nicolo [8683-35] S8Mori, Ichiro [8679-17] S4Mori, Ken-Ichiro [8683-50] S12
Mori, Masakazu [8683-12] S3Mori, Shinichi [8683-9] S3Moriizumi, Koichi [8681-112] SPS1,[8681-113] SPS1
Morimoto, Hiroaki 8679 Program
Committee
Morita, Akihiko [8679-104] SPS1
Morita, Masamichi [8680-12] S3Morris, Michael A. [8680-60] SPS1
Morrison, Pedro [8682-23] S7
Moschak, Pete [8681-32] S9Motokubota, Masaya [8683-10] S3
Mowll, Tyler [8679-84] SPS1
Mukundhan, Priya [8681-79] SPS1
Mülders, Thomas [8683-30] S7
Mulkens, Jan [8683-25] S6, [8683-54]
S12
Mullen, Salem [8682-27] S8, [8682-41]
S10
Mun, Daiyoung [8681-64] SPS1
Murachi, Tetsunori [8679-65] SPS1
Murakami, Gaku [8682-70] SPS4
Murakami, Katsuhiko 8679 Program
Committee, 8679 S6 Session Chair
Murakami, Takeshi [8679-64] SPS1
Muramatsu, Makato [8682-19] S4, [868219] S6Muramatsu, Makoto [8680-38] SPS1,[8681-76] SPS1
Murnane, Margaret M. [8681-17] S4,[8681-22] S6
Murray, Daniel J. [8680-14] S4, [8680-14]
S6
Murugesan Kupuswamy, Vijaya-Kumar[8679-111] SPS1
Muthinti, Gangadhara Raja [8681-21] S6Myers, David W. [8679-51] S11, [8679-89]
SPS1
Myneni, Satya [8681-96] SPS1N
Naaijkens, Geert-Jan [8683-89] SPS1
Nachtwein, Angelique [8683-38] S8Nafus, Kathleen [8679-100] SPS1, [868053] S13, [8680-64] SPS1, [8682-10]
S2, [8682-10] S3, [8682-19] S4, [868219] S6, [8682-20] S4, [8682-20] S6Nagahara, Seiji [8681-76] SPS1, [868219] S4, [8682-19] S6Nagai, Tomoki [8680-58] SPS1, [8682-1]
S1, [8682-15] S4Nagashima, Takayuki [8683-51] S12
Nagaswami, Venkat R. [8680-20] S6,[8680-20] S8, [8681-76] SPS1
Nainani, Aneesh [8684-19] S7Nakajima, Fumiharu [8684-10] S3Nakamae, Koji [8680-47] S12
Nakamura, Hiroko [8680-59] SPS1
Nakamura, Ken [8683-6] S2Nakamura, Shinichi [8682-52] SPS2
Nakanishi, Kana [8682-52] SPS2
Nakanishi, Tsutomu [8680-59] SPS1
Nakano, Takeo [8680-38] SPS1
Nakayama, Koichi [8684-10] S3Nam, Jaewoo [8680-36] S10
Nam, Seok-Woo [8681-55] S14
Nam, Young Sun [8683-60] SPS1
Namie, Yuji [8680-58] SPS1, [8682-15] S4Narayana Samy, Aravind [8683-49] S11
Nardi, Damiano [8681-22] S6Naruoka, Takehiko [8680-58] SPS1,[8682-15] S4Nash, Eva [8679-97] SPS1
Nasser, Rajai [8683-44] S10, [8683-44] S6Natman, Spencer [8679-114] SPS1
Natori, Sakurako [8682-11] S4, [8682-3]
S2, [8682-49] SPS1, [8682-51] SPS1,[8685-20] S6Naulleau, Patrick P. 8679 Conference
Chair, 8679 SPS1 Session Chair,[8679-25] S6, [8679-42] S9, [8679-44]
S10, [8679-57] SPS1, [8679-69] SPS1,[8679-76] SPS1Navarro, Christophe [8680-37] S10,[8680-5] S2Nealey, Paul F. [8680-13] S4, [8680-13]
S6, [8680-53] S13, [8682-10] S2,[8682-10] S3Negishi, Nobuyuki [8685-28] SPSNeisser, Mark [8679-101] SPS1, [867978] SPS1, [8679-96] SPS1, [8682-43]
S11
Neumann, Jens-Timo [8679-40] S9,[8679-57] SPS1, [8679-61] SPS1
Neureuther, Andrew R. [8679-57] SPS1,[8679-69] SPS1, [8679-76] SPS1, 8684
Program Committee
Newby, Robert [8682-36] S9Ng, Hoi-Tou [8683-40] S5, [8683-40] S9Ngai, Chris S. 8679 Program Committee,
8679 S8 Session Chair, [8679-32] S7,[8682-5] S2, [8683-5] S2, [8684-19] S7Nicolet, Célia [8680-5] S2
Nihashi, Wataru [8682-40] S10
Ning, GuoXiang [8683-6] S2, [8683-61]
SPS1
Nishimura, Eiichi [8682-19] S4, [8682-19]
S6, [8685-13] S4Nishinaga, Hisashi [8683-9] S3
Noda, Tomoya [8683-24] S5Nojima, Shigeki [8683-10] S3, [8683-8]
S3, [8684-10] S3
Nooitgedagt, Tjitte [8681-91] SPS1
Novikova, Tatiana [8681-39] S11
Noya, Go [8680-82] SPS4, [8682-41] S10
Nozoe, Mari [8681-64] SPS1
Nui, Zhi-Yuan [8683-31] S7OOae, Yoshihisa [8680-72] SPS2
Obata, Tsutomu [8682-70] SPS4
Ober, Christopher K. [8679-5] S2, [86795] S3, [8682-26] S7, [8682-58] SPS2
Ochiai, Yumi [8682-66] SPS3
Ockwell, David [8679-50] S11
Ocola, Leonidas E. [8679-7] S2, [8679-7]
S3, [8680-4] S2
O’Connell, Kathleen M. [8682-68] SPS3
Odaka, Tadahiro [8681-45] S12
Oehrlein, Gottlieb S. 8685 Conference
CoChair, 8685 S2 Session Chair,[8685-6] S2Ogata, Taro [8683-29] S7, [8683-9] S3Ogino, Kozo [8680-49] S12
Oh, Hye-Keun [8679-105] SPS1
Oh, Jaehyoung [8681-64] SPS1
Oh, Sunghyun [8679-46] S10
Oh, Tae-Hwan [8682-24] S7
Ohashi, Takeyoshi [8681-19] S5, [868147] S12
Ohashi, Yuji [8679-58] SPS1, [8679-86]
SPS1
Ohishi, Tetsuya [8685-13] S4Ohmori, Katsumi [8680-62] SPS1
Ohmura, Yasuhiro [8683-53] S12, [868355] S12
Ohnishi, Ryuji [8679-39] S8, [8682-21] S7,[8682-9] S2, [8682-9] S3Ohshio, Shuzo [8680-73] SPS2
Ohtsu, Motoichi [8679-14] S4Ohya, Kaoru [8681-58] SPS1
Ohyi, Hideyuki [8680-17] S5Okada, Takeru [8682-62] SPS3
Okada, Yu [8682-66] SPS3
Okagawa, Yutaka [8681-42] S11, [868143] S11, [8681-70] SPS1
Okazaki, Shinji 8679 Program
Committee, 8679 S1 Session Chair
Okino, Takeshi [8680-66] SPS1
Okitou, Haruki [8681-49] S13
Okoroanyanwu, Uzodinma 8679
Program Committee
O’Leary, Michael J. [8682-59] SPS2
Olson, Bennett W. [8682-33] S9Olson, Steve [8681-32] S9Olynick, Deidre L. [8680-10] S3, [8681-23]
S6, [8682-22] S7, [8682-69] SPS4,[8685-23] SPS
Ongayi, Owendi [8679-6] S2, [8679-6] S3,[8682-39] S10, [8682-42] S10
Onoda, Naka [8683-85] SPS1
Onoue, Takahiro [8679-26] S6, [8679-59]
SPS1
Ootera, Yasuaki [8680-66] SPS1
Orain, Isabelle [8685-10] S3
Orf, Bryan J. [8681-106] SPS1
Orihara, Toshihiko [8679-26] S6+1 360 676 3290

· help@spie.org·

Orlando, Bastien [8681-73] SPS1, [868174] SPS1
Osaki, Atsushi [8680-47] S12
Osawa, Morimi [8680-75] SPS2
Osborne, Jason [8681-100] SPS1, [868136] S10
Oshima, Akihiro [8679-81] SPS1, [867983] SPS1, [8682-18] S5, [8682-45]
S11, [8682-46] S11, [8682-64] SPS3
Osibov, Marcus [8683-58] SPS1, [868362] SPS1, [8683-71] SPS1
Ota, Kazuya [8679-98] SPS1
Ota, Yoshihiro [8681-88] SPS1
Ouyang, Christine Y. [8679-5] S2, [86795] S3, [8682-26] S7Owa, Soichi 8683 Program Committee,
8683 S12 Session Chair
Owe-Yang, Dah-Chung 8682 Program
Committee, 8682 S2 Session Chair
Oyama, Kenichi [8681-108] SPS1,[8682-11] S4, [8682-3] S2, [8682-49]
SPS1, [8682-51] SPS1, [8683-4] S2,[8685-20] S6Oyama, Tomoko Gowa [8679-81] SPS1,[8682-46] S11, [8682-64] SPS3
Ozawa, Mariko [8682-19] S4, [8682-19]
S6

P
Padmabandu, Gunasiri G.  [8683-58]
SPS1 [8683-62] SPS1, [8683-71] SPS1
Padmanaban, Munirathna [8682-27] S8,[8682-41] S10
Pai, Yuan Chi [8681-43] S11, [8681-69]
SPS1
Pain, Laurent 8680 Program Committee,[8680-18] S5, [8680-26] S7, [8680-37]
S10
Painter, Benjamin D. [8683-37] S8Pal, Shyam [8682-23] S7Palmer, Richard E. [8682-25] S7, [868525] SPS
Pan, David Z. 8684 Program Committee,[8684-16] S10, [8684-16] S6, [8684-6]
S2, [8684-8] S3
Pang, Linyong [8679-29] S7Panning, Eric M. 8679 Program
Committee, 8679 S7 Session Chair
Paolucci, Angela [8679-7] S2, [8679-7] S3Paraschiv, Vasile [8685-13] S4, [8685-24]
SPS
Pargon, Erwine 8685 S2 Session Chair,[8685-9] S3
Park, Byong Chon [8681-37] S10
Park, Chan Hoon [8683-60] SPS1
Park, Chan-Ha [8683-15] S4, [8684-17]
S10, [8684-17] S6#SPIELitho

Park, Chul-Hong 8684 Program
Committee, 8684 S8 Session Chair
Park, Haesung [8679-27] S6
Park, Hongki [8683-26] S6Park, Jea-Woo [8684-24] S8
Park, Jeong-Su [8679-54] S11
Park, Ji Soong [8683-21] S5
Park, Jongchul [8685-16] S5
Park, Jong-Moon [8680-79] SPS3
Park, Joon-Soo [8681-55] S14
Park, Ki-Yeop [8683-60] SPS1
Park, Kun-Sik [8680-79] SPS3
Park, Oseo [8683-67] SPS1
Park, Sang-Il [8681-5] S2
Park, Tony [8683-60] SPS1
Park, Yonghee [8681-81] SPS1
Partlow, Matthew J. [8679-87] SPS1
Pastol, Anne [8681-4] S2Patel, Kanaiyalal C. [8680-21] S6, [868021] S8, [8680-30] S8, [8685-21] S6Patrone, Paul N. [8680-63] SPS1
Patterson, Oliver D. [8681-12] S4Pauer, Hagen [8679-12] S3Paul, Jan [8685-30] SPS
Paunescu, Margareta [8680-15] S4,[8680-15] S6Pavel, Eugen [8680-81] SPS4
Pavía-Jiménez, Adriana [8682-37] S4Pawlowski, Georg [8682-41] S10
Peale, Robert E. [8682-80] SPS4
Pease, Roger W. [8680-9] S3Peck, Jason [8679-88] SPS1
Peeters, Rudy [8679-50] S11
Pei, Jojo [8683-56] SPS1
Peijster, Jerry J. M. [8680-23] S7Peng, Danping [8679-29] S7Peng, Qing [8680-4] S2
Penzkofer, Christian [8681-86] SPS1
Perampalam, Puvan [8683-43] S10,[8683-43] S6Pereira, Silvania F. [8681-34] S9Perera, Pradeep N. [8682-69] SPS4
Pérez-Murano, Francesc X. [8680-69]
SPS2
Peroz, Christophe [8680-10] S3
Perske, Marco [8679-12] S3Peters, Jan Hendrik 8679 Program
Committee, 8679 S9 Session ChairPeterson, Brennan L. [8681-21] S6Petranovic, Dusan [8684-22] S7Petrillo, Karen E. [8679-101] SPS1, [867920] S5, [8679-36] S8, [8679-94] SPS1,[8682-44] S11
Pieczulewski, Charles N. [8679-104]
SPS1
Pierson, Bill [8681-87] SPS1, [8681-92]
SPS1
Pileggi, Larry [8684-12] S4, [8684-12] S9Pimenta Barros, Patricia [8680-37] S10
Pitera, Jed W. [8680-32] S4, [8680-32]
S9, [8683-3] S2

61

Index of Authors, Chairs, and Committee Members
Bold = SPIE Corporate Member

Plachinda, Pavel [8681-6] S2
Planchot, Jonathan [8683-38] S8Platzgummer, Elmar [8680-19] S5, [86803] S1
Plönjes-Palm, Elke C. [8679-73] SPS1
Polishchuk, Orest [8680-15] S4, [8680-15]
S6
Pollentier, Ivan [8679-19] S5Polo, Alessandro [8681-34] S9
Pomplun, Jan [8681-102] SPS1, [868175] SPS1, [8683-47] S11
Popescu, Gabriel [8681-15] S4Porter, Hugh [8681-36] S10
Postek, Michael T. Symposium
Committee
Pradelles, Jonathan [8680-37] S10,[8680-5] S2, [8680-50] S12
Preil, Moshe E. [8680-51] S13
Progler, Christopher J. Symposium
Committee
Prokofiev, Alexander V. [8679-110] SPS1
Puls, Jana [8679-72] SPS1

Q
Qi, Zhengqing J. [8679-18] S4, [8680-83]
SPS4
Qin, Jing [8681-31] S9Qiu, Andy [8681-56] S14
Quek, Shyue-Fong [8683-57] SPS1,[8683-76] SPS1

R
Race, Joseph [8681-21] S6Rachford, Aaron [8682-39] S10
Radisic, Dunja [8685-13] S4Rafac, Robert J. [8683-52] S12
Raghunathan, Sudharshanan [8679-24]
S6, [8679-28] S6, [8679-43] S9Rahman, M. Dalil [8682-27] S8Ramadan, Ahmed [8684-11] S3Ramprasad, Shishir [8681-14] S4Ranganatah, Teki [8679-62] SPS1
Rangarajan, Srinivasan [8681-12] S4Rangelow, Ivo W. 8680 Program
Committee, 8680 S11 Session Chair,[8680-42] S11, [8680-44] S11, [868045] S11
Rasappa, Sozaraj [8680-60] SPS1
Rathsack, Benjamen M. 8680 Program
Committee, 8680 S10 Session Chair,8680 S9 Session Chair, [8680-51] S13,
[8681-76] SPS1, [8682-19] S4, [868219] S6, 8684 S4 Session Chair
Rawat, Pawan [8681-53] S14
Raymond, Christopher J. 8681 Program
Committee, 8681 S11 Session Chair,[8681-24] S6
Rechtsteiner, Gregory [8683-28] S6Reilly, Michael [8682-16] S4Ren, He [8684-19] S7
Renaldo, Alfred F. [8680-29] S8Introducing a new benefit
for SPIE journal authors—
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62

Resnick, Douglas J. 8680 Conference
CoChair, 8680 S3 Session Chair,[8680-11] S3, [8680-2] S1, [8680-27]
S8, [8680-31] S8, [8680-9] S3
Rettner, Charles T. [8680-33] S4, [868033] S9, [8683-3] S2Rezadad, Imen [8682-80] SPS4
Richter, Frank [8683-61] SPS1
Riedel, Stefan [8685-30] SPS
Rieger, Michael L. 8684 Program
Committee, 8684 S7 Session Chair
Rincon Delgadillo, Paulina A. [8680-20]
S6, [8680-20] S8, [8680-53] S13,[8680-64] SPS1, [8681-67] SPS1,[8682-10] S2, [8682-10] S3Rio, David [8683-46] S11
Robert, Frederic [8683-18] S4, [8683-39]
S8
Robertson, Stewart A. [8682-2] S1,[8683-33] S7Robinson, Alex P.G. [8682-25] S7, [868525] SPS
Robinson, John C. 8681 Program
Committee, 8681 S2 Session Chair,
8681 SPS1 Session Chair, [8681-92]
SPS1
Robinson, Tod Evan [8679-53] S11
Robinson, Zachary R. [8679-84] SPS1
Rocca, Jorge J. 8679 Program
Committee
Rodríguez-Cantó, Pedro Javier [8682-31]
S8, [8682-32] S8Rodriguez-Manzo, Julio [8680-83] SPS4
Roh, Yonghan
Rokitski, Rostislav I. [8683-52] S12,[8683-58] SPS1
Rokitski, Slava [8683-62] SPS1
Romo-Negreira, Ainhoa [8680-53] S13,[8680-64] SPS1, [8682-10] S2, [868210] S3, [8682-19] S4, [8682-19] S6,[8682-20] S4, [8682-20] S6Ronse, Kurt G. 8679 Program
Committee, 8679 S5 Session Chair,[8679-107] SPS1
Rosal, Robert [8683-62] SPS1, [8683-71]
SPS1
Rosielle, Nick [8683-89] SPS1
Ross, Caroline A. [8680-1] S1
Rosseel, Erik [8682-6] S2
Rost, Daniel L. [8681-109] SPS1
Rottenkolber, Erica [8681-53] S14
Rudolph, Matthias [8685-30] SPS
Rueger, Neal R. [8685-12] S4
Ruhm, Matthias [8683-61] SPS1
Ruiz, Ricardo 8680 Program Committee,
8680 S2 Session Chair, [8680-21] S6,[8680-21] S8, [8680-30] S8, 8685 S6
Session Chair, [8685-21] S6Ruoff, Johannes [8679-61] SPS1
Rusu, Paul [8683-38] S8Ruzic, David N. [8679-13] S3, [8679-88]
SPS1, [8679-93] SPS1SPIE Advanced Lithography 2013·

Ryckaert, Julien [8679-107] SPS1
Ryu, Chang-Hoon [8683-60] SPS1
Ryu, Yoon-Jung [8679-54] S11

S
Sadeghian, Hamed [8681-121] SPS1
Saifullah, Mohammad S. M. [8682-83]
SPS3
Saito, Takashi [8682-50] SPS1
Sakai, Hideo [8681-88] SPS1, [8681-9] S3
Sakai, Kei [8681-67] SPS1
Sakaida, Yasushi [8682-4] S2
Sakamoto, Rikimaru [8679-39] S8, [86824] S2, [8682-9] S2, [8682-9] S3Samukawa, Seiji [8682-62] SPS3, 8685
Program Committee, 8685 S5 Session
Chair
Sanchez, Martha I. 8680 S6 Session
Chair, 8681 Program Committee, 8681
S5 Session Chair, 8681 S8 Session
Chair, 8682 S5 Session Chair, [868244] S11
Sanders, Daniel P. [8680-15] S4, [868015] S6, [8680-32] S4, [8680-32] S9,[8680-33] S4, [8680-33] S9, 8682
Program Committee, 8682 S8 Session
Chair, [8682-15] S4, [8685-19] S6Santillan, Julius Joseph S. [8679-38] S8,[8682-17] S5Sarathy, T. P. [8681-96] SPS1
Sarlette, Daniel [8683-35] S8, [8683-59]
SPS1
Sarma, Chandrasekhar [8679-101] SPS1,[8679-96] SPS1
Sasaki, Youichi [8683-51] S12
Sasamoto, Satoru [8683-26] S6
Sasao, Norikatsu [8680-66] SPS1
Satake, Makoto [8685-28] SPSSatake, Masaki [8679-29] S7, [8681-109]
SPS1
Sato, Hironobu [8680-40] S10, [8680-55]
SPS1
Saulnier, Nicole [8682-14] S4Savari, Serap A. [8680-25] S7
Scaccabarozzi, Luigi [8679-3] S1
Schäfer, Bernd [8679-73] SPS1
Schellenberg, Frank M. 8680 Program
Committee, 8680 S11 Session Chair,8680 S13 Session Chair
Schiavone, Patrick [8680-76] SPS2
Schlief, Ralph E. [8679-30] S7
Schlosser, Don [8681-98] SPS1
Schmeide, Matthias [8683-59] SPS1
Schmid, Gerard M. [8680-51] S13, [868056] S10
Schmidt, Frank [8681-102] SPS1, [868175] SPS1
Schmidt, Sebastian W. [8681-86] SPS1

www.spie.org/al

Schmitt-Weaver, Emil P. [8681-91] SPS1
Schmöller, Thomas [8683-43] S10, [868343] S6Schneider, Jens [8683-35] S8, [8683-59]
SPS1
Scholze, Frank [8679-72] SPS1
Schramm, Jessy [8683-49] S11
Schrinsky, A. J. [8685-12] S4Schuck, P. James [8680-27] S8Schulze, Steffen F. [8683-6] S2
Schwartzberg, Adam M. [8682-69]
SPS4
Schweikert, Emile A. [8682-37] S4Seaberg, Matthew D. [8681-17] S4Seevaratnam, Gitanjali K. [8681-53] S14
Seidel, Robert [8680-46] S12
Seino, Yuriko [8680-55] SPS1
Seitz, Wolfgang [8679-52] S11
Sekiguchi, Atsushi [8682-54] SPS2,[8682-55] SPS2, [8682-56] SPS2,[8682-64] SPS3, [8682-70] SPS4
Sekiguchi, Tomoko [8681-19] S5
Seltmann, Rolf [8683-49] S11
Semprez, Olivier R. [8679-8] S3Sendelbach, Matthew J. 8681 Program
Committee, 8681 S12 Session Chair,
8681 S9 Session Chair, 8681 SPS1
Session Chair
Senowitz, Corey [8681-6] S2Senthamaraikannan, Ramsankar [868060] SPS1
Seo, Hwan-Seok [8679-2] S1, [8679-57]
SPS1
Seo, IlSeok [8685-29] SPS
Seo, Jaehun [8685-16] S5Seo, Jaekyung [8682-24] S7Seo, Manseung [8683-32] S7Seong, Nakgeuon [8683-28] S6Serebryakov, Alexander [8683-31] S7Seshimo, Takehiro [8680-6] S2Setoguchi, Katsumi [8681-82] SPS1
Settens, Charles M. [8681-20] S6Sevegney, Michael S. [8682-75] SPS5
Shafee, Marwah [8684-24] S8
Shaik, Adil [8682-71] SPS4
Shaikh, Shahid [8682-61] SPS2
Shamiryan, Denis 8685 Program
Committee
Shao, Feng [8683-56] SPS1
Sharma, Rahul [8680-14] S4, [8680-14]
S6
Shaw, Dale M. [8680-67] SPS2
Shaw, Matthew T. [8680-60] SPS1
Sheehan, Michael T. [8682-79] SPS4
Shen, Hongliang [8685-11] S3Shen, Yiping [8683-82] SPS1
Shen, Yu-Tian [8681-115] SPS2
Shi, Irene [8681-60] SPS1
Shi, Jian [8681-100] SPS1
Shi, Xiaoping [8685-10] S3
Shi, Xuelong 8683 Program Committee,
8683 S7 Session Chair

Index of Authors, Chairs, and Committee Members
Shibayama, Wataru [8679-39] S8Shibazaki, Yuichi [8683-55] S12
Shibuya, Masato [8683-81] SPS1
Shieh, Jason J. [8681-115] SPS2
Shiely, James P. [8684-13] S5, [8684-13]
S9
Shigaki, Syuhei [8679-39] S8Shih, Chih-Tsung [8679-56] SPS1
Shih, Todd [8681-112] SPS1
Shim, Myoungseob
Shima, Motoyuki [8682-1] S1
Shimizu, Makoto [8679-34] S8
Shimizu, Youichi [8680-72] SPS2
Shimoaoki, Takeshi [8679-100] SPS1
Shimokawa, Tsutomu [8682-1] S1
Shimura, Satoru [8682-50] SPS1
Shin, Chul-Ho [8680-36] S10
Shin, Jaw-Jung [8680-48] S12
Shindo, Hiroyuki [8681-10] S3, [8681-88]
SPS1, [8681-9] S3
Shiobara, Eishi [8679-21] S5, [8679-82]
SPS1, [8679-85] SPS1
Shiono, Daiju [8680-62] SPS1
Shirasaki, Hirokimi [8681-78] SPS1
Shirata, Yosuke [8683-55] S12
Shiratani, Motohiro [8682-38] S10
Shoki, Tsutomu 8679 Program
Committee, 8679 S10 Session Chair,[8679-26] S6Shriyan, Sameet K. [8680-48] S12
Shykind, David [8680-39] S10
Si, Jinhai [8680-68] SPS2
Siebein, Kerry [8682-36] S9Siebert, Joachim [8679-97] SPS1, [868322] S5Silver, Richard M. 8681 Program
Committee, 8681 S6 Session Chair,
8681 S7 Session Chair, [8681-13] S4,[8681-31] S9
Sim, Hak-Yong [8683-64] SPS1
Simmons, Mark C. [8684-25] S8
Simmons, Sean [8685-26] SPSSingh, Arjun [8682-10] S2, [8682-10] S3Singh, SherJang [8679-49] S10
Singh, Vivek K. 8684 Program
Committee, [8685-1] S1
Sivakumar, Sam [8679-1] S1, 8683
Program Committee
Sizyuk, Tatyana [8679-10] S3, [8679-91]
SPS1
Skyberg, Bjorn [8681-98] SPS1
Slot, Erwin [8680-23] S7
Smayling, Michael C. [8683-4] S2Smith, Bruce W. [8679-24] S6, 8683
Program Committee, 8683 S3 Session
Chair, [8683-16] S4Smith, Dan [8679-3] S1Smith, Danica [8681-12] S4Smith, Donald K. [8679-87] SPS1
Smith, James H. [8680-24] S7Smith, Jeffrey T. [8682-61] SPS2
Smith, Mark D. [8682-16] S4, [8682-2] S1

Socquet, Nelly [8681-74] SPS1
Sohmen, Erik M. [8679-94] SPS1, [867996] SPS1
Sohn, Jaewoong [8679-20] S5
Sohn, Martin [8681-13] S4Solecky, Eric [8681-12] S4Soltwisch, Victor [8679-72] SPS1
Somervell, Mark H. [8680-51] S13, [868052] S13, [8680-53] S13, [8680-64]
SPS1, 8682 Conference Chair, 8682
S1 Session Chair, [8682-10] S2, [868210] S3, [8682-19] S4, [8682-19] S6,[8682-20] S4, [8682-20] S6
Song, Hua [8683-15] S4, [8684-13] S5,[8684-13] S9
Soufli, Regina [8679-42] S9Sourd, Claire [8680-26] S7Souriau, Laurent [8685-10] S3Spanos, Costas J. 8681 Program
Committee, 8681 S6 Session Chair
Spaziani, Nicolas [8681-74] SPS1
Spiller, Eberhard Adolf [8679-42] S9Spivey, Robert F. [8679-67] SPS1
Sporre, John [8679-13] S3, [8679-88]
SPS1, [8679-93] SPS1
Sreenivasan, S. V. [8680-11] S3, [868031] S8Srivastava, Shailendra N. [8679-88] SPS1
Srivatsa, Arun [8681-12] S4
St. Germain, Alan R. [8680-67] SPS2
Stach, Eric A. [8680-83] SPS4
Stadelhoff, Christian [8679-72] SPS1
Stamper, Andrew [8681-12] S4Standiford, Keith P. [8679-30] S7
Stanton, William A. [8681-110] SPS1
Starikov, Alexander 8681 Conference
Chair, 8681 S1 Session Chair, 8681
S15 Session Chair
Steegen, An [8679-107] SPS1
Steenbrink, Stijn W. H. K. [8680-23] S7Stegemann, Maik [8683-35] S8Steidel, Katja [8680-46] S12, [8682-34]
S9
Stein, Gila E. [8680-22] S6, [8680-22] S8Steinbuch, Maarten [8683-89] SPS1
Steiner, Philip [8680-28] S8Stickler, Daniel [8683-83] SPS1
Stinzianni, Emilio [8679-45] S10, [867959] SPS1
Stobert, Ian [8685-3] S1
Stoeldraijer, Judon [8679-50] S11
Stokowski, Stanley E. 8679 Program
Committee, 8679 S10 Session Chair
Stolberg, Ines A. 8680 Program
Committee, 8680 S12 Session Chair
Strauss, Michael [8681-6] S2Strojwas, Andrzej J. [8684-12] S4, [868412] S9Sturtevant, John L. 8683 S10 Session
Chair, [8683-18] S4, [8683-6] S2, 8684
Conference CoChair, 8684 S1 Session
Chair, 8684 S6 Session Chair

Su, Chanmin [8679-45] S10, [8679-47]
S10, [8681-100] SPS1
Su, Irene [8683-15] S4
Su, Yi-Chen [8682-78] SPS3
Subramanian, Mahadevan Ganapathi[8680-31] S8Subramany, Lokesh [8681-2] S2, [868223] S7Sugahara, Hitoshi [8681-9] S3
Sugatani, Shinji [8680-73] SPS2, [868075] SPS2
Sugawara, Katsuya [8680-66] SPS1
Sugie, Norihiko [8679-21] S5, [8679-85]
SPS1
Suh, Hyo Seon [8680-13] S4, [8680-13]
S6
Sumioka, Junji [8682-70] SPS4
Sun, Gang [8681-85] SPS1
Sun, Guorong [8682-37] S4Sun, Jeff Fuge [8680-16] S5Sun, Lei [8679-24] S6, [8679-28] S6Sunday, Daniel F. [8680-22] S6, [8680-22]
S8, [8681-20] S6, [8681-25] S7, [868144] S12
Sundberg, Linda K. [8682-44] S11
Sung, Hyunju
Sungauer, Elodie [8683-18] S4, [8683-39]
S8Suri, Mayur [8680-20] S6, [8680-20] S8Suzuki, Hiroyuki [8680-65] SPS1
Suzuki, Tomohiro [8679-17] S4Sweis, Jason [8681-76] SPS1
Szucs, Anna [8683-38] S8T
Tabatabaie-Alavi, Kamal [8680-67] SPS2
Tabet, Milad [8681-96] SPS1
Tada, Yasuhiko [8680-13] S4, [8680-13]
S6, [8685-28] SPS
Tagami, Masayoshi [8682-14] S4Tagawa, Seiichi [8679-77] SPS1, [867981] SPS1, [8679-83] SPS1, [8682-18]
S5, [8682-45] S11, [8682-46] S11,[8682-47] S11, [8682-53] SPS2, [868264] SPS3
Tahara, Shigeru [8682-19] S4, [8682-19]
S6, [8685-13] S4Tajima, Keiichi [8683-22] S5Takagi, Isamu [8679-21] S5, [8679-85]
SPS1
Takagi, Noriaki [8679-68] SPS1
Takahashi, Kazuhiro 8683 Program
Committee, 8683 S5 Session Chair
Takahashi, Masanori [8683-10] S3Takahashi, Satoru [8681-49] S13
Takahashi, Toshiya [8679-21] S5, [867985] SPS1, [8682-21] S7Takahashi, Yasushi [8680-73] SPS2
Takahisa, Kikuchi [8683-55] S12+1 360 676 3290

· help@spie.org·

Takamasu, Kiyoshi [8681-49] S13
Takashi, Koike [8681-54] S14
Takashi, Saito [8679-36] S8Takasuka, Masaaki [8682-66] SPS3
Takata, Masaaki [8679-58] SPS1
Takeda, Takashi [8682-40] S10
Takehisa, Kiwamu [8679-17] S4Takei, Satoshi [8682-57] SPS2, [868264] SPS3, [8682-70] SPS4
Takimoto, Yoshio [8682-1] S1Takita, Hiroshi [8680-75] SPS2
Takizawa, Hiroo [8679-4] S1, [8682-40]
S10
Tamada, Osamu [8679-104] SPS1
Tamaki, Junichi [8683-81] SPS1
Tamaoki, Sayaka [8683-23] S5Tamura, Takao [8683-85] SPS1
Tan, Bo [8680-71] SPS2
Tan, Chi Lim [8685-10] S3Tan, John [8681-79] SPS1
Tan, Zhengquan [8681-101] SPS1
Tanabe, Shinichi [8681-113] SPS1
Tanaka, Hiroyuki [8679-21] S5, [8679-85]
SPS1
Tanaka, Hitoshi [8680-72] SPS2
Tanaka, Junichi [8681-19] S5Tanaka, Satoshi [8680-40] S10, [8683-10]
S3
Tanaka, Yuusuke [8683-85] SPS1
Tang, Betty [8682-61] SPS2
Tang, Yun [8683-57] SPS1
Tang, Yu-Po [8681-66] SPS1
Taniguchi, Takashi [8680-54] S13
Tanouchi, Keiji [8682-19] S4, [8682-19]
S6
Tarrio, Charles [8679-19] S5, [8679-22]
S5, [8679-71] SPS1
Tarutani, Shinji [8679-4] S1, [8682-40]
S10, [8682-43] S11
Taylor, John [8681-2] S2Tchikoulaeva, Anna 8679 Program
Committee, [8679-17] S4, [8681-112]
SPS1, [8681-113] SPS1
Teeuwen, Leon [8679-94] SPS1
Teipel, Ansgar [8683-79] SPS1
Tejnil, Edita [8683-6] S2Teki, Ranganath [8679-14] S4, [8679-16]
S4, [8679-48] S10, [8679-63] SPS1,[8679-67] SPS1, [8681-65] SPS1
Tel, Wim [8683-54] S12
Teramoto, Yusuke [8679-8] S3Terasawa, Tsuneo [8679-46] S10, [867960] SPS1, [8679-64] SPS1, [8679-66]
SPS1, [8679-68] SPS1, [8679-99]
SPS1
Terhalle, Bernd [8679-75] SPS1
Thackeray, James W. [8679-6] S2, [86796] S3, [8682-37] S4, [8682-39] S10
Thean, Aaron [8679-107] SPS1
Thérèse, Romain [8681-5] S2, [8681-51]
S13
Thian, Eng San [8682-83] SPS3#SPIELitho

Thomas, Alan [8683-19] S5
Thompson, Andrew [8682-77] SPS3
Thompson, Michael O. [8682-58] SPS2
Thornes, Joshua J. [8683-28] S6, [868352] S12
Thrun, Xaver [8682-34] S9, [8685-30] SPS
Tian, Eric Mingjing [8681-60] SPS1
Tian, Haitong [8684-7] S2Tiberio, Richard [8680-35] S4, [8680-35]
S9
Tiedtke, Kai [8679-73] SPS1
Tien, David C. [8681-43] S11, [8681-56]
S14, [8681-92] SPS1
Tien, Hung-Yu [8679-18] S4
Tijo, Melia [8682-15] S4Tiron, Raluca [8680-37] S10, [8680-5] S2
Tjahjadi, Jovita [8685-21] S6Tjio, Melia [8680-15] S4, [8680-15] S6,[8680-33] S4, [8680-33] S9Tokashiki, Ken [8685-16] S5Tokei, Zsolt [8679-107] SPS1
Tolani, Vikram L. [8679-29] S7, [8681109] SPS1
Tolbert, Laren M. [8682-81] SPS3, [868282] SPS3
Tomita, Tadatoshi [8680-38] SPS1Tomita, Tadayuki [8681-76] SPS1
Tong, William M. 8680 Conference Chair,[8680-16] S5Torres, Juan Andres [8684-24] S8Toyoda, Yasutaka [8681-88] SPS1
Tran, Hoang V. [8682-79] SPS4
Tran, Jacqueline [8681-39] S11
Tran, Natalie [8681-98] SPS1
Tran, Stephen [8681-56] S14
Trease, David [8681-14] S4Trefonas, Peter [8680-14] S4, [8680-14]
S6, [8680-7] S2, [8682-37] S4, [868268] SPS3
Trikeriotis, Markos [8679-5] S2, [8679-5]
S3, [8682-26] S7Tripp, Marie K. [8681-22] S6
Tritchkov, Alexander [8683-14] S4,[8683-17] S4Troetschel, Daniela [8682-63] SPS3
Truong, Hoa [8680-33] S4, [8680-33] S9,[8682-15] S4, [8682-44] S11
Tsai, Hsinyu [8680-32] S4, [8680-32] S9,[8683-3] S2, [8685-19] S6Tsai, Hui Husan [8682-13] S4Tsai, Jenny [8684-25] S8Tsai, Kuen-Yu [8681-115] SPS2
Tsai, Meng-Feng [8682-12] SPS2
Tsai, Ming-Jinn [8683-36] S8
Tsao, Wei Che [8681-79] SPS1
Tseng, Yu-Chih [8680-4] S2Tsubaki, Hideaki [8679-4] S1, [8682-43]
S11
Tsubata, Kyoichi [8683-85] SPS1
Tsujita, Koichiro [8683-4] S2Tsushima, Hiroaki [8683-51] S12

63

Index of Authors, Chairs, and Committee Members
Bold = SPIE Corporate Member

Tsuzuki, Shuichi [8682-7] S2
Tünnermann, Andreas [8679-12] S3Turner, Kevin T. 8680 Program
Committee
Turnidge, Martin [8680-24] S7Tyminski, Jacek K. [8683-47] S11
Tzai, Wei-Jhe [8681-69] SPS1, [8681-97]
SPS1
Tzviatkov, Plamen 8682 Program
Committee, 8682 S7 Session ChairU
Ueda, Kazuhiro [8681-82] SPS1
Uesugi, Takuji [8682-62] SPS3
Ugurlu, Ozan [8681-6] S2
Ukraintsev, Vladimir A. 8681 Program
Committee, 8681 S12 Session Chair,
8681 S13 Session Chair
Ullah, Md Zakir [8681-56] S14
Umeda, Toru [8682-7] S2Upadhyaya, Mihir [8679-113] SPS1
Urbach, Hendrik Paul [8681-34] S9Urensky, Ronen [8681-30] S6, [8681-30]
S8
Utzny, Clemens S. [8681-8] S3

Vandenberghe, Geert [8679-107] SPS1,
8683 Program Committee, 8683 S5
Session Chair
Vandenbroeck, Nadia [8685-10] S3
Vangoidsenhoven, Diziana [8685-10] S3Vannufel, Cyril [8681-39] S11
Vansumere, Wim [8679-107] SPS1
Vartanian, Victor H. [8681-32] S9Venkatakrishnan, Krishnan [8680-71]
SPS2
Ventrice, Carl [8679-7] S2, [8679-7] S3,[8679-84] SPS1
Vergeer, Niels [8680-50] S12
Verkest, Diederik [8679-107] SPS1
Versluijs, Janko [8685-10] S3
Versluis, Richard [8681-72] SPS1
Vertommen, Johan [8685-10] S3Vikram, Abhishek [8681-94] SPS1
Villaret, Alexandre [8683-14] S4Vinet, Maud [8682-28] S8Vinokhodov, Aleksander Yu. [8679-110]
SPS1
Vockenhuber, Michaela [8679-35] S8,[8679-75] SPS1
Vogler, Marko [8680-10] S3
Volkman, Catherine R. [8681-27] S7,[8681-28] S7Vora, Ankit [8680-15] S4, [8680-15] S6Vorbringer-Dorozhovets, Nataliya [868044] S11
Vuppala, Soujanya [8681-106] SPS1

V
Vacca, Anthony D. [8679-29] S7, [8681111] SPS1
Vaglio Pret, Alessandro [8679-111]
SPS1, [8679-95] SPS1, [8685-7] S2
Vaid, Alok 8681 Program Committee,
8681 S7 Session Chair, [8681-12] S4,[8681-2] S2, [8681-7] S3
Vaidyanathan, Kaushik [8684-12] S4,[8684-12] S9Valeri, David [8682-42] S10
van Berkel, Marijn [8683-62] SPS1
Van de Kerkhove, Jeroen [8681-9] S3,[8683-46] S11
van den Akker, Theo [8679-94] SPS1
van den Dool, Teun C. [8681-121] SPS1
Van den Hove, Luc Symposium
Committee
van der Donck, Jacques C. J. [8681-72]
SPS1
van der Laan, Hans [8683-25] S6, [868354] S12
van der Walle, Peter [8681-72] SPS1
Van dr Horst, Jan-Willem [8679-50] S11
van Haren, Richard J. F. [8681-4] S2
Van Look, Lieve [8683-28] S6
Van Riet, Mike [8681-14] S4van Setten, Eelco [8679-50] S11
Van, M. P. [8682-65] SPS364

W
Wada, Akira [8682-62] SPS3
Wagner, Heiko [8681-113] SPS1
Wagner, Mike D. [8679-6] S2, [8679-6]
S3, [8682-42] S10
Wago, Koichi [8680-28] S8Wakamoto, Koichi [8681-29] S6, [868129] S8, [8681-30] S6, [8681-30] S8Wakamoto, Shinji [8683-26] S6Walimbe, Atul [8684-8] S3Wallow, Thomas I. 8679 Program
Committee, 8679 S8 Session Chair,[8679-24] S6, [8679-28] S6, [8679-97]
SPS1, 8682 Conference CoChair, 8682
S1 Session Chair
Wallraff, Gregory M. [8682-44] S11
Wan, Jane [8680-15] S4, [8680-15] S6Wan, Lei [8680-13] S4, [8680-13] S6,[8680-21] S6, [8680-21] S8, [8680-30]
S8, [8685-21] S6
Wand, Michael D. [8681-116] SPS2
Wang, Anthony Chunqing [8683-15] S4Wang, Baoliang [8683-84] SPS1
Wang, ChangAn [8683-45] S11
Wang, Chengqing [8681-20] S6, [868125] S7

Wang, Chunmei [8681-45] S12
Wang, Deyan [8682-68] SPS3
Wang, Fan [8681-90] SPS1, [8683-90]
SPS1
Wang, Fei [8679-18] S4Wang, Haiming [8681-100] SPS1
Wang, Li [8679-35] S8, [8679-75] SPS1
Wang, Liyuan [8682-67] SPS3
Wang, Lynn T. [8684-9] S3Wang, Shuangqing [8679-109] SPS1
Wang, Vivien [8681-53] S14
Wang, Wen-Chuan [8680-16] S5, [868048] S12
Wang, Wen-Yun [8682-78] SPS3
Wang, Xiangzhao [8683-63] SPS1
Wang, Ying [8683-80] SPS1
Wang, Yubao [8680-61] SPS1, [8685-26]
SPS
Warisawa, Shin’ichi [8680-65] SPS1
Washburn, Carlton [8682-76] SPS5
Washio, Masakazu [8679-81] SPS1,[8682-46] S11
Watanabe, Hidehiro [8679-17] S4, [867946] S10, [8679-64] SPS1, [8679-66]
SPS1, [8679-99] SPS1
Watkins, James 8680 Program
Committee, 8680 S10 Session Chair
Watts, Mike P. [8680-80] SPS3
Wege, Stephan [8685-30] SPS
Wei, Alexander [8683-19] S5
Wei, Andy [8685-11] S3Wei, Chih-I [8683-74] SPS1
Wei, David [8683-48] S11
Wei, Hannah [8681-91] SPS1
Wei, Hung-Wen [8682-35] S9, [8685-27]
SPS
Wei, Yayi [8682-13] S4, [8682-23] S7
Weigand, Michael [8685-26] SPS
Weilnboeck, Florian [8685-6] S2Weinheimer, Corey J. [8680-39] S10
Weinhold, Jeffrey D. [8680-14] S4, [868014] S6, [8680-7] S2Werner, Thomas [8680-46] S12
Westerhoff, Thomas [8683-88] SPS1
White, Roy L. [8679-53] S11
Whittaker, Andrew K. [8680-8] S2
Wiaux, Vincent [8683-33] S7, [8685-10]
S3
Wiedemann, Pablo [8680-26] S7
Wieland, Marco 8680 Program
Committee, 8680 S12 Session Chair,8680 S5 Session Chair, [8680-23] S7Wilcox, Nathan E. [8682-33] S9Wilkens, Peter J. [8681-96] SPS1
Willson, Carlton Grant Symposium
Committee, [8680-6] S2, [8682-30] S8Wilson, Dan [8683-58] SPS1, [8683-62]
SPS1

SPIE Advanced Lithography 2013·

Wiltshire, Timothy J. [8681-53] S14
Winroth, Gustaf Lars [8679-95] SPS1,[8682-6] S2, [8685-24] SPS
Wise, Rich 8685 S1 Session Chair
Wittich, Gero [8679-52] S11
Wolf, Elizabeth [8682-27] S8Wong, Cheuk [8681-53] S14
Wong, H. S. Philip [8680-35] S4, [868035] S9, [8680-57] SPS1
Wong, Martin D. F. [8684-13] S5, [868413] S9, [8684-7] S2
Wong, Patrick [8683-33] S7, [8685-10] S3Wong, Weilong [8683-61] SPS1
Wood, Obert R. 8679 Conference
CoChair, 8679 SPS1 Session Chair,[8679-24] S6, [8679-28] S6, [8679-43]
S9, [8679-94] SPS1
Wooley, Karen L. [8682-37] S4Wright, Scott [8679-96] SPS1
Wu, Chen-Hao [8682-78] SPS3
Wu, Chunghsi Joe [8682-28] S8Wu, Hengpeng [8680-15] S4, [8680-15]
S6Wu, Hung-Ming [8682-12] SPS2Wu, J. Y. [8681-79] SPS1
Wu, Jason [8684-25] S8Wu, Jimmy C. H. [8681-43] S11
Wu, Joanne [8681-60] SPS1
Wu, Jui-Ching [8679-23] S5, [8679-80]
SPS1
Wu, Ke-Chih [8681-60] SPS1
Wu, Steven [8682-78] SPS3
Wu, Tsai-Wei [8685-21] S6Wu, Wei 8680 Program Committee
Wu, Wen-li [8680-22] S6, [8680-22] S8,[8681-20] S6, [8681-25] S7, [8681-44]
S12

X
Xia, Qi [8683-75] SPS1
Xiao, Hong [8681-14] S4
Xiao, Sheng Wei [8681-71] SPS1
Xiao, Shuaigang [8680-28] S8Xie, Peng  [8682-5] S2, [8684-19] S7Xie, Xiaobo [8679-31] S7, [8683-39] S8Xing, Tingwen [8683-86] SPS1
Xu, Cheng-Bai [8682-68] SPS3
Xu, Frank Y. [8680-11] S3, [8680-31] S8Xu, Jeff 8685 Program Committee
Xu, Ji [8680-51] S13, [8680-56] S10
Xu, Jiajun [8683-86] SPS1
Xu, Jian [8679-109] SPS1
Xu, Kaidong [8685-10] S3
Xu, Verne [8683-56] SPS1
Xue, Jun [8682-5] S2
Xue, Xiang [8682-25] S7

www.spie.org/alYYaegashi, Hidetami [8681-108] SPS1,[8682-11] S4, [8682-3] S2, [8682-49]
SPS1, [8682-51] SPS1, [8683-4] S2,[8685-20] S6Yaguchi, Hiroaki [8679-39] S8, [8682-9]
S2, [8682-9] S3Yakushev, Oleg F. [8679-110] SPS1
Yamada, Akio [8680-72] SPS2
Yamada, Naofumi [8679-86] SPS1
Yamaguchi, Atsuko [8681-19] S5, [868147] S12
Yamaguchi, Satoru [8681-42] S11
Yamaguchi, Yoshikazu [8680-58] SPS1,[8682-1] S1, [8682-15] S4Yamakawa, Masako [8682-66] SPS3
Yamamoto, Hajime [8683-53] S12
Yamamoto, Hiroki [8682-47] S11
Yamamoto, Kazuhito [8681-112] SPS1
Yamamoto, Ryousuke [8680-66] SPS1
Yamanaka, Takuya [8681-58] SPS1
Yamane, Takeshi [8679-46] S10
Yamashita, Tsuneo [8680-12] S3Yamato, Masatoshi [8682-11] S4, [86823] S2, [8682-49] SPS1, [8682-51]
SPS1, [8685-20] S6Yamauchi, Shohei [8682-11] S4, [8682-3]
S2, [8682-49] SPS1, [8682-51] SPS1,[8685-20] S6Yang, Chaoxing [8683-63] SPS1
Yang, Chin-Cheng [8683-72] SPS1
Yang, Chu-Ya [8682-35] S9Yang, Dae Geun [8685-11] S3Yang, Dong Xu [8682-25] S7
Yang, Ellyn [8683-57] SPS1, [8683-76]
SPS1
Yang, Elvis [8682-60] SPS2, [8683-72]
SPS1, [8683-73] SPS1
Yang, Guoqiang [8679-109] SPS1
Yang, Hyun-Jo [8683-15] S4, [8684-17]
S10, [8684-17] S6Yang, Jack [8680-31] S8Yang, Jason [8680-16] S5Yang, Jeehong [8680-25] S7
Yang, Jinfeng [8682-45] S11
Yang, Qing [8680-68] SPS2
Yang, Qing [8683-43] S10, [8683-43] S6
Yang, Seung-Hune [8683-11] S3Yang, Siyuan Frank [8681-68] SPS1,[8681-77] SPS1
Yang, Ta-Hung [8682-60] SPS2, [868372] SPS1, [8683-73] SPS1
Yang, XiaoMin [8680-28] S8Yang, Zhengmao [8680-11] S3Yao, Huirong [8682-27] S8, [8682-41] S10
Yasuda, Atsushi [8682-62] SPS3
Yatsuda, Koichi [8682-19] S4, [8682-19]
S6, [8685-13] S4Yatsui, Takashi [8679-14] S4Yeh, Tsung-Ju [8682-68] SPS3
Yeh, Wei-Ming [8682-81] SPS3
Yen, Anthony Symposium Committee,[8679-23] S5, [8679-56] SPS1, [867980] SPS1, 8685 Program Committee
Yeo, Hyunyoung
Yeo, Jeongho 8679 Program Committee,[8681-37] S10, [8681-80] SPS1
Yeo, Yee-Chia [8681-107] SPS1
Yesilada, Emek [8683-14] S4, [8683-18]
S4, [8683-38] S8, [8683-39] S8Yi, He [8680-35] S4, [8680-35] S9, [868056] S10, [8680-57] SPS1Yi, Shiyong [8680-36] S10
Yim, Dong Gyu [8683-15] S4, [8684-17]
S10, [8684-17] S6Yin, Jian [8680-15] S4, [8680-15] S6,[8680-30] S8Yin, Vic [8681-112] SPS1
Yin, Yunpeng [8680-52] S13
Yokokawa, Natsumi [8682-40] S10
Yokosuka, Toshiyuki [8681-61] SPS1
Yokoyama, Yoshiyuki [8682-57] SPS2,[8682-70] SPS4
Yonemitsu, Hiroki [8680-55] SPS1
Yonenaga, Dean [8681-109] SPS1
Yong, Jiale [8680-68] SPS2
Yoo, Gyun [8681-16] S4Yoo, Hyungwon [8681-64] SPS1
Yoo, Seong-Ook [8680-79] SPS3
Yoo, Sungchul [8681-97] SPS1
Yoon, Kwang-sun [8682-24] S7
Yoshida, Hiroshi [8680-13] S4, [8680-13]
S6, [8680-21] S6, [8680-21] S8, [868167] SPS1, [8685-28] SPS
Yoshida, Takashi [8680-17] S5Yoshida, Yoichi [8682-45] S11
Yoshihara, Kosuke [8682-50] SPS1
Yoshimoto, Kenji [8680-54] S13
Yoshimoto, Kenji [8680-56] S10
Yoshioka, Masaki 8679 Program
Committee, [8679-8] S3Youn, Bumjoon [8682-24] S7
Younkin, Todd Ross [8679-95] SPS1,
8682 Program Committee, 8682 S10Session Chair, [8682-10] S2, [8682-10]
S3, [8682-20] S4, [8682-20] S6Yu, Bei [8684-16] S10, [8684-16] S6,[8684-6] S2
Yu, Chih-Chieh [8683-72] SPS1
Yu, Chun Chi [8681-43] S11, [8681-69]
SPS1, [8681-97] SPS1, [8682-68]
SPS3
Yu, Hangeun [8680-36] S10
Yu, Liya [8682-36] S9Yu, Shinn-Sheng [8679-56] SPS1
Yu, Tianjun [8679-112] SPS1
Yuan, Chi-Min 8684 Program Committee,
8684 S3 Session Chair
Yuan, Qiao [8683-80] SPS1
Yulin, Sergiy [8679-12] S3Z
Zangooie, Shahin [8681-96] SPS1
Zeng, Aijun [8683-80] SPS1, [8683-87]
SPS1
Zhang, Bosheng [8681-17] S4Zhang, Chuanwei [8681-119] SPS2
Zhang, Dong Qing [8683-57] SPS1
Zhang, Dongshi [8680-68] SPS2
Zhang, Haizheng [8681-95] SPS1
Zhang, Hongbo [8684-7] S2Zhang, Liping [8685-14] S4Zhang, Pingping [8681-118] SPS2
Zhang, Shanhua [8683-87] SPS1
Zhang, Xingui [8681-107] SPS1
Zhang, Ying 8685 Conference Chair,
8685 S5 Session Chair
Zhang, Yulin [8681-113] SPS1
Zhang, Yunbo [8683-80] SPS1
Zhao, Hong [8681-114] SPS2, [8681117] SPS2
Zhao, Qiang [8681-101] SPS1
Zheng, Jing [8681-109] SPS1
Zheng, Xin [8679-32] S7
Zhou, CongShu [8683-76] SPS1
Zhou, Han [8682-29] S8Zhou, Hui [8681-13] S4, [8681-31] S9Zhou, Jessica [8681-7] S3Zhou, Ke [8681-60] SPS1
Zhou, Renjie [8681-15] S4Zhu, Cynthia [8683-56] SPS1
Zhu, Linglin [8683-87] SPS1
Zhu, Sherry [8684-25] S8Zou, Yi [8679-30] S7
Zschiedrich, Lin [8681-102] SPS1,[8681-75] SPS1, [8683-47] S11
Zuniga, Christian D. [8683-48] S11
Zurita, Omar [8683-28] S6+1 360 676 3290

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Mask design, production, integration,and next-generation mask technologies

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Conferences & Courses
10–12 September 2013

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