QLF1335-T200Preliminary

1310 nm FP LASER TO-CAN

C00110-02 August 2015

1. DESCRIPTIONThe QLF1335-T200 is 1310 nm quantum dot laser diode device for use in extremely high temperature environment.
The laser is mounted into a TO-56 header including a monitor PD for optical power control and hermetic sealed with alens cap. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent
temperature characteristics and low power consumptions.
2.

FEATURES
 1310 nm FP-LD
 Temperature insensitive operation 5.6mm TO-CAN package
 Wide temperature operation: -25 to 200deg.C

3. APPLICATION
 High temperature use

4.

ABSOLUTE MAXIMUM RATINGPARAMETERLight Output PowerLD Forward Current
LD Reverse Voltage
PD Forward Current
PD Reverse Current
PD Reverse Voltage
Operation Temperature (Tc)
Storage Temperature
Lead Soldering Temperature (5 s)

SYMBOL
PoIF
VRLD
IFPD
IRPD
VRPD
Tc
Tstg
Tsld

1/4(Tc = 25°C, unless otherwise specified)
RATING
UNIT
10mW
300mA
2V
2mA
5mA
10V
-25 to 200
C-40 to 85
C230
C

QLF1335-T2005.

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OPTICAL AND ELECTRICAL CHARACTERISTICSPARAMETERSYMBOLThreshold current

Ith

Operation current

Iop

Operation voltage

Vop

Slope efficiency

Center wavelength

cSpectral width

Monitor current
Focal lengthIm
Df(Tc = 25°C, unless otherwise specified)
TEST CONDITION
MIN
TYP
MAX
UNIT
CW, 25deg.C
1525mACW, 200 deg.C
7085mA
CW, Po=4 mW, 25deg.C
5575mA
CW, Po=2 mW, 200deg.C
120145mA
CW, Po=4 mW
1.21.6V
CW, 25deg.C
0.06
0.10
W/A
CW, 200deg.C
0.02
0.04
W/ACW, Po=4 mW, 25deg.C
1230
1265
1300
nm
CW, Po=4 mW, RMS(-20dB),
2.5
4nm25deg.C
CW, Po=4 mW, VRD=5 V
50240
1000
A
CW, Po=4 mW, SI10/125
6.1
7.1
8.1mm

Notice : Aging test at 200 deg.C is not examined at present.

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QLF1335-T200

6.

TYPICAL L-I CHARACTERISTICS

7.

OUTLINE DRAWING

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All dimensions in millimeters

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QLF1335-T200

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8. NOTICE
 Warrantary period of products
Warrantary period of products is one year from packing date.
 Safety Information
This product is classified as Class 1M laser product, and complies with 21 CFR Part 1040.10.
Please do not take a look laser lighting in operations since laser devices may cause troubles to human eyes.
Please do not eat, burn, break and make chemical process of the products since they contain GaAs material.
 Handling products
Semiconductor lasers are easily damaged by external stress such as excess temperature and ESD.
Please pay attention to handling products, and use within range of maximum ratings.
QD Laser takes no responsibility for any failure or unusual operation resulting from improper handling, or unusualphysical or electrical stress.
 RoHSThis product conforms to RoHS compliance related EU Directive 2011/65/EU.

QD Laser, Inc.
Contact : info@qdlaser.com
http://www.qdlaser.com
Copyright 2013-2015 All Rights Reserved by QD Laser Inc.
Address : Keihin Bldg. 1F 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa Zip 210-0855 JapanAll company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information
provided in this data sheet is accurate at time of publication and is subject to change without advance notice.

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