QLF073A/QLF073D
785 nm FP LASER TO-CAN

C00066-07 April 2017

1. DESCRIPTIONThe QLF073A/QLF073D are 785 nm quantum well laser devices designed for high output power application. Thelaser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.

2.

FEATURES 785 nm FP-LD 5.6mm TO-CAN package
 High output power and high slope efficiency
 Including monitor PD
 Two types of pin assignments: anode common type (QLF073A)/cathode common type (QLF073D)

3. APPLICATIONS Particle inspections
 Measuring instruments

4.

ABSOLUTE MAXIMUM RATINGPARAMETER
Optical output power
LD reverse voltage
PD reverse voltage
Operation temperature
Storage temperature(CW operation, Tc = 25°C, unless otherwise specified)
RATING
UNIT
120mW
280mW
2V30
V
-10 to 70
C-40 to 85
C

SYMBOL
Po(CW)
Po(Pulse) *VRLD
VRPD
Tc
Tstg

*note : Pulse width < 50nsec, Duty < 50%

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QLF073A/QLF073D
OPTICAL AND ELECTRICAL CHARACTERISTICSPARAMETER
Threshold current
Operation current
Operation voltage
Slope efficiency

SYMBOL
IthIopVopΗ

Monitor current

Im

Peak wavelength
Beam divergencehorizontal
Beam divergenceverticalBeam angle
Horizontal
Beam angle
verticalp(Tc = 25°C, unless otherwise specified)
MIN
TYP
MAX
UNIT
3555
mA
135190mA
2.3
2.8
V
0.8
1.0
W/A

TEST CONDITIONCW
CW, Po=100 mW
CW, Po=100 mW
CW, Po=5 - 100 mW
CW, Po=100 mW,
VRD=5 VCW, Po=100 mW
CW, Po=100 mW( FWHM )θh50

190600A775783

795

nm

6912deg.

θv

CW, Po=100 mW( FWHM )131619deg.

ΔθhCW, Po=100 mW-3-3deg.

Δθv

CW, Po=100 mW-3-3deg.

-200204060
Temperature [deg.C]

80-200204060
Temperature [deg.C]

801003.01000

2.0Vop [V]Ith [mA]

Iop [mA]

2.5

100

1.5

1.00.5100.0100204060
Temperature [deg.C]

80

-20

1.21.0Im [uA]

0.8
0.6
0.4

0.2
0.0-200204060
Temperature [deg.C]

800204060
Temperature [deg.C]

80500
450400350300
250
200
150
100500795790
λp [nm]-20h [W/A]5.

C00066-07

785

780

775-200204060
Temperature [deg.C]

2/480

QLF073A/QLF073D

C00066-07120

4.0
Operating voltage [V]Optical power [mW]100
Tc= -10 deg.C

80
Tc=25 deg.C

60
40
Tc=70 deg.C

200

Tc= -10 deg.C

3.0

Tc=25 deg.C

2.0
Tc=70 deg.C

1.0

0.0
050
100
150
200
Operating current [mA]

050
100
150
200
Operating current [mA]300
Tc= 25 deg.C

Tc= 70 deg.C

Monitor current [uA]

Optical intensity [a.u.]

Tc= -10 deg.C

250200
Tc= -10 deg.C

150

Tc=25 deg.C

100
Tc=70 deg.C

500

Optical intensity [a.u.]

775780785790
Wavelength [nm]7950Tc=25 deg.C
Tc=70 deg.C

FFP-v

FFP-h-45-30-15015Angle [deg]

30

45

3/4

20 40 60 80 100 120
Output power [mW]

QLF073A/QLF073D
6.

C00066-07

Outline Drawing

7. Notice Safety Information
This product is classified as Class 3B laser product, and complies with 21 CFR Part 1040.10.
Please do not take a look at laser lighting in operations since laser devices may cause troubles to human eyes.
Please do not eat, burn, break and make chemical process of the products since they contain GaAs material.
 Handling products
Semiconductor lasers are easily damaged by external stress such as excess temperature and ESD. Please pay attention
to handling products, and use within range of maximum ratings. QD Laser takes no responsibility for any failure or
unusual operation resulting from improper handling, or unusual physical or electrical stress.
 RoHSThis product conforms to RoHS compliance related EU Directive 2011/65/EU.
QD Laser, Inc.
Contact : info@qdlaser.com
http://www.qdlaser.com
Copyright 2012-2017 All Rights Reserved by QD Laser, Inc.
Keihin Bldg. 1F 1-1 Minamiwatarida-cho, Kawasaki-ku, Kawasaki, Kanagawa Zip 210-0855 JapanAll company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information
provided in this data sheet is accurate at time of publication and is subject to change without advance notice.

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