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A5888

Silicon PNP transistor epitaxial type
A5888
[ Applications ]Charging circuits, DC-DC converters, MOSFET gate drivers
Motor control, Power switches[ Feature ]Very low collector saturation voltage VCE(sat)= -60mV (Max.) at IC= -1A, IB= -0.1A[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO-50
VCEO-40
VEBO-7.5
IC-5.5
IC-15Tj150
Tstg-55 to 150

UnitVVVAACC[ Electrical characteristics (Ta=25C) ]Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain 1
DC current gain 2
DC current gain 3
DC current gain 4
Collector-emitter saturation voltage 1
Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3
Collector-emitter saturation voltage 4
Collector-emitter saturation voltage 5
Collector-emitter saturation voltage 6
Collector-emitter saturation voltage 7
Collector-emitter saturation voltage 8
Base-emitter saturation voltage 1
Base-emitter saturation voltage 2
Base-emitter on voltage 1
Base-emitter on voltage 2
Transition frequency
Collector output capacitanceTurn on time 1
Turn off time 1
Turn on time 2
Turn off time 2

Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
hFE 1
hFE 2
hFE 3
hFE 4
VCE(sat) 1
VCE(sat) 2
VCE(sat) 3
VCE(sat) 4
VCE(sat) 5
VCE(sat) 6
VCE(sat) 7
VCE(sat) 8VBE(sat) 1
VBE(sat) 2
VBE(on) 1
VBE(on) 2

fT
Cobton 1
toff 1
ton 2
toff 2

Min.
-50-50-40-7.5
200200170
110-Typ.
1525335385
162367Max.
-20-20-20550-30-60-70-165-80-175-175-185-0.9-1.075
-0.85
-0.95
-Unit
VVV
V
nA
nA
nA
mVmVmVmVmVmVmVmVV
V
V
V
MHz
pF
ns
ns
ns
ns

Conditions
IC= -100uA, IE= 0A
IC= -100uA
IC= -10mA, IB= 0A
IE= -100uA, IC= 0A
VCB= -40V, IE= 0A
VCES= -32V
VEB= -6V, IC= 0A
VCE= -2V, IC= -10mA
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -2A
VCE= -2V, IC= -5.5A
IC= -0.1A, IB= -10mA
IC= -1A, IB= -100mA
IC= -1A, IB= -50mA
IC= -1A, IB= -10mA
IC= -2A, IB= -200mA
IC= -2A, IB= -40mA
IC= -3.5A, IB= -175mA
IC= -5.5A, IB= -550mA
IC= -2A, IB= -40mA
IC= -5.5A, IB= -550mA
VCE= -2V, IC= -2A
VCE= -2V, IC= -5.5A
VCE= -10V, IE= 50mA
VCB= -10V, f = 1MHz, IE= 0A

VCC= -10V, IC= -1A-IB1= IB2= -100mA
VCC= -30V, IC= -2A-IB1= IB2= -20mA

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. A5888-20080825- 1/2 -A5888

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Fig.1 IC - VBE(on)at VCE= -2V, Ta= 25C

Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.2 hFE - IC
at VCE= -2V, Ta= 25C

101000

0.1

0.01

0.001
0.50.7

0.9

1.1

Collector-emitter saturation
voltage : -VCE(sat) (mV)

1DC current gain : hFE

Collector current : -IC (A)

1000

100

100.001

Base-emitter on voltage: -VBE(on) (V)

0.01

0.01
0.1
1
10
Collector current : -IC (A)Fig.5 VCE(sat) - IC
at IC/IB= 50, Ta= 25C

Fig.6 VCE(sat) - IC
at IC/IB= 100, Ta= 25C

100.01

0.1

110000
Collector-emitter saturation
voltage : -VCE(sat) (mV)Collector-emitter saturation
voltage : -VCE(sat) (mV)Collector-emitter saturation
voltage : -VCE(sat) (mV)

100100100.001

10Collector current : -IC (A)Fig.7 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

0.10.111100.1

110

Collector current : -IC (A)Collector current : -IC (A)Fig.8 VBE(sat) - IC
at IC/IB= 50, Ta= 25C

Fig.9 fT - IE
at VCE= -10V, Ta= 25C

1000

100

10.10.001

0.01

0.1

110

Collector current : -IC (A)Fig.10 Cob - VCB
at f= 1MHz, Ta= 25C

Fig.11 Cib - VEB
at f= 1MHz, Ta= 25C10001010.001

0.010.1
Emitter current : IE (A)1

Collector input
capacitance : Cib (pF)Collector output
capacitance : Cob (pF)

100

10Collector current : -IC (A)

1000

1000

100.001 0.01

Transition frequency: fT (MHz)

Base-emitter saturation
voltage : -VBE(sat) (V)Base-emitter saturation
voltage : -VBE(sat) (V)
0.01

0.01

1010.10.001

10.001101000

1000

10110

Collector current : -IC (A)Fig.4 VCE(sat) - ICat IC/IB= 20, Ta= 25C

10.001

0.1

100

100

101000.1
110100Collector-base voltage : -VCB (V)

0.1

110
Emitter-base voltage : -VEB (V)

88-20080825
PHENITEC SEMICONDUCTOR Corp.

No. A5888-20080825- 2/2 -