QLF063A-AA /QLF063D-AA
660 nm 50mW FP LASER TO-CAN

C00111-02 July 2016

1. DESCRIPTIONThe QLF063A-AA/QLF063D-AA are 660 nm quantum well laser devices designed for high output power application.
The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.

2.

FEATURES 660 nm FP-LD 5.6mm TO-CAN package
 High output power and high slope efficiency
 Including monitor PD
 Two types of pin assignments: anode common type (QLF063A-AA)/cathode common type (QLF063D-AA)3.


APPLICATIONS
Industrial laser markers
Measuring instruments
Life science applications

4.

ABSOLUTE MAXIMUM RATINGPARAMETER
Optical output power
LD reverse voltage
PD reverse voltage
Operation temperature
Storage temperature

SYMBOL
Po
VRLD
VRPD
Tc
Tstg

1/4

(CW operation, Tc = 25°C, unless otherwise specified)
RATING
UNIT
60mW
2V30V
-10 to 60
C-40 to 85
C

QLF063A-AA/QLF063D-AA

OPTICAL AND ELECTRICAL CHARACTERISTICSSYMBOL
IthIopVopη

Monitor currentIm

Peak wavelength
Beam divergencehorizontal
Beam divergenceverticalBeam angle
Horizontal
Beam angle
verticalp(Tc = 25°C, unless otherwise specified)
MIN
TYP
MAX
UNIT
5570mA
100135mA
2.32.8
V
0.8
1.1
W/A

TEST CONDITIONCW
CW, Po=50 mW
CW, Po=50 mW
CW, Po=5 - 50 mW
CW, Po=50 mW,
VRD=5 VCW, Po=50 mW
CW, Po=50 mW(FWHM)

h25150300

A

655

660

665

nm

71013deg.

v

CW, Po=50 mW(FWHM)

111417deg.

ΔhCW, Po=50 mW-3-3deg.

Δv

CW, Po=50 mW-3-3deg.

-200204060
Temperature [deg.C]

80-200204060
Temperature [deg.C]

80

140

1.41201.21001.0h [W/A]10090807060
50403020100Iop [mA]

Ith [mA]

PARAMETER
Threshold current
Operation current
Operation voltage
Slope efficiency

80600204060
Temperature [deg.C]

0.8
0.6

400.4

20

0.20-2080

0.0-203.03002.5

2502.02000204060
Temperature [deg.C]

80

670

1.5

p [nm]Im [uA]

665

Vop [V]

5.

C00111-02

150

1.0

1000.5506606550.0

6500-200204060
Temperature [deg.C]

80-200204060
Temperature [deg.C]

2/480

QLF063A-AA/QLF063D-AA

C00111-02

4.050

Operating voltage [V]Optical power [mW]60
Tc= -10 deg.C40
Tc=25 deg.C

30
20103.0

Tc= -10 deg.C
Tc=25 deg.C

2.0
Tc=60 deg.C

1.0

Tc=60 deg.C

00.0
0

50
100150Operating current [mA]

Tc= 25 deg.C

50100150Operating current [mA]

Tc= 60 deg.C

Optical intensity [a.u.]

Optical intensity [a.u.]

Tc= -10 deg.C0

Tc=25 deg.C
Tc=60 deg.CFFP-v
FFP-h645

650655 660 665 670
Wavelength [nm]-45675-30-15015Angle [deg]3/43045

QLF063A-AA/QLF063D-AA
6.

C00111-02

OUTLINE DRAWINGS

7. NOTICE Safety Information
This product is classified as Class 3B laser product, and complies with 21 CFR Part 1040.10.
Please do not take a look laser lighting in operations since laser devices may cause troubles to human eyes.
Please do not eat, burn, break and make chemical process of the products since they contain GaAs material.
 Handling products
Semiconductor lasers are easily damaged by external stress such as excess temperature and ESD.
Please pay attention to handling products, and use within range of maximum ratings.
QD Laser takes no responsibility for any failure or unusual operation resulting from improper handling, or unusualphysical or electrical stress.
 RoHSThis product conforms to RoHS compliance related EU Directive 2011/65/EU.
QD Laser, Inc.
Contact : info@qdlaser.com http://www.qdlaser.com
Copyright 2013-2016 All Rights Reserved by QD Laser, Inc.
Keihin Bldg. 1F 1-1 Minamiwatarida-cho, Kawasaki-ku, Kawasaki, Kanagawa Zip 210-0855 JapanAll company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information
provided in this data sheet is accurate at time of publication and is subject to change without advance notice.

4/4