QLF131F-P16Preliminary

1305 nm 16 mW FP LASER DIODE

C00158-01 April 2015

1. DESCRIPTIONQLF131F-P16 is a 1305 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 110
deg.C temperature. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent
temperature characteristics and low power consumptions.

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

FEATURES
1305nm FP-LD Chip
Wide temperature operation: -10 to 110 C

APPLICATION Optical communication

ABSOLUTE MAXIMUM RATINGPARAMETERLight Output PowerLD Forward Current
LD Reverse Voltage
Operation Temperature (Tc)
Storage Temperature *1)
Soldering Temperature (<1.5s)

SYMBOLPoIFVRLD
TcTstg
Tsld*1)no condensation

1 of 4(Tc = 25°C, unless otherwise specified)
RATINGUNIT
22mW
120mA
2V-10 to +110
C-40 to +85
C390
C

QLF131F-P16

C00158-01

5. OPTICAL AND ELECTRICAL CHARACTERISTICS
All chips are screened at 85°C by the criteria shown in the table 5-1, using wafers which pass wafer qualification
process descrived in section 6.
Table 5-1
TESTPARAMETERSYMBOL
Tc
MIN
TYP
MAX
UNIT
CONDITION
25°C
13Threshold current
IthCW
mA
85°C
172525°C
48
Operation current
Iop
CW, Po=16 mW
mA
85°C
689525°C
1.43
Operation voltage
Vop
CW, Po=16 mW
V
85°C
1.37
1.6
25°C
0.33
Slope efficiency
CW
W/A
85°C
0.25
0.30
Saturation power
Psat
CW
85°C
20mW
25°C
1305
CW, Po=16 mW
Center wavelength
cnm
85°C
1325
1335
1353
25°C
2.7
CW, Po=16 mW
Spectral widthnm
RMS(-20dB)
85°C
2.2
Beam divergence angle
//25°C
18deg.
PararellCW, Po=16 mW,
FWHM
Beam divergence angle
⊥
25°C
44deg.
Perpendicular
202.5

Operation voltage [V]CW1510-10 deg.C

25 deg.C

585 deg.C

2.0
1.5
1.0-10 deg.C
25 deg.C
85 deg.C

0.5

110 deg.C

110 deg.C

0.0

050
100
LD Current [mA]
25 deg.C
85 deg.C-45-30CW, 16mW

30126045

2 of 450100
LD Current [mA]

150

CW, 16mW

Horizontal

Vertical-15015Angle [degree]

0150

Optical intensity [20dB/div]

0Optical intensity [10dB/div]

Optical output [mW]CW

+25 °C+85 °C+110 °C-10 °C

1280

1300 1320 1340
Wavelength [nm]

1360

1380

QLF131F-P16

C00158-01

6. WAFER QUALIFICATION
After wafer process, wafers are qualified based on the following criteria in table 6-1, and chips for shipment arescreened from passed wafers.
Table 6-1
Item
Quantity
Criteria
Criteria of Go/No judgment
DB and WB check

DB shear strength> 1.4N
WB pull strength> 0.03N
Condition: 100deg.C, 180mA, 12hrs, ACC
Criteria: ΔIth<+/-1.0mA, ΔIop<+/-10%,Δη<+/-10%

1pc/waferBurn-in≥ 10pcs /wafer

CWcharacteristics≥ 10pcs /wafer

100%
≥ 70%
≥ 70%

Based on table 6-2 at 85-110°C
Table 6-2

Parameter

7.

SymbolTest condition

Threshold current

Ith

Operating current

Iop

Po = 16 mW

Operating voltage

Vop

Po = 16 mW

OUTLINE DRAWING

3 of 4

25°C
85°C
110°C
25°C
85°C
110°C
25°C
85°C
110°C

Min.

Typ.

Max.

-

13
1725
48
68
82
1.43
1.37
1.42

20
2550
80
85
100
1.6
1.6
1.7

Unit

mAmAV

QLF131F-P16C00158-01

8. SHIPPING FORM
LD chips are shipped on an antistatic sheet of 6 inch- ring.
Product name, lot number and quantity are printed on labels.
9. NOTICE OF ASSEMBLING CHIPSLD chips are easily damaged by external stress, such as physical contact, excess temperature and ESD.
QD Laser shall not take any responsibility for reliability and characteristics after assembly.
Please pay attention to handling chips, and use within range of maximum ratings.
(1) Chip handling
When handling LD chips, please do not use tweezers and use a capillary with a head shape to prevent the damage of thechip surface and the mesa structure.
(2) Die and wire bonding
Appropriate conditions should be used for die and wire bonding.
Die should be mounted into an anode-side up configraion. Wire bonding should not be on an mesa structure.
(3) Burn-in
Burn-in can not be done on a chip level. After assembly, burn-in process is recommended to be done.
Suggested condition: Tchip=100deg.C, Iop=180mA, 12hrs,
Criteria: Tchip=25deg.CIth≤+/-1.0mA, Iop≤+/-10%, ≤+/-10%
10. NOTICE Safety Information
This product is classified as Class III-R laser product, and complies with 21 CFR Part 1040.10.
Please do not take a look laser lighting in operations since laser devices may cause troubles to human eyes.
Please do not eat, burn, break and make chemical process of the products since they contain GaAs material.
 Handling products
Semiconductor lasers are easily damaged by external stress such as excess temperature and ESD.
Please pay attention to handling products, and use within range of maximum ratings.
QDL takes no responsibility for any failure or unusual operation resulting from improper handling, or unusual physicalor electrical stress.
 RoHSThis product conforms to RoHS compliance related EU Directive 2011/65/EU.

QD Laser, Inc.
Contact : info@qdlaser.com http://www.qdlaser.com
Copyright 2015 All Rights Reserved by QD Laser Inc.
Address : Keihin Bldg.1F 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa Zip 210-0855 JapanAll company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information
provided in this data sheet is accurate at time of publication and is subject to change without advance notice.

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