1-1ᖱႎ䊂䊋䉟䉴Ꮏቇ․⺰
╙1࿁
CMOS㓸Ⓧ࿁〝᭎ⷰ

1-2⋡⊛䊶 ⃻࿷䈱䌌䌓䌉䈱ਥᵹ䊂䊋䉟䉴䈪䈅䉎䉲䊥䉮䊮CMOS㓸Ⓧ࿁〝䉕ℂ⸃䈜䉎䇯䊶 ⚛ሶ䈱⵾ᴺ䋨䊒䊨䉶䉴䋩䈎䉌േ૞ේℂ䋨䊂䊋䉟䉴䋩䇮⚛ሶ䈱૶䈇ᣇ䋨࿁〝䋩䉁䈪✚ว⊛䈮ℂ⸃䈜䉎䇯

1-3

ඨዉ૕㓸Ⓧ࿁〝LSI : Large Scale Integrated Circuit䉼䉾䊒䉡䉣䊊⃻࿷䈲⋥ᓘ12䉟䊮䉼䋨30cm)
䈱䉡䉣䊊䈏↪䈇䉌䉏䈩䈇䉎䊌䉾䉬䊷䉳䉼䉾䊒

䊪䉟䊟

䊌䉾䉬䊷䉳

1-4
1011

ඨዉ૕㓸Ⓧ࿁〝䈱ᱧผ

1010
109

⚛ሶᢙ䋨୘/䉼䉾䊒䋩

108

3ᐕ䈪4୚

107
106
105
104

ᦨዊടᎿኸᴺ (nm)

1000
100

15ᐕ䈪1/10

10
11965 Moore䈱ᴺೣpMOS

nMOSCMOS䊋䉟䊘䊷䊤䊶䊃䊤䊮䉳䉴䉺⌀ⓨ▤1959 䊒䊧䊷䊅ᛛⴚ1947 䊃䊤䊮䉳䉴䉺
1946 ENIAC

1906 䋳ᭂ⌀ⓨ▤

1900

1910

1920

1930

1940

1950

1962 MOSFET

19601971 䊜䊝䊥䊶䊙䉟䉪䊨䊒䊨䉶䉾䉰1970

1980

1990

2000

2010

1-5䊃䊤䊮䉳䉴䉺䈱ᦨೋ䈱⋡ᮡ䈲㔚⇇ലᨐဳ䊃䊤䊮䉳䉴䉺䋨FET: Field Effect Transistor)䈮䈅䈦䈢⋧ኻᕈ⢻100஧ὼ䊋䉟䊘䊷䊤䊶䊃䊤䊮䉳䉴䉺䉕⊒᣿ (1947)䊒䊨䉶䉴䈱ㅴᱠ䈮䉋䉍 FET 䈱ᕈ⢻䈏ะ਄Bipolar
uni-processor
5ᐕ䈪2୚

10LSI 䈫䈚䈩䈱䊋䉟䊘䊷䊤䊶䊃䊤䊮䉳䉴䉺䈏⚳Ὣ (1990ᐕઍ)⃻࿷䈲䇮䊨䉳䉾䉪࿁〝䊶䉝䊅䊨䉫࿁〝䈫䉅䈮 LSI䈱䊃䊤䊮䉳䉴䉺䈲 CMOSFET䊔䊷䉴 䉣䊚䉾䉺䉮䊧䉪䉺+n 䊔䊷䉴᏷CMOS
uni-processor
5ᐕ䈪10୚
11980

1985

1990
ᐕ

1995

2000

ᄢဳ⸘▚ᯏ䈱ᕈ⢻ផ⒖䉸䊷䉴䉭䊷䊃 䊄䊧䉟䊮n+n+pn-

SiO2n+䉭䊷䊃㐳䋨䉼䊞䊮䊈䊦㐳䋩p䊋䉟䊘䊷䊤䊶䊃䊤䊮䉳䉴䉺pMOSFETn+ : 㜞Ớᐲ n ဳඨዉ૕䇯ඨዉ૕䈫䈚䈩䉋䉍䉅ዉ૕䈱․ᕈ䈏↪䈇䉌䉏䉎

1-6ᦨೋ䈱䉮䊮䊏䊠䊷䉺
ENIAC

http://en.wikipedia.org/wiki/ENIAC

ᦨೋ䈱䊙䉟䉪䊨䊒䊨䉶䉾䉰4004

http://www.4004.com/⃻࿷䈱䊙䉟䉪䊨䊒䊨䉶䉾䉰Core 2 (Penryn)http://www.intel.co.jp/technology/4
5nm/index.htm?iid=tech_sil+45nm⊒⴫ᐕ194619712007⚛ሶᢙ⌀ⓨ▤18,800 ᧄ䊃䊤䊮䉳䉴䉺 2,300 ୘䊃䊤䊮䉳䉴䉺 410,000,000 ୘㕙Ⓧ

1,000,000 cm2 (60⇥䋩

0.12 cm2

1.07 cm2ᶖ⾌㔚ജ

150,000 W

1W65W

ಣℂㅦᐲ

~ 0.05 MIPS

0.06 MIPS

12500 MIPS

1-7nဳMOSFET
Metal-Oxide-Semiconductor Field Effect Transistor

䉸䊷䉴

䉭䊷䊃

䊄䊧䉟䊮

ᄙ⚿᥏䉲䊥䉮䊮

⛘✼⤑䋨㉄ൻ⤑䋩n+n+pၮ᧼䉸䊷䉴 䋺㔚ሶ䉕ଏ⛎䋨source=Ḯ)䉭䊷䊃 䋺ᚺ䋨gate䋩䉕㐿䈒䊄䊧䉟䊮 䋺㔚ሶ䉕ዉ䈒(drain=䈫䈇䊶ਅ᳓▤)SGn+n+P

1-8Dⓨਲጀ+VGSpၮ᧼
SiO2/Si⇇㕙䉣䊈䊦䉩䊷વዉᏪ䊐䉢䊦䊚䊶䉣䊈䊦䉩䊷ଔ㔚ሶᏪ㔚ሶᱜሹ㔚᳇⊛ਛᕈⓨਲጀ 㔚᳇⊛ਛᕈⓨਲጀ 㔚᳇⊛ਛᕈ෻ォጀ⫾Ⓧጀ⫾Ⓧ㗔ၞⓨਲ㗔ၞ෻ォ㗔ၞ䉝䉪䉶䊒䉺䊷䋨⽶䉟䉥䊮䋩㔚ሶᱜሹ

1-9nဳMOSFET䉭䊷䊃 (0V)䉸䊷䉴 䉭䊷䊃 䊄䊧䉟䊮㊄ዻ⛘✼⤑䉸䊷䉴
(0V)

nn

䊄䊧䉟䊮
(> 0V)

䈬䈤䉌䈎䈱䉻䉟䉥䊷䊄䈏ㅒ䊋䉟䉝䉴䈫䈭䉎䈱䈪䉸䊷䉴䊶䊄䊧䉟䊮㑆䈮㔚ᵹ䈏ᵹ䉏䈭䈇p䉭䊷䊃䈮ᱜ䈱㔚࿶䉕ട䈋䉎䈫ඨዉ૕⴫㕙䈮㔚ሶ䈏⺃⿠䈘䉏䉎䉮䊮䊂䊮䉰䊷䈫䈚䈩௛䈒䉭䊷䊃 (1.3V)

+Qnnp

Q

䉸䊷䉴
(0V)

䉸䊷䉴䊶䊄䊧䉟䊮㑆䈮㔚ᵹ䈏ᵹ䉏䉎䉋䈉䈮䈭䉎䊄䊧䉟䊮(> 0V)

1-10pဳMOSFET䉸䊷䉴 䉭䊷䊃 䊄䊧䉟䊮䉭䊷䊃-䉸䊷䉴㑆㔚࿶ = 0V

p+p+n䉭䊷䊃䉸䊷䉴䊄䊧䉟䊮ၮ᧼䉭䊷䊃-䉸䊷䉴㑆㔚࿶ = ⽶㔚࿶䉭䊷䊃䈮⽶㔚࿶䉕ട䈋䉎䈖䈫䈮䉋䉍⇇㕙䈮ᱜሹ䈏⺃⿠䉭䊷䊃䉸䊷䉴䊄䊧䉟䊮䉸䊷䉴䇮䊄䊧䉟䊮 䈬䈦䈤䈏䈬䈦䈤䋿㔚ᵹ䈲䉭䊷䊃-䉸䊷䉴㑆㔚࿶䈪᳿䉁䉍䇮䉭䊷䊃-䊄䊧䉟䊮㑆㔚࿶䈮䈾䈫䉖䈬ଐ䉌䈭䈇

n+n+p䂾 ᒻ䈲ኻ⒓䂾 േ૞䈲ో䈒㆑䈉nMOSFET 䈱႐ว䇮㔚࿶䈏㜞䈇ᣇ䉕 䊄䊧䉟䊮䇮ૐ䈇ᣇ䈏䉸䊷䉴

VD > VSp+p+npMOSFET 䈱႐ว䇮㔚࿶䈏ૐ䈇ᣇ䉕 䊄䊧䉟䊮䇮㜞䈇ᣇ䈏䉸䊷䉴

VD < VSേ૞䈮䉋䈦䈩䈲ᤨ㑆䈫઻䈮䉸䊷䉴䊶䊄䊧䉟䊮䈏౉䉏ᦧ䉒䉎䈖䈫䉅

1-11

1-12

CMOS (Complementary MOS)ห৻ၮ᧼䈮 nMOSFET 䈫 pMOSFET 䉕㓸Ⓧ
B

S

p+n+G

D

S

n+p+G

D

B

p+n+npnMOSFETpMOSFETㅢᏱ p ၮ᧼䇮 n-WELL䈖䈱႐ว䇮nMOSFET 䈱ၮ᧼㔚૏ VB 䈲䈜䈼䈩䈱 nMOSFET 䈪౒ㅢpMOSFET 䈱ၮ᧼㔚૏ VB 䈮㑐䈚䈩䈲䇮䈠䉏䈡䉏䈱 pMOSFET 䈮⁛┙䈚䈢䊋䉟䉝䉴䉕ട䈋䉎䈖䈫䈏䈪䈐䉎䈏䇮ᄢ䈐䈭ኈ㊂䈏ઃ䈒䈢䉄㜞ㅦ䈮ᄌൻ䈘䈞䉎䈖䈫䈏䈪䈐䈝䇮䉁䈢േ૞䈏ਇ቟ቯ䈮䈭䉍䉇䈜䈇ㅢᏱ䈲 nMOSFET 䈱ၮ᧼㔚૏ VB 䈲ᦨ䉅ૐ䈇㔚Ḯ㔚࿶䈮䇮pMOSFET䈱 VB 䈲ᦨ䉅㜞䈇㔚Ḯ㔚࿶䈮ធ⛯䈚䇮䈜䈼䈩䈱 nMOSFET 䇮䈜䈼䈩䈱pMOSFET 䈪౒ㅢ䈫䈜䉎

1-13

CMOS 䊃䊤䊮䉳䉴䉺⸥ภ
B

S

p+n+G

D

Sn+p+G

D

B

p+p+npnMOSFETpMOSFET
DSGnpn, pnp䈫䈱ኻᔕ䈪䊋䉟䊘䊷䊤䊶䊃䊤䊮䉳䉴䉺࿁〝䈮ᘠ䉏䈢ੱ䈮䈲䈭䈛䉂ᤃ䈇䋮ᧄ⻠⟵䈲䈖䈱⸥ᴺ䉕↪䈇䉎

G
S

D

DS

G

B

B

GS

D

DS

GG
S

D= pn඙೎䈏ઃ䈐ᤃ䈒䇮ᦠ䈐ᤃ䈇䊂䉞䉳䉺䊦࿁〝⊛䈭⸥ᴺ

⋧⵬ဳMOS࿁〝CMOS(Complementary Metal-Oxide-Semiconductor)
䉟䊮䊋䊷䉺
VDD

VDD :㔚Ḯ㔚࿶pMOSFET䉭䊷䊃䊶䉸䊷䉴㑆㔚࿶vIN

VDD

vOUTnMOSFET䉭䊷䊃䊶䉸䊷䉴㑆㔚࿶

VSS :ធ࿾0

VDD VDDVSS

1-14

VSS0䋫VSSVSSᵈ䋩ᧄ⻠⟵䈪䈲䇮⍫ශ䈱వ䈎䉌ర䈱୯䈱Ꮕ䉕䇮⍫ශ䈱୯䈫䈜䉎V2

V

V1V = V1  V2⋧⵬ဳMOS࿁〝CMOS (Complementary Metal-Oxide-Semiconductor)䉟䊮䊋䊷䉺
VDD :㔚Ḯ㔚࿶

1-15

vOUT

VDD
vIN

vOUT

VSS
VSS

VDDvINVSS :ធ࿾
౉ജ㔚࿶䈏ᄙዋᄌേ䈚䈩䉅৻ቯ䈱಴ജ䈏ᓧ䉌䉏䉎

1-16䊃䊤䊮䉳䉴䉺䉕૶䈦䈩䈇䉐䈇䉐䈭㔚ሶ࿁〝䉕᭴ᚑ䈪䈐䉎䊨䉳䉾䉪࿁〝䉝䊅䊨䉫࿁〝䊜䊝䊥࿁〝

1-17䈖䈱䉋䈉䈭ඨዉ૕㓸Ⓧ࿁〝䈲䈬䈱䉋䈉䈮䈚䈩૞䉌䉏䉎䈱䈣䉐䈉䈎䋿䉼䉾䊒

~ 1 cm䉡䉣䊊⃻࿷䈲⋥ᓘ12䉟䊮䉼䋨30cm)
䈱䉡䉣䊊䈏↪䈇䉌䉏䈩䈇䉎ⶄᢙ䈱䉡䉣䊊䋨଀䋺䋲䋵ᨎ䋩䉕න૏䋨䊨䉾䊃䈫๭䈹䋩䈮⵾૞

1-18䉲䊥䉮䊮䊶䉡䉣䊊䈱⵾ᴺ⒳⚿᥏ᄙ⚿᥏䉲䊥䉮䊮䋨䊅䉭䉾䊃䋩න⚿᥏䂓න⚿᥏ᒁ䈐਄䈕䋨CZᴺ䋺䉼䊢䉪䊤䊦䉴䉨䊷ᴺ䋩CZᴺ䈪䈲䇮ᒁ䈐਄䈕ⵝ⟎ౝ䈮䊍䊷䉺䊷䇮⍹⧷䊦䉿䊗䇮ᄙ⚿᥏䉲䊥䉮䊮䉕䉶䉾䊃䈚䇮ਇᵴᕈ㔓࿐᳇䈱ᷫ࿶ਅ䈪ടᾲṁⲢ䈚䇮⒳⚿᥏䉕ઃ䈔䈩ᓢ䇱䈮ᒁ䈐਄䈕䉎䈖䈫䈪න⚿᥏䉕⢒ᚑ䈚䉁䈜䇯⍹⧷䊦䉿䊗䂓න⚿᥏䉲䊥䉮䊮䉟䊮䉯䉾䊃⢒ᚑ䈱ቢੌ䈚䈢න⚿᥏䉲䊥䉮䊮䉟䊮䉯䉾䊃䈲䇮䈖䈱᭽䈭ᒻ⁁䉕䈚䈩䈇䉁䈜䇯
㱢200mm䉡䉢䊷䊊↪䈱⚿᥏䈱႐ว䇮䉟䊮䉯䉾䊃৻ᧄ䈱㊀㊂䈲60䌾100kg䈮䉅䈭䉍䉁䈜䇯䂓ᄖ๟⎇೥ടᎿⷙቯ䈱㐳䈘䈮ಾᢿ䈚䇮ⷙቯ䈱⋥ᓘ䈮ᄖ๟䉕⎇೥䈚䉁䈜䇯ᄖ๟䈱৻ㇱ䈮⚿᥏ᣇ૏䉕␜䈜ᐔ㕙䋨䉥䊥䉣䊮䊁䊷䉲䊢䊮䊐䊤䉾䊃䋺䉥䊥䊐䊤䋩䈎䇮Ḵ䋨䊉䉾䉼䋩䉕ઃਈ䈚䉁䈜䇯䂓䉴䊤䉟䉴ടᎿ

http://www.sumcosi.com/products/process/step_01.html

䉟䊮䉯䉾䊃䉕㤥㋦䈱଻ᜬᴦౕ䈮ធ⌕䈚䇮࿁ォ䈜䉎ౝ๟಺䉻䉟䉝䊝䊮䊄䊑䊧䊷䊄䈪1ᨎ䈨䈧ಾᢿ䈚䉁䈜䇯㱢200mmએ਄䈱䉴䊤䉟䉴ടᎿ䈪䈲䊪䉟䊟䊷䉸䊷䈻⒖ⴕ䈚䈧䈧䈅䉍䉁䈜䇯ඨዉ૕䈱Ꮏ⒟ᚑ⤑䊧䉳䉴䊃ႣᏓ㔺శ⃻௝䉣䉾䉼䊮䉫䉟䉥䊮䉟䊮䊒䊤
䊧䉳䉴䊃㒰෰

1-19

1-20

ᚑ⤑
CVD (Chemical Vapor Deposition)ൻቇ᳇⋧ᚑ㐳ᴺ

700-1000㷄䊶ᾲ䊶䊒䊤䉵䊙䊶శ䊍䊷䉺䊷䉲䊥䉮䊮䊶䉡䉣䊊

O2, H2O⍹⧷᫔䉕૶䈦䈩಴౉⍹⧷⩲ൻቇ෻ᔕේᢱ䉧䉴ᾲ㉄ൻ⌀ⓨឃ᳇↢ᚑ⤑tox䉲䊥䉮䊮䊶䉡䉣䊊䉲䊥䉮䊮㉄ൻ⤑ (SiO2)
䉲䊥䉮䊮䉼䉾䉦⤑ (Si3N4)䉲䊥䉮䊮 (Si)O2 Si O2SiO2㉄ൻ೨
䈱Si⴫㕙

0.44tox䊖䊃䊥䉸䉫䊤䊐䉞䊷䋨Photolithography䋩

1-21

ේℂ䈲౮⌀䈫ห䈛䊖䊃䊧䉳䉴䊃

䊖䊃䊧䉳䉴䊃 䋨ᗵశ೷䋩䉕ႣᏓశ䋨⚡ᄖ✢䋩
䊖䊃䊙䉴䉪䉕タ䈞䈩
㔺శ䈜䉎

䊖䊃䊙䉴䉪
⍹⧷

䊖䊃䊙䉴䉪䈱଀䈖䈱଀䈪䈲䊧䊮䉵䉕ㅢ䈚䈩䊙䉴䉪䊌䉺䊷䊮䉕1/5䈮❗ዊ䈚䈩㔺శ䈜䉎䋮䊖䊃䊙䉴䉪䈮䈲䊕䊥䉪䊦䈫๭䈳䉏䉎㒐Ⴒ䉦䊋䊷䈏⌕䈔䉌䉏䈩䈇䉎䋮䊕䊥䉪䊦㕙䈲䊧䊮䉵䈱ὶὐ䈎䉌䈝䉏䈩䈍䉍䊖䉮䊥䉇䉼䊥䈏⌕䈇䈩䉅䊧䉳䉴䊃਄䈮⚿௝䈚䈭䈇㊄ዻ⭯⤑䋨శ䉕ㅢ䈘䈭䈇䋩ᗵశ䈚䈢䊖䊃䊧䉳䉴䊃䈲⃻௝ᶧ䈮ṁ䈔䉎䉋䈉䈮ᄌൻ䋨䊘䉳䋩

⃻௝Siၮ᧼ᱷ䈦䈢䊖䊃䊧䉳䉴䊃䉕䊙䉴䉪䈮䈚䈩䇮䈇䉐䈇䉐䈭ടᎿ䉕䈜䉎

1-22䉣䉾䉼䊮䉫䉡䉢䉾䊃䉣䉾䉼䊮䉫ൻቇ⮎ຠ䈮ᶐ䈜ฬ⒓⚵ᚑ䉣䉾䉼ㅦᐲ㉄ൻ⤑䉣䉾䉼䊐䉾ൻ䉝䊮䊝䊆䉡䊛䋺䊐䉾㉄ = 7 : 1 (25㷄)SiO2 100 nm/min᳓䋺䊐䉾㉄ = 10 : 1 (25㷄)SiO2 35 nm/min⎣㉄䋺䊐䉾㉄ = 100:1

Si 100 nm/min䉲䊥䉮䊮䉣䉾䉼

KOH:᳓ = 4:6䊄䊤䉟䉣䉾䉼䊮䉫෻ᔕᕈ䉟䉥䊮䉣䉾䉼䊮䉫
RIE (Reactive Ion Etching)䊒䊤䉵䊙N+䉡䉣䊊+ +Si 25 nm/min(111)㕙䈲䉣䉾䉼䊮䉫䈘䉏䈭䈇㒶ᭂᛴ᳓䊍䊄䊤䉳䊮䋺䉟䉸䊒䊨䊌䊉䊷䊦䋺䊃䊥䊃䊮X =500:50:1 (50㷄)

Si 8~18 nm/min䊅䉟䊃䊤䉟䊄⤑䉣䉾䉼䊥䊮㉄ ( 160-180㷄)

Si3N4 5nm/min䊶෻ᔕቶౝ䈪䉣䉾䉼䊮䉫䉧䉴䈮㔚⏛ᵄ䈭䈬䉕ਈ䈋䊒䊤䉵䊙ൻ䈜䉎䊶䉡䉣䊊䉕⟎䈒㒶ᭂ䈮㜞๟ᵄ㔚࿶䉕ශട䈜䉎䊶⹜ᢱ䈫䊒䊤䉵䊙䈱㑆䈮⥄Ꮖ䊋䉟䉝䉴㔚૏䈏↢䈛䇮䊒䊤䉵䊙ਛ䈱Al 䉣䉾䉼

䊥䊮㉄䋺᳖㈶㉄䋺⎣㉄䋺᳓= 75:15:5:5

Al 50 nm/min

䉟䉥䊮⒳䉇䊤䉳䉦䊦⒳䈏⹜ᢱᣇะ䈮ടㅦ䈘䉏䈩ⴣ⓭䈜䉎䊶䉟䉥䊮䈮䉋䉎䉴䊌䉾䉺䊥䊮䉫䈫䇮䉣䉾䉼䊮䉫䉧䉴䈱ൻቇ෻ᔕ䈏หਇ⚐‛Ớᐲ䈮ଐሽᤨ䈮⿠䈖䉍䇮䉣䉾䉼䊮䉫䈏ⴕ䈋䉎

1-23䉟䉥䊮䊶䉟䊮䊒䊤䋨䉟䉥䊮ᵈ౉䋩⾰㊂ಽᨆ䊙䉫䊈䉾䊃ടㅦ⩲ ྾ᭂሶ䊧䊮䉵䉣䊮䊄䉴䊁䊷䉲䊢䊮䉟䉥䊮Ḯ 䉧䉴䊗䊃䊦 䉪䊤䉟䉥䊘䊮䊒䉸䊷䉴䊙䉫䊈䉾䊃䇸䉟䉥䊮ᛂ䈤ㄟ䉂䇹䈫䉅⸒䈉䉟䉥䊮Ḯ䋺䉧䉴䈱䉟䉥䊮ൻ䉸䊷䉴䊙䉫䊈䉾䊃 䋺䉧䉴䈱䉟䉥䊮ൻല₸䉕㜞䉄䉎䈢䉄䇮⏛⇇䉕ട䈋䉎⾰㊂ಽᨆ䊙䉫䊈䉾䊃䋺⏛⇇䉕↪䈇䈩ᔅⷐ䈭䉟䉥䊮䉕ㆬ䈹ടㅦ▤䋺䉟䉥䊮䊎䊷䊛䈮ᔅⷐ䈭䉣䊈䊦䉩䊷䉕ਈ䈋䉎䋨䋲䋰䌾䋲䋰䋰䌋䌥䌖䋩྾ᭂሶ䊧䊮䉵䋺ᐢ䈏䈦䈢䊎䊷䊛䉕䇮⏛⇇䈮䉋䉍⛉䉍ㄟ䉃䉴䉨䊞䊮䋺䉡䉣䊊ో㕙䈮ဋ৻䈮䉟䉥䊮䊎䊷䊛䈏ᒰ䈢䉎䉋䈉䈮⏛⇇䈮䉋䉍਄ਅᏀฝ䈮䊎䊷䊛䉕േ䈎䈜䊐䉜䊤䊂䊷䉦䉾䊒䋺䊎䊷䊛䈱䉟䉥䊮ᢙ䉕⸘᷹

http://www1.ocn.ne.jp/~raichi/test/raichi/timp/timp.html

䉟䉥䊮䋨B, P, As ╬䋩B 䈱႐ว

P, As 䈱႐วpဳඨዉ૕nဳඨዉ૕⴫㕙䈮⭯䈇㉄ൻ⤑䉕䈧䈔䈩䈍䈒䈖䈫䈏ᄙ䈇䉟䊮䊒䊤ᓟ䇮䊄䊷䊌䊮䊃䈏Siේሶ䈫⟎឵䈚䈩⚿᥏᭴ㅧ䉕᭴ᚑ䈜䉎䈖䈫䈏ᔅⷐ䇯䈖䈱䈢䉄㜞᷷ಣℂ(700㷄-1000㷄䋩䉕ⴕ䈉㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧ1-24ᐔ㕙䊃䊤䊮䉳䉴䉺䈱㈩⟎䈲૗ᨎ䈎䈱䊖䊃䊙䉴䉪䈱䊌䉺䊷䊮䉕ォ౮䈜䉎䈖䈫䈮䉋䉍ᒻᚑ䈘䉏䉎䇯n ဳඨዉ૕䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕LSI䈱⸳⸘䋺䊙䉴䉪䊌䉺䊷䊮䋨䊧䉟䉝䉡䊃䋩䈏㊀ⷐ䈭ⷐ⚛
䊒䊨䉶䉴䉕⍮䉌䈭䈇䈫⸳⸘䈪䈐䈭䈇䈖䈫䈏ᄙ䈇䇯㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧ

1-25
䊖䊃䊙䉴䉪

ᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕㫅ဳඨዉ૕p ဳඨዉ૕䊖䊃䊥䉸䉫䊤䊐䉞䊷䉣䉾䉼䊮䉫㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧ1-26

ᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕

⛘✼⤑䊂䊘䉳䉾䉲䊢䊮⎇⏴ 㩿㪚㪤㪧㪀
STI : shallow trench isolation㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧ1-27

ᐔ㕙n ဳඨዉ૕䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕

䉲䊥䉮䊮⴫㕙㉄ൻᄙ⚿᥏䉲䊥䉮䊮䊶䊂䊘䉳䉾䉲䊢䊮㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧᐔ㕙n ဳඨዉ૕䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕䊖䊃䊥䉸䉫䊤䊐䉞䊷䉣䉾䉼䊮䉫

1-28㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕

䉟䉥䊮䊶䉟䊮䊒䊤

1-29㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕

⛘✼⤑䊂䊘䉳䉾䉲䊢䊮

1-30㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕

䊖䊃䊥䉸䉫䊤䊐䉞䊷
䉣䉾䉼䊮䉫

1-31

㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕㊄ዻ䊂䊘䉳䉾䉲䊢䊮1-32㪤㪦㪪㩷䊃䊤䊮䉳䉴䉺䈱⵾ㅧᐔ㕙n ဳඨዉ૕
䋨ᄙ⚿᥏䉲䊥䉮䊮䋩ᢿ㕙㊄ዻ(Al)⛘✼⤑(SiO2)

㫅ဳඨዉ૕

㫅ဳඨዉ૕

p ဳඨዉ૕

䊖䊃䊥䉸䉫䊤䊐䉞䊷䉣䉾䉼䊮䉫

1-33

1-34
㓸Ⓧᐲ䉕਄䈕䉎䈮䈲䊃䊤䊮䉳䉴䉺䉕ዊ䈘䈒䈚䈩䈇䈎䈭䈔䉏䈳䈭䉌䈭䈇
1mmᦨዊടᎿኸᴺ (nm)㪈㪇㪇㪇㪇㪇㪈㪇㪇㪇㪇㪈㪇㪇㪇⃻࿷䋺45nm㪈㪇㪇㪈㪇㪈
㪇㪅㪈
㪈㪐㪎㪇

Siᩰሶቯᢙ
䋨Siේሶ㑆〒㔌䋩㪈㪐㪏㪇㪈㪐㪐㪇㪉㪇㪇㪇⷏ᥲᐕ㪉㪇㪈㪇㪉㪇㪉㪇

1-35ᓸ⚦ൻ䈮઻䈦䈩ᄙ䈒䈱໧㗴䈏಴䈢䈏᭽䇱䈭ᣇᴺ䈪࿁ㆱ䉲䊥䉰䉟䊄䊶㊄ዻ䉸䊷䉴/䊄䊧䉟䊮䉭䊷䊃㐳

Si3N4 self-aligned S/D contactHigh-k䉭䊷䊃⛘✼⤑SiO2㸢SiON, Al2O3, HfO2, ZrO2

pocket
LDD(Lightly Doped Drain)
ᱡSi

ᛶ᛫ૐᷫ
㕙Ⓧ❗ዊ
䉭䊷䊃䊶䊥䊷䉪
㔚ᵹૐᷫ
㔚⇇✭๺

ᒁᒛജ

ᱡSiጀ
SiGeጀ

ᒁᒛജ䈮䉋䉎
㔚ሶ䈱ㅦᐲჇᄢ

1-366nm
Siේሶ15୘䉕ਗ䈼䈢㐳䈘⎇ⓥᚲ䈪䉭䊷䊃㐳 6nm 䈱䊃䊤䊮䉳䉴䉺䈏⹜૞䈘䉏േ૞䉕⏕⹺ዋ䈭䈒䈫䉅2025䉁䈪䈲⃻࿷䈱 LSI 䈱ㅴᱠ䈲⛯䈒ᦨዊടᎿኸᴺ (nm)B. Doris, et al. (IBM),International Electron Device Meeting (IEDM)
Technical Digest, 10.6, 20021mm㪈㪇㪇㪇㪇㪇䉭䊷䊃㐳 6nm

㪈㪇㪇㪇㪇㪈㪇㪇㪇⃻࿷䋺45nm
㪈㪇㪇㪈㪇㪈㪇㪅㪈㪈㪐㪎㪇Siᩰሶቯᢙ䋨Siේሶ㑆〒㔌䋩㪈㪐㪏㪇㪈㪐㪐㪇㪉㪇㪇㪇⷏ᥲᐕ㪉㪇㪈㪇㪉㪇㪉㪇

1-37⃻࿷䈱LSI䈲㈩✢ᒻᚑ䈮⵾ㅧ䈱ඨಽએ਄䈏䈎䈎䈦䈩䈇䉎㈩✢䈮㑐䈜䉎ᛛⴚ⊛䈭⺖㗴䉅ᄢ䈐䈇
M6M5VIA 䋨਄ਅ䈱㈩✢䉕ធ⛯䋩

㈩✢M4M3M2
M1n+n+p䊃䊤䊮䉳䉴䉺p+p+n