PROGRAM【November 8th, Wednesday】
Opening Session (13:00-13:10)
Plenary Session (13:10-14:00)
Chair : J. Motohisa (Hokkaido University)・・・

1

We1-1 [Invited] 14:00 (30min+poster)Control of light emimssion propertiese using photonics crystal and recent progresss in the related topics
S. Iwamoto, Y. Ohta, S. Takahashi, T. Tajiri and Y. Arakawa
The University of Tokyo

・・・

3

We1-2
14:30 (3min+poster)
Coupling eficiency between a circular defect (CirD) resonator and a waveguide in 2D slab photonic crystal
Y. Miyamoto, M. Morifuji, H.Kajii and M. Kondow
Osaka University

・・・

5

We1-3
14:33 (3min+poster)
Photonic crystal microcavity laser with low-quality factor
Y. Xiong, X. Zhang, E. He, R. Tezuka, T. Hino, S. Kasamatsu, M. Morifuji, H. Kajii and M. Kondow
Osaka University

・・・

7

We1-4
14:36 (3min+poster)Surface-processed photonic-crystal lasers for generating optical vortex beam
M. Kitazawa*, K. Kitamura*,** and S. Noda***Kyoto Institute of Technology, **Kyoto University

・・・

11

We1-5
14:39 (3min+poster)
Selective inductively coupled plasma etching of GaAs/AlOx films having photonic crystal structure
intended to realize current driven nanolaser
Y. Tani, X. Cong, Y. Xiong, M. Morifuji, H. Kajii, A. Maruta and M. Kondow
Osaka University

・・・ 13

We1-6
14:42 (3min+poster)
Circularly polarized spontaneous emission in semiconductor-based three-dimensional chiral photonic crystals
S. Takahashi*,**, Y. Ota*, T. Tajiri*, J. Tatebayashi*, S. Iwamoto* and Y. Arakawa**The University of Tokyo, **Kyoto Institute of Technology

・・・ 15

We1-7
14:45 (3min+poster)
GaAsP quantum well single-mode semiconductor laser with periodically slotted structure
S. Kusumoto, M. Uemukai and R. Katayama
Osaka University

・・・ 17

We1-8
14:48 (3min+poster)
Characterizing tail states of GaAsBi photodiodes by their spectral response
K. Kakuyama, K. Suzuki, S. Hasegawa, H. Nishinaka and M.Yoshimoto
Kyoto Institute of Technology

・・・ 19We1-9
14:51 (3min+poster)
Efficient carrier collection of up-converted electrons in two-step photon up-conversion solar cells
S. Asahi, K. Nishimura, K. Kusaki, T. Kaizu and T. Kita
Kobe University

・・・ 21Plenary
13:10 (50min)
HVPE growth of the group III nitrides
A. Koukitsu, Y. Kumagai and H. Murakami
Tokyo University of Agriculture and Technology

Session We1: Photonic Materials (14:00-15:06)
Chair : J. Motohisa (Hokkaido University)We1-10
14:54 (3min+poster)
Demonstration of InGaAs nanowire array photodiode on Si substrate
K. Chiba, A. Yoshida, K. Tomioka and J. Motohisa
Hokkaido University

・・・

23

We1-11
14:57 (3min+poster)
Lasing in a single GaAs nanowire with InGaAs/GaAs quantum dots embedded in flexible substrates
J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto and Y. Arakawa
The University of Tokyo

・・・

25

We1-12
15:00 (3min+poster)
Ultraviolet Stark effect optical modulators using non-polar ZnO/ZnMgO multiple quantum wells
T. Abe, S. Iwagashita, D. Kimura, H. Kasada, K. Ando and K. Ichino
Tottori University

・・・

27

We1-13
15:03 (3min+poster)Development of ZnSe-based organic-inorganic hybrid ultraviolet avalanche photodiodes
K. Tanaka, S. Uchida, T. Kawahara, Y. Ichikawa, K. Nakagawa, T. Abe, H. Kasada, K. Ando, K. Ichino and K. Akaiwa
Tottori University

・・・

29

We2-1 [Invited] 15:16 (30min+poster)Novel approaches of conductivity controls in nitride semiconductors – tunnel junctions and polarization doping T. Takeuchi*, M. Iwaya*, S. Kamiyama*, and I. Akasaki*,***Meijo University, ** Nagoya University

・・・

31

We2-2
15:46 (3min+poster)Thick GaN and AlGaN growth by solid-source tri-halide vapor phase epitaxy
H. Murakami, M. Takahashi and A. Koukitu
Tokyo University of Agriculture and Techonology

・・・ 35

Break (15:06-15:16)
Session We2: Nitrides (15:16-16:16)
Chair : M. Funato (Kyoto University)We2-3
15:49 (3min+poster)・・・ 37Fabrication of large-size, macro-defect-free GaN substrates with small off-angle variatons by void-assisted separation method
T. Fujimoto, T. Suzuki, T. Kitamura, T. Konno, H. Fujikura, T. Yoshida and S. Fujio
SCIOCS Co. Ltd.
We2-4
15:52 (3min+poster)
Improvement of GaN crystallinity in OVPE growth using carbothermal reduction of Ga 2O3
Y. Yamaguchi*, S. Tsuno*, K. Ishibashi*, Y. Gunji*, H. Kobayashi*, N. Murashima*, T. Oshiba*,
Y. Sakamoto*, A. Kitamoto*, M. Imanishi*, M. Imade*, M. Yoshimura*, M. Isemura** and Y. Mori**Osaka University, **Itochu Plastics Inc.

・・・ 39We2-5
15:55 (3min+poster)
Effect of H2 carrier gas on the growth of thick GaN layers by Oxide Vapor Phase Epitaxy
Y. Gunji*, Y. Yamaguchi*, K. Ishibashi*, S. Tsuno*, A. Kitamoto*, M.Imanishi*, M. Imade*,
M. Yoshimura*, M. Isemura** and Y. Mori**Osaka University, **Itochu Plastics Inc.

・・・ 41

We2-6
15:58 (3min+poster)
Effects of NH3/H2/ ratio on the polycrystal formation during GaN growth using OVPE method
S. Tsuno*, Y. Gunji*, Y. yamaguchi*, K. Ishibashi*, A. Kitamoto*, M. Imanishi*, M. Imade*,
M. Yoshimura*, M. Isemura**, T. Sumi***, J. Takino*,***, Y. Okayama*,***, M. Nobuoka*** and Y. Mori**Osaka University, **Itochu Plastics Inc., ***Panasonic Corporation

・・・ 43We2-7
16:01 (3min+poster)Growth of GaN crystals by OVPE method with a three-layer flow gas injection reactor
K. Ishibashi, H. Kobayashi, T. Oshiba, S. Tsuno, Y. Gunji, Y. Yamaguchi, A. Kitamoto, M. Imanishi,
M. Imade, M. Yoshimura, M. Isemura and Y. Mori
Osaka University

・・・ 45

We2-816:04 (3min+poster)
Enlargement of transparent region of GaN crystals by thin-flux-growth in Na-flux point seed technique
M. Hayashi, M. Imanishi, K. Murakami, M. Maruyama, M. Imade, M. Yoshimura and Y. Mori
Osaka University

・・・

47

We2-9
16:07 (3min+poster)
Effects on Yields and Surface Morphology of GaN Crystal using Cyanide Addition in Na-flux Method
N. Takeda, M. Imanishi, T. Yamada, M. Hayashi, K. Murakmi, K. Kakinouchi, M. Imade and Y. Mori
Osaka University

・・・

49

We2-10
16:10 (3min+poster)
Influence of Sapphire thickness on GaN wafer bowing grown by the Na-flux method with sapphire dissolution process
T. Yamada, K. Murakami, K. Nakamura, T. Kitamura, K. Kakinouchi, K. Okumura, M. Imanishi, M. Imade,M. Yoshimura and Y. Mori
Osaka University

・・・

51

We2-11
16:13 (3min+poster)
The Evaluation of carrier concentration on Na-flux-grown GaN crystals by capacitance-voltage (C-V) measurements
K. Endo, R. Kuramoto, T Yamada, M. Imanishi, H. Kubo, M. Imade and Y. Mori
Osaka University

・・・

53

We3-1
16:16 (3min+poster)Control of Ga2O3 crystal structures by alpha-(AlxGa1-x)2O3 buffer layers
R. Jinno, T. Uchida, K. Kaneko and S. Fujita
Kyoto University

・・・

55

We3-2
16:19 (3min+poster)MSM-type solar-blind photodetector with -Ga2O3 film grown by mist CVD
K. Rikitake, T. Kobayashi, T. Yamaguchi, T. Onuma and T. Honda
Kogakuin University

・・・

57

We3-3
16:22 (3min+poster)Growth of -Ga2O3 by mist CVD using carbon-free sources
S. Nakamura, K.Uno and I. Tanaka
Wakayama University

・・・

59

We3-4
16:25 (3min+poster)
The epitaxial growth of -Ga2O3 thin films by mist chemical vapor deposition using the GaCl3 precursor solutions
S. Morimoto, D. Tahara, N. Miyauchi, H. Nishinaka and M. Yoshimoto
Kyoto Institute of Technology

・・・

61

We3-5
16:28 (3min+poster)
Epitaxial growth of -Al2xGa2-2xO3 alloy films on c-plane AlN templates by mist chemical vapor deposition
D. Tahara, H. Nishinaka, S. Morimoto, N. Miyauchi and M. Yoshimoto
Kyoto Institute of Technology

・・・

63

We3-6
16:31 (3min+poster)
Alloying of -In2xGa2-2xO3 epitaxial thin films grown on AlN templates by mist-CVD
N. Miyauchi, D.Tahara, S.Morimoto, H.Nishinaka and M.Yoshimoto
Kyoto Institute of Technology

・・・

65

We3-7
16:34 (3min+poster)
Effect of low temperature buffer layer in mist CVD growth of In 2O3 on -Al2O3 substrate
T. Kobayashi, T. Yamaguchi, T. Onuma and T. Honda
Kogakuin University

・・・

67

We3-8
16:37 (3min+poster)Study on the effect of solvents on fabricating ZnO thin films by solution-based mist chemical vapor deposition
M. Nishi, L. Liu, P. Rutthongjan, S. Sato, M. Sakamoto, Y. Kobayashi, M. Ueda, E. K. C. Pradeep,
G. T. Dang and T. Kawaharamura
Kochi University of Technology

・・・

69

Session We3: Oxide Materials (16:16-16:52)
Chair : T. Kawaharamura (Kochi University of Technology)

We3-916:40 (3min+poster)Tailoring rate limiting process and growth interface of hydrothermal zinc oxide nanowire growth
K. Nagashima*, D. Sakai*, H. Yamashita*, G. Zhang*, X. Zhao*, T. Takahashi*, H. Yoshida*, M. Kanai*,
S. Takeda** and T. Yanagida**Kyushu University, **Osaka University

・・・

71

We3-10
16:43 (3min+poster)
The effect of mist on the fabrication of metal oxide thin films
M. Sakamoto*, L. Liu, S. Sato, P. Rutthongjan, M. Nishi, Y. Kobayashi, M. Ueda, E. K. C. Pradeep,
G. T. Dang and T. Kawaharamura
Kochi University of technology

・・・

73

We3-11
16:46 (3min+poster)High mobility p-type Cu2O thin films grown by mist chemical vapor deposition method
T. Ikenoue, T. Kawai, R. Wakashima, M. Miyake and T. Hirato
Kyoto University

・・・

75

We3-12
16:49 (3min+poster)
Epitaxial growth of SnO2 layers on c-plane sapphire by mist CVD
T. Okumura, H. Nishinaka and M. Yoshimoto
Kyoto Institute of Technology

・・・

77

Break (16:52-17:02)

Poster Session I (We1, We2, We3) (17:02-19:00)

Dinner (19:00-20:00)

Rump Session (20:00-21:30)“Does your research link with business?”
Organizer:

R. Katayama
H. Miyake7(Osaka University)(Mie University)

Panelists:

M. Ippommatsu
Y. Otoki
K. Domen
A. Nishikawa
Y. Mori(UV Craftory Co. Ltd.)(SCIOCS Co. Ltd.)(Yushi Souzou Co. Ltd.)(ALLOS Semiconductors GmbH)(SOSHO Co. Ltd. and Osaka University)

【November 9th, Thursday】
Session Th1: Electronic and Spintronic Devices (8:30-9:33)
Chair : S. Sasaki (NTT Basic Research Laboratory)Th1-1 [Invited] 8:30 (30min+poster)
Recent progress of germanium spintronics
K. Hamaya
Osaka University

・・・

Th1-2
9:00 (3min+poster)In-plane easy axis angle dependence of spin-orbit torque induced magnetization switching
Y. Takahashi, A. Ohkawara, T. Anekawa, C. Zhang, S. Fukami and H. Ohno
Tohoku University

・・・ 83

79

Th1-3
9:03 (3min+poster)・・・ 85
An effect of junction diameter on write-error rate of CoFeB/MgO-based magnetic tunnel junction with perpendicular easy axis
T. Saino, H. Sato, S. Fukami and H. Ohno
Tohoku University
Th1-4
9:06 (3min+poster)
Homodyne-detected ferromagnetic resonance in nanoscale magnetic tunnel junction with magnetic field modulation
Z. Wang, M. Shinozaki, A. Okada, S. Kanai, H. Sato, F. Matsukura and H. Ohno
Tohoku University

・・・ 87

Th1-5
9:09 (3min+poster)
Fabrication of Co2Fe0.4Mn0.6Si Heusler alloy thin films on SrTiO3 substrate for spin-injection into semiconductor
H. Inaba, T. Koike, M. Oogane, and Y. Ando
Tohoku University

・・・ 89Th1-6
9:12 (3min+poster)
Suppression of spin Peltier effect under high magnetic fields
R. Itoh*, R. Iguchi*,**, S. Daimon*, K. Oyanagi*, K. Uchida**, and E. Saitoh**Tohoku University, **NIMS

・・・ 91

Th1-7
9:15 (3min+poster)
Ultra-low forward-voltage Ga2O3 trench MOS-type SBDs
K. Sasaki*, **, Quang T. Thieu*, D. Wakimoto*,**, Y. Koishikawa*,** A. Kuramata*,** and S. Yamakoshi*,***Novel Crystal Technology, **Tamura Corporation

・・・ 93

Th1-8
9:18 (3min+poster)Development of channeled ion implantation into GaN and fabrication of GaN based MOSFET towards GaN-IC
H. Sekiguchi, H. Okada, K. Miwa, T. Yokoyama, K. Yamane and A. Wakahara
Toyohashi University of Technology

・・・ 95

Th1-9
9:21 (3min+poster)・・・ 97
High temperature characteristics in AlGaN/GaN asymmetric open-gate HFETs with recessed-gate enhanced-barrier structure
T. Makie and N. Maeda
Tokyo University of Technology
Th1-10
9:24 (3min+poster)m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off- angled m-plane GaN substrate
A.Tanaka, Y. Ando, O. Barry, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano
Nagoya University

・・・

Th1-11
9:27 (3min+poster)
Correlation between dislocation and leakage current of p-n diodes on free-standing GaN substrate
S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Hond and H. Amano
Nagoya University

・・・ 101

Th1-12
9:30 (3min+poster)
Channel-length scaling of III-V nanowire vertical field-effect transistors
K. Tomioka, A. Yoshida, Y. Minami and F. Ishizaka
Hokkaido University

・・・ 10399

Session Th2: Optical Devices (9:33-10:15)
Chair : M. Uemukai (Osaka University)Th2-1
9:33 (3min+poster)
Fabrication of nanocolumn LED with Eu-doped GaN active region grown by RF-MBE
R. Matsuzaki*, H. Sekiguchi*, A. Sukegawa*, K. Yamane*, H. Okada*, K. Kishino** and A. Wakahara**Toyohashi University of Technology, ** Sophia University

・・・ 105

Th2-2
9:36 (3min+poster)Study on fabrication and characterizations of multi-quantum-shell GaInN/GaN nanowire LEDs
K. Nokimura*, M. H. Kim*, A. Suzuki*, Y. Kurisaki*, H. Shibuya*, M. Takebayashi*, K. Sasai*,S. Kamiyama*, T. Takeuchi*, M. Iwaya* and I. Akasaki*, ***Meijo University, **Nagoya University

・・・ 107

Th2-3
9:39 (3min+poster)
Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology
K. Takahashi*, R. Shinoda*, S. Mitsufuji*, N. Muramatsu*, M. Iwaya*, T. Takeuchi*, S. Kamiyama*,
T. Hattori*, I. Akasaki*,** and A. Hiroshi***Meijo University, **Nagoya University

・・・ 109Th2-4
9:42 (3min+poster)
Fabrication of a semipolar (10-1-1) GaInN-based solar cell
N. Muramatsu*, T. Takanishi*, S. Mitufuji*, K. Takahashi*, M. Iwaya*, T. Takeuchi*, S. Kamiyama*
and Isamu Akasaki*,***Meijo University, **Nagoya University

・・・ 111

Th2-5
9:45 (3min+poster)
Arrangement technique of GaN-nanowires based on top-down approach
M. Takebayashi*, M. H. Kim*, A. Suzuki*, Y. Kurisaki*, H. Shibuya*, K. Nokimura*, K. Sasai*, S. Kamiyama*,
T. Takeuchi*, M. Iwaya* and I. Akasaki*,***Meijo University, **Nagoya University

・・・ 113

Th2-6
9:48 (3min+poster)
Enhancement of Eu emission intensity in Eu doped GaN by silver nanoparticles on thin p-GaN layer
T. Yamada, T. Inaba, J. Tatebayashi and Y. Fujiwara
Osaka University

・・・ 115

Th2-7
9:51 (3min+poster)・・・ 117Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO3
T. Onodera*, M. Uemukai*, K. Takahashi**, M. Iwaya**, I. Akasaki**, Y. Hayashi***, H. Miyake*** and R. Katayama**Osaka University, **Meijo University, ***Mie University
Th2-8
9:54 (3min+poster)Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models
Y. Hayashi*, H. Miyake*, K. Hiramatsu*, T. Akiyama*, T. Ito* and R. Katayama***Mie University **Osaka University

・・・ 119

Th2-9
9:57 (3min+poster)
Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation
S. Yamaguchi*, M. Uemukai*, K. Takahashi**, M. Iwaya**, I. Akasaki**, Y. Hayashi**, H. Miyake**, T. Yamada*,
Y. Fujiwara* and R. Katayama**Osaka University, **Meijo University

・・・ 121

Th2-10
10:00 (3min+poster)
Design of GaN monolithic doubly-resonant microcavity SHG device
T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
Osaka University

・・・ 123

Th2-11
10:03 (3min+poster)
GaN rib waveguide directional coupler for optical quantum information processing systems
J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R.katayama
Osaka University

・・・ 125

Th2-12
10:06 (3min+poster)・・・ 127
Extremely rapid growth of GaAs by MOVPE for low-cost PV applications
A. Ubukata*, H. Sodabanlu**, K. Watanabe**, S. Koseki*, Y. Yano*, T. Tabuchi*, T. Sugaya***,K. Matsumoto*, Y. Nakano**, and M. Sugiyama***Taiyo Nippon Sanso Corp., **The University of Tokyo, ***National Institute of Advanced Industrial Science and Technology

Th2-13
10:09 (3min+poster)
MOVPE growth of low-antiphase-boundary-density GaAs layer on on-axis Si (100) substrate
R. Nakao and S. Matsuo
NTT Device Technology Laboratories

・・・ 129

Th2-14
10:12 (3min+poster)
Alloy compositional dependence of Zn diffusion characteristics in InGaAsP and InGaAlAs grown by MOVPE
T. Kitatani, K. Okamoto, K. Uchida and S. Tanaka
Oclaro Japan, Inc.

・・・ 131

Break (10:15-10:25)

Poster Session II (Th1, Th2) (10:25-12:00)

Lunch (12:00-13:00)

Session Th3: Low Dimensional Structures (13:00-14:12)
Chair : K. Kawaguchi (FUJITSU Laboratories)

Th3-1 [Invited] 13:00 (30min+poster)
Understanding of layered heterointerfaces in 2D semiconductors
K. Nagashio
The University of Tokyo・・・ 133

Th3-2
13:30 (3min+poster)
Pulsed current-mode plating of smooth thin copper layer on graphene for fabrication of copper-graphene composite
K. Fujiwara, D. Yamamoto, J. Yamada, Y. Ueda, T. Maruyama and S. Naritsuka
Meijo University

・・・ 135

Th3-3
13:33 (3min+poster)
Investigation of carrier thermal excitation process in GaAs-inserted InGaAs/GaAsP superlattice solar cell
T. Nakamura*, H. Takeda*, J. Lu*, H. Suzuki*, T. Ikari*, K. Topraserpong**, M. Sugiyama** and A. Fukuyama**University of Miyazaki, **The University of Tokyo・・・ 137

Th3-4
13:36 (3min+poster)
Effect of compressive strain on the photoluminescence spectrum of multi-sacked InAs quantum dots structure
F. Ishitsuka*, D. Ohori**, A. Iwamoto*, T. Ikari*, K. Akahane*** and A. Fukuyama**University of Miyazaki, **Tohoku University, ***NICT・・・ 139

Th3-5
13:39 (3min+poster)Internal quantum efficiency of InGaN/GaN multiple quantum wells grown on ScAlMgO4 substrate
C. Hagiwara*, S. Kuboya*, T. Tanikawa*, T. Fukuda** and T. Matsuoka**Tohoku University, **Fukuda Crystal Laboratory

・・・ 141

Th3-6
13:42 (3min+poster)・・・ 143
Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by molecular beam epitaxy
T. Hattori, M. Kushimoto, S. Nitta, Y. Honda and H. Amano
Nagoya University
Th3-7
13:45 (3min+poster)Growth of self-organized Eu-doped InGaN nanocolumns by RF-plasma-assisted molecular beam epitaxy
A. Sukegawa, H. Sekiguchi, R. Matsuzaki , K. Yamane, H. Okada, K. Kishino and A. Wakahara
Toyohashi University of Technology

・・・ 145

Th3-8
13:48 (3min+poster)
Fabrication of regularly arranged Eu doped GaN nanocolumns using Ti mask selective area growth
K. Ozaki*, H. Sekiguchi*, Y. Tamai*, K. Yamane*, H. Okada*, K. Kishino** and A. Wakahara**Toyohashi University of Technology, **Sophia University

・・・ 147

Th3-9
13:51 (3min+poster)Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps
M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
Kyoto University

・・・ 149

Th3-10
13:54 (3min+poster)・・・ 151
Critical role of liquid-solid interface on composition and electrical conduction properties ofvapor-liquid-solid grown oxide nanowires
K. Nagashima*, H. Anzai*, Z. Zhu*, Hi. Yoshida**, M. Suzuki*, M. Kanai*, T. Takahashi, S. Takeda** and T. Yanagida** IMCE Kyushu University, **ISIR Osaka University
Th3-11
13:57 (3min+poster)Growth and characterization of nanowire quantum dots emitting at telecom wavelength
M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka and J. Motohisa
Hokkaido University

・・・ 153

Th3-12
14:00 (3min+poster)
GaAs/GaAsBi nanowire growth on Si(111)
K. Yano*, K. Takada*, K. Nishioka*, P. Patil*, F. Ishikawa*, S. Shimomura*, K. Nagashima** and T. Yanagida***Ehime University, **Kyushu University

・・・ 155

Th3-13
14:03 (3min+poster)Synthesis of GaAs-related multishell nanowires with native oxide AlGaOx outermost shell
N. Tsuda and F. Ishikawa
Ehime University

・・・ 157

Th3-14
14:06 (3min+poster)
Selective-area growth of InGaAs nanowires with various In compositions on Ge(111) by MOVPE
A. Yoshida, Y. Minami, K. Chiba, K. Tomioka and J. Motohisa
Hokkaido University

・・・ 159

Th3-15
14:09 (3min+poster)
Selective-area MOVPE of GaAs nanowires on Ge(111) substrates toward photovoltaic applications
Y. Minami, A. Yoshida, K. Tomioka and J. Motohisa
Hokkaido University

・・・ 161

Session Th4: Novel Electronic Materials (14:12-15:21)
Chair : S. Naritsuka (Meijo University)Th4-1 [Invited] 14:12 (30min+poster)
R&D of REBa2Cu3Oy high-Tc superconducting tapes – present status and future prospect –T. Izumi
National Institute of Advanced Industrial Science and Technologies

・・・ 163

Th4-2
14:42 (3min+poster)
The effect of lattice mismatch on strains and magnetic properties of -phase MnAl films
F. Takata, T. Gushi, A. Anzai, K. Toko and T. Suemasu
University of Tsukuba

・・・ 165

Th4-3
14:45 (3min+poster)
Epitaxial growth and magnetic properties of MnxFe4-xN films
A. Anzai, T. Gushi, F. Takata, K. Toko and T. Suemasu
University of Tsukuba

・・・ 167

Th4-4
14:48 (3min+poster)
Pyramidal diamond formation by high pressure and high temperature technique
R. Fukuta, N. Yamamoto, F. Ishikawa, M. Matsushita, H. Ohfuji, T. Shinmei and T. Irifune
Ehime University

・・・ 169

Th4-5
14:51 (3min+poster)・・・ 171
Properties of molybdenum disulfide (MoS2) thin film fabricated by mist CVD
S. Sato*, M. Sakamoto, D. T. Giang, E. K. C. Pradeep, L. Li, P. Rutthongjan, Y. Kobayashi, M. Ueda and T. Kawaharamura
Kochi University of Technology
Th4-6
14:54 (3min+poster)
Usage of nano diamond as carbon source in graphene precipitation method
D. Yamamoto, J. Yamada, Y. Ueda, K. Fujiwara, T. Maruyama and S. Naritsuka
Meijo University

・・・ 173

Th4-7
14:57 (3min+poster)
Optimization of template growth duration in p-BaSi2/n-Si solar cells
S. Yachi, R. Takabe, K. Toko and T. Suemasu
University of Tsukuba

・・・ 175

Th4-8
15:00 (3min+poster)Nonvolatile resistive memory 99.3 vol.% composed of nanocellulose
K. Nagashima*, H. Koga**,***, U. Celano****, T. Kitaoka*, M. Nogi** and T. Yanagida** Kyushu University, **Osaka University, ***Core lab, ****imec

・・・ 177

Th4-9
15:03 (3min+poster)Spatiotemporal nanoscale thermal management toward room temperature operated high performance molecule sensor
K. Nagashima*, G. Meng*, K. Nakamura*, T. Takahashi*, F. Zhuge*, M. Kanai*, K. Uchida** and T. Yanagida**Kyushu University, **Keio University

・・・ 179

Th4-10
15:06 (3min+poster)Anti-stokes photoluminescence in Yb-doped yttrium aluminum garnet
Y. Nakayama, Y. Harada and T. Kita
Kobe University

・・・ 181

Th4-11
15:09 (3min+poster)
Effect of substrate and growth temperature on fabrication of CH3NH3PbI3 thin films by the mist deposition Method
Y. Haruta, M. Ui, T. Ikenoue, M. Miyake and T. Hirato
Kyoto University

・・・ 185

Th4-12
15:12 (3min+poster)
Catalyst dependence of metal induced lateral crystallization (MILC) for amorphous Ge on insulator
Y. Sato, T. Sakai, K. Takakura and I. Tsunoda
National Institute of Technology, Kumamoto College

・・・ 187

Th4-13
15:15 (3min+poster)
Influence of Au film thickness on Au induced lateral crystallization for amorphous Ge on insulating substrate
T. Sakai, K. Kusano, Y. Sato, K. Takakura and I. Tsunoda
National Institute of Technology, Kumamoto College

・・・ 189

Th4-14
15:18 (3min+poster)
Crystalline quality of biogenic PbS
R. Shimizu, Y. Tominaga, S. Maki, M. Maeda and Y. Okamura
Hiroshima University

・・・ 191

Break (15:21-15:31)

Session Th5: Surfaces & Interfaces (15:31-16:31)
Chair : M. Yayama (National Institute of Advanced Industrial Science and Technologies)
Th5-1 [Invited] 15:31 (30min+poster)Acceleration of materials research driven by machine learning: recent progress of materials informatics
Y. AndoNational Institute of Advanced Industrial Science and Technology

・・・ 193

Th5-2
16:01 (3min+poster)
Thermoelectric properties of -Ga2O3
Y. OtaTokyo Metropolitan Industrial Technology Research Institute・・・ 197

Th5-3
16:04 (3min+poster)
Characterization of electrical properties of -Ga2O3 films on m-plane sapphire substrate
K.Akaiwa*, K. Ohta*, T. Sekiyama*, T. Abe*, T. Shinohe** and K. Ichino**Tottori University, **FLOSFIA・・・ 199

Th5-4
16:07 (3min+poster)Study on surface band bending of -Ga2O3 grown by mist-CVD
Y. Fujiki*, J. Kikawa*, T. Araki*, Y. Nanishi*, T. Matsuda** and T. Shinohe***Ritsumeikan University, **FLOSFIA・・・ 201

Th5-5
16:10 (3min+poster)
Sample shape dependence of photoluminescence in ZnO
S. Hoshina* , H. Nakata* , and Y. Harada***Osaka Kyoiku University , **Osaka Institute of Tech.

・・・ 203

Th5-6
16:13 (3min+poster)
Deep-UV emission properties of rocksalt-structured MgxZn1-xO Films Grown on MgO (001) Substrates
M. Ono*, K. Ishii**, T. Uchida**, R. Jinno**, K. Kaneko**, T. Yamaguchi*, T. Honda*, S. Fujita** and T. Onuma**Kogakuin University, **Kyoto University

・・・ 205

Th5-7
16:16 (3min+poster)Study on growth of high quality MgZnO films on MgO substrates for DUV light emission
K. Ishii*, T. Onuma**, T. Uchida*, R. Jinno*, K. Kaneko* and S. Fujita**Kyoto University, **Kogakuin University

・・・ 207

Th5-8
16:19 (3min+poster)Surface reaction process of Ge thin film on Si and GaAs substrate by pulsed-jet epitaxy apparatus
M. Kawano*, T. Yamauchi*, M. Ishikawa**, H. Sudo**, H. Machida**, Y. Ohshita*** and H. Suzuki**University of Miyazaki, **Gas-Phase Growth LTD., ***Toyota Technological Institute・・・ 209

Th5-916:22 (3min+poster)Interface state density and dielectric breakdown electric fields of MOS capacitors using
several off-cut m-plane GaN substrates
M. Deki, K. Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano
Nagoya University

・・・ 211

Th5-10
16:25 (3min+poster)Study on charge states of SiO2 by Kelvin probe force microscopy and C-V measurement
for GaN based power device application
Y. T. Chen, J. Kikawa, T. Araki and Y. Nanishi
Ritsumeikan University

・・・ 213

Th5-11
16:28 (3min+poster)Angle-resolved XPS spectra of InN/GaN grown by DERI method
Y. Nakajima, T. Onuma, T. Yamaguchi and T. Honda
Kougakuin University

・・・ 215

Break (16:31-16:41)

Poster Session III (Th3, Th4, Th5) (16:41-18:40)

Break (18:40-19:00)

Banquet (19:00-21:00)

【November 10th, Friday】
Session Fr1: Growth & Characterization (8:30-10:15)
Chair : M. Iwaya (Meijo University)
Fr1-1[Invited] 8:30 (30min+poster)Nano-scale analysis of GaN-based compound semiconductor
S. Tomiya*, Y. Kanitani*, T. Tange* T. Ohkubo** and K. Hono***Sony Corporation, ** National Institute for Materials Science・・・ 217Fr1-2
9:00 (3min+poster)Threading dislocations behavior in InN films regrown on N radical irradiated InN template
F. B. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
Ritsumeikan University

・・・ 221

Fr1-3
9:03 (3min+poster)
Investigation on GaN nanowire growth conditions for vertical FET applications
Y. Yamamoto, N. Tamaki and J. Motohisa
Hokkaido University

・・・ 223

Fr1-4
9:06 (3min+poster)
RF-MBE growth of regularly arranged GaN nanocolumns on (111) Si substrate
Y. Higashi*, H. Sekiguchi*, K. Yamane*, H.Okada**, A. Wakahara* and K. Kishino****Toyohashi University, **EIIRIS, ***Sophia University

・・・ 225

Fr1-5
9:09 (3min+poster)
Basic study for thin film growth of GaN by chemical vapor deposition using Ga vapor as a Ga source
T. Nagase, Y. Masuda, K. Fukasawa, T. Kouno, H. Kominami and K. Hara
Shizuoka University

・・・ 227

Fr1-6
9:12 (3min+poster)
Investigation of growth conditions on the initial nucleation for h-BN thin film growth
T. Kawarazaki, N. Umehara, T. Nakama, T. Kouno, H. Kominami and K. Hara
Shizuoka University

・・・ 229

Fr1-7
9:15 (3min+poster)
Investigation of quality improvement process of sputtered AlN films by high-temperature annealing
S. Xiao*, R. Suzuki*, H. Miyake*, K. Hiramatsu*, S. Harada** and T. Ujihara***Mie University, **Nagoya University

・・・ 231

Fr1-8
9:18 (3min+poster)
Influence of nitrogen radical beam irradiation on MBE growth of InN
K. Watanabe, S. Usuda, S. Mouri, T. Araki and Y. Nanishi
Ritsumeikan University

・・・ 233

Fr1-9
9:21 (3min+poster)
Epitaxial growth of transferable indium nitride on graphene
S. Mouri, S. Arakawa, U. Oe, S. Kutsuno, Y. Kubonaka, K. Kuroda, T. Araki and Y. Nanishi
Ritsumeikan University

・・・ 235

Fr1-10
9:24 (3min+poster)Growth mechanism of polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities
Y. Matsuda, M. Funato and Y. Kawakami
Kyoto University

・・・ 237

Fr1-11
9:27 (3min+poster)
Influence of lattice constraint on In incorporation in InGaN MOVPE
Y. Inatomi*, Y. Kangawa,*,** and K. Kakimoto** Kyushu University, **Nagoya University

・・・ 239

Fr1-12
9:30 (3min+poster)
Usage of graphene mask for expanding lateral-growth in GaN low angle incidence microchannel epitaxy
S. Takenaka, Y. Ueda, J. Yamada, T. Maruyama and S. Naritsuka
Meijo University

・・・ 241

Fr1-13
9:33 (3min+poster)
Improvement of heterointerface abruptness in N-polar InGaN/AlGaN/GaN heterostructures grownby metalorganic vapor phase epitaxy
S. Tanaka, K. Prasertsuk, T. Kimura, T. Tanikawa, T. Suemitsu and T. Matsuoka
Tohoku University

・・・ 243

Fr1-14
9:36 (3min+poster)Growth and optical characteristics of Tm-doped AlGaN by organometallic vapor phase epitaxy
R. Fuji, J. Takatsu, T. Inaba, J. Tatebayashi and Y. Fujiwara
Osaka University

・・・ 245

Fr1-15
09:39 (3min+poster)
Evaluation of defect in InxGa1-xAs grown by solid phase epitaxy
K. Hirayama*, Y. Tominaga*, Y. Kadoya*, H. Morioka**, N. Ikenaga*** and O. Ueda****Hiroshima University, **Bruker AXS K.K., ***Kanazawa Institute of Technology

・・・ 247

Fr1-16
9:42 (3min+poster)
Evaluation of localized states in low-temperature-grown InxGa1-xAs by using Hall effect measurement
S. Tsurisaki*, Y. Tominaga*, M. Deura** and Y. Kadoya**Hiroshima University, **Tohoku University

・・・ 249

Fr1-17
9:45 (3min+poster)Three-dimensional imaging of threading dislocations in thick GaN films by two-photon-excitation photoluminescence
T. Tanikawa, K. Ohnishi and T. Matsuoka
Tohoku University

・・・ 251

Fr1-189:48 (3min+poster)
Visualization of electrical conductivity for GaN epitaxial layers by Raman mapping
K. Watanabe
National Institute of Advanced Industrial Science and Technology

・・・ 253

Fr1-199:51 (3min+poster)
Deep level traps in electron-beam irradiated homoepitaxial n-type GaN
M. Horita*, T. Narita**, T. Kachi***, T. Uesugi** and J. Suda*,****Kyoto University, **Toyota Central R&D Labs., ***Nagoya University

・・・ 255

Fr1-20
9:54 (3min+poster)Temperature dependence of photocurrent induced by Franz-Keldysh effect in GaN p-n junction diode
under high reverse bias voltage
T. Maeda*, T. Narita*, M. Kanechika**, T. Uesugi**, T. Kachi***, T. Kimoto*, M. Horita* and J. Suda*,****Kyoto University, **TOYOTA Central R&D Labs., ***Nagoya University

・・・ 257

Fr1-21
9:57 (3min+poster)
Characterization of electrical properties of InN epilayer using THz ellipsometry
K. Morino*, T. Fujii*,***, S. Mouri*, T. Araki*, Y. Nanishi*, T. Nagashima**, T. Iwamoto*** and Y. Sato***,*Ritsumeikan University, **Setsunan University, ***Nippo Precision Co.

・・・ 259

Fr1-22
10:00 (3min+poster)
Characterization of defects in EFG-grown -Ga2O3 single crystals
O. Ueda*, N. Ikenaga*, K. Koshi**,***, K. Iizuka**,***, A. Kuramata**,***, K. Hanada****,
T. Moribayashi****, S. Yamakoshi**,*** and M. Kasu*****Kanazawa Institute of Technology, **Tamura Corporation, ***Koha Co., Ltd., ****Saga University

・・・ 261

Fr1-23
10:03 (3min+poster)
Evaluation of mechanical properties of cubic-BN(111) bulk single crystal using nanoindentation
M. Deura*,**, K. Kutsukake**, Y. Ohno**, I. Yonenaga**, and T. Taniguchi****The University of Tokyo, **Tohoku University, ***National Institute of Advanced Industrial Science and Technology

・・・ 263

Fr1-24
10:06 (3min+poster)
Relationship between the luminescence property and the film structure of hexagonal boron nitride grown
on a c-plane sapphire substrate by low-pressure chemical vapor deposition
T. Nakama, N. Umehara, T. Kawarazaki, T. Kouno, H. Kominami and K. Hara
Shizuoka University

・・・ 265

Fr1-25
10:09 (3min+poster)
Characterization of femtosecond-laser-induced periodic structures on SiC substrates
R. Miyagawa and O. Eryu
Nagoya Institute of Technology

・・・ 267

Fr1-26
10:12 (3min+poster)Fine periodic structures formed by femtosecond-laser irradiation onto sapphire substrate
K. Goto, R. Miyagawa and O. Eryu
Nagoya Institute of Technology

Break (10:15-10:25)
Poster Session IV (Fr1) (10:25-12:00)

Lunch (12:00-13:00)

・・・ 269

Special Session (13:00-15:20)“Materials for Future Automobiles”
Chair : J. Suda (Nagoya University)

Tutorial
13:00 (50min+poster)History of car electoronics and semiconductor device evolution
Y. Isobe
DENSO CORPORATION・・・ 271

SP-1 [Invited] 13:50 (30min+poster)
Current status of power devices for automotive applications
T. Kachi
Nagoya University

・・・ 273

SP-2 [Invited] 14:20 (30min+poster)
The current state of automotive lighting technology and the use of lasers
R. Sato
KOITO MANUFACTURING CO., LTD.

・・・ 277

SP-3 [Invited] 14:50 (30min+poster)
Perspectives on battery materials
A. Yamada
The University of Tokyo・・・ 279

Closing Session (15:20-15:40)