Title

X線励起超高速ダイナミクス測定のための硬X線分割・遅延光学系の開発

Author(s)大坂, 泰斗Citation

大阪大学, 2016, 博士論文

Version Type VoR
URL

https://doi.org/10.18910/55928

rights
Note

Osaka University Knowledge Archive : OUKA
https://ir.library.osaka-u.ac.jp/
Osaka University࠙⾲⣬సᡂぢᮏࠚ㸦ὀ㸧࣭᏶ᡂ∧సᡂ᫬࡟ࡣᮒ᭩ࡁᩥᏐࡣࠊ๐㝖ࡍࡿࡇ࡜ࠋ
࣭ྛᩥᏐࡢ᭩యࠊ࣏࢖ࣥࢺࠊࣞ࢖࢔࢘ࢺࡣ⮬⏤࡜ࡍࡿࠋ༤ኈᏛ఩ㄽᩥ㻌X ⥺ບ㉳㉸㧗㏿䝎䜲䝘䝭䜽䝇 ᐃ䛾䛯䜑䛾◳ X ⥺ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ㸦ࠕㄽᩥ㢟ྡࠖࡣᏛ఩⏦ㄳ᭩㢮ࡢグ㍕ෆᐜ࡜ࠊྃㄞⅬࡸⱥᩥࡢ኱ᩥᏐ࣭ᑠᩥᏐࡢ༊ศࢆྵࡵ┦㐪ࡀ↓࠸ࡼ࠺࡟グ㍕ࡍࡿࡇ࡜ࠋࡓࡔࡋࠊⱥᩥ㢟ྡࡢሙྜࡢᣓᘼ᭩ࡁ࡟ࡼࡿ࿴ヂేグࡣ⮬⏤࡜ࡍࡿࠋ
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㻌

Ặྡ

኱ᆏ㻌 Ὀᩯ㻌㻌㻔Ꮫ఩⏦ㄳ᭩㢮䜢ᥦฟ䛧䛯ᖺ᭶䜢すᬺ⾲グ䛷グ㍕㻕㻌

2016 ᖺ 1 ᭶኱㜰኱Ꮫ኱Ꮫ㝔ᕤᏛ◊✲⛉㻌 ⢭ᐦ⛉Ꮫ䞉ᛂ⏝≀⌮Ꮫᑓᨷ㻌㻌㸦ㄽᩥ༤ኈ࡟ࡘ࠸࡚ࡣᑓᨷྡࡢグ㍕ࡣ୙せ㸧(2014.4 ∧)ㅰ㎡ᮏ◊✲䜢㐙⾜䛩䜛䛻䛒䛯䜚䠈⤊ጞᚚᣦᑟ୪䜃䛻ᚚ㠴᧡䜢㈷䜚䜎䛧䛯኱㜰኱Ꮫ኱Ꮫ㝔ᕤᏛ◊✲⛉ ᒣෆ࿴ேᩍᤵ䛻῝⏒䛺䜛ㅰព䜢⾲䛧䜎䛩䠊䜎䛯䠈᪥㡭䛾ᚚᣦᑟ୪䜃䛻᭷┈䛺ᚚຓゝ䜢㡬䛝䜎䛧䛯኱㜰኱Ꮫ኱Ꮫ㝔ᕤᏛ◊✲⛉ బ㔝Ὀஂ෸ᩍᤵ䠈⌮໬Ꮫ◊✲ᡤᨺᑕග⛉Ꮫ⥲ྜ◊✲䝉䞁䝍䞊
XFEL ◊✲㛤Ⓨ㒊㛛䝡䞊䝮䝷䜲䞁◊✲㛤Ⓨ䜾䝹䞊䝥 ▮ᶫ∾ྡ䜾䝹䞊䝥䝕䜱䝺䜽䝍䞊䠈⌮ㄽᨭ᥼䝏䞊䝮 ⋢స㈼἞䝏䞊䝮䝸䞊䝎䞊䠈㧗㍤ᗘග⛉Ꮫ◊✲䝉䞁䝍䞊XFEL ฼⏝◊✲᥎㐍ᐊඛ➃ග※฼⏝◊✲䜾䝹䞊䝥 Ⓩ㔝೺௓༤ኈ䠈≟అ㞝୍༤ኈ䠈ᮾி኱Ꮫ⌮Ꮫ⣔◊✲⛉ బ⸨ᑲὒຓᩍ䛻ཌ䛟ᚚ♩⏦䛧ୖ䛢䜎䛩䠊ᩘ䚻䛾᭷┈䛺ᚚຓゝ䜢㡬䛝䜎䛧䛯኱㜰኱Ꮫ኱Ꮫ㝔ᕤᏛ◊✲⛉ 㧗ᶫᖾ⏕෸ᩍᤵ䠈ᯇᒣᬛ⮳ຓᩍ䛻ཌ䛟ᚚ♩⏦䛧ୖ䛢䜎䛩䠊䜎䛯䠈᭷┈䛺ᚚᩍ♧䜢㈷䜚䜎䛧䛯኱㜰኱Ꮫ኱Ꮫ㝔ᕤᏛ◊✲⛉ ᏳṊ₩ᩍᤵ䠈᳃⏣⍞✑ᩍᤵ䠈᱓ཎ⿱ྖᩍᤵ䠈᳃ᕝⰋᛅᩍᤵ䠈Ώ㒊ᖹྖᩍᤵ䠈㐲⸨຾⩏ᩍᤵ䜢䛿䛨䜑䛸䛩䜛⢭ᐦ⛉Ꮫᩍᐊ䛾ㅖඛ⏕᪉䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊ᮏ◊✲䜢㐙⾜䛩䜛ୖ䛷䠈ᩘ䚻䛾ᚚຓゝ䜢㡬䛝䜎䛧䛯⌮໬Ꮫ◊✲ᡤᨺᑕග⛉Ꮫ⥲ྜ◊✲䝉䞁䝍䞊 ▼ᕝဴஓ䝉䞁䝍䞊㛗䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊䜎䛯䠈SPring-8䠈SACLA 䛻䛚䛡䜛ᐇ㦂䛻㛵䛧䛶ከ䛟䛾ᚚຓゝ䠈ᚚᣦᑟ䜢㡬䛝䜎䛧䛯⌮໬Ꮫ◊✲ᡤᨺᑕග⛉Ꮫ⥲ྜ◊✲䝉䞁䝍䞊 㤶ᮧⰾᶞ༤ኈ䠈㧗㍤ᗘග⛉Ꮫ◊✲䝉䞁䝍䞊 ኱ᶫ἞ᙪ༤ኈ䠈ᮾி኱Ꮫ኱Ꮫ㝔ᕤᏛ⣔◊✲⛉ ୕ᮧ⚽࿴෸ᩍᤵ䠈໭ᾏ㐨኱Ꮫ㟁Ꮚ⛉Ꮫ◊✲ᡤ ᮌᮧ㝯ᚿຓᩍ䠈ᮾி኱Ꮫ኱Ꮫ㝔᪂㡿ᇦ๰ᡂ⛉Ꮫ◊✲⛉ ஭ୖఀ▱㑻Ặ䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊SACLA 䛻䛚䛡䜛ᐇ㦂䛻㝿䛧䛶䠈ᩘ䚻䛾ᚚᩍ♧䠈ᚚ㠴᧡㡬䛝䜎䛧䛯 SLAC National
Accelerator Laboratory䠈LCLS䠈Dr. Aymeric Robert䠈Prof. Jerome B. Hastings䠈Dr. Diling Zhu䠈Dr.
Mthieu Chollet 䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊䜎䛯䠈LCLS 䛻䛚䛡䜛ඛ㥑ⓗ䛺ศ๭䞉㐜ᘏගᏛ⣔䛾䝁䝭䝑䝅䝵䝙䞁 䜾 ᐇ 㦂 䛻 ᚚ ᣍ ᚅ 㡬 䛔 䛯 DESY 䠈 Prof. Gerhard Grübel 䠈 Dr. Wojciech Roseker 䠈 Dr. Felix
Lehmkuehler ୪䜃䛻 LCLS䠈Dr. Yiping Feng䠈Dr. Marcin Sikorski䠈Dr. Sanghoon Song 䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊⤖ᬗ䜔㟁ᴟ➼䜢〇స䛧䛶㡬䛔䛯⳥ඛṇಙ♫㛗䠈⳥ඛ㈗ᬗ㒊㛗䜢䛿䛨䜑䛸䛩䜛ᰴᘧ఍♫䝃䞊䝖䞁䝽䞊䜽䝇䛾ㅖẶ䠈㊊❧┿ኈ㒊㛗䜢䛿䛨䜑䛸䛩䜛ᰴᘧ఍♫ᫀ᫂ᶵᕤ䛾ㅖẶ䠈㔩▼㞞ྐẶ䜢䛿䛨䜑䛸䛩䜛䝅䝱䝷䞁䜲䞁䝇䝒䝹䝯䞁䝒ᰴᘧ఍♫䛾ㅖẶ䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊᪥㡭䛾◊✲άື䛾㐙⾜䛻䛒䛯䜚䠈ປ䜢མ䜟䛪ᚚ༠ຊ㡬䛝䜎䛧䛯ᖹ㔝ᔞẶ䛻῝䛟ឤㅰ䛔䛯䛧䜎䛩䠊

iii

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iv

䜎䛯䠈᪥㡭䜘䜚ᚚᣦᑟ㡬䛝䜎䛧䛯㔠ᒸᨻᙪ༤ኈ䠈ᒸᮏṊᚿ༤ኈ䠈ᐃᅧᓧ༤ኈ䠈୰᳃⣫ᇶẶ䠈ᶓᒣගẶ䜢䛿䛨䜑䛸䛩䜛ᒣෆ◊✲ᐊ䛾༞ᴗ⏕䛾ㅖ඗䛻ᚰ䜘䜚ឤㅰ⮴䛧䜎䛩䠊䜎䛯䠈᪥㡭䛾஦ົⓗ䛺ᚚᨭ᥼䜢㡬䛝䜎䛧䛯ᒣෆ◊✲ᐊ ᶲᘪᏊ⛎᭩䠈ஂಖⱥ⌮Ꮚ⛎᭩䠈ᑎ஭჆ዉᏊ⛎᭩䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊䛭䛧䛶᪥㡭䜘䜚◊✲άື䛻␃䜎䜙䛪⚾⏕ά䛻㛵䛩䜛஦䜎䛷┦ㄯ䛻஌䛳䛶㡬䛝䜎䛧䛯ὸ㔝༤ᘺẶ䠈௒஭ᑗኴẶ䠈໭ᮧ┿୍Ặ䠈㔠❶㞵Ặ䠈㕥ᮌ᫂኱Ặ䠈すᕝኸ᫂Ặ䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊ᮏ◊✲䛾୍㒊䛿䠈ᩥ㒊⛉Ꮫ┬䜾䝻䞊䝞䝹 COE 䝥䝻䜾䝷䝮䠄㧗ᶵ⬟໬ཎᏊไᚚ〇㐀䝥䝻䝉䝇ᩍ⫱◊✲ᣐⅬ䠅䠈᪥ᮏᏛ⾡᣺⯆఍≉ู◊✲ဨዡບ㈝䠄25-898䠅䠈⌮໬Ꮫ◊✲ᡤ䠄SACLA ฼⏝⿦⨨ᥦ᱌ㄢ㢟䠅ཬ䜃⛉Ꮫᢏ⾡᣺⯆ᶵᵓ⛉Ꮫᢏ⾡䜲䝜䝧䞊䝅䝵䞁๰ฟᇶ┙ᵓ⠏஦ᴗ䠄X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊᪋タ㔜Ⅼᡓ␎ㄢ㢟᥎㐍஦ᴗ䠅䛾ຓᡂ䜢ཷ䛡䛶⾜䜟䜜䜎䛧䛯䠊䛣䛣䛻῝䛟ឤㅰ⮴䛧䜎䛩䠊᭱ᚋ䛻䠈ᮏ◊✲䛾㐙⾜䛻䛒䛯䛳䛶䛿ᐙ᪘䛸཭ே䛾⤊ጞኚ䜟䜙䛼ᬮ䛛䛔ບ䜎䛧䛜䛒䛳䛯䛣䛸䜢グ䛧䠈䛣䛣䛻ឤㅰ䛾ព䜢⾲䛧䜎䛩䠊2016 ᖺ 1 ᭶ 14 ᪥

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ㅰ㎡

iii

ᅗ┠ḟ

ix

⾲┠ḟ

xiii

1. ᗎㄽ

1

1.1

◊✲⫼ᬒ ······························································································1

1.2◳ X ⥺㡿ᇦ䛻䛚䛡䜛ศ๭䞉㐜ᘏගᏛ⣔ ·························································

3

1.2.1

ከᒙ⭷䝭䝷䞊 ·················································································

3

1.2.2

ᅇᢡ᱁Ꮚ ·················································· ···································

4

1.2.3

⤖ᬗ⣲Ꮚ ·················································· ···································

5

1.3

୺せගᏛ⣲Ꮚ䛾㛤Ⓨືྥ ·················································· ·······················

7

1.4

ᮏㄽᩥ䛾┠ⓗ䛸ᵓᡂ ················································································

8

2. ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

11

2.1

⥴ゝ ···································································································· 11

2.2ศ๭䞉㐜ᘏගᏛ⣔䛾⤖ᬗ㓄⨨ ····································································· 11
2.2.1

ᅇᢡ㠃䛾᳨ウ················································································ 12

2.2.2䝏䝱䝛䝹䜹䝑䝖⤖ᬗᑍἲ䛾᳨ウ ··························································· 14

2.3㐜ᘏ᫬㛫⠊ᅖ䞉ศゎ⬟ ·············································································· 16

2.4ᴟⷧ⤖ᬗ䛾せồ䝟䝷䝯䞊䝍 ········································································· 18

2.5

2.4.1

⤖ᬗཌ䜏䛾᳨ウ············································································· 18

2.4.2

チᐜཌ䜏䝮䝷䛾᳨ウ ········································································ 20ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ぢ✚䜒䜚 ································································· 21

v

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vi

2.6

2.5.1

Si(111) 䝰䝜䜽䝻䝯䞊䝍䛻ᑐ䛩䜛᳨ウ ····················································· 21

2.5.2

SASE 䛻ᑐ䛩䜛᳨ウ ········································································ 25⤖ゝ ···································································································· 29

3. ୺せගᏛ⣲Ꮚ䛾స〇

31

3.1

⥴ゝ ···································································································· 31

3.2

Plasma Chemical Vaporization Machining························································ 31
3.2.1

ᇶ♏≉ᛶ䛸⿦⨨⣔ ·········································································· 31

3.2.2

ຍᕤ≉ᛶ ·················································· ··································· 34

3.2.2.1 ຍᕤ᮲௳䛸✵㛫ศゎ⬟䛾ホ౯ ······················································ 34
3.2.2.2 ⤖ᬗ㠃౫Ꮡᛶホ౯ ···································································· 36
3.2.2.3 ⾲㠃⢒䛥䛾ホ౯ ········································································ 39
3.3䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇 ········································································ 40
3.3.1⤖ᬗ䝕䝄䜲䞁䛸๓ຍᕤ ····································································· 40

3.3.2

ຍᕤᡭ㡰 ·················································· ··································· 41

3.3.2.1 ᇶᮏ᪉㔪 ················································································ 41
3.3.2.2 䝔䞊䝟䞊㠃ຍᕤ ······································································· 42
3.3.2.3 ⿬㠃ຍᕤ ················································································ 45
3.3.2.4 ⷧ໬ຍᕤ ················································································ 47
3.3.3

ຍᕤ⤖ᯝ䛸⤖ᬗᛶホ౯ ···································································· 50

3.3.4

᭷ຠ䛺฼⏝ἲ䛾᳨ウ ······································································· 59

3.4䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃䝎䝯䞊䝆㝖ཤ ····················································· 62

3.5⤖ゝ ···································································································· 65

4. 䜰䝷䜲䝯䞁䝖ᡭἲ

67

4.1

⥴ゝ ···································································································· 67

4.2

㞟ග䛾ཎ⌮䛸䜰䝷䜲䝯䞁䝖ㄗᕪ䛾ᙳ㡪 ··························································· 67

4.3

䜰䝷䜲䝯䞁䝖ᡭ㡰 ······················································································· 71

┠ḟ

4.4

4.5

vii

4.3.1

ㄪᩚ㍈䛾᳨ウ················································································ 71

4.3.2

䜰䝷䜲䝯䞁䝖ᡭ㡰䛾᳨ウ ····································································· 73

ᅇ㌿䝇䝔䞊䝆䛾せồศゎ⬟ ······································································ 75
4.4.1

ᗄఱᏛ䛻䜘䜛ぢ✚䜒䜚 ······································································· 75

4.4.2

ග⥺㏣㊧ィ⟬䛻䜘䜛ぢ✚䜒䜚······························································ 76

4.4.3

ἼືගᏛィ⟬䛻䜘䜛ぢ✚䜒䜚······························································ 79⤖ゝ ···································································································· 84

5. ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂

85

5.1

⥴ゝ ···································································································· 85

5.2

SPring-8 䛻䛚䛡䜛ᛶ⬟ホ౯ ········································································ 85

5.3

5.4

5.2.1

ᐇ㦂㓄⨨ ·················································· ··································· 85

5.2.2

䜰䝷䜲䝯䞁䝖 ···················································································· 86

5.2.3

㐜ᘏ᫬㛫ㄪᩚ䛾ᙳ㡪ホ౯································································· 89

5.2.4

䝇䝹䞊䝥䝑䝖䛾ホ౯ ········································································· 91

5.2.5Ⓨᩓゅኚ໬䛻䜘䜛㞟ග䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪 ·········································· 92

SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯ ········································································· 94
5.3.1

䝅䝵䝑䝖ẖ䛾ᙉᗘデ᩿ ······································································· 95

5.3.2⤯ᑐ㐜ᘏ᫬㛫䛸⥺ᙧᛶ

5.3.3

㞟ග≉ᛶホ౯ ·············································································

ᐃ ······························································ 97
98⤖ゝ ·································································································· 101

6. ⥲ᣓ

103

ཧ⪃ᩥ⊩

111

◊✲ᴗ⦼

117

௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

127

ᅗ┠ḟ

1. ᗎㄽ

2. ศ๭䞉㐜ᘏගᏛ⣔䛾タィ
2.1

Schematic diagram of the optical layout of the split-and-delay optics. ······················· 12

2.2

Dimensions of CC1. ·················································································· 15

2.3

Mechanics of the split-and-delay optics. ·························································· 17

2.4

Delay-time ranges and resolutions as a function of photon energies in the split branches. 18

2.5

Thickness dependence of Si(220) diffraction at 10 keV. ········································ 19

2.6

Estimation of phase errors due to thickness variations. ········································· 21

2.7

Throughputs for plane-wave 10 keV X-rays from a Si(111) DCM as a function of energy
deviations of the split branches. ···································································· 23

2.8

Calculation of throughputs taking into account a beam divergence. ·························· 24

2.9

Throughputs as a function of beam divergence at 10 keV. ······································ 24

2.10 Simulated SASE pulse. ·············································································· 26
2.11 Calculation of impulse response of Si(220) diffraction at 10 keV.····························· 26
2.12 Calculation of throughputs for SASE pulses at 10 keV. ········································· 28
2.13 Throughputs for SASE pulses as a function of photon energy. ································ 29

3. ୺せගᏛ⣲Ꮚ䛾స〇
3.1

Picture of PCVM chamber. ·········································································· 33

ix

┠ḟ

x
3.2

Schematic diagram of the equipment for thin crystals. ·········································· 33

3.3

Schematic diagram of the equipment for channel-cut crystals. ································ 34

3.4

Typical removal footprints with an electrode of diameter of 0.3 mm under different removal
conditions. ····························································································· 35

3.5

Removal characteristics with various flow rates of reactive gas and gaps between theelectrode and sample. ················································································ 35

3.6

Distribution of removal rate under an optimized condition. ···································· 35

3.7

Removal volume as a function of plasma dwelling time. ······································· 36

3.8

Removal characteristics for various lattice planes. ·············································· 38

3.9

Surface morphologies at several removal depths. ················································ 39

3.10 Schematic diagrams of the window-shaped beam splitter crystal (Type I). ·················· 40
3.11 Pre-fabrication procedure for crystal Type I. ····················································· 40
3.12 PCVM processes for fabricating a Type I crystal.················································ 41
3.13 Examples of X-ray reflection topograph from a thin Si(511) crystal without the PCVM
process at tapered surface measured with a ( +, − ) parallel arrangement. ···················· 42
3.14 Influence of scratches existing on rear surface of a thin crystal. ······························· 42
3.15 Results of an electrostatic calculation with a process configuration for the tapered-surface
PCVM. ································································································· 43
3.16 Picture of plasma during the tapered-surface PCVM. ··········································· 43
3.17 Pictures of tapered surface of a Type I crystal before (a) and after (b) the PCVM process. 43
3.18 Conceptual image of the electrode-scanning method for removing crystal strains on tapered
surface. ································································································· 45
3.19 Pictures of thin crystals with different removal methods for treating tapered surface. ····· 45
3.20 Effect of surface flattening for realizing uniform PCVM process on the rear surface. ····· 46
3.21 Example of measured thickness distribution. ····················································· 47
3.22 Flow chart of PCVM processes for fabricating thin crystals.··································· 49
3.23 Results of SM01. ····················································································· 51
3.24 Results of SM02. ····················································································· 52
3.25 Results of SM03. ····················································································· 53
3.26 Results of SM04. ····················································································· 54

ᅗ┠ḟ

xi

3.27 Results of SM05. ····················································································· 55
3.28 Results of SM06. ····················································································· 56
3.29 Results of SM07. ····················································································· 57
3.30 Results of SM08. ····················································································· 58
3.31 Transition of Si(440) reflection topograph measured with a 16.325 keV X-ray probe. ····· 60
3.32 Picture of sample holder implementing water cooling and He purge capabilities. ·········· 60
3.33 Transition of reflection topograph from a thin Si(440) crystal operated under several
conditions. ····························································································· 61
3.34 Measured thickness of SiO2 layer on several Si crystals. ······································· 61
3.35 Concept of a PCVM process at an inner-wall diffraction surface of a channel-cut crystal. 63
3.36 Examples of removal profile. ······································································· 63
3.37 Experimental setup for evaluation of channel-cut crystals. ····································· 63
3.38 Four-bounced reflection topograph from a pair of channel-cut crystals measured with 10 keV
X-rays. ································································································· 64

4. 䜰䝷䜲䝯䞁䝖ᡭἲ
4.1

Side view of conceptual diagram of source imaging with a thin lens combined with the splitand-delay optics (SDO). ············································································· 68

4.2

Expected beam paths at different angular mismatches between 2θ1 and 2θ2. ················ 72

4.3

Influence of mismatch between χBR1 and χBR2.···················································· 72

4.4

Alignment procedure. ················································································ 74

4.5

Coordinate system employed in ray-trace calculations. ········································· 77

4.6

Results of ray-trace calculations. ··································································· 78

4.7

Examples of results wave-optical simulations at 10 keV. ······································· 80

4.8Results of wave-optical simulations with the 1 µm focusing system at 6.5 keV. ············ 82

4.9

Results of wave-optical simulations with the 50 nm focusing system at 6.5 keV. ··········· 83

┠ḟ

xii

5. ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂
5.1

Experimental setup for performance test at BL29XUL of SPring-8. ·························· 86

5.2

Results of positional correction in the vertical direction with adjustment of 2θ2. ··········· 87

5.3

Transition of horizontal focal profile during the ‘parallel shift’. ······························· 88

5.4

Focal profiles after fine adjustments. ······························································ 89

5.5

Focal profiles after small change of delay time of 1 ps. ········································· 90

5.6

Horizontal focal profiles after large change of delay time (> 10 ps). ·························· 90

5.7

Comparison of beam profiles measured with CCD2. ············································ 91

5.8Influence of divergence change on focal profiles. ··············································· 93

5.9

Normalized FWHM and dfy/zR as a function of N. ··············································· 94

5.10 Experimental setup for performance test at BL3 of SACLA. ·································· 95
5.11 Correlations between several BIMs. ······························································· 96
5.12 Results of delay-time measurements with an X-ray streak camera. ··························· 97
5.13 Averaged profiles of the split beams. ····························································

99

5.14 Focal profiles of the split beams. ································································· 100
5.15 Averaged upper beam profiles with illuminating a thick part of BS. ························ 100

⾲┠ḟ

1. ᗎㄽ
1.1

Comparison of reported split-and-delay optics. ··················································

7

2. ศ๭䞉㐜ᘏගᏛ⣔䛾タィ
2.1

Characteristics of SACLA XFELs at BL3. ························································ 13

2.2

Comparison of various diffraction planes at 10 keV. ············································ 13

2.3

Resolutions of stages operated with half-step feed mode. ······································ 17

2.4

Required crystal thickness for various orders of diffraction at 10 keV. ······················· 20

3. ୺せගᏛ⣲Ꮚ䛾స〇
3.1

Experimental condition for investigating lattice dependence of removal rate. ··············· 37

3.2

List of samples and evaluation conditions. ························································ 50

4. 䜰䝷䜲䝯䞁䝖ᡭἲ
4.1

Parameters of two focusing systems installed at BL3 of SACLA.····························· 70

5. ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂
5.1

Experimental conditions during investigation of intensity correlations. ······················ 96

5.2

Experimental conditions during focusing characterization.···································

xiii

99

➨1❶

ᗎㄽ
1.1 ◊✲⫼ᬒ㻌ே㢮䛾Ṕྐୖ䠈䇾ぢ䛘䛺䛛䛳䛯䜒䛾䜢ぢ䜛䇿䛸䛔䛖▱ⓗዲወᚰ䛾㏣ồ䛻䜘䛳䛶⛉Ꮫᢏ⾡䛿኱䛝䛺
Ⓨᒎ䜢㐙䛢䛶䛝䛯䠊≉䛻䠈Galilei 䛻䜘䜛ኳయ䛾ほᐹ䠈Leeusenhoek 䛻䜘䜛ᚤ⏕≀䛾ほᐹ➼䛻௦⾲䛥䜜䜛䠈ගᏛᮃ㐲䞉㢧ᚤᢏ⾡䛾Ⓨᒎ䛻䜘䜛ኳᩥᏛ䠈⏕≀Ꮫ䠈໬Ꮫ䜔ᮦᩱ⛉Ꮫ䛻⮳䜛ᖜᗈ䛔⛉Ꮫ㡿ᇦ䜈䛾㈉⊩䛿ィ䜚▱䜜䛺䛔䠊1960 ᖺ䛾 Maiman 䛻䜘䜛䝹䝡䞊䝺䞊䝄䞊䛾Ⓨ᫂ [1] 䜢ዎᶵ䛸䛧䛶䠈ග※ᛶ⬟䛾Ⓨ㐩䜒ⴭ䛧䛟䠈䝢䝁⛊䠄10−12 s䠅䜔䝣䜵䝮䝖⛊䠄10−15 s䠅䛸䛔䛖ᴟ䜑䛶▷䛔䝟䝹䝇᫬㛫ᖜ䜢᭷䛩䜛䝺䞊䝄䞊䛾฼⏝䜒ྍ⬟䛸䛺䛳䛯䠊䛣䜜䜙㉸▷䝟䝹䝇䝺䞊䝄䞊䛾Ⓩሙ䛻䜘䜚䠈ྍど໬ᢏ⾡䛾ᑐ㇟䛿 xyz 䛾✵㛫 3 ḟඖ䛻ຍ䛘䠈᫬㛫䠄t䠅㍈䜢䜒ຍ䛘䛯 4 ḟඖ✵㛫䜈䛸ᣑᙇ䛥䜜䠈㉸㧗㏿᫬㛫ศゎ◊✲ [2] 䛜┒䜣䛻⾜䜟䜜䛶䛔䜛䠊୍᪉䛷䠈1895 ᖺ䛾 Röntgen 䛻䜘䜛 X ⥺䛾Ⓨぢ [3] ௨㝆䠈≀㉁䛻ᑐ䛩䜛㧗䛔㏱㐣ᛶ䠈ཎᏊ䝇䜿䞊䝹䛾▷Ἴ㛗ᛶ䜢⏕䛛䛧䠈≀㉁ෆ㒊䛾ᵓ㐀䛾ྍど໬䠈ඖ⣲㆑ู䠈⏕యศᏊ䜔⤖ᬗᵓ㐀䛾ཎᏊ✵㛫ศゎ⬟ᐃ➼䠈X ⥺㢧ᚤᢏ⾡䜒䜎䛯⛉Ꮫᢏ⾡䛾Ⓨᒎ䛻Ḟ䛛䛫䛺䛔ᢏ⾡䛸䛺䛳䛶䛔䜛䠊➨ 3 ୡ௦ᨺᑕග᪋タ➼䠈ග※ᛶ⬟䛾Ⓨᒎ䛻క䛳䛶䛭䛾ᐃᑐ㇟䜒ᗈ䛜䜚⥆䛡䛶䛔䜛䠊㏆ᖺ䠈䜰䝯䝸䜹䛾䝇䝍䞁䝣䜷䞊䝗ᅜ❧ຍ㏿ჾ◊✲ᡤ䛻఩⨨䛩䜛 Linac Coherent Light Source
䠄LCLS䠅 [4] 䜔᪥ᮏ䛾⌮໬Ꮫ◊✲ᡤᨺᑕග⛉Ꮫ⥲ྜ◊✲䝉䞁䝍䞊䛻఩⨨䛩䜛 SPring-8 Angstrom
Compact free-electron LAser䠄SACLA䠅 [5] 䛜⥺ᙧຍ㏿ჾ䛸㛗ᑻ䜰䞁䝆䝳䝺䞊䝍䜢⏝䛔䛶䠈⮬ᕫቑᖜ⮬↛ᨺᑕ䠄self-amplified spontaneous emission䠈SASE䠅䛾ཎ⌮䛻ᇶ䛵䛝◳ X ⥺㡿ᇦ䛾 X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊䠄X-ray free-electron lasers䠈XFELs䠅䛾Ⓨ᣺䛻ᡂຌ䛧䠈䝴䞊䝄䞊฼⏝䛜ጞ䜎䛳䛶䛔䜛䠊XFEL 䛿➨ 3 ୡ௦ᨺᑕග᪋タ䛸ẚ䜉⣙ 10 ൨ಸ䛾㍤ᗘ䠈䜋䜌᏶඲䛺✵㛫䝁䝠䞊䝺䞁䝇䜢᭷䛩䜛䠈䝟䝹䝇᫬㛫ᖜ䛜⣙ 10 fs 䛾㉸▷䝟䝹䝇ග※䛷䛒䜛䠊䛣䛾䜘䛖䛺ᴟ䜑䛶▷䛔䝟䝹䝇᫬㛫ᖜ䛻䛚䛔䛶䛿䠈䝃䞁䝥䝹୰䛾ཎᏊ䛿䜋䛸䜣䛹ື䛛䛺䛔䛸䛔䛖஦䛜ศᏊືຊᏛィ⟬䛻䜘䜚ண1䛥䜜䛶䛚䜚 [6]䠈ᨺᑕ⥺ᦆ➨ 1 ❶㻌 ᗎㄽ

2യ䛻䜘䜛ศゎ⬟䛾ไ㝈䜢✺◚䛧䛯䝍䞁䝟䜽㉁䛾ᵓ㐀Ỵᐃ [7, 8]䠈㠀ᬗ㉁⏕యヨᩱ䜔䝘䝜ᮦᩱ䛾䝘䝜䝯䞊䝖䝹ศゎ⬟䛻䛚䛡䜛ྍど໬ [9–12] ➼䠈X ⥺㢧ᚤᢏ⾡䛻᭦䛺䜛Ⓨᒎ䛜䜒䛯䜙䛥䜜䛶䛔䜛䠊᭦䛻䠈㧗⢭ᗘ㞟ග䝭䝷䞊䛾฼⏝䛻䜘䜚 1020 Wcm−2 䜢㉸䛘䜛䝟䝽䞊ᐦᗘ䜒ᐇ⌧䛧䛶䛚䜚 [13, 14]䠈2 ගᏊ྾཰[15] 䜔ྍ㣬࿴྾཰ [16]䠈ཎᏊ‽఩䝺䞊䝄䞊䛾Ⓨ᣺ [17] ➼䠈X ⥺㡿ᇦ䛻䛚䛡䜛㠀⥺ᙧගᏛ⌧㇟䛾ほᐹ䛻䜒⮳䛳䛶䛔䜛䠊໬Ꮫ཯ᛂ䜔᱁Ꮚ᣺ື䠈┦㌿⛣୰䛻⏕䛨䜛䝣䜵䝮䝖⛊䛛䜙䝘䝜⛊䝇䜿䞊䝹䛻䛚䛡䜛㟁Ꮚ䞉ཎᏊ䛾㉸㧗㏿䝎䜲䝘䝭䜽䝇䛾ゎ᫂䛿䠈XFEL 䛾ᛂ⏝◊✲䛸䛧䛶᭱䜒ᮇᚅ䛥䜜䛶䛔䜛ᑐ㇟䛾୍䛴䛷䛒䜛䠊XFEL䜢⏝䛔䛯᫬㛫ศゎ◊✲䛻ᑐ䛩䜛ᐇ㦂ᡭἲ䛸䛧䛶䠈䛣䜜䜎䛷䇾ගᏛ䝫䞁䝥䞉XFEL 䝥䝻䞊䝤䇿ᡭἲ䛜ᗈ䛟฼⏝䛥䜜䛶䛔䜛䠊㏆㉥እ䛛䜙㏆⣸እᇦ䛾Ἴ㛗䜢᭷䛩䜛ගᏛ䝫䞁䝥䝟䝹䝇䛻䜘䛳䛶౯㟁Ꮚᖏ䛾㟁Ꮚ≧ែ䛾ኚ໬䜢ㄏ㉳䛧䠈䛭䛾䝎䜲䝘䝭䜽䝇䜢䠈᫬㛫㐜ᘏ䜢᭷䛧䛶↷ᑕ䛧䛯 XFEL 䝥䝻䞊䝤䝟䝹䝇䛻䜘䛳
䛶㏣㊧䛩䜛ᡭἲ䛷䛒䜛 [18–20]䠊䛭䛾௚䛾䜰䝥䝻䞊䝏䛸䛧䛶䠈2 䛴䛾 XFEL 䝟䝹䝇䜢⏝䛔䛯䇾XFEL 䝫䞁䝥䞉XFEL 䝥䝻䞊䝤䇿ᡭἲ䜒⪃䛘䜙䜜䜛䠊ᮏᡭἲ䛻䜘䜚䠈䜽䞊䝻䞁⇿Ⓨ➼䠈ෆẆບ㉳䜔䛭䛾ᚋ⏕䛨䜛ከ㔜䜲䜸䞁໬䛻㉳ᅉ䛧䛯䝎䜲䝘䝭䜽䝇䛾ᐃ䛜ྍ⬟䛸䛺䜛 [21]䠊᭦䛻䠈2 䛴䛾 XFEL 䝟䝹䝇䜢⏝䛔䜛䛣䛸䛷䠈౛䛘䜀 X ⥺ගᏊ┦㛵ศගἲ䠄X-ray photon correlation spectroscopy䠈XPCS䠅䜢฼⏝䛧䛶䠈ᅛయ䜔䝥䝷䝈䝬୰䛾⮬Ⓨⓗ䛺ཎᏊ䛾ᦂ䜙䛞䜢┤᥋ⓗ䛻ᐃྍ⬟䛸䛺䜛 [22]䠊

䛣䛣䛷䠈2 䛴䛾 XFEL 䝟䝹䝇䜢Ⓨ⏕䛥䛫䜛Ⅽ䛾 2 䛴䛾䜰䝥䝻䞊䝏䜢⤂௓䛩䜛䠊1 䛴䛿ຍ㏿ჾ䝧䞊䝇䛾ᡭἲ䛷䛒䜚䠈䜒䛖୍᪉䛿ගᏛ䝧䞊䝇䛾ᡭἲ䛷䛒䜛䠊ຍ㏿ჾ䝧䞊䝇䛾ᡭἲ䛸䛧䛶䠈2 䛴䛾䜰䞁䝆䝳䝺䞊䝍༊⏬㛫䛻㟁Ꮚ䝞䞁䝏㎽ᅇ⏝䛾䝅䜿䜲䞁䜢㓄⨨䛩䜛䛣䛸䛷䠈1 䛴䛾㟁Ꮚ䝞䞁䝏䛛䜙㐜ᘏ᫬㛫ྍኚ
䛺 2 䛴䛾 XFEL 䛾Ⓨ⏕䜢ྍ⬟䛸䛧䛯䇾split-undulator䇿ᡭἲ [23, 24] 䛸䠈㐜ᘏ䜢᭷䛩䜛 2 䛴䛾ගᏛ䝟䝹䝇䝺䞊䝄䞊䜢⏝䛔䠈䝣䜷䝖䜹䝋䞊䝗䛻䜘䛳䛶 2 䛴䛾㟁Ꮚ䝞䞁䝏䜢Ⓨ⏕䛥䛫䜛䇾twin-bunch䇿ᡭἲ [25]䛜ᣲ䛢䜙䜜䜛䠊䇾split-undulator䇿ᡭἲ䛿ཎ⌮ⓗ䛻⥺ᙧຍ㏿ჾ䛻䜘䜛䝆䝑䝍䞊䛾ᙳ㡪䜢ཷ䛡䛺䛔Ⅽ䠈䜰䝖⛊䠄10−18 s䠅䛾᫬㛫⢭ᗘ䛜ᚓ䜙䜜䜛䜒䛾䛾䠈䜰䞁䝆䝳䝺䞊䝍㛗䛜ᮏ᮶䛾༙ศ䛸䛺䜛Ⅽ䠈㧗ᙉᗘ䛛䛴Ᏻᐃ䛺 XFEL 䛾Ⓨ᣺䛜㞴䛧䛔䠊䇾twin-bunch䇿Ⓨ᣺䛿㧗ᙉᗘ䛺 2 䛴䛾 XFEL 䝟䝹䝇䛜ᚓ䜙䜜䜛䛜䠈⥺ᙧຍ㏿ჾ䛾䝆䝑䝍䞊䛾ᙳ㡪䛜㑊䛡䜙䜜䛪䠈᫬㛫⢭ᗘ䛿ᩘ fs 䛻ไ㝈䛥䜜䜛䠊䛔䛪䜜䛾ᡭἲ䛻䛚䛔䛶䜒Ἴ㛗䛾␗䛺䜛 2 䛴䛾 XFEL 䝟䝹䝇䛾Ⓨ᣺䛜ྍ⬟䛷䛒䜛䠊䛧䛛䛧䛺䛜䜙䠈┦ᑐㄽⓗ䛺㏿ᗘ䛷㣕᮶䛩䜛㟁Ꮚ䝞䞁䝏䛾䠈㐜ᘏⓎ⏕䛾Ⅽ䛾㎽ᅇ㊥㞳䛜ไ㝈䛥䜜䜛䛣䛸䜔䠈2 䛴䛾㟁Ꮚ䝞䞁䝏䜢ྠ᫬䛻ຍ㏿ྍ⬟䛺㐜ᘏ᫬㛫䛜ไ㝈䛥䜜䜛஦䛻䜘䜚䠈⌧≧ 100 fs 䜢㉸䛘䜛㐜ᘏ᫬㛫䛾⏕ᡂ䛿ሗ࿌䛥䜜䛶䛔䛺䛔䠊1 䛴䛾㟁Ꮚ䝞䞁䝏୰䛻䝬䜲䜽䝻䝞䞁䝏䜢Ⓨ⏕䛥䛫䜛䇾䝞䞊䝇䝖䝰䞊䝗䇿䛻䜘䛳䛶䝘䝜⛊䛾㐜ᘏ᫬㛫䛾Ⓨ⏕䛜ィ⏬䛥䜜䛶䛔䜛䛜 [26, 27]䠈䝢䝁⛊䛛䜙䝘䝜⛊䛾䜼䝱䝑䝥䜢ᇙ䜑䜛ᚲせ䛜䛒䜛䠊ගᏛ䝧䞊䝇䛾ᡭἲ䛷䛒䜛 XFEL 䝟䝹䝇䛾ศ๭䞉㐜ᘏගᏛ⣔䛿䠈2 䛴䛾 XFEL Ⓨ⏕䛻ᑐ䛧䛶୍࿡㐪䛳䛯ྍ⬟ᛶ䜢᭷䛧䛶䛔䜛䠊ศ๭䞉㐜ᘏගᏛ⣔䛿䝡䞊䝮ศ๭⣲Ꮚ䛸 2 䛴䛾㐜ᘏ䝟䝇䠈䛭䛧䛶䝡䞊䝮⤖1.1㻌 ◊✲⫼ᬒ3ྜ⣲Ꮚ䛸䛷ᵓᡂ䛥䜜䜛䠊㐜ᘏ᫬㛫䛿 2 䛴䛾㐜ᘏ䝟䝇䛾ග㊰㛗ᕪ䜢ኚ໬䛥䛫䜛䛣䛸䛷ไᚚ䛥䜜䜛Ⅽ䠈䇾split-undulator䇿ᡭἲ䛸ྠᵝ䠈ཎ⌮ୖ✲ᴟⓗ䛺᫬㛫⢭ᗘ䛜㐩ᡂ䛥䜜䜛䠊ྍどගᇦ䛻䛚䛔䛶䛿୍⯡ⓗ䛺ගᏛ⣔䛷䛒䜚䠈䝬䝑䝝䝒䜵䞁䝎䞊ᆺ䛾ᖸ΅ィ➼䠈ᗈ䛟฼⏝䛥䜜䛶䛔䜛䜒䛾䛾䠈ᴟ➃⣸እ௨ୗ䛾䠈≀㉁䛾ᒅᢡ⋡䛜㈇䛸䛺䜛Ἴ㛗ᇦ䛻䛚䛔䛶䛿≉ู䛺⣲Ꮚ䛜⏝䛔䜙䜜䛶䛔䜛䠊ᴟ➃⣸እ䛛䜙㌾ X ⥺䜎䛷䛾Ἴ㛗ᇦ䛻䛚䛔䛶䛿䠈཯ᑕᆺ䛾⣲Ꮚ䜢฼⏝䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛜ሗ࿌䛥䜜䛶䛚䜚 [28–30]䠈䛣䛣䛷䛿䝗䜲䝒䛾㌾ X ⥺ FEL ᪋タ䛷䛒䜛 FLASH 䛻ᑟධ䛥䜜䛶䛔䜛䠈ᩳධᑕᆺ䛾඲཯ᑕ䝭䝷䞊䜢⏝䛔䛯ศ๭䞉㐜ᘏගᏛ⣔ [29] 䛻㛵䛧䛶⡆༢䛻ゐ䜜䜛䠊ධᑕ䝟䝹䝇ග䛿䝭䝷䞊䛾䜶䝑䝆䛻䛚䛔䛶཯ᑕග䛸㏱㐣ග䛸䛻✵㛫ⓗ䛻ศ๭䠄Ἴ㠃ศ๭䠅䛥䜜䠈ග㊰㛗ྍኚ䝟䝇䛸ᅛᐃ䝟
䝇䛸䜢㏻䛳䛶䠈ྠ䛨䛟䝭䝷䞊䜶䝑䝆㒊䜢฼⏝䛧䛶ྠ୍ග㍈ୖ䛻෌⤖ྜ䛥䜜䜛䠊඲཯ᑕ䜢฼⏝䛧䛯Ἴ㠃ศ๭䛻䜘䜚䠈ඖ䚻䛾ගᏛ䝟䝷䝯䞊䝍䜢ಖᏑ䛧䛯䜎䜎ྍᖸ΅䛺 2 䛴䛾䝟䝹䝇䛻ศ๭䛥䜜䜛Ⅽ䠈᫬㛫䝁䝠䞊䝺䞁䝇➼䛾ගᏊデ᩿䛻䜒⏝䛔䜙䜜䛶䛔䜛 [29, 31]䠊◳ X ⥺ᇦ䛻䛚䛔䛶䠈඲཯ᑕ䛜⏕䛨䜛⮫⏺ゅ䛿ᩘ mrad 䛸ᑠ䛥䛟䛺䜛䛣䛸䛛䜙䠈኱䛝䛺㐜ᘏ᫬㛫䜢ᐇ⌧䛩䜛䛻䛿㠀ᖖ䛻ᕧ኱䛺ගᏛ⣔䛜ᚲせ䛸䛺䜛䠊ᚑ䛳䛶䠈᪂䛯䛺ගᏛ⣲Ꮚ䠈ගᏛ㓄⨨䜢⏝䛔䛯ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ䛜ᚲせ୙ྍḞ䛷䛒䜛䠊

1.2 ◳ X ⥺㡿ᇦ䛻䛚䛡䜛ศ๭䞉㐜ᘏගᏛ⣔㻌ᮏ⠇䛻䛚䛔䛶䠈◳ X ⥺䜈䛾㐺⏝䜢┠ᣦ䛧䛶ᥦ᱌䛥䜜䛯ศ๭䞉㐜ᘏගᏛ⣔䜢⤂௓䛩䜛䠊䛣䜜䜎䛷ᥦ᱌䛥䜜䛯ศ๭䞉㐜ᘏගᏛ⣔䛿䠈ከᒙ⭷䝭䝷䞊䛻ᇶ䛵䛟⣔䠈ᅇᢡ᱁Ꮚ䛻ᇶ䛵䛟⣔䠈䛭䛧䛶⤖ᬗ⣲Ꮚ䛻ᇶ䛵䛟⣔䛾 3 ✀㢮䛻኱ู䛥䜜䜛䠊䛭䜜䛮䜜䛾䝯䝸䝑䝖䞉䝕䝯䝸䝑䝖䜢ゎㄝ䛩䜛䠊

1.2.1 ከᒙ⭷䝭䝷䞊㻌ᮏ㡯䛷䛿䠈Roling 䜙䛻䜘䛳䛶ᥦ᱌䛥䜜䛯䠈ᩳධᑕᆺ䛾ከᒙ⭷䝭䝷䞊䛻ᇶ䛵䛔䛯ศ๭䞉㐜ᘏගᏛ⣔ [32] 䛻㛵䛧䛶ゎㄝ䛩䜛䠊ᮏගᏛ⣔䛿๓㏙䛧䛯඲཯ᑕ䝭䝷䞊䛻ᇶ䛵䛟ศ๭䞉㐜ᘏගᏛ⣔䛸ᇶᮏⓗ䛻䛿ྠ䛨ཎ⌮䠈ගᏛ㓄⨨䜢㐺⏝䛧䠈◳ X ⥺䝟䝹䝇䛾ศ๭䠈ྠ୍ග㍈ୖ䜈䛾෌⤖ྜ䜢⾜䛖䠊䝭䝷䞊⾲㠃䛻ከᒙ⭷䜢䝁䞊䝔䜱䞁䜾䛩䜛䛣䛸䛷䠈Bragg ᮲௳䠈

2d sin θ B = nλ(1.1)

䜢‶䛯䛩䜘䛖䛻䠈඲཯ᑕ䛸ẚ䜉䜘䜚኱䛝䛺ධᑕゅ䛻䛚䛔䛶཯ᑕ䛜⏕䛨䜛䠊䛣䛣䛷䠈d 䛿ከᒙ⭷䛾࿘ᮇ䠄⤖ᬗ䛾ሙྜ䠈᱁Ꮚ㠃㛫㝸䠅䠈θB 䛿 Bragg ゅ䠈n 䛿 Bragg ᅇᢡ䛾ḟᩘ䠈λ 䛿Ἴ㛗䜢♧䛩䠊ከᒙ⭷䝭䝷➨ 1 ❶㻌 ᗎㄽ

4䞊䛿䛣䜜䜎䛷䠈㧗䝣䝷䝑䜽䝇䛺䝰䝜䜽䝻䝯䞊䝍 [33] 䜔 sub 10 nm 㞟ග [34] 䛻⏝䛔䜙䜜䛶䛚䜚䠈◳ X⥺䛻ᑐ䛧䛶䜒୍⯡ⓗ䛺ගᏛ⣲Ꮚ䛸䛺䜚䛴䛴䛒䜛䠊ᮏගᏛ⣔䛷䛿᭱኱ 64 mrad䠄3.6°䠅䛾 Bragg ゅ䛜⏝䛔䜙䜜䛶䛔䜛䠊䛣䛾኱䛝䛺཯ᑕゅ䛻䜘䛳䛶䠈ẚ㍑ⓗᑠᆺ䛾ගᏛ⣔䛷䜒䝢䝁⛊䜢㉸䛘䜛㐜ᘏ᫬㛫䛾⏕ᡂ䛜ྍ⬟䛸䛺䜛䠊᭦䛻䠈䛭䜜䛮䜜䛾䝭䝷䞊ୖ䛻ᵝ䚻䛺䜶䝛䝹䜼䞊⠊ᅖ䛻᭱㐺໬䛧䛯䛔䛟䛴䛛䛾ከᒙ⭷䜢ᵓ⠏䛩䜛䛣䛸䛷䠈1 䛴䛾䝅䝇䝔䝮䛷 5–20 keV 䛻Ώ䜛ᗈ䛔Ἴ㛗⠊ᅖ䜢䜹䝞䞊䛩䜛䛣䛸䛜ィ⏬䛥䜜
䛶䛔䜛䠊Bragg ᮲௳䜢‶䛯䛩䝞䞁䝗ᖜ䛿᭷㝈䛸䛺䜛䜒䛾䛾䠈㏻ᖖ䠈඾ᆺⓗ䛺 SASE XFEL 䛾䝞䞁䝗ᖜ䛷䛒䜛 ∆E/E0 ~ 5 × 10−3 䜘䜚䜒ᗈ䛔䝞䞁䝗ᖜ䛷᮲௳䛜‶䛯䛥䜜䜛Ⅽ䠈඲཯ᑕ䝭䝷䞊฼⏝᫬䛸ྠ➼䛾ຠ⋡䛜ᐇ⌧䛥䜜䜛䠊䛯䛰䛧䠈䝭䝷䞊䜶䝑䝆㒊䛛䜙䛾ᩓ஘Ἴ䛸䛾ᖸ΅䜔䠈ᖹ㠃䝭䝷䞊ୖ䛾ᙧ≧ㄗᕪ䛻䜘䜛✵㛫䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪䛜ᠱᛕ䛥䜜䛶䛔䜛䠊

1.2.2 ᅇᢡ᱁Ꮚ㻌ᮏ㡯䛷䛿䠈David 䜙䛻䜘䛳䛶㛤Ⓨ䛥䜜䛯ᅇᢡ᱁Ꮚ䛻ᇶ䛵䛟ศ๭䞉㐜ᘏගᏛ⣔ [35] 䜢⤂௓䛩䜛䠊ᮏගᏛ⣔䛿䜟䛪䛛䛻᱁Ꮚ㛫㝸䛾␗䛺䜛ᩘከ䛟䛾ᅇᢡ᱁Ꮚ䠄ศ๭᱁Ꮚ䠅䜢⏝䛔䜛䛣䛸䛷䠈0 ḟ䠄㏱㐣䠅䛾㧗ᙉᗘ䛺䝫䞁䝥䝟䝹䝇䛸䠈䛭䜜䛮䜜䛾ศ๭᱁Ꮚ䛻䛚䛔䛶Ⓨ⏕䛩䜛±1 ḟ䛾ᅇᢡ䝥䝻䞊䝤䝟䝹䝇䛸䛻ศ๭䛩䜛䠊+1 ḟ䛾ศ๭䝟䝹䝇䛿䠈ᑐᛂ䛩䜛ศ๭᱁Ꮚ䛾༙ศ䛾᱁Ꮚ㛫㝸䜢᭷䛩䜛ᅇᢡ᱁Ꮚ䠄⤖ྜ᱁Ꮚ䠅䛻䜘䛳䛶䝃䞁䝥䝹ୖ䛻䛚䛔䛶䝫䞁䝥䝟䝹䝇䛸✵㛫ⓗ䛻෌⤖ྜ䛥䜜䜛䠊䛭䜜䛮䜜䛾ศ๭䝟䝹䝇䛿᭷ព䛺ゅᗘᕪ䜢᭷䛧䛶䛚䜚䠈䝅䜾䝘䝹䛾ศ㞳䛜ྍ⬟䛸䛺䜛䠊䜎䛯䠈䜟䛪䛛䛻㛫㝸䛾␗䛺䜛⤖ྜ᱁Ꮚ䜢−1 ḟ䛾ศ๭䝟䝹䝇䛻ᑐ䛧䛶㐺⏝䛩䜛䛣䛸䛷䠈䝫䞁䝥䝟䝹䝇䛸䛿␗䛺䜛䝃䞁䝥䝹㡿ᇦ䜈䛸౪⤥䛥䜜䠈䝫䞁䝥䛥䜜䛶䛔䛺䛔䇾ཧ↷䝕䞊䝍䇿䛸䛧䛶฼⏝ྍ⬟䛸䛺䜛䠊ᮏගᏛ⣔䛷䛿 1 䛴䛾ධᑕ XFEL 䝟䝹䝇䛛䜙」ᩘ䛾㐜ᘏ᫬㛫䛻䛚䛡䜛䝕䞊䝍䛜ྲྀᚓྍ⬟䛷䛒䜛䠊䛭䜜䛮䜜䛾㐜ᘏ᫬㛫⢭ᗘ䛿ᅇᢡ᱁Ꮚ䛾స〇⢭ᗘ䛻䜘䛳䛶Ỵᐃ䛥䜜䠈ㄗᕪ 0.5%௨ୗ䛸䛔䛖㧗䛔᫬㛫⢭ᗘ䛜ಖド䛥䜜䜛䠊䜎䛯䠈ᵓ㐀ⓗ䛻
XFEL 䝟䝹䝇䛾᫬㛫䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪䜒↓䛟䠈ᅇᢡ䛻䜘䜛ᐇຠⓗ䛺᫬㛫ศゎ⬟䛾పୗ䠄䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䠅䛜⏕䛨䛺䛔䛸䛔䛖฼Ⅼ䜒᭷䛧䛶䛔䜛䠊䛯䛰䛧䠈ᮏගᏛ⣔䛿᭱㐺໬䛥䜜䛯ᐇ㦂䝉䝑䝖䜰䝑䝥䛜ᚲせ୙ྍḞ䛷䛒䜚䠈㞟ග䝭䝷䞊➼䛸䛾ඹ⏝䛜ᅔ㞴䛷䛒䜛䠊䜎䛯䠈ᐃྍ⬟䛺㐜ᘏ᫬㛫䛿䝉䝑䝖䜰䝑䝥䛸 X ⥺䛾Ἴ㛗䛻䜘䛳䛶Ỵᐃ䛥䜜䠈ཎ⌮ୖ㐜ᘏ᫬㛫䝊䝻䜈䛾䜰䜽䝉䝇䛿୙ྍ⬟䛷䛒䜛䠊᭱኱㐜ᘏ᫬㛫䛿ᅇᢡ᱁Ꮚ䛾᭱ᑠ᱁Ꮚ㛫㝸䛻౫Ꮡ䛧䛶䛚䜚䠈⌧≧ 15–20 nm 䛜㝈⏺䛷䛒䜛䛣䛸䛛䜙䠈10 keV ௜㏆䛾Ἴ㛗ᇦ䛻䛚䛔䛶䛿 1 ps 䛾㐜ᘏ᫬㛫䛿ᐇ⌧䛧䛶䛔䛺䛔䠊

1.2㻌 ◳ 㼄 ⥺㡿ᇦ䛻䛚䛡䜛ศ๭䞉㐜ᘏගᏛ⣔5

1.2.3 ⤖ᬗ⣲Ꮚ㻌ᮏ㡯䛷䛿䠈⤖ᬗ⣲Ꮚ䛻ᇶ䛵䛟ศ๭䞉㐜ᘏගᏛ⣔䛻㛵䛧䛶ゎㄝ䛩䜛䠊᱁Ꮚ㠃㛫㝸䛜䜸䞁䜾䝇䝖䝻䞊䝮䝇䜿䞊䝹䛾᏶඲⤖ᬗ䛻䜘䜛 Bragg ᅇᢡ䛻䜘䛳䛶䠈ᘧ䠄1.1䠅䛛䜙 10°䜢㉺䛘䜛 Bragg ゅ䛜ᐇ⌧䛧䠈
100 ps 䜢㉸䛘䜛኱䛝䛺㐜ᘏ᫬㛫䜢⏕ᡂྍ⬟䛷䛒䜛䠊䛣䛾䜘䛖䛺኱䛝䛺཯ᑕゅ䛻䜘䛳䛶䠈ศ๭䛥䜜䛯ගᏊ䝡䞊䝮䛾≉ᛶホ౯䜢䛭䜜䛮䜜⊂❧ⓗ䛻ᐃྍ⬟䛸䛺䜚䠈⢭ᐦ䛺ᐇ㦂䝕䞊䝍䛾ゎᯒ䛜ᐇ⌧䛥䜜䜛䠊䜎䛯䠈ᮏගᏛ⣔䛿༢Ⰽᛶ䛾㧗䛔䠄䝞䞁䝗ᖜ䛾⊃䛔䠅2 䛴䛾 XFEL 䝟䝹䝇䜢Ⓨ⏕ྍ⬟䛷䛒䜛Ⅽ䠈X ⥺ᅇᢡᐇ㦂䛾ศゎ⬟䛾ྥୖ䜔䠈XPCS ᐇ㦂䛻䛚䛔䛶䠈ᅇᢡ䝟䝍䞊䞁䛾㧗ゅ㡿ᇦ䛻䛚䛡䜛䝡䝆䝡䝸䝔䜱䛾ྥୖ䛜ᮇᚅ䛥䜜䜛䠊䛣䜜䜎䛷ᥦ᱌䛥䜜䛶䛔䜛ගᏛ⣔䛿ⷧ䛔⤖ᬗ䛻䜘䜛ᅇᢡἼ䛸ᒅᢡἼ䠄䜒䛧䛟䛿㏱㐣Ἴ䠅䜈䛾䝡䞊䝮ศ๭䛻ᇶ䛵䛔䛶䛔䜛 Bragg䠄཯ᑕ䠅ᆺ䛾⤖ᬗ⣲Ꮚ䜢⏝䛔䜛䛣䛸䛷䠈ཎ⌮ୖᅇᢡ䛻䜘䜛Ἴ㠃䛾ᙳ㡪䛿䜋䛸䜣䛹↓䛟䠈X ⥺䛾㐍ධ῝䛥䛜῝䛔䛣䛸䛛䜙䠈䝭䝷䞊䛸␗䛺䜚ᙧ≧ㄗᕪ䛾ᙳ㡪䜒ᑠ䛥䛔䠊䜎䛯䠈䝞䞁䝗ᖜ䛾ᗈ䛔ᅇᢡ㠃䜢㐺⏝䛩䜛䛣䛸䛷䠈䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䜒᭱ᑠ㝈䛻ᢚไྍ⬟䛷䛒䜛䠊ᮏ㡯䛷䛿ୡ⏺䛻ඛ㥑䛡䛶ሗ࿌䛥䜜䛯 Roseker 䜙䛻䜘䜛ศ๭䞉㐜ᘏගᏛ⣔ [36–38] 䛸䠈Stetsko 䜙䛻䜘䜛ᚋ᪉ᩓ஘⤖ᬗ䜢⏝䛔䛯ගᏛ⣔ [39] 䛸䜢⤂௓䛩䜛䠊
Roseker 䜙䛻䜘䛳䛶㛤Ⓨ䛥䜜䛯ศ๭䞉㐜ᘏගᏛ⣔䛿 8 䛴䛾⊂❧䛧䛯⤖ᬗ⣲Ꮚ䛻䜘䛳䛶ᵓᡂ䛥䜜䛶䛚䜚䠈⤖ᬗ䛾 Bragg ᅇᢡ䛻䜘䛳䛶㖄┤ᩓ஘ᵓ㐀䜢ᐇ⌧䛩䜛䛣䛸䛷䠈㝈䜙䜜䛯䝇䝨䞊䝇ෆ䛷᭱䜒኱䛝䛺㐜ᘏ᫬㛫䜢⏕ᡂྍ⬟䛷䛒䜛䠊ྛศ๭䝟䝹䝇䛿䛭䜜䛮䜜䛾㐜ᘏ䝟䝇ෆ䛻䛚䛔䛶ྠᅇᩘ䛾཯ᑕ䠈ᒅᢡ䠄䜒䛧䛟䛿㏱㐣䠅䜢⤒䛶䠈ඖ䚻䛾ග㍈䛸ᖹ⾜䛺ྠ୍ග㍈ୖ䛻෌⤖ྜ䛥䜜䜛䛣䛸䛛䜙䠈ᙉᗘ䛾➼䛧䛔ศ๭䝟䝹䝇䛜ᚓ䜙䜜䠈௚䛾ගᏛ⣔䛸䛾ඹ⏝䜒ྍ⬟䛷䛒䜛䠊ྛ㐜ᘏ䝟䝇䛾ග㊰㛗䛿 4 䛴䛾⤖ᬗ䠄ྛ䝟䝇䛛
䜙 2 䛴䛪䛴䠅䛜ᅛᐃ䛥䜜䛯䇾I䇿Ꮠ䛾┤㐍䝇䝔䞊䝆䜢㖄┤᪉ྥ䛻⛣ື䛥䛫䜛䛣䛸䛷ㄪᩚ䛥䜜䜛䠊㛤Ⓨ䛥䜜䛯⿦⨨䛻䛚䛔䛶䠈᭱኱䛷⣙ 2.6 ns 䛾᫬㛫ᕪ䜢᭷䛩䜛 2 䛴䛾 X ⥺䝟䝹䝇䛾Ⓨ⏕䛜☜ㄆ䛥䜜䛶䛔䜛䠊ᙜึ䠈䝡䞊䝮ศ๭䛻䛿 Laue䠄㏱㐣䠅ᆺ䛾⤖ᬗ䛜⏝䛔䜙䜜䛶䛔䛯䛜䠈Bragg ᆺ⤖ᬗ䛸䛾 Bragg ゅ䛾ㄗᕪ䜔䠈Ἴ㠃䜈䛾ᙳ㡪䜢⪃៖䛧䠈⌧ᅾ䛷䛿඲䛶䛾⤖ᬗ䛻 Bragg ᆺ䜢᥇⏝䛧䛶䛔䜛䠊䝅䞁䝥䝹䛺㐜ᘏ᫬㛫ㄪᩚ䜢ྍ⬟䛸䛩䜛㖄┤ᩓ஘ᵓ㐀䜢ᐇ⌧䛩䜛Ⅽ䠈X ⥺䛾䜶䝛䝹䜼䞊䛸䝞䞁䝗ᖜ䛿฼⏝䛩䜛᱁Ꮚ㠃䛻䜘䛳䛶㞳ᩓⓗ䛻㝈ᐃ䛥䜜䜛䠊౛䛘䜀䠈Si(511) ฼⏝᫬䛿 X ⥺䛾䜶䝛䝹䜼䞊
8.39 keV䠈䝞䞁䝗ᖜ ∆E/E0 ≈ 8.3 × 10−6 䛸䛺䜚䠈Si(422) ฼⏝᫬䛿䛭䜜䛮䜜 7.91 keV䠈∆E/E0 ≈ 1.4 ×
10−5 䛸䛺䜛䠊䛣䜜䜙䛾㧗䛔༢Ⰽᛶ䛿኱䛝䛺䝁䝠䞊䝺䞁䝇᫬㛫䜢䜒䛯䜙䛩䛣䛸䛛䜙䠈䜘䜚ᗈ䛔ᩓ஘ゅ⠊ᅖ䛻䛚䛔䛶㧗䛔䝡䝆䝡䝸䝔䜱䜢᭷䛩䜛ᅇᢡ䝟䝍䞊䞁䜢Ⓨ⏕ྍ⬟䛷䛒䜚 [40]䠈XPCS ᐇ㦂䛻ᑐ䛧䛶᭷ຠ䛷䛒䜛䠊䛯䛰䛧䠈8 䛴䛾⊂❧䛧䛯⤖ᬗ䛻䜘䛳䛶ᵓᡂ䛥䜜䛶䛔䜛䛣䛸䛛䜙䠈䜰䝷䜲䝯䞁䝖䜔䜸䝨䝺䞊䝅䝵䞁䛜」㞧䛸䛺䜚䠈ᑠ䛥䛺䝞䞁䝗ᖜ䜒ྠᵝ䛻䠈ຠ⋡䛸䛔䛖㠃䛷䛿ጇ༠䛫䛦䜛䜢ᚓ䛺䛔䠊➨ 1 ❶㻌 ᗎㄽ

6

Stetsko 䜙䛻䜘䛳䛶䠈Bragg ゅ䛜 90°㏆䛔᱁Ꮚ㠃䜢฼⏝䛩䜛䛣䛸䛷䠈3 䛴䛾⤖ᬗ䛻䜘䜚ᵓᡂ䛥䜜䜛ศ๭䞉㐜ᘏගᏛ⣔䛜ᥦ᱌䛥䜜䛶䛔䜛䠊䝡䞊䝮䛾ศ๭䠈෌⤖ྜ䜢ᢸ䛖⤖ᬗ C0 䛻䜘䛳䛶཯ᑕἼ䛸ᒅᢡἼ䛸䛻ศ๭䛥䜜䛯䝟䝹䝇䛿䠈䛭䜜䛮䜜⤖ᬗ C1䠈C2 䛻䜘䜛ᚋ᪉ᩓ஘䛻䜘䛳䛶෌䜃 C0 䜈䛸ᡠ䛥䜜䠈ඖ䚻䛾ග㍈䛸䛿␗䛺䜛ග㍈ୖ䜈෌⤖ྜ䛥䜜䜛䠊⤖ᬗᮦᩱ䛸䛧䛶䝎䜲䝲䝰䞁䝗䜢㑅䜆䛣䛸䛷䠈཯ᑕ⋡䛾ྥୖ୪䜃䛻䠈ẚ㍑ⓗཌ䛔⤖ᬗ䛻䛚䛔䛶䜒 Bragg ᮲௳䜢‶䛯䛥䛺䛔Ἴ㛗ᇦ䛾 X ⥺䛻ᑐ䛧䛶㧗䛔㏱㐣⋡䛜ᚓ䜙䜜䠈௚䛾ᐇ㦂䛸䛾ྠ᫬฼⏝䛜ྍ⬟䛷䛒䜛䠊ᮏගᏛ⣔䛻䛚䛔䛶䜒䠈㧗ḟ䛾ᅇᢡ㠃䛜฼⏝䛥䜜䛶䛔䜛䠄ᅇᢡ䝞䞁䝗ᖜ䛜ᑠ䛥䛔䠅䛣䛸䛛䜙ຠ⋡䛾పୗ䛿ච䜜䛺䛔䠊Stetsko 䜙䛿䜘䜚㧗䛔ຠ⋡䜢ᚓ䜛䛯䜑䠈䝇䝨䜽䝖䝹䛾㔜」䛧䛺䛔 2 䛴䛾ศ๭䝟䝹䝇䜢
Ⓨ⏕䛥䛫䜛 2 Ⰽศ๭䜢ᥦ᱌䛧䛶䛔䜛䠊䜎䛯䠈䝇䝨䜽䝖䝹䛾㔜」䛧䛯ศ๭䝟䝹䝇䜢Ⓨ⏕䛥䛫䜛༢Ⰽศ๭䛾ሙྜ䠈⤖ᬗ C0 䛻㧗䛔ཌ䜏⢭ᗘ䛜せồ䛥䜜䜛䛜䠈2 Ⰽศ๭䛾ሙྜ䛿䠈Bragg ᅇᢡ䝞䞁䝗ᖜෆ䛻䛚䛔䛶㧗䛔཯ᑕ⋡䠈䛭䜜௨እ䛾Ἴ㛗ᇦ䛻ᑐ䛧䛶㧗䛔㏱㐣⋡䛥䛘ᚓ䜙䜜䜜䜀Ⰻ䛔Ⅽ䠈ᗈ䛔ཌ䜏⠊ᅖ䛜チᐜ䛥䜜䠈ཌ䜏ศᕸ䛻ᑐ䛧䛶䜒ᙳ㡪䛜ᑠ䛥䛔䠊༢Ⰽศ๭䛾Ⅽ䛻䛿䠈⤖ᬗ C1 䛸 C2 䛻ᑐ䛧䛶 Bragg ゅ 90°䛜ồ䜑䜙䜜䜛䛜䠈2 Ⰽศ๭䜢ᐇ⌧䛩䜛Ⅽ
䛻䛿䠈90°䛛䜙䜟䛪䛛䛻 Bragg ゅ䜢䛪䜙䛩ᚲせ䛜䛒䜛䠊ྠ୍䛾⤖ᬗ䠈ගᏛ㓄⨨䛻䛚䛔䛶୧ศ๭ཎ⌮䜢ᐇ⌧䛩䜛Ⅽ䠈ᙼ䜙䛿⤖ᬗ C1 䛸 C2 䛾ᗘ䜢ㄪᩚ䛧䠈᱁Ꮚᐃᩘ䜢䜟䛪䛛䛻ኚ໬䛥䛫䜛䛣䛸䜢ᥦ᱌䛧䛶䛔䜛䠊䛯䛰䛧䠈90°䛛䜙䜟䛪䛛䛻䛪䜜䛯཯ᑕゅ䛿㐜ᘏኚ᭦᫬䛻䝡䞊䝮䛾఩⨨䛪䜜䜢⏕䛨䛥䛫䜛䠊ㄽᩥ୰䛷䛿ၥ㢟ど䛥䜜䛶䛔䛺䛔䛜䠈ඹ⏝䛩䜛㞟ගගᏛ⣔䛻ไ㝈䜢䜒䛯䜙䛩䠊䛣䜜䜙⤖ᬗ⣲Ꮚ䜢⏝䛔䜛ගᏛ⣔䛻䛚䛔䛶⪃៖䛩䜉䛝஦䛸䛧䛶䠈䝞䞁䝗ᖜ䛾ไ㝈䛻䜘䜛䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䛜ᣲ䛢䜙䜜䜛䠊䝞䞁䝗ᖜ䠄࿘Ἴᩘ䠅䛸᫬㛫䛸䛿䝣䞊䝸䜶㛵ಀ䛜ᡂ䜚❧䛱䠈Bragg ᅇᢡ䛾䝞䞁䝗ᖜ䛻ᑐ䛩䜛᫬㛫୙☜ᐃᛶ䛾㛵ಀ䛻䜘䜚䠈

∆t ≈

2.76ℏ
∆E

(1.2)

䛛䜙䠈ᅇᢡ䛻䜘䜛䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䛜ぢ✚䜒䜙䜜䜛 [41]䠊౛䛘䜀䠈8.39 keV 䛻ᑐ䛩䜛 Si(511) 䝞䞁䝗ᖜ ∆E ≈ 70 meV 䛻ᑐ䛧䛶䛿 ∆t ≈ 26 fs䠈8.51 keV 䛻ᑐ䛩䜛 C(422) 䝞䞁䝗ᖜ ∆E ≈ 44 meV 䛻ᑐ䛧䛶䛿 ∆t ≈ 41 fs 䛸䛺䜚䠈XFEL 䛾䝟䝹䝇᫬㛫ᖜ䛸ྠ➼䠈䜒䛧䛟䛿䜘䜚኱䛝䛺᫬㛫ᖜ䛸䛺䜚䠈ᐇຠⓗ䛺᫬㛫ศゎ⬟䛾పୗ䛜⏕䛨䜛䠊᫬㛫ᖜ䛾ᣑ኱䜢 10 fs ௨ୗ䛻ᢚ䛘䜛Ⅽ䛻䛿䠈∆E > 200 meV 䜢‶䛯䛩ᅇᢡ㠃䜢฼⏝䛩䜛䛣䛸䛜ᮃ䜎䛧䛔䠊䜎䛯䠈䛭䛾䜘䛖䛺ᗈ䛔䝞䞁䝗ᖜ䛿䠈SASE XFEL 䛾䜘䛖䛺ẚ㍑ⓗᗈ䛔䝞䞁䝗ᖜ䜢ᣢ䛴ග※䛻ᑐ䛧䛶䠈ຠ⋡䛾ྥୖ䜒䜒䛯䜙䛩䠊

1.2㻌 ◳ 㼄 ⥺㡿ᇦ䛻䛚䛡䜛ศ๭䞉㐜ᘏගᏛ⣔
Table 1.1.

7Comparison of reported split-and-delay optical systems.
CrystalsMultilayer mirrors

Gratings

Roling et al.

David et al.

Roseker et al.

Stetsko et al.

Delay-time range

䕿a

䕧

䖂

䖂

Throughput

䖂

䕿b

䕧

䕧

Spatial profile

䕧

䕿

䕿

䕿

Temporal profile

䕿

䖂

䕧

䕧

Wavelength tunability

䖂

䕿c

䕧

䕧

Setup flexibility

䖂

䕧

䖂

䕿

Merit of self-seeding

䕧

䕧

䖂

䖂

a

The maximum range is ±20 ps at E0 = 5 keV.

bc

The throughput becomes lower with larger delay times.

A delay time being larger than 1 ps can be accessed only at E0 < 5 keV.

ྛศ๭䞉㐜ᘏගᏛ⣔䛾≉ᚩ䜢 Table 1.1 䛻䜎䛸䜑䜛䠊ᮏ◊✲䛷䛿䠈኱䛝䛺㐜ᘏ᫬㛫䛻ὀ┠䛧䠈⤖ᬗ⣲Ꮚ䛻ᇶ䛵䛟᪂䛯䛺ศ๭䞉㐜ᘏගᏛ⣔䜢ᥦ᱌䛩䜛䠊⤖ᬗᮦᩱ䛸䛧䛶䠈㧗ရ㉁䛛䛴኱䛝䛺༢⤖ᬗ䛜ධᡭྍ⬟䛺䝅䝸䝁䞁䜢⏝䛔䜛䠊Roseker 䜙䛾ගᏛ⣔䛸ྠᵝ䛻㧗䛔ỗ⏝ᛶ䛿☜ಖ䛧䛴䛴䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢฼⏝䛩䜛䛣䛸䛷ᵓ㐀ⓗ䛻Ᏻᐃ䛺ගᏛ⣔䜢ᵓ⠏䛧䠈ගᏛ⣲Ꮚ䛾䜰䝷䜲䝯䞁䝖䜔䜸䝨䝺䞊䝅䝵䞁䛾⡆᫆໬䜢ᐇ⌧䛩䜛䠊䜎䛯䠈䛒䜙䜖䜛㍈䛻ᑐ䛧䛶ㄪᩚ⮬⏤ᗘ䜢チ䛩஦䛷䠈Ἴ㛗䜔䝞䞁䝗ᖜ䛾⮬⏤ᗘ䜢㧗䜑䜛䠊䛣䛾ㄪᩚ⮬⏤ᗘ䛻䜘䜚 10 keV ௜㏆䛾䜶䝛䝹䜼䞊⠊ᅖ䛻ᑐ䛧䛶䜒పḟ䛾ᅇᢡ㠃䛜฼⏝䛷䛝䠈ຠ⋡䛾ྥୖ䠈䝟䝹䝇᫬㛫ᖜᣑ኱䛾ᢚไ䛜ྍ⬟䛸䛺䜛䠊పḟ䛾ᅇᢡ㠃䜢฼⏝䛧䛯䛸䛧䛶䜒䠈SASE฼⏝᫬䛻䛿ᩘ᱆䛾ຠ⋡పୗ䛿ච䜜䛺䛔䛜䠈᫖௒䠈䝉䝹䝣䝅䞊䝕䜱䞁䜾䛸࿧䜀䜜䜛ᡭἲ䛻䜘䜚䠈LCLS䛻䛚䛔䛶༢Ⰽᛶ䛾㧗䛔 XFEL 䛾Ⓨ᣺䛻ᡂຌ䛧䛶䛔䜛 [42]䠊䛭䛾䝞䞁䝗ᖜ䛿 ∆E/E0 ~ 5.0–14 × 10−5䛸䠈⤖ᬗ䛻䜘䜛 Bragg ᅇᢡ䝞䞁䝗ᖜ䛸ྠ➼䛺್䛜ሗ࿌䛥䜜䛶䛔䜛 [43]䠊ᙉᗘᏳᐃᛶ➼䛾ㄢ㢟䛿ṧ䛳䛶䛔䜛䜒䛾䛾䠈ᑗ᮶ⓗ䛻䛿୍⯡ⓗ䛻฼⏝䛥䜜䜛䛸⪃䛘䜙䜜䠈⤖ᬗ⣲Ꮚ䜢⏝䛔䛯ගᏛ⣔䛻ᑐ䛩䜛㈉⊩䛿኱䛝䛔䠊1.3 ୺せගᏛ⣲Ꮚ䛾㛤Ⓨືྥ㻌ᥦ᱌䛩䜛ศ๭䞉㐜ᘏගᏛ⣔䛾ᐇ⌧䛻䛿䠈㧗䛔⤖ᬗ᏶඲ᛶ䜢᭷䛩䜛䠈ᴟⷧ䝅䝸䝁䞁⤖ᬗ䛸䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛜ᚲせ୙ྍḞ䛷䛒䜛䠊ᮏ⠇䛻䛚䛔䛶䠈䛭䜜䛮䜜䛾⣲Ꮚ䛾ୡ⏺ⓗ䛺㛤Ⓨືྥ䜢⤂௓䛩䜛䠊➨ 1 ❶㻌 ᗎㄽ

8◊☻ᢏ⾡䛾ྥୖ䛻䜘䜚ཌ䜏ᩘ µm 䛾䝅䝸䝁䞁䜴䜶䝝䛜ᕷሙ䛻ぢ䜙䜜䜛䛜䠈඲㠃䛜ⷧ䛔ሙྜ䠈⮬㔜䛷䛥䛘䜒ṍ䜣䛷䛧䜎䛔䠈཯ᑕἼ䛻ᑐ䛧䛶኱䛝䛺Ἴ㠃䛾஘䜜䛜䜒䛯䜙䛥䜜䜛䠊䜎䛯䠈ᶵᲔⓗ䛺స⏝䛾ാ䛟ຍᕤἲ䛷䛿⤖ᬗᛶ䛾஘䜜䜢᏶඲䛻㜵䛠䛣䛸䛿ᅔ㞴䛷䛒䜚䠈⣧໬Ꮫⓗ䛺䜶䝑䝏䞁䜾ᡭἲ䛾฼⏝䛜኱๓ᥦ䛸䛺䜛䠊
Roseker 䜙䛿ಖᣢ⏝䛾ཌ䛔㡿ᇦ䛿☜ಖ䛧䛴䛴䠈䛒䜛୍㠃䛾䜏䜢䜴䜵䝑䝖䜶䝑䝏䞁䜾䛻䜘䜚ᴂᙧ䛻ⷧ໬䛧䛯 [37]䠊䛧䛛䛧䠈ཌ䜏 20 µm ௨ୗ䛾㡿ᇦ䛻䛚䛔䛶䛿㧗䛔⤖ᬗ᏶඲ᛶ䛿ᐇ⌧䛥䜜䛶䛚䜙䛪䠈䜎䛯ཎ⌮ⓗ䛻ཌ䜏ศᕸ䛾ᢚไ䜒୙ྍ⬟䛷䛒䜛䠊
Feng 䜙䛿 Norcada Inc.䛸䛾ඹྠ◊✲䛻䜘䜚䠈SOI䠄silicon-on-insulator䠅〇㐀ᢏ⾡䜢ᛂ⏝䛧䛯䠈ཌ䛔䝃䝫䞊䝖㡿ᇦ䜢᭷䛩䜛䝅䝸䝁䞁䝯䞁䝤䝺䞁䜢㛤Ⓨ䛧䛯 [44]䠊⇕㓟໬⭷ᒙ䜢௓䛧䛶䝃䝫䞊䝖䜴䜶䝝䛸䝇䝥䝸䝑䝍䜴䜶䝝䛸䜢ᙇ䜚ྜ䜟䛫䜛䠊䝇䝥䝸䝑䝍䜴䜶䝝㒊䜢◊☻䛻䜘䜚┠ⓗཌ䜏䜎䛷ⷧ໬䛧䛯ᚋ䠈䝃䝫䞊䝖䜴䜶䝝䛾୍㒊䜢䜴䜵䝑䝖䜶䝑䝏䞁䜾䛻䜘䜚㝖ཤ䛩䜛䠊᭱ᚋ䛻ṧ䛳䛯㓟໬⭷ᒙ䜢䝣䝑㓟ฎ⌮䛻䜘䜚㝖ཤ䛩䜛䠊
Laue 㓄⨨䛾ⓑⰍ X ⥺䝖䝫䜾䝷䝣䜱䞊䛻䜘䜚Ḟ㝗䛾ᑟධ䛜↓䛔䛣䛸䛿♧䛥䜜䛶䛔䜛䛜䠈ṧ␃䛧䛯㓟໬⭷ᒙ⏤᮶䛾⭷ᛂຊ䛻䜘䛳䛶䜟䛪䛛䛻ṍ䜣䛷䛔䜛䛣䛸䛜☜ㄆ䛥䜜䛶䛔䜛䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛿 1 䛴䛾⣲Ꮚ୰䛻ᑐྥ䛧䛯 2 䛴䛾㠃䜢ᣢ䛴⤖ᬗ⣲Ꮚ䛷䛒䜛䠊䛭䜜䛮䜜䛾᱁Ꮚ㠃䛻䛿᏶඲䛺ᖹ⾜ᛶ䛜ಖド䛥䜜䛶䛔䜛Ⅽ䠈അᩘᅇ཯ᑕ䛥䜜䛯 X ⥺䛾ග㍈䛿ධᑕ X ⥺䛾ග㍈䛸᏶඲䛻ᖹ⾜䛸䛺䜛䠊䛭䛾฼౽ᛶᨾ䛻䠈ᵝ䚻䛺ᐇ㦂䛻䛚䛔䛶䝰䝜䜽䝻䝯䞊䝍䛸䛧䛶฼⏝䛥䜜䛶䛔䜛 [45]䠊
䛧䛛䛧䠈୍⯡ⓗ䛻཯ᑕ㠃䛸䛺䜛ෆቨ㒊䛻䛿䝇䜽䝷䝑䝏䜔Ḟ㝗➼䛾ከᩘ䛾ṍ䜏䛜ṧᏑ䛧䛶䛔䜛䛣䛸䛜ከ䛟䠈䜎䛯㐣ศ䛺䜶䝑䝏䞁䜾䛻䜘䜛⾲㠃ᖹᆠᛶ䛾ᝏ໬䜒☜ㄆ䛥䜜䜛䠊䛭䛾䜘䛖䛺⤖ᬗᏛⓗ䝎䝯䞊䝆䜔⾲㠃⢒䛥䛿཯ᑕ X ⥺䛻ᑐ䛧䛶Ἴ㠃䜔䝇䝨䜽䝖䝹䛾஘䜜䜢䜒䛯䜙䛩Ⅽ䠈XPCS 䜔䝁䝠䞊䝺䞁䝖ᅇᢡ䜲䝯䞊䝆䞁䜾䠄coherent diffractive imaging䠈CDI䠅➼䠈ṇ䛧䛟つᐃ䛥䜜䛯Ἴ㠃䜢せồ䛩䜛䝁䝠䞊䝺䞁䝖ᅇᢡᐇ㦂䛻䛿⏝䛔䜙䜜䛶䛣䛺䛛䛳䛯䠊㏆ᖺ䠈㧗ရ㉁䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䝰䝜䜽䝻䝯䞊䝍䜢ᑟධ䛧䛯䝁䝠䞊䝺䞁䝖ᅇᢡᐇ㦂⏝䝡䞊䝮䝷䜲䞁[46] 䜔䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗᑓ⏝䛾㧗⢭ᗘ◊☻ᢏ⾡ [47] 䛜ሗ࿌䛥䜜䛶䛔䜛䜒䛾䛾䠈䛔䛪䜜䛻䛚䛔䛶䜒⤖ᬗᏛⓗ䛺䝎䝯䞊䝆䛾᏶඲㝖ཤ䛻䛿⮳䛳䛶䛔䛺䛔䠊ᮏ◊✲䛷䛿䠈኱Ẽᅽ䝥䝷䝈䝬䜢⏝䛔䛯⊂⮬䛾ຍᕤᡭἲ䛻ᇶ䛵䛝䠈䜸䞊䝹䝅䝸䝁䞁䛾ⷧ䛔᏶඲⤖ᬗ䛾㛤Ⓨ䜢ヨ䜏䜛䠊䜎䛯䠈ᮏᡭἲ䜢䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃ຍᕤ䜈䛸ᣑᙇ䛥䛫䠈⾲㠃ᖹᆠᛶ䠈⢒䛥䛾ᝏ໬↓䛟䠈ṧᏑ䛩䜛⤖ᬗᏛⓗ䝎䝯䞊䝆䛾㝖ཤ䜢⾜䛖䠊

1.4 ᮏㄽᩥ䛾┠ⓗ䛸ᵓᡂ㻌ᮏ◊✲䛷䛿䠈2 䛴䛾 XFEL 䝟䝹䝇䜢⏝䛔䛶䠈䝣䜵䝮䝖⛊䛛䜙ᩘⓒ䝢䝁⛊䛻Ώ䜛᫬㛫㡿ᇦ䛾䝎䜲䝘

1.4㻌 ᮏㄽᩥ䛾┠ⓗ䛸ᵓᡂ䝭䜽䝇9ᐃ䜢ᐇ⌧䛩䜛Ⅽ䠈୺せ䛺⤖ᬗ⣲Ꮚ䜒ྵ䜑䠈᪂䛯䛺ศ๭䞉㐜ᘏගᏛ⣔䛾ໟᣓⓗ䛺㛤Ⓨ䜢┠ⓗ䛸䛩䜛䠊䝅䞁䝥䝹䛛䛴Ᏻᐃ䛺ගᏛ㓄⨨䜢⪃᱌䛧䠈ᗈ䛔 X ⥺Ἴ㛗ᇦ䜢䜹䝞䞊䛩䜛䠊㞟ගගᏛ⣔䛸ඹ⏝䛧䛯㝿䛻䜒䠈⡆᫆䛻ศ๭䝡䞊䝮䛾✵㛫ⓗ䛺㔜」䜢㐩ᡂ䛩䜛Ⅽ䛾䜰䝷䜲䝯䞁䝖䛻㛵䛧䛶㆟ㄽ䛧䠈⣲Ꮚ䛾䜰䝷䜲䝯䞁䝖䠈䜸䝨䝺䞊䝅䝵䞁䛾ᐜ᫆䛺䝅䝇䝔䝮䛸䛧䛶䛾☜❧䜢┠ᣦ䛩䠊ᮏㄽᩥ䛿䛣䜜䜙䛾┠ⓗ䜢㐩ᡂ䛩䜛Ⅽ䛻⾜䜟䜜䛯୍㐃䛾◊✲䜢䜎䛸䜑䛯䜒䛾䛷䛒䜚䠈඲ 6 ❶䛷ᵓᡂ䛥䜜䛶䛔䜛䠊➨ 2 ❶䛻䛚䛔䛶䠈ᥦ᱌䛩䜛ศ๭䞉㐜ᘏගᏛ⣔䛾⤖ᬗ㓄⨨䜔タィᣦ㔪䠈≉ᚩ䜢♧䛩䠊䛭䛧䛶⤖ᬗ⣲Ꮚ䜈䛾せồ䛻㛵䛧䛶グ㍕䛧䠈ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟䛾ぢ✚䜒䜚䜢⾜䛖䠊➨ 3 ❶䛻䛚䛔䛶䠈⊂⮬䛾⤖ᬗຍᕤᡭἲ䛷䛒䜛 PCVM䠄Plasma Chemical Vaporization Machining䠅䛻㛵䛧䛶≉ᚩ䜢ゎㄝ䛩䜛䠊䛭䛧䛶ᴟⷧ䜸䞊䝹䝅䝸䝁䞁⤖ᬗ䛾㛤Ⓨ䜔䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨฎ⌮䛾ලయⓗ䛺䝥䝻䝉䝇䛻㛵䛧䛶㏙䜉䠈SPring-8 䛻䛚䛡䜛⤖ᬗᛶホ౯⤖ᯝ䜢♧䛩䠊
➨ 4 ❶䛻䛚䛔䛶䠈ගᏛ⣲Ꮚ䛾ᐜ᫆䛛䛴⢭ᐦ䛺䜰䝷䜲䝯䞁䝖䠈䜸䝨䝺䞊䝅䝵䞁䜢┠ᣦ䛧䠈㞟ගගᏛ⣔䛸ඹ⏝᫬䛾᭷ຠ䛺䜰䝷䜲䝯䞁䝖ᡭἲ䛻㛵䛧䛶㆟ㄽ䛩䜛䠊ྛㄪᩚ䝇䝔䞊䝆䛻ồ䜑䜙䜜䜛ศゎ⬟䜢䠈ᗄఱᏛ䠈ග⥺㏣㊧ィ⟬䜢⏝䛔䛶ᑟฟ䛩䜛䠊䛭䛧䛶ἼືගᏛィ⟬䛻䜘䛳䛶ᗄఱᏛⓗどⅬ䛛䜙䛾ぢ✚䜒䜚䛾᭷ຠᛶ䜢♧䛩䠊➨ 5 ❶䛻䛚䛔䛶䠈㛤Ⓨ䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂䛻㛵䛧䛶グ㏙䛩䜛䠊SPring-8 䛻䛚䛔䛶⪃᱌䛧䛯䜰䝷䜲䝯䞁䝖ᡭἲ䜢ᐇド䛧䠈㐜ᘏ᫬㛫ㄪᩚ䛾ᙳ㡪䜔ගᏛ⣔䛾䝇䝹䞊䝥䝑䝖䜢ㄪᰝ䛩䜛䠊
䜎䛯䠈SACLA 䛻䛚䛔䛶⾜䛳䛯ᐇ㦂䛻㛵䛧䛶䜒⤂௓䛩䜛䠊ศ๭䞉㐜ᘏගᏛ⣔䜢⏝䛔䛯᫬㛫ศゎ䛻ྥ䛡䠈ᙉᗘ䜔㐜ᘏ᫬㛫ᐃ䛾ᐇ⌧ྍ⬟ᛶ䜢᳨ウ䛧䠈ศ๭䝡䞊䝮䛾㞟ග≉ᛶ䜢♧䛩䠊᭱ᚋ䛻➨ 6 ❶䛻䛚䛔䛶䠈ᮏ◊✲䛷ᚓ䜙䜜䛯ᡂᯝ䜢⥲ᣓ䛧䠈ᑗ᮶ᒎᮃ䜢㏙䜉䜛䠊

ᐃ

➨2❶

ศ๭䞉㐜ᘏගᏛ⣔䛾タィ
2.1 ⥴ゝ㻌
Roseker 䜙䛻䜘䜚㛤Ⓨ䛥䜜䛯ศ๭䞉㐜ᘏගᏛ⣔ [36, 37] 䛿᪤䛻 LCLS 䛻䛚䛔䛶䝁䝭䝑䝅䝵䝙䞁䜾䛜⾜䜟䜜䛶䛔䜛䛜 [38]䠈㞴⯟䛜⥆䛔䛶䛔䜛䠊せᅉ䛾 1 䛴䛸䛧䛶䠈8 ಶ䜒䛾⊂❧䛧䛯⤖ᬗ䜢⏝䛔䛶䛔䜛஦䠈䜎䛯ග㊰㛗ኚ᭦䛾㝿䛻୧㐜ᘏ䝟䝇䛻Ώ䜛 4 䛴䛾⤖ᬗ䜢ື䛛䛩Ⅼ䛜ᣲ䛢䜙䜜䜛䠊඲䛶䛾⣲Ꮚ䛜⊂❧䛧䛶䛔䜛䛣䛸䛛䜙䠈䜰䝷䜲䝯䞁䝖䛾㝿䛾䇾ᇶ‽䇿䜢ኻ䛖䛣䛸䛸䛺䜛䠊䜎䛯䠈䝇䝔䞊䝆䛻䜘䜛⛣ື䛿⤖ᬗゅᗘ䛾ኚ໬䜢వ൤䛺䛟䛧䠈෌䜰䝷䜲䝯䞁䝖䛜ᚲせ䛸䛺䜛䠊୧㐜ᘏ䝟䝇䛾⤖ᬗ䜢ື䛛䛩䛣䛸䛷䠈෌䜃ᇶ‽䜢ኻ䛔䠈䜰䝷䜲䝯䞁䝖䜔䜸䝨䝺䞊䝅䝵䞁䛜ΰ㏞䜢ᴟ䜑䜛䠊ᥦ᱌䛩䜛ගᏛ⣔䛻䛚䛔䛶䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢⏝䛔䜛䛣䛸䛷ᇶ‽䜢☜ಖ䛧䠈ග㊰㛗䛾ㄪᩚ䛿 1 䛴䛾㐜ᘏ䝟䝇䛾䜏䛻ᑐ䛧䛶⾜䛖䛣䛸䛷䜰䝷䜲䝯䞁䝖䠈䜸䝨䝺䞊䝅䝵䞁䛾⡆␎໬䜢㐩ᡂ䛩䜛䠊ᮏ❶䛷䛿ศ๭䞉㐜ᘏගᏛ⣔䛾ගᏛ㓄⨨䜢♧䛧䠈≉ᚩ䜔タィᣦ㔪䜢♧䛩䠊䛭䛧䛶ᮏගᏛ⣔䜢ᵓ⠏䛩䜛Ⅽ䛻ᚲせ୙ྍḞ䛺⤖ᬗ⣲Ꮚ䠈≉䛻䝡䞊䝮䝇䝥䝸䝑䝍䛸䛧䛶ᶵ⬟䛩䜛ᴟⷧ⤖ᬗ䛻ᑐ䛩䜛せồ䜢ືຊᏛ⌮ㄽ䠄௜㘓 A䠈䜒䛧䛟䛿 [48, 49] 䜢ཧ↷䠅䛻ᇶ䛵䛝᳨ウ䛩䜛䠊ᐇ㝿䛻ไᚚ⣔䜢ᵓ⠏䛧䛯ୖ䛷䠈ᮇᚅ䛥䜜䜛ᛶ⬟䜢⤂௓䛩䜛䠊

2.2 ศ๭䞉㐜ᘏගᏛ⣔䛾ගᏛ㓄⨨㻌ᥦ᱌䛩䜛ගᏛ㓄⨨䜢 Fig. 2.1 䛻♧䛩䠊ග㊰㛗ྍኚ䠄upper䠅䝟䝇䛻䛿䝡䞊䝮䝇䝥䝸䝑䝍䞉䝡䞊䝮䝬䞊䝆䝱䞊䠄BS䞉BM䠅䛸䛧䛶ᶵ⬟䛩䜛 2 䛴䛾ᴟⷧ⤖ᬗ䛸 2 䛴䛾ཌ䛔⤖ᬗ䠄BR1䞉BR2䠅䛜㓄⨨䛥䜜䛶䛔䜛䠊ග㊰㛗ᅛᐃ䠄lower䠅䝟䝇䛻䛿 2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䠄CC1䞉CC2䠅䛜⏝䛔䜙䜜䛶䛔䜛䠊2 䛴䛾 BR ⤖ᬗ䜢䛭䜜䛮䜜 X ⥺䝟䝇䛸ᖹ⾜䛻䝉䝑䝖䛥䜜䛯 2θ1䠈2θ2 ㍈䛻ἢ䛳䛶┤⥺ⓗ䛻⛣ື䛥䛫䜛䛣䛸䛷䠈upper䝟䝇䛾ග㊰㛗䜢ኚ໬䛥䛫䠈2 䛴䛾ศ๭䝟䝹䝇㛫䛾᫬㛫ᕪ䜢ㄪᩚ䛩䜛䠊ᮏගᏛ㓄⨨䛾᭱኱䛾≉ᚩ䛸䛧䛶䠈lower 䝟䝇䜢䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛷ᵓᡂ䛧䛯Ⅼ䛜ᣲ䛢䜙䜜䜛䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛻䜘䜚അᩘᅇ཯11

➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

12Fig. 2.1.

Schematic diagram of the optical layout of the split-and-delay optical system.

Crystals BS, BRs, BM, and CCs represent the beam splitter, the beam reflectors, the beam
merger, and the channel-cut crystals. Angles of linear translation arms to mount BR1 andBR2 are shown as 2θ1 and 2θ2, respectively. Right-upper figure shows the major four
rotation axes in X-ray diffraction.

ᑕ䛥䜜䛯 X ⥺䛾㐍⾜᪉ྥ䛿䠈᏶඲䛻ᖹ⾜ᛶ䛾ಖド䛥䜜䛯᱁Ꮚ㠃䜢ᇶ‽䛻཯ᑕ䛜⏕䛨䜛Ⅽ䠈ධᑕ X⥺䛸䛾ᖹ⾜ᛶ䛜ಖ䛯䜜䜛䠊䜎䛯䠈Fig. 2.1 䛾䜘䛖䛻 2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢䠄 +, −, −, + 䠅㓄⨨䛸䛩䜛䛣䛸䛷䠈lower 䝡䞊䝮䛾ග㍈఩⨨䜒ಖᏑ䛥䛫䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊ගᏛ⣲Ꮚ䛾䜰䝷䜲䝯䞁䝖䛾㝿䠈lower䝟䝇䛻ᑐ䛧䛶᭱ึ䛾ㄪᩚ௨㝆䛾෌䜰䝷䜲䝯䞁䝖䛿⾜䛖ᚲせ䛜↓䛔䠊ᚑ䛳䛶䠈ᐇ㦂ᮇ㛫୰ᖖ䛻䇾ᇶ‽䇿䛸䛺䜚ᚓ䜛䝡䞊䝮䛜Ᏻᐃⓗ䛻౪⤥䛥䜜䜛஦䛸䛺䜚䠈upper 䝟䝇䛾䜰䝷䜲䝯䞁䝖䜔ගᏛ⣔䛾䜸䝨䝺䞊䝅䝵䞁䛾๻ⓗ䛺⡆␎໬䛜ྍ⬟䛷䛒䜛䠊⤖ᬗ BR1䠈BR2 䛾⛣ື㍈ゅᗘ䛷䛒䜛 2θ1䠈2θ2 䜒ྵ䜑䠈඲⤖ᬗ䛾ゅᗘ䠄ω䠈χ䠅䜢ㄪᩚྍ⬟䛸䛩䜛䠊
䛣䛾ゅᗘ䛾⮬⏤ᗘ䛿䛣䜜䜎䛷ᥦ᱌䛥䜜䛶䛔䜛⤖ᬗ⣲Ꮚ䛻ᇶ䛵䛟ศ๭䞉㐜ᘏගᏛ⣔ [36–39] 䛻䛿↓䛔≉ᚩ䛷䛒䜚䠈฼⏝ྍ⬟䛺 X ⥺䛾Ἴ㛗䜔䛭䛾䝞䞁䝗ᖜ䛻ᑐ䛧䛶䠈ᖜᗈ䛔㑅ᢥ⫥䛜チᐜ䛥䜜䜛䠊᭦䛻䠈ᮏගᏛ⣔䛻䛚䛔䛶୧㐜ᘏ䝟䝇䛿஫䛔䛻⊂❧䛧䛶䛔䜛Ⅽ䠈ຍ㏿ჾ䝧䞊䝇䛾ᡭἲ䛸䛾ඹ⏝䛻䜘䜚䠈኱䛝䛺᫬㛫ᕪ䜢᭷䛩䜛 2 Ⰽ XFEL 䛾⏕ᡂ䛜ྍ⬟䛷䛒䜛䠊

2.2.1 ᅇᢡ㠃䛾᳨ウ㻌
Table 2.1 䛻 SACLA BL3 䛾୺せ䛺䝟䝷䝯䞊䝍䜢䜎䛸䜑䜛 [50]䠊SACLA 䛿 10 keV 䜢ᇶ‽䛸䛧䛶䠈
4.5 䛛䜙 20 keV 䛻Ώ䜛ᖜᗈ䛔Ἴ㛗ᇦ䛻䛚䛔䛶 XFEL 䛾Ⓨ᣺䛜ྍ⬟䛷䛒䜛䠊ᮏ㡯䛷䛿 10 keV 䛻䝍䞊

2.2㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ගᏛ㓄⨨
Table 2.1.

Characteristics of SACLA XFEL pulses at BL3 [50].

Photon energy range

4.5–20 keV

Pulse energy

0.31–0.78 mJ/pulse @10 keV

Divergence

1.9 µrad FWHM @10 keV

Beam size

190 µm FWHM @EH1, 10 keV

Pulse duration
Bandwidth (∆E/E0)

Table 2.2.

6–30 fs FWHM
1–5 × 10−3Comparison of various diffraction planes at 10 keV.

Diffraction
Bragg angle

13

Bandwidth

Expansion of durationa

plane

Delay on upper branch(D = 0.5 m)

Si(111)

11.4°

1300 meV

1.4 fs0.26 nsSi(220)18.8°

560 meV

3.2 fs0.70 nsSi(311)

22.2°

270 meV

6.6 fs

0.96 nsSi(400)27.2°

240 meV

7.4 fs1.39 ns

Si(331)29.8°

130 meV

14 fs

1.65 nsSi(422)34.0°

140 meV

13 fs

2.09 ns

Si(511)/(333)36.4°

83 meV

21 fs

2.35 nsSi(440)40.2°

91 meV

20 fs

2.78 nsa

The expansions were calculated from the Fourier relation between time and frequency,

Eq. (1.2).

䝀䝑䝖䜢タᐃ䛧䠈฼⏝䛩䜛ᅇᢡ㠃䠈䛭䛧䛶ศ๭䞉㐜ᘏගᏛ⣔䛾チᐜἼ㛗ᇦ䛻῝䛟㛵㐃䛩䜛䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ᑍἲ䜢Ỵᐃ䛩䜛䠊ྛᅇᢡ㠃฼⏝᫬䛾 10 keV 䛻䛚䛡䜛 Bragg ゅ䛸䝞䞁䝗ᖜ䠄Darwin ᖜ䠅䠈ᘧ䠄1.2䠅䛛䜙ぢ✚䜒䜙䜜䜛᫬㛫ᖜ䛾ᣑ኱᫬㛫䜢 Table 2.2 䛻♧䛩䠊SACLA 䛾䝟䝹䝇᫬㛫ᖜ䛿䠈SASE 䝇䝨䜽䝖䝹䛾䝇䝟䜲䜽ᖜ
䛛䜙 10 fs ௨ୗ䛷䛒䜛஦䛷䛒䜛䛣䛸䛜ண᝿䛥䜜䛶䛚䜚䠈᭦䛻⣙ 4.5 fs 䜎䛷䛿ᅽ⦰䛜ྍ⬟䛷䛒䜛䛸ぢ✚䜒䜙䜜䛶䛔䜛 [51]䠊䜎䛯䠈䝟䝹䝇ᙉᗘ䛾⤫ィホ౯䛛䜙䠈8 keV 䛻䛚䛔䛶 5.2 fs 䛸䛔䛖ሗ࿌䜒䛒䜛 [52]䠊ᚑ䛳䛶䠈䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䛿 5 fs ௨ୗ䛷䛒䜛䛣䛸䛜ᮃ䜎䛧䛟䠈Si(111) 䜒䛧䛟䛿 Si(220) 䛻⤠䜙䜜䜛䠊䛣䛣䛷䠈㐩ᡂྍ⬟䛺㐜ᘏ᫬㛫䛻㛵䛧䛶䜒᳨ウ䛩䜛䠊┤㐍䛩䜛ග䛻ᑐ䛩䜛 upper 䝡䞊䝮䛾㐜ᘏ᫬㛫䛿௨ୗ䛾䜘䛖䛻ぢ✚䜒䜙䜜䜛䠊➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

14∆τ up =

2 D (1 − cos 2θ B )
c

(2.1)

䛣䛣䛷䠈c = 2.998 × 108 m/s 䛿ග㏿䛷䛒䜚䠈D 䛿㞄᥋䛩䜛ᴟⷧ⤖ᬗ䛸ཌ䛔⤖ᬗ䛸䛾㛫䛾㊥㞳䛷䛒䜛䠊኱䛝䛺㐜ᘏ᫬㛫䛿 D 䜢኱䛝䛟䛩䜛䛣䛸䛷ᚓ䜙䜜䜛䛜䠈䝡䞊䝮䝷䜲䞁䜈䛾ᑟධ䜢⪃៖䛩䜛㝿䠈䝁䞁䝟䜽䝖䛺ගᏛ⣔䛷䛒䜛䛣䛸䛜㔜せ䛷䛒䜛䠊䛣䛣䛷䛿 BS–BM 㛫䛾㊥㞳 l0 䛜 1 m ௨ୗ䛷䛒䜛ගᏛ⣔䜢⪃䛘䠈᭱኱䛾 D 䜢 0.5 m 䛸䛧䛯㝿䛻ᚓ䜙䜜䜛᭱኱㐜ᘏ᫬㛫䜢 Table 2.2 䛻♧䛩䠊Si(111) 䛸 Si(220) 䜢ẚ㍑䛩䜛䛸䠈400 ps ௨ୖ䛾㛤䛝䛜䛒䜛䠊䜎䛯䠈1 ns 䛾㐜ᘏ䜢㐩ᡂ䛩䜛Ⅽ䛻䛿䠈Si(111) 䛾ሙྜ᭱ప䛷䜒 D =1.9 m 䛜ᚲせ䛷䛒䜛䛾䛻ᑐ䛧䠈Si(220) 䛾ሙྜ D = 0.7 m 䛷༑ศ䛷䛒䜛䠊ᐇ㝿䛻䛿 lower 䝟䝇䛻䛚䛔䛶䜒㐜ᘏ䛜⏕䛨䜛Ⅽ䠈᭦䛻኱䛝䛺 D 䛜ᚲせ䛸䛺䜚䠈ᑗ᮶ᛶ䜢⪃៖䛩䜛䛸 Si(111) 䛿㐺䛥䛺䛔䠊Si(220) 䜢฼⏝䛩䜛㝿䠈ຠ⋡䛸䛔䛖㠃䛷䜒䝯䝸䝑䝖䛿኱䛝䛔䠊Roseker 䜙䜔 Stetsko 䜙䜘䜛ศ๭䞉㐜ᘏගᏛ⣔ [36–39] 䛿䝞䞁䝗ᖜ 100 meV ௨ୗ䛾ᅇᢡ㠃䜢฼⏝䛧䛶䛔䜛䛜䠈Si(220) 䛾䝞䞁䝗ᖜ䛿 10
keV 䛻䛚䛔䛶⣙ 560 meV 䛷䛒䜚䠈༢⣧䛻⪃䛘䛶 5 ಸ௨ୖ䛾ຠ⋡䛜ᚓ䜙䜜䜛䠊䜎䛯䠈Stetsko 䜙䛜ᥦ᱌䛩䜛 2 Ⰽศ๭䛻䜘䜛㧗ຠ⋡䛺䝡䞊䝮ศ๭䜒䠈ᨺᑕග᪋タ䛷ᗈ䛟౑⏝䛥䜜䛶䛔䜛 Si(111) 䝰䝜䜽䝻䝯䞊䝍䜔䝉䝹䝣䝅䞊䝕䜱䞁䜾䛻䜘䜚ᚓ䜙䜜䜛䝞䞁䝗ᖜ ∆E ~ 0.5–1.4 eV FWHM [43] 䛾 X ⥺䛻ᑐ䛧䛶䜒༑ศ㐺⏝ྍ⬟䛷䛒䜛 䠊

2.2.2 䝏䝱䝛䝹䜹䝑䝖⤖ᬗᑍἲ䛾᳨ウ㻌௨ୖ䛾⌮⏤䛛䜙䠈ᮏ◊✲䛷䛿 Si(220) ᅇᢡ䛾฼⏝䜢᳨ウ䛩䜛䠊䛭䛾㝿䠈lower 䝟䝇䛾チᐜྍ⬟䛺 X ⥺䜶䝛䝹䜼䞊⠊ᅖ䛿䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ᑍἲ䛻䜘䛳䛶Ỵᐃ䛥䜜䜛䠊䛣䛣䛷䠈Fig. 2.2 䛾䜘䛖䛻ᑍἲ䛻ไ㝈䜢タ䛡䜛䠊▷㎶୰ᚰ䜢ᅇ㌿㍈䛻ྲྀ䜛䛣䛸䛷䠈฼⏝ྍ⬟䛺 X ⥺䜶䝛䝹䜼䞊䛾ୗ㝈䠄Emin䠅䠈ୖ㝈䠄Emax䠅䛿ᘧ䠄1.1䠅䜘䜚䛭䜜䛮䜜E min(max) =hc
2d sin θ max(min)(2.2)

䛸ồ䜑䜙䜜䜛䠊䛣䛣䛷 h 䛿䝥䝷䞁䜽ᐃᩘ䠈θmax䠄θmin䠅䛿᭱኱䠄᭱ᑠ䠅Bragg ゅ䛷䛒䜚䠈d 䛿 1.9202 Å 䛸䛺䜛䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛿⤖ᬗᛶ䛾ᴟ䜑䛶㧗䛔 FZ䠄floating zone䠅ἲ䛷ᡂ㛗䛥䜜䛯䝅䝸䝁䞁䜲䞁䝂䝑䝖䛛䜙ษ䜚ฟ䛥䜜䜛䠊୍⯡ⓗ䛺 FZ 䜲䞁䝂䝑䝖䛾ᚄ䛿⣙ 4 䜲䞁䝏䠄~ 100 mm䠅䛷䛒䜛䠊⣬㠃ዟ⾜䛝᪉ྥ䛸䛺䜛䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾㧗䛥䜢 H 䛸䛚䛝䠈䜲䞁䝂䝑䝖䛾᭱እ㒊 5 mm 䜢౑⏝䛧䛺䛔䛸䛩䜛䛸䠈䜼䝱䝑䝥ᖜ G䛾ไ㝈䛸䛧䛶௨ୗ䛜୚䛘䜙䜜䜛䠊

2.2㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ගᏛ㓄⨨

Fig. 2.2.

15

Dimensions of CC1. Those of CC2 are mirror symmetry. Unit is mm.

( G + 20 ) < 902 − H 2
2

(2.3)

⤖ᬗ䛾ಖᣢ➼䜢⪃៖䛧䠈H 䛿 70 mm 䛸䛧䛯䠊ᚑ䛳䛶 G < 36 mm 䛾ไ㝈䛜⏕䛨䠈ᮏ◊✲䛷䛿 G = 30mm 䜢᥇⏝䛧䛯䠊䜎䛯䠈඲Ἴ㛗⠊ᅖ䛻Ώ䛳䛶㐜ᘏ᫬㛫 0 䜢⏕ᡂ䛩䜛Ⅽ䛻䛿䠈D 䜢 CC ෆ䛾཯ᑕⅬ㛫䛾᭱ᑠ㊥㞳 Dmin ௨ୗ䛻タᐃ䛩䜛ᚲせ䛜䛒䜛䠊䛧䛛䛧䠈D 䛜ᑠ䛥䛩䛞䜛ሙྜ䠈ᴟⷧ⤖ᬗ䛾ไᚚ⣔䛸 BR⤖ᬗ䛾ไᚚ⣔䛸䛾ᖸ΅䛜ၥ㢟䛸䛺䜛䛯䜑䠈Dmin > 60 mm 䛜ᮃ䜎䛧䛔䠊ᚑ䛳䛶 G = 30 mm 䜘䜚䠈⤖ᬗ➃
䛛䜙㛗㎶㒊䜎䛷䛾㛗䛥 w > 52 mm 䛸䛔䛖ไ㝈䛜タ䛡䜙䜜䠈w = 55 mm 䜢᥇⏝䛧䛯䠊㛗ᡭ᪉ྥ䛾⤖ᬗ㛗䛥 W 䛻㛵䛧䛶䛿䠈䜲䞁䝂䝑䝖䛛䜙䛾ไ⣙䛻䜘䜚௒ᅇ䛿 130 mm 䛜㝈⏺䛷䛒䛳䛯Ⅽ䠈θmax䠈θmin 䛿䛭䜜䛮䜜 28.6°䠈15.3°䛸䛺䛳䛯䠊ᚑ䛳䛶䠈 lower 䝟䝇䛾チᐜἼ㛗⠊ᅖ䛿䠈ᘧ䠄 2.2 䠅䜘䜚䠈 6.74 keV < E0 <12.27 keV 䛸ồ䜎䜛䠊➨ 3 ❶䛷ヲ⣽䜢グ䛩䛜䠈䝏䝱䝛䝹䜹䝑䝖ෆቨ㠃䛾኱Ẽᅽ䝥䝷䝈䝬ฎ⌮᫬䛾ᢏ⾡ⓗไ⣙➼䛻䜘䜚䠈ᐇ㝿䛿

6.5 keV < E0 < 11.5 keV䛸䛺䛳䛯䠊䛣䛾Ἴ㛗⠊ᅖ䛿 SACLA 䛾୺せ䛺䜶䝛䝹䜼䞊⠊ᅖ䜢䜹䝞䞊䛧䛶䛔䜛䠊᭦䛻䠈ྠ䛨⤖ᬗ䜢⏝䛔䛶㧗ḟ䛾ᅇᢡ㠃䛷䛒䜛 Si(440) 䜢฼⏝䛩䜛䛣䛸䛷䠈13 keV < E0 < 23 keV 䜢䜹䝞䞊䛷䛝䠈SACLA 䛾≉ᚩ䛾୍䛴䛷䛒䜛▷Ἴ㛗㡿ᇦ䛻䛚䛔䛶䜒ᮏගᏛ⣔䛿᭷ຠ䛷䛒䜛䠊➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

16

2.3 㐜ᘏ᫬㛫⠊ᅖ䛸ศゎ⬟㻌⚄ὠ⢭ᶵ〇䛾⮬ື䝇䝔䞊䝆䜢⏝䛔䠈ศ๭䞉㐜ᘏගᏛ⣔䜢⤌䜏ୖ䛢䛯䠊෗┿䛸ᴫ␎ᅗ䜢 Fig. 2.3
䛻♧䛩䠊඲䝁䞁䝫䞊䝛䞁䝖䛿Ᏻᐃ䛺▼ᐃ┙䛾ୖ䛻㓄⨨䛥䜜䛶䛔䜛䠊ᴟⷧ⤖ᬗ䠄BS䞉BM䠅䛸䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䠄CC1䞉CC2䠅䛾 X ⥺ධᑕゅ䠄ω䠅䜢㧗⪏Ⲵ㔜䛾 xz ┤㐍䝇䝔䞊䝆䠄KHI-4SK䠅䛻ᅛᐃ䛥䜜䛯㧗ศゎ⬟ ω-2θ 䝂䝙䜸䝯䞊䝍䠄KTG-22䠅䛻䜘䛳䛶ㄪᩚ䛩䜛䠊BR ⤖ᬗ䛾 ω ㄪᩚ⏝ᅇ㌿䝇䝔䞊䝆䠄RA04AW䠅䛿䠈ᴟⷧ⤖ᬗ⏝䝂䝙䜸䝯䞊䝍䛾 2θ 㠃䛻᥋⥆䛧䛶䛔䜛┤㐍䝇䝔䞊䝆䠄XA07A-L2䠅䛻ᅛᐃ䛧䛯䠊ᴟⷧ⤖ᬗ୪䜃䛻 BR ⤖ᬗ䛾 χ 䛿䠈ྛ ω 䝇䝔䞊䝆䛾ୖ䛻ᅛᐃ䛥䜜䛯䝇䜲䝧䝹䝇䝔䞊䝆䠄SA05B-RB䠈
SA04A-RT䠅䛻䜘䜚ㄪᩚ䛩䜛䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾 χ 䛿Ỉᖹ᪉ྥ䛻䜟䛪䛛䛺䝡䞊䝮఩⨨䛾ኚື䠄<
0.1 mm䠅䛧䛛䜒䛯䜙䛥䛺䛔Ⅽ䠈ᡭື䛷ㄪᩚ䛧䛯䠊ྛ䝇䝔䞊䝆䛾ศゎ⬟䜢 Table 2.3 䛻♧䛩䠊⏕ᡂྍ⬟䛺㐜ᘏ᫬㛫⠊ᅖ䛻┤⤖䛩䜛䝟䝷䝯䞊䝍䛿䠈2θ ㍈䛻ἢ䛳䛯┤㐍䝇䝔䞊䝆䛾⛣ື⠊ᅖ䛷䛒䜛䠊௒ᅇ౑⏝䛧䛯┤㐍䝇䝔䞊䝆䛾✌ື⠊ᅖ䛿 70 mm 䛷䛒䜚䠈6.5–11.5 keV 䛾⠊ᅖ䛷㐜ᘏ᫬㛫 0 䜢⏕ᡂ䛩䜛Ⅽ䠈57 mm < D < 127 mm 䛸䛺䜛䜘䛖㓄⨨䛧䛯䠊ศ๭䝡䞊䝮䛜⌮᝿ⓗ䛺ග㊰䜢䛸䜛ሙྜ䠈lower䝡䞊䝮䛻ᑐ䛩䜛 upper 䝡䞊䝮䛾㐜ᘏ᫬㛫䛿௨ୗ䛾䜘䛖䛻⾲䛥䜜䜛䠊τ = tup − tlo
=

(

)

(

2 D 1 − cos 2θ Bup − 2 Dlo 1 − cos 2θ Blo
c

)

(2.4)

䛣䛣䛷䠈tup䠈tlo 䛿 upper 䝡䞊䝮䠈lower 䝡䞊䝮䛾฿㐩᫬㛫䠈Dlo 䛿 CC1䞉CC2 䛻䛚䛡䜛཯ᑕⅬ㛫䛾㊥㞳䠈θ Bup 䠈 θ Blo 䛿 upper 䝟䝇䠈lower 䝟䝇䛾 Bragg ゅ䜢♧䛧䛶䛔䜛䠊䛺䛚䠈Dlo 䛿䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾䜼䝱䝑䝥ᖜ G = 30 mm 䜢⏝䛔䛶䠈 0.03 sin θ Blo [m] 䛸䛺䜛䠊ᘧ䠄2.4䠅䛾㏻䜚䠈D 䛾⠊ᅖ䛜ᅛᐃ䛥䜜䛶䛔䜛Ⅽ䠈㐜ᘏ᫬㛫⠊ᅖ䛿୧ศ๭䝡䞊䝮䛾Ἴ㛗䛻౫Ꮡ䛩䜛䠊᭱኱䠈᭱ᑠ㐜ᘏ᫬㛫䛾Ἴ㛗౫Ꮡᛶ䜢 Fig. 2.5a 䛻♧䛩䠊‽༢Ⰽ䛾 XFEL 䛻ᑐ䛧䛶౑⏝䛩䜛ሙྜ䠄 θ Bup ≈ θ Blo 䠅䠈㐜ᘏ᫬㛫⠊ᅖ䛿඾ᆺⓗ䛻 45 ps 䛻㐩䛩䜛䠊౛䜢ᣲ䛢䜛䛸䠈10 keV 䛻䛚䛡䜛㐜ᘏ᫬㛫⠊ᅖ䛿−50 䛛䜙+47 ps 䛸䛺䜛䠊ຍ㏿ჾ䝧䞊䝇䛾 2 ⰍⓎ᣺฼⏝᫬䛿䠈㐜ᘏ᫬㛫 0 䛾⏕ᡂ䛜୙ྍ⬟䛸䛺䜛ሙྜ䛜䛒䜛䛣䛸䛻ὀព䛧䛯䛔䠊౛䛘䜀䠈upper 䝡䞊䝮䠈
lower 䝡䞊䝮䛭䜜䛮䜜䛾 X ⥺䜶䝛䝹䜼䞊䜢 7 keV䠈9 keV 䛸タᐃ䛧䛯ሙྜ䠈㐜ᘏ᫬㛫 0 䛿⏕ᡂ䛥䜜䛺䛔䠊㐜ᘏ᫬㛫䛾ኚ໬ ∆τ 䛿䠈ᘧ䠄2.1䠅䜢⏝䛔䛶௨ୗ䛾䜘䛖䛻⾲䛥䜜䜛䠊

∆τ =

(

2∆D 1 − cos 2θ Bup
c

)

(2.5)

2.3㻌 㐜ᘏ᫬㛫⠊ᅖ䛸ศゎ⬟

Fig. 2.3.

17

Mechanics of the split-and-delay optics. (a) Picture and (b) schematic view ofthe mechanics for BS and BR1. BIMs represent beam intensity monitors.

Table 2.3.

Resolutions of stages operated in half-step feed mode.

Axis

Stage

Resolutionx, z

KHI-4SK1.0 µmD

XA07A-L2

0.25 µmωBS䠈ωBM䠈ωCCs

KTG-220.024 µrad

ωBRs

RA04A-W (w/ harmonic gear)

0.70 µrad (0.0004°)

χBS䠈χBM

SA05B-RB

8.4 µradχBRs

SA04A-RT

23 µrad2θ1䠈2θ2

KTG-2235 µrad (0.002°)

➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

18

Fig. 2.4.

Delay-time ranges and resolutions as a function of photon energies in the split

branches. (a) Maximum (left) and minimum (right) delay times with a linear translation
range of 57 mm < D < 127 mm. (b) Delay-time resolution with the minimum translational
deviation ∆D = 0.25 µm.

䛣䛣䛷䠈∆D 䛿 BR ⤖ᬗ䛾⛣ື㔞䛷䛒䜛䠊Table 2.3 䛛䜙᭱ᑠ䛾 ∆D 䛿 0.25 µm 䛷䛒䜛Ⅽ䠈㐜ᘏ᫬㛫䝇䝔䝑䝥䛿 6.5–11.5 keV 䛾⠊ᅖ䛻䛚䛔䛶 1 fs ௨ୗ䛸䛺䜛䠄Fig. 2.4b䠅䠊䛯䛰䛧䠈ศ๭䞉㐜ᘏගᏛ⣔䛻䜘䜚ᚓ䜙䜜䜛ᐇຠⓗ䛺᫬㛫ศゎ⬟䛿䠈ศ๭䝡䞊䝮䛾䝟䝹䝇᫬㛫ᖜ䛸䛺䜛䠊 Table 2.2 䛻♧䛩䜘䛖䛻䠈Si(220) ᅇᢡ䛻䜘䛳䛶 10 keV 䛻䛚䛔䛶⣙ 3 fs 䛾䝟䝹䝇ᖜ䛾ᣑ኱䛜ぢ㎸䜎䜜䜛䠊ᚑ䛳䛶䠈ᐇ㉁䛾᫬㛫ศゎ⬟䛿⣙ 10 fs 䛻䛺䜛䛸ぢ✚䜒䜙䜜䜛䠊

2.4 ᴟⷧ⤖ᬗ䛾せồ䝟䝷䝯䞊䝍㻌ᮏ⠇䛻䛚䛔䛶䠈ᴟⷧ⤖ᬗ䛻せồ䛥䜜䜛ྛ✀䝟䝷䝯䞊䝍䜢᳨ウ䛩䜛䠊᭱䜒㔜せ䛺䝟䝷䝯䞊䝍䛿ཌ䜏䛷䛒䜛䠊ືຊᏛ⌮ㄽ䛻ᇶ䛵䛝䝡䞊䝮ศ๭䛻ồ䜑䜙䜜䜛ཌ䜏䛸チᐜᖜ䜢ぢ✚䜒䜛䠊䜎䛯䠈㏱㐣ග䛻ᑐ䛩䜛ᙳ㡪䛸䛧䛶䠈ཌ䜏䝮䝷䛻䜘䜛఩┦ኚ໬䛜ᠱᛕ䛥䜜䜛䠊఩┦ᕪ䛜༑ศ↓どྍ⬟䛺ཌ䜏䝮䝷䜢✵㛫࿘Ἴᩘ䛸ྵ䜑㆟ㄽ䛩䜛䠊

2.4.1 ⤖ᬗཌ䜏䛾᳨ウ㻌ྛᅇᢡ㠃䛻䛚䛡䜛཯ᑕ䠈ᒅᢡᙉᗘ䠈㏱㐣⋡䛾⤖ᬗཌ䜏౫Ꮡᛶ䜢ㄪᰝ䛧䛯䠊 10 keV 䛻䛚䛡䜛Si(220) ᅇᢡ䛾⤖ᬗཌ䜏౫Ꮡᛶ䜢 Fig. 2.5 䛻♧䛩䠊᏶඲༢Ⰽᖹ⾜ග䜢 1:1 䛻ศ๭䠄༢Ⰽศ๭䠅ྍ⬟䛺⤖ᬗཌ䜏䜢 tsplit 䛸ᐃ⩏䛩䜛䠊䜎䛯䠈ㄗᕪ±10%䜢チᐜྍ⬟䛸䛩䜛䛸䠈Si(220) ᅇᢡ฼⏝᫬䛿 X ⥺䛾

2.4㻌 ᴟⷧ⤖ᬗ䛾せồ䝟䝷䝯䞊䝍

Fig. 2.5.

19

Thickness dependence of Si(220) diffraction at 10 keV. Red and blue show

reflection and refraction intensities at the exact Bragg angle, respectively. Green presents
transmissivity for a Si plate with a thickness of t/sinθB. Inset shows Si(220) Darwin curves
at a thickness of 6.8 µm.

Ἴ㛗䛻౫䜙䛪 1.91 ± 0.16 µm 䛾ཌ䜏䛜ồ䜑䜙䜜䜛䠊ᵝ䚻䛺⤖ᬗ㠃䛻ᑐ䛧䛶ồ䜑䜙䜜䜛 tsplit 䛸䛭䛾チᐜ್䠈䛭䛧䛶 Si(111) 䛾䝞䞁䝗ᖜ䜢᭷䛩䜛ᖹ⾜ධᑕග䛻ᑐ䛩䜛䝇䝹䞊䝥䝑䝖䜢 Table 2.4 䛻♧䛩䠊Si(220) 䛾ሙྜ䠈୧㐜ᘏ䝟䝇ྜ䜟䛫䛶⣙ 17%䛾䝇䝹䞊䝥䝑䝖䛸䛺䜛䠊ᮏᡭἲ䛷䛿䠈䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛻ᴟ䜑䛶ⷧ䛔ཌ䜏䛛䛴㧗䛔ཌ䜏ᆒ୍ᛶ䛜せồ䛥䜜䜛䠊䛣䛣䛷䠈䜘䜚኱䛝䛺䝇䝹䞊䝥䝑䝖䜢ᚓ䜛ᡭἲ䛸䛧䛶 2 Ⰽศ๭䜢⤂௓䛩䜛䠊ᮏᡭἲ䛿䝡䞊䝮䝅䜵䜰䝸䞁䜾 [44] ➼䜢┠ⓗ䛸䛧䛶᳨ウ䛥䜜䛶䛔䛯ᡭἲ䛷䛒䜛䛜䠈ᡃ䚻䛾䜾䝹䞊䝥䜔 Stetsko 䜙䛻䜘䛳䛶ศ๭䞉㐜ᘏගᏛ⣔䜈䛾᭷ຠᛶ䛜᳨ウ䛥䜜䛯 [39]䠊2 Ⰽศ๭䛻䛚䛔䛶䠈䝇䝨䜽䝖䝹䛻㔜」䜢ᣢ䛯䛺䛔 2 䛴䛾ศ๭䝟䝹䝇䛜⏕ᡂ䛥䜜䠈༢Ⰽศ๭䛸ẚ䜉኱䛝䛺䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䜛䠊㔜せ䛺Ⅼ䛿䠈䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛻䜘䛳䛶䠈ᅇᢡ䝞䞁䝗ᖜෆ䛻䛚䛔䛶༑ศ䛺཯ᑕ䜢ᚓ䜛஦䠈䛭䛧䛶ᅇᢡ䝞䞁䝗ᖜእ䛻䛚䛔䛶༑ศ䛺㏱㐣䜢ᚓ䜛஦䛷䛒䜛䠊ᚑ䛳䛶チᐜ䛥䜜䜛ཌ䜏䛿༢Ⰽศ๭䛸ẚ䜉ཌ䛟䛺䜚䠈ཌ䜏䝮䝷䛻ᑐ䛧䛶䜒ศ๭䝡䞊䝮ᙉᗘ䛿㕌ឤ䛸䛺䜛䠊䛣䛣䛷䠈ᴟⷧ⤖ᬗ䛾཯ᑕ⋡䛜ཌ䛔⤖ᬗ䛾཯ᑕ⋡䛾 80%௨ୖ䠈10 keV 䛻䛚䛔䛶䝞䞁䝗ᖜእ䛾ග䛻ᑐ䛩䜛㏱㐣⋡ Tout䠄Fig. 2.5 ⥳䠅䛜 75%௨ୖ䛸䛔䛖᮲௳䜢タ䛡䜛䠊㏱㐣⋡ Tout䛿௨ୗ䛾䜘䛖䛻⪃䛘䜛䠊➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

20
Table 2.4.

Required crystal thickness for various orders of diffraction at 10 keV.

Throughputs were calculated for an X-ray incidence with a Si(111) bandwidth by applying
single-color splitting (SCS) and dual-color splitting (DCS) methods. Values in parentheses
present throughputs of the upper branch.
hkl

tsplit [ µm ]tDCS [ µm ]Throughput w/ SCS

Throughput w/ DCS

111

1.35 ± 0.11

2.2–7.6

35.0% (17.5%)-

220

1.92 ± 0.16

3.1–12.4

16.7% (8.36%)

52% (30%) @6.5 µm

311

3.41 ± 0.28

5.5–14.6

6.93% (3.47%)

22% (12%) @10.4 µm

4003.21 ± 0.27

5.2–17.6

6.74% (3.37%)

22% (12%) @10.4 µm

331

5.21 ± 0.44

8.4–19.1

3.25% (1.62%)

10% (5.7%) @15.0 µm

4224.50 ± 0.38

7.3–21.5

3.77% (1.88%)

12% (6.6%) @13.4 µm

511/333

7.08 ± 0.61

11.4–22.8

1.88% (0.942%)

5.7% (3.3%) @18.9 µm

4405.90 ± 0.51

9.5–24.8

2.38% (1.19%)

7.5% (4.2%) @17.1µm

 t sin θ Bup Tout = exp −

µ



(2.6)

䛣䛣䛷 µ 䛿䝅䝸䝁䞁䛾྾཰ಀᩘ䛷䛒䜚䠈µ = 133.7 µm [53] 䜢⏝䛔䛯䠊チᐜ䛥䜜䜛ཌ䜏⠊ᅖ䠈䛭䛧䛶ᮇᚅ䛥䜜䜛䝇䝹䞊䝥䝑䝖䜢 Table 2.4 䛻♧䛩䠊䝇䝹䞊䝥䝑䝖䜢ィ⟬䛩䜛㝿䠈ྛศ๭䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼
䞊䛿 10000 ± 0.35 eV 䛻ᅛᐃ䛧䛯䠊Si(220) ᅇᢡ䛻䛚䛔䛶䠈3.1–12.4 µm 䛾ཌ䜏䛜チᐜ䛥䜜䠈6.5 µm
䛾⤖ᬗ䜢⏝䛔䛯㝿 50%䜢㉺䛘䜛䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䛯䠊䛣䜜䛿 Si(422) 䜔(511) 䜢⏝䛔䜛 Roseker䜙䛾ศ๭䞉㐜ᘏගᏛ⣔䛸ẚ䜉 4 䛛䜙 9 ಸ㧗䛔್䛸䛺䜛䠊䛯䛰䛧䠈lower 䝡䞊䝮䛾ᙉᗘ䛿⤖ᬗ䛾ཌ䜏䜔X ⥺䛾䜶䝛䝹䜼䞊䛻኱䛝䛟౫Ꮡ䛩䜛䠊≉䛻䜶䝛䝹䜼䞊䛜ప䛔ሙྜ䠈྾཰䛾ᙳ㡪䜢኱䛝䛟ཷ䛡䜛䠊

2.4.2 チᐜཌ䜏䝮䝷䛾᳨ウ㻌ཌ䜏ศᕸ䛻䜘䜛㏱㐣ග䛾఩┦ኚ໬䜢᳨ウ䛩䜛䠊ィ⟬䝰䝕䝹䜢 Fig. 2.6a 䛻♧䛩䠊X ⥺䛻ᑐ䛩䜛≀㉁䛾⥺ᙧᒅᢡ⋡ n 䜢 n = 1 − δ − i β 䛸⨨䛟䠊ཌ䜏䛾␗䛺䜛 2 Ⅼ䜢㏻㐣䛧䛯 X ⥺䛾఩┦ᕪ α 䛿

α = −2πδδt
λ sin θ B

(2.6)

2.4㻌 ᴟⷧ⤖ᬗ䛾せồ䝟䝷䝯䞊䝍

Fig. 2.6.

21

Estimation of phase errors due to thickness variations.
(a) Calculation model and (b) results at 10 keV.

䛸⾲䛥䜜䜛䠊䛣䛣䛷䠈δt 䛿 2 Ⅼ㛫䛾ཌ䜏ᕪ䛷䛒䜛䠊10 keV 䛻䛚䛡䜛఩┦ኚ໬䛾ཌ䜏䝮䝷౫Ꮡᛶ䜢 Fig.
2.6b 䛻♧䛩䠊䛺䛚䠈௚䛾Ἴ㛗䛻䛚䛔䛶䜒䜋䜌ྠᵝ䛾⤖ᯝ䜢♧䛩䠊チᐜ఩┦ኚ໬䜢 π/5䠄= λ/10䠅䛸䛩䜛䛸䠈チᐜ䛥䜜䜛ཌ䜏䝮䝷䛿⣙ 820 nm 䛸ぢ✚䜒䜙䜜䜛䠊䛯䛰䛧䠈✵㛫Ἴ㛗䛸䛧䛶䛿 XFEL 䛾↷ᑕ㡿ᇦ䜘䜚䜒༑ศᑠ䛥䛔䠈䜒䛧䛟䛿༑ศ኱䛝䛔ᚲせ䛜䛒䜛䠊 SACLA 䛻䛚䛡䜛䝡䞊䝮䝃䜲䝈䛜⣙ 200 µm
FWHM 䛷䛒䜛䛣䛸䛛䜙 6.5 keV 䛻䛚䛡䜛↷ᑕ㡿ᇦ䛿ග㍈᪉ྥ䛻⣙ 400 µm 䛸䛺䜛䠊ᚑ䛳䛶䠈0.4–1.6
mm 䛾✵㛫Ἴ㛗䠄✵㛫࿘Ἴᩘ 0.6–2.5 mm−1䠅ᡂศ䛾ཌ䜏䝮䝷䜢ྲྀ䜚㝖䛟ᚲせ䛜䛒䜛䠊

2.5 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ぢ✚䜒䜚㻌ᮏ⠇䛻䛚䛔䛶䠈Si(220) ⤖ᬗ䜢⏝䛔䛯ศ๭䞉㐜ᘏගᏛ⣔䛻䜘䜚ᚓ䜙䜜䜛䝇䝹䞊䝥䝑䝖䜔䝟䝹䝇᫬㛫ᖜ䛾ᩘ್ゎᯒⓗ䛺ぢ✚䜒䜚䜢⾜䛖䠊䜎䛪䛿ᨺᑕග᪋タ䜔 XFEL ᪋タ䛻䛚䛔䛶䜒୍⯡ⓗ䛻⏝䛔䜙䜜䜛 Si(111) 䝰䝜䜽䝻䝯䞊䝍฼⏝᫬䛾䝇䝹䞊䝥䝑䝖䜢䠈DuMond ᅗ [54] 䛻ᇶ䛵䛝ィ⟬䛩䜛䠊2 Ⰽศ๭䜢⾜䛖㝿䠈䛭䜜䛮䜜䛾ศ๭䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊䛾䝈䝺㔞䛻ᑐ䛩䜛ᙳ㡪䜒ㄪᰝ䛩䜛䠊䛭䛧䛶䝷䞁䝎䝮䛺᫬㛫䠈࿘Ἴᩘᵓ㐀䜢᭷䛩䜛 SASE 䝟䝹䝇䛻ᑐ䛧䛶ศ๭䞉㐜ᘏගᏛ⣔䜢⏝䛔䛯ሙྜ䛻㛵䛧䛶䜒䠈䝣䞊䝸䜶ゎᯒ䛻ᇶ䛵䛝ぢ✚䜒䜛䠊䛺䛚䠈ᴟⷧ⤖ᬗ䛾ཌ䜏䛿඲䛶䛾ィ⟬䛻ᑐ䛧䛶 10 µm 䛸䛧䛯䠊

2.5.1 Si(111)㻌 䝰䝜䜽䝻䝯䞊䝍䛻ᑐ䛩䜛᳨ウ㻌᭱㐺䛺୰ᚰ䜶䝛䝹䜼䞊䛾䝈䝺㔞䜢ồ䜑䜛Ⅽ䠈ᖹ⾜ග䛻䛚䛡䜛䝇䝹䞊䝥䝑䝖䜢ィ⟬䛧䛯䠊X ⥺䛾䜶䝛䝹䜼䞊䛿 10 keV 䛸䛧䠈Si(111) 2 ⤖ᬗศගჾ䠄double-crystal monochromator䠈DCM䠅䛻䜘䜚༢Ⰽ໬

22➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ䛥䜜䛯ධᑕ X ⥺䛻ᑐ䛧䛶䠈upper䠈lower 䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊䜢䛭䜜䛮䜜ኚ໬䛥䛫䛺䛜䜙䝇䝹䞊䝥䝑䝖䜢ồ䜑䛯䠊ィ⟬⤖ᯝ䜢 Fig. 2.7 䛻♧䛩䠊Upper 䝟䝇䛿 lower 䝟䝇䛛䜙⊂❧䛧䛶䛔䜛Ⅽ䠈lower 䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊Elo 䛻䛿ᙳ㡪䜢ཷ䛡䛺䛔䛜䠈ධᑕග䝇䝨䜽䝖䝹䛾㠀ᑐ⛠ᛶ䛻㉳ᅉ䛧䛯 upper 䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊Eup ౫Ꮡᛶ䜢♧䛧䛶䛔䜛䠄Fig. 2.7a䠅䠊䜎䛯䠈ཌ䜏 10 µm 䛾⤖ᬗ䛷䛿ᅇᢡ䝞䞁䝗ᖜෆ䛾 X ⥺䛿䜋䛸䜣䛹཯ᑕ䛥䜜䜛Ⅽ䠈༢Ⰽศ๭᮲௳䛸䛺䜛 Eup ≈ Elo 䛾㡿ᇦ䛻䛚䛔䛶᭱䜒 lower 䝟䝇䛾䝇䝹䞊䝥䝑䝖䛜ᑠ䛥䛟䛺䛳䛶䛔䜛䠄Fig. 2.7b䠅䠊䛣䛣䛷䠈upper 䝡䞊䝮䛾䝇䝨䜽䝖䝹⠊ᅖ䛜 Si(111) 䝞䞁䝗ᖜෆ䛾㧗䜶䝛䝹䜼䞊ഃ䠈ప䜶䝛䝹䜼䞊ഃ䛾䛹䛱䜙䛻఩⨨䛧䛶䛔䜛䛛䛻䜘䛳䛶 lower 䝟䝇䛾䝇䝹䞊䝥䝑䝖䛜኱䛝䛟ᙳ㡪䜢ཷ䛡䛶䛔䜛䛣䛸䛜ぢ䛶ྲྀ䜜䜛䠊䛣䜜䛿ධᑕග䝇䝨䜽䝖䝹䛾㠀ᑐ⛠ᛶ䛾ᙳ㡪䛾䜏䛺䜙䛪䠈␗ᖖ྾཰ຠᯝ䠄Borrmann ຠᯝ [55]䠅䛻䜒㉳ᅉ䛧䛶䛔䜛䠊䛭䜒䛭䜒 Darwin 䜹䞊䝤䛾㠀ᑐ⛠ᛶ䛾せᅉ䛷䜒䛒䜛䛜䠈Bragg ᮲௳㏆ഐ䛻䛚䛔䛶྾཰ಀᩘ䛜ኚ໬䛩䜛⌧㇟䛷䛒䜚䠈Fig. 2.5 䛾䜘䛖䛻ప䜶䝛䝹䜼䞊ഃ䛾㏱㐣⋡䛜ୖ䛜䜛䠊ᚑ䛳䛶䠈ྠ䛨㔞䛰䛡୰ᚰ䜶䝛䝹䜼䞊䜢䛪䜙䛧䛯ሙྜ䛻䛚䛔䛶䜒䠈upper䝡䞊䝮䜢㧗䜶䝛䝹䜼䞊ഃ䠈lower 䝡䞊䝮䜢ప䜶䝛䝹䜼䞊ഃ䛸タᐃ䛧䛯᪉䛜䝖䞊䝍䝹䛾䝇䝹䞊䝥䝑䝖䛿ྥୖ䛩䜛䠄Fig. 2.7c䠅䠊䛣䛾⤖ᯝ䜢ᇶ䛻䠈Si(111) DCM ฼⏝᫬䛿䠈upper 䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊䜢(1 + 3.5 × 10−5)E0䠈lower 䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊䜢 (1 − 3.5 × 10−5)E0 䛸タᐃ䛧䛯䠊䛣䜜䜎䛷䛾㆟ㄽ䛿ᖹ⾜ග䛻ᑐ䛧䛶⾜䛳䛶䛝䛯䠊ᐇ㝿䛿ධᑕ X ⥺䛾Ⓨᩓゅ䛻䜘䛳䛶䝇䝹䞊䝥䝑䝖䛿ᙳ㡪䜢ཷ䛡䜛䠊䛣䛣䛷䛿ᖹ⾜ග䛜䛒䜛▴ᙧ㛤ཱྀ䜢᭷䛩䜛䝇䝸䝑䝖䜢㏻㐣䛧䠈䛭䛾䝃䜲䝈䛻ᛂ䛨䛯ᅇᢡ㝈⏺Ⓨᩓゅ䜢᭷䛧䛯ධᑕග䜢᝿ᐃ䛩䜛䠊㛤ཱྀ 30 µm 䛾㝿䛾ධᑕග䠈upper䠈lower 䝡䞊䝮䛾 DuMondᅗ䛺䜙䜃䛻䝇䝨䜽䝖䝹䜢 Fig. 2.8 䛻♧䛩䠊䛣䛾᫬䠈ධᑕග䛾Ⓨᩓゅ䛿 1.83 µrad FWHM 䛸䛺䜚䠈
SACLA 䛸ྠ➼䛾್䛸䛺䜛䠄䛯䛰䛧䠈▴ᙧ㛤ཱྀ䛾Ⅽ sinc 㛵ᩘⓗ䛺ゅᗘ䝥䝻䝣䜯䜲䝹䛸䛺䜛䠅䠊䛣䛾᫬䛾䝇䝹䞊䝥䝑䝖䛿 upper䠈lower 䝤䝷䞁䝏䛭䜜䛮䜜 28.8%䠈19.4%䛸䛺䜚䠈ᖹ⾜ධᑕග䛻ᑐ䛩䜛䝇䝹䞊䝥䝑
䝖䠄30.5%䠈20.6%䠅䜘䜚䜒ᑠ䛥䛟䛺䛳䛯䠊䝇䝹䞊䝥䝑䝖䛾Ⓨᩓゅ౫Ꮡᛶ䜢 Fig. 2.9 䛻♧䛩䠊Ⓨᩓゅ䛾ቑ኱䛸ඹ䛻䝇䝹䞊䝥䝑䝖䛿పୗ䛩䜛䛜䠈➨ 3 ୡ௦ᨺᑕග䜔 XFEL 䛾Ⓨᩓゅ䛿 10 keV 䛻䛚䛔䛶୍⯡ⓗ䛻
4 µrad FWHM ௨ୗ䛷䛒䜛䛯䜑䠈኱䛝䛺ၥ㢟䛸䛿䛺䜙䛺䛔䛸⪃䛘䜙䜜䜛䠊

2.5㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ぢ✚䜒䜚Fig. 2.7.

Throughputs for plane-wave 10 keV X-rays from a Si(111) DCM as a functionof energy deviations of the split branches. Throughputs of the upper branch (a), the lower
branch (b), and sum of them (c).

23➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

24

Fig. 2.8.

Calculation of throughputs taking into account a beam divergence. DuMonddiagrams of an incident 10 keV X-ray beam from a 30 µm aperture (a), the upper beam (b),and the lower beam (c). (d) Calculated spectra. Black, red, and blue show the spectra of theincident beam, the upper beam, and the lower beam, respectively. Dashed lines represent
the spectra obtained for a plane beam.

Fig. 2.9.

Throughputs as a function of beam divergence at 10 keV.

2.5㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ぢ✚䜒䜚

25

2.5.2 SASE 䛻ᑐ䛩䜛᳨ウ㻌ᮏ㡯䛻䛚䛔䛶䠈⌧ᅾ XFEL 䛾Ⓨ᣺ཎ⌮䛸䛧䛶୍⯡ⓗ䛻⏝䛔䜙䜜䛶䛔䜛 SASE 䛻䛚䛡䜛ศ๭䞉㐜ᘏගᏛ⣔䛾䝇䝹䞊䝥䝑䝖䜔䝟䝹䝇᫬㛫ᖜ䛻㛵䛧䛶᳨ウ䛩䜛䠊SASE 䛿㟁Ꮚ㖠䛛䜙⏕䛨䛯ప䜶䝭䝑䝍䞁䝇䛺㟁Ꮚ䝞䞁䝏䜢⥺ᙧຍ㏿ჾ䛻䜘䛳䛶┦ᑐㄽⓗ䛺㏿ᗘ䜎䛷ຍ㏿䛥䛫䠈㛗ᑻ䛾䜰䞁䝆䝳䝺䞊䝍䛻㏻䛩
䛣䛸䛷䝺䞊䝄䞊Ⓨ᣺䜢ᐇ⌧䛩䜛ᡭἲ䛷䛒䜛䠊ཎ⌮ୖ㟁Ꮚ䝞䞁䝏䛾⤫ィㄽⓗ䛺䜶䝛䝹䜼䞊ศᕸ䛾ᙳ㡪䜢኱䛝䛟ཷ䛡䜛䛯䜑䠈᫬㛫䠈䝇䝨䜽䝖䝹䝥䝻䝣䜯䜲䝹䛿䝅䝵䝑䝖ẖ䛻኱䛝䛟ኚື䛧䠈ከ䛟䛾䝇䝟䜲䜽ᵓ㐀䜢♧䛩䠊ᚑ䛳䛶✵㛫䝁䝠䞊䝺䞁䝇㛗䛿䝡䞊䝮䝃䜲䝈䛸ྠ⛬ᗘ䛸䛺䜛䛜 [31, 52, 56–58]䠈᫬㛫䝁䝠䞊䝺䞁䝇㛗䛿䝟䝹䝇᫬㛫ᖜ䛸ẚ䜉ᴟ䜑䛶ᑠ䛥䛔 [29]䠊䜎䛪䠈䛣䛾䜘䛖䛺䝅䝵䝑䝖ẖ䛻䝷䞁䝎䝮䛺ᵓ㐀䜢♧䛩
SASE 䝟䝹䝇䜢ᩘ್ゎᯒⓗ䛻෌⌧䛧䛯䠊
SASE 䝟䝹䝇䛾㟁ሙ Ein(t) 䜢௨ୗ䛾䜘䛖䛻⨨䛟䠊E in (t ) = (t − t i )2  t2 
 exp[− i (ω 0 + ω i )t ]Ai exp − 2  exp −
σ 2 
i =1
 δτ 

N

∑

(2.8)

䛣䛣䛷䠈N 䛿ධຊ䝇䝟䜲䜽ᩘ䠈Ai䠈ti䠈ωi 䛿䛭䜜䛮䜜䝇䝟䜲䜽 i 䛾᣺ᖜ䠈୰ᚰ᫬㛫䠈ω0 䛛䜙䛾࿘Ἴᩘ䛾䝈䝺䠈δτ 䛿 SASE 䝟䝹䝇䛾᫬㛫ᖜ䠈σ 䛿ྛ䝇䝟䜲䜽䛾᫬㛫ᖜ䛷䛒䜛䠊䛣䛣䛷䛿 ωi 䜢䝷䞁䝎䝮䛻ྲྀ䛳䛯䛜䠈䝏䝱䞊䝥䝟䝹䝇䜢᝿ᐃ䛩䜛ሙྜ䛿᫬㛫䛾ኚᩘ䛸䛩䜜䜀䜘䛔䠊䛣䛾᫬䠈σ 䛿䝁䝠䞊䝺䞁䝇᫬㛫䛻┦
ᙜ䛧䠈Refs. [32, 52] ➼䜢ཧ⪃䛻 10 keV 䛻䛚䛔䛶 0.1 fs FWHM 䛸䛧䠈䜶䝛䝹䜼䞊䛻ᑐ䛧䛶཯ẚ౛䛸䛧䛯䠊䜎䛯䠈δτ 䛿 5 fs FWHM 䛸䛧䛯䠊᫬㛫䛸࿘Ἴᩘ䛸䛿䝣䞊䝸䜶㛵ಀ䛻䛒䜛䛯䜑䠈ゅ࿘Ἴᩘศᕸ Ein(ω)
䛿

E in (ω ) =∞∫ E (t ) exp(−iωt )dt

(2.9)

in

−∞

䛸䛺䜛䠊ᚑ䛳䛶䠈䛭䜜䛮䜜䛾ᙉᗘ䛿 Iin(t) = |Ein(t)|2䠈Iin(ω) = |Ein(ω)|2 䛸䛺䜛䠊10 keV 䛻䛚䛔䛶෌⌧䛧䛯
SASE 䝟䝹䝇䜢 Fig. 2.10 䛻♧䛩䠊᫬㛫䠈䝇䝨䜽䝖䝹ᵓ㐀ඹ䛻䝷䞁䝎䝮䛺䝇䝟䜲䜽ᵓ㐀䛸䛺䛳䛶䛔䜛䛣䛸䛜䜟䛛䜛䠊䝇䝨䜽䝖䝹䛾䝇䝟䜲䜽ᖜ䛿 300–600 meV ⛬ᗘ䛸䛺䛳䛶䛚䜚䠈ᐇ್䛸Ⰻ䛟୍⮴䛩䜛 [51]䠊䜎

䛯䠈ωi 䛾⠊ᅖ䜢± 0.002ω0 䛸䛩䜛䛣䛸䛷⣙ 50 eV FWHM 䛾䝞䞁䝗ᖜ䜢෌⌧䛧䛯䠊⤖ᬗ䛻䜘䜛 Bragg ᅇᢡ䛾᫬㛫䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪䜢 Shastri 䜙䛜᥇⏝䛧䛯䝣䞊䝸䜶ゎᯒ䛻ᇶ䛵➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

26

Fig. 2.10.

Simulated SASE pulse. (a) Temporal profile and (b) spectrum.

Fig. 2.11.

Calculation of impulse response of Si(220) diffraction at 10 keV.

(a) |GR(t)|2 and (b) |GT(t)|2. Thickness of the thin crystal was 10 µm.

2.5㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ぢ✚䜒䜚27䛔䛶᳨ウ䛩䜛 [41, 59]䠊⤖ᬗᅇᢡ䛾」⣲᣺ᖜ཯ᑕ⋡䠈㏱㐣⋡䜢䛭䜜䛮䜜 R(ω)䠈T(ω) 䛸⨨䛟䠊䛭䛾䜲䞁䝟䝹䝇ᛂ⟅ GR(T)(t) 䛿௨ୗ䛾䜘䛖䛻᭩䛡䜛䠊

G R ( T ) (t ) =

䛣䛣䛷䠈

1

∞

π ∫0

R (T )(ω ) exp(iωt )dω(2.10)∞∫ δ (t ) exp(−iωt )dt = 1 / 2π 䜢⏝䛔䛯䠊δ(t) 䛿 Dirac 䛾䝕䝹䝍㛵ᩘ䛷䛒䜛䠊඾ᆺⓗ䛺|G(t)| 䜢
2−∞

Fig. 2.11 䛻♧䛩䠊䛣䛾|G(t)|2 䛜⤖ᬗᅇᢡ䛻䛚䛡䜛䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䜢ព࿡䛧䛶䛚䜚䠈ධᑕ XFEL䝟䝹䝇䛻ᑐ䛧䛶␚䜏㎸䜏✚ศ䜢⾜䛖䛣䛸䛷䠈཯ᑕ䝟䝹䝇䛾᫬㛫ᵓ㐀䛜௨ୗ䛾䜘䛖䛻ぢ✚䜒䜙䜜䜛䠊

2∞

I ref (t ) =∫ E (τ )G (t − τ )dτ = E (t ) ∗ G (t )
in

R

in

2

R

(2.11)−∞

ᚑ䛳䛶䝟䝹䝇᫬㛫ᖜ䛾ᣑ኱䛿|GR(t)|2 䛾್༙༙ᖜ䛛䜙ぢ✚䜒䜙䜜䠈10 keV 䛻䛚䛔䛶⣙ 3.7 fs 䛸䛺䜛䠊䛣䜜䛿ᘧ䠄1.2䠅䛾୙☜ᐃᛶཎ⌮䛛䜙ぢ✚䜒䜙䜜䛯್䛸ẚ㍑ⓗⰋ䛟୍⮴䛩䜛䠊」⤖ᬗ㓄⨨䛾ሙྜ䛿ᘧ
䠄2.10䠅䛻⤖ᬗ䛻䜘䜛཯ᑕ䠈㏱㐣䛾ᩘ䛰䛡 R(ω) 䛸 T(ω) 䜢᥃䛡䜜䜀䜘䛔䠊௨ୖ䛾ᘧ䜢⏝䛔䛶 SASE 䛻ᑐ䛩䜛ศ๭䞉㐜ᘏගᏛ⣔䛾䝇䝹䞊䝥䝑䝖䜢ぢ✚䜒䛳䛯䠊䛺䛚䠈ィ⟬㈇Ⲵ䜢పῶ䛥䛫䜛䛯䜑Ⓨᩓゅ䛿⪃៖䛧䛶䛔䛺䛔䠊⤫ィⓗ䛺ホ౯䜢⾜䛖Ⅽ䠈6.5–11.5 keV 䛾⠊ᅖ䛻䛚䛔
䛶 1000 䝅䝵䝑䝖䛪䛴ィ⟬䜢⾜䛳䛯䠊䛣䛣䛷䠈SASE 䛿 Si(220) ᅇᢡ䛻ᑐ䛧䛶༑ศᗈ䛔䝞䞁䝗ᖜ䜢᭷䛧䛶䛔䜛Ⅽ䠈upper䠈lower 䝡䞊䝮䛾୰ᚰ䜶䝛䝹䜼䞊䜢䛭䜜䛮䜜± 5 × 10−5 E0 䛰䛡䛪䜙䛧䛯䠊10 keV 䛻䛚䛡䜛ィ⟬⤖ᯝ䜢 Fig. 2.12 䛻♧䛩䠊1000 䝅䝵䝑䝖䛾ᖹᆒ䛻䜘䜚ධᑕ XFEL 䝟䝹䝇䛾᫬㛫䝥䝻䝣䜯䜲䝹䠈䝇䝨䜽䝖䝹䛿⁥䜙䛛䛺䜺䜴䝇㛵ᩘ䛸䛺䜛䠊ศ๭䝟䝹䝇䛾ᖹᆒ᫬㛫䝥䝻䝣䜯䜲䝹䜒ྠᵝ䛻䜺䜴䝇㛵ᩘ䛾䜘䛖䛻䛺䜚䠈᫬㛫ᖜ䛿⣙ 8 fs FWHM 䛷䛒䛳䛯䠊䛧䛛䛧䠈Si(220) ᅇᢡ䛾䝞䞁䝗ᖜ䛸䝇䝟䜲䜽ᖜ䛸䛜ྠ➼䛸
䛺䜛Ⅽ䠈䝅䝵䝑䝖ẖ䛻᫬㛫䝥䝻䝣䜯䜲䝹䛜኱䛝䛟ኚ໬䛧䠈୰䛻䛿䝬䝹䝏䝢䞊䜽䛸䛺䜛䝟䝹䝇䜒☜ㄆ䛥䜜䛯䠊䝇䝹䞊䝥䝑䝖䛿 upper䠈lower 䝟䝇䛭䜜䛮䜜 0.82 ± 0.69%䠈0.53 ± 0.43%䛸䛺䛳䛯䠊䝅䝵䝑䝖ẖ䛾䝇䝟䜲䜽఩⨨䛜䝷䞁䝎䝮䛻ኚ໬䛩䜛 SASE 䝟䝹䝇䛻ᑐ䛧䛶䛿㠀ᖖ䛻኱䛝䛺䝇䝹䞊䝥䝑䝖䛾䝞䝷䛴䛝䛜☜ㄆ䛥䜜䛯䠊᭦䛻䠈ᮏィ⟬䛻䛚䛔䛶ྛ䝇䝟䜲䜽㛫䛻┦㛵䛜↓䛔Ⅽ䠈upper 䝡䞊䝮䛸 lower 䝡䞊䝮䛸䛾㛫䛻䜒ᙉᗘ┦㛵䛿඲䛟ぢ䜙䜜䛺䛔䠄Fig. 2.12c䠅䠊䛣䜜䜙䛾≉ᛶ䛿ᐇ㦂䜢⾜䛖ୖ䛷኱䛝䛺ጉ䛢䛸ᡂ䜚ᚓ䜛䛜䠈䛭䜜䛮䜜䛾ᙉᗘ䜢䝅䝵䝑䝖ẖ䛻ᐃ䛧䠈䝕䞊䝍䛾ྲྀᤞ㑅ᢥ䜢⾜䛖䛣䛸䛷䠈⢭ᐦ䛺ᐇ㦂䝕䞊䝍䛾ゎ➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ

28

Fig. 2.12.

Calculation of throughputs for SASE pulses at 10 keV. Averaged temporalprofile (a) and spectra (b). (c) Correlation of throughputs between the upper and the lower
branches. (d) Histograms of throughputs with a sampling number of 1000.

2.5㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ぢ✚䜒䜚Fig. 2.13.

29

Throughputs for SASE pulses as a function of photon energy. Upward and downward

triangles represent averaged throughputs of the upper and the lower branches, respectively. Error
bars correspond to the standard deviation in 1000 events.

ᯒ䛜ྍ⬟䛰䛸⪃䛘䜙䜜䜛䠊
Fig. 2.13 䛻ྛ X ⥺䜶䝛䝹䜼䞊䛻䛚䛡䜛䝇䝹䞊䝥䝑䝖䜢♧䛩䠊6.5 keV 䛻䛚䛔䛶᭱䜒ప䛟䠈䛭䜜䛮䜜 0.60 ± 0.52%䠈0.26 ± 0.22%䛸䛺䛳䛯䠊ධᑕ䝟䝹䝇䜶䝛䝹䜼䞊䜢 300 µJ 䛸䛩䜛䛸䠈ྛศ๭䝟䝹䝇䛾ᙉᗘ䛿ᖹᆒ䛷 1.8 µJ/pulse䠈0.8 µJ/pulse 䛸䛺䜛䠊䛣䛾ᙉᗘ䛿 1 µm 㞟ගගᏛ⣔䜢⏝䛔䛯㝿䠈㔜ඖ⣲ᮦᩱ䛻䛚䛔䛶䜰䝤䝺䞊䝅䝵䞁䛜⏕䛨䜛ᙉᗘ䛷䛒䜚 [60]䠈䜰䝤䝺䞊䝅䝵䞁䜔⏕యヨᩱ䛾ᨺᑕ⥺ᦆയ㐣⛬䛾ᐃ䜈䛾㐺⏝䜒ᮇᚅฟ᮶䜛䠊

2.6 ⤖ゝ㻌ᮏ❶䛻䛚䛔䛶䠈㧗䛔Ᏻᐃᛶ䠈ㄪᩚ⮬⏤ᗘ䜢ᚓ䜛䛯䜑䠈⤖ᬗ⣲Ꮚ䛻䜘䜛 Bragg ᅇᢡ䛻ᇶ䛵䛔䛯Ἴ㛗ྍኚ◳ X ⥺ศ๭䞉㐜ᘏගᏛ⣔䜢ᥦ᱌䛧䠈ྛ✀䝟䝷䝯䞊䝍䛾タィ䜢⾜䛳䛯䠊䜎䛯䠈ືຊᏛ⌮ㄽ䛻ᇶ䛵䛝䠈ᴟⷧ⤖ᬗ䛻ᑐ䛩䜛せồ䜢ぢ✚䜒䛳䛯䠊䛭䛧䛶ண᝿䛥䜜䜛䝇䝹䞊䝥䝑䝖䜔ศ๭䝟䝹䝇䛾᫬㛫䝥䝻䝣䜯䜲䝹➼䜢䠈DuMond ᅗ䜔䝣䞊䝸䜶ゎᯒ䜢⏝䛔䛶ィ⟬䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) ග㊰㛗ྍኚ䝟䝇䛸ᅛᐃ䝟䝇䛸䛜⊂❧䛧䛯ගᏛ㓄⨨䛾᥇⏝䛻䜘䜚䠈㐜ᘏ᫬㛫ኚ᭦䛾㝿䛾ㄪᩚ㍈䛾๐ῶ䜔䠈ຍ㏿ჾ䝧䞊䝇䛾 2 Ⰽ XFEL 䛸䛾ඹ⏝䜢ྍ⬟䛸䛧䛯䠊➨ 2 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾タィ30(2) ග㊰㛗ᅛᐃ䝟䝇䛻 2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢ᑟධ䛩䜛䛣䛸䛷䠈ㄪᩚ㍈䛾๐ῶ䠈䜰䝷䜲䝯䞁䝖ᇶ‽䛸䛺䜛䝡䞊䝮䛾౪⤥䜢ྍ⬟䛸䛧䛯䠊(3) Bragg ᅇᢡ䝞䞁䝗ᖜ䛻䛚䛡䜛䝣䞊䝸䜶㝈⏺᫬㛫ᖜ䛜 XFEL ᅛ᭷䛾䝟䝹䝇᫬㛫ᖜ䛻ᑐ䛧༑ศᑠ䛥

䛟䠈1 m ⛬ᗘ䛾䝇䝨䞊䝇䛻䛚䛔䛶䜒ᩘⓒ䝢䝁⛊䛾㐜ᘏ䜢⏕ᡂྍ⬟䛸䛩䜛Ⅽ䠈Si(220) ᅇᢡ䜢᥇⏝䛧䛯䠊(4) SACLA 䛾୺せ䛺 X ⥺䜶䝛䝹䜼䞊⠊ᅖ䜢䜹䝞䞊䛧䛴䛴䠈㐜ᘏ᫬㛫䝊䝻䛾⏕ᡂ䜔䠈⾲㠃ィ䛜ྍ⬟䛺䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢タィ䛧䛯䠊Si(220) ᅇᢡ฼⏝᫬䛻チᐜ䛥䜜䜛 X ⥺䜶䝛䝹䜼䞊ᖜ䛿
6.5–11.5 keV 䛸䛺䛳䛯䠊(5) ไᚚ⣔䜢ᵓ⠏䛧䠈㐜ᘏ᫬㛫⠊ᅖ䠈᫬㛫䝇䝔䝑䝥䜢ぢ✚䜒䛳䛯䠊10 keV 䛻䛚䛔䛶䛭䜜䛮䜜䠈−50

䛛䜙+47 ps 䛸⣙ 0.3 fs 䛸䛺䛳䛯䠊(6) 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛻せồ䛥䜜䜛ཌ䜏䛸チᐜㄗᕪ䜢䠈X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ䛻ᇶ䛵䛝᳨ウ䛧䛯䠊㧗䛔䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䜛 2 Ⰽศ๭ᡭἲ䛾㐺⏝䛻䜘䜚䠈Si(220) ⤖ᬗ䛻䛚䛔䛶䠈3.2–12.4µm 䛾ཌ䜏䛜ồ䜑䜙䜜䠈チᐜㄗᕪ 820 nm 䛸ぢ✚䜒䜙䜜䛯䠊(7) DuMond ᅗ䛻ᇶ䛵䛝䠈ศ๭䞉㐜ᘏගᏛ⣔䛾䝇䝹䞊䝥䝑䝖䜢ィ⟬䛧䛯䠊Si(111) 䛾䝞䞁䝗ᖜ䜢᭷䛩䜛ධᑕග䛻ᑐ䛧䛶䠈10 keV 䛻䛚䛔䛶䝖䞊䝍䝹 50%䛸䛺䛳䛯䠊䜎䛯䠈Ⓨᩓゅ䛾ᙳ㡪䜒ㄪᰝ䛧䠈XFEL
䛾䜘䛖䛺ᖹ⾜ᛶ䛾㧗䛔ග※䛻ᑐ䛧䛶䛿䜋䛸䜣䛹↓ど䛷䛝䜛஦䜢♧䛧䛯䠊(8) 䝣䞊䝸䜶ゎᯒ䛻ᇶ䛵䛝䠈SASE ග※䛻ᑐ䛩䜛䝇䝹䞊䝥䝑䝖ศᕸ䜔䝟䝹䝇䛾᫬㛫ᣑ኱ᖜ䜢ィ⟬䛧䛯䠊ᖹᆒ䝇䝹䞊䝥䝑䝖䛿䝖䞊䝍䝹䛷 1.0–1.5%䛸ぢ✚䜒䜙䜜䠈䝟䝹䝇᫬㛫ᖜ䛜 3–4 fs ᣑ኱䛩䜛஦䜢ᑟ䛝ฟ䛧䛯䠊

➨3❶

୺せගᏛ⣲Ꮚ䛾స〇
3.1 ⥴ゝ㻌ᮏ❶䛻䛚䛔䛶䠈ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟䛻኱䛝䛟స⏝䛩䜛ගᏛ⣲Ꮚ䠈䝡䞊䝮䝇䝥䝸䝑䝍䛸䛧䛶䛾ⷧ䛔⤖ᬗ䛸䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾స〇䛻㛵䛧䛶ゎㄝ䛩䜛䠊➨ 1 ❶䛷㏙䜉䛯㏻䜚䠈‴᭤䜒ྵ䜑䛯㧗䛔⤖ᬗ᏶඲ᛶ䜢᭷䛩䜛ᴟⷧ⤖ᬗ䜔䠈⤖ᬗṍ䜏䜢᭷䛧䛺䛔䝏䝱䝛䜹䝑䝖⤖ᬗ䛿ᮍ䛰ሗ࿌䛥䜜䛶䛔䛺䛔䠊ᮏ◊✲䛷䛿䠈኱Ẽᅽ䝥䝷䝈䝬䜢⏝䛔䛯䜶䝑䝏䞁䜾ᢏ⾡䛷䛒䜛 PCVM䠄plasma chemical vaporization
machining䠅 [61] 䛻ᇶ䛵䛝䠈⤖ᬗ䛾↓ṍ䜏ⷧ໬୪䜃䛻䝏䝱䝛䝹䜹䝑䝖⤖ᬗෆቨ㠃䛾ṍ䜏㝖ཤ䜢ヨ䜏䛯䠊ᮏ❶䛷䛿 PCVM 䛾ᇶ♏ᴫᛕ䜔㛤Ⓨ䛧䛯㟁ᴟ䛻䜘䜛ຍᕤ≉ᛶ䜢⤂௓䛩䜛䠊䛭䛧䛶ᴟⷧ⤖ᬗ䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗෆቨ㠃ฎ⌮䛾ヲ⣽䜢グ㏙䛧䠈SPring-8 䛻䛚䛡䜛⤖ᬗᛶホ౯⤖ᯝ䜢♧䛩䠊

3.2 Plasma Chemical Vaporization Machining
3.2.1 ᇶ♏≉ᛶ䛸⿦⨨⣔㻌
PCVM 䛸䛿䠈኱Ẽᅽ㞺ᅖẼୗ䛻䛚䛔䛶㟁ᴟ䛸⿕ຍᕤ≀䛸䛾㛫䛻䠈㧗࿘Ἴ㟁ሙ䜢༳ຍ䛩䜛䛣䛸䛷Ⓨ⏕䛥䛫䛯ᙅ㟁㞳䝥䝷䝈䝬䜢฼⏝䛧䛯ຍᕤᡭἲ䛷䛒䜛䠊ᙅ㟁㞳䝥䝷䝈䝬୰䛷䛿ẼయศᏊ䛾኱㒊ศ䛿୰ᛶ⢏Ꮚ䛸䛺䛳䛶Ꮡᅾ䛧䛶䛔䜛䠊䝝䝻䝀䞁➼䛾㟁Ẽ㝜ᛶᗘ䛾኱䛝䛺ศᏊ䜢ᙅ㟁㞳䝥䝷䝈䝬୰䛷άᛶ䛺୰ᛶ䝷䝆䜹䝹䜈䛸ศゎ䛧䠈⿕ຍᕤ≀⾲㠃䛾ཎᏊ䛸⤖ྜ䛥䛫䠈཯ᛂ⏕ᡂ≀䜢㞺ᅖẼ୰䜈ᣑᩓ䛥䛫䜛䛣䛸䛷ᮦᩱ㝖ཤ䛜㐍⾜䛩䜛䠊཯ᛂ䜺䝇䛸䛧䛶䛿䠈⿕ຍᕤ≀䠄䛣䛣䛷䛿䝅䝸䝁䞁䠅䛸཯ᛂ䜢㉳䛣䛧䜔䛩䛟䠈⏕䛨䛯཯ᛂ⏕ᡂ≀䛜⵨Ẽᅽ䛾㧗䛔᥹Ⓨᛶ≀㉁䛷䛒䜛ᚲせ䛜䛒䜛䠊ᮏ◊✲䛷䛿䠈㐣ཤ䛾◊✲䛻䛚䛔䛶ᐇ⦼䛾䛒䜛 CF4 䛸 SF6 䜢⏝䛔䠈Ⓨ⏕䛩䜛 F*䝷䝆䜹䝹䛸 Si 䛸䛾௨ୗ䛾䜘䛖䛺໬Ꮫ཯ᛂ䜢฼⏝䛧䛯䠊

31

32

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇Si + 4F* → SiF4 ↑኱Ẽᅽ䛻䛚䛡䜛 SiF4 䛾ἛⅬ䛿⣙ 160 K 䛷䛒䜚䠈ᖖ(3.1)

䛻䛚䛔䛶᥹Ⓨᛶ≀㉁䛷䛒䜛䠊䛣䛾䜘䛖䛻䠈ຍᕤ䛾⣲㐣⛬䛿⁐ᾮ䜶䝑䝏䞁䜾䛸ྠᵝ䛻ཎᏊ༢఩䛾໬Ꮫ཯ᛂ䛻䜘䜛䜒䛾䛷䛒䜛Ⅽ䠈ᮦᩱᮏ᮶䛾ᛶ㉁䜢ᦆ䛺䛖䛣䛸䛺䛟䠈⤖ᬗᏛⓗほⅬ䛛䜙䜒ඃ䜜䛯ຍᕤ㠃䛾๰ᡂ䛜ᮇᚅ䛥䜜䜛䠊䛺䛚䠈㟁ᴟᮦᩱ䛸䛧䛶䜰䝹䝬䜲䝖ฎ⌮䜢᪋䛧䛯䜰䝹䝭䝙䜴䝮⣔䛾ᮦᩱ䜢⏝䛔䜛䛣䛸䛷䠈㟁ᴟ䛾౵㣗䜢㜵䛠䛣䛸䛜ྍ⬟䛷䛒䜛䠊䝥䝷䝈䝬୰䛻䛿άᛶ໬䛧䛯୰ᛶ䝷䝆䜹䝹䛾௚䛻䠈㟁Ꮚ䜔䜲䜸䞁䛸䛔䛳䛯Ⲵ㟁⢏Ꮚ䜒Ꮡᅾ䛧䛶䛔䜛䠊䛭䜜䜙䛾Ⲵ㟁⢏Ꮚ䛜኱䛝䛺㐠ື䜶䝛䝹䜼䞊䜢᭷䛧䛶ຍᕤ≀䛻⾪✺䛩䜛䛸䠈䝇䝟䝑䝍䝸䞁䜾䛻䜘䜛≀⌮ⓗ䛺ᮦᩱ㝖ཤ䜔ຍ⇕స⏝䛻䜘䜚ຍᕤኚ㉁ᒙ䛜ᙧᡂ䛥䜜䜛ྍ⬟ᛶ䛜䛒䜛䠊༳ຍ䛩䜛㧗࿘Ἴ㟁ሙ䛾࿘Ἴᩘ䜢ୖ䛢䜛䛣䛸䛷䠈䝥䝷䝈䝬୰䛻Ꮡᅾ䛩䜛Ⲵ㟁⢏Ꮚ䛿㝈ᐃ✵㛫䛻ᤕᤊ䛥䜜䜛䠊䝥䝷䝈䝬≧ែ䛿Ⲵ㟁⢏Ꮚ䛾⾪✺䛻䜘䜛㟁㞳䠈䛒䜛䛔䛿ບ㉳స⏝䛻䜘䛳䛶⥔ᣢ䛥䜜䜛Ⅽ䠈Ⲵ㟁⢏Ꮚ䛾ᤕᤊ䛿䝥䝷䝈䝬㡿ᇦ䛾ᒁᅾ໬䜢ྍ⬟䛸䛩䜛䠊኱Ẽᅽ㞺ᅖẼୗ䛾䜘䛖䛻Ẽయᐦᗘ䛜㧗䛔ሙྜ䠈䝥䝷䝈䝬እ䛻ᣑᩓ䛧䛯୰ᛶ䝷䝆䜹䝹䛿ᇶᗏ≧ែ䛻䛒䜛ศᏊ䛸䛾┦஫స⏝䛻䜘䛳䛶䛯䛰䛱䛻୙άᛶ䛸䛺䜛䠊䛣䜜䛿 PCVM 䛻䜘䜛ຍᕤ㡿ᇦ䛿Ⓨ⏕䛥䛫䜛䝥䝷䝈䝬㡿ᇦෆ䛻㝈ᐃ䛥䜜䜛஦䜢ព࿡䛧䛶䛚䜚䠈㟁ᴟᙧ≧䛾ᕤኵ䛻䜘䜚」
㞧ᙧ≧ᮦᩱ䜈䛾ᒁᡤⓗ䛺ຍᕤ䛜ྍ⬟䛸䛺䜛䠊䜎䛯䠈㧗䛔ຍᕤ䛾✵㛫ศゎ⬟䛻䜘䜚䠈ᗈ䛔✵㛫࿘Ἴᩘ㡿ᇦ䛻Ώ䜛ᙧ≧ㄗᕪ䛾ಟṇ䜒ྍ⬟䛸䛺䜛䠊ᮏ◊✲䛷౑⏝䛧䛯 PCVM ⿦⨨䛾ᴫほ෗┿䜢 Fig. 3.1 䛻♧䛩䠊ᮏ⿦⨨䛿䝗䝷䜲䝫䞁䝥䠈䝍䞊䝪ศᏊ䝫䞁䝥䛻䜘䜚 10−6 Torr ௨ୗ䛻䜎䛷┿✵᤼Ẽ䛜ྍ⬟䛷䛒䜚䠈㧗⣧ᗘ䛺 He 䜔 SF6䠈CF4 ➼䠈ᵝ䚻䛺䜺䝇䛜౪⤥ྍ⬟䛷䛒䜛䠊୍᪦┿✵᤼Ẽ䛧䛯ᚋ䠈He䠈䜒䛧䛟䛿཯ᛂ䜺䝇䛸䛾ΰྜ䜺䝇䜢ᑟධ䛧኱Ẽᅽ㞺ᅖẼ䛸䛩䜛䛣䛸䛷䠈Ᏻᐃ䛺䝥䝷䝈䝬Ⓨ⏕䜔኱Ẽ୰୙⣧≀䛾ᙳ㡪䛾ᢚไ䛜ྍ⬟䛷䛒䜛䠊䝥䝷䝈䝬Ⓨ⏕⏝䛾㟁※䛸䛧䛶 150 MHz 䛾㧗࿘Ἴ㟁※䜢฼⏝䛧䛶䛚䜚䠈䜲䞁䝢䞊䝎䞁䝇ᩚྜ⏝䛾䝬䝑䝏䞁䜾ᅇ㊰䜢௓䛧䛶㟁ᴟ䛻㟁ຊ䛜౪⤥䛥䜜䜛䠊䜎䛯䠈䜺䝇౪⤥㊰䜢」ᩘ᭷䛧䛶䛚䜚䠈㟁ᴟ䜢௓䛧䛶䝥䝷䝈䝬㡿ᇦ୰䛻ᖖ䛻᪂㩭䛺཯ᛂ䜺䝇䜢౪⤥䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊䝃䞁䝥䝹ഃ䛻 xy䠄Ỉᖹ㠃䠅䝇䝔䞊䝆䜢䠈㟁ᴟഃ䛻z䠄㖄┤䠅䝇䝔䞊䝆䜢ഛ䛘䛶䛚䜚䠈඲㍈䝁䞁䝢䝳䞊䝍ไᚚ䛜ྍ⬟䛷䛒䜛䛣䛸䛛䜙䠈ᒁᅾ໬䛥䛫䛯䝥䝷䝈䝬䜢㏿ᗘไᚚ䛧䛶㉮ᰝ䛥䛫䜛䛣䛸䛷䠈ᗈ䛔⠊ᅖ䛾ᙧ≧ಟṇ䜒⾜䛘䜛䠊ᴟⷧ⤖ᬗ䛾స〇䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨຍᕤ䛻⏝䛔䛯⿦⨨䝉䝑䝖䜰䝑䝥䛾ᴫ␎ᅗ䜢䛭䜜䛮
䜜 Fig. 3.2䠈Fig. 3.3 䛻♧䛩䠊ᴟⷧ⤖ᬗ䛾స〇䛻䛿䠈ඛ➃ᚄ䛾ᑠ䛥䛺㟁ᴟ䜢⏝䛔䠈㟁ᴟ୰ኸ㒊䛻䜺䝇ᑟධ㊰䜢タ䛡䜛䛣䛸䛷䠈䝥䝷䝈䝬㡿ᇦ䛻᪂㩭䛺཯ᛂ䜺䝇䜢౪⤥䛧䛯䠊䜎䛯䠈䝏䝱䝛䝹䜹䝑䝖ෆቨຍᕤ䛻䛿䠈෇ᰕ≧䛾ඛ➃㒊䜢᭷䛩䜛㟁ᴟ䜢౑⏝䛧䠈཯ᛂ䜺䝇䛸䛾ΰྜ㞺ᅖẼ୰䛷㟁ᴟ䜢㧗㏿ᅇ㌿䛥䛫䜛䛣䛸䛷䠈䝥䝷䝈䝬㡿ᇦ䜈䛾᪂㩭䜺䝇䛾౪⤥䠈཯ᛂ⏕ᡂ≀䛾ᣑᩓ䜢⾜䛳䛯䠊ヲ⣽䛿ᚋ㏙䛩䜛䠊

3.2㻌 Plasma Chemical Vaporization Machining

Fig. 3.1.

Fig. 3.2.

Picture of PCVM chamber.

Schematic diagram of the equipment for thin crystals.

33➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇34

Fig. 3.3.

Schematic diagram of the equipment for channel-cut crystals.

3.2.2 ຍᕤ≉ᛶ㻌
3.2.2.1

ຍᕤ᮲௳䛸✵㛫ศゎ⬟䛾ホ౯㧗䛔ຍᕤ䛾✵㛫ศゎ⬟䜢ᚓ䜛䛯䜑䛻䛿䝥䝷䝈䝬䛾ᒁᅾ໬䛜ᚲ㡲䛷䛒䜛䠊䝥䝷䝈䝬Ⓨ⏕㡿ᇦ䛿㧗㟁ሙ㡿ᇦ䛻㝈䜙䜜䜛Ⅽ䠈㟁ᴟ㠃✚䜢ᑠ䛥䛟䛩䜛䛣䛸䛷ᒁᅾ໬䛜㐩ᡂ䛥䜜䜛䛸⪃䛘䜙䜜䠈ඛ➃ᚄ 0.3
mm 䛾㟁ᴟ䜢タィ䠈〇స䛧䛯䠊ⷧ䛔⤖ᬗస〇⏝䛾䝉䝑䝖䜰䝑䝥䜢⏝䛔䛶 Si(100) ヨᩱ䛻ᑐ䛧䛶ᚓ䜙䜜䜛඾ᆺⓗ䛺ຍᕤ⑞䜢 Fig. 3.4 䛻♧䛩䠊཯ᛂ䜺䝇䛿 SF6 䛷䛒䜛䠊䝥䝷䝈䝬䛾Ⓨ⏕᮲௳䛻䜘䛳䛶ຍᕤ⑞ᙧ≧䜔ຍᕤᚋ⾲㠃≉ᛶ䛿኱䛝䛟ᙳ㡪䜢ཷ䛡䜛䠊Fig. 3.4a 䛾䜘䛖䛺ຍᕤ⑞䛸䛺䜛᮲௳䛷䛿䠈⾲㠃⢒䛥䛾ᝏ໬䜔䠈➼㏿㉮ᰝ䛻䛚䛔䛶䜒኱䛝䛺ຍᕤ㔞ศᕸ䜢⏕䛨䛥䛫䜛୍᪉䛷䠈Fig. 3.4b 䛾䜘䛖䛺ຍᕤ⑞䛸䛺䜛᮲௳䛷䛿ᴟ䜑䛶ᖹ⁥䛺⾲㠃䛸ᆒ୍䛺ຍᕤ㔞䛜ᐇ⌧䛥䜜䜛䠊ᇶᮏⓗ䛻㐣ከ䛺ᢞධ㟁ຊ༳ຍ᫬䜔཯ᛂ䜺䝇⃰ᗘ䛜㧗䛔᫬䛿⾲㠃≉ᛶ䜢ᝏ໬䛥䛫䜛䛣䛸䛜⤒㦂ⓗ䛻▱䜙䜜䛶䛔䜛Ⅽ䠈䛭䛾௚䛾᮲௳䛷䛒䜛㟁ᴟ䠈ヨᩱ㛫䛾䜼䝱䝑䝥䛸ΰྜ䜺䝇ᢞධὶ㔞䜢ኚ໬䛥䛫䠈ຍᕤ⑞䝥䝻䝣䜯䜲䝹䠈ຍᕤ㔞䠈ຍᕤ⑞ᖜ䜢ㄪᰝ䛧䛯䠊䛭䛾㝿䛾཯ᛂ䜺䝇⃰ᗘ䛿 0.5%䠈ᢞධ㟁ຊ䛿 18 W䠈ຍᕤ᫬㛫䛿 5 ⛊䛸䛧䛯䠊⤖ᯝ䜢 Fig.
3.5 䛻♧䛩䠊ຍᕤ㔞䛿䜼䝱䝑䝥䜢ኚ໬䛥䛫䛶䜒኱ᕪ䛺䛟䠈ᢞධὶ㔞䛻ᑐ䛧䛶䜋䜌⥺ᙧⓗ䛻ኚ໬䛧䛯䛣䛸䛛䜙䠈䛔䛪䜜䛾䜼䝱䝑䝥䛻䛚䛔䛶䜒䝷䝆䜹䝹䛾ᾘ㈝⋡䛻኱ᕪ䛺䛔䛸ゝ䛘䜛䠊ຍᕤ⑞ᖜ䛻㛵䛧䛶䛿䠈

3.2㻌 Plasma Chemical Vaporization Machining

Fig. 3.4.

Typical removal footprints with an electrode of diameter of 0.3 mm under

different removal conditions. Surface roughness becomes worse under the condition (a),while that becomes better under the condition (b).

Fig. 3.5.

Removal characteristics with various flow rates of reactive gas and gaps

between the electrode and sample. Dependence of removal volume (a) and FWHM ofremoval footprint (b). Distorted profiles are obtained at open symbols.

Fig. 3.6.

Distribution of removal rate under an optimized condition. (a) Two-

dimensional distribution and (b) line profile along the white dashed line in Panel (a).

35➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇36

Fig. 3.7.

Removal volume as a function of plasma dwelling time.

䜼䝱䝑䝥䜢ᑠ䛥䛟䛧䛯᫬䠈䜘䜚⣽䛔ຍᕤ⑞䛜ᚓ䜙䜜䛯䠊䛣䛾஦䛛䜙䠈ຍᕤ⑞䝥䝻䝣䜯䜲䝹䛿㟁ሙศᕸ䛻౫Ꮡ䛧䛶䛔䜛䛸ゝ䛘䜛䠊䜼䝱䝑䝥䛜ᑠ䛥䛔᪉䛜㟁ᴟ┤ୗ䛻㧗㟁ሙ㡿ᇦ䛜㞟୰䛧䠈䜘䜚ᚤᑠ䛺ຍᕤ⑞䛜ᚓ䜙䜜䛯䛸⪃䛘䜙䜜䜛䠊䛯䛰䛧䠈ຍᕤ⑞䛾䝥䝻䝣䜯䜲䝹䛻ὀ┠䛧䛯㝿䠈ㄪᰝ䛧䛯䜼䝱䝑䝥䛾୰䛷䛿 0.25mm 䛜᭱䜒Ᏻᐃ䛧䛶Ⰻዲ䛺䝥䝻䝣䜯䜲䝹䛜ᚓ䜙䜜䛯䠊ᚑ䛳䛶䠈Ⰻዲ䛺䝥䝻䝣䜯䜲䝹䛸༑ศ䛺ຍᕤ㏿ᗘ䜢Ᏻᐃⓗ䛻ᚓ䜛䛯䜑䛻䠈䜼䝱䝑䝥 0.25 mm䠈ὶ㔞 90 sccm 䜢᭱㐺್䛸䛧䛯䠊
๓㏙䛧䛯㏻䜚䠈ຍᕤ≉ᛶ䛿ᢞධ㟁ຊ䛻኱䛝䛟౫Ꮡ䛩䜛䠊㐣ከ䛺ᢞධ㟁ຊ䛿⾲㠃⢒䛥䛾ᝏ໬䜢ᣍ䛝䠈㐣ᑠ䛺ᢞධ㟁ຊ䛿䝥䝷䝈䝬䛾୙Ᏻᐃ໬䜢䜒䛯䜙䛩䠊㟁ຊ䛜㐣ᑠ䛺ሙྜ䛿䝥䝷䝈䝬䛾Ⓨගᙉᗘ䠈䝇䝨䜽䝖䝹ศᕸ䛜᫂☜䛻ኚ໬䛩䜛Ⅽ䠈䝥䝷䝈䝬䛜Ᏻᐃ໬䛩䜛ᚲせ᭱ప㝈䛾㟁ຊᢞධ䛜ᮃ䜎䛧䛔䠊䛣䛾㟁ᴟ䛻ᑐ䛧䛶䛿⣙ 16 W 䛷䛒䜚䠈䛭䛾㝿䛾ຍᕤ㏿ᗘศᕸ䜢 Fig. 3.6 䛻♧䛩䠊䜺䜴䝇㛵ᩘ䛻㏆䛔⁥䜙䛛䛺ศᕸ䛜ᚓ䜙䜜䠈䛭䛾ᖜ䛿⣙ 0.5 mm FWHM 䛷䛒䛳䛯䠊ᚑ䛳䛶䠈✵㛫࿘Ἴᩘ 2 mm−1 ௨ୗ䛾ཌ䜏ศᕸಟṇ⬟ຊ䜢᭷䛧䛶䛔䜛䛣䛸䛜☜ㄆ䛥䜜䛯䠊ḟ䛻䠈䝥䝷䝈䝬⁫ᅾ᫬㛫䛻ᑐ䛩䜛ຍᕤ㔞䛾⥺ᙧᛶ䜢ㄪᰝ䛧䛯䠊⤖ᯝ䜢 Fig. 3.7 䛻♧䛩䠊㠀ᖖ䛻Ⰻ䛔⥺ᙧᛶ䛜☜ㄆ䛥䜜䠈ㄗᕪ䛿 2%௨ୗ䛷䛒䛳䛯䠊ᖹᯈヨᩱ䛻ᑐ䛧䛶䝥䝷䝈䝬䛾➼㏿㉮ᰝ䛻䜘䜚⣙280 µm ຍᕤ䛧䛯㝿䛾⾲㠃䝥䝻䝣䜯䜲䝹䛜 6–7 µm PV 䛷䛒䛳䛯䛣䛸䛛䜙䜒䠈ᮏᡭἲ䛿 2–3%䛾ຍᕤᏳᐃᛶ䜢᭷䛧䛶䛔䜛䛣䛸䛜☜ㄆ䛥䜜䛯䠊

3.2.2.2⤖ᬗ㠃౫Ꮡᛶホ౯䛒䜙䜖䜛⤖ᬗ㠃䛻ᑐ䛩䜛㐺⏝ᛶ䛿 X ⥺⏝⤖ᬗ⣲Ꮚຍᕤἲ䛸䛧䛶㔜せ䛷䛒䜛䠊⁐ᾮ䛻䜘䜛䝅䝸䝁䞁䛾䜶䝑䝏䞁䜾䛿୍⯡ⓗ䛻⤖ᬗ㠃䛻ᑐ䛧䛶␗᪉ᛶ䜢♧䛩䠊≉䛻᭱⾲㠃ཎᏊ䛾⤖ྜᡭ䛜ᑡ䛺䛟୙Ᏻᐃ

3.2㻌 Plasma Chemical Vaporization Machining37

䛺 (100) 㠃䜔 (110) 㠃䛸䠈᭱Ᏻᐃ䛺 (111) 㠃䛸䛾䜶䝑䝏䞁䜾䝺䞊䝖䛾ᕪ䛿㢧ⴭ䛷䛒䜛䠊䛣䛾䜘䛖䛺␗᪉ᛶ䛿㐺⏝ྍ⬟䛺⤖ᬗ㠃䛾ไ㝈䜔䠈⾲㠃≉ᛶ䛾ᝏ໬䛻䛴䛺䛜䜛䠊୍⯡ⓗ䛻 KOH ➼䛾䜰䝹䜹䝸⁐ᾮ䜢⏝䛔䜛䛸␗᪉ᛶ䛿ቑ䛧䠈HNO3 ➼䛾㓟ᛶ⁐ᾮ䜢⏝䛔䜛䛸➼᪉ⓗ䛻䛺䜛䠊㓟ᛶ⁐ᾮ䛻䜘䜛䜶䝑䝏䞁䜾䛿୺䛻 HF 䜔 HNO3 䛾ΰྜ⁐ᾮ䜢⏝䛔䛶⾜䜟䜜䠈௨ୗ䛾䜘䛖䛺໬Ꮫ཯ᛂ䛜⏕䛨䜛䛣䛸䛷ຍᕤ䛜㐍⾜䛩䜛䛸⪃䛘䜙䜜䛶䛔䜛䠊HNO 2 + HNO3 + H 2 O → 2HNO 2 + 2OH − + 2h +Si + 2H 2 O + 4h + → SiO 2 + 4H +(3.2)

SiO 2 + 6HF → H 2SiF6 + 2H 2 O
HNO3 䛿ள◪㓟䠄HNO2䠅䛸཯ᛂ䛧䛶䝩䞊䝹䠄h+䠅䜢ᙧᡂ䛧䠈⏕䛨䛯䝩䞊䝹䛜 Si 䜢㓟໬䛥䛫䜛䠊䛭䛧䛶 HF
䛻䜘䛳䛶 SiO2 䛜㝖ཤ䛥䜜䜛䠊䛣䜜䜙 2 ẁ㝵䛾䝥䝻䝉䝇䜢⤒䜛䛯䜑䠈᏶඲䛻➼᪉ⓗ䛺䜶䝑䝏䞁䜾䜢ᐇ⌧
䛩䜛Ⅽ䛻䛿ᴟ䜑䛶⢭ᐦ䛺⃰ᗘ䠈ᗘไᚚ䛜ồ䜑䜙䜜䜛䠊䜎䛯䠈⁐ᾮ䛾⁫␃➼䛻䜘䛳䛶䜒ᙳ㡪䜢ཷ䛡䜛䛯䜑䠈ຍᕤ䛾୙Ᏻᐃ໬䛜ᠱᛕ䛥䜜䜛䠊
PCVM 䛻䜘䜛ຍᕤ䛿ᘧ䠄3.1䠅䛾䜘䛖䛺 Si 䛸 F*䠄䜒䛧䛟䛿 SFx*䠅䛸䛾༢⣧䛺໬Ꮫ཯ᛂ䛻ᇶ䛵䛔䛶䛔䜛䠊
F*䛾཯ᛂᛶ䛾㧗䛥䠈Si–F ⤖ྜ䛾Ᏻᐃᛶ➼䛛䜙ྛ⤖ᬗ㠃䛻ᑐ䛧䛶➼᪉ⓗ䛺䜶䝑䝏䞁䜾䛜ᮇᚅ䛥䜜䠈䛥䜙䛻Ẽయ F*䛸䛾໬Ꮫ཯ᛂ䛷䛒䜛஦䛛䜙䠈䝷䝆䜹䝹ᐦᗘศᕸ䜒ᆒ୍䛻䛺䜛䛸⪃䛘䜙䜜䜛䠊䛣䜜䜙䛾⌮⏤䛛䜙䠈PCVM 䛿䝅䝸䝁䞁䛻ᑐ䛧䛶᏶඲䛻➼᪉ⓗ䛺䜶䝑䝏䞁䜾䛜ྍ⬟䛰䛸䛥䜜䛶䛝䛯䛜䠈ᐇ㦂ⓗ䛻♧䛥䜜䛯౛䛿↓䛔䠊䛣䛣䛷䛿䠈CZ-Si(100)䠈(110)䠈(111)䠈FZ-Si(511)䠈(211) 㠃䛻ᑐ䛧䛶ຍᕤ㏿ᗘ䛾⤯ᑐホ౯䜢⾜䛳䛯䠊ඛ➃ᚄ 0.5 mm 䛾㟁ᴟ䜢⏝䛔䠈䝥䝷䝈䝬䜢 1 ㍈㉮ᰝ䛥䛫䛯㝿䛾ຍᕤ⑞᩿㠃䝥䝻䝣䜯䜲䝹䛛䜙ホ౯䜢⾜䛳䛯䠊ホ౯ᐇ㦂䛿 2 ᪥䛻ศ䛡䛶⾜䛔䠈䛭䜜䛮䜜 2 䝷䜲䞁䛪䛴ຍᕤ⑞䜢ྲྀᚓ䛧䛯䠊ຍᕤ᮲௳䜢 Table 3.1 䛻䠈⤖ᯝ䜢 Fig. 3.8 䛻♧䛩䠊ຍᕤ⑞䛾᩿㠃䝥䝻䝣䜯䜲䝹䠄Fig.
3.8a䠅䛛䜙䛿⤖ᬗ㠃䛻ᑐ䛧䛶┠❧䛳䛯ຍᕤ㏿ᗘ䛾㐪䛔䛿ぢ䜙䜜䛺䛔䠊䜎䛯䠈ຍᕤ⑞῝䛥䛜኱䛝䛟䛺䜛䛻䛴䜜䠈ຍᕤ⑞ᖜ䛿ᑠ䛥䛟䛺䜛䛸䛔䛖┦㛵䛜ぢ䜙䜜䛯䠄Fig. 3.8b䠅䠊䛣䛣䛷䝟䝷䝯䞊䝍 Ap 䜢௨ୗ䛾䜘䛖䛻

Table 3.1.
Etchant

Experimental condition for investigating lattice dependence of removal rate.

Electrode

Flow rate

Electric

Scan speed

Number of(mm/min)

scans

10

4 (2/day)Gap (mm)gas

diameter (mm)(sccm)

power (W)

0.5

100

17

He:SF6 =99.5:0.5

0.3

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

38

Fig. 3.8.

Removal characteristics for various lattice planes. (a) Cross-sectional removal

profiles, (b) depth and width of the cross sections, and (c) parameter Ap normalized by thatof Si(100). Error bars show the standard deviation.

ᐃ⩏䛩䜛䠊Ap = RD × RW

(3.3)

RD䠈RW 䛿䛭䜜䛮䜜ຍᕤ⑞῝䛥䠈ᖜ䛾ᖹᆒ್䛷䛒䜛䠊ྛ⤖ᬗ㠃䛻ᑐ䛩䜛 Ap 䜢 Si(100) 䛾 Ap 䛷つ᱁໬䛧䛯䜒䛾䜢 Fig. 3.8c 䛻♧䛩䠊Si(511) ௨እ䛿ㄗᕪ± 2%䛾⠊ᅖ䛻཰䜎䛳䛶䛚䜚䠈ᴟ䜑䛶㧗䛔➼᪉ᛶ䛜☜ㄆ䛥䜜䛯䠊Si(511) 䛻㛵䛧䛶䛿䠈䝃䞁䝥䝹䛻ẚ㍑ⓗ኱䛝䛺䛖䛽䜚䛜☜ㄆ䛥䜜䛶䛚䜚䠈䝃䞁䝥䝹䛾㟁఩䛜୙ᆒ୍䛷䛒䛳䛯஦䛛䜙䠈኱䛝䛺ㄗᕪ䛾せᅉ䛻䛺䛳䛯䛸⪃䛘䜙䜜䜛䠊䜘䜚⢭ᐦ䛺ᐃ䛻䛿䠈FZ 䝅䝸䝁䞁䛾⌫య䛻ᑐ䛧䛶 PCVM ຍᕤ䜢᪋䛩ᚲせ䛜䛒䜛䛜䠈ᮏㄽᩥ䛷䛿䛣䛣䜎䛷䛻␃䜑䛶䛚䛟䠊

3.2㻌 Plasma Chemical Vaporization Machining
3.2.2.339⾲㠃⢒䛥䛾ホ౯PCVM ຍᕤ䛻䜘䜚ᚓ䜙䜜䜛⾲㠃ᖹ⁥ᛶ䜢ホ౯䛩䜛Ⅽ䠈⾲㠃䛾⢒䛔 FZ-Si(110) ⤖ᬗ䛻ᑐ䛧䛶ඛ➃ᚄ 0.3 mm 㟁ᴟ䜢⏝䛔䛶ຍᕤ䜢᪋䛧䠈㝖ཤ῝䛥䛸⾲㠃⢒䛥䛸䛾㛵ಀ䜢ㄪᰝ䛧䛯䠊⾲㠃⢒䛥䛿㉮ᰝᆺⓑⰍᖸ΅ィ䠄ZYGO䠈NewView200HR䠅䜢⏝䛔䛶ᐃ䛧䛯䠊ᐃ⠊ᅖ䛿 64 µm × 48 µm 䛷䛒䜛䠊⤖ᯝ

䜢 Fig. 3.9 䛻♧䛩䠊ከ䛟䛾䝇䜽䝷䝑䝏䜢᭷䛩䜛ึᮇ⾲㠃䛛䜙 PCVM 䛻䜘䜚 1–2 µm 㝖ཤ䛧䛯㝿䠈⾲㠃⢒䛥䛜ቑ኱䛧䛯䠊ึᮇ⾲㠃䛿䝇䜽䝷䝑䝏䜔Ḟ㝗➼䛾⤖ᬗᛶ䛾஘䜜䜢ከ䛟᭷䛧䛶䛔䜛䛸⪃䛘䜙䜜䜛䠊᱁Ꮚ䛾ᩚ䛳䛯⤖ᬗ㠃䛻ᑐ䛧䛶䛿ຍᕤ㏿ᗘ䛾➼᪉ᛶ䜢☜ㄆ䛧䛯䜒䛾䛾䠈⤖ᬗᛶ䛾஘䜜䛯㡿ᇦ䛿ඃඛⓗ䛻ຍᕤ䛜㐍⾜䛧䠈䛭䛾⤖ᯝ⾲㠃䛜Ⲩ䜜䛯䜒䛾䛸⪃䛘䜙䜜䜛䠊䛧䛛䛧䠈⾲㠃䛻ᒁᅾ䛩䜛⤖ᬗᏛⓗ䝎䝯䞊䝆䜢㝖ཤ䛧䛯ᚋ䛿䠈ᚎ䚻䛻⾲㠃⢒䛥䛿పୗ䛧䛶䛔䛝䠈᭱⤊ⓗ䛻䛿⣙ 0.1 nm rms 䛸䛔䛖㉸ᖹ⁥㠃䛜ᚓ
䜙䜜䛯䠊PCVM 䛿 F*䝷䝆䜹䝹䛾ᣑᩓ䛻䜘䛳䛶ຍᕤ䛜ᚊ㏿䛥䜜䛶䛔䜛䛣䛸䛛䜙䠈ཎᏊ䝇䜿䞊䝹䛾ᖹ⁥໬䛜ᐇ⌧䛧䛯䜒䛾䛸⪃䛘䜙䜜䜛䠊ᮏᐇ㦂䛛䜙䠈⤖ᬗᏛⓗ䝎䝯䞊䝆䛜⾲㠃㏆ഐ䛻ᒁᅾ䛧䛶䛔䜛䛸௬ᐃ䛩䜛䛸䠈ᖹ⁥㠃䛜ᚓ䜙䜜䛯㝿䠈⤖ᬗ䝎䝯䞊䝆䛿᏶඲䛻㝖ཤ䛥䜜䛯䛸ゝ䛘䜛䠊FZ 䝅䝸䝁䞁䛿⤖ᬗෆ䛻䜋䛸䜣䛹Ḟ㝗䜢ྵ䜣䛷䛚䜙䛪䠈⤖ᬗ䝎䝯䞊䝆䛿୺䛻◊☻䛺䛹䛾ᶵᲔⓗ䝥䝻䝉䝇䛻䜘䜛䜒䛾䛷䛒䜛䠊ᚑ䛳䛶䠈PCVM ຍᕤ䛻䜘䛳䛶⤖ᬗ䝎䝯䞊䝆䛿᏶඲䛻㝖ཤྍ⬟䛷䛒䜚䠈᪂䛯䛺Ḟ㝗➼䜢ᑟධ䛩䜛䛣䛸䛺䛟ⷧ໬䛜ྍ⬟䛷䛒䜛䛸⪃䛘䜙䜜䜛䠊

Fig. 3.9.

Surface morphologies at several removal depths. (a) 0 µm䠈(b) 1–2 µm䠈(c)8–10 µm䠈(d) 12–15 µm䠈(e) ~ 200 µm䠊

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇40

3.3 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇㻌ᮏ⠇䛻䛚䛔䛶䠈PCVM 䛻䜘䜛䝡䞊䝮䝇䝥䝸䝑䝍䛸䛧䛶䛾ᴟⷧ⤖ᬗ䛾స〇䛻㛵䛧䛶グ㏙䛩䜛䠊ຍᕤᡭ㡰䛸ྛ䝥䝻䝉䝇䛾ヲ⣽䜢⤂௓䛧䠈ྛ✀䝃䞁䝥䝹䛾స〇⤖ᯝ䛺䜙䜃䛻 SPring-8 䛻䛚䛡䜛⤖ᬗᛶホ౯⤖ᯝ䜢♧䛩䠊䜎䛯䠈ᴟⷧ⤖ᬗ䛾ᅇᢡ≉ᛶ䛿౑⏝⎔ቃ䛻኱䛝䛟౫Ꮡ䛩䜛䠊᭷ຠ䛺౑⏝᪉ἲ䛻㛵䛧䛶䜒⤂௓䛩䜛䠊

3.3.1 ⤖ᬗ䝕䝄䜲䞁䛸๓ຍᕤ㻌ᮏ◊✲䛷䛿䠈ᴟⷧ⤖ᬗ䛾ᵓ㐀ⓗᏳᐃᛶ䜢☜ಖ䛩䜛Ⅽ䠈Feng 䜙䛾㛤Ⓨ䛧䛯 SOI 䝧䞊䝇䛾䝯䞁䝤䝺䞁ᵓ㐀 [44] 䛸ྠᵝ䛻䠈ཌ䛔ಖᣢ㒊䛾୰ᚰ㒊䛾䜏䜢ⷧ䛟䛧䛯❆ᆺᵓ㐀䜢᥇⏝䛩䜛䠊䛯䛰䛧ྲྀ䜚ᢅ䛔䜢ᐜ᫆䛸䛩䜛Ⅽ䠈䜘䜚ཌ䛔ಖᣢ㒊䜢☜ಖ䛩䜛䠊ᥦ᱌䛩䜛⤖ᬗᙧ≧䠄Type I䠅䜢 Fig. 3.10 䛻♧䛩䠊ಖᣢ
㒊䛿 25 mm ゅ䠈ཌ䜏 1.5 mm 䛸䛧䠈୰ᚰ㒊┤ᚄ 5 mm 䜒䛧䛟䛿 6 mm 䛾㡿ᇦ䜢ⷧ䛟䛩䜛䠊X ⥺䛾㏱㐣䝟䝇䜢☜ಖ䛩䜛Ⅽ䠈ಖᣢ㒊䛸ⷧ䛔㡿ᇦ䛸䛿 15°䠄or 20°䠅䛾䝔䞊䝟䞊䛷᥋⥆䛩䜛䠊䛣䛾䜘䛖䛺ᙧ≧䜢 PCVM 䛾䜏䛷ᙧᡂ䛩䜛䛣䛸䛿ከ኱䛺᫬㛫䜢せ䛩䜛Ⅽ䠈Fig. 3.11 䛾䜘䛖䛻ᶵᲔⓗ䛻๓ຍᕤ䜢᪋䛧䛯䠊䜎䛪䠈25 mm ゅ䠈ཌ䜏ᩘ mm 䛾ᖹᯈ⤖ᬗ䜢 FZ 䜲䞁䝂䝑䝖䛛䜙ษ䜚ฟ䛩䠊ḟ䛻◊๐ຍᕤ䛻䜘䜚䠈୰ኸ䛾䝔䞊䝟䞊ᙧ≧䜢ᙧᡂ䛩䜛䠊◊๐䛻䜘䛳䛶⏕䛨䛯ຍᕤኚ㉁ᒙ䜢⁐ᾮ䜶䝑䝏䞁䜾

Fig. 3.10.

Schematic diagrams of the window-shaped beam splitter crystal (Type I).
Unit is mm.

Fig. 3.11.

Pre-fabrication procedure of crystal Type I.

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇41䛻䜘䜚㝖ཤ䛩䜛䠊䛭䛧䛶ୖୗ㠃䛸䜒䛻 Chemical Mechanical Polishing䠄CMP䠅䜢᪋䛧ᖹ⁥໬䛩䜛䛸ඹ䛻䠈ⷧ䛔㡿ᇦ䛾ཌ䜏䜢 200 µm 䜎䛷ⷧ໬䛩䜛䠊䛣䛾⤖ᬗ Type I 䛾ሙྜ䠈᭱⤊ⓗ䛻ᚓ䜙䜜䜛᭷ຠศ๭㡿ᇦ䛿ึᮇ䛾ⷧ䛔㡿ᇦ䛾ᗈ䛥䠄┤ᚄ 5–6 mm䠅䛻䜘䛳䛶ไ㝈䛥䜜䠈ᢏ⾡ⓗไ⣙䛻䜘䜚䛣䜜௨ୖᗈ䛟䛩䜛䛣䛸䛿ᅔ㞴䛷䛒䜛䠊඾ᆺⓗ䛻䠈᭱⤊ⓗ䛺᭷ຠศ๭㡿ᇦ䛿~ 2–3 mm ゅ䛸䛺䜛䠊䜘䜚ᗈ䛔᭷ຠ㡿ᇦ䜢ᚓ䜛䛯䜑䠈ᖹᯈ⤖ᬗ䛛䜙 PCVM 䛾䜏䛻䜘䜛ⷧ໬䜒ヨ䜏䛯䠄Type II䠅䠊䛯䛰䛧䠈
1.5 mm ཌ䛾⤖ᬗ䛛䜙୰ᚰ㒊䛾ཌ䜏䜢 10 µm ⛬ᗘ䛻䜎䛷ⷧ໬䛩䜛䛣䛸䛿᫬㛫ⓗ䛻㠀⌧ᐇⓗ䛷䛒䜛Ⅽ䠈0.6 mm ཌ䛾ᖹᯈ⤖ᬗ䜢⏝ព䛧䛯䠊

3.3.2 ຍᕤᡭ㡰㻌ᮏ㡯䛻䛚䛔䛶䠈䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䠈≉䛻ᵝ䚻䛺䝥䝻䝉䝇䜢ᚲせ䛸䛩䜛⤖ᬗ Type I 䛾ຍᕤᡭ㡰䛾ヲ⣽䜢グ䛩䠊⤖ᬗ Type II 䛾స〇᫬䛿䠈➨ 3.3.2.4䛂ⷧ໬ຍᕤ䛃䛾䝥䝻䝉䝇䜢ୖୗ୧㠃䛻ᑐ䛧䛶⾜䛖䠊

3.3.2.1ᇶᮏ᪉㔪ຍᕤᡭ㡰䛾ヲ⣽䛻ධ䜛๓䛻䠈ᇶᮏ᪉㔪䜢♧䛩䠊⤖ᬗ Type I 䛾ຍᕤ䝥䝻䝉䝇䛿኱䛝䛟 3 ẁ㝵䛻ศ䛡䜙䜜䜛䠄Fig. 3.12䠅䠊ᶵᲔຍᕤ䛻ᇶ䛵䛟๓ຍᕤ⤊஢᫬䠈⁐ᾮ䜶䝑䝏䞁䜾䜢᪋䛧䛶䛿䛔䜛䜒䛾䛾䠈䝔䞊䝟䞊㠃䛻䛿ཌ䛔ຍᕤኚ㉁ᒙ䛜Ꮡᅾ䛧䛶䛚䜚䠈䛭䛾ṧ␃ᛂຊ䛻䜘䛳䛶⤖ᬗ඲య䛻኱䛝䛺᱁Ꮚ㠃䛾‴᭤䜢䜒䛯䜙䛧䛶䛔䜛䠄Fig. 3.13䠅䠊ຍᕤኚ㉁ᒙ䛾ཌ䜏䛿ᩘ༑䛛䜙ᩘⓒ µm 䛰䛸⪃䛘䜙䜜䜛Ⅽ䠈ⷧ䛔㡿ᇦ䛸䛿⊂❧䛻 PCVM ຍᕤ䜢᪋䛧䛯䠄Fig. 3.12a䠅䠊䜎䛯䠈䝔䞊䝟䞊㒊䛸䛿཯ᑐഃ䛾ᖹᆠ㠃䠄௨ᚋ䇺⿬㠃䇻䛸࿧䜆䠅䛿 CMP 䛻䜘䛳䛶◊☻䛜᪋䛥䜜䛶䛔䜛䜒䛾䛾䠈䝥䝻䝉䝇୰䛻ΰධ䛧䛯ᚤᑠ⢏Ꮚ➼䛾ᙳ㡪䛷䝇䜽䝷䝑䝏䜔Ḟ㝗䛜ᑟධ䛥䜜䛶䛔䜛䠊ᴟ䜑䛶ᚤᑠ䛺⤖ᬗ䝎䝯䞊䝆䛷䛿䛒䜛䜒䛾䛾䠈ⷧ䛔㡿ᇦ䛾ཌ䜏䛜 10µm ⛬ᗘ䛸䛺䜛䛸᱁Ꮚ㠃䛻ᑐ䛧䛶῝้䛺ᙳ㡪䜢ཬ䜌䛩䠄Fig. 3.14a䠅䠊ᚑ䛳䛶䠈⿬㠃䜒 PCVM 䛻䜘䛳䛶

Fig. 3.12.

PCVM processes for fabricating a Type I crystal. Conceptual images of PCVM

at the tapered surface (a), the rear surface (b), and for thinning.

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

42Fig. 3.13.

Examples of X-ray reflection topograph from a thin Si(511) crystal without

the PCVM processes measured with a ( +, − ) parallel arrangement. Topographs measured
at relative rotation angles of −6 µrad (a), 0 µrad (b) and +6 µrad (c). Scale bar represents a
length of 2 mm.

Fig. 3.14.

Influence of scratches existing on rear surface of a thin crystal. Topographsfrom the same Si(511) crystal taken before (a) and after (b) the rear-surface PCVM.

ฎ⌮䜢⾜䛖䠄Fig. 3.12b䠅䠊䛣䛾㝿䠈Al 䛾䝇䝨䞊䝃䞊䜢⏝䛔䜛䛣䛸䛷㟁ᴟ䛸䜰䞊䝇ᯈ䛸䛾㛫䛾✵Ẽᒙ䜢ᇙ䜑䠈䝥䝷䝈䝬䛾ᏳᐃⓎ⏕䜢ᐇ⌧䛩䜛䠊䛭䛧䛶᭱ᚋ䛻ⷧ䛔㡿ᇦ䜢䠈ᒁᅾ໬䝥䝷䝈䝬䜢䝷䝇䝍䞊㉮ᰝ䛥䛫䜛䛣䛸䛷┠ⓗཌ䜏䜎䛷ⷧ໬䛩䜛䠄Fig. 3.12c䠅䠊ཌ䜏ㄗᕪศᕸ䜢ᐃ䛧䠈䛭䛾ㄗᕪ䜢ᡴ䛱ᾘ䛩䜘䛖䛺㏿ᗘศᕸ䛻䜘䛳䛶䝥䝷䝈䝬䜢㉮ᰝ䛥䛫䠈ཌ䜏䛾ᆒ୍໬䜒⾜䛖䠊

3.3.2.2

䝔䞊䝟䞊㠃ຍᕤ

䝔䞊䝟䞊㠃ຍᕤ䛾ヲ⣽䜢♧䛩䠊䝔䞊䝟䞊㠃䜢ⷧ䛔㡿ᇦ䛸䛿⊂❧䛛䛴୍ᣓ䛷 PCVM ຍᕤ䜢⾜䛖

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.15.

Results of an electrostatic calculation with a process configuration for thetapered-surface PCVM.

Fig. 3.16.

Fig. 3.17.

Picture of plasma during the tapered-surface PCVM.

Pictures of tapered surface of a Type I crystal before (a) and after (b) the
PCVM process.

43➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

44Ⅽ䠈ⷧ䛔㡿ᇦ䛸ྠᚄ䛾䜺䝇ᑟධཱྀ䜢᭷䛩䜛䝺䝥䝸䜹㟁ᴟ䜢〇స䛧䛯䠊㟼㟁ሙゎᯒ䝥䝻䜾䝷䝮䠄Field
Precision, SATE 7.0 [62]䠅䜢⏝䛔䛶㟁ሙศᕸ䜢ィ⟬䛧䛯⤖ᯝ䠈Fig. 3.15 䛻♧䛩䜘䛖䛻䝔䞊䝟䞊㠃ୖ䛾䜏䛻㧗㟁ሙ㡿ᇦ䛜㞟୰䛧䛯䛣䛸䛛䜙䠈䝔䞊䝟䞊㠃䛾⊂❧ຍᕤ䛜ྍ⬟䛷䛒䜛䛣䛸䛜♧၀䛥䜜䛯䠊ᮏ䝥䝻䝉䝇䛻䛚䛔䛶䠈䝥䝷䝈䝬䛾䝔䞊䝟䞊㠃ୖ䜈䛾ᒁᅾ໬䛰䛡䛷䛺䛟䠈ᗈ⠊ᅖ䛻Ώ䛳䛶ᆒ୍䛺䝥䝷䝈䝬䜢Ⓨ⏕䛥䛫䜛䛣䛸䛜㔜せ䛷䛒䜛䠊䛭䛣䛷䠈SF6 䜘䜚䜒⤯⦕ᛶ䛜ప䛟䠈䝥䝷䝈䝬㡿ᇦ䛜ᗈ䛜䜚䜔䛩䛔 CF4 䜢཯ᛂ䜺䝇䛸䛧䛶⏝䛔䛯䠊CF4 䜢⏝䛔䛯䝥䝷䝈䝬䜶䝑䝏䞁䜾䛻䛚䛔䛶䠈ศゎ䛥䜜䛯Ⅳ⣲䛜䝃䞁䝥䝹㠃ୖ䛻௜╔䛩䜛䛣䛸䜢㜵䛠Ⅽ䠈O2 䛾ᑟධ䛜᭷ຠ䛷䛒䜛䛣䛸䛜▱䜙䜜䛶䛔䜛 [63]䠊✀䚻䛾⃰ᗘ䜢ヨ䛧䛯⤖ᯝ䠈CF4 䛸 O2 䛾⃰ᗘ䜢䛭䜜䛮䜜 1%䠈2%䛸䛩䜛䛣䛸䛷Ᏻᐃ䛺䝥䝷䝈䝬䛾⏕ᡂ䛻ᡂຌ䛧䛯䠊䝥䝷䝈䝬䛾ᵝᏊ䜢 Fig. 3.16 䛻♧䛩䠊㟁ᴟ䛾䝔䞊䝟䞊㠃䛸⤖ᬗ䛾䝔䞊䝟䞊㠃䛸䛾ᖹ⾜ᛶ䛜ᝏ䛟䠈୍ᣓ䛷䛾䝔䞊䝟䞊㠃඲㠃ຍᕤ䛿ᅔ㞴䛷䛒䛳䛯䠊㟁ᴟ䛾 z ఩⨨䜢ኚ䛘䜛䛣䛸䛷ຍᕤ㡿ᇦ䛾ไᚚ䛜ྍ⬟䛷䛒
䛳䛯Ⅽ䠈㝶᫬㟁ᴟ䛾 z ఩⨨䜢ㄪᩚ䛩䜛䛣䛸䛷䠈䝔䞊䝟䞊㠃඲㠃䛾 PCVM ຍᕤ䜢ᐇ⌧䛧䛯䠊䝔䞊䝟䞊㠃䛾 PCVM ຍᕤ䛷䛿ຍᕤ㔞䛾ぢ✚䜒䜚䛜ᅔ㞴䛷䛒䜚䠈䝔䞊䝟䞊㠃䛾ຍᕤኚ㉁ᒙ䛜㝖ཤ䛥䜜䛯஦䜢♧䛩ᇶ‽䛜ᚲせ䛸䛺䜛䠊䛣䛣䛷䝔䞊䝟䞊㠃䛾ᖹ⁥ᛶ䛻╔┠䛧䛯䠊๓⠇䛷䛾グ㏙䛾㏻䜚䠈
PCVM ຍᕤ䛷䛿⤖ᬗᛶ䛜኱䛝䛟஘䜜䛯㠃䜢ຍᕤ䛧䛯㝿ᖹ⁥ᛶ䛾ᨵၿ䛿ぢ䜙䜜䛪䠈䛭䛾䜘䛖䛺஘䜜䛜ྲྀ䜚㝖䛛䜜䛯ᚋ䛻ᖹ⁥ᛶ䛜ྥୖ䛩䜛䠊ᚑ䛳䛶䠈ຍᕤ๓䛸ẚ䜉༑ศᖹ⁥ᛶ䛾㧗䛔䝔䞊䝟䞊㠃䛜ᚓ䜙䜜䛶䛔䜜䜀䠈ຍᕤኚ㉁ᒙ䛾㝖ཤ䛜᏶஢䛧䛶䛔䜛䛸⪃䛘䜙䜜䜛䠊䝔䞊䝟䞊㠃䛾 PCVM ຍᕤ๓ᚋ䛾෗┿䜢 Fig. 3.17 䛻♧䛩䠊ຍᕤ๓䛿㠀ᖖ䛻⢒䛔䝔䞊䝟䞊㠃䛜䠈PCVM ຍᕤ䛻䜘䛳䛶㙾㠃䛻䜎䛷ᖹ⁥ᛶ䛜ྥୖ䛧䛶䛚䜚䠈ຍᕤኚ㉁ᒙ䛿᏶඲䛻㝖ཤ䛥䜜䛯䛸⪃䛘䜙䜜䜛䠊䛯䛰䛧䠈䝔䞊䝟䞊㠃䛸ⷧ䛔㡿ᇦ䛸䛾᥋⥆㡿ᇦ䛾ຍᕤኚ㉁ᒙ㝖ཤ䛜㐩ᡂ䛥䜜䛶䛔䜛䛛䛿᫂䜙䛛䛷䛿䛺䛟䠈ู㏵ᒁᅾ໬䝥䝷䝈䝬䛾㉮ᰝ䛻䜘䜛ฎ⌮䛜ᚲせ䛷䛒䜛䠊ᮏᡭἲ䛿䠈ⷧ䛔㡿ᇦ䛾┤ᚄ 5 mm䠈䝔䞊䝟䞊ゅ 20°䛾⤖ᬗ䛻ᑐ䛧䛶䛿ᴟ䜑䛶᭷ຠ䛷䛒䛳䛯䜒䛾䛾䠈ศ๭䞉㐜ᘏගᏛ⣔䜈䛾฼⏝䜢๓ᥦ䛸䛧䛶〇స䛧䛯┤ᚄ 6 mm䠈䝔䞊䝟䞊ゅ 15°䛾⤖ᬗ䛻ᑐ䛧䛶䛿䠈䝔䞊䝟䞊㠃඲㠃䛾ᆒ୍ຍᕤ䛿ᅔ㞴䛷䛒䛳䛯䠊䛣䜜䛿䠈䝔䞊䝟䞊㠃✚䛾ᣑ኱䜔㟁ᴟ䛾ഴ䛝䛻䜘䜛䝥䝷䝈䝬䛾೫ᅾ໬䛜ཎᅉ䛷䛒䜚䠈᭷ຠ䛺ゎỴ⟇䛜ぢ䛴䛡䜙䜜䛺䛛䛳䛯䠊䜎䛯䠈䝔䞊䝟䞊㠃䛾୍ᣓฎ⌮᫬䠈཯ᛂ⏕ᡂ≀䛾ⷧ䛔㡿ᇦ䜈䛾෌௜╔䜢㜵䛠Ⅽ䠈10 slm 䛸䛔䛖኱ὶ㔞䛷཯ᛂ䜺䝇䜢ᑟධ䛧䛯䠊䛭䛾⤖ᯝⷧ䛔㡿ᇦ䜈䛾෌௜╔䛾ᢚไ䠈䝔䞊䝟䞊㠃䛾ຍᕤ᫬㛫䛾▷⦰䜈䛸䛴䛺䛜䛳䛯䛜䠈ಖᣢ㡿ᇦୖ䜈䛾෌௜╔䛜☜ㄆ䛥䜜䛯䠄Fig. 3.17b䠈Fig. 3.19a䠅䠊☜ㄆ䛿䛸䜜䛶䛔䛺䛔䜒䛾䛾䠈䛣䛾෌௜╔ᒙ䛿䝅䝸䝁䞁䛸䛾⇕⭾ᙇ⋡䛾㐪䛔䛻䜘䜛⭷ᛂຊ䜢Ⓨ⏕䛥䛫䠈ṍ䜏䛾せᅉ䛸䛺䜚ᚓ䜛䠊௨ୖ䛾ၥ㢟䜢ゎỴ䛩䜛Ⅽ䠈ඛ➃ᚄ 1.2 mm 㟁ᴟ䜢⏝䛔䠈ᒁᅾ໬䝥䝷䝈䝬䜢ྠᚰ෇㉮ᰝ䛥䛫䜛䛣䛸䛷䠈䝔䞊䝟䞊㠃䛾ຍᕤኚ㉁ᒙ㝖ཤ䜢ヨ䜏䛯䠄Fig. 3.18䠅䠊䛭䛾⤖ᯝ䠈Fig. 3.19b 䛻♧䛩䜘䛖䛻䠈ಖᣢ㡿ᇦ䜈䛾㐣๫䛺཯ᛂ๪⏕ᡂ≀䛾௜╔䜢ᢚไ䛩䜛䛣䛸䛻ᡂຌ䛧䛯䠊䛣䛾㟁ᴟ㉮ᰝᆺ䝔䞊䝟䞊㠃ຍᕤ䛷

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.18.

45

Conceptual image of the electrode-scanning method for removing crystal
strains on tapered surface.

Fig. 3.19.

Pictures of thin crystals with different removal methods for treating tapered

surface. Crystals treated with the initial method (a) and the electrode-scanning method (b).

䛿䠈䝔䞊䝟䞊㠃䛸ⷧ䛔㡿ᇦ䛸䛾᥋⥆㡿ᇦ䜒ྠ୍䝥䝻䝉䝇ෆ䛷ฎ⌮䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊䝥䝻䝉䝇᫬㛫⮬య䛿ቑ኱䛩䜛䜒䛾䛾䠈1 䝞䝑䝏ෆ䛷⾜䛘䜛䛣䛸䛛䜙䠈䝟䞊䝆⏝䜺䝇䛾⠇⣙䛻䜒䛴䛺䛜䜛䠊

3.3.2.3⿬㠃ຍᕤ⿬㠃 PCVM ຍᕤ䛾ヲ⣽䜢♧䛩䠊๓㏙䛾㏻䜚䠈CMP 㠃䛷䛒䜛⿬㠃䛻䛚䛔䛶䜒ከᩘ䛾䝇䜽䝷䝑䝏䠈Ḟ㝗䛜☜ㄆ䛥䜜䠈⤖ᬗ䛾ཌ䜏䛜ⷧ䛟䛺䛳䛯㝿䛻῝้䛺᱁Ꮚ㠃䛾ṍ䜏䜢䜒䛯䜙䛩䠄Fig. 3.14a䠅䠊⿬㠃䛻ᑐ䛧䛶 PCVM ຍᕤ䜢᪋䛩䛣䛸䛷䠈Fig. 3.14b 䛾䜘䛖䛻䠈ⷧ䛔⤖ᬗ䛾ᅇᢡ≉ᛶ䜢๻ⓗ䛻ྥୖ䛥䛫䜛䛣䛸䛻ᡂຌ䛧䛯䠊䛣䛾⤖ᬗ䛾ሙྜ䠈ⷧ໬ᚋ䛻⿬㠃 PCVM ຍᕤ䜢᪋䛧䛯䛜䠈ຍᕤ䛾ᆒ୍ᛶ䜢ಖ䛴䛣䛸䛜ᅔ㞴䛷䛒䜛䛯䜑䠈ⷧ໬๓䛻⾜䛖䛣䛸䛜ᮃ䜎䛧䛔䠊➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

46

Fig. 3.20.

Effect of surface flattening for realizing uniform PCVM process on the rearsurface. (a) Typical surface profile on the thin part of an as-received crystal and (b) the
profile on the rear surface after a PCVM process. (c) Example of surface profile on the thinpart after flattening with PCVM and (d) the profile on the rear surface.

⿬㠃 PCVM ຍᕤ䛻䛿䠈✵Ẽᒙ䜢ᇙ䜑䜛Ⅽ䛾 Al 䝇䝨䞊䝃䞊䛾฼⏝䛜୙ྍḞ䛷䛒䜛䠊䛣䜜䛿✵Ẽᒙ䛜䝁䞁䝕䞁䝃䞊䛸䛧䛶ᶵ⬟䛩䜛䛣䛸䛷䠈⤖ᬗ⾲㠃䛾㟁఩䛜୙ᆒ୍䛸䛺䜚䠈䝥䝷䝈䝬䛜୙Ᏻᐃ䛸䛺䜛Ⅽ䛷䛒䜛䠊๓ຍᕤᚋ䛾⤖ᬗ䛿ⷧ䛔㡿ᇦ䛻 20–30 µm 䛾㧗పᕪ䜢᭷䛧䛶䛔䜛䠄Fig. 3.20a䠅䠊䛭䛾䜘䛖䛺⤖ᬗ䛻ᑐ䛧䛶⿬㠃 PCVM ຍᕤ䜢᪋䛩䛸䠈䝇䝨䞊䝃䞊䜢⏝䛔䛯䛸䛧䛶䜒 Fig. 3.20b 䛾䜘䛖䛻⿬㠃䛾ᖹᆠᛶ䛜ⴭ䛧䛟ᝏ໬䛧䠈ᅇᢡ≉ᛶ䛻ᑐ䛧䛶䜒ᝏᙳ㡪䜢ཬ䜌䛩䠊ⷧ䛔㡿ᇦ䜢ᖹᆠ໬䛧䛯ୖ䛷⿬㠃 PCVM ຍᕤ䜢⾜䛖䛣䛸䛷䛣䛾ၥ㢟䜢ゎỴ䛧䛯䠊ᖹᆠ໬ᚋ䛾⾲㠃ᙧ≧䛸䛭䛾㝿䛾⿬㠃ຍᕤᚋᙧ≧䜢 Fig. 3.20c䠈d 䛻♧䛩䠊⿬㠃䛾ᖹᆠᛶ䛜ᨵၿ䛥䜜䛶䛔䜛䛣䛸䛜᫂䜙䛛䛷䛒䜛䠊䛣䛾䝥䝻䝉䝇䛾ᑟධ䛻䜘䜚ᴟⷧ⤖ᬗ䛻ᑐ䛧䛶䜒㧗䛔ᅇᢡ≉ᛶ䜢ᚓ䜛䛣䛸䛜ྍ⬟䛸䛺䛳䛯䠊⤖ᬗ Type I 䛻䛚䛔䛶䠈⿬㠃䛾ᖹᆠᛶ䛿ⷧ䛔㡿ᇦ䛾ᖹᆠᛶ䛻ᙉ䛟౫Ꮡ䛩䜛䠊䜎䛯䠈䝇䝨䞊䝃䞊䛾䜶䝑䝆㒊䛻䛚䛔䛶㟁⏺㞟୰䛜⏕䛨䛶䛚䜚䠈⿬㠃䛾ᖹᆠ㡿ᇦ࿘㎶䛻䛚䛔䛶኱䛝䛺ຍᕤ㏿ᗘ䛾ቑ኱䛜

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇47☜ㄆ䛥䜜䜛䠊䛣䛾䜘䛖䛺⾲㠃ᙧ≧䛻䜘䛳䛶ᴟⷧ⤖ᬗ䛾᭷ຠศ๭㡿ᇦ䛿᭦䛻ไ㝈䛥䜜䜛䠊ᖹᯈ⤖ᬗ䛛䜙 PCVM ຍᕤ䛾䜏䛻䜘䛳䛶ⷧ໬䛩䜛⤖ᬗ Type II 䛻䛚䛔䛶䝇䝨䞊䝃䞊䛿ᚲせ䛺䛟䠈䛣䜜䜙䛾ၥ㢟䛿඲䛶ゎỴ䛥䜜䠈ᴟ䜑䛶ᖹᆠᛶ䛾㧗䛔⿬㠃ᙧ≧䜢ᚓ䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊

3.3.2.4ⷧ໬ຍᕤ┠ⓗཌ䜏䜈䛾ⷧ໬䛿䠈➼㏿䝷䝇䝍䞊㉮ᰝ䛻䜘䜛⢒䛔ⷧ໬䛸䠈㉮ᰝ㏿ᗘ䜢ไᚚ䛧䛯⢭ᐦཌ䜏ᆒ୍໬䛾 2 ẁ㝵䛻䜘䛳䛶⾜䛳䛯䠊䛭䛾㝿䠈ᖖ䛻⾲㠃≉ᛶ䜢ᝏ໬䛥䛫䛺䛔䜘䛖ᚲせ᭱ప㝈䛾ᢞධ㟁ຊ䛻䛚䛔䛶ຍᕤ䜢⾜䛖Ⅽ䠈ⷧ໬ຠ⋡䛿䝥䝷䝈䝬䛾኱䛝䛥䛻౫Ꮡ䛩䜛䠊⬟⋡ⓗ䛻ⷧ໬䜢⾜䛖Ⅽ䠈➼㏿䝷䝇䝍䞊㉮ᰝ䛿ඛ➃ᚄ 1.2 mm 䛾㟁ᴟ䜢⏝䛔䛶⾜䛔䠈⢭ᐦཌ䜏ᆒ୍໬䛻䛚䛔䛶䛿ඛ➃ᚄ 0.3 mm 䛾㟁ᴟ䜢⏝䛔䛶䠈๓⠇䛷⤂௓䛧䛯䜘䛖䛺㉸ᒁᅾ໬䝥䝷䝈䝬䜢Ⓨ⏕䛥䛫䛯䠊⤖ᬗ䛾ཌ䜏ศᕸ䜢ไᚚ䛩䜛Ⅽ䛻䛿䠈ṇ☜䛺ཌ䜏ศᕸ䜢▱䜛ᚲせ䛜䛒䜛䠊ཌ䜏ศᕸ䛿ᗈᖏᇦ㉥እᖸ΅ศගィ䠄KEYENCE䠈SI-F80R䠅䛸 2 ḟඖไᚚ⣔䠄KEYENCE䠈KS-1100䠅䛸䜢⤌䜏ྜ䜟䛫䛯䝅䝇䝔䝮䜢⏝䛔䛶 ᐃ䛧䛯䠊ᐃ䛾ᶓศゎ⬟䛿䝥䝻䞊䝤䝺䞊䝄䞊䛾䝇䝫䝑䝖ᚄ䛻䜘䛳䛶Ỵᐃ䛥䜜䠈⣙ 50µm 䛷䛒䜛䠊ᮏ䝅䝇䝔䝮䛿䝅䝸䝁䞁䛻ᑐ䛧䛶 7–300 µm 䛾ᐃ⠊ᅖ䜢᭷䛧䛶䛚䜚䠈䝍䞊䝀䝑䝖䛷䛒䜛 10µm 䜢༑ศ䛻䜹䝞䞊䛧䛶䛔䜛䠊ཌ䜏䛾ฟຊศゎ⬟䛿 1 nm 䛷䛒䜛䛜䠈ᒅᢡ⋡䛾ධຊ䛜ᚲせ䛷䛒䜛䛣䛸䜔ಙྕఏ㐩䛾㝿䛻ㄗᕪ䛜஌䜛䛣䛸䠈⾲㠃ᙧ≧䛻ᙳ㡪䜢ཷ䛡䜛➼䛾⌮⏤䛻䜘䜚䠈⤯ᑐ⢭ᗘ䛸䛧䛶䛿
0.05–0.1 µm 䛸䛺䜛䠊䜎䛯䠈ᖹᆠᛶ䛜㧗䛟䛺䛡䜜䜀ṇ☜䛺ᐃ䛜㞴䛧䛟䠈ฟຊ䝕䞊䝍䛻䛿ከ䛟䛾䝜䜲䝈䛜⏕䛨䜛䠊ᮏ◊✲䛷䛿䠈㉮ᰝᆺⓑⰍᖸ΅ィ䛻䜘䛳䛶 ᐃ䛧䛯⾲㠃ᙧ≧䛸⤌䜏ྜ䜟䛫䛯ཌ䜏ᑟฟ᪉䜢⪃᱌

Fig. 3.21.

Example of measured thickness distribution. (a) Distribution measured by a

combination of a broadband IR spectro-interferometer (SI-F80R) with a Michelson-type
interferometer (NewView 200HR), and (b) only by SI-F80R.

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇48

䛧䛯䠊㉮ᰝᆺⓑⰍᖸ΅ィ䛿㧗䛔ᶓ䠈⦪ศゎ⬟䜢᭷䛧䠈ẚ㍑ⓗᛴᓧ䛺ᙧ≧䛷䜒䛧䠈ᐃྍ⬟䛷䛒䜛䠊䛧䛛ᐃᑐ㇟䛿䛒䛟䜎䛷⾲㠃䛷䛒䜚䠈ヨᩱ䛾ഴ䛝䛺䛹䛾ᙳ㡪䜢㢧ⴭ䛻ཷ䛡䜛䠊䛣䛣䛷䠈⿬㠃䛿༑ศ䛺ᖹᆠᛶ䜢᭷䛧䛶䛔䜛Ⅽ䠈ཌ䜏ศᕸ䛿⾲㠃ᙧ≧䛸㧗䛔┦㛵䜢♧䛩䠊ᚑ䛳䛶㉥እศගᖸ΅ィ䛻䜘䜚ᐃ䛧䛯ཌ䜏ศᕸ䜢⏝䛔䛶⾲㠃ᙧ≧䛾ഴᩳ⿵ṇ䜢⾜䛔䠈┦ᑐ㧗䛥䜢⤯ᑐཌ䜏䜈䛸↝䛝┤䛩䛣䛸䛜ྍ⬟䛷䛒䜛䠊ᥦ᱌ᡭἲ䛻䜘䜚ᑟฟ䛧䛯ཌ䜏ศᕸ䛸㉥እᖸ΅ศගィ䛻䜘䜚 ᐃ䛧䛯ཌ䜏ศᕸ䛸䛾ẚ㍑䜢 Fig.
3.21 䛻♧䛩䠊୧⪅䛾䝥䝻䝣䜯䜲䝹䛿Ⰻ䛟୍⮴䛧䛶䛚䜚䠈ᥦ᱌ᡭἲ䛻䜘䛳䛶䜘䜚㧗䛔✵㛫ศゎ⬟䠈䜘䜚ᗈ䛔ᐃ⠊ᅖ䛜ᐇ⌧䛧䛯䠊䜎䛯䠈䝕䞊䝍䛾䝜䜲䝈䜒ᑡ䛺䛟䠈༑ศ㏿ᗘศᕸᑟฟ䛻฼⏝ྍ⬟䛺ཌ䜏ศᕸ䛾ᑟฟ䛻ᡂຌ䛧䛯䠊䛣䛾ᐃᡭἲ䛻䛚䛔䛶䠈⾲㠃ᙧ≧ᐃ᫬䛻ヨᩱ䛾㠃ෆᅇ㌿䛜ຍᕤ䝇䝔䞊䝆㍈䛸୍⮴䛩䜛ᚲせ䛜䛒䜛䠊ᡃ䚻䛿䠈ຍᕤ䝇䝔䞊䝆ᇶ‽䛷┦ᑐ఩⨨䛾᪤▱䛺ಖᣢ㡿ᇦୖ䛾 3 ⟠ᡤ䛻ຍᕤ⑞䝇䝫䝑䝖䜢ᡴ䛴䛣䛸䛷䛣䛾ㄢ㢟䜢ඞ᭹䛧䛯䠊䛣䛾䝇䝫䝑䝖䛻䜘䜚ᐃ㡿ᇦ䛸䛾┦ᑐ఩⨨䜒Ỵᐃ䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛

Ⅽ䠈఩⨨ㄗᕪ䛻䜘䜛ຍᕤ⢭ᗘ䛾పୗ䜒㜵䛠䛣䛸䛜ྍ⬟䛷䛒䜛䠊ᐃ䛧䛯ཌ䜏ศᕸ䜢⏝䛔䛶䝥䝷䝈䝬䛾㉮ᰝ㏿ᗘศᕸ䜢ィ⟬䛧䠈ཌ䜏ᆒ୍໬䜢⾜䛖䠊ᗄᗘ䛛⧞䜚㏉䛩䛣䛸䛷㧗䛔ཌ䜏ᆒ୍ᛶ䜢ᚓ䜛䠊ᐇ㝿䛿┠ⓗཌ䜏䜘䜚䜒ẚ㍑ⓗ኱䛝䛺ཌ䜏䜢᭷䛧䛶䛔䜛᫬䛻ཌ䜏䛾ᆒ୍໬䜢⾜䛔䠈➼㏿㉮ᰝ䛻䜘䛳䛶ཌ䜏䛾ᚤㄪᩚ䜢⾜䛳䛯䠊䛣䜜䛻䜘䜚౑⏝䛧䛯⿦⨨䛾ᐃ⠊ᅖ௨ୗ䛾ཌ䜏䜢᭷䛩䜛⤖ᬗ䜒స〇ྍ⬟䛸䛺䜛䠊PCVM 䛾ຍᕤ⢭ᗘ䛿ㄗᕪ 2%⛬ᗘ䛷䛒䜛䛯䜑䠈➼㏿㉮ᰝ䛻䜘䛳䛶 5 µm 㝖ཤ䛧䛯䛸䛧䛶䜒䠈100 nm ௨ୗ䛾ㄗᕪ䛧䛛⏕䛨䛺䛔䛯䜑ၥ㢟䛺䛔䠊௨ୖ䠈ຍᕤᡭ㡰䜢 Fig. 3.22 䛻䜎䛸䜑䜛䠊ᮏᡭἲ䛻䜘䜚᭱⤊ⓗ䛻ᚓ䜙䜜䜛᭷ຠศ๭㡿ᇦ䛾኱䛝䛥䛿㉮ᰝᆺⓑⰍᖸ΅ィ䛾ᐃྍ⬟⠊ᅖ䛻ไ㝈䛥䜜䜛䠊⤖ᬗ Type I 䛾ሙྜ䠈ⷧ䛔㡿ᇦ䛸䝔䞊䝟䞊㠃䛸䛾ቃ⏺㡿ᇦ䛻䛚䛔䛶䛿䠈ᛴ⃭䛺⾲㠃ᙧ≧䛾ኚ໬䛻䜘䜚䝥䝷䝈䝬䛜୙Ᏻᐃ䛸䛺䜛䠊䛭䛾⤖ᯝᖸ΅ィ䛷䛿 ᐃ୙ྍ⬟䛺⾲㠃䛾ഴ䛝䛜⏕䛨䠈᭱⤊ⓗ䛺ᐃྍ⬟⠊ᅖ䛿~ 3 mm ゅ䛸䛺䜛䠊ᐃ⠊ᅖ䛾䜶䝑䝆

࿘㎶䜒 Fig. 3.21a 䛾䜘䛖䛻ᛴᓧ䛺ᙧ≧䜢᭷䛧䛶䛔䜛Ⅽ䠈ཌ䜏䛾ᆒ୍໬䛿ᅔ㞴䛷䛒䜚䠈᭷ຠ㡿ᇦ䛿᭦䛻ไ㝈䛥䜜䜛䠊⤖ᬗ Type II 䛾ሙྜ䛿ⷧ໬㡿ᇦ䛾኱䛝䛥䜢⮬⏤䛻タᐃ䛷䛝䜛Ⅽ䠈7 mm × 3 mm 䛸䛔䛳䛯ᗈ䛔᭷ຠ㡿ᇦ䛜ᐇ⌧ྍ⬟䛷䛒䜛䠊䛯䛰䛧䠈䛭䛾䜘䛖䛺ᗈ䛔㡿ᇦ䜢⣙ 600 µm 㝖ཤ䛩䜛Ⅽ䛻䛿㠀ᖖ䛻ከ䛟䛾᫬㛫䛸ປຊ䜢せ䛩䜛䠊

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.22.

Flow chart of PCVM processes for fabricating thin crystals.

49➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

50

3.3.3 ຍᕤ⤖ᯝ䛸⤖ᬗᛶホ౯㻌ᮏ⠇䛻䛚䛔䛶䠈స〇䛧䛯ྛ✀䝃䞁䝥䝹䛾ຍᕤ⤖ᯝ䛸 SPring-8 䛾 1 km 䝡䞊䝮䝷䜲䞁 BL29XUL[64] 䛻䛚䛔䛶ᐇ᪋䛧䛯⤖ᬗᛶホ౯⤖ᯝ䜢♧䛩䠊䝃䞁䝥䝹䝸䝇䝖䜢 Table 3.2 䛻♧䛩䠊⤖ᬗᛶホ౯䛾䛯䜑䛻䠈䠄 +, −, −, + 䠅䛻㓄⨨䛧䛯 2 䛴䛾 Si(444) 䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䠄CC䠅䜢฼⏝䛧䛯䝉䝑䝖䜰䝑䝥䛸䠈ྠ⤖ᬗ㠃䛾䝁䝸䝯䞊䝍⤖ᬗ䛸䝃䞁䝥䝹⤖ᬗ䛸䜢䠄 +, − 䠅䛻㓄⨨䛧䛯䝉䝑䝖䜰䝑䝥䛸䛾 2 ✀㢮䛾ᐇ㦂㓄⨨䜢⏝䛔䛯䠊๓⪅䛻䛚䛔䛶䠈2 䛴䛾 Si(444) CC 䛾฼⏝䜔䠈X ⥺䜢 1 km ఏ᧛䛥䛫䝇䝸䝑䝖䛷䝡䞊䝮䝃䜲䝈䜢ไ㝈䛩䜛䛣䛸䛷䠈㧗䛔༢Ⰽᛶ䠈ᖹ⾜ᛶ䜢᭷䛩䜛 X ⥺䝥䝻䞊䝤䛜䝃䞁䝥䝹⤖ᬗ䜈䛸ධᑕ䛥䜜䜛䠊㧗ឤᗘ䛺ホ౯䛜ྍ⬟䛷䛒䜚䠈ⷧ䛔⤖ᬗ䛾䝻䝑䜻䞁䜾䜹䞊䝤䛻⌧䜜䜛䝣䝸䞁䝆ᵓ㐀䠄Pendellösung fringe䠅䜒ゎീ䛥䜜䠈ཌ䜏䛾ホ౯䜒⾜䛖䛣䛸䛜ฟ᮶䜛䠊ᚋ⪅䛿⤖ᬗᛶホ౯䛻ᗈ䛟฼⏝䛥䜜䛶䛔䜛㓄⨨䛷䛒䜚䠈䠄 +, − 䠅ᖹ⾜㓄⨨䛻䜘䛳䛶ศᩓ䠄䝞䞁䝗ᖜ䠅䛾ᙳ㡪䜢ᢚไ䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊ヲ⣽䛿௜㘓 A 䛻♧䛩䠊䛭䜜䛮䜜䛾䝉䝑䝖䜰䝑䝥䛻䛚䛔䛶཯ᑕ X ⥺䝖䝫䜾䝷䝣䛸䝻䝑䜻䞁䜾䜹䞊䝤䜢⾜䛳䛯䠊䜎䛯䠈SM03–08 䛻ᑐ䛧䛶䛿䠈ᵝ䚻䛺ゅᗘ䛻䛚䛔䛶ᐃ䛧䠈⤖ᬗᛶ䛾ホ౯䜢ᐃ䛧䛯䝖䝫䜾䝷䝣䜢⏝䛔䛶䝢䜽䝉䝹ẖ䛾䝻䝑䜻䞁䜾䜹䞊䝤䜢ᑟฟ䛧䠈್༙ᖜศᕸ䛸୰ᚰゅศᕸ䜢ྲྀᚓ䛧䛯䠊
PCVM 䛻䜘䜛ᴟⷧ⤖ᬗస〇䛾᭷ຠᛶ䜢♧䛩Ⅽ䠈3 䛴䛾ᴟⷧ⤖ᬗ䠄SM01–03䠅䜢స〇䛧䛯䠊䛣䛣䛷䠈SM01 䛾䝔䞊䝟䞊ゅ䛿 20°䠈๓ຍᕤᚋ䛾ⷧ䛔㡿ᇦ䛿┤ᚄ 5 mm 䛷䛒䜛䠊䛭䛧䛶ศ๭䞉㐜ᘏගᏛ⣔䛻౑⏝䛩䜛䛯䜑䛾⤖ᬗ䛸䛧䛶䠈䛣䜜䜎䛷 5 䛴䛾 Si(220) ⤖ᬗ䠄SM04–08䠅䜢స〇䛧䛶䛝䛯䠊SM04䠈05 䛾䝔䞊䝟䞊ゅ䛿 15°䠈๓ຍᕤᚋ䛾ⷧ䛔㡿ᇦ䛿┤ᚄ 6 mm 䛷䛒䜛䠊௨ୗ䠈PCVM ຍᕤᚋ䛾ཌ䜏ศᕸ䠈⤖ᬗᛶホ౯⤖ᯝ䜢 Fig. 3.23–30 䛻♧䛩䠊

Table 3.2.

List of samples and evaluation conditions.

CrystalSamplehkl

Thickness

Setup

E0

θB

designSM01

Type I440< 7 µmw/ Si(444) CC

9.13 keV

45.0°

SM02

Type II333~ 20 µm

w/ Si(444) CC

8.39 keV

45.0°

SM03

Type II422~ 14 µm

w/ Si(444) CC

8.70 keV

40.0°

SM04

Type I220~ 10 µm( + , −)

10.0 keV

18.8°

SM05

Type I220~ 10 µm( + , −)

10.0 keV

18.8°

SM06

Type II220~ 10 µm( + , −)

10.0 keV

18.8°

SM07

Type II

220~ 12 µm( + , −)

10.0 keV

18.8°

SM08

Type II

220~ 12 µm( + , −)

10.0 keV

18.8°

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.23.

Results of SM01. (a) Surface profile on the thin part and (b) measured rocking

curves with Si(440) diffraction plane. (c)–(m) Reflection topographs at various rotation
angles. Green rectangular area represents the X-ray illumination area during the rocking
curve measurement.

51

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇52

Fig. 3.24.

Results of SM02. (a) Thickness distribution and (b) measured rocking curves

with Si(333) diffraction plane. (c)–(i) Reflection topographs at various rotation angles.
Green rectangular area represents the X-ray illumination area during the rocking curvemeasurement.

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.25.

Results of SM03. (a) Thickness distribution and (b) measured rocking curves

with Si(422) diffraction plane. (c) Reflection topograph on near the exact Bragg condition.
Distributions of FWHM (d) and central angle (e) of rocking curves calculated from
topographs taken at various rotation angles.

53➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

54

Fig. 3.26.

Results of SM04. (a) Thickness distribution and (b) measured rocking curves

with Si(220) diffraction plane. (c) Reflection topograph on near the exact Bragg condition.
Distributions of FWHM (d) and central angle (e) of rocking curves calculated from
topographs taken at various rotation angles.

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.27.

Results of SM05. (a) Thickness distribution and (b) measured rocking curves

with Si(220) diffraction plane. (c) Reflection topograph on near the exact Bragg condition.
Distributions of FWHM (d) and central angle (e) of rocking curves calculated from
topographs taken at various rotation angles.

55➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

56

Fig. 3.28.

Results of SM06. (a) Thickness distribution and (b) measured rocking curves

with Si(220) diffraction plane. (c) Reflection topograph on near the exact Bragg condition.
Distributions of FWHM (d) and central angle (e) of rocking curves calculated from
topographs taken at various rotation angles.

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.29.

Results of SM07. (a) Thickness distribution and (b) measured rocking curves

with Si(220) diffraction plane. (c) Reflection topograph on near the exact Bragg condition.
Distributions of FWHM (d) and central angle (e) of rocking curves calculated from
topographs taken at various rotation angles.

57➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

58

Fig. 3.30.

Results of SM08. (a) Thickness distribution and (b) measured rocking curves

with Si(220) diffraction plane. (c) Reflection topograph on near the exact Bragg condition.
Distributions of FWHM (d) and central angle (e) of rocking curves calculated from
topographs taken at various rotation angles.

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇59

SM01 䛿ཌ䜏 10 µm ௨ୗ䛻䛚䛔䛶䠈ึ䜑䛶⌮᝿ⓗ䛺㧗ḟ䛾 Bragg ᅇᢡ䛻ᡂຌ䛧䛯⤖ᬗ䛷䛒䜛䠊᫂░䛺 Pendellösung 䝣䝸䞁䝆䛜ほᐹ䛷䛝䠈䝣䜱䝑䝔䜱䞁䜾䛻䜘䜚ཌ䜏䛿 6.4 µm 䛷䛒䜛䛣䛸䛜☜ㄆ䛥䜜䛯䠊䜎䛯䠈SM02䠈SM03 䛿ᗈ䛔᭷ຠศ๭㡿ᇦ䜢᭷䛧䛶䛚䜚䠈⤖ᬗ Type II 䛾᭷ຠᛶ䛜♧䛥䜜䛯䠊䝻䝑䜻䞁䜾䜹䞊䝤䛾ゅᗘᖜ䛿⤖ᬗ᏶඲ᛶ䛰䛡䛷䛺䛟ཌ䜏䛻䜒౫Ꮡ䛩䜛䠊SM03 䛻䛚䛔䛶⤖ᬗ䛾ཌ䜏ศᕸ䛸Ⰻ䛟┦㛵䛾䛸䜜䛯ゅᗘᖜศᕸ䛜☜ㄆ䛥䜜䠄Fig. 3.25d䠅䠈㧗䛔⤖ᬗ᏶඲ᛶ䜢᭷䛧䛶䛔䜛䛣䛸䛜♧䛥䜜
䛯䠊SM03 䛿 Roseker 䜙䛾䜾䝹䞊䝥䛻ᥦ౪䛥䜜䛶䛔䜛䠊SM04–08 䛿ศ๭䞉㐜ᘏගᏛ⣔䜈䛾฼⏝䛻ྥ䛡䛶స〇䛥䜜䛯⤖ᬗ䛷䛒䜛䠊SM04䠈05 䛿 SPring-8
䛻䛚䛡䜛ගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂䛻౑⏝䛥䜜䛯⤖ᬗ䛷䛒䜚䠈SM01 䜘䜚䜒ᗈ䛔᭷ຠศ๭㡿ᇦ䜢᭷䛧䛶䛔䜛䠊䛧䛛䛧䠈Si(220) ᅇᢡ䛾 Bragg ゅ䛿チᐜἼ㛗⠊ᅖ䛻䛚䛔䛶⣙ 20°䛸ᑠ䛥䛟䠈᭦䛺䜛᭷ຠ㡿ᇦ䛾ᣑ኱䛜୙ྍḞ䛷䛒䛳䛯䠊⤖ᬗ Type I 䛻䛚䛔䛶䛣䜜௨ୖ䛾᭷ຠ㡿ᇦ䛾ᣑ኱䛿ᅔ㞴䛷䛒䛳䛯Ⅽ䠈⤖ᬗType II 䜢᥇⏝䛧䠈᭷ຠ㡿ᇦ䛾ᣑ኱䛻ᡂຌ䛧䛯䠄SM06–08䠅䠊䛣䛣䛷䠈䝻䝑䜻䞁䜾䜹䞊䝤䛾୰ᚰゅศᕸ䛻ὀ┠䛩䜛䠊䛣䛾ศᕸ䛿᱁Ꮚ㠃䛾ഴᩳศᕸ䛻┦ᙜ䛧䛶䛚䜚䠈཯ᑕ X ⥺䛾Ⓨᩓ䠈཰⦰䜢⏕䛨䛥䛫䜛せᅉ䛸䛺䜛䠊ᐃ䛥䜜䛯ศᕸ䛿ཌ䜏ศᕸ䠄=⾲㠃ᙧ≧䠅䛸䛾㛫䛻┦㛵䜢♧䛧䛯䠊X ⥺䛾ධᑕ㠃䛿ᖹᆠᛶ䛾㧗䛔⿬㠃䛸䛧䛶䛚䜚䠈䜎䛯 10 µm 䛸䛔䛖ཌ䜏䛿 Si(220) ᅇᢡ䛻䛚䛔䛶༑ศཌ䛔䛸ゝ䛘䜛Ⅽ䠈㏱㐣ഃ䛾⾲㠃䛾㉳అ䛻཯ᑕ X ⥺䛜ᙳ㡪䜢ཷ䛡䜛䛣䛸䛿┤ឤⓗ䛻䛿᝿ീ䛧㞴䛔䠊௒ᚋ䜒ゎᯒ䜢㐍䜑䜛ᚲせ䛜䛒䜛䠊䛯䛰䛧䠈PCVM ຍᕤ䝥䝻䝉䝇䛾ᨵၿ䛻䜘䜚䠈⌧ᅾ䛷䛿 SM08 䛾䜘䛖䛻ཌ䜏ᆒ୍ᛶ䛜㧗䛟䠈㖄┤᪉ྥ䛻ᑐ䛧䛶 1 mm 䜢㉸䛘䜛᭷ຠศ๭㡿ᇦ䜢᭷䛩䜛⤖ᬗ䛾స〇䛻ᡂຌ䛧䛶䛚䜚䠈ᆒ୍䛺୰ᚰゅศᕸ䠄㖄┤᪉ྥ 1 mm 䛾㡿ᇦ䛷 0.5 µrad PV ௨ୗ䠅䛜ᚓ䜙䜜䛶䛔䜛䠊

3.3.4 ᭷ຠ䛺฼⏝ἲ䛾᳨ウ㻌ᮏ㡯䛷䛿䠈ⷧ䛔⤖ᬗ䜢฼⏝䛩䜛㝿䛾 He 䝟䞊䝆䛾᭷ຠᛶ䜢♧䛩䠊⡆᫆ⓗ䛺⤖ᬗᛶホ౯䛾Ⅽ䛻኱Ẽ㞺ᅖẼୗ䛻⤖ᬗ䜢㓄⨨䛧䛶䛔䛯䛜䠈X ⥺䛾㟢ග᫬㛫䛜㛗䛟䛺䜛䛻䛴䜜཯ᑕ䝖䝫䜾䝷䝣䛻᱁Ꮚṍ䜏䛾ᙳ㡪䛜☜ㄆ䛥䜜䛯䠄Fig. 3.31䠅䠊せᅉ䛸䛧䛶䠈1) X ⥺྾཰䛻䜘䜛ᒁᡤⓗ䛺ᗘศᕸ䛾Ⓨ⏕䠈2) ୙⣧≀௜╔䛻䜘䜛⭷ᛂຊ䛾Ⓨ⏕䠈䛾 2 䛴䜢᳨ウ䛧䛯䠊ᗘ䛾ᆒ୍໬䠈⇕ఏᑟ䛾ྥୖ䜢┠ⓗ䛸䛧䛶Ỉ෭ᶵᵓ䜢ᑟධ䛧䠈኱Ẽ୰䛾୙⣧≀⃰ᗘ䜢ᢚไ䛩䜛Ⅽ⤖ᬗ㞺ᅖẼ䜢 He 䛷䝟䞊䝆ྍ⬟䛺䝃䞁䝥䝹䝩䝹䝎䜢〇స䛧䛯䠄Fig. 3.32䠅䠊✵Ẽ䜘䜚䜒⇕ఏᑟ⋡䛜㧗䛔䛣䛸䛛䜙䠈He 䝟䞊䝆䛻䜘䜚㞺ᅖẼ୰䜈䛾⇕ఏᑟ䛾ྥୖ䜒ᮇᚅ䛥䜜䜛䠊ᐇ㦂䛿䛣䜜䜎䛷䛸ྠᵝ䛻 SPring-8 BL29XUL 䛾 1 km 䝝䝑䝏䛻䛚䛔䛶⾜䛳䛯䠊䝃䞁䝥䝹⤖ᬗ䜈䛾 X ⥺ධᑕ䝣䝷䝑䜽䝇䜢ୖ䛢䜛䛯䜑䠈䝃䞁䝥䝹䜢➨ 1 ⤖ᬗ䛸䛩䜛䠄 +, − 䠅ᖹ⾜㓄⨨䜢⏝䛔䛶䠈཯ᑕ X ⥺䝖䝫䜾䝷䝣䛾⤒᫬ኚ໬䜢ほᐹ䛧䛯䠊2 ᫬㛫Ỉ෭+He 䝟䞊䝆⎔ቃୗ䛻䛚䛔䛶 X ⥺䜢↷ᑕ䛧⥆䛡䠈䛭䛾ᚋ෭༷䜢Ṇ䜑䠈䝠䞊䝍䞊➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

60

Fig. 3.31.

Transition of Si(440) reflection topograph measured with a 16.325 keV X-ray

probe. Topographs at (a) initial, (b) after 7 min, (c) 20 min, and (d) 60 min exposure. (e)Topograph after 30 min cooling (without X-ray exposure). Scale bar shows 1 mm length.
(f) Line profiles along each white dashed lines.

Fig. 3.32.

Picture of sample holder implementing water cooling and He purge
capabilities.

3.3㻌 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇

Fig. 3.33.

Transition of reflection topograph from a thin Si(440) crystal operated under

several conditions. Reflection topographs measured at operation times of 0 (a), 60 (b), 120(c), 180 (d), and 240 min (e). (f) Vertical line profiles in the white dashed lines displayedin Panels (a)–(e) as a function of operation time.

Fig. 3.34.

Measured thickness of SiO2 layer on several Si crystals.

61

62

➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇䛻䜘䛳䛶 1 ᫬㛫ᚎ䚻䛻ຍ⇕䛧䛯䠊䛭䛧䛶᭱ᚋ䛾 1 ᫬㛫䛿኱Ẽ䛻㛤ᨺ䛧䛯䠊⤖ᯝ䜢 Fig. 3.33 䛻♧䛩䠊X ⥺䛾↷ᑕ᫬㛫 30 ศ㎶䜚䛻䛚䛔䛶䝖䝫䜾䝷䝣䛾ኚ໬䛜☜ㄆ䛥䜜䛯䛜䠈䛩䛠䛻Ᏻᐃ䛧䛯䠊෭༷䜢Ṇ䜑䛯ᚋ䜒䝖䝫䜾䝷䝣䛿Ᏻᐃ䛧⥆䛡䠈኱Ẽ㛤ᨺᚋึ䜑䛶ṍ䜏䛾ᡂ㛗䛜☜ㄆ䛥䜜䛯䠊䛣䛾⤖ᯝ䛛䜙䠈ṍ䜏䛾ᡂ㛗䛿኱Ẽ୰䛻ᾋ㐟䛩䜛୙⣧≀䛜 X ⥺↷ᑕ䛻䜘䛳䛶ບ㉳䛥䜜䠈⤖ᬗ⾲㠃䛻௜╔䠈䛭䛾⭷ᛂຊ䛻䜘䛳䛶Ⓨ⏕䛧䛯䛸⪃䛘䜙䜜䜛䠊௜╔≀䛿┠䛷☜ㄆ䛩䜛䛣䛸䛿ฟ᮶䛺䛛䛳䛯䛜䠈ᡂ㛗䛧䛯ṍ䜏䛿◲㓟㐣ỈὙί䜔 HF Ὑί䜢⾜䛖䛣䛸䛷ᅇ᚟䛩䜛䛣䛸䛿☜ㄆ䛧䛶䛔䜛䠊X ⥺↷ᑕ䛻䜘䛳䛶⾲㠃㓟໬䛜㐍⾜䛩䜛䛣䛸䛜ሗ࿌䛥䜜䛶䛔䜛䛣䛸䛛䜙 [65]䠈䝅䝸䝁䞁⤖ᬗ⾲㠃䛾㓟໬⭷䜢ศග䜶䝸䝥䝋䝯䝖䝸䛻䜘䛳䛶ᐃ䛧䛯䠊ẚ㍑ᑐ㇟䛸䛧䛶䠈Ὑί┤ᚋ䛾⤖ᬗ䠈㛗᫬㛫኱Ẽ୰䛻⨨䛔䛶⮬↛㓟໬⭷䛜௜╔䛧䛶䛔䜛⤖ᬗ䠈䛭䛧䛶ྠ䛨⤖ᬗ䛾 X ⥺↷ᑕ䜢ཷ䛡䛶䛔䛺䛔㡿ᇦ䜒ྠ᫬䛻ᐃ䛧䛯䠊⤖ᯝ䜢 Fig. 3.34 䛻♧䛩䠊X ⥺䜢↷ᑕ䛧䛯㡿ᇦ䛻䛚䛔䛶䠈௚䛾䝃䞁䝥䝹䜘䜚䜒 1 nm ௨ୖཌ䛟㓟໬⭷䛜ᡂ㛗䛧䛶䛔䜛䛣䛸䛜♧၀䛥䜜䛯䠊ᐃㄗᕪ䛜኱䛝䛟䠈⤯ᑐ್䛸䛧䛶䛾ಙ㢗ᛶ䛿↓䛔䛜䠈ᑡ䛺䛟䛸䜒⾲㠃≧ែ䛿ኚ໬䛧䛶䛔䜛䛣䛸䛜☜ㄆ䛥䜜䛯䠊୙⣧≀䛾௜╔䛻䜘䜛⤖ᬗ㠃䜈䛾ṍ䜏䛾ᑟධ䛿↷ᑕ䝣䝷䝑䜽䝇䛜ቑ䛩䛻䛴䜜኱䛝䛟䛺䜛䛸⪃䛘䜙䜜䜛䛜䠈He 䝟䞊䝆䛻䜘䛳䛶ᢚไ䛜ྍ⬟䛷䛒䜚䠈XFEL➼䛾㧗㍤ᗘග※䛻䛚䛡䜛ⷧ䛔⤖ᬗ䛾฼⏝䛻䛚䛔䛶䠈ᴟ䜑䛶᭷ຠ䛷䛒䜛䛸⪃䛘䜙䜜䜛䠊

3.4 䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃䝎䝯䞊䝆㝖ཤ㻌ᮏ⠇䛻䛚䛔䛶䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃䛻Ꮡᅾ䛩䜛⤖ᬗᏛⓗ䝎䝯䞊䝆䜢㝖ཤ䛩䜛Ⅽ䛻⾜䛳䛯 PCVM ຍᕤ䛸䛭䛾ຠᯝ䛻㛵䛧䛶グ㏙䛩䜛䠊䛺䛚䠈ຍᕤ䝥䝻䝉䝇䛻㛵䛧䛶䛿ᴫ␎䛻䛸䛹䜑䠈➹⪅䛜୺యⓗ䛻⾜䛳䛯 X ⥺䛻䜘䜛ホ౯䛻㛵䛧䛶ヲ⣽䜢♧䛩䠊ෆቨ㠃䛾ᖹᆠᛶ䛿᪤Ꮡ䝥䝻䝉䝇䛻䜘䛳䛶༑ศ㐩ᡂ䛥䜜䜛䛸⪃䛘䜙䜜䜛Ⅽ䠈ᮏ䝥䝻䝉䝇䛾┠ⓗ䛿⾲㠃㏆ഐ䛻ྵ䜎䜜䜛䝎䝯䞊䝆䛾㝖ཤ䛷䛒䜚䠈ᙧ≧ಟṇ䛿⾜䜟䛺䛔䠊ᴟⷧ⤖ᬗస〇䛾⤒㦂ୖ䠈4–5 µm䛾㝖ཤ㔞䛜ᚲせ䛷䛒䜚䠈⾲㠃≉ᛶ䜢ᝏ໬䛥䛫䜛஦䛺䛟せồ㝖ཤ㔞䜢㐩ᡂ䛩䜛஦䛜ồ䜑䜙䜜䜛䠊䛭䛣䛷 Fig. 3.35 䛻♧䛩䜘䛖䛺ᴫᛕ䛾䜒䛸䠈ෆቨ㠃ຍᕤ䜢⾜䛳䛯䠊ᙧ≧ಟṇ䜢⾜䜟䛺䛔䛣䛸䛛䜙䠈1 ㍈㉮ᰝ䛻䜘䜛ຍᕤ䛜チ䛥䜜䜛䠊䛭䛣䛷෇ᰕ≧䛾ඛ➃㒊䜢᭷䛩䜛㟁ᴟ䛻䜘䛳䛶⥺≧䛾䝥䝷䝈䝬䜢Ⓨ⏕䛥䛫䛯䠊཯ᛂ䜺䝇㞺ᅖẼ୰䛷㟁ᴟ䜢ᅇ㌿䛥䛫䜛䛣䛸䛷䠈᪂㩭䛺཯ᛂ䜺䝇䜢ᖖ䛻䝥䝷䝈䝬Ⓨ⏕㡿ᇦ䜈౪⤥䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜚䠈䜎䛯཯ᛂ⏕ᡂ≀䛿㞺ᅖẼ୰䜈䛸ᣑᩓ䛥䜜䜛䠊┤ᚄ 10 mm䠈ᖜ 5 mm 䛾෇ᰕ㟁ᴟ䜢⏝䛔䜛䛣䛸䛷䠈Fig. 3.36 䛻♧䛩䜘䛖䛺ຍᕤ⑞䛜ᚓ䜙䜜䛯䠊㉮ᰝຍᕤ⑞䠄Fig. 3.36b䠅䛾ᗏ㠃㒊䛾㧗పᕪ䛿 100 nm PV ௨ୗ䛷䛒䜚䠈X ⥺䛾㐍ධ῝䛥䠄~ 2 µm䠅䜘䜚䜒༑ศᑠ䛥䛔䠊ᖜ 5 mm 䛿Ỉᖹ᪉ྥ䛾✵㛫チᐜᖜ䛻┦ᙜ䛩䜛䠊⤖ᬗ䛾䝭䝇䜹䝑䝖➼䛾ᙳ㡪䛻䜘䜚䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾 2 ᅇ䛾཯ᑕ㛫䛷Ỉᖹ᪉ྥ䛻䝡䞊䝮䛾఩⨨䛪䜜䛜⏕䛨䜛ྍ⬟ᛶ䛜䛒䜛䛜䠈2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛜ྠ䛨᪉ྥ䛻 0.1°䛾䝭䝇3.4㻌 䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃䝎䝯䞊䝆㝖ཤ

Fig. 3.35.

Concept of a PCVM process at an inner-wall diffraction surface ofa channel-cut crystal.

Fig. 3.36.

Examples of removal profile. (a) Removal footprint and (b) scan print.

Fig. 3.37.

Experimental setup for evaluation of channel-cut crystals.

63➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇64

Fig. 3.38.

Four-bounced reflection topograph from a pair of channel-cut crystals

measured with 10 keV X-rays. (a) As-received crystals and (b) crystals after the inner-wall
PCVM process. Pairs of dark and bright features originate from dusts on polyimide films
lying on the beam path.

䜹䝑䝖䜢᭷䛧䛶䛔䛯䛸䛧䛶䜒䠈䝡䞊䝮䛾఩⨨䛪䜜㔞䛿 1–2 mm 䛷䛒䜚䠈༑ศチᐜྍ⬟䛷䛒䜛䠊
PCVM 䛻䜘䜛ෆቨ㠃ຍᕤ๓ᚋ䛷䛾ᅇᢡ≉ᛶ䜢 SPring-8 䛻䛚䛔䛶ホ౯䛧䛯䠊ᐇ㦂䝉䝑䝖䜰䝑䝥䜢
Fig. 3.37 䛻♧䛩䠊ศ๭䞉㐜ᘏගᏛ⣔䛸ྠᵝ䛻䠄 +, −, −, + 䠅㓄⨨䜢⏝䛔䠈2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛻䜘
䜛 4 ᅇ཯ᑕᚋ䛾 X ⥺䝖䝫䜾䝷䝣䜢 CCD 䛻䜘䜚ྲྀᚓ䛧䛯䠊䛺䛚䠈ᮏ䝉䝑䝖䜰䝑䝥䛷䛿 CCD 䜢ື䛛䛩䛣䛸䛺䛟䝎䜲䝺䜽䝖䝡䞊䝮䝥䝻䝣䜯䜲䝹䜢ྲྀᚓ䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜚䠈4 ᅇ཯ᑕ䝖䝫䜾䝷䝣䛾つ᱁໬䛻⏝䛔䛯䠊X ⥺䜶䝛䝹䜼䞊10 keV 䛻䛚䛔䛶ྲྀᚓ䛧䛯䝖䝫䜾䝷䝣䜢 Fig. 3.38 䛻♧䛩䠊ほᐹ㡿ᇦ䛿ྠ୍䛷䛒
䜛䠊PCVM ຍᕤ๓䛻䛿ᩘከ䛟䛾䝇䜽䝷䝑䝏䜔Ḟ㝗䛜☜ㄆฟ᮶䜛䠊䛣䛾䜘䛖䛺᱁Ꮚṍ䜏䛿 X ⥺䛾Ἴ㠃䜢஘䛩せᅉ䛸䛺䜛䠊୍᪉䛷 PCVM ຍᕤᚋ䛿ṍ䜏䛾ᙳ㡪䛾඲䛟↓䛔䝖䝫䜾䝷䝣䛜ᚓ䜙䜜䛯䠊䛣䛾஦䛛
䜙䠈PCVM 䛻䜘䜛ෆቨ㠃ຍᕤ䛻䜘䛳䛶⾲㠃㏆ഐ䛾䝇䜽䝷䝑䝏䜔Ḟ㝗䛜᏶඲䛻㝖ཤ䛥䜜䛶䛚䜚䠈PCVM
ຍᕤ䛾᭷ຠᛶ䛜♧䛥䜜䛯䠊䛺䛚䠈6.5–12 keV 䛾 X ⥺䜶䝛䝹䜼䞊⠊ᅖ䛷ྠᵝ䛾ᐃ䜢⾜䛳䛶䛚䜚䠈

6.5–11.5 keV 䛻䛚䛔䛶స〇䛧䛯䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛜౑⏝ྍ⬟䛷䛒䜛஦䜢☜ㄆ䛧䛯䠊ᮏᡭἲ䛿㟁ᴟᙧ≧䜢ᕤኵ䛩䜛䛣䛸䛷䠈2 ḟඖⓗ䛺ᙧ≧ಟṇ䜔䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ⷧ໬䜒ྍ⬟䛷䛒䜛䠊᭦䛺䜛ᢏ⾡䛾ྥୖ䛻䜘䜚䠈ᵓ㐀ⓗ䛻Ᏻᐃ䛺䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䜔ගᏊ–ගᏊᩓ஘䛾᥈⣴䛻⏝䛔䜙䜜䜛ගᏊ䝁䝷䜲䝎䞊⤖ᬗ [66]䠈µeV 䜸䞊䝎䞊䜈䛾༢Ⰽ໬䛜ྍ⬟䛺 Fabry–Pérot 䝧䞊䝇䛾᷸⤖ᬗ [67] ➼䠈」㞧ᙧ≧䜢᭷䛩䜛୍యᆺ⣲Ꮚ䛾స〇䜒ྍ⬟䛰䛸⪃䛘䜙䜜䜛䠊

3.5㻌 ⤖ゝ65

3.5 ⤖ゝ㻌ᮏ❶䛷䛿䠈ᴟⷧ⤖ᬗ䜔䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾స〇䛻⏝䛔䛯 PCVM ຍᕤἲ䛾ᇶ♏ᴫᛕ䜔ຍᕤ≉ᛶ䜢⤂௓䛧䛯䠊䛭䛧䛶㧗䛔ᵓ㐀Ᏻᐃᛶ䜢᭷䛩䜛䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䜢 2 䝍䜲䝥ᥦ᱌䛧䠈䛭䜜䛮䜜䛾ຍᕤ䝥䝻䝉䝇䛾ヲ⣽䜢⤂௓䛧䛯䠊ヨస䛧䛯 8 䛴䛾䝃䞁䝥䝹⤖ᬗ䛾ຍᕤ⤖ᯝ䛸䠈SPring-8 䛻䛚䛔䛶⾜䛳䛯⤖ᬗᛶホ౯⤖ᯝ䜢♧䛧䛯䠊䜎䛯䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃 PCVM ຍᕤ䛻㛵䛧䛶䠈ᇶ♏ᴫᛕ䛸 X ⥺䛾ᅇᢡ≉ᛶᨵၿ䜈䛾᭷ຠᛶ䜢ᐇド䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) 㧗䛔ຍᕤ䛾✵㛫ศゎ⬟䜢ᚓ䜛䛯䜑䠈ඛ➃ᚄ 0.3 mm 䛾㟁ᴟ䜢〇స䛧䠈ຍᕤ᮲௳䛾᭱㐺໬䜢⾜䛳䛯䠊䛭䛧䛶್༙ᖜ 0.5 mm 䛾㟼Ṇຍᕤ⑞䛾ྲྀᚓ䛻ᡂຌ䛧䠈䝥䝷䝈䝬⁫ᅾ᫬㛫䛻ᑐ䛩䜛㝖ཤయ✚䛾㧗䛔⥺ᙧᛶ䜢☜ㄆ䛧䛯䠊(2) ᵝ䚻䛺⤖ᬗ㠃䛾䝅䝸䝁䞁䜴䜶䝝䛻ᑐ䛧䛶 PCVM ຍᕤ䜢⾜䛔䠈ຍᕤ㏿ᗘ䛿⤖ᬗ㠃䛻౫Ꮡ䛧䛺䛔஦䜢ᐇド䛧䛯䠊

(3) PCVM ຍᕤ䛻䛚䛔䛶䠈ඃඛⓗ䛻⤖ᬗṍ䜏䛜㝖ཤ䛥䜜䠈䛭䛾ᚋຍᕤ䛜㐍⾜䛩䜛䛻䛴䜜ᖹ⁥ᛶ䛜ྥୖ䛩䜛஦䜢♧䛧䛯䠊᭱⤊ⓗ䛻䛿⣙ 0.1 nm rms 䛾㉸ᖹ⁥㠃䛜ᚓ䜙䜜䜛஦䜢ᐇド䛧䛯䠊(4) ᶵᲔຍᕤ䛸⤌䜏ྜ䜟䛫䛯䠈❆ᆺᵓ㐀䜢᭷䛩䜛䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗస〇䝥䝻䝉䝇䜢ᥦ᱌䛧䠈ྛ䝥䝻䝉䝇䛾ᚲせᛶ䠈᭷ຠᛶ䜢♧䛧䛯䠊≉䛻䠈◊☻᫬䛻䜟䛪䛛䛻ᑟධ䛥䜜䜛⤖ᬗᏛⓗ䝎䝯䞊䝆䛜䠈ᴟⷧ㡿ᇦ䛻ᑐ䛧䛶⮴࿨ⓗ䛺ᙳ㡪䜢୚䛘䜛஦䜢Ⓨぢ䛧䠈ᴟⷧ᏶඲⤖ᬗస〇䛻ᑐ䛩䜛ᐇ⌧ྍ⬟ᛶ䜢♧䛧䛯䠊(5) ཌ䛔ຍᕤኚ㉁ᒙ䜢᭷䛩䜛䝔䞊䝟䞊㠃䛻ᑐ䛧䛶୍ᣓ PCVM ฎ⌮ྍ⬟䛺㟁ᴟ䜢〇స䛧䠈䝥䝻䝉䝇䛾᭷ຠᛶ䜢♧䛧䛯䠊䜎䛯䠈䝔䞊䝟䞊㠃✚䛾ᗈ䛔⤖ᬗ䛻ᑐ䛧䛶䛿䠈ඛ➃ᚄ䛾⣽䛔䝟䜲䝥㟁ᴟ䜢ྠᚰ෇㉮ᰝ䛩䜛䛣䛸䛷䠈ຍᕤ⏕ᡂ≀䛾෌௜╔䛾↓䛔ຍᕤኚ㉁ᒙ㝖ཤ䛻ᡂຌ䛧䛯䠊(6) ⿬㠃ຍᕤ᫬䛾⾲㠃ᙧ≧䛾㔜せᛶ䜢♧䛧䠈୍᪦ᖹᆠ໬䜢⾜䛖䛣䛸䛷䠈ᆒ୍䛺⿬㠃 PCVM ຍᕤ䛻ᡂຌ䛧䛯䠊(7) ㉮ᰝᆺⓑⰍᖸ΅ィ䛸ᗈᖏᇦ㉥እศගᖸ΅ィ䜢⤌䜏ྜ䜟䛫䛯䠈⦪䠈ᶓ୧᪉ྥ䛾ศゎ⬟䛾㧗䛔➨ 3 ❶㻌 ୺せගᏛ⣲Ꮚ䛾స〇

66
ཌ䜏ศᕸ

ᐃἲ䜢㛤Ⓨ䛧䠈㧗⢭ᗘ䛺ཌ䜏ไᚚ䜢ᐇ⌧䛧䛯䠊(8) PCVM ຍᕤ䛻䜘䜚䠈㧗ḟᅇᢡ㠃䛻䛚䛔䛶⌮᝿ⓗ䛺ᅇᢡ≉ᛶ䜢᭷䛩䜛䠈ཌ䜏 10 µm ௨ୗ䛾⤖ᬗ䛾స〇䛻ୡ⏺䛷ึ䜑䛶ᡂຌ䛧䛯䠊(9) ⤖ᬗ Type II 䛾᥇⏝䛻䜘䛳䛶䠈ᗈ䛔⠊ᅖ䛷Ⰻዲ䛺ᅇᢡ≉ᛶ䜢♧䛩ⷧ䛔⤖ᬗ䛾స〇䛻ᡂຌ䛧䛯䠊(333) 䜔 (422) ➼䠈䛒䜙䜖䜛⤖ᬗ㠃䛻ᑐ䛩䜛㐺⏝ᛶ䛾㧗䛥䜢♧䛧䛯䠊(10) 䝻䝑䜻䞁䜾䜹䞊䝤୰ᚰゅศᕸ䛸⾲㠃㉳అ䛸䛾┦㛵䜢Ⓨぢ䛧䠈ẚ㍑ⓗཌ䛔⤖ᬗ䛻䛚䛔䛶䜒䠈㧗䛔ᖹᆠᛶ䛜せồ䛥䜜䜛஦䜢Ⓨぢ䛧䛯䠊(11) X ⥺↷ᑕ䛻䜘䛳䛶௜╔䛩䜛䜟䛪䛛䛺୙⣧≀⭷䛜ᴟⷧ⤖ᬗ䛾ᅇᢡ≉ᛶ䛻ᙳ㡪䛩䜛஦䜢Ⓨぢ䛧䛯䠊䛭䛧䛶 He 䝟䞊䝆䛻䜘䛳䛶ᢚไ䛜ྍ⬟䛷䛒䜛஦䜢ᐇド䛧䛯䠊(12) ෇ᰕᆺ䛾ᅇ㌿㟁ᴟ䜢⏝䛔䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗෆቨ㠃䛾⾲㠃ṍ䜏㝖ཤ䜢ヨ䜏䛯䠊X ⥺䜢⏝䛔䛯ホ౯䛻䜘䛳䛶䠈ෆቨ㠃 PCVM ฎ⌮䛾᭷ຠᛶ䜢♧䛧䛯䠊➨4❶䜰䝷䜲䝯䞁䝖ᡭἲ
4.1 ⥴ゝ㻌ᮏ❶䛻䛚䛔䛶䠈ศ๭䞉㐜ᘏගᏛ⣔䛸䛧䛶ᶵ⬟䛥䛫䜛Ⅽ䛻㔜せ䛺䠈ศ๭䝟䝹䝇䛾✵㛫ⓗ䛺㔜」䜢
㐩ᡂ䛩䜛Ⅽ䛾䜰䝷䜲䝯䞁䝖ᡭἲ䛻㛵䛧䛶グ㏙䛩䜛䠊ศ๭䝟䝹䝇䛾ග㊰䛿⣲Ꮚ䛾ጼໃㄗᕪ䛾ᙳ㡪䜢ཷ䛡䠈⌮᝿ⓗ䛺ග㊰䛛䜙እ䜜䜛ྍ⬟ᛶ䛜䛒䜛䠊ศ๭䞉㐜ᘏගᏛ⣔ୗὶ䛾䛒䜛㠃䛻䛚䛔䛶୧ศ๭䝟䝹䝇䜢✵㛫ⓗ䛻㔜」䛥䛫䜛䛣䛸䛿䠈2 ḟඖ᳨ฟჾ䜢⏝䛔䛯䝖䝷䜲&䜶䝷䞊䛾⧞䜚㏉䛧䛻䜘䜚ẚ㍑ⓗᐜ᫆䛻㐩ᡂ䛥䜜䜛䛜䠈㧗䛔ගᏊᐦᗘ䜔䠈XPCS ᐇ㦂䛻䛔䛶኱䛝䛺ಶ䚻䛾䝁䝠䞊䝺䞁䝖䝇䝨䝑䜽䝹䜢ᚓ䜛Ⅽ䠈XFEL 䝟䝹䝇䛾㞟ග䛿ᚲ㡲䛷䛒䜚䠈㞟ග䛧䛯 XFEL 䝟䝹䝇䜢 2 ḟඖ᳨ฟჾ䛻䜘䛳䛶ほᐹ䛩䜛䛣䛸䛿⌧ᐇⓗ䛷䛿䛺䛔䠊᭦䛻䠈ගᏛ⣲Ꮚ䛾ጼໃㄪᩚ䛻ᑐ䛧䛶䠈ศ๭䝟䝹䝇䛾఩⨨䛿㞟ග㠃䛻䛚䛔䛶┤ឤ䛸䛿␗䛺䜛ື䛝䜢䛩䜛䛣䛸䛜䛒䜛䠊ᮏ❶䛷䛿䠈䛒䜙䜖䜛㞟ග⣲Ꮚ฼⏝᫬䛻䛚䛔䛶᭷ຠ䛺䜰䝷䜲䝯䞁䝖ᡭἲ䜢䠈୺䛻ᗄఱᏛⓗ䛺どⅬ䛛䜙⪃ᐹ䛩䜛䠊䜎䛯䠈ග⥺㏣㊧䜢⏝䛔䛶䠈⣲Ꮚ䛾ᅇ㌿䝇䝔䞊䝆䛻せồ䛥䜜䜛ศゎ⬟䜢ㄪᰝ䛩䜛䠊䛭䛧䛶ἼືගᏛィ⟬䛻䜘䜚⿬௜䛡䜢ᚓ䜛䠊

4.2 㞟ග䛾ཎ⌮䛸䜰䝷䜲䝯䞁䝖ㄗᕪ䛾ᙳ㡪㻌
➨ 2 ❶䛷㏙䜉䛯䜘䛖䛻䠈2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢㏻䛳䛯 lower 䝡䞊䝮䛾ග㍈䛻ᑐ䛧䛶䠈ධᑕග䛸䛾ᖹ⾜ᛶ䛜ಖド䛥䜜䜛䠊䜎䛯䠈㐜ᘏኚ᭦䛾㝿䛻 lower 䝟䝇䛾ㄪᩚ䛿⾜䜟䛺䛔䛯䜑䠈lower 䝡䞊䝮䛾ග㍈䜢䜰䝷䜲䝯䞁䝖䛾㝿䛾ཧ↷㍈䛸䛧䛶฼⏝ฟ᮶䜛䠊ᚑ䛳䛶䠈䜰䝷䜲䝯䞁䝖䛾┠ᶆ䛿䠈upper 䝡䞊䝮䛾ග㍈䜢ㄪᩚ䛧䠈㞟ග㠃䛻䛚䛔䛶ศ๭䝡䞊䝮䜢✵㛫ⓗ䛻㔜」䛥䛫䜛஦䛷䛒䜛䠊䛣䛣䛷䠈2 ᯛ┠䛾ᴟⷧ⤖ᬗ䛷䛒䜛 BM 䛻䛚䛡䜛 upper 䝡䞊䝮䛾఩⨨ㄗᕪ䜢 ∆ x , z 䠈ศ๭䞉㐜ᘏගᏛ⣔ୗὶ䛻䛚䛡䜛ゅᗘㄗᕪ䜢∆ 'x , z 䛸⨨䛟䠊ୗ௜䛝ᩥᏐ䛿᪉ྥ䜢♧䛧䠈x䠈z 䛿䛭䜜䛮䜜Ỉᖹ䠈㖄┤᪉ྥ䛸䛺䜛䠊ᮏ⠇䛷䛿䛣䜜䜙䛾䝟䝷䝯䞊䝍䛸㞟ග㠃䛻䛚䛡䜛఩⨨ㄗᕪ䛸䛾㛵ಀ䜢ᗄఱᏛⓗ䛺どⅬ䛛䜙᫂䜙䛛䛻䛩䜛䠊67

➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

68

Fig. 4.1.

Side view of conceptual diagram of source imaging with a thin lens combinedwith the split-and-delay optics (SDO). Effective source position of the upper beam isassumed to be located on the intersection between a back-propagating beam path from BM(red dashed line) and the source plane.

X ⥺䛾㞟ග䛻䛿䠈୍⯡ⓗ䛻䇾ග※䛾⦰ᑠ⤖ീ䇿䛜⏝䛔䜙䜜䜛䠊ⷧ䝺䞁䝈䜢⏝䛔䛯⦰ᑠ⤖ീ䛾ᴫᛕᅗ䜢 Fig. 4.1 䛻♧䛩䠊⤖ീ⣲Ꮚ䛾ᗄఱಸ⋡ M 䛿௨ୗ䛾䜘䛖䛻䛺䜛䠊M =b a(4.1)

䛣䛣䛷䠈a 䛿ග※䛛䜙⣲Ꮚ䜎䛷䛾㊥㞳䠈b 䛿⣲Ꮚ䛛䜙⤖ീ㠃䜎䛷䛾㊥㞳䛷䛒䜛䠊ᗄఱᏛⓗどⅬ䛛䜙䠈⤖ീ㠃䛻䛚䛡䜛䝡䞊䝮䝃䜲䝈 φi 䛿䠈 φi = ΦM 䛸䛺䜛䠄Φ 䛿ග※䝃䜲䝈䠅䠊ᚑ䛳䛶䠈a > b 䛸䛺䜛䜘䛖䛻⤖ീ⣲Ꮚ䜢㓄⨨䛩䜛䛣䛸䛷䠈X ⥺䛾㞟ග䛜㐩ᡂ䛥䜜䜛䠊䛺䛚䠈ᐇ㝿䛾㞟ග䝃䜲䝈䛿⤖ീ⣲Ꮚ䛾㛤ཱྀᩘ
䠄numerical aperture䠈NA䠅䛻䜒౫Ꮡ䛩䜛䛜䠈ᗄఱಸ⋡௨ୗ䜈䛾㞟ග䛿୙ྍ⬟䛷䛒䜛Ⅽ䠈 φi 䛜㐩ᡂྍ⬟䛺᭱ᑠ䝡䞊䝮䝃䜲䝈䛸䛺䜛䠊ศ๭䞉㐜ᘏගᏛ⣔䛾 upper 䝟䝇ෆ䛾⣲Ꮚ䛾䜰䝷䜲䝯䞁䝖ㄗᕪ䛻䜘䜚 ∆ 䛸 ∆’䛜ᑟධ䛥䜜䛯䛸䛩䜛䠊䛣䜜䜙䝡䞊䝮䛾఩⨨䠈ゅᗘኚ໬䛿ᐇຠⓗ䛺ග※఩⨨䜢ኚື䛥䛫䜛䠊ᐇຠⓗ䛺ග※఩⨨䜢䠈BM 䛛䜙ᚋ᪉䛻㐍⾜䛩䜛䝡䞊䝮ග㊰䛸ග※㠃䛸䛾஺Ⅼ䛸⪃䛘䜛䛸䠈upper 䝡䞊䝮䛾ග※఩⨨ㄗᕪ dsx , z 䛿䠈
d sx , z ≈ ∆ x , z − L∆ 'x , z(4.2)

䛸㏆ఝฟ᮶䜛䠊䛣䛣䛷䠈ග※㠃䛛䜙 BM ୰ᚰ䜎䛷䛾㊥㞳䜢 L 䛸⨨䛔䛯䠊䛣䛾䜘䛖䛺ග※䛾఩⨨ㄗᕪ䜢

4.2㻌 㞟ග䛾ཎ⌮䛸䜰䝷䜲䝯䞁䝖ㄗᕪ䛾ᙳ㡪69

᭷䛩䜛 upper 䝡䞊䝮䛿䠈⤖ീ㠃䛻䛚䛔䛶䜒ྠᵝ䛻䠈lower 䝡䞊䝮䛸䛿␗䛺䜛఩⨨䛻㞟ග䛥䜜䜛䠊⤖ീ㠃䛻䛚䛡䜛఩⨨ㄗᕪ dix , z 䛿ᗄఱᏛⓗ䛻di = ± ds M

(4.3)

䛸䛺䜛䠊➢ྕ䛿౑⏝䛩䜛⤖ീ⣲Ꮚ䛻౫Ꮡ䛧䠈Fig. 4.1 䛾ሙྜ䛿䝬䜲䝘䝇䛸䛺䜛䠊ྛศ๭䝡䞊䝮䛾ග※䛿ྠᵝ䛺᣺ᖜ䠈఩┦ศᕸ䜢᭷䛧䛶䛔䜛䛸⪃䛘䜙䜜䜛Ⅽ䠈䛭䜜䛮䜜䛜ᖸ΅䛧䛺䛔ሙྜ䠈ᘧ䠄4.3䠅䛾㛵ಀ䛿 NA 䛻౫Ꮡ䛩䜛䛣䛸䛺䛟‶䛯䛥䜜䜛䠊ᘧ䠄4.2䠅䜢䠄4.3䠅䛻௦ධ䛩䜛䛸䠈d ix , z ≈ ± M ( ∆ x , z − L∆ 'x ,z )(4.4)

䛜ᚓ䜙䜜䜛䠊⢭ᐦ䛺ᐇ㦂䜢⾜䛖Ⅽ䛻䛿䠈 d i 䛜㞟ග䝡䞊䝮ᚄ φi 䜘䜚䜒༑ศᑠ䛥䛔ᚲせ䛜䛒䜛䠊䛣䛣䛷䠈௨ୗ䛾䜘䛖䛺┠ᶆ್䜢タᐃ䛩䜛䠊di < φi 4(4.5)Ⓨᩓゅ䛜ᴟ䜑䛶ᑠ䛥䛔䠄ග※䝃䜲䝈䛜኱䛝䛔䠅ሙྜ䠈䇾ᚋ䜝↔Ⅼ㠃䇿䛻䛚䛡䜛㞟ග䜒᭷ຠ䛷䛒䜛䠊ᗄఱᏛⓗ䛻䠈ྠ୍ゅᗘ䛷⤖ീ⣲Ꮚ䛻ධᑕ䛧䛯ග⥺⩌䛿඲䛶ᚋ䜝↔Ⅼ㠃ୖ䛾୍Ⅼ䛻㞟䜎䜛䠊ᗄఱᏛⓗ㞟ග䝃䜲䝈 φbf 䛿䠈 φbf = f Ω 䛸䛺䜛䠊䛣䛣䛷 f 䛿⤖ീ⣲Ꮚ䛾↔Ⅼ㊥㞳䠈Ω 䛿䝡䞊䝮䛾Ⓨᩓゅ䛷䛒䜛䠊ᚋ䜝↔Ⅼ㠃ୖ䛷䛾఩⨨ㄗᕪ d bfx , z 䛿䠈∆ 䛻౫Ꮡ䛫䛪䠈d bfx , z = ∓ f ∆ 'x , z(4.6)

䛸⾲䛥䜜䜛䠊ᮏㄽᩥ䛷䛿䛣䜜௨ୖゝཬ䛧䛺䛔䠊᭦䛺䜛⌧ᐇⓗ䛺ᇶ‽䛸䛧䛶䠈X ⥺䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䜢㜵䛠Ⅽ䠈⤖ീ⣲Ꮚ఩⨨䛻䛚䛡䜛 upper䝡䞊䝮䛾఩⨨ㄗᕪ d fx , z 䜢⣲Ꮚ䛾㛤ཱྀ䜘䜚䜒༑ศᑠ䛥䛟䛩䜛ᚲせ䛜䛒䜛䠊఩⨨ㄗᕪ d fx , z 䛿௨ୗ䛾䜘䛖䛻᭩䛡䜛䠊

d fx , z ≈ ∆ x , z + Lf ∆ 'x , z(4.7)

➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ70䛣䛣䛷䠈Lf 䛿 BM 䛛䜙⣲Ꮚ䜎䛷䛾㊥㞳䛷䛒䜛䠊㞟ග㠃䛻䛚䛡䜛᏶඲✵㛫㔜」䜢㐩ᡂ䛧䛯ሙྜ䠄di = 0µm䠅䠈ᘧ䠄4.4䠅䠈䠄4.7䠅䠈䛭䛧䛶 a = L + Lf 䛛䜙䠈

d fx , z ≈a∆ x , z ≈ a∆ 'x , z
L

(4.8)

䛸䛺䜛䠊㛤ཱྀ䝃䜲䝈 Wf x , z 䛾⣲Ꮚ䛻ᑐ䛩䜛┠ᶆ್䜢௨ୗ䛾䜘䛖䛻タᐃ䛩䜛䠊d fx , z < Wf x , z 4(4.9)

SACLA 䛾 BL3 [68] 䛻ᖖタ䛥䜜䛶䛔䜛䠈඲཯ᑕᴃ෇㞟ග䝭䝷䞊䛻ᇶ䛵䛟 2 䛴䛾㞟ගගᏛ⣔䠄㞟ග䝃䜲䝈 1 µm [69] 䛸 50 nm [13]䠅䛻㛵䛧䛶䠈せồ䛥䜜䜛 ∆ 䛸 ∆ ' 䛾⢭ᗘ䜢⡆༢䛻ぢ✚䜒䜛䠊䛭䜜䛮䜜䛾ගᏛ⣔䛾䝟䝷䝯䞊䝍䜢 Table 4.1 䛻䜎䛸䜑䜛䠊ᗄఱಸ⋡䛿ගᏛ⣔䛻䜘䛳䛶኱䛝䛟␗䛺䜛䜒䛾䛾䠈d i < φi 4 䜢‶䛯䛩䛯䜑䛻せồ䛥䜜䜛|ds|䛾್䛿䛔䛪䜜䜒 15–20 µm 䛸䛺䛳䛯䠊䛣䛣䛷䠈┠ᶆ䠄4.5䠅䛻㛵䛧䛶䠈ศ๭䝟䝹䝇㛫䛻ゅᗘㄗᕪ䛜↓䛔ሙྜ䠄 ∆ ' = 0 䠅䛸఩⨨ㄗᕪ䛜↓䛔ሙྜ䠄 ∆ = 0 䠅䜢⪃䛘䜛䠊๓⪅䛻䛚䛔䛶䠈 ∆ x , z = dsx , z 䛸⨨䛡䜛Ⅽ䠈 ∆ 䛿 15 µm ௨ୗ䛸䛩䜛ᚲせ䛜䛒䜛䠊䜎䛯ᚋ⪅䛻䛚䛔䛶䠈L ~ 100 m䛸䛩䜛䛸䠈 ∆ ' < 0.15 µrad 䜢‶䛯䛩ᚲせ䛜䛒䜛䠊ᘧ䠄4.4䠅䛻╔┠䛩䜛䛸䠈఩⨨䠈ゅᗘㄗᕪ䛿䠈䜒䛖୍᪉䛾ㄪᩚ䛻䜘䜚⿵᏶ྍ⬟䛷䛒䜛Ⅽ䠈䛣䜜䜙䛾್䛿ศゎ⬟䛻ᑐ䛩䜛せồ䛸䜏䛺䛫䜛䠊୍᪉䛷䠈┠ᶆ䠄4.9䠅䛻ᑐ䛧䛶䠈a ~ 120 m 䛷䛒䜛Ⅽ䠈⤯ᑐ್䛸䛧䛶 ∆ < 125 µm䠈 ∆ ' < 1.25 µrad 䜢‶䛯䛩ᚲせ䛜䛒䜛䠊

System1 µm

Table 4.1.

Parameters of two focusing systems installed at BL3 of SACLA.

Direction

a (m)

b (m)

M

Wf x , z (µm)φiTolerated |ds|

V

~ 120

2.00

~ 1/60

632

1 µm

15 µm

H

~ 120.45

1.55~ 1/78

615

1 µm

20 µm

V (1st)

~120

6.52

30 nm

17 µm

55 nm

18 µm

585
~ 1/2300

V (2nd)72.7800.582

H (1st)~120.45

6.07

2275

50 nm
585
~ 1/1285
H (2nd)72.247

1.115

2695

4.3㻌 䜰䝷䜲䝯䞁䝖ᡭ㡰

71

4.3 䜰䝷䜲䝯䞁䝖ᡭ㡰㻌
4.3.1 ㄪᩚ㍈䛾᳨ウ㻌Upper 䝡䞊䝮䛾᪉ྥ䛿䠈ྛ⤖ᬗ⣲Ꮚ䛾 χ ㍈䠈ω ㍈䠄Fig. 2.1 䜢ཧ↷䠅ᅇ㌿䛻䜘䛳䛶Ỉᖹ䠈㖄┤᪉ྥ䛻ኚ໬䛥䛫䜙䜜䜛䠊䛯䛰䛧䠈Bragg ᅇᢡ䛻䜘䜛཯ᑕᙉᗘ䛿 ω 䛾ㄗᕪ䛻ᴟ䜑䛶ᩄឤ䛷䛒䜚䠈ω 䛾ㄗᕪ䛿ៅ㔜䛺ㄪᩚ䛻䜘䜚⮬䛪䛸ᩘ µrad ௨ୗ䛻ᢚไ䛥䜜䜛䠊BS 䛛䜙 BM 㛫䛾㊥㞳 l0 䛿⣙ 1 m 䛷䛒䜛䛣䛸䛛䜙䠈ω ㄗᕪ㉳ᅉ䛾 ∆z 䛿ᩘ µm 䛻␃䜎䜛䛸⪃䛘䜙䜜䜛䠊䛯䛰䛧䠈㐜ᘏኚ᭦䛾㝿䛾⛣ື㍈䛸䛺䜛 2θ1 䛸
2θ2 䛸䛾㛫䛻ᕪ䛜䛒䜛ሙྜ䜒 BM ఩⨨䛻䛚䛔䛶㖄┤᪉ྥ䛾䝡䞊䝮఩⨨ㄗᕪ䛜⏕䛨䜛䠄Fig. 4.2䠅䠊䛣䛾᫬䠈2θ1 = 2θ2 䛷䛥䛘䛒䜜䜀䜘䛟䠈X ⥺䛾䝟䝇䠄 2θ Bup 䠅䛸ᖹ⾜䛷䛒䜛ᚲせ䛿↓䛔䠄Fig. 4.2c䠅䠊ᚑ䛳䛶䠈2θ1
䛛 2θ2 䛾䛔䛪䜜䛛䛾ㄪᩚ䛷༑ศ䛷䛒䜚䠈ୗὶഃ䛾 2θ2 䛾ㄪᩚ䛻䜘䜛 ∆z 䛾ᢚไ䛜᭱䜒ຠ⋡䛜Ⰻ䛔䠊Ỉᖹ᪉ྥ䛻㛵䛧䛶䠈཯ᑕᙉᗘ䛿 χ ㄗᕪ䛻㕌ឤ䛺Ⅽẚ㍑ⓗ኱䛝䛺 χ 䛾ㄪᩚ䛜チ䛥䜜䜛䠊㏫䛻ゝ䛖䛸䠈Bragg ᮲௳䜢ྜ䜟䛫䠈༑ศ䛺཯ᑕᙉᗘ䜢ᚓ䛯䛸䛧䛶䜒 χ ㄗᕪ䛾ᢚไ䛻䛿䛺䜙䛪䠈኱䛝䛺ㄗᕪ䛜ṧᏑ䛩䜛ྍ⬟ᛶ䛜䛒䜛䠊䛧䛛䛧䠈ẚ㍑ⓗ኱䛝䛺䠈䛺䛚䛛䛴ᮍ▱䛾 χ ㄗᕪ䜢඲䛶䛾⤖ᬗ䛜᭷䛧䛶䛔䛯䛸䛧䛶䜒䠈∆x 䛾ᢚไ䛿 BS䠈BR1䠈BR2 䛾䛔䛪䜜䛛䛾⤖ᬗ䛾 χ 䛾ㄪᩚ䛰䛡䛷ྍ⬟䛷䛒䜛䠄Fig. 4.3a䠅䠊䛣䛾᫬䠈χ 䛾ᅇ㌿㔞䛻ᑐ䛩䜛 ∆x 䛾ኚ໬䛿ㄪᩚ䛧䛯⤖ᬗᚋ䛾ග㊰㛗䛜㛗䛔䜋䛹኱䛝䛟䛺䜛䠊཯ᑕᙉᗘ䛜 χㄗᕪ䛻㕌ឤ䛸䛿ゝ䛘䠈኱䛝䛺 χ ㄗᕪ䛿ዲ䜎䛧䛟䛺䛔䠊ᚑ䛳䛶䠈᭱䜒ග㊰㛗䛾㛗䛟䛺䜛 BS ⤖ᬗ䛾 χ 䜢ㄪᩚ䛩䜛䛣䛸䛜ᮃ䜎䛧䛔䠊䜎䛯䠈χ ㄪᩚ䛻䜘䜛௚䛾㍈䜈䛾ᙳ㡪䜢⪃៖䛧䛯㝿䠈㧗Ᏻᐃ䛺䝂䝙䜸䝯䞊䝍䛻ᅛᐃ䛥䜜䛯 BS ⤖ᬗ䜢ㄪᩚ䛩䜛஦䛷䠈ᙳ㡪䜢᭱ᑠ㝈䛻ᢚ䛘䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊∆ 䛜༑ศᢚไ䛥䜜䛯ሙྜ䠈ṧᏑ䛩䜛ゅᗘㄗᕪ ∆’䛿Ỉᖹ䠈㖄┤୧᪉ྥ䛸䜒 BM ⤖ᬗ䛾ㄪᩚ䛾䜏䛷㝖ཤྍ⬟䛷䛒䜛䠊ศ๭䝡䞊䝮䛾㞟ග఩⨨䜢☜ㄆ䛧䛺䛜䜙ᚤㄪᩚ䛩䜛䛣䛸䛷䠈㞟ග㠃䛻䛚䛡䜛✵㛫ⓗ㔜」䛜㐩ᡂ䛥䜜䜛䠊䛣䛣䛷䠈㐜ᘏ᫬㛫䜢ኚ᭦䠄BR ⤖ᬗ䜢⛣ື䠅䛩䜛ሙྜ䜢⪃䛘䜛䠊䜒䛧ึᮇ఩⨨䛻䛚䛔䛶 χBS 䛾ㄪᩚ䛻䜘䜚 ∆x = 0 䜢ᐇ⌧䠄Fig. 4.3a䠅䛧䛯䛸䛧䛶䜒䠈㐜ᘏ᫬㛫ኚ᭦᫬䛻᪂䛯䛺 ∆x 䛜⏕䛨ᚓ䜛䠄Fig. 4.3b䠅䠊䛣䜜䛿 BR1 ⤖ᬗ䛸 BR2 ⤖ᬗ䛾 χ 䛻ᕪ䛜䛒䜛ሙྜ䛻⏕䛨䜛䠊χBR1 = χBR2 䛾᫬䠈χBS 䛾ㄪᩚ䛻䜘䜚 ∆x = 0 䜢ᐇ⌧䛩䜛䛸 upper 䝡䞊䝮䛾ග㊰䛿ྎᙧ䛸䛺䜛䠄top view䠅䠊䛭䛾䜘䛖䛺ྎᙧ䝟䝇䛜ᐇ⌧䛥䜜䛯㝿䛿䠈㐜ᘏኚ᭦᫬䛷䜒Ỉᖹ᪉ྥ䛾䝡䞊䝮఩⨨䛾ኚ఩䛿⏕䛨䛺䛔䠊䛣䛾ㄪᩚ䜒 2θ 䛸ྠᵝ䛻䠈ୗὶഃ䛾 BR2 ⤖ᬗ䛾ㄪᩚ䛜᭱䜒ຠ⋡䛜Ⰻ䛔䠊➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

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Fig. 4.2.

Expected beam paths at different angular mismatches between 2θ1 and 2θ2.

Fig. 4.3.

Influence of mismatch between χBR1 and χBR2. Example of beam path before(a) and after (b) delay change (χBR1 ≠ χBR2).

4.3㻌 䜰䝷䜲䝯䞁䝖ᡭ㡰

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4.3.2 䜰䝷䜲䝯䞁䝖ᡭ㡰䛾᳨ウ㻌䛣䛣䛷䛿ලయⓗ䛺䜰䝷䜲䝯䞁䝖ᡭ㡰䜢⤂௓䛩䜛䠊ᐇ㝿䛻ᐇ㦂䛧䛯⤒㦂䜢㋃䜎䛘䛶グ㏙䛩䜛஦䛻䛺䜛
Ⅽ䠈ㄞ䜏㣕䜀䛧䛶䜒䜙䛳䛶ᵓ䜟䛺䛔䠊䜎䛪䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢ྵ䜑䠈඲⤖ᬗ䛾఩⨨䜢ㄪᩚ䛩䜛䠊➨ 3 ❶䛷グ㏙䛾㏻䜚䠈ᮏගᏛ⣔䛷⏝䛔䜙䜜䜛ᴟⷧ⤖ᬗ䛿୰ኸ㒊䛾䜏ⷧ䛔ᵓ㐀䛸䛺䛳䛶䛚䜚䠈ᇶᮏⓗ䛺᪉㔪䛸䛧䛶 X ⥺䛾ග㍈䛜䛭䛾୰ኸ㒊䛻᮶䜛䜘䛖䛻㓄⨨䛩䜜䜀䜘䛔䠊ᚑ䛳䛶㏱㐣ගᙉᗘ䛾⤖ᬗ఩⨨౫Ꮡᛶ䜢ᐃ䛧䠈䛭䛾㔜ᚰ఩⨨䛻⤖ᬗ䜢㓄⨨䛩䜛䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛻㛵䛧䛶䛿䠈Ỉᖹ䠈㖄┤᪉ྥ䛾䜶䝑䝆఩⨨䜢ྠᵝ䛻ᐃ䛧䠈䛭䛾఩⨨䜢ᇶ‽䛸䛧䛶㓄⨨䛩䜛䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛿ṇ䛧䛔఩⨨䛻㓄⨨ᚋ䛩䛠䛻 ω 䜢ㄪᩚ䛧䠈ᇶ‽䛸䛺䜛 lower 䝡䞊䝮䛾ග㍈䜢ฟ䛩䠊䛭䛾 lower 䝡䞊䝮䛾ග㍈䜢ᇶ‽䛸䛧䛶 BM 䜢㓄⨨䛩䜛䠊䛺䛚䠈⤖ᬗ䛾᭷ຠ㡿ᇦ䛿䝡䞊䝮䝃䜲䝈䛻ᑐ䛧䛶༑ศ኱䛝䛔Ⅽ䠈䛣䜜䜙䛾ᡭἲ䛻䜘䜛⢭ᗘ䛿༑ศせồ䜢‶䛯䛩䠊඲⤖ᬗ䛾 ω 䜢ㄪᩚ䛧䠈upper 䝡䞊䝮䜢ศ๭䞉㐜ᘏගᏛ⣔ୗὶ䜎䛷㏻䛩䠊䛣䛣䛷䠈ศ๭䞉㐜ᘏගᏛ⣔䛾䛩䛠ୗὶ䛻 2 ḟඖ᳨ฟჾ䜢㓄⨨䛧䠈୧ศ๭䝡䞊䝮䛾఩⨨䜢☜ㄆ䛩䜛䠊኱䜎䛛䛻ᖹ⾜ᛶ䜢ฟ䛩Ⅽ䠈䛥䜙䛻ୗὶ䛻䜒䛖 1 䛴 2 ḟඖ᳨ฟჾ䜢㓄⨨䛩䜛䛣䛸䛜ᮃ䜎䛧䛔䠊ึᮇ䛾≧ែ䛷䛿 upper 䝟䝇⤖ᬗ䛾 χ ㄗᕪ䛜ᮍ▱䛷䛒䜛Ⅽ䠈㠀ᖖ䛻኱䛝䛺Ỉᖹ᪉ྥ䛾䝡䞊䝮఩⨨ㄗᕪ䛜⏕䛨䛶䛔䜛ྍ⬟ᛶ䛜䛒䜛䠊BM 䜢㏱㐣䛧䛯 X ⥺ᙉᗘ䜢ᐃ䛩䜛 BIM3䠄Fig. 2.3 䜢ཧ↷䠅䛾ᙉᗘᇶ‽䛷 χBS 䜢኱䜎䛛䛻ㄪᩚ䛩䜛䠄䛣䛾᫬ BM 䛾 ω 䛿኱䛝䛟䛪䜙䛧䛶䛚䛟䠅䠊䜎䛯䠈1 䛴┠䛾᳨ฟჾ䛻䛚䛡䜛ศ๭䝡䞊䝮㛫䛾఩⨨ㄗᕪ
∆Det1 䛜∆ Det1 ≈ ∆(4.10)

䛸䜏䛺䛫䜛⛬ᗘ䛻 2 䛴䛾᳨ฟჾ䜢⏝䛔䛶ᖹ⾜໬䛧䛶䛚䛟䠊䛭䛾㝿䛾⢭ᗘ䛿 BM 䛛䜙 1 䛴┠䛾᳨ฟჾ䜎䛷䛾㊥㞳䛻౫Ꮡ䛩䜛䠊ω 䛾ㄗᕪ䠄∆’z䠅䛿༑ศᢚไ䛥䜜䛶䛔䜛䛯䜑䠈Ỉᖹ᪉ྥ䛻㛵䛧䛶䛾䜏ᖹ⾜໬䜢⾜䛖䠊2 䛴┠䛾᳨ฟჾ䛾఩⨨䛻䜒䜘䜛䛜䠈BM 䛛䜙༑ศ㞳䜜䛶䛔䜛䛾䛷䛒䜜䜀䠈lower 䝡䞊䝮䛾Ỉᖹ఩⨨䛻 upper 䝡䞊䝮䜢ㄪᩚ䛩䜛䛰䛡䛷䜘䛔䠊䛣䛣䛛䜙๓㡯䛷᳨ウ䛧䛯㍈䜢ㄪᩚ䛩䜛䠊䛣䜜䜎䛷䛾㐣⛬䛷 ∆z 䛾ᢚไ䛿⾜䛘䛶䛔䛺䛔Ⅽ䠈䜎䛪 2θ2䛾ㄪᩚ䜢⾜䛖䠊䛣䛾᫬䠈1 䛴┠䛾᳨ฟჾ䛻䛚䛔䛶኱䛝䛺㖄┤᪉ྥ䛾䝡䞊䝮఩⨨ㄗᕪ䛜⏕䛨䛶䛔䜛ሙྜ䛿ὀព䛜ᚲせ䛸䛺䜛䠊స〇䛧䛯ᴟⷧ⤖ᬗ䛾᭷ຠ㡿ᇦ䛿䠈㖄┤᪉ྥ䛻ᑐ䛧䛶䛿ẚ㍑ⓗᑠ䛥䛟䠈䜎䛯᭷ຠ㡿ᇦ䜶䝑䝆㒊䛻䛚䛔䛶኱䛝䛺Ἴ㠃䛾஘䜜䛜⏕䛨䜛ྍ⬟ᛶ䛜䛒䜛䠊ᚑ䛳䛶䠈ᚲせ䛻ᛂ䛨䛶 2θ2 ㄪᩚ⏝䛾䝎䝭䞊⤖ᬗ䜢⏝䛔䜛䠄䛯䛰䛧䠈2θ2 䛾ᅇ㌿㔞䛻ᑐ䛩䜛 ∆z 䛾⥺ᙧᛶ䜢ồ䜑䛺䛔ሙྜ䛿≉䛻ᚲせ䛺䛔䠅䠊ḟ䛻䠈2 ḟඖ᳨ฟჾ䜢⏝䛔䛶 χBS 䜢ㄪᩚ䛩䜛䠊䛣䛾᫬䠈ᘧ䠄4.10䠅䜢‶䛯䛩⛬ᗘ䛻 χBM 䜒ྠ᫬䛻

➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

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Fig. 4.4.

Alignment procedure.

ㄪᩚ䛩䜛ᚲせ䛜䛒䜛䠊䛣䜜䜙 ∆ 䛾ᢚไ䛿䠈⌮᝿ⓗ䛻䛿᳨ฟჾ䛾䝢䜽䝉䝹䝃䜲䝈䝇䜿䞊䝹䜎䛷⾜䛔䛯䛔䛸䛣䜝䛷䛿䛒䜛䛜䠈ᐇ㝿䛻䛿䝡䞊䝮䝃䜲䝈䛾 1/10 ⛬ᗘ䛜㝈⏺䛷䛒䜛䠊䝇䝸䝑䝖➼䛾䜶䝑䝆䜢⏝䛔䜜䜀䝢䜽䝉䝹䝃䜲䝈䝺䝧䝹䛾ㄪᩚ䛿ྍ⬟䛸䛺䜛䜒䛾䛾䠈䛭䛾䜘䛖䛺ㄪᩚ䛿ከ䛟䛾䝕䞊䝍ྲྀᚓ䜔ゎᯒ䜢ᚲせ䛸䛧䠈㠀ᖖ䛻ᡭ㛫䛜䛛䛛䜛䠊๓⠇䛷䛾㆟ㄽ䛾㏻䜚䠈ග※䛛䜙䛾㊥㞳 L 䛜኱䛝䛔ሙྜ䛿 50 µm 䜢┠Ᏻ䛸䛧䠈ẚ㍑ⓗ䝷䝣䛺ㄪᩚ䛷ᵓ䜟䛺䛔䠊L 䛾ᑠ䛥䛺ගᏛ⣔䛻䛚䛔䛶䜒䠈ᚋ㏙䛩䜛཯᚟ἲ䜢⏝䛔䜛䛣䛸䛷 ∆ 䛾ᢚไ䛿ྍ⬟䛷䛒
䜛Ⅽ䠈䝢䜽䝉䝹䝃䜲䝈䝺䝧䝹䛾ㄪᩚ䛿ᚲせ䛺䛔䠊∆ 䛾ᢚไ䛜᏶஢䛧䛯ᚋ䠈㞟ග㠃䛻䛚䛡䜛ྛศ๭䝡䞊䝮䛾఩⨨䜢☜ㄆ䛧䠈BM ⤖ᬗ䛾䜏䛾ㄪᩚ䛻䜘䜚 upper 䝡䞊䝮䜢 lower 䝡䞊䝮䛸㔜」䛥䛫䜛䠊䛭䛾㝿䛾 ω 䛾ㄪᩚ㔞䛿 1 µrad ௨ୗ䛸⪃䛘䜙䜜䜛Ⅽ䠈ᙉᗘ䜈䛾ᙳ㡪䛿ᴟ䜑䛶ᑠ䛥䛔䠊௨ୖ䛾ᡭ㡰䛷㞟ග㠃䛻䛚䛡䜛㔜」䛿㐩ᡂ䛥䜜䜛䜒䛾䛾䠈๓㡯䛷㏙䜉䛯䜘䛖䛻䠈χBR 㛫䛾ㄗᕪ䛻䜘

4.3㻌 䜰䝷䜲䝯䞁䝖ᡭ㡰

75

䜛Ỉᖹ᪉ྥ䛾䝡䞊䝮఩⨨䛪䜜䛜㐜ᘏ᫬㛫ኚ᭦᫬䛻⏕䛨䜛ྍ⬟ᛶ䛜㧗䛔䠊BR ⤖ᬗ䛾⛣ື㔞 ∆D 䛻ᑐ䛩䜛Ỉᖹ᪉ྥ䛾䝡䞊䝮఩⨨䛪䜜䛿⥺ᙧⓗ䛸䛺䜛Ⅽ䠈䛭䛾ഴ䛝䜢ᐃ䛩䜛䠊䛣䛾᫬䠈χBR2 䜢ㄪᩚ䛩䜛䛯䜃䛻 χBS 䛾ㄪᩚ䛻䜘䜚 ∆x = 0 䜢ᐇ⌧䛧䛺䛡䜜䜀䠈∆x ≠ 0 䛾఩⨨䛻཰᮰䛩䜛ྍ⬟ᛶ䛜䛒䜛䠊䛯䛰䛧䠈BR ⤖ᬗ䛾⛣ື䛻క䛖䝢䝑䝏䞁䜾䠈䝶䞊䜲䞁䜾䠈䝻䞊䝸䞁䜾䛻䜘䜛⤖ᬗ䛾ጼໃኚ໬䛾ᙳ㡪䛜ᠱᛕ䛥䜜䜛Ⅽ䠈⌧ᐇⓗ䛻䛿 χBR 䛾ㄪᩚ䛿㞴䛧䛔䠊ᐇ㝿䛻䠈䛣䜜䜎䛷ጼໃኚ໬䛜ᨭ㓄ⓗ䛷䛒䜚䠈χBR 䛾ㄪᩚ䛿⾜䛘䛶䛔䛺䛔䠊௨ୖ䠈䜰䝷䜲䝯䞁䝖ᡭ㡰䜢 Fig. 4.4 䛻䜎䛸䜑䜛䠊⌧≧┤㐍䝇䝔䞊䝆䛾Ᏻᐃᛶ䛜୙༑ศ䛷䛒䜛Ⅽ䠈䝥䝻䝉䝇 5-1䠈5-2 䛿⾜䜟䛪䛻䠈䝥䝻䝉䝇 4-2䠈䜒䛧䛟䛿ᚲせ䛻ᛂ䛨䛶 3 䜢⾜䛖䛣䛸䛸䛺䜛䠊

4.4 ᅇ㌿䝇䝔䞊䝆䛾せồศゎ⬟㻌ᮏ⠇䛻䛚䛔䛶䠈๓㏙䛾䜰䝷䜲䝯䞁䝖ᡭἲ䜢㐩ᡂ䛩䜛Ⅽ䛻せồ䛥䜜䜛ᅇ㌿䝇䝔䞊䝆䛾ศゎ⬟䜢ᗄఱᏛ䠈ග⥺㏣㊧䛻ᇶ䛵䛔䛶᳨ウ䛧䠈ἼືගᏛィ⟬䛸䛾ẚ㍑䜢⾜䛖䠊

4.4.1 ᗄఱᏛ䛻䜘䜛ぢ✚䜒䜚㻌ᮏ㡯䛷䛿䠈ᗄఱィ⟬䛻ᇶ䛵䛝せồศゎ⬟䜢⡆༢䛻ぢ✚䜒䜛䠊ᮏගᏛ⣔䛻䛚䛔䛶䠈upper 䝡䞊䝮䛾᪉ྥ䛿ྛ⤖ᬗ䛾 χ䠈ω ᅇ㌿䛻䜘䛳䛶௨ୗ䛾䜘䛖䛻ኚ໬䛩䜛䠊δ∆ 'x = 2δχ sin θ Bupδ∆ 'z = 2δω(4.11)

䛣䛣䛷䠈 δ∆ 'x ,z 䛿ゅᗘ䛾ኚ໬㔞䛷䛒䜛䠊䜎䛯䠈χBS䠈2θ2 䛾ㄪᩚ䛻䜘䜚䠈BM ఩⨨䛻䛚䛡䜛䝡䞊䝮఩⨨䛾ኚ໬ δ∆ x ,z 䛿௨ୗ䛾䜘䛖䛻䛺䜛䠊δ∆ x ≈ 2δχ BS sin θ Buplupδ∆ z ≈ −δ 2θ 2 D sin 2θ Bup cot θ Bup(4.12)

䛣䛣䛷䠈 δχ BS 䠈 δ 2θ 2 䛿䛭䜜䛮䜜 χBS䠈2θ2 䛾ㄪᩚゅᗘ䛷䛒䜛䠊䜎䛯䠈lup 䛿 upper 䝤䝷䞁䝏䛾ග㊰㛗䛷䛒䜚䠈௨ୗ䛾䜘䛖䛻᭩䛡䜛䠊➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ76

lup ≈ l0 + 2 D (1 − cos 2θ B )(4.13)

l0 䛿⣙ 1 m 䛷䛒䜛䠊䜎䛯䠈BR ⤖ᬗ䜢 ∆D ⛣ື䛥䛫䛯㝿䛾䝡䞊䝮఩⨨䛾ኚ໬䛿{}δ∆ x ≈ 2 2 (1 − cos 2θ Bup ) χ BS + (1 − 2cos 2θ Bup ) χ BR1 + χ BR2 sin θ Bup ∆D(4.14)

䛸䛺䜚䠈3 䛴䛾 χ ㍈䛾⤡䜣䛰㠀ᖖ䛻」㞧䛺ᙧ䜢䛸䜛䠊䛣䛣䛷 BR 䛾✌ື⠊ᅖ඲ᇦ䜢䝇䜻䝱䞁䛥䛫䛯㝿䛻⏕䛨䜛䝖䞊䝍䝹䛾Ỉᖹኚ఩㔞 ∆ total䜢ᑟධ䛩䜛䠊χBR2 䜢ኚ໬䛥䛫䛯㝿䛾 ∆ total䛾ኚ໬㔞 δ∆ total
䛿䠈ᮏග
x
x
x
Ꮫ⣔䛻䛚䛡䜛 D 䛾✌ື⠊ᅖ 70 mm 䜢⏝䛔䛶௨ୗ䛾䜘䛖䛻᭩䛡䜛䠊δ∆ total≈ 0.14sin θ Bδχ BR2
x(4.15)

ᘧ䠄4.11䠅–䠄4.15䠅䛛䜙䠈 | δ∆ x , z |< 15 µm䠈 | δ∆ ' x , z |< 0.15 µrad 䜢 10 keV 䛻䛚䛔䛶‶䛯䛩䛻䛿䠈δχBS <22 µrad䠈δχBM < 0.23 µrad䠈δχBR2 < 330 µrad䠈δ2θ2 < 66 µrad䠈δωBM < 0.075 µrad 䛜ᚲせ䛷䛒䜛䠊䛺䛚䠈ᘧ䠄4.12䠅䛾ィ⟬䛻䛚䛔䛶䠈D = 127 mm 䛸䛧䛯䠊䛣䜜䜙䛜 10 keV 䛻䛚䛔䛶せồ䛥䜜䜛䝇䝔䞊䝆ศゎ⬟䛸䛺䜛䠊ศ๭䞉㐜ᘏගᏛ⣔䛾チᐜ䜶䝛䝹䜼䞊⠊ᅖ䛷䛒䜛 6.5–11.5 keV 䛻䛚䛔䛶せồ䛥䜜䜛ศゎ⬟䛜᭱䜒ཝ䛧䛟䛺䜛 X ⥺䜶䝛䝹䜼䞊䛿䠈χBS䠈χBM䠈χBR2 䛻㛵䛧䛶䛿 6.5 keV䠈2θ2 䛻㛵䛧䛶䛿 11.5 keV 䛸䛺䜛䠊䛭䜜䛮䜜ィ⟬䛧┤䛩䛸䠈δχBS < 13 µrad䠈δχBM < 0.15 µrad䠈δχBR2 < 220 µrad䠈δ2θ2 < 64 µrad 䛸䛺䜛䠊䛣䜜䛜ᗄఱᏛⓗ䛻ぢ✚䜒䜙䜜䜛せồศゎ⬟䛸䛺䜛䠊

4.4.2 ග⥺㏣㊧ィ⟬䛻䜘䜛ぢ✚䜒䜚㻌ᮏ㡯䛻䛚䛔䛶䠈ග⥺㏣㊧ィ⟬䛻ᇶ䛵䛝䜘䜚⌧ᐇⓗ䛺⣔䛻䛚䛔䛶せồศゎ⬟䜢ぢ✚䜒䜛䠊ග⥺㏣㊧ィ⟬䛻䜘䜚䠈ྛ⤖ᬗ⣲Ꮚᚋ䛾 upper 䝡䞊䝮䛾ఏ᧛䝧䜽䝖䝹 Xcrystal䠄༢఩䝧䜽䝖䝹䠅䛸ྛ⤖ᬗ⾲㠃䛻䛚䛡䜛఩⨨䝧䜽䝖䝹 Pcrystal䠈䛭䛧䛶ᐇຠⓗග※䛾఩⨨䝧䜽䝖䝹 Ps 䜢ồ䜑䛯䠊ග⥺㏣㊧ィ⟬䛻⏝䛔䛯⣔
䜢 Fig. 4.5 䛻♧䛩䠊Lower 䝡䞊䝮䛿⌮᝿ⓗ䛺ග㊰䜢ఏ᧛䛧䠈BM ⾲㠃䛸䠄0䠈0䠈0䠅䛷஺ᕪ䛩䜛䛸௬ᐃ䛧䛯䠊ྛ⤖ᬗ䛾᱁Ꮚ㠃䛾ἲ⥺䝧䜽䝖䝹䜢௨ୗ䛾䜘䛖䛻タᐃ䛧䛯䠊4.4㻌 ᅇ㌿䝇䝔䞊䝆䛾せồศゎ⬟Fig. 4.5.

77

Coordinate system employed in ray-trace calculations. Dashed and solid lines

represent the ideal and practical beam paths, respectively.

sin χ BSsin χ BR1








n BS =  − cos χ BS sin θ B  , n BR1 =  cos χ BR1 sin θ B  , cos χ cos θ  − cos χ cos θ 
BS
B 
BR1
B


sin χ BR2 sin χ BM





n BR2 =  − cos χ BR2 sin θ B  , n BM =  cos χ BM sin θ B 
 − cos χ cos θ  cos χ cos θ 
BR2
B
BM
B



(4.16)

䛣䜜䛿 BS 䜈䛾ධᑕග䝧䜽䝖䝹䠄0䠈1䠈0䠅䛻ᑐ䛧䛶䠈඲⤖ᬗ䛜 Bragg ᮲௳䜢‶䛯䛩䛣䛸䜢ព࿡䛧䛶䛔䜛䠊䛣䛣䛷 θB 䛸ືຊᏛ⌮ㄽ䛻䛚䛡䜛☜䛛䛺 Bragg ゅ䛸䛾ㄗᕪ䛿 30 µrad ௨ୗ䛸ᴟ䜑䛶ᑠ䛥䛔Ⅽ⪃៖䛧䛺䛔䠊ᘧ䠄4.4䠅䛿䛣䛾⣔䛻䛚䛔䛶௨ୗ䛾䜘䛖䛻᭩䛝᥮䛘䜙䜜䜛䠊Ps = PBM − lX BM(4.17)

䛣䛣䛷䠈l 䛿 PBM 䛸 Ps 㛫䛾㊥㞳䛷䛒䜛䠊㞟ග఩⨨䛿ᘧ䠄4.3䠅䛻ᚑ䛖䜒䛾䛸௬ᐃ䛩䜛䠊ྛᅇ㌿㍈䛻ᑐ䛩䜛ィ⟬⤖ᯝ䜢 Fig. 4.6 䛻♧䛩䠊䛣䛣䛷䠈ᑐ㇟䛸䛩䜛㍈௨እ䛻ㄗᕪ䛿୚䛘䛪䠈X ⥺䛾䜶䝛䝹䜼䞊䛺䛹䛾᮲௳䛿᭱䜒ཝ䛧䛔᮲௳䛸䛧䛯䠊䛣䛾ሙྜ䠈๓㡯䛻䛚䛡䜛ᗄఱィ⟬䛸ྠᵝ䛾ィ⟬➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

78Fig. 4.6.

Results of ray-trace calculations.

䛜ග⥺㏣㊧ィ⟬ෆ䛷⾜䜟䜜䛶䛔䜛䛣䛸䛻䛺䜚䠈ྠ୍䛾せồศゎ⬟䛜ᑟฟ䛥䜜䛯䠊ග⥺㏣㊧ィ⟬䛾᭱኱䛾≉ᚩ䛿䛒䜙䜖䜛ㄗᕪ䛾ᙳ㡪䜢ᐜ᫆䛻ㄪᰝ䛷䛝䜛Ⅼ䛻䛒䜛䠊䛣䛾ග⥺㏣㊧
ィ⟬䛷䛿䠈⤖ᬗ䛾᱁Ꮚ㠃䛸⾲㠃䛸䜢䛭䜜䛮䜜ู䛻ᐃ⩏䛩䜛䛣䛸䛻䜘䛳䛶䠈䛭䜜䜙䛾㛫䛾䝭䝇䜹䝑䝖䛾ᙳ㡪䛜ㄪᰝྍ⬟䛷䛒䜛䠊䝭䝇䜹䝑䝖䜢᭷䛩䜛ሙྜ䠈ྛ Pcrystal 䛜⌮᝿⣔䛛䜙䛪䜜䜛䠊䛯䛰䛧䠈୍⯡ⓗ䛻䝭䝇䜹䝑䝖䛿 0.1°௨ୗ䛷䛒䜚䠈Pcrystal 䛾⌮᝿䛛䜙䛾䛪䜜䛿䝘䝜䝯䞊䝖䝹䜸䞊䝎䞊䛷䛒䛳䛯䛯䜑䠈↓どྍ⬟䛷䛒䜛䠊ᶵᲔⓗ䛻ไᚚ䛥䜜䜛㐜ᘏ᫬㛫䛾Ỵᐃ⢭ᗘ䛿ᴟ䜑䛶㔜せ䛷䛒䜛䠊㆟ㄽ䛧䛶䛝䛯䜰䝷䜲䝯䞁䝖ᡭἲ䛻

4.4㻌 ᅇ㌿䝇䝔䞊䝆䛾せồศゎ⬟79䜘䛳䛶䠈upper 䝡䞊䝮䛾ග㊰䜢⌮᝿≧ែ䛻䛩䜛䛣䛸䛿ᅔ㞴䛷䛒䜛䛯䜑䠈≺䛔㏻䜚䛾㐜ᘏ᫬㛫䛻䝉䝑䝖䛩䜛䛣䛸䛜㞴䛧䛔䛸⪃䛘䜙䜜䜛䠊䛣䛣䛷䛿䛭䛾ᙳ㡪䜢ㄪᰝ䛩䜛䠊䜎䛪䠈䛭䜜䛮䜜䛾⤖ᬗ䛾 χ 䜢኱䛝䛟ㄪᩚ䛧䛯ሙྜ䜢⪃䛘䜛䠊BS䠈BR1䠈BR2䠈BM 䛾 χ 䜢䛭䜜䛮䜜−0.2°䠈0.2°䠈0.2°䠈−0.2°䛻䝉䝑䝖䛧䛯㝿䠈10keV 䛻䛚䛔䛶┠ᶆ䛾㐜ᘏ᫬㛫䛸䛾䛪䜜䛿 1–2 fs 䛷䛒䜚䠈∆D 䛻ᑐ䛩䜛⥺ᙧᛶ䛾ㄗᕪ䛿䜟䛪䛛 0.007
fs/mm 䛸䠈ゅᗘㄪᩚ䛻䜘䜛ᙳ㡪䛿䜋䛸䜣䛹ぢ䜙䜜䛺䛛䛳䛯䠊⤯ᑐ㐜ᘏ᫬㛫䠈⥺ᙧᛶ䛻᭱䜒኱䛝䛺ᙳ㡪䜢୚䛘䜛䜒䛾䛿䠈⛣ື㍈䛾ゅᗘ䛷䛒䜛 2θ1 䛸 2θ2 䛸䛾 2θB 䛛䜙䛾ㄗᕪ䛷䛒䜛䠊⪃᱌䛧䛯䜰䝷䜲䝯䞁䝖ᡭἲ䛻䜘䛳䛶䠈2θ1 = 2θ2 䛜‶䛯䛥䜜䛶䛔䜛䛸䛧䠈䛭䜜䛮䜜 0.1㼻䛪䜙䛧䛯ሙྜ䠈10 keV 䛻䛚䛔䛶᭱኱ 900 fs䛾⌮᝿≧ែ䛛䜙䛾䛪䜜䛜⏕䛨䜛䠊䛯䛰䛧䛣䛾ሙྜ䛷䜒䠈⥺ᙧᛶ䛾䛪䜜䛿䜟䛪䛛 3.05 fs/mm 䛸䠈0.2%⛬ᗘ䛾ㄗᕪ䛻␃䜎䜛䛸ᮇᚅ䛥䜜䜛䠊

4.4.3 ἼືගᏛィ⟬䛻䜘䜛ぢ✚䜒䜚㻌䛣䜜䜎䛷䛿ᗄఱᏛⓗ䛺どⅬ䛻ᇶ䛵䛝䠈ᘧ䠄4.3䠅䛜‶䛯䛥䜜䜛஦䜢๓ᥦ䛸䛧䛶䛝䛯䠊䛧䛛䛧䠈㞟ග≉ᛶ䛿఩┦䜢ྵ䜑䛯ග䛾Ἴືᛶ䛻ᙉ䛟ᙳ㡪䜢ཷ䛡䜛䠊XFEL 䛻ᑐ䛧䛶䛿䠈䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䜢䛺䛟䛩䜘䛖༑ศ኱䛝䛺 NA 䜢᭷䛩䜛⣲Ꮚ䛜⏝䛔䜙䜜䜛䛣䛸䛜ከ䛟䠈ᘧ䠄4.3䠅䛿༑ศ‶䛯䛥䜜䜛䛸⪃䛘䜙䜜䜛䛜䠈⮬᫂䛷䛿䛺䛔䠊ᮏ㡯䛷䛿䠈௨ୗ䛾䜘䛖䛻♧䛥䜜䜛 Fresnel–Kirchhoff ᅇᢡබᘧ䛻ᇶ䛵䛝䠈ἼືගᏛⓗ䛻㞟ග఩⨨䜢ィ⟬䛧䠈ᗄఱᏛⓗ䛺ぢ✚䜒䜚䛾᭷ຠᛶ䜢♧䛩஦䜢┠ⓗ䛸䛩䜛䠊

U ( P0 ) =A exp ik ( r21 + r01 )   cos ( n, r01 ) − cos ( n, r21 ) 

 ds
iλ ∫∫
r21r012Σヲ⣽䛿 Ref. [70] 䛻௵䛫䜛䛜䠈ග※䛾Ἴືሙ U(P2) 䛜㛤ཱྀ P1 䜢௓䛧䛶ほ(4.18)

㠃 P0 䛻స䜚ฟ䛩Ἴືሙ

U(P0) 䜢♧䛩ᘧ䛷䛒䜛䠊䛭䛾㝿䠈ග※䜔䝇䜽䝸䞊䞁ୖ䛾Ἴືሙ U 䜢䛭䜜䛮䜜䛾఩⨨䛷䛾᣺ᖜ䠈఩┦䜢ึᮇ᣺ᖜ䞉఩┦䛸䛩䜛Ⅼග※䛾㞟ྜ䛸䜏䛺䛧䛶䛔䜛䠊䛣䜜䛿ගᩓ஘䛾ᮏ㉁䛸䜒ゝ䛘䜛ᛶ㉁䛷䛒䜚䠈ᅇᢡ䠈཯ᑕ䜢㆟ㄽ䛩䜛ୖ䛷ᗈ䛟⏝䛔䜙䜜䛶䛔䜛ᴫᛕ䛷䛒䜛䠊඲཯ᑕ䝭䝷䞊䛻䜘䜛㞟ග䛾㝿䛿䠈㛤ཱྀ P1
䜢䝭䝷䞊⾲㠃䛻⨨䛝᥮䛘䜛䛣䛸䛷㞟ග㠃ୖ䛾Ἴືሙ䜢Ⰻ䛟෌⌧䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛 [71]䠊
ィ⟬䜢⾜䛖㝿ග※䛾タᐃ䛜㔜せ䛸䛺䜛䠊䜺䜴䝇䝡䞊䝮䛸௬ᐃ䛩䜛䛸䠈ග※䝃䜲䝈 Φ䠄FWHM䠅䛸Ⓨᩓゅ Ω䠄FWHM䠅䛸䛾㛫䛻䛿௨ୗ䛾㛵ಀ䛜ᡂ䜚❧䛴䠊Ω=

2ln(2)λ 2M
πΦ(4.15)

➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

80Fig. 4.7.

Examples of results of wave-optical simulations at 10 keV. (a) Beam waist and(b) line profile along white dashed line in the vertical direction calculated with the 1 µm
focusing system. (c) Beam waist and (d) the line profile in the horizontal direction
calculated with the 50 nm focusing system.

䛣䛣䛷 M 2 䛿䝡䞊䝮䛾ရ㉁䜢⾲䛩䝟䝷䝯䞊䝍䛷䛒䜚䠈 M 2 = 1 䛾᫬䠈⌮᝿ⓗ䛺䜺䜴䝇䝡䞊䝮䛸䛺䜛䠊
SACLA 䛿 M 2 = 2–3 䛸ゝ䜟䜜䛶䛚䜚 [69]䠈Ⓨᩓゅ Ω ~ 1.9 µrad FWHM 䛷䛒䜛䛣䛸䛛䜙䠈ග※䝃䜲䝈Φ 䛿~ 57–86 µm FWHM 䛸ぢ✚䜒䜙䜜䜛䠊䛯䛰䛧 M 2 䛾ᙳ㡪䜢ィ⟬ୖ䛷ṇ☜䛻෌⌧䛩䜛䛣䛸䛿㞴䛧䛔஦䠈䜎䛯㞟ගᚄ䛷䛿䛺䛟㞟ග఩⨨䛻ὀ┠䛧䛶䛔䜛஦䛛䜙䠈௒ᅇ M 2 = 1 䛾 Φ = 30 µm FWHM 䜢᥇⏝䛧䛯䠊䛣䛾᫬䛾Ⓨᩓゅ䛿 Ω = 1.82 µrad FWHM 䛸䛺䜛䠊SACLA 䛻ᖖタ䛥䜜䛶䛔䜛㞟ගගᏛ⣔䛻ᑐ䛧䛶⾜䛳䛯ィ⟬⤖ᯝ౛䜢 Fig. 4.7 䛻♧䛩䠊୧ศ๭䝡䞊䝮䛾ග※ᙉᗘ䜢➼䛧䛟䛧䠈ゅᗘㄗᕪ ∆’ = 0䠈ග※఩⨨ㄗᕪ ds = +150 µm 䛸䛧䛯䠊䛭䜜䛮䜜䛿ྍᖸ΅ᛶ䜢ᣢ䛯䛺䛔䠊୧ศ๭䝡䞊䝮䛾㞟ග఩⨨䛜ศ㞳䛥䜜䛶䛔䜛䛣䛸䛜᫂☜䛷䛒䜛䠊䛣䛣䛷䛿Ⅼග※㞟ග㠃䛻䛚䛡䜛ྛศ๭䝡䞊䝮䝥䝻䝣䜯䜲䝹䜢䜺䜴䝇䝣

4.4㻌 ᅇ㌿䝇䝔䞊䝆䛾せồศゎ⬟81䜱䝑䝖䛩䜛䛣䛸䛷䠈䛭䜜䛮䜜䛾఩⨨ㄗᕪ di 䜢⟬ฟ䛩䜛䠊䛺䛚䠈∆’ᑟධ᫬䛿ᘧ䠄4.17䠅䛾 Ps 䛷䛿䛺䛟䠈ග※䞉BM 㛫䛾㊥㞳 L 䜢ᅛᐃ䛥䛫䠈㍈䛾ഴ䛔䛯ග※䜢タᐃ䛧䛯䠊ᚑ䛳䛶㞟ග㠃㏆ഐ䛾䝡䞊䝮䜴䜶䝇䝖䛿༢䛻ග※఩⨨䜢䛪䜙䛧䛯ሙྜ䛸ከᑡᵝᏊ䛜␗䛺䜛䠊
1 µm 㞟ගගᏛ⣔䛻ᑐ䛧䛶⾜䛳䛯ィ⟬⤖ᯝ䜢 Fig. 4.8 䛻♧䛩䠊χBM 䛾ᙳ㡪䜢᭱䜒ཝ䛧䛟䛩䜛Ⅽ䠈X⥺䛾䜶䝛䝹䜼䞊䛿 6.5 keV 䛸䛧䛯䠊ග※䛛䜙 BM 䜎䛷䛾㊥㞳 L 䛿 100 m 䛸䛧䛯䠊๓㏙䛾㏻䜚䠈 M 2 = 1䛾㝿䛻ᐇ㝿䛾Ⓨᩓゅ䜢ྜ䜟䛫䜛䛯䜑䠈ග※䝃䜲䝈 Φ 䛻䛿ᐇ㝿䜘䜚䜒ᑠ䛥䛔 30 µm 䜢᥇⏝䛧䛯䠊䛭䛾Ⅽ㞟ගᚄ φi 䛿Ỉᖹ䠈㖄┤䛭䜜䛮䜜⣙ 500 nm䠈600 nm FWHM 䛸 1 µm 䜘䜚䜒ᑠ䛥䛟䛺䛳䛶䛔䜛䛜䠈ศゎ⬟䛾ぢ✚䜒䜚䛾㝿䛿 φi = 1 µm 䛸䛧䛶⪃䛘䛯䠊
Fig. 4.8a–d 䛿Ỉᖹ㞟ග䝭䝷䞊䠈Fig. 4.8e–h 䛿㖄┤㞟ග䝭䝷䞊䛻ᑐ䛧䛶⾜䛳䛯ィ⟬⤖ᯝ䛷䛒䜛䠊䛭䜜䛮䜜๓༙ 2 䛴䛜 ∆ 䛾䜏ᑟධ䛧䛯㝿䛾⤖ᯝ䛷䛒䜚䠈ᚋ༙ 2 䛴䛜 BM 䛾ゅᗘ䛾䜏ㄪᩚ䛧䛯㝿䛾⤖ᯝ䛷䛒䜛䠊ᘧ䠄4.3䠅䛛䜙ᗄఱಸ⋡ M 䜢⟬ฟ䛩䜛䛸䠈Ỉᖹ䠈㖄┤䛭䜜䛮䜜 78.94䠈60.75 䛸䛺䜚䠈䛔䛪䜜䜒ගᏛ㓄⨨䛛䜙ᑟฟ䛥䜜䜛ᗄఱಸ⋡䛸Ⰻ䛔୍⮴䜢♧䛧䛯䠄Fig. 4.8䠅䠊䛧䛛䛧䠈䛔䛪䜜䜒ⱝᖸ኱䛝䛺್䜢♧䛧䛶䛔䜛䠊ᮏ㞟ගගᏛ⣔䛿䝡䞊䝮䝃䜲䝈 200–300 µm FWHM 䛻ᑐ䛧䛶༑ศ኱䛝䛺㛤ཱྀ䜢᭷䛧䛶䛔䜛䠄⣙ 600 µm䠅䠊䛭䛾䜘䛖䛺ሙྜ䠈Ⅼග※䛾㞟ග఩⨨䜘䜚䜒ⱝᖸୖὶഃ䛻㞟ග䛥䜜䜛䛣䛸䛜▱䜙䜜䛶䛔䜛 [72, 73]䠊஦ᐇ䠈Fig. 4.7a 䛻䛚䛔䛶ከᑡ䛾㞟ග఩⨨䛾䛪䜜䛜☜ㄆ䛥䜜䜛䠊ᗄఱಸ⋡䛾ㄗᕪ䛿䛣䛾☜䛛䛺㞟ග㠃䛸䛿䜟䛪䛛䛻␗䛺䜛㠃䛻䛚䛔䛶⟬ฟ䛧䛯䛣䛸䛜ཎᅉ䛰䛸⪃䛘䜙䜜䜛䠊䜎䛯䠈ィ⟬⤖ᯝ䜘䜚 di < φi 4 䜢‶䛯䛩䛯䜑䛻せồ䛥䜜䜛䝇䝔䞊䝆䛾ศゎ⬟䛿 χBM 䛻ᑐ䛧䛶䛿 0.20 µrad䠈ωBM 䛻ᑐ䛧䛶
䛿 0.75 µrad 䛸ồ䜎䜚䠈ᗄఱᏛⓗ䛺ぢ✚䜒䜚䛾᭷ຠᛶ䛜ᐇド䛥䜜䛯䠊䛣䛾⤖ᯝ䛿ᘧ䠄4.3䠅䛜༑ศ‶䛯䛥䜜䜛஦䜢ព࿡䛧䛶䛚䜚䠈Ἴ㛗䜔 NA ➼䛾ἼືගᏛⓗ䛺ᛶ㉁䛿䝡䞊䝮䛾㞟ග఩⨨䛻ᑐ䛧䛶䛿䜋䛸䜣䛹ᙳ㡪䜢ཬ䜌䛥䛺䛔䠊50 nm 㞟ගගᏛ⣔䛻ᑐ䛩䜛ἼືගᏛィ⟬⤖ᯝ䜢 Fig. 4.9 䛻♧䛩䠊䛣䛾ගᏛ⣔䛿䠈Ⓨᩓゅ䛾ᑠ䛥䛺 XFEL 䛻ᑐ䛧䛶䜒኱䛝䛺 NA 䜢ᚓ䜛䛯䜑䠈1 ᗘ㞟ග䠈Ⓨᩓ䛥䛫䠈䛭䛾㞟ගⅬ䜢᪂䛯䛺ග※䛸䛧䛶䜒䛖୍ᗘ㞟ග䜢⾜䛖 2 ẁ㞟ග䝅䝇䝔䝮䛸䛺䛳䛶䛔䜛䠊䛭䜜䛮䜜䛾ᗄఱಸ⋡䜢 m1䠈m2 䛸⨨䛟䛸䠈M = m1m2 䛸䛺䜚䠈Ỉᖹ䠈㖄┤䛭䜜䛮䜜䛾ᐇຠⓗᗄఱಸ⋡䛿 1/1285䠈1/2300 䛸䛺䜛䠄Table 4.1䠅䠊ᮏගᏛ⣔䛻䛚䛔䛶䠈㞟ගⅬ㏆ഐ䛾䝡䞊䝮䜴䜶䝇䝖䛿䝭䝷䞊䛾▴ᙧ㛤ཱྀ䛾ᙳ㡪䜢ཷ䛡䠈sinc 㛵ᩘ䛻㏆䛔䝥䝻䝣䜯䜲䝹䛸
䛺䜛䠄Fig. 4.7c䠅䠊ᚑ䛳䛶䠈1 µm 㞟ගගᏛ⣔䜘䜚䜒Ἴືᛶ䛾ᙳ㡪䛜኱䛝䛔䛸⪃䛘䜙䜜䜛䠊ィ⟬䛥䜜䛯ᗄఱಸ⋡䛿Ỉᖹ䠈㖄┤䛭䜜䛮䜜 1/1329䠈1/2504 䛸䠈䜺䜴䝇䝡䞊䝮䛾㞟ගⅬ䝅䝣䝖䛾ᙳ㡪䛜ぢ䜙䜜䜛䜒䛾䛾䠈ぢ✚䜒䜙䜜䛯ᗄఱಸ⋡䛸㠀ᖖ䛻Ⰻ䛟୍⮴䛩䜛䠊ᚑ䛳䛶せồศゎ⬟䜒ᗄఱᏛⓗぢ✚䜒䜚䛸Ⰻ䛟୍⮴䛧䠈χBM䠈ωBM 䛭䜜䛮䜜 0.182 µrad䠈0.092 µrad 䛸䛺䛳䛯䠊䛯䛰䛧䠈⠇ 4.2 䛻䛚䛔䛶チᐜ䛥䜜䜛䛸䛧䛯 0.5µrad 䛾ゅᗘㄗᕪ䛻䛚䛔䛶䜒䠈㖄┤᪉ྥ䛻䛚䛔䛶䛿䝁䝬཰ᕪ䛾ᙳ㡪䛜ぢ䛶ྲྀ䜜䜛䠄Fig. 4.9g䠅䠊䛣䜜䛿䜘䜚㧗䛔 X ⥺䜶䝛䝹䜼䞊䛻䛚䛔䛶㢧ⴭ䛸䛺䜚䠈㧗⢭ᗘ䛺䜰䝷䜲䝯䞁䝖䛜せồ䛥䜜䜛䠊➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

82

Fig. 4.8.

Results of wave-optical simulations with the 1 µm focusing system at 6.5 keV.

(a)–(d) In the horizontal and (e)–(h) in the vertical directions. Panels (a), (b), (e), and (f)are results with ∆’ = 0 µrad (only positional deviation), while Panels (c), (d), (g), and (h)results with ∆ = 0 µm (only angular deviation).

4.4㻌 ᅇ㌿䝇䝔䞊䝆䛾せồศゎ⬟Fig. 4.9.

Results of wave-optical simulations with the 50 nm focusing system at 6.5 keV.

(a)–(d) In the horizontal and (e)–(h) in the vertical directions. Panels (a), (b), (e), and (f)are results with ∆’ = 0 µrad (only positional deviation), while Panels (c), (d), (g), and (h)show results with ∆ = 0 µm (only angular deviation).

83➨ 4 ❶㻌 䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ

84

4.5 ⤖ゝ㻌ᮏ❶䛻䛚䛔䛶䠈ศ๭䝡䞊䝮䛾✵㛫ⓗ㔜」䜢┠ᣦ䛧䠈䜰䝷䜲䝯䞁䝖ᡭἲ䜢᳨ウ䛧䛯䠊ᗄఱᏛⓗ䛺どⅬ䛛䜙 X ⥺䛾㞟ග䜢᳨ウ䛧䠈䜰䝷䜲䝯䞁䝖ㄗᕪ䛻䜘䛳䛶⏕䛨䜛 upper 䝡䞊䝮䛾఩⨨䠈ゅᗘㄗᕪ䛸䠈㞟ග఩⨨䛾ኚ఩㔞䛸䛾┦㛵䜢⤖䜃䛴䛡䛯䠊䛭䛧䛶ᗄఱᏛ䠈ග⥺㏣㊧ィ⟬䜢⏝䛔䛶䠈ྛᅇ㌿䝇䝔䞊䝆䛻ồ䜑䜙䜜䜛ゅᗘศゎ⬟䜢ᑟฟ䛧䛯䠊ἼືගᏛィ⟬䛻䜘䛳䛶䠈ᗄఱᏛⓗ䛺ぢ✚䜒䜚䛾ṇ䛧䛥䜢ᐇド䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) ග※䛾⤖ീ䛻ᇶ䛵䛟 X ⥺㞟ගගᏛ⣔䛻䛚䛔䛶䠈ග※䛾ኚ఩䛸㞟ගⅬ䛾ኚ఩䛜ᗄఱಸ⋡䛻䜘䛳䛶᥋⥆䛥䜜䛶䛔䜛஦䜢♧䛧䠈䜰䝷䜲䝯䞁䝖ㄗᕪ䛸⤖䜃䛴䛡䛯䠊(2) SACLA 䛻ᖖタ䛥䜜䛶䛔䜛㞟ගගᏛ⣔䛻㛵䛧䛶᳨ウ䜢⾜䛔䠈upper 䝡䞊䝮䛾఩⨨䜢 15 µm䠈ゅᗘ䜢 0.15 µrad ௨ୗ䛾⢭ᗘ䛷ㄪᩚ䛩䜛ᚲせ䛜䛒䜛஦䜢ᑟ䛝ฟ䛧䛯䠊䜎䛯䠈䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䜢
㜵䛠Ⅽ䠈఩⨨䠈ゅᗘㄗᕪ䛾⤯ᑐ್䜢䛭䜜䛮䜜 125 µm䠈1.25 µrad ௨ୗ䛻ㄪᩚ䛩䜛ᚲせ䛜䛒䜛஦䜢♧䛧䛯䠊(3) 䛒䜙䜖䜛ゅᗘㄗᕪ䛾ᙳ㡪䜢᳨ウ䛧䠈ᚲせ᭱ప㝈䛾ㄪᩚ㍈ᩘ䛻䜘䜛䜰䝷䜲䝯䞁䝖ᡭἲ䜢㛤Ⓨ䛧䛯䠊ලయⓗ䛻䛿䠈BM ⤖ᬗ⾲㠃䛻䛚䛡䜛ศ๭䝡䞊䝮㛫䛾఩⨨䛪䜜䜢⿵ṇ䛩䜛Ⅽ䛻 BS 䛾 χ䠈2θ2 䜢ㄪᩚ䛧䠈ゅᗘ䝭䝇䝬䝑䝏䛾ᢚไ䛾䛯䜑䛻䠈BM ⤖ᬗ䛾䜏䜢ㄪᩚ䛧䛯䠊(4) ᗄఱᏛ䛻ᇶ䛵䛝䠈ྛゅᗘㄗᕪ䛾ᙳ㡪䜢ᩘᘧ໬䛧䠈せồศゎ⬟䜢ᑟฟ䛧䛯䠊᭱䜒ཝ䛧䛔ㄪᩚ㍈䛿ωBM 䛷䛒䜚䠈0.075 µrad 䛾ศゎ⬟䛜せồ䛥䜜䛯䠊(5) 䛒䜙䜖䜛ゅᗘㄗᕪ䛾ᙳ㡪䜢༶ᗙ䛻ホ౯ྍ⬟䛺ග⥺㏣㊧ィ⟬䛾ᗙᶆ⣔䜢⪃᱌䛧䠈ᗄఱᏛ䛻䜘䜛ぢ✚䜒䜚䛸Ⰻ䛟୍⮴䛩䜛せồศゎ⬟䜢ᑟฟ䛧䛯䠊䜎䛯䠈BR ⤖ᬗ䛾⛣ື㍈ゅᗘ䛷䛒䜛 2θ1䠈2θ2 䛜X ⥺䛾ᩓ஘ゅ 2θB 䛸␗䛺䜛ሙྜ䠈㐜ᘏ᫬㛫䛾⤯ᑐ᫬㛫⢭ᗘ䛻኱䛝䛺ᙳ㡪䜢୚䛘䜛஦䜢♧䛧䛯䠊(6) ἼືගᏛィ⟬䜢⾜䛔䠈ග䛾Ἴືᛶ䛾ཬ䜌䛩ᙳ㡪䜢ㄪᰝ䛧䛯䠊䜺䜴䝇䝡䞊䝮䛾㞟ගⅬ䝅䝣䝖䛾ᙳ㡪䛜ከᑡ䛒䜛䜒䛾䛾䠈ᇶᮏⓗ䛻䛿ᗄఱᏛⓗ䛺どⅬ䛻ᚑ䛖஦䜢ᐇド䛧䛯䠊(7) 50 nm 㞟ගගᏛ⣔䛾䜘䛖䛺䠈䝘䝜䝯䞊䝖䝹䜸䞊䝎䞊䜈䛾㞟ග䛾㝿䛿䠈཰ᕪ䛾ᙳ㡪䛻䜘䛳䛶䠈䜘䜚㧗䛔䜰䝷䜲䝯䞁䝖⢭ᗘ䛜せồ䛥䜜䜛஦䜢♧䛧䛯䠊➨5❶ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂
5.1 ⥴ゝ㻌ᮏ❶䛻䛚䛔䛶䠈SPring-8 䜔 SACLA 䛻䛚䛔䛶ᐇ᪋䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂䛻㛵䛧䛶⤂௓䛩䜛䠊SPring-8 䛻䛚䛔䛶ศ๭䝡䞊䝮䛾✵㛫ⓗ㔜」䜈ྥ䛡䛯䜰䝷䜲䝯䞁䝖ᡭ㡰䛾☜ㄆ䜔䝇䝹䞊䝥䝑䝖䠈䝡䞊䝮䝥䝻䝣䜯䜲䝹➼䜢ホ౯䛧䛯䠊䛭䛧䛶 SACLA 䛻䛚䛔䛶䠈ศ๭䞉㐜ᘏගᏛ⣔䜢⏝䛔䛯᫬㛫ศゎᐇ㦂ᐇ⌧䜈ྥ䛡䛯ྛ✀䝟䝷䝯䞊䝍デ᩿䛾ᐇ⌧ྍ⬟ᛶ䛾᳨ウ䜢⾜䛳䛯䠊䜎䛯䠈ྛศ๭䝡䞊䝮䛾㞟ග≉ᛶ䜢ホ౯䛧䛯䠊

5.2 SPring-8 䛻䛚䛡䜛ᛶ⬟ホ౯㻌
5.2.1 ᐇ㦂㓄⨨㻌
SPring-8 BL29XUL 䛻ศ๭䞉㐜ᘏගᏛ⣔䜢ᵓ⠏䛧䠈10 keV 䛾 X ⥺䜢⏝䛔䛶ᛶ⬟ホ౯ᐇ㦂䜢⾜䛳䛯䠊ⷧ䛔⤖ᬗ䛻䛿 BS 䛸䛧䛶 SM05 䜢䠈BM 䛸䛧䛶 SM04 䜢⏝䛔䛯䠊ᐇ㦂㓄⨨䜢 Fig. 5.1 䛻♧䛩䠊Si(111) DCM 䛻䜘䛳䛶༢Ⰽ໬䛥䜜䛯 X ⥺䜢䜰䞁䝆䝳䝺䞊䝍ฟཱྀ䛛䜙⣙ 52 m ୗὶ䛻㓄⨨䛧䛯 4 ㇟㝈䝇䝸䝑䝖䛻䜘䜚 10 µm × 10 µm䠄H × V䠅䛻ษ䜚ฟ䛧䠈௬᝿ග※䛸䛧䛶⏝䛔䛯䠊௬᝿ග※䛛䜙⣙ 9 m ୗὶ䛻ศ๭䞉㐜ᘏගᏛ⣔䜢㓄⨨䛧䛯䠊BS䠈BM 㛫䛾㊥㞳 l0 䛿 0.97 m 䛸䛧䠈ᴟⷧ⤖ᬗ䛸ཌ䛔⤖ᬗ㛫䛾㊥㞳
D 䛿䜋䜌᭱኱್䛾 125 mm 䛸䛩䜛䛣䛸䛷䠈䜰䝷䜲䝯䞁䝖せồ⢭ᗘ䛾ཝ䛧䛔᮲௳䛸䛧䛯䠊䛣䛣䛷 upper䠈
lower 䝡䞊䝮䛾䝇䝨䜽䝖䝹୰ᚰ䛿 10 keV 䛛䜙䛭䜜䛮䜜±0.35 eV 䛪䜙䛧䛯䠄☜䛛䛺 Bragg ゅ䛛䜙䛭䜜䛮䜜 ∓ 12 µrad䠊BM ⤖ᬗ䛾ୗὶ⣙ 7 m䠈37 m 䛾఩⨨䛻 2 䛴䛾 CCD 䜢㓄⨨䛧䛯䠄CCD1䠈
HAMAMATSU䠈ORCA-RII䠈3.1 µm/pixel䠗CCD2䠈BITRAN䠈CS-52M䠈1.25 µm/pixel䠅䠊䛣䜜䜙 2 䛴
䛾 CCD 䛻䜘䜚ศ๭䝡䞊䝮㛫䛾఩⨨䠈ゅᗘㄗᕪ䛷䛒䜛 ∆ 䛸 ∆’䜢ぢ✚䜒䛳䛯䠊䛣䛾᫬䠈䛭䜜䛮䜜䛾䝡䞊85

➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂

86Fig. 5.1.

Experimental setup for performance test at BL29XUL of SPring-8.
Ion chambers were used as BIMs (beam intensity monitors).

䝮఩⨨䛿ᙉᗘศᕸ䛾㔜ᚰ䛸ᐃ⩏䛧䛯䠊䛭䛧䛶௬᝿ග※䛛䜙⣙ 47 m ୗὶ䛻䛒䜛㞟ග䝭䝷䞊ගᏛ⣔[74] 䛻䜘䛳䛶୧ศ๭䝡䞊䝮䜢㞟ග䛧䛯䠊䝭䝷䞊䛾㛤ཱྀ䜢እ䜜䜛 X ⥺䜢ྲྀ䜚㝖䛟Ⅽ䠈⣙ 1 m ୖὶ䛻 Wf x , z~ 180 µm × 380 µm䠄H × V䠅䛾䝭䝷䞊㛤ཱྀ䝇䝸䝑䝖䜢タ䛡䛯䠊ศ๭䞉㐜ᘏගᏛ⣔䜘䜚ୗὶ䛾⣲Ꮚ䠈᳨ฟჾ➼䛿඲䛶 lower 䝡䞊䝮ᇶ‽䛷㓄⨨䠈ㄪᩚ䛥䜜䛯䠊౑⏝䛧䛯㞟ගගᏛ⣔䛾ᗄఱಸ⋡䛿Ỉᖹ䠈㖄┤䛭䜜䛮䜜~ 1/310䠈1/190 䛷䛒䜚䠈ග※䝃䜲䝈䛛䜙ᗄఱᏛⓗ䛻㞟ග䝃䜲䝈䜢ぢ✚䜒䜛䛸~ 30 nm × 50 nm䠄H × V䠅FWHM 䛸䛺䜛䠊䛧䛛䛧ᐇ䛥䜜䛯 lower䝡䞊䝮䛾㞟ග䝃䜲䝈䛿䝭䝷䞊䛾 NA 䛻䜘䜛ไ㝈䛻䜘䛳䛶~ 200 nm × 150 nm䠄H × V䠅FWHM 䛸䛺䛳䛯䠊䛯䛰䛧䠈䛣䛾ሙྜ䛻䛚䛔䛶䜒ᘧ䠄4.2䠅䛸䠄4.3䠅䛿‶䛯䛥䜜䜛䛯䜑䠈ᐇ䛾㞟ග䝃䜲䝈䜢 φi 䛸⪃䛘ᐇ㦂䜢⾜䛳䛯䠊ᚑ䛳䛶䠈ᘧ䠄4.6䠅䛛䜙せồศゎ⬟ δ∆ x , z 䠈 δ∆ 'x , z 䛿䛭䜜䛮䜜 15 µm × 7.5 µm䠈1.6 µrad × 0.8µrad䠄H × V䠅䛸䛺䜚䠈ᵓ⠏䛧䛯䝇䝔䞊䝆⣔䛻䜘䜚‶䛯䛥䜜䜛䠊୍᪉䛷䠈ᘧ䠄4.9䠅䛛䜙⤯ᑐ⢭ᗘ䛸䛧䛶| ∆ x , z |< 9.0 µm × 19 µm䠄H × V䠅䠈| ∆ 'x , z | < 1.0 µrad × 2.0 µrad䠄H × V䠅䜒‶䛯䛩ᚲせ䛜䛒䜛䠊

5.2.2 䜰䝷䜲䝯䞁䝖㻌ᮏ⠇䛻䛚䛔䛶䠈㞟ග㠃䛻䛚䛡䜛ศ๭䝡䞊䝮䛾✵㛫㔜」䜢┠ᣦ䛧䛯䜰䝷䜲䝯䞁䝖㐣⛬䛸⤖ᯝ䜢♧䛩䠊ྛගᏛ⣲Ꮚ䛾఩⨨ㄪᩚ䛺䜙䜃䛻 ω ㄪᩚᚋ䠈CCD1 䛻䛚䛔䛶ศ๭䝡䞊䝮㛫䛾኱䛝䛺㖄┤᪉ྥ఩⨨ㄗᕪ䛜☜ㄆ䛥䜜䛯䠄Fig. 5.2a䠈b䠅䠊䛣䜜䛿 2θ1 䛸 2θ2 䛸䛾㛫䛻ゅᗘᕪ䛜䛒䜛䛣䛸䜢♧䛧䛶䛔䜛䠊ᚑ䛳䛶䠈䜎䛪 2θ2 䛾ㄪᩚ䜢⾜䛳䛯䠊䛣䛾᫬䠈BM ⤖ᬗ䛾⤖ᬗᛶ䛻䜘䜛ᙳ㡪䜢㑊䛡䜛Ⅽ䠈ᖹᯈ䛷䛒䜛䝎䝭䞊⤖ᬗ䜢⏝䛔䛯䠊 δ 2θ 2 䛻ᑐ䛧䛶 upper 䝡䞊䝮䛾 z ఩⨨䛿⥺ᙧ䛻ᛂ⟅䛧䠈䛭䛾ഴ䛝䛿−0.227 ± 0.003 mm/mrad䛷䛒䛳䛯䠊䛣䜜䛿ග⥺㏣㊧ィ⟬䛻䜘䛳䛶ᚓ䜙䜜䜛−0.224 mm/mrad 䛸㠀ᖖ䛻Ⰻ䛟୍⮴䛧䠈ග⥺㏣㊧ィ

5.2㻌 SPring-8 䛻䛚䛡䜛ᛶ⬟ホ౯

Fig. 5.2.

87

Results of positional correction in the vertical direction with adjustment of 2θ2.

Scale bar shows 0.2 mm. Positions of the lower beam (a) and the upper beam at δ 2θ 2 = 0(b), +2.44 (c), and +5.24 mrad (d). (e) Vertical offset as a function of δ 2θ 2 .

⟬䛻䜘䜛᳨ウ䛾᭷ຠᛶ䛜♧䛥䜜䛯䠊
BS䠈BM ⤖ᬗ䛾 χ 䜢ㄪᩚ䛧䠈Ỉᖹ᪉ྥ䛾䝡䞊䝮఩⨨䜢⣙ 50 µm䠈ゅᗘㄗᕪ䜢ᩘ µrad 䛻䜎䛷ᢚไ䛧䛯ᚋ䠈㞟ග఩⨨䜢☜ㄆ䛧䛺䛜䜙 BM ⤖ᬗ䛾ゅᗘㄪᩚ䛾䜏䛻䜘䛳䛶㞟ග㠃䛻䛚䛡䜛✵㛫㔜」䜢ヨ䜏䛯䠊䛭䛾㝿䠈upper 䝡䞊䝮䛾኱䛝䛺ᙉᗘపୗ䛜䝭䝷䞊ୗὶ䛻䛚䛔䛶☜ㄆ䛥䜜䛯䠊䛣䜜䛿๓㡯䛻䛚䛔䛶♧䛧䛯⤯ᑐ⢭ᗘ䛸䛧䛶䛾┠ᶆ್䜢‶䛯䛫䛶䛔䛺䛛䛳䛯Ⅽ䠈㛤ཱྀไ㝈䝇䝸䝑䝖䛻䜘䛳䛶኱䛝䛺䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䛜⏕䛨䛯䜒䛾䛸⪃䛘䜙䜜䜛䠊䛣䛣䛷䠈➨ 4 ❶䛷㏙䜉䛯䜘䛖䛻䠈ៅ㔜䛺 ω 䛾ㄪᩚ䛻䜘䛳䛶|∆’z| 䛿 1–2 µrad 䛻ᢚไྍ⬟䛷䛒䜛䠊ᚑ䛳䛶䠈2θ2 䛾ᚤㄪᩚ䛸䛭䜜䛻క䛖 ω 䛾෌ㄪᩚ䛻䜘䛳䛶䝭䝷䞊㛤ཱྀ䝇䝸䝑䝖䛾䛩䛠ୗὶ䛻఩⨨䛩䜛 BIM6 䛻䛚䛡䜛ᙉᗘ䜢᭱኱໬䛩䜛䛣䛸䛷䠈఩⨨䠈ゅᗘඹ䛻㧗⢭ᗘ䛻ㄪᩚྍ⬟䛷䛒䛳䛯䠊ᮏ㡯䛷䛿௨㝆䠈୺䛻Ỉᖹ᪉ྥ䛻㛵䛧䛶㆟ㄽ䛩䜛䠊ᮏ䝉䝑䝖䜰䝑䝥䛻䛚䛔䛶 2 䛴䛾 CCD 㛫䛾㊥㞳䛜⣙ 30 m 䛒䜛䛣䛸䛛䜙Ỉᖹ᪉ྥ䛻㛵䛧䛶䜒 ∆’䜢 1µrad ௨ୗ䛻ㄪᩚ䛩䜛䛣䛸䛿ẚ㍑ⓗᐜ᫆䛻㐩ᡂ䛥䜜䜛䛜䠈∆x 䛾᭦䛺䜛ᢚไ䛿䝡䞊䝮䝃䜲䝈䛜 200–300µm FWHM 䛷䛒䜛䛣䛸䛛䜙ᅔ㞴䛷䛒䜛䠊䛣䛣䛷䠈χBS 䛸 χBM 䛸䜢཯ᑐ᪉ྥ䛻ྠ㔞ᅇ㌿䛥䛫䜛䛣䛸䛷䠄౛䛘䜀 χBS +1 µrad䠈χBM −1 µrad䠅䠈upper 䝡䞊䝮䛾ゅᗘ䜢ኚ໬䛥䛫䜛䛣䛸䛺䛟䝡䞊䝮఩⨨䛾䜏䜢ㄪᩚ䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊௨ᚋ䛣䛾䝥䝻䝉䝇䜢䇾䝟䝷䝺䝹䝅䝣䝖䇿䛸࿧䜆䠊௬䛻ศ๭䝡䞊䝮㛫䛻ゅᗘ䝭䝇䝬䝑䝏䛜↓䛔䛸䛩䜛䛸䠈䝟䝷䝺䝹䝅䝣䝖䛻䜘䛳䛶✵㛫㔜」䜢㐩ᡂ䛩䜛䛣䛸䛷䠈∆x䠈∆’x ඹ䛻 0 䛸䛩䜛䛣䛸䛜ฟ᮶䜛䠊䝟䝷䝺䝹䝅䝣䝖䜢⾜䛳䛯㝿䛾㞟ග䝥䝻䝣䜯䜲䝹䛾ኚ㑄䜢 Fig. 5.3 䛻♧䛩䠊ゅᗘ䛾ㄪᩚ䛸ẚ䜉䠈ᙉᗘ䛾పୗ䜢ᢚ䛘䜛஦䛻ᡂຌ䛧䛯䠊䛧䛛䛧䠈㔜」᫬䛾ᙉᗘ䛿౫↛䛸䛧䛶᭱኱್䛾༙ศ௨ୗ䛸䛺䛳䛯䠊➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂

88Fig. 5.3.

Transition of horizontal focal profile during the ‘parallel shift’. The positionof the lower beam is set as 0.

᭦䛺䜛ㄗᕪ䛾ᢚไ䜢┠ᣦ䛧䠈௨ୗ䛻♧䛩䜘䛖䛺཯᚟ᡭἲ䜢ヨ䜏䛯䠊䜎䛪䠈䝡䞊䝮ゅᗘㄪᩚ䛻䜘䛳䛶 BIM6 䛻䛚䛡䜛ᙉᗘ䜢᭱኱໬䛥䛫䜛䠊䛣䛾᫬䠈upper 䝡䞊䝮䛿䝭䝷䞊㛤ཱྀ䝇䝸䝑䝖䛾୰ᚰ䜢㏻䛳䛶䛔䜛䛸௬ᐃ䛷䛝䜛䠊䛭䛧䛶䝟䝷䝺䝹䝅䝣䝖䛻䜘䛳䛶㞟ග㠃䛻䛚䛔䛶ศ๭䝡䞊䝮ྠኈ䜢✵㛫ⓗ䛻㔜」䛥䛫䜛䠊䛣䜜䜙 2 䛴䛾䝥䝻䝉䝇ᚋ䛾䝡䞊䝮఩⨨䠈ゅᗘㄗᕪ䛿௨ୗ䛾䜘䛖䛻⪃䛘䜙䜜䜛䠊

 L
∆ x ~ ∆ 0x  −  Lf 
∆ 0x∆ 'x ~ −Lf(5.1)

䛣䛣䛷 ∆0x 䛿䝥䝻䝉䝇๓䛾䝡䞊䝮఩⨨ㄗᕪ䛷䛒䜚䠈Lf 䛸䛧䛶 BM 䛛䜙䝭䝷䞊㛤ཱྀ䝇䝸䝑䝖䜎䛷䛾㊥㞳䠄~
38 m䠅䜢⏝䛔䛯䠊ᮏ䝉䝑䝖䜰䝑䝥䛾䜘䛖䛻䠈L < Lf 䛾ሙྜ䠈䝥䝻䝉䝇䛾཯᚟䛻䜘䛳䛶఩⨨䠈ゅᗘㄗᕪ䛜ඹ䛻ᢚไ䛥䜜䜛䛣䛸䛜ᮇᚅ䛷䛝䜛䠊
2 ᅇ཯᚟ᚋ䛾Ỉᖹ᪉ྥ㞟ග䝥䝻䝣䜯䜲䝹䛺䜙䜃䛻┤ᚋ䛻ᐃ䛥䜜䛯㖄┤᪉ྥ㞟ග䝥䝻䝣䜯䜲䝹䜢 Fig. 5.4 䛻♧䛩䠊䛔䛪䜜䛾᪉ྥ䛻㛵䛧䛶䜒⣙ 30 nm 䛾⢭ᗘ䛷✵㛫㔜」䜢㐩ᡂ䛧䛯䠊䛣䛾㝿䛾䝭䝷䞊

5.2㻌 SPring-8 䛻䛚䛡䜛ᛶ⬟ホ౯

Fig. 5.4.

89

Focal profiles after fine adjustments. (a) Horizontal and (b) vertical focal

profiles. Black, red, and blue points show profiles of double beams, the upper beam, andthe lower beam, respectively.

ୗὶ䛻䛚䛡䜛 upper 䝡䞊䝮䛾ᙉᗘ䛿䜋䜌᭱኱್䛸୍⮴䛧䛯䠊CCD 䛻䜘䜚ྲྀᚓ䛧䛯䝥䝻䝣䜯䜲䝹䛛䜙䠈|∆| 䛿୧᪉ྥ䛸䜒 10 µm ௨ୗ䠈|∆’| 䛿 0.1 µrad × 0.3 µrad䠄H × V䠅௨ୗ䜎䛷ᢚไ䛥䜜䛯஦䜢☜ㄆ䛧䛯䠊௒ᅇ䠈L 䛜⣙ 10 m 䛸ẚ㍑ⓗᑠ䛥䛛䛳䛯Ⅽ䠈CCD 䛻䜘䜛⢒ㄪᩚ䛻㧗䛔⢭ᗘ䛜せồ䛥䜜䛯䠄≉䛻䝡䞊䝮఩⨨䠅䠊䛭䛣䛷䝟䝷䝺䝹䝅䝣䝖䜔཯᚟䝥䝻䝉䝇➼䛾ᡭἲ䜢⏝䛔䛶㧗⢭ᗘ䛺✵㛫㔜」䜢㐩ᡂ䛧䛯䜒
䛾䛾䠈XFEL ᪋タ䛻䛚䛔䛶 L 䛿 100 m ௨ୖ䛸኱䛝䛟䠈➨ 4 ❶䛷䛾グ㏙䛾㏻䜚䠈䜘䜚䝅䞁䝥䝹䛺䜰䝷䜲䝯䞁䝖ᡭ㡰䛻䜘䛳䛶✵㛫㔜」䛜㐩ᡂ䛥䜜䜛䛸⪃䛘䜙䜜䜛䠊

5.2.3 㐜ᘏ᫬㛫ㄪᩚ䛾ᙳ㡪ホ౯㻌ᮏ㡯䛻䛚䛔䛶䠈㐜ᘏ᫬㛫䜢ㄪᩚ䛧䛯㝿䛾┤㐍䝇䝔䞊䝆䛾ጼໃኚ໬䛻㛵䛧䛶ሗ࿌䛩䜛䠊┤㐍䝇䝔䞊䝆䛻䜘䜛⛣ື䛾㝿䠈㍈䛾ṍ䜏䛻⏤᮶䛩䜛ጼໃኚ໬䛜⏕䛨䜛䠊䛔䜟䜖䜛䝢䝑䝏䞁䜾䠈䝶䞊䜲䞁䜾䠈䝻䞊䝸䞁䜾䛷䛒䜛䠊䛣䛣䛷䠈䝶䞊䜲䞁䜾䛜 ω䠈䝻䞊䝸䞁䜾䛜 χ 䛻┦ᙜ䛩䜛䠊ᮏගᏛ⣔䛾䜘䛖䛻䝘䝜䝷䝆䜰䞁䜸䞊
䝎䞊䛾ゅᗘ⢭ᗘ䛜せồ䛥䜜䜛ගᏛ⣔䛻䛚䛔䛶䠈䛣䜜䜙䛾ጼໃኚ໬䛿㔜኱䛺䜰䝷䜲䝯䞁䝖ㄗᕪ䛾せᅉ䛸䛺䜚ᚓ䜛䠊
ጼໃኚ໬䛾ᙳ㡪䜢☜ㄆ䛩䜛Ⅽ䠈㐜ᘏ᫬㛫䜢ኚ᭦䛧䛯㝿䛾 upper 䝡䞊䝮䛾ᙉᗘ䠈㞟ග఩⨨䜢ㄪᰝ䛧䛯䠊㐜ᘏ᫬㛫䜢 1 ps ኚ໬䠄∆D = 0.72 mm䠅䛥䛫䛯㝿䛾㞟ග䝥䝻䝣䜯䜲䝹䜢 Fig. 5.5 䛻♧䛩䠊䜟䛪䛛➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂90Fig. 5.5.

Focal profiles after small change of delay time of 1 ps.
(a) Horizontal and (b) vertical focal profiles.

Fig. 5.6.

Horizontal focal profiles after large change of delay time (> 10 ps).

1 ps 䛾ㄪᩚ䛻䛚䛔䛶䜒䠈upper 䝡䞊䝮䛾ᙉᗘ䛿⃭ῶ䛧䠈㖄┤᪉ྥ㞟ග఩⨨䛾኱䛝䛺ኚ఩䛜☜ㄆ䛥䜜
䛯䠄Fig. 5.5b䠅䠊䛯䛰䛧䠈Ỉᖹ᪉ྥ䛻䛚䛔䛶䛿㞟ග఩⨨䛾ኚ໬䛿䜋䛸䜣䛹☜ㄆ䛥䜜䛺䛛䛳䛯䠊䛣䛾⤖ᯝ䜘䜚䠈䝇䝔䞊䝆䛾⛣ື䛻䜘䜚 BR ⤖ᬗ䛾 ω 䛜኱䛝䛟䛪䜜䛯䛣䛸䛜♧၀䛥䜜䛯䠄䝶䞊䜲䞁䜾䠅䠊BR ⤖ᬗ䛾 ω 䜢䠈Bragg ᮲௳䜢‶䛯䛩䜘䛖෌ㄪᩚ䛧䛯䛸䛣䜝䠈ᙉᗘ䠈㞟ග఩⨨䛸䜒䛻ᅇ᚟䛧䛯䠊ᚑ䛳䛶䠈1 ps ⛬ᗘ䛾ᑠ䛥䛺㐜ᘏ᫬㛫ㄪᩚ䛷䛒䜜䜀䠈㎿㏿䛻෌ㄪᩚ䛜ྍ⬟䛷䛒䜛䛣䛸䛜♧䛥䜜䛯䠊

5.2㻌 SPring-8 䛻䛚䛡䜛ᛶ⬟ホ౯91኱䛝䛟㐜ᘏ᫬㛫䜢ㄪᩚ䛧䛯㝿䛻䛿䠄∆D = 10 mm䠅䠈Ỉᖹ᪉ྥ䛻䜒㞟ග఩⨨䛾ኚ఩䛜☜ㄆ䛥䜜䛯
䠄Fig. 5.6䠅䠊௒ᅇ䛾䝉䝑䝖䜰䝑䝥䛻䛚䛔䛶䛿 L 䛜ᑠ䛥䛔䛣䛸䛛䜙䠈Ỉᖹ᪉ྥ䛾෌ㄪᩚ䛻䛿཯᚟䝥䝻䝉䝇䜢⾜䛖ᚲせ䛜䛒䜚䠈᫬㛫䜢せ䛩䜛䠊䛧䛛䛧䠈XFEL 䛻䛚䛔䛶䛿 BM ⤖ᬗ䛾 χ 䜢ㄪᩚ䛩䜛䛰䛡䛷༶ᗙ䛻✵㛫㔜」䛾ᅇ᚟䛜ྍ⬟䛰䛸⪃䛘䜙䜜䜛䠊

5.2.4 䝇䝹䞊䝥䝑䝖䛾ホ౯㻌Fig. 5.7.

Comparison of beam profiles measured with CCD2. Two-dimensional profilesof the incident beam (a), the lower beam (b), and the upper beam (c). (d) Line profiles inthe vertical direction at a horizontal position of 0.

➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂

92

BIM5 䛸 BIM0 䜢⏝䛔䛶ศ๭䞉㐜ᘏගᏛ⣔䛾ྛ㐜ᘏ䝟䝇䛾䝇䝹䞊䝥䝑䝖䜢ホ౯䛧䛯䠊䛣䛾᫬䠈
SACLA 䛾᮲௳䛸㏆䛵䛡䜛䛯䜑㖄┤᪉ྥ䛾 VS 䝇䝸䝑䝖ᖜ䜢 30 µm 䛸䛧䠈ධᑕග䛾Ⓨᩓゅ䜢⣙ 1.8 µrad
FWHM 䜎䛷పῶ䛥䛫䛯䠊䝇䝹䞊䝥䝑䝖䛿 upper 䝟䝇䠈lower 䝟䝇䛭䜜䛮䜜 12.6%䛸 13.8%䛷䛒䜚䠈ィ⟬್䛷䛒䜛 28.8%䠈19.4%䜘䜚䜒ప䛔್䛸䛺䛳䛯䠊䛣䛣䛷 CCD2 䛻䛚䛔䛶ྲྀᚓ䛥䜜䛯䝡䞊䝮䝥䝻䝣䜯䜲䝹䛾ẚ㍑䜢 Fig. 5.7 䛻♧䛩䠊ධᑕ䝡䞊䝮䛿୰ᚰ㒊䛛䜙እ䜜䛯㡿ᇦ䛻ẚ㍑ⓗᙉ䛔ᐤ⏕ᵓ㐀䜢᭷䛧䛶䛔䜛䛣䛸䛜☜ㄆ䛥䜜䛯䠄Fig. 5.7a䠅䠊䛭䛾䜘䛖䛺ᐤ⏕ᵓ㐀䛿 lower 䝡䞊䝮䝥䝻䝣䜯䜲䝹䛻䛿☜ㄆ䛥䜜䛺䛔
䠄Fig. 5.7b䠅䠊ᐤ⏕ᵓ㐀䛾඲య䛻ᑐ䛩䜛ᙉᗘẚ䛿⣙ 30%䛷䛒䜚䠈lower 䝟䝇䛾䝇䝹䞊䝥䝑䝖䛾ィ⟬್䛛䜙䛾ῶᑡ㔞䛸୍⮴䛩䜛䠊XFEL 䛿 TEM00 䝰䞊䝗䛻㏆䛔✵㛫䠄ゅᗘ䠅䝥䝻䝣䜯䜲䝹䜢᭷䛧䛶䛔䜛䛯䜑䠈
lower 䝟䝇䛾䝇䝹䞊䝥䝑䝖䛿䜋䜌ィ⟬್䛹䛚䜚䛻䛺䜛䛣䛸䛜ᮇᚅ䛥䜜䜛䠊୍᪉䛷䠈upper 䝡䞊䝮䛿ධᑕ䝡䞊䝮䠈lower 䝡䞊䝮䛸ẚ䜉኱䛝䛟Ⓨᩓ䛧䛶䛔䛯䠄Fig. 5.7c䠅䠊䛣䜜䛿ᴟⷧ⤖ᬗ䛾᱁Ꮚ㠃䛜‴᭤䛧䛶䛔䜛Ⅽ䛰䛸⪃䛘䜙䜜䜛䠊䛣䛾䜘䛖䛺᱁Ꮚ㠃䛾‴᭤䛿ᅇᢡຠ⋡䛾పୗ䜢ᣍ䛝䠈䝇䝹䞊䝥䝑䝖పୗ䛾୺䛺せᅉ䛸䛺䛳䛶䛔䜛䛸⪃䛘䜙䜜䜛䠊௨ୖ䛾䜘䛖䛻ㄢ㢟䛿䛒䜛䜒䛾䛾䠈ᚓ䜙䜜䛯䝇䝹䞊䝥䝑䝖䛿 Roseker 䜙䛻䜘䜛ศ๭䞉㐜ᘏගᏛ⣔䜘䜚
䜒 10 ಸ௨ୖ㧗䛔䠊᪤䛻௒ᅇ䛾ホ౯䛻⏝䛔䛯ᴟⷧ⤖ᬗ䜘䜚䜒ᅇᢡ≉ᛶ䛾㧗䛔⤖ᬗ䛾స〇䛻䜒ᡂຌ䛧䛶䛚䜚䠈௒ᚋ䜘䜚ィ⟬್䛻㏆䛔䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䜛䛣䛸䛜ᮇᚅ䛥䜜䜛䠊

5.2.5 Ⓨᩓゅኚ໬䛻䜘䜛㞟ග䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪㻌๓㡯䛷䛾グ㏙䛾㏻䜚䠈upper 䝡䞊䝮䛾Ⓨᩓゅ䛿ධᑕ䝡䞊䝮䜔 lower 䝡䞊䝮䛻ᑐ䛧䛶⣙ 2.4 ಸ䛸䛺䛳䛶䛔䛯䠊䛣䛾䜘䛖䛺Ⓨᩓゅ䛾ᣑ኱䛿䝇䝹䞊䝥䝑䝖䛾పୗ䛰䛡䛷䛺䛟䠈ᐇຠⓗ䛺ග※఩⨨䛾ග㍈᪉ྥ䛾ኚ఩䜢䜒䛯䜙䛩䠊ྠᵝ䛻㞟ග఩⨨䜒ග㍈᪉ྥ䛻䛪䜜䠈䝃䞁䝥䝹䛜㓄⨨䛥䜜䜛 lower 䝡䞊䝮䛾㞟ග㠃䛻䛚䛔䛶䛿䝕䝣䜷䞊䜹䝇䛸䛺䜛䛣䛸䛜ண᝿䛥䜜䜛䠊ᐇ㝿䛻䠈㖄┤᪉ྥ䛾㞟ග䝥䝻䝣䜯䜲䝹䜢☜ㄆ䛩䜛䛸 lower 䝡䞊䝮䛜⣙ 150 nm FWHM 䛷䛒䜛䛾䛻ᑐ䛧䠈upper 䝡䞊䝮䛿⣙ 310 nm FWHM 䛸䛺䛳䛶䛔
䛯䠄Fig. 5.4b䠅䠊
Ⓨᩓゅኚ໬䛾ᙳ㡪䜢⡆༢䛻ぢ✚䜒䜛䠊BM ⤖ᬗ䛻䜘䛳䛶Ⓨᩓゅ䛜 N ಸ䛻䛺䛳䛯䛸௬ᐃ䛩䜛䠊䛣䜜䛿Ἴ㠃䛾᭤⋡䛜 1/N 䛻䛺䛳䛯䛣䛸䛻┦ᙜ䛩䜛Ⅽ䠈ග※䛸䛾㊥㞳䜒 1/N 䛻䛺䜛䛸⪃䛘䜙䜜䜛䠊ᚑ䛳䛶ᐇຠⓗ䛺ග※㊥㞳䜢 L’䛸⨨䛟䛸䠈L' ≈ L N

䛸䛺䜛䠊䛣䛣䛷䠈Ⓨᩓゅኚ໬ᚋ䛾㞟ගගᏛ⣔䛻ᑐ䛩䜛ග※㊥㞳 a’䛿

(5.2)

5.2㻌 SPring-8 䛻䛚䛡䜛ᛶ⬟ホ౯

93a ' = L '+ LMS(5.3)

䛸⨨䛡䜛䛯䜑䠈L/LMS 䛾኱䛝䛺ගᏛ⣔䛷䛿ᙳ㡪䛜㢧ⴭ䛻䛺䜛䛣䛸䛜┤ឤⓗ䛻䜟䛛䜛䠊௒ᅇ䛾䝉䝑䝖䜰䝑䝥䛷౛䛘䜛䛸䠈N = 2.4 䛷䛒䜛䛯䜑䠈L’ ≈ 4 m䠈a’ ≈ 41 m 䛸䛺䜛䠊ᚑ䛳䛶 a’/a 䛿 0.87 䛸䛺䜚䠈1 ๭ᙉ䛾ኚ໬䛷䛿䛒䜛䜒䛾䛾㞟ගᚄ䛿 2 ಸ௨ୖ䛸䛺䛳䛯䠊䛣䛾஦䛛䜙䠈a’/a 䛿 1 ± 0.05 ⛬ᗘ䛻ᢚ䛘䜛ᚲせ䛜䛒䜛䛸⪃䛘䜙䜜䜛䠊
䛣䛣䛷䠈SACLA 䛻ᖖタ䛥䜜䛶䛔䜛 1 µm 㞟ගගᏛ⣔䛻㛵䛧䛶᳨ウ䛩䜛䠊L = 100 m䠈LMS = 20 m
䛸௬ᐃ䛩䜛䛸䠈0.943 < N < 1.064 䛷䛒䜛ᚲせ䛜䛒䜛䠊Lower 䝡䞊䝮䛾Ⓨᩓゅ䜢 2 µrad FWHM 䛸௬ᐃ䛩䜛䛸䠈཯ᑕග䛾Ⓨᩓゅ䛿 1.89 µrad FWHM 䛛䜙 2.13 µrad FWHM 䛷䛒䜛ᚲせ䛜䛒䜚䠈Ⓨᩓゅ䛾ኚFig. 5.8.

Influence of divergence change on focal profiles. Beam waist (a), and line

profiles in the vertical direction (b) and the optical axis (c) calculated with a photon energyof 10 keV, N = 2, and the 1 µm focusing system.

94➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂Fig. 5.9.

Normalized FWHM and dfy/zR as a function of N.

໬䛿 0.1 µrad ⛬ᗘ䛧䛛チᐜ䛥䜜䛺䛔䠊ᐇ㝿䛻䛿↔Ⅼ῝ᗘ➼䜒㛵䜟䛳䛶䛟䜛䛣䛸䛷䠈1 µm 㞟ග䛻ᑐ䛧䛶ไ⣙䛿䜖䜛䛟䛺䜛ྍ⬟ᛶ䛜䛒䜛䠊䛧䛛䛧䠈ᑗ᮶ⓗ䛻䛿 50 nm 㞟ගගᏛ⣔䜔䠈⌧ᅾ㛤Ⓨ୰䛾 sub 10
nm 㞟ගගᏛ⣔䛾฼⏝䜒ど㔝䛻ධ䜜䛶䛚䜚䠈䜘䜚ᖹᆠᛶ䛾㧗䛔᱁Ꮚ㠃䛜せồ䛥䜜䜛䛸⪃䛘䜙䜜䜛䠊ἼືගᏛィ⟬䜢⏝䛔䛶䠈䜘䜚ヲ⣽䛻᳨ウ䛧䛯䠊Ⓨᩓゅ䛾ኚ໬䛿 BM ⤖ᬗ䛾䜏䛻䜘䛳䛶⏕䛨䜛䛸௬ᐃ䛧䠈ඖ䚻䛾ග※䛜 BM ఩⨨䛻䛚䛔䛶స䜚ฟ䛩䝡䞊䝮䝃䜲䝈䛸Ⓨᩓゅ N ಸ䛸䛺䜛᪂ග※䛜స䜚ฟ䛩䝡䞊䝮䝃䜲䝈䛸䛜୍⮴䛩䜛䜘䛖䛻᪂ග※䜢㓄⨨䛧䛯䠊N = 2 䛻䛚䛡䜛ィ⟬⤖ᯝ౛䜢 Fig. 5.8 䛻♧䛩䠊䛣䛣䛷䛿䠈Ⅼග※䛾㞟ග㠃䛻䛚䛡䜛್༙඲ᖜ䠈㞟ග㠃䛾ග㍈᪉ྥ䛾ኚ఩㔞 dfy 䛻ὀ┠䛧䛶᳨ウ䜢⾜
䛳䛯䠊1 µm 㞟ගගᏛ⣔䛻ᑐ䛩䜛ィ⟬⤖ᯝ䜢 Fig. 5.9 䛻♧䛩䠊X ⥺䛾䜶䝛䝹䜼䞊䛿 10 keV䠈N = 1 䛻䛚䛡䜛ග※䝃䜲䝈 Φ = 30 µm FWHM 䛸䛧䛯䠊䛣䛣䛷䠈ྛ N 䛻䛚䛡䜛㞟ග䝃䜲䝈䜢 N = 1 䛻䛚䛡䜛㞟ග䝃䜲䝈䛷つ᱁໬䛧䠈㞟ග఩⨨䛾ኚ఩㔞 dfy 䜢௨ୗ䛷♧䛥䜜䜛䝺䜲䝸䞊㛗 zR 䛷つ᱁໬䛧䛯䠊

zR =

π di2
2ln 2λ(5.4)ᮏィ⟬ୖ䛷䛿 zR = 4.81 mm 䛷䛒䛳䛯䠊チᐜኚ఩㔞䜢䝺䜲䝸䞊㛗䛸ᐃ⩏䛩䜛䛸䠈チ䛥䜜䜛 N 䛿~ 1 ± 0.18
䛸䛺䜛䠊䛣䜜䛿 0.33 µrad 䛾Ⓨᩓゅኚ໬䛻┦ᙜ䛧䠈ᴟ䜑䛶ཝ䛧䛔せồ䛸䛺䜛䠊

5.3 SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯ᮏ⠇䛷䛿䠈SACLA BL3 䛻䛚䛔䛶⾜䛳䛯ᛶ⬟ホ౯ᐇ㦂䛻㛵䛧䛶ሗ࿌䛩䜛䠊X ⥺䛾䜶䝛䝹䜼䞊䛿

5.3㻌 SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯

Fig. 5.10.

95

Experimental setup for performance test at BL3 of SACLA.

10 keV 䛸䛧䠈Fig. 5.10 䛻♧䛩䝉䝑䝖䜰䝑䝥䜢⏝䛔䛯䠊X ⥺䝡䞊䝮䛾ศ๭䞉㐜ᘏගᏛ⣔䛾≉ᚩ䛾୍䛴䛷䛒䜛䠈ศ๭䝡䞊䝮䛾ගᏊデ᩿䛾ᐇ⌧ྍ⬟ᛶ䠈⢭ᗘ䛻㛵䛧䛶㆟ㄽ䛩䜛䠊ලయⓗ䛻䛿䠈ศ๭䝡䞊䝮䛭䜜䛮䜜䛻ᑐ䛩䜛䝅䝵䝑䝖ẖ䛾ᙉᗘデ᩿䛸䠈X ⥺䝇䝖䝸䞊䜽䜹䝯䝷䜢⏝䛔䛯㐜ᘏ᫬㛫䛾ᐃ䜢⾜䛳䛯䠊ḟ䛻䠈๓⠇䛻䛚䛔䛶ᠱᛕ஦㡯䛸䛧䛶ୖ䛜䛳䛯䠈Ⓨᩓゅኚ໬䛻䜘䜛㞟ග䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪䜢ㄪᰝ䛧䛯䠊5.3.1 䝅䝵䝑䝖ẖ䛾ᙉᗘデ᩿㻌
➨ 2.5 ⠇䛻䛚䛔䛶䜒ゐ䜜䛯䛜䠈SASE 䛾ཎ⌮䜢⏝䛔䛯 XFEL 䛿䠈㟁Ꮚ䝞䞁䝏䛾⤫ィㄽⓗ䛺䜶䝛䝹䜼䞊ศᕸ䛾ᙳ㡪䛷䝅䝵䝑䝖ẖ䛾ගᏊ䝟䝷䝯䞊䝍䛜኱䛝䛟␗䛺䜛䠊≉䛻䝇䝨䜽䝖䝹ศᕸ䛿䠈Si(220) ᅇᢡ䛾䝞䞁䝗ᖜ䛸ྠ➼䛺ᖜ䜢᭷䛩䜛ಶ䚻䛾䝇䝨䜽䝖䝹䝇䝟䜲䜽䛜஘㞧䛻ศᕸ䛧䛯ᵓ㐀䛸䛺䛳䛶䛚䜚䠈䝞䞁䝗ᖜ䜢ไ㝈䛩䜛䜘䛖䛺⣲Ꮚ䜢⏝䛔䛯㝿䛻኱䛝䛺ᙉᗘ䛾䜀䜙䛴䛝䛜⏕䛨䜛䠊᭦䛻䠈䝇䝹䞊䝥䝑䝖䛾ྥୖ䜢┠ⓗ䛸䛧䛯 2 Ⰽศ๭䜢⏝䛔䜛䛣䛸䛷䠈␗䛺䜛䝇䝨䜽䝖䝹䝇䝟䜲䜽䜢ษ䜚ฟ䛩䛣䛸䛸䛺䜚䠈ศ๭䝡䞊䝮䛾ᙉᗘ䛻┦㛵䛿ぢ䜙䜜䛺䛔䠄Fig. 5.11a䠅䠊ᚑ䛳䛶䠈䛔䛛䛺䜛ᐇ㦂䛻ᑐ䛧䛶䜒䠈ศ๭䝡䞊䝮䛭䜜䛮䜜䛾⊂❧ᐃ䛿ᚲせ୙ྍḞ䛸䛺䜛䠊
SACLA 䛻䛚䛔䛶䝅䝵䝑䝖ẖ䛾䝟䝹䝇䜶䝛䝹䜼䞊䜢

ᐃ䛩䜛Ⅽ䛻䠈䜹䝥䝖䞁䜔䝘䝜⤖ᬗ䝎䜲䝲䝰䞁䝗➼䛾ⷧ⭷䛜⏝䛔䜙䜜䛶䛔䜛䠄BIMOH䠈BIMEH4䠅 [75]䠊X ⥺䝟䝹䝇䛜ⷧ⭷䜢㏻㐣䛩䜛㝿䛻⏕䛨䜛ᩓ஘X ⥺䜢ୖୗᕥྑ䛻㓄⨨䛧䛯䝎䜲䜸䞊䝗䛻䜘䛳䛶᳨ฟ䛩䜛䠊䜹䝻䝸䝯䞊䝍 [76] ➼䛾⤯ᑐᙉᗘ⬟䛺⣲Ꮚ䜢⏝䛔䛯䜻䝱䝸䝤䝺䞊䝅䝵䞁䛜⾜䜟䜜䛶䛚䜚䠈䝅䝵䝑䝖ẖ䛾⤯ᑐᙉᗘ䜢ᐃ䛾ྍᐃྍ⬟䛷䛒䜛䠊㛤Ⓨ䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛿䠈Fig. 2.4a 䛻♧䛩䜘䛖䛻䠈ྛගᏛ⣲Ꮚ䛾ୗὶ䛻ᙉᗘ䝰䝙䝍䜢㓄⨨ྍ⬟䛷䛒➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂96䜚䠈䜹䝥䝖䞁䝣䜱䝹䝮䜢฼⏝䛧䛯ྠᵝ䛾ᙉᗘ䝰䝙䝍䜢⏝䛔䛯䠊䛣䛾 BIM 䛿 SACLA 䛾 DAQ䠄data
acquisition䠅䝅䝇䝔䝮䛻᥋⥆䛥䜜䛶䛚䜚䠈┦ᑐ್䛷䛿䛒䜛䜒䛾䛾䠈඲ XFEL 䝅䝵䝑䝖䛾䝕䞊䝍䛜䝅䝇䝔䝮ୖ䛻⵳✚䛥䜜䜛䠊
BR1 䛸 BR2 䛸䛾㛫䛻タ⨨䛧䛯 BIM2 䛸䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ㛫䛻㓄⨨䛧䛯 BIM4䠈䛭䛧䛶 1 µm 㞟ග䝭䝷䞊ගᏛ⣔䛾ୖὶ䛻タ⨨䛥䜜䛶䛔䜛 BIMEH4 䛸䛾┦㛵䜢☜ㄆ䛩䜛䛣䛸䛷䠈ྛศ๭䝡䞊䝮䛻ᑐ䛧䛶䛾䝅䝵䝑䝖ẖ䛾ᙉᗘデ᩿䛜ྍ⬟䛛䛹䛖䛛ㄪᰝ䛧䛯䠊ᐃ᮲௳䜢 Table 5.1 䛻䠈⤖ᯝ䜢 Fig. 5.11 䛻♧䛩䠊

䛺䛚䠈BIM2 䛸 BIMEH4䠈BIM4 䛸 BIMEH4 䛸䛾┦㛵䜢ㄪᰝ䛩䜛㝿䛿䠈䛭䜜䛮䜜 lower 䝡䞊䝮䠈upper 䝡䞊䝮䜢㖄ᯈ䛻䜘䛳䛶Ṇ䜑䛯䠊BIM2䠈BIM4 䛸 BIMEH4 䛸䛾㛫䛻䛿䛔䛪䜜䜒┦㛵䛜☜ㄆ䛥䜜䜛䛜䠈≉䛻
BIM4 䛸 BIMEH4 䛸䛾㛫䛻ᙉ䛔┦㛵䛜ぢ䜙䜜䜛䠊䛣䜜䛿 CC1 䛸 CC2 䛸䛾 ω 䛻ㄗᕪ䛜䜋䛸䜣䛹↓䛟䠈lower 䝡䞊䝮䛾᪉ྥ䜔䝥䝻䝣䜯䜲䝹䜒Ᏻᐃ䛧䛶䛔䜛஦䜢♧䛧䛶䛔䜛䠊䝣䜱䝑䝔䜱䞁䜾┤⥺䛛䜙䛾ㄗᕪศᕸ䜢ゎᯒ䛧䛯⤖ᯝ䠈BIM4 䜢⏝䛔䛶 lower 䝡䞊䝮䛾ᙉᗘ䜢ㄗᕪ±6.7%䛾⢭ᗘ䛷Ỵᐃ䛷䛝䜛䛣䛸䛜☜ㄆ
䛥䜜䛯䠊BIMEH4 䛻䜘䛳䛶 2 䛴䛾ศ๭䝡䞊䝮䛾ᙉᗘ࿴䛜ᐃ䛥䜜䜛䛯䜑䠈䛣䜜䜙 2 䛴䛾 BIM 䛻䜘䛳䛶

upper 䝡䞊䝮ᙉᗘ䜒ぢ✚䜒䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊

Fig. 5.11.

Correlations between several BIMs. (a) BIM2 and BIM4, (b) BIM2 andBIMEH4, and (c) BIM4and BIMEH4䠊

Table 5.1.

Experimental conditions during investigation of intensity correlations.

E − E0 (eV)CrystalIncidence
Pink

BS

BM

upper

lower

SM06

SM07

+1

−1

5.3㻌 SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯

5.3.2 ⤯ᑐ㐜ᘏ᫬㛫䛸⥺ᙧᛶ
᫬㛫ศゎ

97

ᐃ㻌

ᐃ䛻䛚䛔䛶䠈2 䛴䛾ศ๭䝟䝹䝇㛫䛾฿㐩᫬㛫ᕪ䛿᭱䜒㔜せ䛺䝟䝷䝯䞊䝍䛾 1 䛴䛷䛒䜛䠊ศ๭䞉㐜ᘏගᏛ⣔䛿ຍ㏿ჾ䛾䝆䝑䝍䞊䛾ᙳ㡪䜢ཷ䛡䛪䠈ᶵᲔⓗ䛻ග㊰㛗䜢ㄪᩚ䛩䜛䛣䛸䛷䜰䝖⛊䜸䞊䝎䞊䛻䛚䛡䜛᫬㛫⢭ᗘ䜢ྍ⬟䛸䛩䜛䠊䛧䛛䛧䠈䜰䝷䜲䝯䞁䝖ㄗᕪ➼䠈ᵝ䚻䛺せᅉ䛷㐜ᘏ᫬㛫䛻ㄗᕪ䛜⏕䛨䜛䠊ᮏගᏛ⣔䛻䛚䛔䛶䛿䠈➨ 4.4.2 㡯䛷㏙䜉䛯䜘䛖䛻䠈BR ⤖ᬗ䛾⛣ື㍈䛾ゅᗘ䛷䛒䜛 2θ1䠈
2θ2 䛾ㄗᕪ䛻䜘䜚䠈䝢䝁⛊䜸䞊䝎䞊䛾⤯ᑐ㐜ᘏ᫬㛫ㄗᕪ䛜⏕䛨䜛ྍ⬟ᛶ䛜䛒䜛䠊䜎䛯䠈䜰䝖⛊䜔䝣䜵䝮䝖⛊䛾᫬㛫⢭ᗘ䜢㐩ᡂ䛩䜛Ⅽ䛻䛿䠈䜰䝷䜲䝯䞁䝖䛾ᙳ㡪䛻䜘䛳䛶⏕䛨䜛䜟䛪䛛䛺⥺ᙧᛶ䛾ㄗᕪ䜢䜒ホ౯䛩䜛ᚲせ䛜䛒䜛䠊ᮏ㡯䛷䛿䠈X ⥺䝇䝖䝸䞊䜽䜹䝯䝷䠄HAMAMATSU1䠈C4575-03䠅䜢⏝䛔䜛䛣䛸䛷䠈⤯ᑐ㐜ᘏ᫬㛫䠈BR ⤖ᬗ䛾⛣ື㔞䛻ᑐ䛩䜛⥺ᙧᛶ䜢ㄪᰝ䛧䠈⢭ᗘ䜢ぢ✚䜒䜛䠊X ⥺䝇䝖䝸䞊䜽䜹䝯䝷䜢㞟ග䝭䝷䞊ୗὶ䛻㓄⨨䛧䠈㞟ග㠃䛻䛚䛔䛶✵㛫㔜」䜢㐩ᡂ䛧䛯ୖ䛷䠈ศ๭䝡䞊䝮㛫䛾㐜ᘏ᫬㛫䜢ᐃ䛧䛯䠊䝍䞊䝀䝑䝖䛿−5 ps 䛸䛧䛯䠊ᐃ᮲௳䛿ᙉᗘ┦㛵ᐃ䛸ྠᵝ䛷䛒䜚䠈ึᮇ≧ែ䛷䛾㐜ᘏ᫬㛫ᐃ⤖ᯝ䜢 Fig. 5.12 䛻♧䛩䠊ึᮇ఩⨨䛻䛚䛡䜛㐜ᘏ᫬㛫䛿⣙−10 ps 䛷䛒䜚䠈┠ⓗ᫬㛫䛛䜙 5 ps 䛾⤯ᑐ㐜ᘏ᫬㛫ㄗᕪ䛜⏕䛨䛶䛔䛯䠊䛧䛛䛧䠈BR ⤖ᬗ䛾⛣ື㔞䛻ᑐ䛩䜛㐜ᘏ᫬㛫ኚ໬䛾⥺ᙧᛶ䛿㠀ᖖ䛻㧗䛟䠈䝣䜱䝑䝔䜱䞁䜾┤⥺䛛䜙䛾ㄗᕪ䛿⣙±0.1 ps 䛷䛒䛳䛯䠊䛣䛾ㄗᕪ䛿䝇䝖䝸䞊䜽䜹䝯䝷䛾䜲䞁䝟䝹䝇ᛂ⟅䛷䛒䜛ᐇຠ᫬㛫ศゎ⬟ 2–3 ps FWHM 䜔䝢䜽䝉䝹ศゎ⬟ 0.5 ps䜘䜚䜒༑ศᑠ䛥䛔್䛷䛒䜚䠈䝇䝖䝸䞊䜽䜹䝯䝷䛾䝅䝇䝔䝮䜶䝷䞊䛻㉳ᅉ䛩䜛䛸⪃䛘䜙䜜䜛䠊䝣䜱䝑䝔䜱䞁䜾┤⥺䛾ഴ䛝䛿 1.41 ps/mm 䛷䛒䜚䠈⌮ㄽ್䛷䛒䜛 1.39 ps/mm 䛸䜘䛟୍⮴䛧䛯䠊ᚑ䛳䛶䠈┦ᑐ㐜ᘏ᫬㛫

Fig. 5.12.

Results of delay-time measurements with an X-ray streak camera. (a) Example

of streak image. (b) Line profiles in the temporal axis at several delay times. (c) 10-shotaveraged delay time as a function of ∆D (red). Blue shows errors from the fitted linear
function.

➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂98䛿䝇䝖䝸䞊䜽䜹䝯䝷䛻䜘䜛ᐃ↓䛧䛷䜒䠈ㄗᕪ±1.4%䛾⢭ᗘ䛜㐩ᡂ䛥䜜䜛䠊䛧䛛䛧䠈๓㏙䛾㏻䜚ᩘ ps 䛾⤯ᑐ್ㄗᕪ䜢᭷䛧䛶䛔䜛ྍ⬟ᛶ䛜䛒䜛䛯䜑䠈䝃䝤䝢䝁⛊䛾⤯ᑐ᫬㛫⢭ᗘ䛜ᚲせ䛺ሙྜ䛿䠈䝇䝖䝸䞊䜽䜹䝯䝷䛻䜘䜛

ᐃ䛜୙ྍḞ䛸䛺䜛䠊䜎䛯䠈䝇䝖䝸䞊䜽䜹䝯䝷䛻䜘䜛ᐃ䛷䛿ᩘ䝣䜵䝮䝖⛊䛾⤯ᑐ⢭ᗘ䛿ᮇᚅ䛷䛝䛺䛔䠊䛭䛾䜘䛖䛺㉸㧗᫬㛫⢭ᗘ䜢せồ䛩䜛ᐇ㦂䛻䛚䛔䛶䛿䠈ู䛾㧗⢭ᗘᐃᡭἲ䜢฼⏝䛩䜛ᚲせ䛜䛒䜛䠊ᡭἲ䛻㛵䛧䛶䛿⌧ᅾ᳨ウ୰䛷䛒䜛䠊

5.3.3 㞟ග≉ᛶホ౯㻌ศ๭䝡䞊䝮䛾㞟ග≉ᛶ䜢ホ౯䛧䛯䠊ᐃ᮲௳䜢 Table 5.2 䛻♧䛩䠊䛣䛣䛷䛿ⷧ䛔⤖ᬗ䜈䛾୙ᚲせ䛺↷ᑕ䝣䝷䝑䜽䝇䜢ᢚไ䛩䜛Ⅽ䠈Si(111) DCM 䛻䜘䜚༢Ⰽ໬䛧䛯 XFEL 䜢⏝䛔䛯䠊䜎䛯䠈⤖ᬗ㞺ᅖẼ䛾 He 䝟䞊䝆䜒ᐇ᪋䛧䛯䠊䜎䛪䠈BM 䛾 0.4 m ୗὶ䛻㓄⨨䛧䛯 CCD1 䛸 16 m ୗὶ䛾 CCD3 䛻䜘䜚ྛศ๭䝡䞊䝮䛾䝥䝻䝣䜯䜲䝹䜢ྲྀᚓ䛧䛯䛜䠈upper 䝡䞊䝮䛸 lower 䝡䞊䝮䛸䛾㛫䛻᫂░䛺㐪䛔䛿☜ㄆ䛷䛝䛺䛛䛳䛯䠄Fig. 5.13䠅䠊䛣䛣䛷䠈upper 䝡䞊䝮䝥䝻䝣䜯䜲䝹ୖ䛻☜ㄆ䛥䜜䜛ᵓ㐀䛿 BS ⤖ᬗ䛸䛧䛶⏝䛔䛯 SM07 䛾⿬㠃䛻ṧᏑ䛧䛯Ḟ㝗➼䛾ṍ䜏䛻⏤᮶䛧䛶䛔䜛䠊䛣䜜䛿 SM07䠄SM06䠅䛾⿬㠃ຍᕤ䝥䝻䝉䝇䛻䛚䛔䛶䠈㝖ཤ㔞 1–2 µm 䛸୙㊊䛧䛶䛔䛯Ⅽ䛷䛒䜚䠈SM08 䛻ᑐ䛧䛶䛿 7–8 µm 㝖ཤ䛩䜛䛣䛸䛷ᨵၿ䛧䛯䠊
➨ 5.2.5 㡯䛷䛾ぢ✚䜒䜚䛾㏻䜚䠈SACLA 䛻䛚䛔䛶䛿 0.5 µrad ௨ୗ䛾Ⓨᩓゅ䛾ኚ໬䛷䜒ၥ㢟䛸䛺䜛䛸⪃䛘䜙䜜䜛䠊䛭䛾䜘䛖䛺䜟䛪䛛䛺Ⓨᩓゅ䛾ኚ໬䜢䝡䞊䝮䝥䝻䝣䜯䜲䝹䛛䜙☜ㄆ䛩䜛䛣䛸䛿㞴䛧䛔䠊䛧䛛䛧䠈Fig. 5.14 䛻♧䛩䜘䛖䛻䠈㞟ග䝥䝻䝣䜯䜲䝹䛻䛿኱䛝䛺ᙳ㡪䛜☜ㄆ䛥䜜䛯䠊㞟ගᚄ~ 1 µm
FWHM 䛾⌮᝿ⓗ䛺㞟ග䛜㐩ᡂ䛥䜜䛶䛔䜛 lower 䝡䞊䝮䛻ᑐ䛧䠈upper 䝡䞊䝮䛾㞟ගᚄ䛿Ỉᖹ䠈㖄┤୧᪉ྥඹ䛻 3–4 µm FWHM 䛸䛺䛳䛯䠊ᅇᢡ≉ᛶ䛾㐪䛔䛛䜙䠈䛣䛾㞟ග䝥䝻䝣䜯䜲䝹䛾஘䜜䛿୺䛻 SM07 䛻⏤᮶䛩䜛䜒䛾䛰䛸⪃䛘䜙䜜䜛䠊䛭䛣䛷䠈ኚ๎ⓗ䛷䛿䛒䜛䜒䛾䛾䠈BS䠄SM07䠅䛾ཌ䛔ಖᣢ㡿ᇦ䛻 X ⥺䜢↷ᑕ䛧䠈Ⓨᩓゅኚ໬䛾せᅉ䜢ရ㉁䛾㧗䛔 BM 䛰䛡䛻ไ㝈䛧䛯䠊㠀㞟ග䛾䝡䞊䝮䝥䝻䝣䜯䜲䝹䠈㞟ග䝥䝻䝣䜯䜲䝹䜢 Fig. 5.15 䛻♧䛩䠊㠀㞟ග䝥䝻䝣䜯䜲䝹ୖ䛻䛿䜋䛸䜣䛹ᙳ㡪䛿☜ㄆ䛷䛝䛺䛔䜒䛾䛾䠈㖄┤᪉ྥ䛾㞟ගᚄ䛜 1.95 µm
FWHM 䛸䛺䜚䠈㞟ග≉ᛶ䛻ᑐ䛩䜛᫂䜙䛛䛺ᨵၿ䛜ぢ䜙䜜䛯䠊䛺䛚䠈SM07 䛾ᴟⷧศ๭㡿ᇦ䠈䜒䛖୍᪉䛾⤖ᬗ䛾ཌ䛔ಖᣢ㡿ᇦ䛻 X ⥺䜢↷ᑕ䛧䛯㝿䛿䠈㖄┤᪉ྥ䛾㞟ගᚄ⣙ 5 µm FWHM 䛜ᚓ䜙䜜䛶䛔䜛䠊䛣䛾⤖ᯝ䛛䜙䠈PCVM ຍᕤ䝥䝻䝉䝇䛾⢭ᗘ䜢ྥୖ䛥䛫䠈䜘䜚ᖹᆠ䛺ᴟⷧศ๭㡿ᇦ䜢๰ᡂ䛩䜛䛣䛸䛷䠈㏆䛔ᑗ᮶䠈䛔䛪䜜䛾ศ๭䝡䞊䝮䛻ᑐ䛧䛶䜒⌮᝿ⓗ䛺㞟ග䛜ᐇ⌧䛥䜜䜛䛸⪃䛘䜙䜜䜛䠊

5.3㻌 SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯
Table 5.2.

99

Experimental conditions during focusing characterization.

E − E0 (eV)CrystalIncidence
Si(111) DCM

Fig. 5.13.

BS

BM

upper

lower

SM07

SM08

+0.35

−0.35

Averaged profiles of the split beams. (a) The lower beam and (b) the upper

beam measured at CCD1. (c) The lower beam and (d) the upper beam at CCD3.

➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂100

Fig. 5.14.

Focal profiles of the split beams. (a) Horizontal and (b) vertical profiles. Red

and blue represent the upper and the lower beams, respectively.

Fig. 5.15.

Averaged upper beam profiles with illuminating a thick part of BS. (a) At

CCD1 and (b) CCD3. (c) Horizontal and (d) vertical focal profiles.

5.4㻌 ⤖ゝ101

5.4 ⤖ゝ㻌ᮏ❶䛷䛿䠈㛤Ⓨ䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂䛻㛵䛧䛶㏙䜉䛯䠊SPring-8 䛻䛚䛔䛶䠈⪃᱌䛧䛯䜰䝷䜲䝯䞁䝖ᡭἲ䛾᭷ຠᛶ䜢♧䛧䠈䜎䛯䠈཯᚟ἲ䜢㐺⏝䛩䜛䛣䛸䛷䠈30 nm 䛾⢭ᗘ䛷ศ๭䝡䞊䝮䛾✵㛫㔜」䛻ᡂຌ䛧䛯䠊㐜ᘏ᫬㛫ㄪᩚ䛾Ⅽ䛾䠈BR ⤖ᬗ䛾┤㐍⛣ື䛾ᙳ㡪䜢ㄪᰝ䛧䛯䠊䜎䛯䠈ᴟⷧ⤖ᬗ䛾᱁Ꮚ㠃䛾‴᭤䛻䜘䛳䛶䝡䞊䝮䛾Ⓨᩓゅ䛜ኚ໬䛧䠈㞟ග䝥䝻䝣䜯䜲䝹䛻ᑐ䛧䛶ᝏᙳ㡪䜢ཬ䜌䛩஦䜢♧䛧䛯䠊SACLA 䛻䛚䛔䛶䜒ᛶ⬟ホ౯䜢⾜䛔䠈ྛ✀デ᩿ἲ䜔䠈⌮᝿㞟ග䛾ᐇ⌧ྍ⬟ᛶ䜢᳨ウ䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) 2θ2 䛾ㄪᩚ䛻䛚䛔䛶䠈ග⥺㏣㊧ィ⟬䛸Ⰻ䛟୍⮴䛩䜛䝡䞊䝮఩⨨ᣲື䜢☜ㄆ䛧䠈ග⥺㏣㊧ィ⟬䛾᭷ຠᛶ䜢ᐇド䛧䛯䠊(2) ග※䛛䜙 BM ⤖ᬗ䜎䛷䛾㊥㞳䛜▷䛔ගᏛ⣔䛻䛚䛔䛶᭷ຠ䛺䇾䝟䝷䝺䝹䝅䝣䝖䇿䛻䜘䛳䛶䠈䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䜢ᢚไ䛧䛴䛴✵㛫㔜」䜢㐩ᡂ䛧䛯䠊䜎䛯䠈཯᚟ἲ䜢᥇⏝䛩䜛䛣䛸䛻䜘䛳䛶䠈0.3µrad ௨ୗ䛻䜎䛷ゅᗘ䝭䝇䝬䝑䝏䜢ᢚไ䛧䠈Ỉᖹ䠈㖄┤୧᪉ྥ䛻䛚䛔䛶 30 nm 䛾⢭ᗘ䛷✵㛫ⓗ䛻㔜」䛥䛫䜛䛣䛸䛻ᡂຌ䛧䛯䠊(3) 㐜ᘏ᫬㛫ㄪᩚ䛻䜘䛳䛶䠈≉䛻 ω 䛾ጼໃኚ໬䛜䜒䛯䜙䛥䜜䜛䛣䛸䜢᫂䜙䛛䛻䛧䛯䠊ㄪᩚ᫬㛫 1 ps ⛬ᗘ䛷䛒䜜䜀䠈Ỉᖹ᪉ྥ䜈䛾ᙳ㡪䛜ᑠ䛥䛔䛣䛸䜢♧䛧䛯䠊䛯䛰䛧䠈኱䛝䛺㐜ᘏ᫬㛫ㄪᩚ䛿 χ 䛾ጼໃኚ໬䜒⏕䛨䛥䛫䜛䛣䛸䜢☜ㄆ䛧䠈ᵓ㐀ⓗ䛻Ᏻᐃ䛺ไᚚ⣔䛾ᚲせᛶ䜢♧䛧䛯䠊(4) 䝖䞊䝍䝹䛷⣙ 28%䛾䝇䝹䞊䝥䝑䝖䜢☜ㄆ䛧䛯䠊Lower 䝟䝇䛻㛵䛧䛶䠈ィ⟬್䛛䜙䛾పୗ䛿ධᑕ䝡䞊䝮䛾ゅᗘᵓ㐀䛻౫Ꮡ䛧䛶䛚䜚䠈TEM00 䝰䞊䝗䛾ධᑕග䛻ᑐ䛧䛶䛿䜋䜌ィ⟬್㏻䜚䛾䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䜛஦䜢♧䛧䛯䠊䜎䛯䠈upper 䝟䝇䛻㛵䛧䛶䛿䠈䝡䞊䝮䝥䝻䝣䜯䜲䝹䛻Ⓨᩓゅ䛾ᣑ኱䛜☜ㄆ䛥䜜䠈᱁Ꮚ㠃䛜‴᭤䛧䛶䛔䜛஦䜢☜ㄆ䛧䛯䠊⌮᝿᱁Ꮚ㠃䛛䜙䛾஘䜜䛻䜘䛳䛶䝇䝹䞊䝥䝑䝖䛜పୗ䛧䛯䛸⪃䛘䜙䜜䜛䠊(5) ☜ㄆ䛥䜜䛯Ⓨᩓゅኚ໬䛾㞟ග䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪䜢᳨ウ䛧䛯䠊SACLA 䛻䛚䛔䛶䛿 0.3 µrad⛬ᗘ䛾Ⓨᩓゅ䛾ኚ໬䛻䜘䛳䛶䜒䠈㞟ගᚄ䛿ᩄឤ䛻ᙳ㡪䜢ཷ䛡䜛஦䜢♧䛧䛯䠊(6) SASE 䜢⏝䛔䛯 XFEL 䛻ᑐ䛧䛶ᚲせ୙ྍḞ䛺䠈䝅䝵䝑䝖ẖ䛾ᙉᗘデ᩿䛾ᐇ⌧ྍ⬟ᛶ䜢᳨ウ䛧䛯䠊➨ 5 ❶㻌 ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂

102

BIM4 䛸 BIMEH4 䛸䛾㛫䛻Ⰻ䛔┦㛵䜢☜ㄆ䛧䠈ㄗᕪ±6.7%䛾⢭ᗘ䛷ᙉᗘᐃ䛜ྍ⬟䛷䛒䜛஦䜢♧䛧䛯䠊(7) X ⥺䝇䝖䝸䞊䜽䜹䝯䝷䜢⏝䛔䛶䠈ศ๭䝡䞊䝮㛫䛾⤯ᑐ㐜ᘏ᫬㛫䜢ᐃ䛧䛯䠊䝍䞊䝀䝑䝖䛸䛧䛯㐜ᘏ᫬㛫䛛䜙⣙ 5 ps 䛾㐜ᘏ᫬㛫ㄗᕪ䜢☜ㄆ䛧䠈㐜ᘏ᫬㛫 ᐃ䛾ᚲせᛶ䜢♧䛧䛯䠊ග⥺㏣㊧䛻䜘䜛ぢ✚䜒䜚䛹䛚䜚䠈BR ⤖ᬗ䛾⛣ື㔞䛻ᑐ䛩䜛㐜ᘏ᫬㛫ኚ໬䛿ィ⟬್䛸Ⰻ䛟୍⮴䛧䛯䠊(8) SACLA 䛻䛚䛔䛶䜒 lower 䝡䞊䝮䛻ᑐ䛧䛶⌮᝿ⓗ䛺㞟ග䛜ᐇ⌧䛩䜛஦䜢ᐇド䛧䛯䠊Upper 䝡䞊䝮䛻ᑐ䛧䛶䜒䠈3–4 µm FWHM 䛾㞟ගᚄ䜢㐩ᡂ䛧䛯䠊ཌ䜏ᆒ୍ᛶ䛾㧗䛔 BM ⤖ᬗ䛾䜏ᴟⷧศ๭㡿ᇦ䛻䛚䛔䛶཯ᑕ䛥䛫䛯㝿䠈2 µm FWHM ௨ୗ䛾㞟ගᚄ䛜ᚓ䜙䜜䠈ᴟⷧ⤖ᬗస〇ᢏ⾡䜢᭦䛻ྥୖ䛥䛫䜛䛣䛸䛷䠈ᑗ᮶ⓗ䛻䛿⌮᝿ⓗ䛺㞟ග䛜⾜䛘䜛஦䜢♧䛧䛯䠊

➨6❶

⥲ᣓ
ᮏ◊✲䛷䛿䠈2 䛴䛾 X ⥺䝟䝹䝇䜢⏝䛔䛶㟁Ꮚ䞉ཎᏊ䛾㉸㧗㏿䝎䜲䝘䝭䜽䝇䜢ᐃ䛩䜛䛣䛸䜢┠ᶆ䛸䛧䠈ຍ㏿ჾ䝧䞊䝇䛾ᡭἲ䛷䛿฿㐩ᅔ㞴䛺䠈䝢䝁⛊䛛䜙䝘䝜⛊䛾᫬㛫ᕪ䜢᭷䛩䜛 2 䛴䛾 X ⥺䝟䝹䝇䜢⏕ᡂྍ⬟䛺ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ䜢┠ⓗ䛸䛧䛯䠊ගᏛ㓄⨨䛾タィ䛛䜙୺せ⣲Ꮚ䛾స〇䠈᭷ຠ䛺䜰䝷䜲䝯䞁䝖ᡭἲ䜎䛷䜒ྵ䜑䠈ໟᣓⓗ䛺䝅䝇䝔䝮㛤Ⓨ䜢⾜䛳䛯䠊䛭䛧䛶➨ 3 ୡ௦ᨺᑕග᪋タ䛷䛒䜛
SPring-8 䜔䠈X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊᪋タ䛷䛒䜛 SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯䛻䜎䛷䛴䛺䛢䛯䠊➨ 1 ❶䛷䛿䠈ᮏㄽᩥ䛾Ṕྐⓗ⫼ᬒ䛻ゐ䜜䠈䛣䜜䜎䛷ᥦ᱌䛥䜜䛯◳ X ⥺ศ๭䞉㐜ᘏගᏛ⣔䛻㛵䛧䛶䠈䛭䜜䛮䜜䛾≉ᚩ䜢ゎㄝ䛧䛯䠊䜎䛯䠈ᥦ᱌䛩䜛ගᏛ⣔䛻䛚䛔䛶ᚲせ୙ྍḞ䛺䠈ᴟⷧ䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䜔䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ୡ⏺ⓗ䛺㛤Ⓨືྥ䜢㏙䜉䛯䠊䛭䜜䜙䜢㋃䜎䛘䠈ᮏ◊✲䛻䛚䛔䛶㛤Ⓨ䜢┠ᣦ䛧䛯ගᏛ⣔䛾ᴫ␎䠈ඞ᭹䛩䜉䛝ㄢ㢟䜢♧䛧䛯䠊➨ 2 ❶䛷䛿䠈㧗䛔Ᏻᐃᛶ䠈ㄪᩚ⮬⏤ᗘ䜢ᚓ䜛䛯䜑䠈⤖ᬗ⣲Ꮚ䛻䜘䜛 Bragg ᅇᢡ䛻ᇶ䛵䛔䛯Ἴ㛗ྍኚ◳ X ⥺ศ๭䞉㐜ᘏගᏛ⣔䜢ᥦ᱌䛧䠈ྛ✀䝟䝷䝯䞊䝍䛾タィ䜢⾜䛳䛯䠊䜎䛯䠈ືຊᏛ⌮ㄽ䛻ᇶ䛵䛝䠈ᴟⷧ⤖ᬗ䛻ᑐ䛩䜛せồ䜢ぢ✚䜒䛳䛯䠊䛭䛧䛶ண᝿䛥䜜䜛䝇䝹䞊䝥䝑䝖䜔ศ๭䝟䝹䝇䛾᫬㛫䝥䝻䝣䜯䜲䝹➼䜢䠈DuMond ᅗ䜔䝣䞊䝸䜶ゎᯒ䜢⏝䛔䛶ィ⟬䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) ග㊰㛗ྍኚ䝟䝇䛸ᅛᐃ䝟䝇䛸䛜⊂❧䛧䛯ගᏛ㓄⨨䛾᥇⏝䛻䜘䜚䠈㐜ᘏ᫬㛫ኚ᭦䛾㝿䛾ㄪᩚ㍈䛾๐ῶ䜔䠈ຍ㏿ჾ䝧䞊䝇䛾 2 Ⰽ XFEL 䛸䛾ඹ⏝䜢ྍ⬟䛸䛧䛯䠊(2) ග㊰㛗ᅛᐃ䝟䝇䛻 2 䛴䛾䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢ᑟධ䛩䜛䛣䛸䛷䠈ㄪᩚ㍈䛾๐ῶ䠈䜰䝷䜲䝯䞁䝖ᇶ‽䛸䛺䜛䝡䞊䝮䛾౪⤥䜢ྍ⬟䛸䛧䛯䠊(3) Bragg ᅇᢡ䝞䞁䝗ᖜ䛻䛚䛡䜛䝣䞊䝸䜶㝈⏺᫬㛫ᖜ䛜 XFEL ᅛ᭷䛾䝟䝹䝇᫬㛫ᖜ䛻ᑐ䛧༑ศᑠ䛥103

➨ 6 ❶㻌 ⥲ᣓ

104

䛟䠈1 m ⛬ᗘ䛾䝇䝨䞊䝇䛻䛚䛔䛶䜒ᩘⓒ䝢䝁⛊䛾㐜ᘏ䜢⏕ᡂྍ⬟䛸䛩䜛Ⅽ䠈Si(220) ᅇᢡ䜢᥇⏝䛧䛯䠊(4) SACLA 䛾୺せ䛺 X ⥺䜶䝛䝹䜼䞊⠊ᅖ䜢䜹䝞䞊䛧䛴䛴䠈㐜ᘏ᫬㛫䝊䝻䛾⏕ᡂ䜔䠈⾲㠃ィ䛜ྍ⬟䛺䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢タィ䛧䛯䠊Si(220) ᅇᢡ฼⏝᫬䛻チᐜ䛥䜜䜛 X ⥺䜶䝛䝹䜼䞊ᖜ䛿
6.5–11.5 keV 䛸䛺䛳䛯䠊(5) ไᚚ⣔䜢ᵓ⠏䛧䠈㐜ᘏ᫬㛫⠊ᅖ䠈᫬㛫䝇䝔䝑䝥䜢ぢ✚䜒䛳䛯䠊10 keV 䛻䛚䛔䛶䛭䜜䛮䜜䠈−50
䛛䜙+47 ps 䛸⣙ 0.3 fs 䛸䛺䛳䛯䠊(6) 䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛻せồ䛥䜜䜛ཌ䜏䛸チᐜㄗᕪ䜢䠈X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ䛻ᇶ䛵䛝᳨ウ䛧䛯䠊㧗䛔䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䜛 2 Ⰽศ๭ᡭἲ䛾㐺⏝䛻䜘䜚䠈Si(220) ⤖ᬗ䛻䛚䛔䛶䠈3.2–12.4µm 䛾ཌ䜏䛜ồ䜑䜙䜜䠈チᐜㄗᕪ 820 nm 䛸ぢ✚䜒䜙䜜䛯䠊(7) DuMond ᅗ䛻ᇶ䛵䛝䠈ศ๭䞉㐜ᘏගᏛ⣔䛾䝇䝹䞊䝥䝑䝖䜢ィ⟬䛧䛯䠊Si(111) 䛾䝞䞁䝗ᖜ䜢᭷䛩䜛ධᑕග䛻ᑐ䛧䛶䠈10 keV 䛻䛚䛔䛶䝖䞊䝍䝹 50%䛸䛺䛳䛯䠊䜎䛯䠈Ⓨᩓゅ䛾ᙳ㡪䜒ㄪᰝ䛧䠈XFEL
䛾䜘䛖䛺ᖹ⾜ᛶ䛾㧗䛔ග※䛻ᑐ䛧䛶䛿䜋䛸䜣䛹↓ど䛷䛝䜛஦䜢♧䛧䛯䠊(8) 䝣䞊䝸䜶ゎᯒ䛻ᇶ䛵䛝䠈SASE ග※䛻ᑐ䛩䜛䝇䝹䞊䝥䝑䝖ศᕸ䜔䝟䝹䝇䛾᫬㛫ᣑ኱ᖜ䜢ィ⟬䛧䛯䠊ᖹᆒ䝇䝹䞊䝥䝑䝖䛿䝖䞊䝍䝹䛷 1.0–1.5%䛸ぢ✚䜒䜙䜜䠈䝟䝹䝇᫬㛫ᖜ䛜 3–4 fs ᣑ኱䛩䜛஦䜢ᑟ䛝ฟ䛧䛯䠊

➨ 3 ❶䛷䛿䠈ᴟⷧ⤖ᬗ䜔䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾స〇䛻⏝䛔䛯 PCVM ຍᕤἲ䛾ᇶ♏ᴫᛕ䜔ຍᕤ≉ᛶ䜢⤂௓䛧䛯䠊䛭䛧䛶㧗䛔ᵓ㐀Ᏻᐃᛶ䜢᭷䛩䜛䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䜢 2 䝍䜲䝥ᥦ᱌䛧䠈䛭䜜䛮䜜䛾ຍᕤ䝥䝻䝉䝇䛾ヲ⣽䜢⤂௓䛧䛯䠊ヨస䛧䛯 8 䛴䛾䝃䞁䝥䝹⤖ᬗ䛾ຍᕤ⤖ᯝ䛸䠈SPring-8 䛻䛚䛔䛶⾜䛳䛯⤖ᬗᛶホ౯⤖ᯝ䜢♧䛧䛯䠊䜎䛯䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾ෆቨ㠃 PCVM ຍᕤ䛻㛵䛧䛶䠈ᇶ♏ᴫᛕ䛸 X ⥺䛾ᅇᢡ≉ᛶᨵၿ䜈䛾᭷ຠᛶ䜢ᐇド䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) 㧗䛔ຍᕤ䛾✵㛫ศゎ⬟䜢ᚓ䜛䛯䜑䠈ඛ➃ᚄ 0.3 mm 䛾㟁ᴟ䜢〇స䛧䠈ຍᕤ᮲௳䛾᭱㐺໬䜢⾜䛳䛯䠊䛭䛧䛶್༙ᖜ 0.5 mm 䛾㟼Ṇຍᕤ⑞䛾ྲྀᚓ䛻ᡂຌ䛧䠈䝥䝷䝈䝬⁫ᅾ᫬㛫䛻ᑐ䛩䜛㝖ཤయ✚䛾㧗䛔⥺ᙧᛶ䜢☜ㄆ䛧䛯䠊ᮏㄽᩥ䛾䜎䛸䜑䛸௒ᚋ䛾ᒎᮃ

105(2) ᵝ䚻䛺⤖ᬗ㠃䛾䝅䝸䝁䞁䜴䜶䝝䛻ᑐ䛧䛶 PCVM ຍᕤ䜢⾜䛔䠈ຍᕤ㏿ᗘ䛿⤖ᬗ㠃䛻౫Ꮡ䛧䛺䛔஦䜢ᐇド䛧䛯䠊

(3) PCVM ຍᕤ䛻䛚䛔䛶䠈ඃඛⓗ䛻⤖ᬗṍ䜏䛜㝖ཤ䛥䜜䠈䛭䛾ᚋຍᕤ䛜㐍⾜䛩䜛䛻䛴䜜ᖹ⁥ᛶ䛜ྥୖ䛩䜛஦䜢♧䛧䛯䠊᭱⤊ⓗ䛻䛿⣙ 0.1 nm rms 䛾㉸ᖹ⁥㠃䛜ᚓ䜙䜜䜛஦䜢ᐇド䛧䛯䠊(4) ᶵᲔຍᕤ䛸⤌䜏ྜ䜟䛫䛯䠈❆ᆺᵓ㐀䜢᭷䛩䜛䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗస〇䝥䝻䝉䝇䜢ᥦ᱌䛧䠈ྛ䝥䝻䝉䝇䛾ᚲせᛶ䠈᭷ຠᛶ䜢♧䛧䛯䠊≉䛻䠈◊☻᫬䛻䜟䛪䛛䛻ᑟධ䛥䜜䜛⤖ᬗᏛⓗ䝎䝯䞊䝆䛜䠈ᴟⷧ㡿ᇦ䛻ᑐ䛧䛶⮴࿨ⓗ䛺ᙳ㡪䜢୚䛘䜛஦䜢Ⓨぢ䛧䠈ᴟⷧ᏶඲⤖ᬗస〇䛻ᑐ䛩䜛ᐇ⌧ྍ⬟ᛶ䜢♧䛧䛯䠊(5) ཌ䛔ຍᕤኚ㉁ᒙ䜢᭷䛩䜛䝔䞊䝟䞊㠃䛻ᑐ䛧䛶୍ᣓ PCVM ฎ⌮ྍ⬟䛺㟁ᴟ䜢〇స䛧䠈䝥䝻䝉䝇䛾᭷ຠᛶ䜢♧䛧䛯䠊䜎䛯䠈䝔䞊䝟䞊㠃✚䛾ᗈ䛔⤖ᬗ䛻ᑐ䛧䛶䛿䠈ඛ➃ᚄ䛾⣽䛔䝟䜲䝥㟁ᴟ䜢ྠᚰ෇㉮ᰝ䛩䜛䛣䛸䛷䠈ຍᕤ⏕ᡂ≀䛾෌௜╔䛾↓䛔ຍᕤኚ㉁ᒙ㝖ཤ䛻ᡂຌ䛧䛯䠊(6) ⿬㠃ຍᕤ᫬䛾⾲㠃ᙧ≧䛾㔜せᛶ䜢♧䛧䠈୍᪦ᖹᆠ໬䜢⾜䛖䛣䛸䛷䠈ᆒ୍䛺⿬㠃 PCVM ຍᕤ䛻ᡂຌ䛧䛯䠊(7) ㉮ᰝᆺⓑⰍᖸ΅ィ䛸ᗈᖏᇦ㉥እศගᖸ΅ィ䜢⤌䜏ྜ䜟䛫䛯䠈⦪䠈ᶓ୧᪉ྥ䛾ศゎ⬟䛾㧗䛔ཌ䜏ศᕸᐃἲ䜢㛤Ⓨ䛧䠈㧗⢭ᗘ䛺ཌ䜏ไᚚ䜢ᐇ⌧䛧䛯䠊(8) PCVM ຍᕤ䛻䜘䜚䠈㧗ḟᅇᢡ㠃䛻䛚䛔䛶⌮᝿ⓗ䛺ᅇᢡ≉ᛶ䜢᭷䛩䜛䠈ཌ䜏 10 µm ௨ୗ䛾⤖ᬗ䛾స〇䛻ୡ⏺䛷ึ䜑䛶ᡂຌ䛧䛯䠊(9) ⤖ᬗ Type II 䛾᥇⏝䛻䜘䛳䛶䠈ᗈ䛔⠊ᅖ䛷Ⰻዲ䛺ᅇᢡ≉ᛶ䜢♧䛩ⷧ䛔⤖ᬗ䛾స〇䛻ᡂຌ䛧䛯䠊(333) 䜔 (422) ➼䠈䛒䜙䜖䜛⤖ᬗ㠃䛻ᑐ䛩䜛㐺⏝ᛶ䛾㧗䛥䜢♧䛧䛯䠊(10) 䝻䝑䜻䞁䜾䜹䞊䝤୰ᚰゅศᕸ䛸⾲㠃㉳అ䛸䛾┦㛵䜢Ⓨぢ䛧䠈ẚ㍑ⓗཌ䛔⤖ᬗ䛻䛚䛔䛶䜒䠈㧗䛔ᖹᆠᛶ䛜せồ䛥䜜䜛஦䜢Ⓨぢ䛧䛯䠊➨ 6 ❶㻌 ⥲ᣓ106(11) X ⥺↷ᑕ䛻䜘䛳䛶௜╔䛩䜛䜟䛪䛛䛺୙⣧≀⭷䛜ᴟⷧ⤖ᬗ䛾ᅇᢡ≉ᛶ䛻ᙳ㡪䛩䜛஦䜢Ⓨぢ䛧䛯䠊䛭䛧䛶 He 䝟䞊䝆䛻䜘䛳䛶ᢚไ䛜ྍ⬟䛷䛒䜛஦䜢ᐇド䛧䛯䠊(12) ෇ᰕᆺ䛾ᅇ㌿㟁ᴟ䜢⏝䛔䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗෆቨ㠃䛾⾲㠃ṍ䜏㝖ཤ䜢ヨ䜏䛯䠊X ⥺䜢⏝䛔䛯ホ౯䛻䜘䛳䛶䠈ෆቨ㠃 PCVM ฎ⌮䛾᭷ຠᛶ䜢♧䛧䛯䠊➨ 4 ❶䛷䛿䠈ศ๭䝡䞊䝮䛾✵㛫ⓗ㔜」䜢┠ᣦ䛧䠈䜰䝷䜲䝯䞁䝖ᡭἲ䜢᳨ウ䛧䛯䠊ᗄఱᏛⓗ䛺どⅬ䛛䜙 X ⥺䛾㞟ග䜢᳨ウ䛧䠈䜰䝷䜲䝯䞁䝖ㄗᕪ䛻䜘䛳䛶⏕䛨䜛 upper 䝡䞊䝮䛾఩⨨䠈ゅᗘㄗᕪ䛸䠈㞟ග఩⨨䛾ኚ఩㔞䛸䛾┦㛵䜢⤖䜃䛴䛡䛯䠊䛭䛧䛶ᗄఱᏛ䠈ග⥺㏣㊧ィ⟬䜢⏝䛔䛶䠈ྛᅇ㌿䝇䝔䞊䝆䛻ồ䜑
䜙䜜䜛ゅᗘศゎ⬟䜢ᑟฟ䛧䛯䠊ἼືගᏛィ⟬䛻䜘䛳䛶䠈ᗄఱᏛⓗ䛺ぢ✚䜒䜚䛾ṇ䛧䛥䜢ᐇド䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) ග※䛾⤖ീ䛻ᇶ䛵䛟 X ⥺㞟ගගᏛ⣔䛻䛚䛔䛶䠈ග※䛾ኚ఩䛸㞟ගⅬ䛾ኚ఩䛜ᗄఱಸ⋡䛻䜘䛳䛶᥋⥆䛥䜜䛶䛔䜛஦䜢♧䛧䠈䜰䝷䜲䝯䞁䝖ㄗᕪ䛸⤖䜃䛴䛡䛯䠊(2) SACLA 䛻ᖖタ䛥䜜䛶䛔䜛㞟ගගᏛ⣔䛻㛵䛧䛶᳨ウ䜢⾜䛔䠈upper 䝡䞊䝮䛾఩⨨䜢 15 µm䠈ゅᗘ䜢 0.15 µrad ௨ୗ䛾⢭ᗘ䛷ㄪᩚ䛩䜛ᚲせ䛜䛒䜛஦䜢ᑟ䛝ฟ䛧䛯䠊䜎䛯䠈䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䜢
㜵䛠Ⅽ䠈఩⨨䠈ゅᗘㄗᕪ䛾⤯ᑐ್䜢䛭䜜䛮䜜 125 µm䠈1.25 µrad ௨ୗ䛻ㄪᩚ䛩䜛ᚲせ䛜䛒䜛஦䜢♧䛧䛯䠊(3) 䛒䜙䜖䜛ゅᗘㄗᕪ䛾ᙳ㡪䜢᳨ウ䛧䠈ᚲせ᭱ప㝈䛾ㄪᩚ㍈ᩘ䛻䜘䜛䜰䝷䜲䝯䞁䝖ᡭἲ䜢㛤Ⓨ䛧䛯䠊ලయⓗ䛻䛿䠈BM ⤖ᬗ⾲㠃䛻䛚䛡䜛ศ๭䝡䞊䝮㛫䛾఩⨨䛪䜜䜢⿵ṇ䛩䜛Ⅽ䛻 BS 䛾 χ䠈2θ2 䜢ㄪᩚ䛧䠈ゅᗘ䝭䝇䝬䝑䝏䛾ᢚไ䛾䛯䜑䛻䠈BM ⤖ᬗ䛾䜏䜢ㄪᩚ䛧䛯䠊(4) ᗄఱᏛ䛻ᇶ䛵䛝䠈ྛゅᗘㄗᕪ䛾ᙳ㡪䜢ᩘᘧ໬䛧䠈せồศゎ⬟䜢ᑟฟ䛧䛯䠊᭱䜒ཝ䛧䛔ㄪᩚ㍈䛿ωBM 䛷䛒䜚䠈0.075 µrad 䛾ศゎ⬟䛜せồ䛥䜜䛯䠊(5) 䛒䜙䜖䜛ゅᗘㄗᕪ䛾ᙳ㡪䜢༶ᗙ䛻ホ౯ྍ⬟䛺ග⥺㏣㊧ィ⟬䛾ᗙᶆ⣔䜢⪃᱌䛧䠈ᗄఱᏛ䛻䜘䜛ぢ✚䜒䜚䛸Ⰻ䛟୍⮴䛩䜛せồศゎ⬟䜢ᑟฟ䛧䛯䠊䜎䛯䠈BR ⤖ᬗ䛾⛣ື㍈ゅᗘ䛷䛒䜛 2θ1䠈2θ2 䛜X ⥺䛾ᩓ஘ゅ 2θB 䛸␗䛺䜛ሙྜ䠈㐜ᘏ᫬㛫䛾⤯ᑐ᫬㛫⢭ᗘ䛻኱䛝䛺ᙳ㡪䜢୚䛘䜛஦䜢♧䛧䛯䠊ᮏㄽᩥ䛾䜎䛸䜑䛸௒ᚋ䛾ᒎᮃ107(6) ἼືගᏛィ⟬䜢⾜䛔䠈ග䛾Ἴືᛶ䛾ཬ䜌䛩ᙳ㡪䜢ㄪᰝ䛧䛯䠊䜺䜴䝇䝡䞊䝮䛾㞟ගⅬ䝅䝣䝖䛾ᙳ㡪䛜ከᑡ䛒䜛䜒䛾䛾䠈ᇶᮏⓗ䛻䛿ᗄఱᏛⓗ䛺どⅬ䛻ᚑ䛖஦䜢ᐇド䛧䛯䠊(7) 50 nm 㞟ගගᏛ⣔䛾䜘䛖䛺䠈䝘䝜䝯䞊䝖䝹䜸䞊䝎䞊䜈䛾㞟ග䛾㝿䛿䠈཰ᕪ䛾ᙳ㡪䛻䜘䛳䛶䠈䜘䜚㧗䛔䜰䝷䜲䝯䞁䝖⢭ᗘ䛜せồ䛥䜜䜛஦䜢♧䛧䛯䠊➨ 5 ❶䛷䛿䠈㛤Ⓨ䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛾ᛶ⬟ホ౯ᐇ㦂䛻㛵䛧䛶㏙䜉䛯䠊SPring-8 䛻䛚䛔䛶䠈⪃᱌䛧䛯䜰䝷䜲䝯䞁䝖ᡭἲ䛾᭷ຠᛶ䜢♧䛧䠈䜎䛯䠈཯᚟ἲ䜢㐺⏝䛩䜛䛣䛸䛷䠈30 nm 䛾⢭ᗘ䛷ศ๭䝡䞊䝮䛾✵㛫㔜」䛻ᡂຌ䛧䛯䠊㐜ᘏ᫬㛫ㄪᩚ䛾Ⅽ䛾䠈BR ⤖ᬗ䛾┤㐍⛣ື䛾ᙳ㡪䜢ㄪᰝ䛧䛯䠊䜎䛯䠈ᴟⷧ⤖ᬗ䛾᱁Ꮚ㠃䛾‴᭤䛻䜘䛳䛶䝡䞊䝮䛾Ⓨᩓゅ䛜ኚ໬䛧䠈㞟ග䝥䝻䝣䜯䜲䝹䛻ᑐ䛧䛶ᝏᙳ㡪䜢ཬ䜌䛩஦䜢♧䛧䛯䠊SACLA 䛻䛚䛔䛶䜒ᛶ⬟ホ౯䜢⾜䛔䠈ྛ✀デ᩿ἲ䜔䠈⌮᝿㞟ග䛾ᐇ⌧ྍ⬟ᛶ䜢᳨ウ䛧䛯䠊௨ୗ䛻せⅬ䜢䜎䛸䜑䜛䠊(1) 2θ2 䛾ㄪᩚ䛻䛚䛔䛶䠈ග⥺㏣㊧ィ⟬䛸Ⰻ䛟୍⮴䛩䜛䝡䞊䝮఩⨨ᣲື䜢☜ㄆ䛧䠈ග⥺㏣㊧ィ⟬䛾᭷ຠᛶ䜢ᐇド䛧䛯䠊(2) ග※䛛䜙 BM ⤖ᬗ䜎䛷䛾㊥㞳䛜▷䛔ගᏛ⣔䛻䛚䛔䛶᭷ຠ䛺䇾䝟䝷䝺䝹䝅䝣䝖䇿䛻䜘䛳䛶䠈䝣䝷䝑䜽䝇䛾ྲྀ䜚䛣䜌䛧䜢ᢚไ䛧䛴䛴✵㛫㔜」䜢㐩ᡂ䛧䛯䠊䜎䛯䠈཯᚟ἲ䜢᥇⏝䛩䜛䛣䛸䛻䜘䛳䛶䠈0.3µrad ௨ୗ䛻䜎䛷ゅᗘ䝭䝇䝬䝑䝏䜢ᢚไ䛧䠈Ỉᖹ䠈㖄┤୧᪉ྥ䛻䛚䛔䛶 30 nm 䛾⢭ᗘ䛷✵㛫ⓗ䛻㔜」䛥䛫䜛䛣䛸䛻ᡂຌ䛧䛯䠊(3) 㐜ᘏ᫬㛫ㄪᩚ䛻䜘䛳䛶䠈≉䛻 ω 䛾ጼໃኚ໬䛜䜒䛯䜙䛥䜜䜛䛣䛸䜢᫂䜙䛛䛻䛧䛯䠊ㄪᩚ᫬㛫 1 ps ⛬ᗘ䛷䛒䜜䜀䠈Ỉᖹ᪉ྥ䜈䛾ᙳ㡪䛜ᑠ䛥䛔䛣䛸䜢♧䛧䛯䠊䛯䛰䛧䠈኱䛝䛺㐜ᘏ᫬㛫ㄪᩚ䛿 χ 䛾ጼໃኚ໬䜒⏕䛨䛥䛫䜛䛣䛸䜢☜ㄆ䛧䠈ᵓ㐀ⓗ䛻Ᏻᐃ䛺ไᚚ⣔䛾ᚲせᛶ䜢♧䛧䛯䠊(4) 䝖䞊䝍䝹䛷⣙ 28%䛾䝇䝹䞊䝥䝑䝖䜢☜ㄆ䛧䛯䠊Lower 䝟䝇䛻㛵䛧䛶䠈ィ⟬್䛛䜙䛾పୗ䛿ධᑕ䝡䞊䝮䛾ゅᗘᵓ㐀䛻౫Ꮡ䛧䛶䛚䜚䠈TEM00 䝰䞊䝗䛾ධᑕග䛻ᑐ䛧䛶䛿䜋䜌ィ⟬್㏻䜚䛾䝇䝹䞊䝥䝑䝖䛜ᚓ䜙䜜䜛஦䜢♧䛧䛯䠊䜎䛯䠈upper 䝟䝇䛻㛵䛧䛶䛿䠈䝡䞊䝮䝥䝻䝣䜯䜲䝹䛻Ⓨᩓゅ䛾ᣑ኱䛜☜ㄆ䛥䜜䠈᱁Ꮚ㠃䛜‴᭤䛧䛶䛔䜛஦䜢☜ㄆ䛧䛯䠊⌮᝿᱁Ꮚ㠃䛛䜙䛾஘䜜䛻䜘䛳䛶䝇䝹䞊䝥䝑䝖䛜పୗ䛧䛯䛸⪃䛘䜙䜜䜛䠊➨ 6 ❶㻌 ⥲ᣓ

108(5) ☜ㄆ䛥䜜䛯Ⓨᩓゅኚ໬䛾㞟ග䝥䝻䝣䜯䜲䝹䜈䛾ᙳ㡪䜢᳨ウ䛧䛯䠊SACLA 䛻䛚䛔䛶䛿 0.3 µrad⛬ᗘ䛾Ⓨᩓゅ䛾ኚ໬䛻䜘䛳䛶䜒䠈㞟ගᚄ䛿ᩄឤ䛻ᙳ㡪䜢ཷ䛡䜛஦䜢♧䛧䛯䠊(6) SASE 䜢⏝䛔䛯 XFEL 䛻ᑐ䛧䛶ᚲせ୙ྍḞ䛺䠈䝅䝵䝑䝖ẖ䛾ᙉᗘデ᩿䛾ᐇ⌧ྍ⬟ᛶ䜢᳨ウ䛧䛯䠊
BIM4 䛸 BIMEH4 䛸䛾㛫䛻Ⰻ䛔┦㛵䜢☜ㄆ䛧䠈ㄗᕪ±6.7%䛾⢭ᗘ䛷ᙉᗘᐃ䛜ྍ⬟䛷䛒䜛஦䜢♧䛧䛯䠊(7) X ⥺䝇䝖䝸䞊䜽䜹䝯䝷䜢⏝䛔䛶䠈ศ๭䝡䞊䝮㛫䛾⤯ᑐ㐜ᘏ᫬㛫䜢ᐃ䛧䛯䠊䝍䞊䝀䝑䝖䛸䛧䛯㐜ᘏ᫬㛫䛛䜙⣙ 5 ps 䛾㐜ᘏ᫬㛫ㄗᕪ䜢☜ㄆ䛧䠈㐜ᘏ᫬㛫 ᐃ䛾ᚲせᛶ䜢♧䛧䛯䠊ග⥺㏣㊧䛻䜘䜛ぢ✚䜒䜚䛹䛚䜚䠈BR ⤖ᬗ䛾⛣ື㔞䛻ᑐ䛩䜛㐜ᘏ᫬㛫ኚ໬䛿ィ⟬್䛸Ⰻ䛟୍⮴䛧䛯䠊(8) SACLA 䛻䛚䛔䛶䜒 lower 䝡䞊䝮䛻ᑐ䛧䛶⌮᝿ⓗ䛺㞟ග䛜ᐇ⌧䛩䜛஦䜢ᐇド䛧䛯䠊Upper 䝡䞊䝮䛻ᑐ䛧䛶䜒䠈3–4 µm FWHM 䛾㞟ගᚄ䜢㐩ᡂ䛧䛯䠊ཌ䜏ᆒ୍ᛶ䛾㧗䛔 BM ⤖ᬗ䛾䜏ᴟⷧศ๭㡿ᇦ䛻䛚䛔䛶཯ᑕ䛥䛫䛯㝿䠈2 µm FWHM ௨ୗ䛾㞟ගᚄ䛜ᚓ䜙䜜䠈ᴟⷧ⤖ᬗస〇ᢏ⾡䜢᭦䛻ྥୖ䛥䛫䜛䛣䛸䛷䠈ᑗ᮶ⓗ䛻䛿⌮᝿ⓗ䛺㞟ග䛜⾜䛘䜛஦䜢♧䛧䛯䠊ᮏ◊✲䛿䠈୺せ⣲Ꮚ䛷䛒䜛㧗ရ㉁䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䜔䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䛾స〇䠈SPring-8
䜔 SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯䛻䜘䛳䛶୍༊ษ䜚䜢㏄䛘䠈ᛂ⏝䜈ྥ䛡䛯᳨ウ䛾ẁ㝵䜈䛸⛣䜛䛣䛸䛸䛺䜛䠊䛧䛛䛧䠈ගᏛ⣔䛸䛧䛶䛔䛟䛴䛛䛾ㄢ㢟䛜ṧ䛥䜜䛶䛔䜛䛣䛸䜒஦ᐇ䛷䛒䜛䠊௨ୗ䛻౛䜢ᣲ䛢䜛䠊(1) Ἴ㠃䛻஘䜜䜢䜒䛯䜙䛥䛺䛔䝡䞊䝮䝇䝥䝸䝑䝍⤖ᬗ䛾స〇䛻䜘䜛⌮᝿㞟ග䛾ᐇ⌧䠊(2) 㧗ᙉᗘ䠈㧗⧞䜚㏉䛧䝺䞊䝖ග※䛻ᑐ䛩䜛㐺⏝ྍ⬟ᛶ䛾᳨ウ䠊(3) ༢Ⰽศ๭䛾ᐇ⌧䛻䜘䜛ศ๭䝟䝹䝇㛫䛾ྍᖸ΅ᛶ䛾☜ಖ䛸㔞ᏊගᏛศ㔝䜈䛾ᒎ㛤䠊(1) 䛻㛵䛧䛶䛿ႚ⥭䛾ㄢ㢟䛸ゝ䛘䜛䠊䛣䜜䜎䛷స〇䛧䛶䛝䛯୰䛷᭱䜒ရ㉁䛾㧗䛔⤖ᬗ䜢⏝䛔䛯䛸䛧䛶䜒䠈ᮍ䛰⌮᝿㞟ග䛿ᐇ⌧䛧䛶䛔䛺䛔䠊(2) 䛸䜒㛵㐃䛩䜛䛜䠈㧗䛔㏱㐣ᛶ䜢ᚓ䜛䛯䜑䛻 10 µm ⛬ᗘ䛾ཌ䜏䛜ồ䜑䜙䜜䜛䝅䝸䝁䞁䛻䛚䛔䛶䛿䠈䜘䜚㧗ᙉᗘ䛺ග※䛜Ⓩሙ䛧䛯㝿䠈ᮦᩱ≀ᛶⓗ䛺㝈⏺䜢㏄䛘䜛ྍ⬟ᛶ䛜䛒䜛䠊㧗ရ㉁䛺⤖ᬗ䛜ධᡭྍ⬟䛸䛺䛳䛯 [77] 䛣䛸䛛䜙䠈XFEL 䛻䛚䛔䛶䜒䝎䜲䝲䝰䞁䝗䛜ᗈ䛟౑䜟䜜ጞ䜑䛶䛔䜛 [42, 78]䠊䝎䜲䝲䝰䞁䝗䜢฼⏝䛩䜛䛣䛸䛷䠈50–100 µm 䛸䛔䛖ཌ䜏䛻䛚䛔䛶䜒䠈
10 µm ཌ䛾䝅䝸䝁䞁䛸ྠ⛬ᗘ䛾㏱㐣ᛶ䜢♧䛩䠊PCVM 䛿ཎ⌮ୖ䝎䜲䝲䝰䞁䝗䛻ᑐ䛧䛶䜒↓ṍ䜏ຍᕤᮏㄽᩥ䛾䜎䛸䜑䛸௒ᚋ䛾ᒎᮃ

109䛜ྍ⬟䛷䛒䜚䠈୺䛻⏘ᴗᛂ⏝䜈ྥ䛡䠈᪤䛻᳨ウ䛜ጞ䜎䛳䛶䛔䜛䠊䝅䝸䝁䞁䛸ẚ䜉ⴭ䛧䛟ప䛔ຍᕤ䝺䞊䝖䜔䠈⤖ᬗ㠃䛻ᑐ䛩䜛ຍᕤ䛾␗᪉ᛶ➼ㄢ㢟䜒ከ䛔䛜䠈X ⥺⏝䝎䜲䝲䝰䞁䝗⣲Ꮚ䛾స〇䛸䛔䛖ほⅬ䛛䜙䠈᳨ウ䜢ጞ䜑䜛䜉䛝᫬ᮇ䛜ゼ䜜䛯䛾䛛䜒䛧䜜䛺䛔䠊(2) 䛻㛵䛧䛶䠈LCLS 䛻䛚䛔䛶䝣䝹䝟䝽䞊䠈120 Hz 䝰䞊䝗䛷౪⤥䛥䜜䛯 XFEL 䛜ⷧ䛔䝅䝸䝁䞁⤖ᬗ䛻ධᑕ䛥䜜䛯㝿䠈ᑑ࿨䛜䝟䝹䝇᫬㛫㛫㝸䠄⣙ 8 ms䠅䜘䜚䜒㛗䛔䝣䜷䝜䞁䛜ບ㉳䛥䜜䠈཯ᑕ X ⥺䛾Ἴ㠃䛜஘䛥䜜䜛䛣䛸䛜ሗ࿌䛥䜜䛶䛔䜛 [44]䠊䜎䛰ヲ⣽䛺᳨ウ䛜⾜䜟䜜䛶䛔䛺䛔Ⅽ䠈ᮏㄽศ䛻䛿♧䛧䛶䛔䛺䛔䛜䠈SACLA 䛾䝣䝹䝟䝽䞊↷ᑕ䛻䜘䛳䛶䜒ྠᵝ䛾඙ೃ䛜ぢ䛘ጞ䜑䛶䛔䜛䠊European XFEL 䜔LCLS II ➼䠈㟁Ꮚ䝞䞁䝏䛾䝬䜲䜽䝻䝞䞁䝏䞁䜾䛻䜘䛳䛶㧗⧞䜚㏉䛧䝺䞊䝖䛷䝟䝹䝇 X ⥺䛜౪⤥䛥䜜䜛ග※䛸䛾ే⏝䛿䠈ศ๭䞉㐜ᘏගᏛ⣔䛻䛚䛔䛶㔜せ䛷䛒䜛䛜䠈䝣䜷䝜䞁ບ㉳䛿ᠱᛕ஦㡯䛷䛒䜛䠊ཎᏊྠኈ䛾⤖ྜຊ䛜ᙉ䛔䝎䜲䝲䝰䞁䝗䜢⏝䛔䜛䛣䛸䛷䠈ບ㉳䛥䜜䛯䝣䜷䝜䞁䛾᣺ᖜ䠈ᑑ࿨䛾ᢚไ䛜ྍ⬟䛸䛺䜛䠊䜎䛯䠈㧗䛔⇕ఏᑟᛶ䛛䜙䠈X ⥺↷ᑕ䛻䜘䜛⇕䛾Ⓨ⏕䜒ゎỴ䛩䜛᪉ྥ䜈䛸ྥ䛛䛖䛸⪃䛘䜙䜜䠈䝎䜲䝲䝰䞁䝗⤖ᬗ䜈䛾 PCVM ᢏ⾡䛾㐺⏝䛿ᛴົ䛸ゝ䛘䜛䠊(3) 䛻㛵䛧䛶䛿䠈᪤䛻 Si(440) 䜔 Si(511) ➼䛾㧗ḟᅇᢡ㠃䛻ᑐ䛧䛶ᐇ⌧䛧䛶䛔䜛䜒䛾䛾䠈ᅇᢡ䝞䞁䝗ᖜ䛾ᗈ䛔పḟᅇᢡ㠃䛻ᑐ䛧䛶䛿ᮍ䛰ᐇ⌧䛧䛶䛔䛺䛔䠊ཎ⌮ୖ䠈ᛂຊ䛾Ⓨ⏕※䛜Ꮡᅾ䛧䛺䛡䜜
䜀䠈PCVM ຍᕤ䛻䜘䜛ⷧ໬䛻䜘䛳䛶䛹䜜䛰䛡ⷧ䛔⤖ᬗ䛷䜒స〇䛿ྍ⬟䛺䛿䛪䛷䛒䜛䠊⤖ᬗస〇䝥䝻䝉䝇䜢䜒䛖୍ᗘぢ㏉䛧䠈ᛂຊ䛾Ⓨ⏕※䛥䛘䛴䛛䜐䛣䛸䛜ฟ᮶䜜䜀䠈Si(111) ⤖ᬗ䛻ᑐ䛧䛶䜒༑ศᐇ⌧䛿ྍ⬟䛰䛸⪃䛘䜙䜜䜛䠊ᴟⷧ⤖ᬗ䛻䜘䜛༢Ⰽศ๭䛜ᐇ⌧䛩䜜䜀䠈᫬✵㛫䝰䞊䝗䛾ྠ୍䛺䠈䇺䝺䝥䝸䜹䇻䝟䝹䝇䛜⏕ᡂ䛥䜜䜛䠊ྍᖸ΅ᛶ䜢⏕䛛䛧䛯᪂䛯䛺ᒎ㛤䜔䠈X ⥺㡿ᇦ䛻䛚䛡䜛㔞ᏊගᏛⓗ䛺⌧㇟䛾ほᐹ➼䠈ᵝ䚻䛺ྍ⬟ᛶ䜢⛎䜑䛶䛔䜛䠊㌾ X ⥺⏝ศ๭䞉㐜ᘏගᏛ⣔ [29] 䛻⏝䛔䜙䜜䛶䛔䜛䜘䛖䛺䠈⣲Ꮚ䜶䝑䝆㒊䜢฼⏝䛧䛯Ἴ㠃ศ๭䜢䠈⤖ᬗ⣲Ꮚ䛻䜘䛳䛶ᐇ⌧䛩䜛䛣䛸䛷䠈༢Ⰽศ๭䛿ẚ㍑ⓗᐜ᫆䛻㐩ᡂ䛥䜜䜛䠊ཌ䛔⤖ᬗ䛷䛒䜛䛯䜑䠈䝣䜷䝜䞁ບ㉳➼䛾ᠱᛕ䜒↓䛟䠈ᐇ⌧ྍ⬟ᛶ䛿㧗䛔䛸⪃䛘䜙䜜䜛䛜䠈䜶䝑䝆㒊䛾⤖ᬗ᏶඲ᛶ䜢ಖ䛴䛣䛸䛜ᢏ⾡ⓗ䛻ᅔ㞴䛷䛒䜛䛣䛸䠈䜶䝑䝆㒊䛛䜙䛾ᩓ஘䛻䜘䜚䝇䝨䝑䜽䝹䛜⏕䛨䜛䛣䛸➼䠈✵㛫䝰䞊䝗䛿஘䛥䜜䜛䠊䜎䛯䠈ศ๭䝡䞊䝮䜢✵㛫ⓗ䛻㔜」䛥䛫䜛Ⅽ䛻䛿ゅᗘ䛾䝭䝇䝬䝑䝏䛜Ḟ䛛䛫䛪䠈฼⏝䛻䛿ៅ㔜䛺᳨ウ䛜ᚲせ䛷䛒䜛䠊」ᩘ䛾 X ⥺䝟䝹䝇䜢⏝䛔䛯㉸㧗㏿䝎䜲䝘䝭䜽䝇◊✲䛿䜎䛰ጞ䜎䛳䛯䜀䛛䜚䛾䠈Ⓨᒎ㏵ୖ䛾◊✲㡿ᇦ䛷䛒䜛䠊ᮏ◊✲䛻䛚䛔䛶㛤Ⓨ䛧䛯ศ๭䞉㐜ᘏගᏛ⣔䛻䜘䛳䛶䠈᥈⣴ྍ⬟䛺᫬㛫㡿ᇦ䛾ᣑ኱䛸䛔䛖᪂䛯䛺ྍ⬟ᛶ䜢ษ䜚ᣅ䛝䠈ᑗ᮶ⓗ䛻ᗈ䛟ே㢮䛾Ⓨᒎ䜈㈉⊩䛩䜛䛣䛸䜢ᮇᚅ䛩䜛䠊ཧ⪃ᩥ⊩㻌[1]

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K. Yamauchi, K. Yamamura, H. Mimura, Y. Sano, A. Saito et al., “Nearly diffraction-limited line focusingof a hard-X-ray beam with an elliptically figured mirror,” J. Synchrotron Rad. 9, 313–316 (2002).

[72]

W. H. Carter, “Focal shift and concept of effective Fresnel number for a Gaussian laser beam,” Appl. Opt.
21, 1989–1994 (1982).

[73]

Y. Li and E. Wolf, “FOCAL SHIFT IN FOCUSED TRUNCATED GAUSSIAN BEAMS,” Opt. Commun.
42, 151–156 (1982).

[74]

S. Matsuyama, H. Mimura, H. Yumoto, Y. Sano, K. Yamamura et al., “Development of scanning X-ray
fluorescence microscope with spatial resolution of 30 nm using K-B mirrors optics,” Rev. Sci. Instrum.
77, 103102 (2006).

[75]

K. Tono, T. Kudo, M. Yabashi, T. Tachibana, Y. Feng et al., “Single-shot beam-position monitor for x-ray
free electron laser,” Rev. Sci. Instrum. 82, 023108 (2011).

[76]

T. Tanaka, M. Kato, T. Kurosawa, Y. Morishita, N. Saito et al., “Improvement of a cryogenic radiometer
for XFEL absolute intensity measurement,” Nucl. Instrum Meth. Phys. Res. A 659, 528–530 (2011).

[77]

Y. Shvyd’ko, S. Stoupin, V. Blank and S. Terentyev, “Near 100% Bragg Reflectivity of X-rays,” Nat.
Photon. 5, 539–542 (2011).

[78]

Y. Feng, R. Alonso-Mori, V. Blank, S. Boutet, M. Chollet et al., “Recent development of thin diamond
crystals for X-ray FEL beam-sharing,” Proc. SPIE 8778, 87780B (2013).

◊✲ᴗ⦼
୺䛯䜛◊✲ㄽᩥ
[1]

T. Osaka, T. Hirano, Y. Sano, Y. Inubushi, S. Matsuyama, K. Tono, T. Ishikawa, K. Yamauchi
and M. Yabashi“Wavelength-tunable split-and-delay optical system for hard X-ray free-electron lasers”
submitted.

[2]

T. Osaka, T. Hirano, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, K. Ogawa,
S. Matsuyama, T. Ishikawa and K. Yamauchi“Development of split-delay x-ray optics using Si(220) crystals at SACLA”
Proceedings of SPIE 9210, 921009 (2014).

[3]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, K. Ogawa, S. Matsuyama,
T. Ishikawa and K. Yamauchi“Thin crystal development and applications for hard x-ray free-electron lasers”
Proceedings of SPIE 8848, 88480S (2013).

[4]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“A Bragg beam splitter for hard x-ray free-electron lasers”
Optics Express 21, 2823–2831 (2013).

117

◊✲ᴗ⦼

118
[5]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of a Bragg beam splitter for hard x-ray free-electron lasers”
Journal of Physics: Conference Series 425, 052014 (2013).

[6]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of ultrathin Bragg beam splitter by plasma chemical vaporization machining”
Key Engineering Materials 523–524, 40–45 (2012).

୺䛯䜛ᅜ㝿఍㆟ሗ࿌
[1]

T. Osaka (invited)“Current status on x-ray split-and-delay optics using Si(220) crystals at SACLA”
7th Ringberg Workshop on Science with FELs, Ringberg, Germany, February 7–10, 2016
(Oral presentation).

[2]

T. Osaka, T. Hirano, Y. Inubushi, Y. Sano, S. Matsuyama, K. Tono, T. Katayama, T. Ishikawa,
K. Yamauchi and M. Yabashi“Demonstration of Feasibility of X-ray Pump–X-ray Probe Experiments Using Hard X-ray
Split-and-Delay Optics Combined with Focusing Mirrors”
The 12th International Conference on Synchrotron Radiation Instrumentation (SRI 2015),
New York, NY, USA, July 6–10, 2015 (Oral presentation, Thu-F-3).

[3]

T. Osaka (invited)“Current status of a hard x-ray split-and-delay scheme at SACLA”
Pre-conference satellite meeting on dynamic imaging: from AMO/Chemistry to Bio.
(HeKKSaGOn University Consortium The 4th Japanese–German University Presidents’Conference), Miyagi, Japan, April 16, 2015 (Oral presentation).

◊✲ᴗ⦼

[4]

119

T. Osaka, T. Hirano, Y. Inubushi, M. Yabashi, Y. Sano, S. Matsuyama, K. Tono, T. Sato,K. Ogawa, T. Ishikawa and K. Yamauchi“Development of Hard X-Ray Split-Delay Optics Based on Si(220) Crystals”
JSAP-OSA Joint Symposia 2014 (The 75th JSAP Autum Meeting 2014),
Hokkaido, Japan, September 17–20, 2014 (Oral presentation, 17p-C4-3).

[5]

T. Osaka (invited), T. Hirano, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, K. Ogawa,
S. Matsuyama, T. Ishikawa and K. Yamauchi“Development of split-delay x-ray optics using Si(220) crystals at SACLA”
SPIE Optics+Photonics 2014, San Diego, CA, USA, August 17–21, 2014
(Oral presentation, 9210-8).

[6]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of Thin Si Crystal for X-Ray Beam Splitter”
28th The American Society for Precision Engineering Annual Meeting,Saint Paul, MN, USA, October 20–25, 2013 (Poster presentation, 3778).

[7]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, K. Ogawa, S. Matsuyama,
T. Ishikawa and K. Yamauchi“Thin crystal development and applications for hard x-ray free-electron lasers”
SPIE Optics+Photonics 2013, San Diego, CA, USA, August 26–29, 2013
(Oral presentation, 8848-3).

[8]T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of ultrathin Bragg beam splitter by plasma chemical vaporization machining”
14th International Conference on Precision Engineering (ICPE 2012),
Hyogo, Japan, November 8–10, 2012 (Oral presentation, A13).

◊✲ᴗ⦼

120
[9]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of a Bragg Beam Splitter Based on Ultrathin Silicon Single Crystal”
5th International Symposium on Atomically Controlled Fabrication Technology,
Osaka, Japan, October 22–24, 2012 (Poster presentation, P31).

[10]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of a Bragg beam splitter for hard X-ray free-electron laser”
The 11th International Conference on Synchrotron Radiation Instrumentation (SRI 2012),
Lyon, France, July 9–13, 2012 (Poster presentation, WE-E-P-37).

[11]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Fabrication of a Bragg beam splitter for an X-ray autocorrelator”
International Workshop on Phase Retrieval and Coherent Scattering (Coherence 2012),
Fukuoka, Japan, June 18–21, 2012 (Poster presentation, PS-17).

[12]

T. Osaka, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, S. Matsuyama, T. Ishikawa andK. Yamauchi“Thin-crystal & auto-correlator development at SPring-8,”
4th XFEL 3-site meeting, Hyogo, Japan, October 30–November 3, 2011 (Oral presentation).

䛭䛾௚ᅜ㝿఍㆟ሗ࿌
[1]

T. Hirano, T. Osaka, Y. Inubushi, Y. Sano, S. Matsuyama, K. Tono, T. Ishikawa, K. Yamauchi
and M. Yabashi“Development of split-delay optics with wide range of photon energy for XFEL pump/XFEL
probe experiments”
SPIE Optics+Photonics 2015, San Diego, CA, USA, August 9–13, 2015.

◊✲ᴗ⦼

[2]

121

T. Hirano, T. Osaka, Y. Inubushi, M. Yabashi, Y. Sano, S. Matsuyama, K. Tono, K. Ogawa,T. Ishikawa and K. Yamauchi“Development of Autocorrelator for Hard X-ray Free-Electron Laser”
The 1st International Symposium on Interactive Materials Science Cadet Program (iSIMSC),
Osaka, Japan, November 16–19, 2014.

[3]

W. Roseker, S. Lee, M. Walther, H. Schulte-Schrepping, T. Osaka, M. Sikorski, S. Song,P. H. Fuoss, G. B. Stephenson, A. Robert and G. Grübel“Hard X-ray Delay Line for X-ray Photon Correlation Spectroscopy”
International Conference on Phase Retrieval and Coherent Scattering (Coherence 2014),
Evanston, IL, USA, September 2–5, 2014.

୺䛯䜛ᅜෆ఍㆟ሗ࿌
[1]኱ᆏὈᩯ䠈ᖹ㔝ᔞ䠈≟అ㞝୍䠈బ㔝Ὀஂ䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䠈▮ᶫ∾ྡ
䇾XFEL ⏝ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ––SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯––䇿
➨ 29 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈༓ⴥ䠈2016 ᖺ 1 ᭶ 9–11 ᪥䠄ཱྀ㢌Ⓨ⾲䠈3D002䠅䠊

[2]

኱ᆏὈᩯ䠈ᖹ㔝ᔞ䠈≟అ㞝୍䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾⤖ᬗගᏛ⣲Ꮚ䛻ᇶ䛵䛟 X ⥺ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ––㞟ගගᏛ⣔ే⏝᫬䛾✵㛫ⓗ㔜」
䛾ᐇ⌧––䇿
2015 ᖺᗘ⢭ᐦᕤᏛ఍᫓Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈ᮾி䠈2015 ᖺ 3 ᭶ 17–19 ᪥䠄ཱྀ㢌Ⓨ⾲䠈R30䠅䠊

[3]኱ᆏὈᩯ䠈ᖹ㔝ᔞ䠈≟అ㞝୍䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈▼ᕝဴஓ䠈ᒣෆ࿴ே
䇾XFEL ⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ䠗㻌 KB 䝭䝷䞊ගᏛ⣔ే⏝᫬䛾✵㛫ⓗ㔜」䛾ᐇ⌧䇿
➨ 28 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈⁠㈡䠈2015 ᖺ 1 ᭶ 10–12 ᪥䠄ཱྀ㢌Ⓨ⾲䠈2B002䠅䠊

122

◊✲ᴗ⦼

[4]

኱ᆏὈᩯ䠈ᖹ㔝ᔞ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே
䇾XFEL ⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ䠗㻌 䝏䝱䝛䝹䜹䝑䝖⤖ᬗෆቨ㒊䛾↓ṍ䜏䞉ᖹ⁥໬䇿
➨ 27 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈ᗈᓥ䠈2014 ᖺ 1 ᭶ 11–13 ᪥䠄ཱྀ㢌Ⓨ⾲䠈3D003䠅䠊

[5]኱ᆏὈᩯ䠈ᖹ㔝ᔞ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾኱Ẽᅽ䝥䝷䝈䝬䛻䜘䜛䝏䝱䝛䝹䜹䝑䝖༢⤖ᬗ䝅䝸䝁䞁䛾ෆቨ䜶䝑䝏䞁䜾䛾᳨ウ䇿
2013 ᖺᗘ⢭ᐦᕤᏛ఍⛅Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈኱㜰䠈2013 ᖺ 9 ᭶ 12–14 ᪥䠄ཱྀ㢌Ⓨ⾲䠈L33䠗 䝫䝇䝍䞊Ⓨ⾲䠈P-113䠅䠊[6]኱ᆏὈᩯ䠈బ⸨ᑲὒ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈▮ᶫ∾ྡ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾䝡䞊䝮䝇䝥䝸䝑䝍䜢฼⏝䛧䛯䛭䛾ሙ XFEL 䝍䜲䝭䞁䜾䝆䝑䝍䞊ィ䝅䝇䝔䝮䛾㛤Ⓨ䇿➨ 60 ᅇᛂ⏝≀⌮Ꮫ఍᫓ᏘᏛ⾡ㅮ₇఍䠈⚄ዉᕝ䠈2013 ᖺ 3 ᭶ 27–30 ᪥䠄ཱྀ㢌Ⓨ⾲䠈28p-B1-8䠅䠊

[7]኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾XFEL ⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ䠗㻌 Si(220)䝡䞊䝮䝇䝥䝸䝑䝍䛾స〇䇿
➨ 26 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈ឡ▱䠈2013 ᖺ 1 ᭶ 12–14 ᪥䠄䝫䝇䝍䞊Ⓨ⾲䠈14P023䠅䠊

[8]኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾኱Ẽᅽ䝥䝷䝈䝬䜶䝑䝏䞁䜾䜢⏝䛔䛯䝤䝷䝑䜾䝡䞊䝮䝇䝥䝸䝑䝍䛾స〇䇿
2012 ᖺᗘ⢭ᐦᕤᏛ఍⛅Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈⚟ᒸ䠈2012 ᖺ 9 ᭶ 14–16 ᪥䠄ཱྀ㢌Ⓨ⾲䠈F13䠅䠊

◊✲ᴗ⦼

[9]

123

኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾䝤䝷䝑䜾⤖ᬗ䛻䜘䜛◳ X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊⏝䝝䞊䝣䝡䞊䝮䝇䝥䝸䝑䝍䇿➨ 59 ᅇᛂ⏝≀⌮Ꮫ㛵ಀ㐃ྜㅮ₇఍䠈ᮾி䠈2012 ᖺ 3 ᭶ 15–18 ᪥䠄ཱྀ㢌Ⓨ⾲䠈18p-B5-1䠅䠊[10]኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾◳ X ⥺ FEL ⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ––䝡䞊䝮䝇䝥䝸䝑䝍䛾స〇––䇿
➨ 25 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈బ㈡䠈2012 ᖺ 1 ᭶ 6–9 ᪥䠄䝫䝇䝍䞊Ⓨ⾲䠈9P005䠅䠊

[11]኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே
䇾Plasma Chemical Vaporization Machining 䛻䜘䜛◳ X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾䛯䜑䛾䝤䝷䝑䜾⤖ᬗ䝡䞊䝮䝇䝥䝸䝑䝍䛾స〇䇿⢭ᐦᕤᏛ఍ 2011 ᖺᗘ㛵すᨭ㒊ᆅ᪉ᐃᮇᏛ⾡ㅮ₇఍䠈රᗜ䠈2011 ᖺ 6 ᭶ 30 ᪥䠄䝫䝇䝍䞊Ⓨ⾲䠈P-17䠅䠊[12]኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾◳ X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊⏝䜸䞊䝖䝁䝸䝺䞊䝍䛻⏝䛔䜛 Si 䝡䞊䝮䝇䝥䝸䝑䝍䛾స〇䞉ホ౯䇿2011 ᖺᗘ⢭ᐦᕤᏛ఍᫓Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈ᮾி䠈2011 ᖺ 3 ᭶ 14–16 ᪥䠄ཱྀ㢌Ⓨ⾲䠈G15䠅䠊

[13]኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾XFEL ⏝䜸䞊䝖䝁䝸䝺䞊䝍䛻⏝䛔䜛❆ᆺ Si 䝡䞊䝮䝇䝥䝸䝑䝍䛾ຍᕤ䞉ホ౯䇿
➨ 24 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈Ⲉᇛ䠈2011 ᖺ 1 ᭶ 8–10 ᪥䠄ཱྀ㢌Ⓨ⾲䠈3B006䠅䠊

◊✲ᴗ⦼

124

䛭䛾௚ᅜෆ఍㆟ሗ࿌
[1]ᖹ㔝ᔞ䠈኱ᆏὈᩯ䠈బ㔝Ὀஂ䠈≟అ㞝୍䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䠈▮ᶫ∾ྡ
䇾XFEL ⏝ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ––Ἴ㠃ศ๭ᆺ䝡䞊䝮䝇䝥䝸䝑䝍䛾᳨ウ––䇿
➨ 29 ᅇᨺᑕගᏛ఍ᖺ఍䞉ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈༓ⴥ䠈2016 ᖺ 1 ᭶ 9–11 ᪥䠊[2]ᖹ㔝ᔞ䠈኱ᆏὈᩯ䠈బ㔝Ὀஂ䠈≟అ㞝୍䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䠈▮ᶫ∾ྡ䇾◳ X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊⏝ศ๭䞉㐜ᘏගᏛ⣔䛾㛤Ⓨ䠄➨ 3 ሗ䠅㻌 –SACLA 䛻䛚䛡䜛ᛶ⬟ホ౯–䇿2015 ᖺᗘ⢭ᐦᕤᏛ఍⛅Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈ᐑᇛ䠈2015 ᖺ 9 ᭶ 4–6 ᪥䠊[3]ᖹ㔝ᔞ䠈኱ᆏὈᩯ䠈≟అ㞝୍䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈▼ᕝဴஓ䠈ᒣෆ࿴ே
䇾XFEL ⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ䠗㻌 ᗄఱ䞉ἼືගᏛィ⟬䛻ᇶ䛵䛟䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ䇿
➨ 28 ᅇ᪥ᮏᨺᑕගᏛ఍ᖺ఍ᨺᑕග⛉Ꮫྜྠ䝅䞁䝫䝆䜴䝮䠈⁠㈡䠈2015 ᖺ 1 ᭶ 10–12 ᪥䠊[4]ᖹ㔝ᔞ䠈኱ᆏὈᩯ䠈≟అ㞝୍䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾◳ X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ––䜰䝷䜲䝯䞁䝖ᡭἲ䛾᳨ウ––䇿
2014 ᖺᗘ⢭ᐦᕤᏛ఍⛅Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈㫽ྲྀ䠈2014 ᖺ 9 ᭶ 16–18 ᪥䠊[5]ᖹ㔝ᔞ䠈኱ᆏὈᩯ䠈≟అ㞝୍䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈ᯇᒣᬛ⮳䠈Ⓩ㔝೺௓䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾◳ X ⥺⮬⏤㟁Ꮚ䝺䞊䝄䞊⏝䜸䞊䝖䝁䝸䝺䞊䝍䛾㛤Ⓨ––χ ㍈ᅇ㌿䛻ᑐ䛩䜛チᐜゅᗘㄗᕪ䛾᳨ウ––䇿⢭ᐦᕤᏛ఍㛵すᨭ㒊 2014 ᖺᗘ㛵すᆅ᪉ᐃᮇᏛ⾡ㅮ₇఍䠈኱㜰䠈2014 ᖺ 7 ᭶ 4 ᪥䠊

◊✲ᴗ⦼

[6]

ᖹ㔝ᔞ䠈኱ᆏὈᩯ䠈▮ᶫ∾ྡ䠈బ㔝Ὀஂ䠈Ⓩ㔝೺௓䠈≟అ㞝୍䠈బ⸨ᑲὒ䠈ᑠᕝዌ䠈ᯇᒣᬛ⮳䠈▼ᕝဴஓ䠈ᒣෆ࿴ே䇾኱Ẽᅽ䝥䝷䝈䝬䛻䜘䜛䝏䝱䝛䝹䜹䝑䝖༢⤖ᬗ䝅䝸䝁䞁䛾ෆቨ䜶䝑䝏䞁䜾䇿2014 ᖺᗘ⢭ᐦᕤᏛ఍᫓Ꮨ኱఍Ꮫ⾡ㅮ₇఍䠈ᮾி䠈2014 ᖺ 3 ᭶ 18–20 ᪥䠊

ཷ㈹
[1]

኱ᆏὈᩯ
䇾JSR2016 Ꮫ⏕Ⓨ⾲㈹䇿
බ┈♫ᅋἲே㻌 ᪥ᮏᨺᑕගᏛ఍䠈2016 ᖺ 1 ᭶ 18 ᪥

[2]

኱ᆏὈᩯ
䇾2011 ᖺᗘ⢭ᐦᕤᏛ఍⛅Ꮨ኱఍Ꮫ⾡ㅮ₇఍䝧䝇䝖䝥䝺䝊䞁䝔䞊䝅䝵䞁㈹䇿
බ┈♫ᅋἲே㻌 ⢭ᐦᕤᏛ఍䠈2011 ᖺ 9 ᭶ 22 ᪥䠊

[3]

኱ᆏὈᩯ
䇾⢭ᐦᕤᏛ఍ 2011 ᖺᗘ㛵すᆅ᪉ᐃᮇᏛ⾡ㅮ₇఍䝧䝇䝖䝫䝇䝍䞊䝥䝺䝊䞁䝔䞊䝅䝵䞁㈹䇿
බ┈♫ᅋἲே㻌 ⢭ᐦᕤᏛ఍㛵すᨭ㒊䠈2011 ᖺ 6 ᭶ 30 ᪥䠊

125௜㘓A

X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ
A-1. ືຊᏛ⌮ㄽ䛾ᑟධ㻌X ⥺ᅇᢡᢏ⾡䛿䠈⤖ᬗᮦᩱ䜔⤖ᬗ໬䛥䜜䛯⏕యศᏊ䛾ᵓ㐀Ỵᐃ䛺䛹䠈䛒䜙䜖䜛ศ㔝䛻䛚䛔䛶ᗈ䛟⏝䛔䜙䜜䛶䛔䜛ᢏ⾡䛷䛒䜛䠊䛭䜜䜙䛾ከ䛟䛿 1912 ᖺ䛻 Laue 䛻䜘䛳䛶Ⓨ⾲䛥䜜䛯㐠ືᏛⓗ⌮ㄽ[A1] 䛻ᇶ䛵䛔䛶䛔䜛䠊䛣䛾⌮ㄽ䛿࿘ᮇⓗ䛻㓄⨨䛥䜜䛯ཎᏊ䛻䜘䛳䛶ᩓ஘䛥䜜䛯 X ⥺Ἴືሙྠኈ䛾ග㊰㛗䛾ᕪ䛾䜏䜢⪃៖䛧䛶䛔䜛䠊ᅇᢡ X ⥺ᙉᗘ䛿䠈1 䛴䛾༢఩᱁Ꮚ䛛䜙䛾ᅇᢡᙉᗘ䛻 X ⥺↷ᑕ䝪䝸䝳䞊䝮ෆ䛾༢఩᱁Ꮚ䛾ᩘ䜢༢⣧䛻᥃䛡ྜ䜟䛫䛯್䛸䛧䛶⾲⌧䛥䜜䜛䠊䛴䜎䜚䠈1 䛴䛾 X ⥺ගᏊ䛿፹㉁୰䛷 1 ᅇ䛰䛡┦஫స⏝䜢⾜䛖䇾1 ᅇᩓ஘㏆ఝ䇿䜢㐺⏝䛧䛶䛚䜚䠈」ᩘᅇ䛾┦஫స⏝䜔␗䛺䜛༢఩᱁Ꮚ㛫䛾ᖸ΅䛿↓ど䛥䜜䛶䛔䜛䠊X ⥺䛸≀㉁䛸䛾┦஫స⏝䛿୍⯡ⓗ䛻㠀ᖖ䛻ᙅ䛔䛣䛸䛛䜙䠈䜋䛸䜣䛹䛾䜰䝥䝸䜿䞊䝅䝵䞁䛻ᑐ䛧䛶䛣䛾⌮ㄽ䛿ṇ䛧䛟ᶵ⬟䛩䜛䠊䛧䛛䛧䠈䝅䝸䝁䞁䜔䝎䜲䝲䝰䞁䝗➼䠈ᕧどⓗ䛺⤖ᬗ᏶඲ᛶ䜢᭷䛩䜛፹㉁䛻䛚䛡䜛ᅇᢡ≉ᛶ䛿䛣䛾⌮ㄽ䛷䛿ㄝ᫂䛧䛝䜜䛺䛔䠊䛭䛣䛷ྛ༢఩᱁Ꮚ
䛛䜙ᅇᢡ䛥䜜䛯 X ⥺Ἴືሙྠኈ䛾ᖸ΅䜢䜒⪃៖䛧䛯䠄䛔䜟䜖䜛䠈䇾ከ㔜ᩓ஘䇿䠅䠈䇾ືຊᏛ⌮ㄽ䇿䛜ᑟධ䛥䜜䛯䠊䛣䛾⌮ㄽ䛿䠈Darwin [A2] 䜔 Ewald [A3]䠈Laue [A4] ➼䜢௦⾲䛸䛩䜛ከ䛟䛾≀⌮Ꮫ⪅䛻䜘䛳䛶Ὑ⦎䛥䜜䠈Batterman 䛸 Cole 䛻䜘䛳䛶䝺䝡䝳䞊ㄽᩥ [A5] 䛜Ⓨ⾲䛥䜜䛯䛣䛸䛷ୡ⏺୰䛻ᗈ䜎䛳䛯䠊ᮏ௜㘓䛷䛿䠈Authier 䛻䜘䛳䛶ᇳ➹䛥䜜䛯䝔䜻䝇䝖 [A6] 䛻ᇶ䛵䛝 X ⥺䛾ືຊᏛ⌮ㄽ䛾ゎㄝ䠈䛭䛧䛶⤖ᬗ䛾 Darwin 䜹䞊䝤䛾ィ⟬䜔」⤖ᬗ㓄⨨䛻㛵䛧䛶䜎䛸䜑䜛䠊ືຊᏛ⌮ㄽ䛷䛿፹㉁ቃ⏺䛻䛚䛡䜛ᒅᢡ䛾ຠᯝ䜢⪃៖䛧䛶䛔䜛䠊ቃ⏺᮲௳䜢どぬⓗ䛻⌮ゎ䛩䜛Ⅽ䛻䠈㏫✵㛫䛷䛾ศᩓ⌫䛜⏝䛔䜙䜜䜛䠊䛣䛾⪃䛘᪉䛿㙾㠃཯ᑕ䛻䛚䛡䜛ቃ⏺᮲௳䜢᳨ウ䛩䜛㝿䛻䜒䜘䛟⏝䛔䜙䜜䜛䠄Fig. A-1䠅䠊Ⅼ⥺䠈ᐇ⥺㠃䛾༙ᚄ䛿䛭䜜䛮䜜┿✵䛻䛚䛡䜛Ἴᩘ䠄K = 1/λ䠅䠈፹㉁ෆ䛷䛾Ἴᩘ䠄k = nK䠅䛷䛒䜛䠊䛣䛣䛷 λ 䛸 n 䛿䛭䜜䛮䜜Ἴ㛗䛸፹㉁䛾ᒅᢡ⋡䜢♧䛧䛶䛔䜛䠊䝧䜽䝖䝹 K0, k0,
Ks 䛸 Kc 䛿䛭䜜䛮䜜ධᑕἼ䠈ᒅᢡἼ䠈཯ᑕἼ䛸ᩳධᑕゅ䛜⮫⏺ゅ䠄ωc䠅䛾᫬䛾ධᑕἼ䛾Ἴᩘ䝧䜽䝖䝹䜢♧䛧䛶䛔䜛䠊ྛศᩓ㠃䛾୰ᚰⅬ I 䛸䠈K0 䛸Ⅼ⥺㠃䛸䛾஺Ⅼ䜢㏻䜛ቃ⏺䛾ἲ⥺䝧䜽䝖䝹 n 䛸ᐇ⥺㠃䛸
127௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

128

Fig. A-1.

Schematic of refraction and specular reflection at a boundary of different
media in reciprocal space.

Fig. A-2.

Dispersion surface utilized in dynamical theory.

A-1㻌 ືຊᏛ⌮ㄽ䛾ᑟධ

129

䛾஺Ⅼ䜢⤖䜣䛰䝧䜽䝖䝹䛜 k0 䛸䛺䜛䠊ධᑕ䝧䜽䝖䝹 Kc 䛻ᑐ䛩䜛ᒅᢡἼᩘ䝧䜽䝖䝹 k 䛿ቃ⏺㠃䛸ᖹ⾜䛸䛺䜛䠊ᚑ䛳䛶䠈ᩳධᑕゅ䛜⮫⏺ゅ䜘䜚䜒ᑠ䛥䛔䛸䛝䠈፹㉁ෆ䛷 k 䛜⾲⌧䛷䛝䛺䛟䛺䜛䠄ᐇ㒊䛜 0 䛸䛺䜛䠅䛯䜑඲཯ᑕ䛜⏕䛨䜛䠊ືຊᏛ⌮ㄽ䛷⏝䛔䜙䜜䜛ศᩓ㠃䛾ᴫ␎ᅗ䜢 Fig. A-2 䛻♧䛩䠊䛣䛣䛷䠈2 ᪉ྥ䛻㐍⾜䛩䜛༢Ⰽᖹ㠃Ἴ䛷䛒䜛ᒅᢡἼ䠄O Ἴ䠅䛸ᅇᢡἼ䠄H Ἴ䠅䛾䜏䛻䜘䜛Ἴືሙ䜢⪃䛘䜛䠄2 Ἴ㏆ఝ䠅䠊Ⅼ O 䛸 H 䜢୰ᚰ䛸䛩䜛䛭䜜䛮䜜䛾┿✵䠄፹㉁ෆ䠅䛻䛚䛡䜛ศᩓ㠃䜢 T’O䠄TO䠅䛸 T’H䠄TH䠅䛸ᐃ⩏䛩䜛䠊䛣䛣䛷 OH 䛿ὀ┠䛩䜛᱁Ꮚ㠃䛾㏫᱁Ꮚ䝧䜽䝖䝹 h 䛸䛺䜛䠊䛭䜜䛮䜜Ἴ䛜ᐦ᥋䛻㛵ಀ䛧䛶䛔䜛䛣䛸䜢♧䛩ඹ㏻➃Ⅼ P 䛿
Ewald 䛻䜘䛳䛶 tiepoint 䛸ྡ䛵䛡䜙䜜䛯䠄Laue 䛿 Anregungspunkt 䛸࿧䜣䛰䛜䠈䛣䛣䛷䛿 tiepoint 䜢᥇⏝䛩䜛䠅䠊X ⥺Ἴືሙ䛾ᅇᢡ䠈ఏ᧛䠈⤖ᬗෆ䛷䛾ᖸ΅䛾඲䛶䛾ᛶ㉁䛿Ἴືሙ䛸ศᩓ㠃䛸䛾㛵ಀ䛛䜙グ㏙䛷䛝䜛䠊
ᒅᢡ䛾ຠᯝ䜢↓ど䛩䜛㐠ືᏛⓗ⌮ㄽ䛻䛚䛔䛶䠈Bragg ᮲௳䛿 tiepoint P 䛜 T’O 䛸 T’H 䛸䛾஺Ⅼ
䠄Laue point䠈La䠅䛻఩⨨䛩䜛䛸䛝䛻‶䛯䛥䜜䜛䠊La 䛿࿘ᅖ䛻᭷ຠ㡿ᇦ䜢᭷䛧䛶䛚䜚䠈䛭䛾㡿ᇦෆ䛻 P䛜఩⨨䛩䜛㝿䜒 Bragg ᅇᢡ䛜⏕䛨䜛䠊᭷ຠ㡿ᇦ䛾኱䛝䛥䛿⤖ᬗ⢏䛾኱䛝䛥䛸䝣䞊䝸䜶㛵ಀ䛷⤖䜀䜜䜛䠊ᚑ䛳䛶䠈䝰䝄䜲䜽⤖ᬗ䛾䜘䛖䛻᭷㝈䛾⤖ᬗ⢏䜢᭷䛩䜛⣔䛻䛚䛔䛶䠈㐠ືᏛⓗ⌮ㄽ䛿᭷㝈䛾ゅᗘ⠊ᅖ䛻䛚䛔䛶 Bragg ᮲௳䛜‶䛯䛥䜜䜛஦䜢ᑟ䛟୍᪉䛷䠈༙↓㝈䛾ཌ䜏䜢᭷䛩䜛᏶඲⤖ᬗ䛻䛚䛔䛶᭷ຠ㡿ᇦ䛿Ⅼ䛸䛺䜛䠊䛧䛛䛧䛺䛜䜙䠈ᐇ㝿䛻䛿༙↓㝈⤖ᬗ䛻ᑐ䛧䛶䜒䠈᭷㝈䛾ゅᗘ⠊ᅖ䛻䛚䛔䛶䛾䜏 Bragg ᮲௳䛿‶䛯䛥䜜䜛䠊ᒅᢡ䛾䜏䜢⪃៖䛧䛶䜒ྠᵝ䛷䛒䜚䠈P 䛜 TO 䛸 TH 䛸䛾஺Ⅼ䛷䛒䜛 Lorentz
point (Lo) 䛻఩⨨䛩䜛䛸䛝䛾䜏 Bragg ᮲௳䛜‶䛯䛥䜜䜛䛣䛸䛻䛺䜛䠊ືຊᏛ⌮ㄽ䛷䛿䠈Lo ࿘㎶䛻䛚䛔䛶ศᩓ㠃䛾᥋⥆㡿ᇦ䜢ᑟධ䛩䜛䛣䛸䛷䛣䛾ၥ㢟䜢ඞ᭹䛧䛯䠊ᑟධ䛾Ⅽ䛾⌮ㄽ䛿ᮏ◊✲䛾⠊␪䜢㉺䛘䜛䛯䜑๭ឡ䛩䜛䛜䠈᥋⥆㡿ᇦୖ䛻 P 䛜఩⨨䛩䜛㝿䠈௨ୗ䛾㛵ಀ䛜‶䛯䛥䜜䜛䠊

OLo + Lo P = HLo + Lo P

(A-1)

䛣䛾᥋⥆㡿ᇦ䛾ᑟධ䛻䜘䜚䠈༙↓㝈⤖ᬗ䛻ᑐ䛩䜛᭷㝈䛾 Bragg 㡿ᇦ䛿᫂░䛻ㄝ᫂䛥䜜䜛䠊

A-2. ㏱㐣䞉཯ᑕᵓ㐀㻌X ⥺䛾ືຊᏛⓗᅇᢡ䛿᱁Ꮚ㠃䛸⤖ᬗ⾲㠃䛸䛾䝭䝇䝬䝑䝏ゅ䠈α䠈䛻䜘䛳䛶㏱㐣䠄Laue䠅䜿䞊䝇䛸཯ᑕ䠄Bragg䠅䜿䞊䝇䛸䛻኱ู䛥䜜䜛䠊䛭䜜䛮䜜䛾⤖ᬗᵓ㐀䜢 Fig. A-3 䛻♧䛩䠊ᒅᢡἼ䠈ᅇᢡἼ䠈䛭䛧䛶ᖸ΅䛻䜘䜚⏕䛨䜛Ἴືሙ䛾 Poynting 䝧䜽䝖䝹䜢 so䠈sh䠈s 䛸⨨䛟䠊䛣䛣䛷䠈s 䛾᪉ྥ䛿᱁Ꮚ㠃䛸ᖹ⾜䛻䛺䜛䠊䛭䜜䛮䜜䛾 Poyinting 䝧䜽䝖䝹䛸䠈⤖ᬗෆ㒊䛻ྥ䛔䛯⾲㠃䛾ἲ⥺䝧䜽䝖䝹 n 䛸䛾ゅᗘ䜢 ψo䠈ψh䠈ψs௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

130

Fig. A-3.

Conceptual diagrams of Laue-case (a) and Bragg-case diffraction.

䛸⨨䛟䛝䠈௨ୗ䛾䜘䛖䛻ᐃ⩏䛩䜛䠊ψ o = ( n, s o )ψ h = ( n, s h )(A-2)

ψ n = −π / 2 + αψ o = ψ n + θB
ψ o = ψ n − θB(A-3)

ψ n = ( n, s )䛭䜜䛮䜜௨ୗ䛾㛵ಀ䜢‶䛯䛩䠊䝭䝇䝬䝑䝏ゅᗘ䛜−π/4 < α < π/4 䛾᫬ Bragg 䜿䞊䝇䛸䠈π/4 < α < 3π/4 䛾᫬ Laue 䜿䞊䝇䛸࿧䜀䜜䜛䠊䛣䜜䜙䛾㛵ಀᘧ䛿䠈Bragg 䜿䞊䝇䛻䛚䛔䛶䛿ᅇᢡἼ䛜ධᑕ㠃䛛䜙⤖ᬗእ㒊䜈䛸ఏ᧛䛧䛶䛔䛝䠈Laue 䜿䞊䝇䛷䛿⤖ᬗෆ㒊䜈䛸ఏ᧛䛧䛶䛔䛟䛣䛸䜢ព࿡䛧䛶䛔䜛䠊ᚑ䛳䛶䠈䛭䜜䛮䜜཯ᑕ䠈㏱㐣䜿䞊䝇䛸࿧䜀䜜䜛஦䜒䛒䜛䠊䛣䛣䛷 γo = cosψo䠈γh = cosψh 䛸ᐃ⩏䛩䜛䛸䠈䛭䜜䛮䜜䛾ẚ䛷䛒䜛㠀ᑐ⛠ẚ䠈γ䠈䛿

γ =γ h cos (ψ n − θ B )=γ o cos (ψ n + θ B )䛸♧䛥䜜䜛䠊γ = ±1 䛾ሙྜ䠈ṇ㈇䛭䜜䛮䜜ᑐ⛠ Laue䠈ᑐ⛠ Bragg 䜿䞊䝇䛸࿧䜀䜜䜛䠊

(A-4)

A-2㻌 ㏱㐣䞉཯ᑕᵓ㐀

Fig. A-4.

131

Wavefields in a Bragg-case crystal. (a) Reciprocal space and (b) real space.

Bragg 䜿䞊䝇⤖ᬗ୰䛷⏕䛨䜛Ἴືሙ䛻㛵䛧䛶⪃䛘䜛䠊Lorentz point ㏆ഐ䛾ศᩓ㠃䜢 Fig. A-4a 䛻♧䛩䠊ศᩓ⌫䛾༙ᚄ䛾┦ᑐᕪ ( K − k ) k 䠈䛿ᴟ䜑䛶ᑠ䛥䛔Ⅽ䠈ྛ䚻䛾ศᩓ㠃䛿᥋⥺䛸䛧䛶㏆ఝฟ᮶
䜛䠊s’j 䛸 s”j 䛿䛭䜜䛮䜜 O Ἴ䛸 H Ἴ䛾 Poynting 䝧䜽䝖䝹䜢♧䛧䛶䛚䜚䠈᥋⥆㡿ᇦ䛻ᑐ䛧䛶ᆶ┤䛸䛺䜛䠊ୗ௜䛝ᩥᏐ j = 1 or 2 䛿 Lo 䛻ᑐ䛧䛶ୖഃ䛾᥋⥆㡿ᇦ䠈ୗഃ䛾᥋⥆㡿ᇦ䜢♧䛧䛶䛚䜚䠈䛭䜜䛮䜜䝤䝷䞁䝏 1 or 2 䛸ᐃ⩏䛩䜛䠊ධᑕἼ䛾Ἴᩘ䝧䜽䝖䝹䛜 OMo 䛷䛒䜛᫬䠈tiepoint P 䛿 Mo 䜢㏻㐣䛩䜛ἲ⥺䝧䜽䝖䝹 n 䛸᥋⥆㡿ᇦ䛸䛾஺Ⅼ䛻఩⨨䛩䜛䠊ᚑ䛳䛶䠈OPj 䛸 HPj 䛿⤖ᬗ୰䛷䛾 O Ἴ䠈H Ἴ䛾Ἴᩘ䝧䜽䝖䝹䛻┦ᙜ䛩䜛䠊Bragg 䜿䞊䝇䛻䛚䛔䛶䛿䠈ἲ⥺䝧䜽䝖䝹䛿䛔䛪䜜䛛䛾䝤䝷䞁䝏䛸 2 Ⅼ䛷஺䜟䜛䠊TO 䛻㏆䛔᪉䜢 P’j䠈TH 䛻㏆䛔᪉䜢 P”j 䛸⾲グ䛧䛶䛚䜚䠈䛭䜜䛮䜜ධᑕ㠃䛛䜙䛾Ἴືሙ䛸䛾┦஫స⏝䠈⿬㠃ഃ䛛䜙䛾Ἴືሙ䛸䛾┦஫స⏝䜢♧䛧䛶䛔䜛䠄Fig. A-4b䠅䠊༙↓㝈⤖ᬗ䛻ᑐ䛧䛶䛿⿬㠃䛛䜙䛾Ἴືሙ䛿Ꮡᅾ䛧䛺䛔Ⅽ䠈P’j 䛾䜏䜢⪃៖䛩䜛䛰䛡䛷䜘䛔䠊Mo 䛜 Fig. A-4a ෆ䛾㉥䛷♧䛧䛯㡿ᇦ䛻఩⨨䛩䜛ሙྜ䠈ἲ⥺䝧䜽䝖䝹䛿䛔䛪䜜䛾䝤䝷䞁䝏䛸䜒஺䜟௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

132䜙䛺䛔䠊䛣䜜䛿㙾㠃཯ᑕ䛷ゝ䛖䛸䛣䜝䛾඲཯ᑕ㡿ᇦ䛻┦ᙜ䛧䛶䛚䜚䠈䛣䛾ゅᗘ⠊ᅖ䛻䛚䛔䛶䛿඲཯ᑕ䛜⏕䛨䠈᭷㝈䛾 Bragg 㡿ᇦ䜢᫂░䛻♧䛧䛶䛔䜛䠊྾཰䛾↓䛔⤖ᬗ䛻ᑐ䛧䛶䠈཯ᑕ⋡᭤⥺䛿 Darwin䝝䝑䝖䛸䛧䛶᭷ྡ䛺䝅䝹䜽䝝䝑䝖ᙧ≧䜢䛧䛶䛔䜛䠄Fig. A-5䠅䠊䛣䛣䛷 Laue 䜿䞊䝇䛻䛚䛔䛶䛿䠈ἲ⥺䝧䜽䝖䝹䛿ᖖ䛻୧䝤䝷䞁䝏䛸஺ᕪ䛩䜛Ⅽ䠈Bragg 䜿䞊䝇䛾䜘䛖䛺඲཯ᑕ䛿⏕䛨䛺䛔䠊䜎䛯䠈⤖ᬗ୰䛾Ἴືሙ䛿ᵝ䚻䛺Ἴ䛸䛾ᖸ΅䜢ཷ䛡䜛䛯䜑䠈ᅇᢡ䠈ᒅᢡἼ䛾ᙉᗘ᭤⥺䛿䝬䝹䝏䝢䞊䜽䜢♧䛩䠊ᮏ㡯䛷䛿ධᑕゅᗘ䛻ᑐ䛧䛶䛾䜏㆟ㄽ䛧䛶䛔䜛䛜䠈X ⥺䛾䜶䝛䝹䜼䞊䛻ᑐ䛧䛶䜒ྠᵝ䛷䛒䜛䠊✵㛫䛸᫬㛫䛿䛭䜜䛮
䜜ゅᗘ䠈࿘Ἴᩘ䠄䜶䝛䝹䜼䞊䠅䛸䝣䞊䝸䜶㛵ಀ䛷⤖䜀䜜䜛Ⅽ䠈Laue 䜿䞊䝇䛾 X ⥺ᅇᢡ䛻䜘䛳䛶」㞧䛺
᫬✵㛫䝥䝻䝣䜯䜲䝹䛾஘䜜䛜䜒䛯䜙䛥䜜䜛 [A7]䠊

A-3. ༙↓㝈⤖ᬗ䛻ᑐ䛩䜛 Darwin 䜹䞊䝤䛾ィ⟬ືຊᏛ⌮ㄽ䛾ゎ䛿 deviation parameter䠈η䠈䛾ᑟධ䛻䜘䜚ୖᡭ䛟グ㏙䛷䛝䜛䠊η 䛿௨ୗ䛾䜘䛖䛻♧
䛥䜜䜛䠊

η=

∆θ sin 2θ B + χ o (1 − γ ) 2
C γ χhχh=(∆θ − ∆θ os )
ω os 2

(A-5)

䛣䛣䛷䠈

∆θos =ωos =ΛB =χ (1 − γ )La I o=− ok2sin 2θ B

2C γ χ h χ hsin 2θ B

λ γo γhC χh χh==2λ γ hΛ B sin 2θ B

(A-6)πV γ o γ hre λC Fh Fh䛷䛒䜛䠊Ⅼ Io 䛿 Lo 䜢㏻㐣䛩䜛ἲ⥺䝧䜽䝖䝹䛸 T’O 䛸䛾஺Ⅼ䠈χ0 䛿⥺ᙧ㟁Ẽឤཷ⋡䛷䛒䜚䠈χ o ≈ 2 ( n − 1)

(A-7)

A-3㻌 ༙↓㝈⤖ᬗ䛻ᑐ䛩䜛 㻰㼍㼞㼣㼕㼚 䜹䞊䝤䛾ィ⟬133

䛷୚䛘䜙䜜䜛䠊C 䛿೫ගᅉᏊ䛷䛒䜚䠈σ ೫ග䠄㟁ሙ䝧䜽䝖䝹䛜᱁Ꮚ㠃䛸ᖹ⾜䠅䛻ᑐ䛧䛶䛿 1䠈π ೫ග䠄㟁ሙ䝧䜽䝖䝹䛜᱁Ꮚ㠃䛸ᆶ┤䠅䛻ᑐ䛧䛶䛿 cos2θB 䛜㐺⏝䛥䜜䜛䠊re = 2.817940 × 10−15 m 䛿ྂ඾㟁Ꮚ༙ᚄ䠈V 䛿༢఩᱁Ꮚ䛾య✚䠈䛭䛧䛶 ∆θ 䛿ධᑕゅ θ 䛸 Bragg ゅ θB 䛸䛾ᕪ䠄 ∆θ = θ − θ B 䠅䛷䛒䜛䠊χh 䛿ឤཷ⋡ χ 䛾䝣䞊䝸䜶⣭ᩘ䛷䛒䜚䠈௨ୗ䛾䜘䛖䛻⾲䛥䜜䜛䠊χ = ∑ χ h exp(2πih ⋅ r )

(A-8)

h

䜎䛯䠈Fh 䛿⤖ᬗᵓ㐀ᅉᏊ䛾䝣䞊䝸䜶⣭ᩘ䛷䛒䜚䠈Fh =∑ f exp(− M − 2πih ⋅ r )
j

j

j

(A-9)

j

䛷୚䛘䜙䜜䜛䠊䛣䛣䛷䠈fj 䛿༢఩᱁Ꮚෆ䛾ཎᏊ j 䛾ཎᏊᩓ஘ᅉᏊ䠈Mj 䛿⇕᣺ື䛻䜘䜛ཎᏊ఩⨨䛾୙☜ᐃᛶ䛾ᙳ㡪䜢⪃៖䛩䜛Ⅽ䛾 Debye–Waller ᅉᏊ䛷䛒䜚䠈ᐇຠⓗ䛺⤖ᬗᵓ㐀ᅉᏊ䛾పୗ䜢䜒䛯䜙䛩䠊ືຊᏛⓗ䛺ᅇᢡ䛻䛚䛡䜛✀䚻䛾≉ᛶ䛿ᘧ䠄A-6䠅䛾䝟䝷䝯䞊䝍䛷୚䛘䜙䜜䜛䠊∆θos 䛿 Darwin 䜹䞊䝤୰ᚰゅ䛸 θB 䛸䛾೫ᕪ䛷䛒䜚䠈2ωos 䛾ᐇ㒊䛿 Darwin ᖜ䛻䠈ΛB 䛿ᾘ⾶㊥㞳䠄O Ἴ䛾᣺ᖜ䛜 1/e 䛻䛺䜛䜎䛷䛾㊥㞳䠅䛻┦ᙜ䛩䜛䠊Bragg 䜿䞊䝇䛻䛚䛔䛶䠈γ 䛿ᖖ䛻㈇䛸䛺䜛䛯䜑䠈∆θos 䛜 0 䛸䛺䜛䛣䛸䛿䛺䛟䠈㐠ືᏛⓗ䛺 Bragg ゅ䜘䜚䜒㧗ゅഃ䛻 Darwin 䜹䞊䝤䛾୰ᚰ䛜఩⨨䛩䜛䛣䛸䛻䛺䜛䠊䛣䜜䛜 Roseker 䜙䛾ศ๭䞉㐜ᘏගᏛ⣔ [A8] 䛻䛚䛔䛶ၥ㢟䛸䛧䛶ᣲ䛢䜙䜜䛯䠈Laue ⤖ᬗ䛸 Bragg ⤖ᬗ䛸䛾䝭䝇䝬䝑䝏ゅᗘ䛾ཎᅉ䛷䛒䜛䠊䛣䛣䛷 Darwin ᖜ䛿㠀ᑐ⛠ẚ γ 䛻౫Ꮡ䛩䜛䛣䛸䛻ὀ┠䛩䜛䠊䛣䛾䛣䛸䛿 Fig. A-4a 䜘䜚どぬⓗ䛻⌮ゎ䛷䛝䜛䠊㠀ᑐ⛠ẚ䛾ኚ໬䛿ἲ⥺䝧䜽䝖䝹䛾ゅᗘኚ໬䛻┦ᙜ䛧䛶䛚䜚䠈㉥䛸㟷䛷♧䛧䛯㡿ᇦ䛾ᖜ䛜ኚ໬䛩䜛䛣䛸䛜ᐜ᫆䛻ぢ䛶ྲྀ䜜䜛䠊㠀ᑐ⛠䛺ᅇᢡ䛾ሙྜ䠈Darwin ᖜ䛸 θB 䛛䜙䛾೫ᕪ䛜ධᑕἼືሙ䛸ᅇᢡἼືሙ䛸䛷䛭䜜䛮䜜␗䛺䜚䠈௨ୗ䛾䜘䛖䛻♧䛥䜜䜛䠊ωhs =2re λ 2
1C
π V sin 2θ B γ

Fh Fhre λ 2 Fo  1 ∆θ hs = −
1 − 
2π V sin 2θ B  γ (A-10)

䛣䜜䛿⤖ᬗ䛾㠀ᑐ⛠ẚ䜢ไᚚ䛩䜛䛣䛸䛷䠈ᅇᢡἼ䛾ᛶ㉁䜢኱䛝䛟ኚ໬䛥䛫䜛䛣䛸䛜ฟ᮶䜛஦䜢♧䛧䛶䛔䜛䠊㠀ᑐ⛠ᅇᢡ䜢⏝䛔䠈ᖹ⾜ග䛾⏕ᡂ [A9] 䜔㉸㧗ศゎ⬟䛺䝰䝜䜽䝻䝯䞊䝍䛾ᵓ⠏ [A10] ➼䛜௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

134

ᐇ⌧䛥䜜䛶䛝䛯䠊
䛣䜜䜙䛾䝟䝷䝯䞊䝍䜢⏝䛔䛶䠈༙↓㝈⤖ᬗ䛻ᑐ䛩䜛 Darwin 䜹䞊䝤䛿I h = η − S (η r ) η 2 − 1

2(A-11)

䛸ィ⟬䛥䜜䜛䠊䛣䛣䛷䠈S(ηr) 䛿 η 䛾ᐇ㒊䛾➢ྕ䛻┦ᙜ䛩䜛䠊඲䛶䛾䝟䝷䝯䞊䝍䜢ᐇᩘ䛸䛧䛶ィ⟬䛧䛯ሙྜ䠈྾཰䛾↓䛔፹㉁䛻ᑐ䛩䜛 Darwin 䜹䞊䝤䛜ᑟฟ䛥䜜䜛䠊䛭䛾㝿䠈−1 ≤ η ≤ +1 䛾⠊ᅖ䛷䛿඲཯ᑕ䛜⏕䛨䠈Ih = 1 䛸䛺䜚䠈䝅䝹䜽䝝䝑䝖ᙧ≧䜢ྲྀ䜛䠄Fig. A-5䠅䠊䜎䛯䠈྾཰䜢⪃៖䛩䜛ሙྜ䠈඲䛶䛾䝟䝷䝯䞊䝍䛿」⣲ᩘ䛸䛺䜛䠊ᚑ䛳䛶༢⣧䛻ᘧ䠄A-11䠅䜢ィ⟬䛩䜛䛣䛸䛷 Darwin 䜹䞊䝤䜢ᑟฟྍ⬟䛷䛒䜛䠊᣺ᖜ཯ᑕ⋡ ξ 䛿⤯ᑐ್䛾ෆ㒊䛾䜏䜢ィ⟬䛩䜛䛣䛸䛷ᑟ䛝ฟ䛥䜜䜛䠊䛣䛣䛷䠈྾཰䜢⪃៖䛧䛯㝿䛾
Darwin 䜹䞊䝤䛜㠀ᑐ⛠䛺ᙧ≧䛸䛺䛳䛶䛔䜛஦䛻ὀ┠䛩䜛䠊䛣䜜䛿␗ᖖ྾཰䠄䜒䛧䛟䛿␗ᖖ㏱㐣䠅
[A11], [A12] 䛾ຠᯝ䛷䛒䜚䠈⤖ᬗෆ䛷⏕䛨䛯ᐃᅾἼ䛾⭡䛸⠇䛜᱁Ꮚ㠃䠄ཎᏊ㓄⨨䠅䛻ᑐ䛧䛶䛹䛣䛻఩⨨䛧䛶䛔䜛䛛䛻౫Ꮡ䛧䛶䛔䜛䠊P 䛜䝤䝷䞁䝏 1 䛻఩⨨䛩䜛䠈ηr 䛜㈇䛾ሙྜ䠈᱁Ꮚ㠃ୖ䛻䛿ᐃᅾἼ䛾⠇䛜Ꮡᅾ䛩䜛䠊ᚑ䛳䛶Ἴືሙ䛸፹㉁䛸䛾┦஫స⏝䛜ᙅ䛟䠈྾཰ಀᩘ䛜㏻ᖖ䜘䜚䜒పୗ䛩䜛䠊୍᪉䛷 ηr䛜ṇ䛾ሙྜ䠈P 䛿䝤䝷䞁䝏 2 䛻఩⨨䛧䠈᱁Ꮚ㠃ୖ䛻䛿ᐃᅾἼ䛾⭡䛜Ꮡᅾ䛩䜛䠊ᚑ䛳䛶྾཰ಀᩘ䛜㏻
ᖖ䜘䜚䜒኱䛝䛟䛺䜚䠈䛭䛾⤖ᯝ཯ᑕ⋡䛾పୗ䛜⏕䛨䜛䠊

Fig. A-5.

Darwin curve with a semi-infinite Si(220) crystal at 10 keV. Solid and dashedcurves were calculated with absorbing and non-absorbing crystals.

A-4㻌 ⷧ䛔⤖ᬗ䛻ᑐ䛩䜛 Darwin 䜹䞊䝤䛾ィ⟬

135

A-4. ⷧ䛔⤖ᬗ䛻ᑐ䛩䜛 Darwin 䜹䞊䝤䛾ィ⟬๓㡯䛷䛿⿬㠃䛛䜙䛾Ἴືሙ䜢⪃៖䛧䛺䛔䠈༙↓㝈⤖ᬗ䛻ᑐ䛧䛶ྲྀ䜚ᢅ䛳䛶䛝䛯䠊୍⯡ⓗ䛻䛿⤖ᬗ䛾ཌ䜏 t 䛜 ΛB 䛾 10 ಸ௨ୖ኱䛝䛡䜜䜀䠈༙↓㝈⤖ᬗ䛸䛧䛶ྲྀ䜚ᢅ䛳䛶䜒ၥ㢟䛺䛔䛸䛥䜜䛶䛔䜛䠊ᮏ㡯䛷䛿ⷧ䛔⤖ᬗ䛻㛵䛧䛶᳨ウ䛩䜛䠊䛣䛣䛷ⷧ䛔⤖ᬗ䛸䛿䠈t ~ ΛB 䛸䛺䜛䜘䛖䛺⤖ᬗ䛷䛒䜚䠈⿬㠃䛛䜙䛾Ἴືሙ䜢⪃៖䛩䜛ᚲせ䛜䛒䜛䠊ධᑕ㠃䠈⿬㠃䛾ቃ⏺᮲௳䛿௨ୗ䛾䜘䛖䛻᭩䛡䜛䠊
1. ධᑕ㠃䠖

Do ' + Do " = Do( a )(A-12)

Dh ' + Dh " = Dh( a )2. ⿬㠃䠖

Do ' exp ( −2π iK o' ⋅ r ) + Do " exp ( −2π iK o" ⋅ r ) = Do( d ) exp ( −2π iK o(d) ⋅ r )Dh ' exp ( −2π iK h' ⋅ r ) + Dh " exp ( −2π iK h" ⋅ r ) = 0(A-13)(d)䛣䛣䛷䠈 Do(d) = D (d)o exp( −2πiK o ⋅ r ) 䛿⿬㠃䛛䜙䛾Ἴືሙ䜢♧䛩䠊

Fig. A-4a 䜘䜚䠈Ko’ = Ko(a) + MP’j䠈Ko” = Ko(a) + MP”j䠈Kh’ = Kh(a) + MP’j䠈Kh” = Kh(a) + MP”j 䛜‶䛯䛥䜜䜛ᚲせ䛜䛒䜛䠊䛣䜜䜙䛾㛵ಀ䛛䜙, ᘧ䠄A-13䠅䛿ḟ䛾䜘䛖䛻᭩䛝᥮䛘䜙䜜䜛䠊

(

)

(

)

Do ' exp −2π iMP ' j t + Do " exp −2π iMP " j t = Do( d )

(

)

(

)

Dh ' exp −2π iMP ' j t + Dh " exp −2π iMP " j t = 0(A-14)

䛣䛣䛷ḟ䛾䜘䛖䛻⨨䛟䠊

ρ 2 exp(2iω ) = η 2 − 1(A-15)

ᘧ䠄A-15䠅䛿 ω 䛻㛵䛧䛶 2 䛴䛾ゎ䠈ω’䛸 ω” = ω’ + π ᣢ䛴䠊䛣䜜䛻䜘䜚䠈 MP ' j 䛸 MP" j 䛿ḟ䛾䜘䛖䛻グ㏙䛷䛝䜛䠊௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

136

k χo
η
ρ
−
−
exp i ( β + ω ') 
2γ o 2Λ B 2 Λ B

MP ' j =(A-16)kχηρMP " j = o −−exp i ( β + ω ") 
2γ o 2Λ B 2 Λ B

ᘧ䠄A-12䠅䛸ᘧ䠄A-13䠅䛾ቃ⏺᮲௳䛿᣺ᖜ཯ᑕ⋡ ξj䠄=Dhj/Doj䠅䜢⏝䛔䜛䛣䛸䛷ゎ䛟䛣䛸䛜ྍ⬟䛷䛒䜚䠈ධᑕ㠃䛻䛚䛡䜛ᅇᢡἼ Dh(a)䛸⿬㠃䛻䛚䛡䜛ᒅᢡἼ Do(d)䛜ḟ䛾䜘䛖䛻ᚓ䜙䜜䜛䠊Dh( a ) =Do( d ) =

(

(
(

)
)

)

(ξ ' − ξ " ) exp ( −2π i  MP ' + MP "  t )
j

j

(

)

j

j

(

ξ ' j exp −2π iMP ' j t − ξ " j exp −2π iMP " j t

(a)
h

D(a)
= γ h( a )
Do

(d )
o

D(d )
= o( a )
Do

I

)


 D(a)oξ ' j exp −2π iMP ' j t − ξ " j exp −2π iMP " j t᭱⤊ⓗ䛻䠈ε1, 2 = exp(±πit/Λ) 䛸 Λ = Λ BI(ξ ' j ξ " j exp −2π iMP ' j t − exp −2π iMP " j t 

2

2

=

)

(A-17)Do( a )

η 2 − 1 䛸䜢⏝䛔䛶䠈཯ᑕ⋡䠈㏱㐣⋡䛿ḟ䛾䜘䛖䛻ᚓ䜙䜜䜛䠊ε1 − ε 2χ= hχh η ε − ε + η 2 − 1 ε + ε 2( 1 2)( 1 2)
2

4 η 2 − 1 exp − ( µ0 2 )(1 γ 0 + 1 γ h ) t η ( ε1 − ε 2 ) + η 2 − 1 ( ε1 + ε 2 )(A-18)

2

ᘧ䠄A-18䠅䛿 Fig. A-6 䛾䜘䛖䛻䠈ゅᗘ⠊ᅖ|η| > 1 䛻䛚䛔䛶 Darwin 䜹䞊䝤䛜᣺ື䛩䜛䛣䛸䜢♧䛧䛶䛔䜛䠊䛣䜜䛿Ἴືሙ D(a)䛸 D(d)䛸䛜ᖸ΅䛧ྜ䛖Ⅽ䛷䛒䜚䠈Pendellösung 䝣䝸䞁䝆䛸࿧䜀䜜䜛 [A13]䠊䛣䛾
䝣䝸䞁䝆䛾࿘ᮇ䜢⢭ᐦ䛻ᐃ䛩䜛䛣䛸䛷䠈⤖ᬗ䛾ཌ䜏䜢ᑟฟྍ⬟䛷䛒䜛䠊

Pendellösung 䝣䝸䞁䝆䛿ᒅᢡἼഃ䛻䜒☜ㄆ䛷䛝䜛䠊ᒅᢡἼ䛾࿘Ἴᩘ䛻ᑐ䛩䜛」⣲᣺ᖜ཯ᑕ⋡䜢䝣䞊䝸䜶ኚ᥮䛧䛯㝿䠈᪂䛯䛺䝢䞊䜽䛜䜟䛪䛛䛺᫬㛫㐜ᘏ䜢ᣢ䛳䛶⏕䛨䜛䠊䛣䛾஦䛛䜙䠈༑ศᗈ䛔䝞䞁䝗ᖜ䜢᭷䛩䜛 X ⥺䜢ⷧ䛔⤖ᬗ䛻ධᑕ䛧䛯ሙྜ䠈༢Ⰽ໬䛥䜜䛯๓᪉ᅇᢡἼ䛜༢䛺䜛㏱㐣ග䛛䜙㐜ᘏ䛧䛶⏕䛨䜛஦䛜ண䛥䜜䠈䝉䝹䝣䝅䞊䝕䜱䞁䜾 [A14] 䜈䛾㐺⏝䛜 Geloni 䜙䛻䜘䛳䛶ᥦ᱌䛥䜜䛯[A15]䠊

Lindberg 䛸 Shvyd’ko 䛻䜘䛳䛶ゎᯒⓗ䛻䜒ゎ䛛䜜 [A16]䠈LCLS 䛻䛚䛔䛶ⷧ䛔䝎䜲䝲䝰䞁䝗⤖ᬗ䜢⏝䛔䛯䝉䝹䝣䝅䞊䝕䜱䞁䜾䛜ᐇ⌧䛧䛯 [A17]䠊

A-5㻌 」⤖ᬗ㓄⨨䛸 DuMond ᅗ

Fig. A-6.

137

Darwin curves of Si(220) diffraction witha 10.2 µm (= 1.5ΛB) thick crystal at 10 keV.

A-5. 」⤖ᬗ㓄⨨䛸 DuMond ᅗ䛣䜜䜎䛷䛿༢Ⰽᖹ㠃Ἴ䛻ᑐ䛩䜛 1 䛴䛾⤖ᬗ䛻䜘䜛 X ⥺ᅇᢡ䜢ྲྀ䜚ᢅ䛳䛶䛝䛯䛜䠈ᐇ㝿䛻䛿ධᑕX ⥺䛿᭷㝈䛾䝞䞁䝗ᖜ䛸Ⓨᩓゅ䜢᭷䛧䛶䛚䜚䠈䝰䝜䜽䝻䝯䞊䝍䛸䛧䛶䠈ศ๭䞉㐜ᘏගᏛ⣔䛸ྠᵝ䛻䠈」

ᩘ䛾⤖ᬗ⣲Ꮚ䛜⏝䛔䜙䜜䜛䛣䛸䛜ከ䛔䠊ᮏ㡯䛷䛿䠈䛭䛾䜘䛖䛺」⤖ᬗ㓄⨨䛻䜘䜛ගᏛ⣔䛾≉ᛶ䜢ホ౯䛩䜛Ⅽ䛾᭷ຠ䛺ᡭἲ䜢⤂௓䛩䜛䠊」⤖ᬗ㓄⨨ගᏛ⣔䛾≉ᛶ䜢どぬⓗ䛻⌮ゎ䛩䜛Ⅽ䠈DuMond 䛿 Bragg 䛾ᘧ䠄A-1䠅䜢 θ-λ ✵㛫ୖ䛻⾲⌧䛧 [A18]䠄Fig. A-7䠅䠈䛣䛾䜘䛖䛺⾲グἲ䛿 DuMond ᅗ䛸࿧䜀䜜䜛䜘䛖䛻䛺䛳䛯䠊Bragg 䛾ᘧ䛿䛒䜛 d 䛻ᑐ䛧䛶 1 䛴䛾᭤⥺䜢୚䛘䜛䛜䠈๓㏙䛾㏻䜚䠈ᐇ㝿䛻䛿᭷㝈䛾ᖜ䜢᭷䛧䛶䛚䜚䠈Darwin 䜹䞊䝤䛾୰ᚰゅ䛿 θB 䜘䜚䜒㧗ゅഃ䛻᮶䜛䠄Fig. A-7b䠈c䠅䠊᭷㝈䛾䝞䞁䝗ᖜ䛸Ⓨᩓゅ䜢᭷䛩䜛 X ⥺䛾ゅᗘ䠈Ἴ㛗ศᕸ䜢⪃䛘䛯㝿䠈ᙉᗘ䛿༢⣧䛻✚ศ್䠈∫I(θ, λ)dθdλ䠈䛷⾲䛥䜜䜛䠊ᚑ䛳䛶 Bragg ᮲௳䜢‶䛯䛩㝿䠈ᅇᢡἼ䠈ᒅᢡἼ䛾ᙉᗘ䜒ྠᵝ䛻䠈I rf = ∫ I in (θ , λ ) R (δθ , δλ )dθ dλI tr = ∫ I in (θ , λ )T (δθ , δλ )dθ dλ(A-19)

௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

138

Fig. A-7.

(a) Bragg’s condition expressed with DuMond diagram. Magnified images forsymmetric (a) and asymmetric (b) cases. Ω represents the beam divergence.

䛸ᚓ䜙䜜䜛䠊䛣䛣䛷 Irf䠈Itr 䛿䛭䜜䛮䜜ᅇᢡἼ䠈ᒅᢡἼ䛾ᙉᗘ䠈R䠈T 䛿⤖ᬗ䛾཯ᑕ⋡ศᕸ䠈㏱㐣⋡ศᕸ䜢♧䛧䛶䛔䜛䠊δθ䠈δλ 䛿䛭䜜䛮䜜୰ᚰἼ㛗䛻ᑐ䛩䜛 Darwin 䜹䞊䝤䛾୰ᚰゅ䛛䜙䛾೫ᕪ䠈୰ᚰἼ㛗䛛䜙䛾೫ᕪ䜢♧䛧䛶䛔䜛䠊」⤖ᬗ⣔䜢⪃䛘䜛㝿䠈㐃⥆䛩䜛 2 䛴䛾⤖ᬗ䛜䛹䛾䜘䛖䛻㓄⨨䛥䜜䛶䛔䜛䛛䜢⪃៖䛩䜛ᚲせ䛜䛒
䜚䠈 (+, +) 㓄⨨䠄Fig. A-8a䠅䛸 (+, −) 㓄⨨䠄Fig. A-8b䠅䛸䛻኱ู䛥䜜䜛䠊䛭䜜䛮䜜䛾⤖ᬗ䛜 X ⥺䛾᪉ྥ䜢ྠ䛨᪉ྥ䛻ኚ໬䛥䛫䜛 (+, + ) 㓄⨨䛷䛿䠈➨ 1 ⤖ᬗ䛻ゅᗘ η = +φ 䛷ධᑕ䛥䜜䛯 X ⥺䛿➨ 2 ⤖ᬗ䛻䛚䛔䛶䛿 η = −φ 䛷ධᑕ䛥䜜䜛䠊ᚑ䛳䛶䠈➨ 2 ⤖ᬗ䛛䜙䛾ᅇᢡἼᙉᗘศᕸ䛿௨ୗ䛾䜘䛖䛻⾲䛥䜜䜛䠊

A-5㻌 」⤖ᬗ㓄⨨䛸 DuMond ᅗ

Fig. A-8.

139(a) (+, +) arrangement and (b) (+, −) arrangement 䠊 Uppers and lowers

represent crystal configurations and DuMond diagrams, respectively.

I rf(2) (θ , λ ) = I in (−θ , λ ) R (1) (−δθ , δλ ) R (2) (δθ , δλ )(A-20)

䛣䛾 (+, + ) 㓄⨨䛿䠈䝞䞁䝗ᖜ䠈Ⓨᩓゅ䛾ᗈ䛔ධᑕ X ⥺䛻ᑐ䛧䛶㧗䛔༢Ⰽ໬䠈ᖹ⾜໬ᛶ⬟䜢᭷䛧䛶䛔䜛䛣䛸䛜䜟䛛䜛䠊䛯䛰䛧䠈X ⥺䛾ග㍈䛜኱䛝䛟䛪䜜䜛Ⅽ䛻 2 ⤖ᬗ㓄⨨䛷䛿䛒䜎䜚ỗ⏝ⓗ䛷䛿䛺䛔䠊୍᪉䛷䠈 (+, −) 㓄⨨䛷䛿ゅᗘ䛾㏫㌿䛜⏕䛨䛪䠈ᅇᢡἼ䛾ᙉᗘศᕸ䛿I rf(2) (θ , λ ) = I in (θ , λ ) R (1) (δθ , δλ ) R (2) (δθ , δλ )(A-21)

䛸⾲䛥䜜䜛䠊ᖹ⾜໬䛾ᛶ⬟䛿᭷䛧䛶䛔䛺䛔䜒䛾䛾䠈ྠ୍䛾᱁Ꮚ㠃䜢⏝䛔䜛䛣䛸䛷ᅇᢡἼ䛾᪉ྥ䛿ඖ䚻䛾ග㍈䛸ᖹ⾜䛻ᡠ䛩䛣䛸䛜ྍ⬟䛷䛒䜛䠊➨ 3 ୡ௦ᨺᑕග䜔 XFEL 䛾Ⓨᩓゅ䛿༑ศᑠ䛥䛔Ⅽ䠈

(+, −) 㓄⨨䛻䛚䛔䛶䜒 (+, +) 㓄⨨䛸ྠ➼䛾༢Ⰽ໬ᛶ⬟䛜ᮇᚅ䛥䜜䠈ỗ⏝ⓗ䛺䝰䝜䜽䝻䝯䞊䝍䛸䛧䛶ᗈ䛟⏝䛔䜙䜜䛶䛔䜛 [A19]䠊䜎䛯䠈ศᩓ䛾ᙳ㡪䜢㝖እฟ᮶䜛䛣䛸䛛䜙䠈⤖ᬗᛶホ౯䛻䜒䜘䛟⏝䛔䜙䜜䜛䠊䜘䜚ከ䛟䛾⤖ᬗ䜢⏝䛔䜛ගᏛ⣔䛻䛚䛔䛶䜒ྠᵝ䛻⾲⌧䛥䜜䜛䠊 (+, + ) 㓄⨨䛷䛾ゅᗘ䛾㏫㌿䛿䠈ゎᯒୖ䛹䛱䜙䛾⤖ᬗ䛻ᑐ䛧䛶⾜䛳䛶䜒ၥ㢟䛺䛔䛜䠈ᮏㄽᩥ䛷䛿ᘧ䠄A-20䠅䛾䜘䛖䛻ගᏛ⣔䛾᭱ᚋ䛾⤖ᬗ䜢ᇶ‽䛻Ỵᐃ䛧䛶䛔䜛䠊௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

140

A-6. ⤖ᬗᛶホ౯䛾䛯䜑䛾ᐇ㦂㓄⨨㻌ᮏ⠇䛻䛚䛔䛶䠈ᐇ㝿䛻⤖ᬗᛶホ౯䛻౑⏝䛧䛯 2 䛴䛾䝉䝑䝖䜰䝑䝥䠈䝃䞁䝥䝹⤖ᬗ䛸ྠ୍ᅇᢡ㠃䜢᭷䛩䜛䝁䝸䝯䞊䝍⤖ᬗ䜢⏝䛔䛯 (+, −) ᖹ⾜㓄⨨䛸䠈 (+, −, −, + ) 㓄⨨䛾 Si(444) 䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䜢䝰䝜䜽䝻䝯䞊䝍䛸䛧䛶౑⏝䛧䛯䝉䝑䝖䜰䝑䝥䛻㛵䛧䛶䠈䛭䜜䛮䜜䛾┠ⓗ䠈≉ᚩ䜢♧䛩䠊(+, −) ᖹ⾜㓄⨨䛾䝉䝑䝖䜰䝑䝥䜢 Fig. A-9 䛻♧䛩䠊ᮏ䝉䝑䝖䜰䝑䝥䛻䛚䛔䛶䠈X ⥺䛿䝃䞁䝥䝹┤๓䛻㓄⨨䛥䜜䛯䝁䝸䝯䞊䝍⤖ᬗ䛻䜘䛳䛶༢Ⰽ໬䛥䜜䠈䝃䞁䝥䝹⤖ᬗ䜈䛸↷ᑕ䛥䜜䜛䠊䛭䛧䛶䝃䞁䝥䝹⤖ᬗ䛛䜙䛾཯ᑕ X ⥺䝥䝻䝣䜯䜲䝹䜢⏝䛔䛯ホ౯䠄䝖䝫䜾䝷䝣䜱䞊䠅䜔䠈䝃䞁䝥䝹⤖ᬗ䛾ᅇ㌿ゅ䛻ᑐ䛩䜛཯ᑕᙉᗘ᭤⥺䠈㏱㐣ᙉᗘ᭤⥺䜢ྲྀᚓ䛩䜛䝻䝑䜻䞁䜾䜹䞊䝤ホ౯䜢⾜䛖䠊䛣䛣䛷䠈ᐃ䛥䜜䜛཯ᑕ⋡䠈

㏱㐣⋡䛿䠈௨ୗ䛻♧䛩䜘䛖䛻䠈ධᑕග䛾ゅᗘ䞉䝇䝨䜽䝖䝹ศᕸ䛸䝃䞁䝥䝹⤖ᬗ䛾཯ᑕ⋡䠈㏱㐣⋡ศᕸ䛸䛾ゅᗘ᪉ྥ䛾䝁䞁䝪䝸䝳䞊䝅䝵䞁䛸䛺䜛䠊I m (θ ) =∫∫ I (ϕ , λ ) R (ϕ − θ , λ )dϕ d λ∫∫ I (ϕ , λ )dϕ d λins(A-21)

in䛣䛣䛷䠈Im 䛿ᐃ䛥䜜䜛䝻䝑䜻䞁䜾䜹䞊䝤䠈Iin 䛿ධᑕ X ⥺䛾ゅᗘ䞉䝇䝨䜽䝖䝹ศᕸ䠈Rs 䛿䝃䞁䝥䝹⤖ᬗ䛾 Darwin 䜹䞊䝤䛷䛒䜛䠊๓⠇䛷㏙䜉䛯㏻䜚䠈ศᩓ䠄䝞䞁䝗ᖜ䠅䛾ᙳ㡪䜢ᢚไ䛧䛯ホ౯䛜ྍ⬟䛷䛒䜚䠈䝉䝑䝖䜰䝑䝥䛾ᐜ᫆ᛶ䛛䜙ᗈ䛟⤖ᬗᛶホ౯䛻⏝䛔䜙䜜䛶䛔䜛䠊(+, −, −, + ) 㓄⨨䛾 Si(444) 䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䝰䝜䜽䝻䝯䞊䝍䜢⏝䛔䛯㝿䛾䝉䝑䝖䜰䝑䝥䜢 Fig. A10 䛻♧䛩䠊Si(444) 䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䝰䝜䜽䝻䝯䞊䝍䜢⏝䛔䜛䛣䛸䛷䠈༢Ⰽᛶ䛾㧗䛔䝥䝻䞊䝤 X ⥺䛜ᚓ䜙䜜䜛䠊ᐃ䛥䜜䜛䝻䝑䜻䞁䜾䜹䞊䝤䛿ᘧ (A-21) 䛾䜘䛖䛻䠈䝁䞁䝪䝸䝳䞊䝅䝵䞁䛷⾲䛥䜜䜛Ⅽ䠈༢Ⰽᛶ䛾㧗䛔䝥䝻䞊䝤ග䜢⏝䛔䜛䛣䛸䛷䠈䜘䜚ᅛ᭷䛺 Darwin 䜹䞊䝤䛻㏆䛔཯ᑕ⋡䠈㏱㐣⋡᭤⥺䛜ᐃྍ⬟䛷䛒䜛䠊ᚑ䛳䛶䠈ᴟⷧ⤖ᬗ䛾 Darwin 䜹䞊䝤䛻⌧䜜䜛 Pendellösung 䝣䝸䞁䝆䛾ศゎ䜒ྍ⬟䛸䛺䜚䠈⤖ᬗཌ䜏䛾⤯ᑐᐃ䛜ᐇ⌧䛥䜜䜛䠊

䛭䜜䛮䜜䛾䝉䝑䝖䜰䝑䝥䛻䛚䛔䛶ᚓ䜙䜜䜛䝥䝻䞊䝤 X ⥺䛾 DuMond ᅗ䜢 Fig. A-11a䠈b 䛻♧䛩䠊
䜎䛯䠈10 µm ཌ䛾 Si(440) ⤖ᬗ䜢ᐃ䛧䛯㝿䛻ᚓ䜙䜜䜛䝻䝑䜻䞁䜾䜹䞊䝤䜢 Fig. A-11d 䛻♧䛩䠊䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䝰䝜䜽䝻䝯䞊䝍䜢฼⏝䛧䛯㝿䠈Pendellösung 䝣䝸䞁䝆䛜᫂░䛻ศゎ䛥䜜䛶䛔䜛䛣䛸䛜䜟
䛛䜛䠊Darwin 䜹䞊䝤䛾ศゎ⬟ຊ䛸䛔䛖ព࿡䛷䛿䠈䝏䝱䝛䝹䜹䝑䝖⤖ᬗ䝰䝜䜽䝻䝯䞊䝍䛾฼⏝䛿㨩ຊⓗ䛷䛒䜛䠊୍᪉䛷䠈᱁Ꮚ㠃䛾ഴᩳศᕸ䜢

ᐃ䛩䜛Ⅽ䠈䛒䜙䜖䜛ゅᗘ䛻䛚䛡䜛䝖䝫䜾䝷䝣䜢ྲྀᚓ䛧䠈䝢䜽䝉䝹༢఩䛾䝻䝑䜻䞁䜾䜹䞊䝤䜢ゎᯒ䛩䜛ᡭἲ䛜䛒䜛䠊䛣䛾ᡭἲ䛻䛚䛔䛶䛿䠈⣽䛛䛺ᵓ㐀䜢ศゎ䛩䜛䜘䜚

A-6㻌 ⤖ᬗᛶホ౯䛾䛯䜑䛾ᐇ㦂㓄⨨

Fig. A-9.

141(+, −) parallel arrangement. ICs correspond to ion chambers.

Fig. A-10. Experimental setup with Si(444) channel-cut crystals.

䜒䠈䜘䜚䜺䜴䝅䜰䞁䛻㏆䛔䝻䝑䜻䞁䜾䜹䞊䝤䜢ྲྀᚓ䛩䜛䛣䛸䛜ᮃ䜎䛧䛟䠈 (+, −) ᖹ⾜㓄⨨䛾᪉䛜䜘䜚ṇ☜䛺ศᕸ䜢ᐃ䛩䜛䛣䛸䛜ྍ⬟䛷䛒䜛䠊䛭䛾௚䠈䝃䞁䝥䝹⤖ᬗ䛾๓ᚋ䛻䝁䝸䝯䞊䝍⤖ᬗ䛸䜰䝘䝷䜲䝄⤖ᬗ䜢㓄⨨䛧䛯 (+, −, +) 䛾୕⤖ᬗ㓄⨨➼䛜ṍ䜏䜔Ḟ㝗䛾ྍど໬䛻䛿Ⰻ䛔䛸䛥䜜䜛䛜䠈ᮏ◊✲䛷㆟ㄽ䛩䜉䛝䛿Ḟ㝗➼䛾ᒁᡤⓗ䛺ᵓ㐀䛷䛿䛺䛟䠈1 µrad ௨ୗ䛾᱁Ꮚ㠃䛾ഴᩳ䛷䛒䜛Ⅽ䠈๓㏙䛧䛯 (+, −) ᖹ⾜㓄⨨䛻䜘䜛䝖䝫䜾䝷䝣ゎᯒ䛜᭱䜒㐺䛧䛶䛔䜛䛸ゝ䛘䜛䠊௜㘓 A㻌 X ⥺ᅇᢡ䛾ືຊᏛ⌮ㄽ

142

Fig. A-11. Comparison of the two setups. DuMond diagrams of probe X-ray beam with(+, −) parallel arrangement (a) and Si(444) channel-cut crystal monochromator (b). (c)Intrinsic reflectivity distribution of 10 µm thick Si(440) crystal. (d) Measured rocking
curves with intrinsic (black), (+, −) parallel arrangement (red), and Si(444) channel-cut
crystals (blue) at 9.13 keV䠊

ཧ⪃ᩥ⊩

143

ཧ⪃ᩥ⊩㻌

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