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¤J­Z^[§212_8582 _Þì§ìèsKæ¬üÅ¬ 1 Åò¤J­Z^[§212_8582 _Þì§ìèsKæ¬üÅ¬ 1 Åò¤J­Z^[§235_8522 _Þì§¡lséqæVc¬ 8 Åò¤J­Z^[§235_8522 _Þì§¡lséqæVc¬ 8 Åò¤J­Z^[§212_8582 _Þì§ìèsKæ¬üÅ¬ 1 Åò¤J­Z^[§235_8522 _Þì§¡lséqæVc¬ 8

¢ã LSI ÌJ­É¨¢ÄK{ÆÈé^Q[gdÉCUdÌQ[gâðSÉCd X üõdqªõ@ðp¢Ä¼±ÌfoCXÌªÍðsÁ½Bd X üõdqªõ@ÍCPxúËõÌpÉæÁÄßNæ¤â­ÀpIÈªèªÂ\ÉÈÁ½è@ÅèC]Ìî X üðp¢½ X üõdqªõ@Éä×ÄCo[³ªå«¢CpÂ\Èõdqs[Nª½¢Æ¢Á½Á¥ðàÂB±êÉæèC´qwxÌEÊ_»wâÎÍs¨ÌóÔCQ[gdÉ
ðÜß½½w\¢ÌohACgC¼±Ì\ÊÌohxfBOvt@CÈÇCX üõdqªõ@ÅÍ¾çêÈ©Á½îñð¾é±ÆªÂ\ÉÈÁ½B

1. Í¶ßÉ

ÉÍC±êÜÅ¾çêÈ©Á½m©ð^¦éVµ¢ªÍZpÌJ­C±üàsÂÅéBLSI Ì  « \ » Í å Æ µ Ä X P [   O ¥ É ] Á ½»±ÅÚ³êéÌªd X üõdqªõ@iHX_PES;

MOSFET Ì÷×»ÉæÁÄißçêÄ«½ªC]ÌHard X­ray Photoelectron Spectroscopy, HAXPES ÆàÄ

Si, SiO2, poly­Si ðSÆµ½ MOSFET Í·ÅÉÀEÉ
BµÄ¨èCUdÌQ[gââ^Q[gdÉÈÇCXÆVµ¢Þ¿Ì±üª¢³êÄ¢éiTable 1,
Fig. 1jBµ©µC±êçÌVµ¢Þ¿Í Si â SiO2 Éä×ÄMIÉsÀèÅ

èCEÊÅÌ½w`¬âgUÈÇ§ä·×«âèÍñíÉ½¢Bµ©àCóâÞ¿ÌÁÉÆàÈÁÄCg¬â\¢CvZXðÈÇÌJ­vfà¦Ä¨èCø¦æ­¤J­ðißéÉÍCªÍZpðì
gµ½ÂXÌ»ÛÌðªsÂÅéB±Ìæ¤É¢

ãÌ LSI J­É¨¯éªÍZpÌdv«Í±êÜÅÈã
ÉÜÁÄ¢éªCªÍÎÛÌ÷×»C¡G»ÉÎ·é

Table 1

Technology Requirements (Near­term Years)1)

Year of Production

2007 2008 2009 2010 2011 2012

MPU Half Pitch (nm)

68

59

52

45

40

36

Physical Gate Length (nm)

25

23

20

18

16

14

EOTÞ(nm) for poly­Si Gate

1.1

0.5
0.9

0.75 0.65 0.55

0.5

11

10

7

EOTÞ(nm) for Metal Gate
Drain extension Xj (nm)12.5

ÞEOT: Equivalent Oxide Thickness

9

8

Fig. 1

Schematic of n­MOSFET with (a) conventional Si materials
and (b) high­k and metal materials for sub­30 nm gate
length.

20  úËõ Jan. 2009 Vol.22 No.1
(C) 2009 The Japanese Society for Synchrotron Radiation ResearchgsbNX ¡ d X üõdqªõ@ðp¢½¼±ÌfoCXÌªÍÎêéjÅéB±Ìè@ÍÃ­©ç¤³êÄ¢½àÌ

ÌCPxúËõÉæÁÄÀpIÈªèªÂ\ÉÈÁ½Ì
Í²­ÅßÅ

é2)B·ÅÉ LSI J­ÅàL­p³êÄéªôªÈ¢s[Nðp·é±ÆªÅ«éB±êçÍd
X üãNÉæÁÄ¾çêé bgÅéªCXPS Ì

[U[ÉÆÁÄÍà¤ 1 ÂCXPS ÌªèCðÍZpª¢é X üõdqªõ@iXPS; X­ray Photoelectron Spec­ÙÚ»ÌÜÜ©¹éÆ¢¤bgª

troscopyjÆ¯lC\ÊÌg¬C»wóÔCdq\¢¢àkÊÌs[NÅà XPS Æ¯öxÌP~JVtg

È Ç Ì î ñ ð ¾ ç ê é ª C ã N X ü Æ µ Ä Al _Ka üª¾çêé±ÆC¿ÑdCX üÆË¹Í XPS Æå·

éB±êÍC[i1486.7 eVjðp¢éÊíÌÀ±º XPSiÈãCXPSjÈ¢±ÆC»µÄ XPS Æ¯ÈãÌGlM[ªð\¨ÉÎµCd X üiá¦Î 4`10 keVjðp¢é HX_PESæÑo´xª¾çêé±ÆÉæéBGlM[ªð\ÆÉÍå«­ 2 ÂÌÁ·ªÅéB1 ÂÍuo[³Ìåvo´xÍà¿ëñuir[CjÌ«\ÉË¶·èCõdqÌ^®GlM[ªå«­Èé½ßÅÌéªCäXªåÉp·é SPring­8 Ì BL47XU ÅÍCÌñe«U½Ï©Rsöª·­ÈèCXPS Ì 3`5 {C

HX_PES ÌãNfÊÏª XPS Éä×Ä 2·Èí¿20`30 nm Ìo[³ª¾çêéiFig. 2jB2 Âà©©íç¸CXPS Æ¯ÈãÌo´xª¾çêÄ¢ßÍu[¢àkÊÌãNvÅ

éBèCªèÂ\Èõdqs[öx¬³¢ÉNª¦é±ÆÉæÁÄC¤¶³fÌs[NâI[WF

HX_PES ÌpÉÂ¢ÄÍC·ÅÉ¢­Â©Ìñªs[NÉæé±Âðð¯½èCXs_O¹ÝìpÉæ

éª4_8)C{eÅÍäXªÅßsÁ½¼±ÌfoCXJ­ÖÌpðáÉCXPS ÆÌäràÜßÄ»ÌLp«ðÐî·éBÈ¨CÈºÅq×é HX_PES À±ÍC·×Ä SPring­8ÌAW

[^r[C BL47XU É¨¢ÄK}f [ ^V G ^ Ð »d q ªõ í R4000ð p¢ Ä sÁ ½
iFig. 3jBX üÍtÌfâpÌñ»ªõíÆ`l
Jbg»ÅPF»³ê½Ì¿~[År[TCYª
40 mmæ ÈºÉWõ³êÄ¨èCó¢ËpÅ¿\Êðø¦Ç­ãN·é±ÆÉæÁÄCGlM[ªð\©Â´xÈªèªÂ\ÉÈÁÄ¢é5)BªèðÍÀ±Éæ
ÁÄá±ÙÈéªCãNGlM[Í7940 eVCõdq
opxÍ88xCAu Ì¿dqÑXyNg©çß½Gl
M[ªð\Íñ0.3 eVÅéB

2. Q[gâ/VRîÂEÊÌ½w
Fig. 2

Inelastic mean free path of photoelectrons in HX_PES andlaboratory XPS. The curves were calculated using the TPP_
2M formula.3) Probing Depth is approximately three times
the inelastic mean free path where 95÷ of detected electrons
had been generated in.

Fig. 3UdÌQ[gâÌ½­Í Si îÂÆÌ¼ÚÚªïµ­C¬â»ÌãÌMÉ¨¢Ä SiO2 ÈÇÌEÊwð¶¶â·¢BUd¦Ìá¢ SiO2 Ì¶¬ÍCUdÌÉæéeÊÁðLZµCúªí¸©0.1 nm

Schematic of HX_PES experiment at SPring­8 BL47XU.

úËõ Jan. 2009 Vol.22 No.1  21Ì¢ðÍªÂ\ÅéB

3. tVTChdÉ/Q[gâEÊÌÎÍs¨^Q[gdÉÅÍC]Ì poly­Si dÉÅÍsÂð
ÈóRw`¬Éæéñ¶eÊð}§Å«C»ê¾¯Q[gâÌ EOTiSiO2 ·ZújÉÎ·évðÉßé±ÆªÅ«éiTable 1jB½¾µCgWX^®ìÌµ«¢ld³ðá­·é½ßÉÍCMOSFET Ì n ^Cp ^Éí¹ÄdÉÌdÖð§ä·éKvªèC»ê¼ê

ÙÈé^Þ¿ð¬·éÈÇvZXÌ¡G»ªâèÆÈéBÆ±ëªCpoly­Si dÉãÉ^ð¬CMµÄ`¬µ½tVTChdÉÅÍCßÌ poly­SidÉÌ n ^Cp ^ð½fµÄdÖidCÁ«©çÜéÀødÖjªÏ»·é±Æªñ³êÄ¢é9) B
NiSi dÉ/SiON EÊÉ¨¯éÏ²ÊÍ|0.4iSb h[v)`{0.1 eViB h[vjÉ¨æÑCñCI¿ÊªÍÌÊ©ç»Ì´öÍVTCh»ÌÛÉEÊÉµo³ê
ÄÎÍµ½´qwxÌs¨ih[pgjÆè³
ê½iFig. 5jBµ©µCïÌIÈJjYCÁÉs¨ÉæÁÄÏ²ûüªÙÈéRÉÂ¢ÄÍs¾ÅÁ½B»±ÅC±ÌJjYð¾ðÚIÆµÄCNi2Si/SiO2
EÊÉÎÍµ½ BCP ¨æÑ As ÌóÔð XPS Æ HX
Fig. 4(a) Si2s and (b) Si1s spectra of LaAlO3 (3 nm)/Si measured
by XPS and HX_
PES, respectively.

_PES Éæè²×½11_12)B
Fig. 6 ÉCSi îÂð@B¤¨æÑEGbgGb`OÉæèµÄ SiO2 ¤©çªèµ½

Ê XPS ÌÊð¦·BB h[v¿Ì B1s XyNgÅÍCà®óÔÆÅàdCÁ«Éå«Èe¿ð^¦é½ßCúâg¬Ìè_»¨óÔÉ·és[Nª\êÄ¨èCB ª Ni2Si ÊIÈ]¿ÉÍ XPS ª©¹È¢B

ià®jÆ SiO2 i_»¨jÌoûÉ¶Ý·é±Æªª©

Fig. 4 Í¢ãUdÌQ[gâÌóâÌ 1 ÂÅ

Á½BêûCP h[v¿Ì P2p XyNgÅÍCSi2p

é LaAlO3iú 3 nmjÆ Si îÂÌEÊwð XPS ¨æÑs[NÉR·évYXs[Nª±Â·é¤¦C

HX_PES Åªèµ½ÊÅP2p s[Nª 2p1/2 Æ 2p3/2 Ì 2 {Éªô·é±Æ©çCéB±ÌnÅÍ La4d s[

NÆ Si _»¨ÉR·é Si2p s[NªdÈÁÄµÜ¤½

Ô_»¨ÌL³ÈÇÚ×ÈðÍÍsÂ\ÅÁ½B±êßCXPS ÅÍ Si2s s[Nðp¢ÄðÍðsí´éð¾ÈÉÎµCHX_PES Åªèµ½ P1s XyNgÅÍCà®

¢9)Bµ©µCSi2s Í»ÌP~JVtgÊÉÎµÄs[óÔÆÔ_»¨ÌÝÅ®SÈ_»¨Í©çê¸CP ÍNªå«¢½ßCSi _»¨Ì¶¬ÍmFÅ«éàÌ

Ni2Si ¨æÑ Ni2Si/SiO2 EÊÌ Ni2Si ¤iÔ_»¨jÌCTuILTChÌL³ðÜß½Ú×ÈðÍÍïµ¢BÉ¶Ý·é±Æª¾ç©ÆÈÁ½B±Ìæ¤ÉCXs_±êÉÎµÄ HX_PES ÅÍCXPS ÅãNÅ«È¢ Si1s

O¹ÝìpÉæéªôÌÔuª¬³­s[Nª£ª¡Gs[Ni©GlM[`1840 eVjðp¢é±ÆªÅ«

É Èè â· ¢ Al © ç Cl ÜÅ Ì 2p s [N ÉÂ ¢ÄÍ C

éBSi1s Í Si2s Éä×Äs[Nª·­CSi2p s[NÌHX_PES Å 1s s[Nðªè·é±ÆÉæèðÍÌM«æ¤ÈXs_O¹ÝìpÉæés[Nªôà³¢±Æ

ªiiÉüã·éBÜ½±êçÌ 1s s[NÍärIãN

éBSi1s X

fÊÏªå«­C¢o´xðL·é±Æ©çC{áÌyNgð Si2p XyNgÆä×éÆCo[³Ìå¿ÅdÉúð10 nm öxÉ·êÎ»ÌÜÜdÉ¤©çÉæè Si îÂ¬ªÉÎ·éEÊwÌä¦Í¬³­ÈéàÎÍs¨ÌXyNgð¾é±ÆªÅ«½BÈ¨CP©çCæèÚ×ÈðÍðs¤±ÆªÂ\Åé As h[vÌÌCEÊwªÙÚ SiO2 ÌÝÅ`¬³êÄ¢é±ÆðÍh[v¿ÆdÖÌÏ²ûüª¯¶ÅÁ«èÆmFÅ«éBÜ½ Al ÌóÔðÍÉ¨¢ÄàC¿É¨¢ÄàCAs2p3/2 XyNgª P1s Æ¯lÌXü

HX_PES ÅÍs[NªôðÆàÈ¤ Al2pÌãíèÉ Al1sð¦·±Æªª©Á½Bs[Nðp·é±ÆªÅ«CXPS æèàÚ×ÅM«

22  úËõ Jan. 2009 Vol.22 No.1

È ã Ì  Ê ð ³ É C e s  ¨ Ì   ó Ô © ç Ni2Si /gsbNX ¡ d X üõdqªõ@ðp¢½¼±ÌfoCXÌªÍ

Fig. 5(a) Schematic of fully silicidation process with dopant segre­
gation. (b) C_V characteristic of B and P doped FUSI gate
stack. Dopant for n­type (P, As, Sb) causes decrease ineective work function of gate electrode, while one for p­
type (B, Al) causes increase in it.

SiO2 EÊÉÎ·é»Ì¶ÝÊuðµ§Éß½¤¦ÅCdÖÌÏ²ûüªEÊ_C|[Éæèè³êéÆ·é¨fðñÄµ½iFig. 7jBNi2Si/SiO2 EÊª}sÅéÆ¼è·éÆC»wÉÆàÈ¤dqÌöóÉ

æÁÄªÉª¶¶CEÊ_C|[ª`¬³êéÂ\«ªéBµ©µCmh[vÌêCNi Æ Si ÍÙÚ¯¶dCA«xðÂ±Æ©çiTable 2jC»êçÌªÉÍE³êÄå«ÈEÊ_C|[Í¶¶È¢B±êÉÎµCE
ÊÌ Ni2Si ¤É¶Ý·é P â As Í Si æèàdCA«xªå«­Cmh[vÉä×ÄdÖð¸­³¹éûü
ÌEÊ_C|[ª¶¶éBêûCB à Si æèÍdCA
«xªå«­CEÊÌ Ni2Si ¤É¶Ý·êÎdÖð¸­³¹éûüÉñ^·éªCEÊÌ SiO2 ¤É¶Ý·é±Fig. 6

Spectra of B­doped and P­doped Ni2Si/SiO2/Si samples. (a)B1s and (b) P2p spectra were measured by XPS from SiO2
surface of backside­etched samples. (c) P1s spectrum wasmeasured by HX_
PES from sputter­etched Ni2Si surface
with the residual thickness of 10 nm.

ÆÅdÖðå³¹éûüÉEÊ_C|[ª¶¶éB±Ìæ¤ÉEÊÌdÖ§äÉ¨¢ÄCÎÍs¨
ÌÊ¾¯ÅÈ­C»ÌÎÍÊuªJMð¬é±ÆðßÄ¦·±ÆªÅ«½B±Ìæ¤ÈEÊ§äwÍlXÈEÊÅ

4. Q[gX^bN\¢ÌohACg

Ì±üª¢³êÄ¨èCEÊ_C|[Ì¨IN¹Ì
1 ÂðßÄ¼ÚÏªµ½{ÊÌÓ`Íå«¢B

Q[gdÉ/Q[gâ/Si îÂ©çÈéQ[gX^bN\¢ÅÍC»ê¼êªÙÈéoh\¢ðÂ½ßC»êçªÇÌæ¤ÉACgµÄ¢é©ÉæÁÄdC

úËõ Jan. 2009 Vol.22 No.1  23

Table 2

Pauling's Electronegativity13)

Element

Electronegativity

B

2.04

O

3.44

Si

1.90

P

2.19

Ni

1.91

As

2.18

Fig. 7

Schematic of interface dipoles caused by segregated dopants. In the case of P­
doped, O atom extracts more charge from Si atom than segregated P atom andresults in an interface dipole towards SiO2. But in the case of B­doped, some of B
atoms segregated to SiO2 side of interface, then results in an interface dipole
towards Ni2Si.

Á«Íå«­e¿ðó¯éB±ÌohACgio
hItZbgjÍCzIÉÍÂXÌEÊÌdÖÅÜéÍ¸Å

éªC^Q[gdÉâUdÌQ[gâª±ü³ê½»ÝÌQ[gX^bN\¢ÅÍCEÊ
É¨¯éÊûÊâEÊwÌ¶¬CEÊÊÉæésjOCOqÌEÊ_C|[Ìe¿ÈÇlXÈvöª»Ì§äÍÉßÄ¢ïÅèCéBXPS ÍohAC

gð¼ÚIÉßé±ÆªÅ«éè@Ì 1 ÂÅèCÏw\¢¿É¨¯éàks[NÔuâ¿dqÑXyNg
©ç¿dqÑsA±Ê DEV ª¾çêéÙ©CohM
bv Eg ð^¦çêêÎ`±ÑsA±Ê DEC àßé±Æ
ªÅ«é7,14_15)Bµ©µCXPS Ío[³ª nm Æ¬³¢±Æ©çCQ[gX^bN\¢SÌðêxÉ]¿·é±
ÆÍsÂ\Å

èCQ[gdÉ/Q[gâEÊÆQ[gâ/Si îÂEÊÌohACgðÊXÉß
Äc_¹´éð¾È©Á½iFig. 8jB»±Å HX_PES Ìo[³Ìå«³Æ Si1s s[NÌo´xÌ³ð©
µCQ[gX^bN\¢ÅÌohACg]¿ð

Fig. 8

Schematic of band alignment analysis using (a) XPS and(b) HX_PES. DEV and DEC are band osets of valence band
maximum (VBM) and conduction band minimum (CBM)
respectively.

¢µ½B¿\¢Í TaC (100 nm)/Er (2.5 nm)/TaC (1.5 nm)/½¿ÔÌohACgÌÎÏ»ð Fig. 10 É¦

HfSiON (3 nm)/Si îÂÅC·MiHTAjÌL³Å

·BHTA LèÅÍCHTA ³µÉä×Ä HfSiONCSi îÀødÖªÙÈé 2 íÞðärµ½16) B½¾µC±

ÂÌ¿dqÑã[iVBMjª»ê¼ê0.3 eVC0.2 eV ¸ÌÜÜÅÍQ[gdÉªú·¬é½ßCXpb^Gb`Âã¸µÄ¨èCTaC dÉÌÀødÖª0.2 eV ¾¯OÉæèXÎ\Êðì»µC±êðdqªõíÌÊuªðÁµ½±ÆÉÈéB±Ì´öÆµÄÍCMÉÆàÈ[hi14ª¯ªèjðgÁÄªèµ½B±êÉæ¤eEÊÅÌ½ÈÇªl¦çêÄ¢éBÜ½±±ÅÍèCuàÅXpb^Gb`Oðs¤±ÆÈ­KØÈ¿ÔÌÎÏ»ÌÝÉÚµ½ªCSi îÂÉ¨¯é Si1súÌæÌXyNgð¾é±ÆªÅ«éBFig. 9 É HTA

Æ VBM ÌÔuCHfSiON É¨¯é Hf3d5/2 Æ VBM ÌÔ³µÌeXyNgÆÎ·éªèÊuð¦·Be³fÌuðßÄ¨¯ÎC½¾¿ÉeEÊÌ DEV ðZo·é±ås[NÌÊuªúÉæç¸êèÅé±ÆC\Êz

ÆªÂ\ÅéB½¾µCHX_PES ÅÍõdqúoÌfÉ·é C1s s[NÌVtgà©çêÈ¢±½µÉæéGlM[¹¸irecoil eectjªñ³êÄÆ©çC¿ÑdÌe¿Í³Å«éÆl¦çêéBew¨è17) CVBM ð\¬·é´qO¹ÉæÁÄÍ DEV Ìâ

ÉR·é Ta3d5/2, Hf3d5/2, Si1s Ìs[NÊu©çßÎlª¸êéêàY»

24  úËõ Jan. 2009 Vol.22 No.1

é18)BgsbNX ¡ d X üõdqªõ@ðp¢½¼±ÌfoCXÌªÍ

Fig. 9

HX_PES spectra of TaC/Er/TaC/HfSiON/Si without HTA. The sample was slant­etched with Ar ion sputtering
until Si substrate partially appears.

»µÉ­¢iLAð¶¶È¢jC·Èí¿ïR¦ªºªçÈ¢Æ¢Á½âèªèCüû@â»ÌãÌMû@ÈÇª·ñÉ¤³êÄ¢éB»±ÅdvÆÈéLAÊÆ\ÊÌ×Êð½fµ½ohxfBOðC
HX_PES ÍñjóÅ]¿Â\ÅéB¼±ÌÅÍLAZxÉÆàÈÁÄtF~ÊÌÊuªÏ»·é½ßC
Fig. 11 É¦·æ¤ÈohxfBOª¶¶éB»ÌÊCVBM ÆÆàÉ Si1s s[NÊuà[³ÉæÁÄÏ»µCXyNgÍ»êçÌdËí¹ÅñÎÌÈs[NÆÈéB½¾µCSi ÌêÍohMbvª1.1 eV µ©
È­CohxfBOÌå«³ª¬³¢±Æ©çC±±ÅÍª©èâ·­·é½ßÉohMbvª3.4 eVÆå«È GaN Ì]¿ÊÉÂ¢ÄÐî·éB¿Í n_GaNCp_GaN ¨æÑ p{_GaN Ì 3 íÞÅC»ê¼ê n_GaN îÂãÉGs^LV¬·³¹C\Êð¤Fig. 10

Band diagram of TaC/Er/TaC/HfSiON/Si measured by
HX_PES. HTA causes VBM of Si to shift upward by 0.2 eVthat corresponds to increase in the work function of TaC in­
terface.

Åµ½àÌÅ

¢½ßC»×ª½­ÜÜêé19) BFig. 12 Í XPS ¨æÑ HX_PES Åªèµ½ Ga2p3/2CN1s XyNgÅéB

p{ _GaN ÌXyNgðär·éÆCXPS ÅÍs[N`óªÙÚÎÌÅ

5. ¼±Ì\ÊÌohxfBOéBÈ¨Cn ^ÉÍ SiCp ^ÉÍMg ðh[v·éªC«»µÉ­¢ Mg Íh[vÊª½éÌÉÎµCHX_PES ÅÍ©Gl

M[¤ÉñÎÌÅ

éBXPSÅÍ\ÊÌGa_»¨ÌÝªo³êÄ¢éÆàl¦çêéªCHX_PES ÌXyNSi îÂÖÌs¨CIüÉæÁÄ`¬³êé\[gð¿ÔÅär·éÆCGa2p3/2 Æ N1s ÅÍ¯öxÌ

XChCÌæÍCXP[O¥É]ÁÄæèó­ÈVtgð¦µÄ¨èC³çÉs[NÍÙÈéàÌÌ¯¶ÁÄ«Ä¨èCn[tsb`45 nm È~ÅÍ10 nm ÈºÌæ¤Ès[N`óÌÏ»ð¦µÄ¢é±Æ©çC±êçÍÚ[³ªv³êéiTable 1jB±Ìæ¤ÈÉóÌæÉ

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Fig. 11

Schematic of band bending analysis using HX_PES. Bandbending in the probing depth gives asymmetric­photoelec­tron­peak which is sum of shifted peaks generated in each
depth.

½fµ½àÌÆ»fÅ«éBÂÜèCs[N`óªÙÚÎÌÈ n_GaN ÅÍohxfBOª¶¶Ä¨ç¸C»Ì¼Ì¿ÅÍC[³ûüÌohxfBOÆõdq
om¦ÌR{[VÉæÁÄñÎÌÈs[N`óÉÈÁÄ¢éÆl¦çêéB±êðèÊIÉðÍµÄ¾
çê½ VBM Ì[³Ï»ð Fig. 13 É¦·B±±ÅÍÈPÌ½ßCn_GaN ¿ÌXyNg©çß½fÖ
10{ð0.2 eV ÔuÉÅèµÄ N1s XyNgðtBbeBOµCeXÌs[N­xä©çõdqª­¶µ½[³ÍÍðèÄ½Bp_GaNCp{ _GaN Æà\ÊÉ¨¯éVBM Í2.2 eV tßÉèC»×ÉR·é\ÊÊÉæÁÄsjOª¶¶Ä¢éÆl¦çêéBÜ½Cp{_
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\ÊÉ¨¯éliVBMjÆCs¨ÊFig. 12

XPS and HX_
PES spectra of GaN samples. In the case of
HX_
PES, Ga2p3/2 and N1s peaks show the same energy
shift as the same peak shape between three samples.

é¢ÍdCÁ«©çß½oNÉ¨¯él©ç»Ìå«³ðè·é±Æµ©Å«È©Á½Bµ©µCohxfBOÌ[³ª30 nm öxÜÅÅ

êÎCHX_PES ÌÝÅ»Ìå«³¨æÑ[³ðæè¢¸xÅ]¿·é±ÆªÂ\ÅéBàkÊÌpÆ¢¤ HX_PES Ì 2 ÂÌÁ·ð©·±ÆÅCàê½EÊwÌªÍCQ[gX^bN\¢¿ÌohACg]¿C¼±ÌÌohxfBO]¿ÈÇC±êÜÅ¾çêÈ©Á½îñð¾é±ÆªÅ«

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26  úËõ Jan. 2009 Vol.22 No.1

gsbNX ¡ d X üõdqªõ@ðp¢½¼±ÌfoCXÌªÍ

Fig. 13Band bending proles calculated from N1s spectra and photoelectron escape probability. Each Bar corresponds
to a N1s peak component and expresses its depth­range of generation.

¨èC»êç XPS [U[ÌªèCðÍZpª©¹é±Æ©çCHX_PES Íîb¤ÌÝÈç¸YÆpÌÊÅàL¢ªìÅLøÆl¦çêéB·ÅÉ SPring­8 ÅÍCHX_PES ÉÎ·éj[YÌÁÉ¦ÄYÆpr[C BL46XU Åà HX_PES À±ªÂ\ÉÈÁÄ¨èC¡ãÍYÆpàÜßÄ¢Á»¤ HX_PES ÌyªiÞàÌÆúÒ³êéB

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È¨C{eÅÐîµ½¤ÌêÍC¶ÈwÈÌd_i m e N m  W [ x  Û è i 2004B0702­NI­np­Na,
2005A0238­NI­np­Na, 2006A1636, 2007A1994jÆµÄÀ18){µÜµ½B

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gsbNX ¡ d X üõdqªõ@ðp¢½¼±ÌfoCXÌªÍHard X­ray Photoelectron Spectroscopy for
Semiconductor Device Analysis
Masahiko YOSHIKI
Masamichi SUZUKI
Yoshinori TSUCHIYA
Reika ICHIHARA
Shinji SAITOShiro TAKENO

Corporate Research & Development Center, Toshiba Corporation
1, Komukai­Toshiba­cho, Saiwai­ku, Kawasaki, 212_
8582, Japan
Corporate Research & Development Center, Toshiba Corporation
1, Komukai­Toshiba­cho, Saiwai­ku, Kawasaki, 212_
8582, Japan
Corporate Research & Development Center, Toshiba Corporation
8, Shinsugita­cho, Isogo­ku, Yokohama, 235_
8522, Japan
Corporate Research & Development Center, Toshiba Corporation
8, Shinsugita­cho, Isogo­ku, Yokohama, 235_
8522, Japan
Corporate Research & Development Center, Toshiba Corporation
1, Komukai­Toshiba­cho, Saiwai­ku, Kawasaki, 212_
8582, Japan
Corporate Research & Development Center, Toshiba Corporation
8, Shinsugita­cho, Isogo­ku, Yokohama, 235_
8522, Japan

Abstract We have applied hard x­ray photoelectron spectroscopy (HX_PES) to study of semiconductor
devices, especially future LSIs which need new materials as metal gate electrode or high­k gate insulator. HX_PES has became a practicable method in these several years with use of high­ux x­rays from third­generationsynchrotron sources, and it has advantages of larger probing depth and more of measurable photoelectron
peaks compared to conventional laboratory x­ray photoelectron spectroscopy (XPS). With these advantages,
HX_PES provides novel information such as chemical states of thin oxide or segregated atoms at deep buriedinterface, band alignment in thick metal/insulator/semiconductor structure and band bending prole of semi­
conductor surface.

úËõ Jan. 2009 Vol.22 No.1  29