PROGRAM【October 9th, Wednesday】
Opening Session (13:00-13:10)
Plenary Session (13:10-14:00)
Chair: J. Suda (Nagoya University)
Plenary 13:10 (50min)
1
Recent activities on visible range nanocolumn (NC) emitting devices- New development on micro LED K. Kishino*,**, K. Narita*, A. Yanagihara*, D. Hatakeyama*, K. Takimoto*, N. Sakakibara*, T. Oto***,**, Ichiro Nomura*,** and R. Togashi*,***
Sophia University, **Sophia Nanotechnology Research Center, ***Yamagata University

Session We1: Electron Devices & Spin Devices (14:00-15:12)
Chair: S. Naritsuka (Meijo University)
We1-1 [Invited] 14:00 (30min+poster)Normally-off GaN MOS-HFETs fabricated by etchingless process
T. Nanjo, H. Koyama, A. Imai, T. Hayashida, T. Watahiki and N. Miura
Mitsubishi Electric Corporation

7

We1-2
14:30 (3min+poster)
Evaluation of trap at epi layer of AlGaN/GaN HEMT with low frequency S parameter
S. Urano, Q. Ma and A. Wakejima
Nagoya Institute of Technology

9

We1-3
14:33 (3min+poster)
Reduction of thermal resistance of GaN HEMT using graphite carbon
A. Fukui, L. Li, Y. Sakaida and A. Wakejima
Nagoya Institute of Technology

11

We1-4
14:36 (3min+poster)
Record breakdown fields of 2.8-3.5 MV/cm in GaN p-n junction diodes
T. Maeda*, T. Narita**, H. Ueda**, M. Kanechika**, T. Uesugi**, T. Kachi***, T. Kimoto*, M. Horita*, *** and J. Suda*, ****Kyoto University, **Toyota Central R&D Labs., Inc., ***Nagoya University

13

We1-5
14:39 (3min+poster)Time-resolved simulation of the negative capacitance at ferroelectric/semiconductor hetero-junction
K. Takada, T. Yoshimura and N. Fujimura
Osaka Prefecture University

15

We1-6
14:42 (3min+poster)Magnetic and electrical properties of epitaxial Co2FeSi/GaN(0001) heterostructures for spintronic applications
S. Yamada, R. Honda, Y. Goto, S. Ichikawa, J. Tatebayashi, Y. Fujiwara and K. Hamaya
Osaka University

17

We1-7
14:45 (3min+poster)Spin waves transport and estimation in a paramagnetic organic chemical compound
H. Jang, M. Matsushima, R. Ohshima, Y. Ando and M. Shiraishi
Kyoto University

19

We1-8
14:48 (3min+poster)
Fabrication of a spin device with a nonmagnetic metal/topological insulator interface for spin-charge converter
T. Nishijima, Y. Ando, R. Ohshima and M. Shiraishi
Department of Electronic Science and Engineering, Kyoto University

21

We1-9
14:51 (3min+poster)
Evaluation of composition dependence of spin-orbit torque in Pt1-xMnx / CoFeB structure
K.V. De Zoysa, R. Itoh, Y. Takeuchi, S. DuttaGupta, S. Fukami and H. Ohno
Tohoku University23- P5 -

We1-10
14:54 (3min+poster)A study on a spin-charge-interconversion phenomenon in an ultrathin Cu film on a ferrimagnetic insulator using an ionic-gating
S. Yoshitake, R. Ohshima, Y. Ando and M. Shiraishi
Kyoto University25

We1-11
14:57 (3min+poster)Half-metallic Heusler alloy thin films grown by MBE
M. Oogane*, A. P. McFadden**, K. Fukuda*, M. Tsunoda*, Y. Ando* and C. J. Palmstrom***
Tohoku University, **University of California, Santa Barbara

27

We1-12
15:00 (3min+poster)
Structure and magnetic properties of sputter-deposited L10-MnAl thin films for high-density STT-MRAM
R. Okuda, T. Saino, Y. Takeuchi, B. Jinnai, S. Ikeda, S. Fukami and H. Ohno
Tohoku University29

We1-13
15:03 (3min+poster)
Asymmetrically antibunching behavior of photon correlation between Zeeman splitting states of positive trion in semiconductor
quantum dots : Acceleration of electron spin flip process induced by nuclear field
H. Sasakura, R. Kaji, R. Matsusaki, K. Oomiya, S. Kamono, S. Yamamoto and S. Adachi
Hokkaido University31

We1-14
15:06 (3min+poster)
Benchmark of nonlinear optical crystals for single-path waveguide optical parametric amplifier
T. Komatsu, R. Noro, M. Uemukai, T. Tanikawa and R. Katayama
Osaka University

33

We1-15
15:09 (3min+poster)
Design of ZnO/ZnMgO MQW microcavity with SiO2/ZrO2 DBR for quantum entangled photon pair generation
Y. Matsui, T. Yano, M. Uemukai, T. Tanikawa and R. Katayama
Osaka University

35

Break (15:12-15:22)
Session We2: Oxides (15:22-16:52)
Chair: Y. Otoki (SCIONICS)
We2-1 [Invited] 15:22 (30min+poster)Electron microscopy studies of electronic materials
K. Mitsuishi, K. Kimoto, Y. Irokawa, H. Nabatame and Y. Koide
National Research Institute for Materials Science

37

We2-2
15:52 (3min+poster)Corundum structured wide band gap semiconductors with p-type conductivity
K. Kaneko*, S. Kan*, T. Shinohe** and S. Fujita**
Kyoto University, ** FLOSFIA INC.

39

We2-3
15:55 (3min+poster)Thickness dependence of phase transition temperature of -Ga2O3 films on sapphire substrates
R. Jinno, K. Kaneko and S. Fujita
Kyoto Univeristy

41

We2-4
15:58 (3min+poster)
Bismuth-assisted effect for the growth of -Ga2O3 films grown on c-plane sapphire substrates by mist chemical vapor deposition
D. Tahara, H. Nishinaka, Y. Arata, S. Hasegawa and M. Yoshimoto
Kyoto Institute of Technology

43

We2-5
16:01 (3min+poster)
Fabrication of periodically-poled structure in MgO:s-LiTaO3 by voltage application with SiO2 insulation layer
R. Noro, M. Uemukai, T. Tanikawa and R. Katayama
Osaka University

45

We2-6
16:04 (3min+poster)Control of epitaxial orientation and crystal structure of HfO2: Y/Si films by oxygen partial pressure
Y. Saho, D. Kamada, K. Takada, D. Kiriya, T. Yoshimura, A. Ashida and N. Fujimura
Osaka Prefecture University

47

We2-7
16:07 (3min+poster)
Effects of bottom electrodes on the epitaxial growth of YbFe2O4 films
K. Shimamoto, K. Miura, J. Tanaka, D. Kiriya, Y. Yoshimura, A. Ashida and N. Fujimura
Osaka Prefecture University

49

We2-8
16:10 (3min+poster)
Origin of photo-induced current of strongly correlated ferroelectric YMnO3 epitaxial thin film
K. Miura, J. Tanaka, D. Kiriya, T. Yoshimura, A. Ashida and N. Fujimura
Osaka Prefecture University

51- P6 -

We2-916:13 (3min+poster)Bandgap control of epitaxial Ni1-xMgxO thin film by using mist chemical vapor deposition method
T. Ikenoue, M. Miyake and T. Hirato
Kyoto University

53

We2-10
16:16 (3min+poster)
Impact of hydrochloric acid on mist CVD growth of GIO ternary alloys
S. Takahashi, K. Rikitake, T. Yamaguchi, H. Nagai, M. Sato, T. Onuma and T. Honda
Kogakuin University

55

We2-11
16:19 (3min+poster)
Effect of temperature on the preparation of MoO2 thin films by a mist CVD method
Y. Matamura, T. Ikenoue, M. Miyake and T. Hirato
Kyoto University

57

We2-12
16:22 (3min+poster)Electrical properties of reduced graphene oxide films prepared under an electric field
A. Maeta, Y. Sato, Y. Chonan, T. Komiyama, K. Kotani, H. Yamaguchi, T. Aoyama and S. Yamauchi
Akita Prefectural University

59

We2-13
16:25 (3min+poster)Comparative study on DUV emission properties of rocksalt-structured MgxZn1-xO alloys
K. Kudo*, K. Ishii**, M. Ono*, Y. Fujiwara*, K. Kaneko**, T. Yamaguchi*, T. Honda*, S. Fujita** and T. Onuma**
Kogakuin University, **Kyoto University

61

We2-14
16:28 (3min+poster)Growth of highly-resistive ZnO films fabricated using non-equilibrium plasma generated near atmospheric pressure
S. Takarae, D. Kiriya, T. Yoshimura, A. Ashida and N. Fujimura
Osaka Prefecture University

63

We2-15
16:31 (3min+poster)
Water-organic cosolvent effect on nucleation of solution-synthesized ZnO nanowires
K. Nagashima, Y. Akihiro, T. Hosomi, M. Kanai, T. Takahashi, G. Zhang and T. Yanagida
Kyushu University

65

We2-16
16:34 (3min+poster)Formation and optical characteristics of Eu-doped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapour
deposition
M. Mishina, J. Tatebayashi, T. Nakajima, S. Ichikawa and Y. Fujiwara
Osaka university67

We2-17
16:37 (3min+poster)Observation of the down-conversion behavior in ZnO:Tm,Yb/ZnO core-shell nanowires
J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa and Y. Fujiwara
Osaka University69

We2-18
16:40 (3min+poster)
Enhancement of Er luminescence in microdisk resonators with Er,O-codoped GaAs
R. Higashi, M. Ogawa, J. Tatebayashi, S. Ichikawa, M. Kondow and Y. Fujiwara
Osaka University

71

We2-1916:43 (3min+poster)
Efficient laser cooling in rare-earth doped oxides at high temperature
Y. Nakayama, Y. Harada and T. Kita
Kobe University73

We2-20
16:46 (3min+poster)Chemical vapor deposition of graphitic carbon nitride films and Boron incorporation for carbon based semiconductor systems
N. Urakami*,**, M. Kosaka* and Y. Hashimoto*,***Shinshu University, **Research Initiative for Supra-Materials

75

We2-21
16:49 (3min+poster)
Statistical study of shape for submonolayer 2D islands of DPh-DNTT prepared by vacuum deposition
Y. Hattori, Y. Kimura and M. Kitamura
Kobe University

77

Break (16:52-17:02)
Poster Session I (We1, We2) (17:02-19:00)
Dinner (19:00-20:00)- P7 -

Rump Session (20:00-21:30)“The moment when researchers change their research topic- Why it happens and How they survive -”Organizer:

J. Suda(Nagoya University)

Panelists:

S. Fujita
Y. Fujiwara(Kyoto University)(Osaka University)- P8 -

【October 10th, Thursday】
Session Th1: Growth (8:30-10:18)
Chair: T. Araki (Ritsumeikan University)Th-1 [Invited] 8:30 (30min+poster)
Fabrication of high-crystalline-quality AlN/sapphire template for deep-UV LED
H. Miyake, K. Shojiki, S. Xiao, K. Uesugi, H. Koizumi and S. Kuboya
Mie University

79

Th1-2
9:00 (3min+poster)Comparison of growth method of III-V compounds
A. Ubukata*, R. Oshima***, Y. Shoji***, K. Makita***, H. Sodabanlu**, K. Watanabe**, S. Koseki*, T. Sugaya***, Y. Nakano****and M. Sugiyama*****Taiyo Nippon Sanso Corp., **Research Center for Advanced Science and Technology, ***National Institute of Advanced
Industrial Science and Technology, ****The University of Tokyo

83

Th1-3
9:03 (3min+poster)
Selective epitaxy of InGaAlAs MQWs using InP-on-insulator substrate for integrating wide-wavelength range III-V devices on Si
T. Fujii, T. Sato, K. Takeda, T. Kakitsuka and S. Matsuo
NTT Corporation

85

Th1-4
9:06 (3min+poster)
Crystallinity of recrystallized InxGa1-xAs layer on In0.48Ga0.52As
Y. Horita*, K. Hirayama*, Y. Tominaga*, Y. Ohno**, N. Ikenaga*** and O. Ueda*****Hiroshima University, **Tohoku University, ***Kanazawa Institute of Technology, ****Meiji University

87

Th1-5
9:09 (3min+poster)
Solid-phase crystallization for high-quality polycrystalline Ge thin films and its application to GaAs
M. Saito, T. Nishida, K. Moto, T. Suemasu and K. Toko
University of Tsukuba

89

Th1-6
9:12 (3min+poster)High photoresponsivity in polycrystalline GaAs(111) film on glass formed by molecular beam epitaxy on a Ge seed layer
T. Nishida, T. Suemasu and K. Toko
University of Tsukuba

91

Th1-7
9:15 (3min+poster)
GaNAsBi heterostructure nanowires showing zincblende and wurtzite related x-ray diffraction peaks
S. Mori, M. Yukimune, R. Fujiwara and F. Ishikawa
Ehime University

93

Th1-8
9:18 (3min+poster)Growth conditions of low-temperature-grown GaAs1-xBix
Y. Horita*, Y. Tominaga*, M. Yukimune**, R. Fujiwara** and F. Ishikawa***
Hiroshima University, **Ehime University

95

Th1-9
9:21 (3min+poster)
Crystallinity evaluation of low-temperature-grown GaAs1-xBix
Y. Takagaki*, Y. Horita*, Y. Tominaga*, M. Yukimune**, R. Fujiwara** and F. Ishikawa***
Hiroshima University, **Ehime University97

Th1-10
9:24 (3min+poster)
Reduction of threading dislocations of MOVPE-grown AlN on sputtered-annealed AlN with nano-patterned-sapphire substrates
Y. Iba, K. Shojiki, K. Uesugi, S. Kuboya, S. Xiao and H. Miyake
Mie University,99

Th1-11
9:27 (3min+poster)Growth of GaN single crystals with low oxygen concentration by Li-added Na-flux method
T. Nakajima, T. Yamada, K. Murakami M. Imanishi, M. Yoshimura and Y. Mori
Osaka University101

Th1-12
9:30 (3min+poster)
Evaluation of Al layer formed by TMAl preflow on SiC surface for GaN growth
M. Deura, Y. Zhu, T. Momose and Y. Shimogaki
The University of Tokyo103

Th1-13
9:33 (3min+poster)
Suppression of the inclusions in GaN crystals using flux-film-coated technique in Na-flux method
K. Endo, T. Yamada, K. Murakami, M. Imanishi, M. Yoshimura and Y. Mori
Osaka University

105

Th1-14
9:36 (3min+poster)Surface-pit elimination of GaN-related materials using Eu-doping technique
T. Morikawa, S. Ichikawa, J. Tatebayashi and Y. Fujiwara
Osaka University

107- P9 -

Th1-15
9:39 (3min+poster)
The suppression of change of lattice curvature by addition of CH4 gas in OVPE growth*
K. Ishibashi , A. Simizu*, M. Kamiyama*, S. Tsuno*, A. Kitamoto*, M. Imanishi*, T. Sumi**, J. Takino**,Y. Okayama*,**, M. Nobuoka**, M. Hata***, M. Isemura****, M. Yoshimura* and Y. Mori**
Osaka University, **Panasonic Corporation, ***Itochu plastics Inc., ****Sosho-ohshin Inc.

109

Th1-16
9:42 (3min+poster)
Pulsed DC sputtering growth of Mg-doped GaN thin film
Y. Onishi*, S. Imai*, H. Miura**, N. Takahashi**, M. Uemukai*, T. Tanikawa* and R. Katayama**
Osaka University, **Tokyo Electron Technology Solutions Limited

111

Th1-17
9:45 (3min+poster)Surface-morphology control using appropriate impurity-doping for vicinal (0001) GaN
S. Ichikawa, J. Tatebayashi and Y. Fujiwara
Osaka University

113

Th1-189:48 (3min+poster)
Optical characteristics of high In composition GaInN MQWs grown by RF-MBE
R. Yoshida, Y. Nakajima, H. Hirukawa, S. Ohno, T. Yamaguchi, T. Onuma and T. Honda
Kogakuin University115

Th1-199:51 (3min+poster)
Heteroepitaxial growth of GaN thin films on sapphire substrates by pulsed DC sputtering deposition
S. Imai*, Y. Onishi*, H. Miura**, N. Takahashi**, M. Uemukai*, T. Tanikawa* and R. Katayama**
Osaka University, **Tokyo Electron Technology Solutions Ltd.

117

Th1-20
9:54 (3min+poster)
Effect of In adlayer on MBE growth of InN by DERI method
N. Goto, K. Watanabe, S. Mouri, T. Araki and Y. Nanishi
Ritsumeikan University119

Th1-21
9:57 (3min+poster)
Impact of the atomic configuration on the electronic structures of InxGa1-xN
M. Imura* and Y. Ota***
National Institute for Materials Science, **Tokyo Metropolitan Industrial Technology Research Institute121

Th1-22
10:00 (3min+poster)
Epitaxial relationship in Cu3N layer grown on c-plane sapphire substrate by Mist CVD
N. Wakabayashi, M. Takahashi, T. Yamaguchi, T. Onuma and T. Honda
Kogakuin University123

Th1-23
10:03 (3min+poster)
Si-Ge intermixing at Si-capped Ge mesa sidewalls selectively grown on Si
R. Katamawari, K. Kawashita and Y. Ishikawa
Toyohashi University of Technology

125Th1-24
10:06 (3min+poster)
Direct conversion of P ion implanted graphite to diamond by high pressure and high temperature techniqueK. Otsuyama, R. Fukuta, Y. Murakami, F. Ishikawa, M. Matsushita, T. Shinmei, H. Ohfuji and T Irifune
Ehime University127

Th1-25
10:09 (3min+poster)Observation of impurity incorporated regions in hexagonal boron nitride single crystals by high-pressure, high-temperaturesynthesis
K. Watanabe and T. Taniguchi
National Institute for Materials Science129

Th1-26
10:12 (3min+poster)
Unfolding band structures of cubic BN related alloys
Y. OtaTokyo Metropolitan Industrial Technology Research Institute131

Th1-27
10:15 (3min+poster)
Crystal-quality enhancement of sputtered h-BN on sapphire by high-temperature face-to-face annealing
R. Kataoka, S. Iwayama, H. Koizumi and H. Miyake
Mie University

133

Break (10:18-10:28)
Poster Session II (Th1) (10:28-12:00)
Lunch (12:00-13:00)- P10 -

Session Th2: Nano structures & Solar cells (13:00-14:36)
Chair: N. Fujimura (Osaka Prefecture University)Th2-1 [Invited]
13:00 (30min+poster)
Efficiency and stability development of halide perovskite solar cells*,**
T. Miyasaka*
Toin University of Yokohama, **Peccell Technologies

135

Th2-2
13:30 (3min+poster)Monolithic networked graphene nanoribbons fabricated by inorganic nanowire mask
Y. Aoki*, Y. Yamada*, A. Fukui*, T. Yoshimura*, A. Ashida*, N. Fujimura* and D. Kiriya*,***Osaka Prefecture University, **JST PRESTO

139

Th2-3
13:33 (3min+poster)
Fabrication of GaN nanowires by wet etching using electrodeless photo-assisted electrochemical etching and alkaline solution
treatment
M. Shimauchi, K. Miwa, M. Toguchi, T. Sato and J. Motohisa
Hokkaido University

141

Th2-4
13:36 (3min+poster)
Characterization of InP nanowire surrounding-gate transistor
Y. Katsumi, H. Gamo, T. Akamatsu, J. Motohisa and K. Tomioka
Hokkaido University

143

Th2-5
13:39 (3min+poster)
InAs/InP core-shell nanowire heterostructure for high-mobility surrounding-gate transistors
H. Gamo, T. Akamatsu, J. Motohisa and K. Tomioka
Hokkaido University

145

Th2-6
13:42 (3min+poster)
Characteristics of GaAs related multi-shell nanowires surrounded by native oxide AlGaOx layer
R. Tsutsumi, N. Tsuda and F. Ishikawa
Ehime University

147

Th2-7
13:45 (3min+poster)
A bimodal size distribution of GaAs quantum dots causing an anomalous temperature-dependent photoluminescence signal
Y. Ezoe, Y. Miyauchi, T. Ikari, T. Mano and A. Fukuyama
University of Miyazaki

149

Th2-8
13:48 (3min+poster)
Selective etching of GaAs core layer with embedded InAs quantum dot layer towards photonic crystal laser fabrication
T. Okunaga, Y. Xiong, M. Morifuji, H. Kajii and M. Kondow
Osaka University

151

Th2-9
13:51 (3min+poster)
Crystallinity evaluation of femtosecond-laser-induced periodic structures
R. Miyagawa and O. Eryu
Nagoya Institute of Technology

153

Th2-10
13:54 (3min+poster)
Shape control of periodic nanostructures on GaN by wet-etching
H. Matsuura, R. Miyagawa and O. Eryu
Nagoya Institute of Technology

155

Th2-11
13:57 (3min+poster)
LIPSS formation by laser irradiation with different pulse widths
S. Yoshikawa, R. Miyagawa and O. Eryu
Nagoya Institute of Technology

157

Th2-12
14:00 (3min+poster)
Influence of barrier layer height on the carrier transport properties of InGaAs/GaAsP superlattice solar cells
R. Iwanaga*, A. Watanabe*, T. Nakamura*, T. Ikari*, M. Sugiyama** and A. Fukuyama*,***University of Miyazaki, **The University of Tokyo159

Th2-13
14:03 (3min+poster)
Quasi-fermi level splitting analysis via absolute photoluminescence spectroscopy on InAs quantum dot solar cells
R. Tamaki*, Y. Shoji** and Y. Okada**
The University of Tokyo, **National Institute of Advanced Industrial Science and Technology

161

Th2-14
14:06 (3min+poster)Comparison of current density between wire on well and planar superlattice
M. Asami*, K. Watanabe**, Y. Nakano*, Y. Okada*, ** and M. Sugiyama*,***The University of Tokyo, **Research Center for Advanced Science and Technology

163

Th2-15
14:09 (3min+poster)Hot-carrier extraction from InAs/GaAs quantum dot superlattices embedded in GaAs solar cells
Y. Harada, N. Iwata, S. Asahi and T. Kita
Kobe University

165- P11 -

Th2-16
14:12 (3min+poster)
InGaP solar cells grown by hydride vapor phase epitaxy for application to low-cost high-efficiency photovoltaics*
Y. Shoji , R. Oshima*, K. Makita*, A. Ubukata** and T. Sugaya**
National Institute of Advanced Industrial Science and Technology, **Taiyo Nippon Sanso Corporation

167

Th2-17
14:15 (3min+poster)
Photoanode measurement of GaAs nanowires grown on silicon substrates
T. Ohno*, M. Yukimune*, R. Fujiwara*, Y. Wang**, Z. Mi** and F. Ishikawa**
Ehime University, **Michigan University169

Th2-18
14:18 (3min+poster)Single CIGS solar cells on p-type GaAs substrates
J. Nishinaga and T. Sugaya
National Institute of Advanced Industrial Science and Technology

171

Th2-1914:21 (3min+poster)Two-step preparation of high quality perovskite film on mesoporous PbI2 underlayer
S. Kanbe, J. Kagae and K. Yamashita
Kyoto Institute of Technology

173

Th2-20
14:24 (3min+poster)Dry/wet hybrid growth of FA1-xMAxPbI3-yBry perovskite films
J. Kagae, T. Yamanaka, S. Kanbe and K. Yamashita
Kyoto Institute of Technology

175

Th2-21
14:27 (3min+poster)
Reciprocal change in photocurrent and photoluminescence by intraband transition in two-step photon up-conversion solar cells
S. Asahi, N. Kinugawa and T. Kita
Kobe University

177

Th2-22
14:30 (3min+poster)
Response characteristics of AlGaN/GaInN/GaN HFET-type visible photosensors
R. Fujishima, M. Sakata, M. Iwaya, T. Takeuchi, S. kamiyama and O. Akasaki
Meijo University

179

Th2-23
14:33 (3min+poster)
Infrared photodetector sensitized by InAs quantum dots
T. Murata, S. Asahi and T. Kita
Kobe University

181
embedded at a GaAs/Al0.3Ga0.7As hetero-interface

Break (14:36-14:46)
Session Th3: Characterization & Quantum well & 2D materials (14:46-15:58)
Chair: M. Funato (Kyoto University)Th3-1 [Invited]
14:46 (30min+poster)
Theoretical approach to impurity incorporation mechanism in GaN MOVPE*, **Y. Kangawa , P. Kempisty***, * and K. Shiraishi***
Kyushu University, **Nagoya University, ***Polish Academy of Sciences

183

Th3-2
15:16 (3min+poster)
Improved crystallinity of III-V-N alloys by proton beam irradiation and thermal annealing
R. Futamura*, K. Yamane*, S. Genjo*, M. Imaizumi**, T. Ohshima*** and A. Wakahara**
Toyohashi University of Technology, **Japan Aerospace Exploration Agency, ***National Institutes for Quantum andRadiological Science and Technology

187

Th3-3
15:19 (3min+poster)
Nitrogen and gallium displacement related deep levels introduced by electron-beam irradiation in MOVPE-grownhomoepitaxial n-type GaN
M. Horita and J. Suda
Nagoya University

189

Th3-4
15:22 (3min+poster)Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN
K. Aoshima, K. Kanegae, M. Horita and J. Suda
Nagoya University

191

Th3-5
15:25 (3min+poster)
Evaluation of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN
M. Endo, K. Kanegae, M. Horita and J. Suda
Nagoya University

193- P12 -

Th3-6
15:28 (3min+poster)Development of accurate and quick measurement method for hole trap density in n-type GaN layers by optical isothermal
capacitance transient spectroscopy
K. Kanegae*,***, T. Narita**, K. Tomita**, T. Kachi***, M. Horita*,***, T. Kimoto* and J. Suda*,****
Kyoto University, **Toyota Central R&D Labs. Inc., ***Nagoya University

195

Th3-7
15:31 (3min+poster)
Rutherford backscattering spectrometry for Bi segregation in low-temperature-grown GaAs1-xBix
S. Fujino, Y. Horita, Y. Takagaki and Y. Tominaga
Hiroshima University

197

Th3-8
15:34 (3min+poster)
Structural analysis of Ga1-xInxN/GaN five-quantum wells grown on side-walls of GaN nano-wires by using an X-ray
nano-beam from synchrotron radiation
T. Kondo*, T. Ichikawa*, H. Akasaki*, K. Uno*, R. Kobayashi*, Y. Imai**, K. Sumitani**, S. Kimura**,N. Goto*, D. Imai*, S. Kamiyama* and T. Miyajima**
Meijo University, **Japan Synchrotron Radiation Research Institute

199

Th3-9
15:37 (3min+poster)
Measurements of internal quantum efficiency in various InGaN single quantum wells with different qualities bysimultaneous photoacoustic and photoluminescence spectroscopy
K. Mori*, Y. Takahashi*, A. A. Yamaguchi*, S. Kusanagi**, Y. Kanitani**, Y. Kudo** and S. Tomiya***
Kanazawa Institute of Technology, **SONY Corporation

201

Th3-10
15:40 (3min+poster)Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers*
T. Fujita , S. Sakai*, Y. Ikeda*, A. A. Yamaguchi*, S. Kusanagi**, Y. Kanitani**, Y. Kudo and S. Tomiya***
Kanazawa Institute of Technology, **Sony Corporation203

Th3-11
15:43 (3min+poster)
Semipermanent chemical gating of MoS2 by wrapping with ionic polymer
D. Kimura*, K. Matsuyama*, Y. Yamada*, Y. Aoki*, A. Fukui*, T. Yoshimura*, A. Ashida*, N. Fujimura* and D. Kiriya*,***Osaka Prefecture University, **JST PRESTO

205

Th3-12
15:46 (3min+poster)Anomalous charge transfer process of amide molecules to 2D layered material*
A. Fukui , Y. Hijikata**, J. Pirillo**, Y. Aoki*, Y. Yamada*, T. Yoshimura*, A. Ashida*, N. Fujimura* andD. Kiriya*,****
Osaka Prefecture University, **Hokkaido University, ***JST PRESTO

207

Th3-13
15:49 (3min+poster)
Strong molecular electron transfer system for transition metal dichalcogenides
K. Matsuyama*, A. Fukui*, Y. Yamada*, Y. Aoki*, D. Kimura*, T. Yoshimura*, A. Ashida*, N. Fujimura* and D. Kiriya*,***Osaka Prefecture University, **JST PRESTO

209

Th3-14
15:52 (3min+poster)
Large area strong photoluminescence in molecular-treated MoS2
Y. Yamada*, Y. Aoki*, A. Fukui*, T. Yoshimura*, A. Ashida*, N. Fujimura*, K. Shinokita**, K. Matsuda** and D. Kiriya*,****
Osaka Prefecture University, **Kyoto University, ***JST PRESTO,

211

Th3-15
15:55 (3min+poster)
X-ray in situ observation of graphene precipitating directly on sapphire substrate
S. Naritsuka, J. Yamada, Y. Ueda, A. Nakashima, T. Kashio and T. Maruyama
Meijo University

213

Break (15:58-16:08)
Poster Session III (Th2, Th3) (16:08-18:25)
Break (18:25-18:45)
Banquet (18:45-21:00)- P13 -

【October 11th, Friday】
Session Fr1: Optical devices (8:30-10:00)
Chair: M. Iwaya (Meijo University)
Fr1-1 [Invited]
8:30 (30min+poster)
Gallium nitride based vertical-cavity surface-emitting lasers having curved mirror
T. Hamaguchi, H. Nakajima, M. Tanaka, T. Jyoukawa, M. Ito, N. Kobayashi, M. Ohara, T. Matou, K. Hayashi, H. Watanabe,
Y. Hoshina, R. Koda and K. Yanashima
Sony Corporation

215

Fr1-2
9:00 (3min+poster)
Fabrication of nanofiber Bragg cavity with high-Q factor using a He ion microscope
H. Takashima*, A. Fukuda*, T. Tashima*, A. W. Schell** and S. Takeuchi**
Kyoto University, **Central European Institute of Technology

219

Fr1-3
9:03 (3min+poster)
Design and fabrication of InGaN single-mode laser with periodically slotted structure
D. Tazuke*, A. Higuchi*, T. Hikosaka**,T. Oka**, S. Nunoue**, M. Uemukai*, T .Tanikawa* andR. Katayama**
Osaka University,**Toshiba Corporation

221

Fr1-4
9:06 (3min+poster)
130°C stage-temperature operation of lateral-current-injection membrane lasers on SiC substrates
S. Yamaoka, R. Nakao, T. Fujii, K. Takeda, T. Hiraki, H. Nishi, T. Kakitsuka, T. Tsuchizawa and S. Matsuo
NTT Corporation

223

Fr1-5
9:09 (3min+poster)
Fabrication of photonic crystal laser structure with output high-mesa waveguideK. Hagura, T. Yamaguchi, Y. Xiong, M. Morifuji, H. Kajii and M. Kondow
Osaka University

225

Fr1-6
9:12 (3min+poster)
Selective dry etching of GaAs/AlOx with photonic crystal structure for wavelength division multiplexing
Y. Xiong, Y. Tani, X. Cong, M. Morifuji, M. Uemukai, H. Kajii, A. Maruta and M. Kondow
Osaka University

227

Fr1-7
9:15 (3min+poster)
Circular dichroism in a three-dimensional chiral photonic crystal fabricated by optical microscope micro-manipulator
E. Kimura*, S. Takahashi*, K. Yamashita*, J. Tatebayashi**, S. Iwamoto** and Y. Arakawa***
Kyoto Institute of Technology, **University of Tokyo

229

Fr1-8
9:18 (3min+poster)
Enhanced modal gain of InGaAs/GaAs quantum dot lasers with stacked high-density quantum dots
M. Kakuda, J. Kwoen, K. Watanabe and Y. Arakawa
The University of Tokyo

231

Fr1-9
9:21 (3min+poster)
Optimization of annealing temperature to reduce contact resistance on p-GaN toward fabrication of InGaN single-mode laser
A. Higuchi, D. Tazuke, T. Hikosaka, T. Oka, S. Nunoue, M. Uemukai, T. Tanikawa and R. Katayama
Osaka University, Toshiba Corporation

233

Fr1-10
9:24 (3min+poster)
Fabrication of GaN doubly-resonant waveguide microcavity SHG device
T. Nagata*, S. Umeda*, T. Hikosaka**, S. Nunoue**, T. Morikawa*, Y. Fujiwara*, M. Uemukai*, T. Tanikawa* and R. Katayama**
Osaka University, **Toshiba Corporation

235

Fr1-11
9:27 (3min+poster)
Design of GaN doubly-resonant waveguide microcavity SHG device
S. Umeda*, T. Nagata*, T. Hikosaka**, S. Nuoue**, T. Morikawa*, Y. Fujiwara*, M. Uemukai*, T. Tanikawa*, R. Katayama**
Osaka University, **Toshiba Corporation

237

Fr1-12
9:30 (3min+poster)
GaN waveguide directional coupler and wavelength filter for quantum optical application
M. Maeda*, T. Komatsu*, M. Kihira*, T. Hikosaka**, S. Nunoue**, M. Uemukai*, T. Tanikawa* andR. Katayama**
Osaka University, **Toshiba Corporation

239

Fr1-13
9:33 (3min+poster)
Input grating coupler for AlN channel waveguide wavelength conversion device
Y. Morioka*, M. Uemukai*, K. Uesugi**, K. Shojiki**, H. Miyake**, T. Morikawa*, Y. Fujiwara*,
T. Tanikawa* and R. Katayama**
Osaka University, **Mie University241- P14 -

Fr1-14
9:36 (3min+poster)
Design and evaluation of electrical and optical characteristics of ITO electrode for electric-field driven optical waveguide devices
A. Tomibayashi, M. Kihira, T. Komatsu, M. Uemukai, T. Tanikawa and R. Katayama
Osaka University243

Fr1-15
9:39 (3min+poster)Development status of low-cost UV-LED process including AlN templates
A. Mishima, Y. Tomita, A. Ubukata, T. Arimura, S. Koseki, K. Fuchigami and T. Arai
Taiyo Nippon Sanso Corporation

245

Fr1-16
9:42 (3min+poster)
Design of deep ultraviolet second harmonic generation device with double-layer polarity-inverted AlN waveguide*
A. Yamauchi , T. Komatsu*, K. Ikeda*, K. Uesugi**, K. Shojiki**, H. Miyake**, T. Hikosaka***,S. Nunoue***, T. Morikawa*, Y. Fujiwara*, M. Uemukai*, T. Tanikawa* and R. Katayama**
Osaka University, **Mie University, ***Toshiba Corporation

247

Fr1-17
9:45 (3min+poster)
Optical properties of AlGaN multiple quantum wells grown on n-AlGaN using sputter-deposited AlN templates
K. Kawabata, S. Kuboya, K. Shojiki, K. Uesugi and H. Miyake
Mie University249

Fr1-189:48 (3min+poster)
Raman scattering evaluation of strain evolution during surface-activated bonding of GaN and removal of Si substrate
R. Tanabe*, N. Yokoyama*, M. Uemukai*, T. Hikosaka**, S. Nunoue**, K. Shojiki***, H. Miyake***,M. Kushimoto****, H. J. Cheong****, Y. Honda****, H. Amano**** and R. Katayama**
Osaka University, **Toshiba corporation, ***Mie University, ****Nagoya University251

Fr1-199:51 (3min+poster)
Bonding strength optimization of polarity-inverted GaN/GaN structure fabricated by surface-activated bonding
N. Yokoyama, R. Tanabe, M. Uemukai, T. Tanikawa and R. Katayama
Osaka University253

Fr1-20
9:54 (3min+poster)
Remarkably wavelength-stable near-infrared emission of Tm-doped GaN light-emitting diodes
N. Yoshioka, S. Ichikawa, J. Tatebayashi and Y. Fujiwara
Osaka University

255

Fr1-21
9:57 (3min+poster)
Design and fabrication of a silicon nitride ring resonator for on-chip broadband entangled photon sources*
Z. Yin , K. Sugiura*, X. Cheng**, H. Takashima*, R. Okamoto*, S. Yokoyama** and S. Takeuchi**
Kyoto University, **Kyushu University

257

Break (10:00-10:10)
Session Fr2: Novel devices (10:10-11:01)
Chair: A. Wakejima (Nagoya Institute of Technology)
Fr2-1 [Invited]
10:10 (30min+poster)
Research and development of compound semiconductor electron devices for terahertz-wave wireless communications
I. Watanabe, Y. Yamashita and A. Kasamatsu
National Institute of Information and Communications Technology

259

Fr2-2
10:40 (3min+poster)
Needle-type neural electrical recording probe for monolithically integration with blue micro LEDs*
T. Takagi , H. Yasunaga*, D. Shinko*, Y . Nakayama*, M. Ohsawa** and H. Sekiguchi*,****
Toyohashi University of Technology, **Nagoya City University, ***Precursory Research for Embryonic Science and Technology

263

Fr2-3
10:43 (3min+poster)
Paper-based disposable molecular sensor constructed from oxide nanowires, cellulose nanofibers, and pencil-drawn electrodes
K. Nagashima*,** H. Koga**, G. Zhang*, T. Takahashi*, M. Nogi** and T. Yanagida**
Kyushu University, **Osaka University

265

Fr2-4
10:46 (3min+poster)
Neuromorphic system using an LSI chip and a-IGZO thin-film devices*,**
M. Kimura , K. Ikushima*, D. Yamakawa*, H. Yamane** and Y. Nakashima***
Ryukoku University, **Nara Institute of Science and Technology

267

Fr2-5
10:49 (3min+poster)MBE growth of AlGaAs superlattice for photocathodeI. Morita*, F. Ishikawa*, T. Nishitani** and M. Tabuchi***Ehime University, **Nagoya University

269

Fr2-6
10:52 (3min+poster)
Photoelectrochemical etching for GaN MEMS*
T. Yamada , Y.Ando*, H. Watanabe*, M. Deki*, A. Tanaka*,**, S. Nitta*, M. Kushimoto*, Y. Honda*, H. Amano*,***Nagoya University, **National Institute for Material Science271- P15 -

Fr2-7
10:55 (3min+poster)Electrical conduction mechanism of TaOx based resistive switching cells
T. Miyatani, Y. Nishi and T. Kimoto
Kyoto University

273

Fr2-8
10:58 (3min+poster)All-inorganic perovskite thick film formed by using mist deposition method and its X-ray detection properties
Y. Haruta, T. Ikenoue, M. Miyake and T. Hirato
Kyoto University

275

Poster Session IV (Fr1) (11:01-12:30)
Lunch (12:30-13:30)
Tutrial (13:30-14:20)
Chair: K. Watanabe (National Institute for Materials Science)
Turorial 13:30 (50min+poster)
NV center in diamond: Properties, fabrication, and applications to quantum devices
J. Isoya
University of Tsukuba

277

Special Session (14:20-16:00)“Forefront of wide bandgap semiconductor power devices”
Chair: J. Suda (Nagoya University)
SP-1 [Invited]
14:20 (30min+poster)
Recent progress of fabrication process of GaN vertical device
T. Kachi, T. Narita, H. Sakurai, S. Yamada and J. Suda
Nagoya University

281

Break (14:50-15:00)

SP-2 [Invited]
15:00 (30min+poster)Development of corundum-structured gallium oxide power devices by MIST EPITAXY®
T. Shinohe
FLOSFIA Inc.

285

SP-3 [Invited]
15:30 (30min+poster)Forefront of SiC power devices
Y. Yonezawa, R. Kosugi, K. Nakayama, S. Harada and H. Okumura
National Institute of Advanced Industrial Science and Technology

287

Closing Session (16:00-16:20)- P16 -