DATA SHEET
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Silicon Carbide (SiC)
MOSFET - EliteSiC,
32 mohm, 650 V, M3S,
D2PAK-7L
NVBG032N065M3S

V(BR)DSSRDS(ON) TYP

ID MAX

650 V

32 mW @ 18 V

52 A

Drain (TAB)

Features• Typical RDS(ON) = 32 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 55 nC)• High Speed Switching with Low Capacitance (Coss = 113 pF)• 100% Avalanche Tested• AEC−Q101 Qualified and PPAP Capable• This Device is Halide Free and RoHS Compliant with Exemption 7a,Gate (Pin 1)

Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)

N−CHANNEL MOSFETPb−Free 2LI (on Second Level Interconnection)

Applications• Automotive On Board Charger• Automotive DC−DC Converter for EV/HEVMAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

650

V

Gate−to−Source Voltage

VGS−8/+22ID

52

A

PD

200

W

Continuous Drain Current

TC = 25°C

Power Dissipation
Continuous Drain Current

TC = 100°C

Power Dissipation

ID

32A

PD

100W
A

Pulsed Drain Current (Note 1)

TC = 25°C,tP = 100 ms

IDM156Continuous Source−Drain
Current (Body Diode)

TC = 25°C,
VGS = −3 V

IS30

TC = 100°C,
VGS = −3 V
TC = 25°C,
VGS = −3 V,
tP = 100 ms

ISM

127

Single Pulse Avalanche
Energy (Note 2)

ILPK = 16.7 A,
L = 1 mH

EAS

139mJ

TJ, Tstg−55 to175°C

TL

270

Lead Temperature for Soldering Purposes(1/8” from Case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Repetitive rating, limited by max junction temperature.
2. EAS of 139 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 16.7 A,
VDD = 100 V, VGS = 18 V.

© Semiconductor Components Industries, LLC, 2023

September, 2024 − Rev. 1

MARKING DIAGRAM
BG032N
065M3SAYWWZZ

BG032N065M3S = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ= Lot Traceability

17Pulsed Source−Drain Current(Body Diode) (Note 1)

Operating Junction and Storage Temperature

D2PAK−7L
CASE 418BJ

1ORDERING INFORMATION
DevicePackage

Shipping†

NVBG032N065M3S

D2PAK−7L

800 / Tape& Reel

†For information on tape and reel specifications,
including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Publication Order Number:
NVBG032N065M3S/D

NVBG032N065M3S
THERMAL CHARACTERISTICS
Symbol

Value

Unit

Thermal Resistance, Junction−to−Case (Note 3)

Parameter

RqJC

0.75°C/W

Thermal Resistance, Junction−to−Ambient (Note 3)

RqJA

40

3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter

Symbol

Value

Unit

VGSop

−5...−3+18V

Operation Values of Gate−to−Source Voltage

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)Parameter

SymbolTest Conditions

MinTypMax

UnitDrain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA, TJ = 25°C

650−−V

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJ

ID = 1 mA, Referenced to 25°C

−90−mV/°C

IDSS

VDS = 650 V, TJ = 25°C−−10mAVDS = 650 V, TJ = 175°C (Note 5)−−500mA

IGSS

VGS = −8/+ 22 V, VDS = 0 V−−±1.0mA

RDS(ON)

VGS = 18 V, ID = 15 A, TJ = 25°C

−3244mW

VGS = 18 V, ID = 15 A, TJ = 175°C (Note 5)−49−

VGS = 15 V, ID = 15 A, TJ = 25°C−

41−

VGS = 15 V, ID = 15 A, TJ = 175°C (Note 5)−52−

VGS(TH)

VGS = VDS, ID = 7.5 mA, TJ = 25°C

2.0

2.9

4.0

VgFS

VDS = 10 V, ID = 15 A (Note 5)

−

9.9−

S

VDS = 400 V, VGS = 0 V, f = 1 MHz (Note 5)

pF

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current
ON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward Trans−conductance

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS−

1409−

Output Capacitance

COSS−

113−

Reverse Transfer Capacitance

CRSS−

9.0−

Total Gate Charge

QG(TOT)

−55−

−

15−

−

14−

VDD = 400 V, ID = 15 A, VGS = −3/18 V(Note 5)nC

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

Gate ResistanceRG

f = 1 MHz

−

5.0−

W

Turn−On Delay Timetd(ON)−

8.8−

nsTurn−Off Delay Timetd(OFF)

VGS = −3/18 V, ID = 15 A, VDD = 400 V,
RG = 4.7 W, TJ = 25°C (Note 4, 5)−31−SWITCHING CHARACTERISTICS

Rise Time

tr−

12−

Fall Timetf−

9−Turn−On Switching Loss

EON−

33−

Turn−Off Switching Loss

EOFF−

16−

Total Switching LossETOT−49−

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2mJ

NVBG032N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter

SymbolTest Conditions

Min

TypMaxUnit

Turn−On Delay Timetd(ON)

−

7.8−

ns

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, ID = 15 A, VDD = 400 V,
RG = 4.7 W, TJ = 175°C (Note 4, 5)−37−

SWITCHING CHARACTERISTICS

Rise Timetr−

12−

Fall Time

tf−

11−

Turn−On Switching Loss

EON−

31−

Turn−Off Switching Loss

EOFF−

25−

Total Switching Loss

ETOT−

56−

ISD = 15 A, VGS = −3 V, TJ = 25°C

−

4.5

6.0

ISD = 15 A, VGS = −3 V, TJ = 175°C(Note 5)−

4.2−

VGS = −3 V, IS = 15 A, dI/dt = 1000 A/ms,
VDS = 400 V, TJ = 25°C (Note 5)

−

15.5−

−

8.9−

6.6−

mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSDVns

Reverse Recovery TimetRR

Charge timetaDischarge timetb−

Reverse Recovery Charge

QRR−

72−

nC

Reverse Recovery Energy

EREC−

4.6−

mJ

Peak Reverse Recovery Current

IRRM−

9.3−

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. EON/EOFF result is with body diode.
5. Defined by design, not subject to production test.

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NVBG032N065M3S
TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics

Figure 2. Output Characteristics

Figure 3. Transfer Characteristics

Figure 4. On−Resistance vs. Gate Voltage

ID = 15 A
VGS = 18 V

Figure 5. On−Resistance vs. Drain Current

Figure 6. On−Resistance vs. Junction Temperature

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NVBG032N065M3S
TYPICAL CHARACTERISTICS
25VGS = 0 V
TJ = 25°C
f = 1 MHz

EOSS, Stored Energy (mJ)201510500100

200

300

400500600

700

VDS, Drain to Source Voltage (V)Figure 7. Capacitance Characteristics−12ID = 15 A

−10−8−6−4−2TJ = 25C (tp<20us)1512963400 V
560 V
650 V

0VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V

ID, Drain Current (A)VGS, Gate to Source Voltage (V)18Figure 8. Stored Energy vs. Drain−to−Source
Voltage0−20−40−60−80−100−120−140−160−180−3010203040
QG, Gate Charge (nC)5060
VDS, Drain to Source Voltage [V]Figure 9. Gate Charge Characteristics−10−8−6−4−20

TJ = 175C (tp<20us)

10000SINGLE PULSE
TJ = Max rated
RqJC Typ = 0.75 ° C/W
TC = 25 °C−20−40

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V−200

Figure 10. Reverse Conduction Characteristics

ID , DRAIN CURRENT (A)−120−60−80−100−120−140100

10pulse duration =DC
pulse duration =1ms
pullse duration =100us
pulse duration =10us
pulse duration =1us
Rdson
BV boundary
pulse boundary

1−1600.1−1800.1−200

Figure 11. Reverse Conduction Characteristics

110100VDS , DRAIN−TO−SOURCE VOLTAGE (V)Figure 12. Safe Operating Area

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51000

NVBG032N065M3S
TYPICAL CHARACTERISTICS100Rqjc = 0.75°C/W

IAV, Avalanche Current (A)

25°C
150°C

1010.001

0.010

0.100
1.000
tAV, Avalanche Time (ms)

10.000Figure 13. Avalanche Current vs. Pulse Time (UIS)6060

TC = 25°C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

4030
20
100
4.5

6

10.5
7.5
9ID, Drain Current (A)

12Eon
Eoff
Etot
3Eon
Eoff
Etot

40
2067.5
9ID, Drain Current (A)

10.5

500

13.5

60

4020Eon
Eoff
Etot

0400

12TC = 25°C
VGS = −3/18 V
ID = 15 A
VDS = 400 V80

60

4.5Figure 16. Inductive Switching Loss vs. Drain Current

100

TC = 25°C
VGS = −3/18 V
ID = 15 A
RG = 4.7 W

80

0300

2015

Switching Loss (mJ)

Switching Loss (mJ)

100

30013.5

Figure 15. Inductive Switching Loss vs. Drain Current

120

4010Eon
EoffEtot
3TC = 175°C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

50
Switching Loss (mJ)50
Switching Loss (mJ)

Figure 14. Maximum Power Dissipation vs.
Case Temperature600

1VDS, Drain to Source Voltage (V)23456789RG, Gate Resistance (W)Figure 17. Inductive Switching Loss vs. Drain Voltage

Figure 18. Inductive Switching Loss vs.
Gate Resistancewww.onsemi.com
610NVBG032N065M3S
TYPICAL CHARACTERISTICS
70Switching Loss (mJ)

Eon
EoffEtot

TC = 25°C
VGS = −3/18 V
VDD = 400 V
ID = 7.5 A

6050403020
10012345678910RG, Gate Resistance (W)Figure 19. Inductive Switching Lossvs. Gate Resistance

Figure 20. Thermal Response Characteristics

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7NVBG032N065M3S
PACKAGE DIMENSIONSD2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B

GENERICMARKING DIAGRAM*XXXXXXXXX
AYWWG

XXXX = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
G= Pb−Free Package*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

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DATE 16 AUG 2019

NVBG032N065M3S

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