Zener diodeUDZS5.1B
Dimensions (Unit : mm)
1.25±0.1

Land size figure (Unit : mm)
0.1±0.1
0.05

0.8MIN.

0.9MIN.

2.5±0.2

1.7±0.1

Features
1) Compact, 2-pin mini-mold type forhigh-density mounting. (UMD2)
2) High reliability.
3) Can be mounted automatically,using chip mounter.

2.1

Applications
Constant voltage control

UMD2

Construction
Silicon epitaxial planar

Structure

0.7±0.2
0.1

0.3±0.05

ROHM : UMD2JEDEC : S0D-323
JEITA : SC-90/Adot (year week factory)
EX. UDZS3.6B

 Taping specifications (Unit : mm)
0.3±0.1

φ1.55±0.05

8.0±0.22.75

4.0±0.1

1.40±0.1

2.8±0.1

2.0±0.05

3.5±0.05 1.75±0.1

4.0±0.1

φ1.05
1.0±0.1

Absolute maximum ratings (Ta=25C)

Parameter
Power dissipation
Junction temperature
Storage temperature
Operating temperature

SymbolP
Tj
Tstg
Topr

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○Limits
200150-55 to +150
-55 to +150

1/4

UnitmW℃℃℃

2012.02 - Rev.DUDZS5.1B

Data SheetElectrical characteristics (Ta=25C)
SymbolTYP.

Zener voltage ：Vz(V)Operating resistance ：Zz(Ω)

Rising operataing
resistance ：Zz(Ω)

Reverse current ：IR(uA)

MIN.
MAX.
Iz(mA)MAX.
Iz(mA)
MAX. Iz(mA)
MAX.
VR(V)
UDZS 3.6B 3.600
3.845
5.0
100
5.0
1000
10.0
1.0
1.0
UDZS 3.9B 3.890
4.160
5.0
100
5.0
1000
5.0
1.0
1.0
UDZS 4.3B 4.170
5.0
5.0
5.0
4.430
100
1000
1.0
1.0
UDZS 4.7B 4.550
5.0
5.0
2.0
4.750
1008000.5
1.0
UDZS 5.1B 4.980
5.0
5.0
2.0
5.200805000.51.5
UDZS 5.6B 5.490
5.05.01.05.730
60
200
0.52.5UDZS 6.2B 6.060
5.05.01.0
6.330
60
1000.53.0
UDZS 6.8B 6.650
5.0
5.0
0.5
6.930
4060
0.5
3.5
UDZS 7.5B 7.280
5.0
5.0
0.5
7.600
3060
0.5
4.0
UDZS 8.2B 8.020
5.0
5.0
0.5
8.360
3060
0.5
5.0
UDZS 9.1B 8.850
5.0
5.0
0.5
9.230
3060
0.5
6.0
UDZS 10B
5.0
5.00.1
9.770
10.2103060
0.5
7.0
UDZS 11B 10.760
5.05.00.1
11.2203060
0.5
8.0
5.00.1UDZS 12B 11.740
5.080
0.5
9.0
12.24030
UDZS 13B 12.910
5.05.00.1
13.4903780
0.510.0
UDZS 15B 14.340
5.0
5.00.114.980
4280
0.5
11.0
UDZS 16B 15.850
5.0
5.00.116.510
5080
0.5
12.0
UDZS 18B 17.560
5.05.00.1
18.350
6580
0.5
13.0
UDZS 20B 19.520
5.085
5.00.1
20.390100
0.5
15.0
UDZS 22B 21.540
5.01005.00.122.470100
0.517.0
UDZS 24B 23.720
5.01205.00.1
24.7801200.5
19.0
UDZS 27B 26.190
5.01505.00.127.5301500.5
21.0
UDZS 30B 29.190
5.02005.00.130.690200
0.5
23.0
UDZS 33B 32.150
5.0
250
5.00.133.790250
0.5
25.0
UDZS 36B 35.070
36.8705.0300
5.0
300
0.5
0.1
27.0
(１ )The zener voltage(Vz) is measured 40ms after power is supplied.
(２ )The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)Type No.
TYPE
UDZS 3.6BUDZS 3.9B
UDZS 4.3B
UDZS 4.7B
UDZS 5.1B
UDZS 5.6B
UDZS 6.2B
UDZS 6.8B
UDZS 7.5B
UDZS 8.2B
UDZS 9.1B
UDZS 10B
UDZS 11B

TYPE NO.

62728292
A2C2E2F2H2J2L20515

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○TYPE
UDZS 12B
UDZS 13B
UDZS 15B
UDZS 16B
UDZS 18B
UDZS 20B
UDZS 22B
UDZS 24B
UDZS 27B
UDZS 30B
UDZS 33B
UDZS 36B

2/4TYPE NO.

2535455565758595A5C5E5F52012.02 - Rev.DUDZS5.1B

Data SheetElectrical characteristic curves (Ta=25C)
10ZENER CURRENT:Iz(mA)

10.1

5.1

4.70.01

5.66.8

4.3
6.2

3.9

7.58.2 9.1
103.6

11 12 13 151618222024273033360.001
0510152025303540

ZENER VOLTAGE:Vz(V)Vz-Iz CHARACTERISTICS

10000

REVERSE SURGE MAXIMUM
POWER:PRSM(W)

POWER DISSIPATION:Pd(mW)

250150100500255075100125150t

100

1010.10.001

0AMBIENT TEMPERATURE:Ta(℃)
Pd-Ta CHARACTERISTICS

0.010.1110100

TIME:t(ms)
PRSM-TIME CHARACTERISTICS

0.12

400.1

350.0830

10000.06

250.04200.0215010-0.02-0.04

5-0.060-5-0.08
0102030ZENER VOLTAGE：Vz(V)γz-Vz CHARACTERISTICS

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○40TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)

Rth(j-a)TEMP.COEFFICIENCE:γz(mV/℃)

TEMP.COEFFICIENCE:γz(％/℃)

PRSM

1000200100

Rth(j-c)

10Mounted on epoxy board
IM=10mA

IF=100mA

11ms

time

300us

0.10.001

3/4

0.01

0.1
110100
TIME:t(s)Rth-t CHARACTERISTICS

1000

2012.02 - Rev.DUDZS5.1B

Data Sheet

10100

1000

0.1
Ta=125℃
Ta=75℃
Ta=25℃

0.01

Ta=-25℃

3.544.55ZENER VOLTAGE:Vz(V)Vz-Iz CHARACTERISTICS

Ta=75℃

101

Ta=25℃

0.1
Ta=-25℃

0.01

5.5

10.000100.5

1

REVERSE CURRENT:IR(nA)

ZENER VOLTAGE:Vz(Ｖ)

0.8

5.2

5.1

AVE:5.102V

0.7
0.6
0.5
0.4
0.3
0.2

AVE:0.117nA

1.5392

Ta=25℃
f=1MHz
VR=0V
n=10pcs

38373635343332
31

0.1

AVE:33.74pF3004.9140
Ta=25℃
VR=1.5V
n=30pcs

CAPACITANCEBETWEENTERMINALS:Ct(pF)

Ta=25℃
IZ=5mA
n=30pcs

0.5

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

10.9501.5

REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS

5.45.3100.001

0.001
3CAPACITANCE BETWEENTERMINALS:Ct(pF)

REVERSE CURRENT:IR (nA)

ZENER CURRENT:Iz(mA)

100
1f=1MHz

Ta=125℃

Vz DISPERSION MAP
IR DISPERSION MAP

Ct DISPERSION MAP

DYNAMIC IMPEDANCE:Zz(Ω)

100001000

1001010.11ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS

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○104/42012.02 - Rev.D

Notice

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R1120A