US5U2Transistors

4V Drive Nch+SBD MOSFET
US5U2zStructure
Silicon N-channel MOSFET /Schottky barrier diodezDimensions (Unit : mm)
TUMT5
2.0

zFeatures
1) Nch MOSFET and schottky barrier diodeare put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) 4V drive.
4) Built-in Low VF schottky barrier diode.

0.2Max.

1.3

Abbreviated symbol : U02

zApplications
SwitchingzPackaging specifications
PackageType

zInner circuit(5)

TapingCode

TR

Quantity (pcs)

3000

(4)

US5U2
∗2

∗1
(1)
(2)
∗1 ESD protection diode∗2 Body diode(3)(1)Gate(2)Source(3)Anode(4)Cathode(5)DrainzAbsolute maximum ratings (Ta=25°C)<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage

SymbolVDSS
VGSSID
IDP ∗1IS
ISP ∗1

Limits
30
20
±1.4
±5.6
0.6
5.6

Unit
V
V
A
A
A
A

Power dissipation

PD ∗2

0.7

W / ELEMENT

Channel temperature

Tch

150

°C

Drain current
Source current(Body diode)

Continuous
PulsedContinuous
Pulsed∗1 Pw≤10µs, Duty cycle≤1%∗2 Mounted on a ceramic board

20190527-Rev.C 1/4

US5U2
Transistors<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current

Symbol
VRM
VR
IF

Limits
30
20
0.5

Unit
V
V
A

IFSM ∗1
PD ∗2

2.0
0.5

Tj

150

A
W / ELEMENT°C

SymbolLimits

Unit

PD ∗1
Tstg

1.0
−55 to +150

W / TOTAL°C

Forward current surge peakPower dissipation
Junction temperature∗1 60Hz 1cycle∗2 Mounted on ceramic board<MOSFET and Di>
Parameter
Total power dissipation
Range of storage temperature∗1 Mounted on a ceramic board

zElectrical characteristics (Ta=25°C)<MOSFET>
Parameter

SymbolGate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSSZero gate voltage drain current
Gate threshold voltage
VGS (th)Static drain-source on-state
resistanceRDS (on)∗Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitanceTurn-on delay time
Rise timeTurn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

Yfs ∗
Ciss
Coss
Crss
td (on) ∗tr ∗td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗

Min.
−
30
−
1.0
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−

Typ.

Max.

−
−
−
−
170
250
270
−
70
15
12
6
6
13
8
1.4
0.6
0.3

10
−
1
2.5
240
350
380
−
−
−
−
−
−
−
−
2.0
−
−

Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC

VGS=20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 1.4A, VGS= 10V
ID= 1.4A, VGS= 4.5V
ID= 1.4A, VGS= 4V
VDS= 10V, ID= 1.4A
VDS= 10V
VGS=0V
f=1MHzVDD 15V
ID= 0.7A
VGS= 10V
RL= 21Ω
RG=10Ω
VDD 15V, VGS= 5V
ID= 1.4A
RL= 11Ω, RG= 10Ω

Conditions

Typ.
−

Max.
1.2

Unit
V

Conditions
IS= 0.6A, VGS=0V

Typ.
−

Max.
0.36

Unit
V

IF= 0.1A

−

−

0.47

V

IF 0.5A

−

−

100

µA

VR= 20V∗Pulsed<Body diode characteristics (source-drain)>Parameter
Symbol Min.
Forward voltage
VSD
−

<Di>
Parameter

SymbolForward voltage

VF

Reverse current

IR

Min.
−

Conditions

20190527-Rev.C 2/4

US5U2
Transistors
zElectrical characteristics curves

SWITCHING TIME : t (ns)

100
Ciss

10

Coss
Crss

Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsedtf

100
td(off)10td(on)

tr

0.1

1

10

DRAIN-SOURCE VOLTAGE : VDS (V)Fig.1 Typical Capacitancevs. Drain-Source Voltage

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (mΩ)

Ta=125°C
75°C
25°C
−25°C

0.1

0.01

0.001
0.5

1.0

1.5

2.0

2.5

3.0

3.5

800

4
3
2
1

25°C
−25°C

100

10

1

0

2

3

DRAIN CURRENT : ID (A)TOTAL GATE CHARGE : Qg (nC)

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

10

VGS=0V
PulsedTa=25°C
PulsedID=0.7A

600
500
400
300
200

1

Ta=125°C
75°C
25°C
−25°C

0.1

100
2

4

6

8

0.01
0.0

10

10000

VGS=4.5V
Pulsed
Ta=125°C
75°C

1000

25°C
−25°C

100

10
0.01

0.1

1

0.5

1.0

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)Fig.6 Source Current vs.
Source-Drain Voltage

Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

75°C

1

5

GATE-SOURCE VOLTAGE : VGS (V)VGS=10V
Pulsed0.1

6

10

ID=1.4A00

4.0

Ta=125°C

10
0.01

1

700

Fig.4 Typical Transfer Characteristics

1000

0.1

900

GATE-SOURCE VOLTAGE : VGS (V)

10000

7

1000

VDS=10V
Pulsed1

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

DRAIN CURRENT : ID (A)10

ID=1.4A
8 RG=10Ω
Pulsed

0

1
0.01

100

Ta=25°C

9 VDD=15V

SOURCE CURRENT : IS (A)

1
0.01

10

10000

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

CAPACITANCE : C (pF)

10

1000

Ta=25°C
f=1MHz
VGS=0VGATE-SOURCE VOLTAGE : VGS (V)1000

VGS=4V
Pulsed
Ta=125°C
75°C

1000

25°C
−25°C

100

10
0.01

0.1

1

DRAIN CURRENT : ID (A)DRAIN CURRENT : ID (A)DRAIN CURRENT : ID (A)Fig.7 Static Drain-Source
On-State Resistancevs. Drain Current ( Ι )Fig.8 Static Drain-Source
On-State Resistancevs. Drain Current ( ΙΙ )Fig.9 Static Drain-Source
On-State Resistancevs. Drain Current ( ΙΙΙ )1020190527-Rev.C 3/4

US5U2STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

Transistors
1000

Ta=25°C
Pulsed

VGS=4V
VGS=4.5V
VGS=10V

100
0.1

1

10

DRAIN CURRENT : ID (A)Fig.10 Static Drain-Source
On-State Resistancevs. Drain Current ( Ι )

Rev.B

4/4

Notice
Precaution on using ROHM Products
1.

Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
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5.

Please verify and confirm characteristics of the final or mounted products in using the Products.

6.

In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affectproduct performance and reliability.

7.

De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.

8.

Confirm that operation temperature is within the specified range described in the product specification.

9.

ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined inthis document.

Precaution for Mounting / Circuit board design
1.

When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect productperformance and reliability.

2.

In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
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please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E© 2015 ROHM Co., Ltd. All rights reserved.

Rev.004

Precautions Regarding Application Examples and External Circuits
1.

If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of thecharacteristics of the Products and external components, including transient characteristics, as well as static
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2.

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Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
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isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

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1.

Product performance and soldered connections may deteriorate if the Products are stored in the places where:[a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation[d] the Products are exposed to high Electrostatic

2.

Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time isexceeding the recommended storage time period.

3.

Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
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Datasheet
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Notice – WE

© 2015 ROHM Co., Ltd. All rights reserved.

Rev.001