EVAL BOARD USER’S MANUAL
www.onsemi.com

NCP1680 - Totem Pole CrM Controller Evaluation
Board User's Manual
EVBUM2822/D
Introduction

Table 1. KEY SPECIFICATIONSThe NCP1680 is a Critical Conduction Mode (CrM)
Power Factor Correction (PFC) controller IC designed todrive the bridgeless Totem Pole PFC (TPFC) topology. The
bridgeless totem pole PFC consists of two totem pole legs:
a fast switching leg driven at the PWM switching frequency
and a second leg that operates at the AC line frequency. This
topology eliminates the diode bridge present at the input ofa conventional PFC circuit, allowing significant
improvement in efficiency and power density.

Value

Unit

Input Voltage Range

Description

90−265

Vac

Line Frequency Range

47−63

Hz

Output Voltage

395

V

Output Power

300

W

Output Ripple<5%

PF @ Full Load

> 0.95

THD @ Full Load

< 10

%

Inductor Value

150

mH

Inductor Core Size/Geometry

The NCP1680 Evaluation Board (EVB) user guidedemonstrates a universal line, 300 W totem pole PFC built
using NCP1680. NCP1680 is intended for Industrial power
supplies, Telecom/5G/Networking power, USB PD,
Gaming consoles, UHD TV power supplies, and Lighting
applications. TPFC topology eliminates the need forheatsinks or forced air in the NCP1680 EVB while operating
at an ambient of 25°C.

February, 2022 − Rev. 0

Bulk Capacitor Value

200

mF

Maximum Frequency

130

kHz

NOTE: NCP1680 EVB is a high voltage demonstration
board. It can accept an input voltage of 90 Vac to265 Vac and the output voltage of the board is
395 Vdc nominally. This EVB is fordemonstration purposes only and should not be
used to power any loads other than an electronicload. Only trained professionals in using highvoltage equipment should handle the board andappropriate safety precautions should be
followed.

Figure 1. NCP1680 Evaluation Board© Semiconductor Components Industries, LLC, 2022

PQ32201

Publication Order Number:
EVBUM2822/D

EVBUM2822/D
TYPICAL APPLICATION SCHEMATIC

S2

SR2

400−Vac

Vac

+

−

+

−

VL

+

+

VO

VAC
+

−

RLOAD

_

+400 V

+

−

+

0V

VB

LI

HO

SR1

COM

HB

LO

VCC

NCP1680

VBST

FAULT LVSNS2

VCC

VO

PFCOK LVSNS1
FB

AUX

SKIP

VCC

GND

PWMH

ZCD

PWML

SRH

PGND

VCC
VCC

VDD

NCP51820

VDDL
LOSRC
LOSNK
PGND

S1

EN
HIN
LIN
SGND
DT

HI

SRL

VDDH
HOSRC
HOSNK
SW

R AUX

NCP51530

SRH

ZCD

SRL POLARITY

R ZCD

Figure 2. Typical Application Schematic of a CrM Totem Pole PFC Utilizing NCP1680

various signals and learn the intricacies of TPFC. The fastleg half bridge is implemented on a daughter card where thefast leg switches are driven using NCP51820, a high voltage
eGaN half−bridge driver; the slow leg switches are driven
using NCP51530, a high voltage Si FET half−bridge driver.
The NCP1680 employs a novel current limit scheme wherea simple resistor placed in the return path between bulk
ground and the IC ground, is utilized for current limiting.
The Zero Current Detection (ZCD) resistor is further
utilized for drive control of the synchronous switch in thefast leg.
Additionally, the NCP1680 requires only a single
auxiliary winding to sense switch node valleys (in positivehalf−line cycle) and switch node peaks (in negative half line
cycle). This novel scheme results in the main boost switch
being turned on with minimal voltage across the switch
improving efficiency and reducing EMI.

As shown in Figure 2, the slow leg switches (SR1 & SR2)
are high voltage silicon−based FETs, also known as superjunction (SJ) FETs, and the fast leg switches (S1 & S2) are
Enhancement−mode Gallium Nitride (eGaN) devices. Since
NCP1680 employs a CrM control architecture where theinductor current resets back to zero before the next
switching cycle, low reverse recovery charge (Qrr) SJ FETs
can also be utilized for the fast leg albeit with slightly
inferior performance, but better cost structure. As
a controller the NCP1680 is agnostic to the fast leg switch
technology. Wide−Bandgap (WBG) devices such as Silicon
Carbide (SiC) or eGaN are recommended for optimal
performance. SiC is a good choice for lower frequency
applications while eGaN is an excellent choice for both low
frequency and high frequency applications.
The NCP1680 evaluation board is designed such thatengineers interested in this novel topology can easily probe

www.onsemi.com
2

EVBUM2822/D
BOARD DESCRIPTION AND TEST SETUP

Figure 3. NCP1680 Evaluation Board along with a Daughter Card Featuring Fast Leg Switches• J11 – Inrush current limiter (ICL) bypass is populated by

The evaluation motherboard and daughter card are shownin Figure 3. The motherboard includes multiple I/O
connectors and test points to simplify instrumentation andwaveform capture during the evaluation process. A brief
description and pinout of the I/O connectors is shown in
Table 2, and a listing of the test points plus the respective
circuit node is shown in Table 3.
There are some key points worth mentioning regarding
the I/O connectors and test points:• The pins labeled GND and VOUT_RTN are NOT
electrically common. GND and VOUT_RTN are
physically separated by the ZCD resistor and the user
should take precaution to not short these two nodes
together. For example, the ground lead of an
Earth−connected oscilloscope probe should not be
simultaneously connected to both GND and
VOUT_RTN.
• The EVB requires an external VCC bias supply. It is
recommended to connect this bias supply at the J3
connector or across the TP8−TP10 test points. The
recommended operating range for VCC is 12–18 V witha current sourcing capability greater than 10 mA. Oncethe EVB has been enabled, VCC can fall as low as 9 V
before the NCP1680 UVLO circuit disables thecontroller. A VCC voltage greater than 20 V will trip the
EVB over−voltage protection (OVP) and latch off thecontroller.
• J6 – AC Input connector is pinned out for a 3−wire AC
input connection. However, the chassis GND connection
is not required and can be left open. The user should
determine the appropriate input connection based on theirapplication requirements.
• J10 – SKIP header should be open to allow normal
operation of the EVB. Placing a jumper across the J10
header will force the EVB into Skip/Standby mode
operation, described later.

default. If the user wishes to operate the NCP1680 EVB
with an ICL then J11 must be removed before populating
the ICL at REF DES RT2.
• J12 – Daughter card interface is not keyed. User shouldtake precaution that the daughter card is correctly oriented
into J12. Furthermore, user must take precaution that thedaughter card is never inserted or removed while VCC isapplied to the motherboard, doing so can damage EVB.
Table 2. I/O CONNECTOR DESCRIPTIONSREF DES

PinoutGND Peg

1. GNDJ2

DC Output
Voltage

1. VOUT_RTN
2. N/C
3. VOUT

J3

VCC

1. VCC
2. GNDJ4PFCOK Skip
Interface

1. CNTRL Signal
2. GNDJ6

AC Input
Voltage

1. AC Line
2. Chassis GND
3. AC Neutral

J10

SKIP Control
Header

1. CNTRL
2. GND

J11

Inrush Current
Limit Bypass

1. VOUT_NTC
2. VOUTJ12

Daughter Card
Interface

1−6:
7−12:
13−18:
19−28:
29−32:
33−34:
35−36:
37−38:

www.onsemi.com
3

Function

J1, J7, J8, J9

VOUT_NTCVBRIDGEPWRGND
N/C
GND
PWML/LIN
PWMH/HINVCCEVBUM2822/D
Table 3. TEST POINT DESCRIPTIONSREF DESNode

REF DES

Node

TP1

NCP1680 AUX Pin

TP13Slow Leg Bridge NodeTP2

GND @ NCP51530 Driver

TP14

VOUT

TP3

NCP1680 FB Pin

TP15

VOUT_RTN

TP4

NCP1680 PFCOK Pin

TP16

NCP1680 SRH

TP5NCP51530 VCC1

TP17

NCP1680 SRL

TP6

NCP1680 ZCD Pin

TP18

PWRGNDTP7

VOUT_SNSTP19

NCP1680 SKIP Pin

TP8

NCP1680 VCC Pin

TP20

NCP1680 LVSNS2 Pin

TP9

NCP1680 Polarity Pin

TP21

NCP1680 LVSNS1 Pin

TP10

GND @ J3 Connector

TP22

NCP1680 PWMH/HIN

TP11

Haversine @ L2 Inductor

TP23

NCP1680 PWML/LIN

TP12Fast Leg Bridge NodeTP24

NCP1680 Fault Pin

In order to replicate the data published in this design note,the following test set up is recommended:• For higher power measurements (> 10% load), always
arrange the connection so that the voltmeters at input andoutput are as close to NCP1680 evaluation board (UUT)
as possible to avoid power loss due to resistance of thewiring or any other instrumentation.
• For input power measurement, please read power
measurement directly from the power meter. Do not

multiply VAC and IAC measurements, this is the apparent
power of UUT. The power measurement provides the real
power consumed by the UUT.
• Do not use the electronic load reading for output voltage
measurement. A separate DMM placed directly acrossoutput (TP14−TP15) will produce a more accurate
reading than the eLoad and cancels some of the
instrumentation power loss in ammeter.

Power Meter

VAC

UUT

eLoad

A
V

V

A
Figure 4. Test Setup for NCP1680 EVB

www.onsemi.com
4

EVBUM2822/D
PERFORMANCE CHARACTERISTICS – DATA AND WAVEFORMS
Efficiency

Figure 5. Efficiency vs. Output PowerPower Factor

Figure 6. Power Factor vs. Output Powerwww.onsemi.com
5

EVBUM2822/D
Total Harmonic Distortion

Figure 7. THD vs. Output Power
Switching Frequency at the Peak of AC Line vs. Output Power

Figure 8. Switching Frequency vs. Output Powerwww.onsemi.com
6

EVBUM2822/D
Soft−Start

Ch. 1 (Yellow): Line Current
Ch. 2 (Blue): Polarity
Ch. 3 (Purple): PFCOK
Ch. 4 (Green): Bulk Voltage

Figure 9. Soft−Start
Load Transient

10% to 100% Load Step

100% to 10% Load Step

In the above waveforms, NCP1680’s dynamic response enhancer (DRE) limits the lower bulk voltage to 367 V while theoutput overvoltage protection (OVP) limits the upper bulk voltage to 418 V. Transient data was captured at 115 Vac.

Ch. 1 (Yellow): Line Current
Ch. 2 (Blue): PWML
Ch. 3 (Purple): PWMH
Ch. 4 (Green): Bulk Voltage
Figure 10. Load Transient

www.onsemi.com
7

EVBUM2822/D
Input Current Waveforms and Output Ripple at Various Line Voltages

Figure 11. Input Current Waveforms and Output Ripple at Various Line Voltages
Skip/Standby Mode Control

The J10 header which is a standard 2 position, 100 mil
pitch connector header, provides a path to GND for the SKIP
pin. The user can operate the EVB in Skip mode by placing
a mating jumper (such as TE Connectivity 382811−6) acrossthe header, grounding the SKIP pin. J10 is conveniently
located on the PCB away from any high voltage nodes sothat the jumper can be placed while the EVB is in live
operation. Nonetheless, the user should exercise caution
when placing this jumper to prevent injury to themselves ordamage to the EVB.

The NCP1680 features a Skip/Standby mode whichenables the application to achieve very good no−load andlight−load performance. The device must be externallycommanded to enter the Skip mode by pulsing the PFCOK
pin or grounding the SKIP pin, and in a typical application
this control signal would be provided by a downstream
DC−DC converter. For the NCP1680 motherboard,
additional circuitry shown in Figure 12 has been designed in
to allow the user to easily transition the EVB into the
Skip/Stanbdy mode without the use of a downstream
converter.

www.onsemi.com
8

EVBUM2822/D

Figure 12. NCP1680 EVB Skip Interfaces

The second skip interface on the EVB is at the J4
connector which can be used to connect in a function
generator to pulse the PFCOK pin. For the NCP1680 to enterskip mode the PFCOK pin must be pulsed below 400 mV fora duration greater than 50 ms as is shown in Figure 13. It is

recommended that the function generator output be a signal
with 0–5 V amplitude where the output remains at 5 V forat least 100 ms to meet the threshold requirements on the
PFCOK pin.

Figure 13. PFCOK Skip−Entry Signal (Ch1 = Bulk Voltage, Ch2 = PFCOK, Ch4 = SKIP)

requirements. The pulse frequency to maintain skip modemust be faster than the frequency at which the bulk voltage
cycles between nominal regulation and 94% of nominal
regulation. Hence it is technically possible to operate the
EVB in skip mode at any load level and often in applications,skip operation may be necessary up to 5–10% of the rated
load. Figure 14 shows skip mode operation with the EVB
loaded at 20 W. A lighter load, or no load will result in much
longer cycle frequency and better performance.

Once skip mode has been entered the NCP1680 controller
will regulate the bulk voltage with a form of hysteretic
control, meaning that the bulk voltage will cycle between its
nominal regulation voltage and ~94% of nominal
regulation. The frequency at which the bulk voltage cycles
will be dependent on the output load. To maintain the EVB
in skip/standby mode it is necessary to continue pulsing thePFCOK pin wherein every PFCOK pulse must meet thepreviously stated voltage and timing thresholdwww.onsemi.com
9

EVBUM2822/D

Figure 14. NCP1680 Skip Mode Operation (Ch1 = Bulk Voltage, Ch2 = PFCOK, Ch4 = SKIP)
Control Loop Measurement

design. The NCP1680 motherboard provides a 1 kW
injection resistor and test points (TP14, TP7) around theinjection resistor enabling the use of a network analyzer with
an isolated injection transformer to measure the loop
response of the EVB. Figure 15 shows the loop response of
the NCP1680 EVB with 300 W load, measured at 115 VAC
and 230 VAC. The loop bandwidth measures from ~ 8–11 Hz
with about 70° of phase margin and > 14 dB of gain margin.

The NCP1680 controller is embedded with an internal
compensator circuit which provides the necessary loop
bandwidth to ensure good power factor performance, andalso provides sufficient phase & gain margin at the loop
crossover frequency to ensure stable and robust operation of
the application. Verification of the control loop
characteristics is a good practice for any power supply

www.onsemi.com
10

EVBUM2822/D

Figure 15. EVB Bode Plots @ 300 W; 115 V on Top; 230 V on Bottom
Thermal Performancedevice temperatures where the fast and slow leg switches
measure below 60°C, a modest 35°C rise above room
temperature. The daughter card PCB is also designed ina manner that eliminates the need for an additional heatsink
to be mounted to the board. The PCB’s internal copper
planes function as heat sinking and the temperature rise of
the fast leg switches is well controlled by these copper
planes.

The NCP1680 EVB and daughter card where also
evaluated for thermal performance while operating at
90 VAC and 300 W. Thermal images of the fast leg GaN
HEMTs, the boost inductor, and the slow leg silicon FETs
are shown in Figure 16. These images were captured ina 25°C ambient environment with no external air flow. The
high efficiency performance of the TPFC is evident in the

Figure 16. Thermal Measurement of Fast Leg eGaN Switches, Boost Inductor, and Slow leg Si FETs
www.onsemi.com
11

EVBUM2822/D
MOTHERBOARD PCB ARTWORK

Figure 17. Motherboard PCB (Part 1/3)

www.onsemi.com
12

EVBUM2822/D
MOTHERBOARD PCB ARTWORK (Continued)

Figure 18. Motherboard PCB (Part 2/3)

www.onsemi.com
13

EVBUM2822/D
MOTHERBOARD PCB ARTWORK (Continued)

Figure 19. Motherboard PCB (Part 3/3)

www.onsemi.com
14

EVBUM2822/D
DAUGHTERBOARD PCB ARTWORK

Figure 20. Daughterboard PCB (Part 1/2)

www.onsemi.com
15

EVBUM2822/D
DAUGHTERBOARD PCB ARTWORK (Continued)

Figure 21. Daughterboard PCB (Part 2/2)

www.onsemi.com
16

EVBUM2822/D
TRANSFORMER DATA SHEET

Figure 22. Transformer Data Sheetwww.onsemi.com
17

EVBUM2822/D
SCHEMATIC
Motherboard Control Section

Figure 23. Motherboard Control Section
Motherboard Power Train

Figure 24. Motherboard Power Trainwww.onsemi.com
18

EVBUM2822/D
Daughter Card

Figure 25. Daughter Cardwww.onsemi.com
19

EVBUM2822/D
BILL OF MATERIALS
Table 4. BILL OF MATERIALS – MOTHERBOARD
Item

Qty

REF DES

Value

Description

Manufacturer

MPN

PCB
Footprint

Substitution
Allowed

1

1

C7

1 nF

CAP CER 1000 pF 50 V
C0G/NP0 0603

Kemet

C0603X102J5GAC7867

603

Yes

2

1

C10

22 pF

CAP CER, NPO 22 pF
50 V

Wurth

885012006053

603

Yes

3

1

C11

0.1 mFCAP CER 0.1 mF 50 V
10% X7R 0603

Murata

GCM188R71H104KA57D

603

Yes

4

1

C14

10 n

CAP CER 10 nF 50 V
X7R 0603

Yageo

CC0603KRX7R9BB103

603

Yes

5

1

C15

0.1 mFCAP CER 0.1 mF 50 V
10% X7R 0603

Murata

GCM188R71H104KA57D

603

Yes

6

1

C17

0.1 mFCAP CER 0.1 mF 50 V
10% X7R 1206

Kemet

C1206C104K5RACAUTO

1206

Yes

7

1

C19

10 mF

CAP CER 10 mF 25 V
10% X7R 1206

Samsung

CL31B106KAHNNNE

1206

Yes

8

1

C25

22 mF

CAP ALUM 22 mF 20%
50 V RADIAL

NichiconUVK1H220MDD1TD

Radial

Yes

9

1

C29

22 nF

CAP CER 22 nF 50 V
X7R 0603

Kemet

C0603C223K5RACTU

603

Yes

10

1

C30

1 mF

CAP CER 1 mF 25 V
10% X7R 0603

Samsung

CL10B105KA8NNNC

603

Yes

11

1

C31

22 mF

CAP CER 22 mF 25 V
10% X5R 1206

Samsung

CL31A226KAHNNNE

1206

Yes

12

2

C1−2

820 nF

Cap, X Type, 275 V, AC,
Polypropylene

Kemet

R46KI382040P0

MBox,
RadialNo

132

C12−13

1 nF

CAP CER 1 nF 630 V
X7R 1206

Yageo

CC1206KKX7RZBB102

1206

Yes

14

2

C16, C18

100 mFCAP ALUM 100 mF 20%
450 V Rad. 18 x 40 mm

United Chemi−Con

EKXG451ELL101MM40S

Round,
RadialYes

152

C20−21

0.1 mFCAP CER 0.1 mF 630 V
10% X7R 1210

Kemet

C1210C104KBRAC7800

1210

Yes

16

2

C22−23

2.2 nFCAP FILM 2200 pF 20%
1.25 kVDC RAD

Kemet

PHE850EA4220MA01R17

Radial,13 x 4 mm

No

17

1

C24

1 nF

CAP CER 1000 pF 50 V
C0G/NP0 0603

Kemet

C0603X102J5GAC7867

603

Yes

18

1

C26

2.2 nFCAP CER 2200 pF 50 V
X7R 0603

Kemet

C0603C222M5RACTU

603

Yes

19

2

C27−28DNP

CAP CER DNP
Placeholder 0603

NA

NA

603

No

20

3

C4, C8−9

220 pFCAP CER 220 pF
C0G/NPO 0603

Kemet

C0603C221J5GACTU

603

Yes

21

2

C5−6

2.2 nF

Cap, Disc, Y Type,
760 VAC

Kemet

C961U222MWWDBA7317

Box, Axial

No

22

1

D6

ES1J

Diode Ultrafast 600 V
SOD−123−FL

onsemiES1JFLSOD−123_
FL

No

23

2

D1−2

S3M

Diode GEN PURP 1 kV
3A

onsemi

S3M

SMC

No

24

3

D3−5

BAT54H

Diode Schottky 30 V
200 mA (DC) Surface
Mount SOD−323

onsemi

BAT54HT1G

SOD−323_
rev3

Yes

25

4

D7−10

MMSD4148

DIODE GEN PURP
100 V 200 mA SOD123

onsemi

MMSD4148T1G

SOD−123

Yes

26

1

F1

5A

Fuse, 8.4 x 4 mm,
5.08 mm spacing

Bel Fuse

RSTA 5 AMMO

Thru−Hole

Yes

27

1

J10

Connector, Header,
100Mil spacing

Amphennol

67997−224HLF

Thru−Hole

Yes

28

1

J11

Jumper, 1 mm dia.
10.16 mm, Gold

HarwinD3082−05

Thru−Hole

Yes

www.onsemi.com
20

EVBUM2822/D
Table 4. BILL OF MATERIALS – MOTHERBOARD (continued)
PCB
Footprint

Substitution
Allowed1761426−3

Thru−Hole,
26 posYes

Mill−Max3103−2−00−21−00−00−
08−0

SIP−1

Yes

Header, Vert. 3 pin,
5 mm Spacing

OST

ED100/3DS

Thru−HoleYes

10 Amp2 Position Wire to Board
Terminal Block
Horizontal with Board
0.138” (3.5 mm) LS

Phoenix Contact

1984617

TBD

Yes

L1

150 mH

Inductor, Differential,
150 mH, 5.4 A_42mW

Wurth

7447055

Thru−Hole

No

1

L2

150 mHPFC Inductor, AUX,
150 mH, 3 A,
Np:Naux = 10:1

Wurth

750319168

PQ3230

No

35

1

L3

35 mH

Common Mode Choke,
2x 35 mH, 2x 80 mW,
3.5 A

Wurth

7448040435

Thru−Hole

No

36

1

L4

7 mH

Common Mode Choke,
2x 7 mH, 2x 20 mW, 7 A

Wurth7448040707

Thru−Hole

No

37

2

M1−2

MOSFET N CH 650 V
44A TO−220F

onsemi

FCPF067N65S3

TO−220

No

38

5

MT1−5

HEX STANDOFF #6−32
NYLON 3/4”

Keystone

1903D

NA

Yes

39

5

MT1−5
Screw

MACHINE SCREWPAN PHILLIPS 6−32,
NYLON

B&F FastenerSupplyNY PMS 632 0025 PH

40

1

Q2

Transistor, PNP, 40 V,
200 mA

onsemi

MMBT3906

SOT−23Yes

41

2

Q1, Q3

Transistor, NPN, 40 V,
200 mA

onsemi

MMBT3904LT1G

SOT−23

Yes

42

1

R1

10 kW

RES 10 kW 1% 1/8 W
0603

StackpoleRNCP0603FTD10K0

603

Yes

43

1

R4

10 W

RES, SMD, 1/10 W

Yageo

RC0603FR−0710RL

603

Yes

44

1

R8

DNP

RES SMD 0603
PLACEDHOLDER

NA

NA

603

Yes

45

1

R18

DNP

NA

NA

NA

1206

Yes

46

1

R38

1 kW

RES SMD 1 kW 5%
1/2 W 1206

Vishay Dale

CRCW12061K00JNEAHP

1206

Yes

47

1

R41

47.5 kWRES SMD 47.5 kW 1%
1/10 W 0603

Stackpole

RMCF0603FT47K5

603

Yes

48

2

R10, R150W

RES SMD JUMPER
5% 1/4 W 1206

Panasonic

ERJ−8GEY0R00V

1206

Yes

49

6

R11−14,
R33, R35

3.3 MWRES SMD 3.3 MW 1%
1/4 W 1206

Vishay Dale

CRCW12063M30FKEA

1206

Yes

50

2

R16−17100 kWRES SMD 100 kW 1%
1/10 W 0603

Stackpole

RMCF0603FT100K

603

Yes

51

2

R19−2047 kW

RES SMD 47 kW 5%
1/8 W 0805

Vishay Dale

CRCW080547K0JNEA

805

Yes

52

2

R2−3

1.0 kWRES SMD 1.0 kW 1%
1/10 W 0603

Yageo

RC0603FR−071KL

603

Yes

53

2

R21−2249.9 W

RES, SMD, 1/10 W

Yageo

AC0603FR−0749R9L

603

Yes

54

2

R23−24

10 W

RES, SMD, 1/10 W

Vishay Dale

RC0603FR−0710RL

603

Yes

55

3

R25−272.49 MWRES SMD 2.49 MW 1%
1/4 W 1206

Stackpole

RMCF1206FT2M49

1206

Yes

56

3

R34, R36,
R42

100 kWRES SMD 100 kW 1%
1/10 W 0603

Stackpole

RMCF0603FT100K

603

Yes

57

2

R39−404.99 kWRES SMD 4.99 kW 1%
1/10 W 0603

Yageo

RC0603FR−074K99L

603

Yes

Item

Qty

REF DES

29

1

30

Value

Description

Manufacturer

MPN

J12

Conn, Edge, Dual,
Female, 26 Position

TE Connectivity

4

J1, J7−9

Testpin, Gold, 40mil

31

2

J2, J6

32

2

J3−4

33

1

34

www.onsemi.com
21

Yes

EVBUM2822/D
Table 4. BILL OF MATERIALS – MOTHERBOARD (continued)
Item

Qty

REF DES

Value

Description

Manufacturer

MPN

PCB
Footprint

Substitution
Allowed58

2

R5, R37

1.0 kWRES SMD 1.0 kW 1%
1/10 W 0603

Yageo

RC0603FR−071KL

603

Yes

59

2

R6−7

250 mW

RES, SMD, 2 W

VishayWSR2R2500FEA

WSR2_
4527

No

60

6

R9,
R28−32

10 kW

RES 10 kW 1% 1/8 W
0603

StackpoleRNCP0603FTD10K0

603

Yes

61

1

RT1

100 kW

NTC 100 kW 4250K 5%
0805

Murata

NCP21WF104J03RA

805

No

62

1

RT2

DNP

Thermistor, NTC, 10 W,
3.7A

TDK

B57237S0100M000

Thru−Hole

No

63

1

RT3

Vairistor, Disc, 470 V,
4.5 kA

Littlefuse

V300LA20AP

Thru−Hole

No

64

1

S1

Switch, Mom, 32 V,
50 mA, SMD

C&K

KMR221GLFS

SMD

Yes

65

20

TP1,
TP3−9,
TP11−14,TP16−17,TP19−24TEST POINT PC MINI
RED

Keystone

5000

Thru−Hole

Yes

66

4

TP2,
TP10,
TP15,
TP18

TEST POINT PC MINI
BLK

Keystone

5001

Thru−Hole

Yes

67

1

U1

NCP1680

Totem Pole PFC
Controller, SOIC16

onsemi

NCP1680AAD1R2G

SOIC−16

No

68

1

U2

NCP51530

High Frequency Gate
Driveronsemi

NCP51530ADR2GSOIC−8

No

69

1

Z1

4.7 V

Zener DiodeonsemiMMSZ5230BT1G

SOD−123

Yes

70

2

Z2−3

15 V

Zener DiodeonsemiMMSZ4702T1G

SOD−123

Yes

www.onsemi.com
22

EVBUM2822/D
Table 5. BILL OF MATERIALS – DAUGHTER CARD
Item

Qty

REF DES

Value

Description

Manufacturer

MPN

PCB
Footprint

Substitution
Allowed1

1

C1

3.3 mF

CAP, SMD, CERAMIC,
25 V, X5R

TDK

C1608X5R1E335K080AC

603

Yes

2

1

C2

100 nF

CAP, SMD, CERAMIC,
25 V, X7R

Yageo

CC0603KRX7R8BB104

603

Yes

3

1

C3

2.2 mF

CAP, SMD, CERAMIC,
25 V, X5R

Murata

GRM188R61E225MA12D

603

Yes

4

1

C6

10 pF

CAP, SMD, CERAMIC,
50 V, NPO

Murata

GRM1555C1H100JA01J

402

Yes

5

1

C10

0.1 mF

CAP, SMD, CERAMIC,
25 V, X7R

Murata

GRM155R71E104KE14D

402

Yes

6

2

C4, C50.1 mFCAP CER 0.1 mF 630 V
10% X7R 1210

Kemet

C1210C104KBRAC7800

1210

Yes

7

2

C7, C11

1 mF

CAP, SMD, CERAMIC,
25 V, X7R

Murata

GCM188R71E105KA64D

603

Yes

8

2

C8, C947 pF

CAP, SMD, CERAMIC,
0 V, NPO

Murata

GRM1555C1H470JA01D

402

Yes

9

1

D1

ES1J

DIODE FAST REC 1 A
600 V

onsemi

ES1J

SMA

No

10

1

J1

Conn, Edge, Etch, Mateto TE1761426−3.
Goldfinger

TE Connectivity

1761426−3_MATE

PCB

No

Keystone1352−1Thru−Hole

Yes

N/A

Thru−HoleYes

GaN Systems

GS66508B

SMD_7.1 x
8.5 mmNo

11

3

J2, J5, J6

DNP

Testpin, Gold, 40mil

123

J3, J4, J7

DNP

Tip and Barrel pads

13

2

Q1, Q2

GS66508B

GaNFET, 650 V,
E−mode, 30 A, 50 mW,
Kelvin Source

14

1

R1

100 W

RES, SMD, 1/16 W

Yageo

RC0402FR−07100RL

402

Yes

15

1

R2

2W

RES, SMD, 1/10 W

TE Connectivity

CPF0603F2R0C1

603

Yes

16

1

R6

60.4 kW

RES, SMD, 1/16 W

Yageo

RC0402FR−0760K4L

402

Yes

17

2

R3, R1049.9 W

RES, SMD, 49.9 R
1/10 W 0603

Vishay Dale

CRCW060349R9FKEAC

603

Yes

18

2

R4, R11

4.99 W

RES, SMD, 1/10 W

VishayCRCW06034R99FKEA

603

Yes

19

2

R5, R12

10 kW

RES, SMD, 1/10 W

Yageo

RC0603FR−0710KL

603

Yes

20

1

U1

High Speed Half Bridge
GaN Driver

onsemi

NCP51820

MLP
4 x 4−15

Nowww.onsemi.com
23

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A
listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
The evaluation board/kit (research and development board/kit) (hereinafter the “board”) is not a finished product and is not available for sale to consumers. The board is only intended
for research, development, demonstration and evaluation purposes and will only be used in laboratory/development areas by persons with an engineering/technical training and familiar
with the risks associated with handling electrical/mechanical components, systems and subsystems. This person assumes full responsibility/liability for proper and safe handling. Anyother use, resale or redistribution for any other purpose is strictly prohibited.
THE BOARD IS PROVIDED BY ONSEMI TO YOU “AS IS” AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES WHATSOEVER. WITHOUT LIMITING THE FOREGOING,ONSEMI (AND ITS LICENSORS/SUPPLIERS) HEREBY DISCLAIMS ANY AND ALL REPRESENTATIONS AND WARRANTIES IN RELATION TO THE BOARD, ANY
MODIFICATIONS, OR THIS AGREEMENT, WHETHER EXPRESS, IMPLIED, STATUTORY OR OTHERWISE, INCLUDING WITHOUT LIMITATION ANY AND ALL
REPRESENTATIONS AND WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, TITLE, NON−INFRINGEMENT, AND THOSE ARISING FROM A
COURSE OF DEALING, TRADE USAGE, TRADE CUSTOM OR TRADE PRACTICE.
onsemi reserves the right to make changes without further notice to any board.
You are responsible for determining whether the board will be suitable for your intended use or application or will achieve your intended results. Prior to using or distributing any systems
that have been evaluated, designed or tested using the board, you agree to test and validate your design to confirm the functionality for your application. Any technical, applications ordesign information or advice, quality characterization, reliability data or other services provided by onsemi shall not constitute any representation or warranty by onsemi, and no additional
obligations or liabilities shall arise from onsemi having provided such information or services.
onsemi products including the boards are not designed, intended, or authorized for use in life support systems, or any FDA Class 3 medical devices or medical devices with a similaror equivalent classification in a foreign jurisdiction, or any devices intended for implantation in the human body. You agree to indemnify, defend and hold harmless onsemi, its directors,
officers, employees, representatives, agents, subsidiaries, affiliates, distributors, and assigns, against any and all liabilities, losses, costs, damages, judgments, and expenses, arisingout of any claim, demand, investigation, lawsuit, regulatory action or cause of action arising out of or associated with any unauthorized use, even if such claim alleges that onsemi was
negligent regarding the design or manufacture of any products and/or the board.
This evaluation board/kit does not fall within the scope of the European Union directives regarding electromagnetic compatibility, restricted substances (RoHS), recycling (WEEE), FCC,
CE or UL, and may not meet the technical requirements of these or other related directives.
FCC WARNING – This evaluation board/kit is intended for use for engineering development, demonstration, or evaluation purposes only and is not considered by onsemi to be a finished
end product fit for general consumer use. It may generate, use, or radiate radio frequency energy and has not been tested for compliance with the limits of computing devices pursuant
to part 15 of FCC rules, which are designed to provide reasonable protection against radio frequency interference. Operation of this equipment may cause interference with radio
communications, in which case the user shall be responsible, at its expense, to take whatever measures may be required to correct this interference.
onsemi does not convey any license under its patent rights nor the rights of others.
LIMITATIONS OF LIABILITY: onsemi shall not be liable for any special, consequential, incidental, indirect or punitive damages, including, but not limited to the costs of requalification,
delay, loss of profits or goodwill, arising out of or in connection with the board, even if onsemi is advised of the possibility of such damages. In no event shall onsemi’s aggregate liability
from any obligation arising out of or in connection with the board, under any theory of liability, exceed the purchase price paid for the board, if any.
The board is provided to you subject to the license and other terms per onsemi’s standard terms and conditions of sale. For more information and documentation, please visit
www.onsemi.com.

ADDITIONAL INFORMATIONONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales

TECHNICAL PUBLICATIONS:Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com



www.onsemi.com
1